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ETT540N22P60HPSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB82531EE98AF5BECB9EB618BF&compId=ETD540N22P60_ETT540N22P60.pdf?ci_sign=7dde4d2a75d65a9ef62c31dbf4bd98fe87ec22df Category: Thyristor modules
Description: Module: thyristor; double series; 2.2kV; 542A; BG-PB60ECO-1; screw
Case: BG-PB60ECO-1
Max. off-state voltage: 2.2kV
Max. forward voltage: 1.73V
Load current: 542A
Semiconductor structure: double series
Gate current: 250mA
Max. forward impulse current: 16.3kA
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Type of semiconductor module: thyristor
Anzahl je Verpackung: 1 Stücke
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ETT580N16P60HPSA1 INFINEON TECHNOLOGIES Infineon-eTT580N16P60-DS-v03_06-EN.pdf?fileId=5546d46265487f7b01658027a49f34b0 ETT580N16P60HPSA1 Thyristor modules
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ETT630N16P60HPSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB82531EE98AF542F7242CF8BF&compId=ETD630N16P60_ETT630N16P60.pdf?ci_sign=ad83636680462f41f1cb1c901a1d23ec4567dd0f Category: Thyristor modules
Description: Module: thyristor; double series; 1.6kV; 635A; BG-PB60ECO-1; screw
Type of semiconductor module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.6kV
Load current: 635A
Case: BG-PB60ECO-1
Max. forward voltage: 1.37V
Max. forward impulse current: 19.8kA
Gate current: 250mA
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Anzahl je Verpackung: 1 Stücke
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EVAL-IMM101T-015TOBO1 (SP004177748)
+1
 		EVAL-IMM101T-015TOBO1 (SP004177748) INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB90B41EDBADF7A0174CD460C7&compId=EVALIMM101T015TOBO.PDF?ci_sign=1c41203658233780afea79eb8fca0913b805c658 Category: Development kits - others
Description: Dev.kit: evaluation; prototype board; Comp: IMM101T-015M; motors
Application: motors
Kit contents: prototype board
Interface: GPIO; I2C; PWM; UART
Type of development kit: evaluation
Kind of module: motor driver
Components: IMM101T-015M
Kind of connector: screw terminal x2
Anzahl je Verpackung: 1 Stücke
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Lieferzeit 7-14 Tag (e)
2+69.78 EUR
Mindestbestellmenge: 2
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EVAL-IMM101T-046TOBO1 (SP004177752)
+2
 		EVAL-IMM101T-046TOBO1 (SP004177752) INFINEON TECHNOLOGIES EVALIMM101T015TOBO.PDF Category: Development kits - others
Description: Dev.kit: evaluation; prototype board; Comp: IMM101T-046M; motors
Type of development kit: evaluation
Kind of module: motor driver
Components: IMM101T-046M
Kind of connector: screw terminal x2
Kit contents: prototype board
Interface: GPIO; I2C; PWM; UART
Application: motors
Anzahl je Verpackung: 1 Stücke
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F3L300R07PE4 INFINEON TECHNOLOGIES F3L300R07PE4 IGBT modules
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F4150R12KS4BOSA1 INFINEON TECHNOLOGIES F4150R12KS4BOSA1.pdf Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge x2; 960W
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 150A
Pulsed collector current: 300A
Power dissipation: 960W
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: IGBT
Technology: EconoPACK™ 3
Topology: IGBT half-bridge x2; NTC thermistor
Case: AG-ECONO3-4
Max. off-state voltage: 1.2kV
Anzahl je Verpackung: 1 Stücke
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F475R06W1E3BOMA1 INFINEON TECHNOLOGIES Infineon-F4_75R06W1E3-DS-v03_00-en_de.pdf?fileId=db3a304313b8b5a60113baa00d5d00b8 Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge x2; Ic: 75A
Power dissipation: 275W
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Technology: EasyPACK™ 1B
Topology: IGBT half-bridge x2; NTC thermistor
Type of semiconductor module: IGBT
Case: AG-EASY1B-1
Max. off-state voltage: 0.6kV
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 75A
Pulsed collector current: 150A
Anzahl je Verpackung: 1 Stücke
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F475R12KS4BOSA1 INFINEON TECHNOLOGIES F4-75R12KS4.pdf Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge x2; Ic: 75A
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 75A
Pulsed collector current: 150A
Power dissipation: 500W
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: IGBT
Technology: EconoPACK™ 2
Topology: IGBT half-bridge x2; NTC thermistor
Case: AG-ECONO2-6
Max. off-state voltage: 1.2kV
Anzahl je Verpackung: 10 Stücke
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FB30R06W1E3BOMA1 FB30R06W1E3BOMA1 INFINEON TECHNOLOGIES FB30R06W1E3.pdf Category: IGBT modules
Description: Module: IGBT; diode/transistor; single-phase diode bridge; 115W
Max. off-state voltage: 0.6kV
Semiconductor structure: diode/transistor
Gate-emitter voltage: ±20V
Collector current: 30A
Pulsed collector current: 60A
Power dissipation: 115W
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: IGBT
Technology: EasyPIM™ 1B
Topology: IGBT three-phase bridge; NTC thermistor; single-phase diode bridge
Case: AG-EASY1B-1
Anzahl je Verpackung: 1 Stücke
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FD1000R33HE3KBPSA1 INFINEON TECHNOLOGIES Infineon-FD1000R33HE3_K-DS-v03_01-en_de.pdf?fileId=db3a30431ce5fb52011d76007b9a7266 FD1000R33HE3KBPSA1 IGBT modules
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FD300R06KE3HOSA1 INFINEON TECHNOLOGIES Infineon-FD300R06KE3-DS-v02_02-en_de.pdf?fileId=db3a30431689f4420116d2b4ead50bd7 FD300R06KE3 IGBT modules
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FD300R12KE3HOSA1 FD300R12KE3HOSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE89CDFE1588717B3D7&compId=FD300R12KE3.pdf?ci_sign=4f9165ddb8c39d579e888c281879100e2a537fa6 Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.2kV; screw
Type of semiconductor module: IGBT
Semiconductor structure: diode/transistor
Max. off-state voltage: 1.2kV
Case: AG-62MM-1
Electrical mounting: screw
Mechanical mounting: screw
Application: Inverter
Power dissipation: 1.47kW
Topology: boost chopper
Gate-emitter voltage: ±20V
Collector current: 300A
Pulsed collector current: 600A
Anzahl je Verpackung: 1 Stücke
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FF100R12RT4HOSA1 INFINEON TECHNOLOGIES Infineon-FF100R12RT4-DS-v02_01-en_de.pdf?fileId=db3a304327b8975001280601349b615b FF100R12RT4HOSA1 IGBT modules
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FF200R12KE3HOSA1 FF200R12KE3HOSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE78FD6BFDD0F906745&compId=FF200R12KE3.pdf?ci_sign=f153117c762ff8f8b62ebc993737473163b2a468 Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 200A
Max. off-state voltage: 1.2kV
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 200A
Pulsed collector current: 400A
Power dissipation: 1.05kW
Electrical mounting: screw
Mechanical mounting: screw
Topology: IGBT half-bridge
Type of semiconductor module: IGBT
Case: AG-62MM-1
Anzahl je Verpackung: 1 Stücke
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Lieferzeit 7-14 Tag (e)
1+158.02 EUR
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FF200R12KE4PHOSA1 FF200R12KE4PHOSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE89D8A348FD319B3D7&compId=FF200R12KE4P.pdf?ci_sign=c3b8d527485471d02faae9add4b3248119e8cbfe Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 200A
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Max. off-state voltage: 1.2kV
Case: AG-62MM-1
Electrical mounting: screw
Mechanical mounting: screw
Topology: IGBT half-bridge
Gate-emitter voltage: ±20V
Collector current: 200A
Pulsed collector current: 400A
Anzahl je Verpackung: 1 Stücke
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FF200R12KT3EHOSA1 FF200R12KT3EHOSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE89D8A398A572F53D7&compId=FF200R12KT3E.pdf?ci_sign=7d379c22644bc6b2701cdde2fb53b0018b9a5173 Category: IGBT modules
Description: Module: IGBT; transistor/transistor,common emitter; IGBT x2
Type of semiconductor module: IGBT
Semiconductor structure: common emitter; transistor/transistor
Max. off-state voltage: 1.2kV
Case: AG-62MM-1
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Power dissipation: 1.05kW
Topology: IGBT x2
Gate-emitter voltage: ±20V
Collector current: 200A
Pulsed collector current: 400A
Anzahl je Verpackung: 1 Stücke
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FF200R12KT4HOSA1 FF200R12KT4HOSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED6BFFD7E380C25A259&compId=FF200R12KT4.pdf?ci_sign=5e50d6ff781eb9cb0c9d8f539521efc04dd4d0ba Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 200A
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Max. off-state voltage: 1.2kV
Case: AG-62MM-1
Electrical mounting: screw
Mechanical mounting: screw
Power dissipation: 1.1kW
Topology: IGBT half-bridge
Gate-emitter voltage: ±20V
Collector current: 200A
Pulsed collector current: 400A
Anzahl je Verpackung: 1 Stücke
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FF200R17KE4HOSA1 FF200R17KE4HOSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE89D8A60961A4E73D7&compId=FF200R17KE4.pdf?ci_sign=57d7f67c089c0a8f2ad55fa545e7f1876fe92b70 Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 200A
Max. off-state voltage: 1.7kV
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 200A
Pulsed collector current: 400A
Power dissipation: 1.25kW
Electrical mounting: screw
Mechanical mounting: screw
Topology: IGBT half-bridge
Type of semiconductor module: IGBT
Case: AG-62MM-1
Anzahl je Verpackung: 1 Stücke
auf Bestellung 3 Stücke:
Lieferzeit 7-14 Tag (e)
1+239.81 EUR
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FF300R06KE3 INFINEON TECHNOLOGIES FF300R06KE3 IGBT modules
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FF300R12KE3 INFINEON TECHNOLOGIES description FF300R12KE3 IGBT modules
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FF300R12KS4 FF300R12KS4 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED5AA9345B52A7BD1CC&compId=FF300R12KS4-dte.pdf?ci_sign=915a25c84faf5048f01515fc4bae1ba7d52cac62 Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 300A
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT half-bridge
Max. off-state voltage: 1.2kV
Collector current: 300A
Case: AG-62MM-1
Electrical mounting: screw
Gate-emitter voltage: ±20V
Pulsed collector current: 600A
Power dissipation: 1.95kW
Mechanical mounting: screw
Anzahl je Verpackung: 1 Stücke
auf Bestellung 6 Stücke:
Lieferzeit 7-14 Tag (e)
1+262.12 EUR
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FF300R12KT3EHOSA1 FF300R12KT3EHOSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE89D8A6B34C2C213D7&compId=FF300R12KT3E.pdf?ci_sign=fd144bb2674acaa882bf1dd9f81d465f7011f7f3 Category: IGBT modules
Description: Module: IGBT; transistor/transistor,common emitter; IGBT x2
Type of semiconductor module: IGBT
Semiconductor structure: common emitter; transistor/transistor
Max. off-state voltage: 1.2kV
Case: AG-62MM-1
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Power dissipation: 1.45kW
Topology: IGBT x2
Gate-emitter voltage: ±20V
Collector current: 300A
Pulsed collector current: 600A
Anzahl je Verpackung: 1 Stücke
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FF300R12KT4HOSA1 FF300R12KT4HOSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED6BFFD80D064564259&compId=FF300R12KT4.pdf?ci_sign=3b3b4ec7904ace87e4bb423a0f8f1a4cd884a9ab Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 300A
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Max. off-state voltage: 1.2kV
Case: AG-62MM-1
Electrical mounting: screw
Mechanical mounting: screw
Power dissipation: 1.6kW
Topology: IGBT half-bridge
Gate-emitter voltage: ±20V
Collector current: 300A
Pulsed collector current: 600A
Anzahl je Verpackung: 1 Stücke
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FF300R17ME4BOSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE89D8A8BDE17AC13D7&compId=FF300R17ME4.pdf?ci_sign=3165dc23580ded91f906ca73de1a5b015a0a9dcf Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 300A
Gate-emitter voltage: ±20V
Collector current: 300A
Pulsed collector current: 600A
Power dissipation: 1.8kW
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Technology: EconoDUAL™ 3
Topology: IGBT half-bridge; NTC thermistor
Type of semiconductor module: IGBT
Case: AG-ECONOD-3
Max. off-state voltage: 1.7kV
Semiconductor structure: transistor/transistor
Anzahl je Verpackung: 1 Stücke
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FF450R06ME3 FF450R06ME3 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE584E51EA023EE8469&compId=FF450R06ME3.pdf?ci_sign=9139935a6e53df2f719cfd81b2f1553e8798a0a8 Category: IGBT modules
Description: Transistor/transistor; IGBT half-bridge,NTC thermistor; 1.25kW
Max. off-state voltage: 0.6kV
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 450A
Pulsed collector current: 900A
Power dissipation: 1.25kW
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Technology: EconoDUAL™ 3
Topology: IGBT half-bridge; NTC thermistor
Type of semiconductor module: IGBT
Case: AG-ECONOD-3
Anzahl je Verpackung: 1 Stücke
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FF450R12KE4HOSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED6ABF791B428A7DE27&compId=FF450R12KE4-DTE.pdf?ci_sign=ea990a008d4cd0a41ce5a30a9a09bff4050731f0 Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 450A
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Max. off-state voltage: 1.2kV
Case: AG-62MM
Electrical mounting: screw
Mechanical mounting: screw
Power dissipation: 2.4kW
Topology: IGBT half-bridge
Gate-emitter voltage: ±20V
Collector current: 450A
Pulsed collector current: 900A
Anzahl je Verpackung: 1 Stücke
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FF450R12KT4HOSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5869893D7BCFB4469&compId=FF450R12KT4.pdf?ci_sign=ae61a33310ba1063c05140bf85a5eae3ea9365d5 Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 450A
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Max. off-state voltage: 1.2kV
Case: AG-62MM
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Power dissipation: 2.4kW
Topology: IGBT half-bridge
Gate-emitter voltage: ±20V
Collector current: 450A
Pulsed collector current: 900A
Anzahl je Verpackung: 1 Stücke
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FF450R33T3E3B5BPSA1 INFINEON TECHNOLOGIES Infineon-FF450R33T3E3_B5-DS-v03_00-EN.pdf?fileId=5546d46267c74c9a01683cd2886064d9 Category: IGBT modules
Description: Transistor/transistor; IGBT half-bridge; Urmax: 3.3kV; Ic: 450A
Max. off-state voltage: 3.3kV
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 450A
Pulsed collector current: 900A
Electrical mounting: screw
Mechanical mounting: screw
Technology: XHP™3
Topology: IGBT half-bridge
Type of semiconductor module: IGBT
Case: AG-XHP100-6
Anzahl je Verpackung: 1 Stücke
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FF45MR12W1M1B11BOMA1 FF45MR12W1M1B11BOMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB82531EE98AF602B81B1258BF&compId=FF45MR12W1M1B11.pdf?ci_sign=f5b3f9ed9a3dcffcc3c66b2489eb90dc08bf9b53 Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 1.2kV; 25A; AG-EASY1BM-2; Idm: 50A
Type of semiconductor module: MOSFET transistor
Semiconductor structure: transistor/transistor
Drain-source voltage: 1.2kV
Drain current: 25A
Case: AG-EASY1BM-2
Electrical mounting: Press-Fit
Polarisation: unipolar
On-state resistance: 45mΩ
Pulsed drain current: 50A
Technology: CoolSiC™; SiC
Gate-source voltage: -10...20V
Mechanical mounting: screw
Topology: MOSFET half-bridge; NTC thermistor
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1 Stücke:
Lieferzeit 7-14 Tag (e)
1+71.50 EUR
10+66.47 EUR
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FF500R17KE4BOSA1 INFINEON TECHNOLOGIES FF500R17KE4.pdf Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 500A
Type of module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT half-bridge
Max. off-state voltage: 1.7kV
Collector current: 500A
Case: AG-62MM-1
Electrical mounting: screw
Gate-emitter voltage: ±20V
Pulsed collector current: 1kA
Mechanical mounting: screw
Anzahl je Verpackung: 1 Stücke
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FF900R12IE4 INFINEON TECHNOLOGIES FF900R12IE4 IGBT modules
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FF900R12ME7B11BOSA1 INFINEON TECHNOLOGIES Infineon-FF900R12ME7_B11-DataSheet-v03_00-EN.pdf?fileId=5546d4626e651a41016e8264085914c8 Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 900A
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 900A
Pulsed collector current: 1.8kA
Electrical mounting: Press-Fit; screw
Mechanical mounting: screw
Type of module: IGBT
Technology: TRENCHSTOP™
Topology: IGBT half-bridge; NTC thermistor
Case: AG-ECONOD-5
Max. off-state voltage: 1.2kV
Anzahl je Verpackung: 6 Stücke
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FM24C64B-GTR INFINEON TECHNOLOGIES Infineon-FM24C64B_64-Kbit_(8_K_8)_Serial_(I2C)_F-RAM-DataSheet-v10_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebdee5b30f8 Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 64kbFRAM; I2C; 8kx8bit; 4.5÷5.5VDC; 1MHz; SOIC8
Type of integrated circuit: FRAM memory
Kind of memory: FRAM
Memory: 64kb FRAM
Interface: I2C
Memory organisation: 8kx8bit
Clock frequency: 1MHz
Mounting: SMD
Case: SOIC8
Operating temperature: -40...85°C
Kind of package: reel; tape
Supply voltage: 4.5...5.5V DC
Anzahl je Verpackung: 2500 Stücke
Produkt ist nicht verfügbar
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FM24CL16B-DG INFINEON TECHNOLOGIES Infineon-FM24CL16B_16-Kbit_(2_K_8)_Serial_(I2C)_F-RAM-DataSheet-v13_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec99cb241e9 Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 16kbFRAM; I2C; 2kx8bit; 2.7÷3.65VDC; 1MHz; DFN8
Type of integrated circuit: FRAM memory
Kind of memory: FRAM
Memory: 16kb FRAM
Interface: I2C
Memory organisation: 2kx8bit
Supply voltage: 2.7...3.65V DC
Clock frequency: 1MHz
Case: DFN8
Mounting: SMD
Operating temperature: -40...85°C
Anzahl je Verpackung: 1620 Stücke
Produkt ist nicht verfügbar
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FM24CL16B-DGTR INFINEON TECHNOLOGIES Infineon-FM24CL16B_16-Kbit_(2_K_8)_Serial_(I2C)_F-RAM-DataSheet-v13_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec99cb241e9 Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 16kbFRAM; I2C; 2kx8bit; 2.7÷3.65VDC; 1MHz; DFN8
Type of integrated circuit: FRAM memory
Kind of memory: FRAM
Memory: 16kb FRAM
Interface: I2C
Memory organisation: 2kx8bit
Supply voltage: 2.7...3.65V DC
Clock frequency: 1MHz
Case: DFN8
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
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FM24CL64B-DGTR INFINEON TECHNOLOGIES Infineon-FM24CL64B_64-Kbit_(8_K_8)_Serial_(I2C)_F-RAM-DataSheet-v12_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebdf13330fe&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 64kbFRAM; I2C; 8kx8bit; 2.7÷3.6VDC; 1MHz; DFN8
Mounting: SMD
Operating temperature: -40...85°C
Memory organisation: 8kx8bit
Clock frequency: 1MHz
Kind of package: reel; tape
Memory: 64kb FRAM
Case: DFN8
Supply voltage: 2.7...3.6V DC
Type of integrated circuit: FRAM memory
Interface: I2C
Kind of memory: FRAM
Anzahl je Verpackung: 3000 Stücke
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FM25CL64B-DGTR INFINEON TECHNOLOGIES Infineon-FM25CL64B_64-Kbit_(8_K_8)_Serial_(SPI)_F-RAM-DataSheet-v11_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebdfcd83119&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 64kbFRAM; SPI; 8kx8bit; 2.7÷3.65VDC; 20MHz; DFN8
Mounting: SMD
Operating temperature: -40...85°C
Memory organisation: 8kx8bit
Clock frequency: 20MHz
Kind of package: reel; tape
Memory: 64kb FRAM
Case: DFN8
Supply voltage: 2.7...3.65V DC
Type of integrated circuit: FRAM memory
Interface: SPI
Kind of memory: FRAM
Anzahl je Verpackung: 3000 Stücke
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FM25L04B-DGTR INFINEON TECHNOLOGIES Infineon-FM25L04B_4-Kbit_(512_8)_Serial_(SPI)_F-RAM-DataSheet-v12_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec90ed44178&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 4kbFRAM; SPI; 512x8bit; 2.7÷3.6VDC; 20MHz; DFN8
Mounting: SMD
Operating temperature: -40...85°C
Memory organisation: 512x8bit
Clock frequency: 20MHz
Kind of package: reel; tape
Memory: 4kb FRAM
Case: DFN8
Supply voltage: 2.7...3.6V DC
Type of integrated circuit: FRAM memory
Interface: SPI
Kind of memory: FRAM
Anzahl je Verpackung: 3000 Stücke
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FM25L16B-DG INFINEON TECHNOLOGIES Infineon-FM25L16B_16-Kbit_(2_K_8)_Serial_(SPI)_F-RAM-DataSheet-v11_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec917394180&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 16kbFRAM; SPI; 2kx8bit; 2.7÷3.6VDC; 20MHz; DFN8
Mounting: SMD
Operating temperature: -40...85°C
Memory organisation: 2kx8bit
Clock frequency: 20MHz
Memory: 16kb FRAM
Case: DFN8
Supply voltage: 2.7...3.6V DC
Type of integrated circuit: FRAM memory
Interface: SPI
Kind of memory: FRAM
Anzahl je Verpackung: 81 Stücke
Produkt ist nicht verfügbar
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FM25L16B-DGTR INFINEON TECHNOLOGIES Infineon-FM25L16B_16-Kbit_(2_K_8)_Serial_(SPI)_F-RAM-DataSheet-v11_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec917394180&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 16kbFRAM; SPI; 2kx8bit; 2.7÷3.6VDC; 20MHz; DFN8
Mounting: SMD
Operating temperature: -40...85°C
Memory organisation: 2kx8bit
Clock frequency: 20MHz
Kind of package: reel; tape
Memory: 16kb FRAM
Case: DFN8
Supply voltage: 2.7...3.6V DC
Type of integrated circuit: FRAM memory
Interface: SPI
Kind of memory: FRAM
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
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FM25V05-GTR INFINEON TECHNOLOGIES Infineon-FM25V05_512-Kbit_(64_K_8)_Serial_(SPI)_F-RAM-DataSheet-v09_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebe00d53121&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 512kbFRAM; SPI; 64kx8bit; 2÷3.6VDC; 40MHz; SOIC8
Mounting: SMD
Operating temperature: -40...85°C
Memory organisation: 64kx8bit
Clock frequency: 40MHz
Kind of package: reel; tape
Memory: 512kb FRAM
Case: SOIC8
Supply voltage: 2...3.6V DC
Type of integrated circuit: FRAM memory
Interface: SPI
Kind of memory: FRAM
Anzahl je Verpackung: 2500 Stücke
Produkt ist nicht verfügbar
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FM25V10-DG INFINEON TECHNOLOGIES Infineon-FM25V10_1_Mbit_128K_X_8_Serial_SPI_F_RAM-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c7e7124d1017f1be7c4f91516 Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 1MbFRAM; SPI; 128kx8bit; 2÷3.6VDC; 40MHz; DFN8
Mounting: SMD
Operating temperature: -40...85°C
Memory organisation: 128kx8bit
Clock frequency: 40MHz
Memory: 1Mb FRAM
Case: DFN8
Supply voltage: 2...3.6V DC
Type of integrated circuit: FRAM memory
Interface: SPI
Kind of memory: FRAM
Anzahl je Verpackung: 370 Stücke
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FM25VN10-GTR INFINEON TECHNOLOGIES Infineon-FM25V10_1-Mbit_(128_K_8)_Serial_(SPI)_F-RAM-DataSheet-v12_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebe03d63127&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files FM25VN10-GTR FRAM memories - integrated circuits
Produkt ist nicht verfügbar
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FP06R12W1T4B3BOMA1 FP06R12W1T4B3BOMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE89D8B20C73D5053D7&compId=FP06R12W1T4B3.pdf?ci_sign=b0d07d5c11c3511c198ac0969a13834d175d08d9 Category: IGBT modules
Description: Module: IGBT; diode/transistor; three-phase diode bridge; Ic: 6A
Power dissipation: 94W
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Technology: EasyPIM™ 1B
Topology: IGBT three-phase bridge; NTC thermistor; three-phase diode bridge
Type of semiconductor module: IGBT
Case: AG-EASY1B-1
Max. off-state voltage: 1.2kV
Semiconductor structure: diode/transistor
Gate-emitter voltage: ±20V
Collector current: 6A
Pulsed collector current: 12A
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1 Stücke:
Lieferzeit 7-14 Tag (e)
1+71.50 EUR
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FP100R12KT4B11BOSA1 INFINEON TECHNOLOGIES Infineon-FP100R12KT4_B11-DS-v03_00-en_de.pdf?fileId=db3a3043156fd57301161a6b3faf1e18 Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 1.2kV; 515W
Semiconductor structure: diode/transistor
Gate-emitter voltage: ±20V
Collector current: 100A
Pulsed collector current: 200A
Power dissipation: 515W
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: IGBT
Technology: EconoPIM™ 3
Topology: buck chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge
Case: AG-ECONO3-3
Max. off-state voltage: 1.2kV
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
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FP10R12W1T7B11BOMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB82531EE995D84C0AEB33F8BF&compId=FP10R12W1T7B11.pdf?ci_sign=f22158e9fd40755a352e4e202ff2f4db12e763f8 Category: IGBT modules
Description: Diode/transistor; three-phase diode bridge; Urmax: 1.2kV; Ic: 10A
Max. off-state voltage: 1.2kV
Semiconductor structure: diode/transistor
Gate-emitter voltage: ±20V
Collector current: 10A
Pulsed collector current: 20A
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Technology: EasyPIM™ 1B
Topology: IGBT three-phase bridge; NTC thermistor; three-phase diode bridge
Type of semiconductor module: IGBT
Case: AG-EASY1B-2
Anzahl je Verpackung: 1 Stücke
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FP15R12W1T4_B3 FP15R12W1T4_B3 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED7AFB03D87438E8A15&compId=FP15R12W1T4B3.pdf?ci_sign=87de13b40d54fef0761dd0ea90a3bd47bf610608 Category: IGBT modules
Description: Module: IGBT; diode/transistor; three-phase diode bridge; Ic: 15A
Type of semiconductor module: IGBT
Semiconductor structure: diode/transistor
Topology: IGBT three-phase bridge; NTC thermistor; three-phase diode bridge
Max. off-state voltage: 1.2kV
Collector current: 15A
Case: AG-EASY1B-1
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 30A
Power dissipation: 130W
Mechanical mounting: screw
Technology: EasyPIM™ 1B
Anzahl je Verpackung: 1 Stücke
auf Bestellung 20 Stücke:
Lieferzeit 7-14 Tag (e)
2+44.62 EUR
Mindestbestellmenge: 2
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FP20R06W1E3B11BOMA1 FP20R06W1E3B11BOMA1 INFINEON TECHNOLOGIES FP20R06W1E3B11.pdf Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 600V; Ic: 20A
Semiconductor structure: diode/transistor
Gate-emitter voltage: ±20V
Collector current: 20A
Pulsed collector current: 40A
Application: Inverter
Power dissipation: 94W
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: IGBT
Technology: EasyPIM™ 1B
Topology: buck chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge
Case: AG-EASY1B-2
Max. off-state voltage: 0.6kV
Anzahl je Verpackung: 24 Stücke
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FP25R12W1T7B11BPSA1 INFINEON TECHNOLOGIES FP25R12W1T7_B11.pdf Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 1.2kV; Ic: 25A
Semiconductor structure: diode/transistor
Gate-emitter voltage: ±20V
Collector current: 25A
Pulsed collector current: 50A
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: IGBT
Technology: EasyPIM™ 1B
Topology: buck chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge
Case: AG-EASY1B-2
Max. off-state voltage: 1.2kV
Anzahl je Verpackung: 1 Stücke
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FP30R06KE3BPSA1 INFINEON TECHNOLOGIES FP30R06KE3.pdf Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 600V; Ic: 30A
Max. off-state voltage: 0.6kV
Semiconductor structure: diode/transistor
Gate-emitter voltage: ±20V
Collector current: 30A
Pulsed collector current: 60A
Application: Inverter
Power dissipation: 125W
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: IGBT
Technology: EconoPIM™ 2
Topology: buck chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge
Case: AG-ECONO2C
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
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FP40R12KT3BOSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB90B41EDA90E7D4FE1A26C0C4&compId=FP40R12KT3BOSA1.pdf?ci_sign=0aa9bc43484615c4a3a0a984a8b9b20af98dcae6 Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 1.2kV; Ic: 40A
Type of semiconductor module: IGBT
Semiconductor structure: diode/transistor
Topology: buck chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge
Max. off-state voltage: 1.2kV
Collector current: 40A
Case: AG-ECONO2-5
Application: Inverter
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 80A
Power dissipation: 210W
Technology: EconoPIM™ 2
Mechanical mounting: screw
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
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FP50R06W2E3B11BOMA1 INFINEON TECHNOLOGIES FP50R06W2E3B11.pdf Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 600V; Ic: 50A
Semiconductor structure: diode/transistor
Gate-emitter voltage: ±20V
Collector current: 50A
Pulsed collector current: 100A
Power dissipation: 175W
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: IGBT
Technology: EasyPIM™ 2B
Topology: buck chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge
Case: AG-EASY2B-2
Max. off-state voltage: 0.6kV
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
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FP50R12KT3BOSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB90B41EDA90E7E5DA4B53C0C4&compId=FP50R12KT3BOSA1.pdf?ci_sign=e5bfa2ac21af8ba4412256f70bb668388033ff0a Category: IGBT modules
Description: Diode/transistor; buck chopper,three-phase diode bridge; 280W
Max. off-state voltage: 1.2kV
Semiconductor structure: diode/transistor
Gate-emitter voltage: ±20V
Collector current: 50A
Pulsed collector current: 100A
Application: Inverter
Power dissipation: 280W
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Technology: EconoPIM™ 2
Topology: buck chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge
Type of semiconductor module: IGBT
Case: AG-ECONO3-3
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
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FP75R12KT4 FP75R12KT4 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE7A3979250FD616749&compId=FP75R12KT4.pdf?ci_sign=0a787b86b74eb0847aa8fc8fe9a9278194481dfb Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 1.2kV; Ic: 75A
Type of semiconductor module: IGBT
Semiconductor structure: diode/transistor
Topology: buck chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge
Max. off-state voltage: 1.2kV
Collector current: 75A
Case: AG-ECONO3-3
Application: Inverter
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 150A
Power dissipation: 385W
Mechanical mounting: screw
Technology: EconoPIM™ 3
Anzahl je Verpackung: 1 Stücke
auf Bestellung 6 Stücke:
Lieferzeit 7-14 Tag (e)
1+278.85 EUR
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FS100R12W2T7B11BOMA1 INFINEON TECHNOLOGIES Infineon-FS100R12W2T7_B11-DS-v02_01-EN.pdf?fileId=5546d46267c74c9a01683d5d7ab56640 Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 100A
Pulsed collector current: 200A
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: IGBT
Technology: EasyPACK™ 2B
Topology: IGBT three-phase bridge; NTC thermistor
Case: AG-EASY2B-2
Max. off-state voltage: 1.2kV
Anzahl je Verpackung: 1 Stücke
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FS10R12VT3BOMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE89D8C676DF9BDB3D7&compId=FS10R12VT3.pdf?ci_sign=23a7050ec5881090dc6b45a7b7948f24badf5c4e Category: IGBT modules
Description: Transistor/transistor; IGBT three-phase bridge; Urmax: 1.2kV
Max. off-state voltage: 1.2kV
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 10A
Pulsed collector current: 20A
Power dissipation: 64W
Electrical mounting: Press-in PCB
Technology: EasyPACK™
Topology: IGBT three-phase bridge
Type of semiconductor module: IGBT
Case: AG-EASY750-1
Anzahl je Verpackung: 40 Stücke
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FS150R12KT4BOSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE89D8C87F547E493D7&compId=FS150R12KT4.pdf?ci_sign=b9e2fda300a75c51352ce08e24e35235e6476809 Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT three-phase bridge; NTC thermistor
Max. off-state voltage: 1.2kV
Collector current: 150A
Case: AG-ECONO3-4
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 300A
Power dissipation: 750W
Technology: EconoPACK™ 3
Mechanical mounting: screw
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
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FS150R17PE4BOSA1 INFINEON TECHNOLOGIES FS150R17PE4.pdf Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Collector current: 150A
Gate-emitter voltage: ±20V
Semiconductor structure: transistor/transistor
Max. off-state voltage: 1.7kV
Electrical mounting: Press-Fit; screw
Mechanical mounting: screw
Type of module: IGBT
Technology: EconoPACK™ 4
Case: AG-ECONO4-1
Topology: IGBT three-phase bridge; NTC thermistor
Pulsed collector current: 300A
Anzahl je Verpackung: 1 Stücke
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FS15R12VT3BOMA1 INFINEON TECHNOLOGIES Infineon-FS15R12VT3-DS-v02_00-en_de.pdf?fileId=db3a304412b407950112b431446153f7 FS15R12VT3 IGBT modules
Produkt ist nicht verfügbar
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ETT540N22P60HPSA1 pVersion=0046&contRep=ZT&docId=005056AB82531EE98AF5BECB9EB618BF&compId=ETD540N22P60_ETT540N22P60.pdf?ci_sign=7dde4d2a75d65a9ef62c31dbf4bd98fe87ec22df
Hersteller: INFINEON TECHNOLOGIES
Category: Thyristor modules
Description: Module: thyristor; double series; 2.2kV; 542A; BG-PB60ECO-1; screw
Case: BG-PB60ECO-1
Max. off-state voltage: 2.2kV
Max. forward voltage: 1.73V
Load current: 542A
Semiconductor structure: double series
Gate current: 250mA
Max. forward impulse current: 16.3kA
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Type of semiconductor module: thyristor
Anzahl je Verpackung: 1 Stücke
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ETT580N16P60HPSA1 Infineon-eTT580N16P60-DS-v03_06-EN.pdf?fileId=5546d46265487f7b01658027a49f34b0
Hersteller: INFINEON TECHNOLOGIES
ETT580N16P60HPSA1 Thyristor modules
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ETT630N16P60HPSA1 pVersion=0046&contRep=ZT&docId=005056AB82531EE98AF542F7242CF8BF&compId=ETD630N16P60_ETT630N16P60.pdf?ci_sign=ad83636680462f41f1cb1c901a1d23ec4567dd0f
Hersteller: INFINEON TECHNOLOGIES
Category: Thyristor modules
Description: Module: thyristor; double series; 1.6kV; 635A; BG-PB60ECO-1; screw
Type of semiconductor module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.6kV
Load current: 635A
Case: BG-PB60ECO-1
Max. forward voltage: 1.37V
Max. forward impulse current: 19.8kA
Gate current: 250mA
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
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EVAL-IMM101T-015TOBO1 (SP004177748) pVersion=0046&contRep=ZT&docId=005056AB90B41EDBADF7A0174CD460C7&compId=EVALIMM101T015TOBO.PDF?ci_sign=1c41203658233780afea79eb8fca0913b805c658
EVAL-IMM101T-015TOBO1 (SP004177748)
+1
Hersteller: INFINEON TECHNOLOGIES
Category: Development kits - others
Description: Dev.kit: evaluation; prototype board; Comp: IMM101T-015M; motors
Application: motors
Kit contents: prototype board
Interface: GPIO; I2C; PWM; UART
Type of development kit: evaluation
Kind of module: motor driver
Components: IMM101T-015M
Kind of connector: screw terminal x2
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
2+69.78 EUR
Mindestbestellmenge: 2
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EVAL-IMM101T-046TOBO1 (SP004177752) EVALIMM101T015TOBO.PDF
EVAL-IMM101T-046TOBO1 (SP004177752)
+2
Hersteller: INFINEON TECHNOLOGIES
Category: Development kits - others
Description: Dev.kit: evaluation; prototype board; Comp: IMM101T-046M; motors
Type of development kit: evaluation
Kind of module: motor driver
Components: IMM101T-046M
Kind of connector: screw terminal x2
Kit contents: prototype board
Interface: GPIO; I2C; PWM; UART
Application: motors
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
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F3L300R07PE4
Hersteller: INFINEON TECHNOLOGIES
F3L300R07PE4 IGBT modules
Produkt ist nicht verfügbar
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F4150R12KS4BOSA1 F4150R12KS4BOSA1.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge x2; 960W
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 150A
Pulsed collector current: 300A
Power dissipation: 960W
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: IGBT
Technology: EconoPACK™ 3
Topology: IGBT half-bridge x2; NTC thermistor
Case: AG-ECONO3-4
Max. off-state voltage: 1.2kV
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
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F475R06W1E3BOMA1 Infineon-F4_75R06W1E3-DS-v03_00-en_de.pdf?fileId=db3a304313b8b5a60113baa00d5d00b8
Hersteller: INFINEON TECHNOLOGIES
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge x2; Ic: 75A
Power dissipation: 275W
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Technology: EasyPACK™ 1B
Topology: IGBT half-bridge x2; NTC thermistor
Type of semiconductor module: IGBT
Case: AG-EASY1B-1
Max. off-state voltage: 0.6kV
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 75A
Pulsed collector current: 150A
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
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F475R12KS4BOSA1 F4-75R12KS4.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge x2; Ic: 75A
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 75A
Pulsed collector current: 150A
Power dissipation: 500W
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: IGBT
Technology: EconoPACK™ 2
Topology: IGBT half-bridge x2; NTC thermistor
Case: AG-ECONO2-6
Max. off-state voltage: 1.2kV
Anzahl je Verpackung: 10 Stücke
Produkt ist nicht verfügbar
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FB30R06W1E3BOMA1 FB30R06W1E3.pdf
FB30R06W1E3BOMA1
Hersteller: INFINEON TECHNOLOGIES
Category: IGBT modules
Description: Module: IGBT; diode/transistor; single-phase diode bridge; 115W
Max. off-state voltage: 0.6kV
Semiconductor structure: diode/transistor
Gate-emitter voltage: ±20V
Collector current: 30A
Pulsed collector current: 60A
Power dissipation: 115W
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: IGBT
Technology: EasyPIM™ 1B
Topology: IGBT three-phase bridge; NTC thermistor; single-phase diode bridge
Case: AG-EASY1B-1
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
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FD1000R33HE3KBPSA1 Infineon-FD1000R33HE3_K-DS-v03_01-en_de.pdf?fileId=db3a30431ce5fb52011d76007b9a7266
Hersteller: INFINEON TECHNOLOGIES
FD1000R33HE3KBPSA1 IGBT modules
Produkt ist nicht verfügbar
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FD300R06KE3HOSA1 Infineon-FD300R06KE3-DS-v02_02-en_de.pdf?fileId=db3a30431689f4420116d2b4ead50bd7
Hersteller: INFINEON TECHNOLOGIES
FD300R06KE3 IGBT modules
Produkt ist nicht verfügbar
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FD300R12KE3HOSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE89CDFE1588717B3D7&compId=FD300R12KE3.pdf?ci_sign=4f9165ddb8c39d579e888c281879100e2a537fa6
FD300R12KE3HOSA1
Hersteller: INFINEON TECHNOLOGIES
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.2kV; screw
Type of semiconductor module: IGBT
Semiconductor structure: diode/transistor
Max. off-state voltage: 1.2kV
Case: AG-62MM-1
Electrical mounting: screw
Mechanical mounting: screw
Application: Inverter
Power dissipation: 1.47kW
Topology: boost chopper
Gate-emitter voltage: ±20V
Collector current: 300A
Pulsed collector current: 600A
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
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FF100R12RT4HOSA1 Infineon-FF100R12RT4-DS-v02_01-en_de.pdf?fileId=db3a304327b8975001280601349b615b
Hersteller: INFINEON TECHNOLOGIES
FF100R12RT4HOSA1 IGBT modules
Produkt ist nicht verfügbar
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FF200R12KE3HOSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE78FD6BFDD0F906745&compId=FF200R12KE3.pdf?ci_sign=f153117c762ff8f8b62ebc993737473163b2a468
FF200R12KE3HOSA1
Hersteller: INFINEON TECHNOLOGIES
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 200A
Max. off-state voltage: 1.2kV
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 200A
Pulsed collector current: 400A
Power dissipation: 1.05kW
Electrical mounting: screw
Mechanical mounting: screw
Topology: IGBT half-bridge
Type of semiconductor module: IGBT
Case: AG-62MM-1
Anzahl je Verpackung: 1 Stücke
auf Bestellung 10 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
1+158.02 EUR
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FF200R12KE4PHOSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE89D8A348FD319B3D7&compId=FF200R12KE4P.pdf?ci_sign=c3b8d527485471d02faae9add4b3248119e8cbfe
FF200R12KE4PHOSA1
Hersteller: INFINEON TECHNOLOGIES
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 200A
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Max. off-state voltage: 1.2kV
Case: AG-62MM-1
Electrical mounting: screw
Mechanical mounting: screw
Topology: IGBT half-bridge
Gate-emitter voltage: ±20V
Collector current: 200A
Pulsed collector current: 400A
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
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FF200R12KT3EHOSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE89D8A398A572F53D7&compId=FF200R12KT3E.pdf?ci_sign=7d379c22644bc6b2701cdde2fb53b0018b9a5173
FF200R12KT3EHOSA1
Hersteller: INFINEON TECHNOLOGIES
Category: IGBT modules
Description: Module: IGBT; transistor/transistor,common emitter; IGBT x2
Type of semiconductor module: IGBT
Semiconductor structure: common emitter; transistor/transistor
Max. off-state voltage: 1.2kV
Case: AG-62MM-1
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Power dissipation: 1.05kW
Topology: IGBT x2
Gate-emitter voltage: ±20V
Collector current: 200A
Pulsed collector current: 400A
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
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FF200R12KT4HOSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED6BFFD7E380C25A259&compId=FF200R12KT4.pdf?ci_sign=5e50d6ff781eb9cb0c9d8f539521efc04dd4d0ba
FF200R12KT4HOSA1
Hersteller: INFINEON TECHNOLOGIES
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 200A
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Max. off-state voltage: 1.2kV
Case: AG-62MM-1
Electrical mounting: screw
Mechanical mounting: screw
Power dissipation: 1.1kW
Topology: IGBT half-bridge
Gate-emitter voltage: ±20V
Collector current: 200A
Pulsed collector current: 400A
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
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FF200R17KE4HOSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE89D8A60961A4E73D7&compId=FF200R17KE4.pdf?ci_sign=57d7f67c089c0a8f2ad55fa545e7f1876fe92b70
FF200R17KE4HOSA1
Hersteller: INFINEON TECHNOLOGIES
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 200A
Max. off-state voltage: 1.7kV
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 200A
Pulsed collector current: 400A
Power dissipation: 1.25kW
Electrical mounting: screw
Mechanical mounting: screw
Topology: IGBT half-bridge
Type of semiconductor module: IGBT
Case: AG-62MM-1
Anzahl je Verpackung: 1 Stücke
auf Bestellung 3 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
1+239.81 EUR
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FF300R06KE3
Hersteller: INFINEON TECHNOLOGIES
FF300R06KE3 IGBT modules
Produkt ist nicht verfügbar
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FF300R12KE3 description
Hersteller: INFINEON TECHNOLOGIES
FF300R12KE3 IGBT modules
Produkt ist nicht verfügbar
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FF300R12KS4 pVersion=0046&contRep=ZT&docId=005056AB752F1ED5AA9345B52A7BD1CC&compId=FF300R12KS4-dte.pdf?ci_sign=915a25c84faf5048f01515fc4bae1ba7d52cac62
FF300R12KS4
Hersteller: INFINEON TECHNOLOGIES
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 300A
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT half-bridge
Max. off-state voltage: 1.2kV
Collector current: 300A
Case: AG-62MM-1
Electrical mounting: screw
Gate-emitter voltage: ±20V
Pulsed collector current: 600A
Power dissipation: 1.95kW
Mechanical mounting: screw
Anzahl je Verpackung: 1 Stücke
auf Bestellung 6 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
1+262.12 EUR
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FF300R12KT3EHOSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE89D8A6B34C2C213D7&compId=FF300R12KT3E.pdf?ci_sign=fd144bb2674acaa882bf1dd9f81d465f7011f7f3
FF300R12KT3EHOSA1
Hersteller: INFINEON TECHNOLOGIES
Category: IGBT modules
Description: Module: IGBT; transistor/transistor,common emitter; IGBT x2
Type of semiconductor module: IGBT
Semiconductor structure: common emitter; transistor/transistor
Max. off-state voltage: 1.2kV
Case: AG-62MM-1
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Power dissipation: 1.45kW
Topology: IGBT x2
Gate-emitter voltage: ±20V
Collector current: 300A
Pulsed collector current: 600A
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
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FF300R12KT4HOSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED6BFFD80D064564259&compId=FF300R12KT4.pdf?ci_sign=3b3b4ec7904ace87e4bb423a0f8f1a4cd884a9ab
FF300R12KT4HOSA1
Hersteller: INFINEON TECHNOLOGIES
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 300A
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Max. off-state voltage: 1.2kV
Case: AG-62MM-1
Electrical mounting: screw
Mechanical mounting: screw
Power dissipation: 1.6kW
Topology: IGBT half-bridge
Gate-emitter voltage: ±20V
Collector current: 300A
Pulsed collector current: 600A
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
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FF300R17ME4BOSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE89D8A8BDE17AC13D7&compId=FF300R17ME4.pdf?ci_sign=3165dc23580ded91f906ca73de1a5b015a0a9dcf
Hersteller: INFINEON TECHNOLOGIES
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 300A
Gate-emitter voltage: ±20V
Collector current: 300A
Pulsed collector current: 600A
Power dissipation: 1.8kW
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Technology: EconoDUAL™ 3
Topology: IGBT half-bridge; NTC thermistor
Type of semiconductor module: IGBT
Case: AG-ECONOD-3
Max. off-state voltage: 1.7kV
Semiconductor structure: transistor/transistor
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
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FF450R06ME3 pVersion=0046&contRep=ZT&docId=005056AB752F1EE584E51EA023EE8469&compId=FF450R06ME3.pdf?ci_sign=9139935a6e53df2f719cfd81b2f1553e8798a0a8
FF450R06ME3
Hersteller: INFINEON TECHNOLOGIES
Category: IGBT modules
Description: Transistor/transistor; IGBT half-bridge,NTC thermistor; 1.25kW
Max. off-state voltage: 0.6kV
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 450A
Pulsed collector current: 900A
Power dissipation: 1.25kW
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Technology: EconoDUAL™ 3
Topology: IGBT half-bridge; NTC thermistor
Type of semiconductor module: IGBT
Case: AG-ECONOD-3
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
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FF450R12KE4HOSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED6ABF791B428A7DE27&compId=FF450R12KE4-DTE.pdf?ci_sign=ea990a008d4cd0a41ce5a30a9a09bff4050731f0
Hersteller: INFINEON TECHNOLOGIES
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 450A
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Max. off-state voltage: 1.2kV
Case: AG-62MM
Electrical mounting: screw
Mechanical mounting: screw
Power dissipation: 2.4kW
Topology: IGBT half-bridge
Gate-emitter voltage: ±20V
Collector current: 450A
Pulsed collector current: 900A
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
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FF450R12KT4HOSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5869893D7BCFB4469&compId=FF450R12KT4.pdf?ci_sign=ae61a33310ba1063c05140bf85a5eae3ea9365d5
Hersteller: INFINEON TECHNOLOGIES
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 450A
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Max. off-state voltage: 1.2kV
Case: AG-62MM
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Power dissipation: 2.4kW
Topology: IGBT half-bridge
Gate-emitter voltage: ±20V
Collector current: 450A
Pulsed collector current: 900A
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
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FF450R33T3E3B5BPSA1 Infineon-FF450R33T3E3_B5-DS-v03_00-EN.pdf?fileId=5546d46267c74c9a01683cd2886064d9
Hersteller: INFINEON TECHNOLOGIES
Category: IGBT modules
Description: Transistor/transistor; IGBT half-bridge; Urmax: 3.3kV; Ic: 450A
Max. off-state voltage: 3.3kV
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 450A
Pulsed collector current: 900A
Electrical mounting: screw
Mechanical mounting: screw
Technology: XHP™3
Topology: IGBT half-bridge
Type of semiconductor module: IGBT
Case: AG-XHP100-6
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
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FF45MR12W1M1B11BOMA1 pVersion=0046&contRep=ZT&docId=005056AB82531EE98AF602B81B1258BF&compId=FF45MR12W1M1B11.pdf?ci_sign=f5b3f9ed9a3dcffcc3c66b2489eb90dc08bf9b53
FF45MR12W1M1B11BOMA1
Hersteller: INFINEON TECHNOLOGIES
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 1.2kV; 25A; AG-EASY1BM-2; Idm: 50A
Type of semiconductor module: MOSFET transistor
Semiconductor structure: transistor/transistor
Drain-source voltage: 1.2kV
Drain current: 25A
Case: AG-EASY1BM-2
Electrical mounting: Press-Fit
Polarisation: unipolar
On-state resistance: 45mΩ
Pulsed drain current: 50A
Technology: CoolSiC™; SiC
Gate-source voltage: -10...20V
Mechanical mounting: screw
Topology: MOSFET half-bridge; NTC thermistor
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
1+71.50 EUR
10+66.47 EUR
Im Einkaufswagen  Stück im Wert von  UAH
FF500R17KE4BOSA1 FF500R17KE4.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 500A
Type of module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT half-bridge
Max. off-state voltage: 1.7kV
Collector current: 500A
Case: AG-62MM-1
Electrical mounting: screw
Gate-emitter voltage: ±20V
Pulsed collector current: 1kA
Mechanical mounting: screw
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
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FF900R12IE4
Hersteller: INFINEON TECHNOLOGIES
FF900R12IE4 IGBT modules
Produkt ist nicht verfügbar
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FF900R12ME7B11BOSA1 Infineon-FF900R12ME7_B11-DataSheet-v03_00-EN.pdf?fileId=5546d4626e651a41016e8264085914c8
Hersteller: INFINEON TECHNOLOGIES
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 900A
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 900A
Pulsed collector current: 1.8kA
Electrical mounting: Press-Fit; screw
Mechanical mounting: screw
Type of module: IGBT
Technology: TRENCHSTOP™
Topology: IGBT half-bridge; NTC thermistor
Case: AG-ECONOD-5
Max. off-state voltage: 1.2kV
Anzahl je Verpackung: 6 Stücke
Produkt ist nicht verfügbar
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FM24C64B-GTR Infineon-FM24C64B_64-Kbit_(8_K_8)_Serial_(I2C)_F-RAM-DataSheet-v10_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebdee5b30f8
Hersteller: INFINEON TECHNOLOGIES
Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 64kbFRAM; I2C; 8kx8bit; 4.5÷5.5VDC; 1MHz; SOIC8
Type of integrated circuit: FRAM memory
Kind of memory: FRAM
Memory: 64kb FRAM
Interface: I2C
Memory organisation: 8kx8bit
Clock frequency: 1MHz
Mounting: SMD
Case: SOIC8
Operating temperature: -40...85°C
Kind of package: reel; tape
Supply voltage: 4.5...5.5V DC
Anzahl je Verpackung: 2500 Stücke
Produkt ist nicht verfügbar
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FM24CL16B-DG Infineon-FM24CL16B_16-Kbit_(2_K_8)_Serial_(I2C)_F-RAM-DataSheet-v13_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec99cb241e9
Hersteller: INFINEON TECHNOLOGIES
Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 16kbFRAM; I2C; 2kx8bit; 2.7÷3.65VDC; 1MHz; DFN8
Type of integrated circuit: FRAM memory
Kind of memory: FRAM
Memory: 16kb FRAM
Interface: I2C
Memory organisation: 2kx8bit
Supply voltage: 2.7...3.65V DC
Clock frequency: 1MHz
Case: DFN8
Mounting: SMD
Operating temperature: -40...85°C
Anzahl je Verpackung: 1620 Stücke
Produkt ist nicht verfügbar
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FM24CL16B-DGTR Infineon-FM24CL16B_16-Kbit_(2_K_8)_Serial_(I2C)_F-RAM-DataSheet-v13_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec99cb241e9
Hersteller: INFINEON TECHNOLOGIES
Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 16kbFRAM; I2C; 2kx8bit; 2.7÷3.65VDC; 1MHz; DFN8
Type of integrated circuit: FRAM memory
Kind of memory: FRAM
Memory: 16kb FRAM
Interface: I2C
Memory organisation: 2kx8bit
Supply voltage: 2.7...3.65V DC
Clock frequency: 1MHz
Case: DFN8
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
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FM24CL64B-DGTR Infineon-FM24CL64B_64-Kbit_(8_K_8)_Serial_(I2C)_F-RAM-DataSheet-v12_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebdf13330fe&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
Hersteller: INFINEON TECHNOLOGIES
Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 64kbFRAM; I2C; 8kx8bit; 2.7÷3.6VDC; 1MHz; DFN8
Mounting: SMD
Operating temperature: -40...85°C
Memory organisation: 8kx8bit
Clock frequency: 1MHz
Kind of package: reel; tape
Memory: 64kb FRAM
Case: DFN8
Supply voltage: 2.7...3.6V DC
Type of integrated circuit: FRAM memory
Interface: I2C
Kind of memory: FRAM
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
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FM25CL64B-DGTR Infineon-FM25CL64B_64-Kbit_(8_K_8)_Serial_(SPI)_F-RAM-DataSheet-v11_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebdfcd83119&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
Hersteller: INFINEON TECHNOLOGIES
Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 64kbFRAM; SPI; 8kx8bit; 2.7÷3.65VDC; 20MHz; DFN8
Mounting: SMD
Operating temperature: -40...85°C
Memory organisation: 8kx8bit
Clock frequency: 20MHz
Kind of package: reel; tape
Memory: 64kb FRAM
Case: DFN8
Supply voltage: 2.7...3.65V DC
Type of integrated circuit: FRAM memory
Interface: SPI
Kind of memory: FRAM
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
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FM25L04B-DGTR Infineon-FM25L04B_4-Kbit_(512_8)_Serial_(SPI)_F-RAM-DataSheet-v12_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec90ed44178&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
Hersteller: INFINEON TECHNOLOGIES
Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 4kbFRAM; SPI; 512x8bit; 2.7÷3.6VDC; 20MHz; DFN8
Mounting: SMD
Operating temperature: -40...85°C
Memory organisation: 512x8bit
Clock frequency: 20MHz
Kind of package: reel; tape
Memory: 4kb FRAM
Case: DFN8
Supply voltage: 2.7...3.6V DC
Type of integrated circuit: FRAM memory
Interface: SPI
Kind of memory: FRAM
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
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FM25L16B-DG Infineon-FM25L16B_16-Kbit_(2_K_8)_Serial_(SPI)_F-RAM-DataSheet-v11_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec917394180&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
Hersteller: INFINEON TECHNOLOGIES
Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 16kbFRAM; SPI; 2kx8bit; 2.7÷3.6VDC; 20MHz; DFN8
Mounting: SMD
Operating temperature: -40...85°C
Memory organisation: 2kx8bit
Clock frequency: 20MHz
Memory: 16kb FRAM
Case: DFN8
Supply voltage: 2.7...3.6V DC
Type of integrated circuit: FRAM memory
Interface: SPI
Kind of memory: FRAM
Anzahl je Verpackung: 81 Stücke
Produkt ist nicht verfügbar
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FM25L16B-DGTR Infineon-FM25L16B_16-Kbit_(2_K_8)_Serial_(SPI)_F-RAM-DataSheet-v11_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec917394180&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
Hersteller: INFINEON TECHNOLOGIES
Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 16kbFRAM; SPI; 2kx8bit; 2.7÷3.6VDC; 20MHz; DFN8
Mounting: SMD
Operating temperature: -40...85°C
Memory organisation: 2kx8bit
Clock frequency: 20MHz
Kind of package: reel; tape
Memory: 16kb FRAM
Case: DFN8
Supply voltage: 2.7...3.6V DC
Type of integrated circuit: FRAM memory
Interface: SPI
Kind of memory: FRAM
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
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FM25V05-GTR Infineon-FM25V05_512-Kbit_(64_K_8)_Serial_(SPI)_F-RAM-DataSheet-v09_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebe00d53121&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
Hersteller: INFINEON TECHNOLOGIES
Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 512kbFRAM; SPI; 64kx8bit; 2÷3.6VDC; 40MHz; SOIC8
Mounting: SMD
Operating temperature: -40...85°C
Memory organisation: 64kx8bit
Clock frequency: 40MHz
Kind of package: reel; tape
Memory: 512kb FRAM
Case: SOIC8
Supply voltage: 2...3.6V DC
Type of integrated circuit: FRAM memory
Interface: SPI
Kind of memory: FRAM
Anzahl je Verpackung: 2500 Stücke
Produkt ist nicht verfügbar
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FM25V10-DG Infineon-FM25V10_1_Mbit_128K_X_8_Serial_SPI_F_RAM-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c7e7124d1017f1be7c4f91516
Hersteller: INFINEON TECHNOLOGIES
Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 1MbFRAM; SPI; 128kx8bit; 2÷3.6VDC; 40MHz; DFN8
Mounting: SMD
Operating temperature: -40...85°C
Memory organisation: 128kx8bit
Clock frequency: 40MHz
Memory: 1Mb FRAM
Case: DFN8
Supply voltage: 2...3.6V DC
Type of integrated circuit: FRAM memory
Interface: SPI
Kind of memory: FRAM
Anzahl je Verpackung: 370 Stücke
Produkt ist nicht verfügbar
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FM25VN10-GTR Infineon-FM25V10_1-Mbit_(128_K_8)_Serial_(SPI)_F-RAM-DataSheet-v12_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebe03d63127&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
Hersteller: INFINEON TECHNOLOGIES
FM25VN10-GTR FRAM memories - integrated circuits
Produkt ist nicht verfügbar
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FP06R12W1T4B3BOMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE89D8B20C73D5053D7&compId=FP06R12W1T4B3.pdf?ci_sign=b0d07d5c11c3511c198ac0969a13834d175d08d9
FP06R12W1T4B3BOMA1
Hersteller: INFINEON TECHNOLOGIES
Category: IGBT modules
Description: Module: IGBT; diode/transistor; three-phase diode bridge; Ic: 6A
Power dissipation: 94W
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Technology: EasyPIM™ 1B
Topology: IGBT three-phase bridge; NTC thermistor; three-phase diode bridge
Type of semiconductor module: IGBT
Case: AG-EASY1B-1
Max. off-state voltage: 1.2kV
Semiconductor structure: diode/transistor
Gate-emitter voltage: ±20V
Collector current: 6A
Pulsed collector current: 12A
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
1+71.50 EUR
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FP100R12KT4B11BOSA1 Infineon-FP100R12KT4_B11-DS-v03_00-en_de.pdf?fileId=db3a3043156fd57301161a6b3faf1e18
Hersteller: INFINEON TECHNOLOGIES
Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 1.2kV; 515W
Semiconductor structure: diode/transistor
Gate-emitter voltage: ±20V
Collector current: 100A
Pulsed collector current: 200A
Power dissipation: 515W
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: IGBT
Technology: EconoPIM™ 3
Topology: buck chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge
Case: AG-ECONO3-3
Max. off-state voltage: 1.2kV
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
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FP10R12W1T7B11BOMA1 pVersion=0046&contRep=ZT&docId=005056AB82531EE995D84C0AEB33F8BF&compId=FP10R12W1T7B11.pdf?ci_sign=f22158e9fd40755a352e4e202ff2f4db12e763f8
Hersteller: INFINEON TECHNOLOGIES
Category: IGBT modules
Description: Diode/transistor; three-phase diode bridge; Urmax: 1.2kV; Ic: 10A
Max. off-state voltage: 1.2kV
Semiconductor structure: diode/transistor
Gate-emitter voltage: ±20V
Collector current: 10A
Pulsed collector current: 20A
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Technology: EasyPIM™ 1B
Topology: IGBT three-phase bridge; NTC thermistor; three-phase diode bridge
Type of semiconductor module: IGBT
Case: AG-EASY1B-2
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
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FP15R12W1T4_B3 pVersion=0046&contRep=ZT&docId=005056AB752F1ED7AFB03D87438E8A15&compId=FP15R12W1T4B3.pdf?ci_sign=87de13b40d54fef0761dd0ea90a3bd47bf610608
FP15R12W1T4_B3
Hersteller: INFINEON TECHNOLOGIES
Category: IGBT modules
Description: Module: IGBT; diode/transistor; three-phase diode bridge; Ic: 15A
Type of semiconductor module: IGBT
Semiconductor structure: diode/transistor
Topology: IGBT three-phase bridge; NTC thermistor; three-phase diode bridge
Max. off-state voltage: 1.2kV
Collector current: 15A
Case: AG-EASY1B-1
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 30A
Power dissipation: 130W
Mechanical mounting: screw
Technology: EasyPIM™ 1B
Anzahl je Verpackung: 1 Stücke
auf Bestellung 20 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
2+44.62 EUR
Mindestbestellmenge: 2
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FP20R06W1E3B11BOMA1 FP20R06W1E3B11.pdf
FP20R06W1E3B11BOMA1
Hersteller: INFINEON TECHNOLOGIES
Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 600V; Ic: 20A
Semiconductor structure: diode/transistor
Gate-emitter voltage: ±20V
Collector current: 20A
Pulsed collector current: 40A
Application: Inverter
Power dissipation: 94W
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: IGBT
Technology: EasyPIM™ 1B
Topology: buck chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge
Case: AG-EASY1B-2
Max. off-state voltage: 0.6kV
Anzahl je Verpackung: 24 Stücke
Produkt ist nicht verfügbar
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FP25R12W1T7B11BPSA1 FP25R12W1T7_B11.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 1.2kV; Ic: 25A
Semiconductor structure: diode/transistor
Gate-emitter voltage: ±20V
Collector current: 25A
Pulsed collector current: 50A
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: IGBT
Technology: EasyPIM™ 1B
Topology: buck chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge
Case: AG-EASY1B-2
Max. off-state voltage: 1.2kV
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
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FP30R06KE3BPSA1 FP30R06KE3.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 600V; Ic: 30A
Max. off-state voltage: 0.6kV
Semiconductor structure: diode/transistor
Gate-emitter voltage: ±20V
Collector current: 30A
Pulsed collector current: 60A
Application: Inverter
Power dissipation: 125W
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: IGBT
Technology: EconoPIM™ 2
Topology: buck chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge
Case: AG-ECONO2C
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
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FP40R12KT3BOSA1 pVersion=0046&contRep=ZT&docId=005056AB90B41EDA90E7D4FE1A26C0C4&compId=FP40R12KT3BOSA1.pdf?ci_sign=0aa9bc43484615c4a3a0a984a8b9b20af98dcae6
Hersteller: INFINEON TECHNOLOGIES
Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 1.2kV; Ic: 40A
Type of semiconductor module: IGBT
Semiconductor structure: diode/transistor
Topology: buck chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge
Max. off-state voltage: 1.2kV
Collector current: 40A
Case: AG-ECONO2-5
Application: Inverter
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 80A
Power dissipation: 210W
Technology: EconoPIM™ 2
Mechanical mounting: screw
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
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FP50R06W2E3B11BOMA1 FP50R06W2E3B11.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 600V; Ic: 50A
Semiconductor structure: diode/transistor
Gate-emitter voltage: ±20V
Collector current: 50A
Pulsed collector current: 100A
Power dissipation: 175W
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: IGBT
Technology: EasyPIM™ 2B
Topology: buck chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge
Case: AG-EASY2B-2
Max. off-state voltage: 0.6kV
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
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FP50R12KT3BOSA1 pVersion=0046&contRep=ZT&docId=005056AB90B41EDA90E7E5DA4B53C0C4&compId=FP50R12KT3BOSA1.pdf?ci_sign=e5bfa2ac21af8ba4412256f70bb668388033ff0a
Hersteller: INFINEON TECHNOLOGIES
Category: IGBT modules
Description: Diode/transistor; buck chopper,three-phase diode bridge; 280W
Max. off-state voltage: 1.2kV
Semiconductor structure: diode/transistor
Gate-emitter voltage: ±20V
Collector current: 50A
Pulsed collector current: 100A
Application: Inverter
Power dissipation: 280W
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Technology: EconoPIM™ 2
Topology: buck chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge
Type of semiconductor module: IGBT
Case: AG-ECONO3-3
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
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FP75R12KT4 pVersion=0046&contRep=ZT&docId=005056AB752F1EE7A3979250FD616749&compId=FP75R12KT4.pdf?ci_sign=0a787b86b74eb0847aa8fc8fe9a9278194481dfb
FP75R12KT4
Hersteller: INFINEON TECHNOLOGIES
Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 1.2kV; Ic: 75A
Type of semiconductor module: IGBT
Semiconductor structure: diode/transistor
Topology: buck chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge
Max. off-state voltage: 1.2kV
Collector current: 75A
Case: AG-ECONO3-3
Application: Inverter
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 150A
Power dissipation: 385W
Mechanical mounting: screw
Technology: EconoPIM™ 3
Anzahl je Verpackung: 1 Stücke
auf Bestellung 6 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
1+278.85 EUR
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FS100R12W2T7B11BOMA1 Infineon-FS100R12W2T7_B11-DS-v02_01-EN.pdf?fileId=5546d46267c74c9a01683d5d7ab56640
Hersteller: INFINEON TECHNOLOGIES
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 100A
Pulsed collector current: 200A
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: IGBT
Technology: EasyPACK™ 2B
Topology: IGBT three-phase bridge; NTC thermistor
Case: AG-EASY2B-2
Max. off-state voltage: 1.2kV
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
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FS10R12VT3BOMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE89D8C676DF9BDB3D7&compId=FS10R12VT3.pdf?ci_sign=23a7050ec5881090dc6b45a7b7948f24badf5c4e
Hersteller: INFINEON TECHNOLOGIES
Category: IGBT modules
Description: Transistor/transistor; IGBT three-phase bridge; Urmax: 1.2kV
Max. off-state voltage: 1.2kV
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 10A
Pulsed collector current: 20A
Power dissipation: 64W
Electrical mounting: Press-in PCB
Technology: EasyPACK™
Topology: IGBT three-phase bridge
Type of semiconductor module: IGBT
Case: AG-EASY750-1
Anzahl je Verpackung: 40 Stücke
Produkt ist nicht verfügbar
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FS150R12KT4BOSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE89D8C87F547E493D7&compId=FS150R12KT4.pdf?ci_sign=b9e2fda300a75c51352ce08e24e35235e6476809
Hersteller: INFINEON TECHNOLOGIES
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT three-phase bridge; NTC thermistor
Max. off-state voltage: 1.2kV
Collector current: 150A
Case: AG-ECONO3-4
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 300A
Power dissipation: 750W
Technology: EconoPACK™ 3
Mechanical mounting: screw
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
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FS150R17PE4BOSA1 FS150R17PE4.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Collector current: 150A
Gate-emitter voltage: ±20V
Semiconductor structure: transistor/transistor
Max. off-state voltage: 1.7kV
Electrical mounting: Press-Fit; screw
Mechanical mounting: screw
Type of module: IGBT
Technology: EconoPACK™ 4
Case: AG-ECONO4-1
Topology: IGBT three-phase bridge; NTC thermistor
Pulsed collector current: 300A
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
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FS15R12VT3BOMA1 Infineon-FS15R12VT3-DS-v02_00-en_de.pdf?fileId=db3a304412b407950112b431446153f7
Hersteller: INFINEON TECHNOLOGIES
FS15R12VT3 IGBT modules
Produkt ist nicht verfügbar
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