Produkte > INFINEON TECHNOLOGIES > Alle Produkte des Herstellers INFINEON TECHNOLOGIES (149782) > Seite 1264 nach 2497
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ETT540N22P60HPSA1 | INFINEON TECHNOLOGIES |
![]() Description: Module: thyristor; double series; 2.2kV; 542A; BG-PB60ECO-1; screw Case: BG-PB60ECO-1 Max. off-state voltage: 2.2kV Max. forward voltage: 1.73V Load current: 542A Semiconductor structure: double series Gate current: 250mA Max. forward impulse current: 16.3kA Electrical mounting: FASTON connectors; screw Mechanical mounting: screw Type of semiconductor module: thyristor Anzahl je Verpackung: 1 Stücke |
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ETT580N16P60HPSA1 | INFINEON TECHNOLOGIES |
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ETT630N16P60HPSA1 | INFINEON TECHNOLOGIES |
![]() Description: Module: thyristor; double series; 1.6kV; 635A; BG-PB60ECO-1; screw Type of semiconductor module: thyristor Semiconductor structure: double series Max. off-state voltage: 1.6kV Load current: 635A Case: BG-PB60ECO-1 Max. forward voltage: 1.37V Max. forward impulse current: 19.8kA Gate current: 250mA Electrical mounting: FASTON connectors; screw Mechanical mounting: screw Anzahl je Verpackung: 1 Stücke |
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EVAL-IMM101T-015TOBO1 (SP004177748) | INFINEON TECHNOLOGIES |
![]() Description: Dev.kit: evaluation; prototype board; Comp: IMM101T-015M; motors Application: motors Kit contents: prototype board Interface: GPIO; I2C; PWM; UART Type of development kit: evaluation Kind of module: motor driver Components: IMM101T-015M Kind of connector: screw terminal x2 Anzahl je Verpackung: 1 Stücke |
auf Bestellung 2 Stücke: Lieferzeit 7-14 Tag (e) |
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EVAL-IMM101T-046TOBO1 (SP004177752) | INFINEON TECHNOLOGIES |
![]() Description: Dev.kit: evaluation; prototype board; Comp: IMM101T-046M; motors Type of development kit: evaluation Kind of module: motor driver Components: IMM101T-046M Kind of connector: screw terminal x2 Kit contents: prototype board Interface: GPIO; I2C; PWM; UART Application: motors Anzahl je Verpackung: 1 Stücke |
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F3L300R07PE4 | INFINEON TECHNOLOGIES | F3L300R07PE4 IGBT modules |
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F4150R12KS4BOSA1 | INFINEON TECHNOLOGIES |
![]() Description: Module: IGBT; transistor/transistor; IGBT half-bridge x2; 960W Semiconductor structure: transistor/transistor Gate-emitter voltage: ±20V Collector current: 150A Pulsed collector current: 300A Power dissipation: 960W Electrical mounting: Press-in PCB Mechanical mounting: screw Type of module: IGBT Technology: EconoPACK™ 3 Topology: IGBT half-bridge x2; NTC thermistor Case: AG-ECONO3-4 Max. off-state voltage: 1.2kV Anzahl je Verpackung: 1 Stücke |
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F475R06W1E3BOMA1 | INFINEON TECHNOLOGIES |
![]() Description: Module: IGBT; transistor/transistor; IGBT half-bridge x2; Ic: 75A Power dissipation: 275W Electrical mounting: Press-in PCB Mechanical mounting: screw Technology: EasyPACK™ 1B Topology: IGBT half-bridge x2; NTC thermistor Type of semiconductor module: IGBT Case: AG-EASY1B-1 Max. off-state voltage: 0.6kV Semiconductor structure: transistor/transistor Gate-emitter voltage: ±20V Collector current: 75A Pulsed collector current: 150A Anzahl je Verpackung: 1 Stücke |
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F475R12KS4BOSA1 | INFINEON TECHNOLOGIES |
![]() Description: Module: IGBT; transistor/transistor; IGBT half-bridge x2; Ic: 75A Semiconductor structure: transistor/transistor Gate-emitter voltage: ±20V Collector current: 75A Pulsed collector current: 150A Power dissipation: 500W Electrical mounting: Press-in PCB Mechanical mounting: screw Type of module: IGBT Technology: EconoPACK™ 2 Topology: IGBT half-bridge x2; NTC thermistor Case: AG-ECONO2-6 Max. off-state voltage: 1.2kV Anzahl je Verpackung: 10 Stücke |
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FB30R06W1E3BOMA1 | INFINEON TECHNOLOGIES |
![]() Description: Module: IGBT; diode/transistor; single-phase diode bridge; 115W Max. off-state voltage: 0.6kV Semiconductor structure: diode/transistor Gate-emitter voltage: ±20V Collector current: 30A Pulsed collector current: 60A Power dissipation: 115W Electrical mounting: Press-in PCB Mechanical mounting: screw Type of module: IGBT Technology: EasyPIM™ 1B Topology: IGBT three-phase bridge; NTC thermistor; single-phase diode bridge Case: AG-EASY1B-1 Anzahl je Verpackung: 1 Stücke |
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FD1000R33HE3KBPSA1 | INFINEON TECHNOLOGIES |
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FD300R06KE3HOSA1 | INFINEON TECHNOLOGIES |
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FD300R12KE3HOSA1 | INFINEON TECHNOLOGIES |
![]() Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.2kV; screw Type of semiconductor module: IGBT Semiconductor structure: diode/transistor Max. off-state voltage: 1.2kV Case: AG-62MM-1 Electrical mounting: screw Mechanical mounting: screw Application: Inverter Power dissipation: 1.47kW Topology: boost chopper Gate-emitter voltage: ±20V Collector current: 300A Pulsed collector current: 600A Anzahl je Verpackung: 1 Stücke |
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FF100R12RT4HOSA1 | INFINEON TECHNOLOGIES |
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FF200R12KE3HOSA1 | INFINEON TECHNOLOGIES |
![]() Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 200A Max. off-state voltage: 1.2kV Semiconductor structure: transistor/transistor Gate-emitter voltage: ±20V Collector current: 200A Pulsed collector current: 400A Power dissipation: 1.05kW Electrical mounting: screw Mechanical mounting: screw Topology: IGBT half-bridge Type of semiconductor module: IGBT Case: AG-62MM-1 Anzahl je Verpackung: 1 Stücke |
auf Bestellung 10 Stücke: Lieferzeit 7-14 Tag (e) |
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FF200R12KE4PHOSA1 | INFINEON TECHNOLOGIES |
![]() Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 200A Type of semiconductor module: IGBT Semiconductor structure: transistor/transistor Max. off-state voltage: 1.2kV Case: AG-62MM-1 Electrical mounting: screw Mechanical mounting: screw Topology: IGBT half-bridge Gate-emitter voltage: ±20V Collector current: 200A Pulsed collector current: 400A Anzahl je Verpackung: 1 Stücke |
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FF200R12KT3EHOSA1 | INFINEON TECHNOLOGIES |
![]() Description: Module: IGBT; transistor/transistor,common emitter; IGBT x2 Type of semiconductor module: IGBT Semiconductor structure: common emitter; transistor/transistor Max. off-state voltage: 1.2kV Case: AG-62MM-1 Electrical mounting: FASTON connectors; screw Mechanical mounting: screw Power dissipation: 1.05kW Topology: IGBT x2 Gate-emitter voltage: ±20V Collector current: 200A Pulsed collector current: 400A Anzahl je Verpackung: 1 Stücke |
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FF200R12KT4HOSA1 | INFINEON TECHNOLOGIES |
![]() Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 200A Type of semiconductor module: IGBT Semiconductor structure: transistor/transistor Max. off-state voltage: 1.2kV Case: AG-62MM-1 Electrical mounting: screw Mechanical mounting: screw Power dissipation: 1.1kW Topology: IGBT half-bridge Gate-emitter voltage: ±20V Collector current: 200A Pulsed collector current: 400A Anzahl je Verpackung: 1 Stücke |
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FF200R17KE4HOSA1 | INFINEON TECHNOLOGIES |
![]() Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 200A Max. off-state voltage: 1.7kV Semiconductor structure: transistor/transistor Gate-emitter voltage: ±20V Collector current: 200A Pulsed collector current: 400A Power dissipation: 1.25kW Electrical mounting: screw Mechanical mounting: screw Topology: IGBT half-bridge Type of semiconductor module: IGBT Case: AG-62MM-1 Anzahl je Verpackung: 1 Stücke |
auf Bestellung 3 Stücke: Lieferzeit 7-14 Tag (e) |
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FF300R06KE3 | INFINEON TECHNOLOGIES | FF300R06KE3 IGBT modules |
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FF300R12KE3 | INFINEON TECHNOLOGIES |
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FF300R12KS4 | INFINEON TECHNOLOGIES |
![]() Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 300A Type of semiconductor module: IGBT Semiconductor structure: transistor/transistor Topology: IGBT half-bridge Max. off-state voltage: 1.2kV Collector current: 300A Case: AG-62MM-1 Electrical mounting: screw Gate-emitter voltage: ±20V Pulsed collector current: 600A Power dissipation: 1.95kW Mechanical mounting: screw Anzahl je Verpackung: 1 Stücke |
auf Bestellung 6 Stücke: Lieferzeit 7-14 Tag (e) |
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FF300R12KT3EHOSA1 | INFINEON TECHNOLOGIES |
![]() Description: Module: IGBT; transistor/transistor,common emitter; IGBT x2 Type of semiconductor module: IGBT Semiconductor structure: common emitter; transistor/transistor Max. off-state voltage: 1.2kV Case: AG-62MM-1 Electrical mounting: FASTON connectors; screw Mechanical mounting: screw Power dissipation: 1.45kW Topology: IGBT x2 Gate-emitter voltage: ±20V Collector current: 300A Pulsed collector current: 600A Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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FF300R12KT4HOSA1 | INFINEON TECHNOLOGIES |
![]() Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 300A Type of semiconductor module: IGBT Semiconductor structure: transistor/transistor Max. off-state voltage: 1.2kV Case: AG-62MM-1 Electrical mounting: screw Mechanical mounting: screw Power dissipation: 1.6kW Topology: IGBT half-bridge Gate-emitter voltage: ±20V Collector current: 300A Pulsed collector current: 600A Anzahl je Verpackung: 1 Stücke |
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FF300R17ME4BOSA1 | INFINEON TECHNOLOGIES |
![]() Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 300A Gate-emitter voltage: ±20V Collector current: 300A Pulsed collector current: 600A Power dissipation: 1.8kW Electrical mounting: Press-in PCB Mechanical mounting: screw Technology: EconoDUAL™ 3 Topology: IGBT half-bridge; NTC thermistor Type of semiconductor module: IGBT Case: AG-ECONOD-3 Max. off-state voltage: 1.7kV Semiconductor structure: transistor/transistor Anzahl je Verpackung: 1 Stücke |
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FF450R06ME3 | INFINEON TECHNOLOGIES |
![]() Description: Transistor/transistor; IGBT half-bridge,NTC thermistor; 1.25kW Max. off-state voltage: 0.6kV Semiconductor structure: transistor/transistor Gate-emitter voltage: ±20V Collector current: 450A Pulsed collector current: 900A Power dissipation: 1.25kW Electrical mounting: Press-in PCB Mechanical mounting: screw Technology: EconoDUAL™ 3 Topology: IGBT half-bridge; NTC thermistor Type of semiconductor module: IGBT Case: AG-ECONOD-3 Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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FF450R12KE4HOSA1 | INFINEON TECHNOLOGIES |
![]() Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 450A Type of semiconductor module: IGBT Semiconductor structure: transistor/transistor Max. off-state voltage: 1.2kV Case: AG-62MM Electrical mounting: screw Mechanical mounting: screw Power dissipation: 2.4kW Topology: IGBT half-bridge Gate-emitter voltage: ±20V Collector current: 450A Pulsed collector current: 900A Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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FF450R12KT4HOSA1 | INFINEON TECHNOLOGIES |
![]() Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 450A Type of semiconductor module: IGBT Semiconductor structure: transistor/transistor Max. off-state voltage: 1.2kV Case: AG-62MM Electrical mounting: FASTON connectors; screw Mechanical mounting: screw Power dissipation: 2.4kW Topology: IGBT half-bridge Gate-emitter voltage: ±20V Collector current: 450A Pulsed collector current: 900A Anzahl je Verpackung: 1 Stücke |
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FF450R33T3E3B5BPSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor/transistor; IGBT half-bridge; Urmax: 3.3kV; Ic: 450A Max. off-state voltage: 3.3kV Semiconductor structure: transistor/transistor Gate-emitter voltage: ±20V Collector current: 450A Pulsed collector current: 900A Electrical mounting: screw Mechanical mounting: screw Technology: XHP™3 Topology: IGBT half-bridge Type of semiconductor module: IGBT Case: AG-XHP100-6 Anzahl je Verpackung: 1 Stücke |
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FF45MR12W1M1B11BOMA1 | INFINEON TECHNOLOGIES |
![]() Description: Module; transistor/transistor; 1.2kV; 25A; AG-EASY1BM-2; Idm: 50A Type of semiconductor module: MOSFET transistor Semiconductor structure: transistor/transistor Drain-source voltage: 1.2kV Drain current: 25A Case: AG-EASY1BM-2 Electrical mounting: Press-Fit Polarisation: unipolar On-state resistance: 45mΩ Pulsed drain current: 50A Technology: CoolSiC™; SiC Gate-source voltage: -10...20V Mechanical mounting: screw Topology: MOSFET half-bridge; NTC thermistor Anzahl je Verpackung: 1 Stücke |
auf Bestellung 1 Stücke: Lieferzeit 7-14 Tag (e) |
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FF500R17KE4BOSA1 | INFINEON TECHNOLOGIES |
![]() Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 500A Type of module: IGBT Semiconductor structure: transistor/transistor Topology: IGBT half-bridge Max. off-state voltage: 1.7kV Collector current: 500A Case: AG-62MM-1 Electrical mounting: screw Gate-emitter voltage: ±20V Pulsed collector current: 1kA Mechanical mounting: screw Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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FF900R12IE4 | INFINEON TECHNOLOGIES | FF900R12IE4 IGBT modules |
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FF900R12ME7B11BOSA1 | INFINEON TECHNOLOGIES |
![]() Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 900A Semiconductor structure: transistor/transistor Gate-emitter voltage: ±20V Collector current: 900A Pulsed collector current: 1.8kA Electrical mounting: Press-Fit; screw Mechanical mounting: screw Type of module: IGBT Technology: TRENCHSTOP™ Topology: IGBT half-bridge; NTC thermistor Case: AG-ECONOD-5 Max. off-state voltage: 1.2kV Anzahl je Verpackung: 6 Stücke |
Produkt ist nicht verfügbar |
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FM24C64B-GTR | INFINEON TECHNOLOGIES |
![]() Description: IC: FRAM memory; 64kbFRAM; I2C; 8kx8bit; 4.5÷5.5VDC; 1MHz; SOIC8 Type of integrated circuit: FRAM memory Kind of memory: FRAM Memory: 64kb FRAM Interface: I2C Memory organisation: 8kx8bit Clock frequency: 1MHz Mounting: SMD Case: SOIC8 Operating temperature: -40...85°C Kind of package: reel; tape Supply voltage: 4.5...5.5V DC Anzahl je Verpackung: 2500 Stücke |
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FM24CL16B-DG | INFINEON TECHNOLOGIES |
![]() Description: IC: FRAM memory; 16kbFRAM; I2C; 2kx8bit; 2.7÷3.65VDC; 1MHz; DFN8 Type of integrated circuit: FRAM memory Kind of memory: FRAM Memory: 16kb FRAM Interface: I2C Memory organisation: 2kx8bit Supply voltage: 2.7...3.65V DC Clock frequency: 1MHz Case: DFN8 Mounting: SMD Operating temperature: -40...85°C Anzahl je Verpackung: 1620 Stücke |
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FM24CL16B-DGTR | INFINEON TECHNOLOGIES |
![]() Description: IC: FRAM memory; 16kbFRAM; I2C; 2kx8bit; 2.7÷3.65VDC; 1MHz; DFN8 Type of integrated circuit: FRAM memory Kind of memory: FRAM Memory: 16kb FRAM Interface: I2C Memory organisation: 2kx8bit Supply voltage: 2.7...3.65V DC Clock frequency: 1MHz Case: DFN8 Mounting: SMD Operating temperature: -40...85°C Kind of package: reel; tape Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
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FM24CL64B-DGTR | INFINEON TECHNOLOGIES |
![]() Description: IC: FRAM memory; 64kbFRAM; I2C; 8kx8bit; 2.7÷3.6VDC; 1MHz; DFN8 Mounting: SMD Operating temperature: -40...85°C Memory organisation: 8kx8bit Clock frequency: 1MHz Kind of package: reel; tape Memory: 64kb FRAM Case: DFN8 Supply voltage: 2.7...3.6V DC Type of integrated circuit: FRAM memory Interface: I2C Kind of memory: FRAM Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
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FM25CL64B-DGTR | INFINEON TECHNOLOGIES |
![]() Description: IC: FRAM memory; 64kbFRAM; SPI; 8kx8bit; 2.7÷3.65VDC; 20MHz; DFN8 Mounting: SMD Operating temperature: -40...85°C Memory organisation: 8kx8bit Clock frequency: 20MHz Kind of package: reel; tape Memory: 64kb FRAM Case: DFN8 Supply voltage: 2.7...3.65V DC Type of integrated circuit: FRAM memory Interface: SPI Kind of memory: FRAM Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
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FM25L04B-DGTR | INFINEON TECHNOLOGIES |
![]() Description: IC: FRAM memory; 4kbFRAM; SPI; 512x8bit; 2.7÷3.6VDC; 20MHz; DFN8 Mounting: SMD Operating temperature: -40...85°C Memory organisation: 512x8bit Clock frequency: 20MHz Kind of package: reel; tape Memory: 4kb FRAM Case: DFN8 Supply voltage: 2.7...3.6V DC Type of integrated circuit: FRAM memory Interface: SPI Kind of memory: FRAM Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||
FM25L16B-DG | INFINEON TECHNOLOGIES |
![]() Description: IC: FRAM memory; 16kbFRAM; SPI; 2kx8bit; 2.7÷3.6VDC; 20MHz; DFN8 Mounting: SMD Operating temperature: -40...85°C Memory organisation: 2kx8bit Clock frequency: 20MHz Memory: 16kb FRAM Case: DFN8 Supply voltage: 2.7...3.6V DC Type of integrated circuit: FRAM memory Interface: SPI Kind of memory: FRAM Anzahl je Verpackung: 81 Stücke |
Produkt ist nicht verfügbar |
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FM25L16B-DGTR | INFINEON TECHNOLOGIES |
![]() Description: IC: FRAM memory; 16kbFRAM; SPI; 2kx8bit; 2.7÷3.6VDC; 20MHz; DFN8 Mounting: SMD Operating temperature: -40...85°C Memory organisation: 2kx8bit Clock frequency: 20MHz Kind of package: reel; tape Memory: 16kb FRAM Case: DFN8 Supply voltage: 2.7...3.6V DC Type of integrated circuit: FRAM memory Interface: SPI Kind of memory: FRAM Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||
FM25V05-GTR | INFINEON TECHNOLOGIES |
![]() Description: IC: FRAM memory; 512kbFRAM; SPI; 64kx8bit; 2÷3.6VDC; 40MHz; SOIC8 Mounting: SMD Operating temperature: -40...85°C Memory organisation: 64kx8bit Clock frequency: 40MHz Kind of package: reel; tape Memory: 512kb FRAM Case: SOIC8 Supply voltage: 2...3.6V DC Type of integrated circuit: FRAM memory Interface: SPI Kind of memory: FRAM Anzahl je Verpackung: 2500 Stücke |
Produkt ist nicht verfügbar |
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FM25V10-DG | INFINEON TECHNOLOGIES |
![]() Description: IC: FRAM memory; 1MbFRAM; SPI; 128kx8bit; 2÷3.6VDC; 40MHz; DFN8 Mounting: SMD Operating temperature: -40...85°C Memory organisation: 128kx8bit Clock frequency: 40MHz Memory: 1Mb FRAM Case: DFN8 Supply voltage: 2...3.6V DC Type of integrated circuit: FRAM memory Interface: SPI Kind of memory: FRAM Anzahl je Verpackung: 370 Stücke |
Produkt ist nicht verfügbar |
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FM25VN10-GTR | INFINEON TECHNOLOGIES |
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FP06R12W1T4B3BOMA1 | INFINEON TECHNOLOGIES |
![]() Description: Module: IGBT; diode/transistor; three-phase diode bridge; Ic: 6A Power dissipation: 94W Electrical mounting: Press-in PCB Mechanical mounting: screw Technology: EasyPIM™ 1B Topology: IGBT three-phase bridge; NTC thermistor; three-phase diode bridge Type of semiconductor module: IGBT Case: AG-EASY1B-1 Max. off-state voltage: 1.2kV Semiconductor structure: diode/transistor Gate-emitter voltage: ±20V Collector current: 6A Pulsed collector current: 12A Anzahl je Verpackung: 1 Stücke |
auf Bestellung 1 Stücke: Lieferzeit 7-14 Tag (e) |
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FP100R12KT4B11BOSA1 | INFINEON TECHNOLOGIES |
![]() Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 1.2kV; 515W Semiconductor structure: diode/transistor Gate-emitter voltage: ±20V Collector current: 100A Pulsed collector current: 200A Power dissipation: 515W Electrical mounting: Press-in PCB Mechanical mounting: screw Type of module: IGBT Technology: EconoPIM™ 3 Topology: buck chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge Case: AG-ECONO3-3 Max. off-state voltage: 1.2kV Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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FP10R12W1T7B11BOMA1 | INFINEON TECHNOLOGIES |
![]() Description: Diode/transistor; three-phase diode bridge; Urmax: 1.2kV; Ic: 10A Max. off-state voltage: 1.2kV Semiconductor structure: diode/transistor Gate-emitter voltage: ±20V Collector current: 10A Pulsed collector current: 20A Electrical mounting: Press-in PCB Mechanical mounting: screw Technology: EasyPIM™ 1B Topology: IGBT three-phase bridge; NTC thermistor; three-phase diode bridge Type of semiconductor module: IGBT Case: AG-EASY1B-2 Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||
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FP15R12W1T4_B3 | INFINEON TECHNOLOGIES |
![]() Description: Module: IGBT; diode/transistor; three-phase diode bridge; Ic: 15A Type of semiconductor module: IGBT Semiconductor structure: diode/transistor Topology: IGBT three-phase bridge; NTC thermistor; three-phase diode bridge Max. off-state voltage: 1.2kV Collector current: 15A Case: AG-EASY1B-1 Electrical mounting: Press-in PCB Gate-emitter voltage: ±20V Pulsed collector current: 30A Power dissipation: 130W Mechanical mounting: screw Technology: EasyPIM™ 1B Anzahl je Verpackung: 1 Stücke |
auf Bestellung 20 Stücke: Lieferzeit 7-14 Tag (e) |
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FP20R06W1E3B11BOMA1 | INFINEON TECHNOLOGIES |
![]() Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 600V; Ic: 20A Semiconductor structure: diode/transistor Gate-emitter voltage: ±20V Collector current: 20A Pulsed collector current: 40A Application: Inverter Power dissipation: 94W Electrical mounting: Press-in PCB Mechanical mounting: screw Type of module: IGBT Technology: EasyPIM™ 1B Topology: buck chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge Case: AG-EASY1B-2 Max. off-state voltage: 0.6kV Anzahl je Verpackung: 24 Stücke |
Produkt ist nicht verfügbar |
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FP25R12W1T7B11BPSA1 | INFINEON TECHNOLOGIES |
![]() Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 1.2kV; Ic: 25A Semiconductor structure: diode/transistor Gate-emitter voltage: ±20V Collector current: 25A Pulsed collector current: 50A Electrical mounting: Press-in PCB Mechanical mounting: screw Type of module: IGBT Technology: EasyPIM™ 1B Topology: buck chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge Case: AG-EASY1B-2 Max. off-state voltage: 1.2kV Anzahl je Verpackung: 1 Stücke |
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FP30R06KE3BPSA1 | INFINEON TECHNOLOGIES |
![]() Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 600V; Ic: 30A Max. off-state voltage: 0.6kV Semiconductor structure: diode/transistor Gate-emitter voltage: ±20V Collector current: 30A Pulsed collector current: 60A Application: Inverter Power dissipation: 125W Electrical mounting: Press-in PCB Mechanical mounting: screw Type of module: IGBT Technology: EconoPIM™ 2 Topology: buck chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge Case: AG-ECONO2C Anzahl je Verpackung: 1 Stücke |
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FP40R12KT3BOSA1 | INFINEON TECHNOLOGIES |
![]() Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 1.2kV; Ic: 40A Type of semiconductor module: IGBT Semiconductor structure: diode/transistor Topology: buck chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge Max. off-state voltage: 1.2kV Collector current: 40A Case: AG-ECONO2-5 Application: Inverter Electrical mounting: Press-in PCB Gate-emitter voltage: ±20V Pulsed collector current: 80A Power dissipation: 210W Technology: EconoPIM™ 2 Mechanical mounting: screw Anzahl je Verpackung: 1 Stücke |
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FP50R06W2E3B11BOMA1 | INFINEON TECHNOLOGIES |
![]() Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 600V; Ic: 50A Semiconductor structure: diode/transistor Gate-emitter voltage: ±20V Collector current: 50A Pulsed collector current: 100A Power dissipation: 175W Electrical mounting: Press-in PCB Mechanical mounting: screw Type of module: IGBT Technology: EasyPIM™ 2B Topology: buck chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge Case: AG-EASY2B-2 Max. off-state voltage: 0.6kV Anzahl je Verpackung: 1 Stücke |
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FP50R12KT3BOSA1 | INFINEON TECHNOLOGIES |
![]() Description: Diode/transistor; buck chopper,three-phase diode bridge; 280W Max. off-state voltage: 1.2kV Semiconductor structure: diode/transistor Gate-emitter voltage: ±20V Collector current: 50A Pulsed collector current: 100A Application: Inverter Power dissipation: 280W Electrical mounting: Press-in PCB Mechanical mounting: screw Technology: EconoPIM™ 2 Topology: buck chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge Type of semiconductor module: IGBT Case: AG-ECONO3-3 Anzahl je Verpackung: 1 Stücke |
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FP75R12KT4 | INFINEON TECHNOLOGIES |
![]() Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 1.2kV; Ic: 75A Type of semiconductor module: IGBT Semiconductor structure: diode/transistor Topology: buck chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge Max. off-state voltage: 1.2kV Collector current: 75A Case: AG-ECONO3-3 Application: Inverter Electrical mounting: Press-in PCB Gate-emitter voltage: ±20V Pulsed collector current: 150A Power dissipation: 385W Mechanical mounting: screw Technology: EconoPIM™ 3 Anzahl je Verpackung: 1 Stücke |
auf Bestellung 6 Stücke: Lieferzeit 7-14 Tag (e) |
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FS100R12W2T7B11BOMA1 | INFINEON TECHNOLOGIES |
![]() Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge Semiconductor structure: transistor/transistor Gate-emitter voltage: ±20V Collector current: 100A Pulsed collector current: 200A Electrical mounting: Press-in PCB Mechanical mounting: screw Type of module: IGBT Technology: EasyPACK™ 2B Topology: IGBT three-phase bridge; NTC thermistor Case: AG-EASY2B-2 Max. off-state voltage: 1.2kV Anzahl je Verpackung: 1 Stücke |
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FS10R12VT3BOMA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor/transistor; IGBT three-phase bridge; Urmax: 1.2kV Max. off-state voltage: 1.2kV Semiconductor structure: transistor/transistor Gate-emitter voltage: ±20V Collector current: 10A Pulsed collector current: 20A Power dissipation: 64W Electrical mounting: Press-in PCB Technology: EasyPACK™ Topology: IGBT three-phase bridge Type of semiconductor module: IGBT Case: AG-EASY750-1 Anzahl je Verpackung: 40 Stücke |
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FS150R12KT4BOSA1 | INFINEON TECHNOLOGIES |
![]() Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge Type of semiconductor module: IGBT Semiconductor structure: transistor/transistor Topology: IGBT three-phase bridge; NTC thermistor Max. off-state voltage: 1.2kV Collector current: 150A Case: AG-ECONO3-4 Electrical mounting: Press-in PCB Gate-emitter voltage: ±20V Pulsed collector current: 300A Power dissipation: 750W Technology: EconoPACK™ 3 Mechanical mounting: screw Anzahl je Verpackung: 1 Stücke |
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FS150R17PE4BOSA1 | INFINEON TECHNOLOGIES |
![]() Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge Collector current: 150A Gate-emitter voltage: ±20V Semiconductor structure: transistor/transistor Max. off-state voltage: 1.7kV Electrical mounting: Press-Fit; screw Mechanical mounting: screw Type of module: IGBT Technology: EconoPACK™ 4 Case: AG-ECONO4-1 Topology: IGBT three-phase bridge; NTC thermistor Pulsed collector current: 300A Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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FS15R12VT3BOMA1 | INFINEON TECHNOLOGIES |
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Produkt ist nicht verfügbar |
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ETT540N22P60HPSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: Thyristor modules
Description: Module: thyristor; double series; 2.2kV; 542A; BG-PB60ECO-1; screw
Case: BG-PB60ECO-1
Max. off-state voltage: 2.2kV
Max. forward voltage: 1.73V
Load current: 542A
Semiconductor structure: double series
Gate current: 250mA
Max. forward impulse current: 16.3kA
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Type of semiconductor module: thyristor
Anzahl je Verpackung: 1 Stücke
Category: Thyristor modules
Description: Module: thyristor; double series; 2.2kV; 542A; BG-PB60ECO-1; screw
Case: BG-PB60ECO-1
Max. off-state voltage: 2.2kV
Max. forward voltage: 1.73V
Load current: 542A
Semiconductor structure: double series
Gate current: 250mA
Max. forward impulse current: 16.3kA
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Type of semiconductor module: thyristor
Anzahl je Verpackung: 1 Stücke
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ETT580N16P60HPSA1 |
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Hersteller: INFINEON TECHNOLOGIES
ETT580N16P60HPSA1 Thyristor modules
ETT580N16P60HPSA1 Thyristor modules
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ETT630N16P60HPSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: Thyristor modules
Description: Module: thyristor; double series; 1.6kV; 635A; BG-PB60ECO-1; screw
Type of semiconductor module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.6kV
Load current: 635A
Case: BG-PB60ECO-1
Max. forward voltage: 1.37V
Max. forward impulse current: 19.8kA
Gate current: 250mA
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Anzahl je Verpackung: 1 Stücke
Category: Thyristor modules
Description: Module: thyristor; double series; 1.6kV; 635A; BG-PB60ECO-1; screw
Type of semiconductor module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.6kV
Load current: 635A
Case: BG-PB60ECO-1
Max. forward voltage: 1.37V
Max. forward impulse current: 19.8kA
Gate current: 250mA
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Anzahl je Verpackung: 1 Stücke
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EVAL-IMM101T-015TOBO1 (SP004177748) |
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Hersteller: INFINEON TECHNOLOGIES
Category: Development kits - others
Description: Dev.kit: evaluation; prototype board; Comp: IMM101T-015M; motors
Application: motors
Kit contents: prototype board
Interface: GPIO; I2C; PWM; UART
Type of development kit: evaluation
Kind of module: motor driver
Components: IMM101T-015M
Kind of connector: screw terminal x2
Anzahl je Verpackung: 1 Stücke
Category: Development kits - others
Description: Dev.kit: evaluation; prototype board; Comp: IMM101T-015M; motors
Application: motors
Kit contents: prototype board
Interface: GPIO; I2C; PWM; UART
Type of development kit: evaluation
Kind of module: motor driver
Components: IMM101T-015M
Kind of connector: screw terminal x2
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
2+ | 69.78 EUR |
EVAL-IMM101T-046TOBO1 (SP004177752) |
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Hersteller: INFINEON TECHNOLOGIES
Category: Development kits - others
Description: Dev.kit: evaluation; prototype board; Comp: IMM101T-046M; motors
Type of development kit: evaluation
Kind of module: motor driver
Components: IMM101T-046M
Kind of connector: screw terminal x2
Kit contents: prototype board
Interface: GPIO; I2C; PWM; UART
Application: motors
Anzahl je Verpackung: 1 Stücke
Category: Development kits - others
Description: Dev.kit: evaluation; prototype board; Comp: IMM101T-046M; motors
Type of development kit: evaluation
Kind of module: motor driver
Components: IMM101T-046M
Kind of connector: screw terminal x2
Kit contents: prototype board
Interface: GPIO; I2C; PWM; UART
Application: motors
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
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F3L300R07PE4 |
Hersteller: INFINEON TECHNOLOGIES
F3L300R07PE4 IGBT modules
F3L300R07PE4 IGBT modules
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F4150R12KS4BOSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge x2; 960W
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 150A
Pulsed collector current: 300A
Power dissipation: 960W
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: IGBT
Technology: EconoPACK™ 3
Topology: IGBT half-bridge x2; NTC thermistor
Case: AG-ECONO3-4
Max. off-state voltage: 1.2kV
Anzahl je Verpackung: 1 Stücke
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge x2; 960W
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 150A
Pulsed collector current: 300A
Power dissipation: 960W
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: IGBT
Technology: EconoPACK™ 3
Topology: IGBT half-bridge x2; NTC thermistor
Case: AG-ECONO3-4
Max. off-state voltage: 1.2kV
Anzahl je Verpackung: 1 Stücke
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F475R06W1E3BOMA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge x2; Ic: 75A
Power dissipation: 275W
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Technology: EasyPACK™ 1B
Topology: IGBT half-bridge x2; NTC thermistor
Type of semiconductor module: IGBT
Case: AG-EASY1B-1
Max. off-state voltage: 0.6kV
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 75A
Pulsed collector current: 150A
Anzahl je Verpackung: 1 Stücke
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge x2; Ic: 75A
Power dissipation: 275W
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Technology: EasyPACK™ 1B
Topology: IGBT half-bridge x2; NTC thermistor
Type of semiconductor module: IGBT
Case: AG-EASY1B-1
Max. off-state voltage: 0.6kV
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 75A
Pulsed collector current: 150A
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
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F475R12KS4BOSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge x2; Ic: 75A
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 75A
Pulsed collector current: 150A
Power dissipation: 500W
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: IGBT
Technology: EconoPACK™ 2
Topology: IGBT half-bridge x2; NTC thermistor
Case: AG-ECONO2-6
Max. off-state voltage: 1.2kV
Anzahl je Verpackung: 10 Stücke
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge x2; Ic: 75A
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 75A
Pulsed collector current: 150A
Power dissipation: 500W
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: IGBT
Technology: EconoPACK™ 2
Topology: IGBT half-bridge x2; NTC thermistor
Case: AG-ECONO2-6
Max. off-state voltage: 1.2kV
Anzahl je Verpackung: 10 Stücke
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FB30R06W1E3BOMA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: IGBT modules
Description: Module: IGBT; diode/transistor; single-phase diode bridge; 115W
Max. off-state voltage: 0.6kV
Semiconductor structure: diode/transistor
Gate-emitter voltage: ±20V
Collector current: 30A
Pulsed collector current: 60A
Power dissipation: 115W
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: IGBT
Technology: EasyPIM™ 1B
Topology: IGBT three-phase bridge; NTC thermistor; single-phase diode bridge
Case: AG-EASY1B-1
Anzahl je Verpackung: 1 Stücke
Category: IGBT modules
Description: Module: IGBT; diode/transistor; single-phase diode bridge; 115W
Max. off-state voltage: 0.6kV
Semiconductor structure: diode/transistor
Gate-emitter voltage: ±20V
Collector current: 30A
Pulsed collector current: 60A
Power dissipation: 115W
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: IGBT
Technology: EasyPIM™ 1B
Topology: IGBT three-phase bridge; NTC thermistor; single-phase diode bridge
Case: AG-EASY1B-1
Anzahl je Verpackung: 1 Stücke
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FD1000R33HE3KBPSA1 |
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Hersteller: INFINEON TECHNOLOGIES
FD1000R33HE3KBPSA1 IGBT modules
FD1000R33HE3KBPSA1 IGBT modules
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FD300R06KE3HOSA1 |
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Hersteller: INFINEON TECHNOLOGIES
FD300R06KE3 IGBT modules
FD300R06KE3 IGBT modules
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FD300R12KE3HOSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.2kV; screw
Type of semiconductor module: IGBT
Semiconductor structure: diode/transistor
Max. off-state voltage: 1.2kV
Case: AG-62MM-1
Electrical mounting: screw
Mechanical mounting: screw
Application: Inverter
Power dissipation: 1.47kW
Topology: boost chopper
Gate-emitter voltage: ±20V
Collector current: 300A
Pulsed collector current: 600A
Anzahl je Verpackung: 1 Stücke
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.2kV; screw
Type of semiconductor module: IGBT
Semiconductor structure: diode/transistor
Max. off-state voltage: 1.2kV
Case: AG-62MM-1
Electrical mounting: screw
Mechanical mounting: screw
Application: Inverter
Power dissipation: 1.47kW
Topology: boost chopper
Gate-emitter voltage: ±20V
Collector current: 300A
Pulsed collector current: 600A
Anzahl je Verpackung: 1 Stücke
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FF100R12RT4HOSA1 |
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Hersteller: INFINEON TECHNOLOGIES
FF100R12RT4HOSA1 IGBT modules
FF100R12RT4HOSA1 IGBT modules
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FF200R12KE3HOSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 200A
Max. off-state voltage: 1.2kV
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 200A
Pulsed collector current: 400A
Power dissipation: 1.05kW
Electrical mounting: screw
Mechanical mounting: screw
Topology: IGBT half-bridge
Type of semiconductor module: IGBT
Case: AG-62MM-1
Anzahl je Verpackung: 1 Stücke
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 200A
Max. off-state voltage: 1.2kV
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 200A
Pulsed collector current: 400A
Power dissipation: 1.05kW
Electrical mounting: screw
Mechanical mounting: screw
Topology: IGBT half-bridge
Type of semiconductor module: IGBT
Case: AG-62MM-1
Anzahl je Verpackung: 1 Stücke
auf Bestellung 10 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
1+ | 158.02 EUR |
FF200R12KE4PHOSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 200A
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Max. off-state voltage: 1.2kV
Case: AG-62MM-1
Electrical mounting: screw
Mechanical mounting: screw
Topology: IGBT half-bridge
Gate-emitter voltage: ±20V
Collector current: 200A
Pulsed collector current: 400A
Anzahl je Verpackung: 1 Stücke
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 200A
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Max. off-state voltage: 1.2kV
Case: AG-62MM-1
Electrical mounting: screw
Mechanical mounting: screw
Topology: IGBT half-bridge
Gate-emitter voltage: ±20V
Collector current: 200A
Pulsed collector current: 400A
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
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FF200R12KT3EHOSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: IGBT modules
Description: Module: IGBT; transistor/transistor,common emitter; IGBT x2
Type of semiconductor module: IGBT
Semiconductor structure: common emitter; transistor/transistor
Max. off-state voltage: 1.2kV
Case: AG-62MM-1
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Power dissipation: 1.05kW
Topology: IGBT x2
Gate-emitter voltage: ±20V
Collector current: 200A
Pulsed collector current: 400A
Anzahl je Verpackung: 1 Stücke
Category: IGBT modules
Description: Module: IGBT; transistor/transistor,common emitter; IGBT x2
Type of semiconductor module: IGBT
Semiconductor structure: common emitter; transistor/transistor
Max. off-state voltage: 1.2kV
Case: AG-62MM-1
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Power dissipation: 1.05kW
Topology: IGBT x2
Gate-emitter voltage: ±20V
Collector current: 200A
Pulsed collector current: 400A
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
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FF200R12KT4HOSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 200A
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Max. off-state voltage: 1.2kV
Case: AG-62MM-1
Electrical mounting: screw
Mechanical mounting: screw
Power dissipation: 1.1kW
Topology: IGBT half-bridge
Gate-emitter voltage: ±20V
Collector current: 200A
Pulsed collector current: 400A
Anzahl je Verpackung: 1 Stücke
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 200A
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Max. off-state voltage: 1.2kV
Case: AG-62MM-1
Electrical mounting: screw
Mechanical mounting: screw
Power dissipation: 1.1kW
Topology: IGBT half-bridge
Gate-emitter voltage: ±20V
Collector current: 200A
Pulsed collector current: 400A
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
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FF200R17KE4HOSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 200A
Max. off-state voltage: 1.7kV
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 200A
Pulsed collector current: 400A
Power dissipation: 1.25kW
Electrical mounting: screw
Mechanical mounting: screw
Topology: IGBT half-bridge
Type of semiconductor module: IGBT
Case: AG-62MM-1
Anzahl je Verpackung: 1 Stücke
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 200A
Max. off-state voltage: 1.7kV
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 200A
Pulsed collector current: 400A
Power dissipation: 1.25kW
Electrical mounting: screw
Mechanical mounting: screw
Topology: IGBT half-bridge
Type of semiconductor module: IGBT
Case: AG-62MM-1
Anzahl je Verpackung: 1 Stücke
auf Bestellung 3 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
1+ | 239.81 EUR |
FF300R06KE3 |
Hersteller: INFINEON TECHNOLOGIES
FF300R06KE3 IGBT modules
FF300R06KE3 IGBT modules
Produkt ist nicht verfügbar
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FF300R12KE3 | ![]() |
Hersteller: INFINEON TECHNOLOGIES
FF300R12KE3 IGBT modules
FF300R12KE3 IGBT modules
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FF300R12KS4 |
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Hersteller: INFINEON TECHNOLOGIES
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 300A
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT half-bridge
Max. off-state voltage: 1.2kV
Collector current: 300A
Case: AG-62MM-1
Electrical mounting: screw
Gate-emitter voltage: ±20V
Pulsed collector current: 600A
Power dissipation: 1.95kW
Mechanical mounting: screw
Anzahl je Verpackung: 1 Stücke
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 300A
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT half-bridge
Max. off-state voltage: 1.2kV
Collector current: 300A
Case: AG-62MM-1
Electrical mounting: screw
Gate-emitter voltage: ±20V
Pulsed collector current: 600A
Power dissipation: 1.95kW
Mechanical mounting: screw
Anzahl je Verpackung: 1 Stücke
auf Bestellung 6 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
1+ | 262.12 EUR |
FF300R12KT3EHOSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: IGBT modules
Description: Module: IGBT; transistor/transistor,common emitter; IGBT x2
Type of semiconductor module: IGBT
Semiconductor structure: common emitter; transistor/transistor
Max. off-state voltage: 1.2kV
Case: AG-62MM-1
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Power dissipation: 1.45kW
Topology: IGBT x2
Gate-emitter voltage: ±20V
Collector current: 300A
Pulsed collector current: 600A
Anzahl je Verpackung: 1 Stücke
Category: IGBT modules
Description: Module: IGBT; transistor/transistor,common emitter; IGBT x2
Type of semiconductor module: IGBT
Semiconductor structure: common emitter; transistor/transistor
Max. off-state voltage: 1.2kV
Case: AG-62MM-1
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Power dissipation: 1.45kW
Topology: IGBT x2
Gate-emitter voltage: ±20V
Collector current: 300A
Pulsed collector current: 600A
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
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FF300R12KT4HOSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 300A
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Max. off-state voltage: 1.2kV
Case: AG-62MM-1
Electrical mounting: screw
Mechanical mounting: screw
Power dissipation: 1.6kW
Topology: IGBT half-bridge
Gate-emitter voltage: ±20V
Collector current: 300A
Pulsed collector current: 600A
Anzahl je Verpackung: 1 Stücke
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 300A
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Max. off-state voltage: 1.2kV
Case: AG-62MM-1
Electrical mounting: screw
Mechanical mounting: screw
Power dissipation: 1.6kW
Topology: IGBT half-bridge
Gate-emitter voltage: ±20V
Collector current: 300A
Pulsed collector current: 600A
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
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FF300R17ME4BOSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 300A
Gate-emitter voltage: ±20V
Collector current: 300A
Pulsed collector current: 600A
Power dissipation: 1.8kW
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Technology: EconoDUAL™ 3
Topology: IGBT half-bridge; NTC thermistor
Type of semiconductor module: IGBT
Case: AG-ECONOD-3
Max. off-state voltage: 1.7kV
Semiconductor structure: transistor/transistor
Anzahl je Verpackung: 1 Stücke
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 300A
Gate-emitter voltage: ±20V
Collector current: 300A
Pulsed collector current: 600A
Power dissipation: 1.8kW
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Technology: EconoDUAL™ 3
Topology: IGBT half-bridge; NTC thermistor
Type of semiconductor module: IGBT
Case: AG-ECONOD-3
Max. off-state voltage: 1.7kV
Semiconductor structure: transistor/transistor
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
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FF450R06ME3 |
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Hersteller: INFINEON TECHNOLOGIES
Category: IGBT modules
Description: Transistor/transistor; IGBT half-bridge,NTC thermistor; 1.25kW
Max. off-state voltage: 0.6kV
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 450A
Pulsed collector current: 900A
Power dissipation: 1.25kW
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Technology: EconoDUAL™ 3
Topology: IGBT half-bridge; NTC thermistor
Type of semiconductor module: IGBT
Case: AG-ECONOD-3
Anzahl je Verpackung: 1 Stücke
Category: IGBT modules
Description: Transistor/transistor; IGBT half-bridge,NTC thermistor; 1.25kW
Max. off-state voltage: 0.6kV
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 450A
Pulsed collector current: 900A
Power dissipation: 1.25kW
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Technology: EconoDUAL™ 3
Topology: IGBT half-bridge; NTC thermistor
Type of semiconductor module: IGBT
Case: AG-ECONOD-3
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen
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FF450R12KE4HOSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 450A
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Max. off-state voltage: 1.2kV
Case: AG-62MM
Electrical mounting: screw
Mechanical mounting: screw
Power dissipation: 2.4kW
Topology: IGBT half-bridge
Gate-emitter voltage: ±20V
Collector current: 450A
Pulsed collector current: 900A
Anzahl je Verpackung: 1 Stücke
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 450A
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Max. off-state voltage: 1.2kV
Case: AG-62MM
Electrical mounting: screw
Mechanical mounting: screw
Power dissipation: 2.4kW
Topology: IGBT half-bridge
Gate-emitter voltage: ±20V
Collector current: 450A
Pulsed collector current: 900A
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
FF450R12KT4HOSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 450A
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Max. off-state voltage: 1.2kV
Case: AG-62MM
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Power dissipation: 2.4kW
Topology: IGBT half-bridge
Gate-emitter voltage: ±20V
Collector current: 450A
Pulsed collector current: 900A
Anzahl je Verpackung: 1 Stücke
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 450A
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Max. off-state voltage: 1.2kV
Case: AG-62MM
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Power dissipation: 2.4kW
Topology: IGBT half-bridge
Gate-emitter voltage: ±20V
Collector current: 450A
Pulsed collector current: 900A
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
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FF450R33T3E3B5BPSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: IGBT modules
Description: Transistor/transistor; IGBT half-bridge; Urmax: 3.3kV; Ic: 450A
Max. off-state voltage: 3.3kV
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 450A
Pulsed collector current: 900A
Electrical mounting: screw
Mechanical mounting: screw
Technology: XHP™3
Topology: IGBT half-bridge
Type of semiconductor module: IGBT
Case: AG-XHP100-6
Anzahl je Verpackung: 1 Stücke
Category: IGBT modules
Description: Transistor/transistor; IGBT half-bridge; Urmax: 3.3kV; Ic: 450A
Max. off-state voltage: 3.3kV
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 450A
Pulsed collector current: 900A
Electrical mounting: screw
Mechanical mounting: screw
Technology: XHP™3
Topology: IGBT half-bridge
Type of semiconductor module: IGBT
Case: AG-XHP100-6
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
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FF45MR12W1M1B11BOMA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 1.2kV; 25A; AG-EASY1BM-2; Idm: 50A
Type of semiconductor module: MOSFET transistor
Semiconductor structure: transistor/transistor
Drain-source voltage: 1.2kV
Drain current: 25A
Case: AG-EASY1BM-2
Electrical mounting: Press-Fit
Polarisation: unipolar
On-state resistance: 45mΩ
Pulsed drain current: 50A
Technology: CoolSiC™; SiC
Gate-source voltage: -10...20V
Mechanical mounting: screw
Topology: MOSFET half-bridge; NTC thermistor
Anzahl je Verpackung: 1 Stücke
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 1.2kV; 25A; AG-EASY1BM-2; Idm: 50A
Type of semiconductor module: MOSFET transistor
Semiconductor structure: transistor/transistor
Drain-source voltage: 1.2kV
Drain current: 25A
Case: AG-EASY1BM-2
Electrical mounting: Press-Fit
Polarisation: unipolar
On-state resistance: 45mΩ
Pulsed drain current: 50A
Technology: CoolSiC™; SiC
Gate-source voltage: -10...20V
Mechanical mounting: screw
Topology: MOSFET half-bridge; NTC thermistor
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
1+ | 71.50 EUR |
10+ | 66.47 EUR |
FF500R17KE4BOSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 500A
Type of module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT half-bridge
Max. off-state voltage: 1.7kV
Collector current: 500A
Case: AG-62MM-1
Electrical mounting: screw
Gate-emitter voltage: ±20V
Pulsed collector current: 1kA
Mechanical mounting: screw
Anzahl je Verpackung: 1 Stücke
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 500A
Type of module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT half-bridge
Max. off-state voltage: 1.7kV
Collector current: 500A
Case: AG-62MM-1
Electrical mounting: screw
Gate-emitter voltage: ±20V
Pulsed collector current: 1kA
Mechanical mounting: screw
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen
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FF900R12IE4 |
Hersteller: INFINEON TECHNOLOGIES
FF900R12IE4 IGBT modules
FF900R12IE4 IGBT modules
Produkt ist nicht verfügbar
Im Einkaufswagen
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FF900R12ME7B11BOSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 900A
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 900A
Pulsed collector current: 1.8kA
Electrical mounting: Press-Fit; screw
Mechanical mounting: screw
Type of module: IGBT
Technology: TRENCHSTOP™
Topology: IGBT half-bridge; NTC thermistor
Case: AG-ECONOD-5
Max. off-state voltage: 1.2kV
Anzahl je Verpackung: 6 Stücke
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 900A
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 900A
Pulsed collector current: 1.8kA
Electrical mounting: Press-Fit; screw
Mechanical mounting: screw
Type of module: IGBT
Technology: TRENCHSTOP™
Topology: IGBT half-bridge; NTC thermistor
Case: AG-ECONOD-5
Max. off-state voltage: 1.2kV
Anzahl je Verpackung: 6 Stücke
Produkt ist nicht verfügbar
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FM24C64B-GTR |
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Hersteller: INFINEON TECHNOLOGIES
Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 64kbFRAM; I2C; 8kx8bit; 4.5÷5.5VDC; 1MHz; SOIC8
Type of integrated circuit: FRAM memory
Kind of memory: FRAM
Memory: 64kb FRAM
Interface: I2C
Memory organisation: 8kx8bit
Clock frequency: 1MHz
Mounting: SMD
Case: SOIC8
Operating temperature: -40...85°C
Kind of package: reel; tape
Supply voltage: 4.5...5.5V DC
Anzahl je Verpackung: 2500 Stücke
Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 64kbFRAM; I2C; 8kx8bit; 4.5÷5.5VDC; 1MHz; SOIC8
Type of integrated circuit: FRAM memory
Kind of memory: FRAM
Memory: 64kb FRAM
Interface: I2C
Memory organisation: 8kx8bit
Clock frequency: 1MHz
Mounting: SMD
Case: SOIC8
Operating temperature: -40...85°C
Kind of package: reel; tape
Supply voltage: 4.5...5.5V DC
Anzahl je Verpackung: 2500 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen
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FM24CL16B-DG |
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Hersteller: INFINEON TECHNOLOGIES
Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 16kbFRAM; I2C; 2kx8bit; 2.7÷3.65VDC; 1MHz; DFN8
Type of integrated circuit: FRAM memory
Kind of memory: FRAM
Memory: 16kb FRAM
Interface: I2C
Memory organisation: 2kx8bit
Supply voltage: 2.7...3.65V DC
Clock frequency: 1MHz
Case: DFN8
Mounting: SMD
Operating temperature: -40...85°C
Anzahl je Verpackung: 1620 Stücke
Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 16kbFRAM; I2C; 2kx8bit; 2.7÷3.65VDC; 1MHz; DFN8
Type of integrated circuit: FRAM memory
Kind of memory: FRAM
Memory: 16kb FRAM
Interface: I2C
Memory organisation: 2kx8bit
Supply voltage: 2.7...3.65V DC
Clock frequency: 1MHz
Case: DFN8
Mounting: SMD
Operating temperature: -40...85°C
Anzahl je Verpackung: 1620 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen
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FM24CL16B-DGTR |
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Hersteller: INFINEON TECHNOLOGIES
Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 16kbFRAM; I2C; 2kx8bit; 2.7÷3.65VDC; 1MHz; DFN8
Type of integrated circuit: FRAM memory
Kind of memory: FRAM
Memory: 16kb FRAM
Interface: I2C
Memory organisation: 2kx8bit
Supply voltage: 2.7...3.65V DC
Clock frequency: 1MHz
Case: DFN8
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Anzahl je Verpackung: 3000 Stücke
Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 16kbFRAM; I2C; 2kx8bit; 2.7÷3.65VDC; 1MHz; DFN8
Type of integrated circuit: FRAM memory
Kind of memory: FRAM
Memory: 16kb FRAM
Interface: I2C
Memory organisation: 2kx8bit
Supply voltage: 2.7...3.65V DC
Clock frequency: 1MHz
Case: DFN8
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
FM24CL64B-DGTR |
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Hersteller: INFINEON TECHNOLOGIES
Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 64kbFRAM; I2C; 8kx8bit; 2.7÷3.6VDC; 1MHz; DFN8
Mounting: SMD
Operating temperature: -40...85°C
Memory organisation: 8kx8bit
Clock frequency: 1MHz
Kind of package: reel; tape
Memory: 64kb FRAM
Case: DFN8
Supply voltage: 2.7...3.6V DC
Type of integrated circuit: FRAM memory
Interface: I2C
Kind of memory: FRAM
Anzahl je Verpackung: 3000 Stücke
Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 64kbFRAM; I2C; 8kx8bit; 2.7÷3.6VDC; 1MHz; DFN8
Mounting: SMD
Operating temperature: -40...85°C
Memory organisation: 8kx8bit
Clock frequency: 1MHz
Kind of package: reel; tape
Memory: 64kb FRAM
Case: DFN8
Supply voltage: 2.7...3.6V DC
Type of integrated circuit: FRAM memory
Interface: I2C
Kind of memory: FRAM
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
FM25CL64B-DGTR |
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Hersteller: INFINEON TECHNOLOGIES
Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 64kbFRAM; SPI; 8kx8bit; 2.7÷3.65VDC; 20MHz; DFN8
Mounting: SMD
Operating temperature: -40...85°C
Memory organisation: 8kx8bit
Clock frequency: 20MHz
Kind of package: reel; tape
Memory: 64kb FRAM
Case: DFN8
Supply voltage: 2.7...3.65V DC
Type of integrated circuit: FRAM memory
Interface: SPI
Kind of memory: FRAM
Anzahl je Verpackung: 3000 Stücke
Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 64kbFRAM; SPI; 8kx8bit; 2.7÷3.65VDC; 20MHz; DFN8
Mounting: SMD
Operating temperature: -40...85°C
Memory organisation: 8kx8bit
Clock frequency: 20MHz
Kind of package: reel; tape
Memory: 64kb FRAM
Case: DFN8
Supply voltage: 2.7...3.65V DC
Type of integrated circuit: FRAM memory
Interface: SPI
Kind of memory: FRAM
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
FM25L04B-DGTR |
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Hersteller: INFINEON TECHNOLOGIES
Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 4kbFRAM; SPI; 512x8bit; 2.7÷3.6VDC; 20MHz; DFN8
Mounting: SMD
Operating temperature: -40...85°C
Memory organisation: 512x8bit
Clock frequency: 20MHz
Kind of package: reel; tape
Memory: 4kb FRAM
Case: DFN8
Supply voltage: 2.7...3.6V DC
Type of integrated circuit: FRAM memory
Interface: SPI
Kind of memory: FRAM
Anzahl je Verpackung: 3000 Stücke
Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 4kbFRAM; SPI; 512x8bit; 2.7÷3.6VDC; 20MHz; DFN8
Mounting: SMD
Operating temperature: -40...85°C
Memory organisation: 512x8bit
Clock frequency: 20MHz
Kind of package: reel; tape
Memory: 4kb FRAM
Case: DFN8
Supply voltage: 2.7...3.6V DC
Type of integrated circuit: FRAM memory
Interface: SPI
Kind of memory: FRAM
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
FM25L16B-DG |
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Hersteller: INFINEON TECHNOLOGIES
Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 16kbFRAM; SPI; 2kx8bit; 2.7÷3.6VDC; 20MHz; DFN8
Mounting: SMD
Operating temperature: -40...85°C
Memory organisation: 2kx8bit
Clock frequency: 20MHz
Memory: 16kb FRAM
Case: DFN8
Supply voltage: 2.7...3.6V DC
Type of integrated circuit: FRAM memory
Interface: SPI
Kind of memory: FRAM
Anzahl je Verpackung: 81 Stücke
Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 16kbFRAM; SPI; 2kx8bit; 2.7÷3.6VDC; 20MHz; DFN8
Mounting: SMD
Operating temperature: -40...85°C
Memory organisation: 2kx8bit
Clock frequency: 20MHz
Memory: 16kb FRAM
Case: DFN8
Supply voltage: 2.7...3.6V DC
Type of integrated circuit: FRAM memory
Interface: SPI
Kind of memory: FRAM
Anzahl je Verpackung: 81 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
FM25L16B-DGTR |
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Hersteller: INFINEON TECHNOLOGIES
Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 16kbFRAM; SPI; 2kx8bit; 2.7÷3.6VDC; 20MHz; DFN8
Mounting: SMD
Operating temperature: -40...85°C
Memory organisation: 2kx8bit
Clock frequency: 20MHz
Kind of package: reel; tape
Memory: 16kb FRAM
Case: DFN8
Supply voltage: 2.7...3.6V DC
Type of integrated circuit: FRAM memory
Interface: SPI
Kind of memory: FRAM
Anzahl je Verpackung: 3000 Stücke
Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 16kbFRAM; SPI; 2kx8bit; 2.7÷3.6VDC; 20MHz; DFN8
Mounting: SMD
Operating temperature: -40...85°C
Memory organisation: 2kx8bit
Clock frequency: 20MHz
Kind of package: reel; tape
Memory: 16kb FRAM
Case: DFN8
Supply voltage: 2.7...3.6V DC
Type of integrated circuit: FRAM memory
Interface: SPI
Kind of memory: FRAM
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
FM25V05-GTR |
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Hersteller: INFINEON TECHNOLOGIES
Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 512kbFRAM; SPI; 64kx8bit; 2÷3.6VDC; 40MHz; SOIC8
Mounting: SMD
Operating temperature: -40...85°C
Memory organisation: 64kx8bit
Clock frequency: 40MHz
Kind of package: reel; tape
Memory: 512kb FRAM
Case: SOIC8
Supply voltage: 2...3.6V DC
Type of integrated circuit: FRAM memory
Interface: SPI
Kind of memory: FRAM
Anzahl je Verpackung: 2500 Stücke
Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 512kbFRAM; SPI; 64kx8bit; 2÷3.6VDC; 40MHz; SOIC8
Mounting: SMD
Operating temperature: -40...85°C
Memory organisation: 64kx8bit
Clock frequency: 40MHz
Kind of package: reel; tape
Memory: 512kb FRAM
Case: SOIC8
Supply voltage: 2...3.6V DC
Type of integrated circuit: FRAM memory
Interface: SPI
Kind of memory: FRAM
Anzahl je Verpackung: 2500 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
FM25V10-DG |
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Hersteller: INFINEON TECHNOLOGIES
Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 1MbFRAM; SPI; 128kx8bit; 2÷3.6VDC; 40MHz; DFN8
Mounting: SMD
Operating temperature: -40...85°C
Memory organisation: 128kx8bit
Clock frequency: 40MHz
Memory: 1Mb FRAM
Case: DFN8
Supply voltage: 2...3.6V DC
Type of integrated circuit: FRAM memory
Interface: SPI
Kind of memory: FRAM
Anzahl je Verpackung: 370 Stücke
Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 1MbFRAM; SPI; 128kx8bit; 2÷3.6VDC; 40MHz; DFN8
Mounting: SMD
Operating temperature: -40...85°C
Memory organisation: 128kx8bit
Clock frequency: 40MHz
Memory: 1Mb FRAM
Case: DFN8
Supply voltage: 2...3.6V DC
Type of integrated circuit: FRAM memory
Interface: SPI
Kind of memory: FRAM
Anzahl je Verpackung: 370 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
FM25VN10-GTR |
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Hersteller: INFINEON TECHNOLOGIES
FM25VN10-GTR FRAM memories - integrated circuits
FM25VN10-GTR FRAM memories - integrated circuits
Produkt ist nicht verfügbar
Im Einkaufswagen
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FP06R12W1T4B3BOMA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: IGBT modules
Description: Module: IGBT; diode/transistor; three-phase diode bridge; Ic: 6A
Power dissipation: 94W
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Technology: EasyPIM™ 1B
Topology: IGBT three-phase bridge; NTC thermistor; three-phase diode bridge
Type of semiconductor module: IGBT
Case: AG-EASY1B-1
Max. off-state voltage: 1.2kV
Semiconductor structure: diode/transistor
Gate-emitter voltage: ±20V
Collector current: 6A
Pulsed collector current: 12A
Anzahl je Verpackung: 1 Stücke
Category: IGBT modules
Description: Module: IGBT; diode/transistor; three-phase diode bridge; Ic: 6A
Power dissipation: 94W
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Technology: EasyPIM™ 1B
Topology: IGBT three-phase bridge; NTC thermistor; three-phase diode bridge
Type of semiconductor module: IGBT
Case: AG-EASY1B-1
Max. off-state voltage: 1.2kV
Semiconductor structure: diode/transistor
Gate-emitter voltage: ±20V
Collector current: 6A
Pulsed collector current: 12A
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
1+ | 71.50 EUR |
FP100R12KT4B11BOSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 1.2kV; 515W
Semiconductor structure: diode/transistor
Gate-emitter voltage: ±20V
Collector current: 100A
Pulsed collector current: 200A
Power dissipation: 515W
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: IGBT
Technology: EconoPIM™ 3
Topology: buck chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge
Case: AG-ECONO3-3
Max. off-state voltage: 1.2kV
Anzahl je Verpackung: 1 Stücke
Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 1.2kV; 515W
Semiconductor structure: diode/transistor
Gate-emitter voltage: ±20V
Collector current: 100A
Pulsed collector current: 200A
Power dissipation: 515W
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: IGBT
Technology: EconoPIM™ 3
Topology: buck chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge
Case: AG-ECONO3-3
Max. off-state voltage: 1.2kV
Anzahl je Verpackung: 1 Stücke
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FP10R12W1T7B11BOMA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: IGBT modules
Description: Diode/transistor; three-phase diode bridge; Urmax: 1.2kV; Ic: 10A
Max. off-state voltage: 1.2kV
Semiconductor structure: diode/transistor
Gate-emitter voltage: ±20V
Collector current: 10A
Pulsed collector current: 20A
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Technology: EasyPIM™ 1B
Topology: IGBT three-phase bridge; NTC thermistor; three-phase diode bridge
Type of semiconductor module: IGBT
Case: AG-EASY1B-2
Anzahl je Verpackung: 1 Stücke
Category: IGBT modules
Description: Diode/transistor; three-phase diode bridge; Urmax: 1.2kV; Ic: 10A
Max. off-state voltage: 1.2kV
Semiconductor structure: diode/transistor
Gate-emitter voltage: ±20V
Collector current: 10A
Pulsed collector current: 20A
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Technology: EasyPIM™ 1B
Topology: IGBT three-phase bridge; NTC thermistor; three-phase diode bridge
Type of semiconductor module: IGBT
Case: AG-EASY1B-2
Anzahl je Verpackung: 1 Stücke
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FP15R12W1T4_B3 |
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Hersteller: INFINEON TECHNOLOGIES
Category: IGBT modules
Description: Module: IGBT; diode/transistor; three-phase diode bridge; Ic: 15A
Type of semiconductor module: IGBT
Semiconductor structure: diode/transistor
Topology: IGBT three-phase bridge; NTC thermistor; three-phase diode bridge
Max. off-state voltage: 1.2kV
Collector current: 15A
Case: AG-EASY1B-1
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 30A
Power dissipation: 130W
Mechanical mounting: screw
Technology: EasyPIM™ 1B
Anzahl je Verpackung: 1 Stücke
Category: IGBT modules
Description: Module: IGBT; diode/transistor; three-phase diode bridge; Ic: 15A
Type of semiconductor module: IGBT
Semiconductor structure: diode/transistor
Topology: IGBT three-phase bridge; NTC thermistor; three-phase diode bridge
Max. off-state voltage: 1.2kV
Collector current: 15A
Case: AG-EASY1B-1
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 30A
Power dissipation: 130W
Mechanical mounting: screw
Technology: EasyPIM™ 1B
Anzahl je Verpackung: 1 Stücke
auf Bestellung 20 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
2+ | 44.62 EUR |
FP20R06W1E3B11BOMA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 600V; Ic: 20A
Semiconductor structure: diode/transistor
Gate-emitter voltage: ±20V
Collector current: 20A
Pulsed collector current: 40A
Application: Inverter
Power dissipation: 94W
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: IGBT
Technology: EasyPIM™ 1B
Topology: buck chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge
Case: AG-EASY1B-2
Max. off-state voltage: 0.6kV
Anzahl je Verpackung: 24 Stücke
Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 600V; Ic: 20A
Semiconductor structure: diode/transistor
Gate-emitter voltage: ±20V
Collector current: 20A
Pulsed collector current: 40A
Application: Inverter
Power dissipation: 94W
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: IGBT
Technology: EasyPIM™ 1B
Topology: buck chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge
Case: AG-EASY1B-2
Max. off-state voltage: 0.6kV
Anzahl je Verpackung: 24 Stücke
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FP25R12W1T7B11BPSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 1.2kV; Ic: 25A
Semiconductor structure: diode/transistor
Gate-emitter voltage: ±20V
Collector current: 25A
Pulsed collector current: 50A
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: IGBT
Technology: EasyPIM™ 1B
Topology: buck chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge
Case: AG-EASY1B-2
Max. off-state voltage: 1.2kV
Anzahl je Verpackung: 1 Stücke
Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 1.2kV; Ic: 25A
Semiconductor structure: diode/transistor
Gate-emitter voltage: ±20V
Collector current: 25A
Pulsed collector current: 50A
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: IGBT
Technology: EasyPIM™ 1B
Topology: buck chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge
Case: AG-EASY1B-2
Max. off-state voltage: 1.2kV
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
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FP30R06KE3BPSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 600V; Ic: 30A
Max. off-state voltage: 0.6kV
Semiconductor structure: diode/transistor
Gate-emitter voltage: ±20V
Collector current: 30A
Pulsed collector current: 60A
Application: Inverter
Power dissipation: 125W
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: IGBT
Technology: EconoPIM™ 2
Topology: buck chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge
Case: AG-ECONO2C
Anzahl je Verpackung: 1 Stücke
Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 600V; Ic: 30A
Max. off-state voltage: 0.6kV
Semiconductor structure: diode/transistor
Gate-emitter voltage: ±20V
Collector current: 30A
Pulsed collector current: 60A
Application: Inverter
Power dissipation: 125W
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: IGBT
Technology: EconoPIM™ 2
Topology: buck chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge
Case: AG-ECONO2C
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
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FP40R12KT3BOSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 1.2kV; Ic: 40A
Type of semiconductor module: IGBT
Semiconductor structure: diode/transistor
Topology: buck chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge
Max. off-state voltage: 1.2kV
Collector current: 40A
Case: AG-ECONO2-5
Application: Inverter
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 80A
Power dissipation: 210W
Technology: EconoPIM™ 2
Mechanical mounting: screw
Anzahl je Verpackung: 1 Stücke
Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 1.2kV; Ic: 40A
Type of semiconductor module: IGBT
Semiconductor structure: diode/transistor
Topology: buck chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge
Max. off-state voltage: 1.2kV
Collector current: 40A
Case: AG-ECONO2-5
Application: Inverter
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 80A
Power dissipation: 210W
Technology: EconoPIM™ 2
Mechanical mounting: screw
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
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FP50R06W2E3B11BOMA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 600V; Ic: 50A
Semiconductor structure: diode/transistor
Gate-emitter voltage: ±20V
Collector current: 50A
Pulsed collector current: 100A
Power dissipation: 175W
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: IGBT
Technology: EasyPIM™ 2B
Topology: buck chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge
Case: AG-EASY2B-2
Max. off-state voltage: 0.6kV
Anzahl je Verpackung: 1 Stücke
Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 600V; Ic: 50A
Semiconductor structure: diode/transistor
Gate-emitter voltage: ±20V
Collector current: 50A
Pulsed collector current: 100A
Power dissipation: 175W
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: IGBT
Technology: EasyPIM™ 2B
Topology: buck chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge
Case: AG-EASY2B-2
Max. off-state voltage: 0.6kV
Anzahl je Verpackung: 1 Stücke
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FP50R12KT3BOSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: IGBT modules
Description: Diode/transistor; buck chopper,three-phase diode bridge; 280W
Max. off-state voltage: 1.2kV
Semiconductor structure: diode/transistor
Gate-emitter voltage: ±20V
Collector current: 50A
Pulsed collector current: 100A
Application: Inverter
Power dissipation: 280W
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Technology: EconoPIM™ 2
Topology: buck chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge
Type of semiconductor module: IGBT
Case: AG-ECONO3-3
Anzahl je Verpackung: 1 Stücke
Category: IGBT modules
Description: Diode/transistor; buck chopper,three-phase diode bridge; 280W
Max. off-state voltage: 1.2kV
Semiconductor structure: diode/transistor
Gate-emitter voltage: ±20V
Collector current: 50A
Pulsed collector current: 100A
Application: Inverter
Power dissipation: 280W
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Technology: EconoPIM™ 2
Topology: buck chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge
Type of semiconductor module: IGBT
Case: AG-ECONO3-3
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
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FP75R12KT4 |
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Hersteller: INFINEON TECHNOLOGIES
Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 1.2kV; Ic: 75A
Type of semiconductor module: IGBT
Semiconductor structure: diode/transistor
Topology: buck chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge
Max. off-state voltage: 1.2kV
Collector current: 75A
Case: AG-ECONO3-3
Application: Inverter
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 150A
Power dissipation: 385W
Mechanical mounting: screw
Technology: EconoPIM™ 3
Anzahl je Verpackung: 1 Stücke
Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 1.2kV; Ic: 75A
Type of semiconductor module: IGBT
Semiconductor structure: diode/transistor
Topology: buck chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge
Max. off-state voltage: 1.2kV
Collector current: 75A
Case: AG-ECONO3-3
Application: Inverter
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 150A
Power dissipation: 385W
Mechanical mounting: screw
Technology: EconoPIM™ 3
Anzahl je Verpackung: 1 Stücke
auf Bestellung 6 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
1+ | 278.85 EUR |
FS100R12W2T7B11BOMA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 100A
Pulsed collector current: 200A
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: IGBT
Technology: EasyPACK™ 2B
Topology: IGBT three-phase bridge; NTC thermistor
Case: AG-EASY2B-2
Max. off-state voltage: 1.2kV
Anzahl je Verpackung: 1 Stücke
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 100A
Pulsed collector current: 200A
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: IGBT
Technology: EasyPACK™ 2B
Topology: IGBT three-phase bridge; NTC thermistor
Case: AG-EASY2B-2
Max. off-state voltage: 1.2kV
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
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FS10R12VT3BOMA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: IGBT modules
Description: Transistor/transistor; IGBT three-phase bridge; Urmax: 1.2kV
Max. off-state voltage: 1.2kV
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 10A
Pulsed collector current: 20A
Power dissipation: 64W
Electrical mounting: Press-in PCB
Technology: EasyPACK™
Topology: IGBT three-phase bridge
Type of semiconductor module: IGBT
Case: AG-EASY750-1
Anzahl je Verpackung: 40 Stücke
Category: IGBT modules
Description: Transistor/transistor; IGBT three-phase bridge; Urmax: 1.2kV
Max. off-state voltage: 1.2kV
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 10A
Pulsed collector current: 20A
Power dissipation: 64W
Electrical mounting: Press-in PCB
Technology: EasyPACK™
Topology: IGBT three-phase bridge
Type of semiconductor module: IGBT
Case: AG-EASY750-1
Anzahl je Verpackung: 40 Stücke
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FS150R12KT4BOSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT three-phase bridge; NTC thermistor
Max. off-state voltage: 1.2kV
Collector current: 150A
Case: AG-ECONO3-4
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 300A
Power dissipation: 750W
Technology: EconoPACK™ 3
Mechanical mounting: screw
Anzahl je Verpackung: 1 Stücke
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT three-phase bridge; NTC thermistor
Max. off-state voltage: 1.2kV
Collector current: 150A
Case: AG-ECONO3-4
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 300A
Power dissipation: 750W
Technology: EconoPACK™ 3
Mechanical mounting: screw
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
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FS150R17PE4BOSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Collector current: 150A
Gate-emitter voltage: ±20V
Semiconductor structure: transistor/transistor
Max. off-state voltage: 1.7kV
Electrical mounting: Press-Fit; screw
Mechanical mounting: screw
Type of module: IGBT
Technology: EconoPACK™ 4
Case: AG-ECONO4-1
Topology: IGBT three-phase bridge; NTC thermistor
Pulsed collector current: 300A
Anzahl je Verpackung: 1 Stücke
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Collector current: 150A
Gate-emitter voltage: ±20V
Semiconductor structure: transistor/transistor
Max. off-state voltage: 1.7kV
Electrical mounting: Press-Fit; screw
Mechanical mounting: screw
Type of module: IGBT
Technology: EconoPACK™ 4
Case: AG-ECONO4-1
Topology: IGBT three-phase bridge; NTC thermistor
Pulsed collector current: 300A
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
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FS15R12VT3BOMA1 |
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Hersteller: INFINEON TECHNOLOGIES
FS15R12VT3 IGBT modules
FS15R12VT3 IGBT modules
Produkt ist nicht verfügbar
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