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IKFW60N60DH3EXKSA1 IKFW60N60DH3EXKSA1 INFINEON TECHNOLOGIES IKFW60N60DH3E.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 44A; 104W; PG-TO247-3-AI
Type of transistor: IGBT
Technology: TRENCHSTOP™
Power dissipation: 104W
Case: PG-TO247-3-AI
Mounting: THT
Gate charge: 0.21µC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Gate-emitter voltage: ±20V
Collector current: 44A
Pulsed collector current: 150A
Turn-on time: 62ns
Turn-off time: 189ns
Collector-emitter voltage: 600V
Anzahl je Verpackung: 1 Stücke
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IKFW60N60EH3XKSA1 INFINEON TECHNOLOGIES Infineon-IKFW60N60EH3-DS-v02_01-EN.pdf?fileId=5546d46262b31d2e0163016e787232af Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 50A; 164W; TO247-3
Type of transistor: IGBT
Technology: TRENCHSTOP™
Power dissipation: 164W
Case: TO247-3
Mounting: THT
Gate charge: 290nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Gate-emitter voltage: ±20V
Collector current: 50A
Pulsed collector current: 200A
Turn-on time: 64ns
Turn-off time: 253ns
Collector-emitter voltage: 600V
Anzahl je Verpackung: 1 Stücke
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IKFW90N60EH3XKSA1 INFINEON TECHNOLOGIES Infineon-IKFW90N60EH3-DS-v02_01-EN.pdf?fileId=5546d46262b31d2e0163016e976f32b5 IKFW90N60EH3XKSA1 THT IGBT transistors
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IKP04N60TXKSA1 IKP04N60TXKSA1 INFINEON TECHNOLOGIES IKP04N60T.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 4A; 42W; TO220-3
Type of transistor: IGBT
Power dissipation: 42W
Case: TO220-3
Mounting: THT
Gate charge: 27nC
Kind of package: tube
Collector-emitter voltage: 600V
Features of semiconductor devices: integrated anti-parallel diode
Technology: TRENCHSTOP™
Collector current: 4A
Pulsed collector current: 12A
Turn-on time: 21ns
Turn-off time: 207ns
Gate-emitter voltage: ±20V
Anzahl je Verpackung: 1 Stücke
auf Bestellung 129 Stücke:
Lieferzeit 7-14 Tag (e)
28+2.57 EUR
43+1.69 EUR
57+1.27 EUR
60+1.20 EUR
500+1.16 EUR
Mindestbestellmenge: 28
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IKP06N60TXKSA1 IKP06N60TXKSA1 INFINEON TECHNOLOGIES IKP06N60T.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 6A; 88W; TO220-3
Type of transistor: IGBT
Technology: TRENCHSTOP™
Power dissipation: 88W
Case: TO220-3
Mounting: THT
Gate charge: 42nC
Kind of package: tube
Gate-emitter voltage: ±20V
Features of semiconductor devices: integrated anti-parallel diode
Turn-off time: 188ns
Turn-on time: 15ns
Pulsed collector current: 18A
Collector-emitter voltage: 600V
Collector current: 6A
Anzahl je Verpackung: 1 Stücke
auf Bestellung 146 Stücke:
Lieferzeit 7-14 Tag (e)
37+1.96 EUR
42+1.73 EUR
61+1.19 EUR
65+1.12 EUR
500+1.07 EUR
Mindestbestellmenge: 37
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IKP08N65H5XKSA1 IKP08N65H5XKSA1 INFINEON TECHNOLOGIES IKP08N65H5-DTE.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 18A; 70W; TO220-3; H5
Type of transistor: IGBT
Technology: TRENCHSTOP™ 5
Power dissipation: 70W
Case: TO220-3
Mounting: THT
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Gate charge: 22nC
Manufacturer series: H5
Gate-emitter voltage: ±20V
Collector-emitter voltage: 650V
Collector current: 18A
Pulsed collector current: 24A
Anzahl je Verpackung: 1 Stücke
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IKP10N60TXKSA1 IKP10N60TXKSA1 INFINEON TECHNOLOGIES IKP10N60T.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 10A; 110W; TO220AB
Type of transistor: IGBT
Power dissipation: 110W
Case: TO220AB
Mounting: THT
Gate charge: 62nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Gate-emitter voltage: ±20V
Collector-emitter voltage: 600V
Collector current: 10A
Pulsed collector current: 30A
Anzahl je Verpackung: 1 Stücke
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IKP15N60TXKSA1 IKP15N60TXKSA1 INFINEON TECHNOLOGIES IKP15N60T-DTE.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 15A; 130W; TO220-3
Type of transistor: IGBT
Technology: TRENCHSTOP™
Power dissipation: 130W
Case: TO220-3
Mounting: THT
Gate charge: 87nC
Kind of package: tube
Collector-emitter voltage: 600V
Features of semiconductor devices: integrated anti-parallel diode
Gate-emitter voltage: ±20V
Collector current: 15A
Pulsed collector current: 45A
Anzahl je Verpackung: 1 Stücke
auf Bestellung 199 Stücke:
Lieferzeit 7-14 Tag (e)
30+2.45 EUR
37+1.96 EUR
48+1.52 EUR
50+1.43 EUR
500+1.42 EUR
Mindestbestellmenge: 30
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IKP15N65F5XKSA1 IKP15N65F5XKSA1 INFINEON TECHNOLOGIES IKP15N65F5.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 18A; 52.5W; TO220-3; H5
Type of transistor: IGBT
Technology: TRENCHSTOP™ 5
Case: TO220-3
Mounting: THT
Kind of package: tube
Power dissipation: 52.5W
Features of semiconductor devices: integrated anti-parallel diode
Gate charge: 38nC
Manufacturer series: H5
Collector-emitter voltage: 650V
Gate-emitter voltage: ±20V
Collector current: 18A
Pulsed collector current: 45A
Turn-on time: 24ns
Turn-off time: 166ns
Anzahl je Verpackung: 1 Stücke
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IKP15N65H5XKSA1 IKP15N65H5XKSA1 INFINEON TECHNOLOGIES IKP15N65H5-DTE.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 15A; 105W; TO220-3; H5
Type of transistor: IGBT
Case: TO220-3
Mounting: THT
Kind of package: tube
Power dissipation: 105W
Features of semiconductor devices: integrated anti-parallel diode
Gate charge: 38nC
Manufacturer series: H5
Collector-emitter voltage: 650V
Gate-emitter voltage: ±20V
Collector current: 15A
Pulsed collector current: 45A
Anzahl je Verpackung: 1 Stücke
auf Bestellung 72 Stücke:
Lieferzeit 7-14 Tag (e)
19+3.96 EUR
38+1.90 EUR
40+1.80 EUR
250+1.73 EUR
Mindestbestellmenge: 19
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IKP20N60H3XKSA1 IKP20N60H3XKSA1 INFINEON TECHNOLOGIES IKP20N60H3-DTE.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 20A; 85W; TO220-3; H3
Type of transistor: IGBT
Technology: TRENCHSTOP™ 3
Power dissipation: 85W
Case: TO220-3
Mounting: THT
Kind of package: tube
Gate charge: 0.12µC
Manufacturer series: H3
Collector-emitter voltage: 600V
Gate-emitter voltage: ±20V
Collector current: 20A
Pulsed collector current: 80A
Turn-on time: 31ns
Turn-off time: 241ns
Features of semiconductor devices: integrated anti-parallel diode
Anzahl je Verpackung: 1 Stücke
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IKP20N60TXKSA1 IKP20N60TXKSA1 INFINEON TECHNOLOGIES IKP20N60T.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 20A; 166W; TO220-3
Type of transistor: IGBT
Technology: TRENCHSTOP™
Power dissipation: 166W
Case: TO220-3
Mounting: THT
Kind of package: tube
Gate charge: 0.12µC
Collector-emitter voltage: 600V
Gate-emitter voltage: ±20V
Collector current: 20A
Pulsed collector current: 60A
Turn-on time: 36ns
Turn-off time: 299ns
Features of semiconductor devices: integrated anti-parallel diode
Anzahl je Verpackung: 1 Stücke
auf Bestellung 63 Stücke:
Lieferzeit 7-14 Tag (e)
24+3.03 EUR
32+2.25 EUR
34+2.12 EUR
100+2.04 EUR
Mindestbestellmenge: 24
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IKP20N65F5XKSA1 IKP20N65F5XKSA1 INFINEON TECHNOLOGIES IKP20N65F5.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 21A; 63W; TO220-3
Type of transistor: IGBT
Technology: TRENCHSTOP™ 5
Power dissipation: 63W
Case: TO220-3
Mounting: THT
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Gate charge: 48nC
Collector-emitter voltage: 650V
Gate-emitter voltage: ±20V
Collector current: 21A
Pulsed collector current: 60A
Turn-on time: 21ns
Turn-off time: 200ns
Anzahl je Verpackung: 1 Stücke
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IKP20N65H5XKSA1 IKP20N65H5XKSA1 INFINEON TECHNOLOGIES IKP20N65H5-DTE.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 20A; 125W; TO220-3; H5
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 20A
Power dissipation: 125W
Case: TO220-3
Gate-emitter voltage: ±20V
Pulsed collector current: 60A
Mounting: THT
Gate charge: 48nC
Kind of package: tube
Manufacturer series: H5
Features of semiconductor devices: integrated anti-parallel diode
Anzahl je Verpackung: 1 Stücke
auf Bestellung 77 Stücke:
Lieferzeit 7-14 Tag (e)
25+2.92 EUR
27+2.72 EUR
32+2.25 EUR
34+2.12 EUR
Mindestbestellmenge: 25
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IKP30N65F5XKSA1 INFINEON TECHNOLOGIES Infineon-IKP30N65F5-DS-v02_02-EN.pdf?fileId=5546d461464245d30146a51147116d12 IKP30N65F5XKSA1 THT IGBT transistors
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IKP30N65H5XKSA1 INFINEON TECHNOLOGIES Infineon-IKP30N65H5-DS-v02_02-EN.pdf?fileId=5546d461464245d30146a51a2ca36d28 IKP30N65H5 THT IGBT transistors
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IKP40N65F5XKSA1 IKP40N65F5XKSA1 INFINEON TECHNOLOGIES IKP40N65F5-DTE.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 46A; 255W; TO220-3; F5
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 46A
Power dissipation: 255W
Case: TO220-3
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Mounting: THT
Gate charge: 95nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Manufacturer series: F5
Technology: TRENCHSTOP™ 5
Anzahl je Verpackung: 1 Stücke
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IKP40N65H5XKSA1 IKP40N65H5XKSA1 INFINEON TECHNOLOGIES IKP40N65H5-DTE.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 46A; 255W; TO220-3; H5
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 46A
Power dissipation: 255W
Case: TO220-3
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Mounting: THT
Gate charge: 95nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Manufacturer series: H5
Technology: TRENCHSTOP™ 5
Anzahl je Verpackung: 1 Stücke
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IKQ100N60TXKSA1 INFINEON TECHNOLOGIES Infineon-IKQ100N60T-DS-v02_02-EN.pdf?fileId=5546d46249cd10140149d2278ce24df2 IKQ100N60TXKSA1 THT IGBT transistors
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IKQ120N60TXKSA1 INFINEON TECHNOLOGIES IKQ120N60T.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 120A; 833W; PG-TO247-3-46
Type of transistor: IGBT
Technology: TRENCHSTOP™
Power dissipation: 833W
Case: PG-TO247-3-46
Mounting: THT
Kind of package: tube
Gate charge: 703nC
Collector-emitter voltage: 600V
Gate-emitter voltage: ±20V
Collector current: 120A
Pulsed collector current: 480A
Turn-on time: 76ns
Turn-off time: 343ns
Features of semiconductor devices: integrated anti-parallel diode
Anzahl je Verpackung: 1 Stücke
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IKQ120N60TAXKSA1 IKQ120N60TAXKSA1 INFINEON TECHNOLOGIES IKQ120N60TA.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 120A; 833W; TO247-3
Type of transistor: IGBT
Technology: TRENCHSTOP™
Power dissipation: 833W
Case: TO247-3
Mounting: THT
Kind of package: tube
Gate charge: 772nC
Collector-emitter voltage: 600V
Gate-emitter voltage: ±20V
Collector current: 120A
Pulsed collector current: 480A
Turn-on time: 76ns
Turn-off time: 343ns
Features of semiconductor devices: integrated anti-parallel diode
Anzahl je Verpackung: 1 Stücke
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IKQ40N120CH3XKSA1 IKQ40N120CH3XKSA1 INFINEON TECHNOLOGIES IKQ40N120CH3.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 40A; 136W; TO247-3; H3
Type of transistor: IGBT
Power dissipation: 136W
Case: TO247-3
Mounting: THT
Kind of package: tube
Turn-on time: 76ns
Pulsed collector current: 40A
Collector-emitter voltage: 1.2kV
Features of semiconductor devices: integrated anti-parallel diode
Collector current: 40A
Manufacturer series: H3
Turn-off time: 331ns
Gate-emitter voltage: ±20V
Anzahl je Verpackung: 1 Stücke
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IKQ40N120CT2XKSA1 IKQ40N120CT2XKSA1 INFINEON TECHNOLOGIES IKQ40N120CT2.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 40A; 133W; TO247-3
Type of transistor: IGBT
Power dissipation: 133W
Case: TO247-3
Mounting: THT
Kind of package: tube
Turn-on time: 75ns
Pulsed collector current: 40A
Collector-emitter voltage: 1.2kV
Features of semiconductor devices: integrated anti-parallel diode
Collector current: 40A
Technology: TRENCHSTOP™ 2
Turn-off time: 379ns
Gate-emitter voltage: ±20V
Anzahl je Verpackung: 1 Stücke
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IKQ50N120CH3XKSA1 IKQ50N120CH3XKSA1 INFINEON TECHNOLOGIES IKQ50N120CH3.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 50A; 173W; TO247-3; H3
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 50A
Power dissipation: 173W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Mounting: THT
Gate charge: 235nC
Kind of package: tube
Manufacturer series: H3
Features of semiconductor devices: integrated anti-parallel diode
Anzahl je Verpackung: 1 Stücke
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IKQ50N120CT2XKSA1 INFINEON TECHNOLOGIES Infineon-IKQ50N120CT2-DS-v02_01-EN.pdf?fileId=5546d4625bd71aa0015c0be00a1b0a7a IKQ50N120CT2 THT IGBT transistors
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IKQ75N120CH3XKSA1 IKQ75N120CH3XKSA1 INFINEON TECHNOLOGIES IKQ75N120CH3.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 75A; 256W; TO247-3; H3
Mounting: THT
Manufacturer series: H3
Type of transistor: IGBT
Power dissipation: 256W
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Gate charge: 0.37µC
Case: TO247-3
Collector-emitter voltage: 1.2kV
Gate-emitter voltage: ±20V
Collector current: 75A
Pulsed collector current: 300A
Anzahl je Verpackung: 1 Stücke
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IKQ75N120CS6XKSA1 IKQ75N120CS6XKSA1 INFINEON TECHNOLOGIES IKQ75N120CS6XKSA1.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 75A; 440W; PG-TO247-3-46
Mounting: THT
Type of transistor: IGBT
Power dissipation: 440W
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Gate charge: 530nC
Technology: TRENCHSTOP™ 6
Case: PG-TO247-3-46
Collector-emitter voltage: 1.2kV
Gate-emitter voltage: ±20V
Collector current: 75A
Pulsed collector current: 300A
Anzahl je Verpackung: 1 Stücke
auf Bestellung 43 Stücke:
Lieferzeit 7-14 Tag (e)
6+12.20 EUR
9+8.15 EUR
10+7.71 EUR
1020+7.39 EUR
Mindestbestellmenge: 6
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IKQ75N120CT2XKSA1 IKQ75N120CT2XKSA1 INFINEON TECHNOLOGIES IKQ75N120CT2.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 75A; 237W; TO247-3
Mounting: THT
Type of transistor: IGBT
Power dissipation: 237W
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Gate charge: 0.37µC
Technology: TRENCHSTOP™ 2
Case: TO247-3
Collector-emitter voltage: 1.2kV
Gate-emitter voltage: ±20V
Collector current: 75A
Pulsed collector current: 300A
Anzahl je Verpackung: 1 Stücke
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IKW08N120CS7XKSA1 INFINEON TECHNOLOGIES Infineon-IKW08N120CS7-DataSheet-v01_00-EN.pdf?fileId=5546d46278d64ffd0178f97dbfdd05a9 IKW08N120CS7XKSA1 THT IGBT transistors
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IKW08T120FKSA1 IKW08T120FKSA1 INFINEON TECHNOLOGIES IKW08T120_Rev2_3.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a304412b407950112b42893233e29 Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 8A; 70W; TO247-3
Collector current: 8A
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 24A
Technology: TRENCHSTOP™
Features of semiconductor devices: integrated anti-parallel diode
Mounting: THT
Collector-emitter voltage: 1.2kV
Turn-on time: 63ns
Turn-off time: 520ns
Type of transistor: IGBT
Power dissipation: 70W
Kind of package: tube
Gate charge: 53nC
Anzahl je Verpackung: 1 Stücke
auf Bestellung 58 Stücke:
Lieferzeit 7-14 Tag (e)
23+3.17 EUR
31+2.35 EUR
33+2.22 EUR
120+2.16 EUR
240+2.13 EUR
Mindestbestellmenge: 23
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IKW15N120BH6XKSA1 IKW15N120BH6XKSA1 INFINEON TECHNOLOGIES IKW15N120BH6.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 15A; 100W; TO247-3
Collector-emitter voltage: 1.2kV
Gate-emitter voltage: ±20V
Collector current: 15A
Pulsed collector current: 60A
Type of transistor: IGBT
Power dissipation: 100W
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Gate charge: 92nC
Technology: TRENCHSTOP™ 6
Mounting: THT
Case: TO247-3
Anzahl je Verpackung: 1 Stücke
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IKW15N120H3FKSA1 IKW15N120H3FKSA1 INFINEON TECHNOLOGIES IKW15N120H3-DTE.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 30A; 217W; TO247-3; H3
Case: TO247-3
Mounting: THT
Manufacturer series: H3
Collector-emitter voltage: 1.2kV
Gate-emitter voltage: ±20V
Collector current: 30A
Pulsed collector current: 60A
Type of transistor: IGBT
Power dissipation: 217W
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Gate charge: 75nC
Technology: TRENCHSTOP™ 3
Anzahl je Verpackung: 1 Stücke
auf Bestellung 230 Stücke:
Lieferzeit 7-14 Tag (e)
10+7.69 EUR
16+4.62 EUR
17+4.38 EUR
60+4.20 EUR
Mindestbestellmenge: 10
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IKW15N120T2FKSA1 IKW15N120T2FKSA1 INFINEON TECHNOLOGIES IKW15N120T2_Rev2_1.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a304412b407950112b426d2d43acd Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 30A; 235W; TO247-3
Mounting: THT
Pulsed collector current: 60A
Turn-on time: 57ns
Turn-off time: 457ns
Type of transistor: IGBT
Power dissipation: 235W
Collector-emitter voltage: 1.2kV
Features of semiconductor devices: integrated anti-parallel diode
Gate charge: 93nC
Technology: TRENCHSTOP™ 2
Case: TO247-3
Kind of package: tube
Gate-emitter voltage: ±20V
Collector current: 30A
Anzahl je Verpackung: 1 Stücke
auf Bestellung 48 Stücke:
Lieferzeit 7-14 Tag (e)
10+7.68 EUR
17+4.29 EUR
18+4.05 EUR
120+3.90 EUR
Mindestbestellmenge: 10
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IKW20N60H3FKSA1 IKW20N60H3FKSA1 INFINEON TECHNOLOGIES IKW20N60H3.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 20A; 85W; TO247-3
Type of transistor: IGBT
Technology: TRENCHSTOP™
Power dissipation: 85W
Case: TO247-3
Mounting: THT
Kind of package: tube
Gate charge: 0.12µC
Collector-emitter voltage: 600V
Gate-emitter voltage: ±20V
Collector current: 20A
Pulsed collector current: 80A
Turn-on time: 28ns
Turn-off time: 205ns
Features of semiconductor devices: integrated anti-parallel diode
Anzahl je Verpackung: 1 Stücke
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IKW20N60TFKSA1 IKW20N60TFKSA1 INFINEON TECHNOLOGIES IKW20N60T.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 20A; 166W; TO247-3
Type of transistor: IGBT
Technology: TRENCHSTOP™
Collector-emitter voltage: 600V
Collector current: 20A
Power dissipation: 166W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 60A
Mounting: THT
Gate charge: 0.12µC
Kind of package: tube
Turn-on time: 36ns
Turn-off time: 299ns
Features of semiconductor devices: integrated anti-parallel diode
Anzahl je Verpackung: 1 Stücke
auf Bestellung 148 Stücke:
Lieferzeit 7-14 Tag (e)
13+5.62 EUR
24+3.05 EUR
25+2.89 EUR
60+2.86 EUR
120+2.77 EUR
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IKW25N120CS7XKSA1 INFINEON TECHNOLOGIES Infineon-IKW25N120CS7-DataSheet-v01_00-EN.pdf?fileId=5546d46278d64ffd0178f97da3d005a3 Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 37A; 125W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 37A
Power dissipation: 125W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 75A
Mounting: THT
Gate charge: 150nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Technology: TRENCHSTOP™
Turn-on time: 38ns
Turn-off time: 490ns
Anzahl je Verpackung: 1 Stücke
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IKW25N120H3FKSA1 IKW25N120H3FKSA1 INFINEON TECHNOLOGIES IKW25N120H3-DTE.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 50A; 326W; TO247-3; H3
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 50A
Power dissipation: 326W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 100A
Mounting: THT
Gate charge: 115nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Technology: TRENCHSTOP™ 3
Manufacturer series: H3
Anzahl je Verpackung: 1 Stücke
auf Bestellung 221 Stücke:
Lieferzeit 7-14 Tag (e)
8+9.11 EUR
12+5.99 EUR
13+5.68 EUR
60+5.48 EUR
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IKW25N120T2FKSA1 IKW25N120T2FKSA1 INFINEON TECHNOLOGIES IKW25N120T2.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 50A; 349W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 50A
Power dissipation: 349W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 100A
Mounting: THT
Gate charge: 0.12µC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Anzahl je Verpackung: 1 Stücke
auf Bestellung 236 Stücke:
Lieferzeit 7-14 Tag (e)
8+9.64 EUR
13+5.81 EUR
14+5.49 EUR
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IKW25T120FKSA1 IKW25T120FKSA1 INFINEON TECHNOLOGIES IKW25T120.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 50A; 190W; TO247-3
Collector current: 50A
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 75A
Features of semiconductor devices: integrated anti-parallel diode
Mounting: THT
Collector-emitter voltage: 1.2kV
Type of transistor: IGBT
Power dissipation: 190W
Kind of package: tube
Gate charge: 155nC
Anzahl je Verpackung: 1 Stücke
auf Bestellung 56 Stücke:
Lieferzeit 7-14 Tag (e)
11+6.92 EUR
12+6.33 EUR
15+4.96 EUR
16+4.69 EUR
120+4.62 EUR
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IKW30N60H3FKSA1 IKW30N60H3FKSA1 INFINEON TECHNOLOGIES IKW30N60H3.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 30A; 94W; TO247-3; H3
Type of transistor: IGBT
Case: TO247-3
Mounting: THT
Kind of package: tube
Power dissipation: 94W
Features of semiconductor devices: integrated anti-parallel diode
Gate charge: 165nC
Manufacturer series: H3
Technology: TRENCHSTOP™ 3
Collector-emitter voltage: 600V
Gate-emitter voltage: ±20V
Collector current: 30A
Pulsed collector current: 120A
Anzahl je Verpackung: 1 Stücke
auf Bestellung 119 Stücke:
Lieferzeit 7-14 Tag (e)
16+4.59 EUR
26+2.83 EUR
27+2.67 EUR
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IKW30N60TFKSA1 IKW30N60TFKSA1 INFINEON TECHNOLOGIES IKW30N60T.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 39A; TO247-3
Type of transistor: IGBT
Case: TO247-3
Mounting: THT
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Gate charge: 167nC
Technology: TRENCHSTOP™
Collector-emitter voltage: 600V
Gate-emitter voltage: ±20V
Collector current: 39A
Pulsed collector current: 90A
Turn-on time: 44ns
Turn-off time: 0.3µs
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
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IKW30N65EL5XKSA1 INFINEON TECHNOLOGIES Infineon-IKW30N65EL5-DS-v02_01-EN.pdf?fileId=5546d4624b0b249c014b11cd5d3c3acb IKW30N65EL5 THT IGBT transistors
auf Bestellung 5 Stücke:
Lieferzeit 7-14 Tag (e)
5+14.30 EUR
9+7.95 EUR
30+5.81 EUR
Mindestbestellmenge: 5
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IKW30N65ES5XKSA1 IKW30N65ES5XKSA1 INFINEON TECHNOLOGIES IKW30N65ES5.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 39.5A; TO247-3
Type of transistor: IGBT
Technology: TRENCHSTOP™ 5
Collector-emitter voltage: 650V
Collector current: 39.5A
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Mounting: THT
Gate charge: 70nC
Kind of package: tube
Turn-on time: 29ns
Turn-off time: 154ns
Features of semiconductor devices: integrated anti-parallel diode
Anzahl je Verpackung: 1 Stücke
auf Bestellung 55 Stücke:
Lieferzeit 7-14 Tag (e)
16+4.73 EUR
21+3.53 EUR
22+3.35 EUR
30+3.22 EUR
Mindestbestellmenge: 16
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IKW30N65H5XKSA1 INFINEON TECHNOLOGIES Infineon-IKW30N65H5-DS-v02_01-EN.pdf?fileId=5546d4624a0bf290014a0f6a876d6a3b IKW30N65H5 THT IGBT transistors
Produkt ist nicht verfügbar
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IKW30N65WR5XKSA1 INFINEON TECHNOLOGIES IKW30N65WR5_DS.pdf IKW30N65WR5 THT IGBT transistors
auf Bestellung 17 Stücke:
Lieferzeit 7-14 Tag (e)
14+5.35 EUR
17+4.20 EUR
30+3.82 EUR
Mindestbestellmenge: 14
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IKW40N120CS6XKSA1 IKW40N120CS6XKSA1 INFINEON TECHNOLOGIES IKW40N120CS6.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 40A; 250W; TO247-3
Type of transistor: IGBT
Power dissipation: 250W
Case: TO247-3
Mounting: THT
Gate charge: 285nC
Kind of package: tube
Pulsed collector current: 160A
Collector-emitter voltage: 1.2kV
Features of semiconductor devices: integrated anti-parallel diode
Collector current: 40A
Technology: TRENCHSTOP™ 6
Gate-emitter voltage: ±20V
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1 Stücke:
Lieferzeit 7-14 Tag (e)
1+71.50 EUR
4+17.88 EUR
10+7.15 EUR
510+4.40 EUR
1020+4.30 EUR
Im Einkaufswagen  Stück im Wert von  UAH
IKW40N120CS7XKSA1 INFINEON TECHNOLOGIES Infineon-IKW40N120CS7-DataSheet-v01_00-EN.pdf?fileId=5546d46278d64ffd0178f97d952805a0 Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 56A; 179W; TO247-3
Type of transistor: IGBT
Power dissipation: 179W
Case: TO247-3
Mounting: THT
Gate charge: 230nC
Kind of package: tube
Turn-on time: 45ns
Pulsed collector current: 120A
Collector-emitter voltage: 1.2kV
Features of semiconductor devices: integrated anti-parallel diode
Collector current: 56A
Technology: TRENCHSTOP™
Turn-off time: 0.5µs
Gate-emitter voltage: ±20V
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
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IKW40N120H3FKSA1 IKW40N120H3FKSA1 INFINEON TECHNOLOGIES IKW40N120H3-DTE.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 80A; 483W; TO247-3; H3
Type of transistor: IGBT
Power dissipation: 483W
Case: TO247-3
Mounting: THT
Gate charge: 185nC
Kind of package: tube
Pulsed collector current: 160A
Collector-emitter voltage: 1.2kV
Features of semiconductor devices: integrated anti-parallel diode
Collector current: 80A
Manufacturer series: H3
Technology: TRENCHSTOP™ 3
Gate-emitter voltage: ±20V
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
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IKW40N120T2FKSA1 IKW40N120T2FKSA1 INFINEON TECHNOLOGIES IKW40N120T2.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 40A; 480W; TO247-3
Type of transistor: IGBT
Power dissipation: 480W
Case: TO247-3
Mounting: THT
Gate charge: 192nC
Kind of package: tube
Pulsed collector current: 165A
Collector-emitter voltage: 1.2kV
Features of semiconductor devices: integrated anti-parallel diode
Collector current: 40A
Technology: TRENCHSTOP™
Gate-emitter voltage: ±20V
Anzahl je Verpackung: 1 Stücke
auf Bestellung 68 Stücke:
Lieferzeit 7-14 Tag (e)
7+10.27 EUR
10+7.44 EUR
120+7.15 EUR
Mindestbestellmenge: 7
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IKW40N60H3FKSA1 IKW40N60H3FKSA1 INFINEON TECHNOLOGIES IKW40N60H3.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 40A; 153W; TO247-3
Type of transistor: IGBT
Technology: TRENCHSTOP™
Power dissipation: 153W
Case: TO247-3
Mounting: THT
Gate charge: 223nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Gate-emitter voltage: ±20V
Collector current: 40A
Pulsed collector current: 160A
Turn-on time: 52ns
Turn-off time: 218ns
Collector-emitter voltage: 600V
Anzahl je Verpackung: 1 Stücke
auf Bestellung 7 Stücke:
Lieferzeit 7-14 Tag (e)
7+10.21 EUR
11+6.51 EUR
120+4.06 EUR
Mindestbestellmenge: 7
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IKW40N65ES5XKSA1 IKW40N65ES5XKSA1 INFINEON TECHNOLOGIES IKW40N65ES5.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 50A; 115W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 50A
Power dissipation: 115W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 160A
Mounting: THT
Gate charge: 95nC
Kind of package: tube
Turn-on time: 37ns
Turn-off time: 153ns
Features of semiconductor devices: integrated anti-parallel diode
Technology: TRENCHSTOP™ 5
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
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IKW40N65F5FKSA1 IKW40N65F5FKSA1 INFINEON TECHNOLOGIES IKW40N65F5-DTE.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 74A; 250W; TO247-3; F5
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 74A
Power dissipation: 250W
Case: TO247-3
Gate-emitter voltage: ±20V
Mounting: THT
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Manufacturer series: F5
Technology: TRENCHSTOP™ 5
Anzahl je Verpackung: 1 Stücke
auf Bestellung 40 Stücke:
Lieferzeit 7-14 Tag (e)
14+5.15 EUR
20+3.68 EUR
21+3.47 EUR
60+3.46 EUR
120+3.35 EUR
Mindestbestellmenge: 14
Im Einkaufswagen  Stück im Wert von  UAH
IKW40N65H5FKSA1 IKW40N65H5FKSA1 INFINEON TECHNOLOGIES IKW40N65H5-DTE.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 74A; 250W; TO247-3; H5
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 74A
Power dissipation: 250W
Case: TO247-3
Gate-emitter voltage: ±20V
Mounting: THT
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Manufacturer series: H5
Technology: TRENCHSTOP™ 5
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
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IKW40N65WR5XKSA1 IKW40N65WR5XKSA1 INFINEON TECHNOLOGIES IKW40N65WR5.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 40A; 115W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 40A
Power dissipation: 115W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Mounting: THT
Gate charge: 193nC
Kind of package: tube
Turn-on time: 60ns
Turn-off time: 448ns
Features of semiconductor devices: integrated anti-parallel diode
Technology: TRENCHSTOP™ 5
Anzahl je Verpackung: 1 Stücke
auf Bestellung 55 Stücke:
Lieferzeit 7-14 Tag (e)
18+4.05 EUR
20+3.65 EUR
26+2.79 EUR
28+2.63 EUR
Mindestbestellmenge: 18
Im Einkaufswagen  Stück im Wert von  UAH
IKW40T120FKSA1 IKW40T120FKSA1 INFINEON TECHNOLOGIES IKW40T120FKSA1.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 40A; 270W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 40A
Power dissipation: 270W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 105A
Mounting: THT
Gate charge: 203nC
Kind of package: tube
Turn-on time: 92ns
Turn-off time: 700ns
Features of semiconductor devices: integrated anti-parallel diode
Technology: TRENCHSTOP™
Anzahl je Verpackung: 1 Stücke
auf Bestellung 36 Stücke:
Lieferzeit 7-14 Tag (e)
10+7.21 EUR
12+5.99 EUR
13+5.66 EUR
30+5.59 EUR
120+5.45 EUR
Mindestbestellmenge: 10
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IKW50N60DTPXKSA1 IKW50N60DTPXKSA1 INFINEON TECHNOLOGIES IKW50N60DTP.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 61A; 159.6W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 61A
Power dissipation: 159.6W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 150A
Mounting: THT
Gate charge: 249nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Technology: TRENCHSTOP™
Turn-on time: 50ns
Turn-off time: 233ns
Anzahl je Verpackung: 1 Stücke
auf Bestellung 27 Stücke:
Lieferzeit 7-14 Tag (e)
20+3.60 EUR
27+2.65 EUR
2010+2.26 EUR
Mindestbestellmenge: 20
Im Einkaufswagen  Stück im Wert von  UAH
IKW50N60H3FKSA1 IKW50N60H3FKSA1 INFINEON TECHNOLOGIES IKW50N60H3.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 50A; 167W; TO247-3; H3
Type of transistor: IGBT
Technology: TRENCHSTOP™ 3
Power dissipation: 167W
Case: TO247-3
Mounting: THT
Gate charge: 315nC
Kind of package: tube
Turn-off time: 297ns
Features of semiconductor devices: integrated anti-parallel diode
Manufacturer series: H3
Collector-emitter voltage: 600V
Gate-emitter voltage: ±20V
Collector current: 50A
Pulsed collector current: 200A
Turn-on time: 54ns
Anzahl je Verpackung: 1 Stücke
auf Bestellung 221 Stücke:
Lieferzeit 7-14 Tag (e)
11+6.61 EUR
14+5.12 EUR
15+4.83 EUR
120+4.76 EUR
480+4.65 EUR
Mindestbestellmenge: 11
Im Einkaufswagen  Stück im Wert von  UAH
IKW50N60TFKSA1 IKW50N60TFKSA1 INFINEON TECHNOLOGIES IKW50N60T-dte.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 50A; 333W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 50A
Power dissipation: 333W
Case: TO247-3
Gate-emitter voltage: ±20V
Mounting: THT
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Technology: TRENCHSTOP™
Anzahl je Verpackung: 1 Stücke
auf Bestellung 202 Stücke:
Lieferzeit 7-14 Tag (e)
9+8.84 EUR
13+5.58 EUR
30+5.46 EUR
120+5.36 EUR
Mindestbestellmenge: 9
Im Einkaufswagen  Stück im Wert von  UAH
IKW50N65EH5XKSA1 IKW50N65EH5XKSA1 INFINEON TECHNOLOGIES IKW50N65EH5.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 50A; 138W; TO247-3; H5
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 50A
Power dissipation: 138W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Mounting: THT
Gate charge: 0.12µC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Manufacturer series: H5
Technology: TRENCHSTOP™ 5
Turn-on time: 54ns
Turn-off time: 207ns
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IKW50N65ES5XKSA1 IKW50N65ES5XKSA1 INFINEON TECHNOLOGIES IKW50N65ES5.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 60.5A; 137W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 60.5A
Power dissipation: 137W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Mounting: THT
Gate charge: 0.12µC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Technology: TRENCHSTOP™ 5
Turn-on time: 47ns
Turn-off time: 161ns
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
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IKFW60N60DH3EXKSA1 IKFW60N60DH3E.pdf
IKFW60N60DH3EXKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 44A; 104W; PG-TO247-3-AI
Type of transistor: IGBT
Technology: TRENCHSTOP™
Power dissipation: 104W
Case: PG-TO247-3-AI
Mounting: THT
Gate charge: 0.21µC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Gate-emitter voltage: ±20V
Collector current: 44A
Pulsed collector current: 150A
Turn-on time: 62ns
Turn-off time: 189ns
Collector-emitter voltage: 600V
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IKFW60N60EH3XKSA1 Infineon-IKFW60N60EH3-DS-v02_01-EN.pdf?fileId=5546d46262b31d2e0163016e787232af
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 50A; 164W; TO247-3
Type of transistor: IGBT
Technology: TRENCHSTOP™
Power dissipation: 164W
Case: TO247-3
Mounting: THT
Gate charge: 290nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Gate-emitter voltage: ±20V
Collector current: 50A
Pulsed collector current: 200A
Turn-on time: 64ns
Turn-off time: 253ns
Collector-emitter voltage: 600V
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IKFW90N60EH3XKSA1 Infineon-IKFW90N60EH3-DS-v02_01-EN.pdf?fileId=5546d46262b31d2e0163016e976f32b5
Hersteller: INFINEON TECHNOLOGIES
IKFW90N60EH3XKSA1 THT IGBT transistors
Produkt ist nicht verfügbar
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IKP04N60TXKSA1 IKP04N60T.pdf
IKP04N60TXKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 4A; 42W; TO220-3
Type of transistor: IGBT
Power dissipation: 42W
Case: TO220-3
Mounting: THT
Gate charge: 27nC
Kind of package: tube
Collector-emitter voltage: 600V
Features of semiconductor devices: integrated anti-parallel diode
Technology: TRENCHSTOP™
Collector current: 4A
Pulsed collector current: 12A
Turn-on time: 21ns
Turn-off time: 207ns
Gate-emitter voltage: ±20V
Anzahl je Verpackung: 1 Stücke
auf Bestellung 129 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
28+2.57 EUR
43+1.69 EUR
57+1.27 EUR
60+1.20 EUR
500+1.16 EUR
Mindestbestellmenge: 28
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IKP06N60TXKSA1 IKP06N60T.pdf
IKP06N60TXKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 6A; 88W; TO220-3
Type of transistor: IGBT
Technology: TRENCHSTOP™
Power dissipation: 88W
Case: TO220-3
Mounting: THT
Gate charge: 42nC
Kind of package: tube
Gate-emitter voltage: ±20V
Features of semiconductor devices: integrated anti-parallel diode
Turn-off time: 188ns
Turn-on time: 15ns
Pulsed collector current: 18A
Collector-emitter voltage: 600V
Collector current: 6A
Anzahl je Verpackung: 1 Stücke
auf Bestellung 146 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
37+1.96 EUR
42+1.73 EUR
61+1.19 EUR
65+1.12 EUR
500+1.07 EUR
Mindestbestellmenge: 37
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IKP08N65H5XKSA1 IKP08N65H5-DTE.pdf
IKP08N65H5XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 18A; 70W; TO220-3; H5
Type of transistor: IGBT
Technology: TRENCHSTOP™ 5
Power dissipation: 70W
Case: TO220-3
Mounting: THT
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Gate charge: 22nC
Manufacturer series: H5
Gate-emitter voltage: ±20V
Collector-emitter voltage: 650V
Collector current: 18A
Pulsed collector current: 24A
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
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IKP10N60TXKSA1 IKP10N60T.pdf
IKP10N60TXKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 10A; 110W; TO220AB
Type of transistor: IGBT
Power dissipation: 110W
Case: TO220AB
Mounting: THT
Gate charge: 62nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Gate-emitter voltage: ±20V
Collector-emitter voltage: 600V
Collector current: 10A
Pulsed collector current: 30A
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
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IKP15N60TXKSA1 IKP15N60T-DTE.pdf
IKP15N60TXKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 15A; 130W; TO220-3
Type of transistor: IGBT
Technology: TRENCHSTOP™
Power dissipation: 130W
Case: TO220-3
Mounting: THT
Gate charge: 87nC
Kind of package: tube
Collector-emitter voltage: 600V
Features of semiconductor devices: integrated anti-parallel diode
Gate-emitter voltage: ±20V
Collector current: 15A
Pulsed collector current: 45A
Anzahl je Verpackung: 1 Stücke
auf Bestellung 199 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
30+2.45 EUR
37+1.96 EUR
48+1.52 EUR
50+1.43 EUR
500+1.42 EUR
Mindestbestellmenge: 30
Im Einkaufswagen  Stück im Wert von  UAH
IKP15N65F5XKSA1 IKP15N65F5.pdf
IKP15N65F5XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 18A; 52.5W; TO220-3; H5
Type of transistor: IGBT
Technology: TRENCHSTOP™ 5
Case: TO220-3
Mounting: THT
Kind of package: tube
Power dissipation: 52.5W
Features of semiconductor devices: integrated anti-parallel diode
Gate charge: 38nC
Manufacturer series: H5
Collector-emitter voltage: 650V
Gate-emitter voltage: ±20V
Collector current: 18A
Pulsed collector current: 45A
Turn-on time: 24ns
Turn-off time: 166ns
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
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IKP15N65H5XKSA1 IKP15N65H5-DTE.pdf
IKP15N65H5XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 15A; 105W; TO220-3; H5
Type of transistor: IGBT
Case: TO220-3
Mounting: THT
Kind of package: tube
Power dissipation: 105W
Features of semiconductor devices: integrated anti-parallel diode
Gate charge: 38nC
Manufacturer series: H5
Collector-emitter voltage: 650V
Gate-emitter voltage: ±20V
Collector current: 15A
Pulsed collector current: 45A
Anzahl je Verpackung: 1 Stücke
auf Bestellung 72 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
19+3.96 EUR
38+1.90 EUR
40+1.80 EUR
250+1.73 EUR
Mindestbestellmenge: 19
Im Einkaufswagen  Stück im Wert von  UAH
IKP20N60H3XKSA1 IKP20N60H3-DTE.pdf
IKP20N60H3XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 20A; 85W; TO220-3; H3
Type of transistor: IGBT
Technology: TRENCHSTOP™ 3
Power dissipation: 85W
Case: TO220-3
Mounting: THT
Kind of package: tube
Gate charge: 0.12µC
Manufacturer series: H3
Collector-emitter voltage: 600V
Gate-emitter voltage: ±20V
Collector current: 20A
Pulsed collector current: 80A
Turn-on time: 31ns
Turn-off time: 241ns
Features of semiconductor devices: integrated anti-parallel diode
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IKP20N60TXKSA1 IKP20N60T.pdf
IKP20N60TXKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 20A; 166W; TO220-3
Type of transistor: IGBT
Technology: TRENCHSTOP™
Power dissipation: 166W
Case: TO220-3
Mounting: THT
Kind of package: tube
Gate charge: 0.12µC
Collector-emitter voltage: 600V
Gate-emitter voltage: ±20V
Collector current: 20A
Pulsed collector current: 60A
Turn-on time: 36ns
Turn-off time: 299ns
Features of semiconductor devices: integrated anti-parallel diode
Anzahl je Verpackung: 1 Stücke
auf Bestellung 63 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
24+3.03 EUR
32+2.25 EUR
34+2.12 EUR
100+2.04 EUR
Mindestbestellmenge: 24
Im Einkaufswagen  Stück im Wert von  UAH
IKP20N65F5XKSA1 IKP20N65F5.pdf
IKP20N65F5XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 21A; 63W; TO220-3
Type of transistor: IGBT
Technology: TRENCHSTOP™ 5
Power dissipation: 63W
Case: TO220-3
Mounting: THT
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Gate charge: 48nC
Collector-emitter voltage: 650V
Gate-emitter voltage: ±20V
Collector current: 21A
Pulsed collector current: 60A
Turn-on time: 21ns
Turn-off time: 200ns
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IKP20N65H5XKSA1 IKP20N65H5-DTE.pdf
IKP20N65H5XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 20A; 125W; TO220-3; H5
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 20A
Power dissipation: 125W
Case: TO220-3
Gate-emitter voltage: ±20V
Pulsed collector current: 60A
Mounting: THT
Gate charge: 48nC
Kind of package: tube
Manufacturer series: H5
Features of semiconductor devices: integrated anti-parallel diode
Anzahl je Verpackung: 1 Stücke
auf Bestellung 77 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
25+2.92 EUR
27+2.72 EUR
32+2.25 EUR
34+2.12 EUR
Mindestbestellmenge: 25
Im Einkaufswagen  Stück im Wert von  UAH
IKP30N65F5XKSA1 Infineon-IKP30N65F5-DS-v02_02-EN.pdf?fileId=5546d461464245d30146a51147116d12
Hersteller: INFINEON TECHNOLOGIES
IKP30N65F5XKSA1 THT IGBT transistors
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IKP30N65H5XKSA1 Infineon-IKP30N65H5-DS-v02_02-EN.pdf?fileId=5546d461464245d30146a51a2ca36d28
Hersteller: INFINEON TECHNOLOGIES
IKP30N65H5 THT IGBT transistors
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IKP40N65F5XKSA1 IKP40N65F5-DTE.pdf
IKP40N65F5XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 46A; 255W; TO220-3; F5
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 46A
Power dissipation: 255W
Case: TO220-3
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Mounting: THT
Gate charge: 95nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Manufacturer series: F5
Technology: TRENCHSTOP™ 5
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IKP40N65H5XKSA1 IKP40N65H5-DTE.pdf
IKP40N65H5XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 46A; 255W; TO220-3; H5
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 46A
Power dissipation: 255W
Case: TO220-3
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Mounting: THT
Gate charge: 95nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Manufacturer series: H5
Technology: TRENCHSTOP™ 5
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
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IKQ100N60TXKSA1 Infineon-IKQ100N60T-DS-v02_02-EN.pdf?fileId=5546d46249cd10140149d2278ce24df2
Hersteller: INFINEON TECHNOLOGIES
IKQ100N60TXKSA1 THT IGBT transistors
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IKQ120N60TXKSA1 IKQ120N60T.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 120A; 833W; PG-TO247-3-46
Type of transistor: IGBT
Technology: TRENCHSTOP™
Power dissipation: 833W
Case: PG-TO247-3-46
Mounting: THT
Kind of package: tube
Gate charge: 703nC
Collector-emitter voltage: 600V
Gate-emitter voltage: ±20V
Collector current: 120A
Pulsed collector current: 480A
Turn-on time: 76ns
Turn-off time: 343ns
Features of semiconductor devices: integrated anti-parallel diode
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
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IKQ120N60TAXKSA1 IKQ120N60TA.pdf
IKQ120N60TAXKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 120A; 833W; TO247-3
Type of transistor: IGBT
Technology: TRENCHSTOP™
Power dissipation: 833W
Case: TO247-3
Mounting: THT
Kind of package: tube
Gate charge: 772nC
Collector-emitter voltage: 600V
Gate-emitter voltage: ±20V
Collector current: 120A
Pulsed collector current: 480A
Turn-on time: 76ns
Turn-off time: 343ns
Features of semiconductor devices: integrated anti-parallel diode
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
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IKQ40N120CH3XKSA1 IKQ40N120CH3.pdf
IKQ40N120CH3XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 40A; 136W; TO247-3; H3
Type of transistor: IGBT
Power dissipation: 136W
Case: TO247-3
Mounting: THT
Kind of package: tube
Turn-on time: 76ns
Pulsed collector current: 40A
Collector-emitter voltage: 1.2kV
Features of semiconductor devices: integrated anti-parallel diode
Collector current: 40A
Manufacturer series: H3
Turn-off time: 331ns
Gate-emitter voltage: ±20V
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
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IKQ40N120CT2XKSA1 IKQ40N120CT2.pdf
IKQ40N120CT2XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 40A; 133W; TO247-3
Type of transistor: IGBT
Power dissipation: 133W
Case: TO247-3
Mounting: THT
Kind of package: tube
Turn-on time: 75ns
Pulsed collector current: 40A
Collector-emitter voltage: 1.2kV
Features of semiconductor devices: integrated anti-parallel diode
Collector current: 40A
Technology: TRENCHSTOP™ 2
Turn-off time: 379ns
Gate-emitter voltage: ±20V
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
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IKQ50N120CH3XKSA1 IKQ50N120CH3.pdf
IKQ50N120CH3XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 50A; 173W; TO247-3; H3
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 50A
Power dissipation: 173W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Mounting: THT
Gate charge: 235nC
Kind of package: tube
Manufacturer series: H3
Features of semiconductor devices: integrated anti-parallel diode
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
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IKQ50N120CT2XKSA1 Infineon-IKQ50N120CT2-DS-v02_01-EN.pdf?fileId=5546d4625bd71aa0015c0be00a1b0a7a
Hersteller: INFINEON TECHNOLOGIES
IKQ50N120CT2 THT IGBT transistors
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IKQ75N120CH3XKSA1 IKQ75N120CH3.pdf
IKQ75N120CH3XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 75A; 256W; TO247-3; H3
Mounting: THT
Manufacturer series: H3
Type of transistor: IGBT
Power dissipation: 256W
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Gate charge: 0.37µC
Case: TO247-3
Collector-emitter voltage: 1.2kV
Gate-emitter voltage: ±20V
Collector current: 75A
Pulsed collector current: 300A
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
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IKQ75N120CS6XKSA1 IKQ75N120CS6XKSA1.pdf
IKQ75N120CS6XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 75A; 440W; PG-TO247-3-46
Mounting: THT
Type of transistor: IGBT
Power dissipation: 440W
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Gate charge: 530nC
Technology: TRENCHSTOP™ 6
Case: PG-TO247-3-46
Collector-emitter voltage: 1.2kV
Gate-emitter voltage: ±20V
Collector current: 75A
Pulsed collector current: 300A
Anzahl je Verpackung: 1 Stücke
auf Bestellung 43 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
6+12.20 EUR
9+8.15 EUR
10+7.71 EUR
1020+7.39 EUR
Mindestbestellmenge: 6
Im Einkaufswagen  Stück im Wert von  UAH
IKQ75N120CT2XKSA1 IKQ75N120CT2.pdf
IKQ75N120CT2XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 75A; 237W; TO247-3
Mounting: THT
Type of transistor: IGBT
Power dissipation: 237W
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Gate charge: 0.37µC
Technology: TRENCHSTOP™ 2
Case: TO247-3
Collector-emitter voltage: 1.2kV
Gate-emitter voltage: ±20V
Collector current: 75A
Pulsed collector current: 300A
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
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IKW08N120CS7XKSA1 Infineon-IKW08N120CS7-DataSheet-v01_00-EN.pdf?fileId=5546d46278d64ffd0178f97dbfdd05a9
Hersteller: INFINEON TECHNOLOGIES
IKW08N120CS7XKSA1 THT IGBT transistors
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IKW08T120FKSA1 IKW08T120_Rev2_3.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a304412b407950112b42893233e29
IKW08T120FKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 8A; 70W; TO247-3
Collector current: 8A
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 24A
Technology: TRENCHSTOP™
Features of semiconductor devices: integrated anti-parallel diode
Mounting: THT
Collector-emitter voltage: 1.2kV
Turn-on time: 63ns
Turn-off time: 520ns
Type of transistor: IGBT
Power dissipation: 70W
Kind of package: tube
Gate charge: 53nC
Anzahl je Verpackung: 1 Stücke
auf Bestellung 58 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
23+3.17 EUR
31+2.35 EUR
33+2.22 EUR
120+2.16 EUR
240+2.13 EUR
Mindestbestellmenge: 23
Im Einkaufswagen  Stück im Wert von  UAH
IKW15N120BH6XKSA1 IKW15N120BH6.pdf
IKW15N120BH6XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 15A; 100W; TO247-3
Collector-emitter voltage: 1.2kV
Gate-emitter voltage: ±20V
Collector current: 15A
Pulsed collector current: 60A
Type of transistor: IGBT
Power dissipation: 100W
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Gate charge: 92nC
Technology: TRENCHSTOP™ 6
Mounting: THT
Case: TO247-3
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IKW15N120H3FKSA1 IKW15N120H3-DTE.pdf
IKW15N120H3FKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 30A; 217W; TO247-3; H3
Case: TO247-3
Mounting: THT
Manufacturer series: H3
Collector-emitter voltage: 1.2kV
Gate-emitter voltage: ±20V
Collector current: 30A
Pulsed collector current: 60A
Type of transistor: IGBT
Power dissipation: 217W
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Gate charge: 75nC
Technology: TRENCHSTOP™ 3
Anzahl je Verpackung: 1 Stücke
auf Bestellung 230 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
10+7.69 EUR
16+4.62 EUR
17+4.38 EUR
60+4.20 EUR
Mindestbestellmenge: 10
Im Einkaufswagen  Stück im Wert von  UAH
IKW15N120T2FKSA1 IKW15N120T2_Rev2_1.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a304412b407950112b426d2d43acd
IKW15N120T2FKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 30A; 235W; TO247-3
Mounting: THT
Pulsed collector current: 60A
Turn-on time: 57ns
Turn-off time: 457ns
Type of transistor: IGBT
Power dissipation: 235W
Collector-emitter voltage: 1.2kV
Features of semiconductor devices: integrated anti-parallel diode
Gate charge: 93nC
Technology: TRENCHSTOP™ 2
Case: TO247-3
Kind of package: tube
Gate-emitter voltage: ±20V
Collector current: 30A
Anzahl je Verpackung: 1 Stücke
auf Bestellung 48 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
10+7.68 EUR
17+4.29 EUR
18+4.05 EUR
120+3.90 EUR
Mindestbestellmenge: 10
Im Einkaufswagen  Stück im Wert von  UAH
IKW20N60H3FKSA1 IKW20N60H3.pdf
IKW20N60H3FKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 20A; 85W; TO247-3
Type of transistor: IGBT
Technology: TRENCHSTOP™
Power dissipation: 85W
Case: TO247-3
Mounting: THT
Kind of package: tube
Gate charge: 0.12µC
Collector-emitter voltage: 600V
Gate-emitter voltage: ±20V
Collector current: 20A
Pulsed collector current: 80A
Turn-on time: 28ns
Turn-off time: 205ns
Features of semiconductor devices: integrated anti-parallel diode
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IKW20N60TFKSA1 IKW20N60T.pdf
IKW20N60TFKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 20A; 166W; TO247-3
Type of transistor: IGBT
Technology: TRENCHSTOP™
Collector-emitter voltage: 600V
Collector current: 20A
Power dissipation: 166W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 60A
Mounting: THT
Gate charge: 0.12µC
Kind of package: tube
Turn-on time: 36ns
Turn-off time: 299ns
Features of semiconductor devices: integrated anti-parallel diode
Anzahl je Verpackung: 1 Stücke
auf Bestellung 148 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
13+5.62 EUR
24+3.05 EUR
25+2.89 EUR
60+2.86 EUR
120+2.77 EUR
Mindestbestellmenge: 13
Im Einkaufswagen  Stück im Wert von  UAH
IKW25N120CS7XKSA1 Infineon-IKW25N120CS7-DataSheet-v01_00-EN.pdf?fileId=5546d46278d64ffd0178f97da3d005a3
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 37A; 125W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 37A
Power dissipation: 125W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 75A
Mounting: THT
Gate charge: 150nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Technology: TRENCHSTOP™
Turn-on time: 38ns
Turn-off time: 490ns
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IKW25N120H3FKSA1 IKW25N120H3-DTE.pdf
IKW25N120H3FKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 50A; 326W; TO247-3; H3
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 50A
Power dissipation: 326W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 100A
Mounting: THT
Gate charge: 115nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Technology: TRENCHSTOP™ 3
Manufacturer series: H3
Anzahl je Verpackung: 1 Stücke
auf Bestellung 221 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
8+9.11 EUR
12+5.99 EUR
13+5.68 EUR
60+5.48 EUR
Mindestbestellmenge: 8
Im Einkaufswagen  Stück im Wert von  UAH
IKW25N120T2FKSA1 IKW25N120T2.pdf
IKW25N120T2FKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 50A; 349W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 50A
Power dissipation: 349W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 100A
Mounting: THT
Gate charge: 0.12µC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Anzahl je Verpackung: 1 Stücke
auf Bestellung 236 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
8+9.64 EUR
13+5.81 EUR
14+5.49 EUR
Mindestbestellmenge: 8
Im Einkaufswagen  Stück im Wert von  UAH
IKW25T120FKSA1 IKW25T120.pdf
IKW25T120FKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 50A; 190W; TO247-3
Collector current: 50A
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 75A
Features of semiconductor devices: integrated anti-parallel diode
Mounting: THT
Collector-emitter voltage: 1.2kV
Type of transistor: IGBT
Power dissipation: 190W
Kind of package: tube
Gate charge: 155nC
Anzahl je Verpackung: 1 Stücke
auf Bestellung 56 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
11+6.92 EUR
12+6.33 EUR
15+4.96 EUR
16+4.69 EUR
120+4.62 EUR
Mindestbestellmenge: 11
Im Einkaufswagen  Stück im Wert von  UAH
IKW30N60H3FKSA1 IKW30N60H3.pdf
IKW30N60H3FKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 30A; 94W; TO247-3; H3
Type of transistor: IGBT
Case: TO247-3
Mounting: THT
Kind of package: tube
Power dissipation: 94W
Features of semiconductor devices: integrated anti-parallel diode
Gate charge: 165nC
Manufacturer series: H3
Technology: TRENCHSTOP™ 3
Collector-emitter voltage: 600V
Gate-emitter voltage: ±20V
Collector current: 30A
Pulsed collector current: 120A
Anzahl je Verpackung: 1 Stücke
auf Bestellung 119 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
16+4.59 EUR
26+2.83 EUR
27+2.67 EUR
Mindestbestellmenge: 16
Im Einkaufswagen  Stück im Wert von  UAH
IKW30N60TFKSA1 IKW30N60T.pdf
IKW30N60TFKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 39A; TO247-3
Type of transistor: IGBT
Case: TO247-3
Mounting: THT
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Gate charge: 167nC
Technology: TRENCHSTOP™
Collector-emitter voltage: 600V
Gate-emitter voltage: ±20V
Collector current: 39A
Pulsed collector current: 90A
Turn-on time: 44ns
Turn-off time: 0.3µs
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IKW30N65EL5XKSA1 Infineon-IKW30N65EL5-DS-v02_01-EN.pdf?fileId=5546d4624b0b249c014b11cd5d3c3acb
Hersteller: INFINEON TECHNOLOGIES
IKW30N65EL5 THT IGBT transistors
auf Bestellung 5 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
5+14.30 EUR
9+7.95 EUR
30+5.81 EUR
Mindestbestellmenge: 5
Im Einkaufswagen  Stück im Wert von  UAH
IKW30N65ES5XKSA1 IKW30N65ES5.pdf
IKW30N65ES5XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 39.5A; TO247-3
Type of transistor: IGBT
Technology: TRENCHSTOP™ 5
Collector-emitter voltage: 650V
Collector current: 39.5A
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Mounting: THT
Gate charge: 70nC
Kind of package: tube
Turn-on time: 29ns
Turn-off time: 154ns
Features of semiconductor devices: integrated anti-parallel diode
Anzahl je Verpackung: 1 Stücke
auf Bestellung 55 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
16+4.73 EUR
21+3.53 EUR
22+3.35 EUR
30+3.22 EUR
Mindestbestellmenge: 16
Im Einkaufswagen  Stück im Wert von  UAH
IKW30N65H5XKSA1 Infineon-IKW30N65H5-DS-v02_01-EN.pdf?fileId=5546d4624a0bf290014a0f6a876d6a3b
Hersteller: INFINEON TECHNOLOGIES
IKW30N65H5 THT IGBT transistors
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IKW30N65WR5XKSA1 IKW30N65WR5_DS.pdf
Hersteller: INFINEON TECHNOLOGIES
IKW30N65WR5 THT IGBT transistors
auf Bestellung 17 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
14+5.35 EUR
17+4.20 EUR
30+3.82 EUR
Mindestbestellmenge: 14
Im Einkaufswagen  Stück im Wert von  UAH
IKW40N120CS6XKSA1 IKW40N120CS6.pdf
IKW40N120CS6XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 40A; 250W; TO247-3
Type of transistor: IGBT
Power dissipation: 250W
Case: TO247-3
Mounting: THT
Gate charge: 285nC
Kind of package: tube
Pulsed collector current: 160A
Collector-emitter voltage: 1.2kV
Features of semiconductor devices: integrated anti-parallel diode
Collector current: 40A
Technology: TRENCHSTOP™ 6
Gate-emitter voltage: ±20V
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
1+71.50 EUR
4+17.88 EUR
10+7.15 EUR
510+4.40 EUR
1020+4.30 EUR
Im Einkaufswagen  Stück im Wert von  UAH
IKW40N120CS7XKSA1 Infineon-IKW40N120CS7-DataSheet-v01_00-EN.pdf?fileId=5546d46278d64ffd0178f97d952805a0
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 56A; 179W; TO247-3
Type of transistor: IGBT
Power dissipation: 179W
Case: TO247-3
Mounting: THT
Gate charge: 230nC
Kind of package: tube
Turn-on time: 45ns
Pulsed collector current: 120A
Collector-emitter voltage: 1.2kV
Features of semiconductor devices: integrated anti-parallel diode
Collector current: 56A
Technology: TRENCHSTOP™
Turn-off time: 0.5µs
Gate-emitter voltage: ±20V
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IKW40N120H3FKSA1 IKW40N120H3-DTE.pdf
IKW40N120H3FKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 80A; 483W; TO247-3; H3
Type of transistor: IGBT
Power dissipation: 483W
Case: TO247-3
Mounting: THT
Gate charge: 185nC
Kind of package: tube
Pulsed collector current: 160A
Collector-emitter voltage: 1.2kV
Features of semiconductor devices: integrated anti-parallel diode
Collector current: 80A
Manufacturer series: H3
Technology: TRENCHSTOP™ 3
Gate-emitter voltage: ±20V
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IKW40N120T2FKSA1 IKW40N120T2.pdf
IKW40N120T2FKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 40A; 480W; TO247-3
Type of transistor: IGBT
Power dissipation: 480W
Case: TO247-3
Mounting: THT
Gate charge: 192nC
Kind of package: tube
Pulsed collector current: 165A
Collector-emitter voltage: 1.2kV
Features of semiconductor devices: integrated anti-parallel diode
Collector current: 40A
Technology: TRENCHSTOP™
Gate-emitter voltage: ±20V
Anzahl je Verpackung: 1 Stücke
auf Bestellung 68 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
7+10.27 EUR
10+7.44 EUR
120+7.15 EUR
Mindestbestellmenge: 7
Im Einkaufswagen  Stück im Wert von  UAH
IKW40N60H3FKSA1 IKW40N60H3.pdf
IKW40N60H3FKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 40A; 153W; TO247-3
Type of transistor: IGBT
Technology: TRENCHSTOP™
Power dissipation: 153W
Case: TO247-3
Mounting: THT
Gate charge: 223nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Gate-emitter voltage: ±20V
Collector current: 40A
Pulsed collector current: 160A
Turn-on time: 52ns
Turn-off time: 218ns
Collector-emitter voltage: 600V
Anzahl je Verpackung: 1 Stücke
auf Bestellung 7 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
7+10.21 EUR
11+6.51 EUR
120+4.06 EUR
Mindestbestellmenge: 7
Im Einkaufswagen  Stück im Wert von  UAH
IKW40N65ES5XKSA1 IKW40N65ES5.pdf
IKW40N65ES5XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 50A; 115W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 50A
Power dissipation: 115W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 160A
Mounting: THT
Gate charge: 95nC
Kind of package: tube
Turn-on time: 37ns
Turn-off time: 153ns
Features of semiconductor devices: integrated anti-parallel diode
Technology: TRENCHSTOP™ 5
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IKW40N65F5FKSA1 IKW40N65F5-DTE.pdf
IKW40N65F5FKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 74A; 250W; TO247-3; F5
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 74A
Power dissipation: 250W
Case: TO247-3
Gate-emitter voltage: ±20V
Mounting: THT
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Manufacturer series: F5
Technology: TRENCHSTOP™ 5
Anzahl je Verpackung: 1 Stücke
auf Bestellung 40 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
14+5.15 EUR
20+3.68 EUR
21+3.47 EUR
60+3.46 EUR
120+3.35 EUR
Mindestbestellmenge: 14
Im Einkaufswagen  Stück im Wert von  UAH
IKW40N65H5FKSA1 IKW40N65H5-DTE.pdf
IKW40N65H5FKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 74A; 250W; TO247-3; H5
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 74A
Power dissipation: 250W
Case: TO247-3
Gate-emitter voltage: ±20V
Mounting: THT
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Manufacturer series: H5
Technology: TRENCHSTOP™ 5
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IKW40N65WR5XKSA1 IKW40N65WR5.pdf
IKW40N65WR5XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 40A; 115W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 40A
Power dissipation: 115W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Mounting: THT
Gate charge: 193nC
Kind of package: tube
Turn-on time: 60ns
Turn-off time: 448ns
Features of semiconductor devices: integrated anti-parallel diode
Technology: TRENCHSTOP™ 5
Anzahl je Verpackung: 1 Stücke
auf Bestellung 55 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
18+4.05 EUR
20+3.65 EUR
26+2.79 EUR
28+2.63 EUR
Mindestbestellmenge: 18
Im Einkaufswagen  Stück im Wert von  UAH
IKW40T120FKSA1 IKW40T120FKSA1.pdf
IKW40T120FKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 40A; 270W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 40A
Power dissipation: 270W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 105A
Mounting: THT
Gate charge: 203nC
Kind of package: tube
Turn-on time: 92ns
Turn-off time: 700ns
Features of semiconductor devices: integrated anti-parallel diode
Technology: TRENCHSTOP™
Anzahl je Verpackung: 1 Stücke
auf Bestellung 36 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
10+7.21 EUR
12+5.99 EUR
13+5.66 EUR
30+5.59 EUR
120+5.45 EUR
Mindestbestellmenge: 10
Im Einkaufswagen  Stück im Wert von  UAH
IKW50N60DTPXKSA1 IKW50N60DTP.pdf
IKW50N60DTPXKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 61A; 159.6W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 61A
Power dissipation: 159.6W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 150A
Mounting: THT
Gate charge: 249nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Technology: TRENCHSTOP™
Turn-on time: 50ns
Turn-off time: 233ns
Anzahl je Verpackung: 1 Stücke
auf Bestellung 27 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
20+3.60 EUR
27+2.65 EUR
2010+2.26 EUR
Mindestbestellmenge: 20
Im Einkaufswagen  Stück im Wert von  UAH
IKW50N60H3FKSA1 IKW50N60H3.pdf
IKW50N60H3FKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 50A; 167W; TO247-3; H3
Type of transistor: IGBT
Technology: TRENCHSTOP™ 3
Power dissipation: 167W
Case: TO247-3
Mounting: THT
Gate charge: 315nC
Kind of package: tube
Turn-off time: 297ns
Features of semiconductor devices: integrated anti-parallel diode
Manufacturer series: H3
Collector-emitter voltage: 600V
Gate-emitter voltage: ±20V
Collector current: 50A
Pulsed collector current: 200A
Turn-on time: 54ns
Anzahl je Verpackung: 1 Stücke
auf Bestellung 221 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
11+6.61 EUR
14+5.12 EUR
15+4.83 EUR
120+4.76 EUR
480+4.65 EUR
Mindestbestellmenge: 11
Im Einkaufswagen  Stück im Wert von  UAH
IKW50N60TFKSA1 IKW50N60T-dte.pdf
IKW50N60TFKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 50A; 333W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 50A
Power dissipation: 333W
Case: TO247-3
Gate-emitter voltage: ±20V
Mounting: THT
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Technology: TRENCHSTOP™
Anzahl je Verpackung: 1 Stücke
auf Bestellung 202 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
9+8.84 EUR
13+5.58 EUR
30+5.46 EUR
120+5.36 EUR
Mindestbestellmenge: 9
Im Einkaufswagen  Stück im Wert von  UAH
IKW50N65EH5XKSA1 IKW50N65EH5.pdf
IKW50N65EH5XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 50A; 138W; TO247-3; H5
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 50A
Power dissipation: 138W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Mounting: THT
Gate charge: 0.12µC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Manufacturer series: H5
Technology: TRENCHSTOP™ 5
Turn-on time: 54ns
Turn-off time: 207ns
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IKW50N65ES5XKSA1 IKW50N65ES5.pdf
IKW50N65ES5XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 60.5A; 137W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 60.5A
Power dissipation: 137W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Mounting: THT
Gate charge: 0.12µC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Technology: TRENCHSTOP™ 5
Turn-on time: 47ns
Turn-off time: 161ns
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
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