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IHW25N120E1XKSA1 IHW25N120E1XKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB82531ED99EDC709B02919820&compId=IHW25N120E1.pdf?ci_sign=044805b42bcb3062c7f87ce990fa46fd76a11e9d Category: THT IGBT transistors
Description: Transistor: IGBT; TRENCHSTOP™ RC; 1.2kV; 25A; 92.4W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 25A
Power dissipation: 92.4W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 75A
Mounting: THT
Gate charge: 147nC
Kind of package: tube
Features of semiconductor devices: reverse conducting IGBT (RC-IGBT)
Technology: TRENCHSTOP™ RC
Turn-off time: 2004ns
Anzahl je Verpackung: 1 Stücke
auf Bestellung 167 Stücke:
Lieferzeit 7-14 Tag (e)
16+4.52 EUR
24+2.99 EUR
30+2.57 EUR
60+2.43 EUR
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IHW30N120R5XKSA1 IHW30N120R5XKSA1 INFINEON TECHNOLOGIES IHW30N120R5.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; TRENCHSTOP™ RC; 1.2kV; 30A; 165W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 30A
Power dissipation: 165W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 90A
Mounting: THT
Gate charge: 235nC
Kind of package: tube
Features of semiconductor devices: reverse conducting IGBT (RC-IGBT)
Turn-off time: 363ns
Technology: TRENCHSTOP™ RC
Anzahl je Verpackung: 1 Stücke
auf Bestellung 128 Stücke:
Lieferzeit 7-14 Tag (e)
18+3.98 EUR
25+2.86 EUR
30+2.57 EUR
120+2.49 EUR
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IHW30N135R5XKSA1 IHW30N135R5XKSA1 INFINEON TECHNOLOGIES IHW30N135R5.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 1.35kV; 30A; 165W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 1.35kV
Collector current: 30A
Power dissipation: 165W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 90A
Mounting: THT
Gate charge: 235nC
Kind of package: tube
Features of semiconductor devices: reverse conducting IGBT (RC-IGBT)
Turn-off time: 680ns
Technology: TRENCHSTOP™
Anzahl je Verpackung: 1 Stücke
auf Bestellung 122 Stücke:
Lieferzeit 7-14 Tag (e)
23+3.25 EUR
25+2.86 EUR
30+2.55 EUR
120+2.32 EUR
450+2.16 EUR
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IHW30N160R5XKSA1 IHW30N160R5XKSA1 INFINEON TECHNOLOGIES IHW30N160R5.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 1.6kV; 39A; 131.5W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 1.6kV
Collector current: 39A
Power dissipation: 131.5W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 90A
Mounting: THT
Gate charge: 205nC
Kind of package: tube
Features of semiconductor devices: reverse conducting IGBT (RC-IGBT)
Turn-off time: 411ns
Technology: TRENCHSTOP™
Anzahl je Verpackung: 1 Stücke
auf Bestellung 41 Stücke:
Lieferzeit 7-14 Tag (e)
13+5.73 EUR
15+5.06 EUR
16+4.5 EUR
30+3.76 EUR
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IHW40N120R5XKSA1 IHW40N120R5XKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB82531ED99EDCA5EF2915F820&compId=IHW40N120R5.pdf?ci_sign=ff87a8c36a7c399a49fec60936b41c23e7a4c9aa Category: THT IGBT transistors
Description: Transistor: IGBT; TRENCHSTOP™ RC; 1.2kV; 40A; 197W; TO247-3
Type of transistor: IGBT
Technology: TRENCHSTOP™ RC
Power dissipation: 197W
Case: TO247-3
Mounting: THT
Gate charge: 310nC
Kind of package: tube
Features of semiconductor devices: reverse conducting IGBT (RC-IGBT)
Collector current: 40A
Collector-emitter voltage: 1.2kV
Turn-off time: 440ns
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Anzahl je Verpackung: 1 Stücke
auf Bestellung 168 Stücke:
Lieferzeit 7-14 Tag (e)
20+3.72 EUR
23+3.19 EUR
29+2.49 EUR
32+2.3 EUR
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IHW40N135R5XKSA1 IHW40N135R5XKSA1 INFINEON TECHNOLOGIES Infineon-IHW40N135R5-DS-v02_02-EN.pdf?fileId=5546d462636cc8fb0163b0fe63f5326a Category: THT IGBT transistors
Description: Transistor: IGBT; TRENCHSTOP™ RC; 1.35kV; 40A; 197W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 1.35kV
Collector current: 40A
Power dissipation: 197W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Mounting: THT
Gate charge: 305nC
Kind of package: tube
Features of semiconductor devices: reverse conducting IGBT (RC-IGBT)
Turn-off time: 0.5µs
Technology: TRENCHSTOP™ RC
Anzahl je Verpackung: 1 Stücke
auf Bestellung 123 Stücke:
Lieferzeit 7-14 Tag (e)
15+5 EUR
17+4.45 EUR
21+3.42 EUR
24+3.09 EUR
30+3.02 EUR
Mindestbestellmenge: 15
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IHW40N65R5XKSA1 IHW40N65R5XKSA1 INFINEON TECHNOLOGIES IHW40N65R5.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 40A; 152W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 40A
Power dissipation: 152W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Mounting: THT
Gate charge: 193nC
Kind of package: tube
Turn-on time: 59ns
Turn-off time: 273ns
Features of semiconductor devices: reverse conducting IGBT (RC-IGBT)
Technology: TRENCHSTOP™ 5
Anzahl je Verpackung: 1 Stücke
auf Bestellung 45 Stücke:
Lieferzeit 7-14 Tag (e)
27+2.67 EUR
34+2.13 EUR
42+1.72 EUR
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IHW40N65R6XKSA1 IHW40N65R6XKSA1 INFINEON TECHNOLOGIES Infineon-IHW40N65R6-DataSheet-v01_20-EN.pdf?fileId=5546d46277fc7439017826e19dad7275 Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 54A; 105W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 54A
Power dissipation: 105W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Mounting: THT
Gate charge: 159nC
Kind of package: tube
Turn-on time: 36ns
Turn-off time: 256ns
Features of semiconductor devices: reverse conducting IGBT (RC-IGBT)
Anzahl je Verpackung: 1 Stücke
auf Bestellung 177 Stücke:
Lieferzeit 7-14 Tag (e)
18+4.06 EUR
27+2.69 EUR
30+2.56 EUR
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IHW50N65R5XKSA1 IHW50N65R5XKSA1 INFINEON TECHNOLOGIES IHW50N65R5.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 50A; 141W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 50A
Power dissipation: 141W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 150A
Mounting: THT
Gate charge: 230nC
Kind of package: tube
Features of semiconductor devices: reverse conducting IGBT (RC-IGBT)
Turn-on time: 50ns
Turn-off time: 218ns
Technology: TRENCHSTOP™ 5
Anzahl je Verpackung: 1 Stücke
auf Bestellung 174 Stücke:
Lieferzeit 7-14 Tag (e)
16+4.59 EUR
Mindestbestellmenge: 16
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IKA10N65ET6XKSA2 IKA10N65ET6XKSA2 INFINEON TECHNOLOGIES IKA10N65ET6.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 9A; 20W; TO220FP; T6
Type of transistor: IGBT
Technology: TRENCHSTOP™ 6
Power dissipation: 20W
Case: TO220FP
Mounting: THT
Kind of package: tube
Collector current: 9A
Gate-emitter voltage: ±20V
Pulsed collector current: 42.5A
Collector-emitter voltage: 650V
Features of semiconductor devices: integrated anti-parallel diode
Manufacturer series: T6
Gate charge: 27nC
Anzahl je Verpackung: 1 Stücke
auf Bestellung 73 Stücke:
Lieferzeit 7-14 Tag (e)
40+1.83 EUR
43+1.69 EUR
50+1.62 EUR
100+1.46 EUR
250+1.36 EUR
500+1.34 EUR
Mindestbestellmenge: 40
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IKB10N60TATMA1 IKB10N60TATMA1 INFINEON TECHNOLOGIES IKB10N60T.pdf Category: SMD IGBT transistors
Description: Transistor: IGBT; 600V; 18A; 110W; D2PAK
Type of transistor: IGBT
Technology: TRENCHSTOP™
Power dissipation: 110W
Case: D2PAK
Mounting: SMD
Kind of package: reel; tape
Gate-emitter voltage: ±20V
Pulsed collector current: 30A
Collector-emitter voltage: 600V
Features of semiconductor devices: integrated anti-parallel diode
Gate charge: 62nC
Turn-on time: 20ns
Turn-off time: 253ns
Collector current: 18A
Anzahl je Verpackung: 1 Stücke
auf Bestellung 659 Stücke:
Lieferzeit 7-14 Tag (e)
32+2.27 EUR
41+1.77 EUR
48+1.52 EUR
Mindestbestellmenge: 32
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IKB15N60TATMA1 IKB15N60TATMA1 INFINEON TECHNOLOGIES IKB15N60T.pdf Category: SMD IGBT transistors
Description: Transistor: IGBT; 600V; 23A; 130W; D2PAK
Type of transistor: IGBT
Technology: TRENCHSTOP™
Power dissipation: 130W
Case: D2PAK
Mounting: SMD
Gate charge: 87nC
Kind of package: reel; tape
Collector current: 23A
Turn-off time: 238ns
Turn-on time: 28ns
Gate-emitter voltage: ±20V
Pulsed collector current: 45A
Collector-emitter voltage: 600V
Features of semiconductor devices: integrated anti-parallel diode
Anzahl je Verpackung: 1 Stücke
auf Bestellung 762 Stücke:
Lieferzeit 7-14 Tag (e)
25+2.97 EUR
29+2.52 EUR
30+2.4 EUR
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IKB20N65EH5ATMA1 IKB20N65EH5ATMA1 INFINEON TECHNOLOGIES IKB20N65EH5.pdf Category: SMD IGBT transistors
Description: Transistor: IGBT; 650V; 25A; 62.5W; D2PAK
Type of transistor: IGBT
Technology: TRENCHSTOP™ 5
Power dissipation: 62.5W
Case: D2PAK
Mounting: SMD
Kind of package: reel; tape
Collector current: 25A
Gate-emitter voltage: ±20V
Pulsed collector current: 60A
Collector-emitter voltage: 650V
Features of semiconductor devices: integrated anti-parallel diode
Turn-on time: 40ns
Gate charge: 48nC
Turn-off time: 183ns
Anzahl je Verpackung: 1 Stücke
auf Bestellung 913 Stücke:
Lieferzeit 7-14 Tag (e)
19+3.78 EUR
27+2.66 EUR
Mindestbestellmenge: 19
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IKCM10H60GAXKMA1 IKCM10H60GAXKMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE89BACDC852B5593D7&compId=IKCM10H60GA.pdf?ci_sign=4b5a98fd60881639d3b88e907a50e2961c030923 Category: Motor and PWM drivers
Description: IC: driver; IGBT three-phase bridge,thermistor; PG-MDIP24; 20kHz
Type of integrated circuit: driver
Kind of integrated circuit: 3-phase motor controller; IPM
Case: PG-MDIP24
Output current: -10...10A
Mounting: THT
Operating temperature: -40...125°C
Power dissipation: 23.1W
Operating voltage: 13.5...18.5/0...400V DC
Voltage class: 600V
Frequency: 20kHz
Integrated circuit features: integrated bootstrap functionality
Technology: ClPOS™ Mini; TRENCHSTOP™
Topology: IGBT three-phase bridge; thermistor
Anzahl je Verpackung: 1 Stücke
auf Bestellung 44 Stücke:
Lieferzeit 7-14 Tag (e)
8+9.07 EUR
9+8.62 EUR
Mindestbestellmenge: 8
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IKCM15H60GAXKMA2 INFINEON TECHNOLOGIES Infineon-IKCM15H60GA-DS-v01_02-EN.pdf?fileId=5546d4624fb7fef2014fcb68016c78ec IKCM15H60GA Motor and PWM drivers
auf Bestellung 38 Stücke:
Lieferzeit 7-14 Tag (e)
7+10.22 EUR
10+10.2 EUR
Mindestbestellmenge: 7
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IKCM30F60GAXKMA1 IKCM30F60GAXKMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED6BCD5B09CEE67DE28&compId=IKCM30F60GA.pdf?ci_sign=783f1af8ac5ce8035a854959701563b15dac9467 Category: Motor and PWM drivers
Description: IC: driver; IGBT three-phase bridge,thermistor; PG-MDIP24; 20kHz
Type of integrated circuit: driver
Topology: IGBT three-phase bridge; thermistor
Kind of integrated circuit: 3-phase motor controller; IPM
Technology: ClPOS™ Mini; TRENCHSTOP™
Case: PG-MDIP24
Output current: -20...20A
Integrated circuit features: integrated bootstrap functionality
Mounting: THT
Operating temperature: -40...125°C
Operating voltage: 13.5...18.5/0...400V DC
Frequency: 20kHz
Voltage class: 600V
Protection: anti-overload OPP; undervoltage UVP
Power dissipation: 30.3W
Anzahl je Verpackung: 1 Stücke
auf Bestellung 13 Stücke:
Lieferzeit 7-14 Tag (e)
5+15.86 EUR
Mindestbestellmenge: 5
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IKD04N60RATMA1 IKD04N60RATMA1 INFINEON TECHNOLOGIES IKD04N60R.pdf Category: SMD IGBT transistors
Description: Transistor: IGBT; TRENCHSTOP™ RC; 600V; 4A; 75W; DPAK
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 4A
Power dissipation: 75W
Case: DPAK
Gate-emitter voltage: ±20V
Pulsed collector current: 12A
Mounting: SMD
Gate charge: 27nC
Kind of package: reel; tape
Features of semiconductor devices: integrated anti-parallel diode
Turn-off time: 317ns
Technology: TRENCHSTOP™ RC
Turn-on time: 22ns
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2479 Stücke:
Lieferzeit 7-14 Tag (e)
44+1.64 EUR
69+1.05 EUR
104+0.69 EUR
500+0.54 EUR
Mindestbestellmenge: 44
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IKD06N60RATMA1 IKD06N60RATMA1 INFINEON TECHNOLOGIES IKD06N60R.pdf Category: SMD IGBT transistors
Description: Transistor: IGBT; TRENCHSTOP™ RC; 600V; 6A; 100W; DPAK
Type of transistor: IGBT
Technology: TRENCHSTOP™ RC
Power dissipation: 100W
Case: DPAK
Mounting: SMD
Gate charge: 48nC
Kind of package: reel; tape
Collector-emitter voltage: 600V
Features of semiconductor devices: integrated anti-parallel diode
Turn-on time: 19ns
Turn-off time: 279ns
Collector current: 6A
Pulsed collector current: 18A
Gate-emitter voltage: ±20V
Anzahl je Verpackung: 1 Stücke
auf Bestellung 780 Stücke:
Lieferzeit 7-14 Tag (e)
45+1.62 EUR
70+1.03 EUR
101+0.71 EUR
Mindestbestellmenge: 45
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IKD15N60RATMA1 IKD15N60RATMA1 INFINEON TECHNOLOGIES IKD15N60R.pdf Category: SMD IGBT transistors
Description: Transistor: IGBT; TRENCHSTOP™ RC; 600V; 15A; 250W; DPAK
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 15A
Power dissipation: 250W
Case: DPAK
Gate-emitter voltage: ±20V
Pulsed collector current: 45A
Mounting: SMD
Gate charge: 90nC
Kind of package: reel; tape
Features of semiconductor devices: integrated anti-parallel diode
Turn-off time: 319ns
Technology: TRENCHSTOP™ RC
Turn-on time: 26ns
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1955 Stücke:
Lieferzeit 7-14 Tag (e)
30+2.42 EUR
38+1.92 EUR
43+1.69 EUR
51+1.42 EUR
Mindestbestellmenge: 30
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IKFW50N60DH3EXKSA1 IKFW50N60DH3EXKSA1 INFINEON TECHNOLOGIES IKFW50N60DH3E.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 37A; 95W; PG-TO247-3-AI
Type of transistor: IGBT
Technology: TRENCHSTOP™
Power dissipation: 95W
Case: PG-TO247-3-AI
Mounting: THT
Gate charge: 160nC
Kind of package: tube
Turn-on time: 60ns
Turn-off time: 192ns
Features of semiconductor devices: integrated anti-parallel diode
Gate-emitter voltage: ±20V
Collector current: 37A
Pulsed collector current: 120A
Collector-emitter voltage: 600V
Anzahl je Verpackung: 1 Stücke
auf Bestellung 6 Stücke:
Lieferzeit 7-14 Tag (e)
6+11.91 EUR
30+5.18 EUR
Mindestbestellmenge: 6
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IKP06N60TXKSA1 IKP06N60TXKSA1 INFINEON TECHNOLOGIES IKP06N60T.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 6A; 88W; TO220-3
Type of transistor: IGBT
Technology: TRENCHSTOP™
Power dissipation: 88W
Case: TO220-3
Mounting: THT
Gate charge: 42nC
Kind of package: tube
Collector-emitter voltage: 600V
Features of semiconductor devices: integrated anti-parallel diode
Turn-on time: 15ns
Turn-off time: 188ns
Collector current: 6A
Pulsed collector current: 18A
Gate-emitter voltage: ±20V
Anzahl je Verpackung: 1 Stücke
auf Bestellung 497 Stücke:
Lieferzeit 7-14 Tag (e)
36+1.99 EUR
49+1.49 EUR
64+1.13 EUR
100+1.07 EUR
Mindestbestellmenge: 36
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IKP10N60TXKSA1 IKP10N60TXKSA1 INFINEON TECHNOLOGIES IKP10N60T.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 10A; 110W; TO220AB
Type of transistor: IGBT
Power dissipation: 110W
Case: TO220AB
Mounting: THT
Kind of package: tube
Gate-emitter voltage: ±20V
Pulsed collector current: 30A
Collector-emitter voltage: 600V
Features of semiconductor devices: integrated anti-parallel diode
Gate charge: 62nC
Collector current: 10A
Anzahl je Verpackung: 1 Stücke
auf Bestellung 556 Stücke:
Lieferzeit 7-14 Tag (e)
34+2.14 EUR
46+1.59 EUR
59+1.23 EUR
100+1.1 EUR
Mindestbestellmenge: 34
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IKP15N60TXKSA1 IKP15N60TXKSA1 INFINEON TECHNOLOGIES IKP15N60T-DTE.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 15A; 130W; TO220-3
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 15A
Power dissipation: 130W
Case: TO220-3
Gate-emitter voltage: ±20V
Pulsed collector current: 45A
Mounting: THT
Gate charge: 87nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Technology: TRENCHSTOP™
Anzahl je Verpackung: 1 Stücke
auf Bestellung 125 Stücke:
Lieferzeit 7-14 Tag (e)
32+2.29 EUR
52+1.39 EUR
69+1.04 EUR
100+0.99 EUR
Mindestbestellmenge: 32
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IKP15N65H5XKSA1 IKP15N65H5XKSA1 INFINEON TECHNOLOGIES IKP15N65H5-DTE.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 15A; 105W; TO220-3; H5
Type of transistor: IGBT
Power dissipation: 105W
Case: TO220-3
Mounting: THT
Gate charge: 38nC
Kind of package: tube
Collector current: 15A
Gate-emitter voltage: ±20V
Features of semiconductor devices: integrated anti-parallel diode
Manufacturer series: H5
Pulsed collector current: 45A
Collector-emitter voltage: 650V
Anzahl je Verpackung: 1 Stücke
auf Bestellung 315 Stücke:
Lieferzeit 7-14 Tag (e)
27+2.72 EUR
29+2.53 EUR
38+1.93 EUR
43+1.69 EUR
51+1.42 EUR
100+1.27 EUR
Mindestbestellmenge: 27
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IKP20N60TXKSA1 IKP20N60TXKSA1 INFINEON TECHNOLOGIES IKP20N60T.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 20A; 166W; TO220-3
Type of transistor: IGBT
Technology: TRENCHSTOP™
Power dissipation: 166W
Case: TO220-3
Mounting: THT
Kind of package: tube
Collector-emitter voltage: 600V
Features of semiconductor devices: integrated anti-parallel diode
Gate charge: 0.12µC
Turn-on time: 36ns
Turn-off time: 299ns
Collector current: 20A
Gate-emitter voltage: ±20V
Pulsed collector current: 60A
Anzahl je Verpackung: 1 Stücke
auf Bestellung 420 Stücke:
Lieferzeit 7-14 Tag (e)
21+3.53 EUR
25+2.97 EUR
50+2.04 EUR
Mindestbestellmenge: 21
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IKP20N65H5XKSA1 IKP20N65H5XKSA1 INFINEON TECHNOLOGIES IKP20N65H5-DTE.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 20A; 125W; TO220-3; H5
Type of transistor: IGBT
Power dissipation: 125W
Case: TO220-3
Mounting: THT
Kind of package: tube
Collector current: 20A
Gate-emitter voltage: ±20V
Pulsed collector current: 60A
Collector-emitter voltage: 650V
Manufacturer series: H5
Features of semiconductor devices: integrated anti-parallel diode
Gate charge: 48nC
Anzahl je Verpackung: 1 Stücke
auf Bestellung 301 Stücke:
Lieferzeit 7-14 Tag (e)
20+3.66 EUR
23+3.13 EUR
50+2.04 EUR
Mindestbestellmenge: 20
Im Einkaufswagen  Stück im Wert von  UAH
IKQ75N120CS6XKSA1 IKQ75N120CS6XKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB82531EE986B09007A649B8BF&compId=IKQ75N120CS6XKSA1.pdf?ci_sign=da4429176011a05079a0b9331dca0f7487332609 Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 75A; 440W; PG-TO247-3-46
Mounting: THT
Kind of package: tube
Gate charge: 530nC
Collector current: 75A
Gate-emitter voltage: ±20V
Power dissipation: 440W
Pulsed collector current: 300A
Collector-emitter voltage: 1.2kV
Technology: TRENCHSTOP™ 6
Type of transistor: IGBT
Features of semiconductor devices: integrated anti-parallel diode
Case: PG-TO247-3-46
Anzahl je Verpackung: 1 Stücke
auf Bestellung 31 Stücke:
Lieferzeit 7-14 Tag (e)
8+9.88 EUR
10+8.17 EUR
30+7.61 EUR
120+6.98 EUR
150+6.89 EUR
480+6.38 EUR
510+6.33 EUR
Mindestbestellmenge: 8
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IKW15N120BH6XKSA1 IKW15N120BH6XKSA1 INFINEON TECHNOLOGIES IKW15N120BH6.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 15A; 100W; TO247-3
Mounting: THT
Features of semiconductor devices: integrated anti-parallel diode
Type of transistor: IGBT
Kind of package: tube
Case: TO247-3
Gate charge: 92nC
Collector current: 15A
Gate-emitter voltage: ±20V
Pulsed collector current: 60A
Power dissipation: 100W
Collector-emitter voltage: 1.2kV
Technology: TRENCHSTOP™ 6
Anzahl je Verpackung: 1 Stücke
auf Bestellung 86 Stücke:
Lieferzeit 7-14 Tag (e)
21+3.5 EUR
25+2.97 EUR
32+2.29 EUR
35+2.06 EUR
Mindestbestellmenge: 21
Im Einkaufswagen  Stück im Wert von  UAH
IKW15N120H3FKSA1 IKW15N120H3FKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED5ABF4ADAB9D8E51CC&compId=IKW15N120H3-DTE.pdf?ci_sign=5e67717d8537695a7facaef0bb16de80cf14fc4a Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 30A; 217W; TO247-3; H3
Type of transistor: IGBT
Manufacturer series: H3
Features of semiconductor devices: integrated anti-parallel diode
Mounting: THT
Case: TO247-3
Technology: TRENCHSTOP™ 3
Kind of package: tube
Gate charge: 75nC
Collector current: 30A
Gate-emitter voltage: ±20V
Power dissipation: 217W
Pulsed collector current: 60A
Collector-emitter voltage: 1.2kV
Anzahl je Verpackung: 1 Stücke
auf Bestellung 177 Stücke:
Lieferzeit 7-14 Tag (e)
14+5.19 EUR
17+4.46 EUR
18+4.2 EUR
Mindestbestellmenge: 14
Im Einkaufswagen  Stück im Wert von  UAH
IKW15N120T2FKSA1 IKW15N120T2FKSA1 INFINEON TECHNOLOGIES IKW15N120T2_Rev2_1.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a304412b407950112b426d2d43acd Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 30A; 235W; TO247-3
Type of transistor: IGBT
Features of semiconductor devices: integrated anti-parallel diode
Mounting: THT
Case: TO247-3
Technology: TRENCHSTOP™ 2
Kind of package: tube
Turn-on time: 57ns
Gate charge: 93nC
Turn-off time: 457ns
Collector current: 30A
Gate-emitter voltage: ±20V
Power dissipation: 235W
Pulsed collector current: 60A
Collector-emitter voltage: 1.2kV
Anzahl je Verpackung: 1 Stücke
auf Bestellung 56 Stücke:
Lieferzeit 7-14 Tag (e)
12+6.48 EUR
14+5.25 EUR
30+4.05 EUR
120+3.9 EUR
Mindestbestellmenge: 12
Im Einkaufswagen  Stück im Wert von  UAH
IKW20N60H3FKSA1 IKW20N60H3FKSA1 INFINEON TECHNOLOGIES IKW20N60H3.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 20A; 85W; TO247-3
Type of transistor: IGBT
Technology: TRENCHSTOP™
Power dissipation: 85W
Case: TO247-3
Mounting: THT
Kind of package: tube
Collector-emitter voltage: 600V
Features of semiconductor devices: integrated anti-parallel diode
Gate charge: 0.12µC
Turn-on time: 28ns
Turn-off time: 205ns
Collector current: 20A
Gate-emitter voltage: ±20V
Pulsed collector current: 80A
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IKW20N60TFKSA1 IKW20N60TFKSA1 INFINEON TECHNOLOGIES IKW20N60T.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 20A; 166W; TO247-3
Type of transistor: IGBT
Technology: TRENCHSTOP™
Power dissipation: 166W
Case: TO247-3
Mounting: THT
Kind of package: tube
Collector-emitter voltage: 600V
Features of semiconductor devices: integrated anti-parallel diode
Gate charge: 0.12µC
Turn-on time: 36ns
Turn-off time: 299ns
Collector current: 20A
Gate-emitter voltage: ±20V
Pulsed collector current: 60A
Anzahl je Verpackung: 1 Stücke
auf Bestellung 123 Stücke:
Lieferzeit 7-14 Tag (e)
19+3.86 EUR
25+2.9 EUR
28+2.6 EUR
33+2.19 EUR
120+1.87 EUR
Mindestbestellmenge: 19
Im Einkaufswagen  Stück im Wert von  UAH
IKW25N120H3FKSA1 IKW25N120H3FKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED5ABF4AFA32A35D1CC&compId=IKW25N120H3-DTE.pdf?ci_sign=a514e131da34fbe6b92466a983691a3367199936 Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 50A; 326W; TO247-3; H3
Type of transistor: IGBT
Technology: TRENCHSTOP™ 3
Collector-emitter voltage: 1.2kV
Collector current: 50A
Power dissipation: 326W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 100A
Mounting: THT
Gate charge: 115nC
Kind of package: tube
Manufacturer series: H3
Features of semiconductor devices: integrated anti-parallel diode
Anzahl je Verpackung: 1 Stücke
auf Bestellung 49 Stücke:
Lieferzeit 7-14 Tag (e)
12+6.21 EUR
13+5.92 EUR
14+5.13 EUR
16+4.66 EUR
20+4 EUR
30+3.99 EUR
Mindestbestellmenge: 12
Im Einkaufswagen  Stück im Wert von  UAH
IKW25N120T2FKSA1 IKW25N120T2FKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE586B445A567FCC469&compId=IKW25N120T2.pdf?ci_sign=f5d440dc422e32eecd5cb390c0ed98526ec247c5 Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 50A; 349W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 50A
Power dissipation: 349W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 100A
Mounting: THT
Gate charge: 0.12µC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Anzahl je Verpackung: 1 Stücke
auf Bestellung 238 Stücke:
Lieferzeit 7-14 Tag (e)
12+6.29 EUR
13+5.51 EUR
20+4.89 EUR
30+4.56 EUR
Mindestbestellmenge: 12
Im Einkaufswagen  Stück im Wert von  UAH
IKW30N60H3FKSA1 IKW30N60H3FKSA1 INFINEON TECHNOLOGIES IKW30N60H3.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 30A; 94W; TO247-3; H3
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 30A
Power dissipation: 94W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Mounting: THT
Gate charge: 165nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Technology: TRENCHSTOP™ 3
Manufacturer series: H3
Anzahl je Verpackung: 1 Stücke
auf Bestellung 28 Stücke:
Lieferzeit 7-14 Tag (e)
21+3.53 EUR
27+2.7 EUR
28+2.56 EUR
Mindestbestellmenge: 21
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IKW30N65EL5XKSA1 IKW30N65EL5XKSA1 INFINEON TECHNOLOGIES IKW30N65EL5.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 62A; 114W; TO247-3
Type of transistor: IGBT
Technology: TRENCHSTOP™ 5
Power dissipation: 114W
Case: TO247-3
Mounting: THT
Gate charge: 168nC
Kind of package: tube
Collector-emitter voltage: 650V
Features of semiconductor devices: integrated anti-parallel diode
Turn-on time: 44ns
Turn-off time: 359ns
Gate-emitter voltage: ±20V
Collector current: 62A
Pulsed collector current: 120A
Anzahl je Verpackung: 1 Stücke
auf Bestellung 229 Stücke:
Lieferzeit 7-14 Tag (e)
17+4.43 EUR
18+4.15 EUR
22+3.27 EUR
25+2.9 EUR
30+2.7 EUR
120+2.62 EUR
Mindestbestellmenge: 17
Im Einkaufswagen  Stück im Wert von  UAH
IKW30N65ES5XKSA1 IKW30N65ES5XKSA1 INFINEON TECHNOLOGIES IKW30N65ES5.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 39.5A; TO247-3
Type of transistor: IGBT
Technology: TRENCHSTOP™ 5
Case: TO247-3
Mounting: THT
Gate charge: 70nC
Kind of package: tube
Collector-emitter voltage: 650V
Features of semiconductor devices: integrated anti-parallel diode
Turn-on time: 29ns
Turn-off time: 154ns
Gate-emitter voltage: ±20V
Collector current: 39.5A
Pulsed collector current: 120A
Anzahl je Verpackung: 1 Stücke
auf Bestellung 36 Stücke:
Lieferzeit 7-14 Tag (e)
16+4.73 EUR
22+3.32 EUR
23+3.22 EUR
Mindestbestellmenge: 16
Im Einkaufswagen  Stück im Wert von  UAH
IKW30N65WR5XKSA1 IKW30N65WR5XKSA1 INFINEON TECHNOLOGIES IKW30N65WR5.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 30A; 75W; TO247-3
Type of transistor: IGBT
Technology: TRENCHSTOP™ 5
Power dissipation: 75W
Case: TO247-3
Mounting: THT
Gate charge: 155nC
Kind of package: tube
Collector-emitter voltage: 650V
Features of semiconductor devices: integrated anti-parallel diode
Turn-on time: 51ns
Turn-off time: 376ns
Gate-emitter voltage: ±20V
Collector current: 30A
Pulsed collector current: 90A
Anzahl je Verpackung: 1 Stücke
auf Bestellung 4 Stücke:
Lieferzeit 7-14 Tag (e)
4+17.88 EUR
10+7.15 EUR
30+3.52 EUR
120+3.5 EUR
Mindestbestellmenge: 4
Im Einkaufswagen  Stück im Wert von  UAH
IKW40N120CS6XKSA1 IKW40N120CS6XKSA1 INFINEON TECHNOLOGIES IKW40N120CS6.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 40A; 250W; TO247-3
Type of transistor: IGBT
Technology: TRENCHSTOP™ 6
Collector-emitter voltage: 1.2kV
Collector current: 40A
Power dissipation: 250W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 160A
Mounting: THT
Gate charge: 285nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Anzahl je Verpackung: 1 Stücke
auf Bestellung 79 Stücke:
Lieferzeit 7-14 Tag (e)
11+6.68 EUR
13+5.88 EUR
14+5.23 EUR
30+4.29 EUR
Mindestbestellmenge: 11
Im Einkaufswagen  Stück im Wert von  UAH
IKW40N120H3FKSA1 IKW40N120H3FKSA1 INFINEON TECHNOLOGIES IKW40N120H3-DTE.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 80A; 483W; TO247-3; H3
Type of transistor: IGBT
Technology: TRENCHSTOP™ 3
Collector-emitter voltage: 1.2kV
Collector current: 80A
Power dissipation: 483W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 160A
Mounting: THT
Gate charge: 185nC
Kind of package: tube
Manufacturer series: H3
Features of semiconductor devices: integrated anti-parallel diode
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IKW40N120T2FKSA1 IKW40N120T2FKSA1 INFINEON TECHNOLOGIES IKW40N120T2.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 40A; 480W; TO247-3
Type of transistor: IGBT
Technology: TRENCHSTOP™
Collector-emitter voltage: 1.2kV
Collector current: 40A
Power dissipation: 480W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 165A
Mounting: THT
Gate charge: 192nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Anzahl je Verpackung: 1 Stücke
auf Bestellung 67 Stücke:
Lieferzeit 7-14 Tag (e)
9+8.35 EUR
10+7.38 EUR
11+6.65 EUR
Mindestbestellmenge: 9
Im Einkaufswagen  Stück im Wert von  UAH
IKW40N60H3FKSA1 IKW40N60H3FKSA1 INFINEON TECHNOLOGIES IKW40N60H3.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 40A; 153W; TO247-3
Type of transistor: IGBT
Technology: TRENCHSTOP™
Power dissipation: 153W
Case: TO247-3
Mounting: THT
Gate charge: 223nC
Kind of package: tube
Gate-emitter voltage: ±20V
Pulsed collector current: 160A
Collector-emitter voltage: 600V
Turn-on time: 52ns
Features of semiconductor devices: integrated anti-parallel diode
Turn-off time: 218ns
Collector current: 40A
Anzahl je Verpackung: 1 Stücke
auf Bestellung 119 Stücke:
Lieferzeit 7-14 Tag (e)
15+5.05 EUR
17+4.35 EUR
18+4.06 EUR
Mindestbestellmenge: 15
Im Einkaufswagen  Stück im Wert von  UAH
IKW40N65F5FKSA1 IKW40N65F5FKSA1 INFINEON TECHNOLOGIES IKW40N65F5-DTE.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 74A; 250W; TO247-3; F5
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 74A
Power dissipation: 250W
Case: TO247-3
Gate-emitter voltage: ±20V
Mounting: THT
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Technology: TRENCHSTOP™ 5
Manufacturer series: F5
Anzahl je Verpackung: 1 Stücke
auf Bestellung 174 Stücke:
Lieferzeit 7-14 Tag (e)
17+4.33 EUR
23+3.16 EUR
25+2.86 EUR
30+2.46 EUR
60+2.27 EUR
Mindestbestellmenge: 17
Im Einkaufswagen  Stück im Wert von  UAH
IKW40N65H5FKSA1 IKW40N65H5FKSA1 INFINEON TECHNOLOGIES IKW40N65H5-DTE.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 74A; 250W; TO247-3; H5
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 74A
Power dissipation: 250W
Case: TO247-3
Gate-emitter voltage: ±20V
Mounting: THT
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Technology: TRENCHSTOP™ 5
Manufacturer series: H5
Anzahl je Verpackung: 1 Stücke
auf Bestellung 65 Stücke:
Lieferzeit 7-14 Tag (e)
14+5.12 EUR
18+4.03 EUR
21+3.49 EUR
30+3.16 EUR
60+2.95 EUR
Mindestbestellmenge: 14
Im Einkaufswagen  Stück im Wert von  UAH
IKW40N65WR5XKSA1 IKW40N65WR5XKSA1 INFINEON TECHNOLOGIES IKW40N65WR5.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 40A; 115W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 40A
Power dissipation: 115W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Mounting: THT
Gate charge: 193nC
Kind of package: tube
Turn-on time: 60ns
Turn-off time: 448ns
Features of semiconductor devices: integrated anti-parallel diode
Technology: TRENCHSTOP™ 5
Anzahl je Verpackung: 1 Stücke
auf Bestellung 16 Stücke:
Lieferzeit 7-14 Tag (e)
16+4.46 EUR
20+3.58 EUR
30+2.55 EUR
Mindestbestellmenge: 16
Im Einkaufswagen  Stück im Wert von  UAH
IKW50N60DTPXKSA1 IKW50N60DTPXKSA1 INFINEON TECHNOLOGIES IKW50N60DTP.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 61A; 159.6W; TO247-3
Type of transistor: IGBT
Technology: TRENCHSTOP™
Power dissipation: 159.6W
Case: TO247-3
Mounting: THT
Gate charge: 249nC
Kind of package: tube
Turn-on time: 50ns
Turn-off time: 233ns
Features of semiconductor devices: integrated anti-parallel diode
Gate-emitter voltage: ±20V
Collector current: 61A
Pulsed collector current: 150A
Collector-emitter voltage: 600V
Anzahl je Verpackung: 1 Stücke
auf Bestellung 441 Stücke:
Lieferzeit 7-14 Tag (e)
24+3.07 EUR
26+2.77 EUR
30+2.45 EUR
120+2.2 EUR
240+2.06 EUR
Mindestbestellmenge: 24
Im Einkaufswagen  Stück im Wert von  UAH
IKW50N60H3FKSA1 IKW50N60H3FKSA1 INFINEON TECHNOLOGIES IKW50N60H3.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 50A; 167W; TO247-3; H3
Type of transistor: IGBT
Technology: TRENCHSTOP™ 3
Collector-emitter voltage: 600V
Collector current: 50A
Power dissipation: 167W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Mounting: THT
Gate charge: 315nC
Kind of package: tube
Manufacturer series: H3
Turn-on time: 54ns
Turn-off time: 297ns
Features of semiconductor devices: integrated anti-parallel diode
Anzahl je Verpackung: 1 Stücke
auf Bestellung 296 Stücke:
Lieferzeit 7-14 Tag (e)
14+5.41 EUR
16+4.76 EUR
30+4.3 EUR
120+3.86 EUR
240+3.6 EUR
Mindestbestellmenge: 14
Im Einkaufswagen  Stück im Wert von  UAH
IKW50N60TFKSA1 IKW50N60TFKSA1 INFINEON TECHNOLOGIES IKW50N60T-dte.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 50A; 333W; TO247-3
Type of transistor: IGBT
Technology: TRENCHSTOP™
Power dissipation: 333W
Case: TO247-3
Mounting: THT
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Gate-emitter voltage: ±20V
Collector current: 50A
Collector-emitter voltage: 600V
Anzahl je Verpackung: 1 Stücke
auf Bestellung 65 Stücke:
Lieferzeit 7-14 Tag (e)
11+6.95 EUR
12+6.12 EUR
30+5.52 EUR
120+4.96 EUR
240+4.63 EUR
Mindestbestellmenge: 11
Im Einkaufswagen  Stück im Wert von  UAH
IKW50N65F5FKSA1 IKW50N65F5FKSA1 INFINEON TECHNOLOGIES IKW50N65F5-DTE.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 50A; 305W; TO247-3; F5
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 50A
Power dissipation: 305W
Case: TO247-3
Gate-emitter voltage: ±20V
Mounting: THT
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Technology: TRENCHSTOP™ 5
Manufacturer series: F5
Anzahl je Verpackung: 1 Stücke
auf Bestellung 41 Stücke:
Lieferzeit 7-14 Tag (e)
18+4.18 EUR
26+2.77 EUR
30+2.42 EUR
60+2.4 EUR
Mindestbestellmenge: 18
Im Einkaufswagen  Stück im Wert von  UAH
IKW50N65H5FKSA1 IKW50N65H5FKSA1 INFINEON TECHNOLOGIES IKW50N65H5FKSA1-DTE.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 50A; 305W; TO247-3; H5
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 50A
Power dissipation: 305W
Case: TO247-3
Gate-emitter voltage: ±20V
Mounting: THT
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Technology: TRENCHSTOP™ 5
Manufacturer series: H5
Anzahl je Verpackung: 1 Stücke
auf Bestellung 113 Stücke:
Lieferzeit 7-14 Tag (e)
14+5.35 EUR
17+4.36 EUR
20+3.82 EUR
30+3.72 EUR
Mindestbestellmenge: 14
Im Einkaufswagen  Stück im Wert von  UAH
IKW50N65WR5XKSA1 IKW50N65WR5XKSA1 INFINEON TECHNOLOGIES IKW50N65WR5.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 50A; 141W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 50A
Power dissipation: 141W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 150A
Mounting: THT
Gate charge: 230nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Turn-on time: 79ns
Turn-off time: 420ns
Technology: TRENCHSTOP™ 5
Anzahl je Verpackung: 1 Stücke
auf Bestellung 73 Stücke:
Lieferzeit 7-14 Tag (e)
15+4.98 EUR
16+4.59 EUR
Mindestbestellmenge: 15
Im Einkaufswagen  Stück im Wert von  UAH
IKW75N60H3FKSA1 IKW75N60H3FKSA1 INFINEON TECHNOLOGIES IKW75N60H3FKSA1.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 75A; 428W; TO247-3
Type of transistor: IGBT
Technology: TRENCHSTOP™
Power dissipation: 428W
Case: TO247-3
Mounting: THT
Gate charge: 470nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Turn-on time: 85ns
Turn-off time: 332ns
Collector current: 75A
Gate-emitter voltage: ±20V
Pulsed collector current: 225A
Collector-emitter voltage: 600V
Anzahl je Verpackung: 1 Stücke
auf Bestellung 228 Stücke:
Lieferzeit 7-14 Tag (e)
11+6.75 EUR
14+5.42 EUR
Mindestbestellmenge: 11
Im Einkaufswagen  Stück im Wert von  UAH
IKW75N60TFKSA1 IKW75N60TFKSA1 INFINEON TECHNOLOGIES IKW75N60T.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 75A; 428W; TO247-3
Type of transistor: IGBT
Technology: TRENCHSTOP™
Collector-emitter voltage: 600V
Collector current: 75A
Power dissipation: 428W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 225A
Mounting: THT
Gate charge: 470nC
Kind of package: tube
Turn-on time: 69ns
Turn-off time: 401ns
Features of semiconductor devices: integrated anti-parallel diode
Anzahl je Verpackung: 1 Stücke
auf Bestellung 30 Stücke:
Lieferzeit 7-14 Tag (e)
10+7.78 EUR
12+6.26 EUR
13+5.88 EUR
Mindestbestellmenge: 10
Im Einkaufswagen  Stück im Wert von  UAH
IKW75N65ES5XKSA1 IKW75N65ES5XKSA1 INFINEON TECHNOLOGIES IKW75N65ES5.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 80A; 197W; TO247-3
Type of transistor: IGBT
Technology: TRENCHSTOP™ 5
Power dissipation: 197W
Case: TO247-3
Mounting: THT
Gate charge: 164nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Turn-on time: 86ns
Turn-off time: 185ns
Gate-emitter voltage: ±20V
Collector current: 80A
Pulsed collector current: 300A
Collector-emitter voltage: 650V
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1 Stücke:
Lieferzeit 7-14 Tag (e)
1+71.5 EUR
30+6.12 EUR
Im Einkaufswagen  Stück im Wert von  UAH
IMW65R072M1HXKSA1 IMW65R072M1HXKSA1 INFINEON TECHNOLOGIES Infineon-IMW65R072M1H-DataSheet-v02_00-EN.pdf?fileId=5546d4626f229553016f85c9c62a0482 Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 18A; Idm: 69A; 96W; TO247
Type of transistor: N-MOSFET
Technology: CoolSiC™; SiC
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 18A
Pulsed drain current: 69A
Power dissipation: 96W
Case: TO247
Gate-source voltage: -5...23V
On-state resistance: 94mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 25 Stücke:
Lieferzeit 7-14 Tag (e)
5+15.56 EUR
10+13.73 EUR
30+12.37 EUR
Mindestbestellmenge: 5
Im Einkaufswagen  Stück im Wert von  UAH
IMZ120R030M1HXKSA1 INFINEON TECHNOLOGIES Infineon-IMZ120R030M1H-DS-v01_01-EN.pdf?fileId=5546d46269e1c019016a92fdcc776696 IMZ120R030M1HXKSA1 THT N channel transistors
auf Bestellung 28 Stücke:
Lieferzeit 7-14 Tag (e)
3+28 EUR
Mindestbestellmenge: 3
Im Einkaufswagen  Stück im Wert von  UAH
IMZA65R048M1HXKSA1 IMZA65R048M1HXKSA1 INFINEON TECHNOLOGIES Infineon-IMZA65R048M1H-DataSheet-v02_00-EN.pdf?fileId=5546d4626f229553016f85d9ac090535 Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 24A; Idm: 100A; 125W
Type of transistor: N-MOSFET
Technology: CoolSiC™; SiC
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 24A
Pulsed drain current: 100A
Power dissipation: 125W
Case: TO247-4
Gate-source voltage: -5...23V
On-state resistance: 63mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Anzahl je Verpackung: 1 Stücke
auf Bestellung 220 Stücke:
Lieferzeit 7-14 Tag (e)
8+10.07 EUR
9+8.12 EUR
10+7.21 EUR
Mindestbestellmenge: 8
Im Einkaufswagen  Stück im Wert von  UAH
IPA037N08N3GXKSA1 IPA037N08N3GXKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A4BA3A9933A0411C&compId=IPA037N08N3G-DTE.pdf?ci_sign=6b115aba7aa7ae88218f5a510759582c14070b7e Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 75A; 41W; TO220FP
Mounting: THT
Kind of channel: enhancement
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Case: TO220FP
Kind of package: tube
Polarisation: unipolar
On-state resistance: 3.7mΩ
Gate-source voltage: ±20V
Power dissipation: 41W
Drain current: 75A
Drain-source voltage: 80V
Anzahl je Verpackung: 1 Stücke
auf Bestellung 18 Stücke:
Lieferzeit 7-14 Tag (e)
18+3.98 EUR
50+2.79 EUR
250+2.52 EUR
1000+2.45 EUR
Mindestbestellmenge: 18
Im Einkaufswagen  Stück im Wert von  UAH
IPA041N04NGXKSA1 INFINEON TECHNOLOGIES Infineon-IPA041N04N_G-DS-v02_00-en.pdf?fileId=5546d46145460399014560aaf8193f1c IPA041N04NGXKSA1 THT N channel transistors
auf Bestellung 130 Stücke:
Lieferzeit 7-14 Tag (e)
26+2.8 EUR
97+0.74 EUR
103+0.7 EUR
Mindestbestellmenge: 26
Im Einkaufswagen  Stück im Wert von  UAH
IPA057N06N3GXKSA1 INFINEON TECHNOLOGIES IPA057N06N3_Rev2+0.pdf?folderId=db3a30431441fb5d01148ca9f1be0e77&fileId=db3a3043284aacd8012882b3ac145428 IPA057N06N3GXKSA1 THT N channel transistors
auf Bestellung 45 Stücke:
Lieferzeit 7-14 Tag (e)
20+3.72 EUR
45+1.59 EUR
Mindestbestellmenge: 20
Im Einkaufswagen  Stück im Wert von  UAH
IHW25N120E1XKSA1 pVersion=0046&contRep=ZT&docId=005056AB82531ED99EDC709B02919820&compId=IHW25N120E1.pdf?ci_sign=044805b42bcb3062c7f87ce990fa46fd76a11e9d
IHW25N120E1XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; TRENCHSTOP™ RC; 1.2kV; 25A; 92.4W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 25A
Power dissipation: 92.4W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 75A
Mounting: THT
Gate charge: 147nC
Kind of package: tube
Features of semiconductor devices: reverse conducting IGBT (RC-IGBT)
Technology: TRENCHSTOP™ RC
Turn-off time: 2004ns
Anzahl je Verpackung: 1 Stücke
auf Bestellung 167 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
16+4.52 EUR
24+2.99 EUR
30+2.57 EUR
60+2.43 EUR
Mindestbestellmenge: 16
Im Einkaufswagen  Stück im Wert von  UAH
IHW30N120R5XKSA1 IHW30N120R5.pdf
IHW30N120R5XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; TRENCHSTOP™ RC; 1.2kV; 30A; 165W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 30A
Power dissipation: 165W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 90A
Mounting: THT
Gate charge: 235nC
Kind of package: tube
Features of semiconductor devices: reverse conducting IGBT (RC-IGBT)
Turn-off time: 363ns
Technology: TRENCHSTOP™ RC
Anzahl je Verpackung: 1 Stücke
auf Bestellung 128 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
18+3.98 EUR
25+2.86 EUR
30+2.57 EUR
120+2.49 EUR
Mindestbestellmenge: 18
Im Einkaufswagen  Stück im Wert von  UAH
IHW30N135R5XKSA1 IHW30N135R5.pdf
IHW30N135R5XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.35kV; 30A; 165W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 1.35kV
Collector current: 30A
Power dissipation: 165W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 90A
Mounting: THT
Gate charge: 235nC
Kind of package: tube
Features of semiconductor devices: reverse conducting IGBT (RC-IGBT)
Turn-off time: 680ns
Technology: TRENCHSTOP™
Anzahl je Verpackung: 1 Stücke
auf Bestellung 122 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
23+3.25 EUR
25+2.86 EUR
30+2.55 EUR
120+2.32 EUR
450+2.16 EUR
Mindestbestellmenge: 23
Im Einkaufswagen  Stück im Wert von  UAH
IHW30N160R5XKSA1 IHW30N160R5.pdf
IHW30N160R5XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.6kV; 39A; 131.5W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 1.6kV
Collector current: 39A
Power dissipation: 131.5W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 90A
Mounting: THT
Gate charge: 205nC
Kind of package: tube
Features of semiconductor devices: reverse conducting IGBT (RC-IGBT)
Turn-off time: 411ns
Technology: TRENCHSTOP™
Anzahl je Verpackung: 1 Stücke
auf Bestellung 41 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
13+5.73 EUR
15+5.06 EUR
16+4.5 EUR
30+3.76 EUR
Mindestbestellmenge: 13
Im Einkaufswagen  Stück im Wert von  UAH
IHW40N120R5XKSA1 pVersion=0046&contRep=ZT&docId=005056AB82531ED99EDCA5EF2915F820&compId=IHW40N120R5.pdf?ci_sign=ff87a8c36a7c399a49fec60936b41c23e7a4c9aa
IHW40N120R5XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; TRENCHSTOP™ RC; 1.2kV; 40A; 197W; TO247-3
Type of transistor: IGBT
Technology: TRENCHSTOP™ RC
Power dissipation: 197W
Case: TO247-3
Mounting: THT
Gate charge: 310nC
Kind of package: tube
Features of semiconductor devices: reverse conducting IGBT (RC-IGBT)
Collector current: 40A
Collector-emitter voltage: 1.2kV
Turn-off time: 440ns
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Anzahl je Verpackung: 1 Stücke
auf Bestellung 168 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
20+3.72 EUR
23+3.19 EUR
29+2.49 EUR
32+2.3 EUR
Mindestbestellmenge: 20
Im Einkaufswagen  Stück im Wert von  UAH
IHW40N135R5XKSA1 Infineon-IHW40N135R5-DS-v02_02-EN.pdf?fileId=5546d462636cc8fb0163b0fe63f5326a
IHW40N135R5XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; TRENCHSTOP™ RC; 1.35kV; 40A; 197W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 1.35kV
Collector current: 40A
Power dissipation: 197W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Mounting: THT
Gate charge: 305nC
Kind of package: tube
Features of semiconductor devices: reverse conducting IGBT (RC-IGBT)
Turn-off time: 0.5µs
Technology: TRENCHSTOP™ RC
Anzahl je Verpackung: 1 Stücke
auf Bestellung 123 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
15+5 EUR
17+4.45 EUR
21+3.42 EUR
24+3.09 EUR
30+3.02 EUR
Mindestbestellmenge: 15
Im Einkaufswagen  Stück im Wert von  UAH
IHW40N65R5XKSA1 IHW40N65R5.pdf
IHW40N65R5XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 40A; 152W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 40A
Power dissipation: 152W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Mounting: THT
Gate charge: 193nC
Kind of package: tube
Turn-on time: 59ns
Turn-off time: 273ns
Features of semiconductor devices: reverse conducting IGBT (RC-IGBT)
Technology: TRENCHSTOP™ 5
Anzahl je Verpackung: 1 Stücke
auf Bestellung 45 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
27+2.67 EUR
34+2.13 EUR
42+1.72 EUR
Mindestbestellmenge: 27
Im Einkaufswagen  Stück im Wert von  UAH
IHW40N65R6XKSA1 Infineon-IHW40N65R6-DataSheet-v01_20-EN.pdf?fileId=5546d46277fc7439017826e19dad7275
IHW40N65R6XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 54A; 105W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 54A
Power dissipation: 105W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Mounting: THT
Gate charge: 159nC
Kind of package: tube
Turn-on time: 36ns
Turn-off time: 256ns
Features of semiconductor devices: reverse conducting IGBT (RC-IGBT)
Anzahl je Verpackung: 1 Stücke
auf Bestellung 177 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
18+4.06 EUR
27+2.69 EUR
30+2.56 EUR
Mindestbestellmenge: 18
Im Einkaufswagen  Stück im Wert von  UAH
IHW50N65R5XKSA1 IHW50N65R5.pdf
IHW50N65R5XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 50A; 141W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 50A
Power dissipation: 141W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 150A
Mounting: THT
Gate charge: 230nC
Kind of package: tube
Features of semiconductor devices: reverse conducting IGBT (RC-IGBT)
Turn-on time: 50ns
Turn-off time: 218ns
Technology: TRENCHSTOP™ 5
Anzahl je Verpackung: 1 Stücke
auf Bestellung 174 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
16+4.59 EUR
Mindestbestellmenge: 16
Im Einkaufswagen  Stück im Wert von  UAH
IKA10N65ET6XKSA2 IKA10N65ET6.pdf
IKA10N65ET6XKSA2
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 9A; 20W; TO220FP; T6
Type of transistor: IGBT
Technology: TRENCHSTOP™ 6
Power dissipation: 20W
Case: TO220FP
Mounting: THT
Kind of package: tube
Collector current: 9A
Gate-emitter voltage: ±20V
Pulsed collector current: 42.5A
Collector-emitter voltage: 650V
Features of semiconductor devices: integrated anti-parallel diode
Manufacturer series: T6
Gate charge: 27nC
Anzahl je Verpackung: 1 Stücke
auf Bestellung 73 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
40+1.83 EUR
43+1.69 EUR
50+1.62 EUR
100+1.46 EUR
250+1.36 EUR
500+1.34 EUR
Mindestbestellmenge: 40
Im Einkaufswagen  Stück im Wert von  UAH
IKB10N60TATMA1 IKB10N60T.pdf
IKB10N60TATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD IGBT transistors
Description: Transistor: IGBT; 600V; 18A; 110W; D2PAK
Type of transistor: IGBT
Technology: TRENCHSTOP™
Power dissipation: 110W
Case: D2PAK
Mounting: SMD
Kind of package: reel; tape
Gate-emitter voltage: ±20V
Pulsed collector current: 30A
Collector-emitter voltage: 600V
Features of semiconductor devices: integrated anti-parallel diode
Gate charge: 62nC
Turn-on time: 20ns
Turn-off time: 253ns
Collector current: 18A
Anzahl je Verpackung: 1 Stücke
auf Bestellung 659 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
32+2.27 EUR
41+1.77 EUR
48+1.52 EUR
Mindestbestellmenge: 32
Im Einkaufswagen  Stück im Wert von  UAH
IKB15N60TATMA1 IKB15N60T.pdf
IKB15N60TATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD IGBT transistors
Description: Transistor: IGBT; 600V; 23A; 130W; D2PAK
Type of transistor: IGBT
Technology: TRENCHSTOP™
Power dissipation: 130W
Case: D2PAK
Mounting: SMD
Gate charge: 87nC
Kind of package: reel; tape
Collector current: 23A
Turn-off time: 238ns
Turn-on time: 28ns
Gate-emitter voltage: ±20V
Pulsed collector current: 45A
Collector-emitter voltage: 600V
Features of semiconductor devices: integrated anti-parallel diode
Anzahl je Verpackung: 1 Stücke
auf Bestellung 762 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
25+2.97 EUR
29+2.52 EUR
30+2.4 EUR
Mindestbestellmenge: 25
Im Einkaufswagen  Stück im Wert von  UAH
IKB20N65EH5ATMA1 IKB20N65EH5.pdf
IKB20N65EH5ATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD IGBT transistors
Description: Transistor: IGBT; 650V; 25A; 62.5W; D2PAK
Type of transistor: IGBT
Technology: TRENCHSTOP™ 5
Power dissipation: 62.5W
Case: D2PAK
Mounting: SMD
Kind of package: reel; tape
Collector current: 25A
Gate-emitter voltage: ±20V
Pulsed collector current: 60A
Collector-emitter voltage: 650V
Features of semiconductor devices: integrated anti-parallel diode
Turn-on time: 40ns
Gate charge: 48nC
Turn-off time: 183ns
Anzahl je Verpackung: 1 Stücke
auf Bestellung 913 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
19+3.78 EUR
27+2.66 EUR
Mindestbestellmenge: 19
Im Einkaufswagen  Stück im Wert von  UAH
IKCM10H60GAXKMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE89BACDC852B5593D7&compId=IKCM10H60GA.pdf?ci_sign=4b5a98fd60881639d3b88e907a50e2961c030923
IKCM10H60GAXKMA1
Hersteller: INFINEON TECHNOLOGIES
Category: Motor and PWM drivers
Description: IC: driver; IGBT three-phase bridge,thermistor; PG-MDIP24; 20kHz
Type of integrated circuit: driver
Kind of integrated circuit: 3-phase motor controller; IPM
Case: PG-MDIP24
Output current: -10...10A
Mounting: THT
Operating temperature: -40...125°C
Power dissipation: 23.1W
Operating voltage: 13.5...18.5/0...400V DC
Voltage class: 600V
Frequency: 20kHz
Integrated circuit features: integrated bootstrap functionality
Technology: ClPOS™ Mini; TRENCHSTOP™
Topology: IGBT three-phase bridge; thermistor
Anzahl je Verpackung: 1 Stücke
auf Bestellung 44 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
8+9.07 EUR
9+8.62 EUR
Mindestbestellmenge: 8
Im Einkaufswagen  Stück im Wert von  UAH
IKCM15H60GAXKMA2 Infineon-IKCM15H60GA-DS-v01_02-EN.pdf?fileId=5546d4624fb7fef2014fcb68016c78ec
Hersteller: INFINEON TECHNOLOGIES
IKCM15H60GA Motor and PWM drivers
auf Bestellung 38 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
7+10.22 EUR
10+10.2 EUR
Mindestbestellmenge: 7
Im Einkaufswagen  Stück im Wert von  UAH
IKCM30F60GAXKMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED6BCD5B09CEE67DE28&compId=IKCM30F60GA.pdf?ci_sign=783f1af8ac5ce8035a854959701563b15dac9467
IKCM30F60GAXKMA1
Hersteller: INFINEON TECHNOLOGIES
Category: Motor and PWM drivers
Description: IC: driver; IGBT three-phase bridge,thermistor; PG-MDIP24; 20kHz
Type of integrated circuit: driver
Topology: IGBT three-phase bridge; thermistor
Kind of integrated circuit: 3-phase motor controller; IPM
Technology: ClPOS™ Mini; TRENCHSTOP™
Case: PG-MDIP24
Output current: -20...20A
Integrated circuit features: integrated bootstrap functionality
Mounting: THT
Operating temperature: -40...125°C
Operating voltage: 13.5...18.5/0...400V DC
Frequency: 20kHz
Voltage class: 600V
Protection: anti-overload OPP; undervoltage UVP
Power dissipation: 30.3W
Anzahl je Verpackung: 1 Stücke
auf Bestellung 13 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
5+15.86 EUR
Mindestbestellmenge: 5
Im Einkaufswagen  Stück im Wert von  UAH
IKD04N60RATMA1 IKD04N60R.pdf
IKD04N60RATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD IGBT transistors
Description: Transistor: IGBT; TRENCHSTOP™ RC; 600V; 4A; 75W; DPAK
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 4A
Power dissipation: 75W
Case: DPAK
Gate-emitter voltage: ±20V
Pulsed collector current: 12A
Mounting: SMD
Gate charge: 27nC
Kind of package: reel; tape
Features of semiconductor devices: integrated anti-parallel diode
Turn-off time: 317ns
Technology: TRENCHSTOP™ RC
Turn-on time: 22ns
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2479 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
44+1.64 EUR
69+1.05 EUR
104+0.69 EUR
500+0.54 EUR
Mindestbestellmenge: 44
Im Einkaufswagen  Stück im Wert von  UAH
IKD06N60RATMA1 IKD06N60R.pdf
IKD06N60RATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD IGBT transistors
Description: Transistor: IGBT; TRENCHSTOP™ RC; 600V; 6A; 100W; DPAK
Type of transistor: IGBT
Technology: TRENCHSTOP™ RC
Power dissipation: 100W
Case: DPAK
Mounting: SMD
Gate charge: 48nC
Kind of package: reel; tape
Collector-emitter voltage: 600V
Features of semiconductor devices: integrated anti-parallel diode
Turn-on time: 19ns
Turn-off time: 279ns
Collector current: 6A
Pulsed collector current: 18A
Gate-emitter voltage: ±20V
Anzahl je Verpackung: 1 Stücke
auf Bestellung 780 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
45+1.62 EUR
70+1.03 EUR
101+0.71 EUR
Mindestbestellmenge: 45
Im Einkaufswagen  Stück im Wert von  UAH
IKD15N60RATMA1 IKD15N60R.pdf
IKD15N60RATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD IGBT transistors
Description: Transistor: IGBT; TRENCHSTOP™ RC; 600V; 15A; 250W; DPAK
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 15A
Power dissipation: 250W
Case: DPAK
Gate-emitter voltage: ±20V
Pulsed collector current: 45A
Mounting: SMD
Gate charge: 90nC
Kind of package: reel; tape
Features of semiconductor devices: integrated anti-parallel diode
Turn-off time: 319ns
Technology: TRENCHSTOP™ RC
Turn-on time: 26ns
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1955 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
30+2.42 EUR
38+1.92 EUR
43+1.69 EUR
51+1.42 EUR
Mindestbestellmenge: 30
Im Einkaufswagen  Stück im Wert von  UAH
IKFW50N60DH3EXKSA1 IKFW50N60DH3E.pdf
IKFW50N60DH3EXKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 37A; 95W; PG-TO247-3-AI
Type of transistor: IGBT
Technology: TRENCHSTOP™
Power dissipation: 95W
Case: PG-TO247-3-AI
Mounting: THT
Gate charge: 160nC
Kind of package: tube
Turn-on time: 60ns
Turn-off time: 192ns
Features of semiconductor devices: integrated anti-parallel diode
Gate-emitter voltage: ±20V
Collector current: 37A
Pulsed collector current: 120A
Collector-emitter voltage: 600V
Anzahl je Verpackung: 1 Stücke
auf Bestellung 6 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
6+11.91 EUR
30+5.18 EUR
Mindestbestellmenge: 6
Im Einkaufswagen  Stück im Wert von  UAH
IKP06N60TXKSA1 IKP06N60T.pdf
IKP06N60TXKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 6A; 88W; TO220-3
Type of transistor: IGBT
Technology: TRENCHSTOP™
Power dissipation: 88W
Case: TO220-3
Mounting: THT
Gate charge: 42nC
Kind of package: tube
Collector-emitter voltage: 600V
Features of semiconductor devices: integrated anti-parallel diode
Turn-on time: 15ns
Turn-off time: 188ns
Collector current: 6A
Pulsed collector current: 18A
Gate-emitter voltage: ±20V
Anzahl je Verpackung: 1 Stücke
auf Bestellung 497 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
36+1.99 EUR
49+1.49 EUR
64+1.13 EUR
100+1.07 EUR
Mindestbestellmenge: 36
Im Einkaufswagen  Stück im Wert von  UAH
IKP10N60TXKSA1 IKP10N60T.pdf
IKP10N60TXKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 10A; 110W; TO220AB
Type of transistor: IGBT
Power dissipation: 110W
Case: TO220AB
Mounting: THT
Kind of package: tube
Gate-emitter voltage: ±20V
Pulsed collector current: 30A
Collector-emitter voltage: 600V
Features of semiconductor devices: integrated anti-parallel diode
Gate charge: 62nC
Collector current: 10A
Anzahl je Verpackung: 1 Stücke
auf Bestellung 556 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
34+2.14 EUR
46+1.59 EUR
59+1.23 EUR
100+1.1 EUR
Mindestbestellmenge: 34
Im Einkaufswagen  Stück im Wert von  UAH
IKP15N60TXKSA1 IKP15N60T-DTE.pdf
IKP15N60TXKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 15A; 130W; TO220-3
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 15A
Power dissipation: 130W
Case: TO220-3
Gate-emitter voltage: ±20V
Pulsed collector current: 45A
Mounting: THT
Gate charge: 87nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Technology: TRENCHSTOP™
Anzahl je Verpackung: 1 Stücke
auf Bestellung 125 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
32+2.29 EUR
52+1.39 EUR
69+1.04 EUR
100+0.99 EUR
Mindestbestellmenge: 32
Im Einkaufswagen  Stück im Wert von  UAH
IKP15N65H5XKSA1 IKP15N65H5-DTE.pdf
IKP15N65H5XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 15A; 105W; TO220-3; H5
Type of transistor: IGBT
Power dissipation: 105W
Case: TO220-3
Mounting: THT
Gate charge: 38nC
Kind of package: tube
Collector current: 15A
Gate-emitter voltage: ±20V
Features of semiconductor devices: integrated anti-parallel diode
Manufacturer series: H5
Pulsed collector current: 45A
Collector-emitter voltage: 650V
Anzahl je Verpackung: 1 Stücke
auf Bestellung 315 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
27+2.72 EUR
29+2.53 EUR
38+1.93 EUR
43+1.69 EUR
51+1.42 EUR
100+1.27 EUR
Mindestbestellmenge: 27
Im Einkaufswagen  Stück im Wert von  UAH
IKP20N60TXKSA1 IKP20N60T.pdf
IKP20N60TXKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 20A; 166W; TO220-3
Type of transistor: IGBT
Technology: TRENCHSTOP™
Power dissipation: 166W
Case: TO220-3
Mounting: THT
Kind of package: tube
Collector-emitter voltage: 600V
Features of semiconductor devices: integrated anti-parallel diode
Gate charge: 0.12µC
Turn-on time: 36ns
Turn-off time: 299ns
Collector current: 20A
Gate-emitter voltage: ±20V
Pulsed collector current: 60A
Anzahl je Verpackung: 1 Stücke
auf Bestellung 420 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
21+3.53 EUR
25+2.97 EUR
50+2.04 EUR
Mindestbestellmenge: 21
Im Einkaufswagen  Stück im Wert von  UAH
IKP20N65H5XKSA1 IKP20N65H5-DTE.pdf
IKP20N65H5XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 20A; 125W; TO220-3; H5
Type of transistor: IGBT
Power dissipation: 125W
Case: TO220-3
Mounting: THT
Kind of package: tube
Collector current: 20A
Gate-emitter voltage: ±20V
Pulsed collector current: 60A
Collector-emitter voltage: 650V
Manufacturer series: H5
Features of semiconductor devices: integrated anti-parallel diode
Gate charge: 48nC
Anzahl je Verpackung: 1 Stücke
auf Bestellung 301 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
20+3.66 EUR
23+3.13 EUR
50+2.04 EUR
Mindestbestellmenge: 20
Im Einkaufswagen  Stück im Wert von  UAH
IKQ75N120CS6XKSA1 pVersion=0046&contRep=ZT&docId=005056AB82531EE986B09007A649B8BF&compId=IKQ75N120CS6XKSA1.pdf?ci_sign=da4429176011a05079a0b9331dca0f7487332609
IKQ75N120CS6XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 75A; 440W; PG-TO247-3-46
Mounting: THT
Kind of package: tube
Gate charge: 530nC
Collector current: 75A
Gate-emitter voltage: ±20V
Power dissipation: 440W
Pulsed collector current: 300A
Collector-emitter voltage: 1.2kV
Technology: TRENCHSTOP™ 6
Type of transistor: IGBT
Features of semiconductor devices: integrated anti-parallel diode
Case: PG-TO247-3-46
Anzahl je Verpackung: 1 Stücke
auf Bestellung 31 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
8+9.88 EUR
10+8.17 EUR
30+7.61 EUR
120+6.98 EUR
150+6.89 EUR
480+6.38 EUR
510+6.33 EUR
Mindestbestellmenge: 8
Im Einkaufswagen  Stück im Wert von  UAH
IKW15N120BH6XKSA1 IKW15N120BH6.pdf
IKW15N120BH6XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 15A; 100W; TO247-3
Mounting: THT
Features of semiconductor devices: integrated anti-parallel diode
Type of transistor: IGBT
Kind of package: tube
Case: TO247-3
Gate charge: 92nC
Collector current: 15A
Gate-emitter voltage: ±20V
Pulsed collector current: 60A
Power dissipation: 100W
Collector-emitter voltage: 1.2kV
Technology: TRENCHSTOP™ 6
Anzahl je Verpackung: 1 Stücke
auf Bestellung 86 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
21+3.5 EUR
25+2.97 EUR
32+2.29 EUR
35+2.06 EUR
Mindestbestellmenge: 21
Im Einkaufswagen  Stück im Wert von  UAH
IKW15N120H3FKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED5ABF4ADAB9D8E51CC&compId=IKW15N120H3-DTE.pdf?ci_sign=5e67717d8537695a7facaef0bb16de80cf14fc4a
IKW15N120H3FKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 30A; 217W; TO247-3; H3
Type of transistor: IGBT
Manufacturer series: H3
Features of semiconductor devices: integrated anti-parallel diode
Mounting: THT
Case: TO247-3
Technology: TRENCHSTOP™ 3
Kind of package: tube
Gate charge: 75nC
Collector current: 30A
Gate-emitter voltage: ±20V
Power dissipation: 217W
Pulsed collector current: 60A
Collector-emitter voltage: 1.2kV
Anzahl je Verpackung: 1 Stücke
auf Bestellung 177 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
14+5.19 EUR
17+4.46 EUR
18+4.2 EUR
Mindestbestellmenge: 14
Im Einkaufswagen  Stück im Wert von  UAH
IKW15N120T2FKSA1 IKW15N120T2_Rev2_1.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a304412b407950112b426d2d43acd
IKW15N120T2FKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 30A; 235W; TO247-3
Type of transistor: IGBT
Features of semiconductor devices: integrated anti-parallel diode
Mounting: THT
Case: TO247-3
Technology: TRENCHSTOP™ 2
Kind of package: tube
Turn-on time: 57ns
Gate charge: 93nC
Turn-off time: 457ns
Collector current: 30A
Gate-emitter voltage: ±20V
Power dissipation: 235W
Pulsed collector current: 60A
Collector-emitter voltage: 1.2kV
Anzahl je Verpackung: 1 Stücke
auf Bestellung 56 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
12+6.48 EUR
14+5.25 EUR
30+4.05 EUR
120+3.9 EUR
Mindestbestellmenge: 12
Im Einkaufswagen  Stück im Wert von  UAH
IKW20N60H3FKSA1 IKW20N60H3.pdf
IKW20N60H3FKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 20A; 85W; TO247-3
Type of transistor: IGBT
Technology: TRENCHSTOP™
Power dissipation: 85W
Case: TO247-3
Mounting: THT
Kind of package: tube
Collector-emitter voltage: 600V
Features of semiconductor devices: integrated anti-parallel diode
Gate charge: 0.12µC
Turn-on time: 28ns
Turn-off time: 205ns
Collector current: 20A
Gate-emitter voltage: ±20V
Pulsed collector current: 80A
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IKW20N60TFKSA1 IKW20N60T.pdf
IKW20N60TFKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 20A; 166W; TO247-3
Type of transistor: IGBT
Technology: TRENCHSTOP™
Power dissipation: 166W
Case: TO247-3
Mounting: THT
Kind of package: tube
Collector-emitter voltage: 600V
Features of semiconductor devices: integrated anti-parallel diode
Gate charge: 0.12µC
Turn-on time: 36ns
Turn-off time: 299ns
Collector current: 20A
Gate-emitter voltage: ±20V
Pulsed collector current: 60A
Anzahl je Verpackung: 1 Stücke
auf Bestellung 123 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
19+3.86 EUR
25+2.9 EUR
28+2.6 EUR
33+2.19 EUR
120+1.87 EUR
Mindestbestellmenge: 19
Im Einkaufswagen  Stück im Wert von  UAH
IKW25N120H3FKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED5ABF4AFA32A35D1CC&compId=IKW25N120H3-DTE.pdf?ci_sign=a514e131da34fbe6b92466a983691a3367199936
IKW25N120H3FKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 50A; 326W; TO247-3; H3
Type of transistor: IGBT
Technology: TRENCHSTOP™ 3
Collector-emitter voltage: 1.2kV
Collector current: 50A
Power dissipation: 326W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 100A
Mounting: THT
Gate charge: 115nC
Kind of package: tube
Manufacturer series: H3
Features of semiconductor devices: integrated anti-parallel diode
Anzahl je Verpackung: 1 Stücke
auf Bestellung 49 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
12+6.21 EUR
13+5.92 EUR
14+5.13 EUR
16+4.66 EUR
20+4 EUR
30+3.99 EUR
Mindestbestellmenge: 12
Im Einkaufswagen  Stück im Wert von  UAH
IKW25N120T2FKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE586B445A567FCC469&compId=IKW25N120T2.pdf?ci_sign=f5d440dc422e32eecd5cb390c0ed98526ec247c5
IKW25N120T2FKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 50A; 349W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 50A
Power dissipation: 349W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 100A
Mounting: THT
Gate charge: 0.12µC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Anzahl je Verpackung: 1 Stücke
auf Bestellung 238 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
12+6.29 EUR
13+5.51 EUR
20+4.89 EUR
30+4.56 EUR
Mindestbestellmenge: 12
Im Einkaufswagen  Stück im Wert von  UAH
IKW30N60H3FKSA1 IKW30N60H3.pdf
IKW30N60H3FKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 30A; 94W; TO247-3; H3
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 30A
Power dissipation: 94W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Mounting: THT
Gate charge: 165nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Technology: TRENCHSTOP™ 3
Manufacturer series: H3
Anzahl je Verpackung: 1 Stücke
auf Bestellung 28 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
21+3.53 EUR
27+2.7 EUR
28+2.56 EUR
Mindestbestellmenge: 21
Im Einkaufswagen  Stück im Wert von  UAH
IKW30N65EL5XKSA1 IKW30N65EL5.pdf
IKW30N65EL5XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 62A; 114W; TO247-3
Type of transistor: IGBT
Technology: TRENCHSTOP™ 5
Power dissipation: 114W
Case: TO247-3
Mounting: THT
Gate charge: 168nC
Kind of package: tube
Collector-emitter voltage: 650V
Features of semiconductor devices: integrated anti-parallel diode
Turn-on time: 44ns
Turn-off time: 359ns
Gate-emitter voltage: ±20V
Collector current: 62A
Pulsed collector current: 120A
Anzahl je Verpackung: 1 Stücke
auf Bestellung 229 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
17+4.43 EUR
18+4.15 EUR
22+3.27 EUR
25+2.9 EUR
30+2.7 EUR
120+2.62 EUR
Mindestbestellmenge: 17
Im Einkaufswagen  Stück im Wert von  UAH
IKW30N65ES5XKSA1 IKW30N65ES5.pdf
IKW30N65ES5XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 39.5A; TO247-3
Type of transistor: IGBT
Technology: TRENCHSTOP™ 5
Case: TO247-3
Mounting: THT
Gate charge: 70nC
Kind of package: tube
Collector-emitter voltage: 650V
Features of semiconductor devices: integrated anti-parallel diode
Turn-on time: 29ns
Turn-off time: 154ns
Gate-emitter voltage: ±20V
Collector current: 39.5A
Pulsed collector current: 120A
Anzahl je Verpackung: 1 Stücke
auf Bestellung 36 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
16+4.73 EUR
22+3.32 EUR
23+3.22 EUR
Mindestbestellmenge: 16
Im Einkaufswagen  Stück im Wert von  UAH
IKW30N65WR5XKSA1 IKW30N65WR5.pdf
IKW30N65WR5XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 30A; 75W; TO247-3
Type of transistor: IGBT
Technology: TRENCHSTOP™ 5
Power dissipation: 75W
Case: TO247-3
Mounting: THT
Gate charge: 155nC
Kind of package: tube
Collector-emitter voltage: 650V
Features of semiconductor devices: integrated anti-parallel diode
Turn-on time: 51ns
Turn-off time: 376ns
Gate-emitter voltage: ±20V
Collector current: 30A
Pulsed collector current: 90A
Anzahl je Verpackung: 1 Stücke
auf Bestellung 4 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
4+17.88 EUR
10+7.15 EUR
30+3.52 EUR
120+3.5 EUR
Mindestbestellmenge: 4
Im Einkaufswagen  Stück im Wert von  UAH
IKW40N120CS6XKSA1 IKW40N120CS6.pdf
IKW40N120CS6XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 40A; 250W; TO247-3
Type of transistor: IGBT
Technology: TRENCHSTOP™ 6
Collector-emitter voltage: 1.2kV
Collector current: 40A
Power dissipation: 250W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 160A
Mounting: THT
Gate charge: 285nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Anzahl je Verpackung: 1 Stücke
auf Bestellung 79 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
11+6.68 EUR
13+5.88 EUR
14+5.23 EUR
30+4.29 EUR
Mindestbestellmenge: 11
Im Einkaufswagen  Stück im Wert von  UAH
IKW40N120H3FKSA1 IKW40N120H3-DTE.pdf
IKW40N120H3FKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 80A; 483W; TO247-3; H3
Type of transistor: IGBT
Technology: TRENCHSTOP™ 3
Collector-emitter voltage: 1.2kV
Collector current: 80A
Power dissipation: 483W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 160A
Mounting: THT
Gate charge: 185nC
Kind of package: tube
Manufacturer series: H3
Features of semiconductor devices: integrated anti-parallel diode
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IKW40N120T2FKSA1 IKW40N120T2.pdf
IKW40N120T2FKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 40A; 480W; TO247-3
Type of transistor: IGBT
Technology: TRENCHSTOP™
Collector-emitter voltage: 1.2kV
Collector current: 40A
Power dissipation: 480W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 165A
Mounting: THT
Gate charge: 192nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Anzahl je Verpackung: 1 Stücke
auf Bestellung 67 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
9+8.35 EUR
10+7.38 EUR
11+6.65 EUR
Mindestbestellmenge: 9
Im Einkaufswagen  Stück im Wert von  UAH
IKW40N60H3FKSA1 IKW40N60H3.pdf
IKW40N60H3FKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 40A; 153W; TO247-3
Type of transistor: IGBT
Technology: TRENCHSTOP™
Power dissipation: 153W
Case: TO247-3
Mounting: THT
Gate charge: 223nC
Kind of package: tube
Gate-emitter voltage: ±20V
Pulsed collector current: 160A
Collector-emitter voltage: 600V
Turn-on time: 52ns
Features of semiconductor devices: integrated anti-parallel diode
Turn-off time: 218ns
Collector current: 40A
Anzahl je Verpackung: 1 Stücke
auf Bestellung 119 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
15+5.05 EUR
17+4.35 EUR
18+4.06 EUR
Mindestbestellmenge: 15
Im Einkaufswagen  Stück im Wert von  UAH
IKW40N65F5FKSA1 IKW40N65F5-DTE.pdf
IKW40N65F5FKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 74A; 250W; TO247-3; F5
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 74A
Power dissipation: 250W
Case: TO247-3
Gate-emitter voltage: ±20V
Mounting: THT
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Technology: TRENCHSTOP™ 5
Manufacturer series: F5
Anzahl je Verpackung: 1 Stücke
auf Bestellung 174 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
17+4.33 EUR
23+3.16 EUR
25+2.86 EUR
30+2.46 EUR
60+2.27 EUR
Mindestbestellmenge: 17
Im Einkaufswagen  Stück im Wert von  UAH
IKW40N65H5FKSA1 IKW40N65H5-DTE.pdf
IKW40N65H5FKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 74A; 250W; TO247-3; H5
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 74A
Power dissipation: 250W
Case: TO247-3
Gate-emitter voltage: ±20V
Mounting: THT
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Technology: TRENCHSTOP™ 5
Manufacturer series: H5
Anzahl je Verpackung: 1 Stücke
auf Bestellung 65 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
14+5.12 EUR
18+4.03 EUR
21+3.49 EUR
30+3.16 EUR
60+2.95 EUR
Mindestbestellmenge: 14
Im Einkaufswagen  Stück im Wert von  UAH
IKW40N65WR5XKSA1 IKW40N65WR5.pdf
IKW40N65WR5XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 40A; 115W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 40A
Power dissipation: 115W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Mounting: THT
Gate charge: 193nC
Kind of package: tube
Turn-on time: 60ns
Turn-off time: 448ns
Features of semiconductor devices: integrated anti-parallel diode
Technology: TRENCHSTOP™ 5
Anzahl je Verpackung: 1 Stücke
auf Bestellung 16 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
16+4.46 EUR
20+3.58 EUR
30+2.55 EUR
Mindestbestellmenge: 16
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IKW50N60DTPXKSA1 IKW50N60DTP.pdf
IKW50N60DTPXKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 61A; 159.6W; TO247-3
Type of transistor: IGBT
Technology: TRENCHSTOP™
Power dissipation: 159.6W
Case: TO247-3
Mounting: THT
Gate charge: 249nC
Kind of package: tube
Turn-on time: 50ns
Turn-off time: 233ns
Features of semiconductor devices: integrated anti-parallel diode
Gate-emitter voltage: ±20V
Collector current: 61A
Pulsed collector current: 150A
Collector-emitter voltage: 600V
Anzahl je Verpackung: 1 Stücke
auf Bestellung 441 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
24+3.07 EUR
26+2.77 EUR
30+2.45 EUR
120+2.2 EUR
240+2.06 EUR
Mindestbestellmenge: 24
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IKW50N60H3FKSA1 IKW50N60H3.pdf
IKW50N60H3FKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 50A; 167W; TO247-3; H3
Type of transistor: IGBT
Technology: TRENCHSTOP™ 3
Collector-emitter voltage: 600V
Collector current: 50A
Power dissipation: 167W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Mounting: THT
Gate charge: 315nC
Kind of package: tube
Manufacturer series: H3
Turn-on time: 54ns
Turn-off time: 297ns
Features of semiconductor devices: integrated anti-parallel diode
Anzahl je Verpackung: 1 Stücke
auf Bestellung 296 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
14+5.41 EUR
16+4.76 EUR
30+4.3 EUR
120+3.86 EUR
240+3.6 EUR
Mindestbestellmenge: 14
Im Einkaufswagen  Stück im Wert von  UAH
IKW50N60TFKSA1 IKW50N60T-dte.pdf
IKW50N60TFKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 50A; 333W; TO247-3
Type of transistor: IGBT
Technology: TRENCHSTOP™
Power dissipation: 333W
Case: TO247-3
Mounting: THT
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Gate-emitter voltage: ±20V
Collector current: 50A
Collector-emitter voltage: 600V
Anzahl je Verpackung: 1 Stücke
auf Bestellung 65 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
11+6.95 EUR
12+6.12 EUR
30+5.52 EUR
120+4.96 EUR
240+4.63 EUR
Mindestbestellmenge: 11
Im Einkaufswagen  Stück im Wert von  UAH
IKW50N65F5FKSA1 IKW50N65F5-DTE.pdf
IKW50N65F5FKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 50A; 305W; TO247-3; F5
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 50A
Power dissipation: 305W
Case: TO247-3
Gate-emitter voltage: ±20V
Mounting: THT
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Technology: TRENCHSTOP™ 5
Manufacturer series: F5
Anzahl je Verpackung: 1 Stücke
auf Bestellung 41 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
18+4.18 EUR
26+2.77 EUR
30+2.42 EUR
60+2.4 EUR
Mindestbestellmenge: 18
Im Einkaufswagen  Stück im Wert von  UAH
IKW50N65H5FKSA1 IKW50N65H5FKSA1-DTE.pdf
IKW50N65H5FKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 50A; 305W; TO247-3; H5
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 50A
Power dissipation: 305W
Case: TO247-3
Gate-emitter voltage: ±20V
Mounting: THT
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Technology: TRENCHSTOP™ 5
Manufacturer series: H5
Anzahl je Verpackung: 1 Stücke
auf Bestellung 113 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
14+5.35 EUR
17+4.36 EUR
20+3.82 EUR
30+3.72 EUR
Mindestbestellmenge: 14
Im Einkaufswagen  Stück im Wert von  UAH
IKW50N65WR5XKSA1 IKW50N65WR5.pdf
IKW50N65WR5XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 50A; 141W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 50A
Power dissipation: 141W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 150A
Mounting: THT
Gate charge: 230nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Turn-on time: 79ns
Turn-off time: 420ns
Technology: TRENCHSTOP™ 5
Anzahl je Verpackung: 1 Stücke
auf Bestellung 73 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
15+4.98 EUR
16+4.59 EUR
Mindestbestellmenge: 15
Im Einkaufswagen  Stück im Wert von  UAH
IKW75N60H3FKSA1 IKW75N60H3FKSA1.pdf
IKW75N60H3FKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 75A; 428W; TO247-3
Type of transistor: IGBT
Technology: TRENCHSTOP™
Power dissipation: 428W
Case: TO247-3
Mounting: THT
Gate charge: 470nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Turn-on time: 85ns
Turn-off time: 332ns
Collector current: 75A
Gate-emitter voltage: ±20V
Pulsed collector current: 225A
Collector-emitter voltage: 600V
Anzahl je Verpackung: 1 Stücke
auf Bestellung 228 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
11+6.75 EUR
14+5.42 EUR
Mindestbestellmenge: 11
Im Einkaufswagen  Stück im Wert von  UAH
IKW75N60TFKSA1 IKW75N60T.pdf
IKW75N60TFKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 75A; 428W; TO247-3
Type of transistor: IGBT
Technology: TRENCHSTOP™
Collector-emitter voltage: 600V
Collector current: 75A
Power dissipation: 428W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 225A
Mounting: THT
Gate charge: 470nC
Kind of package: tube
Turn-on time: 69ns
Turn-off time: 401ns
Features of semiconductor devices: integrated anti-parallel diode
Anzahl je Verpackung: 1 Stücke
auf Bestellung 30 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
10+7.78 EUR
12+6.26 EUR
13+5.88 EUR
Mindestbestellmenge: 10
Im Einkaufswagen  Stück im Wert von  UAH
IKW75N65ES5XKSA1 IKW75N65ES5.pdf
IKW75N65ES5XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 80A; 197W; TO247-3
Type of transistor: IGBT
Technology: TRENCHSTOP™ 5
Power dissipation: 197W
Case: TO247-3
Mounting: THT
Gate charge: 164nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Turn-on time: 86ns
Turn-off time: 185ns
Gate-emitter voltage: ±20V
Collector current: 80A
Pulsed collector current: 300A
Collector-emitter voltage: 650V
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
1+71.5 EUR
30+6.12 EUR
Im Einkaufswagen  Stück im Wert von  UAH
IMW65R072M1HXKSA1 Infineon-IMW65R072M1H-DataSheet-v02_00-EN.pdf?fileId=5546d4626f229553016f85c9c62a0482
IMW65R072M1HXKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 18A; Idm: 69A; 96W; TO247
Type of transistor: N-MOSFET
Technology: CoolSiC™; SiC
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 18A
Pulsed drain current: 69A
Power dissipation: 96W
Case: TO247
Gate-source voltage: -5...23V
On-state resistance: 94mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 25 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
5+15.56 EUR
10+13.73 EUR
30+12.37 EUR
Mindestbestellmenge: 5
Im Einkaufswagen  Stück im Wert von  UAH
IMZ120R030M1HXKSA1 Infineon-IMZ120R030M1H-DS-v01_01-EN.pdf?fileId=5546d46269e1c019016a92fdcc776696
Hersteller: INFINEON TECHNOLOGIES
IMZ120R030M1HXKSA1 THT N channel transistors
auf Bestellung 28 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
3+28 EUR
Mindestbestellmenge: 3
Im Einkaufswagen  Stück im Wert von  UAH
IMZA65R048M1HXKSA1 Infineon-IMZA65R048M1H-DataSheet-v02_00-EN.pdf?fileId=5546d4626f229553016f85d9ac090535
IMZA65R048M1HXKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 24A; Idm: 100A; 125W
Type of transistor: N-MOSFET
Technology: CoolSiC™; SiC
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 24A
Pulsed drain current: 100A
Power dissipation: 125W
Case: TO247-4
Gate-source voltage: -5...23V
On-state resistance: 63mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Anzahl je Verpackung: 1 Stücke
auf Bestellung 220 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
8+10.07 EUR
9+8.12 EUR
10+7.21 EUR
Mindestbestellmenge: 8
Im Einkaufswagen  Stück im Wert von  UAH
IPA037N08N3GXKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A4BA3A9933A0411C&compId=IPA037N08N3G-DTE.pdf?ci_sign=6b115aba7aa7ae88218f5a510759582c14070b7e
IPA037N08N3GXKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 75A; 41W; TO220FP
Mounting: THT
Kind of channel: enhancement
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Case: TO220FP
Kind of package: tube
Polarisation: unipolar
On-state resistance: 3.7mΩ
Gate-source voltage: ±20V
Power dissipation: 41W
Drain current: 75A
Drain-source voltage: 80V
Anzahl je Verpackung: 1 Stücke
auf Bestellung 18 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
18+3.98 EUR
50+2.79 EUR
250+2.52 EUR
1000+2.45 EUR
Mindestbestellmenge: 18
Im Einkaufswagen  Stück im Wert von  UAH
IPA041N04NGXKSA1 Infineon-IPA041N04N_G-DS-v02_00-en.pdf?fileId=5546d46145460399014560aaf8193f1c
Hersteller: INFINEON TECHNOLOGIES
IPA041N04NGXKSA1 THT N channel transistors
auf Bestellung 130 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
26+2.8 EUR
97+0.74 EUR
103+0.7 EUR
Mindestbestellmenge: 26
Im Einkaufswagen  Stück im Wert von  UAH
IPA057N06N3GXKSA1 IPA057N06N3_Rev2+0.pdf?folderId=db3a30431441fb5d01148ca9f1be0e77&fileId=db3a3043284aacd8012882b3ac145428
Hersteller: INFINEON TECHNOLOGIES
IPA057N06N3GXKSA1 THT N channel transistors
auf Bestellung 45 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
20+3.72 EUR
45+1.59 EUR
Mindestbestellmenge: 20
Im Einkaufswagen  Stück im Wert von  UAH
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