Produkte > INFINEON TECHNOLOGIES > Alle Produkte des Herstellers INFINEON TECHNOLOGIES (149885) > Seite 1271 nach 2499
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IR21094STRPBF | INFINEON TECHNOLOGIES |
Category: MOSFET/IGBT driversDescription: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO14 Type of integrated circuit: driver Topology: MOSFET half-bridge Kind of integrated circuit: gate driver; high-/low-side Case: SO14 Output current: -250...120mA Number of channels: 2 Supply voltage: 10...20V DC Mounting: SMD Operating temperature: -40...125°C Kind of package: reel; tape Voltage class: 600V Turn-off time: 200ns Turn-on time: 750ns Power: 1W Anzahl je Verpackung: 1 Stücke |
auf Bestellung 1579 Stücke: Lieferzeit 7-14 Tag (e) |
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IR2109PBF | INFINEON TECHNOLOGIES |
Category: MOSFET/IGBT driversDescription: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; DIP8 Type of integrated circuit: driver Topology: MOSFET half-bridge Kind of integrated circuit: gate driver; high-/low-side Case: DIP8 Output current: -250...120mA Number of channels: 2 Supply voltage: 10...20V DC Mounting: THT Operating temperature: -40...125°C Kind of package: tube Voltage class: 600V Turn-off time: 200ns Turn-on time: 750ns Power: 1W Anzahl je Verpackung: 1 Stücke |
auf Bestellung 51 Stücke: Lieferzeit 7-14 Tag (e) |
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IR2109STRPBF | INFINEON TECHNOLOGIES |
Category: MOSFET/IGBT driversDescription: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8 Type of integrated circuit: driver Topology: MOSFET half-bridge Kind of integrated circuit: gate driver; high-/low-side Case: SO8 Output current: -250...120mA Number of channels: 2 Supply voltage: 10...20V DC Mounting: SMD Operating temperature: -40...125°C Kind of package: reel; tape Voltage class: 600V Turn-off time: 200ns Turn-on time: 750ns Power: 625mW Anzahl je Verpackung: 1 Stücke |
auf Bestellung 3719 Stücke: Lieferzeit 7-14 Tag (e) |
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IR2110PBF | INFINEON TECHNOLOGIES |
Category: MOSFET/IGBT driversDescription: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; 1.6W Mounting: THT Operating temperature: -40...125°C Output current: -2...2A Power: 1.6W Number of channels: 2 Supply voltage: 10...20V DC Turn-off time: 111ns Topology: MOSFET half-bridge Kind of integrated circuit: gate driver; high-/low-side Type of integrated circuit: driver Case: DIP14 Voltage class: 500V Kind of package: tube Turn-on time: 145ns Anzahl je Verpackung: 1 Stücke |
auf Bestellung 190 Stücke: Lieferzeit 7-14 Tag (e) |
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IR2110SPBF | INFINEON TECHNOLOGIES |
Category: MOSFET/IGBT driversDescription: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; Ch: 2 Mounting: SMD Operating temperature: -40...125°C Output current: -2...2A Power: 1.25W Number of channels: 2 Supply voltage: 10...20V DC Turn-off time: 111ns Topology: MOSFET half-bridge Kind of integrated circuit: gate driver; high-/low-side Type of integrated circuit: driver Case: SO16-W Voltage class: 500V Kind of package: tube Turn-on time: 145ns Anzahl je Verpackung: 1 Stücke |
auf Bestellung 310 Stücke: Lieferzeit 7-14 Tag (e) |
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IR2110STRPBF | INFINEON TECHNOLOGIES |
Category: MOSFET/IGBT driversDescription: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; Ch: 2 Mounting: SMD Operating temperature: -40...125°C Output current: -2...2A Power: 1.25W Number of channels: 2 Supply voltage: 10...20V DC Turn-off time: 111ns Topology: MOSFET half-bridge Kind of integrated circuit: gate driver; high-/low-side Type of integrated circuit: driver Case: SO16-W Voltage class: 500V Kind of package: reel; tape Turn-on time: 145ns Anzahl je Verpackung: 1 Stücke |
auf Bestellung 248 Stücke: Lieferzeit 7-14 Tag (e) |
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IR2111PBF | INFINEON TECHNOLOGIES |
Category: MOSFET/IGBT driversDescription: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; DIP8 Type of integrated circuit: driver Topology: MOSFET half-bridge Kind of integrated circuit: gate driver; high-/low-side Case: DIP8 Output current: -420...200mA Power: 1W Number of channels: 2 Supply voltage: 10...20V DC Mounting: THT Operating temperature: -40...125°C Kind of package: tube Voltage class: 600V Turn-on time: 830ns Turn-off time: 190ns Anzahl je Verpackung: 1 Stücke |
auf Bestellung 99 Stücke: Lieferzeit 7-14 Tag (e) |
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IR2111SPBF | INFINEON TECHNOLOGIES |
Category: MOSFET/IGBT driversDescription: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8 Type of integrated circuit: driver Topology: MOSFET half-bridge Kind of integrated circuit: gate driver; high-/low-side Case: SO8 Output current: -420...200mA Number of channels: 2 Supply voltage: 10...20V DC Mounting: SMD Operating temperature: -40...125°C Kind of package: tube Voltage class: 600V Turn-off time: 190ns Turn-on time: 830ns Power: 625mW Anzahl je Verpackung: 1 Stücke |
auf Bestellung 112 Stücke: Lieferzeit 7-14 Tag (e) |
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IR2112PBF | INFINEON TECHNOLOGIES |
Category: MOSFET/IGBT driversDescription: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; 1.6W Type of integrated circuit: driver Topology: MOSFET half-bridge Kind of integrated circuit: gate driver; high-/low-side Case: DIP14 Output current: -420...200mA Number of channels: 2 Supply voltage: 10...20V DC Mounting: THT Operating temperature: -40...125°C Kind of package: tube Voltage class: 600V Turn-off time: 145ns Turn-on time: 205ns Power: 1.6W Anzahl je Verpackung: 1 Stücke |
auf Bestellung 52 Stücke: Lieferzeit 7-14 Tag (e) |
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IR2112SPBF | INFINEON TECHNOLOGIES |
Category: MOSFET/IGBT driversDescription: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; Ch: 2 Type of integrated circuit: driver Topology: MOSFET half-bridge Kind of integrated circuit: gate driver; high-/low-side Case: SO16-W Output current: -420...200mA Number of channels: 2 Supply voltage: 10...20V DC Mounting: SMD Operating temperature: -40...125°C Kind of package: tube Voltage class: 600V Turn-off time: 145ns Turn-on time: 205ns Power: 1.25W Anzahl je Verpackung: 1 Stücke |
auf Bestellung 44 Stücke: Lieferzeit 7-14 Tag (e) |
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IR2112STRPBF | INFINEON TECHNOLOGIES |
Category: MOSFET/IGBT driversDescription: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; Ch: 2 Type of integrated circuit: driver Topology: MOSFET half-bridge Kind of integrated circuit: gate driver; high-/low-side Case: SO16-W Output current: -420...200mA Number of channels: 2 Supply voltage: 10...20V DC Mounting: SMD Operating temperature: -40...125°C Kind of package: reel; tape Voltage class: 600V Turn-off time: 145ns Turn-on time: 205ns Power: 1.25W Anzahl je Verpackung: 1 Stücke |
auf Bestellung 747 Stücke: Lieferzeit 7-14 Tag (e) |
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IR2113PBF | INFINEON TECHNOLOGIES |
Category: MOSFET/IGBT driversDescription: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; 1.6W Type of integrated circuit: driver Topology: MOSFET half-bridge Kind of integrated circuit: gate driver; high-/low-side Case: DIP14 Output current: -2...2A Number of channels: 2 Supply voltage: 10...20V DC Mounting: THT Operating temperature: -40...125°C Kind of package: tube Voltage class: 600V Turn-off time: 111ns Turn-on time: 145ns Power: 1.6W Anzahl je Verpackung: 1 Stücke |
auf Bestellung 185 Stücke: Lieferzeit 7-14 Tag (e) |
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IR2113SPBF | INFINEON TECHNOLOGIES |
Category: MOSFET/IGBT driversDescription: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; Ch: 2 Type of integrated circuit: driver Topology: MOSFET half-bridge Kind of integrated circuit: gate driver; high-/low-side Case: SO16-W Output current: -2...2A Number of channels: 2 Supply voltage: 10...20V DC Mounting: SMD Operating temperature: -40...125°C Kind of package: tube Voltage class: 600V Turn-off time: 111ns Turn-on time: 145ns Power: 1.25W Anzahl je Verpackung: 1 Stücke |
auf Bestellung 69 Stücke: Lieferzeit 7-14 Tag (e) |
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IR2113STRPBF | INFINEON TECHNOLOGIES |
Category: MOSFET/IGBT driversDescription: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; Ch: 2 Type of integrated circuit: driver Topology: MOSFET half-bridge Kind of integrated circuit: gate driver; high-/low-side Case: SO16-W Output current: -2...2A Number of channels: 2 Supply voltage: 10...20V DC Mounting: SMD Operating temperature: -40...125°C Kind of package: reel; tape Voltage class: 600V Turn-off time: 111ns Turn-on time: 145ns Power: 1.25W Anzahl je Verpackung: 1 Stücke |
auf Bestellung 886 Stücke: Lieferzeit 7-14 Tag (e) |
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IR2114SSPBF | INFINEON TECHNOLOGIES |
Category: MOSFET/IGBT driversDescription: IC: driver; IGBT half-bridge; high-/low-side,gate driver; SSOP24 Mounting: SMD Operating temperature: -40...125°C Output current: -1.5...1A Power: 1.5W Number of channels: 2 Supply voltage: 10.4...20V DC Turn-off time: 440ns Topology: IGBT half-bridge Kind of integrated circuit: gate driver; high-/low-side Type of integrated circuit: driver Case: SSOP24 Voltage class: 0.6/1.2kV Turn-on time: 440ns Anzahl je Verpackung: 1 Stücke |
auf Bestellung 30 Stücke: Lieferzeit 7-14 Tag (e) |
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IR2117PBF | INFINEON TECHNOLOGIES |
Category: MOSFET/IGBT driversDescription: IC: driver; single transistor; high-side,gate driver; DIP8; 1W Mounting: THT Operating temperature: -40...125°C Output current: -420...200mA Power: 1W Number of channels: 1 Supply voltage: 10...20V DC Turn-off time: 105ns Topology: single transistor Kind of integrated circuit: gate driver; high-side Type of integrated circuit: driver Case: DIP8 Voltage class: 600V Kind of package: tube Turn-on time: 125ns Anzahl je Verpackung: 1 Stücke |
auf Bestellung 233 Stücke: Lieferzeit 7-14 Tag (e) |
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IR2117SPBF | INFINEON TECHNOLOGIES |
Category: MOSFET/IGBT driversDescription: IC: driver; single transistor; high-side,gate driver; SO8; 625mW Mounting: SMD Operating temperature: -40...125°C Output current: -420...200mA Power: 625mW Number of channels: 1 Supply voltage: 10...20V DC Turn-off time: 105ns Topology: single transistor Kind of integrated circuit: gate driver; high-side Type of integrated circuit: driver Case: SO8 Voltage class: 600V Kind of package: tube Turn-on time: 125ns Anzahl je Verpackung: 1 Stücke |
auf Bestellung 223 Stücke: Lieferzeit 7-14 Tag (e) |
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IR2118SPBF | INFINEON TECHNOLOGIES |
Category: MOSFET/IGBT driversDescription: IC: driver; single transistor; high-side,gate driver; SO8; 625mW Mounting: SMD Operating temperature: -40...125°C Output current: -420...200mA Power: 625mW Number of channels: 1 Supply voltage: 10...20V DC Turn-off time: 105ns Topology: single transistor Kind of integrated circuit: gate driver; high-side Type of integrated circuit: driver Case: SO8 Voltage class: 600V Kind of package: tube Turn-on time: 125ns Anzahl je Verpackung: 1 Stücke |
auf Bestellung 41 Stücke: Lieferzeit 7-14 Tag (e) |
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IR2121PBF | INFINEON TECHNOLOGIES |
Category: MOSFET/IGBT driversDescription: IC: driver; high-/low-side,gate driver; DIP8; -2÷1A; 1W; Ch: 1; 5V Type of integrated circuit: driver Kind of integrated circuit: gate driver; high-/low-side Case: DIP8 Output current: -2...1A Power: 1W Number of channels: 1 Supply voltage: 12...18V DC Mounting: THT Operating temperature: -40...125°C Kind of package: tube Voltage class: 5V Turn-on time: 150ns Turn-off time: 105ns Anzahl je Verpackung: 1 Stücke |
auf Bestellung 164 Stücke: Lieferzeit 7-14 Tag (e) |
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IR2125PBF | INFINEON TECHNOLOGIES |
Category: MOSFET/IGBT driversDescription: IC: driver; single transistor; high-side,gate driver; DIP8; -2÷1A Type of integrated circuit: driver Kind of integrated circuit: gate driver; high-side Output current: -2...1A Mounting: THT Number of channels: 1 Operating temperature: -40...125°C Case: DIP8 Supply voltage: 12...18V DC Kind of package: tube Voltage class: 500V Topology: single transistor Turn-off time: 150ns Turn-on time: 150ns Power: 1W Anzahl je Verpackung: 1 Stücke |
auf Bestellung 197 Stücke: Lieferzeit 7-14 Tag (e) |
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IR2125SPBF | INFINEON TECHNOLOGIES |
Category: MOSFET/IGBT driversDescription: IC: driver; single transistor; high-side,gate driver; SO16; -2÷1A Type of integrated circuit: driver Kind of integrated circuit: gate driver; high-side Output current: -2...1A Mounting: SMD Number of channels: 1 Operating temperature: -40...125°C Case: SO16 Supply voltage: 12...18V DC Kind of package: tube Voltage class: 500V Topology: single transistor Turn-off time: 150ns Turn-on time: 150ns Power: 1.25W Anzahl je Verpackung: 1 Stücke |
auf Bestellung 1418 Stücke: Lieferzeit 7-14 Tag (e) |
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IR21271PBF | INFINEON TECHNOLOGIES |
Category: MOSFET/IGBT driversDescription: IC: driver; high-side,gate driver; DIP8; -420÷200mA; 1W; Ch: 1; 600V Type of integrated circuit: driver Kind of integrated circuit: gate driver; high-side Case: DIP8 Output current: -420...200mA Power: 1W Number of channels: 1 Supply voltage: 9...20V DC Mounting: THT Operating temperature: -40...125°C Kind of package: tube Voltage class: 600V Turn-on time: 150ns Turn-off time: 150ns Anzahl je Verpackung: 1 Stücke |
auf Bestellung 44 Stücke: Lieferzeit 7-14 Tag (e) |
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IR21271SPBF | INFINEON TECHNOLOGIES |
Category: MOSFET/IGBT driversDescription: IC: driver; high-side,gate driver; SO8; -420÷200mA; 625mW; Ch: 1 Type of integrated circuit: driver Kind of integrated circuit: gate driver; high-side Case: SO8 Output current: -420...200mA Power: 625mW Number of channels: 1 Supply voltage: 9...20V DC Mounting: SMD Operating temperature: -40...125°C Kind of package: tube Voltage class: 600V Turn-on time: 150ns Turn-off time: 150ns Anzahl je Verpackung: 1 Stücke |
auf Bestellung 17 Stücke: Lieferzeit 7-14 Tag (e) |
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IR2127PBF | INFINEON TECHNOLOGIES |
Category: MOSFET/IGBT driversDescription: IC: driver; high-side,gate driver; DIP8; -420÷200mA; 1W; Ch: 1; 600V Type of integrated circuit: driver Kind of integrated circuit: gate driver; high-side Case: DIP8 Output current: -420...200mA Power: 1W Number of channels: 1 Supply voltage: 12...20V DC Mounting: THT Operating temperature: -40...125°C Kind of package: tube Voltage class: 600V Turn-on time: 0.2µs Turn-off time: 150ns Anzahl je Verpackung: 1 Stücke |
auf Bestellung 111 Stücke: Lieferzeit 7-14 Tag (e) |
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IR2127SPBF | INFINEON TECHNOLOGIES |
Category: MOSFET/IGBT driversDescription: IC: driver; high-side,gate driver; SO8; -420÷200mA; 625mW; Ch: 1 Type of integrated circuit: driver Kind of integrated circuit: gate driver; high-side Case: SO8 Output current: -420...200mA Power: 625mW Number of channels: 1 Supply voltage: 10...20V DC Mounting: SMD Operating temperature: -40...125°C Kind of package: tube Voltage class: 600V Turn-on time: 0.2µs Turn-off time: 150ns Anzahl je Verpackung: 1 Stücke |
auf Bestellung 224 Stücke: Lieferzeit 7-14 Tag (e) |
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IR2128SPBF | INFINEON TECHNOLOGIES |
Category: MOSFET/IGBT driversDescription: IC: driver; high-side,gate driver; SO8; -420÷200mA; 625mW; Ch: 1 Type of integrated circuit: driver Mounting: SMD Case: SO8 Kind of package: tube Operating temperature: -40...125°C Output current: -420...200mA Turn-off time: 150ns Turn-on time: 0.2µs Power: 625mW Number of channels: 1 Supply voltage: 12...20V DC Voltage class: 600V Kind of integrated circuit: gate driver; high-side Anzahl je Verpackung: 1 Stücke |
auf Bestellung 86 Stücke: Lieferzeit 7-14 Tag (e) |
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IR2130SPBF | INFINEON TECHNOLOGIES |
Category: MOSFET/IGBT driversDescription: IC: driver; IGBT three-phase bridge,MOSFET three-phase bridge Type of integrated circuit: driver Topology: IGBT three-phase bridge; MOSFET three-phase bridge Kind of integrated circuit: gate driver; high-/low-side Case: SO28-W Output current: -420...200mA Number of channels: 6 Supply voltage: 10...20V DC Mounting: SMD Operating temperature: -40...125°C Kind of package: tube Voltage class: 600V Turn-off time: 475ns Turn-on time: 675ns Power: 1.6W Anzahl je Verpackung: 1 Stücke |
auf Bestellung 28 Stücke: Lieferzeit 7-14 Tag (e) |
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IR2132JPBF | INFINEON TECHNOLOGIES |
Category: MOSFET/IGBT driversDescription: IC: driver; IGBT three-phase bridge,MOSFET three-phase bridge Type of integrated circuit: driver Topology: IGBT three-phase bridge; MOSFET three-phase bridge Kind of integrated circuit: gate driver; high-/low-side Case: PLCC44 Output current: -420...200mA Number of channels: 6 Supply voltage: 10...20V DC Mounting: SMD Operating temperature: -40...125°C Kind of package: tube Voltage class: 600V Turn-off time: 475ns Turn-on time: 675ns Power: 2W Anzahl je Verpackung: 1 Stücke |
auf Bestellung 15 Stücke: Lieferzeit 7-14 Tag (e) |
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IR2132SPBF | INFINEON TECHNOLOGIES |
Category: MOSFET/IGBT driversDescription: IC: driver; IGBT three-phase bridge,MOSFET three-phase bridge Type of integrated circuit: driver Topology: IGBT three-phase bridge; MOSFET three-phase bridge Kind of integrated circuit: gate driver; high-/low-side Case: SO28-W Output current: -420...200mA Number of channels: 6 Mounting: SMD Supply voltage: 10...20V DC Voltage class: 600V Kind of package: tube Operating temperature: -40...125°C Turn-off time: 475ns Turn-on time: 675ns Power: 1.6W Anzahl je Verpackung: 1 Stücke |
auf Bestellung 25 Stücke: Lieferzeit 7-14 Tag (e) |
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IR2133SPBF | INFINEON TECHNOLOGIES |
Category: MOSFET/IGBT driversDescription: IC: driver; IGBT three-phase bridge,MOSFET three-phase bridge Type of integrated circuit: driver Topology: IGBT three-phase bridge; MOSFET three-phase bridge Kind of integrated circuit: gate driver; high-/low-side Case: SO28-W Output current: -420...200mA Number of channels: 6 Mounting: SMD Supply voltage: 10...20V DC Voltage class: 0.6/1.2kV Kind of package: tube Operating temperature: -40...125°C Turn-off time: 700ns Turn-on time: 750ns Power: 1.6W Anzahl je Verpackung: 1 Stücke |
auf Bestellung 14 Stücke: Lieferzeit 7-14 Tag (e) |
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IR2135JPBF | INFINEON TECHNOLOGIES |
Category: MOSFET/IGBT driversDescription: IC: driver; IGBT three-phase bridge,MOSFET three-phase bridge Type of integrated circuit: driver Topology: IGBT three-phase bridge; MOSFET three-phase bridge Kind of integrated circuit: gate driver; high-/low-side Case: PLCC44 Output current: -420...200mA Number of channels: 6 Mounting: SMD Supply voltage: 10...20V DC Voltage class: 0.6/1.2kV Kind of package: tube Operating temperature: -40...125°C Turn-off time: 700ns Turn-on time: 750ns Power: 2W Anzahl je Verpackung: 1 Stücke |
auf Bestellung 20 Stücke: Lieferzeit 7-14 Tag (e) |
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IR2136SPBF | INFINEON TECHNOLOGIES |
Category: MOSFET/IGBT driversDescription: IC: driver; IGBT three-phase bridge,MOSFET three-phase bridge Type of integrated circuit: driver Topology: IGBT three-phase bridge; MOSFET three-phase bridge Kind of integrated circuit: gate driver; high-/low-side Case: SO28-W Output current: -0.35...0.2A Number of channels: 6 Supply voltage: 10...20V DC Mounting: SMD Operating temperature: -40...125°C Kind of package: tube Voltage class: 600V Turn-off time: 380ns Turn-on time: 0.4µs Power: 1.6W Anzahl je Verpackung: 1 Stücke |
auf Bestellung 31 Stücke: Lieferzeit 7-14 Tag (e) |
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IR2153SPBF | INFINEON TECHNOLOGIES |
Category: MOSFET/IGBT driversDescription: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8 Power: 625mW Mounting: SMD Operating temperature: -40...125°C Turn-off time: 40ns Turn-on time: 80ns Number of channels: 2 Supply voltage: 10...15.6V DC Integrated circuit features: dead time; front end oscillator; integrated bootstrap functionality Voltage class: 600V Case: SO8 Type of integrated circuit: driver Kind of integrated circuit: gate driver; high-/low-side Topology: MOSFET half-bridge Kind of package: tube Anzahl je Verpackung: 1 Stücke |
auf Bestellung 700 Stücke: Lieferzeit 7-14 Tag (e) |
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IR2181SPBF | INFINEON TECHNOLOGIES |
Category: MOSFET/IGBT driversDescription: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8 Type of integrated circuit: driver Topology: MOSFET half-bridge Kind of integrated circuit: gate driver; high-/low-side Case: SO8 Output current: -2.3...1.9A Power: 625mW Number of channels: 2 Supply voltage: 10...20V DC Integrated circuit features: charge pump; integrated bootstrap functionality Mounting: SMD Operating temperature: -40...125°C Kind of package: tube Voltage class: 600V Turn-on time: 180ns Turn-off time: 0.22µs Protection: undervoltage UVP Anzahl je Verpackung: 1 Stücke |
auf Bestellung 75 Stücke: Lieferzeit 7-14 Tag (e) |
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IR21834SPBF | INFINEON TECHNOLOGIES |
Category: MOSFET/IGBT driversDescription: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO14 Type of integrated circuit: driver Topology: MOSFET half-bridge Kind of integrated circuit: gate driver; high-/low-side Case: SO14 Output current: -2.3...1.9A Power: 1W Number of channels: 2 Supply voltage: 10...20V DC Mounting: SMD Operating temperature: -40...125°C Kind of package: tube Voltage class: 600V Turn-on time: 180ns Turn-off time: 0.22µs Anzahl je Verpackung: 1 Stücke |
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IR2183SPBF | INFINEON TECHNOLOGIES |
Category: MOSFET/IGBT driversDescription: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8 Type of integrated circuit: driver Topology: MOSFET half-bridge Kind of integrated circuit: gate driver; high-/low-side Case: SO8 Output current: -2.3...1.9A Power: 625mW Number of channels: 2 Supply voltage: 10...20V DC Integrated circuit features: charge pump; dead time; integrated bootstrap functionality Mounting: SMD Operating temperature: -40...125°C Kind of package: tube Voltage class: 600V Turn-on time: 180ns Turn-off time: 0.22µs Protection: short circuit protection SCP; undervoltage UVP Anzahl je Verpackung: 1 Stücke |
auf Bestellung 63 Stücke: Lieferzeit 7-14 Tag (e) |
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IR21844SPBF | INFINEON TECHNOLOGIES |
Category: MOSFET/IGBT driversDescription: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO14 Type of integrated circuit: driver Topology: MOSFET half-bridge Kind of integrated circuit: gate driver; high-/low-side Case: SO14 Output current: -2.3...1.9A Power: 1W Number of channels: 2 Supply voltage: 10...20V DC Integrated circuit features: charge pump; dead time; integrated bootstrap functionality Mounting: SMD Operating temperature: -40...125°C Kind of package: tube Voltage class: 600V Turn-on time: 680ns Turn-off time: 270ns Protection: short circuit protection SCP; undervoltage UVP Anzahl je Verpackung: 1 Stücke |
auf Bestellung 95 Stücke: Lieferzeit 7-14 Tag (e) |
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IR2184PBF | INFINEON TECHNOLOGIES |
Category: MOSFET/IGBT driversDescription: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; DIP8 Type of integrated circuit: driver Topology: MOSFET half-bridge Kind of integrated circuit: gate driver; high-/low-side Case: DIP8 Output current: -2.3...1.9A Power: 1W Number of channels: 2 Supply voltage: 10...20V DC Integrated circuit features: charge pump; dead time; integrated bootstrap functionality Mounting: THT Operating temperature: -40...125°C Kind of package: tube Voltage class: 600V Turn-on time: 680ns Turn-off time: 270ns Protection: short circuit protection SCP; undervoltage UVP Anzahl je Verpackung: 1 Stücke |
auf Bestellung 43 Stücke: Lieferzeit 7-14 Tag (e) |
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IR2184SPBF | INFINEON TECHNOLOGIES |
Category: MOSFET/IGBT driversDescription: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8 Type of integrated circuit: driver Topology: MOSFET half-bridge Kind of integrated circuit: gate driver; high-/low-side Case: SO8 Output current: -2.3...1.9A Power: 625mW Number of channels: 2 Supply voltage: 10...20V DC Integrated circuit features: charge pump; dead time; integrated bootstrap functionality Mounting: SMD Operating temperature: -40...125°C Kind of package: tube Voltage class: 600V Turn-on time: 680ns Turn-off time: 270ns Protection: short circuit protection SCP; undervoltage UVP Anzahl je Verpackung: 1 Stücke |
auf Bestellung 97 Stücke: Lieferzeit 7-14 Tag (e) |
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IR2184STRPBF | INFINEON TECHNOLOGIES |
Category: MOSFET/IGBT driversDescription: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8 Type of integrated circuit: driver Topology: MOSFET half-bridge Kind of integrated circuit: gate driver; high-/low-side Case: SO8 Output current: -2.3...1.9A Power: 625mW Number of channels: 2 Supply voltage: 10...20V DC Integrated circuit features: charge pump; dead time; integrated bootstrap functionality Mounting: SMD Operating temperature: -40...125°C Kind of package: reel; tape Voltage class: 600V Turn-on time: 680ns Turn-off time: 270ns Protection: short circuit protection SCP; undervoltage UVP Anzahl je Verpackung: 1 Stücke |
auf Bestellung 2379 Stücke: Lieferzeit 7-14 Tag (e) |
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IR2214SSPBF | INFINEON TECHNOLOGIES |
Category: MOSFET/IGBT driversDescription: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; 1.5W Type of integrated circuit: driver Kind of integrated circuit: gate driver; high-/low-side Output current: -1.5...1A Number of channels: 2 Mounting: SMD Case: SSOP24 Supply voltage: 10.4...20V DC Voltage class: 0.6/1.2kV Topology: MOSFET half-bridge Operating temperature: -40...125°C Turn-off time: 440ns Turn-on time: 440ns Power: 1.5W Anzahl je Verpackung: 1 Stücke |
auf Bestellung 64 Stücke: Lieferzeit 7-14 Tag (e) |
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IR2233JPBF | INFINEON TECHNOLOGIES |
Category: MOSFET/IGBT driversDescription: IC: driver; IGBT three-phase bridge,MOSFET three-phase bridge Type of integrated circuit: driver Topology: IGBT three-phase bridge; MOSFET three-phase bridge Kind of integrated circuit: gate driver; high-/low-side Case: PLCC44 Output current: -420...200mA Number of channels: 6 Mounting: SMD Supply voltage: 10...20V DC Voltage class: 1.2kV Integrated circuit features: charge pump; dead time; integrated bootstrap functionality Kind of package: tube Operating temperature: -40...125°C Turn-off time: 700ns Turn-on time: 750ns Power: 2W Anzahl je Verpackung: 1 Stücke |
auf Bestellung 27 Stücke: Lieferzeit 7-14 Tag (e) |
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IR2301SPBF | INFINEON TECHNOLOGIES |
Category: MOSFET/IGBT driversDescription: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8 Type of integrated circuit: driver Case: SO8 Mounting: SMD Operating temperature: -40...125°C Kind of package: tube Power: 625mW Number of channels: 2 Supply voltage: 5...20V DC Voltage class: 600V Output current: -0.35...0.2A Integrated circuit features: charge pump; integrated bootstrap functionality Kind of integrated circuit: gate driver; high-/low-side Topology: MOSFET half-bridge Turn-off time: 200ns Turn-on time: 220ns Anzahl je Verpackung: 1 Stücke |
auf Bestellung 120 Stücke: Lieferzeit 7-14 Tag (e) |
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IR2302SPBF | INFINEON TECHNOLOGIES |
Category: MOSFET/IGBT driversDescription: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8 Type of integrated circuit: driver Topology: MOSFET half-bridge Kind of integrated circuit: gate driver; high-/low-side Case: SO8 Output current: -0.35...0.2A Number of channels: 2 Supply voltage: 5...20V DC Mounting: SMD Operating temperature: -40...125°C Kind of package: tube Voltage class: 600V Turn-off time: 200ns Turn-on time: 750ns Power: 625mW Anzahl je Verpackung: 1 Stücke |
auf Bestellung 9 Stücke: Lieferzeit 7-14 Tag (e) |
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IR2304SPBF | INFINEON TECHNOLOGIES |
Category: MOSFET/IGBT driversDescription: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8 Type of integrated circuit: driver Topology: MOSFET half-bridge Kind of integrated circuit: gate driver; high-/low-side Case: SO8 Output current: -130...60mA Number of channels: 2 Supply voltage: 10...20V DC Mounting: SMD Operating temperature: -40...125°C Kind of package: tube Voltage class: 600V Turn-off time: 0.22µs Turn-on time: 220ns Power: 625mW Anzahl je Verpackung: 1 Stücke |
auf Bestellung 98 Stücke: Lieferzeit 7-14 Tag (e) |
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IR4427PBF | INFINEON TECHNOLOGIES |
Category: MOSFET/IGBT driversDescription: IC: driver; IGBT half-bridge,MOSFET half-bridge; DIP8; -1.5÷1.5A Type of integrated circuit: driver Topology: IGBT half-bridge; MOSFET half-bridge Kind of integrated circuit: gate driver; low-side Case: DIP8 Output current: -1.5...1.5A Power: 1W Number of channels: 2 Supply voltage: 6...20V DC Mounting: THT Operating temperature: -40...125°C Kind of package: tube Turn-on time: 85ns Turn-off time: 65ns Anzahl je Verpackung: 1 Stücke |
auf Bestellung 86 Stücke: Lieferzeit 7-14 Tag (e) |
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IR4427STRPBF | INFINEON TECHNOLOGIES |
Category: MOSFET/IGBT driversDescription: IC: driver; IGBT half-bridge,MOSFET half-bridge; SO8; -1.5÷1.5A Type of integrated circuit: driver Topology: IGBT half-bridge; MOSFET half-bridge Kind of integrated circuit: gate driver; low-side Case: SO8 Output current: -1.5...1.5A Power: 625mW Number of channels: 2 Supply voltage: 6...20V DC Mounting: SMD Operating temperature: -40...125°C Kind of package: reel; tape Turn-on time: 85ns Turn-off time: 65ns Anzahl je Verpackung: 1 Stücke |
auf Bestellung 2436 Stücke: Lieferzeit 7-14 Tag (e) |
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IRF100B201 | INFINEON TECHNOLOGIES |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 100V; 136A; Idm: 690A; 441W; TO220AB Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 100V Drain current: 136A Pulsed drain current: 690A Power dissipation: 441W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 4.2mΩ Mounting: THT Gate charge: 255nC Kind of package: tube Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 1028 Stücke: Lieferzeit 7-14 Tag (e) |
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IRF100B202 | INFINEON TECHNOLOGIES |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 100V; 68A; 221W; TO220AB Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 100V Drain current: 68A Power dissipation: 221W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 8.6mΩ Mounting: THT Gate charge: 77nC Kind of package: tube Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 178 Stücke: Lieferzeit 7-14 Tag (e) |
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IRF1010EPBF | INFINEON TECHNOLOGIES |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 60V; 81A; 170W; TO220AB Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 60V Drain current: 81A Power dissipation: 170W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 12mΩ Mounting: THT Gate charge: 86.6nC Kind of package: tube Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 216 Stücke: Lieferzeit 7-14 Tag (e) |
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IRF1010ESTRLPBF | INFINEON TECHNOLOGIES |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 60V; 59A; Idm: 330A; 200W; D2PAK Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 60V Drain current: 59A Power dissipation: 200W Case: D2PAK Gate-source voltage: ±20V On-state resistance: 12mΩ Mounting: SMD Kind of channel: enhancement Pulsed drain current: 330A Anzahl je Verpackung: 1 Stücke |
auf Bestellung 275 Stücke: Lieferzeit 7-14 Tag (e) |
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IRF1010EZPBF | INFINEON TECHNOLOGIES |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 60V; 84A; 140W; TO220AB Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 60V Drain current: 84A Power dissipation: 140W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 8.5mΩ Mounting: THT Gate charge: 58nC Kind of package: tube Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 22 Stücke: Lieferzeit 7-14 Tag (e) |
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IRF1010NSTRLPBF | INFINEON TECHNOLOGIES |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 55V; 60A; 180W; D2PAK Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 55V Drain current: 60A Power dissipation: 180W Case: D2PAK Gate-source voltage: ±20V On-state resistance: 11mΩ Mounting: SMD Gate charge: 0.12µC Kind of package: reel Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 775 Stücke: Lieferzeit 7-14 Tag (e) |
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IRF1018EPBF | INFINEON TECHNOLOGIES |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 60V; 79A; 110W; TO220AB Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 60V Drain current: 79A Power dissipation: 110W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 8.4mΩ Mounting: THT Kind of channel: enhancement Kind of package: tube Gate charge: 46nC Anzahl je Verpackung: 1 Stücke |
auf Bestellung 611 Stücke: Lieferzeit 7-14 Tag (e) |
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IRF1018ESTRLPBF | INFINEON TECHNOLOGIES |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 60V; 56A; Idm: 315A; 110W; D2PAK Case: D2PAK Mounting: SMD Polarisation: unipolar Drain-source voltage: 60V Drain current: 56A Pulsed drain current: 315A On-state resistance: 8.4mΩ Type of transistor: N-MOSFET Power dissipation: 110W Technology: HEXFET® Gate-source voltage: ±20V Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 197 Stücke: Lieferzeit 7-14 Tag (e) |
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IRF1104PBF | INFINEON TECHNOLOGIES |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 40V; 100A; 170W; TO220AB Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 40V Drain current: 100A Power dissipation: 170W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 9mΩ Mounting: THT Gate charge: 62nC Kind of package: tube Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 78 Stücke: Lieferzeit 7-14 Tag (e) |
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| IRF1310NPBF | INFINEON TECHNOLOGIES |
IRF1310NPBF THT N channel transistors |
auf Bestellung 305 Stücke: Lieferzeit 7-14 Tag (e) |
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| IRF1324PBF | INFINEON TECHNOLOGIES |
IRF1324PBF THT N channel transistors |
auf Bestellung 90 Stücke: Lieferzeit 7-14 Tag (e) |
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IRF135B203 | INFINEON TECHNOLOGIES |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 135V; 91A; Idm: 512A; 441W; TO220AB Case: TO220AB Kind of channel: enhancement Mounting: THT Technology: HEXFET® Kind of package: tube Type of transistor: N-MOSFET Polarisation: unipolar Gate charge: 0.27µC On-state resistance: 8.4mΩ Gate-source voltage: ±20V Drain current: 91A Drain-source voltage: 135V Power dissipation: 441W Pulsed drain current: 512A Anzahl je Verpackung: 1 Stücke |
auf Bestellung 50 Stücke: Lieferzeit 7-14 Tag (e) |
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IRF1404LPBF | INFINEON TECHNOLOGIES |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 40V; 162A; 200W; TO262 Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 40V Drain current: 162A Power dissipation: 200W Case: TO262 Mounting: THT Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| IR21094STRPBF |
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Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO14
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO14
Output current: -250...120mA
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Voltage class: 600V
Turn-off time: 200ns
Turn-on time: 750ns
Power: 1W
Anzahl je Verpackung: 1 Stücke
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO14
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO14
Output current: -250...120mA
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Voltage class: 600V
Turn-off time: 200ns
Turn-on time: 750ns
Power: 1W
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1579 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 38+ | 1.92 EUR |
| 50+ | 1.44 EUR |
| 54+ | 1.34 EUR |
| 57+ | 1.26 EUR |
| 100+ | 1.2 EUR |
| 250+ | 1.19 EUR |
| IR2109PBF |
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Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; DIP8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: DIP8
Output current: -250...120mA
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-off time: 200ns
Turn-on time: 750ns
Power: 1W
Anzahl je Verpackung: 1 Stücke
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; DIP8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: DIP8
Output current: -250...120mA
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-off time: 200ns
Turn-on time: 750ns
Power: 1W
Anzahl je Verpackung: 1 Stücke
auf Bestellung 51 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 21+ | 3.46 EUR |
| 28+ | 2.6 EUR |
| 30+ | 2.43 EUR |
| 50+ | 2.3 EUR |
| 100+ | 2.19 EUR |
| IR2109STRPBF |
![]() |
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Output current: -250...120mA
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Voltage class: 600V
Turn-off time: 200ns
Turn-on time: 750ns
Power: 625mW
Anzahl je Verpackung: 1 Stücke
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Output current: -250...120mA
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Voltage class: 600V
Turn-off time: 200ns
Turn-on time: 750ns
Power: 625mW
Anzahl je Verpackung: 1 Stücke
auf Bestellung 3719 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 55+ | 1.3 EUR |
| 65+ | 1.12 EUR |
| 71+ | 1.02 EUR |
| IR2110PBF |
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Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; 1.6W
Mounting: THT
Operating temperature: -40...125°C
Output current: -2...2A
Power: 1.6W
Number of channels: 2
Supply voltage: 10...20V DC
Turn-off time: 111ns
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Type of integrated circuit: driver
Case: DIP14
Voltage class: 500V
Kind of package: tube
Turn-on time: 145ns
Anzahl je Verpackung: 1 Stücke
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; 1.6W
Mounting: THT
Operating temperature: -40...125°C
Output current: -2...2A
Power: 1.6W
Number of channels: 2
Supply voltage: 10...20V DC
Turn-off time: 111ns
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Type of integrated circuit: driver
Case: DIP14
Voltage class: 500V
Kind of package: tube
Turn-on time: 145ns
Anzahl je Verpackung: 1 Stücke
auf Bestellung 190 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 22+ | 3.4 EUR |
| 24+ | 3 EUR |
| 28+ | 2.63 EUR |
| 29+ | 2.47 EUR |
| 50+ | 2.37 EUR |
| 100+ | 2.26 EUR |
| 250+ | 2.2 EUR |
| IR2110SPBF | ![]() |
![]() |
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; Ch: 2
Mounting: SMD
Operating temperature: -40...125°C
Output current: -2...2A
Power: 1.25W
Number of channels: 2
Supply voltage: 10...20V DC
Turn-off time: 111ns
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Type of integrated circuit: driver
Case: SO16-W
Voltage class: 500V
Kind of package: tube
Turn-on time: 145ns
Anzahl je Verpackung: 1 Stücke
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; Ch: 2
Mounting: SMD
Operating temperature: -40...125°C
Output current: -2...2A
Power: 1.25W
Number of channels: 2
Supply voltage: 10...20V DC
Turn-off time: 111ns
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Type of integrated circuit: driver
Case: SO16-W
Voltage class: 500V
Kind of package: tube
Turn-on time: 145ns
Anzahl je Verpackung: 1 Stücke
auf Bestellung 310 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 18+ | 4.1 EUR |
| 23+ | 3.13 EUR |
| 25+ | 2.86 EUR |
| 45+ | 2.69 EUR |
| 135+ | 2.37 EUR |
| 270+ | 2.19 EUR |
| 540+ | 2 EUR |
| IR2110STRPBF | ![]() |
![]() |
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; Ch: 2
Mounting: SMD
Operating temperature: -40...125°C
Output current: -2...2A
Power: 1.25W
Number of channels: 2
Supply voltage: 10...20V DC
Turn-off time: 111ns
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Type of integrated circuit: driver
Case: SO16-W
Voltage class: 500V
Kind of package: reel; tape
Turn-on time: 145ns
Anzahl je Verpackung: 1 Stücke
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; Ch: 2
Mounting: SMD
Operating temperature: -40...125°C
Output current: -2...2A
Power: 1.25W
Number of channels: 2
Supply voltage: 10...20V DC
Turn-off time: 111ns
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Type of integrated circuit: driver
Case: SO16-W
Voltage class: 500V
Kind of package: reel; tape
Turn-on time: 145ns
Anzahl je Verpackung: 1 Stücke
auf Bestellung 248 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 23+ | 3.2 EUR |
| 25+ | 2.9 EUR |
| 30+ | 2.39 EUR |
| 33+ | 2.2 EUR |
| 50+ | 2.09 EUR |
| 100+ | 1.99 EUR |
| 250+ | 1.87 EUR |
| IR2111PBF | ![]() |
![]() |
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; DIP8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: DIP8
Output current: -420...200mA
Power: 1W
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 830ns
Turn-off time: 190ns
Anzahl je Verpackung: 1 Stücke
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; DIP8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: DIP8
Output current: -420...200mA
Power: 1W
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 830ns
Turn-off time: 190ns
Anzahl je Verpackung: 1 Stücke
auf Bestellung 99 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 24+ | 3.09 EUR |
| 31+ | 2.36 EUR |
| 34+ | 2.16 EUR |
| IR2111SPBF | ![]() |
![]() |
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Output current: -420...200mA
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-off time: 190ns
Turn-on time: 830ns
Power: 625mW
Anzahl je Verpackung: 1 Stücke
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Output current: -420...200mA
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-off time: 190ns
Turn-on time: 830ns
Power: 625mW
Anzahl je Verpackung: 1 Stücke
auf Bestellung 112 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 50+ | 1.44 EUR |
| IR2112PBF | ![]() |
![]() |
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; 1.6W
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: DIP14
Output current: -420...200mA
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-off time: 145ns
Turn-on time: 205ns
Power: 1.6W
Anzahl je Verpackung: 1 Stücke
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; 1.6W
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: DIP14
Output current: -420...200mA
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-off time: 145ns
Turn-on time: 205ns
Power: 1.6W
Anzahl je Verpackung: 1 Stücke
auf Bestellung 52 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 16+ | 4.5 EUR |
| 21+ | 3.42 EUR |
| 25+ | 3.17 EUR |
| 50+ | 3.03 EUR |
| 100+ | 2.9 EUR |
| 500+ | 2.86 EUR |
| IR2112SPBF | ![]() |
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Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; Ch: 2
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO16-W
Output current: -420...200mA
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-off time: 145ns
Turn-on time: 205ns
Power: 1.25W
Anzahl je Verpackung: 1 Stücke
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; Ch: 2
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO16-W
Output current: -420...200mA
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-off time: 145ns
Turn-on time: 205ns
Power: 1.25W
Anzahl je Verpackung: 1 Stücke
auf Bestellung 44 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 26+ | 2.76 EUR |
| 45+ | 2.69 EUR |
| IR2112STRPBF |
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Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; Ch: 2
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO16-W
Output current: -420...200mA
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Voltage class: 600V
Turn-off time: 145ns
Turn-on time: 205ns
Power: 1.25W
Anzahl je Verpackung: 1 Stücke
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; Ch: 2
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO16-W
Output current: -420...200mA
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Voltage class: 600V
Turn-off time: 145ns
Turn-on time: 205ns
Power: 1.25W
Anzahl je Verpackung: 1 Stücke
auf Bestellung 747 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 25+ | 2.89 EUR |
| 34+ | 2.14 EUR |
| 35+ | 2.06 EUR |
| IR2113PBF | ![]() |
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Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; 1.6W
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: DIP14
Output current: -2...2A
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-off time: 111ns
Turn-on time: 145ns
Power: 1.6W
Anzahl je Verpackung: 1 Stücke
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; 1.6W
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: DIP14
Output current: -2...2A
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-off time: 111ns
Turn-on time: 145ns
Power: 1.6W
Anzahl je Verpackung: 1 Stücke
auf Bestellung 185 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 24+ | 3.06 EUR |
| 25+ | 2.89 EUR |
| 29+ | 2.52 EUR |
| 31+ | 2.37 EUR |
| 100+ | 2.29 EUR |
| IR2113SPBF | ![]() |
![]() |
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; Ch: 2
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO16-W
Output current: -2...2A
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-off time: 111ns
Turn-on time: 145ns
Power: 1.25W
Anzahl je Verpackung: 1 Stücke
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; Ch: 2
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO16-W
Output current: -2...2A
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-off time: 111ns
Turn-on time: 145ns
Power: 1.25W
Anzahl je Verpackung: 1 Stücke
auf Bestellung 69 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 16+ | 4.7 EUR |
| 17+ | 4.28 EUR |
| 20+ | 3.65 EUR |
| 25+ | 3.25 EUR |
| 35+ | 3.15 EUR |
| 45+ | 3.06 EUR |
| 225+ | 2.99 EUR |
| IR2113STRPBF |
![]() |
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; Ch: 2
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO16-W
Output current: -2...2A
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Voltage class: 600V
Turn-off time: 111ns
Turn-on time: 145ns
Power: 1.25W
Anzahl je Verpackung: 1 Stücke
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; Ch: 2
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO16-W
Output current: -2...2A
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Voltage class: 600V
Turn-off time: 111ns
Turn-on time: 145ns
Power: 1.25W
Anzahl je Verpackung: 1 Stücke
auf Bestellung 886 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 26+ | 2.82 EUR |
| 28+ | 2.59 EUR |
| 30+ | 2.45 EUR |
| 32+ | 2.25 EUR |
| 50+ | 2.1 EUR |
| 100+ | 1.99 EUR |
| 125+ | 1.96 EUR |
| IR2114SSPBF |
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Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT half-bridge; high-/low-side,gate driver; SSOP24
Mounting: SMD
Operating temperature: -40...125°C
Output current: -1.5...1A
Power: 1.5W
Number of channels: 2
Supply voltage: 10.4...20V DC
Turn-off time: 440ns
Topology: IGBT half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Type of integrated circuit: driver
Case: SSOP24
Voltage class: 0.6/1.2kV
Turn-on time: 440ns
Anzahl je Verpackung: 1 Stücke
Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT half-bridge; high-/low-side,gate driver; SSOP24
Mounting: SMD
Operating temperature: -40...125°C
Output current: -1.5...1A
Power: 1.5W
Number of channels: 2
Supply voltage: 10.4...20V DC
Turn-off time: 440ns
Topology: IGBT half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Type of integrated circuit: driver
Case: SSOP24
Voltage class: 0.6/1.2kV
Turn-on time: 440ns
Anzahl je Verpackung: 1 Stücke
auf Bestellung 30 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 9+ | 8.59 EUR |
| IR2117PBF |
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Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,gate driver; DIP8; 1W
Mounting: THT
Operating temperature: -40...125°C
Output current: -420...200mA
Power: 1W
Number of channels: 1
Supply voltage: 10...20V DC
Turn-off time: 105ns
Topology: single transistor
Kind of integrated circuit: gate driver; high-side
Type of integrated circuit: driver
Case: DIP8
Voltage class: 600V
Kind of package: tube
Turn-on time: 125ns
Anzahl je Verpackung: 1 Stücke
Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,gate driver; DIP8; 1W
Mounting: THT
Operating temperature: -40...125°C
Output current: -420...200mA
Power: 1W
Number of channels: 1
Supply voltage: 10...20V DC
Turn-off time: 105ns
Topology: single transistor
Kind of integrated circuit: gate driver; high-side
Type of integrated circuit: driver
Case: DIP8
Voltage class: 600V
Kind of package: tube
Turn-on time: 125ns
Anzahl je Verpackung: 1 Stücke
auf Bestellung 233 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 23+ | 3.12 EUR |
| 27+ | 2.7 EUR |
| 30+ | 2.4 EUR |
| 31+ | 2.32 EUR |
| 50+ | 2.2 EUR |
| 250+ | 2.16 EUR |
| IR2117SPBF | ![]() |
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Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,gate driver; SO8; 625mW
Mounting: SMD
Operating temperature: -40...125°C
Output current: -420...200mA
Power: 625mW
Number of channels: 1
Supply voltage: 10...20V DC
Turn-off time: 105ns
Topology: single transistor
Kind of integrated circuit: gate driver; high-side
Type of integrated circuit: driver
Case: SO8
Voltage class: 600V
Kind of package: tube
Turn-on time: 125ns
Anzahl je Verpackung: 1 Stücke
Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,gate driver; SO8; 625mW
Mounting: SMD
Operating temperature: -40...125°C
Output current: -420...200mA
Power: 625mW
Number of channels: 1
Supply voltage: 10...20V DC
Turn-off time: 105ns
Topology: single transistor
Kind of integrated circuit: gate driver; high-side
Type of integrated circuit: driver
Case: SO8
Voltage class: 600V
Kind of package: tube
Turn-on time: 125ns
Anzahl je Verpackung: 1 Stücke
auf Bestellung 223 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 40+ | 1.83 EUR |
| 50+ | 1.44 EUR |
| 53+ | 1.36 EUR |
| 57+ | 1.26 EUR |
| IR2118SPBF | ![]() |
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Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,gate driver; SO8; 625mW
Mounting: SMD
Operating temperature: -40...125°C
Output current: -420...200mA
Power: 625mW
Number of channels: 1
Supply voltage: 10...20V DC
Turn-off time: 105ns
Topology: single transistor
Kind of integrated circuit: gate driver; high-side
Type of integrated circuit: driver
Case: SO8
Voltage class: 600V
Kind of package: tube
Turn-on time: 125ns
Anzahl je Verpackung: 1 Stücke
Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,gate driver; SO8; 625mW
Mounting: SMD
Operating temperature: -40...125°C
Output current: -420...200mA
Power: 625mW
Number of channels: 1
Supply voltage: 10...20V DC
Turn-off time: 105ns
Topology: single transistor
Kind of integrated circuit: gate driver; high-side
Type of integrated circuit: driver
Case: SO8
Voltage class: 600V
Kind of package: tube
Turn-on time: 125ns
Anzahl je Verpackung: 1 Stücke
auf Bestellung 41 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 41+ | 1.74 EUR |
| IR2121PBF |
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Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; high-/low-side,gate driver; DIP8; -2÷1A; 1W; Ch: 1; 5V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-/low-side
Case: DIP8
Output current: -2...1A
Power: 1W
Number of channels: 1
Supply voltage: 12...18V DC
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 5V
Turn-on time: 150ns
Turn-off time: 105ns
Anzahl je Verpackung: 1 Stücke
Category: MOSFET/IGBT drivers
Description: IC: driver; high-/low-side,gate driver; DIP8; -2÷1A; 1W; Ch: 1; 5V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-/low-side
Case: DIP8
Output current: -2...1A
Power: 1W
Number of channels: 1
Supply voltage: 12...18V DC
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 5V
Turn-on time: 150ns
Turn-off time: 105ns
Anzahl je Verpackung: 1 Stücke
auf Bestellung 164 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 26+ | 2.76 EUR |
| 28+ | 2.57 EUR |
| IR2125PBF |
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Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,gate driver; DIP8; -2÷1A
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-side
Output current: -2...1A
Mounting: THT
Number of channels: 1
Operating temperature: -40...125°C
Case: DIP8
Supply voltage: 12...18V DC
Kind of package: tube
Voltage class: 500V
Topology: single transistor
Turn-off time: 150ns
Turn-on time: 150ns
Power: 1W
Anzahl je Verpackung: 1 Stücke
Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,gate driver; DIP8; -2÷1A
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-side
Output current: -2...1A
Mounting: THT
Number of channels: 1
Operating temperature: -40...125°C
Case: DIP8
Supply voltage: 12...18V DC
Kind of package: tube
Voltage class: 500V
Topology: single transistor
Turn-off time: 150ns
Turn-on time: 150ns
Power: 1W
Anzahl je Verpackung: 1 Stücke
auf Bestellung 197 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 19+ | 3.86 EUR |
| 20+ | 3.58 EUR |
| 25+ | 2.95 EUR |
| 27+ | 2.69 EUR |
| 50+ | 2.53 EUR |
| 100+ | 2.43 EUR |
| IR2125SPBF |
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Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,gate driver; SO16; -2÷1A
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-side
Output current: -2...1A
Mounting: SMD
Number of channels: 1
Operating temperature: -40...125°C
Case: SO16
Supply voltage: 12...18V DC
Kind of package: tube
Voltage class: 500V
Topology: single transistor
Turn-off time: 150ns
Turn-on time: 150ns
Power: 1.25W
Anzahl je Verpackung: 1 Stücke
Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,gate driver; SO16; -2÷1A
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-side
Output current: -2...1A
Mounting: SMD
Number of channels: 1
Operating temperature: -40...125°C
Case: SO16
Supply voltage: 12...18V DC
Kind of package: tube
Voltage class: 500V
Topology: single transistor
Turn-off time: 150ns
Turn-on time: 150ns
Power: 1.25W
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1418 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 26+ | 2.76 EUR |
| 28+ | 2.65 EUR |
| 45+ | 2.53 EUR |
| 90+ | 2.42 EUR |
| 270+ | 2.36 EUR |
| IR21271PBF | ![]() |
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Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; high-side,gate driver; DIP8; -420÷200mA; 1W; Ch: 1; 600V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-side
Case: DIP8
Output current: -420...200mA
Power: 1W
Number of channels: 1
Supply voltage: 9...20V DC
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 150ns
Turn-off time: 150ns
Anzahl je Verpackung: 1 Stücke
Category: MOSFET/IGBT drivers
Description: IC: driver; high-side,gate driver; DIP8; -420÷200mA; 1W; Ch: 1; 600V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-side
Case: DIP8
Output current: -420...200mA
Power: 1W
Number of channels: 1
Supply voltage: 9...20V DC
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 150ns
Turn-off time: 150ns
Anzahl je Verpackung: 1 Stücke
auf Bestellung 44 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 24+ | 3.06 EUR |
| 27+ | 2.69 EUR |
| 29+ | 2.47 EUR |
| 30+ | 2.42 EUR |
| IR21271SPBF |
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Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; high-side,gate driver; SO8; -420÷200mA; 625mW; Ch: 1
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-side
Case: SO8
Output current: -420...200mA
Power: 625mW
Number of channels: 1
Supply voltage: 9...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 150ns
Turn-off time: 150ns
Anzahl je Verpackung: 1 Stücke
Category: MOSFET/IGBT drivers
Description: IC: driver; high-side,gate driver; SO8; -420÷200mA; 625mW; Ch: 1
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-side
Case: SO8
Output current: -420...200mA
Power: 625mW
Number of channels: 1
Supply voltage: 9...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 150ns
Turn-off time: 150ns
Anzahl je Verpackung: 1 Stücke
auf Bestellung 17 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 17+ | 4.2 EUR |
| 95+ | 1.93 EUR |
| 285+ | 1.8 EUR |
| IR2127PBF | ![]() |
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Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; high-side,gate driver; DIP8; -420÷200mA; 1W; Ch: 1; 600V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-side
Case: DIP8
Output current: -420...200mA
Power: 1W
Number of channels: 1
Supply voltage: 12...20V DC
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 0.2µs
Turn-off time: 150ns
Anzahl je Verpackung: 1 Stücke
Category: MOSFET/IGBT drivers
Description: IC: driver; high-side,gate driver; DIP8; -420÷200mA; 1W; Ch: 1; 600V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-side
Case: DIP8
Output current: -420...200mA
Power: 1W
Number of channels: 1
Supply voltage: 12...20V DC
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 0.2µs
Turn-off time: 150ns
Anzahl je Verpackung: 1 Stücke
auf Bestellung 111 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 28+ | 2.65 EUR |
| 30+ | 2.42 EUR |
| 31+ | 2.37 EUR |
| IR2127SPBF |
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Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; high-side,gate driver; SO8; -420÷200mA; 625mW; Ch: 1
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-side
Case: SO8
Output current: -420...200mA
Power: 625mW
Number of channels: 1
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 0.2µs
Turn-off time: 150ns
Anzahl je Verpackung: 1 Stücke
Category: MOSFET/IGBT drivers
Description: IC: driver; high-side,gate driver; SO8; -420÷200mA; 625mW; Ch: 1
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-side
Case: SO8
Output current: -420...200mA
Power: 625mW
Number of channels: 1
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 0.2µs
Turn-off time: 150ns
Anzahl je Verpackung: 1 Stücke
auf Bestellung 224 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 24+ | 3 EUR |
| 32+ | 2.29 EUR |
| 95+ | 1.96 EUR |
| 285+ | 1.8 EUR |
| 570+ | 1.7 EUR |
| 1045+ | 1.62 EUR |
| IR2128SPBF |
![]() |
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; high-side,gate driver; SO8; -420÷200mA; 625mW; Ch: 1
Type of integrated circuit: driver
Mounting: SMD
Case: SO8
Kind of package: tube
Operating temperature: -40...125°C
Output current: -420...200mA
Turn-off time: 150ns
Turn-on time: 0.2µs
Power: 625mW
Number of channels: 1
Supply voltage: 12...20V DC
Voltage class: 600V
Kind of integrated circuit: gate driver; high-side
Anzahl je Verpackung: 1 Stücke
Category: MOSFET/IGBT drivers
Description: IC: driver; high-side,gate driver; SO8; -420÷200mA; 625mW; Ch: 1
Type of integrated circuit: driver
Mounting: SMD
Case: SO8
Kind of package: tube
Operating temperature: -40...125°C
Output current: -420...200mA
Turn-off time: 150ns
Turn-on time: 0.2µs
Power: 625mW
Number of channels: 1
Supply voltage: 12...20V DC
Voltage class: 600V
Kind of integrated circuit: gate driver; high-side
Anzahl je Verpackung: 1 Stücke
auf Bestellung 86 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 28+ | 2.63 EUR |
| 35+ | 2.07 EUR |
| IR2130SPBF | ![]() |
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Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT three-phase bridge,MOSFET three-phase bridge
Type of integrated circuit: driver
Topology: IGBT three-phase bridge; MOSFET three-phase bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO28-W
Output current: -420...200mA
Number of channels: 6
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-off time: 475ns
Turn-on time: 675ns
Power: 1.6W
Anzahl je Verpackung: 1 Stücke
Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT three-phase bridge,MOSFET three-phase bridge
Type of integrated circuit: driver
Topology: IGBT three-phase bridge; MOSFET three-phase bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO28-W
Output current: -420...200mA
Number of channels: 6
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-off time: 475ns
Turn-on time: 675ns
Power: 1.6W
Anzahl je Verpackung: 1 Stücke
auf Bestellung 28 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 10+ | 7.18 EUR |
| 13+ | 5.79 EUR |
| IR2132JPBF | ![]() |
![]() |
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT three-phase bridge,MOSFET three-phase bridge
Type of integrated circuit: driver
Topology: IGBT three-phase bridge; MOSFET three-phase bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: PLCC44
Output current: -420...200mA
Number of channels: 6
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-off time: 475ns
Turn-on time: 675ns
Power: 2W
Anzahl je Verpackung: 1 Stücke
Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT three-phase bridge,MOSFET three-phase bridge
Type of integrated circuit: driver
Topology: IGBT three-phase bridge; MOSFET three-phase bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: PLCC44
Output current: -420...200mA
Number of channels: 6
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-off time: 475ns
Turn-on time: 675ns
Power: 2W
Anzahl je Verpackung: 1 Stücke
auf Bestellung 15 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 12+ | 6.38 EUR |
| 27+ | 5.55 EUR |
| IR2132SPBF | ![]() |
![]() |
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT three-phase bridge,MOSFET three-phase bridge
Type of integrated circuit: driver
Topology: IGBT three-phase bridge; MOSFET three-phase bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO28-W
Output current: -420...200mA
Number of channels: 6
Mounting: SMD
Supply voltage: 10...20V DC
Voltage class: 600V
Kind of package: tube
Operating temperature: -40...125°C
Turn-off time: 475ns
Turn-on time: 675ns
Power: 1.6W
Anzahl je Verpackung: 1 Stücke
Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT three-phase bridge,MOSFET three-phase bridge
Type of integrated circuit: driver
Topology: IGBT three-phase bridge; MOSFET three-phase bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO28-W
Output current: -420...200mA
Number of channels: 6
Mounting: SMD
Supply voltage: 10...20V DC
Voltage class: 600V
Kind of package: tube
Operating temperature: -40...125°C
Turn-off time: 475ns
Turn-on time: 675ns
Power: 1.6W
Anzahl je Verpackung: 1 Stücke
auf Bestellung 25 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 10+ | 7.38 EUR |
| 13+ | 5.91 EUR |
| IR2133SPBF |
![]() |
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT three-phase bridge,MOSFET three-phase bridge
Type of integrated circuit: driver
Topology: IGBT three-phase bridge; MOSFET three-phase bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO28-W
Output current: -420...200mA
Number of channels: 6
Mounting: SMD
Supply voltage: 10...20V DC
Voltage class: 0.6/1.2kV
Kind of package: tube
Operating temperature: -40...125°C
Turn-off time: 700ns
Turn-on time: 750ns
Power: 1.6W
Anzahl je Verpackung: 1 Stücke
Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT three-phase bridge,MOSFET three-phase bridge
Type of integrated circuit: driver
Topology: IGBT three-phase bridge; MOSFET three-phase bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO28-W
Output current: -420...200mA
Number of channels: 6
Mounting: SMD
Supply voltage: 10...20V DC
Voltage class: 0.6/1.2kV
Kind of package: tube
Operating temperature: -40...125°C
Turn-off time: 700ns
Turn-on time: 750ns
Power: 1.6W
Anzahl je Verpackung: 1 Stücke
auf Bestellung 14 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 8+ | 9.61 EUR |
| 9+ | 8.65 EUR |
| 10+ | 7.64 EUR |
| 25+ | 7.26 EUR |
| IR2135JPBF |
![]() |
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT three-phase bridge,MOSFET three-phase bridge
Type of integrated circuit: driver
Topology: IGBT three-phase bridge; MOSFET three-phase bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: PLCC44
Output current: -420...200mA
Number of channels: 6
Mounting: SMD
Supply voltage: 10...20V DC
Voltage class: 0.6/1.2kV
Kind of package: tube
Operating temperature: -40...125°C
Turn-off time: 700ns
Turn-on time: 750ns
Power: 2W
Anzahl je Verpackung: 1 Stücke
Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT three-phase bridge,MOSFET three-phase bridge
Type of integrated circuit: driver
Topology: IGBT three-phase bridge; MOSFET three-phase bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: PLCC44
Output current: -420...200mA
Number of channels: 6
Mounting: SMD
Supply voltage: 10...20V DC
Voltage class: 0.6/1.2kV
Kind of package: tube
Operating temperature: -40...125°C
Turn-off time: 700ns
Turn-on time: 750ns
Power: 2W
Anzahl je Verpackung: 1 Stücke
auf Bestellung 20 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 5+ | 14.41 EUR |
| 6+ | 13 EUR |
| 10+ | 11.43 EUR |
| 27+ | 10.42 EUR |
| IR2136SPBF |
![]() |
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT three-phase bridge,MOSFET three-phase bridge
Type of integrated circuit: driver
Topology: IGBT three-phase bridge; MOSFET three-phase bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO28-W
Output current: -0.35...0.2A
Number of channels: 6
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-off time: 380ns
Turn-on time: 0.4µs
Power: 1.6W
Anzahl je Verpackung: 1 Stücke
Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT three-phase bridge,MOSFET three-phase bridge
Type of integrated circuit: driver
Topology: IGBT three-phase bridge; MOSFET three-phase bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO28-W
Output current: -0.35...0.2A
Number of channels: 6
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-off time: 380ns
Turn-on time: 0.4µs
Power: 1.6W
Anzahl je Verpackung: 1 Stücke
auf Bestellung 31 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 10+ | 7.19 EUR |
| IR2153SPBF | ![]() |
![]() |
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Power: 625mW
Mounting: SMD
Operating temperature: -40...125°C
Turn-off time: 40ns
Turn-on time: 80ns
Number of channels: 2
Supply voltage: 10...15.6V DC
Integrated circuit features: dead time; front end oscillator; integrated bootstrap functionality
Voltage class: 600V
Case: SO8
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-/low-side
Topology: MOSFET half-bridge
Kind of package: tube
Anzahl je Verpackung: 1 Stücke
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Power: 625mW
Mounting: SMD
Operating temperature: -40...125°C
Turn-off time: 40ns
Turn-on time: 80ns
Number of channels: 2
Supply voltage: 10...15.6V DC
Integrated circuit features: dead time; front end oscillator; integrated bootstrap functionality
Voltage class: 600V
Case: SO8
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-/low-side
Topology: MOSFET half-bridge
Kind of package: tube
Anzahl je Verpackung: 1 Stücke
auf Bestellung 700 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 40+ | 1.79 EUR |
| 46+ | 1.57 EUR |
| 50+ | 1.46 EUR |
| 95+ | 1.44 EUR |
| IR2181SPBF | ![]() |
![]() |
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Output current: -2.3...1.9A
Power: 625mW
Number of channels: 2
Supply voltage: 10...20V DC
Integrated circuit features: charge pump; integrated bootstrap functionality
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 180ns
Turn-off time: 0.22µs
Protection: undervoltage UVP
Anzahl je Verpackung: 1 Stücke
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Output current: -2.3...1.9A
Power: 625mW
Number of channels: 2
Supply voltage: 10...20V DC
Integrated circuit features: charge pump; integrated bootstrap functionality
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 180ns
Turn-off time: 0.22µs
Protection: undervoltage UVP
Anzahl je Verpackung: 1 Stücke
auf Bestellung 75 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 24+ | 3.09 EUR |
| IR21834SPBF |
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Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO14
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO14
Output current: -2.3...1.9A
Power: 1W
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 180ns
Turn-off time: 0.22µs
Anzahl je Verpackung: 1 Stücke
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO14
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO14
Output current: -2.3...1.9A
Power: 1W
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 180ns
Turn-off time: 0.22µs
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IR2183SPBF |
![]() |
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Output current: -2.3...1.9A
Power: 625mW
Number of channels: 2
Supply voltage: 10...20V DC
Integrated circuit features: charge pump; dead time; integrated bootstrap functionality
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 180ns
Turn-off time: 0.22µs
Protection: short circuit protection SCP; undervoltage UVP
Anzahl je Verpackung: 1 Stücke
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Output current: -2.3...1.9A
Power: 625mW
Number of channels: 2
Supply voltage: 10...20V DC
Integrated circuit features: charge pump; dead time; integrated bootstrap functionality
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 180ns
Turn-off time: 0.22µs
Protection: short circuit protection SCP; undervoltage UVP
Anzahl je Verpackung: 1 Stücke
auf Bestellung 63 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 23+ | 3.22 EUR |
| IR21844SPBF | ![]() |
![]() |
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO14
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO14
Output current: -2.3...1.9A
Power: 1W
Number of channels: 2
Supply voltage: 10...20V DC
Integrated circuit features: charge pump; dead time; integrated bootstrap functionality
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 680ns
Turn-off time: 270ns
Protection: short circuit protection SCP; undervoltage UVP
Anzahl je Verpackung: 1 Stücke
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO14
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO14
Output current: -2.3...1.9A
Power: 1W
Number of channels: 2
Supply voltage: 10...20V DC
Integrated circuit features: charge pump; dead time; integrated bootstrap functionality
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 680ns
Turn-off time: 270ns
Protection: short circuit protection SCP; undervoltage UVP
Anzahl je Verpackung: 1 Stücke
auf Bestellung 95 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 17+ | 4.45 EUR |
| 18+ | 4.02 EUR |
| 50+ | 3.55 EUR |
| 55+ | 3.53 EUR |
| 110+ | 3.32 EUR |
| 275+ | 3.03 EUR |
| 550+ | 2.82 EUR |
| IR2184PBF |
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Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; DIP8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: DIP8
Output current: -2.3...1.9A
Power: 1W
Number of channels: 2
Supply voltage: 10...20V DC
Integrated circuit features: charge pump; dead time; integrated bootstrap functionality
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 680ns
Turn-off time: 270ns
Protection: short circuit protection SCP; undervoltage UVP
Anzahl je Verpackung: 1 Stücke
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; DIP8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: DIP8
Output current: -2.3...1.9A
Power: 1W
Number of channels: 2
Supply voltage: 10...20V DC
Integrated circuit features: charge pump; dead time; integrated bootstrap functionality
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 680ns
Turn-off time: 270ns
Protection: short circuit protection SCP; undervoltage UVP
Anzahl je Verpackung: 1 Stücke
auf Bestellung 43 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 23+ | 3.13 EUR |
| 29+ | 2.52 EUR |
| 31+ | 2.36 EUR |
| 50+ | 2.26 EUR |
| 100+ | 2.16 EUR |
| 500+ | 2.07 EUR |
| IR2184SPBF | ![]() |
![]() |
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Output current: -2.3...1.9A
Power: 625mW
Number of channels: 2
Supply voltage: 10...20V DC
Integrated circuit features: charge pump; dead time; integrated bootstrap functionality
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 680ns
Turn-off time: 270ns
Protection: short circuit protection SCP; undervoltage UVP
Anzahl je Verpackung: 1 Stücke
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Output current: -2.3...1.9A
Power: 625mW
Number of channels: 2
Supply voltage: 10...20V DC
Integrated circuit features: charge pump; dead time; integrated bootstrap functionality
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 680ns
Turn-off time: 270ns
Protection: short circuit protection SCP; undervoltage UVP
Anzahl je Verpackung: 1 Stücke
auf Bestellung 97 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 21+ | 3.45 EUR |
| 23+ | 3.25 EUR |
| 26+ | 2.85 EUR |
| 29+ | 2.52 EUR |
| 50+ | 2.49 EUR |
| IR2184STRPBF |
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Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Output current: -2.3...1.9A
Power: 625mW
Number of channels: 2
Supply voltage: 10...20V DC
Integrated circuit features: charge pump; dead time; integrated bootstrap functionality
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Voltage class: 600V
Turn-on time: 680ns
Turn-off time: 270ns
Protection: short circuit protection SCP; undervoltage UVP
Anzahl je Verpackung: 1 Stücke
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Output current: -2.3...1.9A
Power: 625mW
Number of channels: 2
Supply voltage: 10...20V DC
Integrated circuit features: charge pump; dead time; integrated bootstrap functionality
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Voltage class: 600V
Turn-on time: 680ns
Turn-off time: 270ns
Protection: short circuit protection SCP; undervoltage UVP
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2379 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 26+ | 2.8 EUR |
| 29+ | 2.53 EUR |
| 31+ | 2.35 EUR |
| 32+ | 2.25 EUR |
| 100+ | 2 EUR |
| 250+ | 1.87 EUR |
| IR2214SSPBF |
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Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; 1.5W
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-/low-side
Output current: -1.5...1A
Number of channels: 2
Mounting: SMD
Case: SSOP24
Supply voltage: 10.4...20V DC
Voltage class: 0.6/1.2kV
Topology: MOSFET half-bridge
Operating temperature: -40...125°C
Turn-off time: 440ns
Turn-on time: 440ns
Power: 1.5W
Anzahl je Verpackung: 1 Stücke
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; 1.5W
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-/low-side
Output current: -1.5...1A
Number of channels: 2
Mounting: SMD
Case: SSOP24
Supply voltage: 10.4...20V DC
Voltage class: 0.6/1.2kV
Topology: MOSFET half-bridge
Operating temperature: -40...125°C
Turn-off time: 440ns
Turn-on time: 440ns
Power: 1.5W
Anzahl je Verpackung: 1 Stücke
auf Bestellung 64 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 11+ | 6.71 EUR |
| 13+ | 5.66 EUR |
| IR2233JPBF |
![]() |
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT three-phase bridge,MOSFET three-phase bridge
Type of integrated circuit: driver
Topology: IGBT three-phase bridge; MOSFET three-phase bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: PLCC44
Output current: -420...200mA
Number of channels: 6
Mounting: SMD
Supply voltage: 10...20V DC
Voltage class: 1.2kV
Integrated circuit features: charge pump; dead time; integrated bootstrap functionality
Kind of package: tube
Operating temperature: -40...125°C
Turn-off time: 700ns
Turn-on time: 750ns
Power: 2W
Anzahl je Verpackung: 1 Stücke
Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT three-phase bridge,MOSFET three-phase bridge
Type of integrated circuit: driver
Topology: IGBT three-phase bridge; MOSFET three-phase bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: PLCC44
Output current: -420...200mA
Number of channels: 6
Mounting: SMD
Supply voltage: 10...20V DC
Voltage class: 1.2kV
Integrated circuit features: charge pump; dead time; integrated bootstrap functionality
Kind of package: tube
Operating temperature: -40...125°C
Turn-off time: 700ns
Turn-on time: 750ns
Power: 2W
Anzahl je Verpackung: 1 Stücke
auf Bestellung 27 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 8+ | 9.3 EUR |
| IR2301SPBF |
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Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Case: SO8
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Power: 625mW
Number of channels: 2
Supply voltage: 5...20V DC
Voltage class: 600V
Output current: -0.35...0.2A
Integrated circuit features: charge pump; integrated bootstrap functionality
Kind of integrated circuit: gate driver; high-/low-side
Topology: MOSFET half-bridge
Turn-off time: 200ns
Turn-on time: 220ns
Anzahl je Verpackung: 1 Stücke
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Case: SO8
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Power: 625mW
Number of channels: 2
Supply voltage: 5...20V DC
Voltage class: 600V
Output current: -0.35...0.2A
Integrated circuit features: charge pump; integrated bootstrap functionality
Kind of integrated circuit: gate driver; high-/low-side
Topology: MOSFET half-bridge
Turn-off time: 200ns
Turn-on time: 220ns
Anzahl je Verpackung: 1 Stücke
auf Bestellung 120 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 35+ | 2.06 EUR |
| 46+ | 1.57 EUR |
| 51+ | 1.42 EUR |
| 54+ | 1.33 EUR |
| 95+ | 1.26 EUR |
| 190+ | 1.23 EUR |
| 1900+ | 1.13 EUR |
| IR2302SPBF |
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Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Output current: -0.35...0.2A
Number of channels: 2
Supply voltage: 5...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-off time: 200ns
Turn-on time: 750ns
Power: 625mW
Anzahl je Verpackung: 1 Stücke
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Output current: -0.35...0.2A
Number of channels: 2
Supply voltage: 5...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-off time: 200ns
Turn-on time: 750ns
Power: 625mW
Anzahl je Verpackung: 1 Stücke
auf Bestellung 9 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 9+ | 7.95 EUR |
| IR2304SPBF |
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Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Output current: -130...60mA
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-off time: 0.22µs
Turn-on time: 220ns
Power: 625mW
Anzahl je Verpackung: 1 Stücke
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Output current: -130...60mA
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-off time: 0.22µs
Turn-on time: 220ns
Power: 625mW
Anzahl je Verpackung: 1 Stücke
auf Bestellung 98 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 40+ | 1.83 EUR |
| 46+ | 1.57 EUR |
| 52+ | 1.4 EUR |
| 57+ | 1.26 EUR |
| IR4427PBF | ![]() |
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Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT half-bridge,MOSFET half-bridge; DIP8; -1.5÷1.5A
Type of integrated circuit: driver
Topology: IGBT half-bridge; MOSFET half-bridge
Kind of integrated circuit: gate driver; low-side
Case: DIP8
Output current: -1.5...1.5A
Power: 1W
Number of channels: 2
Supply voltage: 6...20V DC
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Turn-on time: 85ns
Turn-off time: 65ns
Anzahl je Verpackung: 1 Stücke
Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT half-bridge,MOSFET half-bridge; DIP8; -1.5÷1.5A
Type of integrated circuit: driver
Topology: IGBT half-bridge; MOSFET half-bridge
Kind of integrated circuit: gate driver; low-side
Case: DIP8
Output current: -1.5...1.5A
Power: 1W
Number of channels: 2
Supply voltage: 6...20V DC
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Turn-on time: 85ns
Turn-off time: 65ns
Anzahl je Verpackung: 1 Stücke
auf Bestellung 86 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 29+ | 2.52 EUR |
| 37+ | 1.96 EUR |
| 40+ | 1.82 EUR |
| 50+ | 1.79 EUR |
| IR4427STRPBF |
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Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT half-bridge,MOSFET half-bridge; SO8; -1.5÷1.5A
Type of integrated circuit: driver
Topology: IGBT half-bridge; MOSFET half-bridge
Kind of integrated circuit: gate driver; low-side
Case: SO8
Output current: -1.5...1.5A
Power: 625mW
Number of channels: 2
Supply voltage: 6...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Turn-on time: 85ns
Turn-off time: 65ns
Anzahl je Verpackung: 1 Stücke
Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT half-bridge,MOSFET half-bridge; SO8; -1.5÷1.5A
Type of integrated circuit: driver
Topology: IGBT half-bridge; MOSFET half-bridge
Kind of integrated circuit: gate driver; low-side
Case: SO8
Output current: -1.5...1.5A
Power: 625mW
Number of channels: 2
Supply voltage: 6...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Turn-on time: 85ns
Turn-off time: 65ns
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2436 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 45+ | 1.6 EUR |
| 54+ | 1.34 EUR |
| IRF100B201 |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 136A; Idm: 690A; 441W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 136A
Pulsed drain current: 690A
Power dissipation: 441W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 4.2mΩ
Mounting: THT
Gate charge: 255nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 136A; Idm: 690A; 441W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 136A
Pulsed drain current: 690A
Power dissipation: 441W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 4.2mΩ
Mounting: THT
Gate charge: 255nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1028 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 35+ | 2.07 EUR |
| 41+ | 1.77 EUR |
| 50+ | 1.56 EUR |
| 100+ | 1.47 EUR |
| 250+ | 1.32 EUR |
| 500+ | 1.23 EUR |
| 1000+ | 1.13 EUR |
| IRF100B202 |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 68A; 221W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 68A
Power dissipation: 221W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 8.6mΩ
Mounting: THT
Gate charge: 77nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 68A; 221W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 68A
Power dissipation: 221W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 8.6mΩ
Mounting: THT
Gate charge: 77nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 178 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 35+ | 2.09 EUR |
| 56+ | 1.29 EUR |
| 100+ | 1.14 EUR |
| 500+ | 1.04 EUR |
| IRF1010EPBF | ![]() |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 81A; 170W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 81A
Power dissipation: 170W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 12mΩ
Mounting: THT
Gate charge: 86.6nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 81A; 170W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 81A
Power dissipation: 170W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 12mΩ
Mounting: THT
Gate charge: 86.6nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 216 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 65+ | 1.12 EUR |
| 69+ | 1.04 EUR |
| 82+ | 0.87 EUR |
| 100+ | 0.78 EUR |
| 200+ | 0.7 EUR |
| 250+ | 0.68 EUR |
| 500+ | 0.66 EUR |
| IRF1010ESTRLPBF |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 59A; Idm: 330A; 200W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 59A
Power dissipation: 200W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 12mΩ
Mounting: SMD
Kind of channel: enhancement
Pulsed drain current: 330A
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 59A; Idm: 330A; 200W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 59A
Power dissipation: 200W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 12mΩ
Mounting: SMD
Kind of channel: enhancement
Pulsed drain current: 330A
Anzahl je Verpackung: 1 Stücke
auf Bestellung 275 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 42+ | 1.73 EUR |
| 49+ | 1.47 EUR |
| 58+ | 1.24 EUR |
| 100+ | 1.16 EUR |
| 250+ | 1.06 EUR |
| 500+ | 0.99 EUR |
| 800+ | 0.93 EUR |
| IRF1010EZPBF | ![]() |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 84A; 140W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 84A
Power dissipation: 140W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 8.5mΩ
Mounting: THT
Gate charge: 58nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 84A; 140W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 84A
Power dissipation: 140W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 8.5mΩ
Mounting: THT
Gate charge: 58nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 22 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 22+ | 3.25 EUR |
| 50+ | 1.43 EUR |
| 500+ | 0.64 EUR |
| 2000+ | 0.6 EUR |
| IRF1010NSTRLPBF |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 60A; 180W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 60A
Power dissipation: 180W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 11mΩ
Mounting: SMD
Gate charge: 0.12µC
Kind of package: reel
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 60A; 180W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 60A
Power dissipation: 180W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 11mΩ
Mounting: SMD
Gate charge: 0.12µC
Kind of package: reel
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 775 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 55+ | 1.32 EUR |
| 65+ | 1.1 EUR |
| 70+ | 1.03 EUR |
| 100+ | 0.92 EUR |
| 200+ | 0.89 EUR |
| 250+ | 0.86 EUR |
| 500+ | 0.83 EUR |
| IRF1018EPBF | ![]() |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 79A; 110W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 79A
Power dissipation: 110W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 8.4mΩ
Mounting: THT
Kind of channel: enhancement
Kind of package: tube
Gate charge: 46nC
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 79A; 110W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 79A
Power dissipation: 110W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 8.4mΩ
Mounting: THT
Kind of channel: enhancement
Kind of package: tube
Gate charge: 46nC
Anzahl je Verpackung: 1 Stücke
auf Bestellung 611 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 46+ | 1.57 EUR |
| 69+ | 1.04 EUR |
| 76+ | 0.95 EUR |
| 91+ | 0.79 EUR |
| 100+ | 0.73 EUR |
| 250+ | 0.66 EUR |
| 500+ | 0.61 EUR |
| IRF1018ESTRLPBF |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 56A; Idm: 315A; 110W; D2PAK
Case: D2PAK
Mounting: SMD
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 56A
Pulsed drain current: 315A
On-state resistance: 8.4mΩ
Type of transistor: N-MOSFET
Power dissipation: 110W
Technology: HEXFET®
Gate-source voltage: ±20V
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 56A; Idm: 315A; 110W; D2PAK
Case: D2PAK
Mounting: SMD
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 56A
Pulsed drain current: 315A
On-state resistance: 8.4mΩ
Type of transistor: N-MOSFET
Power dissipation: 110W
Technology: HEXFET®
Gate-source voltage: ±20V
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 197 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 43+ | 1.69 EUR |
| 51+ | 1.42 EUR |
| 57+ | 1.27 EUR |
| 69+ | 1.04 EUR |
| 100+ | 1 EUR |
| 800+ | 0.93 EUR |
| IRF1104PBF |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 170W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 100A
Power dissipation: 170W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 9mΩ
Mounting: THT
Gate charge: 62nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 170W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 100A
Power dissipation: 170W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 9mΩ
Mounting: THT
Gate charge: 62nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 78 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 56+ | 1.29 EUR |
| 250+ | 1.17 EUR |
| 500+ | 1.16 EUR |
| IRF1310NPBF |
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Hersteller: INFINEON TECHNOLOGIES
IRF1310NPBF THT N channel transistors
IRF1310NPBF THT N channel transistors
auf Bestellung 305 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 32+ | 2.25 EUR |
| 82+ | 0.87 EUR |
| 88+ | 0.82 EUR |
| IRF1324PBF |
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Hersteller: INFINEON TECHNOLOGIES
IRF1324PBF THT N channel transistors
IRF1324PBF THT N channel transistors
auf Bestellung 90 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 25+ | 2.92 EUR |
| 38+ | 1.92 EUR |
| 40+ | 1.82 EUR |
| 200+ | 1.8 EUR |
| IRF135B203 |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 135V; 91A; Idm: 512A; 441W; TO220AB
Case: TO220AB
Kind of channel: enhancement
Mounting: THT
Technology: HEXFET®
Kind of package: tube
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 0.27µC
On-state resistance: 8.4mΩ
Gate-source voltage: ±20V
Drain current: 91A
Drain-source voltage: 135V
Power dissipation: 441W
Pulsed drain current: 512A
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 135V; 91A; Idm: 512A; 441W; TO220AB
Case: TO220AB
Kind of channel: enhancement
Mounting: THT
Technology: HEXFET®
Kind of package: tube
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 0.27µC
On-state resistance: 8.4mΩ
Gate-source voltage: ±20V
Drain current: 91A
Drain-source voltage: 135V
Power dissipation: 441W
Pulsed drain current: 512A
Anzahl je Verpackung: 1 Stücke
auf Bestellung 50 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 23+ | 3.23 EUR |
| 27+ | 2.72 EUR |
| 50+ | 2.36 EUR |
| 100+ | 2.23 EUR |
| 250+ | 2.03 EUR |
| 500+ | 1.87 EUR |
| 1000+ | 1.8 EUR |
| IRF1404LPBF |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 162A; 200W; TO262
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 162A
Power dissipation: 200W
Case: TO262
Mounting: THT
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 162A; 200W; TO262
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 162A
Power dissipation: 200W
Case: TO262
Mounting: THT
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
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