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IPP60R180C7XKSA1 IPP60R180C7XKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED5B594A594EE1111BF&compId=IPP60R180C7-DTE.pdf?ci_sign=44faf0fccfdedd2c114610049948296d029df2e1 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 13A; 68W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ C7
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 13A
Power dissipation: 68W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.18Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 443 Stücke:
Lieferzeit 7-14 Tag (e)
24+3.09 EUR
Mindestbestellmenge: 24
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IPP60R190C6XKSA1 IPP60R190C6XKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED5B5944516ACCA91BF&compId=IPP60R190C6-DTE.pdf?ci_sign=656d49e416ee0ee069a2849faaa19764993ed0e3 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 20.2A; 151W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ C6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 20.2A
Power dissipation: 151W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.19Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 52 Stücke:
Lieferzeit 7-14 Tag (e)
19+3.93 EUR
Mindestbestellmenge: 19
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IPP60R190P6XKSA1 IPP60R190P6XKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED5B59496F43BA9B1BF&compId=IPP60R190P6-DTE.pdf?ci_sign=6ca2ab1861703fa95cc299fbb9cf787049410a12 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 20.2A; 151W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ P6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 20.2A
Power dissipation: 151W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.19Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 32 Stücke:
Lieferzeit 7-14 Tag (e)
32+2.23 EUR
50+2 EUR
Mindestbestellmenge: 32
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IPP60R199CPXKSA1 IPP60R199CPXKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED5B59453B6F1F651BF&compId=IPP60R199CP-DTE.pdf?ci_sign=92d70687cb740539bf38418ae0fd651c7a6f0e05 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 16A; 139W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ CP
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 16A
Power dissipation: 139W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.199Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 20 Stücke:
Lieferzeit 7-14 Tag (e)
18+4.08 EUR
20+3.58 EUR
Mindestbestellmenge: 18
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IPP60R299CPXKSA1 IPP60R299CPXKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED5B594497E2285B1BF&compId=IPP60R299CP-DTE.pdf?ci_sign=0aa6e8461138adc0224ff0880d043028a0164f7f Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 11A; 96W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ CP
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 11A
Power dissipation: 96W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.299Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 98 Stücke:
Lieferzeit 7-14 Tag (e)
32+2.27 EUR
34+2.12 EUR
36+2.02 EUR
50+1.82 EUR
100+1.72 EUR
Mindestbestellmenge: 32
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IPP80R1K2P7XKSA1 IPP80R1K2P7XKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB0ED61ED89EBAEBA74EE80143&compId=IPP80R1K2P7.pdf?ci_sign=1b0708e76114029cb0c9c403ab9149266548bc6e Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 3.1A; 37W; PG-TO220-3; ESD
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 3.1A
Power dissipation: 37W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 1.2Ω
Mounting: THT
Gate charge: 11nC
Kind of package: tube
Kind of channel: enhancement
Version: ESD
Anzahl je Verpackung: 1 Stücke
auf Bestellung 327 Stücke:
Lieferzeit 7-14 Tag (e)
40+1.8 EUR
48+1.5 EUR
50+1.44 EUR
54+1.33 EUR
150+1.29 EUR
Mindestbestellmenge: 40
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IPP80R360P7XKSA1 INFINEON TECHNOLOGIES infineon-ipp80r360p7-ds-en.pdf IPP80R360P7 THT N channel transistors
auf Bestellung 6 Stücke:
Lieferzeit 7-14 Tag (e)
6+11.91 EUR
16+4.46 EUR
50+2.67 EUR
Mindestbestellmenge: 6
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IPP80R450P7XKSA1 INFINEON TECHNOLOGIES Infineon-IPP80R450P7-DS-v02_00-EN.pdf?fileId=5546d46255dd933d0155e459bf0619fd IPP80R450P7XKSA1 THT N channel transistors
auf Bestellung 30 Stücke:
Lieferzeit 7-14 Tag (e)
25+2.92 EUR
30+2.39 EUR
250+1.94 EUR
Mindestbestellmenge: 25
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IPS65R1K5CEAKMA1 IPS65R1K5CEAKMA1 INFINEON TECHNOLOGIES IPS65R1K5CE-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 3.1A; 28W; IPAK SL
Technology: CoolMOS™
Kind of channel: enhancement
Mounting: THT
Case: IPAK SL
Type of transistor: N-MOSFET
Polarisation: unipolar
On-state resistance: 1.5Ω
Drain current: 3.1A
Gate-source voltage: ±20V
Power dissipation: 28W
Drain-source voltage: 650V
Anzahl je Verpackung: 1 Stücke
auf Bestellung 616 Stücke:
Lieferzeit 7-14 Tag (e)
191+0.38 EUR
211+0.34 EUR
237+0.3 EUR
Mindestbestellmenge: 191
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IPS80R900P7AKMA1 IPS80R900P7AKMA1 INFINEON TECHNOLOGIES Infineon-IPS80R900P7-DS-v02_00-EN.pdf?fileId=5546d4625b3ca4ec015b4764f6817039 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 3.9A; 45W; IPAK SL; ESD
Mounting: THT
Polarisation: unipolar
Gate charge: 15nC
On-state resistance: 0.9Ω
Drain current: 3.9A
Power dissipation: 45W
Gate-source voltage: ±20V
Drain-source voltage: 800V
Technology: CoolMOS™ P7
Kind of channel: enhancement
Version: ESD
Case: IPAK SL
Type of transistor: N-MOSFET
Anzahl je Verpackung: 1 Stücke
auf Bestellung 3 Stücke:
Lieferzeit 7-14 Tag (e)
3+23.84 EUR
5+14.3 EUR
25+2.86 EUR
75+0.96 EUR
Mindestbestellmenge: 3
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IPU80R1K0CEBKMA1 INFINEON TECHNOLOGIES Infineon-IPX80R1K0CE-DS-v02_01-en.pdf?fileId=db3a304340155f3d01402ebac5992590 IPU80R1K0CEBKMA1 THT N channel transistors
auf Bestellung 879 Stücke:
Lieferzeit 7-14 Tag (e)
121+0.59 EUR
123+0.58 EUR
128+0.56 EUR
133+0.54 EUR
Mindestbestellmenge: 121
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IPU80R1K2P7AKMA1 IPU80R1K2P7AKMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB0ED61ED89EBB8B84A4D56143&compId=IPU80R1K2P7.pdf?ci_sign=d3eea91f58a62d4babd0dbac4aad2c4ad81ff66c Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 3.1A; 37W; IPAK; ESD
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 3.1A
Power dissipation: 37W
Case: IPAK
Gate-source voltage: ±20V
On-state resistance: 1.2Ω
Mounting: THT
Gate charge: 11nC
Kind of package: tube
Kind of channel: enhancement
Version: ESD
Anzahl je Verpackung: 1 Stücke
auf Bestellung 430 Stücke:
Lieferzeit 7-14 Tag (e)
91+0.79 EUR
101+0.71 EUR
114+0.63 EUR
125+0.57 EUR
Mindestbestellmenge: 91
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IPU80R1K4P7AKMA1 INFINEON TECHNOLOGIES INFN-S-A0002786355-1.pdf?t.download=true&u=5oefqw IPU80R1K4P7 THT N channel transistors
auf Bestellung 1173 Stücke:
Lieferzeit 7-14 Tag (e)
52+1.4 EUR
131+0.55 EUR
139+0.52 EUR
1500+0.5 EUR
Mindestbestellmenge: 52
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IPU80R600P7AKMA1 IPU80R600P7AKMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB0ED61ED89EBBB67430780143&compId=IPU80R600P7.pdf?ci_sign=19e7459be59c0ddcb6e46cc60462c940e1a39fcf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 5.5A; 60W; IPAK; ESD
Mounting: THT
Polarisation: unipolar
Gate charge: 20nC
On-state resistance: 0.6Ω
Drain current: 5.5A
Power dissipation: 60W
Gate-source voltage: ±20V
Drain-source voltage: 800V
Technology: CoolMOS™ P7
Kind of channel: enhancement
Version: ESD
Case: IPAK
Type of transistor: N-MOSFET
Kind of package: tube
Anzahl je Verpackung: 1 Stücke
auf Bestellung 6 Stücke:
Lieferzeit 7-14 Tag (e)
6+11.91 EUR
25+2.86 EUR
Mindestbestellmenge: 6
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IPU80R900P7AKMA1 IPU80R900P7AKMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB0ED61ED89EBBBDDABCB60143&compId=IPU80R900P7.pdf?ci_sign=3a807cce8c544f1ff3fcc5744c8985b6833e01c9 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 3.9A; 45W; IPAK; ESD
Mounting: THT
Polarisation: unipolar
Gate charge: 15nC
On-state resistance: 0.9Ω
Drain current: 3.9A
Power dissipation: 45W
Gate-source voltage: ±20V
Drain-source voltage: 800V
Technology: CoolMOS™ P7
Kind of channel: enhancement
Version: ESD
Case: IPAK
Type of transistor: N-MOSFET
Kind of package: tube
Anzahl je Verpackung: 1 Stücke
auf Bestellung 203 Stücke:
Lieferzeit 7-14 Tag (e)
54+1.34 EUR
65+1.11 EUR
79+0.92 EUR
150+0.85 EUR
375+0.77 EUR
750+0.7 EUR
1500+0.67 EUR
Mindestbestellmenge: 54
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IPU95R2K0P7AKMA1 INFINEON TECHNOLOGIES infineon-ipu95r2k0p7-datasheet-en.pdf IPU95R2K0P7 THT N channel transistors
auf Bestellung 1221 Stücke:
Lieferzeit 7-14 Tag (e)
91+0.79 EUR
156+0.46 EUR
164+0.44 EUR
Mindestbestellmenge: 91
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IPU95R750P7AKMA1 IPU95R750P7AKMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB0ED61ED8AF9BA7A7AA8BC143&compId=IPU95R750P7.pdf?ci_sign=472403093c92524bad78203a01b30d3031a576e3 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 950V; 5.5A; 73W; IPAK; ESD
Mounting: THT
Case: IPAK
Technology: CoolMOS™ P7
Kind of channel: enhancement
Version: ESD
Type of transistor: N-MOSFET
Kind of package: tube
Polarisation: unipolar
Gate charge: 23nC
On-state resistance: 0.75Ω
Drain current: 5.5A
Gate-source voltage: ±20V
Power dissipation: 73W
Drain-source voltage: 950V
Anzahl je Verpackung: 1 Stücke
auf Bestellung 147 Stücke:
Lieferzeit 7-14 Tag (e)
44+1.63 EUR
48+1.52 EUR
52+1.4 EUR
57+1.26 EUR
62+1.16 EUR
Mindestbestellmenge: 44
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IPW60R031CFD7 IPW60R031CFD7 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE7AABA7D78568F074A&compId=IPW60R031CFD7.pdf?ci_sign=c11ed890a1b18706da62222855c2df1e6b231937 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 40A; 278W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 40A
Power dissipation: 278W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 60mΩ
Mounting: THT
Gate charge: 141nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 16 Stücke:
Lieferzeit 7-14 Tag (e)
6+12.2 EUR
10+11.38 EUR
Mindestbestellmenge: 6
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IPW60R037P7XKSA1 IPW60R037P7XKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB0ED61ED89EBBD7BE2A1DA143&compId=IPW60R037P7.pdf?ci_sign=a0965196f457b612a877e2bb887906e08fdd6397 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 48A; 255W; PG-TO247-3; ESD
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 48A
Power dissipation: 255W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 37mΩ
Mounting: THT
Gate charge: 121nC
Kind of package: tube
Kind of channel: enhancement
Version: ESD
Anzahl je Verpackung: 1 Stücke
auf Bestellung 138 Stücke:
Lieferzeit 7-14 Tag (e)
9+8.28 EUR
11+6.98 EUR
Mindestbestellmenge: 9
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IPW60R041C6FKSA1 IPW60R041C6FKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED5B59527FBD16DF1BF&compId=IPW60R041C6-DTE.pdf?ci_sign=6837f4b5c1cab04482cc6edd814da7b3dad60443 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 77.5A; 481W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ C6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 77.5A
Power dissipation: 481W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 41mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 41 Stücke:
Lieferzeit 7-14 Tag (e)
7+11.6 EUR
Mindestbestellmenge: 7
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IPW60R045CPFKSA1 IPW60R045CPFKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED5B594E4C7AF9B31BF&compId=IPW60R045CP-DTE.pdf?ci_sign=5e3f47fef8e1cb1491e58f40da372d83d84901cd Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 60A; 431W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ CP
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 60A
Power dissipation: 431W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 45mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 23 Stücke:
Lieferzeit 7-14 Tag (e)
4+23.38 EUR
Mindestbestellmenge: 4
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IPW60R099CPFKSA1 IPW60R099CPFKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB281E1EDF89F811F98A4020D6&compId=IPW60R099CP.pdf?ci_sign=fa5ac79b9c1d4d8e8023ad58506c7e9aba5240a7 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 31A; 255W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ CP
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 31A
Power dissipation: 255W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 99mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 37 Stücke:
Lieferzeit 7-14 Tag (e)
11+7.14 EUR
Mindestbestellmenge: 11
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IPW60R099P6XKSA1 IPW60R099P6XKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED5B595451D559B31BF&compId=IPW60R099P6-DTE.pdf?ci_sign=64f61ef499400e8d208bb826aca30234098f363e Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 37.9A; 278W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ P6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 37.9A
Power dissipation: 278W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 99mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 18 Stücke:
Lieferzeit 7-14 Tag (e)
13+5.52 EUR
30+4.02 EUR
Mindestbestellmenge: 13
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IPW60R125CPFKSA1 IPW60R125CPFKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED5B594E1B2AF78D1BF&compId=IPW60R125CP-DTE.pdf?ci_sign=538fed47957f97bf4916397747f0a9fe7c4f3e94 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 25A; 208W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ CP
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 25A
Power dissipation: 208W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 0.125Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 37 Stücke:
Lieferzeit 7-14 Tag (e)
10+7.81 EUR
13+5.52 EUR
30+5.41 EUR
60+5.03 EUR
150+4.52 EUR
240+4.36 EUR
Mindestbestellmenge: 10
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IPW60R125P6XKSA1 IPW60R125P6XKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED5B59543CDD019D1BF&compId=IPW60R125P6-DTE.pdf?ci_sign=088cedc48e6352559a5ff6e64b1bf0a9857977f4 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30A; 219W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ P6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 30A
Power dissipation: 219W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 0.125Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 12 Stücke:
Lieferzeit 7-14 Tag (e)
12+5.96 EUR
Mindestbestellmenge: 12
Im Einkaufswagen  Stück im Wert von  UAH
IPW60R190C6FKSA1 IPW60R190C6FKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED5B594DAE69A9FB1BF&compId=IPW60R190C6-DTE.pdf?ci_sign=aa3804d3e7bddb28ab47507aa621ef2f4dd6706c Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 20.2A; 151W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ C6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 20.2A
Power dissipation: 151W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 0.19Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 168 Stücke:
Lieferzeit 7-14 Tag (e)
20+3.76 EUR
22+3.32 EUR
24+2.99 EUR
30+2.83 EUR
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IPW60R190P6FKSA1 IPW60R190P6FKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED5B595309EB6B3D1BF&compId=IPW60R190P6-DTE.pdf?ci_sign=e714726303f0dd874f335ad607e36d2dccd82619 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 20.2A; 151W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ P6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 20.2A
Power dissipation: 151W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 0.19Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 58 Stücke:
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13+5.83 EUR
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IPW65R420CFDFKSA1 IPW65R420CFDFKSA1 INFINEON TECHNOLOGIES IPW65R420CFD-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 8.7A; 83.3W; PG-TO247-3
Technology: CoolMOS™
Kind of channel: enhancement
Mounting: THT
Case: PG-TO247-3
Type of transistor: N-MOSFET
Kind of package: tube
Polarisation: unipolar
On-state resistance: 0.42Ω
Drain current: 8.7A
Gate-source voltage: ±20V
Power dissipation: 83.3W
Drain-source voltage: 650V
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2 Stücke:
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2+35.75 EUR
3+23.84 EUR
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IPW80R280P7XKSA1 INFINEON TECHNOLOGIES Infineon-IPW80R280P7-DS-v02_00-EN.pdf?fileId=5546d46255dd933d0155e96482cb07dc IPW80R280P7 THT N channel transistors
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19+3.95 EUR
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IPZ60R040C7XKSA1 INFINEON TECHNOLOGIES Infineon-IPZ60R040C7-DS-v02_00-EN.pdf?fileId=5546d4624cb7f111014d4c9376864008 IPZ60R040C7XKSA1 THT N channel transistors
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4+18.26 EUR
5+17.26 EUR
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IR11672ASTRPBF INFINEON TECHNOLOGIES ir11672aspbf.pdf?fileId=5546d462533600a4015355c455561653 Category: MOSFET/IGBT drivers
Description: IC: driver; flyback,push-pull,resonant LLC; gate driver; SO8
Type of integrated circuit: driver
Topology: flyback; push-pull; resonant LLC
Kind of integrated circuit: gate driver
Case: SO8
Output current: -7...2A
Mounting: SMD
Operating temperature: -40...125°C
Application: SMPS
Kind of package: reel; tape
Supply voltage: 11.4...18V DC
Power: 625mW
Voltage class: 200V
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2489 Stücke:
Lieferzeit 7-14 Tag (e)
29+2.52 EUR
34+2.13 EUR
38+1.93 EUR
42+1.72 EUR
Mindestbestellmenge: 29
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IR2010PBF IR2010PBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB90B41EDA93E4F97CE2DB20C4&compId=IR2010SPBF.pdf?ci_sign=7f2358c95a7abe46aba0e75f703e0870e922928f Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; 1.6W
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-/low-side
Output current: -3...3A
Number of channels: 2
Mounting: THT
Case: DIP14
Kind of package: tube
Supply voltage: 10...20V DC
Voltage class: 200V
Topology: MOSFET half-bridge
Operating temperature: -40...125°C
Turn-off time: 65ns
Turn-on time: 95ns
Power: 1.6W
Integrated circuit features: charge pump; dead time; integrated bootstrap functionality
Anzahl je Verpackung: 1 Stücke
auf Bestellung 22 Stücke:
Lieferzeit 7-14 Tag (e)
11+7.11 EUR
12+6.39 EUR
13+5.65 EUR
25+5.08 EUR
100+4.73 EUR
Mindestbestellmenge: 11
Im Einkaufswagen  Stück im Wert von  UAH
IR2010STRPBF IR2010STRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB90B41EDA93E4F97CE2DB20C4&compId=IR2010SPBF.pdf?ci_sign=7f2358c95a7abe46aba0e75f703e0870e922928f Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO16
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-/low-side
Output current: -3...3A
Number of channels: 2
Mounting: SMD
Case: SO16
Kind of package: reel; tape
Supply voltage: 10...20V DC
Voltage class: 200V
Topology: MOSFET half-bridge
Operating temperature: -40...125°C
Turn-off time: 65ns
Turn-on time: 95ns
Power: 1.25W
Anzahl je Verpackung: 1 Stücke
auf Bestellung 975 Stücke:
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21+3.46 EUR
27+2.69 EUR
Mindestbestellmenge: 21
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IR2011SPBF INFINEON TECHNOLOGIES ir2011.pdf?fileId=5546d462533600a4015355c49b831663 description IR2011SPBF MOSFET/IGBT drivers
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13+5.51 EUR
20+3.58 EUR
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IR2101PBF IR2101PBF INFINEON TECHNOLOGIES ir2101.pdf description Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; DIP8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: DIP8
Output current: -270...130mA
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-off time: 150ns
Turn-on time: 160ns
Power: 1W
Anzahl je Verpackung: 1 Stücke
auf Bestellung 70 Stücke:
Lieferzeit 7-14 Tag (e)
21+3.47 EUR
25+2.97 EUR
27+2.73 EUR
30+2.43 EUR
50+2.26 EUR
100+2.13 EUR
250+2.07 EUR
Mindestbestellmenge: 21
Im Einkaufswagen  Stück im Wert von  UAH
IR2101STRPBF IR2101STRPBF INFINEON TECHNOLOGIES IR2101SPBF.pdf description Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Output current: -270...130mA
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Voltage class: 600V
Turn-off time: 150ns
Turn-on time: 160ns
Power: 625mW
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2162 Stücke:
Lieferzeit 7-14 Tag (e)
50+1.44 EUR
68+1.06 EUR
75+0.96 EUR
80+0.9 EUR
100+0.87 EUR
Mindestbestellmenge: 50
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IR2102STRPBF IR2102STRPBF INFINEON TECHNOLOGIES IRSDS17613-1.pdf?t.download=true&u=5oefqw Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Output current: -270...130mA
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Voltage class: 600V
Turn-off time: 150ns
Turn-on time: 160ns
Power: 625mW
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1446 Stücke:
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44+1.63 EUR
50+1.43 EUR
59+1.22 EUR
Mindestbestellmenge: 44
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IR2103STRPBF IR2103STRPBF INFINEON TECHNOLOGIES ir2103.pdf?fileId=5546d462533600a4015355c7b54b166f description Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Output current: -270...130mA
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Voltage class: 600V
Turn-off time: 150ns
Turn-on time: 680ns
Power: 625mW
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2462 Stücke:
Lieferzeit 7-14 Tag (e)
66+1.09 EUR
68+1.06 EUR
77+0.93 EUR
80+0.9 EUR
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IR2104PBF IR2104PBF INFINEON TECHNOLOGIES IR2104PBF.pdf description Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; DIP8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: DIP8
Output current: -270...130mA
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-off time: 150ns
Turn-on time: 680ns
Power: 1W
Anzahl je Verpackung: 1 Stücke
auf Bestellung 202 Stücke:
Lieferzeit 7-14 Tag (e)
21+3.55 EUR
27+2.69 EUR
29+2.5 EUR
50+2.37 EUR
100+2.26 EUR
250+2.14 EUR
Mindestbestellmenge: 21
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IR2104SPBF IR2104SPBF INFINEON TECHNOLOGIES ir2104.pdf description Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Output current: -270...130mA
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-off time: 150ns
Turn-on time: 680ns
Power: 625mW
Anzahl je Verpackung: 1 Stücke
auf Bestellung 122 Stücke:
Lieferzeit 7-14 Tag (e)
33+2.23 EUR
38+1.89 EUR
43+1.7 EUR
49+1.49 EUR
50+1.44 EUR
Mindestbestellmenge: 33
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IR2104STRPBF IR2104STRPBF INFINEON TECHNOLOGIES IR2104PBF.pdf description Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Output current: -270...130mA
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Voltage class: 600V
Turn-off time: 150ns
Turn-on time: 680ns
Power: 625mW
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2297 Stücke:
Lieferzeit 7-14 Tag (e)
50+1.44 EUR
69+1.05 EUR
75+0.96 EUR
80+0.9 EUR
100+0.85 EUR
250+0.8 EUR
500+0.79 EUR
Mindestbestellmenge: 50
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IR2106SPBF IR2106SPBF INFINEON TECHNOLOGIES ir2106.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Output current: -0.35...0.2A
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-off time: 200ns
Turn-on time: 220ns
Power: 625mW
Anzahl je Verpackung: 1 Stücke
auf Bestellung 77 Stücke:
Lieferzeit 7-14 Tag (e)
23+3.25 EUR
25+2.92 EUR
29+2.55 EUR
95+2.16 EUR
190+2.14 EUR
Mindestbestellmenge: 23
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IR2106STRPBF IR2106STRPBF INFINEON TECHNOLOGIES ir2106.pdf?fileId=5546d462533600a4015355c7cfc51673 description Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Output current: -0.35...0.2A
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Voltage class: 600V
Turn-off time: 200ns
Turn-on time: 220ns
Power: 625mW
Anzahl je Verpackung: 1 Stücke
auf Bestellung 666 Stücke:
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55+1.3 EUR
57+1.27 EUR
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IR21094SPBF IR21094SPBF INFINEON TECHNOLOGIES IR21094SPBF.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO14
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO14
Output current: -250...120mA
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-off time: 200ns
Turn-on time: 750ns
Power: 1W
Anzahl je Verpackung: 1 Stücke
auf Bestellung 16 Stücke:
Lieferzeit 7-14 Tag (e)
16+4.46 EUR
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IR21094STRPBF IR21094STRPBF INFINEON TECHNOLOGIES IR21094SPBF.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO14
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO14
Output current: -250...120mA
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Voltage class: 600V
Turn-off time: 200ns
Turn-on time: 750ns
Power: 1W
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1579 Stücke:
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38+1.92 EUR
50+1.44 EUR
54+1.34 EUR
57+1.26 EUR
100+1.2 EUR
250+1.19 EUR
Mindestbestellmenge: 38
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IR2109PBF IR2109PBF INFINEON TECHNOLOGIES IR21094SPBF.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; DIP8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: DIP8
Output current: -250...120mA
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-off time: 200ns
Turn-on time: 750ns
Power: 1W
Anzahl je Verpackung: 1 Stücke
auf Bestellung 51 Stücke:
Lieferzeit 7-14 Tag (e)
21+3.46 EUR
28+2.6 EUR
30+2.43 EUR
50+2.3 EUR
100+2.19 EUR
Mindestbestellmenge: 21
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IR2109STRPBF IR2109STRPBF INFINEON TECHNOLOGIES IR21094SPBF.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Output current: -250...120mA
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Voltage class: 600V
Turn-off time: 200ns
Turn-on time: 750ns
Power: 625mW
Anzahl je Verpackung: 1 Stücke
auf Bestellung 3718 Stücke:
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55+1.3 EUR
65+1.12 EUR
69+1.04 EUR
Mindestbestellmenge: 55
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IR2110PBF IR2110PBF INFINEON TECHNOLOGIES ir2110_2113.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; 1.6W
Mounting: THT
Operating temperature: -40...125°C
Output current: -2...2A
Power: 1.6W
Number of channels: 2
Supply voltage: 10...20V DC
Turn-off time: 111ns
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Type of integrated circuit: driver
Case: DIP14
Voltage class: 500V
Kind of package: tube
Turn-on time: 145ns
Anzahl je Verpackung: 1 Stücke
auf Bestellung 87 Stücke:
Lieferzeit 7-14 Tag (e)
22+3.4 EUR
24+3 EUR
28+2.63 EUR
29+2.47 EUR
50+2.37 EUR
100+2.26 EUR
250+2.2 EUR
Mindestbestellmenge: 22
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IR2110SPBF IR2110SPBF INFINEON TECHNOLOGIES ir2110_2113.pdf description Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; Ch: 2
Mounting: SMD
Operating temperature: -40...125°C
Output current: -2...2A
Power: 1.25W
Number of channels: 2
Supply voltage: 10...20V DC
Turn-off time: 111ns
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Type of integrated circuit: driver
Case: SO16-W
Voltage class: 500V
Kind of package: tube
Turn-on time: 145ns
Anzahl je Verpackung: 1 Stücke
auf Bestellung 5 Stücke:
Lieferzeit 7-14 Tag (e)
5+14.3 EUR
10+7.15 EUR
25+2.86 EUR
45+2.69 EUR
135+2.37 EUR
270+2.19 EUR
540+2 EUR
Mindestbestellmenge: 5
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IR2110STRPBF IR2110STRPBF INFINEON TECHNOLOGIES IR2110STRPBF.pdf description Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; Ch: 2
Mounting: SMD
Operating temperature: -40...125°C
Output current: -2...2A
Power: 1.25W
Number of channels: 2
Supply voltage: 10...20V DC
Turn-off time: 111ns
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Type of integrated circuit: driver
Case: SO16-W
Voltage class: 500V
Kind of package: reel; tape
Turn-on time: 145ns
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1231 Stücke:
Lieferzeit 7-14 Tag (e)
23+3.2 EUR
25+2.9 EUR
30+2.39 EUR
33+2.2 EUR
50+2.09 EUR
100+1.99 EUR
250+1.87 EUR
Mindestbestellmenge: 23
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IR2111PBF IR2111PBF INFINEON TECHNOLOGIES ir2111.pdf description Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; DIP8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: DIP8
Output current: -420...200mA
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-off time: 190ns
Turn-on time: 830ns
Power: 1W
Anzahl je Verpackung: 1 Stücke
auf Bestellung 83 Stücke:
Lieferzeit 7-14 Tag (e)
24+3.09 EUR
31+2.36 EUR
34+2.16 EUR
Mindestbestellmenge: 24
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IR2111SPBF IR2111SPBF INFINEON TECHNOLOGIES IR2111SPBF.pdf description Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Output current: -420...200mA
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-off time: 190ns
Turn-on time: 830ns
Power: 625mW
Anzahl je Verpackung: 1 Stücke
auf Bestellung 112 Stücke:
Lieferzeit 7-14 Tag (e)
50+1.44 EUR
Mindestbestellmenge: 50
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IR2112PBF IR2112PBF INFINEON TECHNOLOGIES ir2112.pdf description Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; 1.6W
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: DIP14
Output current: -420...200mA
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-off time: 145ns
Turn-on time: 205ns
Power: 1.6W
Anzahl je Verpackung: 1 Stücke
auf Bestellung 52 Stücke:
Lieferzeit 7-14 Tag (e)
16+4.5 EUR
21+3.42 EUR
25+3.17 EUR
50+3.03 EUR
100+2.9 EUR
500+2.86 EUR
Mindestbestellmenge: 16
Im Einkaufswagen  Stück im Wert von  UAH
IR2112SPBF IR2112SPBF INFINEON TECHNOLOGIES ir2112.pdf description Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; Ch: 2
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO16-W
Output current: -420...200mA
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-off time: 145ns
Turn-on time: 205ns
Power: 1.25W
Anzahl je Verpackung: 1 Stücke
auf Bestellung 44 Stücke:
Lieferzeit 7-14 Tag (e)
26+2.76 EUR
45+2.69 EUR
Mindestbestellmenge: 26
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IR2112STRPBF IR2112STRPBF INFINEON TECHNOLOGIES IR2112STRPBF.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; Ch: 2
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO16-W
Output current: -420...200mA
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Voltage class: 600V
Turn-off time: 145ns
Turn-on time: 205ns
Power: 1.25W
Anzahl je Verpackung: 1 Stücke
auf Bestellung 747 Stücke:
Lieferzeit 7-14 Tag (e)
25+2.89 EUR
34+2.14 EUR
35+2.06 EUR
Mindestbestellmenge: 25
Im Einkaufswagen  Stück im Wert von  UAH
IR2113PBF IR2113PBF INFINEON TECHNOLOGIES ir2110_2113.pdf description Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; 1.6W
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: DIP14
Output current: -2...2A
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-off time: 111ns
Turn-on time: 145ns
Power: 1.6W
Anzahl je Verpackung: 1 Stücke
auf Bestellung 58 Stücke:
Lieferzeit 7-14 Tag (e)
24+3.06 EUR
25+2.89 EUR
29+2.52 EUR
31+2.37 EUR
100+2.29 EUR
Mindestbestellmenge: 24
Im Einkaufswagen  Stück im Wert von  UAH
IR2113SPBF IR2113SPBF INFINEON TECHNOLOGIES IR2113SPBF.pdf description Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; Ch: 2
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO16-W
Output current: -2...2A
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-off time: 111ns
Turn-on time: 145ns
Power: 1.25W
Anzahl je Verpackung: 1 Stücke
auf Bestellung 69 Stücke:
Lieferzeit 7-14 Tag (e)
16+4.7 EUR
17+4.28 EUR
20+3.65 EUR
25+3.25 EUR
35+3.15 EUR
45+3.06 EUR
225+2.99 EUR
Mindestbestellmenge: 16
Im Einkaufswagen  Stück im Wert von  UAH
IR2113STRPBF IR2113STRPBF INFINEON TECHNOLOGIES IR2113STRPBF.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; Ch: 2
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO16-W
Output current: -2...2A
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Voltage class: 600V
Turn-off time: 111ns
Turn-on time: 145ns
Power: 1.25W
Anzahl je Verpackung: 1 Stücke
auf Bestellung 864 Stücke:
Lieferzeit 7-14 Tag (e)
26+2.82 EUR
28+2.59 EUR
30+2.45 EUR
32+2.25 EUR
50+2.1 EUR
100+1.99 EUR
125+1.96 EUR
Mindestbestellmenge: 26
Im Einkaufswagen  Stück im Wert von  UAH
IR2114SSPBF IR2114SSPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE89DA33D55348713D7&compId=IR2114SSPBF.pdf?ci_sign=76268fd6f1521786ea6d8559b91e974700f61597 Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT half-bridge; high-/low-side,gate driver; SSOP24
Mounting: SMD
Operating temperature: -40...125°C
Output current: -1.5...1A
Power: 1.5W
Number of channels: 2
Supply voltage: 10.4...20V DC
Turn-off time: 440ns
Topology: IGBT half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Type of integrated circuit: driver
Case: SSOP24
Voltage class: 0.6/1.2kV
Turn-on time: 440ns
Anzahl je Verpackung: 1 Stücke
auf Bestellung 30 Stücke:
Lieferzeit 7-14 Tag (e)
9+8.59 EUR
Mindestbestellmenge: 9
Im Einkaufswagen  Stück im Wert von  UAH
IR2117PBF IR2117PBF INFINEON TECHNOLOGIES ir2117.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,gate driver; DIP8; 1W
Type of integrated circuit: driver
Topology: single transistor
Kind of integrated circuit: gate driver; high-side
Case: DIP8
Output current: -420...200mA
Power: 1W
Number of channels: 1
Supply voltage: 10...20V DC
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 125ns
Turn-off time: 105ns
Anzahl je Verpackung: 1 Stücke
auf Bestellung 233 Stücke:
Lieferzeit 7-14 Tag (e)
23+3.12 EUR
27+2.7 EUR
30+2.4 EUR
31+2.32 EUR
50+2.2 EUR
250+2.16 EUR
Mindestbestellmenge: 23
Im Einkaufswagen  Stück im Wert von  UAH
IPP60R180C7XKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED5B594A594EE1111BF&compId=IPP60R180C7-DTE.pdf?ci_sign=44faf0fccfdedd2c114610049948296d029df2e1
IPP60R180C7XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 13A; 68W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ C7
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 13A
Power dissipation: 68W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.18Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 443 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
24+3.09 EUR
Mindestbestellmenge: 24
Im Einkaufswagen  Stück im Wert von  UAH
IPP60R190C6XKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED5B5944516ACCA91BF&compId=IPP60R190C6-DTE.pdf?ci_sign=656d49e416ee0ee069a2849faaa19764993ed0e3
IPP60R190C6XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 20.2A; 151W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ C6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 20.2A
Power dissipation: 151W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.19Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 52 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
19+3.93 EUR
Mindestbestellmenge: 19
Im Einkaufswagen  Stück im Wert von  UAH
IPP60R190P6XKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED5B59496F43BA9B1BF&compId=IPP60R190P6-DTE.pdf?ci_sign=6ca2ab1861703fa95cc299fbb9cf787049410a12
IPP60R190P6XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 20.2A; 151W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ P6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 20.2A
Power dissipation: 151W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.19Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 32 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
32+2.23 EUR
50+2 EUR
Mindestbestellmenge: 32
Im Einkaufswagen  Stück im Wert von  UAH
IPP60R199CPXKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED5B59453B6F1F651BF&compId=IPP60R199CP-DTE.pdf?ci_sign=92d70687cb740539bf38418ae0fd651c7a6f0e05
IPP60R199CPXKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 16A; 139W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ CP
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 16A
Power dissipation: 139W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.199Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 20 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
18+4.08 EUR
20+3.58 EUR
Mindestbestellmenge: 18
Im Einkaufswagen  Stück im Wert von  UAH
IPP60R299CPXKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED5B594497E2285B1BF&compId=IPP60R299CP-DTE.pdf?ci_sign=0aa6e8461138adc0224ff0880d043028a0164f7f
IPP60R299CPXKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 11A; 96W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ CP
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 11A
Power dissipation: 96W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.299Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 98 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
32+2.27 EUR
34+2.12 EUR
36+2.02 EUR
50+1.82 EUR
100+1.72 EUR
Mindestbestellmenge: 32
Im Einkaufswagen  Stück im Wert von  UAH
IPP80R1K2P7XKSA1 pVersion=0046&contRep=ZT&docId=005056AB0ED61ED89EBAEBA74EE80143&compId=IPP80R1K2P7.pdf?ci_sign=1b0708e76114029cb0c9c403ab9149266548bc6e
IPP80R1K2P7XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 3.1A; 37W; PG-TO220-3; ESD
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 3.1A
Power dissipation: 37W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 1.2Ω
Mounting: THT
Gate charge: 11nC
Kind of package: tube
Kind of channel: enhancement
Version: ESD
Anzahl je Verpackung: 1 Stücke
auf Bestellung 327 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
40+1.8 EUR
48+1.5 EUR
50+1.44 EUR
54+1.33 EUR
150+1.29 EUR
Mindestbestellmenge: 40
Im Einkaufswagen  Stück im Wert von  UAH
IPP80R360P7XKSA1 infineon-ipp80r360p7-ds-en.pdf
Hersteller: INFINEON TECHNOLOGIES
IPP80R360P7 THT N channel transistors
auf Bestellung 6 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
6+11.91 EUR
16+4.46 EUR
50+2.67 EUR
Mindestbestellmenge: 6
Im Einkaufswagen  Stück im Wert von  UAH
IPP80R450P7XKSA1 Infineon-IPP80R450P7-DS-v02_00-EN.pdf?fileId=5546d46255dd933d0155e459bf0619fd
Hersteller: INFINEON TECHNOLOGIES
IPP80R450P7XKSA1 THT N channel transistors
auf Bestellung 30 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
25+2.92 EUR
30+2.39 EUR
250+1.94 EUR
Mindestbestellmenge: 25
Im Einkaufswagen  Stück im Wert von  UAH
IPS65R1K5CEAKMA1 IPS65R1K5CE-DTE.pdf
IPS65R1K5CEAKMA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 3.1A; 28W; IPAK SL
Technology: CoolMOS™
Kind of channel: enhancement
Mounting: THT
Case: IPAK SL
Type of transistor: N-MOSFET
Polarisation: unipolar
On-state resistance: 1.5Ω
Drain current: 3.1A
Gate-source voltage: ±20V
Power dissipation: 28W
Drain-source voltage: 650V
Anzahl je Verpackung: 1 Stücke
auf Bestellung 616 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
191+0.38 EUR
211+0.34 EUR
237+0.3 EUR
Mindestbestellmenge: 191
Im Einkaufswagen  Stück im Wert von  UAH
IPS80R900P7AKMA1 Infineon-IPS80R900P7-DS-v02_00-EN.pdf?fileId=5546d4625b3ca4ec015b4764f6817039
IPS80R900P7AKMA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 3.9A; 45W; IPAK SL; ESD
Mounting: THT
Polarisation: unipolar
Gate charge: 15nC
On-state resistance: 0.9Ω
Drain current: 3.9A
Power dissipation: 45W
Gate-source voltage: ±20V
Drain-source voltage: 800V
Technology: CoolMOS™ P7
Kind of channel: enhancement
Version: ESD
Case: IPAK SL
Type of transistor: N-MOSFET
Anzahl je Verpackung: 1 Stücke
auf Bestellung 3 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
3+23.84 EUR
5+14.3 EUR
25+2.86 EUR
75+0.96 EUR
Mindestbestellmenge: 3
Im Einkaufswagen  Stück im Wert von  UAH
IPU80R1K0CEBKMA1 Infineon-IPX80R1K0CE-DS-v02_01-en.pdf?fileId=db3a304340155f3d01402ebac5992590
Hersteller: INFINEON TECHNOLOGIES
IPU80R1K0CEBKMA1 THT N channel transistors
auf Bestellung 879 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
121+0.59 EUR
123+0.58 EUR
128+0.56 EUR
133+0.54 EUR
Mindestbestellmenge: 121
Im Einkaufswagen  Stück im Wert von  UAH
IPU80R1K2P7AKMA1 pVersion=0046&contRep=ZT&docId=005056AB0ED61ED89EBB8B84A4D56143&compId=IPU80R1K2P7.pdf?ci_sign=d3eea91f58a62d4babd0dbac4aad2c4ad81ff66c
IPU80R1K2P7AKMA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 3.1A; 37W; IPAK; ESD
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 3.1A
Power dissipation: 37W
Case: IPAK
Gate-source voltage: ±20V
On-state resistance: 1.2Ω
Mounting: THT
Gate charge: 11nC
Kind of package: tube
Kind of channel: enhancement
Version: ESD
Anzahl je Verpackung: 1 Stücke
auf Bestellung 430 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
91+0.79 EUR
101+0.71 EUR
114+0.63 EUR
125+0.57 EUR
Mindestbestellmenge: 91
Im Einkaufswagen  Stück im Wert von  UAH
IPU80R1K4P7AKMA1 INFN-S-A0002786355-1.pdf?t.download=true&u=5oefqw
Hersteller: INFINEON TECHNOLOGIES
IPU80R1K4P7 THT N channel transistors
auf Bestellung 1173 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
52+1.4 EUR
131+0.55 EUR
139+0.52 EUR
1500+0.5 EUR
Mindestbestellmenge: 52
Im Einkaufswagen  Stück im Wert von  UAH
IPU80R600P7AKMA1 pVersion=0046&contRep=ZT&docId=005056AB0ED61ED89EBBB67430780143&compId=IPU80R600P7.pdf?ci_sign=19e7459be59c0ddcb6e46cc60462c940e1a39fcf
IPU80R600P7AKMA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 5.5A; 60W; IPAK; ESD
Mounting: THT
Polarisation: unipolar
Gate charge: 20nC
On-state resistance: 0.6Ω
Drain current: 5.5A
Power dissipation: 60W
Gate-source voltage: ±20V
Drain-source voltage: 800V
Technology: CoolMOS™ P7
Kind of channel: enhancement
Version: ESD
Case: IPAK
Type of transistor: N-MOSFET
Kind of package: tube
Anzahl je Verpackung: 1 Stücke
auf Bestellung 6 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
6+11.91 EUR
25+2.86 EUR
Mindestbestellmenge: 6
Im Einkaufswagen  Stück im Wert von  UAH
IPU80R900P7AKMA1 pVersion=0046&contRep=ZT&docId=005056AB0ED61ED89EBBBDDABCB60143&compId=IPU80R900P7.pdf?ci_sign=3a807cce8c544f1ff3fcc5744c8985b6833e01c9
IPU80R900P7AKMA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 3.9A; 45W; IPAK; ESD
Mounting: THT
Polarisation: unipolar
Gate charge: 15nC
On-state resistance: 0.9Ω
Drain current: 3.9A
Power dissipation: 45W
Gate-source voltage: ±20V
Drain-source voltage: 800V
Technology: CoolMOS™ P7
Kind of channel: enhancement
Version: ESD
Case: IPAK
Type of transistor: N-MOSFET
Kind of package: tube
Anzahl je Verpackung: 1 Stücke
auf Bestellung 203 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
54+1.34 EUR
65+1.11 EUR
79+0.92 EUR
150+0.85 EUR
375+0.77 EUR
750+0.7 EUR
1500+0.67 EUR
Mindestbestellmenge: 54
Im Einkaufswagen  Stück im Wert von  UAH
IPU95R2K0P7AKMA1 infineon-ipu95r2k0p7-datasheet-en.pdf
Hersteller: INFINEON TECHNOLOGIES
IPU95R2K0P7 THT N channel transistors
auf Bestellung 1221 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
91+0.79 EUR
156+0.46 EUR
164+0.44 EUR
Mindestbestellmenge: 91
Im Einkaufswagen  Stück im Wert von  UAH
IPU95R750P7AKMA1 pVersion=0046&contRep=ZT&docId=005056AB0ED61ED8AF9BA7A7AA8BC143&compId=IPU95R750P7.pdf?ci_sign=472403093c92524bad78203a01b30d3031a576e3
IPU95R750P7AKMA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 950V; 5.5A; 73W; IPAK; ESD
Mounting: THT
Case: IPAK
Technology: CoolMOS™ P7
Kind of channel: enhancement
Version: ESD
Type of transistor: N-MOSFET
Kind of package: tube
Polarisation: unipolar
Gate charge: 23nC
On-state resistance: 0.75Ω
Drain current: 5.5A
Gate-source voltage: ±20V
Power dissipation: 73W
Drain-source voltage: 950V
Anzahl je Verpackung: 1 Stücke
auf Bestellung 147 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
44+1.63 EUR
48+1.52 EUR
52+1.4 EUR
57+1.26 EUR
62+1.16 EUR
Mindestbestellmenge: 44
Im Einkaufswagen  Stück im Wert von  UAH
IPW60R031CFD7 pVersion=0046&contRep=ZT&docId=005056AB752F1EE7AABA7D78568F074A&compId=IPW60R031CFD7.pdf?ci_sign=c11ed890a1b18706da62222855c2df1e6b231937
IPW60R031CFD7
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 40A; 278W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 40A
Power dissipation: 278W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 60mΩ
Mounting: THT
Gate charge: 141nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 16 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
6+12.2 EUR
10+11.38 EUR
Mindestbestellmenge: 6
Im Einkaufswagen  Stück im Wert von  UAH
IPW60R037P7XKSA1 pVersion=0046&contRep=ZT&docId=005056AB0ED61ED89EBBD7BE2A1DA143&compId=IPW60R037P7.pdf?ci_sign=a0965196f457b612a877e2bb887906e08fdd6397
IPW60R037P7XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 48A; 255W; PG-TO247-3; ESD
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 48A
Power dissipation: 255W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 37mΩ
Mounting: THT
Gate charge: 121nC
Kind of package: tube
Kind of channel: enhancement
Version: ESD
Anzahl je Verpackung: 1 Stücke
auf Bestellung 138 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
9+8.28 EUR
11+6.98 EUR
Mindestbestellmenge: 9
Im Einkaufswagen  Stück im Wert von  UAH
IPW60R041C6FKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED5B59527FBD16DF1BF&compId=IPW60R041C6-DTE.pdf?ci_sign=6837f4b5c1cab04482cc6edd814da7b3dad60443
IPW60R041C6FKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 77.5A; 481W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ C6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 77.5A
Power dissipation: 481W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 41mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 41 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
7+11.6 EUR
Mindestbestellmenge: 7
Im Einkaufswagen  Stück im Wert von  UAH
IPW60R045CPFKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED5B594E4C7AF9B31BF&compId=IPW60R045CP-DTE.pdf?ci_sign=5e3f47fef8e1cb1491e58f40da372d83d84901cd
IPW60R045CPFKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 60A; 431W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ CP
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 60A
Power dissipation: 431W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 45mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 23 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
4+23.38 EUR
Mindestbestellmenge: 4
Im Einkaufswagen  Stück im Wert von  UAH
IPW60R099CPFKSA1 pVersion=0046&contRep=ZT&docId=005056AB281E1EDF89F811F98A4020D6&compId=IPW60R099CP.pdf?ci_sign=fa5ac79b9c1d4d8e8023ad58506c7e9aba5240a7
IPW60R099CPFKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 31A; 255W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ CP
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 31A
Power dissipation: 255W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 99mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 37 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
11+7.14 EUR
Mindestbestellmenge: 11
Im Einkaufswagen  Stück im Wert von  UAH
IPW60R099P6XKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED5B595451D559B31BF&compId=IPW60R099P6-DTE.pdf?ci_sign=64f61ef499400e8d208bb826aca30234098f363e
IPW60R099P6XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 37.9A; 278W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ P6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 37.9A
Power dissipation: 278W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 99mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 18 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
13+5.52 EUR
30+4.02 EUR
Mindestbestellmenge: 13
Im Einkaufswagen  Stück im Wert von  UAH
IPW60R125CPFKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED5B594E1B2AF78D1BF&compId=IPW60R125CP-DTE.pdf?ci_sign=538fed47957f97bf4916397747f0a9fe7c4f3e94
IPW60R125CPFKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 25A; 208W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ CP
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 25A
Power dissipation: 208W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 0.125Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 37 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
10+7.81 EUR
13+5.52 EUR
30+5.41 EUR
60+5.03 EUR
150+4.52 EUR
240+4.36 EUR
Mindestbestellmenge: 10
Im Einkaufswagen  Stück im Wert von  UAH
IPW60R125P6XKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED5B59543CDD019D1BF&compId=IPW60R125P6-DTE.pdf?ci_sign=088cedc48e6352559a5ff6e64b1bf0a9857977f4
IPW60R125P6XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30A; 219W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ P6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 30A
Power dissipation: 219W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 0.125Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 12 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
12+5.96 EUR
Mindestbestellmenge: 12
Im Einkaufswagen  Stück im Wert von  UAH
IPW60R190C6FKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED5B594DAE69A9FB1BF&compId=IPW60R190C6-DTE.pdf?ci_sign=aa3804d3e7bddb28ab47507aa621ef2f4dd6706c
IPW60R190C6FKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 20.2A; 151W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ C6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 20.2A
Power dissipation: 151W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 0.19Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 168 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
20+3.76 EUR
22+3.32 EUR
24+2.99 EUR
30+2.83 EUR
Mindestbestellmenge: 20
Im Einkaufswagen  Stück im Wert von  UAH
IPW60R190P6FKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED5B595309EB6B3D1BF&compId=IPW60R190P6-DTE.pdf?ci_sign=e714726303f0dd874f335ad607e36d2dccd82619
IPW60R190P6FKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 20.2A; 151W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ P6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 20.2A
Power dissipation: 151W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 0.19Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 58 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
13+5.83 EUR
Mindestbestellmenge: 13
Im Einkaufswagen  Stück im Wert von  UAH
IPW65R420CFDFKSA1 IPW65R420CFD-DTE.pdf
IPW65R420CFDFKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 8.7A; 83.3W; PG-TO247-3
Technology: CoolMOS™
Kind of channel: enhancement
Mounting: THT
Case: PG-TO247-3
Type of transistor: N-MOSFET
Kind of package: tube
Polarisation: unipolar
On-state resistance: 0.42Ω
Drain current: 8.7A
Gate-source voltage: ±20V
Power dissipation: 83.3W
Drain-source voltage: 650V
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
2+35.75 EUR
3+23.84 EUR
10+7.15 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
IPW80R280P7XKSA1 Infineon-IPW80R280P7-DS-v02_00-EN.pdf?fileId=5546d46255dd933d0155e96482cb07dc
Hersteller: INFINEON TECHNOLOGIES
IPW80R280P7 THT N channel transistors
auf Bestellung 98 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
18+4.18 EUR
19+3.95 EUR
Mindestbestellmenge: 18
Im Einkaufswagen  Stück im Wert von  UAH
IPZ60R040C7XKSA1 Infineon-IPZ60R040C7-DS-v02_00-EN.pdf?fileId=5546d4624cb7f111014d4c9376864008
Hersteller: INFINEON TECHNOLOGIES
IPZ60R040C7XKSA1 THT N channel transistors
auf Bestellung 21 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
4+18.26 EUR
5+17.26 EUR
Mindestbestellmenge: 4
Im Einkaufswagen  Stück im Wert von  UAH
IR11672ASTRPBF ir11672aspbf.pdf?fileId=5546d462533600a4015355c455561653
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; flyback,push-pull,resonant LLC; gate driver; SO8
Type of integrated circuit: driver
Topology: flyback; push-pull; resonant LLC
Kind of integrated circuit: gate driver
Case: SO8
Output current: -7...2A
Mounting: SMD
Operating temperature: -40...125°C
Application: SMPS
Kind of package: reel; tape
Supply voltage: 11.4...18V DC
Power: 625mW
Voltage class: 200V
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2489 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
29+2.52 EUR
34+2.13 EUR
38+1.93 EUR
42+1.72 EUR
Mindestbestellmenge: 29
Im Einkaufswagen  Stück im Wert von  UAH
IR2010PBF pVersion=0046&contRep=ZT&docId=005056AB90B41EDA93E4F97CE2DB20C4&compId=IR2010SPBF.pdf?ci_sign=7f2358c95a7abe46aba0e75f703e0870e922928f
IR2010PBF
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; 1.6W
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-/low-side
Output current: -3...3A
Number of channels: 2
Mounting: THT
Case: DIP14
Kind of package: tube
Supply voltage: 10...20V DC
Voltage class: 200V
Topology: MOSFET half-bridge
Operating temperature: -40...125°C
Turn-off time: 65ns
Turn-on time: 95ns
Power: 1.6W
Integrated circuit features: charge pump; dead time; integrated bootstrap functionality
Anzahl je Verpackung: 1 Stücke
auf Bestellung 22 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
11+7.11 EUR
12+6.39 EUR
13+5.65 EUR
25+5.08 EUR
100+4.73 EUR
Mindestbestellmenge: 11
Im Einkaufswagen  Stück im Wert von  UAH
IR2010STRPBF pVersion=0046&contRep=ZT&docId=005056AB90B41EDA93E4F97CE2DB20C4&compId=IR2010SPBF.pdf?ci_sign=7f2358c95a7abe46aba0e75f703e0870e922928f
IR2010STRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO16
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-/low-side
Output current: -3...3A
Number of channels: 2
Mounting: SMD
Case: SO16
Kind of package: reel; tape
Supply voltage: 10...20V DC
Voltage class: 200V
Topology: MOSFET half-bridge
Operating temperature: -40...125°C
Turn-off time: 65ns
Turn-on time: 95ns
Power: 1.25W
Anzahl je Verpackung: 1 Stücke
auf Bestellung 975 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
21+3.46 EUR
27+2.69 EUR
Mindestbestellmenge: 21
Im Einkaufswagen  Stück im Wert von  UAH
IR2011SPBF description ir2011.pdf?fileId=5546d462533600a4015355c49b831663
Hersteller: INFINEON TECHNOLOGIES
IR2011SPBF MOSFET/IGBT drivers
auf Bestellung 13 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
13+5.51 EUR
20+3.58 EUR
Mindestbestellmenge: 13
Im Einkaufswagen  Stück im Wert von  UAH
IR2101PBF description ir2101.pdf
IR2101PBF
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; DIP8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: DIP8
Output current: -270...130mA
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-off time: 150ns
Turn-on time: 160ns
Power: 1W
Anzahl je Verpackung: 1 Stücke
auf Bestellung 70 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
21+3.47 EUR
25+2.97 EUR
27+2.73 EUR
30+2.43 EUR
50+2.26 EUR
100+2.13 EUR
250+2.07 EUR
Mindestbestellmenge: 21
Im Einkaufswagen  Stück im Wert von  UAH
IR2101STRPBF description IR2101SPBF.pdf
IR2101STRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Output current: -270...130mA
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Voltage class: 600V
Turn-off time: 150ns
Turn-on time: 160ns
Power: 625mW
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2162 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
50+1.44 EUR
68+1.06 EUR
75+0.96 EUR
80+0.9 EUR
100+0.87 EUR
Mindestbestellmenge: 50
Im Einkaufswagen  Stück im Wert von  UAH
IR2102STRPBF IRSDS17613-1.pdf?t.download=true&u=5oefqw
IR2102STRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Output current: -270...130mA
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Voltage class: 600V
Turn-off time: 150ns
Turn-on time: 160ns
Power: 625mW
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1446 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
44+1.63 EUR
50+1.43 EUR
59+1.22 EUR
Mindestbestellmenge: 44
Im Einkaufswagen  Stück im Wert von  UAH
IR2103STRPBF description ir2103.pdf?fileId=5546d462533600a4015355c7b54b166f
IR2103STRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Output current: -270...130mA
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Voltage class: 600V
Turn-off time: 150ns
Turn-on time: 680ns
Power: 625mW
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2462 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
66+1.09 EUR
68+1.06 EUR
77+0.93 EUR
80+0.9 EUR
Mindestbestellmenge: 66
Im Einkaufswagen  Stück im Wert von  UAH
IR2104PBF description IR2104PBF.pdf
IR2104PBF
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; DIP8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: DIP8
Output current: -270...130mA
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-off time: 150ns
Turn-on time: 680ns
Power: 1W
Anzahl je Verpackung: 1 Stücke
auf Bestellung 202 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
21+3.55 EUR
27+2.69 EUR
29+2.5 EUR
50+2.37 EUR
100+2.26 EUR
250+2.14 EUR
Mindestbestellmenge: 21
Im Einkaufswagen  Stück im Wert von  UAH
IR2104SPBF description ir2104.pdf
IR2104SPBF
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Output current: -270...130mA
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-off time: 150ns
Turn-on time: 680ns
Power: 625mW
Anzahl je Verpackung: 1 Stücke
auf Bestellung 122 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
33+2.23 EUR
38+1.89 EUR
43+1.7 EUR
49+1.49 EUR
50+1.44 EUR
Mindestbestellmenge: 33
Im Einkaufswagen  Stück im Wert von  UAH
IR2104STRPBF description IR2104PBF.pdf
IR2104STRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Output current: -270...130mA
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Voltage class: 600V
Turn-off time: 150ns
Turn-on time: 680ns
Power: 625mW
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2297 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
50+1.44 EUR
69+1.05 EUR
75+0.96 EUR
80+0.9 EUR
100+0.85 EUR
250+0.8 EUR
500+0.79 EUR
Mindestbestellmenge: 50
Im Einkaufswagen  Stück im Wert von  UAH
IR2106SPBF ir2106.pdf
IR2106SPBF
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Output current: -0.35...0.2A
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-off time: 200ns
Turn-on time: 220ns
Power: 625mW
Anzahl je Verpackung: 1 Stücke
auf Bestellung 77 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
23+3.25 EUR
25+2.92 EUR
29+2.55 EUR
95+2.16 EUR
190+2.14 EUR
Mindestbestellmenge: 23
Im Einkaufswagen  Stück im Wert von  UAH
IR2106STRPBF description ir2106.pdf?fileId=5546d462533600a4015355c7cfc51673
IR2106STRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Output current: -0.35...0.2A
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Voltage class: 600V
Turn-off time: 200ns
Turn-on time: 220ns
Power: 625mW
Anzahl je Verpackung: 1 Stücke
auf Bestellung 666 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
55+1.3 EUR
57+1.27 EUR
Mindestbestellmenge: 55
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IR21094SPBF IR21094SPBF.pdf
IR21094SPBF
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO14
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO14
Output current: -250...120mA
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-off time: 200ns
Turn-on time: 750ns
Power: 1W
Anzahl je Verpackung: 1 Stücke
auf Bestellung 16 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
16+4.46 EUR
Mindestbestellmenge: 16
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IR21094STRPBF IR21094SPBF.pdf
IR21094STRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO14
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO14
Output current: -250...120mA
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Voltage class: 600V
Turn-off time: 200ns
Turn-on time: 750ns
Power: 1W
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1579 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
38+1.92 EUR
50+1.44 EUR
54+1.34 EUR
57+1.26 EUR
100+1.2 EUR
250+1.19 EUR
Mindestbestellmenge: 38
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IR2109PBF IR21094SPBF.pdf
IR2109PBF
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; DIP8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: DIP8
Output current: -250...120mA
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-off time: 200ns
Turn-on time: 750ns
Power: 1W
Anzahl je Verpackung: 1 Stücke
auf Bestellung 51 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
21+3.46 EUR
28+2.6 EUR
30+2.43 EUR
50+2.3 EUR
100+2.19 EUR
Mindestbestellmenge: 21
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IR2109STRPBF IR21094SPBF.pdf
IR2109STRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Output current: -250...120mA
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Voltage class: 600V
Turn-off time: 200ns
Turn-on time: 750ns
Power: 625mW
Anzahl je Verpackung: 1 Stücke
auf Bestellung 3718 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
55+1.3 EUR
65+1.12 EUR
69+1.04 EUR
Mindestbestellmenge: 55
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IR2110PBF ir2110_2113.pdf
IR2110PBF
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; 1.6W
Mounting: THT
Operating temperature: -40...125°C
Output current: -2...2A
Power: 1.6W
Number of channels: 2
Supply voltage: 10...20V DC
Turn-off time: 111ns
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Type of integrated circuit: driver
Case: DIP14
Voltage class: 500V
Kind of package: tube
Turn-on time: 145ns
Anzahl je Verpackung: 1 Stücke
auf Bestellung 87 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
22+3.4 EUR
24+3 EUR
28+2.63 EUR
29+2.47 EUR
50+2.37 EUR
100+2.26 EUR
250+2.2 EUR
Mindestbestellmenge: 22
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IR2110SPBF description ir2110_2113.pdf
IR2110SPBF
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; Ch: 2
Mounting: SMD
Operating temperature: -40...125°C
Output current: -2...2A
Power: 1.25W
Number of channels: 2
Supply voltage: 10...20V DC
Turn-off time: 111ns
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Type of integrated circuit: driver
Case: SO16-W
Voltage class: 500V
Kind of package: tube
Turn-on time: 145ns
Anzahl je Verpackung: 1 Stücke
auf Bestellung 5 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
5+14.3 EUR
10+7.15 EUR
25+2.86 EUR
45+2.69 EUR
135+2.37 EUR
270+2.19 EUR
540+2 EUR
Mindestbestellmenge: 5
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IR2110STRPBF description IR2110STRPBF.pdf
IR2110STRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; Ch: 2
Mounting: SMD
Operating temperature: -40...125°C
Output current: -2...2A
Power: 1.25W
Number of channels: 2
Supply voltage: 10...20V DC
Turn-off time: 111ns
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Type of integrated circuit: driver
Case: SO16-W
Voltage class: 500V
Kind of package: reel; tape
Turn-on time: 145ns
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1231 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
23+3.2 EUR
25+2.9 EUR
30+2.39 EUR
33+2.2 EUR
50+2.09 EUR
100+1.99 EUR
250+1.87 EUR
Mindestbestellmenge: 23
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IR2111PBF description ir2111.pdf
IR2111PBF
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; DIP8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: DIP8
Output current: -420...200mA
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-off time: 190ns
Turn-on time: 830ns
Power: 1W
Anzahl je Verpackung: 1 Stücke
auf Bestellung 83 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
24+3.09 EUR
31+2.36 EUR
34+2.16 EUR
Mindestbestellmenge: 24
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IR2111SPBF description IR2111SPBF.pdf
IR2111SPBF
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Output current: -420...200mA
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-off time: 190ns
Turn-on time: 830ns
Power: 625mW
Anzahl je Verpackung: 1 Stücke
auf Bestellung 112 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
50+1.44 EUR
Mindestbestellmenge: 50
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IR2112PBF description ir2112.pdf
IR2112PBF
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; 1.6W
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: DIP14
Output current: -420...200mA
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-off time: 145ns
Turn-on time: 205ns
Power: 1.6W
Anzahl je Verpackung: 1 Stücke
auf Bestellung 52 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
16+4.5 EUR
21+3.42 EUR
25+3.17 EUR
50+3.03 EUR
100+2.9 EUR
500+2.86 EUR
Mindestbestellmenge: 16
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IR2112SPBF description ir2112.pdf
IR2112SPBF
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; Ch: 2
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO16-W
Output current: -420...200mA
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-off time: 145ns
Turn-on time: 205ns
Power: 1.25W
Anzahl je Verpackung: 1 Stücke
auf Bestellung 44 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
26+2.76 EUR
45+2.69 EUR
Mindestbestellmenge: 26
Im Einkaufswagen  Stück im Wert von  UAH
IR2112STRPBF IR2112STRPBF.pdf
IR2112STRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; Ch: 2
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO16-W
Output current: -420...200mA
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Voltage class: 600V
Turn-off time: 145ns
Turn-on time: 205ns
Power: 1.25W
Anzahl je Verpackung: 1 Stücke
auf Bestellung 747 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
25+2.89 EUR
34+2.14 EUR
35+2.06 EUR
Mindestbestellmenge: 25
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IR2113PBF description ir2110_2113.pdf
IR2113PBF
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; 1.6W
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: DIP14
Output current: -2...2A
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-off time: 111ns
Turn-on time: 145ns
Power: 1.6W
Anzahl je Verpackung: 1 Stücke
auf Bestellung 58 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
24+3.06 EUR
25+2.89 EUR
29+2.52 EUR
31+2.37 EUR
100+2.29 EUR
Mindestbestellmenge: 24
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IR2113SPBF description IR2113SPBF.pdf
IR2113SPBF
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; Ch: 2
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO16-W
Output current: -2...2A
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-off time: 111ns
Turn-on time: 145ns
Power: 1.25W
Anzahl je Verpackung: 1 Stücke
auf Bestellung 69 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
16+4.7 EUR
17+4.28 EUR
20+3.65 EUR
25+3.25 EUR
35+3.15 EUR
45+3.06 EUR
225+2.99 EUR
Mindestbestellmenge: 16
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IR2113STRPBF IR2113STRPBF.pdf
IR2113STRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; Ch: 2
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO16-W
Output current: -2...2A
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Voltage class: 600V
Turn-off time: 111ns
Turn-on time: 145ns
Power: 1.25W
Anzahl je Verpackung: 1 Stücke
auf Bestellung 864 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
26+2.82 EUR
28+2.59 EUR
30+2.45 EUR
32+2.25 EUR
50+2.1 EUR
100+1.99 EUR
125+1.96 EUR
Mindestbestellmenge: 26
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IR2114SSPBF pVersion=0046&contRep=ZT&docId=005056AB752F1EE89DA33D55348713D7&compId=IR2114SSPBF.pdf?ci_sign=76268fd6f1521786ea6d8559b91e974700f61597
IR2114SSPBF
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT half-bridge; high-/low-side,gate driver; SSOP24
Mounting: SMD
Operating temperature: -40...125°C
Output current: -1.5...1A
Power: 1.5W
Number of channels: 2
Supply voltage: 10.4...20V DC
Turn-off time: 440ns
Topology: IGBT half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Type of integrated circuit: driver
Case: SSOP24
Voltage class: 0.6/1.2kV
Turn-on time: 440ns
Anzahl je Verpackung: 1 Stücke
auf Bestellung 30 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
9+8.59 EUR
Mindestbestellmenge: 9
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IR2117PBF ir2117.pdf
IR2117PBF
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,gate driver; DIP8; 1W
Type of integrated circuit: driver
Topology: single transistor
Kind of integrated circuit: gate driver; high-side
Case: DIP8
Output current: -420...200mA
Power: 1W
Number of channels: 1
Supply voltage: 10...20V DC
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 125ns
Turn-off time: 105ns
Anzahl je Verpackung: 1 Stücke
auf Bestellung 233 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
23+3.12 EUR
27+2.7 EUR
30+2.4 EUR
31+2.32 EUR
50+2.2 EUR
250+2.16 EUR
Mindestbestellmenge: 23
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