Produkte > INFINEON TECHNOLOGIES > Alle Produkte des Herstellers INFINEON TECHNOLOGIES (148904) > Seite 1267 nach 2482
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
BFR181WH6327XTSA1 | INFINEON TECHNOLOGIES |
Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; RF; 12V; 20mA; 0.175W; SOT323 Type of transistor: NPN Polarisation: bipolar Power dissipation: 0.175W Case: SOT323 Mounting: SMD Collector current: 20mA Collector-emitter voltage: 12V Frequency: 8GHz Kind of transistor: RF Kind of package: reel; tape Anzahl je Verpackung: 1 Stücke |
auf Bestellung 7799 Stücke: Lieferzeit 7-14 Tag (e) |
|
||||||||||||||
|
BFR182WH6327XTSA1 | INFINEON TECHNOLOGIES |
Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; RF; 12V; 35mA; 0.25W; SOT323 Type of transistor: NPN Polarisation: bipolar Power dissipation: 0.25W Case: SOT323 Mounting: SMD Collector current: 35mA Collector-emitter voltage: 12V Frequency: 8GHz Kind of transistor: RF Kind of package: reel; tape Anzahl je Verpackung: 1 Stücke |
auf Bestellung 1348 Stücke: Lieferzeit 7-14 Tag (e) |
|
||||||||||||||
| BFR193FH6327 | INFINEON TECHNOLOGIES |
BFR193FH6327 NPN SMD transistors |
auf Bestellung 1345 Stücke: Lieferzeit 7-14 Tag (e) |
|
|||||||||||||||
| BFR193L3E6327 | INFINEON TECHNOLOGIES | BFR193L3E6327 NPN SMD transistors |
auf Bestellung 754 Stücke: Lieferzeit 7-14 Tag (e) |
|
|||||||||||||||
|
BFR193WH6327XTSA1 | INFINEON TECHNOLOGIES |
Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; RF; 20V; 80mA; 0.58W; SOT323 Type of transistor: NPN Polarisation: bipolar Power dissipation: 0.58W Case: SOT323 Mounting: SMD Collector current: 80mA Collector-emitter voltage: 20V Frequency: 8GHz Kind of transistor: RF Kind of package: reel; tape Anzahl je Verpackung: 1 Stücke |
auf Bestellung 1874 Stücke: Lieferzeit 7-14 Tag (e) |
|
||||||||||||||
|
BFR360FH6327XTSA1 | INFINEON TECHNOLOGIES |
Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; RF; 6V; 35mA; 0.21W; TSFP-3 Kind of transistor: RF Case: TSFP-3 Type of transistor: NPN Kind of package: reel; tape Mounting: SMD Collector current: 35mA Power dissipation: 0.21W Collector-emitter voltage: 6V Frequency: 14GHz Current gain: 90...160 Polarisation: bipolar Anzahl je Verpackung: 1 Stücke |
auf Bestellung 2801 Stücke: Lieferzeit 7-14 Tag (e) |
|
||||||||||||||
| BFR380FH6327 | INFINEON TECHNOLOGIES | BFR380FH6327 NPN SMD transistors |
auf Bestellung 5583 Stücke: Lieferzeit 7-14 Tag (e) |
|
|||||||||||||||
| BFR380L3E6327 | INFINEON TECHNOLOGIES | BFR380L3E6327 NPN SMD transistors |
auf Bestellung 11829 Stücke: Lieferzeit 7-14 Tag (e) |
|
|||||||||||||||
|
BFR92PE6327 | INFINEON TECHNOLOGIES |
Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; RF; 15V; 45mA; 0.28W; SOT23 Polarisation: bipolar Case: SOT23 Kind of package: reel; tape Type of transistor: NPN Mounting: SMD Kind of transistor: RF Collector current: 45mA Power dissipation: 0.28W Collector-emitter voltage: 15V Frequency: 5GHz Anzahl je Verpackung: 1 Stücke |
auf Bestellung 3820 Stücke: Lieferzeit 7-14 Tag (e) |
|
||||||||||||||
|
BFR93AE6327 | INFINEON TECHNOLOGIES |
Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; RF; 20V; 90mA; 0.3W; SOT23 Type of transistor: NPN Polarisation: bipolar Kind of transistor: RF Collector-emitter voltage: 20V Collector current: 90mA Power dissipation: 0.3W Case: SOT23 Mounting: SMD Kind of package: reel; tape Frequency: 6GHz Anzahl je Verpackung: 1 Stücke |
auf Bestellung 5959 Stücke: Lieferzeit 7-14 Tag (e) |
|
||||||||||||||
|
BFR93AWH6327 | INFINEON TECHNOLOGIES |
Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; RF; 20V; 90mA; 0.3W; SOT323 Type of transistor: NPN Polarisation: bipolar Kind of transistor: RF Collector-emitter voltage: 20V Collector current: 90mA Power dissipation: 0.3W Case: SOT323 Mounting: SMD Kind of package: reel; tape Frequency: 6GHz Anzahl je Verpackung: 1 Stücke |
auf Bestellung 9195 Stücke: Lieferzeit 7-14 Tag (e) |
|
||||||||||||||
| BFS483H6327XTSA1 | INFINEON TECHNOLOGIES |
BFS483H6327 NPN SMD transistors |
auf Bestellung 2711 Stücke: Lieferzeit 7-14 Tag (e) |
|
|||||||||||||||
| BGSX22G2A10E6327XTSA1 | INFINEON TECHNOLOGIES |
BGSX22G2A10 Analog multiplexers and switches |
auf Bestellung 56 Stücke: Lieferzeit 7-14 Tag (e) |
|
|||||||||||||||
| BGT24MTR12E6327XUMA1 | INFINEON TECHNOLOGIES |
BGT24MTR12 Integrated circuits - others |
auf Bestellung 475 Stücke: Lieferzeit 7-14 Tag (e) |
|
|||||||||||||||
|
BSC028N06NSATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 60V; 100A; 83W; PG-TDSON-8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 100A Power dissipation: 83W Case: PG-TDSON-8 Gate-source voltage: ±20V On-state resistance: 2.8mΩ Mounting: SMD Kind of channel: enhancement Technology: OptiMOS™ 3 Anzahl je Verpackung: 1 Stücke |
auf Bestellung 2024 Stücke: Lieferzeit 7-14 Tag (e) |
|
||||||||||||||
|
BSC030N04NSGATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 40V; 100A; 83W; PG-TDSON-8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 100A Power dissipation: 83W Case: PG-TDSON-8 Gate-source voltage: ±20V On-state resistance: 3mΩ Mounting: SMD Kind of channel: enhancement Technology: OptiMOS™ 3 Anzahl je Verpackung: 1 Stücke |
auf Bestellung 3450 Stücke: Lieferzeit 7-14 Tag (e) |
|
||||||||||||||
|
BSC030P03NS3GAUMA1 | INFINEON TECHNOLOGIES |
Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -30V; -100A; 125W; PG-TDSON-8 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -30V Drain current: -100A Power dissipation: 125W Case: PG-TDSON-8 Gate-source voltage: ±25V On-state resistance: 3mΩ Mounting: SMD Kind of channel: enhancement Technology: OptiMOS™ P3 Anzahl je Verpackung: 1 Stücke |
auf Bestellung 3134 Stücke: Lieferzeit 7-14 Tag (e) |
|
||||||||||||||
| BSC032N04LSATMA1 | INFINEON TECHNOLOGIES |
BSC032N04LSATMA1 SMD N channel transistors |
auf Bestellung 1144 Stücke: Lieferzeit 7-14 Tag (e) |
|
|||||||||||||||
|
BSC035N10NS5ATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 100V; 100A; 156W; PG-TDSON-8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 100A Power dissipation: 156W Case: PG-TDSON-8 Gate-source voltage: ±20V On-state resistance: 3.5mΩ Mounting: SMD Kind of channel: enhancement Technology: OptiMOS™ 5 Anzahl je Verpackung: 1 Stücke |
auf Bestellung 4141 Stücke: Lieferzeit 7-14 Tag (e) |
|
||||||||||||||
|
BSC080N03MSGATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 30V; 53A; 35W; PG-TDSON-8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 53A Power dissipation: 35W Case: PG-TDSON-8 Gate-source voltage: ±20V On-state resistance: 8mΩ Mounting: SMD Kind of channel: enhancement Technology: OptiMOS™ 3 Anzahl je Verpackung: 1 Stücke |
auf Bestellung 1066 Stücke: Lieferzeit 7-14 Tag (e) |
|
||||||||||||||
| BSC0902NSIATMA1 | INFINEON TECHNOLOGIES |
BSC0902NSIATMA1 SMD N channel transistors |
auf Bestellung 4462 Stücke: Lieferzeit 7-14 Tag (e) |
|
|||||||||||||||
| BSC0906NSATMA1 | INFINEON TECHNOLOGIES |
BSC0906NSATMA1 SMD N channel transistors |
auf Bestellung 2399 Stücke: Lieferzeit 7-14 Tag (e) |
|
|||||||||||||||
| BSC0909NSATMA1 | INFINEON TECHNOLOGIES |
BSC0909NSATMA1 SMD N channel transistors |
auf Bestellung 88 Stücke: Lieferzeit 7-14 Tag (e) |
|
|||||||||||||||
| BSC093N04LSGATMA1 | INFINEON TECHNOLOGIES |
BSC093N04LSGATMA1 SMD N channel transistors |
auf Bestellung 3195 Stücke: Lieferzeit 7-14 Tag (e) |
|
|||||||||||||||
| BSC100N06LS3GATMA1 | INFINEON TECHNOLOGIES |
BSC100N06LS3GATMA1 SMD N channel transistors |
auf Bestellung 2049 Stücke: Lieferzeit 7-14 Tag (e) |
|
|||||||||||||||
|
BSC123N08NS3GATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 80V; 55A; 66W; PG-TDSON-8 Kind of channel: enhancement Case: PG-TDSON-8 Polarisation: unipolar Type of transistor: N-MOSFET Technology: OptiMOS™ 3 Mounting: SMD On-state resistance: 12.3mΩ Gate-source voltage: ±20V Drain current: 55A Power dissipation: 66W Drain-source voltage: 80V Anzahl je Verpackung: 1 Stücke |
auf Bestellung 3152 Stücke: Lieferzeit 7-14 Tag (e) |
|
||||||||||||||
| BSC190N15NS3GATMA1 | INFINEON TECHNOLOGIES |
BSC190N15NS3GATMA1 SMD N channel transistors |
auf Bestellung 1446 Stücke: Lieferzeit 7-14 Tag (e) |
|
|||||||||||||||
| BSC340N08NS3GATMA1 | INFINEON TECHNOLOGIES |
BSC340N08NS3GATMA1 SMD N channel transistors |
auf Bestellung 2738 Stücke: Lieferzeit 7-14 Tag (e) |
|
|||||||||||||||
|
BSD223PH6327XTSA1 | INFINEON TECHNOLOGIES |
Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -20V; -0.39A; 0.25W; PG-SOT-363 Case: PG-SOT-363 Mounting: SMD Drain-source voltage: -20V Drain current: -0.39A On-state resistance: 1.2Ω Polarisation: unipolar Power dissipation: 0.25W Technology: OptiMOS™ P Type of transistor: P-MOSFET Kind of channel: enhancement Gate-source voltage: ±12V Anzahl je Verpackung: 1 Stücke |
auf Bestellung 1819 Stücke: Lieferzeit 7-14 Tag (e) |
|
||||||||||||||
| BSD235CH6327XTSA1 | INFINEON TECHNOLOGIES |
BSD235CH6327XTSA1 Multi channel transistors |
auf Bestellung 2523 Stücke: Lieferzeit 7-14 Tag (e) |
|
|||||||||||||||
| BSD235NH6327XTSA1 | INFINEON TECHNOLOGIES |
BSD235NH6327XTSA1 Multi channel transistors |
auf Bestellung 194 Stücke: Lieferzeit 7-14 Tag (e) |
|
|||||||||||||||
| BSD840NH6327XTSA1 | INFINEON TECHNOLOGIES |
BSD840NH6327XTSA1 Multi channel transistors |
auf Bestellung 3806 Stücke: Lieferzeit 7-14 Tag (e) |
|
|||||||||||||||
| BSL215CH6327XTSA1 | INFINEON TECHNOLOGIES |
BSL215CH6327XTSA1 Multi channel transistors |
auf Bestellung 2117 Stücke: Lieferzeit 7-14 Tag (e) |
|
|||||||||||||||
|
BSL307SPH6327XTSA1 | INFINEON TECHNOLOGIES |
Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -30V; -5.5A; 2W; PG-TSOP-6 Case: PG-TSOP-6 Mounting: SMD Drain-source voltage: -30V Drain current: -5.5A On-state resistance: 43mΩ Polarisation: unipolar Power dissipation: 2W Technology: OptiMOS™ P Type of transistor: P-MOSFET Kind of channel: enhancement Gate-source voltage: ±20V Anzahl je Verpackung: 1 Stücke |
auf Bestellung 1005 Stücke: Lieferzeit 7-14 Tag (e) |
|
||||||||||||||
| BSL308CH6327XTSA1 | INFINEON TECHNOLOGIES |
BSL308CH6327XTSA1 Multi channel transistors |
auf Bestellung 1724 Stücke: Lieferzeit 7-14 Tag (e) |
|
|||||||||||||||
| BSL308PEH6327XTSA1 | INFINEON TECHNOLOGIES |
BSL308PEH6327XTSA1 Multi channel transistors |
auf Bestellung 1932 Stücke: Lieferzeit 7-14 Tag (e) |
|
|||||||||||||||
| BSL316CH6327XTSA1 | INFINEON TECHNOLOGIES |
BSL316CH6327XTSA1 Multi channel transistors |
auf Bestellung 1330 Stücke: Lieferzeit 7-14 Tag (e) |
|
|||||||||||||||
|
BSL606SNH6327XTSA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 60V; 4.5A; 2W; PG-TSOP-6 Type of transistor: N-MOSFET Technology: OptiMOS™ 3 Case: PG-TSOP-6 Mounting: SMD Polarisation: unipolar On-state resistance: 95mΩ Power dissipation: 2W Gate-source voltage: ±20V Drain-source voltage: 60V Drain current: 4.5A Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 4585 Stücke: Lieferzeit 7-14 Tag (e) |
|
||||||||||||||
| BSO110N03MSGXUMA1 | INFINEON TECHNOLOGIES |
BSO110N03MSGXUMA1 SMD N channel transistors |
auf Bestellung 2488 Stücke: Lieferzeit 7-14 Tag (e) |
|
|||||||||||||||
|
BSO207PHXUMA1 | INFINEON TECHNOLOGIES |
Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -20V; -5A; 1.6W; PG-DSO-8 Case: PG-DSO-8 Mounting: SMD Drain-source voltage: -20V Drain current: -5A On-state resistance: 45mΩ Polarisation: unipolar Power dissipation: 1.6W Technology: OptiMOS™ P Type of transistor: P-MOSFET Kind of channel: enhancement Gate-source voltage: ±12V Anzahl je Verpackung: 1 Stücke |
auf Bestellung 2211 Stücke: Lieferzeit 7-14 Tag (e) |
|
||||||||||||||
|
BSO211PHXUMA1 | INFINEON TECHNOLOGIES |
Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -20V; -4.6A; 1.6W; PG-DSO-8 Case: PG-DSO-8 Mounting: SMD Drain-source voltage: -20V Drain current: -4.6A On-state resistance: 67mΩ Polarisation: unipolar Power dissipation: 1.6W Technology: OptiMOS™ P Type of transistor: P-MOSFET Kind of channel: enhancement Gate-source voltage: ±12V Anzahl je Verpackung: 1 Stücke |
auf Bestellung 2320 Stücke: Lieferzeit 7-14 Tag (e) |
|
||||||||||||||
| BSP125H6327XTSA1 | INFINEON TECHNOLOGIES |
BSP125H6327XTSA1 SMD N channel transistors |
auf Bestellung 961 Stücke: Lieferzeit 7-14 Tag (e) |
|
|||||||||||||||
|
BSP129H6327XTSA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 240V; 0.05A; 1.8W; SOT223 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 240V Drain current: 50mA Power dissipation: 1.8W Case: SOT223 On-state resistance: 6.5Ω Mounting: SMD Kind of channel: depletion Technology: SIPMOS™ Gate-source voltage: ±20V Anzahl je Verpackung: 1 Stücke |
auf Bestellung 1302 Stücke: Lieferzeit 7-14 Tag (e) |
|
||||||||||||||
|
BSP135H6327XTSA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 600V; 0.12A; 1.8W; SOT223 Power dissipation: 1.8W Gate-source voltage: ±20V On-state resistance: 60Ω Drain-source voltage: 600V Polarisation: unipolar Kind of channel: depletion Type of transistor: N-MOSFET Technology: SIPMOS™ Mounting: SMD Case: SOT223 Drain current: 0.12A Anzahl je Verpackung: 1 Stücke |
auf Bestellung 490 Stücke: Lieferzeit 7-14 Tag (e) |
|
||||||||||||||
|
BSP149H6327XTSA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 200V; 0.53A; Idm: 2.6A; 1.8W; SOT223 Type of transistor: N-MOSFET Technology: SIPMOS™ Polarisation: unipolar Drain-source voltage: 200V Drain current: 0.53A Pulsed drain current: 2.6A Power dissipation: 1.8W Case: SOT223 Gate-source voltage: ±20V On-state resistance: 3.5Ω Mounting: SMD Kind of channel: depletion Anzahl je Verpackung: 1 Stücke |
auf Bestellung 694 Stücke: Lieferzeit 7-14 Tag (e) |
|
||||||||||||||
|
BSP170PH6327XTSA1 | INFINEON TECHNOLOGIES |
Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -60V; -1.9A; 1.8W; PG-SOT223 Case: PG-SOT223 Type of transistor: P-MOSFET Technology: SIPMOS™ Mounting: SMD Polarisation: unipolar Drain-source voltage: -60V Drain current: -1.9A On-state resistance: 0.3Ω Power dissipation: 1.8W Gate-source voltage: ±20V Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 1097 Stücke: Lieferzeit 7-14 Tag (e) |
|
||||||||||||||
|
BSP171PH6327XTSA1 | INFINEON TECHNOLOGIES |
Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -60V; -1.9A; 1.8W; PG-SOT223 Case: PG-SOT223 Type of transistor: P-MOSFET Technology: SIPMOS™ Mounting: SMD Polarisation: unipolar Drain-source voltage: -60V Drain current: -1.9A On-state resistance: 0.3Ω Power dissipation: 1.8W Gate-source voltage: ±20V Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 2861 Stücke: Lieferzeit 7-14 Tag (e) |
|
||||||||||||||
|
BSP295H6327XTSA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 60V; 1.8A; 1.8W; SOT223 Mounting: SMD Power dissipation: 1.8W Drain current: 1.8A Gate-source voltage: ±20V Drain-source voltage: 60V Polarisation: unipolar Kind of channel: enhancement Technology: SIPMOS™ Type of transistor: N-MOSFET Case: SOT223 On-state resistance: 0.3Ω Anzahl je Verpackung: 1 Stücke |
auf Bestellung 576 Stücke: Lieferzeit 7-14 Tag (e) |
|
||||||||||||||
|
BSP296NH6327XTSA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 100V; 1.2A; 1.8W; SOT223 Mounting: SMD Power dissipation: 1.8W Drain current: 1.2A Gate-source voltage: ±20V Drain-source voltage: 100V Polarisation: unipolar Kind of channel: enhancement Technology: OptiMOS™ Type of transistor: N-MOSFET Case: SOT223 On-state resistance: 0.8Ω Anzahl je Verpackung: 1 Stücke |
auf Bestellung 1018 Stücke: Lieferzeit 7-14 Tag (e) |
|
||||||||||||||
|
BSP297H6327XTSA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 200V; 0.66A; 1.8W; SOT223 Mounting: SMD Power dissipation: 1.8W Drain current: 0.66A Gate-source voltage: ±20V Drain-source voltage: 200V Polarisation: unipolar Kind of channel: enhancement Technology: SIPMOS™ Type of transistor: N-MOSFET Case: SOT223 On-state resistance: 1.8Ω Anzahl je Verpackung: 1 Stücke |
auf Bestellung 641 Stücke: Lieferzeit 7-14 Tag (e) |
|
||||||||||||||
| BSP315PH6327XTSA1 | INFINEON TECHNOLOGIES |
BSP315PH6327XTSA1 SMD P channel transistors |
auf Bestellung 1213 Stücke: Lieferzeit 7-14 Tag (e) |
|
|||||||||||||||
|
BSP316PH6327XTSA1 | INFINEON TECHNOLOGIES |
Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -100V; -0.68A; 1.8W; PG-SOT223 Type of transistor: P-MOSFET Mounting: SMD Technology: SIPMOS™ Drain-source voltage: -100V Drain current: -0.68A Power dissipation: 1.8W On-state resistance: 1.8Ω Gate-source voltage: ±20V Polarisation: unipolar Case: PG-SOT223 Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 724 Stücke: Lieferzeit 7-14 Tag (e) |
|
||||||||||||||
|
BSP317PH6327XTSA1 | INFINEON TECHNOLOGIES |
Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -250V; -0.43A; 1.8W; PG-SOT223 Case: PG-SOT223 Mounting: SMD Technology: SIPMOS™ Kind of channel: enhancement Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -250V Drain current: -430mA On-state resistance: 4Ω Power dissipation: 1.8W Gate-source voltage: ±20V Anzahl je Verpackung: 1 Stücke |
auf Bestellung 2417 Stücke: Lieferzeit 7-14 Tag (e) |
|
||||||||||||||
| BSP322PH6327XTSA1 | INFINEON TECHNOLOGIES |
BSP322PH6327XTSA1 SMD P channel transistors |
auf Bestellung 782 Stücke: Lieferzeit 7-14 Tag (e) |
|
|||||||||||||||
| BSP324H6327XTSA1 | INFINEON TECHNOLOGIES |
BSP324H6327XTSA1 SMD N channel transistors |
auf Bestellung 300 Stücke: Lieferzeit 7-14 Tag (e) |
|
|||||||||||||||
| BSP373NH6327XTSA1 | INFINEON TECHNOLOGIES |
BSP373NH6327XTSA1 SMD N channel transistors |
auf Bestellung 1708 Stücke: Lieferzeit 7-14 Tag (e) |
|
|||||||||||||||
|
BSP452 | INFINEON TECHNOLOGIES |
Category: Power switches - integrated circuitsDescription: IC: power switch; high-side; 0.7A; Ch: 1; N-Channel; SMD; SOT223-3 Type of integrated circuit: power switch Kind of integrated circuit: high-side Output current: 0.7A Number of channels: 1 Kind of output: N-Channel Mounting: SMD Case: SOT223-3 On-state resistance: 0.16Ω Technology: Classic PROFET Output voltage: 40V Anzahl je Verpackung: 1 Stücke |
auf Bestellung 2229 Stücke: Lieferzeit 7-14 Tag (e) |
|
||||||||||||||
| BSP613PH6327XTSA1 | INFINEON TECHNOLOGIES |
BSP613PH6327XTSA1 SMD P channel transistors |
auf Bestellung 484 Stücke: Lieferzeit 7-14 Tag (e) |
|
|||||||||||||||
| BSP742R | INFINEON TECHNOLOGIES | BSP742R Power switches - integrated circuits |
auf Bestellung 1732 Stücke: Lieferzeit 7-14 Tag (e) |
|
|||||||||||||||
| BSP742T | INFINEON TECHNOLOGIES | BSP742T Power switches - integrated circuits |
auf Bestellung 1517 Stücke: Lieferzeit 7-14 Tag (e) |
|
| BFR181WH6327XTSA1 |
![]() |
Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; RF; 12V; 20mA; 0.175W; SOT323
Type of transistor: NPN
Polarisation: bipolar
Power dissipation: 0.175W
Case: SOT323
Mounting: SMD
Collector current: 20mA
Collector-emitter voltage: 12V
Frequency: 8GHz
Kind of transistor: RF
Kind of package: reel; tape
Anzahl je Verpackung: 1 Stücke
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; RF; 12V; 20mA; 0.175W; SOT323
Type of transistor: NPN
Polarisation: bipolar
Power dissipation: 0.175W
Case: SOT323
Mounting: SMD
Collector current: 20mA
Collector-emitter voltage: 12V
Frequency: 8GHz
Kind of transistor: RF
Kind of package: reel; tape
Anzahl je Verpackung: 1 Stücke
auf Bestellung 7799 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 278+ | 0.26 EUR |
| 329+ | 0.22 EUR |
| 432+ | 0.17 EUR |
| 491+ | 0.15 EUR |
| 547+ | 0.13 EUR |
| 612+ | 0.12 EUR |
| BFR182WH6327XTSA1 |
![]() |
Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; RF; 12V; 35mA; 0.25W; SOT323
Type of transistor: NPN
Polarisation: bipolar
Power dissipation: 0.25W
Case: SOT323
Mounting: SMD
Collector current: 35mA
Collector-emitter voltage: 12V
Frequency: 8GHz
Kind of transistor: RF
Kind of package: reel; tape
Anzahl je Verpackung: 1 Stücke
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; RF; 12V; 35mA; 0.25W; SOT323
Type of transistor: NPN
Polarisation: bipolar
Power dissipation: 0.25W
Case: SOT323
Mounting: SMD
Collector current: 35mA
Collector-emitter voltage: 12V
Frequency: 8GHz
Kind of transistor: RF
Kind of package: reel; tape
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1348 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 295+ | 0.24 EUR |
| 358+ | 0.2 EUR |
| 398+ | 0.18 EUR |
| 431+ | 0.17 EUR |
| 500+ | 0.16 EUR |
| 1000+ | 0.14 EUR |
| BFR193FH6327 |
![]() |
Hersteller: INFINEON TECHNOLOGIES
BFR193FH6327 NPN SMD transistors
BFR193FH6327 NPN SMD transistors
auf Bestellung 1345 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 261+ | 0.27 EUR |
| 625+ | 0.11 EUR |
| 24000+ | 0.1 EUR |
| BFR193L3E6327 |
Hersteller: INFINEON TECHNOLOGIES
BFR193L3E6327 NPN SMD transistors
BFR193L3E6327 NPN SMD transistors
auf Bestellung 754 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 201+ | 0.36 EUR |
| 295+ | 0.24 EUR |
| 311+ | 0.23 EUR |
| 10000+ | 0.22 EUR |
| BFR193WH6327XTSA1 |
![]() |
Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; RF; 20V; 80mA; 0.58W; SOT323
Type of transistor: NPN
Polarisation: bipolar
Power dissipation: 0.58W
Case: SOT323
Mounting: SMD
Collector current: 80mA
Collector-emitter voltage: 20V
Frequency: 8GHz
Kind of transistor: RF
Kind of package: reel; tape
Anzahl je Verpackung: 1 Stücke
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; RF; 20V; 80mA; 0.58W; SOT323
Type of transistor: NPN
Polarisation: bipolar
Power dissipation: 0.58W
Case: SOT323
Mounting: SMD
Collector current: 80mA
Collector-emitter voltage: 20V
Frequency: 8GHz
Kind of transistor: RF
Kind of package: reel; tape
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1874 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 264+ | 0.27 EUR |
| 353+ | 0.2 EUR |
| 391+ | 0.18 EUR |
| 421+ | 0.17 EUR |
| 439+ | 0.16 EUR |
| 500+ | 0.14 EUR |
| BFR360FH6327XTSA1 |
![]() |
Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; RF; 6V; 35mA; 0.21W; TSFP-3
Kind of transistor: RF
Case: TSFP-3
Type of transistor: NPN
Kind of package: reel; tape
Mounting: SMD
Collector current: 35mA
Power dissipation: 0.21W
Collector-emitter voltage: 6V
Frequency: 14GHz
Current gain: 90...160
Polarisation: bipolar
Anzahl je Verpackung: 1 Stücke
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; RF; 6V; 35mA; 0.21W; TSFP-3
Kind of transistor: RF
Case: TSFP-3
Type of transistor: NPN
Kind of package: reel; tape
Mounting: SMD
Collector current: 35mA
Power dissipation: 0.21W
Collector-emitter voltage: 6V
Frequency: 14GHz
Current gain: 90...160
Polarisation: bipolar
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2801 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 278+ | 0.26 EUR |
| 348+ | 0.21 EUR |
| 391+ | 0.18 EUR |
| 459+ | 0.16 EUR |
| 516+ | 0.14 EUR |
| 569+ | 0.13 EUR |
| 625+ | 0.11 EUR |
| BFR380FH6327 |
Hersteller: INFINEON TECHNOLOGIES
BFR380FH6327 NPN SMD transistors
BFR380FH6327 NPN SMD transistors
auf Bestellung 5583 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 143+ | 0.5 EUR |
| 443+ | 0.16 EUR |
| 468+ | 0.15 EUR |
| BFR380L3E6327 |
Hersteller: INFINEON TECHNOLOGIES
BFR380L3E6327 NPN SMD transistors
BFR380L3E6327 NPN SMD transistors
auf Bestellung 11829 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 881+ | 0.081 EUR |
| 1044+ | 0.068 EUR |
| 1104+ | 0.065 EUR |
| 10000+ | 0.062 EUR |
| BFR92PE6327 |
![]() |
Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; RF; 15V; 45mA; 0.28W; SOT23
Polarisation: bipolar
Case: SOT23
Kind of package: reel; tape
Type of transistor: NPN
Mounting: SMD
Kind of transistor: RF
Collector current: 45mA
Power dissipation: 0.28W
Collector-emitter voltage: 15V
Frequency: 5GHz
Anzahl je Verpackung: 1 Stücke
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; RF; 15V; 45mA; 0.28W; SOT23
Polarisation: bipolar
Case: SOT23
Kind of package: reel; tape
Type of transistor: NPN
Mounting: SMD
Kind of transistor: RF
Collector current: 45mA
Power dissipation: 0.28W
Collector-emitter voltage: 15V
Frequency: 5GHz
Anzahl je Verpackung: 1 Stücke
auf Bestellung 3820 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 228+ | 0.31 EUR |
| 272+ | 0.26 EUR |
| 307+ | 0.23 EUR |
| 362+ | 0.2 EUR |
| 404+ | 0.18 EUR |
| 451+ | 0.16 EUR |
| 499+ | 0.14 EUR |
| BFR93AE6327 |
![]() |
Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; RF; 20V; 90mA; 0.3W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: RF
Collector-emitter voltage: 20V
Collector current: 90mA
Power dissipation: 0.3W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Frequency: 6GHz
Anzahl je Verpackung: 1 Stücke
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; RF; 20V; 90mA; 0.3W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: RF
Collector-emitter voltage: 20V
Collector current: 90mA
Power dissipation: 0.3W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Frequency: 6GHz
Anzahl je Verpackung: 1 Stücke
auf Bestellung 5959 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 186+ | 0.39 EUR |
| 246+ | 0.29 EUR |
| 288+ | 0.25 EUR |
| 323+ | 0.22 EUR |
| 358+ | 0.2 EUR |
| 388+ | 0.18 EUR |
| BFR93AWH6327 |
![]() |
Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; RF; 20V; 90mA; 0.3W; SOT323
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: RF
Collector-emitter voltage: 20V
Collector current: 90mA
Power dissipation: 0.3W
Case: SOT323
Mounting: SMD
Kind of package: reel; tape
Frequency: 6GHz
Anzahl je Verpackung: 1 Stücke
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; RF; 20V; 90mA; 0.3W; SOT323
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: RF
Collector-emitter voltage: 20V
Collector current: 90mA
Power dissipation: 0.3W
Case: SOT323
Mounting: SMD
Kind of package: reel; tape
Frequency: 6GHz
Anzahl je Verpackung: 1 Stücke
auf Bestellung 9195 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 264+ | 0.27 EUR |
| 376+ | 0.19 EUR |
| 451+ | 0.16 EUR |
| 500+ | 0.15 EUR |
| 1000+ | 0.14 EUR |
| 3000+ | 0.13 EUR |
| BFS483H6327XTSA1 |
![]() |
Hersteller: INFINEON TECHNOLOGIES
BFS483H6327 NPN SMD transistors
BFS483H6327 NPN SMD transistors
auf Bestellung 2711 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 110+ | 0.65 EUR |
| 133+ | 0.54 EUR |
| 141+ | 0.51 EUR |
| 147+ | 0.49 EUR |
| BGSX22G2A10E6327XTSA1 |
![]() |
Hersteller: INFINEON TECHNOLOGIES
BGSX22G2A10 Analog multiplexers and switches
BGSX22G2A10 Analog multiplexers and switches
auf Bestellung 56 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 56+ | 1.27 EUR |
| 100+ | 0.86 EUR |
| BGT24MTR12E6327XUMA1 |
![]() |
Hersteller: INFINEON TECHNOLOGIES
BGT24MTR12 Integrated circuits - others
BGT24MTR12 Integrated circuits - others
auf Bestellung 475 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 7+ | 11.23 EUR |
| BSC028N06NSATMA1 |
![]() |
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 100A; 83W; PG-TDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 100A
Power dissipation: 83W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 2.8mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 3
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 100A; 83W; PG-TDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 100A
Power dissipation: 83W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 2.8mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 3
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2024 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 29+ | 2.5 EUR |
| 41+ | 1.74 EUR |
| 50+ | 1.43 EUR |
| 100+ | 1.4 EUR |
| BSC030N04NSGATMA1 |
![]() |
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 83W; PG-TDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 100A
Power dissipation: 83W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 3mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 3
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 83W; PG-TDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 100A
Power dissipation: 83W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 3mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 3
Anzahl je Verpackung: 1 Stücke
auf Bestellung 3450 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 114+ | 0.63 EUR |
| 122+ | 0.59 EUR |
| 129+ | 0.56 EUR |
| 143+ | 0.5 EUR |
| 177+ | 0.41 EUR |
| 500+ | 0.32 EUR |
| 1000+ | 0.31 EUR |
| BSC030P03NS3GAUMA1 |
![]() |
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -100A; 125W; PG-TDSON-8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -100A
Power dissipation: 125W
Case: PG-TDSON-8
Gate-source voltage: ±25V
On-state resistance: 3mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ P3
Anzahl je Verpackung: 1 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -100A; 125W; PG-TDSON-8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -100A
Power dissipation: 125W
Case: PG-TDSON-8
Gate-source voltage: ±25V
On-state resistance: 3mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ P3
Anzahl je Verpackung: 1 Stücke
auf Bestellung 3134 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 34+ | 2.14 EUR |
| 37+ | 1.96 EUR |
| 40+ | 1.83 EUR |
| 44+ | 1.66 EUR |
| 51+ | 1.42 EUR |
| 100+ | 1.16 EUR |
| 250+ | 1.03 EUR |
| BSC032N04LSATMA1 |
![]() |
Hersteller: INFINEON TECHNOLOGIES
BSC032N04LSATMA1 SMD N channel transistors
BSC032N04LSATMA1 SMD N channel transistors
auf Bestellung 1144 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 44+ | 1.63 EUR |
| 72+ | 1 EUR |
| 74+ | 0.97 EUR |
| 77+ | 0.93 EUR |
| BSC035N10NS5ATMA1 |
![]() |
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 100A; 156W; PG-TDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 100A
Power dissipation: 156W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 3.5mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 5
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 100A; 156W; PG-TDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 100A
Power dissipation: 156W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 3.5mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 5
Anzahl je Verpackung: 1 Stücke
auf Bestellung 4141 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 38+ | 1.92 EUR |
| 5000+ | 1.26 EUR |
| BSC080N03MSGATMA1 |
![]() |
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 53A; 35W; PG-TDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 53A
Power dissipation: 35W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 8mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 3
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 53A; 35W; PG-TDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 53A
Power dissipation: 35W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 8mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 3
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1066 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 107+ | 0.67 EUR |
| 144+ | 0.5 EUR |
| 155+ | 0.46 EUR |
| 250+ | 0.44 EUR |
| 500+ | 0.4 EUR |
| BSC0902NSIATMA1 |
![]() |
Hersteller: INFINEON TECHNOLOGIES
BSC0902NSIATMA1 SMD N channel transistors
BSC0902NSIATMA1 SMD N channel transistors
auf Bestellung 4462 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 65+ | 1.1 EUR |
| 95+ | 0.76 EUR |
| 96+ | 0.75 EUR |
| 100+ | 0.72 EUR |
| BSC0906NSATMA1 |
![]() |
Hersteller: INFINEON TECHNOLOGIES
BSC0906NSATMA1 SMD N channel transistors
BSC0906NSATMA1 SMD N channel transistors
auf Bestellung 2399 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 81+ | 0.89 EUR |
| 173+ | 0.41 EUR |
| 183+ | 0.39 EUR |
| 500+ | 0.38 EUR |
| BSC0909NSATMA1 |
![]() |
Hersteller: INFINEON TECHNOLOGIES
BSC0909NSATMA1 SMD N channel transistors
BSC0909NSATMA1 SMD N channel transistors
auf Bestellung 88 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 69+ | 1.05 EUR |
| 88+ | 0.82 EUR |
| 147+ | 0.49 EUR |
| 2000+ | 0.29 EUR |
| BSC093N04LSGATMA1 |
![]() |
Hersteller: INFINEON TECHNOLOGIES
BSC093N04LSGATMA1 SMD N channel transistors
BSC093N04LSGATMA1 SMD N channel transistors
auf Bestellung 3195 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 76+ | 0.95 EUR |
| 127+ | 0.56 EUR |
| 135+ | 0.53 EUR |
| 140+ | 0.51 EUR |
| BSC100N06LS3GATMA1 |
![]() |
Hersteller: INFINEON TECHNOLOGIES
BSC100N06LS3GATMA1 SMD N channel transistors
BSC100N06LS3GATMA1 SMD N channel transistors
auf Bestellung 2049 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 42+ | 1.71 EUR |
| 167+ | 0.43 EUR |
| 177+ | 0.41 EUR |
| BSC123N08NS3GATMA1 |
![]() |
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 55A; 66W; PG-TDSON-8
Kind of channel: enhancement
Case: PG-TDSON-8
Polarisation: unipolar
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Mounting: SMD
On-state resistance: 12.3mΩ
Gate-source voltage: ±20V
Drain current: 55A
Power dissipation: 66W
Drain-source voltage: 80V
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 55A; 66W; PG-TDSON-8
Kind of channel: enhancement
Case: PG-TDSON-8
Polarisation: unipolar
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Mounting: SMD
On-state resistance: 12.3mΩ
Gate-source voltage: ±20V
Drain current: 55A
Power dissipation: 66W
Drain-source voltage: 80V
Anzahl je Verpackung: 1 Stücke
auf Bestellung 3152 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 81+ | 0.89 EUR |
| 98+ | 0.73 EUR |
| 106+ | 0.68 EUR |
| 112+ | 0.64 EUR |
| 119+ | 0.6 EUR |
| 250+ | 0.56 EUR |
| 500+ | 0.52 EUR |
| BSC190N15NS3GATMA1 |
![]() |
Hersteller: INFINEON TECHNOLOGIES
BSC190N15NS3GATMA1 SMD N channel transistors
BSC190N15NS3GATMA1 SMD N channel transistors
auf Bestellung 1446 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 33+ | 2.22 EUR |
| 35+ | 2.09 EUR |
| 36+ | 2.02 EUR |
| BSC340N08NS3GATMA1 |
![]() |
Hersteller: INFINEON TECHNOLOGIES
BSC340N08NS3GATMA1 SMD N channel transistors
BSC340N08NS3GATMA1 SMD N channel transistors
auf Bestellung 2738 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 92+ | 0.78 EUR |
| 214+ | 0.33 EUR |
| 227+ | 0.32 EUR |
| 5000+ | 0.31 EUR |
| BSD223PH6327XTSA1 |
![]() |
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -0.39A; 0.25W; PG-SOT-363
Case: PG-SOT-363
Mounting: SMD
Drain-source voltage: -20V
Drain current: -0.39A
On-state resistance: 1.2Ω
Polarisation: unipolar
Power dissipation: 0.25W
Technology: OptiMOS™ P
Type of transistor: P-MOSFET
Kind of channel: enhancement
Gate-source voltage: ±12V
Anzahl je Verpackung: 1 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -0.39A; 0.25W; PG-SOT-363
Case: PG-SOT-363
Mounting: SMD
Drain-source voltage: -20V
Drain current: -0.39A
On-state resistance: 1.2Ω
Polarisation: unipolar
Power dissipation: 0.25W
Technology: OptiMOS™ P
Type of transistor: P-MOSFET
Kind of channel: enhancement
Gate-source voltage: ±12V
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1819 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 209+ | 0.34 EUR |
| 296+ | 0.24 EUR |
| 428+ | 0.17 EUR |
| 506+ | 0.14 EUR |
| 603+ | 0.12 EUR |
| 695+ | 0.1 EUR |
| 1000+ | 0.099 EUR |
| BSD235CH6327XTSA1 |
![]() |
Hersteller: INFINEON TECHNOLOGIES
BSD235CH6327XTSA1 Multi channel transistors
BSD235CH6327XTSA1 Multi channel transistors
auf Bestellung 2523 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 141+ | 0.51 EUR |
| 725+ | 0.099 EUR |
| 770+ | 0.093 EUR |
| 6000+ | 0.092 EUR |
| BSD235NH6327XTSA1 |
![]() |
Hersteller: INFINEON TECHNOLOGIES
BSD235NH6327XTSA1 Multi channel transistors
BSD235NH6327XTSA1 Multi channel transistors
auf Bestellung 194 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 194+ | 0.37 EUR |
| 389+ | 0.19 EUR |
| 500+ | 0.14 EUR |
| BSD840NH6327XTSA1 |
![]() |
Hersteller: INFINEON TECHNOLOGIES
BSD840NH6327XTSA1 Multi channel transistors
BSD840NH6327XTSA1 Multi channel transistors
auf Bestellung 3806 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 166+ | 0.43 EUR |
| 794+ | 0.09 EUR |
| 834+ | 0.086 EUR |
| 6000+ | 0.084 EUR |
| BSL215CH6327XTSA1 |
![]() |
Hersteller: INFINEON TECHNOLOGIES
BSL215CH6327XTSA1 Multi channel transistors
BSL215CH6327XTSA1 Multi channel transistors
auf Bestellung 2117 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 81+ | 0.89 EUR |
| 202+ | 0.35 EUR |
| 213+ | 0.34 EUR |
| BSL307SPH6327XTSA1 |
![]() |
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -5.5A; 2W; PG-TSOP-6
Case: PG-TSOP-6
Mounting: SMD
Drain-source voltage: -30V
Drain current: -5.5A
On-state resistance: 43mΩ
Polarisation: unipolar
Power dissipation: 2W
Technology: OptiMOS™ P
Type of transistor: P-MOSFET
Kind of channel: enhancement
Gate-source voltage: ±20V
Anzahl je Verpackung: 1 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -5.5A; 2W; PG-TSOP-6
Case: PG-TSOP-6
Mounting: SMD
Drain-source voltage: -30V
Drain current: -5.5A
On-state resistance: 43mΩ
Polarisation: unipolar
Power dissipation: 2W
Technology: OptiMOS™ P
Type of transistor: P-MOSFET
Kind of channel: enhancement
Gate-source voltage: ±20V
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1005 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 105+ | 0.69 EUR |
| 144+ | 0.5 EUR |
| 197+ | 0.36 EUR |
| 250+ | 0.32 EUR |
| 500+ | 0.28 EUR |
| 1000+ | 0.25 EUR |
| 3000+ | 0.2 EUR |
| BSL308CH6327XTSA1 |
![]() |
Hersteller: INFINEON TECHNOLOGIES
BSL308CH6327XTSA1 Multi channel transistors
BSL308CH6327XTSA1 Multi channel transistors
auf Bestellung 1724 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 72+ | 1 EUR |
| 277+ | 0.26 EUR |
| 293+ | 0.24 EUR |
| BSL308PEH6327XTSA1 |
![]() |
Hersteller: INFINEON TECHNOLOGIES
BSL308PEH6327XTSA1 Multi channel transistors
BSL308PEH6327XTSA1 Multi channel transistors
auf Bestellung 1932 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 87+ | 0.83 EUR |
| 223+ | 0.32 EUR |
| 236+ | 0.3 EUR |
| 3000+ | 0.29 EUR |
| BSL316CH6327XTSA1 |
![]() |
Hersteller: INFINEON TECHNOLOGIES
BSL316CH6327XTSA1 Multi channel transistors
BSL316CH6327XTSA1 Multi channel transistors
auf Bestellung 1330 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 106+ | 0.68 EUR |
| 382+ | 0.19 EUR |
| 407+ | 0.18 EUR |
| 1000+ | 0.17 EUR |
| BSL606SNH6327XTSA1 |
![]() |
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 4.5A; 2W; PG-TSOP-6
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Case: PG-TSOP-6
Mounting: SMD
Polarisation: unipolar
On-state resistance: 95mΩ
Power dissipation: 2W
Gate-source voltage: ±20V
Drain-source voltage: 60V
Drain current: 4.5A
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 4.5A; 2W; PG-TSOP-6
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Case: PG-TSOP-6
Mounting: SMD
Polarisation: unipolar
On-state resistance: 95mΩ
Power dissipation: 2W
Gate-source voltage: ±20V
Drain-source voltage: 60V
Drain current: 4.5A
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 4585 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 109+ | 0.66 EUR |
| 149+ | 0.48 EUR |
| 195+ | 0.37 EUR |
| 219+ | 0.33 EUR |
| 500+ | 0.27 EUR |
| BSO110N03MSGXUMA1 |
![]() |
Hersteller: INFINEON TECHNOLOGIES
BSO110N03MSGXUMA1 SMD N channel transistors
BSO110N03MSGXUMA1 SMD N channel transistors
auf Bestellung 2488 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 78+ | 0.92 EUR |
| 162+ | 0.44 EUR |
| 172+ | 0.42 EUR |
| 2500+ | 0.41 EUR |
| BSO207PHXUMA1 |
![]() |
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -5A; 1.6W; PG-DSO-8
Case: PG-DSO-8
Mounting: SMD
Drain-source voltage: -20V
Drain current: -5A
On-state resistance: 45mΩ
Polarisation: unipolar
Power dissipation: 1.6W
Technology: OptiMOS™ P
Type of transistor: P-MOSFET
Kind of channel: enhancement
Gate-source voltage: ±12V
Anzahl je Verpackung: 1 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -5A; 1.6W; PG-DSO-8
Case: PG-DSO-8
Mounting: SMD
Drain-source voltage: -20V
Drain current: -5A
On-state resistance: 45mΩ
Polarisation: unipolar
Power dissipation: 1.6W
Technology: OptiMOS™ P
Type of transistor: P-MOSFET
Kind of channel: enhancement
Gate-source voltage: ±12V
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2211 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 193+ | 0.37 EUR |
| 207+ | 0.35 EUR |
| 219+ | 0.33 EUR |
| 222+ | 0.32 EUR |
| BSO211PHXUMA1 |
![]() |
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -4.6A; 1.6W; PG-DSO-8
Case: PG-DSO-8
Mounting: SMD
Drain-source voltage: -20V
Drain current: -4.6A
On-state resistance: 67mΩ
Polarisation: unipolar
Power dissipation: 1.6W
Technology: OptiMOS™ P
Type of transistor: P-MOSFET
Kind of channel: enhancement
Gate-source voltage: ±12V
Anzahl je Verpackung: 1 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -4.6A; 1.6W; PG-DSO-8
Case: PG-DSO-8
Mounting: SMD
Drain-source voltage: -20V
Drain current: -4.6A
On-state resistance: 67mΩ
Polarisation: unipolar
Power dissipation: 1.6W
Technology: OptiMOS™ P
Type of transistor: P-MOSFET
Kind of channel: enhancement
Gate-source voltage: ±12V
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2320 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 157+ | 0.46 EUR |
| 173+ | 0.41 EUR |
| 187+ | 0.38 EUR |
| 204+ | 0.35 EUR |
| BSP125H6327XTSA1 |
![]() |
Hersteller: INFINEON TECHNOLOGIES
BSP125H6327XTSA1 SMD N channel transistors
BSP125H6327XTSA1 SMD N channel transistors
auf Bestellung 961 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 62+ | 1.17 EUR |
| 153+ | 0.47 EUR |
| 162+ | 0.44 EUR |
| 500+ | 0.43 EUR |
| BSP129H6327XTSA1 |
![]() |
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 240V; 0.05A; 1.8W; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 240V
Drain current: 50mA
Power dissipation: 1.8W
Case: SOT223
On-state resistance: 6.5Ω
Mounting: SMD
Kind of channel: depletion
Technology: SIPMOS™
Gate-source voltage: ±20V
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 240V; 0.05A; 1.8W; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 240V
Drain current: 50mA
Power dissipation: 1.8W
Case: SOT223
On-state resistance: 6.5Ω
Mounting: SMD
Kind of channel: depletion
Technology: SIPMOS™
Gate-source voltage: ±20V
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1302 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 105+ | 0.69 EUR |
| 120+ | 0.6 EUR |
| 151+ | 0.47 EUR |
| 160+ | 0.45 EUR |
| BSP135H6327XTSA1 |
![]() |
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 0.12A; 1.8W; SOT223
Power dissipation: 1.8W
Gate-source voltage: ±20V
On-state resistance: 60Ω
Drain-source voltage: 600V
Polarisation: unipolar
Kind of channel: depletion
Type of transistor: N-MOSFET
Technology: SIPMOS™
Mounting: SMD
Case: SOT223
Drain current: 0.12A
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 0.12A; 1.8W; SOT223
Power dissipation: 1.8W
Gate-source voltage: ±20V
On-state resistance: 60Ω
Drain-source voltage: 600V
Polarisation: unipolar
Kind of channel: depletion
Type of transistor: N-MOSFET
Technology: SIPMOS™
Mounting: SMD
Case: SOT223
Drain current: 0.12A
Anzahl je Verpackung: 1 Stücke
auf Bestellung 490 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 56+ | 1.29 EUR |
| 77+ | 0.93 EUR |
| 92+ | 0.78 EUR |
| 100+ | 0.72 EUR |
| 200+ | 0.66 EUR |
| 250+ | 0.64 EUR |
| 500+ | 0.57 EUR |
| BSP149H6327XTSA1 |
![]() |
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 0.53A; Idm: 2.6A; 1.8W; SOT223
Type of transistor: N-MOSFET
Technology: SIPMOS™
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 0.53A
Pulsed drain current: 2.6A
Power dissipation: 1.8W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 3.5Ω
Mounting: SMD
Kind of channel: depletion
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 0.53A; Idm: 2.6A; 1.8W; SOT223
Type of transistor: N-MOSFET
Technology: SIPMOS™
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 0.53A
Pulsed drain current: 2.6A
Power dissipation: 1.8W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 3.5Ω
Mounting: SMD
Kind of channel: depletion
Anzahl je Verpackung: 1 Stücke
auf Bestellung 694 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 48+ | 1.52 EUR |
| 74+ | 0.97 EUR |
| 96+ | 0.75 EUR |
| 107+ | 0.67 EUR |
| 200+ | 0.6 EUR |
| 500+ | 0.58 EUR |
| BSP170PH6327XTSA1 |
![]() |
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -1.9A; 1.8W; PG-SOT223
Case: PG-SOT223
Type of transistor: P-MOSFET
Technology: SIPMOS™
Mounting: SMD
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -1.9A
On-state resistance: 0.3Ω
Power dissipation: 1.8W
Gate-source voltage: ±20V
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -1.9A; 1.8W; PG-SOT223
Case: PG-SOT223
Type of transistor: P-MOSFET
Technology: SIPMOS™
Mounting: SMD
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -1.9A
On-state resistance: 0.3Ω
Power dissipation: 1.8W
Gate-source voltage: ±20V
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1097 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 57+ | 1.27 EUR |
| 89+ | 0.81 EUR |
| 131+ | 0.55 EUR |
| 200+ | 0.48 EUR |
| 500+ | 0.4 EUR |
| 1000+ | 0.34 EUR |
| 2000+ | 0.3 EUR |
| BSP171PH6327XTSA1 |
![]() |
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -1.9A; 1.8W; PG-SOT223
Case: PG-SOT223
Type of transistor: P-MOSFET
Technology: SIPMOS™
Mounting: SMD
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -1.9A
On-state resistance: 0.3Ω
Power dissipation: 1.8W
Gate-source voltage: ±20V
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -1.9A; 1.8W; PG-SOT223
Case: PG-SOT223
Type of transistor: P-MOSFET
Technology: SIPMOS™
Mounting: SMD
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -1.9A
On-state resistance: 0.3Ω
Power dissipation: 1.8W
Gate-source voltage: ±20V
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2861 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 62+ | 1.16 EUR |
| 97+ | 0.74 EUR |
| 141+ | 0.51 EUR |
| 250+ | 0.42 EUR |
| 500+ | 0.35 EUR |
| 1000+ | 0.33 EUR |
| BSP295H6327XTSA1 |
![]() |
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 1.8A; 1.8W; SOT223
Mounting: SMD
Power dissipation: 1.8W
Drain current: 1.8A
Gate-source voltage: ±20V
Drain-source voltage: 60V
Polarisation: unipolar
Kind of channel: enhancement
Technology: SIPMOS™
Type of transistor: N-MOSFET
Case: SOT223
On-state resistance: 0.3Ω
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 1.8A; 1.8W; SOT223
Mounting: SMD
Power dissipation: 1.8W
Drain current: 1.8A
Gate-source voltage: ±20V
Drain-source voltage: 60V
Polarisation: unipolar
Kind of channel: enhancement
Technology: SIPMOS™
Type of transistor: N-MOSFET
Case: SOT223
On-state resistance: 0.3Ω
Anzahl je Verpackung: 1 Stücke
auf Bestellung 576 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 69+ | 1.04 EUR |
| 93+ | 0.77 EUR |
| 130+ | 0.55 EUR |
| 150+ | 0.48 EUR |
| 157+ | 0.46 EUR |
| 200+ | 0.42 EUR |
| 500+ | 0.37 EUR |
| BSP296NH6327XTSA1 |
![]() |
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 1.2A; 1.8W; SOT223
Mounting: SMD
Power dissipation: 1.8W
Drain current: 1.2A
Gate-source voltage: ±20V
Drain-source voltage: 100V
Polarisation: unipolar
Kind of channel: enhancement
Technology: OptiMOS™
Type of transistor: N-MOSFET
Case: SOT223
On-state resistance: 0.8Ω
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 1.2A; 1.8W; SOT223
Mounting: SMD
Power dissipation: 1.8W
Drain current: 1.2A
Gate-source voltage: ±20V
Drain-source voltage: 100V
Polarisation: unipolar
Kind of channel: enhancement
Technology: OptiMOS™
Type of transistor: N-MOSFET
Case: SOT223
On-state resistance: 0.8Ω
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1018 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 193+ | 0.37 EUR |
| 243+ | 0.29 EUR |
| 257+ | 0.28 EUR |
| 268+ | 0.27 EUR |
| 277+ | 0.26 EUR |
| BSP297H6327XTSA1 |
![]() |
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 0.66A; 1.8W; SOT223
Mounting: SMD
Power dissipation: 1.8W
Drain current: 0.66A
Gate-source voltage: ±20V
Drain-source voltage: 200V
Polarisation: unipolar
Kind of channel: enhancement
Technology: SIPMOS™
Type of transistor: N-MOSFET
Case: SOT223
On-state resistance: 1.8Ω
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 0.66A; 1.8W; SOT223
Mounting: SMD
Power dissipation: 1.8W
Drain current: 0.66A
Gate-source voltage: ±20V
Drain-source voltage: 200V
Polarisation: unipolar
Kind of channel: enhancement
Technology: SIPMOS™
Type of transistor: N-MOSFET
Case: SOT223
On-state resistance: 1.8Ω
Anzahl je Verpackung: 1 Stücke
auf Bestellung 641 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 74+ | 0.97 EUR |
| 96+ | 0.75 EUR |
| 109+ | 0.66 EUR |
| 121+ | 0.59 EUR |
| 136+ | 0.53 EUR |
| 200+ | 0.46 EUR |
| 500+ | 0.4 EUR |
| BSP315PH6327XTSA1 |
![]() |
Hersteller: INFINEON TECHNOLOGIES
BSP315PH6327XTSA1 SMD P channel transistors
BSP315PH6327XTSA1 SMD P channel transistors
auf Bestellung 1213 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 63+ | 1.14 EUR |
| 257+ | 0.28 EUR |
| 271+ | 0.26 EUR |
| BSP316PH6327XTSA1 |
![]() |
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -0.68A; 1.8W; PG-SOT223
Type of transistor: P-MOSFET
Mounting: SMD
Technology: SIPMOS™
Drain-source voltage: -100V
Drain current: -0.68A
Power dissipation: 1.8W
On-state resistance: 1.8Ω
Gate-source voltage: ±20V
Polarisation: unipolar
Case: PG-SOT223
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -0.68A; 1.8W; PG-SOT223
Type of transistor: P-MOSFET
Mounting: SMD
Technology: SIPMOS™
Drain-source voltage: -100V
Drain current: -0.68A
Power dissipation: 1.8W
On-state resistance: 1.8Ω
Gate-source voltage: ±20V
Polarisation: unipolar
Case: PG-SOT223
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 724 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 143+ | 0.5 EUR |
| 177+ | 0.41 EUR |
| 204+ | 0.35 EUR |
| 227+ | 0.32 EUR |
| 230+ | 0.31 EUR |
| BSP317PH6327XTSA1 |
![]() |
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -250V; -0.43A; 1.8W; PG-SOT223
Case: PG-SOT223
Mounting: SMD
Technology: SIPMOS™
Kind of channel: enhancement
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -250V
Drain current: -430mA
On-state resistance: 4Ω
Power dissipation: 1.8W
Gate-source voltage: ±20V
Anzahl je Verpackung: 1 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -250V; -0.43A; 1.8W; PG-SOT223
Case: PG-SOT223
Mounting: SMD
Technology: SIPMOS™
Kind of channel: enhancement
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -250V
Drain current: -430mA
On-state resistance: 4Ω
Power dissipation: 1.8W
Gate-source voltage: ±20V
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2417 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 64+ | 1.13 EUR |
| 95+ | 0.76 EUR |
| 140+ | 0.51 EUR |
| 250+ | 0.44 EUR |
| 500+ | 0.4 EUR |
| 1000+ | 0.36 EUR |
| 2000+ | 0.34 EUR |
| BSP322PH6327XTSA1 |
![]() |
Hersteller: INFINEON TECHNOLOGIES
BSP322PH6327XTSA1 SMD P channel transistors
BSP322PH6327XTSA1 SMD P channel transistors
auf Bestellung 782 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 63+ | 1.15 EUR |
| 152+ | 0.47 EUR |
| 161+ | 0.45 EUR |
| BSP324H6327XTSA1 |
![]() |
Hersteller: INFINEON TECHNOLOGIES
BSP324H6327XTSA1 SMD N channel transistors
BSP324H6327XTSA1 SMD N channel transistors
auf Bestellung 300 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 70+ | 1.03 EUR |
| 153+ | 0.47 EUR |
| 162+ | 0.44 EUR |
| 500+ | 0.43 EUR |
| BSP373NH6327XTSA1 |
![]() |
Hersteller: INFINEON TECHNOLOGIES
BSP373NH6327XTSA1 SMD N channel transistors
BSP373NH6327XTSA1 SMD N channel transistors
auf Bestellung 1708 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 63+ | 1.15 EUR |
| 139+ | 0.52 EUR |
| 147+ | 0.49 EUR |
| BSP452 |
![]() |
Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 0.7A; Ch: 1; N-Channel; SMD; SOT223-3
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 0.7A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: SOT223-3
On-state resistance: 0.16Ω
Technology: Classic PROFET
Output voltage: 40V
Anzahl je Verpackung: 1 Stücke
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 0.7A; Ch: 1; N-Channel; SMD; SOT223-3
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 0.7A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: SOT223-3
On-state resistance: 0.16Ω
Technology: Classic PROFET
Output voltage: 40V
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2229 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 19+ | 3.9 EUR |
| 28+ | 2.6 EUR |
| 100+ | 2.04 EUR |
| 250+ | 1.84 EUR |
| 500+ | 1.67 EUR |
| 1000+ | 1.54 EUR |
| BSP613PH6327XTSA1 |
![]() |
Hersteller: INFINEON TECHNOLOGIES
BSP613PH6327XTSA1 SMD P channel transistors
BSP613PH6327XTSA1 SMD P channel transistors
auf Bestellung 484 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 36+ | 2.03 EUR |
| 87+ | 0.83 EUR |
| 92+ | 0.78 EUR |
| BSP742R |
Hersteller: INFINEON TECHNOLOGIES
BSP742R Power switches - integrated circuits
BSP742R Power switches - integrated circuits
auf Bestellung 1732 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 21+ | 3.55 EUR |
| 54+ | 1.34 EUR |
| 57+ | 1.27 EUR |
| 2500+ | 1.26 EUR |
| BSP742T |
Hersteller: INFINEON TECHNOLOGIES
BSP742T Power switches - integrated circuits
BSP742T Power switches - integrated circuits
auf Bestellung 1517 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 22+ | 3.39 EUR |
| 50+ | 1.43 EUR |
| 53+ | 1.36 EUR |
| 1000+ | 1.34 EUR |








