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IHW20N120R5XKSA1 IHW20N120R5XKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB281E1EDD9BE52A653EB120D3&compId=IHW20N120R5.pdf?ci_sign=9078d3fe050273e18820feb3c35340de2d9578db Category: THT IGBT transistors
Description: Transistor: IGBT; TRENCHSTOP™ RC; 1.2kV; 20A; 144W; TO247-3
Type of transistor: IGBT
Technology: TRENCHSTOP™ RC
Collector-emitter voltage: 1.2kV
Collector current: 20A
Power dissipation: 144W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 60A
Mounting: THT
Gate charge: 170nC
Kind of package: tube
Turn-off time: 440ns
Features of semiconductor devices: reverse conducting IGBT (RC-IGBT)
Anzahl je Verpackung: 1 Stücke
auf Bestellung 13 Stücke:
Lieferzeit 7-14 Tag (e)
13+5.51 EUR
14+5.11 EUR
120+3.06 EUR
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IHW20N135R5XKSA1 IHW20N135R5XKSA1 INFINEON TECHNOLOGIES IHW20N135R5.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; TRENCHSTOP™ RC; 1.35kV; 20A; 144W; TO247-3
Type of transistor: IGBT
Technology: TRENCHSTOP™ RC
Collector-emitter voltage: 1.35kV
Collector current: 20A
Power dissipation: 144W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 60A
Mounting: THT
Gate charge: 170nC
Kind of package: tube
Turn-off time: 440ns
Features of semiconductor devices: reverse conducting IGBT (RC-IGBT)
Anzahl je Verpackung: 1 Stücke
auf Bestellung 19 Stücke:
Lieferzeit 7-14 Tag (e)
17+4.38 EUR
19+3.76 EUR
21+3.40 EUR
120+2.00 EUR
Mindestbestellmenge: 17
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IHW20N65R5XKSA1 IHW20N65R5XKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB82531ED99EDC6BCE91BE1820&compId=IHW20N65R5.pdf?ci_sign=b44b2ed99f625095237ebaf7c9ffdee8198ae140 Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 20A; 75W; TO247-3
Type of transistor: IGBT
Technology: TRENCHSTOP™ 5
Power dissipation: 75W
Case: TO247-3
Mounting: THT
Kind of package: tube
Features of semiconductor devices: reverse conducting IGBT (RC-IGBT)
Gate charge: 97nC
Gate-emitter voltage: ±20V
Collector-emitter voltage: 650V
Collector current: 20A
Pulsed collector current: 60A
Turn-off time: 257ns
Anzahl je Verpackung: 240 Stücke
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IHW25N120E1XKSA1 IHW25N120E1XKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB82531ED99EDC709B02919820&compId=IHW25N120E1.pdf?ci_sign=044805b42bcb3062c7f87ce990fa46fd76a11e9d Category: THT IGBT transistors
Description: Transistor: IGBT; TRENCHSTOP™ RC; 1.2kV; 25A; 92.4W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 25A
Power dissipation: 92.4W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 75A
Mounting: THT
Gate charge: 147nC
Kind of package: tube
Features of semiconductor devices: reverse conducting IGBT (RC-IGBT)
Technology: TRENCHSTOP™ RC
Turn-off time: 2004ns
Anzahl je Verpackung: 1 Stücke
auf Bestellung 204 Stücke:
Lieferzeit 7-14 Tag (e)
14+5.46 EUR
27+2.67 EUR
29+2.53 EUR
120+2.43 EUR
Mindestbestellmenge: 14
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IHW30N110R3FKSA1 INFINEON TECHNOLOGIES DS_IHW30N110R3_1_2.pdf?folderId=db3a3043156fd5730115f56849b61941&fileId=db3a304327b897500127b963455e0089 IHW30N110R3 THT IGBT transistors
auf Bestellung 3 Stücke:
Lieferzeit 7-14 Tag (e)
3+23.84 EUR
5+14.30 EUR
13+5.51 EUR
30+3.86 EUR
Mindestbestellmenge: 3
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IHW30N120R5XKSA1 IHW30N120R5XKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB82531ED99EDC84639C915820&compId=IHW30N120R5.pdf?ci_sign=89c6f0bb98f687ad7406821198f0deac2a7ce69f Category: THT IGBT transistors
Description: Transistor: IGBT; TRENCHSTOP™ RC; 1.2kV; 30A; 165W; TO247-3
Case: TO247-3
Mounting: THT
Power dissipation: 165W
Kind of package: tube
Features of semiconductor devices: reverse conducting IGBT (RC-IGBT)
Gate charge: 235nC
Technology: TRENCHSTOP™ RC
Collector-emitter voltage: 1.2kV
Gate-emitter voltage: ±20V
Collector current: 30A
Pulsed collector current: 90A
Turn-off time: 363ns
Type of transistor: IGBT
Anzahl je Verpackung: 1 Stücke
auf Bestellung 134 Stücke:
Lieferzeit 7-14 Tag (e)
18+4.20 EUR
23+3.13 EUR
25+2.96 EUR
60+2.92 EUR
120+2.85 EUR
Mindestbestellmenge: 18
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IHW30N135R5XKSA1 IHW30N135R5XKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB82531EE990FA3259EB0638BF&compId=IHW30N135R5.pdf?ci_sign=39630b0ae55cb15d14870d0c776223ecce32001c Category: THT IGBT transistors
Description: Transistor: IGBT; 1.35kV; 30A; 165W; TO247-3
Case: TO247-3
Mounting: THT
Power dissipation: 165W
Kind of package: tube
Features of semiconductor devices: reverse conducting IGBT (RC-IGBT)
Gate charge: 235nC
Technology: TRENCHSTOP™
Collector-emitter voltage: 1.35kV
Gate-emitter voltage: ±20V
Collector current: 30A
Pulsed collector current: 90A
Turn-off time: 680ns
Type of transistor: IGBT
Anzahl je Verpackung: 1 Stücke
auf Bestellung 20 Stücke:
Lieferzeit 7-14 Tag (e)
15+4.88 EUR
20+3.58 EUR
60+3.20 EUR
Mindestbestellmenge: 15
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IHW30N160R5XKSA1 IHW30N160R5XKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB82531EE990FA46CB7F2218BF&compId=IHW30N160R5.pdf?ci_sign=f142f1feb3d530f98974a0719171f909d530cf4d Category: THT IGBT transistors
Description: Transistor: IGBT; 1.6kV; 39A; 131.5W; TO247-3
Case: TO247-3
Mounting: THT
Power dissipation: 131.5W
Kind of package: tube
Features of semiconductor devices: reverse conducting IGBT (RC-IGBT)
Gate charge: 205nC
Technology: TRENCHSTOP™
Collector-emitter voltage: 1.6kV
Gate-emitter voltage: ±20V
Collector current: 39A
Pulsed collector current: 90A
Turn-off time: 411ns
Type of transistor: IGBT
Anzahl je Verpackung: 1 Stücke
auf Bestellung 5 Stücke:
Lieferzeit 7-14 Tag (e)
5+14.30 EUR
12+5.96 EUR
60+3.76 EUR
Mindestbestellmenge: 5
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IHW30N65R5XKSA1 INFINEON TECHNOLOGIES Infineon-IHW30N65R5-DS-v02_01-EN.pdf?fileId=5546d4624d6fc3d5014db954d0454713 IHW30N65R5 THT IGBT transistors
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IHW40N120R5XKSA1 IHW40N120R5XKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB82531ED99EDCA5EF2915F820&compId=IHW40N120R5.pdf?ci_sign=ff87a8c36a7c399a49fec60936b41c23e7a4c9aa Category: THT IGBT transistors
Description: Transistor: IGBT; TRENCHSTOP™ RC; 1.2kV; 40A; 197W; TO247-3
Type of transistor: IGBT
Power dissipation: 197W
Case: TO247-3
Mounting: THT
Gate charge: 310nC
Kind of package: tube
Technology: TRENCHSTOP™ RC
Collector-emitter voltage: 1.2kV
Gate-emitter voltage: ±20V
Collector current: 40A
Pulsed collector current: 120A
Turn-off time: 440ns
Features of semiconductor devices: reverse conducting IGBT (RC-IGBT)
Anzahl je Verpackung: 1 Stücke
auf Bestellung 34 Stücke:
Lieferzeit 7-14 Tag (e)
12+6.29 EUR
21+3.53 EUR
22+3.35 EUR
60+3.23 EUR
120+3.22 EUR
Mindestbestellmenge: 12
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IHW40N135R5XKSA1 IHW40N135R5XKSA1 INFINEON TECHNOLOGIES Infineon-IHW40N135R5-DS-v02_02-EN.pdf?fileId=5546d462636cc8fb0163b0fe63f5326a Category: THT IGBT transistors
Description: Transistor: IGBT; TRENCHSTOP™ RC; 1.35kV; 40A; 197W; TO247-3
Case: TO247-3
Mounting: THT
Power dissipation: 197W
Kind of package: tube
Features of semiconductor devices: reverse conducting IGBT (RC-IGBT)
Gate charge: 305nC
Technology: TRENCHSTOP™ RC
Collector-emitter voltage: 1.35kV
Gate-emitter voltage: ±20V
Collector current: 40A
Pulsed collector current: 120A
Turn-off time: 0.5µs
Type of transistor: IGBT
Anzahl je Verpackung: 1 Stücke
auf Bestellung 216 Stücke:
Lieferzeit 7-14 Tag (e)
11+6.82 EUR
20+3.76 EUR
21+3.55 EUR
120+3.42 EUR
Mindestbestellmenge: 11
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IHW40N60RFKSA1 IHW40N60RFKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB82531ED99EDCBDE92FDCF820&compId=IHW40N60RF.pdf?ci_sign=82767ed05928b8e96282a1f045c5bab220a23d94 Category: THT IGBT transistors
Description: Transistor: IGBT; TRENCHSTOP™ RC; 600V; 40A; 152W; TO247-3
Type of transistor: IGBT
Technology: TRENCHSTOP™ RC
Power dissipation: 152W
Case: TO247-3
Mounting: THT
Gate charge: 223nC
Kind of package: tube
Features of semiconductor devices: reverse conducting IGBT (RC-IGBT)
Collector current: 40A
Pulsed collector current: 120A
Turn-off time: 217ns
Gate-emitter voltage: ±20V
Collector-emitter voltage: 600V
Anzahl je Verpackung: 1 Stücke
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IHW40N65R5XKSA1 IHW40N65R5XKSA1 INFINEON TECHNOLOGIES IHW40N65R5.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 40A; 152W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 40A
Power dissipation: 152W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Mounting: THT
Gate charge: 193nC
Kind of package: tube
Turn-on time: 59ns
Turn-off time: 273ns
Features of semiconductor devices: reverse conducting IGBT (RC-IGBT)
Technology: TRENCHSTOP™ 5
Anzahl je Verpackung: 1 Stücke
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IHW40N65R6XKSA1 IHW40N65R6XKSA1 INFINEON TECHNOLOGIES Infineon-IHW40N65R6-DataSheet-v01_20-EN.pdf?fileId=5546d46277fc7439017826e19dad7275 Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 54A; 105W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 54A
Power dissipation: 105W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Mounting: THT
Gate charge: 159nC
Kind of package: tube
Turn-on time: 36ns
Turn-off time: 256ns
Features of semiconductor devices: reverse conducting IGBT (RC-IGBT)
Anzahl je Verpackung: 1 Stücke
auf Bestellung 201 Stücke:
Lieferzeit 7-14 Tag (e)
20+3.76 EUR
26+2.82 EUR
27+2.66 EUR
30+2.59 EUR
240+2.56 EUR
Mindestbestellmenge: 20
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IHW50N65R5XKSA1 IHW50N65R5XKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB82531ED99EDCFFAFB3183820&compId=IHW50N65R5.pdf?ci_sign=79609e9ed288e8af523721c936628f411dd72516 Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 50A; 141W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 50A
Power dissipation: 141W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 150A
Mounting: THT
Gate charge: 230nC
Kind of package: tube
Features of semiconductor devices: reverse conducting IGBT (RC-IGBT)
Technology: TRENCHSTOP™ 5
Turn-on time: 50ns
Turn-off time: 218ns
Anzahl je Verpackung: 1 Stücke
auf Bestellung 198 Stücke:
Lieferzeit 7-14 Tag (e)
12+6.06 EUR
14+5.35 EUR
16+4.65 EUR
17+4.39 EUR
Mindestbestellmenge: 12
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IKA06N60TXKSA1 INFINEON TECHNOLOGIES IKA06N60T+Rev2_3G.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a304412b407950112b42868603dee IKA06N60T THT IGBT transistors
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IKA10N60TXKSA1 IKA10N60TXKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB82531ED99EDD0C97D3F67820&compId=IKA10N60T.pdf?ci_sign=fadea912e4a2c8f589f65f7cdedf1af4db1bc744 Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 7.2A; 30W; TO220-3
Type of transistor: IGBT
Power dissipation: 30W
Case: TO220-3
Mounting: THT
Gate charge: 67nC
Kind of package: tube
Collector-emitter voltage: 600V
Gate-emitter voltage: ±20V
Collector current: 7.2A
Pulsed collector current: 30A
Turn-on time: 20ns
Turn-off time: 250ns
Features of semiconductor devices: integrated anti-parallel diode
Technology: TRENCHSTOP™
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
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IKA10N65ET6XKSA2 IKA10N65ET6XKSA2 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE895EFAAFFDA7933D6&compId=IKA10N65ET6.pdf?ci_sign=357318a9289c8383d9971a53bdf9a9a379462c13 Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 9A; 20W; TO220FP; T6
Type of transistor: IGBT
Power dissipation: 20W
Case: TO220FP
Mounting: THT
Gate charge: 27nC
Kind of package: tube
Collector-emitter voltage: 650V
Gate-emitter voltage: ±20V
Collector current: 9A
Pulsed collector current: 42.5A
Features of semiconductor devices: integrated anti-parallel diode
Manufacturer series: T6
Technology: TRENCHSTOP™ 6
Anzahl je Verpackung: 1 Stücke
auf Bestellung 103 Stücke:
Lieferzeit 7-14 Tag (e)
38+1.93 EUR
41+1.77 EUR
49+1.47 EUR
52+1.39 EUR
500+1.34 EUR
Mindestbestellmenge: 38
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IKA15N60TXKSA1 IKA15N60TXKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB82531ED99EDD1E877C847820&compId=IKA15N60T.pdf?ci_sign=ce907b1e3bd538123e3a5020ae0c7b1b51be7942 Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 10.6A; 35.7W; TO220-3
Type of transistor: IGBT
Technology: TRENCHSTOP™
Power dissipation: 35.7W
Case: TO220-3
Mounting: THT
Gate charge: 87nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Collector-emitter voltage: 600V
Gate-emitter voltage: ±20V
Collector current: 10.6A
Pulsed collector current: 45A
Turn-on time: 28ns
Turn-off time: 238ns
Anzahl je Verpackung: 1 Stücke
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IKA15N65ET6XKSA2 IKA15N65ET6XKSA2 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB281E1EDE92E3A7A2ABEFC0D5&compId=IKA15N65ET6.pdf?ci_sign=a5d0997715c8dfdacffa9de02f1033ffc16b814e Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 11A; 22W; TO220FP; T6
Type of transistor: IGBT
Technology: TRENCHSTOP™ 6
Case: TO220FP
Mounting: THT
Kind of package: tube
Power dissipation: 22W
Features of semiconductor devices: integrated anti-parallel diode
Gate charge: 37nC
Manufacturer series: T6
Collector-emitter voltage: 650V
Gate-emitter voltage: ±20V
Collector current: 11A
Pulsed collector current: 57.5A
Turn-on time: 50ns
Turn-off time: 202ns
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1 Stücke:
Lieferzeit 7-14 Tag (e)
1+71.50 EUR
10+7.15 EUR
11+6.51 EUR
29+2.46 EUR
250+1.49 EUR
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IKB06N60TATMA1 INFINEON TECHNOLOGIES IKB06N60T+Rev2_3G.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a304412b407950112b4286b603df2 IKB06N60TATMA1 SMD IGBT transistors
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IKB10N60TATMA1 IKB10N60TATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB82531ED99EDD3C93FDBDF820&compId=IKB10N60T.pdf?ci_sign=ac3f6735529e5b82d20ec8c5b3cf138128615c0e Category: SMD IGBT transistors
Description: Transistor: IGBT; 600V; 18A; 110W; D2PAK
Type of transistor: IGBT
Power dissipation: 110W
Case: D2PAK
Mounting: SMD
Gate charge: 62nC
Kind of package: reel; tape
Collector-emitter voltage: 600V
Gate-emitter voltage: ±20V
Collector current: 18A
Pulsed collector current: 30A
Turn-on time: 20ns
Turn-off time: 253ns
Features of semiconductor devices: integrated anti-parallel diode
Technology: TRENCHSTOP™
Anzahl je Verpackung: 1 Stücke
auf Bestellung 663 Stücke:
Lieferzeit 7-14 Tag (e)
24+3.09 EUR
36+2.03 EUR
44+1.64 EUR
46+1.56 EUR
100+1.50 EUR
Mindestbestellmenge: 24
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IKB15N60TATMA1 IKB15N60TATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB82531ED99EDD41F72CB29820&compId=IKB15N60T.pdf?ci_sign=9b743b6df9c5530ebc7f8eee8c1770ec9a429f91 Category: SMD IGBT transistors
Description: Transistor: IGBT; 600V; 23A; 130W; D2PAK
Collector-emitter voltage: 600V
Gate-emitter voltage: ±20V
Collector current: 23A
Pulsed collector current: 45A
Turn-on time: 28ns
Turn-off time: 238ns
Type of transistor: IGBT
Power dissipation: 130W
Kind of package: reel; tape
Features of semiconductor devices: integrated anti-parallel diode
Gate charge: 87nC
Technology: TRENCHSTOP™
Mounting: SMD
Case: D2PAK
Anzahl je Verpackung: 1 Stücke
auf Bestellung 832 Stücke:
Lieferzeit 7-14 Tag (e)
20+3.66 EUR
22+3.29 EUR
28+2.60 EUR
30+2.46 EUR
Mindestbestellmenge: 20
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IKB15N65EH5ATMA1 IKB15N65EH5ATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB82531ED99EDD4741CB2AD820&compId=IKB15N65EH5.pdf?ci_sign=f41aca0c31e21ad8910ab653a5cd8be8dccade59 Category: SMD IGBT transistors
Description: Transistor: IGBT; 650V; 18A; 52.5W; D2PAK
Type of transistor: IGBT
Technology: TRENCHSTOP™ 5
Case: D2PAK
Mounting: SMD
Kind of package: reel; tape
Power dissipation: 52.5W
Features of semiconductor devices: integrated anti-parallel diode
Gate charge: 38nC
Collector-emitter voltage: 650V
Gate-emitter voltage: ±20V
Collector current: 18A
Pulsed collector current: 45A
Turn-on time: 33ns
Turn-off time: 172ns
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
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IKB20N60H3ATMA1 IKB20N60H3ATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB82531ED99EDD4BEE48ED3820&compId=IKB20N60H3.pdf?ci_sign=6e59697a1b11c9314964694537e7c76c6542e9f8 Category: SMD IGBT transistors
Description: Transistor: IGBT; 600V; 20A; 85W; D2PAK
Type of transistor: IGBT
Technology: TRENCHSTOP™
Power dissipation: 85W
Case: D2PAK
Mounting: SMD
Kind of package: reel; tape
Gate charge: 0.12µC
Collector-emitter voltage: 600V
Gate-emitter voltage: ±20V
Collector current: 20A
Pulsed collector current: 80A
Turn-on time: 36ns
Turn-off time: 205ns
Features of semiconductor devices: integrated anti-parallel diode
Anzahl je Verpackung: 1 Stücke
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IKB20N60TATMA1 IKB20N60TATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB82531ED99EDD52D9F6417820&compId=IKB20N60T.pdf?ci_sign=c235205cf7eddca1fd52b37a7c3b186c20f8ddcc Category: SMD IGBT transistors
Description: Transistor: IGBT; 600V; 28A; 166W; D2PAK
Type of transistor: IGBT
Technology: TRENCHSTOP™
Power dissipation: 166W
Case: D2PAK
Mounting: SMD
Kind of package: reel; tape
Gate charge: 0.12µC
Collector-emitter voltage: 600V
Gate-emitter voltage: ±20V
Collector current: 28A
Pulsed collector current: 60A
Turn-on time: 32ns
Turn-off time: 241ns
Features of semiconductor devices: integrated anti-parallel diode
Anzahl je Verpackung: 1 Stücke
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IKB20N65EH5ATMA1 IKB20N65EH5ATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB82531ED99EDD5B574119B820&compId=IKB20N65EH5.pdf?ci_sign=84117916d2af3cf46356ecf8de4185ed193d681c Category: SMD IGBT transistors
Description: Transistor: IGBT; 650V; 25A; 62.5W; D2PAK
Type of transistor: IGBT
Technology: TRENCHSTOP™ 5
Power dissipation: 62.5W
Case: D2PAK
Mounting: SMD
Kind of package: reel; tape
Features of semiconductor devices: integrated anti-parallel diode
Gate charge: 48nC
Gate-emitter voltage: ±20V
Collector-emitter voltage: 650V
Collector current: 25A
Pulsed collector current: 60A
Turn-on time: 40ns
Turn-off time: 183ns
Anzahl je Verpackung: 1 Stücke
auf Bestellung 919 Stücke:
Lieferzeit 7-14 Tag (e)
15+4.80 EUR
25+2.92 EUR
26+2.76 EUR
100+2.66 EUR
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IKB30N65EH5ATMA1 INFINEON TECHNOLOGIES Infineon-IKB30N65EH5-DS-v02_01-EN.pdf?fileId=5546d46262b31d2e0162cd134705491a IKB30N65EH5ATMA1 SMD IGBT transistors
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IKB30N65ES5ATMA1 INFINEON TECHNOLOGIES Infineon-IKB30N65ES5-DS-v02_01-EN.pdf?fileId=5546d46262b31d2e0162cd135b40491d IKB30N65ES5ATMA1 SMD IGBT transistors
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IKB40N65EF5ATMA1 IKB40N65EF5ATMA1 INFINEON TECHNOLOGIES IKB40N65EF5.pdf Category: SMD IGBT transistors
Description: Transistor: IGBT; 650V; 46A; 125W; D2PAK
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 46A
Power dissipation: 125W
Case: D2PAK
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Mounting: SMD
Gate charge: 95nC
Kind of package: reel; tape
Turn-on time: 56ns
Turn-off time: 212ns
Features of semiconductor devices: integrated anti-parallel diode
Technology: TRENCHSTOP™ 5
Anzahl je Verpackung: 1 Stücke
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IKB40N65EH5ATMA1 IKB40N65EH5ATMA1 INFINEON TECHNOLOGIES IKB40N65EH5.pdf Category: SMD IGBT transistors
Description: Transistor: IGBT; 650V; 46A; 125W; D2PAK
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 46A
Power dissipation: 125W
Case: D2PAK
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Mounting: SMD
Gate charge: 95nC
Kind of package: reel; tape
Turn-on time: 34ns
Turn-off time: 178ns
Features of semiconductor devices: integrated anti-parallel diode
Technology: TRENCHSTOP™ 5
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
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IKB40N65ES5ATMA1 IKB40N65ES5ATMA1 INFINEON TECHNOLOGIES IKB40N65ES5.pdf Category: SMD IGBT transistors
Description: Transistor: IGBT; 650V; 50A; 115W; D2PAK
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 50A
Power dissipation: 115W
Case: D2PAK
Gate-emitter voltage: ±20V
Pulsed collector current: 160A
Mounting: SMD
Gate charge: 95nC
Kind of package: reel; tape
Turn-on time: 37ns
Turn-off time: 153ns
Features of semiconductor devices: integrated anti-parallel diode
Technology: TRENCHSTOP™ 5
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
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IKCM10H60GAXKMA1 IKCM10H60GAXKMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE89BACDC852B5593D7&compId=IKCM10H60GA.pdf?ci_sign=4b5a98fd60881639d3b88e907a50e2961c030923 Category: Motor and PWM drivers
Description: IC: driver; IGBT three-phase bridge,thermistor; PG-MDIP24; 20kHz
Type of integrated circuit: driver
Topology: IGBT three-phase bridge; thermistor
Kind of integrated circuit: 3-phase motor controller; IPM
Technology: ClPOS™ Mini; TRENCHSTOP™
Case: PG-MDIP24
Output current: -10...10A
Mounting: THT
Operating temperature: -40...125°C
Operating voltage: 13.5...18.5/0...400V DC
Frequency: 20kHz
Power dissipation: 23.1W
Integrated circuit features: integrated bootstrap functionality
Voltage class: 600V
Anzahl je Verpackung: 1 Stücke
auf Bestellung 25 Stücke:
Lieferzeit 7-14 Tag (e)
6+12.37 EUR
8+8.97 EUR
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IKCM10L60GAXKMA1 IKCM10L60GAXKMA1 INFINEON TECHNOLOGIES IKCM10L60GA.pdf Category: Motor and PWM drivers
Description: IC: driver; IGBT three-phase bridge,thermistor; PG-MDIP24; 20kHz
Type of integrated circuit: driver
Topology: IGBT three-phase bridge; thermistor
Kind of integrated circuit: 3-phase motor controller; IPM
Technology: ClPOS™ Mini; TRENCHSTOP™
Case: PG-MDIP24
Output current: -10...10A
Integrated circuit features: integrated bootstrap functionality
Mounting: THT
Operating temperature: -40...125°C
Operating voltage: 13.5...18.5/0...400V DC
Frequency: 20kHz
Voltage class: 600V
Power dissipation: 25.2W
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
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IKCM15H60GAXKMA2 IKCM15H60GAXKMA2 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE89BACE685ADE5B3D7&compId=IKCM15H60GA.pdf?ci_sign=b05a44ba28f3534652439353305f4e3dde92d0c0 Category: Motor and PWM drivers
Description: IC: driver; IGBT three-phase bridge,thermistor; PG-MDIP24; 20kHz
Type of integrated circuit: driver
Topology: IGBT three-phase bridge; thermistor
Kind of integrated circuit: 3-phase motor controller; IPM
Technology: ClPOS™ Mini; TRENCHSTOP™
Case: PG-MDIP24
Output current: -15...15A
Integrated circuit features: integrated bootstrap functionality
Mounting: THT
Operating temperature: -40...125°C
Operating voltage: 13.5...18.5/0...400V DC
Frequency: 20kHz
Voltage class: 600V
Power dissipation: 25.2W
Anzahl je Verpackung: 1 Stücke
auf Bestellung 17 Stücke:
Lieferzeit 7-14 Tag (e)
6+14.26 EUR
7+10.22 EUR
Mindestbestellmenge: 6
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IKCM15L60GDXKMA1 IKCM15L60GDXKMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE89BACEA79D16AF3D7&compId=IKCM15L60GD.pdf?ci_sign=398345fa98c1b63f7ad382e4628995eafd40f542 Category: Motor and PWM drivers
Description: IC: driver; IGBT three-phase bridge,thermistor; PG-MDIP24; 20kHz
Type of integrated circuit: driver
Topology: IGBT three-phase bridge; thermistor
Kind of integrated circuit: 3-phase motor controller; IPM
Technology: ClPOS™ Mini; TRENCHSTOP™
Case: PG-MDIP24
Output current: -15...15A
Integrated circuit features: integrated bootstrap functionality
Mounting: THT
Operating temperature: -40...125°C
Operating voltage: 13.5...18.5/0...400V DC
Frequency: 20kHz
Voltage class: 600V
Power dissipation: 58.6W
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
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IKCM20L60GAXKMA1 IKCM20L60GAXKMA1 INFINEON TECHNOLOGIES IKCM20L60GA.pdf Category: Motor and PWM drivers
Description: IC: driver; IGBT three-phase bridge,thermistor; PG-MDIP24; 20kHz
Type of integrated circuit: driver
Topology: IGBT three-phase bridge; thermistor
Kind of integrated circuit: 3-phase motor controller; IPM
Technology: ClPOS™ Mini; TRENCHSTOP™
Case: PG-MDIP24
Output current: -20...20A
Integrated circuit features: integrated bootstrap functionality
Mounting: THT
Operating temperature: -40...125°C
Operating voltage: 13.5...18.5/0...400V DC
Frequency: 20kHz
Voltage class: 600V
Power dissipation: 29.2W
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
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IKCM30F60GAXKMA1 IKCM30F60GAXKMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED6BCD5B09CEE67DE28&compId=IKCM30F60GA.pdf?ci_sign=783f1af8ac5ce8035a854959701563b15dac9467 Category: Motor and PWM drivers
Description: IC: driver; IGBT three-phase bridge,thermistor; PG-MDIP24; 20kHz
Type of integrated circuit: driver
Topology: IGBT three-phase bridge; thermistor
Kind of integrated circuit: 3-phase motor controller; IPM
Technology: ClPOS™ Mini; TRENCHSTOP™
Case: PG-MDIP24
Output current: -20...20A
Mounting: THT
Operating temperature: -40...125°C
Operating voltage: 13.5...18.5/0...400V DC
Frequency: 20kHz
Power dissipation: 30.3W
Integrated circuit features: integrated bootstrap functionality
Protection: anti-overload OPP; undervoltage UVP
Voltage class: 600V
Anzahl je Verpackung: 1 Stücke
auf Bestellung 13 Stücke:
Lieferzeit 7-14 Tag (e)
3+24.42 EUR
Mindestbestellmenge: 3
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IKD03N60RFATMA1 IKD03N60RFATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB82531ED99EDD8E80508A9820&compId=IKD03N60RF.pdf?ci_sign=68d6aad35e656a07d48ac99a74b3916ffc4e27e4 Category: SMD IGBT transistors
Description: Transistor: IGBT; TRENCHSTOP™ RC; 600V; 6A; 53.6W; DPAK
Type of transistor: IGBT
Technology: TRENCHSTOP™ RC
Power dissipation: 53.6W
Case: DPAK
Mounting: SMD
Gate charge: 17.1nC
Kind of package: reel; tape
Collector-emitter voltage: 600V
Features of semiconductor devices: integrated anti-parallel diode
Collector current: 6A
Pulsed collector current: 7.5A
Turn-on time: 17ns
Turn-off time: 265ns
Gate-emitter voltage: ±20V
Anzahl je Verpackung: 1 Stücke
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IKD04N60RATMA1 IKD04N60RATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB82531ED99EDDA3E2ACF23820&compId=IKD04N60R.pdf?ci_sign=6efd6340cc350b45c24c45eb5a27009029527dee Category: SMD IGBT transistors
Description: Transistor: IGBT; TRENCHSTOP™ RC; 600V; 4A; 75W; DPAK
Type of transistor: IGBT
Power dissipation: 75W
Case: DPAK
Mounting: SMD
Gate charge: 27nC
Kind of package: reel; tape
Collector-emitter voltage: 600V
Features of semiconductor devices: integrated anti-parallel diode
Technology: TRENCHSTOP™ RC
Collector current: 4A
Pulsed collector current: 12A
Turn-on time: 22ns
Turn-off time: 317ns
Gate-emitter voltage: ±20V
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2479 Stücke:
Lieferzeit 7-14 Tag (e)
41+1.74 EUR
65+1.10 EUR
121+0.59 EUR
128+0.56 EUR
1000+0.54 EUR
Mindestbestellmenge: 41
Im Einkaufswagen  Stück im Wert von  UAH
IKD04N60RFATMA1 IKD04N60RFATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED783FA69A7DB8B0259&compId=IKD04N60RF.pdf?ci_sign=a5c7bbdc7a42672854858807ced6a63c83269dd0 Category: SMD IGBT transistors
Description: Transistor: IGBT; 600V; 4A; 75W; DPAK
Type of transistor: IGBT
Power dissipation: 75W
Case: DPAK
Mounting: SMD
Gate charge: 27nC
Kind of package: reel; tape
Collector-emitter voltage: 600V
Features of semiconductor devices: integrated anti-parallel diode
Technology: TRENCHSTOP™
Collector current: 4A
Pulsed collector current: 12A
Gate-emitter voltage: ±20V
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
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IKD06N60RATMA1 IKD06N60RATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB82531ED99EDDD3F1CDA1D820&compId=IKD06N60R.pdf?ci_sign=c4b8048f27233912a33abdef90e7ecad642b9369 Category: SMD IGBT transistors
Description: Transistor: IGBT; TRENCHSTOP™ RC; 600V; 6A; 100W; DPAK
Type of transistor: IGBT
Technology: TRENCHSTOP™ RC
Power dissipation: 100W
Case: DPAK
Mounting: SMD
Gate charge: 48nC
Kind of package: reel; tape
Gate-emitter voltage: ±20V
Features of semiconductor devices: integrated anti-parallel diode
Turn-off time: 279ns
Turn-on time: 19ns
Pulsed collector current: 18A
Collector-emitter voltage: 600V
Collector current: 6A
Anzahl je Verpackung: 1 Stücke
auf Bestellung 833 Stücke:
Lieferzeit 7-14 Tag (e)
37+1.94 EUR
59+1.23 EUR
93+0.77 EUR
99+0.73 EUR
500+0.70 EUR
Mindestbestellmenge: 37
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IKD06N60RFATMA1 INFINEON TECHNOLOGIES Infineon-EiceDRIVER_Gate_Driver_ICs-ProductSelectionGuide-v02_00-EN.pdf?fileId=8ac78c8c80027ecd018094fa56806ee1&redirId=195507 IKD06N60RFATMA1 SMD IGBT transistors
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IKD10N60RATMA1 IKD10N60RATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB82531ED99EDDE350DCA63820&compId=IKD10N60R.pdf?ci_sign=ecb612de43b087b36cf1e0a347077a0e414f088b Category: SMD IGBT transistors
Description: Transistor: IGBT; TRENCHSTOP™ RC; 600V; 10A; 150W; DPAK
Type of transistor: IGBT
Power dissipation: 150W
Case: DPAK
Mounting: SMD
Gate charge: 64nC
Kind of package: reel; tape
Features of semiconductor devices: integrated anti-parallel diode
Technology: TRENCHSTOP™ RC
Gate-emitter voltage: ±20V
Collector current: 10A
Pulsed collector current: 30A
Turn-on time: 24ns
Turn-off time: 331ns
Collector-emitter voltage: 600V
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IKD10N60RFATMA1 IKD10N60RFATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB82531ED99EDDE9EBA7B4D820&compId=IKD10N60RF.pdf?ci_sign=ff07afe3ccf9dab31c2c7d5cd2c6e1307060f858 Category: SMD IGBT transistors
Description: Transistor: IGBT; TRENCHSTOP™ RC; 600V; 10A; 150W; DPAK
Type of transistor: IGBT
Power dissipation: 150W
Case: DPAK
Mounting: SMD
Gate charge: 64nC
Kind of package: reel; tape
Features of semiconductor devices: integrated anti-parallel diode
Technology: TRENCHSTOP™ RC
Gate-emitter voltage: ±20V
Collector current: 10A
Pulsed collector current: 30A
Turn-on time: 27ns
Turn-off time: 186ns
Collector-emitter voltage: 600V
Anzahl je Verpackung: 2500 Stücke
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IKD15N60RATMA1 IKD15N60RATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB82531ED99EDDF1E34C9ED820&compId=IKD15N60R.pdf?ci_sign=edf8c9498bddcc0bab7c28dab797b14b4d8a5a23 Category: SMD IGBT transistors
Description: Transistor: IGBT; TRENCHSTOP™ RC; 600V; 15A; 250W; DPAK
Type of transistor: IGBT
Technology: TRENCHSTOP™ RC
Power dissipation: 250W
Case: DPAK
Mounting: SMD
Gate charge: 90nC
Kind of package: reel; tape
Features of semiconductor devices: integrated anti-parallel diode
Collector-emitter voltage: 600V
Gate-emitter voltage: ±20V
Collector current: 15A
Pulsed collector current: 45A
Turn-on time: 26ns
Turn-off time: 319ns
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1976 Stücke:
Lieferzeit 7-14 Tag (e)
25+2.87 EUR
39+1.87 EUR
47+1.54 EUR
50+1.46 EUR
100+1.40 EUR
Mindestbestellmenge: 25
Im Einkaufswagen  Stück im Wert von  UAH
IKD15N60RFATMA1 IKD15N60RFATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB82531ED99EDDF85E72955820&compId=IKD15N60RF.pdf?ci_sign=9b3a2a6a184bf30583c6686dacdbdd53ba4602b7 Category: SMD IGBT transistors
Description: Transistor: IGBT; TRENCHSTOP™ RC; 600V; 15A; 250W; DPAK
Type of transistor: IGBT
Technology: TRENCHSTOP™ RC
Power dissipation: 250W
Case: DPAK
Mounting: SMD
Gate charge: 90nC
Kind of package: reel; tape
Features of semiconductor devices: integrated anti-parallel diode
Collector-emitter voltage: 600V
Gate-emitter voltage: ±20V
Collector current: 15A
Pulsed collector current: 45A
Turn-on time: 28ns
Turn-off time: 177ns
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
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IKFW40N60DH3EXKSA1 IKFW40N60DH3EXKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE889B9AAD001B273D1&compId=IKFW40N60DH3E.pdf?ci_sign=d3d3fa4018878730715399a693c9252b7a658397 Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 28A; 81W; PG-TO247-3-AI
Type of transistor: IGBT
Technology: TRENCHSTOP™
Power dissipation: 81W
Case: PG-TO247-3-AI
Mounting: THT
Gate charge: 107nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Collector current: 28A
Pulsed collector current: 90A
Turn-on time: 52ns
Turn-off time: 160ns
Gate-emitter voltage: ±20V
Collector-emitter voltage: 600V
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
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IKFW50N60DH3EXKSA1 IKFW50N60DH3EXKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE889B9E65EA81B13D1&compId=IKFW50N60DH3E.pdf?ci_sign=9aec02af7ba15dd5f0fcbd322c4880e0cd8ecdd5 Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 37A; 95W; PG-TO247-3-AI
Type of transistor: IGBT
Technology: TRENCHSTOP™
Power dissipation: 95W
Case: PG-TO247-3-AI
Mounting: THT
Gate charge: 160nC
Kind of package: tube
Turn-off time: 192ns
Features of semiconductor devices: integrated anti-parallel diode
Collector-emitter voltage: 600V
Gate-emitter voltage: ±20V
Collector current: 37A
Pulsed collector current: 120A
Turn-on time: 60ns
Anzahl je Verpackung: 1 Stücke
auf Bestellung 6 Stücke:
Lieferzeit 7-14 Tag (e)
6+11.91 EUR
9+7.95 EUR
480+4.89 EUR
Mindestbestellmenge: 6
Im Einkaufswagen  Stück im Wert von  UAH
IKFW50N60ETXKSA1 IKFW50N60ETXKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB82531ED99EDE1A560ED2F820&compId=IKFW50N60ET.pdf?ci_sign=1dc63477d7ea1d12e4dda3141dab1803566a6fe8 Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 59A; 120W; PG-TO247-3-AI
Type of transistor: IGBT
Technology: TRENCHSTOP™
Power dissipation: 120W
Case: PG-TO247-3-AI
Mounting: THT
Gate charge: 290nC
Kind of package: tube
Turn-off time: 332ns
Features of semiconductor devices: integrated anti-parallel diode
Collector-emitter voltage: 600V
Gate-emitter voltage: ±20V
Collector current: 59A
Pulsed collector current: 150A
Turn-on time: 61ns
Anzahl je Verpackung: 240 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IKFW60N60DH3EXKSA1 IKFW60N60DH3EXKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE889B9F00A97F393D1&compId=IKFW60N60DH3E.pdf?ci_sign=66fa90d9f11cedce9cdc0e769fa76651b50686b7 Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 44A; 104W; PG-TO247-3-AI
Type of transistor: IGBT
Technology: TRENCHSTOP™
Power dissipation: 104W
Case: PG-TO247-3-AI
Mounting: THT
Gate charge: 0.21µC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Collector current: 44A
Pulsed collector current: 150A
Turn-on time: 62ns
Turn-off time: 189ns
Gate-emitter voltage: ±20V
Collector-emitter voltage: 600V
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IKFW60N60EH3XKSA1 INFINEON TECHNOLOGIES Infineon-IKFW60N60EH3-DS-v02_01-EN.pdf?fileId=5546d46262b31d2e0163016e787232af Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 50A; 164W; TO247-3
Type of transistor: IGBT
Technology: TRENCHSTOP™
Power dissipation: 164W
Case: TO247-3
Mounting: THT
Gate charge: 290nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Collector current: 50A
Pulsed collector current: 200A
Turn-on time: 64ns
Turn-off time: 253ns
Gate-emitter voltage: ±20V
Collector-emitter voltage: 600V
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
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IKFW90N60EH3XKSA1 INFINEON TECHNOLOGIES Infineon-IKFW90N60EH3-DS-v02_01-EN.pdf?fileId=5546d46262b31d2e0163016e976f32b5 IKFW90N60EH3XKSA1 THT IGBT transistors
Produkt ist nicht verfügbar
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IKP04N60TXKSA1 IKP04N60TXKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB82531ED99EDE22916DB05820&compId=IKP04N60T.pdf?ci_sign=79887e35e97dee3f47a5ed0ea9755ace78373099 Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 4A; 42W; TO220-3
Type of transistor: IGBT
Power dissipation: 42W
Case: TO220-3
Mounting: THT
Gate charge: 27nC
Kind of package: tube
Collector-emitter voltage: 600V
Features of semiconductor devices: integrated anti-parallel diode
Technology: TRENCHSTOP™
Collector current: 4A
Pulsed collector current: 12A
Turn-on time: 21ns
Turn-off time: 207ns
Gate-emitter voltage: ±20V
Anzahl je Verpackung: 1 Stücke
auf Bestellung 49 Stücke:
Lieferzeit 7-14 Tag (e)
28+2.57 EUR
43+1.69 EUR
49+1.46 EUR
500+1.16 EUR
Mindestbestellmenge: 28
Im Einkaufswagen  Stück im Wert von  UAH
IKP06N60TXKSA1 IKP06N60TXKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB82531ED99EDE2747C5EC7820&compId=IKP06N60T.pdf?ci_sign=fe7eb39bc96303d3dfea9fcce07ee1c6ee3290c4 Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 6A; 88W; TO220-3
Type of transistor: IGBT
Technology: TRENCHSTOP™
Power dissipation: 88W
Case: TO220-3
Mounting: THT
Gate charge: 42nC
Kind of package: tube
Gate-emitter voltage: ±20V
Features of semiconductor devices: integrated anti-parallel diode
Turn-off time: 188ns
Turn-on time: 15ns
Pulsed collector current: 18A
Collector-emitter voltage: 600V
Collector current: 6A
Anzahl je Verpackung: 1 Stücke
auf Bestellung 146 Stücke:
Lieferzeit 7-14 Tag (e)
37+1.96 EUR
42+1.73 EUR
61+1.17 EUR
65+1.12 EUR
500+1.07 EUR
Mindestbestellmenge: 37
Im Einkaufswagen  Stück im Wert von  UAH
IKP08N65H5XKSA1 IKP08N65H5XKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED5ABF4A5F4C2AA11CC&compId=IKP08N65H5-DTE.pdf?ci_sign=10d18d1a8c7b016c4dba2298e11ded404d5503e4 Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 18A; 70W; TO220-3; H5
Type of transistor: IGBT
Technology: TRENCHSTOP™ 5
Power dissipation: 70W
Case: TO220-3
Mounting: THT
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Gate charge: 22nC
Manufacturer series: H5
Gate-emitter voltage: ±20V
Collector-emitter voltage: 650V
Collector current: 18A
Pulsed collector current: 24A
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IKP10N60TXKSA1 IKP10N60TXKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FD65C1982C915EA&compId=IKP10N60T.pdf?ci_sign=3662fc1223253be4b0852eb3ea1462e0c0c8adde Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 10A; 110W; TO220AB
Type of transistor: IGBT
Power dissipation: 110W
Case: TO220AB
Mounting: THT
Gate charge: 62nC
Kind of package: tube
Collector-emitter voltage: 600V
Gate-emitter voltage: ±20V
Collector current: 10A
Pulsed collector current: 30A
Features of semiconductor devices: integrated anti-parallel diode
Anzahl je Verpackung: 1 Stücke
auf Bestellung 58 Stücke:
Lieferzeit 7-14 Tag (e)
25+2.95 EUR
56+1.29 EUR
58+1.23 EUR
500+1.22 EUR
Mindestbestellmenge: 25
Im Einkaufswagen  Stück im Wert von  UAH
IKP15N60TXKSA1 IKP15N60TXKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED5AAA8A5633DFAB1CC&compId=IKP15N60T-DTE.pdf?ci_sign=042facda16ad84d72f77461b1b1d79ca587b8db6 Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 15A; 130W; TO220-3
Type of transistor: IGBT
Technology: TRENCHSTOP™
Collector-emitter voltage: 600V
Collector current: 15A
Power dissipation: 130W
Case: TO220-3
Gate-emitter voltage: ±20V
Pulsed collector current: 45A
Mounting: THT
Gate charge: 87nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Anzahl je Verpackung: 1 Stücke
auf Bestellung 145 Stücke:
Lieferzeit 7-14 Tag (e)
30+2.45 EUR
37+1.96 EUR
48+1.50 EUR
50+1.43 EUR
500+1.42 EUR
Mindestbestellmenge: 30
Im Einkaufswagen  Stück im Wert von  UAH
IKP15N65F5XKSA1 IKP15N65F5XKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED885C6BF0AC93A8A18&compId=IKP15N65F5.pdf?ci_sign=813dd2687d113f2ce86cd4f9b1d438357d641c10 Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 18A; 52.5W; TO220-3; H5
Type of transistor: IGBT
Technology: TRENCHSTOP™ 5
Power dissipation: 52.5W
Case: TO220-3
Mounting: THT
Gate charge: 38nC
Kind of package: tube
Collector current: 18A
Features of semiconductor devices: integrated anti-parallel diode
Gate-emitter voltage: ±20V
Manufacturer series: H5
Turn-off time: 166ns
Turn-on time: 24ns
Collector-emitter voltage: 650V
Pulsed collector current: 45A
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IKP15N65H5XKSA1 IKP15N65H5XKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED685BDA57DFD7A71BF&compId=IKP15N65H5-DTE.pdf?ci_sign=a152a4dcb39347c0c777a80d3988833d2f0dbb62 Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 15A; 105W; TO220-3; H5
Type of transistor: IGBT
Case: TO220-3
Mounting: THT
Kind of package: tube
Power dissipation: 105W
Features of semiconductor devices: integrated anti-parallel diode
Gate charge: 38nC
Manufacturer series: H5
Collector-emitter voltage: 650V
Gate-emitter voltage: ±20V
Collector current: 15A
Pulsed collector current: 45A
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IHW20N120R5XKSA1 pVersion=0046&contRep=ZT&docId=005056AB281E1EDD9BE52A653EB120D3&compId=IHW20N120R5.pdf?ci_sign=9078d3fe050273e18820feb3c35340de2d9578db
IHW20N120R5XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; TRENCHSTOP™ RC; 1.2kV; 20A; 144W; TO247-3
Type of transistor: IGBT
Technology: TRENCHSTOP™ RC
Collector-emitter voltage: 1.2kV
Collector current: 20A
Power dissipation: 144W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 60A
Mounting: THT
Gate charge: 170nC
Kind of package: tube
Turn-off time: 440ns
Features of semiconductor devices: reverse conducting IGBT (RC-IGBT)
Anzahl je Verpackung: 1 Stücke
auf Bestellung 13 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
13+5.51 EUR
14+5.11 EUR
120+3.06 EUR
Mindestbestellmenge: 13
Im Einkaufswagen  Stück im Wert von  UAH
IHW20N135R5XKSA1 IHW20N135R5.pdf
IHW20N135R5XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; TRENCHSTOP™ RC; 1.35kV; 20A; 144W; TO247-3
Type of transistor: IGBT
Technology: TRENCHSTOP™ RC
Collector-emitter voltage: 1.35kV
Collector current: 20A
Power dissipation: 144W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 60A
Mounting: THT
Gate charge: 170nC
Kind of package: tube
Turn-off time: 440ns
Features of semiconductor devices: reverse conducting IGBT (RC-IGBT)
Anzahl je Verpackung: 1 Stücke
auf Bestellung 19 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
17+4.38 EUR
19+3.76 EUR
21+3.40 EUR
120+2.00 EUR
Mindestbestellmenge: 17
Im Einkaufswagen  Stück im Wert von  UAH
IHW20N65R5XKSA1 pVersion=0046&contRep=ZT&docId=005056AB82531ED99EDC6BCE91BE1820&compId=IHW20N65R5.pdf?ci_sign=b44b2ed99f625095237ebaf7c9ffdee8198ae140
IHW20N65R5XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 20A; 75W; TO247-3
Type of transistor: IGBT
Technology: TRENCHSTOP™ 5
Power dissipation: 75W
Case: TO247-3
Mounting: THT
Kind of package: tube
Features of semiconductor devices: reverse conducting IGBT (RC-IGBT)
Gate charge: 97nC
Gate-emitter voltage: ±20V
Collector-emitter voltage: 650V
Collector current: 20A
Pulsed collector current: 60A
Turn-off time: 257ns
Anzahl je Verpackung: 240 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IHW25N120E1XKSA1 pVersion=0046&contRep=ZT&docId=005056AB82531ED99EDC709B02919820&compId=IHW25N120E1.pdf?ci_sign=044805b42bcb3062c7f87ce990fa46fd76a11e9d
IHW25N120E1XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; TRENCHSTOP™ RC; 1.2kV; 25A; 92.4W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 25A
Power dissipation: 92.4W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 75A
Mounting: THT
Gate charge: 147nC
Kind of package: tube
Features of semiconductor devices: reverse conducting IGBT (RC-IGBT)
Technology: TRENCHSTOP™ RC
Turn-off time: 2004ns
Anzahl je Verpackung: 1 Stücke
auf Bestellung 204 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
14+5.46 EUR
27+2.67 EUR
29+2.53 EUR
120+2.43 EUR
Mindestbestellmenge: 14
Im Einkaufswagen  Stück im Wert von  UAH
IHW30N110R3FKSA1 DS_IHW30N110R3_1_2.pdf?folderId=db3a3043156fd5730115f56849b61941&fileId=db3a304327b897500127b963455e0089
Hersteller: INFINEON TECHNOLOGIES
IHW30N110R3 THT IGBT transistors
auf Bestellung 3 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
3+23.84 EUR
5+14.30 EUR
13+5.51 EUR
30+3.86 EUR
Mindestbestellmenge: 3
Im Einkaufswagen  Stück im Wert von  UAH
IHW30N120R5XKSA1 pVersion=0046&contRep=ZT&docId=005056AB82531ED99EDC84639C915820&compId=IHW30N120R5.pdf?ci_sign=89c6f0bb98f687ad7406821198f0deac2a7ce69f
IHW30N120R5XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; TRENCHSTOP™ RC; 1.2kV; 30A; 165W; TO247-3
Case: TO247-3
Mounting: THT
Power dissipation: 165W
Kind of package: tube
Features of semiconductor devices: reverse conducting IGBT (RC-IGBT)
Gate charge: 235nC
Technology: TRENCHSTOP™ RC
Collector-emitter voltage: 1.2kV
Gate-emitter voltage: ±20V
Collector current: 30A
Pulsed collector current: 90A
Turn-off time: 363ns
Type of transistor: IGBT
Anzahl je Verpackung: 1 Stücke
auf Bestellung 134 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
18+4.20 EUR
23+3.13 EUR
25+2.96 EUR
60+2.92 EUR
120+2.85 EUR
Mindestbestellmenge: 18
Im Einkaufswagen  Stück im Wert von  UAH
IHW30N135R5XKSA1 pVersion=0046&contRep=ZT&docId=005056AB82531EE990FA3259EB0638BF&compId=IHW30N135R5.pdf?ci_sign=39630b0ae55cb15d14870d0c776223ecce32001c
IHW30N135R5XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.35kV; 30A; 165W; TO247-3
Case: TO247-3
Mounting: THT
Power dissipation: 165W
Kind of package: tube
Features of semiconductor devices: reverse conducting IGBT (RC-IGBT)
Gate charge: 235nC
Technology: TRENCHSTOP™
Collector-emitter voltage: 1.35kV
Gate-emitter voltage: ±20V
Collector current: 30A
Pulsed collector current: 90A
Turn-off time: 680ns
Type of transistor: IGBT
Anzahl je Verpackung: 1 Stücke
auf Bestellung 20 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
15+4.88 EUR
20+3.58 EUR
60+3.20 EUR
Mindestbestellmenge: 15
Im Einkaufswagen  Stück im Wert von  UAH
IHW30N160R5XKSA1 pVersion=0046&contRep=ZT&docId=005056AB82531EE990FA46CB7F2218BF&compId=IHW30N160R5.pdf?ci_sign=f142f1feb3d530f98974a0719171f909d530cf4d
IHW30N160R5XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.6kV; 39A; 131.5W; TO247-3
Case: TO247-3
Mounting: THT
Power dissipation: 131.5W
Kind of package: tube
Features of semiconductor devices: reverse conducting IGBT (RC-IGBT)
Gate charge: 205nC
Technology: TRENCHSTOP™
Collector-emitter voltage: 1.6kV
Gate-emitter voltage: ±20V
Collector current: 39A
Pulsed collector current: 90A
Turn-off time: 411ns
Type of transistor: IGBT
Anzahl je Verpackung: 1 Stücke
auf Bestellung 5 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
5+14.30 EUR
12+5.96 EUR
60+3.76 EUR
Mindestbestellmenge: 5
Im Einkaufswagen  Stück im Wert von  UAH
IHW30N65R5XKSA1 Infineon-IHW30N65R5-DS-v02_01-EN.pdf?fileId=5546d4624d6fc3d5014db954d0454713
Hersteller: INFINEON TECHNOLOGIES
IHW30N65R5 THT IGBT transistors
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IHW40N120R5XKSA1 pVersion=0046&contRep=ZT&docId=005056AB82531ED99EDCA5EF2915F820&compId=IHW40N120R5.pdf?ci_sign=ff87a8c36a7c399a49fec60936b41c23e7a4c9aa
IHW40N120R5XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; TRENCHSTOP™ RC; 1.2kV; 40A; 197W; TO247-3
Type of transistor: IGBT
Power dissipation: 197W
Case: TO247-3
Mounting: THT
Gate charge: 310nC
Kind of package: tube
Technology: TRENCHSTOP™ RC
Collector-emitter voltage: 1.2kV
Gate-emitter voltage: ±20V
Collector current: 40A
Pulsed collector current: 120A
Turn-off time: 440ns
Features of semiconductor devices: reverse conducting IGBT (RC-IGBT)
Anzahl je Verpackung: 1 Stücke
auf Bestellung 34 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
12+6.29 EUR
21+3.53 EUR
22+3.35 EUR
60+3.23 EUR
120+3.22 EUR
Mindestbestellmenge: 12
Im Einkaufswagen  Stück im Wert von  UAH
IHW40N135R5XKSA1 Infineon-IHW40N135R5-DS-v02_02-EN.pdf?fileId=5546d462636cc8fb0163b0fe63f5326a
IHW40N135R5XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; TRENCHSTOP™ RC; 1.35kV; 40A; 197W; TO247-3
Case: TO247-3
Mounting: THT
Power dissipation: 197W
Kind of package: tube
Features of semiconductor devices: reverse conducting IGBT (RC-IGBT)
Gate charge: 305nC
Technology: TRENCHSTOP™ RC
Collector-emitter voltage: 1.35kV
Gate-emitter voltage: ±20V
Collector current: 40A
Pulsed collector current: 120A
Turn-off time: 0.5µs
Type of transistor: IGBT
Anzahl je Verpackung: 1 Stücke
auf Bestellung 216 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
11+6.82 EUR
20+3.76 EUR
21+3.55 EUR
120+3.42 EUR
Mindestbestellmenge: 11
Im Einkaufswagen  Stück im Wert von  UAH
IHW40N60RFKSA1 pVersion=0046&contRep=ZT&docId=005056AB82531ED99EDCBDE92FDCF820&compId=IHW40N60RF.pdf?ci_sign=82767ed05928b8e96282a1f045c5bab220a23d94
IHW40N60RFKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; TRENCHSTOP™ RC; 600V; 40A; 152W; TO247-3
Type of transistor: IGBT
Technology: TRENCHSTOP™ RC
Power dissipation: 152W
Case: TO247-3
Mounting: THT
Gate charge: 223nC
Kind of package: tube
Features of semiconductor devices: reverse conducting IGBT (RC-IGBT)
Collector current: 40A
Pulsed collector current: 120A
Turn-off time: 217ns
Gate-emitter voltage: ±20V
Collector-emitter voltage: 600V
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IHW40N65R5XKSA1 IHW40N65R5.pdf
IHW40N65R5XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 40A; 152W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 40A
Power dissipation: 152W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Mounting: THT
Gate charge: 193nC
Kind of package: tube
Turn-on time: 59ns
Turn-off time: 273ns
Features of semiconductor devices: reverse conducting IGBT (RC-IGBT)
Technology: TRENCHSTOP™ 5
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IHW40N65R6XKSA1 Infineon-IHW40N65R6-DataSheet-v01_20-EN.pdf?fileId=5546d46277fc7439017826e19dad7275
IHW40N65R6XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 54A; 105W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 54A
Power dissipation: 105W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Mounting: THT
Gate charge: 159nC
Kind of package: tube
Turn-on time: 36ns
Turn-off time: 256ns
Features of semiconductor devices: reverse conducting IGBT (RC-IGBT)
Anzahl je Verpackung: 1 Stücke
auf Bestellung 201 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
20+3.76 EUR
26+2.82 EUR
27+2.66 EUR
30+2.59 EUR
240+2.56 EUR
Mindestbestellmenge: 20
Im Einkaufswagen  Stück im Wert von  UAH
IHW50N65R5XKSA1 pVersion=0046&contRep=ZT&docId=005056AB82531ED99EDCFFAFB3183820&compId=IHW50N65R5.pdf?ci_sign=79609e9ed288e8af523721c936628f411dd72516
IHW50N65R5XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 50A; 141W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 50A
Power dissipation: 141W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 150A
Mounting: THT
Gate charge: 230nC
Kind of package: tube
Features of semiconductor devices: reverse conducting IGBT (RC-IGBT)
Technology: TRENCHSTOP™ 5
Turn-on time: 50ns
Turn-off time: 218ns
Anzahl je Verpackung: 1 Stücke
auf Bestellung 198 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
12+6.06 EUR
14+5.35 EUR
16+4.65 EUR
17+4.39 EUR
Mindestbestellmenge: 12
Im Einkaufswagen  Stück im Wert von  UAH
IKA06N60TXKSA1 IKA06N60T+Rev2_3G.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a304412b407950112b42868603dee
Hersteller: INFINEON TECHNOLOGIES
IKA06N60T THT IGBT transistors
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IKA10N60TXKSA1 pVersion=0046&contRep=ZT&docId=005056AB82531ED99EDD0C97D3F67820&compId=IKA10N60T.pdf?ci_sign=fadea912e4a2c8f589f65f7cdedf1af4db1bc744
IKA10N60TXKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 7.2A; 30W; TO220-3
Type of transistor: IGBT
Power dissipation: 30W
Case: TO220-3
Mounting: THT
Gate charge: 67nC
Kind of package: tube
Collector-emitter voltage: 600V
Gate-emitter voltage: ±20V
Collector current: 7.2A
Pulsed collector current: 30A
Turn-on time: 20ns
Turn-off time: 250ns
Features of semiconductor devices: integrated anti-parallel diode
Technology: TRENCHSTOP™
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IKA10N65ET6XKSA2 pVersion=0046&contRep=ZT&docId=005056AB752F1EE895EFAAFFDA7933D6&compId=IKA10N65ET6.pdf?ci_sign=357318a9289c8383d9971a53bdf9a9a379462c13
IKA10N65ET6XKSA2
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 9A; 20W; TO220FP; T6
Type of transistor: IGBT
Power dissipation: 20W
Case: TO220FP
Mounting: THT
Gate charge: 27nC
Kind of package: tube
Collector-emitter voltage: 650V
Gate-emitter voltage: ±20V
Collector current: 9A
Pulsed collector current: 42.5A
Features of semiconductor devices: integrated anti-parallel diode
Manufacturer series: T6
Technology: TRENCHSTOP™ 6
Anzahl je Verpackung: 1 Stücke
auf Bestellung 103 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
38+1.93 EUR
41+1.77 EUR
49+1.47 EUR
52+1.39 EUR
500+1.34 EUR
Mindestbestellmenge: 38
Im Einkaufswagen  Stück im Wert von  UAH
IKA15N60TXKSA1 pVersion=0046&contRep=ZT&docId=005056AB82531ED99EDD1E877C847820&compId=IKA15N60T.pdf?ci_sign=ce907b1e3bd538123e3a5020ae0c7b1b51be7942
IKA15N60TXKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 10.6A; 35.7W; TO220-3
Type of transistor: IGBT
Technology: TRENCHSTOP™
Power dissipation: 35.7W
Case: TO220-3
Mounting: THT
Gate charge: 87nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Collector-emitter voltage: 600V
Gate-emitter voltage: ±20V
Collector current: 10.6A
Pulsed collector current: 45A
Turn-on time: 28ns
Turn-off time: 238ns
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
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IKA15N65ET6XKSA2 pVersion=0046&contRep=ZT&docId=005056AB281E1EDE92E3A7A2ABEFC0D5&compId=IKA15N65ET6.pdf?ci_sign=a5d0997715c8dfdacffa9de02f1033ffc16b814e
IKA15N65ET6XKSA2
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 11A; 22W; TO220FP; T6
Type of transistor: IGBT
Technology: TRENCHSTOP™ 6
Case: TO220FP
Mounting: THT
Kind of package: tube
Power dissipation: 22W
Features of semiconductor devices: integrated anti-parallel diode
Gate charge: 37nC
Manufacturer series: T6
Collector-emitter voltage: 650V
Gate-emitter voltage: ±20V
Collector current: 11A
Pulsed collector current: 57.5A
Turn-on time: 50ns
Turn-off time: 202ns
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
1+71.50 EUR
10+7.15 EUR
11+6.51 EUR
29+2.46 EUR
250+1.49 EUR
Im Einkaufswagen  Stück im Wert von  UAH
IKB06N60TATMA1 IKB06N60T+Rev2_3G.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a304412b407950112b4286b603df2
Hersteller: INFINEON TECHNOLOGIES
IKB06N60TATMA1 SMD IGBT transistors
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IKB10N60TATMA1 pVersion=0046&contRep=ZT&docId=005056AB82531ED99EDD3C93FDBDF820&compId=IKB10N60T.pdf?ci_sign=ac3f6735529e5b82d20ec8c5b3cf138128615c0e
IKB10N60TATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD IGBT transistors
Description: Transistor: IGBT; 600V; 18A; 110W; D2PAK
Type of transistor: IGBT
Power dissipation: 110W
Case: D2PAK
Mounting: SMD
Gate charge: 62nC
Kind of package: reel; tape
Collector-emitter voltage: 600V
Gate-emitter voltage: ±20V
Collector current: 18A
Pulsed collector current: 30A
Turn-on time: 20ns
Turn-off time: 253ns
Features of semiconductor devices: integrated anti-parallel diode
Technology: TRENCHSTOP™
Anzahl je Verpackung: 1 Stücke
auf Bestellung 663 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
24+3.09 EUR
36+2.03 EUR
44+1.64 EUR
46+1.56 EUR
100+1.50 EUR
Mindestbestellmenge: 24
Im Einkaufswagen  Stück im Wert von  UAH
IKB15N60TATMA1 pVersion=0046&contRep=ZT&docId=005056AB82531ED99EDD41F72CB29820&compId=IKB15N60T.pdf?ci_sign=9b743b6df9c5530ebc7f8eee8c1770ec9a429f91
IKB15N60TATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD IGBT transistors
Description: Transistor: IGBT; 600V; 23A; 130W; D2PAK
Collector-emitter voltage: 600V
Gate-emitter voltage: ±20V
Collector current: 23A
Pulsed collector current: 45A
Turn-on time: 28ns
Turn-off time: 238ns
Type of transistor: IGBT
Power dissipation: 130W
Kind of package: reel; tape
Features of semiconductor devices: integrated anti-parallel diode
Gate charge: 87nC
Technology: TRENCHSTOP™
Mounting: SMD
Case: D2PAK
Anzahl je Verpackung: 1 Stücke
auf Bestellung 832 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
20+3.66 EUR
22+3.29 EUR
28+2.60 EUR
30+2.46 EUR
Mindestbestellmenge: 20
Im Einkaufswagen  Stück im Wert von  UAH
IKB15N65EH5ATMA1 pVersion=0046&contRep=ZT&docId=005056AB82531ED99EDD4741CB2AD820&compId=IKB15N65EH5.pdf?ci_sign=f41aca0c31e21ad8910ab653a5cd8be8dccade59
IKB15N65EH5ATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD IGBT transistors
Description: Transistor: IGBT; 650V; 18A; 52.5W; D2PAK
Type of transistor: IGBT
Technology: TRENCHSTOP™ 5
Case: D2PAK
Mounting: SMD
Kind of package: reel; tape
Power dissipation: 52.5W
Features of semiconductor devices: integrated anti-parallel diode
Gate charge: 38nC
Collector-emitter voltage: 650V
Gate-emitter voltage: ±20V
Collector current: 18A
Pulsed collector current: 45A
Turn-on time: 33ns
Turn-off time: 172ns
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IKB20N60H3ATMA1 pVersion=0046&contRep=ZT&docId=005056AB82531ED99EDD4BEE48ED3820&compId=IKB20N60H3.pdf?ci_sign=6e59697a1b11c9314964694537e7c76c6542e9f8
IKB20N60H3ATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD IGBT transistors
Description: Transistor: IGBT; 600V; 20A; 85W; D2PAK
Type of transistor: IGBT
Technology: TRENCHSTOP™
Power dissipation: 85W
Case: D2PAK
Mounting: SMD
Kind of package: reel; tape
Gate charge: 0.12µC
Collector-emitter voltage: 600V
Gate-emitter voltage: ±20V
Collector current: 20A
Pulsed collector current: 80A
Turn-on time: 36ns
Turn-off time: 205ns
Features of semiconductor devices: integrated anti-parallel diode
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IKB20N60TATMA1 pVersion=0046&contRep=ZT&docId=005056AB82531ED99EDD52D9F6417820&compId=IKB20N60T.pdf?ci_sign=c235205cf7eddca1fd52b37a7c3b186c20f8ddcc
IKB20N60TATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD IGBT transistors
Description: Transistor: IGBT; 600V; 28A; 166W; D2PAK
Type of transistor: IGBT
Technology: TRENCHSTOP™
Power dissipation: 166W
Case: D2PAK
Mounting: SMD
Kind of package: reel; tape
Gate charge: 0.12µC
Collector-emitter voltage: 600V
Gate-emitter voltage: ±20V
Collector current: 28A
Pulsed collector current: 60A
Turn-on time: 32ns
Turn-off time: 241ns
Features of semiconductor devices: integrated anti-parallel diode
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IKB20N65EH5ATMA1 pVersion=0046&contRep=ZT&docId=005056AB82531ED99EDD5B574119B820&compId=IKB20N65EH5.pdf?ci_sign=84117916d2af3cf46356ecf8de4185ed193d681c
IKB20N65EH5ATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD IGBT transistors
Description: Transistor: IGBT; 650V; 25A; 62.5W; D2PAK
Type of transistor: IGBT
Technology: TRENCHSTOP™ 5
Power dissipation: 62.5W
Case: D2PAK
Mounting: SMD
Kind of package: reel; tape
Features of semiconductor devices: integrated anti-parallel diode
Gate charge: 48nC
Gate-emitter voltage: ±20V
Collector-emitter voltage: 650V
Collector current: 25A
Pulsed collector current: 60A
Turn-on time: 40ns
Turn-off time: 183ns
Anzahl je Verpackung: 1 Stücke
auf Bestellung 919 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
15+4.80 EUR
25+2.92 EUR
26+2.76 EUR
100+2.66 EUR
Mindestbestellmenge: 15
Im Einkaufswagen  Stück im Wert von  UAH
IKB30N65EH5ATMA1 Infineon-IKB30N65EH5-DS-v02_01-EN.pdf?fileId=5546d46262b31d2e0162cd134705491a
Hersteller: INFINEON TECHNOLOGIES
IKB30N65EH5ATMA1 SMD IGBT transistors
Produkt ist nicht verfügbar
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IKB30N65ES5ATMA1 Infineon-IKB30N65ES5-DS-v02_01-EN.pdf?fileId=5546d46262b31d2e0162cd135b40491d
Hersteller: INFINEON TECHNOLOGIES
IKB30N65ES5ATMA1 SMD IGBT transistors
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IKB40N65EF5ATMA1 IKB40N65EF5.pdf
IKB40N65EF5ATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD IGBT transistors
Description: Transistor: IGBT; 650V; 46A; 125W; D2PAK
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 46A
Power dissipation: 125W
Case: D2PAK
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Mounting: SMD
Gate charge: 95nC
Kind of package: reel; tape
Turn-on time: 56ns
Turn-off time: 212ns
Features of semiconductor devices: integrated anti-parallel diode
Technology: TRENCHSTOP™ 5
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IKB40N65EH5ATMA1 IKB40N65EH5.pdf
IKB40N65EH5ATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD IGBT transistors
Description: Transistor: IGBT; 650V; 46A; 125W; D2PAK
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 46A
Power dissipation: 125W
Case: D2PAK
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Mounting: SMD
Gate charge: 95nC
Kind of package: reel; tape
Turn-on time: 34ns
Turn-off time: 178ns
Features of semiconductor devices: integrated anti-parallel diode
Technology: TRENCHSTOP™ 5
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IKB40N65ES5ATMA1 IKB40N65ES5.pdf
IKB40N65ES5ATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD IGBT transistors
Description: Transistor: IGBT; 650V; 50A; 115W; D2PAK
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 50A
Power dissipation: 115W
Case: D2PAK
Gate-emitter voltage: ±20V
Pulsed collector current: 160A
Mounting: SMD
Gate charge: 95nC
Kind of package: reel; tape
Turn-on time: 37ns
Turn-off time: 153ns
Features of semiconductor devices: integrated anti-parallel diode
Technology: TRENCHSTOP™ 5
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
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IKCM10H60GAXKMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE89BACDC852B5593D7&compId=IKCM10H60GA.pdf?ci_sign=4b5a98fd60881639d3b88e907a50e2961c030923
IKCM10H60GAXKMA1
Hersteller: INFINEON TECHNOLOGIES
Category: Motor and PWM drivers
Description: IC: driver; IGBT three-phase bridge,thermistor; PG-MDIP24; 20kHz
Type of integrated circuit: driver
Topology: IGBT three-phase bridge; thermistor
Kind of integrated circuit: 3-phase motor controller; IPM
Technology: ClPOS™ Mini; TRENCHSTOP™
Case: PG-MDIP24
Output current: -10...10A
Mounting: THT
Operating temperature: -40...125°C
Operating voltage: 13.5...18.5/0...400V DC
Frequency: 20kHz
Power dissipation: 23.1W
Integrated circuit features: integrated bootstrap functionality
Voltage class: 600V
Anzahl je Verpackung: 1 Stücke
auf Bestellung 25 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
6+12.37 EUR
8+8.97 EUR
Mindestbestellmenge: 6
Im Einkaufswagen  Stück im Wert von  UAH
IKCM10L60GAXKMA1 IKCM10L60GA.pdf
IKCM10L60GAXKMA1
Hersteller: INFINEON TECHNOLOGIES
Category: Motor and PWM drivers
Description: IC: driver; IGBT three-phase bridge,thermistor; PG-MDIP24; 20kHz
Type of integrated circuit: driver
Topology: IGBT three-phase bridge; thermistor
Kind of integrated circuit: 3-phase motor controller; IPM
Technology: ClPOS™ Mini; TRENCHSTOP™
Case: PG-MDIP24
Output current: -10...10A
Integrated circuit features: integrated bootstrap functionality
Mounting: THT
Operating temperature: -40...125°C
Operating voltage: 13.5...18.5/0...400V DC
Frequency: 20kHz
Voltage class: 600V
Power dissipation: 25.2W
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
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IKCM15H60GAXKMA2 pVersion=0046&contRep=ZT&docId=005056AB752F1EE89BACE685ADE5B3D7&compId=IKCM15H60GA.pdf?ci_sign=b05a44ba28f3534652439353305f4e3dde92d0c0
IKCM15H60GAXKMA2
Hersteller: INFINEON TECHNOLOGIES
Category: Motor and PWM drivers
Description: IC: driver; IGBT three-phase bridge,thermistor; PG-MDIP24; 20kHz
Type of integrated circuit: driver
Topology: IGBT three-phase bridge; thermistor
Kind of integrated circuit: 3-phase motor controller; IPM
Technology: ClPOS™ Mini; TRENCHSTOP™
Case: PG-MDIP24
Output current: -15...15A
Integrated circuit features: integrated bootstrap functionality
Mounting: THT
Operating temperature: -40...125°C
Operating voltage: 13.5...18.5/0...400V DC
Frequency: 20kHz
Voltage class: 600V
Power dissipation: 25.2W
Anzahl je Verpackung: 1 Stücke
auf Bestellung 17 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
6+14.26 EUR
7+10.22 EUR
Mindestbestellmenge: 6
Im Einkaufswagen  Stück im Wert von  UAH
IKCM15L60GDXKMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE89BACEA79D16AF3D7&compId=IKCM15L60GD.pdf?ci_sign=398345fa98c1b63f7ad382e4628995eafd40f542
IKCM15L60GDXKMA1
Hersteller: INFINEON TECHNOLOGIES
Category: Motor and PWM drivers
Description: IC: driver; IGBT three-phase bridge,thermistor; PG-MDIP24; 20kHz
Type of integrated circuit: driver
Topology: IGBT three-phase bridge; thermistor
Kind of integrated circuit: 3-phase motor controller; IPM
Technology: ClPOS™ Mini; TRENCHSTOP™
Case: PG-MDIP24
Output current: -15...15A
Integrated circuit features: integrated bootstrap functionality
Mounting: THT
Operating temperature: -40...125°C
Operating voltage: 13.5...18.5/0...400V DC
Frequency: 20kHz
Voltage class: 600V
Power dissipation: 58.6W
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IKCM20L60GAXKMA1 IKCM20L60GA.pdf
IKCM20L60GAXKMA1
Hersteller: INFINEON TECHNOLOGIES
Category: Motor and PWM drivers
Description: IC: driver; IGBT three-phase bridge,thermistor; PG-MDIP24; 20kHz
Type of integrated circuit: driver
Topology: IGBT three-phase bridge; thermistor
Kind of integrated circuit: 3-phase motor controller; IPM
Technology: ClPOS™ Mini; TRENCHSTOP™
Case: PG-MDIP24
Output current: -20...20A
Integrated circuit features: integrated bootstrap functionality
Mounting: THT
Operating temperature: -40...125°C
Operating voltage: 13.5...18.5/0...400V DC
Frequency: 20kHz
Voltage class: 600V
Power dissipation: 29.2W
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IKCM30F60GAXKMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED6BCD5B09CEE67DE28&compId=IKCM30F60GA.pdf?ci_sign=783f1af8ac5ce8035a854959701563b15dac9467
IKCM30F60GAXKMA1
Hersteller: INFINEON TECHNOLOGIES
Category: Motor and PWM drivers
Description: IC: driver; IGBT three-phase bridge,thermistor; PG-MDIP24; 20kHz
Type of integrated circuit: driver
Topology: IGBT three-phase bridge; thermistor
Kind of integrated circuit: 3-phase motor controller; IPM
Technology: ClPOS™ Mini; TRENCHSTOP™
Case: PG-MDIP24
Output current: -20...20A
Mounting: THT
Operating temperature: -40...125°C
Operating voltage: 13.5...18.5/0...400V DC
Frequency: 20kHz
Power dissipation: 30.3W
Integrated circuit features: integrated bootstrap functionality
Protection: anti-overload OPP; undervoltage UVP
Voltage class: 600V
Anzahl je Verpackung: 1 Stücke
auf Bestellung 13 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
3+24.42 EUR
Mindestbestellmenge: 3
Im Einkaufswagen  Stück im Wert von  UAH
IKD03N60RFATMA1 pVersion=0046&contRep=ZT&docId=005056AB82531ED99EDD8E80508A9820&compId=IKD03N60RF.pdf?ci_sign=68d6aad35e656a07d48ac99a74b3916ffc4e27e4
IKD03N60RFATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD IGBT transistors
Description: Transistor: IGBT; TRENCHSTOP™ RC; 600V; 6A; 53.6W; DPAK
Type of transistor: IGBT
Technology: TRENCHSTOP™ RC
Power dissipation: 53.6W
Case: DPAK
Mounting: SMD
Gate charge: 17.1nC
Kind of package: reel; tape
Collector-emitter voltage: 600V
Features of semiconductor devices: integrated anti-parallel diode
Collector current: 6A
Pulsed collector current: 7.5A
Turn-on time: 17ns
Turn-off time: 265ns
Gate-emitter voltage: ±20V
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IKD04N60RATMA1 pVersion=0046&contRep=ZT&docId=005056AB82531ED99EDDA3E2ACF23820&compId=IKD04N60R.pdf?ci_sign=6efd6340cc350b45c24c45eb5a27009029527dee
IKD04N60RATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD IGBT transistors
Description: Transistor: IGBT; TRENCHSTOP™ RC; 600V; 4A; 75W; DPAK
Type of transistor: IGBT
Power dissipation: 75W
Case: DPAK
Mounting: SMD
Gate charge: 27nC
Kind of package: reel; tape
Collector-emitter voltage: 600V
Features of semiconductor devices: integrated anti-parallel diode
Technology: TRENCHSTOP™ RC
Collector current: 4A
Pulsed collector current: 12A
Turn-on time: 22ns
Turn-off time: 317ns
Gate-emitter voltage: ±20V
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2479 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
41+1.74 EUR
65+1.10 EUR
121+0.59 EUR
128+0.56 EUR
1000+0.54 EUR
Mindestbestellmenge: 41
Im Einkaufswagen  Stück im Wert von  UAH
IKD04N60RFATMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED783FA69A7DB8B0259&compId=IKD04N60RF.pdf?ci_sign=a5c7bbdc7a42672854858807ced6a63c83269dd0
IKD04N60RFATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD IGBT transistors
Description: Transistor: IGBT; 600V; 4A; 75W; DPAK
Type of transistor: IGBT
Power dissipation: 75W
Case: DPAK
Mounting: SMD
Gate charge: 27nC
Kind of package: reel; tape
Collector-emitter voltage: 600V
Features of semiconductor devices: integrated anti-parallel diode
Technology: TRENCHSTOP™
Collector current: 4A
Pulsed collector current: 12A
Gate-emitter voltage: ±20V
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IKD06N60RATMA1 pVersion=0046&contRep=ZT&docId=005056AB82531ED99EDDD3F1CDA1D820&compId=IKD06N60R.pdf?ci_sign=c4b8048f27233912a33abdef90e7ecad642b9369
IKD06N60RATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD IGBT transistors
Description: Transistor: IGBT; TRENCHSTOP™ RC; 600V; 6A; 100W; DPAK
Type of transistor: IGBT
Technology: TRENCHSTOP™ RC
Power dissipation: 100W
Case: DPAK
Mounting: SMD
Gate charge: 48nC
Kind of package: reel; tape
Gate-emitter voltage: ±20V
Features of semiconductor devices: integrated anti-parallel diode
Turn-off time: 279ns
Turn-on time: 19ns
Pulsed collector current: 18A
Collector-emitter voltage: 600V
Collector current: 6A
Anzahl je Verpackung: 1 Stücke
auf Bestellung 833 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
37+1.94 EUR
59+1.23 EUR
93+0.77 EUR
99+0.73 EUR
500+0.70 EUR
Mindestbestellmenge: 37
Im Einkaufswagen  Stück im Wert von  UAH
IKD06N60RFATMA1 Infineon-EiceDRIVER_Gate_Driver_ICs-ProductSelectionGuide-v02_00-EN.pdf?fileId=8ac78c8c80027ecd018094fa56806ee1&redirId=195507
Hersteller: INFINEON TECHNOLOGIES
IKD06N60RFATMA1 SMD IGBT transistors
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IKD10N60RATMA1 pVersion=0046&contRep=ZT&docId=005056AB82531ED99EDDE350DCA63820&compId=IKD10N60R.pdf?ci_sign=ecb612de43b087b36cf1e0a347077a0e414f088b
IKD10N60RATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD IGBT transistors
Description: Transistor: IGBT; TRENCHSTOP™ RC; 600V; 10A; 150W; DPAK
Type of transistor: IGBT
Power dissipation: 150W
Case: DPAK
Mounting: SMD
Gate charge: 64nC
Kind of package: reel; tape
Features of semiconductor devices: integrated anti-parallel diode
Technology: TRENCHSTOP™ RC
Gate-emitter voltage: ±20V
Collector current: 10A
Pulsed collector current: 30A
Turn-on time: 24ns
Turn-off time: 331ns
Collector-emitter voltage: 600V
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IKD10N60RFATMA1 pVersion=0046&contRep=ZT&docId=005056AB82531ED99EDDE9EBA7B4D820&compId=IKD10N60RF.pdf?ci_sign=ff07afe3ccf9dab31c2c7d5cd2c6e1307060f858
IKD10N60RFATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD IGBT transistors
Description: Transistor: IGBT; TRENCHSTOP™ RC; 600V; 10A; 150W; DPAK
Type of transistor: IGBT
Power dissipation: 150W
Case: DPAK
Mounting: SMD
Gate charge: 64nC
Kind of package: reel; tape
Features of semiconductor devices: integrated anti-parallel diode
Technology: TRENCHSTOP™ RC
Gate-emitter voltage: ±20V
Collector current: 10A
Pulsed collector current: 30A
Turn-on time: 27ns
Turn-off time: 186ns
Collector-emitter voltage: 600V
Anzahl je Verpackung: 2500 Stücke
Produkt ist nicht verfügbar
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IKD15N60RATMA1 pVersion=0046&contRep=ZT&docId=005056AB82531ED99EDDF1E34C9ED820&compId=IKD15N60R.pdf?ci_sign=edf8c9498bddcc0bab7c28dab797b14b4d8a5a23
IKD15N60RATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD IGBT transistors
Description: Transistor: IGBT; TRENCHSTOP™ RC; 600V; 15A; 250W; DPAK
Type of transistor: IGBT
Technology: TRENCHSTOP™ RC
Power dissipation: 250W
Case: DPAK
Mounting: SMD
Gate charge: 90nC
Kind of package: reel; tape
Features of semiconductor devices: integrated anti-parallel diode
Collector-emitter voltage: 600V
Gate-emitter voltage: ±20V
Collector current: 15A
Pulsed collector current: 45A
Turn-on time: 26ns
Turn-off time: 319ns
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1976 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
25+2.87 EUR
39+1.87 EUR
47+1.54 EUR
50+1.46 EUR
100+1.40 EUR
Mindestbestellmenge: 25
Im Einkaufswagen  Stück im Wert von  UAH
IKD15N60RFATMA1 pVersion=0046&contRep=ZT&docId=005056AB82531ED99EDDF85E72955820&compId=IKD15N60RF.pdf?ci_sign=9b3a2a6a184bf30583c6686dacdbdd53ba4602b7
IKD15N60RFATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD IGBT transistors
Description: Transistor: IGBT; TRENCHSTOP™ RC; 600V; 15A; 250W; DPAK
Type of transistor: IGBT
Technology: TRENCHSTOP™ RC
Power dissipation: 250W
Case: DPAK
Mounting: SMD
Gate charge: 90nC
Kind of package: reel; tape
Features of semiconductor devices: integrated anti-parallel diode
Collector-emitter voltage: 600V
Gate-emitter voltage: ±20V
Collector current: 15A
Pulsed collector current: 45A
Turn-on time: 28ns
Turn-off time: 177ns
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IKFW40N60DH3EXKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE889B9AAD001B273D1&compId=IKFW40N60DH3E.pdf?ci_sign=d3d3fa4018878730715399a693c9252b7a658397
IKFW40N60DH3EXKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 28A; 81W; PG-TO247-3-AI
Type of transistor: IGBT
Technology: TRENCHSTOP™
Power dissipation: 81W
Case: PG-TO247-3-AI
Mounting: THT
Gate charge: 107nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Collector current: 28A
Pulsed collector current: 90A
Turn-on time: 52ns
Turn-off time: 160ns
Gate-emitter voltage: ±20V
Collector-emitter voltage: 600V
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IKFW50N60DH3EXKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE889B9E65EA81B13D1&compId=IKFW50N60DH3E.pdf?ci_sign=9aec02af7ba15dd5f0fcbd322c4880e0cd8ecdd5
IKFW50N60DH3EXKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 37A; 95W; PG-TO247-3-AI
Type of transistor: IGBT
Technology: TRENCHSTOP™
Power dissipation: 95W
Case: PG-TO247-3-AI
Mounting: THT
Gate charge: 160nC
Kind of package: tube
Turn-off time: 192ns
Features of semiconductor devices: integrated anti-parallel diode
Collector-emitter voltage: 600V
Gate-emitter voltage: ±20V
Collector current: 37A
Pulsed collector current: 120A
Turn-on time: 60ns
Anzahl je Verpackung: 1 Stücke
auf Bestellung 6 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
6+11.91 EUR
9+7.95 EUR
480+4.89 EUR
Mindestbestellmenge: 6
Im Einkaufswagen  Stück im Wert von  UAH
IKFW50N60ETXKSA1 pVersion=0046&contRep=ZT&docId=005056AB82531ED99EDE1A560ED2F820&compId=IKFW50N60ET.pdf?ci_sign=1dc63477d7ea1d12e4dda3141dab1803566a6fe8
IKFW50N60ETXKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 59A; 120W; PG-TO247-3-AI
Type of transistor: IGBT
Technology: TRENCHSTOP™
Power dissipation: 120W
Case: PG-TO247-3-AI
Mounting: THT
Gate charge: 290nC
Kind of package: tube
Turn-off time: 332ns
Features of semiconductor devices: integrated anti-parallel diode
Collector-emitter voltage: 600V
Gate-emitter voltage: ±20V
Collector current: 59A
Pulsed collector current: 150A
Turn-on time: 61ns
Anzahl je Verpackung: 240 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IKFW60N60DH3EXKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE889B9F00A97F393D1&compId=IKFW60N60DH3E.pdf?ci_sign=66fa90d9f11cedce9cdc0e769fa76651b50686b7
IKFW60N60DH3EXKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 44A; 104W; PG-TO247-3-AI
Type of transistor: IGBT
Technology: TRENCHSTOP™
Power dissipation: 104W
Case: PG-TO247-3-AI
Mounting: THT
Gate charge: 0.21µC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Collector current: 44A
Pulsed collector current: 150A
Turn-on time: 62ns
Turn-off time: 189ns
Gate-emitter voltage: ±20V
Collector-emitter voltage: 600V
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
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IKFW60N60EH3XKSA1 Infineon-IKFW60N60EH3-DS-v02_01-EN.pdf?fileId=5546d46262b31d2e0163016e787232af
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 50A; 164W; TO247-3
Type of transistor: IGBT
Technology: TRENCHSTOP™
Power dissipation: 164W
Case: TO247-3
Mounting: THT
Gate charge: 290nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Collector current: 50A
Pulsed collector current: 200A
Turn-on time: 64ns
Turn-off time: 253ns
Gate-emitter voltage: ±20V
Collector-emitter voltage: 600V
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IKFW90N60EH3XKSA1 Infineon-IKFW90N60EH3-DS-v02_01-EN.pdf?fileId=5546d46262b31d2e0163016e976f32b5
Hersteller: INFINEON TECHNOLOGIES
IKFW90N60EH3XKSA1 THT IGBT transistors
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IKP04N60TXKSA1 pVersion=0046&contRep=ZT&docId=005056AB82531ED99EDE22916DB05820&compId=IKP04N60T.pdf?ci_sign=79887e35e97dee3f47a5ed0ea9755ace78373099
IKP04N60TXKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 4A; 42W; TO220-3
Type of transistor: IGBT
Power dissipation: 42W
Case: TO220-3
Mounting: THT
Gate charge: 27nC
Kind of package: tube
Collector-emitter voltage: 600V
Features of semiconductor devices: integrated anti-parallel diode
Technology: TRENCHSTOP™
Collector current: 4A
Pulsed collector current: 12A
Turn-on time: 21ns
Turn-off time: 207ns
Gate-emitter voltage: ±20V
Anzahl je Verpackung: 1 Stücke
auf Bestellung 49 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
28+2.57 EUR
43+1.69 EUR
49+1.46 EUR
500+1.16 EUR
Mindestbestellmenge: 28
Im Einkaufswagen  Stück im Wert von  UAH
IKP06N60TXKSA1 pVersion=0046&contRep=ZT&docId=005056AB82531ED99EDE2747C5EC7820&compId=IKP06N60T.pdf?ci_sign=fe7eb39bc96303d3dfea9fcce07ee1c6ee3290c4
IKP06N60TXKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 6A; 88W; TO220-3
Type of transistor: IGBT
Technology: TRENCHSTOP™
Power dissipation: 88W
Case: TO220-3
Mounting: THT
Gate charge: 42nC
Kind of package: tube
Gate-emitter voltage: ±20V
Features of semiconductor devices: integrated anti-parallel diode
Turn-off time: 188ns
Turn-on time: 15ns
Pulsed collector current: 18A
Collector-emitter voltage: 600V
Collector current: 6A
Anzahl je Verpackung: 1 Stücke
auf Bestellung 146 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
37+1.96 EUR
42+1.73 EUR
61+1.17 EUR
65+1.12 EUR
500+1.07 EUR
Mindestbestellmenge: 37
Im Einkaufswagen  Stück im Wert von  UAH
IKP08N65H5XKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED5ABF4A5F4C2AA11CC&compId=IKP08N65H5-DTE.pdf?ci_sign=10d18d1a8c7b016c4dba2298e11ded404d5503e4
IKP08N65H5XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 18A; 70W; TO220-3; H5
Type of transistor: IGBT
Technology: TRENCHSTOP™ 5
Power dissipation: 70W
Case: TO220-3
Mounting: THT
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Gate charge: 22nC
Manufacturer series: H5
Gate-emitter voltage: ±20V
Collector-emitter voltage: 650V
Collector current: 18A
Pulsed collector current: 24A
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IKP10N60TXKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FD65C1982C915EA&compId=IKP10N60T.pdf?ci_sign=3662fc1223253be4b0852eb3ea1462e0c0c8adde
IKP10N60TXKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 10A; 110W; TO220AB
Type of transistor: IGBT
Power dissipation: 110W
Case: TO220AB
Mounting: THT
Gate charge: 62nC
Kind of package: tube
Collector-emitter voltage: 600V
Gate-emitter voltage: ±20V
Collector current: 10A
Pulsed collector current: 30A
Features of semiconductor devices: integrated anti-parallel diode
Anzahl je Verpackung: 1 Stücke
auf Bestellung 58 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
25+2.95 EUR
56+1.29 EUR
58+1.23 EUR
500+1.22 EUR
Mindestbestellmenge: 25
Im Einkaufswagen  Stück im Wert von  UAH
IKP15N60TXKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED5AAA8A5633DFAB1CC&compId=IKP15N60T-DTE.pdf?ci_sign=042facda16ad84d72f77461b1b1d79ca587b8db6
IKP15N60TXKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 15A; 130W; TO220-3
Type of transistor: IGBT
Technology: TRENCHSTOP™
Collector-emitter voltage: 600V
Collector current: 15A
Power dissipation: 130W
Case: TO220-3
Gate-emitter voltage: ±20V
Pulsed collector current: 45A
Mounting: THT
Gate charge: 87nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Anzahl je Verpackung: 1 Stücke
auf Bestellung 145 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
30+2.45 EUR
37+1.96 EUR
48+1.50 EUR
50+1.43 EUR
500+1.42 EUR
Mindestbestellmenge: 30
Im Einkaufswagen  Stück im Wert von  UAH
IKP15N65F5XKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED885C6BF0AC93A8A18&compId=IKP15N65F5.pdf?ci_sign=813dd2687d113f2ce86cd4f9b1d438357d641c10
IKP15N65F5XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 18A; 52.5W; TO220-3; H5
Type of transistor: IGBT
Technology: TRENCHSTOP™ 5
Power dissipation: 52.5W
Case: TO220-3
Mounting: THT
Gate charge: 38nC
Kind of package: tube
Collector current: 18A
Features of semiconductor devices: integrated anti-parallel diode
Gate-emitter voltage: ±20V
Manufacturer series: H5
Turn-off time: 166ns
Turn-on time: 24ns
Collector-emitter voltage: 650V
Pulsed collector current: 45A
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IKP15N65H5XKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED685BDA57DFD7A71BF&compId=IKP15N65H5-DTE.pdf?ci_sign=a152a4dcb39347c0c777a80d3988833d2f0dbb62
IKP15N65H5XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 15A; 105W; TO220-3; H5
Type of transistor: IGBT
Case: TO220-3
Mounting: THT
Kind of package: tube
Power dissipation: 105W
Features of semiconductor devices: integrated anti-parallel diode
Gate charge: 38nC
Manufacturer series: H5
Collector-emitter voltage: 650V
Gate-emitter voltage: ±20V
Collector current: 15A
Pulsed collector current: 45A
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
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