Produkte > INFINEON TECHNOLOGIES > Alle Produkte des Herstellers INFINEON TECHNOLOGIES (149711) > Seite 1265 nach 2496
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BSS123IXTSA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 100V; 0.15A; Idm: 0.77A; 0.5W; SOT23 Case: SOT23 Mounting: SMD Type of transistor: N-MOSFET Technology: OptiMOS™ Gate charge: 0.63nC Drain current: 0.15A Power dissipation: 0.5W Pulsed drain current: 0.77A On-state resistance: 10Ω Gate-source voltage: ±20V Drain-source voltage: 100V Polarisation: unipolar Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 164 Stücke: Lieferzeit 7-14 Tag (e) |
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BSS123NH6327XTSA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 100V; 0.15A; Idm: 0.77A; 0.5W; SOT23 Case: SOT23 Mounting: SMD Type of transistor: N-MOSFET Technology: OptiMOS™ Gate charge: 0.6nC Drain current: 0.15A Power dissipation: 0.5W Pulsed drain current: 0.77A On-state resistance: 10Ω Gate-source voltage: ±20V Drain-source voltage: 100V Polarisation: unipolar Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 17566 Stücke: Lieferzeit 7-14 Tag (e) |
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BSS123NH6433XTMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 100V; 0.15A; Idm: 0.77A; 0.5W; SOT23 Case: SOT23 Mounting: SMD Type of transistor: N-MOSFET Technology: OptiMOS™ Gate charge: 0.6nC Drain current: 0.15A Power dissipation: 0.5W Pulsed drain current: 0.77A On-state resistance: 10Ω Gate-source voltage: ±20V Drain-source voltage: 100V Polarisation: unipolar Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 10157 Stücke: Lieferzeit 7-14 Tag (e) |
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BSS126H6327XTSA2 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 600V; 0.021A; 0.5W; SOT23 Case: SOT23 Mounting: SMD Type of transistor: N-MOSFET Technology: SIPMOS™ Drain current: 21mA Power dissipation: 0.5W On-state resistance: 700Ω Gate-source voltage: ±20V Drain-source voltage: 600V Polarisation: unipolar Kind of channel: depletion Anzahl je Verpackung: 1 Stücke |
auf Bestellung 2446 Stücke: Lieferzeit 7-14 Tag (e) |
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BSS127H6327XTSA2 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 600V; 0.021A; 0.5W; SOT23 Case: SOT23 Mounting: SMD Type of transistor: N-MOSFET Technology: SIPMOS™ Drain current: 21mA Power dissipation: 0.5W On-state resistance: 500Ω Gate-source voltage: ±20V Drain-source voltage: 600V Polarisation: unipolar Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 3336 Stücke: Lieferzeit 7-14 Tag (e) |
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BSS131H6327XTSA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 240V; 0.1A; 0.36W; SOT23 Type of transistor: N-MOSFET Technology: SIPMOS™ Polarisation: unipolar Drain-source voltage: 240V Drain current: 0.1A Power dissipation: 0.36W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 14Ω Mounting: SMD Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 3788 Stücke: Lieferzeit 7-14 Tag (e) |
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BSS138NH6327XTSA2 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 60V; 0.23A; 0.36W; SOT23 Type of transistor: N-MOSFET Technology: SIPMOS™ Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.23A Power dissipation: 0.36W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 3.5Ω Mounting: SMD Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 14853 Stücke: Lieferzeit 7-14 Tag (e) |
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BSS138WH6327XTSA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 60V; 0.28A; 0.5W; SOT323 Type of transistor: N-MOSFET Technology: SIPMOS™ Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.28A Power dissipation: 0.5W Case: SOT323 Gate-source voltage: ±20V On-state resistance: 3.5Ω Mounting: SMD Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 668 Stücke: Lieferzeit 7-14 Tag (e) |
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BSS139H6327XTSA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 250V; 0.1A; 0.36W; SOT23 Type of transistor: N-MOSFET Technology: SIPMOS™ Polarisation: unipolar Drain-source voltage: 250V Drain current: 0.1A Power dissipation: 0.36W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 30Ω Mounting: SMD Kind of channel: depletion Anzahl je Verpackung: 1 Stücke |
auf Bestellung 7469 Stücke: Lieferzeit 7-14 Tag (e) |
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BSS159NH6327XTSA2 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 60V; 0.23A; 0.36W; SOT23 Type of transistor: N-MOSFET Technology: SIPMOS™ Mounting: SMD Polarisation: unipolar Drain current: 0.23A Power dissipation: 0.36W On-state resistance: 8Ω Gate-source voltage: ±20V Drain-source voltage: 60V Kind of channel: depletion Case: SOT23 Anzahl je Verpackung: 1 Stücke |
auf Bestellung 1043 Stücke: Lieferzeit 7-14 Tag (e) |
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BSS169H6327XTSA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 100V; 0.17A; 0.36W; SOT23 Case: SOT23 Mounting: SMD Technology: SIPMOS™ Polarisation: unipolar Drain current: 0.17A Power dissipation: 0.36W On-state resistance: 12Ω Gate-source voltage: ±20V Drain-source voltage: 100V Kind of channel: depletion Type of transistor: N-MOSFET Anzahl je Verpackung: 1 Stücke |
auf Bestellung 2630 Stücke: Lieferzeit 7-14 Tag (e) |
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BSS192PH6327FTSA1 | INFINEON TECHNOLOGIES |
Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -250V; -0.19A; 1W; SOT89 Type of transistor: P-MOSFET Technology: SIPMOS™ Polarisation: unipolar Drain-source voltage: -250V Drain current: -190mA Power dissipation: 1W Case: SOT89 Gate-source voltage: ±20V On-state resistance: 12Ω Mounting: SMD Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| BSS205NH6327XTSA1 | INFINEON TECHNOLOGIES |
BSS205NH6327XTSA1 SMD N channel transistors |
auf Bestellung 5989 Stücke: Lieferzeit 7-14 Tag (e) |
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BSS209PWH6327XTSA1 | INFINEON TECHNOLOGIES |
Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -20V; -0.63A; 0.3W; PG-SOT-323 Case: PG-SOT-323 Mounting: SMD Gate-source voltage: ±12V Kind of channel: enhancement Technology: OptiMOS™ P Type of transistor: P-MOSFET Polarisation: unipolar Drain current: -630mA Drain-source voltage: -20V On-state resistance: 0.55Ω Power dissipation: 0.3W Anzahl je Verpackung: 1 Stücke |
auf Bestellung 3649 Stücke: Lieferzeit 7-14 Tag (e) |
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BSS214NH6327XTSA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 20V; 1.5A; 0.5W; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 20V Drain current: 1.5A Power dissipation: 0.5W Case: SOT23 Gate-source voltage: ±12V On-state resistance: 0.25Ω Mounting: SMD Kind of channel: enhancement Technology: OptiMOS™ 2 Anzahl je Verpackung: 1 Stücke |
auf Bestellung 3317 Stücke: Lieferzeit 7-14 Tag (e) |
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BSS214NWH6327XTSA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 20V; 1.5A; 0.5W; SOT323 Type of transistor: N-MOSFET Technology: OptiMOS™ 2 Polarisation: unipolar Drain-source voltage: 20V Drain current: 1.5A Power dissipation: 0.5W Case: SOT323 Gate-source voltage: ±12V On-state resistance: 0.25Ω Mounting: SMD Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 1909 Stücke: Lieferzeit 7-14 Tag (e) |
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BSS215PH6327XTSA1 | INFINEON TECHNOLOGIES |
Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -20V; -1.5A; 0.5W; PG-SOT23 Type of transistor: P-MOSFET Technology: OptiMOS™ P2 Polarisation: unipolar Drain-source voltage: -20V Drain current: -1.5A Power dissipation: 0.5W Case: PG-SOT23 Gate-source voltage: ±12V On-state resistance: 0.15Ω Mounting: SMD Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 2824 Stücke: Lieferzeit 7-14 Tag (e) |
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BSS223PWH6327XTSA1 | INFINEON TECHNOLOGIES |
Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -20V; -0.39A; 0.25W; PG-SOT-323 Case: PG-SOT-323 Mounting: SMD Gate-source voltage: ±12V Kind of channel: enhancement Technology: OptiMOS™ P Type of transistor: P-MOSFET Polarisation: unipolar Drain current: -0.39A Drain-source voltage: -20V On-state resistance: 1.2Ω Power dissipation: 0.25W Anzahl je Verpackung: 1 Stücke |
auf Bestellung 1265 Stücke: Lieferzeit 7-14 Tag (e) |
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| BSS225H6327FTSA1 | INFINEON TECHNOLOGIES |
BSS225H6327FTSA1 SMD N channel transistors |
auf Bestellung 372 Stücke: Lieferzeit 7-14 Tag (e) |
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BSS306NH6327XTSA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 30V; 2.3A; 0.5W; SOT23 Mounting: SMD Kind of channel: enhancement Type of transistor: N-MOSFET Technology: OptiMOS™ 2 Case: SOT23 On-state resistance: 93mΩ Power dissipation: 0.5W Drain current: 2.3A Gate-source voltage: ±20V Drain-source voltage: 30V Polarisation: unipolar Anzahl je Verpackung: 1 Stücke |
auf Bestellung 10232 Stücke: Lieferzeit 7-14 Tag (e) |
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BSS308PEH6327XTSA1 | INFINEON TECHNOLOGIES |
Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -30V; -2A; 0.5W; PG-SOT23 Technology: OptiMOS™ P3 Type of transistor: P-MOSFET Drain-source voltage: -30V Drain current: -2A On-state resistance: 80mΩ Power dissipation: 0.5W Gate-source voltage: ±20V Polarisation: unipolar Case: PG-SOT23 Kind of channel: enhancement Mounting: SMD Anzahl je Verpackung: 1 Stücke |
auf Bestellung 32 Stücke: Lieferzeit 7-14 Tag (e) |
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BSS314PEH6327XTSA1 | INFINEON TECHNOLOGIES |
Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -30V; -1.5A; 0.5W; PG-SOT23 Technology: OptiMOS™ P3 Type of transistor: P-MOSFET Drain-source voltage: -30V Drain current: -1.5A On-state resistance: 0.14Ω Power dissipation: 0.5W Gate-source voltage: ±20V Polarisation: unipolar Case: PG-SOT23 Kind of channel: enhancement Mounting: SMD Anzahl je Verpackung: 1 Stücke |
auf Bestellung 4669 Stücke: Lieferzeit 7-14 Tag (e) |
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BSS315PH6327XTSA1 | INFINEON TECHNOLOGIES |
Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -30V; -1.5A; 0.5W; PG-SOT23 Type of transistor: P-MOSFET Technology: OptiMOS™ P2 Polarisation: unipolar Drain-source voltage: -30V Drain current: -1.5A Power dissipation: 0.5W Case: PG-SOT23 Gate-source voltage: ±20V On-state resistance: 0.15Ω Mounting: SMD Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 5889 Stücke: Lieferzeit 7-14 Tag (e) |
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BSS316NH6327XTSA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 30V; 1.4A; 0.5W; SOT23 Mounting: SMD Polarisation: unipolar Kind of channel: enhancement Type of transistor: N-MOSFET Technology: OptiMOS™ 2 Case: SOT23 Drain-source voltage: 30V Drain current: 1.4A On-state resistance: 0.28Ω Power dissipation: 0.5W Gate-source voltage: ±20V Anzahl je Verpackung: 1 Stücke |
auf Bestellung 19415 Stücke: Lieferzeit 7-14 Tag (e) |
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BSS606NH6327XTSA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 60V; 3.2A; 1W; PG-SOT89 Type of transistor: N-MOSFET Technology: OptiMOS™ 3 Polarisation: unipolar Drain-source voltage: 60V Drain current: 3.2A Power dissipation: 1W Case: PG-SOT89 Gate-source voltage: ±20V On-state resistance: 90mΩ Mounting: SMD Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 650 Stücke: Lieferzeit 7-14 Tag (e) |
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| BSS670S2LH6327XTSA1 | INFINEON TECHNOLOGIES |
BSS670S2LH6327XTSA SMD N channel transistors |
auf Bestellung 2083 Stücke: Lieferzeit 7-14 Tag (e) |
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| BSS7728NH6327XTSA2 | INFINEON TECHNOLOGIES |
BSS7728NH6327XTSA2 SMD N channel transistors |
auf Bestellung 2949 Stücke: Lieferzeit 7-14 Tag (e) |
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BSS806NEH6327XTSA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 20V; 2.3A; 0.5W; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Power dissipation: 0.5W Case: SOT23 Mounting: SMD Technology: OptiMOS™ 2 Gate-source voltage: ±8V On-state resistance: 82mΩ Drain current: 2.3A Drain-source voltage: 20V Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 5941 Stücke: Lieferzeit 7-14 Tag (e) |
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BSS806NH6327XTSA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 20V; 2.3A; 0.5W; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Power dissipation: 0.5W Case: SOT23 Mounting: SMD Technology: OptiMOS™ 2 Gate-source voltage: ±8V On-state resistance: 82mΩ Drain current: 2.3A Drain-source voltage: 20V Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 6303 Stücke: Lieferzeit 7-14 Tag (e) |
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BSS816NWH6327XTSA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 20V; 1.4A; 0.5W; SOT323 Type of transistor: N-MOSFET Technology: OptiMOS™ 2 Polarisation: unipolar Drain-source voltage: 20V Drain current: 1.4A Power dissipation: 0.5W Case: SOT323 Gate-source voltage: ±8V On-state resistance: 0.24Ω Mounting: SMD Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 3079 Stücke: Lieferzeit 7-14 Tag (e) |
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BSS83PH6327XTSA1 | INFINEON TECHNOLOGIES |
Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -60V; -0.33A; 0.36W; PG-SOT23 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -60V Drain current: -330mA Power dissipation: 0.36W Case: PG-SOT23 Gate-source voltage: ±20V On-state resistance: 2Ω Mounting: SMD Kind of package: reel Kind of channel: enhancement Technology: SIPMOS™ Anzahl je Verpackung: 1 Stücke |
auf Bestellung 25102 Stücke: Lieferzeit 7-14 Tag (e) |
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BSS84PH6327XTSA2 | INFINEON TECHNOLOGIES |
Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -60V; -0.14A; 0.36W; PG-SOT23 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -60V Drain current: -140mA Power dissipation: 0.36W Case: PG-SOT23 Gate-source voltage: ±20V On-state resistance: 8Ω Mounting: SMD Kind of package: reel Kind of channel: enhancement Gate charge: 0.37nC Technology: SIPMOS™ Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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BSS84PWH6327XTSA1 | INFINEON TECHNOLOGIES |
Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -60V; -0.15A; 0.3W; PG-SOT-323 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -60V Drain current: -0.15A Power dissipation: 0.3W Case: PG-SOT-323 Gate-source voltage: ±20V On-state resistance: 8Ω Mounting: SMD Kind of package: reel Kind of channel: enhancement Gate charge: 0.37nC Technology: SIPMOS™ Anzahl je Verpackung: 1 Stücke |
auf Bestellung 4377 Stücke: Lieferzeit 7-14 Tag (e) |
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| BSS87H6327FTSA1 | INFINEON TECHNOLOGIES |
BSS87H6327FTSA1 SMD N channel transistors |
auf Bestellung 653 Stücke: Lieferzeit 7-14 Tag (e) |
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| BSZ018NE2LSATMA1 | INFINEON TECHNOLOGIES |
BSZ018NE2LSATMA1 SMD N channel transistors |
auf Bestellung 4970 Stücke: Lieferzeit 7-14 Tag (e) |
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BSZ040N04LSGATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 40V; 40A; 69W; PG-TSDSON-8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 40A Power dissipation: 69W Case: PG-TSDSON-8 Gate-source voltage: ±20V On-state resistance: 4mΩ Mounting: SMD Kind of channel: enhancement Technology: OptiMOS™ 3 Anzahl je Verpackung: 1 Stücke |
auf Bestellung 1938 Stücke: Lieferzeit 7-14 Tag (e) |
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| BSZ097N04LSGATMA1 | INFINEON TECHNOLOGIES |
BSZ097N04LSGATMA1 SMD N channel transistors |
auf Bestellung 4913 Stücke: Lieferzeit 7-14 Tag (e) |
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BSZ440N10NS3GATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 100V; 18A; 29W; PG-TSDSON-8 Type of transistor: N-MOSFET Technology: OptiMOS™ 3 Polarisation: unipolar Drain-source voltage: 100V Drain current: 18A Power dissipation: 29W Case: PG-TSDSON-8 Gate-source voltage: ±20V On-state resistance: 44mΩ Mounting: SMD Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 5899 Stücke: Lieferzeit 7-14 Tag (e) |
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| BSZ900N15NS3GATMA1 | INFINEON TECHNOLOGIES |
BSZ900N15NS3GATMA1 SMD N channel transistors |
auf Bestellung 3006 Stücke: Lieferzeit 7-14 Tag (e) |
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| BSZ900N20NS3GATMA1 | INFINEON TECHNOLOGIES |
BSZ900N20NS3GATMA1 SMD N channel transistors |
auf Bestellung 868 Stücke: Lieferzeit 7-14 Tag (e) |
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BTN8962TAAUMA1 | INFINEON TECHNOLOGIES |
Category: Motor and PWM driversDescription: IC: driver; MOSFET half-bridge; IMC,motor controller; PG-TO263-7 Type of integrated circuit: driver Output current: -27...30A Case: PG-TO263-7 Mounting: SMD Kind of package: reel; tape Operating temperature: -40...150°C Number of channels: 1 On-state resistance: 14.2mΩ Operating voltage: 5.5...40V DC Application: DC motors Topology: MOSFET half-bridge Technology: NovalithIC™ Kind of integrated circuit: IMC; motor controller Anzahl je Verpackung: 1 Stücke |
auf Bestellung 586 Stücke: Lieferzeit 7-14 Tag (e) |
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BTS134D | INFINEON TECHNOLOGIES |
Category: Power switches - integrated circuitsDescription: IC: power switch; low-side; 3.5A; Ch: 1; N-Channel; SMD; TO252-3 Type of integrated circuit: power switch Kind of integrated circuit: low-side Output current: 3.5A Number of channels: 1 Kind of output: N-Channel Mounting: SMD Case: TO252-3 On-state resistance: 35mΩ Technology: HITFET® Output voltage: 42V Anzahl je Verpackung: 1 Stücke |
auf Bestellung 71 Stücke: Lieferzeit 7-14 Tag (e) |
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| BTS142D | INFINEON TECHNOLOGIES | BTS142D Power switches - integrated circuits |
auf Bestellung 841 Stücke: Lieferzeit 7-14 Tag (e) |
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BTS282ZE3180AATMA2 | INFINEON TECHNOLOGIES |
Category: Power switches - integrated circuitsDescription: IC: power switch; low-side; 36A; Ch: 1; N-Channel; SMD; PG-TO263-7-1 Type of integrated circuit: power switch Kind of integrated circuit: low-side Output current: 36A Number of channels: 1 Kind of output: N-Channel Mounting: SMD Case: PG-TO263-7-1 On-state resistance: 6.5mΩ Kind of package: reel; tape Operating temperature: -40...175°C Output voltage: 49V Technology: TEMPFET® Integrated circuit features: internal temperature sensor Power dissipation: 300W Anzahl je Verpackung: 1 Stücke |
auf Bestellung 77 Stücke: Lieferzeit 7-14 Tag (e) |
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BTS282ZE3230AKSA2 | INFINEON TECHNOLOGIES |
Category: Power switches - integrated circuitsDescription: IC: power switch; low-side; 36A; Ch: 1; N-Channel; THT; tube; 300W Type of integrated circuit: power switch Kind of integrated circuit: low-side Output current: 36A Number of channels: 1 Kind of output: N-Channel Mounting: THT Case: PG-TO220-7-12 On-state resistance: 6.5mΩ Kind of package: tube Operating temperature: -40...175°C Output voltage: 49V Technology: TEMPFET® Integrated circuit features: internal temperature sensor Power dissipation: 300W Anzahl je Verpackung: 1 Stücke |
auf Bestellung 46 Stücke: Lieferzeit 7-14 Tag (e) |
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BTS3035EJ | INFINEON TECHNOLOGIES |
Category: Power switches - integrated circuitsDescription: IC: power switch; low-side; 5A; Ch: 1; N-Channel; SMD; SO8-EP Type of integrated circuit: power switch Kind of integrated circuit: low-side Output current: 5A Number of channels: 1 Kind of output: N-Channel Mounting: SMD Case: SO8-EP On-state resistance: 70mΩ Operating temperature: -40...150°C Output voltage: 40V Technology: HITFET® Turn-off time: 210µs Turn-on time: 115µs Anzahl je Verpackung: 1 Stücke |
auf Bestellung 2995 Stücke: Lieferzeit 7-14 Tag (e) |
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BTS3035TF | INFINEON TECHNOLOGIES |
Category: Power switches - integrated circuitsDescription: IC: power switch; low-side; 5A; Ch: 1; N-Channel; SMD; PG-TO252-3 Type of integrated circuit: power switch Kind of integrated circuit: low-side Output current: 5A Number of channels: 1 Kind of output: N-Channel Mounting: SMD Case: PG-TO252-3 On-state resistance: 70mΩ Operating temperature: -40...150°C Output voltage: 40V Technology: HITFET® Turn-off time: 210µs Turn-on time: 115µs Anzahl je Verpackung: 1 Stücke |
auf Bestellung 1082 Stücke: Lieferzeit 7-14 Tag (e) |
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BTS3050EJ | INFINEON TECHNOLOGIES |
Category: Power switches - integrated circuitsDescription: IC: power switch; low-side; 4A; Ch: 1; N-Channel; SMD; SO8-EP Type of integrated circuit: power switch Kind of integrated circuit: low-side Output current: 4A Number of channels: 1 Kind of output: N-Channel Mounting: SMD Case: SO8-EP On-state resistance: 0.1Ω Operating temperature: -40...150°C Output voltage: 40V Technology: HITFET® Turn-off time: 210µs Turn-on time: 115µs Anzahl je Verpackung: 1 Stücke |
auf Bestellung 2945 Stücke: Lieferzeit 7-14 Tag (e) |
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| BTS3110N | INFINEON TECHNOLOGIES | BTS3110N Power switches - integrated circuits |
auf Bestellung 2119 Stücke: Lieferzeit 7-14 Tag (e) |
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BTS3118N | INFINEON TECHNOLOGIES |
Category: Power switches - integrated circuitsDescription: IC: power switch; low-side; 2.17A; Ch: 1; N-Channel; SMD; SOT223-3 Type of integrated circuit: power switch Kind of integrated circuit: low-side Output current: 2.17A Number of channels: 1 Kind of output: N-Channel Mounting: SMD Case: SOT223-3 On-state resistance: 70mΩ Technology: HITFET® Output voltage: 42V Anzahl je Verpackung: 1 Stücke |
auf Bestellung 1908 Stücke: Lieferzeit 7-14 Tag (e) |
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BTS3405G | INFINEON TECHNOLOGIES |
Category: Power switches - integrated circuitsDescription: IC: power switch; low-side; 350mA; Ch: 2; N-Channel; SMD; HITFET® Type of integrated circuit: power switch Kind of integrated circuit: low-side Output current: 0.35A Number of channels: 2 Mounting: SMD Case: PG-DSO-8-25 On-state resistance: 0.35Ω Output voltage: 10V Technology: HITFET® Kind of output: N-Channel Anzahl je Verpackung: 1 Stücke |
auf Bestellung 2207 Stücke: Lieferzeit 7-14 Tag (e) |
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BTS3408GXUMA2 | INFINEON TECHNOLOGIES |
Category: Power switches - integrated circuitsDescription: IC: power switch; low-side; 550mA; Ch: 2; N-Channel; SMD; PG-DSO-8 Mounting: SMD Technology: HITFET® Kind of integrated circuit: low-side Kind of output: N-Channel Case: PG-DSO-8 Type of integrated circuit: power switch Operating temperature: -40...150°C Turn-on time: 2µs Turn-off time: 2µs On-state resistance: 0.48Ω Output current: 0.55A Power dissipation: 0.88W Number of channels: 2 Supply voltage: 4.5...60V DC Output voltage: 60V Anzahl je Verpackung: 1 Stücke |
auf Bestellung 1797 Stücke: Lieferzeit 7-14 Tag (e) |
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BTS3410GXUMA1 | INFINEON TECHNOLOGIES |
Category: Power switches - integrated circuitsDescription: IC: power switch; low-side; 1.3A; Ch: 2; N-Channel; SMD; PG-DSO-8 Case: PG-DSO-8 Type of integrated circuit: power switch Mounting: SMD Technology: HITFET® Kind of integrated circuit: low-side Kind of output: N-Channel On-state resistance: 0.2Ω Power dissipation: 0.8W Number of channels: 2 Output current: 1.3A Anzahl je Verpackung: 1 Stücke |
auf Bestellung 2424 Stücke: Lieferzeit 7-14 Tag (e) |
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| BTS3800SL | INFINEON TECHNOLOGIES | BTS3800SL Power switches - integrated circuits |
auf Bestellung 824 Stücke: Lieferzeit 7-14 Tag (e) |
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BTS4140N | INFINEON TECHNOLOGIES |
Category: Power switches - integrated circuitsDescription: IC: power switch; high-side; 0.2A; Ch: 1; N-Channel; SMD; SOT223-3 Type of integrated circuit: power switch Kind of integrated circuit: high-side Output current: 0.2A Mounting: SMD Number of channels: 1 Case: SOT223-3 Supply voltage: 4.9...60V DC On-state resistance: 1Ω Technology: Classic PROFET Kind of output: N-Channel Anzahl je Verpackung: 1 Stücke |
auf Bestellung 1614 Stücke: Lieferzeit 7-14 Tag (e) |
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BTS4141N | INFINEON TECHNOLOGIES |
Category: Power switches - integrated circuitsDescription: IC: power switch; high-side; 0.7A; Ch: 1; N-Channel; SMD Type of integrated circuit: power switch Kind of integrated circuit: high-side Output current: 0.7A Mounting: SMD Number of channels: 1 Case: PG-SOT223-4 On-state resistance: 0.175Ω Output voltage: 12...45V Technology: Classic PROFET Kind of output: N-Channel Anzahl je Verpackung: 1 Stücke |
auf Bestellung 3130 Stücke: Lieferzeit 7-14 Tag (e) |
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BTS4142N | INFINEON TECHNOLOGIES |
Category: Power switches - integrated circuitsDescription: IC: power switch; high-side; 1.4A; Ch: 1; N-Channel; SMD; SOT223-3 Type of integrated circuit: power switch Kind of integrated circuit: high-side Output current: 1.4A Mounting: SMD Number of channels: 1 Case: SOT223-3 Supply voltage: 12...45V DC On-state resistance: 0.15Ω Technology: Classic PROFET Kind of output: N-Channel Anzahl je Verpackung: 1 Stücke |
auf Bestellung 398 Stücke: Lieferzeit 7-14 Tag (e) |
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BTS428L2 | INFINEON TECHNOLOGIES |
Category: Power switches - integrated circuitsDescription: IC: power switch; high-side; 5.8A; Ch: 1; N-Channel; SMD; TO252 Type of integrated circuit: power switch Kind of integrated circuit: high-side Output current: 5.8A Mounting: SMD Number of channels: 1 Case: TO252 On-state resistance: 50mΩ Output voltage: 4.75...41V Technology: Classic PROFET; SIPMOS™ Kind of output: N-Channel Anzahl je Verpackung: 1 Stücke |
auf Bestellung 2284 Stücke: Lieferzeit 7-14 Tag (e) |
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BTS4300SGA | INFINEON TECHNOLOGIES |
Category: Power switches - integrated circuitsDescription: IC: power switch; high-side; 400mA; Ch: 1; N-Channel; SMD; SO8 Type of integrated circuit: power switch Kind of integrated circuit: high-side Output current: 0.4A Number of channels: 1 Kind of output: N-Channel Mounting: SMD Case: SO8 On-state resistance: 0.3Ω Supply voltage: 5...34V DC Technology: Classic PROFET Anzahl je Verpackung: 1 Stücke |
auf Bestellung 1949 Stücke: Lieferzeit 7-14 Tag (e) |
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BTS441RG | INFINEON TECHNOLOGIES |
Category: Power switches - integrated circuitsDescription: IC: power switch; high-side; 17A; Ch: 1; N-Channel; SMD; TO263-5 Type of integrated circuit: power switch Kind of integrated circuit: high-side Output current: 17A Number of channels: 1 Kind of output: N-Channel Mounting: SMD Case: TO263-5 On-state resistance: 15mΩ Output voltage: 4.75...43V Technology: Classic PROFET Anzahl je Verpackung: 1 Stücke |
auf Bestellung 840 Stücke: Lieferzeit 7-14 Tag (e) |
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| BSS123IXTSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 0.15A; Idm: 0.77A; 0.5W; SOT23
Case: SOT23
Mounting: SMD
Type of transistor: N-MOSFET
Technology: OptiMOS™
Gate charge: 0.63nC
Drain current: 0.15A
Power dissipation: 0.5W
Pulsed drain current: 0.77A
On-state resistance: 10Ω
Gate-source voltage: ±20V
Drain-source voltage: 100V
Polarisation: unipolar
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 0.15A; Idm: 0.77A; 0.5W; SOT23
Case: SOT23
Mounting: SMD
Type of transistor: N-MOSFET
Technology: OptiMOS™
Gate charge: 0.63nC
Drain current: 0.15A
Power dissipation: 0.5W
Pulsed drain current: 0.77A
On-state resistance: 10Ω
Gate-source voltage: ±20V
Drain-source voltage: 100V
Polarisation: unipolar
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 164 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 164+ | 0.43 EUR |
| 500+ | 0.14 EUR |
| 1000+ | 0.072 EUR |
| 1500+ | 0.047 EUR |
| BSS123NH6327XTSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 0.15A; Idm: 0.77A; 0.5W; SOT23
Case: SOT23
Mounting: SMD
Type of transistor: N-MOSFET
Technology: OptiMOS™
Gate charge: 0.6nC
Drain current: 0.15A
Power dissipation: 0.5W
Pulsed drain current: 0.77A
On-state resistance: 10Ω
Gate-source voltage: ±20V
Drain-source voltage: 100V
Polarisation: unipolar
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 0.15A; Idm: 0.77A; 0.5W; SOT23
Case: SOT23
Mounting: SMD
Type of transistor: N-MOSFET
Technology: OptiMOS™
Gate charge: 0.6nC
Drain current: 0.15A
Power dissipation: 0.5W
Pulsed drain current: 0.77A
On-state resistance: 10Ω
Gate-source voltage: ±20V
Drain-source voltage: 100V
Polarisation: unipolar
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 17566 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 556+ | 0.13 EUR |
| 715+ | 0.1 EUR |
| 758+ | 0.094 EUR |
| 985+ | 0.073 EUR |
| 1097+ | 0.065 EUR |
| 1194+ | 0.06 EUR |
| 1303+ | 0.055 EUR |
| BSS123NH6433XTMA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 0.15A; Idm: 0.77A; 0.5W; SOT23
Case: SOT23
Mounting: SMD
Type of transistor: N-MOSFET
Technology: OptiMOS™
Gate charge: 0.6nC
Drain current: 0.15A
Power dissipation: 0.5W
Pulsed drain current: 0.77A
On-state resistance: 10Ω
Gate-source voltage: ±20V
Drain-source voltage: 100V
Polarisation: unipolar
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 0.15A; Idm: 0.77A; 0.5W; SOT23
Case: SOT23
Mounting: SMD
Type of transistor: N-MOSFET
Technology: OptiMOS™
Gate charge: 0.6nC
Drain current: 0.15A
Power dissipation: 0.5W
Pulsed drain current: 0.77A
On-state resistance: 10Ω
Gate-source voltage: ±20V
Drain-source voltage: 100V
Polarisation: unipolar
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 10157 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 228+ | 0.31 EUR |
| 329+ | 0.22 EUR |
| 404+ | 0.18 EUR |
| 640+ | 0.11 EUR |
| 763+ | 0.094 EUR |
| 1062+ | 0.067 EUR |
| 1185+ | 0.06 EUR |
| BSS126H6327XTSA2 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 0.021A; 0.5W; SOT23
Case: SOT23
Mounting: SMD
Type of transistor: N-MOSFET
Technology: SIPMOS™
Drain current: 21mA
Power dissipation: 0.5W
On-state resistance: 700Ω
Gate-source voltage: ±20V
Drain-source voltage: 600V
Polarisation: unipolar
Kind of channel: depletion
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 0.021A; 0.5W; SOT23
Case: SOT23
Mounting: SMD
Type of transistor: N-MOSFET
Technology: SIPMOS™
Drain current: 21mA
Power dissipation: 0.5W
On-state resistance: 700Ω
Gate-source voltage: ±20V
Drain-source voltage: 600V
Polarisation: unipolar
Kind of channel: depletion
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2446 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 120+ | 0.6 EUR |
| 150+ | 0.48 EUR |
| 172+ | 0.42 EUR |
| 278+ | 0.26 EUR |
| 500+ | 0.24 EUR |
| BSS127H6327XTSA2 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 0.021A; 0.5W; SOT23
Case: SOT23
Mounting: SMD
Type of transistor: N-MOSFET
Technology: SIPMOS™
Drain current: 21mA
Power dissipation: 0.5W
On-state resistance: 500Ω
Gate-source voltage: ±20V
Drain-source voltage: 600V
Polarisation: unipolar
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 0.021A; 0.5W; SOT23
Case: SOT23
Mounting: SMD
Type of transistor: N-MOSFET
Technology: SIPMOS™
Drain current: 21mA
Power dissipation: 0.5W
On-state resistance: 500Ω
Gate-source voltage: ±20V
Drain-source voltage: 600V
Polarisation: unipolar
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 3336 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 167+ | 0.43 EUR |
| 230+ | 0.31 EUR |
| 281+ | 0.25 EUR |
| 332+ | 0.22 EUR |
| 391+ | 0.18 EUR |
| 562+ | 0.13 EUR |
| 1000+ | 0.11 EUR |
| BSS131H6327XTSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 240V; 0.1A; 0.36W; SOT23
Type of transistor: N-MOSFET
Technology: SIPMOS™
Polarisation: unipolar
Drain-source voltage: 240V
Drain current: 0.1A
Power dissipation: 0.36W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 14Ω
Mounting: SMD
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 240V; 0.1A; 0.36W; SOT23
Type of transistor: N-MOSFET
Technology: SIPMOS™
Polarisation: unipolar
Drain-source voltage: 240V
Drain current: 0.1A
Power dissipation: 0.36W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 14Ω
Mounting: SMD
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 3788 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 264+ | 0.27 EUR |
| 447+ | 0.16 EUR |
| 577+ | 0.12 EUR |
| 682+ | 0.1 EUR |
| 789+ | 0.091 EUR |
| 921+ | 0.078 EUR |
| 1009+ | 0.071 EUR |
| BSS138NH6327XTSA2 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.23A; 0.36W; SOT23
Type of transistor: N-MOSFET
Technology: SIPMOS™
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.23A
Power dissipation: 0.36W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 3.5Ω
Mounting: SMD
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.23A; 0.36W; SOT23
Type of transistor: N-MOSFET
Technology: SIPMOS™
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.23A
Power dissipation: 0.36W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 3.5Ω
Mounting: SMD
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 14853 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 313+ | 0.23 EUR |
| 410+ | 0.17 EUR |
| 491+ | 0.15 EUR |
| 763+ | 0.094 EUR |
| 905+ | 0.079 EUR |
| 1244+ | 0.057 EUR |
| 1374+ | 0.052 EUR |
| BSS138WH6327XTSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.28A; 0.5W; SOT323
Type of transistor: N-MOSFET
Technology: SIPMOS™
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.28A
Power dissipation: 0.5W
Case: SOT323
Gate-source voltage: ±20V
On-state resistance: 3.5Ω
Mounting: SMD
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.28A; 0.5W; SOT323
Type of transistor: N-MOSFET
Technology: SIPMOS™
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.28A
Power dissipation: 0.5W
Case: SOT323
Gate-source voltage: ±20V
On-state resistance: 3.5Ω
Mounting: SMD
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 668 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 417+ | 0.17 EUR |
| 668+ | 0.11 EUR |
| 1000+ | 0.072 EUR |
| BSS139H6327XTSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 0.1A; 0.36W; SOT23
Type of transistor: N-MOSFET
Technology: SIPMOS™
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 0.1A
Power dissipation: 0.36W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 30Ω
Mounting: SMD
Kind of channel: depletion
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 0.1A; 0.36W; SOT23
Type of transistor: N-MOSFET
Technology: SIPMOS™
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 0.1A
Power dissipation: 0.36W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 30Ω
Mounting: SMD
Kind of channel: depletion
Anzahl je Verpackung: 1 Stücke
auf Bestellung 7469 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 148+ | 0.49 EUR |
| 228+ | 0.31 EUR |
| 341+ | 0.21 EUR |
| 394+ | 0.18 EUR |
| 500+ | 0.17 EUR |
| BSS159NH6327XTSA2 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.23A; 0.36W; SOT23
Type of transistor: N-MOSFET
Technology: SIPMOS™
Mounting: SMD
Polarisation: unipolar
Drain current: 0.23A
Power dissipation: 0.36W
On-state resistance: 8Ω
Gate-source voltage: ±20V
Drain-source voltage: 60V
Kind of channel: depletion
Case: SOT23
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.23A; 0.36W; SOT23
Type of transistor: N-MOSFET
Technology: SIPMOS™
Mounting: SMD
Polarisation: unipolar
Drain current: 0.23A
Power dissipation: 0.36W
On-state resistance: 8Ω
Gate-source voltage: ±20V
Drain-source voltage: 60V
Kind of channel: depletion
Case: SOT23
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1043 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 139+ | 0.51 EUR |
| 202+ | 0.35 EUR |
| 257+ | 0.28 EUR |
| 309+ | 0.23 EUR |
| 368+ | 0.19 EUR |
| 447+ | 0.16 EUR |
| BSS169H6327XTSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 0.17A; 0.36W; SOT23
Case: SOT23
Mounting: SMD
Technology: SIPMOS™
Polarisation: unipolar
Drain current: 0.17A
Power dissipation: 0.36W
On-state resistance: 12Ω
Gate-source voltage: ±20V
Drain-source voltage: 100V
Kind of channel: depletion
Type of transistor: N-MOSFET
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 0.17A; 0.36W; SOT23
Case: SOT23
Mounting: SMD
Technology: SIPMOS™
Polarisation: unipolar
Drain current: 0.17A
Power dissipation: 0.36W
On-state resistance: 12Ω
Gate-source voltage: ±20V
Drain-source voltage: 100V
Kind of channel: depletion
Type of transistor: N-MOSFET
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2630 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 139+ | 0.51 EUR |
| 197+ | 0.36 EUR |
| 260+ | 0.28 EUR |
| 295+ | 0.24 EUR |
| 350+ | 0.2 EUR |
| 500+ | 0.18 EUR |
| 1000+ | 0.16 EUR |
| BSS192PH6327FTSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -250V; -0.19A; 1W; SOT89
Type of transistor: P-MOSFET
Technology: SIPMOS™
Polarisation: unipolar
Drain-source voltage: -250V
Drain current: -190mA
Power dissipation: 1W
Case: SOT89
Gate-source voltage: ±20V
On-state resistance: 12Ω
Mounting: SMD
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -250V; -0.19A; 1W; SOT89
Type of transistor: P-MOSFET
Technology: SIPMOS™
Polarisation: unipolar
Drain-source voltage: -250V
Drain current: -190mA
Power dissipation: 1W
Case: SOT89
Gate-source voltage: ±20V
On-state resistance: 12Ω
Mounting: SMD
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BSS205NH6327XTSA1 |
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Hersteller: INFINEON TECHNOLOGIES
BSS205NH6327XTSA1 SMD N channel transistors
BSS205NH6327XTSA1 SMD N channel transistors
auf Bestellung 5989 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 172+ | 0.42 EUR |
| 910+ | 0.079 EUR |
| 962+ | 0.074 EUR |
| BSS209PWH6327XTSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -0.63A; 0.3W; PG-SOT-323
Case: PG-SOT-323
Mounting: SMD
Gate-source voltage: ±12V
Kind of channel: enhancement
Technology: OptiMOS™ P
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain current: -630mA
Drain-source voltage: -20V
On-state resistance: 0.55Ω
Power dissipation: 0.3W
Anzahl je Verpackung: 1 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -0.63A; 0.3W; PG-SOT-323
Case: PG-SOT-323
Mounting: SMD
Gate-source voltage: ±12V
Kind of channel: enhancement
Technology: OptiMOS™ P
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain current: -630mA
Drain-source voltage: -20V
On-state resistance: 0.55Ω
Power dissipation: 0.3W
Anzahl je Verpackung: 1 Stücke
auf Bestellung 3649 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 417+ | 0.17 EUR |
| 544+ | 0.13 EUR |
| 745+ | 0.096 EUR |
| 848+ | 0.084 EUR |
| 1114+ | 0.064 EUR |
| 1177+ | 0.061 EUR |
| BSS214NH6327XTSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 1.5A; 0.5W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 1.5A
Power dissipation: 0.5W
Case: SOT23
Gate-source voltage: ±12V
On-state resistance: 0.25Ω
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 2
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 1.5A; 0.5W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 1.5A
Power dissipation: 0.5W
Case: SOT23
Gate-source voltage: ±12V
On-state resistance: 0.25Ω
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 2
Anzahl je Verpackung: 1 Stücke
auf Bestellung 3317 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 264+ | 0.27 EUR |
| 394+ | 0.18 EUR |
| 569+ | 0.13 EUR |
| 661+ | 0.11 EUR |
| 797+ | 0.09 EUR |
| 908+ | 0.079 EUR |
| 1025+ | 0.07 EUR |
| BSS214NWH6327XTSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 1.5A; 0.5W; SOT323
Type of transistor: N-MOSFET
Technology: OptiMOS™ 2
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 1.5A
Power dissipation: 0.5W
Case: SOT323
Gate-source voltage: ±12V
On-state resistance: 0.25Ω
Mounting: SMD
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 1.5A; 0.5W; SOT323
Type of transistor: N-MOSFET
Technology: OptiMOS™ 2
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 1.5A
Power dissipation: 0.5W
Case: SOT323
Gate-source voltage: ±12V
On-state resistance: 0.25Ω
Mounting: SMD
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1909 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 417+ | 0.17 EUR |
| 582+ | 0.12 EUR |
| 879+ | 0.081 EUR |
| 1013+ | 0.071 EUR |
| 1109+ | 0.064 EUR |
| 1200+ | 0.06 EUR |
| 3000+ | 0.054 EUR |
| BSS215PH6327XTSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -1.5A; 0.5W; PG-SOT23
Type of transistor: P-MOSFET
Technology: OptiMOS™ P2
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -1.5A
Power dissipation: 0.5W
Case: PG-SOT23
Gate-source voltage: ±12V
On-state resistance: 0.15Ω
Mounting: SMD
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -1.5A; 0.5W; PG-SOT23
Type of transistor: P-MOSFET
Technology: OptiMOS™ P2
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -1.5A
Power dissipation: 0.5W
Case: PG-SOT23
Gate-source voltage: ±12V
On-state resistance: 0.15Ω
Mounting: SMD
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2824 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 167+ | 0.43 EUR |
| 205+ | 0.35 EUR |
| 237+ | 0.3 EUR |
| 350+ | 0.2 EUR |
| 414+ | 0.17 EUR |
| 596+ | 0.12 EUR |
| 1000+ | 0.11 EUR |
| BSS223PWH6327XTSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -0.39A; 0.25W; PG-SOT-323
Case: PG-SOT-323
Mounting: SMD
Gate-source voltage: ±12V
Kind of channel: enhancement
Technology: OptiMOS™ P
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain current: -0.39A
Drain-source voltage: -20V
On-state resistance: 1.2Ω
Power dissipation: 0.25W
Anzahl je Verpackung: 1 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -0.39A; 0.25W; PG-SOT-323
Case: PG-SOT-323
Mounting: SMD
Gate-source voltage: ±12V
Kind of channel: enhancement
Technology: OptiMOS™ P
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain current: -0.39A
Drain-source voltage: -20V
On-state resistance: 1.2Ω
Power dissipation: 0.25W
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1265 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 295+ | 0.24 EUR |
| 472+ | 0.15 EUR |
| 734+ | 0.098 EUR |
| 890+ | 0.08 EUR |
| 1053+ | 0.068 EUR |
| BSS225H6327FTSA1 |
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Hersteller: INFINEON TECHNOLOGIES
BSS225H6327FTSA1 SMD N channel transistors
BSS225H6327FTSA1 SMD N channel transistors
auf Bestellung 372 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 159+ | 0.45 EUR |
| 250+ | 0.29 EUR |
| 257+ | 0.28 EUR |
| 271+ | 0.26 EUR |
| BSS306NH6327XTSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 2.3A; 0.5W; SOT23
Mounting: SMD
Kind of channel: enhancement
Type of transistor: N-MOSFET
Technology: OptiMOS™ 2
Case: SOT23
On-state resistance: 93mΩ
Power dissipation: 0.5W
Drain current: 2.3A
Gate-source voltage: ±20V
Drain-source voltage: 30V
Polarisation: unipolar
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 2.3A; 0.5W; SOT23
Mounting: SMD
Kind of channel: enhancement
Type of transistor: N-MOSFET
Technology: OptiMOS™ 2
Case: SOT23
On-state resistance: 93mΩ
Power dissipation: 0.5W
Drain current: 2.3A
Gate-source voltage: ±20V
Drain-source voltage: 30V
Polarisation: unipolar
Anzahl je Verpackung: 1 Stücke
auf Bestellung 10232 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 193+ | 0.37 EUR |
| 291+ | 0.25 EUR |
| 414+ | 0.17 EUR |
| 477+ | 0.15 EUR |
| 575+ | 0.12 EUR |
| 650+ | 0.11 EUR |
| 1000+ | 0.097 EUR |
| BSS308PEH6327XTSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -2A; 0.5W; PG-SOT23
Technology: OptiMOS™ P3
Type of transistor: P-MOSFET
Drain-source voltage: -30V
Drain current: -2A
On-state resistance: 80mΩ
Power dissipation: 0.5W
Gate-source voltage: ±20V
Polarisation: unipolar
Case: PG-SOT23
Kind of channel: enhancement
Mounting: SMD
Anzahl je Verpackung: 1 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -2A; 0.5W; PG-SOT23
Technology: OptiMOS™ P3
Type of transistor: P-MOSFET
Drain-source voltage: -30V
Drain current: -2A
On-state resistance: 80mΩ
Power dissipation: 0.5W
Gate-source voltage: ±20V
Polarisation: unipolar
Case: PG-SOT23
Kind of channel: enhancement
Mounting: SMD
Anzahl je Verpackung: 1 Stücke
auf Bestellung 32 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 32+ | 2.23 EUR |
| 50+ | 1.43 EUR |
| 100+ | 0.72 EUR |
| 250+ | 0.29 EUR |
| 500+ | 0.14 EUR |
| 1000+ | 0.12 EUR |
| BSS314PEH6327XTSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -1.5A; 0.5W; PG-SOT23
Technology: OptiMOS™ P3
Type of transistor: P-MOSFET
Drain-source voltage: -30V
Drain current: -1.5A
On-state resistance: 0.14Ω
Power dissipation: 0.5W
Gate-source voltage: ±20V
Polarisation: unipolar
Case: PG-SOT23
Kind of channel: enhancement
Mounting: SMD
Anzahl je Verpackung: 1 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -1.5A; 0.5W; PG-SOT23
Technology: OptiMOS™ P3
Type of transistor: P-MOSFET
Drain-source voltage: -30V
Drain current: -1.5A
On-state resistance: 0.14Ω
Power dissipation: 0.5W
Gate-source voltage: ±20V
Polarisation: unipolar
Case: PG-SOT23
Kind of channel: enhancement
Mounting: SMD
Anzahl je Verpackung: 1 Stücke
auf Bestellung 4669 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 358+ | 0.2 EUR |
| 459+ | 0.16 EUR |
| 593+ | 0.12 EUR |
| 659+ | 0.11 EUR |
| 828+ | 0.086 EUR |
| 1000+ | 0.079 EUR |
| 3000+ | 0.07 EUR |
| BSS315PH6327XTSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -1.5A; 0.5W; PG-SOT23
Type of transistor: P-MOSFET
Technology: OptiMOS™ P2
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -1.5A
Power dissipation: 0.5W
Case: PG-SOT23
Gate-source voltage: ±20V
On-state resistance: 0.15Ω
Mounting: SMD
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -1.5A; 0.5W; PG-SOT23
Type of transistor: P-MOSFET
Technology: OptiMOS™ P2
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -1.5A
Power dissipation: 0.5W
Case: PG-SOT23
Gate-source voltage: ±20V
On-state resistance: 0.15Ω
Mounting: SMD
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 5889 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 173+ | 0.41 EUR |
| 214+ | 0.33 EUR |
| 248+ | 0.29 EUR |
| 428+ | 0.17 EUR |
| 610+ | 0.12 EUR |
| 1000+ | 0.1 EUR |
| 3000+ | 0.084 EUR |
| BSS316NH6327XTSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 1.4A; 0.5W; SOT23
Mounting: SMD
Polarisation: unipolar
Kind of channel: enhancement
Type of transistor: N-MOSFET
Technology: OptiMOS™ 2
Case: SOT23
Drain-source voltage: 30V
Drain current: 1.4A
On-state resistance: 0.28Ω
Power dissipation: 0.5W
Gate-source voltage: ±20V
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 1.4A; 0.5W; SOT23
Mounting: SMD
Polarisation: unipolar
Kind of channel: enhancement
Type of transistor: N-MOSFET
Technology: OptiMOS™ 2
Case: SOT23
Drain-source voltage: 30V
Drain current: 1.4A
On-state resistance: 0.28Ω
Power dissipation: 0.5W
Gate-source voltage: ±20V
Anzahl je Verpackung: 1 Stücke
auf Bestellung 19415 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 455+ | 0.16 EUR |
| 715+ | 0.1 EUR |
| 930+ | 0.077 EUR |
| 1038+ | 0.069 EUR |
| 1188+ | 0.06 EUR |
| 1313+ | 0.054 EUR |
| 1437+ | 0.05 EUR |
| BSS606NH6327XTSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 3.2A; 1W; PG-SOT89
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 3.2A
Power dissipation: 1W
Case: PG-SOT89
Gate-source voltage: ±20V
On-state resistance: 90mΩ
Mounting: SMD
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 3.2A; 1W; PG-SOT89
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 3.2A
Power dissipation: 1W
Case: PG-SOT89
Gate-source voltage: ±20V
On-state resistance: 90mΩ
Mounting: SMD
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 650 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 107+ | 0.67 EUR |
| 138+ | 0.52 EUR |
| 194+ | 0.37 EUR |
| 227+ | 0.32 EUR |
| 264+ | 0.27 EUR |
| 500+ | 0.23 EUR |
| 1000+ | 0.2 EUR |
| BSS670S2LH6327XTSA1 |
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Hersteller: INFINEON TECHNOLOGIES
BSS670S2LH6327XTSA SMD N channel transistors
BSS670S2LH6327XTSA SMD N channel transistors
auf Bestellung 2083 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 278+ | 0.26 EUR |
| 1053+ | 0.068 EUR |
| 1114+ | 0.064 EUR |
| BSS7728NH6327XTSA2 |
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Hersteller: INFINEON TECHNOLOGIES
BSS7728NH6327XTSA2 SMD N channel transistors
BSS7728NH6327XTSA2 SMD N channel transistors
auf Bestellung 2949 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 439+ | 0.16 EUR |
| 933+ | 0.077 EUR |
| 987+ | 0.073 EUR |
| BSS806NEH6327XTSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 2.3A; 0.5W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 0.5W
Case: SOT23
Mounting: SMD
Technology: OptiMOS™ 2
Gate-source voltage: ±8V
On-state resistance: 82mΩ
Drain current: 2.3A
Drain-source voltage: 20V
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 2.3A; 0.5W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 0.5W
Case: SOT23
Mounting: SMD
Technology: OptiMOS™ 2
Gate-source voltage: ±8V
On-state resistance: 82mΩ
Drain current: 2.3A
Drain-source voltage: 20V
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 5941 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 228+ | 0.31 EUR |
| 353+ | 0.2 EUR |
| 414+ | 0.17 EUR |
| 573+ | 0.12 EUR |
| 646+ | 0.11 EUR |
| 812+ | 0.088 EUR |
| 1000+ | 0.082 EUR |
| BSS806NH6327XTSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 2.3A; 0.5W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 0.5W
Case: SOT23
Mounting: SMD
Technology: OptiMOS™ 2
Gate-source voltage: ±8V
On-state resistance: 82mΩ
Drain current: 2.3A
Drain-source voltage: 20V
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 2.3A; 0.5W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 0.5W
Case: SOT23
Mounting: SMD
Technology: OptiMOS™ 2
Gate-source voltage: ±8V
On-state resistance: 82mΩ
Drain current: 2.3A
Drain-source voltage: 20V
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 6303 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 193+ | 0.37 EUR |
| 293+ | 0.24 EUR |
| 419+ | 0.17 EUR |
| 486+ | 0.15 EUR |
| 665+ | 0.11 EUR |
| 1000+ | 0.095 EUR |
| 3000+ | 0.079 EUR |
| BSS816NWH6327XTSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 1.4A; 0.5W; SOT323
Type of transistor: N-MOSFET
Technology: OptiMOS™ 2
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 1.4A
Power dissipation: 0.5W
Case: SOT323
Gate-source voltage: ±8V
On-state resistance: 0.24Ω
Mounting: SMD
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 1.4A; 0.5W; SOT323
Type of transistor: N-MOSFET
Technology: OptiMOS™ 2
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 1.4A
Power dissipation: 0.5W
Case: SOT323
Gate-source voltage: ±8V
On-state resistance: 0.24Ω
Mounting: SMD
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 3079 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 334+ | 0.21 EUR |
| 496+ | 0.14 EUR |
| 642+ | 0.11 EUR |
| 722+ | 0.099 EUR |
| 860+ | 0.083 EUR |
| 987+ | 0.073 EUR |
| 1153+ | 0.062 EUR |
| BSS83PH6327XTSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -0.33A; 0.36W; PG-SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -330mA
Power dissipation: 0.36W
Case: PG-SOT23
Gate-source voltage: ±20V
On-state resistance: 2Ω
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Technology: SIPMOS™
Anzahl je Verpackung: 1 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -0.33A; 0.36W; PG-SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -330mA
Power dissipation: 0.36W
Case: PG-SOT23
Gate-source voltage: ±20V
On-state resistance: 2Ω
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Technology: SIPMOS™
Anzahl je Verpackung: 1 Stücke
auf Bestellung 25102 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 173+ | 0.41 EUR |
| 236+ | 0.3 EUR |
| 345+ | 0.21 EUR |
| 410+ | 0.17 EUR |
| 506+ | 0.14 EUR |
| 596+ | 0.12 EUR |
| 1000+ | 0.1 EUR |
| BSS84PH6327XTSA2 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -0.14A; 0.36W; PG-SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -140mA
Power dissipation: 0.36W
Case: PG-SOT23
Gate-source voltage: ±20V
On-state resistance: 8Ω
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Gate charge: 0.37nC
Technology: SIPMOS™
Anzahl je Verpackung: 1 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -0.14A; 0.36W; PG-SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -140mA
Power dissipation: 0.36W
Case: PG-SOT23
Gate-source voltage: ±20V
On-state resistance: 8Ω
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Gate charge: 0.37nC
Technology: SIPMOS™
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BSS84PWH6327XTSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -0.15A; 0.3W; PG-SOT-323
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -0.15A
Power dissipation: 0.3W
Case: PG-SOT-323
Gate-source voltage: ±20V
On-state resistance: 8Ω
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Gate charge: 0.37nC
Technology: SIPMOS™
Anzahl je Verpackung: 1 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -0.15A; 0.3W; PG-SOT-323
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -0.15A
Power dissipation: 0.3W
Case: PG-SOT-323
Gate-source voltage: ±20V
On-state resistance: 8Ω
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Gate charge: 0.37nC
Technology: SIPMOS™
Anzahl je Verpackung: 1 Stücke
auf Bestellung 4377 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 455+ | 0.16 EUR |
| 725+ | 0.099 EUR |
| 977+ | 0.073 EUR |
| 1092+ | 0.065 EUR |
| 1370+ | 0.052 EUR |
| 1484+ | 0.048 EUR |
| 3000+ | 0.043 EUR |
| BSS87H6327FTSA1 |
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Hersteller: INFINEON TECHNOLOGIES
BSS87H6327FTSA1 SMD N channel transistors
BSS87H6327FTSA1 SMD N channel transistors
auf Bestellung 653 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 140+ | 0.51 EUR |
| 265+ | 0.27 EUR |
| 280+ | 0.26 EUR |
| 500+ | 0.25 EUR |
| BSZ018NE2LSATMA1 |
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Hersteller: INFINEON TECHNOLOGIES
BSZ018NE2LSATMA1 SMD N channel transistors
BSZ018NE2LSATMA1 SMD N channel transistors
auf Bestellung 4970 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 74+ | 0.97 EUR |
| 75+ | 0.96 EUR |
| 80+ | 0.9 EUR |
| 500+ | 0.86 EUR |
| BSZ040N04LSGATMA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 40A; 69W; PG-TSDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 40A
Power dissipation: 69W
Case: PG-TSDSON-8
Gate-source voltage: ±20V
On-state resistance: 4mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 3
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 40A; 69W; PG-TSDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 40A
Power dissipation: 69W
Case: PG-TSDSON-8
Gate-source voltage: ±20V
On-state resistance: 4mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 3
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1938 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 58+ | 1.24 EUR |
| 76+ | 0.95 EUR |
| 96+ | 0.75 EUR |
| 101+ | 0.71 EUR |
| BSZ097N04LSGATMA1 |
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Hersteller: INFINEON TECHNOLOGIES
BSZ097N04LSGATMA1 SMD N channel transistors
BSZ097N04LSGATMA1 SMD N channel transistors
auf Bestellung 4913 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 140+ | 0.51 EUR |
| 145+ | 0.49 EUR |
| 154+ | 0.46 EUR |
| BSZ440N10NS3GATMA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 18A; 29W; PG-TSDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 18A
Power dissipation: 29W
Case: PG-TSDSON-8
Gate-source voltage: ±20V
On-state resistance: 44mΩ
Mounting: SMD
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 18A; 29W; PG-TSDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 18A
Power dissipation: 29W
Case: PG-TSDSON-8
Gate-source voltage: ±20V
On-state resistance: 44mΩ
Mounting: SMD
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 5899 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 77+ | 0.93 EUR |
| 90+ | 0.8 EUR |
| 91+ | 0.79 EUR |
| BSZ900N15NS3GATMA1 |
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Hersteller: INFINEON TECHNOLOGIES
BSZ900N15NS3GATMA1 SMD N channel transistors
BSZ900N15NS3GATMA1 SMD N channel transistors
auf Bestellung 3006 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 60+ | 1.2 EUR |
| 99+ | 0.72 EUR |
| 105+ | 0.68 EUR |
| 1000+ | 0.66 EUR |
| BSZ900N20NS3GATMA1 |
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Hersteller: INFINEON TECHNOLOGIES
BSZ900N20NS3GATMA1 SMD N channel transistors
BSZ900N20NS3GATMA1 SMD N channel transistors
auf Bestellung 868 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 34+ | 2.12 EUR |
| 55+ | 1.32 EUR |
| 58+ | 1.24 EUR |
| 59+ | 1.23 EUR |
| BTN8962TAAUMA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: Motor and PWM drivers
Description: IC: driver; MOSFET half-bridge; IMC,motor controller; PG-TO263-7
Type of integrated circuit: driver
Output current: -27...30A
Case: PG-TO263-7
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...150°C
Number of channels: 1
On-state resistance: 14.2mΩ
Operating voltage: 5.5...40V DC
Application: DC motors
Topology: MOSFET half-bridge
Technology: NovalithIC™
Kind of integrated circuit: IMC; motor controller
Anzahl je Verpackung: 1 Stücke
Category: Motor and PWM drivers
Description: IC: driver; MOSFET half-bridge; IMC,motor controller; PG-TO263-7
Type of integrated circuit: driver
Output current: -27...30A
Case: PG-TO263-7
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...150°C
Number of channels: 1
On-state resistance: 14.2mΩ
Operating voltage: 5.5...40V DC
Application: DC motors
Topology: MOSFET half-bridge
Technology: NovalithIC™
Kind of integrated circuit: IMC; motor controller
Anzahl je Verpackung: 1 Stücke
auf Bestellung 586 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 13+ | 5.52 EUR |
| 18+ | 4.2 EUR |
| BTS134D |
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Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 3.5A; Ch: 1; N-Channel; SMD; TO252-3
Type of integrated circuit: power switch
Kind of integrated circuit: low-side
Output current: 3.5A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: TO252-3
On-state resistance: 35mΩ
Technology: HITFET®
Output voltage: 42V
Anzahl je Verpackung: 1 Stücke
Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 3.5A; Ch: 1; N-Channel; SMD; TO252-3
Type of integrated circuit: power switch
Kind of integrated circuit: low-side
Output current: 3.5A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: TO252-3
On-state resistance: 35mΩ
Technology: HITFET®
Output voltage: 42V
Anzahl je Verpackung: 1 Stücke
auf Bestellung 71 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 20+ | 3.63 EUR |
| 30+ | 2.4 EUR |
| 33+ | 2.19 EUR |
| 100+ | 1.87 EUR |
| 250+ | 1.67 EUR |
| 500+ | 1.52 EUR |
| BTS142D |
Hersteller: INFINEON TECHNOLOGIES
BTS142D Power switches - integrated circuits
BTS142D Power switches - integrated circuits
auf Bestellung 841 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 23+ | 3.13 EUR |
| 38+ | 1.89 EUR |
| 40+ | 1.79 EUR |
| 2500+ | 1.76 EUR |
| BTS282ZE3180AATMA2 |
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Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 36A; Ch: 1; N-Channel; SMD; PG-TO263-7-1
Type of integrated circuit: power switch
Kind of integrated circuit: low-side
Output current: 36A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: PG-TO263-7-1
On-state resistance: 6.5mΩ
Kind of package: reel; tape
Operating temperature: -40...175°C
Output voltage: 49V
Technology: TEMPFET®
Integrated circuit features: internal temperature sensor
Power dissipation: 300W
Anzahl je Verpackung: 1 Stücke
Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 36A; Ch: 1; N-Channel; SMD; PG-TO263-7-1
Type of integrated circuit: power switch
Kind of integrated circuit: low-side
Output current: 36A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: PG-TO263-7-1
On-state resistance: 6.5mΩ
Kind of package: reel; tape
Operating temperature: -40...175°C
Output voltage: 49V
Technology: TEMPFET®
Integrated circuit features: internal temperature sensor
Power dissipation: 300W
Anzahl je Verpackung: 1 Stücke
auf Bestellung 77 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 9+ | 8.44 EUR |
| 250+ | 7.28 EUR |
| 500+ | 6.12 EUR |
| 1000+ | 5.48 EUR |
| BTS282ZE3230AKSA2 |
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Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 36A; Ch: 1; N-Channel; THT; tube; 300W
Type of integrated circuit: power switch
Kind of integrated circuit: low-side
Output current: 36A
Number of channels: 1
Kind of output: N-Channel
Mounting: THT
Case: PG-TO220-7-12
On-state resistance: 6.5mΩ
Kind of package: tube
Operating temperature: -40...175°C
Output voltage: 49V
Technology: TEMPFET®
Integrated circuit features: internal temperature sensor
Power dissipation: 300W
Anzahl je Verpackung: 1 Stücke
Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 36A; Ch: 1; N-Channel; THT; tube; 300W
Type of integrated circuit: power switch
Kind of integrated circuit: low-side
Output current: 36A
Number of channels: 1
Kind of output: N-Channel
Mounting: THT
Case: PG-TO220-7-12
On-state resistance: 6.5mΩ
Kind of package: tube
Operating temperature: -40...175°C
Output voltage: 49V
Technology: TEMPFET®
Integrated circuit features: internal temperature sensor
Power dissipation: 300W
Anzahl je Verpackung: 1 Stücke
auf Bestellung 46 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 9+ | 8.35 EUR |
| 10+ | 7.51 EUR |
| 11+ | 6.65 EUR |
| 50+ | 5.96 EUR |
| 250+ | 5.72 EUR |
| BTS3035EJ |
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Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 5A; Ch: 1; N-Channel; SMD; SO8-EP
Type of integrated circuit: power switch
Kind of integrated circuit: low-side
Output current: 5A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: SO8-EP
On-state resistance: 70mΩ
Operating temperature: -40...150°C
Output voltage: 40V
Technology: HITFET®
Turn-off time: 210µs
Turn-on time: 115µs
Anzahl je Verpackung: 1 Stücke
Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 5A; Ch: 1; N-Channel; SMD; SO8-EP
Type of integrated circuit: power switch
Kind of integrated circuit: low-side
Output current: 5A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: SO8-EP
On-state resistance: 70mΩ
Operating temperature: -40...150°C
Output voltage: 40V
Technology: HITFET®
Turn-off time: 210µs
Turn-on time: 115µs
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2995 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 42+ | 1.73 EUR |
| 47+ | 1.54 EUR |
| 55+ | 1.3 EUR |
| 100+ | 1.17 EUR |
| 250+ | 1.09 EUR |
| 500+ | 1.03 EUR |
| 1000+ | 0.93 EUR |
| BTS3035TF |
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Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 5A; Ch: 1; N-Channel; SMD; PG-TO252-3
Type of integrated circuit: power switch
Kind of integrated circuit: low-side
Output current: 5A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: PG-TO252-3
On-state resistance: 70mΩ
Operating temperature: -40...150°C
Output voltage: 40V
Technology: HITFET®
Turn-off time: 210µs
Turn-on time: 115µs
Anzahl je Verpackung: 1 Stücke
Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 5A; Ch: 1; N-Channel; SMD; PG-TO252-3
Type of integrated circuit: power switch
Kind of integrated circuit: low-side
Output current: 5A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: PG-TO252-3
On-state resistance: 70mΩ
Operating temperature: -40...150°C
Output voltage: 40V
Technology: HITFET®
Turn-off time: 210µs
Turn-on time: 115µs
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1082 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 38+ | 1.89 EUR |
| 42+ | 1.73 EUR |
| 45+ | 1.62 EUR |
| 50+ | 1.44 EUR |
| 100+ | 1.26 EUR |
| 250+ | 1.16 EUR |
| 500+ | 1.07 EUR |
| BTS3050EJ |
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Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 4A; Ch: 1; N-Channel; SMD; SO8-EP
Type of integrated circuit: power switch
Kind of integrated circuit: low-side
Output current: 4A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: SO8-EP
On-state resistance: 0.1Ω
Operating temperature: -40...150°C
Output voltage: 40V
Technology: HITFET®
Turn-off time: 210µs
Turn-on time: 115µs
Anzahl je Verpackung: 1 Stücke
Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 4A; Ch: 1; N-Channel; SMD; SO8-EP
Type of integrated circuit: power switch
Kind of integrated circuit: low-side
Output current: 4A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: SO8-EP
On-state resistance: 0.1Ω
Operating temperature: -40...150°C
Output voltage: 40V
Technology: HITFET®
Turn-off time: 210µs
Turn-on time: 115µs
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2945 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 48+ | 1.52 EUR |
| 53+ | 1.36 EUR |
| 64+ | 1.13 EUR |
| 100+ | 1.02 EUR |
| 250+ | 0.94 EUR |
| 500+ | 0.9 EUR |
| 1000+ | 0.82 EUR |
| BTS3110N |
Hersteller: INFINEON TECHNOLOGIES
BTS3110N Power switches - integrated circuits
BTS3110N Power switches - integrated circuits
auf Bestellung 2119 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 23+ | 3.12 EUR |
| 59+ | 1.22 EUR |
| 62+ | 1.16 EUR |
| 1000+ | 1.13 EUR |
| BTS3118N |
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Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 2.17A; Ch: 1; N-Channel; SMD; SOT223-3
Type of integrated circuit: power switch
Kind of integrated circuit: low-side
Output current: 2.17A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: SOT223-3
On-state resistance: 70mΩ
Technology: HITFET®
Output voltage: 42V
Anzahl je Verpackung: 1 Stücke
Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 2.17A; Ch: 1; N-Channel; SMD; SOT223-3
Type of integrated circuit: power switch
Kind of integrated circuit: low-side
Output current: 2.17A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: SOT223-3
On-state resistance: 70mΩ
Technology: HITFET®
Output voltage: 42V
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1908 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 38+ | 1.93 EUR |
| 51+ | 1.42 EUR |
| 55+ | 1.3 EUR |
| 100+ | 1.22 EUR |
| BTS3405G |
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Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 350mA; Ch: 2; N-Channel; SMD; HITFET®
Type of integrated circuit: power switch
Kind of integrated circuit: low-side
Output current: 0.35A
Number of channels: 2
Mounting: SMD
Case: PG-DSO-8-25
On-state resistance: 0.35Ω
Output voltage: 10V
Technology: HITFET®
Kind of output: N-Channel
Anzahl je Verpackung: 1 Stücke
Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 350mA; Ch: 2; N-Channel; SMD; HITFET®
Type of integrated circuit: power switch
Kind of integrated circuit: low-side
Output current: 0.35A
Number of channels: 2
Mounting: SMD
Case: PG-DSO-8-25
On-state resistance: 0.35Ω
Output voltage: 10V
Technology: HITFET®
Kind of output: N-Channel
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2207 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 27+ | 2.7 EUR |
| 42+ | 1.73 EUR |
| 47+ | 1.54 EUR |
| 100+ | 1.42 EUR |
| BTS3408GXUMA2 |
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Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 550mA; Ch: 2; N-Channel; SMD; PG-DSO-8
Mounting: SMD
Technology: HITFET®
Kind of integrated circuit: low-side
Kind of output: N-Channel
Case: PG-DSO-8
Type of integrated circuit: power switch
Operating temperature: -40...150°C
Turn-on time: 2µs
Turn-off time: 2µs
On-state resistance: 0.48Ω
Output current: 0.55A
Power dissipation: 0.88W
Number of channels: 2
Supply voltage: 4.5...60V DC
Output voltage: 60V
Anzahl je Verpackung: 1 Stücke
Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 550mA; Ch: 2; N-Channel; SMD; PG-DSO-8
Mounting: SMD
Technology: HITFET®
Kind of integrated circuit: low-side
Kind of output: N-Channel
Case: PG-DSO-8
Type of integrated circuit: power switch
Operating temperature: -40...150°C
Turn-on time: 2µs
Turn-off time: 2µs
On-state resistance: 0.48Ω
Output current: 0.55A
Power dissipation: 0.88W
Number of channels: 2
Supply voltage: 4.5...60V DC
Output voltage: 60V
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1797 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 31+ | 2.35 EUR |
| 38+ | 1.89 EUR |
| 40+ | 1.83 EUR |
| 100+ | 1.76 EUR |
| 250+ | 1.72 EUR |
| BTS3410GXUMA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 1.3A; Ch: 2; N-Channel; SMD; PG-DSO-8
Case: PG-DSO-8
Type of integrated circuit: power switch
Mounting: SMD
Technology: HITFET®
Kind of integrated circuit: low-side
Kind of output: N-Channel
On-state resistance: 0.2Ω
Power dissipation: 0.8W
Number of channels: 2
Output current: 1.3A
Anzahl je Verpackung: 1 Stücke
Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 1.3A; Ch: 2; N-Channel; SMD; PG-DSO-8
Case: PG-DSO-8
Type of integrated circuit: power switch
Mounting: SMD
Technology: HITFET®
Kind of integrated circuit: low-side
Kind of output: N-Channel
On-state resistance: 0.2Ω
Power dissipation: 0.8W
Number of channels: 2
Output current: 1.3A
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2424 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 25+ | 2.89 EUR |
| 54+ | 1.34 EUR |
| 57+ | 1.26 EUR |
| BTS3800SL |
Hersteller: INFINEON TECHNOLOGIES
BTS3800SL Power switches - integrated circuits
BTS3800SL Power switches - integrated circuits
auf Bestellung 824 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 36+ | 2.02 EUR |
| 135+ | 0.53 EUR |
| 143+ | 0.5 EUR |
| BTS4140N |
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Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 0.2A; Ch: 1; N-Channel; SMD; SOT223-3
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 0.2A
Mounting: SMD
Number of channels: 1
Case: SOT223-3
Supply voltage: 4.9...60V DC
On-state resistance: 1Ω
Technology: Classic PROFET
Kind of output: N-Channel
Anzahl je Verpackung: 1 Stücke
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 0.2A; Ch: 1; N-Channel; SMD; SOT223-3
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 0.2A
Mounting: SMD
Number of channels: 1
Case: SOT223-3
Supply voltage: 4.9...60V DC
On-state resistance: 1Ω
Technology: Classic PROFET
Kind of output: N-Channel
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1614 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 48+ | 1.52 EUR |
| 53+ | 1.36 EUR |
| 60+ | 1.2 EUR |
| 100+ | 1.09 EUR |
| 500+ | 1.06 EUR |
| BTS4141N | ![]() |
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Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 0.7A; Ch: 1; N-Channel; SMD
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 0.7A
Mounting: SMD
Number of channels: 1
Case: PG-SOT223-4
On-state resistance: 0.175Ω
Output voltage: 12...45V
Technology: Classic PROFET
Kind of output: N-Channel
Anzahl je Verpackung: 1 Stücke
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 0.7A; Ch: 1; N-Channel; SMD
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 0.7A
Mounting: SMD
Number of channels: 1
Case: PG-SOT223-4
On-state resistance: 0.175Ω
Output voltage: 12...45V
Technology: Classic PROFET
Kind of output: N-Channel
Anzahl je Verpackung: 1 Stücke
auf Bestellung 3130 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 19+ | 3.93 EUR |
| 28+ | 2.62 EUR |
| 100+ | 2.06 EUR |
| 250+ | 1.84 EUR |
| 500+ | 1.69 EUR |
| 1000+ | 1.63 EUR |
| BTS4142N |
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Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 1.4A; Ch: 1; N-Channel; SMD; SOT223-3
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 1.4A
Mounting: SMD
Number of channels: 1
Case: SOT223-3
Supply voltage: 12...45V DC
On-state resistance: 0.15Ω
Technology: Classic PROFET
Kind of output: N-Channel
Anzahl je Verpackung: 1 Stücke
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 1.4A; Ch: 1; N-Channel; SMD; SOT223-3
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 1.4A
Mounting: SMD
Number of channels: 1
Case: SOT223-3
Supply voltage: 12...45V DC
On-state resistance: 0.15Ω
Technology: Classic PROFET
Kind of output: N-Channel
Anzahl je Verpackung: 1 Stücke
auf Bestellung 398 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 20+ | 3.66 EUR |
| 28+ | 2.6 EUR |
| 40+ | 2.2 EUR |
| 80+ | 2.03 EUR |
| 100+ | 1.96 EUR |
| 250+ | 1.74 EUR |
| 500+ | 1.72 EUR |
| BTS428L2 |
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Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 5.8A; Ch: 1; N-Channel; SMD; TO252
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 5.8A
Mounting: SMD
Number of channels: 1
Case: TO252
On-state resistance: 50mΩ
Output voltage: 4.75...41V
Technology: Classic PROFET; SIPMOS™
Kind of output: N-Channel
Anzahl je Verpackung: 1 Stücke
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 5.8A; Ch: 1; N-Channel; SMD; TO252
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 5.8A
Mounting: SMD
Number of channels: 1
Case: TO252
On-state resistance: 50mΩ
Output voltage: 4.75...41V
Technology: Classic PROFET; SIPMOS™
Kind of output: N-Channel
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2284 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 14+ | 5.49 EUR |
| 20+ | 3.68 EUR |
| 100+ | 2.97 EUR |
| 250+ | 2.7 EUR |
| 500+ | 2.5 EUR |
| 1000+ | 2.49 EUR |
| BTS4300SGA |
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Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 400mA; Ch: 1; N-Channel; SMD; SO8
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 0.4A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: SO8
On-state resistance: 0.3Ω
Supply voltage: 5...34V DC
Technology: Classic PROFET
Anzahl je Verpackung: 1 Stücke
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 400mA; Ch: 1; N-Channel; SMD; SO8
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 0.4A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: SO8
On-state resistance: 0.3Ω
Supply voltage: 5...34V DC
Technology: Classic PROFET
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1949 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 27+ | 2.66 EUR |
| 42+ | 1.73 EUR |
| 48+ | 1.52 EUR |
| 100+ | 1.24 EUR |
| 250+ | 1.1 EUR |
| 500+ | 1 EUR |
| 1000+ | 0.92 EUR |
| BTS441RG |
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Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 17A; Ch: 1; N-Channel; SMD; TO263-5
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 17A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: TO263-5
On-state resistance: 15mΩ
Output voltage: 4.75...43V
Technology: Classic PROFET
Anzahl je Verpackung: 1 Stücke
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 17A; Ch: 1; N-Channel; SMD; TO263-5
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 17A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: TO263-5
On-state resistance: 15mΩ
Output voltage: 4.75...43V
Technology: Classic PROFET
Anzahl je Verpackung: 1 Stücke
auf Bestellung 840 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 15+ | 4.86 EUR |
| 17+ | 4.29 EUR |
| 25+ | 3.85 EUR |
| 100+ | 3.65 EUR |















