Produkte > INFINEON TECHNOLOGIES > Alle Produkte des Herstellers INFINEON TECHNOLOGIES (152101) > Seite 1262 nach 2536
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
||||||||||||||
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
BSL308CH6327XTSA1 | INFINEON TECHNOLOGIES |
![]() |
auf Bestellung 2930 Stücke: Lieferzeit 7-14 Tag (e) |
|
|||||||||||||||
BSL308PEH6327XTSA1 | INFINEON TECHNOLOGIES |
![]() |
auf Bestellung 2072 Stücke: Lieferzeit 7-14 Tag (e) |
|
|||||||||||||||
BSL316CH6327XTSA1 | INFINEON TECHNOLOGIES |
![]() |
auf Bestellung 2715 Stücke: Lieferzeit 7-14 Tag (e) |
|
|||||||||||||||
BSL372SNH6327XTSA1 | INFINEON TECHNOLOGIES |
![]() |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
![]() |
BSL606SNH6327XTSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 60V; 4.5A; 2W; PG-TSOP-6 Type of transistor: N-MOSFET Polarisation: unipolar Power dissipation: 2W Case: PG-TSOP-6 Mounting: SMD Kind of channel: enhancement Technology: OptiMOS™ 3 On-state resistance: 95mΩ Drain current: 4.5A Drain-source voltage: 60V Gate-source voltage: ±20V Anzahl je Verpackung: 1 Stücke |
auf Bestellung 4585 Stücke: Lieferzeit 7-14 Tag (e) |
|
||||||||||||||
BSL802SNH6327XTSA1 | INFINEON TECHNOLOGIES |
![]() |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
BSM200GB60DLC | INFINEON TECHNOLOGIES | BSM200GB60DLC IGBT modules |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
BSO033N03MSGXUMA1 | INFINEON TECHNOLOGIES |
![]() |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
BSO080P03SHXUMA1 | INFINEON TECHNOLOGIES |
![]() |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
BSO110N03MSGXUMA1 | INFINEON TECHNOLOGIES |
![]() |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
![]() |
BSO150N03MDGXUMA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 30V; 9.3A; 1.56W; PG-DSO-8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 9.3A Power dissipation: 1.56W Case: PG-DSO-8 Gate-source voltage: ±20V On-state resistance: 15mΩ Mounting: SMD Kind of channel: enhancement Technology: OptiMOS™ 3 Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
BSO201SPHXUMA1 | INFINEON TECHNOLOGIES |
![]() |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
BSO203PHXUMA1 | INFINEON TECHNOLOGIES |
![]() |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
BSO203SPHXUMA1 | INFINEON TECHNOLOGIES |
![]() |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
![]() |
BSO207PHXUMA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: P-MOSFET; unipolar; -20V; -5A; 1.6W; PG-DSO-8 Case: PG-DSO-8 Mounting: SMD Gate-source voltage: ±12V Kind of channel: enhancement Technology: OptiMOS™ P Type of transistor: P-MOSFET Polarisation: unipolar Drain current: -5A Drain-source voltage: -20V On-state resistance: 45mΩ Power dissipation: 1.6W Anzahl je Verpackung: 1 Stücke |
auf Bestellung 2211 Stücke: Lieferzeit 7-14 Tag (e) |
|
||||||||||||||
![]() |
BSO211PHXUMA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: P-MOSFET; unipolar; -20V; -4.6A; 1.6W; PG-DSO-8 Case: PG-DSO-8 Mounting: SMD Gate-source voltage: ±12V Kind of channel: enhancement Technology: OptiMOS™ P Type of transistor: P-MOSFET Polarisation: unipolar Drain current: -4.6A Drain-source voltage: -20V On-state resistance: 67mΩ Power dissipation: 1.6W Anzahl je Verpackung: 1 Stücke |
auf Bestellung 2320 Stücke: Lieferzeit 7-14 Tag (e) |
|
||||||||||||||
BSO220N03MDGXUMA1 | INFINEON TECHNOLOGIES |
![]() |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
BSO301SPHXUMA1 | INFINEON TECHNOLOGIES |
![]() |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
BSO303SPHXUMA1 | INFINEON TECHNOLOGIES |
![]() |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
BSO613SPVGXUMA1 | INFINEON TECHNOLOGIES |
![]() |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
![]() |
BSP125H6327XTSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 600V; 0.12A; 1.8W; SOT223 Type of transistor: N-MOSFET Case: SOT223 Technology: SIPMOS™ Mounting: SMD Drain-source voltage: 600V Drain current: 0.12A On-state resistance: 45Ω Power dissipation: 1.8W Gate-source voltage: ±20V Polarisation: unipolar Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 965 Stücke: Lieferzeit 7-14 Tag (e) |
|
||||||||||||||
![]() |
BSP129H6327XTSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 240V; 0.05A; 1.8W; SOT223 Type of transistor: N-MOSFET Case: SOT223 Technology: SIPMOS™ Mounting: SMD Drain-source voltage: 240V Drain current: 50mA On-state resistance: 6.5Ω Power dissipation: 1.8W Gate-source voltage: ±20V Polarisation: unipolar Kind of channel: depletion Anzahl je Verpackung: 1 Stücke |
auf Bestellung 1543 Stücke: Lieferzeit 7-14 Tag (e) |
|
||||||||||||||
BSP129H6906XTSA1 | INFINEON TECHNOLOGIES |
![]() |
auf Bestellung 109 Stücke: Lieferzeit 7-14 Tag (e) |
|
|||||||||||||||
![]() |
BSP135H6327XTSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 600V; 0.12A; 1.8W; SOT223 Mounting: SMD Polarisation: unipolar Drain current: 0.12A Power dissipation: 1.8W Gate-source voltage: ±20V On-state resistance: 60Ω Drain-source voltage: 600V Case: SOT223 Kind of channel: depletion Type of transistor: N-MOSFET Technology: SIPMOS™ Anzahl je Verpackung: 1 Stücke |
auf Bestellung 1483 Stücke: Lieferzeit 7-14 Tag (e) |
|
||||||||||||||
![]() |
BSP149H6327XTSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 200V; 0.53A; Idm: 2.6A; 1.8W; SOT223 Type of transistor: N-MOSFET Case: SOT223 Technology: SIPMOS™ Mounting: SMD Drain-source voltage: 200V Drain current: 0.53A On-state resistance: 3.5Ω Power dissipation: 1.8W Gate-source voltage: ±20V Pulsed drain current: 2.6A Polarisation: unipolar Kind of channel: depletion Anzahl je Verpackung: 1 Stücke |
auf Bestellung 1555 Stücke: Lieferzeit 7-14 Tag (e) |
|
||||||||||||||
![]() |
BSP149H6906XTSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; SIPMOS®; unipolar; 200V; 0.53A; Idm: 2.6A Type of transistor: N-MOSFET Case: SOT223 Technology: SIPMOS® Mounting: SMD Drain-source voltage: 200V Drain current: 0.53A On-state resistance: 3.5Ω Power dissipation: 1.8W Gate-source voltage: ±20V Pulsed drain current: 2.6A Polarisation: unipolar Kind of channel: depletion Anzahl je Verpackung: 1000 Stücke |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
![]() |
BSP170PH6327XTSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: P-MOSFET; unipolar; -60V; -1.9A; 1.8W; PG-SOT223 Case: PG-SOT223 Type of transistor: P-MOSFET Technology: SIPMOS™ Mounting: SMD Polarisation: unipolar Drain-source voltage: -60V Drain current: -1.9A On-state resistance: 0.3Ω Power dissipation: 1.8W Gate-source voltage: ±20V Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 1597 Stücke: Lieferzeit 7-14 Tag (e) |
|
||||||||||||||
![]() |
BSP171PH6327XTSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: P-MOSFET; unipolar; -60V; -1.9A; 1.8W; PG-SOT223 Case: PG-SOT223 Type of transistor: P-MOSFET Technology: SIPMOS™ Mounting: SMD Polarisation: unipolar Drain-source voltage: -60V Drain current: -1.9A On-state resistance: 0.3Ω Power dissipation: 1.8W Gate-source voltage: ±20V Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 1933 Stücke: Lieferzeit 7-14 Tag (e) |
|
||||||||||||||
![]() |
BSP295H6327XTSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 60V; 1.8A; 1.8W; SOT223 Type of transistor: N-MOSFET Polarisation: unipolar Power dissipation: 1.8W Case: SOT223 Mounting: SMD Kind of channel: enhancement Technology: SIPMOS™ On-state resistance: 0.3Ω Drain current: 1.8A Drain-source voltage: 60V Gate-source voltage: ±20V Anzahl je Verpackung: 1 Stücke |
auf Bestellung 358 Stücke: Lieferzeit 7-14 Tag (e) |
|
||||||||||||||
![]() |
BSP296NH6327XTSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 100V; 1.2A; 1.8W; SOT223 Type of transistor: N-MOSFET Technology: OptiMOS™ Polarisation: unipolar Drain-source voltage: 100V Drain current: 1.2A Power dissipation: 1.8W Case: SOT223 Gate-source voltage: ±20V On-state resistance: 0.8Ω Mounting: SMD Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 1620 Stücke: Lieferzeit 7-14 Tag (e) |
|
||||||||||||||
BSP297H6327XTSA1 | INFINEON TECHNOLOGIES |
![]() |
auf Bestellung 793 Stücke: Lieferzeit 7-14 Tag (e) |
|
|||||||||||||||
BSP315PH6327XTSA1 | INFINEON TECHNOLOGIES |
![]() |
auf Bestellung 1684 Stücke: Lieferzeit 7-14 Tag (e) |
|
|||||||||||||||
![]() |
BSP316PH6327XTSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: P-MOSFET; unipolar; -100V; -0.68A; 1.8W; PG-SOT223 Kind of channel: enhancement Case: PG-SOT223 Type of transistor: P-MOSFET Technology: SIPMOS™ Mounting: SMD Polarisation: unipolar Drain-source voltage: -100V Drain current: -680mA On-state resistance: 1.8Ω Power dissipation: 1.8W Gate-source voltage: ±20V Anzahl je Verpackung: 1 Stücke |
auf Bestellung 730 Stücke: Lieferzeit 7-14 Tag (e) |
|
||||||||||||||
BSP317PH6327XTSA1 | INFINEON TECHNOLOGIES |
![]() |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
![]() |
BSP322PH6327XTSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: P-MOSFET; unipolar; -100V; -1A; 1.8W; PG-SOT223 Drain-source voltage: -100V Drain current: -1A On-state resistance: 0.8Ω Type of transistor: P-MOSFET Power dissipation: 1.8W Polarisation: unipolar Technology: SIPMOS™ Kind of channel: enhancement Gate-source voltage: ±20V Mounting: SMD Case: PG-SOT223 Anzahl je Verpackung: 1 Stücke |
auf Bestellung 881 Stücke: Lieferzeit 7-14 Tag (e) |
|
||||||||||||||
![]() |
BSP324H6327XTSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 400V; 0.17A; 1.8W; SOT223 Mounting: SMD Case: SOT223 Drain-source voltage: 400V Drain current: 0.17A On-state resistance: 25Ω Type of transistor: N-MOSFET Power dissipation: 1.8W Polarisation: unipolar Technology: SIPMOS™ Kind of channel: enhancement Gate-source voltage: ±20V Anzahl je Verpackung: 1 Stücke |
auf Bestellung 300 Stücke: Lieferzeit 7-14 Tag (e) |
|
||||||||||||||
BSP372NH6327XTSA1 | INFINEON TECHNOLOGIES |
![]() |
auf Bestellung 521 Stücke: Lieferzeit 7-14 Tag (e) |
|
|||||||||||||||
![]() |
BSP373NH6327XTSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 100V; 1.8A; 1.8W; SOT223 Kind of channel: enhancement Mounting: SMD Type of transistor: N-MOSFET Technology: OptiMOS™ On-state resistance: 0.24Ω Drain current: 1.8A Power dissipation: 1.8W Gate-source voltage: ±20V Case: SOT223 Drain-source voltage: 100V Polarisation: unipolar Anzahl je Verpackung: 1 Stücke |
auf Bestellung 1920 Stücke: Lieferzeit 7-14 Tag (e) |
|
||||||||||||||
![]() |
BSP452 | INFINEON TECHNOLOGIES |
![]() Description: IC: power switch; high-side; 700mA; Ch: 1; N-Channel; SMD; SOT223-3 Type of integrated circuit: power switch Kind of integrated circuit: high-side Output current: 0.7A Number of channels: 1 Kind of output: N-Channel Mounting: SMD Case: SOT223-3 On-state resistance: 0.16Ω Technology: Classic PROFET Output voltage: 40V Anzahl je Verpackung: 1 Stücke |
auf Bestellung 2752 Stücke: Lieferzeit 7-14 Tag (e) |
|
||||||||||||||
BSP50H6327XTSA1 | INFINEON TECHNOLOGIES |
![]() |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
BSP603S2L | INFINEON TECHNOLOGIES | BSP603S2L SMD N channel transistors |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
![]() |
BSP613PH6327XTSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: P-MOSFET; unipolar; -60V; -2.9A; 1.8W; PG-SOT223 Type of transistor: P-MOSFET Technology: SIPMOS™ Polarisation: unipolar Drain-source voltage: -60V Drain current: -2.9A Power dissipation: 1.8W Case: PG-SOT223 Gate-source voltage: ±20V On-state resistance: 0.13Ω Mounting: SMD Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 798 Stücke: Lieferzeit 7-14 Tag (e) |
|
||||||||||||||
BSP61H6327XTSA1 | INFINEON TECHNOLOGIES |
![]() |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
![]() |
BSP742R | INFINEON TECHNOLOGIES |
![]() Description: IC: power switch; high-side; 400mA; Ch: 1; N-Channel; SMD; SO8 Type of integrated circuit: power switch Kind of integrated circuit: high-side Output current: 0.4A Number of channels: 1 Kind of output: N-Channel Mounting: SMD Case: SO8 On-state resistance: 0.25Ω Technology: Classic PROFET Output voltage: 40V Anzahl je Verpackung: 1 Stücke |
auf Bestellung 1739 Stücke: Lieferzeit 7-14 Tag (e) |
|
||||||||||||||
![]() |
BSP742RIXUMA1 | INFINEON TECHNOLOGIES |
![]() Description: IC: power switch; high-side; 400mA; Ch: 1; N-Channel; SMD; SO8; reel Type of integrated circuit: power switch Kind of integrated circuit: high-side Output current: 0.4A Number of channels: 1 Kind of output: N-Channel Mounting: SMD Case: SO8 On-state resistance: 0.25Ω Kind of package: reel Technology: Classic PROFET Anzahl je Verpackung: 2500 Stücke |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
BSP742T | INFINEON TECHNOLOGIES | BSP742T Power switches - integrated circuits |
auf Bestellung 1754 Stücke: Lieferzeit 7-14 Tag (e) |
|
|||||||||||||||
![]() |
BSP752R | INFINEON TECHNOLOGIES |
![]() Description: IC: power switch; high-side; 1.3A; Ch: 1; N-Channel; SMD; SO8 Mounting: SMD Kind of output: N-Channel Type of integrated circuit: power switch Case: SO8 On-state resistance: 0.15Ω Number of channels: 1 Output current: 1.3A Output voltage: 52V Technology: Classic PROFET Kind of integrated circuit: high-side Anzahl je Verpackung: 1 Stücke |
auf Bestellung 2565 Stücke: Lieferzeit 7-14 Tag (e) |
|
||||||||||||||
![]() |
BSP752T | INFINEON TECHNOLOGIES |
![]() Description: IC: power switch; high-side; 1.3A; Ch: 1; N-Channel; SMD; SO8 Mounting: SMD On-state resistance: 0.15Ω Number of channels: 1 Output current: 1.3A Output voltage: 52V Type of integrated circuit: power switch Technology: Classic PROFET Case: SO8 Kind of output: N-Channel Kind of integrated circuit: high-side Anzahl je Verpackung: 2500 Stücke |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
BSP752TXUMA1 | INFINEON TECHNOLOGIES |
![]() Description: IC: power switch; high-side; 1.3A; Ch: 1; N-Channel; SMD; SO8 Mounting: SMD On-state resistance: 0.15Ω Number of channels: 1 Output current: 1.3A Output voltage: 52V Type of integrated circuit: power switch Technology: Classic PROFET Case: SO8 Kind of output: N-Channel Kind of integrated circuit: high-side Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
![]() |
BSP762T | INFINEON TECHNOLOGIES |
![]() Description: IC: power switch; high-side; 2A; Ch: 1; N-Channel; SMD; SO8 Type of integrated circuit: power switch Output current: 2A Number of channels: 1 Kind of output: N-Channel Mounting: SMD Case: SO8 On-state resistance: 70mΩ Output voltage: 40V Technology: Classic PROFET Kind of integrated circuit: high-side Anzahl je Verpackung: 1 Stücke |
auf Bestellung 2439 Stücke: Lieferzeit 7-14 Tag (e) |
|
||||||||||||||
![]() |
BSP76E6433 | INFINEON TECHNOLOGIES |
![]() Description: IC: power switch; low-side; 1.4A; Ch: 1; N-Channel; SMD; PG-SOT223-4 Mounting: SMD Technology: HITFET® Kind of integrated circuit: low-side Kind of output: N-Channel Case: PG-SOT223-4 Type of integrated circuit: power switch Number of channels: 1 Output current: 1.4A Output voltage: 42V Anzahl je Verpackung: 1 Stücke |
auf Bestellung 2201 Stücke: Lieferzeit 7-14 Tag (e) |
|
||||||||||||||
![]() |
BSP772T | INFINEON TECHNOLOGIES |
![]() Description: IC: power switch; high-side; 2.6A; Ch: 1; N-Channel; SMD; SO8 Type of integrated circuit: power switch Kind of integrated circuit: high-side Output current: 2.6A Number of channels: 1 Kind of output: N-Channel Mounting: SMD Case: SO8 On-state resistance: 50mΩ Supply voltage: 5...34V DC Technology: Classic PROFET Anzahl je Verpackung: 1 Stücke |
auf Bestellung 1673 Stücke: Lieferzeit 7-14 Tag (e) |
|
||||||||||||||
![]() |
BSP77E6433 | INFINEON TECHNOLOGIES |
![]() Description: IC: power switch; low-side; 2.17A; Ch: 1; N-Channel; SMD; SOT223-3 Type of integrated circuit: power switch Kind of integrated circuit: low-side Output current: 2.17A Number of channels: 1 Kind of output: N-Channel Mounting: SMD Case: SOT223-3 On-state resistance: 70mΩ Technology: HITFET® Output voltage: 42V Anzahl je Verpackung: 1 Stücke |
auf Bestellung 3057 Stücke: Lieferzeit 7-14 Tag (e) |
|
||||||||||||||
![]() |
BSP78 | INFINEON TECHNOLOGIES |
![]() Description: IC: power switch; low-side; 3A; Ch: 1; N-Channel; SMD; SOT223-3 Type of integrated circuit: power switch Kind of integrated circuit: low-side Output current: 3A Number of channels: 1 Kind of output: N-Channel Mounting: SMD Case: SOT223-3 On-state resistance: 35mΩ Technology: HITFET® Output voltage: 42V Anzahl je Verpackung: 1 Stücke |
auf Bestellung 2569 Stücke: Lieferzeit 7-14 Tag (e) |
|
||||||||||||||
![]() |
BSP88H6327XTSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 240V; 0.35A; 1.8W; SOT223 Mounting: SMD Type of transistor: N-MOSFET Technology: SIPMOS™ Polarisation: unipolar Drain-source voltage: 240V Drain current: 0.35A Case: SOT223 On-state resistance: 6Ω Gate-source voltage: ±20V Power dissipation: 1.8W Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 127 Stücke: Lieferzeit 7-14 Tag (e) |
|
||||||||||||||
![]() |
BSP89H6327XTSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 240V; 0.35A; 1.8W; SOT223 Type of transistor: N-MOSFET Technology: SIPMOS™ Polarisation: unipolar Drain-source voltage: 240V Drain current: 0.35A Power dissipation: 1.8W Case: SOT223 Gate-source voltage: ±20V On-state resistance: 6Ω Mounting: SMD Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 428 Stücke: Lieferzeit 7-14 Tag (e) |
|
||||||||||||||
![]() |
BSP92PH6327XTSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: P-MOSFET; unipolar; -250V; -0.26A; 1.8W; PG-SOT223 Drain-source voltage: -250V Drain current: -0.26A On-state resistance: 12Ω Type of transistor: P-MOSFET Power dissipation: 1.8W Polarisation: unipolar Technology: SIPMOS™ Kind of channel: enhancement Gate-source voltage: ±20V Mounting: SMD Case: PG-SOT223 Anzahl je Verpackung: 1 Stücke |
auf Bestellung 2907 Stücke: Lieferzeit 7-14 Tag (e) |
|
||||||||||||||
![]() |
BSR202NL6327HTSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 20V; 3.8A; 0.5W; SC59 Case: SC59 Mounting: SMD Type of transistor: N-MOSFET Technology: OptiMOS™ 2 Polarisation: unipolar On-state resistance: 21mΩ Power dissipation: 0.5W Drain current: 3.8A Gate-source voltage: ±12V Drain-source voltage: 20V Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 2763 Stücke: Lieferzeit 7-14 Tag (e) |
|
||||||||||||||
![]() |
BSR302NL6327HTSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 30V; 3.7A; 0.5W; SC59 Kind of channel: enhancement Mounting: SMD Type of transistor: N-MOSFET Technology: OptiMOS™ 2 Polarisation: unipolar On-state resistance: 36mΩ Power dissipation: 0.5W Drain current: 3.7A Gate-source voltage: ±20V Drain-source voltage: 30V Case: SC59 Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
![]() |
BSR315PH6327XTSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: P-MOSFET; unipolar; -60V; -0.49A; 0.5W; SC59 Type of transistor: P-MOSFET Technology: SIPMOS™ Polarisation: unipolar Drain-source voltage: -60V Drain current: -0.49A Power dissipation: 0.5W Case: SC59 Gate-source voltage: ±20V On-state resistance: 1.3Ω Mounting: SMD Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 2400 Stücke: Lieferzeit 7-14 Tag (e) |
|
BSL308CH6327XTSA1 |
![]() |
Hersteller: INFINEON TECHNOLOGIES
BSL308CH6327XTSA1 Multi channel transistors
BSL308CH6327XTSA1 Multi channel transistors
auf Bestellung 2930 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
85+ | 0.84 EUR |
277+ | 0.26 EUR |
293+ | 0.24 EUR |
BSL308PEH6327XTSA1 |
![]() |
Hersteller: INFINEON TECHNOLOGIES
BSL308PEH6327XTSA1 Multi channel transistors
BSL308PEH6327XTSA1 Multi channel transistors
auf Bestellung 2072 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
98+ | 0.73 EUR |
226+ | 0.32 EUR |
239+ | 0.3 EUR |
3000+ | 0.29 EUR |
BSL316CH6327XTSA1 |
![]() |
Hersteller: INFINEON TECHNOLOGIES
BSL316CH6327XTSA1 Multi channel transistors
BSL316CH6327XTSA1 Multi channel transistors
auf Bestellung 2715 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
102+ | 0.71 EUR |
388+ | 0.18 EUR |
410+ | 0.17 EUR |
BSL372SNH6327XTSA1 |
![]() |
Hersteller: INFINEON TECHNOLOGIES
BSL372SNH6327XTSA1 SMD N channel transistors
BSL372SNH6327XTSA1 SMD N channel transistors
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
BSL606SNH6327XTSA1 |
![]() |
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 4.5A; 2W; PG-TSOP-6
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 2W
Case: PG-TSOP-6
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 3
On-state resistance: 95mΩ
Drain current: 4.5A
Drain-source voltage: 60V
Gate-source voltage: ±20V
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 4.5A; 2W; PG-TSOP-6
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 2W
Case: PG-TSOP-6
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 3
On-state resistance: 95mΩ
Drain current: 4.5A
Drain-source voltage: 60V
Gate-source voltage: ±20V
Anzahl je Verpackung: 1 Stücke
auf Bestellung 4585 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
103+ | 0.7 EUR |
122+ | 0.59 EUR |
136+ | 0.53 EUR |
178+ | 0.4 EUR |
247+ | 0.29 EUR |
261+ | 0.27 EUR |
1000+ | 0.26 EUR |
BSL802SNH6327XTSA1 |
![]() |
Hersteller: INFINEON TECHNOLOGIES
BSL802SNH6327XTSA1 SMD N channel transistors
BSL802SNH6327XTSA1 SMD N channel transistors
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
BSM200GB60DLC |
Hersteller: INFINEON TECHNOLOGIES
BSM200GB60DLC IGBT modules
BSM200GB60DLC IGBT modules
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
BSO033N03MSGXUMA1 |
![]() |
Hersteller: INFINEON TECHNOLOGIES
BSO033N03MSGXUMA1 SMD N channel transistors
BSO033N03MSGXUMA1 SMD N channel transistors
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
BSO080P03SHXUMA1 |
![]() |
Hersteller: INFINEON TECHNOLOGIES
BSO080P03SHXUMA1 SMD P channel transistors
BSO080P03SHXUMA1 SMD P channel transistors
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
BSO110N03MSGXUMA1 |
![]() |
Hersteller: INFINEON TECHNOLOGIES
BSO110N03MSGXUMA1 SMD N channel transistors
BSO110N03MSGXUMA1 SMD N channel transistors
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
BSO150N03MDGXUMA1 |
![]() |
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 9.3A; 1.56W; PG-DSO-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 9.3A
Power dissipation: 1.56W
Case: PG-DSO-8
Gate-source voltage: ±20V
On-state resistance: 15mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 3
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 9.3A; 1.56W; PG-DSO-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 9.3A
Power dissipation: 1.56W
Case: PG-DSO-8
Gate-source voltage: ±20V
On-state resistance: 15mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 3
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
BSO201SPHXUMA1 |
![]() |
Hersteller: INFINEON TECHNOLOGIES
BSO201SPHXUMA1 SMD P channel transistors
BSO201SPHXUMA1 SMD P channel transistors
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
BSO203PHXUMA1 |
![]() |
Hersteller: INFINEON TECHNOLOGIES
BSO203PHXUMA1 SMD P channel transistors
BSO203PHXUMA1 SMD P channel transistors
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
BSO203SPHXUMA1 |
![]() |
Hersteller: INFINEON TECHNOLOGIES
BSO203SPHXUMA1 SMD P channel transistors
BSO203SPHXUMA1 SMD P channel transistors
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
BSO207PHXUMA1 |
![]() |
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -5A; 1.6W; PG-DSO-8
Case: PG-DSO-8
Mounting: SMD
Gate-source voltage: ±12V
Kind of channel: enhancement
Technology: OptiMOS™ P
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain current: -5A
Drain-source voltage: -20V
On-state resistance: 45mΩ
Power dissipation: 1.6W
Anzahl je Verpackung: 1 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -5A; 1.6W; PG-DSO-8
Case: PG-DSO-8
Mounting: SMD
Gate-source voltage: ±12V
Kind of channel: enhancement
Technology: OptiMOS™ P
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain current: -5A
Drain-source voltage: -20V
On-state resistance: 45mΩ
Power dissipation: 1.6W
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2211 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
218+ | 0.33 EUR |
224+ | 0.32 EUR |
BSO211PHXUMA1 |
![]() |
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -4.6A; 1.6W; PG-DSO-8
Case: PG-DSO-8
Mounting: SMD
Gate-source voltage: ±12V
Kind of channel: enhancement
Technology: OptiMOS™ P
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain current: -4.6A
Drain-source voltage: -20V
On-state resistance: 67mΩ
Power dissipation: 1.6W
Anzahl je Verpackung: 1 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -4.6A; 1.6W; PG-DSO-8
Case: PG-DSO-8
Mounting: SMD
Gate-source voltage: ±12V
Kind of channel: enhancement
Technology: OptiMOS™ P
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain current: -4.6A
Drain-source voltage: -20V
On-state resistance: 67mΩ
Power dissipation: 1.6W
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2320 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
173+ | 0.41 EUR |
190+ | 0.38 EUR |
205+ | 0.35 EUR |
224+ | 0.32 EUR |
237+ | 0.3 EUR |
BSO220N03MDGXUMA1 |
![]() |
Hersteller: INFINEON TECHNOLOGIES
BSO220N03MDGXUMA1 SMD N channel transistors
BSO220N03MDGXUMA1 SMD N channel transistors
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
BSO301SPHXUMA1 |
![]() |
Hersteller: INFINEON TECHNOLOGIES
BSO301SPHXUMA1 SMD P channel transistors
BSO301SPHXUMA1 SMD P channel transistors
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
BSO303SPHXUMA1 |
![]() |
Hersteller: INFINEON TECHNOLOGIES
BSO303SPHXUMA1 SMD P channel transistors
BSO303SPHXUMA1 SMD P channel transistors
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
BSO613SPVGXUMA1 |
![]() |
Hersteller: INFINEON TECHNOLOGIES
BSO613SPVGXUMA1 SMD P channel transistors
BSO613SPVGXUMA1 SMD P channel transistors
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
BSP125H6327XTSA1 |
![]() |
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 0.12A; 1.8W; SOT223
Type of transistor: N-MOSFET
Case: SOT223
Technology: SIPMOS™
Mounting: SMD
Drain-source voltage: 600V
Drain current: 0.12A
On-state resistance: 45Ω
Power dissipation: 1.8W
Gate-source voltage: ±20V
Polarisation: unipolar
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 0.12A; 1.8W; SOT223
Type of transistor: N-MOSFET
Case: SOT223
Technology: SIPMOS™
Mounting: SMD
Drain-source voltage: 600V
Drain current: 0.12A
On-state resistance: 45Ω
Power dissipation: 1.8W
Gate-source voltage: ±20V
Polarisation: unipolar
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 965 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
67+ | 1.07 EUR |
99+ | 0.73 EUR |
153+ | 0.47 EUR |
162+ | 0.44 EUR |
200+ | 0.43 EUR |
BSP129H6327XTSA1 |
![]() |
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 240V; 0.05A; 1.8W; SOT223
Type of transistor: N-MOSFET
Case: SOT223
Technology: SIPMOS™
Mounting: SMD
Drain-source voltage: 240V
Drain current: 50mA
On-state resistance: 6.5Ω
Power dissipation: 1.8W
Gate-source voltage: ±20V
Polarisation: unipolar
Kind of channel: depletion
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 240V; 0.05A; 1.8W; SOT223
Type of transistor: N-MOSFET
Case: SOT223
Technology: SIPMOS™
Mounting: SMD
Drain-source voltage: 240V
Drain current: 50mA
On-state resistance: 6.5Ω
Power dissipation: 1.8W
Gate-source voltage: ±20V
Polarisation: unipolar
Kind of channel: depletion
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1543 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
100+ | 0.72 EUR |
116+ | 0.62 EUR |
147+ | 0.49 EUR |
155+ | 0.46 EUR |
200+ | 0.44 EUR |
BSP129H6906XTSA1 |
![]() |
Hersteller: INFINEON TECHNOLOGIES
BSP129H6906XTSA1 SMD N channel transistors
BSP129H6906XTSA1 SMD N channel transistors
auf Bestellung 109 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
72+ | 1 EUR |
109+ | 0.66 EUR |
1000+ | 0.56 EUR |
BSP135H6327XTSA1 |
![]() |
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 0.12A; 1.8W; SOT223
Mounting: SMD
Polarisation: unipolar
Drain current: 0.12A
Power dissipation: 1.8W
Gate-source voltage: ±20V
On-state resistance: 60Ω
Drain-source voltage: 600V
Case: SOT223
Kind of channel: depletion
Type of transistor: N-MOSFET
Technology: SIPMOS™
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 0.12A; 1.8W; SOT223
Mounting: SMD
Polarisation: unipolar
Drain current: 0.12A
Power dissipation: 1.8W
Gate-source voltage: ±20V
On-state resistance: 60Ω
Drain-source voltage: 600V
Case: SOT223
Kind of channel: depletion
Type of transistor: N-MOSFET
Technology: SIPMOS™
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1483 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
52+ | 1.4 EUR |
71+ | 1.01 EUR |
117+ | 0.61 EUR |
124+ | 0.58 EUR |
1000+ | 0.56 EUR |
BSP149H6327XTSA1 |
![]() |
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 0.53A; Idm: 2.6A; 1.8W; SOT223
Type of transistor: N-MOSFET
Case: SOT223
Technology: SIPMOS™
Mounting: SMD
Drain-source voltage: 200V
Drain current: 0.53A
On-state resistance: 3.5Ω
Power dissipation: 1.8W
Gate-source voltage: ±20V
Pulsed drain current: 2.6A
Polarisation: unipolar
Kind of channel: depletion
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 0.53A; Idm: 2.6A; 1.8W; SOT223
Type of transistor: N-MOSFET
Case: SOT223
Technology: SIPMOS™
Mounting: SMD
Drain-source voltage: 200V
Drain current: 0.53A
On-state resistance: 3.5Ω
Power dissipation: 1.8W
Gate-source voltage: ±20V
Pulsed drain current: 2.6A
Polarisation: unipolar
Kind of channel: depletion
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1555 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
49+ | 1.49 EUR |
66+ | 1.1 EUR |
112+ | 0.64 EUR |
118+ | 0.61 EUR |
500+ | 0.58 EUR |
BSP149H6906XTSA1 |
![]() |
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SIPMOS®; unipolar; 200V; 0.53A; Idm: 2.6A
Type of transistor: N-MOSFET
Case: SOT223
Technology: SIPMOS®
Mounting: SMD
Drain-source voltage: 200V
Drain current: 0.53A
On-state resistance: 3.5Ω
Power dissipation: 1.8W
Gate-source voltage: ±20V
Pulsed drain current: 2.6A
Polarisation: unipolar
Kind of channel: depletion
Anzahl je Verpackung: 1000 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SIPMOS®; unipolar; 200V; 0.53A; Idm: 2.6A
Type of transistor: N-MOSFET
Case: SOT223
Technology: SIPMOS®
Mounting: SMD
Drain-source voltage: 200V
Drain current: 0.53A
On-state resistance: 3.5Ω
Power dissipation: 1.8W
Gate-source voltage: ±20V
Pulsed drain current: 2.6A
Polarisation: unipolar
Kind of channel: depletion
Anzahl je Verpackung: 1000 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
BSP170PH6327XTSA1 |
![]() |
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -1.9A; 1.8W; PG-SOT223
Case: PG-SOT223
Type of transistor: P-MOSFET
Technology: SIPMOS™
Mounting: SMD
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -1.9A
On-state resistance: 0.3Ω
Power dissipation: 1.8W
Gate-source voltage: ±20V
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -1.9A; 1.8W; PG-SOT223
Case: PG-SOT223
Type of transistor: P-MOSFET
Technology: SIPMOS™
Mounting: SMD
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -1.9A
On-state resistance: 0.3Ω
Power dissipation: 1.8W
Gate-source voltage: ±20V
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1597 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
61+ | 1.17 EUR |
92+ | 0.78 EUR |
120+ | 0.6 EUR |
235+ | 0.3 EUR |
249+ | 0.29 EUR |
BSP171PH6327XTSA1 |
![]() |
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -1.9A; 1.8W; PG-SOT223
Case: PG-SOT223
Type of transistor: P-MOSFET
Technology: SIPMOS™
Mounting: SMD
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -1.9A
On-state resistance: 0.3Ω
Power dissipation: 1.8W
Gate-source voltage: ±20V
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -1.9A; 1.8W; PG-SOT223
Case: PG-SOT223
Type of transistor: P-MOSFET
Technology: SIPMOS™
Mounting: SMD
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -1.9A
On-state resistance: 0.3Ω
Power dissipation: 1.8W
Gate-source voltage: ±20V
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1933 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
75+ | 0.96 EUR |
95+ | 0.76 EUR |
110+ | 0.65 EUR |
197+ | 0.36 EUR |
208+ | 0.34 EUR |
3000+ | 0.33 EUR |
BSP295H6327XTSA1 |
![]() |
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 1.8A; 1.8W; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 1.8W
Case: SOT223
Mounting: SMD
Kind of channel: enhancement
Technology: SIPMOS™
On-state resistance: 0.3Ω
Drain current: 1.8A
Drain-source voltage: 60V
Gate-source voltage: ±20V
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 1.8A; 1.8W; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 1.8W
Case: SOT223
Mounting: SMD
Kind of channel: enhancement
Technology: SIPMOS™
On-state resistance: 0.3Ω
Drain current: 1.8A
Drain-source voltage: 60V
Gate-source voltage: ±20V
Anzahl je Verpackung: 1 Stücke
auf Bestellung 358 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
63+ | 1.14 EUR |
84+ | 0.85 EUR |
176+ | 0.41 EUR |
186+ | 0.38 EUR |
3000+ | 0.37 EUR |
BSP296NH6327XTSA1 |
![]() |
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 1.2A; 1.8W; SOT223
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 1.2A
Power dissipation: 1.8W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 0.8Ω
Mounting: SMD
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 1.2A; 1.8W; SOT223
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 1.2A
Power dissipation: 1.8W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 0.8Ω
Mounting: SMD
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1620 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
179+ | 0.4 EUR |
205+ | 0.35 EUR |
224+ | 0.32 EUR |
240+ | 0.3 EUR |
252+ | 0.28 EUR |
266+ | 0.27 EUR |
BSP297H6327XTSA1 |
![]() |
Hersteller: INFINEON TECHNOLOGIES
BSP297H6327XTSA1 SMD N channel transistors
BSP297H6327XTSA1 SMD N channel transistors
auf Bestellung 793 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
66+ | 1.09 EUR |
162+ | 0.44 EUR |
172+ | 0.42 EUR |
BSP315PH6327XTSA1 |
![]() |
Hersteller: INFINEON TECHNOLOGIES
BSP315PH6327XTSA1 SMD P channel transistors
BSP315PH6327XTSA1 SMD P channel transistors
auf Bestellung 1684 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
62+ | 1.15 EUR |
212+ | 0.34 EUR |
225+ | 0.32 EUR |
BSP316PH6327XTSA1 |
![]() |
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -0.68A; 1.8W; PG-SOT223
Kind of channel: enhancement
Case: PG-SOT223
Type of transistor: P-MOSFET
Technology: SIPMOS™
Mounting: SMD
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -680mA
On-state resistance: 1.8Ω
Power dissipation: 1.8W
Gate-source voltage: ±20V
Anzahl je Verpackung: 1 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -0.68A; 1.8W; PG-SOT223
Kind of channel: enhancement
Case: PG-SOT223
Type of transistor: P-MOSFET
Technology: SIPMOS™
Mounting: SMD
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -680mA
On-state resistance: 1.8Ω
Power dissipation: 1.8W
Gate-source voltage: ±20V
Anzahl je Verpackung: 1 Stücke
auf Bestellung 730 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
136+ | 0.53 EUR |
169+ | 0.42 EUR |
186+ | 0.39 EUR |
211+ | 0.34 EUR |
224+ | 0.32 EUR |
BSP317PH6327XTSA1 |
![]() |
Hersteller: INFINEON TECHNOLOGIES
BSP317PH6327XTSA1 SMD P channel transistors
BSP317PH6327XTSA1 SMD P channel transistors
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
BSP322PH6327XTSA1 |
![]() |
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -1A; 1.8W; PG-SOT223
Drain-source voltage: -100V
Drain current: -1A
On-state resistance: 0.8Ω
Type of transistor: P-MOSFET
Power dissipation: 1.8W
Polarisation: unipolar
Technology: SIPMOS™
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: SMD
Case: PG-SOT223
Anzahl je Verpackung: 1 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -1A; 1.8W; PG-SOT223
Drain-source voltage: -100V
Drain current: -1A
On-state resistance: 0.8Ω
Type of transistor: P-MOSFET
Power dissipation: 1.8W
Polarisation: unipolar
Technology: SIPMOS™
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: SMD
Case: PG-SOT223
Anzahl je Verpackung: 1 Stücke
auf Bestellung 881 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
65+ | 1.1 EUR |
109+ | 0.66 EUR |
121+ | 0.59 EUR |
153+ | 0.47 EUR |
162+ | 0.44 EUR |
BSP324H6327XTSA1 |
![]() |
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 0.17A; 1.8W; SOT223
Mounting: SMD
Case: SOT223
Drain-source voltage: 400V
Drain current: 0.17A
On-state resistance: 25Ω
Type of transistor: N-MOSFET
Power dissipation: 1.8W
Polarisation: unipolar
Technology: SIPMOS™
Kind of channel: enhancement
Gate-source voltage: ±20V
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 0.17A; 1.8W; SOT223
Mounting: SMD
Case: SOT223
Drain-source voltage: 400V
Drain current: 0.17A
On-state resistance: 25Ω
Type of transistor: N-MOSFET
Power dissipation: 1.8W
Polarisation: unipolar
Technology: SIPMOS™
Kind of channel: enhancement
Gate-source voltage: ±20V
Anzahl je Verpackung: 1 Stücke
auf Bestellung 300 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
75+ | 0.96 EUR |
100+ | 0.72 EUR |
113+ | 0.63 EUR |
155+ | 0.46 EUR |
163+ | 0.44 EUR |
500+ | 0.42 EUR |
BSP372NH6327XTSA1 |
![]() |
Hersteller: INFINEON TECHNOLOGIES
BSP372NH6327XTSA1 SMD N channel transistors
BSP372NH6327XTSA1 SMD N channel transistors
auf Bestellung 521 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
61+ | 1.18 EUR |
141+ | 0.51 EUR |
148+ | 0.48 EUR |
BSP373NH6327XTSA1 |
![]() |
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 1.8A; 1.8W; SOT223
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Technology: OptiMOS™
On-state resistance: 0.24Ω
Drain current: 1.8A
Power dissipation: 1.8W
Gate-source voltage: ±20V
Case: SOT223
Drain-source voltage: 100V
Polarisation: unipolar
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 1.8A; 1.8W; SOT223
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Technology: OptiMOS™
On-state resistance: 0.24Ω
Drain current: 1.8A
Power dissipation: 1.8W
Gate-source voltage: ±20V
Case: SOT223
Drain-source voltage: 100V
Polarisation: unipolar
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1920 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
46+ | 1.56 EUR |
97+ | 0.74 EUR |
106+ | 0.67 EUR |
139+ | 0.52 EUR |
147+ | 0.49 EUR |
5000+ | 0.48 EUR |
BSP452 |
![]() |
Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 700mA; Ch: 1; N-Channel; SMD; SOT223-3
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 0.7A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: SOT223-3
On-state resistance: 0.16Ω
Technology: Classic PROFET
Output voltage: 40V
Anzahl je Verpackung: 1 Stücke
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 700mA; Ch: 1; N-Channel; SMD; SOT223-3
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 0.7A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: SOT223-3
On-state resistance: 0.16Ω
Technology: Classic PROFET
Output voltage: 40V
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2752 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
18+ | 4.2 EUR |
43+ | 1.69 EUR |
45+ | 1.6 EUR |
2000+ | 1.54 EUR |
BSP50H6327XTSA1 |
![]() |
Hersteller: INFINEON TECHNOLOGIES
BSP50H6327XTSA1 NPN SMD Darlington transistors
BSP50H6327XTSA1 NPN SMD Darlington transistors
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
BSP603S2L |
Hersteller: INFINEON TECHNOLOGIES
BSP603S2L SMD N channel transistors
BSP603S2L SMD N channel transistors
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
BSP613PH6327XTSA1 |
![]() |
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -2.9A; 1.8W; PG-SOT223
Type of transistor: P-MOSFET
Technology: SIPMOS™
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -2.9A
Power dissipation: 1.8W
Case: PG-SOT223
Gate-source voltage: ±20V
On-state resistance: 0.13Ω
Mounting: SMD
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -2.9A; 1.8W; PG-SOT223
Type of transistor: P-MOSFET
Technology: SIPMOS™
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -2.9A
Power dissipation: 1.8W
Case: PG-SOT223
Gate-source voltage: ±20V
On-state resistance: 0.13Ω
Mounting: SMD
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 798 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
41+ | 1.74 EUR |
96+ | 0.75 EUR |
BSP61H6327XTSA1 |
![]() |
Hersteller: INFINEON TECHNOLOGIES
BSP61H6327XTSA1 PNP SMD Darlington transistors
BSP61H6327XTSA1 PNP SMD Darlington transistors
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
BSP742R |
![]() |
Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 400mA; Ch: 1; N-Channel; SMD; SO8
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 0.4A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: SO8
On-state resistance: 0.25Ω
Technology: Classic PROFET
Output voltage: 40V
Anzahl je Verpackung: 1 Stücke
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 400mA; Ch: 1; N-Channel; SMD; SO8
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 0.4A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: SO8
On-state resistance: 0.25Ω
Technology: Classic PROFET
Output voltage: 40V
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1739 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
22+ | 3.39 EUR |
33+ | 2.22 EUR |
54+ | 1.33 EUR |
57+ | 1.26 EUR |
2500+ | 1.22 EUR |
BSP742RIXUMA1 |
![]() |
Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 400mA; Ch: 1; N-Channel; SMD; SO8; reel
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 0.4A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: SO8
On-state resistance: 0.25Ω
Kind of package: reel
Technology: Classic PROFET
Anzahl je Verpackung: 2500 Stücke
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 400mA; Ch: 1; N-Channel; SMD; SO8; reel
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 0.4A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: SO8
On-state resistance: 0.25Ω
Kind of package: reel
Technology: Classic PROFET
Anzahl je Verpackung: 2500 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
BSP742T |
Hersteller: INFINEON TECHNOLOGIES
BSP742T Power switches - integrated circuits
BSP742T Power switches - integrated circuits
auf Bestellung 1754 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
33+ | 2.22 EUR |
50+ | 1.43 EUR |
53+ | 1.36 EUR |
BSP752R |
![]() |
Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 1.3A; Ch: 1; N-Channel; SMD; SO8
Mounting: SMD
Kind of output: N-Channel
Type of integrated circuit: power switch
Case: SO8
On-state resistance: 0.15Ω
Number of channels: 1
Output current: 1.3A
Output voltage: 52V
Technology: Classic PROFET
Kind of integrated circuit: high-side
Anzahl je Verpackung: 1 Stücke
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 1.3A; Ch: 1; N-Channel; SMD; SO8
Mounting: SMD
Kind of output: N-Channel
Type of integrated circuit: power switch
Case: SO8
On-state resistance: 0.15Ω
Number of channels: 1
Output current: 1.3A
Output voltage: 52V
Technology: Classic PROFET
Kind of integrated circuit: high-side
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2565 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
19+ | 3.86 EUR |
29+ | 2.55 EUR |
43+ | 1.67 EUR |
46+ | 1.57 EUR |
1000+ | 1.52 EUR |
BSP752T |
![]() |
Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 1.3A; Ch: 1; N-Channel; SMD; SO8
Mounting: SMD
On-state resistance: 0.15Ω
Number of channels: 1
Output current: 1.3A
Output voltage: 52V
Type of integrated circuit: power switch
Technology: Classic PROFET
Case: SO8
Kind of output: N-Channel
Kind of integrated circuit: high-side
Anzahl je Verpackung: 2500 Stücke
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 1.3A; Ch: 1; N-Channel; SMD; SO8
Mounting: SMD
On-state resistance: 0.15Ω
Number of channels: 1
Output current: 1.3A
Output voltage: 52V
Type of integrated circuit: power switch
Technology: Classic PROFET
Case: SO8
Kind of output: N-Channel
Kind of integrated circuit: high-side
Anzahl je Verpackung: 2500 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
BSP752TXUMA1 |
![]() |
Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 1.3A; Ch: 1; N-Channel; SMD; SO8
Mounting: SMD
On-state resistance: 0.15Ω
Number of channels: 1
Output current: 1.3A
Output voltage: 52V
Type of integrated circuit: power switch
Technology: Classic PROFET
Case: SO8
Kind of output: N-Channel
Kind of integrated circuit: high-side
Anzahl je Verpackung: 1 Stücke
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 1.3A; Ch: 1; N-Channel; SMD; SO8
Mounting: SMD
On-state resistance: 0.15Ω
Number of channels: 1
Output current: 1.3A
Output voltage: 52V
Type of integrated circuit: power switch
Technology: Classic PROFET
Case: SO8
Kind of output: N-Channel
Kind of integrated circuit: high-side
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
BSP762T |
![]() |
Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 2A; Ch: 1; N-Channel; SMD; SO8
Type of integrated circuit: power switch
Output current: 2A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: SO8
On-state resistance: 70mΩ
Output voltage: 40V
Technology: Classic PROFET
Kind of integrated circuit: high-side
Anzahl je Verpackung: 1 Stücke
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 2A; Ch: 1; N-Channel; SMD; SO8
Type of integrated circuit: power switch
Output current: 2A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: SO8
On-state resistance: 70mΩ
Output voltage: 40V
Technology: Classic PROFET
Kind of integrated circuit: high-side
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2439 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
18+ | 4.2 EUR |
41+ | 1.77 EUR |
43+ | 1.67 EUR |
1000+ | 1.63 EUR |
2500+ | 1.62 EUR |
BSP76E6433 |
![]() |
Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 1.4A; Ch: 1; N-Channel; SMD; PG-SOT223-4
Mounting: SMD
Technology: HITFET®
Kind of integrated circuit: low-side
Kind of output: N-Channel
Case: PG-SOT223-4
Type of integrated circuit: power switch
Number of channels: 1
Output current: 1.4A
Output voltage: 42V
Anzahl je Verpackung: 1 Stücke
Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 1.4A; Ch: 1; N-Channel; SMD; PG-SOT223-4
Mounting: SMD
Technology: HITFET®
Kind of integrated circuit: low-side
Kind of output: N-Channel
Case: PG-SOT223-4
Type of integrated circuit: power switch
Number of channels: 1
Output current: 1.4A
Output voltage: 42V
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2201 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
37+ | 1.97 EUR |
50+ | 1.43 EUR |
69+ | 1.04 EUR |
73+ | 0.99 EUR |
BSP772T |
![]() |
Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 2.6A; Ch: 1; N-Channel; SMD; SO8
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 2.6A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: SO8
On-state resistance: 50mΩ
Supply voltage: 5...34V DC
Technology: Classic PROFET
Anzahl je Verpackung: 1 Stücke
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 2.6A; Ch: 1; N-Channel; SMD; SO8
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 2.6A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: SO8
On-state resistance: 50mΩ
Supply voltage: 5...34V DC
Technology: Classic PROFET
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1673 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
16+ | 4.53 EUR |
32+ | 2.25 EUR |
34+ | 2.12 EUR |
500+ | 2.04 EUR |
BSP77E6433 |
![]() |
Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 2.17A; Ch: 1; N-Channel; SMD; SOT223-3
Type of integrated circuit: power switch
Kind of integrated circuit: low-side
Output current: 2.17A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: SOT223-3
On-state resistance: 70mΩ
Technology: HITFET®
Output voltage: 42V
Anzahl je Verpackung: 1 Stücke
Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 2.17A; Ch: 1; N-Channel; SMD; SOT223-3
Type of integrated circuit: power switch
Kind of integrated circuit: low-side
Output current: 2.17A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: SOT223-3
On-state resistance: 70mΩ
Technology: HITFET®
Output voltage: 42V
Anzahl je Verpackung: 1 Stücke
auf Bestellung 3057 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
23+ | 3.23 EUR |
35+ | 2.09 EUR |
62+ | 1.16 EUR |
65+ | 1.1 EUR |
2000+ | 1.06 EUR |
BSP78 |
![]() |
Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 3A; Ch: 1; N-Channel; SMD; SOT223-3
Type of integrated circuit: power switch
Kind of integrated circuit: low-side
Output current: 3A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: SOT223-3
On-state resistance: 35mΩ
Technology: HITFET®
Output voltage: 42V
Anzahl je Verpackung: 1 Stücke
Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 3A; Ch: 1; N-Channel; SMD; SOT223-3
Type of integrated circuit: power switch
Kind of integrated circuit: low-side
Output current: 3A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: SOT223-3
On-state resistance: 35mΩ
Technology: HITFET®
Output voltage: 42V
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2569 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
21+ | 3.47 EUR |
32+ | 2.27 EUR |
53+ | 1.37 EUR |
55+ | 1.3 EUR |
1000+ | 1.27 EUR |
2000+ | 1.26 EUR |
BSP88H6327XTSA1 |
![]() |
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 240V; 0.35A; 1.8W; SOT223
Mounting: SMD
Type of transistor: N-MOSFET
Technology: SIPMOS™
Polarisation: unipolar
Drain-source voltage: 240V
Drain current: 0.35A
Case: SOT223
On-state resistance: 6Ω
Gate-source voltage: ±20V
Power dissipation: 1.8W
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 240V; 0.35A; 1.8W; SOT223
Mounting: SMD
Type of transistor: N-MOSFET
Technology: SIPMOS™
Polarisation: unipolar
Drain-source voltage: 240V
Drain current: 0.35A
Case: SOT223
On-state resistance: 6Ω
Gate-source voltage: ±20V
Power dissipation: 1.8W
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 127 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
100+ | 0.72 EUR |
127+ | 0.56 EUR |
131+ | 0.54 EUR |
BSP89H6327XTSA1 |
![]() |
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 240V; 0.35A; 1.8W; SOT223
Type of transistor: N-MOSFET
Technology: SIPMOS™
Polarisation: unipolar
Drain-source voltage: 240V
Drain current: 0.35A
Power dissipation: 1.8W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 6Ω
Mounting: SMD
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 240V; 0.35A; 1.8W; SOT223
Type of transistor: N-MOSFET
Technology: SIPMOS™
Polarisation: unipolar
Drain-source voltage: 240V
Drain current: 0.35A
Power dissipation: 1.8W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 6Ω
Mounting: SMD
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 428 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
122+ | 0.59 EUR |
152+ | 0.47 EUR |
174+ | 0.41 EUR |
210+ | 0.34 EUR |
BSP92PH6327XTSA1 |
![]() |
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -250V; -0.26A; 1.8W; PG-SOT223
Drain-source voltage: -250V
Drain current: -0.26A
On-state resistance: 12Ω
Type of transistor: P-MOSFET
Power dissipation: 1.8W
Polarisation: unipolar
Technology: SIPMOS™
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: SMD
Case: PG-SOT223
Anzahl je Verpackung: 1 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -250V; -0.26A; 1.8W; PG-SOT223
Drain-source voltage: -250V
Drain current: -0.26A
On-state resistance: 12Ω
Type of transistor: P-MOSFET
Power dissipation: 1.8W
Polarisation: unipolar
Technology: SIPMOS™
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: SMD
Case: PG-SOT223
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2907 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
87+ | 0.83 EUR |
129+ | 0.55 EUR |
168+ | 0.43 EUR |
275+ | 0.26 EUR |
291+ | 0.25 EUR |
3000+ | 0.24 EUR |
BSR202NL6327HTSA1 |
![]() |
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 3.8A; 0.5W; SC59
Case: SC59
Mounting: SMD
Type of transistor: N-MOSFET
Technology: OptiMOS™ 2
Polarisation: unipolar
On-state resistance: 21mΩ
Power dissipation: 0.5W
Drain current: 3.8A
Gate-source voltage: ±12V
Drain-source voltage: 20V
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 3.8A; 0.5W; SC59
Case: SC59
Mounting: SMD
Type of transistor: N-MOSFET
Technology: OptiMOS™ 2
Polarisation: unipolar
On-state resistance: 21mΩ
Power dissipation: 0.5W
Drain current: 3.8A
Gate-source voltage: ±12V
Drain-source voltage: 20V
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2763 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
105+ | 0.69 EUR |
138+ | 0.52 EUR |
183+ | 0.39 EUR |
258+ | 0.28 EUR |
274+ | 0.26 EUR |
1000+ | 0.25 EUR |
BSR302NL6327HTSA1 |
![]() |
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 3.7A; 0.5W; SC59
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Technology: OptiMOS™ 2
Polarisation: unipolar
On-state resistance: 36mΩ
Power dissipation: 0.5W
Drain current: 3.7A
Gate-source voltage: ±20V
Drain-source voltage: 30V
Case: SC59
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 3.7A; 0.5W; SC59
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Technology: OptiMOS™ 2
Polarisation: unipolar
On-state resistance: 36mΩ
Power dissipation: 0.5W
Drain current: 3.7A
Gate-source voltage: ±20V
Drain-source voltage: 30V
Case: SC59
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
BSR315PH6327XTSA1 |
![]() |
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -0.49A; 0.5W; SC59
Type of transistor: P-MOSFET
Technology: SIPMOS™
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -0.49A
Power dissipation: 0.5W
Case: SC59
Gate-source voltage: ±20V
On-state resistance: 1.3Ω
Mounting: SMD
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -0.49A; 0.5W; SC59
Type of transistor: P-MOSFET
Technology: SIPMOS™
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -0.49A
Power dissipation: 0.5W
Case: SC59
Gate-source voltage: ±20V
On-state resistance: 1.3Ω
Mounting: SMD
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2400 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
107+ | 0.67 EUR |
145+ | 0.49 EUR |
191+ | 0.38 EUR |
341+ | 0.21 EUR |
360+ | 0.2 EUR |