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CY7C65213-32LTXI INFINEON TECHNOLOGIES Infineon-CY7C65213.pdf Category: USB interfaces - integrated circuits
Description: IC: USB interface; GPIO x8,UART; USB controller; Full Speed
Type of integrated circuit: USB interface
Interface: GPIO x8; UART
Kind of integrated circuit: USB controller
USB speed: Full Speed
Data transfer rate: 12Mbps
Supply voltage: 1.71...5.5V DC
Kind of package: in-tray; tube
Case: QFN32
Integrated circuit features: bridge
Mounting: SMD
Operating temperature: -40...85°C
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CY7C65213A-32LTXI INFINEON TECHNOLOGIES Infineon-CY7C65213.pdf Category: USB interfaces - integrated circuits
Description: IC: USB interface; GPIO x8,UART; USB controller; Full Speed
Type of integrated circuit: USB interface
Interface: GPIO x8; UART
Kind of integrated circuit: USB controller
USB speed: Full Speed
Data transfer rate: 12Mbps
Supply voltage: 1.71...5.5V DC
Kind of package: in-tray; tube
Case: QFN32
Integrated circuit features: bridge
Mounting: SMD
Operating temperature: -40...85°C
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CY7C65213-32LTXIT INFINEON TECHNOLOGIES Infineon-CY7C65213.pdf Category: USB interfaces - integrated circuits
Description: IC: USB interface; GPIO x8,UART; USB controller; Full Speed
Type of integrated circuit: USB interface
Interface: GPIO x8; UART
Kind of integrated circuit: USB controller
USB speed: Full Speed
Data transfer rate: 12Mbps
Supply voltage: 1.71...5.5V DC
Kind of package: reel; tape
Case: QFN32
Integrated circuit features: bridge
Mounting: SMD
Operating temperature: -40...85°C
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CY7C65223-24LTXIT CY7C65223-24LTXIT INFINEON TECHNOLOGIES Infineon-CY7C65223.pdf Category: USB interfaces - integrated circuits
Description: IC: USB interface; GPIO x4,UART; USB controller; Full Speed
Type of integrated circuit: USB interface
Interface: GPIO x4; UART
Kind of integrated circuit: USB controller
USB speed: Full Speed
Data transfer rate: 12Mbps
Supply voltage: 1.71...5.5V DC
Kind of package: reel; tape
Case: QFN24
Integrated circuit features: bridge
Mounting: SMD
Operating temperature: -40...85°C
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CY7C65223D-32LTXI INFINEON TECHNOLOGIES Infineon-CY7C65223D-32LTX.pdf Category: USB interfaces - integrated circuits
Description: IC: USB interface; GPIO x4,UART; USB controller; Full Speed
Type of integrated circuit: USB interface
Case: QFN32
Mounting: SMD
Interface: GPIO x4; UART
Kind of integrated circuit: USB controller
Supply voltage: 1.71...5.5V DC
Data transfer rate: 12Mbps
Operating temperature: -40...85°C
Integrated circuit features: bridge
Kind of core: 8-bit
Kind of package: in-tray; tube
USB speed: Full Speed
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CY7C65223D-32LTXIT INFINEON TECHNOLOGIES Infineon-CY7C65223D-32LTX.pdf Category: USB interfaces - integrated circuits
Description: IC: USB interface; GPIO x4,UART; USB controller; Full Speed
Type of integrated circuit: USB interface
Interface: GPIO x4; UART
Kind of integrated circuit: USB controller
USB speed: Full Speed
Data transfer rate: 12Mbps
Supply voltage: 1.71...5.5V DC
Kind of package: reel; tape
Case: QFN32
Integrated circuit features: bridge
Mounting: SMD
Operating temperature: -40...85°C
Kind of core: 8-bit
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CY7C65215-32LTXIT INFINEON TECHNOLOGIES Infineon-CY7C65215_CY7C65215A.pdf Category: USB interfaces - integrated circuits
Description: IC: USB interface; GPIO x17,I2C,SPI,UART; USB controller; QFN32
Type of integrated circuit: USB interface
Interface: GPIO x17; I2C; SPI; UART
Kind of integrated circuit: USB controller
USB speed: Full Speed
Data transfer rate: 12Mbps
Supply voltage: 1.71...5.5V DC
Kind of package: reel; tape
Case: QFN32
Integrated circuit features: bridge
Mounting: SMD
Operating temperature: -40...85°C
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CY7C65211-24LTXIT CY7C65211-24LTXIT INFINEON TECHNOLOGIES Infineon-CY7C65211_USB.pdf Category: USB interfaces - integrated circuits
Description: IC: USB interface; GPIO x10,I2C,SPI,UART; USB controller; QFN24
Type of integrated circuit: USB interface
Interface: GPIO x10; I2C; SPI; UART
Kind of integrated circuit: USB controller
USB speed: Full Speed
Data transfer rate: 12Mbps
Supply voltage: 1.71...5.5V DC
Kind of package: reel; tape
Case: QFN24
Integrated circuit features: bridge
Mounting: SMD
Operating temperature: -40...85°C
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CY7C65211A-24LTXI CY7C65211A-24LTXI INFINEON TECHNOLOGIES Infineon-CY7C65211_USB.pdf Category: USB interfaces - integrated circuits
Description: IC: USB interface; GPIO x10,I2C,SPI,UART; USB controller; QFN24
Type of integrated circuit: USB interface
Interface: GPIO x10; I2C; SPI; UART
Kind of integrated circuit: USB controller
USB speed: Full Speed
Data transfer rate: 12Mbps
Supply voltage: 1.71...5.5V DC
Kind of package: in-tray; tube
Case: QFN24
Integrated circuit features: bridge
Mounting: SMD
Operating temperature: -40...85°C
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CY7C65215A-32LTXI INFINEON TECHNOLOGIES Infineon-CY7C65215_CY7C65215A.pdf Category: USB interfaces - integrated circuits
Description: IC: USB interface; GPIO x17,I2C,SPI,UART; USB controller; QFN32
Type of integrated circuit: USB interface
Interface: GPIO x17; I2C; SPI; UART
Kind of integrated circuit: USB controller
USB speed: Full Speed
Data transfer rate: 12Mbps
Supply voltage: 1.71...5.5V DC
Kind of package: in-tray; tube
Case: QFN32
Integrated circuit features: bridge
Mounting: SMD
Operating temperature: -40...85°C
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CY7C65217A-24LTXI CY7C65217A-24LTXI INFINEON TECHNOLOGIES Infineon-65210_65217_65210A_65217A.pdf Category: USB interfaces - integrated circuits
Description: IC: USB interface; GPIO x9,I2C,UART; USB controller; Full Speed
Type of integrated circuit: USB interface
Interface: GPIO x9; I2C; UART
Kind of integrated circuit: USB controller
USB speed: Full Speed
Data transfer rate: 12Mbps
Supply voltage: 1.71...5.5V DC
Kind of package: in-tray; tube
Case: QFN24
Mounting: SMD
Operating temperature: -40...85°C
Number of ports: 1
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TLE4946KHTSA1 INFINEON TECHNOLOGIES fundamentals-of-power-semiconductors Category: Hall Sensors
Description: Sensor: Hall; latch; SC59; -19÷19mT; Usup: 2.7÷18VDC; SMT
Type of sensor: Hall
Kind of sensor: latch
Mounting: SMT
Operating temperature: -40...150°C
Supply voltage: 2.7...18V DC
Range of detectable magnetic field: -19...19mT
Case: SC59
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BFP193E6327 BFP193E6327 INFINEON TECHNOLOGIES BFP193E6327-dte.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; RF; 12V; 80mA; 0.58W; SOT143
Type of transistor: NPN
Collector current: 80mA
Mounting: SMD
Collector-emitter voltage: 12V
Power dissipation: 0.58W
Polarisation: bipolar
Kind of transistor: RF
Current gain: 70...140
Kind of package: reel; tape
Case: SOT143
Frequency: 8GHz
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BFP193WH6327 BFP193WH6327 INFINEON TECHNOLOGIES BFP193WH6327-dte.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; RF; 20V; 80mA; 0.58W; SOT343
Type of transistor: NPN
Collector current: 80mA
Mounting: SMD
Collector-emitter voltage: 20V
Power dissipation: 0.58W
Polarisation: bipolar
Kind of transistor: RF
Kind of package: reel; tape
Case: SOT343
Frequency: 6GHz
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CY7C1021D-10VXI CY7C1021D-10VXI INFINEON TECHNOLOGIES download description Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 1MbSRAM; 64kx16bit; 4.5÷5.5V; 10ns; SOJ44; 400mils
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 1Mb SRAM
Memory organisation: 64kx16bit
Operating voltage: 4.5...5.5V
Access time: 10ns
Case: SOJ44
Kind of interface: parallel
Mounting: SMD
IC width: 400mils
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IRLR9343TRPBF IRLR9343TRPBF INFINEON TECHNOLOGIES irlr9343pbf.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -55V; -20A; 79W; DPAK
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -55V
Drain current: -20A
Power dissipation: 79W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Features of semiconductor devices: logic level
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IRLR3105TRPBF IRLR3105TRPBF INFINEON TECHNOLOGIES irlr3105pbf.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 25A; 57W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 25A
Power dissipation: 57W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Features of semiconductor devices: logic level
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IRLR8103VTRPBF IRLR8103VTRPBF INFINEON TECHNOLOGIES irlr8103vpbf.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 89A; 89W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 89A
Power dissipation: 89W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Features of semiconductor devices: logic level
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BSS308PEH6327XTSA1 BSS308PEH6327XTSA1 INFINEON TECHNOLOGIES BSS308PEH6327XTSA1-DTE.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -2A; 0.5W; PG-SOT23
Type of transistor: P-MOSFET
Technology: OptiMOS™ P3
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -2A
Power dissipation: 0.5W
Case: PG-SOT23
Gate-source voltage: ±20V
On-state resistance: 80mΩ
Mounting: SMD
Kind of channel: enhancement
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IRS2113MTRPBF INFINEON TECHNOLOGIES irs2113mpbf.pdf?fileId=5546d462533600a40153567676a227b7 Category: MOSFET/IGBT drivers
Description: IC: driver
Type of integrated circuit: driver
Mounting: SMD
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IRS2118SPBF IRS2118SPBF INFINEON TECHNOLOGIES irs2117pbf.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,gate driver; SO8; 625mW
Type of integrated circuit: driver
Topology: single transistor
Kind of integrated circuit: gate driver; high-side
Case: SO8
Output current: -600...290mA
Power: 625mW
Number of channels: 1
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 0.2µs
Turn-off time: 140ns
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BTS70121EPAXUMA1 BTS70121EPAXUMA1 INFINEON TECHNOLOGIES Infineon-BTS7012-1EPA-DataSheet-v01_03-EN.pdf?fileId=5546d462636cc8fb0163fe8fb67008c2 Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 8.5A; Ch: 1; N-Channel; SMD; reel,tape
Type of integrated circuit: power switch
On-state resistance: 21.5mΩ
Mounting: SMD
Supply voltage: 4.1...28V DC
Output current: 8.5A
Kind of output: N-Channel
Operating temperature: -40...150°C
Technology: PROFET™+2
Kind of package: reel; tape
Case: PG-TSDSO-14
Kind of integrated circuit: high-side
Number of channels: 1
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BTS70061EPPXUMA1 INFINEON TECHNOLOGIES BTS70061EPP.pdf Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 12.5A; Ch: 1; N-Channel; SMD; reel,tape
Type of integrated circuit: power switch
On-state resistance: 6.6mΩ
Mounting: SMD
Supply voltage: 4.1...28V DC
Output current: 12.5A
Kind of output: N-Channel
Operating temperature: -40...150°C
Technology: High Current PROFET
Kind of package: reel; tape
Case: PG-TSDSO-14
Kind of integrated circuit: high-side
Number of channels: 1
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BTS70401EPAXUMA1 INFINEON TECHNOLOGIES BTS70401EPA.pdf Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 4.5A; Ch: 1; N-Channel; SMD; reel,tape
Type of integrated circuit: power switch
On-state resistance: 36mΩ
Mounting: SMD
Supply voltage: 4.1...28V DC
Output current: 4.5A
Kind of output: N-Channel
Operating temperature: -40...150°C
Technology: PROFET™+2
Kind of package: reel; tape
Case: PG-TSDSO-14
Kind of integrated circuit: high-side
Number of channels: 1
Produkt ist nicht verfügbar
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BTS70021EPPXUMA1 INFINEON TECHNOLOGIES BTS7002-1EPP_v1.03_4-29-19.pdf Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 21A; Ch: 1; N-Channel; SMD; PG-TSDSO-14
Type of integrated circuit: power switch
On-state resistance: 2.6mΩ
Mounting: SMD
Supply voltage: 4.1...28V DC
Output current: 21A
Kind of output: N-Channel
Operating temperature: -40...150°C
Technology: High Current PROFET
Kind of package: reel; tape
Case: PG-TSDSO-14
Kind of integrated circuit: high-side
Number of channels: 1
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BTS70802EPAXUMA1 INFINEON TECHNOLOGIES Infineon-BTS7080-2EPA-DS-v01_00-EN.pdf?fileId=5546d4625e763904015e941bf21e2dbe Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 3A; Ch: 2; N-Channel; SMD; PG-TSDSO-14
Type of integrated circuit: power switch
On-state resistance: 39.6mΩ
Mounting: SMD
Supply voltage: 4.1...28V DC
Output current: 3A
Kind of output: N-Channel
Operating temperature: -40...150°C
Technology: PROFET™+2
Kind of package: reel; tape
Case: PG-TSDSO-14
Kind of integrated circuit: high-side
Number of channels: 2
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BTS70402EPAXUMA1 INFINEON TECHNOLOGIES Infineon-BTS7040-2EPA-DS-v01_00-EN.pdf?fileId=5546d4625e763904015e9412cf6e2dbb Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 3.5A; Ch: 2; N-Channel; SMD; reel,tape
Type of integrated circuit: power switch
On-state resistance: 36mΩ
Mounting: SMD
Supply voltage: 4.1...28V DC
Output current: 3.5A
Kind of output: N-Channel
Operating temperature: -40...150°C
Technology: PROFET™+2
Kind of package: reel; tape
Case: PG-TSDSO-14
Kind of integrated circuit: high-side
Number of channels: 2
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BTS72002EPAXUMA1 INFINEON TECHNOLOGIES BTS72002EPA.pdf Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 1.2A; Ch: 2; N-Channel; SMD; reel,tape
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 1.2A
Number of channels: 2
Kind of output: N-Channel
Mounting: SMD
Case: PG-TSDSO-14
On-state resistance: 0.12Ω
Kind of package: reel; tape
Supply voltage: 4.1...28V DC
Technology: PROFET™+2
Operating temperature: -40...150°C
Turn-on time: 170µs
Turn-off time: 0.15ms
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BTS72004EPAXUMA1 INFINEON TECHNOLOGIES Infineon-BTS7200-4EPA-DataSheet-v01_00-EN.pdf?fileId=5546d46270c4f93e0170e8a6ea220985 Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 1A; Ch: 4; N-Channel; SMD; PG-TSDSO-14
Type of integrated circuit: power switch
On-state resistance: 66.5mΩ
Mounting: SMD
Supply voltage: 6...18V DC
Output current: 1A
Kind of output: N-Channel
Technology: PROFET™+2
Case: PG-TSDSO-14
Kind of integrated circuit: high-side
Number of channels: 4
Produkt ist nicht verfügbar
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BTS70122EPAXUMA1 INFINEON TECHNOLOGIES Infineon-BTS7012-2EPA-DS-v01_00-EN.pdf?fileId=5546d4625ee5d4cd015f1062883c6ca5 Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 6A; Ch: 2; N-Channel; SMD; PG-TSDSO-14
Type of integrated circuit: power switch
On-state resistance: 21.5mΩ
Mounting: SMD
Supply voltage: 4.1...28V DC
Output current: 6A
Kind of output: N-Channel
Operating temperature: -40...150°C
Technology: PROFET™+2
Kind of package: reel; tape
Case: PG-TSDSO-14
Kind of integrated circuit: high-side
Number of channels: 2
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BTS70202EPAXUMA1 INFINEON TECHNOLOGIES Infineon-BTS7020-2EPA-DS-v01_00-EN.pdf?fileId=5546d4625ee5d4cd015f10627dfb6ca3 Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 5A; Ch: 2; N-Channel; SMD; PG-TSDSO-14
Type of integrated circuit: power switch
On-state resistance: 23.7mΩ
Mounting: SMD
Supply voltage: 4.1...28V DC
Output current: 5A
Kind of output: N-Channel
Operating temperature: -40...150°C
Technology: PROFET™+2
Kind of package: reel; tape
Case: PG-TSDSO-14
Kind of integrated circuit: high-side
Number of channels: 2
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BTS70082EPAXUMA1 INFINEON TECHNOLOGIES Infineon-BTS7008-2EPA-DS-v01_00-EN.pdf?fileId=5546d46258fc0bc101590212356876b1 Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 7.5A; Ch: 2; N-Channel; SMD; -40÷150°C
Type of integrated circuit: power switch
On-state resistance: 9mΩ
Mounting: SMD
Supply voltage: 4.1...28V DC
Output current: 7.5A
Kind of output: N-Channel
Operating temperature: -40...150°C
Integrated circuit features: thermal protection
Application: automotive industry
Case: PG-TSDSO-14
Kind of integrated circuit: high-side
Number of channels: 2
Produkt ist nicht verfügbar
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BTS70081EPAXUMA1 INFINEON TECHNOLOGIES BTS70081EPA.pdf Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 10A; Ch: 1; N-Channel; SMD; PG-TSDSO-14
Type of integrated circuit: power switch
On-state resistance: 16.4mΩ
Mounting: SMD
Supply voltage: 4.1...28V DC
Output current: 10A
Kind of output: N-Channel
Operating temperature: -40...150°C
Technology: PROFET™+2
Kind of package: reel; tape
Case: PG-TSDSO-14
Kind of integrated circuit: high-side
Number of channels: 1
Produkt ist nicht verfügbar
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BTS70081EPPXUMA1 INFINEON TECHNOLOGIES BTS70081EPP.pdf Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 11A; Ch: 1; N-Channel; SMD; PG-TSDSO-14
Type of integrated circuit: power switch
On-state resistance: 8.8mΩ
Mounting: SMD
Supply voltage: 4.1...28V DC
Output current: 11A
Kind of output: N-Channel
Operating temperature: -40...150°C
Technology: High Current PROFET
Kind of package: reel; tape
Case: PG-TSDSO-14
Kind of integrated circuit: high-side
Number of channels: 1
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BTS70102EPAXUMA1 INFINEON TECHNOLOGIES BTS70102EPA.pdf Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 6.5A; Ch: 1; N-Channel; SMD; reel,tape
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 6.5A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: PG-TSDSO-14
On-state resistance: 19.5mΩ
Supply voltage: 4.1...28V DC
Technology: PROFET™+2
Kind of package: reel; tape
Operating temperature: -40...150°C
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BTS71202EPAXUMA1 INFINEON TECHNOLOGIES BTS71202EPA.pdf Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 2A; Ch: 2; N-Channel; SMD; PG-TSDSO-14
Type of integrated circuit: power switch
On-state resistance: 0.11Ω
Mounting: SMD
Supply voltage: 4.1...28V DC
Output current: 2A
Kind of output: N-Channel
Operating temperature: -40...150°C
Technology: PROFET™+2
Kind of package: reel; tape
Case: PG-TSDSO-14
Kind of integrated circuit: high-side
Number of channels: 2
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BTS712N1XUMA1 BTS712N1XUMA1 INFINEON TECHNOLOGIES BTS712N1.pdf Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 1.9÷4.4A; Ch: 4; N-Channel; SMD; SO20
Type of integrated circuit: power switch
On-state resistance: 50mΩ
Mounting: SMD
Supply voltage: 5...34V DC
Output current: 1.9...4.4A
Kind of output: N-Channel
Technology: Classic PROFET
Case: SO20
Kind of integrated circuit: high-side
Number of channels: 4
Produkt ist nicht verfügbar
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D4810N28TVFXPSA1 INFINEON TECHNOLOGIES Infineon-D4810N-DataSheet-v01_00-EN.pdf?fileId=5546d4627112d9d501712b08cde54047 Category: Diodes - others
Description: Diode: hockey-puck rectifying
Type of diode: hockey-puck rectifying
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TLE9251VLEXUMA1 TLE9251VLEXUMA1 INFINEON TECHNOLOGIES TLE9251V.pdf Category: CAN interfaces - integrated circuits
Description: IC: CAN transceiver; 3÷5.5VDC,4.5÷5.5VDC; PG-TSON-8; -40÷150°C
Type of integrated circuit: CAN transceiver
Supply voltage: 3...5.5V DC; 4.5...5.5V DC
Case: PG-TSON-8
Integrated circuit features: WUP
Interface: CAN-FD
Mounting: SMD
Operating temperature: -40...150°C
Number of receivers: 1
Number of transmitters: 1
Kind of package: reel; tape
DC supply current: 60mA
Produkt ist nicht verfügbar
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IPP083N10N5AKSA1 IPP083N10N5AKSA1 INFINEON TECHNOLOGIES IPP083N10N5-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 73A; 100W; PG-TO220-3
Polarisation: unipolar
Technology: OptiMOS™ 5
Drain current: 73A
Kind of channel: enhancement
Drain-source voltage: 100V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: tube
Case: PG-TO220-3
On-state resistance: 8.3mΩ
Mounting: THT
Power dissipation: 100W
Produkt ist nicht verfügbar
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IRL60HS118 IRL60HS118 INFINEON TECHNOLOGIES IRL60HS118.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 13A; 5.8W; PQFN2X2
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 13A
Power dissipation: 5.8W
Case: PQFN2X2
Gate-source voltage: ±20V
On-state resistance: 17mΩ
Mounting: SMD
Gate charge: 5.3nC
Kind of package: reel
Kind of channel: enhancement
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IRL80HS120 IRL80HS120 INFINEON TECHNOLOGIES IRL80HS120.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 9A; 5.8W; PQFN2X2
Case: PQFN2X2
Mounting: SMD
Power dissipation: 5.8W
Gate charge: 4.7nC
Polarisation: unipolar
Technology: OptiMOS™ 5
Drain current: 9A
Kind of channel: enhancement
Drain-source voltage: 80V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: reel
On-state resistance: 32mΩ
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D1481N65TVFXPSA1 INFINEON TECHNOLOGIES D1481N.pdf Category: Diodes - others
Description: Diode: hockey-puck rectifying
Type of diode: hockey-puck rectifying
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BAW78DH6327XTSA1 INFINEON TECHNOLOGIES baw78_baw79series.pdf?folderId=db3a30431400ef6801141c4ed9df0449&fileId=db3a30431400ef6801141c5037ac044a Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 1A; 1us; Ufmax: 1.6V; Ir: 1uA
Mounting: SMD
Max. forward voltage: 1.6V
Application: automotive industry
Max. off-state voltage: 0.4kV
Load current: 1A
Semiconductor structure: single diode
Leakage current: 1µA
Type of diode: rectifying
Reverse recovery time: 1µs
Produkt ist nicht verfügbar
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IRS10752LTRPBF IRS10752LTRPBF INFINEON TECHNOLOGIES IRS10752ltrpbf.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,gate driver; SOT23-6
Type of integrated circuit: driver
Topology: single transistor
Kind of integrated circuit: gate driver; high-side
Case: SOT23-6
Output current: -240...160mA
Number of channels: 1
Supply voltage: 10...18V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Voltage class: 100V
Turn-on time: 225ns
Turn-off time: 255ns
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BTF3050TEATMA1 INFINEON TECHNOLOGIES Infineon-BTF3050TE-DS-v01_00-EN.pdf?fileId=5546d4625a888733015a892c37d7023f Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 3A; Ch: 1; N-Channel; SMD; TO252-5
Mounting: SMD
Output current: 3A
Type of integrated circuit: power switch
Kind of output: N-Channel
Technology: HITFET®
Output voltage: 40V
Case: TO252-5
Kind of integrated circuit: low-side
Number of channels: 1
On-state resistance: 40mΩ
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BTH500601LUAAUMA1 INFINEON TECHNOLOGIES BTH500601LUAAUMA1.pdf Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 15.9A; Ch: 1; N-Channel; SMD; PG-HSOF-8
Case: PG-HSOF-8
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...150°C
Technology: PROFET™
Kind of integrated circuit: high-side
Number of channels: 1
On-state resistance: 14mΩ
Supply voltage: 12...54V DC
Output current: 15.9A
Type of integrated circuit: power switch
Kind of output: N-Channel
Produkt ist nicht verfügbar
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IAUT300N10S5N014ATMA1 INFINEON TECHNOLOGIES Infineon-IAUT300N10S5N014-DataSheet-v01_01-EN.pdf?fileId=5546d46277921c32017795c1685a4680 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 46A; Idm: 1315A; 375W
Drain current: 46A
Kind of channel: enhancement
Drain-source voltage: 100V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: PG-HSOF-8
On-state resistance: 2mΩ
Mounting: SMD
Pulsed drain current: 1315A
Power dissipation: 375W
Gate charge: 216nC
Polarisation: unipolar
Technology: OptiMOS™ 5
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IAUT300N08S5N011ATMA1 INFINEON TECHNOLOGIES infineon-iaut300n08s5n011-datasheet-en.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 52A; Idm: 1505A; 375W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 52A
Pulsed drain current: 1505A
Power dissipation: 375W
Case: PG-HSOF-8
Gate-source voltage: ±20V
On-state resistance: 1.7mΩ
Mounting: SMD
Gate charge: 231nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: OptiMOS™ 5
Produkt ist nicht verfügbar
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IPT60R022S7XTMA1 INFINEON TECHNOLOGIES IPT60R022S7XTMA1.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; CoolMOS™ S7; unipolar; 600V; 23A; Idm: 375A
Mounting: SMD
Pulsed drain current: 375A
Power dissipation: 390W
Gate charge: 31nC
Polarisation: unipolar
Technology: CoolMOS™ S7
Drain current: 23A
Kind of channel: enhancement
Drain-source voltage: 600V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: reel
Case: PG-HSOF-8
On-state resistance: 22mΩ
Produkt ist nicht verfügbar
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IPT029N08N5ATMA1 IPT029N08N5ATMA1 INFINEON TECHNOLOGIES IPT029N08N5.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 120A; Idm: 676A; 167W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 120A
Pulsed drain current: 676A
Power dissipation: 167W
Case: PG-HSOF-8
Gate-source voltage: ±20V
On-state resistance: 2.9mΩ
Mounting: SMD
Gate charge: 70nC
Kind of package: tape
Kind of channel: enhancement
Technology: OptiMOS™ 5
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IMT65R083M1HXUMA1 INFINEON TECHNOLOGIES Category: SMD N channel transistors
Description: Transistor: N-MOSFET; 650V; 32A; 158W; PG-HSOF-8
Type of transistor: N-MOSFET
Drain-source voltage: 650V
Drain current: 32A
Case: PG-HSOF-8
Mounting: SMD
Kind of channel: enhancement
Application: automotive industry
Gate-source voltage: 23V
On-state resistance: 83mΩ
Power dissipation: 158W
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IMT65R039M1HXUMA1 INFINEON TECHNOLOGIES Infineon-IMT65R039M1H-DataSheet-v02_01-EN.pdf?fileId=8ac78c8c872bd8d601876f4b481471c1 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; 650V; 61A; Idm: 122A; 263W; PG-HSOF-8
Type of transistor: N-MOSFET
Drain-source voltage: 650V
Drain current: 61A
Case: PG-HSOF-8
Mounting: SMD
Kind of channel: enhancement
Application: automotive industry
Gate-source voltage: 23V
On-state resistance: 39mΩ
Pulsed drain current: 122A
Power dissipation: 263W
Gate charge: 41nC
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BSZ440N10NS3GATMA1 BSZ440N10NS3GATMA1 INFINEON TECHNOLOGIES BSZ440N10NS3G-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 18A; 29W; PG-TSDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 18A
Power dissipation: 29W
Case: PG-TSDSON-8
Gate-source voltage: ±20V
On-state resistance: 44mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 3
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IAUZ40N10S5N130ATMA1 IAUZ40N10S5N130ATMA1 INFINEON TECHNOLOGIES Infineon-IAUZ40N10S5N130-DataSheet-v01_00-EN.pdf?fileId=5546d4626c1f3dc3016c8a62b6cf0ddb Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 35A; Idm: 160A; 68W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 35A
Pulsed drain current: 160A
Power dissipation: 68W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 13mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Technology: OptiMOS™ 5
Produkt ist nicht verfügbar
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IAUZ40N10S5L120ATMA1 INFINEON TECHNOLOGIES Infineon-IAUZ40N10S5L120-DataSheet-v01_01-EN.pdf?fileId=5546d46279cccfdb0179ccd443ce0217 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 9A; Idm: 160A; 62W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 9A
Pulsed drain current: 160A
Power dissipation: 62W
Case: PG-TSDSON-8
Gate-source voltage: ±20V
On-state resistance: 18.5mΩ
Mounting: SMD
Gate charge: 22.6nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: OptiMOS™ 5
Produkt ist nicht verfügbar
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IRF1104PBF IRF1104PBF INFINEON TECHNOLOGIES irf1104.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 170W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 100A
Power dissipation: 170W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 9mΩ
Mounting: THT
Gate charge: 62nC
Kind of package: tube
Kind of channel: enhancement
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ESD231B1W0201E6327XTSA1 INFINEON TECHNOLOGIES Infineon-ESD231-B1-W0201-DS-v01_01-EN.pdf?fileId=5546d462503812bb0150854d4bac4c9d Category: Bidirectional TVS SMD diodes
Description: Diode: TVS
Type of diode: TVS
Produkt ist nicht verfügbar
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TLD2311ELXUMA1 TLD2311ELXUMA1 INFINEON TECHNOLOGIES fundamentals-of-power-semiconductors Category: LED drivers
Description: IC: driver; boost; PG-SSOP-14-EP; 40V; Ch: 3; PWM; Uin: 5.5÷40V; 120mA
Type of integrated circuit: driver
Case: PG-SSOP-14-EP
Number of channels: 3
Integrated circuit features: PWM
Mounting: SMD
Input voltage: 5.5...40V
Maximum output current: 120mA
Operating temperature: -40...150°C
Application: automotive industry
Output voltage: 40V
Topology: boost
Produkt ist nicht verfügbar
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IAUC60N06S5N074ATMA1 IAUC60N06S5N074ATMA1 INFINEON TECHNOLOGIES Infineon-IAUC60N06S5N074-DataSheet-v01_00-EN.pdf?fileId=5546d4627a0b0c7b017a1eb505e56fee Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 15A; Idm: 168A; 52W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 15A
Power dissipation: 52W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 9mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 168A
Gate charge: 20nC
Produkt ist nicht verfügbar
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CY7C65213-32LTXI Infineon-CY7C65213.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: USB interfaces - integrated circuits
Description: IC: USB interface; GPIO x8,UART; USB controller; Full Speed
Type of integrated circuit: USB interface
Interface: GPIO x8; UART
Kind of integrated circuit: USB controller
USB speed: Full Speed
Data transfer rate: 12Mbps
Supply voltage: 1.71...5.5V DC
Kind of package: in-tray; tube
Case: QFN32
Integrated circuit features: bridge
Mounting: SMD
Operating temperature: -40...85°C
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CY7C65213A-32LTXI Infineon-CY7C65213.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: USB interfaces - integrated circuits
Description: IC: USB interface; GPIO x8,UART; USB controller; Full Speed
Type of integrated circuit: USB interface
Interface: GPIO x8; UART
Kind of integrated circuit: USB controller
USB speed: Full Speed
Data transfer rate: 12Mbps
Supply voltage: 1.71...5.5V DC
Kind of package: in-tray; tube
Case: QFN32
Integrated circuit features: bridge
Mounting: SMD
Operating temperature: -40...85°C
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CY7C65213-32LTXIT Infineon-CY7C65213.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: USB interfaces - integrated circuits
Description: IC: USB interface; GPIO x8,UART; USB controller; Full Speed
Type of integrated circuit: USB interface
Interface: GPIO x8; UART
Kind of integrated circuit: USB controller
USB speed: Full Speed
Data transfer rate: 12Mbps
Supply voltage: 1.71...5.5V DC
Kind of package: reel; tape
Case: QFN32
Integrated circuit features: bridge
Mounting: SMD
Operating temperature: -40...85°C
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CY7C65223-24LTXIT Infineon-CY7C65223.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: USB interfaces - integrated circuits
Description: IC: USB interface; GPIO x4,UART; USB controller; Full Speed
Type of integrated circuit: USB interface
Interface: GPIO x4; UART
Kind of integrated circuit: USB controller
USB speed: Full Speed
Data transfer rate: 12Mbps
Supply voltage: 1.71...5.5V DC
Kind of package: reel; tape
Case: QFN24
Integrated circuit features: bridge
Mounting: SMD
Operating temperature: -40...85°C
Produkt ist nicht verfügbar
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CY7C65223D-32LTXI Infineon-CY7C65223D-32LTX.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: USB interfaces - integrated circuits
Description: IC: USB interface; GPIO x4,UART; USB controller; Full Speed
Type of integrated circuit: USB interface
Case: QFN32
Mounting: SMD
Interface: GPIO x4; UART
Kind of integrated circuit: USB controller
Supply voltage: 1.71...5.5V DC
Data transfer rate: 12Mbps
Operating temperature: -40...85°C
Integrated circuit features: bridge
Kind of core: 8-bit
Kind of package: in-tray; tube
USB speed: Full Speed
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CY7C65223D-32LTXIT Infineon-CY7C65223D-32LTX.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: USB interfaces - integrated circuits
Description: IC: USB interface; GPIO x4,UART; USB controller; Full Speed
Type of integrated circuit: USB interface
Interface: GPIO x4; UART
Kind of integrated circuit: USB controller
USB speed: Full Speed
Data transfer rate: 12Mbps
Supply voltage: 1.71...5.5V DC
Kind of package: reel; tape
Case: QFN32
Integrated circuit features: bridge
Mounting: SMD
Operating temperature: -40...85°C
Kind of core: 8-bit
Produkt ist nicht verfügbar
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CY7C65215-32LTXIT Infineon-CY7C65215_CY7C65215A.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: USB interfaces - integrated circuits
Description: IC: USB interface; GPIO x17,I2C,SPI,UART; USB controller; QFN32
Type of integrated circuit: USB interface
Interface: GPIO x17; I2C; SPI; UART
Kind of integrated circuit: USB controller
USB speed: Full Speed
Data transfer rate: 12Mbps
Supply voltage: 1.71...5.5V DC
Kind of package: reel; tape
Case: QFN32
Integrated circuit features: bridge
Mounting: SMD
Operating temperature: -40...85°C
Produkt ist nicht verfügbar
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CY7C65211-24LTXIT Infineon-CY7C65211_USB.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: USB interfaces - integrated circuits
Description: IC: USB interface; GPIO x10,I2C,SPI,UART; USB controller; QFN24
Type of integrated circuit: USB interface
Interface: GPIO x10; I2C; SPI; UART
Kind of integrated circuit: USB controller
USB speed: Full Speed
Data transfer rate: 12Mbps
Supply voltage: 1.71...5.5V DC
Kind of package: reel; tape
Case: QFN24
Integrated circuit features: bridge
Mounting: SMD
Operating temperature: -40...85°C
Produkt ist nicht verfügbar
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CY7C65211A-24LTXI Infineon-CY7C65211_USB.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: USB interfaces - integrated circuits
Description: IC: USB interface; GPIO x10,I2C,SPI,UART; USB controller; QFN24
Type of integrated circuit: USB interface
Interface: GPIO x10; I2C; SPI; UART
Kind of integrated circuit: USB controller
USB speed: Full Speed
Data transfer rate: 12Mbps
Supply voltage: 1.71...5.5V DC
Kind of package: in-tray; tube
Case: QFN24
Integrated circuit features: bridge
Mounting: SMD
Operating temperature: -40...85°C
Produkt ist nicht verfügbar
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CY7C65215A-32LTXI Infineon-CY7C65215_CY7C65215A.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: USB interfaces - integrated circuits
Description: IC: USB interface; GPIO x17,I2C,SPI,UART; USB controller; QFN32
Type of integrated circuit: USB interface
Interface: GPIO x17; I2C; SPI; UART
Kind of integrated circuit: USB controller
USB speed: Full Speed
Data transfer rate: 12Mbps
Supply voltage: 1.71...5.5V DC
Kind of package: in-tray; tube
Case: QFN32
Integrated circuit features: bridge
Mounting: SMD
Operating temperature: -40...85°C
Produkt ist nicht verfügbar
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CY7C65217A-24LTXI Infineon-65210_65217_65210A_65217A.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: USB interfaces - integrated circuits
Description: IC: USB interface; GPIO x9,I2C,UART; USB controller; Full Speed
Type of integrated circuit: USB interface
Interface: GPIO x9; I2C; UART
Kind of integrated circuit: USB controller
USB speed: Full Speed
Data transfer rate: 12Mbps
Supply voltage: 1.71...5.5V DC
Kind of package: in-tray; tube
Case: QFN24
Mounting: SMD
Operating temperature: -40...85°C
Number of ports: 1
Produkt ist nicht verfügbar
Mindestbestellmenge: 4900 Stücke
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TLE4946KHTSA1 fundamentals-of-power-semiconductors
Hersteller: INFINEON TECHNOLOGIES
Category: Hall Sensors
Description: Sensor: Hall; latch; SC59; -19÷19mT; Usup: 2.7÷18VDC; SMT
Type of sensor: Hall
Kind of sensor: latch
Mounting: SMT
Operating temperature: -40...150°C
Supply voltage: 2.7...18V DC
Range of detectable magnetic field: -19...19mT
Case: SC59
Produkt ist nicht verfügbar
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BFP193E6327 BFP193E6327-dte.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; RF; 12V; 80mA; 0.58W; SOT143
Type of transistor: NPN
Collector current: 80mA
Mounting: SMD
Collector-emitter voltage: 12V
Power dissipation: 0.58W
Polarisation: bipolar
Kind of transistor: RF
Current gain: 70...140
Kind of package: reel; tape
Case: SOT143
Frequency: 8GHz
auf Bestellung 744 Stücke:
Lieferzeit 14-21 Tag (e)
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BFP193WH6327 BFP193WH6327-dte.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; RF; 20V; 80mA; 0.58W; SOT343
Type of transistor: NPN
Collector current: 80mA
Mounting: SMD
Collector-emitter voltage: 20V
Power dissipation: 0.58W
Polarisation: bipolar
Kind of transistor: RF
Kind of package: reel; tape
Case: SOT343
Frequency: 6GHz
Produkt ist nicht verfügbar
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CY7C1021D-10VXI description download
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 1MbSRAM; 64kx16bit; 4.5÷5.5V; 10ns; SOJ44; 400mils
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 1Mb SRAM
Memory organisation: 64kx16bit
Operating voltage: 4.5...5.5V
Access time: 10ns
Case: SOJ44
Kind of interface: parallel
Mounting: SMD
IC width: 400mils
auf Bestellung 42 Stücke:
Lieferzeit 14-21 Tag (e)
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IRLR9343TRPBF irlr9343pbf.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -55V; -20A; 79W; DPAK
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -55V
Drain current: -20A
Power dissipation: 79W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Features of semiconductor devices: logic level
Produkt ist nicht verfügbar
Mindestbestellmenge: 2000 Stücke
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IRLR3105TRPBF irlr3105pbf.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 25A; 57W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 25A
Power dissipation: 57W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Features of semiconductor devices: logic level
Produkt ist nicht verfügbar
Mindestbestellmenge: 2000 Stücke
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IRLR8103VTRPBF irlr8103vpbf.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 89A; 89W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 89A
Power dissipation: 89W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Features of semiconductor devices: logic level
Produkt ist nicht verfügbar
Mindestbestellmenge: 2000 Stücke
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BSS308PEH6327XTSA1 BSS308PEH6327XTSA1-DTE.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -2A; 0.5W; PG-SOT23
Type of transistor: P-MOSFET
Technology: OptiMOS™ P3
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -2A
Power dissipation: 0.5W
Case: PG-SOT23
Gate-source voltage: ±20V
On-state resistance: 80mΩ
Mounting: SMD
Kind of channel: enhancement
auf Bestellung 15201 Stücke:
Lieferzeit 14-21 Tag (e)
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IRS2113MTRPBF irs2113mpbf.pdf?fileId=5546d462533600a40153567676a227b7
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver
Type of integrated circuit: driver
Mounting: SMD
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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IRS2118SPBF irs2117pbf.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,gate driver; SO8; 625mW
Type of integrated circuit: driver
Topology: single transistor
Kind of integrated circuit: gate driver; high-side
Case: SO8
Output current: -600...290mA
Power: 625mW
Number of channels: 1
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 0.2µs
Turn-off time: 140ns
Produkt ist nicht verfügbar
Mindestbestellmenge: 95 Stücke
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BTS70121EPAXUMA1 Infineon-BTS7012-1EPA-DataSheet-v01_03-EN.pdf?fileId=5546d462636cc8fb0163fe8fb67008c2
Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 8.5A; Ch: 1; N-Channel; SMD; reel,tape
Type of integrated circuit: power switch
On-state resistance: 21.5mΩ
Mounting: SMD
Supply voltage: 4.1...28V DC
Output current: 8.5A
Kind of output: N-Channel
Operating temperature: -40...150°C
Technology: PROFET™+2
Kind of package: reel; tape
Case: PG-TSDSO-14
Kind of integrated circuit: high-side
Number of channels: 1
Produkt ist nicht verfügbar
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BTS70061EPPXUMA1 BTS70061EPP.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 12.5A; Ch: 1; N-Channel; SMD; reel,tape
Type of integrated circuit: power switch
On-state resistance: 6.6mΩ
Mounting: SMD
Supply voltage: 4.1...28V DC
Output current: 12.5A
Kind of output: N-Channel
Operating temperature: -40...150°C
Technology: High Current PROFET
Kind of package: reel; tape
Case: PG-TSDSO-14
Kind of integrated circuit: high-side
Number of channels: 1
Produkt ist nicht verfügbar
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BTS70401EPAXUMA1 BTS70401EPA.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 4.5A; Ch: 1; N-Channel; SMD; reel,tape
Type of integrated circuit: power switch
On-state resistance: 36mΩ
Mounting: SMD
Supply voltage: 4.1...28V DC
Output current: 4.5A
Kind of output: N-Channel
Operating temperature: -40...150°C
Technology: PROFET™+2
Kind of package: reel; tape
Case: PG-TSDSO-14
Kind of integrated circuit: high-side
Number of channels: 1
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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BTS70021EPPXUMA1 BTS7002-1EPP_v1.03_4-29-19.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 21A; Ch: 1; N-Channel; SMD; PG-TSDSO-14
Type of integrated circuit: power switch
On-state resistance: 2.6mΩ
Mounting: SMD
Supply voltage: 4.1...28V DC
Output current: 21A
Kind of output: N-Channel
Operating temperature: -40...150°C
Technology: High Current PROFET
Kind of package: reel; tape
Case: PG-TSDSO-14
Kind of integrated circuit: high-side
Number of channels: 1
Produkt ist nicht verfügbar
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BTS70802EPAXUMA1 Infineon-BTS7080-2EPA-DS-v01_00-EN.pdf?fileId=5546d4625e763904015e941bf21e2dbe
Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 3A; Ch: 2; N-Channel; SMD; PG-TSDSO-14
Type of integrated circuit: power switch
On-state resistance: 39.6mΩ
Mounting: SMD
Supply voltage: 4.1...28V DC
Output current: 3A
Kind of output: N-Channel
Operating temperature: -40...150°C
Technology: PROFET™+2
Kind of package: reel; tape
Case: PG-TSDSO-14
Kind of integrated circuit: high-side
Number of channels: 2
Produkt ist nicht verfügbar
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BTS70402EPAXUMA1 Infineon-BTS7040-2EPA-DS-v01_00-EN.pdf?fileId=5546d4625e763904015e9412cf6e2dbb
Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 3.5A; Ch: 2; N-Channel; SMD; reel,tape
Type of integrated circuit: power switch
On-state resistance: 36mΩ
Mounting: SMD
Supply voltage: 4.1...28V DC
Output current: 3.5A
Kind of output: N-Channel
Operating temperature: -40...150°C
Technology: PROFET™+2
Kind of package: reel; tape
Case: PG-TSDSO-14
Kind of integrated circuit: high-side
Number of channels: 2
Produkt ist nicht verfügbar
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BTS72002EPAXUMA1 BTS72002EPA.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 1.2A; Ch: 2; N-Channel; SMD; reel,tape
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 1.2A
Number of channels: 2
Kind of output: N-Channel
Mounting: SMD
Case: PG-TSDSO-14
On-state resistance: 0.12Ω
Kind of package: reel; tape
Supply voltage: 4.1...28V DC
Technology: PROFET™+2
Operating temperature: -40...150°C
Turn-on time: 170µs
Turn-off time: 0.15ms
Produkt ist nicht verfügbar
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BTS72004EPAXUMA1 Infineon-BTS7200-4EPA-DataSheet-v01_00-EN.pdf?fileId=5546d46270c4f93e0170e8a6ea220985
Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 1A; Ch: 4; N-Channel; SMD; PG-TSDSO-14
Type of integrated circuit: power switch
On-state resistance: 66.5mΩ
Mounting: SMD
Supply voltage: 6...18V DC
Output current: 1A
Kind of output: N-Channel
Technology: PROFET™+2
Case: PG-TSDSO-14
Kind of integrated circuit: high-side
Number of channels: 4
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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BTS70122EPAXUMA1 Infineon-BTS7012-2EPA-DS-v01_00-EN.pdf?fileId=5546d4625ee5d4cd015f1062883c6ca5
Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 6A; Ch: 2; N-Channel; SMD; PG-TSDSO-14
Type of integrated circuit: power switch
On-state resistance: 21.5mΩ
Mounting: SMD
Supply voltage: 4.1...28V DC
Output current: 6A
Kind of output: N-Channel
Operating temperature: -40...150°C
Technology: PROFET™+2
Kind of package: reel; tape
Case: PG-TSDSO-14
Kind of integrated circuit: high-side
Number of channels: 2
Produkt ist nicht verfügbar
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BTS70202EPAXUMA1 Infineon-BTS7020-2EPA-DS-v01_00-EN.pdf?fileId=5546d4625ee5d4cd015f10627dfb6ca3
Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 5A; Ch: 2; N-Channel; SMD; PG-TSDSO-14
Type of integrated circuit: power switch
On-state resistance: 23.7mΩ
Mounting: SMD
Supply voltage: 4.1...28V DC
Output current: 5A
Kind of output: N-Channel
Operating temperature: -40...150°C
Technology: PROFET™+2
Kind of package: reel; tape
Case: PG-TSDSO-14
Kind of integrated circuit: high-side
Number of channels: 2
Produkt ist nicht verfügbar
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BTS70082EPAXUMA1 Infineon-BTS7008-2EPA-DS-v01_00-EN.pdf?fileId=5546d46258fc0bc101590212356876b1
Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 7.5A; Ch: 2; N-Channel; SMD; -40÷150°C
Type of integrated circuit: power switch
On-state resistance: 9mΩ
Mounting: SMD
Supply voltage: 4.1...28V DC
Output current: 7.5A
Kind of output: N-Channel
Operating temperature: -40...150°C
Integrated circuit features: thermal protection
Application: automotive industry
Case: PG-TSDSO-14
Kind of integrated circuit: high-side
Number of channels: 2
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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BTS70081EPAXUMA1 BTS70081EPA.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 10A; Ch: 1; N-Channel; SMD; PG-TSDSO-14
Type of integrated circuit: power switch
On-state resistance: 16.4mΩ
Mounting: SMD
Supply voltage: 4.1...28V DC
Output current: 10A
Kind of output: N-Channel
Operating temperature: -40...150°C
Technology: PROFET™+2
Kind of package: reel; tape
Case: PG-TSDSO-14
Kind of integrated circuit: high-side
Number of channels: 1
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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BTS70081EPPXUMA1 BTS70081EPP.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 11A; Ch: 1; N-Channel; SMD; PG-TSDSO-14
Type of integrated circuit: power switch
On-state resistance: 8.8mΩ
Mounting: SMD
Supply voltage: 4.1...28V DC
Output current: 11A
Kind of output: N-Channel
Operating temperature: -40...150°C
Technology: High Current PROFET
Kind of package: reel; tape
Case: PG-TSDSO-14
Kind of integrated circuit: high-side
Number of channels: 1
Produkt ist nicht verfügbar
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BTS70102EPAXUMA1 BTS70102EPA.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 6.5A; Ch: 1; N-Channel; SMD; reel,tape
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 6.5A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: PG-TSDSO-14
On-state resistance: 19.5mΩ
Supply voltage: 4.1...28V DC
Technology: PROFET™+2
Kind of package: reel; tape
Operating temperature: -40...150°C
Produkt ist nicht verfügbar
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BTS71202EPAXUMA1 BTS71202EPA.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 2A; Ch: 2; N-Channel; SMD; PG-TSDSO-14
Type of integrated circuit: power switch
On-state resistance: 0.11Ω
Mounting: SMD
Supply voltage: 4.1...28V DC
Output current: 2A
Kind of output: N-Channel
Operating temperature: -40...150°C
Technology: PROFET™+2
Kind of package: reel; tape
Case: PG-TSDSO-14
Kind of integrated circuit: high-side
Number of channels: 2
Produkt ist nicht verfügbar
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BTS712N1XUMA1 BTS712N1.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 1.9÷4.4A; Ch: 4; N-Channel; SMD; SO20
Type of integrated circuit: power switch
On-state resistance: 50mΩ
Mounting: SMD
Supply voltage: 5...34V DC
Output current: 1.9...4.4A
Kind of output: N-Channel
Technology: Classic PROFET
Case: SO20
Kind of integrated circuit: high-side
Number of channels: 4
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
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D4810N28TVFXPSA1 Infineon-D4810N-DataSheet-v01_00-EN.pdf?fileId=5546d4627112d9d501712b08cde54047
Hersteller: INFINEON TECHNOLOGIES
Category: Diodes - others
Description: Diode: hockey-puck rectifying
Type of diode: hockey-puck rectifying
Produkt ist nicht verfügbar
Mindestbestellmenge: 2 Stücke
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TLE9251VLEXUMA1 TLE9251V.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: CAN interfaces - integrated circuits
Description: IC: CAN transceiver; 3÷5.5VDC,4.5÷5.5VDC; PG-TSON-8; -40÷150°C
Type of integrated circuit: CAN transceiver
Supply voltage: 3...5.5V DC; 4.5...5.5V DC
Case: PG-TSON-8
Integrated circuit features: WUP
Interface: CAN-FD
Mounting: SMD
Operating temperature: -40...150°C
Number of receivers: 1
Number of transmitters: 1
Kind of package: reel; tape
DC supply current: 60mA
Produkt ist nicht verfügbar
Mindestbestellmenge: 5000 Stücke
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IPP083N10N5AKSA1 IPP083N10N5-DTE.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 73A; 100W; PG-TO220-3
Polarisation: unipolar
Technology: OptiMOS™ 5
Drain current: 73A
Kind of channel: enhancement
Drain-source voltage: 100V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: tube
Case: PG-TO220-3
On-state resistance: 8.3mΩ
Mounting: THT
Power dissipation: 100W
Produkt ist nicht verfügbar
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IRL60HS118 IRL60HS118.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 13A; 5.8W; PQFN2X2
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 13A
Power dissipation: 5.8W
Case: PQFN2X2
Gate-source voltage: ±20V
On-state resistance: 17mΩ
Mounting: SMD
Gate charge: 5.3nC
Kind of package: reel
Kind of channel: enhancement
auf Bestellung 3399 Stücke:
Lieferzeit 14-21 Tag (e)
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IRL80HS120 IRL80HS120.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 9A; 5.8W; PQFN2X2
Case: PQFN2X2
Mounting: SMD
Power dissipation: 5.8W
Gate charge: 4.7nC
Polarisation: unipolar
Technology: OptiMOS™ 5
Drain current: 9A
Kind of channel: enhancement
Drain-source voltage: 80V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: reel
On-state resistance: 32mΩ
Produkt ist nicht verfügbar
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D1481N65TVFXPSA1 D1481N.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: Diodes - others
Description: Diode: hockey-puck rectifying
Type of diode: hockey-puck rectifying
Produkt ist nicht verfügbar
Mindestbestellmenge: 4 Stücke
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BAW78DH6327XTSA1 baw78_baw79series.pdf?folderId=db3a30431400ef6801141c4ed9df0449&fileId=db3a30431400ef6801141c5037ac044a
Hersteller: INFINEON TECHNOLOGIES
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 1A; 1us; Ufmax: 1.6V; Ir: 1uA
Mounting: SMD
Max. forward voltage: 1.6V
Application: automotive industry
Max. off-state voltage: 0.4kV
Load current: 1A
Semiconductor structure: single diode
Leakage current: 1µA
Type of diode: rectifying
Reverse recovery time: 1µs
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
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IRS10752LTRPBF IRS10752ltrpbf.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,gate driver; SOT23-6
Type of integrated circuit: driver
Topology: single transistor
Kind of integrated circuit: gate driver; high-side
Case: SOT23-6
Output current: -240...160mA
Number of channels: 1
Supply voltage: 10...18V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Voltage class: 100V
Turn-on time: 225ns
Turn-off time: 255ns
Produkt ist nicht verfügbar
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BTF3050TEATMA1 Infineon-BTF3050TE-DS-v01_00-EN.pdf?fileId=5546d4625a888733015a892c37d7023f
Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 3A; Ch: 1; N-Channel; SMD; TO252-5
Mounting: SMD
Output current: 3A
Type of integrated circuit: power switch
Kind of output: N-Channel
Technology: HITFET®
Output voltage: 40V
Case: TO252-5
Kind of integrated circuit: low-side
Number of channels: 1
On-state resistance: 40mΩ
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
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BTH500601LUAAUMA1 BTH500601LUAAUMA1.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 15.9A; Ch: 1; N-Channel; SMD; PG-HSOF-8
Case: PG-HSOF-8
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...150°C
Technology: PROFET™
Kind of integrated circuit: high-side
Number of channels: 1
On-state resistance: 14mΩ
Supply voltage: 12...54V DC
Output current: 15.9A
Type of integrated circuit: power switch
Kind of output: N-Channel
Produkt ist nicht verfügbar
Mindestbestellmenge: 2000 Stücke
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IAUT300N10S5N014ATMA1 Infineon-IAUT300N10S5N014-DataSheet-v01_01-EN.pdf?fileId=5546d46277921c32017795c1685a4680
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 46A; Idm: 1315A; 375W
Drain current: 46A
Kind of channel: enhancement
Drain-source voltage: 100V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: PG-HSOF-8
On-state resistance: 2mΩ
Mounting: SMD
Pulsed drain current: 1315A
Power dissipation: 375W
Gate charge: 216nC
Polarisation: unipolar
Technology: OptiMOS™ 5
Produkt ist nicht verfügbar
Mindestbestellmenge: 2000 Stücke
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IAUT300N08S5N011ATMA1 infineon-iaut300n08s5n011-datasheet-en.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 52A; Idm: 1505A; 375W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 52A
Pulsed drain current: 1505A
Power dissipation: 375W
Case: PG-HSOF-8
Gate-source voltage: ±20V
On-state resistance: 1.7mΩ
Mounting: SMD
Gate charge: 231nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: OptiMOS™ 5
Produkt ist nicht verfügbar
Mindestbestellmenge: 2000 Stücke
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IPT60R022S7XTMA1 IPT60R022S7XTMA1.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; CoolMOS™ S7; unipolar; 600V; 23A; Idm: 375A
Mounting: SMD
Pulsed drain current: 375A
Power dissipation: 390W
Gate charge: 31nC
Polarisation: unipolar
Technology: CoolMOS™ S7
Drain current: 23A
Kind of channel: enhancement
Drain-source voltage: 600V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: reel
Case: PG-HSOF-8
On-state resistance: 22mΩ
Produkt ist nicht verfügbar
Mindestbestellmenge: 2000 Stücke
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IPT029N08N5ATMA1 IPT029N08N5.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 120A; Idm: 676A; 167W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 120A
Pulsed drain current: 676A
Power dissipation: 167W
Case: PG-HSOF-8
Gate-source voltage: ±20V
On-state resistance: 2.9mΩ
Mounting: SMD
Gate charge: 70nC
Kind of package: tape
Kind of channel: enhancement
Technology: OptiMOS™ 5
Produkt ist nicht verfügbar
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IMT65R083M1HXUMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; 650V; 32A; 158W; PG-HSOF-8
Type of transistor: N-MOSFET
Drain-source voltage: 650V
Drain current: 32A
Case: PG-HSOF-8
Mounting: SMD
Kind of channel: enhancement
Application: automotive industry
Gate-source voltage: 23V
On-state resistance: 83mΩ
Power dissipation: 158W
auf Bestellung 4000 Stücke:
Lieferzeit 14-21 Tag (e)
Mindestbestellmenge: 2000 Stücke
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IMT65R039M1HXUMA1 Infineon-IMT65R039M1H-DataSheet-v02_01-EN.pdf?fileId=8ac78c8c872bd8d601876f4b481471c1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; 650V; 61A; Idm: 122A; 263W; PG-HSOF-8
Type of transistor: N-MOSFET
Drain-source voltage: 650V
Drain current: 61A
Case: PG-HSOF-8
Mounting: SMD
Kind of channel: enhancement
Application: automotive industry
Gate-source voltage: 23V
On-state resistance: 39mΩ
Pulsed drain current: 122A
Power dissipation: 263W
Gate charge: 41nC
auf Bestellung 4000 Stücke:
Lieferzeit 14-21 Tag (e)
Mindestbestellmenge: 2000 Stücke
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BSZ440N10NS3GATMA1 BSZ440N10NS3G-DTE.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 18A; 29W; PG-TSDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 18A
Power dissipation: 29W
Case: PG-TSDSON-8
Gate-source voltage: ±20V
On-state resistance: 44mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 3
auf Bestellung 67 Stücke:
Lieferzeit 14-21 Tag (e)
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IAUZ40N10S5N130ATMA1 Infineon-IAUZ40N10S5N130-DataSheet-v01_00-EN.pdf?fileId=5546d4626c1f3dc3016c8a62b6cf0ddb
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 35A; Idm: 160A; 68W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 35A
Pulsed drain current: 160A
Power dissipation: 68W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 13mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Technology: OptiMOS™ 5
Produkt ist nicht verfügbar
Mindestbestellmenge: 5000 Stücke
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IAUZ40N10S5L120ATMA1 Infineon-IAUZ40N10S5L120-DataSheet-v01_01-EN.pdf?fileId=5546d46279cccfdb0179ccd443ce0217
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 9A; Idm: 160A; 62W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 9A
Pulsed drain current: 160A
Power dissipation: 62W
Case: PG-TSDSON-8
Gate-source voltage: ±20V
On-state resistance: 18.5mΩ
Mounting: SMD
Gate charge: 22.6nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: OptiMOS™ 5
Produkt ist nicht verfügbar
Mindestbestellmenge: 5000 Stücke
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IRF1104PBF irf1104.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 170W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 100A
Power dissipation: 170W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 9mΩ
Mounting: THT
Gate charge: 62nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 13 Stücke:
Lieferzeit 14-21 Tag (e)
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ESD231B1W0201E6327XTSA1 Infineon-ESD231-B1-W0201-DS-v01_01-EN.pdf?fileId=5546d462503812bb0150854d4bac4c9d
Hersteller: INFINEON TECHNOLOGIES
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS
Type of diode: TVS
Produkt ist nicht verfügbar
Mindestbestellmenge: 15000 Stücke
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TLD2311ELXUMA1 fundamentals-of-power-semiconductors
Hersteller: INFINEON TECHNOLOGIES
Category: LED drivers
Description: IC: driver; boost; PG-SSOP-14-EP; 40V; Ch: 3; PWM; Uin: 5.5÷40V; 120mA
Type of integrated circuit: driver
Case: PG-SSOP-14-EP
Number of channels: 3
Integrated circuit features: PWM
Mounting: SMD
Input voltage: 5.5...40V
Maximum output current: 120mA
Operating temperature: -40...150°C
Application: automotive industry
Output voltage: 40V
Topology: boost
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
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IAUC60N06S5N074ATMA1 Infineon-IAUC60N06S5N074-DataSheet-v01_00-EN.pdf?fileId=5546d4627a0b0c7b017a1eb505e56fee
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 15A; Idm: 168A; 52W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 15A
Power dissipation: 52W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 9mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 168A
Gate charge: 20nC
Produkt ist nicht verfügbar
Mindestbestellmenge: 5000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
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