Produkte > INFINEON TECHNOLOGIES > Alle Produkte des Herstellers INFINEON TECHNOLOGIES (128278) > Seite 2099 nach 2138
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
| CY7C53150-20AXI | INFINEON TECHNOLOGIES |
 Category: Ethernet interfaces -integrated circuitsDescription: CY7C53150-20AXI |
auf Bestellung 70 Stücke: Lieferzeit 14-21 Tag (e) |
Mindestbestellmenge: 70 Stücke Im Einkaufswagen Stück im Wert von UAH | |
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TZ240N36KOF | INFINEON TECHNOLOGIES |
Category: Thyristor modules Description: Module: thyristor; single thyristor; 3.6kV; 240A; BG-PB501-1 Type of semiconductor module: thyristor Semiconductor structure: single thyristor Max. off-state voltage: 3.6kV Load current: 240A Case: BG-PB501-1 Max. forward voltage: 3.43V Max. forward impulse current: 6.1kA Gate current: 300mA Electrical mounting: FASTON connectors; screw Mechanical mounting: screw |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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BCR148SH6327 | INFINEON TECHNOLOGIES |
Category: NPN SMD transistors Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 0.25W; SOT363; R1: 47kΩ Collector-emitter voltage: 50V Base resistor: 47kΩ Power dissipation: 0.25W Polarisation: bipolar Kind of transistor: BRT Type of transistor: NPN x2 Base-emitter resistor: 47kΩ Case: SOT363 Frequency: 100MHz Collector current: 0.1A Mounting: SMD |
auf Bestellung 2035 Stücke: Lieferzeit 14-21 Tag (e) |
Mindestbestellmenge: 5 Stücke Im Einkaufswagen Stück im Wert von UAH |
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BSP317PH6327XTSA1 | INFINEON TECHNOLOGIES |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -250V; -0.43A; 1.8W; PG-SOT223 Mounting: SMD Power dissipation: 1.8W Polarisation: unipolar Technology: SIPMOS™ Drain current: -0.43A Kind of channel: enhancement Drain-source voltage: -250V Type of transistor: P-MOSFET Gate-source voltage: ±20V Case: PG-SOT223 On-state resistance: 4Ω |
auf Bestellung 1520 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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IRF7351TRPBF | INFINEON TECHNOLOGIES |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 60V; 8A; 2W; SO8 Type of transistor: N-MOSFET x2 Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 60V Drain current: 8A Power dissipation: 2W Case: SO8 Mounting: SMD Kind of package: reel Kind of channel: enhancement |
auf Bestellung 618 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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TT142N14KOF | INFINEON TECHNOLOGIES |
Category: Thyristor modules Description: Module: thyristor; double series; 1.4kV; 142A; BG-PB34-1; screw Type of semiconductor module: thyristor Semiconductor structure: double series Max. off-state voltage: 1.4kV Load current: 142A Case: BG-PB34-1 Max. forward voltage: 1.56V Max. forward impulse current: 4.8kA Gate current: 150mA Electrical mounting: FASTON connectors; screw Mechanical mounting: screw |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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BTS50080-1TMB | INFINEON TECHNOLOGIES |
Category: Power switches - integrated circuits Description: IC: power switch; high-side; 9.5A; Ch: 1; N-Channel; THT Output current: 9.5A Type of integrated circuit: power switch Kind of output: N-Channel Technology: High Current PROFET Case: PG-TO220-7-12 Kind of integrated circuit: high-side Number of channels: 1 On-state resistance: 7mΩ Mounting: THT Supply voltage: 5.5...38V DC |
auf Bestellung 498 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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BSS315PH6327XTSA1 | INFINEON TECHNOLOGIES |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -1.5A; 0.5W; PG-SOT23 Type of transistor: P-MOSFET Technology: OptiMOS™ P2 Polarisation: unipolar Drain-source voltage: -30V Drain current: -1.5A Power dissipation: 0.5W Case: PG-SOT23 Gate-source voltage: ±20V On-state resistance: 0.15Ω Mounting: SMD Kind of channel: enhancement |
auf Bestellung 3029 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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BSS126IXTSA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 21mA; 500mW; SOT23 Type of transistor: N-MOSFET Technology: SIPMOS™ Polarisation: unipolar Drain-source voltage: 600V Drain current: 21mA Power dissipation: 0.5W Case: SOT23 On-state resistance: 280Ω Mounting: SMD Gate charge: 1.4nC Application: automotive industry |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH |
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IPB012N04NF2SATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 40V; 197A; 250W; D2PAK,TO263 Case: D2PAK; TO263 Kind of channel: enhancement Mounting: SMD Type of transistor: N-MOSFET Technology: SiC Polarisation: unipolar Gate charge: 159nC On-state resistance: 1.25mΩ Drain-source voltage: 40V Drain current: 197A Power dissipation: 250W |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 800 Stücke Im Einkaufswagen Stück im Wert von UAH |
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TLD21413EPXUMA1 | INFINEON TECHNOLOGIES |
Category: LED drivers Description: IC: driver; high-side,LED driver; Litix™; PG-SSOP-14-EP; 80mA Type of integrated circuit: driver Kind of integrated circuit: high-side; LED driver Technology: Litix™ Case: PG-SSOP-14-EP Output current: 80mA Number of channels: 3 Integrated circuit features: linear dimming; PWM Mounting: SMD Operating voltage: 5.5...40V DC Protection: overheating OTP |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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TLE42764GVATMA1 | INFINEON TECHNOLOGIES |
Category: LDO adjustable voltage regulators Description: IC: voltage regulator; LDO,linear,adjustable; 2.5÷20V; 0.4A; SMD Type of integrated circuit: voltage regulator Kind of voltage regulator: adjustable; LDO; linear Voltage drop: 0.25V Output voltage: 2.5...20V Output current: 0.4A Case: PG-TO263-5 Mounting: SMD Kind of package: reel; tape Operating temperature: -40...150°C Tolerance: ±2% Number of channels: 1 Input voltage: 4.5...41V |
auf Bestellung 695 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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TLE42764GV50ATMA1 | INFINEON TECHNOLOGIES |
Category: LDO fixed voltage regulators Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.4A; PG-TO263-5; SMD Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Voltage drop: 0.25V Output voltage: 5V Output current: 0.4A Case: PG-TO263-5 Mounting: SMD Kind of package: reel; tape Operating temperature: -40...150°C Tolerance: ±2% Number of channels: 1 Input voltage: 4.5...41V |
auf Bestellung 977 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| TLE42744GSV33HTMA1 | INFINEON TECHNOLOGIES |
Category: LDO fixed voltage regulators Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.4A; PG-SOT223-4 Type of integrated circuit: voltage regulator Tolerance: ±2% Mounting: SMD Kind of voltage regulator: fixed; LDO; linear Input voltage: 4.7...40V Output current: 0.4A Voltage drop: 0.25V Operating temperature: -40...150°C Output voltage: 3.3V Kind of package: reel; tape Case: PG-SOT223-4 Number of channels: 1 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
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TLE42744DV50ATMA1 | INFINEON TECHNOLOGIES |
Category: LDO fixed voltage regulators Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.4A; DPAK; SMD; ±2% Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Voltage drop: 0.25V Output voltage: 5V Output current: 0.4A Case: DPAK Mounting: SMD Kind of package: reel; tape Operating temperature: -40...150°C Tolerance: ±2% Number of channels: 1 Input voltage: 5.5...40V |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH |
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TLE42764DVATMA1 | INFINEON TECHNOLOGIES |
Category: LDO adjustable voltage regulators Description: IC: voltage regulator; LDO,linear,adjustable; 2.5÷20V; 0.4A; SMD Type of integrated circuit: voltage regulator Kind of voltage regulator: adjustable; LDO; linear Voltage drop: 0.25V Output voltage: 2.5...20V Output current: 0.4A Case: PG-TO252-5 Mounting: SMD Kind of package: reel; tape Operating temperature: -40...150°C Tolerance: ±2% Number of channels: 1 Input voltage: 4.5...40V |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH |
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TLE42764DV50ATMA1 | INFINEON TECHNOLOGIES |
Category: LDO fixed voltage regulators Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.4A; PG-TO252-5; SMD Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Voltage drop: 0.25V Output voltage: 5V Output current: 0.4A Case: PG-TO252-5 Mounting: SMD Kind of package: reel; tape Operating temperature: -40...150°C Tolerance: ±2% Number of channels: 1 Input voltage: 4.5...41V |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH |
| IMCQ120R034M2HXTMA1 | INFINEON TECHNOLOGIES |
Category: Transistors - Unclassified Description: IMCQ120R034M2HXTMA1 |
auf Bestellung 2250 Stücke: Lieferzeit 14-21 Tag (e) |
Mindestbestellmenge: 750 Stücke Im Einkaufswagen Stück im Wert von UAH | |
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IPB090N06N3GATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 50A; 71W; PG-TO263-3 Type of transistor: N-MOSFET Gate-source voltage: ±20V Case: PG-TO263-3 On-state resistance: 9mΩ Mounting: SMD Power dissipation: 71W Polarisation: unipolar Technology: OptiMOS™ 3 Drain current: 50A Kind of channel: enhancement Drain-source voltage: 60V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| IPD200N15N3GATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 150V; 40A; Idm: 200A; 150W Power dissipation: 150W Case: PG-TO252-3 Mounting: SMD Kind of channel: enhancement Type of transistor: N-MOSFET Technology: OptiMOS™ 3 Polarisation: unipolar On-state resistance: 20mΩ Gate-source voltage: ±20V Drain current: 40A Drain-source voltage: 150V Pulsed drain current: 200A |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
| ESD230B1W0201E6327XTSA1 | INFINEON TECHNOLOGIES |
Category: Bidirectional TVS SMD diodes Description: Diode: TVS; ESD; 56W; 6.05V; 3A; bidirectional; SG-WLL-2-1 Type of diode: TVS Version: ESD Peak pulse power dissipation: 56W Max. off-state voltage: 5.5V Breakdown voltage: 6.05V Max. forward impulse current: 3A Semiconductor structure: bidirectional Case: SG-WLL-2-1 Mounting: SMD Leakage current: 0.1µA Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 15000 Stücke Im Einkaufswagen Stück im Wert von UAH | |
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ICE5AR4780BZSXKLA1 | INFINEON TECHNOLOGIES |
Category: Voltage regulators - PWM circuits Description: IC: PMIC; PWM controller; 2.6A; 100kHz; Ch: 1; DIP7; flyback; 0÷80% Type of integrated circuit: PMIC Kind of integrated circuit: PWM controller Output current: 2.6A Frequency: 0.1MHz Number of channels: 1 Case: DIP7 Mounting: THT Operating temperature: -40...140°C Topology: flyback Input voltage: 80...265V Breakdown voltage: 800V Duty cycle factor: 0...80% Power: 27.5/15/16W Application: SMPS Operating voltage: 10...25.5V DC |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2000 Stücke Im Einkaufswagen Stück im Wert von UAH |
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ICE5AR4770BZSXKLA1 | INFINEON TECHNOLOGIES |
Category: Voltage regulators - PWM circuits Description: IC: PMIC; PWM controller; 2.2A; 100kHz; Ch: 1; DIP7; flyback; 0÷80% Type of integrated circuit: PMIC Kind of integrated circuit: PWM controller Output current: 2.2A Frequency: 0.1MHz Number of channels: 1 Case: DIP7 Mounting: THT Operating temperature: -40...140°C Topology: flyback Input voltage: 80...265V Breakdown voltage: 700V Duty cycle factor: 0...80% Power: 26.5/14.5/16W Application: SMPS Operating voltage: 10...25.5V DC |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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IRFS4115TRLPBF | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 150V; 70A; Idm: 396A; 375W; D2PAK Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 150V Drain current: 70A Pulsed drain current: 396A Power dissipation: 375W Case: D2PAK Gate-source voltage: ±20V On-state resistance: 12.1mΩ Mounting: SMD Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 800 Stücke Im Einkaufswagen Stück im Wert von UAH |
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BCW60BE6327 | INFINEON TECHNOLOGIES |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 32V; 0.1A; 0.33W; SOT23 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 32V Collector current: 0.1A Power dissipation: 0.33W Case: SOT23 Mounting: SMD Frequency: 250MHz |
auf Bestellung 1 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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BSP372NH6327XTSA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 1.8A; 1.8W; SOT223 Type of transistor: N-MOSFET Technology: OptiMOS™ Polarisation: unipolar Drain-source voltage: 100V Drain current: 1.8A Power dissipation: 1.8W Case: SOT223 Gate-source voltage: ±20V On-state resistance: 0.27Ω Mounting: SMD Kind of channel: enhancement |
auf Bestellung 867 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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XMC4800F100F1024AAXQMA1 | INFINEON TECHNOLOGIES |
Category: Infineon Technologies microcontrollers Description: IC: ARM microcontroller; PG-LQFP-100; 200kBSRAM,1024kBFLASH Type of integrated circuit: ARM microcontroller Case: PG-LQFP-100 Memory: 200kB SRAM; 1MB FLASH Number of inputs/outputs: 75 Supply voltage: 3.3V DC Interface: CAN x6; EBI; GPIO; I2C; I2S; SPI; UART Integrated circuit features: clock gaiting; DSP; EEPROM emulation (DataFlash); RTC; watchdog Number of A/D channels: 18 Kind of architecture: Cortex M4 Family: XMC4800 Operating temperature: -40...85°C Kind of core: 32-bit |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| S26KS256SDPBHB023 | INFINEON TECHNOLOGIES |
Category: Serial FLASH memories - integrated circ. Description: IC: FLASH memory; 256MbFLASH; HyperBus; 166MHz; 1.7÷1.95V; FBGA24 Application: automotive Kind of memory: NOR Type of integrated circuit: FLASH memory Case: FBGA24 Interface: HyperBus Kind of package: reel; tape Kind of interface: serial Mounting: SMD Operating temperature: -40...105°C Operating voltage: 1.7...1.95V Operating frequency: 166MHz Memory: 256Mb FLASH |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH | |
| S26KS256SDPBHI020 | INFINEON TECHNOLOGIES |
Category: Serial FLASH memories - integrated circ. Description: IC: FLASH memory; 256MbFLASH; HyperBus; 166MHz; 1.7÷1.95V; FBGA24 Kind of memory: NOR Type of integrated circuit: FLASH memory Case: FBGA24 Interface: HyperBus Kind of package: in-tray Kind of interface: serial Mounting: SMD Operating temperature: -40...85°C Operating voltage: 1.7...1.95V Operating frequency: 166MHz Memory: 256Mb FLASH |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1690 Stücke Im Einkaufswagen Stück im Wert von UAH | |
| S26KS256SDPBHM020 | INFINEON TECHNOLOGIES |
Category: Serial FLASH memories - integrated circ. Description: IC: FLASH memory; 256MbFLASH; HyperBus; 166MHz; 1.7÷1.95V; FBGA24 Application: automotive Kind of memory: NOR Type of integrated circuit: FLASH memory Case: FBGA24 Interface: HyperBus Kind of package: in-tray Kind of interface: serial Mounting: SMD Operating temperature: -40...125°C Operating voltage: 1.7...1.95V Operating frequency: 166MHz Memory: 256Mb FLASH |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1690 Stücke Im Einkaufswagen Stück im Wert von UAH | |
| S26KS256SDPBHV020 | INFINEON TECHNOLOGIES |
Category: Serial FLASH memories - integrated circ. Description: IC: FLASH memory; 256MbFLASH; HyperBus; 166MHz; 1.7÷1.95V; FBGA24 Kind of memory: NOR Type of integrated circuit: FLASH memory Case: FBGA24 Interface: HyperBus Kind of package: in-tray Kind of interface: serial Mounting: SMD Operating temperature: -40...105°C Operating voltage: 1.7...1.95V Operating frequency: 166MHz Memory: 256Mb FLASH |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1690 Stücke Im Einkaufswagen Stück im Wert von UAH | |
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IPB065N15N3GATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 150V; 130A; 300W; PG-TO263-3 Type of transistor: N-MOSFET Technology: OptiMOS™ 3 Polarisation: unipolar Drain-source voltage: 150V Drain current: 130A Power dissipation: 300W Case: PG-TO263-3 Gate-source voltage: ±20V On-state resistance: 6.5mΩ Mounting: SMD Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1000 Stücke Im Einkaufswagen Stück im Wert von UAH |
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ITS4200SMEOHUMA1 | INFINEON TECHNOLOGIES |
Category: Power switches - integrated circuits Description: IC: power switch; high-side; 0.7A; Ch: 1; N-Channel; SMD; SOT223-4 Type of integrated circuit: power switch Kind of integrated circuit: high-side Output current: 0.7A Number of channels: 1 Kind of output: N-Channel Mounting: SMD Case: SOT223-4 Supply voltage: 11...45V DC Technology: Industrial PROFET Operating temperature: -40...125°C Kind of package: reel; tape On-state resistance: 0.15Ω |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| ITS4200SMENHUMA1 | INFINEON TECHNOLOGIES |
Category: Power switches - integrated circuits Description: IC: power switch; high-side; 0.7A; Ch: 1; N-Channel; SMD; SOT223-4 Type of integrated circuit: power switch Kind of integrated circuit: high-side Output current: 0.7A Number of channels: 1 Kind of output: N-Channel Mounting: SMD Case: SOT223-4 Supply voltage: 5...34V DC Technology: Industrial PROFET Operating temperature: -40...125°C Kind of package: reel; tape On-state resistance: 0.16Ω |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
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IPP50R190CEXKSA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 18.5A; 127W; PG-TO220-3 Type of transistor: N-MOSFET Technology: CoolMOS™ Polarisation: unipolar Drain-source voltage: 500V Drain current: 18.5A Power dissipation: 127W Case: PG-TO220-3 Gate-source voltage: ±20V On-state resistance: 0.19Ω Mounting: THT Kind of package: tube Kind of channel: enhancement |
auf Bestellung 669 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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IRFB4620PBF | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 200V; 25A; 144W; TO220AB Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 200V Drain current: 25A Power dissipation: 144W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 72.5mΩ Mounting: THT Gate charge: 25nC Kind of package: tube Kind of channel: enhancement |
auf Bestellung 285 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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IPW60R075CPFKSA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 39A; 313W; PG-TO247-3 Type of transistor: N-MOSFET On-state resistance: 75mΩ Mounting: THT Power dissipation: 313W Polarisation: unipolar Technology: CoolMOS™ CP Drain current: 39A Kind of channel: enhancement Drain-source voltage: 600V Gate-source voltage: ±20V Kind of package: tube Case: PG-TO247-3 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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IRS25411STRPBF | INFINEON TECHNOLOGIES |
Category: LED drivers Description: IC: driver; buck; high-/low-side,LED driver; SO8; -700÷500mA; Ch: 2 Output current: -700...500mA Type of integrated circuit: driver Operating temperature: -25...125°C Voltage class: 600V Turn-on time: 320ns Power: 625mW Kind of package: reel; tape Case: SO8 Turn-off time: 180ns Kind of integrated circuit: high-/low-side; LED driver Number of channels: 2 Topology: buck Mounting: SMD Supply voltage: 8...16.6V DC |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH |
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IRF2204PBF | INFINEON TECHNOLOGIES |
 Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 40V; 210A; 330W; TO220AB Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 40V Drain current: 210A Power dissipation: 330W Case: TO220AB Mounting: THT Kind of package: tube Kind of channel: enhancement |
auf Bestellung 2 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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IRFSL4010PBF | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 180A; 375W; TO262 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 180A Case: TO262 Mounting: THT Kind of package: tube Kind of channel: enhancement Power dissipation: 375W Technology: HEXFET® |
auf Bestellung 2 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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IRFR7446TRPBF | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 56A; 98W; DPAK Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 40V Drain current: 56A Power dissipation: 98W Case: DPAK Mounting: SMD Kind of package: reel Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2000 Stücke Im Einkaufswagen Stück im Wert von UAH |
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IPD033N06NATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 90A; 107W; DPAK,TO252 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 90A Power dissipation: 107W Case: DPAK; TO252 Mounting: SMD Gate charge: 44nC Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH |
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IPP023N04NGXKSA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 90A; 167W; PG-TO220-3 Type of transistor: N-MOSFET Technology: OptiMOS™ 3 Polarisation: unipolar Drain-source voltage: 40V Drain current: 90A Power dissipation: 167W Case: PG-TO220-3 Gate-source voltage: ±20V On-state resistance: 2.3mΩ Mounting: THT Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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IPD90N04S403ATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; N; 40V; 90A; Idm: 90A; 94W; DPAK Type of transistor: N-MOSFET Drain-source voltage: 40V Drain current: 90A Power dissipation: 94W Case: DPAK Gate-source voltage: 20V Mounting: SMD Kind of channel: enhancement Pulsed drain current: 90A Application: automotive industry Technology: MOSFET Polarisation: N Gate charge: 66.8nC |
auf Bestellung 10000 Stücke: Lieferzeit 14-21 Tag (e) |
Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH |
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IPD90N04S4L04ATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; N; 40V; 90A; 71W; DPAK,TO252 Type of transistor: N-MOSFET Drain-source voltage: 40V Drain current: 90A Power dissipation: 71W Case: DPAK; TO252 Gate-source voltage: 20V On-state resistance: 3.2mΩ Mounting: SMD Kind of channel: enhancement Application: automotive industry Technology: MOSFET Polarisation: N Gate charge: 60nC |
auf Bestellung 24937 Stücke: Lieferzeit 14-21 Tag (e) |
Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH |
| TLE49421CHAMA2 | INFINEON TECHNOLOGIES |
Category: Hall Sensors Description: Sensor: Hall; THT; Temp: -40÷150°C; TLE Type of sensor: Hall Mounting: THT Operating temperature: -40...150°C Manufacturer series: TLE |
auf Bestellung 172500 Stücke: Lieferzeit 14-21 Tag (e) |
Mindestbestellmenge: 1500 Stücke Im Einkaufswagen Stück im Wert von UAH | |
 |
2EDS8165HXUMA1 | INFINEON TECHNOLOGIES |
Category: MOSFET/IGBT drivers Description: IC: driver; MOSFET half-bridge; high-side,MOSFET gate driver Type of integrated circuit: driver Topology: MOSFET half-bridge Kind of integrated circuit: high-side; MOSFET gate driver Technology: EiceDRIVER™ Case: PG-DSO-16 Output current: -2...1A Number of channels: 2 Integrated circuit features: galvanically isolated Mounting: SMD Kind of package: reel; tape Supply voltage: 3...3.5V; 4.5...20V Voltage class: 650V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
 |
IGZ100N65H5XKSA1 | INFINEON TECHNOLOGIES |
Category: THT IGBT transistors Description: Transistor: IGBT; 650V; 101A; 268W; TO247-4; H5 Type of transistor: IGBT Technology: TRENCHSTOP™ 5 Collector-emitter voltage: 650V Collector current: 101A Power dissipation: 268W Case: TO247-4 Gate-emitter voltage: ±20V Pulsed collector current: 400A Mounting: THT Gate charge: 0.21µC Kind of package: tube Manufacturer series: H5 Turn-on time: 40ns Turn-off time: 485ns |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
|
|
BAT1704E6327HTSA1 | INFINEON TECHNOLOGIES |
Category: SMD Schottky diodes Description: Diode: Schottky switching; SOT23; SMD; 4V; 0.13A; 150mW Type of diode: Schottky switching Case: SOT23 Mounting: SMD Max. off-state voltage: 4V Load current: 0.13A Semiconductor structure: double series Max. forward voltage: 0.6V Power dissipation: 0.15W |
auf Bestellung 408 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| FZ800R45KL3B5NOSA2 | INFINEON TECHNOLOGIES |
Category: IGBT modules Description: Module: IGBT; Ic: 800A; 9kW; Field Stop,Trench; screw Power dissipation: 9kW Technology: Field Stop; Trench Mechanical mounting: screw Pulsed collector current: 1.6kA Gate-emitter voltage: ±20V Collector current: 800A Type of semiconductor module: IGBT |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2 Stücke Im Einkaufswagen Stück im Wert von UAH | |
| AIDK10S65C5ATMA1 | INFINEON TECHNOLOGIES |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; PG-TO263-2; SiC; SMD; 650V; 10A; 53W Max. forward impulse current: 33A Max. forward voltage: 2.1V Power dissipation: 53W Technology: CoolSiC™ 5G; SiC Max. off-state voltage: 650V Load current: 10A Kind of package: reel; tape Semiconductor structure: single diode Leakage current: 12µA Case: PG-TO263-2 Type of diode: Schottky rectifying Mounting: SMD |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1000 Stücke Im Einkaufswagen Stück im Wert von UAH | |
 |
IAUC60N10S5L110ATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 42A; Idm: 240A; 88W Pulsed drain current: 240A Power dissipation: 88W Gate charge: 24.1nC Polarisation: unipolar Technology: OptiMOS™ 5 Drain current: 42A Kind of channel: enhancement Drain-source voltage: 100V Type of transistor: N-MOSFET Gate-source voltage: ±20V Kind of package: reel; tape Case: PG-TDSON-8 On-state resistance: 15.3mΩ Mounting: SMD |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 5000 Stücke Im Einkaufswagen Stück im Wert von UAH |
| BTS50451EJAXUMA1 | INFINEON TECHNOLOGIES |
Category: Power switches - integrated circuits Description: IC: power switch; high-side; 4A; Ch: 1; N-Channel; SMD; PG-DSO-8-EP Mounting: SMD Supply voltage: 5...28V DC Output current: 4A Type of integrated circuit: power switch Kind of output: N-Channel Power dissipation: 1.6W Operating temperature: -40...150°C Technology: PROFET™+ 12V Case: PG-DSO-8-EP Kind of integrated circuit: high-side Number of channels: 1 On-state resistance: 45mΩ |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 5000 Stücke Im Einkaufswagen Stück im Wert von UAH | |
| ISA220280C03LMDSXTMA1 | INFINEON TECHNOLOGIES |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar Mounting: SMD Polarisation: unipolar Type of transistor: N-MOSFET x2 |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 4000 Stücke Im Einkaufswagen Stück im Wert von UAH | |
| CY7C65213-28PVXIT | INFINEON TECHNOLOGIES |
Category: USB interfaces - integrated circuits Description: IC: USB interface; GPIO x8,UART; USB controller; Full Speed Type of integrated circuit: USB interface Case: SSOP28 Mounting: SMD Interface: GPIO x8; UART Kind of integrated circuit: USB controller Supply voltage: 1.71...5.5V DC Data transfer rate: 12Mbps Operating temperature: -40...85°C Integrated circuit features: bridge Kind of package: reel; tape USB speed: Full Speed |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1000 Stücke Im Einkaufswagen Stück im Wert von UAH | |
| CY7C65213A-28PVXI | INFINEON TECHNOLOGIES |
Category: USB interfaces - integrated circuits Description: IC: USB interface; GPIO x8,UART; USB controller; Full Speed Type of integrated circuit: USB interface Interface: GPIO x8; UART Kind of integrated circuit: USB controller USB speed: Full Speed Data transfer rate: 12Mbps Supply voltage: 1.71...5.5V DC Kind of package: in-tray; tube Case: SSOP28 Integrated circuit features: bridge Mounting: SMD Operating temperature: -40...85°C |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1175 Stücke Im Einkaufswagen Stück im Wert von UAH | |
| CY7C65213-28PVXI | INFINEON TECHNOLOGIES |
Category: USB interfaces - integrated circuits Description: IC: USB interface; GPIO x8,UART; USB controller; Full Speed Type of integrated circuit: USB interface Case: SSOP28 Mounting: SMD Interface: GPIO x8; UART Kind of integrated circuit: USB controller Supply voltage: 1.71...5.5V DC Data transfer rate: 12Mbps Operating temperature: -40...85°C Integrated circuit features: bridge Kind of package: in-tray; tube USB speed: Full Speed |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2350 Stücke Im Einkaufswagen Stück im Wert von UAH | |
 |
CY7C65223-24LTXI | INFINEON TECHNOLOGIES |
Category: USB interfaces - integrated circuits Description: IC: USB interface; GPIO x4,UART; USB controller; Full Speed Type of integrated circuit: USB interface Case: QFN24 Mounting: SMD Interface: GPIO x4; UART Kind of integrated circuit: USB controller Supply voltage: 1.71...5.5V DC Data transfer rate: 12Mbps Operating temperature: -40...85°C Integrated circuit features: bridge Kind of package: in-tray; tube USB speed: Full Speed |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2450 Stücke Im Einkaufswagen Stück im Wert von UAH |
| CY7C65213-32LTXI | INFINEON TECHNOLOGIES |
Category: USB interfaces - integrated circuits Description: IC: USB interface; GPIO x8,UART; USB controller; Full Speed Type of integrated circuit: USB interface Interface: GPIO x8; UART Kind of integrated circuit: USB controller USB speed: Full Speed Data transfer rate: 12Mbps Supply voltage: 1.71...5.5V DC Kind of package: in-tray; tube Case: QFN32 Integrated circuit features: bridge Mounting: SMD Operating temperature: -40...85°C |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 4900 Stücke Im Einkaufswagen Stück im Wert von UAH | |
| CY7C65213A-32LTXI | INFINEON TECHNOLOGIES |
Category: USB interfaces - integrated circuits Description: IC: USB interface; GPIO x8,UART; USB controller; Full Speed Type of integrated circuit: USB interface Interface: GPIO x8; UART Kind of integrated circuit: USB controller USB speed: Full Speed Data transfer rate: 12Mbps Supply voltage: 1.71...5.5V DC Kind of package: in-tray; tube Case: QFN32 Integrated circuit features: bridge Mounting: SMD Operating temperature: -40...85°C |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 4900 Stücke Im Einkaufswagen Stück im Wert von UAH |
| CY7C53150-20AXI |
|
Hersteller: INFINEON TECHNOLOGIES
Category: Ethernet interfaces -integrated circuits
Description: CY7C53150-20AXI
Category: Ethernet interfaces -integrated circuits
Description: CY7C53150-20AXI
auf Bestellung 70 Stücke:
Lieferzeit 14-21 Tag (e)
| TZ240N36KOF |
|
Hersteller: INFINEON TECHNOLOGIES
Category: Thyristor modules
Description: Module: thyristor; single thyristor; 3.6kV; 240A; BG-PB501-1
Type of semiconductor module: thyristor
Semiconductor structure: single thyristor
Max. off-state voltage: 3.6kV
Load current: 240A
Case: BG-PB501-1
Max. forward voltage: 3.43V
Max. forward impulse current: 6.1kA
Gate current: 300mA
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Category: Thyristor modules
Description: Module: thyristor; single thyristor; 3.6kV; 240A; BG-PB501-1
Type of semiconductor module: thyristor
Semiconductor structure: single thyristor
Max. off-state voltage: 3.6kV
Load current: 240A
Case: BG-PB501-1
Max. forward voltage: 3.43V
Max. forward impulse current: 6.1kA
Gate current: 300mA
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BCR148SH6327 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 0.25W; SOT363; R1: 47kΩ
Collector-emitter voltage: 50V
Base resistor: 47kΩ
Power dissipation: 0.25W
Polarisation: bipolar
Kind of transistor: BRT
Type of transistor: NPN x2
Base-emitter resistor: 47kΩ
Case: SOT363
Frequency: 100MHz
Collector current: 0.1A
Mounting: SMD
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 0.25W; SOT363; R1: 47kΩ
Collector-emitter voltage: 50V
Base resistor: 47kΩ
Power dissipation: 0.25W
Polarisation: bipolar
Kind of transistor: BRT
Type of transistor: NPN x2
Base-emitter resistor: 47kΩ
Case: SOT363
Frequency: 100MHz
Collector current: 0.1A
Mounting: SMD
auf Bestellung 2035 Stücke:
Lieferzeit 14-21 Tag (e)
| BSP317PH6327XTSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -250V; -0.43A; 1.8W; PG-SOT223
Mounting: SMD
Power dissipation: 1.8W
Polarisation: unipolar
Technology: SIPMOS™
Drain current: -0.43A
Kind of channel: enhancement
Drain-source voltage: -250V
Type of transistor: P-MOSFET
Gate-source voltage: ±20V
Case: PG-SOT223
On-state resistance: 4Ω
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -250V; -0.43A; 1.8W; PG-SOT223
Mounting: SMD
Power dissipation: 1.8W
Polarisation: unipolar
Technology: SIPMOS™
Drain current: -0.43A
Kind of channel: enhancement
Drain-source voltage: -250V
Type of transistor: P-MOSFET
Gate-source voltage: ±20V
Case: PG-SOT223
On-state resistance: 4Ω
auf Bestellung 1520 Stücke:
Lieferzeit 14-21 Tag (e)
| IRF7351TRPBF |
|
Hersteller: INFINEON TECHNOLOGIES
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 8A; 2W; SO8
Type of transistor: N-MOSFET x2
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 8A
Power dissipation: 2W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 8A; 2W; SO8
Type of transistor: N-MOSFET x2
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 8A
Power dissipation: 2W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
auf Bestellung 618 Stücke:
Lieferzeit 14-21 Tag (e)
| TT142N14KOF |
|
Hersteller: INFINEON TECHNOLOGIES
Category: Thyristor modules
Description: Module: thyristor; double series; 1.4kV; 142A; BG-PB34-1; screw
Type of semiconductor module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.4kV
Load current: 142A
Case: BG-PB34-1
Max. forward voltage: 1.56V
Max. forward impulse current: 4.8kA
Gate current: 150mA
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Category: Thyristor modules
Description: Module: thyristor; double series; 1.4kV; 142A; BG-PB34-1; screw
Type of semiconductor module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.4kV
Load current: 142A
Case: BG-PB34-1
Max. forward voltage: 1.56V
Max. forward impulse current: 4.8kA
Gate current: 150mA
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BTS50080-1TMB |
|
Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 9.5A; Ch: 1; N-Channel; THT
Output current: 9.5A
Type of integrated circuit: power switch
Kind of output: N-Channel
Technology: High Current PROFET
Case: PG-TO220-7-12
Kind of integrated circuit: high-side
Number of channels: 1
On-state resistance: 7mΩ
Mounting: THT
Supply voltage: 5.5...38V DC
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 9.5A; Ch: 1; N-Channel; THT
Output current: 9.5A
Type of integrated circuit: power switch
Kind of output: N-Channel
Technology: High Current PROFET
Case: PG-TO220-7-12
Kind of integrated circuit: high-side
Number of channels: 1
On-state resistance: 7mΩ
Mounting: THT
Supply voltage: 5.5...38V DC
auf Bestellung 498 Stücke:
Lieferzeit 14-21 Tag (e)
| BSS315PH6327XTSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -1.5A; 0.5W; PG-SOT23
Type of transistor: P-MOSFET
Technology: OptiMOS™ P2
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -1.5A
Power dissipation: 0.5W
Case: PG-SOT23
Gate-source voltage: ±20V
On-state resistance: 0.15Ω
Mounting: SMD
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -1.5A; 0.5W; PG-SOT23
Type of transistor: P-MOSFET
Technology: OptiMOS™ P2
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -1.5A
Power dissipation: 0.5W
Case: PG-SOT23
Gate-source voltage: ±20V
On-state resistance: 0.15Ω
Mounting: SMD
Kind of channel: enhancement
auf Bestellung 3029 Stücke:
Lieferzeit 14-21 Tag (e)
| BSS126IXTSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 21mA; 500mW; SOT23
Type of transistor: N-MOSFET
Technology: SIPMOS™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 21mA
Power dissipation: 0.5W
Case: SOT23
On-state resistance: 280Ω
Mounting: SMD
Gate charge: 1.4nC
Application: automotive industry
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 21mA; 500mW; SOT23
Type of transistor: N-MOSFET
Technology: SIPMOS™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 21mA
Power dissipation: 0.5W
Case: SOT23
On-state resistance: 280Ω
Mounting: SMD
Gate charge: 1.4nC
Application: automotive industry
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| IPB012N04NF2SATMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 40V; 197A; 250W; D2PAK,TO263
Case: D2PAK; TO263
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Gate charge: 159nC
On-state resistance: 1.25mΩ
Drain-source voltage: 40V
Drain current: 197A
Power dissipation: 250W
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 40V; 197A; 250W; D2PAK,TO263
Case: D2PAK; TO263
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Gate charge: 159nC
On-state resistance: 1.25mΩ
Drain-source voltage: 40V
Drain current: 197A
Power dissipation: 250W
Produkt ist nicht verfügbar
Mindestbestellmenge: 800 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| TLD21413EPXUMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: LED drivers
Description: IC: driver; high-side,LED driver; Litix™; PG-SSOP-14-EP; 80mA
Type of integrated circuit: driver
Kind of integrated circuit: high-side; LED driver
Technology: Litix™
Case: PG-SSOP-14-EP
Output current: 80mA
Number of channels: 3
Integrated circuit features: linear dimming; PWM
Mounting: SMD
Operating voltage: 5.5...40V DC
Protection: overheating OTP
Category: LED drivers
Description: IC: driver; high-side,LED driver; Litix™; PG-SSOP-14-EP; 80mA
Type of integrated circuit: driver
Kind of integrated circuit: high-side; LED driver
Technology: Litix™
Case: PG-SSOP-14-EP
Output current: 80mA
Number of channels: 3
Integrated circuit features: linear dimming; PWM
Mounting: SMD
Operating voltage: 5.5...40V DC
Protection: overheating OTP
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| TLE42764GVATMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: LDO adjustable voltage regulators
Description: IC: voltage regulator; LDO,linear,adjustable; 2.5÷20V; 0.4A; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: adjustable; LDO; linear
Voltage drop: 0.25V
Output voltage: 2.5...20V
Output current: 0.4A
Case: PG-TO263-5
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...150°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 4.5...41V
Category: LDO adjustable voltage regulators
Description: IC: voltage regulator; LDO,linear,adjustable; 2.5÷20V; 0.4A; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: adjustable; LDO; linear
Voltage drop: 0.25V
Output voltage: 2.5...20V
Output current: 0.4A
Case: PG-TO263-5
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...150°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 4.5...41V
auf Bestellung 695 Stücke:
Lieferzeit 14-21 Tag (e)
| TLE42764GV50ATMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.4A; PG-TO263-5; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.25V
Output voltage: 5V
Output current: 0.4A
Case: PG-TO263-5
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...150°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 4.5...41V
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.4A; PG-TO263-5; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.25V
Output voltage: 5V
Output current: 0.4A
Case: PG-TO263-5
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...150°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 4.5...41V
auf Bestellung 977 Stücke:
Lieferzeit 14-21 Tag (e)
| TLE42744GSV33HTMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.4A; PG-SOT223-4
Type of integrated circuit: voltage regulator
Tolerance: ±2%
Mounting: SMD
Kind of voltage regulator: fixed; LDO; linear
Input voltage: 4.7...40V
Output current: 0.4A
Voltage drop: 0.25V
Operating temperature: -40...150°C
Output voltage: 3.3V
Kind of package: reel; tape
Case: PG-SOT223-4
Number of channels: 1
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.4A; PG-SOT223-4
Type of integrated circuit: voltage regulator
Tolerance: ±2%
Mounting: SMD
Kind of voltage regulator: fixed; LDO; linear
Input voltage: 4.7...40V
Output current: 0.4A
Voltage drop: 0.25V
Operating temperature: -40...150°C
Output voltage: 3.3V
Kind of package: reel; tape
Case: PG-SOT223-4
Number of channels: 1
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| TLE42744DV50ATMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.4A; DPAK; SMD; ±2%
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.25V
Output voltage: 5V
Output current: 0.4A
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...150°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 5.5...40V
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.4A; DPAK; SMD; ±2%
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.25V
Output voltage: 5V
Output current: 0.4A
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...150°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 5.5...40V
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| TLE42764DVATMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: LDO adjustable voltage regulators
Description: IC: voltage regulator; LDO,linear,adjustable; 2.5÷20V; 0.4A; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: adjustable; LDO; linear
Voltage drop: 0.25V
Output voltage: 2.5...20V
Output current: 0.4A
Case: PG-TO252-5
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...150°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 4.5...40V
Category: LDO adjustable voltage regulators
Description: IC: voltage regulator; LDO,linear,adjustable; 2.5÷20V; 0.4A; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: adjustable; LDO; linear
Voltage drop: 0.25V
Output voltage: 2.5...20V
Output current: 0.4A
Case: PG-TO252-5
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...150°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 4.5...40V
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| TLE42764DV50ATMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.4A; PG-TO252-5; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.25V
Output voltage: 5V
Output current: 0.4A
Case: PG-TO252-5
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...150°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 4.5...41V
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.4A; PG-TO252-5; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.25V
Output voltage: 5V
Output current: 0.4A
Case: PG-TO252-5
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...150°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 4.5...41V
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
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| IMCQ120R034M2HXTMA1 |
Hersteller: INFINEON TECHNOLOGIES
Category: Transistors - Unclassified
Description: IMCQ120R034M2HXTMA1
Category: Transistors - Unclassified
Description: IMCQ120R034M2HXTMA1
auf Bestellung 2250 Stücke:
Lieferzeit 14-21 Tag (e)
| IPB090N06N3GATMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 50A; 71W; PG-TO263-3
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Case: PG-TO263-3
On-state resistance: 9mΩ
Mounting: SMD
Power dissipation: 71W
Polarisation: unipolar
Technology: OptiMOS™ 3
Drain current: 50A
Kind of channel: enhancement
Drain-source voltage: 60V
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 50A; 71W; PG-TO263-3
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Case: PG-TO263-3
On-state resistance: 9mΩ
Mounting: SMD
Power dissipation: 71W
Polarisation: unipolar
Technology: OptiMOS™ 3
Drain current: 50A
Kind of channel: enhancement
Drain-source voltage: 60V
Produkt ist nicht verfügbar
Im Einkaufswagen
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| IPD200N15N3GATMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 40A; Idm: 200A; 150W
Power dissipation: 150W
Case: PG-TO252-3
Mounting: SMD
Kind of channel: enhancement
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
On-state resistance: 20mΩ
Gate-source voltage: ±20V
Drain current: 40A
Drain-source voltage: 150V
Pulsed drain current: 200A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 40A; Idm: 200A; 150W
Power dissipation: 150W
Case: PG-TO252-3
Mounting: SMD
Kind of channel: enhancement
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
On-state resistance: 20mΩ
Gate-source voltage: ±20V
Drain current: 40A
Drain-source voltage: 150V
Pulsed drain current: 200A
Produkt ist nicht verfügbar
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| ESD230B1W0201E6327XTSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; ESD; 56W; 6.05V; 3A; bidirectional; SG-WLL-2-1
Type of diode: TVS
Version: ESD
Peak pulse power dissipation: 56W
Max. off-state voltage: 5.5V
Breakdown voltage: 6.05V
Max. forward impulse current: 3A
Semiconductor structure: bidirectional
Case: SG-WLL-2-1
Mounting: SMD
Leakage current: 0.1µA
Kind of package: reel; tape
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; ESD; 56W; 6.05V; 3A; bidirectional; SG-WLL-2-1
Type of diode: TVS
Version: ESD
Peak pulse power dissipation: 56W
Max. off-state voltage: 5.5V
Breakdown voltage: 6.05V
Max. forward impulse current: 3A
Semiconductor structure: bidirectional
Case: SG-WLL-2-1
Mounting: SMD
Leakage current: 0.1µA
Kind of package: reel; tape
Produkt ist nicht verfügbar
Mindestbestellmenge: 15000 Stücke
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| ICE5AR4780BZSXKLA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PWM controller; 2.6A; 100kHz; Ch: 1; DIP7; flyback; 0÷80%
Type of integrated circuit: PMIC
Kind of integrated circuit: PWM controller
Output current: 2.6A
Frequency: 0.1MHz
Number of channels: 1
Case: DIP7
Mounting: THT
Operating temperature: -40...140°C
Topology: flyback
Input voltage: 80...265V
Breakdown voltage: 800V
Duty cycle factor: 0...80%
Power: 27.5/15/16W
Application: SMPS
Operating voltage: 10...25.5V DC
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PWM controller; 2.6A; 100kHz; Ch: 1; DIP7; flyback; 0÷80%
Type of integrated circuit: PMIC
Kind of integrated circuit: PWM controller
Output current: 2.6A
Frequency: 0.1MHz
Number of channels: 1
Case: DIP7
Mounting: THT
Operating temperature: -40...140°C
Topology: flyback
Input voltage: 80...265V
Breakdown voltage: 800V
Duty cycle factor: 0...80%
Power: 27.5/15/16W
Application: SMPS
Operating voltage: 10...25.5V DC
Produkt ist nicht verfügbar
Mindestbestellmenge: 2000 Stücke
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| ICE5AR4770BZSXKLA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PWM controller; 2.2A; 100kHz; Ch: 1; DIP7; flyback; 0÷80%
Type of integrated circuit: PMIC
Kind of integrated circuit: PWM controller
Output current: 2.2A
Frequency: 0.1MHz
Number of channels: 1
Case: DIP7
Mounting: THT
Operating temperature: -40...140°C
Topology: flyback
Input voltage: 80...265V
Breakdown voltage: 700V
Duty cycle factor: 0...80%
Power: 26.5/14.5/16W
Application: SMPS
Operating voltage: 10...25.5V DC
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PWM controller; 2.2A; 100kHz; Ch: 1; DIP7; flyback; 0÷80%
Type of integrated circuit: PMIC
Kind of integrated circuit: PWM controller
Output current: 2.2A
Frequency: 0.1MHz
Number of channels: 1
Case: DIP7
Mounting: THT
Operating temperature: -40...140°C
Topology: flyback
Input voltage: 80...265V
Breakdown voltage: 700V
Duty cycle factor: 0...80%
Power: 26.5/14.5/16W
Application: SMPS
Operating voltage: 10...25.5V DC
Produkt ist nicht verfügbar
Im Einkaufswagen
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| IRFS4115TRLPBF |
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 70A; Idm: 396A; 375W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 70A
Pulsed drain current: 396A
Power dissipation: 375W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 12.1mΩ
Mounting: SMD
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 70A; Idm: 396A; 375W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 70A
Pulsed drain current: 396A
Power dissipation: 375W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 12.1mΩ
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
Mindestbestellmenge: 800 Stücke
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| BCW60BE6327 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 32V; 0.1A; 0.33W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 32V
Collector current: 0.1A
Power dissipation: 0.33W
Case: SOT23
Mounting: SMD
Frequency: 250MHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 32V; 0.1A; 0.33W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 32V
Collector current: 0.1A
Power dissipation: 0.33W
Case: SOT23
Mounting: SMD
Frequency: 250MHz
auf Bestellung 1 Stücke:
Lieferzeit 14-21 Tag (e)
| BSP372NH6327XTSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 1.8A; 1.8W; SOT223
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 1.8A
Power dissipation: 1.8W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 0.27Ω
Mounting: SMD
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 1.8A; 1.8W; SOT223
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 1.8A
Power dissipation: 1.8W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 0.27Ω
Mounting: SMD
Kind of channel: enhancement
auf Bestellung 867 Stücke:
Lieferzeit 14-21 Tag (e)
| XMC4800F100F1024AAXQMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-LQFP-100; 200kBSRAM,1024kBFLASH
Type of integrated circuit: ARM microcontroller
Case: PG-LQFP-100
Memory: 200kB SRAM; 1MB FLASH
Number of inputs/outputs: 75
Supply voltage: 3.3V DC
Interface: CAN x6; EBI; GPIO; I2C; I2S; SPI; UART
Integrated circuit features: clock gaiting; DSP; EEPROM emulation (DataFlash); RTC; watchdog
Number of A/D channels: 18
Kind of architecture: Cortex M4
Family: XMC4800
Operating temperature: -40...85°C
Kind of core: 32-bit
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-LQFP-100; 200kBSRAM,1024kBFLASH
Type of integrated circuit: ARM microcontroller
Case: PG-LQFP-100
Memory: 200kB SRAM; 1MB FLASH
Number of inputs/outputs: 75
Supply voltage: 3.3V DC
Interface: CAN x6; EBI; GPIO; I2C; I2S; SPI; UART
Integrated circuit features: clock gaiting; DSP; EEPROM emulation (DataFlash); RTC; watchdog
Number of A/D channels: 18
Kind of architecture: Cortex M4
Family: XMC4800
Operating temperature: -40...85°C
Kind of core: 32-bit
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| S26KS256SDPBHB023 |
Hersteller: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 256MbFLASH; HyperBus; 166MHz; 1.7÷1.95V; FBGA24
Application: automotive
Kind of memory: NOR
Type of integrated circuit: FLASH memory
Case: FBGA24
Interface: HyperBus
Kind of package: reel; tape
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...105°C
Operating voltage: 1.7...1.95V
Operating frequency: 166MHz
Memory: 256Mb FLASH
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 256MbFLASH; HyperBus; 166MHz; 1.7÷1.95V; FBGA24
Application: automotive
Kind of memory: NOR
Type of integrated circuit: FLASH memory
Case: FBGA24
Interface: HyperBus
Kind of package: reel; tape
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...105°C
Operating voltage: 1.7...1.95V
Operating frequency: 166MHz
Memory: 256Mb FLASH
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
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Stück im Wert von UAH
| S26KS256SDPBHI020 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 256MbFLASH; HyperBus; 166MHz; 1.7÷1.95V; FBGA24
Kind of memory: NOR
Type of integrated circuit: FLASH memory
Case: FBGA24
Interface: HyperBus
Kind of package: in-tray
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...85°C
Operating voltage: 1.7...1.95V
Operating frequency: 166MHz
Memory: 256Mb FLASH
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 256MbFLASH; HyperBus; 166MHz; 1.7÷1.95V; FBGA24
Kind of memory: NOR
Type of integrated circuit: FLASH memory
Case: FBGA24
Interface: HyperBus
Kind of package: in-tray
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...85°C
Operating voltage: 1.7...1.95V
Operating frequency: 166MHz
Memory: 256Mb FLASH
Produkt ist nicht verfügbar
Mindestbestellmenge: 1690 Stücke
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Stück im Wert von UAH
| S26KS256SDPBHM020 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 256MbFLASH; HyperBus; 166MHz; 1.7÷1.95V; FBGA24
Application: automotive
Kind of memory: NOR
Type of integrated circuit: FLASH memory
Case: FBGA24
Interface: HyperBus
Kind of package: in-tray
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...125°C
Operating voltage: 1.7...1.95V
Operating frequency: 166MHz
Memory: 256Mb FLASH
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 256MbFLASH; HyperBus; 166MHz; 1.7÷1.95V; FBGA24
Application: automotive
Kind of memory: NOR
Type of integrated circuit: FLASH memory
Case: FBGA24
Interface: HyperBus
Kind of package: in-tray
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...125°C
Operating voltage: 1.7...1.95V
Operating frequency: 166MHz
Memory: 256Mb FLASH
Produkt ist nicht verfügbar
Mindestbestellmenge: 1690 Stücke
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Stück im Wert von UAH
| S26KS256SDPBHV020 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 256MbFLASH; HyperBus; 166MHz; 1.7÷1.95V; FBGA24
Kind of memory: NOR
Type of integrated circuit: FLASH memory
Case: FBGA24
Interface: HyperBus
Kind of package: in-tray
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...105°C
Operating voltage: 1.7...1.95V
Operating frequency: 166MHz
Memory: 256Mb FLASH
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 256MbFLASH; HyperBus; 166MHz; 1.7÷1.95V; FBGA24
Kind of memory: NOR
Type of integrated circuit: FLASH memory
Case: FBGA24
Interface: HyperBus
Kind of package: in-tray
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...105°C
Operating voltage: 1.7...1.95V
Operating frequency: 166MHz
Memory: 256Mb FLASH
Produkt ist nicht verfügbar
Mindestbestellmenge: 1690 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| IPB065N15N3GATMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 130A; 300W; PG-TO263-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 130A
Power dissipation: 300W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 6.5mΩ
Mounting: SMD
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 130A; 300W; PG-TO263-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 130A
Power dissipation: 300W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 6.5mΩ
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
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Stück im Wert von UAH
| ITS4200SMEOHUMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 0.7A; Ch: 1; N-Channel; SMD; SOT223-4
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 0.7A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: SOT223-4
Supply voltage: 11...45V DC
Technology: Industrial PROFET
Operating temperature: -40...125°C
Kind of package: reel; tape
On-state resistance: 0.15Ω
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 0.7A; Ch: 1; N-Channel; SMD; SOT223-4
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 0.7A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: SOT223-4
Supply voltage: 11...45V DC
Technology: Industrial PROFET
Operating temperature: -40...125°C
Kind of package: reel; tape
On-state resistance: 0.15Ω
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| ITS4200SMENHUMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 0.7A; Ch: 1; N-Channel; SMD; SOT223-4
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 0.7A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: SOT223-4
Supply voltage: 5...34V DC
Technology: Industrial PROFET
Operating temperature: -40...125°C
Kind of package: reel; tape
On-state resistance: 0.16Ω
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 0.7A; Ch: 1; N-Channel; SMD; SOT223-4
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 0.7A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: SOT223-4
Supply voltage: 5...34V DC
Technology: Industrial PROFET
Operating temperature: -40...125°C
Kind of package: reel; tape
On-state resistance: 0.16Ω
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IPP50R190CEXKSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 18.5A; 127W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 18.5A
Power dissipation: 127W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.19Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 18.5A; 127W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 18.5A
Power dissipation: 127W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.19Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 669 Stücke:
Lieferzeit 14-21 Tag (e)
| IRFB4620PBF |
|
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 25A; 144W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 25A
Power dissipation: 144W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 72.5mΩ
Mounting: THT
Gate charge: 25nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 25A; 144W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 25A
Power dissipation: 144W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 72.5mΩ
Mounting: THT
Gate charge: 25nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 285 Stücke:
Lieferzeit 14-21 Tag (e)
| IPW60R075CPFKSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 39A; 313W; PG-TO247-3
Type of transistor: N-MOSFET
On-state resistance: 75mΩ
Mounting: THT
Power dissipation: 313W
Polarisation: unipolar
Technology: CoolMOS™ CP
Drain current: 39A
Kind of channel: enhancement
Drain-source voltage: 600V
Gate-source voltage: ±20V
Kind of package: tube
Case: PG-TO247-3
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 39A; 313W; PG-TO247-3
Type of transistor: N-MOSFET
On-state resistance: 75mΩ
Mounting: THT
Power dissipation: 313W
Polarisation: unipolar
Technology: CoolMOS™ CP
Drain current: 39A
Kind of channel: enhancement
Drain-source voltage: 600V
Gate-source voltage: ±20V
Kind of package: tube
Case: PG-TO247-3
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IRS25411STRPBF |
|
Hersteller: INFINEON TECHNOLOGIES
Category: LED drivers
Description: IC: driver; buck; high-/low-side,LED driver; SO8; -700÷500mA; Ch: 2
Output current: -700...500mA
Type of integrated circuit: driver
Operating temperature: -25...125°C
Voltage class: 600V
Turn-on time: 320ns
Power: 625mW
Kind of package: reel; tape
Case: SO8
Turn-off time: 180ns
Kind of integrated circuit: high-/low-side; LED driver
Number of channels: 2
Topology: buck
Mounting: SMD
Supply voltage: 8...16.6V DC
Category: LED drivers
Description: IC: driver; buck; high-/low-side,LED driver; SO8; -700÷500mA; Ch: 2
Output current: -700...500mA
Type of integrated circuit: driver
Operating temperature: -25...125°C
Voltage class: 600V
Turn-on time: 320ns
Power: 625mW
Kind of package: reel; tape
Case: SO8
Turn-off time: 180ns
Kind of integrated circuit: high-/low-side; LED driver
Number of channels: 2
Topology: buck
Mounting: SMD
Supply voltage: 8...16.6V DC
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| IRF2204PBF |
|
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 210A; 330W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 210A
Power dissipation: 330W
Case: TO220AB
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 210A; 330W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 210A
Power dissipation: 330W
Case: TO220AB
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 2 Stücke:
Lieferzeit 14-21 Tag (e)
| IRFSL4010PBF |
|
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 180A; 375W; TO262
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 180A
Case: TO262
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Power dissipation: 375W
Technology: HEXFET®
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 180A; 375W; TO262
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 180A
Case: TO262
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Power dissipation: 375W
Technology: HEXFET®
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Lieferzeit 14-21 Tag (e)
| IRFR7446TRPBF |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 56A; 98W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 56A
Power dissipation: 98W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 56A; 98W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 56A
Power dissipation: 98W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
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| IPD033N06NATMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 90A; 107W; DPAK,TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 90A
Power dissipation: 107W
Case: DPAK; TO252
Mounting: SMD
Gate charge: 44nC
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 90A; 107W; DPAK,TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 90A
Power dissipation: 107W
Case: DPAK; TO252
Mounting: SMD
Gate charge: 44nC
Kind of channel: enhancement
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
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| IPP023N04NGXKSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 90A; 167W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 90A
Power dissipation: 167W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 2.3mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 90A; 167W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 90A
Power dissipation: 167W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 2.3mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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| IPD90N04S403ATMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; N; 40V; 90A; Idm: 90A; 94W; DPAK
Type of transistor: N-MOSFET
Drain-source voltage: 40V
Drain current: 90A
Power dissipation: 94W
Case: DPAK
Gate-source voltage: 20V
Mounting: SMD
Kind of channel: enhancement
Pulsed drain current: 90A
Application: automotive industry
Technology: MOSFET
Polarisation: N
Gate charge: 66.8nC
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; N; 40V; 90A; Idm: 90A; 94W; DPAK
Type of transistor: N-MOSFET
Drain-source voltage: 40V
Drain current: 90A
Power dissipation: 94W
Case: DPAK
Gate-source voltage: 20V
Mounting: SMD
Kind of channel: enhancement
Pulsed drain current: 90A
Application: automotive industry
Technology: MOSFET
Polarisation: N
Gate charge: 66.8nC
auf Bestellung 10000 Stücke:
Lieferzeit 14-21 Tag (e)
| IPD90N04S4L04ATMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; N; 40V; 90A; 71W; DPAK,TO252
Type of transistor: N-MOSFET
Drain-source voltage: 40V
Drain current: 90A
Power dissipation: 71W
Case: DPAK; TO252
Gate-source voltage: 20V
On-state resistance: 3.2mΩ
Mounting: SMD
Kind of channel: enhancement
Application: automotive industry
Technology: MOSFET
Polarisation: N
Gate charge: 60nC
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; N; 40V; 90A; 71W; DPAK,TO252
Type of transistor: N-MOSFET
Drain-source voltage: 40V
Drain current: 90A
Power dissipation: 71W
Case: DPAK; TO252
Gate-source voltage: 20V
On-state resistance: 3.2mΩ
Mounting: SMD
Kind of channel: enhancement
Application: automotive industry
Technology: MOSFET
Polarisation: N
Gate charge: 60nC
auf Bestellung 24937 Stücke:
Lieferzeit 14-21 Tag (e)
| TLE49421CHAMA2 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: Hall Sensors
Description: Sensor: Hall; THT; Temp: -40÷150°C; TLE
Type of sensor: Hall
Mounting: THT
Operating temperature: -40...150°C
Manufacturer series: TLE
Category: Hall Sensors
Description: Sensor: Hall; THT; Temp: -40÷150°C; TLE
Type of sensor: Hall
Mounting: THT
Operating temperature: -40...150°C
Manufacturer series: TLE
auf Bestellung 172500 Stücke:
Lieferzeit 14-21 Tag (e)
| 2EDS8165HXUMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-side,MOSFET gate driver
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: high-side; MOSFET gate driver
Technology: EiceDRIVER™
Case: PG-DSO-16
Output current: -2...1A
Number of channels: 2
Integrated circuit features: galvanically isolated
Mounting: SMD
Kind of package: reel; tape
Supply voltage: 3...3.5V; 4.5...20V
Voltage class: 650V
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-side,MOSFET gate driver
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: high-side; MOSFET gate driver
Technology: EiceDRIVER™
Case: PG-DSO-16
Output current: -2...1A
Number of channels: 2
Integrated circuit features: galvanically isolated
Mounting: SMD
Kind of package: reel; tape
Supply voltage: 3...3.5V; 4.5...20V
Voltage class: 650V
Produkt ist nicht verfügbar
Im Einkaufswagen
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| IGZ100N65H5XKSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 101A; 268W; TO247-4; H5
Type of transistor: IGBT
Technology: TRENCHSTOP™ 5
Collector-emitter voltage: 650V
Collector current: 101A
Power dissipation: 268W
Case: TO247-4
Gate-emitter voltage: ±20V
Pulsed collector current: 400A
Mounting: THT
Gate charge: 0.21µC
Kind of package: tube
Manufacturer series: H5
Turn-on time: 40ns
Turn-off time: 485ns
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 101A; 268W; TO247-4; H5
Type of transistor: IGBT
Technology: TRENCHSTOP™ 5
Collector-emitter voltage: 650V
Collector current: 101A
Power dissipation: 268W
Case: TO247-4
Gate-emitter voltage: ±20V
Pulsed collector current: 400A
Mounting: THT
Gate charge: 0.21µC
Kind of package: tube
Manufacturer series: H5
Turn-on time: 40ns
Turn-off time: 485ns
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BAT1704E6327HTSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT23; SMD; 4V; 0.13A; 150mW
Type of diode: Schottky switching
Case: SOT23
Mounting: SMD
Max. off-state voltage: 4V
Load current: 0.13A
Semiconductor structure: double series
Max. forward voltage: 0.6V
Power dissipation: 0.15W
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT23; SMD; 4V; 0.13A; 150mW
Type of diode: Schottky switching
Case: SOT23
Mounting: SMD
Max. off-state voltage: 4V
Load current: 0.13A
Semiconductor structure: double series
Max. forward voltage: 0.6V
Power dissipation: 0.15W
auf Bestellung 408 Stücke:
Lieferzeit 14-21 Tag (e)
| FZ800R45KL3B5NOSA2 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: IGBT modules
Description: Module: IGBT; Ic: 800A; 9kW; Field Stop,Trench; screw
Power dissipation: 9kW
Technology: Field Stop; Trench
Mechanical mounting: screw
Pulsed collector current: 1.6kA
Gate-emitter voltage: ±20V
Collector current: 800A
Type of semiconductor module: IGBT
Category: IGBT modules
Description: Module: IGBT; Ic: 800A; 9kW; Field Stop,Trench; screw
Power dissipation: 9kW
Technology: Field Stop; Trench
Mechanical mounting: screw
Pulsed collector current: 1.6kA
Gate-emitter voltage: ±20V
Collector current: 800A
Type of semiconductor module: IGBT
Produkt ist nicht verfügbar
Mindestbestellmenge: 2 Stücke
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| AIDK10S65C5ATMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; PG-TO263-2; SiC; SMD; 650V; 10A; 53W
Max. forward impulse current: 33A
Max. forward voltage: 2.1V
Power dissipation: 53W
Technology: CoolSiC™ 5G; SiC
Max. off-state voltage: 650V
Load current: 10A
Kind of package: reel; tape
Semiconductor structure: single diode
Leakage current: 12µA
Case: PG-TO263-2
Type of diode: Schottky rectifying
Mounting: SMD
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; PG-TO263-2; SiC; SMD; 650V; 10A; 53W
Max. forward impulse current: 33A
Max. forward voltage: 2.1V
Power dissipation: 53W
Technology: CoolSiC™ 5G; SiC
Max. off-state voltage: 650V
Load current: 10A
Kind of package: reel; tape
Semiconductor structure: single diode
Leakage current: 12µA
Case: PG-TO263-2
Type of diode: Schottky rectifying
Mounting: SMD
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
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| IAUC60N10S5L110ATMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 42A; Idm: 240A; 88W
Pulsed drain current: 240A
Power dissipation: 88W
Gate charge: 24.1nC
Polarisation: unipolar
Technology: OptiMOS™ 5
Drain current: 42A
Kind of channel: enhancement
Drain-source voltage: 100V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: PG-TDSON-8
On-state resistance: 15.3mΩ
Mounting: SMD
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 42A; Idm: 240A; 88W
Pulsed drain current: 240A
Power dissipation: 88W
Gate charge: 24.1nC
Polarisation: unipolar
Technology: OptiMOS™ 5
Drain current: 42A
Kind of channel: enhancement
Drain-source voltage: 100V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: PG-TDSON-8
On-state resistance: 15.3mΩ
Mounting: SMD
Produkt ist nicht verfügbar
Mindestbestellmenge: 5000 Stücke
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Stück im Wert von UAH
| BTS50451EJAXUMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 4A; Ch: 1; N-Channel; SMD; PG-DSO-8-EP
Mounting: SMD
Supply voltage: 5...28V DC
Output current: 4A
Type of integrated circuit: power switch
Kind of output: N-Channel
Power dissipation: 1.6W
Operating temperature: -40...150°C
Technology: PROFET™+ 12V
Case: PG-DSO-8-EP
Kind of integrated circuit: high-side
Number of channels: 1
On-state resistance: 45mΩ
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 4A; Ch: 1; N-Channel; SMD; PG-DSO-8-EP
Mounting: SMD
Supply voltage: 5...28V DC
Output current: 4A
Type of integrated circuit: power switch
Kind of output: N-Channel
Power dissipation: 1.6W
Operating temperature: -40...150°C
Technology: PROFET™+ 12V
Case: PG-DSO-8-EP
Kind of integrated circuit: high-side
Number of channels: 1
On-state resistance: 45mΩ
Produkt ist nicht verfügbar
Mindestbestellmenge: 5000 Stücke
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| ISA220280C03LMDSXTMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar
Mounting: SMD
Polarisation: unipolar
Type of transistor: N-MOSFET x2
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar
Mounting: SMD
Polarisation: unipolar
Type of transistor: N-MOSFET x2
Produkt ist nicht verfügbar
Mindestbestellmenge: 4000 Stücke
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| CY7C65213-28PVXIT |
|
Hersteller: INFINEON TECHNOLOGIES
Category: USB interfaces - integrated circuits
Description: IC: USB interface; GPIO x8,UART; USB controller; Full Speed
Type of integrated circuit: USB interface
Case: SSOP28
Mounting: SMD
Interface: GPIO x8; UART
Kind of integrated circuit: USB controller
Supply voltage: 1.71...5.5V DC
Data transfer rate: 12Mbps
Operating temperature: -40...85°C
Integrated circuit features: bridge
Kind of package: reel; tape
USB speed: Full Speed
Category: USB interfaces - integrated circuits
Description: IC: USB interface; GPIO x8,UART; USB controller; Full Speed
Type of integrated circuit: USB interface
Case: SSOP28
Mounting: SMD
Interface: GPIO x8; UART
Kind of integrated circuit: USB controller
Supply voltage: 1.71...5.5V DC
Data transfer rate: 12Mbps
Operating temperature: -40...85°C
Integrated circuit features: bridge
Kind of package: reel; tape
USB speed: Full Speed
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
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| CY7C65213A-28PVXI |
|
Hersteller: INFINEON TECHNOLOGIES
Category: USB interfaces - integrated circuits
Description: IC: USB interface; GPIO x8,UART; USB controller; Full Speed
Type of integrated circuit: USB interface
Interface: GPIO x8; UART
Kind of integrated circuit: USB controller
USB speed: Full Speed
Data transfer rate: 12Mbps
Supply voltage: 1.71...5.5V DC
Kind of package: in-tray; tube
Case: SSOP28
Integrated circuit features: bridge
Mounting: SMD
Operating temperature: -40...85°C
Category: USB interfaces - integrated circuits
Description: IC: USB interface; GPIO x8,UART; USB controller; Full Speed
Type of integrated circuit: USB interface
Interface: GPIO x8; UART
Kind of integrated circuit: USB controller
USB speed: Full Speed
Data transfer rate: 12Mbps
Supply voltage: 1.71...5.5V DC
Kind of package: in-tray; tube
Case: SSOP28
Integrated circuit features: bridge
Mounting: SMD
Operating temperature: -40...85°C
Produkt ist nicht verfügbar
Mindestbestellmenge: 1175 Stücke
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| CY7C65213-28PVXI |
|
Hersteller: INFINEON TECHNOLOGIES
Category: USB interfaces - integrated circuits
Description: IC: USB interface; GPIO x8,UART; USB controller; Full Speed
Type of integrated circuit: USB interface
Case: SSOP28
Mounting: SMD
Interface: GPIO x8; UART
Kind of integrated circuit: USB controller
Supply voltage: 1.71...5.5V DC
Data transfer rate: 12Mbps
Operating temperature: -40...85°C
Integrated circuit features: bridge
Kind of package: in-tray; tube
USB speed: Full Speed
Category: USB interfaces - integrated circuits
Description: IC: USB interface; GPIO x8,UART; USB controller; Full Speed
Type of integrated circuit: USB interface
Case: SSOP28
Mounting: SMD
Interface: GPIO x8; UART
Kind of integrated circuit: USB controller
Supply voltage: 1.71...5.5V DC
Data transfer rate: 12Mbps
Operating temperature: -40...85°C
Integrated circuit features: bridge
Kind of package: in-tray; tube
USB speed: Full Speed
Produkt ist nicht verfügbar
Mindestbestellmenge: 2350 Stücke
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| CY7C65223-24LTXI |
|
Hersteller: INFINEON TECHNOLOGIES
Category: USB interfaces - integrated circuits
Description: IC: USB interface; GPIO x4,UART; USB controller; Full Speed
Type of integrated circuit: USB interface
Case: QFN24
Mounting: SMD
Interface: GPIO x4; UART
Kind of integrated circuit: USB controller
Supply voltage: 1.71...5.5V DC
Data transfer rate: 12Mbps
Operating temperature: -40...85°C
Integrated circuit features: bridge
Kind of package: in-tray; tube
USB speed: Full Speed
Category: USB interfaces - integrated circuits
Description: IC: USB interface; GPIO x4,UART; USB controller; Full Speed
Type of integrated circuit: USB interface
Case: QFN24
Mounting: SMD
Interface: GPIO x4; UART
Kind of integrated circuit: USB controller
Supply voltage: 1.71...5.5V DC
Data transfer rate: 12Mbps
Operating temperature: -40...85°C
Integrated circuit features: bridge
Kind of package: in-tray; tube
USB speed: Full Speed
Produkt ist nicht verfügbar
Mindestbestellmenge: 2450 Stücke
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Stück im Wert von UAH
| CY7C65213-32LTXI |
|
Hersteller: INFINEON TECHNOLOGIES
Category: USB interfaces - integrated circuits
Description: IC: USB interface; GPIO x8,UART; USB controller; Full Speed
Type of integrated circuit: USB interface
Interface: GPIO x8; UART
Kind of integrated circuit: USB controller
USB speed: Full Speed
Data transfer rate: 12Mbps
Supply voltage: 1.71...5.5V DC
Kind of package: in-tray; tube
Case: QFN32
Integrated circuit features: bridge
Mounting: SMD
Operating temperature: -40...85°C
Category: USB interfaces - integrated circuits
Description: IC: USB interface; GPIO x8,UART; USB controller; Full Speed
Type of integrated circuit: USB interface
Interface: GPIO x8; UART
Kind of integrated circuit: USB controller
USB speed: Full Speed
Data transfer rate: 12Mbps
Supply voltage: 1.71...5.5V DC
Kind of package: in-tray; tube
Case: QFN32
Integrated circuit features: bridge
Mounting: SMD
Operating temperature: -40...85°C
Produkt ist nicht verfügbar
Mindestbestellmenge: 4900 Stücke
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| CY7C65213A-32LTXI |
|
Hersteller: INFINEON TECHNOLOGIES
Category: USB interfaces - integrated circuits
Description: IC: USB interface; GPIO x8,UART; USB controller; Full Speed
Type of integrated circuit: USB interface
Interface: GPIO x8; UART
Kind of integrated circuit: USB controller
USB speed: Full Speed
Data transfer rate: 12Mbps
Supply voltage: 1.71...5.5V DC
Kind of package: in-tray; tube
Case: QFN32
Integrated circuit features: bridge
Mounting: SMD
Operating temperature: -40...85°C
Category: USB interfaces - integrated circuits
Description: IC: USB interface; GPIO x8,UART; USB controller; Full Speed
Type of integrated circuit: USB interface
Interface: GPIO x8; UART
Kind of integrated circuit: USB controller
USB speed: Full Speed
Data transfer rate: 12Mbps
Supply voltage: 1.71...5.5V DC
Kind of package: in-tray; tube
Case: QFN32
Integrated circuit features: bridge
Mounting: SMD
Operating temperature: -40...85°C
Produkt ist nicht verfügbar
Mindestbestellmenge: 4900 Stücke
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