Produkte > INFINEON TECHNOLOGIES > Alle Produkte des Herstellers INFINEON TECHNOLOGIES (129128) > Seite 2098 nach 2153
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
| CYBLE-222014-01 | INFINEON TECHNOLOGIES |
 Category: IoT (WiFi/Bluetooth) modulesDescription: Module: Bluetooth Low Energy; Bluetooth: 4.2,BLE; 3dBm; SMD Transmitter output power: 3dBm Mounting: SMD Supply voltage: 1.8...4.5V DC Type of communications module: Bluetooth Low Energy Dimensions: 10x10mm Bluetooth version: 4.2; BLE Receiver sensitivity: -91dBm Interface: I2C; SPI; UART Kind of module: wireless Frequency: 2.4GHz |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 500 Stücke Im Einkaufswagen Stück im Wert von UAH | |
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IPP026N10NF2SAKMA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 184A; 250W; TO220-3 Mounting: THT Gate charge: 103nC Polarisation: unipolar Drain current: 184A Kind of channel: enhancement Drain-source voltage: 100V Type of transistor: N-MOSFET Case: TO220-3 On-state resistance: 2.6mΩ Power dissipation: 250W |
auf Bestellung 92 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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BCR135SH6327 | INFINEON TECHNOLOGIES |
Category: NPN SMD transistors Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 0.25W; SOT363; R1: 10kΩ Type of transistor: NPN x2 Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.25W Case: SOT363 Mounting: SMD Frequency: 150MHz Base resistor: 10kΩ Base-emitter resistor: 47kΩ |
auf Bestellung 632 Stücke: Lieferzeit 14-21 Tag (e) |
Mindestbestellmenge: 10 Stücke Im Einkaufswagen Stück im Wert von UAH |
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BCR35PNH6327 | INFINEON TECHNOLOGIES |
Category: Complementary transistors Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V; 0.1A Type of transistor: NPN / PNP Polarisation: bipolar Kind of transistor: BRT; complementary pair Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.25W Case: SOT363 Mounting: SMD Frequency: 150MHz Base resistor: 10kΩ Base-emitter resistor: 47kΩ |
auf Bestellung 185 Stücke: Lieferzeit 14-21 Tag (e) |
Mindestbestellmenge: 5 Stücke Im Einkaufswagen Stück im Wert von UAH |
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BCR135WH6327 | INFINEON TECHNOLOGIES |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.25W; SOT323; R1: 10kΩ Type of transistor: NPN Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.25W Case: SOT323 Mounting: SMD Frequency: 150MHz Base resistor: 10kΩ Base-emitter resistor: 47kΩ |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH |
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BCR10PNH6327 | INFINEON TECHNOLOGIES |
Category: Complementary transistors Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V; 0.1A Type of transistor: NPN / PNP Polarisation: bipolar Kind of transistor: BRT; complementary pair Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.25W Case: SOT363 Mounting: SMD Frequency: 130MHz Base resistor: 10kΩ Base-emitter resistor: 10kΩ |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH |
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BCR35PNH6433XTMA1 | INFINEON TECHNOLOGIES |
Category: Complementary transistors Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V; 0.1A Type of transistor: NPN / PNP Polarisation: bipolar Kind of transistor: BRT; complementary pair Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.25W Case: SOT363 Mounting: SMD Frequency: 150MHz Base resistor: 10kΩ Base-emitter resistor: 47kΩ |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 10000 Stücke Im Einkaufswagen Stück im Wert von UAH |
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SN7002NH6433XTMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 0.16A; 0.36W; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.16A Power dissipation: 0.36W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 5Ω Mounting: SMD Kind of channel: enhancement Technology: SIPMOS™ |
auf Bestellung 4924 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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IRF2907ZSTRLPBF | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 75V; 170A; 330W; D2PAK Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 75V Drain current: 170A Power dissipation: 330W Case: D2PAK Mounting: SMD Kind of package: reel Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 800 Stücke Im Einkaufswagen Stück im Wert von UAH |
| CY7C65210A-24LTXIT | INFINEON TECHNOLOGIES |
Category: USB interfaces - integrated circuits Description: IC: interface; GPIO x11,I2C; USB controller; Full Speed; QFN24 Interface: GPIO x11; I2C Case: QFN24 Kind of package: reel; tape Mounting: SMD Operating temperature: -40...85°C Number of ports: 1 Supply voltage: 1.71...5.5V DC Data transfer rate: 12Mbps USB speed: Full Speed Kind of integrated circuit: USB controller Type of integrated circuit: interface |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH | |
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CY7C65217A-24LTXIT | INFINEON TECHNOLOGIES |
Category: USB interfaces - integrated circuits Description: IC: USB interface; GPIO x9,I2C,UART; USB controller; Full Speed Type of integrated circuit: USB interface Interface: GPIO x9; I2C; UART Kind of integrated circuit: USB controller USB speed: Full Speed Data transfer rate: 12Mbps Supply voltage: 1.71...5.5V DC Kind of package: reel; tape Case: QFN24 Mounting: SMD Operating temperature: -40...85°C |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH |
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CY7C65211A-24LTXIT | INFINEON TECHNOLOGIES |
Category: USB interfaces - integrated circuits Description: IC: USB interface; GPIO x10,I2C,SPI,UART; USB controller; QFN24 Type of integrated circuit: USB interface Interface: GPIO x10; I2C; SPI; UART Kind of integrated circuit: USB controller USB speed: Full Speed Data transfer rate: 12Mbps Supply voltage: 1.71...5.5V DC Kind of package: reel; tape Case: QFN24 Integrated circuit features: bridge Mounting: SMD Operating temperature: -40...85°C |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH |
| CY7C65215A-32LTXIT | INFINEON TECHNOLOGIES |
Category: USB interfaces - integrated circuits Description: IC: USB interface; GPIO x17,I2C,SPI,UART; USB controller; QFN32 Type of integrated circuit: USB interface Interface: GPIO x17; I2C; SPI; UART Kind of integrated circuit: USB controller USB speed: Full Speed Data transfer rate: 12Mbps Supply voltage: 1.71...5.5V DC Kind of package: reel; tape Case: QFN32 Integrated circuit features: bridge Mounting: SMD Operating temperature: -40...85°C |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH | |
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1EDC30I12MHXUMA1 | INFINEON TECHNOLOGIES |
Category: MOSFET/IGBT drivers Description: IC: driver; single transistor; high-side,IGBT gate driver; -3÷3A Mounting: SMD Output current: -3...3A Type of integrated circuit: driver Integrated circuit features: active Miller clamp; galvanically isolated Technology: EiceDRIVER™ Voltage class: 600/650/1200V Kind of package: reel; tape Case: PG-DSO-8 Kind of integrated circuit: high-side; IGBT gate driver Number of channels: 1 Topology: single transistor Supply voltage: 3.1...17V; 13...18V |
auf Bestellung 950 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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1EDC10I12MHXUMA1 | INFINEON TECHNOLOGIES |
Category: MOSFET/IGBT drivers Description: IC: driver; single transistor; high-side,IGBT gate driver; -1÷1A Mounting: SMD Output current: -1...1A Type of integrated circuit: driver Integrated circuit features: active Miller clamp; galvanically isolated Technology: EiceDRIVER™ Voltage class: 600/650/1200V Kind of package: reel; tape Case: PG-DSO-8 Kind of integrated circuit: high-side; IGBT gate driver Number of channels: 1 Topology: single transistor Supply voltage: 3.1...17V; 13...18V |
auf Bestellung 22 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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IRL100HS121 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 7.8A; 5.8W; PQFN2X2 Type of transistor: N-MOSFET Technology: OptiMOS™ 5 Polarisation: unipolar Drain-source voltage: 100V Drain current: 7.8A Power dissipation: 5.8W Case: PQFN2X2 Gate-source voltage: ±20V On-state resistance: 42mΩ Mounting: SMD Gate charge: 3.7nC Kind of package: reel Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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IPA95R1K2P7XKSA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 950V; 3.7A; 27W; TO220FP; ESD Type of transistor: N-MOSFET Technology: CoolMOS™ P7 Polarisation: unipolar Drain-source voltage: 950V Drain current: 3.7A Power dissipation: 27W Case: TO220FP Gate-source voltage: ±20V On-state resistance: 1.2Ω Mounting: THT Gate charge: 15nC Kind of package: tube Kind of channel: enhancement Version: ESD |
auf Bestellung 79 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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IDW10G65C5XKSA1 | INFINEON TECHNOLOGIES |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 10A; PG-TO247-3; Ir: 2uA Case: PG-TO247-3 Load current: 10A Kind of package: tube Semiconductor structure: single diode Leakage current: 2µA Type of diode: Schottky rectifying Mounting: THT Max. forward impulse current: 46A Max. forward voltage: 1.8V Power dissipation: 65W Technology: CoolSiC™ 5G; SiC Max. off-state voltage: 650V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| S29GL256S10FHI020 | INFINEON TECHNOLOGIES |
Category: Parallel FLASH memories - integ. circ. Description: IC: FLASH memory; 256MbFLASH; CFI,parallel; 100ns; BGA64; parallel Type of integrated circuit: FLASH memory Kind of memory: NOR Memory: 256Mb FLASH Interface: CFI; parallel Operating voltage: 2.7...3.6V Case: BGA64 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Access time: 100ns Kind of package: in-tray |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 900 Stücke Im Einkaufswagen Stück im Wert von UAH | |
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BSC520N15NS3GATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 150V; 21A; 57W; PG-TDSON-8 Type of transistor: N-MOSFET Technology: OptiMOS™ 3 Polarisation: unipolar Drain-source voltage: 150V Drain current: 21A Power dissipation: 57W Case: PG-TDSON-8 Gate-source voltage: ±20V On-state resistance: 52mΩ Mounting: SMD Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 5000 Stücke Im Einkaufswagen Stück im Wert von UAH |
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IFX007TAUMA1 | INFINEON TECHNOLOGIES |
Category: Motor and PWM drivers Description: IC: driver; MOSFET half-bridge; IMC,motor controller; PG-TO263-7 Type of integrated circuit: driver Topology: MOSFET half-bridge Kind of integrated circuit: IMC; motor controller Technology: NovalithIC™ Case: PG-TO263-7 Output current: 9A Number of channels: 1 Mounting: SMD On-state resistance: 10mΩ Operating temperature: -40...150°C Application: DC motors Operating voltage: 5.5...40V DC Kind of package: reel; tape |
auf Bestellung 974 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| S25HS02GTDPBHB053 | INFINEON TECHNOLOGIES |
Category: Serial FLASH memories - integrated circ. Description: IC: FLASH memory; 2GbFLASH; QUAD SPI; 133MHz; 1.7÷2V; BGA24; serial Operating temperature: -40...105°C Type of integrated circuit: FLASH memory Application: automotive Memory: 2Gb FLASH Operating frequency: 133MHz Kind of interface: serial Kind of package: reel; tape Case: BGA24 Interface: QUAD SPI Operating voltage: 1.7...2V Kind of memory: NOR Mounting: SMD |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2000 Stücke Im Einkaufswagen Stück im Wert von UAH | |
| S25HS02GTDPBHV053 | INFINEON TECHNOLOGIES |
Category: Serial FLASH memories - integrated circ. Description: IC: FLASH memory; 2GbFLASH; QUAD SPI; 133MHz; 1.7÷2V; BGA24; serial Operating temperature: -40...105°C Type of integrated circuit: FLASH memory Memory: 2Gb FLASH Operating frequency: 133MHz Kind of interface: serial Kind of package: reel; tape Case: BGA24 Interface: QUAD SPI Operating voltage: 1.7...2V Kind of memory: NOR Mounting: SMD |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2000 Stücke Im Einkaufswagen Stück im Wert von UAH | |
| S28HS02GTFPBHV050 | INFINEON TECHNOLOGIES |
Category: Serial FLASH memories - integrated circ. Description: IC: FLASH memory; 2GbFLASH; octal; 166MHz; 1.7÷2V; BGA24; serial Operating temperature: -40...105°C Type of integrated circuit: FLASH memory Memory: 2Gb FLASH Operating frequency: 166MHz Kind of interface: serial Kind of package: in-tray Case: BGA24 Interface: octal Operating voltage: 1.7...2V Kind of memory: NOR Mounting: SMD |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 520 Stücke Im Einkaufswagen Stück im Wert von UAH | |
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IPB107N20NAATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 200V; 88A; 300W; PG-TO263-3 Mounting: SMD Power dissipation: 300W Polarisation: unipolar Technology: OptiMOS™ 3 Drain current: 88A Kind of channel: enhancement Drain-source voltage: 200V Type of transistor: N-MOSFET Gate-source voltage: ±20V Case: PG-TO263-3 On-state resistance: 10.7mΩ |
auf Bestellung 644 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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TLD2314ELXUMA1 | INFINEON TECHNOLOGIES |
Category: LED drivers Description: IC: driver; high-side,LED driver; Litix™; PG-SSOP-14-EP; 120mA Type of integrated circuit: driver Kind of integrated circuit: high-side; LED driver Technology: Litix™ Case: PG-SSOP-14-EP Output current: 0.12A Number of channels: 3 Integrated circuit features: linear dimming; PWM Mounting: SMD Operating voltage: 5.5...40V DC Protection: overheating OTP |
auf Bestellung 2417 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| BAS3005S02LRHE6327XTSA1 | INFINEON TECHNOLOGIES |
Category: SMD Schottky diodes Description: Diode: Schottky switching Type of diode: Schottky switching |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 15000 Stücke Im Einkaufswagen Stück im Wert von UAH | |
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IKCM30F60GAXKMA1 | INFINEON TECHNOLOGIES |
Category: Motor and PWM drivers Description: IC: driver; IGBT three-phase bridge,thermistor; PG-MDIP24; 20kHz Type of integrated circuit: driver Topology: IGBT three-phase bridge; thermistor Kind of integrated circuit: 3-phase motor controller; IPM Technology: ClPOS™ Mini; TRENCHSTOP™ Case: PG-MDIP24 Output current: -20...20A Integrated circuit features: integrated bootstrap functionality Mounting: THT Operating temperature: -40...125°C Operating voltage: 13.5...18.5/0...400V DC Frequency: 20kHz Voltage class: 600V Protection: anti-overload OPP; undervoltage UVP Power dissipation: 30.3W |
auf Bestellung 28 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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IGCM20F60GAXKMA1 | INFINEON TECHNOLOGIES |
Category: Motor and PWM drivers Description: IC: driver; IGBT three-phase bridge,thermistor; -20÷20A; 20kHz Type of integrated circuit: driver Topology: IGBT three-phase bridge; thermistor Kind of integrated circuit: 3-phase motor controller; IPM Case: DIP 36x21 (PG-DIP-24) Output current: -20...20A Integrated circuit features: integrated bootstrap functionality Mounting: THT Operating temperature: -40...125°C Kind of package: tube Frequency: 20kHz Operating voltage: 13.5...18.5/0...400V DC Protection: anti-overload OPP; undervoltage UVP Technology: ClPOS™ Mini; TRENCHSTOP™ Voltage class: 600V |
auf Bestellung 9 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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IKCM10L60GAXKMA1 | INFINEON TECHNOLOGIES |
Category: Motor and PWM drivers Description: IC: driver; IGBT three-phase bridge,thermistor; PG-MDIP24; 20kHz Type of integrated circuit: driver Topology: IGBT three-phase bridge; thermistor Kind of integrated circuit: 3-phase motor controller; IPM Technology: ClPOS™ Mini; TRENCHSTOP™ Case: PG-MDIP24 Output current: -10...10A Integrated circuit features: integrated bootstrap functionality Mounting: THT Operating temperature: -40...125°C Operating voltage: 13.5...18.5/0...400V DC Frequency: 20kHz Voltage class: 600V Power dissipation: 25.2W |
auf Bestellung 280 Stücke: Lieferzeit 14-21 Tag (e) |
Mindestbestellmenge: 280 Stücke Im Einkaufswagen Stück im Wert von UAH |
| IDD03SG60CXTMA2 | INFINEON TECHNOLOGIES |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying Type of diode: Schottky rectifying |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH | |
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IDD03SG60C | INFINEON TECHNOLOGIES |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; PG-TO252-3; SiC; SMD; 600V; 3A; 38W Type of diode: Schottky rectifying Kind of package: reel; tape Semiconductor structure: single diode Mounting: SMD Leakage current: 0.23µA Max. forward voltage: 2.1V Load current: 3A Max. forward impulse current: 9.7A Power dissipation: 38W Technology: CoolSiC™ 3G; SiC Max. off-state voltage: 0.6kV Case: PG-TO252-3 |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH |
| PVI1050NPBFHKLA1 | INFINEON TECHNOLOGIES |
Category: Optocouplers - analog output Description: Optocoupler Type of optocoupler: optocoupler |
auf Bestellung 1300 Stücke: Lieferzeit 14-21 Tag (e) |
Mindestbestellmenge: 50 Stücke Im Einkaufswagen Stück im Wert von UAH | |
| IPG20N10S4L35ATMA1 | INFINEON TECHNOLOGIES |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; OptiMOS™ T2; unipolar; 100V; 17A; Idm: 80A Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 100V Drain current: 17A Pulsed drain current: 80A Power dissipation: 43W Case: PG-TDSON-8-4 Gate-source voltage: ±16V On-state resistance: 35mΩ Mounting: SMD Kind of channel: enhancement Technology: OptiMOS™ T2 |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 5000 Stücke Im Einkaufswagen Stück im Wert von UAH | |
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IPB020N10N5LF | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 120A; 313W; PG-TO263-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 120A Power dissipation: 313W Case: PG-TO263-3 Gate-source voltage: ±20V On-state resistance: 2mΩ Mounting: SMD Kind of channel: enhancement Technology: OptiMOS™ 5 |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1000 Stücke Im Einkaufswagen Stück im Wert von UAH |
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IPT020N10N3ATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 212A; Idm: 1200A; 375W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 212A Pulsed drain current: 1.2kA Power dissipation: 375W Case: PG-HSOF-8 Gate-source voltage: ±20V On-state resistance: 2mΩ Mounting: SMD Gate charge: 156nC Kind of package: tape Kind of channel: enhancement Technology: OptiMOS™ 3 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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IPB020N10N5ATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 120A; 375W; PG-TO263-3 Type of transistor: N-MOSFET Technology: OptiMOS™ 5 Polarisation: unipolar Drain-source voltage: 100V Drain current: 120A Power dissipation: 375W Case: PG-TO263-3 Gate-source voltage: ±20V On-state resistance: 2mΩ Mounting: SMD Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1000 Stücke Im Einkaufswagen Stück im Wert von UAH |
| DD1600S33HE4BPSA1 | INFINEON TECHNOLOGIES |
Category: Diode modules Description: Module: diode Type of semiconductor module: diode |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2 Stücke Im Einkaufswagen Stück im Wert von UAH | |
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IMW65R027M1HXKSA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 39A; Idm: 185A; 189W Type of transistor: N-MOSFET Technology: CoolSiC™; SiC Polarisation: unipolar Drain-source voltage: 650V Drain current: 39A Pulsed drain current: 185A Power dissipation: 189W Case: TO247 Gate-source voltage: -5...23V On-state resistance: 35mΩ Mounting: THT Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| IMZA65R027M1HXKSA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 41A; Idm: 184A; 189W Mounting: THT Technology: CoolSiC™; SiC Kind of channel: enhancement Features of semiconductor devices: Kelvin terminal Type of transistor: N-MOSFET Kind of package: tube Polarisation: unipolar Gate-source voltage: -5...23V On-state resistance: 35mΩ Drain current: 41A Pulsed drain current: 184A Power dissipation: 189W Drain-source voltage: 650V Case: TO247-4 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
| 1EDB6275FXUMA1 | INFINEON TECHNOLOGIES |
Category: MOSFET/IGBT drivers Description: IC: driver; H-bridge; high-side; SOIC8; 9A; Ch: 1; MOSFET; 1.38W Operating temperature: -40...125°C Output current: 9A Type of integrated circuit: driver Power dissipation: 1.38W Integrated circuit features: MOSFET Pulse fall time: 5ns Case: SOIC8 Kind of integrated circuit: high-side Number of channels: 1 Impulse rise time: 8.3ns Topology: H-bridge Mounting: SMD Maximum output current: 9A |
auf Bestellung 97500 Stücke: Lieferzeit 14-21 Tag (e) |
Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH | |
| 2ED21094S06JXUMA1 | INFINEON TECHNOLOGIES |
Category: MOSFET/IGBT drivers Description: IC: driver; IGBT half-bridge,MOSFET half-bridge; PG-DSO-14; Ch: 2 Output current: -0.7...0.29A Type of integrated circuit: driver Protection: undervoltage UVP Integrated circuit features: integrated bootstrap functionality Voltage class: 650V Kind of package: reel; tape Case: PG-DSO-14 Kind of integrated circuit: gate driver; high-/low-side Number of channels: 2 Topology: IGBT half-bridge; MOSFET half-bridge Mounting: SMD Supply voltage: 10...20V |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH | |
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TLE9250SJXUMA1 | INFINEON TECHNOLOGIES |
Category: CAN interfaces - integrated circuits Description: IC: CAN transceiver; 4.5÷5.5VDC; PG-DSO-8; -40÷150°C; No.of rec: 1 Mounting: SMD Operating temperature: -40...150°C Kind of package: reel; tape DC supply current: 60mA Number of transmitters: 1 Number of receivers: 1 Supply voltage: 4.5...5.5V DC Interface: CAN-FD Type of integrated circuit: CAN transceiver Case: PG-DSO-8 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| TZ800N16KOFHPSA3 | INFINEON TECHNOLOGIES |
Category: Thyristor modules Description: Module: thyristor; single thyristor; 1.6kV; 819A; BG-PB70AT-1 Max. off-state voltage: 1.6kV Load current: 819A Max. forward impulse current: 35kA Electrical mounting: FASTON connectors; screw Max. forward voltage: 1.51V Case: BG-PB70AT-1 Mechanical mounting: screw Gate current: 250mA Type of semiconductor module: thyristor Semiconductor structure: single thyristor |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
| TZ810N22KOFHPSA2 | INFINEON TECHNOLOGIES |
Category: Thyristor modules Description: Module: thyristor; single thyristor; 2.2kV; 819A; BG-PB70AT-1 Max. off-state voltage: 2.2kV Load current: 819A Max. forward impulse current: 39kA Electrical mounting: FASTON connectors; screw Max. forward voltage: 1.51V Case: BG-PB70AT-1 Mechanical mounting: screw Gate current: 250mA Type of semiconductor module: thyristor Semiconductor structure: single thyristor |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
| TZ800N18KOFHPSA3 | INFINEON TECHNOLOGIES |
Category: Thyristor modules Description: Module: thyristor; single thyristor; 1.8kV; 819A; BG-PB70AT-1 Max. off-state voltage: 1.8kV Load current: 819A Max. forward impulse current: 35kA Electrical mounting: FASTON connectors; screw Max. forward voltage: 1.51V Case: BG-PB70AT-1 Mechanical mounting: screw Gate current: 250mA Type of semiconductor module: thyristor Semiconductor structure: single thyristor |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
| BTS3018TCATMA1 | INFINEON TECHNOLOGIES |
Category: Power switches - integrated circuits Description: IC: power switch; low-side; 6A; Ch: 1; N-Channel; SMD; PG-TO263 Type of integrated circuit: power switch Kind of integrated circuit: low-side Output current: 6A Number of channels: 1 Kind of output: N-Channel Mounting: SMD Case: PG-TO263 On-state resistance: 18mΩ Kind of package: reel; tape Technology: HITFET® Operating temperature: -40...150°C Output voltage: 60V |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1000 Stücke Im Einkaufswagen Stück im Wert von UAH | |
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|
BSS215PH6327XTSA1 | INFINEON TECHNOLOGIES |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -1.5A; 0.5W; PG-SOT23 Mounting: SMD Drain current: -1.5A Kind of channel: enhancement Drain-source voltage: -20V Type of transistor: P-MOSFET Gate-source voltage: ±12V Case: PG-SOT23 On-state resistance: 0.15Ω Power dissipation: 0.5W Polarisation: unipolar Technology: OptiMOS™ P2 |
auf Bestellung 3005 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| TLD22522EPXUMA1 | INFINEON TECHNOLOGIES |
Category: LED drivers Description: IC: driver; high-side,LED driver; Litix™; PG-TSDSO-14; 60÷120mA Type of integrated circuit: driver Kind of integrated circuit: high-side; LED driver Technology: Litix™ Case: PG-TSDSO-14 Output current: 60...120mA Number of channels: 2 Integrated circuit features: linear dimming; PWM Mounting: SMD Operating voltage: 5.5...40V DC Protection: overheating OTP |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | |
 |
BSC0924NDIATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 40A; 2.5W; PG-TISON-8 Type of transistor: N-MOSFET Technology: OptiMOS™ Polarisation: unipolar Drain-source voltage: 30V Drain current: 40A Power dissipation: 2.5W Case: PG-TISON-8 Gate-source voltage: ±20V On-state resistance: 5mΩ Mounting: SMD Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 5000 Stücke Im Einkaufswagen Stück im Wert von UAH |
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IPB107N20N3GATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 200V; 88A; 300W; PG-TO263-3 Mounting: SMD Power dissipation: 300W Polarisation: unipolar Technology: OptiMOS™ 3 Drain current: 88A Kind of channel: enhancement Drain-source voltage: 200V Type of transistor: N-MOSFET Gate-source voltage: ±20V Case: PG-TO263-3 On-state resistance: 10.7mΩ |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| AIMW120R045M1XKSA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 36A; Idm: 130A; 114W Type of transistor: N-MOSFET Technology: CoolSiC™; SiC Polarisation: unipolar Drain-source voltage: 1.2kV Drain current: 36A Pulsed drain current: 130A Power dissipation: 114W Case: TO247 Gate-source voltage: -7...20V On-state resistance: 75mΩ Mounting: THT Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
 |
AIMW120R045M1XKSA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 36A; Idm: 130A; 114W Type of transistor: N-MOSFET Technology: CoolSiC™; SiC Polarisation: unipolar Drain-source voltage: 1.2kV Drain current: 36A Pulsed drain current: 130A Power dissipation: 114W Case: TO247 Gate-source voltage: -7...20V On-state resistance: 75mΩ Mounting: THT Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| CY7C1612KV18-250BZXC | INFINEON TECHNOLOGIES |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 144MbSRAM; 8Mx18bit; FBGA165; parallel; 0÷70°C Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 144Mb SRAM Memory organisation: 8Mx18bit Case: FBGA165 Kind of interface: parallel Mounting: SMD Operating temperature: 0...70°C Kind of package: in-tray Supply voltage: 1.7...1.9V DC Frequency: 250MHz |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 525 Stücke Im Einkaufswagen Stück im Wert von UAH | |
| CY7C1612KV18-300BZXI | INFINEON TECHNOLOGIES |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 144MbSRAM; 8Mx18bit; FBGA165; parallel; -40÷85°C Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 144Mb SRAM Memory organisation: 8Mx18bit Case: FBGA165 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Kind of package: in-tray Supply voltage: 1.7...1.9V DC Frequency: 300MHz |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 105 Stücke Im Einkaufswagen Stück im Wert von UAH | |
| CY7C1612KV18-360BZXC | INFINEON TECHNOLOGIES |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 144MbSRAM; 8Mx18bit; FBGA165; parallel; 0÷70°C Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 144Mb SRAM Memory organisation: 8Mx18bit Case: FBGA165 Kind of interface: parallel Mounting: SMD Operating temperature: 0...70°C Kind of package: in-tray Supply voltage: 1.7...1.9V DC Frequency: 360MHz |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 105 Stücke Im Einkaufswagen Stück im Wert von UAH | |
| CY7C1615KV18-250BZXC | INFINEON TECHNOLOGIES |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 144MbSRAM; 4Mx36bit; FBGA165; parallel; 0÷70°C Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 144Mb SRAM Memory organisation: 4Mx36bit Case: FBGA165 Kind of interface: parallel Mounting: SMD Operating temperature: 0...70°C Kind of package: in-tray Supply voltage: 1.7...1.9V DC Frequency: 250MHz |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 210 Stücke Im Einkaufswagen Stück im Wert von UAH | |
| CY7C1618KV18-333BZXC | INFINEON TECHNOLOGIES |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 144MbSRAM; 8Mx18bit; FBGA165; parallel; 0÷70°C Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 144Mb SRAM Memory organisation: 8Mx18bit Case: FBGA165 Kind of interface: parallel Mounting: SMD Operating temperature: 0...70°C Kind of package: in-tray Supply voltage: 1.7...1.9V DC Frequency: 333MHz |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 525 Stücke Im Einkaufswagen Stück im Wert von UAH | |
 |
IRFR48ZTRLPBF | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 55V; 91W; DPAK,TO252 Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 55V Power dissipation: 91W Case: DPAK; TO252 On-state resistance: 11mΩ Mounting: SMD Kind of channel: enhancement Gate charge: 40nC |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH |
  |
BTS500101TAEATMA1 | INFINEON TECHNOLOGIES |
Category: Power switches - integrated circuits Description: IC: power switch; high-side; 40A; Ch: 1; N-Channel; SMD Type of integrated circuit: power switch Kind of integrated circuit: high-side Output current: 40A Number of channels: 1 Kind of output: N-Channel Mounting: SMD Case: PG-TO263-7-10 On-state resistance: 1.6mΩ Supply voltage: 8...18V DC Technology: Power PROFET |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1000 Stücke Im Einkaufswagen Stück im Wert von UAH |
| CYBLE-222014-01 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: IoT (WiFi/Bluetooth) modules
Description: Module: Bluetooth Low Energy; Bluetooth: 4.2,BLE; 3dBm; SMD
Transmitter output power: 3dBm
Mounting: SMD
Supply voltage: 1.8...4.5V DC
Type of communications module: Bluetooth Low Energy
Dimensions: 10x10mm
Bluetooth version: 4.2; BLE
Receiver sensitivity: -91dBm
Interface: I2C; SPI; UART
Kind of module: wireless
Frequency: 2.4GHz
Category: IoT (WiFi/Bluetooth) modules
Description: Module: Bluetooth Low Energy; Bluetooth: 4.2,BLE; 3dBm; SMD
Transmitter output power: 3dBm
Mounting: SMD
Supply voltage: 1.8...4.5V DC
Type of communications module: Bluetooth Low Energy
Dimensions: 10x10mm
Bluetooth version: 4.2; BLE
Receiver sensitivity: -91dBm
Interface: I2C; SPI; UART
Kind of module: wireless
Frequency: 2.4GHz
Produkt ist nicht verfügbar
Mindestbestellmenge: 500 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| IPP026N10NF2SAKMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 184A; 250W; TO220-3
Mounting: THT
Gate charge: 103nC
Polarisation: unipolar
Drain current: 184A
Kind of channel: enhancement
Drain-source voltage: 100V
Type of transistor: N-MOSFET
Case: TO220-3
On-state resistance: 2.6mΩ
Power dissipation: 250W
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 184A; 250W; TO220-3
Mounting: THT
Gate charge: 103nC
Polarisation: unipolar
Drain current: 184A
Kind of channel: enhancement
Drain-source voltage: 100V
Type of transistor: N-MOSFET
Case: TO220-3
On-state resistance: 2.6mΩ
Power dissipation: 250W
auf Bestellung 92 Stücke:
Lieferzeit 14-21 Tag (e)
| BCR135SH6327 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 0.25W; SOT363; R1: 10kΩ
Type of transistor: NPN x2
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.25W
Case: SOT363
Mounting: SMD
Frequency: 150MHz
Base resistor: 10kΩ
Base-emitter resistor: 47kΩ
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 0.25W; SOT363; R1: 10kΩ
Type of transistor: NPN x2
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.25W
Case: SOT363
Mounting: SMD
Frequency: 150MHz
Base resistor: 10kΩ
Base-emitter resistor: 47kΩ
auf Bestellung 632 Stücke:
Lieferzeit 14-21 Tag (e)
| BCR35PNH6327 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V; 0.1A
Type of transistor: NPN / PNP
Polarisation: bipolar
Kind of transistor: BRT; complementary pair
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.25W
Case: SOT363
Mounting: SMD
Frequency: 150MHz
Base resistor: 10kΩ
Base-emitter resistor: 47kΩ
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V; 0.1A
Type of transistor: NPN / PNP
Polarisation: bipolar
Kind of transistor: BRT; complementary pair
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.25W
Case: SOT363
Mounting: SMD
Frequency: 150MHz
Base resistor: 10kΩ
Base-emitter resistor: 47kΩ
auf Bestellung 185 Stücke:
Lieferzeit 14-21 Tag (e)
| BCR135WH6327 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.25W; SOT323; R1: 10kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.25W
Case: SOT323
Mounting: SMD
Frequency: 150MHz
Base resistor: 10kΩ
Base-emitter resistor: 47kΩ
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.25W; SOT323; R1: 10kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.25W
Case: SOT323
Mounting: SMD
Frequency: 150MHz
Base resistor: 10kΩ
Base-emitter resistor: 47kΩ
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| BCR10PNH6327 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V; 0.1A
Type of transistor: NPN / PNP
Polarisation: bipolar
Kind of transistor: BRT; complementary pair
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.25W
Case: SOT363
Mounting: SMD
Frequency: 130MHz
Base resistor: 10kΩ
Base-emitter resistor: 10kΩ
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V; 0.1A
Type of transistor: NPN / PNP
Polarisation: bipolar
Kind of transistor: BRT; complementary pair
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.25W
Case: SOT363
Mounting: SMD
Frequency: 130MHz
Base resistor: 10kΩ
Base-emitter resistor: 10kΩ
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| BCR35PNH6433XTMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V; 0.1A
Type of transistor: NPN / PNP
Polarisation: bipolar
Kind of transistor: BRT; complementary pair
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.25W
Case: SOT363
Mounting: SMD
Frequency: 150MHz
Base resistor: 10kΩ
Base-emitter resistor: 47kΩ
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V; 0.1A
Type of transistor: NPN / PNP
Polarisation: bipolar
Kind of transistor: BRT; complementary pair
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.25W
Case: SOT363
Mounting: SMD
Frequency: 150MHz
Base resistor: 10kΩ
Base-emitter resistor: 47kΩ
Produkt ist nicht verfügbar
Mindestbestellmenge: 10000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| SN7002NH6433XTMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.16A; 0.36W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.16A
Power dissipation: 0.36W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 5Ω
Mounting: SMD
Kind of channel: enhancement
Technology: SIPMOS™
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.16A; 0.36W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.16A
Power dissipation: 0.36W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 5Ω
Mounting: SMD
Kind of channel: enhancement
Technology: SIPMOS™
auf Bestellung 4924 Stücke:
Lieferzeit 14-21 Tag (e)
| IRF2907ZSTRLPBF |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 170A; 330W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 170A
Power dissipation: 330W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 170A; 330W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 170A
Power dissipation: 330W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
Mindestbestellmenge: 800 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| CY7C65210A-24LTXIT |
|
Hersteller: INFINEON TECHNOLOGIES
Category: USB interfaces - integrated circuits
Description: IC: interface; GPIO x11,I2C; USB controller; Full Speed; QFN24
Interface: GPIO x11; I2C
Case: QFN24
Kind of package: reel; tape
Mounting: SMD
Operating temperature: -40...85°C
Number of ports: 1
Supply voltage: 1.71...5.5V DC
Data transfer rate: 12Mbps
USB speed: Full Speed
Kind of integrated circuit: USB controller
Type of integrated circuit: interface
Category: USB interfaces - integrated circuits
Description: IC: interface; GPIO x11,I2C; USB controller; Full Speed; QFN24
Interface: GPIO x11; I2C
Case: QFN24
Kind of package: reel; tape
Mounting: SMD
Operating temperature: -40...85°C
Number of ports: 1
Supply voltage: 1.71...5.5V DC
Data transfer rate: 12Mbps
USB speed: Full Speed
Kind of integrated circuit: USB controller
Type of integrated circuit: interface
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| CY7C65217A-24LTXIT |
|
Hersteller: INFINEON TECHNOLOGIES
Category: USB interfaces - integrated circuits
Description: IC: USB interface; GPIO x9,I2C,UART; USB controller; Full Speed
Type of integrated circuit: USB interface
Interface: GPIO x9; I2C; UART
Kind of integrated circuit: USB controller
USB speed: Full Speed
Data transfer rate: 12Mbps
Supply voltage: 1.71...5.5V DC
Kind of package: reel; tape
Case: QFN24
Mounting: SMD
Operating temperature: -40...85°C
Category: USB interfaces - integrated circuits
Description: IC: USB interface; GPIO x9,I2C,UART; USB controller; Full Speed
Type of integrated circuit: USB interface
Interface: GPIO x9; I2C; UART
Kind of integrated circuit: USB controller
USB speed: Full Speed
Data transfer rate: 12Mbps
Supply voltage: 1.71...5.5V DC
Kind of package: reel; tape
Case: QFN24
Mounting: SMD
Operating temperature: -40...85°C
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| CY7C65211A-24LTXIT |
|
Hersteller: INFINEON TECHNOLOGIES
Category: USB interfaces - integrated circuits
Description: IC: USB interface; GPIO x10,I2C,SPI,UART; USB controller; QFN24
Type of integrated circuit: USB interface
Interface: GPIO x10; I2C; SPI; UART
Kind of integrated circuit: USB controller
USB speed: Full Speed
Data transfer rate: 12Mbps
Supply voltage: 1.71...5.5V DC
Kind of package: reel; tape
Case: QFN24
Integrated circuit features: bridge
Mounting: SMD
Operating temperature: -40...85°C
Category: USB interfaces - integrated circuits
Description: IC: USB interface; GPIO x10,I2C,SPI,UART; USB controller; QFN24
Type of integrated circuit: USB interface
Interface: GPIO x10; I2C; SPI; UART
Kind of integrated circuit: USB controller
USB speed: Full Speed
Data transfer rate: 12Mbps
Supply voltage: 1.71...5.5V DC
Kind of package: reel; tape
Case: QFN24
Integrated circuit features: bridge
Mounting: SMD
Operating temperature: -40...85°C
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| CY7C65215A-32LTXIT |
|
Hersteller: INFINEON TECHNOLOGIES
Category: USB interfaces - integrated circuits
Description: IC: USB interface; GPIO x17,I2C,SPI,UART; USB controller; QFN32
Type of integrated circuit: USB interface
Interface: GPIO x17; I2C; SPI; UART
Kind of integrated circuit: USB controller
USB speed: Full Speed
Data transfer rate: 12Mbps
Supply voltage: 1.71...5.5V DC
Kind of package: reel; tape
Case: QFN32
Integrated circuit features: bridge
Mounting: SMD
Operating temperature: -40...85°C
Category: USB interfaces - integrated circuits
Description: IC: USB interface; GPIO x17,I2C,SPI,UART; USB controller; QFN32
Type of integrated circuit: USB interface
Interface: GPIO x17; I2C; SPI; UART
Kind of integrated circuit: USB controller
USB speed: Full Speed
Data transfer rate: 12Mbps
Supply voltage: 1.71...5.5V DC
Kind of package: reel; tape
Case: QFN32
Integrated circuit features: bridge
Mounting: SMD
Operating temperature: -40...85°C
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| 1EDC30I12MHXUMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,IGBT gate driver; -3÷3A
Mounting: SMD
Output current: -3...3A
Type of integrated circuit: driver
Integrated circuit features: active Miller clamp; galvanically isolated
Technology: EiceDRIVER™
Voltage class: 600/650/1200V
Kind of package: reel; tape
Case: PG-DSO-8
Kind of integrated circuit: high-side; IGBT gate driver
Number of channels: 1
Topology: single transistor
Supply voltage: 3.1...17V; 13...18V
Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,IGBT gate driver; -3÷3A
Mounting: SMD
Output current: -3...3A
Type of integrated circuit: driver
Integrated circuit features: active Miller clamp; galvanically isolated
Technology: EiceDRIVER™
Voltage class: 600/650/1200V
Kind of package: reel; tape
Case: PG-DSO-8
Kind of integrated circuit: high-side; IGBT gate driver
Number of channels: 1
Topology: single transistor
Supply voltage: 3.1...17V; 13...18V
auf Bestellung 950 Stücke:
Lieferzeit 14-21 Tag (e)
| 1EDC10I12MHXUMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,IGBT gate driver; -1÷1A
Mounting: SMD
Output current: -1...1A
Type of integrated circuit: driver
Integrated circuit features: active Miller clamp; galvanically isolated
Technology: EiceDRIVER™
Voltage class: 600/650/1200V
Kind of package: reel; tape
Case: PG-DSO-8
Kind of integrated circuit: high-side; IGBT gate driver
Number of channels: 1
Topology: single transistor
Supply voltage: 3.1...17V; 13...18V
Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,IGBT gate driver; -1÷1A
Mounting: SMD
Output current: -1...1A
Type of integrated circuit: driver
Integrated circuit features: active Miller clamp; galvanically isolated
Technology: EiceDRIVER™
Voltage class: 600/650/1200V
Kind of package: reel; tape
Case: PG-DSO-8
Kind of integrated circuit: high-side; IGBT gate driver
Number of channels: 1
Topology: single transistor
Supply voltage: 3.1...17V; 13...18V
auf Bestellung 22 Stücke:
Lieferzeit 14-21 Tag (e)
| IRL100HS121 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 7.8A; 5.8W; PQFN2X2
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 7.8A
Power dissipation: 5.8W
Case: PQFN2X2
Gate-source voltage: ±20V
On-state resistance: 42mΩ
Mounting: SMD
Gate charge: 3.7nC
Kind of package: reel
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 7.8A; 5.8W; PQFN2X2
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 7.8A
Power dissipation: 5.8W
Case: PQFN2X2
Gate-source voltage: ±20V
On-state resistance: 42mΩ
Mounting: SMD
Gate charge: 3.7nC
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IPA95R1K2P7XKSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 950V; 3.7A; 27W; TO220FP; ESD
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 950V
Drain current: 3.7A
Power dissipation: 27W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 1.2Ω
Mounting: THT
Gate charge: 15nC
Kind of package: tube
Kind of channel: enhancement
Version: ESD
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 950V; 3.7A; 27W; TO220FP; ESD
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 950V
Drain current: 3.7A
Power dissipation: 27W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 1.2Ω
Mounting: THT
Gate charge: 15nC
Kind of package: tube
Kind of channel: enhancement
Version: ESD
auf Bestellung 79 Stücke:
Lieferzeit 14-21 Tag (e)
| IDW10G65C5XKSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10A; PG-TO247-3; Ir: 2uA
Case: PG-TO247-3
Load current: 10A
Kind of package: tube
Semiconductor structure: single diode
Leakage current: 2µA
Type of diode: Schottky rectifying
Mounting: THT
Max. forward impulse current: 46A
Max. forward voltage: 1.8V
Power dissipation: 65W
Technology: CoolSiC™ 5G; SiC
Max. off-state voltage: 650V
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10A; PG-TO247-3; Ir: 2uA
Case: PG-TO247-3
Load current: 10A
Kind of package: tube
Semiconductor structure: single diode
Leakage current: 2µA
Type of diode: Schottky rectifying
Mounting: THT
Max. forward impulse current: 46A
Max. forward voltage: 1.8V
Power dissipation: 65W
Technology: CoolSiC™ 5G; SiC
Max. off-state voltage: 650V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| S29GL256S10FHI020 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 256MbFLASH; CFI,parallel; 100ns; BGA64; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 256Mb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Case: BGA64
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Access time: 100ns
Kind of package: in-tray
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 256MbFLASH; CFI,parallel; 100ns; BGA64; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 256Mb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Case: BGA64
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Access time: 100ns
Kind of package: in-tray
Produkt ist nicht verfügbar
Mindestbestellmenge: 900 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| BSC520N15NS3GATMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 21A; 57W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 21A
Power dissipation: 57W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 52mΩ
Mounting: SMD
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 21A; 57W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 21A
Power dissipation: 57W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 52mΩ
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
Mindestbestellmenge: 5000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| IFX007TAUMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: Motor and PWM drivers
Description: IC: driver; MOSFET half-bridge; IMC,motor controller; PG-TO263-7
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: IMC; motor controller
Technology: NovalithIC™
Case: PG-TO263-7
Output current: 9A
Number of channels: 1
Mounting: SMD
On-state resistance: 10mΩ
Operating temperature: -40...150°C
Application: DC motors
Operating voltage: 5.5...40V DC
Kind of package: reel; tape
Category: Motor and PWM drivers
Description: IC: driver; MOSFET half-bridge; IMC,motor controller; PG-TO263-7
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: IMC; motor controller
Technology: NovalithIC™
Case: PG-TO263-7
Output current: 9A
Number of channels: 1
Mounting: SMD
On-state resistance: 10mΩ
Operating temperature: -40...150°C
Application: DC motors
Operating voltage: 5.5...40V DC
Kind of package: reel; tape
auf Bestellung 974 Stücke:
Lieferzeit 14-21 Tag (e)
| S25HS02GTDPBHB053 |
Hersteller: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 2GbFLASH; QUAD SPI; 133MHz; 1.7÷2V; BGA24; serial
Operating temperature: -40...105°C
Type of integrated circuit: FLASH memory
Application: automotive
Memory: 2Gb FLASH
Operating frequency: 133MHz
Kind of interface: serial
Kind of package: reel; tape
Case: BGA24
Interface: QUAD SPI
Operating voltage: 1.7...2V
Kind of memory: NOR
Mounting: SMD
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 2GbFLASH; QUAD SPI; 133MHz; 1.7÷2V; BGA24; serial
Operating temperature: -40...105°C
Type of integrated circuit: FLASH memory
Application: automotive
Memory: 2Gb FLASH
Operating frequency: 133MHz
Kind of interface: serial
Kind of package: reel; tape
Case: BGA24
Interface: QUAD SPI
Operating voltage: 1.7...2V
Kind of memory: NOR
Mounting: SMD
Produkt ist nicht verfügbar
Mindestbestellmenge: 2000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| S25HS02GTDPBHV053 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 2GbFLASH; QUAD SPI; 133MHz; 1.7÷2V; BGA24; serial
Operating temperature: -40...105°C
Type of integrated circuit: FLASH memory
Memory: 2Gb FLASH
Operating frequency: 133MHz
Kind of interface: serial
Kind of package: reel; tape
Case: BGA24
Interface: QUAD SPI
Operating voltage: 1.7...2V
Kind of memory: NOR
Mounting: SMD
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 2GbFLASH; QUAD SPI; 133MHz; 1.7÷2V; BGA24; serial
Operating temperature: -40...105°C
Type of integrated circuit: FLASH memory
Memory: 2Gb FLASH
Operating frequency: 133MHz
Kind of interface: serial
Kind of package: reel; tape
Case: BGA24
Interface: QUAD SPI
Operating voltage: 1.7...2V
Kind of memory: NOR
Mounting: SMD
Produkt ist nicht verfügbar
Mindestbestellmenge: 2000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| S28HS02GTFPBHV050 |
Hersteller: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 2GbFLASH; octal; 166MHz; 1.7÷2V; BGA24; serial
Operating temperature: -40...105°C
Type of integrated circuit: FLASH memory
Memory: 2Gb FLASH
Operating frequency: 166MHz
Kind of interface: serial
Kind of package: in-tray
Case: BGA24
Interface: octal
Operating voltage: 1.7...2V
Kind of memory: NOR
Mounting: SMD
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 2GbFLASH; octal; 166MHz; 1.7÷2V; BGA24; serial
Operating temperature: -40...105°C
Type of integrated circuit: FLASH memory
Memory: 2Gb FLASH
Operating frequency: 166MHz
Kind of interface: serial
Kind of package: in-tray
Case: BGA24
Interface: octal
Operating voltage: 1.7...2V
Kind of memory: NOR
Mounting: SMD
Produkt ist nicht verfügbar
Mindestbestellmenge: 520 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| IPB107N20NAATMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 88A; 300W; PG-TO263-3
Mounting: SMD
Power dissipation: 300W
Polarisation: unipolar
Technology: OptiMOS™ 3
Drain current: 88A
Kind of channel: enhancement
Drain-source voltage: 200V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Case: PG-TO263-3
On-state resistance: 10.7mΩ
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 88A; 300W; PG-TO263-3
Mounting: SMD
Power dissipation: 300W
Polarisation: unipolar
Technology: OptiMOS™ 3
Drain current: 88A
Kind of channel: enhancement
Drain-source voltage: 200V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Case: PG-TO263-3
On-state resistance: 10.7mΩ
auf Bestellung 644 Stücke:
Lieferzeit 14-21 Tag (e)
| TLD2314ELXUMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: LED drivers
Description: IC: driver; high-side,LED driver; Litix™; PG-SSOP-14-EP; 120mA
Type of integrated circuit: driver
Kind of integrated circuit: high-side; LED driver
Technology: Litix™
Case: PG-SSOP-14-EP
Output current: 0.12A
Number of channels: 3
Integrated circuit features: linear dimming; PWM
Mounting: SMD
Operating voltage: 5.5...40V DC
Protection: overheating OTP
Category: LED drivers
Description: IC: driver; high-side,LED driver; Litix™; PG-SSOP-14-EP; 120mA
Type of integrated circuit: driver
Kind of integrated circuit: high-side; LED driver
Technology: Litix™
Case: PG-SSOP-14-EP
Output current: 0.12A
Number of channels: 3
Integrated circuit features: linear dimming; PWM
Mounting: SMD
Operating voltage: 5.5...40V DC
Protection: overheating OTP
auf Bestellung 2417 Stücke:
Lieferzeit 14-21 Tag (e)
| BAS3005S02LRHE6327XTSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD Schottky diodes
Description: Diode: Schottky switching
Type of diode: Schottky switching
Category: SMD Schottky diodes
Description: Diode: Schottky switching
Type of diode: Schottky switching
Produkt ist nicht verfügbar
Mindestbestellmenge: 15000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| IKCM30F60GAXKMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: Motor and PWM drivers
Description: IC: driver; IGBT three-phase bridge,thermistor; PG-MDIP24; 20kHz
Type of integrated circuit: driver
Topology: IGBT three-phase bridge; thermistor
Kind of integrated circuit: 3-phase motor controller; IPM
Technology: ClPOS™ Mini; TRENCHSTOP™
Case: PG-MDIP24
Output current: -20...20A
Integrated circuit features: integrated bootstrap functionality
Mounting: THT
Operating temperature: -40...125°C
Operating voltage: 13.5...18.5/0...400V DC
Frequency: 20kHz
Voltage class: 600V
Protection: anti-overload OPP; undervoltage UVP
Power dissipation: 30.3W
Category: Motor and PWM drivers
Description: IC: driver; IGBT three-phase bridge,thermistor; PG-MDIP24; 20kHz
Type of integrated circuit: driver
Topology: IGBT three-phase bridge; thermistor
Kind of integrated circuit: 3-phase motor controller; IPM
Technology: ClPOS™ Mini; TRENCHSTOP™
Case: PG-MDIP24
Output current: -20...20A
Integrated circuit features: integrated bootstrap functionality
Mounting: THT
Operating temperature: -40...125°C
Operating voltage: 13.5...18.5/0...400V DC
Frequency: 20kHz
Voltage class: 600V
Protection: anti-overload OPP; undervoltage UVP
Power dissipation: 30.3W
auf Bestellung 28 Stücke:
Lieferzeit 14-21 Tag (e)
| IGCM20F60GAXKMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: Motor and PWM drivers
Description: IC: driver; IGBT three-phase bridge,thermistor; -20÷20A; 20kHz
Type of integrated circuit: driver
Topology: IGBT three-phase bridge; thermistor
Kind of integrated circuit: 3-phase motor controller; IPM
Case: DIP 36x21 (PG-DIP-24)
Output current: -20...20A
Integrated circuit features: integrated bootstrap functionality
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Frequency: 20kHz
Operating voltage: 13.5...18.5/0...400V DC
Protection: anti-overload OPP; undervoltage UVP
Technology: ClPOS™ Mini; TRENCHSTOP™
Voltage class: 600V
Category: Motor and PWM drivers
Description: IC: driver; IGBT three-phase bridge,thermistor; -20÷20A; 20kHz
Type of integrated circuit: driver
Topology: IGBT three-phase bridge; thermistor
Kind of integrated circuit: 3-phase motor controller; IPM
Case: DIP 36x21 (PG-DIP-24)
Output current: -20...20A
Integrated circuit features: integrated bootstrap functionality
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Frequency: 20kHz
Operating voltage: 13.5...18.5/0...400V DC
Protection: anti-overload OPP; undervoltage UVP
Technology: ClPOS™ Mini; TRENCHSTOP™
Voltage class: 600V
auf Bestellung 9 Stücke:
Lieferzeit 14-21 Tag (e)
| IKCM10L60GAXKMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: Motor and PWM drivers
Description: IC: driver; IGBT three-phase bridge,thermistor; PG-MDIP24; 20kHz
Type of integrated circuit: driver
Topology: IGBT three-phase bridge; thermistor
Kind of integrated circuit: 3-phase motor controller; IPM
Technology: ClPOS™ Mini; TRENCHSTOP™
Case: PG-MDIP24
Output current: -10...10A
Integrated circuit features: integrated bootstrap functionality
Mounting: THT
Operating temperature: -40...125°C
Operating voltage: 13.5...18.5/0...400V DC
Frequency: 20kHz
Voltage class: 600V
Power dissipation: 25.2W
Category: Motor and PWM drivers
Description: IC: driver; IGBT three-phase bridge,thermistor; PG-MDIP24; 20kHz
Type of integrated circuit: driver
Topology: IGBT three-phase bridge; thermistor
Kind of integrated circuit: 3-phase motor controller; IPM
Technology: ClPOS™ Mini; TRENCHSTOP™
Case: PG-MDIP24
Output current: -10...10A
Integrated circuit features: integrated bootstrap functionality
Mounting: THT
Operating temperature: -40...125°C
Operating voltage: 13.5...18.5/0...400V DC
Frequency: 20kHz
Voltage class: 600V
Power dissipation: 25.2W
auf Bestellung 280 Stücke:
Lieferzeit 14-21 Tag (e)
| IDD03SG60CXTMA2 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying
Type of diode: Schottky rectifying
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying
Type of diode: Schottky rectifying
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| IDD03SG60C |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; PG-TO252-3; SiC; SMD; 600V; 3A; 38W
Type of diode: Schottky rectifying
Kind of package: reel; tape
Semiconductor structure: single diode
Mounting: SMD
Leakage current: 0.23µA
Max. forward voltage: 2.1V
Load current: 3A
Max. forward impulse current: 9.7A
Power dissipation: 38W
Technology: CoolSiC™ 3G; SiC
Max. off-state voltage: 0.6kV
Case: PG-TO252-3
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; PG-TO252-3; SiC; SMD; 600V; 3A; 38W
Type of diode: Schottky rectifying
Kind of package: reel; tape
Semiconductor structure: single diode
Mounting: SMD
Leakage current: 0.23µA
Max. forward voltage: 2.1V
Load current: 3A
Max. forward impulse current: 9.7A
Power dissipation: 38W
Technology: CoolSiC™ 3G; SiC
Max. off-state voltage: 0.6kV
Case: PG-TO252-3
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| PVI1050NPBFHKLA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: Optocouplers - analog output
Description: Optocoupler
Type of optocoupler: optocoupler
Category: Optocouplers - analog output
Description: Optocoupler
Type of optocoupler: optocoupler
auf Bestellung 1300 Stücke:
Lieferzeit 14-21 Tag (e)
| IPG20N10S4L35ATMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; OptiMOS™ T2; unipolar; 100V; 17A; Idm: 80A
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 17A
Pulsed drain current: 80A
Power dissipation: 43W
Case: PG-TDSON-8-4
Gate-source voltage: ±16V
On-state resistance: 35mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ T2
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; OptiMOS™ T2; unipolar; 100V; 17A; Idm: 80A
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 17A
Pulsed drain current: 80A
Power dissipation: 43W
Case: PG-TDSON-8-4
Gate-source voltage: ±16V
On-state resistance: 35mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ T2
Produkt ist nicht verfügbar
Mindestbestellmenge: 5000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| IPB020N10N5LF |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 120A; 313W; PG-TO263-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 120A
Power dissipation: 313W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 2mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 5
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 120A; 313W; PG-TO263-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 120A
Power dissipation: 313W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 2mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 5
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| IPT020N10N3ATMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 212A; Idm: 1200A; 375W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 212A
Pulsed drain current: 1.2kA
Power dissipation: 375W
Case: PG-HSOF-8
Gate-source voltage: ±20V
On-state resistance: 2mΩ
Mounting: SMD
Gate charge: 156nC
Kind of package: tape
Kind of channel: enhancement
Technology: OptiMOS™ 3
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 212A; Idm: 1200A; 375W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 212A
Pulsed drain current: 1.2kA
Power dissipation: 375W
Case: PG-HSOF-8
Gate-source voltage: ±20V
On-state resistance: 2mΩ
Mounting: SMD
Gate charge: 156nC
Kind of package: tape
Kind of channel: enhancement
Technology: OptiMOS™ 3
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IPB020N10N5ATMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 120A; 375W; PG-TO263-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 120A
Power dissipation: 375W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 2mΩ
Mounting: SMD
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 120A; 375W; PG-TO263-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 120A
Power dissipation: 375W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 2mΩ
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| DD1600S33HE4BPSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: Diode modules
Description: Module: diode
Type of semiconductor module: diode
Category: Diode modules
Description: Module: diode
Type of semiconductor module: diode
Produkt ist nicht verfügbar
Mindestbestellmenge: 2 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| IMW65R027M1HXKSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 39A; Idm: 185A; 189W
Type of transistor: N-MOSFET
Technology: CoolSiC™; SiC
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 39A
Pulsed drain current: 185A
Power dissipation: 189W
Case: TO247
Gate-source voltage: -5...23V
On-state resistance: 35mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 39A; Idm: 185A; 189W
Type of transistor: N-MOSFET
Technology: CoolSiC™; SiC
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 39A
Pulsed drain current: 185A
Power dissipation: 189W
Case: TO247
Gate-source voltage: -5...23V
On-state resistance: 35mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IMZA65R027M1HXKSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 41A; Idm: 184A; 189W
Mounting: THT
Technology: CoolSiC™; SiC
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Type of transistor: N-MOSFET
Kind of package: tube
Polarisation: unipolar
Gate-source voltage: -5...23V
On-state resistance: 35mΩ
Drain current: 41A
Pulsed drain current: 184A
Power dissipation: 189W
Drain-source voltage: 650V
Case: TO247-4
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 41A; Idm: 184A; 189W
Mounting: THT
Technology: CoolSiC™; SiC
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Type of transistor: N-MOSFET
Kind of package: tube
Polarisation: unipolar
Gate-source voltage: -5...23V
On-state resistance: 35mΩ
Drain current: 41A
Pulsed drain current: 184A
Power dissipation: 189W
Drain-source voltage: 650V
Case: TO247-4
Produkt ist nicht verfügbar
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| 1EDB6275FXUMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; H-bridge; high-side; SOIC8; 9A; Ch: 1; MOSFET; 1.38W
Operating temperature: -40...125°C
Output current: 9A
Type of integrated circuit: driver
Power dissipation: 1.38W
Integrated circuit features: MOSFET
Pulse fall time: 5ns
Case: SOIC8
Kind of integrated circuit: high-side
Number of channels: 1
Impulse rise time: 8.3ns
Topology: H-bridge
Mounting: SMD
Maximum output current: 9A
Category: MOSFET/IGBT drivers
Description: IC: driver; H-bridge; high-side; SOIC8; 9A; Ch: 1; MOSFET; 1.38W
Operating temperature: -40...125°C
Output current: 9A
Type of integrated circuit: driver
Power dissipation: 1.38W
Integrated circuit features: MOSFET
Pulse fall time: 5ns
Case: SOIC8
Kind of integrated circuit: high-side
Number of channels: 1
Impulse rise time: 8.3ns
Topology: H-bridge
Mounting: SMD
Maximum output current: 9A
auf Bestellung 97500 Stücke:
Lieferzeit 14-21 Tag (e)
| 2ED21094S06JXUMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT half-bridge,MOSFET half-bridge; PG-DSO-14; Ch: 2
Output current: -0.7...0.29A
Type of integrated circuit: driver
Protection: undervoltage UVP
Integrated circuit features: integrated bootstrap functionality
Voltage class: 650V
Kind of package: reel; tape
Case: PG-DSO-14
Kind of integrated circuit: gate driver; high-/low-side
Number of channels: 2
Topology: IGBT half-bridge; MOSFET half-bridge
Mounting: SMD
Supply voltage: 10...20V
Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT half-bridge,MOSFET half-bridge; PG-DSO-14; Ch: 2
Output current: -0.7...0.29A
Type of integrated circuit: driver
Protection: undervoltage UVP
Integrated circuit features: integrated bootstrap functionality
Voltage class: 650V
Kind of package: reel; tape
Case: PG-DSO-14
Kind of integrated circuit: gate driver; high-/low-side
Number of channels: 2
Topology: IGBT half-bridge; MOSFET half-bridge
Mounting: SMD
Supply voltage: 10...20V
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
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| TLE9250SJXUMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: CAN interfaces - integrated circuits
Description: IC: CAN transceiver; 4.5÷5.5VDC; PG-DSO-8; -40÷150°C; No.of rec: 1
Mounting: SMD
Operating temperature: -40...150°C
Kind of package: reel; tape
DC supply current: 60mA
Number of transmitters: 1
Number of receivers: 1
Supply voltage: 4.5...5.5V DC
Interface: CAN-FD
Type of integrated circuit: CAN transceiver
Case: PG-DSO-8
Category: CAN interfaces - integrated circuits
Description: IC: CAN transceiver; 4.5÷5.5VDC; PG-DSO-8; -40÷150°C; No.of rec: 1
Mounting: SMD
Operating temperature: -40...150°C
Kind of package: reel; tape
DC supply current: 60mA
Number of transmitters: 1
Number of receivers: 1
Supply voltage: 4.5...5.5V DC
Interface: CAN-FD
Type of integrated circuit: CAN transceiver
Case: PG-DSO-8
Produkt ist nicht verfügbar
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| TZ800N16KOFHPSA3 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: Thyristor modules
Description: Module: thyristor; single thyristor; 1.6kV; 819A; BG-PB70AT-1
Max. off-state voltage: 1.6kV
Load current: 819A
Max. forward impulse current: 35kA
Electrical mounting: FASTON connectors; screw
Max. forward voltage: 1.51V
Case: BG-PB70AT-1
Mechanical mounting: screw
Gate current: 250mA
Type of semiconductor module: thyristor
Semiconductor structure: single thyristor
Category: Thyristor modules
Description: Module: thyristor; single thyristor; 1.6kV; 819A; BG-PB70AT-1
Max. off-state voltage: 1.6kV
Load current: 819A
Max. forward impulse current: 35kA
Electrical mounting: FASTON connectors; screw
Max. forward voltage: 1.51V
Case: BG-PB70AT-1
Mechanical mounting: screw
Gate current: 250mA
Type of semiconductor module: thyristor
Semiconductor structure: single thyristor
Produkt ist nicht verfügbar
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| TZ810N22KOFHPSA2 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: Thyristor modules
Description: Module: thyristor; single thyristor; 2.2kV; 819A; BG-PB70AT-1
Max. off-state voltage: 2.2kV
Load current: 819A
Max. forward impulse current: 39kA
Electrical mounting: FASTON connectors; screw
Max. forward voltage: 1.51V
Case: BG-PB70AT-1
Mechanical mounting: screw
Gate current: 250mA
Type of semiconductor module: thyristor
Semiconductor structure: single thyristor
Category: Thyristor modules
Description: Module: thyristor; single thyristor; 2.2kV; 819A; BG-PB70AT-1
Max. off-state voltage: 2.2kV
Load current: 819A
Max. forward impulse current: 39kA
Electrical mounting: FASTON connectors; screw
Max. forward voltage: 1.51V
Case: BG-PB70AT-1
Mechanical mounting: screw
Gate current: 250mA
Type of semiconductor module: thyristor
Semiconductor structure: single thyristor
Produkt ist nicht verfügbar
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| TZ800N18KOFHPSA3 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: Thyristor modules
Description: Module: thyristor; single thyristor; 1.8kV; 819A; BG-PB70AT-1
Max. off-state voltage: 1.8kV
Load current: 819A
Max. forward impulse current: 35kA
Electrical mounting: FASTON connectors; screw
Max. forward voltage: 1.51V
Case: BG-PB70AT-1
Mechanical mounting: screw
Gate current: 250mA
Type of semiconductor module: thyristor
Semiconductor structure: single thyristor
Category: Thyristor modules
Description: Module: thyristor; single thyristor; 1.8kV; 819A; BG-PB70AT-1
Max. off-state voltage: 1.8kV
Load current: 819A
Max. forward impulse current: 35kA
Electrical mounting: FASTON connectors; screw
Max. forward voltage: 1.51V
Case: BG-PB70AT-1
Mechanical mounting: screw
Gate current: 250mA
Type of semiconductor module: thyristor
Semiconductor structure: single thyristor
Produkt ist nicht verfügbar
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Stück im Wert von UAH
| BTS3018TCATMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 6A; Ch: 1; N-Channel; SMD; PG-TO263
Type of integrated circuit: power switch
Kind of integrated circuit: low-side
Output current: 6A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: PG-TO263
On-state resistance: 18mΩ
Kind of package: reel; tape
Technology: HITFET®
Operating temperature: -40...150°C
Output voltage: 60V
Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 6A; Ch: 1; N-Channel; SMD; PG-TO263
Type of integrated circuit: power switch
Kind of integrated circuit: low-side
Output current: 6A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: PG-TO263
On-state resistance: 18mΩ
Kind of package: reel; tape
Technology: HITFET®
Operating temperature: -40...150°C
Output voltage: 60V
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
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Stück im Wert von UAH
| BSS215PH6327XTSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -1.5A; 0.5W; PG-SOT23
Mounting: SMD
Drain current: -1.5A
Kind of channel: enhancement
Drain-source voltage: -20V
Type of transistor: P-MOSFET
Gate-source voltage: ±12V
Case: PG-SOT23
On-state resistance: 0.15Ω
Power dissipation: 0.5W
Polarisation: unipolar
Technology: OptiMOS™ P2
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -1.5A; 0.5W; PG-SOT23
Mounting: SMD
Drain current: -1.5A
Kind of channel: enhancement
Drain-source voltage: -20V
Type of transistor: P-MOSFET
Gate-source voltage: ±12V
Case: PG-SOT23
On-state resistance: 0.15Ω
Power dissipation: 0.5W
Polarisation: unipolar
Technology: OptiMOS™ P2
auf Bestellung 3005 Stücke:
Lieferzeit 14-21 Tag (e)
| TLD22522EPXUMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: LED drivers
Description: IC: driver; high-side,LED driver; Litix™; PG-TSDSO-14; 60÷120mA
Type of integrated circuit: driver
Kind of integrated circuit: high-side; LED driver
Technology: Litix™
Case: PG-TSDSO-14
Output current: 60...120mA
Number of channels: 2
Integrated circuit features: linear dimming; PWM
Mounting: SMD
Operating voltage: 5.5...40V DC
Protection: overheating OTP
Category: LED drivers
Description: IC: driver; high-side,LED driver; Litix™; PG-TSDSO-14; 60÷120mA
Type of integrated circuit: driver
Kind of integrated circuit: high-side; LED driver
Technology: Litix™
Case: PG-TSDSO-14
Output current: 60...120mA
Number of channels: 2
Integrated circuit features: linear dimming; PWM
Mounting: SMD
Operating voltage: 5.5...40V DC
Protection: overheating OTP
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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Stück im Wert von UAH
| BSC0924NDIATMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 40A; 2.5W; PG-TISON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 40A
Power dissipation: 2.5W
Case: PG-TISON-8
Gate-source voltage: ±20V
On-state resistance: 5mΩ
Mounting: SMD
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 40A; 2.5W; PG-TISON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 40A
Power dissipation: 2.5W
Case: PG-TISON-8
Gate-source voltage: ±20V
On-state resistance: 5mΩ
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
Mindestbestellmenge: 5000 Stücke
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Stück im Wert von UAH
| IPB107N20N3GATMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 88A; 300W; PG-TO263-3
Mounting: SMD
Power dissipation: 300W
Polarisation: unipolar
Technology: OptiMOS™ 3
Drain current: 88A
Kind of channel: enhancement
Drain-source voltage: 200V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Case: PG-TO263-3
On-state resistance: 10.7mΩ
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 88A; 300W; PG-TO263-3
Mounting: SMD
Power dissipation: 300W
Polarisation: unipolar
Technology: OptiMOS™ 3
Drain current: 88A
Kind of channel: enhancement
Drain-source voltage: 200V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Case: PG-TO263-3
On-state resistance: 10.7mΩ
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| AIMW120R045M1XKSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 36A; Idm: 130A; 114W
Type of transistor: N-MOSFET
Technology: CoolSiC™; SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 36A
Pulsed drain current: 130A
Power dissipation: 114W
Case: TO247
Gate-source voltage: -7...20V
On-state resistance: 75mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 36A; Idm: 130A; 114W
Type of transistor: N-MOSFET
Technology: CoolSiC™; SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 36A
Pulsed drain current: 130A
Power dissipation: 114W
Case: TO247
Gate-source voltage: -7...20V
On-state resistance: 75mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| AIMW120R045M1XKSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 36A; Idm: 130A; 114W
Type of transistor: N-MOSFET
Technology: CoolSiC™; SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 36A
Pulsed drain current: 130A
Power dissipation: 114W
Case: TO247
Gate-source voltage: -7...20V
On-state resistance: 75mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 36A; Idm: 130A; 114W
Type of transistor: N-MOSFET
Technology: CoolSiC™; SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 36A
Pulsed drain current: 130A
Power dissipation: 114W
Case: TO247
Gate-source voltage: -7...20V
On-state resistance: 75mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| CY7C1612KV18-250BZXC |
|
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 144MbSRAM; 8Mx18bit; FBGA165; parallel; 0÷70°C
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 144Mb SRAM
Memory organisation: 8Mx18bit
Case: FBGA165
Kind of interface: parallel
Mounting: SMD
Operating temperature: 0...70°C
Kind of package: in-tray
Supply voltage: 1.7...1.9V DC
Frequency: 250MHz
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 144MbSRAM; 8Mx18bit; FBGA165; parallel; 0÷70°C
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 144Mb SRAM
Memory organisation: 8Mx18bit
Case: FBGA165
Kind of interface: parallel
Mounting: SMD
Operating temperature: 0...70°C
Kind of package: in-tray
Supply voltage: 1.7...1.9V DC
Frequency: 250MHz
Produkt ist nicht verfügbar
Mindestbestellmenge: 525 Stücke
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| CY7C1612KV18-300BZXI |
|
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 144MbSRAM; 8Mx18bit; FBGA165; parallel; -40÷85°C
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 144Mb SRAM
Memory organisation: 8Mx18bit
Case: FBGA165
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Supply voltage: 1.7...1.9V DC
Frequency: 300MHz
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 144MbSRAM; 8Mx18bit; FBGA165; parallel; -40÷85°C
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 144Mb SRAM
Memory organisation: 8Mx18bit
Case: FBGA165
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Supply voltage: 1.7...1.9V DC
Frequency: 300MHz
Produkt ist nicht verfügbar
Mindestbestellmenge: 105 Stücke
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Stück im Wert von UAH
| CY7C1612KV18-360BZXC |
|
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 144MbSRAM; 8Mx18bit; FBGA165; parallel; 0÷70°C
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 144Mb SRAM
Memory organisation: 8Mx18bit
Case: FBGA165
Kind of interface: parallel
Mounting: SMD
Operating temperature: 0...70°C
Kind of package: in-tray
Supply voltage: 1.7...1.9V DC
Frequency: 360MHz
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 144MbSRAM; 8Mx18bit; FBGA165; parallel; 0÷70°C
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 144Mb SRAM
Memory organisation: 8Mx18bit
Case: FBGA165
Kind of interface: parallel
Mounting: SMD
Operating temperature: 0...70°C
Kind of package: in-tray
Supply voltage: 1.7...1.9V DC
Frequency: 360MHz
Produkt ist nicht verfügbar
Mindestbestellmenge: 105 Stücke
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Stück im Wert von UAH
| CY7C1615KV18-250BZXC |
|
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 144MbSRAM; 4Mx36bit; FBGA165; parallel; 0÷70°C
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 144Mb SRAM
Memory organisation: 4Mx36bit
Case: FBGA165
Kind of interface: parallel
Mounting: SMD
Operating temperature: 0...70°C
Kind of package: in-tray
Supply voltage: 1.7...1.9V DC
Frequency: 250MHz
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 144MbSRAM; 4Mx36bit; FBGA165; parallel; 0÷70°C
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 144Mb SRAM
Memory organisation: 4Mx36bit
Case: FBGA165
Kind of interface: parallel
Mounting: SMD
Operating temperature: 0...70°C
Kind of package: in-tray
Supply voltage: 1.7...1.9V DC
Frequency: 250MHz
Produkt ist nicht verfügbar
Mindestbestellmenge: 210 Stücke
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Stück im Wert von UAH
| CY7C1618KV18-333BZXC |
|
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 144MbSRAM; 8Mx18bit; FBGA165; parallel; 0÷70°C
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 144Mb SRAM
Memory organisation: 8Mx18bit
Case: FBGA165
Kind of interface: parallel
Mounting: SMD
Operating temperature: 0...70°C
Kind of package: in-tray
Supply voltage: 1.7...1.9V DC
Frequency: 333MHz
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 144MbSRAM; 8Mx18bit; FBGA165; parallel; 0÷70°C
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 144Mb SRAM
Memory organisation: 8Mx18bit
Case: FBGA165
Kind of interface: parallel
Mounting: SMD
Operating temperature: 0...70°C
Kind of package: in-tray
Supply voltage: 1.7...1.9V DC
Frequency: 333MHz
Produkt ist nicht verfügbar
Mindestbestellmenge: 525 Stücke
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Stück im Wert von UAH
| IRFR48ZTRLPBF |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 91W; DPAK,TO252
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Power dissipation: 91W
Case: DPAK; TO252
On-state resistance: 11mΩ
Mounting: SMD
Kind of channel: enhancement
Gate charge: 40nC
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 91W; DPAK,TO252
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Power dissipation: 91W
Case: DPAK; TO252
On-state resistance: 11mΩ
Mounting: SMD
Kind of channel: enhancement
Gate charge: 40nC
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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Stück im Wert von UAH
| BTS500101TAEATMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 40A; Ch: 1; N-Channel; SMD
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 40A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: PG-TO263-7-10
On-state resistance: 1.6mΩ
Supply voltage: 8...18V DC
Technology: Power PROFET
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 40A; Ch: 1; N-Channel; SMD
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 40A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: PG-TO263-7-10
On-state resistance: 1.6mΩ
Supply voltage: 8...18V DC
Technology: Power PROFET
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
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Stück im Wert von UAH