Produkte > INFINEON TECHNOLOGIES > Alle Produkte des Herstellers INFINEON TECHNOLOGIES (128279) > Seite 2098 nach 2138
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
| ISA250250N04LMDSXTMA1 | INFINEON TECHNOLOGIES |
 Category: Multi channel transistorsDescription: Transistor: N-MOSFET x2; unipolar Type of transistor: N-MOSFET x2 Polarisation: unipolar Mounting: SMD |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 4000 Stücke Im Einkaufswagen Stück im Wert von UAH | |
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TLE42994EXUMA1 | INFINEON TECHNOLOGIES |
Category: LDO fixed voltage regulators Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.15A; SMD; Ch: 1 Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Output voltage: 3.3V Output current: 0.15A Case: PG-SSOP-14-EP Mounting: SMD Kind of package: reel; tape Operating temperature: -40...150°C Number of channels: 1 Input voltage: 4.4...45V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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TLE4299GMV33XUMA2 | INFINEON TECHNOLOGIES |
Category: LDO fixed voltage regulators Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.15A; PG-DSO-14 Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Output voltage: 3.3V Output current: 0.15A Case: PG-DSO-14 Mounting: SMD Kind of package: reel; tape Operating temperature: -40...150°C Tolerance: ±2% Number of channels: 1 Input voltage: 4.4...45V DC |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH |
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CY8C24123A-24SXI | INFINEON TECHNOLOGIES |
Category: Infineon Technologies microcontrollers Description: IC: PSoC microcontroller; 24MHz; SO8; 256BSRAM,4kBFLASH Interface: GPIO; I2C; SPI; UART Clock frequency: 24MHz Integrated circuit features: watchdog Kind of core: 8-bit Memory: 256B SRAM; 4kB FLASH Case: SO8 Mounting: SMD Supply voltage: 3...5.25V DC Number of inputs/outputs: 6 Type of integrated circuit: PSoC microcontroller Operating temperature: -40...85°C |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2425 Stücke Im Einkaufswagen Stück im Wert von UAH |
| CY8C24123A-24SXIT | INFINEON TECHNOLOGIES |
Category: Infineon Technologies microcontrollers Description: IC: microcontroller Type of integrated circuit: microcontroller |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH | |
| IPD35N10S3L26ATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; OptiMOS® -T; unipolar; 100V; 25A; Idm: 140A Type of transistor: N-MOSFET Technology: OptiMOS® -T Polarisation: unipolar Drain-source voltage: 100V Drain current: 25A Pulsed drain current: 140A Power dissipation: 71W Case: PG-TO252-3-11 Gate-source voltage: ±20V On-state resistance: 24mΩ Mounting: SMD Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH | |
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BSC052N08NS5ATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 95A; 83W; PG-TDSON-8 Type of transistor: N-MOSFET Technology: OptiMOS™ 5 Polarisation: unipolar Drain-source voltage: 80V Drain current: 95A Power dissipation: 83W Case: PG-TDSON-8 Gate-source voltage: ±20V On-state resistance: 5.2mΩ Mounting: SMD Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 5000 Stücke Im Einkaufswagen Stück im Wert von UAH |
| BSC027N10NS5ATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 100A; 214W; TSON8 Type of transistor: N-MOSFET On-state resistance: 2.7mΩ Mounting: SMD Power dissipation: 214W Gate charge: 111nC Polarisation: unipolar Drain current: 100A Kind of channel: enhancement Drain-source voltage: 100V Case: TSON8 |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 5000 Stücke Im Einkaufswagen Stück im Wert von UAH | |
| BSL202SNH6327XTSA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 7.5A; 2W; TSOP6 Power dissipation: 2W Gate charge: 8.7nC Polarisation: unipolar Drain current: 7.5A Kind of channel: enhancement Drain-source voltage: 20V Application: automotive industry Type of transistor: N-MOSFET Case: TSOP6 On-state resistance: 17mΩ Mounting: SMD |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | |
| CY7C1020DV33-10ZSXIT | INFINEON TECHNOLOGIES |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 512kbSRAM; 32kx16bit; 10ns; TSOP44 II; parallel Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 512kb SRAM Memory organisation: 32kx16bit Access time: 10ns Case: TSOP44 II Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Kind of package: reel; tape Supply voltage: 3...3.6V DC |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1000 Stücke Im Einkaufswagen Stück im Wert von UAH | |
| CY7C1020D-10ZSXI | INFINEON TECHNOLOGIES |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 512kbSRAM; 32kx16bit; 10ns; TSOP44 II; parallel Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 512kb SRAM Memory organisation: 32kx16bit Access time: 10ns Case: TSOP44 II Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Kind of package: in-tray Supply voltage: 4.5...5.5V DC |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 675 Stücke Im Einkaufswagen Stück im Wert von UAH | |
| CY7C1020DV33-10ZSXI | INFINEON TECHNOLOGIES |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 512kbSRAM; 32kx16bit; 10ns; TSOP44 II; parallel Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 512kb SRAM Memory organisation: 32kx16bit Access time: 10ns Case: TSOP44 II Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Kind of package: in-tray Supply voltage: 3...3.6V DC |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 135 Stücke Im Einkaufswagen Stück im Wert von UAH | |
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IPP034N08N5AKSA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 120A; 167W; PG-TO220-3 Type of transistor: N-MOSFET Technology: OptiMOS™ 5 Polarisation: unipolar Drain-source voltage: 80V Drain current: 120A Power dissipation: 167W Case: PG-TO220-3 Gate-source voltage: ±20V On-state resistance: 3.4mΩ Mounting: THT Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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BTS3080TF | INFINEON TECHNOLOGIES |
Category: Power switches - integrated circuits Description: IC: power switch; low-side; 3A; Ch: 1; N-Channel; SMD; PG-TO252-3 Type of integrated circuit: power switch Kind of integrated circuit: low-side Output current: 3A Number of channels: 1 Kind of output: N-Channel Mounting: SMD Case: PG-TO252-3 On-state resistance: 0.16Ω Technology: HITFET® Operating temperature: -40...150°C Output voltage: 40V Turn-on time: 115µs Turn-off time: 210µs |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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BTS3050TF | INFINEON TECHNOLOGIES |
Category: Power switches - integrated circuits Description: IC: power switch; low-side; 4A; Ch: 1; N-Channel; SMD; PG-TO252-3 Mounting: SMD Output current: 4A Type of integrated circuit: power switch Kind of output: N-Channel Operating temperature: -40...150°C Technology: HITFET® Turn-on time: 115µs Output voltage: 40V Case: PG-TO252-3 Turn-off time: 210µs Kind of integrated circuit: low-side Number of channels: 1 On-state resistance: 0.1Ω |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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IPI50R350CPXKSA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 10A; 89W; PG-TO262-3 Type of transistor: N-MOSFET Technology: CoolMOS™ Polarisation: unipolar Drain-source voltage: 500V Drain current: 10A Power dissipation: 89W Case: PG-TO262-3 Gate-source voltage: ±20V On-state resistance: 0.35Ω Mounting: THT Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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IPP048N12N3GXKSA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 120V; 120A; 300W; PG-TO220-3 Mounting: THT Power dissipation: 300W Polarisation: unipolar Technology: OptiMOS™ 3 Drain current: 120A Kind of channel: enhancement Drain-source voltage: 120V Type of transistor: N-MOSFET Gate-source voltage: ±20V Kind of package: tube Case: PG-TO220-3 On-state resistance: 4.8mΩ |
auf Bestellung 507 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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IPP114N12N3GXKSA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 120V; 75A; 136W; PG-TO220-3 Mounting: THT Power dissipation: 136W Polarisation: unipolar Technology: OptiMOS™ 3 Drain current: 75A Kind of channel: enhancement Drain-source voltage: 120V Type of transistor: N-MOSFET Gate-source voltage: ±20V Kind of package: tube Case: PG-TO220-3 On-state resistance: 11.4mΩ |
auf Bestellung 48 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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IPP041N12N3GXKSA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 120V; 120A; 300W; PG-TO220-3 Mounting: THT Power dissipation: 300W Polarisation: unipolar Technology: OptiMOS™ 3 Drain current: 120A Kind of channel: enhancement Drain-source voltage: 120V Type of transistor: N-MOSFET Gate-source voltage: ±20V Kind of package: tube Case: PG-TO220-3 On-state resistance: 4.1mΩ |
auf Bestellung 48 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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IKW08N120CS7XKSA1 | INFINEON TECHNOLOGIES |
Category: THT IGBT transistors Description: Transistor: IGBT; 1.2kV; 14A; 53W; TO247-3 Type of transistor: IGBT Collector-emitter voltage: 1.2kV Collector current: 14A Power dissipation: 53W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 24A Mounting: THT Gate charge: 52nC Kind of package: tube Features of semiconductor devices: integrated anti-parallel diode Turn-off time: 0.5µs Technology: TRENCHSTOP™ Turn-on time: 31ns |
auf Bestellung 40 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| IPB024N10N5ATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 180A; 250W; TO263-7 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 180A Power dissipation: 250W Case: TO263-7 On-state resistance: 2mΩ Mounting: SMD Gate charge: 138nC Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1000 Stücke Im Einkaufswagen Stück im Wert von UAH | |
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IPB024N08N5ATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 120A; 375W; PG-TO263-3 Kind of channel: enhancement Mounting: SMD Technology: OptiMOS™ 5 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 80V Drain current: 120A On-state resistance: 2.4mΩ Power dissipation: 375W Gate-source voltage: ±20V Case: PG-TO263-3 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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IPP024N08NF2SAKMA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 182A; 214W; TO220-3 Kind of channel: enhancement Mounting: THT Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 80V Drain current: 182A Gate charge: 89nC On-state resistance: 2.4mΩ Power dissipation: 214W Case: TO220-3 |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1000 Stücke Im Einkaufswagen Stück im Wert von UAH |
| IKZA50N65RH5XKSA1 | INFINEON TECHNOLOGIES |
Category: THT IGBT transistors Description: Transistor: IGBT; 650V; 80A; 305W; TO247-4 Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 80A Power dissipation: 305W Case: TO247-4 Pulsed collector current: 200A Mounting: THT Gate charge: 0.12µC |
auf Bestellung 960 Stücke: Lieferzeit 14-21 Tag (e) |
Mindestbestellmenge: 240 Stücke Im Einkaufswagen Stück im Wert von UAH | |
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IPC50N04S5-5R8 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 50A; 42W; PG-TDSON-8 Type of transistor: N-MOSFET Technology: OptiMOS™ 5 Polarisation: unipolar Drain-source voltage: 40V Drain current: 50A Power dissipation: 42W Case: PG-TDSON-8 Gate-source voltage: ±20V On-state resistance: 5.8mΩ Mounting: SMD Kind of channel: enhancement Gate charge: 18nC |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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IPC50N04S5L-5R5 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 50A; 42W; PG-TDSON-8 Type of transistor: N-MOSFET Technology: OptiMOS™ 5 Polarisation: unipolar Drain-source voltage: 40V Drain current: 50A Power dissipation: 42W Case: PG-TDSON-8 Gate-source voltage: ±16V On-state resistance: 5.5mΩ Mounting: SMD Kind of channel: enhancement Gate charge: 23nC |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| IAUA250N04S6N007AUMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; OptiMOS™ 6; unipolar; 40V; 55A; Idm: 1350A Type of transistor: N-MOSFET Technology: OptiMOS™ 6 Polarisation: unipolar Drain-source voltage: 40V Drain current: 55A Power dissipation: 250W Case: PG-HSOF-5 Gate-source voltage: ±20V On-state resistance: 0.8Ω Mounting: SMD Kind of channel: enhancement Kind of package: reel; tape Pulsed drain current: 1350A Gate charge: 151nC |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2000 Stücke Im Einkaufswagen Stück im Wert von UAH | |
| IAUA250N04S6N007EAUMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; OptiMOS™ 6; unipolar; 40V; 55A; Idm: 1300A Type of transistor: N-MOSFET Technology: OptiMOS™ 6 Polarisation: unipolar Drain-source voltage: 40V Drain current: 55A Power dissipation: 192W Case: PG-HSOF-5 Gate-source voltage: ±20V On-state resistance: 0.83Ω Mounting: SMD Kind of channel: enhancement Kind of package: reel; tape Pulsed drain current: 1.3kA Gate charge: 128nC |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2000 Stücke Im Einkaufswagen Stück im Wert von UAH | |
| IAUA250N04S6N005AUMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; OptiMOS™ 6; unipolar; 40V; 62A; Idm: 1500A Type of transistor: N-MOSFET Technology: OptiMOS™ 6 Polarisation: unipolar Drain-source voltage: 40V Drain current: 62A Power dissipation: 250W Case: PG-HSOF-5 Gate-source voltage: ±20V On-state resistance: 0.7mΩ Mounting: SMD Kind of channel: enhancement Kind of package: reel; tape Pulsed drain current: 1.5kA Gate charge: 170nC |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2000 Stücke Im Einkaufswagen Stück im Wert von UAH | |
| IAUA250N04S6N006AUMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; OptiMOS™ 6; unipolar; 40V; 57A; Idm: 1500A Type of transistor: N-MOSFET Technology: OptiMOS™ 6 Polarisation: unipolar Drain-source voltage: 40V Drain current: 57A Power dissipation: 250W Case: PG-HSOF-5 Gate-source voltage: ±20V On-state resistance: 0.7mΩ Mounting: SMD Kind of channel: enhancement Kind of package: reel; tape Pulsed drain current: 1.5kA Gate charge: 169nC |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2000 Stücke Im Einkaufswagen Stück im Wert von UAH | |
| IAUA250N04S6N008AUMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; OptiMOS™ 6; unipolar; 40V; 51A; Idm: 1100A Type of transistor: N-MOSFET Technology: OptiMOS™ 6 Polarisation: unipolar Drain-source voltage: 40V Drain current: 51A Power dissipation: 172W Case: PG-HSOF-5 Gate-source voltage: ±20V On-state resistance: 960µΩ Mounting: SMD Kind of channel: enhancement Kind of package: reel; tape Pulsed drain current: 1100A Gate charge: 109nC |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2000 Stücke Im Einkaufswagen Stück im Wert von UAH | |
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IRF7807ZTRPBF | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 11A; 2.5W; SO8 Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 30V Drain current: 11A Power dissipation: 2.5W Case: SO8 Mounting: SMD Kind of package: reel Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 4000 Stücke Im Einkaufswagen Stück im Wert von UAH |
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IPP90R800C3XKSA2 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 900V; 6.9A; 104W; TO220-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 900V Drain current: 6.9A Case: TO220-3 On-state resistance: 0.8Ω Mounting: THT Kind of channel: enhancement Power dissipation: 104W Gate charge: 42nC |
auf Bestellung 17 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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IPN50R800CEATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 4.8A; 5W; PG-SOT223 Type of transistor: N-MOSFET Technology: CoolMOS™ CE Polarisation: unipolar Drain-source voltage: 500V Drain current: 4.8A Power dissipation: 5W Case: PG-SOT223 Gate-source voltage: ±20V On-state resistance: 0.8Ω Mounting: SMD Kind of channel: enhancement Gate charge: 12.4nC |
auf Bestellung 2897 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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IPI90R800C3XKSA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 900V; 4.4A; 104W; PG-TO262-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 900V Drain current: 4.4A Case: PG-TO262-3 Gate-source voltage: ±20V On-state resistance: 0.8Ω Mounting: THT Kind of channel: enhancement Power dissipation: 104W Technology: CoolMOS™ |
auf Bestellung 271 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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IPD60R800CEAUMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 8.4A; 74W; DPAK,TO252 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 8.4A Power dissipation: 74W Case: DPAK; TO252 On-state resistance: 0.8Ω Mounting: SMD Kind of channel: enhancement Gate charge: 17.2nC |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH |
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IPW90R800C3FKSA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 900V; 4.4A; 104W; PG-TO247-3 Type of transistor: N-MOSFET Technology: CoolMOS™ Polarisation: unipolar Drain-source voltage: 900V Drain current: 4.4A Power dissipation: 104W Case: PG-TO247-3 Gate-source voltage: ±20V On-state resistance: 0.8Ω Mounting: THT Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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IPD60R800CEAUMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; N; 600V; 8.4A; 74W; DPAK,TO252 Type of transistor: N-MOSFET Technology: MOSFET Polarisation: N Drain-source voltage: 600V Drain current: 8.4A Power dissipation: 74W Case: DPAK; TO252 Gate-source voltage: 20V On-state resistance: 0.8Ω Mounting: SMD Kind of channel: enhancement Gate charge: 17.2nC |
auf Bestellung 7500 Stücke: Lieferzeit 14-21 Tag (e) |
Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH |
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IRFB5615PBF | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 150V; 35A; 144W; TO220AB Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 150V Drain current: 35A Power dissipation: 144W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 39mΩ Mounting: THT Gate charge: 26nC Kind of package: tube Kind of channel: enhancement |
auf Bestellung 125 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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BAT6405E6327HTSA1 | INFINEON TECHNOLOGIES |
Category: SMD Schottky diodes Description: Diode: Schottky switching; SOT23; SMD; 40V; 0.25A; 250mW Type of diode: Schottky switching Case: SOT23 Mounting: SMD Max. off-state voltage: 40V Load current: 0.25A Semiconductor structure: common cathode; double Max. forward impulse current: 0.8A Power dissipation: 0.25W Max. forward voltage: 0.75V |
auf Bestellung 18265 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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IPD26N06S2L35ATMA2 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 55V; 22A; Idm: 120A; 68W; PG-TO252-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 55V Drain current: 22A Pulsed drain current: 120A Power dissipation: 68W Case: PG-TO252-3 Gate-source voltage: ±20V On-state resistance: 35mΩ Mounting: SMD Gate charge: 10nC Kind of package: reel Kind of channel: enhancement Technology: OptiMOS™ |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH |
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IPB026N06NATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 100A; 136W; PG-TO263-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 100A Power dissipation: 136W Case: PG-TO263-3 Gate-source voltage: ±20V On-state resistance: 2.6mΩ Mounting: SMD Kind of channel: enhancement Technology: OptiMOS™ |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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CY8CMBR3116-LQXI | INFINEON TECHNOLOGIES |
Category: Interfaces others - integrated circuits Description: IC: PSoC microcontroller; 1.71÷5.5VDC; GPIO,I2C; SMD; QFN24 Case: QFN24 Type of integrated circuit: PSoC microcontroller Interface: GPIO; I2C Mounting: SMD Operating temperature: -40...85°C Supply voltage: 1.71...5.5V DC |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 490 Stücke Im Einkaufswagen Stück im Wert von UAH |
| SLB9670VQ20FW785XTMA1 | INFINEON TECHNOLOGIES |
Category: Unclassified Description: SLB9670VQ20FW785XTMA1 |
auf Bestellung 10000 Stücke: Lieferzeit 14-21 Tag (e) |
Mindestbestellmenge: 5000 Stücke Im Einkaufswagen Stück im Wert von UAH | |
| PVA3354NSPBF | INFINEON TECHNOLOGIES |
Category: One Phase Solid State Relays Description: Relay: solid state; SPST-NO; Ucntrl: 1.2VDC; Icntrl max: 25mA; PVA Type of relay: solid state Contacts configuration: SPST-NO Control voltage: 1.2V DC Control current max.: 25mA Max. operating current: 150mA Manufacturer series: PVA On-state resistance: 24Ω Mounting: SMT Case: SMD8 Body dimensions: 9.39x6.47x3.93mm Insulation voltage: 4kV Kind of output: MOSFET Operating temperature: -40...85°C |
auf Bestellung 100 Stücke: Lieferzeit 14-21 Tag (e) |
Mindestbestellmenge: 50 Stücke Im Einkaufswagen Stück im Wert von UAH | |
| S80KS2564GACHV040 | INFINEON TECHNOLOGIES |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 256MbDRAM; 200MHz; 35ns; FBGA24; -40÷105°C Kind of memory: DRAM Type of integrated circuit: DRAM memory Case: FBGA24 Interface: HyperBus Kind of package: in-tray Mounting: SMD Operating temperature: -40...105°C Access time: 35ns Supply voltage: 1.7...2V DC Clock frequency: 200MHz Memory: 256Mb DRAM |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 260 Stücke Im Einkaufswagen Stück im Wert von UAH | |
| S80KS2562GABHI020 | INFINEON TECHNOLOGIES |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 256MbDRAM; 200MHz; 35ns; FBGA24; -40÷85°C; in-tray Kind of memory: DRAM Type of integrated circuit: DRAM memory Case: FBGA24 Interface: HyperBus Kind of package: in-tray Mounting: SMD Operating temperature: -40...85°C Access time: 35ns Supply voltage: 1.7...2V DC Clock frequency: 200MHz Memory: 256Mb DRAM |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 338 Stücke Im Einkaufswagen Stück im Wert von UAH | |
| S80KS2562GABHB023 | INFINEON TECHNOLOGIES |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 256MbDRAM; 200MHz; 35ns; FBGA24; -40÷105°C Kind of memory: DRAM Type of integrated circuit: DRAM memory Case: FBGA24 Interface: HyperBus Kind of package: reel; tape Mounting: SMD Operating temperature: -40...105°C Access time: 35ns Supply voltage: 1.7...2V DC Clock frequency: 200MHz Memory: 256Mb DRAM |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH | |
| S80KS2563GABHI020 | INFINEON TECHNOLOGIES |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 256MbDRAM; 200MHz; 35ns; FBGA24; -40÷85°C; in-tray Kind of memory: DRAM Type of integrated circuit: DRAM memory Case: FBGA24 Interface: HyperBus Kind of package: in-tray Mounting: SMD Operating temperature: -40...85°C Access time: 35ns Supply voltage: 1.7...2V DC Clock frequency: 200MHz Memory: 256Mb DRAM |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 338 Stücke Im Einkaufswagen Stück im Wert von UAH | |
| S80KS2564GACHI040 | INFINEON TECHNOLOGIES |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 256MbDRAM; 200MHz; 35ns; FBGA24; -40÷85°C; in-tray Kind of memory: DRAM Type of integrated circuit: DRAM memory Case: FBGA24 Interface: HyperBus Kind of package: in-tray Mounting: SMD Operating temperature: -40...85°C Access time: 35ns Supply voltage: 1.7...2V DC Clock frequency: 200MHz Memory: 256Mb DRAM |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 260 Stücke Im Einkaufswagen Stück im Wert von UAH | |
| S80KS2564GACHI043 | INFINEON TECHNOLOGIES |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 256MbDRAM; 200MHz; 35ns; FBGA24; -40÷85°C Kind of memory: DRAM Type of integrated circuit: DRAM memory Case: FBGA24 Interface: HyperBus Kind of package: reel; tape Mounting: SMD Operating temperature: -40...85°C Access time: 35ns Supply voltage: 1.7...2V DC Clock frequency: 200MHz Memory: 256Mb DRAM |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH | |
| S80KS2564GACHV043 | INFINEON TECHNOLOGIES |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 256MbDRAM; 200MHz; 35ns; FBGA24; -40÷105°C Kind of memory: DRAM Type of integrated circuit: DRAM memory Case: FBGA24 Interface: HyperBus Kind of package: reel; tape Mounting: SMD Operating temperature: -40...105°C Access time: 35ns Supply voltage: 1.7...2V DC Clock frequency: 200MHz Memory: 256Mb DRAM |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH | |
 |
ITS4880R | INFINEON TECHNOLOGIES |
Category: Power switches - integrated circuits Description: IC: power switch; high-side; 0.625A; Ch: 8; N-Channel; SMD; BSSOP36 Type of integrated circuit: power switch Kind of integrated circuit: high-side Output current: 0.625A Number of channels: 8 Kind of output: N-Channel Mounting: SMD Case: BSSOP36 Supply voltage: 11...45V DC Technology: Industrial PROFET On-state resistance: 0.15Ω |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
|
|
BSC059N04LSGATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 62A; 50W; PG-TDSON-8 Type of transistor: N-MOSFET Technology: OptiMOS™ 3 Polarisation: unipolar Drain-source voltage: 40V Drain current: 62A Power dissipation: 50W Case: PG-TDSON-8 Gate-source voltage: ±20V On-state resistance: 5.9mΩ Mounting: SMD Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 5000 Stücke Im Einkaufswagen Stück im Wert von UAH |
|
|
BSC016N06NSATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 100A; 139W; PG-TDSON-8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 100A Power dissipation: 139W Case: PG-TDSON-8 Gate-source voltage: ±20V On-state resistance: 1.6mΩ Mounting: SMD Kind of channel: enhancement Technology: OptiMOS™ |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 5000 Stücke Im Einkaufswagen Stück im Wert von UAH |
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|
BTS3405G | INFINEON TECHNOLOGIES |
Category: Power switches - integrated circuits Description: IC: power switch; low-side; 0.35A; Ch: 2; N-Channel; SMD; HITFET® Output current: 0.35A Type of integrated circuit: power switch Kind of output: N-Channel Technology: HITFET® Output voltage: 10V Case: PG-DSO-8-25 Kind of integrated circuit: low-side Number of channels: 2 On-state resistance: 0.35Ω Mounting: SMD |
auf Bestellung 2050 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| CY8C4013SXI-400 | INFINEON TECHNOLOGIES |
Category: Infineon Technologies microcontrollers Description: CY8C4013SXI-400 |
auf Bestellung 2716 Stücke: Lieferzeit 14-21 Tag (e) |
Mindestbestellmenge: 97 Stücke Im Einkaufswagen Stück im Wert von UAH | |
| BGS12SN6E6327XTSA1 | INFINEON TECHNOLOGIES |
Category: Analog multiplexers and switches Description: IC: RF switch; SPDT; Ch: 2; TSNP6; 1.8÷3.5VDC; 0.1÷6GHz Type of integrated circuit: RF switch Output configuration: SPDT Number of channels: 2 Case: TSNP6 Supply voltage: 1.8...3.5V DC Mounting: SMD Bandwidth: 0.1...6GHz Application: telecommunication |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 15000 Stücke Im Einkaufswagen Stück im Wert von UAH | |
 |
IRFR4615TRLPBF | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 150V; 33A; 144W; DPAK Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 150V Drain current: 33A Power dissipation: 144W Case: DPAK Mounting: SMD Kind of package: reel Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH |
| DD750S65K3NOSA1 | INFINEON TECHNOLOGIES |
Category: Diode modules Description: Module: diode Type of semiconductor module: diode |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2 Stücke Im Einkaufswagen Stück im Wert von UAH |
| ISA250250N04LMDSXTMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Mounting: SMD
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Mounting: SMD
Produkt ist nicht verfügbar
Mindestbestellmenge: 4000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| TLE42994EXUMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.15A; SMD; Ch: 1
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Output voltage: 3.3V
Output current: 0.15A
Case: PG-SSOP-14-EP
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...150°C
Number of channels: 1
Input voltage: 4.4...45V
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.15A; SMD; Ch: 1
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Output voltage: 3.3V
Output current: 0.15A
Case: PG-SSOP-14-EP
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...150°C
Number of channels: 1
Input voltage: 4.4...45V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| TLE4299GMV33XUMA2 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.15A; PG-DSO-14
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Output voltage: 3.3V
Output current: 0.15A
Case: PG-DSO-14
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...150°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 4.4...45V DC
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.15A; PG-DSO-14
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Output voltage: 3.3V
Output current: 0.15A
Case: PG-DSO-14
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...150°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 4.4...45V DC
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| CY8C24123A-24SXI |
|
Hersteller: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: PSoC microcontroller; 24MHz; SO8; 256BSRAM,4kBFLASH
Interface: GPIO; I2C; SPI; UART
Clock frequency: 24MHz
Integrated circuit features: watchdog
Kind of core: 8-bit
Memory: 256B SRAM; 4kB FLASH
Case: SO8
Mounting: SMD
Supply voltage: 3...5.25V DC
Number of inputs/outputs: 6
Type of integrated circuit: PSoC microcontroller
Operating temperature: -40...85°C
Category: Infineon Technologies microcontrollers
Description: IC: PSoC microcontroller; 24MHz; SO8; 256BSRAM,4kBFLASH
Interface: GPIO; I2C; SPI; UART
Clock frequency: 24MHz
Integrated circuit features: watchdog
Kind of core: 8-bit
Memory: 256B SRAM; 4kB FLASH
Case: SO8
Mounting: SMD
Supply voltage: 3...5.25V DC
Number of inputs/outputs: 6
Type of integrated circuit: PSoC microcontroller
Operating temperature: -40...85°C
Produkt ist nicht verfügbar
Mindestbestellmenge: 2425 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| CY8C24123A-24SXIT |
|
Hersteller: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: microcontroller
Type of integrated circuit: microcontroller
Category: Infineon Technologies microcontrollers
Description: IC: microcontroller
Type of integrated circuit: microcontroller
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| IPD35N10S3L26ATMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS® -T; unipolar; 100V; 25A; Idm: 140A
Type of transistor: N-MOSFET
Technology: OptiMOS® -T
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 25A
Pulsed drain current: 140A
Power dissipation: 71W
Case: PG-TO252-3-11
Gate-source voltage: ±20V
On-state resistance: 24mΩ
Mounting: SMD
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS® -T; unipolar; 100V; 25A; Idm: 140A
Type of transistor: N-MOSFET
Technology: OptiMOS® -T
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 25A
Pulsed drain current: 140A
Power dissipation: 71W
Case: PG-TO252-3-11
Gate-source voltage: ±20V
On-state resistance: 24mΩ
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| BSC052N08NS5ATMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 95A; 83W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 95A
Power dissipation: 83W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 5.2mΩ
Mounting: SMD
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 95A; 83W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 95A
Power dissipation: 83W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 5.2mΩ
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
Mindestbestellmenge: 5000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| BSC027N10NS5ATMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 100A; 214W; TSON8
Type of transistor: N-MOSFET
On-state resistance: 2.7mΩ
Mounting: SMD
Power dissipation: 214W
Gate charge: 111nC
Polarisation: unipolar
Drain current: 100A
Kind of channel: enhancement
Drain-source voltage: 100V
Case: TSON8
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 100A; 214W; TSON8
Type of transistor: N-MOSFET
On-state resistance: 2.7mΩ
Mounting: SMD
Power dissipation: 214W
Gate charge: 111nC
Polarisation: unipolar
Drain current: 100A
Kind of channel: enhancement
Drain-source voltage: 100V
Case: TSON8
Produkt ist nicht verfügbar
Mindestbestellmenge: 5000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| BSL202SNH6327XTSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 7.5A; 2W; TSOP6
Power dissipation: 2W
Gate charge: 8.7nC
Polarisation: unipolar
Drain current: 7.5A
Kind of channel: enhancement
Drain-source voltage: 20V
Application: automotive industry
Type of transistor: N-MOSFET
Case: TSOP6
On-state resistance: 17mΩ
Mounting: SMD
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 7.5A; 2W; TSOP6
Power dissipation: 2W
Gate charge: 8.7nC
Polarisation: unipolar
Drain current: 7.5A
Kind of channel: enhancement
Drain-source voltage: 20V
Application: automotive industry
Type of transistor: N-MOSFET
Case: TSOP6
On-state resistance: 17mΩ
Mounting: SMD
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| CY7C1020DV33-10ZSXIT |
|
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 512kbSRAM; 32kx16bit; 10ns; TSOP44 II; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 512kb SRAM
Memory organisation: 32kx16bit
Access time: 10ns
Case: TSOP44 II
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Supply voltage: 3...3.6V DC
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 512kbSRAM; 32kx16bit; 10ns; TSOP44 II; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 512kb SRAM
Memory organisation: 32kx16bit
Access time: 10ns
Case: TSOP44 II
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Supply voltage: 3...3.6V DC
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| CY7C1020D-10ZSXI |
|
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 512kbSRAM; 32kx16bit; 10ns; TSOP44 II; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 512kb SRAM
Memory organisation: 32kx16bit
Access time: 10ns
Case: TSOP44 II
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Supply voltage: 4.5...5.5V DC
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 512kbSRAM; 32kx16bit; 10ns; TSOP44 II; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 512kb SRAM
Memory organisation: 32kx16bit
Access time: 10ns
Case: TSOP44 II
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Supply voltage: 4.5...5.5V DC
Produkt ist nicht verfügbar
Mindestbestellmenge: 675 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| CY7C1020DV33-10ZSXI |
|
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 512kbSRAM; 32kx16bit; 10ns; TSOP44 II; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 512kb SRAM
Memory organisation: 32kx16bit
Access time: 10ns
Case: TSOP44 II
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Supply voltage: 3...3.6V DC
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 512kbSRAM; 32kx16bit; 10ns; TSOP44 II; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 512kb SRAM
Memory organisation: 32kx16bit
Access time: 10ns
Case: TSOP44 II
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Supply voltage: 3...3.6V DC
Produkt ist nicht verfügbar
Mindestbestellmenge: 135 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| IPP034N08N5AKSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 120A; 167W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 120A
Power dissipation: 167W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 3.4mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 120A; 167W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 120A
Power dissipation: 167W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 3.4mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BTS3080TF |
|
Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 3A; Ch: 1; N-Channel; SMD; PG-TO252-3
Type of integrated circuit: power switch
Kind of integrated circuit: low-side
Output current: 3A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: PG-TO252-3
On-state resistance: 0.16Ω
Technology: HITFET®
Operating temperature: -40...150°C
Output voltage: 40V
Turn-on time: 115µs
Turn-off time: 210µs
Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 3A; Ch: 1; N-Channel; SMD; PG-TO252-3
Type of integrated circuit: power switch
Kind of integrated circuit: low-side
Output current: 3A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: PG-TO252-3
On-state resistance: 0.16Ω
Technology: HITFET®
Operating temperature: -40...150°C
Output voltage: 40V
Turn-on time: 115µs
Turn-off time: 210µs
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BTS3050TF |
|
Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 4A; Ch: 1; N-Channel; SMD; PG-TO252-3
Mounting: SMD
Output current: 4A
Type of integrated circuit: power switch
Kind of output: N-Channel
Operating temperature: -40...150°C
Technology: HITFET®
Turn-on time: 115µs
Output voltage: 40V
Case: PG-TO252-3
Turn-off time: 210µs
Kind of integrated circuit: low-side
Number of channels: 1
On-state resistance: 0.1Ω
Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 4A; Ch: 1; N-Channel; SMD; PG-TO252-3
Mounting: SMD
Output current: 4A
Type of integrated circuit: power switch
Kind of output: N-Channel
Operating temperature: -40...150°C
Technology: HITFET®
Turn-on time: 115µs
Output voltage: 40V
Case: PG-TO252-3
Turn-off time: 210µs
Kind of integrated circuit: low-side
Number of channels: 1
On-state resistance: 0.1Ω
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IPI50R350CPXKSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 10A; 89W; PG-TO262-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 10A
Power dissipation: 89W
Case: PG-TO262-3
Gate-source voltage: ±20V
On-state resistance: 0.35Ω
Mounting: THT
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 10A; 89W; PG-TO262-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 10A
Power dissipation: 89W
Case: PG-TO262-3
Gate-source voltage: ±20V
On-state resistance: 0.35Ω
Mounting: THT
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IPP048N12N3GXKSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 120V; 120A; 300W; PG-TO220-3
Mounting: THT
Power dissipation: 300W
Polarisation: unipolar
Technology: OptiMOS™ 3
Drain current: 120A
Kind of channel: enhancement
Drain-source voltage: 120V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: tube
Case: PG-TO220-3
On-state resistance: 4.8mΩ
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 120V; 120A; 300W; PG-TO220-3
Mounting: THT
Power dissipation: 300W
Polarisation: unipolar
Technology: OptiMOS™ 3
Drain current: 120A
Kind of channel: enhancement
Drain-source voltage: 120V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: tube
Case: PG-TO220-3
On-state resistance: 4.8mΩ
auf Bestellung 507 Stücke:
Lieferzeit 14-21 Tag (e)
| IPP114N12N3GXKSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 120V; 75A; 136W; PG-TO220-3
Mounting: THT
Power dissipation: 136W
Polarisation: unipolar
Technology: OptiMOS™ 3
Drain current: 75A
Kind of channel: enhancement
Drain-source voltage: 120V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: tube
Case: PG-TO220-3
On-state resistance: 11.4mΩ
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 120V; 75A; 136W; PG-TO220-3
Mounting: THT
Power dissipation: 136W
Polarisation: unipolar
Technology: OptiMOS™ 3
Drain current: 75A
Kind of channel: enhancement
Drain-source voltage: 120V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: tube
Case: PG-TO220-3
On-state resistance: 11.4mΩ
auf Bestellung 48 Stücke:
Lieferzeit 14-21 Tag (e)
| IPP041N12N3GXKSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 120V; 120A; 300W; PG-TO220-3
Mounting: THT
Power dissipation: 300W
Polarisation: unipolar
Technology: OptiMOS™ 3
Drain current: 120A
Kind of channel: enhancement
Drain-source voltage: 120V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: tube
Case: PG-TO220-3
On-state resistance: 4.1mΩ
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 120V; 120A; 300W; PG-TO220-3
Mounting: THT
Power dissipation: 300W
Polarisation: unipolar
Technology: OptiMOS™ 3
Drain current: 120A
Kind of channel: enhancement
Drain-source voltage: 120V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: tube
Case: PG-TO220-3
On-state resistance: 4.1mΩ
auf Bestellung 48 Stücke:
Lieferzeit 14-21 Tag (e)
| IKW08N120CS7XKSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 14A; 53W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 14A
Power dissipation: 53W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 24A
Mounting: THT
Gate charge: 52nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Turn-off time: 0.5µs
Technology: TRENCHSTOP™
Turn-on time: 31ns
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 14A; 53W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 14A
Power dissipation: 53W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 24A
Mounting: THT
Gate charge: 52nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Turn-off time: 0.5µs
Technology: TRENCHSTOP™
Turn-on time: 31ns
auf Bestellung 40 Stücke:
Lieferzeit 14-21 Tag (e)
| IPB024N10N5ATMA1 |
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 180A; 250W; TO263-7
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 180A
Power dissipation: 250W
Case: TO263-7
On-state resistance: 2mΩ
Mounting: SMD
Gate charge: 138nC
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 180A; 250W; TO263-7
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 180A
Power dissipation: 250W
Case: TO263-7
On-state resistance: 2mΩ
Mounting: SMD
Gate charge: 138nC
Kind of channel: enhancement
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
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Stück im Wert von UAH
| IPB024N08N5ATMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 120A; 375W; PG-TO263-3
Kind of channel: enhancement
Mounting: SMD
Technology: OptiMOS™ 5
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 120A
On-state resistance: 2.4mΩ
Power dissipation: 375W
Gate-source voltage: ±20V
Case: PG-TO263-3
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 120A; 375W; PG-TO263-3
Kind of channel: enhancement
Mounting: SMD
Technology: OptiMOS™ 5
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 120A
On-state resistance: 2.4mΩ
Power dissipation: 375W
Gate-source voltage: ±20V
Case: PG-TO263-3
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IPP024N08NF2SAKMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 182A; 214W; TO220-3
Kind of channel: enhancement
Mounting: THT
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 182A
Gate charge: 89nC
On-state resistance: 2.4mΩ
Power dissipation: 214W
Case: TO220-3
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 182A; 214W; TO220-3
Kind of channel: enhancement
Mounting: THT
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 182A
Gate charge: 89nC
On-state resistance: 2.4mΩ
Power dissipation: 214W
Case: TO220-3
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| IKZA50N65RH5XKSA1 |
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 80A; 305W; TO247-4
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 80A
Power dissipation: 305W
Case: TO247-4
Pulsed collector current: 200A
Mounting: THT
Gate charge: 0.12µC
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 80A; 305W; TO247-4
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 80A
Power dissipation: 305W
Case: TO247-4
Pulsed collector current: 200A
Mounting: THT
Gate charge: 0.12µC
auf Bestellung 960 Stücke:
Lieferzeit 14-21 Tag (e)
| IPC50N04S5-5R8 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 50A; 42W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 50A
Power dissipation: 42W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 5.8mΩ
Mounting: SMD
Kind of channel: enhancement
Gate charge: 18nC
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 50A; 42W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 50A
Power dissipation: 42W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 5.8mΩ
Mounting: SMD
Kind of channel: enhancement
Gate charge: 18nC
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IPC50N04S5L-5R5 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 50A; 42W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 50A
Power dissipation: 42W
Case: PG-TDSON-8
Gate-source voltage: ±16V
On-state resistance: 5.5mΩ
Mounting: SMD
Kind of channel: enhancement
Gate charge: 23nC
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 50A; 42W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 50A
Power dissipation: 42W
Case: PG-TDSON-8
Gate-source voltage: ±16V
On-state resistance: 5.5mΩ
Mounting: SMD
Kind of channel: enhancement
Gate charge: 23nC
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IAUA250N04S6N007AUMA1 |
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ 6; unipolar; 40V; 55A; Idm: 1350A
Type of transistor: N-MOSFET
Technology: OptiMOS™ 6
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 55A
Power dissipation: 250W
Case: PG-HSOF-5
Gate-source voltage: ±20V
On-state resistance: 0.8Ω
Mounting: SMD
Kind of channel: enhancement
Kind of package: reel; tape
Pulsed drain current: 1350A
Gate charge: 151nC
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ 6; unipolar; 40V; 55A; Idm: 1350A
Type of transistor: N-MOSFET
Technology: OptiMOS™ 6
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 55A
Power dissipation: 250W
Case: PG-HSOF-5
Gate-source voltage: ±20V
On-state resistance: 0.8Ω
Mounting: SMD
Kind of channel: enhancement
Kind of package: reel; tape
Pulsed drain current: 1350A
Gate charge: 151nC
Produkt ist nicht verfügbar
Mindestbestellmenge: 2000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| IAUA250N04S6N007EAUMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ 6; unipolar; 40V; 55A; Idm: 1300A
Type of transistor: N-MOSFET
Technology: OptiMOS™ 6
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 55A
Power dissipation: 192W
Case: PG-HSOF-5
Gate-source voltage: ±20V
On-state resistance: 0.83Ω
Mounting: SMD
Kind of channel: enhancement
Kind of package: reel; tape
Pulsed drain current: 1.3kA
Gate charge: 128nC
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ 6; unipolar; 40V; 55A; Idm: 1300A
Type of transistor: N-MOSFET
Technology: OptiMOS™ 6
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 55A
Power dissipation: 192W
Case: PG-HSOF-5
Gate-source voltage: ±20V
On-state resistance: 0.83Ω
Mounting: SMD
Kind of channel: enhancement
Kind of package: reel; tape
Pulsed drain current: 1.3kA
Gate charge: 128nC
Produkt ist nicht verfügbar
Mindestbestellmenge: 2000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| IAUA250N04S6N005AUMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ 6; unipolar; 40V; 62A; Idm: 1500A
Type of transistor: N-MOSFET
Technology: OptiMOS™ 6
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 62A
Power dissipation: 250W
Case: PG-HSOF-5
Gate-source voltage: ±20V
On-state resistance: 0.7mΩ
Mounting: SMD
Kind of channel: enhancement
Kind of package: reel; tape
Pulsed drain current: 1.5kA
Gate charge: 170nC
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ 6; unipolar; 40V; 62A; Idm: 1500A
Type of transistor: N-MOSFET
Technology: OptiMOS™ 6
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 62A
Power dissipation: 250W
Case: PG-HSOF-5
Gate-source voltage: ±20V
On-state resistance: 0.7mΩ
Mounting: SMD
Kind of channel: enhancement
Kind of package: reel; tape
Pulsed drain current: 1.5kA
Gate charge: 170nC
Produkt ist nicht verfügbar
Mindestbestellmenge: 2000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| IAUA250N04S6N006AUMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ 6; unipolar; 40V; 57A; Idm: 1500A
Type of transistor: N-MOSFET
Technology: OptiMOS™ 6
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 57A
Power dissipation: 250W
Case: PG-HSOF-5
Gate-source voltage: ±20V
On-state resistance: 0.7mΩ
Mounting: SMD
Kind of channel: enhancement
Kind of package: reel; tape
Pulsed drain current: 1.5kA
Gate charge: 169nC
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ 6; unipolar; 40V; 57A; Idm: 1500A
Type of transistor: N-MOSFET
Technology: OptiMOS™ 6
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 57A
Power dissipation: 250W
Case: PG-HSOF-5
Gate-source voltage: ±20V
On-state resistance: 0.7mΩ
Mounting: SMD
Kind of channel: enhancement
Kind of package: reel; tape
Pulsed drain current: 1.5kA
Gate charge: 169nC
Produkt ist nicht verfügbar
Mindestbestellmenge: 2000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| IAUA250N04S6N008AUMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ 6; unipolar; 40V; 51A; Idm: 1100A
Type of transistor: N-MOSFET
Technology: OptiMOS™ 6
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 51A
Power dissipation: 172W
Case: PG-HSOF-5
Gate-source voltage: ±20V
On-state resistance: 960µΩ
Mounting: SMD
Kind of channel: enhancement
Kind of package: reel; tape
Pulsed drain current: 1100A
Gate charge: 109nC
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ 6; unipolar; 40V; 51A; Idm: 1100A
Type of transistor: N-MOSFET
Technology: OptiMOS™ 6
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 51A
Power dissipation: 172W
Case: PG-HSOF-5
Gate-source voltage: ±20V
On-state resistance: 960µΩ
Mounting: SMD
Kind of channel: enhancement
Kind of package: reel; tape
Pulsed drain current: 1100A
Gate charge: 109nC
Produkt ist nicht verfügbar
Mindestbestellmenge: 2000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| IRF7807ZTRPBF |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 11A; 2.5W; SO8
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 11A
Power dissipation: 2.5W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 11A; 2.5W; SO8
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 11A
Power dissipation: 2.5W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
Mindestbestellmenge: 4000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| IPP90R800C3XKSA2 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 6.9A; 104W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 6.9A
Case: TO220-3
On-state resistance: 0.8Ω
Mounting: THT
Kind of channel: enhancement
Power dissipation: 104W
Gate charge: 42nC
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 6.9A; 104W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 6.9A
Case: TO220-3
On-state resistance: 0.8Ω
Mounting: THT
Kind of channel: enhancement
Power dissipation: 104W
Gate charge: 42nC
auf Bestellung 17 Stücke:
Lieferzeit 14-21 Tag (e)
| IPN50R800CEATMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 4.8A; 5W; PG-SOT223
Type of transistor: N-MOSFET
Technology: CoolMOS™ CE
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 4.8A
Power dissipation: 5W
Case: PG-SOT223
Gate-source voltage: ±20V
On-state resistance: 0.8Ω
Mounting: SMD
Kind of channel: enhancement
Gate charge: 12.4nC
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 4.8A; 5W; PG-SOT223
Type of transistor: N-MOSFET
Technology: CoolMOS™ CE
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 4.8A
Power dissipation: 5W
Case: PG-SOT223
Gate-source voltage: ±20V
On-state resistance: 0.8Ω
Mounting: SMD
Kind of channel: enhancement
Gate charge: 12.4nC
auf Bestellung 2897 Stücke:
Lieferzeit 14-21 Tag (e)
| IPI90R800C3XKSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 4.4A; 104W; PG-TO262-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 4.4A
Case: PG-TO262-3
Gate-source voltage: ±20V
On-state resistance: 0.8Ω
Mounting: THT
Kind of channel: enhancement
Power dissipation: 104W
Technology: CoolMOS™
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 4.4A; 104W; PG-TO262-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 4.4A
Case: PG-TO262-3
Gate-source voltage: ±20V
On-state resistance: 0.8Ω
Mounting: THT
Kind of channel: enhancement
Power dissipation: 104W
Technology: CoolMOS™
auf Bestellung 271 Stücke:
Lieferzeit 14-21 Tag (e)
| IPD60R800CEAUMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 8.4A; 74W; DPAK,TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 8.4A
Power dissipation: 74W
Case: DPAK; TO252
On-state resistance: 0.8Ω
Mounting: SMD
Kind of channel: enhancement
Gate charge: 17.2nC
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 8.4A; 74W; DPAK,TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 8.4A
Power dissipation: 74W
Case: DPAK; TO252
On-state resistance: 0.8Ω
Mounting: SMD
Kind of channel: enhancement
Gate charge: 17.2nC
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| IPW90R800C3FKSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 4.4A; 104W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 4.4A
Power dissipation: 104W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 0.8Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 4.4A; 104W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 4.4A
Power dissipation: 104W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 0.8Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IPD60R800CEAUMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; N; 600V; 8.4A; 74W; DPAK,TO252
Type of transistor: N-MOSFET
Technology: MOSFET
Polarisation: N
Drain-source voltage: 600V
Drain current: 8.4A
Power dissipation: 74W
Case: DPAK; TO252
Gate-source voltage: 20V
On-state resistance: 0.8Ω
Mounting: SMD
Kind of channel: enhancement
Gate charge: 17.2nC
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; N; 600V; 8.4A; 74W; DPAK,TO252
Type of transistor: N-MOSFET
Technology: MOSFET
Polarisation: N
Drain-source voltage: 600V
Drain current: 8.4A
Power dissipation: 74W
Case: DPAK; TO252
Gate-source voltage: 20V
On-state resistance: 0.8Ω
Mounting: SMD
Kind of channel: enhancement
Gate charge: 17.2nC
auf Bestellung 7500 Stücke:
Lieferzeit 14-21 Tag (e)
| IRFB5615PBF |
|
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 35A; 144W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 35A
Power dissipation: 144W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 39mΩ
Mounting: THT
Gate charge: 26nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 35A; 144W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 35A
Power dissipation: 144W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 39mΩ
Mounting: THT
Gate charge: 26nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 125 Stücke:
Lieferzeit 14-21 Tag (e)
| BAT6405E6327HTSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT23; SMD; 40V; 0.25A; 250mW
Type of diode: Schottky switching
Case: SOT23
Mounting: SMD
Max. off-state voltage: 40V
Load current: 0.25A
Semiconductor structure: common cathode; double
Max. forward impulse current: 0.8A
Power dissipation: 0.25W
Max. forward voltage: 0.75V
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT23; SMD; 40V; 0.25A; 250mW
Type of diode: Schottky switching
Case: SOT23
Mounting: SMD
Max. off-state voltage: 40V
Load current: 0.25A
Semiconductor structure: common cathode; double
Max. forward impulse current: 0.8A
Power dissipation: 0.25W
Max. forward voltage: 0.75V
auf Bestellung 18265 Stücke:
Lieferzeit 14-21 Tag (e)
| IPD26N06S2L35ATMA2 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 22A; Idm: 120A; 68W; PG-TO252-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 22A
Pulsed drain current: 120A
Power dissipation: 68W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 35mΩ
Mounting: SMD
Gate charge: 10nC
Kind of package: reel
Kind of channel: enhancement
Technology: OptiMOS™
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 22A; Idm: 120A; 68W; PG-TO252-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 22A
Pulsed drain current: 120A
Power dissipation: 68W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 35mΩ
Mounting: SMD
Gate charge: 10nC
Kind of package: reel
Kind of channel: enhancement
Technology: OptiMOS™
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
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| IPB026N06NATMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 100A; 136W; PG-TO263-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 100A
Power dissipation: 136W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 2.6mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 100A; 136W; PG-TO263-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 100A
Power dissipation: 136W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 2.6mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™
Produkt ist nicht verfügbar
Im Einkaufswagen
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| CY8CMBR3116-LQXI |
|
Hersteller: INFINEON TECHNOLOGIES
Category: Interfaces others - integrated circuits
Description: IC: PSoC microcontroller; 1.71÷5.5VDC; GPIO,I2C; SMD; QFN24
Case: QFN24
Type of integrated circuit: PSoC microcontroller
Interface: GPIO; I2C
Mounting: SMD
Operating temperature: -40...85°C
Supply voltage: 1.71...5.5V DC
Category: Interfaces others - integrated circuits
Description: IC: PSoC microcontroller; 1.71÷5.5VDC; GPIO,I2C; SMD; QFN24
Case: QFN24
Type of integrated circuit: PSoC microcontroller
Interface: GPIO; I2C
Mounting: SMD
Operating temperature: -40...85°C
Supply voltage: 1.71...5.5V DC
Produkt ist nicht verfügbar
Mindestbestellmenge: 490 Stücke
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| SLB9670VQ20FW785XTMA1 |
|
auf Bestellung 10000 Stücke:
Lieferzeit 14-21 Tag (e)
| PVA3354NSPBF |
|
Hersteller: INFINEON TECHNOLOGIES
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Ucntrl: 1.2VDC; Icntrl max: 25mA; PVA
Type of relay: solid state
Contacts configuration: SPST-NO
Control voltage: 1.2V DC
Control current max.: 25mA
Max. operating current: 150mA
Manufacturer series: PVA
On-state resistance: 24Ω
Mounting: SMT
Case: SMD8
Body dimensions: 9.39x6.47x3.93mm
Insulation voltage: 4kV
Kind of output: MOSFET
Operating temperature: -40...85°C
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Ucntrl: 1.2VDC; Icntrl max: 25mA; PVA
Type of relay: solid state
Contacts configuration: SPST-NO
Control voltage: 1.2V DC
Control current max.: 25mA
Max. operating current: 150mA
Manufacturer series: PVA
On-state resistance: 24Ω
Mounting: SMT
Case: SMD8
Body dimensions: 9.39x6.47x3.93mm
Insulation voltage: 4kV
Kind of output: MOSFET
Operating temperature: -40...85°C
auf Bestellung 100 Stücke:
Lieferzeit 14-21 Tag (e)
| S80KS2564GACHV040 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 200MHz; 35ns; FBGA24; -40÷105°C
Kind of memory: DRAM
Type of integrated circuit: DRAM memory
Case: FBGA24
Interface: HyperBus
Kind of package: in-tray
Mounting: SMD
Operating temperature: -40...105°C
Access time: 35ns
Supply voltage: 1.7...2V DC
Clock frequency: 200MHz
Memory: 256Mb DRAM
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 200MHz; 35ns; FBGA24; -40÷105°C
Kind of memory: DRAM
Type of integrated circuit: DRAM memory
Case: FBGA24
Interface: HyperBus
Kind of package: in-tray
Mounting: SMD
Operating temperature: -40...105°C
Access time: 35ns
Supply voltage: 1.7...2V DC
Clock frequency: 200MHz
Memory: 256Mb DRAM
Produkt ist nicht verfügbar
Mindestbestellmenge: 260 Stücke
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| S80KS2562GABHI020 |
Hersteller: INFINEON TECHNOLOGIES
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 200MHz; 35ns; FBGA24; -40÷85°C; in-tray
Kind of memory: DRAM
Type of integrated circuit: DRAM memory
Case: FBGA24
Interface: HyperBus
Kind of package: in-tray
Mounting: SMD
Operating temperature: -40...85°C
Access time: 35ns
Supply voltage: 1.7...2V DC
Clock frequency: 200MHz
Memory: 256Mb DRAM
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 200MHz; 35ns; FBGA24; -40÷85°C; in-tray
Kind of memory: DRAM
Type of integrated circuit: DRAM memory
Case: FBGA24
Interface: HyperBus
Kind of package: in-tray
Mounting: SMD
Operating temperature: -40...85°C
Access time: 35ns
Supply voltage: 1.7...2V DC
Clock frequency: 200MHz
Memory: 256Mb DRAM
Produkt ist nicht verfügbar
Mindestbestellmenge: 338 Stücke
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| S80KS2562GABHB023 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 200MHz; 35ns; FBGA24; -40÷105°C
Kind of memory: DRAM
Type of integrated circuit: DRAM memory
Case: FBGA24
Interface: HyperBus
Kind of package: reel; tape
Mounting: SMD
Operating temperature: -40...105°C
Access time: 35ns
Supply voltage: 1.7...2V DC
Clock frequency: 200MHz
Memory: 256Mb DRAM
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 200MHz; 35ns; FBGA24; -40÷105°C
Kind of memory: DRAM
Type of integrated circuit: DRAM memory
Case: FBGA24
Interface: HyperBus
Kind of package: reel; tape
Mounting: SMD
Operating temperature: -40...105°C
Access time: 35ns
Supply voltage: 1.7...2V DC
Clock frequency: 200MHz
Memory: 256Mb DRAM
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
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Stück im Wert von UAH
| S80KS2563GABHI020 |
Hersteller: INFINEON TECHNOLOGIES
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 200MHz; 35ns; FBGA24; -40÷85°C; in-tray
Kind of memory: DRAM
Type of integrated circuit: DRAM memory
Case: FBGA24
Interface: HyperBus
Kind of package: in-tray
Mounting: SMD
Operating temperature: -40...85°C
Access time: 35ns
Supply voltage: 1.7...2V DC
Clock frequency: 200MHz
Memory: 256Mb DRAM
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 200MHz; 35ns; FBGA24; -40÷85°C; in-tray
Kind of memory: DRAM
Type of integrated circuit: DRAM memory
Case: FBGA24
Interface: HyperBus
Kind of package: in-tray
Mounting: SMD
Operating temperature: -40...85°C
Access time: 35ns
Supply voltage: 1.7...2V DC
Clock frequency: 200MHz
Memory: 256Mb DRAM
Produkt ist nicht verfügbar
Mindestbestellmenge: 338 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| S80KS2564GACHI040 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 200MHz; 35ns; FBGA24; -40÷85°C; in-tray
Kind of memory: DRAM
Type of integrated circuit: DRAM memory
Case: FBGA24
Interface: HyperBus
Kind of package: in-tray
Mounting: SMD
Operating temperature: -40...85°C
Access time: 35ns
Supply voltage: 1.7...2V DC
Clock frequency: 200MHz
Memory: 256Mb DRAM
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 200MHz; 35ns; FBGA24; -40÷85°C; in-tray
Kind of memory: DRAM
Type of integrated circuit: DRAM memory
Case: FBGA24
Interface: HyperBus
Kind of package: in-tray
Mounting: SMD
Operating temperature: -40...85°C
Access time: 35ns
Supply voltage: 1.7...2V DC
Clock frequency: 200MHz
Memory: 256Mb DRAM
Produkt ist nicht verfügbar
Mindestbestellmenge: 260 Stücke
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Stück im Wert von UAH
| S80KS2564GACHI043 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 200MHz; 35ns; FBGA24; -40÷85°C
Kind of memory: DRAM
Type of integrated circuit: DRAM memory
Case: FBGA24
Interface: HyperBus
Kind of package: reel; tape
Mounting: SMD
Operating temperature: -40...85°C
Access time: 35ns
Supply voltage: 1.7...2V DC
Clock frequency: 200MHz
Memory: 256Mb DRAM
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 200MHz; 35ns; FBGA24; -40÷85°C
Kind of memory: DRAM
Type of integrated circuit: DRAM memory
Case: FBGA24
Interface: HyperBus
Kind of package: reel; tape
Mounting: SMD
Operating temperature: -40...85°C
Access time: 35ns
Supply voltage: 1.7...2V DC
Clock frequency: 200MHz
Memory: 256Mb DRAM
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| S80KS2564GACHV043 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 200MHz; 35ns; FBGA24; -40÷105°C
Kind of memory: DRAM
Type of integrated circuit: DRAM memory
Case: FBGA24
Interface: HyperBus
Kind of package: reel; tape
Mounting: SMD
Operating temperature: -40...105°C
Access time: 35ns
Supply voltage: 1.7...2V DC
Clock frequency: 200MHz
Memory: 256Mb DRAM
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 200MHz; 35ns; FBGA24; -40÷105°C
Kind of memory: DRAM
Type of integrated circuit: DRAM memory
Case: FBGA24
Interface: HyperBus
Kind of package: reel; tape
Mounting: SMD
Operating temperature: -40...105°C
Access time: 35ns
Supply voltage: 1.7...2V DC
Clock frequency: 200MHz
Memory: 256Mb DRAM
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
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Stück im Wert von UAH
| ITS4880R |
|
Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 0.625A; Ch: 8; N-Channel; SMD; BSSOP36
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 0.625A
Number of channels: 8
Kind of output: N-Channel
Mounting: SMD
Case: BSSOP36
Supply voltage: 11...45V DC
Technology: Industrial PROFET
On-state resistance: 0.15Ω
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 0.625A; Ch: 8; N-Channel; SMD; BSSOP36
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 0.625A
Number of channels: 8
Kind of output: N-Channel
Mounting: SMD
Case: BSSOP36
Supply voltage: 11...45V DC
Technology: Industrial PROFET
On-state resistance: 0.15Ω
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BSC059N04LSGATMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 62A; 50W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 62A
Power dissipation: 50W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 5.9mΩ
Mounting: SMD
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 62A; 50W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 62A
Power dissipation: 50W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 5.9mΩ
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
Mindestbestellmenge: 5000 Stücke
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Stück im Wert von UAH
| BSC016N06NSATMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 100A; 139W; PG-TDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 100A
Power dissipation: 139W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 1.6mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 100A; 139W; PG-TDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 100A
Power dissipation: 139W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 1.6mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™
Produkt ist nicht verfügbar
Mindestbestellmenge: 5000 Stücke
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| BTS3405G |
|
Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 0.35A; Ch: 2; N-Channel; SMD; HITFET®
Output current: 0.35A
Type of integrated circuit: power switch
Kind of output: N-Channel
Technology: HITFET®
Output voltage: 10V
Case: PG-DSO-8-25
Kind of integrated circuit: low-side
Number of channels: 2
On-state resistance: 0.35Ω
Mounting: SMD
Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 0.35A; Ch: 2; N-Channel; SMD; HITFET®
Output current: 0.35A
Type of integrated circuit: power switch
Kind of output: N-Channel
Technology: HITFET®
Output voltage: 10V
Case: PG-DSO-8-25
Kind of integrated circuit: low-side
Number of channels: 2
On-state resistance: 0.35Ω
Mounting: SMD
auf Bestellung 2050 Stücke:
Lieferzeit 14-21 Tag (e)
| CY8C4013SXI-400 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: CY8C4013SXI-400
Category: Infineon Technologies microcontrollers
Description: CY8C4013SXI-400
auf Bestellung 2716 Stücke:
Lieferzeit 14-21 Tag (e)
| BGS12SN6E6327XTSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: Analog multiplexers and switches
Description: IC: RF switch; SPDT; Ch: 2; TSNP6; 1.8÷3.5VDC; 0.1÷6GHz
Type of integrated circuit: RF switch
Output configuration: SPDT
Number of channels: 2
Case: TSNP6
Supply voltage: 1.8...3.5V DC
Mounting: SMD
Bandwidth: 0.1...6GHz
Application: telecommunication
Category: Analog multiplexers and switches
Description: IC: RF switch; SPDT; Ch: 2; TSNP6; 1.8÷3.5VDC; 0.1÷6GHz
Type of integrated circuit: RF switch
Output configuration: SPDT
Number of channels: 2
Case: TSNP6
Supply voltage: 1.8...3.5V DC
Mounting: SMD
Bandwidth: 0.1...6GHz
Application: telecommunication
Produkt ist nicht verfügbar
Mindestbestellmenge: 15000 Stücke
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| IRFR4615TRLPBF |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 33A; 144W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 33A
Power dissipation: 144W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 33A; 144W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 33A
Power dissipation: 144W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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| DD750S65K3NOSA1 |
Hersteller: INFINEON TECHNOLOGIES
Category: Diode modules
Description: Module: diode
Type of semiconductor module: diode
Category: Diode modules
Description: Module: diode
Type of semiconductor module: diode
Produkt ist nicht verfügbar
Mindestbestellmenge: 2 Stücke
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