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BAS40-07WH6327 Infineon Technologies INFNS19700-1.pdf?t.download=true&u=5oefqw Description: SCHOTTKY DIODE
Packaging: Bulk
Package / Case: SC-82A, SOT-343
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 120mA (DC)
Supplier Device Package: PG-SOT343-4
Operating Temperature - Junction: 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 40 mA
Current - Reverse Leakage @ Vr: 1 µA @ 30 V
Produkt ist nicht verfügbar
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BAS40-07E6327 BAS40-07E6327 Infineon Technologies INFNS11688-1.pdf?t.download=true&u=5oefqw Description: DIODE ARR SCHOT 40V 120MA SOT143
Packaging: Bulk
Package / Case: TO-253-4, TO-253AA
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 120mA (DC)
Supplier Device Package: SOT143 (SC-61)
Operating Temperature - Junction: 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 40 mA
Current - Reverse Leakage @ Vr: 1 µA @ 30 V
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IPU95R450P7AKMA1 IPU95R450P7AKMA1 Infineon Technologies Infineon-IPU95R450P7-DS-v02_00-EN.pdf?fileId=5546d462636cc8fb01643c5739505893 Description: MOSFET N-CH 950V 14A TO251-3
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10+5.48 EUR
100+4.4 EUR
500+3.62 EUR
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IFX1763LDVXUMA1 IFX1763LDVXUMA1 Infineon Technologies INFN-S-A0001171796-1.pdf?t.download=true&u=5oefqw Description: IC REG LIN POS ADJ 500MA TSON-10
Packaging: Cut Tape (CT)
Package / Case: 10-TFDFN Exposed Pad
Output Type: Adjustable
Mounting Type: Surface Mount
Current - Output: 500mA
Operating Temperature: -40°C ~ 125°C
Output Configuration: Positive
Current - Quiescent (Iq): 60 µA
Voltage - Input (Max): 20V
Number of Regulators: 1
Supplier Device Package: PG-TSON-10
Voltage - Output (Max): 20V
Voltage - Output (Min/Fixed): 1.22V
Control Features: Enable
Part Status: Obsolete
PSRR: 65dB (120Hz)
Voltage Dropout (Max): 0.45V @ 500mA
Protection Features: Over Current, Over Temperature, Reverse Polarity
Current - Supply (Max): 31 mA
Produkt ist nicht verfügbar
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IFX1763LDV33XUMA1 IFX1763LDV33XUMA1 Infineon Technologies INFN-S-A0001171796-1.pdf?t.download=true&u=5oefqw Description: IC REG LIN 3.3V 500MA PG-TSON-10
Packaging: Tape & Reel (TR)
Package / Case: 10-TFDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 500mA
Operating Temperature: -40°C ~ 125°C
Output Configuration: Positive
Current - Quiescent (Iq): 60 µA
Voltage - Input (Max): 20V
Number of Regulators: 1
Supplier Device Package: PG-TSON-10
Voltage - Output (Min/Fixed): 3.3V
Control Features: Enable
Part Status: Obsolete
PSRR: 65dB (120Hz)
Voltage Dropout (Max): 0.45V @ 500mA
Protection Features: Over Current, Over Temperature, Reverse Polarity
Current - Supply (Max): 31 mA
Produkt ist nicht verfügbar
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IPA60R190C6 IPA60R190C6 Infineon Technologies INFN-S-A0004583470-1.pdf?t.download=true&u=5oefqw Description: POWER FIELD-EFFECT TRANSISTOR, 2
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20.2A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 9.5A, 10V
Power Dissipation (Max): 34W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 630µA
Supplier Device Package: PG-TO220-3-111
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 100 V
Produkt ist nicht verfügbar
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TLE9461ESXUMA1 TLE9461ESXUMA1 Infineon Technologies Infineon-TLE9461ES-DS-v01_00-EN.pdf?fileId=5546d46264fee02f016519d670a2371c Description: IC SYST BASIS CHIP TSDSO-24-1
Packaging: Cut Tape (CT)
Package / Case: 24-TSSOP (0.154", 3.90mm Width) Exposed Pad
Mounting Type: Surface Mount
Type: System Basis Chip (SBC)
Applications: CAN
Supplier Device Package: PG-TSDSO-24-1
Grade: Automotive
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
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10+3.46 EUR
25+3.17 EUR
100+2.85 EUR
250+2.7 EUR
500+2.61 EUR
1000+2.53 EUR
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2ED020I12FA Infineon Technologies Description: 2ED020 - GATE DRIVER
Packaging: Bulk
Package / Case: 36-BSSOP (0.433", 11.00mm Width) Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 13V ~ 20V
Input Type: Inverting, Non-Inverting
High Side Voltage - Max (Bootstrap): 1200 V
Supplier Device Package: PG-DSO-36
Rise / Fall Time (Typ): 30ns, 50ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, N-Channel, P-Channel MOSFET
Logic Voltage - VIL, VIH: 1.5V, 3.5V
Current - Peak Output (Source, Sink): 2.4A, 2.4A
Part Status: Active
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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IGW60T120 IGW60T120 Infineon Technologies INFNS14054-1.pdf?t.download=true&u=5oefqw Description: IGW60T120 - DISCRETE IGBT WITHOU
Produkt ist nicht verfügbar
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BAT165E6327 Infineon Technologies Description: BAT165 - RECTIFIER DIODE, SCHOTT
Packaging: Bulk
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 12pF @ 10V, 1MHz
Current - Average Rectified (Io): 750mA
Supplier Device Package: PG-SOD323-2
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 740 mV @ 750 mA
Produkt ist nicht verfügbar
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BAT165 Infineon Technologies Description: DIODE SCHOTT 40V 750MA SOD323-2
Packaging: Bulk
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 12pF @ 10V, 1MHz
Current - Average Rectified (Io): 750mA
Supplier Device Package: PG-SOD323-2
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 740 mV @ 750 mA
Produkt ist nicht verfügbar
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REFICL5102U52WCCTOBO1 REFICL5102U52WCCTOBO1 Infineon Technologies Infineon-EngineeringReport_REF_ICL5102_U52W_CC-ApplicationNotes-v01_00-EN.pdf?fileId=5546d46272e49d2a017357acca0b3f23 Description: EVAL KIT
Packaging: Bulk
Voltage - Output: 20V ~ 52V
Voltage - Input: 198 ~ 256 VAC
Contents: Board(s)
Utilized IC / Part: ICL5102
Supplied Contents: Board(s)
Outputs and Type: 1 Non-Isolated Output
Part Status: Active
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IPP60R060P7 Infineon Technologies INFN-S-A0003370844-1.pdf?t.download=true&u=5oefqw Description: 600V, 0.06OHM, N-CHANNEL MOSFET,
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 48A (Tc)
Rds On (Max) @ Id, Vgs: 60mOhm @ 15.9A, 10V
Power Dissipation (Max): 164W (Tc)
Vgs(th) (Max) @ Id: 4V @ 800µA
Supplier Device Package: PG-TO220-3-123
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 67 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2895 pF @ 400 V
Produkt ist nicht verfügbar
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IKFW75N65EH5XKSA1 IKFW75N65EH5XKSA1 Infineon Technologies Infineon-IKFW75N65EH5-DataSheet-v02_01-EN.pdf?fileId=5546d46274cf54d50174d972d5b51efd Description: IGBT TRENCH FS 650V 80A HSIP247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 75 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 60A
Supplier Device Package: PG-HSIP247-3-2
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 30ns/206ns
Switching Energy: 1.8mJ (on), 600µJ (off)
Test Condition: 400V, 60A, 12Ohm, 15V
Gate Charge: 144 nC
Part Status: Active
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 240 A
Power - Max: 148 W
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IKFW75N65ES5XKSA1 IKFW75N65ES5XKSA1 Infineon Technologies Infineon-IKFW75N65ES5-DataSheet-v02_01-EN.pdf?fileId=5546d46274cf54d50174d972e4191f00 Description: IGBT TRENCH FS 650V 80A HSIP247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 71 ns
Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 60A
Supplier Device Package: PG-HSIP247-3-2
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 24ns/152ns
Switching Energy: 1.48mJ (on), 660µJ (off)
Test Condition: 400V, 60A, 8Ohm, 15V
Gate Charge: 144 nC
Part Status: Active
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 240 A
Power - Max: 148 W
Produkt ist nicht verfügbar
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IKZ75N65NH5 Infineon Technologies INFN-S-A0000024566-1.pdf?t.download=true&u=5oefqw Description: IKZ75N65 - DISCRETE IGBT WITH AN
Packaging: Bulk
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 59 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 75A
Supplier Device Package: PG-TO247-4-1
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 52ns/412ns
Switching Energy: 880µJ (on), 520µJ (off)
Test Condition: 400V, 37.5A, 27Ohm, 15V
Gate Charge: 166 nC
Part Status: Active
Current - Collector (Ic) (Max): 90 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 300 A
Power - Max: 395 W
Produkt ist nicht verfügbar
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BSP50E6327 BSP50E6327 Infineon Technologies INFNS10800-1.pdf?t.download=true&u=5oefqw Description: TRANS NPN DARL 45V 1A SOT223-4
Packaging: Bulk
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: NPN - Darlington
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.8V @ 1mA, 1A
Current - Collector Cutoff (Max): 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 2000 @ 500mA, 10V
Frequency - Transition: 200MHz
Supplier Device Package: PG-SOT223-4
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 1.5 W
Produkt ist nicht verfügbar
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IAUC120N06S5L032ATMA1 IAUC120N06S5L032ATMA1 Infineon Technologies Infineon-IAUC120N06S5L032-DataSheet-v01_00-EN.pdf?fileId=5546d46271bf4f920171f468428461b1 Description: MOSFET N-CH 60V 120A TDSON-8-34
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tj)
Rds On (Max) @ Id, Vgs: 3.2mOhm @ 60A, 10V
Power Dissipation (Max): 94W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 44µA
Supplier Device Package: PG-TDSON-8-34
Grade: Automotive
Part Status: Active
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 51.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3823 pF @ 30 V
Qualification: AEC-Q101
auf Bestellung 40000 Stücke:
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5000+0.78 EUR
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IAUC120N06S5L032ATMA1 IAUC120N06S5L032ATMA1 Infineon Technologies Infineon-IAUC120N06S5L032-DataSheet-v01_00-EN.pdf?fileId=5546d46271bf4f920171f468428461b1 Description: MOSFET N-CH 60V 120A TDSON-8-34
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tj)
Rds On (Max) @ Id, Vgs: 3.2mOhm @ 60A, 10V
Power Dissipation (Max): 94W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 44µA
Supplier Device Package: PG-TDSON-8-34
Grade: Automotive
Part Status: Active
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 51.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3823 pF @ 30 V
Qualification: AEC-Q101
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6+2.96 EUR
10+1.88 EUR
100+1.27 EUR
500+1.01 EUR
1000+0.94 EUR
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IPD040N03LG IPD040N03LG Infineon Technologies INFNS16968-1.pdf?t.download=true&u=5oefqw Description: OPTLMOS N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 30A, 10V
Power Dissipation (Max): 79W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: PG-TO252-3-11
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3900 pF @ 15 V
Produkt ist nicht verfügbar
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IPD40N03S4L08ATMA1 IPD40N03S4L08ATMA1 Infineon Technologies Infineon-IPD40N03S4L_08-DS-v01_01-en.pdf?fileId=db3a30431ddc9372011e2b3ad6c04d78 Description: MOSFET N-CH 30V 40A TO252-31
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 8.3mOhm @ 40A, 10V
Power Dissipation (Max): 42W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 13µA
Supplier Device Package: PG-TO252-3-11
Grade: Automotive
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1520 pF @ 15 V
Qualification: AEC-Q101
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IPB240N03S4LR9ATMA1 IPB240N03S4LR9ATMA1 Infineon Technologies Infineon-IPB240N03S4L-R9-DS-v01_01-EN.pdf?fileId=5546d46249a28d750149a36984b60479 Description: MOSFET N-CH 30V 240A TO263-7
Packaging: Bulk
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 240A (Tc)
Rds On (Max) @ Id, Vgs: 0.92mOhm @ 100A, 10V
Power Dissipation (Max): 231W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 180µA
Supplier Device Package: PG-TO263-7-3
Grade: Automotive
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 300 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 20300 pF @ 25 V
Qualification: AEC-Q101
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CY90911ASPMC-GS-111E1 CY90911ASPMC-GS-111E1 Infineon Technologies download Description: IC MCU 16BIT 64KB MROM 48LQFP
Packaging: Tray
Package / Case: 48-LQFP
Mounting Type: Surface Mount
Speed: 32MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 4K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External
Program Memory Type: Mask ROM
Core Processor: F²MC-16LX
Data Converters: A/D 16x8/10b
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Connectivity: CANbus, LINbus, UART/USART
Peripherals: POR, WDT
Supplier Device Package: 48-LQFP (7x7)
Number of I/O: 36
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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IRFR5505TRLPBF IRFR5505TRLPBF Infineon Technologies irfr5505pbf.pdf?fileId=5546d462533600a4015356358535210f Description: MOSFET P-CH 55V 18A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 110mOhm @ 9.6A, 10V
Power Dissipation (Max): 57W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Part Status: Last Time Buy
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 650 pF @ 25 V
Produkt ist nicht verfügbar
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IRFR5505TRLPBF IRFR5505TRLPBF Infineon Technologies irfr5505pbf.pdf?fileId=5546d462533600a4015356358535210f Description: MOSFET P-CH 55V 18A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 110mOhm @ 9.6A, 10V
Power Dissipation (Max): 57W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Part Status: Last Time Buy
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 650 pF @ 25 V
Produkt ist nicht verfügbar
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HYB25L512160AC-7.5 HYB25L512160AC-7.5 Infineon Technologies INFNS06572-1.pdf?t.download=true&u=5oefqw Description: IC DRAM 512MBIT PARALLEL 54FBGA
Packaging: Bulk
Package / Case: 54-LFBGA
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TC)
Voltage - Supply: 2.3V ~ 3.6V
Technology: SDRAM - Mobile LPDDR
Clock Frequency: 133 MHz
Memory Format: DRAM
Supplier Device Package: 54-FBGA (8x12)
Part Status: Active
Write Cycle Time - Word, Page: 14ns
Memory Interface: Parallel
Access Time: 6 ns
Memory Organization: 32M x 16
Produkt ist nicht verfügbar
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HYB25L512160AC-7.5 REEL Infineon Technologies INFNS06572-1.pdf?t.download=true&u=5oefqw Description: IC DRAM 512MBIT PARALLEL 54FBGA
Packaging: Bulk
Package / Case: 54-LFBGA
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TC)
Voltage - Supply: 2.3V ~ 3.6V
Technology: SDRAM - Mobile LPDDR
Clock Frequency: 133 MHz
Memory Format: DRAM
Supplier Device Package: 54-FBGA (8x12)
Part Status: Active
Write Cycle Time - Word, Page: 14ns
Memory Interface: Parallel
Access Time: 6 ns
Memory Organization: 32M x 16
Produkt ist nicht verfügbar
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IPB70N10S3L12ATMA1 IPB70N10S3L12ATMA1 Infineon Technologies Infineon-IPP_B_I70N10S3L-DS-v01_02-en.pdf?folderId=db3a3043156fd5730115c7d50620107c&fileId=db3a30431a5c32f2011a907bea255942&ack=t Description: MOSFET N-CH 100V 70A TO263-3
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Rds On (Max) @ Id, Vgs: 11.8mOhm @ 70A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 83µA
Supplier Device Package: PG-TO263-3-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5550 pF @ 25 V
auf Bestellung 14000 Stücke:
Lieferzeit 10-14 Tag (e)
1000+1.94 EUR
Mindestbestellmenge: 1000
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IPB70N10S3L12ATMA1 IPB70N10S3L12ATMA1 Infineon Technologies Infineon-IPP_B_I70N10S3L-DS-v01_02-en.pdf?folderId=db3a3043156fd5730115c7d50620107c&fileId=db3a30431a5c32f2011a907bea255942&ack=t Description: MOSFET N-CH 100V 70A TO263-3
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Rds On (Max) @ Id, Vgs: 11.8mOhm @ 70A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 83µA
Supplier Device Package: PG-TO263-3-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5550 pF @ 25 V
auf Bestellung 19969 Stücke:
Lieferzeit 10-14 Tag (e)
4+5.77 EUR
10+3.78 EUR
100+2.64 EUR
500+2.16 EUR
Mindestbestellmenge: 4
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BSC070N10NS5SCATMA1 BSC070N10NS5SCATMA1 Infineon Technologies Infineon-BSC070N10NS5SC-DataSheet-v02_00-EN.pdf?fileId=5546d462712ef9b701712f7de4910086 Description: MOSFET N-CH 100V 14A/82A 8SWSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 82A (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 40A, 10V
Power Dissipation (Max): 3W (Ta), 100W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 50µA
Supplier Device Package: PG-WSON-8-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2700 pF @ 50 V
auf Bestellung 12000 Stücke:
Lieferzeit 10-14 Tag (e)
4000+1.46 EUR
Mindestbestellmenge: 4000
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BSC070N10NS5SCATMA1 BSC070N10NS5SCATMA1 Infineon Technologies Infineon-BSC070N10NS5SC-DataSheet-v02_00-EN.pdf?fileId=5546d462712ef9b701712f7de4910086 Description: MOSFET N-CH 100V 14A/82A 8SWSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 82A (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 40A, 10V
Power Dissipation (Max): 3W (Ta), 100W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 50µA
Supplier Device Package: PG-WSON-8-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2700 pF @ 50 V
auf Bestellung 14217 Stücke:
Lieferzeit 10-14 Tag (e)
4+4.45 EUR
10+3.06 EUR
100+2.12 EUR
500+1.79 EUR
Mindestbestellmenge: 4
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BSC070N10LS5ATMA1 BSC070N10LS5ATMA1 Infineon Technologies Infineon-BSC070N10LS5-DataSheet-v02_00-EN.pdf?fileId=5546d4626bb628d7016bdc41b1c2214d Description: MOSFET N-CH 100V 14A/79A TDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 79A (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 40A, 10V
Power Dissipation (Max): 2.5W (Ta), 83W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 49µA
Supplier Device Package: PG-TDSON-8-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2700 pF @ 50 V
Produkt ist nicht verfügbar
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BSC070N10LS5ATMA1 BSC070N10LS5ATMA1 Infineon Technologies Infineon-BSC070N10LS5-DataSheet-v02_00-EN.pdf?fileId=5546d4626bb628d7016bdc41b1c2214d Description: MOSFET N-CH 100V 14A/79A TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 79A (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 40A, 10V
Power Dissipation (Max): 2.5W (Ta), 83W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 49µA
Supplier Device Package: PG-TDSON-8-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2700 pF @ 50 V
auf Bestellung 3992 Stücke:
Lieferzeit 10-14 Tag (e)
6+2.97 EUR
10+2.28 EUR
25+2.05 EUR
100+1.78 EUR
250+1.63 EUR
500+1.53 EUR
1000+1.44 EUR
Mindestbestellmenge: 6
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BBY5502VH6327XTSA1 BBY5502VH6327XTSA1 Infineon Technologies INFNS15716-1.pdf?t.download=true&u=5oefqw Description: DIODE VARACTOR 16V SGL SC79-2
Packaging: Cut Tape (CT)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Diode Type: Single
Operating Temperature: -55°C ~ 150°C (TJ)
Capacitance @ Vr, F: 6.5pF @ 10V, 1MHz
Capacitance Ratio Condition: C2/C10
Supplier Device Package: PG-SC79-2
Voltage - Peak Reverse (Max): 16 V
Capacitance Ratio: 3.0
auf Bestellung 16820 Stücke:
Lieferzeit 10-14 Tag (e)
34+0.53 EUR
54+0.33 EUR
100+0.32 EUR
Mindestbestellmenge: 34
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IPD90N06S407ATMA2 IPD90N06S407ATMA2 Infineon Technologies Infineon-IPD90N06S4_07-DS-v01_00-en.pdf?fileId=db3a30431ff988150120386e3b5b0c87 Description: MOSFET N-CH 60V 90A TO252-31
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 6.9mOhm @ 90A, 10V
Power Dissipation (Max): 79W (Tc)
Vgs(th) (Max) @ Id: 4V @ 40µA
Supplier Device Package: PG-TO252-3-11
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Qualification: AEC-Q101
auf Bestellung 35000 Stücke:
Lieferzeit 10-14 Tag (e)
2500+0.7 EUR
Mindestbestellmenge: 2500
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IPD90N06S407ATMA2 IPD90N06S407ATMA2 Infineon Technologies Infineon-IPD90N06S4_07-DS-v01_00-en.pdf?fileId=db3a30431ff988150120386e3b5b0c87 Description: MOSFET N-CH 60V 90A TO252-31
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 6.9mOhm @ 90A, 10V
Power Dissipation (Max): 79W (Tc)
Vgs(th) (Max) @ Id: 4V @ 40µA
Supplier Device Package: PG-TO252-3-11
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Qualification: AEC-Q101
auf Bestellung 39270 Stücke:
Lieferzeit 10-14 Tag (e)
19+0.95 EUR
20+0.9 EUR
100+0.86 EUR
Mindestbestellmenge: 19
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IPD90N06S4L-05 Infineon Technologies INFNS14111-1.pdf?t.download=true&u=5oefqw Description: IPD90N06 - 55V-60V N-CHANNEL AUT
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 4.6mOhm @ 90A, 10V
Power Dissipation (Max): 107W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 60µA
Supplier Device Package: PG-TO252-3-11
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8180 pF @ 25 V
Produkt ist nicht verfügbar
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IPI90N06S4L04AKSA2 IPI90N06S4L04AKSA2 Infineon Technologies Infineon-I90N06S4L_04-DS-v01_00-en.pdf?fileId=db3a30431ff98815012038d111570ce3 Description: MOSFET N-CH 60V 90A TO262-3
Packaging: Bulk
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 3.7mOhm @ 90A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 90µA
Supplier Device Package: PG-TO262-3-1
Grade: Automotive
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13000 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 46914 Stücke:
Lieferzeit 10-14 Tag (e)
221+2.1 EUR
Mindestbestellmenge: 221
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IPW60R125P6 Infineon Technologies INFNS30506-1.pdf?t.download=true&u=5oefqw Description: POWER FIELD-EFFECT TRANSISTOR
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 125mOhm @ 11.6A, 10V
Power Dissipation (Max): 219W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 960µA
Supplier Device Package: PG-TO247-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2660 pF @ 100 V
Produkt ist nicht verfügbar
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IPP60R125C6 IPP60R125C6 Infineon Technologies INFN-S-A0004583435-1.pdf?t.download=true&u=5oefqw Description: POWER FIELD-EFFECT TRANSISTOR, 3
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 125mOhm @ 14.5A, 10V
Power Dissipation (Max): 219W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 960µA
Supplier Device Package: PG-TO220-3-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 96 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2127 pF @ 100 V
Produkt ist nicht verfügbar
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SP000685844 SP000685844 Infineon Technologies INFN-S-A0004583435-1.pdf?t.download=true&u=5oefqw Description: IPP60R125C6XKSA1 - COOLMOS N-CHA
Produkt ist nicht verfügbar
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IPI60R125CP IPI60R125CP Infineon Technologies INFNS16994-1.pdf?t.download=true&u=5oefqw Description: 25A, 600V, 0.125OHM, N-CHANNEL M
Packaging: Bulk
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Rds On (Max) @ Id, Vgs: 125mOhm @ 16A, 10V
Power Dissipation (Max): 208W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 1.1mA
Supplier Device Package: PG-TO262-3-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 100 V
Produkt ist nicht verfügbar
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IPA60R125CP IPA60R125CP Infineon Technologies INFNS15802-1.pdf?t.download=true&u=5oefqw Description: POWER FIELD-EFFECT TRANSISTOR, 2
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Rds On (Max) @ Id, Vgs: 125mOhm @ 16A, 10V
Power Dissipation (Max): 35W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 1.1mA
Supplier Device Package: PG-TO220-3-31
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 100 V
Produkt ist nicht verfügbar
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IPP60R125CP IPP60R125CP Infineon Technologies INFNS15863-1.pdf?t.download=true&u=5oefqw Description: POWER FIELD-EFFECT TRANSISTOR, 2
Produkt ist nicht verfügbar
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IPW60R125CP IPW60R125CP Infineon Technologies INFNS16489-1.pdf?t.download=true&u=5oefqw Description: 25A, 600V, 0.125OHM, N-CHANNEL M
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Rds On (Max) @ Id, Vgs: 125mOhm @ 16A, 10V
Power Dissipation (Max): 208W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 1.1mA
Supplier Device Package: PG-TO247-3-21
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 100 V
Produkt ist nicht verfügbar
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IPP60R190C6 IPP60R190C6 Infineon Technologies INFN-S-A0004583470-1.pdf?t.download=true&u=5oefqw Description: POWER FIELD-EFFECT TRANSISTOR, 2
Produkt ist nicht verfügbar
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SP000660618 SP000660618 Infineon Technologies Infineon-IPI60R190C6-DS-v02_02-EN.pdf?fileId=db3a30432239cccd0122650f87c6114d Description: IPI60R190C6XKSA1 - COOLMOS N-CHA
Packaging: Bulk
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20.2A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 9.5A, 10V
Power Dissipation (Max): 151W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 630µA
Supplier Device Package: PG-TO262-3-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 100 V
Produkt ist nicht verfügbar
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SP000797380 SP000797380 Infineon Technologies INFN-S-A0003614948-1.pdf?t.download=true&u=5oefqw Description: IPA60R190E6XKSA1 - POWER FIELD-E
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20.2A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 9.5A, 10V
Power Dissipation (Max): 34W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 630µA
Supplier Device Package: PG-TO220-3-111
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 100 V
Produkt ist nicht verfügbar
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IPW60R190P6 IPW60R190P6 Infineon Technologies INFN-S-A0001301528-1.pdf?t.download=true&u=5oefqw Description: MOSFET N-CH 600V 20.2A TO247
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IPW60R190E6 IPW60R190E6 Infineon Technologies Infineon-IPW60R190E6-DS-v02_04-EN.pdf?fileId=db3a3043284aacd801286cadc33a2932 Description: 600V, 0.19OHM, N-CHANNEL MOSFET,
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20.2A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 9.5A, 10V
Power Dissipation (Max): 151W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 630µA
Supplier Device Package: PG-TO247-3-41
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 100 V
Produkt ist nicht verfügbar
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TLE4251D TLE4251D Infineon Technologies Infineon-TLE4251-DS-v02_90-EN.pdf?fileId=5546d46259d9a4bf0159f918181239ff Description: TLE4251 - LINEAR VOLTAGE REGULAT
Packaging: Bulk
Package / Case: TO-252-5, DPak (4 Leads + Tab), TO-252AD
Output Type: Adjustable
Mounting Type: Surface Mount
Current - Output: 400mA
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 300 µA
Voltage - Input (Max): 40V
Number of Regulators: 1
Supplier Device Package: PG-TO252-5-11
Voltage - Output (Max): 40V
Voltage - Output (Min/Fixed): Tracking
Control Features: Enable
Part Status: Active
PSRR: 60dB (100Hz)
Voltage Dropout (Max): 0.52V @ 300mA
Protection Features: Over Current, Over Temperature, Reverse Polarity, Short Circuit
Current - Supply (Max): 20 mA
Produkt ist nicht verfügbar
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IKW15T120 IKW15T120 Infineon Technologies INFNS27300-1.pdf?t.download=true&u=5oefqw description Description: IKW15T120 - DISCRETE IGBT WITH A
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 140 ns
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 15A
Supplier Device Package: PG-TO247-3-21
IGBT Type: NPT, Trench Field Stop
Td (on/off) @ 25°C: 50ns/520ns
Switching Energy: 1.3mJ (on), 1.4mJ (off)
Test Condition: 600V, 15A, 56Ohm, 15V
Gate Charge: 85 nC
Part Status: Active
Current - Collector (Ic) (Max): 30 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 45 A
Power - Max: 110 W
Produkt ist nicht verfügbar
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IPI100N10S305AKSA1 IPI100N10S305AKSA1 Infineon Technologies Infineon-IPP_B_I100N10S3-DS-v01_00-en.pdf?folderId=db3a3043156fd5730115c7d50620107c&fileId=db3a30431a5c32f2011a908bd4d8595c&ack=t Description: MOSFET N-CH 100V 100A TO262-3
Packaging: Bulk
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 5.1mOhm @ 100A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 240µA
Supplier Device Package: PG-TO262-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 176 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11570 pF @ 25 V
auf Bestellung 19500 Stücke:
Lieferzeit 10-14 Tag (e)
160+3.15 EUR
Mindestbestellmenge: 160
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IKU10N60RXK IKU10N60RXK Infineon Technologies INFNS16819-1.pdf?t.download=true&u=5oefqw Description: INSULATED GATE BIPOLAR TRANSISTO
Packaging: Bulk
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 62 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 10A
Supplier Device Package: PG-TO-251-3-341
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 14ns/192ns
Switching Energy: 210µJ (on), 380µJ (off)
Test Condition: 400V, 10A, 23Ohm, 15V
Gate Charge: 64 nC
Part Status: Active
Current - Collector (Ic) (Max): 20 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 30 A
Power - Max: 150 W
Produkt ist nicht verfügbar
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IKD10N60RF IKD10N60RF Infineon Technologies INFN-S-A0004163151-1.pdf?t.download=true&u=5oefqw Description: IKD10N60 - DISCRETE IGBT WITH AN
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 72 ns
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 10A
Supplier Device Package: PG-TO252-3-313
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 12ns/168ns
Switching Energy: 190µJ (on), 160µJ (off)
Test Condition: 400V, 10A, 26Ohm, 15V
Gate Charge: 64 nC
Part Status: Active
Current - Collector (Ic) (Max): 20 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 30 A
Power - Max: 150 W
Produkt ist nicht verfügbar
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BAS40-04E6327 BAS40-04E6327 Infineon Technologies INFNS11688-1.pdf?t.download=true&u=5oefqw Description: BAS40 - HIGH SPEED SWITCHING, CL
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 120mA (DC)
Supplier Device Package: PG-SOT23-3-11
Operating Temperature - Junction: 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 40 mA
Current - Reverse Leakage @ Vr: 1 µA @ 30 V
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TLS115D0EJXUMA1 TLS115D0EJXUMA1 Infineon Technologies Infineon-TLS115D0EJ-DataSheet-v01_11-EN.pdf?fileId=5546d46279cccfdb0179ce5faaf26d95 Description: IC REG LINEAR POS ADJ 8DSO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Output Type: Adjustable
Mounting Type: Surface Mount
Current - Output: 150mA
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 90 µA
Voltage - Input (Max): 45V
Number of Regulators: 1
Supplier Device Package: PG-DSO-8
Voltage - Output (Max): 14V
Voltage - Output (Min/Fixed): 2V
Control Features: Enable, Power Good
Grade: Automotive
Part Status: Active
PSRR: 85dB (100Hz)
Voltage Dropout (Max): 0.5V @ 150mA
Protection Features: Over Temperature, Reverse Polarity, Short Circuit
Current - Supply (Max): 14 mA
Qualification: AEC-Q100
auf Bestellung 2500 Stücke:
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2500+1.48 EUR
Mindestbestellmenge: 2500
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TLS115D0EJXUMA1 TLS115D0EJXUMA1 Infineon Technologies Infineon-TLS115D0EJ-DataSheet-v01_11-EN.pdf?fileId=5546d46279cccfdb0179ce5faaf26d95 Description: IC REG LINEAR POS ADJ 8DSO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Output Type: Adjustable
Mounting Type: Surface Mount
Current - Output: 150mA
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 90 µA
Voltage - Input (Max): 45V
Number of Regulators: 1
Supplier Device Package: PG-DSO-8
Voltage - Output (Max): 14V
Voltage - Output (Min/Fixed): 2V
Control Features: Enable, Power Good
Grade: Automotive
Part Status: Active
PSRR: 85dB (100Hz)
Voltage Dropout (Max): 0.5V @ 150mA
Protection Features: Over Temperature, Reverse Polarity, Short Circuit
Current - Supply (Max): 14 mA
Qualification: AEC-Q100
auf Bestellung 5430 Stücke:
Lieferzeit 10-14 Tag (e)
6+2.96 EUR
10+2.17 EUR
25+1.97 EUR
100+1.75 EUR
250+1.65 EUR
500+1.59 EUR
1000+1.54 EUR
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IPI80P03P4-05AKSA1 Infineon Technologies Description: P-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 5mOhm @ 80A, 10V
Power Dissipation (Max): 137W (Tc)
Vgs(th) (Max) @ Id: 4V @ 253µA
Supplier Device Package: PG-TO262-3-1
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10300 pF @ 25 V
auf Bestellung 2596 Stücke:
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378+1.39 EUR
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IPB80P03P4-05ATMA1 IPB80P03P4-05ATMA1 Infineon Technologies INFNS13097-1.pdf?t.download=true&u=5oefqw Description: P-CHANNEL POWER MOSFET
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BAS40-07WH6327 INFNS19700-1.pdf?t.download=true&u=5oefqw
Hersteller: Infineon Technologies
Description: SCHOTTKY DIODE
Packaging: Bulk
Package / Case: SC-82A, SOT-343
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 120mA (DC)
Supplier Device Package: PG-SOT343-4
Operating Temperature - Junction: 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 40 mA
Current - Reverse Leakage @ Vr: 1 µA @ 30 V
Produkt ist nicht verfügbar
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BAS40-07E6327 INFNS11688-1.pdf?t.download=true&u=5oefqw
BAS40-07E6327
Hersteller: Infineon Technologies
Description: DIODE ARR SCHOT 40V 120MA SOT143
Packaging: Bulk
Package / Case: TO-253-4, TO-253AA
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 120mA (DC)
Supplier Device Package: SOT143 (SC-61)
Operating Temperature - Junction: 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 40 mA
Current - Reverse Leakage @ Vr: 1 µA @ 30 V
auf Bestellung 760249 Stücke:
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Anzahl Preis
2500+0.19 EUR
Mindestbestellmenge: 2500
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IPU95R450P7AKMA1 Infineon-IPU95R450P7-DS-v02_00-EN.pdf?fileId=5546d462636cc8fb01643c5739505893
IPU95R450P7AKMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 950V 14A TO251-3
auf Bestellung 972 Stücke:
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Anzahl Preis
3+6.09 EUR
10+5.48 EUR
100+4.4 EUR
500+3.62 EUR
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IFX1763LDVXUMA1 INFN-S-A0001171796-1.pdf?t.download=true&u=5oefqw
IFX1763LDVXUMA1
Hersteller: Infineon Technologies
Description: IC REG LIN POS ADJ 500MA TSON-10
Packaging: Cut Tape (CT)
Package / Case: 10-TFDFN Exposed Pad
Output Type: Adjustable
Mounting Type: Surface Mount
Current - Output: 500mA
Operating Temperature: -40°C ~ 125°C
Output Configuration: Positive
Current - Quiescent (Iq): 60 µA
Voltage - Input (Max): 20V
Number of Regulators: 1
Supplier Device Package: PG-TSON-10
Voltage - Output (Max): 20V
Voltage - Output (Min/Fixed): 1.22V
Control Features: Enable
Part Status: Obsolete
PSRR: 65dB (120Hz)
Voltage Dropout (Max): 0.45V @ 500mA
Protection Features: Over Current, Over Temperature, Reverse Polarity
Current - Supply (Max): 31 mA
Produkt ist nicht verfügbar
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IFX1763LDV33XUMA1 INFN-S-A0001171796-1.pdf?t.download=true&u=5oefqw
IFX1763LDV33XUMA1
Hersteller: Infineon Technologies
Description: IC REG LIN 3.3V 500MA PG-TSON-10
Packaging: Tape & Reel (TR)
Package / Case: 10-TFDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 500mA
Operating Temperature: -40°C ~ 125°C
Output Configuration: Positive
Current - Quiescent (Iq): 60 µA
Voltage - Input (Max): 20V
Number of Regulators: 1
Supplier Device Package: PG-TSON-10
Voltage - Output (Min/Fixed): 3.3V
Control Features: Enable
Part Status: Obsolete
PSRR: 65dB (120Hz)
Voltage Dropout (Max): 0.45V @ 500mA
Protection Features: Over Current, Over Temperature, Reverse Polarity
Current - Supply (Max): 31 mA
Produkt ist nicht verfügbar
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IPA60R190C6 INFN-S-A0004583470-1.pdf?t.download=true&u=5oefqw
IPA60R190C6
Hersteller: Infineon Technologies
Description: POWER FIELD-EFFECT TRANSISTOR, 2
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20.2A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 9.5A, 10V
Power Dissipation (Max): 34W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 630µA
Supplier Device Package: PG-TO220-3-111
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 100 V
Produkt ist nicht verfügbar
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TLE9461ESXUMA1 Infineon-TLE9461ES-DS-v01_00-EN.pdf?fileId=5546d46264fee02f016519d670a2371c
TLE9461ESXUMA1
Hersteller: Infineon Technologies
Description: IC SYST BASIS CHIP TSDSO-24-1
Packaging: Cut Tape (CT)
Package / Case: 24-TSSOP (0.154", 3.90mm Width) Exposed Pad
Mounting Type: Surface Mount
Type: System Basis Chip (SBC)
Applications: CAN
Supplier Device Package: PG-TSDSO-24-1
Grade: Automotive
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
auf Bestellung 9714 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+4.61 EUR
10+3.46 EUR
25+3.17 EUR
100+2.85 EUR
250+2.7 EUR
500+2.61 EUR
1000+2.53 EUR
Mindestbestellmenge: 4
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2ED020I12FA
Hersteller: Infineon Technologies
Description: 2ED020 - GATE DRIVER
Packaging: Bulk
Package / Case: 36-BSSOP (0.433", 11.00mm Width) Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 13V ~ 20V
Input Type: Inverting, Non-Inverting
High Side Voltage - Max (Bootstrap): 1200 V
Supplier Device Package: PG-DSO-36
Rise / Fall Time (Typ): 30ns, 50ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, N-Channel, P-Channel MOSFET
Logic Voltage - VIL, VIH: 1.5V, 3.5V
Current - Peak Output (Source, Sink): 2.4A, 2.4A
Part Status: Active
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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IGW60T120 INFNS14054-1.pdf?t.download=true&u=5oefqw
IGW60T120
Hersteller: Infineon Technologies
Description: IGW60T120 - DISCRETE IGBT WITHOU
Produkt ist nicht verfügbar
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BAT165E6327
Hersteller: Infineon Technologies
Description: BAT165 - RECTIFIER DIODE, SCHOTT
Packaging: Bulk
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 12pF @ 10V, 1MHz
Current - Average Rectified (Io): 750mA
Supplier Device Package: PG-SOD323-2
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 740 mV @ 750 mA
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BAT165
Hersteller: Infineon Technologies
Description: DIODE SCHOTT 40V 750MA SOD323-2
Packaging: Bulk
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 12pF @ 10V, 1MHz
Current - Average Rectified (Io): 750mA
Supplier Device Package: PG-SOD323-2
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 740 mV @ 750 mA
Produkt ist nicht verfügbar
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REFICL5102U52WCCTOBO1 Infineon-EngineeringReport_REF_ICL5102_U52W_CC-ApplicationNotes-v01_00-EN.pdf?fileId=5546d46272e49d2a017357acca0b3f23
REFICL5102U52WCCTOBO1
Hersteller: Infineon Technologies
Description: EVAL KIT
Packaging: Bulk
Voltage - Output: 20V ~ 52V
Voltage - Input: 198 ~ 256 VAC
Contents: Board(s)
Utilized IC / Part: ICL5102
Supplied Contents: Board(s)
Outputs and Type: 1 Non-Isolated Output
Part Status: Active
auf Bestellung 3 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+188.16 EUR
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IPP60R060P7 INFN-S-A0003370844-1.pdf?t.download=true&u=5oefqw
Hersteller: Infineon Technologies
Description: 600V, 0.06OHM, N-CHANNEL MOSFET,
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 48A (Tc)
Rds On (Max) @ Id, Vgs: 60mOhm @ 15.9A, 10V
Power Dissipation (Max): 164W (Tc)
Vgs(th) (Max) @ Id: 4V @ 800µA
Supplier Device Package: PG-TO220-3-123
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 67 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2895 pF @ 400 V
Produkt ist nicht verfügbar
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IKFW75N65EH5XKSA1 Infineon-IKFW75N65EH5-DataSheet-v02_01-EN.pdf?fileId=5546d46274cf54d50174d972d5b51efd
IKFW75N65EH5XKSA1
Hersteller: Infineon Technologies
Description: IGBT TRENCH FS 650V 80A HSIP247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 75 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 60A
Supplier Device Package: PG-HSIP247-3-2
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 30ns/206ns
Switching Energy: 1.8mJ (on), 600µJ (off)
Test Condition: 400V, 60A, 12Ohm, 15V
Gate Charge: 144 nC
Part Status: Active
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 240 A
Power - Max: 148 W
auf Bestellung 240 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+12.51 EUR
30+7.29 EUR
120+6.14 EUR
Mindestbestellmenge: 2
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IKFW75N65ES5XKSA1 Infineon-IKFW75N65ES5-DataSheet-v02_01-EN.pdf?fileId=5546d46274cf54d50174d972e4191f00
IKFW75N65ES5XKSA1
Hersteller: Infineon Technologies
Description: IGBT TRENCH FS 650V 80A HSIP247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 71 ns
Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 60A
Supplier Device Package: PG-HSIP247-3-2
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 24ns/152ns
Switching Energy: 1.48mJ (on), 660µJ (off)
Test Condition: 400V, 60A, 8Ohm, 15V
Gate Charge: 144 nC
Part Status: Active
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 240 A
Power - Max: 148 W
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IKZ75N65NH5 INFN-S-A0000024566-1.pdf?t.download=true&u=5oefqw
Hersteller: Infineon Technologies
Description: IKZ75N65 - DISCRETE IGBT WITH AN
Packaging: Bulk
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 59 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 75A
Supplier Device Package: PG-TO247-4-1
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 52ns/412ns
Switching Energy: 880µJ (on), 520µJ (off)
Test Condition: 400V, 37.5A, 27Ohm, 15V
Gate Charge: 166 nC
Part Status: Active
Current - Collector (Ic) (Max): 90 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 300 A
Power - Max: 395 W
Produkt ist nicht verfügbar
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BSP50E6327 INFNS10800-1.pdf?t.download=true&u=5oefqw
BSP50E6327
Hersteller: Infineon Technologies
Description: TRANS NPN DARL 45V 1A SOT223-4
Packaging: Bulk
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: NPN - Darlington
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.8V @ 1mA, 1A
Current - Collector Cutoff (Max): 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 2000 @ 500mA, 10V
Frequency - Transition: 200MHz
Supplier Device Package: PG-SOT223-4
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 1.5 W
Produkt ist nicht verfügbar
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IAUC120N06S5L032ATMA1 Infineon-IAUC120N06S5L032-DataSheet-v01_00-EN.pdf?fileId=5546d46271bf4f920171f468428461b1
IAUC120N06S5L032ATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 60V 120A TDSON-8-34
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tj)
Rds On (Max) @ Id, Vgs: 3.2mOhm @ 60A, 10V
Power Dissipation (Max): 94W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 44µA
Supplier Device Package: PG-TDSON-8-34
Grade: Automotive
Part Status: Active
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 51.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3823 pF @ 30 V
Qualification: AEC-Q101
auf Bestellung 40000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5000+0.78 EUR
Mindestbestellmenge: 5000
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IAUC120N06S5L032ATMA1 Infineon-IAUC120N06S5L032-DataSheet-v01_00-EN.pdf?fileId=5546d46271bf4f920171f468428461b1
IAUC120N06S5L032ATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 60V 120A TDSON-8-34
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tj)
Rds On (Max) @ Id, Vgs: 3.2mOhm @ 60A, 10V
Power Dissipation (Max): 94W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 44µA
Supplier Device Package: PG-TDSON-8-34
Grade: Automotive
Part Status: Active
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 51.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3823 pF @ 30 V
Qualification: AEC-Q101
auf Bestellung 41547 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
6+2.96 EUR
10+1.88 EUR
100+1.27 EUR
500+1.01 EUR
1000+0.94 EUR
Mindestbestellmenge: 6
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IPD040N03LG INFNS16968-1.pdf?t.download=true&u=5oefqw
IPD040N03LG
Hersteller: Infineon Technologies
Description: OPTLMOS N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 30A, 10V
Power Dissipation (Max): 79W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: PG-TO252-3-11
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3900 pF @ 15 V
Produkt ist nicht verfügbar
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IPD40N03S4L08ATMA1 Infineon-IPD40N03S4L_08-DS-v01_01-en.pdf?fileId=db3a30431ddc9372011e2b3ad6c04d78
IPD40N03S4L08ATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 30V 40A TO252-31
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 8.3mOhm @ 40A, 10V
Power Dissipation (Max): 42W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 13µA
Supplier Device Package: PG-TO252-3-11
Grade: Automotive
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1520 pF @ 15 V
Qualification: AEC-Q101
auf Bestellung 9247 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
328+1.37 EUR
Mindestbestellmenge: 328
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IPB240N03S4LR9ATMA1 Infineon-IPB240N03S4L-R9-DS-v01_01-EN.pdf?fileId=5546d46249a28d750149a36984b60479
IPB240N03S4LR9ATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 30V 240A TO263-7
Packaging: Bulk
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 240A (Tc)
Rds On (Max) @ Id, Vgs: 0.92mOhm @ 100A, 10V
Power Dissipation (Max): 231W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 180µA
Supplier Device Package: PG-TO263-7-3
Grade: Automotive
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 300 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 20300 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 21485 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
93+4.89 EUR
Mindestbestellmenge: 93
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CY90911ASPMC-GS-111E1 download
CY90911ASPMC-GS-111E1
Hersteller: Infineon Technologies
Description: IC MCU 16BIT 64KB MROM 48LQFP
Packaging: Tray
Package / Case: 48-LQFP
Mounting Type: Surface Mount
Speed: 32MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 4K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External
Program Memory Type: Mask ROM
Core Processor: F²MC-16LX
Data Converters: A/D 16x8/10b
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Connectivity: CANbus, LINbus, UART/USART
Peripherals: POR, WDT
Supplier Device Package: 48-LQFP (7x7)
Number of I/O: 36
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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IRFR5505TRLPBF irfr5505pbf.pdf?fileId=5546d462533600a4015356358535210f
IRFR5505TRLPBF
Hersteller: Infineon Technologies
Description: MOSFET P-CH 55V 18A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 110mOhm @ 9.6A, 10V
Power Dissipation (Max): 57W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Part Status: Last Time Buy
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 650 pF @ 25 V
Produkt ist nicht verfügbar
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IRFR5505TRLPBF irfr5505pbf.pdf?fileId=5546d462533600a4015356358535210f
IRFR5505TRLPBF
Hersteller: Infineon Technologies
Description: MOSFET P-CH 55V 18A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 110mOhm @ 9.6A, 10V
Power Dissipation (Max): 57W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Part Status: Last Time Buy
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 650 pF @ 25 V
Produkt ist nicht verfügbar
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HYB25L512160AC-7.5 INFNS06572-1.pdf?t.download=true&u=5oefqw
HYB25L512160AC-7.5
Hersteller: Infineon Technologies
Description: IC DRAM 512MBIT PARALLEL 54FBGA
Packaging: Bulk
Package / Case: 54-LFBGA
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TC)
Voltage - Supply: 2.3V ~ 3.6V
Technology: SDRAM - Mobile LPDDR
Clock Frequency: 133 MHz
Memory Format: DRAM
Supplier Device Package: 54-FBGA (8x12)
Part Status: Active
Write Cycle Time - Word, Page: 14ns
Memory Interface: Parallel
Access Time: 6 ns
Memory Organization: 32M x 16
Produkt ist nicht verfügbar
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HYB25L512160AC-7.5 REEL INFNS06572-1.pdf?t.download=true&u=5oefqw
Hersteller: Infineon Technologies
Description: IC DRAM 512MBIT PARALLEL 54FBGA
Packaging: Bulk
Package / Case: 54-LFBGA
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TC)
Voltage - Supply: 2.3V ~ 3.6V
Technology: SDRAM - Mobile LPDDR
Clock Frequency: 133 MHz
Memory Format: DRAM
Supplier Device Package: 54-FBGA (8x12)
Part Status: Active
Write Cycle Time - Word, Page: 14ns
Memory Interface: Parallel
Access Time: 6 ns
Memory Organization: 32M x 16
Produkt ist nicht verfügbar
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IPB70N10S3L12ATMA1 Infineon-IPP_B_I70N10S3L-DS-v01_02-en.pdf?folderId=db3a3043156fd5730115c7d50620107c&fileId=db3a30431a5c32f2011a907bea255942&ack=t
IPB70N10S3L12ATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 100V 70A TO263-3
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Rds On (Max) @ Id, Vgs: 11.8mOhm @ 70A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 83µA
Supplier Device Package: PG-TO263-3-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5550 pF @ 25 V
auf Bestellung 14000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1000+1.94 EUR
Mindestbestellmenge: 1000
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IPB70N10S3L12ATMA1 Infineon-IPP_B_I70N10S3L-DS-v01_02-en.pdf?folderId=db3a3043156fd5730115c7d50620107c&fileId=db3a30431a5c32f2011a907bea255942&ack=t
IPB70N10S3L12ATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 100V 70A TO263-3
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Rds On (Max) @ Id, Vgs: 11.8mOhm @ 70A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 83µA
Supplier Device Package: PG-TO263-3-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5550 pF @ 25 V
auf Bestellung 19969 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+5.77 EUR
10+3.78 EUR
100+2.64 EUR
500+2.16 EUR
Mindestbestellmenge: 4
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BSC070N10NS5SCATMA1 Infineon-BSC070N10NS5SC-DataSheet-v02_00-EN.pdf?fileId=5546d462712ef9b701712f7de4910086
BSC070N10NS5SCATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 100V 14A/82A 8SWSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 82A (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 40A, 10V
Power Dissipation (Max): 3W (Ta), 100W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 50µA
Supplier Device Package: PG-WSON-8-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2700 pF @ 50 V
auf Bestellung 12000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4000+1.46 EUR
Mindestbestellmenge: 4000
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BSC070N10NS5SCATMA1 Infineon-BSC070N10NS5SC-DataSheet-v02_00-EN.pdf?fileId=5546d462712ef9b701712f7de4910086
BSC070N10NS5SCATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 100V 14A/82A 8SWSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 82A (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 40A, 10V
Power Dissipation (Max): 3W (Ta), 100W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 50µA
Supplier Device Package: PG-WSON-8-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2700 pF @ 50 V
auf Bestellung 14217 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+4.45 EUR
10+3.06 EUR
100+2.12 EUR
500+1.79 EUR
Mindestbestellmenge: 4
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BSC070N10LS5ATMA1 Infineon-BSC070N10LS5-DataSheet-v02_00-EN.pdf?fileId=5546d4626bb628d7016bdc41b1c2214d
BSC070N10LS5ATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 100V 14A/79A TDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 79A (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 40A, 10V
Power Dissipation (Max): 2.5W (Ta), 83W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 49µA
Supplier Device Package: PG-TDSON-8-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2700 pF @ 50 V
Produkt ist nicht verfügbar
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BSC070N10LS5ATMA1 Infineon-BSC070N10LS5-DataSheet-v02_00-EN.pdf?fileId=5546d4626bb628d7016bdc41b1c2214d
BSC070N10LS5ATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 100V 14A/79A TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 79A (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 40A, 10V
Power Dissipation (Max): 2.5W (Ta), 83W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 49µA
Supplier Device Package: PG-TDSON-8-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2700 pF @ 50 V
auf Bestellung 3992 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
6+2.97 EUR
10+2.28 EUR
25+2.05 EUR
100+1.78 EUR
250+1.63 EUR
500+1.53 EUR
1000+1.44 EUR
Mindestbestellmenge: 6
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BBY5502VH6327XTSA1 INFNS15716-1.pdf?t.download=true&u=5oefqw
BBY5502VH6327XTSA1
Hersteller: Infineon Technologies
Description: DIODE VARACTOR 16V SGL SC79-2
Packaging: Cut Tape (CT)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Diode Type: Single
Operating Temperature: -55°C ~ 150°C (TJ)
Capacitance @ Vr, F: 6.5pF @ 10V, 1MHz
Capacitance Ratio Condition: C2/C10
Supplier Device Package: PG-SC79-2
Voltage - Peak Reverse (Max): 16 V
Capacitance Ratio: 3.0
auf Bestellung 16820 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
34+0.53 EUR
54+0.33 EUR
100+0.32 EUR
Mindestbestellmenge: 34
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IPD90N06S407ATMA2 Infineon-IPD90N06S4_07-DS-v01_00-en.pdf?fileId=db3a30431ff988150120386e3b5b0c87
IPD90N06S407ATMA2
Hersteller: Infineon Technologies
Description: MOSFET N-CH 60V 90A TO252-31
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 6.9mOhm @ 90A, 10V
Power Dissipation (Max): 79W (Tc)
Vgs(th) (Max) @ Id: 4V @ 40µA
Supplier Device Package: PG-TO252-3-11
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Qualification: AEC-Q101
auf Bestellung 35000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2500+0.7 EUR
Mindestbestellmenge: 2500
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IPD90N06S407ATMA2 Infineon-IPD90N06S4_07-DS-v01_00-en.pdf?fileId=db3a30431ff988150120386e3b5b0c87
IPD90N06S407ATMA2
Hersteller: Infineon Technologies
Description: MOSFET N-CH 60V 90A TO252-31
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 6.9mOhm @ 90A, 10V
Power Dissipation (Max): 79W (Tc)
Vgs(th) (Max) @ Id: 4V @ 40µA
Supplier Device Package: PG-TO252-3-11
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Qualification: AEC-Q101
auf Bestellung 39270 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
19+0.95 EUR
20+0.9 EUR
100+0.86 EUR
Mindestbestellmenge: 19
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IPD90N06S4L-05 INFNS14111-1.pdf?t.download=true&u=5oefqw
Hersteller: Infineon Technologies
Description: IPD90N06 - 55V-60V N-CHANNEL AUT
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 4.6mOhm @ 90A, 10V
Power Dissipation (Max): 107W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 60µA
Supplier Device Package: PG-TO252-3-11
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8180 pF @ 25 V
Produkt ist nicht verfügbar
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IPI90N06S4L04AKSA2 Infineon-I90N06S4L_04-DS-v01_00-en.pdf?fileId=db3a30431ff98815012038d111570ce3
IPI90N06S4L04AKSA2
Hersteller: Infineon Technologies
Description: MOSFET N-CH 60V 90A TO262-3
Packaging: Bulk
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 3.7mOhm @ 90A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 90µA
Supplier Device Package: PG-TO262-3-1
Grade: Automotive
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13000 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 46914 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
221+2.1 EUR
Mindestbestellmenge: 221
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IPW60R125P6 INFNS30506-1.pdf?t.download=true&u=5oefqw
Hersteller: Infineon Technologies
Description: POWER FIELD-EFFECT TRANSISTOR
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 125mOhm @ 11.6A, 10V
Power Dissipation (Max): 219W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 960µA
Supplier Device Package: PG-TO247-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2660 pF @ 100 V
Produkt ist nicht verfügbar
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IPP60R125C6 INFN-S-A0004583435-1.pdf?t.download=true&u=5oefqw
IPP60R125C6
Hersteller: Infineon Technologies
Description: POWER FIELD-EFFECT TRANSISTOR, 3
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 125mOhm @ 14.5A, 10V
Power Dissipation (Max): 219W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 960µA
Supplier Device Package: PG-TO220-3-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 96 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2127 pF @ 100 V
Produkt ist nicht verfügbar
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SP000685844 INFN-S-A0004583435-1.pdf?t.download=true&u=5oefqw
SP000685844
Hersteller: Infineon Technologies
Description: IPP60R125C6XKSA1 - COOLMOS N-CHA
Produkt ist nicht verfügbar
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IPI60R125CP INFNS16994-1.pdf?t.download=true&u=5oefqw
IPI60R125CP
Hersteller: Infineon Technologies
Description: 25A, 600V, 0.125OHM, N-CHANNEL M
Packaging: Bulk
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Rds On (Max) @ Id, Vgs: 125mOhm @ 16A, 10V
Power Dissipation (Max): 208W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 1.1mA
Supplier Device Package: PG-TO262-3-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 100 V
Produkt ist nicht verfügbar
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IPA60R125CP INFNS15802-1.pdf?t.download=true&u=5oefqw
IPA60R125CP
Hersteller: Infineon Technologies
Description: POWER FIELD-EFFECT TRANSISTOR, 2
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Rds On (Max) @ Id, Vgs: 125mOhm @ 16A, 10V
Power Dissipation (Max): 35W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 1.1mA
Supplier Device Package: PG-TO220-3-31
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 100 V
Produkt ist nicht verfügbar
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IPP60R125CP INFNS15863-1.pdf?t.download=true&u=5oefqw
IPP60R125CP
Hersteller: Infineon Technologies
Description: POWER FIELD-EFFECT TRANSISTOR, 2
Produkt ist nicht verfügbar
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IPW60R125CP INFNS16489-1.pdf?t.download=true&u=5oefqw
IPW60R125CP
Hersteller: Infineon Technologies
Description: 25A, 600V, 0.125OHM, N-CHANNEL M
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Rds On (Max) @ Id, Vgs: 125mOhm @ 16A, 10V
Power Dissipation (Max): 208W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 1.1mA
Supplier Device Package: PG-TO247-3-21
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 100 V
Produkt ist nicht verfügbar
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IPP60R190C6 INFN-S-A0004583470-1.pdf?t.download=true&u=5oefqw
IPP60R190C6
Hersteller: Infineon Technologies
Description: POWER FIELD-EFFECT TRANSISTOR, 2
Produkt ist nicht verfügbar
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SP000660618 Infineon-IPI60R190C6-DS-v02_02-EN.pdf?fileId=db3a30432239cccd0122650f87c6114d
SP000660618
Hersteller: Infineon Technologies
Description: IPI60R190C6XKSA1 - COOLMOS N-CHA
Packaging: Bulk
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20.2A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 9.5A, 10V
Power Dissipation (Max): 151W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 630µA
Supplier Device Package: PG-TO262-3-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 100 V
Produkt ist nicht verfügbar
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SP000797380 INFN-S-A0003614948-1.pdf?t.download=true&u=5oefqw
SP000797380
Hersteller: Infineon Technologies
Description: IPA60R190E6XKSA1 - POWER FIELD-E
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20.2A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 9.5A, 10V
Power Dissipation (Max): 34W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 630µA
Supplier Device Package: PG-TO220-3-111
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 100 V
Produkt ist nicht verfügbar
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IPW60R190P6 INFN-S-A0001301528-1.pdf?t.download=true&u=5oefqw
IPW60R190P6
Hersteller: Infineon Technologies
Description: MOSFET N-CH 600V 20.2A TO247
Produkt ist nicht verfügbar
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IPW60R190E6 Infineon-IPW60R190E6-DS-v02_04-EN.pdf?fileId=db3a3043284aacd801286cadc33a2932
IPW60R190E6
Hersteller: Infineon Technologies
Description: 600V, 0.19OHM, N-CHANNEL MOSFET,
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20.2A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 9.5A, 10V
Power Dissipation (Max): 151W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 630µA
Supplier Device Package: PG-TO247-3-41
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 100 V
Produkt ist nicht verfügbar
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TLE4251D Infineon-TLE4251-DS-v02_90-EN.pdf?fileId=5546d46259d9a4bf0159f918181239ff
TLE4251D
Hersteller: Infineon Technologies
Description: TLE4251 - LINEAR VOLTAGE REGULAT
Packaging: Bulk
Package / Case: TO-252-5, DPak (4 Leads + Tab), TO-252AD
Output Type: Adjustable
Mounting Type: Surface Mount
Current - Output: 400mA
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 300 µA
Voltage - Input (Max): 40V
Number of Regulators: 1
Supplier Device Package: PG-TO252-5-11
Voltage - Output (Max): 40V
Voltage - Output (Min/Fixed): Tracking
Control Features: Enable
Part Status: Active
PSRR: 60dB (100Hz)
Voltage Dropout (Max): 0.52V @ 300mA
Protection Features: Over Current, Over Temperature, Reverse Polarity, Short Circuit
Current - Supply (Max): 20 mA
Produkt ist nicht verfügbar
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IKW15T120 description INFNS27300-1.pdf?t.download=true&u=5oefqw
IKW15T120
Hersteller: Infineon Technologies
Description: IKW15T120 - DISCRETE IGBT WITH A
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 140 ns
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 15A
Supplier Device Package: PG-TO247-3-21
IGBT Type: NPT, Trench Field Stop
Td (on/off) @ 25°C: 50ns/520ns
Switching Energy: 1.3mJ (on), 1.4mJ (off)
Test Condition: 600V, 15A, 56Ohm, 15V
Gate Charge: 85 nC
Part Status: Active
Current - Collector (Ic) (Max): 30 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 45 A
Power - Max: 110 W
Produkt ist nicht verfügbar
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IPI100N10S305AKSA1 Infineon-IPP_B_I100N10S3-DS-v01_00-en.pdf?folderId=db3a3043156fd5730115c7d50620107c&fileId=db3a30431a5c32f2011a908bd4d8595c&ack=t
IPI100N10S305AKSA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 100V 100A TO262-3
Packaging: Bulk
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 5.1mOhm @ 100A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 240µA
Supplier Device Package: PG-TO262-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 176 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11570 pF @ 25 V
auf Bestellung 19500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
160+3.15 EUR
Mindestbestellmenge: 160
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IKU10N60RXK INFNS16819-1.pdf?t.download=true&u=5oefqw
IKU10N60RXK
Hersteller: Infineon Technologies
Description: INSULATED GATE BIPOLAR TRANSISTO
Packaging: Bulk
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 62 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 10A
Supplier Device Package: PG-TO-251-3-341
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 14ns/192ns
Switching Energy: 210µJ (on), 380µJ (off)
Test Condition: 400V, 10A, 23Ohm, 15V
Gate Charge: 64 nC
Part Status: Active
Current - Collector (Ic) (Max): 20 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 30 A
Power - Max: 150 W
Produkt ist nicht verfügbar
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IKD10N60RF INFN-S-A0004163151-1.pdf?t.download=true&u=5oefqw
IKD10N60RF
Hersteller: Infineon Technologies
Description: IKD10N60 - DISCRETE IGBT WITH AN
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 72 ns
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 10A
Supplier Device Package: PG-TO252-3-313
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 12ns/168ns
Switching Energy: 190µJ (on), 160µJ (off)
Test Condition: 400V, 10A, 26Ohm, 15V
Gate Charge: 64 nC
Part Status: Active
Current - Collector (Ic) (Max): 20 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 30 A
Power - Max: 150 W
Produkt ist nicht verfügbar
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BAS40-04E6327 INFNS11688-1.pdf?t.download=true&u=5oefqw
BAS40-04E6327
Hersteller: Infineon Technologies
Description: BAS40 - HIGH SPEED SWITCHING, CL
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 120mA (DC)
Supplier Device Package: PG-SOT23-3-11
Operating Temperature - Junction: 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 40 mA
Current - Reverse Leakage @ Vr: 1 µA @ 30 V
Produkt ist nicht verfügbar
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TLS115D0EJXUMA1 Infineon-TLS115D0EJ-DataSheet-v01_11-EN.pdf?fileId=5546d46279cccfdb0179ce5faaf26d95
TLS115D0EJXUMA1
Hersteller: Infineon Technologies
Description: IC REG LINEAR POS ADJ 8DSO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Output Type: Adjustable
Mounting Type: Surface Mount
Current - Output: 150mA
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 90 µA
Voltage - Input (Max): 45V
Number of Regulators: 1
Supplier Device Package: PG-DSO-8
Voltage - Output (Max): 14V
Voltage - Output (Min/Fixed): 2V
Control Features: Enable, Power Good
Grade: Automotive
Part Status: Active
PSRR: 85dB (100Hz)
Voltage Dropout (Max): 0.5V @ 150mA
Protection Features: Over Temperature, Reverse Polarity, Short Circuit
Current - Supply (Max): 14 mA
Qualification: AEC-Q100
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2500+1.48 EUR
Mindestbestellmenge: 2500
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TLS115D0EJXUMA1 Infineon-TLS115D0EJ-DataSheet-v01_11-EN.pdf?fileId=5546d46279cccfdb0179ce5faaf26d95
TLS115D0EJXUMA1
Hersteller: Infineon Technologies
Description: IC REG LINEAR POS ADJ 8DSO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Output Type: Adjustable
Mounting Type: Surface Mount
Current - Output: 150mA
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 90 µA
Voltage - Input (Max): 45V
Number of Regulators: 1
Supplier Device Package: PG-DSO-8
Voltage - Output (Max): 14V
Voltage - Output (Min/Fixed): 2V
Control Features: Enable, Power Good
Grade: Automotive
Part Status: Active
PSRR: 85dB (100Hz)
Voltage Dropout (Max): 0.5V @ 150mA
Protection Features: Over Temperature, Reverse Polarity, Short Circuit
Current - Supply (Max): 14 mA
Qualification: AEC-Q100
auf Bestellung 5430 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
6+2.96 EUR
10+2.17 EUR
25+1.97 EUR
100+1.75 EUR
250+1.65 EUR
500+1.59 EUR
1000+1.54 EUR
Mindestbestellmenge: 6
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IPI80P03P4-05AKSA1
Hersteller: Infineon Technologies
Description: P-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 5mOhm @ 80A, 10V
Power Dissipation (Max): 137W (Tc)
Vgs(th) (Max) @ Id: 4V @ 253µA
Supplier Device Package: PG-TO262-3-1
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10300 pF @ 25 V
auf Bestellung 2596 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
378+1.39 EUR
Mindestbestellmenge: 378
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IPB80P03P4-05ATMA1 INFNS13097-1.pdf?t.download=true&u=5oefqw
IPB80P03P4-05ATMA1
Hersteller: Infineon Technologies
Description: P-CHANNEL POWER MOSFET
Produkt ist nicht verfügbar
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