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BCR555 BCR555 Infineon Technologies INFNS17202-1.pdf?t.download=true&u=5oefqw Description: BIPOLAR DIGITAL TRANSISTOR
Packaging: Bulk
Part Status: Active
Produkt ist nicht verfügbar
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SN7002W E6433 SN7002W E6433 Infineon Technologies SN7002W_Rev2.5_pdf%5B1%5D.pdf?folderId=db3a3043156fd573011622e10b5c1f67&fileId=db3a3043344adb9d0134569a59ab6195&ack=t Description: MOSFET N-CH 60V 230MA SOT323-3
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 230mA (Ta)
Rds On (Max) @ Id, Vgs: 5Ohm @ 230mA, 10V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 1.8V @ 26µA
Supplier Device Package: PG-SOT323
Grade: Automotive
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 1.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 45 pF @ 25 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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SN7002W L6327 SN7002W L6327 Infineon Technologies SN7002W_Rev2.5_pdf%5B1%5D.pdf?folderId=db3a3043156fd573011622e10b5c1f67&fileId=db3a3043344adb9d0134569a59ab6195&ack=t Description: MOSFET N-CH 60V 230MA SOT323-3
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 230mA (Ta)
Rds On (Max) @ Id, Vgs: 5Ohm @ 230mA, 10V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 1.8V @ 26µA
Supplier Device Package: PG-SOT323
Grade: Automotive
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 1.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 45 pF @ 25 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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SN7002W L6433 SN7002W L6433 Infineon Technologies SN7002W_Rev2.5_pdf%5B1%5D.pdf?folderId=db3a3043156fd573011622e10b5c1f67&fileId=db3a3043344adb9d0134569a59ab6195&ack=t Description: MOSFET N-CH 60V 230MA SOT323-3
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 230mA (Ta)
Rds On (Max) @ Id, Vgs: 5Ohm @ 230mA, 10V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 1.8V @ 26µA
Supplier Device Package: PG-SOT323
Grade: Automotive
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 1.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 45 pF @ 25 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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BTM7710G BTM7710G Infineon Technologies INFNS12358-1.pdf?t.download=true&u=5oefqw Description: INTEGRATED FULL-BRIDGE DRIVER
Features: Slew Rate Controlled, Status Flag
Packaging: Bulk
Package / Case: 28-SOIC (0.295", 7.50mm Width)
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 4
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 70mOhm
Input Type: Non-Inverting
Voltage - Load: 1.8V ~ 42V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 8A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-DSO-28-22
Fault Protection: Open Load Detect, Over Temperature, Short Circuit, UVLO
Part Status: Obsolete
Produkt ist nicht verfügbar
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BTM7710GPXT Infineon Technologies INFNS12734-1.pdf?t.download=true&u=5oefqw Description: BTM7710 - INTEGRATED FULL-BRIDGE
Features: Slew Rate Controlled, Status Flag
Packaging: Bulk
Package / Case: 28-SOIC (0.295", 7.50mm Width)
Output Type: N/P-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 110mOhm
Input Type: Non-Inverting
Voltage - Load: 1.8V ~ 42V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 7A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-DSO-28-22
Fault Protection: Open Load Detect, Over Temperature, Short Circuit, UVLO
Part Status: Active
Produkt ist nicht verfügbar
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IRAM538-1065AE Infineon Technologies Description: POWER DRIVE MODULE DIP
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IRAM538-1065AS Infineon Technologies Description: POWER DRIVE MODULE DIP
Packaging: Tube
Mounting Type: Through Hole
Type: IGBT
Configuration: 3 Phase
Current: 10 A
Voltage: 600 V
Produkt ist nicht verfügbar
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FP100R12KT4PBPSA1 FP100R12KT4PBPSA1 Infineon Technologies Description: MOD IGBT LOW PWR ECONO3-3
Packaging: Bulk
auf Bestellung 139 Stücke:
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FP100R12KT4PBPSA1 FP100R12KT4PBPSA1 Infineon Technologies Description: MOD IGBT LOW PWR ECONO3-3
Packaging: Tray
Produkt ist nicht verfügbar
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SP001434884 SP001434884 Infineon Technologies Infineon-IPN60R1K0CE-DS-v02_00-EN.pdf?fileId=5546d46253f6505701547aed24095b21 Description: IPN60R1K0CEATMA1 - MOSFET
Packaging: Bulk
Package / Case: TO-261-3
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.8A (Tc)
Rds On (Max) @ Id, Vgs: 1Ohm @ 1.5A, 10V
Power Dissipation (Max): 5W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 130µA
Supplier Device Package: PG-SOT223
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 280 pF @ 100 V
Produkt ist nicht verfügbar
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BSZ042N04NSGATMA1 BSZ042N04NSGATMA1 Infineon Technologies INFNS30160-1.pdf?t.download=true&u=5oefqw Description: MOSFET N-CH 40V 40A TSDSON-8
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SAA-CIC61508-OSRF5VAA SAA-CIC61508-OSRF5VAA Infineon Technologies INFNS15458-1.pdf?t.download=true&u=5oefqw Description: IC SUPERVISOR PWR SUP SUPPORT
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BSC059N04LS6ATMA1 BSC059N04LS6ATMA1 Infineon Technologies Infineon-BSC059N04LS6-DS-v02_00-EN.pdf?fileId=5546d462689a790c0168bd22cfc6481f Description: MOSFET N-CH 40V 17A TDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 49A (Tc), 59A (Tc)
Rds On (Max) @ Id, Vgs: 5.9mOhm @ 50A, 10V
Power Dissipation (Max): 3W (Ta), 38W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: PG-TDSON-8-6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 9.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 830 pF @ 20 V
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5000+0.49 EUR
10000+0.47 EUR
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BSC059N04LS6ATMA1 BSC059N04LS6ATMA1 Infineon Technologies Infineon-BSC059N04LS6-DS-v02_00-EN.pdf?fileId=5546d462689a790c0168bd22cfc6481f Description: MOSFET N-CH 40V 17A TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 49A (Tc), 59A (Tc)
Rds On (Max) @ Id, Vgs: 5.9mOhm @ 50A, 10V
Power Dissipation (Max): 3W (Ta), 38W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: PG-TDSON-8-6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 9.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 830 pF @ 20 V
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9+2.04 EUR
14+1.29 EUR
100+0.86 EUR
500+0.67 EUR
1000+0.61 EUR
2000+0.57 EUR
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TT120N16SOFHPSA1 TT120N16SOFHPSA1 Infineon Technologies Infineon-TT120N-DS-v03_04-EN.pdf?fileId=5546d46148a8bbb90148d04e762d2e47 Description: SCR MODULE 1.6V 190A MODULE
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 130°C
Structure: Series Connection - All SCRs
Current - Hold (Ih) (Max): 250 mA
Current - Gate Trigger (Igt) (Max): 100 mA
Number of SCRs, Diodes: 2 SCRs
Current - On State (It (AV)) (Max): 119 A
Voltage - Gate Trigger (Vgt) (Max): 2.5 V
Current - On State (It (RMS)) (Max): 190 A
Voltage - Off State: 1.6 kV
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1+55.56 EUR
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BSL314PEH6327XTSA1 BSL314PEH6327XTSA1 Infineon Technologies BSL314PE.pdf Description: BSL314 - DUAL CHANNEL, SMALL SIN
auf Bestellung 2166 Stücke:
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TLS202A1MBVHTMA1 TLS202A1MBVHTMA1 Infineon Technologies Infineon-TLS202A1MBV-DS-v01_00-EN.pdf?fileId=5546d46258fc0bc1015969d30cbf4211 Description: IC REG LINEAR POS ADJ SCT595-5
Packaging: Bulk
Package / Case: 6-SMD (5 Leads), Gull Wing
Output Type: Adjustable
Mounting Type: Surface Mount
Current - Output: 150mA
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 75 µA
Voltage - Input (Max): 18V
Number of Regulators: 1
Supplier Device Package: PG-SCT595-5-1
Voltage - Output (Max): 5.25V
Voltage - Output (Min/Fixed): 1.2V
Grade: Automotive
Part Status: Not For New Designs
PSRR: 65dB (10kHz)
Voltage Dropout (Max): 1V @ 150mA
Protection Features: Over Current, Over Temperature, Short Circuit
Current - Supply (Max): 200 µA
Qualification: AEC-Q100
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375+1.21 EUR
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DEMOBOARDTLS202A1TOBO1 DEMOBOARDTLS202A1TOBO1 Infineon Technologies Infineon-TLS202A1_Demoboard_Manual-UserManual-v01_00-EN.pdf?fileId=5546d46261d5e6820161e7590f83400b Description: EVAL BOARD FOR TLS202A1
Packaging: Box
Voltage - Output: 3.3V
Voltage - Input: 2.7V ~ 18V
Current - Output: 150mA
Contents: Board(s)
Regulator Type: Positive Adjustable
Board Type: Fully Populated
Utilized IC / Part: TLS202A1
Supplied Contents: Board(s)
Channels per IC: 1 - Single
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1+87.4 EUR
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BAS40-05W BAS40-05W Infineon Technologies INFNS19700-1.pdf?t.download=true&u=5oefqw Description: DIODE ARR SCHOT 40V 120MA SOT323
Packaging: Bulk
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 120mA (DC)
Supplier Device Package: PG-SOT323-3
Operating Temperature - Junction: 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 40 mA
Current - Reverse Leakage @ Vr: 1 µA @ 30 V
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BAS40-05E6327 BAS40-05E6327 Infineon Technologies INFNS11688-1.pdf?t.download=true&u=5oefqw Description: BAS40 - HIGH SPEED SWITCHING, CL
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 120mA (DC)
Supplier Device Package: PG-SOT23-3-11
Operating Temperature - Junction: 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 40 mA
Current - Reverse Leakage @ Vr: 1 µA @ 30 V
Produkt ist nicht verfügbar
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BFP183-E7764 Infineon Technologies INFNS30056-1.pdf?t.download=true&u=5oefqw Description: RF BIPOLAR TRANSISTOR
Packaging: Bulk
Package / Case: TO-253-4, TO-253AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 22dB
Power - Max: 250mW
Current - Collector (Ic) (Max): 65mA
Voltage - Collector Emitter Breakdown (Max): 12V
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 15mA, 8V
Frequency - Transition: 8GHz
Noise Figure (dB Typ @ f): 0.9dB ~ 1.4dB @ 900MHz ~ 1.8GHz
Supplier Device Package: PG-SOT143-4
Part Status: Active
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BFP183E7764 BFP183E7764 Infineon Technologies INFNS30056-1.pdf?t.download=true&u=5oefqw Description: RF BIPOLAR TRANSISTOR
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BFP 183 E7764 Infineon Technologies INFNS30056-1.pdf?t.download=true&u=5oefqw Description: RF BIPOLAR TRANSISTOR
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BFP183WH6327 BFP183WH6327 Infineon Technologies INFNS10806-1.pdf?t.download=true&u=5oefqw Description: RF TRANSISTOR, L BAND, NPN
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BFP183WE6327 BFP183WE6327 Infineon Technologies INFNS10806-1.pdf?t.download=true&u=5oefqw Description: RF TRANSISTOR, L BAND, NPN
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BFP183 BFP183 Infineon Technologies INFNS30056-1.pdf?t.download=true&u=5oefqw Description: BFP183 - LOW-NOISE SI TRANSISTOR
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BFP 181 E7764 BFP 181 E7764 Infineon Technologies INFNS27310-1.pdf?t.download=true&u=5oefqw Description: RF TRANSISTOR, L BAND, NPN
Packaging: Bulk
Package / Case: TO-253-4, TO-253AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 17.5dB ~ 21dB
Power - Max: 175mW
Current - Collector (Ic) (Max): 20mA
Voltage - Collector Emitter Breakdown (Max): 12V
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 70mA, 8V
Frequency - Transition: 8GHz
Noise Figure (dB Typ @ f): 0.9dB ~ 1.2dB @ 900MHz ~ 1.8GHz
Supplier Device Package: PG-SOT-143-3D
Part Status: Active
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4480+0.12 EUR
Mindestbestellmenge: 4480
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BFP181E7764 Infineon Technologies INFNS27310-1.pdf?t.download=true&u=5oefqw Description: RF TRANSISTOR, L BAND, NPN
Packaging: Bulk
Package / Case: TO-253-4, TO-253AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 21dB
Power - Max: 175mW
Current - Collector (Ic) (Max): 20mA
Voltage - Collector Emitter Breakdown (Max): 12V
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 70mA, 8V
Frequency - Transition: 8GHz
Noise Figure (dB Typ @ f): 0.9dB ~ 1.2dB @ 900MHz ~ 1.8GHz
Supplier Device Package: PG-SOT143-4
Part Status: Active
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BFP182WH6327XTSA1 BFP182WH6327XTSA1 Infineon Technologies INFNS10735-1.pdf?t.download=true&u=5oefqw Description: RF TRANS NPN 12V 8GHZ PG-SOT-343
Packaging: Cut Tape (CT)
Package / Case: SC-82A, SOT-343
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 22dB
Power - Max: 250mW
Current - Collector (Ic) (Max): 35mA
Voltage - Collector Emitter Breakdown (Max): 12V
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 8V
Frequency - Transition: 8GHz
Noise Figure (dB Typ @ f): 0.9dB ~ 1.3dB @ 900MHz ~ 1.8GHz
Supplier Device Package: PG-SOT343-3D
auf Bestellung 8081 Stücke:
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42+0.42 EUR
61+0.29 EUR
69+0.26 EUR
100+0.22 EUR
250+0.2 EUR
500+0.19 EUR
1000+0.18 EUR
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BFP193E6327 BFP193E6327 Infineon Technologies INFNS19215-1.pdf?t.download=true&u=5oefqw Description: BFP193 - HIGH LINEARITY SI- AND
Packaging: Bulk
Package / Case: TO-253-4, TO-253AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 18dB
Power - Max: 580mW
Current - Collector (Ic) (Max): 80mA
Voltage - Collector Emitter Breakdown (Max): 12V
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 30mA, 8V
Frequency - Transition: 8GHz
Noise Figure (dB Typ @ f): 1dB ~ 1.6dB @ 900MHz ~ 1.8GHz
Supplier Device Package: SOT143 (SC-61)
Part Status: Active
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3355+0.16 EUR
Mindestbestellmenge: 3355
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IKFW60N65ES5XKSA1 IKFW60N65ES5XKSA1 Infineon Technologies Infineon-IKFW60N65ES5-DataSheet-v02_01-EN.pdf?fileId=5546d46274cf54d50174d97303931f06 Description: IGBT TRENCH FS 650V 77A HSIP247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 77 ns
Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 50A
Supplier Device Package: PG-HSIP247-3-2
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 20ns/127ns
Switching Energy: 1.23mJ (on), 550µJ (off)
Test Condition: 400V, 50A, 8.2Ohm, 15V
Gate Charge: 120 nC
Part Status: Active
Current - Collector (Ic) (Max): 77 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 200 A
Power - Max: 138 W
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2+11.79 EUR
30+6.84 EUR
120+5.76 EUR
Mindestbestellmenge: 2
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1ED44173N01BXTSA1 1ED44173N01BXTSA1 Infineon Technologies Infineon-1ED44173N01B-DataSheet-v01_00-EN.pdf?fileId=5546d46272aa54c00172bc99c2d45678 Description: IC GATE DRVR LOW-SIDE SOT23-6
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 8.6V ~ 20V
Input Type: Non-Inverting
Supplier Device Package: PG-SOT23-6-3
Rise / Fall Time (Typ): 5ns, 5ns
Channel Type: Single
Driven Configuration: Low-Side
Number of Drivers: 1
Gate Type: MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 1.2V, 1.9V
Current - Peak Output (Source, Sink): 2.6A, 2.6A
Part Status: Active
DigiKey Programmable: Not Verified
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3000+0.52 EUR
6000+0.51 EUR
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IPI60R385CP Infineon Technologies INFNS10204-1.pdf?t.download=true&u=5oefqw Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 385mOhm @ 5.2A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 340µA
Supplier Device Package: PG-TO262-3-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 790 pF @ 100 V
auf Bestellung 78346 Stücke:
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IPW50R190CE IPW50R190CE Infineon Technologies INFN-S-A0002262909-1.pdf?t.download=true&u=5oefqw Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24.8A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 6.2A, 13V
Power Dissipation (Max): 152W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 510µA
Supplier Device Package: PG-TO247-3-41
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 13V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 47.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1137 pF @ 100 V
Produkt ist nicht verfügbar
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BCR321UE6327 BCR321UE6327 Infineon Technologies INFN-S-A0000572132-1.pdf?t.download=true&u=5oefqw Description: BCR321 - LED DRIVER & ACTIVE BIA
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IRAMS10UP60C-2 Infineon Technologies Description: IRAMS10 - INTELLIGENT POWER MODU
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BGF117E6328 Infineon Technologies Description: MINI/MICROSD CARD ESD PROTECTION
Packaging: Bulk
auf Bestellung 27000 Stücke:
Lieferzeit 10-14 Tag (e)
1222+0.4 EUR
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IPL65R190E6AUMA1938 Infineon Technologies Infineon-IPL65R190E6-DS-v02_01-EN.pdf?fileId=db3a304344d727a80144df7870ce0c0c Description: IPL65R190 - 650V AND 700V COOLMO
Packaging: Bulk
Package / Case: 4-PowerTSFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20.2A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 7.3A, 10V
Power Dissipation (Max): 151W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 700µA
Supplier Device Package: PG-VSON-4-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 73 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1620 pF @ 100 V
Produkt ist nicht verfügbar
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IPA65R190C7 IPA65R190C7 Infineon Technologies INFNS30021-1.pdf?t.download=true&u=5oefqw Description: IPA65R190 - 650V AND 700V COOLMO
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 5.7A, 10V
Power Dissipation (Max): 30W (Tc)
Vgs(th) (Max) @ Id: 4V @ 290µA
Supplier Device Package: PG-TO220 Full Pack
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1150 pF @ 400 V
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IPP65R190C7 IPP65R190C7 Infineon Technologies INFNS27991-1.pdf?t.download=true&u=5oefqw Description: IPP65R190 - 650V AND 700V COOLMO
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 5.7A, 10V
Power Dissipation (Max): 72W (Tc)
Vgs(th) (Max) @ Id: 4V @ 290µA
Supplier Device Package: PG-TO220-3-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1150 pF @ 400 V
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IPW65R190C7 Infineon Technologies INFNS28170-1.pdf Description: IPW65R190 - 650V AND 700V COOLMO
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 5.7A, 10V
Power Dissipation (Max): 72W (Tc)
Vgs(th) (Max) @ Id: 4V @ 290µA
Supplier Device Package: PG-TO247-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1150 pF @ 400 V
Produkt ist nicht verfügbar
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IPA65R190E6 IPA65R190E6 Infineon Technologies INFN-S-A0004583440-1.pdf?t.download=true&u=5oefqw Description: IPA65R190 - 650V AND 700V COOLMO
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20.2A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 7.3A, 10V
Power Dissipation (Max): 34W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 730µA
Supplier Device Package: PG-TO220-3-111
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 73 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1620 pF @ 100 V
Produkt ist nicht verfügbar
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IPP50R190CE IPP50R190CE Infineon Technologies Infineon-IPP50R190CE-DS-v02_02-EN.pdf?fileId=5546d4624f205c9a014f5fd4fb6b7b68 Description: POWER FIELD-EFFECT TRANSISTOR, 5
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28.8A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 6.2A, 13V
Power Dissipation (Max): 152W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 510µA
Supplier Device Package: PG-TO220-3-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 13V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 47.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1137 pF @ 100 V
Produkt ist nicht verfügbar
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BAT15-099R BAT15-099R Infineon Technologies INFNS14601-1.pdf?t.download=true&u=5oefqw Description: MIXER DIODE, LOW BARRIER, X BAND
Packaging: Bulk
Package / Case: TO-253-4, TO-253AA
Diode Type: Schottky - Ring
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 0.5pF @ 0V, 1MHz
Voltage - Peak Reverse (Max): 4V
Supplier Device Package: PG-SOT143
Part Status: Active
Current - Max: 110 mA
Power Dissipation (Max): 100 mW
Produkt ist nicht verfügbar
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IPP065N03LG IPP065N03LG Infineon Technologies INFNS16322-1.pdf?t.download=true&u=5oefqw Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 30A, 10V
Power Dissipation (Max): 56W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: PG-TO220-3-1
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 15 V
auf Bestellung 1150 Stücke:
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710+0.63 EUR
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IPP084N06L3GXKSA1 IPP084N06L3GXKSA1 Infineon Technologies IPP_B084N06L3_Rev2.21.pdf?folderId=db3a304313b8b5a60113cee8763b02d7&fileId=db3a30431b3e89eb011b4592273f7db2 Description: MOSFET N-CH 60V 50A TO220-3
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 8.4mOhm @ 50A, 10V
Power Dissipation (Max): 79W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 34µA
Supplier Device Package: PG-TO220-3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 4900 pF @ 30 V
auf Bestellung 1364 Stücke:
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259+1.75 EUR
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IPP024N06N3G IPP024N06N3G Infineon Technologies INFNS16450-1.pdf?t.download=true&u=5oefqw Description: POWER FIELD-EFFECT TRANSISTOR, 1
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 2.4mOhm @ 100A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 4V @ 196µA
Supplier Device Package: PG-TO220-3-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 275 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 23000 pF @ 30 V
auf Bestellung 1151 Stücke:
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201+2.41 EUR
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IPP034NE7N3G IPP034NE7N3G Infineon Technologies INFN-S-A0001299349-1.pdf?t.download=true&u=5oefqw Description: IPP034NE7 - 12V-300V N-CHANNEL P
Produkt ist nicht verfügbar
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IPP065N04NG IPP065N04NG Infineon Technologies INFNS15858-1.pdf?t.download=true&u=5oefqw Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 50A, 10V
Power Dissipation (Max): 68W (Tc)
Vgs(th) (Max) @ Id: 4V @ 200µA
Supplier Device Package: PG-TO220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2800 pF @ 20 V
auf Bestellung 952 Stücke:
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952+0.63 EUR
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IRS26302DJPBF IRS26302DJPBF Infineon Technologies irs26302dpbf.pdf?fileId=5546d462533600a40153567b681d2845 description Description: IC GATE DRVR HALF-BRIDGE 44PLCC
Packaging: Bulk
Package / Case: 44-LCC (J-Lead), 32 Leads
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 44-PLCC, 32 Leads (16.58x16.58)
Rise / Fall Time (Typ): 125ns, 50ns
Channel Type: 3-Phase
Driven Configuration: Half-Bridge
Number of Drivers: 6
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Current - Peak Output (Source, Sink): 200mA, 350mA
Part Status: Not For New Designs
DigiKey Programmable: Not Verified
auf Bestellung 24598 Stücke:
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45+11.33 EUR
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BSO201SPH BSO201SPH Infineon Technologies INFNS13865-1.pdf?t.download=true&u=5oefqw Description: BSO201 - 20V-250V P-CHANNEL POWE
auf Bestellung 1414 Stücke:
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BSO201SPNTMA1 BSO201SPNTMA1 Infineon Technologies BSO201SP_211201.pdf Description: MOSFET P-CH 20V 14.9A 8DSO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 14.9A (Ta)
Rds On (Max) @ Id, Vgs: 8mOhm @ 14.9A, 4.5V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: PG-DSO-8
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 128 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 5962 pF @ 15 V
Produkt ist nicht verfügbar
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ICE5AR4770AGXUMA1 ICE5AR4770AGXUMA1 Infineon Technologies Infineon-ICE5xRxxxxAG-DS-v02_00-EN.pdf?fileId=5546d462602a9dc801607d6123c745a6 Description: IC OFFLINE SWITCH FLYBACK 12DSO
Packaging: Bulk
Package / Case: 16-SOIC (0.154", 3.90mm Width), 12 Leads
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Duty Cycle: 75%
Frequency - Switching: 100kHz
Internal Switch(s): Yes
Voltage - Breakdown: 700V
Output Isolation: Non-Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 10V ~ 25.5V
Supplier Device Package: PG-DSO-12-21
Fault Protection: Current Limiting, Open Loop, Over Load, Over Temperature, Over Voltage
Control Features: EN, Soft Start, Sync
Part Status: Active
Power (Watts): 15 W
auf Bestellung 7377 Stücke:
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ESD5V0S1U02VH6327XTSA1 ESD5V0S1U02VH6327XTSA1 Infineon Technologies ESD5V0S1U-02V.pdf Description: TVS DIODE 5VWM 14.5V PGSC7921
Packaging: Cut Tape (CT)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 35pF @ 1MHz
Current - Peak Pulse (10/1000µs): 5.5A (8/20µs)
Voltage - Reverse Standoff (Typ): 5V (Max)
Supplier Device Package: PG-SC79-2-1
Unidirectional Channels: 1
Voltage - Breakdown (Min): 5.7V
Voltage - Clamping (Max) @ Ipp: 14.5V (Typ)
Power - Peak Pulse: 66W
Power Line Protection: No
Part Status: Active
auf Bestellung 130211 Stücke:
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59+0.3 EUR
92+0.19 EUR
130+0.14 EUR
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ESD5V0L1B02VH6327XTSA1 ESD5V0L1B02VH6327XTSA1 Infineon Technologies ESD5V0L1B-02V.pdf Description: TVS DIODE 5VWM 25VC PGSC7921
Packaging: Cut Tape (CT)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C (TJ)
Capacitance @ Frequency: 8.5pF @ 1MHz
Current - Peak Pulse (10/1000µs): 2.5A (8/20µs)
Voltage - Reverse Standoff (Typ): 5V (Max)
Supplier Device Package: PG-SC79-2-1
Bidirectional Channels: 1
Voltage - Breakdown (Min): 7V
Voltage - Clamping (Max) @ Ipp: 25V (Typ)
Power Line Protection: No
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
auf Bestellung 3084 Stücke:
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31+0.58 EUR
47+0.38 EUR
107+0.17 EUR
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IPL60R095CFD7AUMA1 IPL60R095CFD7AUMA1 Infineon Technologies Infineon-IPL60R095CFD7-DS-v02_00-EN.pdf?fileId=5546d46262b31d2e01633f96542e4f53 Description: MOSFET N CH
Packaging: Tape & Reel (TR)
Package / Case: 4-PowerTSFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Rds On (Max) @ Id, Vgs: 95mOhm @ 1.4A, 10V
Power Dissipation (Max): 147W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 570µA
Supplier Device Package: PG-VSON-4-1
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2103 pF @ 400 V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+2.79 EUR
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IPL60R095CFD7AUMA1 IPL60R095CFD7AUMA1 Infineon Technologies Infineon-IPL60R095CFD7-DS-v02_00-EN.pdf?fileId=5546d46262b31d2e01633f96542e4f53 Description: MOSFET N CH
Packaging: Cut Tape (CT)
Package / Case: 4-PowerTSFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Rds On (Max) @ Id, Vgs: 95mOhm @ 1.4A, 10V
Power Dissipation (Max): 147W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 570µA
Supplier Device Package: PG-VSON-4-1
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2103 pF @ 400 V
auf Bestellung 4363 Stücke:
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3+7.62 EUR
10+5.05 EUR
100+3.6 EUR
500+3.41 EUR
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PTAC260302SCV1XWSA2 Infineon Technologies Description: IC AMP RF LDMOS H-37248H-4
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IPA126N10N3GXKSA1 IPA126N10N3GXKSA1 Infineon Technologies IPA126N10N3+G_Rev2.2.pdf?folderId=db3a304313b8b5a60113cee8763b02d7&fileId=db3a30432239cccd0122601c46c77f03 Description: MOSFET N-CH 100V 35A TO220-FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 12.6mOhm @ 35A, 10V
Power Dissipation (Max): 33W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 45µA
Supplier Device Package: PG-TO220 Full Pack
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 50 V
Produkt ist nicht verfügbar
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BCR555 INFNS17202-1.pdf?t.download=true&u=5oefqw
BCR555
Hersteller: Infineon Technologies
Description: BIPOLAR DIGITAL TRANSISTOR
Packaging: Bulk
Part Status: Active
Produkt ist nicht verfügbar
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SN7002W E6433 SN7002W_Rev2.5_pdf%5B1%5D.pdf?folderId=db3a3043156fd573011622e10b5c1f67&fileId=db3a3043344adb9d0134569a59ab6195&ack=t
SN7002W E6433
Hersteller: Infineon Technologies
Description: MOSFET N-CH 60V 230MA SOT323-3
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 230mA (Ta)
Rds On (Max) @ Id, Vgs: 5Ohm @ 230mA, 10V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 1.8V @ 26µA
Supplier Device Package: PG-SOT323
Grade: Automotive
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 1.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 45 pF @ 25 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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SN7002W L6327 SN7002W_Rev2.5_pdf%5B1%5D.pdf?folderId=db3a3043156fd573011622e10b5c1f67&fileId=db3a3043344adb9d0134569a59ab6195&ack=t
SN7002W L6327
Hersteller: Infineon Technologies
Description: MOSFET N-CH 60V 230MA SOT323-3
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 230mA (Ta)
Rds On (Max) @ Id, Vgs: 5Ohm @ 230mA, 10V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 1.8V @ 26µA
Supplier Device Package: PG-SOT323
Grade: Automotive
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 1.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 45 pF @ 25 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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SN7002W L6433 SN7002W_Rev2.5_pdf%5B1%5D.pdf?folderId=db3a3043156fd573011622e10b5c1f67&fileId=db3a3043344adb9d0134569a59ab6195&ack=t
SN7002W L6433
Hersteller: Infineon Technologies
Description: MOSFET N-CH 60V 230MA SOT323-3
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 230mA (Ta)
Rds On (Max) @ Id, Vgs: 5Ohm @ 230mA, 10V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 1.8V @ 26µA
Supplier Device Package: PG-SOT323
Grade: Automotive
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 1.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 45 pF @ 25 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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BTM7710G INFNS12358-1.pdf?t.download=true&u=5oefqw
BTM7710G
Hersteller: Infineon Technologies
Description: INTEGRATED FULL-BRIDGE DRIVER
Features: Slew Rate Controlled, Status Flag
Packaging: Bulk
Package / Case: 28-SOIC (0.295", 7.50mm Width)
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 4
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 70mOhm
Input Type: Non-Inverting
Voltage - Load: 1.8V ~ 42V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 8A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-DSO-28-22
Fault Protection: Open Load Detect, Over Temperature, Short Circuit, UVLO
Part Status: Obsolete
Produkt ist nicht verfügbar
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BTM7710GPXT INFNS12734-1.pdf?t.download=true&u=5oefqw
Hersteller: Infineon Technologies
Description: BTM7710 - INTEGRATED FULL-BRIDGE
Features: Slew Rate Controlled, Status Flag
Packaging: Bulk
Package / Case: 28-SOIC (0.295", 7.50mm Width)
Output Type: N/P-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 110mOhm
Input Type: Non-Inverting
Voltage - Load: 1.8V ~ 42V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 7A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-DSO-28-22
Fault Protection: Open Load Detect, Over Temperature, Short Circuit, UVLO
Part Status: Active
Produkt ist nicht verfügbar
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IRAM538-1065AE
Hersteller: Infineon Technologies
Description: POWER DRIVE MODULE DIP
Produkt ist nicht verfügbar
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IRAM538-1065AS
Hersteller: Infineon Technologies
Description: POWER DRIVE MODULE DIP
Packaging: Tube
Mounting Type: Through Hole
Type: IGBT
Configuration: 3 Phase
Current: 10 A
Voltage: 600 V
Produkt ist nicht verfügbar
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FP100R12KT4PBPSA1
FP100R12KT4PBPSA1
Hersteller: Infineon Technologies
Description: MOD IGBT LOW PWR ECONO3-3
Packaging: Bulk
auf Bestellung 139 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+207.8 EUR
Mindestbestellmenge: 3
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FP100R12KT4PBPSA1
FP100R12KT4PBPSA1
Hersteller: Infineon Technologies
Description: MOD IGBT LOW PWR ECONO3-3
Packaging: Tray
Produkt ist nicht verfügbar
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SP001434884 Infineon-IPN60R1K0CE-DS-v02_00-EN.pdf?fileId=5546d46253f6505701547aed24095b21
SP001434884
Hersteller: Infineon Technologies
Description: IPN60R1K0CEATMA1 - MOSFET
Packaging: Bulk
Package / Case: TO-261-3
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.8A (Tc)
Rds On (Max) @ Id, Vgs: 1Ohm @ 1.5A, 10V
Power Dissipation (Max): 5W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 130µA
Supplier Device Package: PG-SOT223
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 280 pF @ 100 V
Produkt ist nicht verfügbar
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BSZ042N04NSGATMA1 INFNS30160-1.pdf?t.download=true&u=5oefqw
BSZ042N04NSGATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 40V 40A TSDSON-8
auf Bestellung 41363 Stücke:
Lieferzeit 10-14 Tag (e)
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SAA-CIC61508-OSRF5VAA INFNS15458-1.pdf?t.download=true&u=5oefqw
SAA-CIC61508-OSRF5VAA
Hersteller: Infineon Technologies
Description: IC SUPERVISOR PWR SUP SUPPORT
auf Bestellung 2491 Stücke:
Lieferzeit 10-14 Tag (e)
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BSC059N04LS6ATMA1 Infineon-BSC059N04LS6-DS-v02_00-EN.pdf?fileId=5546d462689a790c0168bd22cfc6481f
BSC059N04LS6ATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 40V 17A TDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 49A (Tc), 59A (Tc)
Rds On (Max) @ Id, Vgs: 5.9mOhm @ 50A, 10V
Power Dissipation (Max): 3W (Ta), 38W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: PG-TDSON-8-6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 9.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 830 pF @ 20 V
auf Bestellung 20000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5000+0.49 EUR
10000+0.47 EUR
Mindestbestellmenge: 5000
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BSC059N04LS6ATMA1 Infineon-BSC059N04LS6-DS-v02_00-EN.pdf?fileId=5546d462689a790c0168bd22cfc6481f
BSC059N04LS6ATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 40V 17A TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 49A (Tc), 59A (Tc)
Rds On (Max) @ Id, Vgs: 5.9mOhm @ 50A, 10V
Power Dissipation (Max): 3W (Ta), 38W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: PG-TDSON-8-6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 9.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 830 pF @ 20 V
auf Bestellung 22701 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
9+2.04 EUR
14+1.29 EUR
100+0.86 EUR
500+0.67 EUR
1000+0.61 EUR
2000+0.57 EUR
Mindestbestellmenge: 9
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TT120N16SOFHPSA1 Infineon-TT120N-DS-v03_04-EN.pdf?fileId=5546d46148a8bbb90148d04e762d2e47
TT120N16SOFHPSA1
Hersteller: Infineon Technologies
Description: SCR MODULE 1.6V 190A MODULE
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 130°C
Structure: Series Connection - All SCRs
Current - Hold (Ih) (Max): 250 mA
Current - Gate Trigger (Igt) (Max): 100 mA
Number of SCRs, Diodes: 2 SCRs
Current - On State (It (AV)) (Max): 119 A
Voltage - Gate Trigger (Vgt) (Max): 2.5 V
Current - On State (It (RMS)) (Max): 190 A
Voltage - Off State: 1.6 kV
auf Bestellung 72 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+55.56 EUR
12+40.16 EUR
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BSL314PEH6327XTSA1 BSL314PE.pdf
BSL314PEH6327XTSA1
Hersteller: Infineon Technologies
Description: BSL314 - DUAL CHANNEL, SMALL SIN
auf Bestellung 2166 Stücke:
Lieferzeit 10-14 Tag (e)
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TLS202A1MBVHTMA1 Infineon-TLS202A1MBV-DS-v01_00-EN.pdf?fileId=5546d46258fc0bc1015969d30cbf4211
TLS202A1MBVHTMA1
Hersteller: Infineon Technologies
Description: IC REG LINEAR POS ADJ SCT595-5
Packaging: Bulk
Package / Case: 6-SMD (5 Leads), Gull Wing
Output Type: Adjustable
Mounting Type: Surface Mount
Current - Output: 150mA
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 75 µA
Voltage - Input (Max): 18V
Number of Regulators: 1
Supplier Device Package: PG-SCT595-5-1
Voltage - Output (Max): 5.25V
Voltage - Output (Min/Fixed): 1.2V
Grade: Automotive
Part Status: Not For New Designs
PSRR: 65dB (10kHz)
Voltage Dropout (Max): 1V @ 150mA
Protection Features: Over Current, Over Temperature, Short Circuit
Current - Supply (Max): 200 µA
Qualification: AEC-Q100
auf Bestellung 83559 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
375+1.21 EUR
Mindestbestellmenge: 375
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DEMOBOARDTLS202A1TOBO1 Infineon-TLS202A1_Demoboard_Manual-UserManual-v01_00-EN.pdf?fileId=5546d46261d5e6820161e7590f83400b
DEMOBOARDTLS202A1TOBO1
Hersteller: Infineon Technologies
Description: EVAL BOARD FOR TLS202A1
Packaging: Box
Voltage - Output: 3.3V
Voltage - Input: 2.7V ~ 18V
Current - Output: 150mA
Contents: Board(s)
Regulator Type: Positive Adjustable
Board Type: Fully Populated
Utilized IC / Part: TLS202A1
Supplied Contents: Board(s)
Channels per IC: 1 - Single
auf Bestellung 1 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+87.4 EUR
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BAS40-05W INFNS19700-1.pdf?t.download=true&u=5oefqw
BAS40-05W
Hersteller: Infineon Technologies
Description: DIODE ARR SCHOT 40V 120MA SOT323
Packaging: Bulk
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 120mA (DC)
Supplier Device Package: PG-SOT323-3
Operating Temperature - Junction: 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 40 mA
Current - Reverse Leakage @ Vr: 1 µA @ 30 V
Produkt ist nicht verfügbar
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BAS40-05E6327 INFNS11688-1.pdf?t.download=true&u=5oefqw
BAS40-05E6327
Hersteller: Infineon Technologies
Description: BAS40 - HIGH SPEED SWITCHING, CL
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 120mA (DC)
Supplier Device Package: PG-SOT23-3-11
Operating Temperature - Junction: 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 40 mA
Current - Reverse Leakage @ Vr: 1 µA @ 30 V
Produkt ist nicht verfügbar
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BFP183-E7764 INFNS30056-1.pdf?t.download=true&u=5oefqw
Hersteller: Infineon Technologies
Description: RF BIPOLAR TRANSISTOR
Packaging: Bulk
Package / Case: TO-253-4, TO-253AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 22dB
Power - Max: 250mW
Current - Collector (Ic) (Max): 65mA
Voltage - Collector Emitter Breakdown (Max): 12V
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 15mA, 8V
Frequency - Transition: 8GHz
Noise Figure (dB Typ @ f): 0.9dB ~ 1.4dB @ 900MHz ~ 1.8GHz
Supplier Device Package: PG-SOT143-4
Part Status: Active
Produkt ist nicht verfügbar
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BFP183E7764 INFNS30056-1.pdf?t.download=true&u=5oefqw
BFP183E7764
Hersteller: Infineon Technologies
Description: RF BIPOLAR TRANSISTOR
Produkt ist nicht verfügbar
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BFP 183 E7764 INFNS30056-1.pdf?t.download=true&u=5oefqw
Hersteller: Infineon Technologies
Description: RF BIPOLAR TRANSISTOR
Produkt ist nicht verfügbar
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BFP183WH6327 INFNS10806-1.pdf?t.download=true&u=5oefqw
BFP183WH6327
Hersteller: Infineon Technologies
Description: RF TRANSISTOR, L BAND, NPN
Produkt ist nicht verfügbar
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BFP183WE6327 INFNS10806-1.pdf?t.download=true&u=5oefqw
BFP183WE6327
Hersteller: Infineon Technologies
Description: RF TRANSISTOR, L BAND, NPN
Produkt ist nicht verfügbar
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BFP183 INFNS30056-1.pdf?t.download=true&u=5oefqw
BFP183
Hersteller: Infineon Technologies
Description: BFP183 - LOW-NOISE SI TRANSISTOR
Produkt ist nicht verfügbar
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BFP 181 E7764 INFNS27310-1.pdf?t.download=true&u=5oefqw
BFP 181 E7764
Hersteller: Infineon Technologies
Description: RF TRANSISTOR, L BAND, NPN
Packaging: Bulk
Package / Case: TO-253-4, TO-253AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 17.5dB ~ 21dB
Power - Max: 175mW
Current - Collector (Ic) (Max): 20mA
Voltage - Collector Emitter Breakdown (Max): 12V
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 70mA, 8V
Frequency - Transition: 8GHz
Noise Figure (dB Typ @ f): 0.9dB ~ 1.2dB @ 900MHz ~ 1.8GHz
Supplier Device Package: PG-SOT-143-3D
Part Status: Active
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4480+0.12 EUR
Mindestbestellmenge: 4480
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BFP181E7764 INFNS27310-1.pdf?t.download=true&u=5oefqw
Hersteller: Infineon Technologies
Description: RF TRANSISTOR, L BAND, NPN
Packaging: Bulk
Package / Case: TO-253-4, TO-253AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 21dB
Power - Max: 175mW
Current - Collector (Ic) (Max): 20mA
Voltage - Collector Emitter Breakdown (Max): 12V
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 70mA, 8V
Frequency - Transition: 8GHz
Noise Figure (dB Typ @ f): 0.9dB ~ 1.2dB @ 900MHz ~ 1.8GHz
Supplier Device Package: PG-SOT143-4
Part Status: Active
Produkt ist nicht verfügbar
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BFP182WH6327XTSA1 INFNS10735-1.pdf?t.download=true&u=5oefqw
BFP182WH6327XTSA1
Hersteller: Infineon Technologies
Description: RF TRANS NPN 12V 8GHZ PG-SOT-343
Packaging: Cut Tape (CT)
Package / Case: SC-82A, SOT-343
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 22dB
Power - Max: 250mW
Current - Collector (Ic) (Max): 35mA
Voltage - Collector Emitter Breakdown (Max): 12V
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 8V
Frequency - Transition: 8GHz
Noise Figure (dB Typ @ f): 0.9dB ~ 1.3dB @ 900MHz ~ 1.8GHz
Supplier Device Package: PG-SOT343-3D
auf Bestellung 8081 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
42+0.42 EUR
61+0.29 EUR
69+0.26 EUR
100+0.22 EUR
250+0.2 EUR
500+0.19 EUR
1000+0.18 EUR
Mindestbestellmenge: 42
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BFP193E6327 INFNS19215-1.pdf?t.download=true&u=5oefqw
BFP193E6327
Hersteller: Infineon Technologies
Description: BFP193 - HIGH LINEARITY SI- AND
Packaging: Bulk
Package / Case: TO-253-4, TO-253AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 18dB
Power - Max: 580mW
Current - Collector (Ic) (Max): 80mA
Voltage - Collector Emitter Breakdown (Max): 12V
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 30mA, 8V
Frequency - Transition: 8GHz
Noise Figure (dB Typ @ f): 1dB ~ 1.6dB @ 900MHz ~ 1.8GHz
Supplier Device Package: SOT143 (SC-61)
Part Status: Active
auf Bestellung 4760 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3355+0.16 EUR
Mindestbestellmenge: 3355
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IKFW60N65ES5XKSA1 Infineon-IKFW60N65ES5-DataSheet-v02_01-EN.pdf?fileId=5546d46274cf54d50174d97303931f06
IKFW60N65ES5XKSA1
Hersteller: Infineon Technologies
Description: IGBT TRENCH FS 650V 77A HSIP247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 77 ns
Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 50A
Supplier Device Package: PG-HSIP247-3-2
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 20ns/127ns
Switching Energy: 1.23mJ (on), 550µJ (off)
Test Condition: 400V, 50A, 8.2Ohm, 15V
Gate Charge: 120 nC
Part Status: Active
Current - Collector (Ic) (Max): 77 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 200 A
Power - Max: 138 W
auf Bestellung 213 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+11.79 EUR
30+6.84 EUR
120+5.76 EUR
Mindestbestellmenge: 2
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1ED44173N01BXTSA1 Infineon-1ED44173N01B-DataSheet-v01_00-EN.pdf?fileId=5546d46272aa54c00172bc99c2d45678
1ED44173N01BXTSA1
Hersteller: Infineon Technologies
Description: IC GATE DRVR LOW-SIDE SOT23-6
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 8.6V ~ 20V
Input Type: Non-Inverting
Supplier Device Package: PG-SOT23-6-3
Rise / Fall Time (Typ): 5ns, 5ns
Channel Type: Single
Driven Configuration: Low-Side
Number of Drivers: 1
Gate Type: MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 1.2V, 1.9V
Current - Peak Output (Source, Sink): 2.6A, 2.6A
Part Status: Active
DigiKey Programmable: Not Verified
auf Bestellung 9000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.52 EUR
6000+0.51 EUR
9000+0.5 EUR
Mindestbestellmenge: 3000
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IPI60R385CP INFNS10204-1.pdf?t.download=true&u=5oefqw
Hersteller: Infineon Technologies
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 385mOhm @ 5.2A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 340µA
Supplier Device Package: PG-TO262-3-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 790 pF @ 100 V
auf Bestellung 78346 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
293+1.81 EUR
Mindestbestellmenge: 293
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IPW50R190CE INFN-S-A0002262909-1.pdf?t.download=true&u=5oefqw
IPW50R190CE
Hersteller: Infineon Technologies
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24.8A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 6.2A, 13V
Power Dissipation (Max): 152W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 510µA
Supplier Device Package: PG-TO247-3-41
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 13V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 47.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1137 pF @ 100 V
Produkt ist nicht verfügbar
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BCR321UE6327 INFN-S-A0000572132-1.pdf?t.download=true&u=5oefqw
BCR321UE6327
Hersteller: Infineon Technologies
Description: BCR321 - LED DRIVER & ACTIVE BIA
auf Bestellung 3290 Stücke:
Lieferzeit 10-14 Tag (e)
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IRAMS10UP60C-2
Hersteller: Infineon Technologies
Description: IRAMS10 - INTELLIGENT POWER MODU
Produkt ist nicht verfügbar
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BGF117E6328
Hersteller: Infineon Technologies
Description: MINI/MICROSD CARD ESD PROTECTION
Packaging: Bulk
auf Bestellung 27000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1222+0.4 EUR
Mindestbestellmenge: 1222
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IPL65R190E6AUMA1938 Infineon-IPL65R190E6-DS-v02_01-EN.pdf?fileId=db3a304344d727a80144df7870ce0c0c
Hersteller: Infineon Technologies
Description: IPL65R190 - 650V AND 700V COOLMO
Packaging: Bulk
Package / Case: 4-PowerTSFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20.2A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 7.3A, 10V
Power Dissipation (Max): 151W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 700µA
Supplier Device Package: PG-VSON-4-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 73 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1620 pF @ 100 V
Produkt ist nicht verfügbar
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IPA65R190C7 INFNS30021-1.pdf?t.download=true&u=5oefqw
IPA65R190C7
Hersteller: Infineon Technologies
Description: IPA65R190 - 650V AND 700V COOLMO
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 5.7A, 10V
Power Dissipation (Max): 30W (Tc)
Vgs(th) (Max) @ Id: 4V @ 290µA
Supplier Device Package: PG-TO220 Full Pack
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1150 pF @ 400 V
auf Bestellung 424 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
180+2.94 EUR
Mindestbestellmenge: 180
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IPP65R190C7 INFNS27991-1.pdf?t.download=true&u=5oefqw
IPP65R190C7
Hersteller: Infineon Technologies
Description: IPP65R190 - 650V AND 700V COOLMO
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 5.7A, 10V
Power Dissipation (Max): 72W (Tc)
Vgs(th) (Max) @ Id: 4V @ 290µA
Supplier Device Package: PG-TO220-3-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1150 pF @ 400 V
Produkt ist nicht verfügbar
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IPW65R190C7 INFNS28170-1.pdf
Hersteller: Infineon Technologies
Description: IPW65R190 - 650V AND 700V COOLMO
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 5.7A, 10V
Power Dissipation (Max): 72W (Tc)
Vgs(th) (Max) @ Id: 4V @ 290µA
Supplier Device Package: PG-TO247-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1150 pF @ 400 V
Produkt ist nicht verfügbar
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IPA65R190E6 INFN-S-A0004583440-1.pdf?t.download=true&u=5oefqw
IPA65R190E6
Hersteller: Infineon Technologies
Description: IPA65R190 - 650V AND 700V COOLMO
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20.2A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 7.3A, 10V
Power Dissipation (Max): 34W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 730µA
Supplier Device Package: PG-TO220-3-111
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 73 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1620 pF @ 100 V
Produkt ist nicht verfügbar
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IPP50R190CE Infineon-IPP50R190CE-DS-v02_02-EN.pdf?fileId=5546d4624f205c9a014f5fd4fb6b7b68
IPP50R190CE
Hersteller: Infineon Technologies
Description: POWER FIELD-EFFECT TRANSISTOR, 5
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28.8A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 6.2A, 13V
Power Dissipation (Max): 152W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 510µA
Supplier Device Package: PG-TO220-3-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 13V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 47.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1137 pF @ 100 V
Produkt ist nicht verfügbar
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BAT15-099R INFNS14601-1.pdf?t.download=true&u=5oefqw
BAT15-099R
Hersteller: Infineon Technologies
Description: MIXER DIODE, LOW BARRIER, X BAND
Packaging: Bulk
Package / Case: TO-253-4, TO-253AA
Diode Type: Schottky - Ring
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 0.5pF @ 0V, 1MHz
Voltage - Peak Reverse (Max): 4V
Supplier Device Package: PG-SOT143
Part Status: Active
Current - Max: 110 mA
Power Dissipation (Max): 100 mW
Produkt ist nicht verfügbar
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IPP065N03LG INFNS16322-1.pdf?t.download=true&u=5oefqw
IPP065N03LG
Hersteller: Infineon Technologies
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 30A, 10V
Power Dissipation (Max): 56W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: PG-TO220-3-1
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 15 V
auf Bestellung 1150 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
710+0.63 EUR
Mindestbestellmenge: 710
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IPP084N06L3GXKSA1 IPP_B084N06L3_Rev2.21.pdf?folderId=db3a304313b8b5a60113cee8763b02d7&fileId=db3a30431b3e89eb011b4592273f7db2
IPP084N06L3GXKSA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 60V 50A TO220-3
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 8.4mOhm @ 50A, 10V
Power Dissipation (Max): 79W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 34µA
Supplier Device Package: PG-TO220-3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 4900 pF @ 30 V
auf Bestellung 1364 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
259+1.75 EUR
Mindestbestellmenge: 259
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IPP024N06N3G INFNS16450-1.pdf?t.download=true&u=5oefqw
IPP024N06N3G
Hersteller: Infineon Technologies
Description: POWER FIELD-EFFECT TRANSISTOR, 1
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 2.4mOhm @ 100A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 4V @ 196µA
Supplier Device Package: PG-TO220-3-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 275 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 23000 pF @ 30 V
auf Bestellung 1151 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
201+2.41 EUR
Mindestbestellmenge: 201
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IPP034NE7N3G INFN-S-A0001299349-1.pdf?t.download=true&u=5oefqw
IPP034NE7N3G
Hersteller: Infineon Technologies
Description: IPP034NE7 - 12V-300V N-CHANNEL P
Produkt ist nicht verfügbar
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IPP065N04NG INFNS15858-1.pdf?t.download=true&u=5oefqw
IPP065N04NG
Hersteller: Infineon Technologies
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 50A, 10V
Power Dissipation (Max): 68W (Tc)
Vgs(th) (Max) @ Id: 4V @ 200µA
Supplier Device Package: PG-TO220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2800 pF @ 20 V
auf Bestellung 952 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
952+0.63 EUR
Mindestbestellmenge: 952
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IRS26302DJPBF description irs26302dpbf.pdf?fileId=5546d462533600a40153567b681d2845
IRS26302DJPBF
Hersteller: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 44PLCC
Packaging: Bulk
Package / Case: 44-LCC (J-Lead), 32 Leads
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 44-PLCC, 32 Leads (16.58x16.58)
Rise / Fall Time (Typ): 125ns, 50ns
Channel Type: 3-Phase
Driven Configuration: Half-Bridge
Number of Drivers: 6
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Current - Peak Output (Source, Sink): 200mA, 350mA
Part Status: Not For New Designs
DigiKey Programmable: Not Verified
auf Bestellung 24598 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
45+11.33 EUR
Mindestbestellmenge: 45
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BSO201SPH INFNS13865-1.pdf?t.download=true&u=5oefqw
BSO201SPH
Hersteller: Infineon Technologies
Description: BSO201 - 20V-250V P-CHANNEL POWE
auf Bestellung 1414 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
424+1.17 EUR
Mindestbestellmenge: 424
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BSO201SPNTMA1 BSO201SP_211201.pdf
BSO201SPNTMA1
Hersteller: Infineon Technologies
Description: MOSFET P-CH 20V 14.9A 8DSO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 14.9A (Ta)
Rds On (Max) @ Id, Vgs: 8mOhm @ 14.9A, 4.5V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: PG-DSO-8
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 128 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 5962 pF @ 15 V
Produkt ist nicht verfügbar
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ICE5AR4770AGXUMA1 Infineon-ICE5xRxxxxAG-DS-v02_00-EN.pdf?fileId=5546d462602a9dc801607d6123c745a6
ICE5AR4770AGXUMA1
Hersteller: Infineon Technologies
Description: IC OFFLINE SWITCH FLYBACK 12DSO
Packaging: Bulk
Package / Case: 16-SOIC (0.154", 3.90mm Width), 12 Leads
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Duty Cycle: 75%
Frequency - Switching: 100kHz
Internal Switch(s): Yes
Voltage - Breakdown: 700V
Output Isolation: Non-Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 10V ~ 25.5V
Supplier Device Package: PG-DSO-12-21
Fault Protection: Current Limiting, Open Loop, Over Load, Over Temperature, Over Voltage
Control Features: EN, Soft Start, Sync
Part Status: Active
Power (Watts): 15 W
auf Bestellung 7377 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
288+1.83 EUR
Mindestbestellmenge: 288
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ESD5V0S1U02VH6327XTSA1 ESD5V0S1U-02V.pdf
ESD5V0S1U02VH6327XTSA1
Hersteller: Infineon Technologies
Description: TVS DIODE 5VWM 14.5V PGSC7921
Packaging: Cut Tape (CT)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 35pF @ 1MHz
Current - Peak Pulse (10/1000µs): 5.5A (8/20µs)
Voltage - Reverse Standoff (Typ): 5V (Max)
Supplier Device Package: PG-SC79-2-1
Unidirectional Channels: 1
Voltage - Breakdown (Min): 5.7V
Voltage - Clamping (Max) @ Ipp: 14.5V (Typ)
Power - Peak Pulse: 66W
Power Line Protection: No
Part Status: Active
auf Bestellung 130211 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
59+0.3 EUR
92+0.19 EUR
130+0.14 EUR
Mindestbestellmenge: 59
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ESD5V0L1B02VH6327XTSA1 ESD5V0L1B-02V.pdf
ESD5V0L1B02VH6327XTSA1
Hersteller: Infineon Technologies
Description: TVS DIODE 5VWM 25VC PGSC7921
Packaging: Cut Tape (CT)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C (TJ)
Capacitance @ Frequency: 8.5pF @ 1MHz
Current - Peak Pulse (10/1000µs): 2.5A (8/20µs)
Voltage - Reverse Standoff (Typ): 5V (Max)
Supplier Device Package: PG-SC79-2-1
Bidirectional Channels: 1
Voltage - Breakdown (Min): 7V
Voltage - Clamping (Max) @ Ipp: 25V (Typ)
Power Line Protection: No
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
auf Bestellung 3084 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
31+0.58 EUR
47+0.38 EUR
107+0.17 EUR
Mindestbestellmenge: 31
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IPL60R095CFD7AUMA1 Infineon-IPL60R095CFD7-DS-v02_00-EN.pdf?fileId=5546d46262b31d2e01633f96542e4f53
IPL60R095CFD7AUMA1
Hersteller: Infineon Technologies
Description: MOSFET N CH
Packaging: Tape & Reel (TR)
Package / Case: 4-PowerTSFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Rds On (Max) @ Id, Vgs: 95mOhm @ 1.4A, 10V
Power Dissipation (Max): 147W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 570µA
Supplier Device Package: PG-VSON-4-1
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2103 pF @ 400 V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+2.79 EUR
Mindestbestellmenge: 3000
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IPL60R095CFD7AUMA1 Infineon-IPL60R095CFD7-DS-v02_00-EN.pdf?fileId=5546d46262b31d2e01633f96542e4f53
IPL60R095CFD7AUMA1
Hersteller: Infineon Technologies
Description: MOSFET N CH
Packaging: Cut Tape (CT)
Package / Case: 4-PowerTSFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Rds On (Max) @ Id, Vgs: 95mOhm @ 1.4A, 10V
Power Dissipation (Max): 147W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 570µA
Supplier Device Package: PG-VSON-4-1
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2103 pF @ 400 V
auf Bestellung 4363 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+7.62 EUR
10+5.05 EUR
100+3.6 EUR
500+3.41 EUR
Mindestbestellmenge: 3
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PTAC260302SCV1XWSA2
Hersteller: Infineon Technologies
Description: IC AMP RF LDMOS H-37248H-4
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPA126N10N3GXKSA1 IPA126N10N3+G_Rev2.2.pdf?folderId=db3a304313b8b5a60113cee8763b02d7&fileId=db3a30432239cccd0122601c46c77f03
IPA126N10N3GXKSA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 100V 35A TO220-FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 12.6mOhm @ 35A, 10V
Power Dissipation (Max): 33W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 45µA
Supplier Device Package: PG-TO220 Full Pack
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 50 V
Produkt ist nicht verfügbar
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