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IPP65R280C6 IPP65R280C6 Infineon Technologies INFNS16437-1.pdf?t.download=true&u=5oefqw Description: POWER FIELD-EFFECT TRANSISTOR, 6
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13.8A (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 4.4A, 10V
Power Dissipation (Max): 104W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 440µA
Supplier Device Package: PG-TO220-3-1
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 950 pF @ 100 V
Produkt ist nicht verfügbar
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IPI65R280C6 IPI65R280C6 Infineon Technologies INFN-S-A0004583427-1.pdf?t.download=true&u=5oefqw Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13.8A (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 4.4A, 10V
Power Dissipation (Max): 104W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 440µA
Supplier Device Package: PG-TO262-3-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 950 pF @ 100 V
auf Bestellung 500 Stücke:
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260+1.88 EUR
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IPI65R280C6XKSA1 IPI65R280C6XKSA1 Infineon Technologies IPI65R280C6_2_0.pdf?folderId=db3a3043163797a6011637d4bae7003b&fileId=db3a30432a7fedfc012a8ac1e7c758cf Description: MOSFET N-CH 650V 13.8A TO262-3
Packaging: Bulk
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13.8A (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 4.4A, 10V
Power Dissipation (Max): 104W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 440µA
Supplier Device Package: PG-TO262-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 950 pF @ 100 V
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IPB65R280E6 IPB65R280E6 Infineon Technologies INFNS16656-1.pdf?t.download=true&u=5oefqw Description: OPTLMOS N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13.8A (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 4.4A, 10V
Power Dissipation (Max): 104W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 440µA
Supplier Device Package: PG-TO263-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 950 pF @ 100 V
Produkt ist nicht verfügbar
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IPW65R280C6 IPW65R280C6 Infineon Technologies INFN-S-A0004583427-1.pdf?t.download=true&u=5oefqw Description: 650 V COOLMOS E6 POWER MOSFET
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13.8A (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 4.4A, 10V
Power Dissipation (Max): 104W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 440µA
Supplier Device Package: PG-TO247-3-41
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 950 pF @ 100 V
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IPW65R280E6FKSA1 IPW65R280E6FKSA1 Infineon Technologies IPW65R280E6_2_1.pdf?folderId=db3a3043163797a6011637d4bae7003b&fileId=db3a30432a7fedfc012a9e4d5aa80758 Description: MOSFET N-CH 650V 13.8A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13.8A (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 4.4A, 10V
Power Dissipation (Max): 104W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 440µA
Supplier Device Package: PG-TO247-3-1
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 950 pF @ 100 V
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170+2.68 EUR
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IPW65R280E6 IPW65R280E6 Infineon Technologies INFN-S-A0004457106-1.pdf?t.download=true&u=5oefqw Description: 650 V COOLMOS E6 POWER MOSFET
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13.8A (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 4.4A, 10V
Power Dissipation (Max): 104W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 440µA
Supplier Device Package: PG-TO247-3-41
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 950 pF @ 100 V
Produkt ist nicht verfügbar
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IPP048N04NG IPP048N04NG Infineon Technologies INFNS15602-1.pdf?t.download=true&u=5oefqw Description: IPP048N04 - 12V-300V N-CHANNEL P
Produkt ist nicht verfügbar
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IFX1117MEVHTMA1 IFX1117MEVHTMA1 Infineon Technologies IFX1117_Rev1.0_2-24-11.pdf Description: IC REG LIN POS ADJ 1A SOT223-4
Voltage - Output (Max): 13.6V
Supplier Device Package: PG-SOT223-4-21
Number of Regulators: 1
Voltage - Input (Max): 15V
Current - Quiescent (Iq): 5 mA
Output Configuration: Positive
Operating Temperature: 0°C ~ 125°C
Current - Output: 1A
Mounting Type: Surface Mount
Output Type: Adjustable
Package / Case: TO-261-4, TO-261AA
Packaging: Bulk
Protection Features: Over Current, Over Temperature, Short Circuit
Voltage Dropout (Max): 1.4V @ 1A
PSRR: 70dB (120Hz)
Voltage - Output (Min/Fixed): 1.25V
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BCR129E6327 BCR129E6327 Infineon Technologies INFNS17180-1.pdf?t.download=true&u=5oefqw Description: BCR129 - DIGITAL TRANSISTOR
Resistor - Base (R1): 10 kOhms
Frequency - Transition: 150 MHz
Power - Max: 200 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Active
Supplier Device Package: PG-SOT23-3-11
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 5mA, 5V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Transistor Type: NPN - Pre-Biased
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Bulk
Produkt ist nicht verfügbar
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IPW65R095C7 IPW65R095C7 Infineon Technologies Description: MOSFET N-CH 650V 24A TO247
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 95mOhm @ 11.8A, 10V
Power Dissipation (Max): 128W (Tc)
Vgs(th) (Max) @ Id: 4V @ 590µA
Supplier Device Package: PG-TO247
Part Status: Active
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2140 pF @ 400 V
Produkt ist nicht verfügbar
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IPD90N04S3-04 IPD90N04S3-04 Infineon Technologies INFNS10879-1.pdf?t.download=true&u=5oefqw Description: OPTLMOS N-CHANNEL POWER MOSFET
Vgs(th) (Max) @ Id: 4V @ 90µA
Power Dissipation (Max): 136W (Tc)
Rds On (Max) @ Id, Vgs: 3.6mOhm @ 80A, 10V
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Bulk
Input Capacitance (Ciss) (Max) @ Vds: 5200 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PG-TO252-3-11
Produkt ist nicht verfügbar
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IPB0401NM5SATMA1 Infineon Technologies Description: TRENCH >=100V
Packaging: Tape & Reel (TR)
Part Status: Active
Produkt ist nicht verfügbar
 Mindestbestellmenge: 1000 Stücke
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TLE6251DSXT TLE6251DSXT Infineon Technologies Infineon-TLE6251DS-DS-v03_10-EN.pdf?fileId=5546d46259d9a4bf015a3d2d98f4606e Description: IC TRANSCEIVER FULL 1/1 DSO-8
Part Status: Active
Duplex: Full
Receiver Hysteresis: 200 mV
Supplier Device Package: PG-DSO-8-16
Protocol: CANbus
Data Rate: 1MBd
Number of Drivers/Receivers: 1/1
Voltage - Supply: 4.75V ~ 5.25V
Operating Temperature: -40°C ~ 150°C (TJ)
Type: Transceiver
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Bulk
Produkt ist nicht verfügbar
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TLE6251DXUMA2 TLE6251DXUMA2 Infineon Technologies Infineon-TLE6251D-DS-v01_10-EN.pdf?fileId=5546d46259d9a4bf015a3d2d680b605d Description: IC TRANSCEIVER FULL 1/1 PGDSO816
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Type: Transceiver
Operating Temperature: -40°C ~ 150°C
Voltage - Supply: 4.75V ~ 5.25V
Number of Drivers/Receivers: 1/1
Data Rate: 1MBd
Protocol: CANbus
Supplier Device Package: PG-DSO-8-16
Receiver Hysteresis: 200 mV
Duplex: Full
Part Status: Active
auf Bestellung 2500 Stücke:
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2500+1.22 EUR
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TLE6251DXUMA2 TLE6251DXUMA2 Infineon Technologies Infineon-TLE6251D-DS-v01_10-EN.pdf?fileId=5546d46259d9a4bf015a3d2d680b605d Description: IC TRANSCEIVER FULL 1/1 PGDSO816
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Type: Transceiver
Operating Temperature: -40°C ~ 150°C
Voltage - Supply: 4.75V ~ 5.25V
Number of Drivers/Receivers: 1/1
Data Rate: 1MBd
Protocol: CANbus
Supplier Device Package: PG-DSO-8-16
Receiver Hysteresis: 200 mV
Duplex: Full
Part Status: Active
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10+1.79 EUR
25+1.63 EUR
100+1.44 EUR
250+1.36 EUR
500+1.31 EUR
1000+1.3 EUR
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TLE6251DS TLE6251DS Infineon Technologies Infineon-TLE6251-2G-DS-v01_22-EN.pdf?fileId=5546d4625996c0c30159a766fb9977b8 Description: IC TRANSCEIVER FULL 1/1 DSO-8
Packaging: Bulk
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Type: Transceiver
Operating Temperature: -40°C ~ 150°C
Voltage - Supply: 4.75V ~ 5.25V
Number of Drivers/Receivers: 1/1
Data Rate: 1MBd
Protocol: CANbus
Supplier Device Package: PG-DSO-8-16
Receiver Hysteresis: 200 mV
Duplex: Full
Part Status: Active
Produkt ist nicht verfügbar
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REFILD8150DC15ATOBO1 REFILD8150DC15ATOBO1 Infineon Technologies Infineon-Reference_design_REF_ILD8150_DC_1.5A_high_frequency_operation-ApplicationNotes-v01_00-EN.pdf?fileId=5546d4626d66c2b1016d73f768f820ae Description: EVAL BOARD FOR ILD8150
Features: Dimmable
Packaging: Box
Voltage - Input: 8V ~ 80V
Contents: Board(s)
Current - Output / Channel: 1.5A
Utilized IC / Part: ILD8150
Supplied Contents: Board(s)
Outputs and Type: 1 Non-Isolated Output
Part Status: Active
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BSC430N25NSFDATMA1 BSC430N25NSFDATMA1 Infineon Technologies Infineon-BSC430N25NSFD-DS-v02_01-EN.pdf?fileId=5546d462689a790c0168c7d453686447 Description: MOSFET N-CH 250V TSON-8
Vgs (Max): ±20V
Part Status: Active
Supplier Device Package: PG-TSON-8-3
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
Drain to Source Voltage (Vdss): 250 V
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BSC430N25NSFDATMA1 BSC430N25NSFDATMA1 Infineon Technologies Infineon-BSC430N25NSFD-DS-v02_01-EN.pdf?fileId=5546d462689a790c0168c7d453686447 Description: MOSFET N-CH 250V TSON-8
Drain to Source Voltage (Vdss): 250 V
Vgs (Max): ±20V
Part Status: Active
Supplier Device Package: PG-TSON-8-3
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
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10+5.37 EUR
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SFH756 Infineon Technologies SFH756_756V.pdf Description: XMITTER FIBER OPTIC 660NM
Current - DC Forward (If) (Max): 50 mA
Voltage - DC Reverse (Vr) (Max): 3 V
Capacitance: 30 pF
Spectral Bandwidth: 25nm
Voltage - Forward (Vf) (Typ): 2.1V
Wavelength: 660nm
Packaging: Bulk
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CY7C1460SV25-250BZC CY7C1460SV25-250BZC Infineon Technologies Description: IC SRAM 36MBIT PARALLEL 165FBGA
auf Bestellung 675 Stücke:
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6+85.16 EUR
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TLE4906L TLE4906L Infineon Technologies Infineon-TLE4906-DS-v02_00-en.pdf?fileId=db3a304316f66ee8011754425fe50642 Description: TLE4906 - HALL SWITCH
Part Status: Active
Test Condition: 25°C
Supplier Device Package: PG-SSO-3-2
Current - Supply (Max): 6mA
Current - Output (Max): 20mA
Sensing Range: 13.5mT Trip, 5mT Release
Technology: Hall Effect
Voltage - Supply: 2.7V ~ 18V
Operating Temperature: -40°C ~ 150°C (TJ)
Function: Unipolar Switch
Mounting Type: Through Hole
Polarization: South Pole
Output Type: Open Collector
Package / Case: 3-SSIP, SSO-3-02
Features: Temperature Compensated
Packaging: Bulk
Produkt ist nicht verfügbar
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IAUZ40N06S5N050ATMA1 IAUZ40N06S5N050ATMA1 Infineon Technologies Infineon-IAUZ40N06S5N050-DataSheet-v01_00-EN.pdf?fileId=5546d46271bf4f920171f47191a561b9 Description: MOSFET N-CH 60V 40A TSDSON-8-33
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tj)
Rds On (Max) @ Id, Vgs: 5mOhm @ 20A, 10V
Power Dissipation (Max): 71W (Tc)
Vgs(th) (Max) @ Id: 3.4V @ 29µA
Supplier Device Package: PG-TSDSON-8-33
Part Status: Active
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 30.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 30 V
Grade: Automotive
Qualification: AEC-Q101
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5000+0.7 EUR
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IAUZ40N06S5N050ATMA1 IAUZ40N06S5N050ATMA1 Infineon Technologies Infineon-IAUZ40N06S5N050-DataSheet-v01_00-EN.pdf?fileId=5546d46271bf4f920171f47191a561b9 Description: MOSFET N-CH 60V 40A TSDSON-8-33
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tj)
Rds On (Max) @ Id, Vgs: 5mOhm @ 20A, 10V
Power Dissipation (Max): 71W (Tc)
Vgs(th) (Max) @ Id: 3.4V @ 29µA
Supplier Device Package: PG-TSDSON-8-33
Grade: Automotive
Part Status: Active
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 30.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 30 V
Qualification: AEC-Q101
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7+2.75 EUR
11+1.74 EUR
100+1.16 EUR
500+0.92 EUR
1000+0.84 EUR
2000+0.77 EUR
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IPP040N06N3G IPP040N06N3G Infineon Technologies INFNS17005-1.pdf?t.download=true&u=5oefqw Description: POWER FIELD-EFFECT TRANSISTOR, 9
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 130A (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 90A, 10V
Power Dissipation (Max): 188W (Tc)
Vgs(th) (Max) @ Id: 4V @ 90µA
Supplier Device Package: PG-TO220-3-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 98 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11000 pF @ 30 V
Produkt ist nicht verfügbar
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IGW15T120 IGW15T120 Infineon Technologies INFNS14050-1.pdf?t.download=true&u=5oefqw Description: IGW15T120 - DISCRETE IGBT WITHOU
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 15A
Supplier Device Package: PG-TO247-3-21
Td (on/off) @ 25°C: 50ns/520ns
Switching Energy: 1.3mJ (on), 1.4mJ (off)
Test Condition: 600V, 15A, 56Ohm, 15V
Gate Charge: 85 nC
Current - Collector (Ic) (Max): 30 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 45 A
Power - Max: 110 W
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BTS442E2 BTS442E2 Infineon Technologies INFNS16405-1.pdf?t.download=true&u=5oefqw description Description: BTS442 - PROFET - SMART HIGH SID
Features: Auto Restart, Status Flag
Packaging: Bulk
Package / Case: TO-220-5 Formed Leads
Output Type: N-Channel
Mounting Type: Through Hole
Number of Outputs: 1
Interface: Logic
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 15mOhm
Input Type: Non-Inverting
Voltage - Load: 4.5V ~ 42V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 21A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-TO220-5-11
Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, Over Voltage
Part Status: Active
Produkt ist nicht verfügbar
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IKW75N60TXK IKW75N60TXK Infineon Technologies INFNS30104-1.pdf?t.download=true&u=5oefqw Description: IKW75N60 - DISCRETE IGBT WITH AN
Packaging: Bulk
Part Status: Active
Produkt ist nicht verfügbar
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IKW75N60H3 Infineon Technologies INFNS17451-1.pdf?t.download=true&u=5oefqw Description: IKW75N60 - DISCRETE IGBT WITH AN
Power - Max: 428 W
Current - Collector Pulsed (Icm): 225 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 80 A
Part Status: Active
Gate Charge: 470 nC
Test Condition: 400V, 75A, 5.2Ohm, 15V
Switching Energy: 3mJ (on), 1.7mJ (off)
Td (on/off) @ 25°C: 31ns/265ns
IGBT Type: Trench Field Stop
Supplier Device Package: PG-TO247-3-41
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 75A
Reverse Recovery Time (trr): 190 ns
Input Type: Standard
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Bulk
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IKW75N60TA IKW75N60TA Infineon Technologies INFN-S-A0000110253-1.pdf?t.download=true&u=5oefqw Description: IKW75N60 - AUTOMOTIVE IGBT DISCR
Power - Max: 428 W
Current - Collector Pulsed (Icm): 225 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 80 A
Part Status: Active
Gate Charge: 470 nC
Test Condition: 400V, 75A, 5Ohm, 15V
Switching Energy: 2mJ (on), 2.5mJ (off)
Td (on/off) @ 25°C: 33ns/330ns
IGBT Type: Trench Field Stop
Supplier Device Package: PG-TO247-3-41
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 75A
Reverse Recovery Time (trr): 121 ns
Input Type: Standard
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Bulk
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XMC4104Q48K128AB XMC4104Q48K128AB Infineon Technologies Infineon-XMC4100_XMC4200_DS-DS-v01_04-EN.pdf?fileId=5546d462696dbf120169817056f938ff&redirId=115292 Description: 32-BIT MCU XMC4000 ARM CORTEX-M4
Core Processor: ARM® Cortex®-M4
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 125°C (TA)
RAM Size: 20K x 8
Program Memory Size: 128KB (128K x 8)
Speed: 80MHz
Mounting Type: Surface Mount
Package / Case: 48-VFQFN Exposed Pad
Packaging: Bulk
Number of I/O: 30
Part Status: Active
Supplier Device Package: 48-VQFN (7x7)
Peripherals: DMA, I²S, LED, POR, PWM, WDT
Connectivity: I²C, LINbus, SPI, UART/USART
Voltage - Supply (Vcc/Vdd): 3.13V ~ 3.63V
Core Size: 32-Bit
Data Converters: A/D 9x12b SAR; D/A 2x12b
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XMC4100Q48K128BAXUMA1 XMC4100Q48K128BAXUMA1 Infineon Technologies Infineon-XMC4100_XMC4200_DS-DS-v01_04-EN.pdf?fileId=5546d462696dbf120169817056f938ff Description: IC MCU 32BIT 128KB FLASH 48VQFN
Packaging: Cut Tape (CT)
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 80MHz
Program Memory Size: 128KB (128K x 8)
RAM Size: 20K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M4
Data Converters: A/D 9x12b; D/A 2x12b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 3.13V ~ 3.63V
Connectivity: CANbus, I2C, LINbus, SPI, UART/USART, USB
Peripherals: DMA, I2S, LED, POR, PWM, WDT
Supplier Device Package: PG-VQFN-48-53
Part Status: Active
Number of I/O: 21
DigiKey Programmable: Not Verified
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100+7.6 EUR
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XMC4108F64K64ABXQMA1 XMC4108F64K64ABXQMA1 Infineon Technologies Infineon-XMC4100_XMC4200_DS-DS-v01_04-EN.pdf?fileId=5546d462696dbf120169817056f938ff Description: IC MCU 32BIT 64KB FLASH 64LQFP
DigiKey Programmable: Not Verified
Number of I/O: 35
Supplier Device Package: PG-LQFP-64-19
Peripherals: DMA, I2S, LED, POR, PWM, WDT
Connectivity: CANbus, I2C, LINbus, SPI, UART/USART, USB
Voltage - Supply (Vcc/Vdd): 3.13V ~ 3.63V
Core Size: 32-Bit
Data Converters: A/D 10x12b; D/A 2x12b
Core Processor: ARM® Cortex®-M4
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 125°C (TA)
RAM Size: 20K x 8
Program Memory Size: 64KB (64K x 8)
Speed: 80MHz
Mounting Type: Surface Mount
Package / Case: 64-LQFP Exposed Pad
Packaging: Tray
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IGW50N60H3 IGW50N60H3 Infineon Technologies INFNS29952-1.pdf?t.download=true&u=5oefqw Description: IGW50N60 - DISCRETE IGBT WITHOUT
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IKW50N60H3 IKW50N60H3 Infineon Technologies INFNS30194-1.pdf?t.download=true&u=5oefqw Description: IKW50N60 - DISCRETE IGBT WITH AN
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KITXMCDPEXP01TOBO1 KITXMCDPEXP01TOBO1 Infineon Technologies Infineon-XMC_Digital_Power_Explorer_Kit-PB-v01_00-EN.pdf?fileId=5546d4624cb7f111014d567253657a33 Description: XMC DIGITAL POWER EXPLORER KIT
Part Status: Active
Platform: XMC Digital Power Explorer
Utilized IC / Part: XMC1300, XMC4200
Board Type: Evaluation Platform
Core Processor: ARM® Cortex®-M0, Cortex®-M4F
Contents: Board(s)
Type: MCU 32-Bit
Mounting Type: Fixed
Packaging: Box
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DEMO850W12VDC230VACTOBO1 DEMO850W12VDC230VACTOBO1 Infineon Technologies Infineon-XMC1000_Datasheet_Addendum-DS-v01_00-EN.pdf?fileId=5546d46253a864fe0153cce7c2ee0312 Description: DEV KIT
Part Status: Active
Utilized IC / Part: XMC1300
Board Type: Single Board Computers (SBC)
Core Processor: ARM® Cortex®-M0
Contents: Board(s)
Type: MCU
Mounting Type: Fixed
Packaging: Bulk
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IPD036N04LGATMA1 IPD036N04LGATMA1 Infineon Technologies Infineon-IPD036N04L-DS-v01_00-en.pdf?fileId=db3a3043163797a6011643476a6505a5 Description: MOSFET N-CH 40V 90A TO252-31
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 3.6mOhm @ 90A, 10V
Power Dissipation (Max): 94W (Tc)
Vgs(th) (Max) @ Id: 2V @ 45µA
Supplier Device Package: PG-TO252-3-11
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 78 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6300 pF @ 20 V
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500+1.07 EUR
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BSZ028N04LSATMA1 BSZ028N04LSATMA1 Infineon Technologies Infineon-BSZ028N04LS-DS-v02_01-EN.pdf?fileId=db3a304342371bb001424bb10c8b6fff Description: MOSFET N-CH 40V 21A/40A TSDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs: 2.8mOhm @ 20A, 10V
Power Dissipation (Max): 2.1W (Ta), 63W (Tc)
Supplier Device Package: PG-TSDSON-8-FL
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2300 pF @ 20 V
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500+0.79 EUR
1000+0.72 EUR
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IKW50N65F5 IKW50N65F5 Infineon Technologies Part_Number_Guide_Web.pdf Description: IGBT 650V 80A 305W PG-TO247-3
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IPW60R031CFD7 Infineon Technologies Description: 600V COOLMOS N-CHANNEL POWER MOS
Package / Case: TO-247-3
Packaging: Bulk
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PG-TO247-3
Vgs(th) (Max) @ Id: 4.5V @ 1.63mA
Power Dissipation (Max): 278W (Tc)
Rds On (Max) @ Id, Vgs: 31mOhm @ 32.6A, 10V
Current - Continuous Drain (Id) @ 25°C: 63A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Input Capacitance (Ciss) (Max) @ Vds: 5623 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 141 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
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PTMA210452FL V1 R250 Infineon Technologies PTMA210452E_FL.pdf Description: IC AMP W-CDMA 1.9-2.2GHZ H34265
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BFP540ESDH6327XTSA1 BFP540ESDH6327XTSA1 Infineon Technologies Infineon-BFP540ESD-DS-v02_00-EN.pdf?fileId=5546d462689a790c01690f0382ea3920 Description: RF TRANS NPN 5V 30GHZ PG-SOT-343
Packaging: Tape & Reel (TR)
Package / Case: SC-82A, SOT-343
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 21.5dB
Power - Max: 250mW
Current - Collector (Ic) (Max): 80mA
Voltage - Collector Emitter Breakdown (Max): 5V
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 20mA, 3.5V
Frequency - Transition: 30GHz
Noise Figure (dB Typ @ f): 0.9dB ~ 1.4dB @ 1.8GHz
Supplier Device Package: PG-SOT343-3D
Part Status: Active
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BFP540ESDH6327XTSA1 BFP540ESDH6327XTSA1 Infineon Technologies Infineon-BFP540ESD-DS-v02_00-EN.pdf?fileId=5546d462689a790c01690f0382ea3920 Description: RF TRANS NPN 5V 30GHZ PG-SOT-343
Packaging: Cut Tape (CT)
Package / Case: SC-82A, SOT-343
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 21.5dB
Power - Max: 250mW
Current - Collector (Ic) (Max): 80mA
Voltage - Collector Emitter Breakdown (Max): 5V
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 20mA, 3.5V
Frequency - Transition: 30GHz
Noise Figure (dB Typ @ f): 0.9dB ~ 1.4dB @ 1.8GHz
Supplier Device Package: PG-SOT343-3D
Part Status: Active
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BFP540FESDH6327XTSA1 BFP540FESDH6327XTSA1 Infineon Technologies Infineon-BFP540FESD-DS-v02_00-EN.pdf?fileId=5546d462689a790c01690f038cf33922 Description: RF TRANS NPN 5V 30GHZ 4-TSFP
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, Flat Leads
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 20dB
Power - Max: 250mW
Current - Collector (Ic) (Max): 80mA
Voltage - Collector Emitter Breakdown (Max): 5V
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 20mA, 3.5V
Frequency - Transition: 30GHz
Noise Figure (dB Typ @ f): 0.9dB ~ 1.4dB @ 1.8GHz
Supplier Device Package: 4-TSFP
Part Status: Active
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BFP540FESDH6327XTSA1 BFP540FESDH6327XTSA1 Infineon Technologies Infineon-BFP540FESD-DS-v02_00-EN.pdf?fileId=5546d462689a790c01690f038cf33922 Description: RF TRANS NPN 5V 30GHZ 4-TSFP
Packaging: Cut Tape (CT)
Package / Case: 4-SMD, Flat Leads
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 20dB
Power - Max: 250mW
Current - Collector (Ic) (Max): 80mA
Voltage - Collector Emitter Breakdown (Max): 5V
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 20mA, 3.5V
Frequency - Transition: 30GHz
Noise Figure (dB Typ @ f): 0.9dB ~ 1.4dB @ 1.8GHz
Supplier Device Package: 4-TSFP
Part Status: Active
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TLE4983CHTNE6815HAMA1 Infineon Technologies fundamentals-of-power-semiconductors Description: MAG SWITCH SPEED SENSOR 3SSO
Packaging: Bulk
Grade: Automotive
Qualification: AEC-Q100
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IGW30N60TP IGW30N60TP Infineon Technologies INFN-S-A0002837998-1.pdf?t.download=true&u=5oefqw Description: IGW30N60 - DISCRETE IGBT WITHOUT
Power - Max: 200 W
Current - Collector Pulsed (Icm): 90 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 53 A
Part Status: Active
Gate Charge: 130 nC
Test Condition: 400V, 30A, 10.5Ohm, 15V
Switching Energy: 710µJ (on), 420µJ (off)
Td (on/off) @ 25°C: 15ns/179ns
IGBT Type: Trench Field Stop
Supplier Device Package: PG-TO247-3
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 30A
Input Type: Standard
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Bulk
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IGW30N60T IGW30N60T Infineon Technologies INFN-S-A0001299666-1.pdf?t.download=true&u=5oefqw Description: IGW30N60 - DISCRETE IGBT WITHOUT
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TLF42772ELXUMA2 TLF42772ELXUMA2 Infineon Technologies Infineon-TLF4277-2EL-DS-v01_00-EN.pdf?fileId=5546d46259d9a4bf0159f9e999fd3f16 Description: IC REG LIN POS ADJ PG-SSOP-14-EP
Packaging: Tape & Reel (TR)
Package / Case: 14-LSSOP (0.154", 3.90mm Width) Exposed Pad
Output Type: Adjustable
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 200 µA
Voltage - Input (Max): 40V
Number of Regulators: 1
Supplier Device Package: PG-SSOP-14-EP
Voltage - Output (Max): 12V
Voltage - Output (Min/Fixed): 5V
Control Features: Enable
Part Status: Active
PSRR: 65dB (100Hz)
Voltage Dropout (Max): 0.5V @ 200mA
Protection Features: Over Current, Over Temperature, Over Voltage, Reverse Polarity, Short Circuit
Current - Supply (Max): 11 mA
Grade: Automotive
Qualification: AEC-Q100
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2500+1.49 EUR
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TLF42772ELXUMA2 TLF42772ELXUMA2 Infineon Technologies Infineon-TLF4277-2EL-DS-v01_00-EN.pdf?fileId=5546d46259d9a4bf0159f9e999fd3f16 Description: IC REG LIN POS ADJ PG-SSOP-14-EP
Packaging: Cut Tape (CT)
Package / Case: 14-LSSOP (0.154", 3.90mm Width) Exposed Pad
Output Type: Adjustable
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 200 µA
Voltage - Input (Max): 40V
Number of Regulators: 1
Supplier Device Package: PG-SSOP-14-EP
Voltage - Output (Max): 12V
Voltage - Output (Min/Fixed): 5V
Control Features: Enable
Part Status: Active
PSRR: 65dB (100Hz)
Voltage Dropout (Max): 0.5V @ 200mA
Protection Features: Over Current, Over Temperature, Over Voltage, Reverse Polarity, Short Circuit
Current - Supply (Max): 11 mA
Grade: Automotive
Qualification: AEC-Q100
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TLF4277ELXUMA1 TLF4277ELXUMA1 Infineon Technologies Infineon-TLF4277EL-DS-v01_02-EN.pdf?fileId=5546d46259d9a4bf0159f9fab6363f26 Description: IC PWR SPLY MONITR/OVRVLT 14SSOP
DigiKey Programmable: Not Verified
Supplier Device Package: PG-SSOP-14-EP
Applications: Power Supply Monitor, Overvoltage Protection
Operating Temperature: -40°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: 14-LSSOP (0.154", 3.90mm Width) Exposed Pad
Packaging: Cut Tape (CT)
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IPD30N06S3L-20 IPD30N06S3L-20 Infineon Technologies INFNS11196-1.pdf?t.download=true&u=5oefqw Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ 17A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 20µA
Supplier Device Package: PG-TO252-3-11
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2600 pF @ 25 V
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IAUZ30N06S5L140ATMA1 IAUZ30N06S5L140ATMA1 Infineon Technologies Infineon-IAUZ30N06S5L140-DataSheet-v01_00-EN.pdf?fileId=5546d46271bf4f920171f471819e61b6 Description: MOSFET N-CH 60V 30A TSDSON-8-32
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tj)
Rds On (Max) @ Id, Vgs: 14mOhm @ 15A, 10V
Power Dissipation (Max): 33W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 10µA
Supplier Device Package: PG-TSDSON-8-32
Grade: Automotive
Part Status: Active
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 12.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 888 pF @ 30 V
Qualification: AEC-Q101
auf Bestellung 30000 Stücke:
Lieferzeit 10-14 Tag (e)
5000+0.43 EUR
10000+0.4 EUR
15000+0.39 EUR
25000+0.37 EUR
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IAUZ30N06S5L140ATMA1 IAUZ30N06S5L140ATMA1 Infineon Technologies Infineon-IAUZ30N06S5L140-DataSheet-v01_00-EN.pdf?fileId=5546d46271bf4f920171f471819e61b6 Description: MOSFET N-CH 60V 30A TSDSON-8-32
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tj)
Rds On (Max) @ Id, Vgs: 14mOhm @ 15A, 10V
Power Dissipation (Max): 33W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 10µA
Supplier Device Package: PG-TSDSON-8-32
Grade: Automotive
Part Status: Active
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 12.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 888 pF @ 30 V
Qualification: AEC-Q101
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10+1.83 EUR
16+1.14 EUR
100+0.75 EUR
500+0.58 EUR
1000+0.53 EUR
2000+0.48 EUR
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IRG4PC20UPBF IRG4PC20UPBF Infineon Technologies IRG4PC20UPbF.pdf Description: IGBT 600V 13A 60W TO247AC
Power - Max: 60 W
Current - Collector Pulsed (Icm): 52 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 13 A
Gate Charge: 27 nC
Test Condition: 480V, 6.5A, 50Ohm, 15V
Switching Energy: 100µJ (on), 120µJ (off)
Td (on/off) @ 25°C: 21ns/86ns
Supplier Device Package: TO-247AC
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 6.5A
Input Type: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Bag
Produkt ist nicht verfügbar
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1EDI2002ASXUMA2 1EDI2002ASXUMA2 Infineon Technologies 1EDI2002AS-ISO-DS-v03_20.pdf Description: DGT ISO 3.75KV 1CH GT DVR DSO36
Mounting Type: Surface Mount
Package / Case: 36-BSSOP (0.295", 7.50mm Width)
Packaging: Tape & Reel (TR)
Voltage - Output Supply: 13V ~ 18V
Number of Channels: 1
Part Status: Active
Rise / Fall Time (Typ): 30ns, 60ns
Supplier Device Package: PG-DSO-36-63
Voltage - Isolation: 3750Vrms
Current - Output High, Low: 1A, 1A
Technology: Magnetic Coupling
Operating Temperature: -40°C ~ 150°C (TJ)
Qualification: AEC-Q100
Grade: Automotive
auf Bestellung 2000 Stücke:
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1000+9.35 EUR
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SAK-C167CR-LM-ES-HA SAK-C167CR-LM-ES-HA Infineon Technologies SIEMS00488-1.pdf?t.download=true&u=5oefqw Description: LEGACY 16-BIT MCU
Packaging: Bulk
Program Memory Type: ROMless
Oscillator Type: External
Operating Temperature: -40°C ~ 125°C (TA)
RAM Size: 4K x 8
Speed: 25MHz
Mounting Type: Surface Mount
Package / Case: 144-BQFP
Number of I/O: 111
Part Status: Active
Supplier Device Package: P-MQFP-144-8
Peripherals: POR, PWM, WDT
Connectivity: CANbus, EBI/EMI, SPI, UART/USART
Voltage - Supply (Vcc/Vdd): 4.5V ~ 5.5V
Core Size: 16-Bit
Data Converters: A/D 16x10b SAR
Core Processor: C166
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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SAK-C167CRLMHAKXQLA1 Infineon Technologies Description: LEGACY 16-BIT MCU
Part Status: Active
Packaging: Bulk
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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IPP65R280C6 INFNS16437-1.pdf?t.download=true&u=5oefqw
IPP65R280C6
Hersteller: Infineon Technologies
Description: POWER FIELD-EFFECT TRANSISTOR, 6
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13.8A (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 4.4A, 10V
Power Dissipation (Max): 104W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 440µA
Supplier Device Package: PG-TO220-3-1
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 950 pF @ 100 V
Produkt ist nicht verfügbar
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IPI65R280C6 INFN-S-A0004583427-1.pdf?t.download=true&u=5oefqw
IPI65R280C6
Hersteller: Infineon Technologies
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13.8A (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 4.4A, 10V
Power Dissipation (Max): 104W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 440µA
Supplier Device Package: PG-TO262-3-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 950 pF @ 100 V
auf Bestellung 500 Stücke:
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AnzahlPreis
260+1.88 EUR
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IPI65R280C6XKSA1 IPI65R280C6_2_0.pdf?folderId=db3a3043163797a6011637d4bae7003b&fileId=db3a30432a7fedfc012a8ac1e7c758cf
IPI65R280C6XKSA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 650V 13.8A TO262-3
Packaging: Bulk
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13.8A (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 4.4A, 10V
Power Dissipation (Max): 104W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 440µA
Supplier Device Package: PG-TO262-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 950 pF @ 100 V
auf Bestellung 500 Stücke:
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AnzahlPreis
176+2.57 EUR
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IPB65R280E6 INFNS16656-1.pdf?t.download=true&u=5oefqw
IPB65R280E6
Hersteller: Infineon Technologies
Description: OPTLMOS N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13.8A (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 4.4A, 10V
Power Dissipation (Max): 104W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 440µA
Supplier Device Package: PG-TO263-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 950 pF @ 100 V
Produkt ist nicht verfügbar
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IPW65R280C6 INFN-S-A0004583427-1.pdf?t.download=true&u=5oefqw
IPW65R280C6
Hersteller: Infineon Technologies
Description: 650 V COOLMOS E6 POWER MOSFET
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13.8A (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 4.4A, 10V
Power Dissipation (Max): 104W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 440µA
Supplier Device Package: PG-TO247-3-41
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 950 pF @ 100 V
auf Bestellung 466 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
194+2.51 EUR
Mindestbestellmenge: 194 Stücke
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IPW65R280E6FKSA1 IPW65R280E6_2_1.pdf?folderId=db3a3043163797a6011637d4bae7003b&fileId=db3a30432a7fedfc012a9e4d5aa80758
IPW65R280E6FKSA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 650V 13.8A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13.8A (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 4.4A, 10V
Power Dissipation (Max): 104W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 440µA
Supplier Device Package: PG-TO247-3-1
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 950 pF @ 100 V
auf Bestellung 200 Stücke:
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AnzahlPreis
170+2.68 EUR
Mindestbestellmenge: 170 Stücke
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IPW65R280E6 INFN-S-A0004457106-1.pdf?t.download=true&u=5oefqw
IPW65R280E6
Hersteller: Infineon Technologies
Description: 650 V COOLMOS E6 POWER MOSFET
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13.8A (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 4.4A, 10V
Power Dissipation (Max): 104W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 440µA
Supplier Device Package: PG-TO247-3-41
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 950 pF @ 100 V
Produkt ist nicht verfügbar
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IPP048N04NG INFNS15602-1.pdf?t.download=true&u=5oefqw
IPP048N04NG
Hersteller: Infineon Technologies
Description: IPP048N04 - 12V-300V N-CHANNEL P
Produkt ist nicht verfügbar
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IFX1117MEVHTMA1 IFX1117_Rev1.0_2-24-11.pdf
IFX1117MEVHTMA1
Hersteller: Infineon Technologies
Description: IC REG LIN POS ADJ 1A SOT223-4
Voltage - Output (Max): 13.6V
Supplier Device Package: PG-SOT223-4-21
Number of Regulators: 1
Voltage - Input (Max): 15V
Current - Quiescent (Iq): 5 mA
Output Configuration: Positive
Operating Temperature: 0°C ~ 125°C
Current - Output: 1A
Mounting Type: Surface Mount
Output Type: Adjustable
Package / Case: TO-261-4, TO-261AA
Packaging: Bulk
Protection Features: Over Current, Over Temperature, Short Circuit
Voltage Dropout (Max): 1.4V @ 1A
PSRR: 70dB (120Hz)
Voltage - Output (Min/Fixed): 1.25V
auf Bestellung 7981 Stücke:
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AnzahlPreis
961+0.52 EUR
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BCR129E6327 INFNS17180-1.pdf?t.download=true&u=5oefqw
BCR129E6327
Hersteller: Infineon Technologies
Description: BCR129 - DIGITAL TRANSISTOR
Resistor - Base (R1): 10 kOhms
Frequency - Transition: 150 MHz
Power - Max: 200 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Active
Supplier Device Package: PG-SOT23-3-11
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 5mA, 5V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Transistor Type: NPN - Pre-Biased
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Bulk
Produkt ist nicht verfügbar
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IPW65R095C7
IPW65R095C7
Hersteller: Infineon Technologies
Description: MOSFET N-CH 650V 24A TO247
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 95mOhm @ 11.8A, 10V
Power Dissipation (Max): 128W (Tc)
Vgs(th) (Max) @ Id: 4V @ 590µA
Supplier Device Package: PG-TO247
Part Status: Active
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2140 pF @ 400 V
Produkt ist nicht verfügbar
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IPD90N04S3-04 INFNS10879-1.pdf?t.download=true&u=5oefqw
IPD90N04S3-04
Hersteller: Infineon Technologies
Description: OPTLMOS N-CHANNEL POWER MOSFET
Vgs(th) (Max) @ Id: 4V @ 90µA
Power Dissipation (Max): 136W (Tc)
Rds On (Max) @ Id, Vgs: 3.6mOhm @ 80A, 10V
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Bulk
Input Capacitance (Ciss) (Max) @ Vds: 5200 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PG-TO252-3-11
Produkt ist nicht verfügbar
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IPB0401NM5SATMA1
Hersteller: Infineon Technologies
Description: TRENCH >=100V
Packaging: Tape & Reel (TR)
Part Status: Active
Produkt ist nicht verfügbar
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TLE6251DSXT Infineon-TLE6251DS-DS-v03_10-EN.pdf?fileId=5546d46259d9a4bf015a3d2d98f4606e
TLE6251DSXT
Hersteller: Infineon Technologies
Description: IC TRANSCEIVER FULL 1/1 DSO-8
Part Status: Active
Duplex: Full
Receiver Hysteresis: 200 mV
Supplier Device Package: PG-DSO-8-16
Protocol: CANbus
Data Rate: 1MBd
Number of Drivers/Receivers: 1/1
Voltage - Supply: 4.75V ~ 5.25V
Operating Temperature: -40°C ~ 150°C (TJ)
Type: Transceiver
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Bulk
Produkt ist nicht verfügbar
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TLE6251DXUMA2 Infineon-TLE6251D-DS-v01_10-EN.pdf?fileId=5546d46259d9a4bf015a3d2d680b605d
TLE6251DXUMA2
Hersteller: Infineon Technologies
Description: IC TRANSCEIVER FULL 1/1 PGDSO816
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Type: Transceiver
Operating Temperature: -40°C ~ 150°C
Voltage - Supply: 4.75V ~ 5.25V
Number of Drivers/Receivers: 1/1
Data Rate: 1MBd
Protocol: CANbus
Supplier Device Package: PG-DSO-8-16
Receiver Hysteresis: 200 mV
Duplex: Full
Part Status: Active
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
2500+1.22 EUR
Mindestbestellmenge: 2500 Stücke
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TLE6251DXUMA2 Infineon-TLE6251D-DS-v01_10-EN.pdf?fileId=5546d46259d9a4bf015a3d2d680b605d
TLE6251DXUMA2
Hersteller: Infineon Technologies
Description: IC TRANSCEIVER FULL 1/1 PGDSO816
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Type: Transceiver
Operating Temperature: -40°C ~ 150°C
Voltage - Supply: 4.75V ~ 5.25V
Number of Drivers/Receivers: 1/1
Data Rate: 1MBd
Protocol: CANbus
Supplier Device Package: PG-DSO-8-16
Receiver Hysteresis: 200 mV
Duplex: Full
Part Status: Active
auf Bestellung 3330 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
8+2.45 EUR
10+1.79 EUR
25+1.63 EUR
100+1.44 EUR
250+1.36 EUR
500+1.31 EUR
1000+1.3 EUR
Mindestbestellmenge: 8 Stücke
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TLE6251DS Infineon-TLE6251-2G-DS-v01_22-EN.pdf?fileId=5546d4625996c0c30159a766fb9977b8
TLE6251DS
Hersteller: Infineon Technologies
Description: IC TRANSCEIVER FULL 1/1 DSO-8
Packaging: Bulk
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Type: Transceiver
Operating Temperature: -40°C ~ 150°C
Voltage - Supply: 4.75V ~ 5.25V
Number of Drivers/Receivers: 1/1
Data Rate: 1MBd
Protocol: CANbus
Supplier Device Package: PG-DSO-8-16
Receiver Hysteresis: 200 mV
Duplex: Full
Part Status: Active
Produkt ist nicht verfügbar
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REFILD8150DC15ATOBO1 Infineon-Reference_design_REF_ILD8150_DC_1.5A_high_frequency_operation-ApplicationNotes-v01_00-EN.pdf?fileId=5546d4626d66c2b1016d73f768f820ae
REFILD8150DC15ATOBO1
Hersteller: Infineon Technologies
Description: EVAL BOARD FOR ILD8150
Features: Dimmable
Packaging: Box
Voltage - Input: 8V ~ 80V
Contents: Board(s)
Current - Output / Channel: 1.5A
Utilized IC / Part: ILD8150
Supplied Contents: Board(s)
Outputs and Type: 1 Non-Isolated Output
Part Status: Active
auf Bestellung 4 Stücke:
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AnzahlPreis
1+129.89 EUR
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BSC430N25NSFDATMA1 Infineon-BSC430N25NSFD-DS-v02_01-EN.pdf?fileId=5546d462689a790c0168c7d453686447
BSC430N25NSFDATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 250V TSON-8
Vgs (Max): ±20V
Part Status: Active
Supplier Device Package: PG-TSON-8-3
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
Drain to Source Voltage (Vdss): 250 V
Produkt ist nicht verfügbar
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BSC430N25NSFDATMA1 Infineon-BSC430N25NSFD-DS-v02_01-EN.pdf?fileId=5546d462689a790c0168c7d453686447
BSC430N25NSFDATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 250V TSON-8
Drain to Source Voltage (Vdss): 250 V
Vgs (Max): ±20V
Part Status: Active
Supplier Device Package: PG-TSON-8-3
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
auf Bestellung 82 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
3+8.06 EUR
10+5.37 EUR
Mindestbestellmenge: 3 Stücke
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SFH756 SFH756_756V.pdf
Hersteller: Infineon Technologies
Description: XMITTER FIBER OPTIC 660NM
Current - DC Forward (If) (Max): 50 mA
Voltage - DC Reverse (Vr) (Max): 3 V
Capacitance: 30 pF
Spectral Bandwidth: 25nm
Voltage - Forward (Vf) (Typ): 2.1V
Wavelength: 660nm
Packaging: Bulk
auf Bestellung 3691 Stücke:
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84+5.43 EUR
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CY7C1460SV25-250BZC
CY7C1460SV25-250BZC
Hersteller: Infineon Technologies
Description: IC SRAM 36MBIT PARALLEL 165FBGA
auf Bestellung 675 Stücke:
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AnzahlPreis
6+85.16 EUR
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TLE4906L Infineon-TLE4906-DS-v02_00-en.pdf?fileId=db3a304316f66ee8011754425fe50642
TLE4906L
Hersteller: Infineon Technologies
Description: TLE4906 - HALL SWITCH
Part Status: Active
Test Condition: 25°C
Supplier Device Package: PG-SSO-3-2
Current - Supply (Max): 6mA
Current - Output (Max): 20mA
Sensing Range: 13.5mT Trip, 5mT Release
Technology: Hall Effect
Voltage - Supply: 2.7V ~ 18V
Operating Temperature: -40°C ~ 150°C (TJ)
Function: Unipolar Switch
Mounting Type: Through Hole
Polarization: South Pole
Output Type: Open Collector
Package / Case: 3-SSIP, SSO-3-02
Features: Temperature Compensated
Packaging: Bulk
Produkt ist nicht verfügbar
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IAUZ40N06S5N050ATMA1 Infineon-IAUZ40N06S5N050-DataSheet-v01_00-EN.pdf?fileId=5546d46271bf4f920171f47191a561b9
IAUZ40N06S5N050ATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 60V 40A TSDSON-8-33
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tj)
Rds On (Max) @ Id, Vgs: 5mOhm @ 20A, 10V
Power Dissipation (Max): 71W (Tc)
Vgs(th) (Max) @ Id: 3.4V @ 29µA
Supplier Device Package: PG-TSDSON-8-33
Part Status: Active
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 30.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 30 V
Grade: Automotive
Qualification: AEC-Q101
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AnzahlPreis
5000+0.7 EUR
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IAUZ40N06S5N050ATMA1 Infineon-IAUZ40N06S5N050-DataSheet-v01_00-EN.pdf?fileId=5546d46271bf4f920171f47191a561b9
IAUZ40N06S5N050ATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 60V 40A TSDSON-8-33
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tj)
Rds On (Max) @ Id, Vgs: 5mOhm @ 20A, 10V
Power Dissipation (Max): 71W (Tc)
Vgs(th) (Max) @ Id: 3.4V @ 29µA
Supplier Device Package: PG-TSDSON-8-33
Grade: Automotive
Part Status: Active
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 30.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 30 V
Qualification: AEC-Q101
auf Bestellung 8254 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
7+2.75 EUR
11+1.74 EUR
100+1.16 EUR
500+0.92 EUR
1000+0.84 EUR
2000+0.77 EUR
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IPP040N06N3G INFNS17005-1.pdf?t.download=true&u=5oefqw
IPP040N06N3G
Hersteller: Infineon Technologies
Description: POWER FIELD-EFFECT TRANSISTOR, 9
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 130A (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 90A, 10V
Power Dissipation (Max): 188W (Tc)
Vgs(th) (Max) @ Id: 4V @ 90µA
Supplier Device Package: PG-TO220-3-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 98 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11000 pF @ 30 V
Produkt ist nicht verfügbar
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IGW15T120 INFNS14050-1.pdf?t.download=true&u=5oefqw
IGW15T120
Hersteller: Infineon Technologies
Description: IGW15T120 - DISCRETE IGBT WITHOU
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 15A
Supplier Device Package: PG-TO247-3-21
Td (on/off) @ 25°C: 50ns/520ns
Switching Energy: 1.3mJ (on), 1.4mJ (off)
Test Condition: 600V, 15A, 56Ohm, 15V
Gate Charge: 85 nC
Current - Collector (Ic) (Max): 30 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 45 A
Power - Max: 110 W
auf Bestellung 7690 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
136+3.56 EUR
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BTS442E2 description INFNS16405-1.pdf?t.download=true&u=5oefqw
BTS442E2
Hersteller: Infineon Technologies
Description: BTS442 - PROFET - SMART HIGH SID
Features: Auto Restart, Status Flag
Packaging: Bulk
Package / Case: TO-220-5 Formed Leads
Output Type: N-Channel
Mounting Type: Through Hole
Number of Outputs: 1
Interface: Logic
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 15mOhm
Input Type: Non-Inverting
Voltage - Load: 4.5V ~ 42V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 21A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-TO220-5-11
Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, Over Voltage
Part Status: Active
Produkt ist nicht verfügbar
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IKW75N60TXK INFNS30104-1.pdf?t.download=true&u=5oefqw
IKW75N60TXK
Hersteller: Infineon Technologies
Description: IKW75N60 - DISCRETE IGBT WITH AN
Packaging: Bulk
Part Status: Active
Produkt ist nicht verfügbar
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IKW75N60H3 INFNS17451-1.pdf?t.download=true&u=5oefqw
Hersteller: Infineon Technologies
Description: IKW75N60 - DISCRETE IGBT WITH AN
Power - Max: 428 W
Current - Collector Pulsed (Icm): 225 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 80 A
Part Status: Active
Gate Charge: 470 nC
Test Condition: 400V, 75A, 5.2Ohm, 15V
Switching Energy: 3mJ (on), 1.7mJ (off)
Td (on/off) @ 25°C: 31ns/265ns
IGBT Type: Trench Field Stop
Supplier Device Package: PG-TO247-3-41
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 75A
Reverse Recovery Time (trr): 190 ns
Input Type: Standard
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Bulk
Produkt ist nicht verfügbar
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IKW75N60TA INFN-S-A0000110253-1.pdf?t.download=true&u=5oefqw
IKW75N60TA
Hersteller: Infineon Technologies
Description: IKW75N60 - AUTOMOTIVE IGBT DISCR
Power - Max: 428 W
Current - Collector Pulsed (Icm): 225 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 80 A
Part Status: Active
Gate Charge: 470 nC
Test Condition: 400V, 75A, 5Ohm, 15V
Switching Energy: 2mJ (on), 2.5mJ (off)
Td (on/off) @ 25°C: 33ns/330ns
IGBT Type: Trench Field Stop
Supplier Device Package: PG-TO247-3-41
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 75A
Reverse Recovery Time (trr): 121 ns
Input Type: Standard
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Bulk
Produkt ist nicht verfügbar
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XMC4104Q48K128AB Infineon-XMC4100_XMC4200_DS-DS-v01_04-EN.pdf?fileId=5546d462696dbf120169817056f938ff&redirId=115292
XMC4104Q48K128AB
Hersteller: Infineon Technologies
Description: 32-BIT MCU XMC4000 ARM CORTEX-M4
Core Processor: ARM® Cortex®-M4
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 125°C (TA)
RAM Size: 20K x 8
Program Memory Size: 128KB (128K x 8)
Speed: 80MHz
Mounting Type: Surface Mount
Package / Case: 48-VFQFN Exposed Pad
Packaging: Bulk
Number of I/O: 30
Part Status: Active
Supplier Device Package: 48-VQFN (7x7)
Peripherals: DMA, I²S, LED, POR, PWM, WDT
Connectivity: I²C, LINbus, SPI, UART/USART
Voltage - Supply (Vcc/Vdd): 3.13V ~ 3.63V
Core Size: 32-Bit
Data Converters: A/D 9x12b SAR; D/A 2x12b
Produkt ist nicht verfügbar
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XMC4100Q48K128BAXUMA1 Infineon-XMC4100_XMC4200_DS-DS-v01_04-EN.pdf?fileId=5546d462696dbf120169817056f938ff
XMC4100Q48K128BAXUMA1
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 128KB FLASH 48VQFN
Packaging: Cut Tape (CT)
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 80MHz
Program Memory Size: 128KB (128K x 8)
RAM Size: 20K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M4
Data Converters: A/D 9x12b; D/A 2x12b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 3.13V ~ 3.63V
Connectivity: CANbus, I2C, LINbus, SPI, UART/USART, USB
Peripherals: DMA, I2S, LED, POR, PWM, WDT
Supplier Device Package: PG-VQFN-48-53
Part Status: Active
Number of I/O: 21
DigiKey Programmable: Not Verified
auf Bestellung 1727 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
2+11.62 EUR
10+8.98 EUR
25+8.33 EUR
100+7.6 EUR
250+7.26 EUR
500+7.05 EUR
1000+6.88 EUR
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XMC4108F64K64ABXQMA1 Infineon-XMC4100_XMC4200_DS-DS-v01_04-EN.pdf?fileId=5546d462696dbf120169817056f938ff
XMC4108F64K64ABXQMA1
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 64KB FLASH 64LQFP
DigiKey Programmable: Not Verified
Number of I/O: 35
Supplier Device Package: PG-LQFP-64-19
Peripherals: DMA, I2S, LED, POR, PWM, WDT
Connectivity: CANbus, I2C, LINbus, SPI, UART/USART, USB
Voltage - Supply (Vcc/Vdd): 3.13V ~ 3.63V
Core Size: 32-Bit
Data Converters: A/D 10x12b; D/A 2x12b
Core Processor: ARM® Cortex®-M4
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 125°C (TA)
RAM Size: 20K x 8
Program Memory Size: 64KB (64K x 8)
Speed: 80MHz
Mounting Type: Surface Mount
Package / Case: 64-LQFP Exposed Pad
Packaging: Tray
Produkt ist nicht verfügbar
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IGW50N60H3 INFNS29952-1.pdf?t.download=true&u=5oefqw
IGW50N60H3
Hersteller: Infineon Technologies
Description: IGW50N60 - DISCRETE IGBT WITHOUT
Produkt ist nicht verfügbar
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IKW50N60H3 INFNS30194-1.pdf?t.download=true&u=5oefqw
IKW50N60H3
Hersteller: Infineon Technologies
Description: IKW50N60 - DISCRETE IGBT WITH AN
Produkt ist nicht verfügbar
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KITXMCDPEXP01TOBO1 Infineon-XMC_Digital_Power_Explorer_Kit-PB-v01_00-EN.pdf?fileId=5546d4624cb7f111014d567253657a33
KITXMCDPEXP01TOBO1
Hersteller: Infineon Technologies
Description: XMC DIGITAL POWER EXPLORER KIT
Part Status: Active
Platform: XMC Digital Power Explorer
Utilized IC / Part: XMC1300, XMC4200
Board Type: Evaluation Platform
Core Processor: ARM® Cortex®-M0, Cortex®-M4F
Contents: Board(s)
Type: MCU 32-Bit
Mounting Type: Fixed
Packaging: Box
auf Bestellung 2 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
1+212.73 EUR
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DEMO850W12VDC230VACTOBO1 Infineon-XMC1000_Datasheet_Addendum-DS-v01_00-EN.pdf?fileId=5546d46253a864fe0153cce7c2ee0312
DEMO850W12VDC230VACTOBO1
Hersteller: Infineon Technologies
Description: DEV KIT
Part Status: Active
Utilized IC / Part: XMC1300
Board Type: Single Board Computers (SBC)
Core Processor: ARM® Cortex®-M0
Contents: Board(s)
Type: MCU
Mounting Type: Fixed
Packaging: Bulk
auf Bestellung 2 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
1+496.07 EUR
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IPD036N04LGATMA1 Infineon-IPD036N04L-DS-v01_00-en.pdf?fileId=db3a3043163797a6011643476a6505a5
IPD036N04LGATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 40V 90A TO252-31
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 3.6mOhm @ 90A, 10V
Power Dissipation (Max): 94W (Tc)
Vgs(th) (Max) @ Id: 2V @ 45µA
Supplier Device Package: PG-TO252-3-11
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 78 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6300 pF @ 20 V
auf Bestellung 37903 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
6+3.2 EUR
10+2.03 EUR
100+1.36 EUR
500+1.07 EUR
1000+0.98 EUR
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BSZ028N04LSATMA1 Infineon-BSZ028N04LS-DS-v02_01-EN.pdf?fileId=db3a304342371bb001424bb10c8b6fff
BSZ028N04LSATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 40V 21A/40A TSDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs: 2.8mOhm @ 20A, 10V
Power Dissipation (Max): 2.1W (Ta), 63W (Tc)
Supplier Device Package: PG-TSDSON-8-FL
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2300 pF @ 20 V
auf Bestellung 5045 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
8+2.39 EUR
12+1.51 EUR
100+1 EUR
500+0.79 EUR
1000+0.72 EUR
2000+0.66 EUR
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IKW50N65F5 Part_Number_Guide_Web.pdf
IKW50N65F5
Hersteller: Infineon Technologies
Description: IGBT 650V 80A 305W PG-TO247-3
Produkt ist nicht verfügbar
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IPW60R031CFD7
Hersteller: Infineon Technologies
Description: 600V COOLMOS N-CHANNEL POWER MOS
Package / Case: TO-247-3
Packaging: Bulk
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PG-TO247-3
Vgs(th) (Max) @ Id: 4.5V @ 1.63mA
Power Dissipation (Max): 278W (Tc)
Rds On (Max) @ Id, Vgs: 31mOhm @ 32.6A, 10V
Current - Continuous Drain (Id) @ 25°C: 63A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Input Capacitance (Ciss) (Max) @ Vds: 5623 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 141 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Produkt ist nicht verfügbar
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PTMA210452FL V1 R250 PTMA210452E_FL.pdf
Hersteller: Infineon Technologies
Description: IC AMP W-CDMA 1.9-2.2GHZ H34265
Produkt ist nicht verfügbar
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BFP540ESDH6327XTSA1 Infineon-BFP540ESD-DS-v02_00-EN.pdf?fileId=5546d462689a790c01690f0382ea3920
BFP540ESDH6327XTSA1
Hersteller: Infineon Technologies
Description: RF TRANS NPN 5V 30GHZ PG-SOT-343
Packaging: Tape & Reel (TR)
Package / Case: SC-82A, SOT-343
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 21.5dB
Power - Max: 250mW
Current - Collector (Ic) (Max): 80mA
Voltage - Collector Emitter Breakdown (Max): 5V
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 20mA, 3.5V
Frequency - Transition: 30GHz
Noise Figure (dB Typ @ f): 0.9dB ~ 1.4dB @ 1.8GHz
Supplier Device Package: PG-SOT343-3D
Part Status: Active
Produkt ist nicht verfügbar
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BFP540ESDH6327XTSA1 Infineon-BFP540ESD-DS-v02_00-EN.pdf?fileId=5546d462689a790c01690f0382ea3920
BFP540ESDH6327XTSA1
Hersteller: Infineon Technologies
Description: RF TRANS NPN 5V 30GHZ PG-SOT-343
Packaging: Cut Tape (CT)
Package / Case: SC-82A, SOT-343
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 21.5dB
Power - Max: 250mW
Current - Collector (Ic) (Max): 80mA
Voltage - Collector Emitter Breakdown (Max): 5V
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 20mA, 3.5V
Frequency - Transition: 30GHz
Noise Figure (dB Typ @ f): 0.9dB ~ 1.4dB @ 1.8GHz
Supplier Device Package: PG-SOT343-3D
Part Status: Active
auf Bestellung 1400 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
19+0.93 EUR
27+0.66 EUR
31+0.59 EUR
100+0.51 EUR
250+0.47 EUR
500+0.45 EUR
1000+0.43 EUR
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BFP540FESDH6327XTSA1 Infineon-BFP540FESD-DS-v02_00-EN.pdf?fileId=5546d462689a790c01690f038cf33922
BFP540FESDH6327XTSA1
Hersteller: Infineon Technologies
Description: RF TRANS NPN 5V 30GHZ 4-TSFP
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, Flat Leads
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 20dB
Power - Max: 250mW
Current - Collector (Ic) (Max): 80mA
Voltage - Collector Emitter Breakdown (Max): 5V
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 20mA, 3.5V
Frequency - Transition: 30GHz
Noise Figure (dB Typ @ f): 0.9dB ~ 1.4dB @ 1.8GHz
Supplier Device Package: 4-TSFP
Part Status: Active
Produkt ist nicht verfügbar
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BFP540FESDH6327XTSA1 Infineon-BFP540FESD-DS-v02_00-EN.pdf?fileId=5546d462689a790c01690f038cf33922
BFP540FESDH6327XTSA1
Hersteller: Infineon Technologies
Description: RF TRANS NPN 5V 30GHZ 4-TSFP
Packaging: Cut Tape (CT)
Package / Case: 4-SMD, Flat Leads
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 20dB
Power - Max: 250mW
Current - Collector (Ic) (Max): 80mA
Voltage - Collector Emitter Breakdown (Max): 5V
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 20mA, 3.5V
Frequency - Transition: 30GHz
Noise Figure (dB Typ @ f): 0.9dB ~ 1.4dB @ 1.8GHz
Supplier Device Package: 4-TSFP
Part Status: Active
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Lieferzeit 10-14 Tag (e)
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TLE4983CHTNE6815HAMA1 fundamentals-of-power-semiconductors
Hersteller: Infineon Technologies
Description: MAG SWITCH SPEED SENSOR 3SSO
Packaging: Bulk
Grade: Automotive
Qualification: AEC-Q100
auf Bestellung 13500 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
106+4.8 EUR
Mindestbestellmenge: 106 Stücke
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IGW30N60TP INFN-S-A0002837998-1.pdf?t.download=true&u=5oefqw
IGW30N60TP
Hersteller: Infineon Technologies
Description: IGW30N60 - DISCRETE IGBT WITHOUT
Power - Max: 200 W
Current - Collector Pulsed (Icm): 90 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 53 A
Part Status: Active
Gate Charge: 130 nC
Test Condition: 400V, 30A, 10.5Ohm, 15V
Switching Energy: 710µJ (on), 420µJ (off)
Td (on/off) @ 25°C: 15ns/179ns
IGBT Type: Trench Field Stop
Supplier Device Package: PG-TO247-3
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 30A
Input Type: Standard
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Bulk
Produkt ist nicht verfügbar
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IGW30N60T INFN-S-A0001299666-1.pdf?t.download=true&u=5oefqw
IGW30N60T
Hersteller: Infineon Technologies
Description: IGW30N60 - DISCRETE IGBT WITHOUT
Produkt ist nicht verfügbar
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TLF42772ELXUMA2 Infineon-TLF4277-2EL-DS-v01_00-EN.pdf?fileId=5546d46259d9a4bf0159f9e999fd3f16
TLF42772ELXUMA2
Hersteller: Infineon Technologies
Description: IC REG LIN POS ADJ PG-SSOP-14-EP
Packaging: Tape & Reel (TR)
Package / Case: 14-LSSOP (0.154", 3.90mm Width) Exposed Pad
Output Type: Adjustable
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 200 µA
Voltage - Input (Max): 40V
Number of Regulators: 1
Supplier Device Package: PG-SSOP-14-EP
Voltage - Output (Max): 12V
Voltage - Output (Min/Fixed): 5V
Control Features: Enable
Part Status: Active
PSRR: 65dB (100Hz)
Voltage Dropout (Max): 0.5V @ 200mA
Protection Features: Over Current, Over Temperature, Over Voltage, Reverse Polarity, Short Circuit
Current - Supply (Max): 11 mA
Grade: Automotive
Qualification: AEC-Q100
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
2500+1.49 EUR
Mindestbestellmenge: 2500 Stücke
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TLF42772ELXUMA2 Infineon-TLF4277-2EL-DS-v01_00-EN.pdf?fileId=5546d46259d9a4bf0159f9e999fd3f16
TLF42772ELXUMA2
Hersteller: Infineon Technologies
Description: IC REG LIN POS ADJ PG-SSOP-14-EP
Packaging: Cut Tape (CT)
Package / Case: 14-LSSOP (0.154", 3.90mm Width) Exposed Pad
Output Type: Adjustable
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 200 µA
Voltage - Input (Max): 40V
Number of Regulators: 1
Supplier Device Package: PG-SSOP-14-EP
Voltage - Output (Max): 12V
Voltage - Output (Min/Fixed): 5V
Control Features: Enable
Part Status: Active
PSRR: 65dB (100Hz)
Voltage Dropout (Max): 0.5V @ 200mA
Protection Features: Over Current, Over Temperature, Over Voltage, Reverse Polarity, Short Circuit
Current - Supply (Max): 11 mA
Grade: Automotive
Qualification: AEC-Q100
auf Bestellung 6676 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
6+2.94 EUR
10+2.16 EUR
25+1.97 EUR
100+1.76 EUR
250+1.66 EUR
500+1.6 EUR
1000+1.55 EUR
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TLF4277ELXUMA1 Infineon-TLF4277EL-DS-v01_02-EN.pdf?fileId=5546d46259d9a4bf0159f9fab6363f26
TLF4277ELXUMA1
Hersteller: Infineon Technologies
Description: IC PWR SPLY MONITR/OVRVLT 14SSOP
DigiKey Programmable: Not Verified
Supplier Device Package: PG-SSOP-14-EP
Applications: Power Supply Monitor, Overvoltage Protection
Operating Temperature: -40°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: 14-LSSOP (0.154", 3.90mm Width) Exposed Pad
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
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IPD30N06S3L-20 INFNS11196-1.pdf?t.download=true&u=5oefqw
IPD30N06S3L-20
Hersteller: Infineon Technologies
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ 17A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 20µA
Supplier Device Package: PG-TO252-3-11
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2600 pF @ 25 V
Produkt ist nicht verfügbar
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IAUZ30N06S5L140ATMA1 Infineon-IAUZ30N06S5L140-DataSheet-v01_00-EN.pdf?fileId=5546d46271bf4f920171f471819e61b6
IAUZ30N06S5L140ATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 60V 30A TSDSON-8-32
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tj)
Rds On (Max) @ Id, Vgs: 14mOhm @ 15A, 10V
Power Dissipation (Max): 33W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 10µA
Supplier Device Package: PG-TSDSON-8-32
Grade: Automotive
Part Status: Active
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 12.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 888 pF @ 30 V
Qualification: AEC-Q101
auf Bestellung 30000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
5000+0.43 EUR
10000+0.4 EUR
15000+0.39 EUR
25000+0.37 EUR
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IAUZ30N06S5L140ATMA1 Infineon-IAUZ30N06S5L140-DataSheet-v01_00-EN.pdf?fileId=5546d46271bf4f920171f471819e61b6
IAUZ30N06S5L140ATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 60V 30A TSDSON-8-32
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tj)
Rds On (Max) @ Id, Vgs: 14mOhm @ 15A, 10V
Power Dissipation (Max): 33W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 10µA
Supplier Device Package: PG-TSDSON-8-32
Grade: Automotive
Part Status: Active
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 12.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 888 pF @ 30 V
Qualification: AEC-Q101
auf Bestellung 30695 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
10+1.83 EUR
16+1.14 EUR
100+0.75 EUR
500+0.58 EUR
1000+0.53 EUR
2000+0.48 EUR
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IRG4PC20UPBF IRG4PC20UPbF.pdf
IRG4PC20UPBF
Hersteller: Infineon Technologies
Description: IGBT 600V 13A 60W TO247AC
Power - Max: 60 W
Current - Collector Pulsed (Icm): 52 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 13 A
Gate Charge: 27 nC
Test Condition: 480V, 6.5A, 50Ohm, 15V
Switching Energy: 100µJ (on), 120µJ (off)
Td (on/off) @ 25°C: 21ns/86ns
Supplier Device Package: TO-247AC
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 6.5A
Input Type: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Bag
Produkt ist nicht verfügbar
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1EDI2002ASXUMA2 1EDI2002AS-ISO-DS-v03_20.pdf
1EDI2002ASXUMA2
Hersteller: Infineon Technologies
Description: DGT ISO 3.75KV 1CH GT DVR DSO36
Mounting Type: Surface Mount
Package / Case: 36-BSSOP (0.295", 7.50mm Width)
Packaging: Tape & Reel (TR)
Voltage - Output Supply: 13V ~ 18V
Number of Channels: 1
Part Status: Active
Rise / Fall Time (Typ): 30ns, 60ns
Supplier Device Package: PG-DSO-36-63
Voltage - Isolation: 3750Vrms
Current - Output High, Low: 1A, 1A
Technology: Magnetic Coupling
Operating Temperature: -40°C ~ 150°C (TJ)
Qualification: AEC-Q100
Grade: Automotive
auf Bestellung 2000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
1000+9.35 EUR
Mindestbestellmenge: 1000 Stücke
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SAK-C167CR-LM-ES-HA SIEMS00488-1.pdf?t.download=true&u=5oefqw
SAK-C167CR-LM-ES-HA
Hersteller: Infineon Technologies
Description: LEGACY 16-BIT MCU
Packaging: Bulk
Program Memory Type: ROMless
Oscillator Type: External
Operating Temperature: -40°C ~ 125°C (TA)
RAM Size: 4K x 8
Speed: 25MHz
Mounting Type: Surface Mount
Package / Case: 144-BQFP
Number of I/O: 111
Part Status: Active
Supplier Device Package: P-MQFP-144-8
Peripherals: POR, PWM, WDT
Connectivity: CANbus, EBI/EMI, SPI, UART/USART
Voltage - Supply (Vcc/Vdd): 4.5V ~ 5.5V
Core Size: 16-Bit
Data Converters: A/D 16x10b SAR
Core Processor: C166
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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SAK-C167CRLMHAKXQLA1
Hersteller: Infineon Technologies
Description: LEGACY 16-BIT MCU
Part Status: Active
Packaging: Bulk
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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