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IR3570BMTRPBF IR3570BMTRPBF Infineon Technologies pb-ir3564b.pdf?fileId=5546d462533600a4015356800b3728e2 Description: IC REG CTRLR INTEL 2OUT 40QFN
Supplier Device Package: 40-QFN (5x5)
Applications: Controller, Intel VR12, VR12.5, AMD SVI1, SVI2
Operating Temperature: -40°C ~ 85°C
Voltage - Input: 3.3V
Number of Outputs: 2
Mounting Type: Surface Mount
Package / Case: 40-VFQFN Exposed Pad
Packaging: Cut Tape (CT)
auf Bestellung 7932 Stücke:
Lieferzeit 10-14 Tag (e)
2+12.09 EUR
10+9.27 EUR
25+8.57 EUR
100+7.79 EUR
250+7.43 EUR
500+7.2 EUR
1000+7.02 EUR
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IR3570AMCP01TRP IR3570AMCP01TRP Infineon Technologies IR3564A_70A_PB_v3.04_10-1-13.pdf Description: IC REG CTRLR INTEL 2OUT 40VQFN
Produkt ist nicht verfügbar
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IR3570AMGB03TRP IR3570AMGB03TRP Infineon Technologies IR3564A_70A_PB_v3.04_10-1-13.pdf Description: IC REG CTRLR INTEL 2OUT 40VQFN
Supplier Device Package: PG-VQFN-40-901
Applications: Controller, Intel VR12, VR12.5, AMD SVI1, SVI2
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Input: 3.3V
Number of Outputs: 2
Mounting Type: Surface Mount
Package / Case: 40-VFQFN Exposed Pad
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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IR3570AMGB05TRP IR3570AMGB05TRP Infineon Technologies IR3564A_70A_PB_v3.04_10-1-13.pdf Description: IC REG CTRLR INTEL 2OUT 40VQFN
Supplier Device Package: PG-VQFN-40-901
Applications: Controller, Intel VR12, VR12.5, AMD SVI1, SVI2
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Input: 3.3V
Number of Outputs: 2
Mounting Type: Surface Mount
Package / Case: 40-VFQFN Exposed Pad
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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IR3570AMGB07TRP Infineon Technologies IR3564A_70A_PB_v3.04_10-1-13.pdf Description: IC REG CTRLR INTEL 2OUT 40VQFN
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IR3570AMGB08TRP Infineon Technologies IR3564A_70A_PB_v3.04_10-1-13.pdf Description: IC REG CTRLR INTEL 2OUT 40VQFN
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IR3570AMGB09TRP Infineon Technologies IR3564A_70A_PB_v3.04_10-1-13.pdf Description: IC REG CTRLR INTEL 2OUT 40VQFN
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IR3570AMGB11TRP IR3570AMGB11TRP Infineon Technologies IR3564A_70A_PB_v3.04_10-1-13.pdf Description: IC REG CTRLR INTEL 2OUT 40VQFN
Supplier Device Package: PG-VQFN-40-901
Applications: Controller, Intel VR12, VR12.5, AMD SVI1, SVI2
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Input: 3.3V
Number of Outputs: 2
Mounting Type: Surface Mount
Part Status: Obsolete
Package / Case: 40-VFQFN Exposed Pad
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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IR3570AMGB12TRP Infineon Technologies IR3564A_70A_PB_v3.04_10-1-13.pdf Description: IC REG CTRLR INTEL 2OUT 40VQFN
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IR3570AMGB13TRP Infineon Technologies IR3564A_70A_PB_v3.04_10-1-13.pdf Description: IC REG CTRLR INTEL 2OUT 40VQFN
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IR3570AMGB14TRP Infineon Technologies IR3564A_70A_PB_v3.04_10-1-13.pdf Description: IC REG CTRLR INTEL 2OUT 40VQFN
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IR3570AMGB15TRP Infineon Technologies IR3564A_70A_PB_v3.04_10-1-13.pdf Description: IC REG CTRLR INTEL 2OUT 40VQFN
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IR3570AMGB16TRP Infineon Technologies IR3564A_70A_PB_v3.04_10-1-13.pdf Description: IC REG CTRLR INTEL 2OUT 40VQFN
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IR3570AMGB20TRP Infineon Technologies IR3564A_70A_PB_v3.04_10-1-13.pdf Description: IC REG CTRLR INTEL 2OUT 40VQFN
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IR3570AMIE03TRP Infineon Technologies IR3564A_70A_PB_v3.04_10-1-13.pdf Description: IC REG CTRLR INTEL 2OUT 40VQFN
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IR3570AMIE04TRP IR3570AMIE04TRP Infineon Technologies IR3564A_70A_PB_v3.04_10-1-13.pdf Description: IC REG CTRLR INTEL 2OUT 40VQFN
Supplier Device Package: PG-VQFN-40-901
Applications: Controller, Intel VR12, VR12.5, AMD SVI1, SVI2
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Input: 3.3V
Number of Outputs: 2
Mounting Type: Surface Mount
Package / Case: 40-VFQFN Exposed Pad
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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IR3570AMIE07TRP Infineon Technologies IR3564A_70A_PB_v3.04_10-1-13.pdf Description: IC REG CTRLR INTEL 2OUT 40VQFN
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IR3570AMIS03TRP Infineon Technologies IR3564A_70A_PB_v3.04_10-1-13.pdf Description: IC REG CTRLR INTEL 2OUT 40VQFN
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IR3570AMQA01TRP IR3570AMQA01TRP Infineon Technologies IR3564A_70A_PB_v3.04_10-1-13.pdf Description: IC REG CTRLR INTEL 2OUT 40VQFN
Part Status: Obsolete
Supplier Device Package: PG-VQFN-40-901
Applications: Controller, Intel VR12, VR12.5, AMD SVI1, SVI2
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Input: 3.3V
Number of Outputs: 2
Mounting Type: Surface Mount
Package / Case: 40-VFQFN Exposed Pad
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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IR3570AMQA02TRP IR3570AMQA02TRP Infineon Technologies IR3564A_70A_PB_v3.04_10-1-13.pdf Description: IC REG CTRLR INTEL 2OUT 40VQFN
Applications: Controller, Intel VR12, VR12.5, AMD SVI1, SVI2
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Input: 3.3V
Number of Outputs: 2
Mounting Type: Surface Mount
Package / Case: 40-VFQFN Exposed Pad
Packaging: Tape & Reel (TR)
Supplier Device Package: PG-VQFN-40-901
Produkt ist nicht verfügbar
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IR3570AMQA04TRP IR3570AMQA04TRP Infineon Technologies IR3564A_70A_PB_v3.04_10-1-13.pdf Description: IC REG CTRLR INTEL 2OUT 40VQFN
Mounting Type: Surface Mount
Package / Case: 40-VFQFN Exposed Pad
Packaging: Tape & Reel (TR)
Supplier Device Package: PG-VQFN-40-901
Applications: Controller, Intel VR12, VR12.5, AMD SVI1, SVI2
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Input: 3.3V
Number of Outputs: 2
Produkt ist nicht verfügbar
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IRF8113TRPBF-1 IRF8113TRPBF-1 Infineon Technologies IRF8113PbF-1_6-23-14.pdf Description: MOSFET N-CH 30V 17.2A 8SO
Input Capacitance (Ciss) (Max) @ Vds: 2910 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Power Dissipation (Max): 2.5W (Ta)
Rds On (Max) @ Id, Vgs: 5.6mOhm @ 17.2A, 10V
Current - Continuous Drain (Id) @ 25°C: 17.2A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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BTS133E3045ANTMA1 BTS133E3045ANTMA1 Infineon Technologies INFNS27929-1.pdf?t.download=true&u=5oefqw Description: AUTOMOTIVE SMART LOW-SIDE SWITCH
Part Status: Active
Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage, Short Circuit
Supplier Device Package: PG-TO220-3-5
Ratio - Input:Output: 1:1
Current - Output (Max): 7A
Voltage - Supply (Vcc/Vdd): Not Required
Voltage - Load: 60V
Input Type: Non-Inverting
Rds On (Typ): 40mOhm
Output Configuration: Low Side
Operating Temperature: -40°C ~ 150°C (TJ)
Switch Type: General Purpose
Number of Outputs: 1
Mounting Type: Surface Mount
Output Type: N-Channel
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Features: Slew Rate Controlled
Packaging: Bulk
Produkt ist nicht verfügbar
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IKQ75N120CT2 IKQ75N120CT2 Infineon Technologies Infineon-IKQ75N120CT2-DS-v02_03-EN.pdf?fileId=5546d4625bd71aa0015bd81797280532 Description: IKQ75N120 - DISCRETE IGBT WITH A
Packaging: Bulk
Produkt ist nicht verfügbar
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ICE3BS03LJG ICE3BS03LJG Infineon Technologies INFNS11742-1.pdf?t.download=true&u=5oefqw Description: ICE3BS03 - PWM-FF (FIXED FREQUEN
Produkt ist nicht verfügbar
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IKW15N120H3 IKW15N120H3 Infineon Technologies Infineon-IKW15N120H3-DS-v02_01-EN.pdf?fileId=db3a304325305e6d01258df9167d3741 Description: IKW15N120 - DISCRETE IGBT WITH A
Produkt ist nicht verfügbar
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BAR63-06E6327HTSA1 BAR63-06E6327HTSA1 Infineon Technologies Infineon-BAR63SERIES_DS-DS-v01_01-EN.pdf?fileId=5546d4625e763904015ec363284f64d0 Description: BAR63 - PIN DIODE
Power Dissipation (Max): 250 mW
Current - Max: 100 mA
Part Status: Active
Supplier Device Package: PG-SOT23-3-3
Voltage - Peak Reverse (Max): 50V
Resistance @ If, F: 1Ohm @ 10mA, 100MHz
Capacitance @ Vr, F: 0.3pF @ 5V, 1MHz
Operating Temperature: 150°C (TJ)
Diode Type: PIN - 1 Pair Common Anode
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Bulk
Produkt ist nicht verfügbar
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BAR63-03WE6327 BAR63-03WE6327 Infineon Technologies INFNS15694-1.pdf?t.download=true&u=5oefqw Description: BAR63 - PIN DIODE
Power Dissipation (Max): 250 mW
Current - Max: 100 mA
Part Status: Active
Supplier Device Package: PG-SOD323-2
Voltage - Peak Reverse (Max): 50V
Capacitance @ Vr, F: 0.3pF @ 5V, 1MHz
Operating Temperature: 150°C (TJ)
Diode Type: PIN - Single
Package / Case: SC-76, SOD-323
Packaging: Bulk
Produkt ist nicht verfügbar
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BAR63-04E6327 BAR63-04E6327 Infineon Technologies INFNS15694-1.pdf?t.download=true&u=5oefqw Description: BAR63 - PIN DIODE
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Diode Type: PIN - 1 Pair Series Connection
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 0.3pF @ 5V, 1MHz
Voltage - Peak Reverse (Max): 50V
Supplier Device Package: PG-SOT23
Part Status: Active
Current - Max: 100 mA
Power Dissipation (Max): 250 mW
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BAR63-05E6327 BAR63-05E6327 Infineon Technologies INFNS15694-1.pdf?t.download=true&u=5oefqw Description: BAR63 - PIN DIODE
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Diode Type: PIN - 1 Pair Common Cathode
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 0.3pF @ 5V, 1MHz
Voltage - Peak Reverse (Max): 50V
Supplier Device Package: PG-SOT23
Part Status: Active
Current - Max: 100 mA
Power Dissipation (Max): 250 mW
auf Bestellung 63000 Stücke:
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2874+0.21 EUR
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IPP65R280C6 IPP65R280C6 Infineon Technologies INFNS16437-1.pdf?t.download=true&u=5oefqw Description: POWER FIELD-EFFECT TRANSISTOR, 6
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13.8A (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 4.4A, 10V
Power Dissipation (Max): 104W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 440µA
Supplier Device Package: PG-TO220-3-1
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 950 pF @ 100 V
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IPI65R280C6 IPI65R280C6 Infineon Technologies INFN-S-A0004583427-1.pdf?t.download=true&u=5oefqw Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13.8A (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 4.4A, 10V
Power Dissipation (Max): 104W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 440µA
Supplier Device Package: PG-TO262-3-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 950 pF @ 100 V
auf Bestellung 500 Stücke:
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260+2.24 EUR
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IPI65R280C6XKSA1 IPI65R280C6XKSA1 Infineon Technologies IPI65R280C6_2_0.pdf?folderId=db3a3043163797a6011637d4bae7003b&fileId=db3a30432a7fedfc012a8ac1e7c758cf Description: MOSFET N-CH 650V 13.8A TO262-3
Packaging: Bulk
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13.8A (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 4.4A, 10V
Power Dissipation (Max): 104W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 440µA
Supplier Device Package: PG-TO262-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 950 pF @ 100 V
auf Bestellung 500 Stücke:
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176+3.06 EUR
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IPB65R280E6 IPB65R280E6 Infineon Technologies INFNS16656-1.pdf?t.download=true&u=5oefqw Description: OPTLMOS N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13.8A (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 4.4A, 10V
Power Dissipation (Max): 104W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 440µA
Supplier Device Package: PG-TO263-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 950 pF @ 100 V
Produkt ist nicht verfügbar
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IPW65R280C6 IPW65R280C6 Infineon Technologies INFN-S-A0004583427-1.pdf?t.download=true&u=5oefqw Description: 650 V COOLMOS E6 POWER MOSFET
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13.8A (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 4.4A, 10V
Power Dissipation (Max): 104W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 440µA
Supplier Device Package: PG-TO247-3-41
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 950 pF @ 100 V
auf Bestellung 466 Stücke:
Lieferzeit 10-14 Tag (e)
194+2.99 EUR
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IPW65R280E6FKSA1 IPW65R280E6FKSA1 Infineon Technologies IPW65R280E6_2_1.pdf?folderId=db3a3043163797a6011637d4bae7003b&fileId=db3a30432a7fedfc012a9e4d5aa80758 Description: MOSFET N-CH 650V 13.8A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13.8A (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 4.4A, 10V
Power Dissipation (Max): 104W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 440µA
Supplier Device Package: PG-TO247-3-1
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 950 pF @ 100 V
auf Bestellung 200 Stücke:
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170+3.19 EUR
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IPW65R280E6 IPW65R280E6 Infineon Technologies INFN-S-A0004457106-1.pdf?t.download=true&u=5oefqw Description: 650 V COOLMOS E6 POWER MOSFET
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13.8A (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 4.4A, 10V
Power Dissipation (Max): 104W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 440µA
Supplier Device Package: PG-TO247-3-41
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 950 pF @ 100 V
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IPP048N04NG IPP048N04NG Infineon Technologies INFNS15602-1.pdf?t.download=true&u=5oefqw Description: IPP048N04 - 12V-300V N-CHANNEL P
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IFX1117MEVHTMA1 IFX1117MEVHTMA1 Infineon Technologies IFX1117_Rev1.0_2-24-11.pdf Description: IC REG LIN POS ADJ 1A SOT223-4
Voltage - Output (Max): 13.6V
Supplier Device Package: PG-SOT223-4-21
Number of Regulators: 1
Voltage - Input (Max): 15V
Current - Quiescent (Iq): 5 mA
Output Configuration: Positive
Operating Temperature: 0°C ~ 125°C
Current - Output: 1A
Mounting Type: Surface Mount
Output Type: Adjustable
Package / Case: TO-261-4, TO-261AA
Packaging: Bulk
Protection Features: Over Current, Over Temperature, Short Circuit
Voltage Dropout (Max): 1.4V @ 1A
PSRR: 70dB (120Hz)
Voltage - Output (Min/Fixed): 1.25V
auf Bestellung 7981 Stücke:
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961+0.62 EUR
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BCR129E6327 BCR129E6327 Infineon Technologies INFNS17180-1.pdf?t.download=true&u=5oefqw Description: BCR129 - DIGITAL TRANSISTOR
Resistor - Base (R1): 10 kOhms
Frequency - Transition: 150 MHz
Power - Max: 200 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Active
Supplier Device Package: PG-SOT23-3-11
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 5mA, 5V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Transistor Type: NPN - Pre-Biased
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Bulk
Produkt ist nicht verfügbar
 Mindestbestellmenge: 6000 Stücke
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IPW65R095C7 IPW65R095C7 Infineon Technologies Description: MOSFET N-CH 650V 24A TO247
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 95mOhm @ 11.8A, 10V
Power Dissipation (Max): 128W (Tc)
Vgs(th) (Max) @ Id: 4V @ 590µA
Supplier Device Package: PG-TO247
Part Status: Active
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2140 pF @ 400 V
Produkt ist nicht verfügbar
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IPD90N04S3-04 IPD90N04S3-04 Infineon Technologies INFNS10879-1.pdf?t.download=true&u=5oefqw Description: OPTLMOS N-CHANNEL POWER MOSFET
Vgs(th) (Max) @ Id: 4V @ 90µA
Power Dissipation (Max): 136W (Tc)
Rds On (Max) @ Id, Vgs: 3.6mOhm @ 80A, 10V
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Bulk
Input Capacitance (Ciss) (Max) @ Vds: 5200 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PG-TO252-3-11
Produkt ist nicht verfügbar
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IPB0401NM5SATMA1 Infineon Technologies Description: TRENCH >=100V
Packaging: Tape & Reel (TR)
Part Status: Active
Produkt ist nicht verfügbar
 Mindestbestellmenge: 1000 Stücke
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TLE6251DSXT TLE6251DSXT Infineon Technologies Infineon-TLE6251DS-DS-v03_10-EN.pdf?fileId=5546d46259d9a4bf015a3d2d98f4606e Description: IC TRANSCEIVER FULL 1/1 DSO-8
Part Status: Active
Duplex: Full
Receiver Hysteresis: 200 mV
Supplier Device Package: PG-DSO-8-16
Protocol: CANbus
Data Rate: 1MBd
Number of Drivers/Receivers: 1/1
Voltage - Supply: 4.75V ~ 5.25V
Operating Temperature: -40°C ~ 150°C (TJ)
Type: Transceiver
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Bulk
Produkt ist nicht verfügbar
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TLE6251DXUMA2 TLE6251DXUMA2 Infineon Technologies Infineon-TLE6251D-DS-v01_10-EN.pdf?fileId=5546d46259d9a4bf015a3d2d680b605d Description: IC TRANSCEIVER FULL 1/1 PGDSO816
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Type: Transceiver
Operating Temperature: -40°C ~ 150°C
Voltage - Supply: 4.75V ~ 5.25V
Number of Drivers/Receivers: 1/1
Data Rate: 1MBd
Protocol: CANbus
Supplier Device Package: PG-DSO-8-16
Receiver Hysteresis: 200 mV
Duplex: Full
Part Status: Active
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TLE6251DXUMA2 TLE6251DXUMA2 Infineon Technologies Infineon-TLE6251D-DS-v01_10-EN.pdf?fileId=5546d46259d9a4bf015a3d2d680b605d Description: IC TRANSCEIVER FULL 1/1 PGDSO816
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Type: Transceiver
Operating Temperature: -40°C ~ 150°C
Voltage - Supply: 4.75V ~ 5.25V
Number of Drivers/Receivers: 1/1
Data Rate: 1MBd
Protocol: CANbus
Supplier Device Package: PG-DSO-8-16
Receiver Hysteresis: 200 mV
Duplex: Full
Part Status: Active
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100+1.71 EUR
250+1.62 EUR
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1000+1.55 EUR
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TLE6251DS TLE6251DS Infineon Technologies Infineon-TLE6251-2G-DS-v01_22-EN.pdf?fileId=5546d4625996c0c30159a766fb9977b8 Description: IC TRANSCEIVER FULL 1/1 DSO-8
Packaging: Bulk
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Type: Transceiver
Operating Temperature: -40°C ~ 150°C
Voltage - Supply: 4.75V ~ 5.25V
Number of Drivers/Receivers: 1/1
Data Rate: 1MBd
Protocol: CANbus
Supplier Device Package: PG-DSO-8-16
Receiver Hysteresis: 200 mV
Duplex: Full
Part Status: Active
Produkt ist nicht verfügbar
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REFILD8150DC15ATOBO1 REFILD8150DC15ATOBO1 Infineon Technologies Infineon-Reference_design_REF_ILD8150_DC_1.5A_high_frequency_operation-ApplicationNotes-v01_00-EN.pdf?fileId=5546d4626d66c2b1016d73f768f820ae Description: EVAL BOARD FOR ILD8150
Features: Dimmable
Packaging: Box
Voltage - Input: 8V ~ 80V
Contents: Board(s)
Current - Output / Channel: 1.5A
Utilized IC / Part: ILD8150
Supplied Contents: Board(s)
Outputs and Type: 1 Non-Isolated Output
Part Status: Active
auf Bestellung 4 Stücke:
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1+154.57 EUR
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BSC430N25NSFDATMA1 BSC430N25NSFDATMA1 Infineon Technologies Infineon-BSC430N25NSFD-DS-v02_01-EN.pdf?fileId=5546d462689a790c0168c7d453686447 Description: MOSFET N-CH 250V TSON-8
Vgs (Max): ±20V
Part Status: Active
Supplier Device Package: PG-TSON-8-3
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
Drain to Source Voltage (Vdss): 250 V
Produkt ist nicht verfügbar
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BSC430N25NSFDATMA1 BSC430N25NSFDATMA1 Infineon Technologies Infineon-BSC430N25NSFD-DS-v02_01-EN.pdf?fileId=5546d462689a790c0168c7d453686447 Description: MOSFET N-CH 250V TSON-8
Drain to Source Voltage (Vdss): 250 V
Vgs (Max): ±20V
Part Status: Active
Supplier Device Package: PG-TSON-8-3
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
auf Bestellung 82 Stücke:
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3+9.59 EUR
10+6.39 EUR
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SFH756 Infineon Technologies SFH756_756V.pdf Description: XMITTER FIBER OPTIC 660NM
Current - DC Forward (If) (Max): 50 mA
Voltage - DC Reverse (Vr) (Max): 3 V
Capacitance: 30 pF
Spectral Bandwidth: 25nm
Voltage - Forward (Vf) (Typ): 2.1V
Wavelength: 660nm
Packaging: Bulk
auf Bestellung 3691 Stücke:
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84+6.46 EUR
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CY7C1460SV25-250BZC CY7C1460SV25-250BZC Infineon Technologies Description: IC SRAM 36MBIT PARALLEL 165FBGA
auf Bestellung 675 Stücke:
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6+101.34 EUR
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TLE4906L TLE4906L Infineon Technologies Infineon-TLE4906-DS-v02_00-en.pdf?fileId=db3a304316f66ee8011754425fe50642 Description: TLE4906 - HALL SWITCH
Part Status: Active
Test Condition: 25°C
Supplier Device Package: PG-SSO-3-2
Current - Supply (Max): 6mA
Current - Output (Max): 20mA
Sensing Range: 13.5mT Trip, 5mT Release
Technology: Hall Effect
Voltage - Supply: 2.7V ~ 18V
Operating Temperature: -40°C ~ 150°C (TJ)
Function: Unipolar Switch
Mounting Type: Through Hole
Polarization: South Pole
Output Type: Open Collector
Package / Case: 3-SSIP, SSO-3-02
Features: Temperature Compensated
Packaging: Bulk
Produkt ist nicht verfügbar
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IAUZ40N06S5N050ATMA1 IAUZ40N06S5N050ATMA1 Infineon Technologies Infineon-IAUZ40N06S5N050-DataSheet-v01_00-EN.pdf?fileId=5546d46271bf4f920171f47191a561b9 Description: MOSFET N-CH 60V 40A TSDSON-8-33
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tj)
Rds On (Max) @ Id, Vgs: 5mOhm @ 20A, 10V
Power Dissipation (Max): 71W (Tc)
Vgs(th) (Max) @ Id: 3.4V @ 29µA
Supplier Device Package: PG-TSDSON-8-33
Part Status: Active
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 30.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 30 V
Grade: Automotive
Qualification: AEC-Q101
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5000+0.89 EUR
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IAUZ40N06S5N050ATMA1 IAUZ40N06S5N050ATMA1 Infineon Technologies Infineon-IAUZ40N06S5N050-DataSheet-v01_00-EN.pdf?fileId=5546d46271bf4f920171f47191a561b9 Description: MOSFET N-CH 60V 40A TSDSON-8-33
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tj)
Rds On (Max) @ Id, Vgs: 5mOhm @ 20A, 10V
Power Dissipation (Max): 71W (Tc)
Vgs(th) (Max) @ Id: 3.4V @ 29µA
Supplier Device Package: PG-TSDSON-8-33
Grade: Automotive
Part Status: Active
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 30.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 30 V
Qualification: AEC-Q101
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500+1.17 EUR
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2000+1 EUR
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IPP040N06N3G IPP040N06N3G Infineon Technologies INFNS17005-1.pdf?t.download=true&u=5oefqw Description: POWER FIELD-EFFECT TRANSISTOR, 9
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 130A (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 90A, 10V
Power Dissipation (Max): 188W (Tc)
Vgs(th) (Max) @ Id: 4V @ 90µA
Supplier Device Package: PG-TO220-3-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 98 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11000 pF @ 30 V
Produkt ist nicht verfügbar
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IGW15T120 IGW15T120 Infineon Technologies INFNS14050-1.pdf?t.download=true&u=5oefqw Description: IGW15T120 - DISCRETE IGBT WITHOU
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 15A
Supplier Device Package: PG-TO247-3-21
Td (on/off) @ 25°C: 50ns/520ns
Switching Energy: 1.3mJ (on), 1.4mJ (off)
Test Condition: 600V, 15A, 56Ohm, 15V
Gate Charge: 85 nC
Current - Collector (Ic) (Max): 30 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 45 A
Power - Max: 110 W
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136+4.24 EUR
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BTS442E2 BTS442E2 Infineon Technologies INFNS16405-1.pdf?t.download=true&u=5oefqw description Description: BTS442 - PROFET - SMART HIGH SID
Features: Auto Restart, Status Flag
Packaging: Bulk
Package / Case: TO-220-5 Formed Leads
Output Type: N-Channel
Mounting Type: Through Hole
Number of Outputs: 1
Interface: Logic
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 15mOhm
Input Type: Non-Inverting
Voltage - Load: 4.5V ~ 42V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 21A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-TO220-5-11
Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, Over Voltage
Part Status: Active
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IKW75N60TXK IKW75N60TXK Infineon Technologies INFNS30104-1.pdf?t.download=true&u=5oefqw Description: IKW75N60 - DISCRETE IGBT WITH AN
Packaging: Bulk
Part Status: Active
Produkt ist nicht verfügbar
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IKW75N60H3 Infineon Technologies INFNS17451-1.pdf?t.download=true&u=5oefqw Description: IKW75N60 - DISCRETE IGBT WITH AN
Power - Max: 428 W
Current - Collector Pulsed (Icm): 225 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 80 A
Part Status: Active
Gate Charge: 470 nC
Test Condition: 400V, 75A, 5.2Ohm, 15V
Switching Energy: 3mJ (on), 1.7mJ (off)
Td (on/off) @ 25°C: 31ns/265ns
IGBT Type: Trench Field Stop
Supplier Device Package: PG-TO247-3-41
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 75A
Reverse Recovery Time (trr): 190 ns
Input Type: Standard
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Bulk
Produkt ist nicht verfügbar
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IR3570BMTRPBF pb-ir3564b.pdf?fileId=5546d462533600a4015356800b3728e2
IR3570BMTRPBF
Hersteller: Infineon Technologies
Description: IC REG CTRLR INTEL 2OUT 40QFN
Supplier Device Package: 40-QFN (5x5)
Applications: Controller, Intel VR12, VR12.5, AMD SVI1, SVI2
Operating Temperature: -40°C ~ 85°C
Voltage - Input: 3.3V
Number of Outputs: 2
Mounting Type: Surface Mount
Package / Case: 40-VFQFN Exposed Pad
Packaging: Cut Tape (CT)
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2+12.09 EUR
10+9.27 EUR
25+8.57 EUR
100+7.79 EUR
250+7.43 EUR
500+7.2 EUR
1000+7.02 EUR
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IR3570AMCP01TRP IR3564A_70A_PB_v3.04_10-1-13.pdf
IR3570AMCP01TRP
Hersteller: Infineon Technologies
Description: IC REG CTRLR INTEL 2OUT 40VQFN
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IR3570AMGB03TRP IR3564A_70A_PB_v3.04_10-1-13.pdf
IR3570AMGB03TRP
Hersteller: Infineon Technologies
Description: IC REG CTRLR INTEL 2OUT 40VQFN
Supplier Device Package: PG-VQFN-40-901
Applications: Controller, Intel VR12, VR12.5, AMD SVI1, SVI2
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Input: 3.3V
Number of Outputs: 2
Mounting Type: Surface Mount
Package / Case: 40-VFQFN Exposed Pad
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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IR3570AMGB05TRP IR3564A_70A_PB_v3.04_10-1-13.pdf
IR3570AMGB05TRP
Hersteller: Infineon Technologies
Description: IC REG CTRLR INTEL 2OUT 40VQFN
Supplier Device Package: PG-VQFN-40-901
Applications: Controller, Intel VR12, VR12.5, AMD SVI1, SVI2
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Input: 3.3V
Number of Outputs: 2
Mounting Type: Surface Mount
Package / Case: 40-VFQFN Exposed Pad
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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IR3570AMGB07TRP IR3564A_70A_PB_v3.04_10-1-13.pdf
Hersteller: Infineon Technologies
Description: IC REG CTRLR INTEL 2OUT 40VQFN
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IR3570AMGB08TRP IR3564A_70A_PB_v3.04_10-1-13.pdf
Hersteller: Infineon Technologies
Description: IC REG CTRLR INTEL 2OUT 40VQFN
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IR3570AMGB09TRP IR3564A_70A_PB_v3.04_10-1-13.pdf
Hersteller: Infineon Technologies
Description: IC REG CTRLR INTEL 2OUT 40VQFN
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IR3570AMGB11TRP IR3564A_70A_PB_v3.04_10-1-13.pdf
IR3570AMGB11TRP
Hersteller: Infineon Technologies
Description: IC REG CTRLR INTEL 2OUT 40VQFN
Supplier Device Package: PG-VQFN-40-901
Applications: Controller, Intel VR12, VR12.5, AMD SVI1, SVI2
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Input: 3.3V
Number of Outputs: 2
Mounting Type: Surface Mount
Part Status: Obsolete
Package / Case: 40-VFQFN Exposed Pad
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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IR3570AMGB12TRP IR3564A_70A_PB_v3.04_10-1-13.pdf
Hersteller: Infineon Technologies
Description: IC REG CTRLR INTEL 2OUT 40VQFN
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IR3570AMGB13TRP IR3564A_70A_PB_v3.04_10-1-13.pdf
Hersteller: Infineon Technologies
Description: IC REG CTRLR INTEL 2OUT 40VQFN
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IR3570AMGB14TRP IR3564A_70A_PB_v3.04_10-1-13.pdf
Hersteller: Infineon Technologies
Description: IC REG CTRLR INTEL 2OUT 40VQFN
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IR3570AMGB15TRP IR3564A_70A_PB_v3.04_10-1-13.pdf
Hersteller: Infineon Technologies
Description: IC REG CTRLR INTEL 2OUT 40VQFN
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IR3570AMGB16TRP IR3564A_70A_PB_v3.04_10-1-13.pdf
Hersteller: Infineon Technologies
Description: IC REG CTRLR INTEL 2OUT 40VQFN
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IR3570AMGB20TRP IR3564A_70A_PB_v3.04_10-1-13.pdf
Hersteller: Infineon Technologies
Description: IC REG CTRLR INTEL 2OUT 40VQFN
Produkt ist nicht verfügbar
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IR3570AMIE03TRP IR3564A_70A_PB_v3.04_10-1-13.pdf
Hersteller: Infineon Technologies
Description: IC REG CTRLR INTEL 2OUT 40VQFN
Produkt ist nicht verfügbar
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IR3570AMIE04TRP IR3564A_70A_PB_v3.04_10-1-13.pdf
IR3570AMIE04TRP
Hersteller: Infineon Technologies
Description: IC REG CTRLR INTEL 2OUT 40VQFN
Supplier Device Package: PG-VQFN-40-901
Applications: Controller, Intel VR12, VR12.5, AMD SVI1, SVI2
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Input: 3.3V
Number of Outputs: 2
Mounting Type: Surface Mount
Package / Case: 40-VFQFN Exposed Pad
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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IR3570AMIE07TRP IR3564A_70A_PB_v3.04_10-1-13.pdf
Hersteller: Infineon Technologies
Description: IC REG CTRLR INTEL 2OUT 40VQFN
Produkt ist nicht verfügbar
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IR3570AMIS03TRP IR3564A_70A_PB_v3.04_10-1-13.pdf
Hersteller: Infineon Technologies
Description: IC REG CTRLR INTEL 2OUT 40VQFN
Produkt ist nicht verfügbar
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IR3570AMQA01TRP IR3564A_70A_PB_v3.04_10-1-13.pdf
IR3570AMQA01TRP
Hersteller: Infineon Technologies
Description: IC REG CTRLR INTEL 2OUT 40VQFN
Part Status: Obsolete
Supplier Device Package: PG-VQFN-40-901
Applications: Controller, Intel VR12, VR12.5, AMD SVI1, SVI2
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Input: 3.3V
Number of Outputs: 2
Mounting Type: Surface Mount
Package / Case: 40-VFQFN Exposed Pad
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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IR3570AMQA02TRP IR3564A_70A_PB_v3.04_10-1-13.pdf
IR3570AMQA02TRP
Hersteller: Infineon Technologies
Description: IC REG CTRLR INTEL 2OUT 40VQFN
Applications: Controller, Intel VR12, VR12.5, AMD SVI1, SVI2
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Input: 3.3V
Number of Outputs: 2
Mounting Type: Surface Mount
Package / Case: 40-VFQFN Exposed Pad
Packaging: Tape & Reel (TR)
Supplier Device Package: PG-VQFN-40-901
Produkt ist nicht verfügbar
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IR3570AMQA04TRP IR3564A_70A_PB_v3.04_10-1-13.pdf
IR3570AMQA04TRP
Hersteller: Infineon Technologies
Description: IC REG CTRLR INTEL 2OUT 40VQFN
Mounting Type: Surface Mount
Package / Case: 40-VFQFN Exposed Pad
Packaging: Tape & Reel (TR)
Supplier Device Package: PG-VQFN-40-901
Applications: Controller, Intel VR12, VR12.5, AMD SVI1, SVI2
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Input: 3.3V
Number of Outputs: 2
Produkt ist nicht verfügbar
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IRF8113TRPBF-1 IRF8113PbF-1_6-23-14.pdf
IRF8113TRPBF-1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 30V 17.2A 8SO
Input Capacitance (Ciss) (Max) @ Vds: 2910 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Power Dissipation (Max): 2.5W (Ta)
Rds On (Max) @ Id, Vgs: 5.6mOhm @ 17.2A, 10V
Current - Continuous Drain (Id) @ 25°C: 17.2A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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BTS133E3045ANTMA1 INFNS27929-1.pdf?t.download=true&u=5oefqw
BTS133E3045ANTMA1
Hersteller: Infineon Technologies
Description: AUTOMOTIVE SMART LOW-SIDE SWITCH
Part Status: Active
Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage, Short Circuit
Supplier Device Package: PG-TO220-3-5
Ratio - Input:Output: 1:1
Current - Output (Max): 7A
Voltage - Supply (Vcc/Vdd): Not Required
Voltage - Load: 60V
Input Type: Non-Inverting
Rds On (Typ): 40mOhm
Output Configuration: Low Side
Operating Temperature: -40°C ~ 150°C (TJ)
Switch Type: General Purpose
Number of Outputs: 1
Mounting Type: Surface Mount
Output Type: N-Channel
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Features: Slew Rate Controlled
Packaging: Bulk
Produkt ist nicht verfügbar
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IKQ75N120CT2 Infineon-IKQ75N120CT2-DS-v02_03-EN.pdf?fileId=5546d4625bd71aa0015bd81797280532
IKQ75N120CT2
Hersteller: Infineon Technologies
Description: IKQ75N120 - DISCRETE IGBT WITH A
Packaging: Bulk
Produkt ist nicht verfügbar
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ICE3BS03LJG INFNS11742-1.pdf?t.download=true&u=5oefqw
ICE3BS03LJG
Hersteller: Infineon Technologies
Description: ICE3BS03 - PWM-FF (FIXED FREQUEN
Produkt ist nicht verfügbar
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IKW15N120H3 Infineon-IKW15N120H3-DS-v02_01-EN.pdf?fileId=db3a304325305e6d01258df9167d3741
IKW15N120H3
Hersteller: Infineon Technologies
Description: IKW15N120 - DISCRETE IGBT WITH A
Produkt ist nicht verfügbar
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BAR63-06E6327HTSA1 Infineon-BAR63SERIES_DS-DS-v01_01-EN.pdf?fileId=5546d4625e763904015ec363284f64d0
BAR63-06E6327HTSA1
Hersteller: Infineon Technologies
Description: BAR63 - PIN DIODE
Power Dissipation (Max): 250 mW
Current - Max: 100 mA
Part Status: Active
Supplier Device Package: PG-SOT23-3-3
Voltage - Peak Reverse (Max): 50V
Resistance @ If, F: 1Ohm @ 10mA, 100MHz
Capacitance @ Vr, F: 0.3pF @ 5V, 1MHz
Operating Temperature: 150°C (TJ)
Diode Type: PIN - 1 Pair Common Anode
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Bulk
Produkt ist nicht verfügbar
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BAR63-03WE6327 INFNS15694-1.pdf?t.download=true&u=5oefqw
BAR63-03WE6327
Hersteller: Infineon Technologies
Description: BAR63 - PIN DIODE
Power Dissipation (Max): 250 mW
Current - Max: 100 mA
Part Status: Active
Supplier Device Package: PG-SOD323-2
Voltage - Peak Reverse (Max): 50V
Capacitance @ Vr, F: 0.3pF @ 5V, 1MHz
Operating Temperature: 150°C (TJ)
Diode Type: PIN - Single
Package / Case: SC-76, SOD-323
Packaging: Bulk
Produkt ist nicht verfügbar
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BAR63-04E6327 INFNS15694-1.pdf?t.download=true&u=5oefqw
BAR63-04E6327
Hersteller: Infineon Technologies
Description: BAR63 - PIN DIODE
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Diode Type: PIN - 1 Pair Series Connection
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 0.3pF @ 5V, 1MHz
Voltage - Peak Reverse (Max): 50V
Supplier Device Package: PG-SOT23
Part Status: Active
Current - Max: 100 mA
Power Dissipation (Max): 250 mW
Produkt ist nicht verfügbar
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BAR63-05E6327 INFNS15694-1.pdf?t.download=true&u=5oefqw
BAR63-05E6327
Hersteller: Infineon Technologies
Description: BAR63 - PIN DIODE
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Diode Type: PIN - 1 Pair Common Cathode
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 0.3pF @ 5V, 1MHz
Voltage - Peak Reverse (Max): 50V
Supplier Device Package: PG-SOT23
Part Status: Active
Current - Max: 100 mA
Power Dissipation (Max): 250 mW
auf Bestellung 63000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2874+0.21 EUR
Mindestbestellmenge: 2874 Stücke
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IPP65R280C6 INFNS16437-1.pdf?t.download=true&u=5oefqw
IPP65R280C6
Hersteller: Infineon Technologies
Description: POWER FIELD-EFFECT TRANSISTOR, 6
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13.8A (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 4.4A, 10V
Power Dissipation (Max): 104W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 440µA
Supplier Device Package: PG-TO220-3-1
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 950 pF @ 100 V
Produkt ist nicht verfügbar
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IPI65R280C6 INFN-S-A0004583427-1.pdf?t.download=true&u=5oefqw
IPI65R280C6
Hersteller: Infineon Technologies
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13.8A (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 4.4A, 10V
Power Dissipation (Max): 104W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 440µA
Supplier Device Package: PG-TO262-3-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 950 pF @ 100 V
auf Bestellung 500 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
260+2.24 EUR
Mindestbestellmenge: 260 Stücke
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IPI65R280C6XKSA1 IPI65R280C6_2_0.pdf?folderId=db3a3043163797a6011637d4bae7003b&fileId=db3a30432a7fedfc012a8ac1e7c758cf
IPI65R280C6XKSA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 650V 13.8A TO262-3
Packaging: Bulk
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13.8A (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 4.4A, 10V
Power Dissipation (Max): 104W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 440µA
Supplier Device Package: PG-TO262-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 950 pF @ 100 V
auf Bestellung 500 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
176+3.06 EUR
Mindestbestellmenge: 176 Stücke
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IPB65R280E6 INFNS16656-1.pdf?t.download=true&u=5oefqw
IPB65R280E6
Hersteller: Infineon Technologies
Description: OPTLMOS N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13.8A (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 4.4A, 10V
Power Dissipation (Max): 104W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 440µA
Supplier Device Package: PG-TO263-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 950 pF @ 100 V
Produkt ist nicht verfügbar
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IPW65R280C6 INFN-S-A0004583427-1.pdf?t.download=true&u=5oefqw
IPW65R280C6
Hersteller: Infineon Technologies
Description: 650 V COOLMOS E6 POWER MOSFET
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13.8A (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 4.4A, 10V
Power Dissipation (Max): 104W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 440µA
Supplier Device Package: PG-TO247-3-41
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 950 pF @ 100 V
auf Bestellung 466 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
194+2.99 EUR
Mindestbestellmenge: 194 Stücke
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IPW65R280E6FKSA1 IPW65R280E6_2_1.pdf?folderId=db3a3043163797a6011637d4bae7003b&fileId=db3a30432a7fedfc012a9e4d5aa80758
IPW65R280E6FKSA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 650V 13.8A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13.8A (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 4.4A, 10V
Power Dissipation (Max): 104W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 440µA
Supplier Device Package: PG-TO247-3-1
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 950 pF @ 100 V
auf Bestellung 200 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
170+3.19 EUR
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IPW65R280E6 INFN-S-A0004457106-1.pdf?t.download=true&u=5oefqw
IPW65R280E6
Hersteller: Infineon Technologies
Description: 650 V COOLMOS E6 POWER MOSFET
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13.8A (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 4.4A, 10V
Power Dissipation (Max): 104W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 440µA
Supplier Device Package: PG-TO247-3-41
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 950 pF @ 100 V
Produkt ist nicht verfügbar
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IPP048N04NG INFNS15602-1.pdf?t.download=true&u=5oefqw
IPP048N04NG
Hersteller: Infineon Technologies
Description: IPP048N04 - 12V-300V N-CHANNEL P
Produkt ist nicht verfügbar
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IFX1117MEVHTMA1 IFX1117_Rev1.0_2-24-11.pdf
IFX1117MEVHTMA1
Hersteller: Infineon Technologies
Description: IC REG LIN POS ADJ 1A SOT223-4
Voltage - Output (Max): 13.6V
Supplier Device Package: PG-SOT223-4-21
Number of Regulators: 1
Voltage - Input (Max): 15V
Current - Quiescent (Iq): 5 mA
Output Configuration: Positive
Operating Temperature: 0°C ~ 125°C
Current - Output: 1A
Mounting Type: Surface Mount
Output Type: Adjustable
Package / Case: TO-261-4, TO-261AA
Packaging: Bulk
Protection Features: Over Current, Over Temperature, Short Circuit
Voltage Dropout (Max): 1.4V @ 1A
PSRR: 70dB (120Hz)
Voltage - Output (Min/Fixed): 1.25V
auf Bestellung 7981 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
961+0.62 EUR
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BCR129E6327 INFNS17180-1.pdf?t.download=true&u=5oefqw
BCR129E6327
Hersteller: Infineon Technologies
Description: BCR129 - DIGITAL TRANSISTOR
Resistor - Base (R1): 10 kOhms
Frequency - Transition: 150 MHz
Power - Max: 200 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Active
Supplier Device Package: PG-SOT23-3-11
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 5mA, 5V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Transistor Type: NPN - Pre-Biased
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Bulk
Produkt ist nicht verfügbar
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IPW65R095C7
IPW65R095C7
Hersteller: Infineon Technologies
Description: MOSFET N-CH 650V 24A TO247
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 95mOhm @ 11.8A, 10V
Power Dissipation (Max): 128W (Tc)
Vgs(th) (Max) @ Id: 4V @ 590µA
Supplier Device Package: PG-TO247
Part Status: Active
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2140 pF @ 400 V
Produkt ist nicht verfügbar
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IPD90N04S3-04 INFNS10879-1.pdf?t.download=true&u=5oefqw
IPD90N04S3-04
Hersteller: Infineon Technologies
Description: OPTLMOS N-CHANNEL POWER MOSFET
Vgs(th) (Max) @ Id: 4V @ 90µA
Power Dissipation (Max): 136W (Tc)
Rds On (Max) @ Id, Vgs: 3.6mOhm @ 80A, 10V
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Bulk
Input Capacitance (Ciss) (Max) @ Vds: 5200 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PG-TO252-3-11
Produkt ist nicht verfügbar
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IPB0401NM5SATMA1
Hersteller: Infineon Technologies
Description: TRENCH >=100V
Packaging: Tape & Reel (TR)
Part Status: Active
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
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TLE6251DSXT Infineon-TLE6251DS-DS-v03_10-EN.pdf?fileId=5546d46259d9a4bf015a3d2d98f4606e
TLE6251DSXT
Hersteller: Infineon Technologies
Description: IC TRANSCEIVER FULL 1/1 DSO-8
Part Status: Active
Duplex: Full
Receiver Hysteresis: 200 mV
Supplier Device Package: PG-DSO-8-16
Protocol: CANbus
Data Rate: 1MBd
Number of Drivers/Receivers: 1/1
Voltage - Supply: 4.75V ~ 5.25V
Operating Temperature: -40°C ~ 150°C (TJ)
Type: Transceiver
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Bulk
Produkt ist nicht verfügbar
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TLE6251DXUMA2 Infineon-TLE6251D-DS-v01_10-EN.pdf?fileId=5546d46259d9a4bf015a3d2d680b605d
TLE6251DXUMA2
Hersteller: Infineon Technologies
Description: IC TRANSCEIVER FULL 1/1 PGDSO816
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Type: Transceiver
Operating Temperature: -40°C ~ 150°C
Voltage - Supply: 4.75V ~ 5.25V
Number of Drivers/Receivers: 1/1
Data Rate: 1MBd
Protocol: CANbus
Supplier Device Package: PG-DSO-8-16
Receiver Hysteresis: 200 mV
Duplex: Full
Part Status: Active
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2500+1.45 EUR
Mindestbestellmenge: 2500 Stücke
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TLE6251DXUMA2 Infineon-TLE6251D-DS-v01_10-EN.pdf?fileId=5546d46259d9a4bf015a3d2d680b605d
TLE6251DXUMA2
Hersteller: Infineon Technologies
Description: IC TRANSCEIVER FULL 1/1 PGDSO816
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Type: Transceiver
Operating Temperature: -40°C ~ 150°C
Voltage - Supply: 4.75V ~ 5.25V
Number of Drivers/Receivers: 1/1
Data Rate: 1MBd
Protocol: CANbus
Supplier Device Package: PG-DSO-8-16
Receiver Hysteresis: 200 mV
Duplex: Full
Part Status: Active
auf Bestellung 3330 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
8+2.92 EUR
10+2.13 EUR
25+1.94 EUR
100+1.71 EUR
250+1.62 EUR
500+1.56 EUR
1000+1.55 EUR
Mindestbestellmenge: 8 Stücke
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TLE6251DS Infineon-TLE6251-2G-DS-v01_22-EN.pdf?fileId=5546d4625996c0c30159a766fb9977b8
TLE6251DS
Hersteller: Infineon Technologies
Description: IC TRANSCEIVER FULL 1/1 DSO-8
Packaging: Bulk
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Type: Transceiver
Operating Temperature: -40°C ~ 150°C
Voltage - Supply: 4.75V ~ 5.25V
Number of Drivers/Receivers: 1/1
Data Rate: 1MBd
Protocol: CANbus
Supplier Device Package: PG-DSO-8-16
Receiver Hysteresis: 200 mV
Duplex: Full
Part Status: Active
Produkt ist nicht verfügbar
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REFILD8150DC15ATOBO1 Infineon-Reference_design_REF_ILD8150_DC_1.5A_high_frequency_operation-ApplicationNotes-v01_00-EN.pdf?fileId=5546d4626d66c2b1016d73f768f820ae
REFILD8150DC15ATOBO1
Hersteller: Infineon Technologies
Description: EVAL BOARD FOR ILD8150
Features: Dimmable
Packaging: Box
Voltage - Input: 8V ~ 80V
Contents: Board(s)
Current - Output / Channel: 1.5A
Utilized IC / Part: ILD8150
Supplied Contents: Board(s)
Outputs and Type: 1 Non-Isolated Output
Part Status: Active
auf Bestellung 4 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1+154.57 EUR
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BSC430N25NSFDATMA1 Infineon-BSC430N25NSFD-DS-v02_01-EN.pdf?fileId=5546d462689a790c0168c7d453686447
BSC430N25NSFDATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 250V TSON-8
Vgs (Max): ±20V
Part Status: Active
Supplier Device Package: PG-TSON-8-3
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
Drain to Source Voltage (Vdss): 250 V
Produkt ist nicht verfügbar
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BSC430N25NSFDATMA1 Infineon-BSC430N25NSFD-DS-v02_01-EN.pdf?fileId=5546d462689a790c0168c7d453686447
BSC430N25NSFDATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 250V TSON-8
Drain to Source Voltage (Vdss): 250 V
Vgs (Max): ±20V
Part Status: Active
Supplier Device Package: PG-TSON-8-3
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
auf Bestellung 82 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3+9.59 EUR
10+6.39 EUR
Mindestbestellmenge: 3 Stücke
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SFH756 SFH756_756V.pdf
Hersteller: Infineon Technologies
Description: XMITTER FIBER OPTIC 660NM
Current - DC Forward (If) (Max): 50 mA
Voltage - DC Reverse (Vr) (Max): 3 V
Capacitance: 30 pF
Spectral Bandwidth: 25nm
Voltage - Forward (Vf) (Typ): 2.1V
Wavelength: 660nm
Packaging: Bulk
auf Bestellung 3691 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
84+6.46 EUR
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CY7C1460SV25-250BZC
CY7C1460SV25-250BZC
Hersteller: Infineon Technologies
Description: IC SRAM 36MBIT PARALLEL 165FBGA
auf Bestellung 675 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
6+101.34 EUR
Mindestbestellmenge: 6 Stücke
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TLE4906L Infineon-TLE4906-DS-v02_00-en.pdf?fileId=db3a304316f66ee8011754425fe50642
TLE4906L
Hersteller: Infineon Technologies
Description: TLE4906 - HALL SWITCH
Part Status: Active
Test Condition: 25°C
Supplier Device Package: PG-SSO-3-2
Current - Supply (Max): 6mA
Current - Output (Max): 20mA
Sensing Range: 13.5mT Trip, 5mT Release
Technology: Hall Effect
Voltage - Supply: 2.7V ~ 18V
Operating Temperature: -40°C ~ 150°C (TJ)
Function: Unipolar Switch
Mounting Type: Through Hole
Polarization: South Pole
Output Type: Open Collector
Package / Case: 3-SSIP, SSO-3-02
Features: Temperature Compensated
Packaging: Bulk
Produkt ist nicht verfügbar
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IAUZ40N06S5N050ATMA1 Infineon-IAUZ40N06S5N050-DataSheet-v01_00-EN.pdf?fileId=5546d46271bf4f920171f47191a561b9
IAUZ40N06S5N050ATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 60V 40A TSDSON-8-33
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tj)
Rds On (Max) @ Id, Vgs: 5mOhm @ 20A, 10V
Power Dissipation (Max): 71W (Tc)
Vgs(th) (Max) @ Id: 3.4V @ 29µA
Supplier Device Package: PG-TSDSON-8-33
Part Status: Active
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 30.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 30 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
5000+0.89 EUR
Mindestbestellmenge: 5000 Stücke
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IAUZ40N06S5N050ATMA1 Infineon-IAUZ40N06S5N050-DataSheet-v01_00-EN.pdf?fileId=5546d46271bf4f920171f47191a561b9
IAUZ40N06S5N050ATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 60V 40A TSDSON-8-33
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tj)
Rds On (Max) @ Id, Vgs: 5mOhm @ 20A, 10V
Power Dissipation (Max): 71W (Tc)
Vgs(th) (Max) @ Id: 3.4V @ 29µA
Supplier Device Package: PG-TSDSON-8-33
Grade: Automotive
Part Status: Active
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 30.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 30 V
Qualification: AEC-Q101
auf Bestellung 7900 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
7+3.47 EUR
10+2.21 EUR
100+1.49 EUR
500+1.17 EUR
1000+1.07 EUR
2000+1 EUR
Mindestbestellmenge: 7 Stücke
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IPP040N06N3G INFNS17005-1.pdf?t.download=true&u=5oefqw
IPP040N06N3G
Hersteller: Infineon Technologies
Description: POWER FIELD-EFFECT TRANSISTOR, 9
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 130A (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 90A, 10V
Power Dissipation (Max): 188W (Tc)
Vgs(th) (Max) @ Id: 4V @ 90µA
Supplier Device Package: PG-TO220-3-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 98 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11000 pF @ 30 V
Produkt ist nicht verfügbar
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IGW15T120 INFNS14050-1.pdf?t.download=true&u=5oefqw
IGW15T120
Hersteller: Infineon Technologies
Description: IGW15T120 - DISCRETE IGBT WITHOU
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 15A
Supplier Device Package: PG-TO247-3-21
Td (on/off) @ 25°C: 50ns/520ns
Switching Energy: 1.3mJ (on), 1.4mJ (off)
Test Condition: 600V, 15A, 56Ohm, 15V
Gate Charge: 85 nC
Current - Collector (Ic) (Max): 30 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 45 A
Power - Max: 110 W
auf Bestellung 7690 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
136+4.24 EUR
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BTS442E2 description INFNS16405-1.pdf?t.download=true&u=5oefqw
BTS442E2
Hersteller: Infineon Technologies
Description: BTS442 - PROFET - SMART HIGH SID
Features: Auto Restart, Status Flag
Packaging: Bulk
Package / Case: TO-220-5 Formed Leads
Output Type: N-Channel
Mounting Type: Through Hole
Number of Outputs: 1
Interface: Logic
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 15mOhm
Input Type: Non-Inverting
Voltage - Load: 4.5V ~ 42V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 21A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-TO220-5-11
Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, Over Voltage
Part Status: Active
Produkt ist nicht verfügbar
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IKW75N60TXK INFNS30104-1.pdf?t.download=true&u=5oefqw
IKW75N60TXK
Hersteller: Infineon Technologies
Description: IKW75N60 - DISCRETE IGBT WITH AN
Packaging: Bulk
Part Status: Active
Produkt ist nicht verfügbar
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IKW75N60H3 INFNS17451-1.pdf?t.download=true&u=5oefqw
Hersteller: Infineon Technologies
Description: IKW75N60 - DISCRETE IGBT WITH AN
Power - Max: 428 W
Current - Collector Pulsed (Icm): 225 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 80 A
Part Status: Active
Gate Charge: 470 nC
Test Condition: 400V, 75A, 5.2Ohm, 15V
Switching Energy: 3mJ (on), 1.7mJ (off)
Td (on/off) @ 25°C: 31ns/265ns
IGBT Type: Trench Field Stop
Supplier Device Package: PG-TO247-3-41
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 75A
Reverse Recovery Time (trr): 190 ns
Input Type: Standard
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Bulk
Produkt ist nicht verfügbar
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