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BTT60302EKBXUMA1 BTT60302EKBXUMA1 Infineon Technologies BTT6030-2EKB.pdf Description: IC PWR SWITCH N-CHAN 1:1 DSO-14
Qualification: AEC-Q100
Grade: Automotive
Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, Over Voltage
Supplier Device Package: PG-DSO-14-40-EP
Ratio - Input:Output: 1:1
Current - Output (Max): 4A
Voltage - Supply (Vcc/Vdd): Not Required
Voltage - Load: 5V ~ 36V
Input Type: Non-Inverting
Rds On (Typ): 32mOhm
Output Configuration: High Side
Operating Temperature: -40°C ~ 150°C (TJ)
Switch Type: General Purpose
Interface: On/Off
Number of Outputs: 2
Mounting Type: Surface Mount
Output Type: N-Channel
Package / Case: 14-SOIC (0.154", 3.90mm Width) Exposed Pad
Packaging: Cut Tape (CT)
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3+6.95 EUR
10+5.26 EUR
25+4.84 EUR
100+4.38 EUR
250+4.16 EUR
500+4.03 EUR
1000+3.92 EUR
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CY29774AXI CY29774AXI Infineon Technologies Description: IC FANOUT DIST 52TQFP
Packaging: Bulk
Package / Case: 52-TQFP
Mounting Type: Surface Mount
Output: LVCMOS
Frequency - Max: 125MHz
Type: Fanout Distribution, Multiplexer, Zero Delay Buffer
Input: LVCMOS
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2.375V ~ 3.465V
Ratio - Input:Output: 2:14
Differential - Input:Output: No/No
Supplier Device Package: 52-TQFP (10x10)
PLL: Yes with Bypass
Divider/Multiplier: Yes/No
Number of Circuits: 1
DigiKey Programmable: Not Verified
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CY7C1297H-133AXC CY7C1297H-133AXC Infineon Technologies CY7C1297H.pdf Description: IC SRAM 1MBIT PARALLEL 100TQFP
DigiKey Programmable: Not Verified
Memory Organization: 64K x 18
Memory Interface: Parallel
Supplier Device Package: 100-TQFP (14x20)
Memory Format: SRAM
Clock Frequency: 133 MHz
Technology: SRAM - Synchronous, SDR
Voltage - Supply: 3.135V ~ 3.6V
Operating Temperature: 0°C ~ 70°C (TA)
Memory Type: Volatile
Memory Size: 1Mbit
Mounting Type: Surface Mount
Package / Case: 100-LQFP
Packaging: Tray
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F4-50R12MS4 Infineon Technologies INFNS28281-1.pdf?t.download=true&u=5oefqw Description: IGBT, 70A, 1200V, N-CHANNEL
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Full Bridge Inverter
Operating Temperature: -40°C ~ 125°C (TJ)
Vce(on) (Max) @ Vge, Ic: 3.75V @ 15V, 50A
NTC Thermistor: Yes
Current - Collector (Ic) (Max): 70 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 355 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 3.4 nF @ 25 V
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FF450R12ME3BOSA1 FF450R12ME3BOSA1 Infineon Technologies Description: IGBT MOD 1200V 600A 2100W MOD
Input Capacitance (Cies) @ Vce: 32 nF @ 25 V
Current - Collector Cutoff (Max): 5 mA
Power - Max: 2100 W
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 600 A
IGBT Type: Trench Field Stop
Supplier Device Package: Module
NTC Thermistor: Yes
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 450A
Operating Temperature: -40°C ~ 125°C
Configuration: Half Bridge
Input: Standard
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Bulk
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FF450R12ME4B11BPSA1 FF450R12ME4B11BPSA1 Infineon Technologies Infineon-FF450R12ME4_B11-DS-v02_00-en_de.pdf?fileId=db3a3043353fdc16013543e3dc143207 Description: IGBT MOD 1200V 675A 2250W
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: 2 Independent
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 450A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Part Status: Discontinued at Digi-Key
Current - Collector (Ic) (Max): 675 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 2250 W
Current - Collector Cutoff (Max): 3 mA
Input Capacitance (Cies) @ Vce: 28 nF @ 25 V
Produkt ist nicht verfügbar
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F450R12KS4BOSA1 F450R12KS4BOSA1 Infineon Technologies Infineon-F4_50R12KS4-DS-v02_00-en_de.pdf?fileId=db3a304412b407950112b43163e9542e Description: IGBT MOD 1200V 70A 355W
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 125°C
Vce(on) (Max) @ Vge, Ic: 3.75V @ 15V, 50A
NTC Thermistor: Yes
Supplier Device Package: Module
Part Status: Discontinued at Digi-Key
Current - Collector (Ic) (Max): 70 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 355 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 3.4 nF @ 25 V
Produkt ist nicht verfügbar
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F450R12KS4B11BOSA1 F450R12KS4B11BOSA1 Infineon Technologies Infineon-F4_50R12KS4_B11-DS-v02_00-en_de.pdf?fileId=db3a3043345a30bc01346aa2466e1366 Description: IGBT MOD 1200V 70A 355W MOD
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 125°C
Vce(on) (Max) @ Vge, Ic: 3.75V @ 15V, 50A
NTC Thermistor: Yes
Supplier Device Package: Module
Part Status: Discontinued at Digi-Key
Current - Collector (Ic) (Max): 70 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 355 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 3.4 nF @ 25 V
Produkt ist nicht verfügbar
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FF450R12KE4PHOSA1 FF450R12KE4PHOSA1 Infineon Technologies Infineon-FF450R12KE4P-DS-v02_00-EN.pdf?fileId=5546d46253a864fe0153e679fa2d78c7 Description: IGBT MODULE 1200V 450A
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge Inverter
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 450A
NTC Thermistor: No
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 450 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 28 nF @ 25 V
Produkt ist nicht verfügbar
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FF450R12ME3BOSA1 FF450R12ME3BOSA1 Infineon Technologies Description: IGBT MOD 1200V 600A 2100W MOD
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge
Operating Temperature: -40°C ~ 125°C
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 450A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 600 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 2100 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 32 nF @ 25 V
Produkt ist nicht verfügbar
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ICB1FL01G ICB1FL01G Infineon Technologies ICB1FL01G.pdf Description: IC PFC/BALLAST CTR 100KHZ DSO-18
auf Bestellung 29880 Stücke:
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TLD5098EPXUMA1 TLD5098EPXUMA1 Infineon Technologies Infineon-TLD5098EP-DataSheet-v01_00-EN.pdf?fileId=5546d4626c1f3dc3016c620b67681811 Description: IC LED DRV CTRL PWM 90MA 14TSDSO
Packaging: Tape & Reel (TR)
Package / Case: 14-TSSOP (0.154", 3.90mm Width) Exposed Pad
Voltage - Output: 4.5V ~ 5.5V
Mounting Type: Surface Mount
Number of Outputs: 1
Frequency: 100kHz ~ 500kHz
Type: DC DC Controller
Operating Temperature: -40°C ~ 150°C (TJ)
Current - Output / Channel: 90mA
Internal Switch(s): No
Topology: Flyback, SEPIC, Step-Down (Buck), Step-Up (Boost)
Supplier Device Package: PG-TSDSO-14
Dimming: Analog, PWM
Voltage - Supply (Min): 4.5V
Voltage - Supply (Max): 45V
Part Status: Active
Grade: Automotive
Qualification: AEC-Q100
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BTF3050EJDEMOBOARDTOBO1 BTF3050EJDEMOBOARDTOBO1 Infineon Technologies Infineon-Demoboard_BTFxxxEJ-UserManual-v01_00-EN.pdf?fileId=5546d462712ef9b701712fc897870114 Description: BTF3050EJ DEMOBOARD
Packaging: Bulk
Function: Switch
Type: Power Management
Contents: Board(s)
Utilized IC / Part: BTF3050EJ
Platform: Arduino
Produkt ist nicht verfügbar
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BTF3125EJDEMOBOARDTOBO1 BTF3125EJDEMOBOARDTOBO1 Infineon Technologies Infineon-Demoboard_BTFxxxEJ-UserManual-v01_00-EN.pdf?fileId=5546d462712ef9b701712fc897870114 Description: BTF3125J DEMOBOARD
Packaging: Bulk
Function: Switch
Type: Power Management
Contents: Board(s)
Utilized IC / Part: BTF3125EJ
Platform: Arduino
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BTF3035EJDEMOBOARDTOBO1 BTF3035EJDEMOBOARDTOBO1 Infineon Technologies Infineon-Demoboard_BTFxxxEJ-UserManual-v01_00-EN.pdf?fileId=5546d462712ef9b701712fc897870114 Description: BTF3035EJ DEMOBOARD
Function: Switch
Packaging: Bulk
Part Status: Active
Platform: Arduino
Utilized IC / Part: BTF3035EJ
Contents: Board(s)
Type: Power Management
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DF100R07W1H5FPB54BPSA2 DF100R07W1H5FPB54BPSA2 Infineon Technologies Infineon-DF100R07W1H5FP_B54-DS-v03_00-EN.pdf?fileId=5546d4625b3ca4ec015b5761855903ab Description: IGBT MODULE 650V 40A MODULE
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: 2 Independent
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.55V @ 15V, 25A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 40 µA
Input Capacitance (Cies) @ Vce: 2.8 nF @ 25 V
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DF100R07W1H5FPB53BPSA2 DF100R07W1H5FPB53BPSA2 Infineon Technologies Infineon-DF100R07W1H5FP_B53-DataSheet-v03_00-EN.pdf?fileId=5546d46259d9a4bf015a64b1b0c55aed Description: IGBT MODULE 650V 40A MODULE
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: 2 Independent
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 1.55V @ 15V, 25A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 40 µA
Input Capacitance (Cies) @ Vce: 2.8 nF @ 25 V
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BFG 19S E6327 BFG 19S E6327 Infineon Technologies BFG19S.pdf Description: RF TRANS NPN 15V 5.5GHZ SOT223-4
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 14dB ~ 8.5dB
Power - Max: 1W
Current - Collector (Ic) (Max): 210mA
Voltage - Collector Emitter Breakdown (Max): 15V
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 70mA, 8V
Frequency - Transition: 5.5GHz
Noise Figure (dB Typ @ f): 2dB ~ 3dB @ 900MHz ~ 1.8GHz
Supplier Device Package: PG-SOT223-4
Produkt ist nicht verfügbar
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ISC045N03L5SATMA1 ISC045N03L5SATMA1 Infineon Technologies Infineon-ISC045N03L5S-DataSheet-v02_00-EN.pdf?fileId=5546d46270c4f93e0170e8c2360e098e Description: MOSFET N-CH 30V 18A/63A TDSON
Input Capacitance (Ciss) (Max) @ Vds: 870 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PG-TDSON-8-6
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 2.5W (Ta), 30W (Tc)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 63A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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TLE4208G TLE4208G Infineon Technologies TLE4208G_2016.pdf?t.download=true&u=5oefqw Description: BRUSH DC MOTOR CONTROLLER, 1A
Operating Temperature: -40°C ~ 150°C (TJ)
Interface: Parallel
Current - Output: 800mA
Function: Driver - Fully Integrated, Control and Power Stage
Mounting Type: Surface Mount
Package / Case: 28-SOIC (0.295", 7.50mm Width)
Packaging: Bulk
Part Status: Active
Motor Type - AC, DC: Brushed DC
Supplier Device Package: P-DSO-28
Voltage - Load: 5V ~ 18V
Technology: Bipolar
Applications: General Purpose
Voltage - Supply: 5V ~ 18V
Output Configuration: Half Bridge (4)
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IGD01N120H2BUMA1 IGD01N120H2BUMA1 Infineon Technologies INFNS16255-1.pdf?t.download=true&u=5oefqw Description: POWER BIPOLAR TRANSISTOR, 3.2A I
Produkt ist nicht verfügbar
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BB914E6327HTSA1 BB914E6327HTSA1 Infineon Technologies INFNS15712-1.pdf?t.download=true&u=5oefqw Description: DIODE VARACTOR 18V DUAL SOT23-3
Packaging: Cut Tape (CT)
Capacitance Ratio: 2.42
Voltage - Peak Reverse (Max): 18 V
Part Status: Active
Supplier Device Package: PG-SOT23
Capacitance Ratio Condition: C2/C8
Capacitance @ Vr, F: 19.75pF @ 8V, 1MHz
Operating Temperature: -55°C ~ 125°C (TJ)
Diode Type: 1 Pair Common Cathode
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
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18+1.02 EUR
29+0.63 EUR
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IPD082N10N3GATMA1 IPD082N10N3GATMA1 Infineon Technologies Infineon-IPP086N10N3G-DS-v02_06-en.pdf?fileId=db3a30431ce5fb52011d1ac5c8fa1358 Description: MOSFET N-CH 100V 80A TO252-3
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Supplier Device Package: PG-TO252-3
Vgs(th) (Max) @ Id: 3.5V @ 75µA
Power Dissipation (Max): 125W (Tc)
Rds On (Max) @ Id, Vgs: 8.2mOhm @ 73A, 10V
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 3980 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
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10+2.45 EUR
100+1.68 EUR
500+1.34 EUR
1000+1.33 EUR
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IR4227PBF IR4227PBF Infineon Technologies IRSDS09409-1.pdf?t.download=true&u=5oefqw Description: GATE DRIVER IC
Supplier Device Package: 8-PDIP
Input Type: Non-Inverting
Voltage - Supply: 6V ~ 20V
Operating Temperature: -40°C ~ 125°C (TJ)
Mounting Type: Through Hole
Package / Case: 8-DIP (0.300", 7.62mm)
Packaging: Bulk
Part Status: Active
Current - Peak Output (Source, Sink): 2.3A, 3.3A
Logic Voltage - VIL, VIH: 0.8V, 2.7V
Gate Type: IGBT, N-Channel MOSFET
Number of Drivers: 2
Driven Configuration: Low-Side
Channel Type: Independent
Rise / Fall Time (Typ): 15ns, 10ns
Produkt ist nicht verfügbar
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IPD80R2K7C3AATMA1 IPD80R2K7C3AATMA1 Infineon Technologies Infineon-IPD80R2K7C3A-DS-v01_01-EN.pdf?fileId=5546d4625e763904015ec2d9c72064a0 Description: MOSFET N-CH TO252-3
Power Dissipation (Max): 42W (Tc)
Rds On (Max) @ Id, Vgs: 2.7Ohm @ 1.2A, 10V
Current - Continuous Drain (Id) @ 25°C: 2A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 290 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 1.5 nC @ 10 V
Drain to Source Voltage (Vdss): 800 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-252AA (DPAK)
Vgs(th) (Max) @ Id: 3.9V @ 250µA
Produkt ist nicht verfügbar
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BSC889N03MSG BSC889N03MSG Infineon Technologies INFNS15761-1.pdf?t.download=true&u=5oefqw Description: N-CHANNEL POWER MOSFET
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PG-TSDSON-8
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 2.5W (Ta), 28W (Tc)
Rds On (Max) @ Id, Vgs: 9.1mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 44A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Bulk
Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
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BSC119N03MSCG BSC119N03MSCG Infineon Technologies INFNS13709-1.pdf?t.download=true&u=5oefqw Description: N-CHANNEL POWER MOSFET
Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 39A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Bulk
Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PG-TDSON-8
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 2.5W (Ta), 28W (Tc)
Rds On (Max) @ Id, Vgs: 11.9mOhm @ 30A, 10V
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BSC889N03LSG BSC889N03LSG Infineon Technologies INFNS15760-1.pdf?t.download=true&u=5oefqw Description: N-CHANNEL POWER MOSFET
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PG-TDSON-8
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Power Dissipation (Max): 2.5W (Ta), 28W (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 45A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Bulk
auf Bestellung 329990 Stücke:
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ISC019N03L5SATMA1 ISC019N03L5SATMA1 Infineon Technologies Infineon-ISC019N03L5S-DataSheet-v02_00-EN.pdf?fileId=5546d46270c4f93e0170e8a6c201097f Description: MOSFET N-CH 30V 28A/100A TDSON
Current - Continuous Drain (Id) @ 25°C: 28A (Ta), 100A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 2800 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PG-TDSON-8-5
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 2.5W (Ta), 69W (Tc)
Rds On (Max) @ Id, Vgs: 1.9mOhm @ 30A, 10V
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ISC019N03L5SATMA1 ISC019N03L5SATMA1 Infineon Technologies Infineon-ISC019N03L5S-DataSheet-v02_00-EN.pdf?fileId=5546d46270c4f93e0170e8a6c201097f Description: MOSFET N-CH 30V 28A/100A TDSON
Input Capacitance (Ciss) (Max) @ Vds: 2800 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PG-TDSON-8-5
Rds On (Max) @ Id, Vgs: 1.9mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 28A (Ta), 100A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 2.5W (Ta), 69W (Tc)
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500+0.56 EUR
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ISZ019N03L5SATMA1 ISZ019N03L5SATMA1 Infineon Technologies Infineon-ISZ019N03L5S-DataSheet-v02_00-EN.pdf?fileId=5546d46270c4f93e0170e8c249de0991 Description: MOSFET N-CH 30V 22A/40A TSDSON
Input Capacitance (Ciss) (Max) @ Vds: 2800 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PG-TSDSON-8-FL
Vgs(th) (Max) @ Id: 2V @ 250µA
Rds On (Max) @ Id, Vgs: 1.9mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 40A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
auf Bestellung 5000 Stücke:
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ISZ019N03L5SATMA1 ISZ019N03L5SATMA1 Infineon Technologies Infineon-ISZ019N03L5S-DataSheet-v02_00-EN.pdf?fileId=5546d46270c4f93e0170e8c249de0991 Description: MOSFET N-CH 30V 22A/40A TSDSON
Input Capacitance (Ciss) (Max) @ Vds: 2800 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PG-TSDSON-8-FL
Vgs(th) (Max) @ Id: 2V @ 250µA
Rds On (Max) @ Id, Vgs: 1.9mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 40A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
auf Bestellung 9848 Stücke:
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8+2.45 EUR
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100+1.16 EUR
500+0.94 EUR
1000+0.87 EUR
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BSC0302LSATMA1 BSC0302LSATMA1 Infineon Technologies Infineon-BSC0302LS-DataSheet-v02_00-EN.pdf?fileId=5546d462700c0ae601708b866a8713cd Description: MOSFET N-CH 120V 12A/99A TDSON
Part Status: Active
Supplier Device Package: PG-TDSON-8-7
Vgs(th) (Max) @ Id: 2.4V @ 112µA
Power Dissipation (Max): 156W (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 99A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 7400 pF @ 60 V
Gate Charge (Qg) (Max) @ Vgs: 79 nC @ 10 V
Drain to Source Voltage (Vdss): 120 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
auf Bestellung 7100 Stücke:
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100+2.03 EUR
500+1.64 EUR
1000+1.51 EUR
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IPD65R600C6BTMA1 IPD65R600C6BTMA1 Infineon Technologies Infineon-IPD65R600C6-DS-v02_01-en.pdf?folderId=5546d4694909da4801490a07012f053b&fileId=db3a30433f1b26e8013f2ceafdee37c4 Description: MOSFET N-CH 650V 7.3A TO252-3
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.3A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 2.1A, 10V
Power Dissipation (Max): 63W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 210µA
Supplier Device Package: PG-TO252-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 440 pF @ 100 V
auf Bestellung 12500 Stücke:
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IPP70N04S3-07 IPP70N04S3-07 Infineon Technologies INFNS10667-1.pdf?t.download=true&u=5oefqw Description: N-CHANNEL POWER MOSFET
Input Capacitance (Ciss) (Max) @ Vds: 2700 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PG-TO220-3-1
Vgs(th) (Max) @ Id: 4V @ 50µA
Power Dissipation (Max): 79W (Tc)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 70A, 10V
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Bulk
Produkt ist nicht verfügbar
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CY96F613RBPMC-GS-UJE2 CY96F613RBPMC-GS-UJE2 Infineon Technologies Infineon-CY96610_SERIES_F2MC-16FX_16_BIT_PROPRIETARY_MICROCONTROLLER-AdditionalTechnicalInformation-v07_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0edae3195d8d&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all Description: IC MCU 16BIT 96KB FLASH 48LQFP
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 Mindestbestellmenge: 2500 Stücke
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CY96F612RBPMC-GS-UJE1 CY96F612RBPMC-GS-UJE1 Infineon Technologies Infineon-CY96610_SERIES_F2MC-16FX_16_BIT_PROPRIETARY_MICROCONTROLLER-AdditionalTechnicalInformation-v07_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0edae3195d8d&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all Description: IC MCU 16BIT 64KB FLASH 48LQFP
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 Mindestbestellmenge: 2500 Stücke
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CY96F613ABPMC-GS-UJE1 CY96F613ABPMC-GS-UJE1 Infineon Technologies Infineon-CY96610_SERIES_F2MC-16FX_16_BIT_PROPRIETARY_MICROCONTROLLER-AdditionalTechnicalInformation-v07_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0edae3195d8d&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all Description: IC MCU 16BIT 96KB FLASH 48LQFP
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CY96F613RBPMC-GS-UJE1 CY96F613RBPMC-GS-UJE1 Infineon Technologies Infineon-CY96610_SERIES_F2MC-16FX_16_BIT_PROPRIETARY_MICROCONTROLLER-AdditionalTechnicalInformation-v07_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0edae3195d8d&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all Description: IC MCU 16BIT 96KB FLASH 48LQFP
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CY96F615RBPMC-GS-UJE1 CY96F615RBPMC-GS-UJE1 Infineon Technologies Infineon-CY96610_SERIES_F2MC-16FX_16_BIT_PROPRIETARY_MICROCONTROLLER-AdditionalTechnicalInformation-v07_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0edae3195d8d&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all Description: IC MCU 16BIT 160KB FLASH 48LQFP
Produkt ist nicht verfügbar
 Mindestbestellmenge: 2500 Stücke
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MB96F625RBPMC1-GS119JAE2 Infineon Technologies Description: IC AUTO MCU
DigiKey Programmable: Not Verified
Part Status: Obsolete
Packaging: Tray
Produkt ist nicht verfügbar
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MB96F625RBPMC1-GS120JAE2 Infineon Technologies Description: IC AUTO MCU
DigiKey Programmable: Not Verified
Part Status: Obsolete
Packaging: Tray
Produkt ist nicht verfügbar
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IPD65R600E6 IPD65R600E6 Infineon Technologies INFN-S-A0004583418-1.pdf?t.download=true&u=5oefqw Description: COOLMOS N-CHANNEL POWER MOSFET
Input Capacitance (Ciss) (Max) @ Vds: 440 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PG-TO252-3-313
Vgs(th) (Max) @ Id: 3.5V @ 210µA
Power Dissipation (Max): 63W (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 2.1A, 10V
Current - Continuous Drain (Id) @ 25°C: 7.3A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Bulk
Produkt ist nicht verfügbar
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IPD65R600E6TR IPD65R600E6TR Infineon Technologies Infineon-IPD65R600E6-DS-v02_02-EN.pdf?fileId=db3a30433efacd9a013f0a0c175b3080 Description: N-CHANNEL POWER MOSFET
Input Capacitance (Ciss) (Max) @ Vds: 440 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: PG-TO252-3-313
Vgs(th) (Max) @ Id: 3.5V @ 210µA
Power Dissipation (Max): 63W (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 2.1A, 10V
Current - Continuous Drain (Id) @ 25°C: 7.3A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Bulk
Produkt ist nicht verfügbar
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IPD65R600E6BTMA1 IPD65R600E6BTMA1 Infineon Technologies Infineon-IPD65R600E6-DS-v02_01-en.pdf?folderId=5546d4694909da4801490a07012f053b&fileId=db3a30433efacd9a013f0a0c175b3080 Description: MOSFET N-CH 650V 7.3A TO252-3
Input Capacitance (Ciss) (Max) @ Vds: 440 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: PG-TO252-3
Vgs(th) (Max) @ Id: 3.5V @ 210µA
Power Dissipation (Max): 63W (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 2.1A, 10V
Current - Continuous Drain (Id) @ 25°C: 7.3A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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IPD65R600C6ATMA1 IPD65R600C6ATMA1 Infineon Technologies Infineon-IPD65R600C6-DS-v02_01-en.pdf?folderId=5546d4694909da4801490a07012f053b&fileId=db3a30433f1b26e8013f2ceafdee37c4 Description: LOW POWER_LEGACY
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.3A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 2.1A, 10V
Power Dissipation (Max): 63W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 210µA
Supplier Device Package: PG-TO252-3-313
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 440 pF @ 100 V
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EVAL6EDL04I06PTTOBO1 EVAL6EDL04I06PTTOBO1 Infineon Technologies Infineon-Evaluationboard_6EDL04I06PT-ApplicationNotes-v02_00-EN.pdf?fileId=db3a304340155f3d014029b1924102ff Description: EVAL BOARD FOR 6EDL04I06P
Packaging: Bulk
Function: Gate Driver
Type: Power Management
Utilized IC / Part: 6EDL04I06P
Supplied Contents: Board(s)
Part Status: Active
Contents: Board(s)
auf Bestellung 3 Stücke:
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1+253.19 EUR
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BC817K40WE6327 BC817K40WE6327 Infineon Technologies INFNS16504-1.pdf?t.download=true&u=5oefqw Description: BIPOLAR GEN PURPOSE TRANSISTOR
Power - Max: 500 mW
Voltage - Collector Emitter Breakdown (Max): 45 V
Current - Collector (Ic) (Max): 500 mA
Supplier Device Package: PG-SOT323-3-1
Frequency - Transition: 170MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 100mA, 1V
Current - Collector Cutoff (Max): 100nA (ICBO)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Packaging: Bulk
Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
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BC817K-40WE6327 BC817K-40WE6327 Infineon Technologies INFNS16504-1.pdf?t.download=true&u=5oefqw Description: BIPOLAR GEN PURPOSE TRANSISTOR
Power - Max: 500 mW
Current - Collector (Ic) (Max): 500 mA
Supplier Device Package: PG-SOT323-3-1
Frequency - Transition: 170MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 100mA, 1V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Packaging: Bulk
Voltage - Collector Emitter Breakdown (Max): 45 V
Produkt ist nicht verfügbar
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IPB052N04NG IPB052N04NG Infineon Technologies INFNS16285-1.pdf?t.download=true&u=5oefqw Description: N-CHANNEL POWER MOSFET
Input Capacitance (Ciss) (Max) @ Vds: 3300 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: PG-TO-263-3-2
Vgs(th) (Max) @ Id: 4V @ 33µA
Power Dissipation (Max): 79W (Tc)
Rds On (Max) @ Id, Vgs: 5.2mOhm @ 70A, 10V
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Bulk
auf Bestellung 1989 Stücke:
Lieferzeit 10-14 Tag (e)
693+0.7 EUR
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BSZ028N04LSATMA1 BSZ028N04LSATMA1 Infineon Technologies Infineon-BSZ028N04LS-DS-v02_01-EN.pdf?fileId=db3a304342371bb001424bb10c8b6fff Description: MOSFET N-CH 40V 21A/40A TSDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs: 2.8mOhm @ 20A, 10V
Power Dissipation (Max): 2.1W (Ta), 63W (Tc)
Supplier Device Package: PG-TSDSON-8-FL
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2300 pF @ 20 V
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
5000+0.6 EUR
Mindestbestellmenge: 5000 Stücke
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TLD5085EJ TLD5085EJ Infineon Technologies 38725609546442328tld5085ej_ds_v11_december2009.pdffolderiddb3a3043163797a6011667aa.pdf?t.download=true&u=5oefqw Description: SWITCHING REGULATOR, VOLT-MODE
Packaging: Bulk
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Voltage - Output: 0.6V ~ 16V
Mounting Type: Surface Mount
Number of Outputs: 1
Frequency: 370kHz
Type: DC DC Regulator
Operating Temperature: -40°C ~ 150°C (TJ)
Applications: Automotive, Backlight
Current - Output / Channel: 1.8A
Internal Switch(s): Yes
Topology: Step-Down (Buck)
Supplier Device Package: PG-DSO-8-27
Dimming: PWM
Voltage - Supply (Min): 4.75V
Voltage - Supply (Max): 45V
Part Status: Active
auf Bestellung 14226 Stücke:
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136+3.56 EUR
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IKB20N60H3ATMA1 IKB20N60H3ATMA1 Infineon Technologies IKB20N60H3_Rev1_1G.pdf?folderId=db3a3043156fd5730115f56849b61941&fileId=db3a30432a40a650012a476e38862bd0 Description: IGBT TRENCH FS 600V 40A TO263-3
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 112 ns
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 20A
Supplier Device Package: PG-TO263-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 16ns/194ns
Switching Energy: 690µJ
Test Condition: 400V, 20A, 14.6Ohm, 15V
Gate Charge: 120 nC
Part Status: Active
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 80 A
Power - Max: 170 W
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1000+1.79 EUR
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IKB20N60H3ATMA1 IKB20N60H3ATMA1 Infineon Technologies IKB20N60H3_Rev1_1G.pdf?folderId=db3a3043156fd5730115f56849b61941&fileId=db3a30432a40a650012a476e38862bd0 Description: IGBT TRENCH FS 600V 40A TO263-3
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 112 ns
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 20A
Supplier Device Package: PG-TO263-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 16ns/194ns
Switching Energy: 690µJ
Test Condition: 400V, 20A, 14.6Ohm, 15V
Gate Charge: 120 nC
Part Status: Active
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 80 A
Power - Max: 170 W
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IPI072N10N3 G Infineon Technologies INFNS16324-1.pdf?t.download=true&u=5oefqw Description: N-CHANNEL POWER MOSFET
Input Capacitance (Ciss) (Max) @ Vds: 4910 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Part Status: Active
Supplier Device Package: PG-TO262-3-1
Vgs(th) (Max) @ Id: 3.5V @ 90µA
Power Dissipation (Max): 150W (Tc)
Rds On (Max) @ Id, Vgs: 7.2mOhm @ 80A, 10V
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Packaging: Bulk
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IPI072N10N3GXK IPI072N10N3GXK Infineon Technologies Description: MOSFET N-CH 100V 80A TO262-3
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 4910 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Part Status: Obsolete
Supplier Device Package: PG-TO262-3
Vgs(th) (Max) @ Id: 3.5V @ 90µA
Power Dissipation (Max): 150W (Tc)
Rds On (Max) @ Id, Vgs: 7.2mOhm @ 80A, 10V
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Produkt ist nicht verfügbar
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IHY30N160R2XK Infineon Technologies Description: IGBT, N-CHANNEL
Packaging: Bulk
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IRL520NSTRLPBF IRL520NSTRLPBF Infineon Technologies irl520nspbf.pdf?fileId=5546d462533600a40153565fa45e255d Description: MOSFET N-CH 100V 10A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 180mOhm @ 6A, 10V
Power Dissipation (Max): 3.8W (Ta), 48W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: D2PAK
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 440 pF @ 25 V
Produkt ist nicht verfügbar
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IFS75S12N3T4_B11 Infineon Technologies Description: TRANSISTOR IGBT MODULE
Packaging: Bulk
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SKA06N06 Infineon Technologies Description: IGBT WITH ANTI-PARALLEL DIODE
Produkt ist nicht verfügbar
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BTT60302EKBXUMA1 BTT6030-2EKB.pdf
BTT60302EKBXUMA1
Hersteller: Infineon Technologies
Description: IC PWR SWITCH N-CHAN 1:1 DSO-14
Qualification: AEC-Q100
Grade: Automotive
Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, Over Voltage
Supplier Device Package: PG-DSO-14-40-EP
Ratio - Input:Output: 1:1
Current - Output (Max): 4A
Voltage - Supply (Vcc/Vdd): Not Required
Voltage - Load: 5V ~ 36V
Input Type: Non-Inverting
Rds On (Typ): 32mOhm
Output Configuration: High Side
Operating Temperature: -40°C ~ 150°C (TJ)
Switch Type: General Purpose
Interface: On/Off
Number of Outputs: 2
Mounting Type: Surface Mount
Output Type: N-Channel
Package / Case: 14-SOIC (0.154", 3.90mm Width) Exposed Pad
Packaging: Cut Tape (CT)
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3+6.95 EUR
10+5.26 EUR
25+4.84 EUR
100+4.38 EUR
250+4.16 EUR
500+4.03 EUR
1000+3.92 EUR
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CY29774AXI
CY29774AXI
Hersteller: Infineon Technologies
Description: IC FANOUT DIST 52TQFP
Packaging: Bulk
Package / Case: 52-TQFP
Mounting Type: Surface Mount
Output: LVCMOS
Frequency - Max: 125MHz
Type: Fanout Distribution, Multiplexer, Zero Delay Buffer
Input: LVCMOS
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2.375V ~ 3.465V
Ratio - Input:Output: 2:14
Differential - Input:Output: No/No
Supplier Device Package: 52-TQFP (10x10)
PLL: Yes with Bypass
Divider/Multiplier: Yes/No
Number of Circuits: 1
DigiKey Programmable: Not Verified
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CY7C1297H-133AXC CY7C1297H.pdf
CY7C1297H-133AXC
Hersteller: Infineon Technologies
Description: IC SRAM 1MBIT PARALLEL 100TQFP
DigiKey Programmable: Not Verified
Memory Organization: 64K x 18
Memory Interface: Parallel
Supplier Device Package: 100-TQFP (14x20)
Memory Format: SRAM
Clock Frequency: 133 MHz
Technology: SRAM - Synchronous, SDR
Voltage - Supply: 3.135V ~ 3.6V
Operating Temperature: 0°C ~ 70°C (TA)
Memory Type: Volatile
Memory Size: 1Mbit
Mounting Type: Surface Mount
Package / Case: 100-LQFP
Packaging: Tray
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F4-50R12MS4 INFNS28281-1.pdf?t.download=true&u=5oefqw
Hersteller: Infineon Technologies
Description: IGBT, 70A, 1200V, N-CHANNEL
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Full Bridge Inverter
Operating Temperature: -40°C ~ 125°C (TJ)
Vce(on) (Max) @ Vge, Ic: 3.75V @ 15V, 50A
NTC Thermistor: Yes
Current - Collector (Ic) (Max): 70 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 355 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 3.4 nF @ 25 V
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FF450R12ME3BOSA1
FF450R12ME3BOSA1
Hersteller: Infineon Technologies
Description: IGBT MOD 1200V 600A 2100W MOD
Input Capacitance (Cies) @ Vce: 32 nF @ 25 V
Current - Collector Cutoff (Max): 5 mA
Power - Max: 2100 W
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 600 A
IGBT Type: Trench Field Stop
Supplier Device Package: Module
NTC Thermistor: Yes
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 450A
Operating Temperature: -40°C ~ 125°C
Configuration: Half Bridge
Input: Standard
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Bulk
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FF450R12ME4B11BPSA1 Infineon-FF450R12ME4_B11-DS-v02_00-en_de.pdf?fileId=db3a3043353fdc16013543e3dc143207
FF450R12ME4B11BPSA1
Hersteller: Infineon Technologies
Description: IGBT MOD 1200V 675A 2250W
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: 2 Independent
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 450A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Part Status: Discontinued at Digi-Key
Current - Collector (Ic) (Max): 675 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 2250 W
Current - Collector Cutoff (Max): 3 mA
Input Capacitance (Cies) @ Vce: 28 nF @ 25 V
Produkt ist nicht verfügbar
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F450R12KS4BOSA1 Infineon-F4_50R12KS4-DS-v02_00-en_de.pdf?fileId=db3a304412b407950112b43163e9542e
F450R12KS4BOSA1
Hersteller: Infineon Technologies
Description: IGBT MOD 1200V 70A 355W
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 125°C
Vce(on) (Max) @ Vge, Ic: 3.75V @ 15V, 50A
NTC Thermistor: Yes
Supplier Device Package: Module
Part Status: Discontinued at Digi-Key
Current - Collector (Ic) (Max): 70 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 355 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 3.4 nF @ 25 V
Produkt ist nicht verfügbar
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F450R12KS4B11BOSA1 Infineon-F4_50R12KS4_B11-DS-v02_00-en_de.pdf?fileId=db3a3043345a30bc01346aa2466e1366
F450R12KS4B11BOSA1
Hersteller: Infineon Technologies
Description: IGBT MOD 1200V 70A 355W MOD
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 125°C
Vce(on) (Max) @ Vge, Ic: 3.75V @ 15V, 50A
NTC Thermistor: Yes
Supplier Device Package: Module
Part Status: Discontinued at Digi-Key
Current - Collector (Ic) (Max): 70 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 355 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 3.4 nF @ 25 V
Produkt ist nicht verfügbar
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FF450R12KE4PHOSA1 Infineon-FF450R12KE4P-DS-v02_00-EN.pdf?fileId=5546d46253a864fe0153e679fa2d78c7
FF450R12KE4PHOSA1
Hersteller: Infineon Technologies
Description: IGBT MODULE 1200V 450A
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge Inverter
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 450A
NTC Thermistor: No
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 450 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 28 nF @ 25 V
Produkt ist nicht verfügbar
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FF450R12ME3BOSA1
FF450R12ME3BOSA1
Hersteller: Infineon Technologies
Description: IGBT MOD 1200V 600A 2100W MOD
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge
Operating Temperature: -40°C ~ 125°C
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 450A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 600 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 2100 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 32 nF @ 25 V
Produkt ist nicht verfügbar
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ICB1FL01G ICB1FL01G.pdf
ICB1FL01G
Hersteller: Infineon Technologies
Description: IC PFC/BALLAST CTR 100KHZ DSO-18
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245+1.98 EUR
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TLD5098EPXUMA1 Infineon-TLD5098EP-DataSheet-v01_00-EN.pdf?fileId=5546d4626c1f3dc3016c620b67681811
TLD5098EPXUMA1
Hersteller: Infineon Technologies
Description: IC LED DRV CTRL PWM 90MA 14TSDSO
Packaging: Tape & Reel (TR)
Package / Case: 14-TSSOP (0.154", 3.90mm Width) Exposed Pad
Voltage - Output: 4.5V ~ 5.5V
Mounting Type: Surface Mount
Number of Outputs: 1
Frequency: 100kHz ~ 500kHz
Type: DC DC Controller
Operating Temperature: -40°C ~ 150°C (TJ)
Current - Output / Channel: 90mA
Internal Switch(s): No
Topology: Flyback, SEPIC, Step-Down (Buck), Step-Up (Boost)
Supplier Device Package: PG-TSDSO-14
Dimming: Analog, PWM
Voltage - Supply (Min): 4.5V
Voltage - Supply (Max): 45V
Part Status: Active
Grade: Automotive
Qualification: AEC-Q100
auf Bestellung 3000 Stücke:
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AnzahlPreis
3000+1.34 EUR
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BTF3050EJDEMOBOARDTOBO1 Infineon-Demoboard_BTFxxxEJ-UserManual-v01_00-EN.pdf?fileId=5546d462712ef9b701712fc897870114
BTF3050EJDEMOBOARDTOBO1
Hersteller: Infineon Technologies
Description: BTF3050EJ DEMOBOARD
Packaging: Bulk
Function: Switch
Type: Power Management
Contents: Board(s)
Utilized IC / Part: BTF3050EJ
Platform: Arduino
Produkt ist nicht verfügbar
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BTF3125EJDEMOBOARDTOBO1 Infineon-Demoboard_BTFxxxEJ-UserManual-v01_00-EN.pdf?fileId=5546d462712ef9b701712fc897870114
BTF3125EJDEMOBOARDTOBO1
Hersteller: Infineon Technologies
Description: BTF3125J DEMOBOARD
Packaging: Bulk
Function: Switch
Type: Power Management
Contents: Board(s)
Utilized IC / Part: BTF3125EJ
Platform: Arduino
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BTF3035EJDEMOBOARDTOBO1 Infineon-Demoboard_BTFxxxEJ-UserManual-v01_00-EN.pdf?fileId=5546d462712ef9b701712fc897870114
BTF3035EJDEMOBOARDTOBO1
Hersteller: Infineon Technologies
Description: BTF3035EJ DEMOBOARD
Function: Switch
Packaging: Bulk
Part Status: Active
Platform: Arduino
Utilized IC / Part: BTF3035EJ
Contents: Board(s)
Type: Power Management
auf Bestellung 5 Stücke:
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1+77.32 EUR
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DF100R07W1H5FPB54BPSA2 Infineon-DF100R07W1H5FP_B54-DS-v03_00-EN.pdf?fileId=5546d4625b3ca4ec015b5761855903ab
DF100R07W1H5FPB54BPSA2
Hersteller: Infineon Technologies
Description: IGBT MODULE 650V 40A MODULE
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: 2 Independent
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.55V @ 15V, 25A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 40 µA
Input Capacitance (Cies) @ Vce: 2.8 nF @ 25 V
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1+66.26 EUR
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DF100R07W1H5FPB53BPSA2 Infineon-DF100R07W1H5FP_B53-DataSheet-v03_00-EN.pdf?fileId=5546d46259d9a4bf015a64b1b0c55aed
DF100R07W1H5FPB53BPSA2
Hersteller: Infineon Technologies
Description: IGBT MODULE 650V 40A MODULE
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: 2 Independent
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 1.55V @ 15V, 25A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 40 µA
Input Capacitance (Cies) @ Vce: 2.8 nF @ 25 V
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1+66.26 EUR
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BFG 19S E6327 BFG19S.pdf
BFG 19S E6327
Hersteller: Infineon Technologies
Description: RF TRANS NPN 15V 5.5GHZ SOT223-4
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 14dB ~ 8.5dB
Power - Max: 1W
Current - Collector (Ic) (Max): 210mA
Voltage - Collector Emitter Breakdown (Max): 15V
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 70mA, 8V
Frequency - Transition: 5.5GHz
Noise Figure (dB Typ @ f): 2dB ~ 3dB @ 900MHz ~ 1.8GHz
Supplier Device Package: PG-SOT223-4
Produkt ist nicht verfügbar
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ISC045N03L5SATMA1 Infineon-ISC045N03L5S-DataSheet-v02_00-EN.pdf?fileId=5546d46270c4f93e0170e8c2360e098e
ISC045N03L5SATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 30V 18A/63A TDSON
Input Capacitance (Ciss) (Max) @ Vds: 870 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PG-TDSON-8-6
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 2.5W (Ta), 30W (Tc)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 63A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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TLE4208G TLE4208G_2016.pdf?t.download=true&u=5oefqw
TLE4208G
Hersteller: Infineon Technologies
Description: BRUSH DC MOTOR CONTROLLER, 1A
Operating Temperature: -40°C ~ 150°C (TJ)
Interface: Parallel
Current - Output: 800mA
Function: Driver - Fully Integrated, Control and Power Stage
Mounting Type: Surface Mount
Package / Case: 28-SOIC (0.295", 7.50mm Width)
Packaging: Bulk
Part Status: Active
Motor Type - AC, DC: Brushed DC
Supplier Device Package: P-DSO-28
Voltage - Load: 5V ~ 18V
Technology: Bipolar
Applications: General Purpose
Voltage - Supply: 5V ~ 18V
Output Configuration: Half Bridge (4)
auf Bestellung 94404 Stücke:
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AnzahlPreis
135+3.71 EUR
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IGD01N120H2BUMA1 INFNS16255-1.pdf?t.download=true&u=5oefqw
IGD01N120H2BUMA1
Hersteller: Infineon Technologies
Description: POWER BIPOLAR TRANSISTOR, 3.2A I
Produkt ist nicht verfügbar
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BB914E6327HTSA1 INFNS15712-1.pdf?t.download=true&u=5oefqw
BB914E6327HTSA1
Hersteller: Infineon Technologies
Description: DIODE VARACTOR 18V DUAL SOT23-3
Packaging: Cut Tape (CT)
Capacitance Ratio: 2.42
Voltage - Peak Reverse (Max): 18 V
Part Status: Active
Supplier Device Package: PG-SOT23
Capacitance Ratio Condition: C2/C8
Capacitance @ Vr, F: 19.75pF @ 8V, 1MHz
Operating Temperature: -55°C ~ 125°C (TJ)
Diode Type: 1 Pair Common Cathode
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
auf Bestellung 313 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
18+1.02 EUR
29+0.63 EUR
100+0.4 EUR
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IPD082N10N3GATMA1 Infineon-IPP086N10N3G-DS-v02_06-en.pdf?fileId=db3a30431ce5fb52011d1ac5c8fa1358
IPD082N10N3GATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 100V 80A TO252-3
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Supplier Device Package: PG-TO252-3
Vgs(th) (Max) @ Id: 3.5V @ 75µA
Power Dissipation (Max): 125W (Tc)
Rds On (Max) @ Id, Vgs: 8.2mOhm @ 73A, 10V
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 3980 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
auf Bestellung 13807 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
5+3.8 EUR
10+2.45 EUR
100+1.68 EUR
500+1.34 EUR
1000+1.33 EUR
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IR4227PBF IRSDS09409-1.pdf?t.download=true&u=5oefqw
IR4227PBF
Hersteller: Infineon Technologies
Description: GATE DRIVER IC
Supplier Device Package: 8-PDIP
Input Type: Non-Inverting
Voltage - Supply: 6V ~ 20V
Operating Temperature: -40°C ~ 125°C (TJ)
Mounting Type: Through Hole
Package / Case: 8-DIP (0.300", 7.62mm)
Packaging: Bulk
Part Status: Active
Current - Peak Output (Source, Sink): 2.3A, 3.3A
Logic Voltage - VIL, VIH: 0.8V, 2.7V
Gate Type: IGBT, N-Channel MOSFET
Number of Drivers: 2
Driven Configuration: Low-Side
Channel Type: Independent
Rise / Fall Time (Typ): 15ns, 10ns
Produkt ist nicht verfügbar
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IPD80R2K7C3AATMA1 Infineon-IPD80R2K7C3A-DS-v01_01-EN.pdf?fileId=5546d4625e763904015ec2d9c72064a0
IPD80R2K7C3AATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH TO252-3
Power Dissipation (Max): 42W (Tc)
Rds On (Max) @ Id, Vgs: 2.7Ohm @ 1.2A, 10V
Current - Continuous Drain (Id) @ 25°C: 2A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 290 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 1.5 nC @ 10 V
Drain to Source Voltage (Vdss): 800 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-252AA (DPAK)
Vgs(th) (Max) @ Id: 3.9V @ 250µA
Produkt ist nicht verfügbar
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BSC889N03MSG INFNS15761-1.pdf?t.download=true&u=5oefqw
BSC889N03MSG
Hersteller: Infineon Technologies
Description: N-CHANNEL POWER MOSFET
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PG-TSDSON-8
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 2.5W (Ta), 28W (Tc)
Rds On (Max) @ Id, Vgs: 9.1mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 44A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Bulk
Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
auf Bestellung 15000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
1154+0.43 EUR
Mindestbestellmenge: 1154 Stücke
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BSC119N03MSCG INFNS13709-1.pdf?t.download=true&u=5oefqw
BSC119N03MSCG
Hersteller: Infineon Technologies
Description: N-CHANNEL POWER MOSFET
Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 39A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Bulk
Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PG-TDSON-8
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 2.5W (Ta), 28W (Tc)
Rds On (Max) @ Id, Vgs: 11.9mOhm @ 30A, 10V
auf Bestellung 160000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
1094+0.45 EUR
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BSC889N03LSG INFNS15760-1.pdf?t.download=true&u=5oefqw
BSC889N03LSG
Hersteller: Infineon Technologies
Description: N-CHANNEL POWER MOSFET
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PG-TDSON-8
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Power Dissipation (Max): 2.5W (Ta), 28W (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 45A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Bulk
auf Bestellung 329990 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
1126+0.48 EUR
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ISC019N03L5SATMA1 Infineon-ISC019N03L5S-DataSheet-v02_00-EN.pdf?fileId=5546d46270c4f93e0170e8a6c201097f
ISC019N03L5SATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 30V 28A/100A TDSON
Current - Continuous Drain (Id) @ 25°C: 28A (Ta), 100A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 2800 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PG-TDSON-8-5
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 2.5W (Ta), 69W (Tc)
Rds On (Max) @ Id, Vgs: 1.9mOhm @ 30A, 10V
auf Bestellung 15000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
5000+0.51 EUR
Mindestbestellmenge: 5000 Stücke
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ISC019N03L5SATMA1 Infineon-ISC019N03L5S-DataSheet-v02_00-EN.pdf?fileId=5546d46270c4f93e0170e8a6c201097f
ISC019N03L5SATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 30V 28A/100A TDSON
Input Capacitance (Ciss) (Max) @ Vds: 2800 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PG-TDSON-8-5
Rds On (Max) @ Id, Vgs: 1.9mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 28A (Ta), 100A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 2.5W (Ta), 69W (Tc)
auf Bestellung 18544 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
25+0.7 EUR
26+0.68 EUR
100+0.57 EUR
500+0.56 EUR
1000+0.55 EUR
2000+0.54 EUR
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ISZ019N03L5SATMA1 Infineon-ISZ019N03L5S-DataSheet-v02_00-EN.pdf?fileId=5546d46270c4f93e0170e8c249de0991
ISZ019N03L5SATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 30V 22A/40A TSDSON
Input Capacitance (Ciss) (Max) @ Vds: 2800 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PG-TSDSON-8-FL
Vgs(th) (Max) @ Id: 2V @ 250µA
Rds On (Max) @ Id, Vgs: 1.9mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 40A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
5000+0.81 EUR
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ISZ019N03L5SATMA1 Infineon-ISZ019N03L5S-DataSheet-v02_00-EN.pdf?fileId=5546d46270c4f93e0170e8c249de0991
ISZ019N03L5SATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 30V 22A/40A TSDSON
Input Capacitance (Ciss) (Max) @ Vds: 2800 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PG-TSDSON-8-FL
Vgs(th) (Max) @ Id: 2V @ 250µA
Rds On (Max) @ Id, Vgs: 1.9mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 40A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
auf Bestellung 9848 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
8+2.45 EUR
11+1.65 EUR
100+1.16 EUR
500+0.94 EUR
1000+0.87 EUR
2000+0.81 EUR
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BSC0302LSATMA1 Infineon-BSC0302LS-DataSheet-v02_00-EN.pdf?fileId=5546d462700c0ae601708b866a8713cd
BSC0302LSATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 120V 12A/99A TDSON
Part Status: Active
Supplier Device Package: PG-TDSON-8-7
Vgs(th) (Max) @ Id: 2.4V @ 112µA
Power Dissipation (Max): 156W (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 99A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 7400 pF @ 60 V
Gate Charge (Qg) (Max) @ Vgs: 79 nC @ 10 V
Drain to Source Voltage (Vdss): 120 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
auf Bestellung 7100 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
4+4.54 EUR
10+2.94 EUR
100+2.03 EUR
500+1.64 EUR
1000+1.51 EUR
2000+1.41 EUR
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IPD65R600C6BTMA1 Infineon-IPD65R600C6-DS-v02_01-en.pdf?folderId=5546d4694909da4801490a07012f053b&fileId=db3a30433f1b26e8013f2ceafdee37c4
IPD65R600C6BTMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 650V 7.3A TO252-3
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.3A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 2.1A, 10V
Power Dissipation (Max): 63W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 210µA
Supplier Device Package: PG-TO252-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 440 pF @ 100 V
auf Bestellung 12500 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
330+1.37 EUR
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IPP70N04S3-07 INFNS10667-1.pdf?t.download=true&u=5oefqw
IPP70N04S3-07
Hersteller: Infineon Technologies
Description: N-CHANNEL POWER MOSFET
Input Capacitance (Ciss) (Max) @ Vds: 2700 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PG-TO220-3-1
Vgs(th) (Max) @ Id: 4V @ 50µA
Power Dissipation (Max): 79W (Tc)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 70A, 10V
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Bulk
Produkt ist nicht verfügbar
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CY96F613RBPMC-GS-UJE2 Infineon-CY96610_SERIES_F2MC-16FX_16_BIT_PROPRIETARY_MICROCONTROLLER-AdditionalTechnicalInformation-v07_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0edae3195d8d&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all
CY96F613RBPMC-GS-UJE2
Hersteller: Infineon Technologies
Description: IC MCU 16BIT 96KB FLASH 48LQFP
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
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CY96F612RBPMC-GS-UJE1 Infineon-CY96610_SERIES_F2MC-16FX_16_BIT_PROPRIETARY_MICROCONTROLLER-AdditionalTechnicalInformation-v07_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0edae3195d8d&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all
CY96F612RBPMC-GS-UJE1
Hersteller: Infineon Technologies
Description: IC MCU 16BIT 64KB FLASH 48LQFP
Produkt ist nicht verfügbar
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CY96F613ABPMC-GS-UJE1 Infineon-CY96610_SERIES_F2MC-16FX_16_BIT_PROPRIETARY_MICROCONTROLLER-AdditionalTechnicalInformation-v07_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0edae3195d8d&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all
CY96F613ABPMC-GS-UJE1
Hersteller: Infineon Technologies
Description: IC MCU 16BIT 96KB FLASH 48LQFP
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
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CY96F613RBPMC-GS-UJE1 Infineon-CY96610_SERIES_F2MC-16FX_16_BIT_PROPRIETARY_MICROCONTROLLER-AdditionalTechnicalInformation-v07_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0edae3195d8d&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all
CY96F613RBPMC-GS-UJE1
Hersteller: Infineon Technologies
Description: IC MCU 16BIT 96KB FLASH 48LQFP
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
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CY96F615RBPMC-GS-UJE1 Infineon-CY96610_SERIES_F2MC-16FX_16_BIT_PROPRIETARY_MICROCONTROLLER-AdditionalTechnicalInformation-v07_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0edae3195d8d&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all
CY96F615RBPMC-GS-UJE1
Hersteller: Infineon Technologies
Description: IC MCU 16BIT 160KB FLASH 48LQFP
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
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MB96F625RBPMC1-GS119JAE2
Hersteller: Infineon Technologies
Description: IC AUTO MCU
DigiKey Programmable: Not Verified
Part Status: Obsolete
Packaging: Tray
Produkt ist nicht verfügbar
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MB96F625RBPMC1-GS120JAE2
Hersteller: Infineon Technologies
Description: IC AUTO MCU
DigiKey Programmable: Not Verified
Part Status: Obsolete
Packaging: Tray
Produkt ist nicht verfügbar
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IPD65R600E6 INFN-S-A0004583418-1.pdf?t.download=true&u=5oefqw
IPD65R600E6
Hersteller: Infineon Technologies
Description: COOLMOS N-CHANNEL POWER MOSFET
Input Capacitance (Ciss) (Max) @ Vds: 440 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PG-TO252-3-313
Vgs(th) (Max) @ Id: 3.5V @ 210µA
Power Dissipation (Max): 63W (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 2.1A, 10V
Current - Continuous Drain (Id) @ 25°C: 7.3A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Bulk
Produkt ist nicht verfügbar
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IPD65R600E6TR Infineon-IPD65R600E6-DS-v02_02-EN.pdf?fileId=db3a30433efacd9a013f0a0c175b3080
IPD65R600E6TR
Hersteller: Infineon Technologies
Description: N-CHANNEL POWER MOSFET
Input Capacitance (Ciss) (Max) @ Vds: 440 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: PG-TO252-3-313
Vgs(th) (Max) @ Id: 3.5V @ 210µA
Power Dissipation (Max): 63W (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 2.1A, 10V
Current - Continuous Drain (Id) @ 25°C: 7.3A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Bulk
Produkt ist nicht verfügbar
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IPD65R600E6BTMA1 Infineon-IPD65R600E6-DS-v02_01-en.pdf?folderId=5546d4694909da4801490a07012f053b&fileId=db3a30433efacd9a013f0a0c175b3080
IPD65R600E6BTMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 650V 7.3A TO252-3
Input Capacitance (Ciss) (Max) @ Vds: 440 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: PG-TO252-3
Vgs(th) (Max) @ Id: 3.5V @ 210µA
Power Dissipation (Max): 63W (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 2.1A, 10V
Current - Continuous Drain (Id) @ 25°C: 7.3A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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IPD65R600C6ATMA1 Infineon-IPD65R600C6-DS-v02_01-en.pdf?folderId=5546d4694909da4801490a07012f053b&fileId=db3a30433f1b26e8013f2ceafdee37c4
IPD65R600C6ATMA1
Hersteller: Infineon Technologies
Description: LOW POWER_LEGACY
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.3A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 2.1A, 10V
Power Dissipation (Max): 63W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 210µA
Supplier Device Package: PG-TO252-3-313
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 440 pF @ 100 V
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EVAL6EDL04I06PTTOBO1 Infineon-Evaluationboard_6EDL04I06PT-ApplicationNotes-v02_00-EN.pdf?fileId=db3a304340155f3d014029b1924102ff
EVAL6EDL04I06PTTOBO1
Hersteller: Infineon Technologies
Description: EVAL BOARD FOR 6EDL04I06P
Packaging: Bulk
Function: Gate Driver
Type: Power Management
Utilized IC / Part: 6EDL04I06P
Supplied Contents: Board(s)
Part Status: Active
Contents: Board(s)
auf Bestellung 3 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
1+253.19 EUR
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BC817K40WE6327 INFNS16504-1.pdf?t.download=true&u=5oefqw
BC817K40WE6327
Hersteller: Infineon Technologies
Description: BIPOLAR GEN PURPOSE TRANSISTOR
Power - Max: 500 mW
Voltage - Collector Emitter Breakdown (Max): 45 V
Current - Collector (Ic) (Max): 500 mA
Supplier Device Package: PG-SOT323-3-1
Frequency - Transition: 170MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 100mA, 1V
Current - Collector Cutoff (Max): 100nA (ICBO)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Packaging: Bulk
Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
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BC817K-40WE6327 INFNS16504-1.pdf?t.download=true&u=5oefqw
BC817K-40WE6327
Hersteller: Infineon Technologies
Description: BIPOLAR GEN PURPOSE TRANSISTOR
Power - Max: 500 mW
Current - Collector (Ic) (Max): 500 mA
Supplier Device Package: PG-SOT323-3-1
Frequency - Transition: 170MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 100mA, 1V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Packaging: Bulk
Voltage - Collector Emitter Breakdown (Max): 45 V
Produkt ist nicht verfügbar
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IPB052N04NG INFNS16285-1.pdf?t.download=true&u=5oefqw
IPB052N04NG
Hersteller: Infineon Technologies
Description: N-CHANNEL POWER MOSFET
Input Capacitance (Ciss) (Max) @ Vds: 3300 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: PG-TO-263-3-2
Vgs(th) (Max) @ Id: 4V @ 33µA
Power Dissipation (Max): 79W (Tc)
Rds On (Max) @ Id, Vgs: 5.2mOhm @ 70A, 10V
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Bulk
auf Bestellung 1989 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
693+0.7 EUR
Mindestbestellmenge: 693 Stücke
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BSZ028N04LSATMA1 Infineon-BSZ028N04LS-DS-v02_01-EN.pdf?fileId=db3a304342371bb001424bb10c8b6fff
BSZ028N04LSATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 40V 21A/40A TSDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs: 2.8mOhm @ 20A, 10V
Power Dissipation (Max): 2.1W (Ta), 63W (Tc)
Supplier Device Package: PG-TSDSON-8-FL
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2300 pF @ 20 V
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
5000+0.6 EUR
Mindestbestellmenge: 5000 Stücke
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TLD5085EJ 38725609546442328tld5085ej_ds_v11_december2009.pdffolderiddb3a3043163797a6011667aa.pdf?t.download=true&u=5oefqw
TLD5085EJ
Hersteller: Infineon Technologies
Description: SWITCHING REGULATOR, VOLT-MODE
Packaging: Bulk
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Voltage - Output: 0.6V ~ 16V
Mounting Type: Surface Mount
Number of Outputs: 1
Frequency: 370kHz
Type: DC DC Regulator
Operating Temperature: -40°C ~ 150°C (TJ)
Applications: Automotive, Backlight
Current - Output / Channel: 1.8A
Internal Switch(s): Yes
Topology: Step-Down (Buck)
Supplier Device Package: PG-DSO-8-27
Dimming: PWM
Voltage - Supply (Min): 4.75V
Voltage - Supply (Max): 45V
Part Status: Active
auf Bestellung 14226 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
136+3.56 EUR
Mindestbestellmenge: 136 Stücke
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IKB20N60H3ATMA1 IKB20N60H3_Rev1_1G.pdf?folderId=db3a3043156fd5730115f56849b61941&fileId=db3a30432a40a650012a476e38862bd0
IKB20N60H3ATMA1
Hersteller: Infineon Technologies
Description: IGBT TRENCH FS 600V 40A TO263-3
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 112 ns
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 20A
Supplier Device Package: PG-TO263-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 16ns/194ns
Switching Energy: 690µJ
Test Condition: 400V, 20A, 14.6Ohm, 15V
Gate Charge: 120 nC
Part Status: Active
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 80 A
Power - Max: 170 W
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
1000+1.79 EUR
Mindestbestellmenge: 1000 Stücke
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IKB20N60H3ATMA1 IKB20N60H3_Rev1_1G.pdf?folderId=db3a3043156fd5730115f56849b61941&fileId=db3a30432a40a650012a476e38862bd0
IKB20N60H3ATMA1
Hersteller: Infineon Technologies
Description: IGBT TRENCH FS 600V 40A TO263-3
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 112 ns
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 20A
Supplier Device Package: PG-TO263-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 16ns/194ns
Switching Energy: 690µJ
Test Condition: 400V, 20A, 14.6Ohm, 15V
Gate Charge: 120 nC
Part Status: Active
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 80 A
Power - Max: 170 W
auf Bestellung 1616 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
4+5.39 EUR
10+3.48 EUR
100+2.4 EUR
500+1.94 EUR
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IPI072N10N3 G INFNS16324-1.pdf?t.download=true&u=5oefqw
Hersteller: Infineon Technologies
Description: N-CHANNEL POWER MOSFET
Input Capacitance (Ciss) (Max) @ Vds: 4910 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Part Status: Active
Supplier Device Package: PG-TO262-3-1
Vgs(th) (Max) @ Id: 3.5V @ 90µA
Power Dissipation (Max): 150W (Tc)
Rds On (Max) @ Id, Vgs: 7.2mOhm @ 80A, 10V
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Packaging: Bulk
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
202+2.62 EUR
Mindestbestellmenge: 202 Stücke
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IPI072N10N3GXK
IPI072N10N3GXK
Hersteller: Infineon Technologies
Description: MOSFET N-CH 100V 80A TO262-3
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 4910 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Part Status: Obsolete
Supplier Device Package: PG-TO262-3
Vgs(th) (Max) @ Id: 3.5V @ 90µA
Power Dissipation (Max): 150W (Tc)
Rds On (Max) @ Id, Vgs: 7.2mOhm @ 80A, 10V
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Produkt ist nicht verfügbar
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IHY30N160R2XK
Hersteller: Infineon Technologies
Description: IGBT, N-CHANNEL
Packaging: Bulk
auf Bestellung 248 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
115+4.22 EUR
Mindestbestellmenge: 115 Stücke
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IRL520NSTRLPBF irl520nspbf.pdf?fileId=5546d462533600a40153565fa45e255d
IRL520NSTRLPBF
Hersteller: Infineon Technologies
Description: MOSFET N-CH 100V 10A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 180mOhm @ 6A, 10V
Power Dissipation (Max): 3.8W (Ta), 48W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: D2PAK
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 440 pF @ 25 V
Produkt ist nicht verfügbar
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IFS75S12N3T4_B11
Hersteller: Infineon Technologies
Description: TRANSISTOR IGBT MODULE
Packaging: Bulk
auf Bestellung 200 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
3+172.24 EUR
Mindestbestellmenge: 3 Stücke
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SKA06N06
Hersteller: Infineon Technologies
Description: IGBT WITH ANTI-PARALLEL DIODE
Produkt ist nicht verfügbar
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