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KTY21-5 KTY21-5 Infineon Technologies KT%2CKTY.pdf Description: THERMISTOR PTC 985 OHM 3% TO92
Packaging: Bulk
Package / Case: TO-226-2, TO-92-2 (TO-226AC)
Mounting Type: Through Hole
Operating Temperature: -50°C ~ 150°C
Resistance Tolerance: ±3%
Supplier Device Package: TO-92MINI
Resistance @ 25°C: 985 Ohms
auf Bestellung 84680 Stücke:
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CY7C1568KV18-550BZXC CY7C1568KV18-550BZXC Infineon Technologies CY7C1568%2C70KV18.pdf Description: IC SRAM 72MBIT PAR 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 72Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, DDR II+
Clock Frequency: 550 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (13x15)
Memory Interface: Parallel
Memory Organization: 4M x 18
DigiKey Programmable: Not Verified
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CY62157DV30LL-55BVXI CY62157DV30LL-55BVXI Infineon Technologies CY62157DV30.pdf Description: IC SRAM 8MBIT PARALLEL 48VFBGA
Packaging: Tray
Package / Case: 48-VFBGA
Mounting Type: Surface Mount
Memory Size: 8Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.2V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 48-VFBGA (6x8)
Write Cycle Time - Word, Page: 55ns
Memory Interface: Parallel
Access Time: 55 ns
Memory Organization: 512K x 16
DigiKey Programmable: Not Verified
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IR2118STRPBF IR2118STRPBF Infineon Technologies ir2117.pdf?fileId=5546d462533600a4015355c84331168d Description: IC GATE DRVR HIGH-SIDE 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 80ns, 40ns
Channel Type: Single
Driven Configuration: High-Side
Number of Drivers: 1
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 6V, 9.5V
Current - Peak Output (Source, Sink): 250mA, 500mA
Part Status: Active
DigiKey Programmable: Not Verified
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S29GL01GT12TFN010 S29GL01GT12TFN010 Infineon Technologies Infineon-S29GL01GT_S29GL512T_1-Gb_(128_MB)_512-Mb_(64_MB)_GL-T_MirrorBit_Eclipse_Flash-DataSheet-v13_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed2abb34fce&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_in Description: IC FLASH 1GBIT PARALLEL 56TSOP
Packaging: Tray
Package / Case: 56-TFSOP (0.724", 18.40mm Width)
Mounting Type: Surface Mount
Memory Size: 1Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 56-TSOP
Part Status: Active
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 120 ns
Memory Organization: 128M x 8
DigiKey Programmable: Not Verified
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TLE9180D31QKXUMA1 TLE9180D31QKXUMA1 Infineon Technologies Infineon-TLE9180D-31QK-DataSheet-v01_31-EN.pdf?fileId=8ac78c8c88ae21230189002d2f5c0f49 Description: IC GATE DRVR HALF-BRIDGE 64LQFP
Packaging: Tape & Reel (TR)
Package / Case: 64-LQFP Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 5.5V ~ 60V
Input Type: Non-Inverting
Supplier Device Package: PG-LQFP-64-27
Channel Type: 3-Phase
Driven Configuration: Half-Bridge
Number of Drivers: 6
Gate Type: MOSFET (N-Channel)
Current - Peak Output (Source, Sink): 1A, 1A
Part Status: Active
DigiKey Programmable: Not Verified
Grade: Automotive
Qualification: AEC-Q100
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TLE9180D31QKXUMA1 TLE9180D31QKXUMA1 Infineon Technologies Infineon-TLE9180D-31QK-DataSheet-v01_31-EN.pdf?fileId=8ac78c8c88ae21230189002d2f5c0f49 Description: IC GATE DRVR HALF-BRIDGE 64LQFP
Packaging: Cut Tape (CT)
Package / Case: 64-LQFP Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 5.5V ~ 60V
Input Type: Non-Inverting
Supplier Device Package: PG-LQFP-64-27
Channel Type: 3-Phase
Driven Configuration: Half-Bridge
Number of Drivers: 6
Gate Type: MOSFET (N-Channel)
Current - Peak Output (Source, Sink): 1A, 1A
Part Status: Active
DigiKey Programmable: Not Verified
Grade: Automotive
Qualification: AEC-Q100
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250+5.98 EUR
500+5.81 EUR
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BSF134N10NJ3 G Infineon Technologies INFNS28779-1.pdf?t.download=true&u=5oefqw Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: DirectFET™ Isometric MX
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs: 13.4mOhm @ 30A, 10V
Power Dissipation (Max): 2.2W (Ta), 43W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 40µA
Supplier Device Package: MG-WDSON-2-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2300 pF @ 50 V
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STT800N18P55XPSA1 STT800N18P55XPSA1 Infineon Technologies Infineon-STT800N18P55-DataSheet-v03_01-EN.pdf?fileId=5546d46272aa54c00172bc9961ca5665 Description: THYR / DIODE MODULE DK
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: 125°C (TJ)
Structure: 1-Phase Controller - All SCRs
Current - Hold (Ih) (Max): 300 mA
Current - Gate Trigger (Igt) (Max): 200 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 6300A @ 60Hz
Number of SCRs, Diodes: 2 SCRs
Voltage - Gate Trigger (Vgt) (Max): 2 V
Voltage - Off State: 1.8 kV
Produkt ist nicht verfügbar
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IMC301AF064XUMA1 IMC301AF064XUMA1 Infineon Technologies IMC301A_IMC302A_Rev1.0_12-12-19.pdf Description: IC MCU 32BIT 128KB FLASH 64LQFP
Packaging: Tape & Reel (TR)
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 128KB (128K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: A/D 7x12b, D/A 7x1b Sigma-Delta
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Connectivity: CANbus, I²C, LINbus, SPI, UART/USART, USI
Peripherals: Brown-out Detect/Reset, I²S, LED, POR, PWM, WDT
Supplier Device Package: 64-QFP (10x10)
Part Status: Active
Number of I/O: 41
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IMC302AF064XUMA1 IMC302AF064XUMA1 Infineon Technologies IMC301A_IMC302A_Rev1.0_12-12-19.pdf Description: IC MCU 32BIT 128KB FLASH 64LQFP
Packaging: Tape & Reel (TR)
Package / Case: 64-LQFP
Mounting Type: Surface Mount
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Supplier Device Package: 64-QFP (10x10)
Number of I/O: 41
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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PEB4265V V1.1 Infineon Technologies INTL-S-A0006019977-1.pdf?t.download=true&u=5oefqw Description: DUSLIC DUAL CHANNEL SLIC
Packaging: Bulk
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PEB4265VV1.1 Infineon Technologies INTL-S-A0006019977-1.pdf?t.download=true&u=5oefqw Description: DUSLIC DUAL CHANNEL SLIC
Packaging: Bulk
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PEB4265VV1.2 Infineon Technologies INTL-S-A0006019977-1.pdf?t.download=true&u=5oefqw Description: DUSLIC DUAL CHANNEL SUBSCRIBER L
Packaging: Bulk
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XMC1402T038X0128AAXUMA1 XMC1402T038X0128AAXUMA1 Infineon Technologies Infineon-XMC1400-DS-v01_03-EN.pdf?fileId=5546d46250cc1fdf015110a2596343b2 Description: IC MCU 32BIT 128KB FLASH 38TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 38-TFSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 128KB (128K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: A/D 12x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V
Connectivity: I2C, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, DMA, I2S, POR, PWM, WDT
Supplier Device Package: PG-TSSOP-38-9
Part Status: Active
Number of I/O: 26
DigiKey Programmable: Not Verified
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XMC1402T038X0128AAXUMA1 XMC1402T038X0128AAXUMA1 Infineon Technologies Infineon-XMC1400-DS-v01_03-EN.pdf?fileId=5546d46250cc1fdf015110a2596343b2 Description: IC MCU 32BIT 128KB FLASH 38TSSOP
Packaging: Cut Tape (CT)
Package / Case: 38-TFSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 128KB (128K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: A/D 12x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V
Connectivity: I2C, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, DMA, I2S, POR, PWM, WDT
Supplier Device Package: PG-TSSOP-38-9
Part Status: Active
Number of I/O: 26
DigiKey Programmable: Not Verified
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10+3.76 EUR
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100+3.09 EUR
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BSL214NL6327 BSL214NL6327 Infineon Technologies INFNS16734-1.pdf?t.download=true&u=5oefqw Description: SMALL SIGNAL N-CHANNEL MOSFET
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BSL215PL6327 BSL215PL6327 Infineon Technologies INFNS16735-1.pdf?t.download=true&u=5oefqw Description: P-CHANNEL MOSFET
Packaging: Bulk
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 500mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 1.5A
Input Capacitance (Ciss) (Max) @ Vds: 346pF @ 15V
Rds On (Max) @ Id, Vgs: 150mOhm @ 1.5A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 3.55nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.2V @ 11µA
Supplier Device Package: PG-TSOP6-6
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BSL205NL6327 BSL205NL6327 Infineon Technologies INFNS16732-1.pdf?t.download=true&u=5oefqw Description: SMALL SIGNAL N-CHANNEL MOSFET
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BSL207NL6327 BSL207NL6327 Infineon Technologies INFNS16733-1.pdf?t.download=true&u=5oefqw Description: MOSFET 2N-CH 20V 2.1A TSOP6-6
Packaging: Bulk
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 500mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 2.1A
Input Capacitance (Ciss) (Max) @ Vds: 419pF @ 10V
Rds On (Max) @ Id, Vgs: 70mOhm @ 2.1A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 2.1nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.2V @ 11µA
Supplier Device Package: PG-TSOP6-6
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BSL202SNL6327 BSL202SNL6327 Infineon Technologies INFNS16731-1.pdf?t.download=true&u=5oefqw Description: SMALL SIGNAL N-CHANNEL MOSFET
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D3041N68TXPSA1 Infineon Technologies Infineon-D3041N-DS-v04_02-EN.pdf?fileId=db3a304412b407950112b42f9c084c6b Description: DIODE GEN PURP 6.8KV 4090A
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D3041N58TXPSA1 Infineon Technologies D3041N.pdf Description: DIODE GEN PURP 5.8KV 4090A
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EVALM12ED2106STOBO1 EVALM12ED2106STOBO1 Infineon Technologies Infineon-EVAL-M1-2ED2106S-UserManual-v01_00-EN.pdf?fileId=5546d4626df6ee62016e17c7e89f3ab5 Description: EVAL BOARD FOR M12ED2106S
Packaging: Bulk
Function: Motor Controller/Driver, Stepper
Type: Power Management
Utilized IC / Part: M12ED2106S
Supplied Contents: Board(s)
Part Status: Active
Contents: Board(s)
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TLD1310ELXUMA1 TLD1310ELXUMA1 Infineon Technologies Infineon-TLD1310EL-DS-v01_01-EN.pdf?fileId=5546d46258fc0bc101596e255d303500 Description: IC LED DRVR LINEAR 120MA 14SSOP
Packaging: Tape & Reel (TR)
Package / Case: 14-LSSOP (0.154", 3.90mm Width) Exposed Pad
Voltage - Output: 40V
Mounting Type: Surface Mount
Number of Outputs: 3
Type: Linear
Operating Temperature: -40°C ~ 150°C (TJ)
Current - Output / Channel: 120mA
Internal Switch(s): Yes
Supplier Device Package: PG-SSOP-14-5
Voltage - Supply (Min): 5.5V
Voltage - Supply (Max): 40V
Part Status: Active
Grade: Automotive
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TLD1310ELXUMA1 TLD1310ELXUMA1 Infineon Technologies Infineon-TLD1310EL-DS-v01_01-EN.pdf?fileId=5546d46258fc0bc101596e255d303500 Description: IC LED DRVR LINEAR 120MA 14SSOP
Packaging: Cut Tape (CT)
Package / Case: 14-LSSOP (0.154", 3.90mm Width) Exposed Pad
Voltage - Output: 40V
Mounting Type: Surface Mount
Number of Outputs: 3
Type: Linear
Operating Temperature: -40°C ~ 150°C (TJ)
Current - Output / Channel: 120mA
Internal Switch(s): Yes
Supplier Device Package: PG-SSOP-14-5
Voltage - Supply (Min): 5.5V
Voltage - Supply (Max): 40V
Part Status: Active
Grade: Automotive
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BTT60302ERBXUMA1 BTT60302ERBXUMA1 Infineon Technologies Infineon-BTT6030-2ERB-DS-v01_00-EN.pdf?fileId=5546d46269e1c019016a21fa51430d86 Description: IC PWR SWITCH N-CHAN 1:1 TDSO-14
Packaging: Cut Tape (CT)
Package / Case: 14-SOIC (0.154", 3.90mm Width) Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 2
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 32mOhm
Input Type: Non-Inverting
Voltage - Load: 5V ~ 36V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 4A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-TDSO-14-31
Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, Over Voltage
Part Status: Active
Grade: Automotive
Qualification: AEC-Q100
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BTT6030-2EKBXUMA1 Infineon Technologies Description: DUAL HIGH-SIDE POWER SWITCH
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BTT60302EKBXUMA1 BTT60302EKBXUMA1 Infineon Technologies BTT6030-2EKB.pdf Description: IC PWR SWITCH N-CHAN 1:1 DSO-14
Packaging: Cut Tape (CT)
Package / Case: 14-SOIC (0.154", 3.90mm Width) Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 2
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 32mOhm
Input Type: Non-Inverting
Voltage - Load: 5V ~ 36V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 4A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-DSO-14-40-EP
Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, Over Voltage
Grade: Automotive
Qualification: AEC-Q100
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CY29774AXI CY29774AXI Infineon Technologies Description: IC FANOUT DIST 52TQFP
Packaging: Bulk
Package / Case: 52-TQFP
Mounting Type: Surface Mount
Output: LVCMOS
Frequency - Max: 125MHz
Type: Fanout Distribution, Multiplexer, Zero Delay Buffer
Input: LVCMOS
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2.375V ~ 3.465V
Ratio - Input:Output: 2:14
Differential - Input:Output: No/No
Supplier Device Package: 52-TQFP (10x10)
PLL: Yes with Bypass
Divider/Multiplier: Yes/No
Number of Circuits: 1
DigiKey Programmable: Not Verified
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42+12.15 EUR
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CY7C1297H-133AXC CY7C1297H-133AXC Infineon Technologies CY7C1297H.pdf Description: IC SRAM 1MBIT PARALLEL 100TQFP
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Memory Size: 1Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 3.135V ~ 3.6V
Technology: SRAM - Synchronous, SDR
Clock Frequency: 133 MHz
Memory Format: SRAM
Supplier Device Package: 100-TQFP (14x20)
Memory Interface: Parallel
Memory Organization: 64K x 18
DigiKey Programmable: Not Verified
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F4-50R12MS4 Infineon Technologies INFNS28281-1.pdf?t.download=true&u=5oefqw Description: IGBT, 70A, 1200V, N-CHANNEL
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Full Bridge Inverter
Operating Temperature: -40°C ~ 125°C (TJ)
Vce(on) (Max) @ Vge, Ic: 3.75V @ 15V, 50A
NTC Thermistor: Yes
Current - Collector (Ic) (Max): 70 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 355 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 3.4 nF @ 25 V
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6+80.71 EUR
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FF450R12ME3BOSA1 FF450R12ME3BOSA1 Infineon Technologies Description: IGBT MOD 1200V 600A 2100W MOD
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge
Operating Temperature: -40°C ~ 125°C
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 450A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 600 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 2100 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 32 nF @ 25 V
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FF450R12ME4B11BPSA1 FF450R12ME4B11BPSA1 Infineon Technologies Infineon-FF450R12ME4_B11-DS-v02_00-en_de.pdf?fileId=db3a3043353fdc16013543e3dc143207 Description: IGBT MOD 1200V 675A 2250W
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: 2 Independent
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 450A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Part Status: Discontinued at Digi-Key
Current - Collector (Ic) (Max): 675 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 2250 W
Current - Collector Cutoff (Max): 3 mA
Input Capacitance (Cies) @ Vce: 28 nF @ 25 V
Produkt ist nicht verfügbar
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F450R12KS4BOSA1 F450R12KS4BOSA1 Infineon Technologies Infineon-F4_50R12KS4-DS-v02_00-en_de.pdf?fileId=db3a304412b407950112b43163e9542e Description: IGBT MOD 1200V 70A 355W
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 125°C
Vce(on) (Max) @ Vge, Ic: 3.75V @ 15V, 50A
NTC Thermistor: Yes
Supplier Device Package: Module
Part Status: Discontinued at Digi-Key
Current - Collector (Ic) (Max): 70 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 355 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 3.4 nF @ 25 V
Produkt ist nicht verfügbar
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F450R12KS4B11BOSA1 F450R12KS4B11BOSA1 Infineon Technologies Infineon-F4_50R12KS4_B11-DS-v02_00-en_de.pdf?fileId=db3a3043345a30bc01346aa2466e1366 Description: IGBT MOD 1200V 70A 355W MOD
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 125°C
Vce(on) (Max) @ Vge, Ic: 3.75V @ 15V, 50A
NTC Thermistor: Yes
Supplier Device Package: Module
Part Status: Discontinued at Digi-Key
Current - Collector (Ic) (Max): 70 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 355 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 3.4 nF @ 25 V
Produkt ist nicht verfügbar
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FF450R12KE4PHOSA1 FF450R12KE4PHOSA1 Infineon Technologies Infineon-FF450R12KE4P-DS-v02_00-EN.pdf?fileId=5546d46253a864fe0153e679fa2d78c7 Description: IGBT MODULE 1200V 450A
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge Inverter
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 450A
NTC Thermistor: No
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 450 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 28 nF @ 25 V
Produkt ist nicht verfügbar
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FF450R12ME3BOSA1 FF450R12ME3BOSA1 Infineon Technologies Description: IGBT MOD 1200V 600A 2100W MOD
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge
Operating Temperature: -40°C ~ 125°C
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 450A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 600 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 2100 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 32 nF @ 25 V
Produkt ist nicht verfügbar
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ICB1FL01G ICB1FL01G Infineon Technologies ICB1FL01G.pdf Description: IC PFC/BALLAST CTR 100KHZ DSO-18
auf Bestellung 29880 Stücke:
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Mindestbestellmenge: 245
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TLD5098EPXUMA1 TLD5098EPXUMA1 Infineon Technologies Infineon-TLD5098EP-DataSheet-v01_00-EN.pdf?fileId=5546d4626c1f3dc3016c620b67681811 Description: IC LED DRV CTRL PWM 90MA 14TSDSO
Packaging: Tape & Reel (TR)
Package / Case: 14-TSSOP (0.154", 3.90mm Width) Exposed Pad
Voltage - Output: 4.5V ~ 5.5V
Mounting Type: Surface Mount
Number of Outputs: 1
Frequency: 100kHz ~ 500kHz
Type: DC DC Controller
Operating Temperature: -40°C ~ 150°C (TJ)
Current - Output / Channel: 90mA
Internal Switch(s): No
Topology: Flyback, SEPIC, Step-Down (Buck), Step-Up (Boost)
Supplier Device Package: PG-TSDSO-14
Dimming: Analog, PWM
Voltage - Supply (Min): 4.5V
Voltage - Supply (Max): 45V
Part Status: Active
Grade: Automotive
Qualification: AEC-Q100
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BTF3050EJDEMOBOARDTOBO1 BTF3050EJDEMOBOARDTOBO1 Infineon Technologies Infineon-Demoboard_BTFxxxEJ-UserManual-v01_00-EN.pdf?fileId=5546d462712ef9b701712fc897870114 Description: BTF3050EJ DEMOBOARD
Packaging: Bulk
Function: Switch
Type: Power Management
Contents: Board(s)
Utilized IC / Part: BTF3050EJ
Platform: Arduino
Produkt ist nicht verfügbar
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BTF3125EJDEMOBOARDTOBO1 BTF3125EJDEMOBOARDTOBO1 Infineon Technologies Infineon-Demoboard_BTFxxxEJ-UserManual-v01_00-EN.pdf?fileId=5546d462712ef9b701712fc897870114 Description: BTF3125J DEMOBOARD
Packaging: Bulk
Function: Switch
Type: Power Management
Contents: Board(s)
Utilized IC / Part: BTF3125EJ
Platform: Arduino
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BTF3035EJDEMOBOARDTOBO1 BTF3035EJDEMOBOARDTOBO1 Infineon Technologies Infineon-Demoboard_BTFxxxEJ-UserManual-v01_00-EN.pdf?fileId=5546d462712ef9b701712fc897870114 Description: BTF3035EJ DEMOBOARD
Packaging: Bulk
Function: Switch
Type: Power Management
Contents: Board(s)
Utilized IC / Part: BTF3035EJ
Platform: Arduino
Part Status: Active
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DF100R07W1H5FPB54BPSA2 DF100R07W1H5FPB54BPSA2 Infineon Technologies Infineon-DF100R07W1H5FP_B54-DS-v03_00-EN.pdf?fileId=5546d4625b3ca4ec015b5761855903ab Description: IGBT MODULE 650V 40A MODULE
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: 2 Independent
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.55V @ 15V, 25A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 40 µA
Input Capacitance (Cies) @ Vce: 2.8 nF @ 25 V
auf Bestellung 1 Stücke:
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DF100R07W1H5FPB53BPSA2 DF100R07W1H5FPB53BPSA2 Infineon Technologies Infineon-DF100R07W1H5FP_B53-DataSheet-v03_00-EN.pdf?fileId=5546d46259d9a4bf015a64b1b0c55aed Description: IGBT MODULE 650V 40A MODULE
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: 2 Independent
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 1.55V @ 15V, 25A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 40 µA
Input Capacitance (Cies) @ Vce: 2.8 nF @ 25 V
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BFG 19S E6327 BFG 19S E6327 Infineon Technologies BFG19S.pdf Description: RF TRANS NPN 15V 5.5GHZ SOT223-4
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 14dB ~ 8.5dB
Power - Max: 1W
Current - Collector (Ic) (Max): 210mA
Voltage - Collector Emitter Breakdown (Max): 15V
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 70mA, 8V
Frequency - Transition: 5.5GHz
Noise Figure (dB Typ @ f): 2dB ~ 3dB @ 900MHz ~ 1.8GHz
Supplier Device Package: PG-SOT223-4
Produkt ist nicht verfügbar
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ISC045N03L5SATMA1 ISC045N03L5SATMA1 Infineon Technologies Infineon-ISC045N03L5S-DataSheet-v02_00-EN.pdf?fileId=5546d46270c4f93e0170e8c2360e098e Description: MOSFET N-CH 30V 18A/63A TDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 63A (Tc)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 30A, 10V
Power Dissipation (Max): 2.5W (Ta), 30W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TDSON-8-6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 870 pF @ 15 V
Produkt ist nicht verfügbar
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TLE4208G TLE4208G Infineon Technologies TLE4208G_2016.pdf?t.download=true&u=5oefqw Description: BRUSH DC MOTOR CONTROLLER, 1A
Packaging: Bulk
Package / Case: 28-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 800mA
Interface: Parallel
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge (4)
Voltage - Supply: 5V ~ 18V
Applications: General Purpose
Technology: Bipolar
Voltage - Load: 5V ~ 18V
Supplier Device Package: P-DSO-28
Motor Type - AC, DC: Brushed DC
Part Status: Active
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135+3.71 EUR
Mindestbestellmenge: 135
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IGD01N120H2BUMA1 IGD01N120H2BUMA1 Infineon Technologies INFNS16255-1.pdf?t.download=true&u=5oefqw Description: POWER BIPOLAR TRANSISTOR, 3.2A I
Produkt ist nicht verfügbar
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BB914E6327HTSA1 BB914E6327HTSA1 Infineon Technologies INFNS15712-1.pdf?t.download=true&u=5oefqw Description: DIODE VARACTOR 18V DUAL SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Diode Type: 1 Pair Common Cathode
Operating Temperature: -55°C ~ 125°C (TJ)
Capacitance @ Vr, F: 19.75pF @ 8V, 1MHz
Capacitance Ratio Condition: C2/C8
Supplier Device Package: PG-SOT23
Part Status: Active
Voltage - Peak Reverse (Max): 18 V
Capacitance Ratio: 2.42
auf Bestellung 313 Stücke:
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18+1.02 EUR
29+0.63 EUR
100+0.4 EUR
Mindestbestellmenge: 18
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IPD082N10N3GATMA1 IPD082N10N3GATMA1 Infineon Technologies Infineon-IPP086N10N3G-DS-v02_06-en.pdf?fileId=db3a30431ce5fb52011d1ac5c8fa1358 Description: MOSFET N-CH 100V 80A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 8.2mOhm @ 73A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 75µA
Supplier Device Package: PG-TO252-3
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3980 pF @ 50 V
auf Bestellung 13807 Stücke:
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5+3.8 EUR
10+2.45 EUR
100+1.68 EUR
500+1.34 EUR
1000+1.33 EUR
Mindestbestellmenge: 5
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IR4227PBF IR4227PBF Infineon Technologies IRSDS09409-1.pdf?t.download=true&u=5oefqw Description: GATE DRIVER IC
Packaging: Bulk
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 6V ~ 20V
Input Type: Non-Inverting
Supplier Device Package: 8-PDIP
Rise / Fall Time (Typ): 15ns, 10ns
Channel Type: Independent
Driven Configuration: Low-Side
Number of Drivers: 2
Gate Type: IGBT, N-Channel MOSFET
Logic Voltage - VIL, VIH: 0.8V, 2.7V
Current - Peak Output (Source, Sink): 2.3A, 3.3A
Part Status: Active
Produkt ist nicht verfügbar
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IPD80R2K7C3AATMA1 IPD80R2K7C3AATMA1 Infineon Technologies Infineon-IPD80R2K7C3A-DS-v01_01-EN.pdf?fileId=5546d4625e763904015ec2d9c72064a0 Description: MOSFET N-CH TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Tc)
Rds On (Max) @ Id, Vgs: 2.7Ohm @ 1.2A, 10V
Power Dissipation (Max): 42W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 1.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 290 pF @ 100 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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BSC889N03MSG BSC889N03MSG Infineon Technologies INFNS15761-1.pdf?t.download=true&u=5oefqw Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 44A (Tc)
Rds On (Max) @ Id, Vgs: 9.1mOhm @ 30A, 10V
Power Dissipation (Max): 2.5W (Ta), 28W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TSDSON-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 15 V
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1154+0.43 EUR
Mindestbestellmenge: 1154
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BSC119N03MSCG BSC119N03MSCG Infineon Technologies INFNS13709-1.pdf?t.download=true&u=5oefqw Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 39A (Tc)
Rds On (Max) @ Id, Vgs: 11.9mOhm @ 30A, 10V
Power Dissipation (Max): 2.5W (Ta), 28W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TDSON-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 15 V
auf Bestellung 160000 Stücke:
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1094+0.45 EUR
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BSC889N03LSG BSC889N03LSG Infineon Technologies INFNS15760-1.pdf?t.download=true&u=5oefqw Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 45A (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 30A, 10V
Power Dissipation (Max): 2.5W (Ta), 28W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: PG-TDSON-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 15 V
auf Bestellung 329990 Stücke:
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1126+0.48 EUR
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ISC019N03L5SATMA1 ISC019N03L5SATMA1 Infineon Technologies Infineon-ISC019N03L5S-DataSheet-v02_00-EN.pdf?fileId=5546d46270c4f93e0170e8a6c201097f Description: MOSFET N-CH 30V 28A/100A TDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 1.9mOhm @ 30A, 10V
Power Dissipation (Max): 2.5W (Ta), 69W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TDSON-8-5
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2800 pF @ 15 V
auf Bestellung 15000 Stücke:
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5000+0.51 EUR
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ISC019N03L5SATMA1 ISC019N03L5SATMA1 Infineon Technologies Infineon-ISC019N03L5S-DataSheet-v02_00-EN.pdf?fileId=5546d46270c4f93e0170e8a6c201097f Description: MOSFET N-CH 30V 28A/100A TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 1.9mOhm @ 30A, 10V
Power Dissipation (Max): 2.5W (Ta), 69W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TDSON-8-5
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2800 pF @ 15 V
auf Bestellung 18544 Stücke:
Lieferzeit 10-14 Tag (e)
25+0.7 EUR
26+0.68 EUR
100+0.57 EUR
500+0.56 EUR
1000+0.55 EUR
2000+0.54 EUR
Mindestbestellmenge: 25
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ISZ019N03L5SATMA1 ISZ019N03L5SATMA1 Infineon Technologies Infineon-ISZ019N03L5S-DataSheet-v02_00-EN.pdf?fileId=5546d46270c4f93e0170e8c249de0991 Description: MOSFET N-CH 30V 22A/40A TSDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs: 1.9mOhm @ 20A, 10V
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TSDSON-8-FL
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2800 pF @ 15 V
auf Bestellung 5000 Stücke:
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5000+0.81 EUR
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ISZ019N03L5SATMA1 ISZ019N03L5SATMA1 Infineon Technologies Infineon-ISZ019N03L5S-DataSheet-v02_00-EN.pdf?fileId=5546d46270c4f93e0170e8c249de0991 Description: MOSFET N-CH 30V 22A/40A TSDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs: 1.9mOhm @ 20A, 10V
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TSDSON-8-FL
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2800 pF @ 15 V
auf Bestellung 9848 Stücke:
Lieferzeit 10-14 Tag (e)
8+2.45 EUR
11+1.65 EUR
100+1.16 EUR
500+0.94 EUR
1000+0.87 EUR
2000+0.81 EUR
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KTY21-5 KT%2CKTY.pdf
KTY21-5
Hersteller: Infineon Technologies
Description: THERMISTOR PTC 985 OHM 3% TO92
Packaging: Bulk
Package / Case: TO-226-2, TO-92-2 (TO-226AC)
Mounting Type: Through Hole
Operating Temperature: -50°C ~ 150°C
Resistance Tolerance: ±3%
Supplier Device Package: TO-92MINI
Resistance @ 25°C: 985 Ohms
auf Bestellung 84680 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
611+0.79 EUR
Mindestbestellmenge: 611
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CY7C1568KV18-550BZXC CY7C1568%2C70KV18.pdf
CY7C1568KV18-550BZXC
Hersteller: Infineon Technologies
Description: IC SRAM 72MBIT PAR 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 72Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, DDR II+
Clock Frequency: 550 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (13x15)
Memory Interface: Parallel
Memory Organization: 4M x 18
DigiKey Programmable: Not Verified
auf Bestellung 219 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+579.87 EUR
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CY62157DV30LL-55BVXI CY62157DV30.pdf
CY62157DV30LL-55BVXI
Hersteller: Infineon Technologies
Description: IC SRAM 8MBIT PARALLEL 48VFBGA
Packaging: Tray
Package / Case: 48-VFBGA
Mounting Type: Surface Mount
Memory Size: 8Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.2V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 48-VFBGA (6x8)
Write Cycle Time - Word, Page: 55ns
Memory Interface: Parallel
Access Time: 55 ns
Memory Organization: 512K x 16
DigiKey Programmable: Not Verified
auf Bestellung 719 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
43+11.55 EUR
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IR2118STRPBF ir2117.pdf?fileId=5546d462533600a4015355c84331168d
IR2118STRPBF
Hersteller: Infineon Technologies
Description: IC GATE DRVR HIGH-SIDE 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 80ns, 40ns
Channel Type: Single
Driven Configuration: High-Side
Number of Drivers: 1
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 6V, 9.5V
Current - Peak Output (Source, Sink): 250mA, 500mA
Part Status: Active
DigiKey Programmable: Not Verified
auf Bestellung 654 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
6+3.01 EUR
10+2.22 EUR
25+2.03 EUR
100+1.81 EUR
250+1.7 EUR
500+1.64 EUR
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S29GL01GT12TFN010 Infineon-S29GL01GT_S29GL512T_1-Gb_(128_MB)_512-Mb_(64_MB)_GL-T_MirrorBit_Eclipse_Flash-DataSheet-v13_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed2abb34fce&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_in
S29GL01GT12TFN010
Hersteller: Infineon Technologies
Description: IC FLASH 1GBIT PARALLEL 56TSOP
Packaging: Tray
Package / Case: 56-TFSOP (0.724", 18.40mm Width)
Mounting Type: Surface Mount
Memory Size: 1Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 56-TSOP
Part Status: Active
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 120 ns
Memory Organization: 128M x 8
DigiKey Programmable: Not Verified
auf Bestellung 14 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+28.97 EUR
10+26.83 EUR
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TLE9180D31QKXUMA1 Infineon-TLE9180D-31QK-DataSheet-v01_31-EN.pdf?fileId=8ac78c8c88ae21230189002d2f5c0f49
TLE9180D31QKXUMA1
Hersteller: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 64LQFP
Packaging: Tape & Reel (TR)
Package / Case: 64-LQFP Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 5.5V ~ 60V
Input Type: Non-Inverting
Supplier Device Package: PG-LQFP-64-27
Channel Type: 3-Phase
Driven Configuration: Half-Bridge
Number of Drivers: 6
Gate Type: MOSFET (N-Channel)
Current - Peak Output (Source, Sink): 1A, 1A
Part Status: Active
DigiKey Programmable: Not Verified
Grade: Automotive
Qualification: AEC-Q100
auf Bestellung 5700 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1900+5.1 EUR
Mindestbestellmenge: 1900
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TLE9180D31QKXUMA1 Infineon-TLE9180D-31QK-DataSheet-v01_31-EN.pdf?fileId=8ac78c8c88ae21230189002d2f5c0f49
TLE9180D31QKXUMA1
Hersteller: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 64LQFP
Packaging: Cut Tape (CT)
Package / Case: 64-LQFP Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 5.5V ~ 60V
Input Type: Non-Inverting
Supplier Device Package: PG-LQFP-64-27
Channel Type: 3-Phase
Driven Configuration: Half-Bridge
Number of Drivers: 6
Gate Type: MOSFET (N-Channel)
Current - Peak Output (Source, Sink): 1A, 1A
Part Status: Active
DigiKey Programmable: Not Verified
Grade: Automotive
Qualification: AEC-Q100
auf Bestellung 7008 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+9.72 EUR
10+7.46 EUR
25+6.89 EUR
100+6.28 EUR
250+5.98 EUR
500+5.81 EUR
Mindestbestellmenge: 2
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BSF134N10NJ3 G INFNS28779-1.pdf?t.download=true&u=5oefqw
Hersteller: Infineon Technologies
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: DirectFET™ Isometric MX
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs: 13.4mOhm @ 30A, 10V
Power Dissipation (Max): 2.2W (Ta), 43W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 40µA
Supplier Device Package: MG-WDSON-2-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2300 pF @ 50 V
auf Bestellung 4635 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
317+1.67 EUR
Mindestbestellmenge: 317
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STT800N18P55XPSA1 Infineon-STT800N18P55-DataSheet-v03_01-EN.pdf?fileId=5546d46272aa54c00172bc9961ca5665
STT800N18P55XPSA1
Hersteller: Infineon Technologies
Description: THYR / DIODE MODULE DK
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: 125°C (TJ)
Structure: 1-Phase Controller - All SCRs
Current - Hold (Ih) (Max): 300 mA
Current - Gate Trigger (Igt) (Max): 200 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 6300A @ 60Hz
Number of SCRs, Diodes: 2 SCRs
Voltage - Gate Trigger (Vgt) (Max): 2 V
Voltage - Off State: 1.8 kV
Produkt ist nicht verfügbar
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IMC301AF064XUMA1 IMC301A_IMC302A_Rev1.0_12-12-19.pdf
IMC301AF064XUMA1
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 128KB FLASH 64LQFP
Packaging: Tape & Reel (TR)
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 128KB (128K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: A/D 7x12b, D/A 7x1b Sigma-Delta
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Connectivity: CANbus, I²C, LINbus, SPI, UART/USART, USI
Peripherals: Brown-out Detect/Reset, I²S, LED, POR, PWM, WDT
Supplier Device Package: 64-QFP (10x10)
Part Status: Active
Number of I/O: 41
Produkt ist nicht verfügbar
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IMC302AF064XUMA1 IMC301A_IMC302A_Rev1.0_12-12-19.pdf
IMC302AF064XUMA1
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 128KB FLASH 64LQFP
Packaging: Tape & Reel (TR)
Package / Case: 64-LQFP
Mounting Type: Surface Mount
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Supplier Device Package: 64-QFP (10x10)
Number of I/O: 41
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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PEB4265V V1.1 INTL-S-A0006019977-1.pdf?t.download=true&u=5oefqw
Hersteller: Infineon Technologies
Description: DUSLIC DUAL CHANNEL SLIC
Packaging: Bulk
auf Bestellung 1745 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
72+6.78 EUR
Mindestbestellmenge: 72
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PEB4265VV1.1 INTL-S-A0006019977-1.pdf?t.download=true&u=5oefqw
Hersteller: Infineon Technologies
Description: DUSLIC DUAL CHANNEL SLIC
Packaging: Bulk
auf Bestellung 588 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
72+6.78 EUR
Mindestbestellmenge: 72
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PEB4265VV1.2 INTL-S-A0006019977-1.pdf?t.download=true&u=5oefqw
Hersteller: Infineon Technologies
Description: DUSLIC DUAL CHANNEL SUBSCRIBER L
Packaging: Bulk
auf Bestellung 2450 Stücke:
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Anzahl Preis
63+7.77 EUR
Mindestbestellmenge: 63
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XMC1402T038X0128AAXUMA1 Infineon-XMC1400-DS-v01_03-EN.pdf?fileId=5546d46250cc1fdf015110a2596343b2
XMC1402T038X0128AAXUMA1
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 128KB FLASH 38TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 38-TFSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 128KB (128K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: A/D 12x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V
Connectivity: I2C, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, DMA, I2S, POR, PWM, WDT
Supplier Device Package: PG-TSSOP-38-9
Part Status: Active
Number of I/O: 26
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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XMC1402T038X0128AAXUMA1 Infineon-XMC1400-DS-v01_03-EN.pdf?fileId=5546d46250cc1fdf015110a2596343b2
XMC1402T038X0128AAXUMA1
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 128KB FLASH 38TSSOP
Packaging: Cut Tape (CT)
Package / Case: 38-TFSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 128KB (128K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: A/D 12x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V
Connectivity: I2C, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, DMA, I2S, POR, PWM, WDT
Supplier Device Package: PG-TSSOP-38-9
Part Status: Active
Number of I/O: 26
DigiKey Programmable: Not Verified
auf Bestellung 2799 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+5.02 EUR
10+3.76 EUR
25+3.44 EUR
100+3.09 EUR
250+2.93 EUR
500+2.83 EUR
1000+2.75 EUR
Mindestbestellmenge: 4
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BSL214NL6327 INFNS16734-1.pdf?t.download=true&u=5oefqw
BSL214NL6327
Hersteller: Infineon Technologies
Description: SMALL SIGNAL N-CHANNEL MOSFET
Produkt ist nicht verfügbar
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BSL215PL6327 INFNS16735-1.pdf?t.download=true&u=5oefqw
BSL215PL6327
Hersteller: Infineon Technologies
Description: P-CHANNEL MOSFET
Packaging: Bulk
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 500mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 1.5A
Input Capacitance (Ciss) (Max) @ Vds: 346pF @ 15V
Rds On (Max) @ Id, Vgs: 150mOhm @ 1.5A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 3.55nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.2V @ 11µA
Supplier Device Package: PG-TSOP6-6
Produkt ist nicht verfügbar
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BSL205NL6327 INFNS16732-1.pdf?t.download=true&u=5oefqw
BSL205NL6327
Hersteller: Infineon Technologies
Description: SMALL SIGNAL N-CHANNEL MOSFET
Produkt ist nicht verfügbar
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BSL207NL6327 INFNS16733-1.pdf?t.download=true&u=5oefqw
BSL207NL6327
Hersteller: Infineon Technologies
Description: MOSFET 2N-CH 20V 2.1A TSOP6-6
Packaging: Bulk
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 500mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 2.1A
Input Capacitance (Ciss) (Max) @ Vds: 419pF @ 10V
Rds On (Max) @ Id, Vgs: 70mOhm @ 2.1A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 2.1nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.2V @ 11µA
Supplier Device Package: PG-TSOP6-6
Produkt ist nicht verfügbar
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BSL202SNL6327 INFNS16731-1.pdf?t.download=true&u=5oefqw
BSL202SNL6327
Hersteller: Infineon Technologies
Description: SMALL SIGNAL N-CHANNEL MOSFET
Produkt ist nicht verfügbar
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D3041N68TXPSA1 Infineon-D3041N-DS-v04_02-EN.pdf?fileId=db3a304412b407950112b42f9c084c6b
Hersteller: Infineon Technologies
Description: DIODE GEN PURP 6.8KV 4090A
Produkt ist nicht verfügbar
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D3041N58TXPSA1 D3041N.pdf
Hersteller: Infineon Technologies
Description: DIODE GEN PURP 5.8KV 4090A
Produkt ist nicht verfügbar
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EVALM12ED2106STOBO1 Infineon-EVAL-M1-2ED2106S-UserManual-v01_00-EN.pdf?fileId=5546d4626df6ee62016e17c7e89f3ab5
EVALM12ED2106STOBO1
Hersteller: Infineon Technologies
Description: EVAL BOARD FOR M12ED2106S
Packaging: Bulk
Function: Motor Controller/Driver, Stepper
Type: Power Management
Utilized IC / Part: M12ED2106S
Supplied Contents: Board(s)
Part Status: Active
Contents: Board(s)
auf Bestellung 2 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+411.17 EUR
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TLD1310ELXUMA1 Infineon-TLD1310EL-DS-v01_01-EN.pdf?fileId=5546d46258fc0bc101596e255d303500
TLD1310ELXUMA1
Hersteller: Infineon Technologies
Description: IC LED DRVR LINEAR 120MA 14SSOP
Packaging: Tape & Reel (TR)
Package / Case: 14-LSSOP (0.154", 3.90mm Width) Exposed Pad
Voltage - Output: 40V
Mounting Type: Surface Mount
Number of Outputs: 3
Type: Linear
Operating Temperature: -40°C ~ 150°C (TJ)
Current - Output / Channel: 120mA
Internal Switch(s): Yes
Supplier Device Package: PG-SSOP-14-5
Voltage - Supply (Min): 5.5V
Voltage - Supply (Max): 40V
Part Status: Active
Grade: Automotive
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2500+0.75 EUR
Mindestbestellmenge: 2500
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TLD1310ELXUMA1 Infineon-TLD1310EL-DS-v01_01-EN.pdf?fileId=5546d46258fc0bc101596e255d303500
TLD1310ELXUMA1
Hersteller: Infineon Technologies
Description: IC LED DRVR LINEAR 120MA 14SSOP
Packaging: Cut Tape (CT)
Package / Case: 14-LSSOP (0.154", 3.90mm Width) Exposed Pad
Voltage - Output: 40V
Mounting Type: Surface Mount
Number of Outputs: 3
Type: Linear
Operating Temperature: -40°C ~ 150°C (TJ)
Current - Output / Channel: 120mA
Internal Switch(s): Yes
Supplier Device Package: PG-SSOP-14-5
Voltage - Supply (Min): 5.5V
Voltage - Supply (Max): 40V
Part Status: Active
Grade: Automotive
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
10+1.78 EUR
14+1.28 EUR
25+1.15 EUR
100+1.02 EUR
250+0.95 EUR
500+0.91 EUR
1000+0.88 EUR
Mindestbestellmenge: 10
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BTT60302ERBXUMA1 Infineon-BTT6030-2ERB-DS-v01_00-EN.pdf?fileId=5546d46269e1c019016a21fa51430d86
BTT60302ERBXUMA1
Hersteller: Infineon Technologies
Description: IC PWR SWITCH N-CHAN 1:1 TDSO-14
Packaging: Cut Tape (CT)
Package / Case: 14-SOIC (0.154", 3.90mm Width) Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 2
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 32mOhm
Input Type: Non-Inverting
Voltage - Load: 5V ~ 36V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 4A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-TDSO-14-31
Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, Over Voltage
Part Status: Active
Grade: Automotive
Qualification: AEC-Q100
auf Bestellung 4846 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+5.84 EUR
10+4.41 EUR
25+4.05 EUR
100+3.66 EUR
250+3.47 EUR
500+3.36 EUR
1000+3.27 EUR
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BTT6030-2EKBXUMA1
Hersteller: Infineon Technologies
Description: DUAL HIGH-SIDE POWER SWITCH
Produkt ist nicht verfügbar
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BTT60302EKBXUMA1 BTT6030-2EKB.pdf
BTT60302EKBXUMA1
Hersteller: Infineon Technologies
Description: IC PWR SWITCH N-CHAN 1:1 DSO-14
Packaging: Cut Tape (CT)
Package / Case: 14-SOIC (0.154", 3.90mm Width) Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 2
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 32mOhm
Input Type: Non-Inverting
Voltage - Load: 5V ~ 36V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 4A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-DSO-14-40-EP
Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, Over Voltage
Grade: Automotive
Qualification: AEC-Q100
auf Bestellung 4378 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+6.95 EUR
10+5.26 EUR
25+4.84 EUR
100+4.38 EUR
250+4.16 EUR
500+4.03 EUR
1000+3.92 EUR
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CY29774AXI
CY29774AXI
Hersteller: Infineon Technologies
Description: IC FANOUT DIST 52TQFP
Packaging: Bulk
Package / Case: 52-TQFP
Mounting Type: Surface Mount
Output: LVCMOS
Frequency - Max: 125MHz
Type: Fanout Distribution, Multiplexer, Zero Delay Buffer
Input: LVCMOS
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2.375V ~ 3.465V
Ratio - Input:Output: 2:14
Differential - Input:Output: No/No
Supplier Device Package: 52-TQFP (10x10)
PLL: Yes with Bypass
Divider/Multiplier: Yes/No
Number of Circuits: 1
DigiKey Programmable: Not Verified
auf Bestellung 9065 Stücke:
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Anzahl Preis
42+12.15 EUR
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CY7C1297H-133AXC CY7C1297H.pdf
CY7C1297H-133AXC
Hersteller: Infineon Technologies
Description: IC SRAM 1MBIT PARALLEL 100TQFP
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Memory Size: 1Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 3.135V ~ 3.6V
Technology: SRAM - Synchronous, SDR
Clock Frequency: 133 MHz
Memory Format: SRAM
Supplier Device Package: 100-TQFP (14x20)
Memory Interface: Parallel
Memory Organization: 64K x 18
DigiKey Programmable: Not Verified
auf Bestellung 258 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
18+28.35 EUR
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F4-50R12MS4 INFNS28281-1.pdf?t.download=true&u=5oefqw
Hersteller: Infineon Technologies
Description: IGBT, 70A, 1200V, N-CHANNEL
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Full Bridge Inverter
Operating Temperature: -40°C ~ 125°C (TJ)
Vce(on) (Max) @ Vge, Ic: 3.75V @ 15V, 50A
NTC Thermistor: Yes
Current - Collector (Ic) (Max): 70 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 355 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 3.4 nF @ 25 V
auf Bestellung 901 Stücke:
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Anzahl Preis
6+80.71 EUR
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FF450R12ME3BOSA1
FF450R12ME3BOSA1
Hersteller: Infineon Technologies
Description: IGBT MOD 1200V 600A 2100W MOD
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge
Operating Temperature: -40°C ~ 125°C
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 450A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 600 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 2100 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 32 nF @ 25 V
auf Bestellung 125 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+361.72 EUR
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FF450R12ME4B11BPSA1 Infineon-FF450R12ME4_B11-DS-v02_00-en_de.pdf?fileId=db3a3043353fdc16013543e3dc143207
FF450R12ME4B11BPSA1
Hersteller: Infineon Technologies
Description: IGBT MOD 1200V 675A 2250W
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: 2 Independent
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 450A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Part Status: Discontinued at Digi-Key
Current - Collector (Ic) (Max): 675 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 2250 W
Current - Collector Cutoff (Max): 3 mA
Input Capacitance (Cies) @ Vce: 28 nF @ 25 V
Produkt ist nicht verfügbar
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F450R12KS4BOSA1 Infineon-F4_50R12KS4-DS-v02_00-en_de.pdf?fileId=db3a304412b407950112b43163e9542e
F450R12KS4BOSA1
Hersteller: Infineon Technologies
Description: IGBT MOD 1200V 70A 355W
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 125°C
Vce(on) (Max) @ Vge, Ic: 3.75V @ 15V, 50A
NTC Thermistor: Yes
Supplier Device Package: Module
Part Status: Discontinued at Digi-Key
Current - Collector (Ic) (Max): 70 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 355 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 3.4 nF @ 25 V
Produkt ist nicht verfügbar
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F450R12KS4B11BOSA1 Infineon-F4_50R12KS4_B11-DS-v02_00-en_de.pdf?fileId=db3a3043345a30bc01346aa2466e1366
F450R12KS4B11BOSA1
Hersteller: Infineon Technologies
Description: IGBT MOD 1200V 70A 355W MOD
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 125°C
Vce(on) (Max) @ Vge, Ic: 3.75V @ 15V, 50A
NTC Thermistor: Yes
Supplier Device Package: Module
Part Status: Discontinued at Digi-Key
Current - Collector (Ic) (Max): 70 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 355 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 3.4 nF @ 25 V
Produkt ist nicht verfügbar
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FF450R12KE4PHOSA1 Infineon-FF450R12KE4P-DS-v02_00-EN.pdf?fileId=5546d46253a864fe0153e679fa2d78c7
FF450R12KE4PHOSA1
Hersteller: Infineon Technologies
Description: IGBT MODULE 1200V 450A
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge Inverter
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 450A
NTC Thermistor: No
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 450 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 28 nF @ 25 V
Produkt ist nicht verfügbar
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FF450R12ME3BOSA1
FF450R12ME3BOSA1
Hersteller: Infineon Technologies
Description: IGBT MOD 1200V 600A 2100W MOD
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge
Operating Temperature: -40°C ~ 125°C
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 450A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 600 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 2100 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 32 nF @ 25 V
Produkt ist nicht verfügbar
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ICB1FL01G ICB1FL01G.pdf
ICB1FL01G
Hersteller: Infineon Technologies
Description: IC PFC/BALLAST CTR 100KHZ DSO-18
auf Bestellung 29880 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
245+1.98 EUR
Mindestbestellmenge: 245
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TLD5098EPXUMA1 Infineon-TLD5098EP-DataSheet-v01_00-EN.pdf?fileId=5546d4626c1f3dc3016c620b67681811
TLD5098EPXUMA1
Hersteller: Infineon Technologies
Description: IC LED DRV CTRL PWM 90MA 14TSDSO
Packaging: Tape & Reel (TR)
Package / Case: 14-TSSOP (0.154", 3.90mm Width) Exposed Pad
Voltage - Output: 4.5V ~ 5.5V
Mounting Type: Surface Mount
Number of Outputs: 1
Frequency: 100kHz ~ 500kHz
Type: DC DC Controller
Operating Temperature: -40°C ~ 150°C (TJ)
Current - Output / Channel: 90mA
Internal Switch(s): No
Topology: Flyback, SEPIC, Step-Down (Buck), Step-Up (Boost)
Supplier Device Package: PG-TSDSO-14
Dimming: Analog, PWM
Voltage - Supply (Min): 4.5V
Voltage - Supply (Max): 45V
Part Status: Active
Grade: Automotive
Qualification: AEC-Q100
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+1.35 EUR
Mindestbestellmenge: 3000
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BTF3050EJDEMOBOARDTOBO1 Infineon-Demoboard_BTFxxxEJ-UserManual-v01_00-EN.pdf?fileId=5546d462712ef9b701712fc897870114
BTF3050EJDEMOBOARDTOBO1
Hersteller: Infineon Technologies
Description: BTF3050EJ DEMOBOARD
Packaging: Bulk
Function: Switch
Type: Power Management
Contents: Board(s)
Utilized IC / Part: BTF3050EJ
Platform: Arduino
Produkt ist nicht verfügbar
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BTF3125EJDEMOBOARDTOBO1 Infineon-Demoboard_BTFxxxEJ-UserManual-v01_00-EN.pdf?fileId=5546d462712ef9b701712fc897870114
BTF3125EJDEMOBOARDTOBO1
Hersteller: Infineon Technologies
Description: BTF3125J DEMOBOARD
Packaging: Bulk
Function: Switch
Type: Power Management
Contents: Board(s)
Utilized IC / Part: BTF3125EJ
Platform: Arduino
auf Bestellung 1 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+85.55 EUR
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BTF3035EJDEMOBOARDTOBO1 Infineon-Demoboard_BTFxxxEJ-UserManual-v01_00-EN.pdf?fileId=5546d462712ef9b701712fc897870114
BTF3035EJDEMOBOARDTOBO1
Hersteller: Infineon Technologies
Description: BTF3035EJ DEMOBOARD
Packaging: Bulk
Function: Switch
Type: Power Management
Contents: Board(s)
Utilized IC / Part: BTF3035EJ
Platform: Arduino
Part Status: Active
auf Bestellung 5 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+77.32 EUR
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DF100R07W1H5FPB54BPSA2 Infineon-DF100R07W1H5FP_B54-DS-v03_00-EN.pdf?fileId=5546d4625b3ca4ec015b5761855903ab
DF100R07W1H5FPB54BPSA2
Hersteller: Infineon Technologies
Description: IGBT MODULE 650V 40A MODULE
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: 2 Independent
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.55V @ 15V, 25A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 40 µA
Input Capacitance (Cies) @ Vce: 2.8 nF @ 25 V
auf Bestellung 1 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+55.7 EUR
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DF100R07W1H5FPB53BPSA2 Infineon-DF100R07W1H5FP_B53-DataSheet-v03_00-EN.pdf?fileId=5546d46259d9a4bf015a64b1b0c55aed
DF100R07W1H5FPB53BPSA2
Hersteller: Infineon Technologies
Description: IGBT MODULE 650V 40A MODULE
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: 2 Independent
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 1.55V @ 15V, 25A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 40 µA
Input Capacitance (Cies) @ Vce: 2.8 nF @ 25 V
auf Bestellung 6 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+55.7 EUR
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BFG 19S E6327 BFG19S.pdf
BFG 19S E6327
Hersteller: Infineon Technologies
Description: RF TRANS NPN 15V 5.5GHZ SOT223-4
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 14dB ~ 8.5dB
Power - Max: 1W
Current - Collector (Ic) (Max): 210mA
Voltage - Collector Emitter Breakdown (Max): 15V
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 70mA, 8V
Frequency - Transition: 5.5GHz
Noise Figure (dB Typ @ f): 2dB ~ 3dB @ 900MHz ~ 1.8GHz
Supplier Device Package: PG-SOT223-4
Produkt ist nicht verfügbar
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ISC045N03L5SATMA1 Infineon-ISC045N03L5S-DataSheet-v02_00-EN.pdf?fileId=5546d46270c4f93e0170e8c2360e098e
ISC045N03L5SATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 30V 18A/63A TDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 63A (Tc)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 30A, 10V
Power Dissipation (Max): 2.5W (Ta), 30W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TDSON-8-6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 870 pF @ 15 V
Produkt ist nicht verfügbar
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TLE4208G TLE4208G_2016.pdf?t.download=true&u=5oefqw
TLE4208G
Hersteller: Infineon Technologies
Description: BRUSH DC MOTOR CONTROLLER, 1A
Packaging: Bulk
Package / Case: 28-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 800mA
Interface: Parallel
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge (4)
Voltage - Supply: 5V ~ 18V
Applications: General Purpose
Technology: Bipolar
Voltage - Load: 5V ~ 18V
Supplier Device Package: P-DSO-28
Motor Type - AC, DC: Brushed DC
Part Status: Active
auf Bestellung 94404 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
135+3.71 EUR
Mindestbestellmenge: 135
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IGD01N120H2BUMA1 INFNS16255-1.pdf?t.download=true&u=5oefqw
IGD01N120H2BUMA1
Hersteller: Infineon Technologies
Description: POWER BIPOLAR TRANSISTOR, 3.2A I
Produkt ist nicht verfügbar
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BB914E6327HTSA1 INFNS15712-1.pdf?t.download=true&u=5oefqw
BB914E6327HTSA1
Hersteller: Infineon Technologies
Description: DIODE VARACTOR 18V DUAL SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Diode Type: 1 Pair Common Cathode
Operating Temperature: -55°C ~ 125°C (TJ)
Capacitance @ Vr, F: 19.75pF @ 8V, 1MHz
Capacitance Ratio Condition: C2/C8
Supplier Device Package: PG-SOT23
Part Status: Active
Voltage - Peak Reverse (Max): 18 V
Capacitance Ratio: 2.42
auf Bestellung 313 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
18+1.02 EUR
29+0.63 EUR
100+0.4 EUR
Mindestbestellmenge: 18
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IPD082N10N3GATMA1 Infineon-IPP086N10N3G-DS-v02_06-en.pdf?fileId=db3a30431ce5fb52011d1ac5c8fa1358
IPD082N10N3GATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 100V 80A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 8.2mOhm @ 73A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 75µA
Supplier Device Package: PG-TO252-3
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3980 pF @ 50 V
auf Bestellung 13807 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5+3.8 EUR
10+2.45 EUR
100+1.68 EUR
500+1.34 EUR
1000+1.33 EUR
Mindestbestellmenge: 5
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IR4227PBF IRSDS09409-1.pdf?t.download=true&u=5oefqw
IR4227PBF
Hersteller: Infineon Technologies
Description: GATE DRIVER IC
Packaging: Bulk
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 6V ~ 20V
Input Type: Non-Inverting
Supplier Device Package: 8-PDIP
Rise / Fall Time (Typ): 15ns, 10ns
Channel Type: Independent
Driven Configuration: Low-Side
Number of Drivers: 2
Gate Type: IGBT, N-Channel MOSFET
Logic Voltage - VIL, VIH: 0.8V, 2.7V
Current - Peak Output (Source, Sink): 2.3A, 3.3A
Part Status: Active
Produkt ist nicht verfügbar
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IPD80R2K7C3AATMA1 Infineon-IPD80R2K7C3A-DS-v01_01-EN.pdf?fileId=5546d4625e763904015ec2d9c72064a0
IPD80R2K7C3AATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Tc)
Rds On (Max) @ Id, Vgs: 2.7Ohm @ 1.2A, 10V
Power Dissipation (Max): 42W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 1.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 290 pF @ 100 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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BSC889N03MSG INFNS15761-1.pdf?t.download=true&u=5oefqw
BSC889N03MSG
Hersteller: Infineon Technologies
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 44A (Tc)
Rds On (Max) @ Id, Vgs: 9.1mOhm @ 30A, 10V
Power Dissipation (Max): 2.5W (Ta), 28W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TSDSON-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 15 V
auf Bestellung 15000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1154+0.43 EUR
Mindestbestellmenge: 1154
Im Einkaufswagen  Stück im Wert von  UAH
BSC119N03MSCG INFNS13709-1.pdf?t.download=true&u=5oefqw
BSC119N03MSCG
Hersteller: Infineon Technologies
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 39A (Tc)
Rds On (Max) @ Id, Vgs: 11.9mOhm @ 30A, 10V
Power Dissipation (Max): 2.5W (Ta), 28W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TDSON-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 15 V
auf Bestellung 160000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1094+0.45 EUR
Mindestbestellmenge: 1094
Im Einkaufswagen  Stück im Wert von  UAH
BSC889N03LSG INFNS15760-1.pdf?t.download=true&u=5oefqw
BSC889N03LSG
Hersteller: Infineon Technologies
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 45A (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 30A, 10V
Power Dissipation (Max): 2.5W (Ta), 28W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: PG-TDSON-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 15 V
auf Bestellung 329990 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1126+0.48 EUR
Mindestbestellmenge: 1126
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ISC019N03L5SATMA1 Infineon-ISC019N03L5S-DataSheet-v02_00-EN.pdf?fileId=5546d46270c4f93e0170e8a6c201097f
ISC019N03L5SATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 30V 28A/100A TDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 1.9mOhm @ 30A, 10V
Power Dissipation (Max): 2.5W (Ta), 69W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TDSON-8-5
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2800 pF @ 15 V
auf Bestellung 15000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5000+0.51 EUR
Mindestbestellmenge: 5000
Im Einkaufswagen  Stück im Wert von  UAH
ISC019N03L5SATMA1 Infineon-ISC019N03L5S-DataSheet-v02_00-EN.pdf?fileId=5546d46270c4f93e0170e8a6c201097f
ISC019N03L5SATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 30V 28A/100A TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 1.9mOhm @ 30A, 10V
Power Dissipation (Max): 2.5W (Ta), 69W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TDSON-8-5
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2800 pF @ 15 V
auf Bestellung 18544 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
25+0.7 EUR
26+0.68 EUR
100+0.57 EUR
500+0.56 EUR
1000+0.55 EUR
2000+0.54 EUR
Mindestbestellmenge: 25
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ISZ019N03L5SATMA1 Infineon-ISZ019N03L5S-DataSheet-v02_00-EN.pdf?fileId=5546d46270c4f93e0170e8c249de0991
ISZ019N03L5SATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 30V 22A/40A TSDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs: 1.9mOhm @ 20A, 10V
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TSDSON-8-FL
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2800 pF @ 15 V
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5000+0.81 EUR
Mindestbestellmenge: 5000
Im Einkaufswagen  Stück im Wert von  UAH
ISZ019N03L5SATMA1 Infineon-ISZ019N03L5S-DataSheet-v02_00-EN.pdf?fileId=5546d46270c4f93e0170e8c249de0991
ISZ019N03L5SATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 30V 22A/40A TSDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs: 1.9mOhm @ 20A, 10V
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TSDSON-8-FL
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2800 pF @ 15 V
auf Bestellung 9848 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
8+2.45 EUR
11+1.65 EUR
100+1.16 EUR
500+0.94 EUR
1000+0.87 EUR
2000+0.81 EUR
Mindestbestellmenge: 8
Im Einkaufswagen  Stück im Wert von  UAH
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