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BSM150GT120DN2BOSA1 Infineon Technologies Description: IGBT MODULE 1200V
Packaging: Tray
Part Status: Last Time Buy
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FP35R12KT4B11BOSA1 FP35R12KT4B11BOSA1 Infineon Technologies Infineon-FP35R12KT4_B11-DS-v03_00-en_de.pdf?fileId=db3a30431689f4420116c457e537082f Description: IGBT MOD 1200V 35A 210W MOD
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 35A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 35 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 210 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 2 nF @ 25 V
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ESD204B102ELSE6327XTSA1 ESD204B102ELSE6327XTSA1 Infineon Technologies ESD204-B1-02.pdf Description: TVS DIODE 14VWM 28V PGTSSLP23
Power Line Protection: No
Voltage - Clamping (Max) @ Ipp: 28V
Voltage - Breakdown (Min): 8.5V
Bidirectional Channels: 1
Supplier Device Package: PG-TSSLP-2-3
Voltage - Reverse Standoff (Typ): 14V (Max)
Current - Peak Pulse (10/1000µs): 1A (8/20µs)
Capacitance @ Frequency: 4pF @ 1MHz
Applications: General Purpose
Operating Temperature: -55°C ~ 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: 0201 (0603 Metric)
Packaging: Bulk
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IKW20N65ET7XKSA1 IKW20N65ET7XKSA1 Infineon Technologies Infineon-IKW20N65ET7-DataSheet-v02_01-EN.pdf?fileId=5546d46272e49d2a017351bea06e57ef Description: IGBT TRENCH FS 650V 40A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 70 ns
Vce(on) (Max) @ Vge, Ic: 1.65V @ 15V, 20A
Supplier Device Package: PG-TO247-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 16ns/210ns
Switching Energy: 360µJ (on), 360µJ (off)
Test Condition: 400V, 20A, 12Ohm, 15V
Gate Charge: 128 nC
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 60 A
Power - Max: 136 W
Qualification: AEC-Q101
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IKW50N65ET7XKSA1 IKW50N65ET7XKSA1 Infineon Technologies Infineon-IKW50N65ET7-DataSheet-v02_01-EN.pdf?fileId=5546d46272e49d2a017351bed62757f8 Description: IGBT TRENCH FS 650V 50A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 93 ns
Vce(on) (Max) @ Vge, Ic: 1.65V @ 15V, 50A
Supplier Device Package: PG-TO247-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 26ns/350ns
Switching Energy: 1.2mJ (on), 850µJ (off)
Test Condition: 400V, 50A, 9Ohm, 15V
Gate Charge: 290 nC
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 50 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 150 A
Power - Max: 273 W
Qualification: AEC-Q101
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BAV70WE6327 BAV70WE6327 Infineon Technologies INFNS11270-1.pdf?t.download=true&u=5oefqw Description: HIGH SPEED SWITCHING DIODE
Packaging: Bulk
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 200mA (DC)
Supplier Device Package: SOT-323
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 150 nA @ 70 V
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BAV70WH6433 BAV70WH6433 Infineon Technologies INFNS11270-1.pdf?t.download=true&u=5oefqw Description: DIODE ARRAY GP 80V 200MA SOT323
Packaging: Bulk
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 200mA (DC)
Supplier Device Package: SOT-323
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 150 nA @ 70 V
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BAV 70W H6327 BAV 70W H6327 Infineon Technologies INFNS11270-1.pdf?t.download=true&u=5oefqw Description: DIODE ARRAY GP 80V 200MA SOT323
Packaging: Bulk
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 200mA (DC)
Supplier Device Package: SOT-323
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 150 nA @ 70 V
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BSZ900N15NS3GATMA1 BSZ900N15NS3GATMA1 Infineon Technologies BSZ900N15NS3+Rev2.1.pdf?folderId=db3a304326623792012669f6bee2224b&fileId=db3a304326623792012669f7decc224c Description: MOSFET N-CH 150V 13A 8TSDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
Rds On (Max) @ Id, Vgs: 90mOhm @ 10A, 10V
Power Dissipation (Max): 38W (Tc)
Vgs(th) (Max) @ Id: 4V @ 20µA
Supplier Device Package: PG-TSDSON-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 510 pF @ 75 V
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500+0.79 EUR
1000+0.71 EUR
2000+0.65 EUR
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BCR133E6393 BCR133E6393 Infineon Technologies Infineon-TLV4961-3M-DS-v01_00-EN.pdf?fileId=5546d46253f650570154529f327d6fdf Description: SMALL SIGNAL BIPOLAR TRANSISTOR
Resistor - Emitter Base (R2): 10 kOhms
Resistor - Base (R1): 10 kOhms
Frequency - Transition: 130 MHz
Power - Max: 200 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Active
Supplier Device Package: PG-SOT23-3-3
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Transistor Type: NPN - Pre-Biased
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Bulk
Produkt ist nicht verfügbar
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BCR133TE6327 BCR133TE6327 Infineon Technologies INFNS11633-1.pdf?t.download=true&u=5oefqw Description: BIPOLAR DIGITAL TRANSISTOR
Packaging: Bulk
Resistor - Base (R1): 10 kOhms
Frequency - Transition: 130 MHz
Power - Max: 200 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Active
Supplier Device Package: PG-SOT23-3-11
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Transistor Type: NPN - Pre-Biased
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Resistor - Emitter Base (R2): 10 kOhms
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ICE2A165IN ICE2A165IN Infineon Technologies Infineon-ICE2XXX-DS-v02_10-en.pdf?fileId=db3a304412b407950112b418cbe626ac Description: IC OFFLINE SWITCH FLYBACK 8DIP
Power (Watts): 31 W
Part Status: Active
Control Features: Soft Start
Voltage - Start Up: 13.5 V
Fault Protection: Current Limiting, Open Loop, Over Load, Over Temperature, Over Voltage
Supplier Device Package: PG-DIP-8
Voltage - Supply (Vcc/Vdd): 6.5V ~ 21V
Topology: Flyback
Output Isolation: Isolated
Voltage - Breakdown: 650V
Internal Switch(s): Yes
Frequency - Switching: 100kHz
Duty Cycle: 72%
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: 8-DIP (0.300", 7.62mm)
Packaging: Bulk
Produkt ist nicht verfügbar
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TLE4267GM TLE4267GM Infineon Technologies Infineon-TLE4267-DS-v02_51-EN.pdf?fileId=5546d46259d9a4bf0159f967db593e49 Description: IC REG LIN FIXED POS LDO REG 5V
Current - Supply (Max): 80 mA
Protection Features: Over Temperature, Over Voltage, Reverse Polarity, Short Circuit, Transient Voltage
Voltage Dropout (Max): 0.6V @ 400mA
PSRR: 54dB (100Hz)
Part Status: Active
Control Features: Inhibit, Reset
Voltage - Output (Min/Fixed): 5V
Supplier Device Package: PG-DSO-14
Number of Regulators: 1
Voltage - Input (Max): 40V
Current - Quiescent (Iq): 4 mA
Output Configuration: Positive
Operating Temperature: -40°C ~ 150°C (TJ)
Current - Output: 400mA
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Packaging: Bulk
Produkt ist nicht verfügbar
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BAT15-099E6327 BAT15-099E6327 Infineon Technologies INFNS15420-1.pdf?t.download=true&u=5oefqw Description: DIODE SCHOTTKY 4V 100MW SOT1434
Power Dissipation (Max): 100 mW
Current - Max: 110 mA
Part Status: Active
Supplier Device Package: PG-SOT143-4
Voltage - Peak Reverse (Max): 4V
Resistance @ If, F: 5.5Ohm @ 50mA, 1MHz
Capacitance @ Vr, F: 0.5pF @ 0V, 1MHz
Operating Temperature: 150°C (TJ)
Diode Type: Schottky - 2 Independent
Package / Case: TO-253-4, TO-253AA
Packaging: Bulk
Produkt ist nicht verfügbar
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BCW60FFE6327 BCW60FFE6327 Infineon Technologies INFNS11039-1.pdf?t.download=true&u=5oefqw Description: BCW60 - LOW NOISE TRANSISTOR
Power - Max: 330 mW
Voltage - Collector Emitter Breakdown (Max): 32 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Active
Supplier Device Package: PG-SOT23
Frequency - Transition: 250MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 2mA, 5V
Current - Collector Cutoff (Max): 20nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 550mV @ 1.25mA, 50mA
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Bulk
Produkt ist nicht verfügbar
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BF1005SE6327HTSA1 BF1005SE6327HTSA1 Infineon Technologies BF1005S_Series.pdf Description: RF MOSFET 5V SOT143
Gain: 22dB
Configuration: N-Channel
Frequency: 800MHz
Mounting Type: Surface Mount
Current Rating (Amps): 25mA
Package / Case: TO-253-4, TO-253AA
Packaging: Bulk
Voltage - Test: 5 V
Voltage - Rated: 8 V
Part Status: Obsolete
Supplier Device Package: PG-SOT-143-3D
Noise Figure: 1.6dB
Technology: MOSFET (Metal Oxide)
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BF1005SE6327 BF1005SE6327 Infineon Technologies INFNS10758-1.pdf?t.download=true&u=5oefqw Description: RF N-CHANNEL MOSFET
Voltage - Test: 5 V
Voltage - Rated: 8 V
Part Status: Active
Supplier Device Package: SOT143 (SC-61)
Noise Figure: 1.6dB
Technology: MOSFET
Gain: 22dB
Configuration: N-Channel
Frequency: 1GHz
Current Rating (Amps): 800µA
Package / Case: TO-253-4, TO-253AA
Packaging: Bulk
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BF1005E6327HTSA1 BF1005E6327HTSA1 Infineon Technologies BF1005.pdf Description: RF MOSFET 5V SOT143
Voltage - Rated: 8 V
Part Status: Obsolete
Supplier Device Package: PG-SOT-143-3D
Noise Figure: 1.6dB
Technology: MOSFET (Metal Oxide)
Gain: 19dB
Configuration: N-Channel
Frequency: 800MHz
Voltage - Test: 5 V
Mounting Type: Surface Mount
Current Rating (Amps): 25mA
Package / Case: TO-253-4, TO-253AA
Packaging: Bulk
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CG7297AM Infineon Technologies Description: IC MCU CAPSENSE 32QFN
Packaging: Tray
DigiKey Programmable: Not Verified
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IPP06CN10LG IPP06CN10LG Infineon Technologies INFNS17009-1.pdf?t.download=true&u=5oefqw Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 6.2mOhm @ 100A, 10V
Power Dissipation (Max): 214W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 180µA
Supplier Device Package: PG-TO220-3-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 124 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11900 pF @ 50 V
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IPP05CN10L G IPP05CN10L G Infineon Technologies IPP05CN10L.pdf Description: MOSFET N-CH 100V 100A TO220-3
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FF450R07ME4BOSA1 FF450R07ME4BOSA1 Infineon Technologies Infineon-FF450R07ME4-DataSheet-v03_00-EN.pdf?fileId=5546d4626e651a41016e7e227bfd1087 Description: IGBT MOD 650V 450A AG-ECONOD-3
Input: Standard
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Tray
Input Capacitance (Cies) @ Vce: 27.5 nF @ 25 V
Current - Collector Cutoff (Max): 1 mA
Power - Max: 20 mW
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector (Ic) (Max): 450 A
Part Status: Active
IGBT Type: Trench Field Stop
Supplier Device Package: AG-ECONOD-3
NTC Thermistor: Yes
Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 450A
Operating Temperature: -40°C ~ 150°C (TJ)
Configuration: 2 Independent
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F4-50R07W2H3_B51 Infineon Technologies F4-50R07W2H3_B51_Rev2.0_10-29-14.pdf Description: IGBT MODULE VCES 650V 50A
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DF450R17N2E4PB11BPSA1 Infineon Technologies Description: IGBT MODULE LOW POWER ECONO
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FF450R06ME3BOSA1 Infineon Technologies Infineon-FF450R06ME3-DS-v03_02-en_de.pdf?fileId=db3a304318a6cd680118e516f837131a Description: IGBT MOD 600V 550A 1250W
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FF450R17ME4B11BOSA1 FF450R17ME4B11BOSA1 Infineon Technologies Infineon-FF450R17ME4_B11-DS-v03_01-en_de.pdf?fileId=db3a30432fbc32ee012fc06716403a90 Description: IGBT MOD 1700V 600A 2500W
Input Capacitance (Cies) @ Vce: 36 nF @ 25 V
Current - Collector Cutoff (Max): 3 mA
Power - Max: 2500 W
Voltage - Collector Emitter Breakdown (Max): 1700 V
Current - Collector (Ic) (Max): 600 A
Part Status: Discontinued at Digi-Key
IGBT Type: Trench Field Stop
Supplier Device Package: Module
NTC Thermistor: Yes
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 450A
Operating Temperature: -40°C ~ 150°C
Configuration: 2 Independent
Input: Standard
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Bulk
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FF450R33T3E3B5P2BPSA1 FF450R33T3E3B5P2BPSA1 Infineon Technologies Infineon-FF450R33T3E3_B5-DS-v03_00-EN.pdf?fileId=5546d46267c74c9a01683cd2886064d9 Description: IGBT MOD 3300V 450A AG-XHP100-6
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: 2 Independent
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.75V @ 15V, 450A
NTC Thermistor: No
Supplier Device Package: AG-XHP100-6
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 450 A
Voltage - Collector Emitter Breakdown (Max): 3300 V
Power - Max: 1000000 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 84 nF @ 25 V
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FF450R33T3E3B5P3BPSA1 Infineon Technologies Infineon-FF450R33T3E3_B5-DS-v03_00-EN.pdf?fileId=5546d46267c74c9a01683cd2886064d9 Description: IGBT MOD 3300V 450A AG-XHP100-6
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: 2 Independent
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.75V @ 15V, 450A
NTC Thermistor: No
Supplier Device Package: AG-XHP100-6
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 450 A
Voltage - Collector Emitter Breakdown (Max): 3300 V
Power - Max: 1000000 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 84 nF @ 25 V
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FF450R33T3E3B5P4BPMA1 Infineon Technologies Infineon-FF450R33T3E3_B5-DS-v03_00-EN.pdf?fileId=5546d46267c74c9a01683cd2886064d9 Description: IGBT MOD 3300V 450A AG-XHP100-6
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: 2 Independent
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.75V @ 15V, 450A
NTC Thermistor: No
Supplier Device Package: AG-XHP100-6
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 450 A
Voltage - Collector Emitter Breakdown (Max): 3300 V
Power - Max: 1000000 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 84 nF @ 25 V
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FF450R33T3E3B5P6BPMA1 Infineon Technologies Infineon-FF450R33T3E3_B5-DS-v03_00-EN.pdf?fileId=5546d46267c74c9a01683cd2886064d9 Description: IGBT MOD 3300V 450A AG-XHP100-6
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: 2 Independent
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.75V @ 15V, 450A
NTC Thermistor: No
Supplier Device Package: AG-XHP100-6
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 450 A
Voltage - Collector Emitter Breakdown (Max): 3300 V
Power - Max: 1000000 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 84 nF @ 25 V
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F450R12KS4B11BOSA1 F450R12KS4B11BOSA1 Infineon Technologies Infineon-F4_50R12KS4_B11-DS-v02_00-en_de.pdf?fileId=db3a3043345a30bc01346aa2466e1366 Description: IGBT MOD 1200V 70A 355W MOD
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 125°C
Vce(on) (Max) @ Vge, Ic: 3.75V @ 15V, 50A
NTC Thermistor: Yes
Supplier Device Package: Module
Part Status: Discontinued at Digi-Key
Current - Collector (Ic) (Max): 70 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 355 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 3.4 nF @ 25 V
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TLS805B1LDV50XUMA1 TLS805B1LDV50XUMA1 Infineon Technologies Infineon-TLS805B1LD%20V50-DS-v01_10-EN.pdf?fileId=5546d46258fc0bc1015969ed62f84247 Description: IC REG LINEAR 5V 50MA PG-TSON-10
Supplier Device Package: PG-TSON-10
Number of Regulators: 1
Voltage - Input (Max): 42V
Current - Quiescent (Iq): 8 µA
Output Configuration: Positive
Operating Temperature: -40°C ~ 150°C (TJ)
Current - Output: 50mA
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: 10-TFDFN Exposed Pad
Packaging: Cut Tape (CT)
Qualification: AEC-Q100
Grade: Automotive
Current - Supply (Max): 12 µA
Protection Features: Over Current, Over Temperature
Voltage Dropout (Max): 0.35V @ 50mA
PSRR: 55dB (100Hz)
Control Features: Enable
Voltage - Output (Min/Fixed): 5V
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TLS805B1LDVBOARDTOBO1 TLS805B1LDVBOARDTOBO1 Infineon Technologies Infineon-Z8F55443029_TLS805x1LD-TLS810x1LD-Demoboard-UserManual-v01_00-EN.pdf?fileId=5546d46259d9a4bf015a46f9d9c8037f Description: EVAL BOARD FOR TLS805B1LDV
Packaging: Box
Channels per IC: 1 - Single
Utilized IC / Part: TLS805B1LDV
Regulator Type: Positive Adjustable
Contents: Board(s)
Current - Output: 50mA
Voltage - Input: 3V ~ 42V
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SPD18P06PG SPD18P06PG Infineon Technologies Infineon-SPD18P06P-DS-v03_04-en.pdf?fileId=db3a30431ed1d7b2011f404c85eb4ee3 Description: SPD18P06 - 20V-250V P-CHANNEL PO
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 18.6A (Tc)
Rds On (Max) @ Id, Vgs: 130mOhm @ 13.2A, 10V
Power Dissipation (Max): 80W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: PG-TO252-3-11
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 860 pF @ 25 V
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IPI320N203G IPI320N203G Infineon Technologies Infineon-IPP_B_I_320N20N3G-DS-v02_03-en.pdf?fileId=db3a3043243b5f170124967064ba184a Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 34A (Tc)
Rds On (Max) @ Id, Vgs: 32mOhm @ 34A, 10V
Power Dissipation (Max): 136W (Tc)
Vgs(th) (Max) @ Id: 4V @ 90µA
Supplier Device Package: PG-TO262-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2350 pF @ 100 V
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BTS426L1E3062ABUMA1 BTS426L1E3062ABUMA1 Infineon Technologies BTS426L1.pdf Description: IC PWR SWITCH N-CHAN 1:1 TO263-5
Features: Auto Restart
Packaging: Cut Tape (CT)
Package / Case: TO-263-5, D2PAK (4 Leads + Tab), TO-263BB
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 50mOhm
Input Type: Non-Inverting
Voltage - Load: 5V ~ 34V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 5.8A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-TO263-5-2
Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, Over Voltage, UVLO
Part Status: Not For New Designs
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IPB45N06S409ATMA2 IPB45N06S409ATMA2 Infineon Technologies IPx45N06S4-09.pdf Description: MOSFET N-CH 60V 45A TO263-3
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IPP45N06S409AKSA2 IPP45N06S409AKSA2 Infineon Technologies IPx45N06S4-09.pdf Description: MOSFET N-CH 60V 45A TO220-3
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
Rds On (Max) @ Id, Vgs: 9.4mOhm @ 45A, 10V
Power Dissipation (Max): 71W (Tc)
Vgs(th) (Max) @ Id: 4V @ 34µA
Supplier Device Package: PG-TO220-3-1
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3785 pF @ 25 V
Qualification: AEC-Q101
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TLD5190QVXUMA1 TLD5190QVXUMA1 Infineon Technologies Infineon-TLD5190QV-DS-v01_10-EN.pdf?fileId=5546d462625a528f0162af122f3300b8 Description: IC LED DRIVER CTRLR PWM 48VQFN
Part Status: Active
Voltage - Supply (Max): 40V
Voltage - Supply (Min): 4.5V
Dimming: Analog, PWM
Supplier Device Package: PG-VQFN-48-31
Topology: Step-Down (Buck), Step-Up (Boost)
Internal Switch(s): No
Operating Temperature: -40°C ~ 150°C (TJ)
Type: DC DC Controller
Frequency: 200kHz ~ 700kHz
Number of Outputs: 1
Mounting Type: Surface Mount
Voltage - Output: 55V
Package / Case: 48-VFQFN Exposed Pad
Packaging: Tape & Reel (TR)
Grade: Automotive
Produkt ist nicht verfügbar
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TLD5190QVXUMA1 TLD5190QVXUMA1 Infineon Technologies Infineon-TLD5190QV-DS-v01_10-EN.pdf?fileId=5546d462625a528f0162af122f3300b8 Description: IC LED DRIVER CTRLR PWM 48VQFN
Part Status: Active
Voltage - Supply (Max): 40V
Voltage - Supply (Min): 4.5V
Dimming: Analog, PWM
Supplier Device Package: PG-VQFN-48-31
Topology: Step-Down (Buck), Step-Up (Boost)
Internal Switch(s): No
Operating Temperature: -40°C ~ 150°C (TJ)
Type: DC DC Controller
Frequency: 200kHz ~ 700kHz
Number of Outputs: 1
Mounting Type: Surface Mount
Voltage - Output: 55V
Package / Case: 48-VFQFN Exposed Pad
Packaging: Cut Tape (CT)
Grade: Automotive
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IPL60R104C7AUMA1 IPL60R104C7AUMA1 Infineon Technologies Infineon-IPL60R104C7-DS-v02_00-EN.pdf?fileId=5546d462518ffd850151b46442265987 Description: MOSFET N-CH 600V 20A 4VSON
Packaging: Tape & Reel (TR)
Package / Case: 4-PowerTSFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 104mOhm @ 9.7A, 10V
Power Dissipation (Max): 122W (Tc)
Vgs(th) (Max) @ Id: 4V @ 490µA
Supplier Device Package: PG-VSON-4
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1819 pF @ 400 V
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IPL60R104C7AUMA1 IPL60R104C7AUMA1 Infineon Technologies Infineon-IPL60R104C7-DS-v02_00-EN.pdf?fileId=5546d462518ffd850151b46442265987 Description: MOSFET N-CH 600V 20A 4VSON
Packaging: Cut Tape (CT)
Package / Case: 4-PowerTSFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 104mOhm @ 9.7A, 10V
Power Dissipation (Max): 122W (Tc)
Vgs(th) (Max) @ Id: 4V @ 490µA
Supplier Device Package: PG-VSON-4
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1819 pF @ 400 V
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IRS2106STRPBF IRS2106STRPBF Infineon Technologies INFN-S-A0002363322-1.pdf?t.download=true&u=5oefqw Description: IC GATE DRVR HI/LOW SIDE 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 100ns, 35ns
Channel Type: Independent
Driven Configuration: High-Side, Low-Side
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Current - Peak Output (Source, Sink): 290mA, 600mA
Part Status: Active
DigiKey Programmable: Not Verified
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IRS2106STRPBF IRS2106STRPBF Infineon Technologies INFN-S-A0002363322-1.pdf?t.download=true&u=5oefqw Description: IC GATE DRVR HI/LOW SIDE 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 100ns, 35ns
Channel Type: Independent
Driven Configuration: High-Side, Low-Side
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Current - Peak Output (Source, Sink): 290mA, 600mA
Part Status: Active
DigiKey Programmable: Not Verified
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SIDC42D120H6X1SA3 Infineon Technologies SIDC42D120H6.pdf Description: DIODE GP 1.2KV 75A WAFER
Current - Reverse Leakage @ Vr: 27 µA @ 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 75 A
Voltage - DC Reverse (Vr) (Max): 1200 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Sawn on foil
Current - Average Rectified (Io): 75A
Technology: Standard
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: Die
Packaging: Bulk
Produkt ist nicht verfügbar
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SIDC42D170E6X1SA2 Infineon Technologies SIDC42D170E6_L4241M.pdf?folderId=db3a304412b407950112b439a4c16e69&fileId=db3a304412b407950112b439a54e6e6a Description: DIODE GP 1.7KV 50A WAFER
Package / Case: Die
Packaging: Bulk
Current - Reverse Leakage @ Vr: 27 µA @ 1700 V
Voltage - Forward (Vf) (Max) @ If: 2.15 V @ 50 A
Voltage - DC Reverse (Vr) (Max): 1700 V
Part Status: Discontinued at Digi-Key
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: Sawn on foil
Current - Average Rectified (Io): 50A
Technology: Standard
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Produkt ist nicht verfügbar
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SIDC46D170HX1SA2 SIDC46D170HX1SA2 Infineon Technologies fundamentals-of-power-semiconductors Description: DIODE STD 1700V 75A SAWN ON FOIL
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 75A
Supplier Device Package: Sawn on foil
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1700 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 75 A
Current - Reverse Leakage @ Vr: 27 µA @ 1700 V
Produkt ist nicht verfügbar
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XMC7201SCQ024XABXUMA1 Infineon Technologies Description: XMC1000
Produkt ist nicht verfügbar
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F4150R12KS4BOSA1 F4150R12KS4BOSA1 Infineon Technologies Infineon-F4_150R12KS4-DS-v02_01-en_de.pdf?fileId=db3a304412b407950112b4327c115855 Description: IGBT MOD 1200V 180A 960W
Input Capacitance (Cies) @ Vce: 10 nF @ 25 V
Current - Collector Cutoff (Max): 5 mA
Power - Max: 960 W
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 180 A
Part Status: Active
Supplier Device Package: Module
NTC Thermistor: Yes
Vce(on) (Max) @ Vge, Ic: 3.75V @ 15V, 150A
Operating Temperature: -40°C ~ 125°C
Configuration: Three Phase Inverter
Input: Standard
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Bulk
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TLE9250SJXUMA1 TLE9250SJXUMA1 Infineon Technologies Infineon-TLE9250-DS-v01_00-EN.pdf?fileId=5546d4625debb399015e14afa3f45977 Description: IC TRANSCEIVER 1/1 PGDSO8
Qualification: AEC-Q100
Grade: Automotive
Part Status: Not For New Designs
Receiver Hysteresis: 100 mV
Supplier Device Package: PG-DSO-8
Protocol: CANbus
Data Rate: 5Mbps
Number of Drivers/Receivers: 1/1
Voltage - Supply: 4.5V ~ 5.5V
Operating Temperature: -40°C ~ 150°C (TJ)
Type: Transceiver
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
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TLE9250SJXUMA1 TLE9250SJXUMA1 Infineon Technologies Infineon-TLE9250-DS-v01_00-EN.pdf?fileId=5546d4625debb399015e14afa3f45977 Description: IC TRANSCEIVER 1/1 PGDSO8
Qualification: AEC-Q100
Grade: Automotive
Part Status: Not For New Designs
Receiver Hysteresis: 100 mV
Supplier Device Package: PG-DSO-8
Protocol: CANbus
Data Rate: 5Mbps
Number of Drivers/Receivers: 1/1
Voltage - Supply: 4.5V ~ 5.5V
Operating Temperature: -40°C ~ 150°C (TJ)
Type: Transceiver
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
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TLE9261BQXV33XUMA1 TLE9261BQXV33XUMA1 Infineon Technologies Infineon-TLE9261BQX%20V33-DS-v01_00-EN.pdf?fileId=5546d462602a9dc801609757fc5a3927 Description: IC INTERFACE SPECIALIZED 48VQFN
Part Status: Not For New Designs
Supplier Device Package: PG-VQFN-48-31
Voltage - Supply: 28V
Interface: SPI
Mounting Type: Surface Mount
Package / Case: 48-VFQFN Exposed Pad
Packaging: Tape & Reel (TR)
Grade: Automotive
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TLE9261BQXV33XUMA1 TLE9261BQXV33XUMA1 Infineon Technologies Infineon-TLE9261BQX%20V33-DS-v01_00-EN.pdf?fileId=5546d462602a9dc801609757fc5a3927 Description: IC INTERFACE SPECIALIZED 48VQFN
Voltage - Supply: 28V
Interface: SPI
Mounting Type: Surface Mount
Package / Case: 48-VFQFN Exposed Pad
Packaging: Cut Tape (CT)
Grade: Automotive
Part Status: Not For New Designs
Supplier Device Package: PG-VQFN-48-31
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4+6.5 EUR
10+4.89 EUR
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100+4.06 EUR
250+3.84 EUR
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TLE92633BQXV33XUMA1 TLE92633BQXV33XUMA1 Infineon Technologies Infineon-TLE9263-3BQX%20V33-DS-v01_00-EN.pdf?fileId=5546d462602a9dc801609805d7dc3987 Description: IC INTERFACE SPECIALIZED 48VQFN
Grade: Automotive
Supplier Device Package: PG-VQFN-48-31
Voltage - Supply: 28V
Interface: SPI
Mounting Type: Surface Mount
Package / Case: 48-VFQFN Exposed Pad
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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TLE6255G Infineon Technologies Description: IC TRANSCEIVER FULL 1/1 DSO-14
Packaging: Bulk
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Type: Transceiver
Operating Temperature: -40°C ~ 150°C
Voltage - Supply: 4.75V ~ 5.25V
Number of Drivers/Receivers: 1/1
Data Rate: 33Kbps
Protocol: CANbus
Supplier Device Package: PG-DSO-14-9
Receiver Hysteresis: 200 mV
Duplex: Full
Part Status: Active
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BTS61101SJAXUMA1 BTS61101SJAXUMA1 Infineon Technologies Infineon-BTS6110-1SJA-DS-v01_01-EN.pdf?fileId=5546d4625a888733015aa3e344b71032 Description: IC PWR SWITCH N-CHAN 1:1 DSO-8
Output Type: N-Channel
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Packaging: Bulk
Output Configuration: High Side
Operating Temperature: -40°C ~ 150°C (TJ)
Switch Type: General Purpose
Interface: On/Off
Number of Outputs: 1
Mounting Type: Surface Mount
Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage
Supplier Device Package: PG-DSO-8-27
Ratio - Input:Output: 1:1
Current - Output (Max): 20A
Voltage - Supply (Vcc/Vdd): Not Required
Voltage - Load: 9V ~ 16V
Rds On (Typ): 80mOhm
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BTS6480SF Infineon Technologies INFNS15568-1.pdf?t.download=true&u=5oefqw Description: SPOC SPI POWER CONTROLLER
Packaging: Bulk
Part Status: Active
Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage, Reverse Battery, Short Circuit
Supplier Device Package: PG-DSO-36-43
Ratio - Input:Output: 3:4
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Voltage - Load: 4.5V ~ 28V
Rds On (Typ): 3.5mOhm, 11mOhm
Output Configuration: High Side
Operating Temperature: -40°C ~ 150°C (TJ)
Switch Type: General Purpose
Interface: SPI
Number of Outputs: 4
Mounting Type: Surface Mount
Output Type: N-Channel
Package / Case: 36-BSSOP (0.295", 7.50mm Width)
Features: Auto Restart, Slew Rate Controlled
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AUIRGF65A40D0 AUIRGF65A40D0 Infineon Technologies fundamentals-of-power-semiconductors Description: DISCRETES
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Supplier Device Package: TO-247AD
Part Status: Discontinued at Digi-Key
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67+8.06 EUR
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IR3570BMTRPBF IR3570BMTRPBF Infineon Technologies pb-ir3564b.pdf?fileId=5546d462533600a4015356800b3728e2 Description: IC REG CTRLR INTEL 2OUT 40QFN
Supplier Device Package: 40-QFN (5x5)
Applications: Controller, Intel VR12, VR12.5, AMD SVI1, SVI2
Operating Temperature: -40°C ~ 85°C
Voltage - Input: 3.3V
Number of Outputs: 2
Mounting Type: Surface Mount
Package / Case: 40-VFQFN Exposed Pad
Packaging: Cut Tape (CT)
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100+7.79 EUR
250+7.43 EUR
500+7.2 EUR
1000+7.02 EUR
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IR3570AMCP01TRP IR3570AMCP01TRP Infineon Technologies IR3564A_70A_PB_v3.04_10-1-13.pdf Description: IC REG CTRLR INTEL 2OUT 40VQFN
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BSM150GT120DN2BOSA1
Hersteller: Infineon Technologies
Description: IGBT MODULE 1200V
Packaging: Tray
Part Status: Last Time Buy
Produkt ist nicht verfügbar
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FP35R12KT4B11BOSA1 Infineon-FP35R12KT4_B11-DS-v03_00-en_de.pdf?fileId=db3a30431689f4420116c457e537082f
FP35R12KT4B11BOSA1
Hersteller: Infineon Technologies
Description: IGBT MOD 1200V 35A 210W MOD
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 35A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 35 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 210 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 2 nF @ 25 V
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ESD204B102ELSE6327XTSA1 ESD204-B1-02.pdf
ESD204B102ELSE6327XTSA1
Hersteller: Infineon Technologies
Description: TVS DIODE 14VWM 28V PGTSSLP23
Power Line Protection: No
Voltage - Clamping (Max) @ Ipp: 28V
Voltage - Breakdown (Min): 8.5V
Bidirectional Channels: 1
Supplier Device Package: PG-TSSLP-2-3
Voltage - Reverse Standoff (Typ): 14V (Max)
Current - Peak Pulse (10/1000µs): 1A (8/20µs)
Capacitance @ Frequency: 4pF @ 1MHz
Applications: General Purpose
Operating Temperature: -55°C ~ 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: 0201 (0603 Metric)
Packaging: Bulk
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IKW20N65ET7XKSA1 Infineon-IKW20N65ET7-DataSheet-v02_01-EN.pdf?fileId=5546d46272e49d2a017351bea06e57ef
IKW20N65ET7XKSA1
Hersteller: Infineon Technologies
Description: IGBT TRENCH FS 650V 40A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 70 ns
Vce(on) (Max) @ Vge, Ic: 1.65V @ 15V, 20A
Supplier Device Package: PG-TO247-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 16ns/210ns
Switching Energy: 360µJ (on), 360µJ (off)
Test Condition: 400V, 20A, 12Ohm, 15V
Gate Charge: 128 nC
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 60 A
Power - Max: 136 W
Qualification: AEC-Q101
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3+7.66 EUR
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IKW50N65ET7XKSA1 Infineon-IKW50N65ET7-DataSheet-v02_01-EN.pdf?fileId=5546d46272e49d2a017351bed62757f8
IKW50N65ET7XKSA1
Hersteller: Infineon Technologies
Description: IGBT TRENCH FS 650V 50A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 93 ns
Vce(on) (Max) @ Vge, Ic: 1.65V @ 15V, 50A
Supplier Device Package: PG-TO247-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 26ns/350ns
Switching Energy: 1.2mJ (on), 850µJ (off)
Test Condition: 400V, 50A, 9Ohm, 15V
Gate Charge: 290 nC
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 50 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 150 A
Power - Max: 273 W
Qualification: AEC-Q101
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2+11.08 EUR
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BAV70WE6327 INFNS11270-1.pdf?t.download=true&u=5oefqw
BAV70WE6327
Hersteller: Infineon Technologies
Description: HIGH SPEED SWITCHING DIODE
Packaging: Bulk
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 200mA (DC)
Supplier Device Package: SOT-323
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 150 nA @ 70 V
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BAV70WH6433 INFNS11270-1.pdf?t.download=true&u=5oefqw
BAV70WH6433
Hersteller: Infineon Technologies
Description: DIODE ARRAY GP 80V 200MA SOT323
Packaging: Bulk
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 200mA (DC)
Supplier Device Package: SOT-323
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 150 nA @ 70 V
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BAV 70W H6327 INFNS11270-1.pdf?t.download=true&u=5oefqw
BAV 70W H6327
Hersteller: Infineon Technologies
Description: DIODE ARRAY GP 80V 200MA SOT323
Packaging: Bulk
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 200mA (DC)
Supplier Device Package: SOT-323
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 150 nA @ 70 V
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6632+0.095 EUR
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BSZ900N15NS3GATMA1 BSZ900N15NS3+Rev2.1.pdf?folderId=db3a304326623792012669f6bee2224b&fileId=db3a304326623792012669f7decc224c
BSZ900N15NS3GATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 150V 13A 8TSDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
Rds On (Max) @ Id, Vgs: 90mOhm @ 10A, 10V
Power Dissipation (Max): 38W (Tc)
Vgs(th) (Max) @ Id: 4V @ 20µA
Supplier Device Package: PG-TSDSON-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 510 pF @ 75 V
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9+2.45 EUR
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100+1.01 EUR
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BCR133E6393 Infineon-TLV4961-3M-DS-v01_00-EN.pdf?fileId=5546d46253f650570154529f327d6fdf
BCR133E6393
Hersteller: Infineon Technologies
Description: SMALL SIGNAL BIPOLAR TRANSISTOR
Resistor - Emitter Base (R2): 10 kOhms
Resistor - Base (R1): 10 kOhms
Frequency - Transition: 130 MHz
Power - Max: 200 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Active
Supplier Device Package: PG-SOT23-3-3
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Transistor Type: NPN - Pre-Biased
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Bulk
Produkt ist nicht verfügbar
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BCR133TE6327 INFNS11633-1.pdf?t.download=true&u=5oefqw
BCR133TE6327
Hersteller: Infineon Technologies
Description: BIPOLAR DIGITAL TRANSISTOR
Packaging: Bulk
Resistor - Base (R1): 10 kOhms
Frequency - Transition: 130 MHz
Power - Max: 200 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Active
Supplier Device Package: PG-SOT23-3-11
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Transistor Type: NPN - Pre-Biased
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Resistor - Emitter Base (R2): 10 kOhms
Produkt ist nicht verfügbar
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ICE2A165IN Infineon-ICE2XXX-DS-v02_10-en.pdf?fileId=db3a304412b407950112b418cbe626ac
ICE2A165IN
Hersteller: Infineon Technologies
Description: IC OFFLINE SWITCH FLYBACK 8DIP
Power (Watts): 31 W
Part Status: Active
Control Features: Soft Start
Voltage - Start Up: 13.5 V
Fault Protection: Current Limiting, Open Loop, Over Load, Over Temperature, Over Voltage
Supplier Device Package: PG-DIP-8
Voltage - Supply (Vcc/Vdd): 6.5V ~ 21V
Topology: Flyback
Output Isolation: Isolated
Voltage - Breakdown: 650V
Internal Switch(s): Yes
Frequency - Switching: 100kHz
Duty Cycle: 72%
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: 8-DIP (0.300", 7.62mm)
Packaging: Bulk
Produkt ist nicht verfügbar
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TLE4267GM Infineon-TLE4267-DS-v02_51-EN.pdf?fileId=5546d46259d9a4bf0159f967db593e49
TLE4267GM
Hersteller: Infineon Technologies
Description: IC REG LIN FIXED POS LDO REG 5V
Current - Supply (Max): 80 mA
Protection Features: Over Temperature, Over Voltage, Reverse Polarity, Short Circuit, Transient Voltage
Voltage Dropout (Max): 0.6V @ 400mA
PSRR: 54dB (100Hz)
Part Status: Active
Control Features: Inhibit, Reset
Voltage - Output (Min/Fixed): 5V
Supplier Device Package: PG-DSO-14
Number of Regulators: 1
Voltage - Input (Max): 40V
Current - Quiescent (Iq): 4 mA
Output Configuration: Positive
Operating Temperature: -40°C ~ 150°C (TJ)
Current - Output: 400mA
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Packaging: Bulk
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BAT15-099E6327 INFNS15420-1.pdf?t.download=true&u=5oefqw
BAT15-099E6327
Hersteller: Infineon Technologies
Description: DIODE SCHOTTKY 4V 100MW SOT1434
Power Dissipation (Max): 100 mW
Current - Max: 110 mA
Part Status: Active
Supplier Device Package: PG-SOT143-4
Voltage - Peak Reverse (Max): 4V
Resistance @ If, F: 5.5Ohm @ 50mA, 1MHz
Capacitance @ Vr, F: 0.5pF @ 0V, 1MHz
Operating Temperature: 150°C (TJ)
Diode Type: Schottky - 2 Independent
Package / Case: TO-253-4, TO-253AA
Packaging: Bulk
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BCW60FFE6327 INFNS11039-1.pdf?t.download=true&u=5oefqw
BCW60FFE6327
Hersteller: Infineon Technologies
Description: BCW60 - LOW NOISE TRANSISTOR
Power - Max: 330 mW
Voltage - Collector Emitter Breakdown (Max): 32 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Active
Supplier Device Package: PG-SOT23
Frequency - Transition: 250MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 2mA, 5V
Current - Collector Cutoff (Max): 20nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 550mV @ 1.25mA, 50mA
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Bulk
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BF1005SE6327HTSA1 BF1005S_Series.pdf
BF1005SE6327HTSA1
Hersteller: Infineon Technologies
Description: RF MOSFET 5V SOT143
Gain: 22dB
Configuration: N-Channel
Frequency: 800MHz
Mounting Type: Surface Mount
Current Rating (Amps): 25mA
Package / Case: TO-253-4, TO-253AA
Packaging: Bulk
Voltage - Test: 5 V
Voltage - Rated: 8 V
Part Status: Obsolete
Supplier Device Package: PG-SOT-143-3D
Noise Figure: 1.6dB
Technology: MOSFET (Metal Oxide)
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BF1005SE6327 INFNS10758-1.pdf?t.download=true&u=5oefqw
BF1005SE6327
Hersteller: Infineon Technologies
Description: RF N-CHANNEL MOSFET
Voltage - Test: 5 V
Voltage - Rated: 8 V
Part Status: Active
Supplier Device Package: SOT143 (SC-61)
Noise Figure: 1.6dB
Technology: MOSFET
Gain: 22dB
Configuration: N-Channel
Frequency: 1GHz
Current Rating (Amps): 800µA
Package / Case: TO-253-4, TO-253AA
Packaging: Bulk
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BF1005E6327HTSA1 BF1005.pdf
BF1005E6327HTSA1
Hersteller: Infineon Technologies
Description: RF MOSFET 5V SOT143
Voltage - Rated: 8 V
Part Status: Obsolete
Supplier Device Package: PG-SOT-143-3D
Noise Figure: 1.6dB
Technology: MOSFET (Metal Oxide)
Gain: 19dB
Configuration: N-Channel
Frequency: 800MHz
Voltage - Test: 5 V
Mounting Type: Surface Mount
Current Rating (Amps): 25mA
Package / Case: TO-253-4, TO-253AA
Packaging: Bulk
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2968+0.2 EUR
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CG7297AM
Hersteller: Infineon Technologies
Description: IC MCU CAPSENSE 32QFN
Packaging: Tray
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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IPP06CN10LG INFNS17009-1.pdf?t.download=true&u=5oefqw
IPP06CN10LG
Hersteller: Infineon Technologies
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 6.2mOhm @ 100A, 10V
Power Dissipation (Max): 214W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 180µA
Supplier Device Package: PG-TO220-3-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 124 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11900 pF @ 50 V
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208+2.81 EUR
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IPP05CN10L G IPP05CN10L.pdf
IPP05CN10L G
Hersteller: Infineon Technologies
Description: MOSFET N-CH 100V 100A TO220-3
Produkt ist nicht verfügbar
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FF450R07ME4BOSA1 Infineon-FF450R07ME4-DataSheet-v03_00-EN.pdf?fileId=5546d4626e651a41016e7e227bfd1087
FF450R07ME4BOSA1
Hersteller: Infineon Technologies
Description: IGBT MOD 650V 450A AG-ECONOD-3
Input: Standard
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Tray
Input Capacitance (Cies) @ Vce: 27.5 nF @ 25 V
Current - Collector Cutoff (Max): 1 mA
Power - Max: 20 mW
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector (Ic) (Max): 450 A
Part Status: Active
IGBT Type: Trench Field Stop
Supplier Device Package: AG-ECONOD-3
NTC Thermistor: Yes
Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 450A
Operating Temperature: -40°C ~ 150°C (TJ)
Configuration: 2 Independent
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1+254.26 EUR
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F4-50R07W2H3_B51 F4-50R07W2H3_B51_Rev2.0_10-29-14.pdf
Hersteller: Infineon Technologies
Description: IGBT MODULE VCES 650V 50A
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DF450R17N2E4PB11BPSA1
Hersteller: Infineon Technologies
Description: IGBT MODULE LOW POWER ECONO
Produkt ist nicht verfügbar
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FF450R06ME3BOSA1 Infineon-FF450R06ME3-DS-v03_02-en_de.pdf?fileId=db3a304318a6cd680118e516f837131a
Hersteller: Infineon Technologies
Description: IGBT MOD 600V 550A 1250W
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FF450R17ME4B11BOSA1 Infineon-FF450R17ME4_B11-DS-v03_01-en_de.pdf?fileId=db3a30432fbc32ee012fc06716403a90
FF450R17ME4B11BOSA1
Hersteller: Infineon Technologies
Description: IGBT MOD 1700V 600A 2500W
Input Capacitance (Cies) @ Vce: 36 nF @ 25 V
Current - Collector Cutoff (Max): 3 mA
Power - Max: 2500 W
Voltage - Collector Emitter Breakdown (Max): 1700 V
Current - Collector (Ic) (Max): 600 A
Part Status: Discontinued at Digi-Key
IGBT Type: Trench Field Stop
Supplier Device Package: Module
NTC Thermistor: Yes
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 450A
Operating Temperature: -40°C ~ 150°C
Configuration: 2 Independent
Input: Standard
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Bulk
Produkt ist nicht verfügbar
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FF450R33T3E3B5P2BPSA1 Infineon-FF450R33T3E3_B5-DS-v03_00-EN.pdf?fileId=5546d46267c74c9a01683cd2886064d9
FF450R33T3E3B5P2BPSA1
Hersteller: Infineon Technologies
Description: IGBT MOD 3300V 450A AG-XHP100-6
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: 2 Independent
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.75V @ 15V, 450A
NTC Thermistor: No
Supplier Device Package: AG-XHP100-6
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 450 A
Voltage - Collector Emitter Breakdown (Max): 3300 V
Power - Max: 1000000 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 84 nF @ 25 V
Produkt ist nicht verfügbar
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FF450R33T3E3B5P3BPSA1 Infineon-FF450R33T3E3_B5-DS-v03_00-EN.pdf?fileId=5546d46267c74c9a01683cd2886064d9
Hersteller: Infineon Technologies
Description: IGBT MOD 3300V 450A AG-XHP100-6
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: 2 Independent
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.75V @ 15V, 450A
NTC Thermistor: No
Supplier Device Package: AG-XHP100-6
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 450 A
Voltage - Collector Emitter Breakdown (Max): 3300 V
Power - Max: 1000000 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 84 nF @ 25 V
Produkt ist nicht verfügbar
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FF450R33T3E3B5P4BPMA1 Infineon-FF450R33T3E3_B5-DS-v03_00-EN.pdf?fileId=5546d46267c74c9a01683cd2886064d9
Hersteller: Infineon Technologies
Description: IGBT MOD 3300V 450A AG-XHP100-6
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: 2 Independent
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.75V @ 15V, 450A
NTC Thermistor: No
Supplier Device Package: AG-XHP100-6
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 450 A
Voltage - Collector Emitter Breakdown (Max): 3300 V
Power - Max: 1000000 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 84 nF @ 25 V
Produkt ist nicht verfügbar
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FF450R33T3E3B5P6BPMA1 Infineon-FF450R33T3E3_B5-DS-v03_00-EN.pdf?fileId=5546d46267c74c9a01683cd2886064d9
Hersteller: Infineon Technologies
Description: IGBT MOD 3300V 450A AG-XHP100-6
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: 2 Independent
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.75V @ 15V, 450A
NTC Thermistor: No
Supplier Device Package: AG-XHP100-6
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 450 A
Voltage - Collector Emitter Breakdown (Max): 3300 V
Power - Max: 1000000 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 84 nF @ 25 V
Produkt ist nicht verfügbar
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F450R12KS4B11BOSA1 Infineon-F4_50R12KS4_B11-DS-v02_00-en_de.pdf?fileId=db3a3043345a30bc01346aa2466e1366
F450R12KS4B11BOSA1
Hersteller: Infineon Technologies
Description: IGBT MOD 1200V 70A 355W MOD
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 125°C
Vce(on) (Max) @ Vge, Ic: 3.75V @ 15V, 50A
NTC Thermistor: Yes
Supplier Device Package: Module
Part Status: Discontinued at Digi-Key
Current - Collector (Ic) (Max): 70 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 355 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 3.4 nF @ 25 V
auf Bestellung 26 Stücke:
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AnzahlPrivatkunde
3+193.02 EUR
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TLS805B1LDV50XUMA1 Infineon-TLS805B1LD%20V50-DS-v01_10-EN.pdf?fileId=5546d46258fc0bc1015969ed62f84247
TLS805B1LDV50XUMA1
Hersteller: Infineon Technologies
Description: IC REG LINEAR 5V 50MA PG-TSON-10
Supplier Device Package: PG-TSON-10
Number of Regulators: 1
Voltage - Input (Max): 42V
Current - Quiescent (Iq): 8 µA
Output Configuration: Positive
Operating Temperature: -40°C ~ 150°C (TJ)
Current - Output: 50mA
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: 10-TFDFN Exposed Pad
Packaging: Cut Tape (CT)
Qualification: AEC-Q100
Grade: Automotive
Current - Supply (Max): 12 µA
Protection Features: Over Current, Over Temperature
Voltage Dropout (Max): 0.35V @ 50mA
PSRR: 55dB (100Hz)
Control Features: Enable
Voltage - Output (Min/Fixed): 5V
auf Bestellung 14945 Stücke:
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9+2.57 EUR
12+1.87 EUR
25+1.69 EUR
100+1.5 EUR
250+1.4 EUR
500+1.34 EUR
1000+1.3 EUR
2500+1.25 EUR
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TLS805B1LDVBOARDTOBO1 Infineon-Z8F55443029_TLS805x1LD-TLS810x1LD-Demoboard-UserManual-v01_00-EN.pdf?fileId=5546d46259d9a4bf015a46f9d9c8037f
TLS805B1LDVBOARDTOBO1
Hersteller: Infineon Technologies
Description: EVAL BOARD FOR TLS805B1LDV
Packaging: Box
Channels per IC: 1 - Single
Utilized IC / Part: TLS805B1LDV
Regulator Type: Positive Adjustable
Contents: Board(s)
Current - Output: 50mA
Voltage - Input: 3V ~ 42V
Produkt ist nicht verfügbar
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SPD18P06PG Infineon-SPD18P06P-DS-v03_04-en.pdf?fileId=db3a30431ed1d7b2011f404c85eb4ee3
SPD18P06PG
Hersteller: Infineon Technologies
Description: SPD18P06 - 20V-250V P-CHANNEL PO
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 18.6A (Tc)
Rds On (Max) @ Id, Vgs: 130mOhm @ 13.2A, 10V
Power Dissipation (Max): 80W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: PG-TO252-3-11
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 860 pF @ 25 V
Produkt ist nicht verfügbar
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IPI320N203G Infineon-IPP_B_I_320N20N3G-DS-v02_03-en.pdf?fileId=db3a3043243b5f170124967064ba184a
IPI320N203G
Hersteller: Infineon Technologies
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 34A (Tc)
Rds On (Max) @ Id, Vgs: 32mOhm @ 34A, 10V
Power Dissipation (Max): 136W (Tc)
Vgs(th) (Max) @ Id: 4V @ 90µA
Supplier Device Package: PG-TO262-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2350 pF @ 100 V
auf Bestellung 350 Stücke:
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AnzahlPrivatkunde
161+3.71 EUR
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BTS426L1E3062ABUMA1 BTS426L1.pdf
BTS426L1E3062ABUMA1
Hersteller: Infineon Technologies
Description: IC PWR SWITCH N-CHAN 1:1 TO263-5
Features: Auto Restart
Packaging: Cut Tape (CT)
Package / Case: TO-263-5, D2PAK (4 Leads + Tab), TO-263BB
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 50mOhm
Input Type: Non-Inverting
Voltage - Load: 5V ~ 34V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 5.8A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-TO263-5-2
Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, Over Voltage, UVLO
Part Status: Not For New Designs
auf Bestellung 616 Stücke:
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3+8.68 EUR
10+6.59 EUR
25+6.08 EUR
100+5.51 EUR
250+5.24 EUR
500+5.07 EUR
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IPB45N06S409ATMA2 IPx45N06S4-09.pdf
IPB45N06S409ATMA2
Hersteller: Infineon Technologies
Description: MOSFET N-CH 60V 45A TO263-3
Produkt ist nicht verfügbar
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IPP45N06S409AKSA2 IPx45N06S4-09.pdf
IPP45N06S409AKSA2
Hersteller: Infineon Technologies
Description: MOSFET N-CH 60V 45A TO220-3
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
Rds On (Max) @ Id, Vgs: 9.4mOhm @ 45A, 10V
Power Dissipation (Max): 71W (Tc)
Vgs(th) (Max) @ Id: 4V @ 34µA
Supplier Device Package: PG-TO220-3-1
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3785 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 27000 Stücke:
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AnzahlPrivatkunde
267+2.01 EUR
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TLD5190QVXUMA1 Infineon-TLD5190QV-DS-v01_10-EN.pdf?fileId=5546d462625a528f0162af122f3300b8
TLD5190QVXUMA1
Hersteller: Infineon Technologies
Description: IC LED DRIVER CTRLR PWM 48VQFN
Part Status: Active
Voltage - Supply (Max): 40V
Voltage - Supply (Min): 4.5V
Dimming: Analog, PWM
Supplier Device Package: PG-VQFN-48-31
Topology: Step-Down (Buck), Step-Up (Boost)
Internal Switch(s): No
Operating Temperature: -40°C ~ 150°C (TJ)
Type: DC DC Controller
Frequency: 200kHz ~ 700kHz
Number of Outputs: 1
Mounting Type: Surface Mount
Voltage - Output: 55V
Package / Case: 48-VFQFN Exposed Pad
Packaging: Tape & Reel (TR)
Grade: Automotive
Produkt ist nicht verfügbar
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TLD5190QVXUMA1 Infineon-TLD5190QV-DS-v01_10-EN.pdf?fileId=5546d462625a528f0162af122f3300b8
TLD5190QVXUMA1
Hersteller: Infineon Technologies
Description: IC LED DRIVER CTRLR PWM 48VQFN
Part Status: Active
Voltage - Supply (Max): 40V
Voltage - Supply (Min): 4.5V
Dimming: Analog, PWM
Supplier Device Package: PG-VQFN-48-31
Topology: Step-Down (Buck), Step-Up (Boost)
Internal Switch(s): No
Operating Temperature: -40°C ~ 150°C (TJ)
Type: DC DC Controller
Frequency: 200kHz ~ 700kHz
Number of Outputs: 1
Mounting Type: Surface Mount
Voltage - Output: 55V
Package / Case: 48-VFQFN Exposed Pad
Packaging: Cut Tape (CT)
Grade: Automotive
auf Bestellung 4815 Stücke:
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AnzahlPrivatkunde
4+6.14 EUR
10+4.59 EUR
25+4.21 EUR
100+3.78 EUR
250+3.58 EUR
500+3.46 EUR
1000+3.36 EUR
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IPL60R104C7AUMA1 Infineon-IPL60R104C7-DS-v02_00-EN.pdf?fileId=5546d462518ffd850151b46442265987
IPL60R104C7AUMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 600V 20A 4VSON
Packaging: Tape & Reel (TR)
Package / Case: 4-PowerTSFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 104mOhm @ 9.7A, 10V
Power Dissipation (Max): 122W (Tc)
Vgs(th) (Max) @ Id: 4V @ 490µA
Supplier Device Package: PG-VSON-4
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1819 pF @ 400 V
Produkt ist nicht verfügbar
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IPL60R104C7AUMA1 Infineon-IPL60R104C7-DS-v02_00-EN.pdf?fileId=5546d462518ffd850151b46442265987
IPL60R104C7AUMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 600V 20A 4VSON
Packaging: Cut Tape (CT)
Package / Case: 4-PowerTSFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 104mOhm @ 9.7A, 10V
Power Dissipation (Max): 122W (Tc)
Vgs(th) (Max) @ Id: 4V @ 490µA
Supplier Device Package: PG-VSON-4
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1819 pF @ 400 V
auf Bestellung 73 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2+12.26 EUR
10+8.22 EUR
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IRS2106STRPBF INFN-S-A0002363322-1.pdf?t.download=true&u=5oefqw
IRS2106STRPBF
Hersteller: Infineon Technologies
Description: IC GATE DRVR HI/LOW SIDE 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 100ns, 35ns
Channel Type: Independent
Driven Configuration: High-Side, Low-Side
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Current - Peak Output (Source, Sink): 290mA, 600mA
Part Status: Active
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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IRS2106STRPBF INFN-S-A0002363322-1.pdf?t.download=true&u=5oefqw
IRS2106STRPBF
Hersteller: Infineon Technologies
Description: IC GATE DRVR HI/LOW SIDE 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 100ns, 35ns
Channel Type: Independent
Driven Configuration: High-Side, Low-Side
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Current - Peak Output (Source, Sink): 290mA, 600mA
Part Status: Active
DigiKey Programmable: Not Verified
auf Bestellung 61 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
10+2.2 EUR
14+1.59 EUR
25+1.44 EUR
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SIDC42D120H6X1SA3 SIDC42D120H6.pdf
Hersteller: Infineon Technologies
Description: DIODE GP 1.2KV 75A WAFER
Current - Reverse Leakage @ Vr: 27 µA @ 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 75 A
Voltage - DC Reverse (Vr) (Max): 1200 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Sawn on foil
Current - Average Rectified (Io): 75A
Technology: Standard
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: Die
Packaging: Bulk
Produkt ist nicht verfügbar
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SIDC42D170E6X1SA2 SIDC42D170E6_L4241M.pdf?folderId=db3a304412b407950112b439a4c16e69&fileId=db3a304412b407950112b439a54e6e6a
Hersteller: Infineon Technologies
Description: DIODE GP 1.7KV 50A WAFER
Package / Case: Die
Packaging: Bulk
Current - Reverse Leakage @ Vr: 27 µA @ 1700 V
Voltage - Forward (Vf) (Max) @ If: 2.15 V @ 50 A
Voltage - DC Reverse (Vr) (Max): 1700 V
Part Status: Discontinued at Digi-Key
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: Sawn on foil
Current - Average Rectified (Io): 50A
Technology: Standard
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Produkt ist nicht verfügbar
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SIDC46D170HX1SA2 fundamentals-of-power-semiconductors
SIDC46D170HX1SA2
Hersteller: Infineon Technologies
Description: DIODE STD 1700V 75A SAWN ON FOIL
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 75A
Supplier Device Package: Sawn on foil
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1700 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 75 A
Current - Reverse Leakage @ Vr: 27 µA @ 1700 V
Produkt ist nicht verfügbar
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XMC7201SCQ024XABXUMA1
Hersteller: Infineon Technologies
Description: XMC1000
Produkt ist nicht verfügbar
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F4150R12KS4BOSA1 Infineon-F4_150R12KS4-DS-v02_01-en_de.pdf?fileId=db3a304412b407950112b4327c115855
F4150R12KS4BOSA1
Hersteller: Infineon Technologies
Description: IGBT MOD 1200V 180A 960W
Input Capacitance (Cies) @ Vce: 10 nF @ 25 V
Current - Collector Cutoff (Max): 5 mA
Power - Max: 960 W
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 180 A
Part Status: Active
Supplier Device Package: Module
NTC Thermistor: Yes
Vce(on) (Max) @ Vge, Ic: 3.75V @ 15V, 150A
Operating Temperature: -40°C ~ 125°C
Configuration: Three Phase Inverter
Input: Standard
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Bulk
auf Bestellung 10 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1+229.5 EUR
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TLE9250SJXUMA1 Infineon-TLE9250-DS-v01_00-EN.pdf?fileId=5546d4625debb399015e14afa3f45977
TLE9250SJXUMA1
Hersteller: Infineon Technologies
Description: IC TRANSCEIVER 1/1 PGDSO8
Qualification: AEC-Q100
Grade: Automotive
Part Status: Not For New Designs
Receiver Hysteresis: 100 mV
Supplier Device Package: PG-DSO-8
Protocol: CANbus
Data Rate: 5Mbps
Number of Drivers/Receivers: 1/1
Voltage - Supply: 4.5V ~ 5.5V
Operating Temperature: -40°C ~ 150°C (TJ)
Type: Transceiver
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
auf Bestellung 15000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2500+1.29 EUR
Mindestbestellmenge: 2500 Stücke
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TLE9250SJXUMA1 Infineon-TLE9250-DS-v01_00-EN.pdf?fileId=5546d4625debb399015e14afa3f45977
TLE9250SJXUMA1
Hersteller: Infineon Technologies
Description: IC TRANSCEIVER 1/1 PGDSO8
Qualification: AEC-Q100
Grade: Automotive
Part Status: Not For New Designs
Receiver Hysteresis: 100 mV
Supplier Device Package: PG-DSO-8
Protocol: CANbus
Data Rate: 5Mbps
Number of Drivers/Receivers: 1/1
Voltage - Supply: 4.5V ~ 5.5V
Operating Temperature: -40°C ~ 150°C (TJ)
Type: Transceiver
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
auf Bestellung 16753 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
8+2.89 EUR
10+2.12 EUR
25+1.92 EUR
100+1.7 EUR
250+1.61 EUR
500+1.55 EUR
1000+1.5 EUR
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TLE9261BQXV33XUMA1 Infineon-TLE9261BQX%20V33-DS-v01_00-EN.pdf?fileId=5546d462602a9dc801609757fc5a3927
TLE9261BQXV33XUMA1
Hersteller: Infineon Technologies
Description: IC INTERFACE SPECIALIZED 48VQFN
Part Status: Not For New Designs
Supplier Device Package: PG-VQFN-48-31
Voltage - Supply: 28V
Interface: SPI
Mounting Type: Surface Mount
Package / Case: 48-VFQFN Exposed Pad
Packaging: Tape & Reel (TR)
Grade: Automotive
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2500+3.5 EUR
Mindestbestellmenge: 2500 Stücke
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TLE9261BQXV33XUMA1 Infineon-TLE9261BQX%20V33-DS-v01_00-EN.pdf?fileId=5546d462602a9dc801609757fc5a3927
TLE9261BQXV33XUMA1
Hersteller: Infineon Technologies
Description: IC INTERFACE SPECIALIZED 48VQFN
Voltage - Supply: 28V
Interface: SPI
Mounting Type: Surface Mount
Package / Case: 48-VFQFN Exposed Pad
Packaging: Cut Tape (CT)
Grade: Automotive
Part Status: Not For New Designs
Supplier Device Package: PG-VQFN-48-31
auf Bestellung 4269 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
4+6.5 EUR
10+4.89 EUR
25+4.5 EUR
100+4.06 EUR
250+3.84 EUR
500+3.71 EUR
1000+3.62 EUR
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TLE92633BQXV33XUMA1 Infineon-TLE9263-3BQX%20V33-DS-v01_00-EN.pdf?fileId=5546d462602a9dc801609805d7dc3987
TLE92633BQXV33XUMA1
Hersteller: Infineon Technologies
Description: IC INTERFACE SPECIALIZED 48VQFN
Grade: Automotive
Supplier Device Package: PG-VQFN-48-31
Voltage - Supply: 28V
Interface: SPI
Mounting Type: Surface Mount
Package / Case: 48-VFQFN Exposed Pad
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
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TLE6255G
Hersteller: Infineon Technologies
Description: IC TRANSCEIVER FULL 1/1 DSO-14
Packaging: Bulk
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Type: Transceiver
Operating Temperature: -40°C ~ 150°C
Voltage - Supply: 4.75V ~ 5.25V
Number of Drivers/Receivers: 1/1
Data Rate: 33Kbps
Protocol: CANbus
Supplier Device Package: PG-DSO-14-9
Receiver Hysteresis: 200 mV
Duplex: Full
Part Status: Active
auf Bestellung 4 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
4+135.18 EUR
Mindestbestellmenge: 4 Stücke
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BTS61101SJAXUMA1 Infineon-BTS6110-1SJA-DS-v01_01-EN.pdf?fileId=5546d4625a888733015aa3e344b71032
BTS61101SJAXUMA1
Hersteller: Infineon Technologies
Description: IC PWR SWITCH N-CHAN 1:1 DSO-8
Output Type: N-Channel
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Packaging: Bulk
Output Configuration: High Side
Operating Temperature: -40°C ~ 150°C (TJ)
Switch Type: General Purpose
Interface: On/Off
Number of Outputs: 1
Mounting Type: Surface Mount
Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage
Supplier Device Package: PG-DSO-8-27
Ratio - Input:Output: 1:1
Current - Output (Max): 20A
Voltage - Supply (Vcc/Vdd): Not Required
Voltage - Load: 9V ~ 16V
Rds On (Typ): 80mOhm
auf Bestellung 57500 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
392+1.5 EUR
Mindestbestellmenge: 392 Stücke
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BTS6480SF INFNS15568-1.pdf?t.download=true&u=5oefqw
Hersteller: Infineon Technologies
Description: SPOC SPI POWER CONTROLLER
Packaging: Bulk
Part Status: Active
Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage, Reverse Battery, Short Circuit
Supplier Device Package: PG-DSO-36-43
Ratio - Input:Output: 3:4
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Voltage - Load: 4.5V ~ 28V
Rds On (Typ): 3.5mOhm, 11mOhm
Output Configuration: High Side
Operating Temperature: -40°C ~ 150°C (TJ)
Switch Type: General Purpose
Interface: SPI
Number of Outputs: 4
Mounting Type: Surface Mount
Output Type: N-Channel
Package / Case: 36-BSSOP (0.295", 7.50mm Width)
Features: Auto Restart, Slew Rate Controlled
auf Bestellung 2000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
62+9.35 EUR
Mindestbestellmenge: 62 Stücke
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AUIRGF65A40D0 fundamentals-of-power-semiconductors
AUIRGF65A40D0
Hersteller: Infineon Technologies
Description: DISCRETES
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Supplier Device Package: TO-247AD
Part Status: Discontinued at Digi-Key
auf Bestellung 250 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
67+8.06 EUR
Mindestbestellmenge: 67 Stücke
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IR3570BMTRPBF pb-ir3564b.pdf?fileId=5546d462533600a4015356800b3728e2
IR3570BMTRPBF
Hersteller: Infineon Technologies
Description: IC REG CTRLR INTEL 2OUT 40QFN
Supplier Device Package: 40-QFN (5x5)
Applications: Controller, Intel VR12, VR12.5, AMD SVI1, SVI2
Operating Temperature: -40°C ~ 85°C
Voltage - Input: 3.3V
Number of Outputs: 2
Mounting Type: Surface Mount
Package / Case: 40-VFQFN Exposed Pad
Packaging: Cut Tape (CT)
auf Bestellung 7932 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2+12.09 EUR
10+9.27 EUR
25+8.57 EUR
100+7.79 EUR
250+7.43 EUR
500+7.2 EUR
1000+7.02 EUR
Mindestbestellmenge: 2 Stücke
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IR3570AMCP01TRP IR3564A_70A_PB_v3.04_10-1-13.pdf
IR3570AMCP01TRP
Hersteller: Infineon Technologies
Description: IC REG CTRLR INTEL 2OUT 40VQFN
Produkt ist nicht verfügbar
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