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BFP640FESDH6327XTSA1 BFP640FESDH6327XTSA1 Infineon Technologies Infineon-BFP540ESD-DS-v02_00-EN.pdf?fileId=5546d462689a790c01690f0382ea3920 Description: RF TRANS NPN 4.7V 46GHZ 4-TSFP
Packaging: Cut Tape (CT)
Package / Case: 4-SMD, Flat Leads
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 8B ~ 30.5dB
Power - Max: 200mW
Current - Collector (Ic) (Max): 50mA
Voltage - Collector Emitter Breakdown (Max): 4.7V
DC Current Gain (hFE) (Min) @ Ic, Vce: 110 @ 30mA, 3V
Frequency - Transition: 46GHz
Noise Figure (dB Typ @ f): 0.55dB ~ 1.7dB @ 150MHz ~ 10GHz
Supplier Device Package: 4-TSFP
Part Status: Active
auf Bestellung 667 Stücke:
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24+0.76 EUR
33+0.54 EUR
37+0.48 EUR
100+0.42 EUR
250+0.39 EUR
500+0.37 EUR
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BFP620E7764 BFP620E7764 Infineon Technologies INFNS10686-1.pdf?t.download=true&u=5oefqw Description: RF BIPOLAR TRANSISTOR
Packaging: Bulk
Package / Case: SC-82A, SOT-343
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 21.5dB
Power - Max: 185mW
Current - Collector (Ic) (Max): 80mA
Voltage - Collector Emitter Breakdown (Max): 2.8V
DC Current Gain (hFE) (Min) @ Ic, Vce: 110 @ 50mA, 1.5V
Frequency - Transition: 65GHz
Noise Figure (dB Typ @ f): 0.7dB ~ 1.3dB @ 1.8GHz ~ 6GHz
Supplier Device Package: PG-SOT343-4
Part Status: Active
Produkt ist nicht verfügbar
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IRF5210STRRPBF IRF5210STRRPBF Infineon Technologies irf5210spbf.pdf?fileId=5546d462533600a4015355e35f77198e Description: MOSFET P-CH 100V 38A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 38A (Tc)
Rds On (Max) @ Id, Vgs: 60mOhm @ 38A, 10V
Power Dissipation (Max): 3.1W (Ta), 170W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 230 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2780 pF @ 25 V
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IRF5210STRRPBF IRF5210STRRPBF Infineon Technologies irf5210spbf.pdf?fileId=5546d462533600a4015355e35f77198e Description: MOSFET P-CH 100V 38A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 38A (Tc)
Rds On (Max) @ Id, Vgs: 60mOhm @ 38A, 10V
Power Dissipation (Max): 3.1W (Ta), 170W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 230 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2780 pF @ 25 V
Produkt ist nicht verfügbar
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SPP11N65C3HKSA1 Infineon Technologies SP%28P%2CA%2CI%2911N65C3.pdf Description: MOSFET N-CH 650V 11A TO-220
Packaging: Tube
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Part Status: Active
Produkt ist nicht verfügbar
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PBL3766/1NS Infineon Technologies ERICS00253-1.pdf?t.download=true&u=5oefqw Description: BIPOLAR SLIC
Packaging: Bulk
Package / Case: 22-DIP
Mounting Type: Through Hole
Function: Subscriber Line Interface Concept (SLIC)
Interface: 2-Wire
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: -24V ~ -58V
Supplier Device Package: 22-DIP
Part Status: Active
Number of Circuits: 1
auf Bestellung 10200 Stücke:
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IRFHM3911TRPBF IRFHM3911TRPBF Infineon Technologies irfhm3911pbf.pdf?fileId=5546d462533600a40153561ff23f1f2b Description: MOSFET N-CH 100V 3.2A/20A 8PQFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.2A (Ta), 20A (Tc)
Rds On (Max) @ Id, Vgs: 115mOhm @ 6.3A, 10V
Power Dissipation (Max): 2.8W (Ta), 29W (Tc)
Vgs(th) (Max) @ Id: 4V @ 35µA
Supplier Device Package: 8-PQFN (3x3)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 760 pF @ 50 V
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IRFHM3911TRPBF IRFHM3911TRPBF Infineon Technologies irfhm3911pbf.pdf?fileId=5546d462533600a40153561ff23f1f2b Description: MOSFET N-CH 100V 3.2A/20A 8PQFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.2A (Ta), 20A (Tc)
Rds On (Max) @ Id, Vgs: 115mOhm @ 6.3A, 10V
Power Dissipation (Max): 2.8W (Ta), 29W (Tc)
Vgs(th) (Max) @ Id: 4V @ 35µA
Supplier Device Package: 8-PQFN (3x3)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 760 pF @ 50 V
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11+1.64 EUR
18+1.02 EUR
100+0.67 EUR
500+0.52 EUR
1000+0.47 EUR
2000+0.42 EUR
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ICE3B0365JG Infineon Technologies INFN-S-A0003615022-1.pdf?t.download=true&u=5oefqw Description: IC OFFLINE SWITCH FLYBACK 12DSO
Packaging: Bulk
Package / Case: 12-BSOP (0.295", 7.50mm Width) Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -25°C ~ 130°C (TJ)
Duty Cycle: 75%
Frequency - Switching: 67kHz
Internal Switch(s): Yes
Voltage - Breakdown: 650V
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 10.3V ~ 26V
Supplier Device Package: PG-DSO-12
Fault Protection: Current Limiting, Open Loop, Over Load, Over Temperature, Over Voltage
Control Features: Soft Start
Part Status: Active
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ICE3B0365J-T Infineon Technologies INFNS27652-1.pdf?t.download=true&u=5oefqw Description: OFF-LINE SMPS CURRENT MODE CONTR
Packaging: Bulk
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Duty Cycle: 75%
Frequency - Switching: 67kHz
Internal Switch(s): Yes
Voltage - Breakdown: 650V
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 10.3V ~ 26V
Supplier Device Package: PG-DIP-8
Fault Protection: Current Limiting, Over Load, Over Temperature, Over Voltage
Voltage - Start Up: 18 V
Control Features: Soft Start
Part Status: Active
Power (Watts): 22 W
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416+1.11 EUR
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ESD5V3U4RRSH6327XTSA1 ESD5V3U4RRSH6327XTSA1 Infineon Technologies esd5v3u4rrs.pdf?folderId=db3a30431441fb5d011488a9e66f0ded&fileId=db3a30431c69a49d011cad6ae0c10a10 Description: TVS DIODE 5.3VWM 15VC PGSOT363PO
Packaging: Tape & Reel (TR)
Package / Case: 6-VSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Type: Steering (Rail to Rail)
Operating Temperature: -55°C ~ 125°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 0.4pF @ 1MHz
Current - Peak Pulse (10/1000µs): 3A (8/20µs)
Voltage - Reverse Standoff (Typ): 5.3V (Max)
Supplier Device Package: PG-SOT363-PO
Unidirectional Channels: 4
Voltage - Breakdown (Min): 6.3V
Voltage - Clamping (Max) @ Ipp: 15V
Power - Peak Pulse: 50W
Power Line Protection: Yes
Produkt ist nicht verfügbar
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PTFA092201F V1 PTFA092201F V1 Infineon Technologies PTFA092201(E,F).pdf Description: IC FET RF LDMOS 220W H-37260-2
Produkt ist nicht verfügbar
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BSM15GD120DN2E3224BDLA1 Infineon Technologies Description: IGBT MODULE 1200V
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Full Bridge
Operating Temperature: 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 15A
NTC Thermistor: No
Supplier Device Package: Module
Part Status: Last Time Buy
Current - Collector (Ic) (Max): 25 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 145 W
Current - Collector Cutoff (Max): 500 µA
Input Capacitance (Cies) @ Vce: 1 nF @ 25 V
Produkt ist nicht verfügbar
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BSM35GD120DN2 Infineon Technologies BSM35GD120DN2_2006-01-31.pdf Description: IGBT MOD 1200V 50A 280W
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 3.2V @ 15V, 35A
NTC Thermistor: No
Supplier Device Package: Module
IGBT Type: NPT
Current - Collector (Ic) (Max): 50 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 280 W
Input Capacitance (Cies) @ Vce: 2 nF @ 25 V
Produkt ist nicht verfügbar
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IFCM15P60GDXKMA1 IFCM15P60GDXKMA1 Infineon Technologies Infineon-IFCM15P60GD-DS-v02_01-EN.pdf?fileId=5546d4625c167129015c53b92fc97ce2 Description: IFPS MODULE 650V 30A 24PWRDIP
Packaging: Tube
Package / Case: 24-PowerDIP Module (1.028", 26.10mm)
Mounting Type: Through Hole
Type: IGBT
Configuration: 3 Phase Inverter
Voltage - Isolation: 2000Vrms
Current: 30 A
Voltage: 650 V
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1+24.94 EUR
14+17.25 EUR
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BSZ0702LSATMA1 BSZ0702LSATMA1 Infineon Technologies Infineon-BSZ0702LS-DataSheet-v02_01-EN.pdf?fileId=5546d462700c0ae601708b86789613d0 Description: MOSFET N-CH 60V 17A/40A TSDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 20A, 10V
Power Dissipation (Max): 2.1W (Ta), 69W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 36µA
Supplier Device Package: PG-TDSON-8 FL
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 3100 pF @ 30 V
Produkt ist nicht verfügbar
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BCR573E6327 BCR573E6327 Infineon Technologies INFNS10767-1.pdf?t.download=true&u=5oefqw Description: BIPOLAR DIGITAL TRANSISTOR
auf Bestellung 34451 Stücke:
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5505+0.09 EUR
Mindestbestellmenge: 5505
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BCR573 BCR573 Infineon Technologies INFNS17204-1.pdf?t.download=true&u=5oefqw Description: TRANS PREBIAS
Packaging: Bulk
auf Bestellung 9000 Stücke:
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4418+0.12 EUR
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IPC90R120C3X1SA1 Infineon Technologies Description: MOSFET N-CH BARE DIE
Produkt ist nicht verfügbar
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IPC90R1K0C3X1SA1 Infineon Technologies Description: MOSFET N-CH BARE DIE
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IPC90R500C3X1SA1 Infineon Technologies Description: MOSFET N-CH BARE DIE
Produkt ist nicht verfügbar
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IPC90R800C3X1SA1 Infineon Technologies Description: MOSFET N-CH BARE DIE
Packaging: Bulk
Part Status: Obsolete
Produkt ist nicht verfügbar
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IPC95R750P7X7SA1 Infineon Technologies Description: MOSFET N-CH BARE DIE
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IPC95R1K2P7X7SA1 Infineon Technologies Description: MOSFET N-CH BARE DIE
Packaging: Bulk
Part Status: Active
Produkt ist nicht verfügbar
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IRFH5110TRPBF IRFH5110TRPBF Infineon Technologies irfh5110pbf.pdf?fileId=5546d462533600a40153561aec951ea8 Description: MOSFET N-CH 100V 11A/63A 8PQFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 63A (Tc)
Rds On (Max) @ Id, Vgs: 12.4mOhm @ 37A, 10V
Power Dissipation (Max): 3.6W (Ta), 114W (Tc)
Vgs(th) (Max) @ Id: 4V @ 100µA
Supplier Device Package: 8-PQFN (5x6)
Part Status: Last Time Buy
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3152 pF @ 25 V
Produkt ist nicht verfügbar
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IPC100N04S52R8ATMA1 IPC100N04S52R8ATMA1 Infineon Technologies Infineon-IPC100N04S5-2R8-DS-v01_00-EN.pdf?fileId=5546d46258fc0bc101590801b9b92904 Description: MOSFET N-CH 40V 100A 8TDSON-34
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 2.8mOhm @ 50A, 10V
Power Dissipation (Max): 75W (Tc)
Vgs(th) (Max) @ Id: 3.4V @ 30µA
Supplier Device Package: PG-TDSON-8-34
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2600 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 4819 Stücke:
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9+2.16 EUR
12+1.52 EUR
100+1.08 EUR
500+0.92 EUR
1000+0.76 EUR
2000+0.74 EUR
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IPC100N04S5L1R9ATMA1 IPC100N04S5L1R9ATMA1 Infineon Technologies Infineon-IPC100N04S5L-1R9-DS-v01_03-EN.pdf?fileId=5546d46253f65057015419c29ca352fb Description: MOSFET N-CH 40V 100A 8TDSON-34
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 1.9mOhm @ 50A, 10V
Power Dissipation (Max): 100W (Tc)
Vgs(th) (Max) @ Id: 2V @ 50µA
Supplier Device Package: PG-TDSON-8-34
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 81 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4310 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 74418 Stücke:
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6+3.10 EUR
10+1.97 EUR
100+1.33 EUR
500+1.05 EUR
1000+0.96 EUR
2000+0.89 EUR
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BSZ070N08LS5ATMA1 BSZ070N08LS5ATMA1 Infineon Technologies Infineon-BSZ070N08LS5-DS-v02_02-EN.pdf?fileId=5546d4625696ed760156e60d9bc9507d Description: MOSFET N-CH 80V 40A TSDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 20A, 10V
Power Dissipation (Max): 69W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 36µA
Supplier Device Package: PG-TSDSON-8-FL
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2340 pF @ 40 V
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5000+0.95 EUR
Mindestbestellmenge: 5000
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BGA924N6E6327XTSA1 BGA924N6E6327XTSA1 Infineon Technologies BGA924N6.pdf Description: IC AMP GALI 1.559-1.61GHZ TSNP6
Packaging: Bulk
Package / Case: 6-XFDFN
Mounting Type: Surface Mount
Frequency: 1.559GHz ~ 1.61GHz
RF Type: Galileo, GLONASS, GPS
Voltage - Supply: 1.5V ~ 3.3V
Gain: 16.2dB
Current - Supply: 4.85mA
Noise Figure: 0.55dB
P1dB: -8dBm
Test Frequency: 1.55GHz ~ 1.615GHz
Supplier Device Package: TSNP-6-2
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944+0.54 EUR
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IAUC120N04S6L009ATMA1 IAUC120N04S6L009ATMA1 Infineon Technologies Infineon-IAUC120N04S6L009-DataSheet-v01_00-EN.pdf?fileId=5546d4626c1f3dc3016c4c4d087c177b Description: MOSFET N-CH 40V 150A TDSON-8-34
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 150A (Tc)
Rds On (Max) @ Id, Vgs: 960mOhm @ 60A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 2V @ 90µA
Supplier Device Package: PG-TDSON-8-34
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 128 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7806 pF @ 25 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 25
Qualification: AEC-Q101
auf Bestellung 5000 Stücke:
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5000+1.22 EUR
Mindestbestellmenge: 5000
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IAUC120N04S6N010ATMA1 IAUC120N04S6N010ATMA1 Infineon Technologies Infineon-IAUC120N04S6N010-DataSheet-v01_00-EN.pdf?fileId=5546d4626c1f3dc3016c4c43cb2e1748 Description: MOSFET N-CH 40V 150A TDSON-8-34
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 150A (Tc)
Rds On (Max) @ Id, Vgs: 1.03mOhm @ 60A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 3V @ 90µA
Supplier Device Package: PG-TDSON-8-34
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 108 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6878 pF @ 25 V
Qualification: AEC-Q101
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SIPC19N80C3 Infineon Technologies Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Produkt ist nicht verfügbar
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IRFH8325TRPBF IRFH8325TRPBF Infineon Technologies irfh8325pbf.pdf?fileId=5546d462533600a40153561fbc041f1d Description: MOSFET N-CH 30V 21A/82A PQFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 82A (Tc)
Rds On (Max) @ Id, Vgs: 5mOhm @ 20A, 10V
Power Dissipation (Max): 3.6W (Ta), 54W (Tc)
Vgs(th) (Max) @ Id: 2.35V @ 50µA
Supplier Device Package: PQFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2487 pF @ 10 V
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CY22050KFI CY22050KFI Infineon Technologies Infineon-CY22050_CY220501_One-PLL_General-Purpose_Flash-Programmable_Clock_Generator-DataSheet-v16_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec0cb203573&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_inte Description: IC CLOCK GEN PROG 16-TSSOP
Packaging: Tube
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Output: CMOS
Frequency - Max: 150MHz, 166.6MHz
Type: Clock Generator, Fanout Distribution
Input: LVCMOS, LVTTL, Crystal
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2.5V, 3.3V
Ratio - Input:Output: 1:6
Differential - Input:Output: No/No
Supplier Device Package: 16-TSSOP
PLL: Yes with Bypass
Divider/Multiplier: Yes/No
Number of Circuits: 1
DigiKey Programmable: Not Verified
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MB89615RPMC-G-1090-BNDE1 Infineon Technologies Description: IC MCU 8BIT 16KB MROM 64LQFP
Packaging: Tray
Speed: 10MHz
Program Memory Size: 16KB (16K x 8)
RAM Size: 512 x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External
Program Memory Type: Mask ROM
Core Processor: F²MC-8L
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 2.2V ~ 6V
Connectivity: Serial I/O
Peripherals: POR, PWM, WDT
Part Status: Obsolete
Number of I/O: 53
DigiKey Programmable: Not Verified
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MB89615RPMC-G-XXX-BND Infineon Technologies Description: IC MCU 8BIT 16KB MROM 64LQFP
Packaging: Tray
Speed: 10MHz
Program Memory Size: 16KB (16K x 8)
RAM Size: 512 x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External
Program Memory Type: Mask ROM
Core Processor: F²MC-8L
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 2.2V ~ 6V
Connectivity: Serial I/O
Peripherals: POR, PWM, WDT
Part Status: Obsolete
Number of I/O: 53
DigiKey Programmable: Not Verified
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2PS13512E43W43079NOSA1 2PS13512E43W43079NOSA1 Infineon Technologies Description: STACKS IPM
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T560N14TOFXPSA1 T560N14TOFXPSA1 Infineon Technologies Infineon-T560N-DS-v03_01-en_de.pdf?fileId=db3a3043284aacd80128637eb8405343 Description: SCR MODULE 1800V 809A DO200AA
Packaging: Tray
Package / Case: DO-200AA, A-PUK
Mounting Type: Clamp On
Operating Temperature: -40°C ~ 125°C
Structure: Single
Current - Hold (Ih) (Max): 300 mA
Current - Gate Trigger (Igt) (Max): 200 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 8000A @ 50Hz
Number of SCRs, Diodes: 1 SCR
Current - On State (It (AV)) (Max): 559 A
Voltage - Gate Trigger (Vgt) (Max): 2 V
Current - On State (It (RMS)) (Max): 809 A
Voltage - Off State: 1.8 kV
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T560N16TOFXPSA1 T560N16TOFXPSA1 Infineon Technologies Infineon-T560N-DS-v03_01-en_de.pdf?fileId=db3a3043284aacd80128637eb8405343 Description: SCR MODULE 1800V 809A DO200AA
Packaging: Tray
Package / Case: DO-200AA, A-PUK
Mounting Type: Clamp On
Operating Temperature: -40°C ~ 125°C
Structure: Single
Current - Hold (Ih) (Max): 300 mA
Current - Gate Trigger (Igt) (Max): 200 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 8000A @ 50Hz
Number of SCRs, Diodes: 1 SCR
Current - On State (It (AV)) (Max): 559 A
Voltage - Gate Trigger (Vgt) (Max): 2 V
Part Status: Active
Current - On State (It (RMS)) (Max): 809 A
Voltage - Off State: 1.8 kV
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T560N14TOCMODXPSA1 Infineon Technologies Description: MOD DIODE THYRISTOR
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T560N16T1CMODXPSA1 Infineon Technologies Description: MOD DIODE THYRISTOR
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T560N16TOCMODXPSA1 Infineon Technologies Description: MOD DIODE THYRISTOR
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IPB100N12S305ATMA1 IPB100N12S305ATMA1 Infineon Technologies Infineon-IPP_B_I100N12S3-05-Data-Sheet-02-Infineon-DS-v01_00-EN.pdf?fileId=5546d462584d1d4a0158baf0aced7fe9 Description: MOSFET N-CH 120V 100A TO263-3
Packaging: Tape & Reel (TR)
Package / Case: TO-263-4, D²Pak (3 Leads + Tab), TO-263AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 5.1mOhm @ 100A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 240µA
Supplier Device Package: PG-TO263-3-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 120 V
Gate Charge (Qg) (Max) @ Vgs: 185 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11570 pF @ 25 V
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IPB100N12S305ATMA1 IPB100N12S305ATMA1 Infineon Technologies Infineon-IPP_B_I100N12S3-05-Data-Sheet-02-Infineon-DS-v01_00-EN.pdf?fileId=5546d462584d1d4a0158baf0aced7fe9 Description: MOSFET N-CH 120V 100A TO263-3
Packaging: Cut Tape (CT)
Package / Case: TO-263-4, D²Pak (3 Leads + Tab), TO-263AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 5.1mOhm @ 100A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 240µA
Supplier Device Package: PG-TO263-3-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 120 V
Gate Charge (Qg) (Max) @ Vgs: 185 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11570 pF @ 25 V
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TLE4274DV50ATMA1 TLE4274DV50ATMA1 Infineon Technologies Infineon-TLE4274-DS-v01_70-EN.pdf?fileId=5546d46258fc0bc101595f8e637f1f8f Description: IC REG LIN 5V 400MA TO252-3-11
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 400mA
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 220 µA
Voltage - Input (Max): 40V
Number of Regulators: 1
Supplier Device Package: PG-TO252-3-11
Voltage - Output (Min/Fixed): 5V
PSRR: 60dB (100Hz)
Voltage Dropout (Max): 0.5V @ 250mA
Protection Features: Over Current, Over Temperature, Reverse Polarity, Short Circuit
Current - Supply (Max): 30 mA
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TLE4274DV50ITJKKNTMA1 TLE4274DV50ITJKKNTMA1 Infineon Technologies Part_Number_Guide_Web.pdf Description: IC REG LINEAR 5V 400MA TO252-3
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 400mA
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 220 µA
Voltage - Input (Max): 40V
Number of Regulators: 1
Supplier Device Package: PG-TO252-3
Voltage - Output (Min/Fixed): 5V
PSRR: 60dB (100Hz)
Voltage Dropout (Max): 0.5V @ 250mA
Protection Features: Over Current, Over Temperature, Reverse Polarity, Short Circuit
Current - Supply (Max): 30 mA
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IRF7171MTRPBF IRF7171MTRPBF Infineon Technologies IRF7171MTRPBF.pdf Description: MOSFET N-CH 100V 15A DIRECTFET
Packaging: Cut Tape (CT)
Package / Case: DirectFET™ Isometric MN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 93A (Tc)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 56A, 10V
Power Dissipation (Max): 2.8W (Ta), 104W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 150µA
Supplier Device Package: DIRECTFET™ MN
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2160 pF @ 50 V
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BCW 61D E6327 BCW 61D E6327 Infineon Technologies INFNS11623-1.pdf?t.download=true&u=5oefqw Description: TRANS PNP 32V 0.1A SOT23
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 550mV @ 1.25mA, 50mA
Current - Collector Cutoff (Max): 20nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 380 @ 2mA, 5V
Frequency - Transition: 250MHz
Supplier Device Package: PG-SOT23
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 32 V
Power - Max: 330 mW
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BCW61BE6327 BCW61BE6327 Infineon Technologies INFNS11623-1.pdf?t.download=true&u=5oefqw Description: TRANS PNP 32V 0.1A SOT23-3
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 550mV @ 1.25mA, 50mA
Current - Collector Cutoff (Max): 20nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 2mA, 5V
Frequency - Transition: 250MHz
Supplier Device Package: PG-SOT23-3-11
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 32 V
Power - Max: 330 mW
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BCW61DE6327 BCW61DE6327 Infineon Technologies INFNS11623-1.pdf?t.download=true&u=5oefqw Description: TRANS PNP 32V 0.1A SOT23
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 550mV @ 1.25mA, 50mA
Current - Collector Cutoff (Max): 20nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 380 @ 2mA, 5V
Frequency - Transition: 250MHz
Supplier Device Package: PG-SOT23
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 32 V
Power - Max: 330 mW
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CY7C1168KV18-400BZXC CY7C1168KV18-400BZXC Infineon Technologies Infineon-CY7C1168KV18_CY7C1170KV18_18-Mbit_DDR_II+_SRAM_Two-Word_Burst_Architecture_(2.5_Cycle_Read_Latency)-DataSheet-v10_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebdb60c308a&utm_source=cypress&utm_medium=referral&utm_campaign= Description: IC SRAM 18MBIT PARALLEL 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 18Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, DDR II+
Clock Frequency: 400 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (13x15)
Part Status: Active
Memory Interface: Parallel
Memory Organization: 1M x 18
DigiKey Programmable: Not Verified
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CY7C1245KV18-400BZXC CY7C1245KV18-400BZXC Infineon Technologies download Description: IC SRAM 36MBIT PARALLEL 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 36Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, QDR II+
Clock Frequency: 400 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (13x15)
Part Status: Active
Memory Interface: Parallel
Memory Organization: 1M x 36
DigiKey Programmable: Not Verified
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BSL372SNH6327XTSA1 BSL372SNH6327XTSA1 Infineon Technologies INFN-S-A0000110228-1.pdf?t.download=true&u=5oefqw Description: MOSFET N-CH 100V 2A TSOP6-6
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BYM300B170DN2HOSA1 BYM300B170DN2HOSA1 Infineon Technologies Infineon-BYM300B170DN2-DS-v02_02-en_de.pdf?fileId=db3a304412b407950112b42fc8994d84 Description: IGBT MOD 650V 40A 20MW
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: 2 Independent
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.55V @ 15V, 25A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 40 µA
Input Capacitance (Cies) @ Vce: 2.8 nF @ 25 V
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TLE49615KXTSA1 TLE49615KXTSA1 Infineon Technologies Infineon-TLE4961_5K-DS-v01_00-en.pdf?fileId=db3a304338ec6d390138fc81f56e76bb Description: MAGNETIC SWITCH LATCH SC59
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IRF4905STRRPBF IRF4905STRRPBF Infineon Technologies irf4905spbf.pdf?fileId=5546d462533600a4015355e331c41980 Description: MOSFET P-CH 55V 42A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ 42A, 10V
Power Dissipation (Max): 170W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 180 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3500 pF @ 25 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 25
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IRF4905STRRPBF IRF4905STRRPBF Infineon Technologies irf4905spbf.pdf?fileId=5546d462533600a4015355e331c41980 Description: MOSFET P-CH 55V 42A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ 42A, 10V
Power Dissipation (Max): 170W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 180 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3500 pF @ 25 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 25
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F4100R17N3E4BPSA1 F4100R17N3E4BPSA1 Infineon Technologies Infineon-F4-100R17N3E4-DataSheet-v03_00-EN.pdf?fileId=5546d4627617cd8301761e2e216b021e Description: LOW POWER ECONO
Packaging: Tray
Part Status: Active
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FS100R17N3E4PB11BPSA1 Infineon Technologies Description: IGBT MODULE LOW POWER ECONO
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IFS150B17N3E4PB11BPSA1 Infineon Technologies Infineon-IFS150B17N3E4P_B11-DS-v03_00-EN.pdf?fileId=5546d4625e763904015e94ae58b32e1a Description: IGBT MOD 1700V 300A 20MW
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Full Bridge
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 150A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 300 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 13.5 nF @ 25 V
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BFP640FESDH6327XTSA1 Infineon-BFP540ESD-DS-v02_00-EN.pdf?fileId=5546d462689a790c01690f0382ea3920
BFP640FESDH6327XTSA1
Hersteller: Infineon Technologies
Description: RF TRANS NPN 4.7V 46GHZ 4-TSFP
Packaging: Cut Tape (CT)
Package / Case: 4-SMD, Flat Leads
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 8B ~ 30.5dB
Power - Max: 200mW
Current - Collector (Ic) (Max): 50mA
Voltage - Collector Emitter Breakdown (Max): 4.7V
DC Current Gain (hFE) (Min) @ Ic, Vce: 110 @ 30mA, 3V
Frequency - Transition: 46GHz
Noise Figure (dB Typ @ f): 0.55dB ~ 1.7dB @ 150MHz ~ 10GHz
Supplier Device Package: 4-TSFP
Part Status: Active
auf Bestellung 667 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
24+0.76 EUR
33+0.54 EUR
37+0.48 EUR
100+0.42 EUR
250+0.39 EUR
500+0.37 EUR
Mindestbestellmenge: 24
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BFP620E7764 INFNS10686-1.pdf?t.download=true&u=5oefqw
BFP620E7764
Hersteller: Infineon Technologies
Description: RF BIPOLAR TRANSISTOR
Packaging: Bulk
Package / Case: SC-82A, SOT-343
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 21.5dB
Power - Max: 185mW
Current - Collector (Ic) (Max): 80mA
Voltage - Collector Emitter Breakdown (Max): 2.8V
DC Current Gain (hFE) (Min) @ Ic, Vce: 110 @ 50mA, 1.5V
Frequency - Transition: 65GHz
Noise Figure (dB Typ @ f): 0.7dB ~ 1.3dB @ 1.8GHz ~ 6GHz
Supplier Device Package: PG-SOT343-4
Part Status: Active
Produkt ist nicht verfügbar
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IRF5210STRRPBF irf5210spbf.pdf?fileId=5546d462533600a4015355e35f77198e
IRF5210STRRPBF
Hersteller: Infineon Technologies
Description: MOSFET P-CH 100V 38A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 38A (Tc)
Rds On (Max) @ Id, Vgs: 60mOhm @ 38A, 10V
Power Dissipation (Max): 3.1W (Ta), 170W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 230 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2780 pF @ 25 V
Produkt ist nicht verfügbar
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IRF5210STRRPBF irf5210spbf.pdf?fileId=5546d462533600a4015355e35f77198e
IRF5210STRRPBF
Hersteller: Infineon Technologies
Description: MOSFET P-CH 100V 38A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 38A (Tc)
Rds On (Max) @ Id, Vgs: 60mOhm @ 38A, 10V
Power Dissipation (Max): 3.1W (Ta), 170W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 230 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2780 pF @ 25 V
Produkt ist nicht verfügbar
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SPP11N65C3HKSA1 SP%28P%2CA%2CI%2911N65C3.pdf
Hersteller: Infineon Technologies
Description: MOSFET N-CH 650V 11A TO-220
Packaging: Tube
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Part Status: Active
Produkt ist nicht verfügbar
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PBL3766/1NS ERICS00253-1.pdf?t.download=true&u=5oefqw
Hersteller: Infineon Technologies
Description: BIPOLAR SLIC
Packaging: Bulk
Package / Case: 22-DIP
Mounting Type: Through Hole
Function: Subscriber Line Interface Concept (SLIC)
Interface: 2-Wire
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: -24V ~ -58V
Supplier Device Package: 22-DIP
Part Status: Active
Number of Circuits: 1
auf Bestellung 10200 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
54+9.93 EUR
Mindestbestellmenge: 54
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IRFHM3911TRPBF irfhm3911pbf.pdf?fileId=5546d462533600a40153561ff23f1f2b
IRFHM3911TRPBF
Hersteller: Infineon Technologies
Description: MOSFET N-CH 100V 3.2A/20A 8PQFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.2A (Ta), 20A (Tc)
Rds On (Max) @ Id, Vgs: 115mOhm @ 6.3A, 10V
Power Dissipation (Max): 2.8W (Ta), 29W (Tc)
Vgs(th) (Max) @ Id: 4V @ 35µA
Supplier Device Package: 8-PQFN (3x3)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 760 pF @ 50 V
auf Bestellung 4000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4000+0.34 EUR
Mindestbestellmenge: 4000
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IRFHM3911TRPBF irfhm3911pbf.pdf?fileId=5546d462533600a40153561ff23f1f2b
IRFHM3911TRPBF
Hersteller: Infineon Technologies
Description: MOSFET N-CH 100V 3.2A/20A 8PQFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.2A (Ta), 20A (Tc)
Rds On (Max) @ Id, Vgs: 115mOhm @ 6.3A, 10V
Power Dissipation (Max): 2.8W (Ta), 29W (Tc)
Vgs(th) (Max) @ Id: 4V @ 35µA
Supplier Device Package: 8-PQFN (3x3)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 760 pF @ 50 V
auf Bestellung 5936 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
11+1.64 EUR
18+1.02 EUR
100+0.67 EUR
500+0.52 EUR
1000+0.47 EUR
2000+0.42 EUR
Mindestbestellmenge: 11
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ICE3B0365JG INFN-S-A0003615022-1.pdf?t.download=true&u=5oefqw
Hersteller: Infineon Technologies
Description: IC OFFLINE SWITCH FLYBACK 12DSO
Packaging: Bulk
Package / Case: 12-BSOP (0.295", 7.50mm Width) Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -25°C ~ 130°C (TJ)
Duty Cycle: 75%
Frequency - Switching: 67kHz
Internal Switch(s): Yes
Voltage - Breakdown: 650V
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 10.3V ~ 26V
Supplier Device Package: PG-DSO-12
Fault Protection: Current Limiting, Open Loop, Over Load, Over Temperature, Over Voltage
Control Features: Soft Start
Part Status: Active
auf Bestellung 2979 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
449+1.04 EUR
Mindestbestellmenge: 449
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ICE3B0365J-T INFNS27652-1.pdf?t.download=true&u=5oefqw
Hersteller: Infineon Technologies
Description: OFF-LINE SMPS CURRENT MODE CONTR
Packaging: Bulk
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Duty Cycle: 75%
Frequency - Switching: 67kHz
Internal Switch(s): Yes
Voltage - Breakdown: 650V
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 10.3V ~ 26V
Supplier Device Package: PG-DIP-8
Fault Protection: Current Limiting, Over Load, Over Temperature, Over Voltage
Voltage - Start Up: 18 V
Control Features: Soft Start
Part Status: Active
Power (Watts): 22 W
auf Bestellung 7234 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
416+1.11 EUR
Mindestbestellmenge: 416
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ESD5V3U4RRSH6327XTSA1 esd5v3u4rrs.pdf?folderId=db3a30431441fb5d011488a9e66f0ded&fileId=db3a30431c69a49d011cad6ae0c10a10
ESD5V3U4RRSH6327XTSA1
Hersteller: Infineon Technologies
Description: TVS DIODE 5.3VWM 15VC PGSOT363PO
Packaging: Tape & Reel (TR)
Package / Case: 6-VSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Type: Steering (Rail to Rail)
Operating Temperature: -55°C ~ 125°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 0.4pF @ 1MHz
Current - Peak Pulse (10/1000µs): 3A (8/20µs)
Voltage - Reverse Standoff (Typ): 5.3V (Max)
Supplier Device Package: PG-SOT363-PO
Unidirectional Channels: 4
Voltage - Breakdown (Min): 6.3V
Voltage - Clamping (Max) @ Ipp: 15V
Power - Peak Pulse: 50W
Power Line Protection: Yes
Produkt ist nicht verfügbar
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PTFA092201F V1 PTFA092201(E,F).pdf
PTFA092201F V1
Hersteller: Infineon Technologies
Description: IC FET RF LDMOS 220W H-37260-2
Produkt ist nicht verfügbar
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BSM15GD120DN2E3224BDLA1
Hersteller: Infineon Technologies
Description: IGBT MODULE 1200V
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Full Bridge
Operating Temperature: 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 15A
NTC Thermistor: No
Supplier Device Package: Module
Part Status: Last Time Buy
Current - Collector (Ic) (Max): 25 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 145 W
Current - Collector Cutoff (Max): 500 µA
Input Capacitance (Cies) @ Vce: 1 nF @ 25 V
Produkt ist nicht verfügbar
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BSM35GD120DN2 BSM35GD120DN2_2006-01-31.pdf
Hersteller: Infineon Technologies
Description: IGBT MOD 1200V 50A 280W
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 3.2V @ 15V, 35A
NTC Thermistor: No
Supplier Device Package: Module
IGBT Type: NPT
Current - Collector (Ic) (Max): 50 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 280 W
Input Capacitance (Cies) @ Vce: 2 nF @ 25 V
Produkt ist nicht verfügbar
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IFCM15P60GDXKMA1 Infineon-IFCM15P60GD-DS-v02_01-EN.pdf?fileId=5546d4625c167129015c53b92fc97ce2
IFCM15P60GDXKMA1
Hersteller: Infineon Technologies
Description: IFPS MODULE 650V 30A 24PWRDIP
Packaging: Tube
Package / Case: 24-PowerDIP Module (1.028", 26.10mm)
Mounting Type: Through Hole
Type: IGBT
Configuration: 3 Phase Inverter
Voltage - Isolation: 2000Vrms
Current: 30 A
Voltage: 650 V
auf Bestellung 253 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+24.94 EUR
14+17.25 EUR
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BSZ0702LSATMA1 Infineon-BSZ0702LS-DataSheet-v02_01-EN.pdf?fileId=5546d462700c0ae601708b86789613d0
BSZ0702LSATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 60V 17A/40A TSDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 20A, 10V
Power Dissipation (Max): 2.1W (Ta), 69W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 36µA
Supplier Device Package: PG-TDSON-8 FL
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 3100 pF @ 30 V
Produkt ist nicht verfügbar
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BCR573E6327 INFNS10767-1.pdf?t.download=true&u=5oefqw
BCR573E6327
Hersteller: Infineon Technologies
Description: BIPOLAR DIGITAL TRANSISTOR
auf Bestellung 34451 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5505+0.09 EUR
Mindestbestellmenge: 5505
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BCR573 INFNS17204-1.pdf?t.download=true&u=5oefqw
BCR573
Hersteller: Infineon Technologies
Description: TRANS PREBIAS
Packaging: Bulk
auf Bestellung 9000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4418+0.12 EUR
Mindestbestellmenge: 4418
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IPC90R120C3X1SA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH BARE DIE
Produkt ist nicht verfügbar
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IPC90R1K0C3X1SA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH BARE DIE
Produkt ist nicht verfügbar
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IPC90R500C3X1SA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH BARE DIE
Produkt ist nicht verfügbar
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IPC90R800C3X1SA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH BARE DIE
Packaging: Bulk
Part Status: Obsolete
Produkt ist nicht verfügbar
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IPC95R750P7X7SA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH BARE DIE
Produkt ist nicht verfügbar
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IPC95R1K2P7X7SA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH BARE DIE
Packaging: Bulk
Part Status: Active
Produkt ist nicht verfügbar
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IRFH5110TRPBF irfh5110pbf.pdf?fileId=5546d462533600a40153561aec951ea8
IRFH5110TRPBF
Hersteller: Infineon Technologies
Description: MOSFET N-CH 100V 11A/63A 8PQFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 63A (Tc)
Rds On (Max) @ Id, Vgs: 12.4mOhm @ 37A, 10V
Power Dissipation (Max): 3.6W (Ta), 114W (Tc)
Vgs(th) (Max) @ Id: 4V @ 100µA
Supplier Device Package: 8-PQFN (5x6)
Part Status: Last Time Buy
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3152 pF @ 25 V
Produkt ist nicht verfügbar
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IPC100N04S52R8ATMA1 Infineon-IPC100N04S5-2R8-DS-v01_00-EN.pdf?fileId=5546d46258fc0bc101590801b9b92904
IPC100N04S52R8ATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 40V 100A 8TDSON-34
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 2.8mOhm @ 50A, 10V
Power Dissipation (Max): 75W (Tc)
Vgs(th) (Max) @ Id: 3.4V @ 30µA
Supplier Device Package: PG-TDSON-8-34
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2600 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 4819 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
9+2.16 EUR
12+1.52 EUR
100+1.08 EUR
500+0.92 EUR
1000+0.76 EUR
2000+0.74 EUR
Mindestbestellmenge: 9
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IPC100N04S5L1R9ATMA1 Infineon-IPC100N04S5L-1R9-DS-v01_03-EN.pdf?fileId=5546d46253f65057015419c29ca352fb
IPC100N04S5L1R9ATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 40V 100A 8TDSON-34
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 1.9mOhm @ 50A, 10V
Power Dissipation (Max): 100W (Tc)
Vgs(th) (Max) @ Id: 2V @ 50µA
Supplier Device Package: PG-TDSON-8-34
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 81 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4310 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 74418 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
6+3.10 EUR
10+1.97 EUR
100+1.33 EUR
500+1.05 EUR
1000+0.96 EUR
2000+0.89 EUR
Mindestbestellmenge: 6
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BSZ070N08LS5ATMA1 Infineon-BSZ070N08LS5-DS-v02_02-EN.pdf?fileId=5546d4625696ed760156e60d9bc9507d
BSZ070N08LS5ATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 80V 40A TSDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 20A, 10V
Power Dissipation (Max): 69W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 36µA
Supplier Device Package: PG-TSDSON-8-FL
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2340 pF @ 40 V
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5000+0.95 EUR
Mindestbestellmenge: 5000
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BGA924N6E6327XTSA1 BGA924N6.pdf
BGA924N6E6327XTSA1
Hersteller: Infineon Technologies
Description: IC AMP GALI 1.559-1.61GHZ TSNP6
Packaging: Bulk
Package / Case: 6-XFDFN
Mounting Type: Surface Mount
Frequency: 1.559GHz ~ 1.61GHz
RF Type: Galileo, GLONASS, GPS
Voltage - Supply: 1.5V ~ 3.3V
Gain: 16.2dB
Current - Supply: 4.85mA
Noise Figure: 0.55dB
P1dB: -8dBm
Test Frequency: 1.55GHz ~ 1.615GHz
Supplier Device Package: TSNP-6-2
auf Bestellung 1153982 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
944+0.54 EUR
Mindestbestellmenge: 944
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IAUC120N04S6L009ATMA1 Infineon-IAUC120N04S6L009-DataSheet-v01_00-EN.pdf?fileId=5546d4626c1f3dc3016c4c4d087c177b
IAUC120N04S6L009ATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 40V 150A TDSON-8-34
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 150A (Tc)
Rds On (Max) @ Id, Vgs: 960mOhm @ 60A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 2V @ 90µA
Supplier Device Package: PG-TDSON-8-34
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 128 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7806 pF @ 25 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 25
Qualification: AEC-Q101
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5000+1.22 EUR
Mindestbestellmenge: 5000
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IAUC120N04S6N010ATMA1 Infineon-IAUC120N04S6N010-DataSheet-v01_00-EN.pdf?fileId=5546d4626c1f3dc3016c4c43cb2e1748
IAUC120N04S6N010ATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 40V 150A TDSON-8-34
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 150A (Tc)
Rds On (Max) @ Id, Vgs: 1.03mOhm @ 60A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 3V @ 90µA
Supplier Device Package: PG-TDSON-8-34
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 108 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6878 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5000+1.32 EUR
Mindestbestellmenge: 5000
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SIPC19N80C3
Hersteller: Infineon Technologies
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Produkt ist nicht verfügbar
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IRFH8325TRPBF irfh8325pbf.pdf?fileId=5546d462533600a40153561fbc041f1d
IRFH8325TRPBF
Hersteller: Infineon Technologies
Description: MOSFET N-CH 30V 21A/82A PQFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 82A (Tc)
Rds On (Max) @ Id, Vgs: 5mOhm @ 20A, 10V
Power Dissipation (Max): 3.6W (Ta), 54W (Tc)
Vgs(th) (Max) @ Id: 2.35V @ 50µA
Supplier Device Package: PQFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2487 pF @ 10 V
auf Bestellung 120 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
24+0.76 EUR
32+0.56 EUR
100+0.44 EUR
Mindestbestellmenge: 24
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CY22050KFI Infineon-CY22050_CY220501_One-PLL_General-Purpose_Flash-Programmable_Clock_Generator-DataSheet-v16_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec0cb203573&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_inte
CY22050KFI
Hersteller: Infineon Technologies
Description: IC CLOCK GEN PROG 16-TSSOP
Packaging: Tube
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Output: CMOS
Frequency - Max: 150MHz, 166.6MHz
Type: Clock Generator, Fanout Distribution
Input: LVCMOS, LVTTL, Crystal
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2.5V, 3.3V
Ratio - Input:Output: 1:6
Differential - Input:Output: No/No
Supplier Device Package: 16-TSSOP
PLL: Yes with Bypass
Divider/Multiplier: Yes/No
Number of Circuits: 1
DigiKey Programmable: Not Verified
auf Bestellung 1639 Stücke:
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Anzahl Preis
6+3.48 EUR
Mindestbestellmenge: 6
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MB89615RPMC-G-1090-BNDE1
Hersteller: Infineon Technologies
Description: IC MCU 8BIT 16KB MROM 64LQFP
Packaging: Tray
Speed: 10MHz
Program Memory Size: 16KB (16K x 8)
RAM Size: 512 x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External
Program Memory Type: Mask ROM
Core Processor: F²MC-8L
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 2.2V ~ 6V
Connectivity: Serial I/O
Peripherals: POR, PWM, WDT
Part Status: Obsolete
Number of I/O: 53
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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MB89615RPMC-G-XXX-BND
Hersteller: Infineon Technologies
Description: IC MCU 8BIT 16KB MROM 64LQFP
Packaging: Tray
Speed: 10MHz
Program Memory Size: 16KB (16K x 8)
RAM Size: 512 x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External
Program Memory Type: Mask ROM
Core Processor: F²MC-8L
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 2.2V ~ 6V
Connectivity: Serial I/O
Peripherals: POR, PWM, WDT
Part Status: Obsolete
Number of I/O: 53
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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2PS13512E43W43079NOSA1
2PS13512E43W43079NOSA1
Hersteller: Infineon Technologies
Description: STACKS IPM
Produkt ist nicht verfügbar
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T560N14TOFXPSA1 Infineon-T560N-DS-v03_01-en_de.pdf?fileId=db3a3043284aacd80128637eb8405343
T560N14TOFXPSA1
Hersteller: Infineon Technologies
Description: SCR MODULE 1800V 809A DO200AA
Packaging: Tray
Package / Case: DO-200AA, A-PUK
Mounting Type: Clamp On
Operating Temperature: -40°C ~ 125°C
Structure: Single
Current - Hold (Ih) (Max): 300 mA
Current - Gate Trigger (Igt) (Max): 200 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 8000A @ 50Hz
Number of SCRs, Diodes: 1 SCR
Current - On State (It (AV)) (Max): 559 A
Voltage - Gate Trigger (Vgt) (Max): 2 V
Current - On State (It (RMS)) (Max): 809 A
Voltage - Off State: 1.8 kV
Produkt ist nicht verfügbar
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T560N16TOFXPSA1 Infineon-T560N-DS-v03_01-en_de.pdf?fileId=db3a3043284aacd80128637eb8405343
T560N16TOFXPSA1
Hersteller: Infineon Technologies
Description: SCR MODULE 1800V 809A DO200AA
Packaging: Tray
Package / Case: DO-200AA, A-PUK
Mounting Type: Clamp On
Operating Temperature: -40°C ~ 125°C
Structure: Single
Current - Hold (Ih) (Max): 300 mA
Current - Gate Trigger (Igt) (Max): 200 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 8000A @ 50Hz
Number of SCRs, Diodes: 1 SCR
Current - On State (It (AV)) (Max): 559 A
Voltage - Gate Trigger (Vgt) (Max): 2 V
Part Status: Active
Current - On State (It (RMS)) (Max): 809 A
Voltage - Off State: 1.8 kV
auf Bestellung 15 Stücke:
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Anzahl Preis
1+197.68 EUR
12+183.00 EUR
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T560N14TOCMODXPSA1
Hersteller: Infineon Technologies
Description: MOD DIODE THYRISTOR
Produkt ist nicht verfügbar
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T560N16T1CMODXPSA1
Hersteller: Infineon Technologies
Description: MOD DIODE THYRISTOR
Produkt ist nicht verfügbar
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T560N16TOCMODXPSA1
Hersteller: Infineon Technologies
Description: MOD DIODE THYRISTOR
Produkt ist nicht verfügbar
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IPB100N12S305ATMA1 Infineon-IPP_B_I100N12S3-05-Data-Sheet-02-Infineon-DS-v01_00-EN.pdf?fileId=5546d462584d1d4a0158baf0aced7fe9
IPB100N12S305ATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 120V 100A TO263-3
Packaging: Tape & Reel (TR)
Package / Case: TO-263-4, D²Pak (3 Leads + Tab), TO-263AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 5.1mOhm @ 100A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 240µA
Supplier Device Package: PG-TO263-3-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 120 V
Gate Charge (Qg) (Max) @ Vgs: 185 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11570 pF @ 25 V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1000+4.14 EUR
2000+3.90 EUR
Mindestbestellmenge: 1000
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IPB100N12S305ATMA1 Infineon-IPP_B_I100N12S3-05-Data-Sheet-02-Infineon-DS-v01_00-EN.pdf?fileId=5546d462584d1d4a0158baf0aced7fe9
IPB100N12S305ATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 120V 100A TO263-3
Packaging: Cut Tape (CT)
Package / Case: TO-263-4, D²Pak (3 Leads + Tab), TO-263AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 5.1mOhm @ 100A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 240µA
Supplier Device Package: PG-TO263-3-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 120 V
Gate Charge (Qg) (Max) @ Vgs: 185 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11570 pF @ 25 V
auf Bestellung 3860 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+8.01 EUR
10+6.73 EUR
100+5.44 EUR
500+4.84 EUR
Mindestbestellmenge: 3
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TLE4274DV50ATMA1 Infineon-TLE4274-DS-v01_70-EN.pdf?fileId=5546d46258fc0bc101595f8e637f1f8f
TLE4274DV50ATMA1
Hersteller: Infineon Technologies
Description: IC REG LIN 5V 400MA TO252-3-11
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 400mA
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 220 µA
Voltage - Input (Max): 40V
Number of Regulators: 1
Supplier Device Package: PG-TO252-3-11
Voltage - Output (Min/Fixed): 5V
PSRR: 60dB (100Hz)
Voltage Dropout (Max): 0.5V @ 250mA
Protection Features: Over Current, Over Temperature, Reverse Polarity, Short Circuit
Current - Supply (Max): 30 mA
Produkt ist nicht verfügbar
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TLE4274DV50ITJKKNTMA1 Part_Number_Guide_Web.pdf
TLE4274DV50ITJKKNTMA1
Hersteller: Infineon Technologies
Description: IC REG LINEAR 5V 400MA TO252-3
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 400mA
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 220 µA
Voltage - Input (Max): 40V
Number of Regulators: 1
Supplier Device Package: PG-TO252-3
Voltage - Output (Min/Fixed): 5V
PSRR: 60dB (100Hz)
Voltage Dropout (Max): 0.5V @ 250mA
Protection Features: Over Current, Over Temperature, Reverse Polarity, Short Circuit
Current - Supply (Max): 30 mA
Produkt ist nicht verfügbar
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IRF7171MTRPBF IRF7171MTRPBF.pdf
IRF7171MTRPBF
Hersteller: Infineon Technologies
Description: MOSFET N-CH 100V 15A DIRECTFET
Packaging: Cut Tape (CT)
Package / Case: DirectFET™ Isometric MN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 93A (Tc)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 56A, 10V
Power Dissipation (Max): 2.8W (Ta), 104W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 150µA
Supplier Device Package: DIRECTFET™ MN
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2160 pF @ 50 V
Produkt ist nicht verfügbar
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BCW 61D E6327 INFNS11623-1.pdf?t.download=true&u=5oefqw
BCW 61D E6327
Hersteller: Infineon Technologies
Description: TRANS PNP 32V 0.1A SOT23
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 550mV @ 1.25mA, 50mA
Current - Collector Cutoff (Max): 20nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 380 @ 2mA, 5V
Frequency - Transition: 250MHz
Supplier Device Package: PG-SOT23
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 32 V
Power - Max: 330 mW
auf Bestellung 30000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
7454+0.07 EUR
Mindestbestellmenge: 7454
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BCW61BE6327 INFNS11623-1.pdf?t.download=true&u=5oefqw
BCW61BE6327
Hersteller: Infineon Technologies
Description: TRANS PNP 32V 0.1A SOT23-3
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 550mV @ 1.25mA, 50mA
Current - Collector Cutoff (Max): 20nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 2mA, 5V
Frequency - Transition: 250MHz
Supplier Device Package: PG-SOT23-3-11
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 32 V
Power - Max: 330 mW
Produkt ist nicht verfügbar
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BCW61DE6327 INFNS11623-1.pdf?t.download=true&u=5oefqw
BCW61DE6327
Hersteller: Infineon Technologies
Description: TRANS PNP 32V 0.1A SOT23
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 550mV @ 1.25mA, 50mA
Current - Collector Cutoff (Max): 20nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 380 @ 2mA, 5V
Frequency - Transition: 250MHz
Supplier Device Package: PG-SOT23
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 32 V
Power - Max: 330 mW
auf Bestellung 64915 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
6869+0.07 EUR
Mindestbestellmenge: 6869
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CY7C1168KV18-400BZXC Infineon-CY7C1168KV18_CY7C1170KV18_18-Mbit_DDR_II+_SRAM_Two-Word_Burst_Architecture_(2.5_Cycle_Read_Latency)-DataSheet-v10_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebdb60c308a&utm_source=cypress&utm_medium=referral&utm_campaign=
CY7C1168KV18-400BZXC
Hersteller: Infineon Technologies
Description: IC SRAM 18MBIT PARALLEL 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 18Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, DDR II+
Clock Frequency: 400 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (13x15)
Part Status: Active
Memory Interface: Parallel
Memory Organization: 1M x 18
DigiKey Programmable: Not Verified
auf Bestellung 781 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+22.44 EUR
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CY7C1245KV18-400BZXC download
CY7C1245KV18-400BZXC
Hersteller: Infineon Technologies
Description: IC SRAM 36MBIT PARALLEL 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 36Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, QDR II+
Clock Frequency: 400 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (13x15)
Part Status: Active
Memory Interface: Parallel
Memory Organization: 1M x 36
DigiKey Programmable: Not Verified
auf Bestellung 64 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+33.02 EUR
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BSL372SNH6327XTSA1 INFN-S-A0000110228-1.pdf?t.download=true&u=5oefqw
BSL372SNH6327XTSA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 100V 2A TSOP6-6
auf Bestellung 10385 Stücke:
Lieferzeit 10-14 Tag (e)
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BYM300B170DN2HOSA1 Infineon-BYM300B170DN2-DS-v02_02-en_de.pdf?fileId=db3a304412b407950112b42fc8994d84
BYM300B170DN2HOSA1
Hersteller: Infineon Technologies
Description: IGBT MOD 650V 40A 20MW
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: 2 Independent
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.55V @ 15V, 25A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 40 µA
Input Capacitance (Cies) @ Vce: 2.8 nF @ 25 V
Produkt ist nicht verfügbar
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TLE49615KXTSA1 Infineon-TLE4961_5K-DS-v01_00-en.pdf?fileId=db3a304338ec6d390138fc81f56e76bb
TLE49615KXTSA1
Hersteller: Infineon Technologies
Description: MAGNETIC SWITCH LATCH SC59
auf Bestellung 2859 Stücke:
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IRF4905STRRPBF irf4905spbf.pdf?fileId=5546d462533600a4015355e331c41980
IRF4905STRRPBF
Hersteller: Infineon Technologies
Description: MOSFET P-CH 55V 42A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ 42A, 10V
Power Dissipation (Max): 170W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 180 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3500 pF @ 25 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 25
Produkt ist nicht verfügbar
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IRF4905STRRPBF irf4905spbf.pdf?fileId=5546d462533600a4015355e331c41980
IRF4905STRRPBF
Hersteller: Infineon Technologies
Description: MOSFET P-CH 55V 42A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ 42A, 10V
Power Dissipation (Max): 170W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 180 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3500 pF @ 25 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 25
auf Bestellung 56 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+4.84 EUR
10+3.15 EUR
Mindestbestellmenge: 4
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F4100R17N3E4BPSA1 Infineon-F4-100R17N3E4-DataSheet-v03_00-EN.pdf?fileId=5546d4627617cd8301761e2e216b021e
F4100R17N3E4BPSA1
Hersteller: Infineon Technologies
Description: LOW POWER ECONO
Packaging: Tray
Part Status: Active
auf Bestellung 10 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+335.81 EUR
10+314.52 EUR
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FS100R17N3E4PB11BPSA1
Hersteller: Infineon Technologies
Description: IGBT MODULE LOW POWER ECONO
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IFS150B17N3E4PB11BPSA1 Infineon-IFS150B17N3E4P_B11-DS-v03_00-EN.pdf?fileId=5546d4625e763904015e94ae58b32e1a
Hersteller: Infineon Technologies
Description: IGBT MOD 1700V 300A 20MW
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Full Bridge
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 150A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 300 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 13.5 nF @ 25 V
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