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PEB20590HVIP Infineon Technologies Description: VERSATILE ISDN PORT (VIP)
Packaging: Bulk
Part Status: Active
auf Bestellung 140 Stücke:
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13+37.19 EUR
Mindestbestellmenge: 13
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TC267D40F200NBCLXUMA1 TC267D40F200NBCLXUMA1 Infineon Technologies Infineon-TC26xBC-DS-v01_00-EN.pdf?fileId=5546d462694c98b40169538e06030445 Description: IC MCU 32BIT 2.5MB FLSH 292LFBGA
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TC264D40F200NBCLXUMA1 TC264D40F200NBCLXUMA1 Infineon Technologies Infineon-TC26xBC-DS-v01_00-EN.pdf?fileId=5546d462694c98b40169538e06030445 Description: IC MCU 32BIT 2.5MB FLASH 144LQFP
Produkt ist nicht verfügbar
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EVAL1ED020I12BTTOBO1 EVAL1ED020I12BTTOBO1 Infineon Technologies Infineon-1ED020I12-BT_Evaluationboard-ApplicationNotes-v01_00-EN.pdf?fileId=db3a304340155f3d014029a4589402ef Description: EVAL BOARD FOR 1ED020I12B
Packaging: Bulk
Function: Gate Driver
Type: Power Management
Utilized IC / Part: 1ED020I12B
Supplied Contents: Board(s)
Part Status: Active
Contents: Board(s)
Produkt ist nicht verfügbar
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S25FL127SABMFB100 S25FL127SABMFB100 Infineon Technologies Infineon-S25FL127S_128-Mb_(16_MB)_3.0_V_SPI_Flash_Memory-DataSheet-v11_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ecfa58c49f7&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Description: IC FLASH 128MBIT SPI/QUAD 8SOIC
Packaging: Tray
Package / Case: 8-SOIC (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Memory Size: 128Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 108 MHz
Memory Format: FLASH
Supplier Device Package: 8-SOIC
Part Status: Active
Memory Interface: SPI - Quad I/O
Memory Organization: 16M x 8
DigiKey Programmable: Not Verified
Grade: Automotive
Qualification: AEC-Q100
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3+7.8 EUR
10+7.26 EUR
25+7.04 EUR
50+6.88 EUR
100+6.72 EUR
280+6.47 EUR
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BSF885N03LQ3G Infineon Technologies Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Part Status: Active
auf Bestellung 10000 Stücke:
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776+0.69 EUR
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BSF885N03LQ3GXUMA1 Infineon Technologies Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Part Status: Active
auf Bestellung 465000 Stücke:
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670+0.74 EUR
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TDA4863G TDA4863G Infineon Technologies Infineon-TDA4863-DS-v02_00-en.pdf?fileId=db3a304412b407950112b427d2d23ce8 Description: TDA4863 - PFC-DCM (DISCONTINUOUS
Packaging: Bulk
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C
Voltage - Supply: 10V ~ 20V
Mode: Discontinuous Conduction (DCM)
Supplier Device Package: PG-DSO-8-41
Part Status: Active
Current - Startup: 20 µA
Produkt ist nicht verfügbar
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TDA48632HKLA1 TDA48632HKLA1 Infineon Technologies Infineon-TDA4863-DS-v02_00-en.pdf?fileId=db3a304412b407950112b427d2d23ce8 Description: TDA4863 - POWER FACTOR CONTROLLE
Packaging: Bulk
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C
Voltage - Supply: 10V ~ 20V
Mode: Discontinuous Conduction (DCM)
Supplier Device Package: PG-DIP-8
Part Status: Active
Current - Startup: 20 µA
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SPW35N60C3 SPW35N60C3 Infineon Technologies Infineon-SPW35N60C3-DS-v02_05-en.pdf?fileId=db3a3043163797a601163899b120016f Description: SPW35N60 - 600V COOLMOS N-CHANNE
Packaging: Bulk
Part Status: Active
Produkt ist nicht verfügbar
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FF6MR12KM1PHOSA1 FF6MR12KM1PHOSA1 Infineon Technologies Infineon-FF6MR12KM1P-DataSheet-v02_00-EN.pdf?fileId=5546d46272aa54c00172bcb6f5ad56b6 Description: MOSFET 2N-CH 1200V 250A AG-62MM
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Silicon Carbide (SiC)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 250A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 14700pF @ 800V
Rds On (Max) @ Id, Vgs: 5.81mOhm @ 250A, 15V
Gate Charge (Qg) (Max) @ Vgs: 496nC @ 15V
Vgs(th) (Max) @ Id: 5.15V @ 80mA
Supplier Device Package: AG-62MM
Produkt ist nicht verfügbar
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TLE62633GXUMA1 TLE62633GXUMA1 Infineon Technologies TLE6263-3G.pdf Description: IC INTERFACE SPECIALIZED DSO-28
Packaging: Bulk
Package / Case: 28-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Interface: SPI Serial
Voltage - Supply: 13.5V
Supplier Device Package: P-DSO-28
Grade: Automotive
auf Bestellung 44000 Stücke:
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77+5.85 EUR
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TLE6263GNUMA1 TLE6263GNUMA1 Infineon Technologies TLE6263-3G.pdf?t.download=true&u=5oefqw Description: IC TRANSCEIVER HALF 1/1 DSO-28
Packaging: Bulk
Package / Case: 28-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Type: Transceiver
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 4.8V ~ 5.1V, 4.9V ~ 5.2V
Number of Drivers/Receivers: 1/1
Data Rate: 125kBaud
Protocol: CANbus
Supplier Device Package: PG-DSO-28-27
Receiver Hysteresis: 200 mV
Duplex: Half
Part Status: Active
auf Bestellung 10500 Stücke:
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77+5.85 EUR
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ISS55EP06LMXTSA1 ISS55EP06LMXTSA1 Infineon Technologies Infineon-ISS55EP06LM-DS-v02_00-EN.pdf?fileId=5546d46269e1c019016a0730fdf473a0 Description: MOSFET P-CH 60V 180MA SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 180mA (Ta)
Rds On (Max) @ Id, Vgs: 5.5Ohm @ 180mA, 10V
Power Dissipation (Max): 400mW (Ta)
Vgs(th) (Max) @ Id: 2V @ 11µA
Supplier Device Package: PG-SOT23-3-5
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 0.59 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 18 pF @ 30 V
auf Bestellung 83993 Stücke:
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48+0.37 EUR
76+0.23 EUR
149+0.12 EUR
500+0.11 EUR
1000+0.093 EUR
Mindestbestellmenge: 48
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BSM150GB60DLCHOSA1 BSM150GB60DLCHOSA1 Infineon Technologies Infineon-BSM150GB60DLC-DS-v01_00-en_de.pdf?fileId=db3a30431ff98815011ffb14c34f0010 Description: IGBT MOD 600V 180A 595W MOD
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -40°C ~ 125°C
Vce(on) (Max) @ Vge, Ic: 2.45V @ 15V, 150A
NTC Thermistor: No
Supplier Device Package: Module
Part Status: Obsolete
Current - Collector (Ic) (Max): 180 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 595 W
Current - Collector Cutoff (Max): 500 µA
Input Capacitance (Cies) @ Vce: 6.5 nF @ 25 V
Produkt ist nicht verfügbar
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SPW20N60C3 Infineon Technologies Infineon-SPW20N60C3-DS-v02_05-en.pdf?fileId=db3a304412b407950112b42e3702497f Description: SPW20N60 - 600V COOLMOS N-CHANNE
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20.7A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 13.1A, 10V
Power Dissipation (Max): 208W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 1mA
Supplier Device Package: PG-TO247-3-21
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 114 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 25 V
Produkt ist nicht verfügbar
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BSC0802LSATMA1 BSC0802LSATMA1 Infineon Technologies Infineon-BSC0802LS-DataSheet-v02_02-EN.pdf?fileId=5546d462700c0ae60170870e032d1d39 Description: MOSFET N-CH 100V 20A/100A TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 3.4mOhm @ 50A, 10V
Power Dissipation (Max): 156W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 115µA
Supplier Device Package: PG-TDSON-8-7
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 6500 pF @ 50 V
auf Bestellung 1111 Stücke:
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3+6.3 EUR
10+4.14 EUR
100+2.92 EUR
500+2.4 EUR
1000+2.24 EUR
Mindestbestellmenge: 3
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BSP742RI BSP742RI Infineon Technologies INFNS11733-1.pdf?t.download=true&u=5oefqw Description: BSP742 - PROFET - SMART HIGH SID
Packaging: Bulk
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 250mOhm
Input Type: Non-Inverting
Voltage - Load: 5V ~ 34V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 400mA
Ratio - Input:Output: 1:1
Supplier Device Package: PG-DSO-8-24
Fault Protection: Current Limiting (Fixed), Over Load, Over Temperature, Over Voltage, Reverse Battery, Short Circuit
Part Status: Active
Produkt ist nicht verfügbar
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IPBE65R050CFD7AATMA1 IPBE65R050CFD7AATMA1 Infineon Technologies Infineon-IPBE65R050CFD7A-DataSheet-v02_01-EN.pdf?fileId=5546d46270c4f93e0170f32a651b7c87 Description: MOSFET N-CH 650V 45A TO263-7
Packaging: Tape & Reel (TR)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab), TO-263CB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
Rds On (Max) @ Id, Vgs: 50mOhm @ 24.8A, 10V
Power Dissipation (Max): 227W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1.24mA
Supplier Device Package: PG-TO263-7-3-10
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 102 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4975 pF @ 400 V
Qualification: AEC-Q101
auf Bestellung 2000 Stücke:
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1000+6.81 EUR
Mindestbestellmenge: 1000
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IPBE65R050CFD7AATMA1 IPBE65R050CFD7AATMA1 Infineon Technologies Infineon-IPBE65R050CFD7A-DataSheet-v02_01-EN.pdf?fileId=5546d46270c4f93e0170f32a651b7c87 Description: MOSFET N-CH 650V 45A TO263-7
Packaging: Cut Tape (CT)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab), TO-263CB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
Rds On (Max) @ Id, Vgs: 50mOhm @ 24.8A, 10V
Power Dissipation (Max): 227W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1.24mA
Supplier Device Package: PG-TO263-7-3-10
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 102 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4975 pF @ 400 V
Qualification: AEC-Q101
auf Bestellung 2851 Stücke:
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2+14.82 EUR
10+10.15 EUR
100+7.5 EUR
500+6.81 EUR
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BCR116E6393 BCR116E6393 Infineon Technologies Description: SMALL SIGNAL BIPOLAR TRANSISTOR
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V
Supplier Device Package: PG-SOT23-3-3
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 150 MHz
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Produkt ist nicht verfügbar
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SPP11N65C3XK SPP11N65C3XK Infineon Technologies Infineon-SPP_A_I11N65C3-DS-v02_91-en.pdf?fileId=db3a3043163797a6011637d98e5e0049 Description: SPP11N65 - 650V AND 700V COOLMOS
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 7A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 500µA
Supplier Device Package: PG-TO220-3-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 25 V
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SPA11N65C3XK SPA11N65C3XK Infineon Technologies Infineon-SPP_A_I11N65C3-DS-v02_91-en.pdf?fileId=db3a3043163797a6011637d98e5e0049 Description: SPA11N65 - 650V AND 700V COOLMOS
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 7A, 10V
Power Dissipation (Max): 33W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 500µA
Supplier Device Package: PG-TO220-3-111
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 25 V
auf Bestellung 170 Stücke:
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170+3.45 EUR
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BF998E6327 BF998E6327 Infineon Technologies INFNS10890-1.pdf?t.download=true&u=5oefqw Description: RF MOSFET 8V SOT143
Packaging: Bulk
Package / Case: TO-253-4, TO-253AA
Current Rating (Amps): 15mA
Mounting Type: Surface Mount
Frequency: 1GHz
Configuration: N-Channel
Gain: 28dB
Technology: MOSFET
Noise Figure: 2.8dB
Supplier Device Package: SOT143 (SC-61)
Part Status: Active
Voltage - Rated: 12 V
Voltage - Test: 8 V
Current - Test: 10 mA
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IPL60R299CPAUMA1 IPL60R299CPAUMA1 Infineon Technologies IPL60R299CP_2_0.pdf?folderId=db3a3043163797a6011637d4bae7003b&fileId=db3a3043284aacd801285d1c1c8e27f4 Description: MOSFET N-CH 600V 11.1A 4VSON
Packaging: Bulk
Package / Case: 4-PowerTSFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11.1A (Tc)
Rds On (Max) @ Id, Vgs: 299mOhm @ 6.6A, 10V
Power Dissipation (Max): 96W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 440µA
Supplier Device Package: PG-VSON-4
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 100 V
auf Bestellung 46152 Stücke:
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188+2.68 EUR
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TLE4726G TLE4726G Infineon Technologies Infineon-TLE4726G-DS-v01_01-en.pdf?fileId=db3a30431f848401011fc7e136367a9d Description: TLE4726 - SERVO AND STEPPER MOTO
Produkt ist nicht verfügbar
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BSO203SP BSO203SP Infineon Technologies INFNS11905-1.pdf?t.download=true&u=5oefqw Description: P-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
Rds On (Max) @ Id, Vgs: 21mOhm @ 8.9A, 4.5V
Power Dissipation (Max): 1.6W (Ta)
Vgs(th) (Max) @ Id: 1.2V @ 50µA
Supplier Device Package: PG-DSO-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 3750 pF @ 15 V
auf Bestellung 5216 Stücke:
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834+0.63 EUR
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BSO203SPNT BSO203SPNT Infineon Technologies INFNS15552-1.pdf?t.download=true&u=5oefqw Description: P-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Ta)
Rds On (Max) @ Id, Vgs: 21mOhm @ 9A, 4.5V
Power Dissipation (Max): 2.35W (Ta)
Vgs(th) (Max) @ Id: 1.2V @ 50µA
Supplier Device Package: PG-DSO-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 50.4 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2265 pF @ 15 V
auf Bestellung 900 Stücke:
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546+0.97 EUR
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IPZ65R095C7 IPZ65R095C7 Infineon Technologies INFNS28763-1.pdf?t.download=true&u=5oefqw Description: IPZ65R095 - 650V AND 700V COOLMO
Packaging: Bulk
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 95mOhm @ 11.8A, 10V
Power Dissipation (Max): 128W (Tc)
Vgs(th) (Max) @ Id: 4V @ 590µA
Supplier Device Package: PG-TO247-4-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2140 pF @ 400 V
auf Bestellung 410 Stücke:
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IRS2332DSTRPBF IRS2332DSTRPBF Infineon Technologies fundamentals-of-power-semiconductors Description: IC GATE DRVR HALF-BRIDGE 28SOIC
Packaging: Bulk
Package / Case: 28-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 28-SOIC
Rise / Fall Time (Typ): 80ns, 35ns
Channel Type: 3-Phase
Driven Configuration: Half-Bridge
Number of Drivers: 6
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.2V
Current - Peak Output (Source, Sink): 250mA, 500mA
Part Status: Obsolete
DigiKey Programmable: Not Verified
auf Bestellung 1986 Stücke:
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BC857BE6433HTMA1 BC857BE6433HTMA1 Infineon Technologies Infineon-BC856SERIES_BC857SERIES_BC858SERIES_BC859SERIES_BC860SERIES-DS-v01_01-en.pdf?fileId=db3a304316f66ee8011787d183d011e9 Description: TRANS PNP 45V 0.1A PG-SOT23
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 220 @ 2mA, 5V
Frequency - Transition: 250MHz
Supplier Device Package: PG-SOT23
Part Status: Last Time Buy
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 330 mW
auf Bestellung 127000 Stücke:
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TLE4242G TLE4242G Infineon Technologies Infineon-TLE4242G-DS-v01_10-EN.pdf?fileId=5546d46265f064ff01660bd83f556ecc&redirId=115273 description Description: IC LED DRV LIN PWM 500MA TO263-7
Packaging: Bulk
Package / Case: TO-263-8, D²Pak (7 Leads + Tab), TO-263CA
Voltage - Output: 40V
Mounting Type: Surface Mount
Number of Outputs: 1
Type: Linear
Operating Temperature: -40°C ~ 150°C (TJ)
Applications: Automotive
Current - Output / Channel: 500mA
Internal Switch(s): Yes
Supplier Device Package: PG-TO263-7-1
Dimming: PWM
Voltage - Supply (Min): 4.5V
Voltage - Supply (Max): 42 V
Part Status: Active
Produkt ist nicht verfügbar
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IPW60R099CP IPW60R099CP Infineon Technologies INFNS16488-1.pdf?t.download=true&u=5oefqw Description: MOSFET N-CH 600V 31A TO247-3-1
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 31A (Tc)
Rds On (Max) @ Id, Vgs: 99mOhm @ 18A, 10V
Power Dissipation (Max): 255W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 1.2mA
Supplier Device Package: PG-TO247-3
Part Status: Active
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2800 pF @ 100 V
Produkt ist nicht verfügbar
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IPW60R099CPA IPW60R099CPA Infineon Technologies ONSM-S-A0003585272-1.pdf?t.download=true&u=5oefqw Description: IPW60R099 - 600V-800V N-CHANNEL
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 31A (Tc)
Rds On (Max) @ Id, Vgs: 105mOhm @ 18A, 10V
Power Dissipation (Max): 255W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 1.2mA
Supplier Device Package: PG-TO247-3-41
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2800 pF @ 100 V
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TLS202B1MBV33HTSA1 TLS202B1MBV33HTSA1 Infineon Technologies infineon-tls202b1mbv33-datasheet-en.pdf Description: IC REG LINEAR 3.3V 150MA SCT595
Packaging: Tape & Reel (TR)
Package / Case: 6-SMD (5 Leads), Gull Wing
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 150mA
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 75 µA
Voltage - Input (Max): 18V
Number of Regulators: 1
Supplier Device Package: PG-SCT595-5-1
Voltage - Output (Min/Fixed): 3.3V
Part Status: Active
PSRR: 63dB (10kHz)
Voltage Dropout (Max): 0.57V @ 150mA
Protection Features: Over Current, Over Temperature, Short Circuit
Current - Supply (Max): 200 µA
Grade: Automotive
Qualification: AEC-Q100
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TLS202B1MBV33HTSA1 TLS202B1MBV33HTSA1 Infineon Technologies infineon-tls202b1mbv33-datasheet-en.pdf Description: IC REG LINEAR 3.3V 150MA SCT595
Packaging: Cut Tape (CT)
Package / Case: 6-SMD (5 Leads), Gull Wing
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 150mA
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 75 µA
Voltage - Input (Max): 18V
Number of Regulators: 1
Supplier Device Package: PG-SCT595-5-1
Voltage - Output (Min/Fixed): 3.3V
Part Status: Active
PSRR: 63dB (10kHz)
Voltage Dropout (Max): 0.57V @ 150mA
Protection Features: Over Current, Over Temperature, Short Circuit
Current - Supply (Max): 200 µA
Grade: Automotive
Qualification: AEC-Q100
auf Bestellung 1553 Stücke:
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13+1.46 EUR
17+1.05 EUR
25+0.95 EUR
100+0.84 EUR
250+0.78 EUR
500+0.75 EUR
1000+0.72 EUR
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IR3566BMTRPBF IR3566BMTRPBF Infineon Technologies pb-ir3566b.pdf?fileId=5546d462533600a40153568028fe28eb Description: IC REG CTRLR INTEL 2OUT 48QFN
Packaging: Tape & Reel (TR)
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Number of Outputs: 2
Voltage - Input: 3.3V
Operating Temperature: -40°C ~ 85°C
Applications: Controller, Intel VR12, VR12.5, AMD SVI1, SVI2
Supplier Device Package: 48-QFN (6x6)
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IR3566BMTRPBF IR3566BMTRPBF Infineon Technologies pb-ir3566b.pdf?fileId=5546d462533600a40153568028fe28eb Description: IC REG CTRLR INTEL 2OUT 48QFN
Packaging: Cut Tape (CT)
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Number of Outputs: 2
Voltage - Input: 3.3V
Operating Temperature: -40°C ~ 85°C
Applications: Controller, Intel VR12, VR12.5, AMD SVI1, SVI2
Supplier Device Package: 48-QFN (6x6)
auf Bestellung 1755 Stücke:
Lieferzeit 10-14 Tag (e)
2+11.83 EUR
10+10.69 EUR
25+10.2 EUR
100+8.85 EUR
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BSC0902NSATMA1 BSC0902NSATMA1 Infineon Technologies BSC0902NS_Rev+2.1.pdf?folderId=db3a304313b8b5a60113cee8763b02d7&fileId=db3a30432c64a60d012cc053cffb38b5 Description: MOSFET N-CH 30V 24A/100A TDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 2.6mOhm @ 30A, 10V
Power Dissipation (Max): 2.5W (Ta), 48W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: PG-TDSON-8-6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 15 V
auf Bestellung 15000 Stücke:
Lieferzeit 10-14 Tag (e)
5000+0.48 EUR
10000+0.46 EUR
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BSC0902NSATMA1 BSC0902NSATMA1 Infineon Technologies BSC0902NS_Rev+2.1.pdf?folderId=db3a304313b8b5a60113cee8763b02d7&fileId=db3a30432c64a60d012cc053cffb38b5 Description: MOSFET N-CH 30V 24A/100A TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 2.6mOhm @ 30A, 10V
Power Dissipation (Max): 2.5W (Ta), 48W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: PG-TDSON-8-6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 15 V
auf Bestellung 17278 Stücke:
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9+2.04 EUR
14+1.29 EUR
100+0.85 EUR
500+0.66 EUR
1000+0.6 EUR
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BSC0902NSIATMA1 BSC0902NSIATMA1 Infineon Technologies BSC0902NSI_Rev_2.1.pdf?folderId=db3a304313b8b5a60113cee8763b02d7&fileId=db3a30433072cd8f01308ea027703424 Description: MOSFET N-CH 30V 23A/100A TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 23A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 2.8mOhm @ 30A, 10V
Power Dissipation (Max): 2.5W (Ta), 48W (Tc)
Vgs(th) (Max) @ Id: 2V @ 10mA
Supplier Device Package: PG-TDSON-8-6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 15 V
auf Bestellung 24263 Stücke:
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10+1.81 EUR
16+1.14 EUR
100+0.75 EUR
500+0.58 EUR
1000+0.53 EUR
2000+0.48 EUR
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BSC0901NSATMA1 BSC0901NSATMA1 Infineon Technologies BSC0901NS_Rev+1.21.pdf?folderId=db3a304313b8b5a60113cee8763b02d7&fileId=db3a30432c64a60d012cbc8040080376 Description: MOSFET N-CH 30V 28A/100A TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 1.9mOhm @ 30A, 10V
Power Dissipation (Max): 2.5W (Ta), 69W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: PG-TDSON-8-5
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2800 pF @ 15 V
auf Bestellung 35612 Stücke:
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500+0.59 EUR
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BSC091N03MSCG BSC091N03MSCG Infineon Technologies INFNS13697-1.pdf?t.download=true&u=5oefqw Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Part Status: Active
auf Bestellung 15000 Stücke:
Lieferzeit 10-14 Tag (e)
1250+0.4 EUR
Mindestbestellmenge: 1250
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BSC0908NS BSC0908NS Infineon Technologies INFNS27230-1.pdf?t.download=true&u=5oefqw Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Part Status: Active
auf Bestellung 6400 Stücke:
Lieferzeit 10-14 Tag (e)
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XC2060N40F80LRABKXUMA1 Infineon Technologies Description: IC MCU 16BIT FLASH
Packaging: Tape & Reel (TR)
Part Status: Not For New Designs
DigiKey Programmable: Not Verified
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XC2060N40F80LAAKXUMA1 XC2060N40F80LAAKXUMA1 Infineon Technologies Product_Cat_3-10-14.pdf Description: IC MCU 16/32B 320KB FLSH 100LQFP
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IPD650P06NMATMA1 IPD650P06NMATMA1 Infineon Technologies Infineon-IPD650P06NM-DS-v02_00-EN.pdf?fileId=5546d46269e1c019016a03e2db2100b1 Description: MOSFET P-CH 60V 22A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
Rds On (Max) @ Id, Vgs: 65mOhm @ 22A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1.04mA
Supplier Device Package: PG-TO252-3-313
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 30 V
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2500+0.9 EUR
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IPD650P06NMATMA1 IPD650P06NMATMA1 Infineon Technologies Infineon-IPD650P06NM-DS-v02_00-EN.pdf?fileId=5546d46269e1c019016a03e2db2100b1 Description: MOSFET P-CH 60V 22A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
Rds On (Max) @ Id, Vgs: 65mOhm @ 22A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1.04mA
Supplier Device Package: PG-TO252-3-313
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 30 V
auf Bestellung 7154 Stücke:
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BC807-16WE6327 BC807-16WE6327 Infineon Technologies INFNS11647-1.pdf?t.download=true&u=5oefqw Description: TRANS PNP 45V 0.5A PG-SOT23-3-11
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 1V
Frequency - Transition: 200MHz
Supplier Device Package: PG-SOT23-3-11
Part Status: Active
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 250 mW
auf Bestellung 90000 Stücke:
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BC80716E6327 BC80716E6327 Infineon Technologies INFNS11647-1.pdf?t.download=true&u=5oefqw Description: TRANS PNP 45V 0.5A PG-SOT23-3-11
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 1V
Frequency - Transition: 200MHz
Supplier Device Package: PG-SOT23-3-11
Part Status: Active
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 330 mW
auf Bestellung 45000 Stücke:
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10377+0.049 EUR
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IPT059N15N3ATMA1 IPT059N15N3ATMA1 Infineon Technologies IPT059N15N3+G_Rev1.1.pdf?folderId=db3a304326623792012669f6bee2224b&fileId=db3a30433e9d5d11013e9e62778d0185 Description: MOSFET N-CH 150V 155A 8HSOF
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 155A (Tc)
Rds On (Max) @ Id, Vgs: 5.9mOhm @ 150A, 10V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 4V @ 270µA
Supplier Device Package: PG-HSOF-8-1
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 92 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7200 pF @ 75 V
auf Bestellung 2544 Stücke:
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2+8.99 EUR
10+6.02 EUR
100+4.33 EUR
500+4.27 EUR
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CWM60FN Infineon Technologies Description: CWM60FN - RECTIFIER DIODE
Produkt ist nicht verfügbar
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SPA08N80C3 SPA08N80C3 Infineon Technologies INFN-S-A0004583436-1.pdf?t.download=true&u=5oefqw Description: SPA08N80 - 800V COOLMOS N-CHANNE
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SPP08N80C3 SPP08N80C3 Infineon Technologies Infineon-SPP08N80C3-DS-v02_91-en.pdf?fileId=db3a30432313ff5e0123a905a6005c8a Description: SPP08N80 - 800V COOLMOS N-CHANNE
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 650mOhm @ 5.1A, 10V
Power Dissipation (Max): 104W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 470µA
Supplier Device Package: PG-TO220-3-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 100 V
Produkt ist nicht verfügbar
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IFX30081LDVGRNXUMA1 IFX30081LDVGRNXUMA1 Infineon Technologies Infineon-High-Performance-Industrial-Linear-Voltage-Regulators-PB-v01_00-EN.pdf?fileId=5546d4625607bd13015659ef06a40d5f Description: IC REG LINEAR 50MA TSON-10
Produkt ist nicht verfügbar
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TLE4206-2G TLE4206-2G Infineon Technologies Infineon-TLE4206-2G-DS-v01_03-EN.pdf?fileId=5546d4625a888733015a8a3f58793f40 Description: TLE4206 - SERVO AND STEPPER MOTO
Packaging: Bulk
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 800mA
Interface: Parallel
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge (2)
Voltage - Supply: 8V ~ 18V
Applications: Automotive
Technology: Bipolar
Voltage - Load: 8V ~ 18V
Supplier Device Package: PG-DSO-14-22
Motor Type - AC, DC: Servo DC
Part Status: Active
Produkt ist nicht verfügbar
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IPBE65R075CFD7AATMA1 IPBE65R075CFD7AATMA1 Infineon Technologies Infineon-IPBE65R075CFD7A-DataSheet-v02_01-EN.pdf?fileId=5546d46270c4f93e0170f32a7a137c8a Description: MOSFET N-CH 650V 32A TO263-7
Packaging: Tape & Reel (TR)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab), TO-263CB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 32A (Tc)
Rds On (Max) @ Id, Vgs: 75mOhm @ 16.4A, 10V
Power Dissipation (Max): 171W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 820µA
Supplier Device Package: PG-TO263-7-3-10
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3288 pF @ 400 V
Grade: Automotive
Qualification: AEC-Q101
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BFP450 BFP450 Infineon Technologies INFNS30285-1.pdf?t.download=true&u=5oefqw Description: RF SMALL SIGNAL BIPOLAR TRANSIST
Packaging: Bulk
Part Status: Active
auf Bestellung 118871 Stücke:
Lieferzeit 10-14 Tag (e)
945+0.48 EUR
Mindestbestellmenge: 945
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PEB4265-2TV1.1 Infineon Technologies INTL-S-A0006019977-1.pdf?t.download=true&u=5oefqw Description: DUSLIC DUAL CHANNEL SUBSCRIBER L
Packaging: Bulk
Part Status: Active
auf Bestellung 769 Stücke:
Lieferzeit 10-14 Tag (e)
64+7.89 EUR
Mindestbestellmenge: 64
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SPU02N60C3 Infineon Technologies Infineon-SPD_U02N60C3-DS-v02_06-EN.pdf?fileId=db3a304412b407950112b42d79214883 Description: SPU02N60 - 600V COOLMOS N-CHANNE
Packaging: Bulk
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.8A (Tc)
Rds On (Max) @ Id, Vgs: 3Ohm @ 1.1A, 10V
Power Dissipation (Max): 25W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 80µA
Supplier Device Package: PG-TO-251-3-21
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 12.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 200 pF @ 25 V
Produkt ist nicht verfügbar
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PEB20590HVIP
Hersteller: Infineon Technologies
Description: VERSATILE ISDN PORT (VIP)
Packaging: Bulk
Part Status: Active
auf Bestellung 140 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
13+37.19 EUR
Mindestbestellmenge: 13
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TC267D40F200NBCLXUMA1 Infineon-TC26xBC-DS-v01_00-EN.pdf?fileId=5546d462694c98b40169538e06030445
TC267D40F200NBCLXUMA1
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 2.5MB FLSH 292LFBGA
Produkt ist nicht verfügbar
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TC264D40F200NBCLXUMA1 Infineon-TC26xBC-DS-v01_00-EN.pdf?fileId=5546d462694c98b40169538e06030445
TC264D40F200NBCLXUMA1
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 2.5MB FLASH 144LQFP
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EVAL1ED020I12BTTOBO1 Infineon-1ED020I12-BT_Evaluationboard-ApplicationNotes-v01_00-EN.pdf?fileId=db3a304340155f3d014029a4589402ef
EVAL1ED020I12BTTOBO1
Hersteller: Infineon Technologies
Description: EVAL BOARD FOR 1ED020I12B
Packaging: Bulk
Function: Gate Driver
Type: Power Management
Utilized IC / Part: 1ED020I12B
Supplied Contents: Board(s)
Part Status: Active
Contents: Board(s)
Produkt ist nicht verfügbar
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S25FL127SABMFB100 Infineon-S25FL127S_128-Mb_(16_MB)_3.0_V_SPI_Flash_Memory-DataSheet-v11_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ecfa58c49f7&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
S25FL127SABMFB100
Hersteller: Infineon Technologies
Description: IC FLASH 128MBIT SPI/QUAD 8SOIC
Packaging: Tray
Package / Case: 8-SOIC (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Memory Size: 128Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 108 MHz
Memory Format: FLASH
Supplier Device Package: 8-SOIC
Part Status: Active
Memory Interface: SPI - Quad I/O
Memory Organization: 16M x 8
DigiKey Programmable: Not Verified
Grade: Automotive
Qualification: AEC-Q100
auf Bestellung 408 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+7.8 EUR
10+7.26 EUR
25+7.04 EUR
50+6.88 EUR
100+6.72 EUR
280+6.47 EUR
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BSF885N03LQ3G
Hersteller: Infineon Technologies
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Part Status: Active
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
776+0.69 EUR
Mindestbestellmenge: 776
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BSF885N03LQ3GXUMA1
Hersteller: Infineon Technologies
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Part Status: Active
auf Bestellung 465000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
670+0.74 EUR
Mindestbestellmenge: 670
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TDA4863G Infineon-TDA4863-DS-v02_00-en.pdf?fileId=db3a304412b407950112b427d2d23ce8
TDA4863G
Hersteller: Infineon Technologies
Description: TDA4863 - PFC-DCM (DISCONTINUOUS
Packaging: Bulk
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C
Voltage - Supply: 10V ~ 20V
Mode: Discontinuous Conduction (DCM)
Supplier Device Package: PG-DSO-8-41
Part Status: Active
Current - Startup: 20 µA
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TDA48632HKLA1 Infineon-TDA4863-DS-v02_00-en.pdf?fileId=db3a304412b407950112b427d2d23ce8
TDA48632HKLA1
Hersteller: Infineon Technologies
Description: TDA4863 - POWER FACTOR CONTROLLE
Packaging: Bulk
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C
Voltage - Supply: 10V ~ 20V
Mode: Discontinuous Conduction (DCM)
Supplier Device Package: PG-DIP-8
Part Status: Active
Current - Startup: 20 µA
Produkt ist nicht verfügbar
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SPW35N60C3 Infineon-SPW35N60C3-DS-v02_05-en.pdf?fileId=db3a3043163797a601163899b120016f
SPW35N60C3
Hersteller: Infineon Technologies
Description: SPW35N60 - 600V COOLMOS N-CHANNE
Packaging: Bulk
Part Status: Active
Produkt ist nicht verfügbar
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FF6MR12KM1PHOSA1 Infineon-FF6MR12KM1P-DataSheet-v02_00-EN.pdf?fileId=5546d46272aa54c00172bcb6f5ad56b6
FF6MR12KM1PHOSA1
Hersteller: Infineon Technologies
Description: MOSFET 2N-CH 1200V 250A AG-62MM
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Silicon Carbide (SiC)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 250A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 14700pF @ 800V
Rds On (Max) @ Id, Vgs: 5.81mOhm @ 250A, 15V
Gate Charge (Qg) (Max) @ Vgs: 496nC @ 15V
Vgs(th) (Max) @ Id: 5.15V @ 80mA
Supplier Device Package: AG-62MM
Produkt ist nicht verfügbar
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TLE62633GXUMA1 TLE6263-3G.pdf
TLE62633GXUMA1
Hersteller: Infineon Technologies
Description: IC INTERFACE SPECIALIZED DSO-28
Packaging: Bulk
Package / Case: 28-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Interface: SPI Serial
Voltage - Supply: 13.5V
Supplier Device Package: P-DSO-28
Grade: Automotive
auf Bestellung 44000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
77+5.85 EUR
Mindestbestellmenge: 77
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TLE6263GNUMA1 TLE6263-3G.pdf?t.download=true&u=5oefqw
TLE6263GNUMA1
Hersteller: Infineon Technologies
Description: IC TRANSCEIVER HALF 1/1 DSO-28
Packaging: Bulk
Package / Case: 28-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Type: Transceiver
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 4.8V ~ 5.1V, 4.9V ~ 5.2V
Number of Drivers/Receivers: 1/1
Data Rate: 125kBaud
Protocol: CANbus
Supplier Device Package: PG-DSO-28-27
Receiver Hysteresis: 200 mV
Duplex: Half
Part Status: Active
auf Bestellung 10500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
77+5.85 EUR
Mindestbestellmenge: 77
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ISS55EP06LMXTSA1 Infineon-ISS55EP06LM-DS-v02_00-EN.pdf?fileId=5546d46269e1c019016a0730fdf473a0
ISS55EP06LMXTSA1
Hersteller: Infineon Technologies
Description: MOSFET P-CH 60V 180MA SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 180mA (Ta)
Rds On (Max) @ Id, Vgs: 5.5Ohm @ 180mA, 10V
Power Dissipation (Max): 400mW (Ta)
Vgs(th) (Max) @ Id: 2V @ 11µA
Supplier Device Package: PG-SOT23-3-5
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 0.59 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 18 pF @ 30 V
auf Bestellung 83993 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
48+0.37 EUR
76+0.23 EUR
149+0.12 EUR
500+0.11 EUR
1000+0.093 EUR
Mindestbestellmenge: 48
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BSM150GB60DLCHOSA1 Infineon-BSM150GB60DLC-DS-v01_00-en_de.pdf?fileId=db3a30431ff98815011ffb14c34f0010
BSM150GB60DLCHOSA1
Hersteller: Infineon Technologies
Description: IGBT MOD 600V 180A 595W MOD
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -40°C ~ 125°C
Vce(on) (Max) @ Vge, Ic: 2.45V @ 15V, 150A
NTC Thermistor: No
Supplier Device Package: Module
Part Status: Obsolete
Current - Collector (Ic) (Max): 180 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 595 W
Current - Collector Cutoff (Max): 500 µA
Input Capacitance (Cies) @ Vce: 6.5 nF @ 25 V
Produkt ist nicht verfügbar
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SPW20N60C3 Infineon-SPW20N60C3-DS-v02_05-en.pdf?fileId=db3a304412b407950112b42e3702497f
Hersteller: Infineon Technologies
Description: SPW20N60 - 600V COOLMOS N-CHANNE
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20.7A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 13.1A, 10V
Power Dissipation (Max): 208W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 1mA
Supplier Device Package: PG-TO247-3-21
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 114 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 25 V
Produkt ist nicht verfügbar
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BSC0802LSATMA1 Infineon-BSC0802LS-DataSheet-v02_02-EN.pdf?fileId=5546d462700c0ae60170870e032d1d39
BSC0802LSATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 100V 20A/100A TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 3.4mOhm @ 50A, 10V
Power Dissipation (Max): 156W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 115µA
Supplier Device Package: PG-TDSON-8-7
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 6500 pF @ 50 V
auf Bestellung 1111 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+6.3 EUR
10+4.14 EUR
100+2.92 EUR
500+2.4 EUR
1000+2.24 EUR
Mindestbestellmenge: 3
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BSP742RI INFNS11733-1.pdf?t.download=true&u=5oefqw
BSP742RI
Hersteller: Infineon Technologies
Description: BSP742 - PROFET - SMART HIGH SID
Packaging: Bulk
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 250mOhm
Input Type: Non-Inverting
Voltage - Load: 5V ~ 34V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 400mA
Ratio - Input:Output: 1:1
Supplier Device Package: PG-DSO-8-24
Fault Protection: Current Limiting (Fixed), Over Load, Over Temperature, Over Voltage, Reverse Battery, Short Circuit
Part Status: Active
Produkt ist nicht verfügbar
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IPBE65R050CFD7AATMA1 Infineon-IPBE65R050CFD7A-DataSheet-v02_01-EN.pdf?fileId=5546d46270c4f93e0170f32a651b7c87
IPBE65R050CFD7AATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 650V 45A TO263-7
Packaging: Tape & Reel (TR)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab), TO-263CB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
Rds On (Max) @ Id, Vgs: 50mOhm @ 24.8A, 10V
Power Dissipation (Max): 227W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1.24mA
Supplier Device Package: PG-TO263-7-3-10
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 102 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4975 pF @ 400 V
Qualification: AEC-Q101
auf Bestellung 2000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1000+6.81 EUR
Mindestbestellmenge: 1000
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IPBE65R050CFD7AATMA1 Infineon-IPBE65R050CFD7A-DataSheet-v02_01-EN.pdf?fileId=5546d46270c4f93e0170f32a651b7c87
IPBE65R050CFD7AATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 650V 45A TO263-7
Packaging: Cut Tape (CT)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab), TO-263CB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
Rds On (Max) @ Id, Vgs: 50mOhm @ 24.8A, 10V
Power Dissipation (Max): 227W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1.24mA
Supplier Device Package: PG-TO263-7-3-10
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 102 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4975 pF @ 400 V
Qualification: AEC-Q101
auf Bestellung 2851 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+14.82 EUR
10+10.15 EUR
100+7.5 EUR
500+6.81 EUR
Mindestbestellmenge: 2
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BCR116E6393
BCR116E6393
Hersteller: Infineon Technologies
Description: SMALL SIGNAL BIPOLAR TRANSISTOR
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V
Supplier Device Package: PG-SOT23-3-3
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 150 MHz
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Produkt ist nicht verfügbar
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SPP11N65C3XK Infineon-SPP_A_I11N65C3-DS-v02_91-en.pdf?fileId=db3a3043163797a6011637d98e5e0049
SPP11N65C3XK
Hersteller: Infineon Technologies
Description: SPP11N65 - 650V AND 700V COOLMOS
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 7A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 500µA
Supplier Device Package: PG-TO220-3-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 25 V
Produkt ist nicht verfügbar
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SPA11N65C3XK Infineon-SPP_A_I11N65C3-DS-v02_91-en.pdf?fileId=db3a3043163797a6011637d98e5e0049
SPA11N65C3XK
Hersteller: Infineon Technologies
Description: SPA11N65 - 650V AND 700V COOLMOS
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 7A, 10V
Power Dissipation (Max): 33W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 500µA
Supplier Device Package: PG-TO220-3-111
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 25 V
auf Bestellung 170 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
170+3.45 EUR
Mindestbestellmenge: 170
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BF998E6327 INFNS10890-1.pdf?t.download=true&u=5oefqw
BF998E6327
Hersteller: Infineon Technologies
Description: RF MOSFET 8V SOT143
Packaging: Bulk
Package / Case: TO-253-4, TO-253AA
Current Rating (Amps): 15mA
Mounting Type: Surface Mount
Frequency: 1GHz
Configuration: N-Channel
Gain: 28dB
Technology: MOSFET
Noise Figure: 2.8dB
Supplier Device Package: SOT143 (SC-61)
Part Status: Active
Voltage - Rated: 12 V
Voltage - Test: 8 V
Current - Test: 10 mA
Produkt ist nicht verfügbar
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IPL60R299CPAUMA1 IPL60R299CP_2_0.pdf?folderId=db3a3043163797a6011637d4bae7003b&fileId=db3a3043284aacd801285d1c1c8e27f4
IPL60R299CPAUMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 600V 11.1A 4VSON
Packaging: Bulk
Package / Case: 4-PowerTSFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11.1A (Tc)
Rds On (Max) @ Id, Vgs: 299mOhm @ 6.6A, 10V
Power Dissipation (Max): 96W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 440µA
Supplier Device Package: PG-VSON-4
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 100 V
auf Bestellung 46152 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
188+2.68 EUR
Mindestbestellmenge: 188
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TLE4726G Infineon-TLE4726G-DS-v01_01-en.pdf?fileId=db3a30431f848401011fc7e136367a9d
TLE4726G
Hersteller: Infineon Technologies
Description: TLE4726 - SERVO AND STEPPER MOTO
Produkt ist nicht verfügbar
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BSO203SP INFNS11905-1.pdf?t.download=true&u=5oefqw
BSO203SP
Hersteller: Infineon Technologies
Description: P-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
Rds On (Max) @ Id, Vgs: 21mOhm @ 8.9A, 4.5V
Power Dissipation (Max): 1.6W (Ta)
Vgs(th) (Max) @ Id: 1.2V @ 50µA
Supplier Device Package: PG-DSO-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 3750 pF @ 15 V
auf Bestellung 5216 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
834+0.63 EUR
Mindestbestellmenge: 834
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BSO203SPNT INFNS15552-1.pdf?t.download=true&u=5oefqw
BSO203SPNT
Hersteller: Infineon Technologies
Description: P-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Ta)
Rds On (Max) @ Id, Vgs: 21mOhm @ 9A, 4.5V
Power Dissipation (Max): 2.35W (Ta)
Vgs(th) (Max) @ Id: 1.2V @ 50µA
Supplier Device Package: PG-DSO-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 50.4 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2265 pF @ 15 V
auf Bestellung 900 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
546+0.97 EUR
Mindestbestellmenge: 546
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IPZ65R095C7 INFNS28763-1.pdf?t.download=true&u=5oefqw
IPZ65R095C7
Hersteller: Infineon Technologies
Description: IPZ65R095 - 650V AND 700V COOLMO
Packaging: Bulk
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 95mOhm @ 11.8A, 10V
Power Dissipation (Max): 128W (Tc)
Vgs(th) (Max) @ Id: 4V @ 590µA
Supplier Device Package: PG-TO247-4-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2140 pF @ 400 V
auf Bestellung 410 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
71+7.48 EUR
Mindestbestellmenge: 71
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IRS2332DSTRPBF fundamentals-of-power-semiconductors
IRS2332DSTRPBF
Hersteller: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 28SOIC
Packaging: Bulk
Package / Case: 28-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 28-SOIC
Rise / Fall Time (Typ): 80ns, 35ns
Channel Type: 3-Phase
Driven Configuration: Half-Bridge
Number of Drivers: 6
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.2V
Current - Peak Output (Source, Sink): 250mA, 500mA
Part Status: Obsolete
DigiKey Programmable: Not Verified
auf Bestellung 1986 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
86+5.3 EUR
Mindestbestellmenge: 86
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BC857BE6433HTMA1 Infineon-BC856SERIES_BC857SERIES_BC858SERIES_BC859SERIES_BC860SERIES-DS-v01_01-en.pdf?fileId=db3a304316f66ee8011787d183d011e9
BC857BE6433HTMA1
Hersteller: Infineon Technologies
Description: TRANS PNP 45V 0.1A PG-SOT23
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 220 @ 2mA, 5V
Frequency - Transition: 250MHz
Supplier Device Package: PG-SOT23
Part Status: Last Time Buy
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 330 mW
auf Bestellung 127000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
6916+0.061 EUR
Mindestbestellmenge: 6916
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TLE4242G description Infineon-TLE4242G-DS-v01_10-EN.pdf?fileId=5546d46265f064ff01660bd83f556ecc&redirId=115273
TLE4242G
Hersteller: Infineon Technologies
Description: IC LED DRV LIN PWM 500MA TO263-7
Packaging: Bulk
Package / Case: TO-263-8, D²Pak (7 Leads + Tab), TO-263CA
Voltage - Output: 40V
Mounting Type: Surface Mount
Number of Outputs: 1
Type: Linear
Operating Temperature: -40°C ~ 150°C (TJ)
Applications: Automotive
Current - Output / Channel: 500mA
Internal Switch(s): Yes
Supplier Device Package: PG-TO263-7-1
Dimming: PWM
Voltage - Supply (Min): 4.5V
Voltage - Supply (Max): 42 V
Part Status: Active
Produkt ist nicht verfügbar
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IPW60R099CP INFNS16488-1.pdf?t.download=true&u=5oefqw
IPW60R099CP
Hersteller: Infineon Technologies
Description: MOSFET N-CH 600V 31A TO247-3-1
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 31A (Tc)
Rds On (Max) @ Id, Vgs: 99mOhm @ 18A, 10V
Power Dissipation (Max): 255W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 1.2mA
Supplier Device Package: PG-TO247-3
Part Status: Active
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2800 pF @ 100 V
Produkt ist nicht verfügbar
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IPW60R099CPA ONSM-S-A0003585272-1.pdf?t.download=true&u=5oefqw
IPW60R099CPA
Hersteller: Infineon Technologies
Description: IPW60R099 - 600V-800V N-CHANNEL
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 31A (Tc)
Rds On (Max) @ Id, Vgs: 105mOhm @ 18A, 10V
Power Dissipation (Max): 255W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 1.2mA
Supplier Device Package: PG-TO247-3-41
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2800 pF @ 100 V
Produkt ist nicht verfügbar
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TLS202B1MBV33HTSA1 infineon-tls202b1mbv33-datasheet-en.pdf
TLS202B1MBV33HTSA1
Hersteller: Infineon Technologies
Description: IC REG LINEAR 3.3V 150MA SCT595
Packaging: Tape & Reel (TR)
Package / Case: 6-SMD (5 Leads), Gull Wing
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 150mA
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 75 µA
Voltage - Input (Max): 18V
Number of Regulators: 1
Supplier Device Package: PG-SCT595-5-1
Voltage - Output (Min/Fixed): 3.3V
Part Status: Active
PSRR: 63dB (10kHz)
Voltage Dropout (Max): 0.57V @ 150mA
Protection Features: Over Current, Over Temperature, Short Circuit
Current - Supply (Max): 200 µA
Grade: Automotive
Qualification: AEC-Q100
Produkt ist nicht verfügbar
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TLS202B1MBV33HTSA1 infineon-tls202b1mbv33-datasheet-en.pdf
TLS202B1MBV33HTSA1
Hersteller: Infineon Technologies
Description: IC REG LINEAR 3.3V 150MA SCT595
Packaging: Cut Tape (CT)
Package / Case: 6-SMD (5 Leads), Gull Wing
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 150mA
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 75 µA
Voltage - Input (Max): 18V
Number of Regulators: 1
Supplier Device Package: PG-SCT595-5-1
Voltage - Output (Min/Fixed): 3.3V
Part Status: Active
PSRR: 63dB (10kHz)
Voltage Dropout (Max): 0.57V @ 150mA
Protection Features: Over Current, Over Temperature, Short Circuit
Current - Supply (Max): 200 µA
Grade: Automotive
Qualification: AEC-Q100
auf Bestellung 1553 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
13+1.46 EUR
17+1.05 EUR
25+0.95 EUR
100+0.84 EUR
250+0.78 EUR
500+0.75 EUR
1000+0.72 EUR
Mindestbestellmenge: 13
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IR3566BMTRPBF pb-ir3566b.pdf?fileId=5546d462533600a40153568028fe28eb
IR3566BMTRPBF
Hersteller: Infineon Technologies
Description: IC REG CTRLR INTEL 2OUT 48QFN
Packaging: Tape & Reel (TR)
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Number of Outputs: 2
Voltage - Input: 3.3V
Operating Temperature: -40°C ~ 85°C
Applications: Controller, Intel VR12, VR12.5, AMD SVI1, SVI2
Supplier Device Package: 48-QFN (6x6)
Produkt ist nicht verfügbar
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IR3566BMTRPBF pb-ir3566b.pdf?fileId=5546d462533600a40153568028fe28eb
IR3566BMTRPBF
Hersteller: Infineon Technologies
Description: IC REG CTRLR INTEL 2OUT 48QFN
Packaging: Cut Tape (CT)
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Number of Outputs: 2
Voltage - Input: 3.3V
Operating Temperature: -40°C ~ 85°C
Applications: Controller, Intel VR12, VR12.5, AMD SVI1, SVI2
Supplier Device Package: 48-QFN (6x6)
auf Bestellung 1755 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+11.83 EUR
10+10.69 EUR
25+10.2 EUR
100+8.85 EUR
250+8.46 EUR
500+7.71 EUR
1000+6.71 EUR
Mindestbestellmenge: 2
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BSC0902NSATMA1 BSC0902NS_Rev+2.1.pdf?folderId=db3a304313b8b5a60113cee8763b02d7&fileId=db3a30432c64a60d012cc053cffb38b5
BSC0902NSATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 30V 24A/100A TDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 2.6mOhm @ 30A, 10V
Power Dissipation (Max): 2.5W (Ta), 48W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: PG-TDSON-8-6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 15 V
auf Bestellung 15000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5000+0.48 EUR
10000+0.46 EUR
Mindestbestellmenge: 5000
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BSC0902NSATMA1 BSC0902NS_Rev+2.1.pdf?folderId=db3a304313b8b5a60113cee8763b02d7&fileId=db3a30432c64a60d012cc053cffb38b5
BSC0902NSATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 30V 24A/100A TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 2.6mOhm @ 30A, 10V
Power Dissipation (Max): 2.5W (Ta), 48W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: PG-TDSON-8-6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 15 V
auf Bestellung 17278 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
9+2.04 EUR
14+1.29 EUR
100+0.85 EUR
500+0.66 EUR
1000+0.6 EUR
2000+0.56 EUR
Mindestbestellmenge: 9
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BSC0902NSIATMA1 BSC0902NSI_Rev_2.1.pdf?folderId=db3a304313b8b5a60113cee8763b02d7&fileId=db3a30433072cd8f01308ea027703424
BSC0902NSIATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 30V 23A/100A TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 23A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 2.8mOhm @ 30A, 10V
Power Dissipation (Max): 2.5W (Ta), 48W (Tc)
Vgs(th) (Max) @ Id: 2V @ 10mA
Supplier Device Package: PG-TDSON-8-6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 15 V
auf Bestellung 24263 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
10+1.81 EUR
16+1.14 EUR
100+0.75 EUR
500+0.58 EUR
1000+0.53 EUR
2000+0.48 EUR
Mindestbestellmenge: 10
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BSC0901NSATMA1 BSC0901NS_Rev+1.21.pdf?folderId=db3a304313b8b5a60113cee8763b02d7&fileId=db3a30432c64a60d012cbc8040080376
BSC0901NSATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 30V 28A/100A TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 1.9mOhm @ 30A, 10V
Power Dissipation (Max): 2.5W (Ta), 69W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: PG-TDSON-8-5
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2800 pF @ 15 V
auf Bestellung 35612 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
10+1.81 EUR
24+0.74 EUR
100+0.61 EUR
500+0.59 EUR
1000+0.56 EUR
2000+0.53 EUR
Mindestbestellmenge: 10
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BSC091N03MSCG INFNS13697-1.pdf?t.download=true&u=5oefqw
BSC091N03MSCG
Hersteller: Infineon Technologies
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Part Status: Active
auf Bestellung 15000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1250+0.4 EUR
Mindestbestellmenge: 1250
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BSC0908NS INFNS27230-1.pdf?t.download=true&u=5oefqw
BSC0908NS
Hersteller: Infineon Technologies
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Part Status: Active
auf Bestellung 6400 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
904+0.55 EUR
Mindestbestellmenge: 904
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XC2060N40F80LRABKXUMA1
Hersteller: Infineon Technologies
Description: IC MCU 16BIT FLASH
Packaging: Tape & Reel (TR)
Part Status: Not For New Designs
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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XC2060N40F80LAAKXUMA1 Product_Cat_3-10-14.pdf
XC2060N40F80LAAKXUMA1
Hersteller: Infineon Technologies
Description: IC MCU 16/32B 320KB FLSH 100LQFP
Produkt ist nicht verfügbar
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IPD650P06NMATMA1 Infineon-IPD650P06NM-DS-v02_00-EN.pdf?fileId=5546d46269e1c019016a03e2db2100b1
IPD650P06NMATMA1
Hersteller: Infineon Technologies
Description: MOSFET P-CH 60V 22A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
Rds On (Max) @ Id, Vgs: 65mOhm @ 22A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1.04mA
Supplier Device Package: PG-TO252-3-313
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 30 V
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2500+0.9 EUR
5000+0.84 EUR
Mindestbestellmenge: 2500
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IPD650P06NMATMA1 Infineon-IPD650P06NM-DS-v02_00-EN.pdf?fileId=5546d46269e1c019016a03e2db2100b1
IPD650P06NMATMA1
Hersteller: Infineon Technologies
Description: MOSFET P-CH 60V 22A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
Rds On (Max) @ Id, Vgs: 65mOhm @ 22A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1.04mA
Supplier Device Package: PG-TO252-3-313
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 30 V
auf Bestellung 7154 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
6+3.17 EUR
10+2.02 EUR
100+1.37 EUR
500+1.09 EUR
1000+1.03 EUR
Mindestbestellmenge: 6
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BC807-16WE6327 INFNS11647-1.pdf?t.download=true&u=5oefqw
BC807-16WE6327
Hersteller: Infineon Technologies
Description: TRANS PNP 45V 0.5A PG-SOT23-3-11
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 1V
Frequency - Transition: 200MHz
Supplier Device Package: PG-SOT23-3-11
Part Status: Active
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 250 mW
auf Bestellung 90000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
13172+0.032 EUR
Mindestbestellmenge: 13172
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BC80716E6327 INFNS11647-1.pdf?t.download=true&u=5oefqw
BC80716E6327
Hersteller: Infineon Technologies
Description: TRANS PNP 45V 0.5A PG-SOT23-3-11
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 1V
Frequency - Transition: 200MHz
Supplier Device Package: PG-SOT23-3-11
Part Status: Active
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 330 mW
auf Bestellung 45000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
10377+0.049 EUR
Mindestbestellmenge: 10377
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IPT059N15N3ATMA1 IPT059N15N3+G_Rev1.1.pdf?folderId=db3a304326623792012669f6bee2224b&fileId=db3a30433e9d5d11013e9e62778d0185
IPT059N15N3ATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 150V 155A 8HSOF
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 155A (Tc)
Rds On (Max) @ Id, Vgs: 5.9mOhm @ 150A, 10V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 4V @ 270µA
Supplier Device Package: PG-HSOF-8-1
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 92 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7200 pF @ 75 V
auf Bestellung 2544 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+8.99 EUR
10+6.02 EUR
100+4.33 EUR
500+4.27 EUR
Mindestbestellmenge: 2
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CWM60FN
Hersteller: Infineon Technologies
Description: CWM60FN - RECTIFIER DIODE
Produkt ist nicht verfügbar
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SPA08N80C3 INFN-S-A0004583436-1.pdf?t.download=true&u=5oefqw
SPA08N80C3
Hersteller: Infineon Technologies
Description: SPA08N80 - 800V COOLMOS N-CHANNE
Produkt ist nicht verfügbar
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SPP08N80C3 Infineon-SPP08N80C3-DS-v02_91-en.pdf?fileId=db3a30432313ff5e0123a905a6005c8a
SPP08N80C3
Hersteller: Infineon Technologies
Description: SPP08N80 - 800V COOLMOS N-CHANNE
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 650mOhm @ 5.1A, 10V
Power Dissipation (Max): 104W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 470µA
Supplier Device Package: PG-TO220-3-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 100 V
Produkt ist nicht verfügbar
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IFX30081LDVGRNXUMA1 Infineon-High-Performance-Industrial-Linear-Voltage-Regulators-PB-v01_00-EN.pdf?fileId=5546d4625607bd13015659ef06a40d5f
IFX30081LDVGRNXUMA1
Hersteller: Infineon Technologies
Description: IC REG LINEAR 50MA TSON-10
Produkt ist nicht verfügbar
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TLE4206-2G Infineon-TLE4206-2G-DS-v01_03-EN.pdf?fileId=5546d4625a888733015a8a3f58793f40
TLE4206-2G
Hersteller: Infineon Technologies
Description: TLE4206 - SERVO AND STEPPER MOTO
Packaging: Bulk
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 800mA
Interface: Parallel
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge (2)
Voltage - Supply: 8V ~ 18V
Applications: Automotive
Technology: Bipolar
Voltage - Load: 8V ~ 18V
Supplier Device Package: PG-DSO-14-22
Motor Type - AC, DC: Servo DC
Part Status: Active
Produkt ist nicht verfügbar
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IPBE65R075CFD7AATMA1 Infineon-IPBE65R075CFD7A-DataSheet-v02_01-EN.pdf?fileId=5546d46270c4f93e0170f32a7a137c8a
IPBE65R075CFD7AATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 650V 32A TO263-7
Packaging: Tape & Reel (TR)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab), TO-263CB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 32A (Tc)
Rds On (Max) @ Id, Vgs: 75mOhm @ 16.4A, 10V
Power Dissipation (Max): 171W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 820µA
Supplier Device Package: PG-TO263-7-3-10
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3288 pF @ 400 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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BFP450 INFNS30285-1.pdf?t.download=true&u=5oefqw
BFP450
Hersteller: Infineon Technologies
Description: RF SMALL SIGNAL BIPOLAR TRANSIST
Packaging: Bulk
Part Status: Active
auf Bestellung 118871 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
945+0.48 EUR
Mindestbestellmenge: 945
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PEB4265-2TV1.1 INTL-S-A0006019977-1.pdf?t.download=true&u=5oefqw
Hersteller: Infineon Technologies
Description: DUSLIC DUAL CHANNEL SUBSCRIBER L
Packaging: Bulk
Part Status: Active
auf Bestellung 769 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
64+7.89 EUR
Mindestbestellmenge: 64
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SPU02N60C3 Infineon-SPD_U02N60C3-DS-v02_06-EN.pdf?fileId=db3a304412b407950112b42d79214883
Hersteller: Infineon Technologies
Description: SPU02N60 - 600V COOLMOS N-CHANNE
Packaging: Bulk
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.8A (Tc)
Rds On (Max) @ Id, Vgs: 3Ohm @ 1.1A, 10V
Power Dissipation (Max): 25W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 80µA
Supplier Device Package: PG-TO-251-3-21
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 12.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 200 pF @ 25 V
Produkt ist nicht verfügbar
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