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TLS202B1MBV33HTSA1 TLS202B1MBV33HTSA1 Infineon Technologies infineon-tls202b1mbv33-datasheet-en.pdf Description: IC REG LINEAR 3.3V 150MA SCT595
Packaging: Cut Tape (CT)
Package / Case: 6-SMD (5 Leads), Gull Wing
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 150mA
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 75 µA
Voltage - Input (Max): 18V
Number of Regulators: 1
Supplier Device Package: PG-SCT595-5-1
Voltage - Output (Min/Fixed): 3.3V
Part Status: Active
PSRR: 63dB (10kHz)
Voltage Dropout (Max): 0.57V @ 150mA
Protection Features: Over Current, Over Temperature, Short Circuit
Current - Supply (Max): 200 µA
Grade: Automotive
Qualification: AEC-Q100
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11+1.96 EUR
15+1.42 EUR
25+1.27 EUR
100+1.12 EUR
250+1.05 EUR
500+1.01 EUR
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IR3566BMTRPBF IR3566BMTRPBF Infineon Technologies pb-ir3566b.pdf?fileId=5546d462533600a40153568028fe28eb Description: IC REG CTRLR INTEL 2OUT 48QFN
Operating Temperature: -40°C ~ 85°C
Voltage - Input: 3.3V
Number of Outputs: 2
Mounting Type: Surface Mount
Package / Case: 48-VFQFN Exposed Pad
Packaging: Tape & Reel (TR)
Supplier Device Package: 48-QFN (6x6)
Applications: Controller, Intel VR12, VR12.5, AMD SVI1, SVI2
Produkt ist nicht verfügbar
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IR3566BMTRPBF IR3566BMTRPBF Infineon Technologies pb-ir3566b.pdf?fileId=5546d462533600a40153568028fe28eb Description: IC REG CTRLR INTEL 2OUT 48QFN
Supplier Device Package: 48-QFN (6x6)
Applications: Controller, Intel VR12, VR12.5, AMD SVI1, SVI2
Operating Temperature: -40°C ~ 85°C
Voltage - Input: 3.3V
Number of Outputs: 2
Mounting Type: Surface Mount
Package / Case: 48-VFQFN Exposed Pad
Packaging: Cut Tape (CT)
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2+14.08 EUR
10+12.72 EUR
25+12.14 EUR
100+10.53 EUR
250+10.07 EUR
500+9.17 EUR
1000+7.98 EUR
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BSC0902NSATMA1 BSC0902NSATMA1 Infineon Technologies BSC0902NS_Rev+2.1.pdf?folderId=db3a304313b8b5a60113cee8763b02d7&fileId=db3a30432c64a60d012cc053cffb38b5 Description: MOSFET N-CH 30V 24A/100A TDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 2.6mOhm @ 30A, 10V
Power Dissipation (Max): 2.5W (Ta), 48W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: PG-TDSON-8-6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 15 V
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BSC0902NSATMA1 BSC0902NSATMA1 Infineon Technologies BSC0902NS_Rev+2.1.pdf?folderId=db3a304313b8b5a60113cee8763b02d7&fileId=db3a30432c64a60d012cc053cffb38b5 Description: MOSFET N-CH 30V 24A/100A TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 2.6mOhm @ 30A, 10V
Power Dissipation (Max): 2.5W (Ta), 48W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: PG-TDSON-8-6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 15 V
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9+2.43 EUR
14+1.54 EUR
100+1.01 EUR
500+0.79 EUR
1000+0.71 EUR
2000+0.67 EUR
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BSC0902NSIATMA1 BSC0902NSIATMA1 Infineon Technologies BSC0902NSI_Rev_2.1.pdf?folderId=db3a304313b8b5a60113cee8763b02d7&fileId=db3a30433072cd8f01308ea027703424 Description: MOSFET N-CH 30V 23A/100A TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 23A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 2.8mOhm @ 30A, 10V
Power Dissipation (Max): 2.5W (Ta), 48W (Tc)
Vgs(th) (Max) @ Id: 2V @ 10mA
Supplier Device Package: PG-TDSON-8-6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 15 V
auf Bestellung 24263 Stücke:
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10+2.15 EUR
16+1.36 EUR
100+0.89 EUR
500+0.69 EUR
1000+0.63 EUR
2000+0.57 EUR
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BSC0901NSATMA1 BSC0901NSATMA1 Infineon Technologies BSC0901NS_Rev+1.21.pdf?folderId=db3a304313b8b5a60113cee8763b02d7&fileId=db3a30432c64a60d012cbc8040080376 Description: MOSFET N-CH 30V 28A/100A TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 1.9mOhm @ 30A, 10V
Power Dissipation (Max): 2.5W (Ta), 69W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: PG-TDSON-8-5
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2800 pF @ 15 V
auf Bestellung 25266 Stücke:
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7+3.47 EUR
10+2.2 EUR
100+1.48 EUR
500+1.17 EUR
1000+1.07 EUR
2000+0.99 EUR
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BSC091N03MSCG BSC091N03MSCG Infineon Technologies INFNS13697-1.pdf?t.download=true&u=5oefqw Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Part Status: Active
auf Bestellung 15000 Stücke:
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1250+0.48 EUR
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BSC0908NS BSC0908NS Infineon Technologies INFNS27230-1.pdf?t.download=true&u=5oefqw Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Part Status: Active
auf Bestellung 6400 Stücke:
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XC2060N40F80LRABKXUMA1 Infineon Technologies Description: IC MCU 16BIT FLASH
Packaging: Tape & Reel (TR)
Part Status: Not For New Designs
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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XC2060N40F80LAAKXUMA1 XC2060N40F80LAAKXUMA1 Infineon Technologies Product_Cat_3-10-14.pdf Description: IC MCU 16/32B 320KB FLSH 100LQFP
Produkt ist nicht verfügbar
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IPD650P06NMATMA1 IPD650P06NMATMA1 Infineon Technologies Infineon-IPD650P06NM-DS-v02_00-EN.pdf?fileId=5546d46269e1c019016a03e2db2100b1 Description: MOSFET P-CH 60V 22A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
Rds On (Max) @ Id, Vgs: 65mOhm @ 22A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1.04mA
Supplier Device Package: PG-TO252-3-313
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 30 V
auf Bestellung 5000 Stücke:
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2500+1.15 EUR
5000+1.08 EUR
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IPD650P06NMATMA1 IPD650P06NMATMA1 Infineon Technologies Infineon-IPD650P06NM-DS-v02_00-EN.pdf?fileId=5546d46269e1c019016a03e2db2100b1 Description: MOSFET P-CH 60V 22A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
Rds On (Max) @ Id, Vgs: 65mOhm @ 22A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1.04mA
Supplier Device Package: PG-TO252-3-313
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 30 V
auf Bestellung 6161 Stücke:
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6+4.06 EUR
10+2.59 EUR
100+1.75 EUR
500+1.39 EUR
1000+1.27 EUR
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BC807-16WE6327 BC807-16WE6327 Infineon Technologies INFNS11647-1.pdf?t.download=true&u=5oefqw Description: TRANS PNP 45V 0.5A PG-SOT23-3-11
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 1V
Frequency - Transition: 200MHz
Supplier Device Package: PG-SOT23-3-11
Part Status: Active
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 250 mW
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BC80716E6327 BC80716E6327 Infineon Technologies INFNS11647-1.pdf?t.download=true&u=5oefqw Description: TRANS PNP 45V 0.5A PG-SOT23-3-11
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 1V
Frequency - Transition: 200MHz
Supplier Device Package: PG-SOT23-3-11
Part Status: Active
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 330 mW
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7059+0.071 EUR
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IPT059N15N3ATMA1 IPT059N15N3ATMA1 Infineon Technologies IPT059N15N3+G_Rev1.1.pdf?folderId=db3a304326623792012669f6bee2224b&fileId=db3a30433e9d5d11013e9e62778d0185 Description: MOSFET N-CH 150V 155A 8HSOF
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 155A (Tc)
Rds On (Max) @ Id, Vgs: 5.9mOhm @ 150A, 10V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 4V @ 270µA
Supplier Device Package: PG-HSOF-8-1
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 92 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7200 pF @ 75 V
auf Bestellung 1228 Stücke:
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2+10.78 EUR
10+7.2 EUR
100+5.18 EUR
500+4.71 EUR
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CWM60FN Infineon Technologies Description: CWM60FN - RECTIFIER DIODE
Produkt ist nicht verfügbar
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SPA08N80C3 SPA08N80C3 Infineon Technologies INFN-S-A0004583436-1.pdf?t.download=true&u=5oefqw Description: SPA08N80 - 800V COOLMOS N-CHANNE
Produkt ist nicht verfügbar
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SPP08N80C3 SPP08N80C3 Infineon Technologies Infineon-SPP08N80C3-DS-v02_91-en.pdf?fileId=db3a30432313ff5e0123a905a6005c8a Description: SPP08N80 - 800V COOLMOS N-CHANNE
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 650mOhm @ 5.1A, 10V
Power Dissipation (Max): 104W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 470µA
Supplier Device Package: PG-TO220-3-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 100 V
Produkt ist nicht verfügbar
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IFX30081LDVGRNXUMA1 IFX30081LDVGRNXUMA1 Infineon Technologies Infineon-High-Performance-Industrial-Linear-Voltage-Regulators-PB-v01_00-EN.pdf?fileId=5546d4625607bd13015659ef06a40d5f Description: IC REG LINEAR 50MA TSON-10
Produkt ist nicht verfügbar
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TLE4206-2G TLE4206-2G Infineon Technologies Infineon-TLE4206-2G-DS-v01_03-EN.pdf?fileId=5546d4625a888733015a8a3f58793f40 Description: TLE4206 - SERVO AND STEPPER MOTO
Packaging: Bulk
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 800mA
Interface: Parallel
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge (2)
Voltage - Supply: 8V ~ 18V
Applications: Automotive
Technology: Bipolar
Voltage - Load: 8V ~ 18V
Supplier Device Package: PG-DSO-14-22
Motor Type - AC, DC: Servo DC
Part Status: Active
Produkt ist nicht verfügbar
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IPBE65R075CFD7AATMA1 IPBE65R075CFD7AATMA1 Infineon Technologies Infineon-IPBE65R075CFD7A-DataSheet-v02_01-EN.pdf?fileId=5546d46270c4f93e0170f32a7a137c8a Description: MOSFET N-CH 650V 32A TO263-7
Grade: Automotive
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 3288 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: PG-TO263-7-3-10
Vgs(th) (Max) @ Id: 4.5V @ 820µA
Power Dissipation (Max): 171W (Tc)
Rds On (Max) @ Id, Vgs: 75mOhm @ 16.4A, 10V
Current - Continuous Drain (Id) @ 25°C: 32A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-7, D2PAK (6 Leads + Tab), TO-263CB
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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BFP450 BFP450 Infineon Technologies INFNS30285-1.pdf?t.download=true&u=5oefqw Description: RF SMALL SIGNAL BIPOLAR TRANSIST
Packaging: Bulk
Part Status: Active
auf Bestellung 118871 Stücke:
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945+0.57 EUR
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PEB4265-2TV1.1 Infineon Technologies INTL-S-A0006019977-1.pdf?t.download=true&u=5oefqw Description: DUSLIC DUAL CHANNEL SUBSCRIBER L
Part Status: Active
Packaging: Bulk
auf Bestellung 769 Stücke:
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64+9.39 EUR
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SPU02N60C3 Infineon Technologies Infineon-SPD_U02N60C3-DS-v02_06-EN.pdf?fileId=db3a304412b407950112b42d79214883 Description: SPU02N60 - 600V COOLMOS N-CHANNE
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Packaging: Bulk
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PG-TO-251-3-21
Vgs(th) (Max) @ Id: 3.9V @ 80µA
Power Dissipation (Max): 25W (Tc)
Rds On (Max) @ Id, Vgs: 3Ohm @ 1.1A, 10V
Current - Continuous Drain (Id) @ 25°C: 1.8A (Tc)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 200 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 12.5 nC @ 10 V
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IDP08E65D1XKSA1 IDP08E65D1XKSA1 Infineon Technologies IDP08E65D1_1_1.pdf?folderId=db3a304314dca38901151224afae0c96&fileId=db3a30433d6895c8013d68d2c3c80025 Description: DIODE STANDARD 650V 8A TO2202
Current - Average Rectified (Io): 8A
Technology: Standard
Reverse Recovery Time (trr): 80 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-2
Packaging: Bulk
Current - Reverse Leakage @ Vr: 40 µA @ 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 8 A
Voltage - DC Reverse (Vr) (Max): 650 V
Operating Temperature - Junction: -40°C ~ 175°C
Supplier Device Package: TO-220-2
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373+1.44 EUR
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IPB026N06NATMA1 IPB026N06NATMA1 Infineon Technologies IPB026N06N_Rev2.0.pdf?folderId=db3a304313b8b5a60113cee8763b02d7&fileId=db3a3043372d5cc8013754c7b2a74f7c Description: MOSFET N-CH 60V 25A/100A D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 4100 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Part Status: Active
Supplier Device Package: PG-TO263-3
Vgs(th) (Max) @ Id: 2.8V @ 75µA
Power Dissipation (Max): 3W (Ta), 136W (Tc)
Rds On (Max) @ Id, Vgs: 2.6mOhm @ 100A, 10V
Current - Continuous Drain (Id) @ 25°C: 25A (Ta), 100A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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IPB026N06NATMA1 IPB026N06NATMA1 Infineon Technologies IPB026N06N_Rev2.0.pdf?folderId=db3a304313b8b5a60113cee8763b02d7&fileId=db3a3043372d5cc8013754c7b2a74f7c Description: MOSFET N-CH 60V 25A/100A D2PAK
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Part Status: Active
Supplier Device Package: PG-TO263-3
Vgs(th) (Max) @ Id: 2.8V @ 75µA
Power Dissipation (Max): 3W (Ta), 136W (Tc)
Rds On (Max) @ Id, Vgs: 2.6mOhm @ 100A, 10V
Current - Continuous Drain (Id) @ 25°C: 25A (Ta), 100A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 4100 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
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100+4.31 EUR
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IPP060N06N IPP060N06N Infineon Technologies INFNS19758-1.pdf?t.download=true&u=5oefqw Description: IPP060N06 - 12V-300V N-CHANNEL P
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IPT60R035CFD7XTMA1 IPT60R035CFD7XTMA1 Infineon Technologies Infineon-IPT60R035CFD7-DataSheet-v02_01-EN.pdf?fileId=5546d46271bf4f920171df2a2c2130e6 Description: MOSFET N-CH 600V 67A 8HSOF
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 67A (Tc)
Rds On (Max) @ Id, Vgs: 35mOhm @ 24.9A, 10V
Power Dissipation (Max): 351W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1.25mA
Supplier Device Package: PG-HSOF-8-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 109 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4354 pF @ 400 V
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TLE49762KHTSA1 TLE49762KHTSA1 Infineon Technologies Infineon-TLE4976_2K-DS-v01_02-en.pdf?folderId=5546d4694909da4801490a07012f053b&fileId=db3a30432c59a87e012c5e9c3dc5351c Description: MAGNETIC SWITCH UNIPOLAR SC59
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TLE49762KHTSA1 TLE49762KHTSA1 Infineon Technologies Infineon-TLE4976_2K-DS-v01_02-en.pdf?folderId=5546d4694909da4801490a07012f053b&fileId=db3a30432c59a87e012c5e9c3dc5351c Description: MAGNETIC SWITCH UNIPOLAR SC59
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TLE4976-2K TLE4976-2K Infineon Technologies Infineon-TLE4976_2K-DS-v01_02-en.pdf?fileId=db3a30432c59a87e012c5e9c3dc5351c Description: TLE4976 - HALL SWITCH
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IPP60R385CP IPP60R385CP Infineon Technologies INFNS15867-1.pdf?t.download=true&u=5oefqw Description: MOSFET N-CH 600V 9A TO220-3-1
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 385mOhm @ 5.2A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 340µA
Supplier Device Package: PG-TO220-3-1
Part Status: Active
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 790 pF @ 100 V
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SP001017058 Infineon Technologies Infineon-IPX60R380P6-DS-v02_03-EN.pdf?fileId=db3a3043416e106e01416e9316410203 Description: IPP60R380P6 - 600V N-CHANNEL
Input Capacitance (Ciss) (Max) @ Vds: 877 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PG-TO220-3-1
Vgs(th) (Max) @ Id: 4.5V @ 320µA
Power Dissipation (Max): 83W (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 3.8A, 10V
Current - Continuous Drain (Id) @ 25°C: 10.6A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Bulk
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BAS116E6433 BAS116E6433 Infineon Technologies SIEMD095-236.pdf?t.download=true&u=5oefqw Description: DIODE GEN PURP 80V 250MA SOT23-3
Supplier Device Package: SOT-23-3
Current - Average Rectified (Io): 250mA
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 1.5 µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Bulk
Current - Reverse Leakage @ Vr: 5 nA @ 75 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Voltage - DC Reverse (Vr) (Max): 80 V
Part Status: Active
Operating Temperature - Junction: 150°C (Max)
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BAS116E6327 BAS116E6327 Infineon Technologies INFNS10816-1.pdf?t.download=true&u=5oefqw Description: RECTIFIER DIODE, 0.25A
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.5 µs
Technology: Standard
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Current - Average Rectified (Io): 250mA
Supplier Device Package: PG-SOT23
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 5 nA @ 75 V
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AUIR3241SBOARDB2BTOBO1 AUIR3241SBOARDB2BTOBO1 Infineon Technologies Infineon-AUIR324_demoboard-UserManual-v02_00-EN.pdf?fileId=5546d46265f064ff016667e5d4133c3f Description: EVAL BOARD FOR AUIR3241S
Packaging: Box
Function: Power Distribution Switch (Load Switch)
Type: Power Management
Contents: Board(s)
Utilized IC / Part: AUIR3241S, AUIR3242S
Supplied Contents: Board(s)
Part Status: Active
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BAW56WE6433 BAW56WE6433 Infineon Technologies INFNS11183-1.pdf?t.download=true&u=5oefqw Description: DIODE ARR GP 80V 200MA SOT323-3
Packaging: Bulk
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 200mA (DC)
Supplier Device Package: PG-SOT323-3
Operating Temperature - Junction: 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 150 nA @ 70 V
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DEMO2PCS01GTOBO1 Infineon Technologies Description: EVAL BOARD FOR ICE2PCS01G
Packaging: Box
Function: Power Factor Correction
Type: Power Management
Contents: Board(s)
Utilized IC / Part: ICE2PCS01G
Supplied Contents: Board(s)
Part Status: Active
Produkt ist nicht verfügbar
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BGA915N7E6327XTMA1 BGA915N7E6327XTMA1 Infineon Technologies INFNS16698-1.pdf?t.download=true&u=5oefqw Description: IC AMP UMTS 800MHZ/900MHZ TSLP16
Packaging: Bulk
Package / Case: 16-XFQFN Exposed Pad
Mounting Type: Surface Mount
Frequency: 800MHz, 900MHz, 1.8GHz, 1.9GHz, 2.1GHz
RF Type: UMTS
Voltage - Supply: 2.7V ~ 3V
Gain: 16.1dB
Current - Supply: 3.4mA
Noise Figure: 1.1dB
P1dB: -6dBm
Supplier Device Package: TSLP-16-1
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BGB717L7ESDE6327 BGB717L7ESDE6327 Infineon Technologies INFNS27657-1.pdf?t.download=true&u=5oefqw Description: IC AMP FM 76MHZ-108MHZ TSLP7-1
Packaging: Bulk
Package / Case: 6-XFDFN Exposed Pad
Mounting Type: Surface Mount
Frequency: 76MHz ~ 108MHz
RF Type: FM
Voltage - Supply: 1.8V ~ 4V
Gain: 12dB
Current - Supply: 3mA
Noise Figure: 1dB
P1dB: -5.5dBm
Test Frequency: 100MHz
Supplier Device Package: PG-TSLP-7-1
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BGA715L7E6327 Infineon Technologies INFNS13467-1.pdf?t.download=true&u=5oefqw Description: IC AMP UMTS 1.9/2.1GHZ TSLP7-1
Packaging: Bulk
Package / Case: 6-XFDFN Exposed Pad
Mounting Type: Surface Mount
Frequency: 1.9GHz, 2.1GHz
RF Type: UMTS
Voltage - Supply: 2.6V ~ 3V
Gain: 17dB
Current - Supply: 3.6mA
Noise Figure: 1.1dB
P1dB: -8dBm
Test Frequency: 2.1GHz
Supplier Device Package: PG-TSLP-7-1
Part Status: Active
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S29GL512T11DHIV20 S29GL512T11DHIV20 Infineon Technologies Infineon-S29GL01GT_S29GL512T_1-Gb_(128_MB)_512-Mb_(64_MB)_GL-T_MirrorBit_Eclipse_Flash-DataSheet-v13_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed2abb34fce&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_in Description: IC FLASH 512MBIT PARALLEL 64FBGA
Packaging: Tray
Package / Case: 64-LBGA
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.65V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 64-FBGA (9x9)
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 110 ns
Memory Organization: 64M x 8
DigiKey Programmable: Not Verified
auf Bestellung 2177 Stücke:
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10+14.67 EUR
25+14.22 EUR
40+13.98 EUR
80+13.65 EUR
260+13.41 EUR
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S29GL512T11TFV010 S29GL512T11TFV010 Infineon Technologies Infineon-S29GL01GT_S29GL512T_1-Gb_(128_MB)_512-Mb_(64_MB)_GL-T_MirrorBit_Eclipse_Flash-DataSheet-v13_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed2abb34fce&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_in Description: IC FLASH 512MBIT PARALLEL 56TSOP
Packaging: Tray
Package / Case: 56-TFSOP (0.724", 18.40mm Width)
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 56-TSOP
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 110 ns
Memory Organization: 64M x 8
DigiKey Programmable: Not Verified
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S29GL512T12TFN010 S29GL512T12TFN010 Infineon Technologies Infineon-S29GL01GT_S29GL512T_1-Gb_(128_MB)_512-Mb_(64_MB)_GL-T_MirrorBit_Eclipse_Flash-DataSheet-v13_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed2abb34fce&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_in Description: IC FLASH 512MBIT PARALLEL 56TSOP
Packaging: Tray
Package / Case: 56-TFSOP (0.724", 18.40mm Width)
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 56-TSOP
Part Status: Active
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 120 ns
Memory Organization: 64M x 8
DigiKey Programmable: Not Verified
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2+19.98 EUR
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25+17.98 EUR
91+17.17 EUR
182+17.12 EUR
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SLE 4418 M2.2 Infineon Technologies SLE4418%2C%20SLE4428.pdf Description: IC EEPROM 1KBYTE M2.2 PKG
Packaging: Bulk
Package / Case: M2.2 Chip Card Module
Applications: Security
Supplier Device Package: M2.2 Chip Card Module
DigiKey Programmable: Not Verified
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SPW16N50C3 SPW16N50C3 Infineon Technologies Infineon-SPW16N50C3-DS-v02_05-en.pdf?fileId=db3a304412b407950112b42d2eca4824 Description: SPW16N50 - 500V COOLMOS N-CHANNE
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 66 nC @ 10 V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PG-TO247-3-21
Vgs(th) (Max) @ Id: 3.9V @ 675µA
Power Dissipation (Max): 160W (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Bulk
Drain to Source Voltage (Vdss): 500 V
Vgs (Max): ±20V
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SPA16N50C3 SPA16N50C3 Infineon Technologies INFNS14199-1.pdf?t.download=true&u=5oefqw Description: SPA16N50 - 500V COOLMOS N-CHANNE
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 25 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PG-TO220-3-111
Vgs(th) (Max) @ Id: 3.9V @ 675µA
Power Dissipation (Max): 34W (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Bulk
Gate Charge (Qg) (Max) @ Vgs: 66 nC @ 10 V
Drain to Source Voltage (Vdss): 500 V
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BGA420H6327 BGA420H6327 Infineon Technologies INFNS11594-1.pdf?t.download=true&u=5oefqw Description: IC RF AMP GPS SOT343-4
Packaging: Bulk
Package / Case: SC-82A, SOT-343
Mounting Type: Surface Mount
RF Type: General Purpose
Voltage - Supply: 3V ~ 6V
Gain: 13dB
Current - Supply: 6.7mA
Noise Figure: 2.3dB
P1dB: -2.5dBm
Test Frequency: 1GHz
Supplier Device Package: PG-SOT343-4-1
Part Status: Active
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IKW25T120 IKW25T120 Infineon Technologies INFNS27302-1.pdf?t.download=true&u=5oefqw description Description: IKW25T120 - DISCRETE IGBT WITH A
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 200 ns
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 25A
Supplier Device Package: PG-TO247-3-21
IGBT Type: NPT, Trench Field Stop
Td (on/off) @ 25°C: 50ns/560ns
Switching Energy: 2mJ (on), 2.2mJ (off)
Test Condition: 600V, 25A, 22Ohm, 15V
Gate Charge: 155 nC
Part Status: Active
Current - Collector (Ic) (Max): 50 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 75 A
Power - Max: 190 W
Produkt ist nicht verfügbar
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1IRF3710PBF 1IRF3710PBF Infineon Technologies IRSDS11475-1.pdf?t.download=true&u=5oefqw Description: IRF3710 - 100V HEXFET N-CHANNEL
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 57A (Tc)
Rds On (Max) @ Id, Vgs: 23mOhm @ 28A, 10V
Power Dissipation (Max): 200W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3130 pF @ 25 V
Produkt ist nicht verfügbar
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RF3710PBF RF3710PBF Infineon Technologies IRSDS11475-1.pdf?t.download=true&u=5oefqw Description: IRF3710 - N-CHANNEL POWER MOSFET
Packaging: Bulk
Part Status: Active
Produkt ist nicht verfügbar
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IPD80R280P7ATMA1 IPD80R280P7ATMA1 Infineon Technologies Infineon-IPD80R280P7-DS-v02_00-EN.pdf?fileId=5546d46255a50e820155da39b3dc5a9b Description: MOSFET N-CH 800V 17A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 7.2A, 10V
Power Dissipation (Max): 101W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 360µA
Supplier Device Package: PG-TO252-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 500 V
auf Bestellung 5906 Stücke:
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10+4.86 EUR
100+3.4 EUR
500+2.81 EUR
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IPD80R4K5P7ATMA1 IPD80R4K5P7ATMA1 Infineon Technologies Infineon-IPD80R4K5P7-DS-v02_00-EN.pdf?fileId=5546d46255a50e820155da0c589b5949 Description: MOSFET N-CH 800V 1.5A TO252
Rds On (Max) @ Id, Vgs: 4.5Ohm @ 400mA, 10V
Current - Continuous Drain (Id) @ 25°C: 1.5A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 80 pF @ 500 V
Gate Charge (Qg) (Max) @ Vgs: 4 nC @ 10 V
Drain to Source Voltage (Vdss): 800 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: PG-TO252-3
Vgs(th) (Max) @ Id: 3.5V @ 200µA
Power Dissipation (Max): 13W (Tc)
Produkt ist nicht verfügbar
 Mindestbestellmenge: 2500 Stücke
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IPD80R4K5P7ATMA1 IPD80R4K5P7ATMA1 Infineon Technologies Infineon-IPD80R4K5P7-DS-v02_00-EN.pdf?fileId=5546d46255a50e820155da0c589b5949 Description: MOSFET N-CH 800V 1.5A TO252
Input Capacitance (Ciss) (Max) @ Vds: 80 pF @ 500 V
Gate Charge (Qg) (Max) @ Vgs: 4 nC @ 10 V
Drain to Source Voltage (Vdss): 800 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: PG-TO252-3
Vgs(th) (Max) @ Id: 3.5V @ 200µA
Power Dissipation (Max): 13W (Tc)
Rds On (Max) @ Id, Vgs: 4.5Ohm @ 400mA, 10V
Current - Continuous Drain (Id) @ 25°C: 1.5A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
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SPB07N60C3 SPB07N60C3 Infineon Technologies Infineon-SPB07N60C3-DS-v02_05-en.pdf?fileId=db3a304412b407950112b42df065491f Description: SPB07N60 - 600V COOLMOS N-CHANNE
Input Capacitance (Ciss) (Max) @ Vds: 790 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: PG-TO263-3-2
Vgs(th) (Max) @ Id: 3.9V @ 350µA
Power Dissipation (Max): 83W (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 4.6A, 10V
Current - Continuous Drain (Id) @ 25°C: 7.3A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Bulk
Produkt ist nicht verfügbar
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SPU07N60C3BKMA1 SPU07N60C3BKMA1 Infineon Technologies Infineon-SPD_U07N60C3-DS-v02_07-en.pdf?fileId=db3a30433f1b26e8013f1e7536e102d4 Description: MOSFET N-CH 650V 7.3A TO251-3
Packaging: Bulk
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.3A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 4.6A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 350µA
Supplier Device Package: PG-TO251-3-21
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 790 pF @ 25 V
auf Bestellung 458 Stücke:
Lieferzeit 10-14 Tag (e)
224+2.46 EUR
Mindestbestellmenge: 224 Stücke
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CY7C057V-12BBC CY7C057V-12BBC Infineon Technologies CY7C056V,057V.pdf Description: IC SRAM 1.152MBIT PAR 172FBGA
auf Bestellung 2169 Stücke:
Lieferzeit 10-14 Tag (e)
4+160.96 EUR
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BUZ30AH3045A Infineon Technologies INFNS15132-1.pdf?t.download=true&u=5oefqw Description: BUZ30 - 12V-300V N-CHANNEL POWER
Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 25 V
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: PG-TO263-3-2
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 125W (Tc)
Rds On (Max) @ Id, Vgs: 130mOhm @ 13.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Bulk
Produkt ist nicht verfügbar
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TLS202B1MBV33HTSA1 infineon-tls202b1mbv33-datasheet-en.pdf
TLS202B1MBV33HTSA1
Hersteller: Infineon Technologies
Description: IC REG LINEAR 3.3V 150MA SCT595
Packaging: Cut Tape (CT)
Package / Case: 6-SMD (5 Leads), Gull Wing
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 150mA
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 75 µA
Voltage - Input (Max): 18V
Number of Regulators: 1
Supplier Device Package: PG-SCT595-5-1
Voltage - Output (Min/Fixed): 3.3V
Part Status: Active
PSRR: 63dB (10kHz)
Voltage Dropout (Max): 0.57V @ 150mA
Protection Features: Over Current, Over Temperature, Short Circuit
Current - Supply (Max): 200 µA
Grade: Automotive
Qualification: AEC-Q100
auf Bestellung 941 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
11+1.96 EUR
15+1.42 EUR
25+1.27 EUR
100+1.12 EUR
250+1.05 EUR
500+1.01 EUR
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IR3566BMTRPBF pb-ir3566b.pdf?fileId=5546d462533600a40153568028fe28eb
IR3566BMTRPBF
Hersteller: Infineon Technologies
Description: IC REG CTRLR INTEL 2OUT 48QFN
Operating Temperature: -40°C ~ 85°C
Voltage - Input: 3.3V
Number of Outputs: 2
Mounting Type: Surface Mount
Package / Case: 48-VFQFN Exposed Pad
Packaging: Tape & Reel (TR)
Supplier Device Package: 48-QFN (6x6)
Applications: Controller, Intel VR12, VR12.5, AMD SVI1, SVI2
Produkt ist nicht verfügbar
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IR3566BMTRPBF pb-ir3566b.pdf?fileId=5546d462533600a40153568028fe28eb
IR3566BMTRPBF
Hersteller: Infineon Technologies
Description: IC REG CTRLR INTEL 2OUT 48QFN
Supplier Device Package: 48-QFN (6x6)
Applications: Controller, Intel VR12, VR12.5, AMD SVI1, SVI2
Operating Temperature: -40°C ~ 85°C
Voltage - Input: 3.3V
Number of Outputs: 2
Mounting Type: Surface Mount
Package / Case: 48-VFQFN Exposed Pad
Packaging: Cut Tape (CT)
auf Bestellung 1755 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2+14.08 EUR
10+12.72 EUR
25+12.14 EUR
100+10.53 EUR
250+10.07 EUR
500+9.17 EUR
1000+7.98 EUR
Mindestbestellmenge: 2 Stücke
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BSC0902NSATMA1 BSC0902NS_Rev+2.1.pdf?folderId=db3a304313b8b5a60113cee8763b02d7&fileId=db3a30432c64a60d012cc053cffb38b5
BSC0902NSATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 30V 24A/100A TDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 2.6mOhm @ 30A, 10V
Power Dissipation (Max): 2.5W (Ta), 48W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: PG-TDSON-8-6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 15 V
auf Bestellung 15000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
5000+0.57 EUR
10000+0.55 EUR
Mindestbestellmenge: 5000 Stücke
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BSC0902NSATMA1 BSC0902NS_Rev+2.1.pdf?folderId=db3a304313b8b5a60113cee8763b02d7&fileId=db3a30432c64a60d012cc053cffb38b5
BSC0902NSATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 30V 24A/100A TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 2.6mOhm @ 30A, 10V
Power Dissipation (Max): 2.5W (Ta), 48W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: PG-TDSON-8-6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 15 V
auf Bestellung 17278 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
9+2.43 EUR
14+1.54 EUR
100+1.01 EUR
500+0.79 EUR
1000+0.71 EUR
2000+0.67 EUR
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BSC0902NSIATMA1 BSC0902NSI_Rev_2.1.pdf?folderId=db3a304313b8b5a60113cee8763b02d7&fileId=db3a30433072cd8f01308ea027703424
BSC0902NSIATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 30V 23A/100A TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 23A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 2.8mOhm @ 30A, 10V
Power Dissipation (Max): 2.5W (Ta), 48W (Tc)
Vgs(th) (Max) @ Id: 2V @ 10mA
Supplier Device Package: PG-TDSON-8-6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 15 V
auf Bestellung 24263 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
10+2.15 EUR
16+1.36 EUR
100+0.89 EUR
500+0.69 EUR
1000+0.63 EUR
2000+0.57 EUR
Mindestbestellmenge: 10 Stücke
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BSC0901NSATMA1 BSC0901NS_Rev+1.21.pdf?folderId=db3a304313b8b5a60113cee8763b02d7&fileId=db3a30432c64a60d012cbc8040080376
BSC0901NSATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 30V 28A/100A TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 1.9mOhm @ 30A, 10V
Power Dissipation (Max): 2.5W (Ta), 69W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: PG-TDSON-8-5
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2800 pF @ 15 V
auf Bestellung 25266 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
7+3.47 EUR
10+2.2 EUR
100+1.48 EUR
500+1.17 EUR
1000+1.07 EUR
2000+0.99 EUR
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BSC091N03MSCG INFNS13697-1.pdf?t.download=true&u=5oefqw
BSC091N03MSCG
Hersteller: Infineon Technologies
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Part Status: Active
auf Bestellung 15000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1250+0.48 EUR
Mindestbestellmenge: 1250 Stücke
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BSC0908NS INFNS27230-1.pdf?t.download=true&u=5oefqw
BSC0908NS
Hersteller: Infineon Technologies
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Part Status: Active
auf Bestellung 6400 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
904+0.65 EUR
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XC2060N40F80LRABKXUMA1
Hersteller: Infineon Technologies
Description: IC MCU 16BIT FLASH
Packaging: Tape & Reel (TR)
Part Status: Not For New Designs
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
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XC2060N40F80LAAKXUMA1 Product_Cat_3-10-14.pdf
XC2060N40F80LAAKXUMA1
Hersteller: Infineon Technologies
Description: IC MCU 16/32B 320KB FLSH 100LQFP
Produkt ist nicht verfügbar
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IPD650P06NMATMA1 Infineon-IPD650P06NM-DS-v02_00-EN.pdf?fileId=5546d46269e1c019016a03e2db2100b1
IPD650P06NMATMA1
Hersteller: Infineon Technologies
Description: MOSFET P-CH 60V 22A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
Rds On (Max) @ Id, Vgs: 65mOhm @ 22A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1.04mA
Supplier Device Package: PG-TO252-3-313
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 30 V
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2500+1.15 EUR
5000+1.08 EUR
Mindestbestellmenge: 2500 Stücke
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IPD650P06NMATMA1 Infineon-IPD650P06NM-DS-v02_00-EN.pdf?fileId=5546d46269e1c019016a03e2db2100b1
IPD650P06NMATMA1
Hersteller: Infineon Technologies
Description: MOSFET P-CH 60V 22A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
Rds On (Max) @ Id, Vgs: 65mOhm @ 22A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1.04mA
Supplier Device Package: PG-TO252-3-313
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 30 V
auf Bestellung 6161 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
6+4.06 EUR
10+2.59 EUR
100+1.75 EUR
500+1.39 EUR
1000+1.27 EUR
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BC807-16WE6327 INFNS11647-1.pdf?t.download=true&u=5oefqw
BC807-16WE6327
Hersteller: Infineon Technologies
Description: TRANS PNP 45V 0.5A PG-SOT23-3-11
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 1V
Frequency - Transition: 200MHz
Supplier Device Package: PG-SOT23-3-11
Part Status: Active
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 250 mW
auf Bestellung 90000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
13172+0.038 EUR
Mindestbestellmenge: 13172 Stücke
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BC80716E6327 INFNS11647-1.pdf?t.download=true&u=5oefqw
BC80716E6327
Hersteller: Infineon Technologies
Description: TRANS PNP 45V 0.5A PG-SOT23-3-11
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 1V
Frequency - Transition: 200MHz
Supplier Device Package: PG-SOT23-3-11
Part Status: Active
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 330 mW
auf Bestellung 45000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
7059+0.071 EUR
Mindestbestellmenge: 7059 Stücke
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IPT059N15N3ATMA1 IPT059N15N3+G_Rev1.1.pdf?folderId=db3a304326623792012669f6bee2224b&fileId=db3a30433e9d5d11013e9e62778d0185
IPT059N15N3ATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 150V 155A 8HSOF
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 155A (Tc)
Rds On (Max) @ Id, Vgs: 5.9mOhm @ 150A, 10V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 4V @ 270µA
Supplier Device Package: PG-HSOF-8-1
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 92 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7200 pF @ 75 V
auf Bestellung 1228 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2+10.78 EUR
10+7.2 EUR
100+5.18 EUR
500+4.71 EUR
Mindestbestellmenge: 2 Stücke
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CWM60FN
Hersteller: Infineon Technologies
Description: CWM60FN - RECTIFIER DIODE
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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SPA08N80C3 INFN-S-A0004583436-1.pdf?t.download=true&u=5oefqw
SPA08N80C3
Hersteller: Infineon Technologies
Description: SPA08N80 - 800V COOLMOS N-CHANNE
Produkt ist nicht verfügbar
Mindestbestellmenge: 250 Stücke
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SPP08N80C3 Infineon-SPP08N80C3-DS-v02_91-en.pdf?fileId=db3a30432313ff5e0123a905a6005c8a
SPP08N80C3
Hersteller: Infineon Technologies
Description: SPP08N80 - 800V COOLMOS N-CHANNE
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 650mOhm @ 5.1A, 10V
Power Dissipation (Max): 104W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 470µA
Supplier Device Package: PG-TO220-3-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 100 V
Produkt ist nicht verfügbar
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IFX30081LDVGRNXUMA1 Infineon-High-Performance-Industrial-Linear-Voltage-Regulators-PB-v01_00-EN.pdf?fileId=5546d4625607bd13015659ef06a40d5f
IFX30081LDVGRNXUMA1
Hersteller: Infineon Technologies
Description: IC REG LINEAR 50MA TSON-10
Produkt ist nicht verfügbar
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TLE4206-2G Infineon-TLE4206-2G-DS-v01_03-EN.pdf?fileId=5546d4625a888733015a8a3f58793f40
TLE4206-2G
Hersteller: Infineon Technologies
Description: TLE4206 - SERVO AND STEPPER MOTO
Packaging: Bulk
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 800mA
Interface: Parallel
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge (2)
Voltage - Supply: 8V ~ 18V
Applications: Automotive
Technology: Bipolar
Voltage - Load: 8V ~ 18V
Supplier Device Package: PG-DSO-14-22
Motor Type - AC, DC: Servo DC
Part Status: Active
Produkt ist nicht verfügbar
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IPBE65R075CFD7AATMA1 Infineon-IPBE65R075CFD7A-DataSheet-v02_01-EN.pdf?fileId=5546d46270c4f93e0170f32a7a137c8a
IPBE65R075CFD7AATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 650V 32A TO263-7
Grade: Automotive
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 3288 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: PG-TO263-7-3-10
Vgs(th) (Max) @ Id: 4.5V @ 820µA
Power Dissipation (Max): 171W (Tc)
Rds On (Max) @ Id, Vgs: 75mOhm @ 16.4A, 10V
Current - Continuous Drain (Id) @ 25°C: 32A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-7, D2PAK (6 Leads + Tab), TO-263CB
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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BFP450 INFNS30285-1.pdf?t.download=true&u=5oefqw
BFP450
Hersteller: Infineon Technologies
Description: RF SMALL SIGNAL BIPOLAR TRANSIST
Packaging: Bulk
Part Status: Active
auf Bestellung 118871 Stücke:
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AnzahlPrivatkunde
945+0.57 EUR
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PEB4265-2TV1.1 INTL-S-A0006019977-1.pdf?t.download=true&u=5oefqw
Hersteller: Infineon Technologies
Description: DUSLIC DUAL CHANNEL SUBSCRIBER L
Part Status: Active
Packaging: Bulk
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AnzahlPrivatkunde
64+9.39 EUR
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SPU02N60C3 Infineon-SPD_U02N60C3-DS-v02_06-EN.pdf?fileId=db3a304412b407950112b42d79214883
Hersteller: Infineon Technologies
Description: SPU02N60 - 600V COOLMOS N-CHANNE
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Packaging: Bulk
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PG-TO-251-3-21
Vgs(th) (Max) @ Id: 3.9V @ 80µA
Power Dissipation (Max): 25W (Tc)
Rds On (Max) @ Id, Vgs: 3Ohm @ 1.1A, 10V
Current - Continuous Drain (Id) @ 25°C: 1.8A (Tc)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 200 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 12.5 nC @ 10 V
Produkt ist nicht verfügbar
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IDP08E65D1XKSA1 IDP08E65D1_1_1.pdf?folderId=db3a304314dca38901151224afae0c96&fileId=db3a30433d6895c8013d68d2c3c80025
IDP08E65D1XKSA1
Hersteller: Infineon Technologies
Description: DIODE STANDARD 650V 8A TO2202
Current - Average Rectified (Io): 8A
Technology: Standard
Reverse Recovery Time (trr): 80 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-2
Packaging: Bulk
Current - Reverse Leakage @ Vr: 40 µA @ 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 8 A
Voltage - DC Reverse (Vr) (Max): 650 V
Operating Temperature - Junction: -40°C ~ 175°C
Supplier Device Package: TO-220-2
auf Bestellung 5237 Stücke:
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AnzahlPrivatkunde
373+1.44 EUR
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IPB026N06NATMA1 IPB026N06N_Rev2.0.pdf?folderId=db3a304313b8b5a60113cee8763b02d7&fileId=db3a3043372d5cc8013754c7b2a74f7c
IPB026N06NATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 60V 25A/100A D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 4100 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Part Status: Active
Supplier Device Package: PG-TO263-3
Vgs(th) (Max) @ Id: 2.8V @ 75µA
Power Dissipation (Max): 3W (Ta), 136W (Tc)
Rds On (Max) @ Id, Vgs: 2.6mOhm @ 100A, 10V
Current - Continuous Drain (Id) @ 25°C: 25A (Ta), 100A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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IPB026N06NATMA1 IPB026N06N_Rev2.0.pdf?folderId=db3a304313b8b5a60113cee8763b02d7&fileId=db3a3043372d5cc8013754c7b2a74f7c
IPB026N06NATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 60V 25A/100A D2PAK
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Part Status: Active
Supplier Device Package: PG-TO263-3
Vgs(th) (Max) @ Id: 2.8V @ 75µA
Power Dissipation (Max): 3W (Ta), 136W (Tc)
Rds On (Max) @ Id, Vgs: 2.6mOhm @ 100A, 10V
Current - Continuous Drain (Id) @ 25°C: 25A (Ta), 100A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 4100 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
auf Bestellung 936 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3+9.29 EUR
10+6.12 EUR
100+4.31 EUR
500+3.53 EUR
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IPP060N06N INFNS19758-1.pdf?t.download=true&u=5oefqw
IPP060N06N
Hersteller: Infineon Technologies
Description: IPP060N06 - 12V-300V N-CHANNEL P
Produkt ist nicht verfügbar
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IPT60R035CFD7XTMA1 Infineon-IPT60R035CFD7-DataSheet-v02_01-EN.pdf?fileId=5546d46271bf4f920171df2a2c2130e6
IPT60R035CFD7XTMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 600V 67A 8HSOF
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 67A (Tc)
Rds On (Max) @ Id, Vgs: 35mOhm @ 24.9A, 10V
Power Dissipation (Max): 351W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1.25mA
Supplier Device Package: PG-HSOF-8-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 109 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4354 pF @ 400 V
Produkt ist nicht verfügbar
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TLE49762KHTSA1 Infineon-TLE4976_2K-DS-v01_02-en.pdf?folderId=5546d4694909da4801490a07012f053b&fileId=db3a30432c59a87e012c5e9c3dc5351c
TLE49762KHTSA1
Hersteller: Infineon Technologies
Description: MAGNETIC SWITCH UNIPOLAR SC59
Produkt ist nicht verfügbar
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TLE49762KHTSA1 Infineon-TLE4976_2K-DS-v01_02-en.pdf?folderId=5546d4694909da4801490a07012f053b&fileId=db3a30432c59a87e012c5e9c3dc5351c
TLE49762KHTSA1
Hersteller: Infineon Technologies
Description: MAGNETIC SWITCH UNIPOLAR SC59
auf Bestellung 495000 Stücke:
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AnzahlPrivatkunde
995+0.64 EUR
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TLE4976-2K Infineon-TLE4976_2K-DS-v01_02-en.pdf?fileId=db3a30432c59a87e012c5e9c3dc5351c
TLE4976-2K
Hersteller: Infineon Technologies
Description: TLE4976 - HALL SWITCH
auf Bestellung 252000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
995+0.64 EUR
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IPP60R385CP INFNS15867-1.pdf?t.download=true&u=5oefqw
IPP60R385CP
Hersteller: Infineon Technologies
Description: MOSFET N-CH 600V 9A TO220-3-1
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 385mOhm @ 5.2A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 340µA
Supplier Device Package: PG-TO220-3-1
Part Status: Active
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 790 pF @ 100 V
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AnzahlPrivatkunde
229+2.59 EUR
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SP001017058 Infineon-IPX60R380P6-DS-v02_03-EN.pdf?fileId=db3a3043416e106e01416e9316410203
Hersteller: Infineon Technologies
Description: IPP60R380P6 - 600V N-CHANNEL
Input Capacitance (Ciss) (Max) @ Vds: 877 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PG-TO220-3-1
Vgs(th) (Max) @ Id: 4.5V @ 320µA
Power Dissipation (Max): 83W (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 3.8A, 10V
Current - Continuous Drain (Id) @ 25°C: 10.6A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Bulk
auf Bestellung 1000 Stücke:
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AnzahlPrivatkunde
267+2.37 EUR
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BAS116E6433 SIEMD095-236.pdf?t.download=true&u=5oefqw
BAS116E6433
Hersteller: Infineon Technologies
Description: DIODE GEN PURP 80V 250MA SOT23-3
Supplier Device Package: SOT-23-3
Current - Average Rectified (Io): 250mA
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 1.5 µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Bulk
Current - Reverse Leakage @ Vr: 5 nA @ 75 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Voltage - DC Reverse (Vr) (Max): 80 V
Part Status: Active
Operating Temperature - Junction: 150°C (Max)
Produkt ist nicht verfügbar
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BAS116E6327 INFNS10816-1.pdf?t.download=true&u=5oefqw
BAS116E6327
Hersteller: Infineon Technologies
Description: RECTIFIER DIODE, 0.25A
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.5 µs
Technology: Standard
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Current - Average Rectified (Io): 250mA
Supplier Device Package: PG-SOT23
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 5 nA @ 75 V
Produkt ist nicht verfügbar
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AUIR3241SBOARDB2BTOBO1 Infineon-AUIR324_demoboard-UserManual-v02_00-EN.pdf?fileId=5546d46265f064ff016667e5d4133c3f
AUIR3241SBOARDB2BTOBO1
Hersteller: Infineon Technologies
Description: EVAL BOARD FOR AUIR3241S
Packaging: Box
Function: Power Distribution Switch (Load Switch)
Type: Power Management
Contents: Board(s)
Utilized IC / Part: AUIR3241S, AUIR3242S
Supplied Contents: Board(s)
Part Status: Active
auf Bestellung 1 Stücke:
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1+274.58 EUR
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BAW56WE6433 INFNS11183-1.pdf?t.download=true&u=5oefqw
BAW56WE6433
Hersteller: Infineon Technologies
Description: DIODE ARR GP 80V 200MA SOT323-3
Packaging: Bulk
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 200mA (DC)
Supplier Device Package: PG-SOT323-3
Operating Temperature - Junction: 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 150 nA @ 70 V
auf Bestellung 190000 Stücke:
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AnzahlPrivatkunde
8955+0.055 EUR
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DEMO2PCS01GTOBO1
Hersteller: Infineon Technologies
Description: EVAL BOARD FOR ICE2PCS01G
Packaging: Box
Function: Power Factor Correction
Type: Power Management
Contents: Board(s)
Utilized IC / Part: ICE2PCS01G
Supplied Contents: Board(s)
Part Status: Active
Produkt ist nicht verfügbar
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BGA915N7E6327XTMA1 INFNS16698-1.pdf?t.download=true&u=5oefqw
BGA915N7E6327XTMA1
Hersteller: Infineon Technologies
Description: IC AMP UMTS 800MHZ/900MHZ TSLP16
Packaging: Bulk
Package / Case: 16-XFQFN Exposed Pad
Mounting Type: Surface Mount
Frequency: 800MHz, 900MHz, 1.8GHz, 1.9GHz, 2.1GHz
RF Type: UMTS
Voltage - Supply: 2.7V ~ 3V
Gain: 16.1dB
Current - Supply: 3.4mA
Noise Figure: 1.1dB
P1dB: -6dBm
Supplier Device Package: TSLP-16-1
auf Bestellung 10158 Stücke:
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AnzahlPrivatkunde
472+1.14 EUR
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BGB717L7ESDE6327 INFNS27657-1.pdf?t.download=true&u=5oefqw
BGB717L7ESDE6327
Hersteller: Infineon Technologies
Description: IC AMP FM 76MHZ-108MHZ TSLP7-1
Packaging: Bulk
Package / Case: 6-XFDFN Exposed Pad
Mounting Type: Surface Mount
Frequency: 76MHz ~ 108MHz
RF Type: FM
Voltage - Supply: 1.8V ~ 4V
Gain: 12dB
Current - Supply: 3mA
Noise Figure: 1dB
P1dB: -5.5dBm
Test Frequency: 100MHz
Supplier Device Package: PG-TSLP-7-1
auf Bestellung 132804 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
670+0.89 EUR
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BGA715L7E6327 INFNS13467-1.pdf?t.download=true&u=5oefqw
Hersteller: Infineon Technologies
Description: IC AMP UMTS 1.9/2.1GHZ TSLP7-1
Packaging: Bulk
Package / Case: 6-XFDFN Exposed Pad
Mounting Type: Surface Mount
Frequency: 1.9GHz, 2.1GHz
RF Type: UMTS
Voltage - Supply: 2.6V ~ 3V
Gain: 17dB
Current - Supply: 3.6mA
Noise Figure: 1.1dB
P1dB: -8dBm
Test Frequency: 2.1GHz
Supplier Device Package: PG-TSLP-7-1
Part Status: Active
auf Bestellung 11336 Stücke:
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AnzahlPrivatkunde
726+0.86 EUR
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S29GL512T11DHIV20 Infineon-S29GL01GT_S29GL512T_1-Gb_(128_MB)_512-Mb_(64_MB)_GL-T_MirrorBit_Eclipse_Flash-DataSheet-v13_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed2abb34fce&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_in
S29GL512T11DHIV20
Hersteller: Infineon Technologies
Description: IC FLASH 512MBIT PARALLEL 64FBGA
Packaging: Tray
Package / Case: 64-LBGA
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.65V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 64-FBGA (9x9)
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 110 ns
Memory Organization: 64M x 8
DigiKey Programmable: Not Verified
auf Bestellung 2177 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2+15.79 EUR
10+14.67 EUR
25+14.22 EUR
40+13.98 EUR
80+13.65 EUR
260+13.41 EUR
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S29GL512T11TFV010 Infineon-S29GL01GT_S29GL512T_1-Gb_(128_MB)_512-Mb_(64_MB)_GL-T_MirrorBit_Eclipse_Flash-DataSheet-v13_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed2abb34fce&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_in
S29GL512T11TFV010
Hersteller: Infineon Technologies
Description: IC FLASH 512MBIT PARALLEL 56TSOP
Packaging: Tray
Package / Case: 56-TFSOP (0.724", 18.40mm Width)
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 56-TSOP
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 110 ns
Memory Organization: 64M x 8
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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S29GL512T12TFN010 Infineon-S29GL01GT_S29GL512T_1-Gb_(128_MB)_512-Mb_(64_MB)_GL-T_MirrorBit_Eclipse_Flash-DataSheet-v13_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed2abb34fce&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_in
S29GL512T12TFN010
Hersteller: Infineon Technologies
Description: IC FLASH 512MBIT PARALLEL 56TSOP
Packaging: Tray
Package / Case: 56-TFSOP (0.724", 18.40mm Width)
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 56-TSOP
Part Status: Active
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 120 ns
Memory Organization: 64M x 8
DigiKey Programmable: Not Verified
auf Bestellung 546 Stücke:
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AnzahlPrivatkunde
2+19.98 EUR
10+18.55 EUR
25+17.98 EUR
91+17.17 EUR
182+17.12 EUR
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SLE 4418 M2.2 SLE4418%2C%20SLE4428.pdf
Hersteller: Infineon Technologies
Description: IC EEPROM 1KBYTE M2.2 PKG
Packaging: Bulk
Package / Case: M2.2 Chip Card Module
Applications: Security
Supplier Device Package: M2.2 Chip Card Module
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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SPW16N50C3 Infineon-SPW16N50C3-DS-v02_05-en.pdf?fileId=db3a304412b407950112b42d2eca4824
SPW16N50C3
Hersteller: Infineon Technologies
Description: SPW16N50 - 500V COOLMOS N-CHANNE
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 66 nC @ 10 V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PG-TO247-3-21
Vgs(th) (Max) @ Id: 3.9V @ 675µA
Power Dissipation (Max): 160W (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Bulk
Drain to Source Voltage (Vdss): 500 V
Vgs (Max): ±20V
auf Bestellung 270 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
141+4.18 EUR
Mindestbestellmenge: 141 Stücke
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SPA16N50C3 INFNS14199-1.pdf?t.download=true&u=5oefqw
SPA16N50C3
Hersteller: Infineon Technologies
Description: SPA16N50 - 500V COOLMOS N-CHANNE
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 25 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PG-TO220-3-111
Vgs(th) (Max) @ Id: 3.9V @ 675µA
Power Dissipation (Max): 34W (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Bulk
Gate Charge (Qg) (Max) @ Vgs: 66 nC @ 10 V
Drain to Source Voltage (Vdss): 500 V
Produkt ist nicht verfügbar
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BGA420H6327 INFNS11594-1.pdf?t.download=true&u=5oefqw
BGA420H6327
Hersteller: Infineon Technologies
Description: IC RF AMP GPS SOT343-4
Packaging: Bulk
Package / Case: SC-82A, SOT-343
Mounting Type: Surface Mount
RF Type: General Purpose
Voltage - Supply: 3V ~ 6V
Gain: 13dB
Current - Supply: 6.7mA
Noise Figure: 2.3dB
P1dB: -2.5dBm
Test Frequency: 1GHz
Supplier Device Package: PG-SOT343-4-1
Part Status: Active
Produkt ist nicht verfügbar
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IKW25T120 description INFNS27302-1.pdf?t.download=true&u=5oefqw
IKW25T120
Hersteller: Infineon Technologies
Description: IKW25T120 - DISCRETE IGBT WITH A
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 200 ns
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 25A
Supplier Device Package: PG-TO247-3-21
IGBT Type: NPT, Trench Field Stop
Td (on/off) @ 25°C: 50ns/560ns
Switching Energy: 2mJ (on), 2.2mJ (off)
Test Condition: 600V, 25A, 22Ohm, 15V
Gate Charge: 155 nC
Part Status: Active
Current - Collector (Ic) (Max): 50 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 75 A
Power - Max: 190 W
Produkt ist nicht verfügbar
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1IRF3710PBF IRSDS11475-1.pdf?t.download=true&u=5oefqw
1IRF3710PBF
Hersteller: Infineon Technologies
Description: IRF3710 - 100V HEXFET N-CHANNEL
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 57A (Tc)
Rds On (Max) @ Id, Vgs: 23mOhm @ 28A, 10V
Power Dissipation (Max): 200W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3130 pF @ 25 V
Produkt ist nicht verfügbar
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RF3710PBF IRSDS11475-1.pdf?t.download=true&u=5oefqw
RF3710PBF
Hersteller: Infineon Technologies
Description: IRF3710 - N-CHANNEL POWER MOSFET
Packaging: Bulk
Part Status: Active
Produkt ist nicht verfügbar
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IPD80R280P7ATMA1 Infineon-IPD80R280P7-DS-v02_00-EN.pdf?fileId=5546d46255a50e820155da39b3dc5a9b
IPD80R280P7ATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 800V 17A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 7.2A, 10V
Power Dissipation (Max): 101W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 360µA
Supplier Device Package: PG-TO252-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 500 V
auf Bestellung 5906 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3+7.39 EUR
10+4.86 EUR
100+3.4 EUR
500+2.81 EUR
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IPD80R4K5P7ATMA1 Infineon-IPD80R4K5P7-DS-v02_00-EN.pdf?fileId=5546d46255a50e820155da0c589b5949
IPD80R4K5P7ATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 800V 1.5A TO252
Rds On (Max) @ Id, Vgs: 4.5Ohm @ 400mA, 10V
Current - Continuous Drain (Id) @ 25°C: 1.5A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 80 pF @ 500 V
Gate Charge (Qg) (Max) @ Vgs: 4 nC @ 10 V
Drain to Source Voltage (Vdss): 800 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: PG-TO252-3
Vgs(th) (Max) @ Id: 3.5V @ 200µA
Power Dissipation (Max): 13W (Tc)
Produkt ist nicht verfügbar
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IPD80R4K5P7ATMA1 Infineon-IPD80R4K5P7-DS-v02_00-EN.pdf?fileId=5546d46255a50e820155da0c589b5949
IPD80R4K5P7ATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 800V 1.5A TO252
Input Capacitance (Ciss) (Max) @ Vds: 80 pF @ 500 V
Gate Charge (Qg) (Max) @ Vgs: 4 nC @ 10 V
Drain to Source Voltage (Vdss): 800 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: PG-TO252-3
Vgs(th) (Max) @ Id: 3.5V @ 200µA
Power Dissipation (Max): 13W (Tc)
Rds On (Max) @ Id, Vgs: 4.5Ohm @ 400mA, 10V
Current - Continuous Drain (Id) @ 25°C: 1.5A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
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SPB07N60C3 Infineon-SPB07N60C3-DS-v02_05-en.pdf?fileId=db3a304412b407950112b42df065491f
SPB07N60C3
Hersteller: Infineon Technologies
Description: SPB07N60 - 600V COOLMOS N-CHANNE
Input Capacitance (Ciss) (Max) @ Vds: 790 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: PG-TO263-3-2
Vgs(th) (Max) @ Id: 3.9V @ 350µA
Power Dissipation (Max): 83W (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 4.6A, 10V
Current - Continuous Drain (Id) @ 25°C: 7.3A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Bulk
Produkt ist nicht verfügbar
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SPU07N60C3BKMA1 Infineon-SPD_U07N60C3-DS-v02_07-en.pdf?fileId=db3a30433f1b26e8013f1e7536e102d4
SPU07N60C3BKMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 650V 7.3A TO251-3
Packaging: Bulk
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.3A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 4.6A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 350µA
Supplier Device Package: PG-TO251-3-21
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 790 pF @ 25 V
auf Bestellung 458 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
224+2.46 EUR
Mindestbestellmenge: 224 Stücke
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CY7C057V-12BBC CY7C056V,057V.pdf
CY7C057V-12BBC
Hersteller: Infineon Technologies
Description: IC SRAM 1.152MBIT PAR 172FBGA
auf Bestellung 2169 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
4+160.96 EUR
Mindestbestellmenge: 4 Stücke
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BUZ30AH3045A INFNS15132-1.pdf?t.download=true&u=5oefqw
Hersteller: Infineon Technologies
Description: BUZ30 - 12V-300V N-CHANNEL POWER
Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 25 V
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: PG-TO263-3-2
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 125W (Tc)
Rds On (Max) @ Id, Vgs: 130mOhm @ 13.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Bulk
Produkt ist nicht verfügbar
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