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BSC0302LSATMA1 BSC0302LSATMA1 Infineon Technologies Infineon-BSC0302LS-DataSheet-v02_00-EN.pdf?fileId=5546d462700c0ae601708b866a8713cd Description: MOSFET N-CH 120V 12A/99A TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 99A (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 50A, 10V
Power Dissipation (Max): 156W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 112µA
Supplier Device Package: PG-TDSON-8-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 120 V
Gate Charge (Qg) (Max) @ Vgs: 79 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7400 pF @ 60 V
auf Bestellung 7100 Stücke:
Lieferzeit 10-14 Tag (e)
4+4.54 EUR
10+2.94 EUR
100+2.03 EUR
500+1.64 EUR
1000+1.51 EUR
2000+1.41 EUR
Mindestbestellmenge: 4
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IPD65R600C6BTMA1 IPD65R600C6BTMA1 Infineon Technologies Infineon-IPD65R600C6-DS-v02_01-en.pdf?folderId=5546d4694909da4801490a07012f053b&fileId=db3a30433f1b26e8013f2ceafdee37c4 Description: MOSFET N-CH 650V 7.3A TO252-3
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.3A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 2.1A, 10V
Power Dissipation (Max): 63W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 210µA
Supplier Device Package: PG-TO252-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 440 pF @ 100 V
auf Bestellung 12500 Stücke:
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330+1.38 EUR
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IPP70N04S3-07 IPP70N04S3-07 Infineon Technologies INFNS10667-1.pdf?t.download=true&u=5oefqw Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 70A, 10V
Power Dissipation (Max): 79W (Tc)
Vgs(th) (Max) @ Id: 4V @ 50µA
Supplier Device Package: PG-TO220-3-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2700 pF @ 25 V
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CY96F613RBPMC-GS-UJE2 CY96F613RBPMC-GS-UJE2 Infineon Technologies Infineon-CY96610_SERIES_F2MC-16FX_16_BIT_PROPRIETARY_MICROCONTROLLER-AdditionalTechnicalInformation-v07_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0edae3195d8d&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all Description: IC MCU 16BIT 96KB FLASH 48LQFP
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CY96F612RBPMC-GS-UJE1 CY96F612RBPMC-GS-UJE1 Infineon Technologies Infineon-CY96610_SERIES_F2MC-16FX_16_BIT_PROPRIETARY_MICROCONTROLLER-AdditionalTechnicalInformation-v07_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0edae3195d8d&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all Description: IC MCU 16BIT 64KB FLASH 48LQFP
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CY96F613ABPMC-GS-UJE1 CY96F613ABPMC-GS-UJE1 Infineon Technologies Infineon-CY96610_SERIES_F2MC-16FX_16_BIT_PROPRIETARY_MICROCONTROLLER-AdditionalTechnicalInformation-v07_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0edae3195d8d&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all Description: IC MCU 16BIT 96KB FLASH 48LQFP
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CY96F613RBPMC-GS-UJE1 CY96F613RBPMC-GS-UJE1 Infineon Technologies Infineon-CY96610_SERIES_F2MC-16FX_16_BIT_PROPRIETARY_MICROCONTROLLER-AdditionalTechnicalInformation-v07_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0edae3195d8d&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all Description: IC MCU 16BIT 96KB FLASH 48LQFP
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CY96F615RBPMC-GS-UJE1 CY96F615RBPMC-GS-UJE1 Infineon Technologies Infineon-CY96610_SERIES_F2MC-16FX_16_BIT_PROPRIETARY_MICROCONTROLLER-AdditionalTechnicalInformation-v07_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0edae3195d8d&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all Description: IC MCU 16BIT 160KB FLASH 48LQFP
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MB96F625RBPMC1-GS119JAE2 Infineon Technologies Description: IC AUTO MCU
Packaging: Tray
Part Status: Obsolete
DigiKey Programmable: Not Verified
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MB96F625RBPMC1-GS120JAE2 Infineon Technologies Description: IC AUTO MCU
Packaging: Tray
Part Status: Obsolete
DigiKey Programmable: Not Verified
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IPD65R600E6 IPD65R600E6 Infineon Technologies INFN-S-A0004583418-1.pdf?t.download=true&u=5oefqw Description: COOLMOS N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.3A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 2.1A, 10V
Power Dissipation (Max): 63W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 210µA
Supplier Device Package: PG-TO252-3-313
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 440 pF @ 100 V
Produkt ist nicht verfügbar
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IPD65R600E6TR IPD65R600E6TR Infineon Technologies Infineon-IPD65R600E6-DS-v02_02-EN.pdf?fileId=db3a30433efacd9a013f0a0c175b3080 Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.3A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 2.1A, 10V
Power Dissipation (Max): 63W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 210µA
Supplier Device Package: PG-TO252-3-313
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 440 pF @ 100 V
Produkt ist nicht verfügbar
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IPD65R600E6BTMA1 IPD65R600E6BTMA1 Infineon Technologies Infineon-IPD65R600E6-DS-v02_01-en.pdf?folderId=5546d4694909da4801490a07012f053b&fileId=db3a30433efacd9a013f0a0c175b3080 Description: MOSFET N-CH 650V 7.3A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.3A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 2.1A, 10V
Power Dissipation (Max): 63W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 210µA
Supplier Device Package: PG-TO252-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 440 pF @ 100 V
Produkt ist nicht verfügbar
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IPD65R600C6ATMA1 IPD65R600C6ATMA1 Infineon Technologies Infineon-IPD65R600C6-DS-v02_01-en.pdf?folderId=5546d4694909da4801490a07012f053b&fileId=db3a30433f1b26e8013f2ceafdee37c4 Description: LOW POWER_LEGACY
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.3A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 2.1A, 10V
Power Dissipation (Max): 63W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 210µA
Supplier Device Package: PG-TO252-3-313
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 440 pF @ 100 V
Produkt ist nicht verfügbar
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EVAL6EDL04I06PTTOBO1 EVAL6EDL04I06PTTOBO1 Infineon Technologies Infineon-Evaluationboard_6EDL04I06PT-ApplicationNotes-v02_00-EN.pdf?fileId=db3a304340155f3d014029b1924102ff Description: EVAL BOARD FOR 6EDL04I06P
Packaging: Bulk
Function: Gate Driver
Type: Power Management
Utilized IC / Part: 6EDL04I06P
Supplied Contents: Board(s)
Part Status: Active
Contents: Board(s)
auf Bestellung 3 Stücke:
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1+253.19 EUR
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BC817K40WE6327 BC817K40WE6327 Infineon Technologies INFNS16504-1.pdf?t.download=true&u=5oefqw Description: BIPOLAR GEN PURPOSE TRANSISTOR
Packaging: Bulk
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 100mA, 1V
Frequency - Transition: 170MHz
Supplier Device Package: PG-SOT323-3-1
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 500 mW
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BC817K-40WE6327 BC817K-40WE6327 Infineon Technologies INFNS16504-1.pdf?t.download=true&u=5oefqw Description: BIPOLAR GEN PURPOSE TRANSISTOR
Packaging: Bulk
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 100mA, 1V
Frequency - Transition: 170MHz
Supplier Device Package: PG-SOT323-3-1
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 500 mW
Produkt ist nicht verfügbar
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IPB052N04NG IPB052N04NG Infineon Technologies INFNS16285-1.pdf?t.download=true&u=5oefqw Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Rds On (Max) @ Id, Vgs: 5.2mOhm @ 70A, 10V
Power Dissipation (Max): 79W (Tc)
Vgs(th) (Max) @ Id: 4V @ 33µA
Supplier Device Package: PG-TO-263-3-2
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3300 pF @ 20 V
auf Bestellung 1989 Stücke:
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693+0.7 EUR
Mindestbestellmenge: 693
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BSZ028N04LSATMA1 BSZ028N04LSATMA1 Infineon Technologies Infineon-BSZ028N04LS-DS-v02_01-EN.pdf?fileId=db3a304342371bb001424bb10c8b6fff Description: MOSFET N-CH 40V 21A/40A TSDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs: 2.8mOhm @ 20A, 10V
Power Dissipation (Max): 2.1W (Ta), 63W (Tc)
Supplier Device Package: PG-TSDSON-8-FL
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2300 pF @ 20 V
auf Bestellung 10000 Stücke:
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5000+0.55 EUR
10000+0.53 EUR
Mindestbestellmenge: 5000
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TLD5085EJ TLD5085EJ Infineon Technologies 38725609546442328tld5085ej_ds_v11_december2009.pdffolderiddb3a3043163797a6011667aa.pdf?t.download=true&u=5oefqw Description: SWITCHING REGULATOR, VOLT-MODE
Packaging: Bulk
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Voltage - Output: 0.6V ~ 16V
Mounting Type: Surface Mount
Number of Outputs: 1
Frequency: 370kHz
Type: DC DC Regulator
Operating Temperature: -40°C ~ 150°C (TJ)
Applications: Automotive, Backlight
Current - Output / Channel: 1.8A
Internal Switch(s): Yes
Topology: Step-Down (Buck)
Supplier Device Package: PG-DSO-8-27
Dimming: PWM
Voltage - Supply (Min): 4.75V
Voltage - Supply (Max): 45V
Part Status: Active
auf Bestellung 14226 Stücke:
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136+3.56 EUR
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IKB20N60H3ATMA1 IKB20N60H3ATMA1 Infineon Technologies IKB20N60H3_Rev1_1G.pdf?folderId=db3a3043156fd5730115f56849b61941&fileId=db3a30432a40a650012a476e38862bd0 Description: IGBT TRENCH FS 600V 40A TO263-3
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 112 ns
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 20A
Supplier Device Package: PG-TO263-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 16ns/194ns
Switching Energy: 690µJ
Test Condition: 400V, 20A, 14.6Ohm, 15V
Gate Charge: 120 nC
Part Status: Active
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 80 A
Power - Max: 170 W
auf Bestellung 2000 Stücke:
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1000+1.2 EUR
2000+1.11 EUR
Mindestbestellmenge: 1000
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IKB20N60H3ATMA1 IKB20N60H3ATMA1 Infineon Technologies IKB20N60H3_Rev1_1G.pdf?folderId=db3a3043156fd5730115f56849b61941&fileId=db3a30432a40a650012a476e38862bd0 Description: IGBT TRENCH FS 600V 40A TO263-3
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 112 ns
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 20A
Supplier Device Package: PG-TO263-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 16ns/194ns
Switching Energy: 690µJ
Test Condition: 400V, 20A, 14.6Ohm, 15V
Gate Charge: 120 nC
Part Status: Active
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 80 A
Power - Max: 170 W
auf Bestellung 2261 Stücke:
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5+3.68 EUR
10+2.37 EUR
100+1.62 EUR
500+1.3 EUR
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IPI072N10N3 G Infineon Technologies INFNS16324-1.pdf?t.download=true&u=5oefqw Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 7.2mOhm @ 80A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 90µA
Supplier Device Package: PG-TO262-3-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4910 pF @ 50 V
auf Bestellung 1000 Stücke:
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202+2.62 EUR
Mindestbestellmenge: 202
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IPI072N10N3GXK IPI072N10N3GXK Infineon Technologies Description: MOSFET N-CH 100V 80A TO262-3
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 7.2mOhm @ 80A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 90µA
Supplier Device Package: PG-TO262-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4910 pF @ 50 V
Produkt ist nicht verfügbar
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IHY30N160R2XK Infineon Technologies Description: IGBT, N-CHANNEL
Packaging: Bulk
auf Bestellung 248 Stücke:
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115+4.22 EUR
Mindestbestellmenge: 115
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IRL520NSTRLPBF IRL520NSTRLPBF Infineon Technologies irl520nspbf.pdf?fileId=5546d462533600a40153565fa45e255d Description: MOSFET N-CH 100V 10A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 180mOhm @ 6A, 10V
Power Dissipation (Max): 3.8W (Ta), 48W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: D2PAK
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 440 pF @ 25 V
Produkt ist nicht verfügbar
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IFS75S12N3T4_B11 Infineon Technologies Description: TRANSISTOR IGBT MODULE
Packaging: Bulk
auf Bestellung 200 Stücke:
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3+172.24 EUR
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SKA06N06 Infineon Technologies Description: IGBT WITH ANTI-PARALLEL DIODE
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SLB9670VQ20FW785XUMA1 SLB9670VQ20FW785XUMA1 Infineon Technologies Infineon-SLB%209670VQ2.0-DataSheet-v01_00-EN.pdf?fileId=5546d4626fc1ce0b016fc78270350cd6&redirId=121746 Description: TPM
Packaging: Tape & Reel (TR)
Package / Case: 32-VFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: SPI
Operating Temperature: -20°C ~ 85°C (TA)
Voltage - Supply: 1.65V ~ 1.98V, 3V ~ 3.6V
Program Memory Type: NVM (6.8kB)
Applications: Trusted Platform Module (TPM)
Core Processor: 16-Bit
Supplier Device Package: PG-VQFN-32-13
Part Status: Obsolete
Number of I/O: 1
DigiKey Programmable: Not Verified
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SLB9670VQ20FW760XUMA1 SLB9670VQ20FW760XUMA1 Infineon Technologies Infineon-SLB%209670VQ2.0-DataSheet-v01_00-EN.pdf?fileId=5546d4626fc1ce0b016fc78270350cd6&redirId=121746 Description: SECURITY IC'S/AUTHENTICATION IC'
Packaging: Tape & Reel (TR)
Package / Case: 32-VFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: SPI
Operating Temperature: -20°C ~ 85°C (TA)
Voltage - Supply: 1.65V ~ 3.6V
Program Memory Type: NVM (6.8kB)
Applications: Trusted Platform Module (TPM)
Core Processor: 16-Bit
Supplier Device Package: PG-VQFN-32-13
Part Status: Active
Number of I/O: 1
DigiKey Programmable: Not Verified
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SLB9670XQ20FW760XUMA1 SLB9670XQ20FW760XUMA1 Infineon Technologies Infineon-SLB%209670VQ2.0-DataSheet-v01_00-EN.pdf?fileId=5546d4626fc1ce0b016fc78270350cd6&redirId=121746 Description: SECURITY IC'S/AUTHENTICATION IC'
Packaging: Tape & Reel (TR)
Package / Case: 32-VFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: SPI
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.65V ~ 3.6V
Program Memory Type: NVM (6.8kB)
Applications: Trusted Platform Module (TPM)
Core Processor: 16-Bit
Supplier Device Package: PG-VQFN-32-13
Part Status: Obsolete
Number of I/O: 1
DigiKey Programmable: Not Verified
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IFX24401EL V50 Infineon Technologies INFNS14039-1.pdf?t.download=true&u=5oefqw Description: IC REG LINEAR VOLTAGE REG
Packaging: Bulk
Package / Case: 14-LSSOP (0.154", 3.90mm Width) Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 30 µA
Voltage - Input (Max): 42V
Number of Regulators: 1
Supplier Device Package: PG-SSOP-14-1
Voltage - Output (Min/Fixed): 5V
Control Features: Enable
Part Status: Active
PSRR: 60dB (100Hz)
Voltage Dropout (Max): 0.5V @ 200mA
Protection Features: Over Current, Over Temperature, Short Circuit
Current - Supply (Max): 40 µA
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IFX24401ELV50 IFX24401ELV50 Infineon Technologies INFNS14039-1.pdf?t.download=true&u=5oefqw Description: IC REG LINEAR VOLTAGE REG
Packaging: Bulk
Package / Case: 14-LSSOP (0.154", 3.90mm Width) Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 30 µA
Voltage - Input (Max): 42V
Number of Regulators: 1
Supplier Device Package: PG-SSOP-14-1
Voltage - Output (Min/Fixed): 5V
Control Features: Enable
Part Status: Active
PSRR: 60dB (100Hz)
Voltage Dropout (Max): 0.5V @ 200mA
Protection Features: Over Current, Over Temperature, Short Circuit
Current - Supply (Max): 40 µA
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IPD90P04P4L04ATMA2 IPD90P04P4L04ATMA2 Infineon Technologies Infineon-IPD90P04P4L-04-DataSheet-v01_02-EN.pdf?fileId=db3a30432f69f146012f7829059b2dee Description: MOSFET P-CH 40V 90A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 4.3mOhm @ 90A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: PG-TO252-3-313
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +5V, -16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 176 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11570 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
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F3L11MR12W2M1B65BOMA1 F3L11MR12W2M1B65BOMA1 Infineon Technologies Infineon-F3L11MR12W2M1_B65-DataSheet-v02_01-EN.pdf?fileId=5546d46269e1c019016a92d4066064a2 Description: LOW POWER EASY
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Level Inverter
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 100A
NTC Thermistor: Yes
Supplier Device Package: AG-EASY2BM-2
IGBT Type: Trench
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 40 µA
Input Capacitance (Cies) @ Vce: 7.36 nF @ 800 V
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IKW75N65ET7XKSA1 IKW75N65ET7XKSA1 Infineon Technologies Infineon-IKW75N65ET7-DataSheet-v02_01-EN.pdf?fileId=5546d46272e49d2a017351bee5af57fb Description: IGBT TRENCH FS 650V 80A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 100 ns
Vce(on) (Max) @ Vge, Ic: 1.65V @ 15V, 75A
Supplier Device Package: PG-TO247-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 28ns/310ns
Switching Energy: 2.17mJ (on), 1.23mJ (off)
Test Condition: 400V, 75A, 4.7Ohm, 15V
Gate Charge: 435 nC
Part Status: Active
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 225 A
Power - Max: 333 W
Grade: Automotive
Qualification: AEC-Q101
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BSZ0602LSATMA1 BSZ0602LSATMA1 Infineon Technologies Infineon-BSZ0602LS-DataSheet-v02_02-EN.pdf?fileId=5546d462700c0ae601708b98b9631427 Description: MOSFET N-CH 80V 13A/40A TSDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 20A, 10V
Power Dissipation (Max): 69W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 36µA
Supplier Device Package: PG-TDSON-8 FL
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2340 pF @ 40 V
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BSZ0602LSATMA1 BSZ0602LSATMA1 Infineon Technologies Infineon-BSZ0602LS-DataSheet-v02_02-EN.pdf?fileId=5546d462700c0ae601708b98b9631427 Description: MOSFET N-CH 80V 13A/40A TSDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 20A, 10V
Power Dissipation (Max): 69W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 36µA
Supplier Device Package: PG-TDSON-8 FL
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2340 pF @ 40 V
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IPU60R2K1CEBKMA1 IPU60R2K1CEBKMA1 Infineon Technologies Infineon-IPU60R2K1CE-DS-v02_02-EN.pdf?fileId=5546d46249be182c0149c7e409461eac Description: MOSFET N-CH 600V 2.3A TO251-3
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.3A (Tc)
Rds On (Max) @ Id, Vgs: 2.1Ohm @ 760mA, 10V
Power Dissipation (Max): 22W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 60µA
Supplier Device Package: PG-TO251-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 6.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 140 pF @ 100 V
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IPLK60R1K0PFD7ATMA1 IPLK60R1K0PFD7ATMA1 Infineon Technologies Infineon-IPLK60R1K0PFD7-DataSheet-v02_00-EN.pdf?fileId=5546d4626fc1ce0b016fd791157e3d92 Description: MOSFET N-CH 600V 5.2A THIN-PAK
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.2A (Tc)
Rds On (Max) @ Id, Vgs: 1Ohm @ 1A, 10V
Power Dissipation (Max): 31.3W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 50µA
Supplier Device Package: PG-TDSON-8-52
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 230 pF @ 400 V
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IPLK60R1K0PFD7ATMA1 IPLK60R1K0PFD7ATMA1 Infineon Technologies Infineon-IPLK60R1K0PFD7-DataSheet-v02_00-EN.pdf?fileId=5546d4626fc1ce0b016fd791157e3d92 Description: MOSFET N-CH 600V 5.2A THIN-PAK
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.2A (Tc)
Rds On (Max) @ Id, Vgs: 1Ohm @ 1A, 10V
Power Dissipation (Max): 31.3W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 50µA
Supplier Device Package: PG-TDSON-8-52
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 230 pF @ 400 V
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CY7C1442KV33-250AXC CY7C1442KV33-250AXC Infineon Technologies Infineon-CY7C1440KV33_CY7C1442KV33_CY7C1440KVE33_36-Mbit_(1_M_36_2_M_18)_Pipelined_Sync_SRAM_(With_ECC)-DataSheet-v08_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ecee95a4967&utm_source=cypress&utm_medium=referral&utm_campaign=20211 Description: IC SRAM 36MBIT PAR 100TQFP
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Memory Size: 36Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 3.135V ~ 3.6V
Technology: SRAM - Synchronous, SDR
Clock Frequency: 250 MHz
Memory Format: SRAM
Supplier Device Package: 100-TQFP (14x20)
Memory Interface: Parallel
Access Time: 2.6 ns
Memory Organization: 2M x 18
DigiKey Programmable: Not Verified
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TLE8457CLEXUMA1 TLE8457CLEXUMA1 Infineon Technologies Infineon-TLE8457CD-DS-v01_10-EN.pdf?fileId=5546d462689a790c0168a1d53be462be Description: IC TRANSCEIVER 1/1 PGTSON81
Packaging: Tape & Reel (TR)
Package / Case: 8-TDFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Type: Transceiver
Number of Drivers/Receivers: 1/1
Data Rate: 20kbps
Protocol: LIN
Supplier Device Package: PG-TSON-8-1
Part Status: Active
Grade: Automotive
Qualification: AEC-Q100
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TLE824533SAAUMA1 TLE824533SAAUMA1 Infineon Technologies Infineon-TLE82453-3SA-DS-v01_00-EN.pdf?fileId=5546d4624cb7f111014d289949d61dff Description: IC PWR DRIVER N-CHAN 1:3 DSO-36
Packaging: Cut Tape (CT)
Features: Status Flag
Package / Case: 36-BSSOP (0.433", 11.00mm Width) Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 3
Interface: SPI
Switch Type: Relay, Solenoid Driver
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side or Low Side
Rds On (Typ): 250mOhm (Max)
Voltage - Load: 8V ~ 17V
Voltage - Supply (Vcc/Vdd): 4.75V ~ 5.25V
Current - Output (Max): 1.5A
Ratio - Input:Output: 1:3
Supplier Device Package: PG-DSO-36-54
Fault Protection: Current Limiting (Fixed), Over Temperature
Part Status: Not For New Designs
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IPP80CN10NGXKSA1 IPP80CN10NGXKSA1 Infineon Technologies INFNS30238-1.pdf?t.download=true&u=5oefqw Description: PFET, 13A I(D), 100V, 0.08OHM, 1
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
Rds On (Max) @ Id, Vgs: 80mOhm @ 13A, 10V
Power Dissipation (Max): 31W (Tc)
Vgs(th) (Max) @ Id: 4V @ 12µA
Supplier Device Package: PG-TO220-3-123
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 716 pF @ 50 V
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IPP80P04P4L08AKSA1 IPP80P04P4L08AKSA1 Infineon Technologies IPx80P04P4L-08_rev1.2_7-3-19.pdf Description: OPTIMOS POWER-TRANSISTOR
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IM240S6Y1BAKSA1 Infineon Technologies IM240-S6xxB.pdf Description: MODULE IPM 3PHASE 23DIP
Packaging: Tube
Package / Case: 23-DIP Module (0.573", 14.55mm)
Mounting Type: Through Hole
Type: IGBT
Configuration: 3 Phase Inverter
Voltage - Isolation: 1900Vrms
Current: 3 A
Voltage: 600 V
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IM240S6Y2BAKSA1 Infineon Technologies IM240-S6xxB.pdf Description: MODULE IPM 3PHASE DIP23A
Packaging: Tube
Package / Case: 23-DIP Module (0.573", 14.55mm)
Mounting Type: Through Hole
Type: IGBT
Configuration: 3 Phase Inverter
Voltage - Isolation: 1900Vrms
Current: 3 A
Voltage: 600 V
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IRFR540ZTRPBF IRFR540ZTRPBF Infineon Technologies irfr540zpbf.pdf?fileId=5546d462533600a4015356325b2c2102 Description: MOSFET N-CH 100V 35A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 28.5mOhm @ 21A, 10V
Power Dissipation (Max): 91W (Tc)
Vgs(th) (Max) @ Id: 4V @ 50µA
Supplier Device Package: TO-252AA (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 59 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1690 pF @ 25 V
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SAK-XC2288H200F100LABKXUMA1 Infineon Technologies INFNS28076-1.pdf?t.download=true&u=5oefqw Description: 16 BIT C166 MICROXC2200 FAMILY (
Packaging: Bulk
Package / Case: 144-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 100MHz
Program Memory Size: 1.6MB (1.6M x 8)
RAM Size: 138K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: C166SV2
Data Converters: A/D 24x10b
Core Size: 16/32-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Connectivity: CANbus, EBI/EMI, I²C, LINbus, SPI, SSC, UART/USART, USI
Peripherals: DMA, I²S, POR, PWM, WDT
Supplier Device Package: PG-LQFP-144-13
Part Status: Active
Number of I/O: 118
DigiKey Programmable: Not Verified
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SAK-XC2797X-200F100LABKXUMA1 Infineon Technologies Description: IC MCU 16/32B 1.6MB FLSH 176LQFP
Packaging: Bulk
Package / Case: 176-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 100MHz
Program Memory Size: 1.6MB (1.6M x 8)
RAM Size: 138K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: C166SV2
Data Converters: A/D 30x10b
Core Size: 16/32-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Connectivity: CANbus, EBI/EMI, I²C, LINbus, SPI, SSC, UART/USART, USI
Peripherals: I²S, POR, PWM, WDT
Supplier Device Package: PG-LQFP-176-12
Number of I/O: 150
DigiKey Programmable: Not Verified
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TLE42712 TLE42712 Infineon Technologies Infineon-TLE4271-2-DS-v02_70-EN.pdf?fileId=5546d46259d9a4bf0159f97a56393e6f Description: IC REG LINEAR FIXED LDO REG
Packaging: Bulk
Package / Case: TO-220-7 Formed Leads
Output Type: Fixed
Mounting Type: Through Hole
Current - Output: 550mA
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Voltage - Input (Max): 40V
Number of Regulators: 1
Supplier Device Package: P-TO220-7-11
Voltage - Output (Min/Fixed): 5V
Control Features: Delay, Inhibit, Reset, Watchdog
Part Status: Active
PSRR: 54dB (100Hz)
Voltage Dropout (Max): 0.7V @ 550mA
Protection Features: Antisaturation, Over Temperature, Over Voltage, Reverse Polarity, Short Circuit
Current - Supply (Max): 90 mA
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TLE4271-2S TLE4271-2S Infineon Technologies Infineon-TLE4271-2-DS-v02_70-EN.pdf?fileId=5546d46259d9a4bf0159f97a56393e6f Description: IC REG LINEAR FIXED LDO REG
Packaging: Bulk
Package / Case: TO-220-7
Output Type: Fixed
Mounting Type: Through Hole
Current - Output: 550mA
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Voltage - Input (Max): 40V
Number of Regulators: 1
Supplier Device Package: PG-TO220-7-12
Voltage - Output (Min/Fixed): 5V
Control Features: Delay, Inhibit, Reset, Watchdog
Part Status: Active
PSRR: 54dB (100Hz)
Voltage Dropout (Max): 0.7V @ 550mA
Protection Features: Antisaturation, Over Temperature, Over Voltage, Reverse Polarity, Short Circuit
Current - Supply (Max): 90 mA
Produkt ist nicht verfügbar
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TLE42712S TLE42712S Infineon Technologies Infineon-TLE4271-2-DS-v02_70-EN.pdf?fileId=5546d46259d9a4bf0159f97a56393e6f Description: IC REG LINEAR FIXED LDO REG
Packaging: Bulk
Package / Case: TO-220-7
Output Type: Fixed
Mounting Type: Through Hole
Current - Output: 550mA
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Voltage - Input (Max): 40V
Number of Regulators: 1
Supplier Device Package: PG-TO220-7-12
Voltage - Output (Min/Fixed): 5V
Control Features: Delay, Inhibit, Reset, Watchdog
Part Status: Active
PSRR: 54dB (100Hz)
Voltage Dropout (Max): 0.7V @ 550mA
Protection Features: Antisaturation, Over Temperature, Over Voltage, Reverse Polarity, Short Circuit
Current - Supply (Max): 90 mA
Produkt ist nicht verfügbar
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TLE4271-2 TLE4271-2 Infineon Technologies Infineon-TLE4271-2-DS-v02_70-EN.pdf?fileId=5546d46259d9a4bf0159f97a56393e6f Description: FIXED POSITIVE LDO REGULATOR
Packaging: Bulk
Package / Case: TO-220-7 Formed Leads
Output Type: Fixed
Mounting Type: Through Hole
Current - Output: 550mA
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Voltage - Input (Max): 40V
Number of Regulators: 1
Supplier Device Package: P-TO220-7-11
Voltage - Output (Min/Fixed): 5V
Control Features: Delay, Inhibit, Reset, Watchdog
Part Status: Active
PSRR: 54dB (100Hz)
Voltage Dropout (Max): 0.7V @ 550mA
Protection Features: Antisaturation, Over Temperature, Over Voltage, Reverse Polarity, Short Circuit
Current - Supply (Max): 90 mA
Produkt ist nicht verfügbar
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SAB-C161SL25MAABXUMA1 SAB-C161SL25MAABXUMA1 Infineon Technologies INFNS05712-1.pdf?t.download=true&u=5oefqw Description: LEGACY 16 BIT MICROCONTROLLER
Packaging: Bulk
Package / Case: 80-QFP
Mounting Type: Surface Mount
Speed: 25MHz
RAM Size: 2K x 8
Operating Temperature: 0°C ~ 70°C (TA)
Oscillator Type: External, Internal
Program Memory Type: ROMless
Core Processor: C166
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 4.5V ~ 5.5V
Connectivity: EBI/EMI, SPI, UART/USART
Peripherals: POR, PWM, WDT
Supplier Device Package: PG-MQFP-80-7
Part Status: Active
Number of I/O: 63
DigiKey Programmable: Not Verified
auf Bestellung 3707 Stücke:
Lieferzeit 10-14 Tag (e)
70+7.24 EUR
Mindestbestellmenge: 70
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SAB-C161S-L25MAA SAB-C161S-L25MAA Infineon Technologies INFNS05712-1.pdf?t.download=true&u=5oefqw Description: LEGACY 16-BIT MCU
auf Bestellung 217 Stücke:
Lieferzeit 10-14 Tag (e)
75+6.63 EUR
Mindestbestellmenge: 75
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SAB-C-161S-L25M SAB-C-161S-L25M Infineon Technologies INFNS25991-1.pdf?t.download=true&u=5oefqw Description: LEGACY 16-BIT MCU
Packaging: Bulk
Package / Case: 80-QFP
Mounting Type: Surface Mount
Speed: 25MHz
RAM Size: 2K x 8
Operating Temperature: 0°C ~ 70°C (TA)
Oscillator Type: External, Internal
Program Memory Type: ROMless
Core Processor: C166
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 4.5V ~ 5.5V
Connectivity: EBI/EMI, SPI, UART/USART
Peripherals: POR, PWM, WDT
Supplier Device Package: PG-MQFP-80-7
Part Status: Active
Number of I/O: 63
DigiKey Programmable: Not Verified
auf Bestellung 850 Stücke:
Lieferzeit 10-14 Tag (e)
70+7.24 EUR
Mindestbestellmenge: 70
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SAB-C161RI-L16F Infineon Technologies Description: LEGACY 16-BIT MCU
Packaging: Bulk
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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SAB-C161RI-L16M Infineon Technologies Description: LEGACY 16-BIT MCU
Packaging: Bulk
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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BSC0302LSATMA1 Infineon-BSC0302LS-DataSheet-v02_00-EN.pdf?fileId=5546d462700c0ae601708b866a8713cd
BSC0302LSATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 120V 12A/99A TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 99A (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 50A, 10V
Power Dissipation (Max): 156W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 112µA
Supplier Device Package: PG-TDSON-8-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 120 V
Gate Charge (Qg) (Max) @ Vgs: 79 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7400 pF @ 60 V
auf Bestellung 7100 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+4.54 EUR
10+2.94 EUR
100+2.03 EUR
500+1.64 EUR
1000+1.51 EUR
2000+1.41 EUR
Mindestbestellmenge: 4
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IPD65R600C6BTMA1 Infineon-IPD65R600C6-DS-v02_01-en.pdf?folderId=5546d4694909da4801490a07012f053b&fileId=db3a30433f1b26e8013f2ceafdee37c4
IPD65R600C6BTMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 650V 7.3A TO252-3
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.3A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 2.1A, 10V
Power Dissipation (Max): 63W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 210µA
Supplier Device Package: PG-TO252-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 440 pF @ 100 V
auf Bestellung 12500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
330+1.38 EUR
Mindestbestellmenge: 330
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IPP70N04S3-07 INFNS10667-1.pdf?t.download=true&u=5oefqw
IPP70N04S3-07
Hersteller: Infineon Technologies
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 70A, 10V
Power Dissipation (Max): 79W (Tc)
Vgs(th) (Max) @ Id: 4V @ 50µA
Supplier Device Package: PG-TO220-3-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2700 pF @ 25 V
Produkt ist nicht verfügbar
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CY96F613RBPMC-GS-UJE2 Infineon-CY96610_SERIES_F2MC-16FX_16_BIT_PROPRIETARY_MICROCONTROLLER-AdditionalTechnicalInformation-v07_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0edae3195d8d&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all
CY96F613RBPMC-GS-UJE2
Hersteller: Infineon Technologies
Description: IC MCU 16BIT 96KB FLASH 48LQFP
Produkt ist nicht verfügbar
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CY96F612RBPMC-GS-UJE1 Infineon-CY96610_SERIES_F2MC-16FX_16_BIT_PROPRIETARY_MICROCONTROLLER-AdditionalTechnicalInformation-v07_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0edae3195d8d&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all
CY96F612RBPMC-GS-UJE1
Hersteller: Infineon Technologies
Description: IC MCU 16BIT 64KB FLASH 48LQFP
Produkt ist nicht verfügbar
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CY96F613ABPMC-GS-UJE1 Infineon-CY96610_SERIES_F2MC-16FX_16_BIT_PROPRIETARY_MICROCONTROLLER-AdditionalTechnicalInformation-v07_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0edae3195d8d&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all
CY96F613ABPMC-GS-UJE1
Hersteller: Infineon Technologies
Description: IC MCU 16BIT 96KB FLASH 48LQFP
Produkt ist nicht verfügbar
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CY96F613RBPMC-GS-UJE1 Infineon-CY96610_SERIES_F2MC-16FX_16_BIT_PROPRIETARY_MICROCONTROLLER-AdditionalTechnicalInformation-v07_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0edae3195d8d&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all
CY96F613RBPMC-GS-UJE1
Hersteller: Infineon Technologies
Description: IC MCU 16BIT 96KB FLASH 48LQFP
Produkt ist nicht verfügbar
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CY96F615RBPMC-GS-UJE1 Infineon-CY96610_SERIES_F2MC-16FX_16_BIT_PROPRIETARY_MICROCONTROLLER-AdditionalTechnicalInformation-v07_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0edae3195d8d&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all
CY96F615RBPMC-GS-UJE1
Hersteller: Infineon Technologies
Description: IC MCU 16BIT 160KB FLASH 48LQFP
Produkt ist nicht verfügbar
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MB96F625RBPMC1-GS119JAE2
Hersteller: Infineon Technologies
Description: IC AUTO MCU
Packaging: Tray
Part Status: Obsolete
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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MB96F625RBPMC1-GS120JAE2
Hersteller: Infineon Technologies
Description: IC AUTO MCU
Packaging: Tray
Part Status: Obsolete
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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IPD65R600E6 INFN-S-A0004583418-1.pdf?t.download=true&u=5oefqw
IPD65R600E6
Hersteller: Infineon Technologies
Description: COOLMOS N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.3A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 2.1A, 10V
Power Dissipation (Max): 63W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 210µA
Supplier Device Package: PG-TO252-3-313
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 440 pF @ 100 V
Produkt ist nicht verfügbar
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IPD65R600E6TR Infineon-IPD65R600E6-DS-v02_02-EN.pdf?fileId=db3a30433efacd9a013f0a0c175b3080
IPD65R600E6TR
Hersteller: Infineon Technologies
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.3A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 2.1A, 10V
Power Dissipation (Max): 63W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 210µA
Supplier Device Package: PG-TO252-3-313
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 440 pF @ 100 V
Produkt ist nicht verfügbar
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IPD65R600E6BTMA1 Infineon-IPD65R600E6-DS-v02_01-en.pdf?folderId=5546d4694909da4801490a07012f053b&fileId=db3a30433efacd9a013f0a0c175b3080
IPD65R600E6BTMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 650V 7.3A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.3A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 2.1A, 10V
Power Dissipation (Max): 63W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 210µA
Supplier Device Package: PG-TO252-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 440 pF @ 100 V
Produkt ist nicht verfügbar
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IPD65R600C6ATMA1 Infineon-IPD65R600C6-DS-v02_01-en.pdf?folderId=5546d4694909da4801490a07012f053b&fileId=db3a30433f1b26e8013f2ceafdee37c4
IPD65R600C6ATMA1
Hersteller: Infineon Technologies
Description: LOW POWER_LEGACY
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.3A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 2.1A, 10V
Power Dissipation (Max): 63W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 210µA
Supplier Device Package: PG-TO252-3-313
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 440 pF @ 100 V
Produkt ist nicht verfügbar
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EVAL6EDL04I06PTTOBO1 Infineon-Evaluationboard_6EDL04I06PT-ApplicationNotes-v02_00-EN.pdf?fileId=db3a304340155f3d014029b1924102ff
EVAL6EDL04I06PTTOBO1
Hersteller: Infineon Technologies
Description: EVAL BOARD FOR 6EDL04I06P
Packaging: Bulk
Function: Gate Driver
Type: Power Management
Utilized IC / Part: 6EDL04I06P
Supplied Contents: Board(s)
Part Status: Active
Contents: Board(s)
auf Bestellung 3 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+253.19 EUR
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BC817K40WE6327 INFNS16504-1.pdf?t.download=true&u=5oefqw
BC817K40WE6327
Hersteller: Infineon Technologies
Description: BIPOLAR GEN PURPOSE TRANSISTOR
Packaging: Bulk
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 100mA, 1V
Frequency - Transition: 170MHz
Supplier Device Package: PG-SOT323-3-1
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 500 mW
Produkt ist nicht verfügbar
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BC817K-40WE6327 INFNS16504-1.pdf?t.download=true&u=5oefqw
BC817K-40WE6327
Hersteller: Infineon Technologies
Description: BIPOLAR GEN PURPOSE TRANSISTOR
Packaging: Bulk
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 100mA, 1V
Frequency - Transition: 170MHz
Supplier Device Package: PG-SOT323-3-1
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 500 mW
Produkt ist nicht verfügbar
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IPB052N04NG INFNS16285-1.pdf?t.download=true&u=5oefqw
IPB052N04NG
Hersteller: Infineon Technologies
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Rds On (Max) @ Id, Vgs: 5.2mOhm @ 70A, 10V
Power Dissipation (Max): 79W (Tc)
Vgs(th) (Max) @ Id: 4V @ 33µA
Supplier Device Package: PG-TO-263-3-2
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3300 pF @ 20 V
auf Bestellung 1989 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
693+0.7 EUR
Mindestbestellmenge: 693
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BSZ028N04LSATMA1 Infineon-BSZ028N04LS-DS-v02_01-EN.pdf?fileId=db3a304342371bb001424bb10c8b6fff
BSZ028N04LSATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 40V 21A/40A TSDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs: 2.8mOhm @ 20A, 10V
Power Dissipation (Max): 2.1W (Ta), 63W (Tc)
Supplier Device Package: PG-TSDSON-8-FL
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2300 pF @ 20 V
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5000+0.55 EUR
10000+0.53 EUR
Mindestbestellmenge: 5000
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TLD5085EJ 38725609546442328tld5085ej_ds_v11_december2009.pdffolderiddb3a3043163797a6011667aa.pdf?t.download=true&u=5oefqw
TLD5085EJ
Hersteller: Infineon Technologies
Description: SWITCHING REGULATOR, VOLT-MODE
Packaging: Bulk
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Voltage - Output: 0.6V ~ 16V
Mounting Type: Surface Mount
Number of Outputs: 1
Frequency: 370kHz
Type: DC DC Regulator
Operating Temperature: -40°C ~ 150°C (TJ)
Applications: Automotive, Backlight
Current - Output / Channel: 1.8A
Internal Switch(s): Yes
Topology: Step-Down (Buck)
Supplier Device Package: PG-DSO-8-27
Dimming: PWM
Voltage - Supply (Min): 4.75V
Voltage - Supply (Max): 45V
Part Status: Active
auf Bestellung 14226 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
136+3.56 EUR
Mindestbestellmenge: 136
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IKB20N60H3ATMA1 IKB20N60H3_Rev1_1G.pdf?folderId=db3a3043156fd5730115f56849b61941&fileId=db3a30432a40a650012a476e38862bd0
IKB20N60H3ATMA1
Hersteller: Infineon Technologies
Description: IGBT TRENCH FS 600V 40A TO263-3
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 112 ns
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 20A
Supplier Device Package: PG-TO263-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 16ns/194ns
Switching Energy: 690µJ
Test Condition: 400V, 20A, 14.6Ohm, 15V
Gate Charge: 120 nC
Part Status: Active
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 80 A
Power - Max: 170 W
auf Bestellung 2000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1000+1.2 EUR
2000+1.11 EUR
Mindestbestellmenge: 1000
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IKB20N60H3ATMA1 IKB20N60H3_Rev1_1G.pdf?folderId=db3a3043156fd5730115f56849b61941&fileId=db3a30432a40a650012a476e38862bd0
IKB20N60H3ATMA1
Hersteller: Infineon Technologies
Description: IGBT TRENCH FS 600V 40A TO263-3
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 112 ns
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 20A
Supplier Device Package: PG-TO263-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 16ns/194ns
Switching Energy: 690µJ
Test Condition: 400V, 20A, 14.6Ohm, 15V
Gate Charge: 120 nC
Part Status: Active
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 80 A
Power - Max: 170 W
auf Bestellung 2261 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5+3.68 EUR
10+2.37 EUR
100+1.62 EUR
500+1.3 EUR
Mindestbestellmenge: 5
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IPI072N10N3 G INFNS16324-1.pdf?t.download=true&u=5oefqw
Hersteller: Infineon Technologies
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 7.2mOhm @ 80A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 90µA
Supplier Device Package: PG-TO262-3-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4910 pF @ 50 V
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
202+2.62 EUR
Mindestbestellmenge: 202
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IPI072N10N3GXK
IPI072N10N3GXK
Hersteller: Infineon Technologies
Description: MOSFET N-CH 100V 80A TO262-3
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 7.2mOhm @ 80A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 90µA
Supplier Device Package: PG-TO262-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4910 pF @ 50 V
Produkt ist nicht verfügbar
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IHY30N160R2XK
Hersteller: Infineon Technologies
Description: IGBT, N-CHANNEL
Packaging: Bulk
auf Bestellung 248 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
115+4.22 EUR
Mindestbestellmenge: 115
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IRL520NSTRLPBF irl520nspbf.pdf?fileId=5546d462533600a40153565fa45e255d
IRL520NSTRLPBF
Hersteller: Infineon Technologies
Description: MOSFET N-CH 100V 10A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 180mOhm @ 6A, 10V
Power Dissipation (Max): 3.8W (Ta), 48W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: D2PAK
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 440 pF @ 25 V
Produkt ist nicht verfügbar
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IFS75S12N3T4_B11
Hersteller: Infineon Technologies
Description: TRANSISTOR IGBT MODULE
Packaging: Bulk
auf Bestellung 200 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+172.24 EUR
Mindestbestellmenge: 3
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SKA06N06
Hersteller: Infineon Technologies
Description: IGBT WITH ANTI-PARALLEL DIODE
Produkt ist nicht verfügbar
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SLB9670VQ20FW785XUMA1 Infineon-SLB%209670VQ2.0-DataSheet-v01_00-EN.pdf?fileId=5546d4626fc1ce0b016fc78270350cd6&redirId=121746
SLB9670VQ20FW785XUMA1
Hersteller: Infineon Technologies
Description: TPM
Packaging: Tape & Reel (TR)
Package / Case: 32-VFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: SPI
Operating Temperature: -20°C ~ 85°C (TA)
Voltage - Supply: 1.65V ~ 1.98V, 3V ~ 3.6V
Program Memory Type: NVM (6.8kB)
Applications: Trusted Platform Module (TPM)
Core Processor: 16-Bit
Supplier Device Package: PG-VQFN-32-13
Part Status: Obsolete
Number of I/O: 1
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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SLB9670VQ20FW760XUMA1 Infineon-SLB%209670VQ2.0-DataSheet-v01_00-EN.pdf?fileId=5546d4626fc1ce0b016fc78270350cd6&redirId=121746
SLB9670VQ20FW760XUMA1
Hersteller: Infineon Technologies
Description: SECURITY IC'S/AUTHENTICATION IC'
Packaging: Tape & Reel (TR)
Package / Case: 32-VFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: SPI
Operating Temperature: -20°C ~ 85°C (TA)
Voltage - Supply: 1.65V ~ 3.6V
Program Memory Type: NVM (6.8kB)
Applications: Trusted Platform Module (TPM)
Core Processor: 16-Bit
Supplier Device Package: PG-VQFN-32-13
Part Status: Active
Number of I/O: 1
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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SLB9670XQ20FW760XUMA1 Infineon-SLB%209670VQ2.0-DataSheet-v01_00-EN.pdf?fileId=5546d4626fc1ce0b016fc78270350cd6&redirId=121746
SLB9670XQ20FW760XUMA1
Hersteller: Infineon Technologies
Description: SECURITY IC'S/AUTHENTICATION IC'
Packaging: Tape & Reel (TR)
Package / Case: 32-VFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: SPI
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.65V ~ 3.6V
Program Memory Type: NVM (6.8kB)
Applications: Trusted Platform Module (TPM)
Core Processor: 16-Bit
Supplier Device Package: PG-VQFN-32-13
Part Status: Obsolete
Number of I/O: 1
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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IFX24401EL V50 INFNS14039-1.pdf?t.download=true&u=5oefqw
Hersteller: Infineon Technologies
Description: IC REG LINEAR VOLTAGE REG
Packaging: Bulk
Package / Case: 14-LSSOP (0.154", 3.90mm Width) Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 30 µA
Voltage - Input (Max): 42V
Number of Regulators: 1
Supplier Device Package: PG-SSOP-14-1
Voltage - Output (Min/Fixed): 5V
Control Features: Enable
Part Status: Active
PSRR: 60dB (100Hz)
Voltage Dropout (Max): 0.5V @ 200mA
Protection Features: Over Current, Over Temperature, Short Circuit
Current - Supply (Max): 40 µA
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2500+0.22 EUR
Mindestbestellmenge: 2500
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IFX24401ELV50 INFNS14039-1.pdf?t.download=true&u=5oefqw
IFX24401ELV50
Hersteller: Infineon Technologies
Description: IC REG LINEAR VOLTAGE REG
Packaging: Bulk
Package / Case: 14-LSSOP (0.154", 3.90mm Width) Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 30 µA
Voltage - Input (Max): 42V
Number of Regulators: 1
Supplier Device Package: PG-SSOP-14-1
Voltage - Output (Min/Fixed): 5V
Control Features: Enable
Part Status: Active
PSRR: 60dB (100Hz)
Voltage Dropout (Max): 0.5V @ 200mA
Protection Features: Over Current, Over Temperature, Short Circuit
Current - Supply (Max): 40 µA
Produkt ist nicht verfügbar
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IPD90P04P4L04ATMA2 Infineon-IPD90P04P4L-04-DataSheet-v01_02-EN.pdf?fileId=db3a30432f69f146012f7829059b2dee
IPD90P04P4L04ATMA2
Hersteller: Infineon Technologies
Description: MOSFET P-CH 40V 90A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 4.3mOhm @ 90A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: PG-TO252-3-313
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +5V, -16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 176 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11570 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 7500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2500+1.26 EUR
5000+1.24 EUR
Mindestbestellmenge: 2500
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F3L11MR12W2M1B65BOMA1 Infineon-F3L11MR12W2M1_B65-DataSheet-v02_01-EN.pdf?fileId=5546d46269e1c019016a92d4066064a2
F3L11MR12W2M1B65BOMA1
Hersteller: Infineon Technologies
Description: LOW POWER EASY
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Level Inverter
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 100A
NTC Thermistor: Yes
Supplier Device Package: AG-EASY2BM-2
IGBT Type: Trench
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 40 µA
Input Capacitance (Cies) @ Vce: 7.36 nF @ 800 V
Produkt ist nicht verfügbar
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IKW75N65ET7XKSA1 Infineon-IKW75N65ET7-DataSheet-v02_01-EN.pdf?fileId=5546d46272e49d2a017351bee5af57fb
IKW75N65ET7XKSA1
Hersteller: Infineon Technologies
Description: IGBT TRENCH FS 650V 80A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 100 ns
Vce(on) (Max) @ Vge, Ic: 1.65V @ 15V, 75A
Supplier Device Package: PG-TO247-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 28ns/310ns
Switching Energy: 2.17mJ (on), 1.23mJ (off)
Test Condition: 400V, 75A, 4.7Ohm, 15V
Gate Charge: 435 nC
Part Status: Active
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 225 A
Power - Max: 333 W
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 102 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+9.77 EUR
30+5.58 EUR
Mindestbestellmenge: 2
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BSZ0602LSATMA1 Infineon-BSZ0602LS-DataSheet-v02_02-EN.pdf?fileId=5546d462700c0ae601708b98b9631427
BSZ0602LSATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 80V 13A/40A TSDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 20A, 10V
Power Dissipation (Max): 69W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 36µA
Supplier Device Package: PG-TDSON-8 FL
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2340 pF @ 40 V
Produkt ist nicht verfügbar
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BSZ0602LSATMA1 Infineon-BSZ0602LS-DataSheet-v02_02-EN.pdf?fileId=5546d462700c0ae601708b98b9631427
BSZ0602LSATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 80V 13A/40A TSDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 20A, 10V
Power Dissipation (Max): 69W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 36µA
Supplier Device Package: PG-TDSON-8 FL
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2340 pF @ 40 V
Produkt ist nicht verfügbar
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IPU60R2K1CEBKMA1 Infineon-IPU60R2K1CE-DS-v02_02-EN.pdf?fileId=5546d46249be182c0149c7e409461eac
IPU60R2K1CEBKMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 600V 2.3A TO251-3
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.3A (Tc)
Rds On (Max) @ Id, Vgs: 2.1Ohm @ 760mA, 10V
Power Dissipation (Max): 22W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 60µA
Supplier Device Package: PG-TO251-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 6.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 140 pF @ 100 V
auf Bestellung 6512 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1888+0.27 EUR
Mindestbestellmenge: 1888
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IPLK60R1K0PFD7ATMA1 Infineon-IPLK60R1K0PFD7-DataSheet-v02_00-EN.pdf?fileId=5546d4626fc1ce0b016fd791157e3d92
IPLK60R1K0PFD7ATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 600V 5.2A THIN-PAK
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.2A (Tc)
Rds On (Max) @ Id, Vgs: 1Ohm @ 1A, 10V
Power Dissipation (Max): 31.3W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 50µA
Supplier Device Package: PG-TDSON-8-52
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 230 pF @ 400 V
Produkt ist nicht verfügbar
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IPLK60R1K0PFD7ATMA1 Infineon-IPLK60R1K0PFD7-DataSheet-v02_00-EN.pdf?fileId=5546d4626fc1ce0b016fd791157e3d92
IPLK60R1K0PFD7ATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 600V 5.2A THIN-PAK
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.2A (Tc)
Rds On (Max) @ Id, Vgs: 1Ohm @ 1A, 10V
Power Dissipation (Max): 31.3W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 50µA
Supplier Device Package: PG-TDSON-8-52
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 230 pF @ 400 V
auf Bestellung 4098 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
8+2.36 EUR
10+2.1 EUR
100+1.64 EUR
500+1.36 EUR
1000+1.07 EUR
2000+1 EUR
Mindestbestellmenge: 8
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CY7C1442KV33-250AXC Infineon-CY7C1440KV33_CY7C1442KV33_CY7C1440KVE33_36-Mbit_(1_M_36_2_M_18)_Pipelined_Sync_SRAM_(With_ECC)-DataSheet-v08_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ecee95a4967&utm_source=cypress&utm_medium=referral&utm_campaign=20211
CY7C1442KV33-250AXC
Hersteller: Infineon Technologies
Description: IC SRAM 36MBIT PAR 100TQFP
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Memory Size: 36Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 3.135V ~ 3.6V
Technology: SRAM - Synchronous, SDR
Clock Frequency: 250 MHz
Memory Format: SRAM
Supplier Device Package: 100-TQFP (14x20)
Memory Interface: Parallel
Access Time: 2.6 ns
Memory Organization: 2M x 18
DigiKey Programmable: Not Verified
auf Bestellung 103 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+32.19 EUR
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TLE8457CLEXUMA1 Infineon-TLE8457CD-DS-v01_10-EN.pdf?fileId=5546d462689a790c0168a1d53be462be
TLE8457CLEXUMA1
Hersteller: Infineon Technologies
Description: IC TRANSCEIVER 1/1 PGTSON81
Packaging: Tape & Reel (TR)
Package / Case: 8-TDFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Type: Transceiver
Number of Drivers/Receivers: 1/1
Data Rate: 20kbps
Protocol: LIN
Supplier Device Package: PG-TSON-8-1
Part Status: Active
Grade: Automotive
Qualification: AEC-Q100
Produkt ist nicht verfügbar
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TLE824533SAAUMA1 Infineon-TLE82453-3SA-DS-v01_00-EN.pdf?fileId=5546d4624cb7f111014d289949d61dff
TLE824533SAAUMA1
Hersteller: Infineon Technologies
Description: IC PWR DRIVER N-CHAN 1:3 DSO-36
Packaging: Cut Tape (CT)
Features: Status Flag
Package / Case: 36-BSSOP (0.433", 11.00mm Width) Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 3
Interface: SPI
Switch Type: Relay, Solenoid Driver
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side or Low Side
Rds On (Typ): 250mOhm (Max)
Voltage - Load: 8V ~ 17V
Voltage - Supply (Vcc/Vdd): 4.75V ~ 5.25V
Current - Output (Max): 1.5A
Ratio - Input:Output: 1:3
Supplier Device Package: PG-DSO-36-54
Fault Protection: Current Limiting (Fixed), Over Temperature
Part Status: Not For New Designs
auf Bestellung 1551 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+32.14 EUR
10+25.64 EUR
25+24.02 EUR
100+22.23 EUR
250+21.38 EUR
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IPP80CN10NGXKSA1 INFNS30238-1.pdf?t.download=true&u=5oefqw
IPP80CN10NGXKSA1
Hersteller: Infineon Technologies
Description: PFET, 13A I(D), 100V, 0.08OHM, 1
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
Rds On (Max) @ Id, Vgs: 80mOhm @ 13A, 10V
Power Dissipation (Max): 31W (Tc)
Vgs(th) (Max) @ Id: 4V @ 12µA
Supplier Device Package: PG-TO220-3-123
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 716 pF @ 50 V
auf Bestellung 5891 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
443+1.03 EUR
Mindestbestellmenge: 443
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IPP80P04P4L08AKSA1 IPx80P04P4L-08_rev1.2_7-3-19.pdf
IPP80P04P4L08AKSA1
Hersteller: Infineon Technologies
Description: OPTIMOS POWER-TRANSISTOR
auf Bestellung 13567 Stücke:
Lieferzeit 10-14 Tag (e)
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IM240S6Y1BAKSA1 IM240-S6xxB.pdf
Hersteller: Infineon Technologies
Description: MODULE IPM 3PHASE 23DIP
Packaging: Tube
Package / Case: 23-DIP Module (0.573", 14.55mm)
Mounting Type: Through Hole
Type: IGBT
Configuration: 3 Phase Inverter
Voltage - Isolation: 1900Vrms
Current: 3 A
Voltage: 600 V
Produkt ist nicht verfügbar
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IM240S6Y2BAKSA1 IM240-S6xxB.pdf
Hersteller: Infineon Technologies
Description: MODULE IPM 3PHASE DIP23A
Packaging: Tube
Package / Case: 23-DIP Module (0.573", 14.55mm)
Mounting Type: Through Hole
Type: IGBT
Configuration: 3 Phase Inverter
Voltage - Isolation: 1900Vrms
Current: 3 A
Voltage: 600 V
Produkt ist nicht verfügbar
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IRFR540ZTRPBF irfr540zpbf.pdf?fileId=5546d462533600a4015356325b2c2102
IRFR540ZTRPBF
Hersteller: Infineon Technologies
Description: MOSFET N-CH 100V 35A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 28.5mOhm @ 21A, 10V
Power Dissipation (Max): 91W (Tc)
Vgs(th) (Max) @ Id: 4V @ 50µA
Supplier Device Package: TO-252AA (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 59 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1690 pF @ 25 V
auf Bestellung 3423 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
7+2.68 EUR
11+1.69 EUR
100+1.14 EUR
500+0.9 EUR
1000+0.82 EUR
Mindestbestellmenge: 7
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SAK-XC2288H200F100LABKXUMA1 INFNS28076-1.pdf?t.download=true&u=5oefqw
Hersteller: Infineon Technologies
Description: 16 BIT C166 MICROXC2200 FAMILY (
Packaging: Bulk
Package / Case: 144-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 100MHz
Program Memory Size: 1.6MB (1.6M x 8)
RAM Size: 138K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: C166SV2
Data Converters: A/D 24x10b
Core Size: 16/32-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Connectivity: CANbus, EBI/EMI, I²C, LINbus, SPI, SSC, UART/USART, USI
Peripherals: DMA, I²S, POR, PWM, WDT
Supplier Device Package: PG-LQFP-144-13
Part Status: Active
Number of I/O: 118
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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SAK-XC2797X-200F100LABKXUMA1
Hersteller: Infineon Technologies
Description: IC MCU 16/32B 1.6MB FLSH 176LQFP
Packaging: Bulk
Package / Case: 176-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 100MHz
Program Memory Size: 1.6MB (1.6M x 8)
RAM Size: 138K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: C166SV2
Data Converters: A/D 30x10b
Core Size: 16/32-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Connectivity: CANbus, EBI/EMI, I²C, LINbus, SPI, SSC, UART/USART, USI
Peripherals: I²S, POR, PWM, WDT
Supplier Device Package: PG-LQFP-176-12
Number of I/O: 150
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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TLE42712 Infineon-TLE4271-2-DS-v02_70-EN.pdf?fileId=5546d46259d9a4bf0159f97a56393e6f
TLE42712
Hersteller: Infineon Technologies
Description: IC REG LINEAR FIXED LDO REG
Packaging: Bulk
Package / Case: TO-220-7 Formed Leads
Output Type: Fixed
Mounting Type: Through Hole
Current - Output: 550mA
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Voltage - Input (Max): 40V
Number of Regulators: 1
Supplier Device Package: P-TO220-7-11
Voltage - Output (Min/Fixed): 5V
Control Features: Delay, Inhibit, Reset, Watchdog
Part Status: Active
PSRR: 54dB (100Hz)
Voltage Dropout (Max): 0.7V @ 550mA
Protection Features: Antisaturation, Over Temperature, Over Voltage, Reverse Polarity, Short Circuit
Current - Supply (Max): 90 mA
Produkt ist nicht verfügbar
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TLE4271-2S Infineon-TLE4271-2-DS-v02_70-EN.pdf?fileId=5546d46259d9a4bf0159f97a56393e6f
TLE4271-2S
Hersteller: Infineon Technologies
Description: IC REG LINEAR FIXED LDO REG
Packaging: Bulk
Package / Case: TO-220-7
Output Type: Fixed
Mounting Type: Through Hole
Current - Output: 550mA
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Voltage - Input (Max): 40V
Number of Regulators: 1
Supplier Device Package: PG-TO220-7-12
Voltage - Output (Min/Fixed): 5V
Control Features: Delay, Inhibit, Reset, Watchdog
Part Status: Active
PSRR: 54dB (100Hz)
Voltage Dropout (Max): 0.7V @ 550mA
Protection Features: Antisaturation, Over Temperature, Over Voltage, Reverse Polarity, Short Circuit
Current - Supply (Max): 90 mA
Produkt ist nicht verfügbar
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TLE42712S Infineon-TLE4271-2-DS-v02_70-EN.pdf?fileId=5546d46259d9a4bf0159f97a56393e6f
TLE42712S
Hersteller: Infineon Technologies
Description: IC REG LINEAR FIXED LDO REG
Packaging: Bulk
Package / Case: TO-220-7
Output Type: Fixed
Mounting Type: Through Hole
Current - Output: 550mA
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Voltage - Input (Max): 40V
Number of Regulators: 1
Supplier Device Package: PG-TO220-7-12
Voltage - Output (Min/Fixed): 5V
Control Features: Delay, Inhibit, Reset, Watchdog
Part Status: Active
PSRR: 54dB (100Hz)
Voltage Dropout (Max): 0.7V @ 550mA
Protection Features: Antisaturation, Over Temperature, Over Voltage, Reverse Polarity, Short Circuit
Current - Supply (Max): 90 mA
Produkt ist nicht verfügbar
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TLE4271-2 Infineon-TLE4271-2-DS-v02_70-EN.pdf?fileId=5546d46259d9a4bf0159f97a56393e6f
TLE4271-2
Hersteller: Infineon Technologies
Description: FIXED POSITIVE LDO REGULATOR
Packaging: Bulk
Package / Case: TO-220-7 Formed Leads
Output Type: Fixed
Mounting Type: Through Hole
Current - Output: 550mA
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Voltage - Input (Max): 40V
Number of Regulators: 1
Supplier Device Package: P-TO220-7-11
Voltage - Output (Min/Fixed): 5V
Control Features: Delay, Inhibit, Reset, Watchdog
Part Status: Active
PSRR: 54dB (100Hz)
Voltage Dropout (Max): 0.7V @ 550mA
Protection Features: Antisaturation, Over Temperature, Over Voltage, Reverse Polarity, Short Circuit
Current - Supply (Max): 90 mA
Produkt ist nicht verfügbar
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SAB-C161SL25MAABXUMA1 INFNS05712-1.pdf?t.download=true&u=5oefqw
SAB-C161SL25MAABXUMA1
Hersteller: Infineon Technologies
Description: LEGACY 16 BIT MICROCONTROLLER
Packaging: Bulk
Package / Case: 80-QFP
Mounting Type: Surface Mount
Speed: 25MHz
RAM Size: 2K x 8
Operating Temperature: 0°C ~ 70°C (TA)
Oscillator Type: External, Internal
Program Memory Type: ROMless
Core Processor: C166
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 4.5V ~ 5.5V
Connectivity: EBI/EMI, SPI, UART/USART
Peripherals: POR, PWM, WDT
Supplier Device Package: PG-MQFP-80-7
Part Status: Active
Number of I/O: 63
DigiKey Programmable: Not Verified
auf Bestellung 3707 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
70+7.24 EUR
Mindestbestellmenge: 70
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SAB-C161S-L25MAA INFNS05712-1.pdf?t.download=true&u=5oefqw
SAB-C161S-L25MAA
Hersteller: Infineon Technologies
Description: LEGACY 16-BIT MCU
auf Bestellung 217 Stücke:
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Anzahl Preis
75+6.63 EUR
Mindestbestellmenge: 75
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SAB-C-161S-L25M INFNS25991-1.pdf?t.download=true&u=5oefqw
SAB-C-161S-L25M
Hersteller: Infineon Technologies
Description: LEGACY 16-BIT MCU
Packaging: Bulk
Package / Case: 80-QFP
Mounting Type: Surface Mount
Speed: 25MHz
RAM Size: 2K x 8
Operating Temperature: 0°C ~ 70°C (TA)
Oscillator Type: External, Internal
Program Memory Type: ROMless
Core Processor: C166
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 4.5V ~ 5.5V
Connectivity: EBI/EMI, SPI, UART/USART
Peripherals: POR, PWM, WDT
Supplier Device Package: PG-MQFP-80-7
Part Status: Active
Number of I/O: 63
DigiKey Programmable: Not Verified
auf Bestellung 850 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
70+7.24 EUR
Mindestbestellmenge: 70
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SAB-C161RI-L16F
Hersteller: Infineon Technologies
Description: LEGACY 16-BIT MCU
Packaging: Bulk
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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SAB-C161RI-L16M
Hersteller: Infineon Technologies
Description: LEGACY 16-BIT MCU
Packaging: Bulk
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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