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ISC037N03L5ISATMA1 ISC037N03L5ISATMA1 Infineon Technologies Infineon-ISC037N03L5IS-DataSheet-v02_00-EN.pdf?fileId=5546d46270c4f93e0170e8b91008098b Description: MOSFET N-CH 30V 20A/78A TDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Ta), 78A (Tc)
Rds On (Max) @ Id, Vgs: 3.7mOhm @ 30A, 10V
Power Dissipation (Max): 2.5W (Ta), 37W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TDSON-8-6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 15 V
auf Bestellung 15000 Stücke:
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5000+0.43 EUR
10000+0.41 EUR
Mindestbestellmenge: 5000
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ISC037N03L5ISATMA1 ISC037N03L5ISATMA1 Infineon Technologies Infineon-ISC037N03L5IS-DataSheet-v02_00-EN.pdf?fileId=5546d46270c4f93e0170e8b91008098b Description: MOSFET N-CH 30V 20A/78A TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Ta), 78A (Tc)
Rds On (Max) @ Id, Vgs: 3.7mOhm @ 30A, 10V
Power Dissipation (Max): 2.5W (Ta), 37W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TDSON-8-6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 15 V
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15+1.20 EUR
17+1.05 EUR
100+0.80 EUR
500+0.63 EUR
1000+0.51 EUR
2000+0.46 EUR
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IPG20N04S412ATMA1 IPG20N04S412ATMA1 Infineon Technologies Infineon-IPG20N04S4_12-DS-v01_00-en.pdf?fileId=db3a30432ba3fa6f012bbf60c03c6c05 Description: MOSFET 2N-CH 40V 20A 8TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 41W
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 20A
Input Capacitance (Ciss) (Max) @ Vds: 1470pF @ 25V
Rds On (Max) @ Id, Vgs: 12.2mOhm @ 17A, 10V
Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 15µA
Supplier Device Package: PG-TDSON-8-4
Grade: Automotive
Qualification: AEC-Q101
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TLS4120D0EPVXUMA1 TLS4120D0EPVXUMA1 Infineon Technologies Infineon-TLS4120D0EPV-DataSheet-v01_00-EN.pdf?fileId=5546d46270c4f93e01710b576dc53b30 Description: OPTIREG SWITCHER
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TLS4120D0EPVXUMA1 TLS4120D0EPVXUMA1 Infineon Technologies Infineon-TLS4120D0EPV-DataSheet-v01_00-EN.pdf?fileId=5546d46270c4f93e01710b576dc53b30 Description: OPTIREG SWITCHER
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BFR181E6327 BFR181E6327 Infineon Technologies INFNS10732-1.pdf?t.download=true&u=5oefqw Description: LOW-NOISE TRANSISTOR
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 18.5dB
Power - Max: 175mW
Current - Collector (Ic) (Max): 20mA
Voltage - Collector Emitter Breakdown (Max): 12V
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 8V
Frequency - Transition: 8GHz
Noise Figure (dB Typ @ f): 0.9dB ~ 1.2dB @ 900MHz ~ 1.8GHz
Supplier Device Package: PG-SOT23
Part Status: Active
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3909+0.14 EUR
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BFR181WE6327 BFR181WE6327 Infineon Technologies INFNS14909-1.pdf?t.download=true&u=5oefqw Description: LOW-NOISE TRANSISTOR
Packaging: Bulk
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 19dB
Power - Max: 175mW
Current - Collector (Ic) (Max): 20mA
Voltage - Collector Emitter Breakdown (Max): 12V
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 8V
Frequency - Transition: 8GHz
Noise Figure (dB Typ @ f): 0.9dB ~ 1.2dB @ 900MHz ~ 1.8GHz
Supplier Device Package: SOT-323
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TLS850B0TEV33ATMA1 TLS850B0TEV33ATMA1 Infineon Technologies Infineon-TLS850B0TE V33-DS-v01_00-EN.pdf?fileId=5546d4625fe3678401600d3a414c6da3 Description: IC REG LIN 3.3V 500MA PG-TO252-5
Packaging: Cut Tape (CT)
Package / Case: TO-252-5, DPak (4 Leads + Tab), TO-252AD
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 500mA
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 25 µA
Voltage - Input (Max): 40V
Number of Regulators: 1
Supplier Device Package: PG-TO252-5
Voltage - Output (Min/Fixed): 3.3V
Control Features: Enable
Grade: Automotive
Part Status: Active
PSRR: 63dB (100Hz)
Voltage Dropout (Max): 0.6V @ 250mA
Protection Features: Over Current, Over Temperature
Current - Supply (Max): 33 µA
Qualification: AEC-Q100
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8+2.22 EUR
11+1.61 EUR
25+1.46 EUR
100+1.29 EUR
250+1.21 EUR
500+1.17 EUR
1000+1.13 EUR
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SPP80N03S2L05 SPP80N03S2L05 Infineon Technologies Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Part Status: Active
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IRLR2908TRLPBF-INF IRLR2908TRLPBF-INF Infineon Technologies Description: IRLR2908 - HEXFET POWER MOSFET
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 28mOhm @ 23A, 10V
Power Dissipation (Max): 120W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: D-Pak
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1890 pF @ 25 V
Produkt ist nicht verfügbar
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BCR198E6327 BCR198E6327 Infineon Technologies INFNS16386-1.pdf?t.download=true&u=5oefqw Description: BIPOLAR DIGITAL TRANSISTOR
auf Bestellung 147000 Stücke:
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9616+0.05 EUR
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BCR198TE6327 BCR198TE6327 Infineon Technologies INFNS09785-1.pdf?t.download=true&u=5oefqw Description: TRANS PREBIAS PNP 50V SOT23-3
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V
Supplier Device Package: PG-SOT23-3-3
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 190 MHz
Resistor - Base (R1): 47 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Qualification: AEC-Q101
Resistors Included: R1 and R2
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13172+0.03 EUR
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BCR198WH6327 BCR198WH6327 Infineon Technologies Infineon-BCR198SERIES-DS-v01_01-en[1].pdf?fileId=db3a304320d39d590121e8552c2f65bb Description: BIPOLAR DIGITAL TRANSISTOR
Packaging: Bulk
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V
Supplier Device Package: PG-SOT323-3-1
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 250 mW
Frequency - Transition: 190 MHz
Resistor - Base (R1): 47 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Produkt ist nicht verfügbar
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AUIR3316S-INF AUIR3316S-INF Infineon Technologies IRSDS11219-1.pdf?t.download=true&u=5oefqw Description: LATCH BASED PERIPHERAL DRIVER, 1
Packaging: Bulk
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 5.5mOhm
Input Type: Non-Inverting
Voltage - Load: 6V ~ 26V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 23A
Ratio - Input:Output: 1:1
Supplier Device Package: D2PAK
Fault Protection: Current Limiting (Adjustable), Over Temperature, Reverse Battery
Produkt ist nicht verfügbar
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BGSA133GN10E6327XTSA1 BGSA133GN10E6327XTSA1 Infineon Technologies Description: IC RF ANT DEVICE 10TSNP
Packaging: Bulk
Package / Case: 10-XFQFN
Mounting Type: Surface Mount
Function: Switch
Supplier Device Package: PG-TSNP-10-1
auf Bestellung 255000 Stücke:
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1024+0.47 EUR
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BGSA11GN10E6327XTSA1 BGSA11GN10E6327XTSA1 Infineon Technologies Infineon-BGSA11GN10-DataSheet-v03_02-EN.pdf?fileId=5546d46255dd933d0155e9dac4e809ed Description: IC RF SWITCH SPST 5GHZ TSNP10-1
Packaging: Cut Tape (CT)
Package / Case: 10-XFQFN
Impedance: 50Ohm
Mounting Type: Surface Mount
Circuit: SPST
RF Type: General Purpose
Operating Temperature: -30°C ~ 85°C
Voltage - Supply: 1.8V ~ 3.6V
Insertion Loss: 0.35dB
Frequency Range: 100MHz ~ 5GHz
Test Frequency: 2.69GHz
Isolation: 14dB
Supplier Device Package: PG-TSNP-10-1
IIP3: 75dBm
Part Status: Active
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16+1.14 EUR
18+1.00 EUR
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100+0.77 EUR
250+0.71 EUR
500+0.61 EUR
1000+0.49 EUR
Mindestbestellmenge: 16
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CY7C1041GN-10ZSXI CY7C1041GN-10ZSXI Infineon Technologies Infineon-CY7C1041GN_4-Mbit_(256K_words_16_bit)_Static_RAM-DataSheet-v05_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed82ae859a5&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Description: IC SRAM 4MBIT PARALLEL 44TSOP II
Packaging: Tray
Package / Case: 44-TSOP (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 4Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 44-TSOP II
Write Cycle Time - Word, Page: 10ns
Memory Interface: Parallel
Access Time: 10 ns
Memory Organization: 256K x 16
DigiKey Programmable: Not Verified
auf Bestellung 509 Stücke:
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2+12.95 EUR
10+11.49 EUR
25+10.96 EUR
40+10.70 EUR
135+10.04 EUR
270+9.69 EUR
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BGSA14GN10E6327XTSA1 BGSA14GN10E6327XTSA1 Infineon Technologies Infineon-BGSA14GN10-DataSheet-v03_01-EN.pdf?fileId=5546d46255dd933d0155e9e3e86f09ff Description: IC RF SWITCH SP4T 5GHZ TSNP10-1
Packaging: Tape & Reel (TR)
Features: Single Line Control
Package / Case: 10-XFQFN
Impedance: 50Ohm
Mounting Type: Surface Mount
Circuit: SP4T
RF Type: Cellular, 3G, 4G
Operating Temperature: -30°C ~ 85°C
Voltage - Supply: 1.8V ~ 3.6V
Insertion Loss: 0.46dB
Frequency Range: 100MHz ~ 5GHz
Test Frequency: 2.69GHz
Isolation: 20dB
Supplier Device Package: PG-TSNP-10-1
auf Bestellung 7500 Stücke:
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7500+0.43 EUR
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BGSA14GN10E6327XTSA1 BGSA14GN10E6327XTSA1 Infineon Technologies Infineon-BGSA14GN10-DataSheet-v03_01-EN.pdf?fileId=5546d46255dd933d0155e9e3e86f09ff Description: IC RF SWITCH SP4T 5GHZ TSNP10-1
Features: Single Line Control
Packaging: Cut Tape (CT)
Package / Case: 10-XFQFN
Impedance: 50Ohm
Mounting Type: Surface Mount
Circuit: SP4T
RF Type: Cellular, 3G, 4G
Operating Temperature: -30°C ~ 85°C
Voltage - Supply: 1.8V ~ 3.6V
Insertion Loss: 0.46dB
Frequency Range: 100MHz ~ 5GHz
Test Frequency: 2.69GHz
Isolation: 20dB
Supplier Device Package: PG-TSNP-10-1
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18+0.99 EUR
26+0.70 EUR
28+0.63 EUR
100+0.55 EUR
250+0.51 EUR
500+0.49 EUR
1000+0.47 EUR
2500+0.45 EUR
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BGSA133GN10E6327XTSA1 BGSA133GN10E6327XTSA1 Infineon Technologies Description: IC RF ANT DEVICE 10TSNP
Packaging: Tape & Reel (TR)
Package / Case: 10-XFQFN
Mounting Type: Surface Mount
Function: Switch
Supplier Device Package: PG-TSNP-10-1
Produkt ist nicht verfügbar
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CY7C1041GN-10VXI CY7C1041GN-10VXI Infineon Technologies Infineon-CY7C1041GN_4-Mbit_(256K_words_16_bit)_Static_RAM-DataSheet-v05_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed82ae859a5&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Description: IC SRAM 4MBIT PARALLEL 44SOJ
Packaging: Tube
Package / Case: 44-BSOJ (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 4Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 44-SOJ
Write Cycle Time - Word, Page: 10ns
Memory Interface: Parallel
Access Time: 10 ns
Memory Organization: 256K x 16
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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BSD235N L6327 BSD235N L6327 Infineon Technologies BSD235N_Rev2.1.pdf?folderId=db3a3043156fd573011622e10b5c1f67&fileId=db3a30431add1d95011afc70075c04e0 Description: MOSFET 2N-CH 20V 0.95A SOT363
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BSD235N L6327 BSD235N L6327 Infineon Technologies BSD235N_Rev2.1.pdf?folderId=db3a3043156fd573011622e10b5c1f67&fileId=db3a30431add1d95011afc70075c04e0 Description: MOSFET 2N-CH 20V 0.95A SOT363
Produkt ist nicht verfügbar
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BSC025N03LSGATMA1 BSC025N03LSGATMA1 Infineon Technologies BSC025N03LS_rev1.6.pdf?fileId=db3a304412b407950112b4274ff53bff Description: MOSFET N-CH 30V 25A/100A TDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 2.5mOhm @ 30A, 10V
Power Dissipation (Max): 2.5W (Ta), 83W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: PG-TDSON-8-5
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6100 pF @ 15 V
auf Bestellung 30000 Stücke:
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5000+0.89 EUR
10000+0.85 EUR
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BSC025N03LSGATMA1 BSC025N03LSGATMA1 Infineon Technologies BSC025N03LS_rev1.6.pdf?fileId=db3a304412b407950112b4274ff53bff Description: MOSFET N-CH 30V 25A/100A TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 2.5mOhm @ 30A, 10V
Power Dissipation (Max): 2.5W (Ta), 83W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: PG-TDSON-8-5
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6100 pF @ 15 V
auf Bestellung 38848 Stücke:
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8+2.25 EUR
10+1.84 EUR
100+1.43 EUR
500+1.22 EUR
1000+0.99 EUR
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BCM89071A1CUBXGT BCM89071A1CUBXGT Infineon Technologies Infineon-CYW89071_Single_Chip_Automotive_Grade_Bluetooth_Transceiver_and_Baseband_Processor-DataSheet-v09_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee1ff4c6835&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_a Description: IC RF TXRX+MCU BLUETOOTH 42UFBGA
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SPP07N600S5 SPP07N600S5 Infineon Technologies Infineon-SPP_I07N60S5-DS-v02_07-en.pdf?fileId=db3a304412b407950112b42c81144713 Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Part Status: Active
auf Bestellung 400 Stücke:
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400+1.52 EUR
Mindestbestellmenge: 400
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IPB60R299CPAATMA1 IPB60R299CPAATMA1 Infineon Technologies INFN-S-A0003614947-1.pdf?t.download=true&u=5oefqw Description: MOSFET N-CH 600V 11A TO263-3
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 299mOhm @ 6.6A, 10V
Power Dissipation (Max): 96W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 440µA
Supplier Device Package: PG-TO263-3-2
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 100 V
Qualification: AEC-Q101
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IPB100N04S2L-03ATMA2 IPB100N04S2L-03ATMA2 Infineon Technologies INFNS08598-1.pdf?t.download=true&u=5oefqw Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 3.3mOhm @ 80A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TO263-3-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 230 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6000 pF @ 25 V
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IPB100N04S2L03ATMA2 IPB100N04S2L03ATMA2 Infineon Technologies Infineon-IPP_B100N04S2L-DS-v01_00-en.pdf?fileId=db3a304412b407950112b42b9443455d&ack=t Description: MOSFET N-CH 40V 100A TO263-3
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IPB100N04S204ATMA4 IPB100N04S204ATMA4 Infineon Technologies IPx100N04S2-04.pdf Description: MOSFET N-CH 40V 100A TO263-3
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 3.3mOhm @ 80A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PG-TO263-3-2
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 172 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5300 pF @ 25 V
Qualification: AEC-Q101
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IKCM20L60GBXKMA1 IKCM20L60GBXKMA1 Infineon Technologies INFN-S-A0003820769-1.pdf?t.download=true&u=5oefqw Description: INTELLIGENT POWER MODULE (IPM)
Packaging: Bulk
Mounting Type: Through Hole
Type: IGBT
Configuration: 3 Phase
Part Status: Active
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IKCM15H60HAXXMA1 IKCM15H60HAXXMA1 Infineon Technologies Description: INTELLIGENT POWER MODULE (IPM)
Packaging: Bulk
Package / Case: 24-PowerDIP Module
Mounting Type: Through Hole
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 15A
Operating Temperature: -40°C ~ 125°C
Output Configuration: Half Bridge (3)
Voltage - Supply: 13.5V ~ 18.5V
Applications: Fan Motor Driver
Technology: IGBT
Supplier Device Package: 24-DIP
Motor Type - Stepper: Multiphase
Motor Type - AC, DC: AC, Synchronous
Part Status: Active
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IKCM10H60HAXKMA1 IKCM10H60HAXKMA1 Infineon Technologies IKCM10H60HA.pdf Description: IFPS MODULES 24MDIP
Packaging: Bulk
Package / Case: 24-PowerDIP Module (1.028", 26.10mm)
Mounting Type: Through Hole
Type: IGBT
Configuration: 3 Phase
Voltage - Isolation: 2000Vrms
Part Status: Obsolete
Current: 10 A
Voltage: 600 V
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IKCM20L60HAXKMA1 IKCM20L60HAXKMA1 Infineon Technologies IKCM20L60HA.pdf Description: IFPS MODULES 24MDIP
Packaging: Bulk
Package / Case: 24-PowerDIP Module (1.028", 26.10mm)
Mounting Type: Through Hole
Type: IGBT
Configuration: 3 Phase
Voltage - Isolation: 2000Vrms
Part Status: Obsolete
Current: 20 A
Voltage: 600 V
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IKCM20L60HDXKMA1 IKCM20L60HDXKMA1 Infineon Technologies IKCM20L60HD.pdf Description: IFPS MODULES 24MDIP
Packaging: Bulk
Package / Case: 24-PowerDIP Module (1.028", 26.10mm)
Mounting Type: Through Hole
Type: IGBT
Configuration: 3 Phase
Voltage - Isolation: 2000Vrms
Part Status: Obsolete
Current: 20 A
Voltage: 600 V
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IRFS4510TRLPBF IRFS4510TRLPBF Infineon Technologies IRSDS13318-1.pdf?t.download=true&u=5oefqw Description: MOSFET N-CH 100V 61A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 61A (Tc)
Rds On (Max) @ Id, Vgs: 13.9mOhm @ 37A, 10V
Power Dissipation (Max): 140W (Tc)
Vgs(th) (Max) @ Id: 4V @ 100µA
Supplier Device Package: PG-TO263-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 87 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3180 pF @ 50 V
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IRFS4510TRLPBF IRFS4510TRLPBF Infineon Technologies IRSDS13318-1.pdf?t.download=true&u=5oefqw Description: MOSFET N-CH 100V 61A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 61A (Tc)
Rds On (Max) @ Id, Vgs: 13.9mOhm @ 37A, 10V
Power Dissipation (Max): 140W (Tc)
Vgs(th) (Max) @ Id: 4V @ 100µA
Supplier Device Package: PG-TO263-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 87 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3180 pF @ 50 V
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BTT62001EJA BTT62001EJA Infineon Technologies INFN-S-A0000037746-1.pdf?t.download=true&u=5oefqw Description: SMART HIGH-SIDE POWER SWITCH
Features: Slew Rate Controlled
Packaging: Bulk
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 200mOhm
Input Type: Non-Inverting
Voltage - Load: 5V ~ 36V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 1.5A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-DSO-8-44
Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, Over Voltage, UVLO
Part Status: Active
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BTT62004ESAXUMA1 BTT62004ESAXUMA1 Infineon Technologies Infineon-BTT6200-4ESA-DS-v01_00-EN.pdf?fileId=5546d46269e1c019016a22035b660d8d Description: IC PWR SWTCH N-CHAN 1:1 TSDSO-24
Packaging: Cut Tape (CT)
Package / Case: 24-TSSOP (0.154", 3.90mm Width) Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 4
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 200mOhm
Input Type: Non-Inverting
Voltage - Load: 5V ~ 36V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 1A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-TSDSO-24-21
Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, Over Voltage
Grade: Automotive
Part Status: Active
Qualification: AEC-Q100
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BTT62001ENAXUMA1 BTT62001ENAXUMA1 Infineon Technologies Infineon-BTT6200-1ENA-DS-v01_00-EN.pdf?fileId=5546d462636cc8fb01645f3a31f312e9 Description: IC PWR SWITCH N-CHAN 1:1 TDSO-8
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 200mOhm
Input Type: Non-Inverting
Voltage - Load: 8V ~ 36V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 1.5A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-TDSO-8-31
Fault Protection: Over Temperature, Over Voltage, Short Circuit
Grade: Automotive
Qualification: AEC-Q100
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ESD239B1W0201E6327XTSA1 ESD239B1W0201E6327XTSA1 Infineon Technologies Infineon-ESD239-B1-W0201-DS-v01_00-EN.pdf?fileId=5546d4625cc9456a015ce93613b14885 Description: TVS DIODE 22VWM 26.5VC WLL-2-3
Packaging: Tape & Reel (TR)
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C
Applications: General Purpose
Capacitance @ Frequency: 3.2pF @ 1GHz
Current - Peak Pulse (10/1000µs): 3A (8/20µs)
Voltage - Reverse Standoff (Typ): 22V
Supplier Device Package: WLL-2-3
Bidirectional Channels: 1
Voltage - Clamping (Max) @ Ipp: 26.5V
Power - Peak Pulse: 80W
Power Line Protection: No
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ESD239B1W0201E6327XTSA1 ESD239B1W0201E6327XTSA1 Infineon Technologies Infineon-ESD239-B1-W0201-DS-v01_00-EN.pdf?fileId=5546d4625cc9456a015ce93613b14885 Description: TVS DIODE 22VWM 26.5VC WLL-2-3
Packaging: Cut Tape (CT)
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C
Applications: General Purpose
Capacitance @ Frequency: 3.2pF @ 1GHz
Current - Peak Pulse (10/1000µs): 3A (8/20µs)
Voltage - Reverse Standoff (Typ): 22V
Supplier Device Package: WLL-2-3
Bidirectional Channels: 1
Voltage - Clamping (Max) @ Ipp: 26.5V
Power - Peak Pulse: 80W
Power Line Protection: No
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IPA180N10N3GXKSA1 IPA180N10N3GXKSA1 Infineon Technologies IPA180N10N3+G_Rev2.2.pdf?folderId=db3a304313b8b5a60113cee8763b02d7&fileId=db3a30432239cccd0122602bfa617f29 Description: MOSFET N-CH 100V 28A TO220-FP
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 28A, 10V
Power Dissipation (Max): 30W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 35µA
Supplier Device Package: PG-TO220-FP
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 50 V
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IR3596MGB04TRP Infineon Technologies Description: IC DC/DC MULTIPHASE CTLR
Produkt ist nicht verfügbar
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CY25404ZXI216 CY25404ZXI216 Infineon Technologies Infineon-CY25404_QUAD_PLL_PROGRAMMABLE_CLOCK_GENERATOR_WITH_SPREAD_SPECTRUM-AdditionalTechnicalInformation-v09_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec65e4e3c93&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe Description: TSBU
Packaging: Tube
DigiKey Programmable: Not Verified
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IPW50R199CP IPW50R199CP Infineon Technologies INFNS16481-1.pdf?t.download=true&u=5oefqw Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 199mOhm @ 9.9A, 10V
Power Dissipation (Max): 139W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 660µA
Supplier Device Package: PG-TO247-3-21
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 100 V
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BCR602XTSA1 BCR602XTSA1 Infineon Technologies Infineon-BCR602-DS-v01_01-EN.pdf?fileId=5546d46268554f4a016855acb7e80020 Description: IC LED DRVR LIN PWM 10MA SOT23-6
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Number of Outputs: 1
Type: Linear
Applications: LED Lighting
Current - Output / Channel: 10mA
Internal Switch(s): No
Topology: Linear
Supplier Device Package: PG-SOT23-6
Dimming: Analog, PWM
Voltage - Supply (Max): 60V
Part Status: Active
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BCR602XTSA1 BCR602XTSA1 Infineon Technologies Infineon-BCR602-DS-v01_01-EN.pdf?fileId=5546d46268554f4a016855acb7e80020 Description: IC LED DRVR LIN PWM 10MA SOT23-6
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Number of Outputs: 1
Type: Linear
Applications: LED Lighting
Current - Output / Channel: 10mA
Internal Switch(s): No
Topology: Linear
Supplier Device Package: PG-SOT23-6
Dimming: Analog, PWM
Voltage - Supply (Max): 60V
Part Status: Active
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SLE-5532-M3.2 Infineon Technologies Description: INFINEON CHIP CARD INTELLIGENT 2
auf Bestellung 7690 Stücke:
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BSP89H6327XTSA1 BSP89H6327XTSA1 Infineon Technologies Infineon-BSP89-DS-v02_02-en.pdf?fileId=db3a30433b47825b013b4b8a07f90d55 Description: MOSFET N-CH 240V 350MA SOT223-4
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 350mA (Ta)
Rds On (Max) @ Id, Vgs: 6Ohm @ 350mA, 10V
Power Dissipation (Max): 1.8W (Ta)
Vgs(th) (Max) @ Id: 1.8V @ 108µA
Supplier Device Package: PG-SOT223-4
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 240 V
Gate Charge (Qg) (Max) @ Vgs: 6.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 140 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
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BSP89H6327XTSA1 BSP89H6327XTSA1 Infineon Technologies Infineon-BSP89-DS-v02_02-en.pdf?fileId=db3a30433b47825b013b4b8a07f90d55 Description: MOSFET N-CH 240V 350MA SOT223-4
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 350mA (Ta)
Rds On (Max) @ Id, Vgs: 6Ohm @ 350mA, 10V
Power Dissipation (Max): 1.8W (Ta)
Vgs(th) (Max) @ Id: 1.8V @ 108µA
Supplier Device Package: PG-SOT223-4
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 240 V
Gate Charge (Qg) (Max) @ Vgs: 6.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 140 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
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IM240M6Z1BALSA1 Infineon Technologies IM240-M6xxB.pdf Description: MODULE IPM 3PHASE SOP23
Packaging: Tube
Package / Case: 23-PowerSMD Module, Gull Wing
Mounting Type: Surface Mount
Type: IGBT
Configuration: 3 Phase Inverter
Voltage - Isolation: 1900Vrms
Current: 4 A
Voltage: 600 V
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IM240S6Z1BALSA1 Infineon Technologies IM240-S6xxB.pdf Description: MODULE IPM 3PHASE SOP23
Packaging: Tube
Package / Case: 23-SMD Module
Mounting Type: Surface Mount
Type: IGBT
Configuration: 3 Phase Inverter
Voltage - Isolation: 1900Vrms
Current: 3 A
Voltage: 600 V
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TLE8718SAAUMA4 TLE8718SAAUMA4 Infineon Technologies Infineon-TLE8718SA-DS-v01_01-en.pdf?fileId=db3a304339bdde1f0139c4c4cb7c58df Description: IC PWR SWITCH N-CH 1:18 DSO-36
Packaging: Cut Tape (CT)
Package / Case: 36-BSSOP (0.433", 11.00mm Width) Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 18
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Low Side
Voltage - Load: 4.5V ~ 5.5V
Ratio - Input:Output: 1:18
Supplier Device Package: PG-DSO-36-54
Fault Protection: Over Temperature, Short Circuit, UVLO
Grade: Automotive
Part Status: Active
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BTS500251TEAAUMA1 BTS500251TEAAUMA1 Infineon Technologies Infineon-BTS50025-1TEA-DS-V01_00-EN-DataSheet-v01_00-EN.pdf?fileId=5546d4626cb27db2016d4322f14b7d2a Description: HIC-PROFET
Packaging: Tape & Reel (TR)
Package / Case: TO-252-5, DPak (4 Leads + Tab), TO-252AD
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 5mOhm
Input Type: Non-Inverting
Voltage - Load: 5.8V ~ 18V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 24A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-TO252-5-11
Fault Protection: Over Temperature, Over Voltage, Reverse Battery, Short Circuit
Part Status: Active
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
2500+3.56 EUR
Mindestbestellmenge: 2500
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PSB50501ELV1.3-G Infineon Technologies Description: AMAZON-E (DFE) ADSL CHIP
Packaging: Bulk
auf Bestellung 3520 Stücke:
Lieferzeit 10-14 Tag (e)
31+15.32 EUR
Mindestbestellmenge: 31
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DEMOBRDTLD5095ELV1TOBO1 DEMOBRDTLD5095ELV1TOBO1 Infineon Technologies DEMOBRDTLD5095ELV1TOBO1_Web.pdf Description: EVAL BOARD FOR TLD5095EL
Packaging: Box
Voltage - Output: 4.5V ~ 40V
Voltage - Input: 12V ~ 45V
Contents: Board(s)
Utilized IC / Part: TLD5095EL
Supplied Contents: Board(s)
Outputs and Type: 1 Non-Isolated Output
auf Bestellung 3 Stücke:
Lieferzeit 10-14 Tag (e)
1+221.80 EUR
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2PS12017E34W32132NOSA1 2PS12017E34W32132NOSA1 Infineon Technologies Infineon-2PS12017E34W32132-DS-v02_01-en_de.pdf?fileId=db3a304332fc1ee7013317532873727f Description: MODULE IGBT STACK A-PS4-1
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -25°C ~ 55°C
NTC Thermistor: No
Supplier Device Package: Module
Produkt ist nicht verfügbar
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BFP640E6327 BFP640E6327 Infineon Technologies INFNS10679-1.pdf?t.download=true&u=5oefqw Description: RF TRANS NPN 4.5V 40GHZ PGSOT343
Packaging: Bulk
Package / Case: SC-82A, SOT-343
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 24dB
Power - Max: 200mW
Current - Collector (Ic) (Max): 50mA
Voltage - Collector Emitter Breakdown (Max): 4.5V
DC Current Gain (hFE) (Min) @ Ic, Vce: 110 @ 30mA, 3V
Frequency - Transition: 40GHz
Noise Figure (dB Typ @ f): 0.65dB ~ 1.2dB @ 1.8GHz ~ 6GHz
Supplier Device Package: PG-SOT343-4
Part Status: Active
auf Bestellung 26583 Stücke:
Lieferzeit 10-14 Tag (e)
866+0.57 EUR
Mindestbestellmenge: 866
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ISC037N03L5ISATMA1 Infineon-ISC037N03L5IS-DataSheet-v02_00-EN.pdf?fileId=5546d46270c4f93e0170e8b91008098b
ISC037N03L5ISATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 30V 20A/78A TDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Ta), 78A (Tc)
Rds On (Max) @ Id, Vgs: 3.7mOhm @ 30A, 10V
Power Dissipation (Max): 2.5W (Ta), 37W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TDSON-8-6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 15 V
auf Bestellung 15000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5000+0.43 EUR
10000+0.41 EUR
Mindestbestellmenge: 5000
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ISC037N03L5ISATMA1 Infineon-ISC037N03L5IS-DataSheet-v02_00-EN.pdf?fileId=5546d46270c4f93e0170e8b91008098b
ISC037N03L5ISATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 30V 20A/78A TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Ta), 78A (Tc)
Rds On (Max) @ Id, Vgs: 3.7mOhm @ 30A, 10V
Power Dissipation (Max): 2.5W (Ta), 37W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TDSON-8-6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 15 V
auf Bestellung 18934 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
15+1.20 EUR
17+1.05 EUR
100+0.80 EUR
500+0.63 EUR
1000+0.51 EUR
2000+0.46 EUR
Mindestbestellmenge: 15
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IPG20N04S412ATMA1 Infineon-IPG20N04S4_12-DS-v01_00-en.pdf?fileId=db3a30432ba3fa6f012bbf60c03c6c05
IPG20N04S412ATMA1
Hersteller: Infineon Technologies
Description: MOSFET 2N-CH 40V 20A 8TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 41W
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 20A
Input Capacitance (Ciss) (Max) @ Vds: 1470pF @ 25V
Rds On (Max) @ Id, Vgs: 12.2mOhm @ 17A, 10V
Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 15µA
Supplier Device Package: PG-TDSON-8-4
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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TLS4120D0EPVXUMA1 Infineon-TLS4120D0EPV-DataSheet-v01_00-EN.pdf?fileId=5546d46270c4f93e01710b576dc53b30
TLS4120D0EPVXUMA1
Hersteller: Infineon Technologies
Description: OPTIREG SWITCHER
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
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TLS4120D0EPVXUMA1 Infineon-TLS4120D0EPV-DataSheet-v01_00-EN.pdf?fileId=5546d46270c4f93e01710b576dc53b30
TLS4120D0EPVXUMA1
Hersteller: Infineon Technologies
Description: OPTIREG SWITCHER
auf Bestellung 5200 Stücke:
Lieferzeit 10-14 Tag (e)
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BFR181E6327 INFNS10732-1.pdf?t.download=true&u=5oefqw
BFR181E6327
Hersteller: Infineon Technologies
Description: LOW-NOISE TRANSISTOR
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 18.5dB
Power - Max: 175mW
Current - Collector (Ic) (Max): 20mA
Voltage - Collector Emitter Breakdown (Max): 12V
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 8V
Frequency - Transition: 8GHz
Noise Figure (dB Typ @ f): 0.9dB ~ 1.2dB @ 900MHz ~ 1.8GHz
Supplier Device Package: PG-SOT23
Part Status: Active
auf Bestellung 54000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3909+0.14 EUR
Mindestbestellmenge: 3909
Im Einkaufswagen  Stück im Wert von  UAH
BFR181WE6327 INFNS14909-1.pdf?t.download=true&u=5oefqw
BFR181WE6327
Hersteller: Infineon Technologies
Description: LOW-NOISE TRANSISTOR
Packaging: Bulk
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 19dB
Power - Max: 175mW
Current - Collector (Ic) (Max): 20mA
Voltage - Collector Emitter Breakdown (Max): 12V
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 8V
Frequency - Transition: 8GHz
Noise Figure (dB Typ @ f): 0.9dB ~ 1.2dB @ 900MHz ~ 1.8GHz
Supplier Device Package: SOT-323
Produkt ist nicht verfügbar
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TLS850B0TEV33ATMA1 Infineon-TLS850B0TE V33-DS-v01_00-EN.pdf?fileId=5546d4625fe3678401600d3a414c6da3
TLS850B0TEV33ATMA1
Hersteller: Infineon Technologies
Description: IC REG LIN 3.3V 500MA PG-TO252-5
Packaging: Cut Tape (CT)
Package / Case: TO-252-5, DPak (4 Leads + Tab), TO-252AD
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 500mA
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 25 µA
Voltage - Input (Max): 40V
Number of Regulators: 1
Supplier Device Package: PG-TO252-5
Voltage - Output (Min/Fixed): 3.3V
Control Features: Enable
Grade: Automotive
Part Status: Active
PSRR: 63dB (100Hz)
Voltage Dropout (Max): 0.6V @ 250mA
Protection Features: Over Current, Over Temperature
Current - Supply (Max): 33 µA
Qualification: AEC-Q100
auf Bestellung 3171 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
8+2.22 EUR
11+1.61 EUR
25+1.46 EUR
100+1.29 EUR
250+1.21 EUR
500+1.17 EUR
1000+1.13 EUR
Mindestbestellmenge: 8
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SPP80N03S2L05
SPP80N03S2L05
Hersteller: Infineon Technologies
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Part Status: Active
Produkt ist nicht verfügbar
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IRLR2908TRLPBF-INF
IRLR2908TRLPBF-INF
Hersteller: Infineon Technologies
Description: IRLR2908 - HEXFET POWER MOSFET
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 28mOhm @ 23A, 10V
Power Dissipation (Max): 120W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: D-Pak
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1890 pF @ 25 V
Produkt ist nicht verfügbar
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BCR198E6327 INFNS16386-1.pdf?t.download=true&u=5oefqw
BCR198E6327
Hersteller: Infineon Technologies
Description: BIPOLAR DIGITAL TRANSISTOR
auf Bestellung 147000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
9616+0.05 EUR
Mindestbestellmenge: 9616
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BCR198TE6327 INFNS09785-1.pdf?t.download=true&u=5oefqw
BCR198TE6327
Hersteller: Infineon Technologies
Description: TRANS PREBIAS PNP 50V SOT23-3
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V
Supplier Device Package: PG-SOT23-3-3
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 190 MHz
Resistor - Base (R1): 47 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Qualification: AEC-Q101
Resistors Included: R1 and R2
auf Bestellung 27000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
13172+0.03 EUR
Mindestbestellmenge: 13172
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BCR198WH6327 Infineon-BCR198SERIES-DS-v01_01-en[1].pdf?fileId=db3a304320d39d590121e8552c2f65bb
BCR198WH6327
Hersteller: Infineon Technologies
Description: BIPOLAR DIGITAL TRANSISTOR
Packaging: Bulk
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V
Supplier Device Package: PG-SOT323-3-1
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 250 mW
Frequency - Transition: 190 MHz
Resistor - Base (R1): 47 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Produkt ist nicht verfügbar
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AUIR3316S-INF IRSDS11219-1.pdf?t.download=true&u=5oefqw
AUIR3316S-INF
Hersteller: Infineon Technologies
Description: LATCH BASED PERIPHERAL DRIVER, 1
Packaging: Bulk
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 5.5mOhm
Input Type: Non-Inverting
Voltage - Load: 6V ~ 26V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 23A
Ratio - Input:Output: 1:1
Supplier Device Package: D2PAK
Fault Protection: Current Limiting (Adjustable), Over Temperature, Reverse Battery
Produkt ist nicht verfügbar
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BGSA133GN10E6327XTSA1
BGSA133GN10E6327XTSA1
Hersteller: Infineon Technologies
Description: IC RF ANT DEVICE 10TSNP
Packaging: Bulk
Package / Case: 10-XFQFN
Mounting Type: Surface Mount
Function: Switch
Supplier Device Package: PG-TSNP-10-1
auf Bestellung 255000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1024+0.47 EUR
Mindestbestellmenge: 1024
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BGSA11GN10E6327XTSA1 Infineon-BGSA11GN10-DataSheet-v03_02-EN.pdf?fileId=5546d46255dd933d0155e9dac4e809ed
BGSA11GN10E6327XTSA1
Hersteller: Infineon Technologies
Description: IC RF SWITCH SPST 5GHZ TSNP10-1
Packaging: Cut Tape (CT)
Package / Case: 10-XFQFN
Impedance: 50Ohm
Mounting Type: Surface Mount
Circuit: SPST
RF Type: General Purpose
Operating Temperature: -30°C ~ 85°C
Voltage - Supply: 1.8V ~ 3.6V
Insertion Loss: 0.35dB
Frequency Range: 100MHz ~ 5GHz
Test Frequency: 2.69GHz
Isolation: 14dB
Supplier Device Package: PG-TSNP-10-1
IIP3: 75dBm
Part Status: Active
auf Bestellung 1064 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
16+1.14 EUR
18+1.00 EUR
25+0.94 EUR
100+0.77 EUR
250+0.71 EUR
500+0.61 EUR
1000+0.49 EUR
Mindestbestellmenge: 16
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CY7C1041GN-10ZSXI Infineon-CY7C1041GN_4-Mbit_(256K_words_16_bit)_Static_RAM-DataSheet-v05_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed82ae859a5&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
CY7C1041GN-10ZSXI
Hersteller: Infineon Technologies
Description: IC SRAM 4MBIT PARALLEL 44TSOP II
Packaging: Tray
Package / Case: 44-TSOP (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 4Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 44-TSOP II
Write Cycle Time - Word, Page: 10ns
Memory Interface: Parallel
Access Time: 10 ns
Memory Organization: 256K x 16
DigiKey Programmable: Not Verified
auf Bestellung 509 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+12.95 EUR
10+11.49 EUR
25+10.96 EUR
40+10.70 EUR
135+10.04 EUR
270+9.69 EUR
Mindestbestellmenge: 2
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BGSA14GN10E6327XTSA1 Infineon-BGSA14GN10-DataSheet-v03_01-EN.pdf?fileId=5546d46255dd933d0155e9e3e86f09ff
BGSA14GN10E6327XTSA1
Hersteller: Infineon Technologies
Description: IC RF SWITCH SP4T 5GHZ TSNP10-1
Packaging: Tape & Reel (TR)
Features: Single Line Control
Package / Case: 10-XFQFN
Impedance: 50Ohm
Mounting Type: Surface Mount
Circuit: SP4T
RF Type: Cellular, 3G, 4G
Operating Temperature: -30°C ~ 85°C
Voltage - Supply: 1.8V ~ 3.6V
Insertion Loss: 0.46dB
Frequency Range: 100MHz ~ 5GHz
Test Frequency: 2.69GHz
Isolation: 20dB
Supplier Device Package: PG-TSNP-10-1
auf Bestellung 7500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
7500+0.43 EUR
Mindestbestellmenge: 7500
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BGSA14GN10E6327XTSA1 Infineon-BGSA14GN10-DataSheet-v03_01-EN.pdf?fileId=5546d46255dd933d0155e9e3e86f09ff
BGSA14GN10E6327XTSA1
Hersteller: Infineon Technologies
Description: IC RF SWITCH SP4T 5GHZ TSNP10-1
Features: Single Line Control
Packaging: Cut Tape (CT)
Package / Case: 10-XFQFN
Impedance: 50Ohm
Mounting Type: Surface Mount
Circuit: SP4T
RF Type: Cellular, 3G, 4G
Operating Temperature: -30°C ~ 85°C
Voltage - Supply: 1.8V ~ 3.6V
Insertion Loss: 0.46dB
Frequency Range: 100MHz ~ 5GHz
Test Frequency: 2.69GHz
Isolation: 20dB
Supplier Device Package: PG-TSNP-10-1
auf Bestellung 11856 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
18+0.99 EUR
26+0.70 EUR
28+0.63 EUR
100+0.55 EUR
250+0.51 EUR
500+0.49 EUR
1000+0.47 EUR
2500+0.45 EUR
Mindestbestellmenge: 18
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BGSA133GN10E6327XTSA1
BGSA133GN10E6327XTSA1
Hersteller: Infineon Technologies
Description: IC RF ANT DEVICE 10TSNP
Packaging: Tape & Reel (TR)
Package / Case: 10-XFQFN
Mounting Type: Surface Mount
Function: Switch
Supplier Device Package: PG-TSNP-10-1
Produkt ist nicht verfügbar
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CY7C1041GN-10VXI Infineon-CY7C1041GN_4-Mbit_(256K_words_16_bit)_Static_RAM-DataSheet-v05_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed82ae859a5&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
CY7C1041GN-10VXI
Hersteller: Infineon Technologies
Description: IC SRAM 4MBIT PARALLEL 44SOJ
Packaging: Tube
Package / Case: 44-BSOJ (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 4Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 44-SOJ
Write Cycle Time - Word, Page: 10ns
Memory Interface: Parallel
Access Time: 10 ns
Memory Organization: 256K x 16
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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BSD235N L6327 BSD235N_Rev2.1.pdf?folderId=db3a3043156fd573011622e10b5c1f67&fileId=db3a30431add1d95011afc70075c04e0
BSD235N L6327
Hersteller: Infineon Technologies
Description: MOSFET 2N-CH 20V 0.95A SOT363
Produkt ist nicht verfügbar
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BSD235N L6327 BSD235N_Rev2.1.pdf?folderId=db3a3043156fd573011622e10b5c1f67&fileId=db3a30431add1d95011afc70075c04e0
BSD235N L6327
Hersteller: Infineon Technologies
Description: MOSFET 2N-CH 20V 0.95A SOT363
Produkt ist nicht verfügbar
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BSC025N03LSGATMA1 BSC025N03LS_rev1.6.pdf?fileId=db3a304412b407950112b4274ff53bff
BSC025N03LSGATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 30V 25A/100A TDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 2.5mOhm @ 30A, 10V
Power Dissipation (Max): 2.5W (Ta), 83W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: PG-TDSON-8-5
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6100 pF @ 15 V
auf Bestellung 30000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5000+0.89 EUR
10000+0.85 EUR
Mindestbestellmenge: 5000
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BSC025N03LSGATMA1 BSC025N03LS_rev1.6.pdf?fileId=db3a304412b407950112b4274ff53bff
BSC025N03LSGATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 30V 25A/100A TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 2.5mOhm @ 30A, 10V
Power Dissipation (Max): 2.5W (Ta), 83W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: PG-TDSON-8-5
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6100 pF @ 15 V
auf Bestellung 38848 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
8+2.25 EUR
10+1.84 EUR
100+1.43 EUR
500+1.22 EUR
1000+0.99 EUR
2000+0.93 EUR
Mindestbestellmenge: 8
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BCM89071A1CUBXGT Infineon-CYW89071_Single_Chip_Automotive_Grade_Bluetooth_Transceiver_and_Baseband_Processor-DataSheet-v09_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee1ff4c6835&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_a
BCM89071A1CUBXGT
Hersteller: Infineon Technologies
Description: IC RF TXRX+MCU BLUETOOTH 42UFBGA
Produkt ist nicht verfügbar
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SPP07N600S5 Infineon-SPP_I07N60S5-DS-v02_07-en.pdf?fileId=db3a304412b407950112b42c81144713
SPP07N600S5
Hersteller: Infineon Technologies
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Part Status: Active
auf Bestellung 400 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
400+1.52 EUR
Mindestbestellmenge: 400
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IPB60R299CPAATMA1 INFN-S-A0003614947-1.pdf?t.download=true&u=5oefqw
IPB60R299CPAATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 600V 11A TO263-3
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 299mOhm @ 6.6A, 10V
Power Dissipation (Max): 96W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 440µA
Supplier Device Package: PG-TO263-3-2
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 100 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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IPB100N04S2L-03ATMA2 INFNS08598-1.pdf?t.download=true&u=5oefqw
IPB100N04S2L-03ATMA2
Hersteller: Infineon Technologies
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 3.3mOhm @ 80A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TO263-3-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 230 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6000 pF @ 25 V
auf Bestellung 17740 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
144+3.68 EUR
Mindestbestellmenge: 144
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IPB100N04S2L03ATMA2 Infineon-IPP_B100N04S2L-DS-v01_00-en.pdf?fileId=db3a304412b407950112b42b9443455d&ack=t
IPB100N04S2L03ATMA2
Hersteller: Infineon Technologies
Description: MOSFET N-CH 40V 100A TO263-3
auf Bestellung 34342 Stücke:
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Anzahl Preis
144+3.55 EUR
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IPB100N04S204ATMA4 IPx100N04S2-04.pdf
IPB100N04S204ATMA4
Hersteller: Infineon Technologies
Description: MOSFET N-CH 40V 100A TO263-3
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 3.3mOhm @ 80A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PG-TO263-3-2
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 172 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5300 pF @ 25 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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IKCM20L60GBXKMA1 INFN-S-A0003820769-1.pdf?t.download=true&u=5oefqw
IKCM20L60GBXKMA1
Hersteller: Infineon Technologies
Description: INTELLIGENT POWER MODULE (IPM)
Packaging: Bulk
Mounting Type: Through Hole
Type: IGBT
Configuration: 3 Phase
Part Status: Active
auf Bestellung 6655 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
64+7.32 EUR
Mindestbestellmenge: 64
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IKCM15H60HAXXMA1
IKCM15H60HAXXMA1
Hersteller: Infineon Technologies
Description: INTELLIGENT POWER MODULE (IPM)
Packaging: Bulk
Package / Case: 24-PowerDIP Module
Mounting Type: Through Hole
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 15A
Operating Temperature: -40°C ~ 125°C
Output Configuration: Half Bridge (3)
Voltage - Supply: 13.5V ~ 18.5V
Applications: Fan Motor Driver
Technology: IGBT
Supplier Device Package: 24-DIP
Motor Type - Stepper: Multiphase
Motor Type - AC, DC: AC, Synchronous
Part Status: Active
Produkt ist nicht verfügbar
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IKCM10H60HAXKMA1 IKCM10H60HA.pdf
IKCM10H60HAXKMA1
Hersteller: Infineon Technologies
Description: IFPS MODULES 24MDIP
Packaging: Bulk
Package / Case: 24-PowerDIP Module (1.028", 26.10mm)
Mounting Type: Through Hole
Type: IGBT
Configuration: 3 Phase
Voltage - Isolation: 2000Vrms
Part Status: Obsolete
Current: 10 A
Voltage: 600 V
auf Bestellung 624 Stücke:
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Anzahl Preis
50+9.41 EUR
Mindestbestellmenge: 50
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IKCM20L60HAXKMA1 IKCM20L60HA.pdf
IKCM20L60HAXKMA1
Hersteller: Infineon Technologies
Description: IFPS MODULES 24MDIP
Packaging: Bulk
Package / Case: 24-PowerDIP Module (1.028", 26.10mm)
Mounting Type: Through Hole
Type: IGBT
Configuration: 3 Phase
Voltage - Isolation: 2000Vrms
Part Status: Obsolete
Current: 20 A
Voltage: 600 V
auf Bestellung 513 Stücke:
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Anzahl Preis
41+11.42 EUR
Mindestbestellmenge: 41
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IKCM20L60HDXKMA1 IKCM20L60HD.pdf
IKCM20L60HDXKMA1
Hersteller: Infineon Technologies
Description: IFPS MODULES 24MDIP
Packaging: Bulk
Package / Case: 24-PowerDIP Module (1.028", 26.10mm)
Mounting Type: Through Hole
Type: IGBT
Configuration: 3 Phase
Voltage - Isolation: 2000Vrms
Part Status: Obsolete
Current: 20 A
Voltage: 600 V
auf Bestellung 560 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
30+15.69 EUR
Mindestbestellmenge: 30
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IRFS4510TRLPBF IRSDS13318-1.pdf?t.download=true&u=5oefqw
IRFS4510TRLPBF
Hersteller: Infineon Technologies
Description: MOSFET N-CH 100V 61A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 61A (Tc)
Rds On (Max) @ Id, Vgs: 13.9mOhm @ 37A, 10V
Power Dissipation (Max): 140W (Tc)
Vgs(th) (Max) @ Id: 4V @ 100µA
Supplier Device Package: PG-TO263-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 87 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3180 pF @ 50 V
auf Bestellung 1600 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
800+1.55 EUR
Mindestbestellmenge: 800
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IRFS4510TRLPBF IRSDS13318-1.pdf?t.download=true&u=5oefqw
IRFS4510TRLPBF
Hersteller: Infineon Technologies
Description: MOSFET N-CH 100V 61A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 61A (Tc)
Rds On (Max) @ Id, Vgs: 13.9mOhm @ 37A, 10V
Power Dissipation (Max): 140W (Tc)
Vgs(th) (Max) @ Id: 4V @ 100µA
Supplier Device Package: PG-TO263-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 87 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3180 pF @ 50 V
auf Bestellung 1600 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+4.86 EUR
10+3.15 EUR
100+2.17 EUR
Mindestbestellmenge: 4
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BTT62001EJA INFN-S-A0000037746-1.pdf?t.download=true&u=5oefqw
BTT62001EJA
Hersteller: Infineon Technologies
Description: SMART HIGH-SIDE POWER SWITCH
Features: Slew Rate Controlled
Packaging: Bulk
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 200mOhm
Input Type: Non-Inverting
Voltage - Load: 5V ~ 36V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 1.5A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-DSO-8-44
Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, Over Voltage, UVLO
Part Status: Active
Produkt ist nicht verfügbar
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BTT62004ESAXUMA1 Infineon-BTT6200-4ESA-DS-v01_00-EN.pdf?fileId=5546d46269e1c019016a22035b660d8d
BTT62004ESAXUMA1
Hersteller: Infineon Technologies
Description: IC PWR SWTCH N-CHAN 1:1 TSDSO-24
Packaging: Cut Tape (CT)
Package / Case: 24-TSSOP (0.154", 3.90mm Width) Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 4
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 200mOhm
Input Type: Non-Inverting
Voltage - Load: 5V ~ 36V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 1A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-TSDSO-24-21
Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, Over Voltage
Grade: Automotive
Part Status: Active
Qualification: AEC-Q100
auf Bestellung 16686 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+6.07 EUR
10+4.57 EUR
25+4.20 EUR
100+3.79 EUR
250+3.60 EUR
500+3.48 EUR
1000+3.38 EUR
Mindestbestellmenge: 3
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BTT62001ENAXUMA1 Infineon-BTT6200-1ENA-DS-v01_00-EN.pdf?fileId=5546d462636cc8fb01645f3a31f312e9
BTT62001ENAXUMA1
Hersteller: Infineon Technologies
Description: IC PWR SWITCH N-CHAN 1:1 TDSO-8
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 200mOhm
Input Type: Non-Inverting
Voltage - Load: 8V ~ 36V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 1.5A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-TDSO-8-31
Fault Protection: Over Temperature, Over Voltage, Short Circuit
Grade: Automotive
Qualification: AEC-Q100
auf Bestellung 4041 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
7+2.62 EUR
10+1.92 EUR
25+1.74 EUR
100+1.55 EUR
250+1.46 EUR
500+1.40 EUR
1000+1.36 EUR
Mindestbestellmenge: 7
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ESD239B1W0201E6327XTSA1 Infineon-ESD239-B1-W0201-DS-v01_00-EN.pdf?fileId=5546d4625cc9456a015ce93613b14885
ESD239B1W0201E6327XTSA1
Hersteller: Infineon Technologies
Description: TVS DIODE 22VWM 26.5VC WLL-2-3
Packaging: Tape & Reel (TR)
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C
Applications: General Purpose
Capacitance @ Frequency: 3.2pF @ 1GHz
Current - Peak Pulse (10/1000µs): 3A (8/20µs)
Voltage - Reverse Standoff (Typ): 22V
Supplier Device Package: WLL-2-3
Bidirectional Channels: 1
Voltage - Clamping (Max) @ Ipp: 26.5V
Power - Peak Pulse: 80W
Power Line Protection: No
auf Bestellung 15000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
15000+0.04 EUR
Mindestbestellmenge: 15000
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ESD239B1W0201E6327XTSA1 Infineon-ESD239-B1-W0201-DS-v01_00-EN.pdf?fileId=5546d4625cc9456a015ce93613b14885
ESD239B1W0201E6327XTSA1
Hersteller: Infineon Technologies
Description: TVS DIODE 22VWM 26.5VC WLL-2-3
Packaging: Cut Tape (CT)
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C
Applications: General Purpose
Capacitance @ Frequency: 3.2pF @ 1GHz
Current - Peak Pulse (10/1000µs): 3A (8/20µs)
Voltage - Reverse Standoff (Typ): 22V
Supplier Device Package: WLL-2-3
Bidirectional Channels: 1
Voltage - Clamping (Max) @ Ipp: 26.5V
Power - Peak Pulse: 80W
Power Line Protection: No
auf Bestellung 44050 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
72+0.25 EUR
102+0.17 EUR
234+0.08 EUR
500+0.07 EUR
1000+0.07 EUR
2000+0.06 EUR
5000+0.06 EUR
Mindestbestellmenge: 72
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IPA180N10N3GXKSA1 IPA180N10N3+G_Rev2.2.pdf?folderId=db3a304313b8b5a60113cee8763b02d7&fileId=db3a30432239cccd0122602bfa617f29
IPA180N10N3GXKSA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 100V 28A TO220-FP
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 28A, 10V
Power Dissipation (Max): 30W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 35µA
Supplier Device Package: PG-TO220-FP
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 50 V
auf Bestellung 400 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
400+1.26 EUR
Mindestbestellmenge: 400
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IR3596MGB04TRP
Hersteller: Infineon Technologies
Description: IC DC/DC MULTIPHASE CTLR
Produkt ist nicht verfügbar
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CY25404ZXI216 Infineon-CY25404_QUAD_PLL_PROGRAMMABLE_CLOCK_GENERATOR_WITH_SPREAD_SPECTRUM-AdditionalTechnicalInformation-v09_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec65e4e3c93&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe
CY25404ZXI216
Hersteller: Infineon Technologies
Description: TSBU
Packaging: Tube
DigiKey Programmable: Not Verified
auf Bestellung 10942 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
77+6.64 EUR
Mindestbestellmenge: 77
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IPW50R199CP INFNS16481-1.pdf?t.download=true&u=5oefqw
IPW50R199CP
Hersteller: Infineon Technologies
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 199mOhm @ 9.9A, 10V
Power Dissipation (Max): 139W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 660µA
Supplier Device Package: PG-TO247-3-21
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 100 V
Produkt ist nicht verfügbar
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BCR602XTSA1 Infineon-BCR602-DS-v01_01-EN.pdf?fileId=5546d46268554f4a016855acb7e80020
BCR602XTSA1
Hersteller: Infineon Technologies
Description: IC LED DRVR LIN PWM 10MA SOT23-6
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Number of Outputs: 1
Type: Linear
Applications: LED Lighting
Current - Output / Channel: 10mA
Internal Switch(s): No
Topology: Linear
Supplier Device Package: PG-SOT23-6
Dimming: Analog, PWM
Voltage - Supply (Max): 60V
Part Status: Active
Produkt ist nicht verfügbar
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BCR602XTSA1 Infineon-BCR602-DS-v01_01-EN.pdf?fileId=5546d46268554f4a016855acb7e80020
BCR602XTSA1
Hersteller: Infineon Technologies
Description: IC LED DRVR LIN PWM 10MA SOT23-6
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Number of Outputs: 1
Type: Linear
Applications: LED Lighting
Current - Output / Channel: 10mA
Internal Switch(s): No
Topology: Linear
Supplier Device Package: PG-SOT23-6
Dimming: Analog, PWM
Voltage - Supply (Max): 60V
Part Status: Active
auf Bestellung 2620 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
18+1.02 EUR
25+0.72 EUR
28+0.64 EUR
100+0.56 EUR
250+0.52 EUR
500+0.50 EUR
1000+0.48 EUR
Mindestbestellmenge: 18
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SLE-5532-M3.2
Hersteller: Infineon Technologies
Description: INFINEON CHIP CARD INTELLIGENT 2
auf Bestellung 7690 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
751+0.71 EUR
Mindestbestellmenge: 751
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BSP89H6327XTSA1 Infineon-BSP89-DS-v02_02-en.pdf?fileId=db3a30433b47825b013b4b8a07f90d55
BSP89H6327XTSA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 240V 350MA SOT223-4
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 350mA (Ta)
Rds On (Max) @ Id, Vgs: 6Ohm @ 350mA, 10V
Power Dissipation (Max): 1.8W (Ta)
Vgs(th) (Max) @ Id: 1.8V @ 108µA
Supplier Device Package: PG-SOT223-4
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 240 V
Gate Charge (Qg) (Max) @ Vgs: 6.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 140 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1000+0.30 EUR
2000+0.29 EUR
Mindestbestellmenge: 1000
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BSP89H6327XTSA1 Infineon-BSP89-DS-v02_02-en.pdf?fileId=db3a30433b47825b013b4b8a07f90d55
BSP89H6327XTSA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 240V 350MA SOT223-4
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 350mA (Ta)
Rds On (Max) @ Id, Vgs: 6Ohm @ 350mA, 10V
Power Dissipation (Max): 1.8W (Ta)
Vgs(th) (Max) @ Id: 1.8V @ 108µA
Supplier Device Package: PG-SOT223-4
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 240 V
Gate Charge (Qg) (Max) @ Vgs: 6.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 140 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 4540 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
24+0.76 EUR
37+0.48 EUR
100+0.38 EUR
500+0.37 EUR
Mindestbestellmenge: 24
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IM240M6Z1BALSA1 IM240-M6xxB.pdf
Hersteller: Infineon Technologies
Description: MODULE IPM 3PHASE SOP23
Packaging: Tube
Package / Case: 23-PowerSMD Module, Gull Wing
Mounting Type: Surface Mount
Type: IGBT
Configuration: 3 Phase Inverter
Voltage - Isolation: 1900Vrms
Current: 4 A
Voltage: 600 V
Produkt ist nicht verfügbar
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IM240S6Z1BALSA1 IM240-S6xxB.pdf
Hersteller: Infineon Technologies
Description: MODULE IPM 3PHASE SOP23
Packaging: Tube
Package / Case: 23-SMD Module
Mounting Type: Surface Mount
Type: IGBT
Configuration: 3 Phase Inverter
Voltage - Isolation: 1900Vrms
Current: 3 A
Voltage: 600 V
Produkt ist nicht verfügbar
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TLE8718SAAUMA4 Infineon-TLE8718SA-DS-v01_01-en.pdf?fileId=db3a304339bdde1f0139c4c4cb7c58df
TLE8718SAAUMA4
Hersteller: Infineon Technologies
Description: IC PWR SWITCH N-CH 1:18 DSO-36
Packaging: Cut Tape (CT)
Package / Case: 36-BSSOP (0.433", 11.00mm Width) Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 18
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Low Side
Voltage - Load: 4.5V ~ 5.5V
Ratio - Input:Output: 1:18
Supplier Device Package: PG-DSO-36-54
Fault Protection: Over Temperature, Short Circuit, UVLO
Grade: Automotive
Part Status: Active
auf Bestellung 1335 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+16.46 EUR
10+12.83 EUR
25+11.92 EUR
100+10.93 EUR
250+10.45 EUR
Mindestbestellmenge: 2
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BTS500251TEAAUMA1 Infineon-BTS50025-1TEA-DS-V01_00-EN-DataSheet-v01_00-EN.pdf?fileId=5546d4626cb27db2016d4322f14b7d2a
BTS500251TEAAUMA1
Hersteller: Infineon Technologies
Description: HIC-PROFET
Packaging: Tape & Reel (TR)
Package / Case: TO-252-5, DPak (4 Leads + Tab), TO-252AD
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 5mOhm
Input Type: Non-Inverting
Voltage - Load: 5.8V ~ 18V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 24A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-TO252-5-11
Fault Protection: Over Temperature, Over Voltage, Reverse Battery, Short Circuit
Part Status: Active
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2500+3.56 EUR
Mindestbestellmenge: 2500
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PSB50501ELV1.3-G
Hersteller: Infineon Technologies
Description: AMAZON-E (DFE) ADSL CHIP
Packaging: Bulk
auf Bestellung 3520 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
31+15.32 EUR
Mindestbestellmenge: 31
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DEMOBRDTLD5095ELV1TOBO1 DEMOBRDTLD5095ELV1TOBO1_Web.pdf
DEMOBRDTLD5095ELV1TOBO1
Hersteller: Infineon Technologies
Description: EVAL BOARD FOR TLD5095EL
Packaging: Box
Voltage - Output: 4.5V ~ 40V
Voltage - Input: 12V ~ 45V
Contents: Board(s)
Utilized IC / Part: TLD5095EL
Supplied Contents: Board(s)
Outputs and Type: 1 Non-Isolated Output
auf Bestellung 3 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+221.80 EUR
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2PS12017E34W32132NOSA1 Infineon-2PS12017E34W32132-DS-v02_01-en_de.pdf?fileId=db3a304332fc1ee7013317532873727f
2PS12017E34W32132NOSA1
Hersteller: Infineon Technologies
Description: MODULE IGBT STACK A-PS4-1
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -25°C ~ 55°C
NTC Thermistor: No
Supplier Device Package: Module
Produkt ist nicht verfügbar
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BFP640E6327 INFNS10679-1.pdf?t.download=true&u=5oefqw
BFP640E6327
Hersteller: Infineon Technologies
Description: RF TRANS NPN 4.5V 40GHZ PGSOT343
Packaging: Bulk
Package / Case: SC-82A, SOT-343
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 24dB
Power - Max: 200mW
Current - Collector (Ic) (Max): 50mA
Voltage - Collector Emitter Breakdown (Max): 4.5V
DC Current Gain (hFE) (Min) @ Ic, Vce: 110 @ 30mA, 3V
Frequency - Transition: 40GHz
Noise Figure (dB Typ @ f): 0.65dB ~ 1.2dB @ 1.8GHz ~ 6GHz
Supplier Device Package: PG-SOT343-4
Part Status: Active
auf Bestellung 26583 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
866+0.57 EUR
Mindestbestellmenge: 866
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