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BCR198TE6327 BCR198TE6327 Infineon Technologies INFNS09785-1.pdf?t.download=true&u=5oefqw Description: TRANS PREBIAS PNP 50V SOT23-3
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V
Supplier Device Package: PG-SOT23-3-3
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 190 MHz
Resistor - Base (R1): 47 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Grade: Automotive
Qualification: AEC-Q101
Resistors Included: R1 and R2
auf Bestellung 27000 Stücke:
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10764+0.045 EUR
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BCR198WH6327 BCR198WH6327 Infineon Technologies Infineon-BCR198SERIES-DS-v01_01-en[1].pdf?fileId=db3a304320d39d590121e8552c2f65bb Description: BIPOLAR DIGITAL TRANSISTOR
Packaging: Bulk
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V
Supplier Device Package: PG-SOT323-3-1
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 250 mW
Frequency - Transition: 190 MHz
Resistor - Base (R1): 47 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Produkt ist nicht verfügbar
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AUIR3316S-INF AUIR3316S-INF Infineon Technologies IRSDS11219-1.pdf?t.download=true&u=5oefqw Description: LATCH BASED PERIPHERAL DRIVER, 1
Packaging: Bulk
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 5.5mOhm
Input Type: Non-Inverting
Voltage - Load: 6V ~ 26V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 23A
Ratio - Input:Output: 1:1
Supplier Device Package: D2PAK
Fault Protection: Current Limiting (Adjustable), Over Temperature, Reverse Battery
Produkt ist nicht verfügbar
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BGSA133GN10E6327XTSA1 BGSA133GN10E6327XTSA1 Infineon Technologies Description: IC RF ANT DEVICE 10TSNP
Packaging: Bulk
Package / Case: 10-XFQFN
Mounting Type: Surface Mount
Function: Switch
Supplier Device Package: PG-TSNP-10-1
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BGSA11GN10E6327XTSA1 BGSA11GN10E6327XTSA1 Infineon Technologies Infineon-BGSA11GN10-DataSheet-v03_02-EN.pdf?fileId=5546d46255dd933d0155e9dac4e809ed Description: IC RF SWITCH SPST 5GHZ TSNP10-1
Packaging: Cut Tape (CT)
Package / Case: 10-XFQFN
Impedance: 50Ohm
Mounting Type: Surface Mount
Circuit: SPST
RF Type: General Purpose
Operating Temperature: -30°C ~ 85°C
Voltage - Supply: 1.8V ~ 3.6V
Insertion Loss: 0.35dB
Frequency Range: 100MHz ~ 5GHz
Test Frequency: 2.69GHz
Isolation: 14dB
Supplier Device Package: PG-TSNP-10-1
IIP3: 75dBm
Part Status: Active
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16+1.14 EUR
18+1 EUR
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100+0.77 EUR
250+0.71 EUR
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CY7C1041GN-10ZSXI CY7C1041GN-10ZSXI Infineon Technologies Infineon-CY7C1041GN_4-Mbit_(256K_words_16_bit)_Static_RAM-DataSheet-v05_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed82ae859a5&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Description: IC SRAM 4MBIT PARALLEL 44TSOP II
Packaging: Tray
Package / Case: 44-TSOP (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 4Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 44-TSOP II
Write Cycle Time - Word, Page: 10ns
Memory Interface: Parallel
Access Time: 10 ns
Memory Organization: 256K x 16
DigiKey Programmable: Not Verified
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2+12.95 EUR
10+11.49 EUR
25+10.96 EUR
40+10.7 EUR
135+10.04 EUR
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BGSA14GN10E6327XTSA1 BGSA14GN10E6327XTSA1 Infineon Technologies Infineon-BGSA14GN10-DataSheet-v03_01-EN.pdf?fileId=5546d46255dd933d0155e9e3e86f09ff Description: IC RF SWITCH SP4T 5GHZ TSNP10-1
Packaging: Tape & Reel (TR)
Features: Single Line Control
Package / Case: 10-XFQFN
Impedance: 50Ohm
Mounting Type: Surface Mount
Circuit: SP4T
RF Type: Cellular, 3G, 4G
Operating Temperature: -30°C ~ 85°C
Voltage - Supply: 1.8V ~ 3.6V
Insertion Loss: 0.46dB
Frequency Range: 100MHz ~ 5GHz
Test Frequency: 2.69GHz
Isolation: 20dB
Supplier Device Package: PG-TSNP-10-1
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BGSA14GN10E6327XTSA1 BGSA14GN10E6327XTSA1 Infineon Technologies Infineon-BGSA14GN10-DataSheet-v03_01-EN.pdf?fileId=5546d46255dd933d0155e9e3e86f09ff Description: IC RF SWITCH SP4T 5GHZ TSNP10-1
Packaging: Cut Tape (CT)
Features: Single Line Control
Package / Case: 10-XFQFN
Impedance: 50Ohm
Mounting Type: Surface Mount
Circuit: SP4T
RF Type: Cellular, 3G, 4G
Operating Temperature: -30°C ~ 85°C
Voltage - Supply: 1.8V ~ 3.6V
Insertion Loss: 0.46dB
Frequency Range: 100MHz ~ 5GHz
Test Frequency: 2.69GHz
Isolation: 20dB
Supplier Device Package: PG-TSNP-10-1
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17+1.04 EUR
24+0.73 EUR
27+0.66 EUR
100+0.58 EUR
250+0.54 EUR
500+0.51 EUR
1000+0.49 EUR
2500+0.47 EUR
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BGSA133GN10E6327XTSA1 BGSA133GN10E6327XTSA1 Infineon Technologies Description: IC RF ANT DEVICE 10TSNP
Packaging: Tape & Reel (TR)
Package / Case: 10-XFQFN
Mounting Type: Surface Mount
Function: Switch
Supplier Device Package: PG-TSNP-10-1
Produkt ist nicht verfügbar
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CY7C1041GN-10VXI CY7C1041GN-10VXI Infineon Technologies Infineon-CY7C1041GN_4-Mbit_(256K_words_16_bit)_Static_RAM-DataSheet-v05_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed82ae859a5&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Description: IC SRAM 4MBIT PARALLEL 44SOJ
Packaging: Tube
Package / Case: 44-BSOJ (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 4Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 44-SOJ
Write Cycle Time - Word, Page: 10ns
Memory Interface: Parallel
Access Time: 10 ns
Memory Organization: 256K x 16
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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BSD235N L6327 BSD235N L6327 Infineon Technologies BSD235N_Rev2.1.pdf?folderId=db3a3043156fd573011622e10b5c1f67&fileId=db3a30431add1d95011afc70075c04e0 Description: MOSFET 2N-CH 20V 0.95A SOT363
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BSD235N L6327 BSD235N L6327 Infineon Technologies BSD235N_Rev2.1.pdf?folderId=db3a3043156fd573011622e10b5c1f67&fileId=db3a30431add1d95011afc70075c04e0 Description: MOSFET 2N-CH 20V 0.95A SOT363
Produkt ist nicht verfügbar
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BSC025N03LSGATMA1 BSC025N03LSGATMA1 Infineon Technologies BSC025N03LS_rev1.6.pdf?fileId=db3a304412b407950112b4274ff53bff Description: MOSFET N-CH 30V 25A/100A TDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 2.5mOhm @ 30A, 10V
Power Dissipation (Max): 2.5W (Ta), 83W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: PG-TDSON-8-5
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6100 pF @ 15 V
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5000+0.89 EUR
10000+0.85 EUR
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BSC025N03LSGATMA1 BSC025N03LSGATMA1 Infineon Technologies BSC025N03LS_rev1.6.pdf?fileId=db3a304412b407950112b4274ff53bff Description: MOSFET N-CH 30V 25A/100A TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 2.5mOhm @ 30A, 10V
Power Dissipation (Max): 2.5W (Ta), 83W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: PG-TDSON-8-5
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6100 pF @ 15 V
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8+2.25 EUR
10+1.84 EUR
100+1.43 EUR
500+1.22 EUR
1000+0.99 EUR
2000+0.93 EUR
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BCM89071A1CUBXGT BCM89071A1CUBXGT Infineon Technologies Infineon-CYW89071_Single_Chip_Automotive_Grade_Bluetooth_Transceiver_and_Baseband_Processor-DataSheet-v09_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee1ff4c6835&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_a Description: IC RF TXRX+MCU BLUETOOTH 42UFBGA
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SPP07N600S5 SPP07N600S5 Infineon Technologies Infineon-SPP_I07N60S5-DS-v02_07-en.pdf?fileId=db3a304412b407950112b42c81144713 Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Part Status: Active
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IPB60R299CPAATMA1 IPB60R299CPAATMA1 Infineon Technologies INFN-S-A0003614947-1.pdf?t.download=true&u=5oefqw Description: MOSFET N-CH 600V 11A TO263-3
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 299mOhm @ 6.6A, 10V
Power Dissipation (Max): 96W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 440µA
Supplier Device Package: PG-TO263-3-2
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 100 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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IPB100N04S2L-03ATMA2 IPB100N04S2L-03ATMA2 Infineon Technologies INFNS08598-1.pdf?t.download=true&u=5oefqw Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 3.3mOhm @ 80A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TO263-3-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 230 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6000 pF @ 25 V
auf Bestellung 17740 Stücke:
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144+3.68 EUR
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IPB100N04S2L03ATMA2 IPB100N04S2L03ATMA2 Infineon Technologies Infineon-IPP_B100N04S2L-DS-v01_00-en.pdf?fileId=db3a304412b407950112b42b9443455d&ack=t Description: MOSFET N-CH 40V 100A TO263-3
Packaging: Bulk
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 3mOhm @ 80A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TO263-3-2
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 230 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6000 pF @ 25 V
Qualification: AEC-Q101
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144+3.23 EUR
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IPB100N04S204ATMA4 IPB100N04S204ATMA4 Infineon Technologies IPx100N04S2-04.pdf Description: MOSFET N-CH 40V 100A TO263-3
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 3.3mOhm @ 80A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PG-TO263-3-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 172 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5300 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
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IKCM20L60GBXKMA1 IKCM20L60GBXKMA1 Infineon Technologies INFN-S-A0003820769-1.pdf?t.download=true&u=5oefqw Description: INTELLIGENT POWER MODULE (IPM)
Packaging: Bulk
Mounting Type: Through Hole
Type: IGBT
Configuration: 3 Phase
Part Status: Active
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IKCM15H60HAXXMA1 IKCM15H60HAXXMA1 Infineon Technologies Description: INTELLIGENT POWER MODULE (IPM)
Packaging: Bulk
Package / Case: 24-PowerDIP Module
Mounting Type: Through Hole
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 15A
Operating Temperature: -40°C ~ 125°C
Output Configuration: Half Bridge (3)
Voltage - Supply: 13.5V ~ 18.5V
Applications: Fan Motor Driver
Technology: IGBT
Supplier Device Package: 24-DIP
Motor Type - Stepper: Multiphase
Motor Type - AC, DC: AC, Synchronous
Part Status: Active
Produkt ist nicht verfügbar
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IKCM10H60HAXKMA1 IKCM10H60HAXKMA1 Infineon Technologies IKCM10H60HA.pdf Description: IFPS MODULES 24MDIP
Packaging: Bulk
Package / Case: 24-PowerDIP Module (1.028", 26.10mm)
Mounting Type: Through Hole
Type: IGBT
Configuration: 3 Phase
Voltage - Isolation: 2000Vrms
Part Status: Obsolete
Current: 10 A
Voltage: 600 V
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IKCM20L60HAXKMA1 IKCM20L60HAXKMA1 Infineon Technologies IKCM20L60HA.pdf Description: IFPS MODULES 24MDIP
Packaging: Bulk
Package / Case: 24-PowerDIP Module (1.028", 26.10mm)
Mounting Type: Through Hole
Type: IGBT
Configuration: 3 Phase
Voltage - Isolation: 2000Vrms
Part Status: Obsolete
Current: 20 A
Voltage: 600 V
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IKCM20L60HDXKMA1 IKCM20L60HDXKMA1 Infineon Technologies IKCM20L60HD.pdf Description: IFPS MODULES 24MDIP
Packaging: Bulk
Package / Case: 24-PowerDIP Module (1.028", 26.10mm)
Mounting Type: Through Hole
Type: IGBT
Configuration: 3 Phase
Voltage - Isolation: 2000Vrms
Part Status: Obsolete
Current: 20 A
Voltage: 600 V
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IRFS4510TRLPBF IRFS4510TRLPBF Infineon Technologies IRSDS13318-1.pdf?t.download=true&u=5oefqw Description: MOSFET N-CH 100V 61A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 61A (Tc)
Rds On (Max) @ Id, Vgs: 13.9mOhm @ 37A, 10V
Power Dissipation (Max): 140W (Tc)
Vgs(th) (Max) @ Id: 4V @ 100µA
Supplier Device Package: PG-TO263-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 87 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3180 pF @ 50 V
auf Bestellung 1600 Stücke:
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800+1.48 EUR
1600+1.37 EUR
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IRFS4510TRLPBF IRFS4510TRLPBF Infineon Technologies IRSDS13318-1.pdf?t.download=true&u=5oefqw Description: MOSFET N-CH 100V 61A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 61A (Tc)
Rds On (Max) @ Id, Vgs: 13.9mOhm @ 37A, 10V
Power Dissipation (Max): 140W (Tc)
Vgs(th) (Max) @ Id: 4V @ 100µA
Supplier Device Package: PG-TO263-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 87 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3180 pF @ 50 V
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BTT62001EJA BTT62001EJA Infineon Technologies INFN-S-A0000037746-1.pdf?t.download=true&u=5oefqw Description: SMART HIGH-SIDE POWER SWITCH
Packaging: Bulk
Features: Slew Rate Controlled
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 200mOhm
Input Type: Non-Inverting
Voltage - Load: 5V ~ 36V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 1.5A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-DSO-8-44
Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, Over Voltage, UVLO
Part Status: Active
Produkt ist nicht verfügbar
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BTT62004ESAXUMA1 BTT62004ESAXUMA1 Infineon Technologies Infineon-BTT6200-4ESA-DS-v01_00-EN.pdf?fileId=5546d46269e1c019016a22035b660d8d Description: IC PWR SWTCH N-CHAN 1:1 TSDSO-24
Packaging: Cut Tape (CT)
Package / Case: 24-TSSOP (0.154", 3.90mm Width) Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 4
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 200mOhm
Input Type: Non-Inverting
Voltage - Load: 5V ~ 36V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 1A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-TSDSO-24-21
Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, Over Voltage
Part Status: Active
Grade: Automotive
Qualification: AEC-Q100
auf Bestellung 8518 Stücke:
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3+6.14 EUR
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BTT62001ENAXUMA1 BTT62001ENAXUMA1 Infineon Technologies Infineon-BTT6200-1ENA-DS-v01_00-EN.pdf?fileId=5546d462636cc8fb01645f3a31f312e9 Description: IC PWR SWITCH N-CHAN 1:1 TDSO-8
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 200mOhm
Input Type: Non-Inverting
Voltage - Load: 8V ~ 36V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 1.5A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-TDSO-8-31
Fault Protection: Over Temperature, Over Voltage, Short Circuit
Grade: Automotive
Qualification: AEC-Q100
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ESD239B1W0201E6327XTSA1 ESD239B1W0201E6327XTSA1 Infineon Technologies Infineon-ESD239-B1-W0201-DS-v01_00-EN.pdf?fileId=5546d4625cc9456a015ce93613b14885 Description: TVS DIODE 22VWM 26.5VC WLL-2-3
Packaging: Tape & Reel (TR)
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C
Applications: General Purpose
Capacitance @ Frequency: 3.2pF @ 1GHz
Current - Peak Pulse (10/1000µs): 3A (8/20µs)
Voltage - Reverse Standoff (Typ): 22V
Supplier Device Package: WLL-2-3
Bidirectional Channels: 1
Voltage - Clamping (Max) @ Ipp: 26.5V
Power - Peak Pulse: 80W
Power Line Protection: No
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ESD239B1W0201E6327XTSA1 ESD239B1W0201E6327XTSA1 Infineon Technologies Infineon-ESD239-B1-W0201-DS-v01_00-EN.pdf?fileId=5546d4625cc9456a015ce93613b14885 Description: TVS DIODE 22VWM 26.5VC WLL-2-3
Packaging: Cut Tape (CT)
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C
Applications: General Purpose
Capacitance @ Frequency: 3.2pF @ 1GHz
Current - Peak Pulse (10/1000µs): 3A (8/20µs)
Voltage - Reverse Standoff (Typ): 22V
Supplier Device Package: WLL-2-3
Bidirectional Channels: 1
Voltage - Clamping (Max) @ Ipp: 26.5V
Power - Peak Pulse: 80W
Power Line Protection: No
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500+0.07 EUR
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IPA180N10N3GXKSA1 IPA180N10N3GXKSA1 Infineon Technologies IPA180N10N3+G_Rev2.2.pdf?folderId=db3a304313b8b5a60113cee8763b02d7&fileId=db3a30432239cccd0122602bfa617f29 Description: MOSFET N-CH 100V 28A TO220-FP
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 28A, 10V
Power Dissipation (Max): 30W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 35µA
Supplier Device Package: PG-TO220-FP
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 50 V
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IR3596MGB04TRP Infineon Technologies Description: IC DC/DC MULTIPHASE CTLR
Produkt ist nicht verfügbar
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CY25404ZXI216 CY25404ZXI216 Infineon Technologies Infineon-CY25404_QUAD_PLL_PROGRAMMABLE_CLOCK_GENERATOR_WITH_SPREAD_SPECTRUM-AdditionalTechnicalInformation-v09_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec65e4e3c93&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe Description: TSBU
Packaging: Tube
DigiKey Programmable: Not Verified
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IPW50R199CP IPW50R199CP Infineon Technologies INFNS16481-1.pdf?t.download=true&u=5oefqw Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 199mOhm @ 9.9A, 10V
Power Dissipation (Max): 139W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 660µA
Supplier Device Package: PG-TO247-3-21
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 100 V
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BCR602XTSA1 BCR602XTSA1 Infineon Technologies Infineon-BCR602-DS-v01_01-EN.pdf?fileId=5546d46268554f4a016855acb7e80020 Description: IC LED DRVR LIN PWM 10MA SOT23-6
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Number of Outputs: 1
Type: Linear
Applications: LED Lighting
Current - Output / Channel: 10mA
Internal Switch(s): No
Topology: Linear
Supplier Device Package: PG-SOT23-6
Dimming: Analog, PWM
Voltage - Supply (Max): 60V
Part Status: Active
Produkt ist nicht verfügbar
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BCR602XTSA1 BCR602XTSA1 Infineon Technologies Infineon-BCR602-DS-v01_01-EN.pdf?fileId=5546d46268554f4a016855acb7e80020 Description: IC LED DRVR LIN PWM 10MA SOT23-6
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Number of Outputs: 1
Type: Linear
Applications: LED Lighting
Current - Output / Channel: 10mA
Internal Switch(s): No
Topology: Linear
Supplier Device Package: PG-SOT23-6
Dimming: Analog, PWM
Voltage - Supply (Max): 60V
Part Status: Active
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250+0.52 EUR
500+0.5 EUR
1000+0.48 EUR
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SLE-5532-M3.2 Infineon Technologies Description: INFINEON CHIP CARD INTELLIGENT 2
auf Bestellung 7690 Stücke:
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BSP89H6327XTSA1 BSP89H6327XTSA1 Infineon Technologies Infineon-BSP89-DS-v02_02-en.pdf?fileId=db3a30433b47825b013b4b8a07f90d55 Description: MOSFET N-CH 240V 350MA SOT223-4
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 350mA (Ta)
Rds On (Max) @ Id, Vgs: 6Ohm @ 350mA, 10V
Power Dissipation (Max): 1.8W (Ta)
Vgs(th) (Max) @ Id: 1.8V @ 108µA
Supplier Device Package: PG-SOT223-4
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 240 V
Gate Charge (Qg) (Max) @ Vgs: 6.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 140 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 3000 Stücke:
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1000+0.3 EUR
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BSP89H6327XTSA1 BSP89H6327XTSA1 Infineon Technologies Infineon-BSP89-DS-v02_02-en.pdf?fileId=db3a30433b47825b013b4b8a07f90d55 Description: MOSFET N-CH 240V 350MA SOT223-4
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 350mA (Ta)
Rds On (Max) @ Id, Vgs: 6Ohm @ 350mA, 10V
Power Dissipation (Max): 1.8W (Ta)
Vgs(th) (Max) @ Id: 1.8V @ 108µA
Supplier Device Package: PG-SOT223-4
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 240 V
Gate Charge (Qg) (Max) @ Vgs: 6.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 140 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
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IM240M6Z1BALSA1 Infineon Technologies IM240-M6xxB.pdf Description: MODULE IPM 3PHASE SOP23
Packaging: Tube
Package / Case: 23-PowerSMD Module, Gull Wing
Mounting Type: Surface Mount
Type: IGBT
Configuration: 3 Phase Inverter
Voltage - Isolation: 1900Vrms
Current: 4 A
Voltage: 600 V
Produkt ist nicht verfügbar
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IM240S6Z1BALSA1 Infineon Technologies IM240-S6xxB.pdf Description: MODULE IPM 3PHASE SOP23
Packaging: Tube
Package / Case: 23-SMD Module
Mounting Type: Surface Mount
Type: IGBT
Configuration: 3 Phase Inverter
Voltage - Isolation: 1900Vrms
Current: 3 A
Voltage: 600 V
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TLE8718SAAUMA4 TLE8718SAAUMA4 Infineon Technologies Infineon-TLE8718SA-DS-v01_01-en.pdf?fileId=db3a304339bdde1f0139c4c4cb7c58df Description: IC PWR SWITCH N-CH 1:18 DSO-36
Packaging: Cut Tape (CT)
Package / Case: 36-BSSOP (0.433", 11.00mm Width) Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 18
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Low Side
Voltage - Load: 4.5V ~ 5.5V
Ratio - Input:Output: 1:18
Supplier Device Package: PG-DSO-36-54
Fault Protection: Over Temperature, Short Circuit, UVLO
Part Status: Active
Grade: Automotive
auf Bestellung 1335 Stücke:
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2+16.46 EUR
10+12.83 EUR
25+11.92 EUR
100+10.93 EUR
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BTS500251TEAAUMA1 BTS500251TEAAUMA1 Infineon Technologies Infineon-BTS50025-1TEA-DS-V01_00-EN-DataSheet-v01_00-EN.pdf?fileId=5546d4626cb27db2016d4322f14b7d2a Description: HIC-PROFET
Packaging: Tape & Reel (TR)
Package / Case: TO-252-5, DPak (4 Leads + Tab), TO-252AD
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 5mOhm
Input Type: Non-Inverting
Voltage - Load: 5.8V ~ 18V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 24A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-TO252-5-11
Fault Protection: Over Temperature, Over Voltage, Reverse Battery, Short Circuit
Part Status: Active
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2500+3.44 EUR
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PSB50501ELV1.3-G Infineon Technologies Description: AMAZON-E (DFE) ADSL CHIP
Packaging: Bulk
auf Bestellung 3520 Stücke:
Lieferzeit 10-14 Tag (e)
25+17.96 EUR
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DEMOBRDTLD5095ELV1TOBO1 DEMOBRDTLD5095ELV1TOBO1 Infineon Technologies DEMOBRDTLD5095ELV1TOBO1_Web.pdf Description: EVAL BOARD FOR TLD5095EL
Packaging: Box
Voltage - Output: 4.5V ~ 40V
Voltage - Input: 12V ~ 45V
Utilized IC / Part: TLD5095EL
Supplied Contents: Board(s)
Outputs and Type: 1 Non-Isolated Output
Contents: Board(s)
auf Bestellung 3 Stücke:
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2PS12017E34W32132NOSA1 2PS12017E34W32132NOSA1 Infineon Technologies Infineon-2PS12017E34W32132-DS-v02_01-en_de.pdf?fileId=db3a304332fc1ee7013317532873727f Description: MODULE IGBT STACK A-PS4-1
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -25°C ~ 55°C
NTC Thermistor: No
Supplier Device Package: Module
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BFP640E6327 BFP640E6327 Infineon Technologies INFNS10679-1.pdf?t.download=true&u=5oefqw Description: RF TRANS NPN 4.5V 40GHZ PGSOT343
Packaging: Bulk
Package / Case: SC-82A, SOT-343
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 24dB
Power - Max: 200mW
Current - Collector (Ic) (Max): 50mA
Voltage - Collector Emitter Breakdown (Max): 4.5V
DC Current Gain (hFE) (Min) @ Ic, Vce: 110 @ 30mA, 3V
Frequency - Transition: 40GHz
Noise Figure (dB Typ @ f): 0.65dB ~ 1.2dB @ 1.8GHz ~ 6GHz
Supplier Device Package: PG-SOT343-4
Part Status: Active
auf Bestellung 26583 Stücke:
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BFP640FESDH6327XTSA1 BFP640FESDH6327XTSA1 Infineon Technologies Infineon-BFP540ESD-DS-v02_00-EN.pdf?fileId=5546d462689a790c01690f0382ea3920 Description: RF TRANS NPN 4.7V 46GHZ 4-TSFP
Packaging: Cut Tape (CT)
Package / Case: 4-SMD, Flat Leads
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 8B ~ 30.5dB
Power - Max: 200mW
Current - Collector (Ic) (Max): 50mA
Voltage - Collector Emitter Breakdown (Max): 4.7V
DC Current Gain (hFE) (Min) @ Ic, Vce: 110 @ 30mA, 3V
Frequency - Transition: 46GHz
Noise Figure (dB Typ @ f): 0.55dB ~ 1.7dB @ 150MHz ~ 10GHz
Supplier Device Package: 4-TSFP
Part Status: Active
auf Bestellung 667 Stücke:
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24+0.76 EUR
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100+0.42 EUR
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BFP620E7764 BFP620E7764 Infineon Technologies INFNS10686-1.pdf?t.download=true&u=5oefqw Description: RF BIPOLAR TRANSISTOR
Packaging: Bulk
Package / Case: SC-82A, SOT-343
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 21.5dB
Power - Max: 185mW
Current - Collector (Ic) (Max): 80mA
Voltage - Collector Emitter Breakdown (Max): 2.8V
DC Current Gain (hFE) (Min) @ Ic, Vce: 110 @ 50mA, 1.5V
Frequency - Transition: 65GHz
Noise Figure (dB Typ @ f): 0.7dB ~ 1.3dB @ 1.8GHz ~ 6GHz
Supplier Device Package: PG-SOT343-4
Part Status: Active
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IRF5210STRRPBF IRF5210STRRPBF Infineon Technologies irf5210spbf.pdf?fileId=5546d462533600a4015355e35f77198e Description: MOSFET P-CH 100V 38A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 38A (Tc)
Rds On (Max) @ Id, Vgs: 60mOhm @ 38A, 10V
Power Dissipation (Max): 3.1W (Ta), 170W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 230 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2780 pF @ 25 V
Produkt ist nicht verfügbar
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SPP11N65C3HKSA1 Infineon Technologies SP%28P%2CA%2CI%2911N65C3.pdf Description: MOSFET N-CH 650V 11A TO-220
Packaging: Tube
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Part Status: Active
Produkt ist nicht verfügbar
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PBL3766/1NS Infineon Technologies ERICS00253-1.pdf?t.download=true&u=5oefqw Description: BIPOLAR SLIC
Packaging: Bulk
Package / Case: 22-DIP
Mounting Type: Through Hole
Function: Subscriber Line Interface Concept (SLIC)
Interface: 2-Wire
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: -24V ~ -58V
Supplier Device Package: 22-DIP
Part Status: Active
Number of Circuits: 1
auf Bestellung 10200 Stücke:
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54+9.93 EUR
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IRFHM3911TRPBF IRFHM3911TRPBF Infineon Technologies irfhm3911pbf.pdf?fileId=5546d462533600a40153561ff23f1f2b Description: MOSFET N-CH 100V 3.2A/20A 8PQFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.2A (Ta), 20A (Tc)
Rds On (Max) @ Id, Vgs: 115mOhm @ 6.3A, 10V
Power Dissipation (Max): 2.8W (Ta), 29W (Tc)
Vgs(th) (Max) @ Id: 4V @ 35µA
Supplier Device Package: 8-PQFN (3x3)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 760 pF @ 50 V
auf Bestellung 4000 Stücke:
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4000+0.37 EUR
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IRFHM3911TRPBF IRFHM3911TRPBF Infineon Technologies irfhm3911pbf.pdf?fileId=5546d462533600a40153561ff23f1f2b Description: MOSFET N-CH 100V 3.2A/20A 8PQFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.2A (Ta), 20A (Tc)
Rds On (Max) @ Id, Vgs: 115mOhm @ 6.3A, 10V
Power Dissipation (Max): 2.8W (Ta), 29W (Tc)
Vgs(th) (Max) @ Id: 4V @ 35µA
Supplier Device Package: 8-PQFN (3x3)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 760 pF @ 50 V
auf Bestellung 4676 Stücke:
Lieferzeit 10-14 Tag (e)
12+1.57 EUR
18+1 EUR
100+0.68 EUR
500+0.54 EUR
1000+0.49 EUR
2000+0.45 EUR
Mindestbestellmenge: 12
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ICE3B0365JG Infineon Technologies INFN-S-A0003615022-1.pdf?t.download=true&u=5oefqw Description: IC OFFLINE SWITCH FLYBACK 12DSO
Packaging: Bulk
Package / Case: 12-BSOP (0.295", 7.50mm Width) Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -25°C ~ 130°C (TJ)
Duty Cycle: 75%
Frequency - Switching: 67kHz
Internal Switch(s): Yes
Voltage - Breakdown: 650V
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 10.3V ~ 26V
Supplier Device Package: PG-DSO-12
Fault Protection: Current Limiting, Open Loop, Over Load, Over Temperature, Over Voltage
Control Features: Soft Start
Part Status: Active
auf Bestellung 2979 Stücke:
Lieferzeit 10-14 Tag (e)
373+1.21 EUR
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ICE3B0365J-T Infineon Technologies INFNS27652-1.pdf?t.download=true&u=5oefqw Description: OFF-LINE SMPS CURRENT MODE CONTR
Packaging: Bulk
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Duty Cycle: 75%
Frequency - Switching: 67kHz
Internal Switch(s): Yes
Voltage - Breakdown: 650V
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 10.3V ~ 26V
Supplier Device Package: PG-DIP-8
Fault Protection: Current Limiting, Over Load, Over Temperature, Over Voltage
Voltage - Start Up: 18 V
Control Features: Soft Start
Part Status: Active
Power (Watts): 22 W
auf Bestellung 7234 Stücke:
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346+1.31 EUR
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ESD5V3U4RRSH6327XTSA1 ESD5V3U4RRSH6327XTSA1 Infineon Technologies esd5v3u4rrs.pdf?folderId=db3a30431441fb5d011488a9e66f0ded&fileId=db3a30431c69a49d011cad6ae0c10a10 Description: TVS DIODE 5.3VWM 15VC PGSOT363PO
Packaging: Tape & Reel (TR)
Package / Case: 6-VSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Type: Steering (Rail to Rail)
Operating Temperature: -55°C ~ 125°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 0.4pF @ 1MHz
Current - Peak Pulse (10/1000µs): 3A (8/20µs)
Voltage - Reverse Standoff (Typ): 5.3V (Max)
Supplier Device Package: PG-SOT363-PO
Unidirectional Channels: 4
Voltage - Breakdown (Min): 6.3V
Voltage - Clamping (Max) @ Ipp: 15V
Power - Peak Pulse: 50W
Power Line Protection: Yes
Produkt ist nicht verfügbar
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PTFA092201F V1 PTFA092201F V1 Infineon Technologies PTFA092201(E,F).pdf Description: IC FET RF LDMOS 220W H-37260-2
Produkt ist nicht verfügbar
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BCR198TE6327 INFNS09785-1.pdf?t.download=true&u=5oefqw
BCR198TE6327
Hersteller: Infineon Technologies
Description: TRANS PREBIAS PNP 50V SOT23-3
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V
Supplier Device Package: PG-SOT23-3-3
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 190 MHz
Resistor - Base (R1): 47 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Grade: Automotive
Qualification: AEC-Q101
Resistors Included: R1 and R2
auf Bestellung 27000 Stücke:
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Anzahl Preis
10764+0.045 EUR
Mindestbestellmenge: 10764
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BCR198WH6327 Infineon-BCR198SERIES-DS-v01_01-en[1].pdf?fileId=db3a304320d39d590121e8552c2f65bb
BCR198WH6327
Hersteller: Infineon Technologies
Description: BIPOLAR DIGITAL TRANSISTOR
Packaging: Bulk
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V
Supplier Device Package: PG-SOT323-3-1
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 250 mW
Frequency - Transition: 190 MHz
Resistor - Base (R1): 47 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Produkt ist nicht verfügbar
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AUIR3316S-INF IRSDS11219-1.pdf?t.download=true&u=5oefqw
AUIR3316S-INF
Hersteller: Infineon Technologies
Description: LATCH BASED PERIPHERAL DRIVER, 1
Packaging: Bulk
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 5.5mOhm
Input Type: Non-Inverting
Voltage - Load: 6V ~ 26V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 23A
Ratio - Input:Output: 1:1
Supplier Device Package: D2PAK
Fault Protection: Current Limiting (Adjustable), Over Temperature, Reverse Battery
Produkt ist nicht verfügbar
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BGSA133GN10E6327XTSA1
BGSA133GN10E6327XTSA1
Hersteller: Infineon Technologies
Description: IC RF ANT DEVICE 10TSNP
Packaging: Bulk
Package / Case: 10-XFQFN
Mounting Type: Surface Mount
Function: Switch
Supplier Device Package: PG-TSNP-10-1
auf Bestellung 255000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1024+0.47 EUR
Mindestbestellmenge: 1024
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BGSA11GN10E6327XTSA1 Infineon-BGSA11GN10-DataSheet-v03_02-EN.pdf?fileId=5546d46255dd933d0155e9dac4e809ed
BGSA11GN10E6327XTSA1
Hersteller: Infineon Technologies
Description: IC RF SWITCH SPST 5GHZ TSNP10-1
Packaging: Cut Tape (CT)
Package / Case: 10-XFQFN
Impedance: 50Ohm
Mounting Type: Surface Mount
Circuit: SPST
RF Type: General Purpose
Operating Temperature: -30°C ~ 85°C
Voltage - Supply: 1.8V ~ 3.6V
Insertion Loss: 0.35dB
Frequency Range: 100MHz ~ 5GHz
Test Frequency: 2.69GHz
Isolation: 14dB
Supplier Device Package: PG-TSNP-10-1
IIP3: 75dBm
Part Status: Active
auf Bestellung 1064 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
16+1.14 EUR
18+1 EUR
25+0.94 EUR
100+0.77 EUR
250+0.71 EUR
500+0.61 EUR
1000+0.49 EUR
Mindestbestellmenge: 16
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CY7C1041GN-10ZSXI Infineon-CY7C1041GN_4-Mbit_(256K_words_16_bit)_Static_RAM-DataSheet-v05_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed82ae859a5&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
CY7C1041GN-10ZSXI
Hersteller: Infineon Technologies
Description: IC SRAM 4MBIT PARALLEL 44TSOP II
Packaging: Tray
Package / Case: 44-TSOP (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 4Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 44-TSOP II
Write Cycle Time - Word, Page: 10ns
Memory Interface: Parallel
Access Time: 10 ns
Memory Organization: 256K x 16
DigiKey Programmable: Not Verified
auf Bestellung 509 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+12.95 EUR
10+11.49 EUR
25+10.96 EUR
40+10.7 EUR
135+10.04 EUR
270+9.69 EUR
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BGSA14GN10E6327XTSA1 Infineon-BGSA14GN10-DataSheet-v03_01-EN.pdf?fileId=5546d46255dd933d0155e9e3e86f09ff
BGSA14GN10E6327XTSA1
Hersteller: Infineon Technologies
Description: IC RF SWITCH SP4T 5GHZ TSNP10-1
Packaging: Tape & Reel (TR)
Features: Single Line Control
Package / Case: 10-XFQFN
Impedance: 50Ohm
Mounting Type: Surface Mount
Circuit: SP4T
RF Type: Cellular, 3G, 4G
Operating Temperature: -30°C ~ 85°C
Voltage - Supply: 1.8V ~ 3.6V
Insertion Loss: 0.46dB
Frequency Range: 100MHz ~ 5GHz
Test Frequency: 2.69GHz
Isolation: 20dB
Supplier Device Package: PG-TSNP-10-1
auf Bestellung 7500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
7500+0.45 EUR
Mindestbestellmenge: 7500
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BGSA14GN10E6327XTSA1 Infineon-BGSA14GN10-DataSheet-v03_01-EN.pdf?fileId=5546d46255dd933d0155e9e3e86f09ff
BGSA14GN10E6327XTSA1
Hersteller: Infineon Technologies
Description: IC RF SWITCH SP4T 5GHZ TSNP10-1
Packaging: Cut Tape (CT)
Features: Single Line Control
Package / Case: 10-XFQFN
Impedance: 50Ohm
Mounting Type: Surface Mount
Circuit: SP4T
RF Type: Cellular, 3G, 4G
Operating Temperature: -30°C ~ 85°C
Voltage - Supply: 1.8V ~ 3.6V
Insertion Loss: 0.46dB
Frequency Range: 100MHz ~ 5GHz
Test Frequency: 2.69GHz
Isolation: 20dB
Supplier Device Package: PG-TSNP-10-1
auf Bestellung 9937 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
17+1.04 EUR
24+0.73 EUR
27+0.66 EUR
100+0.58 EUR
250+0.54 EUR
500+0.51 EUR
1000+0.49 EUR
2500+0.47 EUR
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BGSA133GN10E6327XTSA1
BGSA133GN10E6327XTSA1
Hersteller: Infineon Technologies
Description: IC RF ANT DEVICE 10TSNP
Packaging: Tape & Reel (TR)
Package / Case: 10-XFQFN
Mounting Type: Surface Mount
Function: Switch
Supplier Device Package: PG-TSNP-10-1
Produkt ist nicht verfügbar
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CY7C1041GN-10VXI Infineon-CY7C1041GN_4-Mbit_(256K_words_16_bit)_Static_RAM-DataSheet-v05_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed82ae859a5&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
CY7C1041GN-10VXI
Hersteller: Infineon Technologies
Description: IC SRAM 4MBIT PARALLEL 44SOJ
Packaging: Tube
Package / Case: 44-BSOJ (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 4Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 44-SOJ
Write Cycle Time - Word, Page: 10ns
Memory Interface: Parallel
Access Time: 10 ns
Memory Organization: 256K x 16
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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BSD235N L6327 BSD235N_Rev2.1.pdf?folderId=db3a3043156fd573011622e10b5c1f67&fileId=db3a30431add1d95011afc70075c04e0
BSD235N L6327
Hersteller: Infineon Technologies
Description: MOSFET 2N-CH 20V 0.95A SOT363
Produkt ist nicht verfügbar
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BSD235N L6327 BSD235N_Rev2.1.pdf?folderId=db3a3043156fd573011622e10b5c1f67&fileId=db3a30431add1d95011afc70075c04e0
BSD235N L6327
Hersteller: Infineon Technologies
Description: MOSFET 2N-CH 20V 0.95A SOT363
Produkt ist nicht verfügbar
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BSC025N03LSGATMA1 BSC025N03LS_rev1.6.pdf?fileId=db3a304412b407950112b4274ff53bff
BSC025N03LSGATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 30V 25A/100A TDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 2.5mOhm @ 30A, 10V
Power Dissipation (Max): 2.5W (Ta), 83W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: PG-TDSON-8-5
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6100 pF @ 15 V
auf Bestellung 30000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5000+0.89 EUR
10000+0.85 EUR
Mindestbestellmenge: 5000
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BSC025N03LSGATMA1 BSC025N03LS_rev1.6.pdf?fileId=db3a304412b407950112b4274ff53bff
BSC025N03LSGATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 30V 25A/100A TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 2.5mOhm @ 30A, 10V
Power Dissipation (Max): 2.5W (Ta), 83W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: PG-TDSON-8-5
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6100 pF @ 15 V
auf Bestellung 38848 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
8+2.25 EUR
10+1.84 EUR
100+1.43 EUR
500+1.22 EUR
1000+0.99 EUR
2000+0.93 EUR
Mindestbestellmenge: 8
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BCM89071A1CUBXGT Infineon-CYW89071_Single_Chip_Automotive_Grade_Bluetooth_Transceiver_and_Baseband_Processor-DataSheet-v09_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee1ff4c6835&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_a
BCM89071A1CUBXGT
Hersteller: Infineon Technologies
Description: IC RF TXRX+MCU BLUETOOTH 42UFBGA
Produkt ist nicht verfügbar
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SPP07N600S5 Infineon-SPP_I07N60S5-DS-v02_07-en.pdf?fileId=db3a304412b407950112b42c81144713
SPP07N600S5
Hersteller: Infineon Technologies
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Part Status: Active
auf Bestellung 400 Stücke:
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Anzahl Preis
400+1.52 EUR
Mindestbestellmenge: 400
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IPB60R299CPAATMA1 INFN-S-A0003614947-1.pdf?t.download=true&u=5oefqw
IPB60R299CPAATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 600V 11A TO263-3
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 299mOhm @ 6.6A, 10V
Power Dissipation (Max): 96W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 440µA
Supplier Device Package: PG-TO263-3-2
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 100 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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IPB100N04S2L-03ATMA2 INFNS08598-1.pdf?t.download=true&u=5oefqw
IPB100N04S2L-03ATMA2
Hersteller: Infineon Technologies
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 3.3mOhm @ 80A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TO263-3-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 230 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6000 pF @ 25 V
auf Bestellung 17740 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
144+3.68 EUR
Mindestbestellmenge: 144
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IPB100N04S2L03ATMA2 Infineon-IPP_B100N04S2L-DS-v01_00-en.pdf?fileId=db3a304412b407950112b42b9443455d&ack=t
IPB100N04S2L03ATMA2
Hersteller: Infineon Technologies
Description: MOSFET N-CH 40V 100A TO263-3
Packaging: Bulk
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 3mOhm @ 80A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TO263-3-2
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 230 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6000 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 51328 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
144+3.23 EUR
Mindestbestellmenge: 144
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IPB100N04S204ATMA4 IPx100N04S2-04.pdf
IPB100N04S204ATMA4
Hersteller: Infineon Technologies
Description: MOSFET N-CH 40V 100A TO263-3
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 3.3mOhm @ 80A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PG-TO263-3-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 172 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5300 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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IKCM20L60GBXKMA1 INFN-S-A0003820769-1.pdf?t.download=true&u=5oefqw
IKCM20L60GBXKMA1
Hersteller: Infineon Technologies
Description: INTELLIGENT POWER MODULE (IPM)
Packaging: Bulk
Mounting Type: Through Hole
Type: IGBT
Configuration: 3 Phase
Part Status: Active
auf Bestellung 6655 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
64+7.32 EUR
Mindestbestellmenge: 64
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IKCM15H60HAXXMA1
IKCM15H60HAXXMA1
Hersteller: Infineon Technologies
Description: INTELLIGENT POWER MODULE (IPM)
Packaging: Bulk
Package / Case: 24-PowerDIP Module
Mounting Type: Through Hole
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 15A
Operating Temperature: -40°C ~ 125°C
Output Configuration: Half Bridge (3)
Voltage - Supply: 13.5V ~ 18.5V
Applications: Fan Motor Driver
Technology: IGBT
Supplier Device Package: 24-DIP
Motor Type - Stepper: Multiphase
Motor Type - AC, DC: AC, Synchronous
Part Status: Active
Produkt ist nicht verfügbar
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IKCM10H60HAXKMA1 IKCM10H60HA.pdf
IKCM10H60HAXKMA1
Hersteller: Infineon Technologies
Description: IFPS MODULES 24MDIP
Packaging: Bulk
Package / Case: 24-PowerDIP Module (1.028", 26.10mm)
Mounting Type: Through Hole
Type: IGBT
Configuration: 3 Phase
Voltage - Isolation: 2000Vrms
Part Status: Obsolete
Current: 10 A
Voltage: 600 V
auf Bestellung 624 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
50+9.41 EUR
Mindestbestellmenge: 50
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IKCM20L60HAXKMA1 IKCM20L60HA.pdf
IKCM20L60HAXKMA1
Hersteller: Infineon Technologies
Description: IFPS MODULES 24MDIP
Packaging: Bulk
Package / Case: 24-PowerDIP Module (1.028", 26.10mm)
Mounting Type: Through Hole
Type: IGBT
Configuration: 3 Phase
Voltage - Isolation: 2000Vrms
Part Status: Obsolete
Current: 20 A
Voltage: 600 V
auf Bestellung 513 Stücke:
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Anzahl Preis
41+11.42 EUR
Mindestbestellmenge: 41
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IKCM20L60HDXKMA1 IKCM20L60HD.pdf
IKCM20L60HDXKMA1
Hersteller: Infineon Technologies
Description: IFPS MODULES 24MDIP
Packaging: Bulk
Package / Case: 24-PowerDIP Module (1.028", 26.10mm)
Mounting Type: Through Hole
Type: IGBT
Configuration: 3 Phase
Voltage - Isolation: 2000Vrms
Part Status: Obsolete
Current: 20 A
Voltage: 600 V
auf Bestellung 560 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
30+15.69 EUR
Mindestbestellmenge: 30
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IRFS4510TRLPBF IRSDS13318-1.pdf?t.download=true&u=5oefqw
IRFS4510TRLPBF
Hersteller: Infineon Technologies
Description: MOSFET N-CH 100V 61A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 61A (Tc)
Rds On (Max) @ Id, Vgs: 13.9mOhm @ 37A, 10V
Power Dissipation (Max): 140W (Tc)
Vgs(th) (Max) @ Id: 4V @ 100µA
Supplier Device Package: PG-TO263-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 87 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3180 pF @ 50 V
auf Bestellung 1600 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
800+1.48 EUR
1600+1.37 EUR
Mindestbestellmenge: 800
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IRFS4510TRLPBF IRSDS13318-1.pdf?t.download=true&u=5oefqw
IRFS4510TRLPBF
Hersteller: Infineon Technologies
Description: MOSFET N-CH 100V 61A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 61A (Tc)
Rds On (Max) @ Id, Vgs: 13.9mOhm @ 37A, 10V
Power Dissipation (Max): 140W (Tc)
Vgs(th) (Max) @ Id: 4V @ 100µA
Supplier Device Package: PG-TO263-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 87 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3180 pF @ 50 V
auf Bestellung 1600 Stücke:
Lieferzeit 10-14 Tag (e)
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BTT62001EJA INFN-S-A0000037746-1.pdf?t.download=true&u=5oefqw
BTT62001EJA
Hersteller: Infineon Technologies
Description: SMART HIGH-SIDE POWER SWITCH
Packaging: Bulk
Features: Slew Rate Controlled
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 200mOhm
Input Type: Non-Inverting
Voltage - Load: 5V ~ 36V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 1.5A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-DSO-8-44
Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, Over Voltage, UVLO
Part Status: Active
Produkt ist nicht verfügbar
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BTT62004ESAXUMA1 Infineon-BTT6200-4ESA-DS-v01_00-EN.pdf?fileId=5546d46269e1c019016a22035b660d8d
BTT62004ESAXUMA1
Hersteller: Infineon Technologies
Description: IC PWR SWTCH N-CHAN 1:1 TSDSO-24
Packaging: Cut Tape (CT)
Package / Case: 24-TSSOP (0.154", 3.90mm Width) Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 4
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 200mOhm
Input Type: Non-Inverting
Voltage - Load: 5V ~ 36V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 1A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-TSDSO-24-21
Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, Over Voltage
Part Status: Active
Grade: Automotive
Qualification: AEC-Q100
auf Bestellung 8518 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+6.14 EUR
10+4.65 EUR
25+4.27 EUR
100+3.86 EUR
250+3.67 EUR
500+3.55 EUR
1000+3.45 EUR
Mindestbestellmenge: 3
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BTT62001ENAXUMA1 Infineon-BTT6200-1ENA-DS-v01_00-EN.pdf?fileId=5546d462636cc8fb01645f3a31f312e9
BTT62001ENAXUMA1
Hersteller: Infineon Technologies
Description: IC PWR SWITCH N-CHAN 1:1 TDSO-8
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 200mOhm
Input Type: Non-Inverting
Voltage - Load: 8V ~ 36V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 1.5A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-TDSO-8-31
Fault Protection: Over Temperature, Over Voltage, Short Circuit
Grade: Automotive
Qualification: AEC-Q100
auf Bestellung 17685 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
8+2.48 EUR
10+1.81 EUR
25+1.65 EUR
100+1.46 EUR
250+1.38 EUR
500+1.32 EUR
1000+1.28 EUR
Mindestbestellmenge: 8
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ESD239B1W0201E6327XTSA1 Infineon-ESD239-B1-W0201-DS-v01_00-EN.pdf?fileId=5546d4625cc9456a015ce93613b14885
ESD239B1W0201E6327XTSA1
Hersteller: Infineon Technologies
Description: TVS DIODE 22VWM 26.5VC WLL-2-3
Packaging: Tape & Reel (TR)
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C
Applications: General Purpose
Capacitance @ Frequency: 3.2pF @ 1GHz
Current - Peak Pulse (10/1000µs): 3A (8/20µs)
Voltage - Reverse Standoff (Typ): 22V
Supplier Device Package: WLL-2-3
Bidirectional Channels: 1
Voltage - Clamping (Max) @ Ipp: 26.5V
Power - Peak Pulse: 80W
Power Line Protection: No
auf Bestellung 15000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
15000+0.044 EUR
Mindestbestellmenge: 15000
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ESD239B1W0201E6327XTSA1 Infineon-ESD239-B1-W0201-DS-v01_00-EN.pdf?fileId=5546d4625cc9456a015ce93613b14885
ESD239B1W0201E6327XTSA1
Hersteller: Infineon Technologies
Description: TVS DIODE 22VWM 26.5VC WLL-2-3
Packaging: Cut Tape (CT)
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C
Applications: General Purpose
Capacitance @ Frequency: 3.2pF @ 1GHz
Current - Peak Pulse (10/1000µs): 3A (8/20µs)
Voltage - Reverse Standoff (Typ): 22V
Supplier Device Package: WLL-2-3
Bidirectional Channels: 1
Voltage - Clamping (Max) @ Ipp: 26.5V
Power - Peak Pulse: 80W
Power Line Protection: No
auf Bestellung 44050 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
72+0.25 EUR
102+0.17 EUR
234+0.076 EUR
500+0.07 EUR
1000+0.065 EUR
2000+0.062 EUR
5000+0.058 EUR
Mindestbestellmenge: 72
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IPA180N10N3GXKSA1 IPA180N10N3+G_Rev2.2.pdf?folderId=db3a304313b8b5a60113cee8763b02d7&fileId=db3a30432239cccd0122602bfa617f29
IPA180N10N3GXKSA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 100V 28A TO220-FP
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 28A, 10V
Power Dissipation (Max): 30W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 35µA
Supplier Device Package: PG-TO220-FP
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 50 V
auf Bestellung 400 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
400+1.26 EUR
Mindestbestellmenge: 400
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IR3596MGB04TRP
Hersteller: Infineon Technologies
Description: IC DC/DC MULTIPHASE CTLR
Produkt ist nicht verfügbar
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CY25404ZXI216 Infineon-CY25404_QUAD_PLL_PROGRAMMABLE_CLOCK_GENERATOR_WITH_SPREAD_SPECTRUM-AdditionalTechnicalInformation-v09_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec65e4e3c93&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe
CY25404ZXI216
Hersteller: Infineon Technologies
Description: TSBU
Packaging: Tube
DigiKey Programmable: Not Verified
auf Bestellung 10942 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
77+6.64 EUR
Mindestbestellmenge: 77
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IPW50R199CP INFNS16481-1.pdf?t.download=true&u=5oefqw
IPW50R199CP
Hersteller: Infineon Technologies
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 199mOhm @ 9.9A, 10V
Power Dissipation (Max): 139W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 660µA
Supplier Device Package: PG-TO247-3-21
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 100 V
Produkt ist nicht verfügbar
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BCR602XTSA1 Infineon-BCR602-DS-v01_01-EN.pdf?fileId=5546d46268554f4a016855acb7e80020
BCR602XTSA1
Hersteller: Infineon Technologies
Description: IC LED DRVR LIN PWM 10MA SOT23-6
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Number of Outputs: 1
Type: Linear
Applications: LED Lighting
Current - Output / Channel: 10mA
Internal Switch(s): No
Topology: Linear
Supplier Device Package: PG-SOT23-6
Dimming: Analog, PWM
Voltage - Supply (Max): 60V
Part Status: Active
Produkt ist nicht verfügbar
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BCR602XTSA1 Infineon-BCR602-DS-v01_01-EN.pdf?fileId=5546d46268554f4a016855acb7e80020
BCR602XTSA1
Hersteller: Infineon Technologies
Description: IC LED DRVR LIN PWM 10MA SOT23-6
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Number of Outputs: 1
Type: Linear
Applications: LED Lighting
Current - Output / Channel: 10mA
Internal Switch(s): No
Topology: Linear
Supplier Device Package: PG-SOT23-6
Dimming: Analog, PWM
Voltage - Supply (Max): 60V
Part Status: Active
auf Bestellung 2620 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
18+1.02 EUR
25+0.72 EUR
28+0.64 EUR
100+0.56 EUR
250+0.52 EUR
500+0.5 EUR
1000+0.48 EUR
Mindestbestellmenge: 18
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SLE-5532-M3.2
Hersteller: Infineon Technologies
Description: INFINEON CHIP CARD INTELLIGENT 2
auf Bestellung 7690 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
751+0.71 EUR
Mindestbestellmenge: 751
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BSP89H6327XTSA1 Infineon-BSP89-DS-v02_02-en.pdf?fileId=db3a30433b47825b013b4b8a07f90d55
BSP89H6327XTSA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 240V 350MA SOT223-4
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 350mA (Ta)
Rds On (Max) @ Id, Vgs: 6Ohm @ 350mA, 10V
Power Dissipation (Max): 1.8W (Ta)
Vgs(th) (Max) @ Id: 1.8V @ 108µA
Supplier Device Package: PG-SOT223-4
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 240 V
Gate Charge (Qg) (Max) @ Vgs: 6.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 140 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1000+0.3 EUR
2000+0.29 EUR
Mindestbestellmenge: 1000
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BSP89H6327XTSA1 Infineon-BSP89-DS-v02_02-en.pdf?fileId=db3a30433b47825b013b4b8a07f90d55
BSP89H6327XTSA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 240V 350MA SOT223-4
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 350mA (Ta)
Rds On (Max) @ Id, Vgs: 6Ohm @ 350mA, 10V
Power Dissipation (Max): 1.8W (Ta)
Vgs(th) (Max) @ Id: 1.8V @ 108µA
Supplier Device Package: PG-SOT223-4
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 240 V
Gate Charge (Qg) (Max) @ Vgs: 6.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 140 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 4540 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
24+0.76 EUR
37+0.48 EUR
100+0.38 EUR
500+0.37 EUR
Mindestbestellmenge: 24
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IM240M6Z1BALSA1 IM240-M6xxB.pdf
Hersteller: Infineon Technologies
Description: MODULE IPM 3PHASE SOP23
Packaging: Tube
Package / Case: 23-PowerSMD Module, Gull Wing
Mounting Type: Surface Mount
Type: IGBT
Configuration: 3 Phase Inverter
Voltage - Isolation: 1900Vrms
Current: 4 A
Voltage: 600 V
Produkt ist nicht verfügbar
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IM240S6Z1BALSA1 IM240-S6xxB.pdf
Hersteller: Infineon Technologies
Description: MODULE IPM 3PHASE SOP23
Packaging: Tube
Package / Case: 23-SMD Module
Mounting Type: Surface Mount
Type: IGBT
Configuration: 3 Phase Inverter
Voltage - Isolation: 1900Vrms
Current: 3 A
Voltage: 600 V
Produkt ist nicht verfügbar
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TLE8718SAAUMA4 Infineon-TLE8718SA-DS-v01_01-en.pdf?fileId=db3a304339bdde1f0139c4c4cb7c58df
TLE8718SAAUMA4
Hersteller: Infineon Technologies
Description: IC PWR SWITCH N-CH 1:18 DSO-36
Packaging: Cut Tape (CT)
Package / Case: 36-BSSOP (0.433", 11.00mm Width) Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 18
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Low Side
Voltage - Load: 4.5V ~ 5.5V
Ratio - Input:Output: 1:18
Supplier Device Package: PG-DSO-36-54
Fault Protection: Over Temperature, Short Circuit, UVLO
Part Status: Active
Grade: Automotive
auf Bestellung 1335 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+16.46 EUR
10+12.83 EUR
25+11.92 EUR
100+10.93 EUR
250+10.45 EUR
Mindestbestellmenge: 2
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BTS500251TEAAUMA1 Infineon-BTS50025-1TEA-DS-V01_00-EN-DataSheet-v01_00-EN.pdf?fileId=5546d4626cb27db2016d4322f14b7d2a
BTS500251TEAAUMA1
Hersteller: Infineon Technologies
Description: HIC-PROFET
Packaging: Tape & Reel (TR)
Package / Case: TO-252-5, DPak (4 Leads + Tab), TO-252AD
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 5mOhm
Input Type: Non-Inverting
Voltage - Load: 5.8V ~ 18V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 24A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-TO252-5-11
Fault Protection: Over Temperature, Over Voltage, Reverse Battery, Short Circuit
Part Status: Active
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2500+3.44 EUR
Mindestbestellmenge: 2500
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PSB50501ELV1.3-G
Hersteller: Infineon Technologies
Description: AMAZON-E (DFE) ADSL CHIP
Packaging: Bulk
auf Bestellung 3520 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
25+17.96 EUR
Mindestbestellmenge: 25
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DEMOBRDTLD5095ELV1TOBO1 DEMOBRDTLD5095ELV1TOBO1_Web.pdf
DEMOBRDTLD5095ELV1TOBO1
Hersteller: Infineon Technologies
Description: EVAL BOARD FOR TLD5095EL
Packaging: Box
Voltage - Output: 4.5V ~ 40V
Voltage - Input: 12V ~ 45V
Utilized IC / Part: TLD5095EL
Supplied Contents: Board(s)
Outputs and Type: 1 Non-Isolated Output
Contents: Board(s)
auf Bestellung 3 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+216.27 EUR
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2PS12017E34W32132NOSA1 Infineon-2PS12017E34W32132-DS-v02_01-en_de.pdf?fileId=db3a304332fc1ee7013317532873727f
2PS12017E34W32132NOSA1
Hersteller: Infineon Technologies
Description: MODULE IGBT STACK A-PS4-1
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -25°C ~ 55°C
NTC Thermistor: No
Supplier Device Package: Module
Produkt ist nicht verfügbar
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BFP640E6327 INFNS10679-1.pdf?t.download=true&u=5oefqw
BFP640E6327
Hersteller: Infineon Technologies
Description: RF TRANS NPN 4.5V 40GHZ PGSOT343
Packaging: Bulk
Package / Case: SC-82A, SOT-343
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 24dB
Power - Max: 200mW
Current - Collector (Ic) (Max): 50mA
Voltage - Collector Emitter Breakdown (Max): 4.5V
DC Current Gain (hFE) (Min) @ Ic, Vce: 110 @ 30mA, 3V
Frequency - Transition: 40GHz
Noise Figure (dB Typ @ f): 0.65dB ~ 1.2dB @ 1.8GHz ~ 6GHz
Supplier Device Package: PG-SOT343-4
Part Status: Active
auf Bestellung 26583 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
866+0.57 EUR
Mindestbestellmenge: 866
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BFP640FESDH6327XTSA1 Infineon-BFP540ESD-DS-v02_00-EN.pdf?fileId=5546d462689a790c01690f0382ea3920
BFP640FESDH6327XTSA1
Hersteller: Infineon Technologies
Description: RF TRANS NPN 4.7V 46GHZ 4-TSFP
Packaging: Cut Tape (CT)
Package / Case: 4-SMD, Flat Leads
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 8B ~ 30.5dB
Power - Max: 200mW
Current - Collector (Ic) (Max): 50mA
Voltage - Collector Emitter Breakdown (Max): 4.7V
DC Current Gain (hFE) (Min) @ Ic, Vce: 110 @ 30mA, 3V
Frequency - Transition: 46GHz
Noise Figure (dB Typ @ f): 0.55dB ~ 1.7dB @ 150MHz ~ 10GHz
Supplier Device Package: 4-TSFP
Part Status: Active
auf Bestellung 667 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
24+0.76 EUR
33+0.54 EUR
37+0.48 EUR
100+0.42 EUR
250+0.39 EUR
500+0.37 EUR
Mindestbestellmenge: 24
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BFP620E7764 INFNS10686-1.pdf?t.download=true&u=5oefqw
BFP620E7764
Hersteller: Infineon Technologies
Description: RF BIPOLAR TRANSISTOR
Packaging: Bulk
Package / Case: SC-82A, SOT-343
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 21.5dB
Power - Max: 185mW
Current - Collector (Ic) (Max): 80mA
Voltage - Collector Emitter Breakdown (Max): 2.8V
DC Current Gain (hFE) (Min) @ Ic, Vce: 110 @ 50mA, 1.5V
Frequency - Transition: 65GHz
Noise Figure (dB Typ @ f): 0.7dB ~ 1.3dB @ 1.8GHz ~ 6GHz
Supplier Device Package: PG-SOT343-4
Part Status: Active
Produkt ist nicht verfügbar
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IRF5210STRRPBF irf5210spbf.pdf?fileId=5546d462533600a4015355e35f77198e
IRF5210STRRPBF
Hersteller: Infineon Technologies
Description: MOSFET P-CH 100V 38A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 38A (Tc)
Rds On (Max) @ Id, Vgs: 60mOhm @ 38A, 10V
Power Dissipation (Max): 3.1W (Ta), 170W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 230 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2780 pF @ 25 V
Produkt ist nicht verfügbar
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SPP11N65C3HKSA1 SP%28P%2CA%2CI%2911N65C3.pdf
Hersteller: Infineon Technologies
Description: MOSFET N-CH 650V 11A TO-220
Packaging: Tube
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Part Status: Active
Produkt ist nicht verfügbar
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PBL3766/1NS ERICS00253-1.pdf?t.download=true&u=5oefqw
Hersteller: Infineon Technologies
Description: BIPOLAR SLIC
Packaging: Bulk
Package / Case: 22-DIP
Mounting Type: Through Hole
Function: Subscriber Line Interface Concept (SLIC)
Interface: 2-Wire
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: -24V ~ -58V
Supplier Device Package: 22-DIP
Part Status: Active
Number of Circuits: 1
auf Bestellung 10200 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
54+9.93 EUR
Mindestbestellmenge: 54
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IRFHM3911TRPBF irfhm3911pbf.pdf?fileId=5546d462533600a40153561ff23f1f2b
IRFHM3911TRPBF
Hersteller: Infineon Technologies
Description: MOSFET N-CH 100V 3.2A/20A 8PQFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.2A (Ta), 20A (Tc)
Rds On (Max) @ Id, Vgs: 115mOhm @ 6.3A, 10V
Power Dissipation (Max): 2.8W (Ta), 29W (Tc)
Vgs(th) (Max) @ Id: 4V @ 35µA
Supplier Device Package: 8-PQFN (3x3)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 760 pF @ 50 V
auf Bestellung 4000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4000+0.37 EUR
Mindestbestellmenge: 4000
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IRFHM3911TRPBF irfhm3911pbf.pdf?fileId=5546d462533600a40153561ff23f1f2b
IRFHM3911TRPBF
Hersteller: Infineon Technologies
Description: MOSFET N-CH 100V 3.2A/20A 8PQFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.2A (Ta), 20A (Tc)
Rds On (Max) @ Id, Vgs: 115mOhm @ 6.3A, 10V
Power Dissipation (Max): 2.8W (Ta), 29W (Tc)
Vgs(th) (Max) @ Id: 4V @ 35µA
Supplier Device Package: 8-PQFN (3x3)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 760 pF @ 50 V
auf Bestellung 4676 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
12+1.57 EUR
18+1 EUR
100+0.68 EUR
500+0.54 EUR
1000+0.49 EUR
2000+0.45 EUR
Mindestbestellmenge: 12
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ICE3B0365JG INFN-S-A0003615022-1.pdf?t.download=true&u=5oefqw
Hersteller: Infineon Technologies
Description: IC OFFLINE SWITCH FLYBACK 12DSO
Packaging: Bulk
Package / Case: 12-BSOP (0.295", 7.50mm Width) Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -25°C ~ 130°C (TJ)
Duty Cycle: 75%
Frequency - Switching: 67kHz
Internal Switch(s): Yes
Voltage - Breakdown: 650V
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 10.3V ~ 26V
Supplier Device Package: PG-DSO-12
Fault Protection: Current Limiting, Open Loop, Over Load, Over Temperature, Over Voltage
Control Features: Soft Start
Part Status: Active
auf Bestellung 2979 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
373+1.21 EUR
Mindestbestellmenge: 373
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ICE3B0365J-T INFNS27652-1.pdf?t.download=true&u=5oefqw
Hersteller: Infineon Technologies
Description: OFF-LINE SMPS CURRENT MODE CONTR
Packaging: Bulk
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Duty Cycle: 75%
Frequency - Switching: 67kHz
Internal Switch(s): Yes
Voltage - Breakdown: 650V
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 10.3V ~ 26V
Supplier Device Package: PG-DIP-8
Fault Protection: Current Limiting, Over Load, Over Temperature, Over Voltage
Voltage - Start Up: 18 V
Control Features: Soft Start
Part Status: Active
Power (Watts): 22 W
auf Bestellung 7234 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
346+1.31 EUR
Mindestbestellmenge: 346
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ESD5V3U4RRSH6327XTSA1 esd5v3u4rrs.pdf?folderId=db3a30431441fb5d011488a9e66f0ded&fileId=db3a30431c69a49d011cad6ae0c10a10
ESD5V3U4RRSH6327XTSA1
Hersteller: Infineon Technologies
Description: TVS DIODE 5.3VWM 15VC PGSOT363PO
Packaging: Tape & Reel (TR)
Package / Case: 6-VSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Type: Steering (Rail to Rail)
Operating Temperature: -55°C ~ 125°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 0.4pF @ 1MHz
Current - Peak Pulse (10/1000µs): 3A (8/20µs)
Voltage - Reverse Standoff (Typ): 5.3V (Max)
Supplier Device Package: PG-SOT363-PO
Unidirectional Channels: 4
Voltage - Breakdown (Min): 6.3V
Voltage - Clamping (Max) @ Ipp: 15V
Power - Peak Pulse: 50W
Power Line Protection: Yes
Produkt ist nicht verfügbar
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PTFA092201F V1 PTFA092201(E,F).pdf
PTFA092201F V1
Hersteller: Infineon Technologies
Description: IC FET RF LDMOS 220W H-37260-2
Produkt ist nicht verfügbar
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