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PX3897EDQGG005XUMA1 Infineon Technologies Description: IC REGULATOR 16VQFN
Produkt ist nicht verfügbar
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ICA32V21X1SA1 Infineon Technologies Description: CHIP BARE DIE
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IPD65R660CFDAATMA1 IPD65R660CFDAATMA1 Infineon Technologies Infineon-IPD65R660CFDA-DS-v02_02-EN.pdf?fileId=db3a30433f764301013f7bd7d66028c6 Description: MOSFET N-CH 650V 6A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 660mOhm @ 3.22A, 10V
Power Dissipation (Max): 62.5W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 214.55µA
Supplier Device Package: PG-TO252-3
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 543 pF @ 100 V
Qualification: AEC-Q101
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10+2.18 EUR
100+1.49 EUR
500+1.19 EUR
1000+1.15 EUR
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IPB120N06S403ATMA2 IPB120N06S403ATMA2 Infineon Technologies Infineon-I120N06S4_03-DS-v01_00-en.pdf?fileId=db3a30431ff98815012038c634110ccc Description: MOSFET N-CH 60V 120A TO263-3
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 3.2mOhm @ 100A, 10V
Power Dissipation (Max): 167W (Tc)
Vgs(th) (Max) @ Id: 4V @ 120µA
Supplier Device Package: PG-TO263-3-2
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 160 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13150 pF @ 25 V
Qualification: AEC-Q101
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SPD30N03S2L-20G SPD30N03S2L-20G Infineon Technologies Infineon-SPD30N03S2L-DS-v01_02-en[1].pdf?fileId=db3a30431b3e89eb011b96e752ea0e08 Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Part Status: Active
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SPD30N03S2L-07 G SPD30N03S2L-07 G Infineon Technologies Infineon-SPD30N03S2L-DS-v01_02-en[1].pdf?fileId=db3a30431b3e89eb011b96e752ea0e08 Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 6.7mOhm @ 30A, 10V
Power Dissipation (Max): 136W (Tc)
Vgs(th) (Max) @ Id: 2V @ 85µA
Supplier Device Package: PG-TO252-3-313
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2530 pF @ 25 V
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BSO130N03MSG BSO130N03MSG Infineon Technologies INFNS16226-1.pdf?t.download=true&u=5oefqw Description: SMALL SIGNAL N-CHANNEL MOSFET
Packaging: Bulk
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Ta)
Rds On (Max) @ Id, Vgs: 13mOhm @ 11.1A, 10V
Power Dissipation (Max): 1.56W (Ta)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-DSO-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 15 V
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S25FL128SAGBHVB00 S25FL128SAGBHVB00 Infineon Technologies Infineon-S25FL128S_S25FL256S_128_Mb_(16_MB)_256_Mb_(32_MB)_3.0V_SPI_Flash_Memory-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ecfb6a64a17 Description: IC FLASH 128MBIT SPI/QUAD 24BGA
Packaging: Tray
Package / Case: 24-TBGA
Mounting Type: Surface Mount
Memory Size: 128Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 133 MHz
Memory Format: FLASH
Supplier Device Package: 24-BGA (6x8)
Part Status: Active
Memory Interface: SPI - Quad I/O
Memory Organization: 16M x 8
DigiKey Programmable: Not Verified
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S79FL256SDSMFVG01 S79FL256SDSMFVG01 Infineon Technologies download Description: IC FLASH 256MBIT SPI/QUAD 16SOIC
Packaging: Tube
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Memory Size: 256Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 80 MHz
Memory Format: FLASH
Supplier Device Package: 16-SOIC
Part Status: Active
Memory Interface: SPI - Quad I/O
Memory Organization: 32M x 8
DigiKey Programmable: Verified
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470+11.06 EUR
705+10.83 EUR
1175+10.55 EUR
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D740N40TXPSA1 D740N40TXPSA1 Infineon Technologies D740N.pdf Description: DIODE GEN PURP 4KV 750A
Packaging: Bulk
Package / Case: DO-200AB, B-PUK
Mounting Type: Clamp On
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 750A
Operating Temperature - Junction: -40°C ~ 160°C
Voltage - DC Reverse (Vr) (Max): 4000 V
Voltage - Forward (Vf) (Max) @ If: 1.45 V @ 700 A
Current - Reverse Leakage @ Vr: 70 mA @ 4000 V
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TLE4274GV50ATMA2 TLE4274GV50ATMA2 Infineon Technologies Infineon-TLE4274-DataSheet-v01_71-EN.pdf?fileId=8ac78c8c93dda25b0194f49872dd00d1 Description: IC REG LIN 5V 400MA PG-TO263-3-1
Packaging: Tape & Reel (TR)
Package / Case: TO-263-4, D2PAK (3 Leads + Tab), TO-263AA
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 400mA
Operating Temperature: -40°C ~ 150°C
Output Configuration: Positive
Current - Quiescent (Iq): 220 µA
Voltage - Input (Max): 40V
Number of Regulators: 1
Supplier Device Package: PG-TO263-3-1
Voltage - Output (Min/Fixed): 5V
Grade: Automotive
Part Status: Active
PSRR: 60dB (100Hz)
Voltage Dropout (Max): 0.5V @ 250mA
Protection Features: Over Current, Over Temperature, Reverse Polarity, Short Circuit
Current - Supply (Max): 30 mA
Qualification: AEC-Q100
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1000+1.58 EUR
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BTS740S2XUMA1 BTS740S2XUMA1 Infineon Technologies Infineon-BTS740S2-DS-v01_00-EN.pdf?fileId=5546d4625a888733015aa390ea280fe0 Description: IC PWR SWITCH N-CHAN 1:1 DSO-20
Features: Status Flag
Packaging: Tape & Reel (TR)
Package / Case: 20-SOIC (0.295", 7.50mm Width)
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 2
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 27mOhm
Input Type: Non-Inverting
Voltage - Load: 5V ~ 34V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 4.9A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-DSO-20
Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, Over Voltage
Grade: Automotive
Part Status: Active
Qualification: AEC-Q100
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1000+5.8 EUR
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BGS16GA14E6327XTSA1 BGS16GA14E6327XTSA1 Infineon Technologies Infineon-BGS16GA14-DS-v03_00-EN.pdf?fileId=5546d46254e133b401552f6be87069f8 Description: IC RF SWITCH SP6T 3.8GHZ ATSLP14
Packaging: Tape & Reel (TR)
Package / Case: 14-UFQFN Exposed Pad
Mounting Type: Surface Mount
Circuit: SP6T
RF Type: LTE, W-CDMA
Operating Temperature: -30°C ~ 85°C
Voltage - Supply: 3V
Insertion Loss: 0.5dB
Frequency Range: 100MHz ~ 3.8GHz
Test Frequency: 3GHz
Isolation: 33dB
Supplier Device Package: PG-ATSLP-14-8
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TLI4971A120T5E0001XUMA1 TLI4971A120T5E0001XUMA1 Infineon Technologies Infineon-TLI4971-A120T5-E0001-DataSheet-v01_01-EN.pdf?fileId=5546d462700c0ae6017034d731621b09 Description: CURRENT SENSOR PG-TISON-8-5
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Supplier Device Package: PG-TISON-8-5
Part Status: Active
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2500+3.9 EUR
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ICE3B1565 ICE3B1565 Infineon Technologies INFNS22601-1.pdf?t.download=true&u=5oefqw Description: IC OFFLINE SWITCH FLYBACK 8DIP
Packaging: Bulk
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -25°C ~ 130°C (TJ)
Duty Cycle: 75%
Frequency - Switching: 67kHz
Internal Switch(s): Yes
Voltage - Breakdown: 650V
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 8.5V ~ 21V
Supplier Device Package: PG-DIP-8
Fault Protection: Current Limiting, Open Circuit, Over Load, Over Temperature, Over Voltage
Control Features: Soft Start
Part Status: Active
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TLE9015QUTRXBRGTOBO1 TLE9015QUTRXBRGTOBO1 Infineon Technologies Description: TLE9015QU_TRX_BRG
Packaging: Bulk
Function: Battery Monitor
Type: Power Management
Utilized IC / Part: TLE9012AQU
Supplied Contents: Board(s)
Primary Attributes: Cell Balancer
Embedded: No
Produkt ist nicht verfügbar
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98-0086PBF Infineon Technologies Description: IC GATE DRIVER HALF BRIDGE 8SOIC
Packaging: Tube
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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IRFR3711ZTRPBF IRFR3711ZTRPBF Infineon Technologies irfr3711zpbf.pdf?fileId=5546d462533600a401535631d86620d6 Description: MOSFET N-CH 20V 93A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 93A (Tc)
Rds On (Max) @ Id, Vgs: 5.7mOhm @ 15A, 10V
Power Dissipation (Max): 79W (Tc)
Vgs(th) (Max) @ Id: 2.45V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2160 pF @ 10 V
auf Bestellung 11072 Stücke:
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100+1.28 EUR
500+1.09 EUR
1000+0.89 EUR
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IPD050N10N5ATMA1 IPD050N10N5ATMA1 Infineon Technologies Infineon-IPD050N10N5-DS-v02_01-EN.pdf?fileId=5546d4625b3ca4ec015b615bb7536713 Description: MOSFET N-CH 100V 80A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 5mOhm @ 40A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 84µA
Supplier Device Package: PG-TO252-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4700 pF @ 50 V
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2500+1.42 EUR
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IPD050N10N5ATMA1 IPD050N10N5ATMA1 Infineon Technologies Infineon-IPD050N10N5-DS-v02_01-EN.pdf?fileId=5546d4625b3ca4ec015b615bb7536713 Description: MOSFET N-CH 100V 80A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 5mOhm @ 40A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 84µA
Supplier Device Package: PG-TO252-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4700 pF @ 50 V
auf Bestellung 6416 Stücke:
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100+2.04 EUR
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IPA050N10NM5SXKSA1 IPA050N10NM5SXKSA1 Infineon Technologies Infineon-IPA050N10NM5S-DataSheet-v02_01-EN.pdf?fileId=5546d4626cb27db2016d5cfdf4f16e2d Description: MOSFET N-CH 100V 66A TO220
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 66A (Tc)
Rds On (Max) @ Id, Vgs: 5mOhm @ 33A, 10V
Power Dissipation (Max): 38W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 84µA
Supplier Device Package: PG-TO220 Full Pack
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4700 pF @ 50 V
auf Bestellung 530 Stücke:
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100+2.47 EUR
500+2.01 EUR
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STT2200N18P55XPSA1 STT2200N18P55XPSA1 Infineon Technologies Infineon-STT2200N18P55-DataSheet-v03_01-EN.pdf?fileId=5546d46272aa54c00172bc99b5485675 Description: THYR / DIODE MODULE DK
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IRF9956TRPBF Infineon Technologies irf9956pbf.pdf?fileId=5546d462533600a40153561210491dd9 Description: MOSFET 2N-CH 30V 3.5A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 3.5A
Input Capacitance (Ciss) (Max) @ Vds: 190pF @ 15V
Rds On (Max) @ Id, Vgs: 100mOhm @ 2.2A, 10V
Gate Charge (Qg) (Max) @ Vgs: 14nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-SO
Part Status: Obsolete
auf Bestellung 297 Stücke:
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17+1.09 EUR
100+0.76 EUR
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XC2785X104F80LABKXUMA1 XC2785X104F80LABKXUMA1 Infineon Technologies XC2785x.pdf Description: IC MCU 16BIT 144LQFP
Produkt ist nicht verfügbar
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BSL716SNH6327XTSA1 BSL716SNH6327XTSA1 Infineon Technologies BSL716SN.pdf Description: MOSFET N-CH 75V 2.5A TSOP-6
Packaging: Bulk
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)
Rds On (Max) @ Id, Vgs: 150mOhm @ 2.5A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 1.8V @ 218µA
Supplier Device Package: PG-TSOP6-6
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 13.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 315 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 38420 Stücke:
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1892+0.24 EUR
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ISP650P06NMXTSA1 ISP650P06NMXTSA1 Infineon Technologies Infineon-ISP650P06NM-DS-v02_00-EN.pdf?fileId=5546d46269e1c019016a06cc34e37280 Description: MOSFET P-CH 60V 3.7A SOT223-4
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.7A (Ta)
Rds On (Max) @ Id, Vgs: 65mOhm @ 3.7A, 10V
Power Dissipation (Max): 1.8W (Ta), 4.2W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1.037mA
Supplier Device Package: PG-SOT223-4
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 30 V
auf Bestellung 1080 Stücke:
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7+2.69 EUR
10+1.77 EUR
100+1.3 EUR
500+1.11 EUR
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AUIRF4104 AUIRF4104 Infineon Technologies IRSDS10905-1.pdf?t.download=true&u=5oefqw Description: MOSFET N-CH 40V 75A TO220
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 5.5mOhm @ 75A, 10V
Power Dissipation (Max): 140W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220
Grade: Automotive
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 25 V
Qualification: AEC-Q101
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KP234XTMA1 KP234XTMA1 Infineon Technologies INFNS15311-1.pdf?t.download=true&u=5oefqw Description: SENSOR 16.68PSIA 4.7V DSOF8-16
Features: Amplified Output, Temperature Compensated
Packaging: Cut Tape (CT)
Package / Case: 8-SMD Module
Output Type: Analog Voltage
Mounting Type: Surface Mount
Output: 1.33 V ~ 4.7 V
Operating Pressure: 5.8PSI ~ 16.68PSI (40kPa ~ 115kPa)
Pressure Type: Absolute
Accuracy: ±0.652PSI (±4.5kPa)
Operating Temperature: -40°C ~ 125°C
Termination Style: SMD (SMT) Tab
Voltage - Supply: 4.5V ~ 5.5V
Applications: Board Mount
Port Style: No Port
Grade: Automotive
Part Status: Active
Qualification: AEC-Q100
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EVALM1CTF610N3TOBO1 EVALM1CTF610N3TOBO1 Infineon Technologies Infineon-IM393-M6F-DS-v02_00-EN.pdf?fileId=5546d462696dbf1201699a947c0278da Description: EVAL BOARD FOR IM393-M6F
Packaging: Bulk
Function: Motor Controller/Driver
Type: Power Management
Contents: Board(s)
Utilized IC / Part: IM393-M6F
Supplied Contents: Board(s)
Part Status: Obsolete
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IRF5805TRPBF-INF Infineon Technologies irf5805pbf.pdf?fileId=5546d462533600a4015355e3f3be19ba Description: IRF5805 - TRANSISTOR
Packaging: Bulk
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.8A (Ta)
Rds On (Max) @ Id, Vgs: 98mOhm @ 3.8A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: Micro6™(TSOP-6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 511 pF @ 25 V
Produkt ist nicht verfügbar
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T6900N95L204A11XPSA1 Infineon Technologies Description: HIGH POWER THYR / DIO
Packaging: Tray
Part Status: Active
Produkt ist nicht verfügbar
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XMC1403Q064X0200AAXUMA1 XMC1403Q064X0200AAXUMA1 Infineon Technologies Infineon-XMC1400-DS-v01_03-EN.pdf?fileId=5546d46250cc1fdf015110a2596343b2 Description: IC MCU 32BIT 200KB FLASH 64VQFN
Packaging: Tape & Reel (TR)
Package / Case: 64-VFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 200KB (200K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: A/D 12x12b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V
Connectivity: CANbus, I2C, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, I2S, POR, PWM, WDT
Supplier Device Package: PG-VQFN-64-6
Part Status: Active
Number of I/O: 48
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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XMC1403Q064X0200AAXUMA1 XMC1403Q064X0200AAXUMA1 Infineon Technologies Infineon-XMC1400-DS-v01_03-EN.pdf?fileId=5546d46250cc1fdf015110a2596343b2 Description: IC MCU 32BIT 200KB FLASH 64VQFN
Packaging: Cut Tape (CT)
Package / Case: 64-VFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 200KB (200K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: A/D 12x12b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V
Connectivity: CANbus, I2C, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, I2S, POR, PWM, WDT
Supplier Device Package: PG-VQFN-64-6
Part Status: Active
Number of I/O: 48
DigiKey Programmable: Not Verified
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250+3.25 EUR
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1000+3.05 EUR
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ILD1150 ILD1150 Infineon Technologies INFNS19121-1.pdf?t.download=true&u=5oefqw Description: LED DRIVER
Packaging: Bulk
Package / Case: 14-LSSOP (0.154", 3.90mm Width) Exposed Pad
Mounting Type: Surface Mount
Number of Outputs: 1
Frequency: 100kHz ~ 500kHz
Type: DC DC Controller
Operating Temperature: -40°C ~ 125°C (TJ)
Applications: Commercial & Industrial Lighting
Internal Switch(s): No
Topology: Flyback, SEPIC, Step-Down (Buck), Step-Up (Boost)
Supplier Device Package: PG-SSOP-14
Dimming: PWM
Voltage - Supply (Min): 4.75V
Voltage - Supply (Max): 45V
Part Status: Active
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SPP15P10PH SPP15P10PH Infineon Technologies Infineon-SPP15P10P_H_G-DS-v01_07-en.pdf?fileId=db3a3043321e49940132246d96be5a7e Description: 15A, 100V, 0.24OHM, P-CHANNEL,
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 240mOhm @ 10.6A, 10V
Power Dissipation (Max): 128W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 1.54mA
Supplier Device Package: PG-TO220-3-1
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1280 pF @ 25 V
Qualification: AEC-Q101
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507+0.95 EUR
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IPDD60R080G7XTMA1 IPDD60R080G7XTMA1 Infineon Technologies Infineon-IPDD60R080G7-DS-v02_00-EN.pdf?fileId=5546d4626102d35a016170882f757a07 Description: MOSFET N-CH 600V 29A HDSOP-10
Packaging: Cut Tape (CT)
Package / Case: 10-PowerSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 29A (Tc)
Rds On (Max) @ Id, Vgs: 80mOhm @ 9.7A, 10V
Power Dissipation (Max): 174W (Tc)
Vgs(th) (Max) @ Id: 4V @ 490µA
Supplier Device Package: PG-HDSOP-10-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1640 pF @ 400 V
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BTS72002EPADAUGHBRDTOBO1 BTS72002EPADAUGHBRDTOBO1 Infineon Technologies Infineon-Customer_evaluation_kit%20_description-UserManual-v01_01-EN.pdf?fileId=5546d4626b2d8e69016bac9ebb6b24c7 Description: PROFET +2 12V BTS7200-2EPA DAUG
Packaging: Box
Function: Switch
Type: Power Management
Contents: Board(s)
Utilized IC / Part: BTS7200-2EPA
Part Status: Active
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BTS56033LBBAUMA1 Infineon Technologies INFNS27202-1.pdf?t.download=true&u=5oefqw Description: SPOC PLUS 12V SPI POWER CONTROLL
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PEB2260NV3.0 Infineon Technologies Description: SICOFI SIGNAL PROCESSING CODEC F
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PEB2260NV3.0SICOFI Infineon Technologies Description: SICOFI CODEC FILTER
Packaging: Bulk
Part Status: Active
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PEB2260NV3.0-SICOFI Infineon Technologies Description: SICOFI CODEC FILTER
Packaging: Bulk
Part Status: Active
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PEF2260NV3.0 Infineon Technologies Description: SICOFI SIGNAL PROCESSING CODEC F
Packaging: Bulk
auf Bestellung 2198 Stücke:
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ESD205B102ELE6327XTMA1 ESD205B102ELE6327XTMA1 Infineon Technologies ESD205-B1.pdf Description: TVS DIODE 5.5VWM 9V PGTSLP219
Packaging: Bulk
Package / Case: 0402 (1006 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 5pF @ 1MHz
Current - Peak Pulse (10/1000µs): 2.5A (8/20µs)
Voltage - Reverse Standoff (Typ): 5.5V (Max)
Supplier Device Package: PG-TSLP-2-19
Bidirectional Channels: 1
Voltage - Breakdown (Min): 6V
Voltage - Clamping (Max) @ Ipp: 9V (Typ)
Power - Peak Pulse: 30W
Power Line Protection: No
Part Status: Not For New Designs
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1648+0.27 EUR
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IPB032N10N5ATMA1 IPB032N10N5ATMA1 Infineon Technologies Infineon-IPB032N10N5-DS-v02_00-EN.pdf?fileId=5546d4625b3ca4ec015b5c47b25335ca Description: MOSFET N-CH 100V 166A TO263-7
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 166A (Tc)
Rds On (Max) @ Id, Vgs: 3.2mOhm @ 83A, 10V
Power Dissipation (Max): 187W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 125µA
Supplier Device Package: PG-TO263-7
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6970 pF @ 50 V
auf Bestellung 1773 Stücke:
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100+3.26 EUR
500+3.03 EUR
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IRFHM9331TR2PBF IRFHM9331TR2PBF Infineon Technologies irfhm9331pbf.pdf?fileId=5546d462533600a4015356237f7e1f59 Description: MOSFET P-CH 30V 11A 3X3 PQFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 24A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 11A, 20V
Vgs(th) (Max) @ Id: 2.4V @ 25µA
Supplier Device Package: PQFN (3x3)
Part Status: Obsolete
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1543 pF @ 25 V
Produkt ist nicht verfügbar
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BC859-C BC859-C Infineon Technologies INFNS16508-1.pdf?t.download=true&u=5oefqw Description: TRANS PNP 30V 0.1A SOT23-3
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 250 mW
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F423MR12W1M1PB11BPSA1 F423MR12W1M1PB11BPSA1 Infineon Technologies Infineon-F4-23MR12W1M1P_B11-DataSheet-v02_00-EN.pdf?fileId=5546d4626cb27db2016d436f59f37dd3 Description: MOSFET 4N-CH 1200V 50A AG-EASY1B
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 4 N-Channel
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 50A
Input Capacitance (Ciss) (Max) @ Vds: 3.68nF @ 800V
Rds On (Max) @ Id, Vgs: 22.5mOhm @ 50A, 15V
Gate Charge (Qg) (Max) @ Vgs: 124nC @ 15V
Vgs(th) (Max) @ Id: 5.5V @ 20mA
Supplier Device Package: AG-EASY1B-2
Part Status: Obsolete
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F423MR12W1M1B11BOMA1 F423MR12W1M1B11BOMA1 Infineon Technologies Infineon-F4-23MR12W1M1_B11-DS-v02_00-EN.pdf?fileId=5546d462689a790c01690e9d9fb63802 Description: LOW POWER EASY
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Full Bridge
Operating Temperature: -40°C ~ 150°C (TJ)
NTC Thermistor: Yes
Supplier Device Package: AG-EASY1BM-2
IGBT Type: Trench
Current - Collector (Ic) (Max): 50 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 20 mW
Input Capacitance (Cies) @ Vce: 3.68 nF @ 800 V
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62-0258PBF Infineon Technologies Description: MOSFET P-CH 30V 9.2A 8-SO
Produkt ist nicht verfügbar
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ESD207B102ELSE6327XTSA1 ESD207B102ELSE6327XTSA1 Infineon Technologies ESD207-B1-02.pdf Description: TVS DIODE 3.3VWM 8.1VC PGTSSLP23
Packaging: Bulk
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -40°C ~ 125°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 14pF @ 1MHz
Current - Peak Pulse (10/1000µs): 8A (8/20µs)
Voltage - Reverse Standoff (Typ): 3.3V (Max)
Supplier Device Package: PG-TSSLP-2-3
Bidirectional Channels: 1
Voltage - Breakdown (Min): 3.65V
Voltage - Clamping (Max) @ Ipp: 8.1V
Power Line Protection: No
Part Status: Obsolete
auf Bestellung 2200769 Stücke:
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5453+0.093 EUR
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FS25R12KT3BOSA1 FS25R12KT3BOSA1 Infineon Technologies Infineon-FS25R12KT3-DS-v02_01-en_de.pdf?fileId=db3a304412b407950112b431414d53ef Description: IGBT MOD 1200V 40A 145W
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Full Bridge
Operating Temperature: -40°C ~ 125°C
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 25A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 145 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 1.8 nF @ 25 V
Produkt ist nicht verfügbar
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IPG20N04S409ATMA1 IPG20N04S409ATMA1 Infineon Technologies INFNS15593-1.pdf?t.download=true&u=5oefqw Description: MOSFET N-CHANNEL_30/40V
Produkt ist nicht verfügbar
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BCR601XUMA1 BCR601XUMA1 Infineon Technologies Infineon-BCR601-DS-v01_01-EN.pdf?fileId=5546d46268554f4a016855b5d62d0023 Description: IC LED DRVR LIN ANALOG 10MA 8DSO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Number of Outputs: 1
Type: Linear
Applications: LED Lighting
Current - Output / Channel: 10mA
Internal Switch(s): No
Topology: Flyback
Supplier Device Package: PG-DSO-8
Dimming: Analog
Voltage - Supply (Max): 60V
Part Status: Active
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BCR601XUMA1 BCR601XUMA1 Infineon Technologies Infineon-BCR601-DS-v01_01-EN.pdf?fileId=5546d46268554f4a016855b5d62d0023 Description: IC LED DRVR LIN ANALOG 10MA 8DSO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Number of Outputs: 1
Type: Linear
Applications: LED Lighting
Current - Output / Channel: 10mA
Internal Switch(s): No
Topology: Flyback
Supplier Device Package: PG-DSO-8
Dimming: Analog
Voltage - Supply (Max): 60V
Part Status: Active
auf Bestellung 2098 Stücke:
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14+1.27 EUR
20+0.89 EUR
25+0.8 EUR
100+0.7 EUR
250+0.66 EUR
500+0.63 EUR
1000+0.6 EUR
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IPU80R1K4CEBKMA1 IPU80R1K4CEBKMA1 Infineon Technologies Infineon-IPX80R1K4CE-DS-v02_01-en.pdf?fileId=db3a304340155f3d01402f3b471926eb Description: MOSFET N-CH 800V 3.9A TO251-3
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.9A (Tc)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 2.3A, 10V
Power Dissipation (Max): 63W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 240µA
Supplier Device Package: PG-TO251-3
Part Status: Discontinued at Digi-Key
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 570 pF @ 100 V
auf Bestellung 18925 Stücke:
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682+0.68 EUR
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BGSF1717MN26E6327XTSA1 BGSF1717MN26E6327XTSA1 Infineon Technologies BGSF1717MN26.pdf Description: IC RF SWITCH SP7T 2.7GHZ TSNP26
Packaging: Bulk
Package / Case: 26-WFQFN Exposed Pad
Impedance: 50Ohm
Mounting Type: Surface Mount
Circuit: SP7T
RF Type: General Purpose
Voltage - Supply: 1.2V ~ 1.8V
Frequency Range: 100MHz ~ 2.7GHz
Supplier Device Package: PG-TSNP-26-3
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316+1.47 EUR
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TLS810A1LDV33XUMA1 TLS810A1LDV33XUMA1 Infineon Technologies Infineon-TLS810A1LD+V33-DS-v01_10-EN.pdf?fileId=5546d46258fc0bc1015921017a7b3679 Description: IC REG LIN 3.3V 100MA TSON-102
Packaging: Cut Tape (CT)
Package / Case: 10-TFDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount, Wettable Flank
Current - Output: 100mA
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 10 µA
Voltage - Input (Max): 42V
Number of Regulators: 1
Supplier Device Package: PG-TSON-10-2
Voltage - Output (Min/Fixed): 3.3V
Grade: Automotive
Part Status: Active
PSRR: 60dB (100Hz)
Voltage Dropout (Max): 0.65V @ 100mA
Protection Features: Over Current, Over Temperature
Current - Supply (Max): 15 µA
Qualification: AEC-Q100
auf Bestellung 4823 Stücke:
Lieferzeit 10-14 Tag (e)
9+2.09 EUR
12+1.53 EUR
25+1.38 EUR
100+1.23 EUR
250+1.15 EUR
500+1.11 EUR
1000+1.07 EUR
2500+1.03 EUR
Mindestbestellmenge: 9
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IPA60R600E6XKSA1 IPA60R600E6XKSA1 Infineon Technologies IPA60R600E6_2_0.pdf?folderId=db3a3043163797a6011638933eda014b&fileId=db3a304327b8975001281b23402b1aa0 Description: MOSFET N-CH 600V 7.3A TO220-FP
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.3A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 2.4A, 10V
Power Dissipation (Max): 28W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 200µA
Supplier Device Package: PG-TO220-FP
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 20.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 440 pF @ 100 V
auf Bestellung 1105 Stücke:
Lieferzeit 10-14 Tag (e)
438+1.12 EUR
Mindestbestellmenge: 438
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IPA60R520CP IPA60R520CP Infineon Technologies INFNS17418-1.pdf?t.download=true&u=5oefqw Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.8A (Tc)
Rds On (Max) @ Id, Vgs: 520mOhm @ 3.8A, 10V
Power Dissipation (Max): 30W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: PG-TO220-3-111
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 630 pF @ 100 V
auf Bestellung 55486 Stücke:
Lieferzeit 10-14 Tag (e)
270+1.78 EUR
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IPA60R280E6 IPA60R280E6 Infineon Technologies INFN-S-A0004583476-1.pdf?t.download=true&u=5oefqw Description: 600V 0.28OHM N-CHANNEL MOSFET
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13.8A (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 6.5A, 10V
Power Dissipation (Max): 32W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 430µA
Supplier Device Package: PG-TO220-3-111
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 950 pF @ 100 V
Produkt ist nicht verfügbar
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PX3897EDQGG005XUMA1
Hersteller: Infineon Technologies
Description: IC REGULATOR 16VQFN
Produkt ist nicht verfügbar
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ICA32V21X1SA1
Hersteller: Infineon Technologies
Description: CHIP BARE DIE
Produkt ist nicht verfügbar
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IPD65R660CFDAATMA1 Infineon-IPD65R660CFDA-DS-v02_02-EN.pdf?fileId=db3a30433f764301013f7bd7d66028c6
IPD65R660CFDAATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 650V 6A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 660mOhm @ 3.22A, 10V
Power Dissipation (Max): 62.5W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 214.55µA
Supplier Device Package: PG-TO252-3
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 543 pF @ 100 V
Qualification: AEC-Q101
auf Bestellung 4093 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
6+3.41 EUR
10+2.18 EUR
100+1.49 EUR
500+1.19 EUR
1000+1.15 EUR
Mindestbestellmenge: 6
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IPB120N06S403ATMA2 Infineon-I120N06S4_03-DS-v01_00-en.pdf?fileId=db3a30431ff98815012038c634110ccc
IPB120N06S403ATMA2
Hersteller: Infineon Technologies
Description: MOSFET N-CH 60V 120A TO263-3
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 3.2mOhm @ 100A, 10V
Power Dissipation (Max): 167W (Tc)
Vgs(th) (Max) @ Id: 4V @ 120µA
Supplier Device Package: PG-TO263-3-2
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 160 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13150 pF @ 25 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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SPD30N03S2L-20G Infineon-SPD30N03S2L-DS-v01_02-en[1].pdf?fileId=db3a30431b3e89eb011b96e752ea0e08
SPD30N03S2L-20G
Hersteller: Infineon Technologies
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Part Status: Active
auf Bestellung 8367 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
989+0.5 EUR
Mindestbestellmenge: 989
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SPD30N03S2L-07 G Infineon-SPD30N03S2L-DS-v01_02-en[1].pdf?fileId=db3a30431b3e89eb011b96e752ea0e08
SPD30N03S2L-07 G
Hersteller: Infineon Technologies
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 6.7mOhm @ 30A, 10V
Power Dissipation (Max): 136W (Tc)
Vgs(th) (Max) @ Id: 2V @ 85µA
Supplier Device Package: PG-TO252-3-313
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2530 pF @ 25 V
auf Bestellung 1757 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
533+0.93 EUR
Mindestbestellmenge: 533
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BSO130N03MSG INFNS16226-1.pdf?t.download=true&u=5oefqw
BSO130N03MSG
Hersteller: Infineon Technologies
Description: SMALL SIGNAL N-CHANNEL MOSFET
Packaging: Bulk
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Ta)
Rds On (Max) @ Id, Vgs: 13mOhm @ 11.1A, 10V
Power Dissipation (Max): 1.56W (Ta)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-DSO-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 15 V
Produkt ist nicht verfügbar
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S25FL128SAGBHVB00 Infineon-S25FL128S_S25FL256S_128_Mb_(16_MB)_256_Mb_(32_MB)_3.0V_SPI_Flash_Memory-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ecfb6a64a17
S25FL128SAGBHVB00
Hersteller: Infineon Technologies
Description: IC FLASH 128MBIT SPI/QUAD 24BGA
Packaging: Tray
Package / Case: 24-TBGA
Mounting Type: Surface Mount
Memory Size: 128Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 133 MHz
Memory Format: FLASH
Supplier Device Package: 24-BGA (6x8)
Part Status: Active
Memory Interface: SPI - Quad I/O
Memory Organization: 16M x 8
DigiKey Programmable: Not Verified
auf Bestellung 507 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+7.6 EUR
10+6.75 EUR
25+6.44 EUR
40+6.29 EUR
80+6.06 EUR
338+5.63 EUR
Mindestbestellmenge: 3
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S79FL256SDSMFVG01 download
S79FL256SDSMFVG01
Hersteller: Infineon Technologies
Description: IC FLASH 256MBIT SPI/QUAD 16SOIC
Packaging: Tube
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Memory Size: 256Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 80 MHz
Memory Format: FLASH
Supplier Device Package: 16-SOIC
Part Status: Active
Memory Interface: SPI - Quad I/O
Memory Organization: 32M x 8
DigiKey Programmable: Verified
auf Bestellung 2120 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+15.22 EUR
10+13.52 EUR
25+12.89 EUR
50+12.43 EUR
235+11.47 EUR
470+11.06 EUR
705+10.83 EUR
1175+10.55 EUR
Mindestbestellmenge: 2
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D740N40TXPSA1 D740N.pdf
D740N40TXPSA1
Hersteller: Infineon Technologies
Description: DIODE GEN PURP 4KV 750A
Packaging: Bulk
Package / Case: DO-200AB, B-PUK
Mounting Type: Clamp On
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 750A
Operating Temperature - Junction: -40°C ~ 160°C
Voltage - DC Reverse (Vr) (Max): 4000 V
Voltage - Forward (Vf) (Max) @ If: 1.45 V @ 700 A
Current - Reverse Leakage @ Vr: 70 mA @ 4000 V
Produkt ist nicht verfügbar
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TLE4274GV50ATMA2 Infineon-TLE4274-DataSheet-v01_71-EN.pdf?fileId=8ac78c8c93dda25b0194f49872dd00d1
TLE4274GV50ATMA2
Hersteller: Infineon Technologies
Description: IC REG LIN 5V 400MA PG-TO263-3-1
Packaging: Tape & Reel (TR)
Package / Case: TO-263-4, D2PAK (3 Leads + Tab), TO-263AA
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 400mA
Operating Temperature: -40°C ~ 150°C
Output Configuration: Positive
Current - Quiescent (Iq): 220 µA
Voltage - Input (Max): 40V
Number of Regulators: 1
Supplier Device Package: PG-TO263-3-1
Voltage - Output (Min/Fixed): 5V
Grade: Automotive
Part Status: Active
PSRR: 60dB (100Hz)
Voltage Dropout (Max): 0.5V @ 250mA
Protection Features: Over Current, Over Temperature, Reverse Polarity, Short Circuit
Current - Supply (Max): 30 mA
Qualification: AEC-Q100
auf Bestellung 2000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1000+1.58 EUR
2000+1.54 EUR
Mindestbestellmenge: 1000
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BTS740S2XUMA1 Infineon-BTS740S2-DS-v01_00-EN.pdf?fileId=5546d4625a888733015aa390ea280fe0
BTS740S2XUMA1
Hersteller: Infineon Technologies
Description: IC PWR SWITCH N-CHAN 1:1 DSO-20
Features: Status Flag
Packaging: Tape & Reel (TR)
Package / Case: 20-SOIC (0.295", 7.50mm Width)
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 2
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 27mOhm
Input Type: Non-Inverting
Voltage - Load: 5V ~ 34V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 4.9A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-DSO-20
Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, Over Voltage
Grade: Automotive
Part Status: Active
Qualification: AEC-Q100
auf Bestellung 2000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1000+5.8 EUR
2000+5.67 EUR
Mindestbestellmenge: 1000
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BGS16GA14E6327XTSA1 Infineon-BGS16GA14-DS-v03_00-EN.pdf?fileId=5546d46254e133b401552f6be87069f8
BGS16GA14E6327XTSA1
Hersteller: Infineon Technologies
Description: IC RF SWITCH SP6T 3.8GHZ ATSLP14
Packaging: Tape & Reel (TR)
Package / Case: 14-UFQFN Exposed Pad
Mounting Type: Surface Mount
Circuit: SP6T
RF Type: LTE, W-CDMA
Operating Temperature: -30°C ~ 85°C
Voltage - Supply: 3V
Insertion Loss: 0.5dB
Frequency Range: 100MHz ~ 3.8GHz
Test Frequency: 3GHz
Isolation: 33dB
Supplier Device Package: PG-ATSLP-14-8
Produkt ist nicht verfügbar
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TLI4971A120T5E0001XUMA1 Infineon-TLI4971-A120T5-E0001-DataSheet-v01_01-EN.pdf?fileId=5546d462700c0ae6017034d731621b09
TLI4971A120T5E0001XUMA1
Hersteller: Infineon Technologies
Description: CURRENT SENSOR PG-TISON-8-5
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Supplier Device Package: PG-TISON-8-5
Part Status: Active
auf Bestellung 7500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2500+3.9 EUR
Mindestbestellmenge: 2500
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ICE3B1565 INFNS22601-1.pdf?t.download=true&u=5oefqw
ICE3B1565
Hersteller: Infineon Technologies
Description: IC OFFLINE SWITCH FLYBACK 8DIP
Packaging: Bulk
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -25°C ~ 130°C (TJ)
Duty Cycle: 75%
Frequency - Switching: 67kHz
Internal Switch(s): Yes
Voltage - Breakdown: 650V
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 8.5V ~ 21V
Supplier Device Package: PG-DIP-8
Fault Protection: Current Limiting, Open Circuit, Over Load, Over Temperature, Over Voltage
Control Features: Soft Start
Part Status: Active
auf Bestellung 14000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
212+2.13 EUR
Mindestbestellmenge: 212
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TLE9015QUTRXBRGTOBO1
TLE9015QUTRXBRGTOBO1
Hersteller: Infineon Technologies
Description: TLE9015QU_TRX_BRG
Packaging: Bulk
Function: Battery Monitor
Type: Power Management
Utilized IC / Part: TLE9012AQU
Supplied Contents: Board(s)
Primary Attributes: Cell Balancer
Embedded: No
Produkt ist nicht verfügbar
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98-0086PBF
Hersteller: Infineon Technologies
Description: IC GATE DRIVER HALF BRIDGE 8SOIC
Packaging: Tube
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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IRFR3711ZTRPBF irfr3711zpbf.pdf?fileId=5546d462533600a401535631d86620d6
IRFR3711ZTRPBF
Hersteller: Infineon Technologies
Description: MOSFET N-CH 20V 93A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 93A (Tc)
Rds On (Max) @ Id, Vgs: 5.7mOhm @ 15A, 10V
Power Dissipation (Max): 79W (Tc)
Vgs(th) (Max) @ Id: 2.45V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2160 pF @ 10 V
auf Bestellung 11072 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
9+2.02 EUR
11+1.65 EUR
100+1.28 EUR
500+1.09 EUR
1000+0.89 EUR
Mindestbestellmenge: 9
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IPD050N10N5ATMA1 Infineon-IPD050N10N5-DS-v02_01-EN.pdf?fileId=5546d4625b3ca4ec015b615bb7536713
IPD050N10N5ATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 100V 80A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 5mOhm @ 40A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 84µA
Supplier Device Package: PG-TO252-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4700 pF @ 50 V
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2500+1.42 EUR
Mindestbestellmenge: 2500
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IPD050N10N5ATMA1 Infineon-IPD050N10N5-DS-v02_01-EN.pdf?fileId=5546d4625b3ca4ec015b615bb7536713
IPD050N10N5ATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 100V 80A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 5mOhm @ 40A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 84µA
Supplier Device Package: PG-TO252-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4700 pF @ 50 V
auf Bestellung 6416 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5+4.26 EUR
10+2.95 EUR
100+2.04 EUR
500+1.71 EUR
Mindestbestellmenge: 5
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IPA050N10NM5SXKSA1 Infineon-IPA050N10NM5S-DataSheet-v02_01-EN.pdf?fileId=5546d4626cb27db2016d5cfdf4f16e2d
IPA050N10NM5SXKSA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 100V 66A TO220
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 66A (Tc)
Rds On (Max) @ Id, Vgs: 5mOhm @ 33A, 10V
Power Dissipation (Max): 38W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 84µA
Supplier Device Package: PG-TO220 Full Pack
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4700 pF @ 50 V
auf Bestellung 530 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+5.46 EUR
50+2.74 EUR
100+2.47 EUR
500+2.01 EUR
Mindestbestellmenge: 4
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STT2200N18P55XPSA1 Infineon-STT2200N18P55-DataSheet-v03_01-EN.pdf?fileId=5546d46272aa54c00172bc99b5485675
STT2200N18P55XPSA1
Hersteller: Infineon Technologies
Description: THYR / DIODE MODULE DK
auf Bestellung 5 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+1204.56 EUR
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IRF9956TRPBF irf9956pbf.pdf?fileId=5546d462533600a40153561210491dd9
Hersteller: Infineon Technologies
Description: MOSFET 2N-CH 30V 3.5A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 3.5A
Input Capacitance (Ciss) (Max) @ Vds: 190pF @ 15V
Rds On (Max) @ Id, Vgs: 100mOhm @ 2.2A, 10V
Gate Charge (Qg) (Max) @ Vgs: 14nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-SO
Part Status: Obsolete
auf Bestellung 297 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
15+1.25 EUR
17+1.09 EUR
100+0.76 EUR
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XC2785X104F80LABKXUMA1 XC2785x.pdf
XC2785X104F80LABKXUMA1
Hersteller: Infineon Technologies
Description: IC MCU 16BIT 144LQFP
Produkt ist nicht verfügbar
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BSL716SNH6327XTSA1 BSL716SN.pdf
BSL716SNH6327XTSA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 75V 2.5A TSOP-6
Packaging: Bulk
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)
Rds On (Max) @ Id, Vgs: 150mOhm @ 2.5A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 1.8V @ 218µA
Supplier Device Package: PG-TSOP6-6
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 13.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 315 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 38420 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1892+0.24 EUR
Mindestbestellmenge: 1892
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ISP650P06NMXTSA1 Infineon-ISP650P06NM-DS-v02_00-EN.pdf?fileId=5546d46269e1c019016a06cc34e37280
ISP650P06NMXTSA1
Hersteller: Infineon Technologies
Description: MOSFET P-CH 60V 3.7A SOT223-4
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.7A (Ta)
Rds On (Max) @ Id, Vgs: 65mOhm @ 3.7A, 10V
Power Dissipation (Max): 1.8W (Ta), 4.2W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1.037mA
Supplier Device Package: PG-SOT223-4
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 30 V
auf Bestellung 1080 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
7+2.69 EUR
10+1.77 EUR
100+1.3 EUR
500+1.11 EUR
Mindestbestellmenge: 7
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AUIRF4104 IRSDS10905-1.pdf?t.download=true&u=5oefqw
AUIRF4104
Hersteller: Infineon Technologies
Description: MOSFET N-CH 40V 75A TO220
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 5.5mOhm @ 75A, 10V
Power Dissipation (Max): 140W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220
Grade: Automotive
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 650 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
164+2.76 EUR
Mindestbestellmenge: 164
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KP234XTMA1 INFNS15311-1.pdf?t.download=true&u=5oefqw
KP234XTMA1
Hersteller: Infineon Technologies
Description: SENSOR 16.68PSIA 4.7V DSOF8-16
Features: Amplified Output, Temperature Compensated
Packaging: Cut Tape (CT)
Package / Case: 8-SMD Module
Output Type: Analog Voltage
Mounting Type: Surface Mount
Output: 1.33 V ~ 4.7 V
Operating Pressure: 5.8PSI ~ 16.68PSI (40kPa ~ 115kPa)
Pressure Type: Absolute
Accuracy: ±0.652PSI (±4.5kPa)
Operating Temperature: -40°C ~ 125°C
Termination Style: SMD (SMT) Tab
Voltage - Supply: 4.5V ~ 5.5V
Applications: Board Mount
Port Style: No Port
Grade: Automotive
Part Status: Active
Qualification: AEC-Q100
auf Bestellung 1544 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+7.62 EUR
5+6.84 EUR
10+6.55 EUR
25+6.2 EUR
50+5.97 EUR
100+5.75 EUR
500+5.37 EUR
Mindestbestellmenge: 3
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EVALM1CTF610N3TOBO1 Infineon-IM393-M6F-DS-v02_00-EN.pdf?fileId=5546d462696dbf1201699a947c0278da
EVALM1CTF610N3TOBO1
Hersteller: Infineon Technologies
Description: EVAL BOARD FOR IM393-M6F
Packaging: Bulk
Function: Motor Controller/Driver
Type: Power Management
Contents: Board(s)
Utilized IC / Part: IM393-M6F
Supplied Contents: Board(s)
Part Status: Obsolete
auf Bestellung 5 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+210.88 EUR
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IRF5805TRPBF-INF irf5805pbf.pdf?fileId=5546d462533600a4015355e3f3be19ba
Hersteller: Infineon Technologies
Description: IRF5805 - TRANSISTOR
Packaging: Bulk
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.8A (Ta)
Rds On (Max) @ Id, Vgs: 98mOhm @ 3.8A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: Micro6™(TSOP-6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 511 pF @ 25 V
Produkt ist nicht verfügbar
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T6900N95L204A11XPSA1
Hersteller: Infineon Technologies
Description: HIGH POWER THYR / DIO
Packaging: Tray
Part Status: Active
Produkt ist nicht verfügbar
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XMC1403Q064X0200AAXUMA1 Infineon-XMC1400-DS-v01_03-EN.pdf?fileId=5546d46250cc1fdf015110a2596343b2
XMC1403Q064X0200AAXUMA1
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 200KB FLASH 64VQFN
Packaging: Tape & Reel (TR)
Package / Case: 64-VFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 200KB (200K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: A/D 12x12b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V
Connectivity: CANbus, I2C, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, I2S, POR, PWM, WDT
Supplier Device Package: PG-VQFN-64-6
Part Status: Active
Number of I/O: 48
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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XMC1403Q064X0200AAXUMA1 Infineon-XMC1400-DS-v01_03-EN.pdf?fileId=5546d46250cc1fdf015110a2596343b2
XMC1403Q064X0200AAXUMA1
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 200KB FLASH 64VQFN
Packaging: Cut Tape (CT)
Package / Case: 64-VFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 200KB (200K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: A/D 12x12b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V
Connectivity: CANbus, I2C, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, I2S, POR, PWM, WDT
Supplier Device Package: PG-VQFN-64-6
Part Status: Active
Number of I/O: 48
DigiKey Programmable: Not Verified
auf Bestellung 2216 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+5.49 EUR
10+4.14 EUR
25+3.8 EUR
100+3.43 EUR
250+3.25 EUR
500+3.14 EUR
1000+3.05 EUR
Mindestbestellmenge: 4
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ILD1150 INFNS19121-1.pdf?t.download=true&u=5oefqw
ILD1150
Hersteller: Infineon Technologies
Description: LED DRIVER
Packaging: Bulk
Package / Case: 14-LSSOP (0.154", 3.90mm Width) Exposed Pad
Mounting Type: Surface Mount
Number of Outputs: 1
Frequency: 100kHz ~ 500kHz
Type: DC DC Controller
Operating Temperature: -40°C ~ 125°C (TJ)
Applications: Commercial & Industrial Lighting
Internal Switch(s): No
Topology: Flyback, SEPIC, Step-Down (Buck), Step-Up (Boost)
Supplier Device Package: PG-SSOP-14
Dimming: PWM
Voltage - Supply (Min): 4.75V
Voltage - Supply (Max): 45V
Part Status: Active
Produkt ist nicht verfügbar
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SPP15P10PH Infineon-SPP15P10P_H_G-DS-v01_07-en.pdf?fileId=db3a3043321e49940132246d96be5a7e
SPP15P10PH
Hersteller: Infineon Technologies
Description: 15A, 100V, 0.24OHM, P-CHANNEL,
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 240mOhm @ 10.6A, 10V
Power Dissipation (Max): 128W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 1.54mA
Supplier Device Package: PG-TO220-3-1
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1280 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 944 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
507+0.95 EUR
Mindestbestellmenge: 507
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IPDD60R080G7XTMA1 Infineon-IPDD60R080G7-DS-v02_00-EN.pdf?fileId=5546d4626102d35a016170882f757a07
IPDD60R080G7XTMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 600V 29A HDSOP-10
Packaging: Cut Tape (CT)
Package / Case: 10-PowerSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 29A (Tc)
Rds On (Max) @ Id, Vgs: 80mOhm @ 9.7A, 10V
Power Dissipation (Max): 174W (Tc)
Vgs(th) (Max) @ Id: 4V @ 490µA
Supplier Device Package: PG-HDSOP-10-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1640 pF @ 400 V
auf Bestellung 2376 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+6.09 EUR
10+5.27 EUR
100+5.1 EUR
500+4.81 EUR
Mindestbestellmenge: 3
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BTS72002EPADAUGHBRDTOBO1 Infineon-Customer_evaluation_kit%20_description-UserManual-v01_01-EN.pdf?fileId=5546d4626b2d8e69016bac9ebb6b24c7
BTS72002EPADAUGHBRDTOBO1
Hersteller: Infineon Technologies
Description: PROFET +2 12V BTS7200-2EPA DAUG
Packaging: Box
Function: Switch
Type: Power Management
Contents: Board(s)
Utilized IC / Part: BTS7200-2EPA
Part Status: Active
auf Bestellung 6 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+86.45 EUR
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BTS56033LBBAUMA1 INFNS27202-1.pdf?t.download=true&u=5oefqw
Hersteller: Infineon Technologies
Description: SPOC PLUS 12V SPI POWER CONTROLL
auf Bestellung 67782 Stücke:
Lieferzeit 10-14 Tag (e)
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PEB2260NV3.0
Hersteller: Infineon Technologies
Description: SICOFI SIGNAL PROCESSING CODEC F
auf Bestellung 14183 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
31+18.14 EUR
Mindestbestellmenge: 31
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PEB2260NV3.0SICOFI
Hersteller: Infineon Technologies
Description: SICOFI CODEC FILTER
Packaging: Bulk
Part Status: Active
auf Bestellung 31000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
28+19.36 EUR
Mindestbestellmenge: 28
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PEB2260NV3.0-SICOFI
Hersteller: Infineon Technologies
Description: SICOFI CODEC FILTER
Packaging: Bulk
Part Status: Active
auf Bestellung 2350 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
28+19.36 EUR
Mindestbestellmenge: 28
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PEF2260NV3.0
Hersteller: Infineon Technologies
Description: SICOFI SIGNAL PROCESSING CODEC F
Packaging: Bulk
auf Bestellung 2198 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
19+27.09 EUR
Mindestbestellmenge: 19
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ESD205B102ELE6327XTMA1 ESD205-B1.pdf
ESD205B102ELE6327XTMA1
Hersteller: Infineon Technologies
Description: TVS DIODE 5.5VWM 9V PGTSLP219
Packaging: Bulk
Package / Case: 0402 (1006 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 5pF @ 1MHz
Current - Peak Pulse (10/1000µs): 2.5A (8/20µs)
Voltage - Reverse Standoff (Typ): 5.5V (Max)
Supplier Device Package: PG-TSLP-2-19
Bidirectional Channels: 1
Voltage - Breakdown (Min): 6V
Voltage - Clamping (Max) @ Ipp: 9V (Typ)
Power - Peak Pulse: 30W
Power Line Protection: No
Part Status: Not For New Designs
auf Bestellung 87516 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1648+0.27 EUR
Mindestbestellmenge: 1648
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IPB032N10N5ATMA1 Infineon-IPB032N10N5-DS-v02_00-EN.pdf?fileId=5546d4625b3ca4ec015b5c47b25335ca
IPB032N10N5ATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 100V 166A TO263-7
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 166A (Tc)
Rds On (Max) @ Id, Vgs: 3.2mOhm @ 83A, 10V
Power Dissipation (Max): 187W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 125µA
Supplier Device Package: PG-TO263-7
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6970 pF @ 50 V
auf Bestellung 1773 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+6.95 EUR
10+4.6 EUR
100+3.26 EUR
500+3.03 EUR
Mindestbestellmenge: 3
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IRFHM9331TR2PBF irfhm9331pbf.pdf?fileId=5546d462533600a4015356237f7e1f59
IRFHM9331TR2PBF
Hersteller: Infineon Technologies
Description: MOSFET P-CH 30V 11A 3X3 PQFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 24A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 11A, 20V
Vgs(th) (Max) @ Id: 2.4V @ 25µA
Supplier Device Package: PQFN (3x3)
Part Status: Obsolete
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1543 pF @ 25 V
Produkt ist nicht verfügbar
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BC859-C INFNS16508-1.pdf?t.download=true&u=5oefqw
BC859-C
Hersteller: Infineon Technologies
Description: TRANS PNP 30V 0.1A SOT23-3
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 250 mW
auf Bestellung 26800 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
13172+0.034 EUR
Mindestbestellmenge: 13172
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F423MR12W1M1PB11BPSA1 Infineon-F4-23MR12W1M1P_B11-DataSheet-v02_00-EN.pdf?fileId=5546d4626cb27db2016d436f59f37dd3
F423MR12W1M1PB11BPSA1
Hersteller: Infineon Technologies
Description: MOSFET 4N-CH 1200V 50A AG-EASY1B
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 4 N-Channel
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 50A
Input Capacitance (Ciss) (Max) @ Vds: 3.68nF @ 800V
Rds On (Max) @ Id, Vgs: 22.5mOhm @ 50A, 15V
Gate Charge (Qg) (Max) @ Vgs: 124nC @ 15V
Vgs(th) (Max) @ Id: 5.5V @ 20mA
Supplier Device Package: AG-EASY1B-2
Part Status: Obsolete
auf Bestellung 3 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+234.33 EUR
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F423MR12W1M1B11BOMA1 Infineon-F4-23MR12W1M1_B11-DS-v02_00-EN.pdf?fileId=5546d462689a790c01690e9d9fb63802
F423MR12W1M1B11BOMA1
Hersteller: Infineon Technologies
Description: LOW POWER EASY
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Full Bridge
Operating Temperature: -40°C ~ 150°C (TJ)
NTC Thermistor: Yes
Supplier Device Package: AG-EASY1BM-2
IGBT Type: Trench
Current - Collector (Ic) (Max): 50 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 20 mW
Input Capacitance (Cies) @ Vce: 3.68 nF @ 800 V
auf Bestellung 1 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+250.61 EUR
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62-0258PBF
Hersteller: Infineon Technologies
Description: MOSFET P-CH 30V 9.2A 8-SO
Produkt ist nicht verfügbar
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ESD207B102ELSE6327XTSA1 ESD207-B1-02.pdf
ESD207B102ELSE6327XTSA1
Hersteller: Infineon Technologies
Description: TVS DIODE 3.3VWM 8.1VC PGTSSLP23
Packaging: Bulk
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -40°C ~ 125°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 14pF @ 1MHz
Current - Peak Pulse (10/1000µs): 8A (8/20µs)
Voltage - Reverse Standoff (Typ): 3.3V (Max)
Supplier Device Package: PG-TSSLP-2-3
Bidirectional Channels: 1
Voltage - Breakdown (Min): 3.65V
Voltage - Clamping (Max) @ Ipp: 8.1V
Power Line Protection: No
Part Status: Obsolete
auf Bestellung 2200769 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5453+0.093 EUR
Mindestbestellmenge: 5453
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FS25R12KT3BOSA1 Infineon-FS25R12KT3-DS-v02_01-en_de.pdf?fileId=db3a304412b407950112b431414d53ef
FS25R12KT3BOSA1
Hersteller: Infineon Technologies
Description: IGBT MOD 1200V 40A 145W
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Full Bridge
Operating Temperature: -40°C ~ 125°C
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 25A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 145 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 1.8 nF @ 25 V
Produkt ist nicht verfügbar
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IPG20N04S409ATMA1 INFNS15593-1.pdf?t.download=true&u=5oefqw
IPG20N04S409ATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CHANNEL_30/40V
Produkt ist nicht verfügbar
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BCR601XUMA1 Infineon-BCR601-DS-v01_01-EN.pdf?fileId=5546d46268554f4a016855b5d62d0023
BCR601XUMA1
Hersteller: Infineon Technologies
Description: IC LED DRVR LIN ANALOG 10MA 8DSO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Number of Outputs: 1
Type: Linear
Applications: LED Lighting
Current - Output / Channel: 10mA
Internal Switch(s): No
Topology: Flyback
Supplier Device Package: PG-DSO-8
Dimming: Analog
Voltage - Supply (Max): 60V
Part Status: Active
Produkt ist nicht verfügbar
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BCR601XUMA1 Infineon-BCR601-DS-v01_01-EN.pdf?fileId=5546d46268554f4a016855b5d62d0023
BCR601XUMA1
Hersteller: Infineon Technologies
Description: IC LED DRVR LIN ANALOG 10MA 8DSO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Number of Outputs: 1
Type: Linear
Applications: LED Lighting
Current - Output / Channel: 10mA
Internal Switch(s): No
Topology: Flyback
Supplier Device Package: PG-DSO-8
Dimming: Analog
Voltage - Supply (Max): 60V
Part Status: Active
auf Bestellung 2098 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
14+1.27 EUR
20+0.89 EUR
25+0.8 EUR
100+0.7 EUR
250+0.66 EUR
500+0.63 EUR
1000+0.6 EUR
Mindestbestellmenge: 14
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IPU80R1K4CEBKMA1 Infineon-IPX80R1K4CE-DS-v02_01-en.pdf?fileId=db3a304340155f3d01402f3b471926eb
IPU80R1K4CEBKMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 800V 3.9A TO251-3
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.9A (Tc)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 2.3A, 10V
Power Dissipation (Max): 63W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 240µA
Supplier Device Package: PG-TO251-3
Part Status: Discontinued at Digi-Key
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 570 pF @ 100 V
auf Bestellung 18925 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
682+0.68 EUR
Mindestbestellmenge: 682
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BGSF1717MN26E6327XTSA1 BGSF1717MN26.pdf
BGSF1717MN26E6327XTSA1
Hersteller: Infineon Technologies
Description: IC RF SWITCH SP7T 2.7GHZ TSNP26
Packaging: Bulk
Package / Case: 26-WFQFN Exposed Pad
Impedance: 50Ohm
Mounting Type: Surface Mount
Circuit: SP7T
RF Type: General Purpose
Voltage - Supply: 1.2V ~ 1.8V
Frequency Range: 100MHz ~ 2.7GHz
Supplier Device Package: PG-TSNP-26-3
auf Bestellung 3984 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
316+1.47 EUR
Mindestbestellmenge: 316
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TLS810A1LDV33XUMA1 Infineon-TLS810A1LD+V33-DS-v01_10-EN.pdf?fileId=5546d46258fc0bc1015921017a7b3679
TLS810A1LDV33XUMA1
Hersteller: Infineon Technologies
Description: IC REG LIN 3.3V 100MA TSON-102
Packaging: Cut Tape (CT)
Package / Case: 10-TFDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount, Wettable Flank
Current - Output: 100mA
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 10 µA
Voltage - Input (Max): 42V
Number of Regulators: 1
Supplier Device Package: PG-TSON-10-2
Voltage - Output (Min/Fixed): 3.3V
Grade: Automotive
Part Status: Active
PSRR: 60dB (100Hz)
Voltage Dropout (Max): 0.65V @ 100mA
Protection Features: Over Current, Over Temperature
Current - Supply (Max): 15 µA
Qualification: AEC-Q100
auf Bestellung 4823 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
9+2.09 EUR
12+1.53 EUR
25+1.38 EUR
100+1.23 EUR
250+1.15 EUR
500+1.11 EUR
1000+1.07 EUR
2500+1.03 EUR
Mindestbestellmenge: 9
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IPA60R600E6XKSA1 IPA60R600E6_2_0.pdf?folderId=db3a3043163797a6011638933eda014b&fileId=db3a304327b8975001281b23402b1aa0
IPA60R600E6XKSA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 600V 7.3A TO220-FP
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.3A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 2.4A, 10V
Power Dissipation (Max): 28W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 200µA
Supplier Device Package: PG-TO220-FP
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 20.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 440 pF @ 100 V
auf Bestellung 1105 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
438+1.12 EUR
Mindestbestellmenge: 438
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IPA60R520CP INFNS17418-1.pdf?t.download=true&u=5oefqw
IPA60R520CP
Hersteller: Infineon Technologies
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.8A (Tc)
Rds On (Max) @ Id, Vgs: 520mOhm @ 3.8A, 10V
Power Dissipation (Max): 30W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: PG-TO220-3-111
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 630 pF @ 100 V
auf Bestellung 55486 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
270+1.78 EUR
Mindestbestellmenge: 270
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IPA60R280E6 INFN-S-A0004583476-1.pdf?t.download=true&u=5oefqw
IPA60R280E6
Hersteller: Infineon Technologies
Description: 600V 0.28OHM N-CHANNEL MOSFET
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13.8A (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 6.5A, 10V
Power Dissipation (Max): 32W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 430µA
Supplier Device Package: PG-TO220-3-111
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 950 pF @ 100 V
Produkt ist nicht verfügbar
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