Produkte > INFINEON TECHNOLOGIES > Alle Produkte des Herstellers INFINEON TECHNOLOGIES (124698) > Seite 359 nach 2079
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BAR161E6327HTSA1 | Infineon Technologies |
Description: RF DIODE PIN 100V 250MW PG-SOT23Power Dissipation (Max): 250 mW Current - Max: 140 mA Part Status: Obsolete Supplier Device Package: PG-SOT23 Voltage - Peak Reverse (Max): 100V Resistance @ If, F: 12Ohm @ 10mA, 100MHz Capacitance @ Vr, F: 0.5pF @ 50V, 1MHz Operating Temperature: 150°C (TJ) Diode Type: PIN - 1 Pair Common Anode Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Bulk |
auf Bestellung 66000 Stücke: Lieferzeit 10-14 Tag (e) |
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BSC028N06NSSCATMA1 | Infineon Technologies |
Description: MOSFET N-CH 60V 137A WSONPackaging: Tape & Reel (TR) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 137A (Tc) Rds On (Max) @ Id, Vgs: 2.8mOhm @ 50A, 10V Power Dissipation (Max): 3W (Ta), 100W (Tc) Vgs(th) (Max) @ Id: 3.3V @ 50µA Supplier Device Package: PG-WSON-8-2 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3375 pF @ 30 V |
auf Bestellung 8000 Stücke: Lieferzeit 10-14 Tag (e) |
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BSC028N06NSSCATMA1 | Infineon Technologies |
Description: MOSFET N-CH 60V 137A WSONPackaging: Cut Tape (CT) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 137A (Tc) Rds On (Max) @ Id, Vgs: 2.8mOhm @ 50A, 10V Power Dissipation (Max): 3W (Ta), 100W (Tc) Vgs(th) (Max) @ Id: 3.3V @ 50µA Supplier Device Package: PG-WSON-8-2 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3375 pF @ 30 V |
auf Bestellung 10546 Stücke: Lieferzeit 10-14 Tag (e) |
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XMC1404Q048X0200AAXUMA1 | Infineon Technologies |
Description: IC MCU 32BIT 200KB FLASH 48VQFNPackaging: Tape & Reel (TR) Package / Case: 48-VFQFN Exposed Pad Mounting Type: Surface Mount Speed: 48MHz Program Memory Size: 200KB (200K x 8) RAM Size: 16K x 8 Operating Temperature: -40°C ~ 105°C (TA) Oscillator Type: Internal Program Memory Type: FLASH Core Processor: ARM® Cortex®-M0 Data Converters: A/D 12x12b Core Size: 32-Bit Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V Connectivity: CANbus, I2C, LINbus, SPI, UART/USART Peripherals: Brown-out Detect/Reset, I2S, LED, POR, PWM, WDT Supplier Device Package: PG-VQFN-48-73 Part Status: Active Number of I/O: 34 DigiKey Programmable: Not Verified |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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XMC1404Q048X0200AAXUMA1 | Infineon Technologies |
Description: IC MCU 32BIT 200KB FLASH 48VQFNPackaging: Cut Tape (CT) Package / Case: 48-VFQFN Exposed Pad Mounting Type: Surface Mount Speed: 48MHz Program Memory Size: 200KB (200K x 8) RAM Size: 16K x 8 Operating Temperature: -40°C ~ 105°C (TA) Oscillator Type: Internal Program Memory Type: FLASH Core Processor: ARM® Cortex®-M0 Data Converters: A/D 12x12b Core Size: 32-Bit Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V Connectivity: CANbus, I2C, LINbus, SPI, UART/USART Peripherals: Brown-out Detect/Reset, I2S, LED, POR, PWM, WDT Supplier Device Package: PG-VQFN-48-73 Part Status: Active Number of I/O: 34 DigiKey Programmable: Not Verified |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| SIDC42D120E6X1SA4 | Infineon Technologies |
Description: DIODE GP 1.2KV 50A WAFERPackaging: Bulk Package / Case: Die Mounting Type: Surface Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Current - Average Rectified (Io): 50A Supplier Device Package: Sawn on foil Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 1.9 V @ 50 A Current - Reverse Leakage @ Vr: 27 µA @ 1200 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| SIDC42D120F6X1SA3 | Infineon Technologies |
Description: DIODE GP 1.2KV 50A WAFERPackaging: Bulk Package / Case: Die Mounting Type: Surface Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Current - Average Rectified (Io): 50A Supplier Device Package: Sawn on foil Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 2.1 V @ 50 A Current - Reverse Leakage @ Vr: 27 µA @ 1200 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| 111-4181PBF | Infineon Technologies | Description: IC GATE DRIVER SMD |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
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TLE9183QKXUMA1 | Infineon Technologies |
Description: IC GATE DRVR HALF-BRIDGE 64LQFPPackaging: Tape & Reel (TR) Package / Case: 64-LQFP Exposed Pad Mounting Type: Surface Mount Supplier Device Package: PG-LQFP-64-28 Channel Type: 3-Phase Driven Configuration: Half-Bridge Number of Drivers: 3 Gate Type: MOSFET (N-Channel) Grade: Automotive DigiKey Programmable: Not Verified Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1900 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| BCR 521 E6327 | Infineon Technologies |
Description: BIPOLAR DIGITAL TRANSISTOR |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
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BCW60DE6327 | Infineon Technologies |
Description: TRANS NPN 32V 0.1A SOT23Power - Max: 330 mW Voltage - Collector Emitter Breakdown (Max): 32 V Current - Collector (Ic) (Max): 100 mA Part Status: Active Supplier Device Package: PG-SOT23 Frequency - Transition: 250MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 380 @ 2mA, 5V Current - Collector Cutoff (Max): 20nA (ICBO) Vce Saturation (Max) @ Ib, Ic: 550mV @ 1.25mA, 50mA Operating Temperature: 150°C (TJ) Transistor Type: NPN Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Bulk |
auf Bestellung 13852 Stücke: Lieferzeit 10-14 Tag (e) |
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BCW 60FF E6327 | Infineon Technologies |
Description: TRANS NPN 32V 0.1A SOT23Power - Max: 330 mW Voltage - Collector Emitter Breakdown (Max): 32 V Current - Collector (Ic) (Max): 100 mA Part Status: Active Supplier Device Package: PG-SOT23 Frequency - Transition: 250MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 2mA, 5V Current - Collector Cutoff (Max): 20nA (ICBO) Vce Saturation (Max) @ Ib, Ic: 550mV @ 1.25mA, 50mA Operating Temperature: 150°C (TJ) Transistor Type: NPN Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Bulk |
auf Bestellung 45000 Stücke: Lieferzeit 10-14 Tag (e) |
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BCW 60D E6327 | Infineon Technologies |
Description: TRANS NPN 32V 0.1A SOT23Power - Max: 330 mW Voltage - Collector Emitter Breakdown (Max): 32 V Current - Collector (Ic) (Max): 100 mA Part Status: Active Supplier Device Package: PG-SOT23 Frequency - Transition: 250MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 380 @ 2mA, 5V Current - Collector Cutoff (Max): 20nA (ICBO) Vce Saturation (Max) @ Ib, Ic: 550mV @ 1.25mA, 50mA Operating Temperature: 150°C (TJ) Transistor Type: NPN Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Bulk |
auf Bestellung 30000 Stücke: Lieferzeit 10-14 Tag (e) |
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BCW60FN | Infineon Technologies |
Description: TRANS NPN 32V 0.1A SOT23-3Power - Max: 330 mW Voltage - Collector Emitter Breakdown (Max): 32 V Current - Collector (Ic) (Max): 100 mA Part Status: Active Supplier Device Package: PG-SOT23-3-1 Frequency - Transition: 250MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 2mA, 5V Current - Collector Cutoff (Max): 20nA (ICBO) Vce Saturation (Max) @ Ib, Ic: 550mV @ 1.25mA, 50mA Operating Temperature: 150°C (TJ) Transistor Type: NPN Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Bulk |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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BCW60FE6327 | Infineon Technologies |
Description: SMALL SIGNAL BIPOLAR TRANSISTORPower - Max: 330 mW Voltage - Collector Emitter Breakdown (Max): 32 V Current - Collector (Ic) (Max): 100 mA Part Status: Active Supplier Device Package: PG-SOT23-3-1 Frequency - Transition: 250MHz Current - Collector Cutoff (Max): 20nA (ICBO) Vce Saturation (Max) @ Ib, Ic: 550mV @ 1.25mA, 50mA Operating Temperature: 150°C (TJ) Transistor Type: NPN Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Bulk |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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EVAL1ED44175N01BTOBO1 | Infineon Technologies |
Description: EVAL-1ED44175N01BPart Status: Active Embedded: Yes Supplied Contents: Board(s) Utilized IC / Part: 1ED44175N01B Type: Power Management Function: Gate Driver Packaging: Bulk |
auf Bestellung 3 Stücke: Lieferzeit 10-14 Tag (e) |
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| BSM35GD120DN2BOSA1 | Infineon Technologies |
Description: IGBT MODULEInput Capacitance (Cies) @ Vce: 2 nF @ 25 V Current - Collector Cutoff (Max): 1 mA Power - Max: 280 W Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector (Ic) (Max): 50 A Part Status: Active Supplier Device Package: AG-ECONOPACK 2K NTC Thermistor: No Vce(on) (Max) @ Vge, Ic: 3.2V @ 15V, 35A Operating Temperature: 150°C (TJ) Configuration: Three Phase Inverter Input: Standard Mounting Type: Chassis Mount Package / Case: Module Packaging: Bulk |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| PEF33008HLV2.1 | Infineon Technologies |
Description: VINETIC VOICE ACCESS SOLUTION Packaging: Bulk Part Status: Active |
auf Bestellung 6000 Stücke: Lieferzeit 10-14 Tag (e) |
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IPW60R280C6FKSA1 | Infineon Technologies |
Description: MOSFET N-CH 600V 13.8A TO247-3Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Packaging: Bulk Input Capacitance (Ciss) (Max) @ Vds: 950 pF @ 100 V Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V Drain to Source Voltage (Vdss): 600 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: PG-TO247-3-1 Vgs(th) (Max) @ Id: 3.5V @ 430µA Power Dissipation (Max): 104W (Tc) Rds On (Max) @ Id, Vgs: 280mOhm @ 6.5A, 10V Current - Continuous Drain (Id) @ 25°C: 13.8A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) |
auf Bestellung 14160 Stücke: Lieferzeit 10-14 Tag (e) |
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IPW60R280C6 | Infineon Technologies |
Description: MOSFET N-CH 600V 13.8A TO247-3Input Capacitance (Ciss) (Max) @ Vds: 950 pF @ 100 V Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V Drain to Source Voltage (Vdss): 600 V Vgs (Max): ±20V Part Status: Active Supplier Device Package: PG-TO247-3-41 Vgs(th) (Max) @ Id: 3.5V @ 430µA Power Dissipation (Max): 104W (Tc) Rds On (Max) @ Id, Vgs: 280mOhm @ 6.5A, 10V Current - Continuous Drain (Id) @ 25°C: 13.8A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Packaging: Bulk |
auf Bestellung 210 Stücke: Lieferzeit 10-14 Tag (e) |
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IPW60R024P7XKSA1 | Infineon Technologies |
Description: MOSFET N-CH 650V 101A TO247-3-41Input Capacitance (Ciss) (Max) @ Vds: 7144 pF @ 400 V Gate Charge (Qg) (Max) @ Vgs: 164 nC @ 10 V Drain to Source Voltage (Vdss): 650 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: PG-TO247-3-41 Vgs(th) (Max) @ Id: 4V @ 2.03mA Power Dissipation (Max): 291W (Tc) Rds On (Max) @ Id, Vgs: 24mOhm @ 42.4A, 10V Current - Continuous Drain (Id) @ 25°C: 101A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Packaging: Tube |
auf Bestellung 514 Stücke: Lieferzeit 10-14 Tag (e) |
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| TT270N16KOFHPSA1 | Infineon Technologies |
Description: SCR MODULE 1.6KV 450A MODULE |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
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TLE42694GXUMA2 | Infineon Technologies |
Description: IC REG LINEAR 5V 100MA 8DSOQualification: AEC-Q100 Grade: Automotive Packaging: Cut Tape (CT) Current - Supply (Max): 8 mA Protection Features: Over Current, Over Temperature, Reverse Polarity Voltage Dropout (Max): 0.5V @ 100mA PSRR: 70dB (100Hz) Part Status: Active Control Features: Reset Voltage - Output (Min/Fixed): 5V Supplier Device Package: PG-DSO-8 Number of Regulators: 1 Voltage - Input (Max): 45V Current - Quiescent (Iq): 280 µA Output Configuration: Positive Operating Temperature: -40°C ~ 150°C Current - Output: 100mA Mounting Type: Surface Mount Output Type: Fixed Package / Case: 8-SOIC (0.154", 3.90mm Width) |
auf Bestellung 4765 Stücke: Lieferzeit 10-14 Tag (e) |
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ICL8001G | Infineon Technologies |
Description: FLYBACK AND PFC LED CONTROLLER |
auf Bestellung 237659 Stücke: Lieferzeit 10-14 Tag (e) |
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ICL8002G | Infineon Technologies |
Description: IC LED DRIVER OFFL PWM 8DSOVoltage - Supply (Max): 26V Voltage - Supply (Min): 9.8V Dimming: PWM Supplier Device Package: PG-DSO-8 Topology: Flyback, Step-Down (Buck) Internal Switch(s): No Applications: LED Lighting Operating Temperature: -40°C ~ 150°C (TJ) Type: AC DC Offline Switcher Number of Outputs: 1 Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Bulk |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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BCW68HE6327 | Infineon Technologies |
Description: SMALL SIGNAL BIPOLAR TRANSISTOR |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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ICE3AR10080JZTXKLA1 | Infineon Technologies |
Description: 1.1A, 113KHZ SWITCHING FREQ-MAXPackaging: Bulk Package / Case: 8-DIP (0.300", 7.62mm), 7 Leads Mounting Type: Through Hole Operating Temperature: -20°C ~ 150°C (TJ) Duty Cycle: 75% Frequency - Switching: 100kHz Internal Switch(s): Yes Voltage - Breakdown: 800V Output Isolation: Isolated Topology: Flyback Voltage - Supply (Vcc/Vdd): 10.5V ~ 27V Supplier Device Package: PG-DIP-7-4 Fault Protection: Current Limiting, Open Loop, Over Load, Over Temperature, Over Voltage, UVLO Voltage - Start Up: 17 V Control Features: Soft Start Part Status: Active Power (Watts): 22 W |
auf Bestellung 500 Stücke: Lieferzeit 10-14 Tag (e) |
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ICE3A2065I | Infineon Technologies |
Description: IC OFFLINE SWITCH FLYBACK TO220Power (Watts): 102 W Part Status: Discontinued at Digi-Key Control Features: Soft Start Voltage - Start Up: 15 V Fault Protection: Current Limiting, Open Loop, Over Load, Over Temperature, Over Voltage Supplier Device Package: PG-TO220-6-46 Voltage - Supply (Vcc/Vdd): 8.5V ~ 21V Topology: Flyback Output Isolation: Isolated Voltage - Breakdown: 650V Internal Switch(s): Yes Frequency - Switching: 100kHz Duty Cycle: 72% Operating Temperature: -25°C ~ 130°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-6 Formed Leads Packaging: Bulk |
auf Bestellung 2000 Stücke: Lieferzeit 10-14 Tag (e) |
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ICE3A0565 | Infineon Technologies |
Description: 100KHZ SWITCHING FREQ-MAXPackaging: Bulk Part Status: Active |
Produkt ist nicht verfügbar |
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SMBTA14E6327HTSA1872 | Infineon Technologies |
Description: TRANS NPN DARL 30V 0.3A SOT23Packaging: Bulk Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN - Darlington Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1.5V @ 100µA, 100mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 20000 @ 100mA, 5V Frequency - Transition: 125MHz Supplier Device Package: PG-SOT23 Part Status: Active Current - Collector (Ic) (Max): 300 mA Voltage - Collector Emitter Breakdown (Max): 30 V Power - Max: 330 mW |
Produkt ist nicht verfügbar |
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SMBTA14E6327 | Infineon Technologies |
Description: TRANSISTOR DARLINGTON NPN 30VPackaging: Bulk Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN - Darlington Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1.5V @ 100µA, 100mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 20000 @ 100mA, 5V Frequency - Transition: 125MHz Supplier Device Package: PG-SOT23-3-1 Grade: Automotive Part Status: Active Current - Collector (Ic) (Max): 300 mA Voltage - Collector Emitter Breakdown (Max): 30 V Power - Max: 330 mW Qualification: AEC-Q101 |
auf Bestellung 210081 Stücke: Lieferzeit 10-14 Tag (e) |
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SMBTA14E6327XT | Infineon Technologies |
Description: TRANS NPN DARL 30V 0.3A SOT23Packaging: Bulk Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN - Darlington Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1.5V @ 100µA, 100mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 20000 @ 100mA, 5V Frequency - Transition: 125MHz Supplier Device Package: PG-SOT23 Part Status: Active Current - Collector (Ic) (Max): 300 mA Voltage - Collector Emitter Breakdown (Max): 30 V Power - Max: 330 mW |
auf Bestellung 30000 Stücke: Lieferzeit 10-14 Tag (e) |
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2ED21814S06JXUMA1 | Infineon Technologies |
Description: IC GATE DRVR HI/LOW SIDE 14SOICPackaging: Cut Tape (CT) Package / Case: 14-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C (TA) Voltage - Supply: 10V ~ 20V Input Type: Non-Inverting High Side Voltage - Max (Bootstrap): 650 V Supplier Device Package: PG-DSO-14 Rise / Fall Time (Typ): 15ns, 15ns Channel Type: Independent Driven Configuration: High-Side, Low-Side Number of Drivers: 2 Gate Type: IGBT, MOSFET (N-Channel) Logic Voltage - VIL, VIH: 1.1V, 1.7V Current - Peak Output (Source, Sink): 2.5A, 2.5A Part Status: Active DigiKey Programmable: Not Verified |
auf Bestellung 2252 Stücke: Lieferzeit 10-14 Tag (e) |
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2ED2182S06FXUMA1 | Infineon Technologies |
Description: IC GATE DRVR HALF-BRIDGE 8SOICChannel Type: Synchronous Rise / Fall Time (Typ): 15ns, 15ns Supplier Device Package: PG-DSO-8-69 High Side Voltage - Max (Bootstrap): 650 V Input Type: Non-Inverting Voltage - Supply: 10V ~ 20V Operating Temperature: -40°C ~ 125°C (TA) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Tape & Reel (TR) DigiKey Programmable: Not Verified Part Status: Active Current - Peak Output (Source, Sink): 2.5A, 2.5A Logic Voltage - VIL, VIH: 1.1V, 1.7V Gate Type: IGBT, MOSFET (N-Channel) Number of Drivers: 1 Driven Configuration: Half-Bridge |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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2ED2182S06FXUMA1 | Infineon Technologies |
Description: IC GATE DRVR HALF-BRIDGE 8SOICPart Status: Active Current - Peak Output (Source, Sink): 2.5A, 2.5A DigiKey Programmable: Not Verified Logic Voltage - VIL, VIH: 1.1V, 1.7V Gate Type: IGBT, MOSFET (N-Channel) Number of Drivers: 1 Driven Configuration: Half-Bridge Channel Type: Synchronous Rise / Fall Time (Typ): 15ns, 15ns Supplier Device Package: PG-DSO-8-69 High Side Voltage - Max (Bootstrap): 650 V Input Type: Non-Inverting Voltage - Supply: 10V ~ 20V Operating Temperature: -40°C ~ 125°C (TA) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Cut Tape (CT) |
auf Bestellung 154 Stücke: Lieferzeit 10-14 Tag (e) |
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2ED2181S06FXUMA1 | Infineon Technologies |
Description: IC GATE DRVR HI/LOW SIDE 8SOICDigiKey Programmable: Not Verified Part Status: Active Current - Peak Output (Source, Sink): 2.5A, 2.5A Logic Voltage - VIL, VIH: 1.1V, 1.7V Gate Type: IGBT, MOSFET (N-Channel) Number of Drivers: 1 Driven Configuration: High-Side or Low-Side Channel Type: Synchronous Rise / Fall Time (Typ): 15ns, 15ns Supplier Device Package: PG-DSO-8-53 High Side Voltage - Max (Bootstrap): 650 V Input Type: Non-Inverting Voltage - Supply: 10V ~ 20V Operating Temperature: -40°C ~ 125°C (TA) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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2ED2181S06FXUMA1 | Infineon Technologies |
Description: IC GATE DRVR HI/LOW SIDE 8SOICDigiKey Programmable: Not Verified Part Status: Active Current - Peak Output (Source, Sink): 2.5A, 2.5A Logic Voltage - VIL, VIH: 1.1V, 1.7V Gate Type: IGBT, MOSFET (N-Channel) Number of Drivers: 1 Driven Configuration: High-Side or Low-Side Channel Type: Synchronous Rise / Fall Time (Typ): 15ns, 15ns Supplier Device Package: PG-DSO-8-53 High Side Voltage - Max (Bootstrap): 650 V Input Type: Non-Inverting Voltage - Supply: 10V ~ 20V Operating Temperature: -40°C ~ 125°C (TA) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Cut Tape (CT) |
auf Bestellung 2637 Stücke: Lieferzeit 10-14 Tag (e) |
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2ED2183S06FXUMA1 | Infineon Technologies |
Description: IC GATE DRVR HALF-BRIDGE 8SOICPackaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C (TA) Voltage - Supply: 10V ~ 20V Input Type: Non-Inverting High Side Voltage - Max (Bootstrap): 650 V Supplier Device Package: PG-DSO-8-53 Rise / Fall Time (Typ): 15ns, 15ns Channel Type: Synchronous Driven Configuration: Half-Bridge Number of Drivers: 2 Gate Type: IGBT, MOSFET (N-Channel) Logic Voltage - VIL, VIH: 1.1V, 1.7V Current - Peak Output (Source, Sink): 2.5A, 2.5A Part Status: Active DigiKey Programmable: Not Verified |
auf Bestellung 12500 Stücke: Lieferzeit 10-14 Tag (e) |
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2ED2183S06FXUMA1 | Infineon Technologies |
Description: IC GATE DRVR HALF-BRIDGE 8SOICPackaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C (TA) Voltage - Supply: 10V ~ 20V Input Type: Non-Inverting High Side Voltage - Max (Bootstrap): 650 V Supplier Device Package: PG-DSO-8-53 Rise / Fall Time (Typ): 15ns, 15ns Channel Type: Synchronous Driven Configuration: Half-Bridge Number of Drivers: 2 Gate Type: IGBT, MOSFET (N-Channel) Logic Voltage - VIL, VIH: 1.1V, 1.7V Current - Peak Output (Source, Sink): 2.5A, 2.5A Part Status: Active DigiKey Programmable: Not Verified |
auf Bestellung 12505 Stücke: Lieferzeit 10-14 Tag (e) |
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2ED21824S06JXUMA1 | Infineon Technologies |
Description: IC GATE DRVR HALF-BRIDGE 14SOICPackaging: Tape & Reel (TR) Package / Case: 14-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C (TA) Voltage - Supply: 10V ~ 20V Input Type: Non-Inverting High Side Voltage - Max (Bootstrap): 650 V Supplier Device Package: PG-DSO-14-49 Rise / Fall Time (Typ): 15ns, 15ns Channel Type: Synchronous Driven Configuration: Half-Bridge Number of Drivers: 1 Gate Type: IGBT, MOSFET (N-Channel) Logic Voltage - VIL, VIH: 1.1V, 1.7V Current - Peak Output (Source, Sink): 2.5A, 2.5A Part Status: Active DigiKey Programmable: Not Verified |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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2ED21824S06JXUMA1 | Infineon Technologies |
Description: IC GATE DRVR HALF-BRIDGE 14SOICPackaging: Cut Tape (CT) Package / Case: 14-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C (TA) Voltage - Supply: 10V ~ 20V Input Type: Non-Inverting High Side Voltage - Max (Bootstrap): 650 V Supplier Device Package: PG-DSO-14-49 Rise / Fall Time (Typ): 15ns, 15ns Channel Type: Synchronous Driven Configuration: Half-Bridge Number of Drivers: 1 Gate Type: IGBT, MOSFET (N-Channel) Logic Voltage - VIL, VIH: 1.1V, 1.7V Current - Peak Output (Source, Sink): 2.5A, 2.5A Part Status: Active DigiKey Programmable: Not Verified |
auf Bestellung 2461 Stücke: Lieferzeit 10-14 Tag (e) |
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2ED21834S06JXUMA1 | Infineon Technologies |
Description: IC GATE DRVR HALF-BRIDGE 14SOICPackaging: Tape & Reel (TR) Package / Case: 14-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C (TA) Voltage - Supply: 10V ~ 20V Input Type: Non-Inverting High Side Voltage - Max (Bootstrap): 650 V Supplier Device Package: PG-DSO-14-49 Rise / Fall Time (Typ): 15ns, 15ns Channel Type: Synchronous Driven Configuration: Half-Bridge Number of Drivers: 1 Gate Type: IGBT, MOSFET (N-Channel) Logic Voltage - VIL, VIH: 1.1V, 1.7V Current - Peak Output (Source, Sink): 2.5A, 2.5A Part Status: Active DigiKey Programmable: Not Verified |
auf Bestellung 10000 Stücke: Lieferzeit 10-14 Tag (e) |
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2ED21834S06JXUMA1 | Infineon Technologies |
Description: IC GATE DRVR HALF-BRIDGE 14SOICPackaging: Cut Tape (CT) Package / Case: 14-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C (TA) Voltage - Supply: 10V ~ 20V Input Type: Non-Inverting High Side Voltage - Max (Bootstrap): 650 V Supplier Device Package: PG-DSO-14-49 Rise / Fall Time (Typ): 15ns, 15ns Channel Type: Synchronous Driven Configuration: Half-Bridge Number of Drivers: 1 Gate Type: IGBT, MOSFET (N-Channel) Logic Voltage - VIL, VIH: 1.1V, 1.7V Current - Peak Output (Source, Sink): 2.5A, 2.5A Part Status: Active DigiKey Programmable: Not Verified |
auf Bestellung 12114 Stücke: Lieferzeit 10-14 Tag (e) |
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2ED2184S06FXUMA1 | Infineon Technologies |
Description: IC GATE DRVR HALF-BRIDGE 8SOICPackaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C (TA) Voltage - Supply: 10V ~ 20V Input Type: Non-Inverting High Side Voltage - Max (Bootstrap): 650 V Supplier Device Package: PG-DSO-8-69 Rise / Fall Time (Typ): 15ns, 15ns Channel Type: Synchronous Driven Configuration: Half-Bridge Number of Drivers: 2 Gate Type: IGBT, MOSFET (N-Channel) Logic Voltage - VIL, VIH: 1.1V, 1.7V Current - Peak Output (Source, Sink): 2.5A, 2.5A Part Status: Active DigiKey Programmable: Not Verified |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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2ED2184S06FXUMA1 | Infineon Technologies |
Description: IC GATE DRVR HALF-BRIDGE 8SOICPackaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C (TA) Voltage - Supply: 10V ~ 20V Input Type: Non-Inverting High Side Voltage - Max (Bootstrap): 650 V Supplier Device Package: PG-DSO-8-69 Rise / Fall Time (Typ): 15ns, 15ns Channel Type: Synchronous Driven Configuration: Half-Bridge Number of Drivers: 2 Gate Type: IGBT, MOSFET (N-Channel) Logic Voltage - VIL, VIH: 1.1V, 1.7V Current - Peak Output (Source, Sink): 2.5A, 2.5A Part Status: Active DigiKey Programmable: Not Verified |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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2ED21844S06JXUMA1 | Infineon Technologies |
Description: IC GATE DRVR HALF-BRIDGE 14SOICPackaging: Tape & Reel (TR) Package / Case: 14-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C (TA) Voltage - Supply: 10V ~ 20V Input Type: Non-Inverting High Side Voltage - Max (Bootstrap): 650 V Supplier Device Package: PG-DSO-14-49 Rise / Fall Time (Typ): 15ns, 15ns Channel Type: Synchronous Driven Configuration: Half-Bridge Number of Drivers: 2 Gate Type: IGBT, MOSFET (N-Channel) Logic Voltage - VIL, VIH: 1.1V, 1.7V Current - Peak Output (Source, Sink): 2.5A, 2.5A Part Status: Active DigiKey Programmable: Not Verified |
auf Bestellung 5000 Stücke: Lieferzeit 10-14 Tag (e) |
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2ED21844S06JXUMA1 | Infineon Technologies |
Description: IC GATE DRVR HALF-BRIDGE 14SOICPackaging: Cut Tape (CT) Package / Case: 14-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C (TA) Voltage - Supply: 10V ~ 20V Input Type: Non-Inverting High Side Voltage - Max (Bootstrap): 650 V Supplier Device Package: PG-DSO-14-49 Rise / Fall Time (Typ): 15ns, 15ns Channel Type: Synchronous Driven Configuration: Half-Bridge Number of Drivers: 2 Gate Type: IGBT, MOSFET (N-Channel) Logic Voltage - VIL, VIH: 1.1V, 1.7V Current - Peak Output (Source, Sink): 2.5A, 2.5A Part Status: Active DigiKey Programmable: Not Verified |
auf Bestellung 6460 Stücke: Lieferzeit 10-14 Tag (e) |
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BSP321PH6327XTSA1 | Infineon Technologies |
Description: MOSFET P-CH 100V 980MA SOT223-4Input Capacitance (Ciss) (Max) @ Vds: 319 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V Drain to Source Voltage (Vdss): 100 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Not For New Designs Supplier Device Package: PG-SOT223-4 Vgs(th) (Max) @ Id: 4V @ 380µA Power Dissipation (Max): 1.8W (Ta) Rds On (Max) @ Id, Vgs: 900mOhm @ 980mA, 10V Current - Continuous Drain (Id) @ 25°C: 980mA (Tc) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-261-4, TO-261AA Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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BSO130N03MSGXUMA1 | Infineon Technologies |
Description: MOSFET N-CH 30V 9A 8DSOInput Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Obsolete Supplier Device Package: PG-DSO-8 Vgs(th) (Max) @ Id: 2V @ 250µA Power Dissipation (Max): 1.56W (Ta) Rds On (Max) @ Id, Vgs: 13mOhm @ 11.1A, 10V Current - Continuous Drain (Id) @ 25°C: 9A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Cut Tape (CT) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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BFR340FH6327 | Infineon Technologies |
Description: LOW-NOISE TRANSISTORTransistor Type: NPN Mounting Type: Surface Mount Package / Case: SOT-723 Packaging: Bulk Part Status: Active Supplier Device Package: PG-TSFP-3-1 Noise Figure (dB Typ @ f): 0.9dB ~ 1.2dB @ 100MHz ~ 2.4GHz Frequency - Transition: 14GHz DC Current Gain (hFE) (Min) @ Ic, Vce: 90 @ 5mA, 3V Voltage - Collector Emitter Breakdown (Max): 9V Current - Collector (Ic) (Max): 20mA Power - Max: 75mW Gain: 28dB Operating Temperature: 150°C (TJ) |
auf Bestellung 90000 Stücke: Lieferzeit 10-14 Tag (e) |
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BFR 340T E6327 | Infineon Technologies |
Description: RF TRANS NPN 9V 14GHZ PG-SC75-3DFrequency - Transition: 14GHz DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 3V Voltage - Collector Emitter Breakdown (Max): 9V Current - Collector (Ic) (Max): 10mA Power - Max: 60mW Gain: 15dB Operating Temperature: 150°C (TJ) Transistor Type: NPN Mounting Type: Surface Mount Package / Case: SC-75, SOT-416 Packaging: Tape & Reel (TR) Supplier Device Package: PG-SC75-3D Noise Figure (dB Typ @ f): 1.15dB @ 1.8GHz |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 6000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| STL81005Z | Infineon Technologies |
Description: LOW POWER 1550 NM FP LASERPackaging: Bulk Part Status: Active Voltage - Input: 1.5V Current Rating (Amps): 120mA Wavelength: 1550nm Package / Case: Module Power (Watts): 50mW |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
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CY22381SXI-174 | Infineon Technologies |
Description: IC CLOCK GENERATOR 8SOICPackaging: Tube Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Output: CMOS Type: Clock Generator, Fanout Distribution Input: LVTTL, Crystal Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 3.135V ~ 3.465V Ratio - Input:Output: 1:3 Differential - Input:Output: No/No Supplier Device Package: 8-SOIC PLL: Yes with Bypass Divider/Multiplier: Yes/No Number of Circuits: 3 DigiKey Programmable: Not Verified |
auf Bestellung 11222 Stücke: Lieferzeit 10-14 Tag (e) |
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CY22381SXI-211 | Infineon Technologies |
Description: IC CLOCK GENERATOR 8SOICPackaging: Tube Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Output: CMOS Type: Clock Generator, Fanout Distribution Input: LVTTL, Crystal Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 3.135V ~ 3.465V Ratio - Input:Output: 1:3 Differential - Input:Output: No/No Supplier Device Package: 8-SOIC PLL: Yes with Bypass Divider/Multiplier: Yes/No Number of Circuits: 3 DigiKey Programmable: Not Verified |
auf Bestellung 7410 Stücke: Lieferzeit 10-14 Tag (e) |
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CY22381SXI-146 | Infineon Technologies |
Description: IC CLOCK GENERATOR 8SOICPackaging: Tube Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Output: CMOS Type: Clock Generator, Fanout Distribution Input: LVTTL, Crystal Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 3.135V ~ 3.465V Ratio - Input:Output: 1:3 Differential - Input:Output: No/No Supplier Device Package: 8-SOIC PLL: Yes with Bypass Divider/Multiplier: Yes/No Number of Circuits: 3 DigiKey Programmable: Not Verified |
auf Bestellung 4453 Stücke: Lieferzeit 10-14 Tag (e) |
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CY22381SXI-174T | Infineon Technologies |
Description: IC CLOCK GENERATOR 8SOICDigiKey Programmable: Not Verified Number of Circuits: 3 Divider/Multiplier: Yes/No PLL: Yes with Bypass Supplier Device Package: 8-SOIC Differential - Input:Output: No/No Ratio - Input:Output: 1:3 Voltage - Supply: 3.135V ~ 3.465V Operating Temperature: -40°C ~ 85°C (TA) Input: LVTTL, Crystal Type: Clock Generator, Fanout Distribution Output: CMOS Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Bulk |
auf Bestellung 2500 Stücke: Lieferzeit 10-14 Tag (e) |
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BB 545 E7908 | Infineon Technologies |
Description: DIODE VAR CAP 30V 20MA SOD-323 |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 21000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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2ED2304S06FXUMA1 | Infineon Technologies |
Description: IC GATE DRVR HALF-BRIDGE 8SOICPackaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C (TA) Voltage - Supply: 10V ~ 17.5V Input Type: CMOS High Side Voltage - Max (Bootstrap): 650 V Supplier Device Package: PG-DSO-8-910 Rise / Fall Time (Typ): 48ns, 24ns Channel Type: Synchronous Driven Configuration: Half-Bridge Number of Drivers: 2 Gate Type: IGBT, MOSFET (N-Channel) Logic Voltage - VIL, VIH: 1.1V, 1.7V Current - Peak Output (Source, Sink): 360mA, 700mA Part Status: Active DigiKey Programmable: Not Verified |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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2ED2304S06FXUMA1 | Infineon Technologies |
Description: IC GATE DRVR HALF-BRIDGE 8SOICPackaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C (TA) Voltage - Supply: 10V ~ 17.5V Input Type: CMOS High Side Voltage - Max (Bootstrap): 650 V Supplier Device Package: PG-DSO-8-910 Rise / Fall Time (Typ): 48ns, 24ns Channel Type: Synchronous Driven Configuration: Half-Bridge Number of Drivers: 2 Gate Type: IGBT, MOSFET (N-Channel) Logic Voltage - VIL, VIH: 1.1V, 1.7V Current - Peak Output (Source, Sink): 360mA, 700mA Part Status: Active DigiKey Programmable: Not Verified |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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2ED2304S06FXLLA1 | Infineon Technologies |
Description: IC GATE DRVR HALF-BRIDGE 8SOICPackaging: Tube Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C (TA) Voltage - Supply: 10V ~ 17.5V Input Type: CMOS High Side Voltage - Max (Bootstrap): 650 V Supplier Device Package: PG-DSO-8-910 Rise / Fall Time (Typ): 48ns, 24ns Channel Type: Synchronous Driven Configuration: Half-Bridge Number of Drivers: 2 Gate Type: IGBT, MOSFET (N-Channel) Logic Voltage - VIL, VIH: 1.1V, 1.7V Current - Peak Output (Source, Sink): 360mA, 700mA Part Status: Obsolete DigiKey Programmable: Not Verified |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| BAR161E6327HTSA1 |
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Hersteller: Infineon Technologies
Description: RF DIODE PIN 100V 250MW PG-SOT23
Power Dissipation (Max): 250 mW
Current - Max: 140 mA
Part Status: Obsolete
Supplier Device Package: PG-SOT23
Voltage - Peak Reverse (Max): 100V
Resistance @ If, F: 12Ohm @ 10mA, 100MHz
Capacitance @ Vr, F: 0.5pF @ 50V, 1MHz
Operating Temperature: 150°C (TJ)
Diode Type: PIN - 1 Pair Common Anode
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Bulk
Description: RF DIODE PIN 100V 250MW PG-SOT23
Power Dissipation (Max): 250 mW
Current - Max: 140 mA
Part Status: Obsolete
Supplier Device Package: PG-SOT23
Voltage - Peak Reverse (Max): 100V
Resistance @ If, F: 12Ohm @ 10mA, 100MHz
Capacitance @ Vr, F: 0.5pF @ 50V, 1MHz
Operating Temperature: 150°C (TJ)
Diode Type: PIN - 1 Pair Common Anode
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Bulk
auf Bestellung 66000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1420+ | 0.38 EUR |
| BSC028N06NSSCATMA1 |
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Hersteller: Infineon Technologies
Description: MOSFET N-CH 60V 137A WSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 137A (Tc)
Rds On (Max) @ Id, Vgs: 2.8mOhm @ 50A, 10V
Power Dissipation (Max): 3W (Ta), 100W (Tc)
Vgs(th) (Max) @ Id: 3.3V @ 50µA
Supplier Device Package: PG-WSON-8-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3375 pF @ 30 V
Description: MOSFET N-CH 60V 137A WSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 137A (Tc)
Rds On (Max) @ Id, Vgs: 2.8mOhm @ 50A, 10V
Power Dissipation (Max): 3W (Ta), 100W (Tc)
Vgs(th) (Max) @ Id: 3.3V @ 50µA
Supplier Device Package: PG-WSON-8-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3375 pF @ 30 V
auf Bestellung 8000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 4000+ | 1.69 EUR |
| 8000+ | 1.64 EUR |
| BSC028N06NSSCATMA1 |
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Hersteller: Infineon Technologies
Description: MOSFET N-CH 60V 137A WSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 137A (Tc)
Rds On (Max) @ Id, Vgs: 2.8mOhm @ 50A, 10V
Power Dissipation (Max): 3W (Ta), 100W (Tc)
Vgs(th) (Max) @ Id: 3.3V @ 50µA
Supplier Device Package: PG-WSON-8-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3375 pF @ 30 V
Description: MOSFET N-CH 60V 137A WSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 137A (Tc)
Rds On (Max) @ Id, Vgs: 2.8mOhm @ 50A, 10V
Power Dissipation (Max): 3W (Ta), 100W (Tc)
Vgs(th) (Max) @ Id: 3.3V @ 50µA
Supplier Device Package: PG-WSON-8-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3375 pF @ 30 V
auf Bestellung 10546 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 4+ | 5.78 EUR |
| 10+ | 3.75 EUR |
| 100+ | 2.59 EUR |
| 500+ | 2.09 EUR |
| 1000+ | 2.01 EUR |
| XMC1404Q048X0200AAXUMA1 |
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Hersteller: Infineon Technologies
Description: IC MCU 32BIT 200KB FLASH 48VQFN
Packaging: Tape & Reel (TR)
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 200KB (200K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: A/D 12x12b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V
Connectivity: CANbus, I2C, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, I2S, LED, POR, PWM, WDT
Supplier Device Package: PG-VQFN-48-73
Part Status: Active
Number of I/O: 34
DigiKey Programmable: Not Verified
Description: IC MCU 32BIT 200KB FLASH 48VQFN
Packaging: Tape & Reel (TR)
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 200KB (200K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: A/D 12x12b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V
Connectivity: CANbus, I2C, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, I2S, LED, POR, PWM, WDT
Supplier Device Package: PG-VQFN-48-73
Part Status: Active
Number of I/O: 34
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| XMC1404Q048X0200AAXUMA1 |
![]() |
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 200KB FLASH 48VQFN
Packaging: Cut Tape (CT)
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 200KB (200K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: A/D 12x12b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V
Connectivity: CANbus, I2C, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, I2S, LED, POR, PWM, WDT
Supplier Device Package: PG-VQFN-48-73
Part Status: Active
Number of I/O: 34
DigiKey Programmable: Not Verified
Description: IC MCU 32BIT 200KB FLASH 48VQFN
Packaging: Cut Tape (CT)
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 200KB (200K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: A/D 12x12b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V
Connectivity: CANbus, I2C, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, I2S, LED, POR, PWM, WDT
Supplier Device Package: PG-VQFN-48-73
Part Status: Active
Number of I/O: 34
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
Im Einkaufswagen
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| SIDC42D120E6X1SA4 |
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Hersteller: Infineon Technologies
Description: DIODE GP 1.2KV 50A WAFER
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 50A
Supplier Device Package: Sawn on foil
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.9 V @ 50 A
Current - Reverse Leakage @ Vr: 27 µA @ 1200 V
Description: DIODE GP 1.2KV 50A WAFER
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 50A
Supplier Device Package: Sawn on foil
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.9 V @ 50 A
Current - Reverse Leakage @ Vr: 27 µA @ 1200 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| SIDC42D120F6X1SA3 |
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Hersteller: Infineon Technologies
Description: DIODE GP 1.2KV 50A WAFER
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 50A
Supplier Device Package: Sawn on foil
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 2.1 V @ 50 A
Current - Reverse Leakage @ Vr: 27 µA @ 1200 V
Description: DIODE GP 1.2KV 50A WAFER
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 50A
Supplier Device Package: Sawn on foil
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 2.1 V @ 50 A
Current - Reverse Leakage @ Vr: 27 µA @ 1200 V
Produkt ist nicht verfügbar
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| 111-4181PBF |
Hersteller: Infineon Technologies
Description: IC GATE DRIVER SMD
Description: IC GATE DRIVER SMD
Produkt ist nicht verfügbar
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| TLE9183QKXUMA1 |
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Hersteller: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 64LQFP
Packaging: Tape & Reel (TR)
Package / Case: 64-LQFP Exposed Pad
Mounting Type: Surface Mount
Supplier Device Package: PG-LQFP-64-28
Channel Type: 3-Phase
Driven Configuration: Half-Bridge
Number of Drivers: 3
Gate Type: MOSFET (N-Channel)
Grade: Automotive
DigiKey Programmable: Not Verified
Qualification: AEC-Q101
Description: IC GATE DRVR HALF-BRIDGE 64LQFP
Packaging: Tape & Reel (TR)
Package / Case: 64-LQFP Exposed Pad
Mounting Type: Surface Mount
Supplier Device Package: PG-LQFP-64-28
Channel Type: 3-Phase
Driven Configuration: Half-Bridge
Number of Drivers: 3
Gate Type: MOSFET (N-Channel)
Grade: Automotive
DigiKey Programmable: Not Verified
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Mindestbestellmenge: 1900 Stücke
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| BCR 521 E6327 |
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Hersteller: Infineon Technologies
Description: BIPOLAR DIGITAL TRANSISTOR
Description: BIPOLAR DIGITAL TRANSISTOR
Produkt ist nicht verfügbar
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| BCW60DE6327 |
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Hersteller: Infineon Technologies
Description: TRANS NPN 32V 0.1A SOT23
Power - Max: 330 mW
Voltage - Collector Emitter Breakdown (Max): 32 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Active
Supplier Device Package: PG-SOT23
Frequency - Transition: 250MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 380 @ 2mA, 5V
Current - Collector Cutoff (Max): 20nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 550mV @ 1.25mA, 50mA
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Bulk
Description: TRANS NPN 32V 0.1A SOT23
Power - Max: 330 mW
Voltage - Collector Emitter Breakdown (Max): 32 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Active
Supplier Device Package: PG-SOT23
Frequency - Transition: 250MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 380 @ 2mA, 5V
Current - Collector Cutoff (Max): 20nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 550mV @ 1.25mA, 50mA
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Bulk
auf Bestellung 13852 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 7397+ | 0.077 EUR |
| BCW 60FF E6327 |
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Hersteller: Infineon Technologies
Description: TRANS NPN 32V 0.1A SOT23
Power - Max: 330 mW
Voltage - Collector Emitter Breakdown (Max): 32 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Active
Supplier Device Package: PG-SOT23
Frequency - Transition: 250MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 2mA, 5V
Current - Collector Cutoff (Max): 20nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 550mV @ 1.25mA, 50mA
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Bulk
Description: TRANS NPN 32V 0.1A SOT23
Power - Max: 330 mW
Voltage - Collector Emitter Breakdown (Max): 32 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Active
Supplier Device Package: PG-SOT23
Frequency - Transition: 250MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 2mA, 5V
Current - Collector Cutoff (Max): 20nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 550mV @ 1.25mA, 50mA
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Bulk
auf Bestellung 45000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 6340+ | 0.1 EUR |
| BCW 60D E6327 |
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Hersteller: Infineon Technologies
Description: TRANS NPN 32V 0.1A SOT23
Power - Max: 330 mW
Voltage - Collector Emitter Breakdown (Max): 32 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Active
Supplier Device Package: PG-SOT23
Frequency - Transition: 250MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 380 @ 2mA, 5V
Current - Collector Cutoff (Max): 20nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 550mV @ 1.25mA, 50mA
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Bulk
Description: TRANS NPN 32V 0.1A SOT23
Power - Max: 330 mW
Voltage - Collector Emitter Breakdown (Max): 32 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Active
Supplier Device Package: PG-SOT23
Frequency - Transition: 250MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 380 @ 2mA, 5V
Current - Collector Cutoff (Max): 20nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 550mV @ 1.25mA, 50mA
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Bulk
auf Bestellung 30000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 8013+ | 0.083 EUR |
| BCW60FN |
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Hersteller: Infineon Technologies
Description: TRANS NPN 32V 0.1A SOT23-3
Power - Max: 330 mW
Voltage - Collector Emitter Breakdown (Max): 32 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Active
Supplier Device Package: PG-SOT23-3-1
Frequency - Transition: 250MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 2mA, 5V
Current - Collector Cutoff (Max): 20nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 550mV @ 1.25mA, 50mA
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Bulk
Description: TRANS NPN 32V 0.1A SOT23-3
Power - Max: 330 mW
Voltage - Collector Emitter Breakdown (Max): 32 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Active
Supplier Device Package: PG-SOT23-3-1
Frequency - Transition: 250MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 2mA, 5V
Current - Collector Cutoff (Max): 20nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 550mV @ 1.25mA, 50mA
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Bulk
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BCW60FE6327 |
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Hersteller: Infineon Technologies
Description: SMALL SIGNAL BIPOLAR TRANSISTOR
Power - Max: 330 mW
Voltage - Collector Emitter Breakdown (Max): 32 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Active
Supplier Device Package: PG-SOT23-3-1
Frequency - Transition: 250MHz
Current - Collector Cutoff (Max): 20nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 550mV @ 1.25mA, 50mA
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Bulk
Description: SMALL SIGNAL BIPOLAR TRANSISTOR
Power - Max: 330 mW
Voltage - Collector Emitter Breakdown (Max): 32 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Active
Supplier Device Package: PG-SOT23-3-1
Frequency - Transition: 250MHz
Current - Collector Cutoff (Max): 20nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 550mV @ 1.25mA, 50mA
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Bulk
Produkt ist nicht verfügbar
Im Einkaufswagen
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| EVAL1ED44175N01BTOBO1 |
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Hersteller: Infineon Technologies
Description: EVAL-1ED44175N01B
Part Status: Active
Embedded: Yes
Supplied Contents: Board(s)
Utilized IC / Part: 1ED44175N01B
Type: Power Management
Function: Gate Driver
Packaging: Bulk
Description: EVAL-1ED44175N01B
Part Status: Active
Embedded: Yes
Supplied Contents: Board(s)
Utilized IC / Part: 1ED44175N01B
Type: Power Management
Function: Gate Driver
Packaging: Bulk
auf Bestellung 3 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 55.19 EUR |
| BSM35GD120DN2BOSA1 |
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Hersteller: Infineon Technologies
Description: IGBT MODULE
Input Capacitance (Cies) @ Vce: 2 nF @ 25 V
Current - Collector Cutoff (Max): 1 mA
Power - Max: 280 W
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 50 A
Part Status: Active
Supplier Device Package: AG-ECONOPACK 2K
NTC Thermistor: No
Vce(on) (Max) @ Vge, Ic: 3.2V @ 15V, 35A
Operating Temperature: 150°C (TJ)
Configuration: Three Phase Inverter
Input: Standard
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Bulk
Description: IGBT MODULE
Input Capacitance (Cies) @ Vce: 2 nF @ 25 V
Current - Collector Cutoff (Max): 1 mA
Power - Max: 280 W
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 50 A
Part Status: Active
Supplier Device Package: AG-ECONOPACK 2K
NTC Thermistor: No
Vce(on) (Max) @ Vge, Ic: 3.2V @ 15V, 35A
Operating Temperature: 150°C (TJ)
Configuration: Three Phase Inverter
Input: Standard
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Bulk
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| PEF33008HLV2.1 |
Hersteller: Infineon Technologies
Description: VINETIC VOICE ACCESS SOLUTION
Packaging: Bulk
Part Status: Active
Description: VINETIC VOICE ACCESS SOLUTION
Packaging: Bulk
Part Status: Active
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 47+ | 12.53 EUR |
| IPW60R280C6FKSA1 |
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Hersteller: Infineon Technologies
Description: MOSFET N-CH 600V 13.8A TO247-3
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Bulk
Input Capacitance (Ciss) (Max) @ Vds: 950 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: PG-TO247-3-1
Vgs(th) (Max) @ Id: 3.5V @ 430µA
Power Dissipation (Max): 104W (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 6.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 13.8A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Description: MOSFET N-CH 600V 13.8A TO247-3
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Bulk
Input Capacitance (Ciss) (Max) @ Vds: 950 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: PG-TO247-3-1
Vgs(th) (Max) @ Id: 3.5V @ 430µA
Power Dissipation (Max): 104W (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 6.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 13.8A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
auf Bestellung 14160 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 216+ | 2.49 EUR |
| IPW60R280C6 |
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Hersteller: Infineon Technologies
Description: MOSFET N-CH 600V 13.8A TO247-3
Input Capacitance (Ciss) (Max) @ Vds: 950 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Part Status: Active
Supplier Device Package: PG-TO247-3-41
Vgs(th) (Max) @ Id: 3.5V @ 430µA
Power Dissipation (Max): 104W (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 6.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 13.8A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Bulk
Description: MOSFET N-CH 600V 13.8A TO247-3
Input Capacitance (Ciss) (Max) @ Vds: 950 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Part Status: Active
Supplier Device Package: PG-TO247-3-41
Vgs(th) (Max) @ Id: 3.5V @ 430µA
Power Dissipation (Max): 104W (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 6.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 13.8A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Bulk
auf Bestellung 210 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 210+ | 2.94 EUR |
| IPW60R024P7XKSA1 |
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Hersteller: Infineon Technologies
Description: MOSFET N-CH 650V 101A TO247-3-41
Input Capacitance (Ciss) (Max) @ Vds: 7144 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 164 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PG-TO247-3-41
Vgs(th) (Max) @ Id: 4V @ 2.03mA
Power Dissipation (Max): 291W (Tc)
Rds On (Max) @ Id, Vgs: 24mOhm @ 42.4A, 10V
Current - Continuous Drain (Id) @ 25°C: 101A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Description: MOSFET N-CH 650V 101A TO247-3-41
Input Capacitance (Ciss) (Max) @ Vds: 7144 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 164 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PG-TO247-3-41
Vgs(th) (Max) @ Id: 4V @ 2.03mA
Power Dissipation (Max): 291W (Tc)
Rds On (Max) @ Id, Vgs: 24mOhm @ 42.4A, 10V
Current - Continuous Drain (Id) @ 25°C: 101A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
auf Bestellung 514 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 25.79 EUR |
| 30+ | 15.61 EUR |
| 120+ | 13.39 EUR |
| 510+ | 12.2 EUR |
| TT270N16KOFHPSA1 |
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Hersteller: Infineon Technologies
Description: SCR MODULE 1.6KV 450A MODULE
Description: SCR MODULE 1.6KV 450A MODULE
Produkt ist nicht verfügbar
Mindestbestellmenge: 3 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| TLE42694GXUMA2 |
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Hersteller: Infineon Technologies
Description: IC REG LINEAR 5V 100MA 8DSO
Qualification: AEC-Q100
Grade: Automotive
Packaging: Cut Tape (CT)
Current - Supply (Max): 8 mA
Protection Features: Over Current, Over Temperature, Reverse Polarity
Voltage Dropout (Max): 0.5V @ 100mA
PSRR: 70dB (100Hz)
Part Status: Active
Control Features: Reset
Voltage - Output (Min/Fixed): 5V
Supplier Device Package: PG-DSO-8
Number of Regulators: 1
Voltage - Input (Max): 45V
Current - Quiescent (Iq): 280 µA
Output Configuration: Positive
Operating Temperature: -40°C ~ 150°C
Current - Output: 100mA
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Description: IC REG LINEAR 5V 100MA 8DSO
Qualification: AEC-Q100
Grade: Automotive
Packaging: Cut Tape (CT)
Current - Supply (Max): 8 mA
Protection Features: Over Current, Over Temperature, Reverse Polarity
Voltage Dropout (Max): 0.5V @ 100mA
PSRR: 70dB (100Hz)
Part Status: Active
Control Features: Reset
Voltage - Output (Min/Fixed): 5V
Supplier Device Package: PG-DSO-8
Number of Regulators: 1
Voltage - Input (Max): 45V
Current - Quiescent (Iq): 280 µA
Output Configuration: Positive
Operating Temperature: -40°C ~ 150°C
Current - Output: 100mA
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: 8-SOIC (0.154", 3.90mm Width)
auf Bestellung 4765 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 10+ | 2.26 EUR |
| 13+ | 1.64 EUR |
| 25+ | 1.49 EUR |
| 100+ | 1.31 EUR |
| 250+ | 1.23 EUR |
| 500+ | 1.18 EUR |
| 1000+ | 1.15 EUR |
| ICL8001G |
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Hersteller: Infineon Technologies
Description: FLYBACK AND PFC LED CONTROLLER
Description: FLYBACK AND PFC LED CONTROLLER
auf Bestellung 237659 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 419+ | 1.38 EUR |
| ICL8002G |
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Hersteller: Infineon Technologies
Description: IC LED DRIVER OFFL PWM 8DSO
Voltage - Supply (Max): 26V
Voltage - Supply (Min): 9.8V
Dimming: PWM
Supplier Device Package: PG-DSO-8
Topology: Flyback, Step-Down (Buck)
Internal Switch(s): No
Applications: LED Lighting
Operating Temperature: -40°C ~ 150°C (TJ)
Type: AC DC Offline Switcher
Number of Outputs: 1
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Bulk
Description: IC LED DRIVER OFFL PWM 8DSO
Voltage - Supply (Max): 26V
Voltage - Supply (Min): 9.8V
Dimming: PWM
Supplier Device Package: PG-DSO-8
Topology: Flyback, Step-Down (Buck)
Internal Switch(s): No
Applications: LED Lighting
Operating Temperature: -40°C ~ 150°C (TJ)
Type: AC DC Offline Switcher
Number of Outputs: 1
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Bulk
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BCW68HE6327 |
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Hersteller: Infineon Technologies
Description: SMALL SIGNAL BIPOLAR TRANSISTOR
Description: SMALL SIGNAL BIPOLAR TRANSISTOR
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| ICE3AR10080JZTXKLA1 |
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Hersteller: Infineon Technologies
Description: 1.1A, 113KHZ SWITCHING FREQ-MAX
Packaging: Bulk
Package / Case: 8-DIP (0.300", 7.62mm), 7 Leads
Mounting Type: Through Hole
Operating Temperature: -20°C ~ 150°C (TJ)
Duty Cycle: 75%
Frequency - Switching: 100kHz
Internal Switch(s): Yes
Voltage - Breakdown: 800V
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 10.5V ~ 27V
Supplier Device Package: PG-DIP-7-4
Fault Protection: Current Limiting, Open Loop, Over Load, Over Temperature, Over Voltage, UVLO
Voltage - Start Up: 17 V
Control Features: Soft Start
Part Status: Active
Power (Watts): 22 W
Description: 1.1A, 113KHZ SWITCHING FREQ-MAX
Packaging: Bulk
Package / Case: 8-DIP (0.300", 7.62mm), 7 Leads
Mounting Type: Through Hole
Operating Temperature: -20°C ~ 150°C (TJ)
Duty Cycle: 75%
Frequency - Switching: 100kHz
Internal Switch(s): Yes
Voltage - Breakdown: 800V
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 10.5V ~ 27V
Supplier Device Package: PG-DIP-7-4
Fault Protection: Current Limiting, Open Loop, Over Load, Over Temperature, Over Voltage, UVLO
Voltage - Start Up: 17 V
Control Features: Soft Start
Part Status: Active
Power (Watts): 22 W
auf Bestellung 500 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 240+ | 2.3 EUR |
| ICE3A2065I |
![]() |
Hersteller: Infineon Technologies
Description: IC OFFLINE SWITCH FLYBACK TO220
Power (Watts): 102 W
Part Status: Discontinued at Digi-Key
Control Features: Soft Start
Voltage - Start Up: 15 V
Fault Protection: Current Limiting, Open Loop, Over Load, Over Temperature, Over Voltage
Supplier Device Package: PG-TO220-6-46
Voltage - Supply (Vcc/Vdd): 8.5V ~ 21V
Topology: Flyback
Output Isolation: Isolated
Voltage - Breakdown: 650V
Internal Switch(s): Yes
Frequency - Switching: 100kHz
Duty Cycle: 72%
Operating Temperature: -25°C ~ 130°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-6 Formed Leads
Packaging: Bulk
Description: IC OFFLINE SWITCH FLYBACK TO220
Power (Watts): 102 W
Part Status: Discontinued at Digi-Key
Control Features: Soft Start
Voltage - Start Up: 15 V
Fault Protection: Current Limiting, Open Loop, Over Load, Over Temperature, Over Voltage
Supplier Device Package: PG-TO220-6-46
Voltage - Supply (Vcc/Vdd): 8.5V ~ 21V
Topology: Flyback
Output Isolation: Isolated
Voltage - Breakdown: 650V
Internal Switch(s): Yes
Frequency - Switching: 100kHz
Duty Cycle: 72%
Operating Temperature: -25°C ~ 130°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-6 Formed Leads
Packaging: Bulk
auf Bestellung 2000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 185+ | 2.99 EUR |
| ICE3A0565 |
![]() |
Hersteller: Infineon Technologies
Description: 100KHZ SWITCHING FREQ-MAX
Packaging: Bulk
Part Status: Active
Description: 100KHZ SWITCHING FREQ-MAX
Packaging: Bulk
Part Status: Active
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| SMBTA14E6327HTSA1872 |
![]() |
Hersteller: Infineon Technologies
Description: TRANS NPN DARL 30V 0.3A SOT23
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Darlington
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 100µA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 20000 @ 100mA, 5V
Frequency - Transition: 125MHz
Supplier Device Package: PG-SOT23
Part Status: Active
Current - Collector (Ic) (Max): 300 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 330 mW
Description: TRANS NPN DARL 30V 0.3A SOT23
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Darlington
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 100µA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 20000 @ 100mA, 5V
Frequency - Transition: 125MHz
Supplier Device Package: PG-SOT23
Part Status: Active
Current - Collector (Ic) (Max): 300 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 330 mW
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| SMBTA14E6327 |
![]() |
Hersteller: Infineon Technologies
Description: TRANSISTOR DARLINGTON NPN 30V
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Darlington
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 100µA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 20000 @ 100mA, 5V
Frequency - Transition: 125MHz
Supplier Device Package: PG-SOT23-3-1
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 300 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 330 mW
Qualification: AEC-Q101
Description: TRANSISTOR DARLINGTON NPN 30V
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Darlington
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 100µA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 20000 @ 100mA, 5V
Frequency - Transition: 125MHz
Supplier Device Package: PG-SOT23-3-1
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 300 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 330 mW
Qualification: AEC-Q101
auf Bestellung 210081 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2874+ | 0.19 EUR |
| SMBTA14E6327XT |
![]() |
Hersteller: Infineon Technologies
Description: TRANS NPN DARL 30V 0.3A SOT23
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Darlington
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 100µA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 20000 @ 100mA, 5V
Frequency - Transition: 125MHz
Supplier Device Package: PG-SOT23
Part Status: Active
Current - Collector (Ic) (Max): 300 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 330 mW
Description: TRANS NPN DARL 30V 0.3A SOT23
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Darlington
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 100µA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 20000 @ 100mA, 5V
Frequency - Transition: 125MHz
Supplier Device Package: PG-SOT23
Part Status: Active
Current - Collector (Ic) (Max): 300 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 330 mW
auf Bestellung 30000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2874+ | 0.19 EUR |
| 2ED21814S06JXUMA1 |
![]() |
Hersteller: Infineon Technologies
Description: IC GATE DRVR HI/LOW SIDE 14SOIC
Packaging: Cut Tape (CT)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 650 V
Supplier Device Package: PG-DSO-14
Rise / Fall Time (Typ): 15ns, 15ns
Channel Type: Independent
Driven Configuration: High-Side, Low-Side
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 1.1V, 1.7V
Current - Peak Output (Source, Sink): 2.5A, 2.5A
Part Status: Active
DigiKey Programmable: Not Verified
Description: IC GATE DRVR HI/LOW SIDE 14SOIC
Packaging: Cut Tape (CT)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 650 V
Supplier Device Package: PG-DSO-14
Rise / Fall Time (Typ): 15ns, 15ns
Channel Type: Independent
Driven Configuration: High-Side, Low-Side
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 1.1V, 1.7V
Current - Peak Output (Source, Sink): 2.5A, 2.5A
Part Status: Active
DigiKey Programmable: Not Verified
auf Bestellung 2252 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 5+ | 4.57 EUR |
| 10+ | 3.37 EUR |
| 25+ | 3.07 EUR |
| 100+ | 2.75 EUR |
| 250+ | 2.59 EUR |
| 500+ | 2.5 EUR |
| 1000+ | 2.42 EUR |
| 2ED2182S06FXUMA1 |
![]() |
Hersteller: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 8SOIC
Channel Type: Synchronous
Rise / Fall Time (Typ): 15ns, 15ns
Supplier Device Package: PG-DSO-8-69
High Side Voltage - Max (Bootstrap): 650 V
Input Type: Non-Inverting
Voltage - Supply: 10V ~ 20V
Operating Temperature: -40°C ~ 125°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
DigiKey Programmable: Not Verified
Part Status: Active
Current - Peak Output (Source, Sink): 2.5A, 2.5A
Logic Voltage - VIL, VIH: 1.1V, 1.7V
Gate Type: IGBT, MOSFET (N-Channel)
Number of Drivers: 1
Driven Configuration: Half-Bridge
Description: IC GATE DRVR HALF-BRIDGE 8SOIC
Channel Type: Synchronous
Rise / Fall Time (Typ): 15ns, 15ns
Supplier Device Package: PG-DSO-8-69
High Side Voltage - Max (Bootstrap): 650 V
Input Type: Non-Inverting
Voltage - Supply: 10V ~ 20V
Operating Temperature: -40°C ~ 125°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
DigiKey Programmable: Not Verified
Part Status: Active
Current - Peak Output (Source, Sink): 2.5A, 2.5A
Logic Voltage - VIL, VIH: 1.1V, 1.7V
Gate Type: IGBT, MOSFET (N-Channel)
Number of Drivers: 1
Driven Configuration: Half-Bridge
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| 2ED2182S06FXUMA1 |
![]() |
Hersteller: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 8SOIC
Part Status: Active
Current - Peak Output (Source, Sink): 2.5A, 2.5A
DigiKey Programmable: Not Verified
Logic Voltage - VIL, VIH: 1.1V, 1.7V
Gate Type: IGBT, MOSFET (N-Channel)
Number of Drivers: 1
Driven Configuration: Half-Bridge
Channel Type: Synchronous
Rise / Fall Time (Typ): 15ns, 15ns
Supplier Device Package: PG-DSO-8-69
High Side Voltage - Max (Bootstrap): 650 V
Input Type: Non-Inverting
Voltage - Supply: 10V ~ 20V
Operating Temperature: -40°C ~ 125°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
Description: IC GATE DRVR HALF-BRIDGE 8SOIC
Part Status: Active
Current - Peak Output (Source, Sink): 2.5A, 2.5A
DigiKey Programmable: Not Verified
Logic Voltage - VIL, VIH: 1.1V, 1.7V
Gate Type: IGBT, MOSFET (N-Channel)
Number of Drivers: 1
Driven Configuration: Half-Bridge
Channel Type: Synchronous
Rise / Fall Time (Typ): 15ns, 15ns
Supplier Device Package: PG-DSO-8-69
High Side Voltage - Max (Bootstrap): 650 V
Input Type: Non-Inverting
Voltage - Supply: 10V ~ 20V
Operating Temperature: -40°C ~ 125°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
auf Bestellung 154 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 7+ | 3.31 EUR |
| 10+ | 2.43 EUR |
| 25+ | 2.21 EUR |
| 100+ | 1.98 EUR |
| 2ED2181S06FXUMA1 |
![]() |
Hersteller: Infineon Technologies
Description: IC GATE DRVR HI/LOW SIDE 8SOIC
DigiKey Programmable: Not Verified
Part Status: Active
Current - Peak Output (Source, Sink): 2.5A, 2.5A
Logic Voltage - VIL, VIH: 1.1V, 1.7V
Gate Type: IGBT, MOSFET (N-Channel)
Number of Drivers: 1
Driven Configuration: High-Side or Low-Side
Channel Type: Synchronous
Rise / Fall Time (Typ): 15ns, 15ns
Supplier Device Package: PG-DSO-8-53
High Side Voltage - Max (Bootstrap): 650 V
Input Type: Non-Inverting
Voltage - Supply: 10V ~ 20V
Operating Temperature: -40°C ~ 125°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Description: IC GATE DRVR HI/LOW SIDE 8SOIC
DigiKey Programmable: Not Verified
Part Status: Active
Current - Peak Output (Source, Sink): 2.5A, 2.5A
Logic Voltage - VIL, VIH: 1.1V, 1.7V
Gate Type: IGBT, MOSFET (N-Channel)
Number of Drivers: 1
Driven Configuration: High-Side or Low-Side
Channel Type: Synchronous
Rise / Fall Time (Typ): 15ns, 15ns
Supplier Device Package: PG-DSO-8-53
High Side Voltage - Max (Bootstrap): 650 V
Input Type: Non-Inverting
Voltage - Supply: 10V ~ 20V
Operating Temperature: -40°C ~ 125°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| 2ED2181S06FXUMA1 |
![]() |
Hersteller: Infineon Technologies
Description: IC GATE DRVR HI/LOW SIDE 8SOIC
DigiKey Programmable: Not Verified
Part Status: Active
Current - Peak Output (Source, Sink): 2.5A, 2.5A
Logic Voltage - VIL, VIH: 1.1V, 1.7V
Gate Type: IGBT, MOSFET (N-Channel)
Number of Drivers: 1
Driven Configuration: High-Side or Low-Side
Channel Type: Synchronous
Rise / Fall Time (Typ): 15ns, 15ns
Supplier Device Package: PG-DSO-8-53
High Side Voltage - Max (Bootstrap): 650 V
Input Type: Non-Inverting
Voltage - Supply: 10V ~ 20V
Operating Temperature: -40°C ~ 125°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
Description: IC GATE DRVR HI/LOW SIDE 8SOIC
DigiKey Programmable: Not Verified
Part Status: Active
Current - Peak Output (Source, Sink): 2.5A, 2.5A
Logic Voltage - VIL, VIH: 1.1V, 1.7V
Gate Type: IGBT, MOSFET (N-Channel)
Number of Drivers: 1
Driven Configuration: High-Side or Low-Side
Channel Type: Synchronous
Rise / Fall Time (Typ): 15ns, 15ns
Supplier Device Package: PG-DSO-8-53
High Side Voltage - Max (Bootstrap): 650 V
Input Type: Non-Inverting
Voltage - Supply: 10V ~ 20V
Operating Temperature: -40°C ~ 125°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
auf Bestellung 2637 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 7+ | 3.31 EUR |
| 10+ | 2.43 EUR |
| 25+ | 2.21 EUR |
| 100+ | 1.98 EUR |
| 250+ | 1.86 EUR |
| 500+ | 1.78 EUR |
| 1000+ | 1.73 EUR |
| 2ED2183S06FXUMA1 |
![]() |
Hersteller: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 650 V
Supplier Device Package: PG-DSO-8-53
Rise / Fall Time (Typ): 15ns, 15ns
Channel Type: Synchronous
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 1.1V, 1.7V
Current - Peak Output (Source, Sink): 2.5A, 2.5A
Part Status: Active
DigiKey Programmable: Not Verified
Description: IC GATE DRVR HALF-BRIDGE 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 650 V
Supplier Device Package: PG-DSO-8-53
Rise / Fall Time (Typ): 15ns, 15ns
Channel Type: Synchronous
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 1.1V, 1.7V
Current - Peak Output (Source, Sink): 2.5A, 2.5A
Part Status: Active
DigiKey Programmable: Not Verified
auf Bestellung 12500 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2500+ | 1.92 EUR |
| 5000+ | 1.88 EUR |
| 7500+ | 1.86 EUR |
| 2ED2183S06FXUMA1 |
![]() |
Hersteller: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 650 V
Supplier Device Package: PG-DSO-8-53
Rise / Fall Time (Typ): 15ns, 15ns
Channel Type: Synchronous
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 1.1V, 1.7V
Current - Peak Output (Source, Sink): 2.5A, 2.5A
Part Status: Active
DigiKey Programmable: Not Verified
Description: IC GATE DRVR HALF-BRIDGE 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 650 V
Supplier Device Package: PG-DSO-8-53
Rise / Fall Time (Typ): 15ns, 15ns
Channel Type: Synchronous
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 1.1V, 1.7V
Current - Peak Output (Source, Sink): 2.5A, 2.5A
Part Status: Active
DigiKey Programmable: Not Verified
auf Bestellung 12505 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 6+ | 3.77 EUR |
| 10+ | 2.77 EUR |
| 25+ | 2.52 EUR |
| 100+ | 2.26 EUR |
| 250+ | 2.13 EUR |
| 500+ | 2.05 EUR |
| 2ED21824S06JXUMA1 |
![]() |
Hersteller: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 14SOIC
Packaging: Tape & Reel (TR)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 650 V
Supplier Device Package: PG-DSO-14-49
Rise / Fall Time (Typ): 15ns, 15ns
Channel Type: Synchronous
Driven Configuration: Half-Bridge
Number of Drivers: 1
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 1.1V, 1.7V
Current - Peak Output (Source, Sink): 2.5A, 2.5A
Part Status: Active
DigiKey Programmable: Not Verified
Description: IC GATE DRVR HALF-BRIDGE 14SOIC
Packaging: Tape & Reel (TR)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 650 V
Supplier Device Package: PG-DSO-14-49
Rise / Fall Time (Typ): 15ns, 15ns
Channel Type: Synchronous
Driven Configuration: Half-Bridge
Number of Drivers: 1
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 1.1V, 1.7V
Current - Peak Output (Source, Sink): 2.5A, 2.5A
Part Status: Active
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| 2ED21824S06JXUMA1 |
![]() |
Hersteller: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 14SOIC
Packaging: Cut Tape (CT)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 650 V
Supplier Device Package: PG-DSO-14-49
Rise / Fall Time (Typ): 15ns, 15ns
Channel Type: Synchronous
Driven Configuration: Half-Bridge
Number of Drivers: 1
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 1.1V, 1.7V
Current - Peak Output (Source, Sink): 2.5A, 2.5A
Part Status: Active
DigiKey Programmable: Not Verified
Description: IC GATE DRVR HALF-BRIDGE 14SOIC
Packaging: Cut Tape (CT)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 650 V
Supplier Device Package: PG-DSO-14-49
Rise / Fall Time (Typ): 15ns, 15ns
Channel Type: Synchronous
Driven Configuration: Half-Bridge
Number of Drivers: 1
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 1.1V, 1.7V
Current - Peak Output (Source, Sink): 2.5A, 2.5A
Part Status: Active
DigiKey Programmable: Not Verified
auf Bestellung 2461 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 5+ | 4.36 EUR |
| 10+ | 3.22 EUR |
| 25+ | 2.95 EUR |
| 100+ | 2.64 EUR |
| 250+ | 2.49 EUR |
| 500+ | 2.42 EUR |
| 2ED21834S06JXUMA1 |
![]() |
Hersteller: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 14SOIC
Packaging: Tape & Reel (TR)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 650 V
Supplier Device Package: PG-DSO-14-49
Rise / Fall Time (Typ): 15ns, 15ns
Channel Type: Synchronous
Driven Configuration: Half-Bridge
Number of Drivers: 1
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 1.1V, 1.7V
Current - Peak Output (Source, Sink): 2.5A, 2.5A
Part Status: Active
DigiKey Programmable: Not Verified
Description: IC GATE DRVR HALF-BRIDGE 14SOIC
Packaging: Tape & Reel (TR)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 650 V
Supplier Device Package: PG-DSO-14-49
Rise / Fall Time (Typ): 15ns, 15ns
Channel Type: Synchronous
Driven Configuration: Half-Bridge
Number of Drivers: 1
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 1.1V, 1.7V
Current - Peak Output (Source, Sink): 2.5A, 2.5A
Part Status: Active
DigiKey Programmable: Not Verified
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2500+ | 1.77 EUR |
| 2ED21834S06JXUMA1 |
![]() |
Hersteller: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 14SOIC
Packaging: Cut Tape (CT)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 650 V
Supplier Device Package: PG-DSO-14-49
Rise / Fall Time (Typ): 15ns, 15ns
Channel Type: Synchronous
Driven Configuration: Half-Bridge
Number of Drivers: 1
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 1.1V, 1.7V
Current - Peak Output (Source, Sink): 2.5A, 2.5A
Part Status: Active
DigiKey Programmable: Not Verified
Description: IC GATE DRVR HALF-BRIDGE 14SOIC
Packaging: Cut Tape (CT)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 650 V
Supplier Device Package: PG-DSO-14-49
Rise / Fall Time (Typ): 15ns, 15ns
Channel Type: Synchronous
Driven Configuration: Half-Bridge
Number of Drivers: 1
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 1.1V, 1.7V
Current - Peak Output (Source, Sink): 2.5A, 2.5A
Part Status: Active
DigiKey Programmable: Not Verified
auf Bestellung 12114 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 6+ | 3.83 EUR |
| 10+ | 2.83 EUR |
| 25+ | 2.58 EUR |
| 100+ | 2.31 EUR |
| 250+ | 2.18 EUR |
| 500+ | 2.09 EUR |
| 1000+ | 2.03 EUR |
| 2ED2184S06FXUMA1 |
![]() |
Hersteller: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 650 V
Supplier Device Package: PG-DSO-8-69
Rise / Fall Time (Typ): 15ns, 15ns
Channel Type: Synchronous
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 1.1V, 1.7V
Current - Peak Output (Source, Sink): 2.5A, 2.5A
Part Status: Active
DigiKey Programmable: Not Verified
Description: IC GATE DRVR HALF-BRIDGE 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 650 V
Supplier Device Package: PG-DSO-8-69
Rise / Fall Time (Typ): 15ns, 15ns
Channel Type: Synchronous
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 1.1V, 1.7V
Current - Peak Output (Source, Sink): 2.5A, 2.5A
Part Status: Active
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| 2ED2184S06FXUMA1 |
![]() |
Hersteller: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 650 V
Supplier Device Package: PG-DSO-8-69
Rise / Fall Time (Typ): 15ns, 15ns
Channel Type: Synchronous
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 1.1V, 1.7V
Current - Peak Output (Source, Sink): 2.5A, 2.5A
Part Status: Active
DigiKey Programmable: Not Verified
Description: IC GATE DRVR HALF-BRIDGE 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 650 V
Supplier Device Package: PG-DSO-8-69
Rise / Fall Time (Typ): 15ns, 15ns
Channel Type: Synchronous
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 1.1V, 1.7V
Current - Peak Output (Source, Sink): 2.5A, 2.5A
Part Status: Active
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| 2ED21844S06JXUMA1 |
![]() |
Hersteller: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 14SOIC
Packaging: Tape & Reel (TR)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 650 V
Supplier Device Package: PG-DSO-14-49
Rise / Fall Time (Typ): 15ns, 15ns
Channel Type: Synchronous
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 1.1V, 1.7V
Current - Peak Output (Source, Sink): 2.5A, 2.5A
Part Status: Active
DigiKey Programmable: Not Verified
Description: IC GATE DRVR HALF-BRIDGE 14SOIC
Packaging: Tape & Reel (TR)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 650 V
Supplier Device Package: PG-DSO-14-49
Rise / Fall Time (Typ): 15ns, 15ns
Channel Type: Synchronous
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 1.1V, 1.7V
Current - Peak Output (Source, Sink): 2.5A, 2.5A
Part Status: Active
DigiKey Programmable: Not Verified
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2500+ | 2.08 EUR |
| 5000+ | 2.03 EUR |
| 2ED21844S06JXUMA1 |
![]() |
Hersteller: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 14SOIC
Packaging: Cut Tape (CT)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 650 V
Supplier Device Package: PG-DSO-14-49
Rise / Fall Time (Typ): 15ns, 15ns
Channel Type: Synchronous
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 1.1V, 1.7V
Current - Peak Output (Source, Sink): 2.5A, 2.5A
Part Status: Active
DigiKey Programmable: Not Verified
Description: IC GATE DRVR HALF-BRIDGE 14SOIC
Packaging: Cut Tape (CT)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 650 V
Supplier Device Package: PG-DSO-14-49
Rise / Fall Time (Typ): 15ns, 15ns
Channel Type: Synchronous
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 1.1V, 1.7V
Current - Peak Output (Source, Sink): 2.5A, 2.5A
Part Status: Active
DigiKey Programmable: Not Verified
auf Bestellung 6460 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 6+ | 4.05 EUR |
| 10+ | 2.99 EUR |
| 25+ | 2.73 EUR |
| 100+ | 2.44 EUR |
| 250+ | 2.3 EUR |
| 500+ | 2.23 EUR |
| BSP321PH6327XTSA1 |
![]() |
Hersteller: Infineon Technologies
Description: MOSFET P-CH 100V 980MA SOT223-4
Input Capacitance (Ciss) (Max) @ Vds: 319 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Not For New Designs
Supplier Device Package: PG-SOT223-4
Vgs(th) (Max) @ Id: 4V @ 380µA
Power Dissipation (Max): 1.8W (Ta)
Rds On (Max) @ Id, Vgs: 900mOhm @ 980mA, 10V
Current - Continuous Drain (Id) @ 25°C: 980mA (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Packaging: Tape & Reel (TR)
Description: MOSFET P-CH 100V 980MA SOT223-4
Input Capacitance (Ciss) (Max) @ Vds: 319 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Not For New Designs
Supplier Device Package: PG-SOT223-4
Vgs(th) (Max) @ Id: 4V @ 380µA
Power Dissipation (Max): 1.8W (Ta)
Rds On (Max) @ Id, Vgs: 900mOhm @ 980mA, 10V
Current - Continuous Drain (Id) @ 25°C: 980mA (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BSO130N03MSGXUMA1 |
![]() |
Hersteller: Infineon Technologies
Description: MOSFET N-CH 30V 9A 8DSO
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: PG-DSO-8
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 1.56W (Ta)
Rds On (Max) @ Id, Vgs: 13mOhm @ 11.1A, 10V
Current - Continuous Drain (Id) @ 25°C: 9A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
Description: MOSFET N-CH 30V 9A 8DSO
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: PG-DSO-8
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 1.56W (Ta)
Rds On (Max) @ Id, Vgs: 13mOhm @ 11.1A, 10V
Current - Continuous Drain (Id) @ 25°C: 9A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BFR340FH6327 |
![]() |
Hersteller: Infineon Technologies
Description: LOW-NOISE TRANSISTOR
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: SOT-723
Packaging: Bulk
Part Status: Active
Supplier Device Package: PG-TSFP-3-1
Noise Figure (dB Typ @ f): 0.9dB ~ 1.2dB @ 100MHz ~ 2.4GHz
Frequency - Transition: 14GHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 90 @ 5mA, 3V
Voltage - Collector Emitter Breakdown (Max): 9V
Current - Collector (Ic) (Max): 20mA
Power - Max: 75mW
Gain: 28dB
Operating Temperature: 150°C (TJ)
Description: LOW-NOISE TRANSISTOR
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: SOT-723
Packaging: Bulk
Part Status: Active
Supplier Device Package: PG-TSFP-3-1
Noise Figure (dB Typ @ f): 0.9dB ~ 1.2dB @ 100MHz ~ 2.4GHz
Frequency - Transition: 14GHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 90 @ 5mA, 3V
Voltage - Collector Emitter Breakdown (Max): 9V
Current - Collector (Ic) (Max): 20mA
Power - Max: 75mW
Gain: 28dB
Operating Temperature: 150°C (TJ)
auf Bestellung 90000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3418+ | 0.17 EUR |
| BFR 340T E6327 |
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Hersteller: Infineon Technologies
Description: RF TRANS NPN 9V 14GHZ PG-SC75-3D
Frequency - Transition: 14GHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 3V
Voltage - Collector Emitter Breakdown (Max): 9V
Current - Collector (Ic) (Max): 10mA
Power - Max: 60mW
Gain: 15dB
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: SC-75, SOT-416
Packaging: Tape & Reel (TR)
Supplier Device Package: PG-SC75-3D
Noise Figure (dB Typ @ f): 1.15dB @ 1.8GHz
Description: RF TRANS NPN 9V 14GHZ PG-SC75-3D
Frequency - Transition: 14GHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 3V
Voltage - Collector Emitter Breakdown (Max): 9V
Current - Collector (Ic) (Max): 10mA
Power - Max: 60mW
Gain: 15dB
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: SC-75, SOT-416
Packaging: Tape & Reel (TR)
Supplier Device Package: PG-SC75-3D
Noise Figure (dB Typ @ f): 1.15dB @ 1.8GHz
Produkt ist nicht verfügbar
Mindestbestellmenge: 6000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| STL81005Z |
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Hersteller: Infineon Technologies
Description: LOW POWER 1550 NM FP LASER
Packaging: Bulk
Part Status: Active
Voltage - Input: 1.5V
Current Rating (Amps): 120mA
Wavelength: 1550nm
Package / Case: Module
Power (Watts): 50mW
Description: LOW POWER 1550 NM FP LASER
Packaging: Bulk
Part Status: Active
Voltage - Input: 1.5V
Current Rating (Amps): 120mA
Wavelength: 1550nm
Package / Case: Module
Power (Watts): 50mW
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| CY22381SXI-174 |
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Hersteller: Infineon Technologies
Description: IC CLOCK GENERATOR 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Output: CMOS
Type: Clock Generator, Fanout Distribution
Input: LVTTL, Crystal
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 3.135V ~ 3.465V
Ratio - Input:Output: 1:3
Differential - Input:Output: No/No
Supplier Device Package: 8-SOIC
PLL: Yes with Bypass
Divider/Multiplier: Yes/No
Number of Circuits: 3
DigiKey Programmable: Not Verified
Description: IC CLOCK GENERATOR 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Output: CMOS
Type: Clock Generator, Fanout Distribution
Input: LVTTL, Crystal
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 3.135V ~ 3.465V
Ratio - Input:Output: 1:3
Differential - Input:Output: No/No
Supplier Device Package: 8-SOIC
PLL: Yes with Bypass
Divider/Multiplier: Yes/No
Number of Circuits: 3
DigiKey Programmable: Not Verified
auf Bestellung 11222 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 110+ | 5.39 EUR |
| CY22381SXI-211 |
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Hersteller: Infineon Technologies
Description: IC CLOCK GENERATOR 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Output: CMOS
Type: Clock Generator, Fanout Distribution
Input: LVTTL, Crystal
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 3.135V ~ 3.465V
Ratio - Input:Output: 1:3
Differential - Input:Output: No/No
Supplier Device Package: 8-SOIC
PLL: Yes with Bypass
Divider/Multiplier: Yes/No
Number of Circuits: 3
DigiKey Programmable: Not Verified
Description: IC CLOCK GENERATOR 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Output: CMOS
Type: Clock Generator, Fanout Distribution
Input: LVTTL, Crystal
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 3.135V ~ 3.465V
Ratio - Input:Output: 1:3
Differential - Input:Output: No/No
Supplier Device Package: 8-SOIC
PLL: Yes with Bypass
Divider/Multiplier: Yes/No
Number of Circuits: 3
DigiKey Programmable: Not Verified
auf Bestellung 7410 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 110+ | 5.39 EUR |
| CY22381SXI-146 |
![]() |
Hersteller: Infineon Technologies
Description: IC CLOCK GENERATOR 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Output: CMOS
Type: Clock Generator, Fanout Distribution
Input: LVTTL, Crystal
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 3.135V ~ 3.465V
Ratio - Input:Output: 1:3
Differential - Input:Output: No/No
Supplier Device Package: 8-SOIC
PLL: Yes with Bypass
Divider/Multiplier: Yes/No
Number of Circuits: 3
DigiKey Programmable: Not Verified
Description: IC CLOCK GENERATOR 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Output: CMOS
Type: Clock Generator, Fanout Distribution
Input: LVTTL, Crystal
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 3.135V ~ 3.465V
Ratio - Input:Output: 1:3
Differential - Input:Output: No/No
Supplier Device Package: 8-SOIC
PLL: Yes with Bypass
Divider/Multiplier: Yes/No
Number of Circuits: 3
DigiKey Programmable: Not Verified
auf Bestellung 4453 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 110+ | 5.39 EUR |
| CY22381SXI-174T |
![]() |
Hersteller: Infineon Technologies
Description: IC CLOCK GENERATOR 8SOIC
DigiKey Programmable: Not Verified
Number of Circuits: 3
Divider/Multiplier: Yes/No
PLL: Yes with Bypass
Supplier Device Package: 8-SOIC
Differential - Input:Output: No/No
Ratio - Input:Output: 1:3
Voltage - Supply: 3.135V ~ 3.465V
Operating Temperature: -40°C ~ 85°C (TA)
Input: LVTTL, Crystal
Type: Clock Generator, Fanout Distribution
Output: CMOS
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Bulk
Description: IC CLOCK GENERATOR 8SOIC
DigiKey Programmable: Not Verified
Number of Circuits: 3
Divider/Multiplier: Yes/No
PLL: Yes with Bypass
Supplier Device Package: 8-SOIC
Differential - Input:Output: No/No
Ratio - Input:Output: 1:3
Voltage - Supply: 3.135V ~ 3.465V
Operating Temperature: -40°C ~ 85°C (TA)
Input: LVTTL, Crystal
Type: Clock Generator, Fanout Distribution
Output: CMOS
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Bulk
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 107+ | 5.53 EUR |
| BB 545 E7908 |
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Hersteller: Infineon Technologies
Description: DIODE VAR CAP 30V 20MA SOD-323
Description: DIODE VAR CAP 30V 20MA SOD-323
Produkt ist nicht verfügbar
Mindestbestellmenge: 21000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| 2ED2304S06FXUMA1 |
![]() |
Hersteller: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 10V ~ 17.5V
Input Type: CMOS
High Side Voltage - Max (Bootstrap): 650 V
Supplier Device Package: PG-DSO-8-910
Rise / Fall Time (Typ): 48ns, 24ns
Channel Type: Synchronous
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 1.1V, 1.7V
Current - Peak Output (Source, Sink): 360mA, 700mA
Part Status: Active
DigiKey Programmable: Not Verified
Description: IC GATE DRVR HALF-BRIDGE 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 10V ~ 17.5V
Input Type: CMOS
High Side Voltage - Max (Bootstrap): 650 V
Supplier Device Package: PG-DSO-8-910
Rise / Fall Time (Typ): 48ns, 24ns
Channel Type: Synchronous
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 1.1V, 1.7V
Current - Peak Output (Source, Sink): 360mA, 700mA
Part Status: Active
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
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| 2ED2304S06FXUMA1 |
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Hersteller: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 10V ~ 17.5V
Input Type: CMOS
High Side Voltage - Max (Bootstrap): 650 V
Supplier Device Package: PG-DSO-8-910
Rise / Fall Time (Typ): 48ns, 24ns
Channel Type: Synchronous
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 1.1V, 1.7V
Current - Peak Output (Source, Sink): 360mA, 700mA
Part Status: Active
DigiKey Programmable: Not Verified
Description: IC GATE DRVR HALF-BRIDGE 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 10V ~ 17.5V
Input Type: CMOS
High Side Voltage - Max (Bootstrap): 650 V
Supplier Device Package: PG-DSO-8-910
Rise / Fall Time (Typ): 48ns, 24ns
Channel Type: Synchronous
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 1.1V, 1.7V
Current - Peak Output (Source, Sink): 360mA, 700mA
Part Status: Active
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| 2ED2304S06FXLLA1 |
![]() |
Hersteller: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 10V ~ 17.5V
Input Type: CMOS
High Side Voltage - Max (Bootstrap): 650 V
Supplier Device Package: PG-DSO-8-910
Rise / Fall Time (Typ): 48ns, 24ns
Channel Type: Synchronous
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 1.1V, 1.7V
Current - Peak Output (Source, Sink): 360mA, 700mA
Part Status: Obsolete
DigiKey Programmable: Not Verified
Description: IC GATE DRVR HALF-BRIDGE 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 10V ~ 17.5V
Input Type: CMOS
High Side Voltage - Max (Bootstrap): 650 V
Supplier Device Package: PG-DSO-8-910
Rise / Fall Time (Typ): 48ns, 24ns
Channel Type: Synchronous
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 1.1V, 1.7V
Current - Peak Output (Source, Sink): 360mA, 700mA
Part Status: Obsolete
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH

































