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SABC165LMHATR SABC165LMHATR Infineon Technologies INFNS01617-1.pdf?t.download=true&u=5oefqw Description: LEGACY 16-BIT MCU
Packaging: Bulk
Package / Case: 100-BQFP
Mounting Type: Surface Mount
Speed: 20MHz
RAM Size: 2K x 8
Operating Temperature: 0°C ~ 70°C (TA)
Oscillator Type: External, Internal
Program Memory Type: ROMless
Core Processor: C166
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 4.5V ~ 5.5V
Connectivity: ASC, EBI/EMI, SPI, SSC, UART/USART
Peripherals: POR, PWM, WDT
Supplier Device Package: P-MQFP-100
Part Status: Active
Number of I/O: 77
Produkt ist nicht verfügbar
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SAB-C165-L25F SAB-C165-L25F Infineon Technologies INFNS21451-1.pdf?t.download=true&u=5oefqw Description: LEGACY 16-BIT MCU
Packaging: Bulk
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Speed: 25MHz
RAM Size: 2K x 8
Operating Temperature: 0°C ~ 70°C (TA)
Oscillator Type: External, Internal
Program Memory Type: ROMless
Core Processor: C166
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 4.5V ~ 5.5V
Connectivity: ASC, EBI/EMI, SPI, SSC, UART/USART
Peripherals: POR, PWM, WDT
Supplier Device Package: PG-TQFP-100
Part Status: Active
Number of I/O: 77
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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SAB-C165-L25FHA SAB-C165-L25FHA Infineon Technologies INFNS01617-1.pdf?t.download=true&u=5oefqw Description: LEGACY 16-BIT MCU
Packaging: Bulk
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Speed: 25MHz
RAM Size: 2K x 8
Operating Temperature: 0°C ~ 70°C (TA)
Oscillator Type: External, Internal
Program Memory Type: ROMless
Core Processor: C166
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 4.5V ~ 5.5V
Connectivity: ASC, EBI/EMI, SPI, SSC, UART/USART
Peripherals: POR, PWM, WDT
Supplier Device Package: PG-TQFP-100-1
Part Status: Active
Number of I/O: 77
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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C165L25FHABXUMA1 C165L25FHABXUMA1 Infineon Technologies c165_ds_v20_2000_12_7.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a304412b407950112b4362c3764dc Description: IC MCU 16BIT ROMLESS 100TQFP
Packaging: Bulk
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Speed: 25MHz
RAM Size: 2K x 8
Operating Temperature: 0°C ~ 70°C (TA)
Oscillator Type: External
Program Memory Type: ROMless
Core Processor: C166
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 4.5V ~ 5.5V
Connectivity: EBI/EMI, SPI, UART/USART
Peripherals: POR, PWM, WDT
Supplier Device Package: PG-TQFP-100
Part Status: Obsolete
Number of I/O: 77
auf Bestellung 100 Stücke:
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SABC165LFHABXUMA1 SABC165LFHABXUMA1 Infineon Technologies INFNS01617-1.pdf?t.download=true&u=5oefqw Description: LEGACY 16-BIT MCU
Packaging: Bulk
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Speed: 20MHz
RAM Size: 2K x 8
Operating Temperature: 0°C ~ 70°C (TA)
Oscillator Type: External, Internal
Program Memory Type: ROMless
Core Processor: C166
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 4.5V ~ 5.5V
Connectivity: ASC, EBI/EMI, SPI, SSC, UART/USART
Peripherals: POR, PWM, WDT
Supplier Device Package: PG-TQFP-100
Part Status: Active
Number of I/O: 77
DigiKey Programmable: Not Verified
auf Bestellung 154 Stücke:
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20+24.39 EUR
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SAB-C165LFHABXUMA1 SAB-C165LFHABXUMA1 Infineon Technologies INFNS01617-1.pdf?t.download=true&u=5oefqw Description: LEGACY 16 BIT MICROCONTROLLER
Packaging: Bulk
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Speed: 20MHz
RAM Size: 2K x 8
Operating Temperature: 0°C ~ 70°C (TA)
Oscillator Type: External, Internal
Program Memory Type: ROMless
Core Processor: C166
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 4.5V ~ 5.5V
Connectivity: ASC, EBI/EMI, SPI, SSC, UART/USART
Peripherals: POR, PWM, WDT
Supplier Device Package: PG-TQFP-100
Part Status: Active
Number of I/O: 77
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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SAB-C165LFHABXQMA1 SAB-C165LFHABXQMA1 Infineon Technologies Infineon-C165-DS-v02_00-en[8].pdf?fileId=db3a304412b407950112b43a49a66fd7 Description: LEGACY 16 BIT MICROCONTROLLER
Packaging: Bulk
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Speed: 20MHz
RAM Size: 2K x 8
Operating Temperature: 0°C ~ 70°C (TA)
Oscillator Type: External, Internal
Program Memory Type: ROMless
Core Processor: C166
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 4.5V ~ 5.5V
Connectivity: ASC, EBI/EMI, SPI, SSC, UART/USART
Peripherals: POR, PWM, WDT
Supplier Device Package: PG-TQFP-100
Part Status: Active
Number of I/O: 77
DigiKey Programmable: Not Verified
auf Bestellung 103 Stücke:
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20+24.71 EUR
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SABC165LF3VHABXUMA1 SABC165LF3VHABXUMA1 Infineon Technologies INFNS01617-1.pdf?t.download=true&u=5oefqw Description: LEGACY 16-BIT MCU
Packaging: Bulk
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Speed: 20MHz
RAM Size: 2K x 8
Operating Temperature: 0°C ~ 70°C (TA)
Oscillator Type: External, Internal
Program Memory Type: ROMless
Core Processor: C166
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 3.6V
Connectivity: ASC, EBI/EMI, SPI, SSC, UART/USART
Peripherals: POR, PWM, WDT
Supplier Device Package: PG-TQFP-100
Part Status: Active
Number of I/O: 77
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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SAB-C165-LF SAB-C165-LF Infineon Technologies INFNS12141-1.pdf?t.download=true&u=5oefqw Description: LEGACY 16-BIT MCU
Packaging: Bulk
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Speed: 20MHz
RAM Size: 2K x 8
Operating Temperature: 0°C ~ 70°C (TA)
Oscillator Type: External, Internal
Program Memory Type: ROMless
Core Processor: C166
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 4.5V ~ 5.5V
Connectivity: ASC, EBI/EMI, SPI, SSC, UART/USART
Peripherals: POR, PWM, WDT
Supplier Device Package: PG-TQFP-100
Part Status: Active
Number of I/O: 77
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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SABC165LMHABXQMA1 Infineon Technologies Description: LEGACY 16-BIT MCU
Produkt ist nicht verfügbar
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AUXYBFP3306 Infineon Technologies Description: MOSFET N-CH 60V TO-247AC
Packaging: Tube
Part Status: Obsolete
Produkt ist nicht verfügbar
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BAS4004E6433HTMA1 BAS4004E6433HTMA1 Infineon Technologies INFNS19700-1.pdf?t.download=true&u=5oefqw Description: DIODE ARR SCHOTT 40V 120MA SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 100 ps
Technology: Schottky
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 120mA (DC)
Supplier Device Package: PG-SOT23
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 40 mA
Current - Reverse Leakage @ Vr: 1 µA @ 30 V
auf Bestellung 26013 Stücke:
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79+0.22 EUR
100+0.18 EUR
500+0.13 EUR
1000+0.11 EUR
2000+0.1 EUR
5000+0.09 EUR
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BSP92PL6327 BSP92PL6327 Infineon Technologies INFNS16528-1.pdf?t.download=true&u=5oefqw Description: P-CHANNEL POWER MOSFET
auf Bestellung 283295 Stücke:
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Mindestbestellmenge: 1501
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BSZ084N08NS5ATMA1 BSZ084N08NS5ATMA1 Infineon Technologies Infineon-BSZ084N08NS5-DS-v02_00-EN.pdf?fileId=5546d4624a75e5f1014aca9007801edb Description: MOSFET N-CH 80V 40A TSDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 8.4mOhm @ 20A, 10V
Power Dissipation (Max): 63W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 31µA
Supplier Device Package: PG-TSDSON-8-FL
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1820 pF @ 40 V
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BC 817-40 E6433 BC 817-40 E6433 Infineon Technologies 4a-BC-817-40-E6433.pdf Description: TRANS NPN 45V 0.5A PG-SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 100mA, 1V
Frequency - Transition: 170MHz
Supplier Device Package: PG-SOT23
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 330 mW
Produkt ist nicht verfügbar
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CYW20737A1KML2GT CYW20737A1KML2GT Infineon Technologies Infineon-CYW20737_Single-Chip_Bluetooth_Low_Energy-Only_System-On-Chip-DataSheet-v05_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee20b3d6851&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Description: IC RF TXRX+MCU BLUETOOTH 32VFQFN
Packaging: Tape & Reel (TR)
Package / Case: 32-VFQFN Exposed Pad
Sensitivity: -94dBm
Mounting Type: Surface Mount
Frequency: 2.4GHz
Memory Size: 320kB ROM, 60kB RAM
Type: TxRx + MCU
Operating Temperature: -30°C ~ 85°C
Voltage - Supply: 3.8V
Power - Output: 4dBm
Protocol: Bluetooth v4.0
Current - Receiving: 9.8mA
Data Rate (Max): 1Mbps
Current - Transmitting: 9.1mA
Supplier Device Package: 32-QFN (5x5)
GPIO: 14
Modulation: GFSK
RF Family/Standard: Bluetooth
Serial Interfaces: I2C, SPI, UART
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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BAT15099E6433HTMA1 BAT15099E6433HTMA1 Infineon Technologies INFNS15420-1.pdf?t.download=true&u=5oefqw Description: DIODE SCHOTTKY 4V 100MW SOT143-4
Packaging: Cut Tape (CT)
Package / Case: TO-253-4, TO-253AA
Diode Type: Schottky - 2 Independent
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 0.35pF @ 0V, 1MHz
Voltage - Peak Reverse (Max): 4V
Supplier Device Package: PG-SOT-143-3D
Part Status: Active
Current - Max: 110 mA
Power Dissipation (Max): 100 mW
auf Bestellung 1222 Stücke:
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12+1.51 EUR
19+0.94 EUR
100+0.61 EUR
500+0.47 EUR
1000+0.43 EUR
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BAR6302LE6327XTMA1 BAR6302LE6327XTMA1 Infineon Technologies INFNS15694-1.pdf?t.download=true&u=5oefqw Description: RF DIODE PIN 50V 250MW TSLP-2
Packaging: Cut Tape (CT)
Package / Case: SOD-882
Diode Type: PIN - Single
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 0.3pF @ 5V, 1MHz
Resistance @ If, F: 1Ohm @ 10mA, 100MHz
Voltage - Peak Reverse (Max): 50V
Supplier Device Package: PG-TSLP-2-1
Part Status: Active
Current - Max: 100 mA
Power Dissipation (Max): 250 mW
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117+0.15 EUR
133+0.13 EUR
157+0.11 EUR
250+0.1 EUR
500+0.097 EUR
1000+0.092 EUR
2500+0.087 EUR
5000+0.084 EUR
Mindestbestellmenge: 77
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BAR6305WH6327XTSA1 BAR6305WH6327XTSA1 Infineon Technologies INFNS15694-1.pdf?t.download=true&u=5oefqw Description: RF DIODE PIN 50V 250MW PG-SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Diode Type: PIN - 1 Pair Common Cathode
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 0.3pF @ 5V, 1MHz
Resistance @ If, F: 1Ohm @ 10mA, 100MHz
Voltage - Peak Reverse (Max): 50V
Supplier Device Package: PG-SOT23
Part Status: Active
Current - Max: 100 mA
Power Dissipation (Max): 250 mW
auf Bestellung 8195 Stücke:
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67+0.26 EUR
102+0.17 EUR
116+0.15 EUR
137+0.13 EUR
250+0.12 EUR
500+0.11 EUR
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BAR6305E6327HTSA1 BAR6305E6327HTSA1 Infineon Technologies INFNS15694-1.pdf?t.download=true&u=5oefqw Description: RF DIODE PIN 50V 250MW PG-SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Diode Type: PIN - 1 Pair Common Cathode
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 0.3pF @ 5V, 1MHz
Resistance @ If, F: 1Ohm @ 10mA, 100MHz
Voltage - Peak Reverse (Max): 50V
Supplier Device Package: PG-SOT23
Part Status: Active
Current - Max: 100 mA
Power Dissipation (Max): 250 mW
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42+0.42 EUR
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69+0.26 EUR
100+0.22 EUR
250+0.2 EUR
500+0.19 EUR
1000+0.18 EUR
Mindestbestellmenge: 42
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CY8C201A0-LDX2I CY8C201A0-LDX2I Infineon Technologies ?utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Description: IC CAPSENSE EXP 10 I/O 16QFN
Packaging: Bulk
Package / Case: 16-UFQFN
Mounting Type: Surface Mount
Interface: I2C
Type: Buttons, Slider
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2.4V ~ 5.25V
Current - Supply: 1.5mA
Number of Inputs: Up to 6
Supplier Device Package: 16-QFN (3x3)
Proximity Detection: No
LED Driver Channels: Up to 5
DigiKey Programmable: Not Verified
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FF450R12KE4EHOSA1 FF450R12KE4EHOSA1 Infineon Technologies Infineon-FF450R12KE4_E-DS-v02_00-en_de.pdf?fileId=db3a304344d727a80144dfdce80e0c42 Description: IGBT MOD 1200V 520A 2400W
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: 2 Independent
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 450A
NTC Thermistor: No
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 520 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 2400 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 28 nF @ 25 V
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PEB4365T-SV1.1 Infineon Technologies Description: TWIN SUBSCRIBER LINE INTERFACE
auf Bestellung 777 Stücke:
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36+15.01 EUR
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IRF8707TRPBF-1 IRF8707TRPBF-1 Infineon Technologies IRF8707PbF-1_6-23-14.pdf Description: MOSFET N-CH 30V 11A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta)
Rds On (Max) @ Id, Vgs: 11.9mOhm @ 11A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 2.35V @ 25µA
Supplier Device Package: 8-SOIC
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 9.3 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 760 pF @ 15 V
Produkt ist nicht verfügbar
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KIT6W13VP7950VTOBO1 KIT6W13VP7950VTOBO1 Infineon Technologies Infineon-General_description_KIT_6W_13V_P7_950V-AdditionalTechnicalInformation-v03_00-EN.pdf?fileId=5546d462724fa97201725020678f0582 Description: KIT_6W_13V_P7_950V BIAS BOARD
Packaging: Bulk
Voltage - Output: 12V
Voltage - Input: 120V ~ 440V
Current - Output: 500mA
Regulator Topology: Flyback
Board Type: Fully Populated
Utilized IC / Part: ICE5QSAG, IPU95R3K7P7
Supplied Contents: Board(s)
Main Purpose: DC/DC Converter
Outputs and Type: 1, Isolated
Part Status: Active
Power - Output: 6 W
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EVAL3K3WLLCHBCFD7TOBO1 EVAL3K3WLLCHBCFD7TOBO1 Infineon Technologies Infineon-Evaluationboard_EVAL_3K3W_LLC_HB_CFD7-ApplicationNotes-v01_00-EN.pdf?fileId=5546d4626cb27db2016d3a60583725dc Description: EVAL BOARD FOR ICE5QSAG XMC4200
Packaging: Box
Voltage - Output: 43.5V ~ 59.5V
Voltage - Input: 350V ~ 415V
Regulator Topology: Flyback
Board Type: Fully Populated
Utilized IC / Part: ICE5QSAG, XMC4200
Supplied Contents: Board(s)
Main Purpose: DC/DC Converter
Outputs and Type: 1 Isolated Output
Power - Output: 3.3kW
Contents: Board(s)
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IPB60R090CFD7ATMA1 IPB60R090CFD7ATMA1 Infineon Technologies Infineon-IPB60R090CFD7-DataSheet-v02_00-EN.pdf?fileId=5546d4626b2d8e69016bb2452db11936 Description: MOSFET N-CH 600V 25A TO263-3
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Rds On (Max) @ Id, Vgs: 90mOhm @ 11.4A, 10V
Power Dissipation (Max): 124W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 570µA
Supplier Device Package: PG-TO263-3-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2103 pF @ 400 V
Produkt ist nicht verfügbar
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PEF20954HTV1.1 PEF20954HTV1.1 Infineon Technologies Description: SIDEC SMART INTEGRATED DIGITAL E
Packaging: Bulk
Package / Case: 144-LQFP
Mounting Type: Surface Mount
Function: Smart Integrated Digital Echo Canceller (SIDEC)
Interface: PCM, Serial, UCC
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 3V ~ 3.6V
Current - Supply: 350mA
Supplier Device Package: PG-TQFP-144-2
Part Status: Active
Number of Circuits: 1
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2+183.08 EUR
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IPG20N04S4L07AATMA1 IPG20N04S4L07AATMA1 Infineon Technologies Infineon-IPG20N04S4L_07A-DS-v01_00-en.pdf?fileId=db3a30433d346a2d013d454a0c9d515c Description: MOSFET 2N-CH 40V 20A 8TDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount, Wettable Flank
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 65W
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 20A
Input Capacitance (Ciss) (Max) @ Vds: 3980pF @ 25V
Rds On (Max) @ Id, Vgs: 7.2mOhm @ 17A, 10V
Gate Charge (Qg) (Max) @ Vgs: 50nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.2V @ 30µA
Supplier Device Package: PG-TDSON-8-10
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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BSZ018NE2LSATMA1 BSZ018NE2LSATMA1 Infineon Technologies BSZ018NE2LS_Rev+2.1.pdf?folderId=db3a304313b8b5a60113cee8763b02d7&fileId=db3a30432ee77f32012f072b132a57fc Description: MOSFET N-CH 25V 23A/40A TSDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 23A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs: 1.8mOhm @ 30A, 10V
Power Dissipation (Max): 2.1W (Ta), 69W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TSDSON-8-FL
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2800 pF @ 12 V
Produkt ist nicht verfügbar
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BSZ018NE2LSATMA1 BSZ018NE2LSATMA1 Infineon Technologies BSZ018NE2LS_Rev+2.1.pdf?folderId=db3a304313b8b5a60113cee8763b02d7&fileId=db3a30432ee77f32012f072b132a57fc Description: MOSFET N-CH 25V 23A/40A TSDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 23A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs: 1.8mOhm @ 30A, 10V
Power Dissipation (Max): 2.1W (Ta), 69W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TSDSON-8-FL
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2800 pF @ 12 V
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AUIRFS3207Z-INF AUIRFS3207Z-INF Infineon Technologies INFN-S-A0004165566-1.pdf?t.download=true&u=5oefqw Description: MOSFET N-CH 75V 120A D2PAK
Packaging: Bulk
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 4.1mOhm @ 75A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 150µA
Supplier Device Package: D2PAK
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6920 pF @ 50 V
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IPD90P04P405ATMA2 IPD90P04P405ATMA2 Infineon Technologies Infineon-IPD90P04P4-05-DataSheet-v01_02-EN.pdf?fileId=db3a304329a0f6ee0129dbba2b4d5c79 Description: MOSFET P-CH 40V 90A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 4.7mOhm @ 90A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PG-TO252-3-313
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 154 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10300 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
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IPD90P04P405ATMA2 IPD90P04P405ATMA2 Infineon Technologies Infineon-IPD90P04P4-05-DataSheet-v01_02-EN.pdf?fileId=db3a304329a0f6ee0129dbba2b4d5c79 Description: MOSFET P-CH 40V 90A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 4.7mOhm @ 90A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PG-TO252-3-313
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 154 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10300 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
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BC807-25B5000 BC807-25B5000 Infineon Technologies INFNS11647-1.pdf?t.download=true&u=5oefqw Description: TRANS PNP 45V 0.5A PG-SOT23
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 100mA, 1V
Frequency - Transition: 200MHz
Supplier Device Package: PG-SOT23
Part Status: Active
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 330 mW
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BC807-25B5003 BC807-25B5003 Infineon Technologies INFNS11647-1.pdf?t.download=true&u=5oefqw Description: TRANS PNP 45V 0.5A PG-SOT23-3-11
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 100mA, 1V
Frequency - Transition: 200MHz
Supplier Device Package: PG-SOT23-3-11
Part Status: Active
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 330 mW
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BSO303SPH BSO303SPH Infineon Technologies INFNS16523-1.pdf?t.download=true&u=5oefqw Description: 7.2A, 30V, 0.021OHM, P-CHANNEL,
Packaging: Bulk
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 7.2A (Ta)
Rds On (Max) @ Id, Vgs: 21mOhm @ 9.1A, 10V
Power Dissipation (Max): 1.56W (Ta)
Vgs(th) (Max) @ Id: 2V @ 100µA
Supplier Device Package: PG-DSO-8-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2330 pF @ 25 V
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BSO303SP BSO303SP Infineon Technologies INFNS11933-1.pdf?t.download=true&u=5oefqw Description: P-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 7.2A (Ta)
Rds On (Max) @ Id, Vgs: 21mOhm @ 9.1A, 10V
Power Dissipation (Max): 1.56W (Ta)
Vgs(th) (Max) @ Id: 2V @ 100µA
Supplier Device Package: PG-DSO-8-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2330 pF @ 25 V
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BSO303SPNTMA1 BSO303SPNTMA1 Infineon Technologies BSO303SP_080102.pdf Description: MOSFET P-CH 30V 8.9A 8DSO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 8.9A (Ta)
Rds On (Max) @ Id, Vgs: 21mOhm @ 8.9A, 10V
Power Dissipation (Max): 2.35W (Ta)
Vgs(th) (Max) @ Id: 2V @ 100µA
Supplier Device Package: PG-DSO-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 69 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1754 pF @ 25 V
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PEB4265TV1.2 Infineon Technologies INTL-S-A0006019977-1.pdf?t.download=true&u=5oefqw Description: DUSLIC DUAL CHANNEL SUBSCRIBER L
Packaging: Bulk
auf Bestellung 269 Stücke:
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ICE2PCS06GXUMA1 ICE2PCS06GXUMA1 Infineon Technologies ProductDatasheetICE2PCS06_v1.1+Mar2010.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a3043327f13e3013285ff4ecb2e77 Description: IC PFC CTRLR CCM 70KHZ 8DSO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 11V ~ 26V
Frequency - Switching: 58kHz ~ 70kHz
Mode: Continuous Conduction (CCM)
Supplier Device Package: PG-DSO-8
Part Status: Active
Current - Startup: 450 µA
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ICE2PCS06GXUMA1 ICE2PCS06GXUMA1 Infineon Technologies ProductDatasheetICE2PCS06_v1.1+Mar2010.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a3043327f13e3013285ff4ecb2e77 Description: IC PFC CTRLR CCM 70KHZ 8DSO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 11V ~ 26V
Frequency - Switching: 58kHz ~ 70kHz
Mode: Continuous Conduction (CCM)
Supplier Device Package: PG-DSO-8
Part Status: Active
Current - Startup: 450 µA
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ICE2PCS03GXUMA1 ICE2PCS03GXUMA1 Infineon Technologies INFNS16598-1.pdf Description: IC PFC CTRLR CCM 100KHZ 8DSO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 11V ~ 25V
Frequency - Switching: 100kHz
Mode: Continuous Conduction (CCM)
Supplier Device Package: PG-DSO-8
Part Status: Active
Current - Startup: 450 µA
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ICE2PCS03GXUMA1 ICE2PCS03GXUMA1 Infineon Technologies INFNS16598-1.pdf Description: IC PFC CTRLR CCM 100KHZ 8DSO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 11V ~ 25V
Frequency - Switching: 100kHz
Mode: Continuous Conduction (CCM)
Supplier Device Package: PG-DSO-8
Part Status: Active
Current - Startup: 450 µA
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ICE2PCS05GXUMA1 ICE2PCS05GXUMA1 Infineon Technologies INFNS16600-1.pdf?t.download=true&u=5oefqw Description: IC PFC CTRLR CCM ADJUSTABLE 8DSO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 11V ~ 25V
Frequency - Switching: Adjustable
Mode: Continuous Conduction (CCM)
Supplier Device Package: PG-DSO-8
Part Status: Active
Current - Startup: 450 µA
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100+0.82 EUR
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1000+0.71 EUR
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PSB21525NV2.1-HSCXTE Infineon Technologies SIEMS00941-1.pdf?t.download=true&u=5oefqw Description: HSCX TE COMMS CONTROLLER
Packaging: Bulk
Type: Process, Temperature Controller
Part Status: Active
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IRS2452AM IRS2452AM Infineon Technologies Infineon-IRS2452AM-DS-v01_00-EN.pdf?fileId=5546d462584d1d4a01584ee4f1f00713 Description: IC AMP CLASS D STEREO 32MLPQ
Packaging: Tape & Reel (TR)
Features: Depop
Package / Case: 32-VFQFN Exposed Pad
Output Type: 2-Channel (Stereo)
Mounting Type: Surface Mount
Type: Class D
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 12V
Supplier Device Package: 32-MLPQ (7x7)
Part Status: Active
Produkt ist nicht verfügbar
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IRS2452AM IRS2452AM Infineon Technologies Infineon-IRS2452AM-DS-v01_00-EN.pdf?fileId=5546d462584d1d4a01584ee4f1f00713 Description: IC AMP CLASS D STEREO 32MLPQ
Packaging: Cut Tape (CT)
Features: Depop
Package / Case: 32-VFQFN Exposed Pad
Output Type: 2-Channel (Stereo)
Mounting Type: Surface Mount
Type: Class D
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 12V
Supplier Device Package: 32-MLPQ (7x7)
Part Status: Active
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IRG4PH50KDPBF-INF IRG4PH50KDPBF-INF Infineon Technologies Description: SHORT CIRCUIT RATED ULTRAFAST IG
Packaging: Bulk
Part Status: Active
Produkt ist nicht verfügbar
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IPB80N06S2L07ATMA3 IPB80N06S2L07ATMA3 Infineon Technologies INFNS09574-1.pdf?t.download=true&u=5oefqw Description: MOSFET N-CH 55V 80A TO263-3
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 6.7mOhm @ 60A, 10V
Power Dissipation (Max): 210W (Tc)
Vgs(th) (Max) @ Id: 2V @ 150µA
Supplier Device Package: PG-TO263-3-2
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3160 pF @ 25 V
Qualification: AEC-Q101
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IPB80N06S2L07ATMA3 IPB80N06S2L07ATMA3 Infineon Technologies INFNS09574-1.pdf?t.download=true&u=5oefqw Description: MOSFET N-CH 55V 80A TO263-3
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 6.7mOhm @ 60A, 10V
Power Dissipation (Max): 210W (Tc)
Vgs(th) (Max) @ Id: 2V @ 150µA
Supplier Device Package: PG-TO263-3-2
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3160 pF @ 25 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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IDV03S60C IDV03S60C Infineon Technologies INFNS14319-1.pdf?t.download=true&u=5oefqw Description: DIODE SIL CARB 600V 3A TO220-22
Packaging: Bulk
Package / Case: TO-220-2 Full Pack
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 90pF @ 1V, 1MHz
Current - Average Rectified (Io): 3A (DC)
Supplier Device Package: PG-TO220-2-22
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.9 V @ 3 A
Current - Reverse Leakage @ Vr: 30 µA @ 600 V
auf Bestellung 1500 Stücke:
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IDH04S60CAKSA1 IDH04S60CAKSA1 Infineon Technologies IDH04S60C.pdf Description: DIODE SIL CARB 600V 4A TO220-2-2
Packaging: Bulk
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 130pF @ 1V, 1MHz
Current - Average Rectified (Io): 4A
Supplier Device Package: PG-TO220-2-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.9 V @ 4 A
Current - Reverse Leakage @ Vr: 50 µA @ 600 V
auf Bestellung 18279 Stücke:
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183+2.67 EUR
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IDV06S60C IDV06S60C Infineon Technologies INFNS13768-1.pdf?t.download=true&u=5oefqw Description: RECTIFIER DIODE, SCHOTTKY
auf Bestellung 1034 Stücke:
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147+3.76 EUR
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IDB06S60CATMA2 IDB06S60CATMA2 Infineon Technologies IDB06S60C.pdf Description: DIODE SIL CARB 600V 6A TO263-3-2
Packaging: Bulk
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 280pF @ 1V, 1MHz
Current - Average Rectified (Io): 6A
Supplier Device Package: PG-TO263-3-2
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 6 A
Current - Reverse Leakage @ Vr: 80 µA @ 600 V
auf Bestellung 38373 Stücke:
Lieferzeit 10-14 Tag (e)
127+3.97 EUR
Mindestbestellmenge: 127
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IDH10S60CAKSA1 IDH10S60CAKSA1 Infineon Technologies IDH10S60C.pdf Description: DIODE SIL CARB 600V 10A TO220-2
Packaging: Bulk
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 480pF @ 1V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: PG-TO220-2-2
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 10 A
Current - Reverse Leakage @ Vr: 140 µA @ 600 V
auf Bestellung 5810 Stücke:
Lieferzeit 10-14 Tag (e)
75+6.58 EUR
Mindestbestellmenge: 75
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IDT08S60C IDT08S60C Infineon Technologies INFNS12282-1.pdf?t.download=true&u=5oefqw Description: DIODE SIL CARB 600V 8A TO220-2
Packaging: Bulk
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 310pF @ 1V, 1MHz
Current - Average Rectified (Io): 8A
Supplier Device Package: PG-TO220-2
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 8 A
Current - Reverse Leakage @ Vr: 100 µA @ 600 V
auf Bestellung 3514 Stücke:
Lieferzeit 10-14 Tag (e)
98+4.94 EUR
Mindestbestellmenge: 98
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IDT10S60C IDT10S60C Infineon Technologies INFNS12285-1.pdf?t.download=true&u=5oefqw Description: DIODE SIL CARB 600V 10A TO220-2
Packaging: Bulk
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 480pF @ 1V, 1MHz
Current - Average Rectified (Io): 10A (DC)
Supplier Device Package: PG-TO220-2-2
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 10 A
Current - Reverse Leakage @ Vr: 140 µA @ 600 V
auf Bestellung 1479 Stücke:
Lieferzeit 10-14 Tag (e)
79+6.28 EUR
Mindestbestellmenge: 79
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IDT12S60C IDT12S60C Infineon Technologies INFNS12248-1.pdf?t.download=true&u=5oefqw Description: DIODE SIL CARB 600V 12A TO220-2
auf Bestellung 786 Stücke:
Lieferzeit 10-14 Tag (e)
71+7.05 EUR
Mindestbestellmenge: 71
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IDH06S60C IDH06S60C Infineon Technologies INFNS19762-1.pdf?t.download=true&u=5oefqw Description: RECTIFIER DIODE, SCHOTTKY
Produkt ist nicht verfügbar
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SABC165LMHATR INFNS01617-1.pdf?t.download=true&u=5oefqw
SABC165LMHATR
Hersteller: Infineon Technologies
Description: LEGACY 16-BIT MCU
Packaging: Bulk
Package / Case: 100-BQFP
Mounting Type: Surface Mount
Speed: 20MHz
RAM Size: 2K x 8
Operating Temperature: 0°C ~ 70°C (TA)
Oscillator Type: External, Internal
Program Memory Type: ROMless
Core Processor: C166
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 4.5V ~ 5.5V
Connectivity: ASC, EBI/EMI, SPI, SSC, UART/USART
Peripherals: POR, PWM, WDT
Supplier Device Package: P-MQFP-100
Part Status: Active
Number of I/O: 77
Produkt ist nicht verfügbar
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SAB-C165-L25F INFNS21451-1.pdf?t.download=true&u=5oefqw
SAB-C165-L25F
Hersteller: Infineon Technologies
Description: LEGACY 16-BIT MCU
Packaging: Bulk
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Speed: 25MHz
RAM Size: 2K x 8
Operating Temperature: 0°C ~ 70°C (TA)
Oscillator Type: External, Internal
Program Memory Type: ROMless
Core Processor: C166
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 4.5V ~ 5.5V
Connectivity: ASC, EBI/EMI, SPI, SSC, UART/USART
Peripherals: POR, PWM, WDT
Supplier Device Package: PG-TQFP-100
Part Status: Active
Number of I/O: 77
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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SAB-C165-L25FHA INFNS01617-1.pdf?t.download=true&u=5oefqw
SAB-C165-L25FHA
Hersteller: Infineon Technologies
Description: LEGACY 16-BIT MCU
Packaging: Bulk
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Speed: 25MHz
RAM Size: 2K x 8
Operating Temperature: 0°C ~ 70°C (TA)
Oscillator Type: External, Internal
Program Memory Type: ROMless
Core Processor: C166
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 4.5V ~ 5.5V
Connectivity: ASC, EBI/EMI, SPI, SSC, UART/USART
Peripherals: POR, PWM, WDT
Supplier Device Package: PG-TQFP-100-1
Part Status: Active
Number of I/O: 77
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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C165L25FHABXUMA1 c165_ds_v20_2000_12_7.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a304412b407950112b4362c3764dc
C165L25FHABXUMA1
Hersteller: Infineon Technologies
Description: IC MCU 16BIT ROMLESS 100TQFP
Packaging: Bulk
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Speed: 25MHz
RAM Size: 2K x 8
Operating Temperature: 0°C ~ 70°C (TA)
Oscillator Type: External
Program Memory Type: ROMless
Core Processor: C166
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 4.5V ~ 5.5V
Connectivity: EBI/EMI, SPI, UART/USART
Peripherals: POR, PWM, WDT
Supplier Device Package: PG-TQFP-100
Part Status: Obsolete
Number of I/O: 77
auf Bestellung 100 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
24+22.11 EUR
Mindestbestellmenge: 24
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SABC165LFHABXUMA1 INFNS01617-1.pdf?t.download=true&u=5oefqw
SABC165LFHABXUMA1
Hersteller: Infineon Technologies
Description: LEGACY 16-BIT MCU
Packaging: Bulk
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Speed: 20MHz
RAM Size: 2K x 8
Operating Temperature: 0°C ~ 70°C (TA)
Oscillator Type: External, Internal
Program Memory Type: ROMless
Core Processor: C166
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 4.5V ~ 5.5V
Connectivity: ASC, EBI/EMI, SPI, SSC, UART/USART
Peripherals: POR, PWM, WDT
Supplier Device Package: PG-TQFP-100
Part Status: Active
Number of I/O: 77
DigiKey Programmable: Not Verified
auf Bestellung 154 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
20+24.39 EUR
Mindestbestellmenge: 20
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SAB-C165LFHABXUMA1 INFNS01617-1.pdf?t.download=true&u=5oefqw
SAB-C165LFHABXUMA1
Hersteller: Infineon Technologies
Description: LEGACY 16 BIT MICROCONTROLLER
Packaging: Bulk
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Speed: 20MHz
RAM Size: 2K x 8
Operating Temperature: 0°C ~ 70°C (TA)
Oscillator Type: External, Internal
Program Memory Type: ROMless
Core Processor: C166
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 4.5V ~ 5.5V
Connectivity: ASC, EBI/EMI, SPI, SSC, UART/USART
Peripherals: POR, PWM, WDT
Supplier Device Package: PG-TQFP-100
Part Status: Active
Number of I/O: 77
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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SAB-C165LFHABXQMA1 Infineon-C165-DS-v02_00-en[8].pdf?fileId=db3a304412b407950112b43a49a66fd7
SAB-C165LFHABXQMA1
Hersteller: Infineon Technologies
Description: LEGACY 16 BIT MICROCONTROLLER
Packaging: Bulk
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Speed: 20MHz
RAM Size: 2K x 8
Operating Temperature: 0°C ~ 70°C (TA)
Oscillator Type: External, Internal
Program Memory Type: ROMless
Core Processor: C166
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 4.5V ~ 5.5V
Connectivity: ASC, EBI/EMI, SPI, SSC, UART/USART
Peripherals: POR, PWM, WDT
Supplier Device Package: PG-TQFP-100
Part Status: Active
Number of I/O: 77
DigiKey Programmable: Not Verified
auf Bestellung 103 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
20+24.71 EUR
Mindestbestellmenge: 20
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SABC165LF3VHABXUMA1 INFNS01617-1.pdf?t.download=true&u=5oefqw
SABC165LF3VHABXUMA1
Hersteller: Infineon Technologies
Description: LEGACY 16-BIT MCU
Packaging: Bulk
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Speed: 20MHz
RAM Size: 2K x 8
Operating Temperature: 0°C ~ 70°C (TA)
Oscillator Type: External, Internal
Program Memory Type: ROMless
Core Processor: C166
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 3.6V
Connectivity: ASC, EBI/EMI, SPI, SSC, UART/USART
Peripherals: POR, PWM, WDT
Supplier Device Package: PG-TQFP-100
Part Status: Active
Number of I/O: 77
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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SAB-C165-LF INFNS12141-1.pdf?t.download=true&u=5oefqw
SAB-C165-LF
Hersteller: Infineon Technologies
Description: LEGACY 16-BIT MCU
Packaging: Bulk
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Speed: 20MHz
RAM Size: 2K x 8
Operating Temperature: 0°C ~ 70°C (TA)
Oscillator Type: External, Internal
Program Memory Type: ROMless
Core Processor: C166
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 4.5V ~ 5.5V
Connectivity: ASC, EBI/EMI, SPI, SSC, UART/USART
Peripherals: POR, PWM, WDT
Supplier Device Package: PG-TQFP-100
Part Status: Active
Number of I/O: 77
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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SABC165LMHABXQMA1
Hersteller: Infineon Technologies
Description: LEGACY 16-BIT MCU
Produkt ist nicht verfügbar
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AUXYBFP3306
Hersteller: Infineon Technologies
Description: MOSFET N-CH 60V TO-247AC
Packaging: Tube
Part Status: Obsolete
Produkt ist nicht verfügbar
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BAS4004E6433HTMA1 INFNS19700-1.pdf?t.download=true&u=5oefqw
BAS4004E6433HTMA1
Hersteller: Infineon Technologies
Description: DIODE ARR SCHOTT 40V 120MA SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 100 ps
Technology: Schottky
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 120mA (DC)
Supplier Device Package: PG-SOT23
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 40 mA
Current - Reverse Leakage @ Vr: 1 µA @ 30 V
auf Bestellung 26013 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
56+0.32 EUR
79+0.22 EUR
100+0.18 EUR
500+0.13 EUR
1000+0.11 EUR
2000+0.1 EUR
5000+0.09 EUR
Mindestbestellmenge: 56
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BSP92PL6327 INFNS16528-1.pdf?t.download=true&u=5oefqw
BSP92PL6327
Hersteller: Infineon Technologies
Description: P-CHANNEL POWER MOSFET
auf Bestellung 283295 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1501+0.32 EUR
Mindestbestellmenge: 1501
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BSZ084N08NS5ATMA1 Infineon-BSZ084N08NS5-DS-v02_00-EN.pdf?fileId=5546d4624a75e5f1014aca9007801edb
BSZ084N08NS5ATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 80V 40A TSDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 8.4mOhm @ 20A, 10V
Power Dissipation (Max): 63W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 31µA
Supplier Device Package: PG-TSDSON-8-FL
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1820 pF @ 40 V
auf Bestellung 30000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5000+0.92 EUR
Mindestbestellmenge: 5000
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BC 817-40 E6433 4a-BC-817-40-E6433.pdf
BC 817-40 E6433
Hersteller: Infineon Technologies
Description: TRANS NPN 45V 0.5A PG-SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 100mA, 1V
Frequency - Transition: 170MHz
Supplier Device Package: PG-SOT23
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 330 mW
Produkt ist nicht verfügbar
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CYW20737A1KML2GT Infineon-CYW20737_Single-Chip_Bluetooth_Low_Energy-Only_System-On-Chip-DataSheet-v05_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee20b3d6851&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
CYW20737A1KML2GT
Hersteller: Infineon Technologies
Description: IC RF TXRX+MCU BLUETOOTH 32VFQFN
Packaging: Tape & Reel (TR)
Package / Case: 32-VFQFN Exposed Pad
Sensitivity: -94dBm
Mounting Type: Surface Mount
Frequency: 2.4GHz
Memory Size: 320kB ROM, 60kB RAM
Type: TxRx + MCU
Operating Temperature: -30°C ~ 85°C
Voltage - Supply: 3.8V
Power - Output: 4dBm
Protocol: Bluetooth v4.0
Current - Receiving: 9.8mA
Data Rate (Max): 1Mbps
Current - Transmitting: 9.1mA
Supplier Device Package: 32-QFN (5x5)
GPIO: 14
Modulation: GFSK
RF Family/Standard: Bluetooth
Serial Interfaces: I2C, SPI, UART
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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BAT15099E6433HTMA1 INFNS15420-1.pdf?t.download=true&u=5oefqw
BAT15099E6433HTMA1
Hersteller: Infineon Technologies
Description: DIODE SCHOTTKY 4V 100MW SOT143-4
Packaging: Cut Tape (CT)
Package / Case: TO-253-4, TO-253AA
Diode Type: Schottky - 2 Independent
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 0.35pF @ 0V, 1MHz
Voltage - Peak Reverse (Max): 4V
Supplier Device Package: PG-SOT-143-3D
Part Status: Active
Current - Max: 110 mA
Power Dissipation (Max): 100 mW
auf Bestellung 1222 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
12+1.51 EUR
19+0.94 EUR
100+0.61 EUR
500+0.47 EUR
1000+0.43 EUR
Mindestbestellmenge: 12
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BAR6302LE6327XTMA1 INFNS15694-1.pdf?t.download=true&u=5oefqw
BAR6302LE6327XTMA1
Hersteller: Infineon Technologies
Description: RF DIODE PIN 50V 250MW TSLP-2
Packaging: Cut Tape (CT)
Package / Case: SOD-882
Diode Type: PIN - Single
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 0.3pF @ 5V, 1MHz
Resistance @ If, F: 1Ohm @ 10mA, 100MHz
Voltage - Peak Reverse (Max): 50V
Supplier Device Package: PG-TSLP-2-1
Part Status: Active
Current - Max: 100 mA
Power Dissipation (Max): 250 mW
auf Bestellung 6417 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
77+0.23 EUR
117+0.15 EUR
133+0.13 EUR
157+0.11 EUR
250+0.1 EUR
500+0.097 EUR
1000+0.092 EUR
2500+0.087 EUR
5000+0.084 EUR
Mindestbestellmenge: 77
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BAR6305WH6327XTSA1 INFNS15694-1.pdf?t.download=true&u=5oefqw
BAR6305WH6327XTSA1
Hersteller: Infineon Technologies
Description: RF DIODE PIN 50V 250MW PG-SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Diode Type: PIN - 1 Pair Common Cathode
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 0.3pF @ 5V, 1MHz
Resistance @ If, F: 1Ohm @ 10mA, 100MHz
Voltage - Peak Reverse (Max): 50V
Supplier Device Package: PG-SOT23
Part Status: Active
Current - Max: 100 mA
Power Dissipation (Max): 250 mW
auf Bestellung 8195 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
67+0.26 EUR
102+0.17 EUR
116+0.15 EUR
137+0.13 EUR
250+0.12 EUR
500+0.11 EUR
Mindestbestellmenge: 67
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BAR6305E6327HTSA1 INFNS15694-1.pdf?t.download=true&u=5oefqw
BAR6305E6327HTSA1
Hersteller: Infineon Technologies
Description: RF DIODE PIN 50V 250MW PG-SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Diode Type: PIN - 1 Pair Common Cathode
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 0.3pF @ 5V, 1MHz
Resistance @ If, F: 1Ohm @ 10mA, 100MHz
Voltage - Peak Reverse (Max): 50V
Supplier Device Package: PG-SOT23
Part Status: Active
Current - Max: 100 mA
Power Dissipation (Max): 250 mW
auf Bestellung 4197 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
42+0.42 EUR
61+0.29 EUR
69+0.26 EUR
100+0.22 EUR
250+0.2 EUR
500+0.19 EUR
1000+0.18 EUR
Mindestbestellmenge: 42
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CY8C201A0-LDX2I ?utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
CY8C201A0-LDX2I
Hersteller: Infineon Technologies
Description: IC CAPSENSE EXP 10 I/O 16QFN
Packaging: Bulk
Package / Case: 16-UFQFN
Mounting Type: Surface Mount
Interface: I2C
Type: Buttons, Slider
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2.4V ~ 5.25V
Current - Supply: 1.5mA
Number of Inputs: Up to 6
Supplier Device Package: 16-QFN (3x3)
Proximity Detection: No
LED Driver Channels: Up to 5
DigiKey Programmable: Not Verified
auf Bestellung 4955 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
221+2.28 EUR
Mindestbestellmenge: 221
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FF450R12KE4EHOSA1 Infineon-FF450R12KE4_E-DS-v02_00-en_de.pdf?fileId=db3a304344d727a80144dfdce80e0c42
FF450R12KE4EHOSA1
Hersteller: Infineon Technologies
Description: IGBT MOD 1200V 520A 2400W
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: 2 Independent
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 450A
NTC Thermistor: No
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 520 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 2400 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 28 nF @ 25 V
auf Bestellung 19 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+240.57 EUR
10+212.82 EUR
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PEB4365T-SV1.1
Hersteller: Infineon Technologies
Description: TWIN SUBSCRIBER LINE INTERFACE
auf Bestellung 777 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
36+15.01 EUR
Mindestbestellmenge: 36
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IRF8707TRPBF-1 IRF8707PbF-1_6-23-14.pdf
IRF8707TRPBF-1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 30V 11A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta)
Rds On (Max) @ Id, Vgs: 11.9mOhm @ 11A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 2.35V @ 25µA
Supplier Device Package: 8-SOIC
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 9.3 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 760 pF @ 15 V
Produkt ist nicht verfügbar
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KIT6W13VP7950VTOBO1 Infineon-General_description_KIT_6W_13V_P7_950V-AdditionalTechnicalInformation-v03_00-EN.pdf?fileId=5546d462724fa97201725020678f0582
KIT6W13VP7950VTOBO1
Hersteller: Infineon Technologies
Description: KIT_6W_13V_P7_950V BIAS BOARD
Packaging: Bulk
Voltage - Output: 12V
Voltage - Input: 120V ~ 440V
Current - Output: 500mA
Regulator Topology: Flyback
Board Type: Fully Populated
Utilized IC / Part: ICE5QSAG, IPU95R3K7P7
Supplied Contents: Board(s)
Main Purpose: DC/DC Converter
Outputs and Type: 1, Isolated
Part Status: Active
Power - Output: 6 W
auf Bestellung 2 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+64.01 EUR
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EVAL3K3WLLCHBCFD7TOBO1 Infineon-Evaluationboard_EVAL_3K3W_LLC_HB_CFD7-ApplicationNotes-v01_00-EN.pdf?fileId=5546d4626cb27db2016d3a60583725dc
EVAL3K3WLLCHBCFD7TOBO1
Hersteller: Infineon Technologies
Description: EVAL BOARD FOR ICE5QSAG XMC4200
Packaging: Box
Voltage - Output: 43.5V ~ 59.5V
Voltage - Input: 350V ~ 415V
Regulator Topology: Flyback
Board Type: Fully Populated
Utilized IC / Part: ICE5QSAG, XMC4200
Supplied Contents: Board(s)
Main Purpose: DC/DC Converter
Outputs and Type: 1 Isolated Output
Power - Output: 3.3kW
Contents: Board(s)
auf Bestellung 3 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+819.05 EUR
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IPB60R090CFD7ATMA1 Infineon-IPB60R090CFD7-DataSheet-v02_00-EN.pdf?fileId=5546d4626b2d8e69016bb2452db11936
IPB60R090CFD7ATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 600V 25A TO263-3
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Rds On (Max) @ Id, Vgs: 90mOhm @ 11.4A, 10V
Power Dissipation (Max): 124W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 570µA
Supplier Device Package: PG-TO263-3-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2103 pF @ 400 V
Produkt ist nicht verfügbar
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PEF20954HTV1.1
PEF20954HTV1.1
Hersteller: Infineon Technologies
Description: SIDEC SMART INTEGRATED DIGITAL E
Packaging: Bulk
Package / Case: 144-LQFP
Mounting Type: Surface Mount
Function: Smart Integrated Digital Echo Canceller (SIDEC)
Interface: PCM, Serial, UCC
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 3V ~ 3.6V
Current - Supply: 350mA
Supplier Device Package: PG-TQFP-144-2
Part Status: Active
Number of Circuits: 1
auf Bestellung 1620 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+183.08 EUR
Mindestbestellmenge: 2
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IPG20N04S4L07AATMA1 Infineon-IPG20N04S4L_07A-DS-v01_00-en.pdf?fileId=db3a30433d346a2d013d454a0c9d515c
IPG20N04S4L07AATMA1
Hersteller: Infineon Technologies
Description: MOSFET 2N-CH 40V 20A 8TDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount, Wettable Flank
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 65W
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 20A
Input Capacitance (Ciss) (Max) @ Vds: 3980pF @ 25V
Rds On (Max) @ Id, Vgs: 7.2mOhm @ 17A, 10V
Gate Charge (Qg) (Max) @ Vgs: 50nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.2V @ 30µA
Supplier Device Package: PG-TDSON-8-10
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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BSZ018NE2LSATMA1 BSZ018NE2LS_Rev+2.1.pdf?folderId=db3a304313b8b5a60113cee8763b02d7&fileId=db3a30432ee77f32012f072b132a57fc
BSZ018NE2LSATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 25V 23A/40A TSDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 23A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs: 1.8mOhm @ 30A, 10V
Power Dissipation (Max): 2.1W (Ta), 69W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TSDSON-8-FL
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2800 pF @ 12 V
Produkt ist nicht verfügbar
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BSZ018NE2LSATMA1 BSZ018NE2LS_Rev+2.1.pdf?folderId=db3a304313b8b5a60113cee8763b02d7&fileId=db3a30432ee77f32012f072b132a57fc
BSZ018NE2LSATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 25V 23A/40A TSDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 23A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs: 1.8mOhm @ 30A, 10V
Power Dissipation (Max): 2.1W (Ta), 69W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TSDSON-8-FL
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2800 pF @ 12 V
auf Bestellung 897 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
8+2.46 EUR
12+1.56 EUR
100+1.04 EUR
500+0.82 EUR
Mindestbestellmenge: 8
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AUIRFS3207Z-INF INFN-S-A0004165566-1.pdf?t.download=true&u=5oefqw
AUIRFS3207Z-INF
Hersteller: Infineon Technologies
Description: MOSFET N-CH 75V 120A D2PAK
Packaging: Bulk
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 4.1mOhm @ 75A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 150µA
Supplier Device Package: D2PAK
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6920 pF @ 50 V
Produkt ist nicht verfügbar
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IPD90P04P405ATMA2 Infineon-IPD90P04P4-05-DataSheet-v01_02-EN.pdf?fileId=db3a304329a0f6ee0129dbba2b4d5c79
IPD90P04P405ATMA2
Hersteller: Infineon Technologies
Description: MOSFET P-CH 40V 90A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 4.7mOhm @ 90A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PG-TO252-3-313
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 154 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10300 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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IPD90P04P405ATMA2 Infineon-IPD90P04P4-05-DataSheet-v01_02-EN.pdf?fileId=db3a304329a0f6ee0129dbba2b4d5c79
IPD90P04P405ATMA2
Hersteller: Infineon Technologies
Description: MOSFET P-CH 40V 90A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 4.7mOhm @ 90A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PG-TO252-3-313
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 154 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10300 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 1609 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5+3.98 EUR
10+2.41 EUR
100+1.79 EUR
500+1.45 EUR
Mindestbestellmenge: 5
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BC807-25B5000 INFNS11647-1.pdf?t.download=true&u=5oefqw
BC807-25B5000
Hersteller: Infineon Technologies
Description: TRANS PNP 45V 0.5A PG-SOT23
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 100mA, 1V
Frequency - Transition: 200MHz
Supplier Device Package: PG-SOT23
Part Status: Active
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 330 mW
auf Bestellung 1425000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
8955+0.045 EUR
Mindestbestellmenge: 8955
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BC807-25B5003 INFNS11647-1.pdf?t.download=true&u=5oefqw
BC807-25B5003
Hersteller: Infineon Technologies
Description: TRANS PNP 45V 0.5A PG-SOT23-3-11
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 100mA, 1V
Frequency - Transition: 200MHz
Supplier Device Package: PG-SOT23-3-11
Part Status: Active
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 330 mW
auf Bestellung 147000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
8955+0.045 EUR
Mindestbestellmenge: 8955
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BSO303SPH INFNS16523-1.pdf?t.download=true&u=5oefqw
BSO303SPH
Hersteller: Infineon Technologies
Description: 7.2A, 30V, 0.021OHM, P-CHANNEL,
Packaging: Bulk
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 7.2A (Ta)
Rds On (Max) @ Id, Vgs: 21mOhm @ 9.1A, 10V
Power Dissipation (Max): 1.56W (Ta)
Vgs(th) (Max) @ Id: 2V @ 100µA
Supplier Device Package: PG-DSO-8-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2330 pF @ 25 V
auf Bestellung 2561 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
866+0.56 EUR
Mindestbestellmenge: 866
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BSO303SP INFNS11933-1.pdf?t.download=true&u=5oefqw
BSO303SP
Hersteller: Infineon Technologies
Description: P-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 7.2A (Ta)
Rds On (Max) @ Id, Vgs: 21mOhm @ 9.1A, 10V
Power Dissipation (Max): 1.56W (Ta)
Vgs(th) (Max) @ Id: 2V @ 100µA
Supplier Device Package: PG-DSO-8-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2330 pF @ 25 V
auf Bestellung 3363 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
751+0.7 EUR
Mindestbestellmenge: 751
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BSO303SPNTMA1 BSO303SP_080102.pdf
BSO303SPNTMA1
Hersteller: Infineon Technologies
Description: MOSFET P-CH 30V 8.9A 8DSO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 8.9A (Ta)
Rds On (Max) @ Id, Vgs: 21mOhm @ 8.9A, 10V
Power Dissipation (Max): 2.35W (Ta)
Vgs(th) (Max) @ Id: 2V @ 100µA
Supplier Device Package: PG-DSO-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 69 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1754 pF @ 25 V
Produkt ist nicht verfügbar
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PEB4265TV1.2 INTL-S-A0006019977-1.pdf?t.download=true&u=5oefqw
Hersteller: Infineon Technologies
Description: DUSLIC DUAL CHANNEL SUBSCRIBER L
Packaging: Bulk
auf Bestellung 269 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
56+9.05 EUR
Mindestbestellmenge: 56
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ICE2PCS06GXUMA1 ProductDatasheetICE2PCS06_v1.1+Mar2010.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a3043327f13e3013285ff4ecb2e77
ICE2PCS06GXUMA1
Hersteller: Infineon Technologies
Description: IC PFC CTRLR CCM 70KHZ 8DSO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 11V ~ 26V
Frequency - Switching: 58kHz ~ 70kHz
Mode: Continuous Conduction (CCM)
Supplier Device Package: PG-DSO-8
Part Status: Active
Current - Startup: 450 µA
Produkt ist nicht verfügbar
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ICE2PCS06GXUMA1 ProductDatasheetICE2PCS06_v1.1+Mar2010.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a3043327f13e3013285ff4ecb2e77
ICE2PCS06GXUMA1
Hersteller: Infineon Technologies
Description: IC PFC CTRLR CCM 70KHZ 8DSO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 11V ~ 26V
Frequency - Switching: 58kHz ~ 70kHz
Mode: Continuous Conduction (CCM)
Supplier Device Package: PG-DSO-8
Part Status: Active
Current - Startup: 450 µA
Produkt ist nicht verfügbar
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ICE2PCS03GXUMA1 INFNS16598-1.pdf
ICE2PCS03GXUMA1
Hersteller: Infineon Technologies
Description: IC PFC CTRLR CCM 100KHZ 8DSO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 11V ~ 25V
Frequency - Switching: 100kHz
Mode: Continuous Conduction (CCM)
Supplier Device Package: PG-DSO-8
Part Status: Active
Current - Startup: 450 µA
Produkt ist nicht verfügbar
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ICE2PCS03GXUMA1 INFNS16598-1.pdf
ICE2PCS03GXUMA1
Hersteller: Infineon Technologies
Description: IC PFC CTRLR CCM 100KHZ 8DSO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 11V ~ 25V
Frequency - Switching: 100kHz
Mode: Continuous Conduction (CCM)
Supplier Device Package: PG-DSO-8
Part Status: Active
Current - Startup: 450 µA
auf Bestellung 2937 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
12+1.58 EUR
16+1.14 EUR
25+1.03 EUR
100+0.91 EUR
250+0.85 EUR
500+0.82 EUR
1000+0.79 EUR
Mindestbestellmenge: 12
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ICE2PCS05GXUMA1 INFNS16600-1.pdf?t.download=true&u=5oefqw
ICE2PCS05GXUMA1
Hersteller: Infineon Technologies
Description: IC PFC CTRLR CCM ADJUSTABLE 8DSO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 11V ~ 25V
Frequency - Switching: Adjustable
Mode: Continuous Conduction (CCM)
Supplier Device Package: PG-DSO-8
Part Status: Active
Current - Startup: 450 µA
auf Bestellung 3661 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
13+1.44 EUR
17+1.04 EUR
25+0.94 EUR
100+0.82 EUR
250+0.77 EUR
500+0.74 EUR
1000+0.71 EUR
Mindestbestellmenge: 13
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PSB21525NV2.1-HSCXTE SIEMS00941-1.pdf?t.download=true&u=5oefqw
Hersteller: Infineon Technologies
Description: HSCX TE COMMS CONTROLLER
Packaging: Bulk
Type: Process, Temperature Controller
Part Status: Active
auf Bestellung 3560 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
46+11.65 EUR
Mindestbestellmenge: 46
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IRS2452AM Infineon-IRS2452AM-DS-v01_00-EN.pdf?fileId=5546d462584d1d4a01584ee4f1f00713
IRS2452AM
Hersteller: Infineon Technologies
Description: IC AMP CLASS D STEREO 32MLPQ
Packaging: Tape & Reel (TR)
Features: Depop
Package / Case: 32-VFQFN Exposed Pad
Output Type: 2-Channel (Stereo)
Mounting Type: Surface Mount
Type: Class D
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 12V
Supplier Device Package: 32-MLPQ (7x7)
Part Status: Active
Produkt ist nicht verfügbar
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IRS2452AM Infineon-IRS2452AM-DS-v01_00-EN.pdf?fileId=5546d462584d1d4a01584ee4f1f00713
IRS2452AM
Hersteller: Infineon Technologies
Description: IC AMP CLASS D STEREO 32MLPQ
Packaging: Cut Tape (CT)
Features: Depop
Package / Case: 32-VFQFN Exposed Pad
Output Type: 2-Channel (Stereo)
Mounting Type: Surface Mount
Type: Class D
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 12V
Supplier Device Package: 32-MLPQ (7x7)
Part Status: Active
auf Bestellung 4155 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+10.23 EUR
10+7.86 EUR
25+7.27 EUR
100+6.63 EUR
250+6.32 EUR
500+6.13 EUR
1000+5.98 EUR
Mindestbestellmenge: 2
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IRG4PH50KDPBF-INF
IRG4PH50KDPBF-INF
Hersteller: Infineon Technologies
Description: SHORT CIRCUIT RATED ULTRAFAST IG
Packaging: Bulk
Part Status: Active
Produkt ist nicht verfügbar
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IPB80N06S2L07ATMA3 INFNS09574-1.pdf?t.download=true&u=5oefqw
IPB80N06S2L07ATMA3
Hersteller: Infineon Technologies
Description: MOSFET N-CH 55V 80A TO263-3
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 6.7mOhm @ 60A, 10V
Power Dissipation (Max): 210W (Tc)
Vgs(th) (Max) @ Id: 2V @ 150µA
Supplier Device Package: PG-TO263-3-2
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3160 pF @ 25 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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IPB80N06S2L07ATMA3 INFNS09574-1.pdf?t.download=true&u=5oefqw
IPB80N06S2L07ATMA3
Hersteller: Infineon Technologies
Description: MOSFET N-CH 55V 80A TO263-3
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 6.7mOhm @ 60A, 10V
Power Dissipation (Max): 210W (Tc)
Vgs(th) (Max) @ Id: 2V @ 150µA
Supplier Device Package: PG-TO263-3-2
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3160 pF @ 25 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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IDV03S60C INFNS14319-1.pdf?t.download=true&u=5oefqw
IDV03S60C
Hersteller: Infineon Technologies
Description: DIODE SIL CARB 600V 3A TO220-22
Packaging: Bulk
Package / Case: TO-220-2 Full Pack
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 90pF @ 1V, 1MHz
Current - Average Rectified (Io): 3A (DC)
Supplier Device Package: PG-TO220-2-22
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.9 V @ 3 A
Current - Reverse Leakage @ Vr: 30 µA @ 600 V
auf Bestellung 1500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
270+1.79 EUR
Mindestbestellmenge: 270
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IDH04S60CAKSA1 IDH04S60C.pdf
IDH04S60CAKSA1
Hersteller: Infineon Technologies
Description: DIODE SIL CARB 600V 4A TO220-2-2
Packaging: Bulk
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 130pF @ 1V, 1MHz
Current - Average Rectified (Io): 4A
Supplier Device Package: PG-TO220-2-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.9 V @ 4 A
Current - Reverse Leakage @ Vr: 50 µA @ 600 V
auf Bestellung 18279 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
183+2.67 EUR
Mindestbestellmenge: 183
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IDV06S60C INFNS13768-1.pdf?t.download=true&u=5oefqw
IDV06S60C
Hersteller: Infineon Technologies
Description: RECTIFIER DIODE, SCHOTTKY
auf Bestellung 1034 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
147+3.76 EUR
Mindestbestellmenge: 147
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IDB06S60CATMA2 IDB06S60C.pdf
IDB06S60CATMA2
Hersteller: Infineon Technologies
Description: DIODE SIL CARB 600V 6A TO263-3-2
Packaging: Bulk
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 280pF @ 1V, 1MHz
Current - Average Rectified (Io): 6A
Supplier Device Package: PG-TO263-3-2
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 6 A
Current - Reverse Leakage @ Vr: 80 µA @ 600 V
auf Bestellung 38373 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
127+3.97 EUR
Mindestbestellmenge: 127
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IDH10S60CAKSA1 IDH10S60C.pdf
IDH10S60CAKSA1
Hersteller: Infineon Technologies
Description: DIODE SIL CARB 600V 10A TO220-2
Packaging: Bulk
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 480pF @ 1V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: PG-TO220-2-2
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 10 A
Current - Reverse Leakage @ Vr: 140 µA @ 600 V
auf Bestellung 5810 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
75+6.58 EUR
Mindestbestellmenge: 75
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IDT08S60C INFNS12282-1.pdf?t.download=true&u=5oefqw
IDT08S60C
Hersteller: Infineon Technologies
Description: DIODE SIL CARB 600V 8A TO220-2
Packaging: Bulk
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 310pF @ 1V, 1MHz
Current - Average Rectified (Io): 8A
Supplier Device Package: PG-TO220-2
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 8 A
Current - Reverse Leakage @ Vr: 100 µA @ 600 V
auf Bestellung 3514 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
98+4.94 EUR
Mindestbestellmenge: 98
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IDT10S60C INFNS12285-1.pdf?t.download=true&u=5oefqw
IDT10S60C
Hersteller: Infineon Technologies
Description: DIODE SIL CARB 600V 10A TO220-2
Packaging: Bulk
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 480pF @ 1V, 1MHz
Current - Average Rectified (Io): 10A (DC)
Supplier Device Package: PG-TO220-2-2
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 10 A
Current - Reverse Leakage @ Vr: 140 µA @ 600 V
auf Bestellung 1479 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
79+6.28 EUR
Mindestbestellmenge: 79
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IDT12S60C INFNS12248-1.pdf?t.download=true&u=5oefqw
IDT12S60C
Hersteller: Infineon Technologies
Description: DIODE SIL CARB 600V 12A TO220-2
auf Bestellung 786 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
71+7.05 EUR
Mindestbestellmenge: 71
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IDH06S60C INFNS19762-1.pdf?t.download=true&u=5oefqw
IDH06S60C
Hersteller: Infineon Technologies
Description: RECTIFIER DIODE, SCHOTTKY
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
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