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BAS7004SH6327XTSA1 BAS7004SH6327XTSA1 Infineon Technologies INFNS30154-1.pdf?t.download=true&u=5oefqw Description: DIODE ARR SCHOTT 70V SOT363-PO
Packaging: Cut Tape (CT)
Package / Case: 6-VSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 100 ps
Technology: Schottky
Diode Configuration: 2 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 70mA (DC)
Supplier Device Package: PG-SOT363-PO
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 70 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 15 mA
Current - Reverse Leakage @ Vr: 100 nA @ 50 V
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TT142N16KOFHPSA1 TT142N16KOFHPSA1 Infineon Technologies TT142N.pdf Description: SCR MODULE 1.6KV 230A MODULE
Voltage - Off State: 1.6 kV
Voltage - Gate Trigger (Vgt) (Max): 2 V
Current - On State (It (AV)) (Max): 142 A
Number of SCRs, Diodes: 2 SCRs
Current - Non Rep. Surge 50, 60Hz (Itsm): 4800A @ 50Hz
Current - Gate Trigger (Igt) (Max): 150 mA
Current - Hold (Ih) (Max): 200 mA
Structure: Series Connection - All SCRs
Operating Temperature: -40°C ~ 125°C
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Bulk
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TMOSP12034 TMOSP12034 Infineon Technologies IRSDS11200-1.pdf?t.download=true&u=5oefqw Description: N-CHANNEL POWER MOSFET
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TLE8458GV33XUMA2 TLE8458GV33XUMA2 Infineon Technologies Infineon-TLE8458-DS-v01_00-EN.pdf?fileId=5546d46259d9a4bf015a3d2da4b66071 Description: IC TRANSCEIVER FULL 1/1 DSO-8
Part Status: Not For New Designs
Duplex: Full
Supplier Device Package: PG-DSO-8-16
Protocol: LINbus
Data Rate: 20kbps
Number of Drivers/Receivers: 1/1
Voltage - Supply: 7V ~ 27V
Operating Temperature: -40°C ~ 150°C
Type: Transceiver
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
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TLE8458GXUMA2 TLE8458GXUMA2 Infineon Technologies Infineon-TLE8458-DS-v01_00-EN.pdf?fileId=5546d46259d9a4bf015a3d2da4b66071 Description: IC TRANSCEIVER FULL 1/1 DSO-8
Part Status: Not For New Designs
Duplex: Full
Supplier Device Package: PG-DSO-8-16
Protocol: LINbus
Data Rate: 20kbps
Number of Drivers/Receivers: 1/1
Voltage - Supply: 7V ~ 27V
Operating Temperature: -40°C ~ 150°C
Type: Transceiver
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
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BCW61AE6327 BCW61AE6327 Infineon Technologies INFNS11623-1.pdf?t.download=true&u=5oefqw Description: TRANS PNP 32V 0.1A SOT23
Part Status: Active
Supplier Device Package: PG-SOT23
Frequency - Transition: 250MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 5V
Current - Collector Cutoff (Max): 20nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 550mV @ 1.25mA, 50mA
Operating Temperature: 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Bulk
Power - Max: 330 mW
Voltage - Collector Emitter Breakdown (Max): 32 V
Current - Collector (Ic) (Max): 100 mA
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BCW61A BCW61A Infineon Technologies INFNS17211-1.pdf?t.download=true&u=5oefqw Description: TRANS PNP 32V 0.1A SOT23
Power - Max: 330 mW
Voltage - Collector Emitter Breakdown (Max): 32 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Active
Supplier Device Package: PG-SOT23
Frequency - Transition: 250MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 5V
Current - Collector Cutoff (Max): 20nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 550mV @ 1.25mA, 50mA
Operating Temperature: 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Bulk
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CYRF89435-68LTXC CYRF89435-68LTXC Infineon Technologies CYRF89435.pdf Description: IC RF TXRX+MCU ISM>1GHZ 68VFQFN
Packaging: Tray
Package / Case: 68-VFQFN Exposed Pad
Sensitivity: -87dBm
Mounting Type: Surface Mount
Frequency: 2.4GHz
Memory Size: 32kB Flash, 2kB SRAM
Type: TxRx + MCU
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 1.9V ~ 3.6V
Power - Output: 1dBm
Current - Receiving: 18mA
Data Rate (Max): 1Mbps
Current - Transmitting: 13.7mA ~ 18.5mA
Supplier Device Package: 68-QFN (8x8)
GPIO: 35
Modulation: FHSS, GFSK
RF Family/Standard: General ISM > 1GHz
Serial Interfaces: I2C, SPI
DigiKey Programmable: Not Verified
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DEMOBOARDIFX90121TOBO1 DEMOBOARDIFX90121TOBO1 Infineon Technologies DEMOBOARDIFX90121TOBO1_Web.pdf Description: DEMOBOARD IFX90121
Part Status: Active
Outputs and Type: 1, Non-Isolated
Main Purpose: DC/DC, Step Down
Supplied Contents: Board(s)
Utilized IC / Part: IFX90121
Board Type: Fully Populated
Regulator Topology: Buck
Current - Output: 500mA
Packaging: Box
Voltage - Input: 4.75V ~ 45V
Voltage - Output: 5V
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IGW50N65F5AXKSA1 IGW50N65F5AXKSA1 Infineon Technologies IGW50N65F5A.pdf Description: IGBT TRENCH 650V 80A TO247-3
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 50A
Supplier Device Package: PG-TO247-3
IGBT Type: Trench
Td (on/off) @ 25°C: 21ns/156ns
Switching Energy: 490µJ (on), 140µJ (off)
Test Condition: 400V, 25A, 12Ohm, 15V
Gate Charge: 108 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 150 A
Power - Max: 270 W
Grade: Automotive
Qualification: AEC-Q101
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TLE9222PXXUMA1 TLE9222PXXUMA1 Infineon Technologies fundamentals-of-power-semiconductors Description: IC TRANSCEIVER 1/1 PGTSSOP141
Number of Drivers/Receivers: 1/1
Voltage - Supply: 4.75V ~ 5.25V
Operating Temperature: -40°C ~ 150°C
Type: Transceiver
Mounting Type: Surface Mount
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Packaging: Tape & Reel (TR)
Part Status: Obsolete
Receiver Hysteresis: 100 mV
Supplier Device Package: PG-TSSOP-14-1
Protocol: FlexRay
Data Rate: 10Mbps
Qualification: AEC-Q100
Grade: Automotive
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TLE9222PXXUMA1 TLE9222PXXUMA1 Infineon Technologies fundamentals-of-power-semiconductors Description: IC TRANSCEIVER 1/1 PGTSSOP141
Receiver Hysteresis: 100 mV
Supplier Device Package: PG-TSSOP-14-1
Protocol: FlexRay
Data Rate: 10Mbps
Number of Drivers/Receivers: 1/1
Voltage - Supply: 4.75V ~ 5.25V
Operating Temperature: -40°C ~ 150°C
Type: Transceiver
Mounting Type: Surface Mount
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Packaging: Cut Tape (CT)
Qualification: AEC-Q100
Grade: Automotive
Part Status: Obsolete
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SAK-XC2336B40F80LAAKXUMA1 SAK-XC2336B40F80LAAKXUMA1 Infineon Technologies Infineon-XC233XB-DS-v01_00-en.pdf?fileId=db3a30433004641301301c230f6c2dc2 Description: 16 BIT C166 MICROXC2300 FAMILY (
DigiKey Programmable: Not Verified
Number of I/O: 38
Part Status: Active
Supplier Device Package: PG-LQFP-64-6
Peripherals: I²S, POR, PWM, WDT
Connectivity: CANbus, EBI/EMI, I²C, LINbus, SPI, SSC, UART/USART, USI
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Core Size: 16/32-Bit
Data Converters: A/D 9x10b
Core Processor: C166SV2
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 125°C (TA)
RAM Size: 34K x 8
Program Memory Size: 320KB (320K x 8)
Speed: 80MHz
Mounting Type: Surface Mount
Package / Case: 64-LQFP Exposed Pad
Packaging: Bulk
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XC2365B40F80LAAKXUMA1 XC2365B40F80LAAKXUMA1 Infineon Technologies Infineon-SAK-XC2365B-40F80LR%20AB-DataSheet-v01_05-EN.pdf?fileId=5546d4626b2d8e69016b46cda5a330d0 Description: IC MCU 16/32B 320KB FLSH 100LQFP
Packaging: Bulk
Package / Case: 100-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 80MHz
Program Memory Size: 320KB (320K x 8)
RAM Size: 34K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: C166SV2
Data Converters: A/D 16x10b
Core Size: 16/32-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Connectivity: CANbus, EBI/EMI, I2C, LINbus, SPI, SSC, UART/USART, USI
Peripherals: I2S, POR, PWM, WDT
Supplier Device Package: PG-LQFP-100-8
Number of I/O: 76
DigiKey Programmable: Not Verified
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SAK-XC2387C200F100LABKXUMA1 SAK-XC2387C200F100LABKXUMA1 Infineon Technologies INFNS28086-1.pdf?t.download=true&u=5oefqw Description: 16 BIT C166 MICROXC2300 FAMILY (
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XC2361A72F100LRABHXUMA1 Infineon Technologies INFNS28084-1.pdf?t.download=true&u=5oefqw Description: 16 BIT C166 MICROXC2300 FAMILY (
Number of I/O: 75
Part Status: Active
Supplier Device Package: PG-LQFP-100-8
Peripherals: I²S, POR, PWM, WDT
Connectivity: CANbus, EBI/EMI, I²C, LINbus, SPI, SSC, UART/USART, USI
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Core Size: 16/32-Bit
Data Converters: A/D 16x10b
Core Processor: C166SV2
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 125°C (TA)
RAM Size: 50K x 8
Program Memory Size: 576KB (576K x 8)
Speed: 100MHz
Mounting Type: Surface Mount
Package / Case: 100-LQFP Exposed Pad
Packaging: Bulk
Produkt ist nicht verfügbar
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IPU06N03LZG IPU06N03LZG Infineon Technologies INFNS11853-1.pdf?t.download=true&u=5oefqw Description: N-CHANNEL POWER MOSFET
Input Capacitance (Ciss) (Max) @ Vds: 2783 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 5 V
Drain to Source Voltage (Vdss): 25 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PG-TO251-3-21
Vgs(th) (Max) @ Id: 2V @ 40µA
Power Dissipation (Max): 83W (Tc)
Rds On (Max) @ Id, Vgs: 5.1mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Packaging: Bulk
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IPD06N03LAG IPD06N03LAG Infineon Technologies INFNS11936-1.pdf?t.download=true&u=5oefqw Description: N-CHANNEL POWER MOSFET
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PG-TO252-3-11
Vgs(th) (Max) @ Id: 2V @ 40µA
Power Dissipation (Max): 83W (Tc)
Rds On (Max) @ Id, Vgs: 5.7mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Bulk
Input Capacitance (Ciss) (Max) @ Vds: 2653 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 5 V
Drain to Source Voltage (Vdss): 25 V
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IPI60R190C6 IPI60R190C6 Infineon Technologies INFN-S-A0004583470-1.pdf?t.download=true&u=5oefqw Description: COOLMOS N-CHANNEL POWER MOSFET
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PG-TO262-3-1
Vgs(th) (Max) @ Id: 3.5V @ 630µA
Power Dissipation (Max): 151W (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 9.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 20.2A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Packaging: Bulk
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IHW40N60R IHW40N60R Infineon Technologies INFN-S-A0001299739-1.pdf?t.download=true&u=5oefqw Description: IGBT, 80A, 600V, N-CHANNEL
Power - Max: 305 W
Current - Collector Pulsed (Icm): 120 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 80 A
Part Status: Active
Gate Charge: 223 nC
Test Condition: 400V, 40A, 5.6Ohm, 15V
Switching Energy: 750µJ (off)
Td (on/off) @ 25°C: -/193ns
IGBT Type: Trench Field Stop
Supplier Device Package: PG-TO247-3-21
Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 40A
Input Type: Standard
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Bulk
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PEB20525EV1.2 Infineon Technologies Description: OPTIMIZED COMMS CONTROLLER
Part Status: Active
Packaging: Bulk
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CY9BF314NBGL-GE1 CY9BF314NBGL-GE1 Infineon Technologies Infineon-CY9B310R_Series_32_Bit_ARM_Cortex_M3_FM3_Microcontroller-DataSheet-v06_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0edf3ea06447&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Description: IC MCU 32BIT 288KB FLSH 112PFBGA
Packaging: Tray
Package / Case: 112-LFBGA
Mounting Type: Surface Mount
Speed: 144MHz
Program Memory Size: 288KB (288K x 8)
RAM Size: 32K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 16x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CSIO, EBI/EMI, I²C, LINbus, UART/USART, USB
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 112-PFBGA (10x10)
Part Status: Obsolete
Number of I/O: 83
DigiKey Programmable: Not Verified
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TLE7368EXUMA3 TLE7368EXUMA3 Infineon Technologies Infineon-TLE7368-DS-v02_21-EN.pdf?fileId=5546d46258fc0bc1015969d271b041d1 Description: IC REG AUTO APPL 3OUT DSO-36
Part Status: Not For New Designs
Supplier Device Package: PG-DSO-36
Applications: Power Supply, Automotive Applications
Operating Temperature: -40°C ~ 150°C
Voltage - Input: 4.5V ~ 45V
Number of Outputs: 3
Mounting Type: Surface Mount
Voltage - Output: 5V, 3.3V/2.6V, 1.3V
Package / Case: 36-BSSOP (0.295", 7.50mm Width) Exposed Pad
Packaging: Tape & Reel (TR)
Qualification: AEC-Q100
Grade: Automotive
Produkt ist nicht verfügbar
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TLE7368EXUMA3 TLE7368EXUMA3 Infineon Technologies Infineon-TLE7368-DS-v02_21-EN.pdf?fileId=5546d46258fc0bc1015969d271b041d1 Description: IC REG AUTO APPL 3OUT DSO-36
Part Status: Not For New Designs
Supplier Device Package: PG-DSO-36
Applications: Power Supply, Automotive Applications
Operating Temperature: -40°C ~ 150°C
Voltage - Input: 4.5V ~ 45V
Number of Outputs: 3
Mounting Type: Surface Mount
Voltage - Output: 5V, 3.3V/2.6V, 1.3V
Package / Case: 36-BSSOP (0.295", 7.50mm Width) Exposed Pad
Packaging: Cut Tape (CT)
Qualification: AEC-Q100
Grade: Automotive
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100+9.38 EUR
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500+8.7 EUR
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TT190N16SOFHPSA2 TT190N16SOFHPSA2 Infineon Technologies Infineon-TT190N16SOF-DS-v03_01-EN.pdf?fileId=5546d46254bdc4f50154dd3d24ae2c9d Description: SCR MODULE 1.6KV 275A MODULE
Voltage - Off State: 1.6 kV
Current - On State (It (RMS)) (Max): 275 A
Part Status: Active
Voltage - Gate Trigger (Vgt) (Max): 2.5 V
Current - On State (It (AV)) (Max): 190 A
Number of SCRs, Diodes: 2 SCRs
Current - Gate Trigger (Igt) (Max): 145 mA
Current - Hold (Ih) (Max): 200 mA
Structure: Series Connection - All SCRs
Operating Temperature: 125°C (TJ)
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Bulk
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TD175N16SOFHPSA1 TD175N16SOFHPSA1 Infineon Technologies Infineon-TT175N-DS-v03_04-EN.pdf?fileId=5546d46148a8bbb90148d04699a02e07 Description: SCR MODULE 1600V 275A MODULE
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TT104N14KOFHPSA1 TT104N14KOFHPSA1 Infineon Technologies Infineon-TT104N-DS-v03_00-en_de.pdf?fileId=db3a304412b407950112b42f760f4ba5 Description: SCR MODULE 1.4KV 160A MODULE
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 140°C
Structure: Series Connection - All SCRs
Current - Hold (Ih) (Max): 200 mA
Current - Gate Trigger (Igt) (Max): 120 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 2050A @ 50Hz
Number of SCRs, Diodes: 2 SCRs
Current - On State (It (AV)) (Max): 104 A
Voltage - Gate Trigger (Vgt) (Max): 1.4 V
Current - On State (It (RMS)) (Max): 160 A
Voltage - Off State: 1.4 kV
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TD250N16KOFHPSA1 TD250N16KOFHPSA1 Infineon Technologies Infineon-TT250N-DataSheet-v03_04-EN.pdf?fileId=5546d4627112d9d501712afa3b233fcd Description: SCR MODULE 1800V 410A MODULE
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BCR 555 E6327 Infineon Technologies INFNS10690-1.pdf?t.download=true&u=5oefqw Description: BIPOLAR DIGITAL TRANSISTOR
Resistor - Emitter Base (R2): 10 kOhms
Resistor - Base (R1): 2.2 kOhms
Frequency - Transition: 150 MHz
Power - Max: 330 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 500 mA
Part Status: Active
Supplier Device Package: PG-SOT23-3-3
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 50mA, 5V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA
Transistor Type: PNP - Pre-Biased
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Bulk
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TLD5190QUXUMA1 TLD5190QUXUMA1 Infineon Technologies Infineon-TLD5190QV-DS-v01_10-EN.pdf?fileId=5546d462625a528f0162af122f3300b8 Description: IC LED DRIVER CTRLR PWM TQFP48-9
Packaging: Tape & Reel (TR)
Package / Case: 48-TQFP Exposed Pad
Voltage - Output: 55V
Mounting Type: Surface Mount
Number of Outputs: 1
Frequency: 200kHz ~ 700kHz
Type: DC DC Controller
Operating Temperature: -40°C ~ 150°C (TJ)
Internal Switch(s): No
Topology: Step-Down (Buck), Step-Up (Boost)
Supplier Device Package: PG-TQFP-48-9
Dimming: Analog, PWM
Voltage - Supply (Min): 4.5V
Voltage - Supply (Max): 40V
Part Status: Active
Grade: Automotive
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TLD5190QUXUMA1 TLD5190QUXUMA1 Infineon Technologies Infineon-TLD5190QV-DS-v01_10-EN.pdf?fileId=5546d462625a528f0162af122f3300b8 Description: IC LED DRIVER CTRLR PWM TQFP48-9
Packaging: Cut Tape (CT)
Package / Case: 48-TQFP Exposed Pad
Voltage - Output: 55V
Mounting Type: Surface Mount
Number of Outputs: 1
Frequency: 200kHz ~ 700kHz
Type: DC DC Controller
Operating Temperature: -40°C ~ 150°C (TJ)
Internal Switch(s): No
Topology: Step-Down (Buck), Step-Up (Boost)
Supplier Device Package: PG-TQFP-48-9
Dimming: Analog, PWM
Voltage - Supply (Min): 4.5V
Voltage - Supply (Max): 40V
Part Status: Active
Grade: Automotive
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PEB 3081 F V1.4 PEB 3081 F V1.4 Infineon Technologies PEB 3081.pdf Description: IC TELECOM INTERFACE TQFP-48
Number of Circuits: 1
Part Status: Obsolete
Supplier Device Package: PG-TQFP-48
Current - Supply: 30mA
Voltage - Supply: 3.3V
Operating Temperature: 0°C ~ 70°C
Interface: IOM-2, ISDN, SCI
Function: S / T Bus Interface Transceiver
Mounting Type: Surface Mount
Package / Case: 48-LQFP
Packaging: Tray
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PEF 4268 F V1.2 PEF 4268 F V1.2 Infineon Technologies PEF%204268%20T%2CF%20Product%20Brief.pdf Description: IC TELECOM INTERFACE 48-TQFP
Number of Circuits: 1
Supplier Device Package: PG-TQFP-48-1
Voltage - Supply: 4.75V ~ 5.25V
Operating Temperature: -40°C ~ 85°C
Function: Subscriber Line Interface Concept (SLIC)
Mounting Type: Surface Mount
Package / Case: 48-LQFP
Packaging: Tray
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IKB15N60TATMA1 IKB15N60TATMA1 Infineon Technologies Infineon-IKB15N60T-DS-v02_08-EN.pdf?fileId=db3a304412b407950112b4287d223e0a Description: IGBT TRENCH FS 600V 30A TO263-3
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 34 ns
Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 15A
Supplier Device Package: PG-TO263-3-2
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 17ns/188ns
Switching Energy: 570µJ
Test Condition: 400V, 15A, 15Ohm, 15V
Gate Charge: 87 nC
Part Status: Active
Current - Collector (Ic) (Max): 30 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 45 A
Power - Max: 130 W
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IRLR3410PBF-INF Infineon Technologies Description: HEXFET POWER MOSFET
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Bulk
Input Capacitance (Ciss) (Max) @ Vds: 800 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 5 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±16V
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Part Status: Active
Supplier Device Package: D-Pak
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 79W (Tc)
Rds On (Max) @ Id, Vgs: 105mOhm @ 10A, 10V
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IRS2301STRPBF IRS2301STRPBF Infineon Technologies IRSDS10790-1.pdf?t.download=true&u=5oefqw Description: IC GATE DRVR HALF-BRIDGE 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 5V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 130ns, 50ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Current - Peak Output (Source, Sink): 200mA, 350mA
Part Status: Active
DigiKey Programmable: Not Verified
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IPD14N06S280ATMA2 IPD14N06S280ATMA2 Infineon Technologies INFNS09524-1.pdf?t.download=true&u=5oefqw Description: MOSFET N-CH 55V 17A TO252-31
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 80mOhm @ 7A, 10V
Power Dissipation (Max): 47W (Tc)
Vgs(th) (Max) @ Id: 4V @ 14µA
Supplier Device Package: PG-TO252-3-11
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 293 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
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BSC094N06LS5ATMA1 BSC094N06LS5ATMA1 Infineon Technologies Infineon-BSC094N06LS5-DS-v02_00-EN.pdf?fileId=5546d4625c54d85b015cc5ce52407ba3 Description: MOSFET N-CHANNEL 60V 47A 8TDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 47A (Tc)
Rds On (Max) @ Id, Vgs: 9.4mOhm @ 24A, 10V
Power Dissipation (Max): 36W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 14µA
Supplier Device Package: PG-TDSON-8-6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 9.4 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 30 V
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BSC094N06LS5ATMA1 BSC094N06LS5ATMA1 Infineon Technologies Infineon-BSC094N06LS5-DS-v02_00-EN.pdf?fileId=5546d4625c54d85b015cc5ce52407ba3 Description: MOSFET N-CHANNEL 60V 47A 8TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 47A (Tc)
Rds On (Max) @ Id, Vgs: 9.4mOhm @ 24A, 10V
Power Dissipation (Max): 36W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 14µA
Supplier Device Package: PG-TDSON-8-6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 9.4 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 30 V
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IPB034N06N3G IPB034N06N3G Infineon Technologies INFNS16279-1.pdf?t.download=true&u=5oefqw Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 3.4mOhm @ 100A, 10V
Power Dissipation (Max): 167W (Tc)
Vgs(th) (Max) @ Id: 4V @ 93µA
Supplier Device Package: PG-TO263-7-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11000 pF @ 30 V
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IPP084N06L3GXK IPP084N06L3GXK Infineon Technologies INFNS19509-1.pdf?t.download=true&u=5oefqw Description: N-CHANNEL POWER MOSFET
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Bulk
Input Capacitance (Ciss) (Max) @ Vds: 4900 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 4.5 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PG-TO220-3-1
Vgs(th) (Max) @ Id: 2.2V @ 34µA
Power Dissipation (Max): 79W (Tc)
Rds On (Max) @ Id, Vgs: 8.4mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
FET Type: N-Channel
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TLE4307D V33 TLE4307D V33 Infineon Technologies TLE4307.pdf Description: IC REG DL CHRPMP/LINEAR DPAK-5
Packaging: Tape & Reel (TR)
Package / Case: TO-252-5, DPak (4 Leads + Tab), TO-252AD
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C
Voltage - Supply: 4.5V ~ 25V
Topology: Charge Pump (1), Linear (LDO) (1)
Supplier Device Package: PG-TO252-5-1
Voltage/Current - Output 2: 3.3V, 250mA
w/LED Driver: No
w/Supervisor: No
w/Sequencer: No
Number of Outputs: 2
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BSZ0945NDXTMA1 Infineon Technologies Description: TRENCH <= 40V
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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CY9BF324MBGL-GE1 CY9BF324MBGL-GE1 Infineon Technologies download Description: IC MCU 32BIT 288KB FLASH 96FBGA
Number of I/O: 65
Part Status: Obsolete
Supplier Device Package: 96-FBGA (6x6)
Peripherals: DMA, LVD, POR, PWM, WDT
Connectivity: CSIO, EBI/EMI, I²C, LINbus, UART/USART, USB
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Core Size: 32-Bit Single-Core
Data Converters: A/D 26x12b; D/A 2x10b
Core Processor: ARM® Cortex®-M3
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 105°C (TA)
RAM Size: 32K x 8
Program Memory Size: 288KB (288K x 8)
Speed: 72MHz
Mounting Type: Surface Mount
Package / Case: 96-LFBGA
Packaging: Tray
DigiKey Programmable: Not Verified
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SPB21N10 G SPB21N10 G Infineon Technologies SPB21N10.pdf Description: MOSFET N-CH 100V 21A D2PAK
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TLE4274V50AKSA1 TLE4274V50AKSA1 Infineon Technologies INFNS16630-1.pdf?t.download=true&u=5oefqw Description: IC REG LINEAR FIXED LDO REG
Current - Supply (Max): 30 mA
Protection Features: Over Current, Over Temperature, Reverse Polarity, Short Circuit
Voltage Dropout (Max): 0.5V @ 250mA
PSRR: 60dB (100Hz)
Voltage - Output (Min/Fixed): 5V
Supplier Device Package: PG-TO220-3-1
Number of Regulators: 1
Voltage - Input (Max): 40V
Current - Quiescent (Iq): 220 µA
Output Configuration: Positive
Operating Temperature: -40°C ~ 150°C (TJ)
Current - Output: 400mA
Mounting Type: Through Hole
Output Type: Fixed
Package / Case: TO-220-3
Packaging: Bulk
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TLE8457ALEXUMA1 TLE8457ALEXUMA1 Infineon Technologies Infineon-TLE8457-DS-v01_00-EN.pdf?fileId=5546d46259d9a4bf015a3d3694ae6179 Description: IC TRANSCEIVER 1/1 TSON-8
Part Status: Not For New Designs
Receiver Hysteresis: 175 mV
Supplier Device Package: PG-TSON-8-1
Protocol: LINbus
Number of Drivers/Receivers: 1/1
Voltage - Supply: 5V
Operating Temperature: -40°C ~ 150°C
Type: Transceiver
Mounting Type: Surface Mount, Wettable Flank
Package / Case: 8-TDFN Exposed Pad
Packaging: Tape & Reel (TR)
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TLE8457ALEXUMA1 TLE8457ALEXUMA1 Infineon Technologies Infineon-TLE8457-DS-v01_00-EN.pdf?fileId=5546d46259d9a4bf015a3d3694ae6179 Description: IC TRANSCEIVER 1/1 TSON-8
Part Status: Not For New Designs
Receiver Hysteresis: 175 mV
Supplier Device Package: PG-TSON-8-1
Protocol: LINbus
Number of Drivers/Receivers: 1/1
Voltage - Supply: 5V
Operating Temperature: -40°C ~ 150°C
Type: Transceiver
Mounting Type: Surface Mount, Wettable Flank
Package / Case: 8-TDFN Exposed Pad
Packaging: Cut Tape (CT)
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BSO083N03MSG BSO083N03MSG Infineon Technologies INFNS16223-1.pdf?t.download=true&u=5oefqw Description: N-CHANNEL POWER MOSFET
Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PG-DSO-8
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 1.56W (Ta)
Rds On (Max) @ Id, Vgs: 8.3mOhm @ 14A, 10V
Current - Continuous Drain (Id) @ 25°C: 11A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Bulk
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AIDW16S65C5XKSA1 AIDW16S65C5XKSA1 Infineon Technologies Infineon-AIDW16S65C5-DS-v01_03-EN.pdf?fileId=5546d462675a6972016773c2d4eb5680 Description: DIODE SIL CARB 650V 16A TO247-3
Qualification: AEC-Q100/101
Current - Reverse Leakage @ Vr: 90 µA @ 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 16 A
Voltage - DC Reverse (Vr) (Max): 650 V
Grade: Automotive
Operating Temperature - Junction: -40°C ~ 175°C
Supplier Device Package: PG-TO247-3-41
Current - Average Rectified (Io): 16A
Capacitance @ Vr, F: 471pF @ 1V, 1MHz
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
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AIDW20S65C5XKSA1 AIDW20S65C5XKSA1 Infineon Technologies Infineon-AIDW20S65C5-DS-v01_03-EN.pdf?fileId=5546d462675a6972016773c2ecdd5689 Description: DIODE SIL CARB 650V 20A TO247-3
Supplier Device Package: PG-TO247-3-41
Current - Average Rectified (Io): 20A
Capacitance @ Vr, F: 584pF @ 1V, 1MHz
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Current - Reverse Leakage @ Vr: 120 µA @ 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 20 A
Voltage - DC Reverse (Vr) (Max): 650 V
Part Status: Last Time Buy
Operating Temperature - Junction: -40°C ~ 175°C
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AIDW30S65C5XKSA1 AIDW30S65C5XKSA1 Infineon Technologies Infineon-AIDW30S65C5-DS-v01_03-EN.pdf?fileId=5546d462675a6972016773c2de0c5683 Description: DIODE SIL CARB 650V 30A TO247-3
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TZ800N16KOFTIMHPSA1 TZ800N16KOFTIMHPSA1 Infineon Technologies Infineon-TZ800N-DS-v03_05-EN.pdf?fileId=db3a304412b407950112b42f8b8e4c29 Description: SCR MODULE 1800V 1500A MODULE
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TD250N16KOFTIMHPSA1 TD250N16KOFTIMHPSA1 Infineon Technologies Infineon-TT250N-DataSheet-v03_04-EN.pdf?fileId=5546d4627112d9d501712afa3b233fcd Description: SCR MODULE 1800V 410A MODULE
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TT250N16KOFTIMHPSA1 TT250N16KOFTIMHPSA1 Infineon Technologies Infineon-TT250N-DataSheet-v03_04-EN.pdf?fileId=5546d4627112d9d501712afa3b233fcd Description: SCR MODULE 1800V 410A MODULE
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TT330N16KOFTIMHPSA1 TT330N16KOFTIMHPSA1 Infineon Technologies Infineon-TT330N-DS-v03_04-EN.pdf?fileId=5546d46269e1c019016a0c69cb4f4b54 Description: SCR MODULE 1600V 520A MODULE
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TT500N16KOFTIMHPSA1 TT500N16KOFTIMHPSA1 Infineon Technologies Infineon-TT500N-DS-v03_04-EN.pdf?fileId=db3a30434486a89301448d34d0f7790d Description: SCR MODULE 1800V 900A MODULE
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TD600N16KOFTIMHPSA1 TD600N16KOFTIMHPSA1 Infineon Technologies Infineon-TT600N16KOF-DS-v03_03-EN.pdf?fileId=5546d461464245d301466688b00360e0 Description: SCR MODULE 1600V 1050A MODULE
Voltage - Off State: 1.6 kV
Current - On State (It (RMS)) (Max): 1050 A
Part Status: Active
Voltage - Gate Trigger (Vgt) (Max): 2 V
Current - On State (It (AV)) (Max): 600 A
Number of SCRs, Diodes: 1 SCR, 1 Diode
Current - Non Rep. Surge 50, 60Hz (Itsm): 21000A @ 50Hz
Current - Gate Trigger (Igt) (Max): 250 mA
Current - Hold (Ih) (Max): 300 mA
Structure: Series Connection - SCR/Diode
Operating Temperature: -40°C ~ 125°C
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Tray
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V611480MHPSA1 Infineon Technologies Infineon-CLAMP_V61_14_80M-DS-v03_00-en_de.pdf?fileId=5546d46145f1f3a401461e177a6a1d5f Description: CLAMP DISK DEVICES 48MM HOUSINGS
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V501445MHPSA1 Infineon Technologies Infineon-Clamp_for_disc_devices_V50..M-DS-v03_00-EN.pdf?fileId=5546d462525dbac401532d7110a909aa Description: CLAMP DISK DEVICES 42MM HOUSINGS
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BAS7004SH6327XTSA1 INFNS30154-1.pdf?t.download=true&u=5oefqw
BAS7004SH6327XTSA1
Hersteller: Infineon Technologies
Description: DIODE ARR SCHOTT 70V SOT363-PO
Packaging: Cut Tape (CT)
Package / Case: 6-VSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 100 ps
Technology: Schottky
Diode Configuration: 2 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 70mA (DC)
Supplier Device Package: PG-SOT363-PO
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 70 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 15 mA
Current - Reverse Leakage @ Vr: 100 nA @ 50 V
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100+0.38 EUR
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TT142N16KOFHPSA1 TT142N.pdf
TT142N16KOFHPSA1
Hersteller: Infineon Technologies
Description: SCR MODULE 1.6KV 230A MODULE
Voltage - Off State: 1.6 kV
Voltage - Gate Trigger (Vgt) (Max): 2 V
Current - On State (It (AV)) (Max): 142 A
Number of SCRs, Diodes: 2 SCRs
Current - Non Rep. Surge 50, 60Hz (Itsm): 4800A @ 50Hz
Current - Gate Trigger (Igt) (Max): 150 mA
Current - Hold (Ih) (Max): 200 mA
Structure: Series Connection - All SCRs
Operating Temperature: -40°C ~ 125°C
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Bulk
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TMOSP12034 IRSDS11200-1.pdf?t.download=true&u=5oefqw
TMOSP12034
Hersteller: Infineon Technologies
Description: N-CHANNEL POWER MOSFET
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TLE8458GV33XUMA2 Infineon-TLE8458-DS-v01_00-EN.pdf?fileId=5546d46259d9a4bf015a3d2da4b66071
TLE8458GV33XUMA2
Hersteller: Infineon Technologies
Description: IC TRANSCEIVER FULL 1/1 DSO-8
Part Status: Not For New Designs
Duplex: Full
Supplier Device Package: PG-DSO-8-16
Protocol: LINbus
Data Rate: 20kbps
Number of Drivers/Receivers: 1/1
Voltage - Supply: 7V ~ 27V
Operating Temperature: -40°C ~ 150°C
Type: Transceiver
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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TLE8458GXUMA2 Infineon-TLE8458-DS-v01_00-EN.pdf?fileId=5546d46259d9a4bf015a3d2da4b66071
TLE8458GXUMA2
Hersteller: Infineon Technologies
Description: IC TRANSCEIVER FULL 1/1 DSO-8
Part Status: Not For New Designs
Duplex: Full
Supplier Device Package: PG-DSO-8-16
Protocol: LINbus
Data Rate: 20kbps
Number of Drivers/Receivers: 1/1
Voltage - Supply: 7V ~ 27V
Operating Temperature: -40°C ~ 150°C
Type: Transceiver
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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BCW61AE6327 INFNS11623-1.pdf?t.download=true&u=5oefqw
BCW61AE6327
Hersteller: Infineon Technologies
Description: TRANS PNP 32V 0.1A SOT23
Part Status: Active
Supplier Device Package: PG-SOT23
Frequency - Transition: 250MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 5V
Current - Collector Cutoff (Max): 20nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 550mV @ 1.25mA, 50mA
Operating Temperature: 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Bulk
Power - Max: 330 mW
Voltage - Collector Emitter Breakdown (Max): 32 V
Current - Collector (Ic) (Max): 100 mA
Produkt ist nicht verfügbar
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BCW61A INFNS17211-1.pdf?t.download=true&u=5oefqw
BCW61A
Hersteller: Infineon Technologies
Description: TRANS PNP 32V 0.1A SOT23
Power - Max: 330 mW
Voltage - Collector Emitter Breakdown (Max): 32 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Active
Supplier Device Package: PG-SOT23
Frequency - Transition: 250MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 5V
Current - Collector Cutoff (Max): 20nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 550mV @ 1.25mA, 50mA
Operating Temperature: 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Bulk
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CYRF89435-68LTXC CYRF89435.pdf
CYRF89435-68LTXC
Hersteller: Infineon Technologies
Description: IC RF TXRX+MCU ISM>1GHZ 68VFQFN
Packaging: Tray
Package / Case: 68-VFQFN Exposed Pad
Sensitivity: -87dBm
Mounting Type: Surface Mount
Frequency: 2.4GHz
Memory Size: 32kB Flash, 2kB SRAM
Type: TxRx + MCU
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 1.9V ~ 3.6V
Power - Output: 1dBm
Current - Receiving: 18mA
Data Rate (Max): 1Mbps
Current - Transmitting: 13.7mA ~ 18.5mA
Supplier Device Package: 68-QFN (8x8)
GPIO: 35
Modulation: FHSS, GFSK
RF Family/Standard: General ISM > 1GHz
Serial Interfaces: I2C, SPI
DigiKey Programmable: Not Verified
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7+3.47 EUR
10+2.99 EUR
25+2.82 EUR
100+2.59 EUR
260+2.45 EUR
520+2.36 EUR
1040+2.26 EUR
5200+2.07 EUR
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DEMOBOARDIFX90121TOBO1 DEMOBOARDIFX90121TOBO1_Web.pdf
DEMOBOARDIFX90121TOBO1
Hersteller: Infineon Technologies
Description: DEMOBOARD IFX90121
Part Status: Active
Outputs and Type: 1, Non-Isolated
Main Purpose: DC/DC, Step Down
Supplied Contents: Board(s)
Utilized IC / Part: IFX90121
Board Type: Fully Populated
Regulator Topology: Buck
Current - Output: 500mA
Packaging: Box
Voltage - Input: 4.75V ~ 45V
Voltage - Output: 5V
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IGW50N65F5AXKSA1 IGW50N65F5A.pdf
IGW50N65F5AXKSA1
Hersteller: Infineon Technologies
Description: IGBT TRENCH 650V 80A TO247-3
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 50A
Supplier Device Package: PG-TO247-3
IGBT Type: Trench
Td (on/off) @ 25°C: 21ns/156ns
Switching Energy: 490µJ (on), 140µJ (off)
Test Condition: 400V, 25A, 12Ohm, 15V
Gate Charge: 108 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 150 A
Power - Max: 270 W
Grade: Automotive
Qualification: AEC-Q101
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TLE9222PXXUMA1 fundamentals-of-power-semiconductors
TLE9222PXXUMA1
Hersteller: Infineon Technologies
Description: IC TRANSCEIVER 1/1 PGTSSOP141
Number of Drivers/Receivers: 1/1
Voltage - Supply: 4.75V ~ 5.25V
Operating Temperature: -40°C ~ 150°C
Type: Transceiver
Mounting Type: Surface Mount
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Packaging: Tape & Reel (TR)
Part Status: Obsolete
Receiver Hysteresis: 100 mV
Supplier Device Package: PG-TSSOP-14-1
Protocol: FlexRay
Data Rate: 10Mbps
Qualification: AEC-Q100
Grade: Automotive
Produkt ist nicht verfügbar
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TLE9222PXXUMA1 fundamentals-of-power-semiconductors
TLE9222PXXUMA1
Hersteller: Infineon Technologies
Description: IC TRANSCEIVER 1/1 PGTSSOP141
Receiver Hysteresis: 100 mV
Supplier Device Package: PG-TSSOP-14-1
Protocol: FlexRay
Data Rate: 10Mbps
Number of Drivers/Receivers: 1/1
Voltage - Supply: 4.75V ~ 5.25V
Operating Temperature: -40°C ~ 150°C
Type: Transceiver
Mounting Type: Surface Mount
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Packaging: Cut Tape (CT)
Qualification: AEC-Q100
Grade: Automotive
Part Status: Obsolete
Produkt ist nicht verfügbar
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SAK-XC2336B40F80LAAKXUMA1 Infineon-XC233XB-DS-v01_00-en.pdf?fileId=db3a30433004641301301c230f6c2dc2
SAK-XC2336B40F80LAAKXUMA1
Hersteller: Infineon Technologies
Description: 16 BIT C166 MICROXC2300 FAMILY (
DigiKey Programmable: Not Verified
Number of I/O: 38
Part Status: Active
Supplier Device Package: PG-LQFP-64-6
Peripherals: I²S, POR, PWM, WDT
Connectivity: CANbus, EBI/EMI, I²C, LINbus, SPI, SSC, UART/USART, USI
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Core Size: 16/32-Bit
Data Converters: A/D 9x10b
Core Processor: C166SV2
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 125°C (TA)
RAM Size: 34K x 8
Program Memory Size: 320KB (320K x 8)
Speed: 80MHz
Mounting Type: Surface Mount
Package / Case: 64-LQFP Exposed Pad
Packaging: Bulk
Produkt ist nicht verfügbar
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XC2365B40F80LAAKXUMA1 Infineon-SAK-XC2365B-40F80LR%20AB-DataSheet-v01_05-EN.pdf?fileId=5546d4626b2d8e69016b46cda5a330d0
XC2365B40F80LAAKXUMA1
Hersteller: Infineon Technologies
Description: IC MCU 16/32B 320KB FLSH 100LQFP
Packaging: Bulk
Package / Case: 100-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 80MHz
Program Memory Size: 320KB (320K x 8)
RAM Size: 34K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: C166SV2
Data Converters: A/D 16x10b
Core Size: 16/32-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Connectivity: CANbus, EBI/EMI, I2C, LINbus, SPI, SSC, UART/USART, USI
Peripherals: I2S, POR, PWM, WDT
Supplier Device Package: PG-LQFP-100-8
Number of I/O: 76
DigiKey Programmable: Not Verified
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42+13.01 EUR
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SAK-XC2387C200F100LABKXUMA1 INFNS28086-1.pdf?t.download=true&u=5oefqw
SAK-XC2387C200F100LABKXUMA1
Hersteller: Infineon Technologies
Description: 16 BIT C166 MICROXC2300 FAMILY (
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XC2361A72F100LRABHXUMA1 INFNS28084-1.pdf?t.download=true&u=5oefqw
Hersteller: Infineon Technologies
Description: 16 BIT C166 MICROXC2300 FAMILY (
Number of I/O: 75
Part Status: Active
Supplier Device Package: PG-LQFP-100-8
Peripherals: I²S, POR, PWM, WDT
Connectivity: CANbus, EBI/EMI, I²C, LINbus, SPI, SSC, UART/USART, USI
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Core Size: 16/32-Bit
Data Converters: A/D 16x10b
Core Processor: C166SV2
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 125°C (TA)
RAM Size: 50K x 8
Program Memory Size: 576KB (576K x 8)
Speed: 100MHz
Mounting Type: Surface Mount
Package / Case: 100-LQFP Exposed Pad
Packaging: Bulk
Produkt ist nicht verfügbar
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IPU06N03LZG INFNS11853-1.pdf?t.download=true&u=5oefqw
IPU06N03LZG
Hersteller: Infineon Technologies
Description: N-CHANNEL POWER MOSFET
Input Capacitance (Ciss) (Max) @ Vds: 2783 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 5 V
Drain to Source Voltage (Vdss): 25 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PG-TO251-3-21
Vgs(th) (Max) @ Id: 2V @ 40µA
Power Dissipation (Max): 83W (Tc)
Rds On (Max) @ Id, Vgs: 5.1mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Packaging: Bulk
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650+0.87 EUR
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IPD06N03LAG INFNS11936-1.pdf?t.download=true&u=5oefqw
IPD06N03LAG
Hersteller: Infineon Technologies
Description: N-CHANNEL POWER MOSFET
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PG-TO252-3-11
Vgs(th) (Max) @ Id: 2V @ 40µA
Power Dissipation (Max): 83W (Tc)
Rds On (Max) @ Id, Vgs: 5.7mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Bulk
Input Capacitance (Ciss) (Max) @ Vds: 2653 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 5 V
Drain to Source Voltage (Vdss): 25 V
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IPI60R190C6 INFN-S-A0004583470-1.pdf?t.download=true&u=5oefqw
IPI60R190C6
Hersteller: Infineon Technologies
Description: COOLMOS N-CHANNEL POWER MOSFET
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PG-TO262-3-1
Vgs(th) (Max) @ Id: 3.5V @ 630µA
Power Dissipation (Max): 151W (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 9.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 20.2A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Packaging: Bulk
Produkt ist nicht verfügbar
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IHW40N60R INFN-S-A0001299739-1.pdf?t.download=true&u=5oefqw
IHW40N60R
Hersteller: Infineon Technologies
Description: IGBT, 80A, 600V, N-CHANNEL
Power - Max: 305 W
Current - Collector Pulsed (Icm): 120 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 80 A
Part Status: Active
Gate Charge: 223 nC
Test Condition: 400V, 40A, 5.6Ohm, 15V
Switching Energy: 750µJ (off)
Td (on/off) @ 25°C: -/193ns
IGBT Type: Trench Field Stop
Supplier Device Package: PG-TO247-3-21
Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 40A
Input Type: Standard
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Bulk
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121+4.77 EUR
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PEB20525EV1.2
Hersteller: Infineon Technologies
Description: OPTIMIZED COMMS CONTROLLER
Part Status: Active
Packaging: Bulk
auf Bestellung 333 Stücke:
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28+22.74 EUR
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CY9BF314NBGL-GE1 Infineon-CY9B310R_Series_32_Bit_ARM_Cortex_M3_FM3_Microcontroller-DataSheet-v06_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0edf3ea06447&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
CY9BF314NBGL-GE1
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 288KB FLSH 112PFBGA
Packaging: Tray
Package / Case: 112-LFBGA
Mounting Type: Surface Mount
Speed: 144MHz
Program Memory Size: 288KB (288K x 8)
RAM Size: 32K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 16x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CSIO, EBI/EMI, I²C, LINbus, UART/USART, USB
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 112-PFBGA (10x10)
Part Status: Obsolete
Number of I/O: 83
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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TLE7368EXUMA3 Infineon-TLE7368-DS-v02_21-EN.pdf?fileId=5546d46258fc0bc1015969d271b041d1
TLE7368EXUMA3
Hersteller: Infineon Technologies
Description: IC REG AUTO APPL 3OUT DSO-36
Part Status: Not For New Designs
Supplier Device Package: PG-DSO-36
Applications: Power Supply, Automotive Applications
Operating Temperature: -40°C ~ 150°C
Voltage - Input: 4.5V ~ 45V
Number of Outputs: 3
Mounting Type: Surface Mount
Voltage - Output: 5V, 3.3V/2.6V, 1.3V
Package / Case: 36-BSSOP (0.295", 7.50mm Width) Exposed Pad
Packaging: Tape & Reel (TR)
Qualification: AEC-Q100
Grade: Automotive
Produkt ist nicht verfügbar
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TLE7368EXUMA3 Infineon-TLE7368-DS-v02_21-EN.pdf?fileId=5546d46258fc0bc1015969d271b041d1
TLE7368EXUMA3
Hersteller: Infineon Technologies
Description: IC REG AUTO APPL 3OUT DSO-36
Part Status: Not For New Designs
Supplier Device Package: PG-DSO-36
Applications: Power Supply, Automotive Applications
Operating Temperature: -40°C ~ 150°C
Voltage - Input: 4.5V ~ 45V
Number of Outputs: 3
Mounting Type: Surface Mount
Voltage - Output: 5V, 3.3V/2.6V, 1.3V
Package / Case: 36-BSSOP (0.295", 7.50mm Width) Exposed Pad
Packaging: Cut Tape (CT)
Qualification: AEC-Q100
Grade: Automotive
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2+14.3 EUR
10+11.08 EUR
25+10.27 EUR
100+9.38 EUR
250+8.96 EUR
500+8.7 EUR
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TT190N16SOFHPSA2 Infineon-TT190N16SOF-DS-v03_01-EN.pdf?fileId=5546d46254bdc4f50154dd3d24ae2c9d
TT190N16SOFHPSA2
Hersteller: Infineon Technologies
Description: SCR MODULE 1.6KV 275A MODULE
Voltage - Off State: 1.6 kV
Current - On State (It (RMS)) (Max): 275 A
Part Status: Active
Voltage - Gate Trigger (Vgt) (Max): 2.5 V
Current - On State (It (AV)) (Max): 190 A
Number of SCRs, Diodes: 2 SCRs
Current - Gate Trigger (Igt) (Max): 145 mA
Current - Hold (Ih) (Max): 200 mA
Structure: Series Connection - All SCRs
Operating Temperature: 125°C (TJ)
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Bulk
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16+73.82 EUR
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TD175N16SOFHPSA1 Infineon-TT175N-DS-v03_04-EN.pdf?fileId=5546d46148a8bbb90148d04699a02e07
TD175N16SOFHPSA1
Hersteller: Infineon Technologies
Description: SCR MODULE 1600V 275A MODULE
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TT104N14KOFHPSA1 Infineon-TT104N-DS-v03_00-en_de.pdf?fileId=db3a304412b407950112b42f760f4ba5
TT104N14KOFHPSA1
Hersteller: Infineon Technologies
Description: SCR MODULE 1.4KV 160A MODULE
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 140°C
Structure: Series Connection - All SCRs
Current - Hold (Ih) (Max): 200 mA
Current - Gate Trigger (Igt) (Max): 120 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 2050A @ 50Hz
Number of SCRs, Diodes: 2 SCRs
Current - On State (It (AV)) (Max): 104 A
Voltage - Gate Trigger (Vgt) (Max): 1.4 V
Current - On State (It (RMS)) (Max): 160 A
Voltage - Off State: 1.4 kV
Produkt ist nicht verfügbar
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TD250N16KOFHPSA1 Infineon-TT250N-DataSheet-v03_04-EN.pdf?fileId=5546d4627112d9d501712afa3b233fcd
TD250N16KOFHPSA1
Hersteller: Infineon Technologies
Description: SCR MODULE 1800V 410A MODULE
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BCR 555 E6327 INFNS10690-1.pdf?t.download=true&u=5oefqw
Hersteller: Infineon Technologies
Description: BIPOLAR DIGITAL TRANSISTOR
Resistor - Emitter Base (R2): 10 kOhms
Resistor - Base (R1): 2.2 kOhms
Frequency - Transition: 150 MHz
Power - Max: 330 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 500 mA
Part Status: Active
Supplier Device Package: PG-SOT23-3-3
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 50mA, 5V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA
Transistor Type: PNP - Pre-Biased
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Bulk
Produkt ist nicht verfügbar
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TLD5190QUXUMA1 Infineon-TLD5190QV-DS-v01_10-EN.pdf?fileId=5546d462625a528f0162af122f3300b8
TLD5190QUXUMA1
Hersteller: Infineon Technologies
Description: IC LED DRIVER CTRLR PWM TQFP48-9
Packaging: Tape & Reel (TR)
Package / Case: 48-TQFP Exposed Pad
Voltage - Output: 55V
Mounting Type: Surface Mount
Number of Outputs: 1
Frequency: 200kHz ~ 700kHz
Type: DC DC Controller
Operating Temperature: -40°C ~ 150°C (TJ)
Internal Switch(s): No
Topology: Step-Down (Buck), Step-Up (Boost)
Supplier Device Package: PG-TQFP-48-9
Dimming: Analog, PWM
Voltage - Supply (Min): 4.5V
Voltage - Supply (Max): 40V
Part Status: Active
Grade: Automotive
Produkt ist nicht verfügbar
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TLD5190QUXUMA1 Infineon-TLD5190QV-DS-v01_10-EN.pdf?fileId=5546d462625a528f0162af122f3300b8
TLD5190QUXUMA1
Hersteller: Infineon Technologies
Description: IC LED DRIVER CTRLR PWM TQFP48-9
Packaging: Cut Tape (CT)
Package / Case: 48-TQFP Exposed Pad
Voltage - Output: 55V
Mounting Type: Surface Mount
Number of Outputs: 1
Frequency: 200kHz ~ 700kHz
Type: DC DC Controller
Operating Temperature: -40°C ~ 150°C (TJ)
Internal Switch(s): No
Topology: Step-Down (Buck), Step-Up (Boost)
Supplier Device Package: PG-TQFP-48-9
Dimming: Analog, PWM
Voltage - Supply (Min): 4.5V
Voltage - Supply (Max): 40V
Part Status: Active
Grade: Automotive
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5+4.86 EUR
10+3.63 EUR
25+3.32 EUR
100+2.98 EUR
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500+2.71 EUR
1000+2.64 EUR
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PEB 3081 F V1.4 PEB 3081.pdf
PEB 3081 F V1.4
Hersteller: Infineon Technologies
Description: IC TELECOM INTERFACE TQFP-48
Number of Circuits: 1
Part Status: Obsolete
Supplier Device Package: PG-TQFP-48
Current - Supply: 30mA
Voltage - Supply: 3.3V
Operating Temperature: 0°C ~ 70°C
Interface: IOM-2, ISDN, SCI
Function: S / T Bus Interface Transceiver
Mounting Type: Surface Mount
Package / Case: 48-LQFP
Packaging: Tray
Produkt ist nicht verfügbar
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PEF 4268 F V1.2 PEF%204268%20T%2CF%20Product%20Brief.pdf
PEF 4268 F V1.2
Hersteller: Infineon Technologies
Description: IC TELECOM INTERFACE 48-TQFP
Number of Circuits: 1
Supplier Device Package: PG-TQFP-48-1
Voltage - Supply: 4.75V ~ 5.25V
Operating Temperature: -40°C ~ 85°C
Function: Subscriber Line Interface Concept (SLIC)
Mounting Type: Surface Mount
Package / Case: 48-LQFP
Packaging: Tray
Produkt ist nicht verfügbar
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IKB15N60TATMA1 Infineon-IKB15N60T-DS-v02_08-EN.pdf?fileId=db3a304412b407950112b4287d223e0a
IKB15N60TATMA1
Hersteller: Infineon Technologies
Description: IGBT TRENCH FS 600V 30A TO263-3
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 34 ns
Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 15A
Supplier Device Package: PG-TO263-3-2
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 17ns/188ns
Switching Energy: 570µJ
Test Condition: 400V, 15A, 15Ohm, 15V
Gate Charge: 87 nC
Part Status: Active
Current - Collector (Ic) (Max): 30 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 45 A
Power - Max: 130 W
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4+5.76 EUR
10+3.74 EUR
100+2.58 EUR
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IRLR3410PBF-INF
Hersteller: Infineon Technologies
Description: HEXFET POWER MOSFET
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Bulk
Input Capacitance (Ciss) (Max) @ Vds: 800 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 5 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±16V
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Part Status: Active
Supplier Device Package: D-Pak
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 79W (Tc)
Rds On (Max) @ Id, Vgs: 105mOhm @ 10A, 10V
Produkt ist nicht verfügbar
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IRS2301STRPBF IRSDS10790-1.pdf?t.download=true&u=5oefqw
IRS2301STRPBF
Hersteller: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 5V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 130ns, 50ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Current - Peak Output (Source, Sink): 200mA, 350mA
Part Status: Active
DigiKey Programmable: Not Verified
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12+1.88 EUR
16+1.36 EUR
25+1.23 EUR
100+1.08 EUR
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1000+0.94 EUR
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IPD14N06S280ATMA2 INFNS09524-1.pdf?t.download=true&u=5oefqw
IPD14N06S280ATMA2
Hersteller: Infineon Technologies
Description: MOSFET N-CH 55V 17A TO252-31
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 80mOhm @ 7A, 10V
Power Dissipation (Max): 47W (Tc)
Vgs(th) (Max) @ Id: 4V @ 14µA
Supplier Device Package: PG-TO252-3-11
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 293 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 3094 Stücke:
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9+2.53 EUR
14+1.59 EUR
100+1.05 EUR
500+0.82 EUR
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BSC094N06LS5ATMA1 Infineon-BSC094N06LS5-DS-v02_00-EN.pdf?fileId=5546d4625c54d85b015cc5ce52407ba3
BSC094N06LS5ATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CHANNEL 60V 47A 8TDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 47A (Tc)
Rds On (Max) @ Id, Vgs: 9.4mOhm @ 24A, 10V
Power Dissipation (Max): 36W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 14µA
Supplier Device Package: PG-TDSON-8-6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 9.4 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 30 V
Produkt ist nicht verfügbar
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BSC094N06LS5ATMA1 Infineon-BSC094N06LS5-DS-v02_00-EN.pdf?fileId=5546d4625c54d85b015cc5ce52407ba3
BSC094N06LS5ATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CHANNEL 60V 47A 8TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 47A (Tc)
Rds On (Max) @ Id, Vgs: 9.4mOhm @ 24A, 10V
Power Dissipation (Max): 36W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 14µA
Supplier Device Package: PG-TDSON-8-6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 9.4 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 30 V
auf Bestellung 4803 Stücke:
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11+1.96 EUR
18+1.21 EUR
50+0.9 EUR
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IPB034N06N3G INFNS16279-1.pdf?t.download=true&u=5oefqw
IPB034N06N3G
Hersteller: Infineon Technologies
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 3.4mOhm @ 100A, 10V
Power Dissipation (Max): 167W (Tc)
Vgs(th) (Max) @ Id: 4V @ 93µA
Supplier Device Package: PG-TO263-7-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11000 pF @ 30 V
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214+2.57 EUR
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IPP084N06L3GXK INFNS19509-1.pdf?t.download=true&u=5oefqw
IPP084N06L3GXK
Hersteller: Infineon Technologies
Description: N-CHANNEL POWER MOSFET
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Bulk
Input Capacitance (Ciss) (Max) @ Vds: 4900 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 4.5 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PG-TO220-3-1
Vgs(th) (Max) @ Id: 2.2V @ 34µA
Power Dissipation (Max): 79W (Tc)
Rds On (Max) @ Id, Vgs: 8.4mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
FET Type: N-Channel
Produkt ist nicht verfügbar
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TLE4307D V33 TLE4307.pdf
TLE4307D V33
Hersteller: Infineon Technologies
Description: IC REG DL CHRPMP/LINEAR DPAK-5
Packaging: Tape & Reel (TR)
Package / Case: TO-252-5, DPak (4 Leads + Tab), TO-252AD
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C
Voltage - Supply: 4.5V ~ 25V
Topology: Charge Pump (1), Linear (LDO) (1)
Supplier Device Package: PG-TO252-5-1
Voltage/Current - Output 2: 3.3V, 250mA
w/LED Driver: No
w/Supervisor: No
w/Sequencer: No
Number of Outputs: 2
Produkt ist nicht verfügbar
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BSZ0945NDXTMA1
Hersteller: Infineon Technologies
Description: TRENCH <= 40V
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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CY9BF324MBGL-GE1 download
CY9BF324MBGL-GE1
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 288KB FLASH 96FBGA
Number of I/O: 65
Part Status: Obsolete
Supplier Device Package: 96-FBGA (6x6)
Peripherals: DMA, LVD, POR, PWM, WDT
Connectivity: CSIO, EBI/EMI, I²C, LINbus, UART/USART, USB
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Core Size: 32-Bit Single-Core
Data Converters: A/D 26x12b; D/A 2x10b
Core Processor: ARM® Cortex®-M3
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 105°C (TA)
RAM Size: 32K x 8
Program Memory Size: 288KB (288K x 8)
Speed: 72MHz
Mounting Type: Surface Mount
Package / Case: 96-LFBGA
Packaging: Tray
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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SPB21N10 G SPB21N10.pdf
SPB21N10 G
Hersteller: Infineon Technologies
Description: MOSFET N-CH 100V 21A D2PAK
Produkt ist nicht verfügbar
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TLE4274V50AKSA1 INFNS16630-1.pdf?t.download=true&u=5oefqw
TLE4274V50AKSA1
Hersteller: Infineon Technologies
Description: IC REG LINEAR FIXED LDO REG
Current - Supply (Max): 30 mA
Protection Features: Over Current, Over Temperature, Reverse Polarity, Short Circuit
Voltage Dropout (Max): 0.5V @ 250mA
PSRR: 60dB (100Hz)
Voltage - Output (Min/Fixed): 5V
Supplier Device Package: PG-TO220-3-1
Number of Regulators: 1
Voltage - Input (Max): 40V
Current - Quiescent (Iq): 220 µA
Output Configuration: Positive
Operating Temperature: -40°C ~ 150°C (TJ)
Current - Output: 400mA
Mounting Type: Through Hole
Output Type: Fixed
Package / Case: TO-220-3
Packaging: Bulk
auf Bestellung 39709 Stücke:
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400+1.43 EUR
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TLE8457ALEXUMA1 Infineon-TLE8457-DS-v01_00-EN.pdf?fileId=5546d46259d9a4bf015a3d3694ae6179
TLE8457ALEXUMA1
Hersteller: Infineon Technologies
Description: IC TRANSCEIVER 1/1 TSON-8
Part Status: Not For New Designs
Receiver Hysteresis: 175 mV
Supplier Device Package: PG-TSON-8-1
Protocol: LINbus
Number of Drivers/Receivers: 1/1
Voltage - Supply: 5V
Operating Temperature: -40°C ~ 150°C
Type: Transceiver
Mounting Type: Surface Mount, Wettable Flank
Package / Case: 8-TDFN Exposed Pad
Packaging: Tape & Reel (TR)
auf Bestellung 5000 Stücke:
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AnzahlPrivatkunde
5000+2.23 EUR
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TLE8457ALEXUMA1 Infineon-TLE8457-DS-v01_00-EN.pdf?fileId=5546d46259d9a4bf015a3d3694ae6179
TLE8457ALEXUMA1
Hersteller: Infineon Technologies
Description: IC TRANSCEIVER 1/1 TSON-8
Part Status: Not For New Designs
Receiver Hysteresis: 175 mV
Supplier Device Package: PG-TSON-8-1
Protocol: LINbus
Number of Drivers/Receivers: 1/1
Voltage - Supply: 5V
Operating Temperature: -40°C ~ 150°C
Type: Transceiver
Mounting Type: Surface Mount, Wettable Flank
Package / Case: 8-TDFN Exposed Pad
Packaging: Cut Tape (CT)
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
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5+4.32 EUR
10+3.87 EUR
25+3.65 EUR
100+3.11 EUR
250+2.92 EUR
500+2.56 EUR
1000+2.23 EUR
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BSO083N03MSG INFNS16223-1.pdf?t.download=true&u=5oefqw
BSO083N03MSG
Hersteller: Infineon Technologies
Description: N-CHANNEL POWER MOSFET
Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PG-DSO-8
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 1.56W (Ta)
Rds On (Max) @ Id, Vgs: 8.3mOhm @ 14A, 10V
Current - Continuous Drain (Id) @ 25°C: 11A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Bulk
auf Bestellung 1690 Stücke:
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AnzahlPrivatkunde
1250+0.5 EUR
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AIDW16S65C5XKSA1 Infineon-AIDW16S65C5-DS-v01_03-EN.pdf?fileId=5546d462675a6972016773c2d4eb5680
AIDW16S65C5XKSA1
Hersteller: Infineon Technologies
Description: DIODE SIL CARB 650V 16A TO247-3
Qualification: AEC-Q100/101
Current - Reverse Leakage @ Vr: 90 µA @ 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 16 A
Voltage - DC Reverse (Vr) (Max): 650 V
Grade: Automotive
Operating Temperature - Junction: -40°C ~ 175°C
Supplier Device Package: PG-TO247-3-41
Current - Average Rectified (Io): 16A
Capacitance @ Vr, F: 471pF @ 1V, 1MHz
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Produkt ist nicht verfügbar
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AIDW20S65C5XKSA1 Infineon-AIDW20S65C5-DS-v01_03-EN.pdf?fileId=5546d462675a6972016773c2ecdd5689
AIDW20S65C5XKSA1
Hersteller: Infineon Technologies
Description: DIODE SIL CARB 650V 20A TO247-3
Supplier Device Package: PG-TO247-3-41
Current - Average Rectified (Io): 20A
Capacitance @ Vr, F: 584pF @ 1V, 1MHz
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Current - Reverse Leakage @ Vr: 120 µA @ 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 20 A
Voltage - DC Reverse (Vr) (Max): 650 V
Part Status: Last Time Buy
Operating Temperature - Junction: -40°C ~ 175°C
auf Bestellung 240 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2+16.95 EUR
10+15.3 EUR
100+12.67 EUR
Mindestbestellmenge: 2 Stücke
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AIDW30S65C5XKSA1 Infineon-AIDW30S65C5-DS-v01_03-EN.pdf?fileId=5546d462675a6972016773c2de0c5683
AIDW30S65C5XKSA1
Hersteller: Infineon Technologies
Description: DIODE SIL CARB 650V 30A TO247-3
auf Bestellung 176 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2+20.06 EUR
10+18.12 EUR
100+15.01 EUR
Mindestbestellmenge: 2 Stücke
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TZ800N16KOFTIMHPSA1 Infineon-TZ800N-DS-v03_05-EN.pdf?fileId=db3a304412b407950112b42f8b8e4c29
TZ800N16KOFTIMHPSA1
Hersteller: Infineon Technologies
Description: SCR MODULE 1800V 1500A MODULE
auf Bestellung 1 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1+1179.37 EUR
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TD250N16KOFTIMHPSA1 Infineon-TT250N-DataSheet-v03_04-EN.pdf?fileId=5546d4627112d9d501712afa3b233fcd
TD250N16KOFTIMHPSA1
Hersteller: Infineon Technologies
Description: SCR MODULE 1800V 410A MODULE
auf Bestellung 1 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1+454.1 EUR
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TT250N16KOFTIMHPSA1 Infineon-TT250N-DataSheet-v03_04-EN.pdf?fileId=5546d4627112d9d501712afa3b233fcd
TT250N16KOFTIMHPSA1
Hersteller: Infineon Technologies
Description: SCR MODULE 1800V 410A MODULE
auf Bestellung 3 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1+473 EUR
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TT330N16KOFTIMHPSA1 Infineon-TT330N-DS-v03_04-EN.pdf?fileId=5546d46269e1c019016a0c69cb4f4b54
TT330N16KOFTIMHPSA1
Hersteller: Infineon Technologies
Description: SCR MODULE 1600V 520A MODULE
auf Bestellung 3 Stücke:
Lieferzeit 10-14 Tag (e)
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TT500N16KOFTIMHPSA1 Infineon-TT500N-DS-v03_04-EN.pdf?fileId=db3a30434486a89301448d34d0f7790d
TT500N16KOFTIMHPSA1
Hersteller: Infineon Technologies
Description: SCR MODULE 1800V 900A MODULE
auf Bestellung 1 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1+766.93 EUR
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TD600N16KOFTIMHPSA1 Infineon-TT600N16KOF-DS-v03_03-EN.pdf?fileId=5546d461464245d301466688b00360e0
TD600N16KOFTIMHPSA1
Hersteller: Infineon Technologies
Description: SCR MODULE 1600V 1050A MODULE
Voltage - Off State: 1.6 kV
Current - On State (It (RMS)) (Max): 1050 A
Part Status: Active
Voltage - Gate Trigger (Vgt) (Max): 2 V
Current - On State (It (AV)) (Max): 600 A
Number of SCRs, Diodes: 1 SCR, 1 Diode
Current - Non Rep. Surge 50, 60Hz (Itsm): 21000A @ 50Hz
Current - Gate Trigger (Igt) (Max): 250 mA
Current - Hold (Ih) (Max): 300 mA
Structure: Series Connection - SCR/Diode
Operating Temperature: -40°C ~ 125°C
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Tray
auf Bestellung 1 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1+790.28 EUR
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V611480MHPSA1 Infineon-CLAMP_V61_14_80M-DS-v03_00-en_de.pdf?fileId=5546d46145f1f3a401461e177a6a1d5f
Hersteller: Infineon Technologies
Description: CLAMP DISK DEVICES 48MM HOUSINGS
auf Bestellung 3 Stücke:
Lieferzeit 10-14 Tag (e)
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V501445MHPSA1 Infineon-Clamp_for_disc_devices_V50..M-DS-v03_00-EN.pdf?fileId=5546d462525dbac401532d7110a909aa
Hersteller: Infineon Technologies
Description: CLAMP DISK DEVICES 42MM HOUSINGS
Produkt ist nicht verfügbar
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