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2EDF7175FXUMA2 2EDF7175FXUMA2 Infineon Technologies Infineon-2EDF7275F-DS-v02_04-EN.pdf?fileId=5546d462636cc8fb0163b08fd9203057 Description: IC GATE DRVR HALF-BRIDG DSO16
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 20V
Input Type: Non-Inverting
Supplier Device Package: PG-DSO-16-11
Rise / Fall Time (Typ): 6.5ns, 4.5ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: MOSFET (N-Channel, P-Channel)
Logic Voltage - VIL, VIH: -, 1.65V
Current - Peak Output (Source, Sink): 1A, 2A
DigiKey Programmable: Not Verified
auf Bestellung 7500 Stücke:
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2500+1.77 EUR
Mindestbestellmenge: 2500
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2EDF7275FXUMA2 2EDF7275FXUMA2 Infineon Technologies Infineon-2EDF7275F-DS-v02_04-EN.pdf?fileId=5546d462636cc8fb0163b08fd9203057 Description: IC GATE DRVR HALF-BRIDG DSO16
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 1500 V
Supplier Device Package: PG-DSO-16-11
Rise / Fall Time (Typ): 6.5ns, 4.5ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: MOSFET (N-Channel, P-Channel)
Logic Voltage - VIL, VIH: -, 1.65V
Current - Peak Output (Source, Sink): 4A, 8A
Part Status: Active
DigiKey Programmable: Not Verified
auf Bestellung 5000 Stücke:
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2500+1.96 EUR
5000+1.92 EUR
Mindestbestellmenge: 2500
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2EDS8165HXUMA1 2EDS8165HXUMA1 Infineon Technologies Infineon-2EDF7175F-DS-v02_00-EN.pdf?fileId=5546d462636cc8fb0163b09026be3060 Description: IC GATE DRVR HALF-BRIDGE 16SOIC
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 20V
Input Type: Non-Inverting
Supplier Device Package: PG-DSO-16-30
Rise / Fall Time (Typ): 6.5ns, 4.5ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: MOSFET (N-Channel, P-Channel)
Logic Voltage - VIL, VIH: -, 1.65V
Current - Peak Output (Source, Sink): 1A, 2A
Part Status: Discontinued at Digi-Key
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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2EDS8265HXUMA1 2EDS8265HXUMA1 Infineon Technologies Infineon-2EDF7175F-DS-v02_00-EN.pdf?fileId=5546d462636cc8fb0163b09026be3060 Description: IC GATE DRVR HALF-BRIDGE 16SOIC
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 20V
Input Type: Non-Inverting
Supplier Device Package: PG-DSO-16-30
Rise / Fall Time (Typ): 6.5ns, 4.5ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: MOSFET (N-Channel, P-Channel)
Logic Voltage - VIL, VIH: -, 1.65V
Current - Peak Output (Source, Sink): 4A, 8A
Part Status: Discontinued at Digi-Key
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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2EDS8265HXUMA1 2EDS8265HXUMA1 Infineon Technologies Infineon-2EDF7175F-DS-v02_00-EN.pdf?fileId=5546d462636cc8fb0163b09026be3060 Description: IC GATE DRVR HALF-BRIDGE 16SOIC
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 20V
Input Type: Non-Inverting
Supplier Device Package: PG-DSO-16-30
Rise / Fall Time (Typ): 6.5ns, 4.5ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: MOSFET (N-Channel, P-Channel)
Logic Voltage - VIL, VIH: -, 1.65V
Current - Peak Output (Source, Sink): 4A, 8A
Part Status: Discontinued at Digi-Key
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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2EDS9265HXUMA1 2EDS9265HXUMA1 Infineon Technologies Infineon-2EDF7275F-DS-v02_04-EN.pdf?fileId=5546d462636cc8fb0163b08fd9203057 Description: IC GATE DRVR HALF-BRIDGE 16SOIC
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 650 V
Supplier Device Package: PG-DSO-16-30
Rise / Fall Time (Typ): 6.5ns, 4.5ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, SiC MOSFET
Logic Voltage - VIL, VIH: -, 1.65V
Current - Peak Output (Source, Sink): 4A, 8A
Part Status: Active
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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2EDS9265HXUMA1 2EDS9265HXUMA1 Infineon Technologies Infineon-2EDF7275F-DS-v02_04-EN.pdf?fileId=5546d462636cc8fb0163b08fd9203057 Description: IC GATE DRVR HALF-BRIDGE 16SOIC
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 650 V
Supplier Device Package: PG-DSO-16-30
Rise / Fall Time (Typ): 6.5ns, 4.5ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, SiC MOSFET
Logic Voltage - VIL, VIH: -, 1.65V
Current - Peak Output (Source, Sink): 4A, 8A
Part Status: Active
DigiKey Programmable: Not Verified
auf Bestellung 464 Stücke:
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6+3.41 EUR
10+2.54 EUR
25+2.31 EUR
100+2.07 EUR
250+1.95 EUR
Mindestbestellmenge: 6
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2EDS8165HXUMA2 2EDS8165HXUMA2 Infineon Technologies Infineon-2EDF7275F-DS-v02_04-EN.pdf?fileId=5546d462636cc8fb0163b08fd9203057 Description: IC GATE DRVR HALF-BRIDGE 16SOIC
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 20V
Input Type: Non-Inverting
Supplier Device Package: PG-DSO-16-30
Rise / Fall Time (Typ): 6.5ns, 4.5ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: MOSFET (N-Channel, P-Channel)
Logic Voltage - VIL, VIH: -, 1.65V
Current - Peak Output (Source, Sink): 1A, 2A
Part Status: Active
DigiKey Programmable: Not Verified
auf Bestellung 1000 Stücke:
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1000+1.83 EUR
Mindestbestellmenge: 1000
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2EDS8265HXUMA2 2EDS8265HXUMA2 Infineon Technologies Infineon-2EDF7275F-DS-v02_04-EN.pdf?fileId=5546d462636cc8fb0163b08fd9203057 Description: IC GATE DRVR HALF-BRIDGE 16SOIC
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 20V
Input Type: Non-Inverting
Supplier Device Package: PG-DSO-16-30
Rise / Fall Time (Typ): 6.5ns, 4.5ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: MOSFET (N-Channel, P-Channel)
Logic Voltage - VIL, VIH: -, 1.65V
Current - Peak Output (Source, Sink): 4A, 8A
Part Status: Active
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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TLF35584QVVS1XUMA2 TLF35584QVVS1XUMA2 Infineon Technologies Infineon-TLF35584QV-ProductOverview-DataSheet-v01_00-EN.pdf?fileId=5546d46279cccfdb0179ce150fc81cbf Description: IC REG AUTO APPL 1OUT VQFN-48-31
Packaging: Tape & Reel (TR)
Package / Case: 48-VFQFN Exposed Pad
Voltage - Output: 5V
Mounting Type: Surface Mount
Number of Outputs: 1
Voltage - Input: 3V ~ 40V
Operating Temperature: -40°C ~ 150°C (TJ)
Applications: Power Supply, Automotive Applications
Supplier Device Package: PG-VQFN-48-31
Part Status: Active
Produkt ist nicht verfügbar
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TLF35584QVVS1XUMA2 TLF35584QVVS1XUMA2 Infineon Technologies Infineon-TLF35584QV-ProductOverview-DataSheet-v01_00-EN.pdf?fileId=5546d46279cccfdb0179ce150fc81cbf Description: IC REG AUTO APPL 1OUT VQFN-48-31
Packaging: Cut Tape (CT)
Package / Case: 48-VFQFN Exposed Pad
Voltage - Output: 5V
Mounting Type: Surface Mount
Number of Outputs: 1
Voltage - Input: 3V ~ 40V
Operating Temperature: -40°C ~ 150°C (TJ)
Applications: Power Supply, Automotive Applications
Supplier Device Package: PG-VQFN-48-31
Part Status: Active
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2+12.36 EUR
10+8.41 EUR
100+6.53 EUR
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SGW30N60 SGW30N60 Infineon Technologies INFNS14175-1.pdf?t.download=true&u=5oefqw Description: IGBT, 41A I(C), 600V V(BR)CES, N
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 30A
Supplier Device Package: PG-TO247-3-21
IGBT Type: NPT
Td (on/off) @ 25°C: 44ns/291ns
Switching Energy: 640µJ (on), 650µJ (off)
Test Condition: 400V, 30A, 11Ohm, 15V
Gate Charge: 140 nC
Part Status: Active
Current - Collector (Ic) (Max): 41 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 112 A
Power - Max: 250 W
Produkt ist nicht verfügbar
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SPI20N65C3 SPI20N65C3 Infineon Technologies Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Part Status: Active
Produkt ist nicht verfügbar
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TLE42712AKSA1 TLE42712AKSA1 Infineon Technologies TLE 4271-2.pdf Description: IC REG LIN 5V 550MA TO220-7-11
Packaging: Bulk
Package / Case: TO-220-7 Formed Leads
Output Type: Fixed
Mounting Type: Through Hole
Current - Output: 550mA
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 6 µA
Voltage - Input (Max): 40V
Number of Regulators: 1
Supplier Device Package: P-TO220-7-11
Voltage - Output (Min/Fixed): 5V
Control Features: Reset, Watchdog
Part Status: Obsolete
PSRR: 54dB (100Hz)
Voltage Dropout (Max): 0.7V @ 550mA
Protection Features: Over Current, Over Temperature, Over Voltage, Reverse Polarity, Short Circuit
Current - Supply (Max): 90 mA
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205+2.45 EUR
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SPD08N50C3 SPD08N50C3 Infineon Technologies Infineon-SPD08N50C3-DS-v02_06-en.pdf?fileId=db3a30433f1b26e8013f1ea5b45f0334 Description: COOLMOS, 7.6A, 500V, 0.6OHM, N-C
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.6A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 4.6A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 350µA
Supplier Device Package: PG-TO252-3-313
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 750 pF @ 25 V
Produkt ist nicht verfügbar
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PMB3543E6327XQSA1 Infineon Technologies Description: TELECOM IC
Packaging: Bulk
auf Bestellung 119 Stücke:
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7+78.98 EUR
Mindestbestellmenge: 7
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FS3L200R10W3S7FB11BPSA1 FS3L200R10W3S7FB11BPSA1 Infineon Technologies Infineon-FS3L200R10W3S7F_B11-DataSheet-v03_00-EN.pdf?fileId=5546d46271bf4f920172079cc70479ac Description: IGBT MODULE LOW POWER EASY
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Level Inverter
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.55V @ 15V, 25A
NTC Thermistor: Yes
Supplier Device Package: AG-EASY3B
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 70 A
Voltage - Collector Emitter Breakdown (Max): 950 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 31 µA
Input Capacitance (Cies) @ Vce: 6.48 nF @ 25 V
auf Bestellung 19 Stücke:
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1+258.24 EUR
16+231.12 EUR
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F3L400R10W3S7FB11BPSA1 F3L400R10W3S7FB11BPSA1 Infineon Technologies Infineon-F3L400R10W3S7F_B11-DataSheet-v03_00-EN.pdf?fileId=5546d46271bf4f920172078a6a58799d Description: IGBT MODULE LOW POWER EASY
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Level Inverter
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 150A
NTC Thermistor: Yes
Supplier Device Package: AG-EASY3B
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 220 A
Voltage - Collector Emitter Breakdown (Max): 950 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 71 µA
Input Capacitance (Cies) @ Vce: 49.2 nF @ 25 V
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EVAL2ED020I12F2TOBO1 EVAL2ED020I12F2TOBO1 Infineon Technologies Infineon-EVAL_2ED020I12-F2-ApplicationNotes-v01_00-EN.pdf?fileId=db3a304340155f3d014029a78ed602f3 Description: EVAL BOARD FOR 2ED020I12-F2
Packaging: Bulk
Function: Gate Driver
Type: Power Management
Utilized IC / Part: 2ED020I12-F2
Supplied Contents: Board(s)
Part Status: Active
Contents: Board(s)
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KITAURIXTC275ARDSBTOBO1 KITAURIXTC275ARDSBTOBO1 Infineon Technologies Infineon-ShieldBuddy_TC275%20-UM-v02_08-EN.pdf?fileId=5546d46269e1c019016a54f0801a5590 Description: SHIELDBUDDYTC275-AURIX
Packaging: Box
Mounting Type: Fixed
Type: MCU 32-Bit
Contents: Board(s), LCD
Core Processor: TriCore™
Utilized IC / Part: TC275
Platform: AURIX
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PTFA181001FV4R250FTMA1 PTFA181001FV4R250FTMA1 Infineon Technologies PTFA181001%28E%2CF%29.pdf Description: RF MOSFET LDMOS 28V H-37248-2
Packaging: Tape & Reel (TR)
Package / Case: 2-Flatpack, Fin Leads, Flanged
Current Rating (Amps): 1µA
Mounting Type: Surface Mount
Frequency: 1.88GHz
Power - Output: 100W
Gain: 16.5dB
Technology: LDMOS
Supplier Device Package: H-37248-2
Voltage - Rated: 65 V
Voltage - Test: 28 V
Current - Test: 750 mA
Produkt ist nicht verfügbar
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IRLR3636TRLPBF IRLR3636TRLPBF Infineon Technologies IRSDS10828-1.pdf?t.download=true&u=5oefqw Description: MOSFET N-CH 60V 50A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 6.8mOhm @ 50A, 10V
Power Dissipation (Max): 143W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 100µA
Supplier Device Package: TO-252AA (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 3779 pF @ 50 V
auf Bestellung 583 Stücke:
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5+3.94 EUR
10+2.54 EUR
100+1.74 EUR
500+1.4 EUR
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IRFR3504ZTR IRFR3504ZTR Infineon Technologies IRFR3504Z%2C%20IRFU3504Z.pdf Description: MOSFET N-CH 40V 42A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 42A, 10V
Power Dissipation (Max): 90W (Tc)
Vgs(th) (Max) @ Id: 4V @ 50µA
Supplier Device Package: TO-252AA (DPAK)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1510 pF @ 25 V
Produkt ist nicht verfügbar
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IRFR3504ZTRL IRFR3504ZTRL Infineon Technologies IRFR3504Z%2C%20IRFU3504Z.pdf Description: MOSFET N-CH 40V 42A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 42A, 10V
Power Dissipation (Max): 90W (Tc)
Vgs(th) (Max) @ Id: 4V @ 50µA
Supplier Device Package: TO-252AA (DPAK)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1510 pF @ 25 V
Produkt ist nicht verfügbar
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IRFR3504ZTRR IRFR3504ZTRR Infineon Technologies IRFR3504Z,%20IRFU3504Z.pdf Description: MOSFET N-CH 40V 42A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 42A, 10V
Power Dissipation (Max): 90W (Tc)
Vgs(th) (Max) @ Id: 4V @ 50µA
Supplier Device Package: D-Pak
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1510 pF @ 25 V
Produkt ist nicht verfügbar
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64-4059PBF 64-4059PBF Infineon Technologies irfr3504zpbf.pdf?fileId=5546d462533600a4015356311d09209b Description: MOSFET N-CH 40V 42A DPAK
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 42A, 10V
Power Dissipation (Max): 90W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1510 pF @ 25 V
Produkt ist nicht verfügbar
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IRFR3504ZTRLPBF IRFR3504ZTRLPBF Infineon Technologies irfr3504zpbf.pdf?fileId=5546d462533600a4015356311d09209b Description: MOSFET N-CH 40V 42A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 42A, 10V
Power Dissipation (Max): 90W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1510 pF @ 25 V
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IRFR3504ZTRRPBF IRFR3504ZTRRPBF Infineon Technologies irfr3504zpbf.pdf?fileId=5546d462533600a4015356311d09209b Description: MOSFET N-CH 40V 42A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 42A, 10V
Power Dissipation (Max): 90W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1510 pF @ 25 V
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BCR169WE6327 BCR169WE6327 Infineon Technologies INFNS11715-1.pdf?t.download=true&u=5oefqw Description: TRANS PREBIAS PNP 50V SOT323-3
Packaging: Bulk
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 5mA, 5V
Supplier Device Package: PG-SOT323-3-1
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 250 mW
Frequency - Transition: 200 MHz
Resistor - Base (R1): 4.7 kOhms
Grade: Automotive
Qualification: AEC-Q101
Resistors Included: R1 Only
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TLF50281ELXUMA1 TLF50281ELXUMA1 Infineon Technologies Infineon-TLF50281EL-DS-v01_01-EN.pdf?fileId=5546d46258fc0bc1015969d2c73f41f2 Description: IC REG BUCK 5V 500MA PGSSOP14
Packaging: Bulk
Package / Case: 14-LSSOP (0.154", 3.90mm Width) Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 500mA
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Frequency - Switching: 2.2MHz
Voltage - Input (Max): 45V
Topology: Buck
Supplier Device Package: PG-SSOP-14-EP
Synchronous Rectifier: No
Voltage - Input (Min): 4.75V
Voltage - Output (Min/Fixed): 5V
Part Status: Obsolete
Grade: Automotive
Qualification: AEC-Q100
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IPD30N06S3-24 IPD30N06S3-24 Infineon Technologies INFNS11065-1.pdf?t.download=true&u=5oefqw Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A
Supplier Device Package: PG-TO252-3-11
Part Status: Active
Drain to Source Voltage (Vdss): 55 V
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IPD230N06LG IPD230N06LG Infineon Technologies INFNS15837-1.pdf?t.download=true&u=5oefqw Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 23mOhm @ 30A, 10V
Vgs(th) (Max) @ Id: 2V @ 49µA
Supplier Device Package: PG-TO252-3
Part Status: Active
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 30 V
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IPB230N06L3G IPB230N06L3G Infineon Technologies INFNS19526-1.pdf?t.download=true&u=5oefqw Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 23mOhm @ 30A, 10V
Power Dissipation (Max): 36W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 11µA
Supplier Device Package: PG-TO263-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 30 V
Produkt ist nicht verfügbar
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IPP230N06L3GXKSA1 IPP230N06L3GXKSA1 Infineon Technologies INFNS19526-1.pdf?t.download=true&u=5oefqw Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A
Rds On (Max) @ Id, Vgs: 23mOhm @ 30A, 10V
Power Dissipation (Max): 36W
Vgs(th) (Max) @ Id: 2.2V @ 11µA
Supplier Device Package: PG-TO220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 30 V
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IPP230N06L3G IPP230N06L3G Infineon Technologies INFNS19526-1.pdf?t.download=true&u=5oefqw Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 23mOhm @ 30A, 10V
Power Dissipation (Max): 36W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 11µA
Supplier Device Package: PG-TO220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 30 V
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BGA420H6433XTMA1 BGA420H6433XTMA1 Infineon Technologies bga420.pdf?folderId=db3a30431441fb5d0114b654e6581730&fileId=db3a304314dca3890115418cec781637 Description: IC RF AMP GPS 0HZ-3GHZ SOT343-3D
Packaging: Bulk
Package / Case: SC-82A, SOT-343
Mounting Type: Surface Mount
Frequency: 0Hz ~ 3GHz
RF Type: General Purpose
Voltage - Supply: 3V ~ 6V
Gain: 13dB
Current - Supply: 6.7mA
Noise Figure: 2.3dB
P1dB: -2.5dBm
Test Frequency: 1GHz
Supplier Device Package: PG-SOT343-3D
Part Status: Obsolete
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ICE3RBR0665JZXKLA1 ICE3RBR0665JZXKLA1 Infineon Technologies INFNS27653-1.pdf?t.download=true&u=5oefqw Description: IC OFFLINE SWITCH FLYBACK 7DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm), 7 Leads
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Duty Cycle: 75%
Frequency - Switching: 65kHz
Internal Switch(s): Yes
Voltage - Breakdown: 650V
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 10.5V ~ 25V
Supplier Device Package: PG-DIP-7-1
Fault Protection: Over Load, Over Temperature, Over Voltage
Voltage - Start Up: 18 V
Part Status: Active
Power (Watts): 71 W
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ICE3RBR0665JGXUMA1 ICE3RBR0665JGXUMA1 Infineon Technologies Infineon-ICE3RBR0665JG-DS-v01_00-EN.pdf?fileId=5546d46253f6505701549aaf5c8c7514 Description: IC OFFLINE SWITCH FLYBACK 12DSO
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.154", 3.90mm Width), 12 Leads
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Duty Cycle: 75%
Frequency - Switching: 65kHz
Internal Switch(s): Yes
Voltage - Breakdown: 650V
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 10.5V ~ 25V
Supplier Device Package: PG-DSO-12-19
Fault Protection: Over Load, Over Temperature, Over Voltage
Voltage - Start Up: 18 V
Part Status: Active
Power (Watts): 66 W
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ICE3RBR0665JGXUMA1 ICE3RBR0665JGXUMA1 Infineon Technologies Infineon-ICE3RBR0665JG-DS-v01_00-EN.pdf?fileId=5546d46253f6505701549aaf5c8c7514 Description: IC OFFLINE SWITCH FLYBACK 12DSO
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.154", 3.90mm Width), 12 Leads
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Duty Cycle: 75%
Frequency - Switching: 65kHz
Internal Switch(s): Yes
Voltage - Breakdown: 650V
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 10.5V ~ 25V
Supplier Device Package: PG-DSO-12-19
Fault Protection: Over Load, Over Temperature, Over Voltage
Voltage - Start Up: 18 V
Part Status: Active
Power (Watts): 66 W
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FP15R06YE3B4BOMA1 Infineon Technologies Description: MOD IGBT LOW PWR EASY2-1
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FZ2000R33HE4BOSA1 FZ2000R33HE4BOSA1 Infineon Technologies Infineon-FZ2000R33HE4-DataSheet-v02_01-EN.pdf?fileId=5546d4626eab8fbf016ed15a9df22af8 Description: IGBT MOD 3300V 2000A AGIHVB190-3
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single Switch
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 2kA (Typ)
NTC Thermistor: No
Supplier Device Package: AG-IHVB190-3
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 2000 A
Voltage - Collector Emitter Breakdown (Max): 3300 V
Power - Max: 4200 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 280 nF @ 25 V
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IPU50R950CE IPU50R950CE Infineon Technologies INFN-S-A0002263195-1.pdf?t.download=true&u=5oefqw Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.6A (Tc)
Rds On (Max) @ Id, Vgs: 950mOhm @ 1.2A, 13V
Power Dissipation (Max): 53W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 100µA
Supplier Device Package: PG-TO251-3
Drive Voltage (Max Rds On, Min Rds On): 13V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 10.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 231 pF @ 100 V
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IPU50R950CEBTMA1 IPU50R950CEBTMA1 Infineon Technologies INFN-S-A0001301404-1.pdf?t.download=true&u=5oefqw Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.3A (Tc)
Rds On (Max) @ Id, Vgs: 950mOhm @ 1.2A, 13V
Power Dissipation (Max): 34W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 100µA
Supplier Device Package: PG-TO251-3-345
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 13V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 10.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 231 pF @ 100 V
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DHS1011AUMA1 DHS1011AUMA1 Infineon Technologies Description: DSO-12-13
Packaging: Bulk
Produkt ist nicht verfügbar
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BCW68GE6327 BCW68GE6327 Infineon Technologies INFNS11571-1.pdf?t.download=true&u=5oefqw Description: SMALL SIGNAL BIPOLAR TRANSISTOR
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 20nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 100mA, 1V
Frequency - Transition: 200MHz
Supplier Device Package: PG-SOT23-3-1
Part Status: Active
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 330 mW
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CYUSB3014-FBXCT CYUSB3014-FBXCT Infineon Technologies download Description: IC USB CTLR
Packaging: Tape & Reel (TR)
Package / Case: 131-UFBGA, WLCSP
Mounting Type: Surface Mount
Interface: GPIF, I2C, I2S, SPI, UART, USB
RAM Size: 512K x 8
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 1.15V ~ 1.25V
Controller Series: CYUSB
Program Memory Type: External Program Memory
Applications: SuperSpeed USB Peripheral Controller
Core Processor: ARM9®
Supplier Device Package: 131-WLCSP (5.1x4.7)
Part Status: Obsolete
Number of I/O: 60
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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IRGB30B60KPBF-INF Infineon Technologies Description: IGBT, 75A I(C), 600V V(BR)CES, N
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IRGB15B60KDPBF-INF IRGB15B60KDPBF-INF Infineon Technologies IRSDS10534-1.pdf?t.download=true&u=5oefqw Description: IGBT NPT 600V 31A TO-220AB
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 92 ns
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 15A
Supplier Device Package: TO-220AB
IGBT Type: NPT
Td (on/off) @ 25°C: 34ns/184ns
Switching Energy: 220µJ (on), 340µJ (off)
Test Condition: 400V, 15A, 22Ohm, 15V
Gate Charge: 84 nC
Part Status: Active
Current - Collector (Ic) (Max): 31 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 62 A
Power - Max: 208 W
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IRGB4B60KPBF IRGB4B60KPBF Infineon Technologies Part_Number_Guide_Web.pdf Description: IGBT 600V 12A 63W TO220A
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 4A
Supplier Device Package: TO-220AB
IGBT Type: NPT
Td (on/off) @ 25°C: 22ns/100ns
Switching Energy: 130µJ (on), 83µJ (off)
Test Condition: 400V, 4A, 100Ohm, 15V
Gate Charge: 12 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 12 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 24 A
Power - Max: 63 W
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CY96F673ABPMC1-GS109UJE2 CY96F673ABPMC1-GS109UJE2 Infineon Technologies download Description: IC MCU 16BIT 96KB FLASH 64LQFP
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CY96F693ABPMC-GS109-UJE2 CY96F693ABPMC-GS109-UJE2 Infineon Technologies Infineon-CY96690_Series_F2MC-16FX_16-bit_Proprietary_Microcontroller-AdditionalTechnicalInformation-v05_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0edd4ab561a3&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all Description: IC MCU 16BIT 96KB FLASH 100LQFP
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CYW20706UA1KFFB1GT CYW20706UA1KFFB1GT Infineon Technologies download Description: IC RF TXRX+MCU BLE 49FCBGA
Packaging: Tape & Reel (TR)
Package / Case: 49-VFBGA, FCBGA
Sensitivity: -96.5dBm
Mounting Type: Surface Mount
Frequency: 2.4GHz
Memory Size: 848kB ROM, 352kB RAM
Type: TxRx + MCU
Operating Temperature: -30°C ~ 85°C
Voltage - Supply: 3.3V
Power - Output: 12dBm
Protocol: Bluetooth v4.2
Current - Receiving: 12.5mA
Data Rate (Max): 2Mbps
Current - Transmitting: 26.5mA
Supplier Device Package: 49-FCBGA (4.5x4)
GPIO: 7
RF Family/Standard: Bluetooth
Serial Interfaces: I2C, I2S, SPI, UART
DigiKey Programmable: Not Verified
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CYW20706UA1KFFB1G CYW20706UA1KFFB1G Infineon Technologies download Description: IC RF TXRX+MCU BLE 49FCBGA
Packaging: Tray
Package / Case: 49-VFBGA, FCBGA
Sensitivity: -96.5dBm
Mounting Type: Surface Mount
Frequency: 2.4GHz
Memory Size: 848kB ROM, 352kB RAM
Type: TxRx + MCU
Operating Temperature: -30°C ~ 85°C
Voltage - Supply: 3.3V
Power - Output: 12dBm
Protocol: Bluetooth v4.2
Current - Receiving: 12.5mA
Data Rate (Max): 2Mbps
Current - Transmitting: 26.5mA
Supplier Device Package: 49-FCBGA (4.5x4)
GPIO: 7
RF Family/Standard: Bluetooth
Serial Interfaces: I2C, I2S, SPI, UART
Part Status: Active
DigiKey Programmable: Not Verified
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CYW20706UA1KFFB1GT CYW20706UA1KFFB1GT Infineon Technologies download Description: IC RF TXRX+MCU BLE 49FCBGA
Packaging: Tape & Reel (TR)
Package / Case: 49-VFBGA, FCBGA
Sensitivity: -96.5dBm
Mounting Type: Surface Mount
Frequency: 2.4GHz
Memory Size: 848kB ROM, 352kB RAM
Type: TxRx + MCU
Operating Temperature: -30°C ~ 85°C
Voltage - Supply: 3.3V
Power - Output: 12dBm
Protocol: Bluetooth v4.2
Current - Receiving: 12.5mA
Data Rate (Max): 2Mbps
Current - Transmitting: 26.5mA
Supplier Device Package: 49-FCBGA (4.5x4)
GPIO: 7
RF Family/Standard: Bluetooth
Serial Interfaces: I2C, I2S, SPI, UART
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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CYW20706UA1KFFB4G CYW20706UA1KFFB4G Infineon Technologies download Description: IC RF TXRX+MCU BLE 49FCBGA
Packaging: Tray
Package / Case: 49-VFBGA, FCBGA
Sensitivity: -96.5dBm
Mounting Type: Surface Mount
Frequency: 2.4GHz
Memory Size: 848kB ROM, 352kB RAM
Type: TxRx + MCU
Operating Temperature: -30°C ~ 85°C
Voltage - Supply: 3.3V
Power - Output: 12dBm
Protocol: Bluetooth v4.2
Current - Receiving: 12.5mA
Data Rate (Max): 2Mbps
Current - Transmitting: 26.5mA
Supplier Device Package: 49-FCBGA (4.5x4)
GPIO: 7
RF Family/Standard: Bluetooth
Serial Interfaces: I2C, I2S, SPI, UART
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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CY7C1327G-166AXC CY7C1327G-166AXC Infineon Technologies Infineon-CY7C1327G_4-Mbit_(256_K_18)_Pipelined_Sync_SRAM-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec41d4b3988 Description: IC SRAM 4.5MBIT PAR 100TQFP
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Memory Size: 4.5Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 3.15V ~ 3.6V
Technology: SRAM - Synchronous, SDR
Clock Frequency: 166 MHz
Memory Format: SRAM
Supplier Device Package: 100-TQFP (14x20)
Memory Interface: Parallel
Access Time: 3.5 ns
Memory Organization: 256K x 18
DigiKey Programmable: Not Verified
auf Bestellung 348 Stücke:
Lieferzeit 10-14 Tag (e)
5+3.68 EUR
Mindestbestellmenge: 5
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IMW65R072M1HXKSA1 IMW65R072M1HXKSA1 Infineon Technologies Infineon-IMW65R072M1H-DataSheet-v02_00-EN.pdf?fileId=5546d4626f229553016f85c9c62a0482 Description: MOSFET 650V NCH SIC TRENCH
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
Rds On (Max) @ Id, Vgs: 94mOhm @ 13.3A, 18V
Power Dissipation (Max): 96W (Tc)
Vgs(th) (Max) @ Id: 5.7V @ 4mA
Supplier Device Package: PG-TO247-3-41
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +23V, -5V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 744 pF @ 400 V
auf Bestellung 220 Stücke:
Lieferzeit 10-14 Tag (e)
2+10.96 EUR
30+6.33 EUR
120+5.31 EUR
Mindestbestellmenge: 2
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BSP78E6327 BSP78E6327 Infineon Technologies Description: POWER SWITCH SMART LOW
Packaging: Bulk
Part Status: Active
Produkt ist nicht verfügbar
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BTS141NKSA1 BTS141NKSA1 Infineon Technologies INFNS27674-1.pdf?t.download=true&u=5oefqw Description: BUFFER/INVERTER PERIPHL DRIVER
Packaging: Bulk
Features: Auto Restart, Slew Rate Controlled
Package / Case: TO-220-3
Output Type: N-Channel
Mounting Type: Through Hole
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Low Side
Rds On (Typ): 25mOhm
Input Type: Non-Inverting
Voltage - Load: 60V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 12A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-TO220-3-1
Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage, Short Circuit
Part Status: Active
Produkt ist nicht verfügbar
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BTS141E3045ANTMA1 Infineon Technologies INFNS27674-1.pdf?t.download=true&u=5oefqw Description: BUFFER/INVERTER PERIPHL DRIVER
Packaging: Bulk
Features: Auto Restart, Slew Rate Controlled
Package / Case: TO-220-3
Output Type: N-Channel
Mounting Type: Through Hole
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Low Side
Rds On (Typ): 25mOhm
Input Type: Non-Inverting
Voltage - Load: 60V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 12A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-TO220-3
Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage, Short Circuit
Part Status: Active
auf Bestellung 19358 Stücke:
Lieferzeit 10-14 Tag (e)
118+3.88 EUR
Mindestbestellmenge: 118
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2EDF7175FXUMA2 Infineon-2EDF7275F-DS-v02_04-EN.pdf?fileId=5546d462636cc8fb0163b08fd9203057
2EDF7175FXUMA2
Hersteller: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDG DSO16
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 20V
Input Type: Non-Inverting
Supplier Device Package: PG-DSO-16-11
Rise / Fall Time (Typ): 6.5ns, 4.5ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: MOSFET (N-Channel, P-Channel)
Logic Voltage - VIL, VIH: -, 1.65V
Current - Peak Output (Source, Sink): 1A, 2A
DigiKey Programmable: Not Verified
auf Bestellung 7500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2500+1.77 EUR
Mindestbestellmenge: 2500
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2EDF7275FXUMA2 Infineon-2EDF7275F-DS-v02_04-EN.pdf?fileId=5546d462636cc8fb0163b08fd9203057
2EDF7275FXUMA2
Hersteller: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDG DSO16
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 1500 V
Supplier Device Package: PG-DSO-16-11
Rise / Fall Time (Typ): 6.5ns, 4.5ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: MOSFET (N-Channel, P-Channel)
Logic Voltage - VIL, VIH: -, 1.65V
Current - Peak Output (Source, Sink): 4A, 8A
Part Status: Active
DigiKey Programmable: Not Verified
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2500+1.96 EUR
5000+1.92 EUR
Mindestbestellmenge: 2500
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2EDS8165HXUMA1 Infineon-2EDF7175F-DS-v02_00-EN.pdf?fileId=5546d462636cc8fb0163b09026be3060
2EDS8165HXUMA1
Hersteller: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 16SOIC
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 20V
Input Type: Non-Inverting
Supplier Device Package: PG-DSO-16-30
Rise / Fall Time (Typ): 6.5ns, 4.5ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: MOSFET (N-Channel, P-Channel)
Logic Voltage - VIL, VIH: -, 1.65V
Current - Peak Output (Source, Sink): 1A, 2A
Part Status: Discontinued at Digi-Key
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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2EDS8265HXUMA1 Infineon-2EDF7175F-DS-v02_00-EN.pdf?fileId=5546d462636cc8fb0163b09026be3060
2EDS8265HXUMA1
Hersteller: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 16SOIC
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 20V
Input Type: Non-Inverting
Supplier Device Package: PG-DSO-16-30
Rise / Fall Time (Typ): 6.5ns, 4.5ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: MOSFET (N-Channel, P-Channel)
Logic Voltage - VIL, VIH: -, 1.65V
Current - Peak Output (Source, Sink): 4A, 8A
Part Status: Discontinued at Digi-Key
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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2EDS8265HXUMA1 Infineon-2EDF7175F-DS-v02_00-EN.pdf?fileId=5546d462636cc8fb0163b09026be3060
2EDS8265HXUMA1
Hersteller: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 16SOIC
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 20V
Input Type: Non-Inverting
Supplier Device Package: PG-DSO-16-30
Rise / Fall Time (Typ): 6.5ns, 4.5ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: MOSFET (N-Channel, P-Channel)
Logic Voltage - VIL, VIH: -, 1.65V
Current - Peak Output (Source, Sink): 4A, 8A
Part Status: Discontinued at Digi-Key
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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2EDS9265HXUMA1 Infineon-2EDF7275F-DS-v02_04-EN.pdf?fileId=5546d462636cc8fb0163b08fd9203057
2EDS9265HXUMA1
Hersteller: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 16SOIC
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 650 V
Supplier Device Package: PG-DSO-16-30
Rise / Fall Time (Typ): 6.5ns, 4.5ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, SiC MOSFET
Logic Voltage - VIL, VIH: -, 1.65V
Current - Peak Output (Source, Sink): 4A, 8A
Part Status: Active
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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2EDS9265HXUMA1 Infineon-2EDF7275F-DS-v02_04-EN.pdf?fileId=5546d462636cc8fb0163b08fd9203057
2EDS9265HXUMA1
Hersteller: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 16SOIC
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 650 V
Supplier Device Package: PG-DSO-16-30
Rise / Fall Time (Typ): 6.5ns, 4.5ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, SiC MOSFET
Logic Voltage - VIL, VIH: -, 1.65V
Current - Peak Output (Source, Sink): 4A, 8A
Part Status: Active
DigiKey Programmable: Not Verified
auf Bestellung 464 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
6+3.41 EUR
10+2.54 EUR
25+2.31 EUR
100+2.07 EUR
250+1.95 EUR
Mindestbestellmenge: 6
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2EDS8165HXUMA2 Infineon-2EDF7275F-DS-v02_04-EN.pdf?fileId=5546d462636cc8fb0163b08fd9203057
2EDS8165HXUMA2
Hersteller: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 16SOIC
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 20V
Input Type: Non-Inverting
Supplier Device Package: PG-DSO-16-30
Rise / Fall Time (Typ): 6.5ns, 4.5ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: MOSFET (N-Channel, P-Channel)
Logic Voltage - VIL, VIH: -, 1.65V
Current - Peak Output (Source, Sink): 1A, 2A
Part Status: Active
DigiKey Programmable: Not Verified
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1000+1.83 EUR
Mindestbestellmenge: 1000
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2EDS8265HXUMA2 Infineon-2EDF7275F-DS-v02_04-EN.pdf?fileId=5546d462636cc8fb0163b08fd9203057
2EDS8265HXUMA2
Hersteller: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 16SOIC
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 20V
Input Type: Non-Inverting
Supplier Device Package: PG-DSO-16-30
Rise / Fall Time (Typ): 6.5ns, 4.5ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: MOSFET (N-Channel, P-Channel)
Logic Voltage - VIL, VIH: -, 1.65V
Current - Peak Output (Source, Sink): 4A, 8A
Part Status: Active
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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TLF35584QVVS1XUMA2 Infineon-TLF35584QV-ProductOverview-DataSheet-v01_00-EN.pdf?fileId=5546d46279cccfdb0179ce150fc81cbf
TLF35584QVVS1XUMA2
Hersteller: Infineon Technologies
Description: IC REG AUTO APPL 1OUT VQFN-48-31
Packaging: Tape & Reel (TR)
Package / Case: 48-VFQFN Exposed Pad
Voltage - Output: 5V
Mounting Type: Surface Mount
Number of Outputs: 1
Voltage - Input: 3V ~ 40V
Operating Temperature: -40°C ~ 150°C (TJ)
Applications: Power Supply, Automotive Applications
Supplier Device Package: PG-VQFN-48-31
Part Status: Active
Produkt ist nicht verfügbar
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TLF35584QVVS1XUMA2 Infineon-TLF35584QV-ProductOverview-DataSheet-v01_00-EN.pdf?fileId=5546d46279cccfdb0179ce150fc81cbf
TLF35584QVVS1XUMA2
Hersteller: Infineon Technologies
Description: IC REG AUTO APPL 1OUT VQFN-48-31
Packaging: Cut Tape (CT)
Package / Case: 48-VFQFN Exposed Pad
Voltage - Output: 5V
Mounting Type: Surface Mount
Number of Outputs: 1
Voltage - Input: 3V ~ 40V
Operating Temperature: -40°C ~ 150°C (TJ)
Applications: Power Supply, Automotive Applications
Supplier Device Package: PG-VQFN-48-31
Part Status: Active
auf Bestellung 261 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+12.36 EUR
10+8.41 EUR
100+6.53 EUR
Mindestbestellmenge: 2
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SGW30N60 INFNS14175-1.pdf?t.download=true&u=5oefqw
SGW30N60
Hersteller: Infineon Technologies
Description: IGBT, 41A I(C), 600V V(BR)CES, N
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 30A
Supplier Device Package: PG-TO247-3-21
IGBT Type: NPT
Td (on/off) @ 25°C: 44ns/291ns
Switching Energy: 640µJ (on), 650µJ (off)
Test Condition: 400V, 30A, 11Ohm, 15V
Gate Charge: 140 nC
Part Status: Active
Current - Collector (Ic) (Max): 41 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 112 A
Power - Max: 250 W
Produkt ist nicht verfügbar
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SPI20N65C3
SPI20N65C3
Hersteller: Infineon Technologies
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Part Status: Active
Produkt ist nicht verfügbar
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TLE42712AKSA1 TLE 4271-2.pdf
TLE42712AKSA1
Hersteller: Infineon Technologies
Description: IC REG LIN 5V 550MA TO220-7-11
Packaging: Bulk
Package / Case: TO-220-7 Formed Leads
Output Type: Fixed
Mounting Type: Through Hole
Current - Output: 550mA
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 6 µA
Voltage - Input (Max): 40V
Number of Regulators: 1
Supplier Device Package: P-TO220-7-11
Voltage - Output (Min/Fixed): 5V
Control Features: Reset, Watchdog
Part Status: Obsolete
PSRR: 54dB (100Hz)
Voltage Dropout (Max): 0.7V @ 550mA
Protection Features: Over Current, Over Temperature, Over Voltage, Reverse Polarity, Short Circuit
Current - Supply (Max): 90 mA
auf Bestellung 34338 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
205+2.45 EUR
Mindestbestellmenge: 205
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SPD08N50C3 Infineon-SPD08N50C3-DS-v02_06-en.pdf?fileId=db3a30433f1b26e8013f1ea5b45f0334
SPD08N50C3
Hersteller: Infineon Technologies
Description: COOLMOS, 7.6A, 500V, 0.6OHM, N-C
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.6A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 4.6A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 350µA
Supplier Device Package: PG-TO252-3-313
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 750 pF @ 25 V
Produkt ist nicht verfügbar
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PMB3543E6327XQSA1
Hersteller: Infineon Technologies
Description: TELECOM IC
Packaging: Bulk
auf Bestellung 119 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
7+78.98 EUR
Mindestbestellmenge: 7
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FS3L200R10W3S7FB11BPSA1 Infineon-FS3L200R10W3S7F_B11-DataSheet-v03_00-EN.pdf?fileId=5546d46271bf4f920172079cc70479ac
FS3L200R10W3S7FB11BPSA1
Hersteller: Infineon Technologies
Description: IGBT MODULE LOW POWER EASY
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Level Inverter
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.55V @ 15V, 25A
NTC Thermistor: Yes
Supplier Device Package: AG-EASY3B
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 70 A
Voltage - Collector Emitter Breakdown (Max): 950 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 31 µA
Input Capacitance (Cies) @ Vce: 6.48 nF @ 25 V
auf Bestellung 19 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+258.24 EUR
16+231.12 EUR
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F3L400R10W3S7FB11BPSA1 Infineon-F3L400R10W3S7F_B11-DataSheet-v03_00-EN.pdf?fileId=5546d46271bf4f920172078a6a58799d
F3L400R10W3S7FB11BPSA1
Hersteller: Infineon Technologies
Description: IGBT MODULE LOW POWER EASY
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Level Inverter
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 150A
NTC Thermistor: Yes
Supplier Device Package: AG-EASY3B
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 220 A
Voltage - Collector Emitter Breakdown (Max): 950 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 71 µA
Input Capacitance (Cies) @ Vce: 49.2 nF @ 25 V
auf Bestellung 4 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+319.25 EUR
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EVAL2ED020I12F2TOBO1 Infineon-EVAL_2ED020I12-F2-ApplicationNotes-v01_00-EN.pdf?fileId=db3a304340155f3d014029a78ed602f3
EVAL2ED020I12F2TOBO1
Hersteller: Infineon Technologies
Description: EVAL BOARD FOR 2ED020I12-F2
Packaging: Bulk
Function: Gate Driver
Type: Power Management
Utilized IC / Part: 2ED020I12-F2
Supplied Contents: Board(s)
Part Status: Active
Contents: Board(s)
auf Bestellung 4 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+157.7 EUR
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KITAURIXTC275ARDSBTOBO1 Infineon-ShieldBuddy_TC275%20-UM-v02_08-EN.pdf?fileId=5546d46269e1c019016a54f0801a5590
KITAURIXTC275ARDSBTOBO1
Hersteller: Infineon Technologies
Description: SHIELDBUDDYTC275-AURIX
Packaging: Box
Mounting Type: Fixed
Type: MCU 32-Bit
Contents: Board(s), LCD
Core Processor: TriCore™
Utilized IC / Part: TC275
Platform: AURIX
auf Bestellung 145 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+298.55 EUR
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PTFA181001FV4R250FTMA1 PTFA181001%28E%2CF%29.pdf
PTFA181001FV4R250FTMA1
Hersteller: Infineon Technologies
Description: RF MOSFET LDMOS 28V H-37248-2
Packaging: Tape & Reel (TR)
Package / Case: 2-Flatpack, Fin Leads, Flanged
Current Rating (Amps): 1µA
Mounting Type: Surface Mount
Frequency: 1.88GHz
Power - Output: 100W
Gain: 16.5dB
Technology: LDMOS
Supplier Device Package: H-37248-2
Voltage - Rated: 65 V
Voltage - Test: 28 V
Current - Test: 750 mA
Produkt ist nicht verfügbar
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IRLR3636TRLPBF IRSDS10828-1.pdf?t.download=true&u=5oefqw
IRLR3636TRLPBF
Hersteller: Infineon Technologies
Description: MOSFET N-CH 60V 50A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 6.8mOhm @ 50A, 10V
Power Dissipation (Max): 143W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 100µA
Supplier Device Package: TO-252AA (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 3779 pF @ 50 V
auf Bestellung 583 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5+3.94 EUR
10+2.54 EUR
100+1.74 EUR
500+1.4 EUR
Mindestbestellmenge: 5
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IRFR3504ZTR IRFR3504Z%2C%20IRFU3504Z.pdf
IRFR3504ZTR
Hersteller: Infineon Technologies
Description: MOSFET N-CH 40V 42A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 42A, 10V
Power Dissipation (Max): 90W (Tc)
Vgs(th) (Max) @ Id: 4V @ 50µA
Supplier Device Package: TO-252AA (DPAK)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1510 pF @ 25 V
Produkt ist nicht verfügbar
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IRFR3504ZTRL IRFR3504Z%2C%20IRFU3504Z.pdf
IRFR3504ZTRL
Hersteller: Infineon Technologies
Description: MOSFET N-CH 40V 42A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 42A, 10V
Power Dissipation (Max): 90W (Tc)
Vgs(th) (Max) @ Id: 4V @ 50µA
Supplier Device Package: TO-252AA (DPAK)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1510 pF @ 25 V
Produkt ist nicht verfügbar
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IRFR3504ZTRR IRFR3504Z,%20IRFU3504Z.pdf
IRFR3504ZTRR
Hersteller: Infineon Technologies
Description: MOSFET N-CH 40V 42A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 42A, 10V
Power Dissipation (Max): 90W (Tc)
Vgs(th) (Max) @ Id: 4V @ 50µA
Supplier Device Package: D-Pak
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1510 pF @ 25 V
Produkt ist nicht verfügbar
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64-4059PBF irfr3504zpbf.pdf?fileId=5546d462533600a4015356311d09209b
64-4059PBF
Hersteller: Infineon Technologies
Description: MOSFET N-CH 40V 42A DPAK
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 42A, 10V
Power Dissipation (Max): 90W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1510 pF @ 25 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRFR3504ZTRLPBF irfr3504zpbf.pdf?fileId=5546d462533600a4015356311d09209b
IRFR3504ZTRLPBF
Hersteller: Infineon Technologies
Description: MOSFET N-CH 40V 42A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 42A, 10V
Power Dissipation (Max): 90W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1510 pF @ 25 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRFR3504ZTRRPBF irfr3504zpbf.pdf?fileId=5546d462533600a4015356311d09209b
IRFR3504ZTRRPBF
Hersteller: Infineon Technologies
Description: MOSFET N-CH 40V 42A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 42A, 10V
Power Dissipation (Max): 90W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1510 pF @ 25 V
Produkt ist nicht verfügbar
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BCR169WE6327 INFNS11715-1.pdf?t.download=true&u=5oefqw
BCR169WE6327
Hersteller: Infineon Technologies
Description: TRANS PREBIAS PNP 50V SOT323-3
Packaging: Bulk
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 5mA, 5V
Supplier Device Package: PG-SOT323-3-1
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 250 mW
Frequency - Transition: 200 MHz
Resistor - Base (R1): 4.7 kOhms
Grade: Automotive
Qualification: AEC-Q101
Resistors Included: R1 Only
auf Bestellung 36000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
8955+0.045 EUR
Mindestbestellmenge: 8955
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TLF50281ELXUMA1 Infineon-TLF50281EL-DS-v01_01-EN.pdf?fileId=5546d46258fc0bc1015969d2c73f41f2
TLF50281ELXUMA1
Hersteller: Infineon Technologies
Description: IC REG BUCK 5V 500MA PGSSOP14
Packaging: Bulk
Package / Case: 14-LSSOP (0.154", 3.90mm Width) Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 500mA
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Frequency - Switching: 2.2MHz
Voltage - Input (Max): 45V
Topology: Buck
Supplier Device Package: PG-SSOP-14-EP
Synchronous Rectifier: No
Voltage - Input (Min): 4.75V
Voltage - Output (Min/Fixed): 5V
Part Status: Obsolete
Grade: Automotive
Qualification: AEC-Q100
auf Bestellung 1034 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
247+1.98 EUR
Mindestbestellmenge: 247
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IPD30N06S3-24 INFNS11065-1.pdf?t.download=true&u=5oefqw
IPD30N06S3-24
Hersteller: Infineon Technologies
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A
Supplier Device Package: PG-TO252-3-11
Part Status: Active
Drain to Source Voltage (Vdss): 55 V
Produkt ist nicht verfügbar
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IPD230N06LG INFNS15837-1.pdf?t.download=true&u=5oefqw
IPD230N06LG
Hersteller: Infineon Technologies
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 23mOhm @ 30A, 10V
Vgs(th) (Max) @ Id: 2V @ 49µA
Supplier Device Package: PG-TO252-3
Part Status: Active
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 30 V
Produkt ist nicht verfügbar
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IPB230N06L3G INFNS19526-1.pdf?t.download=true&u=5oefqw
IPB230N06L3G
Hersteller: Infineon Technologies
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 23mOhm @ 30A, 10V
Power Dissipation (Max): 36W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 11µA
Supplier Device Package: PG-TO263-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 30 V
Produkt ist nicht verfügbar
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IPP230N06L3GXKSA1 INFNS19526-1.pdf?t.download=true&u=5oefqw
IPP230N06L3GXKSA1
Hersteller: Infineon Technologies
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A
Rds On (Max) @ Id, Vgs: 23mOhm @ 30A, 10V
Power Dissipation (Max): 36W
Vgs(th) (Max) @ Id: 2.2V @ 11µA
Supplier Device Package: PG-TO220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 30 V
auf Bestellung 1500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
567+0.81 EUR
Mindestbestellmenge: 567
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IPP230N06L3G INFNS19526-1.pdf?t.download=true&u=5oefqw
IPP230N06L3G
Hersteller: Infineon Technologies
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 23mOhm @ 30A, 10V
Power Dissipation (Max): 36W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 11µA
Supplier Device Package: PG-TO220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 30 V
auf Bestellung 9620 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
472+0.97 EUR
Mindestbestellmenge: 472
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BGA420H6433XTMA1 bga420.pdf?folderId=db3a30431441fb5d0114b654e6581730&fileId=db3a304314dca3890115418cec781637
BGA420H6433XTMA1
Hersteller: Infineon Technologies
Description: IC RF AMP GPS 0HZ-3GHZ SOT343-3D
Packaging: Bulk
Package / Case: SC-82A, SOT-343
Mounting Type: Surface Mount
Frequency: 0Hz ~ 3GHz
RF Type: General Purpose
Voltage - Supply: 3V ~ 6V
Gain: 13dB
Current - Supply: 6.7mA
Noise Figure: 2.3dB
P1dB: -2.5dBm
Test Frequency: 1GHz
Supplier Device Package: PG-SOT343-3D
Part Status: Obsolete
auf Bestellung 119220 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
491+0.92 EUR
Mindestbestellmenge: 491
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ICE3RBR0665JZXKLA1 INFNS27653-1.pdf?t.download=true&u=5oefqw
ICE3RBR0665JZXKLA1
Hersteller: Infineon Technologies
Description: IC OFFLINE SWITCH FLYBACK 7DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm), 7 Leads
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Duty Cycle: 75%
Frequency - Switching: 65kHz
Internal Switch(s): Yes
Voltage - Breakdown: 650V
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 10.5V ~ 25V
Supplier Device Package: PG-DIP-7-1
Fault Protection: Over Load, Over Temperature, Over Voltage
Voltage - Start Up: 18 V
Part Status: Active
Power (Watts): 71 W
auf Bestellung 3886 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5+3.61 EUR
10+2.67 EUR
50+2.3 EUR
100+2.18 EUR
250+2.06 EUR
500+1.99 EUR
1000+1.93 EUR
2500+1.86 EUR
Mindestbestellmenge: 5
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ICE3RBR0665JGXUMA1 Infineon-ICE3RBR0665JG-DS-v01_00-EN.pdf?fileId=5546d46253f6505701549aaf5c8c7514
ICE3RBR0665JGXUMA1
Hersteller: Infineon Technologies
Description: IC OFFLINE SWITCH FLYBACK 12DSO
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.154", 3.90mm Width), 12 Leads
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Duty Cycle: 75%
Frequency - Switching: 65kHz
Internal Switch(s): Yes
Voltage - Breakdown: 650V
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 10.5V ~ 25V
Supplier Device Package: PG-DSO-12-19
Fault Protection: Over Load, Over Temperature, Over Voltage
Voltage - Start Up: 18 V
Part Status: Active
Power (Watts): 66 W
Produkt ist nicht verfügbar
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ICE3RBR0665JGXUMA1 Infineon-ICE3RBR0665JG-DS-v01_00-EN.pdf?fileId=5546d46253f6505701549aaf5c8c7514
ICE3RBR0665JGXUMA1
Hersteller: Infineon Technologies
Description: IC OFFLINE SWITCH FLYBACK 12DSO
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.154", 3.90mm Width), 12 Leads
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Duty Cycle: 75%
Frequency - Switching: 65kHz
Internal Switch(s): Yes
Voltage - Breakdown: 650V
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 10.5V ~ 25V
Supplier Device Package: PG-DSO-12-19
Fault Protection: Over Load, Over Temperature, Over Voltage
Voltage - Start Up: 18 V
Part Status: Active
Power (Watts): 66 W
auf Bestellung 2474 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5+3.68 EUR
10+2.74 EUR
25+2.5 EUR
100+2.24 EUR
250+2.12 EUR
500+2.04 EUR
1000+1.98 EUR
Mindestbestellmenge: 5
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FP15R06YE3B4BOMA1
Hersteller: Infineon Technologies
Description: MOD IGBT LOW PWR EASY2-1
Produkt ist nicht verfügbar
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FZ2000R33HE4BOSA1 Infineon-FZ2000R33HE4-DataSheet-v02_01-EN.pdf?fileId=5546d4626eab8fbf016ed15a9df22af8
FZ2000R33HE4BOSA1
Hersteller: Infineon Technologies
Description: IGBT MOD 3300V 2000A AGIHVB190-3
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single Switch
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 2kA (Typ)
NTC Thermistor: No
Supplier Device Package: AG-IHVB190-3
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 2000 A
Voltage - Collector Emitter Breakdown (Max): 3300 V
Power - Max: 4200 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 280 nF @ 25 V
Produkt ist nicht verfügbar
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IPU50R950CE INFN-S-A0002263195-1.pdf?t.download=true&u=5oefqw
IPU50R950CE
Hersteller: Infineon Technologies
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.6A (Tc)
Rds On (Max) @ Id, Vgs: 950mOhm @ 1.2A, 13V
Power Dissipation (Max): 53W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 100µA
Supplier Device Package: PG-TO251-3
Drive Voltage (Max Rds On, Min Rds On): 13V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 10.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 231 pF @ 100 V
auf Bestellung 235740 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1731+0.28 EUR
Mindestbestellmenge: 1731
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IPU50R950CEBTMA1 INFN-S-A0001301404-1.pdf?t.download=true&u=5oefqw
IPU50R950CEBTMA1
Hersteller: Infineon Technologies
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.3A (Tc)
Rds On (Max) @ Id, Vgs: 950mOhm @ 1.2A, 13V
Power Dissipation (Max): 34W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 100µA
Supplier Device Package: PG-TO251-3-345
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 13V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 10.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 231 pF @ 100 V
auf Bestellung 4380 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1731+0.28 EUR
Mindestbestellmenge: 1731
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DHS1011AUMA1
DHS1011AUMA1
Hersteller: Infineon Technologies
Description: DSO-12-13
Packaging: Bulk
Produkt ist nicht verfügbar
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BCW68GE6327 INFNS11571-1.pdf?t.download=true&u=5oefqw
BCW68GE6327
Hersteller: Infineon Technologies
Description: SMALL SIGNAL BIPOLAR TRANSISTOR
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 20nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 100mA, 1V
Frequency - Transition: 200MHz
Supplier Device Package: PG-SOT23-3-1
Part Status: Active
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 330 mW
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CYUSB3014-FBXCT download
CYUSB3014-FBXCT
Hersteller: Infineon Technologies
Description: IC USB CTLR
Packaging: Tape & Reel (TR)
Package / Case: 131-UFBGA, WLCSP
Mounting Type: Surface Mount
Interface: GPIF, I2C, I2S, SPI, UART, USB
RAM Size: 512K x 8
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 1.15V ~ 1.25V
Controller Series: CYUSB
Program Memory Type: External Program Memory
Applications: SuperSpeed USB Peripheral Controller
Core Processor: ARM9®
Supplier Device Package: 131-WLCSP (5.1x4.7)
Part Status: Obsolete
Number of I/O: 60
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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IRGB30B60KPBF-INF
Hersteller: Infineon Technologies
Description: IGBT, 75A I(C), 600V V(BR)CES, N
Produkt ist nicht verfügbar
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IRGB15B60KDPBF-INF IRSDS10534-1.pdf?t.download=true&u=5oefqw
IRGB15B60KDPBF-INF
Hersteller: Infineon Technologies
Description: IGBT NPT 600V 31A TO-220AB
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 92 ns
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 15A
Supplier Device Package: TO-220AB
IGBT Type: NPT
Td (on/off) @ 25°C: 34ns/184ns
Switching Energy: 220µJ (on), 340µJ (off)
Test Condition: 400V, 15A, 22Ohm, 15V
Gate Charge: 84 nC
Part Status: Active
Current - Collector (Ic) (Max): 31 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 62 A
Power - Max: 208 W
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IRGB4B60KPBF Part_Number_Guide_Web.pdf
IRGB4B60KPBF
Hersteller: Infineon Technologies
Description: IGBT 600V 12A 63W TO220A
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 4A
Supplier Device Package: TO-220AB
IGBT Type: NPT
Td (on/off) @ 25°C: 22ns/100ns
Switching Energy: 130µJ (on), 83µJ (off)
Test Condition: 400V, 4A, 100Ohm, 15V
Gate Charge: 12 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 12 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 24 A
Power - Max: 63 W
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CY96F673ABPMC1-GS109UJE2 download
CY96F673ABPMC1-GS109UJE2
Hersteller: Infineon Technologies
Description: IC MCU 16BIT 96KB FLASH 64LQFP
Produkt ist nicht verfügbar
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CY96F693ABPMC-GS109-UJE2 Infineon-CY96690_Series_F2MC-16FX_16-bit_Proprietary_Microcontroller-AdditionalTechnicalInformation-v05_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0edd4ab561a3&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all
CY96F693ABPMC-GS109-UJE2
Hersteller: Infineon Technologies
Description: IC MCU 16BIT 96KB FLASH 100LQFP
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CYW20706UA1KFFB1GT download
CYW20706UA1KFFB1GT
Hersteller: Infineon Technologies
Description: IC RF TXRX+MCU BLE 49FCBGA
Packaging: Tape & Reel (TR)
Package / Case: 49-VFBGA, FCBGA
Sensitivity: -96.5dBm
Mounting Type: Surface Mount
Frequency: 2.4GHz
Memory Size: 848kB ROM, 352kB RAM
Type: TxRx + MCU
Operating Temperature: -30°C ~ 85°C
Voltage - Supply: 3.3V
Power - Output: 12dBm
Protocol: Bluetooth v4.2
Current - Receiving: 12.5mA
Data Rate (Max): 2Mbps
Current - Transmitting: 26.5mA
Supplier Device Package: 49-FCBGA (4.5x4)
GPIO: 7
RF Family/Standard: Bluetooth
Serial Interfaces: I2C, I2S, SPI, UART
DigiKey Programmable: Not Verified
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CYW20706UA1KFFB1G download
CYW20706UA1KFFB1G
Hersteller: Infineon Technologies
Description: IC RF TXRX+MCU BLE 49FCBGA
Packaging: Tray
Package / Case: 49-VFBGA, FCBGA
Sensitivity: -96.5dBm
Mounting Type: Surface Mount
Frequency: 2.4GHz
Memory Size: 848kB ROM, 352kB RAM
Type: TxRx + MCU
Operating Temperature: -30°C ~ 85°C
Voltage - Supply: 3.3V
Power - Output: 12dBm
Protocol: Bluetooth v4.2
Current - Receiving: 12.5mA
Data Rate (Max): 2Mbps
Current - Transmitting: 26.5mA
Supplier Device Package: 49-FCBGA (4.5x4)
GPIO: 7
RF Family/Standard: Bluetooth
Serial Interfaces: I2C, I2S, SPI, UART
Part Status: Active
DigiKey Programmable: Not Verified
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CYW20706UA1KFFB1GT download
CYW20706UA1KFFB1GT
Hersteller: Infineon Technologies
Description: IC RF TXRX+MCU BLE 49FCBGA
Packaging: Tape & Reel (TR)
Package / Case: 49-VFBGA, FCBGA
Sensitivity: -96.5dBm
Mounting Type: Surface Mount
Frequency: 2.4GHz
Memory Size: 848kB ROM, 352kB RAM
Type: TxRx + MCU
Operating Temperature: -30°C ~ 85°C
Voltage - Supply: 3.3V
Power - Output: 12dBm
Protocol: Bluetooth v4.2
Current - Receiving: 12.5mA
Data Rate (Max): 2Mbps
Current - Transmitting: 26.5mA
Supplier Device Package: 49-FCBGA (4.5x4)
GPIO: 7
RF Family/Standard: Bluetooth
Serial Interfaces: I2C, I2S, SPI, UART
DigiKey Programmable: Not Verified
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CYW20706UA1KFFB4G download
CYW20706UA1KFFB4G
Hersteller: Infineon Technologies
Description: IC RF TXRX+MCU BLE 49FCBGA
Packaging: Tray
Package / Case: 49-VFBGA, FCBGA
Sensitivity: -96.5dBm
Mounting Type: Surface Mount
Frequency: 2.4GHz
Memory Size: 848kB ROM, 352kB RAM
Type: TxRx + MCU
Operating Temperature: -30°C ~ 85°C
Voltage - Supply: 3.3V
Power - Output: 12dBm
Protocol: Bluetooth v4.2
Current - Receiving: 12.5mA
Data Rate (Max): 2Mbps
Current - Transmitting: 26.5mA
Supplier Device Package: 49-FCBGA (4.5x4)
GPIO: 7
RF Family/Standard: Bluetooth
Serial Interfaces: I2C, I2S, SPI, UART
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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CY7C1327G-166AXC Infineon-CY7C1327G_4-Mbit_(256_K_18)_Pipelined_Sync_SRAM-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec41d4b3988
CY7C1327G-166AXC
Hersteller: Infineon Technologies
Description: IC SRAM 4.5MBIT PAR 100TQFP
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Memory Size: 4.5Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 3.15V ~ 3.6V
Technology: SRAM - Synchronous, SDR
Clock Frequency: 166 MHz
Memory Format: SRAM
Supplier Device Package: 100-TQFP (14x20)
Memory Interface: Parallel
Access Time: 3.5 ns
Memory Organization: 256K x 18
DigiKey Programmable: Not Verified
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IMW65R072M1HXKSA1 Infineon-IMW65R072M1H-DataSheet-v02_00-EN.pdf?fileId=5546d4626f229553016f85c9c62a0482
IMW65R072M1HXKSA1
Hersteller: Infineon Technologies
Description: MOSFET 650V NCH SIC TRENCH
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
Rds On (Max) @ Id, Vgs: 94mOhm @ 13.3A, 18V
Power Dissipation (Max): 96W (Tc)
Vgs(th) (Max) @ Id: 5.7V @ 4mA
Supplier Device Package: PG-TO247-3-41
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +23V, -5V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 744 pF @ 400 V
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30+6.33 EUR
120+5.31 EUR
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BSP78E6327
BSP78E6327
Hersteller: Infineon Technologies
Description: POWER SWITCH SMART LOW
Packaging: Bulk
Part Status: Active
Produkt ist nicht verfügbar
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BTS141NKSA1 INFNS27674-1.pdf?t.download=true&u=5oefqw
BTS141NKSA1
Hersteller: Infineon Technologies
Description: BUFFER/INVERTER PERIPHL DRIVER
Packaging: Bulk
Features: Auto Restart, Slew Rate Controlled
Package / Case: TO-220-3
Output Type: N-Channel
Mounting Type: Through Hole
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Low Side
Rds On (Typ): 25mOhm
Input Type: Non-Inverting
Voltage - Load: 60V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 12A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-TO220-3-1
Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage, Short Circuit
Part Status: Active
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BTS141E3045ANTMA1 INFNS27674-1.pdf?t.download=true&u=5oefqw
Hersteller: Infineon Technologies
Description: BUFFER/INVERTER PERIPHL DRIVER
Packaging: Bulk
Features: Auto Restart, Slew Rate Controlled
Package / Case: TO-220-3
Output Type: N-Channel
Mounting Type: Through Hole
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Low Side
Rds On (Typ): 25mOhm
Input Type: Non-Inverting
Voltage - Load: 60V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 12A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-TO220-3
Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage, Short Circuit
Part Status: Active
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Anzahl Preis
118+3.88 EUR
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