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TLE4275D TLE4275D Infineon Technologies Infineon-TLE4275V33-DS-v01_20-EN.pdf?fileId=5546d46258fc0bc101595f8ea6971fb1 Description: IC REG LIN 5V 450MA TO252-5-11
Packaging: Bulk
Package / Case: TO-252-5, DPak (4 Leads + Tab), TO-252AD
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 450mA
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 220 µA
Voltage - Input (Max): 42V
Number of Regulators: 1
Supplier Device Package: PG-TO252-5-11
Voltage - Output (Min/Fixed): 5V
Control Features: Reset
Part Status: Active
PSRR: 60dB (100Hz)
Voltage Dropout (Max): 0.5V @ 300mA
Protection Features: Over Current, Over Temperature, Reverse Polarity, Short Circuit
Current - Supply (Max): 22 mA
Produkt ist nicht verfügbar
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IRF3709STRLPBF-INF IRF3709STRLPBF-INF Infineon Technologies IRSDS10219-1.pdf?t.download=true&u=5oefqw Description: HEXFET SMPS POWER MOSFET
Packaging: Bulk
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 15A, 10V
Power Dissipation (Max): 3.1W (Ta), 120W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 2672 pF @ 16 V
Produkt ist nicht verfügbar
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BC856S E6433 BC856S E6433 Infineon Technologies INFNS16381-1.pdf?t.download=true&u=5oefqw Description: BIPOLAR GEN PURPOSE TRANSISTOR
Packaging: Bulk
Package / Case: 6-VSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 PNP (Dual)
Operating Temperature: 150°C (TJ)
Power - Max: 250mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 65V
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
Frequency - Transition: 250MHz
Supplier Device Package: SOT-363
Part Status: Active
Produkt ist nicht verfügbar
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BC856S E6327 Infineon Technologies INFNS16381-1.pdf?t.download=true&u=5oefqw Description: BIPOLAR GEN PURPOSE TRANSISTOR
Packaging: Bulk
Package / Case: 6-VSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 PNP (Dual)
Operating Temperature: 150°C (TJ)
Power - Max: 250mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 65V
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
Frequency - Transition: 250MHz
Supplier Device Package: SOT-363
Part Status: Active
Produkt ist nicht verfügbar
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IRF7811AVTRPBF-1 IRF7811AVTRPBF-1 Infineon Technologies IRF7811AVPbF-1_11-20-13.pdf Description: MOSFET N-CH 30V 10.8A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10.8A (Ta)
Rds On (Max) @ Id, Vgs: 14mOhm @ 15A, 4.5V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SO
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1801 pF @ 10 V
Produkt ist nicht verfügbar
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IRLML2803TRPBF-1 Infineon Technologies IRLML2803PbF-1_10-28-14.pdf Description: MOSFET N-CH 30V 1.2A SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.2A (Ta)
Rds On (Max) @ Id, Vgs: 250mOhm @ 910mA, 10V
Power Dissipation (Max): 540mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: Micro3™/SOT-23
Part Status: Obsolete
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 85 pF @ 25 V
Produkt ist nicht verfügbar
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BSC090N03MSGXT BSC090N03MSGXT Infineon Technologies INFNS27233-1.pdf?t.download=true&u=5oefqw Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 48A (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 30A, 10V
Power Dissipation (Max): 2.5W (Ta), 32W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TDSON-8-5
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 15 V
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FS200R12KT4RPBPSA1 FS200R12KT4RPBPSA1 Infineon Technologies INFNS28545-1.pdf?t.download=true&u=5oefqw Description: IGBT MODULE
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IRF7455TRPBF-1 IRF7455TRPBF-1 Infineon Technologies IRF7455PbF-1_11-20-13.pdf Description: MOSFET N-CH 30V 15A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Ta)
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 15A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 2.8V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 3480 pF @ 25 V
Produkt ist nicht verfügbar
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BCX70GE6327 BCX70GE6327 Infineon Technologies INFNS11039-1.pdf?t.download=true&u=5oefqw Description: TRANS NPN 45V 0.1A SOT23
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 550mV @ 1.25mA, 50mA
Current - Collector Cutoff (Max): 20nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 5V
Frequency - Transition: 250MHz
Supplier Device Package: PG-SOT23
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 330 mW
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BCX 70J E6327 BCX 70J E6327 Infineon Technologies INFNS11039-1.pdf?t.download=true&u=5oefqw Description: TRANS NPN 45V 0.1A SOT23
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BCX70JE6327 BCX70JE6327 Infineon Technologies INFNS11039-1.pdf?t.download=true&u=5oefqw Description: TRANS NPN 45V 0.1A SOT23
auf Bestellung 22700 Stücke:
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BCX 70H E6327 BCX 70H E6327 Infineon Technologies INFNS11039-1.pdf?t.download=true&u=5oefqw Description: TRANS NPN 45V 0.1A SOT23
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BCX70JE6433 BCX70JE6433 Infineon Technologies INFNS11039-1.pdf?t.download=true&u=5oefqw Description: TRANS NPN 45V 0.1A SOT23
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 550mV @ 1.25mA, 50mA
Current - Collector Cutoff (Max): 20nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 2mA, 5V
Frequency - Transition: 250MHz
Supplier Device Package: PG-SOT23
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 330 mW
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BCX70HE6327 BCX70HE6327 Infineon Technologies INFNS11039-1.pdf?t.download=true&u=5oefqw Description: TRANS NPN 45V 0.1A SOT23
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 550mV @ 1.25mA, 50mA
Current - Collector Cutoff (Max): 20nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 2mA, 5V
Frequency - Transition: 250MHz
Supplier Device Package: PG-SOT23
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 330 mW
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IPB60R170CFD7ATMA1 IPB60R170CFD7ATMA1 Infineon Technologies Infineon-IPB60R170CFD7-DataSheet-v02_00-EN.pdf?fileId=5546d4626b2d8e69016bb297b1bd19ca Description: MOSFET N-CH 600V 14A TO263-3-2
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Rds On (Max) @ Id, Vgs: 170mOhm @ 6A, 10V
Power Dissipation (Max): 75W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 300µA
Supplier Device Package: PG-TO263-3-2
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1190 pF @ 400 V
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IPB60R145CFD7ATMA1 IPB60R145CFD7ATMA1 Infineon Technologies Infineon-IPB60R145CFD7-DataSheet-v02_00-EN.pdf?fileId=5546d4626b2d8e69016bb2979db419c7 Description: MOSFET N-CH 600V 16A TO263-3-2
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Rds On (Max) @ Id, Vgs: 145mOhm @ 6.8A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 340µA
Supplier Device Package: PG-TO263-3-2
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1330 pF @ 400 V
Produkt ist nicht verfügbar
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IPB60R125CFD7ATMA1 IPB60R125CFD7ATMA1 Infineon Technologies Infineon-IPB60R125CFD7-DataSheet-v02_00-EN.pdf?fileId=5546d4626b2d8e69016bb28e6de719c4 Description: MOSFET N-CH 600V 18A TO263-3
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 125mOhm @ 7.8A, 10V
Power Dissipation (Max): 92W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 390µA
Supplier Device Package: PG-TO263-3-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1503 pF @ 400 V
Produkt ist nicht verfügbar
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IPB60R105CFD7ATMA1 IPB60R105CFD7ATMA1 Infineon Technologies Infineon-IPB60R105CFD7-DataSheet-v02_00-EN.pdf?fileId=5546d4626b2d8e69016bb24e552a198a Description: MOSFET N-CH 600V 21A TO263-3
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
Rds On (Max) @ Id, Vgs: 105mOhm @ 9.3A, 10V
Power Dissipation (Max): 106W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 470µA
Supplier Device Package: PG-TO263-3-2
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1752 pF @ 400 V
Produkt ist nicht verfügbar
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BSP299L6327 Infineon Technologies Description: SMALL-SIGNAL N-CHANNEL MOSFET
Packaging: Bulk
Produkt ist nicht verfügbar
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BUZ101SL BUZ101SL Infineon Technologies INFNS23686-1.pdf?t.download=true&u=5oefqw Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 40mOhm @ 14A, 10V
Power Dissipation (Max): 55W (Tc)
Vgs(th) (Max) @ Id: 2V @ 40µA
Supplier Device Package: PG-TO220-3-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±14V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 25 V
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BUZ101L BUZ101L Infineon Technologies INFNS01258-1.pdf?t.download=true&u=5oefqw Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
auf Bestellung 5075 Stücke:
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709+0.64 EUR
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BUZ102SL BUZ102SL Infineon Technologies INFNS23684-1.pdf?t.download=true&u=5oefqw Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 47A (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 33A, 10V
Power Dissipation (Max): 120W (Tc)
Vgs(th) (Max) @ Id: 2V @ 90µA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±14V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1730 pF @ 25 V
Produkt ist nicht verfügbar
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BUZ102SL-E3045A BUZ102SL-E3045A Infineon Technologies INFNS23684-1.pdf?t.download=true&u=5oefqw Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 47A (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 33A, 10V
Power Dissipation (Max): 120W (Tc)
Vgs(th) (Max) @ Id: 2V @ 90µA
Supplier Device Package: PG-TO263-3-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±14V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1730 pF @ 25 V
Produkt ist nicht verfügbar
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BUZ100S-E3045A BUZ100S-E3045A Infineon Technologies INFNS23689-1.pdf?t.download=true&u=5oefqw Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
auf Bestellung 28500 Stücke:
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BUZ100S BUZ100S Infineon Technologies INFNS23689-1.pdf?t.download=true&u=5oefqw Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 77A (Tc)
Rds On (Max) @ Id, Vgs: 15mOhm @ 55A, 10V
Power Dissipation (Max): 170W (Tc)
Vgs(th) (Max) @ Id: 4V @ 130µA
Supplier Device Package: PG-TO220-3-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2375 pF @ 25 V
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SPA06N60C3IN SPA06N60C3IN Infineon Technologies Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Part Status: Active
Produkt ist nicht verfügbar
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SPP06N60C3 SPP06N60C3 Infineon Technologies Infineon-SPP06N60C3-DS-v01_04-en.pdf?fileId=db3a304412b407950112b42e2a60496d Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.2A (Tc)
Rds On (Max) @ Id, Vgs: 750mOhm @ 3.9A, 10V
Power Dissipation (Max): 74W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 260µA
Supplier Device Package: PG-TO220-3-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 620 pF @ 25 V
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KTY11-5 KTY11-5 Infineon Technologies KT%2CKTY.pdf Description: SENSOR PTC 1.97KOHM 3% TO92MINI
Packaging: Bulk
Package / Case: TO-226-2, TO-92-2 (TO-226AC)
Mounting Type: Through Hole
Operating Temperature: -50°C ~ 150°C
Resistance Tolerance: ±3%
Supplier Device Package: TO-92MINI
Resistance @ 25°C: 1.97 kOhms
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KTY10-7 KTY10-7 Infineon Technologies INFNS04262-1.pdf?t.download=true&u=5oefqw Description: SENSOR PTC 2.03KOHM 3% TO92
Packaging: Bulk
Package / Case: TO-226-2, TO-92-2 (TO-226AC)
Mounting Type: Through Hole
Operating Temperature: -50°C ~ 150°C
Resistance Tolerance: ±3%
Supplier Device Package: TO-92
Part Status: Active
Resistance @ 25°C: 2.03 kOhms
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KTY10-5 Infineon Technologies INFNS01010-1.pdf?t.download=true&u=5oefqw Description: SENSOR PTC 1.97KOHM 1% TO92
Packaging: Bulk
Package / Case: TO-226-2, TO-92-2 (TO-226AC)
Mounting Type: Through Hole
Operating Temperature: -50°C ~ 150°C
Resistance Tolerance: ±1%
Supplier Device Package: TO-92
Part Status: Active
Resistance @ 25°C: 1.97 kOhms
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IRF3315PBF IRF3315PBF Infineon Technologies irf3315pbf.pdf?fileId=5546d462533600a4015355df13d21915 Description: MOSFET N-CH 150V 23A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 23A (Tc)
Rds On (Max) @ Id, Vgs: 70mOhm @ 12A, 10V
Power Dissipation (Max): 94W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 25 V
Produkt ist nicht verfügbar
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IR21064SPBF-INF IR21064SPBF-INF Infineon Technologies Description: HALF-BRIDGE BASED MOSFET DRIVER
Packaging: Bulk
Part Status: Active
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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SPU07N60S5IN Infineon Technologies Infineon-SPD_U07N60C3-DS-v02_06-en.pdf?fileId=db3a30431936bc4b0119377a807c3f77 Description: N-CHANNEL POWER MOSFET
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SPI07N60S5IN Infineon Technologies INFNS14202-1.pdf?t.download=true&u=5oefqw Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.3A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 4.6A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 350µA
Supplier Device Package: PG-TO262-3-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 970 pF @ 25 V
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SPB07N60S5 Infineon Technologies Description: N-CHANNEL POWER MOSFET
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SPI07N60S5 SPI07N60S5 Infineon Technologies INFNS14202-1.pdf?t.download=true&u=5oefqw Description: N-CHANNEL POWER MOSFET
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TLE42694GMCT TLE42694GMCT Infineon Technologies TLE42694-DS-v01_41.pdf Description: IC REG LINEAR FIXED LDO REG
Packaging: Bulk
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 150mA
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 300 µA
Voltage - Input (Max): 45V
Number of Regulators: 1
Supplier Device Package: PG-DSO-14
Voltage - Output (Min/Fixed): 5V
Control Features: Delay, Reset
Part Status: Active
PSRR: 70dB (100Hz)
Voltage Dropout (Max): 0.5V @ 100mA
Protection Features: Over Current, Over Temperature, Reverse Polarity
Current - Supply (Max): 8 mA
Grade: Automotive
Qualification: AEC-Q100
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XMC1302Q024X0064ABXUMA1 XMC1302Q024X0064ABXUMA1 Infineon Technologies Description: IC MCU 32BIT 64KB FLASH 24VQFN
Packaging: Cut Tape (CT)
Package / Case: 24-VFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 32MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: A/D 13x12b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V
Connectivity: I2C, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, I2S, POR, PWM, WDT
Supplier Device Package: PG-VQFN-24-19
Part Status: Active
Number of I/O: 18
DigiKey Programmable: Not Verified
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5+3.85 EUR
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100+2.34 EUR
250+2.21 EUR
500+2.14 EUR
1000+2.07 EUR
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IPD04N03LBG IPD04N03LBG Infineon Technologies INFNS11849-1.pdf?t.download=true&u=5oefqw Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 4.1mOhm @ 50A, 10V
Power Dissipation (Max): 115W (Tc)
Vgs(th) (Max) @ Id: 2V @ 70µA
Supplier Device Package: PG-TO252-3-11
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 5200 pF @ 15 V
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IPB04N03LAG IPB04N03LAG Infineon Technologies INFNS08711-1.pdf?t.download=true&u=5oefqw Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 3.9mOhm @ 55A, 10V
Power Dissipation (Max): 107W (Tc)
Vgs(th) (Max) @ Id: 2V @ 60µA
Supplier Device Package: PG-TO263-3-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 3877 pF @ 15 V
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TLE5501E0001XUMA1 TLE5501E0001XUMA1 Infineon Technologies Infineon-Infineon-TLE5501-DS-v01_00--DS-v01_00-EN.pdf?fileId=5546d46264a8de7e0164eca986da1a32 Description: SENSOR ROTARY 360DEG 8DSOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Output: Analog Voltage
Operating Temperature: -40°C ~ 150°C (TA)
Termination Style: Gull Wing
Voltage - Supply: 2.7V ~ 5.5V
Actuator Type: External Magnet, Not Included
Technology: Magnetoresistive
For Measuring: Angle
Supplier Device Package: PG-DSO-8-16
Rotation Angle - Electrical, Mechanical: 0° ~ 360°, Continuous
Output Signal: Cosine, Sine
Grade: Automotive
Qualification: AEC-Q100
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TLE5501E0001XUMA1 TLE5501E0001XUMA1 Infineon Technologies Infineon-Infineon-TLE5501-DS-v01_00--DS-v01_00-EN.pdf?fileId=5546d46264a8de7e0164eca986da1a32 Description: SENSOR ROTARY 360DEG 8DSOP
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Output: Analog Voltage
Operating Temperature: -40°C ~ 150°C (TA)
Termination Style: Gull Wing
Voltage - Supply: 2.7V ~ 5.5V
Actuator Type: External Magnet, Not Included
Technology: Magnetoresistive
For Measuring: Angle
Supplier Device Package: PG-DSO-8-16
Rotation Angle - Electrical, Mechanical: 0° ~ 360°, Continuous
Output Signal: Cosine, Sine
Grade: Automotive
Qualification: AEC-Q100
auf Bestellung 472 Stücke:
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7+2.71 EUR
8+2.4 EUR
10+2.29 EUR
25+2.15 EUR
50+2.06 EUR
100+1.97 EUR
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BAS 40-07 E6327 BAS 40-07 E6327 Infineon Technologies INFNS11688-1.pdf?t.download=true&u=5oefqw Description: RECTIFIER DIODE, SCHOTTKY
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IRG4BC40UPBF-INF Infineon Technologies Description: ULTRAFAST SPEED IGBT
Packaging: Bulk
Part Status: Active
auf Bestellung 64 Stücke:
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64+7 EUR
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BSO080P03NS3GXUMA1 BSO080P03NS3GXUMA1 Infineon Technologies BSO080P03NS3_G_2.2.pdf?folderId=db3a304314dca38901154a72e3951a65&fileId=db3a3043284aacd801286d7aee12296a Description: MOSFET P-CH 30V 12A 8DSO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Ta)
Rds On (Max) @ Id, Vgs: 8mOhm @ 14.8A, 10V
Power Dissipation (Max): 1.6W (Ta)
Vgs(th) (Max) @ Id: 3.1V @ 150µA
Supplier Device Package: PG-DSO-8
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 81 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6750 pF @ 15 V
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IRFS30067PPBF Infineon Technologies IRSDS09929-1.pdf?t.download=true&u=5oefqw Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-263-7, D²Pak (6 Leads + Tab), TO-263CB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 240A (Tc)
Rds On (Max) @ Id, Vgs: 2.1mOhm @ 168A, 10V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK (7-Lead)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 300 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8850 pF @ 50 V
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SIPC69SN60C3X2SA2 Infineon Technologies Description: MOSFET
Packaging: Bulk
Part Status: Active
Produkt ist nicht verfügbar
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TLE6208-6GXUMA2 TLE6208-6GXUMA2 Infineon Technologies Infineon-TLE6208_6G-DS-v01_02-en.pdf?fileId=db3a30431c48a312011c4c052072000c Description: BRUSH DC MOTOR CONTROLLER
Packaging: Bulk
Package / Case: 28-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 600mA
Interface: SPI
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge (6)
Voltage - Supply: 4.75V ~ 5.5V
Applications: General Purpose
Technology: DMOS
Voltage - Load: 5.5V ~ 40V
Supplier Device Package: PG-DSO-28-41
Motor Type - AC, DC: Brushed DC
Part Status: Active
Produkt ist nicht verfügbar
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TLE62086G TLE62086G Infineon Technologies Infineon-TLE6208_6G-DS-v01_02-en.pdf?fileId=db3a30431c48a312011c4c052072000c Description: BRUSH DC MOTOR CONTROLLER
Packaging: Bulk
Package / Case: 28-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 600mA
Interface: SPI
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge (6)
Voltage - Supply: 4.75V ~ 5.5V
Applications: Automotive
Technology: DMOS
Voltage - Load: 5.5V ~ 40V
Supplier Device Package: PG-DSO-28-41
Motor Type - AC, DC: Brushed DC
Part Status: Active
Produkt ist nicht verfügbar
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BC856AE6327 BC856AE6327 Infineon Technologies INFNS12319-1.pdf?t.download=true&u=5oefqw Description: TRANS PNP 65V 0.1A PG-SOT23-3-1
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 125 @ 2mA, 5V
Frequency - Transition: 250MHz
Supplier Device Package: PG-SOT23-3-1
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 65 V
Power - Max: 330 mW
Grade: Automotive
Qualification: AEC-Q101
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BC856A-E6327 BC856A-E6327 Infineon Technologies INFNS12319-1.pdf?t.download=true&u=5oefqw Description: TRANS PNP 65V 0.1A PG-SOT23-3-1
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 125 @ 2mA, 5V
Frequency - Transition: 250MHz
Supplier Device Package: PG-SOT23-3-1
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 65 V
Power - Max: 330 mW
Grade: Automotive
Qualification: AEC-Q101
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8955+0.045 EUR
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IGCM04B60HAXKMA1 IGCM04B60HAXKMA1 Infineon Technologies IGCM04B60HA.pdf Description: IGBT 600V 24MDIP
Packaging: Tube
Package / Case: 24-PowerDIP Module (1.028", 26.10mm)
Mounting Type: Through Hole
Type: IGBT
Configuration: 3 Phase
Voltage - Isolation: 2000Vrms
Part Status: Obsolete
Current: 4 A
Voltage: 600 V
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IGCM04B60GAXKMA1 IGCM04B60GAXKMA1 Infineon Technologies IGCM04B60GA.pdf Description: IGBT 600V 24MDIP
Packaging: Tube
Package / Case: 24-PowerDIP Module (1.028", 26.10mm)
Mounting Type: Through Hole
Type: IGBT
Configuration: 3 Phase
Voltage - Isolation: 2000Vrms
Part Status: Obsolete
Current: 4 A
Voltage: 600 V
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IGCM06F60HAXKMA1 IGCM06F60HAXKMA1 Infineon Technologies IGCM06F60HA.pdf Description: IGBT 600V 24MDIP
Packaging: Tube
Package / Case: 24-PowerDIP Module (1.028", 26.10mm)
Mounting Type: Through Hole
Type: IGBT
Configuration: 3 Phase
Voltage - Isolation: 2000Vrms
Part Status: Obsolete
Current: 6 A
Voltage: 600 V
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IGCM10B60GAXKMA1 Infineon Technologies Description: IGBT 600V 24MDIP
Packaging: Tube
Mounting Type: Through Hole
Part Status: Obsolete
Produkt ist nicht verfügbar
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SAF-TC1165-192F80HLAA SAF-TC1165-192F80HLAA Infineon Technologies Description: RISC FLASH MICROCONTROLLER, 32 B
Packaging: Bulk
Package / Case: 176-LQFP
Mounting Type: Surface Mount
Speed: 80MHz
Program Memory Size: 1.5MB (1.5M x 8)
RAM Size: 100K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
Core Processor: TriCore™
Data Converters: A/D 36x12b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.42V ~ 1.58V
Connectivity: CANbus, SPI, UART/USART
Peripherals: DMA, POR, WDT
Supplier Device Package: PG-LQFP-176-2
Part Status: Active
Number of I/O: 81
DigiKey Programmable: Not Verified
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BC856UE6327HTSA1 BC856UE6327HTSA1 Infineon Technologies bc856s_bc856u_bc857s.pdf?folderId=db3a304314dca389011541d30fa21656&fileId=db3a304314dca38901154200fdcd16ef Description: TRANS 2PNP 65V 100MA PG-SC74-6
Packaging: Bulk
Package / Case: SC-74, SOT-457
Mounting Type: Surface Mount
Transistor Type: 2 PNP (Dual)
Operating Temperature: 150°C (TJ)
Power - Max: 250mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 65V
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
Frequency - Transition: 250MHz
Supplier Device Package: PG-SC74-6
Part Status: Last Time Buy
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IHW20N135R5XKSA IHW20N135R5XKSA Infineon Technologies INFN-S-A0001300633-1.pdf?t.download=true&u=5oefqw Description: REVERSE CONDUCTING IGBT
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.85V @ 15V, 20A
Supplier Device Package: PG-TO247-3-41
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: -/235ns
Switching Energy: 950µJ (off)
Test Condition: 600V, 20A, 10Ohm, 15V
Gate Charge: 170 nC
Part Status: Active
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 1350 V
Current - Collector Pulsed (Icm): 60 A
Power - Max: 288 W
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IHW20N135R3 IHW20N135R3 Infineon Technologies INFN-S-A0004848099-1.pdf?t.download=true&u=5oefqw Description: REVERSE CONDUCTING IGBT W/MONOLT
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 20A
Supplier Device Package: PG-TO247-3-41
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: -/335ns
Switching Energy: -, 1.3mJ (off)
Test Condition: 600V, 20A, 15Ohm, 15V
Gate Charge: 195 nC
Part Status: Active
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 1350 V
Current - Collector Pulsed (Icm): 60 A
Power - Max: 310 W
Produkt ist nicht verfügbar
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TLE4275D Infineon-TLE4275V33-DS-v01_20-EN.pdf?fileId=5546d46258fc0bc101595f8ea6971fb1
TLE4275D
Hersteller: Infineon Technologies
Description: IC REG LIN 5V 450MA TO252-5-11
Packaging: Bulk
Package / Case: TO-252-5, DPak (4 Leads + Tab), TO-252AD
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 450mA
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 220 µA
Voltage - Input (Max): 42V
Number of Regulators: 1
Supplier Device Package: PG-TO252-5-11
Voltage - Output (Min/Fixed): 5V
Control Features: Reset
Part Status: Active
PSRR: 60dB (100Hz)
Voltage Dropout (Max): 0.5V @ 300mA
Protection Features: Over Current, Over Temperature, Reverse Polarity, Short Circuit
Current - Supply (Max): 22 mA
Produkt ist nicht verfügbar
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IRF3709STRLPBF-INF IRSDS10219-1.pdf?t.download=true&u=5oefqw
IRF3709STRLPBF-INF
Hersteller: Infineon Technologies
Description: HEXFET SMPS POWER MOSFET
Packaging: Bulk
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 15A, 10V
Power Dissipation (Max): 3.1W (Ta), 120W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 2672 pF @ 16 V
Produkt ist nicht verfügbar
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BC856S E6433 INFNS16381-1.pdf?t.download=true&u=5oefqw
BC856S E6433
Hersteller: Infineon Technologies
Description: BIPOLAR GEN PURPOSE TRANSISTOR
Packaging: Bulk
Package / Case: 6-VSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 PNP (Dual)
Operating Temperature: 150°C (TJ)
Power - Max: 250mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 65V
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
Frequency - Transition: 250MHz
Supplier Device Package: SOT-363
Part Status: Active
Produkt ist nicht verfügbar
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BC856S E6327 INFNS16381-1.pdf?t.download=true&u=5oefqw
Hersteller: Infineon Technologies
Description: BIPOLAR GEN PURPOSE TRANSISTOR
Packaging: Bulk
Package / Case: 6-VSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 PNP (Dual)
Operating Temperature: 150°C (TJ)
Power - Max: 250mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 65V
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
Frequency - Transition: 250MHz
Supplier Device Package: SOT-363
Part Status: Active
Produkt ist nicht verfügbar
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IRF7811AVTRPBF-1 IRF7811AVPbF-1_11-20-13.pdf
IRF7811AVTRPBF-1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 30V 10.8A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10.8A (Ta)
Rds On (Max) @ Id, Vgs: 14mOhm @ 15A, 4.5V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SO
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1801 pF @ 10 V
Produkt ist nicht verfügbar
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IRLML2803TRPBF-1 IRLML2803PbF-1_10-28-14.pdf
Hersteller: Infineon Technologies
Description: MOSFET N-CH 30V 1.2A SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.2A (Ta)
Rds On (Max) @ Id, Vgs: 250mOhm @ 910mA, 10V
Power Dissipation (Max): 540mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: Micro3™/SOT-23
Part Status: Obsolete
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 85 pF @ 25 V
Produkt ist nicht verfügbar
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BSC090N03MSGXT INFNS27233-1.pdf?t.download=true&u=5oefqw
BSC090N03MSGXT
Hersteller: Infineon Technologies
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 48A (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 30A, 10V
Power Dissipation (Max): 2.5W (Ta), 32W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TDSON-8-5
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 15 V
auf Bestellung 3649 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1154+0.42 EUR
Mindestbestellmenge: 1154
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FS200R12KT4RPBPSA1 INFNS28545-1.pdf?t.download=true&u=5oefqw
FS200R12KT4RPBPSA1
Hersteller: Infineon Technologies
Description: IGBT MODULE
auf Bestellung 30 Stücke:
Lieferzeit 10-14 Tag (e)
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IRF7455TRPBF-1 IRF7455PbF-1_11-20-13.pdf
IRF7455TRPBF-1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 30V 15A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Ta)
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 15A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 2.8V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 3480 pF @ 25 V
Produkt ist nicht verfügbar
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BCX70GE6327 INFNS11039-1.pdf?t.download=true&u=5oefqw
BCX70GE6327
Hersteller: Infineon Technologies
Description: TRANS NPN 45V 0.1A SOT23
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 550mV @ 1.25mA, 50mA
Current - Collector Cutoff (Max): 20nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 5V
Frequency - Transition: 250MHz
Supplier Device Package: PG-SOT23
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 330 mW
auf Bestellung 243000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
7397+0.067 EUR
Mindestbestellmenge: 7397
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BCX 70J E6327 INFNS11039-1.pdf?t.download=true&u=5oefqw
BCX 70J E6327
Hersteller: Infineon Technologies
Description: TRANS NPN 45V 0.1A SOT23
auf Bestellung 27000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
8013+0.064 EUR
Mindestbestellmenge: 8013
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BCX70JE6327 INFNS11039-1.pdf?t.download=true&u=5oefqw
BCX70JE6327
Hersteller: Infineon Technologies
Description: TRANS NPN 45V 0.1A SOT23
auf Bestellung 22700 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
8013+0.064 EUR
Mindestbestellmenge: 8013
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BCX 70H E6327 INFNS11039-1.pdf?t.download=true&u=5oefqw
BCX 70H E6327
Hersteller: Infineon Technologies
Description: TRANS NPN 45V 0.1A SOT23
auf Bestellung 21000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
8013+0.064 EUR
Mindestbestellmenge: 8013
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BCX70JE6433 INFNS11039-1.pdf?t.download=true&u=5oefqw
BCX70JE6433
Hersteller: Infineon Technologies
Description: TRANS NPN 45V 0.1A SOT23
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 550mV @ 1.25mA, 50mA
Current - Collector Cutoff (Max): 20nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 2mA, 5V
Frequency - Transition: 250MHz
Supplier Device Package: PG-SOT23
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 330 mW
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
7397+0.067 EUR
Mindestbestellmenge: 7397
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BCX70HE6327 INFNS11039-1.pdf?t.download=true&u=5oefqw
BCX70HE6327
Hersteller: Infineon Technologies
Description: TRANS NPN 45V 0.1A SOT23
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 550mV @ 1.25mA, 50mA
Current - Collector Cutoff (Max): 20nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 2mA, 5V
Frequency - Transition: 250MHz
Supplier Device Package: PG-SOT23
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 330 mW
auf Bestellung 71820 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
7397+0.067 EUR
Mindestbestellmenge: 7397
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IPB60R170CFD7ATMA1 Infineon-IPB60R170CFD7-DataSheet-v02_00-EN.pdf?fileId=5546d4626b2d8e69016bb297b1bd19ca
IPB60R170CFD7ATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 600V 14A TO263-3-2
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Rds On (Max) @ Id, Vgs: 170mOhm @ 6A, 10V
Power Dissipation (Max): 75W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 300µA
Supplier Device Package: PG-TO263-3-2
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1190 pF @ 400 V
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1000+2.27 EUR
Mindestbestellmenge: 1000
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IPB60R145CFD7ATMA1 Infineon-IPB60R145CFD7-DataSheet-v02_00-EN.pdf?fileId=5546d4626b2d8e69016bb2979db419c7
IPB60R145CFD7ATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 600V 16A TO263-3-2
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Rds On (Max) @ Id, Vgs: 145mOhm @ 6.8A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 340µA
Supplier Device Package: PG-TO263-3-2
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1330 pF @ 400 V
Produkt ist nicht verfügbar
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IPB60R125CFD7ATMA1 Infineon-IPB60R125CFD7-DataSheet-v02_00-EN.pdf?fileId=5546d4626b2d8e69016bb28e6de719c4
IPB60R125CFD7ATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 600V 18A TO263-3
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 125mOhm @ 7.8A, 10V
Power Dissipation (Max): 92W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 390µA
Supplier Device Package: PG-TO263-3-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1503 pF @ 400 V
Produkt ist nicht verfügbar
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IPB60R105CFD7ATMA1 Infineon-IPB60R105CFD7-DataSheet-v02_00-EN.pdf?fileId=5546d4626b2d8e69016bb24e552a198a
IPB60R105CFD7ATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 600V 21A TO263-3
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
Rds On (Max) @ Id, Vgs: 105mOhm @ 9.3A, 10V
Power Dissipation (Max): 106W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 470µA
Supplier Device Package: PG-TO263-3-2
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1752 pF @ 400 V
Produkt ist nicht verfügbar
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BSP299L6327
Hersteller: Infineon Technologies
Description: SMALL-SIGNAL N-CHANNEL MOSFET
Packaging: Bulk
Produkt ist nicht verfügbar
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BUZ101SL INFNS23686-1.pdf?t.download=true&u=5oefqw
BUZ101SL
Hersteller: Infineon Technologies
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 40mOhm @ 14A, 10V
Power Dissipation (Max): 55W (Tc)
Vgs(th) (Max) @ Id: 2V @ 40µA
Supplier Device Package: PG-TO220-3-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±14V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 25 V
Produkt ist nicht verfügbar
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BUZ101L INFNS01258-1.pdf?t.download=true&u=5oefqw
BUZ101L
Hersteller: Infineon Technologies
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
auf Bestellung 5075 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
709+0.64 EUR
Mindestbestellmenge: 709
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BUZ102SL INFNS23684-1.pdf?t.download=true&u=5oefqw
BUZ102SL
Hersteller: Infineon Technologies
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 47A (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 33A, 10V
Power Dissipation (Max): 120W (Tc)
Vgs(th) (Max) @ Id: 2V @ 90µA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±14V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1730 pF @ 25 V
Produkt ist nicht verfügbar
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BUZ102SL-E3045A INFNS23684-1.pdf?t.download=true&u=5oefqw
BUZ102SL-E3045A
Hersteller: Infineon Technologies
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 47A (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 33A, 10V
Power Dissipation (Max): 120W (Tc)
Vgs(th) (Max) @ Id: 2V @ 90µA
Supplier Device Package: PG-TO263-3-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±14V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1730 pF @ 25 V
Produkt ist nicht verfügbar
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BUZ100S-E3045A INFNS23689-1.pdf?t.download=true&u=5oefqw
BUZ100S-E3045A
Hersteller: Infineon Technologies
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
auf Bestellung 28500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
373+1.19 EUR
Mindestbestellmenge: 373
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BUZ100S INFNS23689-1.pdf?t.download=true&u=5oefqw
BUZ100S
Hersteller: Infineon Technologies
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 77A (Tc)
Rds On (Max) @ Id, Vgs: 15mOhm @ 55A, 10V
Power Dissipation (Max): 170W (Tc)
Vgs(th) (Max) @ Id: 4V @ 130µA
Supplier Device Package: PG-TO220-3-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2375 pF @ 25 V
auf Bestellung 2034 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
373+1.19 EUR
Mindestbestellmenge: 373
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SPA06N60C3IN
SPA06N60C3IN
Hersteller: Infineon Technologies
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Part Status: Active
Produkt ist nicht verfügbar
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SPP06N60C3 Infineon-SPP06N60C3-DS-v01_04-en.pdf?fileId=db3a304412b407950112b42e2a60496d
SPP06N60C3
Hersteller: Infineon Technologies
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.2A (Tc)
Rds On (Max) @ Id, Vgs: 750mOhm @ 3.9A, 10V
Power Dissipation (Max): 74W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 260µA
Supplier Device Package: PG-TO220-3-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 620 pF @ 25 V
Produkt ist nicht verfügbar
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KTY11-5 KT%2CKTY.pdf
KTY11-5
Hersteller: Infineon Technologies
Description: SENSOR PTC 1.97KOHM 3% TO92MINI
Packaging: Bulk
Package / Case: TO-226-2, TO-92-2 (TO-226AC)
Mounting Type: Through Hole
Operating Temperature: -50°C ~ 150°C
Resistance Tolerance: ±3%
Supplier Device Package: TO-92MINI
Resistance @ 25°C: 1.97 kOhms
auf Bestellung 303180 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
774+0.58 EUR
Mindestbestellmenge: 774
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KTY10-7 INFNS04262-1.pdf?t.download=true&u=5oefqw
KTY10-7
Hersteller: Infineon Technologies
Description: SENSOR PTC 2.03KOHM 3% TO92
Packaging: Bulk
Package / Case: TO-226-2, TO-92-2 (TO-226AC)
Mounting Type: Through Hole
Operating Temperature: -50°C ~ 150°C
Resistance Tolerance: ±3%
Supplier Device Package: TO-92
Part Status: Active
Resistance @ 25°C: 2.03 kOhms
auf Bestellung 61470 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1484+0.34 EUR
Mindestbestellmenge: 1484
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KTY10-5 INFNS01010-1.pdf?t.download=true&u=5oefqw
Hersteller: Infineon Technologies
Description: SENSOR PTC 1.97KOHM 1% TO92
Packaging: Bulk
Package / Case: TO-226-2, TO-92-2 (TO-226AC)
Mounting Type: Through Hole
Operating Temperature: -50°C ~ 150°C
Resistance Tolerance: ±1%
Supplier Device Package: TO-92
Part Status: Active
Resistance @ 25°C: 1.97 kOhms
auf Bestellung 218581 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1136+0.39 EUR
Mindestbestellmenge: 1136
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IRF3315PBF irf3315pbf.pdf?fileId=5546d462533600a4015355df13d21915
IRF3315PBF
Hersteller: Infineon Technologies
Description: MOSFET N-CH 150V 23A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 23A (Tc)
Rds On (Max) @ Id, Vgs: 70mOhm @ 12A, 10V
Power Dissipation (Max): 94W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 25 V
Produkt ist nicht verfügbar
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IR21064SPBF-INF
IR21064SPBF-INF
Hersteller: Infineon Technologies
Description: HALF-BRIDGE BASED MOSFET DRIVER
Packaging: Bulk
Part Status: Active
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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SPU07N60S5IN Infineon-SPD_U07N60C3-DS-v02_06-en.pdf?fileId=db3a30431936bc4b0119377a807c3f77
Hersteller: Infineon Technologies
Description: N-CHANNEL POWER MOSFET
Produkt ist nicht verfügbar
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SPI07N60S5IN INFNS14202-1.pdf?t.download=true&u=5oefqw
Hersteller: Infineon Technologies
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.3A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 4.6A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 350µA
Supplier Device Package: PG-TO262-3-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 970 pF @ 25 V
auf Bestellung 373 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
373+1.35 EUR
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SPB07N60S5
Hersteller: Infineon Technologies
Description: N-CHANNEL POWER MOSFET
Produkt ist nicht verfügbar
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SPI07N60S5 INFNS14202-1.pdf?t.download=true&u=5oefqw
SPI07N60S5
Hersteller: Infineon Technologies
Description: N-CHANNEL POWER MOSFET
Produkt ist nicht verfügbar
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TLE42694GMCT TLE42694-DS-v01_41.pdf
TLE42694GMCT
Hersteller: Infineon Technologies
Description: IC REG LINEAR FIXED LDO REG
Packaging: Bulk
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 150mA
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 300 µA
Voltage - Input (Max): 45V
Number of Regulators: 1
Supplier Device Package: PG-DSO-14
Voltage - Output (Min/Fixed): 5V
Control Features: Delay, Reset
Part Status: Active
PSRR: 70dB (100Hz)
Voltage Dropout (Max): 0.5V @ 100mA
Protection Features: Over Current, Over Temperature, Reverse Polarity
Current - Supply (Max): 8 mA
Grade: Automotive
Qualification: AEC-Q100
auf Bestellung 2417 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
387+1.26 EUR
Mindestbestellmenge: 387
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XMC1302Q024X0064ABXUMA1
XMC1302Q024X0064ABXUMA1
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 64KB FLASH 24VQFN
Packaging: Cut Tape (CT)
Package / Case: 24-VFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 32MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: A/D 13x12b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V
Connectivity: I2C, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, I2S, POR, PWM, WDT
Supplier Device Package: PG-VQFN-24-19
Part Status: Active
Number of I/O: 18
DigiKey Programmable: Not Verified
auf Bestellung 9245 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5+3.85 EUR
10+2.86 EUR
25+2.62 EUR
100+2.34 EUR
250+2.21 EUR
500+2.14 EUR
1000+2.07 EUR
2500+2.01 EUR
Mindestbestellmenge: 5
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IPD04N03LBG INFNS11849-1.pdf?t.download=true&u=5oefqw
IPD04N03LBG
Hersteller: Infineon Technologies
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 4.1mOhm @ 50A, 10V
Power Dissipation (Max): 115W (Tc)
Vgs(th) (Max) @ Id: 2V @ 70µA
Supplier Device Package: PG-TO252-3-11
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 5200 pF @ 15 V
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
348+1.3 EUR
Mindestbestellmenge: 348
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IPB04N03LAG INFNS08711-1.pdf?t.download=true&u=5oefqw
IPB04N03LAG
Hersteller: Infineon Technologies
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 3.9mOhm @ 55A, 10V
Power Dissipation (Max): 107W (Tc)
Vgs(th) (Max) @ Id: 2V @ 60µA
Supplier Device Package: PG-TO263-3-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 3877 pF @ 15 V
Produkt ist nicht verfügbar
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TLE5501E0001XUMA1 Infineon-Infineon-TLE5501-DS-v01_00--DS-v01_00-EN.pdf?fileId=5546d46264a8de7e0164eca986da1a32
TLE5501E0001XUMA1
Hersteller: Infineon Technologies
Description: SENSOR ROTARY 360DEG 8DSOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Output: Analog Voltage
Operating Temperature: -40°C ~ 150°C (TA)
Termination Style: Gull Wing
Voltage - Supply: 2.7V ~ 5.5V
Actuator Type: External Magnet, Not Included
Technology: Magnetoresistive
For Measuring: Angle
Supplier Device Package: PG-DSO-8-16
Rotation Angle - Electrical, Mechanical: 0° ~ 360°, Continuous
Output Signal: Cosine, Sine
Grade: Automotive
Qualification: AEC-Q100
Produkt ist nicht verfügbar
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TLE5501E0001XUMA1 Infineon-Infineon-TLE5501-DS-v01_00--DS-v01_00-EN.pdf?fileId=5546d46264a8de7e0164eca986da1a32
TLE5501E0001XUMA1
Hersteller: Infineon Technologies
Description: SENSOR ROTARY 360DEG 8DSOP
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Output: Analog Voltage
Operating Temperature: -40°C ~ 150°C (TA)
Termination Style: Gull Wing
Voltage - Supply: 2.7V ~ 5.5V
Actuator Type: External Magnet, Not Included
Technology: Magnetoresistive
For Measuring: Angle
Supplier Device Package: PG-DSO-8-16
Rotation Angle - Electrical, Mechanical: 0° ~ 360°, Continuous
Output Signal: Cosine, Sine
Grade: Automotive
Qualification: AEC-Q100
auf Bestellung 472 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
7+2.71 EUR
8+2.4 EUR
10+2.29 EUR
25+2.15 EUR
50+2.06 EUR
100+1.97 EUR
Mindestbestellmenge: 7
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BAS 40-07 E6327 INFNS11688-1.pdf?t.download=true&u=5oefqw
BAS 40-07 E6327
Hersteller: Infineon Technologies
Description: RECTIFIER DIODE, SCHOTTKY
auf Bestellung 12000 Stücke:
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IRG4BC40UPBF-INF
Hersteller: Infineon Technologies
Description: ULTRAFAST SPEED IGBT
Packaging: Bulk
Part Status: Active
auf Bestellung 64 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
64+7 EUR
Mindestbestellmenge: 64
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BSO080P03NS3GXUMA1 BSO080P03NS3_G_2.2.pdf?folderId=db3a304314dca38901154a72e3951a65&fileId=db3a3043284aacd801286d7aee12296a
BSO080P03NS3GXUMA1
Hersteller: Infineon Technologies
Description: MOSFET P-CH 30V 12A 8DSO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Ta)
Rds On (Max) @ Id, Vgs: 8mOhm @ 14.8A, 10V
Power Dissipation (Max): 1.6W (Ta)
Vgs(th) (Max) @ Id: 3.1V @ 150µA
Supplier Device Package: PG-DSO-8
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 81 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6750 pF @ 15 V
Produkt ist nicht verfügbar
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IRFS30067PPBF IRSDS09929-1.pdf?t.download=true&u=5oefqw
Hersteller: Infineon Technologies
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-263-7, D²Pak (6 Leads + Tab), TO-263CB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 240A (Tc)
Rds On (Max) @ Id, Vgs: 2.1mOhm @ 168A, 10V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK (7-Lead)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 300 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8850 pF @ 50 V
Produkt ist nicht verfügbar
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SIPC69SN60C3X2SA2
Hersteller: Infineon Technologies
Description: MOSFET
Packaging: Bulk
Part Status: Active
Produkt ist nicht verfügbar
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TLE6208-6GXUMA2 Infineon-TLE6208_6G-DS-v01_02-en.pdf?fileId=db3a30431c48a312011c4c052072000c
TLE6208-6GXUMA2
Hersteller: Infineon Technologies
Description: BRUSH DC MOTOR CONTROLLER
Packaging: Bulk
Package / Case: 28-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 600mA
Interface: SPI
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge (6)
Voltage - Supply: 4.75V ~ 5.5V
Applications: General Purpose
Technology: DMOS
Voltage - Load: 5.5V ~ 40V
Supplier Device Package: PG-DSO-28-41
Motor Type - AC, DC: Brushed DC
Part Status: Active
Produkt ist nicht verfügbar
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TLE62086G Infineon-TLE6208_6G-DS-v01_02-en.pdf?fileId=db3a30431c48a312011c4c052072000c
TLE62086G
Hersteller: Infineon Technologies
Description: BRUSH DC MOTOR CONTROLLER
Packaging: Bulk
Package / Case: 28-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 600mA
Interface: SPI
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge (6)
Voltage - Supply: 4.75V ~ 5.5V
Applications: Automotive
Technology: DMOS
Voltage - Load: 5.5V ~ 40V
Supplier Device Package: PG-DSO-28-41
Motor Type - AC, DC: Brushed DC
Part Status: Active
Produkt ist nicht verfügbar
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BC856AE6327 INFNS12319-1.pdf?t.download=true&u=5oefqw
BC856AE6327
Hersteller: Infineon Technologies
Description: TRANS PNP 65V 0.1A PG-SOT23-3-1
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 125 @ 2mA, 5V
Frequency - Transition: 250MHz
Supplier Device Package: PG-SOT23-3-1
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 65 V
Power - Max: 330 mW
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 48000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
8955+0.045 EUR
Mindestbestellmenge: 8955
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BC856A-E6327 INFNS12319-1.pdf?t.download=true&u=5oefqw
BC856A-E6327
Hersteller: Infineon Technologies
Description: TRANS PNP 65V 0.1A PG-SOT23-3-1
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 125 @ 2mA, 5V
Frequency - Transition: 250MHz
Supplier Device Package: PG-SOT23-3-1
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 65 V
Power - Max: 330 mW
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 18000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
8955+0.045 EUR
Mindestbestellmenge: 8955
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IGCM04B60HAXKMA1 IGCM04B60HA.pdf
IGCM04B60HAXKMA1
Hersteller: Infineon Technologies
Description: IGBT 600V 24MDIP
Packaging: Tube
Package / Case: 24-PowerDIP Module (1.028", 26.10mm)
Mounting Type: Through Hole
Type: IGBT
Configuration: 3 Phase
Voltage - Isolation: 2000Vrms
Part Status: Obsolete
Current: 4 A
Voltage: 600 V
auf Bestellung 280 Stücke:
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Anzahl Preis
46+11.2 EUR
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IGCM04B60GAXKMA1 IGCM04B60GA.pdf
IGCM04B60GAXKMA1
Hersteller: Infineon Technologies
Description: IGBT 600V 24MDIP
Packaging: Tube
Package / Case: 24-PowerDIP Module (1.028", 26.10mm)
Mounting Type: Through Hole
Type: IGBT
Configuration: 3 Phase
Voltage - Isolation: 2000Vrms
Part Status: Obsolete
Current: 4 A
Voltage: 600 V
auf Bestellung 2143 Stücke:
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Anzahl Preis
40+12.3 EUR
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IGCM06F60HAXKMA1 IGCM06F60HA.pdf
IGCM06F60HAXKMA1
Hersteller: Infineon Technologies
Description: IGBT 600V 24MDIP
Packaging: Tube
Package / Case: 24-PowerDIP Module (1.028", 26.10mm)
Mounting Type: Through Hole
Type: IGBT
Configuration: 3 Phase
Voltage - Isolation: 2000Vrms
Part Status: Obsolete
Current: 6 A
Voltage: 600 V
auf Bestellung 1915 Stücke:
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Anzahl Preis
54+8.74 EUR
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IGCM10B60GAXKMA1
Hersteller: Infineon Technologies
Description: IGBT 600V 24MDIP
Packaging: Tube
Mounting Type: Through Hole
Part Status: Obsolete
Produkt ist nicht verfügbar
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SAF-TC1165-192F80HLAA
SAF-TC1165-192F80HLAA
Hersteller: Infineon Technologies
Description: RISC FLASH MICROCONTROLLER, 32 B
Packaging: Bulk
Package / Case: 176-LQFP
Mounting Type: Surface Mount
Speed: 80MHz
Program Memory Size: 1.5MB (1.5M x 8)
RAM Size: 100K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
Core Processor: TriCore™
Data Converters: A/D 36x12b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.42V ~ 1.58V
Connectivity: CANbus, SPI, UART/USART
Peripherals: DMA, POR, WDT
Supplier Device Package: PG-LQFP-176-2
Part Status: Active
Number of I/O: 81
DigiKey Programmable: Not Verified
auf Bestellung 240 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
17+26.09 EUR
Mindestbestellmenge: 17
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BC856UE6327HTSA1 bc856s_bc856u_bc857s.pdf?folderId=db3a304314dca389011541d30fa21656&fileId=db3a304314dca38901154200fdcd16ef
BC856UE6327HTSA1
Hersteller: Infineon Technologies
Description: TRANS 2PNP 65V 100MA PG-SC74-6
Packaging: Bulk
Package / Case: SC-74, SOT-457
Mounting Type: Surface Mount
Transistor Type: 2 PNP (Dual)
Operating Temperature: 150°C (TJ)
Power - Max: 250mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 65V
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
Frequency - Transition: 250MHz
Supplier Device Package: PG-SC74-6
Part Status: Last Time Buy
auf Bestellung 30999 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1982+0.23 EUR
Mindestbestellmenge: 1982
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IHW20N135R5XKSA INFN-S-A0001300633-1.pdf?t.download=true&u=5oefqw
IHW20N135R5XKSA
Hersteller: Infineon Technologies
Description: REVERSE CONDUCTING IGBT
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.85V @ 15V, 20A
Supplier Device Package: PG-TO247-3-41
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: -/235ns
Switching Energy: 950µJ (off)
Test Condition: 600V, 20A, 10Ohm, 15V
Gate Charge: 170 nC
Part Status: Active
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 1350 V
Current - Collector Pulsed (Icm): 60 A
Power - Max: 288 W
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IHW20N135R3 INFN-S-A0004848099-1.pdf?t.download=true&u=5oefqw
IHW20N135R3
Hersteller: Infineon Technologies
Description: REVERSE CONDUCTING IGBT W/MONOLT
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 20A
Supplier Device Package: PG-TO247-3-41
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: -/335ns
Switching Energy: -, 1.3mJ (off)
Test Condition: 600V, 20A, 15Ohm, 15V
Gate Charge: 195 nC
Part Status: Active
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 1350 V
Current - Collector Pulsed (Icm): 60 A
Power - Max: 310 W
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