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IRF7420TRPBF IRF7420TRPBF Infineon Technologies irf7420pbf.pdf?fileId=5546d462533600a4015355fade041bcc Description: MOSFET P-CH 12V 11.5A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 11.5A (Tc)
Rds On (Max) @ Id, Vgs: 14mOhm @ 11.5A, 4.5V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: 8-SO
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 3529 pF @ 10 V
Produkt ist nicht verfügbar
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IRF7420 IRF7420 Infineon Technologies irf7420pbf.pdf?fileId=5546d462533600a4015355fade041bcc Description: MOSFET P-CH 12V 11.5A 8SO
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 11.5A (Tc)
Rds On (Max) @ Id, Vgs: 14mOhm @ 11.5A, 4.5V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: 8-SO
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 3529 pF @ 10 V
Produkt ist nicht verfügbar
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IRF7420TR IRF7420TR Infineon Technologies irf7420pbf.pdf?fileId=5546d462533600a4015355fade041bcc Description: MOSFET P-CH 12V 11.5A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 11.5A (Tc)
Rds On (Max) @ Id, Vgs: 14mOhm @ 11.5A, 4.5V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: 8-SO
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 3529 pF @ 10 V
Produkt ist nicht verfügbar
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IPA50R140CPXK Infineon Technologies INFN-S-A0004583226-1.pdf?t.download=true&u=5oefqw Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 23A (Tc)
Rds On (Max) @ Id, Vgs: 140mOhm @ 14A, 10V
Power Dissipation (Max): 34W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 930µA
Supplier Device Package: PG-TO220-3-111
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2540 pF @ 100 V
Produkt ist nicht verfügbar
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TLE94108ELXUMA1 TLE94108ELXUMA1 Infineon Technologies Infineon-TLE94108EL-DS-v01_00-EN.pdf?fileId=5546d462576f347501579a157dc07d16 Description: IC HALF BRIDGE DRVR 500MA 24SSOP
Packaging: Tape & Reel (TR)
Package / Case: 24-LSSOP (0.154", 3.90mm Width) Exposed Pad
Mounting Type: Surface Mount
Interface: SPI
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge (8)
Voltage - Supply: 3V ~ 5.5V
Rds On (Typ): 850mOhm LS, 850mOhm HS
Applications: AC Motors, DC Motors, General Purpose
Current - Output / Channel: 500mA
Current - Peak Output: 2A
Technology: Power MOSFET
Voltage - Load: 5.5V ~ 20V
Supplier Device Package: PG-SSOP-24-4
Fault Protection: Over Temperature, Short Circuit, UVLO
Load Type: Inductive
Part Status: Not For New Designs
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TLE94108ELXUMA1 TLE94108ELXUMA1 Infineon Technologies Infineon-TLE94108EL-DS-v01_00-EN.pdf?fileId=5546d462576f347501579a157dc07d16 Description: IC HALF BRIDGE DRVR 500MA 24SSOP
Packaging: Cut Tape (CT)
Package / Case: 24-LSSOP (0.154", 3.90mm Width) Exposed Pad
Mounting Type: Surface Mount
Interface: SPI
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge (8)
Voltage - Supply: 3V ~ 5.5V
Rds On (Typ): 850mOhm LS, 850mOhm HS
Applications: AC Motors, DC Motors, General Purpose
Current - Output / Channel: 500mA
Current - Peak Output: 2A
Technology: Power MOSFET
Voltage - Load: 5.5V ~ 20V
Supplier Device Package: PG-SSOP-24-4
Fault Protection: Over Temperature, Short Circuit, UVLO
Load Type: Inductive
Part Status: Not For New Designs
Produkt ist nicht verfügbar
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TLE94110ELXUMA1 TLE94110ELXUMA1 Infineon Technologies Infineon-TLE94110EL-DS-v01_00-EN.pdf?fileId=5546d462576f347501579a278c3f7d3b Description: IC HALF BRIDGE DRVR 500MA 24SSOP
Packaging: Cut Tape (CT)
Package / Case: 24-LSSOP (0.154", 3.90mm Width) Exposed Pad
Mounting Type: Surface Mount
Interface: SPI
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge (10)
Voltage - Supply: 3V ~ 5.5V
Rds On (Typ): 850mOhm LS, 850mOhm HS
Applications: AC Motors, DC Motors, General Purpose
Current - Output / Channel: 500mA
Current - Peak Output: 2A
Technology: Power MOSFET
Voltage - Load: 5.5V ~ 20V
Supplier Device Package: PG-SSOP-24-4
Fault Protection: Over Temperature, Short Circuit, UVLO
Load Type: Inductive
Part Status: Not For New Designs
Produkt ist nicht verfügbar
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XC8662FRA5VBEAXUMA1 XC8662FRA5VBEAXUMA1 Infineon Technologies Infineon-SAA_XC866-DS-v01_05-en.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a30431689f442011690d942dc0119&ack=t Description: IC MCU 8BIT 8KB FLASH 38TSSOP
Packaging: Cut Tape (CT)
Package / Case: 38-TFSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Speed: 86MHz
Program Memory Size: 8KB (8K x 8)
RAM Size: 768 x 8
Operating Temperature: -40°C ~ 140°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: XC800
Data Converters: A/D 8x10b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 2.3V ~ 5.5V
Connectivity: SSI, UART/USART
Peripherals: Brown-out Detect/Reset, POR, PWM, WDT
Supplier Device Package: PG-TSSOP-38
Part Status: Discontinued at Digi-Key
Number of I/O: 27
Produkt ist nicht verfügbar
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BCP68E6327 BCP68E6327 Infineon Technologies INFNS07783-1.pdf?t.download=true&u=5oefqw Description: POWER BIPOLAR TRANSISTOR
Packaging: Bulk
Part Status: Active
auf Bestellung 6000 Stücke:
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4261+0.11 EUR
Mindestbestellmenge: 4261
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BGA711N7E6327XTSA1 BGA711N7E6327XTSA1 Infineon Technologies BGA711N7.pdf Description: IC AMP 1.8GHZ-2.7GHZ TSNP7-1
Packaging: Bulk
Package / Case: 6-XFDFN Exposed Pad
Mounting Type: Surface Mount
Frequency: 1.8GHz ~ 2.7GHz
Voltage - Supply: 3.6V
Gain: 17dB
Current - Supply: 10mA
Noise Figure: 1.1dB
P1dB: -8dBm
Supplier Device Package: PG-TSNP-7-1
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BGA711L7E6327 Infineon Technologies Description: IC AMP GPS 400MHZ-6GHZ TSLP7-8
Packaging: Bulk
Package / Case: 6-XFDFN Exposed Pad
Mounting Type: Surface Mount
Frequency: 400MHz ~ 6GHz
RF Type: General Purpose
Voltage - Supply: 2.75V
Gain: 21.5dB
Current - Supply: 5.8mA
Noise Figure: 0.75dB
P1dB: -20.5dBm
Test Frequency: 1575.42MHz
Supplier Device Package: PG-TSLP-7-8
Part Status: Active
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799+0.61 EUR
Mindestbestellmenge: 799
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PMA7110 Infineon Technologies INFNS17057-1.pdf?t.download=true&u=5oefqw Description: 8-BIT FLASH MCU, 8051 CPU, 12MHZ
Packaging: Bulk
Package / Case: 38-TFSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Frequency: 315MHz, 434MHz, 868MHz, 915MHz
Memory Size: 6kB Flash, 12kB ROM, 256B RAM
Type: TxRx + MCU
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.9V ~ 3.6V
Power - Output: 10dBm
Data Rate (Max): 32kbps
Current - Transmitting: 8.9mA ~ 17.1mA
Supplier Device Package: PG-TSSOP-38
GPIO: 10
Modulation: ASK, FSK
RF Family/Standard: General ISM < 1GHz
Serial Interfaces: I²C, SPI
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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BSS88 BSS88 Infineon Technologies INFNS23727-1.pdf?t.download=true&u=5oefqw Description: N-CHANNEL ENHANCEMENT IGBT
Packaging: Bulk
Part Status: Active
Produkt ist nicht verfügbar
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BSC061N08NS5ATMA1 BSC061N08NS5ATMA1 Infineon Technologies Infineon-BSC061N08NS5-DS-v02_00-EN.pdf?fileId=5546d4624ad04ef9014ae3ab1bb62b69 Description: MOSFET N-CH 80V 82A TDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 82A (Tc)
Rds On (Max) @ Id, Vgs: 6.1mOhm @ 41A, 10V
Power Dissipation (Max): 2.5W (Ta), 74W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 41µA
Supplier Device Package: PG-TDSON-8-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 40 V
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5000+1.23 EUR
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BSC061N08NS5ATMA1 BSC061N08NS5ATMA1 Infineon Technologies Infineon-BSC061N08NS5-DS-v02_00-EN.pdf?fileId=5546d4624ad04ef9014ae3ab1bb62b69 Description: MOSFET N-CH 80V 82A TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 82A (Tc)
Rds On (Max) @ Id, Vgs: 6.1mOhm @ 41A, 10V
Power Dissipation (Max): 2.5W (Ta), 74W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 41µA
Supplier Device Package: PG-TDSON-8-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 40 V
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6+3.08 EUR
10+2.26 EUR
100+1.73 EUR
500+1.39 EUR
1000+1.38 EUR
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S25FS512SDSMFI011 S25FS512SDSMFI011 Infineon Technologies Infineon-S25FS512S_512_Mb_1.8_V_Serial_Peripheral_Interface_with_Multi-I_O_Non-Volatile_Flash-DataSheet-v14_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed681a356fe&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en Description: IC FLASH 512MBIT SPI/QUAD 16SOIC
Packaging: Tube
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 2V
Technology: FLASH - NOR
Clock Frequency: 80 MHz
Memory Format: FLASH
Supplier Device Package: 16-SOIC
Part Status: Active
Memory Interface: SPI - Quad I/O, QPI
Memory Organization: 64M x 8
DigiKey Programmable: Not Verified
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2+15.98 EUR
10+14.19 EUR
47+13.1 EUR
94+12.63 EUR
141+12.37 EUR
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BAT60AE6327 BAT60AE6327 Infineon Technologies INFNS11560-1.pdf?t.download=true&u=5oefqw Description: RECTIFIER DIODE, SCHOTTKY
Packaging: Bulk
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 20pF @ 5V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: PG-SOD323-2-1
Operating Temperature - Junction: 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 10 V
Voltage - Forward (Vf) (Max) @ If: 370 mV @ 1 A
Current - Reverse Leakage @ Vr: 2.6 mA @ 8 V
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IR21824 IR21824 Infineon Technologies ir2181.pdf?fileId=5546d462533600a4015355c93cdd16ce Description: IC GATE DRVR HALF-BRIDGE 14DIP
Packaging: Tube
Package / Case: 14-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 14-DIP
Rise / Fall Time (Typ): 40ns, 20ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.7V
Current - Peak Output (Source, Sink): 1.9A, 2.3A
Part Status: Obsolete
DigiKey Programmable: Not Verified
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IR21824S IR21824S Infineon Technologies ir2181.pdf?fileId=5546d462533600a4015355c93cdd16ce Description: IC GATE DRVR HALF-BRIDGE 14SOIC
Packaging: Tube
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 14-SOIC
Rise / Fall Time (Typ): 40ns, 20ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.7V
Current - Peak Output (Source, Sink): 1.9A, 2.3A
Part Status: Obsolete
DigiKey Programmable: Not Verified
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IR2182 IR2182 Infineon Technologies ir2181.pdf?fileId=5546d462533600a4015355c93cdd16ce Description: IC GATE DRVR HALF-BRIDGE 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-PDIP
Rise / Fall Time (Typ): 40ns, 20ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.7V
Current - Peak Output (Source, Sink): 1.9A, 2.3A
Part Status: Obsolete
DigiKey Programmable: Not Verified
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IR2182S IR2182S Infineon Technologies ir2181.pdf?fileId=5546d462533600a4015355c93cdd16ce Description: IC GATE DRVR HALF-BRIDGE 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 40ns, 20ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.7V
Current - Peak Output (Source, Sink): 1.9A, 2.3A
Part Status: Obsolete
DigiKey Programmable: Not Verified
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SPI15N65C3 SPI15N65C3 Infineon Technologies Infineon-SPI15N65C3-DS-v02_00-en.pdf?fileId=db3a30431689f4420116d3acc8fe0c5a Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 9.4A, 10V
Power Dissipation (Max): 156W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 675µA
Supplier Device Package: PG-TO262-3-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 25 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 25
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TLE4941PLUSCAAMA1 TLE4941PLUSCAAMA1 Infineon Technologies Infineon-TLE4941plusC_PB-PB-v01_01-EN.PDF?fileId=5546d4625607bd1301560cafae653a04&ack=t Description: MAG SWITCH SPEC PURP SSO-2-53
Packaging: Tape & Box (TB)
Package / Case: 2-SIP, SSO-2-53
Output Type: Current Source
Mounting Type: Through Hole
Function: Special Purpose
Voltage - Supply: 4.5V ~ 20V
Technology: Hall Effect
Current - Supply (Max): 16.8mA
Supplier Device Package: PG-SSO-2-53
Grade: Automotive
Qualification: AEC-Q100
Produkt ist nicht verfügbar
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CY14V101NA-BA45XI CY14V101NA-BA45XI Infineon Technologies download Description: IC NVSRAM 1MBIT PARALLEL 48FBGA
Packaging: Tray
Package / Case: 48-TFBGA
Mounting Type: Surface Mount
Memory Size: 1Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: NVSRAM (Non-Volatile SRAM)
Memory Format: NVSRAM
Supplier Device Package: 48-FBGA (6x10)
Part Status: Active
Write Cycle Time - Word, Page: 45ns
Memory Interface: Parallel
Access Time: 45 ns
Memory Organization: 64K x 16
DigiKey Programmable: Not Verified
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IRFH5025TRPBF IRFH5025TRPBF Infineon Technologies irfh5025pbf.pdf?fileId=5546d462533600a40153561acde51ea0 Description: MOSFET N-CH 250V 3.8A 8PQFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.8A (Ta)
Rds On (Max) @ Id, Vgs: 100mOhm @ 5.7A, 10V
Power Dissipation (Max): 3.6W (Ta), 8.3W (Tc)
Vgs(th) (Max) @ Id: 5V @ 150µA
Supplier Device Package: 8-PQFN (5x6)
Part Status: Last Time Buy
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2150 pF @ 50 V
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IRFH5025TRPBF IRFH5025TRPBF Infineon Technologies irfh5025pbf.pdf?fileId=5546d462533600a40153561acde51ea0 Description: MOSFET N-CH 250V 3.8A 8PQFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.8A (Ta)
Rds On (Max) @ Id, Vgs: 100mOhm @ 5.7A, 10V
Power Dissipation (Max): 3.6W (Ta), 8.3W (Tc)
Vgs(th) (Max) @ Id: 5V @ 150µA
Supplier Device Package: 8-PQFN (5x6)
Part Status: Last Time Buy
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2150 pF @ 50 V
auf Bestellung 366 Stücke:
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TD285N16KOFHPSA2 TD285N16KOFHPSA2 Infineon Technologies Infineon-TT285N16KOF-DS-v03_04-EN.pdf?fileId=db3a304412b407950112b42f7b4d4bc5 Description: SCR MODULE 1600V 520A MODULE
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IPF13N03LAG Infineon Technologies INFNS11986-1.pdf?t.download=true&u=5oefqw Description: N-CHANNEL POWER MOSFET
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IPP13N03LB G IPP13N03LB G Infineon Technologies IPP13N03LB_G.pdf Description: MOSFET N-CH 30V 30A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 12.8mOhm @ 30A, 10V
Power Dissipation (Max): 52W (Tc)
Vgs(th) (Max) @ Id: 2V @ 20µA
Supplier Device Package: PG-TO220-3-1
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1355 pF @ 15 V
Produkt ist nicht verfügbar
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IPS13N03LA G IPS13N03LA G Infineon Technologies ipd13n03la_rev2.1_g.pdf Description: MOSFET N-CH 25V 30A TO251-3
Packaging: Tube
Package / Case: TO-251-3 Stub Leads, IPak
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 12.8mOhm @ 30A, 10V
Power Dissipation (Max): 46W (Tc)
Vgs(th) (Max) @ Id: 2V @ 20µA
Supplier Device Package: PG-TO251-3-11
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 8.3 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1043 pF @ 15 V
Produkt ist nicht verfügbar
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BTT60302ERAXUMA1 BTT60302ERAXUMA1 Infineon Technologies Infineon-BTT6030-2ERA-DS-v01_00-EN.pdf?fileId=5546d46269e1c019016a21fa44260d82 Description: IC PWR SWITCH N-CHAN 1:1 TDSO-14
Packaging: Cut Tape (CT)
Package / Case: 14-SOIC (0.154", 3.90mm Width) Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 2
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 32mOhm
Input Type: Non-Inverting
Voltage - Load: 5V ~ 36V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 4A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-TDSO-14-31
Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, Over Voltage
Part Status: Active
Grade: Automotive
Qualification: AEC-Q100
auf Bestellung 6744 Stücke:
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10+4.39 EUR
25+4.04 EUR
100+3.65 EUR
250+3.46 EUR
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IPB027N10N5ATMA1 IPB027N10N5ATMA1 Infineon Technologies Infineon-IPB027N10N5-DS-v02_01-EN.pdf?fileId=5546d4624ad04ef9014adf44f3dd7c86 Description: MOSFET N-CH 100V 120A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 2.7mOhm @ 100A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 184µA
Supplier Device Package: PG-TO263-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 139 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10300 pF @ 50 V
auf Bestellung 4015 Stücke:
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FP75R12KT4B16BOSA1 FP75R12KT4B16BOSA1 Infineon Technologies Infineon-FP75R12KT4-DS-v03_00-CN.pdf?fileId=db3a30433dd58def013dd99b7db3181f Description: IGBT MOD 1200V 150A 385W MOD
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Three Phase Bridge Rectifier
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.25V @ 15V, 75A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 150 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 385 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 4.3 nF @ 25 V
auf Bestellung 15 Stücke:
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FP75R12KT4PBPSA1 FP75R12KT4PBPSA1 Infineon Technologies Infineon-FP75R12KT4P-DS-v03_00-EN.pdf?fileId=5546d4625b3ca4ec015b57eb5fec0401 Description: IGBT MODULE 1200V 150A MODULE
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Three Phase Bridge Rectifier
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 75A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 150 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 4.3 nF @ 25 V
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IPA65R600C6 Infineon Technologies INFNS28015-1.pdf?t.download=true&u=5oefqw Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.3A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 2.1A, 10V
Power Dissipation (Max): 28W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 210µA
Supplier Device Package: PG-TO220-3-111
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 440 pF @ 100 V
Produkt ist nicht verfügbar
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IPA65R660CFDXKSA2 IPA65R660CFDXKSA2 Infineon Technologies Infineon-IPA65R660CFD-DataSheet-v02_07-EN.pdf?fileId=5546d462727878c201727e85f6c15b38 Description: MOSFET N-CH 700V 6A TO220
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 660mOhm @ 2.1A, 10V
Power Dissipation (Max): 27.8W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 200µA
Supplier Device Package: PG-TO220 Full Pack
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 615 pF @ 100 V
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IPA65R099C6XKSA1 IPA65R099C6XKSA1 Infineon Technologies IPx65R099C6.pdf Description: MOSFET N-CH 650V 38A TO220
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 38A (Tc)
Rds On (Max) @ Id, Vgs: 99mOhm @ 12.8A, 10V
Power Dissipation (Max): 35W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 1.2mA
Supplier Device Package: PG-TO220-3-111
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 127 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2780 pF @ 100 V
Produkt ist nicht verfügbar
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IRL3714TR IRL3714TR Infineon Technologies Part_Number_Guide_Web.pdf Description: MOSFET N-CH 20V 36A TO220AB
Packaging: Tape & Reel (TR)
Package / Case: TO-220-3
Mounting Type: Through Hole
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ 18A, 10V
Power Dissipation (Max): 47W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 9.7 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 670 pF @ 10 V
Produkt ist nicht verfügbar
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IRL3715TR IRL3715TR Infineon Technologies irl3715.pdf Description: MOSFET N-CH 20V 54A TO220AB
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IRL3715TRL IRL3715TRL Infineon Technologies irl3715.pdf Description: MOSFET N-CH 20V 54A TO220AB
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IRL3715TRR IRL3715TRR Infineon Technologies irl3715.pdf Description: MOSFET N-CH 20V 54A TO220AB
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BC848B-E6327 BC848B-E6327 Infineon Technologies INFNS14907-1.pdf?t.download=true&u=5oefqw Description: TRANS NPN 30V 0.1A SOT23
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
Frequency - Transition: 250MHz
Supplier Device Package: PG-SOT23
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 330 mW
Produkt ist nicht verfügbar
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BC846SE6327 BC846SE6327 Infineon Technologies INFNS17743-1.pdf?t.download=true&u=5oefqw Description: BIPOLAR GEN PURPOSE TRANSISTOR
Packaging: Bulk
Package / Case: 6-VSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 NPN (Dual)
Operating Temperature: 150°C (TJ)
Power - Max: 250mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 65V
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
Frequency - Transition: 250MHz
Supplier Device Package: PG-SOT363-6-1
Part Status: Active
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BCR133WH6327 BCR133WH6327 Infineon Technologies INFNS17147-1.pdf?t.download=true&u=5oefqw Description: BIPOLAR DIGITAL TRANSISTOR
Packaging: Bulk
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V
Supplier Device Package: PG-SOT323-3-1
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 250 mW
Frequency - Transition: 130 MHz
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 10 kOhms
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BCR133WE6327 BCR133WE6327 Infineon Technologies INFNS11633-1.pdf?t.download=true&u=5oefqw Description: BIPOLAR DIGITAL TRANSISTOR
Packaging: Bulk
Part Status: Active
Produkt ist nicht verfügbar
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XMC1301T016F0008AAXUMA1 XMC1301T016F0008AAXUMA1 Infineon Technologies XMC1300.pdf Description: IC MCU 32BIT 8KB FLASH 16TSSOP
Packaging: Bulk
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Speed: 32MHz
Program Memory Size: 8KB (8K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: A/D 11x12b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V
Connectivity: I2C, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, I2S, POR, PWM, WDT
Supplier Device Package: PG-TSSOP-16-8
Part Status: Obsolete
Number of I/O: 11
DigiKey Programmable: Not Verified
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371+1.22 EUR
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XMC1100T016X0016AAXUMA1 XMC1100T016X0016AAXUMA1 Infineon Technologies XMC1100.pdf Description: IC MCU 32BIT 16KB FLASH 16TSSOP
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2ED2109S06FXUMA1 2ED2109S06FXUMA1 Infineon Technologies Infineon-2ED2109-4-S06F-J-DataSheet-v02_00-EN.pdf?fileId=5546d4626cb27db2016cb8d7493e29eb Description: IC GATE DRVR HALF-BRIDGE 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 650 V
Supplier Device Package: PG-DSO-8-53
Rise / Fall Time (Typ): 100ns, 35ns
Channel Type: Synchronous
Driven Configuration: Half-Bridge
Number of Drivers: 1
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 1.1V, 1.7V
Current - Peak Output (Source, Sink): 290mA, 700mA
Part Status: Active
DigiKey Programmable: Not Verified
auf Bestellung 2500 Stücke:
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2500+0.87 EUR
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2ED2109S06FXUMA1 2ED2109S06FXUMA1 Infineon Technologies Infineon-2ED2109-4-S06F-J-DataSheet-v02_00-EN.pdf?fileId=5546d4626cb27db2016cb8d7493e29eb Description: IC GATE DRVR HALF-BRIDGE 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 650 V
Supplier Device Package: PG-DSO-8-53
Rise / Fall Time (Typ): 100ns, 35ns
Channel Type: Synchronous
Driven Configuration: Half-Bridge
Number of Drivers: 1
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 1.1V, 1.7V
Current - Peak Output (Source, Sink): 290mA, 700mA
Part Status: Active
DigiKey Programmable: Not Verified
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10+1.81 EUR
14+1.31 EUR
25+1.18 EUR
100+1.05 EUR
250+0.98 EUR
500+0.94 EUR
1000+0.91 EUR
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2ED21064S06JXUMA1 2ED21064S06JXUMA1 Infineon Technologies Infineon-2ED2106-4-S06F-J-DataSheet-v02_10-EN.pdf?fileId=5546d4626cb27db2016cb8d7402029e7 Description: IC GATE DRVR HI/LOW SIDE 14SOIC
Packaging: Tape & Reel (TR)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 10V ~ 20V
High Side Voltage - Max (Bootstrap): 20 V
Supplier Device Package: PG-DSO-14
Rise / Fall Time (Typ): 100ns, 35ns
Channel Type: Independent
Driven Configuration: High-Side and Low-Side
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 1.1V, 1.7V
Current - Peak Output (Source, Sink): 290mA, 700mA
Part Status: Active
DigiKey Programmable: Not Verified
auf Bestellung 2500 Stücke:
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2500+1.36 EUR
Mindestbestellmenge: 2500
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2ED21064S06JXUMA1 2ED21064S06JXUMA1 Infineon Technologies Infineon-2ED2106-4-S06F-J-DataSheet-v02_10-EN.pdf?fileId=5546d4626cb27db2016cb8d7402029e7 Description: IC GATE DRVR HI/LOW SIDE 14SOIC
Packaging: Cut Tape (CT)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 10V ~ 20V
High Side Voltage - Max (Bootstrap): 20 V
Supplier Device Package: PG-DSO-14
Rise / Fall Time (Typ): 100ns, 35ns
Channel Type: Independent
Driven Configuration: High-Side and Low-Side
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 1.1V, 1.7V
Current - Peak Output (Source, Sink): 290mA, 700mA
Part Status: Active
DigiKey Programmable: Not Verified
auf Bestellung 4994 Stücke:
Lieferzeit 10-14 Tag (e)
7+2.73 EUR
10+2 EUR
25+1.81 EUR
100+1.61 EUR
250+1.52 EUR
500+1.46 EUR
1000+1.41 EUR
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2ED21091S06FXUMA1 2ED21091S06FXUMA1 Infineon Technologies Infineon-2ED21091S06F-DataSheet-v02_10-EN.pdf?fileId=5546d4626cb27db2016cb8d7765529ff Description: IC GATE DRVR HI/LOW SIDE 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 10V ~ 20V
High Side Voltage - Max (Bootstrap): 675 V
Supplier Device Package: PG-DSO-8
Rise / Fall Time (Typ): 100ns, 35ns
Channel Type: Independent
Driven Configuration: High-Side and Low-Side
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 1.1V, 1.7V
Current - Peak Output (Source, Sink): 290mA, 700mA
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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2ED21091S06FXUMA1 2ED21091S06FXUMA1 Infineon Technologies Infineon-2ED21091S06F-DataSheet-v02_10-EN.pdf?fileId=5546d4626cb27db2016cb8d7765529ff Description: IC GATE DRVR HI/LOW SIDE 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 10V ~ 20V
High Side Voltage - Max (Bootstrap): 675 V
Supplier Device Package: PG-DSO-8
Rise / Fall Time (Typ): 100ns, 35ns
Channel Type: Independent
Driven Configuration: High-Side and Low-Side
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 1.1V, 1.7V
Current - Peak Output (Source, Sink): 290mA, 700mA
DigiKey Programmable: Not Verified
auf Bestellung 2430 Stücke:
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10+1.85 EUR
14+1.33 EUR
25+1.2 EUR
100+1.06 EUR
250+1 EUR
500+0.96 EUR
1000+0.92 EUR
Mindestbestellmenge: 10
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2ED2108S06FXUMA1 2ED2108S06FXUMA1 Infineon Technologies Infineon-2ED2108-4-S06F-J-DataSheet-v02_10-EN.pdf?fileId=5546d4626cb27db2016cb8d752c029ef Description: IC GATE DRVR HALF-BRIDGE 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 650 V
Supplier Device Package: PG-DSO-8-53
Rise / Fall Time (Typ): 100ns, 35ns
Channel Type: Synchronous
Driven Configuration: Half-Bridge
Number of Drivers: 1
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 1.1V, 1.7V
Current - Peak Output (Source, Sink): 290mA, 700mA
Part Status: Active
DigiKey Programmable: Not Verified
auf Bestellung 7500 Stücke:
Lieferzeit 10-14 Tag (e)
2500+0.79 EUR
Mindestbestellmenge: 2500
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2ED2108S06FXUMA1 2ED2108S06FXUMA1 Infineon Technologies Infineon-2ED2108-4-S06F-J-DataSheet-v02_10-EN.pdf?fileId=5546d4626cb27db2016cb8d752c029ef Description: IC GATE DRVR HALF-BRIDGE 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 650 V
Supplier Device Package: PG-DSO-8-53
Rise / Fall Time (Typ): 100ns, 35ns
Channel Type: Synchronous
Driven Configuration: Half-Bridge
Number of Drivers: 1
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 1.1V, 1.7V
Current - Peak Output (Source, Sink): 290mA, 700mA
Part Status: Active
DigiKey Programmable: Not Verified
auf Bestellung 12186 Stücke:
Lieferzeit 10-14 Tag (e)
10+1.85 EUR
14+1.33 EUR
25+1.2 EUR
100+1.06 EUR
250+1 EUR
500+0.96 EUR
1000+0.92 EUR
Mindestbestellmenge: 10
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2ED21084S06JXUMA1 2ED21084S06JXUMA1 Infineon Technologies Infineon-2ED2108-4-S06F-J-DataSheet-v02_10-EN.pdf?fileId=5546d4626cb27db2016cb8d752c029ef Description: IC HALF BRIDGE GATE DRIVER 650V
Packaging: Tape & Reel (TR)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 650 V
Supplier Device Package: PG-DSO-14-49
Rise / Fall Time (Typ): 100ns, 35ns
Channel Type: Synchronous
Driven Configuration: Half-Bridge
Number of Drivers: 1
Gate Type: IGBT, N-Channel MOSFET
Logic Voltage - VIL, VIH: 1.1V, 1.7V
Current - Peak Output (Source, Sink): 290mA, 700mA
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
2ED21084S06JXUMA1 2ED21084S06JXUMA1 Infineon Technologies Infineon-2ED2108-4-S06F-J-DataSheet-v02_10-EN.pdf?fileId=5546d4626cb27db2016cb8d752c029ef Description: IC HALF BRIDGE GATE DRIVER 650V
Packaging: Cut Tape (CT)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 650 V
Supplier Device Package: PG-DSO-14-49
Rise / Fall Time (Typ): 100ns, 35ns
Channel Type: Synchronous
Driven Configuration: Half-Bridge
Number of Drivers: 1
Gate Type: IGBT, N-Channel MOSFET
Logic Voltage - VIL, VIH: 1.1V, 1.7V
Current - Peak Output (Source, Sink): 290mA, 700mA
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
2ED21094S06JXUMA1 2ED21094S06JXUMA1 Infineon Technologies Infineon-2ED2109-4-S06F-J-DataSheet-v02_00-EN.pdf?fileId=5546d4626cb27db2016cb8d7493e29eb Description: IC GATE DRVR HALF-BRIDGE 14SOIC
Packaging: Tape & Reel (TR)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 650 V
Supplier Device Package: PG-DSO-14-49
Rise / Fall Time (Typ): 100ns, 35ns
Channel Type: Synchronous
Driven Configuration: Half-Bridge
Number of Drivers: 1
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 1.1V, 1.7V
Current - Peak Output (Source, Sink): 290mA, 700mA
Part Status: Active
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
2ED21094S06JXUMA1 2ED21094S06JXUMA1 Infineon Technologies Infineon-2ED2109-4-S06F-J-DataSheet-v02_00-EN.pdf?fileId=5546d4626cb27db2016cb8d7493e29eb Description: IC GATE DRVR HALF-BRIDGE 14SOIC
Packaging: Cut Tape (CT)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 650 V
Supplier Device Package: PG-DSO-14-49
Rise / Fall Time (Typ): 100ns, 35ns
Channel Type: Synchronous
Driven Configuration: Half-Bridge
Number of Drivers: 1
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 1.1V, 1.7V
Current - Peak Output (Source, Sink): 290mA, 700mA
Part Status: Active
DigiKey Programmable: Not Verified
auf Bestellung 1988 Stücke:
Lieferzeit 10-14 Tag (e)
8+2.46 EUR
10+1.8 EUR
25+1.64 EUR
100+1.45 EUR
250+1.37 EUR
500+1.32 EUR
1000+1.27 EUR
Mindestbestellmenge: 8
Im Einkaufswagen  Stück im Wert von  UAH
SPP07N65C3IN SPP07N65C3IN Infineon Technologies Infineon-SPP_A_I07N65C3-DS-v01_91-en.pdf?fileId=db3a304412b407950112b42ea7e74a0b Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.3A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 4.6A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 350µA
Supplier Device Package: PG-TO220-3-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 790 pF @ 25 V
Produkt ist nicht verfügbar
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IRF7420TRPBF irf7420pbf.pdf?fileId=5546d462533600a4015355fade041bcc
IRF7420TRPBF
Hersteller: Infineon Technologies
Description: MOSFET P-CH 12V 11.5A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 11.5A (Tc)
Rds On (Max) @ Id, Vgs: 14mOhm @ 11.5A, 4.5V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: 8-SO
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 3529 pF @ 10 V
Produkt ist nicht verfügbar
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IRF7420 irf7420pbf.pdf?fileId=5546d462533600a4015355fade041bcc
IRF7420
Hersteller: Infineon Technologies
Description: MOSFET P-CH 12V 11.5A 8SO
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 11.5A (Tc)
Rds On (Max) @ Id, Vgs: 14mOhm @ 11.5A, 4.5V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: 8-SO
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 3529 pF @ 10 V
Produkt ist nicht verfügbar
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IRF7420TR irf7420pbf.pdf?fileId=5546d462533600a4015355fade041bcc
IRF7420TR
Hersteller: Infineon Technologies
Description: MOSFET P-CH 12V 11.5A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 11.5A (Tc)
Rds On (Max) @ Id, Vgs: 14mOhm @ 11.5A, 4.5V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: 8-SO
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 3529 pF @ 10 V
Produkt ist nicht verfügbar
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IPA50R140CPXK INFN-S-A0004583226-1.pdf?t.download=true&u=5oefqw
Hersteller: Infineon Technologies
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 23A (Tc)
Rds On (Max) @ Id, Vgs: 140mOhm @ 14A, 10V
Power Dissipation (Max): 34W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 930µA
Supplier Device Package: PG-TO220-3-111
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2540 pF @ 100 V
Produkt ist nicht verfügbar
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TLE94108ELXUMA1 Infineon-TLE94108EL-DS-v01_00-EN.pdf?fileId=5546d462576f347501579a157dc07d16
TLE94108ELXUMA1
Hersteller: Infineon Technologies
Description: IC HALF BRIDGE DRVR 500MA 24SSOP
Packaging: Tape & Reel (TR)
Package / Case: 24-LSSOP (0.154", 3.90mm Width) Exposed Pad
Mounting Type: Surface Mount
Interface: SPI
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge (8)
Voltage - Supply: 3V ~ 5.5V
Rds On (Typ): 850mOhm LS, 850mOhm HS
Applications: AC Motors, DC Motors, General Purpose
Current - Output / Channel: 500mA
Current - Peak Output: 2A
Technology: Power MOSFET
Voltage - Load: 5.5V ~ 20V
Supplier Device Package: PG-SSOP-24-4
Fault Protection: Over Temperature, Short Circuit, UVLO
Load Type: Inductive
Part Status: Not For New Designs
Produkt ist nicht verfügbar
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TLE94108ELXUMA1 Infineon-TLE94108EL-DS-v01_00-EN.pdf?fileId=5546d462576f347501579a157dc07d16
TLE94108ELXUMA1
Hersteller: Infineon Technologies
Description: IC HALF BRIDGE DRVR 500MA 24SSOP
Packaging: Cut Tape (CT)
Package / Case: 24-LSSOP (0.154", 3.90mm Width) Exposed Pad
Mounting Type: Surface Mount
Interface: SPI
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge (8)
Voltage - Supply: 3V ~ 5.5V
Rds On (Typ): 850mOhm LS, 850mOhm HS
Applications: AC Motors, DC Motors, General Purpose
Current - Output / Channel: 500mA
Current - Peak Output: 2A
Technology: Power MOSFET
Voltage - Load: 5.5V ~ 20V
Supplier Device Package: PG-SSOP-24-4
Fault Protection: Over Temperature, Short Circuit, UVLO
Load Type: Inductive
Part Status: Not For New Designs
Produkt ist nicht verfügbar
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TLE94110ELXUMA1 Infineon-TLE94110EL-DS-v01_00-EN.pdf?fileId=5546d462576f347501579a278c3f7d3b
TLE94110ELXUMA1
Hersteller: Infineon Technologies
Description: IC HALF BRIDGE DRVR 500MA 24SSOP
Packaging: Cut Tape (CT)
Package / Case: 24-LSSOP (0.154", 3.90mm Width) Exposed Pad
Mounting Type: Surface Mount
Interface: SPI
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge (10)
Voltage - Supply: 3V ~ 5.5V
Rds On (Typ): 850mOhm LS, 850mOhm HS
Applications: AC Motors, DC Motors, General Purpose
Current - Output / Channel: 500mA
Current - Peak Output: 2A
Technology: Power MOSFET
Voltage - Load: 5.5V ~ 20V
Supplier Device Package: PG-SSOP-24-4
Fault Protection: Over Temperature, Short Circuit, UVLO
Load Type: Inductive
Part Status: Not For New Designs
Produkt ist nicht verfügbar
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XC8662FRA5VBEAXUMA1 Infineon-SAA_XC866-DS-v01_05-en.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a30431689f442011690d942dc0119&ack=t
XC8662FRA5VBEAXUMA1
Hersteller: Infineon Technologies
Description: IC MCU 8BIT 8KB FLASH 38TSSOP
Packaging: Cut Tape (CT)
Package / Case: 38-TFSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Speed: 86MHz
Program Memory Size: 8KB (8K x 8)
RAM Size: 768 x 8
Operating Temperature: -40°C ~ 140°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: XC800
Data Converters: A/D 8x10b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 2.3V ~ 5.5V
Connectivity: SSI, UART/USART
Peripherals: Brown-out Detect/Reset, POR, PWM, WDT
Supplier Device Package: PG-TSSOP-38
Part Status: Discontinued at Digi-Key
Number of I/O: 27
Produkt ist nicht verfügbar
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BCP68E6327 INFNS07783-1.pdf?t.download=true&u=5oefqw
BCP68E6327
Hersteller: Infineon Technologies
Description: POWER BIPOLAR TRANSISTOR
Packaging: Bulk
Part Status: Active
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4261+0.11 EUR
Mindestbestellmenge: 4261
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BGA711N7E6327XTSA1 BGA711N7.pdf
BGA711N7E6327XTSA1
Hersteller: Infineon Technologies
Description: IC AMP 1.8GHZ-2.7GHZ TSNP7-1
Packaging: Bulk
Package / Case: 6-XFDFN Exposed Pad
Mounting Type: Surface Mount
Frequency: 1.8GHz ~ 2.7GHz
Voltage - Supply: 3.6V
Gain: 17dB
Current - Supply: 10mA
Noise Figure: 1.1dB
P1dB: -8dBm
Supplier Device Package: PG-TSNP-7-1
auf Bestellung 105000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
609+0.73 EUR
Mindestbestellmenge: 609
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BGA711L7E6327
Hersteller: Infineon Technologies
Description: IC AMP GPS 400MHZ-6GHZ TSLP7-8
Packaging: Bulk
Package / Case: 6-XFDFN Exposed Pad
Mounting Type: Surface Mount
Frequency: 400MHz ~ 6GHz
RF Type: General Purpose
Voltage - Supply: 2.75V
Gain: 21.5dB
Current - Supply: 5.8mA
Noise Figure: 0.75dB
P1dB: -20.5dBm
Test Frequency: 1575.42MHz
Supplier Device Package: PG-TSLP-7-8
Part Status: Active
auf Bestellung 34989 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
799+0.61 EUR
Mindestbestellmenge: 799
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PMA7110 INFNS17057-1.pdf?t.download=true&u=5oefqw
Hersteller: Infineon Technologies
Description: 8-BIT FLASH MCU, 8051 CPU, 12MHZ
Packaging: Bulk
Package / Case: 38-TFSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Frequency: 315MHz, 434MHz, 868MHz, 915MHz
Memory Size: 6kB Flash, 12kB ROM, 256B RAM
Type: TxRx + MCU
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.9V ~ 3.6V
Power - Output: 10dBm
Data Rate (Max): 32kbps
Current - Transmitting: 8.9mA ~ 17.1mA
Supplier Device Package: PG-TSSOP-38
GPIO: 10
Modulation: ASK, FSK
RF Family/Standard: General ISM < 1GHz
Serial Interfaces: I²C, SPI
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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BSS88 INFNS23727-1.pdf?t.download=true&u=5oefqw
BSS88
Hersteller: Infineon Technologies
Description: N-CHANNEL ENHANCEMENT IGBT
Packaging: Bulk
Part Status: Active
Produkt ist nicht verfügbar
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BSC061N08NS5ATMA1 Infineon-BSC061N08NS5-DS-v02_00-EN.pdf?fileId=5546d4624ad04ef9014ae3ab1bb62b69
BSC061N08NS5ATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 80V 82A TDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 82A (Tc)
Rds On (Max) @ Id, Vgs: 6.1mOhm @ 41A, 10V
Power Dissipation (Max): 2.5W (Ta), 74W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 41µA
Supplier Device Package: PG-TDSON-8-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 40 V
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5000+1.23 EUR
Mindestbestellmenge: 5000
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BSC061N08NS5ATMA1 Infineon-BSC061N08NS5-DS-v02_00-EN.pdf?fileId=5546d4624ad04ef9014ae3ab1bb62b69
BSC061N08NS5ATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 80V 82A TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 82A (Tc)
Rds On (Max) @ Id, Vgs: 6.1mOhm @ 41A, 10V
Power Dissipation (Max): 2.5W (Ta), 74W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 41µA
Supplier Device Package: PG-TDSON-8-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 40 V
auf Bestellung 7302 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
6+3.08 EUR
10+2.26 EUR
100+1.73 EUR
500+1.39 EUR
1000+1.38 EUR
Mindestbestellmenge: 6
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S25FS512SDSMFI011 Infineon-S25FS512S_512_Mb_1.8_V_Serial_Peripheral_Interface_with_Multi-I_O_Non-Volatile_Flash-DataSheet-v14_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed681a356fe&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en
S25FS512SDSMFI011
Hersteller: Infineon Technologies
Description: IC FLASH 512MBIT SPI/QUAD 16SOIC
Packaging: Tube
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 2V
Technology: FLASH - NOR
Clock Frequency: 80 MHz
Memory Format: FLASH
Supplier Device Package: 16-SOIC
Part Status: Active
Memory Interface: SPI - Quad I/O, QPI
Memory Organization: 64M x 8
DigiKey Programmable: Not Verified
auf Bestellung 222 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+15.98 EUR
10+14.19 EUR
47+13.1 EUR
94+12.63 EUR
141+12.37 EUR
Mindestbestellmenge: 2
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BAT60AE6327 INFNS11560-1.pdf?t.download=true&u=5oefqw
BAT60AE6327
Hersteller: Infineon Technologies
Description: RECTIFIER DIODE, SCHOTTKY
Packaging: Bulk
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 20pF @ 5V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: PG-SOD323-2-1
Operating Temperature - Junction: 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 10 V
Voltage - Forward (Vf) (Max) @ If: 370 mV @ 1 A
Current - Reverse Leakage @ Vr: 2.6 mA @ 8 V
Produkt ist nicht verfügbar
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IR21824 ir2181.pdf?fileId=5546d462533600a4015355c93cdd16ce
IR21824
Hersteller: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 14DIP
Packaging: Tube
Package / Case: 14-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 14-DIP
Rise / Fall Time (Typ): 40ns, 20ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.7V
Current - Peak Output (Source, Sink): 1.9A, 2.3A
Part Status: Obsolete
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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IR21824S ir2181.pdf?fileId=5546d462533600a4015355c93cdd16ce
IR21824S
Hersteller: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 14SOIC
Packaging: Tube
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 14-SOIC
Rise / Fall Time (Typ): 40ns, 20ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.7V
Current - Peak Output (Source, Sink): 1.9A, 2.3A
Part Status: Obsolete
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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IR2182 ir2181.pdf?fileId=5546d462533600a4015355c93cdd16ce
IR2182
Hersteller: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-PDIP
Rise / Fall Time (Typ): 40ns, 20ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.7V
Current - Peak Output (Source, Sink): 1.9A, 2.3A
Part Status: Obsolete
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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IR2182S ir2181.pdf?fileId=5546d462533600a4015355c93cdd16ce
IR2182S
Hersteller: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 40ns, 20ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.7V
Current - Peak Output (Source, Sink): 1.9A, 2.3A
Part Status: Obsolete
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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SPI15N65C3 Infineon-SPI15N65C3-DS-v02_00-en.pdf?fileId=db3a30431689f4420116d3acc8fe0c5a
SPI15N65C3
Hersteller: Infineon Technologies
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 9.4A, 10V
Power Dissipation (Max): 156W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 675µA
Supplier Device Package: PG-TO262-3-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 25 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 25
auf Bestellung 400 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
166+2.9 EUR
Mindestbestellmenge: 166
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TLE4941PLUSCAAMA1 Infineon-TLE4941plusC_PB-PB-v01_01-EN.PDF?fileId=5546d4625607bd1301560cafae653a04&ack=t
TLE4941PLUSCAAMA1
Hersteller: Infineon Technologies
Description: MAG SWITCH SPEC PURP SSO-2-53
Packaging: Tape & Box (TB)
Package / Case: 2-SIP, SSO-2-53
Output Type: Current Source
Mounting Type: Through Hole
Function: Special Purpose
Voltage - Supply: 4.5V ~ 20V
Technology: Hall Effect
Current - Supply (Max): 16.8mA
Supplier Device Package: PG-SSO-2-53
Grade: Automotive
Qualification: AEC-Q100
Produkt ist nicht verfügbar
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CY14V101NA-BA45XI download
CY14V101NA-BA45XI
Hersteller: Infineon Technologies
Description: IC NVSRAM 1MBIT PARALLEL 48FBGA
Packaging: Tray
Package / Case: 48-TFBGA
Mounting Type: Surface Mount
Memory Size: 1Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: NVSRAM (Non-Volatile SRAM)
Memory Format: NVSRAM
Supplier Device Package: 48-FBGA (6x10)
Part Status: Active
Write Cycle Time - Word, Page: 45ns
Memory Interface: Parallel
Access Time: 45 ns
Memory Organization: 64K x 16
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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IRFH5025TRPBF irfh5025pbf.pdf?fileId=5546d462533600a40153561acde51ea0
IRFH5025TRPBF
Hersteller: Infineon Technologies
Description: MOSFET N-CH 250V 3.8A 8PQFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.8A (Ta)
Rds On (Max) @ Id, Vgs: 100mOhm @ 5.7A, 10V
Power Dissipation (Max): 3.6W (Ta), 8.3W (Tc)
Vgs(th) (Max) @ Id: 5V @ 150µA
Supplier Device Package: 8-PQFN (5x6)
Part Status: Last Time Buy
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2150 pF @ 50 V
Produkt ist nicht verfügbar
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IRFH5025TRPBF irfh5025pbf.pdf?fileId=5546d462533600a40153561acde51ea0
IRFH5025TRPBF
Hersteller: Infineon Technologies
Description: MOSFET N-CH 250V 3.8A 8PQFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.8A (Ta)
Rds On (Max) @ Id, Vgs: 100mOhm @ 5.7A, 10V
Power Dissipation (Max): 3.6W (Ta), 8.3W (Tc)
Vgs(th) (Max) @ Id: 5V @ 150µA
Supplier Device Package: 8-PQFN (5x6)
Part Status: Last Time Buy
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2150 pF @ 50 V
auf Bestellung 366 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+5.58 EUR
10+4.69 EUR
100+3.79 EUR
Mindestbestellmenge: 4
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TD285N16KOFHPSA2 Infineon-TT285N16KOF-DS-v03_04-EN.pdf?fileId=db3a304412b407950112b42f7b4d4bc5
TD285N16KOFHPSA2
Hersteller: Infineon Technologies
Description: SCR MODULE 1600V 520A MODULE
Produkt ist nicht verfügbar
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IPF13N03LAG INFNS11986-1.pdf?t.download=true&u=5oefqw
Hersteller: Infineon Technologies
Description: N-CHANNEL POWER MOSFET
auf Bestellung 25000 Stücke:
Lieferzeit 10-14 Tag (e)
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IPP13N03LB G IPP13N03LB_G.pdf
IPP13N03LB G
Hersteller: Infineon Technologies
Description: MOSFET N-CH 30V 30A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 12.8mOhm @ 30A, 10V
Power Dissipation (Max): 52W (Tc)
Vgs(th) (Max) @ Id: 2V @ 20µA
Supplier Device Package: PG-TO220-3-1
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1355 pF @ 15 V
Produkt ist nicht verfügbar
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IPS13N03LA G ipd13n03la_rev2.1_g.pdf
IPS13N03LA G
Hersteller: Infineon Technologies
Description: MOSFET N-CH 25V 30A TO251-3
Packaging: Tube
Package / Case: TO-251-3 Stub Leads, IPak
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 12.8mOhm @ 30A, 10V
Power Dissipation (Max): 46W (Tc)
Vgs(th) (Max) @ Id: 2V @ 20µA
Supplier Device Package: PG-TO251-3-11
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 8.3 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1043 pF @ 15 V
Produkt ist nicht verfügbar
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BTT60302ERAXUMA1 Infineon-BTT6030-2ERA-DS-v01_00-EN.pdf?fileId=5546d46269e1c019016a21fa44260d82
BTT60302ERAXUMA1
Hersteller: Infineon Technologies
Description: IC PWR SWITCH N-CHAN 1:1 TDSO-14
Packaging: Cut Tape (CT)
Package / Case: 14-SOIC (0.154", 3.90mm Width) Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 2
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 32mOhm
Input Type: Non-Inverting
Voltage - Load: 5V ~ 36V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 4A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-TDSO-14-31
Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, Over Voltage
Part Status: Active
Grade: Automotive
Qualification: AEC-Q100
auf Bestellung 6744 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+5.83 EUR
10+4.39 EUR
25+4.04 EUR
100+3.65 EUR
250+3.46 EUR
500+3.35 EUR
1000+3.25 EUR
Mindestbestellmenge: 4
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IPB027N10N5ATMA1 Infineon-IPB027N10N5-DS-v02_01-EN.pdf?fileId=5546d4624ad04ef9014adf44f3dd7c86
IPB027N10N5ATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 100V 120A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 2.7mOhm @ 100A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 184µA
Supplier Device Package: PG-TO263-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 139 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10300 pF @ 50 V
auf Bestellung 4015 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+8.03 EUR
10+5.34 EUR
100+3.82 EUR
500+3.66 EUR
Mindestbestellmenge: 3
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FP75R12KT4B16BOSA1 Infineon-FP75R12KT4-DS-v03_00-CN.pdf?fileId=db3a30433dd58def013dd99b7db3181f
FP75R12KT4B16BOSA1
Hersteller: Infineon Technologies
Description: IGBT MOD 1200V 150A 385W MOD
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Three Phase Bridge Rectifier
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.25V @ 15V, 75A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 150 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 385 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 4.3 nF @ 25 V
auf Bestellung 15 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+146.48 EUR
10+120.22 EUR
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FP75R12KT4PBPSA1 Infineon-FP75R12KT4P-DS-v03_00-EN.pdf?fileId=5546d4625b3ca4ec015b57eb5fec0401
FP75R12KT4PBPSA1
Hersteller: Infineon Technologies
Description: IGBT MODULE 1200V 150A MODULE
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Three Phase Bridge Rectifier
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 75A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 150 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 4.3 nF @ 25 V
Produkt ist nicht verfügbar
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IPA65R600C6 INFNS28015-1.pdf?t.download=true&u=5oefqw
Hersteller: Infineon Technologies
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.3A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 2.1A, 10V
Power Dissipation (Max): 28W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 210µA
Supplier Device Package: PG-TO220-3-111
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 440 pF @ 100 V
Produkt ist nicht verfügbar
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IPA65R660CFDXKSA2 Infineon-IPA65R660CFD-DataSheet-v02_07-EN.pdf?fileId=5546d462727878c201727e85f6c15b38
IPA65R660CFDXKSA2
Hersteller: Infineon Technologies
Description: MOSFET N-CH 700V 6A TO220
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 660mOhm @ 2.1A, 10V
Power Dissipation (Max): 27.8W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 200µA
Supplier Device Package: PG-TO220 Full Pack
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 615 pF @ 100 V
Produkt ist nicht verfügbar
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IPA65R099C6XKSA1 IPx65R099C6.pdf
IPA65R099C6XKSA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 650V 38A TO220
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 38A (Tc)
Rds On (Max) @ Id, Vgs: 99mOhm @ 12.8A, 10V
Power Dissipation (Max): 35W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 1.2mA
Supplier Device Package: PG-TO220-3-111
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 127 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2780 pF @ 100 V
Produkt ist nicht verfügbar
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IRL3714TR Part_Number_Guide_Web.pdf
IRL3714TR
Hersteller: Infineon Technologies
Description: MOSFET N-CH 20V 36A TO220AB
Packaging: Tape & Reel (TR)
Package / Case: TO-220-3
Mounting Type: Through Hole
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ 18A, 10V
Power Dissipation (Max): 47W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 9.7 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 670 pF @ 10 V
Produkt ist nicht verfügbar
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IRL3715TR irl3715.pdf
IRL3715TR
Hersteller: Infineon Technologies
Description: MOSFET N-CH 20V 54A TO220AB
Produkt ist nicht verfügbar
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IRL3715TRL irl3715.pdf
IRL3715TRL
Hersteller: Infineon Technologies
Description: MOSFET N-CH 20V 54A TO220AB
Produkt ist nicht verfügbar
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IRL3715TRR irl3715.pdf
IRL3715TRR
Hersteller: Infineon Technologies
Description: MOSFET N-CH 20V 54A TO220AB
Produkt ist nicht verfügbar
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BC848B-E6327 INFNS14907-1.pdf?t.download=true&u=5oefqw
BC848B-E6327
Hersteller: Infineon Technologies
Description: TRANS NPN 30V 0.1A SOT23
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
Frequency - Transition: 250MHz
Supplier Device Package: PG-SOT23
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 330 mW
Produkt ist nicht verfügbar
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BC846SE6327 INFNS17743-1.pdf?t.download=true&u=5oefqw
BC846SE6327
Hersteller: Infineon Technologies
Description: BIPOLAR GEN PURPOSE TRANSISTOR
Packaging: Bulk
Package / Case: 6-VSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 NPN (Dual)
Operating Temperature: 150°C (TJ)
Power - Max: 250mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 65V
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
Frequency - Transition: 250MHz
Supplier Device Package: PG-SOT363-6-1
Part Status: Active
Produkt ist nicht verfügbar
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BCR133WH6327 INFNS17147-1.pdf?t.download=true&u=5oefqw
BCR133WH6327
Hersteller: Infineon Technologies
Description: BIPOLAR DIGITAL TRANSISTOR
Packaging: Bulk
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V
Supplier Device Package: PG-SOT323-3-1
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 250 mW
Frequency - Transition: 130 MHz
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Produkt ist nicht verfügbar
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BCR133WE6327 INFNS11633-1.pdf?t.download=true&u=5oefqw
BCR133WE6327
Hersteller: Infineon Technologies
Description: BIPOLAR DIGITAL TRANSISTOR
Packaging: Bulk
Part Status: Active
Produkt ist nicht verfügbar
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XMC1301T016F0008AAXUMA1 XMC1300.pdf
XMC1301T016F0008AAXUMA1
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 8KB FLASH 16TSSOP
Packaging: Bulk
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Speed: 32MHz
Program Memory Size: 8KB (8K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: A/D 11x12b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V
Connectivity: I2C, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, I2S, POR, PWM, WDT
Supplier Device Package: PG-TSSOP-16-8
Part Status: Obsolete
Number of I/O: 11
DigiKey Programmable: Not Verified
auf Bestellung 8500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
371+1.22 EUR
Mindestbestellmenge: 371
Im Einkaufswagen  Stück im Wert von  UAH
XMC1100T016X0016AAXUMA1 XMC1100.pdf
XMC1100T016X0016AAXUMA1
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 16KB FLASH 16TSSOP
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
2ED2109S06FXUMA1 Infineon-2ED2109-4-S06F-J-DataSheet-v02_00-EN.pdf?fileId=5546d4626cb27db2016cb8d7493e29eb
2ED2109S06FXUMA1
Hersteller: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 650 V
Supplier Device Package: PG-DSO-8-53
Rise / Fall Time (Typ): 100ns, 35ns
Channel Type: Synchronous
Driven Configuration: Half-Bridge
Number of Drivers: 1
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 1.1V, 1.7V
Current - Peak Output (Source, Sink): 290mA, 700mA
Part Status: Active
DigiKey Programmable: Not Verified
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2500+0.87 EUR
Mindestbestellmenge: 2500
Im Einkaufswagen  Stück im Wert von  UAH
2ED2109S06FXUMA1 Infineon-2ED2109-4-S06F-J-DataSheet-v02_00-EN.pdf?fileId=5546d4626cb27db2016cb8d7493e29eb
2ED2109S06FXUMA1
Hersteller: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 650 V
Supplier Device Package: PG-DSO-8-53
Rise / Fall Time (Typ): 100ns, 35ns
Channel Type: Synchronous
Driven Configuration: Half-Bridge
Number of Drivers: 1
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 1.1V, 1.7V
Current - Peak Output (Source, Sink): 290mA, 700mA
Part Status: Active
DigiKey Programmable: Not Verified
auf Bestellung 3665 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
10+1.81 EUR
14+1.31 EUR
25+1.18 EUR
100+1.05 EUR
250+0.98 EUR
500+0.94 EUR
1000+0.91 EUR
Mindestbestellmenge: 10
Im Einkaufswagen  Stück im Wert von  UAH
2ED21064S06JXUMA1 Infineon-2ED2106-4-S06F-J-DataSheet-v02_10-EN.pdf?fileId=5546d4626cb27db2016cb8d7402029e7
2ED21064S06JXUMA1
Hersteller: Infineon Technologies
Description: IC GATE DRVR HI/LOW SIDE 14SOIC
Packaging: Tape & Reel (TR)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 10V ~ 20V
High Side Voltage - Max (Bootstrap): 20 V
Supplier Device Package: PG-DSO-14
Rise / Fall Time (Typ): 100ns, 35ns
Channel Type: Independent
Driven Configuration: High-Side and Low-Side
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 1.1V, 1.7V
Current - Peak Output (Source, Sink): 290mA, 700mA
Part Status: Active
DigiKey Programmable: Not Verified
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2500+1.36 EUR
Mindestbestellmenge: 2500
Im Einkaufswagen  Stück im Wert von  UAH
2ED21064S06JXUMA1 Infineon-2ED2106-4-S06F-J-DataSheet-v02_10-EN.pdf?fileId=5546d4626cb27db2016cb8d7402029e7
2ED21064S06JXUMA1
Hersteller: Infineon Technologies
Description: IC GATE DRVR HI/LOW SIDE 14SOIC
Packaging: Cut Tape (CT)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 10V ~ 20V
High Side Voltage - Max (Bootstrap): 20 V
Supplier Device Package: PG-DSO-14
Rise / Fall Time (Typ): 100ns, 35ns
Channel Type: Independent
Driven Configuration: High-Side and Low-Side
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 1.1V, 1.7V
Current - Peak Output (Source, Sink): 290mA, 700mA
Part Status: Active
DigiKey Programmable: Not Verified
auf Bestellung 4994 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
7+2.73 EUR
10+2 EUR
25+1.81 EUR
100+1.61 EUR
250+1.52 EUR
500+1.46 EUR
1000+1.41 EUR
Mindestbestellmenge: 7
Im Einkaufswagen  Stück im Wert von  UAH
2ED21091S06FXUMA1 Infineon-2ED21091S06F-DataSheet-v02_10-EN.pdf?fileId=5546d4626cb27db2016cb8d7765529ff
2ED21091S06FXUMA1
Hersteller: Infineon Technologies
Description: IC GATE DRVR HI/LOW SIDE 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 10V ~ 20V
High Side Voltage - Max (Bootstrap): 675 V
Supplier Device Package: PG-DSO-8
Rise / Fall Time (Typ): 100ns, 35ns
Channel Type: Independent
Driven Configuration: High-Side and Low-Side
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 1.1V, 1.7V
Current - Peak Output (Source, Sink): 290mA, 700mA
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
2ED21091S06FXUMA1 Infineon-2ED21091S06F-DataSheet-v02_10-EN.pdf?fileId=5546d4626cb27db2016cb8d7765529ff
2ED21091S06FXUMA1
Hersteller: Infineon Technologies
Description: IC GATE DRVR HI/LOW SIDE 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 10V ~ 20V
High Side Voltage - Max (Bootstrap): 675 V
Supplier Device Package: PG-DSO-8
Rise / Fall Time (Typ): 100ns, 35ns
Channel Type: Independent
Driven Configuration: High-Side and Low-Side
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 1.1V, 1.7V
Current - Peak Output (Source, Sink): 290mA, 700mA
DigiKey Programmable: Not Verified
auf Bestellung 2430 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
10+1.85 EUR
14+1.33 EUR
25+1.2 EUR
100+1.06 EUR
250+1 EUR
500+0.96 EUR
1000+0.92 EUR
Mindestbestellmenge: 10
Im Einkaufswagen  Stück im Wert von  UAH
2ED2108S06FXUMA1 Infineon-2ED2108-4-S06F-J-DataSheet-v02_10-EN.pdf?fileId=5546d4626cb27db2016cb8d752c029ef
2ED2108S06FXUMA1
Hersteller: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 650 V
Supplier Device Package: PG-DSO-8-53
Rise / Fall Time (Typ): 100ns, 35ns
Channel Type: Synchronous
Driven Configuration: Half-Bridge
Number of Drivers: 1
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 1.1V, 1.7V
Current - Peak Output (Source, Sink): 290mA, 700mA
Part Status: Active
DigiKey Programmable: Not Verified
auf Bestellung 7500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2500+0.79 EUR
Mindestbestellmenge: 2500
Im Einkaufswagen  Stück im Wert von  UAH
2ED2108S06FXUMA1 Infineon-2ED2108-4-S06F-J-DataSheet-v02_10-EN.pdf?fileId=5546d4626cb27db2016cb8d752c029ef
2ED2108S06FXUMA1
Hersteller: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 650 V
Supplier Device Package: PG-DSO-8-53
Rise / Fall Time (Typ): 100ns, 35ns
Channel Type: Synchronous
Driven Configuration: Half-Bridge
Number of Drivers: 1
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 1.1V, 1.7V
Current - Peak Output (Source, Sink): 290mA, 700mA
Part Status: Active
DigiKey Programmable: Not Verified
auf Bestellung 12186 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
10+1.85 EUR
14+1.33 EUR
25+1.2 EUR
100+1.06 EUR
250+1 EUR
500+0.96 EUR
1000+0.92 EUR
Mindestbestellmenge: 10
Im Einkaufswagen  Stück im Wert von  UAH
2ED21084S06JXUMA1 Infineon-2ED2108-4-S06F-J-DataSheet-v02_10-EN.pdf?fileId=5546d4626cb27db2016cb8d752c029ef
2ED21084S06JXUMA1
Hersteller: Infineon Technologies
Description: IC HALF BRIDGE GATE DRIVER 650V
Packaging: Tape & Reel (TR)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 650 V
Supplier Device Package: PG-DSO-14-49
Rise / Fall Time (Typ): 100ns, 35ns
Channel Type: Synchronous
Driven Configuration: Half-Bridge
Number of Drivers: 1
Gate Type: IGBT, N-Channel MOSFET
Logic Voltage - VIL, VIH: 1.1V, 1.7V
Current - Peak Output (Source, Sink): 290mA, 700mA
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
2ED21084S06JXUMA1 Infineon-2ED2108-4-S06F-J-DataSheet-v02_10-EN.pdf?fileId=5546d4626cb27db2016cb8d752c029ef
2ED21084S06JXUMA1
Hersteller: Infineon Technologies
Description: IC HALF BRIDGE GATE DRIVER 650V
Packaging: Cut Tape (CT)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 650 V
Supplier Device Package: PG-DSO-14-49
Rise / Fall Time (Typ): 100ns, 35ns
Channel Type: Synchronous
Driven Configuration: Half-Bridge
Number of Drivers: 1
Gate Type: IGBT, N-Channel MOSFET
Logic Voltage - VIL, VIH: 1.1V, 1.7V
Current - Peak Output (Source, Sink): 290mA, 700mA
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
2ED21094S06JXUMA1 Infineon-2ED2109-4-S06F-J-DataSheet-v02_00-EN.pdf?fileId=5546d4626cb27db2016cb8d7493e29eb
2ED21094S06JXUMA1
Hersteller: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 14SOIC
Packaging: Tape & Reel (TR)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 650 V
Supplier Device Package: PG-DSO-14-49
Rise / Fall Time (Typ): 100ns, 35ns
Channel Type: Synchronous
Driven Configuration: Half-Bridge
Number of Drivers: 1
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 1.1V, 1.7V
Current - Peak Output (Source, Sink): 290mA, 700mA
Part Status: Active
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
2ED21094S06JXUMA1 Infineon-2ED2109-4-S06F-J-DataSheet-v02_00-EN.pdf?fileId=5546d4626cb27db2016cb8d7493e29eb
2ED21094S06JXUMA1
Hersteller: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 14SOIC
Packaging: Cut Tape (CT)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 650 V
Supplier Device Package: PG-DSO-14-49
Rise / Fall Time (Typ): 100ns, 35ns
Channel Type: Synchronous
Driven Configuration: Half-Bridge
Number of Drivers: 1
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 1.1V, 1.7V
Current - Peak Output (Source, Sink): 290mA, 700mA
Part Status: Active
DigiKey Programmable: Not Verified
auf Bestellung 1988 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
8+2.46 EUR
10+1.8 EUR
25+1.64 EUR
100+1.45 EUR
250+1.37 EUR
500+1.32 EUR
1000+1.27 EUR
Mindestbestellmenge: 8
Im Einkaufswagen  Stück im Wert von  UAH
SPP07N65C3IN Infineon-SPP_A_I07N65C3-DS-v01_91-en.pdf?fileId=db3a304412b407950112b42ea7e74a0b
SPP07N65C3IN
Hersteller: Infineon Technologies
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.3A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 4.6A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 350µA
Supplier Device Package: PG-TO220-3-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 790 pF @ 25 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
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