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BB814E6327GR2 BB814E6327GR2 Infineon Technologies INFNS16375-1.pdf?t.download=true&u=5oefqw Description: VARIABLE CAPACITANCE DIODE
Part Status: Active
Supplier Device Package: PG-SOT23-3-1
Capacitance Ratio Condition: C2/C8
Q @ Vr, F: 200 @ 2V, 100MHz
Capacitance @ Vr, F: 22.7pF @ 8V, 1MHz
Operating Temperature: -55°C ~ 125°C
Diode Type: 1 Pair Common Cathode
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Bulk
Capacitance Ratio: 2.25
Voltage - Peak Reverse (Max): 18 V
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BB814E7801GR1HTSA1 BB814E7801GR1HTSA1 Infineon Technologies INFNS16375-1.pdf?t.download=true&u=5oefqw Description: VARIABLE CAPACITANCE DIODE
Capacitance Ratio: 2.25
Voltage - Peak Reverse (Max): 18 V
Part Status: Active
Supplier Device Package: PG-SOT23-3-1
Capacitance Ratio Condition: C2/C8
Q @ Vr, F: 200 @ 2V, 100MHz
Capacitance @ Vr, F: 22.7pF @ 8V, 1MHz
Operating Temperature: -55°C ~ 125°C
Diode Type: 1 Pair Common Cathode
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Bulk
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BB814E6359HTMA1 BB814E6359HTMA1 Infineon Technologies INFNS16375-1.pdf?t.download=true&u=5oefqw Description: VARIABLE CAPACITANCE DIODE
Capacitance Ratio: 2.25
Voltage - Peak Reverse (Max): 18 V
Part Status: Active
Supplier Device Package: PG-SOT23-3-1
Capacitance Ratio Condition: C2/C8
Q @ Vr, F: 200 @ 2V, 100MHz
Capacitance @ Vr, F: 22.7pF @ 8V, 1MHz
Operating Temperature: -55°C ~ 125°C
Diode Type: 1 Pair Common Cathode
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Bulk
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IPB093N04LG IPB093N04LG Infineon Technologies INFNS16287-1.pdf?t.download=true&u=5oefqw Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 9.3mOhm @ 50A, 10V
Power Dissipation (Max): 47W (Tc)
Vgs(th) (Max) @ Id: 2V @ 77µA
Supplier Device Package: PG-TO-263-3-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 20 V
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IPB097N08N3G IPB097N08N3G Infineon Technologies INFN-S-A0001299547-1.pdf?t.download=true&u=5oefqw Description: N-CHANNEL POWER MOSFET
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BTS409L1E3062ANTMA1 BTS409L1E3062ANTMA1 Infineon Technologies INFNS30248-1.pdf?t.download=true&u=5oefqw Description: AUTOMOTIVE HIGH SIDE SWITCH
Part Status: Active
Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, Over Voltage, UVLO
Supplier Device Package: PG-TO263-5-2
Ratio - Input:Output: 1:1
Current - Output (Max): 1.8A
Voltage - Supply (Vcc/Vdd): Not Required
Voltage - Load: 5V ~ 34V
Input Type: Non-Inverting
Rds On (Typ): 160mOhm
Output Configuration: High Side
Operating Temperature: -40°C ~ 150°C (TJ)
Switch Type: General Purpose
Interface: On/Off
Number of Outputs: 1
Mounting Type: Surface Mount
Output Type: N-Channel
Package / Case: TO-263-5, D²Pak (4 Leads + Tab), TO-263BB
Features: Auto Restart
Packaging: Bulk
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S29GL512T12TFVV10 S29GL512T12TFVV10 Infineon Technologies Infineon-S29GL01GT_S29GL512T_1-Gb_(128_MB)_512-Mb_(64_MB)_GL-T_MirrorBit_Eclipse_Flash-DataSheet-v13_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed2abb34fce&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_in Description: IC FLASH 512MBIT PARALLEL 56TSOP
DigiKey Programmable: Not Verified
Memory Organization: 64M x 8
Access Time: 120 ns
Memory Interface: Parallel
Write Cycle Time - Word, Page: 60ns
Part Status: Active
Supplier Device Package: 56-TSOP
Memory Format: FLASH
Technology: FLASH - NOR
Voltage - Supply: 1.65V ~ 3.6V
Operating Temperature: -40°C ~ 105°C (TA)
Mounting Type: Surface Mount
Package / Case: 56-TFSOP (0.724", 18.40mm Width)
Packaging: Tray
Memory Type: Non-Volatile
Memory Size: 512Mbit
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S29GL512T12TFVV20 S29GL512T12TFVV20 Infineon Technologies infineon-s29gl01gt-s29gl512t-1-gb-128-mb-512-mb-64-mb-gl-t-mirrorbit-eclipse-flash-datasheet-en.pdf?fileId=8ac78c8c7d0d8da4017d0ed2abb34fce Description: IC FLASH 512MBIT PARALLEL 56TSOP
DigiKey Programmable: Not Verified
Memory Organization: 64M x 8
Access Time: 120 ns
Memory Interface: Parallel
Write Cycle Time - Word, Page: 60ns
Part Status: Active
Supplier Device Package: 56-TSOP
Memory Format: FLASH
Technology: FLASH - NOR
Voltage - Supply: 1.65V ~ 3.6V
Operating Temperature: -40°C ~ 105°C (TA)
Memory Type: Non-Volatile
Memory Size: 512Mbit
Mounting Type: Surface Mount
Package / Case: 56-TFSOP (0.724", 18.40mm Width)
Packaging: Tray
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546+14.01 EUR
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S26KL512SDABHA020 S26KL512SDABHA020 Infineon Technologies Infineon-512-MB_(64_MB)_256-MB_(32_MB)_128-MB_(16_MB)_1.8_V_3.0_V_HYPERFLASH_FAMILY-DataSheet-v15_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed5ca77559f Description: IC FLASH 256MBIT HYPERBUS 24FBGA
Part Status: Active
Supplier Device Package: 24-FBGA (6x8)
Memory Format: FLASH
Clock Frequency: 100 MHz
Technology: FLASH - NOR
Voltage - Supply: 2.7V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Memory Type: Non-Volatile
Memory Size: 512Mbit
Mounting Type: Surface Mount
Package / Case: 24-VBGA
Packaging: Tray
Memory Organization: 64M x 8
Access Time: 96 ns
Memory Interface: HyperBus
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
Grade: Automotive
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CY8C4146FNI-S443T CY8C4146FNI-S443T Infineon Technologies Infineon-PSOC_4_PSOC_4100S_DATASHEET_PROGRAMMABLE_SYSTEM-ON-CHIP_(PSOC)-DataSheet-v15_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0eda5fc45c69&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Description: IC MCU 32BIT 64KB FLASH 35WLCSP
Core Processor: ARM® Cortex®-M0+
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 85°C (TA)
RAM Size: 8K x 8
Program Memory Size: 64KB (64K x 8)
Speed: 48MHz
Mounting Type: Surface Mount
Package / Case: 35-XFBGA, WLCSP
Packaging: Tape & Reel (TR)
DigiKey Programmable: Not Verified
Number of I/O: 31
Supplier Device Package: 35-WLCSP (2.11x2.6)
Peripherals: Brown-out Detect/Reset, CapSense, LCD, POR, PWM, WDT
Connectivity: I2C, IrDA, LINbus, SPI, UART/USART
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Core Size: 32-Bit Single-Core
Data Converters: A/D 16x10b Slope, 16x12b SAR; D/A 2xIDAC
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ADM6992CXABT1 ADM6992CXABT1 Infineon Technologies Description: FIBER TO FAST ETHERNET CONVERTER
DigiKey Programmable: Not Verified
Part Status: Active
Supplier Device Package: PG-TQFP-64
Standards: 10/100 Base-FX/T/TX PHY
Protocol: Ethernet
Voltage - Supply: 3.135V ~ 3.465V
Operating Temperature: 0°C ~ 115°C
Function: Switch
Package / Case: 64-LQFP
Packaging: Bulk
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PMA7106XUMA1 PMA7106XUMA1 Infineon Technologies PMA71xx.pdf Description: RF TX IC ASK 315/434MHZ 38TFSOP
Packaging: Bulk
Package / Case: 38-TFSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Frequency: 315MHz, 434MHz, 868MHz, 915MHz
Memory Size: 6KB Flash, 12KB ROM, 256 Byte RAM
Modulation or Protocol: ASK, FSK
Data Interface: PCB, Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 1.9V ~ 3.6V
Power - Output: 10dBm
Applications: Remote Control, Remote Metering
Data Rate (Max): 20kbps
Current - Transmitting: 17.1mA
Antenna Connector: PCB, Surface Mount
Supplier Device Package: PG-TSSOP-38
DigiKey Programmable: Not Verified
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SMBT3906SE6327 SMBT3906SE6327 Infineon Technologies INFNS09883-1.pdf?t.download=true&u=5oefqw Description: TRANS 2PNP DARL 40V 0.2A SOT-363
Packaging: Bulk
Package / Case: 6-VSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 PNP Darlington (Dual)
Operating Temperature: 150°C (TJ)
Power - Max: 330W
Current - Collector (Ic) (Max): 200mA
Voltage - Collector Emitter Breakdown (Max): 40V
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V
Frequency - Transition: 250MHz
Supplier Device Package: SOT-363
Part Status: Active
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SMBT3906SH6327 Infineon Technologies INFNS19373-1.pdf?t.download=true&u=5oefqw Description: SMALL SIGNAL BIPOLAR TRANSISTOR
Packaging: Bulk
Package / Case: 6-VSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V
Frequency - Transition: 250MHz
Supplier Device Package: PG-SOT363-6-1
Part Status: Active
Current - Collector (Ic) (Max): 200 mA
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 250 mW
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SMBTA92E6327 SMBTA92E6327 Infineon Technologies INFNS10822-1.pdf?t.download=true&u=5oefqw Description: SMALL SIGNAL BIPOLAR TRANSISTOR
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 2mA, 20mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 10mA, 10V
Frequency - Transition: 50MHz
Supplier Device Package: PG-SOT23-3-3
Part Status: Active
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 300 V
Power - Max: 360 mW
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SMBTA92E6433 SMBTA92E6433 Infineon Technologies INFNS10822-1.pdf?t.download=true&u=5oefqw Description: SMALL SIGNAL BIPOLAR TRANSISTOR
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 2mA, 20mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 10mA, 10V
Frequency - Transition: 50MHz
Supplier Device Package: PG-SOT23-3-3
Part Status: Active
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 300 V
Power - Max: 360 mW
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BSS80C BSS80C Infineon Technologies INFNS07914-1.pdf?t.download=true&u=5oefqw Description: SMALL SIGNAL BIPOLAR TRANSISTOR
Packaging: Bulk
Part Status: Active
Produkt ist nicht verfügbar
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TLS810C1EJV33XUMA1 TLS810C1EJV33XUMA1 Infineon Technologies Infineon-TLS810C1EJ+V33-DS-v01_10-EN.pdf?fileId=5546d46258fc0bc1015969ed915d4258 Description: IC REG LINEAR 3.3V 100MA DSO8
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 100mA
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 10 µA
Voltage - Input (Max): 42V
Number of Regulators: 1
Supplier Device Package: PG-DSO-8
Voltage - Output (Min/Fixed): 3.3V
Control Features: Reset
Grade: Automotive
PSRR: 60dB (100Hz)
Voltage Dropout (Max): 0.65V @ 100mA
Protection Features: Over Current, Over Temperature, Short Circuit
Current - Supply (Max): 15 µA
Qualification: AEC-Q100
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IRG4BC40SPBF IRG4BC40SPBF Infineon Technologies irg4bc40spbf.pdf?fileId=5546d462533600a4015356432d57229a Description: IGBT 600V 60A TO-220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.5V @ 15V, 31A
Supplier Device Package: TO-220AB
Td (on/off) @ 25°C: 22ns/650ns
Switching Energy: 450µJ (on), 6.5mJ (off)
Test Condition: 480V, 31A, 10Ohm, 15V
Gate Charge: 100 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 160 W
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SMBTA56E6433HTMA1 SMBTA56E6433HTMA1 Infineon Technologies smbta56_mmbta56.pdf?folderId=db3a304314dca389011545f4eb561884&fileId=db3a304314dca38901155fad71671d8c Description: TRANS PNP 80V 0.5A PG-SOT23
Power - Max: 330 mW
Voltage - Collector Emitter Breakdown (Max): 80 V
Current - Collector (Ic) (Max): 500 mA
Part Status: Last Time Buy
Supplier Device Package: PG-SOT23
Frequency - Transition: 100MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 1V
Current - Collector Cutoff (Max): 100nA
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Operating Temperature: 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Bulk
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SMBTA56E6327HTSA1 SMBTA56E6327HTSA1 Infineon Technologies smbta56_mmbta56.pdf?folderId=db3a304314dca389011545f4eb561884&fileId=db3a304314dca38901155fad71671d8c Description: TRANS PNP 80V 0.5A PG-SOT23
Power - Max: 330 mW
Voltage - Collector Emitter Breakdown (Max): 80 V
Current - Collector (Ic) (Max): 500 mA
Part Status: Last Time Buy
Supplier Device Package: PG-SOT23
Frequency - Transition: 100MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 1V
Current - Collector Cutoff (Max): 100nA
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Operating Temperature: 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Bulk
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SMBT2907AE6327 SMBT2907AE6327 Infineon Technologies INFNS10708-1.pdf?t.download=true&u=5oefqw Description: SMALL SIGNAL BIPOLAR TRANSISTOR
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max): 10nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Frequency - Transition: 200MHz
Supplier Device Package: PG-SOT23-3-3
Part Status: Active
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 330 mW
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SMBT3904E6327 SMBT3904E6327 Infineon Technologies INFNS11268-1.pdf?t.download=true&u=5oefqw Description: SMALL SIGNAL BIPOLAR TRANSISTOR
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SMBTA56E6433 SMBTA56E6433 Infineon Technologies INFNS11460-1.pdf?t.download=true&u=5oefqw Description: TRANS PNP 80V 0.5A SOT23
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 1V
Frequency - Transition: 100MHz
Supplier Device Package: PG-SOT23
Part Status: Active
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 330 mW
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SMBT3906E6327 SMBT3906E6327 Infineon Technologies INFNS11768-1.pdf?t.download=true&u=5oefqw Description: SMALL SIGNAL BIPOLAR TRANSISTOR
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SMBT 3904 E6433 Infineon Technologies INFNS11268-1.pdf?t.download=true&u=5oefqw Description: TRANS NPN 40V 0.2A SC74-6
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SMBTA56E6327 SMBTA56E6327 Infineon Technologies INFNS11460-1.pdf?t.download=true&u=5oefqw Description: TRANS PNP 80V 0.5A SOT23
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 1V
Frequency - Transition: 100MHz
Supplier Device Package: PG-SOT23
Part Status: Active
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 330 mW
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SMBT3904UPNE6327 SMBT3904UPNE6327 Infineon Technologies INFNS10678-1.pdf?t.download=true&u=5oefqw Description: SMALL SIGNAL BIPOLAR TRANSISTOR
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SMBT3906UE6327 Infineon Technologies INFNS09883-1.pdf?t.download=true&u=5oefqw Description: SMALL SIGNAL BIPOLAR TRANSISTOR
Packaging: Bulk
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V
Frequency - Transition: 250MHz
Supplier Device Package: PG-SC74-6-1
Part Status: Active
Current - Collector (Ic) (Max): 200 mA
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 330 mW
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SMBT3904UPNE3627 SMBT3904UPNE3627 Infineon Technologies INFNS19371-1.pdf?t.download=true&u=5oefqw Description: SMALL SIGNAL BIPOLAR TRANSISTOR
Packaging: Bulk
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Transistor Type: NPN, PNP
Operating Temperature: 150°C (TJ)
Power - Max: 330mW
Current - Collector (Ic) (Max): 200mA
Voltage - Collector Emitter Breakdown (Max): 40V
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V
Frequency - Transition: 250MHz
Supplier Device Package: PG-SC74-6
Part Status: Active
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SMBD7000E6327HTSA1 SMBD7000E6327HTSA1 Infineon Technologies smbd7000_mmbd7000series.pdf?folderId=db3a30431400ef6801141b5844e103ea&fileId=db3a30431400ef6801141c43b6f30446 Description: DIODE ARRAY GP 100V 200MA SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 200mA (DC)
Supplier Device Package: PG-SOT23
Operating Temperature - Junction: 150°C (Max)
Part Status: Last Time Buy
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 500 nA @ 100 V
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BUZ30A H3045A Infineon Technologies INFNS15132-1.pdf?t.download=true&u=5oefqw Description: N-CHANNEL POWER MOSFET
Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 25 V
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: PG-TO263-3-2
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 125W (Tc)
Rds On (Max) @ Id, Vgs: 130mOhm @ 13.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Bulk
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BUZ30AH Infineon Technologies INFNS15131-1.pdf?t.download=true&u=5oefqw Description: MOSFET N-CH 200V 21A TO220-3
Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 25 V
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): ±20V
Supplier Device Package: PG-TO220-3
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 125W (Tc)
Rds On (Max) @ Id, Vgs: 130mOhm @ 13.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Bulk
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SAK-TC1793F-512F200EFAB Infineon Technologies Description: 32-BIT RISC FLASH MCU
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ICE1PCS01XK Infineon Technologies Description: POWER FACTOR CONTROLLER
Packaging: Bulk
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BSM100GB120DN2B2HOSA1 Infineon Technologies EUPCS02845-1.pdf?t.download=true&u=5oefqw Description: IGBT MODULE
Packaging: Bulk
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IDL02G65C5XUMA1 IDL02G65C5XUMA1 Infineon Technologies Infineon-IDL02G65C5-DS-v02_00-en.pdf?fileId=db3a304342e8be2c0142ffd4f05a141d Description: DIODE SIL CARBIDE 650V 2A VSON-4
Current - Reverse Leakage @ Vr: 35 µA @ 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 2 A
Voltage - DC Reverse (Vr) (Max): 650 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: PG-VSON-4
Current - Average Rectified (Io): 2A
Capacitance @ Vr, F: 70pF @ 1V, 1MHz
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Surface Mount
Package / Case: 4-PowerTSFN
Packaging: Bulk
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IPB048N06LG IPB048N06LG Infineon Technologies INFNS16292-1.pdf?t.download=true&u=5oefqw Description: N-CHANNEL POWER MOSFET
Input Capacitance (Ciss) (Max) @ Vds: 7600 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 225 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PG-TO-263-3-2
Vgs(th) (Max) @ Id: 2V @ 270µA
Power Dissipation (Max): 300W (Tc)
Rds On (Max) @ Id, Vgs: 4.7mOhm @ 100A, 10V
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Bulk
Produkt ist nicht verfügbar
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XC2365B40F80LRABKXUMA1 XC2365B40F80LRABKXUMA1 Infineon Technologies Infineon-SAK-XC2365B-40F80LR%20AB-DataSheet-v01_05-EN.pdf?fileId=5546d4626b2d8e69016b46cda5a330d0 Description: IC MCU 16/32B 320KB FLSH 100LQFP
Packaging: Cut Tape (CT)
Package / Case: 100-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 80MHz
Program Memory Size: 320KB (320K x 8)
RAM Size: 34K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: C166SV2
Data Converters: A/D 16x10b
Core Size: 16/32-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Connectivity: CANbus, EBI/EMI, I2C, LINbus, SPI, SSC, UART/USART, USI
Peripherals: I2S, POR, PWM, WDT
Supplier Device Package: PG-LQFP-100-8
Part Status: Not For New Designs
Number of I/O: 76
DigiKey Programmable: Not Verified
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SAK-XC2321D-12F66V AA Infineon Technologies Description: 16-BIT C166 MCU - XC2300 FAMILY
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SAK-XC2365B-40F80LA Infineon Technologies Infineon-XC236XB-DS-v01_00-en.pdf?fileId=db3a30433004641301301c220ced2dbc Description: 16-BIT C166 MCU - XC2300 FAMILY
DigiKey Programmable: Not Verified
Number of I/O: 76
Supplier Device Package: PG-LQFP-100-8
Peripherals: I²S, POR, PWM, WDT
Connectivity: CANbus, EBI/EMI, I²C, LINbus, SPI, SSC, UART/USART, USI
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Core Size: 16/32-Bit
Data Converters: A/D 16x10b
Core Processor: C166SV2
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 125°C (TA)
RAM Size: 34K x 8
Program Memory Size: 320KB (320K x 8)
Speed: 80MHz
Mounting Type: Surface Mount
Package / Case: 100-LQFP Exposed Pad
Packaging: Bulk
Produkt ist nicht verfügbar
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XC2365SK Infineon Technologies Description: DEV KIT
Part Status: Active
Utilized IC / Part: XC2365
Board Type: Evaluation Platform
Contents: Board(s)
Type: MCU 16-Bit
Mounting Type: Fixed
Packaging: Bulk
Produkt ist nicht verfügbar
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XC2387C136F100LABKXUMA1 Infineon Technologies XC2387C_88C_v1.3_2011-07.pdf Description: IC MCU 16/32BIT 1.088MB FLASH
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SAF-XC2387-72F66L AC SAF-XC2387-72F66L AC Infineon Technologies Infineon-XC238X-DS-v02_03-en.pdf?folderId=db3a30431375fb1a0113864e0cc701b6&fileId=db3a30431375fb1a011395dc5b3f0453&ack=t Description: IC MCU 16/32B 576KB FLSH 144LQFP
Packaging: Tape & Reel (TR)
Package / Case: 144-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 66MHz
Program Memory Size: 576KB (576K x 8)
RAM Size: 50K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: C166SV2
Data Converters: A/D 24x10b
Core Size: 16/32-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Connectivity: CANbus, EBI/EMI, I²C, LINbus, SPI, SSC, UART/USART, USI
Peripherals: I²S, POR, PWM, WDT
Supplier Device Package: PG-LQFP-144-4
Part Status: Obsolete
Number of I/O: 118
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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SAK-XC2364A-72F80L AA SAK-XC2364A-72F80L AA Infineon Technologies XC236xA.pdf Description: IC MCU 16/32B 576KB FLSH 100LQFP
Packaging: Tape & Reel (TR)
Package / Case: 100-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 80MHz
Program Memory Size: 576KB (576K x 8)
RAM Size: 50K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: C166SV2
Data Converters: A/D 16x10b
Core Size: 16/32-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Connectivity: CANbus, EBI/EMI, I2C, LINbus, SPI, SSC, UART/USART, USI
Peripherals: I2S, POR, PWM, WDT
Supplier Device Package: PG-LQFP-100-8
Number of I/O: 75
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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SAK-XC2365-72F66L AC SAK-XC2365-72F66L AC Infineon Technologies Infineon-XC236X-DS-v02_01-en.pdf?fileId=db3a30431375fb1a011395dfa754045d&ack=t Description: IC MCU 16/32B 576KB FLSH 100LQFP
Packaging: Tape & Reel (TR)
Package / Case: 100-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 66MHz
Program Memory Size: 576KB (576K x 8)
RAM Size: 50K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: C166SV2
Data Converters: A/D 16x10b
Core Size: 16/32-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Connectivity: CANbus, EBI/EMI, I2C, LINbus, SPI, SSC, UART/USART, USI
Peripherals: I2S, POR, PWM, WDT
Supplier Device Package: PG-LQFP-100-3
Number of I/O: 75
DigiKey Programmable: Not Verified
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SAK-XC2387A-72F80L AA SAK-XC2387A-72F80L AA Infineon Technologies XC238xA.pdf Description: IC MCU 16/32B 576KB FLSH 144LQFP
Packaging: Tape & Reel (TR)
Package / Case: 144-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 80MHz
Program Memory Size: 576KB (576K x 8)
RAM Size: 50K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: C166SV2
Data Converters: A/D 24x10b
Core Size: 16/32-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Connectivity: CANbus, EBI/EMI, I2C, LINbus, SPI, SSC, UART/USART, USI
Peripherals: I2S, POR, PWM, WDT
Supplier Device Package: PG-LQFP-144-4
Number of I/O: 118
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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BTS131E3045ANTMA1 BTS131E3045ANTMA1 Infineon Technologies INFNS05891-1.pdf?t.download=true&u=5oefqw Description: N-CHANNEL POWER MOSFET
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 25 V
Drain to Source Voltage (Vdss): 50 V
Vgs (Max): ±10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V
Part Status: Obsolete
Supplier Device Package: D2PAK
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Power Dissipation (Max): 75W
Rds On (Max) @ Id, Vgs: 60mOhm @ 12A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Bulk
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SAK-XC2387A-104F80L AB Infineon Technologies Description: IC MCU 16BIT 144LQFP
Produkt ist nicht verfügbar
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IPD80N04S3-06 IPD80N04S3-06 Infineon Technologies INFNS10901-1.pdf?t.download=true&u=5oefqw Description: OPTLMOS N-CHANNEL POWER MOSFET
Input Capacitance (Ciss) (Max) @ Vds: 3250 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PG-TO252-3-11
Vgs(th) (Max) @ Id: 4V @ 52µA
Power Dissipation (Max): 100W (Tc)
Rds On (Max) @ Id, Vgs: 5.2mOhm @ 80A, 10V
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Bulk
Produkt ist nicht verfügbar
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SPOC2DBBTS710336ESATOBO1 SPOC2DBBTS710336ESATOBO1 Infineon Technologies Infineon-SPOC_Application_UserManual-UM-v01_00-EN.pdf?fileId=5546d462636cc8fb0163ee3784416c4c Description: SPOC+2 BTS71330-6ESA DAUGHTERBOA
Packaging: Bulk
Function: Switch
Type: Power Management
Contents: Board(s)
Utilized IC / Part: BTS71033-6ESA
Part Status: Active
Produkt ist nicht verfügbar
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S29GL01GT11DHV023 S29GL01GT11DHV023 Infineon Technologies infineon-s29gl01gt-s29gl512t-1-gb-128-mb-512-mb-64-mb-gl-t-mirrorbit-eclipse-flash-datasheet-en.pdf?fileId=8ac78c8c7d0d8da4017d0ed2abb34fce Description: IC FLASH 1GBIT PARALLEL 64FBGA
Packaging: Tape & Reel (TR)
Package / Case: 64-LBGA
Mounting Type: Surface Mount
Memory Size: 1Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 64-FBGA (9x9)
Part Status: Active
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 110 ns
Memory Organization: 128M x 8
DigiKey Programmable: Not Verified
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S29GL01GT11DHV023 S29GL01GT11DHV023 Infineon Technologies infineon-s29gl01gt-s29gl512t-1-gb-128-mb-512-mb-64-mb-gl-t-mirrorbit-eclipse-flash-datasheet-en.pdf?fileId=8ac78c8c7d0d8da4017d0ed2abb34fce Description: IC FLASH 1GBIT PARALLEL 64FBGA
Packaging: Cut Tape (CT)
Package / Case: 64-LBGA
Mounting Type: Surface Mount
Memory Size: 1Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 64-FBGA (9x9)
Part Status: Active
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 110 ns
Memory Organization: 128M x 8
DigiKey Programmable: Not Verified
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10+26.66 EUR
25+25.82 EUR
50+25.19 EUR
100+24.57 EUR
250+23.76 EUR
500+23.16 EUR
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BAS70-06WE6327 BAS70-06WE6327 Infineon Technologies INFNS11040-1.pdf?t.download=true&u=5oefqw Description: DIODE ARR SCHOTT 70V SOT323-3-1
Current - Reverse Leakage @ Vr: 100 nA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 15 mA
Voltage - DC Reverse (Vr) (Max): 70 V
Part Status: Active
Operating Temperature - Junction: 150°C
Supplier Device Package: PG-SOT323-3-1
Current - Average Rectified (Io) (per Diode): 70mA (DC)
Diode Configuration: 1 Pair Common Anode
Technology: Schottky
Reverse Recovery Time (trr): 100 ps
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Packaging: Bulk
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7059+0.06 EUR
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BAS70-06B5000 BAS70-06B5000 Infineon Technologies INFNS09505-1.pdf?t.download=true&u=5oefqw Description: DIODE ARR SCHOT 70V 70MA SOT2333
Current - Reverse Leakage @ Vr: 100 nA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 15 mA
Voltage - DC Reverse (Vr) (Max): 70 V
Part Status: Active
Operating Temperature - Junction: 150°C
Supplier Device Package: PG-SOT23-3-3
Current - Average Rectified (Io) (per Diode): 70mA (DC)
Diode Configuration: 1 Pair Common Anode
Technology: Schottky
Speed: Small Signal =< 200mA (Io), Any Speed
Packaging: Bulk
Qualification: AEC-Q101
Grade: Automotive
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
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8510+0.065 EUR
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BAS70-06B5003 BAS70-06B5003 Infineon Technologies INFNS09505-1.pdf?t.download=true&u=5oefqw Description: DIODE ARR SCHOT 70V 70MA SOT2333
Qualification: AEC-Q101
Grade: Automotive
Current - Reverse Leakage @ Vr: 100 nA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 15 mA
Voltage - DC Reverse (Vr) (Max): 70 V
Part Status: Active
Operating Temperature - Junction: 150°C
Supplier Device Package: PG-SOT23-3-3
Current - Average Rectified (Io) (per Diode): 70mA (DC)
Diode Configuration: 1 Pair Common Anode
Technology: Schottky
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Bulk
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BAS7006B5003 BAS7006B5003 Infineon Technologies INFNS09505-1.pdf?t.download=true&u=5oefqw Description: DIODE ARRAY SCHOT 70V 70MA SOT23
Current - Reverse Leakage @ Vr: 100 nA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 15 mA
Voltage - DC Reverse (Vr) (Max): 70 V
Part Status: Active
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: PG-SOT23
Current - Average Rectified (Io) (per Diode): 70mA (DC)
Diode Configuration: 1 Pair Common Anode
Technology: Schottky
Reverse Recovery Time (trr): 100 ps
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Bulk
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BAS70-06WH6327 BAS70-06WH6327 Infineon Technologies INFNS30154-1.pdf?t.download=true&u=5oefqw Description: SCHOTTKY DIODE
Current - Reverse Leakage @ Vr: 100 nA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 15 mA
Voltage - DC Reverse (Vr) (Max): 70 V
Part Status: Active
Operating Temperature - Junction: 150°C
Supplier Device Package: PG-SOT323-3
Current - Average Rectified (Io) (per Diode): 70mA (DC)
Diode Configuration: 1 Pair Common Anode
Technology: Schottky
Reverse Recovery Time (trr): 100 ps
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Packaging: Bulk
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3606+0.14 EUR
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BAS7006E6327 BAS7006E6327 Infineon Technologies INFNS11040-1.pdf?t.download=true&u=5oefqw Description: SCHOTTKY DIODE
Produkt ist nicht verfügbar
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FF1400R17IP4PBOSA1 FF1400R17IP4PBOSA1 Infineon Technologies Infineon-FF1400R17IP4P-DS-v02_00-EN.pdf?fileId=5546d46253a864fe0153e60bd6d7773c Description: IGBT MODULE 1700V 1400A MODULE
Input Capacitance (Cies) @ Vce: 110 nF @ 25 V
Current - Collector Cutoff (Max): 5 mA
Voltage - Collector Emitter Breakdown (Max): 1700 V
Current - Collector (Ic) (Max): 1400 A
Part Status: Active
IGBT Type: Trench Field Stop
Supplier Device Package: Module
NTC Thermistor: Yes
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 1400A
Operating Temperature: -40°C ~ 150°C
Configuration: 2 Independent
Input: Standard
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Tray
Produkt ist nicht verfügbar
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BB814E6327GR2 INFNS16375-1.pdf?t.download=true&u=5oefqw
BB814E6327GR2
Hersteller: Infineon Technologies
Description: VARIABLE CAPACITANCE DIODE
Part Status: Active
Supplier Device Package: PG-SOT23-3-1
Capacitance Ratio Condition: C2/C8
Q @ Vr, F: 200 @ 2V, 100MHz
Capacitance @ Vr, F: 22.7pF @ 8V, 1MHz
Operating Temperature: -55°C ~ 125°C
Diode Type: 1 Pair Common Cathode
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Bulk
Capacitance Ratio: 2.25
Voltage - Peak Reverse (Max): 18 V
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AnzahlPreis
3463+0.15 EUR
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BB814E7801GR1HTSA1 INFNS16375-1.pdf?t.download=true&u=5oefqw
BB814E7801GR1HTSA1
Hersteller: Infineon Technologies
Description: VARIABLE CAPACITANCE DIODE
Capacitance Ratio: 2.25
Voltage - Peak Reverse (Max): 18 V
Part Status: Active
Supplier Device Package: PG-SOT23-3-1
Capacitance Ratio Condition: C2/C8
Q @ Vr, F: 200 @ 2V, 100MHz
Capacitance @ Vr, F: 22.7pF @ 8V, 1MHz
Operating Temperature: -55°C ~ 125°C
Diode Type: 1 Pair Common Cathode
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Bulk
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AnzahlPreis
2840+0.18 EUR
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BB814E6359HTMA1 INFNS16375-1.pdf?t.download=true&u=5oefqw
BB814E6359HTMA1
Hersteller: Infineon Technologies
Description: VARIABLE CAPACITANCE DIODE
Capacitance Ratio: 2.25
Voltage - Peak Reverse (Max): 18 V
Part Status: Active
Supplier Device Package: PG-SOT23-3-1
Capacitance Ratio Condition: C2/C8
Q @ Vr, F: 200 @ 2V, 100MHz
Capacitance @ Vr, F: 22.7pF @ 8V, 1MHz
Operating Temperature: -55°C ~ 125°C
Diode Type: 1 Pair Common Cathode
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Bulk
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AnzahlPreis
1893+0.26 EUR
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IPB093N04LG INFNS16287-1.pdf?t.download=true&u=5oefqw
IPB093N04LG
Hersteller: Infineon Technologies
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 9.3mOhm @ 50A, 10V
Power Dissipation (Max): 47W (Tc)
Vgs(th) (Max) @ Id: 2V @ 77µA
Supplier Device Package: PG-TO-263-3-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 20 V
auf Bestellung 1985 Stücke:
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AnzahlPreis
590+0.77 EUR
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IPB097N08N3G INFN-S-A0001299547-1.pdf?t.download=true&u=5oefqw
IPB097N08N3G
Hersteller: Infineon Technologies
Description: N-CHANNEL POWER MOSFET
Produkt ist nicht verfügbar
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BTS409L1E3062ANTMA1 INFNS30248-1.pdf?t.download=true&u=5oefqw
BTS409L1E3062ANTMA1
Hersteller: Infineon Technologies
Description: AUTOMOTIVE HIGH SIDE SWITCH
Part Status: Active
Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, Over Voltage, UVLO
Supplier Device Package: PG-TO263-5-2
Ratio - Input:Output: 1:1
Current - Output (Max): 1.8A
Voltage - Supply (Vcc/Vdd): Not Required
Voltage - Load: 5V ~ 34V
Input Type: Non-Inverting
Rds On (Typ): 160mOhm
Output Configuration: High Side
Operating Temperature: -40°C ~ 150°C (TJ)
Switch Type: General Purpose
Interface: On/Off
Number of Outputs: 1
Mounting Type: Surface Mount
Output Type: N-Channel
Package / Case: TO-263-5, D²Pak (4 Leads + Tab), TO-263BB
Features: Auto Restart
Packaging: Bulk
Produkt ist nicht verfügbar
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S29GL512T12TFVV10 Infineon-S29GL01GT_S29GL512T_1-Gb_(128_MB)_512-Mb_(64_MB)_GL-T_MirrorBit_Eclipse_Flash-DataSheet-v13_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed2abb34fce&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_in
S29GL512T12TFVV10
Hersteller: Infineon Technologies
Description: IC FLASH 512MBIT PARALLEL 56TSOP
DigiKey Programmable: Not Verified
Memory Organization: 64M x 8
Access Time: 120 ns
Memory Interface: Parallel
Write Cycle Time - Word, Page: 60ns
Part Status: Active
Supplier Device Package: 56-TSOP
Memory Format: FLASH
Technology: FLASH - NOR
Voltage - Supply: 1.65V ~ 3.6V
Operating Temperature: -40°C ~ 105°C (TA)
Mounting Type: Surface Mount
Package / Case: 56-TFSOP (0.724", 18.40mm Width)
Packaging: Tray
Memory Type: Non-Volatile
Memory Size: 512Mbit
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S29GL512T12TFVV20 infineon-s29gl01gt-s29gl512t-1-gb-128-mb-512-mb-64-mb-gl-t-mirrorbit-eclipse-flash-datasheet-en.pdf?fileId=8ac78c8c7d0d8da4017d0ed2abb34fce
S29GL512T12TFVV20
Hersteller: Infineon Technologies
Description: IC FLASH 512MBIT PARALLEL 56TSOP
DigiKey Programmable: Not Verified
Memory Organization: 64M x 8
Access Time: 120 ns
Memory Interface: Parallel
Write Cycle Time - Word, Page: 60ns
Part Status: Active
Supplier Device Package: 56-TSOP
Memory Format: FLASH
Technology: FLASH - NOR
Voltage - Supply: 1.65V ~ 3.6V
Operating Temperature: -40°C ~ 105°C (TA)
Memory Type: Non-Volatile
Memory Size: 512Mbit
Mounting Type: Surface Mount
Package / Case: 56-TFSOP (0.724", 18.40mm Width)
Packaging: Tray
auf Bestellung 1768 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
2+17.39 EUR
10+16.16 EUR
25+15.66 EUR
91+14.96 EUR
182+14.59 EUR
273+14.37 EUR
546+14.01 EUR
1001+13.7 EUR
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S26KL512SDABHA020 Infineon-512-MB_(64_MB)_256-MB_(32_MB)_128-MB_(16_MB)_1.8_V_3.0_V_HYPERFLASH_FAMILY-DataSheet-v15_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed5ca77559f
S26KL512SDABHA020
Hersteller: Infineon Technologies
Description: IC FLASH 256MBIT HYPERBUS 24FBGA
Part Status: Active
Supplier Device Package: 24-FBGA (6x8)
Memory Format: FLASH
Clock Frequency: 100 MHz
Technology: FLASH - NOR
Voltage - Supply: 2.7V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Memory Type: Non-Volatile
Memory Size: 512Mbit
Mounting Type: Surface Mount
Package / Case: 24-VBGA
Packaging: Tray
Memory Organization: 64M x 8
Access Time: 96 ns
Memory Interface: HyperBus
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
Grade: Automotive
Produkt ist nicht verfügbar
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CY8C4146FNI-S443T Infineon-PSOC_4_PSOC_4100S_DATASHEET_PROGRAMMABLE_SYSTEM-ON-CHIP_(PSOC)-DataSheet-v15_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0eda5fc45c69&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
CY8C4146FNI-S443T
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 64KB FLASH 35WLCSP
Core Processor: ARM® Cortex®-M0+
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 85°C (TA)
RAM Size: 8K x 8
Program Memory Size: 64KB (64K x 8)
Speed: 48MHz
Mounting Type: Surface Mount
Package / Case: 35-XFBGA, WLCSP
Packaging: Tape & Reel (TR)
DigiKey Programmable: Not Verified
Number of I/O: 31
Supplier Device Package: 35-WLCSP (2.11x2.6)
Peripherals: Brown-out Detect/Reset, CapSense, LCD, POR, PWM, WDT
Connectivity: I2C, IrDA, LINbus, SPI, UART/USART
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Core Size: 32-Bit Single-Core
Data Converters: A/D 16x10b Slope, 16x12b SAR; D/A 2xIDAC
Produkt ist nicht verfügbar
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ADM6992CXABT1
ADM6992CXABT1
Hersteller: Infineon Technologies
Description: FIBER TO FAST ETHERNET CONVERTER
DigiKey Programmable: Not Verified
Part Status: Active
Supplier Device Package: PG-TQFP-64
Standards: 10/100 Base-FX/T/TX PHY
Protocol: Ethernet
Voltage - Supply: 3.135V ~ 3.465V
Operating Temperature: 0°C ~ 115°C
Function: Switch
Package / Case: 64-LQFP
Packaging: Bulk
auf Bestellung 6596 Stücke:
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AnzahlPreis
89+5.42 EUR
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PMA7106XUMA1 PMA71xx.pdf
PMA7106XUMA1
Hersteller: Infineon Technologies
Description: RF TX IC ASK 315/434MHZ 38TFSOP
Packaging: Bulk
Package / Case: 38-TFSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Frequency: 315MHz, 434MHz, 868MHz, 915MHz
Memory Size: 6KB Flash, 12KB ROM, 256 Byte RAM
Modulation or Protocol: ASK, FSK
Data Interface: PCB, Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 1.9V ~ 3.6V
Power - Output: 10dBm
Applications: Remote Control, Remote Metering
Data Rate (Max): 20kbps
Current - Transmitting: 17.1mA
Antenna Connector: PCB, Surface Mount
Supplier Device Package: PG-TSSOP-38
DigiKey Programmable: Not Verified
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AnzahlPreis
158+2.84 EUR
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SMBT3906SE6327 INFNS09883-1.pdf?t.download=true&u=5oefqw
SMBT3906SE6327
Hersteller: Infineon Technologies
Description: TRANS 2PNP DARL 40V 0.2A SOT-363
Packaging: Bulk
Package / Case: 6-VSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 PNP Darlington (Dual)
Operating Temperature: 150°C (TJ)
Power - Max: 330W
Current - Collector (Ic) (Max): 200mA
Voltage - Collector Emitter Breakdown (Max): 40V
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V
Frequency - Transition: 250MHz
Supplier Device Package: SOT-363
Part Status: Active
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AnzahlPreis
7059+0.06 EUR
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SMBT3906SH6327 INFNS19373-1.pdf?t.download=true&u=5oefqw
Hersteller: Infineon Technologies
Description: SMALL SIGNAL BIPOLAR TRANSISTOR
Packaging: Bulk
Package / Case: 6-VSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V
Frequency - Transition: 250MHz
Supplier Device Package: PG-SOT363-6-1
Part Status: Active
Current - Collector (Ic) (Max): 200 mA
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 250 mW
auf Bestellung 30000 Stücke:
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AnzahlPreis
4351+0.12 EUR
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SMBTA92E6327 INFNS10822-1.pdf?t.download=true&u=5oefqw
SMBTA92E6327
Hersteller: Infineon Technologies
Description: SMALL SIGNAL BIPOLAR TRANSISTOR
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 2mA, 20mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 10mA, 10V
Frequency - Transition: 50MHz
Supplier Device Package: PG-SOT23-3-3
Part Status: Active
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 300 V
Power - Max: 360 mW
Produkt ist nicht verfügbar
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SMBTA92E6433 INFNS10822-1.pdf?t.download=true&u=5oefqw
SMBTA92E6433
Hersteller: Infineon Technologies
Description: SMALL SIGNAL BIPOLAR TRANSISTOR
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 2mA, 20mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 10mA, 10V
Frequency - Transition: 50MHz
Supplier Device Package: PG-SOT23-3-3
Part Status: Active
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 300 V
Power - Max: 360 mW
Produkt ist nicht verfügbar
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BSS80C INFNS07914-1.pdf?t.download=true&u=5oefqw
BSS80C
Hersteller: Infineon Technologies
Description: SMALL SIGNAL BIPOLAR TRANSISTOR
Packaging: Bulk
Part Status: Active
Produkt ist nicht verfügbar
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TLS810C1EJV33XUMA1 Infineon-TLS810C1EJ+V33-DS-v01_10-EN.pdf?fileId=5546d46258fc0bc1015969ed915d4258
TLS810C1EJV33XUMA1
Hersteller: Infineon Technologies
Description: IC REG LINEAR 3.3V 100MA DSO8
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 100mA
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 10 µA
Voltage - Input (Max): 42V
Number of Regulators: 1
Supplier Device Package: PG-DSO-8
Voltage - Output (Min/Fixed): 3.3V
Control Features: Reset
Grade: Automotive
PSRR: 60dB (100Hz)
Voltage Dropout (Max): 0.65V @ 100mA
Protection Features: Over Current, Over Temperature, Short Circuit
Current - Supply (Max): 15 µA
Qualification: AEC-Q100
Produkt ist nicht verfügbar
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IRG4BC40SPBF irg4bc40spbf.pdf?fileId=5546d462533600a4015356432d57229a
IRG4BC40SPBF
Hersteller: Infineon Technologies
Description: IGBT 600V 60A TO-220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.5V @ 15V, 31A
Supplier Device Package: TO-220AB
Td (on/off) @ 25°C: 22ns/650ns
Switching Energy: 450µJ (on), 6.5mJ (off)
Test Condition: 480V, 31A, 10Ohm, 15V
Gate Charge: 100 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 160 W
Produkt ist nicht verfügbar
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SMBTA56E6433HTMA1 smbta56_mmbta56.pdf?folderId=db3a304314dca389011545f4eb561884&fileId=db3a304314dca38901155fad71671d8c
SMBTA56E6433HTMA1
Hersteller: Infineon Technologies
Description: TRANS PNP 80V 0.5A PG-SOT23
Power - Max: 330 mW
Voltage - Collector Emitter Breakdown (Max): 80 V
Current - Collector (Ic) (Max): 500 mA
Part Status: Last Time Buy
Supplier Device Package: PG-SOT23
Frequency - Transition: 100MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 1V
Current - Collector Cutoff (Max): 100nA
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Operating Temperature: 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Bulk
auf Bestellung 362000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
5530+0.076 EUR
Mindestbestellmenge: 5530 Stücke
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SMBTA56E6327HTSA1 smbta56_mmbta56.pdf?folderId=db3a304314dca389011545f4eb561884&fileId=db3a304314dca38901155fad71671d8c
SMBTA56E6327HTSA1
Hersteller: Infineon Technologies
Description: TRANS PNP 80V 0.5A PG-SOT23
Power - Max: 330 mW
Voltage - Collector Emitter Breakdown (Max): 80 V
Current - Collector (Ic) (Max): 500 mA
Part Status: Last Time Buy
Supplier Device Package: PG-SOT23
Frequency - Transition: 100MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 1V
Current - Collector Cutoff (Max): 100nA
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Operating Temperature: 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Bulk
auf Bestellung 182000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
5530+0.076 EUR
Mindestbestellmenge: 5530 Stücke
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SMBT2907AE6327 INFNS10708-1.pdf?t.download=true&u=5oefqw
SMBT2907AE6327
Hersteller: Infineon Technologies
Description: SMALL SIGNAL BIPOLAR TRANSISTOR
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max): 10nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Frequency - Transition: 200MHz
Supplier Device Package: PG-SOT23-3-3
Part Status: Active
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 330 mW
Produkt ist nicht verfügbar
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SMBT3904E6327 INFNS11268-1.pdf?t.download=true&u=5oefqw
SMBT3904E6327
Hersteller: Infineon Technologies
Description: SMALL SIGNAL BIPOLAR TRANSISTOR
Produkt ist nicht verfügbar
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SMBTA56E6433 INFNS11460-1.pdf?t.download=true&u=5oefqw
SMBTA56E6433
Hersteller: Infineon Technologies
Description: TRANS PNP 80V 0.5A SOT23
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 1V
Frequency - Transition: 100MHz
Supplier Device Package: PG-SOT23
Part Status: Active
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 330 mW
auf Bestellung 125058 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
6204+0.083 EUR
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SMBT3906E6327 INFNS11768-1.pdf?t.download=true&u=5oefqw
SMBT3906E6327
Hersteller: Infineon Technologies
Description: SMALL SIGNAL BIPOLAR TRANSISTOR
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SMBT 3904 E6433 INFNS11268-1.pdf?t.download=true&u=5oefqw
Hersteller: Infineon Technologies
Description: TRANS NPN 40V 0.2A SC74-6
Produkt ist nicht verfügbar
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SMBTA56E6327 INFNS11460-1.pdf?t.download=true&u=5oefqw
SMBTA56E6327
Hersteller: Infineon Technologies
Description: TRANS PNP 80V 0.5A SOT23
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 1V
Frequency - Transition: 100MHz
Supplier Device Package: PG-SOT23
Part Status: Active
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 330 mW
auf Bestellung 20594 Stücke:
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AnzahlPreis
6204+0.083 EUR
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SMBT3904UPNE6327 INFNS10678-1.pdf?t.download=true&u=5oefqw
SMBT3904UPNE6327
Hersteller: Infineon Technologies
Description: SMALL SIGNAL BIPOLAR TRANSISTOR
auf Bestellung 46386 Stücke:
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AnzahlPreis
3826+0.14 EUR
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SMBT3906UE6327 INFNS09883-1.pdf?t.download=true&u=5oefqw
Hersteller: Infineon Technologies
Description: SMALL SIGNAL BIPOLAR TRANSISTOR
Packaging: Bulk
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V
Frequency - Transition: 250MHz
Supplier Device Package: PG-SC74-6-1
Part Status: Active
Current - Collector (Ic) (Max): 200 mA
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 330 mW
Produkt ist nicht verfügbar
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SMBT3904UPNE3627 INFNS19371-1.pdf?t.download=true&u=5oefqw
SMBT3904UPNE3627
Hersteller: Infineon Technologies
Description: SMALL SIGNAL BIPOLAR TRANSISTOR
Packaging: Bulk
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Transistor Type: NPN, PNP
Operating Temperature: 150°C (TJ)
Power - Max: 330mW
Current - Collector (Ic) (Max): 200mA
Voltage - Collector Emitter Breakdown (Max): 40V
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V
Frequency - Transition: 250MHz
Supplier Device Package: PG-SC74-6
Part Status: Active
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AnzahlPreis
3073+0.17 EUR
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SMBD7000E6327HTSA1 smbd7000_mmbd7000series.pdf?folderId=db3a30431400ef6801141b5844e103ea&fileId=db3a30431400ef6801141c43b6f30446
SMBD7000E6327HTSA1
Hersteller: Infineon Technologies
Description: DIODE ARRAY GP 100V 200MA SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 200mA (DC)
Supplier Device Package: PG-SOT23
Operating Temperature - Junction: 150°C (Max)
Part Status: Last Time Buy
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 500 nA @ 100 V
auf Bestellung 28058 Stücke:
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AnzahlPreis
48+0.37 EUR
76+0.23 EUR
122+0.14 EUR
500+0.11 EUR
1000+0.093 EUR
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BUZ30A H3045A INFNS15132-1.pdf?t.download=true&u=5oefqw
Hersteller: Infineon Technologies
Description: N-CHANNEL POWER MOSFET
Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 25 V
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: PG-TO263-3-2
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 125W (Tc)
Rds On (Max) @ Id, Vgs: 130mOhm @ 13.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Bulk
Produkt ist nicht verfügbar
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BUZ30AH INFNS15131-1.pdf?t.download=true&u=5oefqw
Hersteller: Infineon Technologies
Description: MOSFET N-CH 200V 21A TO220-3
Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 25 V
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): ±20V
Supplier Device Package: PG-TO220-3
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 125W (Tc)
Rds On (Max) @ Id, Vgs: 130mOhm @ 13.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Bulk
Produkt ist nicht verfügbar
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SAK-TC1793F-512F200EFAB
Hersteller: Infineon Technologies
Description: 32-BIT RISC FLASH MCU
Produkt ist nicht verfügbar
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ICE1PCS01XK
Hersteller: Infineon Technologies
Description: POWER FACTOR CONTROLLER
Packaging: Bulk
Produkt ist nicht verfügbar
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BSM100GB120DN2B2HOSA1 EUPCS02845-1.pdf?t.download=true&u=5oefqw
Hersteller: Infineon Technologies
Description: IGBT MODULE
Packaging: Bulk
auf Bestellung 17 Stücke:
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AnzahlPreis
4+145.96 EUR
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IDL02G65C5XUMA1 Infineon-IDL02G65C5-DS-v02_00-en.pdf?fileId=db3a304342e8be2c0142ffd4f05a141d
IDL02G65C5XUMA1
Hersteller: Infineon Technologies
Description: DIODE SIL CARBIDE 650V 2A VSON-4
Current - Reverse Leakage @ Vr: 35 µA @ 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 2 A
Voltage - DC Reverse (Vr) (Max): 650 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: PG-VSON-4
Current - Average Rectified (Io): 2A
Capacitance @ Vr, F: 70pF @ 1V, 1MHz
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Surface Mount
Package / Case: 4-PowerTSFN
Packaging: Bulk
auf Bestellung 2189 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
303+1.62 EUR
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IPB048N06LG INFNS16292-1.pdf?t.download=true&u=5oefqw
IPB048N06LG
Hersteller: Infineon Technologies
Description: N-CHANNEL POWER MOSFET
Input Capacitance (Ciss) (Max) @ Vds: 7600 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 225 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PG-TO-263-3-2
Vgs(th) (Max) @ Id: 2V @ 270µA
Power Dissipation (Max): 300W (Tc)
Rds On (Max) @ Id, Vgs: 4.7mOhm @ 100A, 10V
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Bulk
Produkt ist nicht verfügbar
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XC2365B40F80LRABKXUMA1 Infineon-SAK-XC2365B-40F80LR%20AB-DataSheet-v01_05-EN.pdf?fileId=5546d4626b2d8e69016b46cda5a330d0
XC2365B40F80LRABKXUMA1
Hersteller: Infineon Technologies
Description: IC MCU 16/32B 320KB FLSH 100LQFP
Packaging: Cut Tape (CT)
Package / Case: 100-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 80MHz
Program Memory Size: 320KB (320K x 8)
RAM Size: 34K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: C166SV2
Data Converters: A/D 16x10b
Core Size: 16/32-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Connectivity: CANbus, EBI/EMI, I2C, LINbus, SPI, SSC, UART/USART, USI
Peripherals: I2S, POR, PWM, WDT
Supplier Device Package: PG-LQFP-100-8
Part Status: Not For New Designs
Number of I/O: 76
DigiKey Programmable: Not Verified
auf Bestellung 83 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
1+25.5 EUR
10+20.22 EUR
25+18.9 EUR
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SAK-XC2321D-12F66V AA
Hersteller: Infineon Technologies
Description: 16-BIT C166 MCU - XC2300 FAMILY
Produkt ist nicht verfügbar
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SAK-XC2365B-40F80LA Infineon-XC236XB-DS-v01_00-en.pdf?fileId=db3a30433004641301301c220ced2dbc
Hersteller: Infineon Technologies
Description: 16-BIT C166 MCU - XC2300 FAMILY
DigiKey Programmable: Not Verified
Number of I/O: 76
Supplier Device Package: PG-LQFP-100-8
Peripherals: I²S, POR, PWM, WDT
Connectivity: CANbus, EBI/EMI, I²C, LINbus, SPI, SSC, UART/USART, USI
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Core Size: 16/32-Bit
Data Converters: A/D 16x10b
Core Processor: C166SV2
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 125°C (TA)
RAM Size: 34K x 8
Program Memory Size: 320KB (320K x 8)
Speed: 80MHz
Mounting Type: Surface Mount
Package / Case: 100-LQFP Exposed Pad
Packaging: Bulk
Produkt ist nicht verfügbar
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XC2365SK
Hersteller: Infineon Technologies
Description: DEV KIT
Part Status: Active
Utilized IC / Part: XC2365
Board Type: Evaluation Platform
Contents: Board(s)
Type: MCU 16-Bit
Mounting Type: Fixed
Packaging: Bulk
Produkt ist nicht verfügbar
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XC2387C136F100LABKXUMA1 XC2387C_88C_v1.3_2011-07.pdf
Hersteller: Infineon Technologies
Description: IC MCU 16/32BIT 1.088MB FLASH
Produkt ist nicht verfügbar
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SAF-XC2387-72F66L AC Infineon-XC238X-DS-v02_03-en.pdf?folderId=db3a30431375fb1a0113864e0cc701b6&fileId=db3a30431375fb1a011395dc5b3f0453&ack=t
SAF-XC2387-72F66L AC
Hersteller: Infineon Technologies
Description: IC MCU 16/32B 576KB FLSH 144LQFP
Packaging: Tape & Reel (TR)
Package / Case: 144-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 66MHz
Program Memory Size: 576KB (576K x 8)
RAM Size: 50K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: C166SV2
Data Converters: A/D 24x10b
Core Size: 16/32-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Connectivity: CANbus, EBI/EMI, I²C, LINbus, SPI, SSC, UART/USART, USI
Peripherals: I²S, POR, PWM, WDT
Supplier Device Package: PG-LQFP-144-4
Part Status: Obsolete
Number of I/O: 118
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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SAK-XC2364A-72F80L AA XC236xA.pdf
SAK-XC2364A-72F80L AA
Hersteller: Infineon Technologies
Description: IC MCU 16/32B 576KB FLSH 100LQFP
Packaging: Tape & Reel (TR)
Package / Case: 100-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 80MHz
Program Memory Size: 576KB (576K x 8)
RAM Size: 50K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: C166SV2
Data Converters: A/D 16x10b
Core Size: 16/32-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Connectivity: CANbus, EBI/EMI, I2C, LINbus, SPI, SSC, UART/USART, USI
Peripherals: I2S, POR, PWM, WDT
Supplier Device Package: PG-LQFP-100-8
Number of I/O: 75
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
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SAK-XC2365-72F66L AC Infineon-XC236X-DS-v02_01-en.pdf?fileId=db3a30431375fb1a011395dfa754045d&ack=t
SAK-XC2365-72F66L AC
Hersteller: Infineon Technologies
Description: IC MCU 16/32B 576KB FLSH 100LQFP
Packaging: Tape & Reel (TR)
Package / Case: 100-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 66MHz
Program Memory Size: 576KB (576K x 8)
RAM Size: 50K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: C166SV2
Data Converters: A/D 16x10b
Core Size: 16/32-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Connectivity: CANbus, EBI/EMI, I2C, LINbus, SPI, SSC, UART/USART, USI
Peripherals: I2S, POR, PWM, WDT
Supplier Device Package: PG-LQFP-100-3
Number of I/O: 75
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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SAK-XC2387A-72F80L AA XC238xA.pdf
SAK-XC2387A-72F80L AA
Hersteller: Infineon Technologies
Description: IC MCU 16/32B 576KB FLSH 144LQFP
Packaging: Tape & Reel (TR)
Package / Case: 144-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 80MHz
Program Memory Size: 576KB (576K x 8)
RAM Size: 50K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: C166SV2
Data Converters: A/D 24x10b
Core Size: 16/32-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Connectivity: CANbus, EBI/EMI, I2C, LINbus, SPI, SSC, UART/USART, USI
Peripherals: I2S, POR, PWM, WDT
Supplier Device Package: PG-LQFP-144-4
Number of I/O: 118
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
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BTS131E3045ANTMA1 INFNS05891-1.pdf?t.download=true&u=5oefqw
BTS131E3045ANTMA1
Hersteller: Infineon Technologies
Description: N-CHANNEL POWER MOSFET
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 25 V
Drain to Source Voltage (Vdss): 50 V
Vgs (Max): ±10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V
Part Status: Obsolete
Supplier Device Package: D2PAK
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Power Dissipation (Max): 75W
Rds On (Max) @ Id, Vgs: 60mOhm @ 12A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Bulk
auf Bestellung 8919 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
41+12.6 EUR
Mindestbestellmenge: 41 Stücke
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SAK-XC2387A-104F80L AB
Hersteller: Infineon Technologies
Description: IC MCU 16BIT 144LQFP
Produkt ist nicht verfügbar
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IPD80N04S3-06 INFNS10901-1.pdf?t.download=true&u=5oefqw
IPD80N04S3-06
Hersteller: Infineon Technologies
Description: OPTLMOS N-CHANNEL POWER MOSFET
Input Capacitance (Ciss) (Max) @ Vds: 3250 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PG-TO252-3-11
Vgs(th) (Max) @ Id: 4V @ 52µA
Power Dissipation (Max): 100W (Tc)
Rds On (Max) @ Id, Vgs: 5.2mOhm @ 80A, 10V
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Bulk
Produkt ist nicht verfügbar
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SPOC2DBBTS710336ESATOBO1 Infineon-SPOC_Application_UserManual-UM-v01_00-EN.pdf?fileId=5546d462636cc8fb0163ee3784416c4c
SPOC2DBBTS710336ESATOBO1
Hersteller: Infineon Technologies
Description: SPOC+2 BTS71330-6ESA DAUGHTERBOA
Packaging: Bulk
Function: Switch
Type: Power Management
Contents: Board(s)
Utilized IC / Part: BTS71033-6ESA
Part Status: Active
Produkt ist nicht verfügbar
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S29GL01GT11DHV023 infineon-s29gl01gt-s29gl512t-1-gb-128-mb-512-mb-64-mb-gl-t-mirrorbit-eclipse-flash-datasheet-en.pdf?fileId=8ac78c8c7d0d8da4017d0ed2abb34fce
S29GL01GT11DHV023
Hersteller: Infineon Technologies
Description: IC FLASH 1GBIT PARALLEL 64FBGA
Packaging: Tape & Reel (TR)
Package / Case: 64-LBGA
Mounting Type: Surface Mount
Memory Size: 1Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 64-FBGA (9x9)
Part Status: Active
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 110 ns
Memory Organization: 128M x 8
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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S29GL01GT11DHV023 infineon-s29gl01gt-s29gl512t-1-gb-128-mb-512-mb-64-mb-gl-t-mirrorbit-eclipse-flash-datasheet-en.pdf?fileId=8ac78c8c7d0d8da4017d0ed2abb34fce
S29GL01GT11DHV023
Hersteller: Infineon Technologies
Description: IC FLASH 1GBIT PARALLEL 64FBGA
Packaging: Cut Tape (CT)
Package / Case: 64-LBGA
Mounting Type: Surface Mount
Memory Size: 1Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 64-FBGA (9x9)
Part Status: Active
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 110 ns
Memory Organization: 128M x 8
DigiKey Programmable: Not Verified
auf Bestellung 2045 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
1+28.74 EUR
10+26.66 EUR
25+25.82 EUR
50+25.19 EUR
100+24.57 EUR
250+23.76 EUR
500+23.16 EUR
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BAS70-06WE6327 INFNS11040-1.pdf?t.download=true&u=5oefqw
BAS70-06WE6327
Hersteller: Infineon Technologies
Description: DIODE ARR SCHOTT 70V SOT323-3-1
Current - Reverse Leakage @ Vr: 100 nA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 15 mA
Voltage - DC Reverse (Vr) (Max): 70 V
Part Status: Active
Operating Temperature - Junction: 150°C
Supplier Device Package: PG-SOT323-3-1
Current - Average Rectified (Io) (per Diode): 70mA (DC)
Diode Configuration: 1 Pair Common Anode
Technology: Schottky
Reverse Recovery Time (trr): 100 ps
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Packaging: Bulk
auf Bestellung 201000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
7059+0.06 EUR
Mindestbestellmenge: 7059 Stücke
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BAS70-06B5000 INFNS09505-1.pdf?t.download=true&u=5oefqw
BAS70-06B5000
Hersteller: Infineon Technologies
Description: DIODE ARR SCHOT 70V 70MA SOT2333
Current - Reverse Leakage @ Vr: 100 nA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 15 mA
Voltage - DC Reverse (Vr) (Max): 70 V
Part Status: Active
Operating Temperature - Junction: 150°C
Supplier Device Package: PG-SOT23-3-3
Current - Average Rectified (Io) (per Diode): 70mA (DC)
Diode Configuration: 1 Pair Common Anode
Technology: Schottky
Speed: Small Signal =< 200mA (Io), Any Speed
Packaging: Bulk
Qualification: AEC-Q101
Grade: Automotive
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
auf Bestellung 180000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
8510+0.065 EUR
Mindestbestellmenge: 8510 Stücke
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BAS70-06B5003 INFNS09505-1.pdf?t.download=true&u=5oefqw
BAS70-06B5003
Hersteller: Infineon Technologies
Description: DIODE ARR SCHOT 70V 70MA SOT2333
Qualification: AEC-Q101
Grade: Automotive
Current - Reverse Leakage @ Vr: 100 nA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 15 mA
Voltage - DC Reverse (Vr) (Max): 70 V
Part Status: Active
Operating Temperature - Junction: 150°C
Supplier Device Package: PG-SOT23-3-3
Current - Average Rectified (Io) (per Diode): 70mA (DC)
Diode Configuration: 1 Pair Common Anode
Technology: Schottky
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Bulk
auf Bestellung 60000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
8510+0.065 EUR
Mindestbestellmenge: 8510 Stücke
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BAS7006B5003 INFNS09505-1.pdf?t.download=true&u=5oefqw
BAS7006B5003
Hersteller: Infineon Technologies
Description: DIODE ARRAY SCHOT 70V 70MA SOT23
Current - Reverse Leakage @ Vr: 100 nA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 15 mA
Voltage - DC Reverse (Vr) (Max): 70 V
Part Status: Active
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: PG-SOT23
Current - Average Rectified (Io) (per Diode): 70mA (DC)
Diode Configuration: 1 Pair Common Anode
Technology: Schottky
Reverse Recovery Time (trr): 100 ps
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Bulk
auf Bestellung 30000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
8510+0.065 EUR
Mindestbestellmenge: 8510 Stücke
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BAS70-06WH6327 INFNS30154-1.pdf?t.download=true&u=5oefqw
BAS70-06WH6327
Hersteller: Infineon Technologies
Description: SCHOTTKY DIODE
Current - Reverse Leakage @ Vr: 100 nA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 15 mA
Voltage - DC Reverse (Vr) (Max): 70 V
Part Status: Active
Operating Temperature - Junction: 150°C
Supplier Device Package: PG-SOT323-3
Current - Average Rectified (Io) (per Diode): 70mA (DC)
Diode Configuration: 1 Pair Common Anode
Technology: Schottky
Reverse Recovery Time (trr): 100 ps
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Packaging: Bulk
auf Bestellung 18000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
3606+0.14 EUR
Mindestbestellmenge: 3606 Stücke
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BAS7006E6327 INFNS11040-1.pdf?t.download=true&u=5oefqw
BAS7006E6327
Hersteller: Infineon Technologies
Description: SCHOTTKY DIODE
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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FF1400R17IP4PBOSA1 Infineon-FF1400R17IP4P-DS-v02_00-EN.pdf?fileId=5546d46253a864fe0153e60bd6d7773c
FF1400R17IP4PBOSA1
Hersteller: Infineon Technologies
Description: IGBT MODULE 1700V 1400A MODULE
Input Capacitance (Cies) @ Vce: 110 nF @ 25 V
Current - Collector Cutoff (Max): 5 mA
Voltage - Collector Emitter Breakdown (Max): 1700 V
Current - Collector (Ic) (Max): 1400 A
Part Status: Active
IGBT Type: Trench Field Stop
Supplier Device Package: Module
NTC Thermistor: Yes
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 1400A
Operating Temperature: -40°C ~ 150°C
Configuration: 2 Independent
Input: Standard
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Tray
Produkt ist nicht verfügbar
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