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PVA3054 PVA3054 Infineon Technologies pva33.pdf Description: SSR RELAY SPST-NO 40MA 0-300V
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm), 4 Leads
Output Type: AC, DC
Mounting Type: Through Hole
Voltage - Input: 1.2VDC
Circuit: SPST-NO (1 Form A)
Operating Temperature: -40°C ~ 85°C
Termination Style: PC Pin
Load Current: 40 mA
Approval Agency: UL
Relay Type: Photo-Coupled Relay (Photorelay)
Supplier Device Package: 8-DIP Modified
Part Status: Obsolete
Voltage - Load: 0 V ~ 300 V
On-State Resistance (Max): 160 Ohms
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PVA3055 PVA3055 Infineon Technologies pva30.pdf Description: SSR RELAY SPST-NO 40MA 0-300V
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PEB42652VV1.1 Infineon Technologies INTL-S-A0006019977-1.pdf?t.download=true&u=5oefqw Description: DUSLIC DUAL CHANNEL SLIC
Packaging: Bulk
Part Status: Active
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PEB4265-2TV1.1GD Infineon Technologies Description: DUSLIC DUAL CHANNEL SLIC
Packaging: Bulk
Part Status: Active
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ICL5101XUMA1 ICL5101XUMA1 Infineon Technologies Infineon-ICL5101-DS-v01_30-EN.pdf?fileId=5546d4624b0b249c014b73386f216550 Description: IC LED DRIVER OFFL 16DSO
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Number of Outputs: 3
Type: AC DC Offline Switcher
Operating Temperature: -40°C ~ 125°C (TJ)
Applications: Lighting
Internal Switch(s): No
Supplier Device Package: PG-DSO-16-23
Part Status: Not For New Designs
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KITAURIXTC267TFTTOBO1 KITAURIXTC267TFTTOBO1 Infineon Technologies Description: AURIX APPLICATION KIT TC267 TFT
Platform: AURIX
Utilized IC / Part: TC267
Core Processor: TriCore™
Contents: Board(s), LCD
Type: MCU 32-Bit
Mounting Type: Fixed
Packaging: Box
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IRF6636TRPBF IRF6636TRPBF Infineon Technologies irf6636pbf.pdf?fileId=5546d462533600a4015355e8f7b31a41 Description: MOSFET N-CH 20V 18A DIRECTFET
Packaging: Tape & Reel (TR)
Package / Case: DirectFET™ Isometric ST
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 81A (Tc)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 18A, 10V
Power Dissipation (Max): 2.2W (Ta), 42W (Tc)
Vgs(th) (Max) @ Id: 2.45V @ 250µA
Supplier Device Package: DIRECTFET™ ST
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2420 pF @ 10 V
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IPB037N06N3GATMA1 IPB037N06N3GATMA1 Infineon Technologies Infineon-IPB037N06N3%20G-DS-v02_00-EN.pdf?fileId=5546d46268554f4a01685b00fd7802f5 Description: MOSFET N-CH 60V 90A D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 11000 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 98 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PG-TO263-3
Vgs(th) (Max) @ Id: 4V @ 90µA
Power Dissipation (Max): 188W (Tc)
Rds On (Max) @ Id, Vgs: 3.7mOhm @ 90A, 10V
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
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IPB037N06N3GATMA1 IPB037N06N3GATMA1 Infineon Technologies Infineon-IPB037N06N3%20G-DS-v02_00-EN.pdf?fileId=5546d46268554f4a01685b00fd7802f5 Description: MOSFET N-CH 60V 90A D2PAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PG-TO263-3
Vgs(th) (Max) @ Id: 4V @ 90µA
Power Dissipation (Max): 188W (Tc)
Rds On (Max) @ Id, Vgs: 3.7mOhm @ 90A, 10V
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 11000 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 98 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
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BGH 92M E6327 Infineon Technologies Product+and+Application+Guide.pdf?folderId=db3a30431441fb5d01146ec76de80910&fileId=db3a304329a0f6ee0129b13c338f0372 Description: FILTER LC ESD SMD
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IRS21814SPBF IRS21814SPBF Infineon Technologies INFN-S-A0002363258-1.pdf?t.download=true&u=5oefqw description Description: IC GATE DRVR HALF-BRIDGE 14SOIC
Packaging: Tube
Part Status: Active
Current - Peak Output (Source, Sink): 1.9A, 2.3A
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Gate Type: IGBT, MOSFET (N-Channel)
Number of Drivers: 2
Driven Configuration: Half-Bridge
Channel Type: Independent
Rise / Fall Time (Typ): 40ns, 20ns
Supplier Device Package: 14-SOIC
High Side Voltage - Max (Bootstrap): 600 V
Input Type: Non-Inverting
Voltage - Supply: 10V ~ 20V
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 14-SOIC (0.154", 3.90mm Width)
DigiKey Programmable: Not Verified
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IRS21814PBF IRS21814PBF Infineon Technologies INFN-S-A0002363258-1.pdf?t.download=true&u=5oefqw description Description: IC GATE DRVR HALF-BRIDGE 14DIP
DigiKey Programmable: Not Verified
Part Status: Discontinued at Digi-Key
Current - Peak Output (Source, Sink): 1.9A, 2.3A
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Gate Type: IGBT, MOSFET (N-Channel)
Driven Configuration: Half-Bridge
Channel Type: Independent
Rise / Fall Time (Typ): 40ns, 20ns
Supplier Device Package: 14-DIP
High Side Voltage - Max (Bootstrap): 600 V
Input Type: Non-Inverting
Voltage - Supply: 10V ~ 20V
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: 14-DIP (0.300", 7.62mm)
Packaging: Tube
Number of Drivers: 2
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AUIRS21814S AUIRS21814S Infineon Technologies IRSDS19254-1.pdf?t.download=true&u=5oefqw Description: IC GATE DRVR HALF-BRIDGE 14SOIC
Part Status: Obsolete
Current - Peak Output (Source, Sink): 1.9A, 2.3A
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Gate Type: IGBT, MOSFET (N-Channel)
Number of Drivers: 2
Driven Configuration: Half-Bridge
Channel Type: Independent
Rise / Fall Time (Typ): 15ns, 15ns
Supplier Device Package: 14-SOIC
High Side Voltage - Max (Bootstrap): 600 V
Input Type: Inverting
Voltage - Supply: 10V ~ 20V
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Packaging: Tube
DigiKey Programmable: Not Verified
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IRS21814MPBF IRS21814MPBF Infineon Technologies irs21814mpbf.pdf?fileId=5546d462533600a401535676c8a827d6 Description: IC GATE DRVR HALF-BRIDGE 16MLPQ
Part Status: Obsolete
Current - Peak Output (Source, Sink): 1.9A, 2.3A
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Gate Type: MOSFET (N-Channel)
Number of Drivers: 2
Driven Configuration: Half-Bridge
Channel Type: Independent
Rise / Fall Time (Typ): 40ns, 20ns
Supplier Device Package: 16-MLPQ (4x4)
High Side Voltage - Max (Bootstrap): 600 V
Input Type: Non-Inverting
Voltage - Supply: 10V ~ 20V
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 16-VFQFN Exposed Pad, 14 Leads
Packaging: Tube
DigiKey Programmable: Not Verified
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MMBTA06LT1 MMBTA06LT1 Infineon Technologies ONSMS30148-1.pdf?t.download=true&u=5oefqw description Description: TRANS NPN 80V 0.5A SOT23-3
Voltage - Collector Emitter Breakdown (Max): 80 V
Current - Collector (Ic) (Max): 500 mA
Part Status: Obsolete
Supplier Device Package: SOT-23-3 (TO-236)
Frequency - Transition: 100MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 1V
Current - Collector Cutoff (Max): 100nA
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Bulk
Power - Max: 225 mW
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PSB2163NV3.1G Infineon Technologies SIEMS00943-1.pdf?t.download=true&u=5oefqw Description: ARCOFI AUDIO RINGING CODEC
Packaging: Bulk
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PEB20560V3.1DOC PEB20560V3.1DOC Infineon Technologies Description: TIME SLOT ASSIGNER
Packaging: Bulk
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PSB2163NV3.1 Infineon Technologies SIEMS00943-1.pdf?t.download=true&u=5oefqw Description: ARCOFI AUDIO RINGING CODEC
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PEB20570FV3.1 PEB20570FV3.1 Infineon Technologies delic-lc_delic-pb.pdf?t.download=true&u=ovmfp3 Description: LINE & PORT INTERFACE CONTROLLER
Packaging: Bulk
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Function: Line Card Controller
Interface: ISDN
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 3.13V ~ 3.47V
Current - Supply: 272.6mA
Supplier Device Package: PG-TQFP-100-3
Part Status: Active
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PSB7280FV3.1D Infineon Technologies PSB7280.pdf?t.download=true&u=ovmfp3 Description: JOINT AUDIO DECODER-ENCODER
Packaging: Bulk
Part Status: Active
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PEB2096HV3.1 PEB2096HV3.1 Infineon Technologies Description: OCTAT-P OCTAL TRANSCEICER
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PEF22554HTV3.1 Infineon Technologies Description: QUADFALC FRAMER & LINE INTERFACE
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BC857AE6327 BC857AE6327 Infineon Technologies INFNS16508-1.pdf?t.download=true&u=5oefqw Description: TRANS PNP 45V 0.1A SOT23
Frequency - Transition: 250MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 125 @ 2mA, 5V
Current - Collector Cutoff (Max): 15nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Operating Temperature: 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Bulk
Power - Max: 330 mW
Voltage - Collector Emitter Breakdown (Max): 45 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Active
Supplier Device Package: PG-SOT23
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IPA023N04NM3SXKSA1 Infineon Technologies Description: TRENCH <= 40V
Part Status: Active
Packaging: Tube
Produkt ist nicht verfügbar
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S2GOPRESSUREDPS310TOBO1 S2GOPRESSUREDPS310TOBO1 Infineon Technologies Infineon-DPS310-Pressure-Shield2Go-GS-v01_03-EN.pdf?fileId=5546d46264a8de7e0164cc3275f03116 Description: EVAL PRESSURE DPS310
Packaging: Box
Function: Pressure
Type: Sensor
Contents: Board(s)
Utilized IC / Part: DPS310
Platform: Shield2Go
Part Status: Active
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SPB100N04S2-04 SPB100N04S2-04 Infineon Technologies SPP%2CSPB100N04S2-04.pdf Description: MOSFET N-CH 40V 100A TO263-3
Packaging: Bulk
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 3.3mOhm @ 80A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PG-TO263-3-2
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 172 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7220 pF @ 25 V
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T1080N02TOFXPSA1 T1080N02TOFXPSA1 Infineon Technologies Infineon-T1080N-DS-v03_01-en_de.pdf?fileId=db3a3043284aacd8012863528c2a5301 Description: SCR MODULE 600V 2000A DO200AA
Packaging: Tray
Package / Case: DO-200AA, A-PUK
Mounting Type: Clamp On
Operating Temperature: -40°C ~ 140°C
Structure: Single
Current - Hold (Ih) (Max): 200 mA
Current - Gate Trigger (Igt) (Max): 200 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 16000A @ 50Hz
Number of SCRs, Diodes: 1 SCR
Current - On State (It (AV)) (Max): 1078 A
Voltage - Gate Trigger (Vgt) (Max): 2 V
Part Status: Obsolete
Current - On State (It (RMS)) (Max): 2000 A
Voltage - Off State: 600 V
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T580N02TOFXPSA1 Infineon Technologies T580N.pdf Description: SCR MODULE 600V 800A DO200AA
Packaging: Tray
Package / Case: TO-200AA
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 140°C
Structure: Single
Current - Hold (Ih) (Max): 200 mA
Current - Gate Trigger (Igt) (Max): 150 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 6300A @ 50Hz
Number of SCRs, Diodes: 1 SCR
Current - On State (It (AV)) (Max): 568 A
Voltage - Gate Trigger (Vgt) (Max): 1.4 V
Part Status: Obsolete
Current - On State (It (RMS)) (Max): 800 A
Voltage - Off State: 600 V
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SABC161SLM3VAABXUMA1 SABC161SLM3VAABXUMA1 Infineon Technologies INFNS05712-1.pdf?t.download=true&u=5oefqw Description: LEGACY 16-BIT MCU
DigiKey Programmable: Not Verified
Number of I/O: 63
Part Status: Active
Supplier Device Package: PG-MQFP-80-7
Peripherals: POR, PWM, WDT
Connectivity: EBI/EMI, SPI, UART/USART
Voltage - Supply (Vcc/Vdd): 3V ~ 3.6V
Core Size: 16-Bit
Core Processor: C166
Program Memory Type: ROMless
Oscillator Type: External, Internal
Operating Temperature: 0°C ~ 70°C (TA)
RAM Size: 2K x 8
Speed: 20MHz
Mounting Type: Surface Mount
Package / Case: 80-QFP
Packaging: Bulk
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BSC100N03MSG Infineon Technologies INFNS27235-1.pdf?t.download=true&u=5oefqw Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 44A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 30A, 10V
Power Dissipation (Max): 2.5W (Ta), 30W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TDSON-8-5
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 15 V
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BSC100N03LSG BSC100N03LSG Infineon Technologies INFNS16184-1.pdf?t.download=true&u=5oefqw Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 44A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 30A, 10V
Power Dissipation (Max): 2.5W (Ta), 30W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: PG-TDSON-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 15 V
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IPC60R160C6X1SA1 Infineon Technologies Description: MOSFET N-CH BARE DIE
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IPC60R160C6UNSAWNX6SA1 Infineon Technologies Description: MOSFET N-CH BARE DIE
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KITA2GTC3875VTFTTOBO1 KITA2GTC3875VTFTTOBO1 Infineon Technologies Infineon-ApplicationKitManual_TC3X7-UM-v02_00-EN.pdf?fileId=5546d462696dbf120169b454383c483d Description: AURIX TC387 5V TFT EVAL BRD
Platform: AURIX TC387 5V TFT
Core Processor: TriCore™
Contents: Board(s), LCD
Mounting Type: Fixed
Part Status: Active
Supplied Contents: Board(s)
Utilized IC / Part: TC387
Type: MCU 32-Bit
Function: USB to UART (RS232) Bridge
Packaging: Bulk
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BSP60 BSP60 Infineon Technologies INFNS17369-1.pdf?t.download=true&u=5oefqw Description: TRANS PNP DARL 45V 1A SOT2234-21
Packaging: Bulk
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: PNP - Darlington
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.8V @ 1mA, 1A
Current - Collector Cutoff (Max): 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 2000 @ 500mA, 10V
Frequency - Transition: 200MHz
Supplier Device Package: PG-SOT223-4-21
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 1.5 W
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BSP60E6327 BSP60E6327 Infineon Technologies INFNS17369-1.pdf?t.download=true&u=5oefqw Description: TRANS PNP DARL 45V 1A SOT223-4
Power - Max: 1.5 W
Voltage - Collector Emitter Breakdown (Max): 45 V
Current - Collector (Ic) (Max): 1 A
Supplier Device Package: PG-SOT223-4-21
Frequency - Transition: 200MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 2000 @ 500mA, 10V
Current - Collector Cutoff (Max): 10µA
Vce Saturation (Max) @ Ib, Ic: 1.8V @ 1mA, 1A
Operating Temperature: 150°C (TJ)
Transistor Type: PNP - Darlington
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Packaging: Bulk
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BSP603S2LNT BSP603S2LNT Infineon Technologies INFNS12252-1.pdf?t.download=true&u=5oefqw Description: N-CHANNEL POWER MOSFET
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 1390 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
Drain to Source Voltage (Vdss): 55 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: PG-SOT223-4-21
Vgs(th) (Max) @ Id: 2V @ 50µA
Power Dissipation (Max): 1.8W (Ta)
Rds On (Max) @ Id, Vgs: 33mOhm @ 2.6A, 10V
Current - Continuous Drain (Id) @ 25°C: 5.2A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Packaging: Bulk
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BSP60H6327XTSA1 BSP60H6327XTSA1 Infineon Technologies bsp60_bsp61_bsp62.pdf?folderId=db3a30431441fb5d011445c30f210183&fileId=db3a30431441fb5d011445e1c2e7018a Description: TRANS PNP DARL 45V 1A SOT223-4
Packaging: Bulk
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: PNP - Darlington
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.8V @ 1mA, 1A
Current - Collector Cutoff (Max): 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 2000 @ 500mA, 10V
Frequency - Transition: 200MHz
Supplier Device Package: PG-SOT223-4
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 1.5 W
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BSP 60 E6433 BSP 60 E6433 Infineon Technologies bsp60_bsp61_bsp62.pdf?folderId=db3a30431441fb5d011445c30f210183&fileId=db3a30431441fb5d011445e1c2e7018a Description: TRANS PNP DARL 45V 1A SOT223-4
Transistor Type: PNP - Darlington
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Packaging: Tape & Reel (TR)
Power - Max: 1.5 W
Voltage - Collector Emitter Breakdown (Max): 45 V
Current - Collector (Ic) (Max): 1 A
Supplier Device Package: PG-SOT223-4
Frequency - Transition: 200MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 2000 @ 500mA, 10V
Current - Collector Cutoff (Max): 10µA
Vce Saturation (Max) @ Ib, Ic: 1.8V @ 1mA, 1A
Operating Temperature: 150°C (TJ)
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BSP61E6327HTSA1 BSP61E6327HTSA1 Infineon Technologies bsp60_bsp61_bsp62.pdf?folderId=db3a30431441fb5d011445c30f210183&fileId=db3a30431441fb5d011445e1c2e7018a Description: TRANS PNP DARL 60V 1A SOT223-4
Power - Max: 1.5 W
Voltage - Collector Emitter Breakdown (Max): 60 V
Current - Collector (Ic) (Max): 1 A
Part Status: Obsolete
Supplier Device Package: PG-SOT223-4
Frequency - Transition: 200MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 2000 @ 500mA, 10V
Current - Collector Cutoff (Max): 10µA
Vce Saturation (Max) @ Ib, Ic: 1.8V @ 1mA, 1A
Operating Temperature: 150°C (TJ)
Transistor Type: PNP - Darlington
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Packaging: Bulk
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BSP61E6327 BSP61E6327 Infineon Technologies INFNS10837-1.pdf?t.download=true&u=5oefqw Description: SMALL SIGNAL BIPOLAR TRANSISTOR
Part Status: Active
Supplier Device Package: PG-SOT223
Frequency - Transition: 200MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 2000 @ 500mA, 10V
Current - Collector Cutoff (Max): 10µA
Vce Saturation (Max) @ Ib, Ic: 1.8V @ 1mA, 1A
Operating Temperature: 150°C (TJ)
Power - Max: 1.5 W
Voltage - Collector Emitter Breakdown (Max): 60 V
Current - Collector (Ic) (Max): 1 A
Transistor Type: PNP - Darlington
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Packaging: Bulk
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BFR 360L3E6765 Infineon Technologies INFNS10726-1.pdf?t.download=true&u=5oefqw Description: LOW-NOISE TRANSISTOR
Part Status: Active
Supplier Device Package: PG-TSLP-3-1
Noise Figure (dB Typ @ f): 1dB ~ 1.3dB @ 1.8GHz ~ 3GHz
Frequency - Transition: 14GHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 90 @ 15mA, 3V
Voltage - Collector Emitter Breakdown (Max): 6V
Current - Collector (Ic) (Max): 35mA
Power - Max: 210mW
Gain: 16dB
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: SC-101, SOT-883
Packaging: Bulk
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BFR360L3E6765 BFR360L3E6765 Infineon Technologies INFNS10726-1.pdf?t.download=true&u=5oefqw Description: LOW-NOISE SI TRANSISTOR
Part Status: Active
Supplier Device Package: PG-TSLP-3-1
Noise Figure (dB Typ @ f): 1dB ~ 1.3dB @ 1.8GHz ~ 3GHz
Frequency - Transition: 14GHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 90 @ 15mA, 3V
Voltage - Collector Emitter Breakdown (Max): 9V
Current - Collector (Ic) (Max): 35mA
Power - Max: 210mW
Gain: 11.5dB ~ 16dB
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: SC-101, SOT-883
Packaging: Bulk
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TC336LP32F200SAAKXUMA1 Infineon Technologies Infineon-TriCore_Family_BR-ProductBrochure-v01_00-EN.pdf?fileId=5546d4625d5945ed015dc81f47b436c7 Description: AURIX 2G
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IRLML6402TRPBF-1 Infineon Technologies IRLML6402PbF-1_10-28-14.pdf Description: MOSFET P-CH 20V 3.7A SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.7A (Ta)
Rds On (Max) @ Id, Vgs: 65mOhm @ 3.7A, 4.5V
Power Dissipation (Max): 1.3W (Ta)
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: Micro3™/SOT-23
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 633 pF @ 10 V
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6MS24017E33W31361NOSA1 6MS24017E33W31361NOSA1 Infineon Technologies Description: IGBT MODULE 1700V A-MS3-1
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BAT18-05E6327 Infineon Technologies INFNS15701-1.pdf?t.download=true&u=5oefqw Description: PIN DIODE, 35V V(BR)
Current - Max: 100 mA
Part Status: Active
Supplier Device Package: PG-SOT23
Voltage - Peak Reverse (Max): 35V
Resistance @ If, F: 700mOhm @ 5mA, 200MHz
Capacitance @ Vr, F: 1pF @ 20V, 1MHz
Operating Temperature: 150°C (TJ)
Diode Type: PIN - 1 Pair Common Cathode
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Bulk
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BAT1805E6327HTSA1 BAT1805E6327HTSA1 Infineon Technologies INFNS15701-1.pdf?t.download=true&u=5oefqw Description: RF DIODE 35V PG-SOT23
Current - Max: 100 mA
Part Status: Active
Supplier Device Package: PG-SOT23
Voltage - Peak Reverse (Max): 35V
Resistance @ If, F: 700mOhm @ 5mA, 200MHz
Capacitance @ Vr, F: 1pF @ 20V, 1MHz
Operating Temperature: 150°C (TJ)
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Bulk
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BAT1805E6327 Infineon Technologies INFNS15701-1.pdf?t.download=true&u=5oefqw Description: PIN DIODE, 35V V(BR)
Current - Reverse Leakage @ Vr: 20 nA @ 20 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Voltage - DC Reverse (Vr) (Max): 35 V
Part Status: Active
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: PG-SOT23
Current - Average Rectified (Io) (per Diode): 100mA (DC)
Diode Configuration: 1 Pair Common Cathode
Technology: Standard
Reverse Recovery Time (trr): 120 ns
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Bulk
Produkt ist nicht verfügbar
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IPZ60R037P7XKSA1 IPZ60R037P7XKSA1 Infineon Technologies Description: MOSFET N-CH 650V 76A TO247-4
Power Dissipation (Max): 255W (Tc)
Rds On (Max) @ Id, Vgs: 37mOhm @ 29.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 76A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-4
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 5243 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 121 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: PG-TO247-4
Vgs(th) (Max) @ Id: 4V @ 1.48mA
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IPZ60R041P6FKSA1 IPZ60R041P6FKSA1 Infineon Technologies Infineon-IPZ60R041P6-DS-v02_00-EN.pdf?fileId=5546d4624e765da5014ee36a7dc20200 Description: MOSFET N-CH 600V 77.5A TO247-4
Part Status: Obsolete
Supplier Device Package: PG-TO247-4
Vgs(th) (Max) @ Id: 4.5V @ 2.96mA
Power Dissipation (Max): 481W (Tc)
Rds On (Max) @ Id, Vgs: 41mOhm @ 35.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 77.5A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-4
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 8180 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
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CY7C1412AV18-200BZC CY7C1412AV18-200BZC Infineon Technologies CY7C1425AV18%2C%20CY7C141%280%2C2%2C4%29AV18_8.pdf Description: IC SRAM 36MBIT PARALLEL 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 36Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, QDR II
Clock Frequency: 200 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (15x17)
Memory Interface: Parallel
Memory Organization: 2M x 18
DigiKey Programmable: Not Verified
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CY7C1415BV18-200BZXC CY7C1415BV18-200BZXC Infineon Technologies CY7C1411%2C13%2C15%2C26BV18.pdf Description: IC SRAM 36MBIT PARALLEL 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 36Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, QDR II
Clock Frequency: 200 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (15x17)
Memory Interface: Parallel
Memory Organization: 1M x 36
DigiKey Programmable: Not Verified
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CY7C1412BV18-167BZC CY7C1412BV18-167BZC Infineon Technologies CY7C141%282%2C4%29BV18_RevE.pdf Description: IC SRAM 36MBIT PAR 165FBGA
Memory Format: SRAM
Clock Frequency: 167 MHz
Technology: SRAM - Synchronous, QDR II
Voltage - Supply: 1.7V ~ 1.9V
Operating Temperature: 0°C ~ 70°C (TA)
Memory Type: Volatile
Memory Size: 36Mbit
Mounting Type: Surface Mount
Package / Case: 165-LBGA
Packaging: Tray
DigiKey Programmable: Not Verified
Memory Organization: 2M x 18
Memory Interface: Parallel
Supplier Device Package: 165-FBGA (15x17)
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DT430N22KOFHPSA1 Infineon Technologies Description: SCR MODULE PB60-1
Packaging: Tray
Part Status: Obsolete
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IPP042N03L G Infineon Technologies INFNS16316-1.pdf?t.download=true&u=5oefqw Description: N-CHANNEL POWER MOSFET
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TLE4276DVNTMA1 TLE4276DVNTMA1 Infineon Technologies Infineon-TLE4276-DS-v02_80-EN.pdf?fileId=5546d4626102d35a01612c4b988a6576 Description: IC REG LINEAR ADJ LDO REGULATOR
Current - Supply (Max): 25 mA
Protection Features: Antisaturation, Over Temperature, Reverse Polarity, Short Circuit
Voltage Dropout (Max): 0.5V @ 250mA
PSRR: 54dB (100Hz)
Part Status: Active
Control Features: Inhibit
Voltage - Output (Min/Fixed): 2.5V
Voltage - Output (Max): 20V
Supplier Device Package: PG-TO263-5-1
Number of Regulators: 1
Voltage - Input (Max): 40V
Current - Quiescent (Iq): 220 µA
Output Configuration: Positive
Operating Temperature: -40°C ~ 150°C (TJ)
Current - Output: 400mA
Mounting Type: Surface Mount
Output Type: Adjustable
Package / Case: TO-263-6, D²Pak (5 Leads + Tab), TO-263BA
Packaging: Bulk
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IRFI4905 IRFI4905 Infineon Technologies irfi4905.pdf Description: MOSFET P-CH 55V 41A TO220AB FP
Input Capacitance (Ciss) (Max) @ Vds: 3400 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 180 nC @ 10 V
Drain to Source Voltage (Vdss): 55 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-220AB Full-Pak
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 63W (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ 22A, 10V
Current - Continuous Drain (Id) @ 25°C: 41A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
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IRFC4905B Infineon Technologies Description: MOSFET 55V 42A DIE
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: Die
Rds On (Max) @ Id, Vgs: 20mOhm @ 42A, 10V
Current - Continuous Drain (Id) @ 25°C: 42A
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 55 V
Mounting Type: Surface Mount
Package / Case: Die
Packaging: Bulk
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IR3889MTRPBFAUMA1 IR3889MTRPBFAUMA1 Infineon Technologies Infineon-IR3889MTRPBF-DataSheet-v02_03-EN.pdf?fileId=5546d4626b2d8e69016b6c1a8ae45608 Description: IC REG BUCK ADJ 30A IQFN-36
Part Status: Active
Voltage - Output (Min/Fixed): 0.8V
Voltage - Input (Min): 2V
Voltage - Output (Max): 17V
Synchronous Rectifier: Yes
Supplier Device Package: PG-IQFN-36-2
Topology: Buck
Voltage - Input (Max): 17V
Frequency - Switching: 600kHz ~ 2MHz
Output Configuration: Positive
Operating Temperature: -40°C ~ 150°C (TJ)
Current - Output: 30A
Function: Step-Down
Number of Outputs: 1
Mounting Type: Surface Mount
Output Type: Adjustable
Package / Case: 36-PowerVFQFN
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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PVA3054 pva33.pdf
PVA3054
Hersteller: Infineon Technologies
Description: SSR RELAY SPST-NO 40MA 0-300V
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm), 4 Leads
Output Type: AC, DC
Mounting Type: Through Hole
Voltage - Input: 1.2VDC
Circuit: SPST-NO (1 Form A)
Operating Temperature: -40°C ~ 85°C
Termination Style: PC Pin
Load Current: 40 mA
Approval Agency: UL
Relay Type: Photo-Coupled Relay (Photorelay)
Supplier Device Package: 8-DIP Modified
Part Status: Obsolete
Voltage - Load: 0 V ~ 300 V
On-State Resistance (Max): 160 Ohms
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PVA3055 pva30.pdf
PVA3055
Hersteller: Infineon Technologies
Description: SSR RELAY SPST-NO 40MA 0-300V
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PEB42652VV1.1 INTL-S-A0006019977-1.pdf?t.download=true&u=5oefqw
Hersteller: Infineon Technologies
Description: DUSLIC DUAL CHANNEL SLIC
Packaging: Bulk
Part Status: Active
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PEB4265-2TV1.1GD
Hersteller: Infineon Technologies
Description: DUSLIC DUAL CHANNEL SLIC
Packaging: Bulk
Part Status: Active
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ICL5101XUMA1 Infineon-ICL5101-DS-v01_30-EN.pdf?fileId=5546d4624b0b249c014b73386f216550
ICL5101XUMA1
Hersteller: Infineon Technologies
Description: IC LED DRIVER OFFL 16DSO
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Number of Outputs: 3
Type: AC DC Offline Switcher
Operating Temperature: -40°C ~ 125°C (TJ)
Applications: Lighting
Internal Switch(s): No
Supplier Device Package: PG-DSO-16-23
Part Status: Not For New Designs
Produkt ist nicht verfügbar
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KITAURIXTC267TFTTOBO1
KITAURIXTC267TFTTOBO1
Hersteller: Infineon Technologies
Description: AURIX APPLICATION KIT TC267 TFT
Platform: AURIX
Utilized IC / Part: TC267
Core Processor: TriCore™
Contents: Board(s), LCD
Type: MCU 32-Bit
Mounting Type: Fixed
Packaging: Box
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IRF6636TRPBF irf6636pbf.pdf?fileId=5546d462533600a4015355e8f7b31a41
IRF6636TRPBF
Hersteller: Infineon Technologies
Description: MOSFET N-CH 20V 18A DIRECTFET
Packaging: Tape & Reel (TR)
Package / Case: DirectFET™ Isometric ST
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 81A (Tc)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 18A, 10V
Power Dissipation (Max): 2.2W (Ta), 42W (Tc)
Vgs(th) (Max) @ Id: 2.45V @ 250µA
Supplier Device Package: DIRECTFET™ ST
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2420 pF @ 10 V
Produkt ist nicht verfügbar
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IPB037N06N3GATMA1 Infineon-IPB037N06N3%20G-DS-v02_00-EN.pdf?fileId=5546d46268554f4a01685b00fd7802f5
IPB037N06N3GATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 60V 90A D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 11000 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 98 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PG-TO263-3
Vgs(th) (Max) @ Id: 4V @ 90µA
Power Dissipation (Max): 188W (Tc)
Rds On (Max) @ Id, Vgs: 3.7mOhm @ 90A, 10V
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
1000+1.27 EUR
Mindestbestellmenge: 1000 Stücke
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IPB037N06N3GATMA1 Infineon-IPB037N06N3%20G-DS-v02_00-EN.pdf?fileId=5546d46268554f4a01685b00fd7802f5
IPB037N06N3GATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 60V 90A D2PAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PG-TO263-3
Vgs(th) (Max) @ Id: 4V @ 90µA
Power Dissipation (Max): 188W (Tc)
Rds On (Max) @ Id, Vgs: 3.7mOhm @ 90A, 10V
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 11000 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 98 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
auf Bestellung 1537 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
5+3.98 EUR
10+2.57 EUR
100+1.76 EUR
500+1.42 EUR
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BGH 92M E6327 Product+and+Application+Guide.pdf?folderId=db3a30431441fb5d01146ec76de80910&fileId=db3a304329a0f6ee0129b13c338f0372
Hersteller: Infineon Technologies
Description: FILTER LC ESD SMD
Produkt ist nicht verfügbar
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IRS21814SPBF description INFN-S-A0002363258-1.pdf?t.download=true&u=5oefqw
IRS21814SPBF
Hersteller: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 14SOIC
Packaging: Tube
Part Status: Active
Current - Peak Output (Source, Sink): 1.9A, 2.3A
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Gate Type: IGBT, MOSFET (N-Channel)
Number of Drivers: 2
Driven Configuration: Half-Bridge
Channel Type: Independent
Rise / Fall Time (Typ): 40ns, 20ns
Supplier Device Package: 14-SOIC
High Side Voltage - Max (Bootstrap): 600 V
Input Type: Non-Inverting
Voltage - Supply: 10V ~ 20V
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 14-SOIC (0.154", 3.90mm Width)
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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IRS21814PBF description INFN-S-A0002363258-1.pdf?t.download=true&u=5oefqw
IRS21814PBF
Hersteller: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 14DIP
DigiKey Programmable: Not Verified
Part Status: Discontinued at Digi-Key
Current - Peak Output (Source, Sink): 1.9A, 2.3A
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Gate Type: IGBT, MOSFET (N-Channel)
Driven Configuration: Half-Bridge
Channel Type: Independent
Rise / Fall Time (Typ): 40ns, 20ns
Supplier Device Package: 14-DIP
High Side Voltage - Max (Bootstrap): 600 V
Input Type: Non-Inverting
Voltage - Supply: 10V ~ 20V
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: 14-DIP (0.300", 7.62mm)
Packaging: Tube
Number of Drivers: 2
Produkt ist nicht verfügbar
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AUIRS21814S IRSDS19254-1.pdf?t.download=true&u=5oefqw
AUIRS21814S
Hersteller: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 14SOIC
Part Status: Obsolete
Current - Peak Output (Source, Sink): 1.9A, 2.3A
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Gate Type: IGBT, MOSFET (N-Channel)
Number of Drivers: 2
Driven Configuration: Half-Bridge
Channel Type: Independent
Rise / Fall Time (Typ): 15ns, 15ns
Supplier Device Package: 14-SOIC
High Side Voltage - Max (Bootstrap): 600 V
Input Type: Inverting
Voltage - Supply: 10V ~ 20V
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Packaging: Tube
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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IRS21814MPBF irs21814mpbf.pdf?fileId=5546d462533600a401535676c8a827d6
IRS21814MPBF
Hersteller: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 16MLPQ
Part Status: Obsolete
Current - Peak Output (Source, Sink): 1.9A, 2.3A
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Gate Type: MOSFET (N-Channel)
Number of Drivers: 2
Driven Configuration: Half-Bridge
Channel Type: Independent
Rise / Fall Time (Typ): 40ns, 20ns
Supplier Device Package: 16-MLPQ (4x4)
High Side Voltage - Max (Bootstrap): 600 V
Input Type: Non-Inverting
Voltage - Supply: 10V ~ 20V
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 16-VFQFN Exposed Pad, 14 Leads
Packaging: Tube
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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MMBTA06LT1 description ONSMS30148-1.pdf?t.download=true&u=5oefqw
MMBTA06LT1
Hersteller: Infineon Technologies
Description: TRANS NPN 80V 0.5A SOT23-3
Voltage - Collector Emitter Breakdown (Max): 80 V
Current - Collector (Ic) (Max): 500 mA
Part Status: Obsolete
Supplier Device Package: SOT-23-3 (TO-236)
Frequency - Transition: 100MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 1V
Current - Collector Cutoff (Max): 100nA
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Bulk
Power - Max: 225 mW
Produkt ist nicht verfügbar
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PSB2163NV3.1G SIEMS00943-1.pdf?t.download=true&u=5oefqw
Hersteller: Infineon Technologies
Description: ARCOFI AUDIO RINGING CODEC
Packaging: Bulk
auf Bestellung 275 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
22+22.55 EUR
Mindestbestellmenge: 22 Stücke
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PEB20560V3.1DOC
PEB20560V3.1DOC
Hersteller: Infineon Technologies
Description: TIME SLOT ASSIGNER
Packaging: Bulk
auf Bestellung 14230 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
8+68.68 EUR
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PSB2163NV3.1 SIEMS00943-1.pdf?t.download=true&u=5oefqw
Hersteller: Infineon Technologies
Description: ARCOFI AUDIO RINGING CODEC
Produkt ist nicht verfügbar
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PEB20570FV3.1 delic-lc_delic-pb.pdf?t.download=true&u=ovmfp3
PEB20570FV3.1
Hersteller: Infineon Technologies
Description: LINE & PORT INTERFACE CONTROLLER
Packaging: Bulk
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Function: Line Card Controller
Interface: ISDN
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 3.13V ~ 3.47V
Current - Supply: 272.6mA
Supplier Device Package: PG-TQFP-100-3
Part Status: Active
auf Bestellung 2571 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
11+42.41 EUR
Mindestbestellmenge: 11 Stücke
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PSB7280FV3.1D PSB7280.pdf?t.download=true&u=ovmfp3
Hersteller: Infineon Technologies
Description: JOINT AUDIO DECODER-ENCODER
Packaging: Bulk
Part Status: Active
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AnzahlPreis
10+47.01 EUR
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PEB2096HV3.1
PEB2096HV3.1
Hersteller: Infineon Technologies
Description: OCTAT-P OCTAL TRANSCEICER
Produkt ist nicht verfügbar
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PEF22554HTV3.1
Hersteller: Infineon Technologies
Description: QUADFALC FRAMER & LINE INTERFACE
Produkt ist nicht verfügbar
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BC857AE6327 INFNS16508-1.pdf?t.download=true&u=5oefqw
BC857AE6327
Hersteller: Infineon Technologies
Description: TRANS PNP 45V 0.1A SOT23
Frequency - Transition: 250MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 125 @ 2mA, 5V
Current - Collector Cutoff (Max): 15nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Operating Temperature: 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Bulk
Power - Max: 330 mW
Voltage - Collector Emitter Breakdown (Max): 45 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Active
Supplier Device Package: PG-SOT23
auf Bestellung 36000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
7818+0.064 EUR
Mindestbestellmenge: 7818 Stücke
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IPA023N04NM3SXKSA1
Hersteller: Infineon Technologies
Description: TRENCH <= 40V
Part Status: Active
Packaging: Tube
Produkt ist nicht verfügbar
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S2GOPRESSUREDPS310TOBO1 Infineon-DPS310-Pressure-Shield2Go-GS-v01_03-EN.pdf?fileId=5546d46264a8de7e0164cc3275f03116
S2GOPRESSUREDPS310TOBO1
Hersteller: Infineon Technologies
Description: EVAL PRESSURE DPS310
Packaging: Box
Function: Pressure
Type: Sensor
Contents: Board(s)
Utilized IC / Part: DPS310
Platform: Shield2Go
Part Status: Active
auf Bestellung 157 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
2+12.72 EUR
Mindestbestellmenge: 2 Stücke
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SPB100N04S2-04 SPP%2CSPB100N04S2-04.pdf
SPB100N04S2-04
Hersteller: Infineon Technologies
Description: MOSFET N-CH 40V 100A TO263-3
Packaging: Bulk
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 3.3mOhm @ 80A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PG-TO263-3-2
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 172 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7220 pF @ 25 V
auf Bestellung 433 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
167+2.69 EUR
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T1080N02TOFXPSA1 Infineon-T1080N-DS-v03_01-en_de.pdf?fileId=db3a3043284aacd8012863528c2a5301
T1080N02TOFXPSA1
Hersteller: Infineon Technologies
Description: SCR MODULE 600V 2000A DO200AA
Packaging: Tray
Package / Case: DO-200AA, A-PUK
Mounting Type: Clamp On
Operating Temperature: -40°C ~ 140°C
Structure: Single
Current - Hold (Ih) (Max): 200 mA
Current - Gate Trigger (Igt) (Max): 200 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 16000A @ 50Hz
Number of SCRs, Diodes: 1 SCR
Current - On State (It (AV)) (Max): 1078 A
Voltage - Gate Trigger (Vgt) (Max): 2 V
Part Status: Obsolete
Current - On State (It (RMS)) (Max): 2000 A
Voltage - Off State: 600 V
Produkt ist nicht verfügbar
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T580N02TOFXPSA1 T580N.pdf
Hersteller: Infineon Technologies
Description: SCR MODULE 600V 800A DO200AA
Packaging: Tray
Package / Case: TO-200AA
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 140°C
Structure: Single
Current - Hold (Ih) (Max): 200 mA
Current - Gate Trigger (Igt) (Max): 150 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 6300A @ 50Hz
Number of SCRs, Diodes: 1 SCR
Current - On State (It (AV)) (Max): 568 A
Voltage - Gate Trigger (Vgt) (Max): 1.4 V
Part Status: Obsolete
Current - On State (It (RMS)) (Max): 800 A
Voltage - Off State: 600 V
Produkt ist nicht verfügbar
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SABC161SLM3VAABXUMA1 INFNS05712-1.pdf?t.download=true&u=5oefqw
SABC161SLM3VAABXUMA1
Hersteller: Infineon Technologies
Description: LEGACY 16-BIT MCU
DigiKey Programmable: Not Verified
Number of I/O: 63
Part Status: Active
Supplier Device Package: PG-MQFP-80-7
Peripherals: POR, PWM, WDT
Connectivity: EBI/EMI, SPI, UART/USART
Voltage - Supply (Vcc/Vdd): 3V ~ 3.6V
Core Size: 16-Bit
Core Processor: C166
Program Memory Type: ROMless
Oscillator Type: External, Internal
Operating Temperature: 0°C ~ 70°C (TA)
RAM Size: 2K x 8
Speed: 20MHz
Mounting Type: Surface Mount
Package / Case: 80-QFP
Packaging: Bulk
auf Bestellung 662 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
63+7.95 EUR
Mindestbestellmenge: 63 Stücke
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BSC100N03MSG INFNS27235-1.pdf?t.download=true&u=5oefqw
Hersteller: Infineon Technologies
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 44A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 30A, 10V
Power Dissipation (Max): 2.5W (Ta), 30W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TDSON-8-5
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 15 V
Produkt ist nicht verfügbar
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BSC100N03LSG INFNS16184-1.pdf?t.download=true&u=5oefqw
BSC100N03LSG
Hersteller: Infineon Technologies
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 44A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 30A, 10V
Power Dissipation (Max): 2.5W (Ta), 30W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: PG-TDSON-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 15 V
Produkt ist nicht verfügbar
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IPC60R160C6X1SA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH BARE DIE
Produkt ist nicht verfügbar
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IPC60R160C6UNSAWNX6SA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH BARE DIE
Produkt ist nicht verfügbar
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KITA2GTC3875VTFTTOBO1 Infineon-ApplicationKitManual_TC3X7-UM-v02_00-EN.pdf?fileId=5546d462696dbf120169b454383c483d
KITA2GTC3875VTFTTOBO1
Hersteller: Infineon Technologies
Description: AURIX TC387 5V TFT EVAL BRD
Platform: AURIX TC387 5V TFT
Core Processor: TriCore™
Contents: Board(s), LCD
Mounting Type: Fixed
Part Status: Active
Supplied Contents: Board(s)
Utilized IC / Part: TC387
Type: MCU 32-Bit
Function: USB to UART (RS232) Bridge
Packaging: Bulk
auf Bestellung 36 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
1+452.21 EUR
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BSP60 INFNS17369-1.pdf?t.download=true&u=5oefqw
BSP60
Hersteller: Infineon Technologies
Description: TRANS PNP DARL 45V 1A SOT2234-21
Packaging: Bulk
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: PNP - Darlington
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.8V @ 1mA, 1A
Current - Collector Cutoff (Max): 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 2000 @ 500mA, 10V
Frequency - Transition: 200MHz
Supplier Device Package: PG-SOT223-4-21
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 1.5 W
auf Bestellung 31070 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
1416+0.32 EUR
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BSP60E6327 INFNS17369-1.pdf?t.download=true&u=5oefqw
BSP60E6327
Hersteller: Infineon Technologies
Description: TRANS PNP DARL 45V 1A SOT223-4
Power - Max: 1.5 W
Voltage - Collector Emitter Breakdown (Max): 45 V
Current - Collector (Ic) (Max): 1 A
Supplier Device Package: PG-SOT223-4-21
Frequency - Transition: 200MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 2000 @ 500mA, 10V
Current - Collector Cutoff (Max): 10µA
Vce Saturation (Max) @ Ib, Ic: 1.8V @ 1mA, 1A
Operating Temperature: 150°C (TJ)
Transistor Type: PNP - Darlington
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Packaging: Bulk
auf Bestellung 24430 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
2077+0.24 EUR
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BSP603S2LNT INFNS12252-1.pdf?t.download=true&u=5oefqw
BSP603S2LNT
Hersteller: Infineon Technologies
Description: N-CHANNEL POWER MOSFET
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 1390 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
Drain to Source Voltage (Vdss): 55 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: PG-SOT223-4-21
Vgs(th) (Max) @ Id: 2V @ 50µA
Power Dissipation (Max): 1.8W (Ta)
Rds On (Max) @ Id, Vgs: 33mOhm @ 2.6A, 10V
Current - Continuous Drain (Id) @ 25°C: 5.2A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Packaging: Bulk
auf Bestellung 29683 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
852+0.53 EUR
Mindestbestellmenge: 852 Stücke
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BSP60H6327XTSA1 bsp60_bsp61_bsp62.pdf?folderId=db3a30431441fb5d011445c30f210183&fileId=db3a30431441fb5d011445e1c2e7018a
BSP60H6327XTSA1
Hersteller: Infineon Technologies
Description: TRANS PNP DARL 45V 1A SOT223-4
Packaging: Bulk
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: PNP - Darlington
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.8V @ 1mA, 1A
Current - Collector Cutoff (Max): 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 2000 @ 500mA, 10V
Frequency - Transition: 200MHz
Supplier Device Package: PG-SOT223-4
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 1.5 W
auf Bestellung 7000 Stücke:
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AnzahlPreis
1575+0.29 EUR
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BSP 60 E6433 bsp60_bsp61_bsp62.pdf?folderId=db3a30431441fb5d011445c30f210183&fileId=db3a30431441fb5d011445e1c2e7018a
BSP 60 E6433
Hersteller: Infineon Technologies
Description: TRANS PNP DARL 45V 1A SOT223-4
Transistor Type: PNP - Darlington
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Packaging: Tape & Reel (TR)
Power - Max: 1.5 W
Voltage - Collector Emitter Breakdown (Max): 45 V
Current - Collector (Ic) (Max): 1 A
Supplier Device Package: PG-SOT223-4
Frequency - Transition: 200MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 2000 @ 500mA, 10V
Current - Collector Cutoff (Max): 10µA
Vce Saturation (Max) @ Ib, Ic: 1.8V @ 1mA, 1A
Operating Temperature: 150°C (TJ)
Produkt ist nicht verfügbar
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BSP61E6327HTSA1 bsp60_bsp61_bsp62.pdf?folderId=db3a30431441fb5d011445c30f210183&fileId=db3a30431441fb5d011445e1c2e7018a
BSP61E6327HTSA1
Hersteller: Infineon Technologies
Description: TRANS PNP DARL 60V 1A SOT223-4
Power - Max: 1.5 W
Voltage - Collector Emitter Breakdown (Max): 60 V
Current - Collector (Ic) (Max): 1 A
Part Status: Obsolete
Supplier Device Package: PG-SOT223-4
Frequency - Transition: 200MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 2000 @ 500mA, 10V
Current - Collector Cutoff (Max): 10µA
Vce Saturation (Max) @ Ib, Ic: 1.8V @ 1mA, 1A
Operating Temperature: 150°C (TJ)
Transistor Type: PNP - Darlington
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Packaging: Bulk
auf Bestellung 43880 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
1090+0.42 EUR
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BSP61E6327 INFNS10837-1.pdf?t.download=true&u=5oefqw
BSP61E6327
Hersteller: Infineon Technologies
Description: SMALL SIGNAL BIPOLAR TRANSISTOR
Part Status: Active
Supplier Device Package: PG-SOT223
Frequency - Transition: 200MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 2000 @ 500mA, 10V
Current - Collector Cutoff (Max): 10µA
Vce Saturation (Max) @ Ib, Ic: 1.8V @ 1mA, 1A
Operating Temperature: 150°C (TJ)
Power - Max: 1.5 W
Voltage - Collector Emitter Breakdown (Max): 60 V
Current - Collector (Ic) (Max): 1 A
Transistor Type: PNP - Darlington
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Packaging: Bulk
auf Bestellung 18000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
1598+0.32 EUR
Mindestbestellmenge: 1598 Stücke
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BFR 360L3E6765 INFNS10726-1.pdf?t.download=true&u=5oefqw
Hersteller: Infineon Technologies
Description: LOW-NOISE TRANSISTOR
Part Status: Active
Supplier Device Package: PG-TSLP-3-1
Noise Figure (dB Typ @ f): 1dB ~ 1.3dB @ 1.8GHz ~ 3GHz
Frequency - Transition: 14GHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 90 @ 15mA, 3V
Voltage - Collector Emitter Breakdown (Max): 6V
Current - Collector (Ic) (Max): 35mA
Power - Max: 210mW
Gain: 16dB
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: SC-101, SOT-883
Packaging: Bulk
auf Bestellung 15000 Stücke:
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AnzahlPreis
3073+0.18 EUR
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BFR360L3E6765 INFNS10726-1.pdf?t.download=true&u=5oefqw
BFR360L3E6765
Hersteller: Infineon Technologies
Description: LOW-NOISE SI TRANSISTOR
Part Status: Active
Supplier Device Package: PG-TSLP-3-1
Noise Figure (dB Typ @ f): 1dB ~ 1.3dB @ 1.8GHz ~ 3GHz
Frequency - Transition: 14GHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 90 @ 15mA, 3V
Voltage - Collector Emitter Breakdown (Max): 9V
Current - Collector (Ic) (Max): 35mA
Power - Max: 210mW
Gain: 11.5dB ~ 16dB
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: SC-101, SOT-883
Packaging: Bulk
auf Bestellung 41726 Stücke:
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AnzahlPreis
3073+0.18 EUR
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TC336LP32F200SAAKXUMA1 Infineon-TriCore_Family_BR-ProductBrochure-v01_00-EN.pdf?fileId=5546d4625d5945ed015dc81f47b436c7
Hersteller: Infineon Technologies
Description: AURIX 2G
Produkt ist nicht verfügbar
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IRLML6402TRPBF-1 IRLML6402PbF-1_10-28-14.pdf
Hersteller: Infineon Technologies
Description: MOSFET P-CH 20V 3.7A SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.7A (Ta)
Rds On (Max) @ Id, Vgs: 65mOhm @ 3.7A, 4.5V
Power Dissipation (Max): 1.3W (Ta)
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: Micro3™/SOT-23
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 633 pF @ 10 V
Produkt ist nicht verfügbar
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6MS24017E33W31361NOSA1
6MS24017E33W31361NOSA1
Hersteller: Infineon Technologies
Description: IGBT MODULE 1700V A-MS3-1
Produkt ist nicht verfügbar
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BAT18-05E6327 INFNS15701-1.pdf?t.download=true&u=5oefqw
Hersteller: Infineon Technologies
Description: PIN DIODE, 35V V(BR)
Current - Max: 100 mA
Part Status: Active
Supplier Device Package: PG-SOT23
Voltage - Peak Reverse (Max): 35V
Resistance @ If, F: 700mOhm @ 5mA, 200MHz
Capacitance @ Vr, F: 1pF @ 20V, 1MHz
Operating Temperature: 150°C (TJ)
Diode Type: PIN - 1 Pair Common Cathode
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Bulk
Produkt ist nicht verfügbar
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BAT1805E6327HTSA1 INFNS15701-1.pdf?t.download=true&u=5oefqw
BAT1805E6327HTSA1
Hersteller: Infineon Technologies
Description: RF DIODE 35V PG-SOT23
Current - Max: 100 mA
Part Status: Active
Supplier Device Package: PG-SOT23
Voltage - Peak Reverse (Max): 35V
Resistance @ If, F: 700mOhm @ 5mA, 200MHz
Capacitance @ Vr, F: 1pF @ 20V, 1MHz
Operating Temperature: 150°C (TJ)
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Bulk
auf Bestellung 47248 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
1181+0.38 EUR
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BAT1805E6327 INFNS15701-1.pdf?t.download=true&u=5oefqw
Hersteller: Infineon Technologies
Description: PIN DIODE, 35V V(BR)
Current - Reverse Leakage @ Vr: 20 nA @ 20 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Voltage - DC Reverse (Vr) (Max): 35 V
Part Status: Active
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: PG-SOT23
Current - Average Rectified (Io) (per Diode): 100mA (DC)
Diode Configuration: 1 Pair Common Cathode
Technology: Standard
Reverse Recovery Time (trr): 120 ns
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Bulk
Produkt ist nicht verfügbar
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IPZ60R037P7XKSA1
IPZ60R037P7XKSA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 650V 76A TO247-4
Power Dissipation (Max): 255W (Tc)
Rds On (Max) @ Id, Vgs: 37mOhm @ 29.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 76A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-4
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 5243 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 121 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: PG-TO247-4
Vgs(th) (Max) @ Id: 4V @ 1.48mA
auf Bestellung 938 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
53+9.59 EUR
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IPZ60R041P6FKSA1 Infineon-IPZ60R041P6-DS-v02_00-EN.pdf?fileId=5546d4624e765da5014ee36a7dc20200
IPZ60R041P6FKSA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 600V 77.5A TO247-4
Part Status: Obsolete
Supplier Device Package: PG-TO247-4
Vgs(th) (Max) @ Id: 4.5V @ 2.96mA
Power Dissipation (Max): 481W (Tc)
Rds On (Max) @ Id, Vgs: 41mOhm @ 35.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 77.5A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-4
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 8180 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
auf Bestellung 13435 Stücke:
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AnzahlPreis
45+11.03 EUR
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CY7C1412AV18-200BZC CY7C1425AV18%2C%20CY7C141%280%2C2%2C4%29AV18_8.pdf
CY7C1412AV18-200BZC
Hersteller: Infineon Technologies
Description: IC SRAM 36MBIT PARALLEL 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 36Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, QDR II
Clock Frequency: 200 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (15x17)
Memory Interface: Parallel
Memory Organization: 2M x 18
DigiKey Programmable: Not Verified
auf Bestellung 717 Stücke:
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AnzahlPreis
7+72.89 EUR
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CY7C1415BV18-200BZXC CY7C1411%2C13%2C15%2C26BV18.pdf
CY7C1415BV18-200BZXC
Hersteller: Infineon Technologies
Description: IC SRAM 36MBIT PARALLEL 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 36Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, QDR II
Clock Frequency: 200 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (15x17)
Memory Interface: Parallel
Memory Organization: 1M x 36
DigiKey Programmable: Not Verified
auf Bestellung 467 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
7+72.89 EUR
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CY7C1412BV18-167BZC CY7C141%282%2C4%29BV18_RevE.pdf
CY7C1412BV18-167BZC
Hersteller: Infineon Technologies
Description: IC SRAM 36MBIT PAR 165FBGA
Memory Format: SRAM
Clock Frequency: 167 MHz
Technology: SRAM - Synchronous, QDR II
Voltage - Supply: 1.7V ~ 1.9V
Operating Temperature: 0°C ~ 70°C (TA)
Memory Type: Volatile
Memory Size: 36Mbit
Mounting Type: Surface Mount
Package / Case: 165-LBGA
Packaging: Tray
DigiKey Programmable: Not Verified
Memory Organization: 2M x 18
Memory Interface: Parallel
Supplier Device Package: 165-FBGA (15x17)
auf Bestellung 273 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
7+73.93 EUR
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DT430N22KOFHPSA1
Hersteller: Infineon Technologies
Description: SCR MODULE PB60-1
Packaging: Tray
Part Status: Obsolete
Produkt ist nicht verfügbar
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IPP042N03L G INFNS16316-1.pdf?t.download=true&u=5oefqw
Hersteller: Infineon Technologies
Description: N-CHANNEL POWER MOSFET
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
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TLE4276DVNTMA1 Infineon-TLE4276-DS-v02_80-EN.pdf?fileId=5546d4626102d35a01612c4b988a6576
TLE4276DVNTMA1
Hersteller: Infineon Technologies
Description: IC REG LINEAR ADJ LDO REGULATOR
Current - Supply (Max): 25 mA
Protection Features: Antisaturation, Over Temperature, Reverse Polarity, Short Circuit
Voltage Dropout (Max): 0.5V @ 250mA
PSRR: 54dB (100Hz)
Part Status: Active
Control Features: Inhibit
Voltage - Output (Min/Fixed): 2.5V
Voltage - Output (Max): 20V
Supplier Device Package: PG-TO263-5-1
Number of Regulators: 1
Voltage - Input (Max): 40V
Current - Quiescent (Iq): 220 µA
Output Configuration: Positive
Operating Temperature: -40°C ~ 150°C (TJ)
Current - Output: 400mA
Mounting Type: Surface Mount
Output Type: Adjustable
Package / Case: TO-263-6, D²Pak (5 Leads + Tab), TO-263BA
Packaging: Bulk
Produkt ist nicht verfügbar
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IRFI4905 irfi4905.pdf
IRFI4905
Hersteller: Infineon Technologies
Description: MOSFET P-CH 55V 41A TO220AB FP
Input Capacitance (Ciss) (Max) @ Vds: 3400 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 180 nC @ 10 V
Drain to Source Voltage (Vdss): 55 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-220AB Full-Pak
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 63W (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ 22A, 10V
Current - Continuous Drain (Id) @ 25°C: 41A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
Produkt ist nicht verfügbar
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IRFC4905B
Hersteller: Infineon Technologies
Description: MOSFET 55V 42A DIE
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: Die
Rds On (Max) @ Id, Vgs: 20mOhm @ 42A, 10V
Current - Continuous Drain (Id) @ 25°C: 42A
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 55 V
Mounting Type: Surface Mount
Package / Case: Die
Packaging: Bulk
Produkt ist nicht verfügbar
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IR3889MTRPBFAUMA1 Infineon-IR3889MTRPBF-DataSheet-v02_03-EN.pdf?fileId=5546d4626b2d8e69016b6c1a8ae45608
IR3889MTRPBFAUMA1
Hersteller: Infineon Technologies
Description: IC REG BUCK ADJ 30A IQFN-36
Part Status: Active
Voltage - Output (Min/Fixed): 0.8V
Voltage - Input (Min): 2V
Voltage - Output (Max): 17V
Synchronous Rectifier: Yes
Supplier Device Package: PG-IQFN-36-2
Topology: Buck
Voltage - Input (Max): 17V
Frequency - Switching: 600kHz ~ 2MHz
Output Configuration: Positive
Operating Temperature: -40°C ~ 150°C (TJ)
Current - Output: 30A
Function: Step-Down
Number of Outputs: 1
Mounting Type: Surface Mount
Output Type: Adjustable
Package / Case: 36-PowerVFQFN
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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