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IPD50N06S3L-06 IPD50N06S3L-06 Infineon Technologies INFNS13305-1.pdf?t.download=true&u=5oefqw Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A
Supplier Device Package: PG-TO252-3-11
Part Status: Active
Drain to Source Voltage (Vdss): 55 V
Produkt ist nicht verfügbar
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IPI60R299CP IPI60R299CP Infineon Technologies INFNS16997-1.pdf?t.download=true&u=5oefqw Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 299mOhm @ 6.6A, 10V
Power Dissipation (Max): 96W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 440µA
Supplier Device Package: PG-TO262-3-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 100 V
auf Bestellung 8500 Stücke:
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251+2.11 EUR
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PMA5110 PMA5110 Infineon Technologies INFNS17057-1.pdf?t.download=true&u=5oefqw Description: 8-BIT FLASH MCU, 8051 CPU, 12MHZ
Packaging: Bulk
Package / Case: 38-TFSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Frequency: 315MHz, 434MHz, 868MHz, 915MHz
Memory Size: 6kB Flash, 12kB ROM, 256B RAM
Type: TxRx + MCU
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 1.9V ~ 3.6V
Power - Output: 10dBm
Data Rate (Max): 32kbps
Current - Transmitting: 8.9mA ~ 17.1mA
Supplier Device Package: PG-TSSOP-38
GPIO: 10
Modulation: ASK, FSK
RF Family/Standard: General ISM < 1GHz
Serial Interfaces: I²C, SPI
Part Status: Active
DigiKey Programmable: Not Verified
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162+3.1 EUR
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SGB10N60A SGB10N60A Infineon Technologies INFNS11217-1.pdf?t.download=true&u=5oefqw Description: IGBT, 20A, 600V, N-CHANNEL
Packaging: Bulk
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 10A
Supplier Device Package: PG-TO263-3-2
IGBT Type: NPT
Td (on/off) @ 25°C: 28ns/178ns
Switching Energy: 320µJ
Test Condition: 400V, 10A, 25Ohm, 15V
Gate Charge: 52 nC
Part Status: Active
Current - Collector (Ic) (Max): 20 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 40 A
Power - Max: 92 W
Produkt ist nicht verfügbar
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SAF-C161K-LMHA Infineon Technologies Infineon-C161KO-DS-v02_00-en[1].pdf?fileId=db3a304412b407950112b43a45456fc3 Description: IC MCU 16BIT ROMLESS 80MQFP
Packaging: Bulk
Package / Case: 80-QFP
Mounting Type: Surface Mount
Speed: 20MHz
RAM Size: 1K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External
Program Memory Type: ROMless
Core Processor: C166
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 4.5V ~ 5.5V
Connectivity: EBI/EMI, SPI, UART/USART
Peripherals: POR, PWM, WDT
Supplier Device Package: P-MQFP-80-1
Number of I/O: 63
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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SPB16N50C3 Infineon Technologies Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Part Status: Active
Produkt ist nicht verfügbar
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PEF20580FV3.1 PEF20580FV3.1 Infineon Technologies Description: LINE & PORT INTERFACE CONTROLLER
Packaging: Bulk
Part Status: Active
DigiKey Programmable: Not Verified
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SPB04N60C3E3045A SPB04N60C3E3045A Infineon Technologies Infineon-SPB03N60C3-DS-v02_05-en.pdf?t.download=true&u=5oefqw Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Part Status: Active
auf Bestellung 410 Stücke:
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348+1.29 EUR
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PEF2054NV1.0 Infineon Technologies Description: TIME SLOT ASSIGNER
Packaging: Bulk
Part Status: Active
auf Bestellung 3000 Stücke:
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34+13.39 EUR
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SKB15N60 SKB15N60 Infineon Technologies INFNS27336-1.pdf?t.download=true&u=5oefqw Description: IGBT, 31A, 600V, N-CHANNEL
Packaging: Bulk
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 279 ns
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 15A
Supplier Device Package: PG-TO263-3-2
IGBT Type: NPT
Td (on/off) @ 25°C: 32ns/234ns
Switching Energy: 570µJ
Test Condition: 400V, 15A, 21Ohm, 15V
Gate Charge: 76 nC
Part Status: Active
Current - Collector (Ic) (Max): 31 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 62 A
Power - Max: 139 W
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SPI20N60CFD SPI20N60CFD Infineon Technologies Infineon-SPP_I_A20N60C3-DS-v03_02-en.pdf?fileId=db3a304412b407950112b42d841f488f Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20.7A (Tc)
Rds On (Max) @ Id, Vgs: 220mOhm @ 13.1A, 10V
Power Dissipation (Max): 208W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: PG-TO262-3-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 124 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 25 V
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168+3.1 EUR
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SPI20N60CFDXKSA1 SPI20N60CFDXKSA1 Infineon Technologies Infineon-SPP_I_A20N60C3-DS-v03_02-en.pdf?fileId=db3a304412b407950112b42d841f488f Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Part Status: Active
auf Bestellung 7668 Stücke:
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110+4.17 EUR
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SPP04N60C2 SPP04N60C2 Infineon Technologies Infineon-SPP_A04N60C3-DS-v03_01-en.pdf?fileId=db3a304412b407950112b42dd6a14900 Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
Rds On (Max) @ Id, Vgs: 950mOhm @ 2.8A, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 200µA
Supplier Device Package: PG-TO220-3-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 22.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 580 pF @ 25 V
auf Bestellung 19000 Stücke:
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545+0.84 EUR
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TLE4928CHAMA1 TLE4928CHAMA1 Infineon Technologies TLE4928_PB.pdf?t.download=true&u=5oefqw Description: MAGNETIC SWITCH SPEED SENSOR
Packaging: Bulk
Package / Case: 3-SSIP Module
Polarization: North Pole, South Pole
Mounting Type: Through Hole
Technology: Hall Effect
Supplier Device Package: PG-SSO-3-9
Produkt ist nicht verfügbar
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SPP02N60C3IN SPP02N60C3IN Infineon Technologies Infineon-SPB04N60C3-DS-v02_05-en.pdf?fileId=db3a304412b407950112b42ddb2c4904 Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.8A (Tc)
Rds On (Max) @ Id, Vgs: 3Ohm @ 1.1A, 10V
Power Dissipation (Max): 25W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 80µA
Supplier Device Package: PG-TO220-3-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 12.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 200 pF @ 25 V
Produkt ist nicht verfügbar
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SPW11N60S5 SPW11N60S5 Infineon Technologies Infineon-SPW11N60C3-DS-v02_06-en.pdf?fileId=db3a304412b407950112b42d87b14893 Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 7A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 500µA
Supplier Device Package: PG-TO247-3-21
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1460 pF @ 25 V
auf Bestellung 13461 Stücke:
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140+3.25 EUR
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SPP02N60C3 SPP02N60C3 Infineon Technologies Infineon-SPP02N60C3-DS-v02_08-EN.pdf?fileId=db3a304412b407950112b42d5b09485f Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.8A (Tc)
Rds On (Max) @ Id, Vgs: 3Ohm @ 1.1A, 10V
Power Dissipation (Max): 25W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 80µA
Supplier Device Package: PG-TO220-3-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 12.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 200 pF @ 25 V
auf Bestellung 75534 Stücke:
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630+0.77 EUR
Mindestbestellmenge: 630
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SPW12N50C3IN SPW12N50C3IN Infineon Technologies Infineon-SPW12N50C3-DS-v02_05-en.pdf?t.download=true&u=5oefqw Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11.6A (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 7A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 500µA
Supplier Device Package: PG-TO247-3-21
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 25 V
Produkt ist nicht verfügbar
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EVAL2KW48VCHARP7TOBO1 EVAL2KW48VCHARP7TOBO1 Infineon Technologies Infineon-Applicationnote_EVAL_2KW_48V_CHAR_P7_2kw_battery_charger_CoolMOS-ApplicationNotes-v01_00-EN.pdf?fileId=5546d462696dbf120169ba1f4fa14b81 Description: EVAL COOLMOS P7 MOSFET
auf Bestellung 4 Stücke:
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EVALAUDAMP24TOBO1 EVALAUDAMP24TOBO1 Infineon Technologies Infineon-Evaluationboard_EVAL_AUDAMP24-ApplicationNotes-v01_00-EN.pdf?fileId=5546d462712ef9b701713070a36c08c4 Description: EVAL BOARD IGT40R070D1 E8220
Packaging: Box
Output Type: 2-Channel (Stereo)
Amplifier Type: Class D
Contents: Board(s)
Voltage - Supply: ±38V ~ 75V
Max Output Power x Channels @ Load: 250W x 2 @ 8Ohm
Board Type: Fully Populated
Utilized IC / Part: IGT40R070D1 E8220, IRS20957S
Supplied Contents: Board(s)
Part Status: Active
Produkt ist nicht verfügbar
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EVALAUDIOI2SCOM Infineon Technologies EVAL_AUDIO_I2S_COM-%20QSG_2-17-20.pdf Description: EVAL AUDIO MA12040P
Produkt ist nicht verfügbar
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BTS72004EPAXUMA1 BTS72004EPAXUMA1 Infineon Technologies Infineon-BTS7200-4EPA-DataSheet-v01_00-EN.pdf?fileId=5546d46270c4f93e0170e8a6ea220985 Description: IC 4CH HIGH SIDE SWITCH
Packaging: Tape & Reel (TR)
Package / Case: 14-TSSOP (0.154", 3.90mm Width) Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 66.5mOhm
Input Type: Non-Inverting
Voltage - Load: 6V ~ 18V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 1A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-TSDSO-14
Fault Protection: Over Current, Over Voltage, Short Circuit, UVLO
Grade: Automotive
Part Status: Active
Qualification: AEC-Q100
auf Bestellung 3000 Stücke:
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3000+1.43 EUR
Mindestbestellmenge: 3000
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IRF60SC241ARMA1 IRF60SC241ARMA1 Infineon Technologies Infineon-IRF60SC241-DataSheet-v01_00-EN.pdf?fileId=5546d4626b2d8e69016b533fb9af0ce7 Description: MOSFET N-CH 60V 360A TO263-7
Packaging: Tape & Reel (TR)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 360A (Tc)
Rds On (Max) @ Id, Vgs: 1.3mOhm @ 100A, 10V
Power Dissipation (Max): 2.4W (Ta), 417W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 250µA
Supplier Device Package: PG-TO263-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 388 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 16000 pF @ 30 V
Produkt ist nicht verfügbar
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IRF40SC240ARMA1 IRF40SC240ARMA1 Infineon Technologies Infineon-IRF40SC240-DataSheet-v01_00-EN.pdf?fileId=5546d4626b2d8e69016b533fa03b0ce4 Description: MOSFET N-CH 40V 360A TO263-7
Packaging: Tape & Reel (TR)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 360A (Tc)
Rds On (Max) @ Id, Vgs: 0.65mOhm @ 100A, 10V
Power Dissipation (Max): 2.4W (Ta), 417W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 250µA
Supplier Device Package: PG-TO263-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 458 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 18000 pF @ 20 V
Produkt ist nicht verfügbar
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IRF40SC240ARMA1 IRF40SC240ARMA1 Infineon Technologies Infineon-IRF40SC240-DataSheet-v01_00-EN.pdf?fileId=5546d4626b2d8e69016b533fa03b0ce4 Description: MOSFET N-CH 40V 360A TO263-7
Packaging: Cut Tape (CT)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 360A (Tc)
Rds On (Max) @ Id, Vgs: 0.65mOhm @ 100A, 10V
Power Dissipation (Max): 2.4W (Ta), 417W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 250µA
Supplier Device Package: PG-TO263-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 458 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 18000 pF @ 20 V
Produkt ist nicht verfügbar
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BTS72004EPAXUMA1 BTS72004EPAXUMA1 Infineon Technologies Infineon-BTS7200-4EPA-DataSheet-v01_00-EN.pdf?fileId=5546d46270c4f93e0170e8a6ea220985 Description: IC 4CH HIGH SIDE SWITCH
Packaging: Cut Tape (CT)
Package / Case: 14-TSSOP (0.154", 3.90mm Width) Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 66.5mOhm
Input Type: Non-Inverting
Voltage - Load: 6V ~ 18V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 1A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-TSDSO-14
Fault Protection: Over Current, Over Voltage, Short Circuit, UVLO
Grade: Automotive
Part Status: Active
Qualification: AEC-Q100
auf Bestellung 8625 Stücke:
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7+2.85 EUR
10+2.09 EUR
25+1.91 EUR
100+1.7 EUR
250+1.6 EUR
500+1.54 EUR
1000+1.49 EUR
Mindestbestellmenge: 7
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ISZ040N03L5ISATMA1 ISZ040N03L5ISATMA1 Infineon Technologies Infineon-ISZ040N03L5IS-DataSheet-v02_00-EN.pdf?fileId=5546d46270c4f93e0170e8d91c970997 Description: MOSFET N-CH 30V 18A/40A TSDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 30A, 10V
Power Dissipation (Max): 2.1W (Ta), 37W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TSDSON-8-FL
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 15 V
Produkt ist nicht verfügbar
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ISZ040N03L5ISATMA1 ISZ040N03L5ISATMA1 Infineon Technologies Infineon-ISZ040N03L5IS-DataSheet-v02_00-EN.pdf?fileId=5546d46270c4f93e0170e8d91c970997 Description: MOSFET N-CH 30V 18A/40A TSDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 30A, 10V
Power Dissipation (Max): 2.1W (Ta), 37W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TSDSON-8-FL
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 15 V
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IRF7313TRPBF-1 IRF7313TRPBF-1 Infineon Technologies IRF7313PbF-1_11-14-13.pdf Description: MOSFET 2N-CH 30V 6.5A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W (Ta)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 6.5A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 650pF @ 25V
Rds On (Max) @ Id, Vgs: 29mOhm @ 5.8A, 10V
Gate Charge (Qg) (Max) @ Vgs: 33nC @ 10V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Obsolete
Produkt ist nicht verfügbar
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BTF3080EJDEMOBOARDTOBO1 BTF3080EJDEMOBOARDTOBO1 Infineon Technologies Infineon-Demoboard_BTFxxxEJ-UserManual-v01_00-EN.pdf?fileId=5546d462712ef9b701712fc897870114 Description: BTF3080EJ DEMOBOARD
Packaging: Bulk
Function: Switch
Type: Power Management
Contents: Board(s)
Utilized IC / Part: BTF3080EJ
Platform: Arduino
Part Status: Active
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IPB60R045P7ATMA1 IPB60R045P7ATMA1 Infineon Technologies Infineon-IPB60R045P7-DS-v02_00-EN.pdf?fileId=5546d462696dbf120169b48707f64aad Description: MOSFET N-CH 600V 61A TO263-3-2
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 61A (Tc)
Rds On (Max) @ Id, Vgs: 45mOhm @ 22.5A, 10V
Power Dissipation (Max): 201W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1.08mA
Supplier Device Package: PG-TO263-3-2
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3891 pF @ 400 V
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IPZA60R045P7XKSA1 IPZA60R045P7XKSA1 Infineon Technologies Infineon-IPZA60R045P7-DS-v02_00-EN.pdf?fileId=5546d462696dbf120169b454244a483a Description: MOSFET N-CH 650V 61A TO247-4-3
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 61A (Tc)
Rds On (Max) @ Id, Vgs: 45mOhm @ 22.5A, 10V
Power Dissipation (Max): 201W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1.08mA
Supplier Device Package: PG-TO247-4-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3891 pF @ 400 V
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PMB7720HV1.4510PCC Infineon Technologies Description: PMB7720HV DECT IC
Packaging: Bulk
Part Status: Active
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BFG 193 E6433 BFG 193 E6433 Infineon Technologies BFG193.pdf Description: RF TRANS NPN 12V 8GHZ SOT-223-4
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 10.5dB ~ 16dB
Power - Max: 600mW
Current - Collector (Ic) (Max): 80mA
Voltage - Collector Emitter Breakdown (Max): 12V
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 30mA, 8V
Frequency - Transition: 8GHz
Noise Figure (dB Typ @ f): 1dB ~ 1.6dB @ 900MHz ~ 1.8GHz
Supplier Device Package: PG-SOT223-4
Part Status: Obsolete
Produkt ist nicht verfügbar
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BTS4880RNT Infineon Technologies Description: IC PWR SWITCH N-CHAN 1:1 DSO-36
Packaging: Tape & Reel (TR)
Features: Auto Restart, Status Flag
Package / Case: 36-BSSOP (0.433", 11.00mm Width) Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 8
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -25°C ~ 125°C (TJ)
Output Configuration: High Side
Rds On (Typ): 150mOhm
Input Type: Non-Inverting
Voltage - Load: 11V ~ 45V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 625mA
Ratio - Input:Output: 1:1
Supplier Device Package: PG-DSO-36-26
Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage
Part Status: Obsolete
Produkt ist nicht verfügbar
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IRF6216TRPBF-1 IRF6216TRPBF-1 Infineon Technologies IRF6216PBF-1_7-30-14.pdf Description: MOSFET P-CH 150V 2.2A SOT223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.2A (Ta)
Rds On (Max) @ Id, Vgs: 240mOhm @ 1.3A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: SOT-223
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1280 pF @ 25 V
Produkt ist nicht verfügbar
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BC847CWH6327 Infineon Technologies INFNS16507-1.pdf?t.download=true&u=5oefqw Description: TRANS NPN 45V 0.1A SOT323-3
Packaging: Bulk
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V
Frequency - Transition: 250MHz
Supplier Device Package: PG-SOT323-3-1
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 250 mW
Produkt ist nicht verfügbar
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BC 847C E6433 BC 847C E6433 Infineon Technologies INFNS14907-1.pdf?t.download=true&u=5oefqw Description: TRANS NPN 45V 0.1A SOT23
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BC847C-B5000 BC847C-B5000 Infineon Technologies SIEMD095-475.pdf?t.download=true&u=5oefqw Description: TRANS NPN 45V 0.1A PG-SOT23-3-1
Packaging: Bulk
Part Status: Active
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V
Frequency - Transition: 250MHz
Supplier Device Package: PG-SOT23-3-1
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 330 mW
Qualification: AEC-Q101
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8955+0.046 EUR
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MMBT3904LT1 MMBT3904LT1 Infineon Technologies ONSMS30148-1.pdf?hkey=EC6BD57738AE6E33B588C5F9AD3CEFA7 Description: TRANS NPN 40V 200MA SOT23-3
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EVALPSE1BF12SICTOBO1 EVALPSE1BF12SICTOBO1 Infineon Technologies Infineon-Evaluation_Board_for_CoolSiC_Easy1B_half-bridge_modules-ApplicationNotes-v02_00-EN.pdf?fileId=5546d4625f2e26bc015f48bf26213c81 Description: EVAL BOARD FOR FF11MR12W1M1_B11
Packaging: Bulk
Function: Solar Charger, LED Driver
Type: Reference Design
Utilized IC / Part: FF11MR12W1M1_B11, FF23MR12W1M1_B11
Supplied Contents: Board(s)
Part Status: Active
Contents: Board(s)
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BCR 146F E6327 BCR 146F E6327 Infineon Technologies bcr146series.pdf?folderId=db3a30431400ef68011406f3ddb1012e&fileId=db3a30431428a373011440120c6802b7 Description: TRANS PREBIAS NPN 50V TSFP-3
Packaging: Tape & Reel (TR)
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 5mA, 5V
Supplier Device Package: PG-TSFP-3
Current - Collector (Ic) (Max): 70 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 250 mW
Frequency - Transition: 150 MHz
Resistor - Base (R1): 47 kOhms
Resistor - Emitter Base (R2): 22 kOhms
Resistors Included: R1 and R2
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IRF7769L1TRPBFTR Infineon Technologies INFN-S-A0002806797-1.pdf?t.download=true&u=5oefqw Description: N-CHANNEL POWER MOSFET
Produkt ist nicht verfügbar
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IPT020N10N3ATMA1 IPT020N10N3ATMA1 Infineon Technologies IPT020N10N3_Rev1.1.pdf?folderId=db3a304313b8b5a60113cee8763b02d7&fileId=db3a30433e9d5d11013e9e58035b0158 Description: MOSFET N-CH 100V 300A 8HSOF
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 300A (Tc)
Rds On (Max) @ Id, Vgs: 2mOhm @ 150A, 10V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 272µA
Supplier Device Package: PG-HSOF-8-1
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 156 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11200 pF @ 50 V
auf Bestellung 9574 Stücke:
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3+7.76 EUR
10+5.17 EUR
100+3.69 EUR
500+3.51 EUR
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TLE5309DE5201XUMA1 TLE5309DE5201XUMA1 Infineon Technologies TLE5309D.pdf Description: POSITION&CURRENT SENSORS
Packaging: Cut Tape (CT)
Package / Case: 16-TSSOP (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Output: Analog Voltage
Operating Temperature: -40°C ~ 125°C (TA)
Termination Style: Gull Wing
Voltage - Supply: 3V ~ 3.6V, 4.5V ~ 5.5V
Actuator Type: External Magnet, Not Included
Technology: Magnetoresistive
For Measuring: Angle
Supplier Device Package: PG-TDSO-16
Rotation Angle - Electrical, Mechanical: 0° ~ 360°, Continuous
Output Signal: Cosine, Sine
Part Status: Active
Grade: Automotive
Qualification: AEC-Q100
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TLE5309DE1211XUMA1 TLE5309DE1211XUMA1 Infineon Technologies TLE5309D.pdf Description: IC ANGLE SENSOR ANLG TDSO16
Packaging: Cut Tape (CT)
Package / Case: 16-TSSOP (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Output: Analog Voltage
Operating Temperature: -40°C ~ 125°C (TA)
Termination Style: Gull Wing
Voltage - Supply: 3V ~ 3.6V, 4.5V ~ 5.5V
Actuator Type: External Magnet, Not Included
Technology: Magnetoresistive
For Measuring: Angle
Supplier Device Package: PG-TDSO-16
Rotation Angle - Electrical, Mechanical: 0° ~ 360°, Continuous
Output Signal: Cosine, Sine
Grade: Automotive
Part Status: Active
Qualification: AEC-Q100
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5+8.42 EUR
10+8.07 EUR
25+7.65 EUR
50+7.37 EUR
100+7.11 EUR
500+6.74 EUR
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KP215F1701PS2GOKITTOBO1 KP215F1701PS2GOKITTOBO1 Infineon Technologies Infineon-PS2GO_MS2Go_How_to_use_June2019-UserManual-v01_00-EN.pdf?fileId=5546d4626b2d8e69016b6b47f3fd5a18 Description: MAP PRESSURE SENSOR 2GO KIT
Packaging: Box
Sensitivity: ±1.4kPa
Interface: Analog
Voltage - Supply: 4.5V ~ 5.5V
Sensor Type: Pressure
Utilized IC / Part: KP215F1701
Supplied Contents: Board(s)
Embedded: Yes, MCU, 32-Bit
Sensing Range: 10 ~ 115kPa
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BTT62004ESAXUMA1 BTT62004ESAXUMA1 Infineon Technologies Infineon-BTT6200-4ESA-DS-v01_00-EN.pdf?fileId=5546d46269e1c019016a22035b660d8d Description: IC PWR SWTCH N-CHAN 1:1 TSDSO-24
Packaging: Tape & Reel (TR)
Package / Case: 24-TSSOP (0.154", 3.90mm Width) Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 4
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 200mOhm
Input Type: Non-Inverting
Voltage - Load: 5V ~ 36V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 1A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-TSDSO-24-21
Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, Over Voltage
Part Status: Active
Grade: Automotive
Qualification: AEC-Q100
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XMC4108-Q48K64AB XMC4108-Q48K64AB Infineon Technologies INFN-S-A0006625596-1.pdf?t.download=true&u=5oefqw Description: 32-BIT MCU XMC4000 ARM CORTEX-M4
Packaging: Bulk
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 80MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 20K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M4
Data Converters: A/D 9x12b SAR; D/A 2x12b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 3.13V ~ 3.63V
Connectivity: CANbus, I²C, LINbus, SPI, UART/USART
Peripherals: DMA, I²S, POR, PWM, WDT
Supplier Device Package: 48-VQFN (7x7)
Part Status: Active
Number of I/O: 30
DigiKey Programmable: Not Verified
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XMC4504-F100F512AB XMC4504-F100F512AB Infineon Technologies INFNS27688-1.pdf?t.download=true&u=5oefqw Description: 32-BIT MCU XMC4000 ARM CORTEX-M4
Packaging: Bulk
Package / Case: 100-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 120MHz
Program Memory Size: 512KB (512K x 8)
RAM Size: 128K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M4
Data Converters: A/D 20x12b; D/A 2x12b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 3.13V ~ 3.63V
Connectivity: CANbus, EBI/EMI, I²C, LINbus, SPI, UART/USART, USB, USB OTG
Peripherals: DMA, I²S, LED, POR, PWM, WDT
Supplier Device Package: PG-LQFP-100-25
Part Status: Active
Number of I/O: 55
DigiKey Programmable: Not Verified
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XMC4500F100F768ACXQMA Infineon Technologies Description: 32-BIT MCU XMC4000 ARM CORTEX-M4
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XMC4504-F144F512AB XMC4504-F144F512AB Infineon Technologies INFNS27688-1.pdf?t.download=true&u=5oefqw Description: 32-BIT MCU XMC4000 ARM CORTEX-M4
Packaging: Bulk
Package / Case: 144-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 120MHz
Program Memory Size: 512KB (512K x 8)
RAM Size: 128K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M4
Data Converters: A/D 28x12b; D/A 2x12b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 3.13V ~ 3.63V
Connectivity: CANbus, EBI/EMI, I²C, LINbus, SPI, UART/USART, USB, USB OTG
Peripherals: DMA, I²S, LED, POR, PWM, WDT
Supplier Device Package: PG-LQFP-144-24
Part Status: Active
Number of I/O: 91
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XMC4504-F100K512AB XMC4504-F100K512AB Infineon Technologies INFNS27688-1.pdf?t.download=true&u=5oefqw Description: 32-BIT MCU XMC4000 ARM CORTEX-M4
Packaging: Bulk
Package / Case: 100-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 120MHz
Program Memory Size: 512KB (512K x 8)
RAM Size: 128K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M4
Data Converters: A/D 20x12b; D/A 2x12b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 3.13V ~ 3.63V
Connectivity: CANbus, EBI/EMI, I²C, LINbus, SPI, UART/USART, USB, USB OTG
Peripherals: DMA, I²S, LED, POR, PWM, WDT
Supplier Device Package: PG-LQFP-100-25
Part Status: Active
Number of I/O: 55
DigiKey Programmable: Not Verified
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XMC4500F144F1024AB XMC4500F144F1024AB Infineon Technologies INFNS27688-1.pdf?t.download=true&u=5oefqw Description: 32-BIT MCU XMC4000 ARM CORTEX-M4
Packaging: Bulk
Package / Case: 144-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 120MHz
Program Memory Size: 1MB (1M x 8)
RAM Size: 160K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M4
Data Converters: A/D 28x12b; D/A 2x12b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 3.13V ~ 3.63V
Connectivity: CANbus, EBI/EMI, I²C, LINbus, SPI, UART/USART, USB, USB OTG
Peripherals: DMA, I²S, LED, POR, PWM, WDT
Supplier Device Package: PG-LQFP-144-24
Part Status: Active
Number of I/O: 91
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XMC4108Q48K64BAXUMA1 XMC4108Q48K64BAXUMA1 Infineon Technologies Infineon-XMC4100_XMC4200_DS-DS-v01_04-EN.pdf?fileId=5546d462696dbf120169817056f938ff Description: IC MCU 32BIT 64KB FLASH 48VQFN
Packaging: Tape & Reel (TR)
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 80MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 20K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M4
Data Converters: A/D 9x12b; D/A 2x12b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 3.13V ~ 3.63V
Connectivity: CANbus, I2C, LINbus, SPI, UART/USART, USB
Peripherals: DMA, I2S, LED, POR, PWM, WDT
Supplier Device Package: PG-VQFN-48-53
Number of I/O: 21
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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XMC4108Q48K64BAXUMA1 XMC4108Q48K64BAXUMA1 Infineon Technologies Infineon-XMC4100_XMC4200_DS-DS-v01_04-EN.pdf?fileId=5546d462696dbf120169817056f938ff Description: IC MCU 32BIT 64KB FLASH 48VQFN
Packaging: Cut Tape (CT)
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 80MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 20K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M4
Data Converters: A/D 9x12b; D/A 2x12b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 3.13V ~ 3.63V
Connectivity: CANbus, I2C, LINbus, SPI, UART/USART, USB
Peripherals: DMA, I2S, LED, POR, PWM, WDT
Supplier Device Package: PG-VQFN-48-53
Number of I/O: 21
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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XMC4100Q48K128ABXUMA1 XMC4100Q48K128ABXUMA1 Infineon Technologies Infineon-XMC4100_XMC4200_DS-DS-v01_04-EN.pdf?fileId=5546d462696dbf120169817056f938ff Description: IC MCU 32BIT 128KB FLASH 48VQFN
Packaging: Cut Tape (CT)
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 80MHz
Program Memory Size: 128KB (128K x 8)
RAM Size: 20K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M4
Data Converters: A/D 9x12b; D/A 2x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 3.13V ~ 3.63V
Connectivity: CANbus, I²C, LINbus, SPI, UART/USART, USB
Peripherals: DMA, I²S, LED, POR, PWM, WDT
Supplier Device Package: PG-VQFN-48-22
Part Status: Discontinued at Digi-Key
Number of I/O: 21
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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MB89567ACPFV-GS-318E1 Infineon Technologies ProductGuide_2008.1.pdf Description: IC MCU 8BIT 32KB MROM 80LQFP
Packaging: Tray
Package / Case: 80-LQFP
Mounting Type: Surface Mount
Speed: 12.5MHz
Program Memory Size: 32KB (32K x 8)
RAM Size: 1K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External
Program Memory Type: Mask ROM
Core Processor: F²MC-8L
Data Converters: A/D 8x10b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 2.2V ~ 5.5V
Connectivity: I²C, Serial I/O, UART/USART
Peripherals: LCD, POR, PWM, WDT
Supplier Device Package: 80-LQFP (12x12)
Part Status: Obsolete
Number of I/O: 50
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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IRF3546MTRPBF IRF3546MTRPBF Infineon Technologies irf3546m.pdf?fileId=5546d462533600a4015355df3145191e Description: MOSFET 4N-CH 25V 16A 41QFN
Packaging: Bulk
Package / Case: 41-PowerVFQFN
Mounting Type: Surface Mount
Configuration: 4 N-Channel
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 25V
Current - Continuous Drain (Id) @ 25°C: 16A (Tc), 20A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1310pF @ 13V
Rds On (Max) @ Id, Vgs: 3.9mOhm @ 27A, 10V
Gate Charge (Qg) (Max) @ Vgs: 15nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.1V @ 35µA
Supplier Device Package: 41-PQFN (6x8)
Part Status: Obsolete
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
71+6.46 EUR
Mindestbestellmenge: 71
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IPA032N06N3 G IPA032N06N3 G Infineon Technologies INFNS27812-1.pdf?t.download=true&u=5oefqw Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 84A (Tc)
Rds On (Max) @ Id, Vgs: 3.2mOhm @ 80A, 10V
Power Dissipation (Max): 41W (Tc)
Vgs(th) (Max) @ Id: 4V @ 118µA
Supplier Device Package: PG-TO220-3-111
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 165 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13000 pF @ 30 V
Produkt ist nicht verfügbar
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IPD50N06S3L-06 INFNS13305-1.pdf?t.download=true&u=5oefqw
IPD50N06S3L-06
Hersteller: Infineon Technologies
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A
Supplier Device Package: PG-TO252-3-11
Part Status: Active
Drain to Source Voltage (Vdss): 55 V
Produkt ist nicht verfügbar
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IPI60R299CP INFNS16997-1.pdf?t.download=true&u=5oefqw
IPI60R299CP
Hersteller: Infineon Technologies
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 299mOhm @ 6.6A, 10V
Power Dissipation (Max): 96W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 440µA
Supplier Device Package: PG-TO262-3-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 100 V
auf Bestellung 8500 Stücke:
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Anzahl Preis
251+2.11 EUR
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PMA5110 INFNS17057-1.pdf?t.download=true&u=5oefqw
PMA5110
Hersteller: Infineon Technologies
Description: 8-BIT FLASH MCU, 8051 CPU, 12MHZ
Packaging: Bulk
Package / Case: 38-TFSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Frequency: 315MHz, 434MHz, 868MHz, 915MHz
Memory Size: 6kB Flash, 12kB ROM, 256B RAM
Type: TxRx + MCU
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 1.9V ~ 3.6V
Power - Output: 10dBm
Data Rate (Max): 32kbps
Current - Transmitting: 8.9mA ~ 17.1mA
Supplier Device Package: PG-TSSOP-38
GPIO: 10
Modulation: ASK, FSK
RF Family/Standard: General ISM < 1GHz
Serial Interfaces: I²C, SPI
Part Status: Active
DigiKey Programmable: Not Verified
auf Bestellung 2932 Stücke:
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Anzahl Preis
162+3.1 EUR
Mindestbestellmenge: 162
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SGB10N60A INFNS11217-1.pdf?t.download=true&u=5oefqw
SGB10N60A
Hersteller: Infineon Technologies
Description: IGBT, 20A, 600V, N-CHANNEL
Packaging: Bulk
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 10A
Supplier Device Package: PG-TO263-3-2
IGBT Type: NPT
Td (on/off) @ 25°C: 28ns/178ns
Switching Energy: 320µJ
Test Condition: 400V, 10A, 25Ohm, 15V
Gate Charge: 52 nC
Part Status: Active
Current - Collector (Ic) (Max): 20 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 40 A
Power - Max: 92 W
Produkt ist nicht verfügbar
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SAF-C161K-LMHA Infineon-C161KO-DS-v02_00-en[1].pdf?fileId=db3a304412b407950112b43a45456fc3
Hersteller: Infineon Technologies
Description: IC MCU 16BIT ROMLESS 80MQFP
Packaging: Bulk
Package / Case: 80-QFP
Mounting Type: Surface Mount
Speed: 20MHz
RAM Size: 1K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External
Program Memory Type: ROMless
Core Processor: C166
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 4.5V ~ 5.5V
Connectivity: EBI/EMI, SPI, UART/USART
Peripherals: POR, PWM, WDT
Supplier Device Package: P-MQFP-80-1
Number of I/O: 63
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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SPB16N50C3
Hersteller: Infineon Technologies
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Part Status: Active
Produkt ist nicht verfügbar
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PEF20580FV3.1
PEF20580FV3.1
Hersteller: Infineon Technologies
Description: LINE & PORT INTERFACE CONTROLLER
Packaging: Bulk
Part Status: Active
DigiKey Programmable: Not Verified
auf Bestellung 4001 Stücke:
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Anzahl Preis
23+20 EUR
Mindestbestellmenge: 23
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SPB04N60C3E3045A Infineon-SPB03N60C3-DS-v02_05-en.pdf?t.download=true&u=5oefqw
SPB04N60C3E3045A
Hersteller: Infineon Technologies
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Part Status: Active
auf Bestellung 410 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
348+1.29 EUR
Mindestbestellmenge: 348
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PEF2054NV1.0
Hersteller: Infineon Technologies
Description: TIME SLOT ASSIGNER
Packaging: Bulk
Part Status: Active
auf Bestellung 3000 Stücke:
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Anzahl Preis
34+13.39 EUR
Mindestbestellmenge: 34
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SKB15N60 INFNS27336-1.pdf?t.download=true&u=5oefqw
SKB15N60
Hersteller: Infineon Technologies
Description: IGBT, 31A, 600V, N-CHANNEL
Packaging: Bulk
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 279 ns
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 15A
Supplier Device Package: PG-TO263-3-2
IGBT Type: NPT
Td (on/off) @ 25°C: 32ns/234ns
Switching Energy: 570µJ
Test Condition: 400V, 15A, 21Ohm, 15V
Gate Charge: 76 nC
Part Status: Active
Current - Collector (Ic) (Max): 31 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 62 A
Power - Max: 139 W
auf Bestellung 304 Stücke:
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Anzahl Preis
171+2.82 EUR
Mindestbestellmenge: 171
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SPI20N60CFD Infineon-SPP_I_A20N60C3-DS-v03_02-en.pdf?fileId=db3a304412b407950112b42d841f488f
SPI20N60CFD
Hersteller: Infineon Technologies
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20.7A (Tc)
Rds On (Max) @ Id, Vgs: 220mOhm @ 13.1A, 10V
Power Dissipation (Max): 208W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: PG-TO262-3-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 124 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 25 V
auf Bestellung 168 Stücke:
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Anzahl Preis
168+3.1 EUR
Mindestbestellmenge: 168
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SPI20N60CFDXKSA1 Infineon-SPP_I_A20N60C3-DS-v03_02-en.pdf?fileId=db3a304412b407950112b42d841f488f
SPI20N60CFDXKSA1
Hersteller: Infineon Technologies
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Part Status: Active
auf Bestellung 7668 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
110+4.17 EUR
Mindestbestellmenge: 110
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SPP04N60C2 Infineon-SPP_A04N60C3-DS-v03_01-en.pdf?fileId=db3a304412b407950112b42dd6a14900
SPP04N60C2
Hersteller: Infineon Technologies
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
Rds On (Max) @ Id, Vgs: 950mOhm @ 2.8A, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 200µA
Supplier Device Package: PG-TO220-3-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 22.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 580 pF @ 25 V
auf Bestellung 19000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
545+0.84 EUR
Mindestbestellmenge: 545
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TLE4928CHAMA1 TLE4928_PB.pdf?t.download=true&u=5oefqw
TLE4928CHAMA1
Hersteller: Infineon Technologies
Description: MAGNETIC SWITCH SPEED SENSOR
Packaging: Bulk
Package / Case: 3-SSIP Module
Polarization: North Pole, South Pole
Mounting Type: Through Hole
Technology: Hall Effect
Supplier Device Package: PG-SSO-3-9
Produkt ist nicht verfügbar
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SPP02N60C3IN Infineon-SPB04N60C3-DS-v02_05-en.pdf?fileId=db3a304412b407950112b42ddb2c4904
SPP02N60C3IN
Hersteller: Infineon Technologies
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.8A (Tc)
Rds On (Max) @ Id, Vgs: 3Ohm @ 1.1A, 10V
Power Dissipation (Max): 25W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 80µA
Supplier Device Package: PG-TO220-3-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 12.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 200 pF @ 25 V
Produkt ist nicht verfügbar
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SPW11N60S5 Infineon-SPW11N60C3-DS-v02_06-en.pdf?fileId=db3a304412b407950112b42d87b14893
SPW11N60S5
Hersteller: Infineon Technologies
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 7A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 500µA
Supplier Device Package: PG-TO247-3-21
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1460 pF @ 25 V
auf Bestellung 13461 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
140+3.25 EUR
Mindestbestellmenge: 140
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SPP02N60C3 Infineon-SPP02N60C3-DS-v02_08-EN.pdf?fileId=db3a304412b407950112b42d5b09485f
SPP02N60C3
Hersteller: Infineon Technologies
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.8A (Tc)
Rds On (Max) @ Id, Vgs: 3Ohm @ 1.1A, 10V
Power Dissipation (Max): 25W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 80µA
Supplier Device Package: PG-TO220-3-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 12.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 200 pF @ 25 V
auf Bestellung 75534 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
630+0.77 EUR
Mindestbestellmenge: 630
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SPW12N50C3IN Infineon-SPW12N50C3-DS-v02_05-en.pdf?t.download=true&u=5oefqw
SPW12N50C3IN
Hersteller: Infineon Technologies
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11.6A (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 7A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 500µA
Supplier Device Package: PG-TO247-3-21
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 25 V
Produkt ist nicht verfügbar
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EVAL2KW48VCHARP7TOBO1 Infineon-Applicationnote_EVAL_2KW_48V_CHAR_P7_2kw_battery_charger_CoolMOS-ApplicationNotes-v01_00-EN.pdf?fileId=5546d462696dbf120169ba1f4fa14b81
EVAL2KW48VCHARP7TOBO1
Hersteller: Infineon Technologies
Description: EVAL COOLMOS P7 MOSFET
auf Bestellung 4 Stücke:
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EVALAUDAMP24TOBO1 Infineon-Evaluationboard_EVAL_AUDAMP24-ApplicationNotes-v01_00-EN.pdf?fileId=5546d462712ef9b701713070a36c08c4
EVALAUDAMP24TOBO1
Hersteller: Infineon Technologies
Description: EVAL BOARD IGT40R070D1 E8220
Packaging: Box
Output Type: 2-Channel (Stereo)
Amplifier Type: Class D
Contents: Board(s)
Voltage - Supply: ±38V ~ 75V
Max Output Power x Channels @ Load: 250W x 2 @ 8Ohm
Board Type: Fully Populated
Utilized IC / Part: IGT40R070D1 E8220, IRS20957S
Supplied Contents: Board(s)
Part Status: Active
Produkt ist nicht verfügbar
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EVALAUDIOI2SCOM EVAL_AUDIO_I2S_COM-%20QSG_2-17-20.pdf
Hersteller: Infineon Technologies
Description: EVAL AUDIO MA12040P
Produkt ist nicht verfügbar
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BTS72004EPAXUMA1 Infineon-BTS7200-4EPA-DataSheet-v01_00-EN.pdf?fileId=5546d46270c4f93e0170e8a6ea220985
BTS72004EPAXUMA1
Hersteller: Infineon Technologies
Description: IC 4CH HIGH SIDE SWITCH
Packaging: Tape & Reel (TR)
Package / Case: 14-TSSOP (0.154", 3.90mm Width) Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 66.5mOhm
Input Type: Non-Inverting
Voltage - Load: 6V ~ 18V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 1A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-TSDSO-14
Fault Protection: Over Current, Over Voltage, Short Circuit, UVLO
Grade: Automotive
Part Status: Active
Qualification: AEC-Q100
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+1.43 EUR
Mindestbestellmenge: 3000
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IRF60SC241ARMA1 Infineon-IRF60SC241-DataSheet-v01_00-EN.pdf?fileId=5546d4626b2d8e69016b533fb9af0ce7
IRF60SC241ARMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 60V 360A TO263-7
Packaging: Tape & Reel (TR)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 360A (Tc)
Rds On (Max) @ Id, Vgs: 1.3mOhm @ 100A, 10V
Power Dissipation (Max): 2.4W (Ta), 417W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 250µA
Supplier Device Package: PG-TO263-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 388 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 16000 pF @ 30 V
Produkt ist nicht verfügbar
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IRF40SC240ARMA1 Infineon-IRF40SC240-DataSheet-v01_00-EN.pdf?fileId=5546d4626b2d8e69016b533fa03b0ce4
IRF40SC240ARMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 40V 360A TO263-7
Packaging: Tape & Reel (TR)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 360A (Tc)
Rds On (Max) @ Id, Vgs: 0.65mOhm @ 100A, 10V
Power Dissipation (Max): 2.4W (Ta), 417W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 250µA
Supplier Device Package: PG-TO263-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 458 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 18000 pF @ 20 V
Produkt ist nicht verfügbar
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IRF40SC240ARMA1 Infineon-IRF40SC240-DataSheet-v01_00-EN.pdf?fileId=5546d4626b2d8e69016b533fa03b0ce4
IRF40SC240ARMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 40V 360A TO263-7
Packaging: Cut Tape (CT)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 360A (Tc)
Rds On (Max) @ Id, Vgs: 0.65mOhm @ 100A, 10V
Power Dissipation (Max): 2.4W (Ta), 417W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 250µA
Supplier Device Package: PG-TO263-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 458 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 18000 pF @ 20 V
Produkt ist nicht verfügbar
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BTS72004EPAXUMA1 Infineon-BTS7200-4EPA-DataSheet-v01_00-EN.pdf?fileId=5546d46270c4f93e0170e8a6ea220985
BTS72004EPAXUMA1
Hersteller: Infineon Technologies
Description: IC 4CH HIGH SIDE SWITCH
Packaging: Cut Tape (CT)
Package / Case: 14-TSSOP (0.154", 3.90mm Width) Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 66.5mOhm
Input Type: Non-Inverting
Voltage - Load: 6V ~ 18V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 1A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-TSDSO-14
Fault Protection: Over Current, Over Voltage, Short Circuit, UVLO
Grade: Automotive
Part Status: Active
Qualification: AEC-Q100
auf Bestellung 8625 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
7+2.85 EUR
10+2.09 EUR
25+1.91 EUR
100+1.7 EUR
250+1.6 EUR
500+1.54 EUR
1000+1.49 EUR
Mindestbestellmenge: 7
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ISZ040N03L5ISATMA1 Infineon-ISZ040N03L5IS-DataSheet-v02_00-EN.pdf?fileId=5546d46270c4f93e0170e8d91c970997
ISZ040N03L5ISATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 30V 18A/40A TSDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 30A, 10V
Power Dissipation (Max): 2.1W (Ta), 37W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TSDSON-8-FL
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 15 V
Produkt ist nicht verfügbar
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ISZ040N03L5ISATMA1 Infineon-ISZ040N03L5IS-DataSheet-v02_00-EN.pdf?fileId=5546d46270c4f93e0170e8d91c970997
ISZ040N03L5ISATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 30V 18A/40A TSDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 30A, 10V
Power Dissipation (Max): 2.1W (Ta), 37W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TSDSON-8-FL
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 15 V
auf Bestellung 120 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
12+1.48 EUR
20+0.92 EUR
100+0.6 EUR
Mindestbestellmenge: 12
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IRF7313TRPBF-1 IRF7313PbF-1_11-14-13.pdf
IRF7313TRPBF-1
Hersteller: Infineon Technologies
Description: MOSFET 2N-CH 30V 6.5A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W (Ta)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 6.5A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 650pF @ 25V
Rds On (Max) @ Id, Vgs: 29mOhm @ 5.8A, 10V
Gate Charge (Qg) (Max) @ Vgs: 33nC @ 10V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Obsolete
Produkt ist nicht verfügbar
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BTF3080EJDEMOBOARDTOBO1 Infineon-Demoboard_BTFxxxEJ-UserManual-v01_00-EN.pdf?fileId=5546d462712ef9b701712fc897870114
BTF3080EJDEMOBOARDTOBO1
Hersteller: Infineon Technologies
Description: BTF3080EJ DEMOBOARD
Packaging: Bulk
Function: Switch
Type: Power Management
Contents: Board(s)
Utilized IC / Part: BTF3080EJ
Platform: Arduino
Part Status: Active
auf Bestellung 5 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+74.8 EUR
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IPB60R045P7ATMA1 Infineon-IPB60R045P7-DS-v02_00-EN.pdf?fileId=5546d462696dbf120169b48707f64aad
IPB60R045P7ATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 600V 61A TO263-3-2
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 61A (Tc)
Rds On (Max) @ Id, Vgs: 45mOhm @ 22.5A, 10V
Power Dissipation (Max): 201W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1.08mA
Supplier Device Package: PG-TO263-3-2
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3891 pF @ 400 V
Produkt ist nicht verfügbar
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IPZA60R045P7XKSA1 Infineon-IPZA60R045P7-DS-v02_00-EN.pdf?fileId=5546d462696dbf120169b454244a483a
IPZA60R045P7XKSA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 650V 61A TO247-4-3
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 61A (Tc)
Rds On (Max) @ Id, Vgs: 45mOhm @ 22.5A, 10V
Power Dissipation (Max): 201W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1.08mA
Supplier Device Package: PG-TO247-4-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3891 pF @ 400 V
auf Bestellung 222 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+13.36 EUR
10+11.45 EUR
Mindestbestellmenge: 2
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PMB7720HV1.4510PCC
Hersteller: Infineon Technologies
Description: PMB7720HV DECT IC
Packaging: Bulk
Part Status: Active
auf Bestellung 5500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
190+2.4 EUR
Mindestbestellmenge: 190
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BFG 193 E6433 BFG193.pdf
BFG 193 E6433
Hersteller: Infineon Technologies
Description: RF TRANS NPN 12V 8GHZ SOT-223-4
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 10.5dB ~ 16dB
Power - Max: 600mW
Current - Collector (Ic) (Max): 80mA
Voltage - Collector Emitter Breakdown (Max): 12V
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 30mA, 8V
Frequency - Transition: 8GHz
Noise Figure (dB Typ @ f): 1dB ~ 1.6dB @ 900MHz ~ 1.8GHz
Supplier Device Package: PG-SOT223-4
Part Status: Obsolete
Produkt ist nicht verfügbar
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BTS4880RNT
Hersteller: Infineon Technologies
Description: IC PWR SWITCH N-CHAN 1:1 DSO-36
Packaging: Tape & Reel (TR)
Features: Auto Restart, Status Flag
Package / Case: 36-BSSOP (0.433", 11.00mm Width) Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 8
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -25°C ~ 125°C (TJ)
Output Configuration: High Side
Rds On (Typ): 150mOhm
Input Type: Non-Inverting
Voltage - Load: 11V ~ 45V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 625mA
Ratio - Input:Output: 1:1
Supplier Device Package: PG-DSO-36-26
Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage
Part Status: Obsolete
Produkt ist nicht verfügbar
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IRF6216TRPBF-1 IRF6216PBF-1_7-30-14.pdf
IRF6216TRPBF-1
Hersteller: Infineon Technologies
Description: MOSFET P-CH 150V 2.2A SOT223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.2A (Ta)
Rds On (Max) @ Id, Vgs: 240mOhm @ 1.3A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: SOT-223
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1280 pF @ 25 V
Produkt ist nicht verfügbar
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BC847CWH6327 INFNS16507-1.pdf?t.download=true&u=5oefqw
Hersteller: Infineon Technologies
Description: TRANS NPN 45V 0.1A SOT323-3
Packaging: Bulk
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V
Frequency - Transition: 250MHz
Supplier Device Package: PG-SOT323-3-1
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 250 mW
Produkt ist nicht verfügbar
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BC 847C E6433 INFNS14907-1.pdf?t.download=true&u=5oefqw
BC 847C E6433
Hersteller: Infineon Technologies
Description: TRANS NPN 45V 0.1A SOT23
auf Bestellung 30000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
9427+0.048 EUR
Mindestbestellmenge: 9427
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BC847C-B5000 SIEMD095-475.pdf?t.download=true&u=5oefqw
BC847C-B5000
Hersteller: Infineon Technologies
Description: TRANS NPN 45V 0.1A PG-SOT23-3-1
Packaging: Bulk
Part Status: Active
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V
Frequency - Transition: 250MHz
Supplier Device Package: PG-SOT23-3-1
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 330 mW
Qualification: AEC-Q101
auf Bestellung 20000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
8955+0.046 EUR
Mindestbestellmenge: 8955
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MMBT3904LT1 ONSMS30148-1.pdf?hkey=EC6BD57738AE6E33B588C5F9AD3CEFA7
MMBT3904LT1
Hersteller: Infineon Technologies
Description: TRANS NPN 40V 200MA SOT23-3
Produkt ist nicht verfügbar
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EVALPSE1BF12SICTOBO1 Infineon-Evaluation_Board_for_CoolSiC_Easy1B_half-bridge_modules-ApplicationNotes-v02_00-EN.pdf?fileId=5546d4625f2e26bc015f48bf26213c81
EVALPSE1BF12SICTOBO1
Hersteller: Infineon Technologies
Description: EVAL BOARD FOR FF11MR12W1M1_B11
Packaging: Bulk
Function: Solar Charger, LED Driver
Type: Reference Design
Utilized IC / Part: FF11MR12W1M1_B11, FF23MR12W1M1_B11
Supplied Contents: Board(s)
Part Status: Active
Contents: Board(s)
auf Bestellung 4 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+540.57 EUR
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BCR 146F E6327 bcr146series.pdf?folderId=db3a30431400ef68011406f3ddb1012e&fileId=db3a30431428a373011440120c6802b7
BCR 146F E6327
Hersteller: Infineon Technologies
Description: TRANS PREBIAS NPN 50V TSFP-3
Packaging: Tape & Reel (TR)
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 5mA, 5V
Supplier Device Package: PG-TSFP-3
Current - Collector (Ic) (Max): 70 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 250 mW
Frequency - Transition: 150 MHz
Resistor - Base (R1): 47 kOhms
Resistor - Emitter Base (R2): 22 kOhms
Resistors Included: R1 and R2
Produkt ist nicht verfügbar
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IRF7769L1TRPBFTR INFN-S-A0002806797-1.pdf?t.download=true&u=5oefqw
Hersteller: Infineon Technologies
Description: N-CHANNEL POWER MOSFET
Produkt ist nicht verfügbar
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IPT020N10N3ATMA1 IPT020N10N3_Rev1.1.pdf?folderId=db3a304313b8b5a60113cee8763b02d7&fileId=db3a30433e9d5d11013e9e58035b0158
IPT020N10N3ATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 100V 300A 8HSOF
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 300A (Tc)
Rds On (Max) @ Id, Vgs: 2mOhm @ 150A, 10V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 272µA
Supplier Device Package: PG-HSOF-8-1
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 156 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11200 pF @ 50 V
auf Bestellung 9574 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+7.76 EUR
10+5.17 EUR
100+3.69 EUR
500+3.51 EUR
Mindestbestellmenge: 3
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TLE5309DE5201XUMA1 TLE5309D.pdf
TLE5309DE5201XUMA1
Hersteller: Infineon Technologies
Description: POSITION&CURRENT SENSORS
Packaging: Cut Tape (CT)
Package / Case: 16-TSSOP (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Output: Analog Voltage
Operating Temperature: -40°C ~ 125°C (TA)
Termination Style: Gull Wing
Voltage - Supply: 3V ~ 3.6V, 4.5V ~ 5.5V
Actuator Type: External Magnet, Not Included
Technology: Magnetoresistive
For Measuring: Angle
Supplier Device Package: PG-TDSO-16
Rotation Angle - Electrical, Mechanical: 0° ~ 360°, Continuous
Output Signal: Cosine, Sine
Part Status: Active
Grade: Automotive
Qualification: AEC-Q100
Produkt ist nicht verfügbar
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TLE5309DE1211XUMA1 TLE5309D.pdf
TLE5309DE1211XUMA1
Hersteller: Infineon Technologies
Description: IC ANGLE SENSOR ANLG TDSO16
Packaging: Cut Tape (CT)
Package / Case: 16-TSSOP (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Output: Analog Voltage
Operating Temperature: -40°C ~ 125°C (TA)
Termination Style: Gull Wing
Voltage - Supply: 3V ~ 3.6V, 4.5V ~ 5.5V
Actuator Type: External Magnet, Not Included
Technology: Magnetoresistive
For Measuring: Angle
Supplier Device Package: PG-TDSO-16
Rotation Angle - Electrical, Mechanical: 0° ~ 360°, Continuous
Output Signal: Cosine, Sine
Grade: Automotive
Part Status: Active
Qualification: AEC-Q100
auf Bestellung 2458 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+9.36 EUR
5+8.42 EUR
10+8.07 EUR
25+7.65 EUR
50+7.37 EUR
100+7.11 EUR
500+6.74 EUR
Mindestbestellmenge: 2
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KP215F1701PS2GOKITTOBO1 Infineon-PS2GO_MS2Go_How_to_use_June2019-UserManual-v01_00-EN.pdf?fileId=5546d4626b2d8e69016b6b47f3fd5a18
KP215F1701PS2GOKITTOBO1
Hersteller: Infineon Technologies
Description: MAP PRESSURE SENSOR 2GO KIT
Packaging: Box
Sensitivity: ±1.4kPa
Interface: Analog
Voltage - Supply: 4.5V ~ 5.5V
Sensor Type: Pressure
Utilized IC / Part: KP215F1701
Supplied Contents: Board(s)
Embedded: Yes, MCU, 32-Bit
Sensing Range: 10 ~ 115kPa
auf Bestellung 2 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+46.87 EUR
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BTT62004ESAXUMA1 Infineon-BTT6200-4ESA-DS-v01_00-EN.pdf?fileId=5546d46269e1c019016a22035b660d8d
BTT62004ESAXUMA1
Hersteller: Infineon Technologies
Description: IC PWR SWTCH N-CHAN 1:1 TSDSO-24
Packaging: Tape & Reel (TR)
Package / Case: 24-TSSOP (0.154", 3.90mm Width) Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 4
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 200mOhm
Input Type: Non-Inverting
Voltage - Load: 5V ~ 36V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 1A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-TSDSO-24-21
Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, Over Voltage
Part Status: Active
Grade: Automotive
Qualification: AEC-Q100
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+3.36 EUR
Mindestbestellmenge: 3000
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XMC4108-Q48K64AB INFN-S-A0006625596-1.pdf?t.download=true&u=5oefqw
XMC4108-Q48K64AB
Hersteller: Infineon Technologies
Description: 32-BIT MCU XMC4000 ARM CORTEX-M4
Packaging: Bulk
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 80MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 20K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M4
Data Converters: A/D 9x12b SAR; D/A 2x12b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 3.13V ~ 3.63V
Connectivity: CANbus, I²C, LINbus, SPI, UART/USART
Peripherals: DMA, I²S, POR, PWM, WDT
Supplier Device Package: 48-VQFN (7x7)
Part Status: Active
Number of I/O: 30
DigiKey Programmable: Not Verified
auf Bestellung 238 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
92+5.79 EUR
Mindestbestellmenge: 92
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XMC4504-F100F512AB INFNS27688-1.pdf?t.download=true&u=5oefqw
XMC4504-F100F512AB
Hersteller: Infineon Technologies
Description: 32-BIT MCU XMC4000 ARM CORTEX-M4
Packaging: Bulk
Package / Case: 100-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 120MHz
Program Memory Size: 512KB (512K x 8)
RAM Size: 128K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M4
Data Converters: A/D 20x12b; D/A 2x12b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 3.13V ~ 3.63V
Connectivity: CANbus, EBI/EMI, I²C, LINbus, SPI, UART/USART, USB, USB OTG
Peripherals: DMA, I²S, LED, POR, PWM, WDT
Supplier Device Package: PG-LQFP-100-25
Part Status: Active
Number of I/O: 55
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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XMC4500F100F768ACXQMA
Hersteller: Infineon Technologies
Description: 32-BIT MCU XMC4000 ARM CORTEX-M4
Produkt ist nicht verfügbar
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XMC4504-F144F512AB INFNS27688-1.pdf?t.download=true&u=5oefqw
XMC4504-F144F512AB
Hersteller: Infineon Technologies
Description: 32-BIT MCU XMC4000 ARM CORTEX-M4
Packaging: Bulk
Package / Case: 144-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 120MHz
Program Memory Size: 512KB (512K x 8)
RAM Size: 128K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M4
Data Converters: A/D 28x12b; D/A 2x12b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 3.13V ~ 3.63V
Connectivity: CANbus, EBI/EMI, I²C, LINbus, SPI, UART/USART, USB, USB OTG
Peripherals: DMA, I²S, LED, POR, PWM, WDT
Supplier Device Package: PG-LQFP-144-24
Part Status: Active
Number of I/O: 91
Produkt ist nicht verfügbar
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XMC4504-F100K512AB INFNS27688-1.pdf?t.download=true&u=5oefqw
XMC4504-F100K512AB
Hersteller: Infineon Technologies
Description: 32-BIT MCU XMC4000 ARM CORTEX-M4
Packaging: Bulk
Package / Case: 100-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 120MHz
Program Memory Size: 512KB (512K x 8)
RAM Size: 128K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M4
Data Converters: A/D 20x12b; D/A 2x12b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 3.13V ~ 3.63V
Connectivity: CANbus, EBI/EMI, I²C, LINbus, SPI, UART/USART, USB, USB OTG
Peripherals: DMA, I²S, LED, POR, PWM, WDT
Supplier Device Package: PG-LQFP-100-25
Part Status: Active
Number of I/O: 55
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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XMC4500F144F1024AB INFNS27688-1.pdf?t.download=true&u=5oefqw
XMC4500F144F1024AB
Hersteller: Infineon Technologies
Description: 32-BIT MCU XMC4000 ARM CORTEX-M4
Packaging: Bulk
Package / Case: 144-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 120MHz
Program Memory Size: 1MB (1M x 8)
RAM Size: 160K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M4
Data Converters: A/D 28x12b; D/A 2x12b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 3.13V ~ 3.63V
Connectivity: CANbus, EBI/EMI, I²C, LINbus, SPI, UART/USART, USB, USB OTG
Peripherals: DMA, I²S, LED, POR, PWM, WDT
Supplier Device Package: PG-LQFP-144-24
Part Status: Active
Number of I/O: 91
Produkt ist nicht verfügbar
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XMC4108Q48K64BAXUMA1 Infineon-XMC4100_XMC4200_DS-DS-v01_04-EN.pdf?fileId=5546d462696dbf120169817056f938ff
XMC4108Q48K64BAXUMA1
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 64KB FLASH 48VQFN
Packaging: Tape & Reel (TR)
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 80MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 20K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M4
Data Converters: A/D 9x12b; D/A 2x12b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 3.13V ~ 3.63V
Connectivity: CANbus, I2C, LINbus, SPI, UART/USART, USB
Peripherals: DMA, I2S, LED, POR, PWM, WDT
Supplier Device Package: PG-VQFN-48-53
Number of I/O: 21
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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XMC4108Q48K64BAXUMA1 Infineon-XMC4100_XMC4200_DS-DS-v01_04-EN.pdf?fileId=5546d462696dbf120169817056f938ff
XMC4108Q48K64BAXUMA1
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 64KB FLASH 48VQFN
Packaging: Cut Tape (CT)
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 80MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 20K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M4
Data Converters: A/D 9x12b; D/A 2x12b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 3.13V ~ 3.63V
Connectivity: CANbus, I2C, LINbus, SPI, UART/USART, USB
Peripherals: DMA, I2S, LED, POR, PWM, WDT
Supplier Device Package: PG-VQFN-48-53
Number of I/O: 21
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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XMC4100Q48K128ABXUMA1 Infineon-XMC4100_XMC4200_DS-DS-v01_04-EN.pdf?fileId=5546d462696dbf120169817056f938ff
XMC4100Q48K128ABXUMA1
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 128KB FLASH 48VQFN
Packaging: Cut Tape (CT)
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 80MHz
Program Memory Size: 128KB (128K x 8)
RAM Size: 20K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M4
Data Converters: A/D 9x12b; D/A 2x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 3.13V ~ 3.63V
Connectivity: CANbus, I²C, LINbus, SPI, UART/USART, USB
Peripherals: DMA, I²S, LED, POR, PWM, WDT
Supplier Device Package: PG-VQFN-48-22
Part Status: Discontinued at Digi-Key
Number of I/O: 21
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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MB89567ACPFV-GS-318E1 ProductGuide_2008.1.pdf
Hersteller: Infineon Technologies
Description: IC MCU 8BIT 32KB MROM 80LQFP
Packaging: Tray
Package / Case: 80-LQFP
Mounting Type: Surface Mount
Speed: 12.5MHz
Program Memory Size: 32KB (32K x 8)
RAM Size: 1K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External
Program Memory Type: Mask ROM
Core Processor: F²MC-8L
Data Converters: A/D 8x10b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 2.2V ~ 5.5V
Connectivity: I²C, Serial I/O, UART/USART
Peripherals: LCD, POR, PWM, WDT
Supplier Device Package: 80-LQFP (12x12)
Part Status: Obsolete
Number of I/O: 50
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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IRF3546MTRPBF irf3546m.pdf?fileId=5546d462533600a4015355df3145191e
IRF3546MTRPBF
Hersteller: Infineon Technologies
Description: MOSFET 4N-CH 25V 16A 41QFN
Packaging: Bulk
Package / Case: 41-PowerVFQFN
Mounting Type: Surface Mount
Configuration: 4 N-Channel
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 25V
Current - Continuous Drain (Id) @ 25°C: 16A (Tc), 20A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1310pF @ 13V
Rds On (Max) @ Id, Vgs: 3.9mOhm @ 27A, 10V
Gate Charge (Qg) (Max) @ Vgs: 15nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.1V @ 35µA
Supplier Device Package: 41-PQFN (6x8)
Part Status: Obsolete
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
71+6.46 EUR
Mindestbestellmenge: 71
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IPA032N06N3 G INFNS27812-1.pdf?t.download=true&u=5oefqw
IPA032N06N3 G
Hersteller: Infineon Technologies
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 84A (Tc)
Rds On (Max) @ Id, Vgs: 3.2mOhm @ 80A, 10V
Power Dissipation (Max): 41W (Tc)
Vgs(th) (Max) @ Id: 4V @ 118µA
Supplier Device Package: PG-TO220-3-111
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 165 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13000 pF @ 30 V
Produkt ist nicht verfügbar
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