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ITS436L2SHKSA1 ITS436L2SHKSA1 Infineon Technologies INFNS09387-1.pdf?t.download=true&u=5oefqw Description: BUFFER/INVERTER PERIPHL DRIVER
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BTS430K2E3122A BTS430K2E3122A Infineon Technologies INFNS20608-1.pdf?t.download=true&u=5oefqw Description: BUFFER/INVERTER PERIPHL DRIVER
Current - Output (Max): 36A
Voltage - Supply (Vcc/Vdd): Not Required
Voltage - Load: 4.5V ~ 32V
Input Type: Non-Inverting
Rds On (Typ): 30mOhm
Output Configuration: High Side
Operating Temperature: -40°C ~ 150°C (TJ)
Switch Type: General Purpose
Interface: On/Off
Number of Outputs: 1
Mounting Type: Surface Mount
Output Type: N-Channel
Package / Case: TO-263-6, D²Pak (5 Leads + Tab), TO-263BA
Features: Auto Restart, Slew Rate Controlled
Packaging: Bulk
Part Status: Active
Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, Over Voltage
Supplier Device Package: P-TO220-5-122
Ratio - Input:Output: 1:1
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BTS436L2GNTMA1 BTS436L2GNTMA1 Infineon Technologies INFNS05499-1.pdf?t.download=true&u=5oefqw Description: BUFFER/INVERTER PERIPHL DRIVER
Part Status: Active
Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Load, Over Temperature, Over Voltage, Short Circuit, UVLO
Supplier Device Package: PG-TO263-5-2
Ratio - Input:Output: 1:1
Current - Output (Max): 9.8A
Voltage - Supply (Vcc/Vdd): Not Required
Voltage - Load: 4.75V ~ 41V
Input Type: Non-Inverting
Rds On (Typ): 35mOhm
Output Configuration: High Side
Operating Temperature: -40°C ~ 150°C (TJ)
Switch Type: General Purpose
Interface: On/Off
Number of Outputs: 1
Mounting Type: Surface Mount
Output Type: N-Channel
Package / Case: TO-263-5, D²Pak (4 Leads + Tab), TO-263BB
Features: Slew Rate Controlled
Packaging: Bulk
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BFR182E-6327 BFR182E-6327 Infineon Technologies INFNS10845-1.pdf?t.download=true&u=5oefqw Description: RF N-CHANNEL MOSFET
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2EDF9275FXUMA1 2EDF9275FXUMA1 Infineon Technologies Infineon-2EDF7275F-DS-v02_04-EN.pdf?fileId=5546d462636cc8fb0163b08fd9203057 Description: IC GATE DRVR HALF-BRIDGE 16SOIC
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 650 V
Supplier Device Package: PG-DSO-16-11
Rise / Fall Time (Typ): 6.5ns, 4.5ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, SiC MOSFET
Logic Voltage - VIL, VIH: -, 1.65V
Current - Peak Output (Source, Sink): 4A, 8A
Part Status: Active
DigiKey Programmable: Not Verified
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2EDF9275FXUMA1 2EDF9275FXUMA1 Infineon Technologies Infineon-2EDF7275F-DS-v02_04-EN.pdf?fileId=5546d462636cc8fb0163b08fd9203057 Description: IC GATE DRVR HALF-BRIDGE 16SOIC
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 650 V
Supplier Device Package: PG-DSO-16-11
Rise / Fall Time (Typ): 6.5ns, 4.5ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, SiC MOSFET
Logic Voltage - VIL, VIH: -, 1.65V
Current - Peak Output (Source, Sink): 4A, 8A
Part Status: Active
DigiKey Programmable: Not Verified
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FS200R12PT4BOSA1 FS200R12PT4BOSA1 Infineon Technologies Infineon-FS200R12PT4-DS-v02_02-en_de.pdf?fileId=db3a30432239cccd01230df5d3f555e9 Description: IGBT MOD 1200V 280A 1000W MOD
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 200A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 280 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 1000 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 14 nF @ 25 V
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BTS611L1E3128ANTMA1 BTS611L1E3128ANTMA1 Infineon Technologies INFNS05471-1.pdf?t.download=true&u=5oefqw Description: 2 CH HIGH-SIDE POWER SWITCH
Part Status: Active
Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, Over Voltage, Short Circuit, UVLO
Supplier Device Package: P-TO263-7-2
Ratio - Input:Output: 1:1
Current - Output (Max): 4.4A
Voltage - Supply (Vcc/Vdd): Not Required
Voltage - Load: 5V ~ 34V
Input Type: Non-Inverting
Rds On (Typ): 160mOhm
Output Configuration: High Side
Operating Temperature: -40°C ~ 150°C (TJ)
Switch Type: General Purpose
Interface: Logic
Number of Outputs: 2
Mounting Type: Surface Mount
Output Type: N-Channel
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Features: Auto Restart, Slew Rate Controlled
Packaging: Bulk
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BSC0910NDIATMA1 BSC0910NDIATMA1 Infineon Technologies Infineon-BSC0910NDI-DS-v02_00-en.pdf?fileId=db3a304336ca04c90136cedc08b64926 Description: MOSFET 2N-CH 25V 11A/31A TISON8
Part Status: Active
Supplier Device Package: PG-TISON-8
Vgs(th) (Max) @ Id: 2V @ 250µA
FET Feature: Logic Level Gate, 4.5V Drive
Gate Charge (Qg) (Max) @ Vgs: 6.6nC @ 4.5V
Rds On (Max) @ Id, Vgs: 4.6mOhm @ 25A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 4500pF @ 12V
Current - Continuous Drain (Id) @ 25°C: 11A, 31A
Drain to Source Voltage (Vdss): 25V
Power - Max: 1W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual) Asymmetrical
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
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BSC0910NDIATMA1 BSC0910NDIATMA1 Infineon Technologies Infineon-BSC0910NDI-DS-v02_00-en.pdf?fileId=db3a304336ca04c90136cedc08b64926 Description: MOSFET 2N-CH 25V 11A/31A TISON8
Part Status: Active
Supplier Device Package: PG-TISON-8
Vgs(th) (Max) @ Id: 2V @ 250µA
FET Feature: Logic Level Gate, 4.5V Drive
Gate Charge (Qg) (Max) @ Vgs: 6.6nC @ 4.5V
Rds On (Max) @ Id, Vgs: 4.6mOhm @ 25A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 4500pF @ 12V
Current - Continuous Drain (Id) @ 25°C: 11A, 31A
Drain to Source Voltage (Vdss): 25V
Power - Max: 1W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual) Asymmetrical
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
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100+2.26 EUR
500+1.82 EUR
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BSP372NH6327XTSA1 BSP372NH6327XTSA1 Infineon Technologies BSP372N_rev2+0.pdf?folderId=db3a3043156fd573011622e10b5c1f67&fileId=db3a30433dd58def013dd8e68ae413f6 Description: MOSFET N-CH 100V 1.8A SOT223-4
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.8A (Ta)
Rds On (Max) @ Id, Vgs: 230mOhm @ 1.8A, 10V
Power Dissipation (Max): 1.8W (Ta)
Vgs(th) (Max) @ Id: 1.8V @ 218µA
Supplier Device Package: PG-SOT223-4
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 14.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 329 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
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BCR196WH6327XTSA1 BCR196WH6327XTSA1 Infineon Technologies bcr196series.pdf?folderId=db3a30431400ef68011406f3ddb1012e&fileId=db3a30431428a37301144048156b02db Description: TRANS PREBIAS PNP 50V SOT323
Resistors Included: R1 and R2
Supplier Device Package: PG-SOT323
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 5mA, 5V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Transistor Type: PNP - Pre-Biased
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Packaging: Bulk
Resistor - Emitter Base (R2): 22 kOhms
Resistor - Base (R1): 47 kOhms
Frequency - Transition: 150 MHz
Power - Max: 250 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 70 mA
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BCR196E6327HTSA1 BCR196E6327HTSA1 Infineon Technologies bcr196series.pdf?folderId=db3a30431400ef68011406f3ddb1012e&fileId=db3a30431428a37301144048156b02db Description: TRANS PREBIAS PNP 50V SOT23
Resistors Included: R1 and R2
Resistor - Emitter Base (R2): 22 kOhms
Resistor - Base (R1): 47 kOhms
Frequency - Transition: 150 MHz
Power - Max: 200 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 70 mA
Supplier Device Package: PG-SOT23
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 5mA, 5V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Transistor Type: PNP - Pre-Biased
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Bulk
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BB831E7904HTSA1 BB831E7904HTSA1 Infineon Technologies BB831.pdf Description: DIODE VAR CAP 30V 20MA SOD-323
Packaging: Bulk
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Diode Type: Single
Operating Temperature: -55°C ~ 125°C (TJ)
Capacitance @ Vr, F: 1.2pF @ 28V, 1MHz
Capacitance Ratio Condition: C1/C28
Supplier Device Package: PG-SOD323-3D
Part Status: Obsolete
Voltage - Peak Reverse (Max): 30 V
Capacitance Ratio: 9.5
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BB831E7904 BB831E7904 Infineon Technologies INFNS11653-1.pdf?t.download=true&u=5oefqw Description: VARIABLE CAPACITANCE DIODE
Packaging: Bulk
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Diode Type: Single
Operating Temperature: -55°C ~ 125°C (TJ)
Capacitance @ Vr, F: 1.2pF @ 28V, 1MHz
Capacitance Ratio Condition: C1/C28
Supplier Device Package: PG-SOD323-2
Part Status: Active
Voltage - Peak Reverse (Max): 30 V
Capacitance Ratio: 9.5
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BTS730CT BTS730CT Infineon Technologies INFNS12421-1.pdf?t.download=true&u=5oefqw Description: FLUORESCENT LIGHT CONTROLLER
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BTS730NT Infineon Technologies Description: IC PWR PWM N-CH 1:1 DSO-20
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XMC1404F064X0200AAXUMA1 XMC1404F064X0200AAXUMA1 Infineon Technologies Infineon-XMC1400-DS-v01_03-EN.pdf?fileId=5546d46250cc1fdf015110a2596343b2 Description: IC MCU 32BIT 200KB FLASH 64LQFP
Packaging: Tape & Reel (TR)
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 200KB (200K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: A/D 12x12b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V
Connectivity: CANbus, I2C, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, I2S, LED, POR, PWM, WDT
Supplier Device Package: PG-LQFP-64-26
Part Status: Active
Number of I/O: 48
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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IAUZ20N08S5L300ATMA1 IAUZ20N08S5L300ATMA1 Infineon Technologies Infineon-IAUZ20N08S5L300-DataSheet-v01_00-EN.pdf?fileId=5546d4626f1cf1c5016f1e6316a2012e Description: MOSFET N-CH 80V 20A 8TSDSON-32
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 30mOhm @ 10A, 10V
Power Dissipation (Max): 30W (Tc)
Vgs(th) (Max) @ Id: 2V @ 8µA
Supplier Device Package: PG-TSDSON-8-32
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 10.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 599 pF @ 40 V
Grade: Automotive
Qualification: AEC-Q101
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IAUZ20N08S5L300ATMA1 IAUZ20N08S5L300ATMA1 Infineon Technologies Infineon-IAUZ20N08S5L300-DataSheet-v01_00-EN.pdf?fileId=5546d4626f1cf1c5016f1e6316a2012e Description: MOSFET N-CH 80V 20A 8TSDSON-32
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 30mOhm @ 10A, 10V
Power Dissipation (Max): 30W (Tc)
Vgs(th) (Max) @ Id: 2V @ 8µA
Supplier Device Package: PG-TSDSON-8-32
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 10.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 599 pF @ 40 V
Grade: Automotive
Qualification: AEC-Q101
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10+2.14 EUR
16+1.34 EUR
100+0.88 EUR
500+0.69 EUR
1000+0.62 EUR
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IRF7805ZTRPBF-1 IRF7805ZTRPBF-1 Infineon Technologies IRF7805ZPbF-1_11-20-13.pdf Description: MOSFET N-CH 30V 16A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Ta)
Rds On (Max) @ Id, Vgs: 6.8mOhm @ 16A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 2.25V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2080 pF @ 15 V
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SAK-C167CR-L33MTR Infineon Technologies Description: LEGACY 16-BIT MCU
Packaging: Bulk
Part Status: Active
DigiKey Programmable: Not Verified
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IR38165MTRPBFAUMA1 IR38165MTRPBFAUMA1 Infineon Technologies Infineon-IR38163M%20IR38165M%20IR38363M%20IR38365M%20Datasheet-DS-v03_20-EN.pdf?fileId=5546d4625b62cd8a015bcf81f1526e4c Description: IC REG BUCK ADJ 30A 24PQFN
Packaging: Tape & Reel (TR)
Package / Case: 24-PowerVFQFN
Output Type: Adjustable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 30A
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Frequency - Switching: 150kHz ~ 1.5MHz
Voltage - Input (Max): 16V
Topology: Buck
Supplier Device Package: 24-PQFN (5x7)
Synchronous Rectifier: Yes
Voltage - Output (Max): 14V
Voltage - Input (Min): 1.5V
Voltage - Output (Min/Fixed): 0.5V
Part Status: Active
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IR38165MTRPBFAUMA1 IR38165MTRPBFAUMA1 Infineon Technologies Infineon-IR38163M%20IR38165M%20IR38363M%20IR38365M%20Datasheet-DS-v03_20-EN.pdf?fileId=5546d4625b62cd8a015bcf81f1526e4c Description: IC REG BUCK ADJ 30A 24PQFN
Part Status: Active
Voltage - Output (Min/Fixed): 0.5V
Voltage - Input (Min): 1.5V
Voltage - Output (Max): 14V
Synchronous Rectifier: Yes
Supplier Device Package: 24-PQFN (5x7)
Topology: Buck
Voltage - Input (Max): 16V
Frequency - Switching: 150kHz ~ 1.5MHz
Output Configuration: Positive
Operating Temperature: -40°C ~ 125°C (TJ)
Current - Output: 30A
Function: Step-Down
Number of Outputs: 1
Mounting Type: Surface Mount
Output Type: Adjustable
Package / Case: 24-PowerVFQFN
Packaging: Cut Tape (CT)
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DEMO-PTOOL-300W-M DEMO-PTOOL-300W-M Infineon Technologies Infineon-DEMO-PTOOL-300W-M%20User%20Guide-UM-v01_01-EN.pdf?fileId=5546d4625cc9456a015ce51926c20951 Description: EVAL POWER TOOL
Packaging: Box
Function: Motor Controller/Driver
Type: Power Management
Contents: Board(s)
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TDA5101XUMA3 Infineon Technologies Part_Number_Guide_Web.pdf Description: TRANSMITTER ASK/FSK P-TSSOP-16
Packaging: Tape & Reel (TR)
Part Status: Obsolete
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TDA5101XUMA1 TDA5101XUMA1 Infineon Technologies TDA5101XUMA1_Web.pdf Description: RF TX IC ASK/FSK 315MHZ 16TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Frequency: 315MHz
Modulation or Protocol: ASK, FSK
Operating Temperature: -25°C ~ 85°C
Voltage - Supply: 2.1V ~ 4V
Power - Output: 5dBm
Applications: ISM
Supplier Device Package: PG-TSSOP-16-1
Part Status: Obsolete
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TDA5101XUMA2 Infineon Technologies Part_Number_Guide_Web.pdf Description: TRANSMITTER ASK/FSK P-TSSOP-16
Packaging: Tape & Reel (TR)
Part Status: Obsolete
Produkt ist nicht verfügbar
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IRFR9N20DTRPBF IRFR9N20DTRPBF Infineon Technologies irfr9n20dpbf.pdf?fileId=5546d462533600a40153563610b1213b Description: MOSFET N-CH 200V 9.4A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.4A (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 5.6A, 10V
Power Dissipation (Max): 86W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 560 pF @ 25 V
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111-4126PBF Infineon Technologies Description: IC GATE DRIVER SMD
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CY9AF311NABGL-GE1 CY9AF311NABGL-GE1 Infineon Technologies Infineon-CY9A310A_Series_32_Bit_Arm_Cortex_M3_FM3_Microcontroller-DataSheet-v06_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ede11f262e1&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Description: IC MCU 32BIT 64KB FLASH 112PFBGA
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CY9AF111NABGL-GE1 CY9AF111NABGL-GE1 Infineon Technologies Infineon-CY9A110A_CY9A110_Series_32_Bit_Arm_Cortex_M3_FM3_Microcontroller-DataSheet-v07_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0eddff4562bb&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-fil Description: IC MCU 32BIT 64KB FLASH 112PFBGA
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IPW65R190E6 IPW65R190E6 Infineon Technologies INFN-S-A0004583440-1.pdf?t.download=true&u=5oefqw Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20.2A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 7.3A, 10V
Power Dissipation (Max): 151W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 730µA
Supplier Device Package: PG-TO247-3-41
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 73 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1620 pF @ 100 V
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IPW65R190C6 IPW65R190C6 Infineon Technologies INFNS15520-1.pdf?t.download=true&u=5oefqw Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20.2A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 7.3A, 10V
Power Dissipation (Max): 151W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 730µA
Supplier Device Package: PG-TO247-3-41
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 73 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1620 pF @ 100 V
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IPI65R190C IPI65R190C Infineon Technologies Infineon-IPX65R190CFD-DS-v02_07-en.pdf?fileId=db3a30432fd0c54a012fded065a8309b Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20.2A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 7.3A, 10V
Power Dissipation (Max): 151W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 730µA
Supplier Device Package: PG-TO262-3-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 73 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1620 pF @ 100 V
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BSP372NH6327XTSA1 BSP372NH6327XTSA1 Infineon Technologies BSP372N_rev2+0.pdf?folderId=db3a3043156fd573011622e10b5c1f67&fileId=db3a30433dd58def013dd8e68ae413f6 Description: MOSFET N-CH 100V 1.8A SOT223-4
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.8A (Ta)
Rds On (Max) @ Id, Vgs: 230mOhm @ 1.8A, 10V
Power Dissipation (Max): 1.8W (Ta)
Vgs(th) (Max) @ Id: 1.8V @ 218µA
Supplier Device Package: PG-SOT223-4
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 14.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 329 pF @ 25 V
Qualification: AEC-Q101
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DPS368XTSA1 DPS368XTSA1 Infineon Technologies Infineon-DPS368-DS-v01_00-EN.pdf?fileId=5546d46269e1c019016a0c45105d4b40 Description: SENSOR 17.4PSIG 24BIT 8VLGA
Features: Temperature Compensated
Packaging: Cut Tape (CT)
Package / Case: 8-VFLGA
Output Type: I2C, SPI
Mounting Type: Surface Mount
Output: 24 b
Operating Pressure: 4.35PSI ~ 17.4PSI (30kPa ~ 120kPa)
Pressure Type: Vented Gauge
Accuracy: ±0.015PSI (±0.1kPa)
Operating Temperature: -40°C ~ 85°C
Termination Style: SMD (SMT) Tab
Voltage - Supply: 1.7V ~ 3.6V
Applications: Board Mount
Supplier Device Package: PG-VLGA-8-1
Port Style: No Port
Maximum Pressure: 145PSI (999.74kPa)
Part Status: Active
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DDB6U134N16RRB11BPSA1 DDB6U134N16RRB11BPSA1 Infineon Technologies PressFIT_Portfolio_PB_05-2016.pdf Description: IGBT MODULE
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single Chopper
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 75A
NTC Thermistor: Yes
Supplier Device Package: AG-ECONO2B
Part Status: Active
Current - Collector (Ic) (Max): 125 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 400 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 5.1 nF @ 25 V
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S29GL128P90TFIR10 S29GL128P90TFIR10 Infineon Technologies 128_Mbit_3_V_Page_Flash_with_90_nm_MirrorBit_Process_Technology-DataSheet-v03_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed7850458a5&utm_source=cypress&utm_medium=ref Description: IC FLASH 128MBIT PARALLEL 56TSOP
DigiKey Programmable: Verified
Technology: FLASH - NOR
Voltage - Supply: 2.7V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Memory Type: Non-Volatile
Memory Size: 128Mbit
Mounting Type: Surface Mount
Package / Case: 56-TFSOP (0.724", 18.40mm Width)
Packaging: Tray
Memory Organization: 16M x 8
Access Time: 90 ns
Memory Interface: Parallel
Write Cycle Time - Word, Page: 90ns
Part Status: Active
Supplier Device Package: 56-TSOP
Memory Format: FLASH
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TD320N18SOFHPSA1 TD320N18SOFHPSA1 Infineon Technologies Infineon-TT320N18SOF-DS-v03_01-EN.pdf?fileId=5546d4625cc9456a015d06e572e77eea Description: SCR MODULE 1.8KV 520A MODULE
Structure: Series Connection - SCR/Diode
Operating Temperature: -40°C ~ 130°C
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Tray
Voltage - Off State: 1.8 kV
Current - On State (It (RMS)) (Max): 520 A
Voltage - Gate Trigger (Vgt) (Max): 2 V
Current - On State (It (AV)) (Max): 320 A
Number of SCRs, Diodes: 1 SCR, 1 Diode
Current - Non Rep. Surge 50, 60Hz (Itsm): 9500A @ 50Hz
Current - Gate Trigger (Igt) (Max): 150 mA
Current - Hold (Ih) (Max): 150 mA
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BFP420FH6327 Infineon Technologies INFNS27308-1.pdf?t.download=true&u=5oefqw Description: RF TRANSISTOR, X BAND, NPN
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: 4-SMD, Flat Leads
Packaging: Bulk
Part Status: Active
Supplier Device Package: 4-TSFP
Noise Figure (dB Typ @ f): 0.9dB ~ 2.2dB @ 150MHz ~ 5.5GHz
Frequency - Transition: 25GHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 4V
Voltage - Collector Emitter Breakdown (Max): 4.5V
Current - Collector (Ic) (Max): 60mA
Power - Max: 210mW
Gain: 37dB
Operating Temperature: 150°C (TJ)
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BFP420H6801 BFP420H6801 Infineon Technologies INFNS15718-1.pdf?t.download=true&u=5oefqw Description: RF TRANSISTOR, X BAND, NPN
Part Status: Active
Supplier Device Package: PG-SOT343-4-2
Noise Figure (dB Typ @ f): 1.1dB @ 1.8GHz
Frequency - Transition: 25GHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 20mA, 4V
Voltage - Collector Emitter Breakdown (Max): 4.5V
Current - Collector (Ic) (Max): 60mA
Power - Max: 210mW
Gain: 21dB
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: SC-82A, SOT-343
Packaging: Bulk
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BFP420H6433 BFP420H6433 Infineon Technologies INFNS15718-1.pdf?t.download=true&u=5oefqw Description: RF TRANSISTOR, X BAND, NPN
Part Status: Active
Supplier Device Package: PG-SOT343-4-2
Noise Figure (dB Typ @ f): 1.1dB @ 1.8GHz
Frequency - Transition: 25GHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 20mA, 4V
Voltage - Collector Emitter Breakdown (Max): 4.5V
Current - Collector (Ic) (Max): 60mA
Power - Max: 210mW
Gain: 21dB
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: SC-82A, SOT-343
Packaging: Bulk
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BFP420H6740 BFP420H6740 Infineon Technologies INFNS15718-1.pdf?t.download=true&u=5oefqw Description: RF TRANSISTOR, X BAND, NPN
Part Status: Active
Supplier Device Package: PG-SOT343-4-2
Noise Figure (dB Typ @ f): 1.1dB @ 1.8GHz
Frequency - Transition: 25GHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 20mA, 4V
Voltage - Collector Emitter Breakdown (Max): 4.5V
Current - Collector (Ic) (Max): 60mA
Power - Max: 210mW
Gain: 21dB
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: SC-82A, SOT-343
Packaging: Bulk
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BFP420E6327 BFP420E6327 Infineon Technologies INFNS15718-1.pdf?t.download=true&u=5oefqw Description: RF TRANS NPN 5V 25GHZ PG-SOT-343
Packaging: Bulk
Package / Case: SC-82A, SOT-343
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 21dB
Power - Max: 160mW
Current - Collector (Ic) (Max): 35mA
Voltage - Collector Emitter Breakdown (Max): 5V
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 20mA, 4V
Frequency - Transition: 25GHz
Noise Figure (dB Typ @ f): 1.1dB @ 1.8GHz
Supplier Device Package: PG-SOT343-4
Part Status: Active
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BFP420E6327BTSA1 BFP420E6327BTSA1 Infineon Technologies BFP420_Rev2013.pdf Description: RF TRANS NPN 5V 25GHZ PG-SOT-343
Packaging: Tape & Reel (TR)
Package / Case: SC-82A, SOT-343
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 21dB
Power - Max: 160mW
Current - Collector (Ic) (Max): 35mA
Voltage - Collector Emitter Breakdown (Max): 5V
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 20mA, 4V
Frequency - Transition: 25GHz
Noise Figure (dB Typ @ f): 1.1dB @ 1.8GHz
Supplier Device Package: PG-SOT343-3D
Part Status: Obsolete
Produkt ist nicht verfügbar
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BFP420E6433HTMA1 BFP420E6433HTMA1 Infineon Technologies BFP420_Rev2013.pdf Description: RF TRANS NPN 5V 25GHZ PG-SOT-343
Packaging: Tape & Reel (TR)
Package / Case: SC-82A, SOT-343
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 21dB
Power - Max: 160mW
Current - Collector (Ic) (Max): 35mA
Voltage - Collector Emitter Breakdown (Max): 5V
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 20mA, 4V
Frequency - Transition: 25GHz
Noise Figure (dB Typ @ f): 1.1dB @ 1.8GHz
Supplier Device Package: PG-SOT343-3D
Part Status: Obsolete
Produkt ist nicht verfügbar
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BFP 420F E6327 BFP 420F E6327 Infineon Technologies bfp420.pdf Description: RF TRANS NPN 5V 25GHZ 4-TSFP
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, Flat Leads
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 19.5dB
Power - Max: 160mW
Current - Collector (Ic) (Max): 35mA
Voltage - Collector Emitter Breakdown (Max): 5V
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 4V
Frequency - Transition: 25GHz
Noise Figure (dB Typ @ f): 1.1dB @ 1.8GHz
Supplier Device Package: 4-TSFP
Part Status: Obsolete
Produkt ist nicht verfügbar
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BTS70061EPPXUMA1 BTS70061EPPXUMA1 Infineon Technologies BTS7006-1EPP_v1.03_4-29-19.pdf Description: IC PWR SWTCH N-CHAN 1:1 TSDSO-14
Packaging: Tape & Reel (TR)
Package / Case: 14-TSSOP (0.154", 3.90mm Width) Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 6.6mOhm
Input Type: Non-Inverting
Voltage - Load: 6V ~ 18V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 12.5A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-TSDSO-14-22
Fault Protection: Over Current, Over Voltage, Short Circuit, UVLO
Grade: Automotive
Part Status: Active
Qualification: AEC-Q100
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BTS70061EPPXUMA1 BTS70061EPPXUMA1 Infineon Technologies BTS7006-1EPP_v1.03_4-29-19.pdf Description: IC PWR SWTCH N-CHAN 1:1 TSDSO-14
Packaging: Cut Tape (CT)
Package / Case: 14-TSSOP (0.154", 3.90mm Width) Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 6.6mOhm
Input Type: Non-Inverting
Voltage - Load: 6V ~ 18V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 12.5A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-TSDSO-14-22
Fault Protection: Over Current, Over Voltage, Short Circuit, UVLO
Grade: Automotive
Part Status: Active
Qualification: AEC-Q100
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IRFC7313B Infineon Technologies Description: MOSFET 30V DIE
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
Supplier Device Package: Die
Part Status: Obsolete
Drain to Source Voltage (Vdss): 30 V
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TLE4276GV10 TLE4276GV10 Infineon Technologies INFNS14692-1.pdf?t.download=true&u=5oefqw Description: IC REG LIN 10V 400MA TO263-5-1
Packaging: Bulk
Package / Case: TO-263-6, D2PAK (5 Leads + Tab), TO-263BA
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 400mA
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 220 µA
Voltage - Input (Max): 40V
Number of Regulators: 1
Supplier Device Package: PG-TO263-5-1
Voltage - Output (Min/Fixed): 10V
Control Features: Inhibit
Grade: Automotive
Part Status: Active
PSRR: 54dB (100Hz)
Voltage Dropout (Max): 0.5V @ 250mA
Protection Features: Antisaturation, Over Temperature, Reverse Polarity, Short Circuit
Current - Supply (Max): 25 mA
Qualification: AEC-Q100
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TLE4276GV85 TLE4276GV85 Infineon Technologies INFNS14692-1.pdf?t.download=true&u=5oefqw Description: IC REG LINEAR FIXED LDO REG
Packaging: Bulk
Package / Case: TO-263-6, D²Pak (5 Leads + Tab), TO-263BA
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 400mA
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 200 µA
Voltage - Input (Max): 40V
Number of Regulators: 1
Supplier Device Package: PG-TO263-5-1
Voltage - Output (Min/Fixed): 8.5V
Control Features: Inhibit
Part Status: Active
PSRR: 54dB (100Hz)
Voltage Dropout (Max): 0.5V @ 250mA
Protection Features: Antisaturation, Over Current, Over Temperature, Reverse Polarity, Short Circuit
Current - Supply (Max): 25 mA
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ICD22V03X1SA1 Infineon Technologies Part_Number_Guide_Web.pdf Description: CHIP BARE DIE
Packaging: Bulk
Part Status: Obsolete
Produkt ist nicht verfügbar
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ICD22V04X1SA1 Infineon Technologies Part_Number_Guide_Web.pdf Description: CHIP BARE DIE
Packaging: Bulk
Part Status: Obsolete
Produkt ist nicht verfügbar
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ICD22V05X1SA1 Infineon Technologies Part_Number_Guide_Web.pdf Description: CHIP BARE DIE
Packaging: Bulk
Part Status: Obsolete
Produkt ist nicht verfügbar
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XMC1301Q040F0032ABXUMA1 XMC1301Q040F0032ABXUMA1 Infineon Technologies Infineon-xmc1300_AB-DS-v01_06-EN.pdf?fileId=5546d4624a0bf290014a4bdb073c25c6 Description: IC MCU 32BIT 32KB FLASH 40VQFN
DigiKey Programmable: Not Verified
Number of I/O: 27
Part Status: Active
Supplier Device Package: PG-VQFN-40-13
Peripherals: Brown-out Detect/Reset, I2S, POR, PWM, WDT
Connectivity: I2C, LINbus, SPI, UART/USART
Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V
Core Size: 32-Bit Single-Core
Data Converters: A/D 16x12b
Core Processor: ARM® Cortex®-M0
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 85°C (TA)
RAM Size: 16K x 8
Program Memory Size: 32KB (32K x 8)
Speed: 32MHz
Mounting Type: Surface Mount
Package / Case: 40-VFQFN Exposed Pad
Packaging: Cut Tape (CT)
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25+4.81 EUR
100+4.16 EUR
250+3.95 EUR
500+3.55 EUR
1000+2.99 EUR
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TLE5109A16E2210XUMA1 TLE5109A16E2210XUMA1 Infineon Technologies infineon-tle5x09a16-d-datasheet-en.pdf Description: IC ANGLE SENSOR 5.0 V
Packaging: Tape & Reel (TR)
Package / Case: 16-TSSOP (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Output: Analog Voltage
Termination Style: Gull Wing
Voltage - Supply: 5V
Linearity: ±0.1°
Actuator Type: External Magnet, Not Included
Technology: Magnetoresistive
For Measuring: Angle
Supplier Device Package: PG-TDSO-16-1
Rotation Angle - Electrical, Mechanical: 0° ~ 180°
Output Signal: Cosine, Sine
Grade: Automotive
Qualification: AEC-Q100
Produkt ist nicht verfügbar
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TLE5109A16E2210XUMA1 TLE5109A16E2210XUMA1 Infineon Technologies infineon-tle5x09a16-d-datasheet-en.pdf Description: IC ANGLE SENSOR 5.0 V
Packaging: Cut Tape (CT)
Package / Case: 16-TSSOP (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Output: Analog Voltage
Termination Style: Gull Wing
Voltage - Supply: 5V
Linearity: ±0.1°
Actuator Type: External Magnet, Not Included
Technology: Magnetoresistive
For Measuring: Angle
Supplier Device Package: PG-TDSO-16-1
Rotation Angle - Electrical, Mechanical: 0° ~ 180°
Output Signal: Cosine, Sine
Grade: Automotive
Qualification: AEC-Q100
auf Bestellung 1740 Stücke:
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5+4.66 EUR
10+4.45 EUR
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BGA628L7E6327 BGA628L7E6327 Infineon Technologies Description: IC RF AMP GPS 1.575GHZ TSLP7-1
Part Status: Active
Supplier Device Package: PG-TSLP-7-1
Noise Figure: 0.9dB
Current - Supply: 5.6mA
Gain: 18dB
Voltage - Supply: 2.4V ~ 3.2V
RF Type: GPS
Frequency: 1.575GHz
Mounting Type: Surface Mount
Package / Case: 6-XFDFN Exposed Pad
Packaging: Bulk
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ITS436L2SHKSA1 INFNS09387-1.pdf?t.download=true&u=5oefqw
ITS436L2SHKSA1
Hersteller: Infineon Technologies
Description: BUFFER/INVERTER PERIPHL DRIVER
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BTS430K2E3122A INFNS20608-1.pdf?t.download=true&u=5oefqw
BTS430K2E3122A
Hersteller: Infineon Technologies
Description: BUFFER/INVERTER PERIPHL DRIVER
Current - Output (Max): 36A
Voltage - Supply (Vcc/Vdd): Not Required
Voltage - Load: 4.5V ~ 32V
Input Type: Non-Inverting
Rds On (Typ): 30mOhm
Output Configuration: High Side
Operating Temperature: -40°C ~ 150°C (TJ)
Switch Type: General Purpose
Interface: On/Off
Number of Outputs: 1
Mounting Type: Surface Mount
Output Type: N-Channel
Package / Case: TO-263-6, D²Pak (5 Leads + Tab), TO-263BA
Features: Auto Restart, Slew Rate Controlled
Packaging: Bulk
Part Status: Active
Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, Over Voltage
Supplier Device Package: P-TO220-5-122
Ratio - Input:Output: 1:1
Produkt ist nicht verfügbar
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BTS436L2GNTMA1 INFNS05499-1.pdf?t.download=true&u=5oefqw
BTS436L2GNTMA1
Hersteller: Infineon Technologies
Description: BUFFER/INVERTER PERIPHL DRIVER
Part Status: Active
Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Load, Over Temperature, Over Voltage, Short Circuit, UVLO
Supplier Device Package: PG-TO263-5-2
Ratio - Input:Output: 1:1
Current - Output (Max): 9.8A
Voltage - Supply (Vcc/Vdd): Not Required
Voltage - Load: 4.75V ~ 41V
Input Type: Non-Inverting
Rds On (Typ): 35mOhm
Output Configuration: High Side
Operating Temperature: -40°C ~ 150°C (TJ)
Switch Type: General Purpose
Interface: On/Off
Number of Outputs: 1
Mounting Type: Surface Mount
Output Type: N-Channel
Package / Case: TO-263-5, D²Pak (4 Leads + Tab), TO-263BB
Features: Slew Rate Controlled
Packaging: Bulk
Produkt ist nicht verfügbar
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BFR182E-6327 INFNS10845-1.pdf?t.download=true&u=5oefqw
BFR182E-6327
Hersteller: Infineon Technologies
Description: RF N-CHANNEL MOSFET
Produkt ist nicht verfügbar
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2EDF9275FXUMA1 Infineon-2EDF7275F-DS-v02_04-EN.pdf?fileId=5546d462636cc8fb0163b08fd9203057
2EDF9275FXUMA1
Hersteller: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 16SOIC
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 650 V
Supplier Device Package: PG-DSO-16-11
Rise / Fall Time (Typ): 6.5ns, 4.5ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, SiC MOSFET
Logic Voltage - VIL, VIH: -, 1.65V
Current - Peak Output (Source, Sink): 4A, 8A
Part Status: Active
DigiKey Programmable: Not Verified
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2500+3.39 EUR
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2EDF9275FXUMA1 Infineon-2EDF7275F-DS-v02_04-EN.pdf?fileId=5546d462636cc8fb0163b08fd9203057
2EDF9275FXUMA1
Hersteller: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 16SOIC
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 650 V
Supplier Device Package: PG-DSO-16-11
Rise / Fall Time (Typ): 6.5ns, 4.5ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, SiC MOSFET
Logic Voltage - VIL, VIH: -, 1.65V
Current - Peak Output (Source, Sink): 4A, 8A
Part Status: Active
DigiKey Programmable: Not Verified
auf Bestellung 3060 Stücke:
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4+6.33 EUR
10+4.76 EUR
25+4.37 EUR
100+3.94 EUR
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FS200R12PT4BOSA1 Infineon-FS200R12PT4-DS-v02_02-en_de.pdf?fileId=db3a30432239cccd01230df5d3f555e9
FS200R12PT4BOSA1
Hersteller: Infineon Technologies
Description: IGBT MOD 1200V 280A 1000W MOD
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 200A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 280 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 1000 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 14 nF @ 25 V
auf Bestellung 27 Stücke:
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1+290.49 EUR
12+262.49 EUR
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BTS611L1E3128ANTMA1 INFNS05471-1.pdf?t.download=true&u=5oefqw
BTS611L1E3128ANTMA1
Hersteller: Infineon Technologies
Description: 2 CH HIGH-SIDE POWER SWITCH
Part Status: Active
Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, Over Voltage, Short Circuit, UVLO
Supplier Device Package: P-TO263-7-2
Ratio - Input:Output: 1:1
Current - Output (Max): 4.4A
Voltage - Supply (Vcc/Vdd): Not Required
Voltage - Load: 5V ~ 34V
Input Type: Non-Inverting
Rds On (Typ): 160mOhm
Output Configuration: High Side
Operating Temperature: -40°C ~ 150°C (TJ)
Switch Type: General Purpose
Interface: Logic
Number of Outputs: 2
Mounting Type: Surface Mount
Output Type: N-Channel
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Features: Auto Restart, Slew Rate Controlled
Packaging: Bulk
auf Bestellung 71296 Stücke:
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AnzahlPrivatkunde
137+4.18 EUR
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BSC0910NDIATMA1 Infineon-BSC0910NDI-DS-v02_00-en.pdf?fileId=db3a304336ca04c90136cedc08b64926
BSC0910NDIATMA1
Hersteller: Infineon Technologies
Description: MOSFET 2N-CH 25V 11A/31A TISON8
Part Status: Active
Supplier Device Package: PG-TISON-8
Vgs(th) (Max) @ Id: 2V @ 250µA
FET Feature: Logic Level Gate, 4.5V Drive
Gate Charge (Qg) (Max) @ Vgs: 6.6nC @ 4.5V
Rds On (Max) @ Id, Vgs: 4.6mOhm @ 25A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 4500pF @ 12V
Current - Continuous Drain (Id) @ 25°C: 11A, 31A
Drain to Source Voltage (Vdss): 25V
Power - Max: 1W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual) Asymmetrical
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
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5000+1.54 EUR
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BSC0910NDIATMA1 Infineon-BSC0910NDI-DS-v02_00-en.pdf?fileId=db3a304336ca04c90136cedc08b64926
BSC0910NDIATMA1
Hersteller: Infineon Technologies
Description: MOSFET 2N-CH 25V 11A/31A TISON8
Part Status: Active
Supplier Device Package: PG-TISON-8
Vgs(th) (Max) @ Id: 2V @ 250µA
FET Feature: Logic Level Gate, 4.5V Drive
Gate Charge (Qg) (Max) @ Vgs: 6.6nC @ 4.5V
Rds On (Max) @ Id, Vgs: 4.6mOhm @ 25A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 4500pF @ 12V
Current - Continuous Drain (Id) @ 25°C: 11A, 31A
Drain to Source Voltage (Vdss): 25V
Power - Max: 1W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual) Asymmetrical
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
auf Bestellung 10182 Stücke:
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5+4.86 EUR
10+3.3 EUR
100+2.26 EUR
500+1.82 EUR
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BSP372NH6327XTSA1 BSP372N_rev2+0.pdf?folderId=db3a3043156fd573011622e10b5c1f67&fileId=db3a30433dd58def013dd8e68ae413f6
BSP372NH6327XTSA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 100V 1.8A SOT223-4
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.8A (Ta)
Rds On (Max) @ Id, Vgs: 230mOhm @ 1.8A, 10V
Power Dissipation (Max): 1.8W (Ta)
Vgs(th) (Max) @ Id: 1.8V @ 218µA
Supplier Device Package: PG-SOT223-4
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 14.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 329 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 65000 Stücke:
Lieferzeit 10-14 Tag (e)
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1000+0.71 EUR
2000+0.65 EUR
3000+0.62 EUR
5000+0.58 EUR
7000+0.56 EUR
10000+0.54 EUR
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BCR196WH6327XTSA1 bcr196series.pdf?folderId=db3a30431400ef68011406f3ddb1012e&fileId=db3a30431428a37301144048156b02db
BCR196WH6327XTSA1
Hersteller: Infineon Technologies
Description: TRANS PREBIAS PNP 50V SOT323
Resistors Included: R1 and R2
Supplier Device Package: PG-SOT323
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 5mA, 5V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Transistor Type: PNP - Pre-Biased
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Packaging: Bulk
Resistor - Emitter Base (R2): 22 kOhms
Resistor - Base (R1): 47 kOhms
Frequency - Transition: 150 MHz
Power - Max: 250 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 70 mA
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4486+0.13 EUR
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BCR196E6327HTSA1 bcr196series.pdf?folderId=db3a30431400ef68011406f3ddb1012e&fileId=db3a30431428a37301144048156b02db
BCR196E6327HTSA1
Hersteller: Infineon Technologies
Description: TRANS PREBIAS PNP 50V SOT23
Resistors Included: R1 and R2
Resistor - Emitter Base (R2): 22 kOhms
Resistor - Base (R1): 47 kOhms
Frequency - Transition: 150 MHz
Power - Max: 200 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 70 mA
Supplier Device Package: PG-SOT23
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 5mA, 5V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Transistor Type: PNP - Pre-Biased
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Bulk
auf Bestellung 156000 Stücke:
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6648+0.089 EUR
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BB831E7904HTSA1 BB831.pdf
BB831E7904HTSA1
Hersteller: Infineon Technologies
Description: DIODE VAR CAP 30V 20MA SOD-323
Packaging: Bulk
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Diode Type: Single
Operating Temperature: -55°C ~ 125°C (TJ)
Capacitance @ Vr, F: 1.2pF @ 28V, 1MHz
Capacitance Ratio Condition: C1/C28
Supplier Device Package: PG-SOD323-3D
Part Status: Obsolete
Voltage - Peak Reverse (Max): 30 V
Capacitance Ratio: 9.5
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AnzahlPrivatkunde
2077+0.26 EUR
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BB831E7904 INFNS11653-1.pdf?t.download=true&u=5oefqw
BB831E7904
Hersteller: Infineon Technologies
Description: VARIABLE CAPACITANCE DIODE
Packaging: Bulk
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Diode Type: Single
Operating Temperature: -55°C ~ 125°C (TJ)
Capacitance @ Vr, F: 1.2pF @ 28V, 1MHz
Capacitance Ratio Condition: C1/C28
Supplier Device Package: PG-SOD323-2
Part Status: Active
Voltage - Peak Reverse (Max): 30 V
Capacitance Ratio: 9.5
Produkt ist nicht verfügbar
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BTS730CT INFNS12421-1.pdf?t.download=true&u=5oefqw
BTS730CT
Hersteller: Infineon Technologies
Description: FLUORESCENT LIGHT CONTROLLER
Produkt ist nicht verfügbar
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BTS730NT
Hersteller: Infineon Technologies
Description: IC PWR PWM N-CH 1:1 DSO-20
Produkt ist nicht verfügbar
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XMC1404F064X0200AAXUMA1 Infineon-XMC1400-DS-v01_03-EN.pdf?fileId=5546d46250cc1fdf015110a2596343b2
XMC1404F064X0200AAXUMA1
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 200KB FLASH 64LQFP
Packaging: Tape & Reel (TR)
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 200KB (200K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: A/D 12x12b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V
Connectivity: CANbus, I2C, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, I2S, LED, POR, PWM, WDT
Supplier Device Package: PG-LQFP-64-26
Part Status: Active
Number of I/O: 48
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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IAUZ20N08S5L300ATMA1 Infineon-IAUZ20N08S5L300-DataSheet-v01_00-EN.pdf?fileId=5546d4626f1cf1c5016f1e6316a2012e
IAUZ20N08S5L300ATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 80V 20A 8TSDSON-32
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 30mOhm @ 10A, 10V
Power Dissipation (Max): 30W (Tc)
Vgs(th) (Max) @ Id: 2V @ 8µA
Supplier Device Package: PG-TSDSON-8-32
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 10.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 599 pF @ 40 V
Grade: Automotive
Qualification: AEC-Q101
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Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
5000+0.5 EUR
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IAUZ20N08S5L300ATMA1 Infineon-IAUZ20N08S5L300-DataSheet-v01_00-EN.pdf?fileId=5546d4626f1cf1c5016f1e6316a2012e
IAUZ20N08S5L300ATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 80V 20A 8TSDSON-32
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 30mOhm @ 10A, 10V
Power Dissipation (Max): 30W (Tc)
Vgs(th) (Max) @ Id: 2V @ 8µA
Supplier Device Package: PG-TSDSON-8-32
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 10.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 599 pF @ 40 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 5583 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
10+2.14 EUR
16+1.34 EUR
100+0.88 EUR
500+0.69 EUR
1000+0.62 EUR
2000+0.57 EUR
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IRF7805ZTRPBF-1 IRF7805ZPbF-1_11-20-13.pdf
IRF7805ZTRPBF-1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 30V 16A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Ta)
Rds On (Max) @ Id, Vgs: 6.8mOhm @ 16A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 2.25V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2080 pF @ 15 V
Produkt ist nicht verfügbar
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SAK-C167CR-L33MTR
Hersteller: Infineon Technologies
Description: LEGACY 16-BIT MCU
Packaging: Bulk
Part Status: Active
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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IR38165MTRPBFAUMA1 Infineon-IR38163M%20IR38165M%20IR38363M%20IR38365M%20Datasheet-DS-v03_20-EN.pdf?fileId=5546d4625b62cd8a015bcf81f1526e4c
IR38165MTRPBFAUMA1
Hersteller: Infineon Technologies
Description: IC REG BUCK ADJ 30A 24PQFN
Packaging: Tape & Reel (TR)
Package / Case: 24-PowerVFQFN
Output Type: Adjustable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 30A
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Frequency - Switching: 150kHz ~ 1.5MHz
Voltage - Input (Max): 16V
Topology: Buck
Supplier Device Package: 24-PQFN (5x7)
Synchronous Rectifier: Yes
Voltage - Output (Max): 14V
Voltage - Input (Min): 1.5V
Voltage - Output (Min/Fixed): 0.5V
Part Status: Active
Produkt ist nicht verfügbar
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IR38165MTRPBFAUMA1 Infineon-IR38163M%20IR38165M%20IR38363M%20IR38365M%20Datasheet-DS-v03_20-EN.pdf?fileId=5546d4625b62cd8a015bcf81f1526e4c
IR38165MTRPBFAUMA1
Hersteller: Infineon Technologies
Description: IC REG BUCK ADJ 30A 24PQFN
Part Status: Active
Voltage - Output (Min/Fixed): 0.5V
Voltage - Input (Min): 1.5V
Voltage - Output (Max): 14V
Synchronous Rectifier: Yes
Supplier Device Package: 24-PQFN (5x7)
Topology: Buck
Voltage - Input (Max): 16V
Frequency - Switching: 150kHz ~ 1.5MHz
Output Configuration: Positive
Operating Temperature: -40°C ~ 125°C (TJ)
Current - Output: 30A
Function: Step-Down
Number of Outputs: 1
Mounting Type: Surface Mount
Output Type: Adjustable
Package / Case: 24-PowerVFQFN
Packaging: Cut Tape (CT)
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DEMO-PTOOL-300W-M Infineon-DEMO-PTOOL-300W-M%20User%20Guide-UM-v01_01-EN.pdf?fileId=5546d4625cc9456a015ce51926c20951
DEMO-PTOOL-300W-M
Hersteller: Infineon Technologies
Description: EVAL POWER TOOL
Packaging: Box
Function: Motor Controller/Driver
Type: Power Management
Contents: Board(s)
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TDA5101XUMA3 Part_Number_Guide_Web.pdf
Hersteller: Infineon Technologies
Description: TRANSMITTER ASK/FSK P-TSSOP-16
Packaging: Tape & Reel (TR)
Part Status: Obsolete
Produkt ist nicht verfügbar
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TDA5101XUMA1 TDA5101XUMA1_Web.pdf
TDA5101XUMA1
Hersteller: Infineon Technologies
Description: RF TX IC ASK/FSK 315MHZ 16TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Frequency: 315MHz
Modulation or Protocol: ASK, FSK
Operating Temperature: -25°C ~ 85°C
Voltage - Supply: 2.1V ~ 4V
Power - Output: 5dBm
Applications: ISM
Supplier Device Package: PG-TSSOP-16-1
Part Status: Obsolete
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TDA5101XUMA2 Part_Number_Guide_Web.pdf
Hersteller: Infineon Technologies
Description: TRANSMITTER ASK/FSK P-TSSOP-16
Packaging: Tape & Reel (TR)
Part Status: Obsolete
Produkt ist nicht verfügbar
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IRFR9N20DTRPBF irfr9n20dpbf.pdf?fileId=5546d462533600a40153563610b1213b
IRFR9N20DTRPBF
Hersteller: Infineon Technologies
Description: MOSFET N-CH 200V 9.4A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.4A (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 5.6A, 10V
Power Dissipation (Max): 86W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 560 pF @ 25 V
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111-4126PBF
Hersteller: Infineon Technologies
Description: IC GATE DRIVER SMD
Produkt ist nicht verfügbar
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CY9AF311NABGL-GE1 Infineon-CY9A310A_Series_32_Bit_Arm_Cortex_M3_FM3_Microcontroller-DataSheet-v06_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ede11f262e1&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
CY9AF311NABGL-GE1
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 64KB FLASH 112PFBGA
Produkt ist nicht verfügbar
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CY9AF111NABGL-GE1 Infineon-CY9A110A_CY9A110_Series_32_Bit_Arm_Cortex_M3_FM3_Microcontroller-DataSheet-v07_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0eddff4562bb&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-fil
CY9AF111NABGL-GE1
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 64KB FLASH 112PFBGA
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IPW65R190E6 INFN-S-A0004583440-1.pdf?t.download=true&u=5oefqw
IPW65R190E6
Hersteller: Infineon Technologies
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20.2A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 7.3A, 10V
Power Dissipation (Max): 151W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 730µA
Supplier Device Package: PG-TO247-3-41
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 73 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1620 pF @ 100 V
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160+3.63 EUR
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IPW65R190C6 INFNS15520-1.pdf?t.download=true&u=5oefqw
IPW65R190C6
Hersteller: Infineon Technologies
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20.2A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 7.3A, 10V
Power Dissipation (Max): 151W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 730µA
Supplier Device Package: PG-TO247-3-41
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 73 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1620 pF @ 100 V
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IPI65R190C Infineon-IPX65R190CFD-DS-v02_07-en.pdf?fileId=db3a30432fd0c54a012fded065a8309b
IPI65R190C
Hersteller: Infineon Technologies
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20.2A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 7.3A, 10V
Power Dissipation (Max): 151W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 730µA
Supplier Device Package: PG-TO262-3-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 73 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1620 pF @ 100 V
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163+3.88 EUR
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BSP372NH6327XTSA1 BSP372N_rev2+0.pdf?folderId=db3a3043156fd573011622e10b5c1f67&fileId=db3a30433dd58def013dd8e68ae413f6
BSP372NH6327XTSA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 100V 1.8A SOT223-4
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.8A (Ta)
Rds On (Max) @ Id, Vgs: 230mOhm @ 1.8A, 10V
Power Dissipation (Max): 1.8W (Ta)
Vgs(th) (Max) @ Id: 1.8V @ 218µA
Supplier Device Package: PG-SOT223-4
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 14.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 329 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 65384 Stücke:
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9+2.48 EUR
14+1.55 EUR
100+1.01 EUR
500+0.79 EUR
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DPS368XTSA1 Infineon-DPS368-DS-v01_00-EN.pdf?fileId=5546d46269e1c019016a0c45105d4b40
DPS368XTSA1
Hersteller: Infineon Technologies
Description: SENSOR 17.4PSIG 24BIT 8VLGA
Features: Temperature Compensated
Packaging: Cut Tape (CT)
Package / Case: 8-VFLGA
Output Type: I2C, SPI
Mounting Type: Surface Mount
Output: 24 b
Operating Pressure: 4.35PSI ~ 17.4PSI (30kPa ~ 120kPa)
Pressure Type: Vented Gauge
Accuracy: ±0.015PSI (±0.1kPa)
Operating Temperature: -40°C ~ 85°C
Termination Style: SMD (SMT) Tab
Voltage - Supply: 1.7V ~ 3.6V
Applications: Board Mount
Supplier Device Package: PG-VLGA-8-1
Port Style: No Port
Maximum Pressure: 145PSI (999.74kPa)
Part Status: Active
Produkt ist nicht verfügbar
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DDB6U134N16RRB11BPSA1 PressFIT_Portfolio_PB_05-2016.pdf
DDB6U134N16RRB11BPSA1
Hersteller: Infineon Technologies
Description: IGBT MODULE
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single Chopper
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 75A
NTC Thermistor: Yes
Supplier Device Package: AG-ECONO2B
Part Status: Active
Current - Collector (Ic) (Max): 125 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 400 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 5.1 nF @ 25 V
Produkt ist nicht verfügbar
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S29GL128P90TFIR10 128_Mbit_3_V_Page_Flash_with_90_nm_MirrorBit_Process_Technology-DataSheet-v03_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed7850458a5&utm_source=cypress&utm_medium=ref
S29GL128P90TFIR10
Hersteller: Infineon Technologies
Description: IC FLASH 128MBIT PARALLEL 56TSOP
DigiKey Programmable: Verified
Technology: FLASH - NOR
Voltage - Supply: 2.7V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Memory Type: Non-Volatile
Memory Size: 128Mbit
Mounting Type: Surface Mount
Package / Case: 56-TFSOP (0.724", 18.40mm Width)
Packaging: Tray
Memory Organization: 16M x 8
Access Time: 90 ns
Memory Interface: Parallel
Write Cycle Time - Word, Page: 90ns
Part Status: Active
Supplier Device Package: 56-TSOP
Memory Format: FLASH
auf Bestellung 367 Stücke:
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AnzahlPrivatkunde
2+12.9 EUR
10+11.78 EUR
25+11.55 EUR
40+11.47 EUR
91+10.29 EUR
273+10.26 EUR
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TD320N18SOFHPSA1 Infineon-TT320N18SOF-DS-v03_01-EN.pdf?fileId=5546d4625cc9456a015d06e572e77eea
TD320N18SOFHPSA1
Hersteller: Infineon Technologies
Description: SCR MODULE 1.8KV 520A MODULE
Structure: Series Connection - SCR/Diode
Operating Temperature: -40°C ~ 130°C
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Tray
Voltage - Off State: 1.8 kV
Current - On State (It (RMS)) (Max): 520 A
Voltage - Gate Trigger (Vgt) (Max): 2 V
Current - On State (It (AV)) (Max): 320 A
Number of SCRs, Diodes: 1 SCR, 1 Diode
Current - Non Rep. Surge 50, 60Hz (Itsm): 9500A @ 50Hz
Current - Gate Trigger (Igt) (Max): 150 mA
Current - Hold (Ih) (Max): 150 mA
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BFP420FH6327 INFNS27308-1.pdf?t.download=true&u=5oefqw
Hersteller: Infineon Technologies
Description: RF TRANSISTOR, X BAND, NPN
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: 4-SMD, Flat Leads
Packaging: Bulk
Part Status: Active
Supplier Device Package: 4-TSFP
Noise Figure (dB Typ @ f): 0.9dB ~ 2.2dB @ 150MHz ~ 5.5GHz
Frequency - Transition: 25GHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 4V
Voltage - Collector Emitter Breakdown (Max): 4.5V
Current - Collector (Ic) (Max): 60mA
Power - Max: 210mW
Gain: 37dB
Operating Temperature: 150°C (TJ)
Produkt ist nicht verfügbar
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BFP420H6801 INFNS15718-1.pdf?t.download=true&u=5oefqw
BFP420H6801
Hersteller: Infineon Technologies
Description: RF TRANSISTOR, X BAND, NPN
Part Status: Active
Supplier Device Package: PG-SOT343-4-2
Noise Figure (dB Typ @ f): 1.1dB @ 1.8GHz
Frequency - Transition: 25GHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 20mA, 4V
Voltage - Collector Emitter Breakdown (Max): 4.5V
Current - Collector (Ic) (Max): 60mA
Power - Max: 210mW
Gain: 21dB
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: SC-82A, SOT-343
Packaging: Bulk
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BFP420H6433 INFNS15718-1.pdf?t.download=true&u=5oefqw
BFP420H6433
Hersteller: Infineon Technologies
Description: RF TRANSISTOR, X BAND, NPN
Part Status: Active
Supplier Device Package: PG-SOT343-4-2
Noise Figure (dB Typ @ f): 1.1dB @ 1.8GHz
Frequency - Transition: 25GHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 20mA, 4V
Voltage - Collector Emitter Breakdown (Max): 4.5V
Current - Collector (Ic) (Max): 60mA
Power - Max: 210mW
Gain: 21dB
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: SC-82A, SOT-343
Packaging: Bulk
Produkt ist nicht verfügbar
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BFP420H6740 INFNS15718-1.pdf?t.download=true&u=5oefqw
BFP420H6740
Hersteller: Infineon Technologies
Description: RF TRANSISTOR, X BAND, NPN
Part Status: Active
Supplier Device Package: PG-SOT343-4-2
Noise Figure (dB Typ @ f): 1.1dB @ 1.8GHz
Frequency - Transition: 25GHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 20mA, 4V
Voltage - Collector Emitter Breakdown (Max): 4.5V
Current - Collector (Ic) (Max): 60mA
Power - Max: 210mW
Gain: 21dB
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: SC-82A, SOT-343
Packaging: Bulk
Produkt ist nicht verfügbar
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BFP420E6327 INFNS15718-1.pdf?t.download=true&u=5oefqw
BFP420E6327
Hersteller: Infineon Technologies
Description: RF TRANS NPN 5V 25GHZ PG-SOT-343
Packaging: Bulk
Package / Case: SC-82A, SOT-343
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 21dB
Power - Max: 160mW
Current - Collector (Ic) (Max): 35mA
Voltage - Collector Emitter Breakdown (Max): 5V
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 20mA, 4V
Frequency - Transition: 25GHz
Noise Figure (dB Typ @ f): 1.1dB @ 1.8GHz
Supplier Device Package: PG-SOT343-4
Part Status: Active
auf Bestellung 133763 Stücke:
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BFP420E6327BTSA1 BFP420_Rev2013.pdf
BFP420E6327BTSA1
Hersteller: Infineon Technologies
Description: RF TRANS NPN 5V 25GHZ PG-SOT-343
Packaging: Tape & Reel (TR)
Package / Case: SC-82A, SOT-343
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 21dB
Power - Max: 160mW
Current - Collector (Ic) (Max): 35mA
Voltage - Collector Emitter Breakdown (Max): 5V
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 20mA, 4V
Frequency - Transition: 25GHz
Noise Figure (dB Typ @ f): 1.1dB @ 1.8GHz
Supplier Device Package: PG-SOT343-3D
Part Status: Obsolete
Produkt ist nicht verfügbar
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BFP420E6433HTMA1 BFP420_Rev2013.pdf
BFP420E6433HTMA1
Hersteller: Infineon Technologies
Description: RF TRANS NPN 5V 25GHZ PG-SOT-343
Packaging: Tape & Reel (TR)
Package / Case: SC-82A, SOT-343
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 21dB
Power - Max: 160mW
Current - Collector (Ic) (Max): 35mA
Voltage - Collector Emitter Breakdown (Max): 5V
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 20mA, 4V
Frequency - Transition: 25GHz
Noise Figure (dB Typ @ f): 1.1dB @ 1.8GHz
Supplier Device Package: PG-SOT343-3D
Part Status: Obsolete
Produkt ist nicht verfügbar
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BFP 420F E6327 bfp420.pdf
BFP 420F E6327
Hersteller: Infineon Technologies
Description: RF TRANS NPN 5V 25GHZ 4-TSFP
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, Flat Leads
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 19.5dB
Power - Max: 160mW
Current - Collector (Ic) (Max): 35mA
Voltage - Collector Emitter Breakdown (Max): 5V
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 4V
Frequency - Transition: 25GHz
Noise Figure (dB Typ @ f): 1.1dB @ 1.8GHz
Supplier Device Package: 4-TSFP
Part Status: Obsolete
Produkt ist nicht verfügbar
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BTS70061EPPXUMA1 BTS7006-1EPP_v1.03_4-29-19.pdf
BTS70061EPPXUMA1
Hersteller: Infineon Technologies
Description: IC PWR SWTCH N-CHAN 1:1 TSDSO-14
Packaging: Tape & Reel (TR)
Package / Case: 14-TSSOP (0.154", 3.90mm Width) Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 6.6mOhm
Input Type: Non-Inverting
Voltage - Load: 6V ~ 18V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 12.5A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-TSDSO-14-22
Fault Protection: Over Current, Over Voltage, Short Circuit, UVLO
Grade: Automotive
Part Status: Active
Qualification: AEC-Q100
auf Bestellung 3000 Stücke:
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AnzahlPrivatkunde
3000+1.76 EUR
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BTS70061EPPXUMA1 BTS7006-1EPP_v1.03_4-29-19.pdf
BTS70061EPPXUMA1
Hersteller: Infineon Technologies
Description: IC PWR SWTCH N-CHAN 1:1 TSDSO-14
Packaging: Cut Tape (CT)
Package / Case: 14-TSSOP (0.154", 3.90mm Width) Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 6.6mOhm
Input Type: Non-Inverting
Voltage - Load: 6V ~ 18V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 12.5A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-TSDSO-14-22
Fault Protection: Over Current, Over Voltage, Short Circuit, UVLO
Grade: Automotive
Part Status: Active
Qualification: AEC-Q100
auf Bestellung 7937 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
6+3.5 EUR
10+2.58 EUR
25+2.36 EUR
100+2.09 EUR
250+1.98 EUR
500+1.9 EUR
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IRFC7313B
Hersteller: Infineon Technologies
Description: MOSFET 30V DIE
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
Supplier Device Package: Die
Part Status: Obsolete
Drain to Source Voltage (Vdss): 30 V
Produkt ist nicht verfügbar
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TLE4276GV10 INFNS14692-1.pdf?t.download=true&u=5oefqw
TLE4276GV10
Hersteller: Infineon Technologies
Description: IC REG LIN 10V 400MA TO263-5-1
Packaging: Bulk
Package / Case: TO-263-6, D2PAK (5 Leads + Tab), TO-263BA
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 400mA
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 220 µA
Voltage - Input (Max): 40V
Number of Regulators: 1
Supplier Device Package: PG-TO263-5-1
Voltage - Output (Min/Fixed): 10V
Control Features: Inhibit
Grade: Automotive
Part Status: Active
PSRR: 54dB (100Hz)
Voltage Dropout (Max): 0.5V @ 250mA
Protection Features: Antisaturation, Over Temperature, Reverse Polarity, Short Circuit
Current - Supply (Max): 25 mA
Qualification: AEC-Q100
auf Bestellung 8722 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
228+2.36 EUR
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TLE4276GV85 INFNS14692-1.pdf?t.download=true&u=5oefqw
TLE4276GV85
Hersteller: Infineon Technologies
Description: IC REG LINEAR FIXED LDO REG
Packaging: Bulk
Package / Case: TO-263-6, D²Pak (5 Leads + Tab), TO-263BA
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 400mA
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 200 µA
Voltage - Input (Max): 40V
Number of Regulators: 1
Supplier Device Package: PG-TO263-5-1
Voltage - Output (Min/Fixed): 8.5V
Control Features: Inhibit
Part Status: Active
PSRR: 54dB (100Hz)
Voltage Dropout (Max): 0.5V @ 250mA
Protection Features: Antisaturation, Over Current, Over Temperature, Reverse Polarity, Short Circuit
Current - Supply (Max): 25 mA
Produkt ist nicht verfügbar
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ICD22V03X1SA1 Part_Number_Guide_Web.pdf
Hersteller: Infineon Technologies
Description: CHIP BARE DIE
Packaging: Bulk
Part Status: Obsolete
Produkt ist nicht verfügbar
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ICD22V04X1SA1 Part_Number_Guide_Web.pdf
Hersteller: Infineon Technologies
Description: CHIP BARE DIE
Packaging: Bulk
Part Status: Obsolete
Produkt ist nicht verfügbar
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ICD22V05X1SA1 Part_Number_Guide_Web.pdf
Hersteller: Infineon Technologies
Description: CHIP BARE DIE
Packaging: Bulk
Part Status: Obsolete
Produkt ist nicht verfügbar
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XMC1301Q040F0032ABXUMA1 Infineon-xmc1300_AB-DS-v01_06-EN.pdf?fileId=5546d4624a0bf290014a4bdb073c25c6
XMC1301Q040F0032ABXUMA1
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 32KB FLASH 40VQFN
DigiKey Programmable: Not Verified
Number of I/O: 27
Part Status: Active
Supplier Device Package: PG-VQFN-40-13
Peripherals: Brown-out Detect/Reset, I2S, POR, PWM, WDT
Connectivity: I2C, LINbus, SPI, UART/USART
Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V
Core Size: 32-Bit Single-Core
Data Converters: A/D 16x12b
Core Processor: ARM® Cortex®-M0
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 85°C (TA)
RAM Size: 16K x 8
Program Memory Size: 32KB (32K x 8)
Speed: 32MHz
Mounting Type: Surface Mount
Package / Case: 40-VFQFN Exposed Pad
Packaging: Cut Tape (CT)
auf Bestellung 4970 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
4+5.65 EUR
10+5.08 EUR
25+4.81 EUR
100+4.16 EUR
250+3.95 EUR
500+3.55 EUR
1000+2.99 EUR
2500+2.84 EUR
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TLE5109A16E2210XUMA1 infineon-tle5x09a16-d-datasheet-en.pdf
TLE5109A16E2210XUMA1
Hersteller: Infineon Technologies
Description: IC ANGLE SENSOR 5.0 V
Packaging: Tape & Reel (TR)
Package / Case: 16-TSSOP (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Output: Analog Voltage
Termination Style: Gull Wing
Voltage - Supply: 5V
Linearity: ±0.1°
Actuator Type: External Magnet, Not Included
Technology: Magnetoresistive
For Measuring: Angle
Supplier Device Package: PG-TDSO-16-1
Rotation Angle - Electrical, Mechanical: 0° ~ 180°
Output Signal: Cosine, Sine
Grade: Automotive
Qualification: AEC-Q100
Produkt ist nicht verfügbar
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TLE5109A16E2210XUMA1 infineon-tle5x09a16-d-datasheet-en.pdf
TLE5109A16E2210XUMA1
Hersteller: Infineon Technologies
Description: IC ANGLE SENSOR 5.0 V
Packaging: Cut Tape (CT)
Package / Case: 16-TSSOP (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Output: Analog Voltage
Termination Style: Gull Wing
Voltage - Supply: 5V
Linearity: ±0.1°
Actuator Type: External Magnet, Not Included
Technology: Magnetoresistive
For Measuring: Angle
Supplier Device Package: PG-TDSO-16-1
Rotation Angle - Electrical, Mechanical: 0° ~ 180°
Output Signal: Cosine, Sine
Grade: Automotive
Qualification: AEC-Q100
auf Bestellung 1740 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
4+5.24 EUR
5+4.66 EUR
10+4.45 EUR
25+4.2 EUR
50+4.03 EUR
100+3.88 EUR
500+3.56 EUR
1000+3.44 EUR
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BGA628L7E6327
BGA628L7E6327
Hersteller: Infineon Technologies
Description: IC RF AMP GPS 1.575GHZ TSLP7-1
Part Status: Active
Supplier Device Package: PG-TSLP-7-1
Noise Figure: 0.9dB
Current - Supply: 5.6mA
Gain: 18dB
Voltage - Supply: 2.4V ~ 3.2V
RF Type: GPS
Frequency: 1.575GHz
Mounting Type: Surface Mount
Package / Case: 6-XFDFN Exposed Pad
Packaging: Bulk
auf Bestellung 4887 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
547+1.05 EUR
Mindestbestellmenge: 547 Stücke
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