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IRFC3205B Infineon Technologies Description: MOSFET 55V 110A DIE
Drain to Source Voltage (Vdss): 55 V
Part Status: Obsolete
Supplier Device Package: Die
Rds On (Max) @ Id, Vgs: 8mOhm @ 110A, 10V
Current - Continuous Drain (Id) @ 25°C: 110A
Technology: MOSFET (Metal Oxide)
Mounting Type: Surface Mount
Package / Case: Die
Packaging: Bulk
Produkt ist nicht verfügbar
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IMW120R090M1HXKSA1 IMW120R090M1HXKSA1 Infineon Technologies Infineon-IMW120R090M1H-DS-v01_01-EN.pdf?fileId=5546d46269e1c019016a92fd64376684 Description: SICFET N-CH 1.2KV 26A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
Rds On (Max) @ Id, Vgs: 117mOhm @ 8.5A, 18V
Power Dissipation (Max): 115W (Tc)
Vgs(th) (Max) @ Id: 5.7V @ 3.7mA
Supplier Device Package: PG-TO247-3-41
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 707 pF @ 800 V
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IPP80N06S2-07AKSA4 IPP80N06S2-07AKSA4 Infineon Technologies INFNS14920-1.pdf?t.download=true&u=5oefqw Description: N-CHANNEL POWER MOSFET
Input Capacitance (Ciss) (Max) @ Vds: 3400 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Drain to Source Voltage (Vdss): 55 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PG-TO220-3-1
Vgs(th) (Max) @ Id: 4V @ 180µA
Power Dissipation (Max): 250W (Tc)
Rds On (Max) @ Id, Vgs: 6.6mOhm @ 68A, 10V
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Bulk
Produkt ist nicht verfügbar
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SPP80N06S-08 SPP80N06S-08 Infineon Technologies spp_b_i80n06s-08green.pdf?t.download=true&u=5oefqw Description: N-CHANNEL POWER MOSFET
Qualification: AEC-Q101
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PG-TO220-3-1
Vgs(th) (Max) @ Id: 4V @ 240µA
Power Dissipation (Max): 300W (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 80A, 10V
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Bulk
Input Capacitance (Ciss) (Max) @ Vds: 3660 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 187 nC @ 10 V
Drain to Source Voltage (Vdss): 55 V
Vgs (Max): ±20V
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SPP80N06S209 SPP80N06S209 Infineon Technologies SPBP80N06S2-09.pdf?t.download=true&u=5oefqw Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 9.1mOhm @ 50A, 10V
Power Dissipation (Max): 190W (Tc)
Vgs(th) (Max) @ Id: 4V @ 125µA
Supplier Device Package: PG-TO220-3-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3140 pF @ 25 V
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IPP80N06S2L-06 IPP80N06S2L-06 Infineon Technologies INFNS09542-1.pdf?t.download=true&u=5oefqw Description: N-CHANNEL POWER MOSFET
Input Capacitance (Ciss) (Max) @ Vds: 3800 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V
Drain to Source Voltage (Vdss): 55 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PG-TO220-3-1
Vgs(th) (Max) @ Id: 2V @ 180µA
Power Dissipation (Max): 250W (Tc)
Rds On (Max) @ Id, Vgs: 6.3mOhm @ 69A, 10V
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Bulk
Produkt ist nicht verfügbar
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SPB80N06SL2-7 SPB80N06SL2-7 Infineon Technologies spp_b_i80n06s2l-11.pdf?t.download=true&u=5oefqw Description: N-CHANNEL AUTOMOTIVE MOSFET
Packaging: Bulk
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 60A, 10V
Power Dissipation (Max): 210W (Tc)
Vgs(th) (Max) @ Id: 2V @ 150µA
Supplier Device Package: PG-TO263-3-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3160 pF @ 25 V
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IPP80N06S2L-05 IPP80N06S2L-05 Infineon Technologies INFNS09525-1.pdf?t.download=true&u=5oefqw Description: N-CHANNEL POWER MOSFET
Input Capacitance (Ciss) (Max) @ Vds: 5700 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 230 nC @ 10 V
Drain to Source Voltage (Vdss): 55 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PG-TO220-3-1
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 300W (Tc)
Rds On (Max) @ Id, Vgs: 4.8mOhm @ 80A, 10V
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Bulk
Produkt ist nicht verfügbar
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SPB80N06SL-07 Infineon Technologies spp_b_i80n06s2l-11.pdf?t.download=true&u=5oefqw Description: N-CHANNEL AUTOMOTIVE MOSFET
Part Status: Active
Packaging: Bulk
Produkt ist nicht verfügbar
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AUXDKG4PC40S-E Infineon Technologies Description: IC DISCRETE
Part Status: Obsolete
Packaging: Tube
Produkt ist nicht verfügbar
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IRG4BC20U IRG4BC20U Infineon Technologies IRG4BC20U.pdf Description: IGBT 600V 13A TO-220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 6.5A
Supplier Device Package: TO-220AB
Td (on/off) @ 25°C: 21ns/86ns
Switching Energy: 100µJ (on), 120µJ (off)
Test Condition: 480V, 6.5A, 50Ohm, 15V
Gate Charge: 27 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 13 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 52 A
Power - Max: 60 W
Produkt ist nicht verfügbar
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IRG4BC20UD IRG4BC20UD Infineon Technologies Infineon-IRG4BC20UD-DataSheet-v01_00-EN.pdf?fileId=5546d462533600a40153563f76dd2265 Description: IGBT 600V 13A TO-220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 37 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 6.5A
Supplier Device Package: TO-220AB
Td (on/off) @ 25°C: 39ns/93ns
Switching Energy: 160µJ (on), 130µJ (off)
Test Condition: 480V, 6.5A, 50Ohm, 15V
Gate Charge: 27 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 13 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 52 A
Power - Max: 60 W
Produkt ist nicht verfügbar
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IRG4BC20W IRG4BC20W Infineon Technologies IRG4BC20W.pdf Description: IGBT 600V 13A TO-220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 6.5A
Supplier Device Package: TO-220AB
Td (on/off) @ 25°C: 22ns/110ns
Switching Energy: 60µJ (on), 80µJ (off)
Test Condition: 480V, 6.5A, 50Ohm, 15V
Gate Charge: 26 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 13 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 52 A
Power - Max: 60 W
Produkt ist nicht verfügbar
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IRG4BC20F IRG4BC20F Infineon Technologies Infineon-IRG4BC20F-DataSheet-v01_00-EN.pdf?fileId=5546d462533600a40153563f29032251 Description: IGBT 600V 16A TO-220AB
Power - Max: 60 W
Current - Collector Pulsed (Icm): 64 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 16 A
Part Status: Obsolete
Gate Charge: 27 nC
Test Condition: 480V, 9A, 50Ohm, 15V
Switching Energy: 70µJ (on), 600µJ (off)
Td (on/off) @ 25°C: 24ns/190ns
Supplier Device Package: TO-220AB
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 9A
Input Type: Standard
Package / Case: TO-220-3
Packaging: Tube
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Produkt ist nicht verfügbar
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PX3143HDMSM1400XTMA1 Infineon Technologies Description: IC CONTROLLER
Produkt ist nicht verfügbar
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BC807-25WE6327 BC807-25WE6327 Infineon Technologies INFNS11647-1.pdf?t.download=true&u=5oefqw Description: TRANS PNP 45V 0.5A PG-SOT23-3-11
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 100mA, 1V
Frequency - Transition: 200MHz
Supplier Device Package: PG-SOT23-3-11
Part Status: Active
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 250 mW
auf Bestellung 360000 Stücke:
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BC807-25E6327 BC807-25E6327 Infineon Technologies INFNS11647-1.pdf?t.download=true&u=5oefqw Description: TRANS PNP 45V 0.5A PG-SOT23-3-11
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 100mA, 1V
Frequency - Transition: 200MHz
Supplier Device Package: PG-SOT23-3-11
Part Status: Active
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 330 mW
auf Bestellung 1643108 Stücke:
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7059+0.074 EUR
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BC80725E6327 BC80725E6327 Infineon Technologies INFNS11647-1.pdf?t.download=true&u=5oefqw Description: TRANS PNP 45V 0.5A PG-SOT23-3-11
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 100mA, 1V
Frequency - Transition: 200MHz
Supplier Device Package: PG-SOT23-3-11
Part Status: Active
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 330 mW
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7059+0.074 EUR
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BC807-25E6433 BC807-25E6433 Infineon Technologies INFNS11647-1.pdf?t.download=true&u=5oefqw Description: TRANS PNP 45V 0.5A PG-SOT23-3-11
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 100mA, 1V
Frequency - Transition: 200MHz
Supplier Device Package: PG-SOT23-3-11
Part Status: Active
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 330 mW
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SPPO4N80C3 SPPO4N80C3 Infineon Technologies Infineon-SPP04N80C3-DS-v02_91-en.pdf?fileId=db3a30432313ff5e0123a8f71e205c68 Description: N-CHANNEL POWER MOSFET
Input Capacitance (Ciss) (Max) @ Vds: 570 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Drain to Source Voltage (Vdss): 800 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PG-TO220-3
Vgs(th) (Max) @ Id: 3.9V @ 240µA
Power Dissipation (Max): 63W (Tc)
Rds On (Max) @ Id, Vgs: 1.3Ohm @ 2.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Bulk
Produkt ist nicht verfügbar
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EVAL1EDS20I12SVTOBO2 EVAL1EDS20I12SVTOBO2 Infineon Technologies Description: EVAL BOARD FOR 1EDS20I12SV
Packaging: Bulk
Function: Gate Driver
Type: Power Management
Contents: Board(s)
Utilized IC / Part: 1EDS20I12SV
Supplied Contents: Board(s)
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DDB6U180N16RRB11BPSA1 DDB6U180N16RRB11BPSA1 Infineon Technologies Infineon-DDB6U180N16RR_B11-DS-v03_00-EN.pdf?fileId=5546d462518ffd8501524095699c70bc Description: IGBT MOD 1200V 140A 515W
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: 3 Independent
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 100A
NTC Thermistor: No
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Part Status: Discontinued at Digi-Key
Current - Collector (Ic) (Max): 140 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 515 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 6.3 nF @ 25 V
Produkt ist nicht verfügbar
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FS100R12PT4BOSA1 FS100R12PT4BOSA1 Infineon Technologies Infineon-FS100R12PT4-DS-v02_02-en_de.pdf?fileId=db3a3043243b5f170124c4106aac11cd Description: IGBT MOD 1200V 135A 500W
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 100A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 135 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 500 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 6.3 nF @ 25 V
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IFS100B12N3E4B31BOSA1 IFS100B12N3E4B31BOSA1 Infineon Technologies Infineon-IFS100B12N3E4_B31-DS-v02_00-en_de.pdf?fileId=db3a3043293a15c4012945dfb6fb53c6 Description: IGBT MOD 1200V 200A 515W MOD
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Full Bridge
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 100A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 200 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 515 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 6.3 nF @ 25 V
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1+194.61 EUR
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IFS100B12N3E4_B39 Infineon Technologies IFS100B12N3E4_B39_Rev2_2013-03-06.pdf Description: IGBT MOD 1200V 100A 515W
Input Capacitance (Cies) @ Vce: 6.3 nF @ 25 V
Current - Collector Cutoff (Max): 1 mA
Power - Max: 515 W
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 100 A
IGBT Type: Trench Field Stop
Supplier Device Package: Module
NTC Thermistor: Yes
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 100A
Operating Temperature: 175°C (TJ)
Configuration: Three Phase Inverter
Input: Standard
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Bulk
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IPD50P04P413ATMA2 IPD50P04P413ATMA2 Infineon Technologies Infineon-IPD50P04P4-13-DataSheet-v01_03-EN.pdf?fileId=db3a30432f69f146012f781f908b2da3 Description: MOSFET P-CH 40V 50A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 12.6mOhm @ 50A, 10V
Power Dissipation (Max): 58W (Tc)
Vgs(th) (Max) @ Id: 4V @ 85µA
Supplier Device Package: PG-TO252-3-313
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3670 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 17500 Stücke:
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2500+0.87 EUR
5000+0.81 EUR
7500+0.77 EUR
12500+0.74 EUR
17500+0.73 EUR
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IPD50P04P413ATMA2 IPD50P04P413ATMA2 Infineon Technologies Infineon-IPD50P04P4-13-DataSheet-v01_03-EN.pdf?fileId=db3a30432f69f146012f781f908b2da3 Description: MOSFET P-CH 40V 50A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 12.6mOhm @ 50A, 10V
Power Dissipation (Max): 58W (Tc)
Vgs(th) (Max) @ Id: 4V @ 85µA
Supplier Device Package: PG-TO252-3-313
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3670 pF @ 25 V
Qualification: AEC-Q101
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100+1.34 EUR
500+1.06 EUR
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IMBF170R650M1XTMA1 IMBF170R650M1XTMA1 Infineon Technologies Infineon-IMBF170R650M1-DataSheet-v02_00-EN.pdf?fileId=5546d462712ef9b70171820c75bb1ad6 Description: SICFET N-CH 1700V 7.4A TO263-7
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.4A (Tc)
Rds On (Max) @ Id, Vgs: 650mOhm @ 1.5A, 15V
Power Dissipation (Max): 88W (Tc)
Vgs(th) (Max) @ Id: 5.7V @ 1.7mA
Supplier Device Package: PG-TO263-7-13
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 12V, 15V
Vgs (Max): +20V, -10V
Drain to Source Voltage (Vdss): 1700 V
Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 12 V
Input Capacitance (Ciss) (Max) @ Vds: 422 pF @ 1000 V
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IMBF170R650M1XTMA1 IMBF170R650M1XTMA1 Infineon Technologies Infineon-IMBF170R650M1-DataSheet-v02_00-EN.pdf?fileId=5546d462712ef9b70171820c75bb1ad6 Description: SICFET N-CH 1700V 7.4A TO263-7
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.4A (Tc)
Rds On (Max) @ Id, Vgs: 650mOhm @ 1.5A, 15V
Power Dissipation (Max): 88W (Tc)
Vgs(th) (Max) @ Id: 5.7V @ 1.7mA
Supplier Device Package: PG-TO263-7-13
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 12V, 15V
Vgs (Max): +20V, -10V
Drain to Source Voltage (Vdss): 1700 V
Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 12 V
Input Capacitance (Ciss) (Max) @ Vds: 422 pF @ 1000 V
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IPP120N06S403AKSA1 IPP120N06S403AKSA1 Infineon Technologies Infineon-I120N06S4_03-DS-v01_00-en.pdf?fileId=db3a30431ff98815012038c634110ccc Description: MOSFET N-CH 60V 120A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 3.2mOhm @ 100A, 10V
Power Dissipation (Max): 167W (Tc)
Vgs(th) (Max) @ Id: 4V @ 120µA
Supplier Device Package: PG-TO220-3-1
Grade: Automotive
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 160 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13150 pF @ 25 V
Qualification: AEC-Q101
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IPP120N06S402AKSA1 IPP120N06S402AKSA1 Infineon Technologies IPx120N06S4-02.pdf Description: MOSFET N-CH 60V 120A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 2.8mOhm @ 100A, 10V
Power Dissipation (Max): 188W (Tc)
Vgs(th) (Max) @ Id: 4V @ 140µA
Supplier Device Package: PG-TO220-3-1
Grade: Automotive
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 195 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 15750 pF @ 25 V
Qualification: AEC-Q101
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IPP120N06S402AKSA2 IPP120N06S402AKSA2 Infineon Technologies IPx120N06S4-02.pdf Description: MOSFET N-CH 60V 120A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 2.8mOhm @ 100A, 10V
Power Dissipation (Max): 188W (Tc)
Vgs(th) (Max) @ Id: 4V @ 140µA
Supplier Device Package: PG-TO220-3-1
Grade: Automotive
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 195 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 15750 pF @ 25 V
Qualification: AEC-Q101
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TLS805B1LDV50XUMA1 TLS805B1LDV50XUMA1 Infineon Technologies Infineon-TLS805B1LD%20V50-DS-v01_10-EN.pdf?fileId=5546d46258fc0bc1015969ed62f84247 Description: IC REG LINEAR 5V 50MA PG-TSON-10
Current - Supply (Max): 12 µA
Protection Features: Over Current, Over Temperature
Voltage Dropout (Max): 0.35V @ 50mA
PSRR: 55dB (100Hz)
Control Features: Enable
Voltage - Output (Min/Fixed): 5V
Supplier Device Package: PG-TSON-10
Number of Regulators: 1
Voltage - Input (Max): 42V
Current - Quiescent (Iq): 8 µA
Output Configuration: Positive
Operating Temperature: -40°C ~ 150°C (TJ)
Current - Output: 50mA
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: 10-TFDFN Exposed Pad
Packaging: Tape & Reel (TR)
Qualification: AEC-Q100
Grade: Automotive
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SAF-XC164TM-8F40FAA SAF-XC164TM-8F40FAA Infineon Technologies INFNS10464-1.pdf?t.download=true&u=5oefqw Description: IC MCU 16BIT 64KB FLASH 64TQFP
Number of I/O: 47
Part Status: Active
Supplier Device Package: PG-TQFP-64-8
Peripherals: PWM, WDT
Connectivity: SPI, UART/USART
Voltage - Supply (Vcc/Vdd): 2.35V ~ 2.7V
Data Converters: A/D 14x8/10b
Core Processor: C166SV2
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 85°C
RAM Size: 6K x 8
Program Memory Size: 64KB (64K x 8)
Speed: 40MHz
Mounting Type: Surface Mount
Package / Case: 64-LQFP
Packaging: Bulk
DigiKey Programmable: Not Verified
Core Size: 16-Bit
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SAF-XC164CM-4F20FAA SAF-XC164CM-4F20FAA Infineon Technologies INFNS10522-1.pdf?t.download=true&u=5oefqw Description: IC MCU 16BIT 32KB FLASH 64TQFP
Core Processor: C166SV2
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 85°C (TA)
RAM Size: 4K x 8
Program Memory Size: 32KB (32K x 8)
Speed: 20MHz
Mounting Type: Surface Mount
Package / Case: 64-LQFP
Packaging: Bulk
Number of I/O: 47
Part Status: Active
Supplier Device Package: PG-TQFP-64-8
Peripherals: PWM, WDT
Connectivity: CANbus, SPI, UART/USART
Voltage - Supply (Vcc/Vdd): 2.35V ~ 2.7V
Core Size: 16-Bit
Data Converters: A/D 14x8/10b
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SAF-XC164N-8F40FBB SAF-XC164N-8F40FBB Infineon Technologies INFNS10159-1.pdf?t.download=true&u=5oefqw Description: IC MCU 16BIT 64KB FLASH 100TQFP
Packaging: Bulk
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Speed: 40MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 6K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: C166SV2
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 2.35V ~ 2.7V
Connectivity: EBI/EMI, SPI, UART/USART
Peripherals: PWM, WDT
Supplier Device Package: PG-TQFP-100-5
Part Status: Active
Number of I/O: 79
DigiKey Programmable: Not Verified
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SAFXC164TM16F20FBA SAFXC164TM16F20FBA Infineon Technologies INFNS10464-1.pdf?t.download=true&u=5oefqw Description: LEGACY 16-BIT FLASH MCU
Packaging: Bulk
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Speed: 40MHz
Program Memory Size: 128KB (128K x 8)
RAM Size: 8K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: C166SV2
Data Converters: A/D 14x8/10b SAR
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 2.35V ~ 2.7V
Connectivity: ASC, SPI, SSC, UART/USART
Peripherals: PWM, WDT
Supplier Device Package: PG-LQFP-64-4
Part Status: Active
Number of I/O: 47
DigiKey Programmable: Not Verified
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SAF-XC164CM-16F40F-BA SAF-XC164CM-16F40F-BA Infineon Technologies INFNS10522-1.pdf?t.download=true&u=5oefqw Description: LEGACY 16-BIT FLASH MCU
DigiKey Programmable: Not Verified
Number of I/O: 47
Part Status: Active
Supplier Device Package: PG-LQFP-64-4
Peripherals: PWM, WDT
Connectivity: ASC, CANbus, SPI, SSC, UART/USART
Voltage - Supply (Vcc/Vdd): 4.5V ~ 5.5V
Core Size: 16-Bit
Data Converters: A/D 14x8/10b SAR
Core Processor: C166SV2
Program Memory Type: FLASH
Oscillator Type: External, Internal
Operating Temperature: -40°C ~ 85°C (TA)
RAM Size: 8K x 8
Program Memory Size: 128KB (128K x 8)
Speed: 40MHz
Mounting Type: Surface Mount
Package / Case: 64-LQFP
Packaging: Bulk
Produkt ist nicht verfügbar
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SAFC164CM4EFABFXUMA1 SAFC164CM4EFABFXUMA1 Infineon Technologies INFNS03570-1.pdf?t.download=true&u=5oefqw Description: LEGACY 16-BIT MCU
Number of I/O: 50
Part Status: Active
Supplier Device Package: P-TQFP-64-4
Peripherals: POR, PWM, WDT
DigiKey Programmable: Not Verified
Package / Case: 64-LQFP
Packaging: Bulk
Connectivity: CANbus, EBI/EMI, SPI, UART/USART
Voltage - Supply (Vcc/Vdd): 4.5V ~ 5.5V
Core Size: 16-Bit
Data Converters: A/D 8x10b
Core Processor: C166
Program Memory Type: OTP
Oscillator Type: External, Internal
Operating Temperature: -40°C ~ 85°C (TA)
RAM Size: 2K x 8
Program Memory Size: 32KB (32K x 8)
Speed: 20MHz
Mounting Type: Surface Mount
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SAF-XC164SM-8F40FAA Infineon Technologies Description: IC MCU 16BIT 64KB FLASH 64TQFP
Produkt ist nicht verfügbar
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XC164CM8F40FAAFXUMA1 XC164CM8F40FAAFXUMA1 Infineon Technologies xc164cm_ds_v1.4_2007_03.pdf?fileId=db3a304412b407950112b40c0f3c0a1b&ack=t Description: IC MCU 16BIT 64KB FLASH 64TQFP
Packaging: Tape & Reel (TR)
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Speed: 40MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 6K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: C166SV2
Data Converters: A/D 14x8/10b
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 2.35V ~ 2.7V
Connectivity: CANbus, SPI, UART/USART
Peripherals: PWM, WDT
Supplier Device Package: PG-TQFP-64-8
Number of I/O: 47
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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SAF-XC164S-8F40FBB Infineon Technologies Description: IC MCU 16BIT 64KB FLASH 100TQFP
Packaging: Bulk
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Speed: 40MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 6K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: C166SV2
Data Converters: A/D 14x8/10b
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 2.35V ~ 2.7V
Connectivity: EBI/EMI, SPI, UART/USART
Peripherals: PWM, WDT
Supplier Device Package: PG-TQFP-100-5
Part Status: Active
Number of I/O: 79
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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BTT60302ERAXUMA1 BTT60302ERAXUMA1 Infineon Technologies Infineon-BTT6030-2ERA-DS-v01_00-EN.pdf?fileId=5546d46269e1c019016a21fa44260d82 Description: IC PWR SWITCH N-CHAN 1:1 TDSO-14
Packaging: Tape & Reel (TR)
Package / Case: 14-SOIC (0.154", 3.90mm Width) Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 2
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 32mOhm
Input Type: Non-Inverting
Voltage - Load: 5V ~ 36V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 4A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-TDSO-14-31
Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, Over Voltage
Grade: Automotive
Part Status: Active
Qualification: AEC-Q100
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SIGC07T60NCX7SA1 Infineon Technologies Description: IGBT 3 CHIP 600V WAFER
Produkt ist nicht verfügbar
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BC858BE6327 BC858BE6327 Infineon Technologies INFNS16508-1.pdf?t.download=true&u=5oefqw Description: TRANS PNP 30V 0.1A SOT23
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 220 @ 2mA, 5V
Frequency - Transition: 250MHz
Supplier Device Package: PG-SOT23
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 330 mW
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BC858BWH6327 BC858BWH6327 Infineon Technologies INFNS16508-1.pdf?t.download=true&u=5oefqw Description: TRANS PNP 30V 0.1A SOT323-3
Part Status: Active
Supplier Device Package: PG-SOT323-3-1
Frequency - Transition: 250MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 220 @ 2mA, 5V
Current - Collector Cutoff (Max): 15nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Operating Temperature: 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Packaging: Bulk
Power - Max: 250 mW
Voltage - Collector Emitter Breakdown (Max): 30 V
Current - Collector (Ic) (Max): 100 mA
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SSP08N50C3 Infineon Technologies Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Produkt ist nicht verfügbar
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SPI08N50C3 SPI08N50C3 Infineon Technologies INFNS14195-1.pdf?t.download=true&u=5oefqw Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.6A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 4.6A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 350µA
Supplier Device Package: PG-TO262-3-1
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 560 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 750 pF @ 25 V
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SPI08N50C3IN Infineon Technologies INFNS14202-1.pdf?t.download=true&u=5oefqw Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.6A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 4.6A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 350µA
Supplier Device Package: PG-TO262-3-1
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 750 pF @ 25 V
Produkt ist nicht verfügbar
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SPI08N50C3XK SPI08N50C3XK Infineon Technologies Infineon-SPP_I_A08N50C3-DS-v02_91-en.pdf?fileId=db3a3043163797a6011637ea8fa3006d Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.6A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 4.6A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 350µA
Supplier Device Package: PG-TO262-3-1
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 750 pF @ 25 V
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CY8C24423A-12PVXET CY8C24423A-12PVXET Infineon Technologies Infineon-CY8C24223A_CY8C24423A_Automotive_Extended_Temperature_PSoC_Programmable_System-on-Chip_Datasheet-AdditionalTechnicalInformation-v13_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec674eb3ca9&utm_source=cypress&utm_medium=refe Description: IC MCU 8BIT 4KB FLASH 28SSOP
Peripherals: POR, PWM, WDT
Connectivity: I2C, SPI, UART/USART
Voltage - Supply (Vcc/Vdd): 2.4V ~ 5.25V
Core Size: 8-Bit
Data Converters: A/D 12x14b; D/A 2x9b
Core Processor: M8C
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 125°C (TA)
RAM Size: 256 x 8
Program Memory Size: 4KB (4K x 8)
Speed: 12MHz
Mounting Type: Surface Mount
Package / Case: 28-SSOP (0.209", 5.30mm Width)
Packaging: Bulk
DigiKey Programmable: Verified
Number of I/O: 24
Supplier Device Package: 28-SSOP
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SGB02N120CT SGB02N120CT Infineon Technologies Infineon-SGB02N120-DS-v02_03-en.pdf?fileId=db3a304412b407950112b42799e03c76 Description: IGBT, 2A, 1200V, N-CHANNEL
Packaging: Bulk
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3.6V @ 15V, 2A
Supplier Device Package: PG-TO263-3-2
IGBT Type: NPT
Td (on/off) @ 25°C: 23ns/260ns
Switching Energy: 220µJ
Test Condition: 800V, 2A, 91Ohm, 15V
Gate Charge: 11 nC
Part Status: Active
Current - Collector (Ic) (Max): 6.2 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 9.6 A
Power - Max: 62 W
Produkt ist nicht verfügbar
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FS35R12KE3GBOSA1 Infineon Technologies Infineon-FS35R12KE3G-DS-v03_00-en_de.pdf?fileId=db3a304412b407950112b4311aa45378 Description: IGBT MOD 1200V 55A 200W
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Full Bridge
Operating Temperature: -40°C ~ 125°C
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 35A
NTC Thermistor: Yes
Supplier Device Package: Module
Part Status: Discontinued at Digi-Key
Current - Collector (Ic) (Max): 55 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 200 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 2.5 nF @ 25 V
Produkt ist nicht verfügbar
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TLE4206-2GXUMA2 TLE4206-2GXUMA2 Infineon Technologies Infineon-TLE4206-2G-DS-v01_03-EN.pdf?fileId=5546d4625a888733015a8a3f58793f40 Description: BRUSH DC MOTOR CONTROLLER, 1A
Packaging: Bulk
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 800mA
Interface: Parallel
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge (2)
Voltage - Supply: 8V ~ 18V
Applications: Automotive
Technology: Bipolar
Voltage - Load: 8V ~ 18V
Supplier Device Package: PG-DSO-14-22
Motor Type - AC, DC: Servo DC
Part Status: Active
Produkt ist nicht verfügbar
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TLE4206-4GXUMA2 TLE4206-4GXUMA2 Infineon Technologies Infineon-TLE4206-2G-DS-v01_03-EN.pdf?fileId=5546d4625a888733015a8a3f58793f40 Description: BRUSH DC MOTOR CONTROLLER, 1A
auf Bestellung 2189 Stücke:
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257+2.31 EUR
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TLE4206G TLE4206G Infineon Technologies Infineon-TLE4206-2G-DS-v01_03-EN.pdf?fileId=5546d4625a888733015a8a3f58793f40 Description: BRUSH DC MOTOR CONTROLLER, 1A
Produkt ist nicht verfügbar
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TLE62512G TLE62512G Infineon Technologies Infineon-TLE6251-2G-DS-v01_22-EN.pdf?fileId=5546d4625996c0c30159a766fb9977b8 Description: IC TRANSCEIVER HALF 1/1 DSO-14
Packaging: Bulk
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Type: Transceiver
Voltage - Supply: 4.75V ~ 5.25V
Number of Drivers/Receivers: 1/1
Protocol: CANbus
Supplier Device Package: PG-DSO-14-13
Receiver Hysteresis: 100 mV
Duplex: Half
Part Status: Active
Produkt ist nicht verfügbar
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BCR169E6327 BCR169E6327 Infineon Technologies INFNS11715-1.pdf?t.download=true&u=5oefqw Description: TRANS PREBIAS PNP 50V SOT23-3
Qualification: AEC-Q101
Grade: Automotive
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Active
Supplier Device Package: PG-SOT23-3-3
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 5mA, 5V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Transistor Type: PNP - Pre-Biased
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Bulk
Resistor - Base (R1): 4.7 kOhms
Frequency - Transition: 200 MHz
Power - Max: 200 mW
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7397+0.076 EUR
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BCR169WH6327 BCR169WH6327 Infineon Technologies INFNS17187-1.pdf?t.download=true&u=5oefqw Description: BIPOLAR DIGITAL TRANSISTOR
Resistor - Base (R1): 4.7 kOhms
Frequency - Transition: 200 MHz
Power - Max: 250 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Active
Supplier Device Package: PG-SOT323-3-1
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 5mA, 5V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Transistor Type: PNP - Pre-Biased
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Packaging: Bulk
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BCR 162 E6327 Infineon Technologies INFNS11631-1.pdf?t.download=true&u=5oefqw Description: BIPOLAR DIGITAL TRANSISTOR
Resistor - Emitter Base (R2): 4.7 kOhms
Resistor - Base (R1): 4.7 kOhms
Frequency - Transition: 200 MHz
Power - Max: 200 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Active
Supplier Device Package: PG-SOT23-3-3
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 5mA, 5V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Transistor Type: PNP - Pre-Biased
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Bulk
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IRFC3205B
Hersteller: Infineon Technologies
Description: MOSFET 55V 110A DIE
Drain to Source Voltage (Vdss): 55 V
Part Status: Obsolete
Supplier Device Package: Die
Rds On (Max) @ Id, Vgs: 8mOhm @ 110A, 10V
Current - Continuous Drain (Id) @ 25°C: 110A
Technology: MOSFET (Metal Oxide)
Mounting Type: Surface Mount
Package / Case: Die
Packaging: Bulk
Produkt ist nicht verfügbar
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IMW120R090M1HXKSA1 Infineon-IMW120R090M1H-DS-v01_01-EN.pdf?fileId=5546d46269e1c019016a92fd64376684
IMW120R090M1HXKSA1
Hersteller: Infineon Technologies
Description: SICFET N-CH 1.2KV 26A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
Rds On (Max) @ Id, Vgs: 117mOhm @ 8.5A, 18V
Power Dissipation (Max): 115W (Tc)
Vgs(th) (Max) @ Id: 5.7V @ 3.7mA
Supplier Device Package: PG-TO247-3-41
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 707 pF @ 800 V
auf Bestellung 480 Stücke:
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2+16.67 EUR
30+9.72 EUR
120+8.2 EUR
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IPP80N06S2-07AKSA4 INFNS14920-1.pdf?t.download=true&u=5oefqw
IPP80N06S2-07AKSA4
Hersteller: Infineon Technologies
Description: N-CHANNEL POWER MOSFET
Input Capacitance (Ciss) (Max) @ Vds: 3400 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Drain to Source Voltage (Vdss): 55 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PG-TO220-3-1
Vgs(th) (Max) @ Id: 4V @ 180µA
Power Dissipation (Max): 250W (Tc)
Rds On (Max) @ Id, Vgs: 6.6mOhm @ 68A, 10V
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Bulk
Produkt ist nicht verfügbar
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SPP80N06S-08 spp_b_i80n06s-08green.pdf?t.download=true&u=5oefqw
SPP80N06S-08
Hersteller: Infineon Technologies
Description: N-CHANNEL POWER MOSFET
Qualification: AEC-Q101
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PG-TO220-3-1
Vgs(th) (Max) @ Id: 4V @ 240µA
Power Dissipation (Max): 300W (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 80A, 10V
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Bulk
Input Capacitance (Ciss) (Max) @ Vds: 3660 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 187 nC @ 10 V
Drain to Source Voltage (Vdss): 55 V
Vgs (Max): ±20V
auf Bestellung 2000 Stücke:
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AnzahlPrivatkunde
239+2.4 EUR
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SPP80N06S209 SPBP80N06S2-09.pdf?t.download=true&u=5oefqw
SPP80N06S209
Hersteller: Infineon Technologies
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 9.1mOhm @ 50A, 10V
Power Dissipation (Max): 190W (Tc)
Vgs(th) (Max) @ Id: 4V @ 125µA
Supplier Device Package: PG-TO220-3-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3140 pF @ 25 V
auf Bestellung 784 Stücke:
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AnzahlPrivatkunde
273+2.02 EUR
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IPP80N06S2L-06 INFNS09542-1.pdf?t.download=true&u=5oefqw
IPP80N06S2L-06
Hersteller: Infineon Technologies
Description: N-CHANNEL POWER MOSFET
Input Capacitance (Ciss) (Max) @ Vds: 3800 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V
Drain to Source Voltage (Vdss): 55 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PG-TO220-3-1
Vgs(th) (Max) @ Id: 2V @ 180µA
Power Dissipation (Max): 250W (Tc)
Rds On (Max) @ Id, Vgs: 6.3mOhm @ 69A, 10V
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Bulk
Produkt ist nicht verfügbar
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SPB80N06SL2-7 spp_b_i80n06s2l-11.pdf?t.download=true&u=5oefqw
SPB80N06SL2-7
Hersteller: Infineon Technologies
Description: N-CHANNEL AUTOMOTIVE MOSFET
Packaging: Bulk
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 60A, 10V
Power Dissipation (Max): 210W (Tc)
Vgs(th) (Max) @ Id: 2V @ 150µA
Supplier Device Package: PG-TO263-3-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3160 pF @ 25 V
auf Bestellung 600 Stücke:
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AnzahlPrivatkunde
240+2.23 EUR
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IPP80N06S2L-05 INFNS09525-1.pdf?t.download=true&u=5oefqw
IPP80N06S2L-05
Hersteller: Infineon Technologies
Description: N-CHANNEL POWER MOSFET
Input Capacitance (Ciss) (Max) @ Vds: 5700 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 230 nC @ 10 V
Drain to Source Voltage (Vdss): 55 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PG-TO220-3-1
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 300W (Tc)
Rds On (Max) @ Id, Vgs: 4.8mOhm @ 80A, 10V
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Bulk
Produkt ist nicht verfügbar
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SPB80N06SL-07 spp_b_i80n06s2l-11.pdf?t.download=true&u=5oefqw
Hersteller: Infineon Technologies
Description: N-CHANNEL AUTOMOTIVE MOSFET
Part Status: Active
Packaging: Bulk
Produkt ist nicht verfügbar
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AUXDKG4PC40S-E
Hersteller: Infineon Technologies
Description: IC DISCRETE
Part Status: Obsolete
Packaging: Tube
Produkt ist nicht verfügbar
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IRG4BC20U IRG4BC20U.pdf
IRG4BC20U
Hersteller: Infineon Technologies
Description: IGBT 600V 13A TO-220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 6.5A
Supplier Device Package: TO-220AB
Td (on/off) @ 25°C: 21ns/86ns
Switching Energy: 100µJ (on), 120µJ (off)
Test Condition: 480V, 6.5A, 50Ohm, 15V
Gate Charge: 27 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 13 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 52 A
Power - Max: 60 W
Produkt ist nicht verfügbar
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IRG4BC20UD Infineon-IRG4BC20UD-DataSheet-v01_00-EN.pdf?fileId=5546d462533600a40153563f76dd2265
IRG4BC20UD
Hersteller: Infineon Technologies
Description: IGBT 600V 13A TO-220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 37 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 6.5A
Supplier Device Package: TO-220AB
Td (on/off) @ 25°C: 39ns/93ns
Switching Energy: 160µJ (on), 130µJ (off)
Test Condition: 480V, 6.5A, 50Ohm, 15V
Gate Charge: 27 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 13 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 52 A
Power - Max: 60 W
Produkt ist nicht verfügbar
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IRG4BC20W IRG4BC20W.pdf
IRG4BC20W
Hersteller: Infineon Technologies
Description: IGBT 600V 13A TO-220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 6.5A
Supplier Device Package: TO-220AB
Td (on/off) @ 25°C: 22ns/110ns
Switching Energy: 60µJ (on), 80µJ (off)
Test Condition: 480V, 6.5A, 50Ohm, 15V
Gate Charge: 26 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 13 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 52 A
Power - Max: 60 W
Produkt ist nicht verfügbar
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IRG4BC20F Infineon-IRG4BC20F-DataSheet-v01_00-EN.pdf?fileId=5546d462533600a40153563f29032251
IRG4BC20F
Hersteller: Infineon Technologies
Description: IGBT 600V 16A TO-220AB
Power - Max: 60 W
Current - Collector Pulsed (Icm): 64 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 16 A
Part Status: Obsolete
Gate Charge: 27 nC
Test Condition: 480V, 9A, 50Ohm, 15V
Switching Energy: 70µJ (on), 600µJ (off)
Td (on/off) @ 25°C: 24ns/190ns
Supplier Device Package: TO-220AB
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 9A
Input Type: Standard
Package / Case: TO-220-3
Packaging: Tube
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Produkt ist nicht verfügbar
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PX3143HDMSM1400XTMA1
Hersteller: Infineon Technologies
Description: IC CONTROLLER
Produkt ist nicht verfügbar
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BC807-25WE6327 INFNS11647-1.pdf?t.download=true&u=5oefqw
BC807-25WE6327
Hersteller: Infineon Technologies
Description: TRANS PNP 45V 0.5A PG-SOT23-3-11
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 100mA, 1V
Frequency - Transition: 200MHz
Supplier Device Package: PG-SOT23-3-11
Part Status: Active
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 250 mW
auf Bestellung 360000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
8955+0.055 EUR
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BC807-25E6327 INFNS11647-1.pdf?t.download=true&u=5oefqw
BC807-25E6327
Hersteller: Infineon Technologies
Description: TRANS PNP 45V 0.5A PG-SOT23-3-11
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 100mA, 1V
Frequency - Transition: 200MHz
Supplier Device Package: PG-SOT23-3-11
Part Status: Active
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 330 mW
auf Bestellung 1643108 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
7059+0.074 EUR
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BC80725E6327 INFNS11647-1.pdf?t.download=true&u=5oefqw
BC80725E6327
Hersteller: Infineon Technologies
Description: TRANS PNP 45V 0.5A PG-SOT23-3-11
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 100mA, 1V
Frequency - Transition: 200MHz
Supplier Device Package: PG-SOT23-3-11
Part Status: Active
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 330 mW
auf Bestellung 843000 Stücke:
Lieferzeit 10-14 Tag (e)
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BC807-25E6433 INFNS11647-1.pdf?t.download=true&u=5oefqw
BC807-25E6433
Hersteller: Infineon Technologies
Description: TRANS PNP 45V 0.5A PG-SOT23-3-11
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 100mA, 1V
Frequency - Transition: 200MHz
Supplier Device Package: PG-SOT23-3-11
Part Status: Active
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 330 mW
auf Bestellung 452941 Stücke:
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7059+0.074 EUR
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SPPO4N80C3 Infineon-SPP04N80C3-DS-v02_91-en.pdf?fileId=db3a30432313ff5e0123a8f71e205c68
SPPO4N80C3
Hersteller: Infineon Technologies
Description: N-CHANNEL POWER MOSFET
Input Capacitance (Ciss) (Max) @ Vds: 570 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Drain to Source Voltage (Vdss): 800 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PG-TO220-3
Vgs(th) (Max) @ Id: 3.9V @ 240µA
Power Dissipation (Max): 63W (Tc)
Rds On (Max) @ Id, Vgs: 1.3Ohm @ 2.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Bulk
Produkt ist nicht verfügbar
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EVAL1EDS20I12SVTOBO2
EVAL1EDS20I12SVTOBO2
Hersteller: Infineon Technologies
Description: EVAL BOARD FOR 1EDS20I12SV
Packaging: Bulk
Function: Gate Driver
Type: Power Management
Contents: Board(s)
Utilized IC / Part: 1EDS20I12SV
Supplied Contents: Board(s)
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DDB6U180N16RRB11BPSA1 Infineon-DDB6U180N16RR_B11-DS-v03_00-EN.pdf?fileId=5546d462518ffd8501524095699c70bc
DDB6U180N16RRB11BPSA1
Hersteller: Infineon Technologies
Description: IGBT MOD 1200V 140A 515W
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: 3 Independent
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 100A
NTC Thermistor: No
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Part Status: Discontinued at Digi-Key
Current - Collector (Ic) (Max): 140 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 515 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 6.3 nF @ 25 V
Produkt ist nicht verfügbar
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FS100R12PT4BOSA1 Infineon-FS100R12PT4-DS-v02_02-en_de.pdf?fileId=db3a3043243b5f170124c4106aac11cd
FS100R12PT4BOSA1
Hersteller: Infineon Technologies
Description: IGBT MOD 1200V 135A 500W
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 100A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 135 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 500 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 6.3 nF @ 25 V
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1+354.18 EUR
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IFS100B12N3E4B31BOSA1 Infineon-IFS100B12N3E4_B31-DS-v02_00-en_de.pdf?fileId=db3a3043293a15c4012945dfb6fb53c6
IFS100B12N3E4B31BOSA1
Hersteller: Infineon Technologies
Description: IGBT MOD 1200V 200A 515W MOD
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Full Bridge
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 100A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 200 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 515 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 6.3 nF @ 25 V
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IFS100B12N3E4_B39 IFS100B12N3E4_B39_Rev2_2013-03-06.pdf
Hersteller: Infineon Technologies
Description: IGBT MOD 1200V 100A 515W
Input Capacitance (Cies) @ Vce: 6.3 nF @ 25 V
Current - Collector Cutoff (Max): 1 mA
Power - Max: 515 W
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 100 A
IGBT Type: Trench Field Stop
Supplier Device Package: Module
NTC Thermistor: Yes
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 100A
Operating Temperature: 175°C (TJ)
Configuration: Three Phase Inverter
Input: Standard
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Bulk
Produkt ist nicht verfügbar
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IPD50P04P413ATMA2 Infineon-IPD50P04P4-13-DataSheet-v01_03-EN.pdf?fileId=db3a30432f69f146012f781f908b2da3
IPD50P04P413ATMA2
Hersteller: Infineon Technologies
Description: MOSFET P-CH 40V 50A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 12.6mOhm @ 50A, 10V
Power Dissipation (Max): 58W (Tc)
Vgs(th) (Max) @ Id: 4V @ 85µA
Supplier Device Package: PG-TO252-3-313
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3670 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 17500 Stücke:
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2500+0.87 EUR
5000+0.81 EUR
7500+0.77 EUR
12500+0.74 EUR
17500+0.73 EUR
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IPD50P04P413ATMA2 Infineon-IPD50P04P4-13-DataSheet-v01_03-EN.pdf?fileId=db3a30432f69f146012f781f908b2da3
IPD50P04P413ATMA2
Hersteller: Infineon Technologies
Description: MOSFET P-CH 40V 50A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 12.6mOhm @ 50A, 10V
Power Dissipation (Max): 58W (Tc)
Vgs(th) (Max) @ Id: 4V @ 85µA
Supplier Device Package: PG-TO252-3-313
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3670 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 18234 Stücke:
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AnzahlPrivatkunde
7+3.2 EUR
11+2.02 EUR
100+1.34 EUR
500+1.06 EUR
1000+0.96 EUR
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IMBF170R650M1XTMA1 Infineon-IMBF170R650M1-DataSheet-v02_00-EN.pdf?fileId=5546d462712ef9b70171820c75bb1ad6
IMBF170R650M1XTMA1
Hersteller: Infineon Technologies
Description: SICFET N-CH 1700V 7.4A TO263-7
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.4A (Tc)
Rds On (Max) @ Id, Vgs: 650mOhm @ 1.5A, 15V
Power Dissipation (Max): 88W (Tc)
Vgs(th) (Max) @ Id: 5.7V @ 1.7mA
Supplier Device Package: PG-TO263-7-13
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 12V, 15V
Vgs (Max): +20V, -10V
Drain to Source Voltage (Vdss): 1700 V
Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 12 V
Input Capacitance (Ciss) (Max) @ Vds: 422 pF @ 1000 V
auf Bestellung 1000 Stücke:
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1000+4.2 EUR
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IMBF170R650M1XTMA1 Infineon-IMBF170R650M1-DataSheet-v02_00-EN.pdf?fileId=5546d462712ef9b70171820c75bb1ad6
IMBF170R650M1XTMA1
Hersteller: Infineon Technologies
Description: SICFET N-CH 1700V 7.4A TO263-7
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.4A (Tc)
Rds On (Max) @ Id, Vgs: 650mOhm @ 1.5A, 15V
Power Dissipation (Max): 88W (Tc)
Vgs(th) (Max) @ Id: 5.7V @ 1.7mA
Supplier Device Package: PG-TO263-7-13
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 12V, 15V
Vgs (Max): +20V, -10V
Drain to Source Voltage (Vdss): 1700 V
Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 12 V
Input Capacitance (Ciss) (Max) @ Vds: 422 pF @ 1000 V
auf Bestellung 1262 Stücke:
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2+11.22 EUR
10+7.51 EUR
100+5.4 EUR
500+4.93 EUR
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IPP120N06S403AKSA1 Infineon-I120N06S4_03-DS-v01_00-en.pdf?fileId=db3a30431ff98815012038c634110ccc
IPP120N06S403AKSA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 60V 120A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 3.2mOhm @ 100A, 10V
Power Dissipation (Max): 167W (Tc)
Vgs(th) (Max) @ Id: 4V @ 120µA
Supplier Device Package: PG-TO220-3-1
Grade: Automotive
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 160 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13150 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 22000 Stücke:
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249+2.14 EUR
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IPP120N06S402AKSA1 IPx120N06S4-02.pdf
IPP120N06S402AKSA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 60V 120A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 2.8mOhm @ 100A, 10V
Power Dissipation (Max): 188W (Tc)
Vgs(th) (Max) @ Id: 4V @ 140µA
Supplier Device Package: PG-TO220-3-1
Grade: Automotive
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 195 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 15750 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 22700 Stücke:
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209+2.55 EUR
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IPP120N06S402AKSA2 IPx120N06S4-02.pdf
IPP120N06S402AKSA2
Hersteller: Infineon Technologies
Description: MOSFET N-CH 60V 120A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 2.8mOhm @ 100A, 10V
Power Dissipation (Max): 188W (Tc)
Vgs(th) (Max) @ Id: 4V @ 140µA
Supplier Device Package: PG-TO220-3-1
Grade: Automotive
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 195 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 15750 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 12852 Stücke:
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209+2.55 EUR
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TLS805B1LDV50XUMA1 Infineon-TLS805B1LD%20V50-DS-v01_10-EN.pdf?fileId=5546d46258fc0bc1015969ed62f84247
TLS805B1LDV50XUMA1
Hersteller: Infineon Technologies
Description: IC REG LINEAR 5V 50MA PG-TSON-10
Current - Supply (Max): 12 µA
Protection Features: Over Current, Over Temperature
Voltage Dropout (Max): 0.35V @ 50mA
PSRR: 55dB (100Hz)
Control Features: Enable
Voltage - Output (Min/Fixed): 5V
Supplier Device Package: PG-TSON-10
Number of Regulators: 1
Voltage - Input (Max): 42V
Current - Quiescent (Iq): 8 µA
Output Configuration: Positive
Operating Temperature: -40°C ~ 150°C (TJ)
Current - Output: 50mA
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: 10-TFDFN Exposed Pad
Packaging: Tape & Reel (TR)
Qualification: AEC-Q100
Grade: Automotive
auf Bestellung 10000 Stücke:
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AnzahlPrivatkunde
5000+1.12 EUR
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SAF-XC164TM-8F40FAA INFNS10464-1.pdf?t.download=true&u=5oefqw
SAF-XC164TM-8F40FAA
Hersteller: Infineon Technologies
Description: IC MCU 16BIT 64KB FLASH 64TQFP
Number of I/O: 47
Part Status: Active
Supplier Device Package: PG-TQFP-64-8
Peripherals: PWM, WDT
Connectivity: SPI, UART/USART
Voltage - Supply (Vcc/Vdd): 2.35V ~ 2.7V
Data Converters: A/D 14x8/10b
Core Processor: C166SV2
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 85°C
RAM Size: 6K x 8
Program Memory Size: 64KB (64K x 8)
Speed: 40MHz
Mounting Type: Surface Mount
Package / Case: 64-LQFP
Packaging: Bulk
DigiKey Programmable: Not Verified
Core Size: 16-Bit
auf Bestellung 1018 Stücke:
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61+9.98 EUR
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SAF-XC164CM-4F20FAA INFNS10522-1.pdf?t.download=true&u=5oefqw
SAF-XC164CM-4F20FAA
Hersteller: Infineon Technologies
Description: IC MCU 16BIT 32KB FLASH 64TQFP
Core Processor: C166SV2
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 85°C (TA)
RAM Size: 4K x 8
Program Memory Size: 32KB (32K x 8)
Speed: 20MHz
Mounting Type: Surface Mount
Package / Case: 64-LQFP
Packaging: Bulk
Number of I/O: 47
Part Status: Active
Supplier Device Package: PG-TQFP-64-8
Peripherals: PWM, WDT
Connectivity: CANbus, SPI, UART/USART
Voltage - Supply (Vcc/Vdd): 2.35V ~ 2.7V
Core Size: 16-Bit
Data Converters: A/D 14x8/10b
Produkt ist nicht verfügbar
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SAF-XC164N-8F40FBB INFNS10159-1.pdf?t.download=true&u=5oefqw
SAF-XC164N-8F40FBB
Hersteller: Infineon Technologies
Description: IC MCU 16BIT 64KB FLASH 100TQFP
Packaging: Bulk
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Speed: 40MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 6K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: C166SV2
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 2.35V ~ 2.7V
Connectivity: EBI/EMI, SPI, UART/USART
Peripherals: PWM, WDT
Supplier Device Package: PG-TQFP-100-5
Part Status: Active
Number of I/O: 79
DigiKey Programmable: Not Verified
auf Bestellung 294 Stücke:
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37+14.49 EUR
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SAFXC164TM16F20FBA INFNS10464-1.pdf?t.download=true&u=5oefqw
SAFXC164TM16F20FBA
Hersteller: Infineon Technologies
Description: LEGACY 16-BIT FLASH MCU
Packaging: Bulk
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Speed: 40MHz
Program Memory Size: 128KB (128K x 8)
RAM Size: 8K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: C166SV2
Data Converters: A/D 14x8/10b SAR
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 2.35V ~ 2.7V
Connectivity: ASC, SPI, SSC, UART/USART
Peripherals: PWM, WDT
Supplier Device Package: PG-LQFP-64-4
Part Status: Active
Number of I/O: 47
DigiKey Programmable: Not Verified
auf Bestellung 772 Stücke:
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AnzahlPrivatkunde
37+14.47 EUR
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SAF-XC164CM-16F40F-BA INFNS10522-1.pdf?t.download=true&u=5oefqw
SAF-XC164CM-16F40F-BA
Hersteller: Infineon Technologies
Description: LEGACY 16-BIT FLASH MCU
DigiKey Programmable: Not Verified
Number of I/O: 47
Part Status: Active
Supplier Device Package: PG-LQFP-64-4
Peripherals: PWM, WDT
Connectivity: ASC, CANbus, SPI, SSC, UART/USART
Voltage - Supply (Vcc/Vdd): 4.5V ~ 5.5V
Core Size: 16-Bit
Data Converters: A/D 14x8/10b SAR
Core Processor: C166SV2
Program Memory Type: FLASH
Oscillator Type: External, Internal
Operating Temperature: -40°C ~ 85°C (TA)
RAM Size: 8K x 8
Program Memory Size: 128KB (128K x 8)
Speed: 40MHz
Mounting Type: Surface Mount
Package / Case: 64-LQFP
Packaging: Bulk
Produkt ist nicht verfügbar
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SAFC164CM4EFABFXUMA1 INFNS03570-1.pdf?t.download=true&u=5oefqw
SAFC164CM4EFABFXUMA1
Hersteller: Infineon Technologies
Description: LEGACY 16-BIT MCU
Number of I/O: 50
Part Status: Active
Supplier Device Package: P-TQFP-64-4
Peripherals: POR, PWM, WDT
DigiKey Programmable: Not Verified
Package / Case: 64-LQFP
Packaging: Bulk
Connectivity: CANbus, EBI/EMI, SPI, UART/USART
Voltage - Supply (Vcc/Vdd): 4.5V ~ 5.5V
Core Size: 16-Bit
Data Converters: A/D 8x10b
Core Processor: C166
Program Memory Type: OTP
Oscillator Type: External, Internal
Operating Temperature: -40°C ~ 85°C (TA)
RAM Size: 2K x 8
Program Memory Size: 32KB (32K x 8)
Speed: 20MHz
Mounting Type: Surface Mount
auf Bestellung 1314 Stücke:
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AnzahlPrivatkunde
23+26.86 EUR
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SAF-XC164SM-8F40FAA
Hersteller: Infineon Technologies
Description: IC MCU 16BIT 64KB FLASH 64TQFP
Produkt ist nicht verfügbar
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XC164CM8F40FAAFXUMA1 xc164cm_ds_v1.4_2007_03.pdf?fileId=db3a304412b407950112b40c0f3c0a1b&ack=t
XC164CM8F40FAAFXUMA1
Hersteller: Infineon Technologies
Description: IC MCU 16BIT 64KB FLASH 64TQFP
Packaging: Tape & Reel (TR)
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Speed: 40MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 6K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: C166SV2
Data Converters: A/D 14x8/10b
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 2.35V ~ 2.7V
Connectivity: CANbus, SPI, UART/USART
Peripherals: PWM, WDT
Supplier Device Package: PG-TQFP-64-8
Number of I/O: 47
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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SAF-XC164S-8F40FBB
Hersteller: Infineon Technologies
Description: IC MCU 16BIT 64KB FLASH 100TQFP
Packaging: Bulk
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Speed: 40MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 6K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: C166SV2
Data Converters: A/D 14x8/10b
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 2.35V ~ 2.7V
Connectivity: EBI/EMI, SPI, UART/USART
Peripherals: PWM, WDT
Supplier Device Package: PG-TQFP-100-5
Part Status: Active
Number of I/O: 79
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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BTT60302ERAXUMA1 Infineon-BTT6030-2ERA-DS-v01_00-EN.pdf?fileId=5546d46269e1c019016a21fa44260d82
BTT60302ERAXUMA1
Hersteller: Infineon Technologies
Description: IC PWR SWITCH N-CHAN 1:1 TDSO-14
Packaging: Tape & Reel (TR)
Package / Case: 14-SOIC (0.154", 3.90mm Width) Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 2
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 32mOhm
Input Type: Non-Inverting
Voltage - Load: 5V ~ 36V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 4A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-TDSO-14-31
Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, Over Voltage
Grade: Automotive
Part Status: Active
Qualification: AEC-Q100
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3000+4.22 EUR
Mindestbestellmenge: 3000 Stücke
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SIGC07T60NCX7SA1
Hersteller: Infineon Technologies
Description: IGBT 3 CHIP 600V WAFER
Produkt ist nicht verfügbar
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BC858BE6327 INFNS16508-1.pdf?t.download=true&u=5oefqw
BC858BE6327
Hersteller: Infineon Technologies
Description: TRANS PNP 30V 0.1A SOT23
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 220 @ 2mA, 5V
Frequency - Transition: 250MHz
Supplier Device Package: PG-SOT23
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 330 mW
auf Bestellung 121603 Stücke:
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AnzahlPrivatkunde
7818+0.076 EUR
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BC858BWH6327 INFNS16508-1.pdf?t.download=true&u=5oefqw
BC858BWH6327
Hersteller: Infineon Technologies
Description: TRANS PNP 30V 0.1A SOT323-3
Part Status: Active
Supplier Device Package: PG-SOT323-3-1
Frequency - Transition: 250MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 220 @ 2mA, 5V
Current - Collector Cutoff (Max): 15nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Operating Temperature: 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Packaging: Bulk
Power - Max: 250 mW
Voltage - Collector Emitter Breakdown (Max): 30 V
Current - Collector (Ic) (Max): 100 mA
Produkt ist nicht verfügbar
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SSP08N50C3
Hersteller: Infineon Technologies
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Produkt ist nicht verfügbar
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SPI08N50C3 INFNS14195-1.pdf?t.download=true&u=5oefqw
SPI08N50C3
Hersteller: Infineon Technologies
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.6A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 4.6A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 350µA
Supplier Device Package: PG-TO262-3-1
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 560 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 750 pF @ 25 V
Produkt ist nicht verfügbar
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SPI08N50C3IN INFNS14202-1.pdf?t.download=true&u=5oefqw
Hersteller: Infineon Technologies
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.6A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 4.6A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 350µA
Supplier Device Package: PG-TO262-3-1
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 750 pF @ 25 V
Produkt ist nicht verfügbar
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SPI08N50C3XK Infineon-SPP_I_A08N50C3-DS-v02_91-en.pdf?fileId=db3a3043163797a6011637ea8fa3006d
SPI08N50C3XK
Hersteller: Infineon Technologies
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.6A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 4.6A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 350µA
Supplier Device Package: PG-TO262-3-1
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 750 pF @ 25 V
Produkt ist nicht verfügbar
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CY8C24423A-12PVXET Infineon-CY8C24223A_CY8C24423A_Automotive_Extended_Temperature_PSoC_Programmable_System-on-Chip_Datasheet-AdditionalTechnicalInformation-v13_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec674eb3ca9&utm_source=cypress&utm_medium=refe
CY8C24423A-12PVXET
Hersteller: Infineon Technologies
Description: IC MCU 8BIT 4KB FLASH 28SSOP
Peripherals: POR, PWM, WDT
Connectivity: I2C, SPI, UART/USART
Voltage - Supply (Vcc/Vdd): 2.4V ~ 5.25V
Core Size: 8-Bit
Data Converters: A/D 12x14b; D/A 2x9b
Core Processor: M8C
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 125°C (TA)
RAM Size: 256 x 8
Program Memory Size: 4KB (4K x 8)
Speed: 12MHz
Mounting Type: Surface Mount
Package / Case: 28-SSOP (0.209", 5.30mm Width)
Packaging: Bulk
DigiKey Programmable: Verified
Number of I/O: 24
Supplier Device Package: 28-SSOP
auf Bestellung 1138 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
77+7.77 EUR
Mindestbestellmenge: 77 Stücke
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SGB02N120CT Infineon-SGB02N120-DS-v02_03-en.pdf?fileId=db3a304412b407950112b42799e03c76
SGB02N120CT
Hersteller: Infineon Technologies
Description: IGBT, 2A, 1200V, N-CHANNEL
Packaging: Bulk
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3.6V @ 15V, 2A
Supplier Device Package: PG-TO263-3-2
IGBT Type: NPT
Td (on/off) @ 25°C: 23ns/260ns
Switching Energy: 220µJ
Test Condition: 800V, 2A, 91Ohm, 15V
Gate Charge: 11 nC
Part Status: Active
Current - Collector (Ic) (Max): 6.2 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 9.6 A
Power - Max: 62 W
Produkt ist nicht verfügbar
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FS35R12KE3GBOSA1 Infineon-FS35R12KE3G-DS-v03_00-en_de.pdf?fileId=db3a304412b407950112b4311aa45378
Hersteller: Infineon Technologies
Description: IGBT MOD 1200V 55A 200W
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Full Bridge
Operating Temperature: -40°C ~ 125°C
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 35A
NTC Thermistor: Yes
Supplier Device Package: Module
Part Status: Discontinued at Digi-Key
Current - Collector (Ic) (Max): 55 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 200 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 2.5 nF @ 25 V
Produkt ist nicht verfügbar
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TLE4206-2GXUMA2 Infineon-TLE4206-2G-DS-v01_03-EN.pdf?fileId=5546d4625a888733015a8a3f58793f40
TLE4206-2GXUMA2
Hersteller: Infineon Technologies
Description: BRUSH DC MOTOR CONTROLLER, 1A
Packaging: Bulk
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 800mA
Interface: Parallel
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge (2)
Voltage - Supply: 8V ~ 18V
Applications: Automotive
Technology: Bipolar
Voltage - Load: 8V ~ 18V
Supplier Device Package: PG-DSO-14-22
Motor Type - AC, DC: Servo DC
Part Status: Active
Produkt ist nicht verfügbar
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TLE4206-4GXUMA2 Infineon-TLE4206-2G-DS-v01_03-EN.pdf?fileId=5546d4625a888733015a8a3f58793f40
TLE4206-4GXUMA2
Hersteller: Infineon Technologies
Description: BRUSH DC MOTOR CONTROLLER, 1A
auf Bestellung 2189 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
257+2.31 EUR
Mindestbestellmenge: 257 Stücke
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TLE4206G Infineon-TLE4206-2G-DS-v01_03-EN.pdf?fileId=5546d4625a888733015a8a3f58793f40
TLE4206G
Hersteller: Infineon Technologies
Description: BRUSH DC MOTOR CONTROLLER, 1A
Produkt ist nicht verfügbar
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TLE62512G Infineon-TLE6251-2G-DS-v01_22-EN.pdf?fileId=5546d4625996c0c30159a766fb9977b8
TLE62512G
Hersteller: Infineon Technologies
Description: IC TRANSCEIVER HALF 1/1 DSO-14
Packaging: Bulk
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Type: Transceiver
Voltage - Supply: 4.75V ~ 5.25V
Number of Drivers/Receivers: 1/1
Protocol: CANbus
Supplier Device Package: PG-DSO-14-13
Receiver Hysteresis: 100 mV
Duplex: Half
Part Status: Active
Produkt ist nicht verfügbar
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BCR169E6327 INFNS11715-1.pdf?t.download=true&u=5oefqw
BCR169E6327
Hersteller: Infineon Technologies
Description: TRANS PREBIAS PNP 50V SOT23-3
Qualification: AEC-Q101
Grade: Automotive
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Active
Supplier Device Package: PG-SOT23-3-3
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 5mA, 5V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Transistor Type: PNP - Pre-Biased
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Bulk
Resistor - Base (R1): 4.7 kOhms
Frequency - Transition: 200 MHz
Power - Max: 200 mW
auf Bestellung 186000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
7397+0.076 EUR
Mindestbestellmenge: 7397 Stücke
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BCR169WH6327 INFNS17187-1.pdf?t.download=true&u=5oefqw
BCR169WH6327
Hersteller: Infineon Technologies
Description: BIPOLAR DIGITAL TRANSISTOR
Resistor - Base (R1): 4.7 kOhms
Frequency - Transition: 200 MHz
Power - Max: 250 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Active
Supplier Device Package: PG-SOT323-3-1
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 5mA, 5V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Transistor Type: PNP - Pre-Biased
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Packaging: Bulk
auf Bestellung 81000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
7123+0.079 EUR
Mindestbestellmenge: 7123 Stücke
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BCR 162 E6327 INFNS11631-1.pdf?t.download=true&u=5oefqw
Hersteller: Infineon Technologies
Description: BIPOLAR DIGITAL TRANSISTOR
Resistor - Emitter Base (R2): 4.7 kOhms
Resistor - Base (R1): 4.7 kOhms
Frequency - Transition: 200 MHz
Power - Max: 200 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Active
Supplier Device Package: PG-SOT23-3-3
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 5mA, 5V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Transistor Type: PNP - Pre-Biased
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Bulk
auf Bestellung 15000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
8013+0.079 EUR
Mindestbestellmenge: 8013 Stücke
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