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IPW60R120P7 IPW60R120P7 Infineon Technologies INFN-S-A0006145425-1.pdf?t.download=true&u=5oefqw Description: N-CHANNEL POWER MOSFET
Input Capacitance (Ciss) (Max) @ Vds: 1544 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PG-TO247-3
Vgs(th) (Max) @ Id: 4V @ 410µA
Power Dissipation (Max): 95W (Tc)
Rds On (Max) @ Id, Vgs: 120mOhm @ 8.2A, 10V
Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Bulk
Produkt ist nicht verfügbar
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FP150R12KT4B11BPSA1 FP150R12KT4B11BPSA1 Infineon Technologies Infineon-FP150R12KT4_B11-DS-v03_00-EN.pdf?fileId=5546d4625b62cd8a015baa19ee2e1409 Description: IGBT MODULE 1200V 150A
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Three Phase Bridge Rectifier
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 150A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 150 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 9.35 nF @ 25 V
Produkt ist nicht verfügbar
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SAK-TC1367A-264F180EBAA Infineon Technologies Description: 32-BIT RISC FLASH MCU
Packaging: Bulk
DigiKey Programmable: Not Verified
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IPD036N04LGATMA1 IPD036N04LGATMA1 Infineon Technologies Infineon-IPD036N04L-DS-v01_00-en.pdf?fileId=db3a3043163797a6011643476a6505a5 Description: MOSFET N-CH 40V 90A TO252-31
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 3.6mOhm @ 90A, 10V
Power Dissipation (Max): 94W (Tc)
Vgs(th) (Max) @ Id: 2V @ 45µA
Supplier Device Package: PG-TO252-3-11
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 78 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6300 pF @ 20 V
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BF5020WH6327 Infineon Technologies INFNS13463-1.pdf?t.download=true&u=5oefqw Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: SC-82A, SOT-343
Current Rating (Amps): 100nA
Mounting Type: Surface Mount
Configuration: N-Channel
Gain: 32dB
Technology: MOSFET
Noise Figure: 1.2dB
Supplier Device Package: PG-SOT343-4-1
Part Status: Active
Voltage - Rated: 8 V
Voltage - Test: 5 V
Current - Test: 10 mA
Produkt ist nicht verfügbar
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SPI11N65C3IN Infineon Technologies Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Part Status: Active
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ND350N12KHPSA1 ND350N12KHPSA1 Infineon Technologies Infineon-ND350N-DS-v01_00-en_de.pdf?fileId=db3a304412b407950112b431306b53c9 Description: DIODE GP 1.2KV 350A BG-PB50ND-1
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ND350N16KHPSA1 Infineon Technologies Infineon-ND350N-DS-v01_00-en_de.pdf?fileId=db3a304412b407950112b431306b53c9 Description: DIODE GP 1.6KV 350A PB50ND-1
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BAT 17-05W H6327 BAT 17-05W H6327 Infineon Technologies INFNS15700-1.pdf?t.download=true&u=5oefqw Description: RF MIXER/DETECTOR SCHOTTKY DIODE
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BCX71GE6327 BCX71GE6327 Infineon Technologies INFNS11623-1.pdf?t.download=true&u=5oefqw Description: TRANS PNP 45V 0.1A SOT23
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 550mV @ 1.25mA, 50mA
Current - Collector Cutoff (Max): 20nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 5V
Frequency - Transition: 250MHz
Supplier Device Package: PG-SOT23
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 330 mW
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BCX71JE6327 BCX71JE6327 Infineon Technologies INFNS11623-1.pdf?t.download=true&u=5oefqw Description: TRANS PNP 45V 0.1A SOT23
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 550mV @ 1.25mA, 50mA
Current - Collector Cutoff (Max): 20nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 2mA, 5V
Frequency - Transition: 250MHz
Supplier Device Package: PG-SOT23
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 330 mW
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BCX71HE6327 BCX71HE6327 Infineon Technologies INFNS11623-1.pdf?t.download=true&u=5oefqw Description: TRANS PNP 45V 0.1A SOT23
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 550mV @ 1.25mA, 50mA
Current - Collector Cutoff (Max): 20nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 2mA, 5V
Frequency - Transition: 250MHz
Supplier Device Package: PG-SOT23
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 330 mW
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BCX71KE6327 BCX71KE6327 Infineon Technologies INFNS11623-1.pdf?t.download=true&u=5oefqw Description: SMALL SIGNAL BIPOLAR TRANSISTOR
auf Bestellung 33000 Stücke:
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BCX 71H E6327 BCX 71H E6327 Infineon Technologies INFNS11623-1.pdf?t.download=true&u=5oefqw Description: TRANS PNP 45V 0.1A SOT23
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 550mV @ 1.25mA, 50mA
Current - Collector Cutoff (Max): 20nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 2mA, 5V
Frequency - Transition: 250MHz
Supplier Device Package: PG-SOT23
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 330 mW
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BCX71H BCX71H Infineon Technologies PHGLS19403-1.pdf?t.download=true&u=5oefqw Description: SMALL SIGNAL BIPOLAR TRANSISTOR
Packaging: Bulk
Produkt ist nicht verfügbar
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BCX71GE6327HTSA1 BCX71GE6327HTSA1 Infineon Technologies bcw61_bcx71.pdf?folderId=db3a304314dca389011541d30fa21656&fileId=db3a304314dca3890115422f2cbc173b Description: TRANS PNP 45V 0.1A PG-SOT23
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 550mV @ 1.25mA, 50mA
Current - Collector Cutoff (Max): 20nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 5V
Frequency - Transition: 250MHz
Supplier Device Package: PG-SOT23
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 330 mW
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BCX71JE6433HTMA1 BCX71JE6433HTMA1 Infineon Technologies bcw61_bcx71.pdf?folderId=db3a304314dca389011541d30fa21656&fileId=db3a304314dca3890115422f2cbc173b Description: TRANS PNP 45V 0.1A PG-SOT23
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 550mV @ 1.25mA, 50mA
Current - Collector Cutoff (Max): 20nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 2mA, 5V
Frequency - Transition: 250MHz
Supplier Device Package: PG-SOT23
Part Status: Not For New Designs
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 330 mW
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ESD217B102ELE6327XTMA1 ESD217B102ELE6327XTMA1 Infineon Technologies Infineon-ESD217-B1-02EL-DS-v01_00-EN.pdf?folderId=5546d4694909da4801490a07012f053b&fileId=5546d4624933b87501496601e99b55e7 Description: TVS DIODE 14VWM 29V PGTSLP219
Packaging: Tape & Reel (TR)
Package / Case: 0402 (1006 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C (TJ)
Applications: Ethernet
Capacitance @ Frequency: 9pF @ 1MHz
Current - Peak Pulse (10/1000µs): 3A (8/20µs)
Voltage - Reverse Standoff (Typ): 14V (Max)
Supplier Device Package: PG-TSLP-2-19
Bidirectional Channels: 1
Voltage - Breakdown (Min): 8.5V
Voltage - Clamping (Max) @ Ipp: 29V (Typ)
Power - Peak Pulse: 85W
Power Line Protection: No
Part Status: Not For New Designs
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ESD217B102ELE6327XTMA1 ESD217B102ELE6327XTMA1 Infineon Technologies Infineon-ESD217-B1-02EL-DS-v01_00-EN.pdf?folderId=5546d4694909da4801490a07012f053b&fileId=5546d4624933b87501496601e99b55e7 Description: TVS DIODE 14VWM 29V PGTSLP219
Packaging: Cut Tape (CT)
Package / Case: 0402 (1006 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C (TJ)
Applications: Ethernet
Capacitance @ Frequency: 9pF @ 1MHz
Current - Peak Pulse (10/1000µs): 3A (8/20µs)
Voltage - Reverse Standoff (Typ): 14V (Max)
Supplier Device Package: PG-TSLP-2-19
Bidirectional Channels: 1
Voltage - Breakdown (Min): 8.5V
Voltage - Clamping (Max) @ Ipp: 29V (Typ)
Power - Peak Pulse: 85W
Power Line Protection: No
Part Status: Not For New Designs
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50+0.42 EUR
100+0.26 EUR
500+0.19 EUR
1000+0.18 EUR
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BSC027N03S G BSC027N03S G Infineon Technologies BSC027N03S_G.pdf Description: MOSFET N-CH 30V 25A/100A TDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 2.7mOhm @ 50A, 10V
Power Dissipation (Max): 2.8W (Ta), 89W (Tc)
Vgs(th) (Max) @ Id: 2V @ 90µA
Supplier Device Package: PG-TDSON-8-1
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 6540 pF @ 15 V
Produkt ist nicht verfügbar
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IGW50N65HS IGW50N65HS Infineon Technologies INFN-S-A0001299637-1.pdf?t.download=true&u=5oefqw Description: IGBT WITHOUT ANTI-PARALLEL DIODE
Packaging: Bulk
Part Status: Active
Produkt ist nicht verfügbar
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SLM9670AQ20FW1311XTMA1 SLM9670AQ20FW1311XTMA1 Infineon Technologies Infineon-SLM%209670-DS-v01_00-EN.pdf?fileId=5546d46269e1c019016a21819cc80c93 Description: INDUSTRIAL TPM SECURITY
Packaging: Tape & Reel (TR)
Package / Case: 32-VFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: SPI
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 1.65V ~ 1.95V, 3V ~ 3.6V
Program Memory Type: NVM (6.8kB)
Applications: Trusted Platform Module (TPM)
Core Processor: 16-Bit
Supplier Device Package: PG-VQFN-32-13
Part Status: Active
Number of I/O: 1
DigiKey Programmable: Not Verified
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SLM9670AQ20FW1311XTMA1 SLM9670AQ20FW1311XTMA1 Infineon Technologies Infineon-SLM%209670-DS-v01_00-EN.pdf?fileId=5546d46269e1c019016a21819cc80c93 Description: INDUSTRIAL TPM SECURITY
Packaging: Cut Tape (CT)
Package / Case: 32-VFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: SPI
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 1.65V ~ 1.95V, 3V ~ 3.6V
Program Memory Type: NVM (6.8kB)
Applications: Trusted Platform Module (TPM)
Core Processor: 16-Bit
Supplier Device Package: PG-VQFN-32-13
Part Status: Active
Number of I/O: 1
DigiKey Programmable: Not Verified
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3+9.01 EUR
10+6.85 EUR
25+6.31 EUR
100+5.72 EUR
250+5.44 EUR
500+5.27 EUR
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BSC150N03LD BSC150N03LD Infineon Technologies BSC150N03LD_rev1.4.pdf?fileId=db3a304316f66ee80116fb504a5d729f Description: MOSFET 2N-CH 30V 8A 8TDSON
Packaging: Bulk
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 26W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 8A
Input Capacitance (Ciss) (Max) @ Vds: 1100pF @ 15V
Rds On (Max) @ Id, Vgs: 15mOhm @ 20A, 10V
Gate Charge (Qg) (Max) @ Vgs: 6.4nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: PG-TDSON-8-4
Part Status: Active
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BSO301SPHXUMA1 BSO301SPHXUMA1 Infineon Technologies BSO301SP_Rev1+32.pdf?folderId=db3a304314dca38901154a7313d21a66&fileId=db3a304326c2768b0126d226cd5d68ac Description: MOSFET P-CH 30V 12.6A 8DSO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 12.6A (Ta)
Rds On (Max) @ Id, Vgs: 8mOhm @ 14.9A, 10V
Power Dissipation (Max): 1.79W (Ta)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-DSO-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 136 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5890 pF @ 25 V
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500+1.56 EUR
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IFX1117GSV33 IFX1117GSV33 Infineon Technologies INFNS13526-1.pdf?t.download=true&u=5oefqw Description: IC REG LIN 3.3V 1A PG-SOT223-4
Packaging: Bulk
Package / Case: TO-261-4, TO-261AA
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 1A
Operating Temperature: 0°C ~ 125°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 10 mA
Voltage - Input (Max): 15V
Number of Regulators: 1
Supplier Device Package: PG-SOT223-4
Voltage - Output (Min/Fixed): 3.3V
Part Status: Active
PSRR: 65dB (120Hz)
Voltage Dropout (Max): 1.4V @ 1A
Protection Features: Over Current, Over Temperature, Short Circuit
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BSS215P H6327 Infineon Technologies INFNS15443-1.pdf?t.download=true&u=5oefqw Description: SMALL SIGNAL P-CHANNEL MOSFET
Input Capacitance (Ciss) (Max) @ Vds: 346 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 3.6 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Part Status: Active
Supplier Device Package: PG-SOT23-3-5
Vgs(th) (Max) @ Id: 600mV @ 11µA
Power Dissipation (Max): 500mW (Ta)
Rds On (Max) @ Id, Vgs: 150mOhm @ 1.5A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Bulk
FET Type: P-Channel
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PMA7105 Infineon Technologies INFNS17057-1.pdf?t.download=true&u=5oefqw Description: 8-BIT FLASH MCU, 8051 CPU, 12MHZ
DigiKey Programmable: Not Verified
Supplier Device Package: PG-TSSOP-38
Antenna Connector: PCB, Surface Mount
Current - Transmitting: 17.1mA
Data Rate (Max): 20kbps
Applications: Remote Control, Remote Metering
Power - Output: 10dBm
Voltage - Supply: 1.9V ~ 3.6V
Operating Temperature: -40°C ~ 125°C
Data Interface: PCB, Surface Mount
Modulation or Protocol: ASK, FSK
Memory Size: 6KB Flash, 12KB ROM, 256 Byte RAM
Frequency: 315MHz, 434MHz, 868MHz, 915MHz
Mounting Type: Surface Mount
Package / Case: 38-TFSOP (0.173", 4.40mm Width)
Packaging: Bulk
Produkt ist nicht verfügbar
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IPS050N03LG IPS050N03LG Infineon Technologies INFNS27908-1.pdf?t.download=true&u=5oefqw Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 5mOhm @ 30A, 10V
Power Dissipation (Max): 68W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: PG-TO252-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3200 pF @ 15 V
auf Bestellung 1500 Stücke:
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SPD50N03S2L SPD50N03S2L Infineon Technologies Infineon-SPD50N03S2-DS-v01_02-en.pdf?fileId=db3a30431b3e89eb011b97117df80e2a Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 6.4mOhm @ 50A, 10V
Power Dissipation (Max): 136W (Tc)
Vgs(th) (Max) @ Id: 2V @ 85µA
Supplier Device Package: PG-TO252
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2530 pF @ 25 V
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BSF050N03LQ3G Infineon Technologies INFNS16729-1.pdf?t.download=true&u=5oefqw Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: DirectFET™ Isometric MX
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 60A (Tc)
Rds On (Max) @ Id, Vgs: 5mOhm @ 20A, 10V
Power Dissipation (Max): 2.2W (Ta), 28W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: MG-WDSON-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 15 V
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SPD50N03S2-07G SPD50N03S2-07G Infineon Technologies INFNS15686-1.pdf?t.download=true&u=5oefqw Description: N-CHANNEL POWER MOSFET
Input Capacitance (Ciss) (Max) @ Vds: 2170 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 46.5 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PG-TO252-3-11
Vgs(th) (Max) @ Id: 4V @ 85µA
Power Dissipation (Max): 136W (Tc)
Rds On (Max) @ Id, Vgs: 7.3mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Bulk
Produkt ist nicht verfügbar
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SPD50N03S2L-06G SPD50N03S2L-06G Infineon Technologies Infineon-SPD50N03S2-DS-v01_02-en.pdf?fileId=db3a30431b3e89eb011b97117df80e2a Description: N-CHANNEL POWER MOSFET
Part Status: Active
Packaging: Bulk
Produkt ist nicht verfügbar
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SPD50N03S2-07 G SPD50N03S2-07 G Infineon Technologies INFNS15686-1.pdf?t.download=true&u=5oefqw Description: N-CHANNEL POWER MOSFET
Input Capacitance (Ciss) (Max) @ Vds: 2170 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 46.5 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PG-TO252-3-11
Vgs(th) (Max) @ Id: 4V @ 85µA
Power Dissipation (Max): 136W (Tc)
Rds On (Max) @ Id, Vgs: 7.3mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Bulk
Produkt ist nicht verfügbar
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IRLML9301TRPBF IRLML9301TRPBF Infineon Technologies irlml9301pbf.pdf?fileId=5546d462533600a401535668e5e42640 Description: MOSFET P-CH 30V 3.6A SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.6A (Ta)
Rds On (Max) @ Id, Vgs: 64mOhm @ 3.6A, 10V
Power Dissipation (Max): 1.3W (Ta)
Vgs(th) (Max) @ Id: 2.4V @ 10µA
Supplier Device Package: Micro3™/SOT-23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 4.8 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 388 pF @ 25 V
Produkt ist nicht verfügbar
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IRLML9301TRPBF IRLML9301TRPBF Infineon Technologies irlml9301pbf.pdf?fileId=5546d462533600a401535668e5e42640 Description: MOSFET P-CH 30V 3.6A SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.6A (Ta)
Rds On (Max) @ Id, Vgs: 64mOhm @ 3.6A, 10V
Power Dissipation (Max): 1.3W (Ta)
Vgs(th) (Max) @ Id: 2.4V @ 10µA
Supplier Device Package: Micro3™/SOT-23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 4.8 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 388 pF @ 25 V
Produkt ist nicht verfügbar
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PVA3054 PVA3054 Infineon Technologies pva33.pdf Description: SSR RELAY SPST-NO 40MA 0-300V
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm), 4 Leads
Output Type: AC, DC
Mounting Type: Through Hole
Voltage - Input: 1.2VDC
Circuit: SPST-NO (1 Form A)
Operating Temperature: -40°C ~ 85°C
Termination Style: PC Pin
Load Current: 40 mA
Approval Agency: UL
Relay Type: Photo-Coupled Relay (Photorelay)
Supplier Device Package: 8-DIP Modified
Part Status: Obsolete
Voltage - Load: 0 V ~ 300 V
On-State Resistance (Max): 160 Ohms
Produkt ist nicht verfügbar
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PVA3055 PVA3055 Infineon Technologies pva30.pdf Description: SSR RELAY SPST-NO 40MA 0-300V
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PEB42652VV1.1 Infineon Technologies INTL-S-A0006019977-1.pdf?t.download=true&u=5oefqw Description: DUSLIC DUAL CHANNEL SLIC
Packaging: Bulk
Part Status: Active
auf Bestellung 2500 Stücke:
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63+8.72 EUR
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PEB4265-2TV1.1GD Infineon Technologies Description: DUSLIC DUAL CHANNEL SLIC
Packaging: Bulk
Part Status: Active
Produkt ist nicht verfügbar
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ICL5101XUMA1 ICL5101XUMA1 Infineon Technologies Infineon-ICL5101-DS-v01_30-EN.pdf?fileId=5546d4624b0b249c014b73386f216550 Description: IC LED DRIVER OFFL 16DSO
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Number of Outputs: 3
Type: AC DC Offline Switcher
Operating Temperature: -40°C ~ 125°C (TJ)
Applications: Lighting
Internal Switch(s): No
Supplier Device Package: PG-DSO-16-23
Part Status: Not For New Designs
Produkt ist nicht verfügbar
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KITAURIXTC267TFTTOBO1 KITAURIXTC267TFTTOBO1 Infineon Technologies Description: AURIX APPLICATION KIT TC267 TFT
Platform: AURIX
Utilized IC / Part: TC267
Core Processor: TriCore™
Contents: Board(s), LCD
Type: MCU 32-Bit
Mounting Type: Fixed
Packaging: Box
Produkt ist nicht verfügbar
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IRF6636TRPBF IRF6636TRPBF Infineon Technologies irf6636pbf.pdf?fileId=5546d462533600a4015355e8f7b31a41 Description: MOSFET N-CH 20V 18A DIRECTFET
Packaging: Tape & Reel (TR)
Package / Case: DirectFET™ Isometric ST
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 81A (Tc)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 18A, 10V
Power Dissipation (Max): 2.2W (Ta), 42W (Tc)
Vgs(th) (Max) @ Id: 2.45V @ 250µA
Supplier Device Package: DIRECTFET™ ST
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2420 pF @ 10 V
Produkt ist nicht verfügbar
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IPB037N06N3GATMA1 IPB037N06N3GATMA1 Infineon Technologies Infineon-IPB037N06N3%20G-DS-v02_00-EN.pdf?fileId=5546d46268554f4a01685b00fd7802f5 Description: MOSFET N-CH 60V 90A D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 11000 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 98 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PG-TO263-3
Vgs(th) (Max) @ Id: 4V @ 90µA
Power Dissipation (Max): 188W (Tc)
Rds On (Max) @ Id, Vgs: 3.7mOhm @ 90A, 10V
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
auf Bestellung 3000 Stücke:
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1000+2.08 EUR
3000+1.87 EUR
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IPB037N06N3GATMA1 IPB037N06N3GATMA1 Infineon Technologies Infineon-IPB037N06N3%20G-DS-v02_00-EN.pdf?fileId=5546d46268554f4a01685b00fd7802f5 Description: MOSFET N-CH 60V 90A D2PAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PG-TO263-3
Vgs(th) (Max) @ Id: 4V @ 90µA
Power Dissipation (Max): 188W (Tc)
Rds On (Max) @ Id, Vgs: 3.7mOhm @ 90A, 10V
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 11000 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 98 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
auf Bestellung 3672 Stücke:
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4+6.15 EUR
10+4 EUR
50+3.07 EUR
100+2.77 EUR
500+2.25 EUR
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BGH 92M E6327 Infineon Technologies Product+and+Application+Guide.pdf?folderId=db3a30431441fb5d01146ec76de80910&fileId=db3a304329a0f6ee0129b13c338f0372 Description: FILTER LC ESD SMD
Produkt ist nicht verfügbar
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IRS21814SPBF IRS21814SPBF Infineon Technologies INFN-S-A0002363258-1.pdf?t.download=true&u=5oefqw description Description: IC GATE DRVR HALF-BRIDGE 14SOIC
Packaging: Tube
Part Status: Active
Current - Peak Output (Source, Sink): 1.9A, 2.3A
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Gate Type: IGBT, MOSFET (N-Channel)
Number of Drivers: 2
Driven Configuration: Half-Bridge
Channel Type: Independent
Rise / Fall Time (Typ): 40ns, 20ns
Supplier Device Package: 14-SOIC
High Side Voltage - Max (Bootstrap): 600 V
Input Type: Non-Inverting
Voltage - Supply: 10V ~ 20V
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 14-SOIC (0.154", 3.90mm Width)
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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IRS21814PBF IRS21814PBF Infineon Technologies INFN-S-A0002363258-1.pdf?t.download=true&u=5oefqw description Description: IC GATE DRVR HALF-BRIDGE 14DIP
DigiKey Programmable: Not Verified
Part Status: Discontinued at Digi-Key
Current - Peak Output (Source, Sink): 1.9A, 2.3A
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Gate Type: IGBT, MOSFET (N-Channel)
Driven Configuration: Half-Bridge
Channel Type: Independent
Rise / Fall Time (Typ): 40ns, 20ns
Supplier Device Package: 14-DIP
High Side Voltage - Max (Bootstrap): 600 V
Input Type: Non-Inverting
Voltage - Supply: 10V ~ 20V
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: 14-DIP (0.300", 7.62mm)
Packaging: Tube
Number of Drivers: 2
Produkt ist nicht verfügbar
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AUIRS21814S AUIRS21814S Infineon Technologies IRSDS19254-1.pdf?t.download=true&u=5oefqw Description: IC GATE DRVR HALF-BRIDGE 14SOIC
Part Status: Obsolete
Current - Peak Output (Source, Sink): 1.9A, 2.3A
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Gate Type: IGBT, MOSFET (N-Channel)
Number of Drivers: 2
Driven Configuration: Half-Bridge
Channel Type: Independent
Rise / Fall Time (Typ): 15ns, 15ns
Supplier Device Package: 14-SOIC
High Side Voltage - Max (Bootstrap): 600 V
Input Type: Inverting
Voltage - Supply: 10V ~ 20V
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Packaging: Tube
DigiKey Programmable: Not Verified
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IRS21814MPBF IRS21814MPBF Infineon Technologies irs21814mpbf.pdf?fileId=5546d462533600a401535676c8a827d6 Description: IC GATE DRVR HALF-BRIDGE 16MLPQ
Part Status: Obsolete
Current - Peak Output (Source, Sink): 1.9A, 2.3A
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Gate Type: MOSFET (N-Channel)
Number of Drivers: 2
Driven Configuration: Half-Bridge
Channel Type: Independent
Rise / Fall Time (Typ): 40ns, 20ns
Supplier Device Package: 16-MLPQ (4x4)
High Side Voltage - Max (Bootstrap): 600 V
Input Type: Non-Inverting
Voltage - Supply: 10V ~ 20V
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 16-VFQFN Exposed Pad, 14 Leads
Packaging: Tube
DigiKey Programmable: Not Verified
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MMBTA06LT1 MMBTA06LT1 Infineon Technologies ONSMS30148-1.pdf?t.download=true&u=5oefqw description Description: TRANS NPN 80V 0.5A SOT23-3
Voltage - Collector Emitter Breakdown (Max): 80 V
Current - Collector (Ic) (Max): 500 mA
Part Status: Obsolete
Supplier Device Package: SOT-23-3 (TO-236)
Frequency - Transition: 100MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 1V
Current - Collector Cutoff (Max): 100nA
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Bulk
Power - Max: 225 mW
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PSB2163NV3.1G Infineon Technologies SIEMS00943-1.pdf?t.download=true&u=5oefqw Description: ARCOFI AUDIO RINGING CODEC
Packaging: Bulk
auf Bestellung 275 Stücke:
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22+26.83 EUR
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PEB20560V3.1DOC PEB20560V3.1DOC Infineon Technologies Description: TIME SLOT ASSIGNER
Packaging: Bulk
auf Bestellung 14230 Stücke:
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8+81.73 EUR
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PSB2163NV3.1 Infineon Technologies SIEMS00943-1.pdf?t.download=true&u=5oefqw Description: ARCOFI AUDIO RINGING CODEC
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PEB20570FV3.1 PEB20570FV3.1 Infineon Technologies delic-lc_delic-pb.pdf?t.download=true&u=ovmfp3 Description: LINE & PORT INTERFACE CONTROLLER
Packaging: Bulk
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Function: Line Card Controller
Interface: ISDN
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 3.13V ~ 3.47V
Current - Supply: 272.6mA
Supplier Device Package: PG-TQFP-100-3
Part Status: Active
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11+50.47 EUR
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PSB7280FV3.1D Infineon Technologies PSB7280.pdf?t.download=true&u=ovmfp3 Description: JOINT AUDIO DECODER-ENCODER
Packaging: Bulk
Part Status: Active
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10+56.85 EUR
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PEB2096HV3.1 PEB2096HV3.1 Infineon Technologies Description: OCTAT-P OCTAL TRANSCEICER
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PEF22554HTV3.1 Infineon Technologies Description: QUADFALC FRAMER & LINE INTERFACE
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BC857AE6327 BC857AE6327 Infineon Technologies INFNS16508-1.pdf?t.download=true&u=5oefqw Description: TRANS PNP 45V 0.1A SOT23
Frequency - Transition: 250MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 125 @ 2mA, 5V
Current - Collector Cutoff (Max): 15nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Operating Temperature: 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Bulk
Power - Max: 330 mW
Voltage - Collector Emitter Breakdown (Max): 45 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Active
Supplier Device Package: PG-SOT23
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IPA023N04NM3SXKSA1 Infineon Technologies Description: TRENCH <= 40V
Part Status: Active
Packaging: Tube
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IPW60R120P7 INFN-S-A0006145425-1.pdf?t.download=true&u=5oefqw
IPW60R120P7
Hersteller: Infineon Technologies
Description: N-CHANNEL POWER MOSFET
Input Capacitance (Ciss) (Max) @ Vds: 1544 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PG-TO247-3
Vgs(th) (Max) @ Id: 4V @ 410µA
Power Dissipation (Max): 95W (Tc)
Rds On (Max) @ Id, Vgs: 120mOhm @ 8.2A, 10V
Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Bulk
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FP150R12KT4B11BPSA1 Infineon-FP150R12KT4_B11-DS-v03_00-EN.pdf?fileId=5546d4625b62cd8a015baa19ee2e1409
FP150R12KT4B11BPSA1
Hersteller: Infineon Technologies
Description: IGBT MODULE 1200V 150A
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Three Phase Bridge Rectifier
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 150A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 150 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 9.35 nF @ 25 V
Produkt ist nicht verfügbar
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SAK-TC1367A-264F180EBAA
Hersteller: Infineon Technologies
Description: 32-BIT RISC FLASH MCU
Packaging: Bulk
DigiKey Programmable: Not Verified
auf Bestellung 451 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
30+19.53 EUR
Mindestbestellmenge: 30 Stücke
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IPD036N04LGATMA1 Infineon-IPD036N04L-DS-v01_00-en.pdf?fileId=db3a3043163797a6011643476a6505a5
IPD036N04LGATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 40V 90A TO252-31
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 3.6mOhm @ 90A, 10V
Power Dissipation (Max): 94W (Tc)
Vgs(th) (Max) @ Id: 2V @ 45µA
Supplier Device Package: PG-TO252-3-11
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 78 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6300 pF @ 20 V
auf Bestellung 35000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2500+1.05 EUR
5000+0.98 EUR
7500+0.93 EUR
12500+0.89 EUR
17500+0.87 EUR
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BF5020WH6327 INFNS13463-1.pdf?t.download=true&u=5oefqw
Hersteller: Infineon Technologies
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: SC-82A, SOT-343
Current Rating (Amps): 100nA
Mounting Type: Surface Mount
Configuration: N-Channel
Gain: 32dB
Technology: MOSFET
Noise Figure: 1.2dB
Supplier Device Package: PG-SOT343-4-1
Part Status: Active
Voltage - Rated: 8 V
Voltage - Test: 5 V
Current - Test: 10 mA
Produkt ist nicht verfügbar
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SPI11N65C3IN
Hersteller: Infineon Technologies
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Part Status: Active
Produkt ist nicht verfügbar
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ND350N12KHPSA1 Infineon-ND350N-DS-v01_00-en_de.pdf?fileId=db3a304412b407950112b431306b53c9
ND350N12KHPSA1
Hersteller: Infineon Technologies
Description: DIODE GP 1.2KV 350A BG-PB50ND-1
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1+339.77 EUR
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ND350N16KHPSA1 Infineon-ND350N-DS-v01_00-en_de.pdf?fileId=db3a304412b407950112b431306b53c9
Hersteller: Infineon Technologies
Description: DIODE GP 1.6KV 350A PB50ND-1
Produkt ist nicht verfügbar
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BAT 17-05W H6327 INFNS15700-1.pdf?t.download=true&u=5oefqw
BAT 17-05W H6327
Hersteller: Infineon Technologies
Description: RF MIXER/DETECTOR SCHOTTKY DIODE
auf Bestellung 10000 Stücke:
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AnzahlPrivatkunde
3718+0.15 EUR
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BCX71GE6327 INFNS11623-1.pdf?t.download=true&u=5oefqw
BCX71GE6327
Hersteller: Infineon Technologies
Description: TRANS PNP 45V 0.1A SOT23
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 550mV @ 1.25mA, 50mA
Current - Collector Cutoff (Max): 20nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 5V
Frequency - Transition: 250MHz
Supplier Device Package: PG-SOT23
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 330 mW
auf Bestellung 47500 Stücke:
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AnzahlPrivatkunde
6869+0.076 EUR
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BCX71JE6327 INFNS11623-1.pdf?t.download=true&u=5oefqw
BCX71JE6327
Hersteller: Infineon Technologies
Description: TRANS PNP 45V 0.1A SOT23
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 550mV @ 1.25mA, 50mA
Current - Collector Cutoff (Max): 20nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 2mA, 5V
Frequency - Transition: 250MHz
Supplier Device Package: PG-SOT23
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 330 mW
auf Bestellung 54500 Stücke:
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AnzahlPrivatkunde
7454+0.083 EUR
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BCX71HE6327 INFNS11623-1.pdf?t.download=true&u=5oefqw
BCX71HE6327
Hersteller: Infineon Technologies
Description: TRANS PNP 45V 0.1A SOT23
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 550mV @ 1.25mA, 50mA
Current - Collector Cutoff (Max): 20nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 2mA, 5V
Frequency - Transition: 250MHz
Supplier Device Package: PG-SOT23
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 330 mW
auf Bestellung 1275000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
6869+0.076 EUR
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BCX71KE6327 INFNS11623-1.pdf?t.download=true&u=5oefqw
BCX71KE6327
Hersteller: Infineon Technologies
Description: SMALL SIGNAL BIPOLAR TRANSISTOR
auf Bestellung 33000 Stücke:
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Mindestbestellmenge: 15000 Stücke
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BCX 71H E6327 INFNS11623-1.pdf?t.download=true&u=5oefqw
BCX 71H E6327
Hersteller: Infineon Technologies
Description: TRANS PNP 45V 0.1A SOT23
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 550mV @ 1.25mA, 50mA
Current - Collector Cutoff (Max): 20nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 2mA, 5V
Frequency - Transition: 250MHz
Supplier Device Package: PG-SOT23
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 330 mW
auf Bestellung 30000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
7454+0.083 EUR
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BCX71H PHGLS19403-1.pdf?t.download=true&u=5oefqw
BCX71H
Hersteller: Infineon Technologies
Description: SMALL SIGNAL BIPOLAR TRANSISTOR
Packaging: Bulk
Produkt ist nicht verfügbar
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BCX71GE6327HTSA1 bcw61_bcx71.pdf?folderId=db3a304314dca389011541d30fa21656&fileId=db3a304314dca3890115422f2cbc173b
BCX71GE6327HTSA1
Hersteller: Infineon Technologies
Description: TRANS PNP 45V 0.1A PG-SOT23
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 550mV @ 1.25mA, 50mA
Current - Collector Cutoff (Max): 20nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 5V
Frequency - Transition: 250MHz
Supplier Device Package: PG-SOT23
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 330 mW
auf Bestellung 702500 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
4706+0.11 EUR
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BCX71JE6433HTMA1 bcw61_bcx71.pdf?folderId=db3a304314dca389011541d30fa21656&fileId=db3a304314dca3890115422f2cbc173b
BCX71JE6433HTMA1
Hersteller: Infineon Technologies
Description: TRANS PNP 45V 0.1A PG-SOT23
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 550mV @ 1.25mA, 50mA
Current - Collector Cutoff (Max): 20nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 2mA, 5V
Frequency - Transition: 250MHz
Supplier Device Package: PG-SOT23
Part Status: Not For New Designs
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 330 mW
auf Bestellung 573000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
4706+0.11 EUR
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ESD217B102ELE6327XTMA1 Infineon-ESD217-B1-02EL-DS-v01_00-EN.pdf?folderId=5546d4694909da4801490a07012f053b&fileId=5546d4624933b87501496601e99b55e7
ESD217B102ELE6327XTMA1
Hersteller: Infineon Technologies
Description: TVS DIODE 14VWM 29V PGTSLP219
Packaging: Tape & Reel (TR)
Package / Case: 0402 (1006 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C (TJ)
Applications: Ethernet
Capacitance @ Frequency: 9pF @ 1MHz
Current - Peak Pulse (10/1000µs): 3A (8/20µs)
Voltage - Reverse Standoff (Typ): 14V (Max)
Supplier Device Package: PG-TSLP-2-19
Bidirectional Channels: 1
Voltage - Breakdown (Min): 8.5V
Voltage - Clamping (Max) @ Ipp: 29V (Typ)
Power - Peak Pulse: 85W
Power Line Protection: No
Part Status: Not For New Designs
auf Bestellung 60000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
15000+0.12 EUR
30000+0.11 EUR
Mindestbestellmenge: 15000 Stücke
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ESD217B102ELE6327XTMA1 Infineon-ESD217-B1-02EL-DS-v01_00-EN.pdf?folderId=5546d4694909da4801490a07012f053b&fileId=5546d4624933b87501496601e99b55e7
ESD217B102ELE6327XTMA1
Hersteller: Infineon Technologies
Description: TVS DIODE 14VWM 29V PGTSLP219
Packaging: Cut Tape (CT)
Package / Case: 0402 (1006 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C (TJ)
Applications: Ethernet
Capacitance @ Frequency: 9pF @ 1MHz
Current - Peak Pulse (10/1000µs): 3A (8/20µs)
Voltage - Reverse Standoff (Typ): 14V (Max)
Supplier Device Package: PG-TSLP-2-19
Bidirectional Channels: 1
Voltage - Breakdown (Min): 8.5V
Voltage - Clamping (Max) @ Ipp: 29V (Typ)
Power - Peak Pulse: 85W
Power Line Protection: No
Part Status: Not For New Designs
auf Bestellung 65742 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
32+0.67 EUR
50+0.42 EUR
100+0.26 EUR
500+0.19 EUR
1000+0.18 EUR
2000+0.15 EUR
5000+0.13 EUR
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BSC027N03S G BSC027N03S_G.pdf
BSC027N03S G
Hersteller: Infineon Technologies
Description: MOSFET N-CH 30V 25A/100A TDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 2.7mOhm @ 50A, 10V
Power Dissipation (Max): 2.8W (Ta), 89W (Tc)
Vgs(th) (Max) @ Id: 2V @ 90µA
Supplier Device Package: PG-TDSON-8-1
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 6540 pF @ 15 V
Produkt ist nicht verfügbar
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IGW50N65HS INFN-S-A0001299637-1.pdf?t.download=true&u=5oefqw
IGW50N65HS
Hersteller: Infineon Technologies
Description: IGBT WITHOUT ANTI-PARALLEL DIODE
Packaging: Bulk
Part Status: Active
Produkt ist nicht verfügbar
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SLM9670AQ20FW1311XTMA1 Infineon-SLM%209670-DS-v01_00-EN.pdf?fileId=5546d46269e1c019016a21819cc80c93
SLM9670AQ20FW1311XTMA1
Hersteller: Infineon Technologies
Description: INDUSTRIAL TPM SECURITY
Packaging: Tape & Reel (TR)
Package / Case: 32-VFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: SPI
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 1.65V ~ 1.95V, 3V ~ 3.6V
Program Memory Type: NVM (6.8kB)
Applications: Trusted Platform Module (TPM)
Core Processor: 16-Bit
Supplier Device Package: PG-VQFN-32-13
Part Status: Active
Number of I/O: 1
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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SLM9670AQ20FW1311XTMA1 Infineon-SLM%209670-DS-v01_00-EN.pdf?fileId=5546d46269e1c019016a21819cc80c93
SLM9670AQ20FW1311XTMA1
Hersteller: Infineon Technologies
Description: INDUSTRIAL TPM SECURITY
Packaging: Cut Tape (CT)
Package / Case: 32-VFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: SPI
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 1.65V ~ 1.95V, 3V ~ 3.6V
Program Memory Type: NVM (6.8kB)
Applications: Trusted Platform Module (TPM)
Core Processor: 16-Bit
Supplier Device Package: PG-VQFN-32-13
Part Status: Active
Number of I/O: 1
DigiKey Programmable: Not Verified
auf Bestellung 522 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3+9.01 EUR
10+6.85 EUR
25+6.31 EUR
100+5.72 EUR
250+5.44 EUR
500+5.27 EUR
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BSC150N03LD BSC150N03LD_rev1.4.pdf?fileId=db3a304316f66ee80116fb504a5d729f
BSC150N03LD
Hersteller: Infineon Technologies
Description: MOSFET 2N-CH 30V 8A 8TDSON
Packaging: Bulk
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 26W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 8A
Input Capacitance (Ciss) (Max) @ Vds: 1100pF @ 15V
Rds On (Max) @ Id, Vgs: 15mOhm @ 20A, 10V
Gate Charge (Qg) (Max) @ Vgs: 6.4nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: PG-TDSON-8-4
Part Status: Active
Produkt ist nicht verfügbar
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BSO301SPHXUMA1 BSO301SP_Rev1+32.pdf?folderId=db3a304314dca38901154a7313d21a66&fileId=db3a304326c2768b0126d226cd5d68ac
BSO301SPHXUMA1
Hersteller: Infineon Technologies
Description: MOSFET P-CH 30V 12.6A 8DSO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 12.6A (Ta)
Rds On (Max) @ Id, Vgs: 8mOhm @ 14.9A, 10V
Power Dissipation (Max): 1.79W (Ta)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-DSO-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 136 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5890 pF @ 25 V
auf Bestellung 7777 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
6+3.92 EUR
10+2.67 EUR
100+1.89 EUR
500+1.56 EUR
1000+1.44 EUR
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IFX1117GSV33 INFNS13526-1.pdf?t.download=true&u=5oefqw
IFX1117GSV33
Hersteller: Infineon Technologies
Description: IC REG LIN 3.3V 1A PG-SOT223-4
Packaging: Bulk
Package / Case: TO-261-4, TO-261AA
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 1A
Operating Temperature: 0°C ~ 125°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 10 mA
Voltage - Input (Max): 15V
Number of Regulators: 1
Supplier Device Package: PG-SOT223-4
Voltage - Output (Min/Fixed): 3.3V
Part Status: Active
PSRR: 65dB (120Hz)
Voltage Dropout (Max): 1.4V @ 1A
Protection Features: Over Current, Over Temperature, Short Circuit
auf Bestellung 1004 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
525+1.02 EUR
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BSS215P H6327 INFNS15443-1.pdf?t.download=true&u=5oefqw
Hersteller: Infineon Technologies
Description: SMALL SIGNAL P-CHANNEL MOSFET
Input Capacitance (Ciss) (Max) @ Vds: 346 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 3.6 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Part Status: Active
Supplier Device Package: PG-SOT23-3-5
Vgs(th) (Max) @ Id: 600mV @ 11µA
Power Dissipation (Max): 500mW (Ta)
Rds On (Max) @ Id, Vgs: 150mOhm @ 1.5A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Bulk
FET Type: P-Channel
Produkt ist nicht verfügbar
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PMA7105 INFNS17057-1.pdf?t.download=true&u=5oefqw
Hersteller: Infineon Technologies
Description: 8-BIT FLASH MCU, 8051 CPU, 12MHZ
DigiKey Programmable: Not Verified
Supplier Device Package: PG-TSSOP-38
Antenna Connector: PCB, Surface Mount
Current - Transmitting: 17.1mA
Data Rate (Max): 20kbps
Applications: Remote Control, Remote Metering
Power - Output: 10dBm
Voltage - Supply: 1.9V ~ 3.6V
Operating Temperature: -40°C ~ 125°C
Data Interface: PCB, Surface Mount
Modulation or Protocol: ASK, FSK
Memory Size: 6KB Flash, 12KB ROM, 256 Byte RAM
Frequency: 315MHz, 434MHz, 868MHz, 915MHz
Mounting Type: Surface Mount
Package / Case: 38-TFSOP (0.173", 4.40mm Width)
Packaging: Bulk
Produkt ist nicht verfügbar
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IPS050N03LG INFNS27908-1.pdf?t.download=true&u=5oefqw
IPS050N03LG
Hersteller: Infineon Technologies
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 5mOhm @ 30A, 10V
Power Dissipation (Max): 68W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: PG-TO252-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3200 pF @ 15 V
auf Bestellung 1500 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
834+0.65 EUR
Mindestbestellmenge: 834 Stücke
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SPD50N03S2L Infineon-SPD50N03S2-DS-v01_02-en.pdf?fileId=db3a30431b3e89eb011b97117df80e2a
SPD50N03S2L
Hersteller: Infineon Technologies
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 6.4mOhm @ 50A, 10V
Power Dissipation (Max): 136W (Tc)
Vgs(th) (Max) @ Id: 2V @ 85µA
Supplier Device Package: PG-TO252
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2530 pF @ 25 V
auf Bestellung 1600 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
545+1.01 EUR
Mindestbestellmenge: 545 Stücke
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BSF050N03LQ3G INFNS16729-1.pdf?t.download=true&u=5oefqw
Hersteller: Infineon Technologies
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: DirectFET™ Isometric MX
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 60A (Tc)
Rds On (Max) @ Id, Vgs: 5mOhm @ 20A, 10V
Power Dissipation (Max): 2.2W (Ta), 28W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: MG-WDSON-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 15 V
auf Bestellung 14925 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
525+1.05 EUR
Mindestbestellmenge: 525 Stücke
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SPD50N03S2-07G INFNS15686-1.pdf?t.download=true&u=5oefqw
SPD50N03S2-07G
Hersteller: Infineon Technologies
Description: N-CHANNEL POWER MOSFET
Input Capacitance (Ciss) (Max) @ Vds: 2170 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 46.5 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PG-TO252-3-11
Vgs(th) (Max) @ Id: 4V @ 85µA
Power Dissipation (Max): 136W (Tc)
Rds On (Max) @ Id, Vgs: 7.3mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Bulk
Produkt ist nicht verfügbar
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SPD50N03S2L-06G Infineon-SPD50N03S2-DS-v01_02-en.pdf?fileId=db3a30431b3e89eb011b97117df80e2a
SPD50N03S2L-06G
Hersteller: Infineon Technologies
Description: N-CHANNEL POWER MOSFET
Part Status: Active
Packaging: Bulk
Produkt ist nicht verfügbar
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SPD50N03S2-07 G INFNS15686-1.pdf?t.download=true&u=5oefqw
SPD50N03S2-07 G
Hersteller: Infineon Technologies
Description: N-CHANNEL POWER MOSFET
Input Capacitance (Ciss) (Max) @ Vds: 2170 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 46.5 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PG-TO252-3-11
Vgs(th) (Max) @ Id: 4V @ 85µA
Power Dissipation (Max): 136W (Tc)
Rds On (Max) @ Id, Vgs: 7.3mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Bulk
Produkt ist nicht verfügbar
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IRLML9301TRPBF irlml9301pbf.pdf?fileId=5546d462533600a401535668e5e42640
IRLML9301TRPBF
Hersteller: Infineon Technologies
Description: MOSFET P-CH 30V 3.6A SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.6A (Ta)
Rds On (Max) @ Id, Vgs: 64mOhm @ 3.6A, 10V
Power Dissipation (Max): 1.3W (Ta)
Vgs(th) (Max) @ Id: 2.4V @ 10µA
Supplier Device Package: Micro3™/SOT-23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 4.8 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 388 pF @ 25 V
Produkt ist nicht verfügbar
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IRLML9301TRPBF irlml9301pbf.pdf?fileId=5546d462533600a401535668e5e42640
IRLML9301TRPBF
Hersteller: Infineon Technologies
Description: MOSFET P-CH 30V 3.6A SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.6A (Ta)
Rds On (Max) @ Id, Vgs: 64mOhm @ 3.6A, 10V
Power Dissipation (Max): 1.3W (Ta)
Vgs(th) (Max) @ Id: 2.4V @ 10µA
Supplier Device Package: Micro3™/SOT-23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 4.8 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 388 pF @ 25 V
Produkt ist nicht verfügbar
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PVA3054 pva33.pdf
PVA3054
Hersteller: Infineon Technologies
Description: SSR RELAY SPST-NO 40MA 0-300V
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm), 4 Leads
Output Type: AC, DC
Mounting Type: Through Hole
Voltage - Input: 1.2VDC
Circuit: SPST-NO (1 Form A)
Operating Temperature: -40°C ~ 85°C
Termination Style: PC Pin
Load Current: 40 mA
Approval Agency: UL
Relay Type: Photo-Coupled Relay (Photorelay)
Supplier Device Package: 8-DIP Modified
Part Status: Obsolete
Voltage - Load: 0 V ~ 300 V
On-State Resistance (Max): 160 Ohms
Produkt ist nicht verfügbar
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PVA3055 pva30.pdf
PVA3055
Hersteller: Infineon Technologies
Description: SSR RELAY SPST-NO 40MA 0-300V
Produkt ist nicht verfügbar
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PEB42652VV1.1 INTL-S-A0006019977-1.pdf?t.download=true&u=5oefqw
Hersteller: Infineon Technologies
Description: DUSLIC DUAL CHANNEL SLIC
Packaging: Bulk
Part Status: Active
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
63+8.72 EUR
Mindestbestellmenge: 63 Stücke
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PEB4265-2TV1.1GD
Hersteller: Infineon Technologies
Description: DUSLIC DUAL CHANNEL SLIC
Packaging: Bulk
Part Status: Active
Produkt ist nicht verfügbar
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ICL5101XUMA1 Infineon-ICL5101-DS-v01_30-EN.pdf?fileId=5546d4624b0b249c014b73386f216550
ICL5101XUMA1
Hersteller: Infineon Technologies
Description: IC LED DRIVER OFFL 16DSO
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Number of Outputs: 3
Type: AC DC Offline Switcher
Operating Temperature: -40°C ~ 125°C (TJ)
Applications: Lighting
Internal Switch(s): No
Supplier Device Package: PG-DSO-16-23
Part Status: Not For New Designs
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
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KITAURIXTC267TFTTOBO1
KITAURIXTC267TFTTOBO1
Hersteller: Infineon Technologies
Description: AURIX APPLICATION KIT TC267 TFT
Platform: AURIX
Utilized IC / Part: TC267
Core Processor: TriCore™
Contents: Board(s), LCD
Type: MCU 32-Bit
Mounting Type: Fixed
Packaging: Box
Produkt ist nicht verfügbar
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IRF6636TRPBF irf6636pbf.pdf?fileId=5546d462533600a4015355e8f7b31a41
IRF6636TRPBF
Hersteller: Infineon Technologies
Description: MOSFET N-CH 20V 18A DIRECTFET
Packaging: Tape & Reel (TR)
Package / Case: DirectFET™ Isometric ST
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 81A (Tc)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 18A, 10V
Power Dissipation (Max): 2.2W (Ta), 42W (Tc)
Vgs(th) (Max) @ Id: 2.45V @ 250µA
Supplier Device Package: DIRECTFET™ ST
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2420 pF @ 10 V
Produkt ist nicht verfügbar
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IPB037N06N3GATMA1 Infineon-IPB037N06N3%20G-DS-v02_00-EN.pdf?fileId=5546d46268554f4a01685b00fd7802f5
IPB037N06N3GATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 60V 90A D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 11000 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 98 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PG-TO263-3
Vgs(th) (Max) @ Id: 4V @ 90µA
Power Dissipation (Max): 188W (Tc)
Rds On (Max) @ Id, Vgs: 3.7mOhm @ 90A, 10V
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1000+2.08 EUR
3000+1.87 EUR
Mindestbestellmenge: 1000 Stücke
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IPB037N06N3GATMA1 Infineon-IPB037N06N3%20G-DS-v02_00-EN.pdf?fileId=5546d46268554f4a01685b00fd7802f5
IPB037N06N3GATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 60V 90A D2PAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PG-TO263-3
Vgs(th) (Max) @ Id: 4V @ 90µA
Power Dissipation (Max): 188W (Tc)
Rds On (Max) @ Id, Vgs: 3.7mOhm @ 90A, 10V
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 11000 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 98 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
auf Bestellung 3672 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
4+6.15 EUR
10+4 EUR
50+3.07 EUR
100+2.77 EUR
500+2.25 EUR
Mindestbestellmenge: 4 Stücke
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BGH 92M E6327 Product+and+Application+Guide.pdf?folderId=db3a30431441fb5d01146ec76de80910&fileId=db3a304329a0f6ee0129b13c338f0372
Hersteller: Infineon Technologies
Description: FILTER LC ESD SMD
Produkt ist nicht verfügbar
Mindestbestellmenge: 7500 Stücke
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IRS21814SPBF description INFN-S-A0002363258-1.pdf?t.download=true&u=5oefqw
IRS21814SPBF
Hersteller: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 14SOIC
Packaging: Tube
Part Status: Active
Current - Peak Output (Source, Sink): 1.9A, 2.3A
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Gate Type: IGBT, MOSFET (N-Channel)
Number of Drivers: 2
Driven Configuration: Half-Bridge
Channel Type: Independent
Rise / Fall Time (Typ): 40ns, 20ns
Supplier Device Package: 14-SOIC
High Side Voltage - Max (Bootstrap): 600 V
Input Type: Non-Inverting
Voltage - Supply: 10V ~ 20V
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 14-SOIC (0.154", 3.90mm Width)
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
Mindestbestellmenge: 1980 Stücke
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IRS21814PBF description INFN-S-A0002363258-1.pdf?t.download=true&u=5oefqw
IRS21814PBF
Hersteller: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 14DIP
DigiKey Programmable: Not Verified
Part Status: Discontinued at Digi-Key
Current - Peak Output (Source, Sink): 1.9A, 2.3A
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Gate Type: IGBT, MOSFET (N-Channel)
Driven Configuration: Half-Bridge
Channel Type: Independent
Rise / Fall Time (Typ): 40ns, 20ns
Supplier Device Package: 14-DIP
High Side Voltage - Max (Bootstrap): 600 V
Input Type: Non-Inverting
Voltage - Supply: 10V ~ 20V
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: 14-DIP (0.300", 7.62mm)
Packaging: Tube
Number of Drivers: 2
Produkt ist nicht verfügbar
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AUIRS21814S IRSDS19254-1.pdf?t.download=true&u=5oefqw
AUIRS21814S
Hersteller: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 14SOIC
Part Status: Obsolete
Current - Peak Output (Source, Sink): 1.9A, 2.3A
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Gate Type: IGBT, MOSFET (N-Channel)
Number of Drivers: 2
Driven Configuration: Half-Bridge
Channel Type: Independent
Rise / Fall Time (Typ): 15ns, 15ns
Supplier Device Package: 14-SOIC
High Side Voltage - Max (Bootstrap): 600 V
Input Type: Inverting
Voltage - Supply: 10V ~ 20V
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Packaging: Tube
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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IRS21814MPBF irs21814mpbf.pdf?fileId=5546d462533600a401535676c8a827d6
IRS21814MPBF
Hersteller: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 16MLPQ
Part Status: Obsolete
Current - Peak Output (Source, Sink): 1.9A, 2.3A
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Gate Type: MOSFET (N-Channel)
Number of Drivers: 2
Driven Configuration: Half-Bridge
Channel Type: Independent
Rise / Fall Time (Typ): 40ns, 20ns
Supplier Device Package: 16-MLPQ (4x4)
High Side Voltage - Max (Bootstrap): 600 V
Input Type: Non-Inverting
Voltage - Supply: 10V ~ 20V
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 16-VFQFN Exposed Pad, 14 Leads
Packaging: Tube
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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MMBTA06LT1 description ONSMS30148-1.pdf?t.download=true&u=5oefqw
MMBTA06LT1
Hersteller: Infineon Technologies
Description: TRANS NPN 80V 0.5A SOT23-3
Voltage - Collector Emitter Breakdown (Max): 80 V
Current - Collector (Ic) (Max): 500 mA
Part Status: Obsolete
Supplier Device Package: SOT-23-3 (TO-236)
Frequency - Transition: 100MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 1V
Current - Collector Cutoff (Max): 100nA
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Bulk
Power - Max: 225 mW
Produkt ist nicht verfügbar
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PSB2163NV3.1G SIEMS00943-1.pdf?t.download=true&u=5oefqw
Hersteller: Infineon Technologies
Description: ARCOFI AUDIO RINGING CODEC
Packaging: Bulk
auf Bestellung 275 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
22+26.83 EUR
Mindestbestellmenge: 22 Stücke
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PEB20560V3.1DOC
PEB20560V3.1DOC
Hersteller: Infineon Technologies
Description: TIME SLOT ASSIGNER
Packaging: Bulk
auf Bestellung 14230 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
8+81.73 EUR
Mindestbestellmenge: 8 Stücke
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PSB2163NV3.1 SIEMS00943-1.pdf?t.download=true&u=5oefqw
Hersteller: Infineon Technologies
Description: ARCOFI AUDIO RINGING CODEC
Produkt ist nicht verfügbar
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PEB20570FV3.1 delic-lc_delic-pb.pdf?t.download=true&u=ovmfp3
PEB20570FV3.1
Hersteller: Infineon Technologies
Description: LINE & PORT INTERFACE CONTROLLER
Packaging: Bulk
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Function: Line Card Controller
Interface: ISDN
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 3.13V ~ 3.47V
Current - Supply: 272.6mA
Supplier Device Package: PG-TQFP-100-3
Part Status: Active
auf Bestellung 2571 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
11+50.47 EUR
Mindestbestellmenge: 11 Stücke
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PSB7280FV3.1D PSB7280.pdf?t.download=true&u=ovmfp3
Hersteller: Infineon Technologies
Description: JOINT AUDIO DECODER-ENCODER
Packaging: Bulk
Part Status: Active
auf Bestellung 80 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
10+56.85 EUR
Mindestbestellmenge: 10 Stücke
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PEB2096HV3.1
PEB2096HV3.1
Hersteller: Infineon Technologies
Description: OCTAT-P OCTAL TRANSCEICER
Produkt ist nicht verfügbar
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PEF22554HTV3.1
Hersteller: Infineon Technologies
Description: QUADFALC FRAMER & LINE INTERFACE
Produkt ist nicht verfügbar
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BC857AE6327 INFNS16508-1.pdf?t.download=true&u=5oefqw
BC857AE6327
Hersteller: Infineon Technologies
Description: TRANS PNP 45V 0.1A SOT23
Frequency - Transition: 250MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 125 @ 2mA, 5V
Current - Collector Cutoff (Max): 15nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Operating Temperature: 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Bulk
Power - Max: 330 mW
Voltage - Collector Emitter Breakdown (Max): 45 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Active
Supplier Device Package: PG-SOT23
auf Bestellung 36000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
7818+0.076 EUR
Mindestbestellmenge: 7818 Stücke
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IPA023N04NM3SXKSA1
Hersteller: Infineon Technologies
Description: TRENCH <= 40V
Part Status: Active
Packaging: Tube
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