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FS50R12W2T7B11BOMA1 FS50R12W2T7B11BOMA1 Infineon Technologies FS50R12W2T7_B11_V2.0_12-13-19.pdf Description: IGBT MOD 1200V 50A
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Full Bridge
Operating Temperature: -40°C ~ 175°C
Vce(on) (Max) @ Vge, Ic: 1.5V @ 15V, 50A (Typ)
NTC Thermistor: No
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 50 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 7.9 µA
Input Capacitance (Cies) @ Vce: 11.1 nF @ 25 V
Produkt ist nicht verfügbar
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FS75R12W2T7B11BOMA1 FS75R12W2T7B11BOMA1 Infineon Technologies FS75R12W2T7_B11_v2_0_Draft.pdf Description: IGBT MOD 1200V 75A
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Full Bridge
Operating Temperature: -40°C ~ 175°C
Vce(on) (Max) @ Vge, Ic: 1.55V @ 15V, 75A (Typ)
NTC Thermistor: No
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 65 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 13 µA
Input Capacitance (Cies) @ Vce: 15.1 nF @ 25 V
auf Bestellung 29 Stücke:
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1+85.76 EUR
15+62.71 EUR
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1EDN7550UXTSA1 1EDN7550UXTSA1 Infineon Technologies Infineon-1EDN7550U-DataSheet-v02_02-EN.pdf?fileId=5546d462700c0ae60170522057e14b61 Description: IC GATE DRVR HIGH-SIDE 6XFDFN
Packaging: Tape & Reel (TR)
Package / Case: 6-XFDFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 4.5V ~ 20V
Input Type: Non-Inverting
Supplier Device Package: PG-TSNP-6-13
Rise / Fall Time (Typ): 6.5ns, 4.5ns
Channel Type: Single
Driven Configuration: High-Side
Number of Drivers: 1
Gate Type: MOSFET (N-Channel, P-Channel)
Current - Peak Output (Source, Sink): 4A, 8A
Part Status: Active
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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KITACTBRD60R065S7TOBO1 KITACTBRD60R065S7TOBO1 Infineon Technologies Infineon-Evaluation_kit_KIT_ACT_BRD_60R065S7-ApplicationNotes-v01_00-EN.pdf?fileId=5546d462700c0ae60170875753771d45 Description: ACTIVE BRIDGE BOARD 60R065S7
Packaging: Box
Type: Power Management
Supplied Contents: Board(s)
Part Status: Active
Contents: Board(s)
auf Bestellung 4 Stücke:
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1+79.83 EUR
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EVAL2K4WACTBRDS7TOBO1 EVAL2K4WACTBRDS7TOBO1 Infineon Technologies Infineon-Evaluation_board_EVAL_2K4W_ACT_BRD_S7-ApplicationNotes-v01_00-EN.pdf?fileId=5546d462700c0ae601708c10a1fc1585 Description: EVAL_2K4W_ACT_BRD_S7
Packaging: Box
Type: Power Management
Supplied Contents: Board(s)
Part Status: Active
Contents: Board(s)
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1+823.05 EUR
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IR38060MBC01TRP IR38060MBC01TRP Infineon Technologies Infineon-IR38060M-DS-v03_84-EN.pdf?fileId=5546d4625c167129015c3291ea9a4cee Description: IC REG BUCK ADJ 6A 35PQFN
Packaging: Cut Tape (CT)
Package / Case: 35-PowerVQFN
Output Type: Adjustable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 6A
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Frequency - Switching: 400kHz ~ 1.5MHz
Voltage - Input (Max): 21V
Topology: Buck
Supplier Device Package: 35-PQFN (5x6)
Synchronous Rectifier: Yes
Voltage - Output (Max): 18.38V
Voltage - Input (Min): 1.2V
Voltage - Output (Min/Fixed): 0.5V
Part Status: Active
Produkt ist nicht verfügbar
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KIT40WAMPHATZWTOBO1 KIT40WAMPHATZWTOBO1 Infineon Technologies Infineon-KIT_40W_AMP_HAT_ZW-UserManual-v01_00-EN.pdf?fileId=5546d4626eab8fbf016eef8084096be6 Description: MERUS AUDIO AMP WIFI KIT
Packaging: Box
Function: Amplifier
Type: Audio
Contents: Board(s)
Utilized IC / Part: MA12070P
Platform: Raspberry Pi
Part Status: Obsolete
Produkt ist nicht verfügbar
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IPB180P04P4L02ATMA2 IPB180P04P4L02ATMA2 Infineon Technologies Infineon-IPB180P04P4L-02-DataSheet-v01_04-EN.pdf?fileId=5546d4627aa5d4f5017b784846aa726d Description: MOSFET P-CH 40V 180A TO263-7
Packaging: Tape & Reel (TR)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
Rds On (Max) @ Id, Vgs: 2.4mOhm @ 100A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 410µA
Supplier Device Package: PG-TO263-7-3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +5V, -16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 286 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 18700 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
1000+2.32 EUR
Mindestbestellmenge: 1000
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IPP120P04P4L03AKSA2 IPP120P04P4L03AKSA2 Infineon Technologies Infineon-IPP_B_I120P04P4L_03-DataSheet-v01_02-EN.pdf?fileId=db3a30432f69f146012f783b3b5a2e3f Description: MOSFET P-CH 40V 120A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 3.4mOhm @ 100A, 10V
Power Dissipation (Max): 136W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 340µA
Supplier Device Package: PG-TO220-3-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +5V, -16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 234 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 15000 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q100
auf Bestellung 181 Stücke:
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3+8.06 EUR
50+4.17 EUR
100+3.79 EUR
Mindestbestellmenge: 3
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TLF80511TFV50ATMA2 TLF80511TFV50ATMA2 Infineon Technologies Infineon-TLF80511TF-DS-v01_00-EN.pdf?fileId=5546d46259d9a4bf0159fa3199ac3f4b Description: IC REG LIN 5V 400MA TO252-3-11
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 400mA
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 75 µA
Voltage - Input (Max): 40V
Number of Regulators: 1
Supplier Device Package: PG-TO252-3-11
Voltage - Output (Min/Fixed): 5V
Part Status: Active
PSRR: 55dB (100Hz)
Voltage Dropout (Max): 0.5V @ 250mA
Protection Features: Over Current, Over Temperature, Short Circuit
Current - Supply (Max): 80 µA
Grade: Automotive
Qualification: AEC-Q100
auf Bestellung 1487 Stücke:
Lieferzeit 10-14 Tag (e)
9+2.15 EUR
12+1.56 EUR
25+1.42 EUR
100+1.25 EUR
250+1.18 EUR
500+1.13 EUR
1000+1.09 EUR
Mindestbestellmenge: 9
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TLF80511TCATMA2 TLF80511TCATMA2 Infineon Technologies Infineon-TLF80511TC-DS-v01_01-EN.pdf?fileId=5546d46259d9a4bf0159fa2857053f45 Description: IC REG LIN 5V 400MA PG-TO263-3-1
Packaging: Cut Tape (CT)
Package / Case: TO-263-4, D2PAK (3 Leads + Tab), TO-263AA
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 400mA
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 75 µA
Voltage - Input (Max): 40V
Number of Regulators: 1
Supplier Device Package: PG-TO263-3-1
Voltage - Output (Min/Fixed): 5V
PSRR: 55dB (100Hz)
Voltage Dropout (Max): 0.5V @ 250mA
Protection Features: Over Current, Over Temperature, Short Circuit
Current - Supply (Max): 80 µA
Grade: Automotive
Qualification: AEC-Q100
auf Bestellung 2569 Stücke:
Lieferzeit 10-14 Tag (e)
7+2.92 EUR
10+2.15 EUR
25+1.96 EUR
100+1.75 EUR
250+1.64 EUR
500+1.58 EUR
Mindestbestellmenge: 7
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TLF80511TFV33ATMA2 TLF80511TFV33ATMA2 Infineon Technologies Infineon-TLF80511TF-DS-v01_00-EN.pdf?fileId=5546d46259d9a4bf0159fa3199ac3f4b Description: IC REG LIN 3.3V 400MA TO252-3-11
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 400mA
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 75 µA
Voltage - Input (Max): 40V
Number of Regulators: 1
Supplier Device Package: PG-TO252-3-11
Voltage - Output (Min/Fixed): 3.3V
Grade: Automotive
PSRR: 55dB (100Hz)
Voltage Dropout (Max): 0.65V @ 250mA
Protection Features: Over Current, Over Temperature, Short Circuit
Current - Supply (Max): 80 µA
Qualification: AEC-Q100
auf Bestellung 5741 Stücke:
Lieferzeit 10-14 Tag (e)
8+2.48 EUR
10+1.81 EUR
25+1.64 EUR
100+1.46 EUR
250+1.37 EUR
500+1.32 EUR
1000+1.27 EUR
Mindestbestellmenge: 8
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SLB9670VQ20FW785XTMA1 SLB9670VQ20FW785XTMA1 Infineon Technologies Infineon-SLB%209670VQ2.0-DataSheet-v01_04-EN.pdf?fileId=5546d4626fc1ce0b016fc78270350cd6 Description: IC TPM VQFN
Packaging: Tape & Reel (TR)
Package / Case: 32-VFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: SPI
Operating Temperature: -20°C ~ 85°C (TA)
Voltage - Supply: 1.65V ~ 1.95V, 3V ~ 3.6V
Program Memory Type: NVM (6.8kB)
Applications: Trusted Platform Module (TPM)
Core Processor: 16-Bit
Supplier Device Package: PG-VQFN-32-13
Part Status: Active
Number of I/O: 1
DigiKey Programmable: Not Verified
auf Bestellung 5000 Stücke:
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5000+2.97 EUR
Mindestbestellmenge: 5000
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SLB9670VQ20FW785XTMA1 SLB9670VQ20FW785XTMA1 Infineon Technologies Infineon-SLB%209670VQ2.0-DataSheet-v01_04-EN.pdf?fileId=5546d4626fc1ce0b016fc78270350cd6 Description: IC TPM VQFN
Packaging: Cut Tape (CT)
Package / Case: 32-VFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: SPI
Operating Temperature: -20°C ~ 85°C (TA)
Voltage - Supply: 1.65V ~ 1.95V, 3V ~ 3.6V
Program Memory Type: NVM (6.8kB)
Applications: Trusted Platform Module (TPM)
Core Processor: 16-Bit
Supplier Device Package: PG-VQFN-32-13
Part Status: Active
Number of I/O: 1
DigiKey Programmable: Not Verified
auf Bestellung 6017 Stücke:
Lieferzeit 10-14 Tag (e)
4+5.61 EUR
10+4.23 EUR
25+3.89 EUR
100+3.51 EUR
250+3.32 EUR
500+3.21 EUR
1000+3.12 EUR
2500+3.03 EUR
Mindestbestellmenge: 4
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IPI80N07S4-05 IPI80N07S4-05 Infineon Technologies INFN-S-A0001304105-1.pdf?t.download=true&u=5oefqw Description: N-CHANNEL POWER MOSFET
Produkt ist nicht verfügbar
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BTS112AE3045ANTMA1 BTS112AE3045ANTMA1 Infineon Technologies INFNS05888-1.pdf?t.download=true&u=5oefqw Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 150Ohm @ 7.5A, 10V
Power Dissipation (Max): 40W
Vgs(th) (Max) @ Id: 3.5V @ 1mA
Supplier Device Package: D2PAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Input Capacitance (Ciss) (Max) @ Vds: 480 pF @ 25 V
Produkt ist nicht verfügbar
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BTS112A BTS112A Infineon Technologies INFNS25852-1.pdf?t.download=true&u=5oefqw Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Part Status: Obsolete
auf Bestellung 3397 Stücke:
Lieferzeit 10-14 Tag (e)
125+4.01 EUR
Mindestbestellmenge: 125
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IPP029N06NAK5A1 IPP029N06NAK5A1 Infineon Technologies INFN-S-A0001299198-1.pdf?t.download=true&u=5oefqw Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 2.9mOhm @ 100A, 10V
Power Dissipation (Max): 3W (Ta), 136W (Tc)
Vgs(th) (Max) @ Id: 2.8V @ 75µA
Supplier Device Package: PG-TO220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4100 pF @ 30 V
Produkt ist nicht verfügbar
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BTS117E3044A BTS117E3044A Infineon Technologies INFNS24307-1.pdf?t.download=true&u=5oefqw Description: AUTOMOTIVELOW-SIDE SWITCH
Packaging: Bulk
Features: Auto Restart, Slew Rate Controlled
Package / Case: TO-220-3
Output Type: N-Channel
Mounting Type: Through Hole
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Low Side
Rds On (Typ): 80mOhm
Input Type: Non-Inverting
Voltage - Load: 60V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 3.5A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-TO220-3-1
Fault Protection: Current Limiting (Fixed), Over Load, Over Temperature, Over Voltage, Short Circuit
Part Status: Obsolete
Produkt ist nicht verfügbar
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BTS133NKSA1 BTS133NKSA1 Infineon Technologies INFNS27929-1.pdf?t.download=true&u=5oefqw Description: BUFFER/INVERTER PERIPHL DRIVER
Packaging: Bulk
Features: Slew Rate Controlled
Package / Case: TO-220-3
Output Type: N-Channel
Mounting Type: Through Hole
Number of Outputs: 1
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Low Side
Rds On (Typ): 40mOhm
Input Type: Non-Inverting
Voltage - Load: 60V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 7A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-TO220-3-1
Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage, Short Circuit
Part Status: Active
Produkt ist nicht verfügbar
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BTS117E3045A BTS117E3045A Infineon Technologies INFNS24307-1.pdf?t.download=true&u=5oefqw Description: AUTOMOTIVELOW-SIDE SWITCH
Packaging: Bulk
Features: Auto Restart, Slew Rate Controlled
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Low Side
Rds On (Typ): 80mOhm
Input Type: Non-Inverting
Voltage - Load: 60V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 3.5A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-TO220-3-5
Fault Protection: Current Limiting (Fixed), Over Load, Over Temperature, Over Voltage, Short Circuit
Part Status: Obsolete
Produkt ist nicht verfügbar
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BTS133E3064 BTS133E3064 Infineon Technologies INFNS27929-1.pdf?t.download=true&u=5oefqw Description: AUTOMOTIVELOW-SIDE SWITCH
Packaging: Bulk
Features: Slew Rate Controlled
Package / Case: TO-220-3
Output Type: N-Channel
Mounting Type: Through Hole
Number of Outputs: 1
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Low Side
Rds On (Typ): 40mOhm
Input Type: Non-Inverting
Voltage - Load: 60V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 7A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-TO220-3-1
Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage, Short Circuit
Part Status: Active
Produkt ist nicht verfügbar
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BTS133E3064NK BTS133E3064NK Infineon Technologies INFNS27929-1.pdf?t.download=true&u=5oefqw Description: AUTOMOTIVELOW-SIDE SWITCH
Packaging: Bulk
Features: Slew Rate Controlled
Package / Case: TO-220-3
Output Type: N-Channel
Mounting Type: Through Hole
Number of Outputs: 1
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Low Side
Rds On (Typ): 40mOhm
Input Type: Non-Inverting
Voltage - Load: 60V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 7A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-TO220-3-1
Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage, Short Circuit
Part Status: Active
Produkt ist nicht verfügbar
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IPP085N06LGIN IPP085N06LGIN Infineon Technologies INFNS16297-1.pdf?t.download=true&u=5oefqw Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 8.5mOhm @ 80A, 10V
Power Dissipation (Max): 188W (Tc)
Vgs(th) (Max) @ Id: 2V @ 125µA
Supplier Device Package: PG-TO220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 104 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3500 pF @ 30 V
Produkt ist nicht verfügbar
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BTS441RS BTS441RS Infineon Technologies INFNS13887-1.pdf?t.download=true&u=5oefqw Description: BUFFER/INVERTER PERIPHL DRIVER
Packaging: Bulk
Part Status: Active
Produkt ist nicht verfügbar
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BTS441RSAKSA1 BTS441RSAKSA1 Infineon Technologies Description: BUFFER/INVERTER PERIPHL DRIVER
Packaging: Bulk
Part Status: Active
Produkt ist nicht verfügbar
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BTS426L1E3062ANTMA1 BTS426L1E3062ANTMA1 Infineon Technologies INFNS06055-1.pdf?t.download=true&u=5oefqw Description: AUTOMOTIVE HIGH SIDE SWITCH
Packaging: Bulk
Features: Auto Restart
Package / Case: TO-263-5, D²Pak (4 Leads + Tab), TO-263BB
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 50mOhm
Input Type: Non-Inverting
Voltage - Load: 5V ~ 34V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 5.8A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-TO263-5-2
Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, Over Voltage, UVLO
Part Status: Active
Produkt ist nicht verfügbar
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BTS5240G BTS5240G Infineon Technologies INFNS09491-1.pdf?t.download=true&u=5oefqw Description: BUFFER/INVERTER PERIPHL DRIVER
Packaging: Bulk
Part Status: Active
Produkt ist nicht verfügbar
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BBY53-05WE6327 BBY53-05WE6327 Infineon Technologies INFNS15715-1.pdf?t.download=true&u=5oefqw Description: VARIABLE CAPACITANCE DIODE
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BCV26E6327 BCV26E6327 Infineon Technologies INFNS10750-1.pdf?t.download=true&u=5oefqw Description: TRANS PNP DARL 30V 0.5A SOT23
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Darlington
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 100µA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 20000 @ 100mA, 5V
Frequency - Transition: 200MHz
Supplier Device Package: PG-SOT23
Part Status: Active
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 360 mW
Produkt ist nicht verfügbar
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BBY57-02VH6327 BBY57-02VH6327 Infineon Technologies INFNS11659-1.pdf?t.download=true&u=5oefqw Description: VARIABLE CAPACITANCE DIODE
Packaging: Bulk
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Diode Type: Single
Operating Temperature: -55°C ~ 125°C
Capacitance @ Vr, F: 5.5pF @ 4V, 1MHz
Capacitance Ratio Condition: C1/C4
Supplier Device Package: PG-SC79-2-1
Part Status: Active
Voltage - Peak Reverse (Max): 10 V
Capacitance Ratio: 3.7
Produkt ist nicht verfügbar
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BCW 60C E6327 Infineon Technologies INFNS11039-1.pdf?t.download=true&u=5oefqw Description: TRANS NPN 32V 0.1A SOT23
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 550mV @ 1.25mA, 50mA
Current - Collector Cutoff (Max): 20nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 2mA, 5V
Frequency - Transition: 250MHz
Supplier Device Package: PG-SOT23
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 32 V
Power - Max: 330 mW
auf Bestellung 30000 Stücke:
Lieferzeit 10-14 Tag (e)
7397+0.07 EUR
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IPP50CN10NGHKSA1 IPP50CN10NGHKSA1 Infineon Technologies INFNS17017-1.pdf?t.download=true&u=5oefqw Description: N-CHANNEL POWER MOSFET
auf Bestellung 7500 Stücke:
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BCV61CE6327 Infineon Technologies Description: TRANSISTORS FOR CURRENT MIRROR
Packaging: Bulk
Voltage - Rated: 30V
Package / Case: TO-253-4, TO-253AA
Current Rating (Amps): 100mA
Mounting Type: Surface Mount
Transistor Type: 2 NPN, Base Collector Junction
Applications: Current Mirror
Supplier Device Package: PG-SOT143-4
Produkt ist nicht verfügbar
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IPP50R299CP IPP50R299CP Infineon Technologies INFNS17021-1.pdf?t.download=true&u=5oefqw Description: N-CHANNEL POWER MOSFET
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IFS150B12N3T4_B31 Infineon Technologies INFNS22339-1.pdf?t.download=true&u=5oefqw Description: IGBT, 150A, 1200V, N-CHANNEL
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IPP50R199CPXK IPP50R199CPXK Infineon Technologies INFNS17019-1.pdf?t.download=true&u=5oefqw Description: N-CHANNEL POWER MOSFET
auf Bestellung 217 Stücke:
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BTS7710G BTS7710G Infineon Technologies INFNS13122-1.pdf?t.download=true&u=5oefqw Description: IC HALF BRIDGE DRIVER 8A PDSO28
Packaging: Bulk
Features: Slew Rate Controlled, Status Flag
Package / Case: 28-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Interface: Logic
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge (2)
Voltage - Supply: 1.8V ~ 42V
Rds On (Typ): 40mOhm LS, 70mOhm HS
Applications: DC Motors, General Purpose
Current - Output / Channel: 8A
Current - Peak Output: 15A
Technology: DMOS
Voltage - Load: 1.8V ~ 42V
Supplier Device Package: P-DSO-28
Fault Protection: Current Limiting, ESD, Open Load Detect, Over Temperature, Short Circuit, UVLO
Load Type: Inductive
Part Status: Active
Produkt ist nicht verfügbar
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BCV62CE6327 BCV62CE6327 Infineon Technologies INFNS10850-1.pdf?t.download=true&u=5oefqw Description: TRANSISTORS FOR CURRENT MIRROR
auf Bestellung 4629 Stücke:
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3480+0.15 EUR
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BCV26E327 BCV26E327 Infineon Technologies INFNS10750-1.pdf?t.download=true&u=5oefqw Description: TRANS PNP DARL 30V 0.5A SOT23
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Darlington
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 100µA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 20000 @ 100mA, 5V
Frequency - Transition: 200MHz
Supplier Device Package: PG-SOT23
Part Status: Active
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 360 mW
Produkt ist nicht verfügbar
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BBY5305WE6327 BBY5305WE6327 Infineon Technologies INFNS15715-1.pdf?t.download=true&u=5oefqw Description: VARIABLE CAPACITANCE DIODE
Packaging: Bulk
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Diode Type: 1 Pair Common Cathode
Operating Temperature: -55°C ~ 125°C (TJ)
Capacitance @ Vr, F: 3.1pF @ 3V, 1MHz
Capacitance Ratio Condition: C1/C3
Supplier Device Package: SOT-323
Voltage - Peak Reverse (Max): 6 V
Capacitance Ratio: 2.6
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2308+0.20 EUR
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BBY53-02VH6327 BBY53-02VH6327 Infineon Technologies INFNS15715-1.pdf?t.download=true&u=5oefqw Description: VARIABLE CAPACITANCE DIODE
Packaging: Bulk
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Diode Type: Single
Operating Temperature: -55°C ~ 125°C
Capacitance @ Vr, F: 3.1pF @ 3V, 1MHz
Capacitance Ratio Condition: C1/C3
Supplier Device Package: PG-SC79-2
Part Status: Active
Voltage - Peak Reverse (Max): 6 V
Capacitance Ratio: 2.2
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2325+0.23 EUR
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BTS724NTMA1 Infineon Technologies Description: AUTOMOTIVE HIGH SIDE SWITCH
Packaging: Bulk
Part Status: Active
Produkt ist nicht verfügbar
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BBY53-05WH6327 BBY53-05WH6327 Infineon Technologies INFNS15715-1.pdf?t.download=true&u=5oefqw Description: VARIABLE CAPACITANCE DIODE
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BC 849B E6327 BC 849B E6327 Infineon Technologies INFNS14907-1.pdf?t.download=true&u=5oefqw Description: BIPOLAR GEN PURPOSE TRANSISTOR
auf Bestellung 27000 Stücke:
Lieferzeit 10-14 Tag (e)
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IPP260N06N3G IPP260N06N3G Infineon Technologies INFNS16348-1.pdf?t.download=true&u=5oefqw Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 27A (Tc)
Rds On (Max) @ Id, Vgs: 25.7mOhm @ 27A, 10V
Power Dissipation (Max): 36W (Tc)
Vgs(th) (Max) @ Id: 4V @ 11µA
Supplier Device Package: PG-TO220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 30 V
Produkt ist nicht verfügbar
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IPP60R520E6 IPP60R520E6 Infineon Technologies INFN-S-A0001300235-1.pdf?t.download=true&u=5oefqw Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.1A (Tc)
Rds On (Max) @ Id, Vgs: 520mOhm @ 2.8A, 10V
Power Dissipation (Max): 66W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 230µA
Supplier Device Package: PG-TO220-3-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 23.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 512 pF @ 100 V
Produkt ist nicht verfügbar
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BC 858CE6327 BC 858CE6327 Infineon Technologies INFNS16508-1.pdf?t.download=true&u=5oefqw Description: TRANS PNP 30V 0.1A SOT23
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V
Frequency - Transition: 250MHz
Supplier Device Package: PG-SOT23
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 330 mW
auf Bestellung 30000 Stücke:
Lieferzeit 10-14 Tag (e)
8460+0.07 EUR
Mindestbestellmenge: 8460
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BCW60BE6327 BCW60BE6327 Infineon Technologies INFNS11039-1.pdf?t.download=true&u=5oefqw Description: TRANS NPN 32V 0.1A SOT23
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 550mV @ 1.25mA, 50mA
Current - Collector Cutoff (Max): 20nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 2mA, 5V
Frequency - Transition: 250MHz
Supplier Device Package: PG-SOT23
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 32 V
Power - Max: 330 mW
Produkt ist nicht verfügbar
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IPP60R600P7 IPP60R600P7 Infineon Technologies INFN-S-A0006145432-1.pdf?t.download=true&u=5oefqw Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Part Status: Active
auf Bestellung 500 Stücke:
Lieferzeit 10-14 Tag (e)
367+1.44 EUR
Mindestbestellmenge: 367
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BC 848B E6327 BC 848B E6327 Infineon Technologies INFNS14907-1.pdf?t.download=true&u=5oefqw Description: BIPOLAR GEN PURPOSE TRANSISTOR
auf Bestellung 30000 Stücke:
Lieferzeit 10-14 Tag (e)
11269+0.05 EUR
Mindestbestellmenge: 11269
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BTS612N1E3128ANTMA1 BTS612N1E3128ANTMA1 Infineon Technologies INFNS05460-1.pdf?t.download=true&u=5oefqw Description: BUFFER/INVERTER PERIPHL DRIVER
Packaging: Bulk
Features: Auto Restart, Slew Rate Controlled
Package / Case: TO-263-7, D²Pak (6 Leads + Tab)
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 2
Interface: Parallel
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 160mOhm
Input Type: Non-Inverting
Voltage - Load: 5V ~ 34V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 3.5A
Ratio - Input:Output: 1:1
Supplier Device Package: P-TO263-7-2
Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, Over Voltage, UVLO
Part Status: Active
Produkt ist nicht verfügbar
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BCV61BE6327 BCV61BE6327 Infineon Technologies INFNS17209-1.pdf?t.download=true&u=5oefqw Description: TRANSISTORS FOR CURRENT MIRROR
Packaging: Bulk
Voltage - Rated: 30V
Package / Case: TO-253-4, TO-253AA
Current Rating (Amps): 100mA
Mounting Type: Surface Mount
Transistor Type: 2 NPN, Base Collector Junction
Applications: Current Mirror
Supplier Device Package: PG-SOT-143-3D
Part Status: Active
Produkt ist nicht verfügbar
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IPP60R190C3 IPP60R190C3 Infineon Technologies Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Part Status: Active
Produkt ist nicht verfügbar
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IPP60R520C6 IPP60R520C6 Infineon Technologies INFN-S-A0001300323-1.pdf?t.download=true&u=5oefqw Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.1A (Tc)
Rds On (Max) @ Id, Vgs: 520mOhm @ 2.8A, 10V
Power Dissipation (Max): 29W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 230µA
Supplier Device Package: PG-TO220-3-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 23.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 512 pF @ 100 V
Produkt ist nicht verfügbar
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BC 858C E6327 Infineon Technologies INFNS16508-1.pdf?t.download=true&u=5oefqw Description: TRANS PNP 30V 0.1A SOT23
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V
Frequency - Transition: 250MHz
Supplier Device Package: PG-SOT23
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 330 mW
auf Bestellung 9000 Stücke:
Lieferzeit 10-14 Tag (e)
9000+0.07 EUR
Mindestbestellmenge: 9000
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BCW 61C E6327 BCW 61C E6327 Infineon Technologies INFNS11623-1.pdf?t.download=true&u=5oefqw Description: TRANS PNP 32V 0.1A SOT23
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 550mV @ 1.25mA, 50mA
Current - Collector Cutoff (Max): 20nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 2mA, 5V
Frequency - Transition: 250MHz
Supplier Device Package: PG-SOT23
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 32 V
Power - Max: 330 mW
Produkt ist nicht verfügbar
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BC 850B E6327 BC 850B E6327 Infineon Technologies INFNS14907-1.pdf?t.download=true&u=5oefqw Description: TRANS NPN 45V 0.1A SOT23
auf Bestellung 36000 Stücke:
Lieferzeit 10-14 Tag (e)
7397+0.06 EUR
Mindestbestellmenge: 7397
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IPP60R600CP IPP60R600CP Infineon Technologies INFNS17027-1.pdf?t.download=true&u=5oefqw Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.1A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 3.3A, 10V
Power Dissipation (Max): 60W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 220µA
Supplier Device Package: PG-TO220-3-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 550 pF @ 100 V
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
433+1.16 EUR
Mindestbestellmenge: 433
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IPP60R520CP IPP60R520CP Infineon Technologies INFNS17026-1.pdf?t.download=true&u=5oefqw Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.8A (Tc)
Rds On (Max) @ Id, Vgs: 520mOhm @ 3.8A, 10V
Power Dissipation (Max): 66W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: PG-TO220-3-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 630 pF @ 100 V
auf Bestellung 500 Stücke:
Lieferzeit 10-14 Tag (e)
500+1.33 EUR
Mindestbestellmenge: 500
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FS50R12W2T7B11BOMA1 FS50R12W2T7_B11_V2.0_12-13-19.pdf
FS50R12W2T7B11BOMA1
Hersteller: Infineon Technologies
Description: IGBT MOD 1200V 50A
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Full Bridge
Operating Temperature: -40°C ~ 175°C
Vce(on) (Max) @ Vge, Ic: 1.5V @ 15V, 50A (Typ)
NTC Thermistor: No
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 50 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 7.9 µA
Input Capacitance (Cies) @ Vce: 11.1 nF @ 25 V
Produkt ist nicht verfügbar
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FS75R12W2T7B11BOMA1 FS75R12W2T7_B11_v2_0_Draft.pdf
FS75R12W2T7B11BOMA1
Hersteller: Infineon Technologies
Description: IGBT MOD 1200V 75A
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Full Bridge
Operating Temperature: -40°C ~ 175°C
Vce(on) (Max) @ Vge, Ic: 1.55V @ 15V, 75A (Typ)
NTC Thermistor: No
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 65 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 13 µA
Input Capacitance (Cies) @ Vce: 15.1 nF @ 25 V
auf Bestellung 29 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+85.76 EUR
15+62.71 EUR
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1EDN7550UXTSA1 Infineon-1EDN7550U-DataSheet-v02_02-EN.pdf?fileId=5546d462700c0ae60170522057e14b61
1EDN7550UXTSA1
Hersteller: Infineon Technologies
Description: IC GATE DRVR HIGH-SIDE 6XFDFN
Packaging: Tape & Reel (TR)
Package / Case: 6-XFDFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 4.5V ~ 20V
Input Type: Non-Inverting
Supplier Device Package: PG-TSNP-6-13
Rise / Fall Time (Typ): 6.5ns, 4.5ns
Channel Type: Single
Driven Configuration: High-Side
Number of Drivers: 1
Gate Type: MOSFET (N-Channel, P-Channel)
Current - Peak Output (Source, Sink): 4A, 8A
Part Status: Active
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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KITACTBRD60R065S7TOBO1 Infineon-Evaluation_kit_KIT_ACT_BRD_60R065S7-ApplicationNotes-v01_00-EN.pdf?fileId=5546d462700c0ae60170875753771d45
KITACTBRD60R065S7TOBO1
Hersteller: Infineon Technologies
Description: ACTIVE BRIDGE BOARD 60R065S7
Packaging: Box
Type: Power Management
Supplied Contents: Board(s)
Part Status: Active
Contents: Board(s)
auf Bestellung 4 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+79.83 EUR
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EVAL2K4WACTBRDS7TOBO1 Infineon-Evaluation_board_EVAL_2K4W_ACT_BRD_S7-ApplicationNotes-v01_00-EN.pdf?fileId=5546d462700c0ae601708c10a1fc1585
EVAL2K4WACTBRDS7TOBO1
Hersteller: Infineon Technologies
Description: EVAL_2K4W_ACT_BRD_S7
Packaging: Box
Type: Power Management
Supplied Contents: Board(s)
Part Status: Active
Contents: Board(s)
auf Bestellung 5 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+823.05 EUR
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IR38060MBC01TRP Infineon-IR38060M-DS-v03_84-EN.pdf?fileId=5546d4625c167129015c3291ea9a4cee
IR38060MBC01TRP
Hersteller: Infineon Technologies
Description: IC REG BUCK ADJ 6A 35PQFN
Packaging: Cut Tape (CT)
Package / Case: 35-PowerVQFN
Output Type: Adjustable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 6A
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Frequency - Switching: 400kHz ~ 1.5MHz
Voltage - Input (Max): 21V
Topology: Buck
Supplier Device Package: 35-PQFN (5x6)
Synchronous Rectifier: Yes
Voltage - Output (Max): 18.38V
Voltage - Input (Min): 1.2V
Voltage - Output (Min/Fixed): 0.5V
Part Status: Active
Produkt ist nicht verfügbar
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KIT40WAMPHATZWTOBO1 Infineon-KIT_40W_AMP_HAT_ZW-UserManual-v01_00-EN.pdf?fileId=5546d4626eab8fbf016eef8084096be6
KIT40WAMPHATZWTOBO1
Hersteller: Infineon Technologies
Description: MERUS AUDIO AMP WIFI KIT
Packaging: Box
Function: Amplifier
Type: Audio
Contents: Board(s)
Utilized IC / Part: MA12070P
Platform: Raspberry Pi
Part Status: Obsolete
Produkt ist nicht verfügbar
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IPB180P04P4L02ATMA2 Infineon-IPB180P04P4L-02-DataSheet-v01_04-EN.pdf?fileId=5546d4627aa5d4f5017b784846aa726d
IPB180P04P4L02ATMA2
Hersteller: Infineon Technologies
Description: MOSFET P-CH 40V 180A TO263-7
Packaging: Tape & Reel (TR)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
Rds On (Max) @ Id, Vgs: 2.4mOhm @ 100A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 410µA
Supplier Device Package: PG-TO263-7-3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +5V, -16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 286 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 18700 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1000+2.32 EUR
Mindestbestellmenge: 1000
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IPP120P04P4L03AKSA2 Infineon-IPP_B_I120P04P4L_03-DataSheet-v01_02-EN.pdf?fileId=db3a30432f69f146012f783b3b5a2e3f
IPP120P04P4L03AKSA2
Hersteller: Infineon Technologies
Description: MOSFET P-CH 40V 120A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 3.4mOhm @ 100A, 10V
Power Dissipation (Max): 136W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 340µA
Supplier Device Package: PG-TO220-3-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +5V, -16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 234 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 15000 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q100
auf Bestellung 181 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+8.06 EUR
50+4.17 EUR
100+3.79 EUR
Mindestbestellmenge: 3
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TLF80511TFV50ATMA2 Infineon-TLF80511TF-DS-v01_00-EN.pdf?fileId=5546d46259d9a4bf0159fa3199ac3f4b
TLF80511TFV50ATMA2
Hersteller: Infineon Technologies
Description: IC REG LIN 5V 400MA TO252-3-11
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 400mA
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 75 µA
Voltage - Input (Max): 40V
Number of Regulators: 1
Supplier Device Package: PG-TO252-3-11
Voltage - Output (Min/Fixed): 5V
Part Status: Active
PSRR: 55dB (100Hz)
Voltage Dropout (Max): 0.5V @ 250mA
Protection Features: Over Current, Over Temperature, Short Circuit
Current - Supply (Max): 80 µA
Grade: Automotive
Qualification: AEC-Q100
auf Bestellung 1487 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
9+2.15 EUR
12+1.56 EUR
25+1.42 EUR
100+1.25 EUR
250+1.18 EUR
500+1.13 EUR
1000+1.09 EUR
Mindestbestellmenge: 9
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TLF80511TCATMA2 Infineon-TLF80511TC-DS-v01_01-EN.pdf?fileId=5546d46259d9a4bf0159fa2857053f45
TLF80511TCATMA2
Hersteller: Infineon Technologies
Description: IC REG LIN 5V 400MA PG-TO263-3-1
Packaging: Cut Tape (CT)
Package / Case: TO-263-4, D2PAK (3 Leads + Tab), TO-263AA
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 400mA
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 75 µA
Voltage - Input (Max): 40V
Number of Regulators: 1
Supplier Device Package: PG-TO263-3-1
Voltage - Output (Min/Fixed): 5V
PSRR: 55dB (100Hz)
Voltage Dropout (Max): 0.5V @ 250mA
Protection Features: Over Current, Over Temperature, Short Circuit
Current - Supply (Max): 80 µA
Grade: Automotive
Qualification: AEC-Q100
auf Bestellung 2569 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
7+2.92 EUR
10+2.15 EUR
25+1.96 EUR
100+1.75 EUR
250+1.64 EUR
500+1.58 EUR
Mindestbestellmenge: 7
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TLF80511TFV33ATMA2 Infineon-TLF80511TF-DS-v01_00-EN.pdf?fileId=5546d46259d9a4bf0159fa3199ac3f4b
TLF80511TFV33ATMA2
Hersteller: Infineon Technologies
Description: IC REG LIN 3.3V 400MA TO252-3-11
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 400mA
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 75 µA
Voltage - Input (Max): 40V
Number of Regulators: 1
Supplier Device Package: PG-TO252-3-11
Voltage - Output (Min/Fixed): 3.3V
Grade: Automotive
PSRR: 55dB (100Hz)
Voltage Dropout (Max): 0.65V @ 250mA
Protection Features: Over Current, Over Temperature, Short Circuit
Current - Supply (Max): 80 µA
Qualification: AEC-Q100
auf Bestellung 5741 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
8+2.48 EUR
10+1.81 EUR
25+1.64 EUR
100+1.46 EUR
250+1.37 EUR
500+1.32 EUR
1000+1.27 EUR
Mindestbestellmenge: 8
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SLB9670VQ20FW785XTMA1 Infineon-SLB%209670VQ2.0-DataSheet-v01_04-EN.pdf?fileId=5546d4626fc1ce0b016fc78270350cd6
SLB9670VQ20FW785XTMA1
Hersteller: Infineon Technologies
Description: IC TPM VQFN
Packaging: Tape & Reel (TR)
Package / Case: 32-VFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: SPI
Operating Temperature: -20°C ~ 85°C (TA)
Voltage - Supply: 1.65V ~ 1.95V, 3V ~ 3.6V
Program Memory Type: NVM (6.8kB)
Applications: Trusted Platform Module (TPM)
Core Processor: 16-Bit
Supplier Device Package: PG-VQFN-32-13
Part Status: Active
Number of I/O: 1
DigiKey Programmable: Not Verified
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5000+2.97 EUR
Mindestbestellmenge: 5000
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SLB9670VQ20FW785XTMA1 Infineon-SLB%209670VQ2.0-DataSheet-v01_04-EN.pdf?fileId=5546d4626fc1ce0b016fc78270350cd6
SLB9670VQ20FW785XTMA1
Hersteller: Infineon Technologies
Description: IC TPM VQFN
Packaging: Cut Tape (CT)
Package / Case: 32-VFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: SPI
Operating Temperature: -20°C ~ 85°C (TA)
Voltage - Supply: 1.65V ~ 1.95V, 3V ~ 3.6V
Program Memory Type: NVM (6.8kB)
Applications: Trusted Platform Module (TPM)
Core Processor: 16-Bit
Supplier Device Package: PG-VQFN-32-13
Part Status: Active
Number of I/O: 1
DigiKey Programmable: Not Verified
auf Bestellung 6017 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+5.61 EUR
10+4.23 EUR
25+3.89 EUR
100+3.51 EUR
250+3.32 EUR
500+3.21 EUR
1000+3.12 EUR
2500+3.03 EUR
Mindestbestellmenge: 4
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IPI80N07S4-05 INFN-S-A0001304105-1.pdf?t.download=true&u=5oefqw
IPI80N07S4-05
Hersteller: Infineon Technologies
Description: N-CHANNEL POWER MOSFET
Produkt ist nicht verfügbar
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BTS112AE3045ANTMA1 INFNS05888-1.pdf?t.download=true&u=5oefqw
BTS112AE3045ANTMA1
Hersteller: Infineon Technologies
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 150Ohm @ 7.5A, 10V
Power Dissipation (Max): 40W
Vgs(th) (Max) @ Id: 3.5V @ 1mA
Supplier Device Package: D2PAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Input Capacitance (Ciss) (Max) @ Vds: 480 pF @ 25 V
Produkt ist nicht verfügbar
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BTS112A INFNS25852-1.pdf?t.download=true&u=5oefqw
BTS112A
Hersteller: Infineon Technologies
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Part Status: Obsolete
auf Bestellung 3397 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
125+4.01 EUR
Mindestbestellmenge: 125
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IPP029N06NAK5A1 INFN-S-A0001299198-1.pdf?t.download=true&u=5oefqw
IPP029N06NAK5A1
Hersteller: Infineon Technologies
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 2.9mOhm @ 100A, 10V
Power Dissipation (Max): 3W (Ta), 136W (Tc)
Vgs(th) (Max) @ Id: 2.8V @ 75µA
Supplier Device Package: PG-TO220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4100 pF @ 30 V
Produkt ist nicht verfügbar
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BTS117E3044A INFNS24307-1.pdf?t.download=true&u=5oefqw
BTS117E3044A
Hersteller: Infineon Technologies
Description: AUTOMOTIVELOW-SIDE SWITCH
Packaging: Bulk
Features: Auto Restart, Slew Rate Controlled
Package / Case: TO-220-3
Output Type: N-Channel
Mounting Type: Through Hole
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Low Side
Rds On (Typ): 80mOhm
Input Type: Non-Inverting
Voltage - Load: 60V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 3.5A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-TO220-3-1
Fault Protection: Current Limiting (Fixed), Over Load, Over Temperature, Over Voltage, Short Circuit
Part Status: Obsolete
Produkt ist nicht verfügbar
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BTS133NKSA1 INFNS27929-1.pdf?t.download=true&u=5oefqw
BTS133NKSA1
Hersteller: Infineon Technologies
Description: BUFFER/INVERTER PERIPHL DRIVER
Packaging: Bulk
Features: Slew Rate Controlled
Package / Case: TO-220-3
Output Type: N-Channel
Mounting Type: Through Hole
Number of Outputs: 1
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Low Side
Rds On (Typ): 40mOhm
Input Type: Non-Inverting
Voltage - Load: 60V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 7A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-TO220-3-1
Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage, Short Circuit
Part Status: Active
Produkt ist nicht verfügbar
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BTS117E3045A INFNS24307-1.pdf?t.download=true&u=5oefqw
BTS117E3045A
Hersteller: Infineon Technologies
Description: AUTOMOTIVELOW-SIDE SWITCH
Packaging: Bulk
Features: Auto Restart, Slew Rate Controlled
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Low Side
Rds On (Typ): 80mOhm
Input Type: Non-Inverting
Voltage - Load: 60V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 3.5A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-TO220-3-5
Fault Protection: Current Limiting (Fixed), Over Load, Over Temperature, Over Voltage, Short Circuit
Part Status: Obsolete
Produkt ist nicht verfügbar
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BTS133E3064 INFNS27929-1.pdf?t.download=true&u=5oefqw
BTS133E3064
Hersteller: Infineon Technologies
Description: AUTOMOTIVELOW-SIDE SWITCH
Packaging: Bulk
Features: Slew Rate Controlled
Package / Case: TO-220-3
Output Type: N-Channel
Mounting Type: Through Hole
Number of Outputs: 1
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Low Side
Rds On (Typ): 40mOhm
Input Type: Non-Inverting
Voltage - Load: 60V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 7A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-TO220-3-1
Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage, Short Circuit
Part Status: Active
Produkt ist nicht verfügbar
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BTS133E3064NK INFNS27929-1.pdf?t.download=true&u=5oefqw
BTS133E3064NK
Hersteller: Infineon Technologies
Description: AUTOMOTIVELOW-SIDE SWITCH
Packaging: Bulk
Features: Slew Rate Controlled
Package / Case: TO-220-3
Output Type: N-Channel
Mounting Type: Through Hole
Number of Outputs: 1
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Low Side
Rds On (Typ): 40mOhm
Input Type: Non-Inverting
Voltage - Load: 60V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 7A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-TO220-3-1
Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage, Short Circuit
Part Status: Active
Produkt ist nicht verfügbar
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IPP085N06LGIN INFNS16297-1.pdf?t.download=true&u=5oefqw
IPP085N06LGIN
Hersteller: Infineon Technologies
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 8.5mOhm @ 80A, 10V
Power Dissipation (Max): 188W (Tc)
Vgs(th) (Max) @ Id: 2V @ 125µA
Supplier Device Package: PG-TO220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 104 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3500 pF @ 30 V
Produkt ist nicht verfügbar
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BTS441RS INFNS13887-1.pdf?t.download=true&u=5oefqw
BTS441RS
Hersteller: Infineon Technologies
Description: BUFFER/INVERTER PERIPHL DRIVER
Packaging: Bulk
Part Status: Active
Produkt ist nicht verfügbar
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BTS441RSAKSA1
BTS441RSAKSA1
Hersteller: Infineon Technologies
Description: BUFFER/INVERTER PERIPHL DRIVER
Packaging: Bulk
Part Status: Active
Produkt ist nicht verfügbar
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BTS426L1E3062ANTMA1 INFNS06055-1.pdf?t.download=true&u=5oefqw
BTS426L1E3062ANTMA1
Hersteller: Infineon Technologies
Description: AUTOMOTIVE HIGH SIDE SWITCH
Packaging: Bulk
Features: Auto Restart
Package / Case: TO-263-5, D²Pak (4 Leads + Tab), TO-263BB
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 50mOhm
Input Type: Non-Inverting
Voltage - Load: 5V ~ 34V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 5.8A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-TO263-5-2
Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, Over Voltage, UVLO
Part Status: Active
Produkt ist nicht verfügbar
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BTS5240G INFNS09491-1.pdf?t.download=true&u=5oefqw
BTS5240G
Hersteller: Infineon Technologies
Description: BUFFER/INVERTER PERIPHL DRIVER
Packaging: Bulk
Part Status: Active
Produkt ist nicht verfügbar
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BBY53-05WE6327 INFNS15715-1.pdf?t.download=true&u=5oefqw
BBY53-05WE6327
Hersteller: Infineon Technologies
Description: VARIABLE CAPACITANCE DIODE
Produkt ist nicht verfügbar
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BCV26E6327 INFNS10750-1.pdf?t.download=true&u=5oefqw
BCV26E6327
Hersteller: Infineon Technologies
Description: TRANS PNP DARL 30V 0.5A SOT23
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Darlington
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 100µA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 20000 @ 100mA, 5V
Frequency - Transition: 200MHz
Supplier Device Package: PG-SOT23
Part Status: Active
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 360 mW
Produkt ist nicht verfügbar
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BBY57-02VH6327 INFNS11659-1.pdf?t.download=true&u=5oefqw
BBY57-02VH6327
Hersteller: Infineon Technologies
Description: VARIABLE CAPACITANCE DIODE
Packaging: Bulk
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Diode Type: Single
Operating Temperature: -55°C ~ 125°C
Capacitance @ Vr, F: 5.5pF @ 4V, 1MHz
Capacitance Ratio Condition: C1/C4
Supplier Device Package: PG-SC79-2-1
Part Status: Active
Voltage - Peak Reverse (Max): 10 V
Capacitance Ratio: 3.7
Produkt ist nicht verfügbar
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BCW 60C E6327 INFNS11039-1.pdf?t.download=true&u=5oefqw
Hersteller: Infineon Technologies
Description: TRANS NPN 32V 0.1A SOT23
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 550mV @ 1.25mA, 50mA
Current - Collector Cutoff (Max): 20nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 2mA, 5V
Frequency - Transition: 250MHz
Supplier Device Package: PG-SOT23
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 32 V
Power - Max: 330 mW
auf Bestellung 30000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
7397+0.07 EUR
Mindestbestellmenge: 7397
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IPP50CN10NGHKSA1 INFNS17017-1.pdf?t.download=true&u=5oefqw
IPP50CN10NGHKSA1
Hersteller: Infineon Technologies
Description: N-CHANNEL POWER MOSFET
auf Bestellung 7500 Stücke:
Lieferzeit 10-14 Tag (e)
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BCV61CE6327
Hersteller: Infineon Technologies
Description: TRANSISTORS FOR CURRENT MIRROR
Packaging: Bulk
Voltage - Rated: 30V
Package / Case: TO-253-4, TO-253AA
Current Rating (Amps): 100mA
Mounting Type: Surface Mount
Transistor Type: 2 NPN, Base Collector Junction
Applications: Current Mirror
Supplier Device Package: PG-SOT143-4
Produkt ist nicht verfügbar
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IPP50R299CP INFNS17021-1.pdf?t.download=true&u=5oefqw
IPP50R299CP
Hersteller: Infineon Technologies
Description: N-CHANNEL POWER MOSFET
Produkt ist nicht verfügbar
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IFS150B12N3T4_B31 INFNS22339-1.pdf?t.download=true&u=5oefqw
Hersteller: Infineon Technologies
Description: IGBT, 150A, 1200V, N-CHANNEL
Produkt ist nicht verfügbar
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IPP50R199CPXK INFNS17019-1.pdf?t.download=true&u=5oefqw
IPP50R199CPXK
Hersteller: Infineon Technologies
Description: N-CHANNEL POWER MOSFET
auf Bestellung 217 Stücke:
Lieferzeit 10-14 Tag (e)
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BTS7710G INFNS13122-1.pdf?t.download=true&u=5oefqw
BTS7710G
Hersteller: Infineon Technologies
Description: IC HALF BRIDGE DRIVER 8A PDSO28
Packaging: Bulk
Features: Slew Rate Controlled, Status Flag
Package / Case: 28-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Interface: Logic
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge (2)
Voltage - Supply: 1.8V ~ 42V
Rds On (Typ): 40mOhm LS, 70mOhm HS
Applications: DC Motors, General Purpose
Current - Output / Channel: 8A
Current - Peak Output: 15A
Technology: DMOS
Voltage - Load: 1.8V ~ 42V
Supplier Device Package: P-DSO-28
Fault Protection: Current Limiting, ESD, Open Load Detect, Over Temperature, Short Circuit, UVLO
Load Type: Inductive
Part Status: Active
Produkt ist nicht verfügbar
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BCV62CE6327 INFNS10850-1.pdf?t.download=true&u=5oefqw
BCV62CE6327
Hersteller: Infineon Technologies
Description: TRANSISTORS FOR CURRENT MIRROR
auf Bestellung 4629 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3480+0.15 EUR
Mindestbestellmenge: 3480
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BCV26E327 INFNS10750-1.pdf?t.download=true&u=5oefqw
BCV26E327
Hersteller: Infineon Technologies
Description: TRANS PNP DARL 30V 0.5A SOT23
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Darlington
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 100µA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 20000 @ 100mA, 5V
Frequency - Transition: 200MHz
Supplier Device Package: PG-SOT23
Part Status: Active
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 360 mW
Produkt ist nicht verfügbar
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BBY5305WE6327 INFNS15715-1.pdf?t.download=true&u=5oefqw
BBY5305WE6327
Hersteller: Infineon Technologies
Description: VARIABLE CAPACITANCE DIODE
Packaging: Bulk
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Diode Type: 1 Pair Common Cathode
Operating Temperature: -55°C ~ 125°C (TJ)
Capacitance @ Vr, F: 3.1pF @ 3V, 1MHz
Capacitance Ratio Condition: C1/C3
Supplier Device Package: SOT-323
Voltage - Peak Reverse (Max): 6 V
Capacitance Ratio: 2.6
auf Bestellung 6719 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2308+0.20 EUR
Mindestbestellmenge: 2308
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BBY53-02VH6327 INFNS15715-1.pdf?t.download=true&u=5oefqw
BBY53-02VH6327
Hersteller: Infineon Technologies
Description: VARIABLE CAPACITANCE DIODE
Packaging: Bulk
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Diode Type: Single
Operating Temperature: -55°C ~ 125°C
Capacitance @ Vr, F: 3.1pF @ 3V, 1MHz
Capacitance Ratio Condition: C1/C3
Supplier Device Package: PG-SC79-2
Part Status: Active
Voltage - Peak Reverse (Max): 6 V
Capacitance Ratio: 2.2
auf Bestellung 2325 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2325+0.23 EUR
Mindestbestellmenge: 2325
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BTS724NTMA1
Hersteller: Infineon Technologies
Description: AUTOMOTIVE HIGH SIDE SWITCH
Packaging: Bulk
Part Status: Active
Produkt ist nicht verfügbar
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BBY53-05WH6327 INFNS15715-1.pdf?t.download=true&u=5oefqw
BBY53-05WH6327
Hersteller: Infineon Technologies
Description: VARIABLE CAPACITANCE DIODE
Produkt ist nicht verfügbar
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BC 849B E6327 INFNS14907-1.pdf?t.download=true&u=5oefqw
BC 849B E6327
Hersteller: Infineon Technologies
Description: BIPOLAR GEN PURPOSE TRANSISTOR
auf Bestellung 27000 Stücke:
Lieferzeit 10-14 Tag (e)
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IPP260N06N3G INFNS16348-1.pdf?t.download=true&u=5oefqw
IPP260N06N3G
Hersteller: Infineon Technologies
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 27A (Tc)
Rds On (Max) @ Id, Vgs: 25.7mOhm @ 27A, 10V
Power Dissipation (Max): 36W (Tc)
Vgs(th) (Max) @ Id: 4V @ 11µA
Supplier Device Package: PG-TO220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 30 V
Produkt ist nicht verfügbar
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IPP60R520E6 INFN-S-A0001300235-1.pdf?t.download=true&u=5oefqw
IPP60R520E6
Hersteller: Infineon Technologies
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.1A (Tc)
Rds On (Max) @ Id, Vgs: 520mOhm @ 2.8A, 10V
Power Dissipation (Max): 66W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 230µA
Supplier Device Package: PG-TO220-3-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 23.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 512 pF @ 100 V
Produkt ist nicht verfügbar
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BC 858CE6327 INFNS16508-1.pdf?t.download=true&u=5oefqw
BC 858CE6327
Hersteller: Infineon Technologies
Description: TRANS PNP 30V 0.1A SOT23
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V
Frequency - Transition: 250MHz
Supplier Device Package: PG-SOT23
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 330 mW
auf Bestellung 30000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
8460+0.07 EUR
Mindestbestellmenge: 8460
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BCW60BE6327 INFNS11039-1.pdf?t.download=true&u=5oefqw
BCW60BE6327
Hersteller: Infineon Technologies
Description: TRANS NPN 32V 0.1A SOT23
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 550mV @ 1.25mA, 50mA
Current - Collector Cutoff (Max): 20nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 2mA, 5V
Frequency - Transition: 250MHz
Supplier Device Package: PG-SOT23
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 32 V
Power - Max: 330 mW
Produkt ist nicht verfügbar
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IPP60R600P7 INFN-S-A0006145432-1.pdf?t.download=true&u=5oefqw
IPP60R600P7
Hersteller: Infineon Technologies
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Part Status: Active
auf Bestellung 500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
367+1.44 EUR
Mindestbestellmenge: 367
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BC 848B E6327 INFNS14907-1.pdf?t.download=true&u=5oefqw
BC 848B E6327
Hersteller: Infineon Technologies
Description: BIPOLAR GEN PURPOSE TRANSISTOR
auf Bestellung 30000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
11269+0.05 EUR
Mindestbestellmenge: 11269
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BTS612N1E3128ANTMA1 INFNS05460-1.pdf?t.download=true&u=5oefqw
BTS612N1E3128ANTMA1
Hersteller: Infineon Technologies
Description: BUFFER/INVERTER PERIPHL DRIVER
Packaging: Bulk
Features: Auto Restart, Slew Rate Controlled
Package / Case: TO-263-7, D²Pak (6 Leads + Tab)
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 2
Interface: Parallel
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 160mOhm
Input Type: Non-Inverting
Voltage - Load: 5V ~ 34V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 3.5A
Ratio - Input:Output: 1:1
Supplier Device Package: P-TO263-7-2
Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, Over Voltage, UVLO
Part Status: Active
Produkt ist nicht verfügbar
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BCV61BE6327 INFNS17209-1.pdf?t.download=true&u=5oefqw
BCV61BE6327
Hersteller: Infineon Technologies
Description: TRANSISTORS FOR CURRENT MIRROR
Packaging: Bulk
Voltage - Rated: 30V
Package / Case: TO-253-4, TO-253AA
Current Rating (Amps): 100mA
Mounting Type: Surface Mount
Transistor Type: 2 NPN, Base Collector Junction
Applications: Current Mirror
Supplier Device Package: PG-SOT-143-3D
Part Status: Active
Produkt ist nicht verfügbar
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IPP60R190C3
IPP60R190C3
Hersteller: Infineon Technologies
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Part Status: Active
Produkt ist nicht verfügbar
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IPP60R520C6 INFN-S-A0001300323-1.pdf?t.download=true&u=5oefqw
IPP60R520C6
Hersteller: Infineon Technologies
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.1A (Tc)
Rds On (Max) @ Id, Vgs: 520mOhm @ 2.8A, 10V
Power Dissipation (Max): 29W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 230µA
Supplier Device Package: PG-TO220-3-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 23.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 512 pF @ 100 V
Produkt ist nicht verfügbar
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BC 858C E6327 INFNS16508-1.pdf?t.download=true&u=5oefqw
Hersteller: Infineon Technologies
Description: TRANS PNP 30V 0.1A SOT23
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V
Frequency - Transition: 250MHz
Supplier Device Package: PG-SOT23
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 330 mW
auf Bestellung 9000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
9000+0.07 EUR
Mindestbestellmenge: 9000
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BCW 61C E6327 INFNS11623-1.pdf?t.download=true&u=5oefqw
BCW 61C E6327
Hersteller: Infineon Technologies
Description: TRANS PNP 32V 0.1A SOT23
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 550mV @ 1.25mA, 50mA
Current - Collector Cutoff (Max): 20nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 2mA, 5V
Frequency - Transition: 250MHz
Supplier Device Package: PG-SOT23
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 32 V
Power - Max: 330 mW
Produkt ist nicht verfügbar
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BC 850B E6327 INFNS14907-1.pdf?t.download=true&u=5oefqw
BC 850B E6327
Hersteller: Infineon Technologies
Description: TRANS NPN 45V 0.1A SOT23
auf Bestellung 36000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
7397+0.06 EUR
Mindestbestellmenge: 7397
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IPP60R600CP INFNS17027-1.pdf?t.download=true&u=5oefqw
IPP60R600CP
Hersteller: Infineon Technologies
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.1A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 3.3A, 10V
Power Dissipation (Max): 60W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 220µA
Supplier Device Package: PG-TO220-3-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 550 pF @ 100 V
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
433+1.16 EUR
Mindestbestellmenge: 433
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IPP60R520CP INFNS17026-1.pdf?t.download=true&u=5oefqw
IPP60R520CP
Hersteller: Infineon Technologies
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.8A (Tc)
Rds On (Max) @ Id, Vgs: 520mOhm @ 3.8A, 10V
Power Dissipation (Max): 66W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: PG-TO220-3-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 630 pF @ 100 V
auf Bestellung 500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
500+1.33 EUR
Mindestbestellmenge: 500
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