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BSP125L6327HTSA1 BSP125L6327HTSA1 Infineon Technologies dgdl?folderId=5546d4694909da4801490a07012f053b&fileId=db3a30433b47825b013b50cae9702806 Description: MOSFET N-CH 600V 120MA SOT223-4
Packaging: Bulk
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120mA (Ta)
Rds On (Max) @ Id, Vgs: 45Ohm @ 120mA, 10V
Power Dissipation (Max): 1.8W (Ta)
Vgs(th) (Max) @ Id: 2.3V @ 94µA
Supplier Device Package: PG-SOT223-4-21
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 6.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 150 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
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BTS7811KDTMA1 BTS7811KDTMA1 Infineon Technologies INFNS12368-1.pdf?t.download=true&u=5oefqw Description: BUFFER/INVERTER PERIPHL DRIVER
Produkt ist nicht verfügbar
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BTS54220LBAAUMA1 BTS54220LBAAUMA1 Infineon Technologies Automotive_Application_Guide_2016_BR.PDF?fileId=5546d46158f23e7b0158f8cac4de0051 Description: IC PWR SWITCH N-CHAN 1:1 TSON-24
Packaging: Bulk
Features: Slew Rate Controlled
Package / Case: 24-PowerTDFN
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 4
Interface: SPI
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 9mOhm, 27mOhm
Voltage - Load: 5.5V ~ 28V
Voltage - Supply (Vcc/Vdd): 3.8V ~ 5.5V
Ratio - Input:Output: 1:1
Supplier Device Package: PG-TSON-24-3
Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage, UVLO
Grade: Automotive
Qualification: AEC-Q100
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IPP60R520E6XKSA1 IPP60R520E6XKSA1 Infineon Technologies IPP60R520E6_2_0.pdf?folderId=db3a3043163797a6011638933eda014b&fileId=db3a304327b8975001281ba841551b3c Description: MOSFET N-CH 600V 8.1A TO220-3
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BBY5305WH6327XTSA1 BBY5305WH6327XTSA1 Infineon Technologies bby53series.pdf Description: DIODE TUNING 6V 20MA SOT323
Packaging: Bulk
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Diode Type: 1 Pair Common Cathode
Operating Temperature: -55°C ~ 125°C (TJ)
Capacitance @ Vr, F: 3.1pF @ 3V, 1MHz
Capacitance Ratio Condition: C1/C3
Supplier Device Package: PG-SOT323
Voltage - Peak Reverse (Max): 6 V
Capacitance Ratio: 2.6
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DD180N18SHPSA1 DD180N18SHPSA1 Infineon Technologies DD180N18S.pdf Description: MODULE DIODE THY PB34SB-1
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SPW20N60C3E8177FKSA1 SPW20N60C3E8177FKSA1 Infineon Technologies Description: MOSFET N-CH
Packaging: Bulk
Part Status: Obsolete
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SPD30N03S2L20GBTMA1 SPD30N03S2L20GBTMA1 Infineon Technologies SPD30N03S2L-20_G.pdf Description: MOSFET N-CH 30V 30A TO252-3
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ 18A, 10V
Power Dissipation (Max): 60W (Tc)
Vgs(th) (Max) @ Id: 2V @ 23µA
Supplier Device Package: PG-TO252-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 25 V
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SPD30N03S2L07GBTMA1 SPD30N03S2L07GBTMA1 Infineon Technologies SPD30N03S2L-07_G.pdf Description: MOSFET N-CH 30V 30A TO252-3
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 6.7mOhm @ 30A, 10V
Power Dissipation (Max): 136W (Tc)
Vgs(th) (Max) @ Id: 2V @ 85µA
Supplier Device Package: PG-TO252-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2530 pF @ 25 V
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BCX6910E6327HTSA1 BCX6910E6327HTSA1 Infineon Technologies bcx69.pdf?folderId=db3a304314dca38901155ffc06d51dc7&fileId=db3a3043156fd573011589f3f56603ee&location=.en.product.findProductTypeByName.html_dgdl_bcx69.pdf Description: TRANS PNP 20V 1A PG-SOT89
Packaging: Bulk
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 85 @ 500mA, 1V
Frequency - Transition: 100MHz
Supplier Device Package: PG-SOT89
Part Status: Obsolete
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 20 V
Power - Max: 3 W
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BDP948E6433HTMA1 BDP948E6433HTMA1 Infineon Technologies bdp948_bdp950.pdf?folderId=db3a304314dca38901155ffc06d51dc7&fileId=db3a304314dca38901156149b3e81f67&location=.en.product.findProductTypeByName.html_dgdl_bdp948_bdp950.pdf Description: TRANS PNP 45V 3A PG-SOT223-4
Packaging: Bulk
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 200mA, 2A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 85 @ 500mA, 1V
Frequency - Transition: 100MHz
Supplier Device Package: PG-SOT223-4
Part Status: Obsolete
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 5 W
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BB555H7902XTSA1 BB555H7902XTSA1 Infineon Technologies BB535%2CBB555_Series.pdf Description: DIODE VAR CAP 30V 20MA SCD80
Packaging: Bulk
Package / Case: SC-80
Mounting Type: Surface Mount
Diode Type: Single
Operating Temperature: -55°C ~ 150°C (TJ)
Capacitance @ Vr, F: 2.3pF @ 28V, 1MHz
Capacitance Ratio Condition: C1/C28
Supplier Device Package: SCD-80
Voltage - Peak Reverse (Max): 30 V
Capacitance Ratio: 9.8
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BAV74 BAV74 Infineon Technologies SIEMD095-344.pdf?t.download=true&u=5oefqw Description: DIODE ARRAY GP 50V 200MA SOT23-3
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 200mA
Supplier Device Package: SOT-23-3
Operating Temperature - Junction: 150°C (Max)
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Current - Reverse Leakage @ Vr: 100 nA @ 50 V
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BFN38E6327HTSA1 BFN38E6327HTSA1 Infineon Technologies bfn38.pdf?folderId=db3a30431441fb5d011449af3ad90232&fileId=db3a30431441fb5d011449b536510236 Description: TRANS NPN 300V 0.2A SOT223-4
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BTS54040LBFAUMA1 BTS54040LBFAUMA1 Infineon Technologies BTS54040-LBF.pdf Description: IC PWR SWITCH N-CHAN 1:2 TSON-24
Packaging: Bulk
Package / Case: 24-PowerTDFN
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 4
Interface: SPI
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 39mOhm
Voltage - Load: 5.5V ~ 28V
Voltage - Supply (Vcc/Vdd): 3.8V ~ 5.5V
Current - Output (Max): 2A
Ratio - Input:Output: 1:2
Supplier Device Package: PG-TSON-24-3
Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage
Part Status: Discontinued at Digi-Key
Grade: Automotive
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BSC884N03MS G BSC884N03MS G Infineon Technologies BSC884N03MS_G.pdf Description: MOSFET N-CH 34V 17A/85A TDSON
Packaging: Bulk
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 85A (Tc)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 30A, 10V
Power Dissipation (Max): 2.5W (Ta), 50W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TDSON-8-1
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 34 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2700 pF @ 15 V
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BG3130H6327XTSA1 BG3130H6327XTSA1 Infineon Technologies BG3130.pdf Description: RF MOSFET 5V SOT363
Packaging: Bulk
Package / Case: 6-VSSOP, SC-88, SOT-363
Current Rating (Amps): 25mA
Mounting Type: Surface Mount
Frequency: 800MHz
Configuration: 2 N-Channel (Dual)
Gain: 24dB
Technology: MOSFET (Metal Oxide)
Noise Figure: 1.3dB
Supplier Device Package: PG-SOT363-PO
Part Status: Obsolete
Voltage - Rated: 8 V
Voltage - Test: 5 V
Current - Test: 14 mA
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IPI50R250CPXKSA1 IPI50R250CPXKSA1 Infineon Technologies IPI50R250CP_rev2.0.pdf?folderId=db3a3043156fd5730115c736bcc70ff2&fileId=db3a304320896aa20120d244f52350be Description: MOSFET N-CH 500V 13A TO262-3
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
Rds On (Max) @ Id, Vgs: 250mOhm @ 7.8A, 10V
Power Dissipation (Max): 114W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 520µA
Supplier Device Package: PG-TO262-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1420 pF @ 100 V
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270+1.74 EUR
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CY7C1021CV33-10VXC CY7C1021CV33-10VXC Infineon Technologies CY7C1021CV33%20Rev.H.pdf Description: IC SRAM 1MBIT PARALLEL 44SOJ
Packaging: Tube
Package / Case: 44-BSOJ (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 1Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 3V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 44-SOJ
Write Cycle Time - Word, Page: 10ns
Memory Interface: Parallel
Access Time: 10 ns
Memory Organization: 64K x 16
DigiKey Programmable: Not Verified
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IPP100N06S205AKSA2 IPP100N06S205AKSA2 Infineon Technologies IPx100N06S2-05.pdf Description: MOSFET N-CH 55V 100A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 5mOhm @ 80A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PG-TO220-3-1
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5110 pF @ 25 V
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IPB50CN10NGATMA1 IPB50CN10NGATMA1 Infineon Technologies IPx50CN10N_G.pdf Description: MOSFET N-CH 100V 20A TO263-3
Packaging: Bulk
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 50mOhm @ 20A, 10V
Power Dissipation (Max): 44W (Tc)
Vgs(th) (Max) @ Id: 4V @ 20µA
Supplier Device Package: PG-TO263-3-2
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1090 pF @ 50 V
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FS100R12KT4B11BOSA1 Infineon Technologies FS100R12KT4_B11_Rev2_2013-11-04.pdf Description: IGBT MOD 1200V 100A 515W
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 100A
NTC Thermistor: No
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 515 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 6.3 nF @ 25 V
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CY7C1021CV33-10ZXI CY7C1021CV33-10ZXI Infineon Technologies CY7C1021CV33%20Rev.H.pdf Description: IC SRAM 1MBIT PARALLEL 44TSOP II
Packaging: Tray
Package / Case: 44-TSOP (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 1Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 3V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 44-TSOP II
Write Cycle Time - Word, Page: 10ns
Memory Interface: Parallel
Access Time: 10 ns
Memory Organization: 64K x 16
DigiKey Programmable: Not Verified
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IPP100N04S204AKSA2 IPP100N04S204AKSA2 Infineon Technologies IPx100N04S2-04.pdf Description: MOSFET N-CH 40V 100A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 3.6mOhm @ 80A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PG-TO220-3-1
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 172 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5300 pF @ 25 V
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IHW40T120FKSA1 IHW40T120FKSA1 Infineon Technologies IHW40T120.pdf Description: IGBT TRENCH FS 1200V 75A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 195 ns
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 40A
Supplier Device Package: PG-TO247-3-1
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 48ns/480ns
Switching Energy: 6.5mJ
Test Condition: 600V, 40A, 15Ohm, 15V
Gate Charge: 203 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 105 A
Power - Max: 270 W
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IPI65R150CFDXKSA1 IPI65R150CFDXKSA1 Infineon Technologies Infineon-IPX65R150CFD-DS-v02_00-en.pdf?fileId=db3a3043338c8ac80133ace218433063 Description: MOSFET N-CH 650V 22.4A TO262-3
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22.4A (Tc)
Rds On (Max) @ Id, Vgs: 150mOhm @ 9.3A, 10V
Power Dissipation (Max): 195.3W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 900µA
Supplier Device Package: PG-TO262-3-1
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 86 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2340 pF @ 100 V
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CY7C024-25JXC CY7C024-25JXC Infineon Technologies CY7C024%2C41%2C025%2C0251%20RevC.pdf Description: IC SRAM 64KBIT PARALLEL 84PLCC
Packaging: Tube
Package / Case: 84-LCC (J-Lead)
Mounting Type: Surface Mount
Memory Size: 64Kbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: SRAM - Dual Port, Asynchronous
Memory Format: SRAM
Supplier Device Package: 84-PLCC (29.31x29.31)
Write Cycle Time - Word, Page: 25ns
Memory Interface: Parallel
Access Time: 25 ns
Memory Organization: 4K x 16
DigiKey Programmable: Not Verified
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SGP30N60XKSA1 SGP30N60XKSA1 Infineon Technologies SGP_B_W30N60_3.pdf Description: IGBT 600V 41A 250W TO263
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SPP03N60C3XKSA1 SPP03N60C3XKSA1 Infineon Technologies Infineon-SPP_A03N60C3-DS-v03_01-en.pdf?fileId=db3a304412b407950112b42dfb1c492b Description: LOW POWER_LEGACY
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.2A (Tc)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 2A, 10V
Power Dissipation (Max): 38W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 135µA
Supplier Device Package: PG-TO220-3-1
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 400 pF @ 25 V
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SPP12N50C3XKSA1 SPP12N50C3XKSA1 Infineon Technologies SPx12N50C3.pdf Description: LOW POWER_LEGACY
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11.6A (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 7A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 500µA
Supplier Device Package: PG-TO220-3-1
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 25 V
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ICE2PCS03XKLA1 ICE2PCS03XKLA1 Infineon Technologies INFNS16598-1.pdf Description: IC PFC CTRLR CCM 100KHZ 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 11V ~ 25V
Frequency - Switching: 100kHz
Mode: Continuous Conduction (CCM)
Supplier Device Package: PG-DIP-8
Current - Startup: 450 µA
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IPP60R520C6XKSA1 IPP60R520C6XKSA1 Infineon Technologies IPP60R520C6_2_0.pdf?folderId=db3a3043163797a6011638933eda014b&fileId=db3a304323b87bc20123e68d6824590e Description: MOSFET N-CH 600V 8.1A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.1A (Tc)
Rds On (Max) @ Id, Vgs: 520mOhm @ 2.8A, 10V
Power Dissipation (Max): 66W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 230µA
Supplier Device Package: PG-TO220-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 23.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 512 pF @ 100 V
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IRAM630-1062F2 Infineon Technologies Description: MOD IPM PWR HYBRID
Packaging: Tube
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IPU50R950CEAKMA1 IPU50R950CEAKMA1 Infineon Technologies Infineon-IPU50R950CE-DS-v02_03-EN.pdf?fileId=db3a3043382e837301385194b31e1064 Description: MOSFET N-CH 500V 4.3A TO251-3
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.3A (Tc)
Rds On (Max) @ Id, Vgs: 950mOhm @ 1.2A, 13V
Power Dissipation (Max): 53W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 100µA
Supplier Device Package: PG-TO251-3
Drive Voltage (Max Rds On, Min Rds On): 13V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 10.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 231 pF @ 100 V
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IPI80N07S405AKSA1 Infineon Technologies IP%28B%2CI%2CP%2980N07S4-05_Rev1.0_07-14-14.pdf Description: MOSFET N-CH TO262-3
Packaging: Tube
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Part Status: Obsolete
Grade: Automotive
Qualification: AEC-Q101
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SPI21N10 SPI21N10 Infineon Technologies SPB21N10.pdf Description: MOSFET N-CH 100V 21A TO262-3
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
Rds On (Max) @ Id, Vgs: 80mOhm @ 15A, 10V
Power Dissipation (Max): 90W (Tc)
Vgs(th) (Max) @ Id: 4V @ 44µA
Supplier Device Package: PG-TO262-3-1
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 38.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 865 pF @ 25 V
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SPI15N65C3XKSA1 SPI15N65C3XKSA1 Infineon Technologies SPI15N65C3.pdf Description: MOSFET N-CH 650V 15A TO262-3
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 9.4A, 10V
Power Dissipation (Max): 156W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 675µA
Supplier Device Package: PG-TO262-3-1
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 25 V
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SPP03N60S5XKSA1 SPP03N60S5XKSA1 Infineon Technologies SPP03N60S5_Rev.2.4.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a304412b407950112b42c7ad9470b Description: LOW POWER_LEGACY
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.2A (Tc)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 2A, 10V
Power Dissipation (Max): 38W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 135µA
Supplier Device Package: PG-TO220-3-1
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 420 pF @ 25 V
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SPB03N60C3ATMA1 SPB03N60C3ATMA1 Infineon Technologies SPB03N60C3_Rev.2.5.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a304412b407950112b42e517e49a0 Description: MOSFET N-CH 650V 3.2A TO263-3
Packaging: Bulk
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.2A (Tc)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 2A, 10V
Power Dissipation (Max): 38W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 135µA
Supplier Device Package: PG-TO263-3-2
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 400 pF @ 25 V
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TLE4276SVAKSA1 TLE4276SVAKSA1 Infineon Technologies fundamentals-of-power-semiconductors Description: IC REG LIN POS ADJ 400MA TO220-5
Packaging: Tube
Package / Case: TO-220-5
Output Type: Adjustable
Mounting Type: Through Hole
Current - Output: 400mA
Operating Temperature: -40°C ~ 150°C
Output Configuration: Positive
Current - Quiescent (Iq): 200 µA
Voltage - Input (Max): 40V
Number of Regulators: 1
Supplier Device Package: P-TO220-5-43
Voltage - Output (Max): 20V
Voltage - Output (Min/Fixed): 2.5V
Control Features: Inhibit
Part Status: Obsolete
PSRR: 54dB (100Hz)
Voltage Dropout (Max): 0.5V @ 250mA
Protection Features: Over Current, Over Temperature, Reverse Polarity, Short Circuit
Current - Supply (Max): 25 mA
Grade: Automotive
Qualification: AEC-Q100
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IPS075N03LGAKMA1 IPS075N03LGAKMA1 Infineon Technologies IP%28D%2CS%2CF%2CU%29075N03L_G.pdf Description: MOSFET N-CH 30V 50A TO251-3
Packaging: Tube
Package / Case: TO-251-3 Stub Leads, IPak
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 30A, 10V
Power Dissipation (Max): 47W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: PG-TO251-3-11
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 15 V
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IPP90N06S404AKSA1 IPP90N06S404AKSA1 Infineon Technologies IPx90N06S4-04.pdf Description: MOSFET N-CH 60V 90A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 90A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 4V @ 90µA
Supplier Device Package: PG-TO220-3-1
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 128 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10400 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
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CY7C4831-10AC CY7C4831-10AC Infineon Technologies CY7C4801%2C11%2C21%2C31%2C41%2C51.pdf Description: IC SYNC FIFO 2KX9X2 64LQFP
Packaging: Bag
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Function: Synchronous
Memory Size: 36K (2K x 9 x 2)
Operating Temperature: 0°C ~ 70°C
Data Rate: 100MHz
Access Time: 8ns
Current - Supply (Max): 60mA
Supplier Device Package: 64-TQFP (14x14)
Bus Directional: Bi-Directional
Expansion Type: Depth, Width
Programmable Flags Support: Yes
Retransmit Capability: No
FWFT Support: No
Part Status: Obsolete
Voltage - Supply: 4.5 V ~ 5.5 V
DigiKey Programmable: Not Verified
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FS150R07N3E4B11BOSA1 FS150R07N3E4B11BOSA1 Infineon Technologies FS150R07N3E4_B11.pdf Description: IGBT MOD 650V 150A 430W
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 150A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 150 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Power - Max: 430 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 9.3 nF @ 25 V
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IRFZ48VSPBF IRFZ48VSPBF Infineon Technologies irfz48vspbf.pdf?fileId=5546d462533600a40153563ed0e42237 Description: MOSFET N-CH 60V 72A D2PAK
Produkt ist nicht verfügbar
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IPB80N07S405ATMA1 Infineon Technologies IP%28B%2CI%2CP%2980N07S4-05_Rev1.0_07-14-14.pdf Description: MOSFET N-CH TO263-3
Packaging: Bulk
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Part Status: Obsolete
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 24755 Stücke:
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IPP65R600C6XKSA1 IPP65R600C6XKSA1 Infineon Technologies IPP65R600C6_2_0.pdf?folderId=db3a3043163797a6011637d4bae7003b&fileId=db3a30432ac1eb91012ac74e318c2c70 Description: MOSFET N-CH 650V 7.3A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.3A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 2.1A, 10V
Power Dissipation (Max): 63W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 210µA
Supplier Device Package: PG-TO220-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 440 pF @ 100 V
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SKW20N60HSFKSA1 SKW20N60HSFKSA1 Infineon Technologies SKW20N60HS.pdf Description: IGBT NPT 600V 36A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 130 ns
Vce(on) (Max) @ Vge, Ic: 3.15V @ 15V, 20A
Supplier Device Package: PG-TO247-3-1
IGBT Type: NPT
Td (on/off) @ 25°C: 18ns/207ns
Switching Energy: 690µJ
Test Condition: 400V, 20A, 16Ohm, 15V
Gate Charge: 100 nC
Current - Collector (Ic) (Max): 36 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 80 A
Power - Max: 178 W
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SPB100N06S2-05 SPB100N06S2-05 Infineon Technologies SP%28B%2CP%29100N06S2-05.pdf Description: MOSFET N-CH 55V 100A TO263-3
Packaging: Bulk
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 4.7mOhm @ 80A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PG-TO263-3-2
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6800 pF @ 25 V
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TZ500N14KOFHPSA1 TZ500N14KOFHPSA1 Infineon Technologies TZ500N.pdf Description: SCR MODULE 1.4KV 1050A MODULE
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 125°C
Structure: Single
Current - Hold (Ih) (Max): 300 mA
Current - Gate Trigger (Igt) (Max): 250 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 17A @ 50Hz
Number of SCRs, Diodes: 1 SCR
Current - On State (It (AV)) (Max): 669 A
Voltage - Gate Trigger (Vgt) (Max): 2.2 V
Part Status: Obsolete
Current - On State (It (RMS)) (Max): 1050 A
Voltage - Off State: 1.4 kV
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SPI12N50C3XKSA1 SPI12N50C3XKSA1 Infineon Technologies SPx12N50C3.pdf Description: MOSFET N-CH 560V 11.6A TO262-3
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11.6A (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 7A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 500µA
Supplier Device Package: PG-TO262-3-1
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 560 V
Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 25 V
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CY24115SXC-2 CY24115SXC-2 Infineon Technologies Description: IC CLOCK GENERATOR 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Output: Clock
Frequency - Max: 180.63MHz
Type: Clock Generator
Input: Clock
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 3.14V ~ 3.47V
Ratio - Input:Output: 1:1
Differential - Input:Output: No/No
Supplier Device Package: 8-SOIC
PLL: Yes
Divider/Multiplier: No/No
Part Status: Obsolete
Number of Circuits: 1
DigiKey Programmable: Not Verified
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CYD02S36V-167BBC CYD02S36V-167BBC Infineon Technologies CYDxxS36V_8.pdf Description: IC SRAM 2MBIT PARALLEL 256FBGA
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CY7C0241-55AXI CY7C0241-55AXI Infineon Technologies CY7C024%2CA%2C0241%2C%20CY7C025%2C0251.pdf Description: IC SRAM 72KBIT PARALLEL 100TQFP
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Memory Size: 72Kbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: SRAM - Dual Port, Asynchronous
Memory Format: SRAM
Supplier Device Package: 100-TQFP (14x14)
Write Cycle Time - Word, Page: 55ns
Memory Interface: Parallel
Access Time: 55 ns
Memory Organization: 4K x 18
DigiKey Programmable: Not Verified
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SDP06S60 SDP06S60 Infineon Technologies SDP,SDT06S60.pdf Description: DIODE SCHOTTKY 600V 6A TO220AB
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CY2DM1502ZXC CY2DM1502ZXC Infineon Technologies ?utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Description: IC CLK BUFFER 1:2 1.5GHZ 8TSSOP
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CY7C25682KV18-500BZC CY7C25682KV18-500BZC Infineon Technologies Infineon-CY7C25682KV18_CY7C25702KV18_72-Mbit_DDR_II+_SRAM_Two-Word_Burst_Architecture_(2.5_Cycle_Read_Latency)_with_ODT-DataSheet-v07_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebde66630e8&utm_source=cypress&utm_medium=referral&ut Description: IC SRAM 72MBIT PARALLEL 165FBGA
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CY2308ESXC-2 CY2308ESXC-2 Infineon Technologies CY2308.pdf Description: IC FANOUT BUFFER 16SOIC
Packaging: Tube
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Output: LVCMOS
Frequency - Max: 133.3MHz
Type: Fanout Buffer (Distribution), Zero Delay Buffer
Input: LVCMOS, LVTTL
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 3V ~ 3.6V
Ratio - Input:Output: 1:8
Differential - Input:Output: No/No
Supplier Device Package: 16-SOIC
PLL: Yes
Divider/Multiplier: Yes/Yes
Part Status: Obsolete
Number of Circuits: 1
DigiKey Programmable: Not Verified
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IPP100N04S2L03AKSA2 IPP100N04S2L03AKSA2 Infineon Technologies Infineon-IPP_B100N04S2L-DS-v01_00-en.pdf?fileId=db3a304412b407950112b42b9443455d&ack=t Description: MOSFET N-CH 40V 100A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 3.3mOhm @ 80A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TO220-3-1
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 230 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6000 pF @ 25 V
Qualification: AEC-Q101
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CY2DP818ZXC-2 CY2DP818ZXC-2 Infineon Technologies CY2DP818-2.pdf Description: IC CLK BUFFER 1:8 350MHZ 38TSSOP
Packaging: Tube
Package / Case: 38-TFSOP (0.173", 4.40mm Width)
Number of Circuits: 1
Mounting Type: Surface Mount
Output: LVPECL
Type: Fanout Buffer (Distribution)
Input: LVDS, LVPECL, LVTTL
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 3.135V ~ 3.465V
Ratio - Input:Output: 1:8
Differential - Input:Output: Yes/Yes
Supplier Device Package: 38-TSSOP
Frequency - Max: 350 MHz
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BSP125L6327HTSA1 dgdl?folderId=5546d4694909da4801490a07012f053b&fileId=db3a30433b47825b013b50cae9702806
BSP125L6327HTSA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 600V 120MA SOT223-4
Packaging: Bulk
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120mA (Ta)
Rds On (Max) @ Id, Vgs: 45Ohm @ 120mA, 10V
Power Dissipation (Max): 1.8W (Ta)
Vgs(th) (Max) @ Id: 2.3V @ 94µA
Supplier Device Package: PG-SOT223-4-21
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 6.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 150 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 343141 Stücke:
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568+0.8 EUR
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BTS7811KDTMA1 INFNS12368-1.pdf?t.download=true&u=5oefqw
BTS7811KDTMA1
Hersteller: Infineon Technologies
Description: BUFFER/INVERTER PERIPHL DRIVER
Produkt ist nicht verfügbar
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BTS54220LBAAUMA1 Automotive_Application_Guide_2016_BR.PDF?fileId=5546d46158f23e7b0158f8cac4de0051
BTS54220LBAAUMA1
Hersteller: Infineon Technologies
Description: IC PWR SWITCH N-CHAN 1:1 TSON-24
Packaging: Bulk
Features: Slew Rate Controlled
Package / Case: 24-PowerTDFN
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 4
Interface: SPI
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 9mOhm, 27mOhm
Voltage - Load: 5.5V ~ 28V
Voltage - Supply (Vcc/Vdd): 3.8V ~ 5.5V
Ratio - Input:Output: 1:1
Supplier Device Package: PG-TSON-24-3
Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage, UVLO
Grade: Automotive
Qualification: AEC-Q100
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IPP60R520E6XKSA1 IPP60R520E6_2_0.pdf?folderId=db3a3043163797a6011638933eda014b&fileId=db3a304327b8975001281ba841551b3c
IPP60R520E6XKSA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 600V 8.1A TO220-3
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BBY5305WH6327XTSA1 bby53series.pdf
BBY5305WH6327XTSA1
Hersteller: Infineon Technologies
Description: DIODE TUNING 6V 20MA SOT323
Packaging: Bulk
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Diode Type: 1 Pair Common Cathode
Operating Temperature: -55°C ~ 125°C (TJ)
Capacitance @ Vr, F: 3.1pF @ 3V, 1MHz
Capacitance Ratio Condition: C1/C3
Supplier Device Package: PG-SOT323
Voltage - Peak Reverse (Max): 6 V
Capacitance Ratio: 2.6
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DD180N18SHPSA1 DD180N18S.pdf
DD180N18SHPSA1
Hersteller: Infineon Technologies
Description: MODULE DIODE THY PB34SB-1
Produkt ist nicht verfügbar
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SPW20N60C3E8177FKSA1
SPW20N60C3E8177FKSA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH
Packaging: Bulk
Part Status: Obsolete
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97+4.68 EUR
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SPD30N03S2L20GBTMA1 SPD30N03S2L-20_G.pdf
SPD30N03S2L20GBTMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 30V 30A TO252-3
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ 18A, 10V
Power Dissipation (Max): 60W (Tc)
Vgs(th) (Max) @ Id: 2V @ 23µA
Supplier Device Package: PG-TO252-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 25 V
auf Bestellung 22023 Stücke:
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SPD30N03S2L07GBTMA1 SPD30N03S2L-07_G.pdf
SPD30N03S2L07GBTMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 30V 30A TO252-3
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 6.7mOhm @ 30A, 10V
Power Dissipation (Max): 136W (Tc)
Vgs(th) (Max) @ Id: 2V @ 85µA
Supplier Device Package: PG-TO252-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2530 pF @ 25 V
auf Bestellung 1757 Stücke:
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337+1.34 EUR
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BCX6910E6327HTSA1 bcx69.pdf?folderId=db3a304314dca38901155ffc06d51dc7&fileId=db3a3043156fd573011589f3f56603ee&location=.en.product.findProductTypeByName.html_dgdl_bcx69.pdf
BCX6910E6327HTSA1
Hersteller: Infineon Technologies
Description: TRANS PNP 20V 1A PG-SOT89
Packaging: Bulk
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 85 @ 500mA, 1V
Frequency - Transition: 100MHz
Supplier Device Package: PG-SOT89
Part Status: Obsolete
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 20 V
Power - Max: 3 W
auf Bestellung 213000 Stücke:
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10764+0.049 EUR
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BDP948E6433HTMA1 bdp948_bdp950.pdf?folderId=db3a304314dca38901155ffc06d51dc7&fileId=db3a304314dca38901156149b3e81f67&location=.en.product.findProductTypeByName.html_dgdl_bdp948_bdp950.pdf
BDP948E6433HTMA1
Hersteller: Infineon Technologies
Description: TRANS PNP 45V 3A PG-SOT223-4
Packaging: Bulk
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 200mA, 2A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 85 @ 500mA, 1V
Frequency - Transition: 100MHz
Supplier Device Package: PG-SOT223-4
Part Status: Obsolete
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 5 W
auf Bestellung 22991 Stücke:
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Anzahl Preis
897+0.5 EUR
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BB555H7902XTSA1 BB535%2CBB555_Series.pdf
BB555H7902XTSA1
Hersteller: Infineon Technologies
Description: DIODE VAR CAP 30V 20MA SCD80
Packaging: Bulk
Package / Case: SC-80
Mounting Type: Surface Mount
Diode Type: Single
Operating Temperature: -55°C ~ 150°C (TJ)
Capacitance @ Vr, F: 2.3pF @ 28V, 1MHz
Capacitance Ratio Condition: C1/C28
Supplier Device Package: SCD-80
Voltage - Peak Reverse (Max): 30 V
Capacitance Ratio: 9.8
auf Bestellung 294000 Stücke:
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6918+0.065 EUR
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BAV74 SIEMD095-344.pdf?t.download=true&u=5oefqw
BAV74
Hersteller: Infineon Technologies
Description: DIODE ARRAY GP 50V 200MA SOT23-3
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 200mA
Supplier Device Package: SOT-23-3
Operating Temperature - Junction: 150°C (Max)
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Current - Reverse Leakage @ Vr: 100 nA @ 50 V
auf Bestellung 58507 Stücke:
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4724+0.091 EUR
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BFN38E6327HTSA1 bfn38.pdf?folderId=db3a30431441fb5d011449af3ad90232&fileId=db3a30431441fb5d011449b536510236
BFN38E6327HTSA1
Hersteller: Infineon Technologies
Description: TRANS NPN 300V 0.2A SOT223-4
auf Bestellung 54000 Stücke:
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Anzahl Preis
2046+0.24 EUR
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BTS54040LBFAUMA1 BTS54040-LBF.pdf
BTS54040LBFAUMA1
Hersteller: Infineon Technologies
Description: IC PWR SWITCH N-CHAN 1:2 TSON-24
Packaging: Bulk
Package / Case: 24-PowerTDFN
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 4
Interface: SPI
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 39mOhm
Voltage - Load: 5.5V ~ 28V
Voltage - Supply (Vcc/Vdd): 3.8V ~ 5.5V
Current - Output (Max): 2A
Ratio - Input:Output: 1:2
Supplier Device Package: PG-TSON-24-3
Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage
Part Status: Discontinued at Digi-Key
Grade: Automotive
auf Bestellung 31879 Stücke:
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Anzahl Preis
111+4.42 EUR
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BSC884N03MS G BSC884N03MS_G.pdf
BSC884N03MS G
Hersteller: Infineon Technologies
Description: MOSFET N-CH 34V 17A/85A TDSON
Packaging: Bulk
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 85A (Tc)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 30A, 10V
Power Dissipation (Max): 2.5W (Ta), 50W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TDSON-8-1
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 34 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2700 pF @ 15 V
auf Bestellung 5000 Stücke:
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Anzahl Preis
656+0.69 EUR
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BG3130H6327XTSA1 BG3130.pdf
BG3130H6327XTSA1
Hersteller: Infineon Technologies
Description: RF MOSFET 5V SOT363
Packaging: Bulk
Package / Case: 6-VSSOP, SC-88, SOT-363
Current Rating (Amps): 25mA
Mounting Type: Surface Mount
Frequency: 800MHz
Configuration: 2 N-Channel (Dual)
Gain: 24dB
Technology: MOSFET (Metal Oxide)
Noise Figure: 1.3dB
Supplier Device Package: PG-SOT363-PO
Part Status: Obsolete
Voltage - Rated: 8 V
Voltage - Test: 5 V
Current - Test: 14 mA
auf Bestellung 531000 Stücke:
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Anzahl Preis
2435+0.18 EUR
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IPI50R250CPXKSA1 IPI50R250CP_rev2.0.pdf?folderId=db3a3043156fd5730115c736bcc70ff2&fileId=db3a304320896aa20120d244f52350be
IPI50R250CPXKSA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 500V 13A TO262-3
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
Rds On (Max) @ Id, Vgs: 250mOhm @ 7.8A, 10V
Power Dissipation (Max): 114W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 520µA
Supplier Device Package: PG-TO262-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1420 pF @ 100 V
auf Bestellung 1485 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
270+1.74 EUR
Mindestbestellmenge: 270
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CY7C1021CV33-10VXC CY7C1021CV33%20Rev.H.pdf
CY7C1021CV33-10VXC
Hersteller: Infineon Technologies
Description: IC SRAM 1MBIT PARALLEL 44SOJ
Packaging: Tube
Package / Case: 44-BSOJ (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 1Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 3V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 44-SOJ
Write Cycle Time - Word, Page: 10ns
Memory Interface: Parallel
Access Time: 10 ns
Memory Organization: 64K x 16
DigiKey Programmable: Not Verified
auf Bestellung 3077 Stücke:
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Anzahl Preis
173+2.8 EUR
Mindestbestellmenge: 173
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IPP100N06S205AKSA2 IPx100N06S2-05.pdf
IPP100N06S205AKSA2
Hersteller: Infineon Technologies
Description: MOSFET N-CH 55V 100A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 5mOhm @ 80A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PG-TO220-3-1
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5110 pF @ 25 V
auf Bestellung 16000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
293+1.73 EUR
Mindestbestellmenge: 293
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IPB50CN10NGATMA1 IPx50CN10N_G.pdf
IPB50CN10NGATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 100V 20A TO263-3
Packaging: Bulk
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 50mOhm @ 20A, 10V
Power Dissipation (Max): 44W (Tc)
Vgs(th) (Max) @ Id: 4V @ 20µA
Supplier Device Package: PG-TO263-3-2
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1090 pF @ 50 V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
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FS100R12KT4B11BOSA1 FS100R12KT4_B11_Rev2_2013-11-04.pdf
Hersteller: Infineon Technologies
Description: IGBT MOD 1200V 100A 515W
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 100A
NTC Thermistor: No
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 515 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 6.3 nF @ 25 V
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CY7C1021CV33-10ZXI CY7C1021CV33%20Rev.H.pdf
CY7C1021CV33-10ZXI
Hersteller: Infineon Technologies
Description: IC SRAM 1MBIT PARALLEL 44TSOP II
Packaging: Tray
Package / Case: 44-TSOP (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 1Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 3V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 44-TSOP II
Write Cycle Time - Word, Page: 10ns
Memory Interface: Parallel
Access Time: 10 ns
Memory Organization: 64K x 16
DigiKey Programmable: Not Verified
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IPP100N04S204AKSA2 IPx100N04S2-04.pdf
IPP100N04S204AKSA2
Hersteller: Infineon Technologies
Description: MOSFET N-CH 40V 100A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 3.6mOhm @ 80A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PG-TO220-3-1
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 172 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5300 pF @ 25 V
auf Bestellung 9616 Stücke:
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182+2.55 EUR
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IHW40T120FKSA1 IHW40T120.pdf
IHW40T120FKSA1
Hersteller: Infineon Technologies
Description: IGBT TRENCH FS 1200V 75A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 195 ns
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 40A
Supplier Device Package: PG-TO247-3-1
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 48ns/480ns
Switching Energy: 6.5mJ
Test Condition: 600V, 40A, 15Ohm, 15V
Gate Charge: 203 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 105 A
Power - Max: 270 W
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48+9.41 EUR
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IPI65R150CFDXKSA1 Infineon-IPX65R150CFD-DS-v02_00-en.pdf?fileId=db3a3043338c8ac80133ace218433063
IPI65R150CFDXKSA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 650V 22.4A TO262-3
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22.4A (Tc)
Rds On (Max) @ Id, Vgs: 150mOhm @ 9.3A, 10V
Power Dissipation (Max): 195.3W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 900µA
Supplier Device Package: PG-TO262-3-1
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 86 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2340 pF @ 100 V
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189+2.68 EUR
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CY7C024-25JXC CY7C024%2C41%2C025%2C0251%20RevC.pdf
CY7C024-25JXC
Hersteller: Infineon Technologies
Description: IC SRAM 64KBIT PARALLEL 84PLCC
Packaging: Tube
Package / Case: 84-LCC (J-Lead)
Mounting Type: Surface Mount
Memory Size: 64Kbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: SRAM - Dual Port, Asynchronous
Memory Format: SRAM
Supplier Device Package: 84-PLCC (29.31x29.31)
Write Cycle Time - Word, Page: 25ns
Memory Interface: Parallel
Access Time: 25 ns
Memory Organization: 4K x 16
DigiKey Programmable: Not Verified
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39+12.66 EUR
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SGP30N60XKSA1 SGP_B_W30N60_3.pdf
SGP30N60XKSA1
Hersteller: Infineon Technologies
Description: IGBT 600V 41A 250W TO263
auf Bestellung 8050 Stücke:
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SPP03N60C3XKSA1 Infineon-SPP_A03N60C3-DS-v03_01-en.pdf?fileId=db3a304412b407950112b42dfb1c492b
SPP03N60C3XKSA1
Hersteller: Infineon Technologies
Description: LOW POWER_LEGACY
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.2A (Tc)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 2A, 10V
Power Dissipation (Max): 38W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 135µA
Supplier Device Package: PG-TO220-3-1
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 400 pF @ 25 V
auf Bestellung 624418 Stücke:
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545+0.83 EUR
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SPP12N50C3XKSA1 SPx12N50C3.pdf
SPP12N50C3XKSA1
Hersteller: Infineon Technologies
Description: LOW POWER_LEGACY
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11.6A (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 7A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 500µA
Supplier Device Package: PG-TO220-3-1
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 25 V
auf Bestellung 10179 Stücke:
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219+2.22 EUR
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ICE2PCS03XKLA1 INFNS16598-1.pdf
ICE2PCS03XKLA1
Hersteller: Infineon Technologies
Description: IC PFC CTRLR CCM 100KHZ 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 11V ~ 25V
Frequency - Switching: 100kHz
Mode: Continuous Conduction (CCM)
Supplier Device Package: PG-DIP-8
Current - Startup: 450 µA
auf Bestellung 24000 Stücke:
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Anzahl Preis
159+2.85 EUR
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IPP60R520C6XKSA1 IPP60R520C6_2_0.pdf?folderId=db3a3043163797a6011638933eda014b&fileId=db3a304323b87bc20123e68d6824590e
IPP60R520C6XKSA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 600V 8.1A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.1A (Tc)
Rds On (Max) @ Id, Vgs: 520mOhm @ 2.8A, 10V
Power Dissipation (Max): 66W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 230µA
Supplier Device Package: PG-TO220-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 23.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 512 pF @ 100 V
auf Bestellung 28550 Stücke:
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Anzahl Preis
433+1.16 EUR
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IRAM630-1062F2
Hersteller: Infineon Technologies
Description: MOD IPM PWR HYBRID
Packaging: Tube
auf Bestellung 44560 Stücke:
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27+18.41 EUR
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IPU50R950CEAKMA1 Infineon-IPU50R950CE-DS-v02_03-EN.pdf?fileId=db3a3043382e837301385194b31e1064
IPU50R950CEAKMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 500V 4.3A TO251-3
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.3A (Tc)
Rds On (Max) @ Id, Vgs: 950mOhm @ 1.2A, 13V
Power Dissipation (Max): 53W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 100µA
Supplier Device Package: PG-TO251-3
Drive Voltage (Max Rds On, Min Rds On): 13V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 10.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 231 pF @ 100 V
auf Bestellung 119025 Stücke:
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1731+0.27 EUR
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IPI80N07S405AKSA1 IP%28B%2CI%2CP%2980N07S4-05_Rev1.0_07-14-14.pdf
Hersteller: Infineon Technologies
Description: MOSFET N-CH TO262-3
Packaging: Tube
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Part Status: Obsolete
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 11000 Stücke:
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Anzahl Preis
188+2.4 EUR
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SPI21N10 SPB21N10.pdf
SPI21N10
Hersteller: Infineon Technologies
Description: MOSFET N-CH 100V 21A TO262-3
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
Rds On (Max) @ Id, Vgs: 80mOhm @ 15A, 10V
Power Dissipation (Max): 90W (Tc)
Vgs(th) (Max) @ Id: 4V @ 44µA
Supplier Device Package: PG-TO262-3-1
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 38.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 865 pF @ 25 V
auf Bestellung 1193 Stücke:
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Anzahl Preis
490+1 EUR
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SPI15N65C3XKSA1 SPI15N65C3.pdf
SPI15N65C3XKSA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 650V 15A TO262-3
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 9.4A, 10V
Power Dissipation (Max): 156W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 675µA
Supplier Device Package: PG-TO262-3-1
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 25 V
auf Bestellung 833 Stücke:
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Anzahl Preis
177+2.57 EUR
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SPP03N60S5XKSA1 SPP03N60S5_Rev.2.4.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a304412b407950112b42c7ad9470b
SPP03N60S5XKSA1
Hersteller: Infineon Technologies
Description: LOW POWER_LEGACY
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.2A (Tc)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 2A, 10V
Power Dissipation (Max): 38W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 135µA
Supplier Device Package: PG-TO220-3-1
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 420 pF @ 25 V
auf Bestellung 50697 Stücke:
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Anzahl Preis
337+1.34 EUR
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SPB03N60C3ATMA1 SPB03N60C3_Rev.2.5.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a304412b407950112b42e517e49a0
SPB03N60C3ATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 650V 3.2A TO263-3
Packaging: Bulk
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.2A (Tc)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 2A, 10V
Power Dissipation (Max): 38W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 135µA
Supplier Device Package: PG-TO263-3-2
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 400 pF @ 25 V
auf Bestellung 11750 Stücke:
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Anzahl Preis
429+1.06 EUR
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TLE4276SVAKSA1 fundamentals-of-power-semiconductors
TLE4276SVAKSA1
Hersteller: Infineon Technologies
Description: IC REG LIN POS ADJ 400MA TO220-5
Packaging: Tube
Package / Case: TO-220-5
Output Type: Adjustable
Mounting Type: Through Hole
Current - Output: 400mA
Operating Temperature: -40°C ~ 150°C
Output Configuration: Positive
Current - Quiescent (Iq): 200 µA
Voltage - Input (Max): 40V
Number of Regulators: 1
Supplier Device Package: P-TO220-5-43
Voltage - Output (Max): 20V
Voltage - Output (Min/Fixed): 2.5V
Control Features: Inhibit
Part Status: Obsolete
PSRR: 54dB (100Hz)
Voltage Dropout (Max): 0.5V @ 250mA
Protection Features: Over Current, Over Temperature, Reverse Polarity, Short Circuit
Current - Supply (Max): 25 mA
Grade: Automotive
Qualification: AEC-Q100
auf Bestellung 5000 Stücke:
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Anzahl Preis
306+1.55 EUR
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IPS075N03LGAKMA1 IP%28D%2CS%2CF%2CU%29075N03L_G.pdf
IPS075N03LGAKMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 30V 50A TO251-3
Packaging: Tube
Package / Case: TO-251-3 Stub Leads, IPak
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 30A, 10V
Power Dissipation (Max): 47W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: PG-TO251-3-11
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 15 V
auf Bestellung 21184 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1217+0.41 EUR
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IPP90N06S404AKSA1 IPx90N06S4-04.pdf
IPP90N06S404AKSA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 60V 90A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 90A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 4V @ 90µA
Supplier Device Package: PG-TO220-3-1
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 128 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10400 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 14000 Stücke:
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Anzahl Preis
397+1.18 EUR
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CY7C4831-10AC CY7C4801%2C11%2C21%2C31%2C41%2C51.pdf
CY7C4831-10AC
Hersteller: Infineon Technologies
Description: IC SYNC FIFO 2KX9X2 64LQFP
Packaging: Bag
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Function: Synchronous
Memory Size: 36K (2K x 9 x 2)
Operating Temperature: 0°C ~ 70°C
Data Rate: 100MHz
Access Time: 8ns
Current - Supply (Max): 60mA
Supplier Device Package: 64-TQFP (14x14)
Bus Directional: Bi-Directional
Expansion Type: Depth, Width
Programmable Flags Support: Yes
Retransmit Capability: No
FWFT Support: No
Part Status: Obsolete
Voltage - Supply: 4.5 V ~ 5.5 V
DigiKey Programmable: Not Verified
auf Bestellung 269 Stücke:
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24+21.28 EUR
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FS150R07N3E4B11BOSA1 FS150R07N3E4_B11.pdf
FS150R07N3E4B11BOSA1
Hersteller: Infineon Technologies
Description: IGBT MOD 650V 150A 430W
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 150A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 150 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Power - Max: 430 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 9.3 nF @ 25 V
auf Bestellung 121 Stücke:
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Anzahl Preis
4+155.23 EUR
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IRFZ48VSPBF irfz48vspbf.pdf?fileId=5546d462533600a40153563ed0e42237
IRFZ48VSPBF
Hersteller: Infineon Technologies
Description: MOSFET N-CH 60V 72A D2PAK
Produkt ist nicht verfügbar
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IPB80N07S405ATMA1 IP%28B%2CI%2CP%2980N07S4-05_Rev1.0_07-14-14.pdf
Hersteller: Infineon Technologies
Description: MOSFET N-CH TO263-3
Packaging: Bulk
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Part Status: Obsolete
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 24755 Stücke:
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Anzahl Preis
188+2.4 EUR
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IPP65R600C6XKSA1 IPP65R600C6_2_0.pdf?folderId=db3a3043163797a6011637d4bae7003b&fileId=db3a30432ac1eb91012ac74e318c2c70
IPP65R600C6XKSA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 650V 7.3A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.3A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 2.1A, 10V
Power Dissipation (Max): 63W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 210µA
Supplier Device Package: PG-TO220-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 440 pF @ 100 V
auf Bestellung 165350 Stücke:
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462+1.02 EUR
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SKW20N60HSFKSA1 SKW20N60HS.pdf
SKW20N60HSFKSA1
Hersteller: Infineon Technologies
Description: IGBT NPT 600V 36A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 130 ns
Vce(on) (Max) @ Vge, Ic: 3.15V @ 15V, 20A
Supplier Device Package: PG-TO247-3-1
IGBT Type: NPT
Td (on/off) @ 25°C: 18ns/207ns
Switching Energy: 690µJ
Test Condition: 400V, 20A, 16Ohm, 15V
Gate Charge: 100 nC
Current - Collector (Ic) (Max): 36 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 80 A
Power - Max: 178 W
auf Bestellung 6440 Stücke:
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Anzahl Preis
106+4.27 EUR
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SPB100N06S2-05 SP%28B%2CP%29100N06S2-05.pdf
SPB100N06S2-05
Hersteller: Infineon Technologies
Description: MOSFET N-CH 55V 100A TO263-3
Packaging: Bulk
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 4.7mOhm @ 80A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PG-TO263-3-2
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6800 pF @ 25 V
auf Bestellung 1000 Stücke:
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Anzahl Preis
185+2.71 EUR
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TZ500N14KOFHPSA1 TZ500N.pdf
TZ500N14KOFHPSA1
Hersteller: Infineon Technologies
Description: SCR MODULE 1.4KV 1050A MODULE
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 125°C
Structure: Single
Current - Hold (Ih) (Max): 300 mA
Current - Gate Trigger (Igt) (Max): 250 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 17A @ 50Hz
Number of SCRs, Diodes: 1 SCR
Current - On State (It (AV)) (Max): 669 A
Voltage - Gate Trigger (Vgt) (Max): 2.2 V
Part Status: Obsolete
Current - On State (It (RMS)) (Max): 1050 A
Voltage - Off State: 1.4 kV
auf Bestellung 4 Stücke:
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Anzahl Preis
3+252.61 EUR
Mindestbestellmenge: 3
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SPI12N50C3XKSA1 SPx12N50C3.pdf
SPI12N50C3XKSA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 560V 11.6A TO262-3
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11.6A (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 7A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 500µA
Supplier Device Package: PG-TO262-3-1
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 560 V
Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 25 V
auf Bestellung 950 Stücke:
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Anzahl Preis
219+2.22 EUR
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CY24115SXC-2
CY24115SXC-2
Hersteller: Infineon Technologies
Description: IC CLOCK GENERATOR 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Output: Clock
Frequency - Max: 180.63MHz
Type: Clock Generator
Input: Clock
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 3.14V ~ 3.47V
Ratio - Input:Output: 1:1
Differential - Input:Output: No/No
Supplier Device Package: 8-SOIC
PLL: Yes
Divider/Multiplier: No/No
Part Status: Obsolete
Number of Circuits: 1
DigiKey Programmable: Not Verified
auf Bestellung 12898 Stücke:
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146+3.63 EUR
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CYD02S36V-167BBC CYDxxS36V_8.pdf
CYD02S36V-167BBC
Hersteller: Infineon Technologies
Description: IC SRAM 2MBIT PARALLEL 256FBGA
auf Bestellung 95 Stücke:
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Anzahl Preis
2+266.94 EUR
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CY7C0241-55AXI CY7C024%2CA%2C0241%2C%20CY7C025%2C0251.pdf
CY7C0241-55AXI
Hersteller: Infineon Technologies
Description: IC SRAM 72KBIT PARALLEL 100TQFP
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Memory Size: 72Kbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: SRAM - Dual Port, Asynchronous
Memory Format: SRAM
Supplier Device Package: 100-TQFP (14x14)
Write Cycle Time - Word, Page: 55ns
Memory Interface: Parallel
Access Time: 55 ns
Memory Organization: 4K x 18
DigiKey Programmable: Not Verified
auf Bestellung 423 Stücke:
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18+27.83 EUR
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SDP06S60 SDP,SDT06S60.pdf
SDP06S60
Hersteller: Infineon Technologies
Description: DIODE SCHOTTKY 600V 6A TO220AB
auf Bestellung 418 Stücke:
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CY2DM1502ZXC ?utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
CY2DM1502ZXC
Hersteller: Infineon Technologies
Description: IC CLK BUFFER 1:2 1.5GHZ 8TSSOP
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65+7.76 EUR
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CY7C25682KV18-500BZC Infineon-CY7C25682KV18_CY7C25702KV18_72-Mbit_DDR_II+_SRAM_Two-Word_Burst_Architecture_(2.5_Cycle_Read_Latency)_with_ODT-DataSheet-v07_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebde66630e8&utm_source=cypress&utm_medium=referral&ut
CY7C25682KV18-500BZC
Hersteller: Infineon Technologies
Description: IC SRAM 72MBIT PARALLEL 165FBGA
auf Bestellung 243 Stücke:
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Anzahl Preis
2+525.05 EUR
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CY2308ESXC-2 CY2308.pdf
CY2308ESXC-2
Hersteller: Infineon Technologies
Description: IC FANOUT BUFFER 16SOIC
Packaging: Tube
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Output: LVCMOS
Frequency - Max: 133.3MHz
Type: Fanout Buffer (Distribution), Zero Delay Buffer
Input: LVCMOS, LVTTL
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 3V ~ 3.6V
Ratio - Input:Output: 1:8
Differential - Input:Output: No/No
Supplier Device Package: 16-SOIC
PLL: Yes
Divider/Multiplier: Yes/Yes
Part Status: Obsolete
Number of Circuits: 1
DigiKey Programmable: Not Verified
auf Bestellung 293 Stücke:
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Anzahl Preis
145+3.64 EUR
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IPP100N04S2L03AKSA2 Infineon-IPP_B100N04S2L-DS-v01_00-en.pdf?fileId=db3a304412b407950112b42b9443455d&ack=t
IPP100N04S2L03AKSA2
Hersteller: Infineon Technologies
Description: MOSFET N-CH 40V 100A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 3.3mOhm @ 80A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TO220-3-1
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 230 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6000 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 36500 Stücke:
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Anzahl Preis
172+2.71 EUR
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CY2DP818ZXC-2 CY2DP818-2.pdf
CY2DP818ZXC-2
Hersteller: Infineon Technologies
Description: IC CLK BUFFER 1:8 350MHZ 38TSSOP
Packaging: Tube
Package / Case: 38-TFSOP (0.173", 4.40mm Width)
Number of Circuits: 1
Mounting Type: Surface Mount
Output: LVPECL
Type: Fanout Buffer (Distribution)
Input: LVDS, LVPECL, LVTTL
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 3.135V ~ 3.465V
Ratio - Input:Output: 1:8
Differential - Input:Output: Yes/Yes
Supplier Device Package: 38-TSSOP
Frequency - Max: 350 MHz
auf Bestellung 5328 Stücke:
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Anzahl Preis
124+4.09 EUR
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