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TLE9210823QXAPPKITTOBO1 TLE9210823QXAPPKITTOBO1 Infineon Technologies TLE92108-23QX_APPKIT_Web.pdf Description: EVAL MOSFET DRVR TLE92018 MOTIX
Packaging: Box
Function: Gate Driver
Type: Power Management
Utilized IC / Part: TLE9210823
Supplied Contents: Board(s)
Part Status: Active
auf Bestellung 8 Stücke:
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1+88.35 EUR
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EVALM5E1B1245NSICTOBO1 EVALM5E1B1245NSICTOBO1 Infineon Technologies Infineon-EVAL-M5-E1B1245N-SiC-ApplicationNotes-v01_00-EN.pdf?fileId=5546d4626cb27db2016d438785217e27 Description: EVAL COOLSIC MOSFET MOTOR DRIVER
Packaging: Box
Function: Gate Driver
Type: Power Management
Contents: Board(s)
Utilized IC / Part: 1EDI20H12AH
Supplied Contents: Board(s)
Produkt ist nicht verfügbar
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TLE92108231QXXUMA1 TLE92108231QXXUMA1 Infineon Technologies Infineon-TLE92108-231QX-DataSheet-v01_00-EN.pdf?fileId=5546d462749a7c2d01749b323e140979 Description: IC GATE DRVR HALF-BRIDGE 48VFQFN
Packaging: Tape & Reel (TR)
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Voltage - Supply: 6V ~ 28V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 950 V
Supplier Device Package: PG-VQFN-48-31
Channel Type: Synchronous
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, N-Channel MOSFET
Current - Peak Output (Source, Sink): 100mA, 100mA
Part Status: Active
DigiKey Programmable: Not Verified
auf Bestellung 7500 Stücke:
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2500+3.10 EUR
5000+3.04 EUR
Mindestbestellmenge: 2500
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ICL5102HVXUMA1 ICL5102HVXUMA1 Infineon Technologies Infineon-ICL5102HV-DataSheet-v01_02-EN.pdf?fileId=5546d4626c1f3dc3016c70f543a736d6 Description: IC LED DRIVER OFFL NO 19DSO
Packaging: Tape & Reel (TR)
Package / Case: 20-SOIC (0.295", 7.50mm Width), 19 Leads
Mounting Type: Surface Mount
Number of Outputs: 1
Frequency: 1.3MHz
Type: AC DC Offline Switcher
Operating Temperature: -40°C ~ 150°C (TJ)
Applications: Lighting
Internal Switch(s): No
Topology: Half-Bridge
Supplier Device Package: PG-DSO-19-1
Dimming: No
Voltage - Supply (Min): 8.5V
Voltage - Supply (Max): 18V
Part Status: Active
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
1000+2.56 EUR
Mindestbestellmenge: 1000
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TLD22522EPXUMA1 TLD22522EPXUMA1 Infineon Technologies Infineon-TLD2252-2EP-DataSheet-v01_00-EN.pdf?fileId=5546d4626da6c043016dba1517ee6995 Description: IC LED DRVR CTRLR PWM 14TSDSO
Packaging: Tape & Reel (TR)
Package / Case: 14-TSSOP (0.154", 3.90mm Width) Exposed Pad
Mounting Type: Surface Mount
Number of Outputs: 2
Type: DC DC Controller
Operating Temperature: -40°C ~ 150°C (TJ)
Applications: Lighting
Current - Output / Channel: 120mA
Internal Switch(s): No
Topology: Switched Capacitor (Charge Pump)
Supplier Device Package: PG-TSDSO-14
Dimming: PWM
Voltage - Supply (Min): 8.5V
Voltage - Supply (Max): 18V
Grade: Automotive
Produkt ist nicht verfügbar
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TLD22522EPXUMA1 TLD22522EPXUMA1 Infineon Technologies Infineon-TLD2252-2EP-DataSheet-v01_00-EN.pdf?fileId=5546d4626da6c043016dba1517ee6995 Description: IC LED DRVR CTRLR PWM 14TSDSO
Packaging: Cut Tape (CT)
Package / Case: 14-TSSOP (0.154", 3.90mm Width) Exposed Pad
Mounting Type: Surface Mount
Number of Outputs: 2
Type: DC DC Controller
Operating Temperature: -40°C ~ 150°C (TJ)
Applications: Lighting
Current - Output / Channel: 120mA
Internal Switch(s): No
Topology: Switched Capacitor (Charge Pump)
Supplier Device Package: PG-TSDSO-14
Dimming: PWM
Voltage - Supply (Min): 8.5V
Voltage - Supply (Max): 18V
Grade: Automotive
auf Bestellung 2950 Stücke:
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8+2.43 EUR
10+1.77 EUR
25+1.60 EUR
100+1.42 EUR
250+1.34 EUR
500+1.28 EUR
1000+1.24 EUR
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ICL5102HVXUMA1 ICL5102HVXUMA1 Infineon Technologies Infineon-ICL5102HV-DataSheet-v01_02-EN.pdf?fileId=5546d4626c1f3dc3016c70f543a736d6 Description: IC LED DRIVER OFFL NO 19DSO
Packaging: Cut Tape (CT)
Package / Case: 20-SOIC (0.295", 7.50mm Width), 19 Leads
Mounting Type: Surface Mount
Number of Outputs: 1
Frequency: 1.3MHz
Type: AC DC Offline Switcher
Operating Temperature: -40°C ~ 150°C (TJ)
Applications: Lighting
Internal Switch(s): No
Topology: Half-Bridge
Supplier Device Package: PG-DSO-19-1
Dimming: No
Voltage - Supply (Min): 8.5V
Voltage - Supply (Max): 18V
Part Status: Active
auf Bestellung 3950 Stücke:
Lieferzeit 10-14 Tag (e)
4+5.26 EUR
10+3.95 EUR
25+3.62 EUR
100+3.26 EUR
250+3.09 EUR
500+2.99 EUR
Mindestbestellmenge: 4
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IRAUDAMP23 IRAUDAMP23 Infineon Technologies Infineon-IRAUDAMP23-DataSheet-v01_00-EN.pdf?fileId=5546d462677d0f4601679746020259b4 Description: EVAL BOARD FOR IRS2452AM
Packaging: Box
Output Type: 2-Channel (Stereo)
Amplifier Type: Class D
Voltage - Supply: ±80V ~ 160V
Max Output Power x Channels @ Load: 600W x 2 @ 20Ohm
Board Type: Fully Populated
Utilized IC / Part: IRS2452AM
Supplied Contents: Board(s)
Part Status: Active
Contents: Board(s)
auf Bestellung 3 Stücke:
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1+448.59 EUR
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TLE5014SP16E0002XUMA1 TLE5014SP16E0002XUMA1 Infineon Technologies Infineon-TLE5014SP16%20E0002-DataSheet-v01_01-EN.pdf?fileId=5546d4626eab8fbf016ed1115f552acc Description: GMR-BASED ANGLE SENSOR
Packaging: Tape & Reel (TR)
Package / Case: 16-TSSOP (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Output: Wheatstone Bridge
Operating Temperature: -40°C ~ 125°C (TA)
Termination Style: Gull Wing
Voltage - Supply: 3V ~ 5.5V
Actuator Type: External Magnet, Not Included
Technology: Magnetoresistive
For Measuring: Angle
Supplier Device Package: PG-TDSO-16-1
Rotation Angle - Electrical, Mechanical: 0° ~ 360°, Continuous
Output Signal: Cosine, Sine
Part Status: Active
Grade: Automotive
Qualification: AEC-Q100
Produkt ist nicht verfügbar
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TLE5014SP16E0001XUMA1 TLE5014SP16E0001XUMA1 Infineon Technologies Infineon-TLE5014SP16%20E0001-DataSheet-v01_01-EN.pdf?fileId=5546d4626eab8fbf016ed1116a022ad0 Description: GMR-BASED ANGLE SENSOR
Packaging: Tape & Reel (TR)
Package / Case: 16-TSSOP (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Output: Wheatstone Bridge
Operating Temperature: -40°C ~ 125°C (TA)
Termination Style: Gull Wing
Voltage - Supply: 3V ~ 5.5V
Actuator Type: External Magnet, Not Included
Technology: Magnetoresistive
For Measuring: Angle
Supplier Device Package: PG-TDSO-16-1
Rotation Angle - Electrical, Mechanical: 0° ~ 360°, Continuous
Output Signal: Cosine, Sine
Part Status: Active
Produkt ist nicht verfügbar
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TLE5014SP16E0001XUMA1 TLE5014SP16E0001XUMA1 Infineon Technologies Infineon-TLE5014SP16%20E0001-DataSheet-v01_01-EN.pdf?fileId=5546d4626eab8fbf016ed1116a022ad0 Description: GMR-BASED ANGLE SENSOR
Packaging: Cut Tape (CT)
Package / Case: 16-TSSOP (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Output: Wheatstone Bridge
Operating Temperature: -40°C ~ 125°C (TA)
Termination Style: Gull Wing
Voltage - Supply: 3V ~ 5.5V
Actuator Type: External Magnet, Not Included
Technology: Magnetoresistive
For Measuring: Angle
Supplier Device Package: PG-TDSO-16-1
Rotation Angle - Electrical, Mechanical: 0° ~ 360°, Continuous
Output Signal: Cosine, Sine
Part Status: Active
auf Bestellung 138 Stücke:
Lieferzeit 10-14 Tag (e)
3+6.60 EUR
5+5.91 EUR
10+5.65 EUR
25+5.35 EUR
50+5.14 EUR
100+4.95 EUR
Mindestbestellmenge: 3
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TLE5014SP16E0002XUMA1 TLE5014SP16E0002XUMA1 Infineon Technologies Infineon-TLE5014SP16%20E0002-DataSheet-v01_01-EN.pdf?fileId=5546d4626eab8fbf016ed1115f552acc Description: GMR-BASED ANGLE SENSOR
Packaging: Cut Tape (CT)
Package / Case: 16-TSSOP (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Output: Wheatstone Bridge
Operating Temperature: -40°C ~ 125°C (TA)
Termination Style: Gull Wing
Voltage - Supply: 3V ~ 5.5V
Actuator Type: External Magnet, Not Included
Technology: Magnetoresistive
For Measuring: Angle
Supplier Device Package: PG-TDSO-16-1
Rotation Angle - Electrical, Mechanical: 0° ~ 360°, Continuous
Output Signal: Cosine, Sine
Part Status: Active
Grade: Automotive
Qualification: AEC-Q100
auf Bestellung 183 Stücke:
Lieferzeit 10-14 Tag (e)
3+7.23 EUR
5+6.49 EUR
10+6.21 EUR
25+5.88 EUR
50+5.66 EUR
100+5.45 EUR
Mindestbestellmenge: 3
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BSC0403NSATMA1 BSC0403NSATMA1 Infineon Technologies Infineon-BSC0403NS-DataSheet-v02_01-EN.pdf?fileId=5546d462700c0ae6017015dda00a2215 Description: 150V, N-CH MOSFET, LOGIC LEVEL,
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Rds On (Max) @ Id, Vgs: 11mOhm @ 35A, 10
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 4.6V @ 91µA
Supplier Device Package: PG-TDSON-8-7
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 75 V
Produkt ist nicht verfügbar
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XDPS21071XUMA1 XDPS21071XUMA1 Infineon Technologies Infineon-XDPS21071-DataSheet-v01_00-EN.pdf?fileId=5546d4626e41e490016e632b3d382b14 Description: DIGITAL FFR CONTROLLER, DSO12
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.154", 3.90mm Width), 12 Leads
Output Type: Transistor Driver
Mounting Type: Surface Mount
Function: Step-Up/Step-Down
Operating Temperature: -25°C ~ 125°C (TJ)
Output Configuration: Positive
Frequency - Switching: 24.9kHz ~ 139.4kHz
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 3.3V
Supplier Device Package: PG-DSO-12-20
Synchronous Rectifier: No
Control Features: Current Limit, Soft Start
Output Phases: 1
Clock Sync: No
Number of Outputs: 1
Produkt ist nicht verfügbar
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REF_XDPS21071_45W1 REF_XDPS21071_45W1 Infineon Technologies Infineon-referencedesign_REF_XDPS21071_45W1-ApplicationNotes-v01_00-EN.pdf?fileId=5546d4626f229553016f9f594a4d19ee&redirId=121668 Description: 45W USB-PD 3.0 TYPE C CHARGER
auf Bestellung 1 Stücke:
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IPAN70R360P7SAUMA1 Infineon Technologies Infineon-IPAN70R360P7S-DS-v02_01-EN.pdf?fileId=5546d4625acbae4c015ad1977e2820c3 Description: 700V, N-CH MOSFET, TO220 FULLPAK
Produkt ist nicht verfügbar
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IMZA65R048M1HXKSA1 IMZA65R048M1HXKSA1 Infineon Technologies Infineon-IMZA65R048M1H-DataSheet-v02_00-EN.pdf?fileId=5546d4626f229553016f85d9ac090535 Description: MOSFET 650V NCH SIC TRENCH
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 39A (Tc)
Rds On (Max) @ Id, Vgs: 64mOhm @ 20.1A, 18V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 5.7V @ 6mA
Supplier Device Package: PG-TO247-4-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +23V, -5V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1118 pF @ 400 V
auf Bestellung 416 Stücke:
Lieferzeit 10-14 Tag (e)
2+15.14 EUR
30+8.92 EUR
120+7.59 EUR
Mindestbestellmenge: 2
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IPAN60R360PFD7SXKSA1 IPAN60R360PFD7SXKSA1 Infineon Technologies Infineon-IPAN60R360PFD7S-DataSheet-v02_01-EN.pdf?fileId=5546d4626df6ee62016e225ddfd96741 Description: MOSFET N-CH 650V 10A TO220
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 360mOhm @ 2.9A, 10V
Power Dissipation (Max): 23W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 140µA
Supplier Device Package: PG-TO220-FP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 12.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 534 pF @ 400 V
auf Bestellung 528 Stücke:
Lieferzeit 10-14 Tag (e)
8+2.36 EUR
50+1.29 EUR
100+1.19 EUR
500+0.94 EUR
Mindestbestellmenge: 8
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IMW65R048M1HXKSA1 IMW65R048M1HXKSA1 Infineon Technologies Infineon-IMW65R048M1H-DataSheet-v02_00-EN.pdf?fileId=5546d4626f229553016f85b4a66c0466 Description: MOSFET 650V NCH SIC TRENCH
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 39A (Tc)
Rds On (Max) @ Id, Vgs: 64mOhm @ 20.1A, 18V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 5.7V @ 6mA
Supplier Device Package: PG-TO247-3-41
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +23V, -5V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1118 pF @ 400 V
auf Bestellung 907 Stücke:
Lieferzeit 10-14 Tag (e)
2+14.91 EUR
30+8.78 EUR
120+7.45 EUR
510+7.23 EUR
Mindestbestellmenge: 2
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IPS60R600PFD7SAKMA1 IPS60R600PFD7SAKMA1 Infineon Technologies Infineon-IPS60R600PFD7S-DataSheet-v02_00-EN.pdf?fileId=5546d4626df6ee62016e2294e27e6797 Description: MOSFET N-CH 650V 6A TO251-3
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 1.7A, 10V
Power Dissipation (Max): 31W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 80µA
Supplier Device Package: PG-TO251-3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 8.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 344 pF @ 400 V
Produkt ist nicht verfügbar
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IPD60R280PFD7SAUMA1 IPD60R280PFD7SAUMA1 Infineon Technologies Infineon-IPD60R280PFD7S-DataSheet-v02_00-EN.pdf?fileId=5546d4626df6ee62016e22702a14674d Description: MOSFET N-CH 600V 12A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 3.6A, 10V
Power Dissipation (Max): 51W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 180µA
Supplier Device Package: PG-TO252-3-344
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 15.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 656 pF @ 400 V
Produkt ist nicht verfügbar
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IMW65R107M1HXKSA1 IMW65R107M1HXKSA1 Infineon Technologies Infineon-IMW65R107M1H-DataSheet-v02_00-EN.pdf?fileId=5546d4626f229553016f85d01cd50485 Description: MOSFET 650V NCH SIC TRENCH
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 142mOhm @ 8.9A, 18V
Power Dissipation (Max): 75W (Tc)
Vgs(th) (Max) @ Id: 5.7V @ 3mA
Supplier Device Package: PG-TO247-3-41
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +23V, -5V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 496 pF @ 400 V
auf Bestellung 467 Stücke:
Lieferzeit 10-14 Tag (e)
2+10.93 EUR
30+6.22 EUR
120+5.25 EUR
Mindestbestellmenge: 2
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IPS60R1K0PFD7SAKMA1 IPS60R1K0PFD7SAKMA1 Infineon Technologies Infineon-IPS60R1K0PFD7S-DataSheet-v02_00-EN.pdf?fileId=5546d4626df6ee62016e2282a4c8675c Description: MOSFET N-CH 650V 4.7A TO251-3
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.7A (Tc)
Rds On (Max) @ Id, Vgs: 1Ohm @ 1A, 10V
Power Dissipation (Max): 26W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 50µA
Supplier Device Package: PG-TO251-3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 230 pF @ 400 V
Produkt ist nicht verfügbar
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IMZA65R072M1HXKSA1 IMZA65R072M1HXKSA1 Infineon Technologies Infineon-IMZA65R072M1H-DataSheet-v02_00-EN.pdf?fileId=5546d4626f229553016f85e97cf305b9 Description: MOSFET 650V NCH SIC TRENCH
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
Rds On (Max) @ Id, Vgs: 94mOhm @ 13.3A, 18V
Power Dissipation (Max): 96W (Tc)
Vgs(th) (Max) @ Id: 5.7V @ 4mA
Supplier Device Package: PG-TO247-4-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +23V, -5V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 744 pF @ 400 V
auf Bestellung 169 Stücke:
Lieferzeit 10-14 Tag (e)
2+12.64 EUR
30+7.28 EUR
120+6.17 EUR
Mindestbestellmenge: 2
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IMW65R027M1HXKSA1 IMW65R027M1HXKSA1 Infineon Technologies Infineon-IMW65R027M1H-DataSheet-v02_00-EN.pdf?fileId=5546d4626f229553016f85ab88170463 Description: MOSFET 650V NCH SIC TRENCH
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 47A (Tc)
Rds On (Max) @ Id, Vgs: 34mOhm @ 38.3A, 18V
Power Dissipation (Max): 189W (Tc)
Vgs(th) (Max) @ Id: 5.7V @ 11mA
Supplier Device Package: PG-TO247-3-41
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +23V, -5V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 2131 pF @ 400 V
auf Bestellung 505 Stücke:
Lieferzeit 10-14 Tag (e)
1+20.12 EUR
30+12.21 EUR
120+10.47 EUR
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IPAN60R125PFD7SXKSA1 IPAN60R125PFD7SXKSA1 Infineon Technologies Infineon-IPAN60R125PFD7S-DataSheet-v02_01-EN.pdf?fileId=5546d4626df6ee62016e224bf53a667c Description: MOSFET N-CH 650V 25A TO220
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Rds On (Max) @ Id, Vgs: 125mOhm @ 7.8A, 10V
Power Dissipation (Max): 32W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 390µA
Supplier Device Package: PG-TO220-FP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1503 pF @ 400 V
auf Bestellung 233 Stücke:
Lieferzeit 10-14 Tag (e)
5+4.29 EUR
50+2.33 EUR
100+2.24 EUR
Mindestbestellmenge: 5
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IPP60R022S7XKSA1 IPP60R022S7XKSA1 Infineon Technologies Infineon-IPP60R022S7-DataSheet-v02_01-EN.pdf?fileId=5546d4626bb628d7016bc25d1085779d Description: MOSFET N-CH 600V 23A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 23A (Tc)
Rds On (Max) @ Id, Vgs: 22mOhm @ 23A, 12V
Power Dissipation (Max): 390W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1.44mA
Supplier Device Package: PG-TO220-3-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 12 V
Input Capacitance (Ciss) (Max) @ Vds: 5639 pF @ 300 V
auf Bestellung 592 Stücke:
Lieferzeit 10-14 Tag (e)
2+16.07 EUR
50+8.80 EUR
100+8.38 EUR
500+7.90 EUR
Mindestbestellmenge: 2
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IPD60R360PFD7SAUMA1 IPD60R360PFD7SAUMA1 Infineon Technologies Infineon-IPD60R360PFD7S-DataSheet-v02_00-EN.pdf?fileId=5546d4626df6ee62016e227958cc6750 Description: MOSFET N-CH 600V 10A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 360mOhm @ 2.9A, 10V
Power Dissipation (Max): 43W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 140µA
Supplier Device Package: PG-TO252-3-344
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 12.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 534 pF @ 400 V
Produkt ist nicht verfügbar
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IPN60R2K0PFD7SATMA1 IPN60R2K0PFD7SATMA1 Infineon Technologies Infineon-IPN60R2K0PFD7S-DataSheet-v02_00-EN.pdf?fileId=5546d4626df6ee62016e22827e126756 Description: MOSFET N-CH 600V 3A SOT223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-3
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
Rds On (Max) @ Id, Vgs: 2Ohm @ 500mA, 10V
Power Dissipation (Max): 6W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 30µA
Supplier Device Package: PG-SOT223-3-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 3.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 134 pF @ 400 V
auf Bestellung 15000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.38 EUR
6000+0.35 EUR
9000+0.34 EUR
15000+0.32 EUR
Mindestbestellmenge: 3000
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IPS60R360PFD7SAKMA1 IPS60R360PFD7SAKMA1 Infineon Technologies Infineon-IPS60R360PFD7S-DataSheet-v02_00-EN.pdf?fileId=5546d4626df6ee62016e2294ceeb6794 Description: MOSFET N-CH 650V 10A TO251-3
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 360mOhm @ 2.9A, 10V
Power Dissipation (Max): 43W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 140µA
Supplier Device Package: PG-TO251-3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 12.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 534 pF @ 400 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPN60R360PFD7SATMA1 IPN60R360PFD7SATMA1 Infineon Technologies Infineon-IPN60R360PFD7S-DataSheet-v02_00-EN.pdf?fileId=5546d4626df6ee62016e228292226759 Description: MOSFET N-CH 600V 10A SOT223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-3
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 360mOhm @ 2.9A, 10V
Power Dissipation (Max): 7W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 140µA
Supplier Device Package: PG-SOT223-3-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 12.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 534 pF @ 400 V
auf Bestellung 9000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.57 EUR
Mindestbestellmenge: 3000
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IMZA65R107M1HXKSA1 IMZA65R107M1HXKSA1 Infineon Technologies Infineon-IMZA65R107M1H-DataSheet-v02_00-EN.pdf?fileId=5546d4626f229553016f859930890460 Description: MOSFET 650V NCH SIC TRENCH
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 142mOhm @ 8.9A, 18V
Power Dissipation (Max): 75W (Tc)
Vgs(th) (Max) @ Id: 5.7V @ 3mA
Supplier Device Package: PG-TO247-3-41
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +23V, -5V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 496 pF @ 400 V
auf Bestellung 236 Stücke:
Lieferzeit 10-14 Tag (e)
2+10.98 EUR
30+6.31 EUR
120+5.28 EUR
Mindestbestellmenge: 2
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IPS60R210PFD7SAKMA1 IPS60R210PFD7SAKMA1 Infineon Technologies Infineon-IPS60R210PFD7S-DataSheet-v02_00-EN.pdf?fileId=5546d4626df6ee62016e228bcd866791 Description: MOSFET N-CH 650V 16A TO251-3
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Rds On (Max) @ Id, Vgs: 210mOhm @ 4.9A, 10V
Power Dissipation (Max): 64W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 240µA
Supplier Device Package: PG-TO251-3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1015 pF @ 400 V
Produkt ist nicht verfügbar
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IPT60R065S7XTMA1 IPT60R065S7XTMA1 Infineon Technologies Infineon-IPT60R065S7-DataSheet-v02_01-EN.pdf?fileId=5546d4626bb628d7016bc253e7b6779a Description: MOSFET N-CH 600V 8A 8HSOF
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 65mOhm @ 8A, 12V
Power Dissipation (Max): 167W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 490µA
Supplier Device Package: PG-HSOF-8-2
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 12 V
Input Capacitance (Ciss) (Max) @ Vds: 1932 pF @ 300 V
Produkt ist nicht verfügbar
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IMZA65R027M1HXKSA1 IMZA65R027M1HXKSA1 Infineon Technologies Infineon-IMZA65R027M1H-DataSheet-v02_00-EN.pdf?fileId=5546d4626f229553016f85d997f90532 Description: MOSFET 650V NCH SIC TRENCH
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 59A (Tc)
Rds On (Max) @ Id, Vgs: 34mOhm @ 38.3A, 18V
Power Dissipation (Max): 189W (Tc)
Vgs(th) (Max) @ Id: 5.7V @ 11mA
Supplier Device Package: PG-TO247-4-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +23V, -5V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 2131 pF @ 400 V
auf Bestellung 266 Stücke:
Lieferzeit 10-14 Tag (e)
1+25.56 EUR
30+15.75 EUR
120+13.99 EUR
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IPN60R360PFD7SATMA1 IPN60R360PFD7SATMA1 Infineon Technologies Infineon-IPN60R360PFD7S-DataSheet-v02_00-EN.pdf?fileId=5546d4626df6ee62016e228292226759 Description: MOSFET N-CH 600V 10A SOT223
Packaging: Cut Tape (CT)
Package / Case: TO-261-3
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 360mOhm @ 2.9A, 10V
Power Dissipation (Max): 7W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 140µA
Supplier Device Package: PG-SOT223-3-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 12.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 534 pF @ 400 V
auf Bestellung 12166 Stücke:
Lieferzeit 10-14 Tag (e)
16+1.11 EUR
100+0.87 EUR
500+0.80 EUR
1000+0.71 EUR
Mindestbestellmenge: 16
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IPD60R360PFD7SAUMA1 IPD60R360PFD7SAUMA1 Infineon Technologies Infineon-IPD60R360PFD7S-DataSheet-v02_00-EN.pdf?fileId=5546d4626df6ee62016e227958cc6750 Description: MOSFET N-CH 600V 10A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 360mOhm @ 2.9A, 10V
Power Dissipation (Max): 43W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 140µA
Supplier Device Package: PG-TO252-3-344
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 12.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 534 pF @ 400 V
auf Bestellung 2343 Stücke:
Lieferzeit 10-14 Tag (e)
14+1.32 EUR
18+1.02 EUR
100+0.86 EUR
500+0.83 EUR
1000+0.78 EUR
Mindestbestellmenge: 14
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IPT60R065S7XTMA1 IPT60R065S7XTMA1 Infineon Technologies Infineon-IPT60R065S7-DataSheet-v02_01-EN.pdf?fileId=5546d4626bb628d7016bc253e7b6779a Description: MOSFET N-CH 600V 8A 8HSOF
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 65mOhm @ 8A, 12V
Power Dissipation (Max): 167W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 490µA
Supplier Device Package: PG-HSOF-8-2
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 12 V
Input Capacitance (Ciss) (Max) @ Vds: 1932 pF @ 300 V
Produkt ist nicht verfügbar
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IPD60R280PFD7SAUMA1 IPD60R280PFD7SAUMA1 Infineon Technologies Infineon-IPD60R280PFD7S-DataSheet-v02_00-EN.pdf?fileId=5546d4626df6ee62016e22702a14674d Description: MOSFET N-CH 600V 12A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 3.6A, 10V
Power Dissipation (Max): 51W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 180µA
Supplier Device Package: PG-TO252-3-344
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 15.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 656 pF @ 400 V
auf Bestellung 2876 Stücke:
Lieferzeit 10-14 Tag (e)
7+2.83 EUR
10+1.90 EUR
100+1.33 EUR
500+1.08 EUR
1000+0.98 EUR
Mindestbestellmenge: 7
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IPN60R2K0PFD7SATMA1 IPN60R2K0PFD7SATMA1 Infineon Technologies Infineon-IPN60R2K0PFD7S-DataSheet-v02_00-EN.pdf?fileId=5546d4626df6ee62016e22827e126756 Description: MOSFET N-CH 600V 3A SOT223
Packaging: Cut Tape (CT)
Package / Case: TO-261-3
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
Rds On (Max) @ Id, Vgs: 2Ohm @ 500mA, 10V
Power Dissipation (Max): 6W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 30µA
Supplier Device Package: PG-SOT223-3-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 3.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 134 pF @ 400 V
auf Bestellung 15168 Stücke:
Lieferzeit 10-14 Tag (e)
12+1.57 EUR
18+0.98 EUR
100+0.64 EUR
500+0.49 EUR
1000+0.44 EUR
Mindestbestellmenge: 12
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FR900R12IP4DBPSA1 FR900R12IP4DBPSA1 Infineon Technologies Infineon-FR900R12IP4D-DataSheet-v03_00-EN.pdf?fileId=5546d4626c1f3dc3016cae709c2a37eb Description: IGBT MODULE PP IHM I XHP 1 7KV
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Dual Brake Chopper
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 900A
NTC Thermistor: Yes
Supplier Device Package: AG-PRIME3-1
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 900 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 54 nF @ 25 V
auf Bestellung 2 Stücke:
Lieferzeit 10-14 Tag (e)
1+1858.37 EUR
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IDK20G120C5XTMA1 IDK20G120C5XTMA1 Infineon Technologies Infineon-IDK20G120C5-DataSheet-v02_01-EN.pdf?fileId=5546d4626df6ee62016e3bf103270f47 Description: DIODE SIC 1.2KV 56A PGTO26321
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 1050pF @ 1V, 1MHz
Current - Average Rectified (Io): 56A
Supplier Device Package: PG-TO263-2-1
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 20 A
Current - Reverse Leakage @ Vr: 123 µA @ 1200 V
Produkt ist nicht verfügbar
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IDK20G120C5XTMA1 IDK20G120C5XTMA1 Infineon Technologies Infineon-IDK20G120C5-DataSheet-v02_01-EN.pdf?fileId=5546d4626df6ee62016e3bf103270f47 Description: DIODE SIC 1.2KV 56A PGTO26321
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 1050pF @ 1V, 1MHz
Current - Average Rectified (Io): 56A
Supplier Device Package: PG-TO263-2-1
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 20 A
Current - Reverse Leakage @ Vr: 123 µA @ 1200 V
auf Bestellung 327 Stücke:
Lieferzeit 10-14 Tag (e)
2+14.12 EUR
10+9.63 EUR
100+7.10 EUR
Mindestbestellmenge: 2
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F3L200R07W2S5FB11BOMA1 F3L200R07W2S5FB11BOMA1 Infineon Technologies Infineon-F3L200R07W2S5F_B11-DataSheet-v03_00-EN.pdf?fileId=5546d46272e49d2a01734dfbd7647113 Description: IGBT MODULE LOW POWER EASY
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Level Inverter
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.38V @ 15V, 100A
NTC Thermistor: Yes
Supplier Device Package: AG-EASY2B
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 95 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 14.3 nF @ 25 V
Produkt ist nicht verfügbar
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FS3L40R07W2H5FB11BOMA1 FS3L40R07W2H5FB11BOMA1 Infineon Technologies Infineon-FS3L40R07W2H5F_B11-DataSheet-v03_00-EN.pdf?fileId=5546d4626c1f3dc3016c850552697db5 Description: IGBT MODULE LOW POWER EASY
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.81V @ 15V, 20A
NTC Thermistor: Yes
Supplier Device Package: AG-EASY2B-2
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 18 µA
Input Capacitance (Cies) @ Vce: 2 nF @ 25 V
Produkt ist nicht verfügbar
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FP10R12W1T7B3BOMA1 FP10R12W1T7B3BOMA1 Infineon Technologies Infineon-FP10R12W1T7_B3-DataSheet-v00_10-EN.pdf?fileId=5546d46270c4f93e0170f1856f6372d4 Description: IGBT MODULE LOW POWER EASY
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Three Phase Bridge Rectifier
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.6V @ 15V, 10A (Typ)
NTC Thermistor: Yes
Supplier Device Package: AG-EASY1B-2
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 4.5 µA
Input Capacitance (Cies) @ Vce: 1.89 nF @ 25 V
auf Bestellung 11 Stücke:
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DF150R12W1H3FB11BOMA1 DF150R12W1H3FB11BOMA1 Infineon Technologies Description: IGBT MODULE LOW POWER EASY
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1ED44175N01BXTSA1 1ED44175N01BXTSA1 Infineon Technologies Infineon-1ED44175N01B-DataSheet-v01_00-EN.pdf?fileId=5546d4626df6ee62016e3bf0b3230f35 Description: IC GATE DRVR LOW-SIDE SOT23-6
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 12.7V ~ 20V
Input Type: Non-Inverting
Supplier Device Package: PG-SOT23-6-3
Rise / Fall Time (Typ): 5ns, 5ns
Channel Type: Single
Driven Configuration: Low-Side
Number of Drivers: 1
Gate Type: IGBT, N-Channel MOSFET
Logic Voltage - VIL, VIH: 1.2V, 1.9V
Current - Peak Output (Source, Sink): 2.6A, 2.6A
Part Status: Active
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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IM240S6Y1BAKMA1 IM240S6Y1BAKMA1 Infineon Technologies Infineon-IM240-DataSheet-v02_03-EN.pdf?fileId=5546d4626fc1ce0b016ff190f50445ea Description: CIPOS MICRO
auf Bestellung 235 Stücke:
Lieferzeit 10-14 Tag (e)
2+16.26 EUR
10+14.69 EUR
25+14.00 EUR
100+12.16 EUR
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FS50R12W1T7B11BOMA1 FS50R12W1T7B11BOMA1 Infineon Technologies Infineon-FS50R12W1T7_B11-DataSheet-v02_00-EN.pdf?fileId=5546d46270c4f93e0170f18717047301 Description: IGBT MODULE LOW POWER EASY
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 175°C
NTC Thermistor: No
Supplier Device Package: Module
Part Status: Active
Current - Collector (Ic) (Max): 50 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Cutoff (Max): 7.9 µA
Input Capacitance (Cies) @ Vce: 11.1 nF @ 25 V
auf Bestellung 48 Stücke:
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1+76.86 EUR
24+54.70 EUR
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1ED44175N01BXTSA1 1ED44175N01BXTSA1 Infineon Technologies Infineon-1ED44175N01B-DataSheet-v01_00-EN.pdf?fileId=5546d4626df6ee62016e3bf0b3230f35 Description: IC GATE DRVR LOW-SIDE SOT23-6
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 12.7V ~ 20V
Input Type: Non-Inverting
Supplier Device Package: PG-SOT23-6-3
Rise / Fall Time (Typ): 5ns, 5ns
Channel Type: Single
Driven Configuration: Low-Side
Number of Drivers: 1
Gate Type: IGBT, N-Channel MOSFET
Logic Voltage - VIL, VIH: 1.2V, 1.9V
Current - Peak Output (Source, Sink): 2.6A, 2.6A
Part Status: Active
DigiKey Programmable: Not Verified
auf Bestellung 2790 Stücke:
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11+1.60 EUR
16+1.15 EUR
25+1.04 EUR
100+0.92 EUR
250+0.86 EUR
500+0.82 EUR
1000+0.79 EUR
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TLE4929CXVAM18NAHAMA1 TLE4929CXVAM18NAHAMA1 Infineon Technologies Infineon-TLE4929C-DataSheet-v01_10-EN.pdf?fileId=5546d46265257de8016537ce85935e53 Description: IC SPEED SENSOR SSO-3
Features: Programmable, Temperature Compensated
Packaging: Tape & Box (TB)
Package / Case: 3-SIP Module
Output Type: Open Drain
Mounting Type: Through Hole
Axis: Single
Operating Temperature: -40°C ~ 175°C (TJ)
Voltage - Supply: 4V ~ 16V
Technology: Hall Effect
Resolution: 16 b
Sensing Range: ±120mT
Current - Output (Max): 15mA
Current - Supply (Max): 13.4mA
Supplier Device Package: PG-SSO-3-52
Grade: Automotive
Qualification: AEC-Q100
auf Bestellung 1500 Stücke:
Lieferzeit 10-14 Tag (e)
1500+4.56 EUR
Mindestbestellmenge: 1500
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BSC0923NDIATMA1 BSC0923NDIATMA1 Infineon Technologies Infineon-BSC0923NDI-DS-v02_00-en.pdf?fileId=db3a304336ca04c90136caa90c9e00b6 Description: MOSFET 2N-CH 30V 17A/32A TISON8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Asymmetrical
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 17A, 32A
Input Capacitance (Ciss) (Max) @ Vds: 1160pF @ 15V
Rds On (Max) @ Id, Vgs: 5mOhm @ 20A, 10V
Gate Charge (Qg) (Max) @ Vgs: 10nC @ 4.5V
FET Feature: Logic Level Gate, 4.5V Drive
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TISON-8
Part Status: Active
auf Bestellung 3949 Stücke:
Lieferzeit 10-14 Tag (e)
7+2.87 EUR
10+1.82 EUR
100+1.22 EUR
500+0.97 EUR
1000+0.88 EUR
2000+0.81 EUR
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BSZ013NE2LS5IATMA1 BSZ013NE2LS5IATMA1 Infineon Technologies Infineon-BSZ013NE2LS5I-DS-v02_00-EN.pdf?fileId=5546d4624f205c9a014f6030a74c7cc5 Description: MOSFET N-CH 25V 32A/40A TSDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 32A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs: 1.3mOhm @ 20A, 10V
Power Dissipation (Max): 2.1W (Ta), 69W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TSDSON-8-FL
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3400 pF @ 12 V
auf Bestellung 34638 Stücke:
Lieferzeit 10-14 Tag (e)
6+3.15 EUR
10+2.17 EUR
100+1.66 EUR
500+1.35 EUR
1000+1.21 EUR
2000+1.14 EUR
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IRF9383MTRPBF IRF9383MTRPBF Infineon Technologies irf9383mpbf.pdf?fileId=5546d462533600a40153561169a11dab Description: MOSFET P-CH 30V 22A DIRECTFET
Packaging: Cut Tape (CT)
Package / Case: DirectFET™ Isometric MX
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 160A (Tc)
Rds On (Max) @ Id, Vgs: 2.9mOhm @ 22A, 10V
Power Dissipation (Max): 2.1W (Ta), 113W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 150µA
Supplier Device Package: DIRECTFET™ MX
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7305 pF @ 15 V
auf Bestellung 4319 Stücke:
Lieferzeit 10-14 Tag (e)
4+5.23 EUR
10+3.65 EUR
100+2.74 EUR
500+2.24 EUR
1000+2.08 EUR
2000+1.98 EUR
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BSL202SNH6327XTSA1 BSL202SNH6327XTSA1 Infineon Technologies Infineon-BSL202SN-DS-v02_00-en.pdf?fileId=db3a3043156fd573011622e191d41f68 Description: MOSFET N-CH 20V 7.5A TSOP-6
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.5A (Ta)
Rds On (Max) @ Id, Vgs: 22mOhm @ 7.5A, 4.5V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 1.2V @ 30µA
Supplier Device Package: PG-TSOP6-6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 8.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1147 pF @ 10 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 2093 Stücke:
Lieferzeit 10-14 Tag (e)
14+1.30 EUR
21+0.85 EUR
100+0.55 EUR
500+0.44 EUR
1000+0.39 EUR
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BSS169H6906XTSA1 BSS169H6906XTSA1 Infineon Technologies INFNS19228-1.pdf?t.download=true&u=5oefqw Description: MOSFET N-CH 100V 170MA SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel, Depletion Mode
Current - Continuous Drain (Id) @ 25°C: 170mA (Ta)
Rds On (Max) @ Id, Vgs: 6Ohm @ 170mA, 10V
Power Dissipation (Max): 360mW (Ta)
Vgs(th) (Max) @ Id: 1.8V @ 50µA
Supplier Device Package: PG-SOT23
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 0V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 2.8 nC @ 7 V
Input Capacitance (Ciss) (Max) @ Vds: 68 pF @ 10 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 43881 Stücke:
Lieferzeit 10-14 Tag (e)
10+1.83 EUR
16+1.14 EUR
100+0.75 EUR
500+0.58 EUR
1000+0.52 EUR
Mindestbestellmenge: 10
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IRFH5302DTRPBF Infineon Technologies irfh5302dpbf.pdf?fileId=5546d462533600a40153561b4f5e1ec0 Description: MOSFET N-CH 30V 29A/100A PQFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 29A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 2.5mOhm @ 50A, 10V
Power Dissipation (Max): 3.6W (Ta), 104W (Tc)
Vgs(th) (Max) @ Id: 2.35V @ 100µA
Supplier Device Package: PQFN (5x6) Single Die
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3635 pF @ 25 V
Produkt ist nicht verfügbar
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BSP135H6433XTMA1 BSP135H6433XTMA1 Infineon Technologies Infineon-BSP135-DS-v01_33-en.pdf?fileId=db3a30433c1a8752013c1fd4c839399b Description: MOSFET N-CH 600V 120MA SOT223
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel, Depletion Mode
Current - Continuous Drain (Id) @ 25°C: 120mA (Ta)
Rds On (Max) @ Id, Vgs: 45Ohm @ 120mA, 10V
Power Dissipation (Max): 1.8W (Ta)
Vgs(th) (Max) @ Id: 1V @ 94µA
Supplier Device Package: SOT-223
Part Status: Last Time Buy
Drive Voltage (Max Rds On, Min Rds On): 0V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 4.9 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 146 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 2997 Stücke:
Lieferzeit 10-14 Tag (e)
6+3.10 EUR
10+1.98 EUR
100+1.34 EUR
500+1.06 EUR
1000+0.98 EUR
2000+0.90 EUR
Mindestbestellmenge: 6
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BSC015NE2LS5IATMA1 BSC015NE2LS5IATMA1 Infineon Technologies Infineon-BSC015NE2LS5I-DS-v02_00-EN.pdf?fileId=5546d4624f205c9a014f3bdacb5c1b44 Description: MOSFET N-CH 25V 33A/100A TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 33A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 1.5mOhm @ 30A, 10V
Power Dissipation (Max): 2.5W (Ta), 50W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TDSON-8-6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 12 V
auf Bestellung 21919 Stücke:
Lieferzeit 10-14 Tag (e)
9+2.06 EUR
12+1.49 EUR
100+1.11 EUR
500+0.94 EUR
1000+0.86 EUR
Mindestbestellmenge: 9
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TLE9210823QXAPPKITTOBO1 TLE92108-23QX_APPKIT_Web.pdf
TLE9210823QXAPPKITTOBO1
Hersteller: Infineon Technologies
Description: EVAL MOSFET DRVR TLE92018 MOTIX
Packaging: Box
Function: Gate Driver
Type: Power Management
Utilized IC / Part: TLE9210823
Supplied Contents: Board(s)
Part Status: Active
auf Bestellung 8 Stücke:
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Anzahl Preis
1+88.35 EUR
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EVALM5E1B1245NSICTOBO1 Infineon-EVAL-M5-E1B1245N-SiC-ApplicationNotes-v01_00-EN.pdf?fileId=5546d4626cb27db2016d438785217e27
EVALM5E1B1245NSICTOBO1
Hersteller: Infineon Technologies
Description: EVAL COOLSIC MOSFET MOTOR DRIVER
Packaging: Box
Function: Gate Driver
Type: Power Management
Contents: Board(s)
Utilized IC / Part: 1EDI20H12AH
Supplied Contents: Board(s)
Produkt ist nicht verfügbar
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TLE92108231QXXUMA1 Infineon-TLE92108-231QX-DataSheet-v01_00-EN.pdf?fileId=5546d462749a7c2d01749b323e140979
TLE92108231QXXUMA1
Hersteller: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 48VFQFN
Packaging: Tape & Reel (TR)
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Voltage - Supply: 6V ~ 28V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 950 V
Supplier Device Package: PG-VQFN-48-31
Channel Type: Synchronous
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, N-Channel MOSFET
Current - Peak Output (Source, Sink): 100mA, 100mA
Part Status: Active
DigiKey Programmable: Not Verified
auf Bestellung 7500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2500+3.10 EUR
5000+3.04 EUR
Mindestbestellmenge: 2500
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ICL5102HVXUMA1 Infineon-ICL5102HV-DataSheet-v01_02-EN.pdf?fileId=5546d4626c1f3dc3016c70f543a736d6
ICL5102HVXUMA1
Hersteller: Infineon Technologies
Description: IC LED DRIVER OFFL NO 19DSO
Packaging: Tape & Reel (TR)
Package / Case: 20-SOIC (0.295", 7.50mm Width), 19 Leads
Mounting Type: Surface Mount
Number of Outputs: 1
Frequency: 1.3MHz
Type: AC DC Offline Switcher
Operating Temperature: -40°C ~ 150°C (TJ)
Applications: Lighting
Internal Switch(s): No
Topology: Half-Bridge
Supplier Device Package: PG-DSO-19-1
Dimming: No
Voltage - Supply (Min): 8.5V
Voltage - Supply (Max): 18V
Part Status: Active
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1000+2.56 EUR
Mindestbestellmenge: 1000
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TLD22522EPXUMA1 Infineon-TLD2252-2EP-DataSheet-v01_00-EN.pdf?fileId=5546d4626da6c043016dba1517ee6995
TLD22522EPXUMA1
Hersteller: Infineon Technologies
Description: IC LED DRVR CTRLR PWM 14TSDSO
Packaging: Tape & Reel (TR)
Package / Case: 14-TSSOP (0.154", 3.90mm Width) Exposed Pad
Mounting Type: Surface Mount
Number of Outputs: 2
Type: DC DC Controller
Operating Temperature: -40°C ~ 150°C (TJ)
Applications: Lighting
Current - Output / Channel: 120mA
Internal Switch(s): No
Topology: Switched Capacitor (Charge Pump)
Supplier Device Package: PG-TSDSO-14
Dimming: PWM
Voltage - Supply (Min): 8.5V
Voltage - Supply (Max): 18V
Grade: Automotive
Produkt ist nicht verfügbar
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TLD22522EPXUMA1 Infineon-TLD2252-2EP-DataSheet-v01_00-EN.pdf?fileId=5546d4626da6c043016dba1517ee6995
TLD22522EPXUMA1
Hersteller: Infineon Technologies
Description: IC LED DRVR CTRLR PWM 14TSDSO
Packaging: Cut Tape (CT)
Package / Case: 14-TSSOP (0.154", 3.90mm Width) Exposed Pad
Mounting Type: Surface Mount
Number of Outputs: 2
Type: DC DC Controller
Operating Temperature: -40°C ~ 150°C (TJ)
Applications: Lighting
Current - Output / Channel: 120mA
Internal Switch(s): No
Topology: Switched Capacitor (Charge Pump)
Supplier Device Package: PG-TSDSO-14
Dimming: PWM
Voltage - Supply (Min): 8.5V
Voltage - Supply (Max): 18V
Grade: Automotive
auf Bestellung 2950 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
8+2.43 EUR
10+1.77 EUR
25+1.60 EUR
100+1.42 EUR
250+1.34 EUR
500+1.28 EUR
1000+1.24 EUR
Mindestbestellmenge: 8
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ICL5102HVXUMA1 Infineon-ICL5102HV-DataSheet-v01_02-EN.pdf?fileId=5546d4626c1f3dc3016c70f543a736d6
ICL5102HVXUMA1
Hersteller: Infineon Technologies
Description: IC LED DRIVER OFFL NO 19DSO
Packaging: Cut Tape (CT)
Package / Case: 20-SOIC (0.295", 7.50mm Width), 19 Leads
Mounting Type: Surface Mount
Number of Outputs: 1
Frequency: 1.3MHz
Type: AC DC Offline Switcher
Operating Temperature: -40°C ~ 150°C (TJ)
Applications: Lighting
Internal Switch(s): No
Topology: Half-Bridge
Supplier Device Package: PG-DSO-19-1
Dimming: No
Voltage - Supply (Min): 8.5V
Voltage - Supply (Max): 18V
Part Status: Active
auf Bestellung 3950 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+5.26 EUR
10+3.95 EUR
25+3.62 EUR
100+3.26 EUR
250+3.09 EUR
500+2.99 EUR
Mindestbestellmenge: 4
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IRAUDAMP23 Infineon-IRAUDAMP23-DataSheet-v01_00-EN.pdf?fileId=5546d462677d0f4601679746020259b4
IRAUDAMP23
Hersteller: Infineon Technologies
Description: EVAL BOARD FOR IRS2452AM
Packaging: Box
Output Type: 2-Channel (Stereo)
Amplifier Type: Class D
Voltage - Supply: ±80V ~ 160V
Max Output Power x Channels @ Load: 600W x 2 @ 20Ohm
Board Type: Fully Populated
Utilized IC / Part: IRS2452AM
Supplied Contents: Board(s)
Part Status: Active
Contents: Board(s)
auf Bestellung 3 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+448.59 EUR
Im Einkaufswagen  Stück im Wert von  UAH
TLE5014SP16E0002XUMA1 Infineon-TLE5014SP16%20E0002-DataSheet-v01_01-EN.pdf?fileId=5546d4626eab8fbf016ed1115f552acc
TLE5014SP16E0002XUMA1
Hersteller: Infineon Technologies
Description: GMR-BASED ANGLE SENSOR
Packaging: Tape & Reel (TR)
Package / Case: 16-TSSOP (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Output: Wheatstone Bridge
Operating Temperature: -40°C ~ 125°C (TA)
Termination Style: Gull Wing
Voltage - Supply: 3V ~ 5.5V
Actuator Type: External Magnet, Not Included
Technology: Magnetoresistive
For Measuring: Angle
Supplier Device Package: PG-TDSO-16-1
Rotation Angle - Electrical, Mechanical: 0° ~ 360°, Continuous
Output Signal: Cosine, Sine
Part Status: Active
Grade: Automotive
Qualification: AEC-Q100
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TLE5014SP16E0001XUMA1 Infineon-TLE5014SP16%20E0001-DataSheet-v01_01-EN.pdf?fileId=5546d4626eab8fbf016ed1116a022ad0
TLE5014SP16E0001XUMA1
Hersteller: Infineon Technologies
Description: GMR-BASED ANGLE SENSOR
Packaging: Tape & Reel (TR)
Package / Case: 16-TSSOP (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Output: Wheatstone Bridge
Operating Temperature: -40°C ~ 125°C (TA)
Termination Style: Gull Wing
Voltage - Supply: 3V ~ 5.5V
Actuator Type: External Magnet, Not Included
Technology: Magnetoresistive
For Measuring: Angle
Supplier Device Package: PG-TDSO-16-1
Rotation Angle - Electrical, Mechanical: 0° ~ 360°, Continuous
Output Signal: Cosine, Sine
Part Status: Active
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TLE5014SP16E0001XUMA1 Infineon-TLE5014SP16%20E0001-DataSheet-v01_01-EN.pdf?fileId=5546d4626eab8fbf016ed1116a022ad0
TLE5014SP16E0001XUMA1
Hersteller: Infineon Technologies
Description: GMR-BASED ANGLE SENSOR
Packaging: Cut Tape (CT)
Package / Case: 16-TSSOP (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Output: Wheatstone Bridge
Operating Temperature: -40°C ~ 125°C (TA)
Termination Style: Gull Wing
Voltage - Supply: 3V ~ 5.5V
Actuator Type: External Magnet, Not Included
Technology: Magnetoresistive
For Measuring: Angle
Supplier Device Package: PG-TDSO-16-1
Rotation Angle - Electrical, Mechanical: 0° ~ 360°, Continuous
Output Signal: Cosine, Sine
Part Status: Active
auf Bestellung 138 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+6.60 EUR
5+5.91 EUR
10+5.65 EUR
25+5.35 EUR
50+5.14 EUR
100+4.95 EUR
Mindestbestellmenge: 3
Im Einkaufswagen  Stück im Wert von  UAH
TLE5014SP16E0002XUMA1 Infineon-TLE5014SP16%20E0002-DataSheet-v01_01-EN.pdf?fileId=5546d4626eab8fbf016ed1115f552acc
TLE5014SP16E0002XUMA1
Hersteller: Infineon Technologies
Description: GMR-BASED ANGLE SENSOR
Packaging: Cut Tape (CT)
Package / Case: 16-TSSOP (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Output: Wheatstone Bridge
Operating Temperature: -40°C ~ 125°C (TA)
Termination Style: Gull Wing
Voltage - Supply: 3V ~ 5.5V
Actuator Type: External Magnet, Not Included
Technology: Magnetoresistive
For Measuring: Angle
Supplier Device Package: PG-TDSO-16-1
Rotation Angle - Electrical, Mechanical: 0° ~ 360°, Continuous
Output Signal: Cosine, Sine
Part Status: Active
Grade: Automotive
Qualification: AEC-Q100
auf Bestellung 183 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+7.23 EUR
5+6.49 EUR
10+6.21 EUR
25+5.88 EUR
50+5.66 EUR
100+5.45 EUR
Mindestbestellmenge: 3
Im Einkaufswagen  Stück im Wert von  UAH
BSC0403NSATMA1 Infineon-BSC0403NS-DataSheet-v02_01-EN.pdf?fileId=5546d462700c0ae6017015dda00a2215
BSC0403NSATMA1
Hersteller: Infineon Technologies
Description: 150V, N-CH MOSFET, LOGIC LEVEL,
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Rds On (Max) @ Id, Vgs: 11mOhm @ 35A, 10
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 4.6V @ 91µA
Supplier Device Package: PG-TDSON-8-7
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 75 V
Produkt ist nicht verfügbar
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XDPS21071XUMA1 Infineon-XDPS21071-DataSheet-v01_00-EN.pdf?fileId=5546d4626e41e490016e632b3d382b14
XDPS21071XUMA1
Hersteller: Infineon Technologies
Description: DIGITAL FFR CONTROLLER, DSO12
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.154", 3.90mm Width), 12 Leads
Output Type: Transistor Driver
Mounting Type: Surface Mount
Function: Step-Up/Step-Down
Operating Temperature: -25°C ~ 125°C (TJ)
Output Configuration: Positive
Frequency - Switching: 24.9kHz ~ 139.4kHz
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 3.3V
Supplier Device Package: PG-DSO-12-20
Synchronous Rectifier: No
Control Features: Current Limit, Soft Start
Output Phases: 1
Clock Sync: No
Number of Outputs: 1
Produkt ist nicht verfügbar
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REF_XDPS21071_45W1 Infineon-referencedesign_REF_XDPS21071_45W1-ApplicationNotes-v01_00-EN.pdf?fileId=5546d4626f229553016f9f594a4d19ee&redirId=121668
REF_XDPS21071_45W1
Hersteller: Infineon Technologies
Description: 45W USB-PD 3.0 TYPE C CHARGER
auf Bestellung 1 Stücke:
Lieferzeit 10-14 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
IPAN70R360P7SAUMA1 Infineon-IPAN70R360P7S-DS-v02_01-EN.pdf?fileId=5546d4625acbae4c015ad1977e2820c3
Hersteller: Infineon Technologies
Description: 700V, N-CH MOSFET, TO220 FULLPAK
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IMZA65R048M1HXKSA1 Infineon-IMZA65R048M1H-DataSheet-v02_00-EN.pdf?fileId=5546d4626f229553016f85d9ac090535
IMZA65R048M1HXKSA1
Hersteller: Infineon Technologies
Description: MOSFET 650V NCH SIC TRENCH
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 39A (Tc)
Rds On (Max) @ Id, Vgs: 64mOhm @ 20.1A, 18V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 5.7V @ 6mA
Supplier Device Package: PG-TO247-4-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +23V, -5V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1118 pF @ 400 V
auf Bestellung 416 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+15.14 EUR
30+8.92 EUR
120+7.59 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
IPAN60R360PFD7SXKSA1 Infineon-IPAN60R360PFD7S-DataSheet-v02_01-EN.pdf?fileId=5546d4626df6ee62016e225ddfd96741
IPAN60R360PFD7SXKSA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 650V 10A TO220
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 360mOhm @ 2.9A, 10V
Power Dissipation (Max): 23W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 140µA
Supplier Device Package: PG-TO220-FP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 12.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 534 pF @ 400 V
auf Bestellung 528 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
8+2.36 EUR
50+1.29 EUR
100+1.19 EUR
500+0.94 EUR
Mindestbestellmenge: 8
Im Einkaufswagen  Stück im Wert von  UAH
IMW65R048M1HXKSA1 Infineon-IMW65R048M1H-DataSheet-v02_00-EN.pdf?fileId=5546d4626f229553016f85b4a66c0466
IMW65R048M1HXKSA1
Hersteller: Infineon Technologies
Description: MOSFET 650V NCH SIC TRENCH
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 39A (Tc)
Rds On (Max) @ Id, Vgs: 64mOhm @ 20.1A, 18V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 5.7V @ 6mA
Supplier Device Package: PG-TO247-3-41
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +23V, -5V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1118 pF @ 400 V
auf Bestellung 907 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+14.91 EUR
30+8.78 EUR
120+7.45 EUR
510+7.23 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
IPS60R600PFD7SAKMA1 Infineon-IPS60R600PFD7S-DataSheet-v02_00-EN.pdf?fileId=5546d4626df6ee62016e2294e27e6797
IPS60R600PFD7SAKMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 650V 6A TO251-3
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 1.7A, 10V
Power Dissipation (Max): 31W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 80µA
Supplier Device Package: PG-TO251-3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 8.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 344 pF @ 400 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPD60R280PFD7SAUMA1 Infineon-IPD60R280PFD7S-DataSheet-v02_00-EN.pdf?fileId=5546d4626df6ee62016e22702a14674d
IPD60R280PFD7SAUMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 600V 12A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 3.6A, 10V
Power Dissipation (Max): 51W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 180µA
Supplier Device Package: PG-TO252-3-344
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 15.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 656 pF @ 400 V
Produkt ist nicht verfügbar
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IMW65R107M1HXKSA1 Infineon-IMW65R107M1H-DataSheet-v02_00-EN.pdf?fileId=5546d4626f229553016f85d01cd50485
IMW65R107M1HXKSA1
Hersteller: Infineon Technologies
Description: MOSFET 650V NCH SIC TRENCH
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 142mOhm @ 8.9A, 18V
Power Dissipation (Max): 75W (Tc)
Vgs(th) (Max) @ Id: 5.7V @ 3mA
Supplier Device Package: PG-TO247-3-41
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +23V, -5V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 496 pF @ 400 V
auf Bestellung 467 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+10.93 EUR
30+6.22 EUR
120+5.25 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
IPS60R1K0PFD7SAKMA1 Infineon-IPS60R1K0PFD7S-DataSheet-v02_00-EN.pdf?fileId=5546d4626df6ee62016e2282a4c8675c
IPS60R1K0PFD7SAKMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 650V 4.7A TO251-3
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.7A (Tc)
Rds On (Max) @ Id, Vgs: 1Ohm @ 1A, 10V
Power Dissipation (Max): 26W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 50µA
Supplier Device Package: PG-TO251-3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 230 pF @ 400 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IMZA65R072M1HXKSA1 Infineon-IMZA65R072M1H-DataSheet-v02_00-EN.pdf?fileId=5546d4626f229553016f85e97cf305b9
IMZA65R072M1HXKSA1
Hersteller: Infineon Technologies
Description: MOSFET 650V NCH SIC TRENCH
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
Rds On (Max) @ Id, Vgs: 94mOhm @ 13.3A, 18V
Power Dissipation (Max): 96W (Tc)
Vgs(th) (Max) @ Id: 5.7V @ 4mA
Supplier Device Package: PG-TO247-4-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +23V, -5V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 744 pF @ 400 V
auf Bestellung 169 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+12.64 EUR
30+7.28 EUR
120+6.17 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
IMW65R027M1HXKSA1 Infineon-IMW65R027M1H-DataSheet-v02_00-EN.pdf?fileId=5546d4626f229553016f85ab88170463
IMW65R027M1HXKSA1
Hersteller: Infineon Technologies
Description: MOSFET 650V NCH SIC TRENCH
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 47A (Tc)
Rds On (Max) @ Id, Vgs: 34mOhm @ 38.3A, 18V
Power Dissipation (Max): 189W (Tc)
Vgs(th) (Max) @ Id: 5.7V @ 11mA
Supplier Device Package: PG-TO247-3-41
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +23V, -5V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 2131 pF @ 400 V
auf Bestellung 505 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+20.12 EUR
30+12.21 EUR
120+10.47 EUR
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IPAN60R125PFD7SXKSA1 Infineon-IPAN60R125PFD7S-DataSheet-v02_01-EN.pdf?fileId=5546d4626df6ee62016e224bf53a667c
IPAN60R125PFD7SXKSA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 650V 25A TO220
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Rds On (Max) @ Id, Vgs: 125mOhm @ 7.8A, 10V
Power Dissipation (Max): 32W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 390µA
Supplier Device Package: PG-TO220-FP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1503 pF @ 400 V
auf Bestellung 233 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5+4.29 EUR
50+2.33 EUR
100+2.24 EUR
Mindestbestellmenge: 5
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IPP60R022S7XKSA1 Infineon-IPP60R022S7-DataSheet-v02_01-EN.pdf?fileId=5546d4626bb628d7016bc25d1085779d
IPP60R022S7XKSA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 600V 23A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 23A (Tc)
Rds On (Max) @ Id, Vgs: 22mOhm @ 23A, 12V
Power Dissipation (Max): 390W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1.44mA
Supplier Device Package: PG-TO220-3-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 12 V
Input Capacitance (Ciss) (Max) @ Vds: 5639 pF @ 300 V
auf Bestellung 592 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+16.07 EUR
50+8.80 EUR
100+8.38 EUR
500+7.90 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
IPD60R360PFD7SAUMA1 Infineon-IPD60R360PFD7S-DataSheet-v02_00-EN.pdf?fileId=5546d4626df6ee62016e227958cc6750
IPD60R360PFD7SAUMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 600V 10A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 360mOhm @ 2.9A, 10V
Power Dissipation (Max): 43W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 140µA
Supplier Device Package: PG-TO252-3-344
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 12.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 534 pF @ 400 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPN60R2K0PFD7SATMA1 Infineon-IPN60R2K0PFD7S-DataSheet-v02_00-EN.pdf?fileId=5546d4626df6ee62016e22827e126756
IPN60R2K0PFD7SATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 600V 3A SOT223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-3
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
Rds On (Max) @ Id, Vgs: 2Ohm @ 500mA, 10V
Power Dissipation (Max): 6W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 30µA
Supplier Device Package: PG-SOT223-3-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 3.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 134 pF @ 400 V
auf Bestellung 15000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.38 EUR
6000+0.35 EUR
9000+0.34 EUR
15000+0.32 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
IPS60R360PFD7SAKMA1 Infineon-IPS60R360PFD7S-DataSheet-v02_00-EN.pdf?fileId=5546d4626df6ee62016e2294ceeb6794
IPS60R360PFD7SAKMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 650V 10A TO251-3
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 360mOhm @ 2.9A, 10V
Power Dissipation (Max): 43W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 140µA
Supplier Device Package: PG-TO251-3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 12.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 534 pF @ 400 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPN60R360PFD7SATMA1 Infineon-IPN60R360PFD7S-DataSheet-v02_00-EN.pdf?fileId=5546d4626df6ee62016e228292226759
IPN60R360PFD7SATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 600V 10A SOT223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-3
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 360mOhm @ 2.9A, 10V
Power Dissipation (Max): 7W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 140µA
Supplier Device Package: PG-SOT223-3-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 12.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 534 pF @ 400 V
auf Bestellung 9000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.57 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
IMZA65R107M1HXKSA1 Infineon-IMZA65R107M1H-DataSheet-v02_00-EN.pdf?fileId=5546d4626f229553016f859930890460
IMZA65R107M1HXKSA1
Hersteller: Infineon Technologies
Description: MOSFET 650V NCH SIC TRENCH
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 142mOhm @ 8.9A, 18V
Power Dissipation (Max): 75W (Tc)
Vgs(th) (Max) @ Id: 5.7V @ 3mA
Supplier Device Package: PG-TO247-3-41
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +23V, -5V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 496 pF @ 400 V
auf Bestellung 236 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+10.98 EUR
30+6.31 EUR
120+5.28 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
IPS60R210PFD7SAKMA1 Infineon-IPS60R210PFD7S-DataSheet-v02_00-EN.pdf?fileId=5546d4626df6ee62016e228bcd866791
IPS60R210PFD7SAKMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 650V 16A TO251-3
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Rds On (Max) @ Id, Vgs: 210mOhm @ 4.9A, 10V
Power Dissipation (Max): 64W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 240µA
Supplier Device Package: PG-TO251-3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1015 pF @ 400 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPT60R065S7XTMA1 Infineon-IPT60R065S7-DataSheet-v02_01-EN.pdf?fileId=5546d4626bb628d7016bc253e7b6779a
IPT60R065S7XTMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 600V 8A 8HSOF
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 65mOhm @ 8A, 12V
Power Dissipation (Max): 167W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 490µA
Supplier Device Package: PG-HSOF-8-2
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 12 V
Input Capacitance (Ciss) (Max) @ Vds: 1932 pF @ 300 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IMZA65R027M1HXKSA1 Infineon-IMZA65R027M1H-DataSheet-v02_00-EN.pdf?fileId=5546d4626f229553016f85d997f90532
IMZA65R027M1HXKSA1
Hersteller: Infineon Technologies
Description: MOSFET 650V NCH SIC TRENCH
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 59A (Tc)
Rds On (Max) @ Id, Vgs: 34mOhm @ 38.3A, 18V
Power Dissipation (Max): 189W (Tc)
Vgs(th) (Max) @ Id: 5.7V @ 11mA
Supplier Device Package: PG-TO247-4-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +23V, -5V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 2131 pF @ 400 V
auf Bestellung 266 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+25.56 EUR
30+15.75 EUR
120+13.99 EUR
Im Einkaufswagen  Stück im Wert von  UAH
IPN60R360PFD7SATMA1 Infineon-IPN60R360PFD7S-DataSheet-v02_00-EN.pdf?fileId=5546d4626df6ee62016e228292226759
IPN60R360PFD7SATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 600V 10A SOT223
Packaging: Cut Tape (CT)
Package / Case: TO-261-3
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 360mOhm @ 2.9A, 10V
Power Dissipation (Max): 7W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 140µA
Supplier Device Package: PG-SOT223-3-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 12.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 534 pF @ 400 V
auf Bestellung 12166 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
16+1.11 EUR
100+0.87 EUR
500+0.80 EUR
1000+0.71 EUR
Mindestbestellmenge: 16
Im Einkaufswagen  Stück im Wert von  UAH
IPD60R360PFD7SAUMA1 Infineon-IPD60R360PFD7S-DataSheet-v02_00-EN.pdf?fileId=5546d4626df6ee62016e227958cc6750
IPD60R360PFD7SAUMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 600V 10A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 360mOhm @ 2.9A, 10V
Power Dissipation (Max): 43W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 140µA
Supplier Device Package: PG-TO252-3-344
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 12.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 534 pF @ 400 V
auf Bestellung 2343 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
14+1.32 EUR
18+1.02 EUR
100+0.86 EUR
500+0.83 EUR
1000+0.78 EUR
Mindestbestellmenge: 14
Im Einkaufswagen  Stück im Wert von  UAH
IPT60R065S7XTMA1 Infineon-IPT60R065S7-DataSheet-v02_01-EN.pdf?fileId=5546d4626bb628d7016bc253e7b6779a
IPT60R065S7XTMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 600V 8A 8HSOF
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 65mOhm @ 8A, 12V
Power Dissipation (Max): 167W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 490µA
Supplier Device Package: PG-HSOF-8-2
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 12 V
Input Capacitance (Ciss) (Max) @ Vds: 1932 pF @ 300 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPD60R280PFD7SAUMA1 Infineon-IPD60R280PFD7S-DataSheet-v02_00-EN.pdf?fileId=5546d4626df6ee62016e22702a14674d
IPD60R280PFD7SAUMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 600V 12A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 3.6A, 10V
Power Dissipation (Max): 51W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 180µA
Supplier Device Package: PG-TO252-3-344
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 15.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 656 pF @ 400 V
auf Bestellung 2876 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
7+2.83 EUR
10+1.90 EUR
100+1.33 EUR
500+1.08 EUR
1000+0.98 EUR
Mindestbestellmenge: 7
Im Einkaufswagen  Stück im Wert von  UAH
IPN60R2K0PFD7SATMA1 Infineon-IPN60R2K0PFD7S-DataSheet-v02_00-EN.pdf?fileId=5546d4626df6ee62016e22827e126756
IPN60R2K0PFD7SATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 600V 3A SOT223
Packaging: Cut Tape (CT)
Package / Case: TO-261-3
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
Rds On (Max) @ Id, Vgs: 2Ohm @ 500mA, 10V
Power Dissipation (Max): 6W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 30µA
Supplier Device Package: PG-SOT223-3-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 3.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 134 pF @ 400 V
auf Bestellung 15168 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
12+1.57 EUR
18+0.98 EUR
100+0.64 EUR
500+0.49 EUR
1000+0.44 EUR
Mindestbestellmenge: 12
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FR900R12IP4DBPSA1 Infineon-FR900R12IP4D-DataSheet-v03_00-EN.pdf?fileId=5546d4626c1f3dc3016cae709c2a37eb
FR900R12IP4DBPSA1
Hersteller: Infineon Technologies
Description: IGBT MODULE PP IHM I XHP 1 7KV
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Dual Brake Chopper
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 900A
NTC Thermistor: Yes
Supplier Device Package: AG-PRIME3-1
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 900 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 54 nF @ 25 V
auf Bestellung 2 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+1858.37 EUR
Im Einkaufswagen  Stück im Wert von  UAH
IDK20G120C5XTMA1 Infineon-IDK20G120C5-DataSheet-v02_01-EN.pdf?fileId=5546d4626df6ee62016e3bf103270f47
IDK20G120C5XTMA1
Hersteller: Infineon Technologies
Description: DIODE SIC 1.2KV 56A PGTO26321
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 1050pF @ 1V, 1MHz
Current - Average Rectified (Io): 56A
Supplier Device Package: PG-TO263-2-1
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 20 A
Current - Reverse Leakage @ Vr: 123 µA @ 1200 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IDK20G120C5XTMA1 Infineon-IDK20G120C5-DataSheet-v02_01-EN.pdf?fileId=5546d4626df6ee62016e3bf103270f47
IDK20G120C5XTMA1
Hersteller: Infineon Technologies
Description: DIODE SIC 1.2KV 56A PGTO26321
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 1050pF @ 1V, 1MHz
Current - Average Rectified (Io): 56A
Supplier Device Package: PG-TO263-2-1
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 20 A
Current - Reverse Leakage @ Vr: 123 µA @ 1200 V
auf Bestellung 327 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+14.12 EUR
10+9.63 EUR
100+7.10 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
F3L200R07W2S5FB11BOMA1 Infineon-F3L200R07W2S5F_B11-DataSheet-v03_00-EN.pdf?fileId=5546d46272e49d2a01734dfbd7647113
F3L200R07W2S5FB11BOMA1
Hersteller: Infineon Technologies
Description: IGBT MODULE LOW POWER EASY
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Level Inverter
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.38V @ 15V, 100A
NTC Thermistor: Yes
Supplier Device Package: AG-EASY2B
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 95 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 14.3 nF @ 25 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
FS3L40R07W2H5FB11BOMA1 Infineon-FS3L40R07W2H5F_B11-DataSheet-v03_00-EN.pdf?fileId=5546d4626c1f3dc3016c850552697db5
FS3L40R07W2H5FB11BOMA1
Hersteller: Infineon Technologies
Description: IGBT MODULE LOW POWER EASY
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.81V @ 15V, 20A
NTC Thermistor: Yes
Supplier Device Package: AG-EASY2B-2
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 18 µA
Input Capacitance (Cies) @ Vce: 2 nF @ 25 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
FP10R12W1T7B3BOMA1 Infineon-FP10R12W1T7_B3-DataSheet-v00_10-EN.pdf?fileId=5546d46270c4f93e0170f1856f6372d4
FP10R12W1T7B3BOMA1
Hersteller: Infineon Technologies
Description: IGBT MODULE LOW POWER EASY
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Three Phase Bridge Rectifier
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.6V @ 15V, 10A (Typ)
NTC Thermistor: Yes
Supplier Device Package: AG-EASY1B-2
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 4.5 µA
Input Capacitance (Cies) @ Vce: 1.89 nF @ 25 V
auf Bestellung 11 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+63.73 EUR
Im Einkaufswagen  Stück im Wert von  UAH
DF150R12W1H3FB11BOMA1
DF150R12W1H3FB11BOMA1
Hersteller: Infineon Technologies
Description: IGBT MODULE LOW POWER EASY
auf Bestellung 24 Stücke:
Lieferzeit 10-14 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
1ED44175N01BXTSA1 Infineon-1ED44175N01B-DataSheet-v01_00-EN.pdf?fileId=5546d4626df6ee62016e3bf0b3230f35
1ED44175N01BXTSA1
Hersteller: Infineon Technologies
Description: IC GATE DRVR LOW-SIDE SOT23-6
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 12.7V ~ 20V
Input Type: Non-Inverting
Supplier Device Package: PG-SOT23-6-3
Rise / Fall Time (Typ): 5ns, 5ns
Channel Type: Single
Driven Configuration: Low-Side
Number of Drivers: 1
Gate Type: IGBT, N-Channel MOSFET
Logic Voltage - VIL, VIH: 1.2V, 1.9V
Current - Peak Output (Source, Sink): 2.6A, 2.6A
Part Status: Active
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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IM240S6Y1BAKMA1 Infineon-IM240-DataSheet-v02_03-EN.pdf?fileId=5546d4626fc1ce0b016ff190f50445ea
IM240S6Y1BAKMA1
Hersteller: Infineon Technologies
Description: CIPOS MICRO
auf Bestellung 235 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+16.26 EUR
10+14.69 EUR
25+14.00 EUR
100+12.16 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
FS50R12W1T7B11BOMA1 Infineon-FS50R12W1T7_B11-DataSheet-v02_00-EN.pdf?fileId=5546d46270c4f93e0170f18717047301
FS50R12W1T7B11BOMA1
Hersteller: Infineon Technologies
Description: IGBT MODULE LOW POWER EASY
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 175°C
NTC Thermistor: No
Supplier Device Package: Module
Part Status: Active
Current - Collector (Ic) (Max): 50 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Cutoff (Max): 7.9 µA
Input Capacitance (Cies) @ Vce: 11.1 nF @ 25 V
auf Bestellung 48 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+76.86 EUR
24+54.70 EUR
Im Einkaufswagen  Stück im Wert von  UAH
1ED44175N01BXTSA1 Infineon-1ED44175N01B-DataSheet-v01_00-EN.pdf?fileId=5546d4626df6ee62016e3bf0b3230f35
1ED44175N01BXTSA1
Hersteller: Infineon Technologies
Description: IC GATE DRVR LOW-SIDE SOT23-6
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 12.7V ~ 20V
Input Type: Non-Inverting
Supplier Device Package: PG-SOT23-6-3
Rise / Fall Time (Typ): 5ns, 5ns
Channel Type: Single
Driven Configuration: Low-Side
Number of Drivers: 1
Gate Type: IGBT, N-Channel MOSFET
Logic Voltage - VIL, VIH: 1.2V, 1.9V
Current - Peak Output (Source, Sink): 2.6A, 2.6A
Part Status: Active
DigiKey Programmable: Not Verified
auf Bestellung 2790 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
11+1.60 EUR
16+1.15 EUR
25+1.04 EUR
100+0.92 EUR
250+0.86 EUR
500+0.82 EUR
1000+0.79 EUR
Mindestbestellmenge: 11
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TLE4929CXVAM18NAHAMA1 Infineon-TLE4929C-DataSheet-v01_10-EN.pdf?fileId=5546d46265257de8016537ce85935e53
TLE4929CXVAM18NAHAMA1
Hersteller: Infineon Technologies
Description: IC SPEED SENSOR SSO-3
Features: Programmable, Temperature Compensated
Packaging: Tape & Box (TB)
Package / Case: 3-SIP Module
Output Type: Open Drain
Mounting Type: Through Hole
Axis: Single
Operating Temperature: -40°C ~ 175°C (TJ)
Voltage - Supply: 4V ~ 16V
Technology: Hall Effect
Resolution: 16 b
Sensing Range: ±120mT
Current - Output (Max): 15mA
Current - Supply (Max): 13.4mA
Supplier Device Package: PG-SSO-3-52
Grade: Automotive
Qualification: AEC-Q100
auf Bestellung 1500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1500+4.56 EUR
Mindestbestellmenge: 1500
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BSC0923NDIATMA1 Infineon-BSC0923NDI-DS-v02_00-en.pdf?fileId=db3a304336ca04c90136caa90c9e00b6
BSC0923NDIATMA1
Hersteller: Infineon Technologies
Description: MOSFET 2N-CH 30V 17A/32A TISON8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Asymmetrical
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 17A, 32A
Input Capacitance (Ciss) (Max) @ Vds: 1160pF @ 15V
Rds On (Max) @ Id, Vgs: 5mOhm @ 20A, 10V
Gate Charge (Qg) (Max) @ Vgs: 10nC @ 4.5V
FET Feature: Logic Level Gate, 4.5V Drive
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TISON-8
Part Status: Active
auf Bestellung 3949 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
7+2.87 EUR
10+1.82 EUR
100+1.22 EUR
500+0.97 EUR
1000+0.88 EUR
2000+0.81 EUR
Mindestbestellmenge: 7
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BSZ013NE2LS5IATMA1 Infineon-BSZ013NE2LS5I-DS-v02_00-EN.pdf?fileId=5546d4624f205c9a014f6030a74c7cc5
BSZ013NE2LS5IATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 25V 32A/40A TSDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 32A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs: 1.3mOhm @ 20A, 10V
Power Dissipation (Max): 2.1W (Ta), 69W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TSDSON-8-FL
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3400 pF @ 12 V
auf Bestellung 34638 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
6+3.15 EUR
10+2.17 EUR
100+1.66 EUR
500+1.35 EUR
1000+1.21 EUR
2000+1.14 EUR
Mindestbestellmenge: 6
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IRF9383MTRPBF irf9383mpbf.pdf?fileId=5546d462533600a40153561169a11dab
IRF9383MTRPBF
Hersteller: Infineon Technologies
Description: MOSFET P-CH 30V 22A DIRECTFET
Packaging: Cut Tape (CT)
Package / Case: DirectFET™ Isometric MX
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 160A (Tc)
Rds On (Max) @ Id, Vgs: 2.9mOhm @ 22A, 10V
Power Dissipation (Max): 2.1W (Ta), 113W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 150µA
Supplier Device Package: DIRECTFET™ MX
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7305 pF @ 15 V
auf Bestellung 4319 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+5.23 EUR
10+3.65 EUR
100+2.74 EUR
500+2.24 EUR
1000+2.08 EUR
2000+1.98 EUR
Mindestbestellmenge: 4
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BSL202SNH6327XTSA1 Infineon-BSL202SN-DS-v02_00-en.pdf?fileId=db3a3043156fd573011622e191d41f68
BSL202SNH6327XTSA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 20V 7.5A TSOP-6
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.5A (Ta)
Rds On (Max) @ Id, Vgs: 22mOhm @ 7.5A, 4.5V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 1.2V @ 30µA
Supplier Device Package: PG-TSOP6-6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 8.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1147 pF @ 10 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 2093 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
14+1.30 EUR
21+0.85 EUR
100+0.55 EUR
500+0.44 EUR
1000+0.39 EUR
Mindestbestellmenge: 14
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BSS169H6906XTSA1 INFNS19228-1.pdf?t.download=true&u=5oefqw
BSS169H6906XTSA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 100V 170MA SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel, Depletion Mode
Current - Continuous Drain (Id) @ 25°C: 170mA (Ta)
Rds On (Max) @ Id, Vgs: 6Ohm @ 170mA, 10V
Power Dissipation (Max): 360mW (Ta)
Vgs(th) (Max) @ Id: 1.8V @ 50µA
Supplier Device Package: PG-SOT23
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 0V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 2.8 nC @ 7 V
Input Capacitance (Ciss) (Max) @ Vds: 68 pF @ 10 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 43881 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
10+1.83 EUR
16+1.14 EUR
100+0.75 EUR
500+0.58 EUR
1000+0.52 EUR
Mindestbestellmenge: 10
Im Einkaufswagen  Stück im Wert von  UAH
IRFH5302DTRPBF irfh5302dpbf.pdf?fileId=5546d462533600a40153561b4f5e1ec0
Hersteller: Infineon Technologies
Description: MOSFET N-CH 30V 29A/100A PQFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 29A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 2.5mOhm @ 50A, 10V
Power Dissipation (Max): 3.6W (Ta), 104W (Tc)
Vgs(th) (Max) @ Id: 2.35V @ 100µA
Supplier Device Package: PQFN (5x6) Single Die
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3635 pF @ 25 V
Produkt ist nicht verfügbar
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BSP135H6433XTMA1 Infineon-BSP135-DS-v01_33-en.pdf?fileId=db3a30433c1a8752013c1fd4c839399b
BSP135H6433XTMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 600V 120MA SOT223
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel, Depletion Mode
Current - Continuous Drain (Id) @ 25°C: 120mA (Ta)
Rds On (Max) @ Id, Vgs: 45Ohm @ 120mA, 10V
Power Dissipation (Max): 1.8W (Ta)
Vgs(th) (Max) @ Id: 1V @ 94µA
Supplier Device Package: SOT-223
Part Status: Last Time Buy
Drive Voltage (Max Rds On, Min Rds On): 0V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 4.9 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 146 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 2997 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
6+3.10 EUR
10+1.98 EUR
100+1.34 EUR
500+1.06 EUR
1000+0.98 EUR
2000+0.90 EUR
Mindestbestellmenge: 6
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BSC015NE2LS5IATMA1 Infineon-BSC015NE2LS5I-DS-v02_00-EN.pdf?fileId=5546d4624f205c9a014f3bdacb5c1b44
BSC015NE2LS5IATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 25V 33A/100A TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 33A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 1.5mOhm @ 30A, 10V
Power Dissipation (Max): 2.5W (Ta), 50W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TDSON-8-6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 12 V
auf Bestellung 21919 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
9+2.06 EUR
12+1.49 EUR
100+1.11 EUR
500+0.94 EUR
1000+0.86 EUR
Mindestbestellmenge: 9
Im Einkaufswagen  Stück im Wert von  UAH
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