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TLE8457DLEXUMA1 TLE8457DLEXUMA1 Infineon Technologies Infineon-TLE8457CD-DS-v01_10-EN.pdf?fileId=5546d462689a790c0168a1d53be462be Description: IC TRANSCEIVER 1/1 PGTDSON81
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Type: Transceiver
Number of Drivers/Receivers: 1/1
Data Rate: 20kbps
Protocol: LIN
Supplier Device Package: PG-TDSON-8-1
Part Status: Active
Grade: Automotive
Qualification: AEC-Q100
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25+1.54 EUR
100+1.37 EUR
250+1.28 EUR
500+1.23 EUR
1000+1.19 EUR
2500+1.15 EUR
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TLE8457DSJXUMA1 TLE8457DSJXUMA1 Infineon Technologies Infineon-TLE8457CD-DS-v01_10-EN.pdf?fileId=5546d462689a790c0168a1d53be462be Description: IC TRANSCEIVER 1/1 DSO-8
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Type: Transceiver
Number of Drivers/Receivers: 1/1
Data Rate: 20kbps
Protocol: LIN
Supplier Device Package: PG-DSO-8
Part Status: Active
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1000+1.40 EUR
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BGA855N6E6327XTSA1 BGA855N6E6327XTSA1 Infineon Technologies Infineon-BGA855N6-DS-v01_00-EN.pdf?fileId=5546d462677d0f460167a32ebeb1141d Description: IC AMP GPS 1.164GHZ-1.3GHZ TSNP6
Packaging: Cut Tape (CT)
Package / Case: 6-XFDFN
Mounting Type: Surface Mount
Frequency: 1.164GHz ~ 1.3GHz
RF Type: GPS/GNSS
Voltage - Supply: 1.1V ~ 3.3V
Gain: 18.9dB
Current - Supply: 5.4mA
Noise Figure: 0.6dB
P1dB: -8dBm
Test Frequency: 1.214GHz
Supplier Device Package: PG-TSNP-6-10
Part Status: Active
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29+0.61 EUR
100+0.54 EUR
250+0.50 EUR
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1000+0.47 EUR
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TLE8104EXUMA2 TLE8104EXUMA2 Infineon Technologies Infineon-TLE8104E-DS-v01_04-en.pdf?fileId=db3a304318f3fe2901190401cfda7f25 Description: IC PWR SWITCH N-CHAN 1:1 DSO-20
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TLE8104EXUMA2 TLE8104EXUMA2 Infineon Technologies Infineon-TLE8104E-DS-v01_04-en.pdf?fileId=db3a304318f3fe2901190401cfda7f25 Description: IC PWR SWITCH N-CHAN 1:1 DSO-20
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BGS14MPA9E6327XTSA1 BGS14MPA9E6327XTSA1 Infineon Technologies Infineon-BGS14MPA9-DS-v01_00-EN.pdf?fileId=5546d462677d0f460167a32eb6c5141a Description: IC RF SWITCH SP4T 6GHZ ATSLP9-3
Features: DC Blocked
Packaging: Cut Tape (CT)
Package / Case: 9-UFQFN
Impedance: 50Ohm
Mounting Type: Surface Mount
Circuit: SP4T
RF Type: 2G/3G/4G/5G, Cellular, LTE, W-CDMA
Operating Temperature: 125°C (TJ)
Voltage - Supply: 1.65V ~ 1.95V
Insertion Loss: 1dB
Frequency Range: 50MHz ~ 6GHz
Test Frequency: 5.925GHz
Isolation: 23dB
Supplier Device Package: PG-ATSLP-9-3
IIP3: 77dBm
Part Status: Not For New Designs
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BSM150GB170DLCE3256HDLA1 Infineon Technologies Description: IGBT MODULE 1700V 300A 1250W
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge
Operating Temperature: -40°C ~ 125°C
Vce(on) (Max) @ Vge, Ic: 3.2V @ 15V, 150A
NTC Thermistor: No
Part Status: Obsolete
Current - Collector (Ic) (Max): 300 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Power - Max: 1250 W
Current - Collector Cutoff (Max): 300 µA
Input Capacitance (Cies) @ Vce: 10 nF @ 25 V
Produkt ist nicht verfügbar
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BSC010N04LS6ATMA1 BSC010N04LS6ATMA1 Infineon Technologies Infineon-BSC010N04LS6-DS-v02_00-EN.pdf?fileId=5546d462689a790c0168bd076e184818 Description: MOSFET N-CH 40V 40A/100A TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 1mOhm @ 50A, 10V
Power Dissipation (Max): 3W (Ta), 150W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: PG-TDSON-8-6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 67 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 4600 pF @ 20 V
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500+1.45 EUR
1000+1.39 EUR
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BSC022N04LS6ATMA1 BSC022N04LS6ATMA1 Infineon Technologies Infineon-BSC022N04LS6-DS-v02_00-EN.pdf?fileId=5546d462689a790c0168bd1094dc481b Description: MOSFET N-CH 40V 27A/100A TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 27A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 2.2mOhm @ 50A, 10V
Power Dissipation (Max): 3W (Ta), 79W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: PG-TDSON-8-1
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 20 V
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AUXDILZ24NS Infineon Technologies Description: MOSFET N-CH D2PAK
Packaging: Tape & Reel (TR)
Part Status: Obsolete
Produkt ist nicht verfügbar
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IPD650P06NMSAUMA1 IPD650P06NMSAUMA1 Infineon Technologies Power_Sensing_Selection_Guide_2021.pdf Description: MOSFET P-CH 60V 22A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
Rds On (Max) @ Id, Vgs: 65mOhm @ 22A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1.04mA
Supplier Device Package: PG-TO252-3-313
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 30 V
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IPD950P06NMSAUMA1 IPD950P06NMSAUMA1 Infineon Technologies Description: MOSFET P-CH 60V TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Supplier Device Package: PG-TO252-3-313
Part Status: Active
Drain to Source Voltage (Vdss): 60 V
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IPD06P003NSAUMA1 IPD06P003NSAUMA1 Infineon Technologies Description: MOSFET P-CH 60V 22A TO252-3
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IDWD15G120C5XKSA1 IDWD15G120C5XKSA1 Infineon Technologies Infineon-IDWD15G120C5-DS-v02_00-EN.pdf?fileId=5546d462689a790c016933d54d2b5489 Description: DIODE SIL CARB 1.2KV 49A TO247-2
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 1050pF @ 1V, 1MHz
Current - Average Rectified (Io): 49A
Supplier Device Package: PG-TO247-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.65 V @ 15 A
Current - Reverse Leakage @ Vr: 124 µA @ 1200 V
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10+16.18 EUR
100+13.49 EUR
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IKP28N65ES5XKSA1 IKP28N65ES5XKSA1 Infineon Technologies Infineon-IKP28N65ES5-DS-v02_01-EN.pdf?fileId=5546d462696dbf1201697b6e31284429 Description: IGBT TRENCH FS 650V 38A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 73 ns
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 28A
Supplier Device Package: PG-TO220-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 27ns/184ns
Switching Energy: 530µJ (on), 400µJ (off)
Test Condition: 400V, 28A, 34Ohm, 15V
Gate Charge: 50 nC
Part Status: Active
Current - Collector (Ic) (Max): 38 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 90 A
Power - Max: 130 W
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IM393L6FXKLA1 IM393L6FXKLA1 Infineon Technologies Infineon-IM393-L6F-DS-v02_00-EN.pdf?fileId=5546d462696dbf1201699a946a8b78d2 Description: POWER MODULE 600V 15A MDIP22
Packaging: Tube
Package / Case: 26-PowerSIP Module, 22 Leads, Formed Leads
Mounting Type: Through Hole
Type: IGBT
Configuration: 3 Phase Inverter
Voltage - Isolation: 2000Vrms
Part Status: Obsolete
Current: 15 A
Voltage: 600 V
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IM393M6FXKLA1 IM393M6FXKLA1 Infineon Technologies Infineon-IM393-M6F-DS-v02_00-EN.pdf?fileId=5546d462696dbf1201699a947c0278da Description: POWER MODULE 600V 10A 26PWRSIP
Packaging: Tube
Package / Case: 26-PowerSIP Module, 22 Leads, Formed Leads
Mounting Type: Through Hole
Type: IGBT
Configuration: 3 Phase Inverter
Voltage - Isolation: 2000Vrms
Part Status: Obsolete
Current: 10 A
Voltage: 600 V
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IM393S6FXKLA1 IM393S6FXKLA1 Infineon Technologies Infineon-IM393-S6F-DS-v02_00-EN.pdf?fileId=5546d462696dbf1201699a9d808378dd Description: POWER MODULE 600V 6A MDIP22
Packaging: Tube
Package / Case: 26-PowerSIP Module, 22 Leads, Formed Leads
Mounting Type: Through Hole
Type: IGBT
Configuration: 3 Phase Inverter
Voltage - Isolation: 2000Vrms
Part Status: Obsolete
Current: 6 A
Voltage: 600 V
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IM393L6EXKLA1 IM393L6EXKLA1 Infineon Technologies Infineon-IM393-L6E-DS-v02_00-EN.pdf?fileId=5546d462696dbf1201699a8b350f78c7 Description: POWER MODULE 600V 15A MDIP30
Packaging: Tube
Package / Case: 35-PowerDIP Module (0.866", 22.00mm), 30 Leads
Mounting Type: Through Hole
Type: IGBT
Configuration: 3 Phase Inverter
Voltage - Isolation: 2000Vrms
Part Status: Obsolete
Current: 15 A
Voltage: 600 V
Produkt ist nicht verfügbar
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IM393L6E3XKLA1 Infineon Technologies Infineon-IM393-L6E-DS-v02_00-EN.pdf?fileId=5546d462696dbf1201699a8b350f78c7 Description: POWER MODULE 600V 15A MDIP30
Packaging: Tube
Package / Case: 35-PowerDIP Module (0.866", 22.00mm), 30 Leads
Mounting Type: Through Hole
Type: IGBT
Configuration: 3 Phase Inverter
Voltage - Isolation: 2000Vrms
Part Status: Obsolete
Current: 15 A
Voltage: 600 V
Produkt ist nicht verfügbar
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IM393M6EXKLA1 IM393M6EXKLA1 Infineon Technologies Infineon-IM393-M6E-DS-v02_00-EN.pdf?fileId=5546d462696dbf1201699a94732278d5 Description: POWER MODULE 600V 10A MDIP30
Packaging: Tube
Package / Case: 35-PowerDIP Module (0.866", 22.00mm), 30 Leads
Mounting Type: Through Hole
Type: IGBT
Configuration: 3 Phase Inverter
Voltage - Isolation: 2000Vrms
Part Status: Obsolete
Current: 10 A
Voltage: 600 V
Produkt ist nicht verfügbar
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IM393M6E2XKLA1 IM393M6E2XKLA1 Infineon Technologies Infineon-IM393-M6E-DS-v02_00-EN.pdf?fileId=5546d462696dbf1201699a94732278d5 Description: POWER MODULE 600V 10A MDIP30
Packaging: Tube
Package / Case: 35-PowerDIP Module (0.866", 22.00mm), 30 Leads
Mounting Type: Through Hole
Type: IGBT
Configuration: 3 Phase Inverter
Voltage - Isolation: 2000Vrms
Part Status: Obsolete
Current: 10 A
Voltage: 600 V
Produkt ist nicht verfügbar
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IM393M6E3XKLA1 IM393M6E3XKLA1 Infineon Technologies Infineon-IM393-M6E-DS-v02_00-EN.pdf?fileId=5546d462696dbf1201699a94732278d5 Description: POWER MODULE 600V 10A MDIP30
Packaging: Tube
Package / Case: 35-PowerDIP Module (0.866", 22.00mm), 30 Leads
Mounting Type: Through Hole
Type: IGBT
Configuration: 3 Phase Inverter
Voltage - Isolation: 2000Vrms
Part Status: Obsolete
Current: 10 A
Voltage: 600 V
Produkt ist nicht verfügbar
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IM393S6E2XKLA1 IM393S6E2XKLA1 Infineon Technologies Infineon-IM393-S6E-DS-v02_00-EN.pdf?fileId=5546d462696dbf1201699a9d912478e4 Description: POWER MODULE 600V 6A MDIP30
Packaging: Tube
Package / Case: 35-PowerDIP Module (0.866", 22.00mm), 30 Leads
Mounting Type: Through Hole
Type: IGBT
Configuration: 3 Phase Inverter
Voltage - Isolation: 2000Vrms
Part Status: Obsolete
Current: 6 A
Voltage: 600 V
Produkt ist nicht verfügbar
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IM393X6EXKLA1 IM393X6EXKLA1 Infineon Technologies Infineon-IM393-X6E-DS-v02_00-EN.pdf?fileId=5546d462696dbf1201699a9d9a3578e9 Description: POWER MODULE 600V 20A MDIP30
Packaging: Tube
Package / Case: 35-PowerDIP Module (0.866", 22.00mm), 30 Leads
Mounting Type: Through Hole
Type: IGBT
Configuration: 3 Phase Inverter
Voltage - Isolation: 2000Vrms
Part Status: Obsolete
Current: 20 A
Voltage: 600 V
Produkt ist nicht verfügbar
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EVALM1IM231TOBO1 Infineon Technologies Infineon-IM231-L6S1B_T2B-DS-v02_00-EN.pdf?fileId=5546d462689a790c0169067334d10ef3 Description: EVAL IM231 CIPOS MICRO IPM
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EVALSHNBV01DPS422TOBO1 EVALSHNBV01DPS422TOBO1 Infineon Technologies Infineon-Quick%20Setup%20Guide%20for%20Barometric%20Pressure%20Sensor%20Hub%20Nano-GS-v01_01-EN.pdf?fileId=5546d46269bda8df0169bf3dccc11a5c Description: EVAL DPS422 BAROMETRIC HUB
Packaging: Bulk
Interface: RF
Contents: Board(s)
Sensor Type: Pressure
Utilized IC / Part: DPS422, XMC1100
Supplied Contents: Board(s)
Embedded: Yes, MCU, 32-Bit
Produkt ist nicht verfügbar
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S2GOPRESSUREDPS422TOBO1 S2GOPRESSUREDPS422TOBO1 Infineon Technologies Description: EVAL DPS422 BAROMETRIC
Packaging: Bulk
Function: Barometer
Type: Sensor
Contents: Board(s)
Utilized IC / Part: DPS422
Platform: Shield2Go
Produkt ist nicht verfügbar
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TLF50211ELXUMA2 TLF50211ELXUMA2 Infineon Technologies Infineon-TLF50211EL-DS-v01_10-EN.pdf?fileId=5546d46258fc0bc1015969d2af9641e9 Description: IC REG BUCK 5V 500MA SSOP-14-3
Packaging: Cut Tape (CT)
Package / Case: 14-LSSOP (0.154", 3.90mm Width) Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 500mA
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Frequency - Switching: 2.25MHz
Voltage - Input (Max): 45V
Topology: Buck
Supplier Device Package: PG-SSOP-14-3
Synchronous Rectifier: No
Voltage - Input (Min): 4.75V
Voltage - Output (Min/Fixed): 5V
Grade: Automotive
Part Status: Active
Qualification: AEC-Q100
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1000+2.13 EUR
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AUIR3241SDEMOBOARDTOBO1 AUIR3241SDEMOBOARDTOBO1 Infineon Technologies Infineon-AUIR3241S%20DEMOBOARD-DS-v01_00-EN.pdf?fileId=5546d46265f064ff016667e5d4133c3f Description: EVAL BOARD FOR AUIR3241S
Packaging: Bulk
Function: Gate Driver
Type: Power Management
Contents: Board(s)
Utilized IC / Part: AUIR3241S
Supplied Contents: Board(s)
Part Status: Obsolete
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28576411 B Infineon Technologies Description: IC FLASH 24FBGA
Packaging: Tape & Reel (TR)
Technology: FLASH - NOR
Memory Format: FLASH
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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FM24W256-EGTR Infineon Technologies FM24W256_RevL_12-17-18.pdf Description: IC FRAM 256KBIT 8SOIC
Packaging: Tape & Reel (TR)
Memory Size: 256Kbit
Memory Format: FRAM
Part Status: Obsolete
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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FM24W256-EG Infineon Technologies FM24W256_RevL_12-17-18.pdf Description: IC FRAM 256KBIT 8SOIC
Packaging: Tray
Part Status: Obsolete
DigiKey Programmable: Not Verified
Memory Size: 256Kbit
Memory Format: FRAM
Produkt ist nicht verfügbar
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MB88386PMC-GS-TLE1 Infineon Technologies Description: IC AUTO MCU 80LQFP
Packaging: Tray
Part Status: Obsolete
Produkt ist nicht verfügbar
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IKB20N60TATMA1 IKB20N60TATMA1 Infineon Technologies IKB20N60T+Rev2_4G.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a304412b407950112b42883273e12 Description: IGBT TRENCH FS 600V 40A TO263-3
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 41 ns
Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 20A
Supplier Device Package: PG-TO263-3-2
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 18ns/199ns
Switching Energy: 770µJ
Test Condition: 400V, 20A, 12Ohm, 15V
Gate Charge: 120 nC
Part Status: Active
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 60 A
Power - Max: 166 W
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IRS2093MTRPBF IRS2093MTRPBF Infineon Technologies irs2093mpbf.pdf?fileId=5546d462533600a401535675fb892793 Description: IC AMP CLASS D QUAD 48MLPQ
Features: Depop, Short-Circuit Protection, Shutdown
Packaging: Cut Tape (CT)
Package / Case: 48-VFQFN Exposed Pad
Output Type: 4-Channel (Quad)
Mounting Type: Surface Mount
Type: Class D
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 10V ~ 15V
Supplier Device Package: PG-VQFN-48
Part Status: Active
auf Bestellung 2954 Stücke:
Lieferzeit 10-14 Tag (e)
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EVAL12W3PHSMP7TOBO1 EVAL12W3PHSMP7TOBO1 Infineon Technologies Infineon-ApplicationNote_EvaluationBoard_EVAL_12W_3PH_SM_P7-AN-v01_00-EN.pdf?fileId=5546d46269e1c019016a7f8ee5ed40c1 Description: EVAL BOARD ICE5QSAG IPD95R1K2P7
Packaging: Bulk
Voltage - Output: 12V
Voltage - Input: 185 ~ 460 VAC
Current - Output: 1A
Contents: Board(s)
Regulator Topology: Flyback
Board Type: Fully Populated
Utilized IC / Part: ICE5QSAG, IPD95R1K2P7
Supplied Contents: Board(s)
Main Purpose: AC/DC, Primary Side
Outputs and Type: 1 Isolated Output
Part Status: Active
Power - Output: 12W
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TPM7012XENONBOARDTOBO1 TPM7012XENONBOARDTOBO1 Infineon Technologies Infineon-OPTIGA_TPM-PB-v10_15-EN.pdf?fileId=5546d46145da30e80145efa2f0b96a8e Description: EVAL TPM SLB9670 XENON
Packaging: Bulk
Function: Trusted Platform Module (TPM)
Type: Interface
Contents: Board(s)
Part Status: Obsolete
Produkt ist nicht verfügbar
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DPS368XTSA1 DPS368XTSA1 Infineon Technologies Infineon-DPS368-DS-v01_00-EN.pdf?fileId=5546d46269e1c019016a0c45105d4b40 Description: SENSOR 17.4PSIG 24BIT 8VLGA
Packaging: Tape & Reel (TR)
Features: Temperature Compensated
Package / Case: 8-VFLGA
Output Type: I2C, SPI
Mounting Type: Surface Mount
Output: 24 b
Operating Pressure: 4.35PSI ~ 17.4PSI (30kPa ~ 120kPa)
Pressure Type: Vented Gauge
Accuracy: ±0.015PSI (±0.1kPa)
Operating Temperature: -40°C ~ 85°C
Termination Style: SMD (SMT) Tab
Voltage - Supply: 1.7V ~ 3.6V
Applications: Board Mount
Supplier Device Package: PG-VLGA-8-1
Port Style: No Port
Maximum Pressure: 145PSI (999.74kPa)
Part Status: Active
Produkt ist nicht verfügbar
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EVALSHNBV01DPS368TOBO1 EVALSHNBV01DPS368TOBO1 Infineon Technologies Infineon-Quick%20Setup%20Guide%20for%20Barometric%20Pressure%20Sensor%20Hub%20Nano-GS-v01_01-EN.pdf?fileId=5546d46269bda8df0169bf3dccc11a5c Description: SENSOR HUB NANO DPS368
Packaging: Bulk
Interface: I2C, Serial, SPI
Voltage - Supply: 1.7V ~ 3.6V
Sensor Type: Pressure
Utilized IC / Part: DPS368
Supplied Contents: Board(s)
Sensing Range: 300 ~ 1200 hPa
Part Status: Active
Contents: Board(s)
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IPB12CN10NGATMA2 Infineon Technologies Description: MOSFET N-CH 100V 67A TO263-3
Packaging: Tape & Reel (TR)
Part Status: Obsolete
Produkt ist nicht verfügbar
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IRF3717TRPBF-1 IRF3717TRPBF-1 Infineon Technologies IRF3717PbF-1_7-25-14.pdf Description: MOSFET N-CH 20V 20A 8-SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Ta)
Rds On (Max) @ Id, Vgs: 4.4mOhm @ 20A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 2.45V @ 250µA
Supplier Device Package: 8-SOIC
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2890 pF @ 10 V
Produkt ist nicht verfügbar
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IRF7331TRPBF-1 IRF7331TRPBF-1 Infineon Technologies IRF7331TRPbF-1_10-16-14.pdf Description: MOSFET 2N-CH 20V 7A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W (Ta)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 1340pF @ 16V
Rds On (Max) @ Id, Vgs: 30mOhm @ 7A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 4.5V
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: 8-SOIC
Produkt ist nicht verfügbar
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IRF7904TRPBF-1 IRF7904TRPBF-1 Infineon Technologies IRF7904PbF-1_5-19-14.pdf Description: MOSFET 2N-CH 30V 7.6A/11A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.4W, 2W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 7.6A, 11A
Input Capacitance (Ciss) (Max) @ Vds: 910pF @ 15V
Rds On (Max) @ Id, Vgs: 16.2mOhm @ 7.6A, 10V
Gate Charge (Qg) (Max) @ Vgs: 11nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.25V @ 25µA
Supplier Device Package: 8-SO
Part Status: Obsolete
Produkt ist nicht verfügbar
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IRFC048N Infineon Technologies Description: MOSFET N-CH
Packaging: Bulk
Part Status: Obsolete
Produkt ist nicht verfügbar
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IRFC048NB Infineon Technologies Description: MOSFET N-CH
Produkt ist nicht verfügbar
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BTS500101TADATMA2 BTS500101TADATMA2 Infineon Technologies BTS50010-1TA_rev1.2_12-5-17.pdf Description: IC PWR HIC-PROFET N-CH 1:1 TO263
Packaging: Cut Tape (CT)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab), TO-263CB
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 1.6mOhm
Input Type: Non-Inverting
Voltage - Load: 8V ~ 18V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 48A
Ratio - Input:Output: 1:1
Supplier Device Package: P/PG-TO-263-7-10
Fault Protection: Over Temperature, Over Voltage, Reverse Battery, Short Circuit
Grade: Automotive
Part Status: Active
Qualification: AEC-Q100
auf Bestellung 1529 Stücke:
Lieferzeit 10-14 Tag (e)
2+9.26 EUR
10+7.10 EUR
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S25FL132K0XMFN013 S25FL132K0XMFN013 Infineon Technologies S25FL116K,S25FL132K,S25FL164K.pdf Description: IC FLASH 32MBIT SPI/QUAD 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Memory Size: 32Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 108 MHz
Memory Format: FLASH
Supplier Device Package: 8-SOIC
Part Status: Obsolete
Write Cycle Time - Word, Page: 3ms
Memory Interface: SPI - Quad I/O
Memory Organization: 4M x 8
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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S25FL032P0XBHI033 S25FL032P0XBHI033 Infineon Technologies S25FL032P.pdf Description: IC FLASH 32MBIT SPI/QUAD 24BGA
Packaging: Cut Tape (CT)
Package / Case: 24-TBGA
Mounting Type: Surface Mount
Memory Size: 32Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 104 MHz
Memory Format: FLASH
Supplier Device Package: 24-BGA (6x8)
Part Status: Obsolete
Write Cycle Time - Word, Page: 5µs, 3ms
Memory Interface: SPI - Quad I/O
Memory Organization: 4M x 8
DigiKey Programmable: Not Verified
auf Bestellung 2432 Stücke:
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9+2.16 EUR
10+1.92 EUR
25+1.83 EUR
50+1.76 EUR
100+1.70 EUR
250+1.62 EUR
500+1.57 EUR
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IPB90R340C3ATMA2 IPB90R340C3ATMA2 Infineon Technologies Infineon-IPB90R340C3-DS-v02_00-en.pdf?fileId=db3a304336c52a950136c5c59ef500ad Description: MOSFET N-CH 900V 15A TO263-3
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 340mOhm @ 9.2A, 10V
Power Dissipation (Max): 208W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 1mA
Supplier Device Package: PG-TO263-3-2
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 94 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 100 V
auf Bestellung 1000 Stücke:
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1000+4.86 EUR
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IPB90R340C3ATMA2 IPB90R340C3ATMA2 Infineon Technologies Infineon-IPB90R340C3-DS-v02_00-en.pdf?fileId=db3a304336c52a950136c5c59ef500ad Description: MOSFET N-CH 900V 15A TO263-3
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 340mOhm @ 9.2A, 10V
Power Dissipation (Max): 208W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 1mA
Supplier Device Package: PG-TO263-3-2
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 94 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 100 V
auf Bestellung 1824 Stücke:
Lieferzeit 10-14 Tag (e)
2+9.42 EUR
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IPI90R1K2C3XKSA2 IPI90R1K2C3XKSA2 Infineon Technologies Infineon-IPI90R1K2C3-DS-v01_00-en.pdf?fileId=db3a30432313ff5e0123a85db6ae5bb3 Description: MOSFET N-CH 900V 5.1A TO262-3
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.1A (Tc)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 2.8A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 310µA
Supplier Device Package: PG-TO262-3-1
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 710 pF @ 100 V
Produkt ist nicht verfügbar
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BFS 17P E8211 BFS 17P E8211 Infineon Technologies Description: RF TRANS NPN SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Power - Max: 280mW
Current - Collector (Ic) (Max): 25mA
Voltage - Collector Emitter Breakdown (Max): 15V
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 2mA, 1V
Frequency - Transition: 1.4GHz
Noise Figure (dB Typ @ f): 3.5dB @ 800MHz
Supplier Device Package: PG-SOT23
Part Status: Active
Produkt ist nicht verfügbar
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BFS17PE6752HTSA1 BFS17PE6752HTSA1 Infineon Technologies Description: RF TRANS NPN 15V 1.4GHZ PG-SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Power - Max: 280mW
Current - Collector (Ic) (Max): 25mA
Voltage - Collector Emitter Breakdown (Max): 15V
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 2mA, 1V
Frequency - Transition: 1.4GHz
Noise Figure (dB Typ @ f): 3.5dB @ 800MHz
Supplier Device Package: PG-SOT23
Part Status: Last Time Buy
Produkt ist nicht verfügbar
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BFS17WH6393XTSA1 BFS17WH6393XTSA1 Infineon Technologies Description: RF TRANS NPN SOT323-3
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Power - Max: 280mW
Current - Collector (Ic) (Max): 25mA
Voltage - Collector Emitter Breakdown (Max): 15V
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 2mA, 1V
Frequency - Transition: 1.4GHz
Noise Figure (dB Typ @ f): 3.5dB @ 800MHz
Supplier Device Package: PG-SOT323
Part Status: Active
Produkt ist nicht verfügbar
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FD450R12KE4PHOSA1 FD450R12KE4PHOSA1 Infineon Technologies Infineon-FD450R12KE4P-DataSheet-v02_00-EN.pdf?fileId=5546d4626b2d8e69016b54a4ce416fd0 Description: IGBT MODULE 1200V 450A AG62MM-1
auf Bestellung 56 Stücke:
Lieferzeit 10-14 Tag (e)
1+352.12 EUR
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REFAUDIOAMA12040TOBO1 REFAUDIOAMA12040TOBO1 Infineon Technologies Infineon-UserManual_ClassD_audio_MA120xxx_reference_boards-ApplicationNotes-v01_00-EN.pdf?fileId=5546d46269bda8df0169da3392a743bd Description: EVAL MA12040 CLASS D AMP
Packaging: Bulk
Output Type: 2-Channel (Stereo)
Amplifier Type: Class D
Voltage - Supply: 5V ~ 18V
Max Output Power x Channels @ Load: 40W x 2 @ 4Ohm
Board Type: Fully Populated
Utilized IC / Part: MA12040
Supplied Contents: Board(s)
auf Bestellung 1 Stücke:
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1+97.12 EUR
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REFAUDIODMA12040PTOBO1 REFAUDIODMA12040PTOBO1 Infineon Technologies Infineon-UserManual_ClassD_audio_MA120xxx_reference_boards-ApplicationNotes-v01_00-EN.pdf?fileId=5546d46269bda8df0169da3392a743bd Description: EVAL BOARD FOR MA12040P
Packaging: Bulk
Output Type: 2-Channel (Stereo)
Amplifier Type: Class D
Voltage - Supply: 5V ~ 18V
Max Output Power x Channels @ Load: 40W x 2 @ 4Ohm
Board Type: Fully Populated
Utilized IC / Part: MA12040P
Supplied Contents: Board(s)
Contents: Board(s)
auf Bestellung 3 Stücke:
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1+99.39 EUR
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IPB156N22NFDATMA1 IPB156N22NFDATMA1 Infineon Technologies Infineon-IPB156N22NFD-DS-v02_00-EN.pdf?fileId=5546d4625d5945ed015dacb0bcce22e7 Description: MOSFET N-CH 220V 72A TO263-3
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 72A (Tc)
Rds On (Max) @ Id, Vgs: 15.6mOhm @ 50A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 270µA
Supplier Device Package: PG-TO263-3-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 220 V
Gate Charge (Qg) (Max) @ Vgs: 87 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6930 pF @ 110 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 110
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Lieferzeit 10-14 Tag (e)
2+13.32 EUR
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100+6.66 EUR
500+5.92 EUR
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IPT029N08N5ATMA1 IPT029N08N5ATMA1 Infineon Technologies Infineon-IPT029N08N5-DS-v02_00-EN.pdf?fileId=5546d46258f240be0158f28c77120098 Description: MOSFET N-CH 80V 52A/169A HSOF-8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 52A (Ta), 169A (Tc)
Rds On (Max) @ Id, Vgs: 2.9mOhm @ 150A, 10V
Power Dissipation (Max): 168W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 108µA
Supplier Device Package: PG-HSOF-8-1
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 87 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6500 pF @ 40 V
Produkt ist nicht verfügbar
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TLE8457DLEXUMA1 Infineon-TLE8457CD-DS-v01_10-EN.pdf?fileId=5546d462689a790c0168a1d53be462be
TLE8457DLEXUMA1
Hersteller: Infineon Technologies
Description: IC TRANSCEIVER 1/1 PGTDSON81
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Type: Transceiver
Number of Drivers/Receivers: 1/1
Data Rate: 20kbps
Protocol: LIN
Supplier Device Package: PG-TDSON-8-1
Part Status: Active
Grade: Automotive
Qualification: AEC-Q100
auf Bestellung 10054 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
8+2.32 EUR
11+1.70 EUR
25+1.54 EUR
100+1.37 EUR
250+1.28 EUR
500+1.23 EUR
1000+1.19 EUR
2500+1.15 EUR
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TLE8457DSJXUMA1 Infineon-TLE8457CD-DS-v01_10-EN.pdf?fileId=5546d462689a790c0168a1d53be462be
TLE8457DSJXUMA1
Hersteller: Infineon Technologies
Description: IC TRANSCEIVER 1/1 DSO-8
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Type: Transceiver
Number of Drivers/Receivers: 1/1
Data Rate: 20kbps
Protocol: LIN
Supplier Device Package: PG-DSO-8
Part Status: Active
auf Bestellung 9366 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
7+2.85 EUR
10+2.56 EUR
25+2.41 EUR
100+2.05 EUR
250+1.93 EUR
500+1.69 EUR
1000+1.40 EUR
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BGA855N6E6327XTSA1 Infineon-BGA855N6-DS-v01_00-EN.pdf?fileId=5546d462677d0f460167a32ebeb1141d
BGA855N6E6327XTSA1
Hersteller: Infineon Technologies
Description: IC AMP GPS 1.164GHZ-1.3GHZ TSNP6
Packaging: Cut Tape (CT)
Package / Case: 6-XFDFN
Mounting Type: Surface Mount
Frequency: 1.164GHz ~ 1.3GHz
RF Type: GPS/GNSS
Voltage - Supply: 1.1V ~ 3.3V
Gain: 18.9dB
Current - Supply: 5.4mA
Noise Figure: 0.6dB
P1dB: -8dBm
Test Frequency: 1.214GHz
Supplier Device Package: PG-TSNP-6-10
Part Status: Active
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Lieferzeit 10-14 Tag (e)
Anzahl Preis
19+0.97 EUR
26+0.68 EUR
29+0.61 EUR
100+0.54 EUR
250+0.50 EUR
500+0.48 EUR
1000+0.47 EUR
Mindestbestellmenge: 19
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TLE8104EXUMA2 Infineon-TLE8104E-DS-v01_04-en.pdf?fileId=db3a304318f3fe2901190401cfda7f25
TLE8104EXUMA2
Hersteller: Infineon Technologies
Description: IC PWR SWITCH N-CHAN 1:1 DSO-20
Produkt ist nicht verfügbar
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TLE8104EXUMA2 Infineon-TLE8104E-DS-v01_04-en.pdf?fileId=db3a304318f3fe2901190401cfda7f25
TLE8104EXUMA2
Hersteller: Infineon Technologies
Description: IC PWR SWITCH N-CHAN 1:1 DSO-20
Produkt ist nicht verfügbar
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BGS14MPA9E6327XTSA1 Infineon-BGS14MPA9-DS-v01_00-EN.pdf?fileId=5546d462677d0f460167a32eb6c5141a
BGS14MPA9E6327XTSA1
Hersteller: Infineon Technologies
Description: IC RF SWITCH SP4T 6GHZ ATSLP9-3
Features: DC Blocked
Packaging: Cut Tape (CT)
Package / Case: 9-UFQFN
Impedance: 50Ohm
Mounting Type: Surface Mount
Circuit: SP4T
RF Type: 2G/3G/4G/5G, Cellular, LTE, W-CDMA
Operating Temperature: 125°C (TJ)
Voltage - Supply: 1.65V ~ 1.95V
Insertion Loss: 1dB
Frequency Range: 50MHz ~ 6GHz
Test Frequency: 5.925GHz
Isolation: 23dB
Supplier Device Package: PG-ATSLP-9-3
IIP3: 77dBm
Part Status: Not For New Designs
auf Bestellung 4005 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
11+1.65 EUR
16+1.15 EUR
25+1.02 EUR
100+0.88 EUR
250+0.81 EUR
500+0.77 EUR
1000+0.74 EUR
Mindestbestellmenge: 11
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BSM150GB170DLCE3256HDLA1
Hersteller: Infineon Technologies
Description: IGBT MODULE 1700V 300A 1250W
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge
Operating Temperature: -40°C ~ 125°C
Vce(on) (Max) @ Vge, Ic: 3.2V @ 15V, 150A
NTC Thermistor: No
Part Status: Obsolete
Current - Collector (Ic) (Max): 300 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Power - Max: 1250 W
Current - Collector Cutoff (Max): 300 µA
Input Capacitance (Cies) @ Vce: 10 nF @ 25 V
Produkt ist nicht verfügbar
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BSC010N04LS6ATMA1 Infineon-BSC010N04LS6-DS-v02_00-EN.pdf?fileId=5546d462689a790c0168bd076e184818
BSC010N04LS6ATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 40V 40A/100A TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 1mOhm @ 50A, 10V
Power Dissipation (Max): 3W (Ta), 150W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: PG-TDSON-8-6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 67 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 4600 pF @ 20 V
auf Bestellung 9468 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
6+3.41 EUR
10+2.37 EUR
100+1.82 EUR
500+1.45 EUR
1000+1.39 EUR
Mindestbestellmenge: 6
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BSC022N04LS6ATMA1 Infineon-BSC022N04LS6-DS-v02_00-EN.pdf?fileId=5546d462689a790c0168bd1094dc481b
BSC022N04LS6ATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 40V 27A/100A TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 27A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 2.2mOhm @ 50A, 10V
Power Dissipation (Max): 3W (Ta), 79W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: PG-TDSON-8-1
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 20 V
auf Bestellung 7767 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
8+2.39 EUR
10+1.81 EUR
100+1.31 EUR
500+1.04 EUR
1000+0.97 EUR
Mindestbestellmenge: 8
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AUXDILZ24NS
Hersteller: Infineon Technologies
Description: MOSFET N-CH D2PAK
Packaging: Tape & Reel (TR)
Part Status: Obsolete
Produkt ist nicht verfügbar
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IPD650P06NMSAUMA1 Power_Sensing_Selection_Guide_2021.pdf
IPD650P06NMSAUMA1
Hersteller: Infineon Technologies
Description: MOSFET P-CH 60V 22A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
Rds On (Max) @ Id, Vgs: 65mOhm @ 22A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1.04mA
Supplier Device Package: PG-TO252-3-313
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 30 V
Produkt ist nicht verfügbar
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IPD950P06NMSAUMA1
IPD950P06NMSAUMA1
Hersteller: Infineon Technologies
Description: MOSFET P-CH 60V TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Supplier Device Package: PG-TO252-3-313
Part Status: Active
Drain to Source Voltage (Vdss): 60 V
Produkt ist nicht verfügbar
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IPD06P003NSAUMA1
IPD06P003NSAUMA1
Hersteller: Infineon Technologies
Description: MOSFET P-CH 60V 22A TO252-3
Produkt ist nicht verfügbar
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IDWD15G120C5XKSA1 Infineon-IDWD15G120C5-DS-v02_00-EN.pdf?fileId=5546d462689a790c016933d54d2b5489
IDWD15G120C5XKSA1
Hersteller: Infineon Technologies
Description: DIODE SIL CARB 1.2KV 49A TO247-2
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 1050pF @ 1V, 1MHz
Current - Average Rectified (Io): 49A
Supplier Device Package: PG-TO247-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.65 V @ 15 A
Current - Reverse Leakage @ Vr: 124 µA @ 1200 V
auf Bestellung 230 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+18.88 EUR
10+16.18 EUR
100+13.49 EUR
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IKP28N65ES5XKSA1 Infineon-IKP28N65ES5-DS-v02_01-EN.pdf?fileId=5546d462696dbf1201697b6e31284429
IKP28N65ES5XKSA1
Hersteller: Infineon Technologies
Description: IGBT TRENCH FS 650V 38A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 73 ns
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 28A
Supplier Device Package: PG-TO220-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 27ns/184ns
Switching Energy: 530µJ (on), 400µJ (off)
Test Condition: 400V, 28A, 34Ohm, 15V
Gate Charge: 50 nC
Part Status: Active
Current - Collector (Ic) (Max): 38 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 90 A
Power - Max: 130 W
Produkt ist nicht verfügbar
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IM393L6FXKLA1 Infineon-IM393-L6F-DS-v02_00-EN.pdf?fileId=5546d462696dbf1201699a946a8b78d2
IM393L6FXKLA1
Hersteller: Infineon Technologies
Description: POWER MODULE 600V 15A MDIP22
Packaging: Tube
Package / Case: 26-PowerSIP Module, 22 Leads, Formed Leads
Mounting Type: Through Hole
Type: IGBT
Configuration: 3 Phase Inverter
Voltage - Isolation: 2000Vrms
Part Status: Obsolete
Current: 15 A
Voltage: 600 V
Produkt ist nicht verfügbar
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IM393M6FXKLA1 Infineon-IM393-M6F-DS-v02_00-EN.pdf?fileId=5546d462696dbf1201699a947c0278da
IM393M6FXKLA1
Hersteller: Infineon Technologies
Description: POWER MODULE 600V 10A 26PWRSIP
Packaging: Tube
Package / Case: 26-PowerSIP Module, 22 Leads, Formed Leads
Mounting Type: Through Hole
Type: IGBT
Configuration: 3 Phase Inverter
Voltage - Isolation: 2000Vrms
Part Status: Obsolete
Current: 10 A
Voltage: 600 V
Produkt ist nicht verfügbar
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IM393S6FXKLA1 Infineon-IM393-S6F-DS-v02_00-EN.pdf?fileId=5546d462696dbf1201699a9d808378dd
IM393S6FXKLA1
Hersteller: Infineon Technologies
Description: POWER MODULE 600V 6A MDIP22
Packaging: Tube
Package / Case: 26-PowerSIP Module, 22 Leads, Formed Leads
Mounting Type: Through Hole
Type: IGBT
Configuration: 3 Phase Inverter
Voltage - Isolation: 2000Vrms
Part Status: Obsolete
Current: 6 A
Voltage: 600 V
Produkt ist nicht verfügbar
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IM393L6EXKLA1 Infineon-IM393-L6E-DS-v02_00-EN.pdf?fileId=5546d462696dbf1201699a8b350f78c7
IM393L6EXKLA1
Hersteller: Infineon Technologies
Description: POWER MODULE 600V 15A MDIP30
Packaging: Tube
Package / Case: 35-PowerDIP Module (0.866", 22.00mm), 30 Leads
Mounting Type: Through Hole
Type: IGBT
Configuration: 3 Phase Inverter
Voltage - Isolation: 2000Vrms
Part Status: Obsolete
Current: 15 A
Voltage: 600 V
Produkt ist nicht verfügbar
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IM393L6E3XKLA1 Infineon-IM393-L6E-DS-v02_00-EN.pdf?fileId=5546d462696dbf1201699a8b350f78c7
Hersteller: Infineon Technologies
Description: POWER MODULE 600V 15A MDIP30
Packaging: Tube
Package / Case: 35-PowerDIP Module (0.866", 22.00mm), 30 Leads
Mounting Type: Through Hole
Type: IGBT
Configuration: 3 Phase Inverter
Voltage - Isolation: 2000Vrms
Part Status: Obsolete
Current: 15 A
Voltage: 600 V
Produkt ist nicht verfügbar
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IM393M6EXKLA1 Infineon-IM393-M6E-DS-v02_00-EN.pdf?fileId=5546d462696dbf1201699a94732278d5
IM393M6EXKLA1
Hersteller: Infineon Technologies
Description: POWER MODULE 600V 10A MDIP30
Packaging: Tube
Package / Case: 35-PowerDIP Module (0.866", 22.00mm), 30 Leads
Mounting Type: Through Hole
Type: IGBT
Configuration: 3 Phase Inverter
Voltage - Isolation: 2000Vrms
Part Status: Obsolete
Current: 10 A
Voltage: 600 V
Produkt ist nicht verfügbar
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IM393M6E2XKLA1 Infineon-IM393-M6E-DS-v02_00-EN.pdf?fileId=5546d462696dbf1201699a94732278d5
IM393M6E2XKLA1
Hersteller: Infineon Technologies
Description: POWER MODULE 600V 10A MDIP30
Packaging: Tube
Package / Case: 35-PowerDIP Module (0.866", 22.00mm), 30 Leads
Mounting Type: Through Hole
Type: IGBT
Configuration: 3 Phase Inverter
Voltage - Isolation: 2000Vrms
Part Status: Obsolete
Current: 10 A
Voltage: 600 V
Produkt ist nicht verfügbar
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IM393M6E3XKLA1 Infineon-IM393-M6E-DS-v02_00-EN.pdf?fileId=5546d462696dbf1201699a94732278d5
IM393M6E3XKLA1
Hersteller: Infineon Technologies
Description: POWER MODULE 600V 10A MDIP30
Packaging: Tube
Package / Case: 35-PowerDIP Module (0.866", 22.00mm), 30 Leads
Mounting Type: Through Hole
Type: IGBT
Configuration: 3 Phase Inverter
Voltage - Isolation: 2000Vrms
Part Status: Obsolete
Current: 10 A
Voltage: 600 V
Produkt ist nicht verfügbar
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IM393S6E2XKLA1 Infineon-IM393-S6E-DS-v02_00-EN.pdf?fileId=5546d462696dbf1201699a9d912478e4
IM393S6E2XKLA1
Hersteller: Infineon Technologies
Description: POWER MODULE 600V 6A MDIP30
Packaging: Tube
Package / Case: 35-PowerDIP Module (0.866", 22.00mm), 30 Leads
Mounting Type: Through Hole
Type: IGBT
Configuration: 3 Phase Inverter
Voltage - Isolation: 2000Vrms
Part Status: Obsolete
Current: 6 A
Voltage: 600 V
Produkt ist nicht verfügbar
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IM393X6EXKLA1 Infineon-IM393-X6E-DS-v02_00-EN.pdf?fileId=5546d462696dbf1201699a9d9a3578e9
IM393X6EXKLA1
Hersteller: Infineon Technologies
Description: POWER MODULE 600V 20A MDIP30
Packaging: Tube
Package / Case: 35-PowerDIP Module (0.866", 22.00mm), 30 Leads
Mounting Type: Through Hole
Type: IGBT
Configuration: 3 Phase Inverter
Voltage - Isolation: 2000Vrms
Part Status: Obsolete
Current: 20 A
Voltage: 600 V
Produkt ist nicht verfügbar
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EVALM1IM231TOBO1 Infineon-IM231-L6S1B_T2B-DS-v02_00-EN.pdf?fileId=5546d462689a790c0169067334d10ef3
Hersteller: Infineon Technologies
Description: EVAL IM231 CIPOS MICRO IPM
auf Bestellung 2 Stücke:
Lieferzeit 10-14 Tag (e)
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EVALSHNBV01DPS422TOBO1 Infineon-Quick%20Setup%20Guide%20for%20Barometric%20Pressure%20Sensor%20Hub%20Nano-GS-v01_01-EN.pdf?fileId=5546d46269bda8df0169bf3dccc11a5c
EVALSHNBV01DPS422TOBO1
Hersteller: Infineon Technologies
Description: EVAL DPS422 BAROMETRIC HUB
Packaging: Bulk
Interface: RF
Contents: Board(s)
Sensor Type: Pressure
Utilized IC / Part: DPS422, XMC1100
Supplied Contents: Board(s)
Embedded: Yes, MCU, 32-Bit
Produkt ist nicht verfügbar
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S2GOPRESSUREDPS422TOBO1
S2GOPRESSUREDPS422TOBO1
Hersteller: Infineon Technologies
Description: EVAL DPS422 BAROMETRIC
Packaging: Bulk
Function: Barometer
Type: Sensor
Contents: Board(s)
Utilized IC / Part: DPS422
Platform: Shield2Go
Produkt ist nicht verfügbar
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TLF50211ELXUMA2 Infineon-TLF50211EL-DS-v01_10-EN.pdf?fileId=5546d46258fc0bc1015969d2af9641e9
TLF50211ELXUMA2
Hersteller: Infineon Technologies
Description: IC REG BUCK 5V 500MA SSOP-14-3
Packaging: Cut Tape (CT)
Package / Case: 14-LSSOP (0.154", 3.90mm Width) Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 500mA
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Frequency - Switching: 2.25MHz
Voltage - Input (Max): 45V
Topology: Buck
Supplier Device Package: PG-SSOP-14-3
Synchronous Rectifier: No
Voltage - Input (Min): 4.75V
Voltage - Output (Min/Fixed): 5V
Grade: Automotive
Part Status: Active
Qualification: AEC-Q100
auf Bestellung 2313 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5+3.94 EUR
10+2.94 EUR
25+2.69 EUR
100+2.41 EUR
250+2.28 EUR
500+2.20 EUR
1000+2.13 EUR
Mindestbestellmenge: 5
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AUIR3241SDEMOBOARDTOBO1 Infineon-AUIR3241S%20DEMOBOARD-DS-v01_00-EN.pdf?fileId=5546d46265f064ff016667e5d4133c3f
AUIR3241SDEMOBOARDTOBO1
Hersteller: Infineon Technologies
Description: EVAL BOARD FOR AUIR3241S
Packaging: Bulk
Function: Gate Driver
Type: Power Management
Contents: Board(s)
Utilized IC / Part: AUIR3241S
Supplied Contents: Board(s)
Part Status: Obsolete
auf Bestellung 2 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+158.79 EUR
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28576411 B
Hersteller: Infineon Technologies
Description: IC FLASH 24FBGA
Packaging: Tape & Reel (TR)
Technology: FLASH - NOR
Memory Format: FLASH
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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FM24W256-EGTR FM24W256_RevL_12-17-18.pdf
Hersteller: Infineon Technologies
Description: IC FRAM 256KBIT 8SOIC
Packaging: Tape & Reel (TR)
Memory Size: 256Kbit
Memory Format: FRAM
Part Status: Obsolete
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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FM24W256-EG FM24W256_RevL_12-17-18.pdf
Hersteller: Infineon Technologies
Description: IC FRAM 256KBIT 8SOIC
Packaging: Tray
Part Status: Obsolete
DigiKey Programmable: Not Verified
Memory Size: 256Kbit
Memory Format: FRAM
Produkt ist nicht verfügbar
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MB88386PMC-GS-TLE1
Hersteller: Infineon Technologies
Description: IC AUTO MCU 80LQFP
Packaging: Tray
Part Status: Obsolete
Produkt ist nicht verfügbar
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IKB20N60TATMA1 IKB20N60T+Rev2_4G.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a304412b407950112b42883273e12
IKB20N60TATMA1
Hersteller: Infineon Technologies
Description: IGBT TRENCH FS 600V 40A TO263-3
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 41 ns
Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 20A
Supplier Device Package: PG-TO263-3-2
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 18ns/199ns
Switching Energy: 770µJ
Test Condition: 400V, 20A, 12Ohm, 15V
Gate Charge: 120 nC
Part Status: Active
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 60 A
Power - Max: 166 W
auf Bestellung 7888 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+5.28 EUR
10+3.44 EUR
100+2.40 EUR
500+2.07 EUR
Mindestbestellmenge: 4
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IRS2093MTRPBF irs2093mpbf.pdf?fileId=5546d462533600a401535675fb892793
IRS2093MTRPBF
Hersteller: Infineon Technologies
Description: IC AMP CLASS D QUAD 48MLPQ
Features: Depop, Short-Circuit Protection, Shutdown
Packaging: Cut Tape (CT)
Package / Case: 48-VFQFN Exposed Pad
Output Type: 4-Channel (Quad)
Mounting Type: Surface Mount
Type: Class D
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 10V ~ 15V
Supplier Device Package: PG-VQFN-48
Part Status: Active
auf Bestellung 2954 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+11.35 EUR
10+8.75 EUR
25+8.10 EUR
100+7.39 EUR
250+7.04 EUR
500+6.84 EUR
1000+6.67 EUR
Mindestbestellmenge: 2
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EVAL12W3PHSMP7TOBO1 Infineon-ApplicationNote_EvaluationBoard_EVAL_12W_3PH_SM_P7-AN-v01_00-EN.pdf?fileId=5546d46269e1c019016a7f8ee5ed40c1
EVAL12W3PHSMP7TOBO1
Hersteller: Infineon Technologies
Description: EVAL BOARD ICE5QSAG IPD95R1K2P7
Packaging: Bulk
Voltage - Output: 12V
Voltage - Input: 185 ~ 460 VAC
Current - Output: 1A
Contents: Board(s)
Regulator Topology: Flyback
Board Type: Fully Populated
Utilized IC / Part: ICE5QSAG, IPD95R1K2P7
Supplied Contents: Board(s)
Main Purpose: AC/DC, Primary Side
Outputs and Type: 1 Isolated Output
Part Status: Active
Power - Output: 12W
auf Bestellung 3 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+242.42 EUR
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TPM7012XENONBOARDTOBO1 Infineon-OPTIGA_TPM-PB-v10_15-EN.pdf?fileId=5546d46145da30e80145efa2f0b96a8e
TPM7012XENONBOARDTOBO1
Hersteller: Infineon Technologies
Description: EVAL TPM SLB9670 XENON
Packaging: Bulk
Function: Trusted Platform Module (TPM)
Type: Interface
Contents: Board(s)
Part Status: Obsolete
Produkt ist nicht verfügbar
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DPS368XTSA1 Infineon-DPS368-DS-v01_00-EN.pdf?fileId=5546d46269e1c019016a0c45105d4b40
DPS368XTSA1
Hersteller: Infineon Technologies
Description: SENSOR 17.4PSIG 24BIT 8VLGA
Packaging: Tape & Reel (TR)
Features: Temperature Compensated
Package / Case: 8-VFLGA
Output Type: I2C, SPI
Mounting Type: Surface Mount
Output: 24 b
Operating Pressure: 4.35PSI ~ 17.4PSI (30kPa ~ 120kPa)
Pressure Type: Vented Gauge
Accuracy: ±0.015PSI (±0.1kPa)
Operating Temperature: -40°C ~ 85°C
Termination Style: SMD (SMT) Tab
Voltage - Supply: 1.7V ~ 3.6V
Applications: Board Mount
Supplier Device Package: PG-VLGA-8-1
Port Style: No Port
Maximum Pressure: 145PSI (999.74kPa)
Part Status: Active
Produkt ist nicht verfügbar
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EVALSHNBV01DPS368TOBO1 Infineon-Quick%20Setup%20Guide%20for%20Barometric%20Pressure%20Sensor%20Hub%20Nano-GS-v01_01-EN.pdf?fileId=5546d46269bda8df0169bf3dccc11a5c
EVALSHNBV01DPS368TOBO1
Hersteller: Infineon Technologies
Description: SENSOR HUB NANO DPS368
Packaging: Bulk
Interface: I2C, Serial, SPI
Voltage - Supply: 1.7V ~ 3.6V
Sensor Type: Pressure
Utilized IC / Part: DPS368
Supplied Contents: Board(s)
Sensing Range: 300 ~ 1200 hPa
Part Status: Active
Contents: Board(s)
Produkt ist nicht verfügbar
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IPB12CN10NGATMA2
Hersteller: Infineon Technologies
Description: MOSFET N-CH 100V 67A TO263-3
Packaging: Tape & Reel (TR)
Part Status: Obsolete
Produkt ist nicht verfügbar
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IRF3717TRPBF-1 IRF3717PbF-1_7-25-14.pdf
IRF3717TRPBF-1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 20V 20A 8-SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Ta)
Rds On (Max) @ Id, Vgs: 4.4mOhm @ 20A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 2.45V @ 250µA
Supplier Device Package: 8-SOIC
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2890 pF @ 10 V
Produkt ist nicht verfügbar
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IRF7331TRPBF-1 IRF7331TRPbF-1_10-16-14.pdf
IRF7331TRPBF-1
Hersteller: Infineon Technologies
Description: MOSFET 2N-CH 20V 7A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W (Ta)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 1340pF @ 16V
Rds On (Max) @ Id, Vgs: 30mOhm @ 7A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 4.5V
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: 8-SOIC
Produkt ist nicht verfügbar
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IRF7904TRPBF-1 IRF7904PbF-1_5-19-14.pdf
IRF7904TRPBF-1
Hersteller: Infineon Technologies
Description: MOSFET 2N-CH 30V 7.6A/11A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.4W, 2W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 7.6A, 11A
Input Capacitance (Ciss) (Max) @ Vds: 910pF @ 15V
Rds On (Max) @ Id, Vgs: 16.2mOhm @ 7.6A, 10V
Gate Charge (Qg) (Max) @ Vgs: 11nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.25V @ 25µA
Supplier Device Package: 8-SO
Part Status: Obsolete
Produkt ist nicht verfügbar
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IRFC048N
Hersteller: Infineon Technologies
Description: MOSFET N-CH
Packaging: Bulk
Part Status: Obsolete
Produkt ist nicht verfügbar
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IRFC048NB
Hersteller: Infineon Technologies
Description: MOSFET N-CH
Produkt ist nicht verfügbar
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BTS500101TADATMA2 BTS50010-1TA_rev1.2_12-5-17.pdf
BTS500101TADATMA2
Hersteller: Infineon Technologies
Description: IC PWR HIC-PROFET N-CH 1:1 TO263
Packaging: Cut Tape (CT)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab), TO-263CB
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 1.6mOhm
Input Type: Non-Inverting
Voltage - Load: 8V ~ 18V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 48A
Ratio - Input:Output: 1:1
Supplier Device Package: P/PG-TO-263-7-10
Fault Protection: Over Temperature, Over Voltage, Reverse Battery, Short Circuit
Grade: Automotive
Part Status: Active
Qualification: AEC-Q100
auf Bestellung 1529 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+9.26 EUR
10+7.10 EUR
25+6.56 EUR
100+5.96 EUR
250+5.68 EUR
500+5.51 EUR
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S25FL132K0XMFN013 S25FL116K,S25FL132K,S25FL164K.pdf
S25FL132K0XMFN013
Hersteller: Infineon Technologies
Description: IC FLASH 32MBIT SPI/QUAD 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Memory Size: 32Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 108 MHz
Memory Format: FLASH
Supplier Device Package: 8-SOIC
Part Status: Obsolete
Write Cycle Time - Word, Page: 3ms
Memory Interface: SPI - Quad I/O
Memory Organization: 4M x 8
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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S25FL032P0XBHI033 S25FL032P.pdf
S25FL032P0XBHI033
Hersteller: Infineon Technologies
Description: IC FLASH 32MBIT SPI/QUAD 24BGA
Packaging: Cut Tape (CT)
Package / Case: 24-TBGA
Mounting Type: Surface Mount
Memory Size: 32Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 104 MHz
Memory Format: FLASH
Supplier Device Package: 24-BGA (6x8)
Part Status: Obsolete
Write Cycle Time - Word, Page: 5µs, 3ms
Memory Interface: SPI - Quad I/O
Memory Organization: 4M x 8
DigiKey Programmable: Not Verified
auf Bestellung 2432 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
9+2.16 EUR
10+1.92 EUR
25+1.83 EUR
50+1.76 EUR
100+1.70 EUR
250+1.62 EUR
500+1.57 EUR
1000+1.51 EUR
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IPB90R340C3ATMA2 Infineon-IPB90R340C3-DS-v02_00-en.pdf?fileId=db3a304336c52a950136c5c59ef500ad
IPB90R340C3ATMA2
Hersteller: Infineon Technologies
Description: MOSFET N-CH 900V 15A TO263-3
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 340mOhm @ 9.2A, 10V
Power Dissipation (Max): 208W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 1mA
Supplier Device Package: PG-TO263-3-2
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 94 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 100 V
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1000+4.86 EUR
Mindestbestellmenge: 1000
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IPB90R340C3ATMA2 Infineon-IPB90R340C3-DS-v02_00-en.pdf?fileId=db3a304336c52a950136c5c59ef500ad
IPB90R340C3ATMA2
Hersteller: Infineon Technologies
Description: MOSFET N-CH 900V 15A TO263-3
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 340mOhm @ 9.2A, 10V
Power Dissipation (Max): 208W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 1mA
Supplier Device Package: PG-TO263-3-2
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 94 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 100 V
auf Bestellung 1824 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+9.42 EUR
10+7.90 EUR
100+6.39 EUR
500+5.68 EUR
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IPI90R1K2C3XKSA2 Infineon-IPI90R1K2C3-DS-v01_00-en.pdf?fileId=db3a30432313ff5e0123a85db6ae5bb3
IPI90R1K2C3XKSA2
Hersteller: Infineon Technologies
Description: MOSFET N-CH 900V 5.1A TO262-3
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.1A (Tc)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 2.8A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 310µA
Supplier Device Package: PG-TO262-3-1
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 710 pF @ 100 V
Produkt ist nicht verfügbar
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BFS 17P E8211
BFS 17P E8211
Hersteller: Infineon Technologies
Description: RF TRANS NPN SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Power - Max: 280mW
Current - Collector (Ic) (Max): 25mA
Voltage - Collector Emitter Breakdown (Max): 15V
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 2mA, 1V
Frequency - Transition: 1.4GHz
Noise Figure (dB Typ @ f): 3.5dB @ 800MHz
Supplier Device Package: PG-SOT23
Part Status: Active
Produkt ist nicht verfügbar
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BFS17PE6752HTSA1
BFS17PE6752HTSA1
Hersteller: Infineon Technologies
Description: RF TRANS NPN 15V 1.4GHZ PG-SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Power - Max: 280mW
Current - Collector (Ic) (Max): 25mA
Voltage - Collector Emitter Breakdown (Max): 15V
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 2mA, 1V
Frequency - Transition: 1.4GHz
Noise Figure (dB Typ @ f): 3.5dB @ 800MHz
Supplier Device Package: PG-SOT23
Part Status: Last Time Buy
Produkt ist nicht verfügbar
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BFS17WH6393XTSA1
BFS17WH6393XTSA1
Hersteller: Infineon Technologies
Description: RF TRANS NPN SOT323-3
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Power - Max: 280mW
Current - Collector (Ic) (Max): 25mA
Voltage - Collector Emitter Breakdown (Max): 15V
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 2mA, 1V
Frequency - Transition: 1.4GHz
Noise Figure (dB Typ @ f): 3.5dB @ 800MHz
Supplier Device Package: PG-SOT323
Part Status: Active
Produkt ist nicht verfügbar
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FD450R12KE4PHOSA1 Infineon-FD450R12KE4P-DataSheet-v02_00-EN.pdf?fileId=5546d4626b2d8e69016b54a4ce416fd0
FD450R12KE4PHOSA1
Hersteller: Infineon Technologies
Description: IGBT MODULE 1200V 450A AG62MM-1
auf Bestellung 56 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+352.12 EUR
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REFAUDIOAMA12040TOBO1 Infineon-UserManual_ClassD_audio_MA120xxx_reference_boards-ApplicationNotes-v01_00-EN.pdf?fileId=5546d46269bda8df0169da3392a743bd
REFAUDIOAMA12040TOBO1
Hersteller: Infineon Technologies
Description: EVAL MA12040 CLASS D AMP
Packaging: Bulk
Output Type: 2-Channel (Stereo)
Amplifier Type: Class D
Voltage - Supply: 5V ~ 18V
Max Output Power x Channels @ Load: 40W x 2 @ 4Ohm
Board Type: Fully Populated
Utilized IC / Part: MA12040
Supplied Contents: Board(s)
auf Bestellung 1 Stücke:
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Anzahl Preis
1+97.12 EUR
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REFAUDIODMA12040PTOBO1 Infineon-UserManual_ClassD_audio_MA120xxx_reference_boards-ApplicationNotes-v01_00-EN.pdf?fileId=5546d46269bda8df0169da3392a743bd
REFAUDIODMA12040PTOBO1
Hersteller: Infineon Technologies
Description: EVAL BOARD FOR MA12040P
Packaging: Bulk
Output Type: 2-Channel (Stereo)
Amplifier Type: Class D
Voltage - Supply: 5V ~ 18V
Max Output Power x Channels @ Load: 40W x 2 @ 4Ohm
Board Type: Fully Populated
Utilized IC / Part: MA12040P
Supplied Contents: Board(s)
Contents: Board(s)
auf Bestellung 3 Stücke:
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Anzahl Preis
1+99.39 EUR
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IPB156N22NFDATMA1 Infineon-IPB156N22NFD-DS-v02_00-EN.pdf?fileId=5546d4625d5945ed015dacb0bcce22e7
IPB156N22NFDATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 220V 72A TO263-3
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 72A (Tc)
Rds On (Max) @ Id, Vgs: 15.6mOhm @ 50A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 270µA
Supplier Device Package: PG-TO263-3-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 220 V
Gate Charge (Qg) (Max) @ Vgs: 87 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6930 pF @ 110 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 110
auf Bestellung 1012 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+13.32 EUR
10+9.07 EUR
100+6.66 EUR
500+5.92 EUR
Mindestbestellmenge: 2
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IPT029N08N5ATMA1 Infineon-IPT029N08N5-DS-v02_00-EN.pdf?fileId=5546d46258f240be0158f28c77120098
IPT029N08N5ATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 80V 52A/169A HSOF-8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 52A (Ta), 169A (Tc)
Rds On (Max) @ Id, Vgs: 2.9mOhm @ 150A, 10V
Power Dissipation (Max): 168W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 108µA
Supplier Device Package: PG-HSOF-8-1
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 87 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6500 pF @ 40 V
Produkt ist nicht verfügbar
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