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SIDC14D60C8X1SA1 Infineon Technologies Infineon-SIDC14D60C8_L4024M-DS-v01_02-en.pdf?fileId=db3a30433c8a9179013c8ff64902577e Description: DIODE STANDARD 600V 50A DIE
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 50A
Supplier Device Package: Die
Operating Temperature - Junction: -40°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.9 V @ 50 A
Current - Reverse Leakage @ Vr: 27 µA @ 600 V
Produkt ist nicht verfügbar
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SIDC04D60F6X7SA1 Infineon Technologies Description: DIODE STANDARD 600V 9A DIE
Current - Reverse Leakage @ Vr: 27 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 9 A
Voltage - DC Reverse (Vr) (Max): 600 V
Operating Temperature - Junction: -40°C ~ 175°C
Supplier Device Package: Die
Current - Average Rectified (Io): 9A
Technology: Standard
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: Die
Packaging: Bulk
Produkt ist nicht verfügbar
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SIGC61T60NCX1SA1 Infineon Technologies SIGC61T60NC_ed2_11-28-03.pdf Description: IGBT 3 CHIP 600V WAFER
Produkt ist nicht verfügbar
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SIDC06D60E6X7SA1 Infineon Technologies Description: DIODE STANDARD 600V 10A DIE
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 10A
Supplier Device Package: Die
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 10 A
Current - Reverse Leakage @ Vr: 27 µA @ 600 V
Produkt ist nicht verfügbar
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SIGC81T60NCX7SA1 SIGC81T60NCX7SA1 Infineon Technologies Description: IGBT 3 CHIP 600V WAFER
Current - Collector Pulsed (Icm): 300 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 100 A
Part Status: Obsolete
Test Condition: 300V, 100A, 2.2Ohm, 15V
Td (on/off) @ 25°C: 95ns/200ns
IGBT Type: NPT
Supplier Device Package: Die
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 100A
Input Type: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: Die
Packaging: Bulk
Produkt ist nicht verfügbar
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SIDC14D60F6X7SA1 Infineon Technologies Description: DIODE STANDARD 600V 45A DIE
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 45A
Supplier Device Package: Die
Operating Temperature - Junction: -40°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 45 A
Current - Reverse Leakage @ Vr: 27 µA @ 600 V
Produkt ist nicht verfügbar
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SIGC42T60NCX7SA1 Infineon Technologies Description: IGBT 3 CHIP 600V WAFER
Current - Collector Pulsed (Icm): 150 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 50 A
Part Status: Obsolete
Test Condition: 300V, 50A, 3.3Ohm, 15V
Td (on/off) @ 25°C: 43ns/130ns
IGBT Type: NPT
Supplier Device Package: Die
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 50A
Input Type: Standard
Operating Temperature: -55°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: Die
Packaging: Bulk
Produkt ist nicht verfügbar
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SIDC06D60F6X1SA4 Infineon Technologies SIDC06D60F6_ed2.1_9-3-10.pdf Description: DIODE STANDARD 600V 15A DIE
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 15A
Supplier Device Package: Die
Operating Temperature - Junction: -40°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 15 A
Current - Reverse Leakage @ Vr: 27 µA @ 600 V
Produkt ist nicht verfügbar
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SIDC14D60F6X1SA4 Infineon Technologies SIDC14D60F6_ed2.1_9-3-10.pdf Description: DIODE STANDARD 600V 45A DIE
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 45A
Supplier Device Package: Die
Operating Temperature - Junction: -40°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 45 A
Current - Reverse Leakage @ Vr: 27 µA @ 600 V
Produkt ist nicht verfügbar
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SIDC08D60C8X7SA1 Infineon Technologies Description: DIODE GEN PURP 600V 30A DIE
Current - Reverse Leakage @ Vr: 27 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.95 V @ 30 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Active
Operating Temperature - Junction: -40°C ~ 175°C
Supplier Device Package: Die
Current - Average Rectified (Io): 30A
Technology: Standard
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: Die
Packaging: Bulk
Produkt ist nicht verfügbar
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SIDC14D60C8X7SA1 Infineon Technologies Description: DIODE GEN PURP 600V 50A DIE
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Active
Operating Temperature - Junction: -40°C ~ 175°C
Supplier Device Package: Die
Current - Average Rectified (Io): 50A
Technology: Standard
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: Die
Packaging: Bulk
Current - Reverse Leakage @ Vr: 27 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.9 V @ 50 A
Produkt ist nicht verfügbar
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SIDC06D65C8X1SA1 SIDC06D65C8X1SA1 Infineon Technologies Infineon-SIDC06D65C8_L4017C-DS-v01_00-en.pdf?fileId=db3a30433c9100bf013c915c15370045 Description: DIODE STANDARD 650V 20A DIE
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 20A
Supplier Device Package: Die
Operating Temperature - Junction: -40°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.87 V @ 20 A
Current - Reverse Leakage @ Vr: 240 nA @ 650 V
Produkt ist nicht verfügbar
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SIGC42T60SNCX7SA1 Infineon Technologies Description: IGBT 3 CHIP 600V WAFER
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 50A
Input Type: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: Die
Packaging: Bulk
Current - Collector Pulsed (Icm): 150 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 50 A
Test Condition: 400V, 50A, 6.8Ohm, 15V
Td (on/off) @ 25°C: 57ns/380ns
IGBT Type: NPT
Supplier Device Package: Die
Produkt ist nicht verfügbar
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SIDC08D60C8X1SA2 Infineon Technologies Infineon-SIDC08D60C8_L4022M-DS-v01_02-en.pdf?fileId=db3a30433c8a9179013c8feff14c5770 Description: DIODE GEN PURP 600V 30A DIE
Current - Reverse Leakage @ Vr: 27 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.95 V @ 30 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Active
Operating Temperature - Junction: -40°C ~ 175°C
Supplier Device Package: Die
Current - Average Rectified (Io): 30A
Technology: Standard
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: Die
Packaging: Bulk
Produkt ist nicht verfügbar
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SIDC06D60F6X7SA1 Infineon Technologies Description: DIODE STANDARD 600V 15A DIE
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 15A
Supplier Device Package: Die
Operating Temperature - Junction: -40°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 15 A
Current - Reverse Leakage @ Vr: 27 µA @ 600 V
Produkt ist nicht verfügbar
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SIDC06D60F6X1SA2 Infineon Technologies SIDC06D60F6_ed2.1_9-3-10.pdf Description: DIODE STANDARD 600V 15A DIE
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 15A
Supplier Device Package: Die
Operating Temperature - Junction: -40°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 15 A
Current - Reverse Leakage @ Vr: 27 µA @ 600 V
Produkt ist nicht verfügbar
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SIDC06D60E6X1SA1 Infineon Technologies SIDC06D60E6_ed1_3-12-01.pdf Description: DIODE STANDARD 600V 10A DIE
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 10A
Supplier Device Package: Die
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 10 A
Current - Reverse Leakage @ Vr: 27 µA @ 600 V
Produkt ist nicht verfügbar
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SIDC14D60E6X1SA4 Infineon Technologies SIDC14D60E6_ed1_7-1-02.pdf Description: DIODE STANDARD 600V 30A DIE
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 30A
Supplier Device Package: Die
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 30 A
Current - Reverse Leakage @ Vr: 27 µA @ 600 V
Produkt ist nicht verfügbar
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SIGC25T60UNX7SA1 Infineon Technologies Description: IGBT 3 CHIP 600V WAFER
Produkt ist nicht verfügbar
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SIGC61T60NCX7SA1 SIGC61T60NCX7SA1 Infineon Technologies Description: IGBT 3 CHIP 600V WAFER
Current - Collector Pulsed (Icm): 225 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 75 A
Test Condition: 300V, 75A, 3Ohm, 15V
Td (on/off) @ 25°C: 65ns/170ns
IGBT Type: NPT
Supplier Device Package: Die
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 75A
Input Type: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: Die
Packaging: Bulk
Produkt ist nicht verfügbar
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SIDC14D60E6X1SA3 Infineon Technologies SIDC14D60E6_ed1_7-1-02.pdf Description: DIODE STANDARD 600V 30A DIE
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 30A
Supplier Device Package: Die
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 30 A
Current - Reverse Leakage @ Vr: 27 µA @ 600 V
Produkt ist nicht verfügbar
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SIDC06D60E6X1SA4 Infineon Technologies SIDC06D60E6_ed1_3-12-01.pdf Description: DIODE STANDARD 600V 10A DIE
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 10A
Supplier Device Package: Die
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 10 A
Current - Reverse Leakage @ Vr: 27 µA @ 600 V
Produkt ist nicht verfügbar
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SIDC04D60F6X1SA2 Infineon Technologies SIDC04D60F6_ed2.1_9-3-10.pdf Description: DIODE STANDARD 600V 9A DIE
Packaging: Bulk
Current - Reverse Leakage @ Vr: 27 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 9 A
Voltage - DC Reverse (Vr) (Max): 600 V
Operating Temperature - Junction: -40°C ~ 175°C
Supplier Device Package: Die
Current - Average Rectified (Io): 9A
Technology: Standard
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: Die
Produkt ist nicht verfügbar
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SIDC14D60C8X1SA3 Infineon Technologies Infineon-SIDC14D60C8_L4024M-DS-v01_02-en.pdf?fileId=db3a30433c8a9179013c8ff64902577e Description: DIODE GEN PURP 600V 50A DIE
Current - Reverse Leakage @ Vr: 27 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.9 V @ 50 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Active
Operating Temperature - Junction: -40°C ~ 175°C
Supplier Device Package: Die
Current - Average Rectified (Io): 50A
Technology: Standard
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: Die
Packaging: Bulk
Produkt ist nicht verfügbar
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SIDC14D60F6X1SA3 Infineon Technologies SIDC14D60F6_ed2.1_9-3-10.pdf Description: DIODE STANDARD 600V 45A DIE
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 45A
Supplier Device Package: Die
Operating Temperature - Junction: -40°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 45 A
Current - Reverse Leakage @ Vr: 27 µA @ 600 V
Produkt ist nicht verfügbar
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SIDC26D60C8X1SA1 SIDC26D60C8X1SA1 Infineon Technologies Infineon-SIDC26D60C8_L4028M-DS-v01_02-en.pdf?fileId=db3a30433c8a9179013c9039e2405834 Description: DIODE STANDARD 600V 100A DIE
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 100A
Supplier Device Package: Die
Operating Temperature - Junction: -40°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.9 V @ 100 A
Current - Reverse Leakage @ Vr: 27 µA @ 600 V
Current Coupled to Voltage - Forward (Vf) (Max) @ If: 100
Voltage Coupled to Current - Reverse Leakage @ Vr: 600
Produkt ist nicht verfügbar
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SIDC08D60C8X1SA1 Infineon Technologies Infineon-SIDC08D60C8_L4022M-DS-v01_02-en.pdf?fileId=db3a30433c8a9179013c8feff14c5770 Description: DIODE GEN PURP 600V 30A DIE
Current - Reverse Leakage @ Vr: 27 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.95 V @ 30 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Active
Operating Temperature - Junction: -40°C ~ 175°C
Supplier Device Package: Die
Current - Average Rectified (Io): 30A
Technology: Standard
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: Die
Packaging: Bulk
Produkt ist nicht verfügbar
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SIDC04D60F6X1SA4 Infineon Technologies SIDC04D60F6_ed2.1_9-3-10.pdf Description: DIODE STANDARD 600V 9A DIE
Mounting Type: Surface Mount
Package / Case: Die
Packaging: Bulk
Current - Reverse Leakage @ Vr: 27 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 9 A
Voltage - DC Reverse (Vr) (Max): 600 V
Operating Temperature - Junction: -40°C ~ 175°C
Supplier Device Package: Die
Current - Average Rectified (Io): 9A
Technology: Standard
Speed: Standard Recovery >500ns, > 200mA (Io)
Produkt ist nicht verfügbar
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SIGC25T60NCX7SA1 Infineon Technologies Description: IGBT 3 CHIP 600V WAFER
Produkt ist nicht verfügbar
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SIDC14D60F6X1SA1 Infineon Technologies SIDC14D60F6_ed2.1_9-3-10.pdf Description: DIODE STANDARD 600V 45A DIE
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 45A
Supplier Device Package: Die
Operating Temperature - Junction: -40°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 45 A
Current - Reverse Leakage @ Vr: 27 µA @ 600 V
Produkt ist nicht verfügbar
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SIGC81T60SNCX7SA1 SIGC81T60SNCX7SA1 Infineon Technologies Description: IGBT 3 CHIP 600V WAFER
Current - Collector Pulsed (Icm): 300 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 100 A
Part Status: Obsolete
Test Condition: 400V, 100A, 3.3Ohm, 15V
Td (on/off) @ 25°C: 65ns/450ns
IGBT Type: NPT
Supplier Device Package: Die
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 100A
Input Type: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: Die
Packaging: Bulk
Produkt ist nicht verfügbar
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SIDC14D60C8X1SA2 SIDC14D60C8X1SA2 Infineon Technologies Infineon-SIDC14D60C8_L4024M-DS-v01_02-en.pdf?fileId=db3a30433c8a9179013c8ff64902577e Description: DIODE STANDARD 600V 50A DIE
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 50A
Supplier Device Package: Die
Operating Temperature - Junction: -40°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.9 V @ 50 A
Current - Reverse Leakage @ Vr: 27 µA @ 600 V
Produkt ist nicht verfügbar
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REFICL5102HVU150WTOBO1 REFICL5102HVU150WTOBO1 Infineon Technologies Infineon-Referencedesign_REF-ICL-5102HV-U150W-ApplicationNotes-v01_00-EN.pdf?fileId=5546d4626eab8fbf016eac0dac4f0023 Description: EVAL BOARD FOR ICL5102HV
Contents: Board(s)
Part Status: Active
Outputs and Type: 1 Non-Isolated Output
Current - Output / Channel: 3A
Voltage - Input: 277 ~ 528 VAC
Voltage - Output: 17V ~ 48V
Packaging: Box
Supplied Contents: Board(s)
Utilized IC / Part: ICL5102HV
Produkt ist nicht verfügbar
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FS380R12A6T4BBPSA1 FS380R12A6T4BBPSA1 Infineon Technologies Infineon-FS380R12A6T4B-DataSheet-v03_01-EN.pdf?fileId=5546d4626da6c043016db9e750e268b1 Description: IGBT MODULE 1200V 380A
Input Capacitance (Cies) @ Vce: 19 nF @ 25 V
Current - Collector Cutoff (Max): 1 mA
Current - Collector (Ic) (Max): 380 A
Part Status: Active
IGBT Type: Trench Field Stop
Supplier Device Package: AG-HYBRIDD-2
NTC Thermistor: Yes
Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 250A
Operating Temperature: -40°C ~ 150°C (TJ)
Configuration: Three Phase Inverter
Input: Standard
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Tray
Power - Max: 870 W
Voltage - Collector Emitter Breakdown (Max): 1200 V
auf Bestellung 6 Stücke:
Lieferzeit 10-14 Tag (e)
1+1217.07 EUR
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TLE92108232QXXUMA1 TLE92108232QXXUMA1 Infineon Technologies Infineon-TLE92108-232QX-DataSheet-v01_00-EN.pdf?fileId=5546d462749a7c2d01749b3138d607ed Description: IC GATE DRVR HALF-BRIDGE 48VFQFN
Supplier Device Package: PG-VQFN-48-31
High Side Voltage - Max (Bootstrap): 950 V
Input Type: Non-Inverting
Voltage - Supply: 6V ~ 28V
Mounting Type: Surface Mount
Package / Case: 48-VFQFN Exposed Pad
Packaging: Tape & Reel (TR)
Part Status: Active
Current - Peak Output (Source, Sink): 100mA, 100mA
Gate Type: IGBT, MOSFET (N-Channel)
Number of Drivers: 2
Driven Configuration: Half-Bridge
Channel Type: Synchronous
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
 Mindestbestellmenge: 2500 Stücke
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FS950R08A6P2BBPSA1 FS950R08A6P2BBPSA1 Infineon Technologies Infineon-FS950R08A6P2B-DataSheet-v03_00-EN.pdf?fileId=5546d4626da6c043016db9e7586868b4 Description: IGBT MOD 750V 950A AG-HYBRIDD-2
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.35V @ 15V, 450A
NTC Thermistor: Yes
Supplier Device Package: AG-HYBRIDD-2
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 950 A
Voltage - Collector Emitter Breakdown (Max): 750 V
Power - Max: 870 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 80 nF @ 50 V
auf Bestellung 12 Stücke:
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TLS715B0TSNPBOARDTOBO1 TLS715B0TSNPBOARDTOBO1 Infineon Technologies Description: EVAL TLS715B0NAV50 LDO
Channels per IC: 1 - Single
Supplied Contents: Board(s)
Utilized IC / Part: TLS715B0NAV50
Board Type: Fully Populated
Regulator Type: Positive Fixed
Current - Output: 150mA
Voltage - Input: 4V ~ 40V
Voltage - Output: 5V
Packaging: Box
auf Bestellung 2 Stücke:
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TLE9210823QXAPPKITTOBO1 TLE9210823QXAPPKITTOBO1 Infineon Technologies TLE92108-23QX_APPKIT_Web.pdf Description: EVAL MOSFET DRVR TLE92018 MOTIX
Part Status: Active
Supplied Contents: Board(s)
Utilized IC / Part: TLE9210823
Type: Power Management
Function: Gate Driver
Packaging: Box
auf Bestellung 8 Stücke:
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EVALM5E1B1245NSICTOBO1 EVALM5E1B1245NSICTOBO1 Infineon Technologies Infineon-EVAL-M5-E1B1245N-SiC-ApplicationNotes-v01_00-EN.pdf?fileId=5546d4626cb27db2016d438785217e27 Description: EVAL COOLSIC MOSFET MOTOR DRIVER
Supplied Contents: Board(s)
Utilized IC / Part: 1EDI20H12AH
Type: Power Management
Function: Gate Driver
Packaging: Box
Contents: Board(s)
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TLE92108231QXXUMA1 TLE92108231QXXUMA1 Infineon Technologies Infineon-TLE92108-231QX-DataSheet-v01_00-EN.pdf?fileId=5546d462749a7c2d01749b323e140979 Description: IC GATE DRVR HALF-BRIDGE 48VFQFN
Part Status: Active
Current - Peak Output (Source, Sink): 100mA, 100mA
Gate Type: IGBT, N-Channel MOSFET
Number of Drivers: 2
Driven Configuration: Half-Bridge
Channel Type: Synchronous
Supplier Device Package: PG-VQFN-48-31
High Side Voltage - Max (Bootstrap): 950 V
Input Type: Non-Inverting
Voltage - Supply: 6V ~ 28V
Mounting Type: Surface Mount
DigiKey Programmable: Not Verified
Package / Case: 48-VFQFN Exposed Pad
Packaging: Tape & Reel (TR)
auf Bestellung 7500 Stücke:
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2500+3.69 EUR
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ICL5102HVXUMA1 ICL5102HVXUMA1 Infineon Technologies Infineon-ICL5102HV-DataSheet-v01_02-EN.pdf?fileId=5546d4626c1f3dc3016c70f543a736d6 Description: IC LED DRIVER OFFL NO 19DSO
Packaging: Tape & Reel (TR)
Package / Case: 20-SOIC (0.295", 7.50mm Width), 19 Leads
Mounting Type: Surface Mount
Number of Outputs: 1
Frequency: 1.3MHz
Type: AC DC Offline Switcher
Operating Temperature: -40°C ~ 150°C (TJ)
Applications: Lighting
Internal Switch(s): No
Topology: Half-Bridge
Supplier Device Package: PG-DSO-19-1
Dimming: No
Voltage - Supply (Min): 8.5V
Voltage - Supply (Max): 18V
Part Status: Active
auf Bestellung 3000 Stücke:
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1000+3.52 EUR
2000+3.44 EUR
3000+3.39 EUR
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TLD22522EPXUMA1 TLD22522EPXUMA1 Infineon Technologies Infineon-TLD2252-2EP-DataSheet-v01_00-EN.pdf?fileId=5546d4626da6c043016dba1517ee6995 Description: IC LED DRVR CTRLR PWM 14TSDSO
Grade: Automotive
Voltage - Supply (Max): 18V
Voltage - Supply (Min): 8.5V
Dimming: PWM
Supplier Device Package: PG-TSDSO-14
Topology: Switched Capacitor (Charge Pump)
Internal Switch(s): No
Current - Output / Channel: 120mA
Applications: Lighting
Operating Temperature: -40°C ~ 150°C (TJ)
Type: DC DC Controller
Number of Outputs: 2
Mounting Type: Surface Mount
Package / Case: 14-TSSOP (0.154", 3.90mm Width) Exposed Pad
Packaging: Tape & Reel (TR)
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TLD22522EPXUMA1 TLD22522EPXUMA1 Infineon Technologies Infineon-TLD2252-2EP-DataSheet-v01_00-EN.pdf?fileId=5546d4626da6c043016dba1517ee6995 Description: IC LED DRVR CTRLR PWM 14TSDSO
Package / Case: 14-TSSOP (0.154", 3.90mm Width) Exposed Pad
Packaging: Cut Tape (CT)
Grade: Automotive
Voltage - Supply (Max): 18V
Voltage - Supply (Min): 8.5V
Dimming: PWM
Supplier Device Package: PG-TSDSO-14
Topology: Switched Capacitor (Charge Pump)
Internal Switch(s): No
Current - Output / Channel: 120mA
Applications: Lighting
Operating Temperature: -40°C ~ 150°C (TJ)
Type: DC DC Controller
Number of Outputs: 2
Mounting Type: Surface Mount
auf Bestellung 2950 Stücke:
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8+2.89 EUR
10+2.11 EUR
25+1.9 EUR
100+1.69 EUR
250+1.59 EUR
500+1.52 EUR
1000+1.48 EUR
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ICL5102HVXUMA1 ICL5102HVXUMA1 Infineon Technologies Infineon-ICL5102HV-DataSheet-v01_02-EN.pdf?fileId=5546d4626c1f3dc3016c70f543a736d6 Description: IC LED DRIVER OFFL NO 19DSO
Packaging: Cut Tape (CT)
Package / Case: 20-SOIC (0.295", 7.50mm Width), 19 Leads
Mounting Type: Surface Mount
Number of Outputs: 1
Frequency: 1.3MHz
Type: AC DC Offline Switcher
Operating Temperature: -40°C ~ 150°C (TJ)
Applications: Lighting
Internal Switch(s): No
Topology: Half-Bridge
Supplier Device Package: PG-DSO-19-1
Dimming: No
Voltage - Supply (Min): 8.5V
Voltage - Supply (Max): 18V
Part Status: Active
auf Bestellung 3930 Stücke:
Lieferzeit 10-14 Tag (e)
4+6.41 EUR
10+4.81 EUR
25+4.4 EUR
100+3.96 EUR
250+3.76 EUR
500+3.63 EUR
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IRAUDAMP23 IRAUDAMP23 Infineon Technologies Infineon-IRAUDAMP23-DataSheet-v01_00-EN.pdf?fileId=5546d462677d0f4601679746020259b4 Description: EVAL BOARD FOR IRS2452AM
Amplifier Type: Class D
Output Type: 2-Channel (Stereo)
Packaging: Box
Contents: Board(s)
Part Status: Active
Supplied Contents: Board(s)
Utilized IC / Part: IRS2452AM
Board Type: Fully Populated
Max Output Power x Channels @ Load: 600W x 2 @ 20Ohm
Voltage - Supply: ±80V ~ 160V
auf Bestellung 3 Stücke:
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TLE5014SP16E0002XUMA1 TLE5014SP16E0002XUMA1 Infineon Technologies Infineon-TLE5014SP16%20E0002-DataSheet-v01_01-EN.pdf?fileId=5546d4626eab8fbf016ed1115f552acc Description: GMR-BASED ANGLE SENSOR
Packaging: Tape & Reel (TR)
Package / Case: 16-TSSOP (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Output: Wheatstone Bridge
Operating Temperature: -40°C ~ 125°C (TA)
Termination Style: Gull Wing
Voltage - Supply: 3V ~ 5.5V
Actuator Type: External Magnet, Not Included
Technology: Magnetoresistive
For Measuring: Angle
Supplier Device Package: PG-TDSO-16-1
Rotation Angle - Electrical, Mechanical: 0° ~ 360°, Continuous
Output Signal: Cosine, Sine
Part Status: Active
Grade: Automotive
Qualification: AEC-Q100
Produkt ist nicht verfügbar
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TLE5014SP16E0001XUMA1 TLE5014SP16E0001XUMA1 Infineon Technologies Infineon-TLE5014SP16%20E0001-DataSheet-v01_01-EN.pdf?fileId=5546d4626eab8fbf016ed1116a022ad0 Description: GMR-BASED ANGLE SENSOR
Packaging: Tape & Reel (TR)
Package / Case: 16-TSSOP (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Output: Wheatstone Bridge
Operating Temperature: -40°C ~ 125°C (TA)
Termination Style: Gull Wing
Voltage - Supply: 3V ~ 5.5V
Actuator Type: External Magnet, Not Included
Technology: Magnetoresistive
For Measuring: Angle
Supplier Device Package: PG-TDSO-16-1
Rotation Angle - Electrical, Mechanical: 0° ~ 360°, Continuous
Output Signal: Cosine, Sine
Part Status: Active
Produkt ist nicht verfügbar
 Mindestbestellmenge: 2500 Stücke
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TLE5014SP16E0001XUMA1 TLE5014SP16E0001XUMA1 Infineon Technologies Infineon-TLE5014SP16%20E0001-DataSheet-v01_01-EN.pdf?fileId=5546d4626eab8fbf016ed1116a022ad0 Description: GMR-BASED ANGLE SENSOR
Packaging: Cut Tape (CT)
Package / Case: 16-TSSOP (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Output: Wheatstone Bridge
Operating Temperature: -40°C ~ 125°C (TA)
Termination Style: Gull Wing
Voltage - Supply: 3V ~ 5.5V
Actuator Type: External Magnet, Not Included
Technology: Magnetoresistive
For Measuring: Angle
Supplier Device Package: PG-TDSO-16-1
Rotation Angle - Electrical, Mechanical: 0° ~ 360°, Continuous
Output Signal: Cosine, Sine
Part Status: Active
Produkt ist nicht verfügbar
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TLE5014SP16E0002XUMA1 TLE5014SP16E0002XUMA1 Infineon Technologies Infineon-TLE5014SP16%20E0002-DataSheet-v01_01-EN.pdf?fileId=5546d4626eab8fbf016ed1115f552acc Description: GMR-BASED ANGLE SENSOR
Packaging: Cut Tape (CT)
Package / Case: 16-TSSOP (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Output: Wheatstone Bridge
Operating Temperature: -40°C ~ 125°C (TA)
Termination Style: Gull Wing
Voltage - Supply: 3V ~ 5.5V
Actuator Type: External Magnet, Not Included
Technology: Magnetoresistive
For Measuring: Angle
Supplier Device Package: PG-TDSO-16-1
Rotation Angle - Electrical, Mechanical: 0° ~ 360°, Continuous
Output Signal: Cosine, Sine
Part Status: Active
Grade: Automotive
Qualification: AEC-Q100
auf Bestellung 59 Stücke:
Lieferzeit 10-14 Tag (e)
4+6.78 EUR
5+6.07 EUR
10+5.81 EUR
25+5.49 EUR
50+5.27 EUR
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BSC0403NSATMA1 BSC0403NSATMA1 Infineon Technologies Infineon-BSC0403NS-DataSheet-v02_01-EN.pdf?fileId=5546d462700c0ae6017015dda00a2215 Description: 150V, N-CH MOSFET, LOGIC LEVEL,
Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 75 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V
Drain to Source Voltage (Vdss): 150 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Supplier Device Package: PG-TDSON-8-7
Vgs(th) (Max) @ Id: 4.6V @ 91µA
Power Dissipation (Max): 125W (Tc)
Rds On (Max) @ Id, Vgs: 11mOhm @ 35A, 10
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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XDPS21071XUMA1 XDPS21071XUMA1 Infineon Technologies Infineon-XDPS21071-DataSheet-v01_00-EN.pdf?fileId=5546d4626e41e490016e632b3d382b14 Description: DIGITAL FFR CONTROLLER, DSO12
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.154", 3.90mm Width), 12 Leads
Output Type: Transistor Driver
Mounting Type: Surface Mount
Function: Step-Up/Step-Down
Operating Temperature: -25°C ~ 125°C (TJ)
Output Configuration: Positive
Frequency - Switching: 24.9kHz ~ 139.4kHz
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 3.3V
Supplier Device Package: PG-DSO-12-20
Synchronous Rectifier: No
Control Features: Current Limit, Soft Start
Output Phases: 1
Clock Sync: No
Number of Outputs: 1
Produkt ist nicht verfügbar
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REF_XDPS21071_45W1 REF_XDPS21071_45W1 Infineon Technologies Infineon-referencedesign_REF_XDPS21071_45W1-ApplicationNotes-v01_00-EN.pdf?fileId=5546d4626f229553016f9f594a4d19ee&redirId=121668 Description: 45W USB-PD 3.0 TYPE C CHARGER
auf Bestellung 1 Stücke:
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IPAN70R360P7SAUMA1 Infineon Technologies Infineon-IPAN70R360P7S-DS-v02_01-EN.pdf?fileId=5546d4625acbae4c015ad1977e2820c3 Description: 700V, N-CH MOSFET, TO220 FULLPAK
Produkt ist nicht verfügbar
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IMZA65R048M1HXKSA1 IMZA65R048M1HXKSA1 Infineon Technologies Infineon-IMZA65R048M1H-DataSheet-v02_00-EN.pdf?fileId=5546d4626f229553016f85d9ac090535 Description: MOSFET 650V NCH SIC TRENCH
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 39A (Tc)
Rds On (Max) @ Id, Vgs: 64mOhm @ 20.1A, 18V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 5.7V @ 6mA
Supplier Device Package: PG-TO247-4-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +23V, -5V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1118 pF @ 400 V
auf Bestellung 34 Stücke:
Lieferzeit 10-14 Tag (e)
2+20.19 EUR
30+11.97 EUR
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IPAN60R360PFD7SXKSA1 IPAN60R360PFD7SXKSA1 Infineon Technologies Infineon-IPAN60R360PFD7S-DataSheet-v02_01-EN.pdf?fileId=5546d4626df6ee62016e225ddfd96741 Description: MOSFET N-CH 650V 10A TO220
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 360mOhm @ 2.9A, 10V
Power Dissipation (Max): 23W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 140µA
Supplier Device Package: PG-TO220-FP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 12.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 534 pF @ 400 V
auf Bestellung 506 Stücke:
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50+1.52 EUR
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IMW65R048M1HXKSA1 IMW65R048M1HXKSA1 Infineon Technologies Infineon-IMW65R048M1H-DataSheet-v02_00-EN.pdf?fileId=5546d4626f229553016f85b4a66c0466 Description: MOSFET 650V NCH SIC TRENCH
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 39A (Tc)
Rds On (Max) @ Id, Vgs: 64mOhm @ 20.1A, 18V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 5.7V @ 6mA
Supplier Device Package: PG-TO247-3-41
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +23V, -5V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1118 pF @ 400 V
auf Bestellung 220 Stücke:
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1+22.54 EUR
30+13.34 EUR
120+11.33 EUR
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IPS60R600PFD7SAKMA1 IPS60R600PFD7SAKMA1 Infineon Technologies Infineon-IPS60R600PFD7S-DataSheet-v02_00-EN.pdf?fileId=5546d4626df6ee62016e2294e27e6797 Description: MOSFET N-CH 650V 6A TO251-3
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 1.7A, 10V
Power Dissipation (Max): 31W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 80µA
Supplier Device Package: PG-TO251-3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 8.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 344 pF @ 400 V
Produkt ist nicht verfügbar
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IPD60R280PFD7SAUMA1 IPD60R280PFD7SAUMA1 Infineon Technologies Infineon-IPD60R280PFD7S-DataSheet-v02_00-EN.pdf?fileId=5546d4626df6ee62016e22702a14674d Description: MOSFET N-CH 600V 12A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 3.6A, 10V
Power Dissipation (Max): 51W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 180µA
Supplier Device Package: PG-TO252-3-344
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 15.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 656 pF @ 400 V
Produkt ist nicht verfügbar
 Mindestbestellmenge: 2500 Stücke
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IMW65R107M1HXKSA1 IMW65R107M1HXKSA1 Infineon Technologies Infineon-IMW65R107M1H-DataSheet-v02_00-EN.pdf?fileId=5546d4626f229553016f85d01cd50485 Description: MOSFET 650V NCH SIC TRENCH
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 142mOhm @ 8.9A, 18V
Power Dissipation (Max): 75W (Tc)
Vgs(th) (Max) @ Id: 5.7V @ 3mA
Supplier Device Package: PG-TO247-3-41
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +23V, -5V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 496 pF @ 400 V
auf Bestellung 106 Stücke:
Lieferzeit 10-14 Tag (e)
2+11.21 EUR
30+6.4 EUR
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IPS60R1K0PFD7SAKMA1 IPS60R1K0PFD7SAKMA1 Infineon Technologies Infineon-IPS60R1K0PFD7S-DataSheet-v02_00-EN.pdf?fileId=5546d4626df6ee62016e2282a4c8675c Description: MOSFET N-CH 650V 4.7A TO251-3
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.7A (Tc)
Rds On (Max) @ Id, Vgs: 1Ohm @ 1A, 10V
Power Dissipation (Max): 26W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 50µA
Supplier Device Package: PG-TO251-3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 230 pF @ 400 V
Produkt ist nicht verfügbar
 Mindestbestellmenge: 1500 Stücke
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SIDC14D60C8X1SA1 Infineon-SIDC14D60C8_L4024M-DS-v01_02-en.pdf?fileId=db3a30433c8a9179013c8ff64902577e
Hersteller: Infineon Technologies
Description: DIODE STANDARD 600V 50A DIE
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 50A
Supplier Device Package: Die
Operating Temperature - Junction: -40°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.9 V @ 50 A
Current - Reverse Leakage @ Vr: 27 µA @ 600 V
Produkt ist nicht verfügbar
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SIDC04D60F6X7SA1
Hersteller: Infineon Technologies
Description: DIODE STANDARD 600V 9A DIE
Current - Reverse Leakage @ Vr: 27 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 9 A
Voltage - DC Reverse (Vr) (Max): 600 V
Operating Temperature - Junction: -40°C ~ 175°C
Supplier Device Package: Die
Current - Average Rectified (Io): 9A
Technology: Standard
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: Die
Packaging: Bulk
Produkt ist nicht verfügbar
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SIGC61T60NCX1SA1 SIGC61T60NC_ed2_11-28-03.pdf
Hersteller: Infineon Technologies
Description: IGBT 3 CHIP 600V WAFER
Produkt ist nicht verfügbar
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SIDC06D60E6X7SA1
Hersteller: Infineon Technologies
Description: DIODE STANDARD 600V 10A DIE
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 10A
Supplier Device Package: Die
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 10 A
Current - Reverse Leakage @ Vr: 27 µA @ 600 V
Produkt ist nicht verfügbar
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SIGC81T60NCX7SA1
SIGC81T60NCX7SA1
Hersteller: Infineon Technologies
Description: IGBT 3 CHIP 600V WAFER
Current - Collector Pulsed (Icm): 300 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 100 A
Part Status: Obsolete
Test Condition: 300V, 100A, 2.2Ohm, 15V
Td (on/off) @ 25°C: 95ns/200ns
IGBT Type: NPT
Supplier Device Package: Die
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 100A
Input Type: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: Die
Packaging: Bulk
Produkt ist nicht verfügbar
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SIDC14D60F6X7SA1
Hersteller: Infineon Technologies
Description: DIODE STANDARD 600V 45A DIE
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 45A
Supplier Device Package: Die
Operating Temperature - Junction: -40°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 45 A
Current - Reverse Leakage @ Vr: 27 µA @ 600 V
Produkt ist nicht verfügbar
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SIGC42T60NCX7SA1
Hersteller: Infineon Technologies
Description: IGBT 3 CHIP 600V WAFER
Current - Collector Pulsed (Icm): 150 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 50 A
Part Status: Obsolete
Test Condition: 300V, 50A, 3.3Ohm, 15V
Td (on/off) @ 25°C: 43ns/130ns
IGBT Type: NPT
Supplier Device Package: Die
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 50A
Input Type: Standard
Operating Temperature: -55°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: Die
Packaging: Bulk
Produkt ist nicht verfügbar
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SIDC06D60F6X1SA4 SIDC06D60F6_ed2.1_9-3-10.pdf
Hersteller: Infineon Technologies
Description: DIODE STANDARD 600V 15A DIE
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 15A
Supplier Device Package: Die
Operating Temperature - Junction: -40°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 15 A
Current - Reverse Leakage @ Vr: 27 µA @ 600 V
Produkt ist nicht verfügbar
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SIDC14D60F6X1SA4 SIDC14D60F6_ed2.1_9-3-10.pdf
Hersteller: Infineon Technologies
Description: DIODE STANDARD 600V 45A DIE
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 45A
Supplier Device Package: Die
Operating Temperature - Junction: -40°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 45 A
Current - Reverse Leakage @ Vr: 27 µA @ 600 V
Produkt ist nicht verfügbar
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SIDC08D60C8X7SA1
Hersteller: Infineon Technologies
Description: DIODE GEN PURP 600V 30A DIE
Current - Reverse Leakage @ Vr: 27 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.95 V @ 30 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Active
Operating Temperature - Junction: -40°C ~ 175°C
Supplier Device Package: Die
Current - Average Rectified (Io): 30A
Technology: Standard
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: Die
Packaging: Bulk
Produkt ist nicht verfügbar
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SIDC14D60C8X7SA1
Hersteller: Infineon Technologies
Description: DIODE GEN PURP 600V 50A DIE
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Active
Operating Temperature - Junction: -40°C ~ 175°C
Supplier Device Package: Die
Current - Average Rectified (Io): 50A
Technology: Standard
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: Die
Packaging: Bulk
Current - Reverse Leakage @ Vr: 27 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.9 V @ 50 A
Produkt ist nicht verfügbar
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SIDC06D65C8X1SA1 Infineon-SIDC06D65C8_L4017C-DS-v01_00-en.pdf?fileId=db3a30433c9100bf013c915c15370045
SIDC06D65C8X1SA1
Hersteller: Infineon Technologies
Description: DIODE STANDARD 650V 20A DIE
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 20A
Supplier Device Package: Die
Operating Temperature - Junction: -40°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.87 V @ 20 A
Current - Reverse Leakage @ Vr: 240 nA @ 650 V
Produkt ist nicht verfügbar
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SIGC42T60SNCX7SA1
Hersteller: Infineon Technologies
Description: IGBT 3 CHIP 600V WAFER
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 50A
Input Type: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: Die
Packaging: Bulk
Current - Collector Pulsed (Icm): 150 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 50 A
Test Condition: 400V, 50A, 6.8Ohm, 15V
Td (on/off) @ 25°C: 57ns/380ns
IGBT Type: NPT
Supplier Device Package: Die
Produkt ist nicht verfügbar
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SIDC08D60C8X1SA2 Infineon-SIDC08D60C8_L4022M-DS-v01_02-en.pdf?fileId=db3a30433c8a9179013c8feff14c5770
Hersteller: Infineon Technologies
Description: DIODE GEN PURP 600V 30A DIE
Current - Reverse Leakage @ Vr: 27 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.95 V @ 30 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Active
Operating Temperature - Junction: -40°C ~ 175°C
Supplier Device Package: Die
Current - Average Rectified (Io): 30A
Technology: Standard
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: Die
Packaging: Bulk
Produkt ist nicht verfügbar
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SIDC06D60F6X7SA1
Hersteller: Infineon Technologies
Description: DIODE STANDARD 600V 15A DIE
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 15A
Supplier Device Package: Die
Operating Temperature - Junction: -40°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 15 A
Current - Reverse Leakage @ Vr: 27 µA @ 600 V
Produkt ist nicht verfügbar
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SIDC06D60F6X1SA2 SIDC06D60F6_ed2.1_9-3-10.pdf
Hersteller: Infineon Technologies
Description: DIODE STANDARD 600V 15A DIE
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 15A
Supplier Device Package: Die
Operating Temperature - Junction: -40°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 15 A
Current - Reverse Leakage @ Vr: 27 µA @ 600 V
Produkt ist nicht verfügbar
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SIDC06D60E6X1SA1 SIDC06D60E6_ed1_3-12-01.pdf
Hersteller: Infineon Technologies
Description: DIODE STANDARD 600V 10A DIE
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 10A
Supplier Device Package: Die
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 10 A
Current - Reverse Leakage @ Vr: 27 µA @ 600 V
Produkt ist nicht verfügbar
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SIDC14D60E6X1SA4 SIDC14D60E6_ed1_7-1-02.pdf
Hersteller: Infineon Technologies
Description: DIODE STANDARD 600V 30A DIE
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 30A
Supplier Device Package: Die
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 30 A
Current - Reverse Leakage @ Vr: 27 µA @ 600 V
Produkt ist nicht verfügbar
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SIGC25T60UNX7SA1
Hersteller: Infineon Technologies
Description: IGBT 3 CHIP 600V WAFER
Produkt ist nicht verfügbar
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SIGC61T60NCX7SA1
SIGC61T60NCX7SA1
Hersteller: Infineon Technologies
Description: IGBT 3 CHIP 600V WAFER
Current - Collector Pulsed (Icm): 225 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 75 A
Test Condition: 300V, 75A, 3Ohm, 15V
Td (on/off) @ 25°C: 65ns/170ns
IGBT Type: NPT
Supplier Device Package: Die
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 75A
Input Type: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: Die
Packaging: Bulk
Produkt ist nicht verfügbar
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SIDC14D60E6X1SA3 SIDC14D60E6_ed1_7-1-02.pdf
Hersteller: Infineon Technologies
Description: DIODE STANDARD 600V 30A DIE
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 30A
Supplier Device Package: Die
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 30 A
Current - Reverse Leakage @ Vr: 27 µA @ 600 V
Produkt ist nicht verfügbar
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SIDC06D60E6X1SA4 SIDC06D60E6_ed1_3-12-01.pdf
Hersteller: Infineon Technologies
Description: DIODE STANDARD 600V 10A DIE
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 10A
Supplier Device Package: Die
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 10 A
Current - Reverse Leakage @ Vr: 27 µA @ 600 V
Produkt ist nicht verfügbar
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SIDC04D60F6X1SA2 SIDC04D60F6_ed2.1_9-3-10.pdf
Hersteller: Infineon Technologies
Description: DIODE STANDARD 600V 9A DIE
Packaging: Bulk
Current - Reverse Leakage @ Vr: 27 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 9 A
Voltage - DC Reverse (Vr) (Max): 600 V
Operating Temperature - Junction: -40°C ~ 175°C
Supplier Device Package: Die
Current - Average Rectified (Io): 9A
Technology: Standard
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: Die
Produkt ist nicht verfügbar
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SIDC14D60C8X1SA3 Infineon-SIDC14D60C8_L4024M-DS-v01_02-en.pdf?fileId=db3a30433c8a9179013c8ff64902577e
Hersteller: Infineon Technologies
Description: DIODE GEN PURP 600V 50A DIE
Current - Reverse Leakage @ Vr: 27 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.9 V @ 50 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Active
Operating Temperature - Junction: -40°C ~ 175°C
Supplier Device Package: Die
Current - Average Rectified (Io): 50A
Technology: Standard
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: Die
Packaging: Bulk
Produkt ist nicht verfügbar
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SIDC14D60F6X1SA3 SIDC14D60F6_ed2.1_9-3-10.pdf
Hersteller: Infineon Technologies
Description: DIODE STANDARD 600V 45A DIE
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 45A
Supplier Device Package: Die
Operating Temperature - Junction: -40°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 45 A
Current - Reverse Leakage @ Vr: 27 µA @ 600 V
Produkt ist nicht verfügbar
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SIDC26D60C8X1SA1 Infineon-SIDC26D60C8_L4028M-DS-v01_02-en.pdf?fileId=db3a30433c8a9179013c9039e2405834
SIDC26D60C8X1SA1
Hersteller: Infineon Technologies
Description: DIODE STANDARD 600V 100A DIE
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 100A
Supplier Device Package: Die
Operating Temperature - Junction: -40°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.9 V @ 100 A
Current - Reverse Leakage @ Vr: 27 µA @ 600 V
Current Coupled to Voltage - Forward (Vf) (Max) @ If: 100
Voltage Coupled to Current - Reverse Leakage @ Vr: 600
Produkt ist nicht verfügbar
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SIDC08D60C8X1SA1 Infineon-SIDC08D60C8_L4022M-DS-v01_02-en.pdf?fileId=db3a30433c8a9179013c8feff14c5770
Hersteller: Infineon Technologies
Description: DIODE GEN PURP 600V 30A DIE
Current - Reverse Leakage @ Vr: 27 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.95 V @ 30 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Active
Operating Temperature - Junction: -40°C ~ 175°C
Supplier Device Package: Die
Current - Average Rectified (Io): 30A
Technology: Standard
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: Die
Packaging: Bulk
Produkt ist nicht verfügbar
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SIDC04D60F6X1SA4 SIDC04D60F6_ed2.1_9-3-10.pdf
Hersteller: Infineon Technologies
Description: DIODE STANDARD 600V 9A DIE
Mounting Type: Surface Mount
Package / Case: Die
Packaging: Bulk
Current - Reverse Leakage @ Vr: 27 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 9 A
Voltage - DC Reverse (Vr) (Max): 600 V
Operating Temperature - Junction: -40°C ~ 175°C
Supplier Device Package: Die
Current - Average Rectified (Io): 9A
Technology: Standard
Speed: Standard Recovery >500ns, > 200mA (Io)
Produkt ist nicht verfügbar
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SIGC25T60NCX7SA1
Hersteller: Infineon Technologies
Description: IGBT 3 CHIP 600V WAFER
Produkt ist nicht verfügbar
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SIDC14D60F6X1SA1 SIDC14D60F6_ed2.1_9-3-10.pdf
Hersteller: Infineon Technologies
Description: DIODE STANDARD 600V 45A DIE
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 45A
Supplier Device Package: Die
Operating Temperature - Junction: -40°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 45 A
Current - Reverse Leakage @ Vr: 27 µA @ 600 V
Produkt ist nicht verfügbar
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SIGC81T60SNCX7SA1
SIGC81T60SNCX7SA1
Hersteller: Infineon Technologies
Description: IGBT 3 CHIP 600V WAFER
Current - Collector Pulsed (Icm): 300 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 100 A
Part Status: Obsolete
Test Condition: 400V, 100A, 3.3Ohm, 15V
Td (on/off) @ 25°C: 65ns/450ns
IGBT Type: NPT
Supplier Device Package: Die
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 100A
Input Type: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: Die
Packaging: Bulk
Produkt ist nicht verfügbar
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SIDC14D60C8X1SA2 Infineon-SIDC14D60C8_L4024M-DS-v01_02-en.pdf?fileId=db3a30433c8a9179013c8ff64902577e
SIDC14D60C8X1SA2
Hersteller: Infineon Technologies
Description: DIODE STANDARD 600V 50A DIE
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 50A
Supplier Device Package: Die
Operating Temperature - Junction: -40°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.9 V @ 50 A
Current - Reverse Leakage @ Vr: 27 µA @ 600 V
Produkt ist nicht verfügbar
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REFICL5102HVU150WTOBO1 Infineon-Referencedesign_REF-ICL-5102HV-U150W-ApplicationNotes-v01_00-EN.pdf?fileId=5546d4626eab8fbf016eac0dac4f0023
REFICL5102HVU150WTOBO1
Hersteller: Infineon Technologies
Description: EVAL BOARD FOR ICL5102HV
Contents: Board(s)
Part Status: Active
Outputs and Type: 1 Non-Isolated Output
Current - Output / Channel: 3A
Voltage - Input: 277 ~ 528 VAC
Voltage - Output: 17V ~ 48V
Packaging: Box
Supplied Contents: Board(s)
Utilized IC / Part: ICL5102HV
Produkt ist nicht verfügbar
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FS380R12A6T4BBPSA1 Infineon-FS380R12A6T4B-DataSheet-v03_01-EN.pdf?fileId=5546d4626da6c043016db9e750e268b1
FS380R12A6T4BBPSA1
Hersteller: Infineon Technologies
Description: IGBT MODULE 1200V 380A
Input Capacitance (Cies) @ Vce: 19 nF @ 25 V
Current - Collector Cutoff (Max): 1 mA
Current - Collector (Ic) (Max): 380 A
Part Status: Active
IGBT Type: Trench Field Stop
Supplier Device Package: AG-HYBRIDD-2
NTC Thermistor: Yes
Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 250A
Operating Temperature: -40°C ~ 150°C (TJ)
Configuration: Three Phase Inverter
Input: Standard
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Tray
Power - Max: 870 W
Voltage - Collector Emitter Breakdown (Max): 1200 V
auf Bestellung 6 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1+1217.07 EUR
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TLE92108232QXXUMA1 Infineon-TLE92108-232QX-DataSheet-v01_00-EN.pdf?fileId=5546d462749a7c2d01749b3138d607ed
TLE92108232QXXUMA1
Hersteller: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 48VFQFN
Supplier Device Package: PG-VQFN-48-31
High Side Voltage - Max (Bootstrap): 950 V
Input Type: Non-Inverting
Voltage - Supply: 6V ~ 28V
Mounting Type: Surface Mount
Package / Case: 48-VFQFN Exposed Pad
Packaging: Tape & Reel (TR)
Part Status: Active
Current - Peak Output (Source, Sink): 100mA, 100mA
Gate Type: IGBT, MOSFET (N-Channel)
Number of Drivers: 2
Driven Configuration: Half-Bridge
Channel Type: Synchronous
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
FS950R08A6P2BBPSA1 Infineon-FS950R08A6P2B-DataSheet-v03_00-EN.pdf?fileId=5546d4626da6c043016db9e7586868b4
FS950R08A6P2BBPSA1
Hersteller: Infineon Technologies
Description: IGBT MOD 750V 950A AG-HYBRIDD-2
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.35V @ 15V, 450A
NTC Thermistor: Yes
Supplier Device Package: AG-HYBRIDD-2
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 950 A
Voltage - Collector Emitter Breakdown (Max): 750 V
Power - Max: 870 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 80 nF @ 50 V
auf Bestellung 12 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1+604.59 EUR
12+577.92 EUR
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TLS715B0TSNPBOARDTOBO1
TLS715B0TSNPBOARDTOBO1
Hersteller: Infineon Technologies
Description: EVAL TLS715B0NAV50 LDO
Channels per IC: 1 - Single
Supplied Contents: Board(s)
Utilized IC / Part: TLS715B0NAV50
Board Type: Fully Populated
Regulator Type: Positive Fixed
Current - Output: 150mA
Voltage - Input: 4V ~ 40V
Voltage - Output: 5V
Packaging: Box
auf Bestellung 2 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1+54.18 EUR
Im Einkaufswagen  Stück im Wert von  UAH
TLE9210823QXAPPKITTOBO1 TLE92108-23QX_APPKIT_Web.pdf
TLE9210823QXAPPKITTOBO1
Hersteller: Infineon Technologies
Description: EVAL MOSFET DRVR TLE92018 MOTIX
Part Status: Active
Supplied Contents: Board(s)
Utilized IC / Part: TLE9210823
Type: Power Management
Function: Gate Driver
Packaging: Box
auf Bestellung 8 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1+105.14 EUR
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EVALM5E1B1245NSICTOBO1 Infineon-EVAL-M5-E1B1245N-SiC-ApplicationNotes-v01_00-EN.pdf?fileId=5546d4626cb27db2016d438785217e27
EVALM5E1B1245NSICTOBO1
Hersteller: Infineon Technologies
Description: EVAL COOLSIC MOSFET MOTOR DRIVER
Supplied Contents: Board(s)
Utilized IC / Part: 1EDI20H12AH
Type: Power Management
Function: Gate Driver
Packaging: Box
Contents: Board(s)
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TLE92108231QXXUMA1 Infineon-TLE92108-231QX-DataSheet-v01_00-EN.pdf?fileId=5546d462749a7c2d01749b323e140979
TLE92108231QXXUMA1
Hersteller: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 48VFQFN
Part Status: Active
Current - Peak Output (Source, Sink): 100mA, 100mA
Gate Type: IGBT, N-Channel MOSFET
Number of Drivers: 2
Driven Configuration: Half-Bridge
Channel Type: Synchronous
Supplier Device Package: PG-VQFN-48-31
High Side Voltage - Max (Bootstrap): 950 V
Input Type: Non-Inverting
Voltage - Supply: 6V ~ 28V
Mounting Type: Surface Mount
DigiKey Programmable: Not Verified
Package / Case: 48-VFQFN Exposed Pad
Packaging: Tape & Reel (TR)
auf Bestellung 7500 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2500+3.69 EUR
5000+3.62 EUR
Mindestbestellmenge: 2500 Stücke
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ICL5102HVXUMA1 Infineon-ICL5102HV-DataSheet-v01_02-EN.pdf?fileId=5546d4626c1f3dc3016c70f543a736d6
ICL5102HVXUMA1
Hersteller: Infineon Technologies
Description: IC LED DRIVER OFFL NO 19DSO
Packaging: Tape & Reel (TR)
Package / Case: 20-SOIC (0.295", 7.50mm Width), 19 Leads
Mounting Type: Surface Mount
Number of Outputs: 1
Frequency: 1.3MHz
Type: AC DC Offline Switcher
Operating Temperature: -40°C ~ 150°C (TJ)
Applications: Lighting
Internal Switch(s): No
Topology: Half-Bridge
Supplier Device Package: PG-DSO-19-1
Dimming: No
Voltage - Supply (Min): 8.5V
Voltage - Supply (Max): 18V
Part Status: Active
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1000+3.52 EUR
2000+3.44 EUR
3000+3.39 EUR
Mindestbestellmenge: 1000 Stücke
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TLD22522EPXUMA1 Infineon-TLD2252-2EP-DataSheet-v01_00-EN.pdf?fileId=5546d4626da6c043016dba1517ee6995
TLD22522EPXUMA1
Hersteller: Infineon Technologies
Description: IC LED DRVR CTRLR PWM 14TSDSO
Grade: Automotive
Voltage - Supply (Max): 18V
Voltage - Supply (Min): 8.5V
Dimming: PWM
Supplier Device Package: PG-TSDSO-14
Topology: Switched Capacitor (Charge Pump)
Internal Switch(s): No
Current - Output / Channel: 120mA
Applications: Lighting
Operating Temperature: -40°C ~ 150°C (TJ)
Type: DC DC Controller
Number of Outputs: 2
Mounting Type: Surface Mount
Package / Case: 14-TSSOP (0.154", 3.90mm Width) Exposed Pad
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
TLD22522EPXUMA1 Infineon-TLD2252-2EP-DataSheet-v01_00-EN.pdf?fileId=5546d4626da6c043016dba1517ee6995
TLD22522EPXUMA1
Hersteller: Infineon Technologies
Description: IC LED DRVR CTRLR PWM 14TSDSO
Package / Case: 14-TSSOP (0.154", 3.90mm Width) Exposed Pad
Packaging: Cut Tape (CT)
Grade: Automotive
Voltage - Supply (Max): 18V
Voltage - Supply (Min): 8.5V
Dimming: PWM
Supplier Device Package: PG-TSDSO-14
Topology: Switched Capacitor (Charge Pump)
Internal Switch(s): No
Current - Output / Channel: 120mA
Applications: Lighting
Operating Temperature: -40°C ~ 150°C (TJ)
Type: DC DC Controller
Number of Outputs: 2
Mounting Type: Surface Mount
auf Bestellung 2950 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
8+2.89 EUR
10+2.11 EUR
25+1.9 EUR
100+1.69 EUR
250+1.59 EUR
500+1.52 EUR
1000+1.48 EUR
Mindestbestellmenge: 8 Stücke
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ICL5102HVXUMA1 Infineon-ICL5102HV-DataSheet-v01_02-EN.pdf?fileId=5546d4626c1f3dc3016c70f543a736d6
ICL5102HVXUMA1
Hersteller: Infineon Technologies
Description: IC LED DRIVER OFFL NO 19DSO
Packaging: Cut Tape (CT)
Package / Case: 20-SOIC (0.295", 7.50mm Width), 19 Leads
Mounting Type: Surface Mount
Number of Outputs: 1
Frequency: 1.3MHz
Type: AC DC Offline Switcher
Operating Temperature: -40°C ~ 150°C (TJ)
Applications: Lighting
Internal Switch(s): No
Topology: Half-Bridge
Supplier Device Package: PG-DSO-19-1
Dimming: No
Voltage - Supply (Min): 8.5V
Voltage - Supply (Max): 18V
Part Status: Active
auf Bestellung 3930 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
4+6.41 EUR
10+4.81 EUR
25+4.4 EUR
100+3.96 EUR
250+3.76 EUR
500+3.63 EUR
Mindestbestellmenge: 4 Stücke
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IRAUDAMP23 Infineon-IRAUDAMP23-DataSheet-v01_00-EN.pdf?fileId=5546d462677d0f4601679746020259b4
IRAUDAMP23
Hersteller: Infineon Technologies
Description: EVAL BOARD FOR IRS2452AM
Amplifier Type: Class D
Output Type: 2-Channel (Stereo)
Packaging: Box
Contents: Board(s)
Part Status: Active
Supplied Contents: Board(s)
Utilized IC / Part: IRS2452AM
Board Type: Fully Populated
Max Output Power x Channels @ Load: 600W x 2 @ 20Ohm
Voltage - Supply: ±80V ~ 160V
auf Bestellung 3 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1+533.82 EUR
Im Einkaufswagen  Stück im Wert von  UAH
TLE5014SP16E0002XUMA1 Infineon-TLE5014SP16%20E0002-DataSheet-v01_01-EN.pdf?fileId=5546d4626eab8fbf016ed1115f552acc
TLE5014SP16E0002XUMA1
Hersteller: Infineon Technologies
Description: GMR-BASED ANGLE SENSOR
Packaging: Tape & Reel (TR)
Package / Case: 16-TSSOP (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Output: Wheatstone Bridge
Operating Temperature: -40°C ~ 125°C (TA)
Termination Style: Gull Wing
Voltage - Supply: 3V ~ 5.5V
Actuator Type: External Magnet, Not Included
Technology: Magnetoresistive
For Measuring: Angle
Supplier Device Package: PG-TDSO-16-1
Rotation Angle - Electrical, Mechanical: 0° ~ 360°, Continuous
Output Signal: Cosine, Sine
Part Status: Active
Grade: Automotive
Qualification: AEC-Q100
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
TLE5014SP16E0001XUMA1 Infineon-TLE5014SP16%20E0001-DataSheet-v01_01-EN.pdf?fileId=5546d4626eab8fbf016ed1116a022ad0
TLE5014SP16E0001XUMA1
Hersteller: Infineon Technologies
Description: GMR-BASED ANGLE SENSOR
Packaging: Tape & Reel (TR)
Package / Case: 16-TSSOP (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Output: Wheatstone Bridge
Operating Temperature: -40°C ~ 125°C (TA)
Termination Style: Gull Wing
Voltage - Supply: 3V ~ 5.5V
Actuator Type: External Magnet, Not Included
Technology: Magnetoresistive
For Measuring: Angle
Supplier Device Package: PG-TDSO-16-1
Rotation Angle - Electrical, Mechanical: 0° ~ 360°, Continuous
Output Signal: Cosine, Sine
Part Status: Active
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
TLE5014SP16E0001XUMA1 Infineon-TLE5014SP16%20E0001-DataSheet-v01_01-EN.pdf?fileId=5546d4626eab8fbf016ed1116a022ad0
TLE5014SP16E0001XUMA1
Hersteller: Infineon Technologies
Description: GMR-BASED ANGLE SENSOR
Packaging: Cut Tape (CT)
Package / Case: 16-TSSOP (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Output: Wheatstone Bridge
Operating Temperature: -40°C ~ 125°C (TA)
Termination Style: Gull Wing
Voltage - Supply: 3V ~ 5.5V
Actuator Type: External Magnet, Not Included
Technology: Magnetoresistive
For Measuring: Angle
Supplier Device Package: PG-TDSO-16-1
Rotation Angle - Electrical, Mechanical: 0° ~ 360°, Continuous
Output Signal: Cosine, Sine
Part Status: Active
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TLE5014SP16E0002XUMA1 Infineon-TLE5014SP16%20E0002-DataSheet-v01_01-EN.pdf?fileId=5546d4626eab8fbf016ed1115f552acc
TLE5014SP16E0002XUMA1
Hersteller: Infineon Technologies
Description: GMR-BASED ANGLE SENSOR
Packaging: Cut Tape (CT)
Package / Case: 16-TSSOP (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Output: Wheatstone Bridge
Operating Temperature: -40°C ~ 125°C (TA)
Termination Style: Gull Wing
Voltage - Supply: 3V ~ 5.5V
Actuator Type: External Magnet, Not Included
Technology: Magnetoresistive
For Measuring: Angle
Supplier Device Package: PG-TDSO-16-1
Rotation Angle - Electrical, Mechanical: 0° ~ 360°, Continuous
Output Signal: Cosine, Sine
Part Status: Active
Grade: Automotive
Qualification: AEC-Q100
auf Bestellung 59 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
4+6.78 EUR
5+6.07 EUR
10+5.81 EUR
25+5.49 EUR
50+5.27 EUR
Mindestbestellmenge: 4 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
BSC0403NSATMA1 Infineon-BSC0403NS-DataSheet-v02_01-EN.pdf?fileId=5546d462700c0ae6017015dda00a2215
BSC0403NSATMA1
Hersteller: Infineon Technologies
Description: 150V, N-CH MOSFET, LOGIC LEVEL,
Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 75 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V
Drain to Source Voltage (Vdss): 150 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Supplier Device Package: PG-TDSON-8-7
Vgs(th) (Max) @ Id: 4.6V @ 91µA
Power Dissipation (Max): 125W (Tc)
Rds On (Max) @ Id, Vgs: 11mOhm @ 35A, 10
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
XDPS21071XUMA1 Infineon-XDPS21071-DataSheet-v01_00-EN.pdf?fileId=5546d4626e41e490016e632b3d382b14
XDPS21071XUMA1
Hersteller: Infineon Technologies
Description: DIGITAL FFR CONTROLLER, DSO12
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.154", 3.90mm Width), 12 Leads
Output Type: Transistor Driver
Mounting Type: Surface Mount
Function: Step-Up/Step-Down
Operating Temperature: -25°C ~ 125°C (TJ)
Output Configuration: Positive
Frequency - Switching: 24.9kHz ~ 139.4kHz
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 3.3V
Supplier Device Package: PG-DSO-12-20
Synchronous Rectifier: No
Control Features: Current Limit, Soft Start
Output Phases: 1
Clock Sync: No
Number of Outputs: 1
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
REF_XDPS21071_45W1 Infineon-referencedesign_REF_XDPS21071_45W1-ApplicationNotes-v01_00-EN.pdf?fileId=5546d4626f229553016f9f594a4d19ee&redirId=121668
REF_XDPS21071_45W1
Hersteller: Infineon Technologies
Description: 45W USB-PD 3.0 TYPE C CHARGER
auf Bestellung 1 Stücke:
Lieferzeit 10-14 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
IPAN70R360P7SAUMA1 Infineon-IPAN70R360P7S-DS-v02_01-EN.pdf?fileId=5546d4625acbae4c015ad1977e2820c3
Hersteller: Infineon Technologies
Description: 700V, N-CH MOSFET, TO220 FULLPAK
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IMZA65R048M1HXKSA1 Infineon-IMZA65R048M1H-DataSheet-v02_00-EN.pdf?fileId=5546d4626f229553016f85d9ac090535
IMZA65R048M1HXKSA1
Hersteller: Infineon Technologies
Description: MOSFET 650V NCH SIC TRENCH
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 39A (Tc)
Rds On (Max) @ Id, Vgs: 64mOhm @ 20.1A, 18V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 5.7V @ 6mA
Supplier Device Package: PG-TO247-4-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +23V, -5V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1118 pF @ 400 V
auf Bestellung 34 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2+20.19 EUR
30+11.97 EUR
Mindestbestellmenge: 2 Stücke
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IPAN60R360PFD7SXKSA1 Infineon-IPAN60R360PFD7S-DataSheet-v02_01-EN.pdf?fileId=5546d4626df6ee62016e225ddfd96741
IPAN60R360PFD7SXKSA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 650V 10A TO220
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 360mOhm @ 2.9A, 10V
Power Dissipation (Max): 23W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 140µA
Supplier Device Package: PG-TO220-FP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 12.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 534 pF @ 400 V
auf Bestellung 506 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
7+3.19 EUR
50+1.52 EUR
100+1.36 EUR
500+1.07 EUR
Mindestbestellmenge: 7 Stücke
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IMW65R048M1HXKSA1 Infineon-IMW65R048M1H-DataSheet-v02_00-EN.pdf?fileId=5546d4626f229553016f85b4a66c0466
IMW65R048M1HXKSA1
Hersteller: Infineon Technologies
Description: MOSFET 650V NCH SIC TRENCH
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 39A (Tc)
Rds On (Max) @ Id, Vgs: 64mOhm @ 20.1A, 18V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 5.7V @ 6mA
Supplier Device Package: PG-TO247-3-41
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +23V, -5V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1118 pF @ 400 V
auf Bestellung 220 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1+22.54 EUR
30+13.34 EUR
120+11.33 EUR
Im Einkaufswagen  Stück im Wert von  UAH
IPS60R600PFD7SAKMA1 Infineon-IPS60R600PFD7S-DataSheet-v02_00-EN.pdf?fileId=5546d4626df6ee62016e2294e27e6797
IPS60R600PFD7SAKMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 650V 6A TO251-3
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 1.7A, 10V
Power Dissipation (Max): 31W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 80µA
Supplier Device Package: PG-TO251-3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 8.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 344 pF @ 400 V
Produkt ist nicht verfügbar
Mindestbestellmenge: 1500 Stücke
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IPD60R280PFD7SAUMA1 Infineon-IPD60R280PFD7S-DataSheet-v02_00-EN.pdf?fileId=5546d4626df6ee62016e22702a14674d
IPD60R280PFD7SAUMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 600V 12A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 3.6A, 10V
Power Dissipation (Max): 51W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 180µA
Supplier Device Package: PG-TO252-3-344
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 15.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 656 pF @ 400 V
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
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IMW65R107M1HXKSA1 Infineon-IMW65R107M1H-DataSheet-v02_00-EN.pdf?fileId=5546d4626f229553016f85d01cd50485
IMW65R107M1HXKSA1
Hersteller: Infineon Technologies
Description: MOSFET 650V NCH SIC TRENCH
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 142mOhm @ 8.9A, 18V
Power Dissipation (Max): 75W (Tc)
Vgs(th) (Max) @ Id: 5.7V @ 3mA
Supplier Device Package: PG-TO247-3-41
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +23V, -5V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 496 pF @ 400 V
auf Bestellung 106 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2+11.21 EUR
30+6.4 EUR
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IPS60R1K0PFD7SAKMA1 Infineon-IPS60R1K0PFD7S-DataSheet-v02_00-EN.pdf?fileId=5546d4626df6ee62016e2282a4c8675c
IPS60R1K0PFD7SAKMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 650V 4.7A TO251-3
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.7A (Tc)
Rds On (Max) @ Id, Vgs: 1Ohm @ 1A, 10V
Power Dissipation (Max): 26W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 50µA
Supplier Device Package: PG-TO251-3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 230 pF @ 400 V
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