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IDWD15G120C5XKSA1 IDWD15G120C5XKSA1 Infineon Technologies Infineon-IDWD15G120C5-DS-v02_00-EN.pdf?fileId=5546d462689a790c016933d54d2b5489 Description: DIODE SIC 1.2KV 49A PGTO2472
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: Zero Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 1050pF @ 1V, 1MHz
Current - Average Rectified (Io): 49A
Supplier Device Package: PG-TO247-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.65 V @ 15 A
Current - Reverse Leakage @ Vr: 124 µA @ 1200 V
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2+10.88 EUR
30+6.23 EUR
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IKP28N65ES5XKSA1 IKP28N65ES5XKSA1 Infineon Technologies Infineon-IKP28N65ES5-DS-v02_01-EN.pdf?fileId=5546d462696dbf1201697b6e31284429 Description: IGBT TRENCH FS 650V 38A TO220-3
Power - Max: 130 W
Current - Collector Pulsed (Icm): 90 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector (Ic) (Max): 38 A
Part Status: Active
Gate Charge: 50 nC
Test Condition: 400V, 28A, 34Ohm, 15V
Switching Energy: 530µJ (on), 400µJ (off)
Td (on/off) @ 25°C: 27ns/184ns
IGBT Type: Trench Field Stop
Supplier Device Package: PG-TO220-3
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 28A
Reverse Recovery Time (trr): 73 ns
Input Type: Standard
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Produkt ist nicht verfügbar
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IM393L6FXKLA1 IM393L6FXKLA1 Infineon Technologies Infineon-IM393-L6F-DS-v02_00-EN.pdf?fileId=5546d462696dbf1201699a946a8b78d2 Description: POWER MODULE 600V 15A MDIP22
Voltage: 600 V
Current: 15 A
Part Status: Obsolete
Voltage - Isolation: 2000Vrms
Configuration: 3 Phase Inverter
Type: IGBT
Mounting Type: Through Hole
Package / Case: 26-PowerSIP Module, 22 Leads, Formed Leads
Packaging: Tube
Produkt ist nicht verfügbar
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IM393M6FXKLA1 IM393M6FXKLA1 Infineon Technologies Infineon-IM393-M6F-DS-v02_00-EN.pdf?fileId=5546d462696dbf1201699a947c0278da Description: POWER MODULE 600V 10A 26PWRSIP
Voltage: 600 V
Current: 10 A
Part Status: Obsolete
Voltage - Isolation: 2000Vrms
Configuration: 3 Phase Inverter
Type: IGBT
Mounting Type: Through Hole
Package / Case: 26-PowerSIP Module, 22 Leads, Formed Leads
Packaging: Tube
Produkt ist nicht verfügbar
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IM393S6FXKLA1 IM393S6FXKLA1 Infineon Technologies Infineon-IM393-S6F-DS-v02_00-EN.pdf?fileId=5546d462696dbf1201699a9d808378dd Description: POWER MODULE 600V 6A MDIP22
Voltage: 600 V
Current: 6 A
Part Status: Obsolete
Voltage - Isolation: 2000Vrms
Configuration: 3 Phase Inverter
Type: IGBT
Mounting Type: Through Hole
Package / Case: 26-PowerSIP Module, 22 Leads, Formed Leads
Packaging: Tube
Produkt ist nicht verfügbar
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IM393L6EXKLA1 IM393L6EXKLA1 Infineon Technologies Infineon-IM393-L6E-DS-v02_00-EN.pdf?fileId=5546d462696dbf1201699a8b350f78c7 Description: POWER MODULE 600V 15A MDIP30
Current: 15 A
Part Status: Obsolete
Voltage - Isolation: 2000Vrms
Configuration: 3 Phase Inverter
Type: IGBT
Mounting Type: Through Hole
Package / Case: 35-PowerDIP Module (0.866", 22.00mm), 30 Leads
Packaging: Tube
Voltage: 600 V
Produkt ist nicht verfügbar
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IM393L6E3XKLA1 Infineon Technologies Infineon-IM393-L6E-DS-v02_00-EN.pdf?fileId=5546d462696dbf1201699a8b350f78c7 Description: POWER MODULE 600V 15A MDIP30
Voltage: 600 V
Current: 15 A
Part Status: Obsolete
Voltage - Isolation: 2000Vrms
Configuration: 3 Phase Inverter
Type: IGBT
Mounting Type: Through Hole
Package / Case: 35-PowerDIP Module (0.866", 22.00mm), 30 Leads
Packaging: Tube
Produkt ist nicht verfügbar
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IM393M6EXKLA1 IM393M6EXKLA1 Infineon Technologies Infineon-IM393-M6E-DS-v02_00-EN.pdf?fileId=5546d462696dbf1201699a94732278d5 Description: POWER MODULE 600V 10A MDIP30
Voltage: 600 V
Current: 10 A
Part Status: Obsolete
Voltage - Isolation: 2000Vrms
Configuration: 3 Phase Inverter
Type: IGBT
Mounting Type: Through Hole
Package / Case: 35-PowerDIP Module (0.866", 22.00mm), 30 Leads
Packaging: Tube
Produkt ist nicht verfügbar
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IM393M6E2XKLA1 IM393M6E2XKLA1 Infineon Technologies Infineon-IM393-M6E-DS-v02_00-EN.pdf?fileId=5546d462696dbf1201699a94732278d5 Description: POWER MODULE 600V 10A MDIP30
Voltage: 600 V
Current: 10 A
Part Status: Obsolete
Voltage - Isolation: 2000Vrms
Configuration: 3 Phase Inverter
Type: IGBT
Mounting Type: Through Hole
Package / Case: 35-PowerDIP Module (0.866", 22.00mm), 30 Leads
Packaging: Tube
Produkt ist nicht verfügbar
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IM393M6E3XKLA1 IM393M6E3XKLA1 Infineon Technologies Infineon-IM393-M6E-DS-v02_00-EN.pdf?fileId=5546d462696dbf1201699a94732278d5 Description: POWER MODULE 600V 10A MDIP30
Voltage: 600 V
Current: 10 A
Part Status: Obsolete
Voltage - Isolation: 2000Vrms
Configuration: 3 Phase Inverter
Type: IGBT
Mounting Type: Through Hole
Package / Case: 35-PowerDIP Module (0.866", 22.00mm), 30 Leads
Packaging: Tube
Produkt ist nicht verfügbar
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IM393S6E2XKLA1 IM393S6E2XKLA1 Infineon Technologies Infineon-IM393-S6E-DS-v02_00-EN.pdf?fileId=5546d462696dbf1201699a9d912478e4 Description: POWER MODULE 600V 6A MDIP30
Voltage: 600 V
Current: 6 A
Part Status: Obsolete
Voltage - Isolation: 2000Vrms
Configuration: 3 Phase Inverter
Type: IGBT
Mounting Type: Through Hole
Package / Case: 35-PowerDIP Module (0.866", 22.00mm), 30 Leads
Packaging: Tube
Produkt ist nicht verfügbar
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IM393X6EXKLA1 IM393X6EXKLA1 Infineon Technologies Infineon-IM393-X6E-DS-v02_00-EN.pdf?fileId=5546d462696dbf1201699a9d9a3578e9 Description: POWER MODULE 600V 20A MDIP30
Voltage: 600 V
Current: 20 A
Part Status: Obsolete
Voltage - Isolation: 2000Vrms
Configuration: 3 Phase Inverter
Type: IGBT
Mounting Type: Through Hole
Package / Case: 35-PowerDIP Module (0.866", 22.00mm), 30 Leads
Packaging: Tube
Produkt ist nicht verfügbar
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EVALM1IM231TOBO1 Infineon Technologies Infineon-IM231-L6S1B_T2B-DS-v02_00-EN.pdf?fileId=5546d462689a790c0169067334d10ef3 Description: EVAL IM231 CIPOS MICRO IPM
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EVALSHNBV01DPS422TOBO1 EVALSHNBV01DPS422TOBO1 Infineon Technologies Infineon-Quick%20Setup%20Guide%20for%20Barometric%20Pressure%20Sensor%20Hub%20Nano-GS-v01_01-EN.pdf?fileId=5546d46269bda8df0169bf3dccc11a5c Description: EVAL DPS422 BAROMETRIC HUB
Contents: Board(s)
Embedded: Yes, MCU, 32-Bit
Supplied Contents: Board(s)
Utilized IC / Part: DPS422, XMC1100
Sensor Type: Pressure
Interface: RF
Packaging: Bulk
Produkt ist nicht verfügbar
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S2GOPRESSUREDPS422TOBO1 S2GOPRESSUREDPS422TOBO1 Infineon Technologies Description: EVAL DPS422 BAROMETRIC
Utilized IC / Part: DPS422
Contents: Board(s)
Type: Sensor
Function: Barometer
Packaging: Bulk
Platform: Shield2Go
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TLF50211ELXUMA2 TLF50211ELXUMA2 Infineon Technologies Infineon-TLF50211EL-DS-v01_10-EN.pdf?fileId=5546d46258fc0bc1015969d2af9641e9 Description: IC REG BUCK 5V 500MA SSOP-14-3
Packaging: Cut Tape (CT)
Package / Case: 14-LSSOP (0.154", 3.90mm Width) Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 500mA
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Frequency - Switching: 2.25MHz
Voltage - Input (Max): 45V
Topology: Buck
Supplier Device Package: PG-SSOP-14-3
Synchronous Rectifier: No
Voltage - Input (Min): 4.75V
Voltage - Output (Min/Fixed): 5V
Part Status: Active
Grade: Automotive
Qualification: AEC-Q100
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100+2.39 EUR
250+2.26 EUR
500+2.21 EUR
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AUIR3241SDEMOBOARDTOBO1 AUIR3241SDEMOBOARDTOBO1 Infineon Technologies Infineon-AUIR3241S%20DEMOBOARD-DS-v01_00-EN.pdf?fileId=5546d46265f064ff016667e5d4133c3f Description: EVAL BOARD FOR AUIR3241S
Packaging: Bulk
Function: Gate Driver
Type: Power Management
Contents: Board(s)
Utilized IC / Part: AUIR3241S
Supplied Contents: Board(s)
Part Status: Obsolete
Produkt ist nicht verfügbar
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28576411 B Infineon Technologies Description: IC FLASH 24FBGA
Memory Format: FLASH
Technology: FLASH - NOR
DigiKey Programmable: Not Verified
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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FM24W256-EGTR Infineon Technologies FM24W256_RevL_12-17-18.pdf Description: IC FRAM 256KBIT 8SOIC
DigiKey Programmable: Not Verified
Part Status: Obsolete
Packaging: Tape & Reel (TR)
Memory Format: FRAM
Memory Size: 256Kbit
Produkt ist nicht verfügbar
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FM24W256-EG Infineon Technologies FM24W256_RevL_12-17-18.pdf Description: IC FRAM 256KBIT 8SOIC
DigiKey Programmable: Not Verified
Part Status: Obsolete
Packaging: Tray
Memory Format: FRAM
Memory Size: 256Kbit
Produkt ist nicht verfügbar
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MB88386PMC-GS-TLE1 Infineon Technologies Description: IC AUTO MCU 80LQFP
Part Status: Obsolete
Packaging: Tray
Produkt ist nicht verfügbar
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IKB20N60TATMA1 IKB20N60TATMA1 Infineon Technologies IKB20N60T+Rev2_4G.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a304412b407950112b42883273e12 Description: IGBT TRENCH FS 600V 40A TO263-3
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 41 ns
Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 20A
Supplier Device Package: PG-TO263-3-2
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 18ns/199ns
Switching Energy: 770µJ
Test Condition: 400V, 20A, 12Ohm, 15V
Gate Charge: 120 nC
Part Status: Active
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 60 A
Power - Max: 166 W
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10+4.09 EUR
100+2.84 EUR
500+2.31 EUR
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IRS2093MTRPBF IRS2093MTRPBF Infineon Technologies irs2093mpbf.pdf?fileId=5546d462533600a401535675fb892793 Description: IC AMP CLASS D QUAD 48MLPQ
Part Status: Active
Supplier Device Package: PG-VQFN-48
Voltage - Supply: 10V ~ 15V
Operating Temperature: -40°C ~ 125°C (TA)
Type: Class D
Package / Case: 48-VFQFN Exposed Pad
Features: Depop, Short-Circuit Protection, Shutdown
Packaging: Cut Tape (CT)
Mounting Type: Surface Mount
Output Type: 4-Channel (Quad)
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10+8.24 EUR
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100+6.95 EUR
250+6.63 EUR
500+6.44 EUR
1000+6.28 EUR
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EVAL12W3PHSMP7TOBO1 EVAL12W3PHSMP7TOBO1 Infineon Technologies Infineon-ApplicationNote_EvaluationBoard_EVAL_12W_3PH_SM_P7-AN-v01_00-EN.pdf?fileId=5546d46269e1c019016a7f8ee5ed40c1 Description: EVAL BOARD ICE5QSAG IPD95R1K2P7
Packaging: Bulk
Voltage - Output: 12V
Voltage - Input: 185 ~ 460 VAC
Current - Output: 1A
Regulator Topology: Flyback
Board Type: Fully Populated
Utilized IC / Part: ICE5QSAG, IPD95R1K2P7
Supplied Contents: Board(s)
Main Purpose: AC/DC, Primary Side
Outputs and Type: 1 Isolated Output
Part Status: Active
Power - Output: 12W
Contents: Board(s)
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TPM7012XENONBOARDTOBO1 TPM7012XENONBOARDTOBO1 Infineon Technologies Infineon-OPTIGA_TPM-PB-v10_15-EN.pdf?fileId=5546d46145da30e80145efa2f0b96a8e Description: EVAL TPM SLB9670 XENON
Packaging: Bulk
Function: Trusted Platform Module (TPM)
Type: Interface
Contents: Board(s)
Part Status: Obsolete
Produkt ist nicht verfügbar
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DPS368XTSA1 DPS368XTSA1 Infineon Technologies Infineon-DPS368-DS-v01_00-EN.pdf?fileId=5546d46269e1c019016a0c45105d4b40 Description: SENSOR 17.4PSIG 24BIT 8VLGA
Packaging: Tape & Reel (TR)
Features: Temperature Compensated
Package / Case: 8-VFLGA
Output Type: I2C, SPI
Mounting Type: Surface Mount
Output: 24 b
Operating Pressure: 4.35PSI ~ 17.4PSI (30kPa ~ 120kPa)
Pressure Type: Vented Gauge
Accuracy: ±0.015PSI (±0.1kPa)
Operating Temperature: -40°C ~ 85°C
Termination Style: SMD (SMT) Tab
Voltage - Supply: 1.7V ~ 3.6V
Applications: Board Mount
Supplier Device Package: PG-VLGA-8-1
Port Style: No Port
Maximum Pressure: 145PSI (999.74kPa)
Part Status: Active
Produkt ist nicht verfügbar
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EVALSHNBV01DPS368TOBO1 EVALSHNBV01DPS368TOBO1 Infineon Technologies Infineon-Quick%20Setup%20Guide%20for%20Barometric%20Pressure%20Sensor%20Hub%20Nano-GS-v01_01-EN.pdf?fileId=5546d46269bda8df0169bf3dccc11a5c Description: SENSOR HUB NANO DPS368
Packaging: Bulk
Interface: I2C, Serial, SPI
Voltage - Supply: 1.7V ~ 3.6V
Sensor Type: Pressure
Utilized IC / Part: DPS368
Supplied Contents: Board(s)
Sensing Range: 300 ~ 1200 hPa
Part Status: Active
Contents: Board(s)
Produkt ist nicht verfügbar
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IPB12CN10NGATMA2 Infineon Technologies Description: MOSFET N-CH 100V 67A TO263-3
Part Status: Obsolete
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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IRF3717TRPBF-1 IRF3717TRPBF-1 Infineon Technologies IRF3717PbF-1_7-25-14.pdf Description: MOSFET N-CH 20V 20A 8-SOIC
Rds On (Max) @ Id, Vgs: 4.4mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 20A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 2890 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 2.45V @ 250µA
Power Dissipation (Max): 2.5W (Ta)
Produkt ist nicht verfügbar
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IRF7331TRPBF-1 IRF7331TRPBF-1 Infineon Technologies IRF7331TRPbF-1_10-16-14.pdf Description: MOSFET 2N-CH 20V 7A 8SOIC
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 4.5V
Rds On (Max) @ Id, Vgs: 30mOhm @ 7A, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 1340pF @ 16V
Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
Drain to Source Voltage (Vdss): 20V
Power - Max: 2W (Ta)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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IRF7904TRPBF-1 IRF7904TRPBF-1 Infineon Technologies IRF7904PbF-1_5-19-14.pdf Description: MOSFET 2N-CH 30V 7.6A/11A 8SO
Part Status: Obsolete
Supplier Device Package: 8-SO
Vgs(th) (Max) @ Id: 2.25V @ 25µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 11nC @ 4.5V
Rds On (Max) @ Id, Vgs: 16.2mOhm @ 7.6A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 910pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 7.6A, 11A
Drain to Source Voltage (Vdss): 30V
Power - Max: 1.4W, 2W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Half Bridge)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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IRFC048N Infineon Technologies Description: MOSFET N-CH
Part Status: Obsolete
Packaging: Bulk
Produkt ist nicht verfügbar
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IRFC048NB Infineon Technologies Description: MOSFET N-CH
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BTS500101TADATMA2 BTS500101TADATMA2 Infineon Technologies BTS50010-1TA_rev1.2_12-5-17.pdf Description: IC PWR HIC-PROFET N-CH 1:1 TO263
Packaging: Cut Tape (CT)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab), TO-263CB
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 1.6mOhm
Input Type: Non-Inverting
Voltage - Load: 8V ~ 18V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 48A
Ratio - Input:Output: 1:1
Supplier Device Package: P/PG-TO-263-7-10
Fault Protection: Over Temperature, Over Voltage, Reverse Battery, Short Circuit
Part Status: Active
Grade: Automotive
Qualification: AEC-Q100
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2+9.91 EUR
10+7.62 EUR
25+7.04 EUR
100+6.41 EUR
250+6.19 EUR
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S25FL132K0XMFN013 S25FL132K0XMFN013 Infineon Technologies S25FL116K,S25FL132K,S25FL164K.pdf Description: IC FLASH 32MBIT SPI/QUAD 8SOIC
DigiKey Programmable: Not Verified
Memory Organization: 4M x 8
Memory Interface: SPI - Quad I/O
Write Cycle Time - Word, Page: 3ms
Part Status: Obsolete
Supplier Device Package: 8-SOIC
Memory Format: FLASH
Clock Frequency: 108 MHz
Technology: FLASH - NOR
Voltage - Supply: 2.7V ~ 3.6V
Operating Temperature: -40°C ~ 125°C (TA)
Memory Type: Non-Volatile
Memory Size: 32Mbit
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.209", 5.30mm Width)
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
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S25FL032P0XBHI033 S25FL032P0XBHI033 Infineon Technologies S25FL032P.pdf Description: IC FLASH 32MBIT SPI/QUAD 24BGA
Clock Frequency: 104 MHz
Technology: FLASH - NOR
Voltage - Supply: 2.7V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Memory Type: Non-Volatile
Memory Size: 32Mbit
Mounting Type: Surface Mount
Package / Case: 24-TBGA
Packaging: Cut Tape (CT)
Memory Organization: 4M x 8
Memory Interface: SPI - Quad I/O
Write Cycle Time - Word, Page: 5µs, 3ms
Part Status: Obsolete
Supplier Device Package: 24-BGA (6x8)
Memory Format: FLASH
DigiKey Programmable: Not Verified
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9+2.16 EUR
10+1.92 EUR
25+1.83 EUR
50+1.76 EUR
100+1.7 EUR
250+1.62 EUR
500+1.57 EUR
1000+1.51 EUR
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IPB90R340C3ATMA2 IPB90R340C3ATMA2 Infineon Technologies Infineon-IPB90R340C3-DS-v02_00-en.pdf?fileId=db3a304336c52a950136c5c59ef500ad Description: MOSFET N-CH 900V 15A TO263-3
Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 94 nC @ 10 V
Drain to Source Voltage (Vdss): 900 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: PG-TO263-3-2
Vgs(th) (Max) @ Id: 3.5V @ 1mA
Power Dissipation (Max): 208W (Tc)
Rds On (Max) @ Id, Vgs: 340mOhm @ 9.2A, 10V
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
auf Bestellung 1000 Stücke:
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1000+4.86 EUR
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IPB90R340C3ATMA2 IPB90R340C3ATMA2 Infineon Technologies Infineon-IPB90R340C3-DS-v02_00-en.pdf?fileId=db3a304336c52a950136c5c59ef500ad Description: MOSFET N-CH 900V 15A TO263-3
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 340mOhm @ 9.2A, 10V
Power Dissipation (Max): 208W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 1mA
Supplier Device Package: PG-TO263-3-2
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 94 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 100 V
auf Bestellung 1824 Stücke:
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500+5.68 EUR
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IPI90R1K2C3XKSA2 IPI90R1K2C3XKSA2 Infineon Technologies Infineon-IPI90R1K2C3-DS-v01_00-en.pdf?fileId=db3a30432313ff5e0123a85db6ae5bb3 Description: MOSFET N-CH 900V 5.1A TO262-3
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.1A (Tc)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 2.8A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 310µA
Supplier Device Package: PG-TO262-3-1
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 710 pF @ 100 V
Produkt ist nicht verfügbar
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BFS 17P E8211 BFS 17P E8211 Infineon Technologies Description: RF TRANS NPN SOT23-3
Part Status: Active
Supplier Device Package: PG-SOT23
Noise Figure (dB Typ @ f): 3.5dB @ 800MHz
Frequency - Transition: 1.4GHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 2mA, 1V
Voltage - Collector Emitter Breakdown (Max): 15V
Current - Collector (Ic) (Max): 25mA
Power - Max: 280mW
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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BFS17PE6752HTSA1 Infineon Technologies Description: RF TRANS NPN 15V 1.4GHZ PG-SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Power - Max: 280mW
Current - Collector (Ic) (Max): 25mA
Voltage - Collector Emitter Breakdown (Max): 15V
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 2mA, 1V
Frequency - Transition: 1.4GHz
Noise Figure (dB Typ @ f): 3.5dB @ 800MHz
Supplier Device Package: PG-SOT23
Part Status: Last Time Buy
Produkt ist nicht verfügbar
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BFS17WH6393XTSA1 BFS17WH6393XTSA1 Infineon Technologies Description: RF TRANS NPN SOT323-3
Part Status: Active
Noise Figure (dB Typ @ f): 3.5dB @ 800MHz
Frequency - Transition: 1.4GHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 2mA, 1V
Voltage - Collector Emitter Breakdown (Max): 15V
Current - Collector (Ic) (Max): 25mA
Power - Max: 280mW
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Packaging: Tape & Reel (TR)
Supplier Device Package: PG-SOT323
Produkt ist nicht verfügbar
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FD450R12KE4PHOSA1 FD450R12KE4PHOSA1 Infineon Technologies Infineon-FD450R12KE4P-DataSheet-v02_00-EN.pdf?fileId=5546d4626b2d8e69016b54a4ce416fd0 Description: IGBT MODULE 1200V 450A AG62MM-1
auf Bestellung 56 Stücke:
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REFAUDIOAMA12040TOBO1 REFAUDIOAMA12040TOBO1 Infineon Technologies Infineon-UserManual_ClassD_audio_MA120xxx_reference_boards-ApplicationNotes-v01_00-EN.pdf?fileId=5546d46269bda8df0169da3392a743bd Description: EVAL BOARD FOR MA12040
Packaging: Bulk
Output Type: 2-Channel (Stereo)
Amplifier Type: Class D
Contents: Board(s)
Voltage - Supply: 5V ~ 18V
Max Output Power x Channels @ Load: 40W x 2 @ 4Ohm
Board Type: Fully Populated
Utilized IC / Part: MA12040
Supplied Contents: Board(s)
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REFAUDIODMA12040PTOBO1 REFAUDIODMA12040PTOBO1 Infineon Technologies Infineon-UserManual_ClassD_audio_MA120xxx_reference_boards-ApplicationNotes-v01_00-EN.pdf?fileId=5546d46269bda8df0169da3392a743bd Description: EVAL BOARD FOR MA12040P
Packaging: Bulk
Output Type: 2-Channel (Stereo)
Amplifier Type: Class D
Contents: Board(s)
Voltage - Supply: 5V ~ 18V
Max Output Power x Channels @ Load: 40W x 2 @ 4Ohm
Board Type: Fully Populated
Utilized IC / Part: MA12040P
Supplied Contents: Board(s)
auf Bestellung 3 Stücke:
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IPB156N22NFDATMA1 IPB156N22NFDATMA1 Infineon Technologies Infineon-IPB156N22NFD-DS-v02_00-EN.pdf?fileId=5546d4625d5945ed015dacb0bcce22e7 Description: MOSFET N-CH 220V 72A TO263-3
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 6930 pF @ 110 V
Gate Charge (Qg) (Max) @ Vgs: 87 nC @ 10 V
Drain to Source Voltage (Vdss): 220 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PG-TO263-3-2
Vgs(th) (Max) @ Id: 4V @ 270µA
Power Dissipation (Max): 300W (Tc)
Rds On (Max) @ Id, Vgs: 15.6mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 72A (Tc)
FET Type: N-Channel
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 110
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10
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2+13.32 EUR
10+9.07 EUR
100+6.66 EUR
500+5.92 EUR
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IPT029N08N5ATMA1 IPT029N08N5ATMA1 Infineon Technologies Infineon-IPT029N08N5-DS-v02_00-EN.pdf?fileId=5546d46258f240be0158f28c77120098 Description: MOSFET N-CH 80V 52A/169A HSOF-8
Input Capacitance (Ciss) (Max) @ Vds: 6500 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs: 87 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Supplier Device Package: PG-HSOF-8-1
Vgs(th) (Max) @ Id: 3.8V @ 108µA
Power Dissipation (Max): 168W (Tc)
Rds On (Max) @ Id, Vgs: 2.9mOhm @ 150A, 10V
Current - Continuous Drain (Id) @ 25°C: 52A (Ta), 169A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerSFN
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
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KITLGPWRBOM008TOBO1 KITLGPWRBOM008TOBO1 Infineon Technologies Infineon-UserManual_LVDSPD_low_voltage_drives_scalable_power_demonstration_board-UM-v01_00-EN.pdf?fileId=5546d462696dbf120169b58bda49538e Description: EVAL POWER BOARD 250V
auf Bestellung 5 Stücke:
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SIPC10N65C3X1SA2 Infineon Technologies Description: MOSFET
Packaging: Bulk
Part Status: Active
Produkt ist nicht verfügbar
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SIPC10N65C3X1SA1 Infineon Technologies Description: MOSFET
Packaging: Bulk
Part Status: Obsolete
Produkt ist nicht verfügbar
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FF1000R17IE4S4BOSA2 Infineon Technologies Description: IGBT MOD 1700V 1390A AG-PRIME3-1
Supplier Device Package: AG-PRIME3-1
NTC Thermistor: Yes
Vce(on) (Max) @ Vge, Ic: 2.45V @ 15V, 1000A
Operating Temperature: -40°C ~ 150°C
Configuration: 2 Independent
Input: Standard
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Tray
Input Capacitance (Cies) @ Vce: 81 pF @ 25 V
Current - Collector Cutoff (Max): 5 mA
Power - Max: 6250 W
Voltage - Collector Emitter Breakdown (Max): 1700 V
Current - Collector (Ic) (Max): 1390 A
Produkt ist nicht verfügbar
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FM24C04B-G2TR Infineon Technologies Description: IC FRAM 4KBIT I2C 1MHZ 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 4Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: FRAM (Ferroelectric RAM)
Clock Frequency: 1 MHz
Memory Format: FRAM
Supplier Device Package: 8-SOIC
Part Status: Obsolete
Memory Interface: I²C
Access Time: 550 ns
Memory Organization: 512 x 8
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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IMW120R220M1HXKSA1 IMW120R220M1HXKSA1 Infineon Technologies Infineon-IMW120R220M1H-DS-v01_01-EN.pdf?fileId=5546d46269e1c019016a92fe078366a0 Description: SICFET N-CH 1.2KV 13A TO247-3
Vgs (Max): +23V, -7V
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Part Status: Active
Supplier Device Package: PG-TO247-3-41
Vgs(th) (Max) @ Id: 5.7V @ 1.6mA
Power Dissipation (Max): 75W (Tc)
Rds On (Max) @ Id, Vgs: 286mOhm @ 4A, 18V
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 289 pF @ 800 V
Gate Charge (Qg) (Max) @ Vgs: 8.5 nC @ 18 V
Drain to Source Voltage (Vdss): 1200 V
auf Bestellung 560 Stücke:
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2+9.5 EUR
30+5.41 EUR
120+4.52 EUR
510+3.9 EUR
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IMW120R350M1HXKSA1 IMW120R350M1HXKSA1 Infineon Technologies Infineon-IMW120R350M1H-DS-v01_01-EN.pdf?fileId=5546d46269e1c019016a92fe1a0a66a3 Description: SICFET N-CH 1.2KV 4.7A TO247-3
Drain to Source Voltage (Vdss): 1200 V
Vgs (Max): +23V, -7V
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Part Status: Active
Supplier Device Package: PG-TO247-3-41
Vgs(th) (Max) @ Id: 5.7V @ 1mA
Power Dissipation (Max): 60W (Tc)
Rds On (Max) @ Id, Vgs: 455mOhm @ 2A, 18V
Current - Continuous Drain (Id) @ 25°C: 4.7A (Tc)
FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 182 pF @ 800 V
Gate Charge (Qg) (Max) @ Vgs: 5.3 nC @ 18 V
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IMZ120R140M1HXKSA1 IMZ120R140M1HXKSA1 Infineon Technologies infineon-imz120r140m1h-datasheet-en.pdf Description: SICFET N-CH 1.2KV 19A TO247-4
Power Dissipation (Max): 94W (Tc)
Rds On (Max) @ Id, Vgs: 182mOhm @ 6A, 18V
Current - Continuous Drain (Id) @ 25°C: 19A (Tc)
FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-4
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 454 pF @ 800 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 18 V
Drain to Source Voltage (Vdss): 1200 V
Vgs (Max): +23V, -7V
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Supplier Device Package: PG-TO247-4-1
Vgs(th) (Max) @ Id: 5.7V @ 2.5mA
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IMZ120R220M1HXKSA1 IMZ120R220M1HXKSA1 Infineon Technologies infineon-imz120r220m1h-datasheet-en.pdf Description: SICFET N-CH 1.2KV 13A TO247-4
Drain to Source Voltage (Vdss): 1200 V
Vgs (Max): +23V, -7V
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Part Status: Active
Supplier Device Package: PG-TO247-4-1
Vgs(th) (Max) @ Id: 5.7V @ 1.6mA
Power Dissipation (Max): 75W (Tc)
Rds On (Max) @ Id, Vgs: 220mOhm @ 4A, 18V
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-4
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 289 pF @ 800 V
Gate Charge (Qg) (Max) @ Vgs: 8.5 nC @ 18 V
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IMZ120R350M1HXKSA1 IMZ120R350M1HXKSA1 Infineon Technologies infineon-imz120r350m1h-datasheet-en.pdf Description: SICFET N-CH 1.2KV 4.7A TO247-4
Rds On (Max) @ Id, Vgs: 350mOhm @ 2A, 18V
Current - Continuous Drain (Id) @ 25°C: 4.7A (Tc)
FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Input Capacitance (Ciss) (Max) @ Vds: 182 pF @ 800 V
Gate Charge (Qg) (Max) @ Vgs: 5.3 nC @ 18 V
Drain to Source Voltage (Vdss): 1200 V
Vgs (Max): +23V, -7V
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Part Status: Active
Supplier Device Package: PG-TO247-4-1
Vgs(th) (Max) @ Id: 5.7V @ 1mA
Power Dissipation (Max): 60W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-4
Packaging: Tube
auf Bestellung 1184 Stücke:
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2+9.28 EUR
30+5.28 EUR
120+4.4 EUR
510+3.79 EUR
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TLE5109A16DE2210XUMA1 TLE5109A16DE2210XUMA1 Infineon Technologies infineon-tle5x09a16-d-datasheet-en.pdf Description: IC ANGLE SENSOR 5.0 V
Packaging: Cut Tape (CT)
Package / Case: 16-TSSOP (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Output: Analog Voltage
Termination Style: Gull Wing
Voltage - Supply: 5V
Linearity: ±0.1°
Actuator Type: External Magnet, Not Included
Technology: Magnetoresistive
For Measuring: Angle
Supplier Device Package: PG-TDSO-16-2
Rotation Angle - Electrical, Mechanical: 0° ~ 180°
Output Signal: Cosine, Sine
Part Status: Active
Grade: Automotive
Qualification: AEC-Q100
Produkt ist nicht verfügbar
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IAUA200N04S5N010AUMA1 IAUA200N04S5N010AUMA1 Infineon Technologies infineon-iaua200n04s5n010-datasheet-en.pdf Description: MOSFET N-CH 40V 200A 5HSOF
Packaging: Cut Tape (CT)
Package / Case: 5-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 200A (Tc)
Rds On (Max) @ Id, Vgs: 1mOhm @ 100A, 10V
Power Dissipation (Max): 167W (Tc)
Vgs(th) (Max) @ Id: 3.4V @ 100µA
Supplier Device Package: PG-HSOF-5-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 132 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7650 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
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4+5.35 EUR
10+3.48 EUR
100+2.41 EUR
500+1.96 EUR
1000+1.86 EUR
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IPG20N04S4L07AATMA1 IPG20N04S4L07AATMA1 Infineon Technologies Infineon-IPG20N04S4L_07A-DS-v01_00-en.pdf?fileId=db3a30433d346a2d013d454a0c9d515c Description: MOSFET 2N-CH 40V 20A 8TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount, Wettable Flank
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 65W
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 20A
Input Capacitance (Ciss) (Max) @ Vds: 3980pF @ 25V
Rds On (Max) @ Id, Vgs: 7.2mOhm @ 17A, 10V
Gate Charge (Qg) (Max) @ Vgs: 50nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.2V @ 30µA
Supplier Device Package: PG-TDSON-8-10
Grade: Automotive
Qualification: AEC-Q101
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IDWD15G120C5XKSA1 Infineon-IDWD15G120C5-DS-v02_00-EN.pdf?fileId=5546d462689a790c016933d54d2b5489
IDWD15G120C5XKSA1
Hersteller: Infineon Technologies
Description: DIODE SIC 1.2KV 49A PGTO2472
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: Zero Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 1050pF @ 1V, 1MHz
Current - Average Rectified (Io): 49A
Supplier Device Package: PG-TO247-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.65 V @ 15 A
Current - Reverse Leakage @ Vr: 124 µA @ 1200 V
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AnzahlPreis
2+10.88 EUR
30+6.23 EUR
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IKP28N65ES5XKSA1 Infineon-IKP28N65ES5-DS-v02_01-EN.pdf?fileId=5546d462696dbf1201697b6e31284429
IKP28N65ES5XKSA1
Hersteller: Infineon Technologies
Description: IGBT TRENCH FS 650V 38A TO220-3
Power - Max: 130 W
Current - Collector Pulsed (Icm): 90 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector (Ic) (Max): 38 A
Part Status: Active
Gate Charge: 50 nC
Test Condition: 400V, 28A, 34Ohm, 15V
Switching Energy: 530µJ (on), 400µJ (off)
Td (on/off) @ 25°C: 27ns/184ns
IGBT Type: Trench Field Stop
Supplier Device Package: PG-TO220-3
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 28A
Reverse Recovery Time (trr): 73 ns
Input Type: Standard
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Produkt ist nicht verfügbar
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IM393L6FXKLA1 Infineon-IM393-L6F-DS-v02_00-EN.pdf?fileId=5546d462696dbf1201699a946a8b78d2
IM393L6FXKLA1
Hersteller: Infineon Technologies
Description: POWER MODULE 600V 15A MDIP22
Voltage: 600 V
Current: 15 A
Part Status: Obsolete
Voltage - Isolation: 2000Vrms
Configuration: 3 Phase Inverter
Type: IGBT
Mounting Type: Through Hole
Package / Case: 26-PowerSIP Module, 22 Leads, Formed Leads
Packaging: Tube
Produkt ist nicht verfügbar
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IM393M6FXKLA1 Infineon-IM393-M6F-DS-v02_00-EN.pdf?fileId=5546d462696dbf1201699a947c0278da
IM393M6FXKLA1
Hersteller: Infineon Technologies
Description: POWER MODULE 600V 10A 26PWRSIP
Voltage: 600 V
Current: 10 A
Part Status: Obsolete
Voltage - Isolation: 2000Vrms
Configuration: 3 Phase Inverter
Type: IGBT
Mounting Type: Through Hole
Package / Case: 26-PowerSIP Module, 22 Leads, Formed Leads
Packaging: Tube
Produkt ist nicht verfügbar
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IM393S6FXKLA1 Infineon-IM393-S6F-DS-v02_00-EN.pdf?fileId=5546d462696dbf1201699a9d808378dd
IM393S6FXKLA1
Hersteller: Infineon Technologies
Description: POWER MODULE 600V 6A MDIP22
Voltage: 600 V
Current: 6 A
Part Status: Obsolete
Voltage - Isolation: 2000Vrms
Configuration: 3 Phase Inverter
Type: IGBT
Mounting Type: Through Hole
Package / Case: 26-PowerSIP Module, 22 Leads, Formed Leads
Packaging: Tube
Produkt ist nicht verfügbar
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IM393L6EXKLA1 Infineon-IM393-L6E-DS-v02_00-EN.pdf?fileId=5546d462696dbf1201699a8b350f78c7
IM393L6EXKLA1
Hersteller: Infineon Technologies
Description: POWER MODULE 600V 15A MDIP30
Current: 15 A
Part Status: Obsolete
Voltage - Isolation: 2000Vrms
Configuration: 3 Phase Inverter
Type: IGBT
Mounting Type: Through Hole
Package / Case: 35-PowerDIP Module (0.866", 22.00mm), 30 Leads
Packaging: Tube
Voltage: 600 V
Produkt ist nicht verfügbar
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IM393L6E3XKLA1 Infineon-IM393-L6E-DS-v02_00-EN.pdf?fileId=5546d462696dbf1201699a8b350f78c7
Hersteller: Infineon Technologies
Description: POWER MODULE 600V 15A MDIP30
Voltage: 600 V
Current: 15 A
Part Status: Obsolete
Voltage - Isolation: 2000Vrms
Configuration: 3 Phase Inverter
Type: IGBT
Mounting Type: Through Hole
Package / Case: 35-PowerDIP Module (0.866", 22.00mm), 30 Leads
Packaging: Tube
Produkt ist nicht verfügbar
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IM393M6EXKLA1 Infineon-IM393-M6E-DS-v02_00-EN.pdf?fileId=5546d462696dbf1201699a94732278d5
IM393M6EXKLA1
Hersteller: Infineon Technologies
Description: POWER MODULE 600V 10A MDIP30
Voltage: 600 V
Current: 10 A
Part Status: Obsolete
Voltage - Isolation: 2000Vrms
Configuration: 3 Phase Inverter
Type: IGBT
Mounting Type: Through Hole
Package / Case: 35-PowerDIP Module (0.866", 22.00mm), 30 Leads
Packaging: Tube
Produkt ist nicht verfügbar
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IM393M6E2XKLA1 Infineon-IM393-M6E-DS-v02_00-EN.pdf?fileId=5546d462696dbf1201699a94732278d5
IM393M6E2XKLA1
Hersteller: Infineon Technologies
Description: POWER MODULE 600V 10A MDIP30
Voltage: 600 V
Current: 10 A
Part Status: Obsolete
Voltage - Isolation: 2000Vrms
Configuration: 3 Phase Inverter
Type: IGBT
Mounting Type: Through Hole
Package / Case: 35-PowerDIP Module (0.866", 22.00mm), 30 Leads
Packaging: Tube
Produkt ist nicht verfügbar
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IM393M6E3XKLA1 Infineon-IM393-M6E-DS-v02_00-EN.pdf?fileId=5546d462696dbf1201699a94732278d5
IM393M6E3XKLA1
Hersteller: Infineon Technologies
Description: POWER MODULE 600V 10A MDIP30
Voltage: 600 V
Current: 10 A
Part Status: Obsolete
Voltage - Isolation: 2000Vrms
Configuration: 3 Phase Inverter
Type: IGBT
Mounting Type: Through Hole
Package / Case: 35-PowerDIP Module (0.866", 22.00mm), 30 Leads
Packaging: Tube
Produkt ist nicht verfügbar
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IM393S6E2XKLA1 Infineon-IM393-S6E-DS-v02_00-EN.pdf?fileId=5546d462696dbf1201699a9d912478e4
IM393S6E2XKLA1
Hersteller: Infineon Technologies
Description: POWER MODULE 600V 6A MDIP30
Voltage: 600 V
Current: 6 A
Part Status: Obsolete
Voltage - Isolation: 2000Vrms
Configuration: 3 Phase Inverter
Type: IGBT
Mounting Type: Through Hole
Package / Case: 35-PowerDIP Module (0.866", 22.00mm), 30 Leads
Packaging: Tube
Produkt ist nicht verfügbar
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IM393X6EXKLA1 Infineon-IM393-X6E-DS-v02_00-EN.pdf?fileId=5546d462696dbf1201699a9d9a3578e9
IM393X6EXKLA1
Hersteller: Infineon Technologies
Description: POWER MODULE 600V 20A MDIP30
Voltage: 600 V
Current: 20 A
Part Status: Obsolete
Voltage - Isolation: 2000Vrms
Configuration: 3 Phase Inverter
Type: IGBT
Mounting Type: Through Hole
Package / Case: 35-PowerDIP Module (0.866", 22.00mm), 30 Leads
Packaging: Tube
Produkt ist nicht verfügbar
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EVALM1IM231TOBO1 Infineon-IM231-L6S1B_T2B-DS-v02_00-EN.pdf?fileId=5546d462689a790c0169067334d10ef3
Hersteller: Infineon Technologies
Description: EVAL IM231 CIPOS MICRO IPM
auf Bestellung 2 Stücke:
Lieferzeit 10-14 Tag (e)
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EVALSHNBV01DPS422TOBO1 Infineon-Quick%20Setup%20Guide%20for%20Barometric%20Pressure%20Sensor%20Hub%20Nano-GS-v01_01-EN.pdf?fileId=5546d46269bda8df0169bf3dccc11a5c
EVALSHNBV01DPS422TOBO1
Hersteller: Infineon Technologies
Description: EVAL DPS422 BAROMETRIC HUB
Contents: Board(s)
Embedded: Yes, MCU, 32-Bit
Supplied Contents: Board(s)
Utilized IC / Part: DPS422, XMC1100
Sensor Type: Pressure
Interface: RF
Packaging: Bulk
Produkt ist nicht verfügbar
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S2GOPRESSUREDPS422TOBO1
S2GOPRESSUREDPS422TOBO1
Hersteller: Infineon Technologies
Description: EVAL DPS422 BAROMETRIC
Utilized IC / Part: DPS422
Contents: Board(s)
Type: Sensor
Function: Barometer
Packaging: Bulk
Platform: Shield2Go
Produkt ist nicht verfügbar
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TLF50211ELXUMA2 Infineon-TLF50211EL-DS-v01_10-EN.pdf?fileId=5546d46258fc0bc1015969d2af9641e9
TLF50211ELXUMA2
Hersteller: Infineon Technologies
Description: IC REG BUCK 5V 500MA SSOP-14-3
Packaging: Cut Tape (CT)
Package / Case: 14-LSSOP (0.154", 3.90mm Width) Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 500mA
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Frequency - Switching: 2.25MHz
Voltage - Input (Max): 45V
Topology: Buck
Supplier Device Package: PG-SSOP-14-3
Synchronous Rectifier: No
Voltage - Input (Min): 4.75V
Voltage - Output (Min/Fixed): 5V
Part Status: Active
Grade: Automotive
Qualification: AEC-Q100
auf Bestellung 9439 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
5+3.92 EUR
10+2.92 EUR
25+2.67 EUR
100+2.39 EUR
250+2.26 EUR
500+2.21 EUR
Mindestbestellmenge: 5 Stücke
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AUIR3241SDEMOBOARDTOBO1 Infineon-AUIR3241S%20DEMOBOARD-DS-v01_00-EN.pdf?fileId=5546d46265f064ff016667e5d4133c3f
AUIR3241SDEMOBOARDTOBO1
Hersteller: Infineon Technologies
Description: EVAL BOARD FOR AUIR3241S
Packaging: Bulk
Function: Gate Driver
Type: Power Management
Contents: Board(s)
Utilized IC / Part: AUIR3241S
Supplied Contents: Board(s)
Part Status: Obsolete
Produkt ist nicht verfügbar
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28576411 B
Hersteller: Infineon Technologies
Description: IC FLASH 24FBGA
Memory Format: FLASH
Technology: FLASH - NOR
DigiKey Programmable: Not Verified
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
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FM24W256-EGTR FM24W256_RevL_12-17-18.pdf
Hersteller: Infineon Technologies
Description: IC FRAM 256KBIT 8SOIC
DigiKey Programmable: Not Verified
Part Status: Obsolete
Packaging: Tape & Reel (TR)
Memory Format: FRAM
Memory Size: 256Kbit
Produkt ist nicht verfügbar
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FM24W256-EG FM24W256_RevL_12-17-18.pdf
Hersteller: Infineon Technologies
Description: IC FRAM 256KBIT 8SOIC
DigiKey Programmable: Not Verified
Part Status: Obsolete
Packaging: Tray
Memory Format: FRAM
Memory Size: 256Kbit
Produkt ist nicht verfügbar
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MB88386PMC-GS-TLE1
Hersteller: Infineon Technologies
Description: IC AUTO MCU 80LQFP
Part Status: Obsolete
Packaging: Tray
Produkt ist nicht verfügbar
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IKB20N60TATMA1 IKB20N60T+Rev2_4G.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a304412b407950112b42883273e12
IKB20N60TATMA1
Hersteller: Infineon Technologies
Description: IGBT TRENCH FS 600V 40A TO263-3
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 41 ns
Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 20A
Supplier Device Package: PG-TO263-3-2
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 18ns/199ns
Switching Energy: 770µJ
Test Condition: 400V, 20A, 12Ohm, 15V
Gate Charge: 120 nC
Part Status: Active
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 60 A
Power - Max: 166 W
auf Bestellung 4283 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
3+6.27 EUR
10+4.09 EUR
100+2.84 EUR
500+2.31 EUR
Mindestbestellmenge: 3 Stücke
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IRS2093MTRPBF irs2093mpbf.pdf?fileId=5546d462533600a401535675fb892793
IRS2093MTRPBF
Hersteller: Infineon Technologies
Description: IC AMP CLASS D QUAD 48MLPQ
Part Status: Active
Supplier Device Package: PG-VQFN-48
Voltage - Supply: 10V ~ 15V
Operating Temperature: -40°C ~ 125°C (TA)
Type: Class D
Package / Case: 48-VFQFN Exposed Pad
Features: Depop, Short-Circuit Protection, Shutdown
Packaging: Cut Tape (CT)
Mounting Type: Surface Mount
Output Type: 4-Channel (Quad)
auf Bestellung 2939 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
2+10.68 EUR
10+8.24 EUR
25+7.63 EUR
100+6.95 EUR
250+6.63 EUR
500+6.44 EUR
1000+6.28 EUR
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EVAL12W3PHSMP7TOBO1 Infineon-ApplicationNote_EvaluationBoard_EVAL_12W_3PH_SM_P7-AN-v01_00-EN.pdf?fileId=5546d46269e1c019016a7f8ee5ed40c1
EVAL12W3PHSMP7TOBO1
Hersteller: Infineon Technologies
Description: EVAL BOARD ICE5QSAG IPD95R1K2P7
Packaging: Bulk
Voltage - Output: 12V
Voltage - Input: 185 ~ 460 VAC
Current - Output: 1A
Regulator Topology: Flyback
Board Type: Fully Populated
Utilized IC / Part: ICE5QSAG, IPD95R1K2P7
Supplied Contents: Board(s)
Main Purpose: AC/DC, Primary Side
Outputs and Type: 1 Isolated Output
Part Status: Active
Power - Output: 12W
Contents: Board(s)
auf Bestellung 2 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
1+290.24 EUR
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TPM7012XENONBOARDTOBO1 Infineon-OPTIGA_TPM-PB-v10_15-EN.pdf?fileId=5546d46145da30e80145efa2f0b96a8e
TPM7012XENONBOARDTOBO1
Hersteller: Infineon Technologies
Description: EVAL TPM SLB9670 XENON
Packaging: Bulk
Function: Trusted Platform Module (TPM)
Type: Interface
Contents: Board(s)
Part Status: Obsolete
Produkt ist nicht verfügbar
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DPS368XTSA1 Infineon-DPS368-DS-v01_00-EN.pdf?fileId=5546d46269e1c019016a0c45105d4b40
DPS368XTSA1
Hersteller: Infineon Technologies
Description: SENSOR 17.4PSIG 24BIT 8VLGA
Packaging: Tape & Reel (TR)
Features: Temperature Compensated
Package / Case: 8-VFLGA
Output Type: I2C, SPI
Mounting Type: Surface Mount
Output: 24 b
Operating Pressure: 4.35PSI ~ 17.4PSI (30kPa ~ 120kPa)
Pressure Type: Vented Gauge
Accuracy: ±0.015PSI (±0.1kPa)
Operating Temperature: -40°C ~ 85°C
Termination Style: SMD (SMT) Tab
Voltage - Supply: 1.7V ~ 3.6V
Applications: Board Mount
Supplier Device Package: PG-VLGA-8-1
Port Style: No Port
Maximum Pressure: 145PSI (999.74kPa)
Part Status: Active
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
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EVALSHNBV01DPS368TOBO1 Infineon-Quick%20Setup%20Guide%20for%20Barometric%20Pressure%20Sensor%20Hub%20Nano-GS-v01_01-EN.pdf?fileId=5546d46269bda8df0169bf3dccc11a5c
EVALSHNBV01DPS368TOBO1
Hersteller: Infineon Technologies
Description: SENSOR HUB NANO DPS368
Packaging: Bulk
Interface: I2C, Serial, SPI
Voltage - Supply: 1.7V ~ 3.6V
Sensor Type: Pressure
Utilized IC / Part: DPS368
Supplied Contents: Board(s)
Sensing Range: 300 ~ 1200 hPa
Part Status: Active
Contents: Board(s)
Produkt ist nicht verfügbar
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IPB12CN10NGATMA2
Hersteller: Infineon Technologies
Description: MOSFET N-CH 100V 67A TO263-3
Part Status: Obsolete
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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IRF3717TRPBF-1 IRF3717PbF-1_7-25-14.pdf
IRF3717TRPBF-1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 20V 20A 8-SOIC
Rds On (Max) @ Id, Vgs: 4.4mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 20A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 2890 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 2.45V @ 250µA
Power Dissipation (Max): 2.5W (Ta)
Produkt ist nicht verfügbar
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IRF7331TRPBF-1 IRF7331TRPbF-1_10-16-14.pdf
IRF7331TRPBF-1
Hersteller: Infineon Technologies
Description: MOSFET 2N-CH 20V 7A 8SOIC
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 4.5V
Rds On (Max) @ Id, Vgs: 30mOhm @ 7A, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 1340pF @ 16V
Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
Drain to Source Voltage (Vdss): 20V
Power - Max: 2W (Ta)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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IRF7904TRPBF-1 IRF7904PbF-1_5-19-14.pdf
IRF7904TRPBF-1
Hersteller: Infineon Technologies
Description: MOSFET 2N-CH 30V 7.6A/11A 8SO
Part Status: Obsolete
Supplier Device Package: 8-SO
Vgs(th) (Max) @ Id: 2.25V @ 25µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 11nC @ 4.5V
Rds On (Max) @ Id, Vgs: 16.2mOhm @ 7.6A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 910pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 7.6A, 11A
Drain to Source Voltage (Vdss): 30V
Power - Max: 1.4W, 2W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Half Bridge)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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IRFC048N
Hersteller: Infineon Technologies
Description: MOSFET N-CH
Part Status: Obsolete
Packaging: Bulk
Produkt ist nicht verfügbar
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IRFC048NB
Hersteller: Infineon Technologies
Description: MOSFET N-CH
Produkt ist nicht verfügbar
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BTS500101TADATMA2 BTS50010-1TA_rev1.2_12-5-17.pdf
BTS500101TADATMA2
Hersteller: Infineon Technologies
Description: IC PWR HIC-PROFET N-CH 1:1 TO263
Packaging: Cut Tape (CT)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab), TO-263CB
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 1.6mOhm
Input Type: Non-Inverting
Voltage - Load: 8V ~ 18V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 48A
Ratio - Input:Output: 1:1
Supplier Device Package: P/PG-TO-263-7-10
Fault Protection: Over Temperature, Over Voltage, Reverse Battery, Short Circuit
Part Status: Active
Grade: Automotive
Qualification: AEC-Q100
auf Bestellung 3618 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
2+9.91 EUR
10+7.62 EUR
25+7.04 EUR
100+6.41 EUR
250+6.19 EUR
Mindestbestellmenge: 2 Stücke
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S25FL132K0XMFN013 S25FL116K,S25FL132K,S25FL164K.pdf
S25FL132K0XMFN013
Hersteller: Infineon Technologies
Description: IC FLASH 32MBIT SPI/QUAD 8SOIC
DigiKey Programmable: Not Verified
Memory Organization: 4M x 8
Memory Interface: SPI - Quad I/O
Write Cycle Time - Word, Page: 3ms
Part Status: Obsolete
Supplier Device Package: 8-SOIC
Memory Format: FLASH
Clock Frequency: 108 MHz
Technology: FLASH - NOR
Voltage - Supply: 2.7V ~ 3.6V
Operating Temperature: -40°C ~ 125°C (TA)
Memory Type: Non-Volatile
Memory Size: 32Mbit
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.209", 5.30mm Width)
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
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S25FL032P0XBHI033 S25FL032P.pdf
S25FL032P0XBHI033
Hersteller: Infineon Technologies
Description: IC FLASH 32MBIT SPI/QUAD 24BGA
Clock Frequency: 104 MHz
Technology: FLASH - NOR
Voltage - Supply: 2.7V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Memory Type: Non-Volatile
Memory Size: 32Mbit
Mounting Type: Surface Mount
Package / Case: 24-TBGA
Packaging: Cut Tape (CT)
Memory Organization: 4M x 8
Memory Interface: SPI - Quad I/O
Write Cycle Time - Word, Page: 5µs, 3ms
Part Status: Obsolete
Supplier Device Package: 24-BGA (6x8)
Memory Format: FLASH
DigiKey Programmable: Not Verified
auf Bestellung 2432 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
9+2.16 EUR
10+1.92 EUR
25+1.83 EUR
50+1.76 EUR
100+1.7 EUR
250+1.62 EUR
500+1.57 EUR
1000+1.51 EUR
Mindestbestellmenge: 9 Stücke
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IPB90R340C3ATMA2 Infineon-IPB90R340C3-DS-v02_00-en.pdf?fileId=db3a304336c52a950136c5c59ef500ad
IPB90R340C3ATMA2
Hersteller: Infineon Technologies
Description: MOSFET N-CH 900V 15A TO263-3
Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 94 nC @ 10 V
Drain to Source Voltage (Vdss): 900 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: PG-TO263-3-2
Vgs(th) (Max) @ Id: 3.5V @ 1mA
Power Dissipation (Max): 208W (Tc)
Rds On (Max) @ Id, Vgs: 340mOhm @ 9.2A, 10V
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
1000+4.86 EUR
Mindestbestellmenge: 1000 Stücke
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IPB90R340C3ATMA2 Infineon-IPB90R340C3-DS-v02_00-en.pdf?fileId=db3a304336c52a950136c5c59ef500ad
IPB90R340C3ATMA2
Hersteller: Infineon Technologies
Description: MOSFET N-CH 900V 15A TO263-3
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 340mOhm @ 9.2A, 10V
Power Dissipation (Max): 208W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 1mA
Supplier Device Package: PG-TO263-3-2
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 94 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 100 V
auf Bestellung 1824 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
2+9.42 EUR
10+7.9 EUR
100+6.39 EUR
500+5.68 EUR
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IPI90R1K2C3XKSA2 Infineon-IPI90R1K2C3-DS-v01_00-en.pdf?fileId=db3a30432313ff5e0123a85db6ae5bb3
IPI90R1K2C3XKSA2
Hersteller: Infineon Technologies
Description: MOSFET N-CH 900V 5.1A TO262-3
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.1A (Tc)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 2.8A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 310µA
Supplier Device Package: PG-TO262-3-1
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 710 pF @ 100 V
Produkt ist nicht verfügbar
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BFS 17P E8211
BFS 17P E8211
Hersteller: Infineon Technologies
Description: RF TRANS NPN SOT23-3
Part Status: Active
Supplier Device Package: PG-SOT23
Noise Figure (dB Typ @ f): 3.5dB @ 800MHz
Frequency - Transition: 1.4GHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 2mA, 1V
Voltage - Collector Emitter Breakdown (Max): 15V
Current - Collector (Ic) (Max): 25mA
Power - Max: 280mW
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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BFS17PE6752HTSA1
Hersteller: Infineon Technologies
Description: RF TRANS NPN 15V 1.4GHZ PG-SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Power - Max: 280mW
Current - Collector (Ic) (Max): 25mA
Voltage - Collector Emitter Breakdown (Max): 15V
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 2mA, 1V
Frequency - Transition: 1.4GHz
Noise Figure (dB Typ @ f): 3.5dB @ 800MHz
Supplier Device Package: PG-SOT23
Part Status: Last Time Buy
Produkt ist nicht verfügbar
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BFS17WH6393XTSA1
BFS17WH6393XTSA1
Hersteller: Infineon Technologies
Description: RF TRANS NPN SOT323-3
Part Status: Active
Noise Figure (dB Typ @ f): 3.5dB @ 800MHz
Frequency - Transition: 1.4GHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 2mA, 1V
Voltage - Collector Emitter Breakdown (Max): 15V
Current - Collector (Ic) (Max): 25mA
Power - Max: 280mW
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Packaging: Tape & Reel (TR)
Supplier Device Package: PG-SOT323
Produkt ist nicht verfügbar
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FD450R12KE4PHOSA1 Infineon-FD450R12KE4P-DataSheet-v02_00-EN.pdf?fileId=5546d4626b2d8e69016b54a4ce416fd0
FD450R12KE4PHOSA1
Hersteller: Infineon Technologies
Description: IGBT MODULE 1200V 450A AG62MM-1
auf Bestellung 56 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
1+352.12 EUR
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REFAUDIOAMA12040TOBO1 Infineon-UserManual_ClassD_audio_MA120xxx_reference_boards-ApplicationNotes-v01_00-EN.pdf?fileId=5546d46269bda8df0169da3392a743bd
REFAUDIOAMA12040TOBO1
Hersteller: Infineon Technologies
Description: EVAL BOARD FOR MA12040
Packaging: Bulk
Output Type: 2-Channel (Stereo)
Amplifier Type: Class D
Contents: Board(s)
Voltage - Supply: 5V ~ 18V
Max Output Power x Channels @ Load: 40W x 2 @ 4Ohm
Board Type: Fully Populated
Utilized IC / Part: MA12040
Supplied Contents: Board(s)
Produkt ist nicht verfügbar
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REFAUDIODMA12040PTOBO1 Infineon-UserManual_ClassD_audio_MA120xxx_reference_boards-ApplicationNotes-v01_00-EN.pdf?fileId=5546d46269bda8df0169da3392a743bd
REFAUDIODMA12040PTOBO1
Hersteller: Infineon Technologies
Description: EVAL BOARD FOR MA12040P
Packaging: Bulk
Output Type: 2-Channel (Stereo)
Amplifier Type: Class D
Contents: Board(s)
Voltage - Supply: 5V ~ 18V
Max Output Power x Channels @ Load: 40W x 2 @ 4Ohm
Board Type: Fully Populated
Utilized IC / Part: MA12040P
Supplied Contents: Board(s)
auf Bestellung 3 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
1+99.39 EUR
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IPB156N22NFDATMA1 Infineon-IPB156N22NFD-DS-v02_00-EN.pdf?fileId=5546d4625d5945ed015dacb0bcce22e7
IPB156N22NFDATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 220V 72A TO263-3
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 6930 pF @ 110 V
Gate Charge (Qg) (Max) @ Vgs: 87 nC @ 10 V
Drain to Source Voltage (Vdss): 220 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PG-TO263-3-2
Vgs(th) (Max) @ Id: 4V @ 270µA
Power Dissipation (Max): 300W (Tc)
Rds On (Max) @ Id, Vgs: 15.6mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 72A (Tc)
FET Type: N-Channel
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 110
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10
auf Bestellung 1012 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
2+13.32 EUR
10+9.07 EUR
100+6.66 EUR
500+5.92 EUR
Mindestbestellmenge: 2 Stücke
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IPT029N08N5ATMA1 Infineon-IPT029N08N5-DS-v02_00-EN.pdf?fileId=5546d46258f240be0158f28c77120098
IPT029N08N5ATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 80V 52A/169A HSOF-8
Input Capacitance (Ciss) (Max) @ Vds: 6500 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs: 87 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Supplier Device Package: PG-HSOF-8-1
Vgs(th) (Max) @ Id: 3.8V @ 108µA
Power Dissipation (Max): 168W (Tc)
Rds On (Max) @ Id, Vgs: 2.9mOhm @ 150A, 10V
Current - Continuous Drain (Id) @ 25°C: 52A (Ta), 169A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerSFN
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
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KITLGPWRBOM008TOBO1 Infineon-UserManual_LVDSPD_low_voltage_drives_scalable_power_demonstration_board-UM-v01_00-EN.pdf?fileId=5546d462696dbf120169b58bda49538e
KITLGPWRBOM008TOBO1
Hersteller: Infineon Technologies
Description: EVAL POWER BOARD 250V
auf Bestellung 5 Stücke:
Lieferzeit 10-14 Tag (e)
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SIPC10N65C3X1SA2
Hersteller: Infineon Technologies
Description: MOSFET
Packaging: Bulk
Part Status: Active
Produkt ist nicht verfügbar
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SIPC10N65C3X1SA1
Hersteller: Infineon Technologies
Description: MOSFET
Packaging: Bulk
Part Status: Obsolete
Produkt ist nicht verfügbar
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FF1000R17IE4S4BOSA2
Hersteller: Infineon Technologies
Description: IGBT MOD 1700V 1390A AG-PRIME3-1
Supplier Device Package: AG-PRIME3-1
NTC Thermistor: Yes
Vce(on) (Max) @ Vge, Ic: 2.45V @ 15V, 1000A
Operating Temperature: -40°C ~ 150°C
Configuration: 2 Independent
Input: Standard
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Tray
Input Capacitance (Cies) @ Vce: 81 pF @ 25 V
Current - Collector Cutoff (Max): 5 mA
Power - Max: 6250 W
Voltage - Collector Emitter Breakdown (Max): 1700 V
Current - Collector (Ic) (Max): 1390 A
Produkt ist nicht verfügbar
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FM24C04B-G2TR
Hersteller: Infineon Technologies
Description: IC FRAM 4KBIT I2C 1MHZ 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 4Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: FRAM (Ferroelectric RAM)
Clock Frequency: 1 MHz
Memory Format: FRAM
Supplier Device Package: 8-SOIC
Part Status: Obsolete
Memory Interface: I²C
Access Time: 550 ns
Memory Organization: 512 x 8
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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IMW120R220M1HXKSA1 Infineon-IMW120R220M1H-DS-v01_01-EN.pdf?fileId=5546d46269e1c019016a92fe078366a0
IMW120R220M1HXKSA1
Hersteller: Infineon Technologies
Description: SICFET N-CH 1.2KV 13A TO247-3
Vgs (Max): +23V, -7V
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Part Status: Active
Supplier Device Package: PG-TO247-3-41
Vgs(th) (Max) @ Id: 5.7V @ 1.6mA
Power Dissipation (Max): 75W (Tc)
Rds On (Max) @ Id, Vgs: 286mOhm @ 4A, 18V
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 289 pF @ 800 V
Gate Charge (Qg) (Max) @ Vgs: 8.5 nC @ 18 V
Drain to Source Voltage (Vdss): 1200 V
auf Bestellung 560 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
2+9.5 EUR
30+5.41 EUR
120+4.52 EUR
510+3.9 EUR
Mindestbestellmenge: 2 Stücke
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IMW120R350M1HXKSA1 Infineon-IMW120R350M1H-DS-v01_01-EN.pdf?fileId=5546d46269e1c019016a92fe1a0a66a3
IMW120R350M1HXKSA1
Hersteller: Infineon Technologies
Description: SICFET N-CH 1.2KV 4.7A TO247-3
Drain to Source Voltage (Vdss): 1200 V
Vgs (Max): +23V, -7V
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Part Status: Active
Supplier Device Package: PG-TO247-3-41
Vgs(th) (Max) @ Id: 5.7V @ 1mA
Power Dissipation (Max): 60W (Tc)
Rds On (Max) @ Id, Vgs: 455mOhm @ 2A, 18V
Current - Continuous Drain (Id) @ 25°C: 4.7A (Tc)
FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 182 pF @ 800 V
Gate Charge (Qg) (Max) @ Vgs: 5.3 nC @ 18 V
auf Bestellung 1143 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
3+8.47 EUR
30+4.79 EUR
120+3.98 EUR
510+3.38 EUR
1020+3.35 EUR
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IMZ120R140M1HXKSA1 infineon-imz120r140m1h-datasheet-en.pdf
IMZ120R140M1HXKSA1
Hersteller: Infineon Technologies
Description: SICFET N-CH 1.2KV 19A TO247-4
Power Dissipation (Max): 94W (Tc)
Rds On (Max) @ Id, Vgs: 182mOhm @ 6A, 18V
Current - Continuous Drain (Id) @ 25°C: 19A (Tc)
FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-4
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 454 pF @ 800 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 18 V
Drain to Source Voltage (Vdss): 1200 V
Vgs (Max): +23V, -7V
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Supplier Device Package: PG-TO247-4-1
Vgs(th) (Max) @ Id: 5.7V @ 2.5mA
auf Bestellung 15 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
2+11.88 EUR
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IMZ120R220M1HXKSA1 infineon-imz120r220m1h-datasheet-en.pdf
IMZ120R220M1HXKSA1
Hersteller: Infineon Technologies
Description: SICFET N-CH 1.2KV 13A TO247-4
Drain to Source Voltage (Vdss): 1200 V
Vgs (Max): +23V, -7V
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Part Status: Active
Supplier Device Package: PG-TO247-4-1
Vgs(th) (Max) @ Id: 5.7V @ 1.6mA
Power Dissipation (Max): 75W (Tc)
Rds On (Max) @ Id, Vgs: 220mOhm @ 4A, 18V
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-4
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 289 pF @ 800 V
Gate Charge (Qg) (Max) @ Vgs: 8.5 nC @ 18 V
auf Bestellung 77 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
2+10.3 EUR
30+5.91 EUR
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IMZ120R350M1HXKSA1 infineon-imz120r350m1h-datasheet-en.pdf
IMZ120R350M1HXKSA1
Hersteller: Infineon Technologies
Description: SICFET N-CH 1.2KV 4.7A TO247-4
Rds On (Max) @ Id, Vgs: 350mOhm @ 2A, 18V
Current - Continuous Drain (Id) @ 25°C: 4.7A (Tc)
FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Input Capacitance (Ciss) (Max) @ Vds: 182 pF @ 800 V
Gate Charge (Qg) (Max) @ Vgs: 5.3 nC @ 18 V
Drain to Source Voltage (Vdss): 1200 V
Vgs (Max): +23V, -7V
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Part Status: Active
Supplier Device Package: PG-TO247-4-1
Vgs(th) (Max) @ Id: 5.7V @ 1mA
Power Dissipation (Max): 60W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-4
Packaging: Tube
auf Bestellung 1184 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
2+9.28 EUR
30+5.28 EUR
120+4.4 EUR
510+3.79 EUR
Mindestbestellmenge: 2 Stücke
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TLE5109A16DE2210XUMA1 infineon-tle5x09a16-d-datasheet-en.pdf
TLE5109A16DE2210XUMA1
Hersteller: Infineon Technologies
Description: IC ANGLE SENSOR 5.0 V
Packaging: Cut Tape (CT)
Package / Case: 16-TSSOP (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Output: Analog Voltage
Termination Style: Gull Wing
Voltage - Supply: 5V
Linearity: ±0.1°
Actuator Type: External Magnet, Not Included
Technology: Magnetoresistive
For Measuring: Angle
Supplier Device Package: PG-TDSO-16-2
Rotation Angle - Electrical, Mechanical: 0° ~ 180°
Output Signal: Cosine, Sine
Part Status: Active
Grade: Automotive
Qualification: AEC-Q100
Produkt ist nicht verfügbar
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IAUA200N04S5N010AUMA1 infineon-iaua200n04s5n010-datasheet-en.pdf
IAUA200N04S5N010AUMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 40V 200A 5HSOF
Packaging: Cut Tape (CT)
Package / Case: 5-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 200A (Tc)
Rds On (Max) @ Id, Vgs: 1mOhm @ 100A, 10V
Power Dissipation (Max): 167W (Tc)
Vgs(th) (Max) @ Id: 3.4V @ 100µA
Supplier Device Package: PG-HSOF-5-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 132 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7650 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 2382 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
4+5.35 EUR
10+3.48 EUR
100+2.41 EUR
500+1.96 EUR
1000+1.86 EUR
Mindestbestellmenge: 4 Stücke
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IPG20N04S4L07AATMA1 Infineon-IPG20N04S4L_07A-DS-v01_00-en.pdf?fileId=db3a30433d346a2d013d454a0c9d515c
IPG20N04S4L07AATMA1
Hersteller: Infineon Technologies
Description: MOSFET 2N-CH 40V 20A 8TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount, Wettable Flank
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 65W
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 20A
Input Capacitance (Ciss) (Max) @ Vds: 3980pF @ 25V
Rds On (Max) @ Id, Vgs: 7.2mOhm @ 17A, 10V
Gate Charge (Qg) (Max) @ Vgs: 50nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.2V @ 30µA
Supplier Device Package: PG-TDSON-8-10
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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