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IMW65R048M1HXKSA1 IMW65R048M1HXKSA1 Infineon Technologies Infineon-IMW65R048M1H-DataSheet-v02_00-EN.pdf?fileId=5546d4626f229553016f85b4a66c0466 Description: MOSFET 650V NCH SIC TRENCH
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 39A (Tc)
Rds On (Max) @ Id, Vgs: 64mOhm @ 20.1A, 18V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 5.7V @ 6mA
Supplier Device Package: PG-TO247-3-41
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +23V, -5V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1118 pF @ 400 V
auf Bestellung 734 Stücke:
Lieferzeit 10-14 Tag (e)
2+13.59 EUR
30+7.98 EUR
120+6.75 EUR
510+6.28 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
IPS60R600PFD7SAKMA1 IPS60R600PFD7SAKMA1 Infineon Technologies Infineon-IPS60R600PFD7S-DataSheet-v02_00-EN.pdf?fileId=5546d4626df6ee62016e2294e27e6797 Description: MOSFET N-CH 650V 6A TO251-3
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 1.7A, 10V
Power Dissipation (Max): 31W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 80µA
Supplier Device Package: PG-TO251-3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 8.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 344 pF @ 400 V
Produkt ist nicht verfügbar
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IPD60R280PFD7SAUMA1 IPD60R280PFD7SAUMA1 Infineon Technologies Infineon-IPD60R280PFD7S-DataSheet-v02_00-EN.pdf?fileId=5546d4626df6ee62016e22702a14674d Description: MOSFET N-CH 600V 12A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 3.6A, 10V
Power Dissipation (Max): 51W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 180µA
Supplier Device Package: PG-TO252-3-344
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 15.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 656 pF @ 400 V
Produkt ist nicht verfügbar
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IMW65R107M1HXKSA1 IMW65R107M1HXKSA1 Infineon Technologies Infineon-IMW65R107M1H-DataSheet-v02_00-EN.pdf?fileId=5546d4626f229553016f85d01cd50485 Description: MOSFET 650V NCH SIC TRENCH
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 142mOhm @ 8.9A, 18V
Power Dissipation (Max): 75W (Tc)
Vgs(th) (Max) @ Id: 5.7V @ 3mA
Supplier Device Package: PG-TO247-3-41
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +23V, -5V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 496 pF @ 400 V
auf Bestellung 261 Stücke:
Lieferzeit 10-14 Tag (e)
2+9.64 EUR
30+5.51 EUR
120+4.6 EUR
Mindestbestellmenge: 2
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IPS60R1K0PFD7SAKMA1 IPS60R1K0PFD7SAKMA1 Infineon Technologies Infineon-IPS60R1K0PFD7S-DataSheet-v02_00-EN.pdf?fileId=5546d4626df6ee62016e2282a4c8675c Description: MOSFET N-CH 650V 4.7A TO251-3
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.7A (Tc)
Rds On (Max) @ Id, Vgs: 1Ohm @ 1A, 10V
Power Dissipation (Max): 26W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 50µA
Supplier Device Package: PG-TO251-3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 230 pF @ 400 V
Produkt ist nicht verfügbar
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IMZA65R072M1HXKSA1 IMZA65R072M1HXKSA1 Infineon Technologies Infineon-IMZA65R072M1H-DataSheet-v02_00-EN.pdf?fileId=5546d4626f229553016f85e97cf305b9 Description: MOSFET 650V NCH SIC TRENCH
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
Rds On (Max) @ Id, Vgs: 94mOhm @ 13.3A, 18V
Power Dissipation (Max): 96W (Tc)
Vgs(th) (Max) @ Id: 5.7V @ 4mA
Supplier Device Package: PG-TO247-4-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +23V, -5V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 744 pF @ 400 V
auf Bestellung 169 Stücke:
Lieferzeit 10-14 Tag (e)
2+12.64 EUR
30+7.28 EUR
120+6.17 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
IMW65R027M1HXKSA1 IMW65R027M1HXKSA1 Infineon Technologies Infineon-IMW65R027M1H-DataSheet-v02_00-EN.pdf?fileId=5546d4626f229553016f85ab88170463 Description: MOSFET 650V NCH SIC TRENCH
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 47A (Tc)
Rds On (Max) @ Id, Vgs: 34mOhm @ 38.3A, 18V
Power Dissipation (Max): 189W (Tc)
Vgs(th) (Max) @ Id: 5.7V @ 11mA
Supplier Device Package: PG-TO247-3-41
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +23V, -5V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 2131 pF @ 400 V
auf Bestellung 1016 Stücke:
Lieferzeit 10-14 Tag (e)
1+19.34 EUR
30+11.72 EUR
120+10.05 EUR
510+9.98 EUR
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IPAN60R125PFD7SXKSA1 IPAN60R125PFD7SXKSA1 Infineon Technologies Infineon-IPAN60R125PFD7S-DataSheet-v02_01-EN.pdf?fileId=5546d4626df6ee62016e224bf53a667c Description: MOSFET N-CH 650V 25A TO220
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Rds On (Max) @ Id, Vgs: 125mOhm @ 7.8A, 10V
Power Dissipation (Max): 32W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 390µA
Supplier Device Package: PG-TO220-FP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1503 pF @ 400 V
auf Bestellung 1163 Stücke:
Lieferzeit 10-14 Tag (e)
4+4.61 EUR
50+2.29 EUR
100+2.07 EUR
500+1.68 EUR
1000+1.55 EUR
Mindestbestellmenge: 4
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IPP60R022S7XKSA1 IPP60R022S7XKSA1 Infineon Technologies Infineon-IPP60R022S7-DataSheet-v02_01-EN.pdf?fileId=5546d4626bb628d7016bc25d1085779d Description: MOSFET N-CH 600V 23A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 23A (Tc)
Rds On (Max) @ Id, Vgs: 22mOhm @ 23A, 12V
Power Dissipation (Max): 390W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1.44mA
Supplier Device Package: PG-TO220-3-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 12 V
Input Capacitance (Ciss) (Max) @ Vds: 5639 pF @ 300 V
auf Bestellung 1227 Stücke:
Lieferzeit 10-14 Tag (e)
2+15.05 EUR
50+8.37 EUR
100+7.72 EUR
500+7.18 EUR
Mindestbestellmenge: 2
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IPD60R360PFD7SAUMA1 IPD60R360PFD7SAUMA1 Infineon Technologies Infineon-IPD60R360PFD7S-DataSheet-v02_00-EN.pdf?fileId=5546d4626df6ee62016e227958cc6750 Description: MOSFET N-CH 600V 10A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 360mOhm @ 2.9A, 10V
Power Dissipation (Max): 43W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 140µA
Supplier Device Package: PG-TO252-3-344
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 12.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 534 pF @ 400 V
Produkt ist nicht verfügbar
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IPN60R2K0PFD7SATMA1 IPN60R2K0PFD7SATMA1 Infineon Technologies Infineon-IPN60R2K0PFD7S-DataSheet-v02_00-EN.pdf?fileId=5546d4626df6ee62016e22827e126756 Description: MOSFET N-CH 600V 3A SOT223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-3
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
Rds On (Max) @ Id, Vgs: 2Ohm @ 500mA, 10V
Power Dissipation (Max): 6W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 30µA
Supplier Device Package: PG-SOT223-3-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 3.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 134 pF @ 400 V
auf Bestellung 15000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.29 EUR
6000+0.27 EUR
Mindestbestellmenge: 3000
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IPS60R360PFD7SAKMA1 IPS60R360PFD7SAKMA1 Infineon Technologies Infineon-IPS60R360PFD7S-DataSheet-v02_00-EN.pdf?fileId=5546d4626df6ee62016e2294ceeb6794 Description: MOSFET N-CH 650V 10A TO251-3
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 360mOhm @ 2.9A, 10V
Power Dissipation (Max): 43W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 140µA
Supplier Device Package: PG-TO251-3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 12.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 534 pF @ 400 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPN60R360PFD7SATMA1 IPN60R360PFD7SATMA1 Infineon Technologies Infineon-IPN60R360PFD7S-DataSheet-v02_00-EN.pdf?fileId=5546d4626df6ee62016e228292226759 Description: MOSFET N-CH 600V 10A SOT223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-3
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 360mOhm @ 2.9A, 10V
Power Dissipation (Max): 7W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 140µA
Supplier Device Package: PG-SOT223-3-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 12.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 534 pF @ 400 V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.58 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
IMZA65R107M1HXKSA1 IMZA65R107M1HXKSA1 Infineon Technologies Infineon-IMZA65R107M1H-DataSheet-v02_00-EN.pdf?fileId=5546d4626f229553016f859930890460 Description: MOSFET 650V NCH SIC TRENCH
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 142mOhm @ 8.9A, 18V
Power Dissipation (Max): 75W (Tc)
Vgs(th) (Max) @ Id: 5.7V @ 3mA
Supplier Device Package: PG-TO247-3-41
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +23V, -5V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 496 pF @ 400 V
auf Bestellung 102 Stücke:
Lieferzeit 10-14 Tag (e)
2+9.77 EUR
30+5.59 EUR
Mindestbestellmenge: 2
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IPS60R210PFD7SAKMA1 IPS60R210PFD7SAKMA1 Infineon Technologies Infineon-IPS60R210PFD7S-DataSheet-v02_00-EN.pdf?fileId=5546d4626df6ee62016e228bcd866791 Description: MOSFET N-CH 650V 16A TO251-3
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Rds On (Max) @ Id, Vgs: 210mOhm @ 4.9A, 10V
Power Dissipation (Max): 64W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 240µA
Supplier Device Package: PG-TO251-3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1015 pF @ 400 V
Produkt ist nicht verfügbar
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IPT60R065S7XTMA1 IPT60R065S7XTMA1 Infineon Technologies Infineon-IPT60R065S7-DataSheet-v02_01-EN.pdf?fileId=5546d4626bb628d7016bc253e7b6779a Description: MOSFET N-CH 600V 8A 8HSOF
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 65mOhm @ 8A, 12V
Power Dissipation (Max): 167W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 490µA
Supplier Device Package: PG-HSOF-8-2
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 12 V
Input Capacitance (Ciss) (Max) @ Vds: 1932 pF @ 300 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IMZA65R027M1HXKSA1 IMZA65R027M1HXKSA1 Infineon Technologies Infineon-IMZA65R027M1H-DataSheet-v02_00-EN.pdf?fileId=5546d4626f229553016f85d997f90532 Description: MOSFET 650V NCH SIC TRENCH
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 59A (Tc)
Rds On (Max) @ Id, Vgs: 34mOhm @ 38.3A, 18V
Power Dissipation (Max): 189W (Tc)
Vgs(th) (Max) @ Id: 5.7V @ 11mA
Supplier Device Package: PG-TO247-4-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +23V, -5V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 2131 pF @ 400 V
auf Bestellung 266 Stücke:
Lieferzeit 10-14 Tag (e)
1+25.56 EUR
30+15.75 EUR
120+13.99 EUR
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IPN60R360PFD7SATMA1 IPN60R360PFD7SATMA1 Infineon Technologies Infineon-IPN60R360PFD7S-DataSheet-v02_00-EN.pdf?fileId=5546d4626df6ee62016e228292226759 Description: MOSFET N-CH 600V 10A SOT223
Packaging: Cut Tape (CT)
Package / Case: TO-261-3
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 360mOhm @ 2.9A, 10V
Power Dissipation (Max): 7W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 140µA
Supplier Device Package: PG-SOT223-3-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 12.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 534 pF @ 400 V
auf Bestellung 3054 Stücke:
Lieferzeit 10-14 Tag (e)
8+2.29 EUR
13+1.44 EUR
100+0.96 EUR
500+0.75 EUR
1000+0.68 EUR
Mindestbestellmenge: 8
Im Einkaufswagen  Stück im Wert von  UAH
IPD60R360PFD7SAUMA1 IPD60R360PFD7SAUMA1 Infineon Technologies Infineon-IPD60R360PFD7S-DataSheet-v02_00-EN.pdf?fileId=5546d4626df6ee62016e227958cc6750 Description: MOSFET N-CH 600V 10A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 360mOhm @ 2.9A, 10V
Power Dissipation (Max): 43W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 140µA
Supplier Device Package: PG-TO252-3-344
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 12.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 534 pF @ 400 V
auf Bestellung 2161 Stücke:
Lieferzeit 10-14 Tag (e)
8+2.39 EUR
12+1.52 EUR
100+1.02 EUR
500+0.8 EUR
1000+0.73 EUR
Mindestbestellmenge: 8
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IPT60R065S7XTMA1 IPT60R065S7XTMA1 Infineon Technologies Infineon-IPT60R065S7-DataSheet-v02_01-EN.pdf?fileId=5546d4626bb628d7016bc253e7b6779a Description: MOSFET N-CH 600V 8A 8HSOF
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 65mOhm @ 8A, 12V
Power Dissipation (Max): 167W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 490µA
Supplier Device Package: PG-HSOF-8-2
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 12 V
Input Capacitance (Ciss) (Max) @ Vds: 1932 pF @ 300 V
Produkt ist nicht verfügbar
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IPD60R280PFD7SAUMA1 IPD60R280PFD7SAUMA1 Infineon Technologies Infineon-IPD60R280PFD7S-DataSheet-v02_00-EN.pdf?fileId=5546d4626df6ee62016e22702a14674d Description: MOSFET N-CH 600V 12A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 3.6A, 10V
Power Dissipation (Max): 51W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 180µA
Supplier Device Package: PG-TO252-3-344
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 15.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 656 pF @ 400 V
auf Bestellung 2876 Stücke:
Lieferzeit 10-14 Tag (e)
7+2.83 EUR
10+1.9 EUR
100+1.33 EUR
500+1.08 EUR
1000+0.98 EUR
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IPN60R2K0PFD7SATMA1 IPN60R2K0PFD7SATMA1 Infineon Technologies Infineon-IPN60R2K0PFD7S-DataSheet-v02_00-EN.pdf?fileId=5546d4626df6ee62016e22827e126756 Description: MOSFET N-CH 600V 3A SOT223
Packaging: Cut Tape (CT)
Package / Case: TO-261-3
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
Rds On (Max) @ Id, Vgs: 2Ohm @ 500mA, 10V
Power Dissipation (Max): 6W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 30µA
Supplier Device Package: PG-SOT223-3-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 3.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 134 pF @ 400 V
auf Bestellung 15079 Stücke:
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16+1.11 EUR
23+0.8 EUR
100+0.54 EUR
500+0.44 EUR
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FR900R12IP4DBPSA1 FR900R12IP4DBPSA1 Infineon Technologies Infineon-FR900R12IP4D-DataSheet-v03_00-EN.pdf?fileId=5546d4626c1f3dc3016cae709c2a37eb Description: IGBT MODULE PP IHM I XHP 1 7KV
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Dual Brake Chopper
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 900A
NTC Thermistor: Yes
Supplier Device Package: AG-PRIME3-1
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 900 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 54 nF @ 25 V
auf Bestellung 2 Stücke:
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1+1858.37 EUR
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IDK20G120C5XTMA1 IDK20G120C5XTMA1 Infineon Technologies Infineon-IDK20G120C5-DataSheet-v02_01-EN.pdf?fileId=5546d4626df6ee62016e3bf103270f47 Description: DIODE SIC 1.2KV 56A PGTO26321
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 1050pF @ 1V, 1MHz
Current - Average Rectified (Io): 56A
Supplier Device Package: PG-TO263-2-1
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 20 A
Current - Reverse Leakage @ Vr: 123 µA @ 1200 V
Reverse Recovery Time (trr): 0 ns
auf Bestellung 1000 Stücke:
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1000+5.56 EUR
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IDK20G120C5XTMA1 IDK20G120C5XTMA1 Infineon Technologies Infineon-IDK20G120C5-DataSheet-v02_01-EN.pdf?fileId=5546d4626df6ee62016e3bf103270f47 Description: DIODE SIC 1.2KV 56A PGTO26321
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 1050pF @ 1V, 1MHz
Current - Average Rectified (Io): 56A
Supplier Device Package: PG-TO263-2-1
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 20 A
Current - Reverse Leakage @ Vr: 123 µA @ 1200 V
Reverse Recovery Time (trr): 0 ns
auf Bestellung 1193 Stücke:
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2+11.26 EUR
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F3L200R07W2S5FB11BOMA1 F3L200R07W2S5FB11BOMA1 Infineon Technologies Infineon-F3L200R07W2S5F_B11-DataSheet-v03_00-EN.pdf?fileId=5546d46272e49d2a01734dfbd7647113 Description: IGBT MODULE 650V 95A AG-EASY2B
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Level Inverter
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.38V @ 15V, 100A
NTC Thermistor: Yes
Supplier Device Package: AG-EASY2B
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 95 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 14.3 nF @ 25 V
Produkt ist nicht verfügbar
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FS3L40R07W2H5FB11BOMA1 FS3L40R07W2H5FB11BOMA1 Infineon Technologies Infineon-FS3L40R07W2H5F_B11-DataSheet-v03_00-EN.pdf?fileId=5546d4626c1f3dc3016c850552697db5 Description: IGBT MODULE LOW POWER EASY
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.81V @ 15V, 20A
NTC Thermistor: Yes
Supplier Device Package: AG-EASY2B-2
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 18 µA
Input Capacitance (Cies) @ Vce: 2 nF @ 25 V
Produkt ist nicht verfügbar
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FP10R12W1T7B3BOMA1 FP10R12W1T7B3BOMA1 Infineon Technologies Infineon-FP10R12W1T7_B3-DataSheet-v00_10-EN.pdf?fileId=5546d46270c4f93e0170f1856f6372d4 Description: IGBT MODULE LOW POWER EASY
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Three Phase Bridge Rectifier
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.6V @ 15V, 10A (Typ)
NTC Thermistor: Yes
Supplier Device Package: AG-EASY1B-2
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 4.5 µA
Input Capacitance (Cies) @ Vce: 1.89 nF @ 25 V
auf Bestellung 11 Stücke:
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1+63.73 EUR
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DF150R12W1H3FB11BOMA1 DF150R12W1H3FB11BOMA1 Infineon Technologies Description: IGBT MODULE LOW POWER EASY
auf Bestellung 24 Stücke:
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1ED44175N01BXTSA1 1ED44175N01BXTSA1 Infineon Technologies Infineon-1ED44175N01B-DataSheet-v01_00-EN.pdf?fileId=5546d4626df6ee62016e3bf0b3230f35 Description: IC GATE DRVR LOW-SIDE SOT23-6
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 12.7V ~ 20V
Input Type: Non-Inverting
Supplier Device Package: PG-SOT23-6-3
Rise / Fall Time (Typ): 5ns, 5ns
Channel Type: Single
Driven Configuration: Low-Side
Number of Drivers: 1
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 1.2V, 1.9V
Current - Peak Output (Source, Sink): 2.6A, 2.6A
Part Status: Active
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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IM240S6Y1BAKMA1 IM240S6Y1BAKMA1 Infineon Technologies Infineon-IM240-DataSheet-v02_03-EN.pdf?fileId=5546d4626fc1ce0b016ff190f50445ea Description: CIPOS MICRO
auf Bestellung 235 Stücke:
Lieferzeit 10-14 Tag (e)
2+16.26 EUR
10+14.69 EUR
25+14 EUR
100+12.16 EUR
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FS50R12W1T7B11BOMA1 FS50R12W1T7B11BOMA1 Infineon Technologies Infineon-FS50R12W1T7_B11-DataSheet-v02_00-EN.pdf?fileId=5546d46270c4f93e0170f18717047301 Description: IGBT MODULE LOW POWER EASY
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 175°C
NTC Thermistor: No
Supplier Device Package: Module
Part Status: Active
Current - Collector (Ic) (Max): 50 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Cutoff (Max): 7.9 µA
Input Capacitance (Cies) @ Vce: 11.1 nF @ 25 V
auf Bestellung 48 Stücke:
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1+76.86 EUR
24+54.7 EUR
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1ED44175N01BXTSA1 1ED44175N01BXTSA1 Infineon Technologies Infineon-1ED44175N01B-DataSheet-v01_00-EN.pdf?fileId=5546d4626df6ee62016e3bf0b3230f35 Description: IC GATE DRVR LOW-SIDE SOT23-6
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 12.7V ~ 20V
Input Type: Non-Inverting
Supplier Device Package: PG-SOT23-6-3
Rise / Fall Time (Typ): 5ns, 5ns
Channel Type: Single
Driven Configuration: Low-Side
Number of Drivers: 1
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 1.2V, 1.9V
Current - Peak Output (Source, Sink): 2.6A, 2.6A
Part Status: Active
DigiKey Programmable: Not Verified
auf Bestellung 1482 Stücke:
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16+1.14 EUR
22+0.81 EUR
25+0.73 EUR
100+0.64 EUR
250+0.6 EUR
500+0.57 EUR
1000+0.55 EUR
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TLE4929CXVAM18NAHAMA1 TLE4929CXVAM18NAHAMA1 Infineon Technologies Infineon-TLE4929C-DataSheet-v01_10-EN.pdf?fileId=5546d46265257de8016537ce85935e53 Description: IC SPEED SENSOR SSO-3
Packaging: Tape & Box (TB)
Features: Programmable, Temperature Compensated
Package / Case: 3-SIP Module
Output Type: Open Drain
Mounting Type: Through Hole
Axis: Single
Operating Temperature: -40°C ~ 175°C (TJ)
Voltage - Supply: 4V ~ 16V
Technology: Hall Effect
Resolution: 16 b
Sensing Range: ±120mT
Current - Output (Max): 15mA
Current - Supply (Max): 13.4mA
Supplier Device Package: PG-SSO-3-52
Grade: Automotive
Qualification: AEC-Q100
auf Bestellung 1500 Stücke:
Lieferzeit 10-14 Tag (e)
1500+4.56 EUR
Mindestbestellmenge: 1500
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BSC0923NDIATMA1 BSC0923NDIATMA1 Infineon Technologies Infineon-BSC0923NDI-DS-v02_00-en.pdf?fileId=db3a304336ca04c90136caa90c9e00b6 Description: MOSFET 2N-CH 30V 17A/32A TISON8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Asymmetrical
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 17A, 32A
Input Capacitance (Ciss) (Max) @ Vds: 1160pF @ 15V
Rds On (Max) @ Id, Vgs: 5mOhm @ 20A, 10V
Gate Charge (Qg) (Max) @ Vgs: 10nC @ 4.5V
FET Feature: Logic Level Gate, 4.5V Drive
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TISON-8
Part Status: Active
auf Bestellung 3949 Stücke:
Lieferzeit 10-14 Tag (e)
7+2.87 EUR
10+1.82 EUR
100+1.22 EUR
500+0.97 EUR
1000+0.88 EUR
2000+0.81 EUR
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BSZ013NE2LS5IATMA1 BSZ013NE2LS5IATMA1 Infineon Technologies Infineon-BSZ013NE2LS5I-DS-v02_00-EN.pdf?fileId=5546d4624f205c9a014f6030a74c7cc5 Description: MOSFET N-CH 25V 32A/40A TSDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 32A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs: 1.3mOhm @ 20A, 10V
Power Dissipation (Max): 2.1W (Ta), 69W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TSDSON-8-FL
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3400 pF @ 12 V
auf Bestellung 32870 Stücke:
Lieferzeit 10-14 Tag (e)
6+3.34 EUR
10+2.14 EUR
100+1.45 EUR
500+1.16 EUR
1000+1.11 EUR
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IRF9383MTRPBF IRF9383MTRPBF Infineon Technologies irf9383mpbf.pdf?fileId=5546d462533600a40153561169a11dab Description: MOSFET P-CH 30V 22A DIRECTFET
Packaging: Cut Tape (CT)
Package / Case: DirectFET™ Isometric MX
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 160A (Tc)
Rds On (Max) @ Id, Vgs: 2.9mOhm @ 22A, 10V
Power Dissipation (Max): 2.1W (Ta), 113W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 150µA
Supplier Device Package: DIRECTFET™ MX
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7305 pF @ 15 V
Produkt ist nicht verfügbar
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BSL202SNH6327XTSA1 BSL202SNH6327XTSA1 Infineon Technologies Infineon-BSL202SN-DS-v02_00-en.pdf?fileId=db3a3043156fd573011622e191d41f68 Description: MOSFET N-CH 20V 7.5A TSOP-6
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.5A (Ta)
Rds On (Max) @ Id, Vgs: 22mOhm @ 7.5A, 4.5V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 1.2V @ 30µA
Supplier Device Package: PG-TSOP6-6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 8.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1147 pF @ 10 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 177 Stücke:
Lieferzeit 10-14 Tag (e)
14+1.32 EUR
22+0.82 EUR
100+0.53 EUR
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BSS169H6906XTSA1 BSS169H6906XTSA1 Infineon Technologies INFNS19228-1.pdf?t.download=true&u=5oefqw Description: MOSFET N-CH 100V 170MA SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel, Depletion Mode
Current - Continuous Drain (Id) @ 25°C: 170mA (Ta)
Rds On (Max) @ Id, Vgs: 6Ohm @ 170mA, 10V
Power Dissipation (Max): 360mW (Ta)
Vgs(th) (Max) @ Id: 1.8V @ 50µA
Supplier Device Package: PG-SOT23
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 0V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 2.8 nC @ 7 V
Input Capacitance (Ciss) (Max) @ Vds: 68 pF @ 10 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 43881 Stücke:
Lieferzeit 10-14 Tag (e)
10+1.83 EUR
16+1.14 EUR
100+0.75 EUR
500+0.58 EUR
1000+0.52 EUR
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IRFH5302DTRPBF Infineon Technologies irfh5302dpbf.pdf?fileId=5546d462533600a40153561b4f5e1ec0 Description: MOSFET N-CH 30V 29A/100A PQFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 29A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 2.5mOhm @ 50A, 10V
Power Dissipation (Max): 3.6W (Ta), 104W (Tc)
Vgs(th) (Max) @ Id: 2.35V @ 100µA
Supplier Device Package: PQFN (5x6) Single Die
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3635 pF @ 25 V
Produkt ist nicht verfügbar
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BSP135H6433XTMA1 BSP135H6433XTMA1 Infineon Technologies Infineon-BSP135-DS-v01_33-en.pdf?fileId=db3a30433c1a8752013c1fd4c839399b Description: MOSFET N-CH 600V 120MA SOT223
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel, Depletion Mode
Current - Continuous Drain (Id) @ 25°C: 120mA (Ta)
Rds On (Max) @ Id, Vgs: 45Ohm @ 120mA, 10V
Power Dissipation (Max): 1.8W (Ta)
Vgs(th) (Max) @ Id: 1V @ 94µA
Supplier Device Package: SOT-223
Part Status: Last Time Buy
Drive Voltage (Max Rds On, Min Rds On): 0V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 4.9 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 146 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 6092 Stücke:
Lieferzeit 10-14 Tag (e)
6+3.04 EUR
10+1.94 EUR
100+1.31 EUR
500+1.05 EUR
1000+0.96 EUR
2000+0.89 EUR
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BSC015NE2LS5IATMA1 BSC015NE2LS5IATMA1 Infineon Technologies Infineon-BSC015NE2LS5I-DS-v02_00-EN.pdf?fileId=5546d4624f205c9a014f3bdacb5c1b44 Description: MOSFET N-CH 25V 33A/100A TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 33A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 1.5mOhm @ 30A, 10V
Power Dissipation (Max): 2.5W (Ta), 50W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TDSON-8-6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 12 V
auf Bestellung 11019 Stücke:
Lieferzeit 10-14 Tag (e)
7+2.73 EUR
11+1.73 EUR
100+1.16 EUR
500+0.92 EUR
1000+0.84 EUR
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BSZ215CHXTMA1 BSZ215CHXTMA1 Infineon Technologies Infineon-BSZ215C%20H-DS-v02_03-EN.pdf?fileId=5546d46250cc1fdf015133809974350a Description: MOSFET N/P-CH 20V 5.1A 8TSDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: N and P-Channel Complementary
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.5W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 5.1A, 3.2A
Input Capacitance (Ciss) (Max) @ Vds: 419pF @ 10V
Rds On (Max) @ Id, Vgs: 55mOhm @ 5.1A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 2.8nC @ 4.5V
FET Feature: Logic Level Gate, 2.5V Drive
Vgs(th) (Max) @ Id: 1.4V @ 110µA
Supplier Device Package: PG-TSDSON-8
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 5463 Stücke:
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100+1.3 EUR
500+1.04 EUR
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IRF9332TRPBF IRF9332TRPBF Infineon Technologies irf9332pbf.pdf?fileId=5546d462533600a40153561136b71d9f Description: MOSFET P-CH 30V 9.8A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 9.8A (Ta)
Rds On (Max) @ Id, Vgs: 17.5mOhm @ 9.8A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 2.4V @ 25µA
Supplier Device Package: 8-SO
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1270 pF @ 25 V
Produkt ist nicht verfügbar
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BSP135H6906XTSA1 BSP135H6906XTSA1 Infineon Technologies Infineon-BSP135-DS-v01_33-en.pdf?fileId=db3a30433c1a8752013c1fd4c839399b Description: MOSFET N-CH 600V 120MA SOT223-4
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel, Depletion Mode
Current - Continuous Drain (Id) @ 25°C: 120mA (Ta)
Rds On (Max) @ Id, Vgs: 45Ohm @ 120mA, 10V
Power Dissipation (Max): 1.8W (Ta)
Vgs(th) (Max) @ Id: 1V @ 94µA
Supplier Device Package: PG-SOT223-4
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 0V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 4.9 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 146 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 13414 Stücke:
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5+3.56 EUR
10+2.28 EUR
100+1.56 EUR
500+1.24 EUR
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BSZ014NE2LS5IFATMA1 BSZ014NE2LS5IFATMA1 Infineon Technologies Infineon-BSZ014NE2LS5IF-DS-v02_01-EN.pdf?fileId=5546d4624cb7f111014d000b50402513 Description: MOSFET N-CH 25V 31A/40A TSDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 31A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs: 1.45mOhm @ 20A, 10V
FET Feature: Schottky Diode (Body)
Power Dissipation (Max): 2.1W (Ta), 69W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TSDSON-8-FL
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2300 pF @ 12 V
auf Bestellung 40949 Stücke:
Lieferzeit 10-14 Tag (e)
5+3.63 EUR
10+2.33 EUR
100+1.59 EUR
500+1.27 EUR
1000+1.24 EUR
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IPB60R280CFD7ATMA1 IPB60R280CFD7ATMA1 Infineon Technologies Infineon-IPB60R280CFD7-DataSheet-v02_00-EN.pdf?fileId=5546d4626b2d8e69016bb2a0d76e1ac5 Description: MOSFET N-CH 600V 9A TO263-3-2
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 3.6A, 10V
Power Dissipation (Max): 51W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 180µA
Supplier Device Package: PG-TO263-3-2
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 807 pF @ 400 V
Produkt ist nicht verfügbar
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ESD106B1W0201E6327XTSA1 ESD106B1W0201E6327XTSA1 Infineon Technologies Infineon-ESD106-B1-W0201-DataSheet-v02_00-EN.pdf?fileId=5546d4626cb27db2016cb48375972ca5 Description: TVS DIODE 5.5VWM 10VC PGWLL23
Packaging: Tape & Reel (TR)
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C (TA)
Applications: RF Antenna
Capacitance @ Frequency: 0.13pF @ 2.5GHz
Current - Peak Pulse (10/1000µs): 1.5A (8/20µs)
Voltage - Reverse Standoff (Typ): 5.5V (Max)
Supplier Device Package: PG-WLL-2-3
Bidirectional Channels: 1
Voltage - Breakdown (Min): 6.1V
Voltage - Clamping (Max) @ Ipp: 10V (Typ)
Power - Peak Pulse: 15W
Power Line Protection: No
Part Status: Active
auf Bestellung 60000 Stücke:
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15000+0.039 EUR
45000+0.036 EUR
Mindestbestellmenge: 15000
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BSC037N08NS5TATMA1 BSC037N08NS5TATMA1 Infineon Technologies Infineon-BSC037N08NS5T-DataSheet-v02_01-EN.pdf?fileId=5546d4626bb628d7016bd24725382f23 Description: MOSFET N-CH 80V 22A/100A TDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 3.7mOhm @ 50A, 10V
Power Dissipation (Max): 3W (Ta), 136W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 72µA
Supplier Device Package: PG-TDSON-8-7
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4200 pF @ 40 V
Produkt ist nicht verfügbar
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BSC155N06NDATMA1 BSC155N06NDATMA1 Infineon Technologies Infineon-BSC155N06ND-DS-v02_00-EN.pdf?fileId=5546d462689a790c016905fc90d60cec Description: MOSFET 2N-CH 60V 20A 8TDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 50W (Tc)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 2250pF @ 30V
Rds On (Max) @ Id, Vgs: 15.5mOhm @ 17A, 10V
Gate Charge (Qg) (Max) @ Vgs: 29nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 20µA
Supplier Device Package: PG-TDSON-8-4
Part Status: Active
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
5000+0.77 EUR
Mindestbestellmenge: 5000
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TLE49662GHTSA1 TLE49662GHTSA1 Infineon Technologies Infineon-TLE4966-2G-DataSheet-v01_00-EN.pdf?fileId=5546d4626b2d8e69016b511123480c28 Description: MAG SWITCH SPEC PURP TSOP6-6-9
Packaging: Tape & Reel (TR)
Features: Temperature Compensated
Package / Case: SOT-23-6 Thin, TSOT-23-6
Output Type: Digital
Polarization: Either
Mounting Type: Surface Mount
Function: Special Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 2.7V ~ 18V
Technology: Hall Effect
Sensing Range: 10mT Trip, -10mT Release
Current - Output (Max): 10mA
Current - Supply (Max): 7mA
Supplier Device Package: PG-TSOP6-6-9
Test Condition: 25°C
Part Status: Active
Produkt ist nicht verfügbar
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AIGB40N65F5ATMA1 AIGB40N65F5ATMA1 Infineon Technologies Infineon-Semiconductor_solutions_for_hybrid_electric_and_electric_cars-ABR-v01_00-EN.pdf?fileId=5546d46269e1c019016a4a76250c4ab4 Description: IGBT NPT 650V 40A TO263-3-2
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Input Type: Standard
Supplier Device Package: PG-TO263-3-2
IGBT Type: NPT
Part Status: Active
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Produkt ist nicht verfügbar
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TC389QP160F300SADLXUMA1 TC389QP160F300SADLXUMA1 Infineon Technologies Infineon-TriCore_Family_BR-ProductBrochure-v01_00-EN.pdf?fileId=5546d4625d5945ed015dc81f47b436c7 Description: IC MCU 32BIT 10MB FLASH 516FBGA
Packaging: Tape & Reel (TR)
Package / Case: 516-FBGA
Mounting Type: Surface Mount
Speed: 300MHz
Program Memory Size: 10MB (10M x 8)
RAM Size: 1.53K x 8
Operating Temperature: -40°C ~ 150°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: TriCore™
Core Size: 32-Bit Quad-Core
Voltage - Supply (Vcc/Vdd): 3.3V, 5V
Connectivity: ASC, CANbus, Ethernet, FlexRay, HSSL, I2C, LINbus, MSC, PSI, QSPI, SENT
Peripherals: DMA, I2S, PWM, WDT
Supplier Device Package: PG-FBGA-516-1
Part Status: Not For New Designs
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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IPL60R225CFD7AUMA1 IPL60R225CFD7AUMA1 Infineon Technologies Infineon-IPL60R225CFD7-DataSheet-v02_00-EN.pdf?fileId=5546d4626b2d8e69016bb2cea4ee2edd Description: MOSFET N-CH 600V 12A VSON-4
Packaging: Tape & Reel (TR)
Package / Case: 4-PowerTSFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 225mOhm @ 4.9A, 10V
Power Dissipation (Max): 68W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 240µA
Supplier Device Package: PG-VSON-4-1
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1015 pF @ 400 V
auf Bestellung 3000 Stücke:
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3000+1.87 EUR
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IPA600N25NM3SXKSA1 IPA600N25NM3SXKSA1 Infineon Technologies Infineon-IPA600N25NM3S-DataSheet-v02_01-EN.pdf?fileId=5546d4626cb27db2016d5d19624b6e3d Description: MOSFET N-CH 250V 15A TO220
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 60mOhm @ 15A, 10V
Power Dissipation (Max): 38W (Tc)
Vgs(th) (Max) @ Id: 4V @ 89µA
Supplier Device Package: PG-TO220 Full Pack
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2300 pF @ 100 V
auf Bestellung 140 Stücke:
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4+5.24 EUR
50+2.64 EUR
100+2.39 EUR
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TC387QP160F300SADKXUMA1 TC387QP160F300SADKXUMA1 Infineon Technologies Description: IC MCU 32BIT 10MB FLASH 292LFBGA
Packaging: Tape & Reel (TR)
Package / Case: 292-LFBGA
Mounting Type: Surface Mount
Speed: 300MHz
Program Memory Size: 10MB (10M x 8)
RAM Size: 1.53K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: TriCore™
Core Size: 32-Bit Quad-Core
Voltage - Supply (Vcc/Vdd): 3.3V, 5V
Connectivity: ASC, CANbus, Ethernet, FlexRay, HSSL, I2C, LINbus, MSC, PSI, QSPI, SENT
Peripherals: DMA, I2S, PWM, WDT
Supplier Device Package: PG-LFBGA-292-11
Part Status: Obsolete
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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IPA60R160P7XKSA1 IPA60R160P7XKSA1 Infineon Technologies Infineon-IPA60R160P7-DS-v02_00-EN.pdf?fileId=5546d462696dbf120169b4543f6d483f Description: MOSFET N-CH 600V 20A TO220
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 160mOhm @ 6.3A, 10V
Power Dissipation (Max): 26W (Tc)
Vgs(th) (Max) @ Id: 4V @ 350µA
Supplier Device Package: PG-TO220 Full Pack
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1317 pF @ 400 V
auf Bestellung 144 Stücke:
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4+5.58 EUR
50+2.81 EUR
100+2.54 EUR
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IPT019N08N5ATMA1 IPT019N08N5ATMA1 Infineon Technologies Infineon-IPT019N08N5-DataSheet-v02_00-EN.pdf?fileId=5546d46269e1c019016ac0292ba732e4 Description: MOSFET N-CH 80V 32A/247A 8HSOF
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 32A (Ta), 247A (Tc)
Rds On (Max) @ Id, Vgs: 1.9mOhm @ 150A, 10V
Power Dissipation (Max): 231W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 159µA
Supplier Device Package: PG-HSOF-8-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 127 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9200 pF @ 40 V
auf Bestellung 2000 Stücke:
Lieferzeit 10-14 Tag (e)
2000+3.35 EUR
Mindestbestellmenge: 2000
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IMM102T015MXUMA1 IMM102T015MXUMA1 Infineon Technologies Infineon-IMM100T-DataSheet-v01_00-EN.pdf?fileId=5546d4626b2d8e69016b7012c7993b83 Description: IMOTION
Packaging: Tape & Reel (TR)
Package / Case: 38-PowerVQFN
Mounting Type: Surface Mount
Function: Driver
Current - Output: 4A
Interface: PWM
Operating Temperature: -40°C ~ 115°C (TJ)
Output Configuration: Half Bridge (3)
Voltage - Supply: 13.5V ~ 16.5V
Applications: General Purpose
Technology: Power MOSFET
Supplier Device Package: PG-IQFN-38-1
Motor Type - Stepper: Bipolar
Motor Type - AC, DC: Brushless DC (BLDC)
Produkt ist nicht verfügbar
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AIKB15N65DH5ATMA1 AIKB15N65DH5ATMA1 Infineon Technologies Infineon-Semiconductor_solutions_for_hybrid_electric_and_electric_cars-ABR-v01_00-EN.pdf?fileId=5546d46269e1c019016a4a76250c4ab4 Description: IGBT NPT 650V 15A TO263-3-2
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Input Type: Standard
Supplier Device Package: PG-TO263-3-2
IGBT Type: NPT
Part Status: Not For New Designs
Current - Collector (Ic) (Max): 15 A
Voltage - Collector Emitter Breakdown (Max): 650 V
auf Bestellung 2000 Stücke:
Lieferzeit 10-14 Tag (e)
1000+2.6 EUR
Mindestbestellmenge: 1000
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IMW65R048M1HXKSA1 Infineon-IMW65R048M1H-DataSheet-v02_00-EN.pdf?fileId=5546d4626f229553016f85b4a66c0466
IMW65R048M1HXKSA1
Hersteller: Infineon Technologies
Description: MOSFET 650V NCH SIC TRENCH
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 39A (Tc)
Rds On (Max) @ Id, Vgs: 64mOhm @ 20.1A, 18V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 5.7V @ 6mA
Supplier Device Package: PG-TO247-3-41
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +23V, -5V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1118 pF @ 400 V
auf Bestellung 734 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+13.59 EUR
30+7.98 EUR
120+6.75 EUR
510+6.28 EUR
Mindestbestellmenge: 2
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IPS60R600PFD7SAKMA1 Infineon-IPS60R600PFD7S-DataSheet-v02_00-EN.pdf?fileId=5546d4626df6ee62016e2294e27e6797
IPS60R600PFD7SAKMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 650V 6A TO251-3
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 1.7A, 10V
Power Dissipation (Max): 31W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 80µA
Supplier Device Package: PG-TO251-3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 8.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 344 pF @ 400 V
Produkt ist nicht verfügbar
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IPD60R280PFD7SAUMA1 Infineon-IPD60R280PFD7S-DataSheet-v02_00-EN.pdf?fileId=5546d4626df6ee62016e22702a14674d
IPD60R280PFD7SAUMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 600V 12A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 3.6A, 10V
Power Dissipation (Max): 51W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 180µA
Supplier Device Package: PG-TO252-3-344
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 15.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 656 pF @ 400 V
Produkt ist nicht verfügbar
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IMW65R107M1HXKSA1 Infineon-IMW65R107M1H-DataSheet-v02_00-EN.pdf?fileId=5546d4626f229553016f85d01cd50485
IMW65R107M1HXKSA1
Hersteller: Infineon Technologies
Description: MOSFET 650V NCH SIC TRENCH
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 142mOhm @ 8.9A, 18V
Power Dissipation (Max): 75W (Tc)
Vgs(th) (Max) @ Id: 5.7V @ 3mA
Supplier Device Package: PG-TO247-3-41
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +23V, -5V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 496 pF @ 400 V
auf Bestellung 261 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+9.64 EUR
30+5.51 EUR
120+4.6 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
IPS60R1K0PFD7SAKMA1 Infineon-IPS60R1K0PFD7S-DataSheet-v02_00-EN.pdf?fileId=5546d4626df6ee62016e2282a4c8675c
IPS60R1K0PFD7SAKMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 650V 4.7A TO251-3
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.7A (Tc)
Rds On (Max) @ Id, Vgs: 1Ohm @ 1A, 10V
Power Dissipation (Max): 26W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 50µA
Supplier Device Package: PG-TO251-3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 230 pF @ 400 V
Produkt ist nicht verfügbar
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IMZA65R072M1HXKSA1 Infineon-IMZA65R072M1H-DataSheet-v02_00-EN.pdf?fileId=5546d4626f229553016f85e97cf305b9
IMZA65R072M1HXKSA1
Hersteller: Infineon Technologies
Description: MOSFET 650V NCH SIC TRENCH
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
Rds On (Max) @ Id, Vgs: 94mOhm @ 13.3A, 18V
Power Dissipation (Max): 96W (Tc)
Vgs(th) (Max) @ Id: 5.7V @ 4mA
Supplier Device Package: PG-TO247-4-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +23V, -5V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 744 pF @ 400 V
auf Bestellung 169 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+12.64 EUR
30+7.28 EUR
120+6.17 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
IMW65R027M1HXKSA1 Infineon-IMW65R027M1H-DataSheet-v02_00-EN.pdf?fileId=5546d4626f229553016f85ab88170463
IMW65R027M1HXKSA1
Hersteller: Infineon Technologies
Description: MOSFET 650V NCH SIC TRENCH
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 47A (Tc)
Rds On (Max) @ Id, Vgs: 34mOhm @ 38.3A, 18V
Power Dissipation (Max): 189W (Tc)
Vgs(th) (Max) @ Id: 5.7V @ 11mA
Supplier Device Package: PG-TO247-3-41
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +23V, -5V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 2131 pF @ 400 V
auf Bestellung 1016 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+19.34 EUR
30+11.72 EUR
120+10.05 EUR
510+9.98 EUR
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IPAN60R125PFD7SXKSA1 Infineon-IPAN60R125PFD7S-DataSheet-v02_01-EN.pdf?fileId=5546d4626df6ee62016e224bf53a667c
IPAN60R125PFD7SXKSA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 650V 25A TO220
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Rds On (Max) @ Id, Vgs: 125mOhm @ 7.8A, 10V
Power Dissipation (Max): 32W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 390µA
Supplier Device Package: PG-TO220-FP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1503 pF @ 400 V
auf Bestellung 1163 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+4.61 EUR
50+2.29 EUR
100+2.07 EUR
500+1.68 EUR
1000+1.55 EUR
Mindestbestellmenge: 4
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IPP60R022S7XKSA1 Infineon-IPP60R022S7-DataSheet-v02_01-EN.pdf?fileId=5546d4626bb628d7016bc25d1085779d
IPP60R022S7XKSA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 600V 23A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 23A (Tc)
Rds On (Max) @ Id, Vgs: 22mOhm @ 23A, 12V
Power Dissipation (Max): 390W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1.44mA
Supplier Device Package: PG-TO220-3-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 12 V
Input Capacitance (Ciss) (Max) @ Vds: 5639 pF @ 300 V
auf Bestellung 1227 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+15.05 EUR
50+8.37 EUR
100+7.72 EUR
500+7.18 EUR
Mindestbestellmenge: 2
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IPD60R360PFD7SAUMA1 Infineon-IPD60R360PFD7S-DataSheet-v02_00-EN.pdf?fileId=5546d4626df6ee62016e227958cc6750
IPD60R360PFD7SAUMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 600V 10A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 360mOhm @ 2.9A, 10V
Power Dissipation (Max): 43W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 140µA
Supplier Device Package: PG-TO252-3-344
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 12.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 534 pF @ 400 V
Produkt ist nicht verfügbar
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IPN60R2K0PFD7SATMA1 Infineon-IPN60R2K0PFD7S-DataSheet-v02_00-EN.pdf?fileId=5546d4626df6ee62016e22827e126756
IPN60R2K0PFD7SATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 600V 3A SOT223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-3
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
Rds On (Max) @ Id, Vgs: 2Ohm @ 500mA, 10V
Power Dissipation (Max): 6W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 30µA
Supplier Device Package: PG-SOT223-3-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 3.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 134 pF @ 400 V
auf Bestellung 15000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.29 EUR
6000+0.27 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
IPS60R360PFD7SAKMA1 Infineon-IPS60R360PFD7S-DataSheet-v02_00-EN.pdf?fileId=5546d4626df6ee62016e2294ceeb6794
IPS60R360PFD7SAKMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 650V 10A TO251-3
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 360mOhm @ 2.9A, 10V
Power Dissipation (Max): 43W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 140µA
Supplier Device Package: PG-TO251-3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 12.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 534 pF @ 400 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPN60R360PFD7SATMA1 Infineon-IPN60R360PFD7S-DataSheet-v02_00-EN.pdf?fileId=5546d4626df6ee62016e228292226759
IPN60R360PFD7SATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 600V 10A SOT223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-3
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 360mOhm @ 2.9A, 10V
Power Dissipation (Max): 7W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 140µA
Supplier Device Package: PG-SOT223-3-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 12.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 534 pF @ 400 V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.58 EUR
Mindestbestellmenge: 3000
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IMZA65R107M1HXKSA1 Infineon-IMZA65R107M1H-DataSheet-v02_00-EN.pdf?fileId=5546d4626f229553016f859930890460
IMZA65R107M1HXKSA1
Hersteller: Infineon Technologies
Description: MOSFET 650V NCH SIC TRENCH
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 142mOhm @ 8.9A, 18V
Power Dissipation (Max): 75W (Tc)
Vgs(th) (Max) @ Id: 5.7V @ 3mA
Supplier Device Package: PG-TO247-3-41
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +23V, -5V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 496 pF @ 400 V
auf Bestellung 102 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+9.77 EUR
30+5.59 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
IPS60R210PFD7SAKMA1 Infineon-IPS60R210PFD7S-DataSheet-v02_00-EN.pdf?fileId=5546d4626df6ee62016e228bcd866791
IPS60R210PFD7SAKMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 650V 16A TO251-3
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Rds On (Max) @ Id, Vgs: 210mOhm @ 4.9A, 10V
Power Dissipation (Max): 64W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 240µA
Supplier Device Package: PG-TO251-3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1015 pF @ 400 V
Produkt ist nicht verfügbar
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IPT60R065S7XTMA1 Infineon-IPT60R065S7-DataSheet-v02_01-EN.pdf?fileId=5546d4626bb628d7016bc253e7b6779a
IPT60R065S7XTMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 600V 8A 8HSOF
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 65mOhm @ 8A, 12V
Power Dissipation (Max): 167W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 490µA
Supplier Device Package: PG-HSOF-8-2
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 12 V
Input Capacitance (Ciss) (Max) @ Vds: 1932 pF @ 300 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IMZA65R027M1HXKSA1 Infineon-IMZA65R027M1H-DataSheet-v02_00-EN.pdf?fileId=5546d4626f229553016f85d997f90532
IMZA65R027M1HXKSA1
Hersteller: Infineon Technologies
Description: MOSFET 650V NCH SIC TRENCH
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 59A (Tc)
Rds On (Max) @ Id, Vgs: 34mOhm @ 38.3A, 18V
Power Dissipation (Max): 189W (Tc)
Vgs(th) (Max) @ Id: 5.7V @ 11mA
Supplier Device Package: PG-TO247-4-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +23V, -5V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 2131 pF @ 400 V
auf Bestellung 266 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+25.56 EUR
30+15.75 EUR
120+13.99 EUR
Im Einkaufswagen  Stück im Wert von  UAH
IPN60R360PFD7SATMA1 Infineon-IPN60R360PFD7S-DataSheet-v02_00-EN.pdf?fileId=5546d4626df6ee62016e228292226759
IPN60R360PFD7SATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 600V 10A SOT223
Packaging: Cut Tape (CT)
Package / Case: TO-261-3
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 360mOhm @ 2.9A, 10V
Power Dissipation (Max): 7W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 140µA
Supplier Device Package: PG-SOT223-3-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 12.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 534 pF @ 400 V
auf Bestellung 3054 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
8+2.29 EUR
13+1.44 EUR
100+0.96 EUR
500+0.75 EUR
1000+0.68 EUR
Mindestbestellmenge: 8
Im Einkaufswagen  Stück im Wert von  UAH
IPD60R360PFD7SAUMA1 Infineon-IPD60R360PFD7S-DataSheet-v02_00-EN.pdf?fileId=5546d4626df6ee62016e227958cc6750
IPD60R360PFD7SAUMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 600V 10A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 360mOhm @ 2.9A, 10V
Power Dissipation (Max): 43W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 140µA
Supplier Device Package: PG-TO252-3-344
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 12.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 534 pF @ 400 V
auf Bestellung 2161 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
8+2.39 EUR
12+1.52 EUR
100+1.02 EUR
500+0.8 EUR
1000+0.73 EUR
Mindestbestellmenge: 8
Im Einkaufswagen  Stück im Wert von  UAH
IPT60R065S7XTMA1 Infineon-IPT60R065S7-DataSheet-v02_01-EN.pdf?fileId=5546d4626bb628d7016bc253e7b6779a
IPT60R065S7XTMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 600V 8A 8HSOF
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 65mOhm @ 8A, 12V
Power Dissipation (Max): 167W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 490µA
Supplier Device Package: PG-HSOF-8-2
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 12 V
Input Capacitance (Ciss) (Max) @ Vds: 1932 pF @ 300 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPD60R280PFD7SAUMA1 Infineon-IPD60R280PFD7S-DataSheet-v02_00-EN.pdf?fileId=5546d4626df6ee62016e22702a14674d
IPD60R280PFD7SAUMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 600V 12A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 3.6A, 10V
Power Dissipation (Max): 51W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 180µA
Supplier Device Package: PG-TO252-3-344
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 15.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 656 pF @ 400 V
auf Bestellung 2876 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
7+2.83 EUR
10+1.9 EUR
100+1.33 EUR
500+1.08 EUR
1000+0.98 EUR
Mindestbestellmenge: 7
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IPN60R2K0PFD7SATMA1 Infineon-IPN60R2K0PFD7S-DataSheet-v02_00-EN.pdf?fileId=5546d4626df6ee62016e22827e126756
IPN60R2K0PFD7SATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 600V 3A SOT223
Packaging: Cut Tape (CT)
Package / Case: TO-261-3
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
Rds On (Max) @ Id, Vgs: 2Ohm @ 500mA, 10V
Power Dissipation (Max): 6W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 30µA
Supplier Device Package: PG-SOT223-3-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 3.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 134 pF @ 400 V
auf Bestellung 15079 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
16+1.11 EUR
23+0.8 EUR
100+0.54 EUR
500+0.44 EUR
1000+0.4 EUR
Mindestbestellmenge: 16
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FR900R12IP4DBPSA1 Infineon-FR900R12IP4D-DataSheet-v03_00-EN.pdf?fileId=5546d4626c1f3dc3016cae709c2a37eb
FR900R12IP4DBPSA1
Hersteller: Infineon Technologies
Description: IGBT MODULE PP IHM I XHP 1 7KV
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Dual Brake Chopper
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 900A
NTC Thermistor: Yes
Supplier Device Package: AG-PRIME3-1
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 900 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 54 nF @ 25 V
auf Bestellung 2 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+1858.37 EUR
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IDK20G120C5XTMA1 Infineon-IDK20G120C5-DataSheet-v02_01-EN.pdf?fileId=5546d4626df6ee62016e3bf103270f47
IDK20G120C5XTMA1
Hersteller: Infineon Technologies
Description: DIODE SIC 1.2KV 56A PGTO26321
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 1050pF @ 1V, 1MHz
Current - Average Rectified (Io): 56A
Supplier Device Package: PG-TO263-2-1
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 20 A
Current - Reverse Leakage @ Vr: 123 µA @ 1200 V
Reverse Recovery Time (trr): 0 ns
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1000+5.56 EUR
Mindestbestellmenge: 1000
Im Einkaufswagen  Stück im Wert von  UAH
IDK20G120C5XTMA1 Infineon-IDK20G120C5-DataSheet-v02_01-EN.pdf?fileId=5546d4626df6ee62016e3bf103270f47
IDK20G120C5XTMA1
Hersteller: Infineon Technologies
Description: DIODE SIC 1.2KV 56A PGTO26321
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 1050pF @ 1V, 1MHz
Current - Average Rectified (Io): 56A
Supplier Device Package: PG-TO263-2-1
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 20 A
Current - Reverse Leakage @ Vr: 123 µA @ 1200 V
Reverse Recovery Time (trr): 0 ns
auf Bestellung 1193 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+11.26 EUR
10+6.99 EUR
100+6.71 EUR
Mindestbestellmenge: 2
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F3L200R07W2S5FB11BOMA1 Infineon-F3L200R07W2S5F_B11-DataSheet-v03_00-EN.pdf?fileId=5546d46272e49d2a01734dfbd7647113
F3L200R07W2S5FB11BOMA1
Hersteller: Infineon Technologies
Description: IGBT MODULE 650V 95A AG-EASY2B
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Level Inverter
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.38V @ 15V, 100A
NTC Thermistor: Yes
Supplier Device Package: AG-EASY2B
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 95 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 14.3 nF @ 25 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
FS3L40R07W2H5FB11BOMA1 Infineon-FS3L40R07W2H5F_B11-DataSheet-v03_00-EN.pdf?fileId=5546d4626c1f3dc3016c850552697db5
FS3L40R07W2H5FB11BOMA1
Hersteller: Infineon Technologies
Description: IGBT MODULE LOW POWER EASY
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.81V @ 15V, 20A
NTC Thermistor: Yes
Supplier Device Package: AG-EASY2B-2
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 18 µA
Input Capacitance (Cies) @ Vce: 2 nF @ 25 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
FP10R12W1T7B3BOMA1 Infineon-FP10R12W1T7_B3-DataSheet-v00_10-EN.pdf?fileId=5546d46270c4f93e0170f1856f6372d4
FP10R12W1T7B3BOMA1
Hersteller: Infineon Technologies
Description: IGBT MODULE LOW POWER EASY
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Three Phase Bridge Rectifier
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.6V @ 15V, 10A (Typ)
NTC Thermistor: Yes
Supplier Device Package: AG-EASY1B-2
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 4.5 µA
Input Capacitance (Cies) @ Vce: 1.89 nF @ 25 V
auf Bestellung 11 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+63.73 EUR
Im Einkaufswagen  Stück im Wert von  UAH
DF150R12W1H3FB11BOMA1
DF150R12W1H3FB11BOMA1
Hersteller: Infineon Technologies
Description: IGBT MODULE LOW POWER EASY
auf Bestellung 24 Stücke:
Lieferzeit 10-14 Tag (e)
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1ED44175N01BXTSA1 Infineon-1ED44175N01B-DataSheet-v01_00-EN.pdf?fileId=5546d4626df6ee62016e3bf0b3230f35
1ED44175N01BXTSA1
Hersteller: Infineon Technologies
Description: IC GATE DRVR LOW-SIDE SOT23-6
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 12.7V ~ 20V
Input Type: Non-Inverting
Supplier Device Package: PG-SOT23-6-3
Rise / Fall Time (Typ): 5ns, 5ns
Channel Type: Single
Driven Configuration: Low-Side
Number of Drivers: 1
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 1.2V, 1.9V
Current - Peak Output (Source, Sink): 2.6A, 2.6A
Part Status: Active
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IM240S6Y1BAKMA1 Infineon-IM240-DataSheet-v02_03-EN.pdf?fileId=5546d4626fc1ce0b016ff190f50445ea
IM240S6Y1BAKMA1
Hersteller: Infineon Technologies
Description: CIPOS MICRO
auf Bestellung 235 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+16.26 EUR
10+14.69 EUR
25+14 EUR
100+12.16 EUR
Mindestbestellmenge: 2
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FS50R12W1T7B11BOMA1 Infineon-FS50R12W1T7_B11-DataSheet-v02_00-EN.pdf?fileId=5546d46270c4f93e0170f18717047301
FS50R12W1T7B11BOMA1
Hersteller: Infineon Technologies
Description: IGBT MODULE LOW POWER EASY
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 175°C
NTC Thermistor: No
Supplier Device Package: Module
Part Status: Active
Current - Collector (Ic) (Max): 50 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Cutoff (Max): 7.9 µA
Input Capacitance (Cies) @ Vce: 11.1 nF @ 25 V
auf Bestellung 48 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+76.86 EUR
24+54.7 EUR
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1ED44175N01BXTSA1 Infineon-1ED44175N01B-DataSheet-v01_00-EN.pdf?fileId=5546d4626df6ee62016e3bf0b3230f35
1ED44175N01BXTSA1
Hersteller: Infineon Technologies
Description: IC GATE DRVR LOW-SIDE SOT23-6
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 12.7V ~ 20V
Input Type: Non-Inverting
Supplier Device Package: PG-SOT23-6-3
Rise / Fall Time (Typ): 5ns, 5ns
Channel Type: Single
Driven Configuration: Low-Side
Number of Drivers: 1
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 1.2V, 1.9V
Current - Peak Output (Source, Sink): 2.6A, 2.6A
Part Status: Active
DigiKey Programmable: Not Verified
auf Bestellung 1482 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
16+1.14 EUR
22+0.81 EUR
25+0.73 EUR
100+0.64 EUR
250+0.6 EUR
500+0.57 EUR
1000+0.55 EUR
Mindestbestellmenge: 16
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TLE4929CXVAM18NAHAMA1 Infineon-TLE4929C-DataSheet-v01_10-EN.pdf?fileId=5546d46265257de8016537ce85935e53
TLE4929CXVAM18NAHAMA1
Hersteller: Infineon Technologies
Description: IC SPEED SENSOR SSO-3
Packaging: Tape & Box (TB)
Features: Programmable, Temperature Compensated
Package / Case: 3-SIP Module
Output Type: Open Drain
Mounting Type: Through Hole
Axis: Single
Operating Temperature: -40°C ~ 175°C (TJ)
Voltage - Supply: 4V ~ 16V
Technology: Hall Effect
Resolution: 16 b
Sensing Range: ±120mT
Current - Output (Max): 15mA
Current - Supply (Max): 13.4mA
Supplier Device Package: PG-SSO-3-52
Grade: Automotive
Qualification: AEC-Q100
auf Bestellung 1500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1500+4.56 EUR
Mindestbestellmenge: 1500
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BSC0923NDIATMA1 Infineon-BSC0923NDI-DS-v02_00-en.pdf?fileId=db3a304336ca04c90136caa90c9e00b6
BSC0923NDIATMA1
Hersteller: Infineon Technologies
Description: MOSFET 2N-CH 30V 17A/32A TISON8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Asymmetrical
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 17A, 32A
Input Capacitance (Ciss) (Max) @ Vds: 1160pF @ 15V
Rds On (Max) @ Id, Vgs: 5mOhm @ 20A, 10V
Gate Charge (Qg) (Max) @ Vgs: 10nC @ 4.5V
FET Feature: Logic Level Gate, 4.5V Drive
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TISON-8
Part Status: Active
auf Bestellung 3949 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
7+2.87 EUR
10+1.82 EUR
100+1.22 EUR
500+0.97 EUR
1000+0.88 EUR
2000+0.81 EUR
Mindestbestellmenge: 7
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BSZ013NE2LS5IATMA1 Infineon-BSZ013NE2LS5I-DS-v02_00-EN.pdf?fileId=5546d4624f205c9a014f6030a74c7cc5
BSZ013NE2LS5IATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 25V 32A/40A TSDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 32A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs: 1.3mOhm @ 20A, 10V
Power Dissipation (Max): 2.1W (Ta), 69W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TSDSON-8-FL
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3400 pF @ 12 V
auf Bestellung 32870 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
6+3.34 EUR
10+2.14 EUR
100+1.45 EUR
500+1.16 EUR
1000+1.11 EUR
Mindestbestellmenge: 6
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IRF9383MTRPBF irf9383mpbf.pdf?fileId=5546d462533600a40153561169a11dab
IRF9383MTRPBF
Hersteller: Infineon Technologies
Description: MOSFET P-CH 30V 22A DIRECTFET
Packaging: Cut Tape (CT)
Package / Case: DirectFET™ Isometric MX
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 160A (Tc)
Rds On (Max) @ Id, Vgs: 2.9mOhm @ 22A, 10V
Power Dissipation (Max): 2.1W (Ta), 113W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 150µA
Supplier Device Package: DIRECTFET™ MX
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7305 pF @ 15 V
Produkt ist nicht verfügbar
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BSL202SNH6327XTSA1 Infineon-BSL202SN-DS-v02_00-en.pdf?fileId=db3a3043156fd573011622e191d41f68
BSL202SNH6327XTSA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 20V 7.5A TSOP-6
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.5A (Ta)
Rds On (Max) @ Id, Vgs: 22mOhm @ 7.5A, 4.5V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 1.2V @ 30µA
Supplier Device Package: PG-TSOP6-6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 8.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1147 pF @ 10 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 177 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
14+1.32 EUR
22+0.82 EUR
100+0.53 EUR
Mindestbestellmenge: 14
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BSS169H6906XTSA1 INFNS19228-1.pdf?t.download=true&u=5oefqw
BSS169H6906XTSA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 100V 170MA SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel, Depletion Mode
Current - Continuous Drain (Id) @ 25°C: 170mA (Ta)
Rds On (Max) @ Id, Vgs: 6Ohm @ 170mA, 10V
Power Dissipation (Max): 360mW (Ta)
Vgs(th) (Max) @ Id: 1.8V @ 50µA
Supplier Device Package: PG-SOT23
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 0V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 2.8 nC @ 7 V
Input Capacitance (Ciss) (Max) @ Vds: 68 pF @ 10 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 43881 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
10+1.83 EUR
16+1.14 EUR
100+0.75 EUR
500+0.58 EUR
1000+0.52 EUR
Mindestbestellmenge: 10
Im Einkaufswagen  Stück im Wert von  UAH
IRFH5302DTRPBF irfh5302dpbf.pdf?fileId=5546d462533600a40153561b4f5e1ec0
Hersteller: Infineon Technologies
Description: MOSFET N-CH 30V 29A/100A PQFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 29A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 2.5mOhm @ 50A, 10V
Power Dissipation (Max): 3.6W (Ta), 104W (Tc)
Vgs(th) (Max) @ Id: 2.35V @ 100µA
Supplier Device Package: PQFN (5x6) Single Die
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3635 pF @ 25 V
Produkt ist nicht verfügbar
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BSP135H6433XTMA1 Infineon-BSP135-DS-v01_33-en.pdf?fileId=db3a30433c1a8752013c1fd4c839399b
BSP135H6433XTMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 600V 120MA SOT223
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel, Depletion Mode
Current - Continuous Drain (Id) @ 25°C: 120mA (Ta)
Rds On (Max) @ Id, Vgs: 45Ohm @ 120mA, 10V
Power Dissipation (Max): 1.8W (Ta)
Vgs(th) (Max) @ Id: 1V @ 94µA
Supplier Device Package: SOT-223
Part Status: Last Time Buy
Drive Voltage (Max Rds On, Min Rds On): 0V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 4.9 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 146 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 6092 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
6+3.04 EUR
10+1.94 EUR
100+1.31 EUR
500+1.05 EUR
1000+0.96 EUR
2000+0.89 EUR
Mindestbestellmenge: 6
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BSC015NE2LS5IATMA1 Infineon-BSC015NE2LS5I-DS-v02_00-EN.pdf?fileId=5546d4624f205c9a014f3bdacb5c1b44
BSC015NE2LS5IATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 25V 33A/100A TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 33A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 1.5mOhm @ 30A, 10V
Power Dissipation (Max): 2.5W (Ta), 50W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TDSON-8-6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 12 V
auf Bestellung 11019 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
7+2.73 EUR
11+1.73 EUR
100+1.16 EUR
500+0.92 EUR
1000+0.84 EUR
Mindestbestellmenge: 7
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BSZ215CHXTMA1 Infineon-BSZ215C%20H-DS-v02_03-EN.pdf?fileId=5546d46250cc1fdf015133809974350a
BSZ215CHXTMA1
Hersteller: Infineon Technologies
Description: MOSFET N/P-CH 20V 5.1A 8TSDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: N and P-Channel Complementary
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.5W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 5.1A, 3.2A
Input Capacitance (Ciss) (Max) @ Vds: 419pF @ 10V
Rds On (Max) @ Id, Vgs: 55mOhm @ 5.1A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 2.8nC @ 4.5V
FET Feature: Logic Level Gate, 2.5V Drive
Vgs(th) (Max) @ Id: 1.4V @ 110µA
Supplier Device Package: PG-TSDSON-8
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 5463 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
6+3.04 EUR
10+1.94 EUR
100+1.3 EUR
500+1.04 EUR
1000+0.97 EUR
Mindestbestellmenge: 6
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IRF9332TRPBF irf9332pbf.pdf?fileId=5546d462533600a40153561136b71d9f
IRF9332TRPBF
Hersteller: Infineon Technologies
Description: MOSFET P-CH 30V 9.8A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 9.8A (Ta)
Rds On (Max) @ Id, Vgs: 17.5mOhm @ 9.8A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 2.4V @ 25µA
Supplier Device Package: 8-SO
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1270 pF @ 25 V
Produkt ist nicht verfügbar
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BSP135H6906XTSA1 Infineon-BSP135-DS-v01_33-en.pdf?fileId=db3a30433c1a8752013c1fd4c839399b
BSP135H6906XTSA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 600V 120MA SOT223-4
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel, Depletion Mode
Current - Continuous Drain (Id) @ 25°C: 120mA (Ta)
Rds On (Max) @ Id, Vgs: 45Ohm @ 120mA, 10V
Power Dissipation (Max): 1.8W (Ta)
Vgs(th) (Max) @ Id: 1V @ 94µA
Supplier Device Package: PG-SOT223-4
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 0V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 4.9 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 146 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 13414 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5+3.56 EUR
10+2.28 EUR
100+1.56 EUR
500+1.24 EUR
Mindestbestellmenge: 5
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BSZ014NE2LS5IFATMA1 Infineon-BSZ014NE2LS5IF-DS-v02_01-EN.pdf?fileId=5546d4624cb7f111014d000b50402513
BSZ014NE2LS5IFATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 25V 31A/40A TSDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 31A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs: 1.45mOhm @ 20A, 10V
FET Feature: Schottky Diode (Body)
Power Dissipation (Max): 2.1W (Ta), 69W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TSDSON-8-FL
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2300 pF @ 12 V
auf Bestellung 40949 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5+3.63 EUR
10+2.33 EUR
100+1.59 EUR
500+1.27 EUR
1000+1.24 EUR
Mindestbestellmenge: 5
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IPB60R280CFD7ATMA1 Infineon-IPB60R280CFD7-DataSheet-v02_00-EN.pdf?fileId=5546d4626b2d8e69016bb2a0d76e1ac5
IPB60R280CFD7ATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 600V 9A TO263-3-2
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 3.6A, 10V
Power Dissipation (Max): 51W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 180µA
Supplier Device Package: PG-TO263-3-2
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 807 pF @ 400 V
Produkt ist nicht verfügbar
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ESD106B1W0201E6327XTSA1 Infineon-ESD106-B1-W0201-DataSheet-v02_00-EN.pdf?fileId=5546d4626cb27db2016cb48375972ca5
ESD106B1W0201E6327XTSA1
Hersteller: Infineon Technologies
Description: TVS DIODE 5.5VWM 10VC PGWLL23
Packaging: Tape & Reel (TR)
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C (TA)
Applications: RF Antenna
Capacitance @ Frequency: 0.13pF @ 2.5GHz
Current - Peak Pulse (10/1000µs): 1.5A (8/20µs)
Voltage - Reverse Standoff (Typ): 5.5V (Max)
Supplier Device Package: PG-WLL-2-3
Bidirectional Channels: 1
Voltage - Breakdown (Min): 6.1V
Voltage - Clamping (Max) @ Ipp: 10V (Typ)
Power - Peak Pulse: 15W
Power Line Protection: No
Part Status: Active
auf Bestellung 60000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
15000+0.039 EUR
45000+0.036 EUR
Mindestbestellmenge: 15000
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BSC037N08NS5TATMA1 Infineon-BSC037N08NS5T-DataSheet-v02_01-EN.pdf?fileId=5546d4626bb628d7016bd24725382f23
BSC037N08NS5TATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 80V 22A/100A TDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 3.7mOhm @ 50A, 10V
Power Dissipation (Max): 3W (Ta), 136W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 72µA
Supplier Device Package: PG-TDSON-8-7
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4200 pF @ 40 V
Produkt ist nicht verfügbar
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BSC155N06NDATMA1 Infineon-BSC155N06ND-DS-v02_00-EN.pdf?fileId=5546d462689a790c016905fc90d60cec
BSC155N06NDATMA1
Hersteller: Infineon Technologies
Description: MOSFET 2N-CH 60V 20A 8TDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 50W (Tc)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 2250pF @ 30V
Rds On (Max) @ Id, Vgs: 15.5mOhm @ 17A, 10V
Gate Charge (Qg) (Max) @ Vgs: 29nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 20µA
Supplier Device Package: PG-TDSON-8-4
Part Status: Active
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5000+0.77 EUR
Mindestbestellmenge: 5000
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TLE49662GHTSA1 Infineon-TLE4966-2G-DataSheet-v01_00-EN.pdf?fileId=5546d4626b2d8e69016b511123480c28
TLE49662GHTSA1
Hersteller: Infineon Technologies
Description: MAG SWITCH SPEC PURP TSOP6-6-9
Packaging: Tape & Reel (TR)
Features: Temperature Compensated
Package / Case: SOT-23-6 Thin, TSOT-23-6
Output Type: Digital
Polarization: Either
Mounting Type: Surface Mount
Function: Special Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 2.7V ~ 18V
Technology: Hall Effect
Sensing Range: 10mT Trip, -10mT Release
Current - Output (Max): 10mA
Current - Supply (Max): 7mA
Supplier Device Package: PG-TSOP6-6-9
Test Condition: 25°C
Part Status: Active
Produkt ist nicht verfügbar
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AIGB40N65F5ATMA1 Infineon-Semiconductor_solutions_for_hybrid_electric_and_electric_cars-ABR-v01_00-EN.pdf?fileId=5546d46269e1c019016a4a76250c4ab4
AIGB40N65F5ATMA1
Hersteller: Infineon Technologies
Description: IGBT NPT 650V 40A TO263-3-2
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Input Type: Standard
Supplier Device Package: PG-TO263-3-2
IGBT Type: NPT
Part Status: Active
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TC389QP160F300SADLXUMA1 Infineon-TriCore_Family_BR-ProductBrochure-v01_00-EN.pdf?fileId=5546d4625d5945ed015dc81f47b436c7
TC389QP160F300SADLXUMA1
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 10MB FLASH 516FBGA
Packaging: Tape & Reel (TR)
Package / Case: 516-FBGA
Mounting Type: Surface Mount
Speed: 300MHz
Program Memory Size: 10MB (10M x 8)
RAM Size: 1.53K x 8
Operating Temperature: -40°C ~ 150°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: TriCore™
Core Size: 32-Bit Quad-Core
Voltage - Supply (Vcc/Vdd): 3.3V, 5V
Connectivity: ASC, CANbus, Ethernet, FlexRay, HSSL, I2C, LINbus, MSC, PSI, QSPI, SENT
Peripherals: DMA, I2S, PWM, WDT
Supplier Device Package: PG-FBGA-516-1
Part Status: Not For New Designs
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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IPL60R225CFD7AUMA1 Infineon-IPL60R225CFD7-DataSheet-v02_00-EN.pdf?fileId=5546d4626b2d8e69016bb2cea4ee2edd
IPL60R225CFD7AUMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 600V 12A VSON-4
Packaging: Tape & Reel (TR)
Package / Case: 4-PowerTSFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 225mOhm @ 4.9A, 10V
Power Dissipation (Max): 68W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 240µA
Supplier Device Package: PG-VSON-4-1
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1015 pF @ 400 V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+1.87 EUR
Mindestbestellmenge: 3000
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IPA600N25NM3SXKSA1 Infineon-IPA600N25NM3S-DataSheet-v02_01-EN.pdf?fileId=5546d4626cb27db2016d5d19624b6e3d
IPA600N25NM3SXKSA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 250V 15A TO220
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 60mOhm @ 15A, 10V
Power Dissipation (Max): 38W (Tc)
Vgs(th) (Max) @ Id: 4V @ 89µA
Supplier Device Package: PG-TO220 Full Pack
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2300 pF @ 100 V
auf Bestellung 140 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+5.24 EUR
50+2.64 EUR
100+2.39 EUR
Mindestbestellmenge: 4
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TC387QP160F300SADKXUMA1
TC387QP160F300SADKXUMA1
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 10MB FLASH 292LFBGA
Packaging: Tape & Reel (TR)
Package / Case: 292-LFBGA
Mounting Type: Surface Mount
Speed: 300MHz
Program Memory Size: 10MB (10M x 8)
RAM Size: 1.53K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: TriCore™
Core Size: 32-Bit Quad-Core
Voltage - Supply (Vcc/Vdd): 3.3V, 5V
Connectivity: ASC, CANbus, Ethernet, FlexRay, HSSL, I2C, LINbus, MSC, PSI, QSPI, SENT
Peripherals: DMA, I2S, PWM, WDT
Supplier Device Package: PG-LFBGA-292-11
Part Status: Obsolete
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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IPA60R160P7XKSA1 Infineon-IPA60R160P7-DS-v02_00-EN.pdf?fileId=5546d462696dbf120169b4543f6d483f
IPA60R160P7XKSA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 600V 20A TO220
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 160mOhm @ 6.3A, 10V
Power Dissipation (Max): 26W (Tc)
Vgs(th) (Max) @ Id: 4V @ 350µA
Supplier Device Package: PG-TO220 Full Pack
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1317 pF @ 400 V
auf Bestellung 144 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+5.58 EUR
50+2.81 EUR
100+2.54 EUR
Mindestbestellmenge: 4
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IPT019N08N5ATMA1 Infineon-IPT019N08N5-DataSheet-v02_00-EN.pdf?fileId=5546d46269e1c019016ac0292ba732e4
IPT019N08N5ATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 80V 32A/247A 8HSOF
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 32A (Ta), 247A (Tc)
Rds On (Max) @ Id, Vgs: 1.9mOhm @ 150A, 10V
Power Dissipation (Max): 231W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 159µA
Supplier Device Package: PG-HSOF-8-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 127 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9200 pF @ 40 V
auf Bestellung 2000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2000+3.35 EUR
Mindestbestellmenge: 2000
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IMM102T015MXUMA1 Infineon-IMM100T-DataSheet-v01_00-EN.pdf?fileId=5546d4626b2d8e69016b7012c7993b83
IMM102T015MXUMA1
Hersteller: Infineon Technologies
Description: IMOTION
Packaging: Tape & Reel (TR)
Package / Case: 38-PowerVQFN
Mounting Type: Surface Mount
Function: Driver
Current - Output: 4A
Interface: PWM
Operating Temperature: -40°C ~ 115°C (TJ)
Output Configuration: Half Bridge (3)
Voltage - Supply: 13.5V ~ 16.5V
Applications: General Purpose
Technology: Power MOSFET
Supplier Device Package: PG-IQFN-38-1
Motor Type - Stepper: Bipolar
Motor Type - AC, DC: Brushless DC (BLDC)
Produkt ist nicht verfügbar
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AIKB15N65DH5ATMA1 Infineon-Semiconductor_solutions_for_hybrid_electric_and_electric_cars-ABR-v01_00-EN.pdf?fileId=5546d46269e1c019016a4a76250c4ab4
AIKB15N65DH5ATMA1
Hersteller: Infineon Technologies
Description: IGBT NPT 650V 15A TO263-3-2
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Input Type: Standard
Supplier Device Package: PG-TO263-3-2
IGBT Type: NPT
Part Status: Not For New Designs
Current - Collector (Ic) (Max): 15 A
Voltage - Collector Emitter Breakdown (Max): 650 V
auf Bestellung 2000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1000+2.6 EUR
Mindestbestellmenge: 1000
Im Einkaufswagen  Stück im Wert von  UAH
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