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IPT029N08N5ATMA1 IPT029N08N5ATMA1 Infineon Technologies Infineon-IPT029N08N5-DS-v02_00-EN.pdf?fileId=5546d46258f240be0158f28c77120098 Description: MOSFET N-CH 80V 52A/169A HSOF-8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 52A (Ta), 169A (Tc)
Rds On (Max) @ Id, Vgs: 2.9mOhm @ 150A, 10V
Power Dissipation (Max): 168W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 108µA
Supplier Device Package: PG-HSOF-8-1
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 87 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6500 pF @ 40 V
Produkt ist nicht verfügbar
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KITLGPWRBOM004TOBO1 KITLGPWRBOM004TOBO1 Infineon Technologies Infineon-UserManual_LVDSPD_low_voltage_drives_scalable_power_demonstration_board-UM-v01_00-EN.pdf?fileId=5546d462696dbf120169b58bda49538e Description: EVAL POWER BOARD 60V
Packaging: Box
Function: Half H-Bridge Driver (Internal FET)
Type: Power Management
Supplied Contents: Board(s)
Part Status: Active
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KITLGPWRBOM005TOBO1 KITLGPWRBOM005TOBO1 Infineon Technologies Infineon-UserManual_LVDSPD_low_voltage_drives_scalable_power_demonstration_board-UM-v01_00-EN.pdf?fileId=5546d462696dbf120169b58bda49538e Description: EVAL POWER BOARD 100V
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KITLGPWRBOM006TOBO1 KITLGPWRBOM006TOBO1 Infineon Technologies Infineon-UserManual_LVDSPD_low_voltage_drives_scalable_power_demonstration_board-UM-v01_00-EN.pdf?fileId=5546d462696dbf120169b58bda49538e Description: EVAL POWER BOARD 150V
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KITLGPWRBOM008TOBO1 KITLGPWRBOM008TOBO1 Infineon Technologies Infineon-UserManual_LVDSPD_low_voltage_drives_scalable_power_demonstration_board-UM-v01_00-EN.pdf?fileId=5546d462696dbf120169b58bda49538e Description: EVAL POWER BOARD 250V
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SIPC10N65C3X1SA2 Infineon Technologies Description: MOSFET
Packaging: Bulk
Part Status: Active
Produkt ist nicht verfügbar
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SIPC10N65C3X1SA1 Infineon Technologies Description: MOSFET
Packaging: Bulk
Part Status: Obsolete
Produkt ist nicht verfügbar
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FF1000R17IE4S4BOSA2 Infineon Technologies Description: IGBT MOD 1700V 1390A AGPRIME3-1
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: 2 Independent
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.45V @ 15V, 1000A
NTC Thermistor: Yes
Supplier Device Package: AG-PRIME3-1
Current - Collector (Ic) (Max): 1390 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Power - Max: 6250 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 81 pF @ 25 V
Produkt ist nicht verfügbar
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FM24C04B-G2TR Infineon Technologies Description: IC FRAM 4KBIT I2C 1MHZ 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 4Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: FRAM (Ferroelectric RAM)
Clock Frequency: 1 MHz
Memory Format: FRAM
Supplier Device Package: 8-SOIC
Part Status: Obsolete
Memory Interface: I²C
Access Time: 550 ns
Memory Organization: 512 x 8
DigiKey Programmable: Not Verified
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IMW120R220M1HXKSA1 IMW120R220M1HXKSA1 Infineon Technologies Infineon-IMW120R220M1H-DS-v01_01-EN.pdf?fileId=5546d46269e1c019016a92fe078366a0 Description: SICFET N-CH 1.2KV 13A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
Rds On (Max) @ Id, Vgs: 286mOhm @ 4A, 18V
Power Dissipation (Max): 75W (Tc)
Vgs(th) (Max) @ Id: 5.7V @ 1.6mA
Supplier Device Package: PG-TO247-3-41
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 8.5 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 289 pF @ 800 V
auf Bestellung 787 Stücke:
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2+10.05 EUR
30+4.83 EUR
120+4.44 EUR
510+4.18 EUR
Mindestbestellmenge: 2
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IMW120R350M1HXKSA1 IMW120R350M1HXKSA1 Infineon Technologies Infineon-IMW120R350M1H-DS-v01_01-EN.pdf?fileId=5546d46269e1c019016a92fe1a0a66a3 Description: SICFET N-CH 1.2KV 4.7A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.7A (Tc)
Rds On (Max) @ Id, Vgs: 455mOhm @ 2A, 18V
Power Dissipation (Max): 60W (Tc)
Vgs(th) (Max) @ Id: 5.7V @ 1mA
Supplier Device Package: PG-TO247-3-41
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 5.3 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 182 pF @ 800 V
auf Bestellung 668 Stücke:
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2+9.40 EUR
30+5.29 EUR
120+4.43 EUR
510+3.78 EUR
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IMZ120R140M1HXKSA1 IMZ120R140M1HXKSA1 Infineon Technologies Infineon-IMZ120R140M1H-DS-v01_01-EN.pdf?fileId=5546d46269e1c019016a92fd9763668d Description: SICFET N-CH 1.2KV 19A TO247-4
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Tc)
Rds On (Max) @ Id, Vgs: 182mOhm @ 6A, 18V
Power Dissipation (Max): 94W (Tc)
Vgs(th) (Max) @ Id: 5.7V @ 2.5mA
Supplier Device Package: PG-TO247-4-1
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 454 pF @ 800 V
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2+12.57 EUR
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IMZ120R220M1HXKSA1 IMZ120R220M1HXKSA1 Infineon Technologies Infineon-IMZ120R220M1H-DS-v01_01-EN.pdf?fileId=5546d46269e1c019016a92fd8545668a Description: SICFET N-CH 1.2KV 13A TO247-4
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
Rds On (Max) @ Id, Vgs: 220mOhm @ 4A, 18V
Power Dissipation (Max): 75W (Tc)
Vgs(th) (Max) @ Id: 5.7V @ 1.6mA
Supplier Device Package: PG-TO247-4-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 8.5 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 289 pF @ 800 V
auf Bestellung 86 Stücke:
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2+11.05 EUR
30+6.21 EUR
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IMZ120R350M1HXKSA1 IMZ120R350M1HXKSA1 Infineon Technologies Infineon-IMZ120R350M1H-DS-v01_01-EN.pdf?fileId=5546d46269e1c019016a92fd75376687 Description: SICFET N-CH 1.2KV 4.7A TO247-4
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.7A (Tc)
Rds On (Max) @ Id, Vgs: 350mOhm @ 2A, 18V
Power Dissipation (Max): 60W (Tc)
Vgs(th) (Max) @ Id: 5.7V @ 1mA
Supplier Device Package: PG-TO247-4-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 5.3 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 182 pF @ 800 V
auf Bestellung 289 Stücke:
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2+10.30 EUR
30+5.73 EUR
120+4.91 EUR
Mindestbestellmenge: 2
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TLE5109A16DE2210XUMA1 TLE5109A16DE2210XUMA1 Infineon Technologies Infineon-TLE5x09A16_D-DS-v02_00-EN.pdf?fileId=5546d462696dbf12016977889fe858c9 Description: IC ANGLE SENSOR 5.0 V
Packaging: Cut Tape (CT)
Package / Case: 16-TSSOP (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Output: Analog Voltage
Termination Style: Gull Wing
Voltage - Supply: 5V
Linearity: ±0.1°
Actuator Type: External Magnet, Not Included
Technology: Magnetoresistive
For Measuring: Angle
Supplier Device Package: PG-TDSO-16-2
Rotation Angle - Electrical, Mechanical: 0° ~ 180°
Output Signal: Cosine, Sine
Grade: Automotive
Part Status: Active
Qualification: AEC-Q100
Produkt ist nicht verfügbar
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IAUA200N04S5N010AUMA1 IAUA200N04S5N010AUMA1 Infineon Technologies Infineon-IAUA200N04S5N010-DS-v01_10-EN.pdf?fileId=5546d462647040d101647051b3671ed1 Description: MOSFET N-CH 40V 200A 5HSOF
Packaging: Cut Tape (CT)
Package / Case: 5-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 200A (Tc)
Rds On (Max) @ Id, Vgs: 1mOhm @ 100A, 10V
Power Dissipation (Max): 167W (Tc)
Vgs(th) (Max) @ Id: 3.4V @ 100µA
Supplier Device Package: PG-HSOF-5-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 132 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7650 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 3486 Stücke:
Lieferzeit 10-14 Tag (e)
4+4.49 EUR
10+3.08 EUR
100+2.26 EUR
500+1.91 EUR
1000+1.77 EUR
Mindestbestellmenge: 4
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IPG20N04S4L07AATMA1 IPG20N04S4L07AATMA1 Infineon Technologies Infineon-IPG20N04S4L_07A-DS-v01_00-en.pdf?fileId=db3a30433d346a2d013d454a0c9d515c Description: MOSFET 2N-CH 40V 20A 8TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount, Wettable Flank
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 65W
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 20A
Input Capacitance (Ciss) (Max) @ Vds: 3980pF @ 25V
Rds On (Max) @ Id, Vgs: 7.2mOhm @ 17A, 10V
Gate Charge (Qg) (Max) @ Vgs: 50nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.2V @ 30µA
Supplier Device Package: PG-TDSON-8-10
Grade: Automotive
Qualification: AEC-Q101
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TLE5009A16DE1200XUMA1 TLE5009A16DE1200XUMA1 Infineon Technologies Infineon-TLE5x09A16_D-DS-v02_00-EN.pdf?fileId=5546d462696dbf12016977889fe858c9 Description: SENSOR ANGLE 360DEG SMD
Packaging: Cut Tape (CT)
Package / Case: 16-TSSOP (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Output: Analog Voltage
Operating Temperature: -40°C ~ 125°C
Termination Style: Gull Wing
Voltage - Supply: 3V ~ 3.6V
Actuator Type: External Magnet, Not Included
Technology: Magnetoresistive
For Measuring: Angle
Supplier Device Package: PG-TDSO-16
Rotation Angle - Electrical, Mechanical: 0° ~ 360°, Continuous
Output Signal: Cosine, Sine
Part Status: Active
Grade: Automotive
Qualification: AEC-Q100
Produkt ist nicht verfügbar
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TLE5009A16DE1210XUMA1 TLE5009A16DE1210XUMA1 Infineon Technologies Infineon-TLE5x09A16_D-DS-v02_00-EN.pdf?fileId=5546d462696dbf12016977889fe858c9 Description: SENSOR ANGLE 360DEG SMD
Packaging: Cut Tape (CT)
Package / Case: 16-TSSOP (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Output: Analog Voltage
Operating Temperature: -40°C ~ 125°C
Termination Style: Gull Wing
Voltage - Supply: 3V ~ 3.6V
Actuator Type: External Magnet, Not Included
Technology: Magnetoresistive
For Measuring: Angle
Supplier Device Package: PG-TDSO-16
Rotation Angle - Electrical, Mechanical: 0° ~ 360°, Continuous
Output Signal: Cosine, Sine
Part Status: Active
Grade: Automotive
Qualification: AEC-Q100
auf Bestellung 6931 Stücke:
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3+8.40 EUR
5+7.55 EUR
10+7.23 EUR
25+6.85 EUR
50+6.60 EUR
100+6.36 EUR
500+5.97 EUR
Mindestbestellmenge: 3
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EVALNLM0011DCTOBO1 EVALNLM0011DCTOBO1 Infineon Technologies Infineon-Datasheet_NLM001x-DataSheet-v02_00-EN.pdf?fileId=5546d4626c1f3dc3016c8aec20e81011 Description: EVAL KIT NLM0011 W/O NFC READER
Packaging: Bulk
For Use With/Related Products: NLM0011
Frequency: 13.56MHz
Type: Near Field Communication (NFC)
Supplied Contents: Board(s)
auf Bestellung 4 Stücke:
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1+44.44 EUR
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BTF60702ERVXUMA1 BTF60702ERVXUMA1 Infineon Technologies Infineon-%20Infineon-BTF6070-2ERV-DS-v01_00-EN-DataSheet-v01_00-EN.pdf?fileId=5546d4626cb27db2016d5e7e6e8c0667 Description: IC SWTCH HISIDE SMRT
Packaging: Tape & Reel (TR)
Package / Case: 14-SOIC (0.154", 3.90mm Width) Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 2
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 120mOhm
Input Type: Non-Inverting
Voltage - Load: 5 ~ 36V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 2.3A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-TDSO-14-21
Fault Protection: Open Load Detect, Over Temperature, Over Voltage
Grade: Automotive
Part Status: Active
Qualification: AEC-Q100
auf Bestellung 6000 Stücke:
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3000+3.11 EUR
Mindestbestellmenge: 3000
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111-3046PBF Infineon Technologies Description: IC REGULATOR SMD
Packaging: Tube
Part Status: Obsolete
Produkt ist nicht verfügbar
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IR3565BMFC04TRP Infineon Technologies Description: IC DC/DC MULTIPHASE CTLR
Produkt ist nicht verfügbar
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IR3565BMFS08TRP Infineon Technologies Description: IC DC/DC MULTIPHASE CTLR
Packaging: Tube
Produkt ist nicht verfügbar
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111-4143BPBF Infineon Technologies Description: IC REGULATOR CTLR SMD
Produkt ist nicht verfügbar
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IR3596MMT05TRP Infineon Technologies Description: IC DC/DC MULTIPHASE CTLR
Produkt ist nicht verfügbar
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111-4144PBF Infineon Technologies Description: IC REGULATOR SMD
Produkt ist nicht verfügbar
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111-4164PBF Infineon Technologies Description: IC REGULATOR SMD
Produkt ist nicht verfügbar
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111-3040PBF Infineon Technologies Description: IC REGULATOR SMD
Produkt ist nicht verfügbar
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111-3045PBF Infineon Technologies Description: IC REGULATOR SMD
Produkt ist nicht verfügbar
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111-4145PBF Infineon Technologies Description: IC GATE DRVR SMD
Packaging: Tube
Part Status: Obsolete
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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111-4146PBF Infineon Technologies Description: IC REGULATOR SMD
Produkt ist nicht verfügbar
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111-4142BPBF Infineon Technologies Description: IC REGULATOR CTLR SMD
Produkt ist nicht verfügbar
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111-3060PBF Infineon Technologies Description: IC REGULATOR SMD
Produkt ist nicht verfügbar
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EVAL1EDC20H12AHSIC EVAL1EDC20H12AHSIC Infineon Technologies Infineon-AN_2017-14_Evaluation_Board_EVAL-1EDx20H12AH-SIC-AN-v01_00-EN.pdf?fileId=5546d4625fe3678401601333aa6e192d Description: EVAL BD 1EDC20H12AH IMZ120R045M1
Packaging: Box
Function: Gate Driver
Type: Power Management
Contents: Board(s)
Utilized IC / Part: 1EDC20H12AH, IMZ120R045M1
Supplied Contents: Board(s)
Secondary Attributes: On-Board LEDs
Part Status: Obsolete
Produkt ist nicht verfügbar
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IMZ120R045M1XKSA1 IMZ120R045M1XKSA1 Infineon Technologies Infineon-IMZ120R045M1-DS-v02_02-EN.pdf?fileId=5546d46269bda8df0169de350d7b3a3e Description: SICFET N-CH 1200V 52A TO247-4
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 52A (Tc)
Rds On (Max) @ Id, Vgs: 59mOhm @ 20A, 15V
FET Feature: Current Sensing
Power Dissipation (Max): 228W (Tc)
Vgs(th) (Max) @ Id: 5.7V @ 10mA
Supplier Device Package: PG-TO247-4-1
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +20V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 800 V
auf Bestellung 334 Stücke:
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1+24.04 EUR
30+14.72 EUR
120+12.67 EUR
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TC223L16F133NACKXUMA1 TC223L16F133NACKXUMA1 Infineon Technologies Infineon-TC21x22x_AC-DS-v01_00-EN.pdf?fileId=5546d462694c98b401695304b96c03ac Description: IC MCU 32BIT 1MB FLASH 100TQFP
Packaging: Cut Tape (CT)
Package / Case: 100-TQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 133MHz
Program Memory Size: 1MB (1M x 8)
RAM Size: 96K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
EEPROM Size: 96K x 8
Core Processor: TriCore™
Data Converters: A/D 24x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 3.3V
Connectivity: CANbus, FlexRay, LINbus, QSPI
Peripherals: DMA, WDT
Supplier Device Package: PG-TQFP-100-23
Part Status: Active
Number of I/O: 78
DigiKey Programmable: Not Verified
auf Bestellung 1945 Stücke:
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1+25.68 EUR
10+20.36 EUR
25+19.04 EUR
100+17.58 EUR
250+16.89 EUR
500+16.47 EUR
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TC212L8F133NACKXUMA1 TC212L8F133NACKXUMA1 Infineon Technologies Infineon-TC21x22x_AC-DS-v01_00-EN.pdf?fileId=5546d462694c98b401695304b96c03ac Description: IC MCU 32BIT 512KB FLASH 80TQFP
Packaging: Cut Tape (CT)
Package / Case: 80-TQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 133MHz
Program Memory Size: 512KB (512K x 8)
RAM Size: 96K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
EEPROM Size: 96K x 8
Core Processor: TriCore™
Data Converters: A/D 24x12b SAR
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 3.3V
Connectivity: CANbus, LINbus, QSPI
Peripherals: DMA, WDT
Supplier Device Package: PG-TQFP-80-7
Part Status: Active
Number of I/O: 59
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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TC222L16F133NACKXUMA1 TC222L16F133NACKXUMA1 Infineon Technologies Infineon-TC21x22x_AC-DataSheet-v01_00-EN.pdf?fileId=5546d462694c98b401695304b96c03ac Description: IC MCU 32BIT 1MB FLASH 80TQFP
Packaging: Cut Tape (CT)
Package / Case: 80-TQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 133MHz
Program Memory Size: 1MB (1M x 8)
RAM Size: 96K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
EEPROM Size: 96K x 8
Core Processor: TriCore™
Data Converters: A/D 24x12b SAR
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 3.3V
Connectivity: CANbus, FlexRay, LINbus, QSPI
Peripherals: DMA, WDT
Supplier Device Package: PG-TQFP-80-7
Part Status: Active
Number of I/O: 59
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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TC224L16F133NACKXUMA1 TC224L16F133NACKXUMA1 Infineon Technologies Infineon-TC21x22x_AC-DS-v01_00-EN.pdf?fileId=5546d462694c98b401695304b96c03ac Description: IC MCU 32BIT 1MB FLASH 144TQFP
Packaging: Cut Tape (CT)
Package / Case: 144-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 133MHz
Program Memory Size: 1MB (1M x 8)
RAM Size: 96K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
EEPROM Size: 96K x 8
Core Processor: TriCore™
Data Converters: A/D 24x12b SAR
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 3.3V
Connectivity: CANbus, FlexRay, LINbus, QSPI
Peripherals: DMA, WDT
Supplier Device Package: PG-TQFP-144-27
Part Status: Active
Number of I/O: 120
DigiKey Programmable: Not Verified
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10+46.75 EUR
25+44.04 EUR
100+41.06 EUR
250+39.65 EUR
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KITAURIXTC234TFTTOBO1 KITAURIXTC234TFTTOBO1 Infineon Technologies Infineon-KIT_AURIX_TC224_TFT-UserManual-v01_00-EN.pdf?fileId=5546d4626c1f3dc3016c85c5843a7f4c Description: EVAL TC234 TFT AURIX
Packaging: Box
Mounting Type: Fixed
Type: MCU 32-Bit
Contents: Board(s), LCD
Core Processor: TriCore™
Utilized IC / Part: TC234
Platform: AURIX
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1+451.46 EUR
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AUXVNGP4062D-E Infineon Technologies Description: IC DISCRETE
Packaging: Tube
Part Status: Obsolete
Produkt ist nicht verfügbar
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AUXHKGP4062D-E Infineon Technologies Description: IC DISCRETE
Packaging: Tube
Part Status: Obsolete
Produkt ist nicht verfügbar
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AUXEC0368STRL Infineon Technologies Description: IC DISCRETE
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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64-4073PBF Infineon Technologies Description: IC MOSFET
Packaging: Tube
Produkt ist nicht verfügbar
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DEMODISTANCE2GOTOBO1 DEMODISTANCE2GOTOBO1 Infineon Technologies Infineon-Distance2Go%20Development%20Kit-PB-v02_00-EN.pdf?fileId=5546d4625debb399015e0951648d40f3 Description: DISTANCE2GO BGT24MTR11 RADAR
Packaging: Box
For Use With/Related Products: BGT24MTR11, XMC4200
Sensitivity: 24GHz
Frequency: 24GHz
Interface: USB
Type: Transceiver; RADAR
Sensor Type: Radar
Utilized IC / Part: BGT24MTR11, XMC4200
Supplied Contents: Board(s)
Embedded: Yes, MCU, 32-Bit
Sensing Range: 25M
Part Status: Obsolete
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DEMOSENSE2GOLTOBO1 DEMOSENSE2GOLTOBO1 Infineon Technologies Infineon-Sense2GoL_development_kit-PB-v01_00-EN.pdf?fileId=5546d462636cc8fb0163eeb7b2d06f35 Description: SENSE2GOL
Packaging: Box
Embedded: No
Part Status: Obsolete
Produkt ist nicht verfügbar
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EVALM1CM610N3TOBO1 EVALM1CM610N3TOBO1 Infineon Technologies Infineon-AN2017-09_Eval-M1-CM610N3-AN-v01_00-EN.pdf?fileId=5546d4625c167129015c52c1c3e17c4a Description: EVAL CIPOS IKCM10H60GA
Packaging: Box
Function: Motor Controller/Driver
Type: Power Management
Supplied Contents: Board(s)
Part Status: Obsolete
Contents: Board(s)
Produkt ist nicht verfügbar
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EVALM13645ATOBO1 EVALM13645ATOBO1 Infineon Technologies Infineon-AN2016-15_EVAL-M1-36-45A_User_Manual-UM-v01_02-EN.pdf?fileId=5546d4625cc9456a015d2b0ce2497e69 Description: EVAL CIPOS IRSM836-045A
Packaging: Box
Function: Motor Controller/Driver
Type: Power Management
Supplied Contents: Board(s)
Part Status: Obsolete
Contents: Board(s)
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1+219.79 EUR
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EVALM10565DTOBO1 EVALM10565DTOBO1 Infineon Technologies Description: EVAL CIPOS IRSM505-065DA2
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EVALM13644ATOBO1 EVALM13644ATOBO1 Infineon Technologies Infineon-EVAL-M1-36-44MA-UserManual-v01_00-EN.pdf?fileId=5546d4626cb27db2016d43c779907ffc Description: EVAL BOARD FOR M13644ATOBO1
Packaging: Box
Function: Motor Controller/Driver
Type: Power Management
Utilized IC / Part: M13644ATOBO1
Supplied Contents: Board(s)
Part Status: Active
Contents: Board(s)
auf Bestellung 4 Stücke:
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EVALM10584DTOBO1 EVALM10584DTOBO1 Infineon Technologies Infineon-AN2016-14_EVAL-M1-05-84D_User_Manual-UM-v02_01-EN.pdf?fileId=5546d4625696ed760156da2dd6eb6f50 Description: EVAL CIPOS IRSM505-084DA2
Packaging: Box
Function: Motor Controller/Driver
Type: Power Management
Supplied Contents: Board(s)
Part Status: Active
Contents: Board(s)
auf Bestellung 16 Stücke:
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1+210.88 EUR
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SIPC69N60CFDX1SA4 Infineon Technologies Description: MOSFET N-CH HI POWER DIE
Produkt ist nicht verfügbar
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IPI80N04S403BAKSA1 Infineon Technologies Description: MOSFET N-CH 40V TO263
Produkt ist nicht verfügbar
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IPB80N04S403JEATMA1 IPB80N04S403JEATMA1 Infineon Technologies Description: MOSFET N-CH 40V 80A TO263-3-2
Packaging: Bulk
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 155°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 3.7mOhm @ 80A, 10V
Power Dissipation (Max): 94W (Tc)
Vgs(th) (Max) @ Id: 4V @ 53µA
Supplier Device Package: PG-TO263-3-2
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 66 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5260 pF @ 25 V
Produkt ist nicht verfügbar
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BSM300GB60DLCE3256HDLA1 Infineon Technologies Description: IGBT MODULE 2 MED POWER
Packaging: Tray
Produkt ist nicht verfügbar
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DD1000S33HE3BOSA1 DD1000S33HE3BOSA1 Infineon Technologies Infineon-DD1000S33HE3-DS-v03_02-EN.pdf?fileId=db3a30431ce5fb52011d7605752a7279 Description: DIODE MODULE GP 3300V AGIHVB1303
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 1000A (DC)
Supplier Device Package: AG-IHVB130-3
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 3300 V
Voltage - Forward (Vf) (Max) @ If: 3.85 V @ 1000 A
Current - Reverse Leakage @ Vr: 1000 A @ 1800 V
Produkt ist nicht verfügbar
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FZ1200R33KF2CNOSA2 Infineon Technologies FZ1200R33KF2C_Rev2.1_11-25-13.pdf Description: IGBT MODULE 3300V 2000A
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Full Bridge
Operating Temperature: -40°C ~ 125°C
Vce(on) (Max) @ Vge, Ic: 4.25V @ 15V, 1.2kA
NTC Thermistor: No
Part Status: Obsolete
Current - Collector (Ic) (Max): 2000 A
Voltage - Collector Emitter Breakdown (Max): 3300 V
Power - Max: 14500 W
Current - Collector Cutoff (Max): 12 mA
Input Capacitance (Cies) @ Vce: 150 nF @ 25 V
Produkt ist nicht verfügbar
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FZ1200R33KF2CB3S2NDSA1 Infineon Technologies FZ1200R33KF2C_Rev2.1_11-25-13.pdf Description: IGBT MODULE 3300V 2000A
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Full Bridge
Operating Temperature: -40°C ~ 125°C
Vce(on) (Max) @ Vge, Ic: 4.25V @ 15V, 1.2kA
NTC Thermistor: No
Part Status: Obsolete
Current - Collector (Ic) (Max): 2000 A
Voltage - Collector Emitter Breakdown (Max): 3300 V
Power - Max: 14500 W
Current - Collector Cutoff (Max): 12 mA
Input Capacitance (Cies) @ Vce: 150 nF @ 25 V
Produkt ist nicht verfügbar
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FZ800R33KF2CNOSA2 FZ800R33KF2CNOSA2 Infineon Technologies FZ800R33KF2C_Rev2.1_11-25-13.pdf Description: IGBT MODULE 3300V 1A 9600W
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge
Operating Temperature: -40°C ~ 125°C
Vce(on) (Max) @ Vge, Ic: 4.25V @ 15V, 800A
NTC Thermistor: No
Part Status: Obsolete
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 3300 V
Power - Max: 9600 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 100 nF @ 25 V
Produkt ist nicht verfügbar
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IPT029N08N5ATMA1 Infineon-IPT029N08N5-DS-v02_00-EN.pdf?fileId=5546d46258f240be0158f28c77120098
IPT029N08N5ATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 80V 52A/169A HSOF-8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 52A (Ta), 169A (Tc)
Rds On (Max) @ Id, Vgs: 2.9mOhm @ 150A, 10V
Power Dissipation (Max): 168W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 108µA
Supplier Device Package: PG-HSOF-8-1
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 87 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6500 pF @ 40 V
Produkt ist nicht verfügbar
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KITLGPWRBOM004TOBO1 Infineon-UserManual_LVDSPD_low_voltage_drives_scalable_power_demonstration_board-UM-v01_00-EN.pdf?fileId=5546d462696dbf120169b58bda49538e
KITLGPWRBOM004TOBO1
Hersteller: Infineon Technologies
Description: EVAL POWER BOARD 60V
Packaging: Box
Function: Half H-Bridge Driver (Internal FET)
Type: Power Management
Supplied Contents: Board(s)
Part Status: Active
auf Bestellung 6 Stücke:
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Anzahl Preis
1+84.46 EUR
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KITLGPWRBOM005TOBO1 Infineon-UserManual_LVDSPD_low_voltage_drives_scalable_power_demonstration_board-UM-v01_00-EN.pdf?fileId=5546d462696dbf120169b58bda49538e
KITLGPWRBOM005TOBO1
Hersteller: Infineon Technologies
Description: EVAL POWER BOARD 100V
auf Bestellung 5 Stücke:
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KITLGPWRBOM006TOBO1 Infineon-UserManual_LVDSPD_low_voltage_drives_scalable_power_demonstration_board-UM-v01_00-EN.pdf?fileId=5546d462696dbf120169b58bda49538e
KITLGPWRBOM006TOBO1
Hersteller: Infineon Technologies
Description: EVAL POWER BOARD 150V
auf Bestellung 5 Stücke:
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KITLGPWRBOM008TOBO1 Infineon-UserManual_LVDSPD_low_voltage_drives_scalable_power_demonstration_board-UM-v01_00-EN.pdf?fileId=5546d462696dbf120169b58bda49538e
KITLGPWRBOM008TOBO1
Hersteller: Infineon Technologies
Description: EVAL POWER BOARD 250V
auf Bestellung 5 Stücke:
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SIPC10N65C3X1SA2
Hersteller: Infineon Technologies
Description: MOSFET
Packaging: Bulk
Part Status: Active
Produkt ist nicht verfügbar
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SIPC10N65C3X1SA1
Hersteller: Infineon Technologies
Description: MOSFET
Packaging: Bulk
Part Status: Obsolete
Produkt ist nicht verfügbar
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FF1000R17IE4S4BOSA2
Hersteller: Infineon Technologies
Description: IGBT MOD 1700V 1390A AGPRIME3-1
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: 2 Independent
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.45V @ 15V, 1000A
NTC Thermistor: Yes
Supplier Device Package: AG-PRIME3-1
Current - Collector (Ic) (Max): 1390 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Power - Max: 6250 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 81 pF @ 25 V
Produkt ist nicht verfügbar
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FM24C04B-G2TR
Hersteller: Infineon Technologies
Description: IC FRAM 4KBIT I2C 1MHZ 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 4Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: FRAM (Ferroelectric RAM)
Clock Frequency: 1 MHz
Memory Format: FRAM
Supplier Device Package: 8-SOIC
Part Status: Obsolete
Memory Interface: I²C
Access Time: 550 ns
Memory Organization: 512 x 8
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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IMW120R220M1HXKSA1 Infineon-IMW120R220M1H-DS-v01_01-EN.pdf?fileId=5546d46269e1c019016a92fe078366a0
IMW120R220M1HXKSA1
Hersteller: Infineon Technologies
Description: SICFET N-CH 1.2KV 13A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
Rds On (Max) @ Id, Vgs: 286mOhm @ 4A, 18V
Power Dissipation (Max): 75W (Tc)
Vgs(th) (Max) @ Id: 5.7V @ 1.6mA
Supplier Device Package: PG-TO247-3-41
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 8.5 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 289 pF @ 800 V
auf Bestellung 787 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+10.05 EUR
30+4.83 EUR
120+4.44 EUR
510+4.18 EUR
Mindestbestellmenge: 2
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IMW120R350M1HXKSA1 Infineon-IMW120R350M1H-DS-v01_01-EN.pdf?fileId=5546d46269e1c019016a92fe1a0a66a3
IMW120R350M1HXKSA1
Hersteller: Infineon Technologies
Description: SICFET N-CH 1.2KV 4.7A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.7A (Tc)
Rds On (Max) @ Id, Vgs: 455mOhm @ 2A, 18V
Power Dissipation (Max): 60W (Tc)
Vgs(th) (Max) @ Id: 5.7V @ 1mA
Supplier Device Package: PG-TO247-3-41
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 5.3 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 182 pF @ 800 V
auf Bestellung 668 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+9.40 EUR
30+5.29 EUR
120+4.43 EUR
510+3.78 EUR
Mindestbestellmenge: 2
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IMZ120R140M1HXKSA1 Infineon-IMZ120R140M1H-DS-v01_01-EN.pdf?fileId=5546d46269e1c019016a92fd9763668d
IMZ120R140M1HXKSA1
Hersteller: Infineon Technologies
Description: SICFET N-CH 1.2KV 19A TO247-4
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Tc)
Rds On (Max) @ Id, Vgs: 182mOhm @ 6A, 18V
Power Dissipation (Max): 94W (Tc)
Vgs(th) (Max) @ Id: 5.7V @ 2.5mA
Supplier Device Package: PG-TO247-4-1
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 454 pF @ 800 V
auf Bestellung 17 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+12.57 EUR
Mindestbestellmenge: 2
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IMZ120R220M1HXKSA1 Infineon-IMZ120R220M1H-DS-v01_01-EN.pdf?fileId=5546d46269e1c019016a92fd8545668a
IMZ120R220M1HXKSA1
Hersteller: Infineon Technologies
Description: SICFET N-CH 1.2KV 13A TO247-4
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
Rds On (Max) @ Id, Vgs: 220mOhm @ 4A, 18V
Power Dissipation (Max): 75W (Tc)
Vgs(th) (Max) @ Id: 5.7V @ 1.6mA
Supplier Device Package: PG-TO247-4-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 8.5 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 289 pF @ 800 V
auf Bestellung 86 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+11.05 EUR
30+6.21 EUR
Mindestbestellmenge: 2
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IMZ120R350M1HXKSA1 Infineon-IMZ120R350M1H-DS-v01_01-EN.pdf?fileId=5546d46269e1c019016a92fd75376687
IMZ120R350M1HXKSA1
Hersteller: Infineon Technologies
Description: SICFET N-CH 1.2KV 4.7A TO247-4
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.7A (Tc)
Rds On (Max) @ Id, Vgs: 350mOhm @ 2A, 18V
Power Dissipation (Max): 60W (Tc)
Vgs(th) (Max) @ Id: 5.7V @ 1mA
Supplier Device Package: PG-TO247-4-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 5.3 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 182 pF @ 800 V
auf Bestellung 289 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+10.30 EUR
30+5.73 EUR
120+4.91 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
TLE5109A16DE2210XUMA1 Infineon-TLE5x09A16_D-DS-v02_00-EN.pdf?fileId=5546d462696dbf12016977889fe858c9
TLE5109A16DE2210XUMA1
Hersteller: Infineon Technologies
Description: IC ANGLE SENSOR 5.0 V
Packaging: Cut Tape (CT)
Package / Case: 16-TSSOP (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Output: Analog Voltage
Termination Style: Gull Wing
Voltage - Supply: 5V
Linearity: ±0.1°
Actuator Type: External Magnet, Not Included
Technology: Magnetoresistive
For Measuring: Angle
Supplier Device Package: PG-TDSO-16-2
Rotation Angle - Electrical, Mechanical: 0° ~ 180°
Output Signal: Cosine, Sine
Grade: Automotive
Part Status: Active
Qualification: AEC-Q100
Produkt ist nicht verfügbar
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IAUA200N04S5N010AUMA1 Infineon-IAUA200N04S5N010-DS-v01_10-EN.pdf?fileId=5546d462647040d101647051b3671ed1
IAUA200N04S5N010AUMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 40V 200A 5HSOF
Packaging: Cut Tape (CT)
Package / Case: 5-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 200A (Tc)
Rds On (Max) @ Id, Vgs: 1mOhm @ 100A, 10V
Power Dissipation (Max): 167W (Tc)
Vgs(th) (Max) @ Id: 3.4V @ 100µA
Supplier Device Package: PG-HSOF-5-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 132 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7650 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 3486 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+4.49 EUR
10+3.08 EUR
100+2.26 EUR
500+1.91 EUR
1000+1.77 EUR
Mindestbestellmenge: 4
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IPG20N04S4L07AATMA1 Infineon-IPG20N04S4L_07A-DS-v01_00-en.pdf?fileId=db3a30433d346a2d013d454a0c9d515c
IPG20N04S4L07AATMA1
Hersteller: Infineon Technologies
Description: MOSFET 2N-CH 40V 20A 8TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount, Wettable Flank
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 65W
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 20A
Input Capacitance (Ciss) (Max) @ Vds: 3980pF @ 25V
Rds On (Max) @ Id, Vgs: 7.2mOhm @ 17A, 10V
Gate Charge (Qg) (Max) @ Vgs: 50nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.2V @ 30µA
Supplier Device Package: PG-TDSON-8-10
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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TLE5009A16DE1200XUMA1 Infineon-TLE5x09A16_D-DS-v02_00-EN.pdf?fileId=5546d462696dbf12016977889fe858c9
TLE5009A16DE1200XUMA1
Hersteller: Infineon Technologies
Description: SENSOR ANGLE 360DEG SMD
Packaging: Cut Tape (CT)
Package / Case: 16-TSSOP (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Output: Analog Voltage
Operating Temperature: -40°C ~ 125°C
Termination Style: Gull Wing
Voltage - Supply: 3V ~ 3.6V
Actuator Type: External Magnet, Not Included
Technology: Magnetoresistive
For Measuring: Angle
Supplier Device Package: PG-TDSO-16
Rotation Angle - Electrical, Mechanical: 0° ~ 360°, Continuous
Output Signal: Cosine, Sine
Part Status: Active
Grade: Automotive
Qualification: AEC-Q100
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TLE5009A16DE1210XUMA1 Infineon-TLE5x09A16_D-DS-v02_00-EN.pdf?fileId=5546d462696dbf12016977889fe858c9
TLE5009A16DE1210XUMA1
Hersteller: Infineon Technologies
Description: SENSOR ANGLE 360DEG SMD
Packaging: Cut Tape (CT)
Package / Case: 16-TSSOP (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Output: Analog Voltage
Operating Temperature: -40°C ~ 125°C
Termination Style: Gull Wing
Voltage - Supply: 3V ~ 3.6V
Actuator Type: External Magnet, Not Included
Technology: Magnetoresistive
For Measuring: Angle
Supplier Device Package: PG-TDSO-16
Rotation Angle - Electrical, Mechanical: 0° ~ 360°, Continuous
Output Signal: Cosine, Sine
Part Status: Active
Grade: Automotive
Qualification: AEC-Q100
auf Bestellung 6931 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+8.40 EUR
5+7.55 EUR
10+7.23 EUR
25+6.85 EUR
50+6.60 EUR
100+6.36 EUR
500+5.97 EUR
Mindestbestellmenge: 3
Im Einkaufswagen  Stück im Wert von  UAH
EVALNLM0011DCTOBO1 Infineon-Datasheet_NLM001x-DataSheet-v02_00-EN.pdf?fileId=5546d4626c1f3dc3016c8aec20e81011
EVALNLM0011DCTOBO1
Hersteller: Infineon Technologies
Description: EVAL KIT NLM0011 W/O NFC READER
Packaging: Bulk
For Use With/Related Products: NLM0011
Frequency: 13.56MHz
Type: Near Field Communication (NFC)
Supplied Contents: Board(s)
auf Bestellung 4 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+44.44 EUR
Im Einkaufswagen  Stück im Wert von  UAH
BTF60702ERVXUMA1 Infineon-%20Infineon-BTF6070-2ERV-DS-v01_00-EN-DataSheet-v01_00-EN.pdf?fileId=5546d4626cb27db2016d5e7e6e8c0667
BTF60702ERVXUMA1
Hersteller: Infineon Technologies
Description: IC SWTCH HISIDE SMRT
Packaging: Tape & Reel (TR)
Package / Case: 14-SOIC (0.154", 3.90mm Width) Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 2
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 120mOhm
Input Type: Non-Inverting
Voltage - Load: 5 ~ 36V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 2.3A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-TDSO-14-21
Fault Protection: Open Load Detect, Over Temperature, Over Voltage
Grade: Automotive
Part Status: Active
Qualification: AEC-Q100
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+3.11 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
111-3046PBF
Hersteller: Infineon Technologies
Description: IC REGULATOR SMD
Packaging: Tube
Part Status: Obsolete
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IR3565BMFC04TRP
Hersteller: Infineon Technologies
Description: IC DC/DC MULTIPHASE CTLR
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IR3565BMFS08TRP
Hersteller: Infineon Technologies
Description: IC DC/DC MULTIPHASE CTLR
Packaging: Tube
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
111-4143BPBF
Hersteller: Infineon Technologies
Description: IC REGULATOR CTLR SMD
Produkt ist nicht verfügbar
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IR3596MMT05TRP
Hersteller: Infineon Technologies
Description: IC DC/DC MULTIPHASE CTLR
Produkt ist nicht verfügbar
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111-4144PBF
Hersteller: Infineon Technologies
Description: IC REGULATOR SMD
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
111-4164PBF
Hersteller: Infineon Technologies
Description: IC REGULATOR SMD
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
111-3040PBF
Hersteller: Infineon Technologies
Description: IC REGULATOR SMD
Produkt ist nicht verfügbar
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111-3045PBF
Hersteller: Infineon Technologies
Description: IC REGULATOR SMD
Produkt ist nicht verfügbar
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111-4145PBF
Hersteller: Infineon Technologies
Description: IC GATE DRVR SMD
Packaging: Tube
Part Status: Obsolete
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
111-4146PBF
Hersteller: Infineon Technologies
Description: IC REGULATOR SMD
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
111-4142BPBF
Hersteller: Infineon Technologies
Description: IC REGULATOR CTLR SMD
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
111-3060PBF
Hersteller: Infineon Technologies
Description: IC REGULATOR SMD
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
EVAL1EDC20H12AHSIC Infineon-AN_2017-14_Evaluation_Board_EVAL-1EDx20H12AH-SIC-AN-v01_00-EN.pdf?fileId=5546d4625fe3678401601333aa6e192d
EVAL1EDC20H12AHSIC
Hersteller: Infineon Technologies
Description: EVAL BD 1EDC20H12AH IMZ120R045M1
Packaging: Box
Function: Gate Driver
Type: Power Management
Contents: Board(s)
Utilized IC / Part: 1EDC20H12AH, IMZ120R045M1
Supplied Contents: Board(s)
Secondary Attributes: On-Board LEDs
Part Status: Obsolete
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IMZ120R045M1XKSA1 Infineon-IMZ120R045M1-DS-v02_02-EN.pdf?fileId=5546d46269bda8df0169de350d7b3a3e
IMZ120R045M1XKSA1
Hersteller: Infineon Technologies
Description: SICFET N-CH 1200V 52A TO247-4
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 52A (Tc)
Rds On (Max) @ Id, Vgs: 59mOhm @ 20A, 15V
FET Feature: Current Sensing
Power Dissipation (Max): 228W (Tc)
Vgs(th) (Max) @ Id: 5.7V @ 10mA
Supplier Device Package: PG-TO247-4-1
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +20V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 800 V
auf Bestellung 334 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+24.04 EUR
30+14.72 EUR
120+12.67 EUR
Im Einkaufswagen  Stück im Wert von  UAH
TC223L16F133NACKXUMA1 Infineon-TC21x22x_AC-DS-v01_00-EN.pdf?fileId=5546d462694c98b401695304b96c03ac
TC223L16F133NACKXUMA1
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 1MB FLASH 100TQFP
Packaging: Cut Tape (CT)
Package / Case: 100-TQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 133MHz
Program Memory Size: 1MB (1M x 8)
RAM Size: 96K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
EEPROM Size: 96K x 8
Core Processor: TriCore™
Data Converters: A/D 24x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 3.3V
Connectivity: CANbus, FlexRay, LINbus, QSPI
Peripherals: DMA, WDT
Supplier Device Package: PG-TQFP-100-23
Part Status: Active
Number of I/O: 78
DigiKey Programmable: Not Verified
auf Bestellung 1945 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+25.68 EUR
10+20.36 EUR
25+19.04 EUR
100+17.58 EUR
250+16.89 EUR
500+16.47 EUR
Im Einkaufswagen  Stück im Wert von  UAH
TC212L8F133NACKXUMA1 Infineon-TC21x22x_AC-DS-v01_00-EN.pdf?fileId=5546d462694c98b401695304b96c03ac
TC212L8F133NACKXUMA1
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 512KB FLASH 80TQFP
Packaging: Cut Tape (CT)
Package / Case: 80-TQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 133MHz
Program Memory Size: 512KB (512K x 8)
RAM Size: 96K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
EEPROM Size: 96K x 8
Core Processor: TriCore™
Data Converters: A/D 24x12b SAR
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 3.3V
Connectivity: CANbus, LINbus, QSPI
Peripherals: DMA, WDT
Supplier Device Package: PG-TQFP-80-7
Part Status: Active
Number of I/O: 59
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TC222L16F133NACKXUMA1 Infineon-TC21x22x_AC-DataSheet-v01_00-EN.pdf?fileId=5546d462694c98b401695304b96c03ac
TC222L16F133NACKXUMA1
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 1MB FLASH 80TQFP
Packaging: Cut Tape (CT)
Package / Case: 80-TQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 133MHz
Program Memory Size: 1MB (1M x 8)
RAM Size: 96K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
EEPROM Size: 96K x 8
Core Processor: TriCore™
Data Converters: A/D 24x12b SAR
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 3.3V
Connectivity: CANbus, FlexRay, LINbus, QSPI
Peripherals: DMA, WDT
Supplier Device Package: PG-TQFP-80-7
Part Status: Active
Number of I/O: 59
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TC224L16F133NACKXUMA1 Infineon-TC21x22x_AC-DS-v01_00-EN.pdf?fileId=5546d462694c98b401695304b96c03ac
TC224L16F133NACKXUMA1
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 1MB FLASH 144TQFP
Packaging: Cut Tape (CT)
Package / Case: 144-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 133MHz
Program Memory Size: 1MB (1M x 8)
RAM Size: 96K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
EEPROM Size: 96K x 8
Core Processor: TriCore™
Data Converters: A/D 24x12b SAR
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 3.3V
Connectivity: CANbus, FlexRay, LINbus, QSPI
Peripherals: DMA, WDT
Supplier Device Package: PG-TQFP-144-27
Part Status: Active
Number of I/O: 120
DigiKey Programmable: Not Verified
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+57.59 EUR
10+46.75 EUR
25+44.04 EUR
100+41.06 EUR
250+39.65 EUR
Im Einkaufswagen  Stück im Wert von  UAH
KITAURIXTC234TFTTOBO1 Infineon-KIT_AURIX_TC224_TFT-UserManual-v01_00-EN.pdf?fileId=5546d4626c1f3dc3016c85c5843a7f4c
KITAURIXTC234TFTTOBO1
Hersteller: Infineon Technologies
Description: EVAL TC234 TFT AURIX
Packaging: Box
Mounting Type: Fixed
Type: MCU 32-Bit
Contents: Board(s), LCD
Core Processor: TriCore™
Utilized IC / Part: TC234
Platform: AURIX
auf Bestellung 7 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+451.46 EUR
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AUXVNGP4062D-E
Hersteller: Infineon Technologies
Description: IC DISCRETE
Packaging: Tube
Part Status: Obsolete
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
AUXHKGP4062D-E
Hersteller: Infineon Technologies
Description: IC DISCRETE
Packaging: Tube
Part Status: Obsolete
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
AUXEC0368STRL
Hersteller: Infineon Technologies
Description: IC DISCRETE
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
64-4073PBF
Hersteller: Infineon Technologies
Description: IC MOSFET
Packaging: Tube
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
DEMODISTANCE2GOTOBO1 Infineon-Distance2Go%20Development%20Kit-PB-v02_00-EN.pdf?fileId=5546d4625debb399015e0951648d40f3
DEMODISTANCE2GOTOBO1
Hersteller: Infineon Technologies
Description: DISTANCE2GO BGT24MTR11 RADAR
Packaging: Box
For Use With/Related Products: BGT24MTR11, XMC4200
Sensitivity: 24GHz
Frequency: 24GHz
Interface: USB
Type: Transceiver; RADAR
Sensor Type: Radar
Utilized IC / Part: BGT24MTR11, XMC4200
Supplied Contents: Board(s)
Embedded: Yes, MCU, 32-Bit
Sensing Range: 25M
Part Status: Obsolete
auf Bestellung 32 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+359.60 EUR
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DEMOSENSE2GOLTOBO1 Infineon-Sense2GoL_development_kit-PB-v01_00-EN.pdf?fileId=5546d462636cc8fb0163eeb7b2d06f35
DEMOSENSE2GOLTOBO1
Hersteller: Infineon Technologies
Description: SENSE2GOL
Packaging: Box
Embedded: No
Part Status: Obsolete
Produkt ist nicht verfügbar
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EVALM1CM610N3TOBO1 Infineon-AN2017-09_Eval-M1-CM610N3-AN-v01_00-EN.pdf?fileId=5546d4625c167129015c52c1c3e17c4a
EVALM1CM610N3TOBO1
Hersteller: Infineon Technologies
Description: EVAL CIPOS IKCM10H60GA
Packaging: Box
Function: Motor Controller/Driver
Type: Power Management
Supplied Contents: Board(s)
Part Status: Obsolete
Contents: Board(s)
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
EVALM13645ATOBO1 Infineon-AN2016-15_EVAL-M1-36-45A_User_Manual-UM-v01_02-EN.pdf?fileId=5546d4625cc9456a015d2b0ce2497e69
EVALM13645ATOBO1
Hersteller: Infineon Technologies
Description: EVAL CIPOS IRSM836-045A
Packaging: Box
Function: Motor Controller/Driver
Type: Power Management
Supplied Contents: Board(s)
Part Status: Obsolete
Contents: Board(s)
auf Bestellung 4 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+219.79 EUR
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EVALM10565DTOBO1
EVALM10565DTOBO1
Hersteller: Infineon Technologies
Description: EVAL CIPOS IRSM505-065DA2
auf Bestellung 3 Stücke:
Lieferzeit 10-14 Tag (e)
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EVALM13644ATOBO1 Infineon-EVAL-M1-36-44MA-UserManual-v01_00-EN.pdf?fileId=5546d4626cb27db2016d43c779907ffc
EVALM13644ATOBO1
Hersteller: Infineon Technologies
Description: EVAL BOARD FOR M13644ATOBO1
Packaging: Box
Function: Motor Controller/Driver
Type: Power Management
Utilized IC / Part: M13644ATOBO1
Supplied Contents: Board(s)
Part Status: Active
Contents: Board(s)
auf Bestellung 4 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+193.67 EUR
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EVALM10584DTOBO1 Infineon-AN2016-14_EVAL-M1-05-84D_User_Manual-UM-v02_01-EN.pdf?fileId=5546d4625696ed760156da2dd6eb6f50
EVALM10584DTOBO1
Hersteller: Infineon Technologies
Description: EVAL CIPOS IRSM505-084DA2
Packaging: Box
Function: Motor Controller/Driver
Type: Power Management
Supplied Contents: Board(s)
Part Status: Active
Contents: Board(s)
auf Bestellung 16 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+210.88 EUR
Im Einkaufswagen  Stück im Wert von  UAH
SIPC69N60CFDX1SA4
Hersteller: Infineon Technologies
Description: MOSFET N-CH HI POWER DIE
Produkt ist nicht verfügbar
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IPI80N04S403BAKSA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 40V TO263
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPB80N04S403JEATMA1
IPB80N04S403JEATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 40V 80A TO263-3-2
Packaging: Bulk
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 155°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 3.7mOhm @ 80A, 10V
Power Dissipation (Max): 94W (Tc)
Vgs(th) (Max) @ Id: 4V @ 53µA
Supplier Device Package: PG-TO263-3-2
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 66 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5260 pF @ 25 V
Produkt ist nicht verfügbar
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BSM300GB60DLCE3256HDLA1
Hersteller: Infineon Technologies
Description: IGBT MODULE 2 MED POWER
Packaging: Tray
Produkt ist nicht verfügbar
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DD1000S33HE3BOSA1 Infineon-DD1000S33HE3-DS-v03_02-EN.pdf?fileId=db3a30431ce5fb52011d7605752a7279
DD1000S33HE3BOSA1
Hersteller: Infineon Technologies
Description: DIODE MODULE GP 3300V AGIHVB1303
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 1000A (DC)
Supplier Device Package: AG-IHVB130-3
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 3300 V
Voltage - Forward (Vf) (Max) @ If: 3.85 V @ 1000 A
Current - Reverse Leakage @ Vr: 1000 A @ 1800 V
Produkt ist nicht verfügbar
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FZ1200R33KF2CNOSA2 FZ1200R33KF2C_Rev2.1_11-25-13.pdf
Hersteller: Infineon Technologies
Description: IGBT MODULE 3300V 2000A
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Full Bridge
Operating Temperature: -40°C ~ 125°C
Vce(on) (Max) @ Vge, Ic: 4.25V @ 15V, 1.2kA
NTC Thermistor: No
Part Status: Obsolete
Current - Collector (Ic) (Max): 2000 A
Voltage - Collector Emitter Breakdown (Max): 3300 V
Power - Max: 14500 W
Current - Collector Cutoff (Max): 12 mA
Input Capacitance (Cies) @ Vce: 150 nF @ 25 V
Produkt ist nicht verfügbar
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FZ1200R33KF2CB3S2NDSA1 FZ1200R33KF2C_Rev2.1_11-25-13.pdf
Hersteller: Infineon Technologies
Description: IGBT MODULE 3300V 2000A
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Full Bridge
Operating Temperature: -40°C ~ 125°C
Vce(on) (Max) @ Vge, Ic: 4.25V @ 15V, 1.2kA
NTC Thermistor: No
Part Status: Obsolete
Current - Collector (Ic) (Max): 2000 A
Voltage - Collector Emitter Breakdown (Max): 3300 V
Power - Max: 14500 W
Current - Collector Cutoff (Max): 12 mA
Input Capacitance (Cies) @ Vce: 150 nF @ 25 V
Produkt ist nicht verfügbar
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FZ800R33KF2CNOSA2 FZ800R33KF2C_Rev2.1_11-25-13.pdf
FZ800R33KF2CNOSA2
Hersteller: Infineon Technologies
Description: IGBT MODULE 3300V 1A 9600W
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge
Operating Temperature: -40°C ~ 125°C
Vce(on) (Max) @ Vge, Ic: 4.25V @ 15V, 800A
NTC Thermistor: No
Part Status: Obsolete
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 3300 V
Power - Max: 9600 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 100 nF @ 25 V
Produkt ist nicht verfügbar
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