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IPB100N06S3-04 IPB100N06S3-04 Infineon Technologies IPB%28I%2CP%29100N06S3-04.pdf Description: MOSFET N-CH 55V 100A TO263-3
Packaging: Bulk
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 4.1mOhm @ 80A, 10V
Power Dissipation (Max): 214W (Tc)
Vgs(th) (Max) @ Id: 4V @ 150µA
Supplier Device Package: PG-TO263-3-2
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 314 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 14230 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 642 Stücke:
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224+2.04 EUR
Mindestbestellmenge: 224
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BC858CWH6327XTSA1 BC858CWH6327XTSA1 Infineon Technologies Infineon-BC856SERIES_BC857SERIES_BC858SERIES_BC859SERIES_BC860SERIES-DS-v01_01-en.pdf?fileId=db3a304316f66ee8011787d183d011e9 Description: TRANS PNP 30V 0.1A PG-SOT323
Packaging: Bulk
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V
Frequency - Transition: 250MHz
Supplier Device Package: PG-SOT323
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 250 mW
auf Bestellung 273000 Stücke:
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6234+0.076 EUR
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MMBTA42LT1 MMBTA42LT1 Infineon Technologies INFNS17374-1.pdf?t.download=true&u=5oefqw Description: TRANS NPN 300V 0.5A SOT23-3
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Vce Saturation (Max) @ Ib, Ic: 500mV @ 2mA, 20mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 30mA, 10V
Frequency - Transition: 50MHz
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Obsolete
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 300 V
Power - Max: 225 mW
Produkt ist nicht verfügbar
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MMBT2907ALT1 MMBT2907ALT1 Infineon Technologies mmbt2907alt1-d.pdf Description: TRANS PNP 60V 0.6A SOT23-3
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max): 10nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Frequency - Transition: 200MHz
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Obsolete
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 225 mW
Produkt ist nicht verfügbar
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BCR169E6327HTSA1 BCR169E6327HTSA1 Infineon Technologies bcr169series.pdf?folderId=db3a30431400ef68011406f3ddb1012e&fileId=db3a30431428a373011440313bb302d1 Description: TRANS PREBIAS PNP 50V SOT23
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 5mA, 5V
Supplier Device Package: PG-SOT23
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 200 MHz
Resistor - Base (R1): 4.7 kOhms
Resistors Included: R1 Only
auf Bestellung 942000 Stücke:
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6648+0.075 EUR
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BFN38H6327XTSA1 BFN38H6327XTSA1 Infineon Technologies bfn38.pdf?folderId=db3a30431441fb5d011449af3ad90232&fileId=db3a30431441fb5d011449b536510236 Description: TRANS NPN 300V 0.2A PG-SOT223-4
Packaging: Bulk
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 2mA, 20mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 30mA, 10V
Frequency - Transition: 70MHz
Supplier Device Package: PG-SOT223-4
Part Status: Last Time Buy
Current - Collector (Ic) (Max): 200 mA
Voltage - Collector Emitter Breakdown (Max): 300 V
Power - Max: 1.5 W
auf Bestellung 3000 Stücke:
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1490+0.34 EUR
Mindestbestellmenge: 1490
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BC858AE6327HTSA1 BC858AE6327HTSA1 Infineon Technologies Infineon-BC856SERIES_BC857SERIES_BC858SERIES_BC859SERIES_BC860SERIES-DS-v01_01-en.pdf?fileId=db3a304316f66ee8011787d183d011e9 Description: TRANS PNP 30V 0.1A PG-SOT23
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 125 @ 2mA, 5V
Frequency - Transition: 250MHz
Supplier Device Package: PG-SOT23
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 330 mW
auf Bestellung 404500 Stücke:
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8314+0.06 EUR
Mindestbestellmenge: 8314
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BCW61DE6327HTSA1 BCW61DE6327HTSA1 Infineon Technologies bcw61_bcx71.pdf?folderId=db3a304314dca389011541d30fa21656&fileId=db3a304314dca3890115422f2cbc173b Description: TRANS PNP 32V 0.1A PG-SOT23
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 550mV @ 1.25mA, 50mA
Current - Collector Cutoff (Max): 20nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 380 @ 2mA, 5V
Frequency - Transition: 250MHz
Supplier Device Package: PG-SOT23
Part Status: Last Time Buy
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 32 V
Power - Max: 330 mW
auf Bestellung 190400 Stücke:
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4697+0.091 EUR
Mindestbestellmenge: 4697
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BC858CE6327HTSA1 BC858CE6327HTSA1 Infineon Technologies Infineon-BC856SERIES_BC857SERIES_BC858SERIES_BC859SERIES_BC860SERIES-DS-v01_01-en.pdf?fileId=db3a304316f66ee8011787d183d011e9 Description: TRANS PNP 30V 0.1A PG-SOT23
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V
Frequency - Transition: 250MHz
Supplier Device Package: PG-SOT23
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 330 mW
auf Bestellung 169480 Stücke:
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5333+0.091 EUR
Mindestbestellmenge: 5333
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BC858CE6433HTMA1 BC858CE6433HTMA1 Infineon Technologies Infineon-BC856SERIES_BC857SERIES_BC858SERIES_BC859SERIES_BC860SERIES-DS-v01_01-en.pdf?fileId=db3a304316f66ee8011787d183d011e9 Description: TRANS PNP 30V 0.1A PG-SOT23
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V
Frequency - Transition: 250MHz
Supplier Device Package: PG-SOT23
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 330 mW
auf Bestellung 220000 Stücke:
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6916+0.061 EUR
Mindestbestellmenge: 6916
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BAV170E6433HTMA1 BAV170E6433HTMA1 Infineon Technologies bav170series.pdf?folderId=db3a30431400ef6801141c748874044e&fileId=db3a30431400ef6801141cb8e81404e3 Description: DIODE ARRAY GP 80V 200MA PGSOT23
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 1.5 µs
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 200mA (DC)
Supplier Device Package: PG-SOT23
Operating Temperature - Junction: 150°C (Max)
Part Status: Last Time Buy
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 5 nA @ 75 V
auf Bestellung 61666 Stücke:
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7776+0.062 EUR
Mindestbestellmenge: 7776
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BCP54H6327XTSA1 BCP54H6327XTSA1 Infineon Technologies bcp54_bcp55_bcp56.pdf?fileId=db3a304314dca3890115475f01a81a0d Description: TRANS NPN 45V 1A PG-SOT223-4-10
Packaging: Bulk
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 2V
Frequency - Transition: 100MHz
Supplier Device Package: PG-SOT223-4-10
Part Status: Last Time Buy
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 2 W
auf Bestellung 231000 Stücke:
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1598+0.29 EUR
Mindestbestellmenge: 1598
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BCV26E6327HTSA1 BCV26E6327HTSA1 Infineon Technologies Infineon-BCV26_BCV46-DS-v01_01-en.pdf?fileId=db3a30431441fb5d011445cddad90187 Description: TRANS PNP DARL 30V 0.5A PG-SOT23
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Darlington
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 100µA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 20000 @ 100mA, 5V
Frequency - Transition: 200MHz
Supplier Device Package: PG-SOT23
Part Status: Last Time Buy
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 360 mW
auf Bestellung 174966 Stücke:
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3847+0.13 EUR
Mindestbestellmenge: 3847
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BC818K40E6327HTSA1 BC818K40E6327HTSA1 Infineon Technologies 4a-BC-817-40-E6433.pdf Description: TRANS NPN 25V 0.5A PG-SOT23
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 100mA, 1V
Frequency - Transition: 170MHz
Supplier Device Package: PG-SOT23
Part Status: Last Time Buy
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 25 V
Power - Max: 500 mW
auf Bestellung 312000 Stücke:
Lieferzeit 10-14 Tag (e)
4743+0.091 EUR
Mindestbestellmenge: 4743
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BAS16WH6327XTSA1 BAS16WH6327XTSA1 Infineon Technologies bas16series.pdf?folderId=db3a30431400ef6801141b5844e103ea&fileId=db3a30431400ef6801141b93811b03ff Description: DIODE STD 80V 250MA PGSOT323
Packaging: Bulk
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Current - Average Rectified (Io): 250mA
Supplier Device Package: PG-SOT323
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 1 µA @ 75 V
auf Bestellung 672373 Stücke:
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7969+0.065 EUR
Mindestbestellmenge: 7969
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ICE3B5565PBKSA1 ICE3B5565PBKSA1 Infineon Technologies CoolSET-F3.pdf?folderId=db3a304412b407950112b4182a3d24f8&fileId=db3a304412b407950112b428f6ba3f30 Description: IC OFFLINE SW FLYBACK TO220-6
Packaging: Tube
Package / Case: TO-220-6 Formed Leads
Mounting Type: Through Hole
Operating Temperature: -25°C ~ 130°C (TJ)
Duty Cycle: 72%
Frequency - Switching: 67kHz
Internal Switch(s): Yes
Voltage - Breakdown: 650V
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 8.5V ~ 21V
Supplier Device Package: PG-TO220-6-47
Fault Protection: Current Limiting, Open Loop, Over Load, Over Temperature, Over Voltage
Voltage - Start Up: 15 V
Control Features: Soft Start
Part Status: Obsolete
Power (Watts): 240 W
auf Bestellung 8300 Stücke:
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161+2.83 EUR
Mindestbestellmenge: 161
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BCX6910H6327XTSA1 BCX6910H6327XTSA1 Infineon Technologies bcx69.pdf?folderId=db3a304314dca38901155ffc06d51dc7&fileId=db3a3043156fd573011589f3f56603ee&location=.en.product.findProductTypeByName.html_dgdl_bcx69.pdf Description: TRANS PNP 20V 1A PG-SOT89
Packaging: Bulk
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 85 @ 500mA, 1V
Frequency - Transition: 100MHz
Supplier Device Package: PG-SOT89
Grade: Automotive
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 20 V
Power - Max: 3 W
Qualification: AEC-Q101
auf Bestellung 26000 Stücke:
Lieferzeit 10-14 Tag (e)
960+0.5 EUR
Mindestbestellmenge: 960
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BFN24E6327HTSA1 BFN24E6327HTSA1 Infineon Technologies bfn24_bfn26.pdf?folderId=db3a304314dca38901155ffc06d51dc7&fileId=db3a304314dca38901156a1bcc68214d Description: TRANS NPN 250V 0.2A SOT23
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 2mA, 20mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 30mA, 10V
Frequency - Transition: 70MHz
Supplier Device Package: PG-SOT23
Part Status: Not For New Designs
Current - Collector (Ic) (Max): 200 mA
Voltage - Collector Emitter Breakdown (Max): 250 V
Power - Max: 360 mW
auf Bestellung 30000 Stücke:
Lieferzeit 10-14 Tag (e)
5973+0.082 EUR
Mindestbestellmenge: 5973
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IGA30N60H3XKSA1 IGA30N60H3XKSA1 Infineon Technologies IGA30N60H3.pdf Description: IGBT TRENCH FS 600V 18A TO220-3
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 30A
Supplier Device Package: PG-TO220-3-31
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 18ns/207ns
Switching Energy: 1.17mJ
Test Condition: 400V, 30A, 10.5Ohm, 15V
Gate Charge: 165 nC
Current - Collector (Ic) (Max): 18 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 43 W
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
149+3.06 EUR
Mindestbestellmenge: 149
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IRGS4630DPBF IRGS4630DPBF Infineon Technologies IRGx4630D%28-E%29PbF.pdf Description: IGBT 600V 47A 206W D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 100 ns
Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 18A
Supplier Device Package: D2PAK
Td (on/off) @ 25°C: 40ns/105ns
Switching Energy: 95µJ (on), 350µJ (off)
Test Condition: 400V, 18A, 22Ohm, 15V
Gate Charge: 35 nC
Current - Collector (Ic) (Max): 47 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 54 A
Power - Max: 206 W
auf Bestellung 250 Stücke:
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142+3.21 EUR
Mindestbestellmenge: 142
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IPI80N06S405AKSA2 IPI80N06S405AKSA2 Infineon Technologies IPx80N06S4-05.pdf Description: MOSFET N-CHANNEL_55/60V
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 5.7mOhm @ 80A, 10V
Power Dissipation (Max): 107W (Tc)
Vgs(th) (Max) @ Id: 4V @ 60µA
Supplier Device Package: PG-TO262-3-1
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 81 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6500 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 12500 Stücke:
Lieferzeit 10-14 Tag (e)
278+1.75 EUR
Mindestbestellmenge: 278
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CY25811ZXC CY25811ZXC Infineon Technologies cy25811,12,14_8.pdf Description: IC CLOCK GEN 3.3V SS 8-TSSOP
auf Bestellung 8525 Stücke:
Lieferzeit 10-14 Tag (e)
229+2.11 EUR
Mindestbestellmenge: 229
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IPI80N06S4L05AKSA1 IPI80N06S4L05AKSA1 Infineon Technologies Infineon-I80N06S4L_05-DS-v01_00-en.pdf?fileId=db3a30431ff98815012038e65fed0d07 Description: MOSFET N-CH 60V 80A TO262-3
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 5.1mOhm @ 80A, 10V
Power Dissipation (Max): 107W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 60µA
Supplier Device Package: PG-TO262-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8180 pF @ 25 V
auf Bestellung 300 Stücke:
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300+1.36 EUR
Mindestbestellmenge: 300
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ICE3B2565FKLA1 ICE3B2565FKLA1 Infineon Technologies CoolSET-F3.pdf?folderId=db3a304412b407950112b4182a3d24f8&fileId=db3a304412b407950112b428f6ba3f30 Description: IC OFFLINE SWITCH FLYBACK 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -25°C ~ 130°C (TJ)
Duty Cycle: 72%
Frequency - Switching: 67kHz
Internal Switch(s): Yes
Voltage - Breakdown: 650V
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 8.5V ~ 21V
Supplier Device Package: PG-DIP-8
Fault Protection: Current Limiting, Open Loop, Over Load, Over Temperature, Over Voltage
Voltage - Start Up: 15 V
Control Features: Soft Start
Part Status: Obsolete
Power (Watts): 68 W
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CY7C1423TV18-267BZXC CY7C1423TV18-267BZXC Infineon Technologies Description: IC SRAM 36MBIT PAR 165FBGA
Packaging: Bag
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 36Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, DDR II
Clock Frequency: 267 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (13x15)
Part Status: Obsolete
Memory Interface: Parallel
Memory Organization: 2M x 18
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ICE2QR4780ZXKLA1 ICE2QR4780ZXKLA1 Infineon Technologies Infineon-ICE2QR4780Z-DS-v02_01-en.pdf?fileId=db3a30432a7fedfc012ab20ddc3636f8 Description: IC OFFLINE SWITCH FLYBACK 7DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm), 7 Leads
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Duty Cycle: 50%
Frequency - Switching: 52kHz
Internal Switch(s): Yes
Voltage - Breakdown: 800V
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 10.5V ~ 27V
Supplier Device Package: PG-DIP-7-1
Fault Protection: Current Limiting, Over Load, Over Temperature, Over Voltage
Voltage - Start Up: 18 V
Part Status: Obsolete
Power (Watts): 39 W
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ICE3A3065PBKSA1 ICE3A3065PBKSA1 Infineon Technologies CoolSET-F3.pdf?folderId=db3a304412b407950112b4182a3d24f8&fileId=db3a304412b407950112b428f6ba3f30 Description: IC OFFLINE SW FLYBACK TO220-6
Packaging: Tube
Package / Case: TO-220-6 Formed Leads
Mounting Type: Through Hole
Operating Temperature: -25°C ~ 130°C (TJ)
Duty Cycle: 72%
Frequency - Switching: 100kHz
Internal Switch(s): Yes
Voltage - Breakdown: 650V
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 8.5V ~ 21V
Supplier Device Package: PG-TO220-6-47
Fault Protection: Current Limiting, Open Loop, Over Load, Over Temperature, Over Voltage
Voltage - Start Up: 15 V
Control Features: Soft Start
Part Status: Obsolete
Power (Watts): 128 W
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ICE3A5565PBKSA1 ICE3A5565PBKSA1 Infineon Technologies CoolSET-F3.pdf?folderId=db3a304412b407950112b4182a3d24f8&fileId=db3a304412b407950112b428f6ba3f30 Description: IC OFFLINE SW FLYBACK TO220-6
Packaging: Tube
Package / Case: TO-220-6 Formed Leads
Mounting Type: Through Hole
Operating Temperature: -25°C ~ 130°C (TJ)
Duty Cycle: 72%
Frequency - Switching: 100kHz
Internal Switch(s): Yes
Voltage - Breakdown: 650V
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 8.5V ~ 21V
Supplier Device Package: PG-TO220-6-47
Fault Protection: Current Limiting, Open Loop, Over Load, Over Temperature, Over Voltage
Voltage - Start Up: 15 V
Control Features: Soft Start
Part Status: Obsolete
Power (Watts): 240 W
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CY241V8ASXC-12 CY241V8ASXC-12 Infineon Technologies CY241V08A-12.pdf Description: IC CLOCK GENERATOR 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Output: Clock
Frequency - Max: 74.25MHz
Type: Clock Generator, Fanout Distribution
Input: Clock
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 3.135V ~ 3.465V
Ratio - Input:Output: 1:2
Differential - Input:Output: No/No
Supplier Device Package: 8-SOIC
PLL: Yes with Bypass
Divider/Multiplier: Yes/No
Number of Circuits: 1
DigiKey Programmable: Not Verified
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CY62137CV30LL-70BVXE CY62137CV30LL-70BVXE Infineon Technologies CY62137CV%2830%2C33%29MoBL.pdf Description: IC SRAM 2MBIT PARALLEL 48VFBGA
Packaging: Tray
Package / Case: 48-VFBGA
Mounting Type: Surface Mount
Memory Size: 2Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2.7V ~ 3.3V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 48-VFBGA (6x8)
Write Cycle Time - Word, Page: 70ns
Memory Interface: Parallel
Access Time: 70 ns
Memory Organization: 128K x 16
DigiKey Programmable: Not Verified
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CY7C1362A-166AC CY7C1362A-166AC Infineon Technologies CY7C1360A_62A.pdf Description: IC SRAM 9MBIT 166MHZ 100LQFP
Packaging: Bag
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Memory Size: 9Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 3.135V ~ 3.6V
Technology: SRAM - Synchronous, SDR
Clock Frequency: 166 MHz
Memory Format: SRAM
Supplier Device Package: 100-TQFP (14x20)
Memory Interface: Parallel
Access Time: 3.5 ns
Memory Organization: 512K x 18
DigiKey Programmable: Not Verified
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CY2DM1502ZXI CY2DM1502ZXI Infineon Technologies ?utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Description: IC CLK BUFFER 1:2 1.5GHZ 8TSSOP
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CY7C1413AV18-250BZXC CY7C1413AV18-250BZXC Infineon Technologies CY7C1411,13,15,26AV18.pdf Description: IC SRAM 36MBIT PAR 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 36Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, QDR II
Clock Frequency: 250 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (15x17)
Part Status: Obsolete
Memory Interface: Parallel
Memory Organization: 2M x 18
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TLE4275S TLE4275S Infineon Technologies Infineon-TLE4275V50-DS-v01_07-en.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a304412b407950112b437f96169d5&ack=t Description: IC REG LIN 5V 450MA TO220-5-12
Packaging: Tube
Package / Case: TO-220-5
Output Type: Fixed
Mounting Type: Through Hole
Current - Output: 450mA
Operating Temperature: -40°C ~ 150°C
Output Configuration: Positive
Current - Quiescent (Iq): 200 µA
Voltage - Input (Max): 42V
Number of Regulators: 1
Supplier Device Package: PG-TO220-5-12
Voltage - Output (Min/Fixed): 5V
Control Features: Reset
Part Status: Obsolete
PSRR: 60dB (100Hz)
Voltage Dropout (Max): 0.5V @ 300mA
Protection Features: Over Current, Over Temperature, Reverse Polarity, Short Circuit, Transient Voltage
Current - Supply (Max): 22 mA
Grade: Automotive
Qualification: AEC-Q100
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CY7C4231V-15JXC CY7C4231V-15JXC Infineon Technologies CY7C4421%2C4201%2C11%2C21%2C31%2C41%2C51%20RevB.pdf Description: IC FIFO SYNC 2KX9 11NS 32PLCC
Packaging: Tube
Package / Case: 32-LCC (J-Lead)
Mounting Type: Surface Mount
Function: Synchronous
Memory Size: 18K (2K x 9)
Operating Temperature: 0°C ~ 70°C
Data Rate: 66.7MHz
Access Time: 11ns
Current - Supply (Max): 20mA
Supplier Device Package: 32-PLCC (11.43x13.97)
Bus Directional: Uni-Directional
Expansion Type: Depth, Width
Programmable Flags Support: Yes
Retransmit Capability: No
FWFT Support: No
Voltage - Supply: 3 V ~ 3.6 V
DigiKey Programmable: Not Verified
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IPP60R1K4C6XKSA1 IPP60R1K4C6XKSA1 Infineon Technologies DS_IPP60R1K4C6.pdf?folderId=db3a3043163797a6011637d4bae7003b&fileId=db3a30433899edae0138b2b95bbb0f7e Description: MOSFET N-CH 600V 3.2A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.2A (Tc)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 1.1A, 10V
Power Dissipation (Max): 28.4W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 90µA
Supplier Device Package: PG-TO220-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 1.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 200 pF @ 100 V
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IPI45N06S409AKSA1 IPI45N06S409AKSA1 Infineon Technologies IPx45N06S4-09.pdf Description: MOSFET N-CH 60V 45A TO262-3
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
Rds On (Max) @ Id, Vgs: 9.4mOhm @ 45A, 10V
Power Dissipation (Max): 71W (Tc)
Vgs(th) (Max) @ Id: 4V @ 34µA
Supplier Device Package: PG-TO262-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3785 pF @ 25 V
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CY62147DV30LL-70BVXA CY62147DV30LL-70BVXA Infineon Technologies CY62147DV30.pdf Description: IC SRAM 4MBIT PARALLEL 48VFBGA
Packaging: Tray
Package / Case: 48-VFBGA
Mounting Type: Surface Mount
Memory Size: 4Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.2V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 48-VFBGA (6x8)
Write Cycle Time - Word, Page: 70ns
Memory Interface: Parallel
Access Time: 70 ns
Memory Organization: 256K x 16
DigiKey Programmable: Not Verified
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CY7C25682KV18-400BZC CY7C25682KV18-400BZC Infineon Technologies Infineon-CY7C25682KV18_CY7C25702KV18_72-Mbit_DDR_II+_SRAM_Two-Word_Burst_Architecture_(2.5_Cycle_Read_Latency)_with_ODT-DataSheet-v07_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebde66630e8&utm_source=cypress&utm_medium=referral&ut Description: IC SRAM 72MBIT PARALLEL 165FBGA
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SPD03N60S5BTMA1 SPD03N60S5BTMA1 Infineon Technologies SPD_U03N60S5_Rev.2.4.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a304412b407950112b42c8ab0471f Description: MOSFET N-CH 600V 3.2A TO252-3
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.2A (Tc)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 2A, 10V
Power Dissipation (Max): 38W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 135µA
Supplier Device Package: PG-TO252-3-11
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 420 pF @ 25 V
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CYD02S36V18-200BBC CYD02S36V18-200BBC Infineon Technologies Description: IC SRAM 2MBIT 200MHZ 256FBGA
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IPS65R1K0CEAKMA1 IPS65R1K0CEAKMA1 Infineon Technologies Infineon-IPS65R1K0CE-DS-v02_00-EN.pdf?fileId=5546d46249be182c0149c7a3c90c1e8a Description: MOSFET N-CH 650V 4.3A TO251
Packaging: Tube
Package / Case: TO-251-3 Stub Leads, IPak
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.3A (Tc)
Rds On (Max) @ Id, Vgs: 1Ohm @ 1.5A, 10V
Power Dissipation (Max): 37W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 200µA
Supplier Device Package: TO-251
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 15.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 328 pF @ 100 V
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IPI60R299CPXKSA1 IPI60R299CPXKSA1 Infineon Technologies IPI60R299CP_rev2.0.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a304412b407950112b42e79d249d3 Description: MOSFET N-CH 600V 11A TO262-3
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 299mOhm @ 6.6A, 10V
Power Dissipation (Max): 96W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 440µA
Supplier Device Package: PG-TO262-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 100 V
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CYD02S36V18-167BBC CYD02S36V18-167BBC Infineon Technologies Description: IC SRAM 2MBIT PARALLEL 256FBGA
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CY7C4261-10JXI CY7C4261-10JXI Infineon Technologies CY7C4261,71_RevI.pdf Description: IC SYNC FIFO MEM 16KX9 32-PLCC
Packaging: Tube
Package / Case: 32-LCC (J-Lead)
Mounting Type: Surface Mount
Function: Synchronous
Memory Size: 144K (16K x 9)
Operating Temperature: -40°C ~ 85°C
Data Rate: 100MHz
Access Time: 8ns
Current - Supply (Max): 40mA
Supplier Device Package: 32-PLCC (11.43x13.97)
Bus Directional: Uni-Directional
Expansion Type: Depth, Width
Programmable Flags Support: Yes
Retransmit Capability: No
FWFT Support: No
Part Status: Obsolete
Voltage - Supply: 4.5 V ~ 5.5 V
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IPI80N04S204AKSA2 IPI80N04S204AKSA2 Infineon Technologies IPx80N04S2-04.pdf Description: MOSFET N-CH 40V 80A TO262-3
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 3.7mOhm @ 80A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PG-TO262-3-1
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5300 pF @ 25 V
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IDH06S60CAKSA1 IDH06S60CAKSA1 Infineon Technologies IDH06S60C.pdf Description: DIODE SIL CARB 600V 6A TO220-2-2
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 280pF @ 1V, 1MHz
Current - Average Rectified (Io): 6A
Supplier Device Package: PG-TO220-2-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 6 A
Current - Reverse Leakage @ Vr: 80 µA @ 600 V
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IRF1104LPBF IRF1104LPBF Infineon Technologies irf1104spbf.pdf?fileId=5546d462533600a4015355da952e1897 Description: MOSFET N-CH 40V 100A TO262
Produkt ist nicht verfügbar
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IRS2541PBF IRS2541PBF Infineon Technologies IRS254%280%2C1%29%28S%29PbF.pdf Description: IC LED DRIVER CTRLR PWM 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Number of Outputs: 1
Frequency: 500kHz
Type: DC DC Controller
Operating Temperature: -25°C ~ 150°C (TJ)
Internal Switch(s): No
Topology: Step-Down (Buck)
Supplier Device Package: 8-PDIP
Dimming: PWM
Voltage - Supply (Min): 9V
Voltage - Supply (Max): 15.6V
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IRAM136-1561A2 Infineon Technologies fundamentals-of-power-semiconductors Description: IC MOD PWR HYBRID 600V 15A MOTOR
Packaging: Tube
Package / Case: 29-PowerSSIP Module, 21 Leads, Formed Leads
Mounting Type: Through Hole
Type: IGBT
Configuration: 3 Phase
Voltage - Isolation: 2000Vrms
Part Status: Obsolete
Current: 15 A
Voltage: 600 V
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IPP16CN10LGXKSA1 IPP16CN10LGXKSA1 Infineon Technologies IPP16CN10L_G.pdf Description: MOSFET N-CH 100V 54A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 54A (Tc)
Rds On (Max) @ Id, Vgs: 15.7mOhm @ 54A, 10V
Power Dissipation (Max): 100W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 61µA
Supplier Device Package: PG-TO220-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4190 pF @ 50 V
auf Bestellung 13937 Stücke:
Lieferzeit 10-14 Tag (e)
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IPW60R299CPFKSA1 IPW60R299CPFKSA1 Infineon Technologies INFNS16494-1.pdf?t.download=true&u=5oefqw Description: MOSFET N-CH 600V 11A TO247-3
Produkt ist nicht verfügbar
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IPI70N10S3L12AKSA1 IPI70N10S3L12AKSA1 Infineon Technologies IPx70N10S3L-12.pdf Description: MOSFET N-CH 100V 70A TO262-3
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Rds On (Max) @ Id, Vgs: 12.1mOhm @ 70A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 83µA
Supplier Device Package: PG-TO262-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5550 pF @ 25 V
auf Bestellung 2000 Stücke:
Lieferzeit 10-14 Tag (e)
452+1.07 EUR
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IPA60R250CPXKSA1 IPA60R250CPXKSA1 Infineon Technologies IPA60R250CP.pdf Description: MOSFET N-CH 650V 12A TO220-FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 250mOhm @ 7.8A, 10V
Power Dissipation (Max): 33W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 440µA
Supplier Device Package: PG-TO220-3-31
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 100 V
auf Bestellung 21936 Stücke:
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SGP20N60HSXKSA1 SGP20N60HSXKSA1 Infineon Technologies SGx20N60HS.pdf Description: IGBT NPT 600V 36A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3.15V @ 15V, 20A
Supplier Device Package: PG-TO220-3-1
IGBT Type: NPT
Td (on/off) @ 25°C: 18ns/207ns
Switching Energy: 690µJ
Test Condition: 400V, 20A, 16Ohm, 15V
Gate Charge: 100 nC
Current - Collector (Ic) (Max): 36 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 80 A
Power - Max: 178 W
auf Bestellung 496 Stücke:
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150+3.04 EUR
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IPP100N06S205AKSA1 IPP100N06S205AKSA1 Infineon Technologies IPB%2CIPP100N06S2-05.pdf Description: MOSFET N-CH 55V 100A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 5mOhm @ 80A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PG-TO220-3-1
Part Status: Discontinued at Digi-Key
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5110 pF @ 25 V
auf Bestellung 13300 Stücke:
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IPP60R950C6XKSA1 IPP60R950C6XKSA1 Infineon Technologies IPP60R950C6_2_1.pdf?folderId=db3a30431ff98815012019af55de3f2c&fileId=db3a30432239cccd012297f4f9f644cb Description: MOSFET N-CH 600V 4.4A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.4A (Tc)
Rds On (Max) @ Id, Vgs: 950mOhm @ 1.5A, 10V
Power Dissipation (Max): 37W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 130µA
Supplier Device Package: PG-TO220-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 280 pF @ 100 V
auf Bestellung 74450 Stücke:
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454+1 EUR
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ICE2AS01 ICE2AS01 Infineon Technologies ICE2AS01%28G%29%2C%20ICE2BS01%28G%29.pdf Description: IC OFFLINE SWITCH FLYBACK 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Duty Cycle: 72%
Frequency - Switching: 100kHz
Internal Switch(s): No
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 8.5V ~ 21V
Supplier Device Package: PG-DIP-8
Fault Protection: Current Limiting, Open Loop, Over Load, Over Temperature, Over Voltage
Voltage - Start Up: 13.5 V
Control Features: Soft Start
Part Status: Obsolete
auf Bestellung 19413 Stücke:
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394+1.16 EUR
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SGP04N60XKSA1 SGP04N60XKSA1 Infineon Technologies SGx04N60.pdf Description: IGBT NPT 600V 9.4A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 4A
Supplier Device Package: PG-TO220-3-1
IGBT Type: NPT
Td (on/off) @ 25°C: 22ns/237ns
Switching Energy: 131µJ
Test Condition: 400V, 4A, 67Ohm, 15V
Gate Charge: 24 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 9.4 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 19 A
Power - Max: 50 W
auf Bestellung 9998 Stücke:
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222+2.09 EUR
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IPP085N06LGAKSA1 IPP085N06LGAKSA1 Infineon Technologies IPB,IPP085N06L_G.pdf Description: MOSFET N-CH 60V 80A TO-220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 8.5mOhm @ 80A. 10V
Vgs(th) (Max) @ Id: 2V @ 125µA
Supplier Device Package: PG-TO220-3-1
Part Status: Obsolete
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 104 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3500 pF @ 30 V
auf Bestellung 15000 Stücke:
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385+1.25 EUR
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IPB100N06S3-04 IPB%28I%2CP%29100N06S3-04.pdf
IPB100N06S3-04
Hersteller: Infineon Technologies
Description: MOSFET N-CH 55V 100A TO263-3
Packaging: Bulk
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 4.1mOhm @ 80A, 10V
Power Dissipation (Max): 214W (Tc)
Vgs(th) (Max) @ Id: 4V @ 150µA
Supplier Device Package: PG-TO263-3-2
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 314 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 14230 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 642 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
224+2.04 EUR
Mindestbestellmenge: 224
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BC858CWH6327XTSA1 Infineon-BC856SERIES_BC857SERIES_BC858SERIES_BC859SERIES_BC860SERIES-DS-v01_01-en.pdf?fileId=db3a304316f66ee8011787d183d011e9
BC858CWH6327XTSA1
Hersteller: Infineon Technologies
Description: TRANS PNP 30V 0.1A PG-SOT323
Packaging: Bulk
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V
Frequency - Transition: 250MHz
Supplier Device Package: PG-SOT323
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 250 mW
auf Bestellung 273000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
6234+0.076 EUR
Mindestbestellmenge: 6234
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MMBTA42LT1 INFNS17374-1.pdf?t.download=true&u=5oefqw
MMBTA42LT1
Hersteller: Infineon Technologies
Description: TRANS NPN 300V 0.5A SOT23-3
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Vce Saturation (Max) @ Ib, Ic: 500mV @ 2mA, 20mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 30mA, 10V
Frequency - Transition: 50MHz
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Obsolete
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 300 V
Power - Max: 225 mW
Produkt ist nicht verfügbar
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MMBT2907ALT1 mmbt2907alt1-d.pdf
MMBT2907ALT1
Hersteller: Infineon Technologies
Description: TRANS PNP 60V 0.6A SOT23-3
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max): 10nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Frequency - Transition: 200MHz
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Obsolete
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 225 mW
Produkt ist nicht verfügbar
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BCR169E6327HTSA1 bcr169series.pdf?folderId=db3a30431400ef68011406f3ddb1012e&fileId=db3a30431428a373011440313bb302d1
BCR169E6327HTSA1
Hersteller: Infineon Technologies
Description: TRANS PREBIAS PNP 50V SOT23
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 5mA, 5V
Supplier Device Package: PG-SOT23
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 200 MHz
Resistor - Base (R1): 4.7 kOhms
Resistors Included: R1 Only
auf Bestellung 942000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
6648+0.075 EUR
Mindestbestellmenge: 6648
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BFN38H6327XTSA1 bfn38.pdf?folderId=db3a30431441fb5d011449af3ad90232&fileId=db3a30431441fb5d011449b536510236
BFN38H6327XTSA1
Hersteller: Infineon Technologies
Description: TRANS NPN 300V 0.2A PG-SOT223-4
Packaging: Bulk
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 2mA, 20mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 30mA, 10V
Frequency - Transition: 70MHz
Supplier Device Package: PG-SOT223-4
Part Status: Last Time Buy
Current - Collector (Ic) (Max): 200 mA
Voltage - Collector Emitter Breakdown (Max): 300 V
Power - Max: 1.5 W
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1490+0.34 EUR
Mindestbestellmenge: 1490
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BC858AE6327HTSA1 Infineon-BC856SERIES_BC857SERIES_BC858SERIES_BC859SERIES_BC860SERIES-DS-v01_01-en.pdf?fileId=db3a304316f66ee8011787d183d011e9
BC858AE6327HTSA1
Hersteller: Infineon Technologies
Description: TRANS PNP 30V 0.1A PG-SOT23
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 125 @ 2mA, 5V
Frequency - Transition: 250MHz
Supplier Device Package: PG-SOT23
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 330 mW
auf Bestellung 404500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
8314+0.06 EUR
Mindestbestellmenge: 8314
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BCW61DE6327HTSA1 bcw61_bcx71.pdf?folderId=db3a304314dca389011541d30fa21656&fileId=db3a304314dca3890115422f2cbc173b
BCW61DE6327HTSA1
Hersteller: Infineon Technologies
Description: TRANS PNP 32V 0.1A PG-SOT23
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 550mV @ 1.25mA, 50mA
Current - Collector Cutoff (Max): 20nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 380 @ 2mA, 5V
Frequency - Transition: 250MHz
Supplier Device Package: PG-SOT23
Part Status: Last Time Buy
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 32 V
Power - Max: 330 mW
auf Bestellung 190400 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4697+0.091 EUR
Mindestbestellmenge: 4697
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BC858CE6327HTSA1 Infineon-BC856SERIES_BC857SERIES_BC858SERIES_BC859SERIES_BC860SERIES-DS-v01_01-en.pdf?fileId=db3a304316f66ee8011787d183d011e9
BC858CE6327HTSA1
Hersteller: Infineon Technologies
Description: TRANS PNP 30V 0.1A PG-SOT23
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V
Frequency - Transition: 250MHz
Supplier Device Package: PG-SOT23
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 330 mW
auf Bestellung 169480 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5333+0.091 EUR
Mindestbestellmenge: 5333
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BC858CE6433HTMA1 Infineon-BC856SERIES_BC857SERIES_BC858SERIES_BC859SERIES_BC860SERIES-DS-v01_01-en.pdf?fileId=db3a304316f66ee8011787d183d011e9
BC858CE6433HTMA1
Hersteller: Infineon Technologies
Description: TRANS PNP 30V 0.1A PG-SOT23
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V
Frequency - Transition: 250MHz
Supplier Device Package: PG-SOT23
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 330 mW
auf Bestellung 220000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
6916+0.061 EUR
Mindestbestellmenge: 6916
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BAV170E6433HTMA1 bav170series.pdf?folderId=db3a30431400ef6801141c748874044e&fileId=db3a30431400ef6801141cb8e81404e3
BAV170E6433HTMA1
Hersteller: Infineon Technologies
Description: DIODE ARRAY GP 80V 200MA PGSOT23
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 1.5 µs
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 200mA (DC)
Supplier Device Package: PG-SOT23
Operating Temperature - Junction: 150°C (Max)
Part Status: Last Time Buy
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 5 nA @ 75 V
auf Bestellung 61666 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
7776+0.062 EUR
Mindestbestellmenge: 7776
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BCP54H6327XTSA1 bcp54_bcp55_bcp56.pdf?fileId=db3a304314dca3890115475f01a81a0d
BCP54H6327XTSA1
Hersteller: Infineon Technologies
Description: TRANS NPN 45V 1A PG-SOT223-4-10
Packaging: Bulk
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 2V
Frequency - Transition: 100MHz
Supplier Device Package: PG-SOT223-4-10
Part Status: Last Time Buy
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 2 W
auf Bestellung 231000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1598+0.29 EUR
Mindestbestellmenge: 1598
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BCV26E6327HTSA1 Infineon-BCV26_BCV46-DS-v01_01-en.pdf?fileId=db3a30431441fb5d011445cddad90187
BCV26E6327HTSA1
Hersteller: Infineon Technologies
Description: TRANS PNP DARL 30V 0.5A PG-SOT23
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Darlington
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 100µA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 20000 @ 100mA, 5V
Frequency - Transition: 200MHz
Supplier Device Package: PG-SOT23
Part Status: Last Time Buy
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 360 mW
auf Bestellung 174966 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3847+0.13 EUR
Mindestbestellmenge: 3847
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BC818K40E6327HTSA1 4a-BC-817-40-E6433.pdf
BC818K40E6327HTSA1
Hersteller: Infineon Technologies
Description: TRANS NPN 25V 0.5A PG-SOT23
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 100mA, 1V
Frequency - Transition: 170MHz
Supplier Device Package: PG-SOT23
Part Status: Last Time Buy
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 25 V
Power - Max: 500 mW
auf Bestellung 312000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4743+0.091 EUR
Mindestbestellmenge: 4743
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BAS16WH6327XTSA1 bas16series.pdf?folderId=db3a30431400ef6801141b5844e103ea&fileId=db3a30431400ef6801141b93811b03ff
BAS16WH6327XTSA1
Hersteller: Infineon Technologies
Description: DIODE STD 80V 250MA PGSOT323
Packaging: Bulk
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Current - Average Rectified (Io): 250mA
Supplier Device Package: PG-SOT323
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 1 µA @ 75 V
auf Bestellung 672373 Stücke:
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Anzahl Preis
7969+0.065 EUR
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ICE3B5565PBKSA1 CoolSET-F3.pdf?folderId=db3a304412b407950112b4182a3d24f8&fileId=db3a304412b407950112b428f6ba3f30
ICE3B5565PBKSA1
Hersteller: Infineon Technologies
Description: IC OFFLINE SW FLYBACK TO220-6
Packaging: Tube
Package / Case: TO-220-6 Formed Leads
Mounting Type: Through Hole
Operating Temperature: -25°C ~ 130°C (TJ)
Duty Cycle: 72%
Frequency - Switching: 67kHz
Internal Switch(s): Yes
Voltage - Breakdown: 650V
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 8.5V ~ 21V
Supplier Device Package: PG-TO220-6-47
Fault Protection: Current Limiting, Open Loop, Over Load, Over Temperature, Over Voltage
Voltage - Start Up: 15 V
Control Features: Soft Start
Part Status: Obsolete
Power (Watts): 240 W
auf Bestellung 8300 Stücke:
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Anzahl Preis
161+2.83 EUR
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BCX6910H6327XTSA1 bcx69.pdf?folderId=db3a304314dca38901155ffc06d51dc7&fileId=db3a3043156fd573011589f3f56603ee&location=.en.product.findProductTypeByName.html_dgdl_bcx69.pdf
BCX6910H6327XTSA1
Hersteller: Infineon Technologies
Description: TRANS PNP 20V 1A PG-SOT89
Packaging: Bulk
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 85 @ 500mA, 1V
Frequency - Transition: 100MHz
Supplier Device Package: PG-SOT89
Grade: Automotive
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 20 V
Power - Max: 3 W
Qualification: AEC-Q101
auf Bestellung 26000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
960+0.5 EUR
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BFN24E6327HTSA1 bfn24_bfn26.pdf?folderId=db3a304314dca38901155ffc06d51dc7&fileId=db3a304314dca38901156a1bcc68214d
BFN24E6327HTSA1
Hersteller: Infineon Technologies
Description: TRANS NPN 250V 0.2A SOT23
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 2mA, 20mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 30mA, 10V
Frequency - Transition: 70MHz
Supplier Device Package: PG-SOT23
Part Status: Not For New Designs
Current - Collector (Ic) (Max): 200 mA
Voltage - Collector Emitter Breakdown (Max): 250 V
Power - Max: 360 mW
auf Bestellung 30000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5973+0.082 EUR
Mindestbestellmenge: 5973
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IGA30N60H3XKSA1 IGA30N60H3.pdf
IGA30N60H3XKSA1
Hersteller: Infineon Technologies
Description: IGBT TRENCH FS 600V 18A TO220-3
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 30A
Supplier Device Package: PG-TO220-3-31
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 18ns/207ns
Switching Energy: 1.17mJ
Test Condition: 400V, 30A, 10.5Ohm, 15V
Gate Charge: 165 nC
Current - Collector (Ic) (Max): 18 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 43 W
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
149+3.06 EUR
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IRGS4630DPBF IRGx4630D%28-E%29PbF.pdf
IRGS4630DPBF
Hersteller: Infineon Technologies
Description: IGBT 600V 47A 206W D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 100 ns
Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 18A
Supplier Device Package: D2PAK
Td (on/off) @ 25°C: 40ns/105ns
Switching Energy: 95µJ (on), 350µJ (off)
Test Condition: 400V, 18A, 22Ohm, 15V
Gate Charge: 35 nC
Current - Collector (Ic) (Max): 47 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 54 A
Power - Max: 206 W
auf Bestellung 250 Stücke:
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Anzahl Preis
142+3.21 EUR
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IPI80N06S405AKSA2 IPx80N06S4-05.pdf
IPI80N06S405AKSA2
Hersteller: Infineon Technologies
Description: MOSFET N-CHANNEL_55/60V
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 5.7mOhm @ 80A, 10V
Power Dissipation (Max): 107W (Tc)
Vgs(th) (Max) @ Id: 4V @ 60µA
Supplier Device Package: PG-TO262-3-1
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 81 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6500 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 12500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
278+1.75 EUR
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CY25811ZXC cy25811,12,14_8.pdf
CY25811ZXC
Hersteller: Infineon Technologies
Description: IC CLOCK GEN 3.3V SS 8-TSSOP
auf Bestellung 8525 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
229+2.11 EUR
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IPI80N06S4L05AKSA1 Infineon-I80N06S4L_05-DS-v01_00-en.pdf?fileId=db3a30431ff98815012038e65fed0d07
IPI80N06S4L05AKSA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 60V 80A TO262-3
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 5.1mOhm @ 80A, 10V
Power Dissipation (Max): 107W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 60µA
Supplier Device Package: PG-TO262-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8180 pF @ 25 V
auf Bestellung 300 Stücke:
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Anzahl Preis
300+1.36 EUR
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ICE3B2565FKLA1 CoolSET-F3.pdf?folderId=db3a304412b407950112b4182a3d24f8&fileId=db3a304412b407950112b428f6ba3f30
ICE3B2565FKLA1
Hersteller: Infineon Technologies
Description: IC OFFLINE SWITCH FLYBACK 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -25°C ~ 130°C (TJ)
Duty Cycle: 72%
Frequency - Switching: 67kHz
Internal Switch(s): Yes
Voltage - Breakdown: 650V
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 8.5V ~ 21V
Supplier Device Package: PG-DIP-8
Fault Protection: Current Limiting, Open Loop, Over Load, Over Temperature, Over Voltage
Voltage - Start Up: 15 V
Control Features: Soft Start
Part Status: Obsolete
Power (Watts): 68 W
auf Bestellung 10866 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
189+2.42 EUR
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CY7C1423TV18-267BZXC
CY7C1423TV18-267BZXC
Hersteller: Infineon Technologies
Description: IC SRAM 36MBIT PAR 165FBGA
Packaging: Bag
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 36Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, DDR II
Clock Frequency: 267 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (13x15)
Part Status: Obsolete
Memory Interface: Parallel
Memory Organization: 2M x 18
auf Bestellung 195 Stücke:
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Anzahl Preis
5+114.05 EUR
Mindestbestellmenge: 5
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ICE2QR4780ZXKLA1 Infineon-ICE2QR4780Z-DS-v02_01-en.pdf?fileId=db3a30432a7fedfc012ab20ddc3636f8
ICE2QR4780ZXKLA1
Hersteller: Infineon Technologies
Description: IC OFFLINE SWITCH FLYBACK 7DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm), 7 Leads
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Duty Cycle: 50%
Frequency - Switching: 52kHz
Internal Switch(s): Yes
Voltage - Breakdown: 800V
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 10.5V ~ 27V
Supplier Device Package: PG-DIP-7-1
Fault Protection: Current Limiting, Over Load, Over Temperature, Over Voltage
Voltage - Start Up: 18 V
Part Status: Obsolete
Power (Watts): 39 W
auf Bestellung 113956 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
235+1.93 EUR
Mindestbestellmenge: 235
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ICE3A3065PBKSA1 CoolSET-F3.pdf?folderId=db3a304412b407950112b4182a3d24f8&fileId=db3a304412b407950112b428f6ba3f30
ICE3A3065PBKSA1
Hersteller: Infineon Technologies
Description: IC OFFLINE SW FLYBACK TO220-6
Packaging: Tube
Package / Case: TO-220-6 Formed Leads
Mounting Type: Through Hole
Operating Temperature: -25°C ~ 130°C (TJ)
Duty Cycle: 72%
Frequency - Switching: 100kHz
Internal Switch(s): Yes
Voltage - Breakdown: 650V
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 8.5V ~ 21V
Supplier Device Package: PG-TO220-6-47
Fault Protection: Current Limiting, Open Loop, Over Load, Over Temperature, Over Voltage
Voltage - Start Up: 15 V
Control Features: Soft Start
Part Status: Obsolete
Power (Watts): 128 W
auf Bestellung 13000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
159+2.87 EUR
Mindestbestellmenge: 159
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ICE3A5565PBKSA1 CoolSET-F3.pdf?folderId=db3a304412b407950112b4182a3d24f8&fileId=db3a304412b407950112b428f6ba3f30
ICE3A5565PBKSA1
Hersteller: Infineon Technologies
Description: IC OFFLINE SW FLYBACK TO220-6
Packaging: Tube
Package / Case: TO-220-6 Formed Leads
Mounting Type: Through Hole
Operating Temperature: -25°C ~ 130°C (TJ)
Duty Cycle: 72%
Frequency - Switching: 100kHz
Internal Switch(s): Yes
Voltage - Breakdown: 650V
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 8.5V ~ 21V
Supplier Device Package: PG-TO220-6-47
Fault Protection: Current Limiting, Open Loop, Over Load, Over Temperature, Over Voltage
Voltage - Start Up: 15 V
Control Features: Soft Start
Part Status: Obsolete
Power (Watts): 240 W
auf Bestellung 26798 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
140+3.25 EUR
Mindestbestellmenge: 140
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CY241V8ASXC-12 CY241V08A-12.pdf
CY241V8ASXC-12
Hersteller: Infineon Technologies
Description: IC CLOCK GENERATOR 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Output: Clock
Frequency - Max: 74.25MHz
Type: Clock Generator, Fanout Distribution
Input: Clock
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 3.135V ~ 3.465V
Ratio - Input:Output: 1:2
Differential - Input:Output: No/No
Supplier Device Package: 8-SOIC
PLL: Yes with Bypass
Divider/Multiplier: Yes/No
Number of Circuits: 1
DigiKey Programmable: Not Verified
auf Bestellung 2425 Stücke:
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Anzahl Preis
417+1.21 EUR
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CY62137CV30LL-70BVXE CY62137CV%2830%2C33%29MoBL.pdf
CY62137CV30LL-70BVXE
Hersteller: Infineon Technologies
Description: IC SRAM 2MBIT PARALLEL 48VFBGA
Packaging: Tray
Package / Case: 48-VFBGA
Mounting Type: Surface Mount
Memory Size: 2Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2.7V ~ 3.3V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 48-VFBGA (6x8)
Write Cycle Time - Word, Page: 70ns
Memory Interface: Parallel
Access Time: 70 ns
Memory Organization: 128K x 16
DigiKey Programmable: Not Verified
auf Bestellung 3447 Stücke:
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Anzahl Preis
105+4.85 EUR
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CY7C1362A-166AC CY7C1360A_62A.pdf
CY7C1362A-166AC
Hersteller: Infineon Technologies
Description: IC SRAM 9MBIT 166MHZ 100LQFP
Packaging: Bag
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Memory Size: 9Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 3.135V ~ 3.6V
Technology: SRAM - Synchronous, SDR
Clock Frequency: 166 MHz
Memory Format: SRAM
Supplier Device Package: 100-TQFP (14x20)
Memory Interface: Parallel
Access Time: 3.5 ns
Memory Organization: 512K x 18
DigiKey Programmable: Not Verified
auf Bestellung 1443 Stücke:
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Anzahl Preis
44+10.84 EUR
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CY2DM1502ZXI ?utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
CY2DM1502ZXI
Hersteller: Infineon Technologies
Description: IC CLK BUFFER 1:2 1.5GHZ 8TSSOP
auf Bestellung 464 Stücke:
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Anzahl Preis
41+12.4 EUR
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CY7C1413AV18-250BZXC CY7C1411,13,15,26AV18.pdf
CY7C1413AV18-250BZXC
Hersteller: Infineon Technologies
Description: IC SRAM 36MBIT PAR 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 36Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, QDR II
Clock Frequency: 250 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (15x17)
Part Status: Obsolete
Memory Interface: Parallel
Memory Organization: 2M x 18
auf Bestellung 1065 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
7+71.72 EUR
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TLE4275S Infineon-TLE4275V50-DS-v01_07-en.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a304412b407950112b437f96169d5&ack=t
TLE4275S
Hersteller: Infineon Technologies
Description: IC REG LIN 5V 450MA TO220-5-12
Packaging: Tube
Package / Case: TO-220-5
Output Type: Fixed
Mounting Type: Through Hole
Current - Output: 450mA
Operating Temperature: -40°C ~ 150°C
Output Configuration: Positive
Current - Quiescent (Iq): 200 µA
Voltage - Input (Max): 42V
Number of Regulators: 1
Supplier Device Package: PG-TO220-5-12
Voltage - Output (Min/Fixed): 5V
Control Features: Reset
Part Status: Obsolete
PSRR: 60dB (100Hz)
Voltage Dropout (Max): 0.5V @ 300mA
Protection Features: Over Current, Over Temperature, Reverse Polarity, Short Circuit, Transient Voltage
Current - Supply (Max): 22 mA
Grade: Automotive
Qualification: AEC-Q100
auf Bestellung 12320 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
190+2.4 EUR
Mindestbestellmenge: 190
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CY7C4231V-15JXC CY7C4421%2C4201%2C11%2C21%2C31%2C41%2C51%20RevB.pdf
CY7C4231V-15JXC
Hersteller: Infineon Technologies
Description: IC FIFO SYNC 2KX9 11NS 32PLCC
Packaging: Tube
Package / Case: 32-LCC (J-Lead)
Mounting Type: Surface Mount
Function: Synchronous
Memory Size: 18K (2K x 9)
Operating Temperature: 0°C ~ 70°C
Data Rate: 66.7MHz
Access Time: 11ns
Current - Supply (Max): 20mA
Supplier Device Package: 32-PLCC (11.43x13.97)
Bus Directional: Uni-Directional
Expansion Type: Depth, Width
Programmable Flags Support: Yes
Retransmit Capability: No
FWFT Support: No
Voltage - Supply: 3 V ~ 3.6 V
DigiKey Programmable: Not Verified
auf Bestellung 1172 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
46+10.65 EUR
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IPP60R1K4C6XKSA1 DS_IPP60R1K4C6.pdf?folderId=db3a3043163797a6011637d4bae7003b&fileId=db3a30433899edae0138b2b95bbb0f7e
IPP60R1K4C6XKSA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 600V 3.2A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.2A (Tc)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 1.1A, 10V
Power Dissipation (Max): 28.4W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 90µA
Supplier Device Package: PG-TO220-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 1.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 200 pF @ 100 V
auf Bestellung 12218 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
568+0.81 EUR
Mindestbestellmenge: 568
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IPI45N06S409AKSA1 IPx45N06S4-09.pdf
IPI45N06S409AKSA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 60V 45A TO262-3
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
Rds On (Max) @ Id, Vgs: 9.4mOhm @ 45A, 10V
Power Dissipation (Max): 71W (Tc)
Vgs(th) (Max) @ Id: 4V @ 34µA
Supplier Device Package: PG-TO262-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3785 pF @ 25 V
auf Bestellung 15000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
799+0.64 EUR
Mindestbestellmenge: 799
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CY62147DV30LL-70BVXA CY62147DV30.pdf
CY62147DV30LL-70BVXA
Hersteller: Infineon Technologies
Description: IC SRAM 4MBIT PARALLEL 48VFBGA
Packaging: Tray
Package / Case: 48-VFBGA
Mounting Type: Surface Mount
Memory Size: 4Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.2V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 48-VFBGA (6x8)
Write Cycle Time - Word, Page: 70ns
Memory Interface: Parallel
Access Time: 70 ns
Memory Organization: 256K x 16
DigiKey Programmable: Not Verified
auf Bestellung 239 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
111+4.28 EUR
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CY7C25682KV18-400BZC Infineon-CY7C25682KV18_CY7C25702KV18_72-Mbit_DDR_II+_SRAM_Two-Word_Burst_Architecture_(2.5_Cycle_Read_Latency)_with_ODT-DataSheet-v07_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebde66630e8&utm_source=cypress&utm_medium=referral&ut
CY7C25682KV18-400BZC
Hersteller: Infineon Technologies
Description: IC SRAM 72MBIT PARALLEL 165FBGA
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2+344.68 EUR
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SPD03N60S5BTMA1 SPD_U03N60S5_Rev.2.4.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a304412b407950112b42c8ab0471f
SPD03N60S5BTMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 600V 3.2A TO252-3
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.2A (Tc)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 2A, 10V
Power Dissipation (Max): 38W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 135µA
Supplier Device Package: PG-TO252-3-11
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 420 pF @ 25 V
auf Bestellung 11526 Stücke:
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383+1.19 EUR
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CYD02S36V18-200BBC
CYD02S36V18-200BBC
Hersteller: Infineon Technologies
Description: IC SRAM 2MBIT 200MHZ 256FBGA
auf Bestellung 307 Stücke:
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3+187.27 EUR
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IPS65R1K0CEAKMA1 Infineon-IPS65R1K0CE-DS-v02_00-EN.pdf?fileId=5546d46249be182c0149c7a3c90c1e8a
IPS65R1K0CEAKMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 650V 4.3A TO251
Packaging: Tube
Package / Case: TO-251-3 Stub Leads, IPak
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.3A (Tc)
Rds On (Max) @ Id, Vgs: 1Ohm @ 1.5A, 10V
Power Dissipation (Max): 37W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 200µA
Supplier Device Package: TO-251
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 15.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 328 pF @ 100 V
auf Bestellung 1898 Stücke:
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Anzahl Preis
1154+0.42 EUR
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IPI60R299CPXKSA1 IPI60R299CP_rev2.0.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a304412b407950112b42e79d249d3
IPI60R299CPXKSA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 600V 11A TO262-3
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 299mOhm @ 6.6A, 10V
Power Dissipation (Max): 96W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 440µA
Supplier Device Package: PG-TO262-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 100 V
auf Bestellung 500 Stücke:
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Anzahl Preis
231+2.11 EUR
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CYD02S36V18-167BBC
CYD02S36V18-167BBC
Hersteller: Infineon Technologies
Description: IC SRAM 2MBIT PARALLEL 256FBGA
auf Bestellung 117 Stücke:
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Anzahl Preis
4+155.07 EUR
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CY7C4261-10JXI CY7C4261,71_RevI.pdf
CY7C4261-10JXI
Hersteller: Infineon Technologies
Description: IC SYNC FIFO MEM 16KX9 32-PLCC
Packaging: Tube
Package / Case: 32-LCC (J-Lead)
Mounting Type: Surface Mount
Function: Synchronous
Memory Size: 144K (16K x 9)
Operating Temperature: -40°C ~ 85°C
Data Rate: 100MHz
Access Time: 8ns
Current - Supply (Max): 40mA
Supplier Device Package: 32-PLCC (11.43x13.97)
Bus Directional: Uni-Directional
Expansion Type: Depth, Width
Programmable Flags Support: Yes
Retransmit Capability: No
FWFT Support: No
Part Status: Obsolete
Voltage - Supply: 4.5 V ~ 5.5 V
auf Bestellung 2071 Stücke:
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14+36.22 EUR
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IPI80N04S204AKSA2 IPx80N04S2-04.pdf
IPI80N04S204AKSA2
Hersteller: Infineon Technologies
Description: MOSFET N-CH 40V 80A TO262-3
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 3.7mOhm @ 80A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PG-TO262-3-1
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5300 pF @ 25 V
auf Bestellung 296 Stücke:
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296+1.74 EUR
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IDH06S60CAKSA1 IDH06S60C.pdf
IDH06S60CAKSA1
Hersteller: Infineon Technologies
Description: DIODE SIL CARB 600V 6A TO220-2-2
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 280pF @ 1V, 1MHz
Current - Average Rectified (Io): 6A
Supplier Device Package: PG-TO220-2-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 6 A
Current - Reverse Leakage @ Vr: 80 µA @ 600 V
auf Bestellung 8468 Stücke:
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Anzahl Preis
135+3.53 EUR
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IRF1104LPBF irf1104spbf.pdf?fileId=5546d462533600a4015355da952e1897
IRF1104LPBF
Hersteller: Infineon Technologies
Description: MOSFET N-CH 40V 100A TO262
Produkt ist nicht verfügbar
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IRS2541PBF IRS254%280%2C1%29%28S%29PbF.pdf
IRS2541PBF
Hersteller: Infineon Technologies
Description: IC LED DRIVER CTRLR PWM 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Number of Outputs: 1
Frequency: 500kHz
Type: DC DC Controller
Operating Temperature: -25°C ~ 150°C (TJ)
Internal Switch(s): No
Topology: Step-Down (Buck)
Supplier Device Package: 8-PDIP
Dimming: PWM
Voltage - Supply (Min): 9V
Voltage - Supply (Max): 15.6V
auf Bestellung 300 Stücke:
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Anzahl Preis
188+2.6 EUR
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IRAM136-1561A2 fundamentals-of-power-semiconductors
Hersteller: Infineon Technologies
Description: IC MOD PWR HYBRID 600V 15A MOTOR
Packaging: Tube
Package / Case: 29-PowerSSIP Module, 21 Leads, Formed Leads
Mounting Type: Through Hole
Type: IGBT
Configuration: 3 Phase
Voltage - Isolation: 2000Vrms
Part Status: Obsolete
Current: 15 A
Voltage: 600 V
auf Bestellung 54 Stücke:
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Anzahl Preis
25+19.79 EUR
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IPP16CN10LGXKSA1 IPP16CN10L_G.pdf
IPP16CN10LGXKSA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 100V 54A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 54A (Tc)
Rds On (Max) @ Id, Vgs: 15.7mOhm @ 54A, 10V
Power Dissipation (Max): 100W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 61µA
Supplier Device Package: PG-TO220-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4190 pF @ 50 V
auf Bestellung 13937 Stücke:
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Anzahl Preis
289+1.58 EUR
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IPW60R299CPFKSA1 INFNS16494-1.pdf?t.download=true&u=5oefqw
IPW60R299CPFKSA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 600V 11A TO247-3
Produkt ist nicht verfügbar
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IPI70N10S3L12AKSA1 IPx70N10S3L-12.pdf
IPI70N10S3L12AKSA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 100V 70A TO262-3
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Rds On (Max) @ Id, Vgs: 12.1mOhm @ 70A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 83µA
Supplier Device Package: PG-TO262-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5550 pF @ 25 V
auf Bestellung 2000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
452+1.07 EUR
Mindestbestellmenge: 452
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IPA60R250CPXKSA1 IPA60R250CP.pdf
IPA60R250CPXKSA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 650V 12A TO220-FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 250mOhm @ 7.8A, 10V
Power Dissipation (Max): 33W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 440µA
Supplier Device Package: PG-TO220-3-31
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 100 V
auf Bestellung 21936 Stücke:
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Anzahl Preis
211+2.31 EUR
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SGP20N60HSXKSA1 SGx20N60HS.pdf
SGP20N60HSXKSA1
Hersteller: Infineon Technologies
Description: IGBT NPT 600V 36A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3.15V @ 15V, 20A
Supplier Device Package: PG-TO220-3-1
IGBT Type: NPT
Td (on/off) @ 25°C: 18ns/207ns
Switching Energy: 690µJ
Test Condition: 400V, 20A, 16Ohm, 15V
Gate Charge: 100 nC
Current - Collector (Ic) (Max): 36 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 80 A
Power - Max: 178 W
auf Bestellung 496 Stücke:
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Anzahl Preis
150+3.04 EUR
Mindestbestellmenge: 150
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IPP100N06S205AKSA1 IPB%2CIPP100N06S2-05.pdf
IPP100N06S205AKSA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 55V 100A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 5mOhm @ 80A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PG-TO220-3-1
Part Status: Discontinued at Digi-Key
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5110 pF @ 25 V
auf Bestellung 13300 Stücke:
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Anzahl Preis
293+1.73 EUR
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IPP60R950C6XKSA1 IPP60R950C6_2_1.pdf?folderId=db3a30431ff98815012019af55de3f2c&fileId=db3a30432239cccd012297f4f9f644cb
IPP60R950C6XKSA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 600V 4.4A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.4A (Tc)
Rds On (Max) @ Id, Vgs: 950mOhm @ 1.5A, 10V
Power Dissipation (Max): 37W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 130µA
Supplier Device Package: PG-TO220-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 280 pF @ 100 V
auf Bestellung 74450 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
454+1 EUR
Mindestbestellmenge: 454
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ICE2AS01 ICE2AS01%28G%29%2C%20ICE2BS01%28G%29.pdf
ICE2AS01
Hersteller: Infineon Technologies
Description: IC OFFLINE SWITCH FLYBACK 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Duty Cycle: 72%
Frequency - Switching: 100kHz
Internal Switch(s): No
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 8.5V ~ 21V
Supplier Device Package: PG-DIP-8
Fault Protection: Current Limiting, Open Loop, Over Load, Over Temperature, Over Voltage
Voltage - Start Up: 13.5 V
Control Features: Soft Start
Part Status: Obsolete
auf Bestellung 19413 Stücke:
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Anzahl Preis
394+1.16 EUR
Mindestbestellmenge: 394
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SGP04N60XKSA1 SGx04N60.pdf
SGP04N60XKSA1
Hersteller: Infineon Technologies
Description: IGBT NPT 600V 9.4A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 4A
Supplier Device Package: PG-TO220-3-1
IGBT Type: NPT
Td (on/off) @ 25°C: 22ns/237ns
Switching Energy: 131µJ
Test Condition: 400V, 4A, 67Ohm, 15V
Gate Charge: 24 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 9.4 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 19 A
Power - Max: 50 W
auf Bestellung 9998 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
222+2.09 EUR
Mindestbestellmenge: 222
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IPP085N06LGAKSA1 IPB,IPP085N06L_G.pdf
IPP085N06LGAKSA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 60V 80A TO-220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 8.5mOhm @ 80A. 10V
Vgs(th) (Max) @ Id: 2V @ 125µA
Supplier Device Package: PG-TO220-3-1
Part Status: Obsolete
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 104 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3500 pF @ 30 V
auf Bestellung 15000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
385+1.25 EUR
Mindestbestellmenge: 385
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