Produkte > INFINEON TECHNOLOGIES > Alle Produkte des Herstellers INFINEON TECHNOLOGIES (121485) > Seite 326 nach 2025
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TC264D40F200WBCKXUMA1 | Infineon Technologies |
Description: IC MCU 32BIT 2.5MB FLASH 144LQFPDigiKey Programmable: Not Verified Number of I/O: 88 Supplier Device Package: PG-LQFP-144-22 Peripherals: DMA, WDT Connectivity: ASC, CANbus, Ethernet, FlexRay, HSSL, I2C, LINbus, MSC, PSI5, QSPI, SENT Voltage - Supply (Vcc/Vdd): 3.3V, 5V Core Size: 32-Bit Dual-Core Data Converters: A/D 40x12b, 3 x Sigma-Delta Core Processor: TriCore™ EEPROM Size: 96K x 8 Program Memory Type: FLASH Oscillator Type: External Operating Temperature: -40°C ~ 125°C (TA) RAM Size: 240K x 8 Program Memory Size: 2.5MB (2.5M x 8) Speed: 200MHz Mounting Type: Surface Mount Package / Case: 144-LQFP Exposed Pad Packaging: Cut Tape (CT) |
auf Bestellung 950 Stücke: Lieferzeit 10-14 Tag (e) |
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TC234LP32F200FACKXUMA1 | Infineon Technologies |
Description: IC MCU 32BIT 2MB FLASH 144TQFPDigiKey Programmable: Not Verified Number of I/O: 120 Part Status: Active Supplier Device Package: PG-TQFP-144-27 Peripherals: DMA, WDT Connectivity: CANbus, FlexRay, LINbus, QSPI Voltage - Supply (Vcc/Vdd): 3.3V Core Size: 32-Bit Data Converters: A/D 24x12b Core Processor: TriCore™ EEPROM Size: 128K x 8 Program Memory Type: FLASH Oscillator Type: External Operating Temperature: -40°C ~ 125°C (TA) RAM Size: 192K x 8 Program Memory Size: 2MB (2M x 8) Speed: 200MHz Mounting Type: Surface Mount Package / Case: 144-LQFP Exposed Pad Packaging: Cut Tape (CT) |
auf Bestellung 380 Stücke: Lieferzeit 10-14 Tag (e) |
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1ED44176N01FXUMA1 | Infineon Technologies |
Description: IC GATE DRVR LOW-SIDE 8SOICDigiKey Programmable: Not Verified Part Status: Active Current - Peak Output (Source, Sink): 800mA, 1.75A Logic Voltage - VIL, VIH: 1.2V, 1.7V Gate Type: IGBT Number of Drivers: 1 Driven Configuration: Low-Side Channel Type: Single Rise / Fall Time (Typ): 50ns, 25ns Supplier Device Package: 8-SOIC Input Type: CMOS, TTL Voltage - Supply: 12.7V ~ 20V Operating Temperature: -40°C ~ 125°C (TA) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Cut Tape (CT) |
auf Bestellung 2883 Stücke: Lieferzeit 10-14 Tag (e) |
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TC275T64F200WDCKXUMA1 | Infineon Technologies |
Description: IC MCU 32BIT 4MB FLASH 176LQFPSupplier Device Package: PG-LQFP-176-22 Peripherals: DMA, WDT Connectivity: ASC, CANbus, Ethernet, FlexRay, HSSL, I2C, LINbus, MSC, PSI5, QSPI, SENT Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V Core Size: 32-Bit Tri-Core Data Converters: A/D 40x12b, 6 x Sigma-Delta Core Processor: TriCore™ EEPROM Size: 64K x 8 Program Memory Type: FLASH Oscillator Type: External Operating Temperature: -40°C ~ 125°C (TA) RAM Size: 472K x 8 Program Memory Size: 4MB (4M x 8) Speed: 200MHz Mounting Type: Surface Mount Package / Case: 176-LQFP Exposed Pad Packaging: Cut Tape (CT) DigiKey Programmable: Not Verified Number of I/O: 112 Part Status: Active |
auf Bestellung 495 Stücke: Lieferzeit 10-14 Tag (e) |
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IRS2008MTRPBFAUMA1 | Infineon Technologies |
Description: IC GATE DRVR HALF-BRIDGE 14MLPQPart Status: Obsolete DigiKey Programmable: Not Verified Current - Peak Output (Source, Sink): 290mA, 600mA Logic Voltage - VIL, VIH: 0.8V, 2.5V Gate Type: IGBT, MOSFET (N-Channel) Number of Drivers: 1 Driven Configuration: Half-Bridge Channel Type: Synchronous Rise / Fall Time (Typ): 70ns, 30ns Supplier Device Package: 14-MLPQ (4x4) High Side Voltage - Max (Bootstrap): 200 V Input Type: CMOS Voltage - Supply: 10V ~ 20V Operating Temperature: -40°C ~ 125°C (TA) Mounting Type: Surface Mount Package / Case: 14-VFQFN Exposed Pad Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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IRS2008MTRPBFAUMA1 | Infineon Technologies |
Description: IC GATE DRVR HALF-BRIDGE 14MLPQPart Status: Obsolete Current - Peak Output (Source, Sink): 290mA, 600mA Logic Voltage - VIL, VIH: 0.8V, 2.5V Gate Type: IGBT, MOSFET (N-Channel) Number of Drivers: 1 Driven Configuration: Half-Bridge Channel Type: Synchronous Rise / Fall Time (Typ): 70ns, 30ns Supplier Device Package: 14-MLPQ (4x4) High Side Voltage - Max (Bootstrap): 200 V Input Type: CMOS Voltage - Supply: 10V ~ 20V Operating Temperature: -40°C ~ 125°C (TA) Mounting Type: Surface Mount Package / Case: 14-VFQFN Exposed Pad Packaging: Cut Tape (CT) DigiKey Programmable: Not Verified |
auf Bestellung 2 Stücke: Lieferzeit 10-14 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| SIDC14D60E6X7SA1 | Infineon Technologies |
Description: DIODE STANDARD 600V 30A DIE Packaging: Bulk Package / Case: Die Mounting Type: Surface Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Current - Average Rectified (Io): 30A Supplier Device Package: Die Operating Temperature - Junction: -55°C ~ 150°C Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 30 A Current - Reverse Leakage @ Vr: 27 µA @ 600 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| SIDC08D60C8X1SA3 | Infineon Technologies |
Description: DIODE GEN PURP 600V 30A DIETechnology: Standard Speed: Standard Recovery >500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: Die Packaging: Bulk Current - Reverse Leakage @ Vr: 27 µA @ 600 V Voltage - Forward (Vf) (Max) @ If: 1.95 V @ 30 A Voltage - DC Reverse (Vr) (Max): 600 V Part Status: Active Operating Temperature - Junction: -40°C ~ 175°C Supplier Device Package: Die Current - Average Rectified (Io): 30A |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| SIGC25T60SNCX7SA1 | Infineon Technologies |
Description: IGBT 3 CHIP 600V WAFER IGBT Type: NPT Supplier Device Package: Die Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 30A Input Type: Standard Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: Die Packaging: Bulk Current - Collector Pulsed (Icm): 90 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector (Ic) (Max): 30 A Part Status: Obsolete Test Condition: 400V, 30A, 11Ohm, 15V Td (on/off) @ 25°C: 44ns/324ns |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| SIDC14D60C8X1SA1 | Infineon Technologies |
Description: DIODE STANDARD 600V 50A DIEPackaging: Bulk Package / Case: Die Mounting Type: Surface Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Current - Average Rectified (Io): 50A Supplier Device Package: Die Operating Temperature - Junction: -40°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.9 V @ 50 A Current - Reverse Leakage @ Vr: 27 µA @ 600 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| SIDC04D60F6X7SA1 | Infineon Technologies |
Description: DIODE STANDARD 600V 9A DIE Current - Reverse Leakage @ Vr: 27 µA @ 600 V Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 9 A Voltage - DC Reverse (Vr) (Max): 600 V Operating Temperature - Junction: -40°C ~ 175°C Supplier Device Package: Die Current - Average Rectified (Io): 9A Technology: Standard Speed: Standard Recovery >500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: Die Packaging: Bulk |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| SIGC61T60NCX1SA1 | Infineon Technologies |
Description: IGBT 3 CHIP 600V WAFER |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| SIDC06D60E6X7SA1 | Infineon Technologies |
Description: DIODE STANDARD 600V 10A DIE Packaging: Bulk Package / Case: Die Mounting Type: Surface Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Current - Average Rectified (Io): 10A Supplier Device Package: Die Operating Temperature - Junction: -55°C ~ 150°C Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 10 A Current - Reverse Leakage @ Vr: 27 µA @ 600 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
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SIGC81T60NCX7SA1 | Infineon Technologies |
Description: IGBT 3 CHIP 600V WAFER Current - Collector Pulsed (Icm): 300 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector (Ic) (Max): 100 A Part Status: Obsolete Test Condition: 300V, 100A, 2.2Ohm, 15V Td (on/off) @ 25°C: 95ns/200ns IGBT Type: NPT Supplier Device Package: Die Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 100A Input Type: Standard Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: Die Packaging: Bulk |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| SIDC14D60F6X7SA1 | Infineon Technologies |
Description: DIODE STANDARD 600V 45A DIE Packaging: Bulk Package / Case: Die Mounting Type: Surface Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Current - Average Rectified (Io): 45A Supplier Device Package: Die Operating Temperature - Junction: -40°C ~ 175°C Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 45 A Current - Reverse Leakage @ Vr: 27 µA @ 600 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| SIGC42T60NCX7SA1 | Infineon Technologies |
Description: IGBT 3 CHIP 600V WAFER Current - Collector Pulsed (Icm): 150 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector (Ic) (Max): 50 A Part Status: Obsolete Test Condition: 300V, 50A, 3.3Ohm, 15V Td (on/off) @ 25°C: 43ns/130ns IGBT Type: NPT Supplier Device Package: Die Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 50A Input Type: Standard Operating Temperature: -55°C ~ 150°C Mounting Type: Surface Mount Package / Case: Die Packaging: Bulk |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| SIDC06D60F6X1SA4 | Infineon Technologies |
Description: DIODE STANDARD 600V 15A DIEPackaging: Bulk Package / Case: Die Mounting Type: Surface Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Current - Average Rectified (Io): 15A Supplier Device Package: Die Operating Temperature - Junction: -40°C ~ 175°C Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 15 A Current - Reverse Leakage @ Vr: 27 µA @ 600 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| SIDC14D60F6X1SA4 | Infineon Technologies |
Description: DIODE STANDARD 600V 45A DIEPackaging: Bulk Package / Case: Die Mounting Type: Surface Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Current - Average Rectified (Io): 45A Supplier Device Package: Die Operating Temperature - Junction: -40°C ~ 175°C Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 45 A Current - Reverse Leakage @ Vr: 27 µA @ 600 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| SIDC08D60C8X7SA1 | Infineon Technologies |
Description: DIODE GEN PURP 600V 30A DIE Current - Reverse Leakage @ Vr: 27 µA @ 600 V Voltage - Forward (Vf) (Max) @ If: 1.95 V @ 30 A Voltage - DC Reverse (Vr) (Max): 600 V Part Status: Active Operating Temperature - Junction: -40°C ~ 175°C Supplier Device Package: Die Current - Average Rectified (Io): 30A Technology: Standard Speed: Standard Recovery >500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: Die Packaging: Bulk |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| SIDC14D60C8X7SA1 | Infineon Technologies |
Description: DIODE GEN PURP 600V 50A DIE Voltage - DC Reverse (Vr) (Max): 600 V Part Status: Active Operating Temperature - Junction: -40°C ~ 175°C Supplier Device Package: Die Current - Average Rectified (Io): 50A Technology: Standard Speed: Standard Recovery >500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: Die Packaging: Bulk Current - Reverse Leakage @ Vr: 27 µA @ 600 V Voltage - Forward (Vf) (Max) @ If: 1.9 V @ 50 A |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
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SIDC06D65C8X1SA1 | Infineon Technologies |
Description: DIODE STANDARD 650V 20A DIEPackaging: Bulk Package / Case: Die Mounting Type: Surface Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Current - Average Rectified (Io): 20A Supplier Device Package: Die Operating Temperature - Junction: -40°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.87 V @ 20 A Current - Reverse Leakage @ Vr: 240 nA @ 650 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| SIGC42T60SNCX7SA1 | Infineon Technologies |
Description: IGBT 3 CHIP 600V WAFER Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 50A Input Type: Standard Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: Die Packaging: Bulk Current - Collector Pulsed (Icm): 150 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector (Ic) (Max): 50 A Test Condition: 400V, 50A, 6.8Ohm, 15V Td (on/off) @ 25°C: 57ns/380ns IGBT Type: NPT Supplier Device Package: Die |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| SIDC08D60C8X1SA2 | Infineon Technologies |
Description: DIODE GEN PURP 600V 30A DIECurrent - Reverse Leakage @ Vr: 27 µA @ 600 V Voltage - Forward (Vf) (Max) @ If: 1.95 V @ 30 A Voltage - DC Reverse (Vr) (Max): 600 V Part Status: Active Operating Temperature - Junction: -40°C ~ 175°C Supplier Device Package: Die Current - Average Rectified (Io): 30A Technology: Standard Speed: Standard Recovery >500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: Die Packaging: Bulk |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| SIDC06D60F6X7SA1 | Infineon Technologies |
Description: DIODE STANDARD 600V 15A DIE Packaging: Bulk Package / Case: Die Mounting Type: Surface Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Current - Average Rectified (Io): 15A Supplier Device Package: Die Operating Temperature - Junction: -40°C ~ 175°C Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 15 A Current - Reverse Leakage @ Vr: 27 µA @ 600 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| SIDC06D60F6X1SA2 | Infineon Technologies |
Description: DIODE STANDARD 600V 15A DIEPackaging: Bulk Package / Case: Die Mounting Type: Surface Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Current - Average Rectified (Io): 15A Supplier Device Package: Die Operating Temperature - Junction: -40°C ~ 175°C Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 15 A Current - Reverse Leakage @ Vr: 27 µA @ 600 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| SIDC06D60E6X1SA1 | Infineon Technologies |
Description: DIODE STANDARD 600V 10A DIEPackaging: Bulk Package / Case: Die Mounting Type: Surface Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Current - Average Rectified (Io): 10A Supplier Device Package: Die Operating Temperature - Junction: -55°C ~ 150°C Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 10 A Current - Reverse Leakage @ Vr: 27 µA @ 600 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| SIDC14D60E6X1SA4 | Infineon Technologies |
Description: DIODE STANDARD 600V 30A DIEPackaging: Bulk Package / Case: Die Mounting Type: Surface Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Current - Average Rectified (Io): 30A Supplier Device Package: Die Operating Temperature - Junction: -55°C ~ 150°C Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 30 A Current - Reverse Leakage @ Vr: 27 µA @ 600 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| SIGC25T60UNX7SA1 | Infineon Technologies | Description: IGBT 3 CHIP 600V WAFER |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
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SIGC61T60NCX7SA1 | Infineon Technologies |
Description: IGBT 3 CHIP 600V WAFER Current - Collector Pulsed (Icm): 225 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector (Ic) (Max): 75 A Test Condition: 300V, 75A, 3Ohm, 15V Td (on/off) @ 25°C: 65ns/170ns IGBT Type: NPT Supplier Device Package: Die Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 75A Input Type: Standard Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: Die Packaging: Bulk |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| SIDC14D60E6X1SA3 | Infineon Technologies |
Description: DIODE STANDARD 600V 30A DIEPackaging: Bulk Package / Case: Die Mounting Type: Surface Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Current - Average Rectified (Io): 30A Supplier Device Package: Die Operating Temperature - Junction: -55°C ~ 150°C Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 30 A Current - Reverse Leakage @ Vr: 27 µA @ 600 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| SIDC06D60E6X1SA4 | Infineon Technologies |
Description: DIODE STANDARD 600V 10A DIEPackaging: Bulk Package / Case: Die Mounting Type: Surface Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Current - Average Rectified (Io): 10A Supplier Device Package: Die Operating Temperature - Junction: -55°C ~ 150°C Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 10 A Current - Reverse Leakage @ Vr: 27 µA @ 600 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| SIDC04D60F6X1SA2 | Infineon Technologies |
Description: DIODE STANDARD 600V 9A DIEPackaging: Bulk Current - Reverse Leakage @ Vr: 27 µA @ 600 V Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 9 A Voltage - DC Reverse (Vr) (Max): 600 V Operating Temperature - Junction: -40°C ~ 175°C Supplier Device Package: Die Current - Average Rectified (Io): 9A Technology: Standard Speed: Standard Recovery >500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: Die |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| SIDC14D60C8X1SA3 | Infineon Technologies |
Description: DIODE GEN PURP 600V 50A DIECurrent - Reverse Leakage @ Vr: 27 µA @ 600 V Voltage - Forward (Vf) (Max) @ If: 1.9 V @ 50 A Voltage - DC Reverse (Vr) (Max): 600 V Part Status: Active Operating Temperature - Junction: -40°C ~ 175°C Supplier Device Package: Die Current - Average Rectified (Io): 50A Technology: Standard Speed: Standard Recovery >500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: Die Packaging: Bulk |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| SIDC14D60F6X1SA3 | Infineon Technologies |
Description: DIODE STANDARD 600V 45A DIEPackaging: Bulk Package / Case: Die Mounting Type: Surface Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Current - Average Rectified (Io): 45A Supplier Device Package: Die Operating Temperature - Junction: -40°C ~ 175°C Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 45 A Current - Reverse Leakage @ Vr: 27 µA @ 600 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
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SIDC26D60C8X1SA1 | Infineon Technologies |
Description: DIODE STANDARD 600V 100A DIEPackaging: Bulk Package / Case: Die Mounting Type: Surface Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Current - Average Rectified (Io): 100A Supplier Device Package: Die Operating Temperature - Junction: -40°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.9 V @ 100 A Current - Reverse Leakage @ Vr: 27 µA @ 600 V Current Coupled to Voltage - Forward (Vf) (Max) @ If: 100 Voltage Coupled to Current - Reverse Leakage @ Vr: 600 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| SIDC08D60C8X1SA1 | Infineon Technologies |
Description: DIODE GEN PURP 600V 30A DIECurrent - Reverse Leakage @ Vr: 27 µA @ 600 V Voltage - Forward (Vf) (Max) @ If: 1.95 V @ 30 A Voltage - DC Reverse (Vr) (Max): 600 V Part Status: Active Operating Temperature - Junction: -40°C ~ 175°C Supplier Device Package: Die Current - Average Rectified (Io): 30A Technology: Standard Speed: Standard Recovery >500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: Die Packaging: Bulk |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| SIDC04D60F6X1SA4 | Infineon Technologies |
Description: DIODE STANDARD 600V 9A DIEMounting Type: Surface Mount Package / Case: Die Packaging: Bulk Current - Reverse Leakage @ Vr: 27 µA @ 600 V Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 9 A Voltage - DC Reverse (Vr) (Max): 600 V Operating Temperature - Junction: -40°C ~ 175°C Supplier Device Package: Die Current - Average Rectified (Io): 9A Technology: Standard Speed: Standard Recovery >500ns, > 200mA (Io) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| SIGC25T60NCX7SA1 | Infineon Technologies | Description: IGBT 3 CHIP 600V WAFER |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| SIDC14D60F6X1SA1 | Infineon Technologies |
Description: DIODE STANDARD 600V 45A DIEPackaging: Bulk Package / Case: Die Mounting Type: Surface Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Current - Average Rectified (Io): 45A Supplier Device Package: Die Operating Temperature - Junction: -40°C ~ 175°C Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 45 A Current - Reverse Leakage @ Vr: 27 µA @ 600 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
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SIGC81T60SNCX7SA1 | Infineon Technologies |
Description: IGBT 3 CHIP 600V WAFER Current - Collector Pulsed (Icm): 300 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector (Ic) (Max): 100 A Part Status: Obsolete Test Condition: 400V, 100A, 3.3Ohm, 15V Td (on/off) @ 25°C: 65ns/450ns IGBT Type: NPT Supplier Device Package: Die Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 100A Input Type: Standard Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: Die Packaging: Bulk |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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SIDC14D60C8X1SA2 | Infineon Technologies |
Description: DIODE STANDARD 600V 50A DIEPackaging: Bulk Package / Case: Die Mounting Type: Surface Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Current - Average Rectified (Io): 50A Supplier Device Package: Die Operating Temperature - Junction: -40°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.9 V @ 50 A Current - Reverse Leakage @ Vr: 27 µA @ 600 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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REFICL5102HVU150WTOBO1 | Infineon Technologies |
Description: EVAL BOARD FOR ICL5102HVContents: Board(s) Part Status: Active Outputs and Type: 1 Non-Isolated Output Current - Output / Channel: 3A Voltage - Input: 277 ~ 528 VAC Voltage - Output: 17V ~ 48V Packaging: Box Supplied Contents: Board(s) Utilized IC / Part: ICL5102HV |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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FS380R12A6T4BBPSA1 | Infineon Technologies |
Description: IGBT MODULE 1200V 380AInput Capacitance (Cies) @ Vce: 19 nF @ 25 V Current - Collector Cutoff (Max): 1 mA Current - Collector (Ic) (Max): 380 A Part Status: Active IGBT Type: Trench Field Stop Supplier Device Package: AG-HYBRIDD-2 NTC Thermistor: Yes Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 250A Operating Temperature: -40°C ~ 150°C (TJ) Configuration: Three Phase Inverter Input: Standard Mounting Type: Chassis Mount Package / Case: Module Packaging: Tray Power - Max: 870 W Voltage - Collector Emitter Breakdown (Max): 1200 V |
auf Bestellung 6 Stücke: Lieferzeit 10-14 Tag (e) |
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TLE92108232QXXUMA1 | Infineon Technologies |
Description: IC GATE DRVR HALF-BRIDGE 48VFQFNSupplier Device Package: PG-VQFN-48-31 High Side Voltage - Max (Bootstrap): 950 V Input Type: Non-Inverting Voltage - Supply: 6V ~ 28V Mounting Type: Surface Mount Package / Case: 48-VFQFN Exposed Pad Packaging: Tape & Reel (TR) Part Status: Active Current - Peak Output (Source, Sink): 100mA, 100mA Gate Type: IGBT, MOSFET (N-Channel) Number of Drivers: 2 Driven Configuration: Half-Bridge Channel Type: Synchronous DigiKey Programmable: Not Verified |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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FS950R08A6P2BBPSA1 | Infineon Technologies |
Description: IGBT MOD 750V 950A AG-HYBRIDD-2Packaging: Tray Package / Case: Module Mounting Type: Chassis Mount Input: Standard Configuration: Three Phase Inverter Operating Temperature: -40°C ~ 175°C (TJ) Vce(on) (Max) @ Vge, Ic: 1.35V @ 15V, 450A NTC Thermistor: Yes Supplier Device Package: AG-HYBRIDD-2 IGBT Type: Trench Field Stop Part Status: Active Current - Collector (Ic) (Max): 950 A Voltage - Collector Emitter Breakdown (Max): 750 V Power - Max: 870 W Current - Collector Cutoff (Max): 1 mA Input Capacitance (Cies) @ Vce: 80 nF @ 50 V |
auf Bestellung 3 Stücke: Lieferzeit 10-14 Tag (e) |
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TLS715B0TSNPBOARDTOBO1 | Infineon Technologies |
Description: EVAL TLS715B0NAV50 LDO Channels per IC: 1 - Single Supplied Contents: Board(s) Utilized IC / Part: TLS715B0NAV50 Board Type: Fully Populated Regulator Type: Positive Fixed Current - Output: 150mA Voltage - Input: 4V ~ 40V Voltage - Output: 5V Packaging: Box |
auf Bestellung 2 Stücke: Lieferzeit 10-14 Tag (e) |
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TLE9210823QXAPPKITTOBO1 | Infineon Technologies |
Description: EVAL MOSFET DRVR TLE92018 MOTIXPart Status: Active Supplied Contents: Board(s) Utilized IC / Part: TLE9210823 Type: Power Management Function: Gate Driver Packaging: Box |
auf Bestellung 8 Stücke: Lieferzeit 10-14 Tag (e) |
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EVALM5E1B1245NSICTOBO1 | Infineon Technologies |
Description: EVAL COOLSIC MOSFET MOTOR DRIVERSupplied Contents: Board(s) Utilized IC / Part: 1EDI20H12AH Type: Power Management Function: Gate Driver Packaging: Box Contents: Board(s) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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TLE92108231QXXUMA1 | Infineon Technologies |
Description: IC GATE DRVR HALF-BRIDGE 48VFQFNPart Status: Active Current - Peak Output (Source, Sink): 100mA, 100mA Gate Type: IGBT, N-Channel MOSFET Number of Drivers: 2 Driven Configuration: Half-Bridge Channel Type: Synchronous Supplier Device Package: PG-VQFN-48-31 High Side Voltage - Max (Bootstrap): 950 V Input Type: Non-Inverting Voltage - Supply: 6V ~ 28V Mounting Type: Surface Mount DigiKey Programmable: Not Verified Package / Case: 48-VFQFN Exposed Pad Packaging: Tape & Reel (TR) |
auf Bestellung 7500 Stücke: Lieferzeit 10-14 Tag (e) |
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ICL5102HVXUMA1 | Infineon Technologies |
Description: IC LED DRIVER OFFL NO 19DSOPackaging: Tape & Reel (TR) Package / Case: 20-SOIC (0.295", 7.50mm Width), 19 Leads Mounting Type: Surface Mount Number of Outputs: 1 Frequency: 1.3MHz Type: AC DC Offline Switcher Operating Temperature: -40°C ~ 150°C (TJ) Applications: Lighting Internal Switch(s): No Topology: Half-Bridge Supplier Device Package: PG-DSO-19-1 Dimming: No Voltage - Supply (Min): 8.5V Voltage - Supply (Max): 18V Part Status: Active |
auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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TLD22522EPXUMA1 | Infineon Technologies |
Description: IC LED DRVR CTRLR PWM 14TSDSOGrade: Automotive Voltage - Supply (Max): 18V Voltage - Supply (Min): 8.5V Dimming: PWM Supplier Device Package: PG-TSDSO-14 Topology: Switched Capacitor (Charge Pump) Internal Switch(s): No Current - Output / Channel: 120mA Applications: Lighting Operating Temperature: -40°C ~ 150°C (TJ) Type: DC DC Controller Number of Outputs: 2 Mounting Type: Surface Mount Package / Case: 14-TSSOP (0.154", 3.90mm Width) Exposed Pad Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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TLD22522EPXUMA1 | Infineon Technologies |
Description: IC LED DRVR CTRLR PWM 14TSDSOPackage / Case: 14-TSSOP (0.154", 3.90mm Width) Exposed Pad Packaging: Cut Tape (CT) Grade: Automotive Voltage - Supply (Max): 18V Voltage - Supply (Min): 8.5V Dimming: PWM Supplier Device Package: PG-TSDSO-14 Topology: Switched Capacitor (Charge Pump) Internal Switch(s): No Current - Output / Channel: 120mA Applications: Lighting Operating Temperature: -40°C ~ 150°C (TJ) Type: DC DC Controller Number of Outputs: 2 Mounting Type: Surface Mount |
auf Bestellung 2950 Stücke: Lieferzeit 10-14 Tag (e) |
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ICL5102HVXUMA1 | Infineon Technologies |
Description: IC LED DRIVER OFFL NO 19DSOPackaging: Cut Tape (CT) Package / Case: 20-SOIC (0.295", 7.50mm Width), 19 Leads Mounting Type: Surface Mount Number of Outputs: 1 Frequency: 1.3MHz Type: AC DC Offline Switcher Operating Temperature: -40°C ~ 150°C (TJ) Applications: Lighting Internal Switch(s): No Topology: Half-Bridge Supplier Device Package: PG-DSO-19-1 Dimming: No Voltage - Supply (Min): 8.5V Voltage - Supply (Max): 18V Part Status: Active |
auf Bestellung 3930 Stücke: Lieferzeit 10-14 Tag (e) |
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IRAUDAMP23 | Infineon Technologies |
Description: EVAL BOARD FOR IRS2452AMAmplifier Type: Class D Output Type: 2-Channel (Stereo) Packaging: Box Contents: Board(s) Part Status: Active Supplied Contents: Board(s) Utilized IC / Part: IRS2452AM Board Type: Fully Populated Max Output Power x Channels @ Load: 600W x 2 @ 20Ohm Voltage - Supply: ±80V ~ 160V |
auf Bestellung 3 Stücke: Lieferzeit 10-14 Tag (e) |
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TLE5014SP16E0002XUMA1 | Infineon Technologies |
Description: GMR-BASED ANGLE SENSORPackaging: Tape & Reel (TR) Package / Case: 16-TSSOP (0.154", 3.90mm Width) Mounting Type: Surface Mount Output: Wheatstone Bridge Operating Temperature: -40°C ~ 125°C (TA) Termination Style: Gull Wing Voltage - Supply: 3V ~ 5.5V Actuator Type: External Magnet, Not Included Technology: Magnetoresistive For Measuring: Angle Supplier Device Package: PG-TDSO-16-1 Rotation Angle - Electrical, Mechanical: 0° ~ 360°, Continuous Output Signal: Cosine, Sine Part Status: Active Grade: Automotive Qualification: AEC-Q100 |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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TLE5014SP16E0001XUMA1 | Infineon Technologies |
Description: GMR-BASED ANGLE SENSORPackaging: Tape & Reel (TR) Package / Case: 16-TSSOP (0.154", 3.90mm Width) Mounting Type: Surface Mount Output: Wheatstone Bridge Operating Temperature: -40°C ~ 125°C (TA) Termination Style: Gull Wing Voltage - Supply: 3V ~ 5.5V Actuator Type: External Magnet, Not Included Technology: Magnetoresistive For Measuring: Angle Supplier Device Package: PG-TDSO-16-1 Rotation Angle - Electrical, Mechanical: 0° ~ 360°, Continuous Output Signal: Cosine, Sine Part Status: Active |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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TLE5014SP16E0001XUMA1 | Infineon Technologies |
Description: GMR-BASED ANGLE SENSORPackaging: Cut Tape (CT) Package / Case: 16-TSSOP (0.154", 3.90mm Width) Mounting Type: Surface Mount Output: Wheatstone Bridge Operating Temperature: -40°C ~ 125°C (TA) Termination Style: Gull Wing Voltage - Supply: 3V ~ 5.5V Actuator Type: External Magnet, Not Included Technology: Magnetoresistive For Measuring: Angle Supplier Device Package: PG-TDSO-16-1 Rotation Angle - Electrical, Mechanical: 0° ~ 360°, Continuous Output Signal: Cosine, Sine Part Status: Active |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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TLE5014SP16E0002XUMA1 | Infineon Technologies |
Description: GMR-BASED ANGLE SENSORPackaging: Cut Tape (CT) Package / Case: 16-TSSOP (0.154", 3.90mm Width) Mounting Type: Surface Mount Output: Wheatstone Bridge Operating Temperature: -40°C ~ 125°C (TA) Termination Style: Gull Wing Voltage - Supply: 3V ~ 5.5V Actuator Type: External Magnet, Not Included Technology: Magnetoresistive For Measuring: Angle Supplier Device Package: PG-TDSO-16-1 Rotation Angle - Electrical, Mechanical: 0° ~ 360°, Continuous Output Signal: Cosine, Sine Part Status: Active Grade: Automotive Qualification: AEC-Q100 |
auf Bestellung 64 Stücke: Lieferzeit 10-14 Tag (e) |
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BSC0403NSATMA1 | Infineon Technologies |
Description: 150V, N-CH MOSFET, LOGIC LEVEL,Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 75 V Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V Drain to Source Voltage (Vdss): 150 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 8V, 10V Supplier Device Package: PG-TDSON-8-7 Vgs(th) (Max) @ Id: 4.6V @ 91µA Power Dissipation (Max): 125W (Tc) Rds On (Max) @ Id, Vgs: 11mOhm @ 35A, 10 Current - Continuous Drain (Id) @ 25°C: 70A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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XDPS21071XUMA1 | Infineon Technologies |
Description: DIGITAL FFR CONTROLLER, DSO12Packaging: Tape & Reel (TR) Package / Case: 16-SOIC (0.154", 3.90mm Width), 12 Leads Output Type: Transistor Driver Mounting Type: Surface Mount Function: Step-Up/Step-Down Operating Temperature: -25°C ~ 125°C (TJ) Output Configuration: Positive Frequency - Switching: 24.9kHz ~ 139.4kHz Topology: Flyback Voltage - Supply (Vcc/Vdd): 3.3V Supplier Device Package: PG-DSO-12-20 Synchronous Rectifier: No Control Features: Current Limit, Soft Start Output Phases: 1 Clock Sync: No Number of Outputs: 1 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| TC264D40F200WBCKXUMA1 |
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Hersteller: Infineon Technologies
Description: IC MCU 32BIT 2.5MB FLASH 144LQFP
DigiKey Programmable: Not Verified
Number of I/O: 88
Supplier Device Package: PG-LQFP-144-22
Peripherals: DMA, WDT
Connectivity: ASC, CANbus, Ethernet, FlexRay, HSSL, I2C, LINbus, MSC, PSI5, QSPI, SENT
Voltage - Supply (Vcc/Vdd): 3.3V, 5V
Core Size: 32-Bit Dual-Core
Data Converters: A/D 40x12b, 3 x Sigma-Delta
Core Processor: TriCore™
EEPROM Size: 96K x 8
Program Memory Type: FLASH
Oscillator Type: External
Operating Temperature: -40°C ~ 125°C (TA)
RAM Size: 240K x 8
Program Memory Size: 2.5MB (2.5M x 8)
Speed: 200MHz
Mounting Type: Surface Mount
Package / Case: 144-LQFP Exposed Pad
Packaging: Cut Tape (CT)
Description: IC MCU 32BIT 2.5MB FLASH 144LQFP
DigiKey Programmable: Not Verified
Number of I/O: 88
Supplier Device Package: PG-LQFP-144-22
Peripherals: DMA, WDT
Connectivity: ASC, CANbus, Ethernet, FlexRay, HSSL, I2C, LINbus, MSC, PSI5, QSPI, SENT
Voltage - Supply (Vcc/Vdd): 3.3V, 5V
Core Size: 32-Bit Dual-Core
Data Converters: A/D 40x12b, 3 x Sigma-Delta
Core Processor: TriCore™
EEPROM Size: 96K x 8
Program Memory Type: FLASH
Oscillator Type: External
Operating Temperature: -40°C ~ 125°C (TA)
RAM Size: 240K x 8
Program Memory Size: 2.5MB (2.5M x 8)
Speed: 200MHz
Mounting Type: Surface Mount
Package / Case: 144-LQFP Exposed Pad
Packaging: Cut Tape (CT)
auf Bestellung 950 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 31.96 EUR |
| 10+ | 25.55 EUR |
| 25+ | 23.95 EUR |
| 100+ | 22.19 EUR |
| 250+ | 21.35 EUR |
| 500+ | 20.85 EUR |
| TC234LP32F200FACKXUMA1 |
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Hersteller: Infineon Technologies
Description: IC MCU 32BIT 2MB FLASH 144TQFP
DigiKey Programmable: Not Verified
Number of I/O: 120
Part Status: Active
Supplier Device Package: PG-TQFP-144-27
Peripherals: DMA, WDT
Connectivity: CANbus, FlexRay, LINbus, QSPI
Voltage - Supply (Vcc/Vdd): 3.3V
Core Size: 32-Bit
Data Converters: A/D 24x12b
Core Processor: TriCore™
EEPROM Size: 128K x 8
Program Memory Type: FLASH
Oscillator Type: External
Operating Temperature: -40°C ~ 125°C (TA)
RAM Size: 192K x 8
Program Memory Size: 2MB (2M x 8)
Speed: 200MHz
Mounting Type: Surface Mount
Package / Case: 144-LQFP Exposed Pad
Packaging: Cut Tape (CT)
Description: IC MCU 32BIT 2MB FLASH 144TQFP
DigiKey Programmable: Not Verified
Number of I/O: 120
Part Status: Active
Supplier Device Package: PG-TQFP-144-27
Peripherals: DMA, WDT
Connectivity: CANbus, FlexRay, LINbus, QSPI
Voltage - Supply (Vcc/Vdd): 3.3V
Core Size: 32-Bit
Data Converters: A/D 24x12b
Core Processor: TriCore™
EEPROM Size: 128K x 8
Program Memory Type: FLASH
Oscillator Type: External
Operating Temperature: -40°C ~ 125°C (TA)
RAM Size: 192K x 8
Program Memory Size: 2MB (2M x 8)
Speed: 200MHz
Mounting Type: Surface Mount
Package / Case: 144-LQFP Exposed Pad
Packaging: Cut Tape (CT)
auf Bestellung 380 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 25.78 EUR |
| 10+ | 20.48 EUR |
| 25+ | 19.15 EUR |
| 100+ | 17.69 EUR |
| 250+ | 17 EUR |
| 1ED44176N01FXUMA1 |
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Hersteller: Infineon Technologies
Description: IC GATE DRVR LOW-SIDE 8SOIC
DigiKey Programmable: Not Verified
Part Status: Active
Current - Peak Output (Source, Sink): 800mA, 1.75A
Logic Voltage - VIL, VIH: 1.2V, 1.7V
Gate Type: IGBT
Number of Drivers: 1
Driven Configuration: Low-Side
Channel Type: Single
Rise / Fall Time (Typ): 50ns, 25ns
Supplier Device Package: 8-SOIC
Input Type: CMOS, TTL
Voltage - Supply: 12.7V ~ 20V
Operating Temperature: -40°C ~ 125°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
Description: IC GATE DRVR LOW-SIDE 8SOIC
DigiKey Programmable: Not Verified
Part Status: Active
Current - Peak Output (Source, Sink): 800mA, 1.75A
Logic Voltage - VIL, VIH: 1.2V, 1.7V
Gate Type: IGBT
Number of Drivers: 1
Driven Configuration: Low-Side
Channel Type: Single
Rise / Fall Time (Typ): 50ns, 25ns
Supplier Device Package: 8-SOIC
Input Type: CMOS, TTL
Voltage - Supply: 12.7V ~ 20V
Operating Temperature: -40°C ~ 125°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
auf Bestellung 2883 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 13+ | 1.39 EUR |
| 18+ | 1 EUR |
| 25+ | 0.9 EUR |
| 100+ | 0.79 EUR |
| 250+ | 0.74 EUR |
| 500+ | 0.71 EUR |
| 1000+ | 0.68 EUR |
| TC275T64F200WDCKXUMA1 |
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Hersteller: Infineon Technologies
Description: IC MCU 32BIT 4MB FLASH 176LQFP
Supplier Device Package: PG-LQFP-176-22
Peripherals: DMA, WDT
Connectivity: ASC, CANbus, Ethernet, FlexRay, HSSL, I2C, LINbus, MSC, PSI5, QSPI, SENT
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Core Size: 32-Bit Tri-Core
Data Converters: A/D 40x12b, 6 x Sigma-Delta
Core Processor: TriCore™
EEPROM Size: 64K x 8
Program Memory Type: FLASH
Oscillator Type: External
Operating Temperature: -40°C ~ 125°C (TA)
RAM Size: 472K x 8
Program Memory Size: 4MB (4M x 8)
Speed: 200MHz
Mounting Type: Surface Mount
Package / Case: 176-LQFP Exposed Pad
Packaging: Cut Tape (CT)
DigiKey Programmable: Not Verified
Number of I/O: 112
Part Status: Active
Description: IC MCU 32BIT 4MB FLASH 176LQFP
Supplier Device Package: PG-LQFP-176-22
Peripherals: DMA, WDT
Connectivity: ASC, CANbus, Ethernet, FlexRay, HSSL, I2C, LINbus, MSC, PSI5, QSPI, SENT
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Core Size: 32-Bit Tri-Core
Data Converters: A/D 40x12b, 6 x Sigma-Delta
Core Processor: TriCore™
EEPROM Size: 64K x 8
Program Memory Type: FLASH
Oscillator Type: External
Operating Temperature: -40°C ~ 125°C (TA)
RAM Size: 472K x 8
Program Memory Size: 4MB (4M x 8)
Speed: 200MHz
Mounting Type: Surface Mount
Package / Case: 176-LQFP Exposed Pad
Packaging: Cut Tape (CT)
DigiKey Programmable: Not Verified
Number of I/O: 112
Part Status: Active
auf Bestellung 495 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 46.76 EUR |
| 10+ | 37.75 EUR |
| 25+ | 35.5 EUR |
| 100+ | 33.03 EUR |
| 250+ | 31.85 EUR |
| IRS2008MTRPBFAUMA1 |
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Hersteller: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 14MLPQ
Part Status: Obsolete
DigiKey Programmable: Not Verified
Current - Peak Output (Source, Sink): 290mA, 600mA
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Gate Type: IGBT, MOSFET (N-Channel)
Number of Drivers: 1
Driven Configuration: Half-Bridge
Channel Type: Synchronous
Rise / Fall Time (Typ): 70ns, 30ns
Supplier Device Package: 14-MLPQ (4x4)
High Side Voltage - Max (Bootstrap): 200 V
Input Type: CMOS
Voltage - Supply: 10V ~ 20V
Operating Temperature: -40°C ~ 125°C (TA)
Mounting Type: Surface Mount
Package / Case: 14-VFQFN Exposed Pad
Packaging: Tape & Reel (TR)
Description: IC GATE DRVR HALF-BRIDGE 14MLPQ
Part Status: Obsolete
DigiKey Programmable: Not Verified
Current - Peak Output (Source, Sink): 290mA, 600mA
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Gate Type: IGBT, MOSFET (N-Channel)
Number of Drivers: 1
Driven Configuration: Half-Bridge
Channel Type: Synchronous
Rise / Fall Time (Typ): 70ns, 30ns
Supplier Device Package: 14-MLPQ (4x4)
High Side Voltage - Max (Bootstrap): 200 V
Input Type: CMOS
Voltage - Supply: 10V ~ 20V
Operating Temperature: -40°C ~ 125°C (TA)
Mounting Type: Surface Mount
Package / Case: 14-VFQFN Exposed Pad
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| IRS2008MTRPBFAUMA1 |
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Hersteller: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 14MLPQ
Part Status: Obsolete
Current - Peak Output (Source, Sink): 290mA, 600mA
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Gate Type: IGBT, MOSFET (N-Channel)
Number of Drivers: 1
Driven Configuration: Half-Bridge
Channel Type: Synchronous
Rise / Fall Time (Typ): 70ns, 30ns
Supplier Device Package: 14-MLPQ (4x4)
High Side Voltage - Max (Bootstrap): 200 V
Input Type: CMOS
Voltage - Supply: 10V ~ 20V
Operating Temperature: -40°C ~ 125°C (TA)
Mounting Type: Surface Mount
Package / Case: 14-VFQFN Exposed Pad
Packaging: Cut Tape (CT)
DigiKey Programmable: Not Verified
Description: IC GATE DRVR HALF-BRIDGE 14MLPQ
Part Status: Obsolete
Current - Peak Output (Source, Sink): 290mA, 600mA
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Gate Type: IGBT, MOSFET (N-Channel)
Number of Drivers: 1
Driven Configuration: Half-Bridge
Channel Type: Synchronous
Rise / Fall Time (Typ): 70ns, 30ns
Supplier Device Package: 14-MLPQ (4x4)
High Side Voltage - Max (Bootstrap): 200 V
Input Type: CMOS
Voltage - Supply: 10V ~ 20V
Operating Temperature: -40°C ~ 125°C (TA)
Mounting Type: Surface Mount
Package / Case: 14-VFQFN Exposed Pad
Packaging: Cut Tape (CT)
DigiKey Programmable: Not Verified
auf Bestellung 2 Stücke:
Lieferzeit 10-14 Tag (e)
| SIDC14D60E6X7SA1 |
Hersteller: Infineon Technologies
Description: DIODE STANDARD 600V 30A DIE
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 30A
Supplier Device Package: Die
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 30 A
Current - Reverse Leakage @ Vr: 27 µA @ 600 V
Description: DIODE STANDARD 600V 30A DIE
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 30A
Supplier Device Package: Die
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 30 A
Current - Reverse Leakage @ Vr: 27 µA @ 600 V
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| SIDC08D60C8X1SA3 |
![]() |
Hersteller: Infineon Technologies
Description: DIODE GEN PURP 600V 30A DIE
Technology: Standard
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: Die
Packaging: Bulk
Current - Reverse Leakage @ Vr: 27 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.95 V @ 30 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Active
Operating Temperature - Junction: -40°C ~ 175°C
Supplier Device Package: Die
Current - Average Rectified (Io): 30A
Description: DIODE GEN PURP 600V 30A DIE
Technology: Standard
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: Die
Packaging: Bulk
Current - Reverse Leakage @ Vr: 27 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.95 V @ 30 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Active
Operating Temperature - Junction: -40°C ~ 175°C
Supplier Device Package: Die
Current - Average Rectified (Io): 30A
Produkt ist nicht verfügbar
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Stück im Wert von UAH
| SIGC25T60SNCX7SA1 |
Hersteller: Infineon Technologies
Description: IGBT 3 CHIP 600V WAFER
IGBT Type: NPT
Supplier Device Package: Die
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 30A
Input Type: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: Die
Packaging: Bulk
Current - Collector Pulsed (Icm): 90 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 30 A
Part Status: Obsolete
Test Condition: 400V, 30A, 11Ohm, 15V
Td (on/off) @ 25°C: 44ns/324ns
Description: IGBT 3 CHIP 600V WAFER
IGBT Type: NPT
Supplier Device Package: Die
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 30A
Input Type: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: Die
Packaging: Bulk
Current - Collector Pulsed (Icm): 90 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 30 A
Part Status: Obsolete
Test Condition: 400V, 30A, 11Ohm, 15V
Td (on/off) @ 25°C: 44ns/324ns
Produkt ist nicht verfügbar
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Stück im Wert von UAH
| SIDC14D60C8X1SA1 |
![]() |
Hersteller: Infineon Technologies
Description: DIODE STANDARD 600V 50A DIE
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 50A
Supplier Device Package: Die
Operating Temperature - Junction: -40°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.9 V @ 50 A
Current - Reverse Leakage @ Vr: 27 µA @ 600 V
Description: DIODE STANDARD 600V 50A DIE
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 50A
Supplier Device Package: Die
Operating Temperature - Junction: -40°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.9 V @ 50 A
Current - Reverse Leakage @ Vr: 27 µA @ 600 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| SIDC04D60F6X7SA1 |
Hersteller: Infineon Technologies
Description: DIODE STANDARD 600V 9A DIE
Current - Reverse Leakage @ Vr: 27 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 9 A
Voltage - DC Reverse (Vr) (Max): 600 V
Operating Temperature - Junction: -40°C ~ 175°C
Supplier Device Package: Die
Current - Average Rectified (Io): 9A
Technology: Standard
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: Die
Packaging: Bulk
Description: DIODE STANDARD 600V 9A DIE
Current - Reverse Leakage @ Vr: 27 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 9 A
Voltage - DC Reverse (Vr) (Max): 600 V
Operating Temperature - Junction: -40°C ~ 175°C
Supplier Device Package: Die
Current - Average Rectified (Io): 9A
Technology: Standard
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: Die
Packaging: Bulk
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| SIGC61T60NCX1SA1 |
![]() |
Hersteller: Infineon Technologies
Description: IGBT 3 CHIP 600V WAFER
Description: IGBT 3 CHIP 600V WAFER
Produkt ist nicht verfügbar
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Stück im Wert von UAH
| SIDC06D60E6X7SA1 |
Hersteller: Infineon Technologies
Description: DIODE STANDARD 600V 10A DIE
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 10A
Supplier Device Package: Die
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 10 A
Current - Reverse Leakage @ Vr: 27 µA @ 600 V
Description: DIODE STANDARD 600V 10A DIE
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 10A
Supplier Device Package: Die
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 10 A
Current - Reverse Leakage @ Vr: 27 µA @ 600 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| SIGC81T60NCX7SA1 |
Hersteller: Infineon Technologies
Description: IGBT 3 CHIP 600V WAFER
Current - Collector Pulsed (Icm): 300 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 100 A
Part Status: Obsolete
Test Condition: 300V, 100A, 2.2Ohm, 15V
Td (on/off) @ 25°C: 95ns/200ns
IGBT Type: NPT
Supplier Device Package: Die
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 100A
Input Type: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: Die
Packaging: Bulk
Description: IGBT 3 CHIP 600V WAFER
Current - Collector Pulsed (Icm): 300 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 100 A
Part Status: Obsolete
Test Condition: 300V, 100A, 2.2Ohm, 15V
Td (on/off) @ 25°C: 95ns/200ns
IGBT Type: NPT
Supplier Device Package: Die
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 100A
Input Type: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: Die
Packaging: Bulk
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| SIDC14D60F6X7SA1 |
Hersteller: Infineon Technologies
Description: DIODE STANDARD 600V 45A DIE
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 45A
Supplier Device Package: Die
Operating Temperature - Junction: -40°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 45 A
Current - Reverse Leakage @ Vr: 27 µA @ 600 V
Description: DIODE STANDARD 600V 45A DIE
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 45A
Supplier Device Package: Die
Operating Temperature - Junction: -40°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 45 A
Current - Reverse Leakage @ Vr: 27 µA @ 600 V
Produkt ist nicht verfügbar
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Stück im Wert von UAH
| SIGC42T60NCX7SA1 |
Hersteller: Infineon Technologies
Description: IGBT 3 CHIP 600V WAFER
Current - Collector Pulsed (Icm): 150 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 50 A
Part Status: Obsolete
Test Condition: 300V, 50A, 3.3Ohm, 15V
Td (on/off) @ 25°C: 43ns/130ns
IGBT Type: NPT
Supplier Device Package: Die
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 50A
Input Type: Standard
Operating Temperature: -55°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: Die
Packaging: Bulk
Description: IGBT 3 CHIP 600V WAFER
Current - Collector Pulsed (Icm): 150 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 50 A
Part Status: Obsolete
Test Condition: 300V, 50A, 3.3Ohm, 15V
Td (on/off) @ 25°C: 43ns/130ns
IGBT Type: NPT
Supplier Device Package: Die
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 50A
Input Type: Standard
Operating Temperature: -55°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: Die
Packaging: Bulk
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| SIDC06D60F6X1SA4 |
![]() |
Hersteller: Infineon Technologies
Description: DIODE STANDARD 600V 15A DIE
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 15A
Supplier Device Package: Die
Operating Temperature - Junction: -40°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 15 A
Current - Reverse Leakage @ Vr: 27 µA @ 600 V
Description: DIODE STANDARD 600V 15A DIE
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 15A
Supplier Device Package: Die
Operating Temperature - Junction: -40°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 15 A
Current - Reverse Leakage @ Vr: 27 µA @ 600 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| SIDC14D60F6X1SA4 |
![]() |
Hersteller: Infineon Technologies
Description: DIODE STANDARD 600V 45A DIE
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 45A
Supplier Device Package: Die
Operating Temperature - Junction: -40°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 45 A
Current - Reverse Leakage @ Vr: 27 µA @ 600 V
Description: DIODE STANDARD 600V 45A DIE
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 45A
Supplier Device Package: Die
Operating Temperature - Junction: -40°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 45 A
Current - Reverse Leakage @ Vr: 27 µA @ 600 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| SIDC08D60C8X7SA1 |
Hersteller: Infineon Technologies
Description: DIODE GEN PURP 600V 30A DIE
Current - Reverse Leakage @ Vr: 27 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.95 V @ 30 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Active
Operating Temperature - Junction: -40°C ~ 175°C
Supplier Device Package: Die
Current - Average Rectified (Io): 30A
Technology: Standard
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: Die
Packaging: Bulk
Description: DIODE GEN PURP 600V 30A DIE
Current - Reverse Leakage @ Vr: 27 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.95 V @ 30 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Active
Operating Temperature - Junction: -40°C ~ 175°C
Supplier Device Package: Die
Current - Average Rectified (Io): 30A
Technology: Standard
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: Die
Packaging: Bulk
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| SIDC14D60C8X7SA1 |
Hersteller: Infineon Technologies
Description: DIODE GEN PURP 600V 50A DIE
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Active
Operating Temperature - Junction: -40°C ~ 175°C
Supplier Device Package: Die
Current - Average Rectified (Io): 50A
Technology: Standard
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: Die
Packaging: Bulk
Current - Reverse Leakage @ Vr: 27 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.9 V @ 50 A
Description: DIODE GEN PURP 600V 50A DIE
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Active
Operating Temperature - Junction: -40°C ~ 175°C
Supplier Device Package: Die
Current - Average Rectified (Io): 50A
Technology: Standard
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: Die
Packaging: Bulk
Current - Reverse Leakage @ Vr: 27 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.9 V @ 50 A
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| SIDC06D65C8X1SA1 |
![]() |
Hersteller: Infineon Technologies
Description: DIODE STANDARD 650V 20A DIE
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 20A
Supplier Device Package: Die
Operating Temperature - Junction: -40°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.87 V @ 20 A
Current - Reverse Leakage @ Vr: 240 nA @ 650 V
Description: DIODE STANDARD 650V 20A DIE
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 20A
Supplier Device Package: Die
Operating Temperature - Junction: -40°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.87 V @ 20 A
Current - Reverse Leakage @ Vr: 240 nA @ 650 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| SIGC42T60SNCX7SA1 |
Hersteller: Infineon Technologies
Description: IGBT 3 CHIP 600V WAFER
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 50A
Input Type: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: Die
Packaging: Bulk
Current - Collector Pulsed (Icm): 150 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 50 A
Test Condition: 400V, 50A, 6.8Ohm, 15V
Td (on/off) @ 25°C: 57ns/380ns
IGBT Type: NPT
Supplier Device Package: Die
Description: IGBT 3 CHIP 600V WAFER
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 50A
Input Type: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: Die
Packaging: Bulk
Current - Collector Pulsed (Icm): 150 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 50 A
Test Condition: 400V, 50A, 6.8Ohm, 15V
Td (on/off) @ 25°C: 57ns/380ns
IGBT Type: NPT
Supplier Device Package: Die
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| SIDC08D60C8X1SA2 |
![]() |
Hersteller: Infineon Technologies
Description: DIODE GEN PURP 600V 30A DIE
Current - Reverse Leakage @ Vr: 27 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.95 V @ 30 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Active
Operating Temperature - Junction: -40°C ~ 175°C
Supplier Device Package: Die
Current - Average Rectified (Io): 30A
Technology: Standard
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: Die
Packaging: Bulk
Description: DIODE GEN PURP 600V 30A DIE
Current - Reverse Leakage @ Vr: 27 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.95 V @ 30 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Active
Operating Temperature - Junction: -40°C ~ 175°C
Supplier Device Package: Die
Current - Average Rectified (Io): 30A
Technology: Standard
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: Die
Packaging: Bulk
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| SIDC06D60F6X7SA1 |
Hersteller: Infineon Technologies
Description: DIODE STANDARD 600V 15A DIE
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 15A
Supplier Device Package: Die
Operating Temperature - Junction: -40°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 15 A
Current - Reverse Leakage @ Vr: 27 µA @ 600 V
Description: DIODE STANDARD 600V 15A DIE
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 15A
Supplier Device Package: Die
Operating Temperature - Junction: -40°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 15 A
Current - Reverse Leakage @ Vr: 27 µA @ 600 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| SIDC06D60F6X1SA2 |
![]() |
Hersteller: Infineon Technologies
Description: DIODE STANDARD 600V 15A DIE
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 15A
Supplier Device Package: Die
Operating Temperature - Junction: -40°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 15 A
Current - Reverse Leakage @ Vr: 27 µA @ 600 V
Description: DIODE STANDARD 600V 15A DIE
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 15A
Supplier Device Package: Die
Operating Temperature - Junction: -40°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 15 A
Current - Reverse Leakage @ Vr: 27 µA @ 600 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| SIDC06D60E6X1SA1 |
![]() |
Hersteller: Infineon Technologies
Description: DIODE STANDARD 600V 10A DIE
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 10A
Supplier Device Package: Die
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 10 A
Current - Reverse Leakage @ Vr: 27 µA @ 600 V
Description: DIODE STANDARD 600V 10A DIE
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 10A
Supplier Device Package: Die
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 10 A
Current - Reverse Leakage @ Vr: 27 µA @ 600 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| SIDC14D60E6X1SA4 |
![]() |
Hersteller: Infineon Technologies
Description: DIODE STANDARD 600V 30A DIE
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 30A
Supplier Device Package: Die
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 30 A
Current - Reverse Leakage @ Vr: 27 µA @ 600 V
Description: DIODE STANDARD 600V 30A DIE
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 30A
Supplier Device Package: Die
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 30 A
Current - Reverse Leakage @ Vr: 27 µA @ 600 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| SIGC25T60UNX7SA1 |
Hersteller: Infineon Technologies
Description: IGBT 3 CHIP 600V WAFER
Description: IGBT 3 CHIP 600V WAFER
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| SIGC61T60NCX7SA1 |
Hersteller: Infineon Technologies
Description: IGBT 3 CHIP 600V WAFER
Current - Collector Pulsed (Icm): 225 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 75 A
Test Condition: 300V, 75A, 3Ohm, 15V
Td (on/off) @ 25°C: 65ns/170ns
IGBT Type: NPT
Supplier Device Package: Die
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 75A
Input Type: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: Die
Packaging: Bulk
Description: IGBT 3 CHIP 600V WAFER
Current - Collector Pulsed (Icm): 225 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 75 A
Test Condition: 300V, 75A, 3Ohm, 15V
Td (on/off) @ 25°C: 65ns/170ns
IGBT Type: NPT
Supplier Device Package: Die
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 75A
Input Type: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: Die
Packaging: Bulk
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| SIDC14D60E6X1SA3 |
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Hersteller: Infineon Technologies
Description: DIODE STANDARD 600V 30A DIE
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 30A
Supplier Device Package: Die
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 30 A
Current - Reverse Leakage @ Vr: 27 µA @ 600 V
Description: DIODE STANDARD 600V 30A DIE
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 30A
Supplier Device Package: Die
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 30 A
Current - Reverse Leakage @ Vr: 27 µA @ 600 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| SIDC06D60E6X1SA4 |
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Hersteller: Infineon Technologies
Description: DIODE STANDARD 600V 10A DIE
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 10A
Supplier Device Package: Die
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 10 A
Current - Reverse Leakage @ Vr: 27 µA @ 600 V
Description: DIODE STANDARD 600V 10A DIE
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 10A
Supplier Device Package: Die
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 10 A
Current - Reverse Leakage @ Vr: 27 µA @ 600 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| SIDC04D60F6X1SA2 |
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Hersteller: Infineon Technologies
Description: DIODE STANDARD 600V 9A DIE
Packaging: Bulk
Current - Reverse Leakage @ Vr: 27 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 9 A
Voltage - DC Reverse (Vr) (Max): 600 V
Operating Temperature - Junction: -40°C ~ 175°C
Supplier Device Package: Die
Current - Average Rectified (Io): 9A
Technology: Standard
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: Die
Description: DIODE STANDARD 600V 9A DIE
Packaging: Bulk
Current - Reverse Leakage @ Vr: 27 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 9 A
Voltage - DC Reverse (Vr) (Max): 600 V
Operating Temperature - Junction: -40°C ~ 175°C
Supplier Device Package: Die
Current - Average Rectified (Io): 9A
Technology: Standard
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: Die
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| SIDC14D60C8X1SA3 |
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Hersteller: Infineon Technologies
Description: DIODE GEN PURP 600V 50A DIE
Current - Reverse Leakage @ Vr: 27 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.9 V @ 50 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Active
Operating Temperature - Junction: -40°C ~ 175°C
Supplier Device Package: Die
Current - Average Rectified (Io): 50A
Technology: Standard
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: Die
Packaging: Bulk
Description: DIODE GEN PURP 600V 50A DIE
Current - Reverse Leakage @ Vr: 27 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.9 V @ 50 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Active
Operating Temperature - Junction: -40°C ~ 175°C
Supplier Device Package: Die
Current - Average Rectified (Io): 50A
Technology: Standard
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: Die
Packaging: Bulk
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| SIDC14D60F6X1SA3 |
![]() |
Hersteller: Infineon Technologies
Description: DIODE STANDARD 600V 45A DIE
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 45A
Supplier Device Package: Die
Operating Temperature - Junction: -40°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 45 A
Current - Reverse Leakage @ Vr: 27 µA @ 600 V
Description: DIODE STANDARD 600V 45A DIE
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 45A
Supplier Device Package: Die
Operating Temperature - Junction: -40°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 45 A
Current - Reverse Leakage @ Vr: 27 µA @ 600 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| SIDC26D60C8X1SA1 |
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Hersteller: Infineon Technologies
Description: DIODE STANDARD 600V 100A DIE
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 100A
Supplier Device Package: Die
Operating Temperature - Junction: -40°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.9 V @ 100 A
Current - Reverse Leakage @ Vr: 27 µA @ 600 V
Current Coupled to Voltage - Forward (Vf) (Max) @ If: 100
Voltage Coupled to Current - Reverse Leakage @ Vr: 600
Description: DIODE STANDARD 600V 100A DIE
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 100A
Supplier Device Package: Die
Operating Temperature - Junction: -40°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.9 V @ 100 A
Current - Reverse Leakage @ Vr: 27 µA @ 600 V
Current Coupled to Voltage - Forward (Vf) (Max) @ If: 100
Voltage Coupled to Current - Reverse Leakage @ Vr: 600
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| SIDC08D60C8X1SA1 |
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Hersteller: Infineon Technologies
Description: DIODE GEN PURP 600V 30A DIE
Current - Reverse Leakage @ Vr: 27 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.95 V @ 30 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Active
Operating Temperature - Junction: -40°C ~ 175°C
Supplier Device Package: Die
Current - Average Rectified (Io): 30A
Technology: Standard
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: Die
Packaging: Bulk
Description: DIODE GEN PURP 600V 30A DIE
Current - Reverse Leakage @ Vr: 27 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.95 V @ 30 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Active
Operating Temperature - Junction: -40°C ~ 175°C
Supplier Device Package: Die
Current - Average Rectified (Io): 30A
Technology: Standard
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: Die
Packaging: Bulk
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| SIDC04D60F6X1SA4 |
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Hersteller: Infineon Technologies
Description: DIODE STANDARD 600V 9A DIE
Mounting Type: Surface Mount
Package / Case: Die
Packaging: Bulk
Current - Reverse Leakage @ Vr: 27 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 9 A
Voltage - DC Reverse (Vr) (Max): 600 V
Operating Temperature - Junction: -40°C ~ 175°C
Supplier Device Package: Die
Current - Average Rectified (Io): 9A
Technology: Standard
Speed: Standard Recovery >500ns, > 200mA (Io)
Description: DIODE STANDARD 600V 9A DIE
Mounting Type: Surface Mount
Package / Case: Die
Packaging: Bulk
Current - Reverse Leakage @ Vr: 27 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 9 A
Voltage - DC Reverse (Vr) (Max): 600 V
Operating Temperature - Junction: -40°C ~ 175°C
Supplier Device Package: Die
Current - Average Rectified (Io): 9A
Technology: Standard
Speed: Standard Recovery >500ns, > 200mA (Io)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| SIGC25T60NCX7SA1 |
Hersteller: Infineon Technologies
Description: IGBT 3 CHIP 600V WAFER
Description: IGBT 3 CHIP 600V WAFER
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| SIDC14D60F6X1SA1 |
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Hersteller: Infineon Technologies
Description: DIODE STANDARD 600V 45A DIE
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 45A
Supplier Device Package: Die
Operating Temperature - Junction: -40°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 45 A
Current - Reverse Leakage @ Vr: 27 µA @ 600 V
Description: DIODE STANDARD 600V 45A DIE
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 45A
Supplier Device Package: Die
Operating Temperature - Junction: -40°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 45 A
Current - Reverse Leakage @ Vr: 27 µA @ 600 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| SIGC81T60SNCX7SA1 |
Hersteller: Infineon Technologies
Description: IGBT 3 CHIP 600V WAFER
Current - Collector Pulsed (Icm): 300 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 100 A
Part Status: Obsolete
Test Condition: 400V, 100A, 3.3Ohm, 15V
Td (on/off) @ 25°C: 65ns/450ns
IGBT Type: NPT
Supplier Device Package: Die
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 100A
Input Type: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: Die
Packaging: Bulk
Description: IGBT 3 CHIP 600V WAFER
Current - Collector Pulsed (Icm): 300 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 100 A
Part Status: Obsolete
Test Condition: 400V, 100A, 3.3Ohm, 15V
Td (on/off) @ 25°C: 65ns/450ns
IGBT Type: NPT
Supplier Device Package: Die
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 100A
Input Type: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: Die
Packaging: Bulk
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| SIDC14D60C8X1SA2 |
![]() |
Hersteller: Infineon Technologies
Description: DIODE STANDARD 600V 50A DIE
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 50A
Supplier Device Package: Die
Operating Temperature - Junction: -40°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.9 V @ 50 A
Current - Reverse Leakage @ Vr: 27 µA @ 600 V
Description: DIODE STANDARD 600V 50A DIE
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 50A
Supplier Device Package: Die
Operating Temperature - Junction: -40°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.9 V @ 50 A
Current - Reverse Leakage @ Vr: 27 µA @ 600 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| REFICL5102HVU150WTOBO1 |
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Hersteller: Infineon Technologies
Description: EVAL BOARD FOR ICL5102HV
Contents: Board(s)
Part Status: Active
Outputs and Type: 1 Non-Isolated Output
Current - Output / Channel: 3A
Voltage - Input: 277 ~ 528 VAC
Voltage - Output: 17V ~ 48V
Packaging: Box
Supplied Contents: Board(s)
Utilized IC / Part: ICL5102HV
Description: EVAL BOARD FOR ICL5102HV
Contents: Board(s)
Part Status: Active
Outputs and Type: 1 Non-Isolated Output
Current - Output / Channel: 3A
Voltage - Input: 277 ~ 528 VAC
Voltage - Output: 17V ~ 48V
Packaging: Box
Supplied Contents: Board(s)
Utilized IC / Part: ICL5102HV
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FS380R12A6T4BBPSA1 |
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Hersteller: Infineon Technologies
Description: IGBT MODULE 1200V 380A
Input Capacitance (Cies) @ Vce: 19 nF @ 25 V
Current - Collector Cutoff (Max): 1 mA
Current - Collector (Ic) (Max): 380 A
Part Status: Active
IGBT Type: Trench Field Stop
Supplier Device Package: AG-HYBRIDD-2
NTC Thermistor: Yes
Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 250A
Operating Temperature: -40°C ~ 150°C (TJ)
Configuration: Three Phase Inverter
Input: Standard
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Tray
Power - Max: 870 W
Voltage - Collector Emitter Breakdown (Max): 1200 V
Description: IGBT MODULE 1200V 380A
Input Capacitance (Cies) @ Vce: 19 nF @ 25 V
Current - Collector Cutoff (Max): 1 mA
Current - Collector (Ic) (Max): 380 A
Part Status: Active
IGBT Type: Trench Field Stop
Supplier Device Package: AG-HYBRIDD-2
NTC Thermistor: Yes
Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 250A
Operating Temperature: -40°C ~ 150°C (TJ)
Configuration: Three Phase Inverter
Input: Standard
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Tray
Power - Max: 870 W
Voltage - Collector Emitter Breakdown (Max): 1200 V
auf Bestellung 6 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 1022.75 EUR |
| TLE92108232QXXUMA1 |
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Hersteller: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 48VFQFN
Supplier Device Package: PG-VQFN-48-31
High Side Voltage - Max (Bootstrap): 950 V
Input Type: Non-Inverting
Voltage - Supply: 6V ~ 28V
Mounting Type: Surface Mount
Package / Case: 48-VFQFN Exposed Pad
Packaging: Tape & Reel (TR)
Part Status: Active
Current - Peak Output (Source, Sink): 100mA, 100mA
Gate Type: IGBT, MOSFET (N-Channel)
Number of Drivers: 2
Driven Configuration: Half-Bridge
Channel Type: Synchronous
DigiKey Programmable: Not Verified
Description: IC GATE DRVR HALF-BRIDGE 48VFQFN
Supplier Device Package: PG-VQFN-48-31
High Side Voltage - Max (Bootstrap): 950 V
Input Type: Non-Inverting
Voltage - Supply: 6V ~ 28V
Mounting Type: Surface Mount
Package / Case: 48-VFQFN Exposed Pad
Packaging: Tape & Reel (TR)
Part Status: Active
Current - Peak Output (Source, Sink): 100mA, 100mA
Gate Type: IGBT, MOSFET (N-Channel)
Number of Drivers: 2
Driven Configuration: Half-Bridge
Channel Type: Synchronous
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| FS950R08A6P2BBPSA1 |
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Hersteller: Infineon Technologies
Description: IGBT MOD 750V 950A AG-HYBRIDD-2
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.35V @ 15V, 450A
NTC Thermistor: Yes
Supplier Device Package: AG-HYBRIDD-2
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 950 A
Voltage - Collector Emitter Breakdown (Max): 750 V
Power - Max: 870 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 80 nF @ 50 V
Description: IGBT MOD 750V 950A AG-HYBRIDD-2
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.35V @ 15V, 450A
NTC Thermistor: Yes
Supplier Device Package: AG-HYBRIDD-2
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 950 A
Voltage - Collector Emitter Breakdown (Max): 750 V
Power - Max: 870 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 80 nF @ 50 V
auf Bestellung 3 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 483.28 EUR |
| TLS715B0TSNPBOARDTOBO1 |
Hersteller: Infineon Technologies
Description: EVAL TLS715B0NAV50 LDO
Channels per IC: 1 - Single
Supplied Contents: Board(s)
Utilized IC / Part: TLS715B0NAV50
Board Type: Fully Populated
Regulator Type: Positive Fixed
Current - Output: 150mA
Voltage - Input: 4V ~ 40V
Voltage - Output: 5V
Packaging: Box
Description: EVAL TLS715B0NAV50 LDO
Channels per IC: 1 - Single
Supplied Contents: Board(s)
Utilized IC / Part: TLS715B0NAV50
Board Type: Fully Populated
Regulator Type: Positive Fixed
Current - Output: 150mA
Voltage - Input: 4V ~ 40V
Voltage - Output: 5V
Packaging: Box
auf Bestellung 2 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 45.53 EUR |
| TLE9210823QXAPPKITTOBO1 |
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Hersteller: Infineon Technologies
Description: EVAL MOSFET DRVR TLE92018 MOTIX
Part Status: Active
Supplied Contents: Board(s)
Utilized IC / Part: TLE9210823
Type: Power Management
Function: Gate Driver
Packaging: Box
Description: EVAL MOSFET DRVR TLE92018 MOTIX
Part Status: Active
Supplied Contents: Board(s)
Utilized IC / Part: TLE9210823
Type: Power Management
Function: Gate Driver
Packaging: Box
auf Bestellung 8 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 88.35 EUR |
| EVALM5E1B1245NSICTOBO1 |
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Hersteller: Infineon Technologies
Description: EVAL COOLSIC MOSFET MOTOR DRIVER
Supplied Contents: Board(s)
Utilized IC / Part: 1EDI20H12AH
Type: Power Management
Function: Gate Driver
Packaging: Box
Contents: Board(s)
Description: EVAL COOLSIC MOSFET MOTOR DRIVER
Supplied Contents: Board(s)
Utilized IC / Part: 1EDI20H12AH
Type: Power Management
Function: Gate Driver
Packaging: Box
Contents: Board(s)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| TLE92108231QXXUMA1 |
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Hersteller: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 48VFQFN
Part Status: Active
Current - Peak Output (Source, Sink): 100mA, 100mA
Gate Type: IGBT, N-Channel MOSFET
Number of Drivers: 2
Driven Configuration: Half-Bridge
Channel Type: Synchronous
Supplier Device Package: PG-VQFN-48-31
High Side Voltage - Max (Bootstrap): 950 V
Input Type: Non-Inverting
Voltage - Supply: 6V ~ 28V
Mounting Type: Surface Mount
DigiKey Programmable: Not Verified
Package / Case: 48-VFQFN Exposed Pad
Packaging: Tape & Reel (TR)
Description: IC GATE DRVR HALF-BRIDGE 48VFQFN
Part Status: Active
Current - Peak Output (Source, Sink): 100mA, 100mA
Gate Type: IGBT, N-Channel MOSFET
Number of Drivers: 2
Driven Configuration: Half-Bridge
Channel Type: Synchronous
Supplier Device Package: PG-VQFN-48-31
High Side Voltage - Max (Bootstrap): 950 V
Input Type: Non-Inverting
Voltage - Supply: 6V ~ 28V
Mounting Type: Surface Mount
DigiKey Programmable: Not Verified
Package / Case: 48-VFQFN Exposed Pad
Packaging: Tape & Reel (TR)
auf Bestellung 7500 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 2500+ | 3.1 EUR |
| 5000+ | 3.04 EUR |
| ICL5102HVXUMA1 |
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Hersteller: Infineon Technologies
Description: IC LED DRIVER OFFL NO 19DSO
Packaging: Tape & Reel (TR)
Package / Case: 20-SOIC (0.295", 7.50mm Width), 19 Leads
Mounting Type: Surface Mount
Number of Outputs: 1
Frequency: 1.3MHz
Type: AC DC Offline Switcher
Operating Temperature: -40°C ~ 150°C (TJ)
Applications: Lighting
Internal Switch(s): No
Topology: Half-Bridge
Supplier Device Package: PG-DSO-19-1
Dimming: No
Voltage - Supply (Min): 8.5V
Voltage - Supply (Max): 18V
Part Status: Active
Description: IC LED DRIVER OFFL NO 19DSO
Packaging: Tape & Reel (TR)
Package / Case: 20-SOIC (0.295", 7.50mm Width), 19 Leads
Mounting Type: Surface Mount
Number of Outputs: 1
Frequency: 1.3MHz
Type: AC DC Offline Switcher
Operating Temperature: -40°C ~ 150°C (TJ)
Applications: Lighting
Internal Switch(s): No
Topology: Half-Bridge
Supplier Device Package: PG-DSO-19-1
Dimming: No
Voltage - Supply (Min): 8.5V
Voltage - Supply (Max): 18V
Part Status: Active
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1000+ | 2.96 EUR |
| 2000+ | 2.89 EUR |
| 3000+ | 2.85 EUR |
| TLD22522EPXUMA1 |
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Hersteller: Infineon Technologies
Description: IC LED DRVR CTRLR PWM 14TSDSO
Grade: Automotive
Voltage - Supply (Max): 18V
Voltage - Supply (Min): 8.5V
Dimming: PWM
Supplier Device Package: PG-TSDSO-14
Topology: Switched Capacitor (Charge Pump)
Internal Switch(s): No
Current - Output / Channel: 120mA
Applications: Lighting
Operating Temperature: -40°C ~ 150°C (TJ)
Type: DC DC Controller
Number of Outputs: 2
Mounting Type: Surface Mount
Package / Case: 14-TSSOP (0.154", 3.90mm Width) Exposed Pad
Packaging: Tape & Reel (TR)
Description: IC LED DRVR CTRLR PWM 14TSDSO
Grade: Automotive
Voltage - Supply (Max): 18V
Voltage - Supply (Min): 8.5V
Dimming: PWM
Supplier Device Package: PG-TSDSO-14
Topology: Switched Capacitor (Charge Pump)
Internal Switch(s): No
Current - Output / Channel: 120mA
Applications: Lighting
Operating Temperature: -40°C ~ 150°C (TJ)
Type: DC DC Controller
Number of Outputs: 2
Mounting Type: Surface Mount
Package / Case: 14-TSSOP (0.154", 3.90mm Width) Exposed Pad
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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| TLD22522EPXUMA1 |
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Hersteller: Infineon Technologies
Description: IC LED DRVR CTRLR PWM 14TSDSO
Package / Case: 14-TSSOP (0.154", 3.90mm Width) Exposed Pad
Packaging: Cut Tape (CT)
Grade: Automotive
Voltage - Supply (Max): 18V
Voltage - Supply (Min): 8.5V
Dimming: PWM
Supplier Device Package: PG-TSDSO-14
Topology: Switched Capacitor (Charge Pump)
Internal Switch(s): No
Current - Output / Channel: 120mA
Applications: Lighting
Operating Temperature: -40°C ~ 150°C (TJ)
Type: DC DC Controller
Number of Outputs: 2
Mounting Type: Surface Mount
Description: IC LED DRVR CTRLR PWM 14TSDSO
Package / Case: 14-TSSOP (0.154", 3.90mm Width) Exposed Pad
Packaging: Cut Tape (CT)
Grade: Automotive
Voltage - Supply (Max): 18V
Voltage - Supply (Min): 8.5V
Dimming: PWM
Supplier Device Package: PG-TSDSO-14
Topology: Switched Capacitor (Charge Pump)
Internal Switch(s): No
Current - Output / Channel: 120mA
Applications: Lighting
Operating Temperature: -40°C ~ 150°C (TJ)
Type: DC DC Controller
Number of Outputs: 2
Mounting Type: Surface Mount
auf Bestellung 2950 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 8+ | 2.43 EUR |
| 10+ | 1.77 EUR |
| 25+ | 1.6 EUR |
| 100+ | 1.42 EUR |
| 250+ | 1.34 EUR |
| 500+ | 1.28 EUR |
| 1000+ | 1.24 EUR |
| ICL5102HVXUMA1 |
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Hersteller: Infineon Technologies
Description: IC LED DRIVER OFFL NO 19DSO
Packaging: Cut Tape (CT)
Package / Case: 20-SOIC (0.295", 7.50mm Width), 19 Leads
Mounting Type: Surface Mount
Number of Outputs: 1
Frequency: 1.3MHz
Type: AC DC Offline Switcher
Operating Temperature: -40°C ~ 150°C (TJ)
Applications: Lighting
Internal Switch(s): No
Topology: Half-Bridge
Supplier Device Package: PG-DSO-19-1
Dimming: No
Voltage - Supply (Min): 8.5V
Voltage - Supply (Max): 18V
Part Status: Active
Description: IC LED DRIVER OFFL NO 19DSO
Packaging: Cut Tape (CT)
Package / Case: 20-SOIC (0.295", 7.50mm Width), 19 Leads
Mounting Type: Surface Mount
Number of Outputs: 1
Frequency: 1.3MHz
Type: AC DC Offline Switcher
Operating Temperature: -40°C ~ 150°C (TJ)
Applications: Lighting
Internal Switch(s): No
Topology: Half-Bridge
Supplier Device Package: PG-DSO-19-1
Dimming: No
Voltage - Supply (Min): 8.5V
Voltage - Supply (Max): 18V
Part Status: Active
auf Bestellung 3930 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 4+ | 5.39 EUR |
| 10+ | 4.04 EUR |
| 25+ | 3.7 EUR |
| 100+ | 3.33 EUR |
| 250+ | 3.16 EUR |
| 500+ | 3.05 EUR |
| IRAUDAMP23 |
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Hersteller: Infineon Technologies
Description: EVAL BOARD FOR IRS2452AM
Amplifier Type: Class D
Output Type: 2-Channel (Stereo)
Packaging: Box
Contents: Board(s)
Part Status: Active
Supplied Contents: Board(s)
Utilized IC / Part: IRS2452AM
Board Type: Fully Populated
Max Output Power x Channels @ Load: 600W x 2 @ 20Ohm
Voltage - Supply: ±80V ~ 160V
Description: EVAL BOARD FOR IRS2452AM
Amplifier Type: Class D
Output Type: 2-Channel (Stereo)
Packaging: Box
Contents: Board(s)
Part Status: Active
Supplied Contents: Board(s)
Utilized IC / Part: IRS2452AM
Board Type: Fully Populated
Max Output Power x Channels @ Load: 600W x 2 @ 20Ohm
Voltage - Supply: ±80V ~ 160V
auf Bestellung 3 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 448.59 EUR |
| TLE5014SP16E0002XUMA1 |
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Hersteller: Infineon Technologies
Description: GMR-BASED ANGLE SENSOR
Packaging: Tape & Reel (TR)
Package / Case: 16-TSSOP (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Output: Wheatstone Bridge
Operating Temperature: -40°C ~ 125°C (TA)
Termination Style: Gull Wing
Voltage - Supply: 3V ~ 5.5V
Actuator Type: External Magnet, Not Included
Technology: Magnetoresistive
For Measuring: Angle
Supplier Device Package: PG-TDSO-16-1
Rotation Angle - Electrical, Mechanical: 0° ~ 360°, Continuous
Output Signal: Cosine, Sine
Part Status: Active
Grade: Automotive
Qualification: AEC-Q100
Description: GMR-BASED ANGLE SENSOR
Packaging: Tape & Reel (TR)
Package / Case: 16-TSSOP (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Output: Wheatstone Bridge
Operating Temperature: -40°C ~ 125°C (TA)
Termination Style: Gull Wing
Voltage - Supply: 3V ~ 5.5V
Actuator Type: External Magnet, Not Included
Technology: Magnetoresistive
For Measuring: Angle
Supplier Device Package: PG-TDSO-16-1
Rotation Angle - Electrical, Mechanical: 0° ~ 360°, Continuous
Output Signal: Cosine, Sine
Part Status: Active
Grade: Automotive
Qualification: AEC-Q100
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
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| TLE5014SP16E0001XUMA1 |
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Hersteller: Infineon Technologies
Description: GMR-BASED ANGLE SENSOR
Packaging: Tape & Reel (TR)
Package / Case: 16-TSSOP (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Output: Wheatstone Bridge
Operating Temperature: -40°C ~ 125°C (TA)
Termination Style: Gull Wing
Voltage - Supply: 3V ~ 5.5V
Actuator Type: External Magnet, Not Included
Technology: Magnetoresistive
For Measuring: Angle
Supplier Device Package: PG-TDSO-16-1
Rotation Angle - Electrical, Mechanical: 0° ~ 360°, Continuous
Output Signal: Cosine, Sine
Part Status: Active
Description: GMR-BASED ANGLE SENSOR
Packaging: Tape & Reel (TR)
Package / Case: 16-TSSOP (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Output: Wheatstone Bridge
Operating Temperature: -40°C ~ 125°C (TA)
Termination Style: Gull Wing
Voltage - Supply: 3V ~ 5.5V
Actuator Type: External Magnet, Not Included
Technology: Magnetoresistive
For Measuring: Angle
Supplier Device Package: PG-TDSO-16-1
Rotation Angle - Electrical, Mechanical: 0° ~ 360°, Continuous
Output Signal: Cosine, Sine
Part Status: Active
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| TLE5014SP16E0001XUMA1 |
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Hersteller: Infineon Technologies
Description: GMR-BASED ANGLE SENSOR
Packaging: Cut Tape (CT)
Package / Case: 16-TSSOP (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Output: Wheatstone Bridge
Operating Temperature: -40°C ~ 125°C (TA)
Termination Style: Gull Wing
Voltage - Supply: 3V ~ 5.5V
Actuator Type: External Magnet, Not Included
Technology: Magnetoresistive
For Measuring: Angle
Supplier Device Package: PG-TDSO-16-1
Rotation Angle - Electrical, Mechanical: 0° ~ 360°, Continuous
Output Signal: Cosine, Sine
Part Status: Active
Description: GMR-BASED ANGLE SENSOR
Packaging: Cut Tape (CT)
Package / Case: 16-TSSOP (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Output: Wheatstone Bridge
Operating Temperature: -40°C ~ 125°C (TA)
Termination Style: Gull Wing
Voltage - Supply: 3V ~ 5.5V
Actuator Type: External Magnet, Not Included
Technology: Magnetoresistive
For Measuring: Angle
Supplier Device Package: PG-TDSO-16-1
Rotation Angle - Electrical, Mechanical: 0° ~ 360°, Continuous
Output Signal: Cosine, Sine
Part Status: Active
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| TLE5014SP16E0002XUMA1 |
![]() |
Hersteller: Infineon Technologies
Description: GMR-BASED ANGLE SENSOR
Packaging: Cut Tape (CT)
Package / Case: 16-TSSOP (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Output: Wheatstone Bridge
Operating Temperature: -40°C ~ 125°C (TA)
Termination Style: Gull Wing
Voltage - Supply: 3V ~ 5.5V
Actuator Type: External Magnet, Not Included
Technology: Magnetoresistive
For Measuring: Angle
Supplier Device Package: PG-TDSO-16-1
Rotation Angle - Electrical, Mechanical: 0° ~ 360°, Continuous
Output Signal: Cosine, Sine
Part Status: Active
Grade: Automotive
Qualification: AEC-Q100
Description: GMR-BASED ANGLE SENSOR
Packaging: Cut Tape (CT)
Package / Case: 16-TSSOP (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Output: Wheatstone Bridge
Operating Temperature: -40°C ~ 125°C (TA)
Termination Style: Gull Wing
Voltage - Supply: 3V ~ 5.5V
Actuator Type: External Magnet, Not Included
Technology: Magnetoresistive
For Measuring: Angle
Supplier Device Package: PG-TDSO-16-1
Rotation Angle - Electrical, Mechanical: 0° ~ 360°, Continuous
Output Signal: Cosine, Sine
Part Status: Active
Grade: Automotive
Qualification: AEC-Q100
auf Bestellung 64 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 4+ | 5.33 EUR |
| 5+ | 4.77 EUR |
| 10+ | 4.56 EUR |
| 25+ | 4.31 EUR |
| 50+ | 4.14 EUR |
| BSC0403NSATMA1 |
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Hersteller: Infineon Technologies
Description: 150V, N-CH MOSFET, LOGIC LEVEL,
Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 75 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V
Drain to Source Voltage (Vdss): 150 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Supplier Device Package: PG-TDSON-8-7
Vgs(th) (Max) @ Id: 4.6V @ 91µA
Power Dissipation (Max): 125W (Tc)
Rds On (Max) @ Id, Vgs: 11mOhm @ 35A, 10
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
Description: 150V, N-CH MOSFET, LOGIC LEVEL,
Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 75 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V
Drain to Source Voltage (Vdss): 150 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Supplier Device Package: PG-TDSON-8-7
Vgs(th) (Max) @ Id: 4.6V @ 91µA
Power Dissipation (Max): 125W (Tc)
Rds On (Max) @ Id, Vgs: 11mOhm @ 35A, 10
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| XDPS21071XUMA1 |
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Hersteller: Infineon Technologies
Description: DIGITAL FFR CONTROLLER, DSO12
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.154", 3.90mm Width), 12 Leads
Output Type: Transistor Driver
Mounting Type: Surface Mount
Function: Step-Up/Step-Down
Operating Temperature: -25°C ~ 125°C (TJ)
Output Configuration: Positive
Frequency - Switching: 24.9kHz ~ 139.4kHz
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 3.3V
Supplier Device Package: PG-DSO-12-20
Synchronous Rectifier: No
Control Features: Current Limit, Soft Start
Output Phases: 1
Clock Sync: No
Number of Outputs: 1
Description: DIGITAL FFR CONTROLLER, DSO12
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.154", 3.90mm Width), 12 Leads
Output Type: Transistor Driver
Mounting Type: Surface Mount
Function: Step-Up/Step-Down
Operating Temperature: -25°C ~ 125°C (TJ)
Output Configuration: Positive
Frequency - Switching: 24.9kHz ~ 139.4kHz
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 3.3V
Supplier Device Package: PG-DSO-12-20
Synchronous Rectifier: No
Control Features: Current Limit, Soft Start
Output Phases: 1
Clock Sync: No
Number of Outputs: 1
Produkt ist nicht verfügbar
Im Einkaufswagen
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