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ASP1257-S08T Infineon Technologies Description: IC REGULATOR PG-VQFN-48-900
Packaging: Tape & Reel (TR)
Part Status: Obsolete
Produkt ist nicht verfügbar
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ASP1257-W08T Infineon Technologies Description: IC REGULATOR PG-VQFN-48-900
Produkt ist nicht verfügbar
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IR3536MMT02TRP Infineon Technologies IR3536%2C38_CHL8326%2C28_v1.09_6-21-13.pdf Description: IC REG CTRLR DDR 2OUT 48VQFN
Packaging: Tape & Reel (TR)
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Number of Outputs: 2
Voltage - Input: 3.3V
Operating Temperature: -20°C ~ 85°C (TA)
Applications: Controller, DDR, Intel VR12, AMD SVI, PVI
Supplier Device Package: PG-VQFN-48-901
Produkt ist nicht verfügbar
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IR3536MSG06TRP Infineon Technologies IR3536,38_CHL8326,28_v1.09_6-21-13.pdf Description: IC REG CTRLR DDR 2OUT 48VQFN
Produkt ist nicht verfügbar
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IR3536MSM02TRP Infineon Technologies IR3536%2C38_CHL8326%2C28_v1.09_6-21-13.pdf Description: IC REG CTRLR DDR 2OUT 48VQFN
Packaging: Tape & Reel (TR)
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Number of Outputs: 2
Voltage - Input: 3.3V
Operating Temperature: -20°C ~ 85°C (TA)
Applications: Controller, DDR, Intel VR12, AMD SVI, PVI
Supplier Device Package: PG-VQFN-48-901
Produkt ist nicht verfügbar
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IR3536MTYPBF Infineon Technologies IR3536%2C38_CHL8326%2C28_v1.09_6-21-13.pdf Description: IC REG CTRLR DDR 2OUT 48VQFN
Packaging: Tape & Reel (TR)
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Number of Outputs: 2
Voltage - Input: 3.3V
Operating Temperature: -20°C ~ 85°C (TA)
Applications: Controller, DDR, Intel VR12, AMD SVI, PVI
Supplier Device Package: PG-VQFN-48-901
Part Status: Obsolete
Produkt ist nicht verfügbar
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ASP1211-A44NT Infineon Technologies Description: IC REGULATOR PG-VQFN-56-901
Produkt ist nicht verfügbar
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ASP1211-A80DT Infineon Technologies Description: IC REGULATOR PG-VQFN-56-901
Produkt ist nicht verfügbar
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ASP1212-N40NT ASP1212-N40NT Infineon Technologies ASP1212_V1.06_12-16-12.pdf Description: IC REG CTRLR VR11 1OUT 56VQFN
Packaging: Tape & Reel (TR)
Package / Case: 40-PowerLFQFN
Mounting Type: Surface Mount
Number of Outputs: 1
Voltage - Input: 3.3V
Operating Temperature: 0°C ~ 85°C (TA)
Applications: Controller, Intel VR11, VR11.1, AMD CPU
Supplier Device Package: 40-LQFN-CLIP (7x5)
Produkt ist nicht verfügbar
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ASP1212-N80NT ASP1212-N80NT Infineon Technologies ASP1212_V1.06_12-16-12.pdf Description: IC REG CTRLR VR11 1OUT 56VQFN
Packaging: Tape & Reel (TR)
Package / Case: 56-VFQFN Exposed Pad
Mounting Type: Surface Mount
Number of Outputs: 1
Voltage - Input: 3.3V
Operating Temperature: 0°C ~ 85°C (TA)
Applications: Controller, Intel VR11, VR11.1, AMD CPU
Supplier Device Package: PG-VQFN-56-901
Produkt ist nicht verfügbar
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CHL8228G-10CRT CHL8228G-10CRT Infineon Technologies CHL8225G_8G_V1.12_6-21-13.pdf Description: IC REG CTRLR GPU 2OUT 56VQFN
Packaging: Tape & Reel (TR)
Package / Case: 56-VFQFN Exposed Pad
Mounting Type: Surface Mount
Number of Outputs: 2
Voltage - Input: 3.3V
Operating Temperature: 0°C ~ 85°C (TA)
Applications: Controller, GPU Core Power
Supplier Device Package: PG-VQFN-56-901
Produkt ist nicht verfügbar
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CHL8228G-14CRT Infineon Technologies CHL8225G_8G_V1.12_6-21-13.pdf Description: IC REGULATOR PG-VQFN-56-901
Produkt ist nicht verfügbar
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CHL8328-10CRT CHL8328-10CRT Infineon Technologies IR3536,38_CHL8326,28_v1.09_6-21-13.pdf Description: IC REG CTRLR DDR 2OUT 56VQFN
Produkt ist nicht verfügbar
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CHL8328-14CRT CHL8328-14CRT Infineon Technologies IR3536%2C38_CHL8326%2C28_v1.09_6-21-13.pdf Description: IC REG CTRLR DDR 2OUT 56VQFN
Packaging: Tape & Reel (TR)
Package / Case: 56-VFQFN Exposed Pad
Mounting Type: Surface Mount
Number of Outputs: 2
Voltage - Input: 3.3V
Operating Temperature: -20°C ~ 85°C (TA)
Applications: Controller, DDR, Intel VR12, AMD SVI, PVI
Supplier Device Package: PG-VQFN-56-901
Part Status: Obsolete
Produkt ist nicht verfügbar
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CHL8328-16CRT CHL8328-16CRT Infineon Technologies IR3536%2C38_CHL8326%2C28_v1.09_6-21-13.pdf Description: IC REG CTRLR DDR 2OUT 56VQFN
Packaging: Tape & Reel (TR)
Package / Case: 56-VFQFN Exposed Pad
Mounting Type: Surface Mount
Number of Outputs: 2
Voltage - Input: 3.3V
Operating Temperature: -20°C ~ 85°C (TA)
Applications: Controller, DDR, Intel VR12, AMD SVI, PVI
Supplier Device Package: PG-VQFN-56-901
Produkt ist nicht verfügbar
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CHL8328-20CRT CHL8328-20CRT Infineon Technologies IR3536,38_CHL8326,28_v1.09_6-21-13.pdf Description: IC REG CTRLR DDR 2OUT 56VQFN
Packaging: Tape & Reel (TR)
Package / Case: 56-VFQFN Exposed Pad
Mounting Type: Surface Mount
Number of Outputs: 2
Voltage - Input: 3.3V
Operating Temperature: -20°C ~ 85°C (TA)
Applications: Controller, DDR, Intel VR12, AMD SVI, PVI
Supplier Device Package: PG-VQFN-56-901
Part Status: Obsolete
Produkt ist nicht verfügbar
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CHL8328-24CRT CHL8328-24CRT Infineon Technologies IR3536%2C38_CHL8326%2C28_v1.09_6-21-13.pdf Description: IC REG CTRLR DDR 2OUT 56VQFN
Packaging: Tape & Reel (TR)
Package / Case: 56-VFQFN Exposed Pad
Mounting Type: Surface Mount
Number of Outputs: 2
Voltage - Input: 3.3V
Operating Temperature: -20°C ~ 85°C (TA)
Applications: Controller, DDR, Intel VR12, AMD SVI, PVI
Supplier Device Package: PG-VQFN-56-901
Part Status: Obsolete
Produkt ist nicht verfügbar
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CHL8328-32CRT CHL8328-32CRT Infineon Technologies IR3536,38_CHL8326,28_v1.09_6-21-13.pdf Description: IC REG CTRLR DDR 2OUT 56VQFN
Produkt ist nicht verfügbar
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IKW40N120CS6XKSA1 IKW40N120CS6XKSA1 Infineon Technologies Infineon-IKW40N120CS6-DS-v02_01-EN.pdf?fileId=5546d462636cc8fb01638801e23716c0 Description: IGBT TRENCH FS 1200V 80A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 400 ns
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 40A
Supplier Device Package: PG-TO247-3-41
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 27ns/315ns
Switching Energy: 2.55mJ (on), 1.55mJ (off)
Test Condition: 600V, 40A, 9Ohm, 15V
Gate Charge: 285 nC
Part Status: Active
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 160 A
Power - Max: 500 W
auf Bestellung 372 Stücke:
Lieferzeit 10-14 Tag (e)
2+11.62 EUR
30+6.71 EUR
120+5.63 EUR
Mindestbestellmenge: 2
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IKY40N120CS6XKSA1 IKY40N120CS6XKSA1 Infineon Technologies Infineon-IKY40N120CS6-DS-v02_01-EN.pdf?fileId=5546d462636cc8fb01638801f18416c3 Description: IGBT TRENCH FS 1200V 80A TO247-4
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 255 ns
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 40A
Supplier Device Package: PG-TO247-4-2
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 27ns/315ns
Switching Energy: 1.45mJ (on), 1.55mJ (off)
Test Condition: 600V, 40A, 9Ohm, 15V
Gate Charge: 285 nC
Part Status: Active
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 160 A
Power - Max: 500 W
auf Bestellung 713 Stücke:
Lieferzeit 10-14 Tag (e)
2+12.11 EUR
30+7.02 EUR
120+5.90 EUR
510+5.15 EUR
Mindestbestellmenge: 2
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IKY75N120CS6XKSA1 IKY75N120CS6XKSA1 Infineon Technologies Infineon-IKY75N120CS6-DS-v02_01-EN.pdf?fileId=5546d462636cc8fb016388021f2616cf Description: IGBT TRENCH FS 1200V 150A TO247
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 205 ns
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 75A
Supplier Device Package: PG-TO247-4-2
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 32ns/300ns
Switching Energy: 2.2mJ (on), 2.95mJ (off)
Test Condition: 600V, 75A, 4Ohm, 15V
Gate Charge: 530 nC
Part Status: Active
Current - Collector (Ic) (Max): 150 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 300 A
Power - Max: 880 W
auf Bestellung 113 Stücke:
Lieferzeit 10-14 Tag (e)
2+16.00 EUR
30+9.50 EUR
Mindestbestellmenge: 2
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ICL5102XUMA2 ICL5102XUMA2 Infineon Technologies ICL5102.pdf Description: IC LED DRIVER OFFL NO 16DSO
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Number of Outputs: 1
Frequency: 1.3MHz
Type: AC DC Offline Switcher
Operating Temperature: -40°C ~ 125°C (TJ)
Applications: LED Lighting
Internal Switch(s): No
Topology: Half-Bridge
Supplier Device Package: PG-DSO-16-23
Dimming: No
Voltage - Supply (Min): 8.5V
Voltage - Supply (Max): 18V
Part Status: Active
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
2500+1.97 EUR
Mindestbestellmenge: 2500
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ICL5102XUMA2 ICL5102XUMA2 Infineon Technologies ICL5102.pdf Description: IC LED DRIVER OFFL NO 16DSO
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Number of Outputs: 1
Frequency: 1.3MHz
Type: AC DC Offline Switcher
Operating Temperature: -40°C ~ 125°C (TJ)
Applications: LED Lighting
Internal Switch(s): No
Topology: Half-Bridge
Supplier Device Package: PG-DSO-16-23
Dimming: No
Voltage - Supply (Min): 8.5V
Voltage - Supply (Max): 18V
Part Status: Active
auf Bestellung 4887 Stücke:
Lieferzeit 10-14 Tag (e)
5+4.15 EUR
10+3.09 EUR
25+2.83 EUR
100+2.53 EUR
250+2.39 EUR
500+2.31 EUR
1000+2.24 EUR
Mindestbestellmenge: 5
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1EDN7550BXTSA1 1EDN7550BXTSA1 Infineon Technologies Infineon-1EDN7550B-DS-v02_00-EN.pdf?fileId=5546d46262b31d2e01635d9799ef264f Description: IC GATE DRVR HIGH-SIDE SOT23-6
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 4.5V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 84 V
Supplier Device Package: PG-SOT23-6
Rise / Fall Time (Typ): 6.5ns, 4.5ns
Channel Type: Single
Driven Configuration: High-Side
Number of Drivers: 1
Gate Type: MOSFET (N-Channel, P-Channel)
Current - Peak Output (Source, Sink): 4A, 8A
Part Status: Active
DigiKey Programmable: Not Verified
auf Bestellung 3908 Stücke:
Lieferzeit 10-14 Tag (e)
17+1.04 EUR
24+0.74 EUR
27+0.66 EUR
100+0.58 EUR
250+0.54 EUR
500+0.51 EUR
1000+0.49 EUR
Mindestbestellmenge: 17
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1EDN8550BXTSA1 1EDN8550BXTSA1 Infineon Technologies Infineon-1EDN7550B-DS-v02_00-EN.pdf?fileId=5546d46262b31d2e01635d9799ef264f Description: IC GATE DRVR HIGH-SIDE SOT23-6
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 4.5V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 84 V
Supplier Device Package: PG-SOT23-6
Rise / Fall Time (Typ): 6.5ns, 4.5ns
Channel Type: Single
Driven Configuration: High-Side
Number of Drivers: 1
Gate Type: MOSFET (N-Channel, P-Channel)
Current - Peak Output (Source, Sink): 4A, 8A
Part Status: Active
DigiKey Programmable: Not Verified
auf Bestellung 3699 Stücke:
Lieferzeit 10-14 Tag (e)
17+1.04 EUR
24+0.74 EUR
27+0.66 EUR
100+0.58 EUR
250+0.54 EUR
500+0.51 EUR
1000+0.49 EUR
Mindestbestellmenge: 17
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2EDF7275FXUMA1 2EDF7275FXUMA1 Infineon Technologies Infineon-2EDF7175F-DS-v02_00-EN.pdf?fileId=5546d462636cc8fb0163b09026be3060 Description: IC GATE DRVR HALF-BRIDG DSO16-11
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 20V
Input Type: Non-Inverting
Supplier Device Package: PG-DSO-16-11
Rise / Fall Time (Typ): 6.5ns, 4.5ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: MOSFET (N-Channel, P-Channel)
Logic Voltage - VIL, VIH: -, 1.65V
Current - Peak Output (Source, Sink): 4A, 8A
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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IPD95R2K0P7ATMA1 IPD95R2K0P7ATMA1 Infineon Technologies Infineon-IPD95R2K0P7-DS-v02_01-EN.pdf?fileId=5546d462636cc8fb016436fe9ce05009 Description: MOSFET N-CH 950V 4A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Rds On (Max) @ Id, Vgs: 2Ohm @ 1.7A, 10V
Power Dissipation (Max): 37W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 80µA
Supplier Device Package: PG-TO252-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 950 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 330 pF @ 400 V
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)
2500+0.69 EUR
7500+0.63 EUR
Mindestbestellmenge: 2500
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IPD95R1K2P7ATMA1 IPD95R1K2P7ATMA1 Infineon Technologies Infineon-IPD95R1K2P7-DS-v02_01-EN.pdf?fileId=5546d462636cc8fb01643b928d27571a Description: MOSFET N-CH 950V 6A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 2.7A, 10V
Power Dissipation (Max): 52W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 140µA
Supplier Device Package: PG-TO252-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 950 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 478 pF @ 400 V
Produkt ist nicht verfügbar
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IPD95R750P7ATMA1 IPD95R750P7ATMA1 Infineon Technologies Infineon-IPD95R750P7-DS-v02_01-EN.pdf?fileId=5546d462636cc8fb01643b5f422356d1 Description: MOSFET N-CH 950V 9A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 750mOhm @ 4.5A, 10V
Power Dissipation (Max): 73W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 220µA
Supplier Device Package: PG-TO252-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 950 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 712 pF @ 400 V
Produkt ist nicht verfügbar
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IPD95R450P7ATMA1 IPD95R450P7ATMA1 Infineon Technologies Infineon-IPD95R450P7-DS-v02_01-EN.pdf?fileId=5546d462636cc8fb01643b1b778a55d4 Description: MOSFET N-CH 950V 14A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Rds On (Max) @ Id, Vgs: 450mOhm @ 7.2A, 10V
Power Dissipation (Max): 104W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 360µA
Supplier Device Package: PG-TO252-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 950 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1053 pF @ 400 V
Produkt ist nicht verfügbar
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IPU95R3K7P7AKMA1 IPU95R3K7P7AKMA1 Infineon Technologies Infineon-IPU95R3K7P7-DS-v02_00-EN.pdf?fileId=5546d462636cc8fb01643c3bd81e57e6 Description: MOSFET N-CH 950V 2A TO251-3
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Tc)
Rds On (Max) @ Id, Vgs: 3.7Ohm @ 800mA, 10V
Power Dissipation (Max): 22W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 40µA
Supplier Device Package: PG-TO251-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 950 V
Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 196 pF @ 400 V
auf Bestellung 797 Stücke:
Lieferzeit 10-14 Tag (e)
11+1.65 EUR
14+1.35 EUR
100+1.05 EUR
500+0.89 EUR
Mindestbestellmenge: 11
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IPU95R2K0P7AKMA1 IPU95R2K0P7AKMA1 Infineon Technologies Infineon-IPU95R2K0P7-DS-v02_00-EN.pdf?fileId=5546d462636cc8fb01643c32990d57bf Description: MOSFET N-CH 950V 4A TO251-3
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Rds On (Max) @ Id, Vgs: 2Ohm @ 1.7A, 10V
Power Dissipation (Max): 37W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 80µA
Supplier Device Package: PG-TO251-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 950 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 330 pF @ 400 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPU95R1K2P7AKMA1 IPU95R1K2P7AKMA1 Infineon Technologies Infineon-IPU95R1K2P7-DS-v02_00-EN.pdf?fileId=5546d462636cc8fb01643b6dc4e756f9 Description: MOSFET N-CH 950V 6A TO251-3
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 2.7A, 10V
Power Dissipation (Max): 52W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 140µA
Supplier Device Package: PG-TO251-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 950 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 478 pF @ 400 V
Produkt ist nicht verfügbar
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IPU95R750P7AKMA1 IPU95R750P7AKMA1 Infineon Technologies Infineon-IPU95R750P7-DS-v02_00-EN.pdf?fileId=5546d462636cc8fb01643c72ae5558d1 Description: MOSFET N-CH 950V 9A TO251-3
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 750mOhm @ 4.5A, 10V
Power Dissipation (Max): 73W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 220µA
Supplier Device Package: PG-TO251-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 950 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 712 pF @ 400 V
Produkt ist nicht verfügbar
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IPN95R3K7P7ATMA1 IPN95R3K7P7ATMA1 Infineon Technologies Infineon-IPN95R3K7P7-DS-v02_00-EN.pdf?fileId=5546d462636cc8fb01643b2dacda55d7 Description: MOSFET N-CH 950V 2A SOT223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Tc)
Rds On (Max) @ Id, Vgs: 3.7Ohm @ 800mA, 10V
Power Dissipation (Max): 6W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 40µA
Supplier Device Package: PG-SOT223
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 950 V
Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 196 pF @ 400 V
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.49 EUR
6000+0.46 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
IPN95R2K0P7ATMA1 IPN95R2K0P7ATMA1 Infineon Technologies Infineon-IPN95R2K0P7-DS-v02_00-EN.pdf?fileId=5546d462636cc8fb01643719f9a8500c Description: MOSFET N-CH 950V 4A SOT223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Rds On (Max) @ Id, Vgs: 2Ohm @ 1.7A, 10V
Power Dissipation (Max): 7W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 80µA
Supplier Device Package: PG-SOT223
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 950 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 330 pF @ 400 V
auf Bestellung 18000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.61 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
IPD95R2K0P7ATMA1 IPD95R2K0P7ATMA1 Infineon Technologies Infineon-IPD95R2K0P7-DS-v02_01-EN.pdf?fileId=5546d462636cc8fb016436fe9ce05009 Description: MOSFET N-CH 950V 4A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Rds On (Max) @ Id, Vgs: 2Ohm @ 1.7A, 10V
Power Dissipation (Max): 37W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 80µA
Supplier Device Package: PG-TO252-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 950 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 330 pF @ 400 V
auf Bestellung 12498 Stücke:
Lieferzeit 10-14 Tag (e)
8+2.41 EUR
12+1.60 EUR
100+1.10 EUR
500+0.84 EUR
1000+0.77 EUR
Mindestbestellmenge: 8
Im Einkaufswagen  Stück im Wert von  UAH
IPD95R1K2P7ATMA1 IPD95R1K2P7ATMA1 Infineon Technologies Infineon-IPD95R1K2P7-DS-v02_01-EN.pdf?fileId=5546d462636cc8fb01643b928d27571a Description: MOSFET N-CH 950V 6A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 2.7A, 10V
Power Dissipation (Max): 52W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 140µA
Supplier Device Package: PG-TO252-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 950 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 478 pF @ 400 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPD95R750P7ATMA1 IPD95R750P7ATMA1 Infineon Technologies Infineon-IPD95R750P7-DS-v02_01-EN.pdf?fileId=5546d462636cc8fb01643b5f422356d1 Description: MOSFET N-CH 950V 9A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 750mOhm @ 4.5A, 10V
Power Dissipation (Max): 73W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 220µA
Supplier Device Package: PG-TO252-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 950 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 712 pF @ 400 V
auf Bestellung 2183 Stücke:
Lieferzeit 10-14 Tag (e)
5+3.61 EUR
10+2.53 EUR
100+1.76 EUR
500+1.41 EUR
1000+1.30 EUR
Mindestbestellmenge: 5
Im Einkaufswagen  Stück im Wert von  UAH
IPD95R450P7ATMA1 IPD95R450P7ATMA1 Infineon Technologies Infineon-IPD95R450P7-DS-v02_01-EN.pdf?fileId=5546d462636cc8fb01643b1b778a55d4 Description: MOSFET N-CH 950V 14A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Rds On (Max) @ Id, Vgs: 450mOhm @ 7.2A, 10V
Power Dissipation (Max): 104W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 360µA
Supplier Device Package: PG-TO252-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 950 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1053 pF @ 400 V
auf Bestellung 1824 Stücke:
Lieferzeit 10-14 Tag (e)
4+5.02 EUR
10+3.29 EUR
100+2.28 EUR
500+1.85 EUR
1000+1.71 EUR
Mindestbestellmenge: 4
Im Einkaufswagen  Stück im Wert von  UAH
IPN95R3K7P7ATMA1 IPN95R3K7P7ATMA1 Infineon Technologies Infineon-IPN95R3K7P7-DS-v02_00-EN.pdf?fileId=5546d462636cc8fb01643b2dacda55d7 Description: MOSFET N-CH 950V 2A SOT223
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Tc)
Rds On (Max) @ Id, Vgs: 3.7Ohm @ 800mA, 10V
Power Dissipation (Max): 6W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 40µA
Supplier Device Package: PG-SOT223
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 950 V
Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 196 pF @ 400 V
auf Bestellung 7836 Stücke:
Lieferzeit 10-14 Tag (e)
14+1.30 EUR
18+0.99 EUR
100+0.73 EUR
500+0.64 EUR
1000+0.58 EUR
Mindestbestellmenge: 14
Im Einkaufswagen  Stück im Wert von  UAH
IPN95R2K0P7ATMA1 IPN95R2K0P7ATMA1 Infineon Technologies Infineon-IPN95R2K0P7-DS-v02_00-EN.pdf?fileId=5546d462636cc8fb01643719f9a8500c Description: MOSFET N-CH 950V 4A SOT223
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Rds On (Max) @ Id, Vgs: 2Ohm @ 1.7A, 10V
Power Dissipation (Max): 7W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 80µA
Supplier Device Package: PG-SOT223
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 950 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 330 pF @ 400 V
auf Bestellung 22455 Stücke:
Lieferzeit 10-14 Tag (e)
10+1.92 EUR
14+1.30 EUR
100+0.94 EUR
500+0.77 EUR
1000+0.67 EUR
Mindestbestellmenge: 10
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EVALM3102TTOBO1 EVALM3102TTOBO1 Infineon Technologies Infineon-EVAL-M3-102T_User_Manual-AN-v01_01-EN.pdf?fileId=5546d462625a528f01629491cef239b7 Description: EVAL BOARD FOR IMC102
Packaging: Bulk
Function: Motor Controller/Driver
Type: Power Management
Contents: Board(s)
Utilized IC / Part: IMC102
Supplied Contents: Board(s)
Part Status: Obsolete
Produkt ist nicht verfügbar
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IPB65R045C7ATMA2 IPB65R045C7ATMA2 Infineon Technologies Infineon-IPB65R045C7-DS-v02_01-en.pdf?fileId=db3a30433e78ea82013e790478550043 Description: MOSFET N-CH 650V 46A TO263-3
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 46A (Tc)
Rds On (Max) @ Id, Vgs: 45mOhm @ 24.9A, 10V
Power Dissipation (Max): 227W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1.25mA
Supplier Device Package: PG-TO263-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 93 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4340 pF @ 400 V
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
1000+8.36 EUR
Mindestbestellmenge: 1000
Im Einkaufswagen  Stück im Wert von  UAH
IPB65R065C7ATMA2 IPB65R065C7ATMA2 Infineon Technologies Infineon-IPB65R065C7-DS-v02_00-en.pdf?fileId=db3a304341e0aed001420483e2ab1788 Description: MOSFET N-CH 650V 33A TO263-3
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 33A (Tc)
Rds On (Max) @ Id, Vgs: 65mOhm @ 17.1A, 10V
Power Dissipation (Max): 171W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 200µA
Supplier Device Package: PG-TO263-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3020 pF @ 400 V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
1000+5.60 EUR
Mindestbestellmenge: 1000
Im Einkaufswagen  Stück im Wert von  UAH
IPB65R095C7ATMA2 IPB65R095C7ATMA2 Infineon Technologies Infineon-IPB65R095C7-DS-v02_00-en.pdf?fileId=db3a30434208e5fd0142092311ad00e6 Description: MOSFET N-CH 650V 24A TO263-3
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 95mOhm @ 11.8A, 10V
Power Dissipation (Max): 128W (Tc)
Vgs(th) (Max) @ Id: 4V @ 590µA
Supplier Device Package: PG-TO263-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2140 pF @ 400 V
auf Bestellung 2000 Stücke:
Lieferzeit 10-14 Tag (e)
1000+3.98 EUR
Mindestbestellmenge: 1000
Im Einkaufswagen  Stück im Wert von  UAH
IPB65R125C7ATMA2 IPB65R125C7ATMA2 Infineon Technologies Infineon-IPB65R125C7-DS-v02_00-en.pdf?fileId=db3a30434208e5fd0142094d378001a5 Description: MOSFET N-CH 650V 18A TO263-3
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 125mOhm @ 8.9A, 10V
Power Dissipation (Max): 101W (Tc)
Vgs(th) (Max) @ Id: 4V @ 440µA
Supplier Device Package: PG-TO263-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1670 pF @ 400 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPB65R190C7ATMA2 IPB65R190C7ATMA2 Infineon Technologies Infineon-IPB65R190C7-DS-v02_01-en.pdf?fileId=db3a30434208e5fd0142095ff92801d1 Description: MOSFET N-CH 650V 13A TO263-3
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 5.7A, 10V
Power Dissipation (Max): 72W (Tc)
Vgs(th) (Max) @ Id: 4V @ 290µA
Supplier Device Package: PG-TO263-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1150 pF @ 400 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPB65R225C7ATMA2 IPB65R225C7ATMA2 Infineon Technologies Infineon-IPB65R225C7-DS-v02_00-en.pdf?fileId=db3a30433e78ea82013e7921c0d800bc Description: MOSFET N-CH 650V 11A TO263-3
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 225mOhm @ 4.8A, 10V
Power Dissipation (Max): 63W (Tc)
Vgs(th) (Max) @ Id: 4V @ 240µA
Supplier Device Package: PG-TO263-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 996 pF @ 400 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPB65R045C7ATMA2 IPB65R045C7ATMA2 Infineon Technologies Infineon-IPB65R045C7-DS-v02_01-en.pdf?fileId=db3a30433e78ea82013e790478550043 Description: MOSFET N-CH 650V 46A TO263-3
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 46A (Tc)
Rds On (Max) @ Id, Vgs: 45mOhm @ 24.9A, 10V
Power Dissipation (Max): 227W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1.25mA
Supplier Device Package: PG-TO263-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 93 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4340 pF @ 400 V
auf Bestellung 1648 Stücke:
Lieferzeit 10-14 Tag (e)
2+16.88 EUR
10+11.84 EUR
100+8.83 EUR
500+8.36 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
IPB65R065C7ATMA2 IPB65R065C7ATMA2 Infineon Technologies Infineon-IPB65R065C7-DS-v02_00-en.pdf?fileId=db3a304341e0aed001420483e2ab1788 Description: MOSFET N-CH 650V 33A TO263-3
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 33A (Tc)
Rds On (Max) @ Id, Vgs: 65mOhm @ 17.1A, 10V
Power Dissipation (Max): 171W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 200µA
Supplier Device Package: PG-TO263-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3020 pF @ 400 V
auf Bestellung 3386 Stücke:
Lieferzeit 10-14 Tag (e)
2+11.04 EUR
10+7.84 EUR
100+6.35 EUR
500+5.60 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
IPB65R095C7ATMA2 IPB65R095C7ATMA2 Infineon Technologies Infineon-IPB65R095C7-DS-v02_00-en.pdf?fileId=db3a30434208e5fd0142092311ad00e6 Description: MOSFET N-CH 650V 24A TO263-3
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 95mOhm @ 11.8A, 10V
Power Dissipation (Max): 128W (Tc)
Vgs(th) (Max) @ Id: 4V @ 590µA
Supplier Device Package: PG-TO263-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2140 pF @ 400 V
auf Bestellung 2412 Stücke:
Lieferzeit 10-14 Tag (e)
2+9.66 EUR
10+6.48 EUR
100+4.66 EUR
500+3.89 EUR
Mindestbestellmenge: 2
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IPB65R190C7ATMA2 IPB65R190C7ATMA2 Infineon Technologies Infineon-IPB65R190C7-DS-v02_01-en.pdf?fileId=db3a30434208e5fd0142095ff92801d1 Description: MOSFET N-CH 650V 13A TO263-3
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 5.7A, 10V
Power Dissipation (Max): 72W (Tc)
Vgs(th) (Max) @ Id: 4V @ 290µA
Supplier Device Package: PG-TO263-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1150 pF @ 400 V
auf Bestellung 363 Stücke:
Lieferzeit 10-14 Tag (e)
4+4.73 EUR
10+3.25 EUR
100+2.56 EUR
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CG7497AAT Infineon Technologies Description: IC MCU CAPSENSE
Packaging: Tape & Reel (TR)
Part Status: Obsolete
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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MB90F394HPMT-GS-N2E1 MB90F394HPMT-GS-N2E1 Infineon Technologies Description: IC MCU 16BIT 384KB FLASH 120LQFP
Packaging: Bulk
Package / Case: 120-LQFP
Mounting Type: Surface Mount
Speed: 24MHz
Program Memory Size: 384KB (384K x 8)
RAM Size: 10K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
Core Processor: F²MC-16LX
Data Converters: A/D 15x8/10b
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 3.5V ~ 5.5V
Connectivity: CANbus, LINbus, SCI, Serial I/O, UART/USART
Peripherals: POR, PWM, WDT
Supplier Device Package: 120-LQFP (16x16)
Number of I/O: 96
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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MB91195ABGL-G-258-K8ERE1 Infineon Technologies Description: IC MICROCONTROLLER
Packaging: Bulk
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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V29F010B-120PC Infineon Technologies Description: IC MEMORY NOR
Packaging: Bulk
Part Status: Obsolete
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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V29F400BT-150SC Infineon Technologies Description: IC MEMORY NOR
Packaging: Bulk
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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CG7497AA Infineon Technologies Description: IC MCU CAPSENSE
Packaging: Tray
Part Status: Obsolete
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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TDA21232AUMA1 Infineon Technologies Description: IC MOSFET DRIVER 40PIQFN
Produkt ist nicht verfügbar
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ASP1257-S08T
Hersteller: Infineon Technologies
Description: IC REGULATOR PG-VQFN-48-900
Packaging: Tape & Reel (TR)
Part Status: Obsolete
Produkt ist nicht verfügbar
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ASP1257-W08T
Hersteller: Infineon Technologies
Description: IC REGULATOR PG-VQFN-48-900
Produkt ist nicht verfügbar
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IR3536MMT02TRP IR3536%2C38_CHL8326%2C28_v1.09_6-21-13.pdf
Hersteller: Infineon Technologies
Description: IC REG CTRLR DDR 2OUT 48VQFN
Packaging: Tape & Reel (TR)
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Number of Outputs: 2
Voltage - Input: 3.3V
Operating Temperature: -20°C ~ 85°C (TA)
Applications: Controller, DDR, Intel VR12, AMD SVI, PVI
Supplier Device Package: PG-VQFN-48-901
Produkt ist nicht verfügbar
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IR3536MSG06TRP IR3536,38_CHL8326,28_v1.09_6-21-13.pdf
Hersteller: Infineon Technologies
Description: IC REG CTRLR DDR 2OUT 48VQFN
Produkt ist nicht verfügbar
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IR3536MSM02TRP IR3536%2C38_CHL8326%2C28_v1.09_6-21-13.pdf
Hersteller: Infineon Technologies
Description: IC REG CTRLR DDR 2OUT 48VQFN
Packaging: Tape & Reel (TR)
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Number of Outputs: 2
Voltage - Input: 3.3V
Operating Temperature: -20°C ~ 85°C (TA)
Applications: Controller, DDR, Intel VR12, AMD SVI, PVI
Supplier Device Package: PG-VQFN-48-901
Produkt ist nicht verfügbar
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IR3536MTYPBF IR3536%2C38_CHL8326%2C28_v1.09_6-21-13.pdf
Hersteller: Infineon Technologies
Description: IC REG CTRLR DDR 2OUT 48VQFN
Packaging: Tape & Reel (TR)
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Number of Outputs: 2
Voltage - Input: 3.3V
Operating Temperature: -20°C ~ 85°C (TA)
Applications: Controller, DDR, Intel VR12, AMD SVI, PVI
Supplier Device Package: PG-VQFN-48-901
Part Status: Obsolete
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
ASP1211-A44NT
Hersteller: Infineon Technologies
Description: IC REGULATOR PG-VQFN-56-901
Produkt ist nicht verfügbar
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ASP1211-A80DT
Hersteller: Infineon Technologies
Description: IC REGULATOR PG-VQFN-56-901
Produkt ist nicht verfügbar
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ASP1212-N40NT ASP1212_V1.06_12-16-12.pdf
ASP1212-N40NT
Hersteller: Infineon Technologies
Description: IC REG CTRLR VR11 1OUT 56VQFN
Packaging: Tape & Reel (TR)
Package / Case: 40-PowerLFQFN
Mounting Type: Surface Mount
Number of Outputs: 1
Voltage - Input: 3.3V
Operating Temperature: 0°C ~ 85°C (TA)
Applications: Controller, Intel VR11, VR11.1, AMD CPU
Supplier Device Package: 40-LQFN-CLIP (7x5)
Produkt ist nicht verfügbar
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ASP1212-N80NT ASP1212_V1.06_12-16-12.pdf
ASP1212-N80NT
Hersteller: Infineon Technologies
Description: IC REG CTRLR VR11 1OUT 56VQFN
Packaging: Tape & Reel (TR)
Package / Case: 56-VFQFN Exposed Pad
Mounting Type: Surface Mount
Number of Outputs: 1
Voltage - Input: 3.3V
Operating Temperature: 0°C ~ 85°C (TA)
Applications: Controller, Intel VR11, VR11.1, AMD CPU
Supplier Device Package: PG-VQFN-56-901
Produkt ist nicht verfügbar
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CHL8228G-10CRT CHL8225G_8G_V1.12_6-21-13.pdf
CHL8228G-10CRT
Hersteller: Infineon Technologies
Description: IC REG CTRLR GPU 2OUT 56VQFN
Packaging: Tape & Reel (TR)
Package / Case: 56-VFQFN Exposed Pad
Mounting Type: Surface Mount
Number of Outputs: 2
Voltage - Input: 3.3V
Operating Temperature: 0°C ~ 85°C (TA)
Applications: Controller, GPU Core Power
Supplier Device Package: PG-VQFN-56-901
Produkt ist nicht verfügbar
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CHL8228G-14CRT CHL8225G_8G_V1.12_6-21-13.pdf
Hersteller: Infineon Technologies
Description: IC REGULATOR PG-VQFN-56-901
Produkt ist nicht verfügbar
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CHL8328-10CRT IR3536,38_CHL8326,28_v1.09_6-21-13.pdf
CHL8328-10CRT
Hersteller: Infineon Technologies
Description: IC REG CTRLR DDR 2OUT 56VQFN
Produkt ist nicht verfügbar
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CHL8328-14CRT IR3536%2C38_CHL8326%2C28_v1.09_6-21-13.pdf
CHL8328-14CRT
Hersteller: Infineon Technologies
Description: IC REG CTRLR DDR 2OUT 56VQFN
Packaging: Tape & Reel (TR)
Package / Case: 56-VFQFN Exposed Pad
Mounting Type: Surface Mount
Number of Outputs: 2
Voltage - Input: 3.3V
Operating Temperature: -20°C ~ 85°C (TA)
Applications: Controller, DDR, Intel VR12, AMD SVI, PVI
Supplier Device Package: PG-VQFN-56-901
Part Status: Obsolete
Produkt ist nicht verfügbar
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CHL8328-16CRT IR3536%2C38_CHL8326%2C28_v1.09_6-21-13.pdf
CHL8328-16CRT
Hersteller: Infineon Technologies
Description: IC REG CTRLR DDR 2OUT 56VQFN
Packaging: Tape & Reel (TR)
Package / Case: 56-VFQFN Exposed Pad
Mounting Type: Surface Mount
Number of Outputs: 2
Voltage - Input: 3.3V
Operating Temperature: -20°C ~ 85°C (TA)
Applications: Controller, DDR, Intel VR12, AMD SVI, PVI
Supplier Device Package: PG-VQFN-56-901
Produkt ist nicht verfügbar
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CHL8328-20CRT IR3536,38_CHL8326,28_v1.09_6-21-13.pdf
CHL8328-20CRT
Hersteller: Infineon Technologies
Description: IC REG CTRLR DDR 2OUT 56VQFN
Packaging: Tape & Reel (TR)
Package / Case: 56-VFQFN Exposed Pad
Mounting Type: Surface Mount
Number of Outputs: 2
Voltage - Input: 3.3V
Operating Temperature: -20°C ~ 85°C (TA)
Applications: Controller, DDR, Intel VR12, AMD SVI, PVI
Supplier Device Package: PG-VQFN-56-901
Part Status: Obsolete
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
CHL8328-24CRT IR3536%2C38_CHL8326%2C28_v1.09_6-21-13.pdf
CHL8328-24CRT
Hersteller: Infineon Technologies
Description: IC REG CTRLR DDR 2OUT 56VQFN
Packaging: Tape & Reel (TR)
Package / Case: 56-VFQFN Exposed Pad
Mounting Type: Surface Mount
Number of Outputs: 2
Voltage - Input: 3.3V
Operating Temperature: -20°C ~ 85°C (TA)
Applications: Controller, DDR, Intel VR12, AMD SVI, PVI
Supplier Device Package: PG-VQFN-56-901
Part Status: Obsolete
Produkt ist nicht verfügbar
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CHL8328-32CRT IR3536,38_CHL8326,28_v1.09_6-21-13.pdf
CHL8328-32CRT
Hersteller: Infineon Technologies
Description: IC REG CTRLR DDR 2OUT 56VQFN
Produkt ist nicht verfügbar
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IKW40N120CS6XKSA1 Infineon-IKW40N120CS6-DS-v02_01-EN.pdf?fileId=5546d462636cc8fb01638801e23716c0
IKW40N120CS6XKSA1
Hersteller: Infineon Technologies
Description: IGBT TRENCH FS 1200V 80A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 400 ns
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 40A
Supplier Device Package: PG-TO247-3-41
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 27ns/315ns
Switching Energy: 2.55mJ (on), 1.55mJ (off)
Test Condition: 600V, 40A, 9Ohm, 15V
Gate Charge: 285 nC
Part Status: Active
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 160 A
Power - Max: 500 W
auf Bestellung 372 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+11.62 EUR
30+6.71 EUR
120+5.63 EUR
Mindestbestellmenge: 2
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IKY40N120CS6XKSA1 Infineon-IKY40N120CS6-DS-v02_01-EN.pdf?fileId=5546d462636cc8fb01638801f18416c3
IKY40N120CS6XKSA1
Hersteller: Infineon Technologies
Description: IGBT TRENCH FS 1200V 80A TO247-4
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 255 ns
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 40A
Supplier Device Package: PG-TO247-4-2
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 27ns/315ns
Switching Energy: 1.45mJ (on), 1.55mJ (off)
Test Condition: 600V, 40A, 9Ohm, 15V
Gate Charge: 285 nC
Part Status: Active
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 160 A
Power - Max: 500 W
auf Bestellung 713 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+12.11 EUR
30+7.02 EUR
120+5.90 EUR
510+5.15 EUR
Mindestbestellmenge: 2
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IKY75N120CS6XKSA1 Infineon-IKY75N120CS6-DS-v02_01-EN.pdf?fileId=5546d462636cc8fb016388021f2616cf
IKY75N120CS6XKSA1
Hersteller: Infineon Technologies
Description: IGBT TRENCH FS 1200V 150A TO247
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 205 ns
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 75A
Supplier Device Package: PG-TO247-4-2
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 32ns/300ns
Switching Energy: 2.2mJ (on), 2.95mJ (off)
Test Condition: 600V, 75A, 4Ohm, 15V
Gate Charge: 530 nC
Part Status: Active
Current - Collector (Ic) (Max): 150 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 300 A
Power - Max: 880 W
auf Bestellung 113 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+16.00 EUR
30+9.50 EUR
Mindestbestellmenge: 2
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ICL5102XUMA2 ICL5102.pdf
ICL5102XUMA2
Hersteller: Infineon Technologies
Description: IC LED DRIVER OFFL NO 16DSO
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Number of Outputs: 1
Frequency: 1.3MHz
Type: AC DC Offline Switcher
Operating Temperature: -40°C ~ 125°C (TJ)
Applications: LED Lighting
Internal Switch(s): No
Topology: Half-Bridge
Supplier Device Package: PG-DSO-16-23
Dimming: No
Voltage - Supply (Min): 8.5V
Voltage - Supply (Max): 18V
Part Status: Active
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2500+1.97 EUR
Mindestbestellmenge: 2500
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ICL5102XUMA2 ICL5102.pdf
ICL5102XUMA2
Hersteller: Infineon Technologies
Description: IC LED DRIVER OFFL NO 16DSO
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Number of Outputs: 1
Frequency: 1.3MHz
Type: AC DC Offline Switcher
Operating Temperature: -40°C ~ 125°C (TJ)
Applications: LED Lighting
Internal Switch(s): No
Topology: Half-Bridge
Supplier Device Package: PG-DSO-16-23
Dimming: No
Voltage - Supply (Min): 8.5V
Voltage - Supply (Max): 18V
Part Status: Active
auf Bestellung 4887 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5+4.15 EUR
10+3.09 EUR
25+2.83 EUR
100+2.53 EUR
250+2.39 EUR
500+2.31 EUR
1000+2.24 EUR
Mindestbestellmenge: 5
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1EDN7550BXTSA1 Infineon-1EDN7550B-DS-v02_00-EN.pdf?fileId=5546d46262b31d2e01635d9799ef264f
1EDN7550BXTSA1
Hersteller: Infineon Technologies
Description: IC GATE DRVR HIGH-SIDE SOT23-6
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 4.5V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 84 V
Supplier Device Package: PG-SOT23-6
Rise / Fall Time (Typ): 6.5ns, 4.5ns
Channel Type: Single
Driven Configuration: High-Side
Number of Drivers: 1
Gate Type: MOSFET (N-Channel, P-Channel)
Current - Peak Output (Source, Sink): 4A, 8A
Part Status: Active
DigiKey Programmable: Not Verified
auf Bestellung 3908 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
17+1.04 EUR
24+0.74 EUR
27+0.66 EUR
100+0.58 EUR
250+0.54 EUR
500+0.51 EUR
1000+0.49 EUR
Mindestbestellmenge: 17
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1EDN8550BXTSA1 Infineon-1EDN7550B-DS-v02_00-EN.pdf?fileId=5546d46262b31d2e01635d9799ef264f
1EDN8550BXTSA1
Hersteller: Infineon Technologies
Description: IC GATE DRVR HIGH-SIDE SOT23-6
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 4.5V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 84 V
Supplier Device Package: PG-SOT23-6
Rise / Fall Time (Typ): 6.5ns, 4.5ns
Channel Type: Single
Driven Configuration: High-Side
Number of Drivers: 1
Gate Type: MOSFET (N-Channel, P-Channel)
Current - Peak Output (Source, Sink): 4A, 8A
Part Status: Active
DigiKey Programmable: Not Verified
auf Bestellung 3699 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
17+1.04 EUR
24+0.74 EUR
27+0.66 EUR
100+0.58 EUR
250+0.54 EUR
500+0.51 EUR
1000+0.49 EUR
Mindestbestellmenge: 17
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2EDF7275FXUMA1 Infineon-2EDF7175F-DS-v02_00-EN.pdf?fileId=5546d462636cc8fb0163b09026be3060
2EDF7275FXUMA1
Hersteller: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDG DSO16-11
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 20V
Input Type: Non-Inverting
Supplier Device Package: PG-DSO-16-11
Rise / Fall Time (Typ): 6.5ns, 4.5ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: MOSFET (N-Channel, P-Channel)
Logic Voltage - VIL, VIH: -, 1.65V
Current - Peak Output (Source, Sink): 4A, 8A
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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IPD95R2K0P7ATMA1 Infineon-IPD95R2K0P7-DS-v02_01-EN.pdf?fileId=5546d462636cc8fb016436fe9ce05009
IPD95R2K0P7ATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 950V 4A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Rds On (Max) @ Id, Vgs: 2Ohm @ 1.7A, 10V
Power Dissipation (Max): 37W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 80µA
Supplier Device Package: PG-TO252-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 950 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 330 pF @ 400 V
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2500+0.69 EUR
7500+0.63 EUR
Mindestbestellmenge: 2500
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IPD95R1K2P7ATMA1 Infineon-IPD95R1K2P7-DS-v02_01-EN.pdf?fileId=5546d462636cc8fb01643b928d27571a
IPD95R1K2P7ATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 950V 6A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 2.7A, 10V
Power Dissipation (Max): 52W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 140µA
Supplier Device Package: PG-TO252-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 950 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 478 pF @ 400 V
Produkt ist nicht verfügbar
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IPD95R750P7ATMA1 Infineon-IPD95R750P7-DS-v02_01-EN.pdf?fileId=5546d462636cc8fb01643b5f422356d1
IPD95R750P7ATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 950V 9A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 750mOhm @ 4.5A, 10V
Power Dissipation (Max): 73W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 220µA
Supplier Device Package: PG-TO252-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 950 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 712 pF @ 400 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPD95R450P7ATMA1 Infineon-IPD95R450P7-DS-v02_01-EN.pdf?fileId=5546d462636cc8fb01643b1b778a55d4
IPD95R450P7ATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 950V 14A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Rds On (Max) @ Id, Vgs: 450mOhm @ 7.2A, 10V
Power Dissipation (Max): 104W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 360µA
Supplier Device Package: PG-TO252-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 950 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1053 pF @ 400 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPU95R3K7P7AKMA1 Infineon-IPU95R3K7P7-DS-v02_00-EN.pdf?fileId=5546d462636cc8fb01643c3bd81e57e6
IPU95R3K7P7AKMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 950V 2A TO251-3
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Tc)
Rds On (Max) @ Id, Vgs: 3.7Ohm @ 800mA, 10V
Power Dissipation (Max): 22W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 40µA
Supplier Device Package: PG-TO251-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 950 V
Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 196 pF @ 400 V
auf Bestellung 797 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
11+1.65 EUR
14+1.35 EUR
100+1.05 EUR
500+0.89 EUR
Mindestbestellmenge: 11
Im Einkaufswagen  Stück im Wert von  UAH
IPU95R2K0P7AKMA1 Infineon-IPU95R2K0P7-DS-v02_00-EN.pdf?fileId=5546d462636cc8fb01643c32990d57bf
IPU95R2K0P7AKMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 950V 4A TO251-3
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Rds On (Max) @ Id, Vgs: 2Ohm @ 1.7A, 10V
Power Dissipation (Max): 37W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 80µA
Supplier Device Package: PG-TO251-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 950 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 330 pF @ 400 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPU95R1K2P7AKMA1 Infineon-IPU95R1K2P7-DS-v02_00-EN.pdf?fileId=5546d462636cc8fb01643b6dc4e756f9
IPU95R1K2P7AKMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 950V 6A TO251-3
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 2.7A, 10V
Power Dissipation (Max): 52W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 140µA
Supplier Device Package: PG-TO251-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 950 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 478 pF @ 400 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPU95R750P7AKMA1 Infineon-IPU95R750P7-DS-v02_00-EN.pdf?fileId=5546d462636cc8fb01643c72ae5558d1
IPU95R750P7AKMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 950V 9A TO251-3
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 750mOhm @ 4.5A, 10V
Power Dissipation (Max): 73W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 220µA
Supplier Device Package: PG-TO251-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 950 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 712 pF @ 400 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPN95R3K7P7ATMA1 Infineon-IPN95R3K7P7-DS-v02_00-EN.pdf?fileId=5546d462636cc8fb01643b2dacda55d7
IPN95R3K7P7ATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 950V 2A SOT223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Tc)
Rds On (Max) @ Id, Vgs: 3.7Ohm @ 800mA, 10V
Power Dissipation (Max): 6W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 40µA
Supplier Device Package: PG-SOT223
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 950 V
Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 196 pF @ 400 V
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.49 EUR
6000+0.46 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
IPN95R2K0P7ATMA1 Infineon-IPN95R2K0P7-DS-v02_00-EN.pdf?fileId=5546d462636cc8fb01643719f9a8500c
IPN95R2K0P7ATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 950V 4A SOT223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Rds On (Max) @ Id, Vgs: 2Ohm @ 1.7A, 10V
Power Dissipation (Max): 7W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 80µA
Supplier Device Package: PG-SOT223
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 950 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 330 pF @ 400 V
auf Bestellung 18000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.61 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
IPD95R2K0P7ATMA1 Infineon-IPD95R2K0P7-DS-v02_01-EN.pdf?fileId=5546d462636cc8fb016436fe9ce05009
IPD95R2K0P7ATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 950V 4A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Rds On (Max) @ Id, Vgs: 2Ohm @ 1.7A, 10V
Power Dissipation (Max): 37W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 80µA
Supplier Device Package: PG-TO252-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 950 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 330 pF @ 400 V
auf Bestellung 12498 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
8+2.41 EUR
12+1.60 EUR
100+1.10 EUR
500+0.84 EUR
1000+0.77 EUR
Mindestbestellmenge: 8
Im Einkaufswagen  Stück im Wert von  UAH
IPD95R1K2P7ATMA1 Infineon-IPD95R1K2P7-DS-v02_01-EN.pdf?fileId=5546d462636cc8fb01643b928d27571a
IPD95R1K2P7ATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 950V 6A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 2.7A, 10V
Power Dissipation (Max): 52W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 140µA
Supplier Device Package: PG-TO252-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 950 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 478 pF @ 400 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPD95R750P7ATMA1 Infineon-IPD95R750P7-DS-v02_01-EN.pdf?fileId=5546d462636cc8fb01643b5f422356d1
IPD95R750P7ATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 950V 9A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 750mOhm @ 4.5A, 10V
Power Dissipation (Max): 73W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 220µA
Supplier Device Package: PG-TO252-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 950 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 712 pF @ 400 V
auf Bestellung 2183 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5+3.61 EUR
10+2.53 EUR
100+1.76 EUR
500+1.41 EUR
1000+1.30 EUR
Mindestbestellmenge: 5
Im Einkaufswagen  Stück im Wert von  UAH
IPD95R450P7ATMA1 Infineon-IPD95R450P7-DS-v02_01-EN.pdf?fileId=5546d462636cc8fb01643b1b778a55d4
IPD95R450P7ATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 950V 14A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Rds On (Max) @ Id, Vgs: 450mOhm @ 7.2A, 10V
Power Dissipation (Max): 104W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 360µA
Supplier Device Package: PG-TO252-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 950 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1053 pF @ 400 V
auf Bestellung 1824 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+5.02 EUR
10+3.29 EUR
100+2.28 EUR
500+1.85 EUR
1000+1.71 EUR
Mindestbestellmenge: 4
Im Einkaufswagen  Stück im Wert von  UAH
IPN95R3K7P7ATMA1 Infineon-IPN95R3K7P7-DS-v02_00-EN.pdf?fileId=5546d462636cc8fb01643b2dacda55d7
IPN95R3K7P7ATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 950V 2A SOT223
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Tc)
Rds On (Max) @ Id, Vgs: 3.7Ohm @ 800mA, 10V
Power Dissipation (Max): 6W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 40µA
Supplier Device Package: PG-SOT223
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 950 V
Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 196 pF @ 400 V
auf Bestellung 7836 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
14+1.30 EUR
18+0.99 EUR
100+0.73 EUR
500+0.64 EUR
1000+0.58 EUR
Mindestbestellmenge: 14
Im Einkaufswagen  Stück im Wert von  UAH
IPN95R2K0P7ATMA1 Infineon-IPN95R2K0P7-DS-v02_00-EN.pdf?fileId=5546d462636cc8fb01643719f9a8500c
IPN95R2K0P7ATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 950V 4A SOT223
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Rds On (Max) @ Id, Vgs: 2Ohm @ 1.7A, 10V
Power Dissipation (Max): 7W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 80µA
Supplier Device Package: PG-SOT223
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 950 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 330 pF @ 400 V
auf Bestellung 22455 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
10+1.92 EUR
14+1.30 EUR
100+0.94 EUR
500+0.77 EUR
1000+0.67 EUR
Mindestbestellmenge: 10
Im Einkaufswagen  Stück im Wert von  UAH
EVALM3102TTOBO1 Infineon-EVAL-M3-102T_User_Manual-AN-v01_01-EN.pdf?fileId=5546d462625a528f01629491cef239b7
EVALM3102TTOBO1
Hersteller: Infineon Technologies
Description: EVAL BOARD FOR IMC102
Packaging: Bulk
Function: Motor Controller/Driver
Type: Power Management
Contents: Board(s)
Utilized IC / Part: IMC102
Supplied Contents: Board(s)
Part Status: Obsolete
Produkt ist nicht verfügbar
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IPB65R045C7ATMA2 Infineon-IPB65R045C7-DS-v02_01-en.pdf?fileId=db3a30433e78ea82013e790478550043
IPB65R045C7ATMA2
Hersteller: Infineon Technologies
Description: MOSFET N-CH 650V 46A TO263-3
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 46A (Tc)
Rds On (Max) @ Id, Vgs: 45mOhm @ 24.9A, 10V
Power Dissipation (Max): 227W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1.25mA
Supplier Device Package: PG-TO263-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 93 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4340 pF @ 400 V
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1000+8.36 EUR
Mindestbestellmenge: 1000
Im Einkaufswagen  Stück im Wert von  UAH
IPB65R065C7ATMA2 Infineon-IPB65R065C7-DS-v02_00-en.pdf?fileId=db3a304341e0aed001420483e2ab1788
IPB65R065C7ATMA2
Hersteller: Infineon Technologies
Description: MOSFET N-CH 650V 33A TO263-3
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 33A (Tc)
Rds On (Max) @ Id, Vgs: 65mOhm @ 17.1A, 10V
Power Dissipation (Max): 171W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 200µA
Supplier Device Package: PG-TO263-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3020 pF @ 400 V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1000+5.60 EUR
Mindestbestellmenge: 1000
Im Einkaufswagen  Stück im Wert von  UAH
IPB65R095C7ATMA2 Infineon-IPB65R095C7-DS-v02_00-en.pdf?fileId=db3a30434208e5fd0142092311ad00e6
IPB65R095C7ATMA2
Hersteller: Infineon Technologies
Description: MOSFET N-CH 650V 24A TO263-3
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 95mOhm @ 11.8A, 10V
Power Dissipation (Max): 128W (Tc)
Vgs(th) (Max) @ Id: 4V @ 590µA
Supplier Device Package: PG-TO263-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2140 pF @ 400 V
auf Bestellung 2000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1000+3.98 EUR
Mindestbestellmenge: 1000
Im Einkaufswagen  Stück im Wert von  UAH
IPB65R125C7ATMA2 Infineon-IPB65R125C7-DS-v02_00-en.pdf?fileId=db3a30434208e5fd0142094d378001a5
IPB65R125C7ATMA2
Hersteller: Infineon Technologies
Description: MOSFET N-CH 650V 18A TO263-3
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 125mOhm @ 8.9A, 10V
Power Dissipation (Max): 101W (Tc)
Vgs(th) (Max) @ Id: 4V @ 440µA
Supplier Device Package: PG-TO263-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1670 pF @ 400 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPB65R190C7ATMA2 Infineon-IPB65R190C7-DS-v02_01-en.pdf?fileId=db3a30434208e5fd0142095ff92801d1
IPB65R190C7ATMA2
Hersteller: Infineon Technologies
Description: MOSFET N-CH 650V 13A TO263-3
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 5.7A, 10V
Power Dissipation (Max): 72W (Tc)
Vgs(th) (Max) @ Id: 4V @ 290µA
Supplier Device Package: PG-TO263-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1150 pF @ 400 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPB65R225C7ATMA2 Infineon-IPB65R225C7-DS-v02_00-en.pdf?fileId=db3a30433e78ea82013e7921c0d800bc
IPB65R225C7ATMA2
Hersteller: Infineon Technologies
Description: MOSFET N-CH 650V 11A TO263-3
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 225mOhm @ 4.8A, 10V
Power Dissipation (Max): 63W (Tc)
Vgs(th) (Max) @ Id: 4V @ 240µA
Supplier Device Package: PG-TO263-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 996 pF @ 400 V
Produkt ist nicht verfügbar
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IPB65R045C7ATMA2 Infineon-IPB65R045C7-DS-v02_01-en.pdf?fileId=db3a30433e78ea82013e790478550043
IPB65R045C7ATMA2
Hersteller: Infineon Technologies
Description: MOSFET N-CH 650V 46A TO263-3
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 46A (Tc)
Rds On (Max) @ Id, Vgs: 45mOhm @ 24.9A, 10V
Power Dissipation (Max): 227W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1.25mA
Supplier Device Package: PG-TO263-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 93 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4340 pF @ 400 V
auf Bestellung 1648 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+16.88 EUR
10+11.84 EUR
100+8.83 EUR
500+8.36 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
IPB65R065C7ATMA2 Infineon-IPB65R065C7-DS-v02_00-en.pdf?fileId=db3a304341e0aed001420483e2ab1788
IPB65R065C7ATMA2
Hersteller: Infineon Technologies
Description: MOSFET N-CH 650V 33A TO263-3
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 33A (Tc)
Rds On (Max) @ Id, Vgs: 65mOhm @ 17.1A, 10V
Power Dissipation (Max): 171W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 200µA
Supplier Device Package: PG-TO263-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3020 pF @ 400 V
auf Bestellung 3386 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+11.04 EUR
10+7.84 EUR
100+6.35 EUR
500+5.60 EUR
Mindestbestellmenge: 2
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IPB65R095C7ATMA2 Infineon-IPB65R095C7-DS-v02_00-en.pdf?fileId=db3a30434208e5fd0142092311ad00e6
IPB65R095C7ATMA2
Hersteller: Infineon Technologies
Description: MOSFET N-CH 650V 24A TO263-3
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 95mOhm @ 11.8A, 10V
Power Dissipation (Max): 128W (Tc)
Vgs(th) (Max) @ Id: 4V @ 590µA
Supplier Device Package: PG-TO263-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2140 pF @ 400 V
auf Bestellung 2412 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+9.66 EUR
10+6.48 EUR
100+4.66 EUR
500+3.89 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
IPB65R190C7ATMA2 Infineon-IPB65R190C7-DS-v02_01-en.pdf?fileId=db3a30434208e5fd0142095ff92801d1
IPB65R190C7ATMA2
Hersteller: Infineon Technologies
Description: MOSFET N-CH 650V 13A TO263-3
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 5.7A, 10V
Power Dissipation (Max): 72W (Tc)
Vgs(th) (Max) @ Id: 4V @ 290µA
Supplier Device Package: PG-TO263-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1150 pF @ 400 V
auf Bestellung 363 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+4.73 EUR
10+3.25 EUR
100+2.56 EUR
Mindestbestellmenge: 4
Im Einkaufswagen  Stück im Wert von  UAH
CG7497AAT
Hersteller: Infineon Technologies
Description: IC MCU CAPSENSE
Packaging: Tape & Reel (TR)
Part Status: Obsolete
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MB90F394HPMT-GS-N2E1
MB90F394HPMT-GS-N2E1
Hersteller: Infineon Technologies
Description: IC MCU 16BIT 384KB FLASH 120LQFP
Packaging: Bulk
Package / Case: 120-LQFP
Mounting Type: Surface Mount
Speed: 24MHz
Program Memory Size: 384KB (384K x 8)
RAM Size: 10K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
Core Processor: F²MC-16LX
Data Converters: A/D 15x8/10b
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 3.5V ~ 5.5V
Connectivity: CANbus, LINbus, SCI, Serial I/O, UART/USART
Peripherals: POR, PWM, WDT
Supplier Device Package: 120-LQFP (16x16)
Number of I/O: 96
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MB91195ABGL-G-258-K8ERE1
Hersteller: Infineon Technologies
Description: IC MICROCONTROLLER
Packaging: Bulk
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
V29F010B-120PC
Hersteller: Infineon Technologies
Description: IC MEMORY NOR
Packaging: Bulk
Part Status: Obsolete
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
V29F400BT-150SC
Hersteller: Infineon Technologies
Description: IC MEMORY NOR
Packaging: Bulk
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
CG7497AA
Hersteller: Infineon Technologies
Description: IC MCU CAPSENSE
Packaging: Tray
Part Status: Obsolete
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TDA21232AUMA1
Hersteller: Infineon Technologies
Description: IC MOSFET DRIVER 40PIQFN
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
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