Produkte > INFINEON TECHNOLOGIES > Alle Produkte des Herstellers INFINEON TECHNOLOGIES (148900) > Seite 317 nach 2482

Wählen Sie Seite:   [  << Vorherige Seite ]  1 248 312 313 314 315 316 317 318 319 320 321 322 496 744 992 1240 1488 1736 1984 2232 2480 2482  [ Nächste Seite >> ]
Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis
BTS70041EPPXUMA1 BTS70041EPPXUMA1 Infineon Technologies Infineon-BTS7004-1EPP-DS-v01_00-EN.pdf?fileId=5546d4626102d35a016147550a725555 Description: IC PWR SWTCH N-CHAN 1:1 TSDSO-14
Packaging: Cut Tape (CT)
Package / Case: 14-TSSOP (0.154", 3.90mm Width) Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 4.4mOhm
Voltage - Load: 6V ~ 18V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 15A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-TSDSO-14-22
Fault Protection: Over Current, Over/Under Voltage
Part Status: Active
Grade: Automotive
Qualification: AEC-Q100
auf Bestellung 113 Stücke:
Lieferzeit 10-14 Tag (e)
5+3.63 EUR
10+2.68 EUR
25+2.45 EUR
100+2.19 EUR
Mindestbestellmenge: 5
Im Einkaufswagen  Stück im Wert von  UAH
BTS70802EPAXUMA1 BTS70802EPAXUMA1 Infineon Technologies Infineon-BTS7080-2EPA-DS-v01_00-EN.pdf?fileId=5546d4625e763904015e941bf21e2dbe Description: IC PWR SWTCH N-CHAN 1:1 TSDSO-14
Packaging: Cut Tape (CT)
Features: Slew Rate Controlled
Package / Case: 14-TSSOP (0.154", 3.90mm Width) Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 2
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 23.1mOhm
Input Type: Non-Inverting
Voltage - Load: 6V ~ 18V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 3A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-TSDSO-14-22
Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, Over Voltage, UVLO
Part Status: Active
Grade: Automotive
Qualification: AEC-Q100
auf Bestellung 5085 Stücke:
Lieferzeit 10-14 Tag (e)
8+2.31 EUR
11+1.68 EUR
25+1.52 EUR
100+1.35 EUR
250+1.27 EUR
500+1.22 EUR
1000+1.18 EUR
Mindestbestellmenge: 8
Im Einkaufswagen  Stück im Wert von  UAH
1ED020I12FAXUMA2 1ED020I12FAXUMA2 Infineon Technologies 1ED020I12FA_Rev3.0_05-21-13.pdf Description: DGTL ISO 4.5KV 1CH GT DVR DSO20
Packaging: Tape & Reel (TR)
Package / Case: 20-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Magnetic Coupling
Current - Output High, Low: 2A, 2A
Voltage - Isolation: 4500Vrms
Supplier Device Package: PG-DSO-20
Rise / Fall Time (Typ): 30ns, 50ns
Part Status: Obsolete
Number of Channels: 1
Voltage - Output Supply: 13V ~ 20V
Grade: Automotive
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BGS12PN10E6327XTSA1 BGS12PN10E6327XTSA1 Infineon Technologies Infineon-BGS12PN10-DS-v01_00-EN.pdf?fileId=5546d46256fb43b30157565d296541b1 Description: IC RF SWITCH SPDT 6GHZ TSNP10-1
Packaging: Cut Tape (CT)
Package / Case: 10-XFQFN
Impedance: 50Ohm
Mounting Type: Surface Mount
Circuit: SPDT
Operating Temperature: -30°C ~ 85°C
Voltage - Supply: 1.8V ~ 3.6V
Insertion Loss: 0.6dB
Frequency Range: 500MHz ~ 6GHz
Test Frequency: 6GHz
Isolation: 20dB
Supplier Device Package: PG-TSNP-10-1
Part Status: Active
auf Bestellung 2946 Stücke:
Lieferzeit 10-14 Tag (e)
20+0.92 EUR
28+0.65 EUR
31+0.58 EUR
100+0.50 EUR
250+0.47 EUR
500+0.45 EUR
1000+0.44 EUR
Mindestbestellmenge: 20
Im Einkaufswagen  Stück im Wert von  UAH
IPN50R3K0CEATMA1 IPN50R3K0CEATMA1 Infineon Technologies Infineon-IPN50R3K0CE-DS-v02_01-EN.pdf?fileId=5546d46253f6505701547adae0c05ad5 Description: MOSFET N-CH 500V 2.6A SOT223
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.6A (Tc)
Rds On (Max) @ Id, Vgs: 3Ohm @ 400mA, 13V
Power Dissipation (Max): 5W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 30µA
Supplier Device Package: PG-SOT223-3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 13V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 4.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 84 pF @ 100 V
auf Bestellung 3541 Stücke:
Lieferzeit 10-14 Tag (e)
18+1.00 EUR
29+0.63 EUR
100+0.40 EUR
500+0.30 EUR
1000+0.27 EUR
Mindestbestellmenge: 18
Im Einkaufswagen  Stück im Wert von  UAH
BGT24LTR11N16E6327XTSA1 BGT24LTR11N16E6327XTSA1 Infineon Technologies Infineon-BGT24LTR11N16-DS-v01_01-EN.pdf?fileId=5546d4625696ed7601569d2ae3a9158a Description: IC RF TXRX 16TSNP
Packaging: Cut Tape (CT)
Package / Case: 16-WFQFN Exposed Pad
Mounting Type: Surface Mount
Frequency: 24GHz ~ 24.25GHz
Type: TxRx Only
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3.3V
Power - Output: 6dBm
Current - Receiving: 45mA
Current - Transmitting: 45mA
Supplier Device Package: PG-TSNP-16-9
Part Status: Active
DigiKey Programmable: Not Verified
auf Bestellung 2142 Stücke:
Lieferzeit 10-14 Tag (e)
2+11.42 EUR
10+8.27 EUR
100+6.44 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
IPD60R400CEAUMA1 IPD60R400CEAUMA1 Infineon Technologies Infineon-IPD60R400CE-DS-v02_02-EN.pdf?fileId=5546d46249be182c0149c83667001f0c Description: MOSFET N-CH 600V 14.7A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14.7A (Tc)
Rds On (Max) @ Id, Vgs: 400mOhm @ 3.8A, 10V
Power Dissipation (Max): 112W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 300µA
Supplier Device Package: PG-TO252-2
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 100 V
auf Bestellung 7223 Stücke:
Lieferzeit 10-14 Tag (e)
7+2.69 EUR
10+1.76 EUR
100+1.20 EUR
500+1.00 EUR
1000+0.91 EUR
Mindestbestellmenge: 7
Im Einkaufswagen  Stück im Wert von  UAH
IPN50R1K4CEATMA1 IPN50R1K4CEATMA1 Infineon Technologies Infineon-IPN50R1K4CE-DS-v02_01-EN.pdf?fileId=5546d46253f6505701547ac894e25aa7 Description: MOSFET N-CH 500V 4.8A SOT223
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.8A (Tc)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 900mA, 13V
Power Dissipation (Max): 5W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 70µA
Supplier Device Package: PG-SOT223-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 13V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 8.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 178 pF @ 100 V
auf Bestellung 10794 Stücke:
Lieferzeit 10-14 Tag (e)
19+0.93 EUR
26+0.70 EUR
100+0.52 EUR
500+0.39 EUR
1000+0.33 EUR
Mindestbestellmenge: 19
Im Einkaufswagen  Stück im Wert von  UAH
IPN50R2K0CEATMA1 IPN50R2K0CEATMA1 Infineon Technologies Infineon-IPN50R2K0CE-DS-v02_01-EN.pdf?fileId=5546d46253f6505701547ac89b1f5aaa Description: MOSFET N-CH 500V 3.6A SOT223
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.6A (Tc)
Rds On (Max) @ Id, Vgs: 2Ohm @ 600mA, 13V
Power Dissipation (Max): 5W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 50µA
Supplier Device Package: PG-SOT223-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 13V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 124 pF @ 100 V
auf Bestellung 10343 Stücke:
Lieferzeit 10-14 Tag (e)
21+0.86 EUR
32+0.56 EUR
100+0.39 EUR
500+0.32 EUR
1000+0.29 EUR
Mindestbestellmenge: 21
Im Einkaufswagen  Stück im Wert von  UAH
IPG20N10S4L35ATMA1 IPG20N10S4L35ATMA1 Infineon Technologies Infineon-IPG20N10S4L_35-DS-v01_01-en.pdf?fileId=db3a3043372d5cc8013750d7337e05fd Description: MOSFET 2N-CH 100V 20A 8TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 43W
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 20A
Input Capacitance (Ciss) (Max) @ Vds: 1105pF @ 25V
Rds On (Max) @ Id, Vgs: 35mOhm @ 17A, 10V
Gate Charge (Qg) (Max) @ Vgs: 17.4nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.1V @ 16µA
Supplier Device Package: PG-TDSON-8-4
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 34558 Stücke:
Lieferzeit 10-14 Tag (e)
6+3.01 EUR
10+1.91 EUR
100+1.29 EUR
500+1.02 EUR
1000+0.95 EUR
Mindestbestellmenge: 6
Im Einkaufswagen  Stück im Wert von  UAH
AUIRF8739L2TR AUIRF8739L2TR Infineon Technologies auirf8739l2.pdf?fileId=5546d462533600a4015355b0e3241416 Description: MOSFET N-CH 40V 57A DIRECTFET
Packaging: Cut Tape (CT)
Package / Case: DirectFET™ Isometric L8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 57A (Ta), 545A (Tc)
Rds On (Max) @ Id, Vgs: 0.6mOhm @ 195A, 10V
Power Dissipation (Max): 3.8W (Ta), 340W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 250µA
Supplier Device Package: DirectFET™ Isometric L8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): 40V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 562 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 17890 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPG20N06S4L26AATMA1 IPG20N06S4L26AATMA1 Infineon Technologies Infineon-IPG20N06S4L_26A-DS-v01_00-en.pdf?fileId=db3a30433d346a2d013d454e0c275177 Description: MOSFET 2N-CH 60V 20A 8TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount, Wettable Flank
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 33W
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 20A
Input Capacitance (Ciss) (Max) @ Vds: 1430pF @ 25V
Rds On (Max) @ Id, Vgs: 26mOhm @ 17A, 10V
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.2V @ 10µA
Supplier Device Package: PG-TDSON-8-10
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 4648 Stücke:
Lieferzeit 10-14 Tag (e)
7+2.60 EUR
11+1.65 EUR
100+1.10 EUR
500+0.87 EUR
1000+0.78 EUR
Mindestbestellmenge: 7
Im Einkaufswagen  Stück im Wert von  UAH
AUIPS6031RTRL AUIPS6031RTRL Infineon Technologies auips6031.pdf?fileId=5546d462533600a4015355a797f51311 Description: IC PWR SWITCH N-CHANNEL 1:1 DPAK
Packaging: Cut Tape (CT)
Features: Auto Restart
Package / Case: TO-252-5, DPak (4 Leads + Tab), TO-252AD
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 46mOhm
Input Type: Non-Inverting
Voltage - Load: 36V (Max)
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 2.8A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-TO252-5
Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature
Part Status: Obsolete
Grade: Automotive
Qualification: AEC-Q100
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPD90N10S4L06ATMA1 IPD90N10S4L06ATMA1 Infineon Technologies Infineon-IPD90N10S4L_06-DS-v01_00-en.pdf?fileId=db3a3043372d5cc80137500063630512 Description: MOSFET N-CH 100V 90A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 6.6mOhm @ 90A, 10V
Power Dissipation (Max): 136W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 90µA
Supplier Device Package: PG-TO252-3-313
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 98 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6250 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 4074 Stücke:
Lieferzeit 10-14 Tag (e)
5+4.28 EUR
10+2.96 EUR
100+2.04 EUR
500+1.65 EUR
1000+1.52 EUR
Mindestbestellmenge: 5
Im Einkaufswagen  Stück im Wert von  UAH
1EBN1001AEXUMA1 1EBN1001AEXUMA1 Infineon Technologies Infineon-1EBN1001AE-DS-v03_00-EN.pdf?fileId=5546d462503812bb01505fa4d89805a0 Description: IC GATE DRVR HI/LOW SIDE 14SOIC
Packaging: Cut Tape (CT)
Package / Case: 14-SOIC (0.154", 3.90mm Width) Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 13V ~ 18V
High Side Voltage - Max (Bootstrap): 1200 V
Supplier Device Package: PG-DSO-14-43
Rise / Fall Time (Typ): 50ns, 90ns
Channel Type: Single
Driven Configuration: High-Side or Low-Side
Number of Drivers: 1
Gate Type: IGBT, MOSFET (N-Channel, P-Channel)
Logic Voltage - VIL, VIH: 1.5V, 3.5V
Part Status: Active
DigiKey Programmable: Not Verified
Grade: Automotive
Qualification: AEC-Q100
auf Bestellung 4540 Stücke:
Lieferzeit 10-14 Tag (e)
4+5.23 EUR
10+3.94 EUR
25+3.61 EUR
100+3.25 EUR
250+3.08 EUR
500+2.98 EUR
1000+2.90 EUR
Mindestbestellmenge: 4
Im Einkaufswagen  Stück im Wert von  UAH
AUIRF5210STRL AUIRF5210STRL Infineon Technologies auirf5210s.pdf?fileId=5546d462533600a4015355acd8ce13c3 Description: MOSFET P-CH 100V 38A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 38A (Tc)
Rds On (Max) @ Id, Vgs: 60mOhm @ 38A, 10V
Power Dissipation (Max): 3.1W (Ta), 170W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 230 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2780 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPD65R400CEAUMA1 IPD65R400CEAUMA1 Infineon Technologies Infineon-IPD65R400CE-DS-v02_00-EN.pdf?fileId=5546d462533600a401539eb64cd44f67 Description: MOSFET N-CH 650V 15.1A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15.1A (Tc)
Rds On (Max) @ Id, Vgs: 400mOhm @ 3.2A, 10V
Power Dissipation (Max): 118W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 320µA
Supplier Device Package: PG-TO252-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 710 pF @ 100 V
auf Bestellung 50954 Stücke:
Lieferzeit 10-14 Tag (e)
11+1.72 EUR
15+1.19 EUR
100+0.87 EUR
500+0.75 EUR
1000+0.69 EUR
Mindestbestellmenge: 11
Im Einkaufswagen  Stück im Wert von  UAH
BTS3046SDLATMA1 BTS3046SDLATMA1 Infineon Technologies Infineon-BTS3046SDL-DS-v01_00-EN.pdf?fileId=5546d4625a888733015aad821c9e4c21 Description: IC PWR SWITCH N-CHAN 1:1 TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Low Side
Rds On (Typ): 46mOhm
Input Type: Non-Inverting
Voltage - Load: 60V (Max)
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 3.6A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-TO252-3-11
Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage
Part Status: Active
auf Bestellung 18716 Stücke:
Lieferzeit 10-14 Tag (e)
6+3.29 EUR
10+2.43 EUR
25+2.21 EUR
100+1.98 EUR
250+1.86 EUR
500+1.79 EUR
1000+1.74 EUR
Mindestbestellmenge: 6
Im Einkaufswagen  Stück im Wert von  UAH
AUIPS7081STRL AUIPS7081STRL Infineon Technologies auips7081.pdf?fileId=5546d462533600a4015355a7b8d5131e Description: IC PWR SWITCH N-CHAN 1:1 D2PAK-5
Packaging: Cut Tape (CT)
Features: Auto Restart
Package / Case: TO-263-5, D2PAK (4 Leads + Tab), TO-263BB
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 55mOhm
Input Type: Non-Inverting
Voltage - Load: 6V ~ 35V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 2A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-TO263-5
Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature
Part Status: Obsolete
Grade: Automotive
Qualification: AEC-Q100
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BSC0504NSIATMA1 BSC0504NSIATMA1 Infineon Technologies Infineon-BSC0504NSI-DS-v02_00-EN.pdf?fileId=5546d4624eeb2bc7014f0286ff3c3d3d Description: MOSFET N-CH 30V 21A/72A TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 72A (Tc)
Rds On (Max) @ Id, Vgs: 3.7mOhm @ 30A, 10V
Power Dissipation (Max): 2.5W (Ta), 30W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TDSON-8-6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 960 pF @ 15 V
auf Bestellung 7451 Stücke:
Lieferzeit 10-14 Tag (e)
19+0.97 EUR
25+0.70 EUR
100+0.57 EUR
500+0.55 EUR
Mindestbestellmenge: 19
Im Einkaufswagen  Stück im Wert von  UAH
1ED020I12FTAXUMA2 1ED020I12FTAXUMA2 Infineon Technologies Infineon-1ED020I12FTA-DS-v02_01-en.pdf?fileId=db3a30432e779412012e7b85bdb73874 Description: DGT ISO 4.5KV 1CH GT DVR DSO20
Packaging: Cut Tape (CT)
Package / Case: 20-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Magnetic Coupling
Current - Output High, Low: 2A, 2A
Voltage - Isolation: 4500Vrms
Supplier Device Package: PG-DSO-20-55
Rise / Fall Time (Typ): 30ns, 20ns
Part Status: Not For New Designs
Number of Channels: 1
Voltage - Output Supply: 4.5V ~ 5.5V
auf Bestellung 2677 Stücke:
Lieferzeit 10-14 Tag (e)
2+11.69 EUR
10+9.04 EUR
25+8.37 EUR
100+7.64 EUR
250+7.29 EUR
500+7.08 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
TLE73683EXUMA2 TLE73683EXUMA2 Infineon Technologies Infineon-TLE7368-DS-v02_21-EN.pdf?fileId=5546d46258fc0bc1015969d271b041d1 Description: IC REG AUTO APPL 3OUT DSO-36
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPB65R190C7ATMA1 IPB65R190C7ATMA1 Infineon Technologies Infineon-IPB65R190C7-DS-v02_01-en.pdf?fileId=db3a30434208e5fd0142095ff92801d1 Description: MOSFET N-CH 650V 13A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 5.7A, 10V
Power Dissipation (Max): 72W (Tc)
Vgs(th) (Max) @ Id: 4V @ 290µA
Supplier Device Package: PG-TO263-3
Part Status: Discontinued at Digi-Key
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1150 pF @ 400 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPB65R110CFDAATMA1 IPB65R110CFDAATMA1 Infineon Technologies Infineon-IPX65R110CFDA-DS-v02_00-en.pdf?fileId=db3a304336797ff90136ba7c820925a5 Description: MOSFET N-CH 650V 31.2A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 31.2A (Tc)
Rds On (Max) @ Id, Vgs: 110mOhm @ 12.7A, 10V
Power Dissipation (Max): 277.8W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1.3mA
Supplier Device Package: PG-TO263-3
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 118 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3240 pF @ 100 V
Qualification: AEC-Q101
auf Bestellung 1809 Stücke:
Lieferzeit 10-14 Tag (e)
3+8.71 EUR
10+6.71 EUR
100+4.99 EUR
500+4.88 EUR
Mindestbestellmenge: 3
Im Einkaufswagen  Stück im Wert von  UAH
IPB180N08S402ATMA1 IPB180N08S402ATMA1 Infineon Technologies IPB180N08S4-02-Data-Sheet-10-Infineon.pdf?fileId=5546d4614755559a01475d701b54019c Description: MOSFET N-CH 80V 180A TO263-7
Packaging: Cut Tape (CT)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
Rds On (Max) @ Id, Vgs: 2.2mOhm @ 100A, 10V
Power Dissipation (Max): 277W (Tc)
Vgs(th) (Max) @ Id: 4V @ 220µA
Supplier Device Package: PG-TO263-7-3
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 167 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11550 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 35 Stücke:
Lieferzeit 10-14 Tag (e)
2+10.01 EUR
10+6.74 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
BSL308PEH6327XTSA1 BSL308PEH6327XTSA1 Infineon Technologies Infineon-BSL308PE-DS-v02_03-en.pdf?fileId=db3a30431d8a6b3c011d8ff3592c03d0 Description: MOSFET 2P-CH 30V 2A TSOP6-6
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 500mW
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 2A
Input Capacitance (Ciss) (Max) @ Vds: 500pF @ 15V
Rds On (Max) @ Id, Vgs: 80mOhm @ 2A, 10V
Gate Charge (Qg) (Max) @ Vgs: 5nC @ 10V
FET Feature: Logic Level Gate, 4.5V Drive
Vgs(th) (Max) @ Id: 1V @ 11µA
Supplier Device Package: PG-TSOP6-6
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
auf Bestellung 10633 Stücke:
Lieferzeit 10-14 Tag (e)
18+0.99 EUR
29+0.61 EUR
100+0.51 EUR
500+0.43 EUR
1000+0.39 EUR
Mindestbestellmenge: 18
Im Einkaufswagen  Stück im Wert von  UAH
BSS138WH6433XTMA1 BSS138WH6433XTMA1 Infineon Technologies Infineon-BSS138W-DS-v02_43-en.pdf?fileId=db3a304335113a6301351e62fcb4131f Description: MOSFET N-CH 60V 280MA SOT323-3
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 280mA (Ta)
Rds On (Max) @ Id, Vgs: 3.5Ohm @ 200mA, 10V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 1.4V @ 26µA
Supplier Device Package: PG-SOT323
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 1.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 43 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 42576 Stücke:
Lieferzeit 10-14 Tag (e)
53+0.33 EUR
83+0.21 EUR
135+0.13 EUR
1000+0.11 EUR
2000+0.10 EUR
5000+0.09 EUR
Mindestbestellmenge: 53
Im Einkaufswagen  Stück im Wert von  UAH
BSP125H6433XTMA1 BSP125H6433XTMA1 Infineon Technologies Infineon-BSP125-DS-v02_02-en.pdf?fileId=db3a30433b47825b013b50cae9702806 Description: MOSFET N-CH 600V 120MA SOT223-4
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120mA (Ta)
Power Dissipation (Max): 1.8W (Ta)
Vgs(th) (Max) @ Id: 2.3V @ 94µA
Supplier Device Package: PG-SOT223-4
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 6.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 150 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 5349 Stücke:
Lieferzeit 10-14 Tag (e)
22+0.83 EUR
27+0.67 EUR
100+0.54 EUR
1000+0.49 EUR
2000+0.45 EUR
Mindestbestellmenge: 22
Im Einkaufswagen  Stück im Wert von  UAH
BSP129H6906XTSA1 BSP129H6906XTSA1 Infineon Technologies Infineon-BSP129-DS-v01_42-en.pdf?fileId=db3a30433c1a8752013c1fc296d2395f Description: MOSFET N-CH 240V 350MA SOT223-4
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel, Depletion Mode
Current - Continuous Drain (Id) @ 25°C: 350mA (Ta)
Rds On (Max) @ Id, Vgs: 6Ohm @ 350mA, 10V
Power Dissipation (Max): 1.8W (Ta)
Vgs(th) (Max) @ Id: 1V @ 108µA
Supplier Device Package: PG-SOT223-4
Part Status: Last Time Buy
Drive Voltage (Max Rds On, Min Rds On): 0V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 240 V
Gate Charge (Qg) (Max) @ Vgs: 5.7 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 108 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BSP716NH6327XTSA1 BSP716NH6327XTSA1 Infineon Technologies Infineon-BSP716N-DS-v02_00-en.pdf?fileId=db3a304341c1e4a10141da580f3529e9 Description: MOSFET N-CH 75V 2.3A SOT223-4
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.3A (Ta)
Rds On (Max) @ Id, Vgs: 160mOhm @ 2.3A, 10V
Power Dissipation (Max): 1.8W (Ta)
Vgs(th) (Max) @ Id: 1.8V @ 218µA
Supplier Device Package: PG-SOT223-4
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 13.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 315 pF @ 25 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TLE9871QXA20XUMA2 TLE9871QXA20XUMA2 Infineon Technologies Infineon-TLE9871QXA20-DS-v01_00-EN.pdf?fileId=5546d4625a888733015a89e33fad3f30 Description: IC SOC MOTOR DRIVER 48VQFN
auf Bestellung 130 Stücke:
Lieferzeit 10-14 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
TLE9877QXA20XUMA2 TLE9877QXA20XUMA2 Infineon Technologies Infineon-TLE9877QXA20-DS-v01_00-EN.pdf?fileId=5546d4625a888733015a89d127563f28 Description: IC SOC MOTOR DRIVER 48VQFN
Packaging: Cut Tape (CT)
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: LIN, SSI, UART
RAM Size: 6K x 8
Operating Temperature: -40°C ~ 150°C
Voltage - Supply: 5.5V ~ 28V
Program Memory Type: FLASH (64kB)
Applications: Automotive
Core Processor: ARM® Cortex®-M3
Supplier Device Package: PG-VQFN-48-31
Part Status: Not For New Designs
Number of I/O: 10
auf Bestellung 225 Stücke:
Lieferzeit 10-14 Tag (e)
3+6.02 EUR
Mindestbestellmenge: 3
Im Einkaufswagen  Stück im Wert von  UAH
TLE9877QXA40XUMA2 TLE9877QXA40XUMA2 Infineon Technologies Infineon-TLE987x-ProductBrief-PB-v01_00-EN.pdf?fileId=5546d46249a28d750149aee472032794 Description: IC SOC MOTOR DRIVER 48VQFN
Packaging: Cut Tape (CT)
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: LIN, SSI, UART
RAM Size: 6K x 8
Operating Temperature: -40°C ~ 150°C
Voltage - Supply: 5.5V ~ 28V
Program Memory Type: FLASH (64kB)
Core Processor: ARM® Cortex®-M3
Supplier Device Package: PG-VQFN-48-31
Part Status: Active
Number of I/O: 10
DigiKey Programmable: Not Verified
Grade: Automotive
Qualification: AEC-Q100
auf Bestellung 8232 Stücke:
Lieferzeit 10-14 Tag (e)
2+9.80 EUR
10+7.50 EUR
25+6.93 EUR
100+6.30 EUR
250+6.00 EUR
500+5.82 EUR
1000+5.67 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
TLE9877QXW40XUMA1 TLE9877QXW40XUMA1 Infineon Technologies Infineon-TLE987x-ProductBrief-PB-v01_00-EN.pdf?fileId=5546d46249a28d750149aee472032794 Description: IC SOC MOTOR DRIVER 48VQFN
Packaging: Cut Tape (CT)
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: LIN, SSI, UART
RAM Size: 6K x 8
Operating Temperature: -40°C ~ 175°C
Voltage - Supply: 5.5V ~ 28V
Program Memory Type: FLASH (64kB)
Core Processor: ARM® Cortex®-M3
Supplier Device Package: PG-VQFN-48-29
Part Status: Active
Number of I/O: 10
DigiKey Programmable: Not Verified
Grade: Automotive
Qualification: AEC-Q100
auf Bestellung 4824 Stücke:
Lieferzeit 10-14 Tag (e)
2+10.72 EUR
10+8.23 EUR
25+7.61 EUR
100+6.93 EUR
250+6.60 EUR
500+6.41 EUR
1000+6.25 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
TLE9879QXA20XUMA2 TLE9879QXA20XUMA2 Infineon Technologies Infineon-TLE9879QXA20-DS-v01_00-EN.pdf?fileId=5546d46259d9a4bf015a8473ba2274de Description: IC SOC MOTOR DRIVER 48VQFN
Packaging: Cut Tape (CT)
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: LIN, SSI, UART
RAM Size: 6K x 8
Operating Temperature: -40°C ~ 150°C
Voltage - Supply: 5.5V ~ 28V
Program Memory Type: FLASH (128kB)
Applications: Automotive
Core Processor: ARM® Cortex®-M3
Supplier Device Package: PG-VQFN-48-31
Number of I/O: 10
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TLE9879QXW40XUMA1 TLE9879QXW40XUMA1 Infineon Technologies Infineon-TLE987x-ProductBrief-PB-v01_00-EN.pdf?fileId=5546d46249a28d750149aee472032794 Description: IC SOC MOTOR DRIVER 48VQFN
Packaging: Cut Tape (CT)
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: LIN, SSI, UART
RAM Size: 6K x 8
Operating Temperature: -40°C ~ 175°C
Voltage - Supply: 5.5V ~ 28V
Program Memory Type: FLASH (128kB)
Core Processor: ARM® Cortex®-M3
Supplier Device Package: PG-VQFN-48-29
Number of I/O: 10
DigiKey Programmable: Not Verified
Grade: Automotive
Qualification: AEC-Q100
auf Bestellung 2425 Stücke:
Lieferzeit 10-14 Tag (e)
2+11.30 EUR
10+8.70 EUR
25+8.05 EUR
100+7.34 EUR
250+7.00 EUR
500+6.79 EUR
1000+6.62 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
TLE9867QXA40XUMA2 TLE9867QXA40XUMA2 Infineon Technologies Infineon-TLE9867QXA40-DS-v01_00-EN.pdf?fileId=5546d4625a888733015a8a3f72423f48 Description: IC SOC MOTOR DRIVER 48VQFN
auf Bestellung 2470 Stücke:
Lieferzeit 10-14 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
TLE9867QXW20XUMA1 TLE9867QXW20XUMA1 Infineon Technologies Infineon-TLE9867QXW20-DS-v01_00-EN.pdf?fileId=5546d4625b10283a015b2486a2e22e42 Description: IC SOC MOTOR DRIVER 48VQFN
Packaging: Cut Tape (CT)
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: LIN, SSI, UART
RAM Size: 6K x 8
Operating Temperature: -40°C ~ 175°C
Voltage - Supply: 5.5V ~ 28V
Program Memory Type: FLASH (128kB)
Core Processor: ARM® Cortex®-M3
Supplier Device Package: PG-VQFN-48-29
Grade: Automotive
Number of I/O: 10
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
auf Bestellung 4096 Stücke:
Lieferzeit 10-14 Tag (e)
4+5.70 EUR
10+5.68 EUR
Mindestbestellmenge: 4
Im Einkaufswagen  Stück im Wert von  UAH
TLE9869QXA20XUMA2 TLE9869QXA20XUMA2 Infineon Technologies Infineon-TLE9869QXA20-DS-v01_00-EN.pdf?fileId=5546d4625a888733015a8a3614cd3f3c Description: IC SOC MOTOR DRIVER 48VQFN
Packaging: Cut Tape (CT)
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: LIN, SSI, UART
RAM Size: 6K x 8
Operating Temperature: -40°C ~ 150°C
Voltage - Supply: 5.5V ~ 28V
Program Memory Type: FLASH (128kB)
Core Processor: ARM® Cortex®-M3
Supplier Device Package: PG-VQFN-48-31
Number of I/O: 10
DigiKey Programmable: Not Verified
Grade: Automotive
Qualification: AEC-Q100
auf Bestellung 3714 Stücke:
Lieferzeit 10-14 Tag (e)
4+5.72 EUR
Mindestbestellmenge: 4
Im Einkaufswagen  Stück im Wert von  UAH
TLE98432QXXUMA1 TLE98432QXXUMA1 Infineon Technologies Infineon-TLE9843-2QX-DS-v01_00-EN.pdf?fileId=5546d4625a888733015a893e5eaf029b Description: EMBEDDED POWER
Packaging: Cut Tape (CT)
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: LIN, SSI, UART
RAM Size: 4K x 8
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 3V ~ 28V
Program Memory Type: FLASH (52kB)
Core Processor: ARM® Cortex®-M0
Supplier Device Package: PG-VQFN-48-31
Part Status: Active
Number of I/O: 10
DigiKey Programmable: Not Verified
Grade: Automotive
Qualification: AEC-Q100
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
3+7.41 EUR
10+5.62 EUR
25+5.18 EUR
100+4.68 EUR
250+4.45 EUR
500+4.31 EUR
1000+4.19 EUR
Mindestbestellmenge: 3
Im Einkaufswagen  Stück im Wert von  UAH
TLE98422QXXUMA1 TLE98422QXXUMA1 Infineon Technologies Infineon-TLE9842-2QX-DS-v01_00-EN.pdf?fileId=5546d46259d9a4bf015a84aabc5f7511 Description: EMBEDDED POWER
Packaging: Cut Tape (CT)
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: LIN, SSI, UART
RAM Size: 2K x 8
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 3V ~ 28V
Program Memory Type: FLASH (40kB)
Core Processor: ARM® Cortex®-M0
Supplier Device Package: PG-VQFN-48-31
Grade: Automotive
Number of I/O: 10
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
auf Bestellung 3811 Stücke:
Lieferzeit 10-14 Tag (e)
3+7.29 EUR
10+5.52 EUR
25+5.08 EUR
100+4.60 EUR
250+4.37 EUR
500+4.23 EUR
1000+4.11 EUR
Mindestbestellmenge: 3
Im Einkaufswagen  Stück im Wert von  UAH
TLE98442QXXUMA1 TLE98442QXXUMA1 Infineon Technologies Infineon-TLE9844-2QX-DS-v01_00-EN.pdf?fileId=5546d46259d9a4bf015a84a1d6e97509 Description: IC MOTOR DRIVER 48VQFN
Packaging: Cut Tape (CT)
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: LIN, SSI, UART
RAM Size: 4K x 8
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 3V ~ 28V
Program Memory Type: FLASH (64kB)
Core Processor: ARM® Cortex®-M0
Supplier Device Package: PG-VQFN-48-31
Part Status: Active
Number of I/O: 10
DigiKey Programmable: Not Verified
Grade: Automotive
Qualification: AEC-Q100
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
3+7.62 EUR
10+5.79 EUR
25+5.33 EUR
100+4.82 EUR
250+4.58 EUR
500+4.44 EUR
1000+4.32 EUR
Mindestbestellmenge: 3
Im Einkaufswagen  Stück im Wert von  UAH
TLE9867QXA40XUMA2 TLE9867QXA40XUMA2 Infineon Technologies Infineon-TLE9867QXA40-DS-v01_00-EN.pdf?fileId=5546d4625a888733015a8a3f72423f48 Description: IC SOC MOTOR DRIVER 48VQFN
auf Bestellung 2470 Stücke:
Lieferzeit 10-14 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
IRS20965STRPBF IRS20965STRPBF Infineon Technologies irs20965spbf.pdf?fileId=5546d462533600a4015356761d8b279b Description: IC AMP CLASS D MONO 16SOIC
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Output Type: 1-Channel (Mono)
Mounting Type: Surface Mount
Type: Class D
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 10V ~ 15V
Supplier Device Package: 16-SOIC
Part Status: Not For New Designs
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
2+12.69 EUR
10+9.82 EUR
25+9.10 EUR
100+8.31 EUR
250+7.94 EUR
500+7.71 EUR
1000+7.52 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
IRFHS9351TRPBF IRFHS9351TRPBF Infineon Technologies irfhs9351pbf.pdf?fileId=5546d462533600a401535623a8d41f63 Description: MOSFET 2P-CH 30V 2.3A PQFN
Packaging: Cut Tape (CT)
Package / Case: 6-PowerVDFN
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.4W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 2.3A
Input Capacitance (Ciss) (Max) @ Vds: 160pF @ 25V
Rds On (Max) @ Id, Vgs: 170mOhm @ 3.1A, 10V
Gate Charge (Qg) (Max) @ Vgs: 3.7nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.4V @ 10µA
Supplier Device Package: 6-PQFN Dual (2x2)
Part Status: Active
auf Bestellung 12698 Stücke:
Lieferzeit 10-14 Tag (e)
11+1.60 EUR
18+1.00 EUR
100+0.65 EUR
500+0.50 EUR
1000+0.43 EUR
2000+0.41 EUR
Mindestbestellmenge: 11
Im Einkaufswagen  Stück im Wert von  UAH
BTS3142DNT BTS3142DNT Infineon Technologies Description: IC PWR SWITCH N-CHAN 1:1 TO252-3
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BTS118DNT BTS118DNT Infineon Technologies Description: IC PWR SWITCH N-CHAN 1:1 TO252-3
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BTS142DNT BTS142DNT Infineon Technologies Description: IC PWR SWITCH N-CHAN 1:1 TO252-3
Packaging: Tape & Reel (TR)
Features: Auto Restart
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Low Side
Rds On (Typ): 23mOhm
Input Type: Non-Inverting
Voltage - Load: 42V (Max)
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 4.6A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-TO252-3-11
Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage
Part Status: Obsolete
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BTS3118DNT Infineon Technologies Description: IC PWR SWITCH N-CHAN 1:1 TO252-3
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BTS3134NXT BTS3134NXT Infineon Technologies Description: IC PWR SWTCH N-CHAN 1:1 SOT223-4
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Low Side
Rds On (Typ): 35mOhm
Input Type: Non-Inverting
Voltage - Load: 42V (Max)
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 3A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-SOT223-4
Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage
Part Status: Obsolete
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
KIT6W12VBIASICE3TOBO1 KIT6W12VBIASICE3TOBO1 Infineon Technologies Infineon-General_description_KIT_6W_12V_BIAS_ICE3-ATI-v01_01-EN.pdf?fileId=5546d4625debb399015e28e45b1b3dde Description: EVAL BOARD FOR ICE3RBR4765JZ
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPLU300N04S4R7XTMA2 IPLU300N04S4R7XTMA2 Infineon Technologies Description: MOSFET N-CH 40V 300A 8HSOF
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 300A (Tc)
Rds On (Max) @ Id, Vgs: 0.76mOhm @ 100A, 10V
Power Dissipation (Max): 429W (Tc)
Vgs(th) (Max) @ Id: 4V @ 230µA
Supplier Device Package: PG-HSOF-8-1
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 287 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 22945 pF @ 25 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 25
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IKB10N60TATMA1 IKB10N60TATMA1 Infineon Technologies IKB10N60T+Rev2_3G.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a304412b407950112b428742d3dfe Description: IGBT NPT FS 600V 20A TO263-3-2
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 115 ns
Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 10A
Supplier Device Package: PG-TO263-3-2
IGBT Type: NPT, Trench Field Stop
Td (on/off) @ 25°C: 12ns/215ns
Switching Energy: 430µJ
Test Condition: 400V, 10A, 23Ohm, 15V
Gate Charge: 62 nC
Part Status: Active
Current - Collector (Ic) (Max): 20 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 30 A
Power - Max: 110 W
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BSZ0589NSATMA1 BSZ0589NSATMA1 Infineon Technologies Infineon-BSZ0589NS-DS-v02_00-EN.pdf?fileId=5546d46258fc0bc101598da704fa60e0 Description: MOSFET N-CH 30V 17A TSDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Ta)
Rds On (Max) @ Id, Vgs: 4.4mOhm @ 8A, 10V
Power Dissipation (Max): 2.1W (Ta)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TSDSON-8-FL
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 950 pF @ 15 V
auf Bestellung 9792 Stücke:
Lieferzeit 10-14 Tag (e)
8+2.38 EUR
12+1.50 EUR
100+1.00 EUR
500+0.78 EUR
1000+0.71 EUR
2000+0.65 EUR
Mindestbestellmenge: 8
Im Einkaufswagen  Stück im Wert von  UAH
520966231136 Infineon Technologies Description: IC FLASH NOR
Packaging: Tray
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
811600-73670880 Infineon Technologies Description: IC FLASH NOR
Packaging: Tray
Part Status: Obsolete
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TLV493DA1B6MS2GOTOBO1 TLV493DA1B6MS2GOTOBO1 Infineon Technologies Infineon-3D%20Magnetic%20Sensor-PB-v03_00-EN.pdf?fileId=5546d46261d5e6820161e7571b2b3dd0 Description: EVAL BOARD FOR TLV493D
Packaging: Box
Interface: USB
Voltage - Supply: 5V, USB
Sensor Type: Magnetic, Linear, Rotary Position
Utilized IC / Part: TLV493D-A1B6
Supplied Contents: Board(s)
Embedded: Yes, MCU, 32-Bit
Sensing Range: ±130mT
Part Status: Active
Contents: Board(s)
auf Bestellung 19 Stücke:
Lieferzeit 10-14 Tag (e)
1+44.23 EUR
Im Einkaufswagen  Stück im Wert von  UAH
IPDD60R190G7XTMA1 IPDD60R190G7XTMA1 Infineon Technologies Infineon-IPDD60R190G7-DS-v02_00-EN.pdf?fileId=5546d4626102d35a01617087dc0f79ea Description: MOSFET N-CH 600V 13A HDSOP-10
Packaging: Tape & Reel (TR)
Package / Case: 10-PowerSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 4.2A, 10V
Power Dissipation (Max): 76W (Tc)
Vgs(th) (Max) @ Id: 4V @ 210µA
Supplier Device Package: PG-HDSOP-10-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 718 pF @ 400 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPDD60R125G7XTMA1 IPDD60R125G7XTMA1 Infineon Technologies Infineon-IPDD60R125G7-DS-v02_00-EN.pdf?fileId=5546d4626102d35a0161706cba27778f Description: MOSFET N-CH 600V 20A HDSOP-10
Packaging: Tape & Reel (TR)
Package / Case: 10-PowerSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 125mOhm @ 6.4A, 10V
Power Dissipation (Max): 120W (Tc)
Vgs(th) (Max) @ Id: 4V @ 320µA
Supplier Device Package: PG-HDSOP-10-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1080 pF @ 400 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPDD60R080G7XTMA1 IPDD60R080G7XTMA1 Infineon Technologies Infineon-IPDD60R080G7-DS-v02_00-EN.pdf?fileId=5546d4626102d35a016170882f757a07 Description: MOSFET N-CH 600V 29A HDSOP-10
Packaging: Tape & Reel (TR)
Package / Case: 10-PowerSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 29A (Tc)
Rds On (Max) @ Id, Vgs: 80mOhm @ 9.7A, 10V
Power Dissipation (Max): 174W (Tc)
Vgs(th) (Max) @ Id: 4V @ 490µA
Supplier Device Package: PG-HDSOP-10-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1640 pF @ 400 V
auf Bestellung 1700 Stücke:
Lieferzeit 10-14 Tag (e)
1700+4.81 EUR
Mindestbestellmenge: 1700
Im Einkaufswagen  Stück im Wert von  UAH
BTS70041EPPXUMA1 Infineon-BTS7004-1EPP-DS-v01_00-EN.pdf?fileId=5546d4626102d35a016147550a725555
BTS70041EPPXUMA1
Hersteller: Infineon Technologies
Description: IC PWR SWTCH N-CHAN 1:1 TSDSO-14
Packaging: Cut Tape (CT)
Package / Case: 14-TSSOP (0.154", 3.90mm Width) Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 4.4mOhm
Voltage - Load: 6V ~ 18V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 15A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-TSDSO-14-22
Fault Protection: Over Current, Over/Under Voltage
Part Status: Active
Grade: Automotive
Qualification: AEC-Q100
auf Bestellung 113 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5+3.63 EUR
10+2.68 EUR
25+2.45 EUR
100+2.19 EUR
Mindestbestellmenge: 5
Im Einkaufswagen  Stück im Wert von  UAH
BTS70802EPAXUMA1 Infineon-BTS7080-2EPA-DS-v01_00-EN.pdf?fileId=5546d4625e763904015e941bf21e2dbe
BTS70802EPAXUMA1
Hersteller: Infineon Technologies
Description: IC PWR SWTCH N-CHAN 1:1 TSDSO-14
Packaging: Cut Tape (CT)
Features: Slew Rate Controlled
Package / Case: 14-TSSOP (0.154", 3.90mm Width) Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 2
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 23.1mOhm
Input Type: Non-Inverting
Voltage - Load: 6V ~ 18V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 3A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-TSDSO-14-22
Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, Over Voltage, UVLO
Part Status: Active
Grade: Automotive
Qualification: AEC-Q100
auf Bestellung 5085 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
8+2.31 EUR
11+1.68 EUR
25+1.52 EUR
100+1.35 EUR
250+1.27 EUR
500+1.22 EUR
1000+1.18 EUR
Mindestbestellmenge: 8
Im Einkaufswagen  Stück im Wert von  UAH
1ED020I12FAXUMA2 1ED020I12FA_Rev3.0_05-21-13.pdf
1ED020I12FAXUMA2
Hersteller: Infineon Technologies
Description: DGTL ISO 4.5KV 1CH GT DVR DSO20
Packaging: Tape & Reel (TR)
Package / Case: 20-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Magnetic Coupling
Current - Output High, Low: 2A, 2A
Voltage - Isolation: 4500Vrms
Supplier Device Package: PG-DSO-20
Rise / Fall Time (Typ): 30ns, 50ns
Part Status: Obsolete
Number of Channels: 1
Voltage - Output Supply: 13V ~ 20V
Grade: Automotive
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BGS12PN10E6327XTSA1 Infineon-BGS12PN10-DS-v01_00-EN.pdf?fileId=5546d46256fb43b30157565d296541b1
BGS12PN10E6327XTSA1
Hersteller: Infineon Technologies
Description: IC RF SWITCH SPDT 6GHZ TSNP10-1
Packaging: Cut Tape (CT)
Package / Case: 10-XFQFN
Impedance: 50Ohm
Mounting Type: Surface Mount
Circuit: SPDT
Operating Temperature: -30°C ~ 85°C
Voltage - Supply: 1.8V ~ 3.6V
Insertion Loss: 0.6dB
Frequency Range: 500MHz ~ 6GHz
Test Frequency: 6GHz
Isolation: 20dB
Supplier Device Package: PG-TSNP-10-1
Part Status: Active
auf Bestellung 2946 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
20+0.92 EUR
28+0.65 EUR
31+0.58 EUR
100+0.50 EUR
250+0.47 EUR
500+0.45 EUR
1000+0.44 EUR
Mindestbestellmenge: 20
Im Einkaufswagen  Stück im Wert von  UAH
IPN50R3K0CEATMA1 Infineon-IPN50R3K0CE-DS-v02_01-EN.pdf?fileId=5546d46253f6505701547adae0c05ad5
IPN50R3K0CEATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 500V 2.6A SOT223
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.6A (Tc)
Rds On (Max) @ Id, Vgs: 3Ohm @ 400mA, 13V
Power Dissipation (Max): 5W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 30µA
Supplier Device Package: PG-SOT223-3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 13V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 4.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 84 pF @ 100 V
auf Bestellung 3541 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
18+1.00 EUR
29+0.63 EUR
100+0.40 EUR
500+0.30 EUR
1000+0.27 EUR
Mindestbestellmenge: 18
Im Einkaufswagen  Stück im Wert von  UAH
BGT24LTR11N16E6327XTSA1 Infineon-BGT24LTR11N16-DS-v01_01-EN.pdf?fileId=5546d4625696ed7601569d2ae3a9158a
BGT24LTR11N16E6327XTSA1
Hersteller: Infineon Technologies
Description: IC RF TXRX 16TSNP
Packaging: Cut Tape (CT)
Package / Case: 16-WFQFN Exposed Pad
Mounting Type: Surface Mount
Frequency: 24GHz ~ 24.25GHz
Type: TxRx Only
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3.3V
Power - Output: 6dBm
Current - Receiving: 45mA
Current - Transmitting: 45mA
Supplier Device Package: PG-TSNP-16-9
Part Status: Active
DigiKey Programmable: Not Verified
auf Bestellung 2142 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+11.42 EUR
10+8.27 EUR
100+6.44 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
IPD60R400CEAUMA1 Infineon-IPD60R400CE-DS-v02_02-EN.pdf?fileId=5546d46249be182c0149c83667001f0c
IPD60R400CEAUMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 600V 14.7A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14.7A (Tc)
Rds On (Max) @ Id, Vgs: 400mOhm @ 3.8A, 10V
Power Dissipation (Max): 112W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 300µA
Supplier Device Package: PG-TO252-2
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 100 V
auf Bestellung 7223 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
7+2.69 EUR
10+1.76 EUR
100+1.20 EUR
500+1.00 EUR
1000+0.91 EUR
Mindestbestellmenge: 7
Im Einkaufswagen  Stück im Wert von  UAH
IPN50R1K4CEATMA1 Infineon-IPN50R1K4CE-DS-v02_01-EN.pdf?fileId=5546d46253f6505701547ac894e25aa7
IPN50R1K4CEATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 500V 4.8A SOT223
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.8A (Tc)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 900mA, 13V
Power Dissipation (Max): 5W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 70µA
Supplier Device Package: PG-SOT223-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 13V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 8.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 178 pF @ 100 V
auf Bestellung 10794 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
19+0.93 EUR
26+0.70 EUR
100+0.52 EUR
500+0.39 EUR
1000+0.33 EUR
Mindestbestellmenge: 19
Im Einkaufswagen  Stück im Wert von  UAH
IPN50R2K0CEATMA1 Infineon-IPN50R2K0CE-DS-v02_01-EN.pdf?fileId=5546d46253f6505701547ac89b1f5aaa
IPN50R2K0CEATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 500V 3.6A SOT223
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.6A (Tc)
Rds On (Max) @ Id, Vgs: 2Ohm @ 600mA, 13V
Power Dissipation (Max): 5W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 50µA
Supplier Device Package: PG-SOT223-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 13V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 124 pF @ 100 V
auf Bestellung 10343 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
21+0.86 EUR
32+0.56 EUR
100+0.39 EUR
500+0.32 EUR
1000+0.29 EUR
Mindestbestellmenge: 21
Im Einkaufswagen  Stück im Wert von  UAH
IPG20N10S4L35ATMA1 Infineon-IPG20N10S4L_35-DS-v01_01-en.pdf?fileId=db3a3043372d5cc8013750d7337e05fd
IPG20N10S4L35ATMA1
Hersteller: Infineon Technologies
Description: MOSFET 2N-CH 100V 20A 8TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 43W
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 20A
Input Capacitance (Ciss) (Max) @ Vds: 1105pF @ 25V
Rds On (Max) @ Id, Vgs: 35mOhm @ 17A, 10V
Gate Charge (Qg) (Max) @ Vgs: 17.4nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.1V @ 16µA
Supplier Device Package: PG-TDSON-8-4
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 34558 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
6+3.01 EUR
10+1.91 EUR
100+1.29 EUR
500+1.02 EUR
1000+0.95 EUR
Mindestbestellmenge: 6
Im Einkaufswagen  Stück im Wert von  UAH
AUIRF8739L2TR auirf8739l2.pdf?fileId=5546d462533600a4015355b0e3241416
AUIRF8739L2TR
Hersteller: Infineon Technologies
Description: MOSFET N-CH 40V 57A DIRECTFET
Packaging: Cut Tape (CT)
Package / Case: DirectFET™ Isometric L8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 57A (Ta), 545A (Tc)
Rds On (Max) @ Id, Vgs: 0.6mOhm @ 195A, 10V
Power Dissipation (Max): 3.8W (Ta), 340W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 250µA
Supplier Device Package: DirectFET™ Isometric L8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): 40V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 562 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 17890 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPG20N06S4L26AATMA1 Infineon-IPG20N06S4L_26A-DS-v01_00-en.pdf?fileId=db3a30433d346a2d013d454e0c275177
IPG20N06S4L26AATMA1
Hersteller: Infineon Technologies
Description: MOSFET 2N-CH 60V 20A 8TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount, Wettable Flank
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 33W
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 20A
Input Capacitance (Ciss) (Max) @ Vds: 1430pF @ 25V
Rds On (Max) @ Id, Vgs: 26mOhm @ 17A, 10V
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.2V @ 10µA
Supplier Device Package: PG-TDSON-8-10
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 4648 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
7+2.60 EUR
11+1.65 EUR
100+1.10 EUR
500+0.87 EUR
1000+0.78 EUR
Mindestbestellmenge: 7
Im Einkaufswagen  Stück im Wert von  UAH
AUIPS6031RTRL auips6031.pdf?fileId=5546d462533600a4015355a797f51311
AUIPS6031RTRL
Hersteller: Infineon Technologies
Description: IC PWR SWITCH N-CHANNEL 1:1 DPAK
Packaging: Cut Tape (CT)
Features: Auto Restart
Package / Case: TO-252-5, DPak (4 Leads + Tab), TO-252AD
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 46mOhm
Input Type: Non-Inverting
Voltage - Load: 36V (Max)
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 2.8A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-TO252-5
Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature
Part Status: Obsolete
Grade: Automotive
Qualification: AEC-Q100
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPD90N10S4L06ATMA1 Infineon-IPD90N10S4L_06-DS-v01_00-en.pdf?fileId=db3a3043372d5cc80137500063630512
IPD90N10S4L06ATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 100V 90A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 6.6mOhm @ 90A, 10V
Power Dissipation (Max): 136W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 90µA
Supplier Device Package: PG-TO252-3-313
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 98 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6250 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 4074 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5+4.28 EUR
10+2.96 EUR
100+2.04 EUR
500+1.65 EUR
1000+1.52 EUR
Mindestbestellmenge: 5
Im Einkaufswagen  Stück im Wert von  UAH
1EBN1001AEXUMA1 Infineon-1EBN1001AE-DS-v03_00-EN.pdf?fileId=5546d462503812bb01505fa4d89805a0
1EBN1001AEXUMA1
Hersteller: Infineon Technologies
Description: IC GATE DRVR HI/LOW SIDE 14SOIC
Packaging: Cut Tape (CT)
Package / Case: 14-SOIC (0.154", 3.90mm Width) Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 13V ~ 18V
High Side Voltage - Max (Bootstrap): 1200 V
Supplier Device Package: PG-DSO-14-43
Rise / Fall Time (Typ): 50ns, 90ns
Channel Type: Single
Driven Configuration: High-Side or Low-Side
Number of Drivers: 1
Gate Type: IGBT, MOSFET (N-Channel, P-Channel)
Logic Voltage - VIL, VIH: 1.5V, 3.5V
Part Status: Active
DigiKey Programmable: Not Verified
Grade: Automotive
Qualification: AEC-Q100
auf Bestellung 4540 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+5.23 EUR
10+3.94 EUR
25+3.61 EUR
100+3.25 EUR
250+3.08 EUR
500+2.98 EUR
1000+2.90 EUR
Mindestbestellmenge: 4
Im Einkaufswagen  Stück im Wert von  UAH
AUIRF5210STRL auirf5210s.pdf?fileId=5546d462533600a4015355acd8ce13c3
AUIRF5210STRL
Hersteller: Infineon Technologies
Description: MOSFET P-CH 100V 38A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 38A (Tc)
Rds On (Max) @ Id, Vgs: 60mOhm @ 38A, 10V
Power Dissipation (Max): 3.1W (Ta), 170W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 230 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2780 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPD65R400CEAUMA1 Infineon-IPD65R400CE-DS-v02_00-EN.pdf?fileId=5546d462533600a401539eb64cd44f67
IPD65R400CEAUMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 650V 15.1A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15.1A (Tc)
Rds On (Max) @ Id, Vgs: 400mOhm @ 3.2A, 10V
Power Dissipation (Max): 118W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 320µA
Supplier Device Package: PG-TO252-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 710 pF @ 100 V
auf Bestellung 50954 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
11+1.72 EUR
15+1.19 EUR
100+0.87 EUR
500+0.75 EUR
1000+0.69 EUR
Mindestbestellmenge: 11
Im Einkaufswagen  Stück im Wert von  UAH
BTS3046SDLATMA1 Infineon-BTS3046SDL-DS-v01_00-EN.pdf?fileId=5546d4625a888733015aad821c9e4c21
BTS3046SDLATMA1
Hersteller: Infineon Technologies
Description: IC PWR SWITCH N-CHAN 1:1 TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Low Side
Rds On (Typ): 46mOhm
Input Type: Non-Inverting
Voltage - Load: 60V (Max)
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 3.6A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-TO252-3-11
Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage
Part Status: Active
auf Bestellung 18716 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
6+3.29 EUR
10+2.43 EUR
25+2.21 EUR
100+1.98 EUR
250+1.86 EUR
500+1.79 EUR
1000+1.74 EUR
Mindestbestellmenge: 6
Im Einkaufswagen  Stück im Wert von  UAH
AUIPS7081STRL auips7081.pdf?fileId=5546d462533600a4015355a7b8d5131e
AUIPS7081STRL
Hersteller: Infineon Technologies
Description: IC PWR SWITCH N-CHAN 1:1 D2PAK-5
Packaging: Cut Tape (CT)
Features: Auto Restart
Package / Case: TO-263-5, D2PAK (4 Leads + Tab), TO-263BB
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 55mOhm
Input Type: Non-Inverting
Voltage - Load: 6V ~ 35V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 2A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-TO263-5
Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature
Part Status: Obsolete
Grade: Automotive
Qualification: AEC-Q100
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BSC0504NSIATMA1 Infineon-BSC0504NSI-DS-v02_00-EN.pdf?fileId=5546d4624eeb2bc7014f0286ff3c3d3d
BSC0504NSIATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 30V 21A/72A TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 72A (Tc)
Rds On (Max) @ Id, Vgs: 3.7mOhm @ 30A, 10V
Power Dissipation (Max): 2.5W (Ta), 30W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TDSON-8-6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 960 pF @ 15 V
auf Bestellung 7451 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
19+0.97 EUR
25+0.70 EUR
100+0.57 EUR
500+0.55 EUR
Mindestbestellmenge: 19
Im Einkaufswagen  Stück im Wert von  UAH
1ED020I12FTAXUMA2 Infineon-1ED020I12FTA-DS-v02_01-en.pdf?fileId=db3a30432e779412012e7b85bdb73874
1ED020I12FTAXUMA2
Hersteller: Infineon Technologies
Description: DGT ISO 4.5KV 1CH GT DVR DSO20
Packaging: Cut Tape (CT)
Package / Case: 20-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Magnetic Coupling
Current - Output High, Low: 2A, 2A
Voltage - Isolation: 4500Vrms
Supplier Device Package: PG-DSO-20-55
Rise / Fall Time (Typ): 30ns, 20ns
Part Status: Not For New Designs
Number of Channels: 1
Voltage - Output Supply: 4.5V ~ 5.5V
auf Bestellung 2677 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+11.69 EUR
10+9.04 EUR
25+8.37 EUR
100+7.64 EUR
250+7.29 EUR
500+7.08 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
TLE73683EXUMA2 Infineon-TLE7368-DS-v02_21-EN.pdf?fileId=5546d46258fc0bc1015969d271b041d1
TLE73683EXUMA2
Hersteller: Infineon Technologies
Description: IC REG AUTO APPL 3OUT DSO-36
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPB65R190C7ATMA1 Infineon-IPB65R190C7-DS-v02_01-en.pdf?fileId=db3a30434208e5fd0142095ff92801d1
IPB65R190C7ATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 650V 13A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 5.7A, 10V
Power Dissipation (Max): 72W (Tc)
Vgs(th) (Max) @ Id: 4V @ 290µA
Supplier Device Package: PG-TO263-3
Part Status: Discontinued at Digi-Key
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1150 pF @ 400 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPB65R110CFDAATMA1 Infineon-IPX65R110CFDA-DS-v02_00-en.pdf?fileId=db3a304336797ff90136ba7c820925a5
IPB65R110CFDAATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 650V 31.2A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 31.2A (Tc)
Rds On (Max) @ Id, Vgs: 110mOhm @ 12.7A, 10V
Power Dissipation (Max): 277.8W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1.3mA
Supplier Device Package: PG-TO263-3
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 118 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3240 pF @ 100 V
Qualification: AEC-Q101
auf Bestellung 1809 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+8.71 EUR
10+6.71 EUR
100+4.99 EUR
500+4.88 EUR
Mindestbestellmenge: 3
Im Einkaufswagen  Stück im Wert von  UAH
IPB180N08S402ATMA1 IPB180N08S4-02-Data-Sheet-10-Infineon.pdf?fileId=5546d4614755559a01475d701b54019c
IPB180N08S402ATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 80V 180A TO263-7
Packaging: Cut Tape (CT)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
Rds On (Max) @ Id, Vgs: 2.2mOhm @ 100A, 10V
Power Dissipation (Max): 277W (Tc)
Vgs(th) (Max) @ Id: 4V @ 220µA
Supplier Device Package: PG-TO263-7-3
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 167 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11550 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 35 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+10.01 EUR
10+6.74 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
BSL308PEH6327XTSA1 Infineon-BSL308PE-DS-v02_03-en.pdf?fileId=db3a30431d8a6b3c011d8ff3592c03d0
BSL308PEH6327XTSA1
Hersteller: Infineon Technologies
Description: MOSFET 2P-CH 30V 2A TSOP6-6
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 500mW
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 2A
Input Capacitance (Ciss) (Max) @ Vds: 500pF @ 15V
Rds On (Max) @ Id, Vgs: 80mOhm @ 2A, 10V
Gate Charge (Qg) (Max) @ Vgs: 5nC @ 10V
FET Feature: Logic Level Gate, 4.5V Drive
Vgs(th) (Max) @ Id: 1V @ 11µA
Supplier Device Package: PG-TSOP6-6
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
auf Bestellung 10633 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
18+0.99 EUR
29+0.61 EUR
100+0.51 EUR
500+0.43 EUR
1000+0.39 EUR
Mindestbestellmenge: 18
Im Einkaufswagen  Stück im Wert von  UAH
BSS138WH6433XTMA1 Infineon-BSS138W-DS-v02_43-en.pdf?fileId=db3a304335113a6301351e62fcb4131f
BSS138WH6433XTMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 60V 280MA SOT323-3
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 280mA (Ta)
Rds On (Max) @ Id, Vgs: 3.5Ohm @ 200mA, 10V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 1.4V @ 26µA
Supplier Device Package: PG-SOT323
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 1.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 43 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 42576 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
53+0.33 EUR
83+0.21 EUR
135+0.13 EUR
1000+0.11 EUR
2000+0.10 EUR
5000+0.09 EUR
Mindestbestellmenge: 53
Im Einkaufswagen  Stück im Wert von  UAH
BSP125H6433XTMA1 Infineon-BSP125-DS-v02_02-en.pdf?fileId=db3a30433b47825b013b50cae9702806
BSP125H6433XTMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 600V 120MA SOT223-4
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120mA (Ta)
Power Dissipation (Max): 1.8W (Ta)
Vgs(th) (Max) @ Id: 2.3V @ 94µA
Supplier Device Package: PG-SOT223-4
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 6.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 150 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 5349 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
22+0.83 EUR
27+0.67 EUR
100+0.54 EUR
1000+0.49 EUR
2000+0.45 EUR
Mindestbestellmenge: 22
Im Einkaufswagen  Stück im Wert von  UAH
BSP129H6906XTSA1 Infineon-BSP129-DS-v01_42-en.pdf?fileId=db3a30433c1a8752013c1fc296d2395f
BSP129H6906XTSA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 240V 350MA SOT223-4
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel, Depletion Mode
Current - Continuous Drain (Id) @ 25°C: 350mA (Ta)
Rds On (Max) @ Id, Vgs: 6Ohm @ 350mA, 10V
Power Dissipation (Max): 1.8W (Ta)
Vgs(th) (Max) @ Id: 1V @ 108µA
Supplier Device Package: PG-SOT223-4
Part Status: Last Time Buy
Drive Voltage (Max Rds On, Min Rds On): 0V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 240 V
Gate Charge (Qg) (Max) @ Vgs: 5.7 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 108 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BSP716NH6327XTSA1 Infineon-BSP716N-DS-v02_00-en.pdf?fileId=db3a304341c1e4a10141da580f3529e9
BSP716NH6327XTSA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 75V 2.3A SOT223-4
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.3A (Ta)
Rds On (Max) @ Id, Vgs: 160mOhm @ 2.3A, 10V
Power Dissipation (Max): 1.8W (Ta)
Vgs(th) (Max) @ Id: 1.8V @ 218µA
Supplier Device Package: PG-SOT223-4
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 13.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 315 pF @ 25 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TLE9871QXA20XUMA2 Infineon-TLE9871QXA20-DS-v01_00-EN.pdf?fileId=5546d4625a888733015a89e33fad3f30
TLE9871QXA20XUMA2
Hersteller: Infineon Technologies
Description: IC SOC MOTOR DRIVER 48VQFN
auf Bestellung 130 Stücke:
Lieferzeit 10-14 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
TLE9877QXA20XUMA2 Infineon-TLE9877QXA20-DS-v01_00-EN.pdf?fileId=5546d4625a888733015a89d127563f28
TLE9877QXA20XUMA2
Hersteller: Infineon Technologies
Description: IC SOC MOTOR DRIVER 48VQFN
Packaging: Cut Tape (CT)
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: LIN, SSI, UART
RAM Size: 6K x 8
Operating Temperature: -40°C ~ 150°C
Voltage - Supply: 5.5V ~ 28V
Program Memory Type: FLASH (64kB)
Applications: Automotive
Core Processor: ARM® Cortex®-M3
Supplier Device Package: PG-VQFN-48-31
Part Status: Not For New Designs
Number of I/O: 10
auf Bestellung 225 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+6.02 EUR
Mindestbestellmenge: 3
Im Einkaufswagen  Stück im Wert von  UAH
TLE9877QXA40XUMA2 Infineon-TLE987x-ProductBrief-PB-v01_00-EN.pdf?fileId=5546d46249a28d750149aee472032794
TLE9877QXA40XUMA2
Hersteller: Infineon Technologies
Description: IC SOC MOTOR DRIVER 48VQFN
Packaging: Cut Tape (CT)
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: LIN, SSI, UART
RAM Size: 6K x 8
Operating Temperature: -40°C ~ 150°C
Voltage - Supply: 5.5V ~ 28V
Program Memory Type: FLASH (64kB)
Core Processor: ARM® Cortex®-M3
Supplier Device Package: PG-VQFN-48-31
Part Status: Active
Number of I/O: 10
DigiKey Programmable: Not Verified
Grade: Automotive
Qualification: AEC-Q100
auf Bestellung 8232 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+9.80 EUR
10+7.50 EUR
25+6.93 EUR
100+6.30 EUR
250+6.00 EUR
500+5.82 EUR
1000+5.67 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
TLE9877QXW40XUMA1 Infineon-TLE987x-ProductBrief-PB-v01_00-EN.pdf?fileId=5546d46249a28d750149aee472032794
TLE9877QXW40XUMA1
Hersteller: Infineon Technologies
Description: IC SOC MOTOR DRIVER 48VQFN
Packaging: Cut Tape (CT)
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: LIN, SSI, UART
RAM Size: 6K x 8
Operating Temperature: -40°C ~ 175°C
Voltage - Supply: 5.5V ~ 28V
Program Memory Type: FLASH (64kB)
Core Processor: ARM® Cortex®-M3
Supplier Device Package: PG-VQFN-48-29
Part Status: Active
Number of I/O: 10
DigiKey Programmable: Not Verified
Grade: Automotive
Qualification: AEC-Q100
auf Bestellung 4824 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+10.72 EUR
10+8.23 EUR
25+7.61 EUR
100+6.93 EUR
250+6.60 EUR
500+6.41 EUR
1000+6.25 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
TLE9879QXA20XUMA2 Infineon-TLE9879QXA20-DS-v01_00-EN.pdf?fileId=5546d46259d9a4bf015a8473ba2274de
TLE9879QXA20XUMA2
Hersteller: Infineon Technologies
Description: IC SOC MOTOR DRIVER 48VQFN
Packaging: Cut Tape (CT)
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: LIN, SSI, UART
RAM Size: 6K x 8
Operating Temperature: -40°C ~ 150°C
Voltage - Supply: 5.5V ~ 28V
Program Memory Type: FLASH (128kB)
Applications: Automotive
Core Processor: ARM® Cortex®-M3
Supplier Device Package: PG-VQFN-48-31
Number of I/O: 10
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TLE9879QXW40XUMA1 Infineon-TLE987x-ProductBrief-PB-v01_00-EN.pdf?fileId=5546d46249a28d750149aee472032794
TLE9879QXW40XUMA1
Hersteller: Infineon Technologies
Description: IC SOC MOTOR DRIVER 48VQFN
Packaging: Cut Tape (CT)
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: LIN, SSI, UART
RAM Size: 6K x 8
Operating Temperature: -40°C ~ 175°C
Voltage - Supply: 5.5V ~ 28V
Program Memory Type: FLASH (128kB)
Core Processor: ARM® Cortex®-M3
Supplier Device Package: PG-VQFN-48-29
Number of I/O: 10
DigiKey Programmable: Not Verified
Grade: Automotive
Qualification: AEC-Q100
auf Bestellung 2425 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+11.30 EUR
10+8.70 EUR
25+8.05 EUR
100+7.34 EUR
250+7.00 EUR
500+6.79 EUR
1000+6.62 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
TLE9867QXA40XUMA2 Infineon-TLE9867QXA40-DS-v01_00-EN.pdf?fileId=5546d4625a888733015a8a3f72423f48
TLE9867QXA40XUMA2
Hersteller: Infineon Technologies
Description: IC SOC MOTOR DRIVER 48VQFN
auf Bestellung 2470 Stücke:
Lieferzeit 10-14 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
TLE9867QXW20XUMA1 Infineon-TLE9867QXW20-DS-v01_00-EN.pdf?fileId=5546d4625b10283a015b2486a2e22e42
TLE9867QXW20XUMA1
Hersteller: Infineon Technologies
Description: IC SOC MOTOR DRIVER 48VQFN
Packaging: Cut Tape (CT)
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: LIN, SSI, UART
RAM Size: 6K x 8
Operating Temperature: -40°C ~ 175°C
Voltage - Supply: 5.5V ~ 28V
Program Memory Type: FLASH (128kB)
Core Processor: ARM® Cortex®-M3
Supplier Device Package: PG-VQFN-48-29
Grade: Automotive
Number of I/O: 10
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
auf Bestellung 4096 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+5.70 EUR
10+5.68 EUR
Mindestbestellmenge: 4
Im Einkaufswagen  Stück im Wert von  UAH
TLE9869QXA20XUMA2 Infineon-TLE9869QXA20-DS-v01_00-EN.pdf?fileId=5546d4625a888733015a8a3614cd3f3c
TLE9869QXA20XUMA2
Hersteller: Infineon Technologies
Description: IC SOC MOTOR DRIVER 48VQFN
Packaging: Cut Tape (CT)
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: LIN, SSI, UART
RAM Size: 6K x 8
Operating Temperature: -40°C ~ 150°C
Voltage - Supply: 5.5V ~ 28V
Program Memory Type: FLASH (128kB)
Core Processor: ARM® Cortex®-M3
Supplier Device Package: PG-VQFN-48-31
Number of I/O: 10
DigiKey Programmable: Not Verified
Grade: Automotive
Qualification: AEC-Q100
auf Bestellung 3714 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+5.72 EUR
Mindestbestellmenge: 4
Im Einkaufswagen  Stück im Wert von  UAH
TLE98432QXXUMA1 Infineon-TLE9843-2QX-DS-v01_00-EN.pdf?fileId=5546d4625a888733015a893e5eaf029b
TLE98432QXXUMA1
Hersteller: Infineon Technologies
Description: EMBEDDED POWER
Packaging: Cut Tape (CT)
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: LIN, SSI, UART
RAM Size: 4K x 8
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 3V ~ 28V
Program Memory Type: FLASH (52kB)
Core Processor: ARM® Cortex®-M0
Supplier Device Package: PG-VQFN-48-31
Part Status: Active
Number of I/O: 10
DigiKey Programmable: Not Verified
Grade: Automotive
Qualification: AEC-Q100
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+7.41 EUR
10+5.62 EUR
25+5.18 EUR
100+4.68 EUR
250+4.45 EUR
500+4.31 EUR
1000+4.19 EUR
Mindestbestellmenge: 3
Im Einkaufswagen  Stück im Wert von  UAH
TLE98422QXXUMA1 Infineon-TLE9842-2QX-DS-v01_00-EN.pdf?fileId=5546d46259d9a4bf015a84aabc5f7511
TLE98422QXXUMA1
Hersteller: Infineon Technologies
Description: EMBEDDED POWER
Packaging: Cut Tape (CT)
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: LIN, SSI, UART
RAM Size: 2K x 8
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 3V ~ 28V
Program Memory Type: FLASH (40kB)
Core Processor: ARM® Cortex®-M0
Supplier Device Package: PG-VQFN-48-31
Grade: Automotive
Number of I/O: 10
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
auf Bestellung 3811 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+7.29 EUR
10+5.52 EUR
25+5.08 EUR
100+4.60 EUR
250+4.37 EUR
500+4.23 EUR
1000+4.11 EUR
Mindestbestellmenge: 3
Im Einkaufswagen  Stück im Wert von  UAH
TLE98442QXXUMA1 Infineon-TLE9844-2QX-DS-v01_00-EN.pdf?fileId=5546d46259d9a4bf015a84a1d6e97509
TLE98442QXXUMA1
Hersteller: Infineon Technologies
Description: IC MOTOR DRIVER 48VQFN
Packaging: Cut Tape (CT)
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: LIN, SSI, UART
RAM Size: 4K x 8
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 3V ~ 28V
Program Memory Type: FLASH (64kB)
Core Processor: ARM® Cortex®-M0
Supplier Device Package: PG-VQFN-48-31
Part Status: Active
Number of I/O: 10
DigiKey Programmable: Not Verified
Grade: Automotive
Qualification: AEC-Q100
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+7.62 EUR
10+5.79 EUR
25+5.33 EUR
100+4.82 EUR
250+4.58 EUR
500+4.44 EUR
1000+4.32 EUR
Mindestbestellmenge: 3
Im Einkaufswagen  Stück im Wert von  UAH
TLE9867QXA40XUMA2 Infineon-TLE9867QXA40-DS-v01_00-EN.pdf?fileId=5546d4625a888733015a8a3f72423f48
TLE9867QXA40XUMA2
Hersteller: Infineon Technologies
Description: IC SOC MOTOR DRIVER 48VQFN
auf Bestellung 2470 Stücke:
Lieferzeit 10-14 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
IRS20965STRPBF irs20965spbf.pdf?fileId=5546d462533600a4015356761d8b279b
IRS20965STRPBF
Hersteller: Infineon Technologies
Description: IC AMP CLASS D MONO 16SOIC
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Output Type: 1-Channel (Mono)
Mounting Type: Surface Mount
Type: Class D
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 10V ~ 15V
Supplier Device Package: 16-SOIC
Part Status: Not For New Designs
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+12.69 EUR
10+9.82 EUR
25+9.10 EUR
100+8.31 EUR
250+7.94 EUR
500+7.71 EUR
1000+7.52 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
IRFHS9351TRPBF irfhs9351pbf.pdf?fileId=5546d462533600a401535623a8d41f63
IRFHS9351TRPBF
Hersteller: Infineon Technologies
Description: MOSFET 2P-CH 30V 2.3A PQFN
Packaging: Cut Tape (CT)
Package / Case: 6-PowerVDFN
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.4W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 2.3A
Input Capacitance (Ciss) (Max) @ Vds: 160pF @ 25V
Rds On (Max) @ Id, Vgs: 170mOhm @ 3.1A, 10V
Gate Charge (Qg) (Max) @ Vgs: 3.7nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.4V @ 10µA
Supplier Device Package: 6-PQFN Dual (2x2)
Part Status: Active
auf Bestellung 12698 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
11+1.60 EUR
18+1.00 EUR
100+0.65 EUR
500+0.50 EUR
1000+0.43 EUR
2000+0.41 EUR
Mindestbestellmenge: 11
Im Einkaufswagen  Stück im Wert von  UAH
BTS3142DNT
BTS3142DNT
Hersteller: Infineon Technologies
Description: IC PWR SWITCH N-CHAN 1:1 TO252-3
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BTS118DNT
BTS118DNT
Hersteller: Infineon Technologies
Description: IC PWR SWITCH N-CHAN 1:1 TO252-3
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BTS142DNT
BTS142DNT
Hersteller: Infineon Technologies
Description: IC PWR SWITCH N-CHAN 1:1 TO252-3
Packaging: Tape & Reel (TR)
Features: Auto Restart
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Low Side
Rds On (Typ): 23mOhm
Input Type: Non-Inverting
Voltage - Load: 42V (Max)
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 4.6A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-TO252-3-11
Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage
Part Status: Obsolete
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BTS3118DNT
Hersteller: Infineon Technologies
Description: IC PWR SWITCH N-CHAN 1:1 TO252-3
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BTS3134NXT
BTS3134NXT
Hersteller: Infineon Technologies
Description: IC PWR SWTCH N-CHAN 1:1 SOT223-4
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Low Side
Rds On (Typ): 35mOhm
Input Type: Non-Inverting
Voltage - Load: 42V (Max)
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 3A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-SOT223-4
Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage
Part Status: Obsolete
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
KIT6W12VBIASICE3TOBO1 Infineon-General_description_KIT_6W_12V_BIAS_ICE3-ATI-v01_01-EN.pdf?fileId=5546d4625debb399015e28e45b1b3dde
KIT6W12VBIASICE3TOBO1
Hersteller: Infineon Technologies
Description: EVAL BOARD FOR ICE3RBR4765JZ
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPLU300N04S4R7XTMA2
IPLU300N04S4R7XTMA2
Hersteller: Infineon Technologies
Description: MOSFET N-CH 40V 300A 8HSOF
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 300A (Tc)
Rds On (Max) @ Id, Vgs: 0.76mOhm @ 100A, 10V
Power Dissipation (Max): 429W (Tc)
Vgs(th) (Max) @ Id: 4V @ 230µA
Supplier Device Package: PG-HSOF-8-1
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 287 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 22945 pF @ 25 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 25
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IKB10N60TATMA1 IKB10N60T+Rev2_3G.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a304412b407950112b428742d3dfe
IKB10N60TATMA1
Hersteller: Infineon Technologies
Description: IGBT NPT FS 600V 20A TO263-3-2
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 115 ns
Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 10A
Supplier Device Package: PG-TO263-3-2
IGBT Type: NPT, Trench Field Stop
Td (on/off) @ 25°C: 12ns/215ns
Switching Energy: 430µJ
Test Condition: 400V, 10A, 23Ohm, 15V
Gate Charge: 62 nC
Part Status: Active
Current - Collector (Ic) (Max): 20 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 30 A
Power - Max: 110 W
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BSZ0589NSATMA1 Infineon-BSZ0589NS-DS-v02_00-EN.pdf?fileId=5546d46258fc0bc101598da704fa60e0
BSZ0589NSATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 30V 17A TSDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Ta)
Rds On (Max) @ Id, Vgs: 4.4mOhm @ 8A, 10V
Power Dissipation (Max): 2.1W (Ta)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TSDSON-8-FL
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 950 pF @ 15 V
auf Bestellung 9792 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
8+2.38 EUR
12+1.50 EUR
100+1.00 EUR
500+0.78 EUR
1000+0.71 EUR
2000+0.65 EUR
Mindestbestellmenge: 8
Im Einkaufswagen  Stück im Wert von  UAH
520966231136
Hersteller: Infineon Technologies
Description: IC FLASH NOR
Packaging: Tray
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
811600-73670880
Hersteller: Infineon Technologies
Description: IC FLASH NOR
Packaging: Tray
Part Status: Obsolete
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TLV493DA1B6MS2GOTOBO1 Infineon-3D%20Magnetic%20Sensor-PB-v03_00-EN.pdf?fileId=5546d46261d5e6820161e7571b2b3dd0
TLV493DA1B6MS2GOTOBO1
Hersteller: Infineon Technologies
Description: EVAL BOARD FOR TLV493D
Packaging: Box
Interface: USB
Voltage - Supply: 5V, USB
Sensor Type: Magnetic, Linear, Rotary Position
Utilized IC / Part: TLV493D-A1B6
Supplied Contents: Board(s)
Embedded: Yes, MCU, 32-Bit
Sensing Range: ±130mT
Part Status: Active
Contents: Board(s)
auf Bestellung 19 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+44.23 EUR
Im Einkaufswagen  Stück im Wert von  UAH
IPDD60R190G7XTMA1 Infineon-IPDD60R190G7-DS-v02_00-EN.pdf?fileId=5546d4626102d35a01617087dc0f79ea
IPDD60R190G7XTMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 600V 13A HDSOP-10
Packaging: Tape & Reel (TR)
Package / Case: 10-PowerSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 4.2A, 10V
Power Dissipation (Max): 76W (Tc)
Vgs(th) (Max) @ Id: 4V @ 210µA
Supplier Device Package: PG-HDSOP-10-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 718 pF @ 400 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPDD60R125G7XTMA1 Infineon-IPDD60R125G7-DS-v02_00-EN.pdf?fileId=5546d4626102d35a0161706cba27778f
IPDD60R125G7XTMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 600V 20A HDSOP-10
Packaging: Tape & Reel (TR)
Package / Case: 10-PowerSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 125mOhm @ 6.4A, 10V
Power Dissipation (Max): 120W (Tc)
Vgs(th) (Max) @ Id: 4V @ 320µA
Supplier Device Package: PG-HDSOP-10-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1080 pF @ 400 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPDD60R080G7XTMA1 Infineon-IPDD60R080G7-DS-v02_00-EN.pdf?fileId=5546d4626102d35a016170882f757a07
IPDD60R080G7XTMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 600V 29A HDSOP-10
Packaging: Tape & Reel (TR)
Package / Case: 10-PowerSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 29A (Tc)
Rds On (Max) @ Id, Vgs: 80mOhm @ 9.7A, 10V
Power Dissipation (Max): 174W (Tc)
Vgs(th) (Max) @ Id: 4V @ 490µA
Supplier Device Package: PG-HDSOP-10-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1640 pF @ 400 V
auf Bestellung 1700 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1700+4.81 EUR
Mindestbestellmenge: 1700
Im Einkaufswagen  Stück im Wert von  UAH
Wählen Sie Seite:   [  << Vorherige Seite ]  1 248 312 313 314 315 316 317 318 319 320 321 322 496 744 992 1240 1488 1736 1984 2232 2480 2482  [ Nächste Seite >> ]