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BGA8U1BN6E6327XTSA1 BGA8U1BN6E6327XTSA1 Infineon Technologies Infineon-BGA8U1BN6-DS-v03_01-EN.pdf?fileId=5546d462617643590161b39607a63591 Description: IC RF AMP 5.15GHZ-5.85GHZ TSNP6
Supplier Device Package: PG-TSNP-6-2
Test Frequency: 5.15GHz ~ 5.85GHz
P1dB: -5dBm
Noise Figure: 1.6dB ~ 5dB
Current - Supply: 4mA
Voltage - Supply: 1.6V ~ 3.1V
Frequency: 5.15GHz ~ 5.85GHz
Mounting Type: Surface Mount
Package / Case: 6-XFDFN
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
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ESD246B1W01005E6327XTSA1 ESD246B1W01005E6327XTSA1 Infineon Technologies Infineon-ESD246-B1-W01005-DS-v01_00-EN.pdf?fileId=5546d4625cc9456a015cf3950edd60e5 Description: TVS DIODE 5.5VWM 7.5V SGWLL22
Packaging: Cut Tape (CT)
Package / Case: 01005 (0402 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C
Applications: General Purpose
Capacitance @ Frequency: 5.5pF @ 1GHz
Current - Peak Pulse (10/1000µs): 5.5A (8/20µs)
Voltage - Reverse Standoff (Typ): 5.5V
Supplier Device Package: SG-WLL-2-2
Bidirectional Channels: 1
Voltage - Clamping (Max) @ Ipp: 7.5V
Power - Peak Pulse: 44W
Power Line Protection: No
auf Bestellung 43198 Stücke:
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125+0.17 EUR
164+0.13 EUR
409+0.051 EUR
500+0.05 EUR
1000+0.048 EUR
2000+0.046 EUR
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IPB60R120C7ATMA1 IPB60R120C7ATMA1 Infineon Technologies Infineon-IPB60R120C7-DS-v02_00-EN.pdf?fileId=5546d46258fc0bc1015917ac3d3b5ea3 Description: MOSFET N-CH 600V 19A TO263-3
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Tc)
Rds On (Max) @ Id, Vgs: 120mOhm @ 7.8A, 10V
Power Dissipation (Max): 92W (Tc)
Vgs(th) (Max) @ Id: 4V @ 390µA
Supplier Device Package: PG-TO263-3-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 400 V
Produkt ist nicht verfügbar
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IPC90N04S53R6ATMA1 IPC90N04S53R6ATMA1 Infineon Technologies Infineon-IPC90N04S5-3R6-DS-v01_00-EN.pdf?fileId=5546d46258fc0bc101590801d898290a Description: MOSFET N-CH 40V 90A 8TDSON-34
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 3.6mOhm @ 45A, 10V
Power Dissipation (Max): 63W (Tc)
Vgs(th) (Max) @ Id: 3.4V @ 23µA
Supplier Device Package: PG-TDSON-8-34
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 32.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1950 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 5200 Stücke:
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8+2.78 EUR
12+1.76 EUR
100+1.18 EUR
500+0.92 EUR
1000+0.83 EUR
2000+0.77 EUR
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IR38363MTRPBFAUMA1 IR38363MTRPBFAUMA1 Infineon Technologies Infineon-IR38163M%20IR38165M%20IR38363M%20IR38365M%20Datasheet-DS-v03_20-EN.pdf?fileId=5546d4625b62cd8a015bcf81f1526e4c Description: IC REG BUCK ADJ 15A 34PQFN
Packaging: Cut Tape (CT)
Package / Case: 34-PowerVFQFN
Output Type: Adjustable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 15A
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Frequency - Switching: 150kHz ~ 1.5MHz
Voltage - Input (Max): 16V
Topology: Buck
Supplier Device Package: 34-PQFN (5x7)
Synchronous Rectifier: Yes
Voltage - Output (Max): 14V
Voltage - Input (Min): 1.5V
Voltage - Output (Min/Fixed): 0.5V
auf Bestellung 4035 Stücke:
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3+10.42 EUR
10+7.98 EUR
25+7.38 EUR
100+6.71 EUR
250+6.39 EUR
500+6.2 EUR
1000+6.03 EUR
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BGC100GN6E6327XTSA1 BGC100GN6E6327XTSA1 Infineon Technologies Infineon-BGC100GN6-DS-v02_01-EN.pdf?fileId=5546d4626102d35a016131b20db05867 Description: RF DIR COUPLER 600MHZ~2.7GHZ
Packaging: Cut Tape (CT)
Package / Case: 6-XFDFN
Mounting Type: Surface Mount
Frequency: 600MHz ~ 2.7GHz
RF Type: Cellular, CDMA, GSM, HSPA+, LTE, TD-SCDMA, W-CDMA
Insertion Loss: 0.3dB
Applications: Cellular, GSM
Coupler Type: Coupler, With Filter
Return Loss: 21dB
Supplier Device Package: PG-TSNP-6-2
auf Bestellung 12217 Stücke:
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25+0.86 EUR
35+0.6 EUR
40+0.54 EUR
100+0.46 EUR
250+0.43 EUR
500+0.4 EUR
1000+0.39 EUR
2500+0.38 EUR
5000+0.37 EUR
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CDM10VD4XTSA1 CDM10VD4XTSA1 Infineon Technologies Infineon-CDM10VD-DS-v01_01-EN.pdf?fileId=5546d4625b62cd8a015ba52a268c663a Description: IC DIMMER FLEXIBLE SOT23-6
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 105°C
Voltage - Supply: 11V ~ 25V
Applications: Dimming Controller
Supplier Device Package: PG-SOT23-6
Part Status: Active
auf Bestellung 2994 Stücke:
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22+0.96 EUR
31+0.68 EUR
35+0.61 EUR
100+0.52 EUR
250+0.49 EUR
500+0.46 EUR
1000+0.45 EUR
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IPC90N04S5L3R3ATMA1 IPC90N04S5L3R3ATMA1 Infineon Technologies Infineon-IPC90N04S5L-3R3-DS-v01_00-EN.pdf?fileId=5546d46258fc0bc10159080203de2913 Description: MOSFET N-CH 40V 90A 8TDSON-34
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 3.3mOhm @ 45A, 10V
Power Dissipation (Max): 62W (Tc)
Vgs(th) (Max) @ Id: 2V @ 23µA
Supplier Device Package: PG-TDSON-8-34
Grade: Automotive
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2145 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 11344 Stücke:
Lieferzeit 10-14 Tag (e)
8+2.89 EUR
12+1.82 EUR
100+1.21 EUR
500+0.95 EUR
1000+0.86 EUR
2000+0.8 EUR
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IPT60R028G7XTMA1 IPT60R028G7XTMA1 Infineon Technologies Infineon-IPT60R028G7-DS-v02_00-EN.pdf?fileId=5546d46259d9a4bf015a13e82df70e30 Description: MOSFET N-CH 600V 75A 8HSOF
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 28mOhm @ 28.8A, 10V
Power Dissipation (Max): 391W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1.44mA
Supplier Device Package: PG-HSOF-8-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 123 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4820 pF @ 400 V
Produkt ist nicht verfügbar
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TLE49655MXTSA1 TLE49655MXTSA1 Infineon Technologies Infineon-TLE4965-5M-DS-v01_00-EN.pdf?fileId=5546d462525dbac4015287ede73527d0 Description: MAGNETIC SWITCH HALL EFF SOT23-3
Features: Temperature Compensated
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Output Type: Open Drain
Polarization: South Pole
Mounting Type: Surface Mount
Function: Unipolar Switch
Operating Temperature: -40°C ~ 170°C
Voltage - Supply: 3V ~ 5.5V
Technology: Hall Effect
Sensing Range: 10.4mT Trip, 2.8mT Release
Current - Output (Max): 5mA
Current - Supply (Max): 2.5mA
Supplier Device Package: PG-SOT23-3-15
Test Condition: 25°C
Part Status: Active
auf Bestellung 1908 Stücke:
Lieferzeit 10-14 Tag (e)
26+0.82 EUR
29+0.73 EUR
31+0.69 EUR
33+0.64 EUR
50+0.61 EUR
100+0.57 EUR
500+0.52 EUR
1000+0.5 EUR
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1EDC05I12AHXUMA1 1EDC05I12AHXUMA1 Infineon Technologies Infineon-1EDCxxI12AH-DS-v02_00-EN.pdf?fileId=5546d4625d5945ed015d88ad8a38235e Description: DGT ISO 2.5KV 1CH GT DVR DSO8-59
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Magnetic Coupling
Voltage - Isolation: 2500Vrms
Supplier Device Package: PG-DSO-8-59
Rise / Fall Time (Typ): 10ns, 9ns
Part Status: Active
Number of Channels: 1
Voltage - Output Supply: 3.1V ~ 17V
Produkt ist nicht verfügbar
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1EDC10I12MHXUMA1 1EDC10I12MHXUMA1 Infineon Technologies Infineon-1EDCxxI12MH-DS-v02_01-EN.pdf?fileId=5546d4625d5945ed015d88ad7bb0235a Description: DGT ISO 2.5KV 1CH GT DVR DSO8-59
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Magnetic Coupling
Voltage - Isolation: 2500Vrms
Supplier Device Package: PG-DSO-8-59
Rise / Fall Time (Typ): 10ns, 9ns
Part Status: Active
Number of Channels: 1
Voltage - Output Supply: 3.1V ~ 17V
auf Bestellung 713 Stücke:
Lieferzeit 10-14 Tag (e)
4+5.93 EUR
10+5.32 EUR
25+5.02 EUR
100+4.36 EUR
250+4.13 EUR
500+3.7 EUR
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1EDC20H12AHXUMA1 1EDC20H12AHXUMA1 Infineon Technologies Infineon-1EDCxxI12AH-DS-v02_00-EN.pdf?fileId=5546d4625d5945ed015d88ad8a38235e Description: DGT ISO 2.5KV 1CH GT DVR DSO8-59
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Magnetic Coupling
Voltage - Isolation: 2500Vrms
Supplier Device Package: PG-DSO-8-59
Rise / Fall Time (Typ): 10ns, 9ns
Part Status: Active
Number of Channels: 1
Voltage - Output Supply: 3.1V ~ 17V
Produkt ist nicht verfügbar
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BGA123L4E6327XTSA1 BGA123L4E6327XTSA1 Infineon Technologies Infineon-BGA%20123L4-DS-v01_00-EN.pdf?fileId=5546d4625fe36784015ffd006b653a7c Description: IC AMP BEIDOU GALI 1.55-1.615GHZ
Packaging: Cut Tape (CT)
Package / Case: 4-XFDFN
Mounting Type: Surface Mount
Frequency: 1.55GHz ~ 1.615GHz
RF Type: Beidou, Galileo, GLONASS, GPS
Voltage - Supply: 1.1V ~ 3.6V
Gain: 18.4dB
Current - Supply: 1.1mA
Noise Figure: 0.75dB
Test Frequency: 1.55GHz ~ 1.615GHz
Part Status: Active
auf Bestellung 24138 Stücke:
Lieferzeit 10-14 Tag (e)
14+1.52 EUR
18+1.17 EUR
25+1.05 EUR
100+0.9 EUR
250+0.82 EUR
500+0.76 EUR
1000+0.71 EUR
5000+0.63 EUR
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BGA8V1BN6E6327XTSA1 BGA8V1BN6E6327XTSA1 Infineon Technologies Infineon-BGA8V1BN6-DS-v03_03-EN.pdf?fileId=5546d462617643590161b39f384935a5 Description: IC RF AMP 3.4GHZ-3.8GHZ TSNP6
Packaging: Cut Tape (CT)
Package / Case: 6-XFDFN
Mounting Type: Surface Mount
Frequency: 3.4GHz ~ 3.8GHz
Voltage - Supply: 1.6V ~ 3.1V
Current - Supply: 4.2mA
Noise Figure: 1.2dB ~ 5.3dB
P1dB: -3dBm
Test Frequency: 3.4GHz ~ 3.8GHz
Supplier Device Package: PG-TSNP-6-2
Produkt ist nicht verfügbar
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BSC010N04LSTATMA1 BSC010N04LSTATMA1 Infineon Technologies infineon-bsc010n04lst-datasheet-en.pdf Description: MOSFET N-CH 40V 39A/100A TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 39A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 1mOhm @ 50A, 10V
Power Dissipation (Max): 3W (Ta), 167W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TDSON-8 FL
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 133 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9520 pF @ 20 V
Produkt ist nicht verfügbar
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BSC011N03LSTATMA1 BSC011N03LSTATMA1 Infineon Technologies Infineon-BSC011N03LST-DS-v02_01-EN.pdf?fileId=5546d462602a9dc801605467a7822cad Description: MOSFET N-CH 30V 39A/100A TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 39A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 1.1mOhm @ 30A, 10V
Power Dissipation (Max): 3W (Ta), 115W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TDSON-8 FL
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 6300 pF @ 15 V
auf Bestellung 4598 Stücke:
Lieferzeit 10-14 Tag (e)
4+5.38 EUR
10+3.49 EUR
100+2.42 EUR
500+2.02 EUR
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BSC014N04LSTATMA1 BSC014N04LSTATMA1 Infineon Technologies Infineon-BSC014N04LST-DS-v02_01-EN.pdf?fileId=5546d462602a9dc80160546e5cba2cb8 Description: MOSFET N-CH 40V 33A/100A TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 33A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 1.4mOhm @ 50A, 10V
Power Dissipation (Max): 3W (Ta), 115W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TDSON-8 FL
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 85 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6020 pF @ 20 V
auf Bestellung 7804 Stücke:
Lieferzeit 10-14 Tag (e)
5+4.3 EUR
10+2.75 EUR
100+1.88 EUR
500+1.5 EUR
1000+1.48 EUR
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BSC014N06NSTATMA1 BSC014N06NSTATMA1 Infineon Technologies Infineon-BSC014N06NST-DS-v02_00-EN.pdf?fileId=5546d462602a9dc80160546e79762cbe Description: MOSFET N-CH 60V 100A TDSON-8 FL
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 1.45mOhm @ 50A, 10V
Power Dissipation (Max): 3W (Ta), 188W (Tc)
Vgs(th) (Max) @ Id: 3.3V @ 120µA
Supplier Device Package: PG-TDSON-8 FL
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 104 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8125 pF @ 30 V
auf Bestellung 4241 Stücke:
Lieferzeit 10-14 Tag (e)
5+4.99 EUR
10+3.22 EUR
100+2.2 EUR
500+1.77 EUR
1000+1.64 EUR
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BSC016N06NSTATMA1 BSC016N06NSTATMA1 Infineon Technologies Infineon-BSC016N06NST-DS-v02_00-EN.pdf?fileId=5546d462602a9dc801605455cb0b2c6e Description: MOSFET N-CH 60V 31A/100A TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 31A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 1.6mOhm @ 50A, 10V
Power Dissipation (Max): 3W (Ta), 167W (Tc)
Vgs(th) (Max) @ Id: 3.3V @ 95µA
Supplier Device Package: PG-TDSON-8 FL
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6500 pF @ 30 V
auf Bestellung 13615 Stücke:
Lieferzeit 10-14 Tag (e)
5+4.8 EUR
10+3.08 EUR
100+2.11 EUR
500+1.69 EUR
1000+1.56 EUR
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BSC019N06NSATMA1 BSC019N06NSATMA1 Infineon Technologies Infineon-BSC019N06NS-DS-v02_01-EN.pdf?fileId=5546d462602a9dc80160546789c12ca7 Description: MOSFET N-CH 60V 100A TDSON-8 FL
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Ta)
Rds On (Max) @ Id, Vgs: 1.95mOhm @ 50A, 10V
Power Dissipation (Max): 136W (Ta)
Vgs(th) (Max) @ Id: 3.3V @ 74µA
Supplier Device Package: PG-TDSON-8 FL
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 77 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5250 pF @ 30 V
auf Bestellung 15357 Stücke:
Lieferzeit 10-14 Tag (e)
9+2.45 EUR
12+1.77 EUR
25+1.61 EUR
100+1.43 EUR
250+1.33 EUR
500+1.29 EUR
1000+1.27 EUR
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BSC028N06NSTATMA1 BSC028N06NSTATMA1 Infineon Technologies Infineon-BSC028N06NST-DS-v02_01-EN.pdf?fileId=5546d462602a9dc80160546e6c1d2cbb Description: MOSFET N-CH 60V 24A/100A TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 2.8mOhm @ 50A, 10V
Power Dissipation (Max): 3W (Ta), 100W (Tc)
Vgs(th) (Max) @ Id: 3.3V @ 50µA
Supplier Device Package: PG-TDSON-8-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3375 pF @ 30 V
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BSC097N06NSTATMA1 BSC097N06NSTATMA1 Infineon Technologies Infineon-BSC097N06NST-DS-v02_00-EN.pdf?fileId=5546d462602a9dc80160546e889d2cc1 Description: MOSFET N-CH 60V 13A/48A TDSON
Input Capacitance (Ciss) (Max) @ Vds: 1075 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Part Status: Not For New Designs
Supplier Device Package: PG-TDSON-8-1
Vgs(th) (Max) @ Id: 3.3V @ 14µA
Power Dissipation (Max): 3W (Ta), 43W (Tc)
Rds On (Max) @ Id, Vgs: 9.7mOhm @ 40A, 10V
Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 48A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
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ESD245B1W0201E6327XTSA1 ESD245B1W0201E6327XTSA1 Infineon Technologies Infineon-ESD245-B1-W0201-DS-v01_00-EN.pdf?fileId=5546d4625cc9456a015cf395340a60ec Description: TVS DIODE 5.5VWM 7.5VC WLL-2-3
Packaging: Cut Tape (CT)
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C
Applications: General Purpose
Capacitance @ Frequency: 5.8pF @ 1GHz
Current - Peak Pulse (10/1000µs): 5.5A (8/20µs)
Voltage - Reverse Standoff (Typ): 5.5V
Supplier Device Package: WLL-2-3
Bidirectional Channels: 1
Voltage - Clamping (Max) @ Ipp: 7.5V
Power - Peak Pulse: 44W
Power Line Protection: No
Part Status: Active
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ICL5102XUMA1 ICL5102XUMA1 Infineon Technologies ICL5102.pdf Description: IC LED DRIVER OFFL NO 16DSO
Voltage - Supply (Max): 18V
Voltage - Supply (Min): 8.5V
Dimming: No
Supplier Device Package: PG-DSO-16-23
Topology: Half-Bridge
Internal Switch(s): No
Applications: LED Lighting
Operating Temperature: -40°C ~ 125°C (TJ)
Type: AC DC Offline Switcher
Frequency: 1.3MHz
Number of Outputs: 1
Mounting Type: Surface Mount
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
Part Status: Obsolete
Produkt ist nicht verfügbar
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IMC102TF064XUMA1 IMC102TF064XUMA1 Infineon Technologies Infineon-IMC100-DS-v01_02-EN.pdf?fileId=5546d46265487f7b016584a0147e7660 Description: IC MOTOR DRIVER 3V-5.5V 64LQFP
Packaging: Cut Tape (CT)
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Function: Controller
Current - Output: 50mA
Interface: Analog, PWM
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 3V ~ 5.5V
Applications: Home Appliance
Supplier Device Package: PG-LQFP-64-26
Motor Type - AC, DC: AC, Synchronous
Part Status: Active
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IPT60R080G7XTMA1 IPT60R080G7XTMA1 Infineon Technologies Infineon-IPT60R080G7-DS-v02_00-EN.pdf?fileId=5546d46259d9a4bf015a13e8059d0e2c Description: MOSFET N-CH 600V 29A 8HSOF
Part Status: Active
Supplier Device Package: PG-HSOF-8-2
Vgs(th) (Max) @ Id: 4V @ 490µA
Power Dissipation (Max): 167W (Tc)
Rds On (Max) @ Id, Vgs: 80mOhm @ 9.7A, 10V
Current - Continuous Drain (Id) @ 25°C: 29A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerSFN
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 1640 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
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TLE493DW2B6A0HTSA1 TLE493DW2B6A0HTSA1 Infineon Technologies TLE493D-W2B6_v1.2_4-9-19.pdf Description: SEN HALL EFFECT I2C PG-TSOP6-6-8
Packaging: Cut Tape (CT)
Features: Programmable
Package / Case: SOT-23-6 Thin, TSOT-23-6
Output Type: I2C
Mounting Type: Surface Mount
Axis: X, Y, Z
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 2.8V ~ 3.5V
Technology: Hall Effect
Resolution: 12 b
Sensing Range: ±160mT ~ ±230mT
Current - Supply (Max): 0.13µA
Supplier Device Package: PG-TSOP6-6-8
Grade: Automotive
Qualification: AEC-Q100
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8+2.69 EUR
10+2.56 EUR
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TLE493DW2B6A1HTSA1 TLE493DW2B6A1HTSA1 Infineon Technologies TLE493D-W2B6_v1.2_4-9-19.pdf Description: SEN HALL EFFECT I2C PG-TSOP6-6-8
Packaging: Cut Tape (CT)
Features: Programmable
Package / Case: SOT-23-6 Thin, TSOT-23-6
Output Type: I2C
Mounting Type: Surface Mount
Axis: X, Y, Z
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 2.8V ~ 3.5V
Technology: Hall Effect
Resolution: 12 b
Sensing Range: ±160mT ~ ±230mT
Current - Supply (Max): 0.13µA
Supplier Device Package: PG-TSOP6-6-8
Part Status: Active
Grade: Automotive
Qualification: AEC-Q100
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TLE493DW2B6A2HTSA1 TLE493DW2B6A2HTSA1 Infineon Technologies TLE493D-W2B6_v1.2_4-9-19.pdf Description: SEN HALL EFFECT I2C PG-TSOP6-6-8
Packaging: Cut Tape (CT)
Features: Programmable
Package / Case: SOT-23-6 Thin, TSOT-23-6
Output Type: I2C
Mounting Type: Surface Mount
Axis: X, Y, Z
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 2.8V ~ 3.5V
Technology: Hall Effect
Resolution: 12 b
Sensing Range: ±160mT ~ ±230mT
Current - Supply (Max): 0.13µA
Supplier Device Package: PG-TSOP6-6-8
Grade: Automotive
Qualification: AEC-Q100
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7+3.03 EUR
8+2.69 EUR
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25+2.4 EUR
50+2.3 EUR
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500+2.01 EUR
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TLE493DW2B6A3HTSA1 TLE493DW2B6A3HTSA1 Infineon Technologies TLE493D-W2B6_v1.2_4-9-19.pdf Description: SEN HALL EFFECT I2C PG-TSOP6-6-8
Packaging: Cut Tape (CT)
Features: Programmable
Package / Case: SOT-23-6 Thin, TSOT-23-6
Output Type: I2C
Mounting Type: Surface Mount
Axis: X, Y, Z
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 2.8V ~ 3.5V
Technology: Hall Effect
Resolution: 12 b
Sensing Range: ±160mT ~ ±230mT
Current - Supply (Max): 0.13µA
Supplier Device Package: PG-TSOP6-6-8
Grade: Automotive
Qualification: AEC-Q100
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7+3.06 EUR
8+2.71 EUR
10+2.59 EUR
25+2.44 EUR
50+2.33 EUR
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500+2.03 EUR
1000+1.96 EUR
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TLS202B1MBV50HTSA1 TLS202B1MBV50HTSA1 Infineon Technologies Infineon-TLS202B1MB%20V50-DS-v01_00-EN.pdf?fileId=5546d4625e37f35a015e4c2775090ca8 Description: IC REG LIN 5V 150MA PG-SCT595-5
Packaging: Cut Tape (CT)
Package / Case: 6-SMD (5 Leads), Gull Wing
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 150mA
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 75 µA
Voltage - Input (Max): 18V
Number of Regulators: 1
Supplier Device Package: PG-SCT595-5
Voltage - Output (Min/Fixed): 5V
Control Features: Enable
Part Status: Active
PSRR: 58dB (10kHz)
Voltage Dropout (Max): 0.57V @ 150mA
Protection Features: Over Current, Over Temperature, Short Circuit
Current - Supply (Max): 200 µA
Grade: Automotive
Qualification: AEC-Q100
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11+1.96 EUR
15+1.42 EUR
25+1.27 EUR
100+1.12 EUR
250+1.05 EUR
500+1.01 EUR
1000+0.99 EUR
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TLS805D1LDV50XUMA1 TLS805D1LDV50XUMA1 Infineon Technologies Infineon-TLS805D1LDV50-DS-v01_00-EN.pdf?fileId=5546d46258fc0bc1015969ed79984250 Description: IC REG LINEAR 5V 50MA PG-TSON-10
Qualification: AEC-Q100
Current - Supply (Max): 16 µA
Protection Features: Over Current, Over Temperature
Voltage Dropout (Max): 0.3V @ 50mA
PSRR: 55dB (100Hz)
Grade: Automotive
Control Features: Enable
Voltage - Output (Min/Fixed): 5V
Supplier Device Package: PG-TSON-10
Number of Regulators: 1
Voltage - Input (Max): 42V
Current - Quiescent (Iq): 11.5 µA
Output Configuration: Positive
Operating Temperature: -40°C ~ 150°C (TJ)
Current - Output: 50mA
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: 10-TFDFN Exposed Pad
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
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AUIR3241STR AUIR3241STR Infineon Technologies Infineon-AUIR3241STR-DS-v01_01-EN.pdf?fileId=5546d4625ee5d4cd015eebed858a5b82 Description: IC GATE DRVR HIGH-SIDE 8SO
Part Status: Active
Current - Peak Output (Source, Sink): 350mA, 350mA
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Gate Type: MOSFET (N-Channel)
Number of Drivers: 1
Driven Configuration: High-Side
Qualification: AEC-Q100
Grade: Automotive
DigiKey Programmable: Not Verified
Channel Type: Single
Rise / Fall Time (Typ): 6µs, 6µs
Supplier Device Package: PG-DSO-8-903
Input Type: Non-Inverting
Voltage - Supply: 3V ~ 36V
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
auf Bestellung 5840 Stücke:
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5+4.88 EUR
10+3.64 EUR
25+3.33 EUR
100+2.99 EUR
250+2.82 EUR
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AUIRS1170STR AUIRS1170STR Infineon Technologies Infineon-AUIRS1170S-DS-v02_30-EN.pdf?fileId=5546d46259d9a4bf0159da788eef0681 Description: IC GATE DRIVER 200V 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Mounting Type: Surface Mount
Voltage - Input: 200V
Operating Temperature: -25°C ~ 125°C (TJ)
Voltage - Supply: 11V ~ 18V
Applications: Secondary-Side Controller
Supplier Device Package: PG-DSO-8-900
Current - Supply: 45 mA
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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BGA5H1BN6E6327XTSA1 BGA5H1BN6E6327XTSA1 Infineon Technologies Infineon-BGA5H1BN6-DS-v02_02-EN.pdf?fileId=5546d462617643590161b39f4c0935a8 Description: IC RF AMP LTE 2.3GHZ-2.69GHZ
Packaging: Cut Tape (CT)
Package / Case: 6-XFDFN
Mounting Type: Surface Mount
Frequency: 2.3GHz ~ 2.69GHz
RF Type: LTE
Voltage - Supply: 1.5V ~ 3.6V
Gain: 18.1dB
Current - Supply: 8.5mA
Noise Figure: 0.7dB
P1dB: -17dBm
Test Frequency: 2.5GHz
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250+0.73 EUR
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IAUT200N08S5N023ATMA1 IAUT200N08S5N023ATMA1 Infineon Technologies Infineon-IAUT200N08S5N023-DS-v01_00-EN.pdf?fileId=5546d4626102d35a01611d61e9ce2ab6 Description: MOSFET N-CH 80V 200A 8HSOF
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 200A (Tc)
Rds On (Max) @ Id, Vgs: 2.3mOhm @ 100A, 10V
Power Dissipation (Max): 200W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 130µA
Supplier Device Package: PG-HSOF-8-1
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7670 pF @ 40 V
Qualification: AEC-Q101
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IAUT240N08S5N019ATMA1 IAUT240N08S5N019ATMA1 Infineon Technologies Infineon-IAUT240N08S5N019-DS-v01_00-EN.pdf?fileId=5546d4625debb399015e0506723e791a Description: MOSFET N-CH 80V 240A 8HSOF
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 240A (Tc)
Rds On (Max) @ Id, Vgs: 1.9mOhm @ 100A, 10V
Power Dissipation (Max): 230W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 160µA
Supplier Device Package: PG-HSOF-8-1
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9264 pF @ 40 V
Qualification: AEC-Q101
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TLE9104SHXUMA1 TLE9104SHXUMA1 Infineon Technologies TLE9104SH_Rev1.31_9-30-20.pdf Description: IC POWERTRAIN SWITCH DSO20-88
Features: Slew Rate Controlled, Status Flag
Packaging: Cut Tape (CT)
Package / Case: 20-BFSOP (0.295", 7.50mm Width) Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 4
Interface: SPI
Type: Powertrain Switch
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C
Output Configuration: Low Side
Rds On (Typ): 150mOhm
Input Type: Non-Inverting
Voltage - Load: 50V ~ 60V
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Current - Output (Max): 3A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-DSO-20-88
Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, Reverse Battery, Short Circuit
DigiKey Programmable: Not Verified
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TLS850B0TBV50ATMA1 TLS850B0TBV50ATMA1 Infineon Technologies Infineon-TLS850B0TB V50-DS-v01_10-EN.pdf?fileId=5546d4625fe3678401600cf1035c6d43 Description: IC REG LIN 5V 500MA PG-TO263-5-1
Packaging: Cut Tape (CT)
Package / Case: TO-263-6, D2PAK (5 Leads + Tab), TO-263BA
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 500mA
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 25 µA
Voltage - Input (Max): 40V
Number of Regulators: 1
Supplier Device Package: PG-TO263-5-1
Voltage - Output (Min/Fixed): 5V
Control Features: Enable
Grade: Automotive
Part Status: Active
PSRR: 60dB (100Hz)
Voltage Dropout (Max): 0.5V @ 250mA
Protection Features: Over Current, Over Temperature
Current - Supply (Max): 33 µA
Qualification: AEC-Q100
auf Bestellung 3258 Stücke:
Lieferzeit 10-14 Tag (e)
6+4.06 EUR
10+3.01 EUR
25+2.75 EUR
100+2.45 EUR
250+2.32 EUR
500+2.24 EUR
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IAUT200N08S5N023ATMA1 IAUT200N08S5N023ATMA1 Infineon Technologies Infineon-IAUT200N08S5N023-DS-v01_00-EN.pdf?fileId=5546d4626102d35a01611d61e9ce2ab6 Description: MOSFET N-CH 80V 200A 8HSOF
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 200A (Tc)
Rds On (Max) @ Id, Vgs: 2.3mOhm @ 100A, 10V
Power Dissipation (Max): 200W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 130µA
Supplier Device Package: PG-HSOF-8-1
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7670 pF @ 40 V
Qualification: AEC-Q101
auf Bestellung 6399 Stücke:
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3+8.27 EUR
10+5.45 EUR
100+3.84 EUR
500+3.27 EUR
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IAUT165N08S5N029ATMA2 IAUT165N08S5N029ATMA2 Infineon Technologies Infineon-IAUT165N08S5N029-DS-v01_00-EN.pdf?fileId=5546d46258fc0bc10158fda2c4bd0569 Description: MOSFET N-CH 80V 165A 8HSOF
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 165A (Tc)
Rds On (Max) @ Id, Vgs: 2.9mOhm @ 80A, 10V
Power Dissipation (Max): 167W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 108µA
Supplier Device Package: PG-HSOF-8-1
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6370 pF @ 40 V
Qualification: AEC-Q101
auf Bestellung 3959 Stücke:
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10+4.36 EUR
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IAUT300N10S5N015ATMA1 IAUT300N10S5N015ATMA1 Infineon Technologies Infineon-IAUT300N10S5N015-DS-v01_00-EN.pdf?fileId=5546d4625ee5d4cd015f2469d7203245 Description: MOSFET N-CH 100V 300A 8HSOF
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 300A (Tc)
Rds On (Max) @ Id, Vgs: 1.5mOhm @ 100A, 10V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 275µA
Supplier Device Package: PG-HSOF-8-1
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 216 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 16011 pF @ 50 V
Qualification: AEC-Q101
auf Bestellung 224 Stücke:
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2+11.5 EUR
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100+5.52 EUR
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IAUT260N10S5N019ATMA1 IAUT260N10S5N019ATMA1 Infineon Technologies Infineon-IAUT260N10S5N019-DS-v01_00-EN.pdf?fileId=5546d4625ee5d4cd015f2460488e3241 Description: MOSFET N-CH 100V 260A 8HSOF
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerSFN
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 11830 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 166 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Part Status: Active
Supplier Device Package: PG-HSOF-8-1
Vgs(th) (Max) @ Id: 3.8V @ 210µA
Power Dissipation (Max): 300W (Tc)
Rds On (Max) @ Id, Vgs: 1.9mOhm @ 100A, 10V
Current - Continuous Drain (Id) @ 25°C: 260A (Tc)
FET Type: N-Channel
Qualification: AEC-Q101
Grade: Automotive
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10+6.79 EUR
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IAUT150N10S5N035ATMA1 IAUT150N10S5N035ATMA1 Infineon Technologies Infineon-IAUT150N10S5N035-DS-v01_00-EN.pdf?fileId=5546d4625ee5d4cd015f246034af323f Description: MOSFET N-CH 100V 150A 8HSOF
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 150A (Tc)
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 75A, 10V
Power Dissipation (Max): 166W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 110µA
Supplier Device Package: PG-HSOF-8-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 87 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6110 pF @ 50 V
Grade: Automotive
Qualification: AEC-Q101
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10+4.52 EUR
100+3.17 EUR
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FF800R17KF6CB2NOSA2 Infineon Technologies Description: IGBT MODULE A-IHM130-1
Packaging: Tray
Produkt ist nicht verfügbar
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TLE49452WAFERX6SA1 Infineon Technologies Description: MAGNETIC FIELD SWITCH
Packaging: Bulk
Produkt ist nicht verfügbar
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TLE4945CHIPX1SA1 Infineon Technologies Description: MAGNETIC FIELD SWITCH
Packaging: Bulk
Produkt ist nicht verfügbar
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AUXMIGP4063D Infineon Technologies Description: IGBT 600V TO-247 COPAK
Part Status: Obsolete
Packaging: Tube
Produkt ist nicht verfügbar
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MB2198-503-E Infineon Technologies Description: TOOL KIT
Part Status: Obsolete
Supplied Contents: Board(s)
Packaging: Bulk
Produkt ist nicht verfügbar
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MB2198-508-E Infineon Technologies MB2198-508-E__OpManual_9-17-08.pdf Description: TOOL KIT
Packaging: Bulk
Part Status: Obsolete
Supplied Contents: Board(s)
Produkt ist nicht verfügbar
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AUIRG4PH50S-205 Infineon Technologies Description: IGBT 1200V 141A TO-247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 33A
Supplier Device Package: TO-247AC
Td (on/off) @ 25°C: -/616ns
Switching Energy: 16mJ (off)
Test Condition: 600V, 33A, 5Ohm, 15V
Gate Charge: 227 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 141 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 99 A
Power - Max: 543 W
Produkt ist nicht verfügbar
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AUXKNG4PH50S-215 Infineon Technologies Description: IGBT 1200V TO247-3
Part Status: Obsolete
Packaging: Tube
Produkt ist nicht verfügbar
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IKB40N65EF5ATMA1 Infineon Technologies Description: IGBT TRENCH FS 650V 74A TO263-3
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 83 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 40A
Supplier Device Package: PG-TO263-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 22ns/160ns
Switching Energy: 420µJ (on), 100µJ (off)
Test Condition: 400V, 40A, 15Ohm, 15V
Gate Charge: 95 nC
Part Status: Active
Current - Collector (Ic) (Max): 74 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 160 A
Power - Max: 250 W
Produkt ist nicht verfügbar
 Mindestbestellmenge: 1000 Stücke
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IKB40N65EH5ATMA1 IKB40N65EH5ATMA1 Infineon Technologies Infineon-IKB40N65EH5-DS-v02_01-EN.pdf?fileId=5546d462625a528f0162a9221b17693f Description: IGBT TRENCH FS 650V 74A TO263-3
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 78 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 40A
Supplier Device Package: PG-TO263-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 20ns/157ns
Switching Energy: 1.1mJ (on), 400µJ (off)
Test Condition: 400V, 40A, 15Ohm, 15V
Gate Charge: 95 nC
Part Status: Active
Current - Collector (Ic) (Max): 74 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 160 A
Power - Max: 250 W
Produkt ist nicht verfügbar
 Mindestbestellmenge: 1000 Stücke
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IKB40N65ES5ATMA1 Infineon Technologies Description: IGBT TRENCH FS 650V 79A TO263-3
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 73 ns
Vce(on) (Max) @ Vge, Ic: 1.74V @ 15V, 40A
Supplier Device Package: PG-TO263-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 19ns/130ns
Switching Energy: 860µJ (on), 400µJ (off)
Test Condition: 400V, 40A, 10Ohm, 15V
Gate Charge: 95 nC
Part Status: Active
Current - Collector (Ic) (Max): 79 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 160 A
Power - Max: 230 W
auf Bestellung 1000 Stücke:
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1000+3.17 EUR
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IGB50N65S5ATMA1 IGB50N65S5ATMA1 Infineon Technologies Infineon-IGB50N65S5-DS-v02_02-EN.pdf?fileId=5546d4625e763904015ec81bbc6f2fec Description: IGBT TRENCH FS 650V 80A TO263-3
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 50A
Supplier Device Package: PG-TO263-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 20ns/139ns
Switching Energy: 1.23mJ (on), 740µJ (off)
Test Condition: 400V, 50A, 8.2Ohm, 15V
Gate Charge: 120 nC
Part Status: Active
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 200 A
Power - Max: 270 W
auf Bestellung 939 Stücke:
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4+6.78 EUR
10+4.43 EUR
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IGB50N65H5ATMA1 Infineon Technologies Description: IGBT TRENCH FS 650V 80A TO263-3
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 50A
Supplier Device Package: PG-TO263-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 23ns/173ns
Switching Energy: 1.59mJ (on), 750µJ (off)
Test Condition: 400V, 50A, 12Ohm, 15V
Gate Charge: 120 nC
Part Status: Active
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 150 A
Power - Max: 270 W
auf Bestellung 2429 Stücke:
Lieferzeit 10-14 Tag (e)
4+6.78 EUR
10+4.43 EUR
100+3.08 EUR
500+2.52 EUR
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IKB40N65EF5ATMA1 Infineon Technologies Description: IGBT TRENCH FS 650V 74A TO263-3
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 83 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 40A
Supplier Device Package: PG-TO263-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 22ns/160ns
Switching Energy: 420µJ (on), 100µJ (off)
Test Condition: 400V, 40A, 15Ohm, 15V
Gate Charge: 95 nC
Part Status: Active
Current - Collector (Ic) (Max): 74 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 160 A
Power - Max: 250 W
auf Bestellung 886 Stücke:
Lieferzeit 10-14 Tag (e)
2+10.83 EUR
10+7.19 EUR
100+5.11 EUR
500+4.22 EUR
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IKB40N65EH5ATMA1 IKB40N65EH5ATMA1 Infineon Technologies Infineon-IKB40N65EH5-DS-v02_01-EN.pdf?fileId=5546d462625a528f0162a9221b17693f Description: IGBT TRENCH FS 650V 74A TO263-3
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 78 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 40A
Supplier Device Package: PG-TO263-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 20ns/157ns
Switching Energy: 1.1mJ (on), 400µJ (off)
Test Condition: 400V, 40A, 15Ohm, 15V
Gate Charge: 95 nC
Part Status: Active
Current - Collector (Ic) (Max): 74 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 160 A
Power - Max: 250 W
auf Bestellung 435 Stücke:
Lieferzeit 10-14 Tag (e)
3+7.52 EUR
10+4.95 EUR
100+3.49 EUR
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BGA8U1BN6E6327XTSA1 Infineon-BGA8U1BN6-DS-v03_01-EN.pdf?fileId=5546d462617643590161b39607a63591
BGA8U1BN6E6327XTSA1
Hersteller: Infineon Technologies
Description: IC RF AMP 5.15GHZ-5.85GHZ TSNP6
Supplier Device Package: PG-TSNP-6-2
Test Frequency: 5.15GHz ~ 5.85GHz
P1dB: -5dBm
Noise Figure: 1.6dB ~ 5dB
Current - Supply: 4mA
Voltage - Supply: 1.6V ~ 3.1V
Frequency: 5.15GHz ~ 5.85GHz
Mounting Type: Surface Mount
Package / Case: 6-XFDFN
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
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ESD246B1W01005E6327XTSA1 Infineon-ESD246-B1-W01005-DS-v01_00-EN.pdf?fileId=5546d4625cc9456a015cf3950edd60e5
ESD246B1W01005E6327XTSA1
Hersteller: Infineon Technologies
Description: TVS DIODE 5.5VWM 7.5V SGWLL22
Packaging: Cut Tape (CT)
Package / Case: 01005 (0402 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C
Applications: General Purpose
Capacitance @ Frequency: 5.5pF @ 1GHz
Current - Peak Pulse (10/1000µs): 5.5A (8/20µs)
Voltage - Reverse Standoff (Typ): 5.5V
Supplier Device Package: SG-WLL-2-2
Bidirectional Channels: 1
Voltage - Clamping (Max) @ Ipp: 7.5V
Power - Peak Pulse: 44W
Power Line Protection: No
auf Bestellung 43198 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
125+0.17 EUR
164+0.13 EUR
409+0.051 EUR
500+0.05 EUR
1000+0.048 EUR
2000+0.046 EUR
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IPB60R120C7ATMA1 Infineon-IPB60R120C7-DS-v02_00-EN.pdf?fileId=5546d46258fc0bc1015917ac3d3b5ea3
IPB60R120C7ATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 600V 19A TO263-3
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Tc)
Rds On (Max) @ Id, Vgs: 120mOhm @ 7.8A, 10V
Power Dissipation (Max): 92W (Tc)
Vgs(th) (Max) @ Id: 4V @ 390µA
Supplier Device Package: PG-TO263-3-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 400 V
Produkt ist nicht verfügbar
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IPC90N04S53R6ATMA1 Infineon-IPC90N04S5-3R6-DS-v01_00-EN.pdf?fileId=5546d46258fc0bc101590801d898290a
IPC90N04S53R6ATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 40V 90A 8TDSON-34
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 3.6mOhm @ 45A, 10V
Power Dissipation (Max): 63W (Tc)
Vgs(th) (Max) @ Id: 3.4V @ 23µA
Supplier Device Package: PG-TDSON-8-34
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 32.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1950 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 5200 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
8+2.78 EUR
12+1.76 EUR
100+1.18 EUR
500+0.92 EUR
1000+0.83 EUR
2000+0.77 EUR
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IR38363MTRPBFAUMA1 Infineon-IR38163M%20IR38165M%20IR38363M%20IR38365M%20Datasheet-DS-v03_20-EN.pdf?fileId=5546d4625b62cd8a015bcf81f1526e4c
IR38363MTRPBFAUMA1
Hersteller: Infineon Technologies
Description: IC REG BUCK ADJ 15A 34PQFN
Packaging: Cut Tape (CT)
Package / Case: 34-PowerVFQFN
Output Type: Adjustable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 15A
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Frequency - Switching: 150kHz ~ 1.5MHz
Voltage - Input (Max): 16V
Topology: Buck
Supplier Device Package: 34-PQFN (5x7)
Synchronous Rectifier: Yes
Voltage - Output (Max): 14V
Voltage - Input (Min): 1.5V
Voltage - Output (Min/Fixed): 0.5V
auf Bestellung 4035 Stücke:
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3+10.42 EUR
10+7.98 EUR
25+7.38 EUR
100+6.71 EUR
250+6.39 EUR
500+6.2 EUR
1000+6.03 EUR
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BGC100GN6E6327XTSA1 Infineon-BGC100GN6-DS-v02_01-EN.pdf?fileId=5546d4626102d35a016131b20db05867
BGC100GN6E6327XTSA1
Hersteller: Infineon Technologies
Description: RF DIR COUPLER 600MHZ~2.7GHZ
Packaging: Cut Tape (CT)
Package / Case: 6-XFDFN
Mounting Type: Surface Mount
Frequency: 600MHz ~ 2.7GHz
RF Type: Cellular, CDMA, GSM, HSPA+, LTE, TD-SCDMA, W-CDMA
Insertion Loss: 0.3dB
Applications: Cellular, GSM
Coupler Type: Coupler, With Filter
Return Loss: 21dB
Supplier Device Package: PG-TSNP-6-2
auf Bestellung 12217 Stücke:
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AnzahlPrivatkunde
25+0.86 EUR
35+0.6 EUR
40+0.54 EUR
100+0.46 EUR
250+0.43 EUR
500+0.4 EUR
1000+0.39 EUR
2500+0.38 EUR
5000+0.37 EUR
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CDM10VD4XTSA1 Infineon-CDM10VD-DS-v01_01-EN.pdf?fileId=5546d4625b62cd8a015ba52a268c663a
CDM10VD4XTSA1
Hersteller: Infineon Technologies
Description: IC DIMMER FLEXIBLE SOT23-6
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 105°C
Voltage - Supply: 11V ~ 25V
Applications: Dimming Controller
Supplier Device Package: PG-SOT23-6
Part Status: Active
auf Bestellung 2994 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
22+0.96 EUR
31+0.68 EUR
35+0.61 EUR
100+0.52 EUR
250+0.49 EUR
500+0.46 EUR
1000+0.45 EUR
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IPC90N04S5L3R3ATMA1 Infineon-IPC90N04S5L-3R3-DS-v01_00-EN.pdf?fileId=5546d46258fc0bc10159080203de2913
IPC90N04S5L3R3ATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 40V 90A 8TDSON-34
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 3.3mOhm @ 45A, 10V
Power Dissipation (Max): 62W (Tc)
Vgs(th) (Max) @ Id: 2V @ 23µA
Supplier Device Package: PG-TDSON-8-34
Grade: Automotive
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2145 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 11344 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
8+2.89 EUR
12+1.82 EUR
100+1.21 EUR
500+0.95 EUR
1000+0.86 EUR
2000+0.8 EUR
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IPT60R028G7XTMA1 Infineon-IPT60R028G7-DS-v02_00-EN.pdf?fileId=5546d46259d9a4bf015a13e82df70e30
IPT60R028G7XTMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 600V 75A 8HSOF
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 28mOhm @ 28.8A, 10V
Power Dissipation (Max): 391W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1.44mA
Supplier Device Package: PG-HSOF-8-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 123 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4820 pF @ 400 V
Produkt ist nicht verfügbar
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TLE49655MXTSA1 Infineon-TLE4965-5M-DS-v01_00-EN.pdf?fileId=5546d462525dbac4015287ede73527d0
TLE49655MXTSA1
Hersteller: Infineon Technologies
Description: MAGNETIC SWITCH HALL EFF SOT23-3
Features: Temperature Compensated
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Output Type: Open Drain
Polarization: South Pole
Mounting Type: Surface Mount
Function: Unipolar Switch
Operating Temperature: -40°C ~ 170°C
Voltage - Supply: 3V ~ 5.5V
Technology: Hall Effect
Sensing Range: 10.4mT Trip, 2.8mT Release
Current - Output (Max): 5mA
Current - Supply (Max): 2.5mA
Supplier Device Package: PG-SOT23-3-15
Test Condition: 25°C
Part Status: Active
auf Bestellung 1908 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
26+0.82 EUR
29+0.73 EUR
31+0.69 EUR
33+0.64 EUR
50+0.61 EUR
100+0.57 EUR
500+0.52 EUR
1000+0.5 EUR
Mindestbestellmenge: 26 Stücke
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1EDC05I12AHXUMA1 Infineon-1EDCxxI12AH-DS-v02_00-EN.pdf?fileId=5546d4625d5945ed015d88ad8a38235e
1EDC05I12AHXUMA1
Hersteller: Infineon Technologies
Description: DGT ISO 2.5KV 1CH GT DVR DSO8-59
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Magnetic Coupling
Voltage - Isolation: 2500Vrms
Supplier Device Package: PG-DSO-8-59
Rise / Fall Time (Typ): 10ns, 9ns
Part Status: Active
Number of Channels: 1
Voltage - Output Supply: 3.1V ~ 17V
Produkt ist nicht verfügbar
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1EDC10I12MHXUMA1 Infineon-1EDCxxI12MH-DS-v02_01-EN.pdf?fileId=5546d4625d5945ed015d88ad7bb0235a
1EDC10I12MHXUMA1
Hersteller: Infineon Technologies
Description: DGT ISO 2.5KV 1CH GT DVR DSO8-59
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Magnetic Coupling
Voltage - Isolation: 2500Vrms
Supplier Device Package: PG-DSO-8-59
Rise / Fall Time (Typ): 10ns, 9ns
Part Status: Active
Number of Channels: 1
Voltage - Output Supply: 3.1V ~ 17V
auf Bestellung 713 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
4+5.93 EUR
10+5.32 EUR
25+5.02 EUR
100+4.36 EUR
250+4.13 EUR
500+3.7 EUR
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1EDC20H12AHXUMA1 Infineon-1EDCxxI12AH-DS-v02_00-EN.pdf?fileId=5546d4625d5945ed015d88ad8a38235e
1EDC20H12AHXUMA1
Hersteller: Infineon Technologies
Description: DGT ISO 2.5KV 1CH GT DVR DSO8-59
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Magnetic Coupling
Voltage - Isolation: 2500Vrms
Supplier Device Package: PG-DSO-8-59
Rise / Fall Time (Typ): 10ns, 9ns
Part Status: Active
Number of Channels: 1
Voltage - Output Supply: 3.1V ~ 17V
Produkt ist nicht verfügbar
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BGA123L4E6327XTSA1 Infineon-BGA%20123L4-DS-v01_00-EN.pdf?fileId=5546d4625fe36784015ffd006b653a7c
BGA123L4E6327XTSA1
Hersteller: Infineon Technologies
Description: IC AMP BEIDOU GALI 1.55-1.615GHZ
Packaging: Cut Tape (CT)
Package / Case: 4-XFDFN
Mounting Type: Surface Mount
Frequency: 1.55GHz ~ 1.615GHz
RF Type: Beidou, Galileo, GLONASS, GPS
Voltage - Supply: 1.1V ~ 3.6V
Gain: 18.4dB
Current - Supply: 1.1mA
Noise Figure: 0.75dB
Test Frequency: 1.55GHz ~ 1.615GHz
Part Status: Active
auf Bestellung 24138 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
14+1.52 EUR
18+1.17 EUR
25+1.05 EUR
100+0.9 EUR
250+0.82 EUR
500+0.76 EUR
1000+0.71 EUR
5000+0.63 EUR
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BGA8V1BN6E6327XTSA1 Infineon-BGA8V1BN6-DS-v03_03-EN.pdf?fileId=5546d462617643590161b39f384935a5
BGA8V1BN6E6327XTSA1
Hersteller: Infineon Technologies
Description: IC RF AMP 3.4GHZ-3.8GHZ TSNP6
Packaging: Cut Tape (CT)
Package / Case: 6-XFDFN
Mounting Type: Surface Mount
Frequency: 3.4GHz ~ 3.8GHz
Voltage - Supply: 1.6V ~ 3.1V
Current - Supply: 4.2mA
Noise Figure: 1.2dB ~ 5.3dB
P1dB: -3dBm
Test Frequency: 3.4GHz ~ 3.8GHz
Supplier Device Package: PG-TSNP-6-2
Produkt ist nicht verfügbar
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BSC010N04LSTATMA1 infineon-bsc010n04lst-datasheet-en.pdf
BSC010N04LSTATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 40V 39A/100A TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 39A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 1mOhm @ 50A, 10V
Power Dissipation (Max): 3W (Ta), 167W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TDSON-8 FL
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 133 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9520 pF @ 20 V
Produkt ist nicht verfügbar
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BSC011N03LSTATMA1 Infineon-BSC011N03LST-DS-v02_01-EN.pdf?fileId=5546d462602a9dc801605467a7822cad
BSC011N03LSTATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 30V 39A/100A TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 39A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 1.1mOhm @ 30A, 10V
Power Dissipation (Max): 3W (Ta), 115W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TDSON-8 FL
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 6300 pF @ 15 V
auf Bestellung 4598 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
4+5.38 EUR
10+3.49 EUR
100+2.42 EUR
500+2.02 EUR
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BSC014N04LSTATMA1 Infineon-BSC014N04LST-DS-v02_01-EN.pdf?fileId=5546d462602a9dc80160546e5cba2cb8
BSC014N04LSTATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 40V 33A/100A TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 33A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 1.4mOhm @ 50A, 10V
Power Dissipation (Max): 3W (Ta), 115W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TDSON-8 FL
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 85 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6020 pF @ 20 V
auf Bestellung 7804 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
5+4.3 EUR
10+2.75 EUR
100+1.88 EUR
500+1.5 EUR
1000+1.48 EUR
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BSC014N06NSTATMA1 Infineon-BSC014N06NST-DS-v02_00-EN.pdf?fileId=5546d462602a9dc80160546e79762cbe
BSC014N06NSTATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 60V 100A TDSON-8 FL
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 1.45mOhm @ 50A, 10V
Power Dissipation (Max): 3W (Ta), 188W (Tc)
Vgs(th) (Max) @ Id: 3.3V @ 120µA
Supplier Device Package: PG-TDSON-8 FL
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 104 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8125 pF @ 30 V
auf Bestellung 4241 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
5+4.99 EUR
10+3.22 EUR
100+2.2 EUR
500+1.77 EUR
1000+1.64 EUR
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BSC016N06NSTATMA1 Infineon-BSC016N06NST-DS-v02_00-EN.pdf?fileId=5546d462602a9dc801605455cb0b2c6e
BSC016N06NSTATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 60V 31A/100A TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 31A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 1.6mOhm @ 50A, 10V
Power Dissipation (Max): 3W (Ta), 167W (Tc)
Vgs(th) (Max) @ Id: 3.3V @ 95µA
Supplier Device Package: PG-TDSON-8 FL
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6500 pF @ 30 V
auf Bestellung 13615 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
5+4.8 EUR
10+3.08 EUR
100+2.11 EUR
500+1.69 EUR
1000+1.56 EUR
Mindestbestellmenge: 5 Stücke
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BSC019N06NSATMA1 Infineon-BSC019N06NS-DS-v02_01-EN.pdf?fileId=5546d462602a9dc80160546789c12ca7
BSC019N06NSATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 60V 100A TDSON-8 FL
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Ta)
Rds On (Max) @ Id, Vgs: 1.95mOhm @ 50A, 10V
Power Dissipation (Max): 136W (Ta)
Vgs(th) (Max) @ Id: 3.3V @ 74µA
Supplier Device Package: PG-TDSON-8 FL
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 77 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5250 pF @ 30 V
auf Bestellung 15357 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
9+2.45 EUR
12+1.77 EUR
25+1.61 EUR
100+1.43 EUR
250+1.33 EUR
500+1.29 EUR
1000+1.27 EUR
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BSC028N06NSTATMA1 Infineon-BSC028N06NST-DS-v02_01-EN.pdf?fileId=5546d462602a9dc80160546e6c1d2cbb
BSC028N06NSTATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 60V 24A/100A TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 2.8mOhm @ 50A, 10V
Power Dissipation (Max): 3W (Ta), 100W (Tc)
Vgs(th) (Max) @ Id: 3.3V @ 50µA
Supplier Device Package: PG-TDSON-8-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3375 pF @ 30 V
auf Bestellung 7310 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
4+5.43 EUR
10+3.51 EUR
100+2.43 EUR
500+2.02 EUR
Mindestbestellmenge: 4 Stücke
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BSC097N06NSTATMA1 Infineon-BSC097N06NST-DS-v02_00-EN.pdf?fileId=5546d462602a9dc80160546e889d2cc1
BSC097N06NSTATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 60V 13A/48A TDSON
Input Capacitance (Ciss) (Max) @ Vds: 1075 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Part Status: Not For New Designs
Supplier Device Package: PG-TDSON-8-1
Vgs(th) (Max) @ Id: 3.3V @ 14µA
Power Dissipation (Max): 3W (Ta), 43W (Tc)
Rds On (Max) @ Id, Vgs: 9.7mOhm @ 40A, 10V
Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 48A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
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ESD245B1W0201E6327XTSA1 Infineon-ESD245-B1-W0201-DS-v01_00-EN.pdf?fileId=5546d4625cc9456a015cf395340a60ec
ESD245B1W0201E6327XTSA1
Hersteller: Infineon Technologies
Description: TVS DIODE 5.5VWM 7.5VC WLL-2-3
Packaging: Cut Tape (CT)
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C
Applications: General Purpose
Capacitance @ Frequency: 5.8pF @ 1GHz
Current - Peak Pulse (10/1000µs): 5.5A (8/20µs)
Voltage - Reverse Standoff (Typ): 5.5V
Supplier Device Package: WLL-2-3
Bidirectional Channels: 1
Voltage - Clamping (Max) @ Ipp: 7.5V
Power - Peak Pulse: 44W
Power Line Protection: No
Part Status: Active
auf Bestellung 39385 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
56+0.38 EUR
93+0.23 EUR
151+0.14 EUR
500+0.1 EUR
1000+0.088 EUR
2000+0.077 EUR
5000+0.067 EUR
Mindestbestellmenge: 56 Stücke
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ICL5102XUMA1 ICL5102.pdf
ICL5102XUMA1
Hersteller: Infineon Technologies
Description: IC LED DRIVER OFFL NO 16DSO
Voltage - Supply (Max): 18V
Voltage - Supply (Min): 8.5V
Dimming: No
Supplier Device Package: PG-DSO-16-23
Topology: Half-Bridge
Internal Switch(s): No
Applications: LED Lighting
Operating Temperature: -40°C ~ 125°C (TJ)
Type: AC DC Offline Switcher
Frequency: 1.3MHz
Number of Outputs: 1
Mounting Type: Surface Mount
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
Part Status: Obsolete
Produkt ist nicht verfügbar
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IMC102TF064XUMA1 Infineon-IMC100-DS-v01_02-EN.pdf?fileId=5546d46265487f7b016584a0147e7660
IMC102TF064XUMA1
Hersteller: Infineon Technologies
Description: IC MOTOR DRIVER 3V-5.5V 64LQFP
Packaging: Cut Tape (CT)
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Function: Controller
Current - Output: 50mA
Interface: Analog, PWM
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 3V ~ 5.5V
Applications: Home Appliance
Supplier Device Package: PG-LQFP-64-26
Motor Type - AC, DC: AC, Synchronous
Part Status: Active
auf Bestellung 1700 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2+15.16 EUR
10+10.32 EUR
100+7.57 EUR
500+7.52 EUR
Mindestbestellmenge: 2 Stücke
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IPT60R080G7XTMA1 Infineon-IPT60R080G7-DS-v02_00-EN.pdf?fileId=5546d46259d9a4bf015a13e8059d0e2c
IPT60R080G7XTMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 600V 29A 8HSOF
Part Status: Active
Supplier Device Package: PG-HSOF-8-2
Vgs(th) (Max) @ Id: 4V @ 490µA
Power Dissipation (Max): 167W (Tc)
Rds On (Max) @ Id, Vgs: 80mOhm @ 9.7A, 10V
Current - Continuous Drain (Id) @ 25°C: 29A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerSFN
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 1640 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
auf Bestellung 5341 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2+13.4 EUR
10+9.04 EUR
100+6.58 EUR
500+5.64 EUR
Mindestbestellmenge: 2 Stücke
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TLE493DW2B6A0HTSA1 TLE493D-W2B6_v1.2_4-9-19.pdf
TLE493DW2B6A0HTSA1
Hersteller: Infineon Technologies
Description: SEN HALL EFFECT I2C PG-TSOP6-6-8
Packaging: Cut Tape (CT)
Features: Programmable
Package / Case: SOT-23-6 Thin, TSOT-23-6
Output Type: I2C
Mounting Type: Surface Mount
Axis: X, Y, Z
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 2.8V ~ 3.5V
Technology: Hall Effect
Resolution: 12 b
Sensing Range: ±160mT ~ ±230mT
Current - Supply (Max): 0.13µA
Supplier Device Package: PG-TSOP6-6-8
Grade: Automotive
Qualification: AEC-Q100
auf Bestellung 11638 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
7+3.03 EUR
8+2.69 EUR
10+2.56 EUR
25+2.4 EUR
50+2.3 EUR
100+2.2 EUR
500+2.01 EUR
1000+1.94 EUR
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TLE493DW2B6A1HTSA1 TLE493D-W2B6_v1.2_4-9-19.pdf
TLE493DW2B6A1HTSA1
Hersteller: Infineon Technologies
Description: SEN HALL EFFECT I2C PG-TSOP6-6-8
Packaging: Cut Tape (CT)
Features: Programmable
Package / Case: SOT-23-6 Thin, TSOT-23-6
Output Type: I2C
Mounting Type: Surface Mount
Axis: X, Y, Z
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 2.8V ~ 3.5V
Technology: Hall Effect
Resolution: 12 b
Sensing Range: ±160mT ~ ±230mT
Current - Supply (Max): 0.13µA
Supplier Device Package: PG-TSOP6-6-8
Part Status: Active
Grade: Automotive
Qualification: AEC-Q100
auf Bestellung 4243 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
7+3.03 EUR
8+2.69 EUR
10+2.56 EUR
25+2.4 EUR
50+2.3 EUR
100+2.2 EUR
500+2.01 EUR
1000+1.94 EUR
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TLE493DW2B6A2HTSA1 TLE493D-W2B6_v1.2_4-9-19.pdf
TLE493DW2B6A2HTSA1
Hersteller: Infineon Technologies
Description: SEN HALL EFFECT I2C PG-TSOP6-6-8
Packaging: Cut Tape (CT)
Features: Programmable
Package / Case: SOT-23-6 Thin, TSOT-23-6
Output Type: I2C
Mounting Type: Surface Mount
Axis: X, Y, Z
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 2.8V ~ 3.5V
Technology: Hall Effect
Resolution: 12 b
Sensing Range: ±160mT ~ ±230mT
Current - Supply (Max): 0.13µA
Supplier Device Package: PG-TSOP6-6-8
Grade: Automotive
Qualification: AEC-Q100
auf Bestellung 845 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
7+3.03 EUR
8+2.69 EUR
10+2.56 EUR
25+2.4 EUR
50+2.3 EUR
100+2.2 EUR
500+2.01 EUR
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TLE493DW2B6A3HTSA1 TLE493D-W2B6_v1.2_4-9-19.pdf
TLE493DW2B6A3HTSA1
Hersteller: Infineon Technologies
Description: SEN HALL EFFECT I2C PG-TSOP6-6-8
Packaging: Cut Tape (CT)
Features: Programmable
Package / Case: SOT-23-6 Thin, TSOT-23-6
Output Type: I2C
Mounting Type: Surface Mount
Axis: X, Y, Z
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 2.8V ~ 3.5V
Technology: Hall Effect
Resolution: 12 b
Sensing Range: ±160mT ~ ±230mT
Current - Supply (Max): 0.13µA
Supplier Device Package: PG-TSOP6-6-8
Grade: Automotive
Qualification: AEC-Q100
auf Bestellung 1782 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
7+3.06 EUR
8+2.71 EUR
10+2.59 EUR
25+2.44 EUR
50+2.33 EUR
100+2.23 EUR
500+2.03 EUR
1000+1.96 EUR
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TLS202B1MBV50HTSA1 Infineon-TLS202B1MB%20V50-DS-v01_00-EN.pdf?fileId=5546d4625e37f35a015e4c2775090ca8
TLS202B1MBV50HTSA1
Hersteller: Infineon Technologies
Description: IC REG LIN 5V 150MA PG-SCT595-5
Packaging: Cut Tape (CT)
Package / Case: 6-SMD (5 Leads), Gull Wing
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 150mA
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 75 µA
Voltage - Input (Max): 18V
Number of Regulators: 1
Supplier Device Package: PG-SCT595-5
Voltage - Output (Min/Fixed): 5V
Control Features: Enable
Part Status: Active
PSRR: 58dB (10kHz)
Voltage Dropout (Max): 0.57V @ 150mA
Protection Features: Over Current, Over Temperature, Short Circuit
Current - Supply (Max): 200 µA
Grade: Automotive
Qualification: AEC-Q100
auf Bestellung 4757 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
11+1.96 EUR
15+1.42 EUR
25+1.27 EUR
100+1.12 EUR
250+1.05 EUR
500+1.01 EUR
1000+0.99 EUR
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TLS805D1LDV50XUMA1 Infineon-TLS805D1LDV50-DS-v01_00-EN.pdf?fileId=5546d46258fc0bc1015969ed79984250
TLS805D1LDV50XUMA1
Hersteller: Infineon Technologies
Description: IC REG LINEAR 5V 50MA PG-TSON-10
Qualification: AEC-Q100
Current - Supply (Max): 16 µA
Protection Features: Over Current, Over Temperature
Voltage Dropout (Max): 0.3V @ 50mA
PSRR: 55dB (100Hz)
Grade: Automotive
Control Features: Enable
Voltage - Output (Min/Fixed): 5V
Supplier Device Package: PG-TSON-10
Number of Regulators: 1
Voltage - Input (Max): 42V
Current - Quiescent (Iq): 11.5 µA
Output Configuration: Positive
Operating Temperature: -40°C ~ 150°C (TJ)
Current - Output: 50mA
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: 10-TFDFN Exposed Pad
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
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AUIR3241STR Infineon-AUIR3241STR-DS-v01_01-EN.pdf?fileId=5546d4625ee5d4cd015eebed858a5b82
AUIR3241STR
Hersteller: Infineon Technologies
Description: IC GATE DRVR HIGH-SIDE 8SO
Part Status: Active
Current - Peak Output (Source, Sink): 350mA, 350mA
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Gate Type: MOSFET (N-Channel)
Number of Drivers: 1
Driven Configuration: High-Side
Qualification: AEC-Q100
Grade: Automotive
DigiKey Programmable: Not Verified
Channel Type: Single
Rise / Fall Time (Typ): 6µs, 6µs
Supplier Device Package: PG-DSO-8-903
Input Type: Non-Inverting
Voltage - Supply: 3V ~ 36V
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
auf Bestellung 5840 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
5+4.88 EUR
10+3.64 EUR
25+3.33 EUR
100+2.99 EUR
250+2.82 EUR
500+2.76 EUR
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AUIRS1170STR Infineon-AUIRS1170S-DS-v02_30-EN.pdf?fileId=5546d46259d9a4bf0159da788eef0681
AUIRS1170STR
Hersteller: Infineon Technologies
Description: IC GATE DRIVER 200V 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Mounting Type: Surface Mount
Voltage - Input: 200V
Operating Temperature: -25°C ~ 125°C (TJ)
Voltage - Supply: 11V ~ 18V
Applications: Secondary-Side Controller
Supplier Device Package: PG-DSO-8-900
Current - Supply: 45 mA
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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BGA5H1BN6E6327XTSA1 Infineon-BGA5H1BN6-DS-v02_02-EN.pdf?fileId=5546d462617643590161b39f4c0935a8
BGA5H1BN6E6327XTSA1
Hersteller: Infineon Technologies
Description: IC RF AMP LTE 2.3GHZ-2.69GHZ
Packaging: Cut Tape (CT)
Package / Case: 6-XFDFN
Mounting Type: Surface Mount
Frequency: 2.3GHz ~ 2.69GHz
RF Type: LTE
Voltage - Supply: 1.5V ~ 3.6V
Gain: 18.1dB
Current - Supply: 8.5mA
Noise Figure: 0.7dB
P1dB: -17dBm
Test Frequency: 2.5GHz
auf Bestellung 4040 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
20+1.05 EUR
24+0.89 EUR
25+0.84 EUR
100+0.77 EUR
250+0.73 EUR
500+0.7 EUR
1000+0.67 EUR
Mindestbestellmenge: 20 Stücke
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IAUT200N08S5N023ATMA1 Infineon-IAUT200N08S5N023-DS-v01_00-EN.pdf?fileId=5546d4626102d35a01611d61e9ce2ab6
IAUT200N08S5N023ATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 80V 200A 8HSOF
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 200A (Tc)
Rds On (Max) @ Id, Vgs: 2.3mOhm @ 100A, 10V
Power Dissipation (Max): 200W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 130µA
Supplier Device Package: PG-HSOF-8-1
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7670 pF @ 40 V
Qualification: AEC-Q101
auf Bestellung 4000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2000+2.75 EUR
4000+2.67 EUR
Mindestbestellmenge: 2000 Stücke
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IAUT240N08S5N019ATMA1 Infineon-IAUT240N08S5N019-DS-v01_00-EN.pdf?fileId=5546d4625debb399015e0506723e791a
IAUT240N08S5N019ATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 80V 240A 8HSOF
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 240A (Tc)
Rds On (Max) @ Id, Vgs: 1.9mOhm @ 100A, 10V
Power Dissipation (Max): 230W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 160µA
Supplier Device Package: PG-HSOF-8-1
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9264 pF @ 40 V
Qualification: AEC-Q101
auf Bestellung 392 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3+9.07 EUR
10+6 EUR
100+4.26 EUR
Mindestbestellmenge: 3 Stücke
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TLE9104SHXUMA1 TLE9104SH_Rev1.31_9-30-20.pdf
TLE9104SHXUMA1
Hersteller: Infineon Technologies
Description: IC POWERTRAIN SWITCH DSO20-88
Features: Slew Rate Controlled, Status Flag
Packaging: Cut Tape (CT)
Package / Case: 20-BFSOP (0.295", 7.50mm Width) Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 4
Interface: SPI
Type: Powertrain Switch
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C
Output Configuration: Low Side
Rds On (Typ): 150mOhm
Input Type: Non-Inverting
Voltage - Load: 50V ~ 60V
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Current - Output (Max): 3A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-DSO-20-88
Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, Reverse Battery, Short Circuit
DigiKey Programmable: Not Verified
auf Bestellung 1384 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3+8.84 EUR
10+6.7 EUR
25+6.16 EUR
100+5.58 EUR
250+5.31 EUR
500+5.14 EUR
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TLS850B0TBV50ATMA1 Infineon-TLS850B0TB V50-DS-v01_10-EN.pdf?fileId=5546d4625fe3678401600cf1035c6d43
TLS850B0TBV50ATMA1
Hersteller: Infineon Technologies
Description: IC REG LIN 5V 500MA PG-TO263-5-1
Packaging: Cut Tape (CT)
Package / Case: TO-263-6, D2PAK (5 Leads + Tab), TO-263BA
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 500mA
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 25 µA
Voltage - Input (Max): 40V
Number of Regulators: 1
Supplier Device Package: PG-TO263-5-1
Voltage - Output (Min/Fixed): 5V
Control Features: Enable
Grade: Automotive
Part Status: Active
PSRR: 60dB (100Hz)
Voltage Dropout (Max): 0.5V @ 250mA
Protection Features: Over Current, Over Temperature
Current - Supply (Max): 33 µA
Qualification: AEC-Q100
auf Bestellung 3258 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
6+4.06 EUR
10+3.01 EUR
25+2.75 EUR
100+2.45 EUR
250+2.32 EUR
500+2.24 EUR
Mindestbestellmenge: 6 Stücke
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IAUT200N08S5N023ATMA1 Infineon-IAUT200N08S5N023-DS-v01_00-EN.pdf?fileId=5546d4626102d35a01611d61e9ce2ab6
IAUT200N08S5N023ATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 80V 200A 8HSOF
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 200A (Tc)
Rds On (Max) @ Id, Vgs: 2.3mOhm @ 100A, 10V
Power Dissipation (Max): 200W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 130µA
Supplier Device Package: PG-HSOF-8-1
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7670 pF @ 40 V
Qualification: AEC-Q101
auf Bestellung 6399 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3+8.27 EUR
10+5.45 EUR
100+3.84 EUR
500+3.27 EUR
Mindestbestellmenge: 3 Stücke
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IAUT165N08S5N029ATMA2 Infineon-IAUT165N08S5N029-DS-v01_00-EN.pdf?fileId=5546d46258fc0bc10158fda2c4bd0569
IAUT165N08S5N029ATMA2
Hersteller: Infineon Technologies
Description: MOSFET N-CH 80V 165A 8HSOF
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 165A (Tc)
Rds On (Max) @ Id, Vgs: 2.9mOhm @ 80A, 10V
Power Dissipation (Max): 167W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 108µA
Supplier Device Package: PG-HSOF-8-1
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6370 pF @ 40 V
Qualification: AEC-Q101
auf Bestellung 3959 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
4+6.64 EUR
10+4.36 EUR
100+3.05 EUR
500+2.69 EUR
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IAUT300N10S5N015ATMA1 Infineon-IAUT300N10S5N015-DS-v01_00-EN.pdf?fileId=5546d4625ee5d4cd015f2469d7203245
IAUT300N10S5N015ATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 100V 300A 8HSOF
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 300A (Tc)
Rds On (Max) @ Id, Vgs: 1.5mOhm @ 100A, 10V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 275µA
Supplier Device Package: PG-HSOF-8-1
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 216 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 16011 pF @ 50 V
Qualification: AEC-Q101
auf Bestellung 224 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2+11.5 EUR
10+7.68 EUR
100+5.52 EUR
Mindestbestellmenge: 2 Stücke
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IAUT260N10S5N019ATMA1 Infineon-IAUT260N10S5N019-DS-v01_00-EN.pdf?fileId=5546d4625ee5d4cd015f2460488e3241
IAUT260N10S5N019ATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 100V 260A 8HSOF
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerSFN
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 11830 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 166 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Part Status: Active
Supplier Device Package: PG-HSOF-8-1
Vgs(th) (Max) @ Id: 3.8V @ 210µA
Power Dissipation (Max): 300W (Tc)
Rds On (Max) @ Id, Vgs: 1.9mOhm @ 100A, 10V
Current - Continuous Drain (Id) @ 25°C: 260A (Tc)
FET Type: N-Channel
Qualification: AEC-Q101
Grade: Automotive
auf Bestellung 1963 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3+10.2 EUR
10+6.79 EUR
100+4.86 EUR
500+4.33 EUR
Mindestbestellmenge: 3 Stücke
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IAUT150N10S5N035ATMA1 Infineon-IAUT150N10S5N035-DS-v01_00-EN.pdf?fileId=5546d4625ee5d4cd015f246034af323f
IAUT150N10S5N035ATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 100V 150A 8HSOF
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 150A (Tc)
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 75A, 10V
Power Dissipation (Max): 166W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 110µA
Supplier Device Package: PG-HSOF-8-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 87 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6110 pF @ 50 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 2683 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
4+6.91 EUR
10+4.52 EUR
100+3.17 EUR
500+2.81 EUR
Mindestbestellmenge: 4 Stücke
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FF800R17KF6CB2NOSA2
Hersteller: Infineon Technologies
Description: IGBT MODULE A-IHM130-1
Packaging: Tray
Produkt ist nicht verfügbar
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TLE49452WAFERX6SA1
Hersteller: Infineon Technologies
Description: MAGNETIC FIELD SWITCH
Packaging: Bulk
Produkt ist nicht verfügbar
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TLE4945CHIPX1SA1
Hersteller: Infineon Technologies
Description: MAGNETIC FIELD SWITCH
Packaging: Bulk
Produkt ist nicht verfügbar
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AUXMIGP4063D
Hersteller: Infineon Technologies
Description: IGBT 600V TO-247 COPAK
Part Status: Obsolete
Packaging: Tube
Produkt ist nicht verfügbar
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MB2198-503-E
Hersteller: Infineon Technologies
Description: TOOL KIT
Part Status: Obsolete
Supplied Contents: Board(s)
Packaging: Bulk
Produkt ist nicht verfügbar
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MB2198-508-E MB2198-508-E__OpManual_9-17-08.pdf
Hersteller: Infineon Technologies
Description: TOOL KIT
Packaging: Bulk
Part Status: Obsolete
Supplied Contents: Board(s)
Produkt ist nicht verfügbar
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AUIRG4PH50S-205
Hersteller: Infineon Technologies
Description: IGBT 1200V 141A TO-247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 33A
Supplier Device Package: TO-247AC
Td (on/off) @ 25°C: -/616ns
Switching Energy: 16mJ (off)
Test Condition: 600V, 33A, 5Ohm, 15V
Gate Charge: 227 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 141 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 99 A
Power - Max: 543 W
Produkt ist nicht verfügbar
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AUXKNG4PH50S-215
Hersteller: Infineon Technologies
Description: IGBT 1200V TO247-3
Part Status: Obsolete
Packaging: Tube
Produkt ist nicht verfügbar
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IKB40N65EF5ATMA1
Hersteller: Infineon Technologies
Description: IGBT TRENCH FS 650V 74A TO263-3
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 83 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 40A
Supplier Device Package: PG-TO263-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 22ns/160ns
Switching Energy: 420µJ (on), 100µJ (off)
Test Condition: 400V, 40A, 15Ohm, 15V
Gate Charge: 95 nC
Part Status: Active
Current - Collector (Ic) (Max): 74 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 160 A
Power - Max: 250 W
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
IKB40N65EH5ATMA1 Infineon-IKB40N65EH5-DS-v02_01-EN.pdf?fileId=5546d462625a528f0162a9221b17693f
IKB40N65EH5ATMA1
Hersteller: Infineon Technologies
Description: IGBT TRENCH FS 650V 74A TO263-3
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 78 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 40A
Supplier Device Package: PG-TO263-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 20ns/157ns
Switching Energy: 1.1mJ (on), 400µJ (off)
Test Condition: 400V, 40A, 15Ohm, 15V
Gate Charge: 95 nC
Part Status: Active
Current - Collector (Ic) (Max): 74 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 160 A
Power - Max: 250 W
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
IKB40N65ES5ATMA1
Hersteller: Infineon Technologies
Description: IGBT TRENCH FS 650V 79A TO263-3
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 73 ns
Vce(on) (Max) @ Vge, Ic: 1.74V @ 15V, 40A
Supplier Device Package: PG-TO263-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 19ns/130ns
Switching Energy: 860µJ (on), 400µJ (off)
Test Condition: 400V, 40A, 10Ohm, 15V
Gate Charge: 95 nC
Part Status: Active
Current - Collector (Ic) (Max): 79 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 160 A
Power - Max: 230 W
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1000+3.17 EUR
Mindestbestellmenge: 1000 Stücke
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IGB50N65S5ATMA1 Infineon-IGB50N65S5-DS-v02_02-EN.pdf?fileId=5546d4625e763904015ec81bbc6f2fec
IGB50N65S5ATMA1
Hersteller: Infineon Technologies
Description: IGBT TRENCH FS 650V 80A TO263-3
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 50A
Supplier Device Package: PG-TO263-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 20ns/139ns
Switching Energy: 1.23mJ (on), 740µJ (off)
Test Condition: 400V, 50A, 8.2Ohm, 15V
Gate Charge: 120 nC
Part Status: Active
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 200 A
Power - Max: 270 W
auf Bestellung 939 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
4+6.78 EUR
10+4.43 EUR
100+3.08 EUR
500+2.52 EUR
Mindestbestellmenge: 4 Stücke
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IGB50N65H5ATMA1
Hersteller: Infineon Technologies
Description: IGBT TRENCH FS 650V 80A TO263-3
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 50A
Supplier Device Package: PG-TO263-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 23ns/173ns
Switching Energy: 1.59mJ (on), 750µJ (off)
Test Condition: 400V, 50A, 12Ohm, 15V
Gate Charge: 120 nC
Part Status: Active
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 150 A
Power - Max: 270 W
auf Bestellung 2429 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
4+6.78 EUR
10+4.43 EUR
100+3.08 EUR
500+2.52 EUR
Mindestbestellmenge: 4 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
IKB40N65EF5ATMA1
Hersteller: Infineon Technologies
Description: IGBT TRENCH FS 650V 74A TO263-3
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 83 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 40A
Supplier Device Package: PG-TO263-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 22ns/160ns
Switching Energy: 420µJ (on), 100µJ (off)
Test Condition: 400V, 40A, 15Ohm, 15V
Gate Charge: 95 nC
Part Status: Active
Current - Collector (Ic) (Max): 74 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 160 A
Power - Max: 250 W
auf Bestellung 886 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2+10.83 EUR
10+7.19 EUR
100+5.11 EUR
500+4.22 EUR
Mindestbestellmenge: 2 Stücke
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IKB40N65EH5ATMA1 Infineon-IKB40N65EH5-DS-v02_01-EN.pdf?fileId=5546d462625a528f0162a9221b17693f
IKB40N65EH5ATMA1
Hersteller: Infineon Technologies
Description: IGBT TRENCH FS 650V 74A TO263-3
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 78 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 40A
Supplier Device Package: PG-TO263-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 20ns/157ns
Switching Energy: 1.1mJ (on), 400µJ (off)
Test Condition: 400V, 40A, 15Ohm, 15V
Gate Charge: 95 nC
Part Status: Active
Current - Collector (Ic) (Max): 74 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 160 A
Power - Max: 250 W
auf Bestellung 435 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3+7.52 EUR
10+4.95 EUR
100+3.49 EUR
Mindestbestellmenge: 3 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
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