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SPD50P03LGXT SPD50P03LGXT Infineon Technologies Description: MOSFET P-CH 30V 50A TO252-5
Input Capacitance (Ciss) (Max) @ Vds: 6880 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 126 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: PG-TO252-5
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 150W (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-5, DPak (4 Leads + Tab), TO-252AD
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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BTS716GNT BTS716GNT Infineon Technologies Description: IC PWR SWITCH N-CHAN 1:1 DSO-20
Part Status: Obsolete
Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, Over Voltage
Supplier Device Package: PG-DSO-20-32
Ratio - Input:Output: 1:1
Current - Output (Max): 2.3A
Voltage - Supply (Vcc/Vdd): Not Required
Input Type: Non-Inverting
Rds On (Typ): 110mOhm
Output Configuration: High Side
Operating Temperature: -40°C ~ 150°C (TJ)
Switch Type: General Purpose
Interface: On/Off
Number of Outputs: 4
Mounting Type: Surface Mount
Output Type: N-Channel
Package / Case: 20-SOIC (0.295", 7.50mm Width)
Features: Status Flag
Packaging: Tape & Reel (TR)
Voltage - Load: 5.5V ~ 40V
Produkt ist nicht verfügbar
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BTS428L2NT BTS428L2NT Infineon Technologies Description: IC PWR SWITCH N-CHAN 1:1 TO252-5
Features: Status Flag
Packaging: Tape & Reel (TR)
Package / Case: TO-252-5, DPak (4 Leads + Tab), TO-252AD
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 50mOhm
Input Type: Non-Inverting
Voltage - Load: 4.75V ~ 41V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 5.8A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-TO252-5-11
Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage
Part Status: Obsolete
Produkt ist nicht verfügbar
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BTS711L1NT BTS711L1NT Infineon Technologies Description: IC PWR SWITCH N-CHAN 1:1 DSO-20
Features: Auto Restart, Status Flag
Packaging: Tape & Reel (TR)
Package / Case: 20-SOIC (0.295", 7.50mm Width)
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 4
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 165mOhm
Input Type: Non-Inverting
Voltage - Load: 5V ~ 34V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 1.7A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-DSO-20-31
Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, Over Voltage
Part Status: Obsolete
Produkt ist nicht verfügbar
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BTS443PNT BTS443PNT Infineon Technologies Description: IC PWR SWITCH N-CHAN 1:1 TO252-5
Packaging: Tape & Reel (TR)
Package / Case: TO-252-5, DPak (4 Leads + Tab), TO-252AD
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 13mOhm
Input Type: Non-Inverting
Voltage - Load: 5V ~ 36V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 21A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-TO252-5-11
Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage
Part Status: Obsolete
Produkt ist nicht verfügbar
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TLE52062SNK Infineon Technologies Description: IC MOTOR DRIVER PAR TO220-7
Packaging: Tube
Part Status: Obsolete
Produkt ist nicht verfügbar
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IPI045N10N3GXK Infineon Technologies Description: MOSFET N-CH 100V 137A TO262-3
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 137A (Tc)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 100A, 10V
Power Dissipation (Max): 214W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 150µA
Supplier Device Package: PG-TO262-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 117 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8410 pF @ 50 V
Produkt ist nicht verfügbar
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IPP023NE7N3G IPP023NE7N3G Infineon Technologies IPI_IPP023NE7N3_G_Rev2.11_9-22-15.pdf Description: MOSFET N-CH 75V 120A TO220-3
Input Capacitance (Ciss) (Max) @ Vds: 14400 pF @ 37.5 V
Gate Charge (Qg) (Max) @ Vgs: 206 nC @ 10 V
Drain to Source Voltage (Vdss): 75 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: PG-TO220-3
Vgs(th) (Max) @ Id: 3.8V @ 273µA
Power Dissipation (Max): 300W (Tc)
Rds On (Max) @ Id, Vgs: 2.3mOhm @ 100A, 10V
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Produkt ist nicht verfügbar
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SPP04N80C3XK SPP04N80C3XK Infineon Technologies Description: MOSFET N-CH 800V 4A TO220-3
Input Capacitance (Ciss) (Max) @ Vds: 570 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Drain to Source Voltage (Vdss): 800 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: PG-TO220-3
Vgs(th) (Max) @ Id: 3.9V @ 240µA
Power Dissipation (Max): 63W (Tc)
Rds On (Max) @ Id, Vgs: 1.3Ohm @ 2.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Produkt ist nicht verfügbar
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SPP06N80C3XK SPP06N80C3XK Infineon Technologies Description: MOSFET N-CH 800V 6A TO220-3
Input Capacitance (Ciss) (Max) @ Vds: 785 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
Drain to Source Voltage (Vdss): 800 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: PG-TO220-3
Vgs(th) (Max) @ Id: 3.9V @ 250µA
Power Dissipation (Max): 83W (Tc)
Rds On (Max) @ Id, Vgs: 900mOhm @ 3.8A, 10V
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Produkt ist nicht verfügbar
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SPP08N80C3XK Infineon Technologies Description: MOSFET N-CH 800V 8A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 650mOhm @ 5.1A, 10V
Power Dissipation (Max): 104W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 470µA
Supplier Device Package: PG-TO220-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 100 V
Produkt ist nicht verfügbar
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IM69D130V01XTSA1 IM69D130V01XTSA1 Infineon Technologies Infineon-IM69D130-DS-v01_00-EN.pdf?fileId=5546d462602a9dc801607a0e46511a2e Description: MIC MEMS DIGITAL PDM OMNI -36DB
Packaging: Tape & Reel (TR)
Output Type: Digital, PDM
Size / Dimension: 0.157" L x 0.118" W (4.00mm x 3.00mm)
Sensitivity: -36dB ±1dB @ 94dB SPL
Shape: Rectangular
Type: MEMS (Silicon)
S/N Ratio: 69dB
Termination: Solder Pads
Direction: Omnidirectional
Port Location: Bottom
Height (Max): 0.051" (1.30mm)
Current - Supply: 1.3 mA
Voltage Range: 1.62 V ~ 3.6 V
Frequency Range: 20 Hz ~ 20 kHz
Produkt ist nicht verfügbar
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IM69D120V01XTSA1 IM69D120V01XTSA1 Infineon Technologies Infineon-IM69D120-DS-v01_00-EN.pdf?fileId=5546d462602a9dc801607a0e41a01a2b Description: MIC MEMS DIGITAL PDM OMNI -26DB
Packaging: Tape & Reel (TR)
Output Type: Digital, PDM
Size / Dimension: 0.157" L x 0.118" W (4.00mm x 3.00mm)
Sensitivity: -26dB ±1dB
Shape: Rectangular
Type: MEMS (Silicon)
S/N Ratio: 69dB
Termination: Solder Pads
Direction: Omnidirectional
Port Location: Bottom
Height (Max): 0.051" (1.30mm)
Part Status: Active
Current - Supply: 1.3 mA
Voltage Range: 1.62 V ~ 3.6 V
Frequency Range: 20 Hz ~ 20 kHz
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IM69D130V01XTSA1 IM69D130V01XTSA1 Infineon Technologies Infineon-IM69D130-DS-v01_00-EN.pdf?fileId=5546d462602a9dc801607a0e46511a2e Description: MIC MEMS DIGITAL PDM OMNI -36DB
Packaging: Cut Tape (CT)
Output Type: Digital, PDM
Size / Dimension: 0.157" L x 0.118" W (4.00mm x 3.00mm)
Sensitivity: -36dB ±1dB @ 94dB SPL
Shape: Rectangular
Type: MEMS (Silicon)
S/N Ratio: 69dB
Termination: Solder Pads
Direction: Omnidirectional
Port Location: Bottom
Height (Max): 0.051" (1.30mm)
Current - Supply: 1.3 mA
Voltage Range: 1.62 V ~ 3.6 V
Frequency Range: 20 Hz ~ 20 kHz
Produkt ist nicht verfügbar
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IM69D120V01XTSA1 IM69D120V01XTSA1 Infineon Technologies Infineon-IM69D120-DS-v01_00-EN.pdf?fileId=5546d462602a9dc801607a0e41a01a2b Description: MIC MEMS DIGITAL PDM OMNI -26DB
Packaging: Cut Tape (CT)
Output Type: Digital, PDM
Size / Dimension: 0.157" L x 0.118" W (4.00mm x 3.00mm)
Sensitivity: -26dB ±1dB
Shape: Rectangular
Type: MEMS (Silicon)
S/N Ratio: 69dB
Termination: Solder Pads
Direction: Omnidirectional
Port Location: Bottom
Height (Max): 0.051" (1.30mm)
Part Status: Active
Current - Supply: 1.3 mA
Voltage Range: 1.62 V ~ 3.6 V
Frequency Range: 20 Hz ~ 20 kHz
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10+3.16 EUR
25+2.87 EUR
50+2.68 EUR
100+2.5 EUR
250+2.28 EUR
500+2.13 EUR
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EVALIM69D130V01FLEXTOBO1 EVALIM69D130V01FLEXTOBO1 Infineon Technologies Infineon-IM69D130-DS-v01_00-EN.pdf?fileId=5546d462602a9dc801607a0e46511a2e Description: EVAL BOARD FOR IM69D130V01XTSA1
Packaging: Bulk
Function: MEMS Omnidirectional Microphones
Type: Audio
Contents: Board(s)
Utilized IC / Part: IM69D130V01XTSA1
Supplied Contents: Board(s)
Secondary Attributes: Digital Output
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EVALIM69D120V01FLEXTOBO1 EVALIM69D120V01FLEXTOBO1 Infineon Technologies IM69D120.pdf Description: EVAL BOARD FOR IM69D120V01XTSA1
Packaging: Bulk
Function: MEMS Omnidirectional Microphones
Type: Audio
Contents: Board(s)
Utilized IC / Part: IM69D120V01XTSA1
Supplied Contents: Board(s)
Secondary Attributes: Digital Output
Part Status: Obsolete
Produkt ist nicht verfügbar
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IFF600B12ME4PB11BPSA1 IFF600B12ME4PB11BPSA1 Infineon Technologies Infineon-IFF600B12ME4P_B11-DS-v03_01-EN.pdf?fileId=5546d462602a9dc801602ab2bc49001e Description: IGBT MOD 1200V 600A 40W MOD
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 600A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 600 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 40 W
Current - Collector Cutoff (Max): 3 mA
Input Capacitance (Cies) @ Vce: 37 nF @ 25 V
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SAK-XC2267M-104F80L AB Infineon Technologies Description: IC MCU 16BIT 100LQFP
Packaging: Tape & Reel (TR)
Package / Case: 100-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 80MHz
Program Memory Size: 832KB (832K x 8)
RAM Size: 50K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: C166SV2
Data Converters: A/D 16x10b
Core Size: 16/32-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Connectivity: CANbus, EBI/EMI, I²C, LINbus, SPI, SSC, UART/USART, USI
Peripherals: I²S, POR, PWM, WDT
Supplier Device Package: PG-LQFP-100-8
Part Status: Obsolete
Number of I/O: 76
DigiKey Programmable: Not Verified
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XC2060M104F80LABKXQMA1 Infineon Technologies Description: IC MCU 16BIT 100LQFP
Packaging: Tape & Reel (TR)
Part Status: Obsolete
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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XC2336A72F80LAAFXUMA1 XC2336A72F80LAAFXUMA1 Infineon Technologies XC2336A_v2.1_2011-07.pdf Description: IC MCU 16BIT 64LQFP
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XC2336A72F80LAAHXUMA1 XC2336A72F80LAAHXUMA1 Infineon Technologies XC2336A_v2.1_2011-07.pdf Description: IC MCU 16BIT 64LQFP
Packaging: Tape & Reel (TR)
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Speed: 80MHz
Program Memory Size: 576KB (576K x 8)
RAM Size: 50K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: C166SV2
Data Converters: A/D 9x10b
Core Size: 16/32-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Connectivity: CANbus, EBI/EMI, I²C, LINbus, SPI, SSC, UART/USART, USI
Peripherals: I²S, POR, PWM, WDT
Supplier Device Package: PG-LQFP-64-13
Part Status: Obsolete
Number of I/O: 40
DigiKey Programmable: Not Verified
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XC2368E136F128LAAKXUMA1 Infineon Technologies xc2368e_ds_V1.3_2014_06.pdf?fileId=db3a304333227b5e0133405401bb1cde Description: IC MCU 16BIT 100LQFP
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XC2387E104F128LAAKFUMA1 XC2387E104F128LAAKFUMA1 Infineon Technologies XC2385,87A.pdf Description: IC MCU 16BIT 144LQFP
Packaging: Tape & Reel (TR)
Package / Case: 144-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 128MHz
Program Memory Size: 832KB (832K x 8)
RAM Size: 98K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
Core Processor: C166SV2
Data Converters: A/D 24x12b
Core Size: 16/32-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Connectivity: CANbus, EBI/EMI, FlexRay, I²C, LINbus, SPI, UART/USART
Peripherals: I²S, POR, PWM, WDT
Supplier Device Package: PG-LQFP-144-4
Part Status: Obsolete
Number of I/O: 118
Produkt ist nicht verfügbar
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4347153 Infineon Technologies Description: IC FLASH
DigiKey Programmable: Not Verified
Packaging: Bulk
Produkt ist nicht verfügbar
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593995-001-00 Infineon Technologies Description: IC FLASH
Packaging: Bulk
Part Status: Obsolete
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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593995-002-00 Infineon Technologies Description: IC FLASH
Packaging: Bulk
Part Status: Obsolete
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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593995-002-38 Infineon Technologies Description: IC FLASH
Packaging: Bulk
Part Status: Obsolete
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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593995-003-38 Infineon Technologies Description: IC FLASH
Packaging: Bulk
Part Status: Obsolete
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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593995-005-69 Infineon Technologies Description: IC FLASH
Packaging: Bulk
Part Status: Obsolete
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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CG7380AM Infineon Technologies Description: IC FLASH 40QFN 1MM
Packaging: Bulk
Part Status: Obsolete
DigiKey Programmable: Not Verified
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FM25640B-G2 FM25640B-G2 Infineon Technologies Infineon-FM25640B_64-Kbit_(8_K_8)_Serial_(SPI)_F-RAM-DataSheet-v10_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebdf9d63113&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Description: IC FRAM 64KBIT SPI 20MHZ 8SOIC
DigiKey Programmable: Not Verified
Memory Organization: 8K x 8
Memory Interface: SPI
Supplier Device Package: 8-SOIC
Memory Format: FRAM
Clock Frequency: 20 MHz
Technology: FRAM (Ferroelectric RAM)
Voltage - Supply: 4.5V ~ 5.5V
Operating Temperature: -40°C ~ 85°C (TA)
Memory Type: Non-Volatile
Memory Size: 64Kbit
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tube
Produkt ist nicht verfügbar
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CY8C4248FNI-BL583T CY8C4248FNI-BL583T Infineon Technologies ?utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Description: IC MCU 32BIT 256KB FLASH 76WLCSP
DigiKey Programmable: Not Verified
Number of I/O: 36
Part Status: Active
Supplier Device Package: 76-WLCSP (4.04×3.87)
Peripherals: Bluetooth, Brown-out Detect/Reset, Cap Sense, DMA LCD, LVD, POR, PWM, SmartCard, SmartSense, WDT
Connectivity: I²C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Core Size: 32-Bit Single-Core
Data Converters: A/D 16x12b SAR; D/A 2xIDAC
Core Processor: ARM® Cortex®-M0
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 85°C (TA)
RAM Size: 32K x 8
Program Memory Size: 256KB (256K x 8)
Speed: 48MHz
Mounting Type: Surface Mount
Package / Case: 76-UFBGA, WLCSP
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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SPP80N06S08NK SPP80N06S08NK Infineon Technologies Description: MOSFET N-CH 55V 80A TO220-3
Drain to Source Voltage (Vdss): 55 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: PG-TO220-3
Vgs(th) (Max) @ Id: 4V @ 240µA
Power Dissipation (Max): 300W (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 80A, 10V
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Package / Case: TO-220-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 3660 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 187 nC @ 10 V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Produkt ist nicht verfügbar
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TLE42712SNKSA1 TLE42712SNKSA1 Infineon Technologies TLE4271-2.pdf Description: IC REG LIN 5V 550MA TO220-7-12
Control Features: Reset, Watchdog
Voltage - Output (Min/Fixed): 5V
Supplier Device Package: PG-TO220-7-12
Number of Regulators: 1
Voltage - Input (Max): 40V
Current - Quiescent (Iq): 6 µA
Output Configuration: Positive
Operating Temperature: -40°C ~ 150°C (TJ)
Current - Output: 550mA
Mounting Type: Through Hole
Output Type: Fixed
Package / Case: TO-220-7
Packaging: Tube
Current - Supply (Max): 90 mA
Protection Features: Over Current, Over Temperature, Over Voltage, Reverse Polarity, Short Circuit
Voltage Dropout (Max): 0.7V @ 550mA
PSRR: 54dB (100Hz)
Part Status: Obsolete
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D475N32BS20XPSA1 Infineon Technologies Description: MOD DIODE RECTIFIER
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DD25DS2016KKHPSA1 DD25DS2016KKHPSA1 Infineon Technologies Description: MOD DIODE THYRISTOR
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T860N32TOFS01XPSA1 Infineon Technologies Description: MOD DIODE THYRISTOR
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IKA10N65ET6XKSA2 IKA10N65ET6XKSA2 Infineon Technologies Infineon-IKA10N65ET6-DS-v02_02-EN.pdf?fileId=5546d4625e763904015e844d55a5527e Description: IGBT TRENCH FS 650V 15A TO220-3
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 51 ns
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 8.5A
Supplier Device Package: PG-TO220-3-FP
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 30ns/106ns
Switching Energy: 200µJ (on), 70µJ (off)
Test Condition: 400V, 8.5A, 47Ohm, 15V
Gate Charge: 27 nC
Part Status: Not For New Designs
Current - Collector (Ic) (Max): 15 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 42.5 A
Power - Max: 40 W
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IRGS4B60KPBF IRGS4B60KPBF Infineon Technologies Description: IGBT 600V D2PAK-3
Power - Max: 63 W
Current - Collector Pulsed (Icm): 24 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 12 A
Gate Charge: 12 nC
Test Condition: 400V, 4A, 100Ohm, 15V
Switching Energy: 73µJ (on), 47µJ (off)
Td (on/off) @ 25°C: 22ns/100ns
IGBT Type: NPT
Supplier Device Package: D2PAK
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 4A
Input Type: Standard
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tube
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IPW65R045C7300XKSA1 IPW65R045C7300XKSA1 Infineon Technologies Description: MOSFET N-CH 650V 46A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 46A (Tc)
Rds On (Max) @ Id, Vgs: 45mOhm @ 24.9A, 10V
Power Dissipation (Max): 227W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1.25mA
Supplier Device Package: PG-TO247-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 93 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4340 pF @ 400 V
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BAT1502ELSE6327XTSA1 BAT1502ELSE6327XTSA1 Infineon Technologies Infineon-BAT15-02ELS-DS-v01_00-EN.pdf?fileId=5546d46265f064ff01663895e8f04e77 Description: RF DIODE PG-TSSLP-2-3
Packaging: Tape & Reel (TR)
Package / Case: 0201 (0603 Metric)
Supplier Device Package: PG-TSSLP-2-3
Part Status: Not For New Designs
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BFR740EL3E6829XTSA1 BFR740EL3E6829XTSA1 Infineon Technologies Infineon-BFR740EL3-DS-v01_00-EN.pdf?fileId=5546d46265f064ff01663896f5f94ec8 Description: RF TRANS NPN 42GHZ PG-TSLP-3-10
Packaging: Tape & Reel (TR)
Package / Case: 3-XFDFN
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 11dB
Power - Max: 160mW
Current - Collector (Ic) (Max): 40mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 25mA, 3V
Frequency - Transition: 42GHz
Noise Figure (dB Typ @ f): 1.5dB @ 12GHz
Supplier Device Package: PG-TSLP-3-10
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BGS13S4N9E6327XTSA1 BGS13S4N9E6327XTSA1 Infineon Technologies Infineon-BGS13S4N9-DS-v01_00-EN.pdf?fileId=5546d46262475fbe016248809d333d02 Description: IC RF SWITCH SP3T TSNP9-3
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BSC010N04LSTATMA1 BSC010N04LSTATMA1 Infineon Technologies infineon-bsc010n04lst-datasheet-en.pdf Description: MOSFET N-CH 40V 39A/100A TDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 39A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 1mOhm @ 50A, 10V
Power Dissipation (Max): 3W (Ta), 167W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TDSON-8 FL
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 133 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9520 pF @ 20 V
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BSC011N03LSTATMA1 BSC011N03LSTATMA1 Infineon Technologies Infineon-BSC011N03LST-DS-v02_01-EN.pdf?fileId=5546d462602a9dc801605467a7822cad Description: MOSFET N-CH 30V 39A/100A TDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 39A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 1.1mOhm @ 30A, 10V
Power Dissipation (Max): 3W (Ta), 115W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TDSON-8 FL
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 6300 pF @ 15 V
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BSC014N04LSTATMA1 BSC014N04LSTATMA1 Infineon Technologies Infineon-BSC014N04LST-DS-v02_01-EN.pdf?fileId=5546d462602a9dc80160546e5cba2cb8 Description: MOSFET N-CH 40V 33A/100A TDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 33A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 1.4mOhm @ 50A, 10V
Power Dissipation (Max): 3W (Ta), 115W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TDSON-8 FL
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 85 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6020 pF @ 20 V
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BSC014N06NSTATMA1 BSC014N06NSTATMA1 Infineon Technologies Infineon-BSC014N06NST-DS-v02_00-EN.pdf?fileId=5546d462602a9dc80160546e79762cbe Description: MOSFET N-CH 60V 100A TDSON-8 FL
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 1.45mOhm @ 50A, 10V
Power Dissipation (Max): 3W (Ta), 188W (Tc)
Vgs(th) (Max) @ Id: 3.3V @ 120µA
Supplier Device Package: PG-TDSON-8 FL
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 104 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8125 pF @ 30 V
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BSC016N06NSTATMA1 BSC016N06NSTATMA1 Infineon Technologies Infineon-BSC016N06NST-DS-v02_00-EN.pdf?fileId=5546d462602a9dc801605455cb0b2c6e Description: MOSFET N-CH 60V 31A/100A TDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 31A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 1.6mOhm @ 50A, 10V
Power Dissipation (Max): 3W (Ta), 167W (Tc)
Vgs(th) (Max) @ Id: 3.3V @ 95µA
Supplier Device Package: PG-TDSON-8 FL
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6500 pF @ 30 V
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BSC028N06NSTATMA1 BSC028N06NSTATMA1 Infineon Technologies Infineon-BSC028N06NST-DS-v02_01-EN.pdf?fileId=5546d462602a9dc80160546e6c1d2cbb Description: MOSFET N-CH 60V 24A/100A TDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 2.8mOhm @ 50A, 10V
Power Dissipation (Max): 3W (Ta), 100W (Tc)
Vgs(th) (Max) @ Id: 3.3V @ 50µA
Supplier Device Package: PG-TDSON-8-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3375 pF @ 30 V
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BSC097N06NSTATMA1 BSC097N06NSTATMA1 Infineon Technologies Infineon-BSC097N06NST-DS-v02_00-EN.pdf?fileId=5546d462602a9dc80160546e889d2cc1 Description: MOSFET N-CH 60V 13A/48A TDSON
Input Capacitance (Ciss) (Max) @ Vds: 1075 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Part Status: Not For New Designs
Supplier Device Package: PG-TDSON-8-1
Vgs(th) (Max) @ Id: 3.3V @ 14µA
Power Dissipation (Max): 3W (Ta), 43W (Tc)
Rds On (Max) @ Id, Vgs: 9.7mOhm @ 40A, 10V
Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 48A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
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IAUT150N10S5N035ATMA1 IAUT150N10S5N035ATMA1 Infineon Technologies Infineon-IAUT150N10S5N035-DS-v01_00-EN.pdf?fileId=5546d4625ee5d4cd015f246034af323f Description: MOSFET N-CH 100V 150A 8HSOF
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 150A (Tc)
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 75A, 10V
Power Dissipation (Max): 166W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 110µA
Supplier Device Package: PG-HSOF-8-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 87 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6110 pF @ 50 V
Grade: Automotive
Qualification: AEC-Q101
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IAUT260N10S5N019ATMA1 IAUT260N10S5N019ATMA1 Infineon Technologies Infineon-IAUT260N10S5N019-DS-v01_00-EN.pdf?fileId=5546d4625ee5d4cd015f2460488e3241 Description: MOSFET N-CH 100V 260A 8HSOF
Input Capacitance (Ciss) (Max) @ Vds: 11830 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 166 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Part Status: Active
Supplier Device Package: PG-HSOF-8-1
Vgs(th) (Max) @ Id: 3.8V @ 210µA
Power Dissipation (Max): 300W (Tc)
Rds On (Max) @ Id, Vgs: 1.9mOhm @ 100A, 10V
Current - Continuous Drain (Id) @ 25°C: 260A (Tc)
FET Type: N-Channel
Qualification: AEC-Q101
Grade: Automotive
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerSFN
Packaging: Tape & Reel (TR)
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IAUT300N10S5N015ATMA1 IAUT300N10S5N015ATMA1 Infineon Technologies Infineon-IAUT300N10S5N015-DS-v01_00-EN.pdf?fileId=5546d4625ee5d4cd015f2469d7203245 Description: MOSFET N-CH 100V 300A 8HSOF
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 16011 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 216 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Part Status: Active
Supplier Device Package: PG-HSOF-8-1
Vgs(th) (Max) @ Id: 3.8V @ 275µA
Rds On (Max) @ Id, Vgs: 1.5mOhm @ 100A, 10V
Current - Continuous Drain (Id) @ 25°C: 300A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerSFN
Packaging: Tape & Reel (TR)
Power Dissipation (Max): 375W (Tc)
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ICE5AR0680AGXUMA1 ICE5AR0680AGXUMA1 Infineon Technologies Infineon-ICE5xRxxxxAG-DS-v02_00-EN.pdf?fileId=5546d462602a9dc801607d6123c745a6 Description: IC OFFLINE SWITCH FLYBACK 12DSO
Power (Watts): 40 W
Part Status: Active
Control Features: EN, Soft Start, Sync
Fault Protection: Current Limiting, Open Loop, Over Load, Over Temperature, Over Voltage
Supplier Device Package: PG-DSO-12-21
Voltage - Supply (Vcc/Vdd): 10V ~ 25.5V
Topology: Flyback
Output Isolation: Non-Isolated
Voltage - Breakdown: 800V
Internal Switch(s): Yes
Frequency - Switching: 100kHz
Duty Cycle: 75%
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 16-SOIC (0.154", 3.90mm Width), 12 Leads
Packaging: Tape & Reel (TR)
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ICE5AR4770AGXUMA1 ICE5AR4770AGXUMA1 Infineon Technologies Infineon-ICE5xRxxxxAG-DS-v02_00-EN.pdf?fileId=5546d462602a9dc801607d6123c745a6 Description: IC OFFLINE SWITCH FLYBACK 12DSO
Power (Watts): 15 W
Part Status: Active
Control Features: EN, Soft Start, Sync
Fault Protection: Current Limiting, Open Loop, Over Load, Over Temperature, Over Voltage
Supplier Device Package: PG-DSO-12-21
Voltage - Supply (Vcc/Vdd): 10V ~ 25.5V
Topology: Flyback
Output Isolation: Non-Isolated
Voltage - Breakdown: 700V
Internal Switch(s): Yes
Frequency - Switching: 100kHz
Duty Cycle: 75%
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 16-SOIC (0.154", 3.90mm Width), 12 Leads
Packaging: Tape & Reel (TR)
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ICE5ASAGXUMA1 ICE5ASAGXUMA1 Infineon Technologies INFN-S-A0004583216-1.pdf?t.download=true&u=5oefqw Description: IC OFFLINE SWITCH FLYBACK 8DSO
Power (Watts): 60 W
Part Status: Active
Control Features: EN, Soft Start, Sync
Voltage - Start Up: 16 V
Fault Protection: Current Limiting, Open Loop, Over Load, Over Temperature, Over Voltage
Supplier Device Package: PG-DSO-8
Voltage - Supply (Vcc/Vdd): 10V ~ 25.5V
Internal Switch(s): Yes
Frequency - Switching: 100kHz
Duty Cycle: 75%
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Topology: Flyback
Output Isolation: Non-Isolated
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ICE5GR1680AGXUMA1 ICE5GR1680AGXUMA1 Infineon Technologies Infineon-ICE5xRxxxxAG-DS-v02_00-EN.pdf?fileId=5546d462602a9dc801607d6123c745a6 Description: IC OFFLINE SWITCH FLYBACK 12DSO
Power (Watts): 27 W
Part Status: Active
Control Features: EN, Soft Start, Sync
Fault Protection: Current Limiting, Open Loop, Over Load, Over Temperature, Over Voltage
Supplier Device Package: PG-DSO-12-21
Voltage - Supply (Vcc/Vdd): 10V ~ 25.5V
Topology: Flyback
Output Isolation: Non-Isolated
Voltage - Breakdown: 800V
Internal Switch(s): Yes
Frequency - Switching: 125kHz
Duty Cycle: 75%
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 16-SOIC (0.154", 3.90mm Width), 12 Leads
Packaging: Tape & Reel (TR)
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IDFW40E65D1EXKSA1 IDFW40E65D1EXKSA1 Infineon Technologies Infineon-IDFW40E65D1E-DS-v02_02-EN.pdf?fileId=5546d462602a9dc8016034fef5752df5 Description: DIODE GP 650V 42A TO247-3-AI
Current - Reverse Leakage @ Vr: 40 µA @ 650 V
Voltage - Forward (Vf) (Max) @ If: 2.1 V @ 40 A
Voltage - DC Reverse (Vr) (Max): 650 V
Part Status: Active
Operating Temperature - Junction: -40°C ~ 175°C
Supplier Device Package: PG-TO247-3-AI
Current - Average Rectified (Io): 42A
Technology: Standard
Reverse Recovery Time (trr): 76 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
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IKFW40N60DH3EXKSA1 IKFW40N60DH3EXKSA1 Infineon Technologies Infineon-IKFW40N60DH3E-DS-v02_01-EN.pdf?fileId=5546d462602a9dc8016034ff098b2df8 Description: IGBT TRENCH FS 600V 34A TO-247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 72 ns
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 30A
Supplier Device Package: PG-TO247-3-AI
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 18ns/144ns
Switching Energy: 870µJ (on), 360µJ (off)
Test Condition: 400V, 30A, 10Ohm, 15V
Gate Charge: 107 nC
Part Status: Active
Current - Collector (Ic) (Max): 34 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 90 A
Power - Max: 111 W
auf Bestellung 47 Stücke:
Lieferzeit 10-14 Tag (e)
2+11.09 EUR
30+6.28 EUR
Mindestbestellmenge: 2 Stücke
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SPD50P03LGXT
SPD50P03LGXT
Hersteller: Infineon Technologies
Description: MOSFET P-CH 30V 50A TO252-5
Input Capacitance (Ciss) (Max) @ Vds: 6880 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 126 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: PG-TO252-5
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 150W (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-5, DPak (4 Leads + Tab), TO-252AD
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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BTS716GNT
BTS716GNT
Hersteller: Infineon Technologies
Description: IC PWR SWITCH N-CHAN 1:1 DSO-20
Part Status: Obsolete
Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, Over Voltage
Supplier Device Package: PG-DSO-20-32
Ratio - Input:Output: 1:1
Current - Output (Max): 2.3A
Voltage - Supply (Vcc/Vdd): Not Required
Input Type: Non-Inverting
Rds On (Typ): 110mOhm
Output Configuration: High Side
Operating Temperature: -40°C ~ 150°C (TJ)
Switch Type: General Purpose
Interface: On/Off
Number of Outputs: 4
Mounting Type: Surface Mount
Output Type: N-Channel
Package / Case: 20-SOIC (0.295", 7.50mm Width)
Features: Status Flag
Packaging: Tape & Reel (TR)
Voltage - Load: 5.5V ~ 40V
Produkt ist nicht verfügbar
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BTS428L2NT
BTS428L2NT
Hersteller: Infineon Technologies
Description: IC PWR SWITCH N-CHAN 1:1 TO252-5
Features: Status Flag
Packaging: Tape & Reel (TR)
Package / Case: TO-252-5, DPak (4 Leads + Tab), TO-252AD
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 50mOhm
Input Type: Non-Inverting
Voltage - Load: 4.75V ~ 41V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 5.8A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-TO252-5-11
Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage
Part Status: Obsolete
Produkt ist nicht verfügbar
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BTS711L1NT
BTS711L1NT
Hersteller: Infineon Technologies
Description: IC PWR SWITCH N-CHAN 1:1 DSO-20
Features: Auto Restart, Status Flag
Packaging: Tape & Reel (TR)
Package / Case: 20-SOIC (0.295", 7.50mm Width)
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 4
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 165mOhm
Input Type: Non-Inverting
Voltage - Load: 5V ~ 34V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 1.7A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-DSO-20-31
Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, Over Voltage
Part Status: Obsolete
Produkt ist nicht verfügbar
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BTS443PNT
BTS443PNT
Hersteller: Infineon Technologies
Description: IC PWR SWITCH N-CHAN 1:1 TO252-5
Packaging: Tape & Reel (TR)
Package / Case: TO-252-5, DPak (4 Leads + Tab), TO-252AD
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 13mOhm
Input Type: Non-Inverting
Voltage - Load: 5V ~ 36V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 21A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-TO252-5-11
Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage
Part Status: Obsolete
Produkt ist nicht verfügbar
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TLE52062SNK
Hersteller: Infineon Technologies
Description: IC MOTOR DRIVER PAR TO220-7
Packaging: Tube
Part Status: Obsolete
Produkt ist nicht verfügbar
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IPI045N10N3GXK
Hersteller: Infineon Technologies
Description: MOSFET N-CH 100V 137A TO262-3
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 137A (Tc)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 100A, 10V
Power Dissipation (Max): 214W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 150µA
Supplier Device Package: PG-TO262-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 117 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8410 pF @ 50 V
Produkt ist nicht verfügbar
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IPP023NE7N3G IPI_IPP023NE7N3_G_Rev2.11_9-22-15.pdf
IPP023NE7N3G
Hersteller: Infineon Technologies
Description: MOSFET N-CH 75V 120A TO220-3
Input Capacitance (Ciss) (Max) @ Vds: 14400 pF @ 37.5 V
Gate Charge (Qg) (Max) @ Vgs: 206 nC @ 10 V
Drain to Source Voltage (Vdss): 75 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: PG-TO220-3
Vgs(th) (Max) @ Id: 3.8V @ 273µA
Power Dissipation (Max): 300W (Tc)
Rds On (Max) @ Id, Vgs: 2.3mOhm @ 100A, 10V
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Produkt ist nicht verfügbar
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SPP04N80C3XK
SPP04N80C3XK
Hersteller: Infineon Technologies
Description: MOSFET N-CH 800V 4A TO220-3
Input Capacitance (Ciss) (Max) @ Vds: 570 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Drain to Source Voltage (Vdss): 800 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: PG-TO220-3
Vgs(th) (Max) @ Id: 3.9V @ 240µA
Power Dissipation (Max): 63W (Tc)
Rds On (Max) @ Id, Vgs: 1.3Ohm @ 2.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Produkt ist nicht verfügbar
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SPP06N80C3XK
SPP06N80C3XK
Hersteller: Infineon Technologies
Description: MOSFET N-CH 800V 6A TO220-3
Input Capacitance (Ciss) (Max) @ Vds: 785 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
Drain to Source Voltage (Vdss): 800 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: PG-TO220-3
Vgs(th) (Max) @ Id: 3.9V @ 250µA
Power Dissipation (Max): 83W (Tc)
Rds On (Max) @ Id, Vgs: 900mOhm @ 3.8A, 10V
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Produkt ist nicht verfügbar
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SPP08N80C3XK
Hersteller: Infineon Technologies
Description: MOSFET N-CH 800V 8A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 650mOhm @ 5.1A, 10V
Power Dissipation (Max): 104W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 470µA
Supplier Device Package: PG-TO220-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 100 V
Produkt ist nicht verfügbar
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IM69D130V01XTSA1 Infineon-IM69D130-DS-v01_00-EN.pdf?fileId=5546d462602a9dc801607a0e46511a2e
IM69D130V01XTSA1
Hersteller: Infineon Technologies
Description: MIC MEMS DIGITAL PDM OMNI -36DB
Packaging: Tape & Reel (TR)
Output Type: Digital, PDM
Size / Dimension: 0.157" L x 0.118" W (4.00mm x 3.00mm)
Sensitivity: -36dB ±1dB @ 94dB SPL
Shape: Rectangular
Type: MEMS (Silicon)
S/N Ratio: 69dB
Termination: Solder Pads
Direction: Omnidirectional
Port Location: Bottom
Height (Max): 0.051" (1.30mm)
Current - Supply: 1.3 mA
Voltage Range: 1.62 V ~ 3.6 V
Frequency Range: 20 Hz ~ 20 kHz
Produkt ist nicht verfügbar
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IM69D120V01XTSA1 Infineon-IM69D120-DS-v01_00-EN.pdf?fileId=5546d462602a9dc801607a0e41a01a2b
IM69D120V01XTSA1
Hersteller: Infineon Technologies
Description: MIC MEMS DIGITAL PDM OMNI -26DB
Packaging: Tape & Reel (TR)
Output Type: Digital, PDM
Size / Dimension: 0.157" L x 0.118" W (4.00mm x 3.00mm)
Sensitivity: -26dB ±1dB
Shape: Rectangular
Type: MEMS (Silicon)
S/N Ratio: 69dB
Termination: Solder Pads
Direction: Omnidirectional
Port Location: Bottom
Height (Max): 0.051" (1.30mm)
Part Status: Active
Current - Supply: 1.3 mA
Voltage Range: 1.62 V ~ 3.6 V
Frequency Range: 20 Hz ~ 20 kHz
auf Bestellung 1000 Stücke:
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AnzahlPreis
1000+2.13 EUR
Mindestbestellmenge: 1000 Stücke
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IM69D130V01XTSA1 Infineon-IM69D130-DS-v01_00-EN.pdf?fileId=5546d462602a9dc801607a0e46511a2e
IM69D130V01XTSA1
Hersteller: Infineon Technologies
Description: MIC MEMS DIGITAL PDM OMNI -36DB
Packaging: Cut Tape (CT)
Output Type: Digital, PDM
Size / Dimension: 0.157" L x 0.118" W (4.00mm x 3.00mm)
Sensitivity: -36dB ±1dB @ 94dB SPL
Shape: Rectangular
Type: MEMS (Silicon)
S/N Ratio: 69dB
Termination: Solder Pads
Direction: Omnidirectional
Port Location: Bottom
Height (Max): 0.051" (1.30mm)
Current - Supply: 1.3 mA
Voltage Range: 1.62 V ~ 3.6 V
Frequency Range: 20 Hz ~ 20 kHz
Produkt ist nicht verfügbar
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IM69D120V01XTSA1 Infineon-IM69D120-DS-v01_00-EN.pdf?fileId=5546d462602a9dc801607a0e41a01a2b
IM69D120V01XTSA1
Hersteller: Infineon Technologies
Description: MIC MEMS DIGITAL PDM OMNI -26DB
Packaging: Cut Tape (CT)
Output Type: Digital, PDM
Size / Dimension: 0.157" L x 0.118" W (4.00mm x 3.00mm)
Sensitivity: -26dB ±1dB
Shape: Rectangular
Type: MEMS (Silicon)
S/N Ratio: 69dB
Termination: Solder Pads
Direction: Omnidirectional
Port Location: Bottom
Height (Max): 0.051" (1.30mm)
Part Status: Active
Current - Supply: 1.3 mA
Voltage Range: 1.62 V ~ 3.6 V
Frequency Range: 20 Hz ~ 20 kHz
auf Bestellung 1555 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
5+4.03 EUR
10+3.16 EUR
25+2.87 EUR
50+2.68 EUR
100+2.5 EUR
250+2.28 EUR
500+2.13 EUR
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EVALIM69D130V01FLEXTOBO1 Infineon-IM69D130-DS-v01_00-EN.pdf?fileId=5546d462602a9dc801607a0e46511a2e
EVALIM69D130V01FLEXTOBO1
Hersteller: Infineon Technologies
Description: EVAL BOARD FOR IM69D130V01XTSA1
Packaging: Bulk
Function: MEMS Omnidirectional Microphones
Type: Audio
Contents: Board(s)
Utilized IC / Part: IM69D130V01XTSA1
Supplied Contents: Board(s)
Secondary Attributes: Digital Output
Produkt ist nicht verfügbar
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EVALIM69D120V01FLEXTOBO1 IM69D120.pdf
EVALIM69D120V01FLEXTOBO1
Hersteller: Infineon Technologies
Description: EVAL BOARD FOR IM69D120V01XTSA1
Packaging: Bulk
Function: MEMS Omnidirectional Microphones
Type: Audio
Contents: Board(s)
Utilized IC / Part: IM69D120V01XTSA1
Supplied Contents: Board(s)
Secondary Attributes: Digital Output
Part Status: Obsolete
Produkt ist nicht verfügbar
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IFF600B12ME4PB11BPSA1 Infineon-IFF600B12ME4P_B11-DS-v03_01-EN.pdf?fileId=5546d462602a9dc801602ab2bc49001e
IFF600B12ME4PB11BPSA1
Hersteller: Infineon Technologies
Description: IGBT MOD 1200V 600A 40W MOD
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 600A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 600 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 40 W
Current - Collector Cutoff (Max): 3 mA
Input Capacitance (Cies) @ Vce: 37 nF @ 25 V
auf Bestellung 2 Stücke:
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AnzahlPreis
1+290.91 EUR
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SAK-XC2267M-104F80L AB
Hersteller: Infineon Technologies
Description: IC MCU 16BIT 100LQFP
Packaging: Tape & Reel (TR)
Package / Case: 100-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 80MHz
Program Memory Size: 832KB (832K x 8)
RAM Size: 50K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: C166SV2
Data Converters: A/D 16x10b
Core Size: 16/32-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Connectivity: CANbus, EBI/EMI, I²C, LINbus, SPI, SSC, UART/USART, USI
Peripherals: I²S, POR, PWM, WDT
Supplier Device Package: PG-LQFP-100-8
Part Status: Obsolete
Number of I/O: 76
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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XC2060M104F80LABKXQMA1
Hersteller: Infineon Technologies
Description: IC MCU 16BIT 100LQFP
Packaging: Tape & Reel (TR)
Part Status: Obsolete
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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XC2336A72F80LAAFXUMA1 XC2336A_v2.1_2011-07.pdf
XC2336A72F80LAAFXUMA1
Hersteller: Infineon Technologies
Description: IC MCU 16BIT 64LQFP
Produkt ist nicht verfügbar
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XC2336A72F80LAAHXUMA1 XC2336A_v2.1_2011-07.pdf
XC2336A72F80LAAHXUMA1
Hersteller: Infineon Technologies
Description: IC MCU 16BIT 64LQFP
Packaging: Tape & Reel (TR)
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Speed: 80MHz
Program Memory Size: 576KB (576K x 8)
RAM Size: 50K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: C166SV2
Data Converters: A/D 9x10b
Core Size: 16/32-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Connectivity: CANbus, EBI/EMI, I²C, LINbus, SPI, SSC, UART/USART, USI
Peripherals: I²S, POR, PWM, WDT
Supplier Device Package: PG-LQFP-64-13
Part Status: Obsolete
Number of I/O: 40
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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XC2368E136F128LAAKXUMA1 xc2368e_ds_V1.3_2014_06.pdf?fileId=db3a304333227b5e0133405401bb1cde
Hersteller: Infineon Technologies
Description: IC MCU 16BIT 100LQFP
Produkt ist nicht verfügbar
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XC2387E104F128LAAKFUMA1 XC2385,87A.pdf
XC2387E104F128LAAKFUMA1
Hersteller: Infineon Technologies
Description: IC MCU 16BIT 144LQFP
Packaging: Tape & Reel (TR)
Package / Case: 144-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 128MHz
Program Memory Size: 832KB (832K x 8)
RAM Size: 98K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
Core Processor: C166SV2
Data Converters: A/D 24x12b
Core Size: 16/32-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Connectivity: CANbus, EBI/EMI, FlexRay, I²C, LINbus, SPI, UART/USART
Peripherals: I²S, POR, PWM, WDT
Supplier Device Package: PG-LQFP-144-4
Part Status: Obsolete
Number of I/O: 118
Produkt ist nicht verfügbar
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4347153
Hersteller: Infineon Technologies
Description: IC FLASH
DigiKey Programmable: Not Verified
Packaging: Bulk
Produkt ist nicht verfügbar
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593995-001-00
Hersteller: Infineon Technologies
Description: IC FLASH
Packaging: Bulk
Part Status: Obsolete
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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593995-002-00
Hersteller: Infineon Technologies
Description: IC FLASH
Packaging: Bulk
Part Status: Obsolete
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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593995-002-38
Hersteller: Infineon Technologies
Description: IC FLASH
Packaging: Bulk
Part Status: Obsolete
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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593995-003-38
Hersteller: Infineon Technologies
Description: IC FLASH
Packaging: Bulk
Part Status: Obsolete
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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593995-005-69
Hersteller: Infineon Technologies
Description: IC FLASH
Packaging: Bulk
Part Status: Obsolete
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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CG7380AM
Hersteller: Infineon Technologies
Description: IC FLASH 40QFN 1MM
Packaging: Bulk
Part Status: Obsolete
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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FM25640B-G2 Infineon-FM25640B_64-Kbit_(8_K_8)_Serial_(SPI)_F-RAM-DataSheet-v10_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebdf9d63113&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
FM25640B-G2
Hersteller: Infineon Technologies
Description: IC FRAM 64KBIT SPI 20MHZ 8SOIC
DigiKey Programmable: Not Verified
Memory Organization: 8K x 8
Memory Interface: SPI
Supplier Device Package: 8-SOIC
Memory Format: FRAM
Clock Frequency: 20 MHz
Technology: FRAM (Ferroelectric RAM)
Voltage - Supply: 4.5V ~ 5.5V
Operating Temperature: -40°C ~ 85°C (TA)
Memory Type: Non-Volatile
Memory Size: 64Kbit
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tube
Produkt ist nicht verfügbar
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CY8C4248FNI-BL583T ?utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
CY8C4248FNI-BL583T
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 256KB FLASH 76WLCSP
DigiKey Programmable: Not Verified
Number of I/O: 36
Part Status: Active
Supplier Device Package: 76-WLCSP (4.04×3.87)
Peripherals: Bluetooth, Brown-out Detect/Reset, Cap Sense, DMA LCD, LVD, POR, PWM, SmartCard, SmartSense, WDT
Connectivity: I²C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Core Size: 32-Bit Single-Core
Data Converters: A/D 16x12b SAR; D/A 2xIDAC
Core Processor: ARM® Cortex®-M0
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 85°C (TA)
RAM Size: 32K x 8
Program Memory Size: 256KB (256K x 8)
Speed: 48MHz
Mounting Type: Surface Mount
Package / Case: 76-UFBGA, WLCSP
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 2000 Stücke
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SPP80N06S08NK
SPP80N06S08NK
Hersteller: Infineon Technologies
Description: MOSFET N-CH 55V 80A TO220-3
Drain to Source Voltage (Vdss): 55 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: PG-TO220-3
Vgs(th) (Max) @ Id: 4V @ 240µA
Power Dissipation (Max): 300W (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 80A, 10V
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Package / Case: TO-220-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 3660 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 187 nC @ 10 V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Produkt ist nicht verfügbar
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TLE42712SNKSA1 TLE4271-2.pdf
TLE42712SNKSA1
Hersteller: Infineon Technologies
Description: IC REG LIN 5V 550MA TO220-7-12
Control Features: Reset, Watchdog
Voltage - Output (Min/Fixed): 5V
Supplier Device Package: PG-TO220-7-12
Number of Regulators: 1
Voltage - Input (Max): 40V
Current - Quiescent (Iq): 6 µA
Output Configuration: Positive
Operating Temperature: -40°C ~ 150°C (TJ)
Current - Output: 550mA
Mounting Type: Through Hole
Output Type: Fixed
Package / Case: TO-220-7
Packaging: Tube
Current - Supply (Max): 90 mA
Protection Features: Over Current, Over Temperature, Over Voltage, Reverse Polarity, Short Circuit
Voltage Dropout (Max): 0.7V @ 550mA
PSRR: 54dB (100Hz)
Part Status: Obsolete
Produkt ist nicht verfügbar
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D475N32BS20XPSA1
Hersteller: Infineon Technologies
Description: MOD DIODE RECTIFIER
Produkt ist nicht verfügbar
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DD25DS2016KKHPSA1
DD25DS2016KKHPSA1
Hersteller: Infineon Technologies
Description: MOD DIODE THYRISTOR
Produkt ist nicht verfügbar
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T860N32TOFS01XPSA1
Hersteller: Infineon Technologies
Description: MOD DIODE THYRISTOR
Produkt ist nicht verfügbar
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IKA10N65ET6XKSA2 Infineon-IKA10N65ET6-DS-v02_02-EN.pdf?fileId=5546d4625e763904015e844d55a5527e
IKA10N65ET6XKSA2
Hersteller: Infineon Technologies
Description: IGBT TRENCH FS 650V 15A TO220-3
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 51 ns
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 8.5A
Supplier Device Package: PG-TO220-3-FP
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 30ns/106ns
Switching Energy: 200µJ (on), 70µJ (off)
Test Condition: 400V, 8.5A, 47Ohm, 15V
Gate Charge: 27 nC
Part Status: Not For New Designs
Current - Collector (Ic) (Max): 15 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 42.5 A
Power - Max: 40 W
auf Bestellung 394 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
4+4.98 EUR
50+2.49 EUR
100+2.24 EUR
Mindestbestellmenge: 4 Stücke
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IRGS4B60KPBF
IRGS4B60KPBF
Hersteller: Infineon Technologies
Description: IGBT 600V D2PAK-3
Power - Max: 63 W
Current - Collector Pulsed (Icm): 24 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 12 A
Gate Charge: 12 nC
Test Condition: 400V, 4A, 100Ohm, 15V
Switching Energy: 73µJ (on), 47µJ (off)
Td (on/off) @ 25°C: 22ns/100ns
IGBT Type: NPT
Supplier Device Package: D2PAK
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 4A
Input Type: Standard
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tube
Produkt ist nicht verfügbar
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IPW65R045C7300XKSA1
IPW65R045C7300XKSA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 650V 46A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 46A (Tc)
Rds On (Max) @ Id, Vgs: 45mOhm @ 24.9A, 10V
Power Dissipation (Max): 227W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1.25mA
Supplier Device Package: PG-TO247-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 93 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4340 pF @ 400 V
Produkt ist nicht verfügbar
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BAT1502ELSE6327XTSA1 Infineon-BAT15-02ELS-DS-v01_00-EN.pdf?fileId=5546d46265f064ff01663895e8f04e77
BAT1502ELSE6327XTSA1
Hersteller: Infineon Technologies
Description: RF DIODE PG-TSSLP-2-3
Packaging: Tape & Reel (TR)
Package / Case: 0201 (0603 Metric)
Supplier Device Package: PG-TSSLP-2-3
Part Status: Not For New Designs
Produkt ist nicht verfügbar
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BFR740EL3E6829XTSA1 Infineon-BFR740EL3-DS-v01_00-EN.pdf?fileId=5546d46265f064ff01663896f5f94ec8
BFR740EL3E6829XTSA1
Hersteller: Infineon Technologies
Description: RF TRANS NPN 42GHZ PG-TSLP-3-10
Packaging: Tape & Reel (TR)
Package / Case: 3-XFDFN
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 11dB
Power - Max: 160mW
Current - Collector (Ic) (Max): 40mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 25mA, 3V
Frequency - Transition: 42GHz
Noise Figure (dB Typ @ f): 1.5dB @ 12GHz
Supplier Device Package: PG-TSLP-3-10
Produkt ist nicht verfügbar
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BGS13S4N9E6327XTSA1 Infineon-BGS13S4N9-DS-v01_00-EN.pdf?fileId=5546d46262475fbe016248809d333d02
BGS13S4N9E6327XTSA1
Hersteller: Infineon Technologies
Description: IC RF SWITCH SP3T TSNP9-3
Produkt ist nicht verfügbar
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BSC010N04LSTATMA1 infineon-bsc010n04lst-datasheet-en.pdf
BSC010N04LSTATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 40V 39A/100A TDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 39A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 1mOhm @ 50A, 10V
Power Dissipation (Max): 3W (Ta), 167W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TDSON-8 FL
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 133 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9520 pF @ 20 V
Produkt ist nicht verfügbar
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BSC011N03LSTATMA1 Infineon-BSC011N03LST-DS-v02_01-EN.pdf?fileId=5546d462602a9dc801605467a7822cad
BSC011N03LSTATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 30V 39A/100A TDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 39A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 1.1mOhm @ 30A, 10V
Power Dissipation (Max): 3W (Ta), 115W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TDSON-8 FL
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 6300 pF @ 15 V
Produkt ist nicht verfügbar
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BSC014N04LSTATMA1 Infineon-BSC014N04LST-DS-v02_01-EN.pdf?fileId=5546d462602a9dc80160546e5cba2cb8
BSC014N04LSTATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 40V 33A/100A TDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 33A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 1.4mOhm @ 50A, 10V
Power Dissipation (Max): 3W (Ta), 115W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TDSON-8 FL
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 85 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6020 pF @ 20 V
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
5000+1.2 EUR
Mindestbestellmenge: 5000 Stücke
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BSC014N06NSTATMA1 Infineon-BSC014N06NST-DS-v02_00-EN.pdf?fileId=5546d462602a9dc80160546e79762cbe
BSC014N06NSTATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 60V 100A TDSON-8 FL
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 1.45mOhm @ 50A, 10V
Power Dissipation (Max): 3W (Ta), 188W (Tc)
Vgs(th) (Max) @ Id: 3.3V @ 120µA
Supplier Device Package: PG-TDSON-8 FL
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 104 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8125 pF @ 30 V
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
5000+2.24 EUR
Mindestbestellmenge: 5000 Stücke
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BSC016N06NSTATMA1 Infineon-BSC016N06NST-DS-v02_00-EN.pdf?fileId=5546d462602a9dc801605455cb0b2c6e
BSC016N06NSTATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 60V 31A/100A TDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 31A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 1.6mOhm @ 50A, 10V
Power Dissipation (Max): 3W (Ta), 167W (Tc)
Vgs(th) (Max) @ Id: 3.3V @ 95µA
Supplier Device Package: PG-TDSON-8 FL
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6500 pF @ 30 V
Produkt ist nicht verfügbar
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BSC028N06NSTATMA1 Infineon-BSC028N06NST-DS-v02_01-EN.pdf?fileId=5546d462602a9dc80160546e6c1d2cbb
BSC028N06NSTATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 60V 24A/100A TDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 2.8mOhm @ 50A, 10V
Power Dissipation (Max): 3W (Ta), 100W (Tc)
Vgs(th) (Max) @ Id: 3.3V @ 50µA
Supplier Device Package: PG-TDSON-8-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3375 pF @ 30 V
auf Bestellung 15000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
5000+1.59 EUR
10000+1.51 EUR
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BSC097N06NSTATMA1 Infineon-BSC097N06NST-DS-v02_00-EN.pdf?fileId=5546d462602a9dc80160546e889d2cc1
BSC097N06NSTATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 60V 13A/48A TDSON
Input Capacitance (Ciss) (Max) @ Vds: 1075 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Part Status: Not For New Designs
Supplier Device Package: PG-TDSON-8-1
Vgs(th) (Max) @ Id: 3.3V @ 14µA
Power Dissipation (Max): 3W (Ta), 43W (Tc)
Rds On (Max) @ Id, Vgs: 9.7mOhm @ 40A, 10V
Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 48A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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IAUT150N10S5N035ATMA1 Infineon-IAUT150N10S5N035-DS-v01_00-EN.pdf?fileId=5546d4625ee5d4cd015f246034af323f
IAUT150N10S5N035ATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 100V 150A 8HSOF
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 150A (Tc)
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 75A, 10V
Power Dissipation (Max): 166W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 110µA
Supplier Device Package: PG-HSOF-8-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 87 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6110 pF @ 50 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 2000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
2000+1.93 EUR
Mindestbestellmenge: 2000 Stücke
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IAUT260N10S5N019ATMA1 Infineon-IAUT260N10S5N019-DS-v01_00-EN.pdf?fileId=5546d4625ee5d4cd015f2460488e3241
IAUT260N10S5N019ATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 100V 260A 8HSOF
Input Capacitance (Ciss) (Max) @ Vds: 11830 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 166 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Part Status: Active
Supplier Device Package: PG-HSOF-8-1
Vgs(th) (Max) @ Id: 3.8V @ 210µA
Power Dissipation (Max): 300W (Tc)
Rds On (Max) @ Id, Vgs: 1.9mOhm @ 100A, 10V
Current - Continuous Drain (Id) @ 25°C: 260A (Tc)
FET Type: N-Channel
Qualification: AEC-Q101
Grade: Automotive
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerSFN
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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IAUT300N10S5N015ATMA1 Infineon-IAUT300N10S5N015-DS-v01_00-EN.pdf?fileId=5546d4625ee5d4cd015f2469d7203245
IAUT300N10S5N015ATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 100V 300A 8HSOF
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 16011 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 216 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Part Status: Active
Supplier Device Package: PG-HSOF-8-1
Vgs(th) (Max) @ Id: 3.8V @ 275µA
Rds On (Max) @ Id, Vgs: 1.5mOhm @ 100A, 10V
Current - Continuous Drain (Id) @ 25°C: 300A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerSFN
Packaging: Tape & Reel (TR)
Power Dissipation (Max): 375W (Tc)
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
2000+3.59 EUR
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ICE5AR0680AGXUMA1 Infineon-ICE5xRxxxxAG-DS-v02_00-EN.pdf?fileId=5546d462602a9dc801607d6123c745a6
ICE5AR0680AGXUMA1
Hersteller: Infineon Technologies
Description: IC OFFLINE SWITCH FLYBACK 12DSO
Power (Watts): 40 W
Part Status: Active
Control Features: EN, Soft Start, Sync
Fault Protection: Current Limiting, Open Loop, Over Load, Over Temperature, Over Voltage
Supplier Device Package: PG-DSO-12-21
Voltage - Supply (Vcc/Vdd): 10V ~ 25.5V
Topology: Flyback
Output Isolation: Non-Isolated
Voltage - Breakdown: 800V
Internal Switch(s): Yes
Frequency - Switching: 100kHz
Duty Cycle: 75%
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 16-SOIC (0.154", 3.90mm Width), 12 Leads
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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ICE5AR4770AGXUMA1 Infineon-ICE5xRxxxxAG-DS-v02_00-EN.pdf?fileId=5546d462602a9dc801607d6123c745a6
ICE5AR4770AGXUMA1
Hersteller: Infineon Technologies
Description: IC OFFLINE SWITCH FLYBACK 12DSO
Power (Watts): 15 W
Part Status: Active
Control Features: EN, Soft Start, Sync
Fault Protection: Current Limiting, Open Loop, Over Load, Over Temperature, Over Voltage
Supplier Device Package: PG-DSO-12-21
Voltage - Supply (Vcc/Vdd): 10V ~ 25.5V
Topology: Flyback
Output Isolation: Non-Isolated
Voltage - Breakdown: 700V
Internal Switch(s): Yes
Frequency - Switching: 100kHz
Duty Cycle: 75%
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 16-SOIC (0.154", 3.90mm Width), 12 Leads
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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ICE5ASAGXUMA1 INFN-S-A0004583216-1.pdf?t.download=true&u=5oefqw
ICE5ASAGXUMA1
Hersteller: Infineon Technologies
Description: IC OFFLINE SWITCH FLYBACK 8DSO
Power (Watts): 60 W
Part Status: Active
Control Features: EN, Soft Start, Sync
Voltage - Start Up: 16 V
Fault Protection: Current Limiting, Open Loop, Over Load, Over Temperature, Over Voltage
Supplier Device Package: PG-DSO-8
Voltage - Supply (Vcc/Vdd): 10V ~ 25.5V
Internal Switch(s): Yes
Frequency - Switching: 100kHz
Duty Cycle: 75%
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Topology: Flyback
Output Isolation: Non-Isolated
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
2500+0.58 EUR
Mindestbestellmenge: 2500 Stücke
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ICE5GR1680AGXUMA1 Infineon-ICE5xRxxxxAG-DS-v02_00-EN.pdf?fileId=5546d462602a9dc801607d6123c745a6
ICE5GR1680AGXUMA1
Hersteller: Infineon Technologies
Description: IC OFFLINE SWITCH FLYBACK 12DSO
Power (Watts): 27 W
Part Status: Active
Control Features: EN, Soft Start, Sync
Fault Protection: Current Limiting, Open Loop, Over Load, Over Temperature, Over Voltage
Supplier Device Package: PG-DSO-12-21
Voltage - Supply (Vcc/Vdd): 10V ~ 25.5V
Topology: Flyback
Output Isolation: Non-Isolated
Voltage - Breakdown: 800V
Internal Switch(s): Yes
Frequency - Switching: 125kHz
Duty Cycle: 75%
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 16-SOIC (0.154", 3.90mm Width), 12 Leads
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
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IDFW40E65D1EXKSA1 Infineon-IDFW40E65D1E-DS-v02_02-EN.pdf?fileId=5546d462602a9dc8016034fef5752df5
IDFW40E65D1EXKSA1
Hersteller: Infineon Technologies
Description: DIODE GP 650V 42A TO247-3-AI
Current - Reverse Leakage @ Vr: 40 µA @ 650 V
Voltage - Forward (Vf) (Max) @ If: 2.1 V @ 40 A
Voltage - DC Reverse (Vr) (Max): 650 V
Part Status: Active
Operating Temperature - Junction: -40°C ~ 175°C
Supplier Device Package: PG-TO247-3-AI
Current - Average Rectified (Io): 42A
Technology: Standard
Reverse Recovery Time (trr): 76 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
auf Bestellung 210 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
2+9.15 EUR
10+6.1 EUR
Mindestbestellmenge: 2 Stücke
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IKFW40N60DH3EXKSA1 Infineon-IKFW40N60DH3E-DS-v02_01-EN.pdf?fileId=5546d462602a9dc8016034ff098b2df8
IKFW40N60DH3EXKSA1
Hersteller: Infineon Technologies
Description: IGBT TRENCH FS 600V 34A TO-247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 72 ns
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 30A
Supplier Device Package: PG-TO247-3-AI
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 18ns/144ns
Switching Energy: 870µJ (on), 360µJ (off)
Test Condition: 400V, 30A, 10Ohm, 15V
Gate Charge: 107 nC
Part Status: Active
Current - Collector (Ic) (Max): 34 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 90 A
Power - Max: 111 W
auf Bestellung 47 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
2+11.09 EUR
30+6.28 EUR
Mindestbestellmenge: 2 Stücke
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