Produkte > INFINEON TECHNOLOGIES > Alle Produkte des Herstellers INFINEON TECHNOLOGIES (124697) > Seite 309 nach 2079

Wählen Sie Seite:   [  << Vorherige Seite ]  1 207 304 305 306 307 308 309 310 311 312 313 314 414 621 828 1035 1242 1449 1656 1863 2070 2079  [ Nächste Seite >> ]
Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit Privatkunde
IPD90N10S4L06ATMA1 IPD90N10S4L06ATMA1 Infineon Technologies Infineon-IPD90N10S4L_06-DS-v01_00-en.pdf?fileId=db3a3043372d5cc80137500063630512 Description: MOSFET N-CH 100V 90A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 6.6mOhm @ 90A, 10V
Power Dissipation (Max): 136W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 90µA
Supplier Device Package: PG-TO252-3-313
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 98 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6250 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 5890 Stücke:
Lieferzeit 10-14 Tag (e)
5+5.11 EUR
10+3.3 EUR
100+2.27 EUR
500+1.86 EUR
Mindestbestellmenge: 5 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
1EBN1001AEXUMA1 1EBN1001AEXUMA1 Infineon Technologies Infineon-1EBN1001AE-DS-v03_00-EN.pdf?fileId=5546d462503812bb01505fa4d89805a0 Description: IC GATE DRVR HI/LOW SIDE 14SOIC
Packaging: Cut Tape (CT)
Package / Case: 14-SOIC (0.154", 3.90mm Width) Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 13V ~ 18V
High Side Voltage - Max (Bootstrap): 1200 V
Supplier Device Package: PG-DSO-14-43
Rise / Fall Time (Typ): 50ns, 90ns
Channel Type: Single
Driven Configuration: High-Side or Low-Side
Number of Drivers: 1
Gate Type: IGBT, MOSFET (N-Channel, P-Channel)
Logic Voltage - VIL, VIH: 1.5V, 3.5V
Grade: Automotive
Part Status: Active
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
auf Bestellung 4540 Stücke:
Lieferzeit 10-14 Tag (e)
4+6.34 EUR
10+4.76 EUR
25+4.37 EUR
100+3.94 EUR
250+3.74 EUR
500+3.69 EUR
Mindestbestellmenge: 4 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
AUIRF5210STRL AUIRF5210STRL Infineon Technologies auirf5210s.pdf?fileId=5546d462533600a4015355acd8ce13c3 Description: MOSFET P-CH 100V 38A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 38A (Tc)
Rds On (Max) @ Id, Vgs: 60mOhm @ 38A, 10V
Power Dissipation (Max): 3.1W (Ta), 170W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Grade: Automotive
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 230 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2780 pF @ 25 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPD65R400CEAUMA1 IPD65R400CEAUMA1 Infineon Technologies Infineon-IPD65R400CE-DS-v02_00-EN.pdf?fileId=5546d462533600a401539eb64cd44f67 Description: MOSFET N-CH 650V 15.1A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15.1A (Tc)
Rds On (Max) @ Id, Vgs: 400mOhm @ 3.2A, 10V
Power Dissipation (Max): 118W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 320µA
Supplier Device Package: PG-TO252-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 710 pF @ 100 V
auf Bestellung 15243 Stücke:
Lieferzeit 10-14 Tag (e)
7+3.01 EUR
12+1.9 EUR
100+1.26 EUR
500+1 EUR
1000+0.9 EUR
Mindestbestellmenge: 7 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
BTS3046SDLATMA1 BTS3046SDLATMA1 Infineon Technologies Infineon-BTS3046SDL-DS-v01_00-EN.pdf?fileId=5546d4625a888733015aad821c9e4c21 Description: IC PWR SWITCH N-CHAN 1:1 TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Low Side
Rds On (Typ): 46mOhm
Input Type: Non-Inverting
Voltage - Load: 60V (Max)
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 3.6A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-TO252-3-11
Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage
Part Status: Active
auf Bestellung 5129 Stücke:
Lieferzeit 10-14 Tag (e)
6+4.14 EUR
10+3.06 EUR
25+2.8 EUR
100+2.5 EUR
250+2.36 EUR
500+2.28 EUR
Mindestbestellmenge: 6 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
BSC0504NSIATMA1 BSC0504NSIATMA1 Infineon Technologies Infineon-BSC0504NSI-DS-v02_00-EN.pdf?fileId=5546d4624eeb2bc7014f0286ff3c3d3d Description: MOSFET N-CH 30V 21A/72A TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 72A (Tc)
Rds On (Max) @ Id, Vgs: 3.7mOhm @ 30A, 10V
Power Dissipation (Max): 2.5W (Ta), 30W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TDSON-8-6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 960 pF @ 15 V
auf Bestellung 34757 Stücke:
Lieferzeit 10-14 Tag (e)
9+2.57 EUR
13+1.62 EUR
100+1.07 EUR
500+0.83 EUR
1000+0.75 EUR
2000+0.69 EUR
Mindestbestellmenge: 9 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
1ED020I12FTAXUMA2 1ED020I12FTAXUMA2 Infineon Technologies infineon-1ed020i12-b2-datasheet-en.pdf Description: DGT ISO 4.5KV 1CH GT DVR DSO20
Packaging: Cut Tape (CT)
Package / Case: 20-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Magnetic Coupling
Current - Output High, Low: 2A, 2A
Voltage - Isolation: 4500Vrms
Supplier Device Package: PG-DSO-20-55
Rise / Fall Time (Typ): 30ns, 20ns
Part Status: Not For New Designs
Number of Channels: 1
Voltage - Output Supply: 4.5V ~ 5.5V
auf Bestellung 2674 Stücke:
Lieferzeit 10-14 Tag (e)
2+14.93 EUR
10+11.55 EUR
25+10.71 EUR
100+9.78 EUR
250+9.54 EUR
Mindestbestellmenge: 2 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
TLE73683EXUMA2 TLE73683EXUMA2 Infineon Technologies Infineon-TLE7368-DS-v02_21-EN.pdf?fileId=5546d46258fc0bc1015969d271b041d1 Description: IC REG AUTO APPL 3OUT DSO-36
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPB65R110CFDAATMA1 IPB65R110CFDAATMA1 Infineon Technologies Infineon-IPX65R110CFDA-DS-v02_00-en.pdf?fileId=db3a304336797ff90136ba7c820925a5 Description: MOSFET N-CH 650V 31.2A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 31.2A (Tc)
Rds On (Max) @ Id, Vgs: 110mOhm @ 12.7A, 10V
Power Dissipation (Max): 277.8W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1.3mA
Supplier Device Package: PG-TO263-3
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 118 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3240 pF @ 100 V
Qualification: AEC-Q101
auf Bestellung 1682 Stücke:
Lieferzeit 10-14 Tag (e)
2+13.11 EUR
10+8.82 EUR
100+6.4 EUR
500+6.05 EUR
Mindestbestellmenge: 2 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
IPB180N08S402ATMA1 IPB180N08S402ATMA1 Infineon Technologies IPB180N08S4-02-Data-Sheet-10-Infineon.pdf?fileId=5546d4614755559a01475d701b54019c Description: MOSFET N-CH 80V 180A TO263-7
Packaging: Cut Tape (CT)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
Rds On (Max) @ Id, Vgs: 2.2mOhm @ 100A, 10V
Power Dissipation (Max): 277W (Tc)
Vgs(th) (Max) @ Id: 4V @ 220µA
Supplier Device Package: PG-TO263-7-3
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 167 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11550 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 33 Stücke:
Lieferzeit 10-14 Tag (e)
2+14.96 EUR
10+10.08 EUR
Mindestbestellmenge: 2 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
BSL308PEH6327XTSA1 BSL308PEH6327XTSA1 Infineon Technologies Infineon-BSL308PE-DS-v02_03-en.pdf?fileId=db3a30431d8a6b3c011d8ff3592c03d0 Description: MOSFET 2P-CH 30V 2A TSOP6-6
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 500mW
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 2A
Input Capacitance (Ciss) (Max) @ Vds: 500pF @ 15V
Rds On (Max) @ Id, Vgs: 80mOhm @ 2A, 10V
Gate Charge (Qg) (Max) @ Vgs: 5nC @ 10V
FET Feature: Logic Level Gate, 4.5V Drive
Vgs(th) (Max) @ Id: 1V @ 11µA
Supplier Device Package: PG-TSOP6-6
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
auf Bestellung 17943 Stücke:
Lieferzeit 10-14 Tag (e)
11+1.93 EUR
18+1.2 EUR
100+0.79 EUR
500+0.61 EUR
1000+0.55 EUR
Mindestbestellmenge: 11 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
BSS138WH6433XTMA1 BSS138WH6433XTMA1 Infineon Technologies Infineon-BSS138W-DS-v02_43-en.pdf?fileId=db3a304335113a6301351e62fcb4131f Description: MOSFET N-CH 60V 280MA SOT323-3
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 280mA (Ta)
Rds On (Max) @ Id, Vgs: 3.5Ohm @ 200mA, 10V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 1.4V @ 26µA
Supplier Device Package: PG-SOT323
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 1.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 43 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 9275 Stücke:
Lieferzeit 10-14 Tag (e)
32+0.67 EUR
53+0.4 EUR
100+0.25 EUR
500+0.19 EUR
1000+0.17 EUR
2000+0.14 EUR
5000+0.13 EUR
Mindestbestellmenge: 32 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
BSP125H6433XTMA1 BSP125H6433XTMA1 Infineon Technologies Infineon-BSP125-DS-v02_02-en.pdf?fileId=db3a30433b47825b013b50cae9702806 Description: MOSFET N-CH 600V 120MA SOT223-4
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120mA (Ta)
Power Dissipation (Max): 1.8W (Ta)
Vgs(th) (Max) @ Id: 2.3V @ 94µA
Supplier Device Package: PG-SOT223-4
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 6.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 150 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 11802 Stücke:
Lieferzeit 10-14 Tag (e)
9+2.43 EUR
14+1.52 EUR
100+1 EUR
500+0.77 EUR
1000+0.7 EUR
2000+0.64 EUR
Mindestbestellmenge: 9 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
BSP716NH6327XTSA1 BSP716NH6327XTSA1 Infineon Technologies Infineon-BSP716N-DS-v02_00-en.pdf?fileId=db3a304341c1e4a10141da580f3529e9 Description: MOSFET N-CH 75V 2.3A SOT223-4
Input Capacitance (Ciss) (Max) @ Vds: 315 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 13.1 nC @ 10 V
Drain to Source Voltage (Vdss): 75 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: PG-SOT223-4
Vgs(th) (Max) @ Id: 1.8V @ 218µA
Power Dissipation (Max): 1.8W (Ta)
Rds On (Max) @ Id, Vgs: 160mOhm @ 2.3A, 10V
Current - Continuous Drain (Id) @ 25°C: 2.3A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TLE9871QXA20XUMA2 TLE9871QXA20XUMA2 Infineon Technologies Infineon-TLE9871QXA20-DS-v01_00-EN.pdf?fileId=5546d4625a888733015a89e33fad3f30 Description: IC SOC MOTOR DRIVER 48VQFN
Qualification: AEC-Q100
DigiKey Programmable: Not Verified
Number of I/O: 10
Grade: Automotive
Supplier Device Package: PG-VQFN-48-31
Core Processor: ARM® Cortex®-M3
Program Memory Type: FLASH (36kB)
Voltage - Supply: 5.5V ~ 28V
Operating Temperature: -40°C ~ 150°C
RAM Size: 3K x 8
Interface: SSI, UART
Mounting Type: Surface Mount
Package / Case: 48-VFQFN Exposed Pad
Packaging: Cut Tape (CT)
auf Bestellung 2490 Stücke:
Lieferzeit 10-14 Tag (e)
3+10.14 EUR
10+7.75 EUR
25+7.15 EUR
100+6.5 EUR
250+6.19 EUR
500+6 EUR
1000+5.84 EUR
Mindestbestellmenge: 3 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
TLE9877QXA20XUMA2 TLE9877QXA20XUMA2 Infineon Technologies Infineon-TLE9877QXA20-DS-v01_00-EN.pdf?fileId=5546d4625a888733015a89d127563f28 Description: IC SOC MOTOR DRIVER 48VQFN
Number of I/O: 10
Part Status: Not For New Designs
Supplier Device Package: PG-VQFN-48-31
Core Processor: ARM® Cortex®-M3
Applications: Automotive
Program Memory Type: FLASH (64kB)
Voltage - Supply: 5.5V ~ 28V
Operating Temperature: -40°C ~ 150°C
RAM Size: 6K x 8
Interface: LIN, SSI, UART
Mounting Type: Surface Mount
Package / Case: 48-VFQFN Exposed Pad
Packaging: Cut Tape (CT)
auf Bestellung 225 Stücke:
Lieferzeit 10-14 Tag (e)
3+7.16 EUR
Mindestbestellmenge: 3 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
TLE9877QXA40XUMA2 TLE9877QXA40XUMA2 Infineon Technologies Infineon-TLE987x-ProductBrief-PB-v01_00-EN.pdf?fileId=5546d46249a28d750149aee472032794 Description: IC SOC MOTOR DRIVER 48VQFN
Qualification: AEC-Q100
Grade: Automotive
DigiKey Programmable: Not Verified
Number of I/O: 10
Part Status: Active
Supplier Device Package: PG-VQFN-48-31
Core Processor: ARM® Cortex®-M3
Program Memory Type: FLASH (64kB)
Voltage - Supply: 5.5V ~ 28V
Operating Temperature: -40°C ~ 150°C
RAM Size: 6K x 8
Interface: LIN, SSI, UART
Mounting Type: Surface Mount
Package / Case: 48-VFQFN Exposed Pad
Packaging: Cut Tape (CT)
auf Bestellung 8017 Stücke:
Lieferzeit 10-14 Tag (e)
3+10.34 EUR
10+7.93 EUR
25+7.32 EUR
100+6.65 EUR
250+6.33 EUR
500+6.14 EUR
1000+5.99 EUR
Mindestbestellmenge: 3 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
TLE9877QXW40XUMA1 TLE9877QXW40XUMA1 Infineon Technologies Infineon-TLE987x-ProductBrief-PB-v01_00-EN.pdf?fileId=5546d46249a28d750149aee472032794 Description: IC SOC MOTOR DRIVER 48VQFN
Qualification: AEC-Q100
Grade: Automotive
DigiKey Programmable: Not Verified
Number of I/O: 10
Part Status: Active
Supplier Device Package: PG-VQFN-48-29
Core Processor: ARM® Cortex®-M3
Program Memory Type: FLASH (64kB)
Voltage - Supply: 5.5V ~ 28V
Operating Temperature: -40°C ~ 175°C
RAM Size: 6K x 8
Interface: LIN, SSI, UART
Mounting Type: Surface Mount
Package / Case: 48-VFQFN Exposed Pad
Packaging: Cut Tape (CT)
auf Bestellung 3824 Stücke:
Lieferzeit 10-14 Tag (e)
2+10.86 EUR
10+8.34 EUR
25+7.71 EUR
100+7.01 EUR
250+6.68 EUR
500+6.47 EUR
1000+6.32 EUR
Mindestbestellmenge: 2 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
TLE9879QXA20XUMA2 TLE9879QXA20XUMA2 Infineon Technologies Infineon-TLE9879QXA20-DS-v01_00-EN.pdf?fileId=5546d46259d9a4bf015a8473ba2274de Description: IC SOC MOTOR DRIVER 48VQFN
DigiKey Programmable: Not Verified
Number of I/O: 10
Supplier Device Package: PG-VQFN-48-31
Core Processor: ARM® Cortex®-M3
Applications: Automotive
Program Memory Type: FLASH (128kB)
Voltage - Supply: 5.5V ~ 28V
Operating Temperature: -40°C ~ 150°C
RAM Size: 6K x 8
Interface: LIN, SSI, UART
Mounting Type: Surface Mount
Package / Case: 48-VFQFN Exposed Pad
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TLE9879QXW40XUMA1 TLE9879QXW40XUMA1 Infineon Technologies Infineon-TLE987x-ProductBrief-PB-v01_00-EN.pdf?fileId=5546d46249a28d750149aee472032794 Description: IC SOC MOTOR DRIVER 48VQFN
Qualification: AEC-Q100
Grade: Automotive
DigiKey Programmable: Not Verified
Number of I/O: 10
Supplier Device Package: PG-VQFN-48-29
Core Processor: ARM® Cortex®-M3
Program Memory Type: FLASH (128kB)
Voltage - Supply: 5.5V ~ 28V
Operating Temperature: -40°C ~ 175°C
RAM Size: 6K x 8
Interface: LIN, SSI, UART
Mounting Type: Surface Mount
Package / Case: 48-VFQFN Exposed Pad
Packaging: Cut Tape (CT)
auf Bestellung 1730 Stücke:
Lieferzeit 10-14 Tag (e)
2+11.47 EUR
10+8.82 EUR
25+8.15 EUR
100+7.43 EUR
250+7.08 EUR
500+6.87 EUR
1000+6.69 EUR
Mindestbestellmenge: 2 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
TLE9867QXA40XUMA2 TLE9867QXA40XUMA2 Infineon Technologies Infineon-TLE9867QXA40-DS-v01_00-EN.pdf?fileId=5546d4625a888733015a8a3f72423f48 Description: IC SOC MOTOR DRIVER 48VQFN
Qualification: AEC-Q100
DigiKey Programmable: Not Verified
Number of I/O: 10
Grade: Automotive
Supplier Device Package: VQFN-48-31
Core Processor: ARM® Cortex®-M3
Program Memory Type: FLASH (64kB)
Voltage - Supply: 5.5V ~ 28V
Operating Temperature: -40°C ~ 150°C
RAM Size: 6K x 8
Interface: LIN, SSI, UART
Mounting Type: Surface Mount
Package / Case: 48-VFQFN Exposed Pad
Packaging: Cut Tape (CT)
auf Bestellung 2336 Stücke:
Lieferzeit 10-14 Tag (e)
3+9.45 EUR
10+7.2 EUR
25+6.64 EUR
100+6.02 EUR
250+5.74 EUR
500+5.56 EUR
1000+5.41 EUR
Mindestbestellmenge: 3 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
TLE9867QXW20XUMA1 TLE9867QXW20XUMA1 Infineon Technologies Infineon-TLE9867QXW20-DS-v01_00-EN.pdf?fileId=5546d4625b10283a015b2486a2e22e42 Description: IC SOC MOTOR DRIVER 48VQFN
Qualification: AEC-Q100
DigiKey Programmable: Not Verified
Number of I/O: 10
Grade: Automotive
Supplier Device Package: PG-VQFN-48-29
Core Processor: ARM® Cortex®-M3
Program Memory Type: FLASH (128kB)
Voltage - Supply: 5.5V ~ 28V
Operating Temperature: -40°C ~ 175°C
RAM Size: 6K x 8
Interface: LIN, SSI, UART
Mounting Type: Surface Mount
Package / Case: 48-VFQFN Exposed Pad
Packaging: Cut Tape (CT)
auf Bestellung 4079 Stücke:
Lieferzeit 10-14 Tag (e)
4+5.59 EUR
10+5.58 EUR
Mindestbestellmenge: 4 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
TLE9869QXA20XUMA2 TLE9869QXA20XUMA2 Infineon Technologies Infineon-TLE9869QXA20-DS-v01_00-EN.pdf?fileId=5546d4625a888733015a8a3614cd3f3c Description: IC SOC MOTOR DRIVER 48VQFN
Qualification: AEC-Q100
Grade: Automotive
DigiKey Programmable: Not Verified
Number of I/O: 10
Supplier Device Package: PG-VQFN-48-31
Core Processor: ARM® Cortex®-M3
Program Memory Type: FLASH (128kB)
Voltage - Supply: 5.5V ~ 28V
Operating Temperature: -40°C ~ 150°C
RAM Size: 6K x 8
Interface: LIN, SSI, UART
Mounting Type: Surface Mount
Package / Case: 48-VFQFN Exposed Pad
Packaging: Cut Tape (CT)
auf Bestellung 3338 Stücke:
Lieferzeit 10-14 Tag (e)
4+5.62 EUR
10+5.6 EUR
Mindestbestellmenge: 4 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
TLE98432QXXUMA1 TLE98432QXXUMA1 Infineon Technologies Infineon-TLE9843-2QX-DS-v01_00-EN.pdf?fileId=5546d4625a888733015a893e5eaf029b Description: EMBEDDED POWER
Number of I/O: 10
Part Status: Active
Supplier Device Package: PG-VQFN-48-31
Core Processor: ARM® Cortex®-M0
Program Memory Type: FLASH (52kB)
Voltage - Supply: 3V ~ 28V
Operating Temperature: -40°C ~ 150°C (TJ)
RAM Size: 4K x 8
Interface: LIN, SSI, UART
Mounting Type: Surface Mount
Package / Case: 48-VFQFN Exposed Pad
Packaging: Cut Tape (CT)
Qualification: AEC-Q100
Grade: Automotive
DigiKey Programmable: Not Verified
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
3+7.85 EUR
10+5.95 EUR
25+5.47 EUR
100+4.95 EUR
250+4.71 EUR
500+4.56 EUR
1000+4.44 EUR
Mindestbestellmenge: 3 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
TLE98422QXXUMA1 TLE98422QXXUMA1 Infineon Technologies Infineon-TLE9842-2QX-DS-v01_00-EN.pdf?fileId=5546d46259d9a4bf015a84aabc5f7511 Description: EMBEDDED POWER
Qualification: AEC-Q100
DigiKey Programmable: Not Verified
Number of I/O: 10
Grade: Automotive
Supplier Device Package: PG-VQFN-48-31
Core Processor: ARM® Cortex®-M0
Program Memory Type: FLASH (40kB)
Voltage - Supply: 3V ~ 28V
Operating Temperature: -40°C ~ 150°C (TJ)
RAM Size: 2K x 8
Interface: LIN, SSI, UART
Mounting Type: Surface Mount
Package / Case: 48-VFQFN Exposed Pad
Packaging: Cut Tape (CT)
auf Bestellung 3811 Stücke:
Lieferzeit 10-14 Tag (e)
3+8.16 EUR
10+6.2 EUR
25+5.7 EUR
100+5.16 EUR
250+4.9 EUR
500+4.89 EUR
Mindestbestellmenge: 3 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
TLE98442QXXUMA1 TLE98442QXXUMA1 Infineon Technologies Infineon-TLE9844-2QX-DS-v01_00-EN.pdf?fileId=5546d46259d9a4bf015a84a1d6e97509 Description: IC MOTOR DRIVER 48VQFN
Packaging: Cut Tape (CT)
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: LIN, SSI, UART
RAM Size: 4K x 8
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 3V ~ 28V
Program Memory Type: FLASH (64kB)
Core Processor: ARM® Cortex®-M0
Supplier Device Package: PG-VQFN-48-31
Part Status: Active
Number of I/O: 10
DigiKey Programmable: Not Verified
Grade: Automotive
Qualification: AEC-Q100
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
3+7.9 EUR
10+5.99 EUR
25+5.51 EUR
100+4.99 EUR
250+4.74 EUR
500+4.58 EUR
1000+4.46 EUR
Mindestbestellmenge: 3 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
IRS20965STRPBF IRS20965STRPBF Infineon Technologies irs20965spbf.pdf?fileId=5546d462533600a4015356761d8b279b Description: IC AMP CLASS D MONO 16SOIC
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Output Type: 1-Channel (Mono)
Mounting Type: Surface Mount
Type: Class D
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 10V ~ 15V
Supplier Device Package: 16-SOIC
Part Status: Not For New Designs
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRFHS9351TRPBF IRFHS9351TRPBF Infineon Technologies irfhs9351pbf.pdf?fileId=5546d462533600a401535623a8d41f63 Description: MOSFET 2P-CH 30V 2.3A PQFN
Part Status: Active
Supplier Device Package: 6-PQFN Dual (2x2)
Vgs(th) (Max) @ Id: 2.4V @ 10µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 3.7nC @ 10V
Rds On (Max) @ Id, Vgs: 170mOhm @ 3.1A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 160pF @ 25V
Current - Continuous Drain (Id) @ 25°C: 2.3A
Drain to Source Voltage (Vdss): 30V
Power - Max: 1.4W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 P-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 6-PowerVDFN
Packaging: Cut Tape (CT)
auf Bestellung 2330 Stücke:
Lieferzeit 10-14 Tag (e)
12+1.87 EUR
18+1.17 EUR
100+0.76 EUR
500+0.58 EUR
1000+0.48 EUR
2000+0.46 EUR
Mindestbestellmenge: 12 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
BTS3142DNT BTS3142DNT Infineon Technologies Description: IC PWR SWITCH N-CHAN 1:1 TO252-3
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BTS118DNT BTS118DNT Infineon Technologies Description: IC PWR SWITCH N-CHAN 1:1 TO252-3
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BTS142DNT BTS142DNT Infineon Technologies Description: IC PWR SWITCH N-CHAN 1:1 TO252-3
Part Status: Obsolete
Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage
Supplier Device Package: PG-TO252-3-11
Ratio - Input:Output: 1:1
Current - Output (Max): 4.6A
Voltage - Supply (Vcc/Vdd): Not Required
Voltage - Load: 42V (Max)
Input Type: Non-Inverting
Rds On (Typ): 23mOhm
Output Configuration: Low Side
Operating Temperature: -40°C ~ 150°C (TJ)
Switch Type: General Purpose
Interface: On/Off
Number of Outputs: 1
Mounting Type: Surface Mount
Output Type: N-Channel
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Features: Auto Restart
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BTS3118DNT Infineon Technologies Description: IC PWR SWITCH N-CHAN 1:1 TO252-3
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BTS3134NXT BTS3134NXT Infineon Technologies Description: IC PWR SWTCH N-CHAN 1:1 SOT223-4
Part Status: Obsolete
Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage
Supplier Device Package: PG-SOT223-4
Ratio - Input:Output: 1:1
Current - Output (Max): 3A
Voltage - Supply (Vcc/Vdd): Not Required
Voltage - Load: 42V (Max)
Input Type: Non-Inverting
Rds On (Typ): 35mOhm
Output Configuration: Low Side
Operating Temperature: -40°C ~ 150°C (TJ)
Switch Type: General Purpose
Interface: On/Off
Number of Outputs: 1
Mounting Type: Surface Mount
Output Type: N-Channel
Package / Case: TO-261-4, TO-261AA
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
KIT6W12VBIASICE3TOBO1 KIT6W12VBIASICE3TOBO1 Infineon Technologies Infineon-General_description_KIT_6W_12V_BIAS_ICE3-ATI-v01_01-EN.pdf?fileId=5546d4625debb399015e28e45b1b3dde Description: EVAL BOARD FOR ICE3RBR4765JZ
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPLU300N04S4R7XTMA2 IPLU300N04S4R7XTMA2 Infineon Technologies IPLU300N04S4-R7-Datasheet.pdf Description: MOSFET N-CH 40V 300A 8HSOF
Grade: Automotive
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 22945 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 287 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: PG-HSOF-8-1
Vgs(th) (Max) @ Id: 4V @ 230µA
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 25
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10
Power Dissipation (Max): 429W (Tc)
Rds On (Max) @ Id, Vgs: 0.76mOhm @ 100A, 10V
Current - Continuous Drain (Id) @ 25°C: 300A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerSFN
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IKB10N60TATMA1 IKB10N60TATMA1 Infineon Technologies IKB10N60T+Rev2_3G.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a304412b407950112b428742d3dfe Description: IGBT NPT FS 600V 20A TO263-3-2
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 115 ns
Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 10A
Supplier Device Package: PG-TO263-3-2
IGBT Type: NPT, Trench Field Stop
Td (on/off) @ 25°C: 12ns/215ns
Switching Energy: 430µJ
Test Condition: 400V, 10A, 23Ohm, 15V
Gate Charge: 62 nC
Part Status: Active
Current - Collector (Ic) (Max): 20 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 30 A
Power - Max: 110 W
auf Bestellung 850 Stücke:
Lieferzeit 10-14 Tag (e)
4+5.24 EUR
10+3.38 EUR
100+2.32 EUR
500+1.87 EUR
Mindestbestellmenge: 4 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
BSZ0589NSATMA1 BSZ0589NSATMA1 Infineon Technologies Infineon-BSZ0589NS-DS-v02_00-EN.pdf?fileId=5546d46258fc0bc101598da704fa60e0 Description: MOSFET N-CH 30V 17A TSDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Ta)
Rds On (Max) @ Id, Vgs: 4.4mOhm @ 8A, 10V
Power Dissipation (Max): 2.1W (Ta)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TSDSON-8-FL
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 950 pF @ 15 V
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
520966231136 Infineon Technologies Description: IC FLASH NOR
DigiKey Programmable: Not Verified
Packaging: Tray
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
811600-73670880 Infineon Technologies Description: IC FLASH NOR
Packaging: Tray
Part Status: Obsolete
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TLV493DA1B6MS2GOTOBO1 TLV493DA1B6MS2GOTOBO1 Infineon Technologies Infineon-3D%20Magnetic%20Sensor-PB-v03_00-EN.pdf?fileId=5546d46261d5e6820161e7571b2b3dd0 Description: EVAL BOARD FOR TLV493D
Packaging: Box
Interface: USB
Voltage - Supply: 5V, USB
Sensor Type: Magnetic, Linear, Rotary Position
Utilized IC / Part: TLV493D-A1B6
Supplied Contents: Board(s)
Embedded: Yes, MCU, 32-Bit
Sensing Range: ±130mT
Part Status: Active
Contents: Board(s)
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPDD60R190G7XTMA1 IPDD60R190G7XTMA1 Infineon Technologies Infineon-IPDD60R190G7-DS-v02_00-EN.pdf?fileId=5546d4626102d35a01617087dc0f79ea Description: MOSFET N-CH 600V 13A HDSOP-10
Input Capacitance (Ciss) (Max) @ Vds: 718 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PG-HDSOP-10-1
Vgs(th) (Max) @ Id: 4V @ 210µA
Power Dissipation (Max): 76W (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 4.2A, 10V
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 10-PowerSOP Module
Packaging: Tape & Reel (TR)
auf Bestellung 1700 Stücke:
Lieferzeit 10-14 Tag (e)
1700+2.25 EUR
Mindestbestellmenge: 1700 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
IPDD60R125G7XTMA1 IPDD60R125G7XTMA1 Infineon Technologies Infineon-IPDD60R125G7-DS-v02_00-EN.pdf?fileId=5546d4626102d35a0161706cba27778f Description: MOSFET N-CH 600V 20A HDSOP-10
Vgs(th) (Max) @ Id: 4V @ 320µA
Power Dissipation (Max): 120W (Tc)
Rds On (Max) @ Id, Vgs: 125mOhm @ 6.4A, 10V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 10-PowerSOP Module
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 1080 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PG-HDSOP-10-1
Produkt ist nicht verfügbar
 Mindestbestellmenge: 1700 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
IPDD60R080G7XTMA1 IPDD60R080G7XTMA1 Infineon Technologies Infineon-IPDD60R080G7-DS-v02_00-EN.pdf?fileId=5546d4626102d35a016170882f757a07 Description: MOSFET N-CH 600V 29A HDSOP-10
Input Capacitance (Ciss) (Max) @ Vds: 1640 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PG-HDSOP-10-1
Vgs(th) (Max) @ Id: 4V @ 490µA
Power Dissipation (Max): 174W (Tc)
Rds On (Max) @ Id, Vgs: 80mOhm @ 9.7A, 10V
Current - Continuous Drain (Id) @ 25°C: 29A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 10-PowerSOP Module
Packaging: Tape & Reel (TR)
auf Bestellung 1700 Stücke:
Lieferzeit 10-14 Tag (e)
1700+5.72 EUR
Mindestbestellmenge: 1700 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
IPDD60R050G7XTMA1 IPDD60R050G7XTMA1 Infineon Technologies Infineon-IPDD60R050G7-DS-v02_00-EN.pdf?fileId=5546d4626102d35a0161707eb2f97810 Description: MOSFET N-CH 600V 47A HDSOP-10
Input Capacitance (Ciss) (Max) @ Vds: 2670 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PG-HDSOP-10-1
Vgs(th) (Max) @ Id: 4V @ 800µA
Power Dissipation (Max): 278W (Tc)
Rds On (Max) @ Id, Vgs: 50mOhm @ 15.9A, 10V
Current - Continuous Drain (Id) @ 25°C: 47A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 10-PowerSOP Module
Packaging: Tape & Reel (TR)
auf Bestellung 1700 Stücke:
Lieferzeit 10-14 Tag (e)
1700+8.69 EUR
Mindestbestellmenge: 1700 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
IPDD60R190G7XTMA1 IPDD60R190G7XTMA1 Infineon Technologies Infineon-IPDD60R190G7-DS-v02_00-EN.pdf?fileId=5546d4626102d35a01617087dc0f79ea Description: MOSFET N-CH 600V 13A HDSOP-10
Input Capacitance (Ciss) (Max) @ Vds: 718 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PG-HDSOP-10-1
Vgs(th) (Max) @ Id: 4V @ 210µA
Power Dissipation (Max): 76W (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 4.2A, 10V
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 10-PowerSOP Module
Packaging: Cut Tape (CT)
auf Bestellung 1968 Stücke:
Lieferzeit 10-14 Tag (e)
4+6.91 EUR
10+4.51 EUR
100+3.14 EUR
500+2.56 EUR
Mindestbestellmenge: 4 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
IPDD60R125G7XTMA1 IPDD60R125G7XTMA1 Infineon Technologies Infineon-IPDD60R125G7-DS-v02_00-EN.pdf?fileId=5546d4626102d35a0161706cba27778f Description: MOSFET N-CH 600V 20A HDSOP-10
Vgs(th) (Max) @ Id: 4V @ 320µA
Power Dissipation (Max): 120W (Tc)
Rds On (Max) @ Id, Vgs: 125mOhm @ 6.4A, 10V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 10-PowerSOP Module
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 1080 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PG-HDSOP-10-1
auf Bestellung 1085 Stücke:
Lieferzeit 10-14 Tag (e)
5+4.66 EUR
10+3.96 EUR
100+3.58 EUR
Mindestbestellmenge: 5 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
IPDD60R050G7XTMA1 IPDD60R050G7XTMA1 Infineon Technologies Infineon-IPDD60R050G7-DS-v02_00-EN.pdf?fileId=5546d4626102d35a0161707eb2f97810 Description: MOSFET N-CH 600V 47A HDSOP-10
Input Capacitance (Ciss) (Max) @ Vds: 2670 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PG-HDSOP-10-1
Vgs(th) (Max) @ Id: 4V @ 800µA
Power Dissipation (Max): 278W (Tc)
Rds On (Max) @ Id, Vgs: 50mOhm @ 15.9A, 10V
Current - Continuous Drain (Id) @ 25°C: 47A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 10-PowerSOP Module
Packaging: Cut Tape (CT)
auf Bestellung 1710 Stücke:
Lieferzeit 10-14 Tag (e)
2+20.06 EUR
10+13.82 EUR
100+10.63 EUR
Mindestbestellmenge: 2 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
IPN70R1K2P7SATMA1 IPN70R1K2P7SATMA1 Infineon Technologies Infineon-IPN70R1K2P7S-DS-v02_00-EN.pdf?fileId=5546d4625f2e26bc015f524b972d6b74 Description: MOSFET N-CH 700V 4.5A SOT223
Input Capacitance (Ciss) (Max) @ Vds: 174 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 4.8 nC @ 10 V
Drain to Source Voltage (Vdss): 700 V
Vgs (Max): ±16V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PG-SOT223
Vgs(th) (Max) @ Id: 3.5V @ 40µA
Power Dissipation (Max): 6.3W (Tc)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 900mA, 10V
Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Packaging: Cut Tape (CT)
auf Bestellung 1468 Stücke:
Lieferzeit 10-14 Tag (e)
19+1.15 EUR
22+1 EUR
100+0.69 EUR
500+0.57 EUR
1000+0.49 EUR
Mindestbestellmenge: 19 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
IPN70R2K0P7SATMA1 IPN70R2K0P7SATMA1 Infineon Technologies Infineon-IPN70R2K0P7S-DS-v02_00-EN.pdf?fileId=5546d4625f2e26bc015f526712fe6b76 Description: MOSFET N-CH 700V 3A SOT223
Input Capacitance (Ciss) (Max) @ Vds: 130 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 3.8 nC @ 10 V
Drain to Source Voltage (Vdss): 700 V
Vgs (Max): ±16V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PG-SOT223
Vgs(th) (Max) @ Id: 3.5V @ 30µA
Power Dissipation (Max): 6W (Tc)
Rds On (Max) @ Id, Vgs: 2Ohm @ 500mA, 10V
Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Packaging: Cut Tape (CT)
auf Bestellung 14553 Stücke:
Lieferzeit 10-14 Tag (e)
15+1.43 EUR
24+0.88 EUR
100+0.57 EUR
500+0.44 EUR
1000+0.39 EUR
Mindestbestellmenge: 15 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
IPN70R450P7SATMA1 IPN70R450P7SATMA1 Infineon Technologies Infineon-IPN70R450P7S-DS-v02_00-EN.pdf?fileId=5546d4625f2e26bc015f526728366b78 Description: MOSFET N-CH 700V 10A SOT223
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 450mOhm @ 2.3A, 10V
Power Dissipation (Max): 7.1W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 120µA
Supplier Device Package: PG-SOT223
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 13.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 424 pF @ 400 V
auf Bestellung 1290 Stücke:
Lieferzeit 10-14 Tag (e)
10+2.15 EUR
16+1.36 EUR
100+0.89 EUR
500+0.69 EUR
1000+0.63 EUR
Mindestbestellmenge: 10 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
IPN80R1K2P7ATMA1 IPN80R1K2P7ATMA1 Infineon Technologies infineon-ipn80r1k2p7-ds-en.pdf Description: MOSFET N-CH 800V 4.5A SOT223
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 1.7A, 10V
Power Dissipation (Max): 6.8W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 80µA
Supplier Device Package: PG-SOT223
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 300 pF @ 500 V
auf Bestellung 2912 Stücke:
Lieferzeit 10-14 Tag (e)
8+2.92 EUR
12+1.83 EUR
100+1.23 EUR
500+0.95 EUR
1000+0.87 EUR
Mindestbestellmenge: 8 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
IPN80R3K3P7ATMA1 IPN80R3K3P7ATMA1 Infineon Technologies infineon-ipn80r3k3p7-ds-en.pdf Description: MOSFET N-CH 800V 1.9A SOT223
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.9A (Tc)
Rds On (Max) @ Id, Vgs: 3.3Ohm @ 590mA, 10V
Power Dissipation (Max): 6.1W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 30µA
Supplier Device Package: PG-SOT223
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 5.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 120 pF @ 500 V
auf Bestellung 45 Stücke:
Lieferzeit 10-14 Tag (e)
11+2.05 EUR
17+1.29 EUR
Mindestbestellmenge: 11 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
1EDN7511BXUSA1 1EDN7511BXUSA1 Infineon Technologies Infineon-1EDN751x_1EDN851x_Rev%202.0-DS-v02_01-EN.pdf?fileId=5546d462576f34750157e176df0b3ca7 Description: IC GATE DRVR LOW-SIDE SOT23-6
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 4.5V ~ 20V
Input Type: Inverting, Non-Inverting
Supplier Device Package: PG-SOT23-6-2
Rise / Fall Time (Typ): 6.5ns, 4.5ns
Channel Type: Single
Driven Configuration: Low-Side
Number of Drivers: 1
Gate Type: N-Channel, P-Channel MOSFET
Logic Voltage - VIL, VIH: 1.2V, 1.9V
Current - Peak Output (Source, Sink): 4A, 8A
Part Status: Active
DigiKey Programmable: Not Verified
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.62 EUR
6000+0.61 EUR
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
1EDN8511BXUSA1 1EDN8511BXUSA1 Infineon Technologies Infineon-1EDN751x_1EDN851x_Rev+2.0-DS-v02_00-EN.pdf?fileId=5546d462576f34750157e176df0b3ca7 Description: IC GATE DRVR LOW-SIDE SOT23-6
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 8V ~ 20V
Input Type: Inverting, Non-Inverting
High Side Voltage - Max (Bootstrap): 200 V
Supplier Device Package: PG-SOT23-6-2
Rise / Fall Time (Typ): 6.5ns, 4.5ns
Channel Type: Single
Driven Configuration: Low-Side
Number of Drivers: 1
Gate Type: GaN FET, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 1.2V, 1.9V
Current - Peak Output (Source, Sink): 4A, 8A
DigiKey Programmable: Not Verified
auf Bestellung 12000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.57 EUR
6000+0.56 EUR
9000+0.55 EUR
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
2EDS8165HXUMA1 2EDS8165HXUMA1 Infineon Technologies Infineon-2EDF7175F-DS-v02_00-EN.pdf?fileId=5546d462636cc8fb0163b09026be3060 Description: IC GATE DRVR HALF-BRIDGE 16SOIC
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 20V
Input Type: Non-Inverting
Supplier Device Package: PG-DSO-16-30
Rise / Fall Time (Typ): 6.5ns, 4.5ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: MOSFET (N-Channel, P-Channel)
Logic Voltage - VIL, VIH: -, 1.65V
Current - Peak Output (Source, Sink): 1A, 2A
Part Status: Discontinued at Digi-Key
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
 Mindestbestellmenge: 1000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
BSC019N06NSATMA1 BSC019N06NSATMA1 Infineon Technologies Infineon-BSC019N06NS-DS-v02_01-EN.pdf?fileId=5546d462602a9dc80160546789c12ca7 Description: MOSFET N-CH 60V 100A TDSON-8 FL
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Ta)
Rds On (Max) @ Id, Vgs: 1.95mOhm @ 50A, 10V
Power Dissipation (Max): 136W (Ta)
Vgs(th) (Max) @ Id: 3.3V @ 74µA
Supplier Device Package: PG-TDSON-8 FL
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 77 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5250 pF @ 30 V
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)
5000+1.17 EUR
10000+1.14 EUR
Mindestbestellmenge: 5000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
DD171N16KKHOSA1 Infineon Technologies Description: THYR / DIODE MODULE DK
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
DZ435N40KS01HPSA1 DZ435N40KS01HPSA1 Infineon Technologies Infineon-DZ435N-DS-v03_02-EN.pdf?fileId=db3a3043243b5f170124e2ccd4426304 Description: DIODE GEN PURP 4KV 700A PB501-1
Produkt ist nicht verfügbar
 Mindestbestellmenge: 3 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
DZ950N44KS01HPSA1 DZ950N44KS01HPSA1 Infineon Technologies Infineon-DZ950N-DS-v01_00-en_de.pdf?fileId=db3a304412b407950112b43061c7502e Description: THYR / DIODE MODULE DK
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
FF1800R12IE5PBPSA1 FF1800R12IE5PBPSA1 Infineon Technologies Infineon-FF1800R12IE5-DS-v03_00-EN.pdf?fileId=5546d4625cc9456a015d07eef79f7f18 Description: IGBT MOD 1200V 1800A 20MW
Input Capacitance (Cies) @ Vce: 98.5 nF @ 25 V
Current - Collector Cutoff (Max): 5 mA
Power - Max: 20 mW
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 1800 A
Part Status: Active
IGBT Type: Trench Field Stop
Supplier Device Package: Module
NTC Thermistor: Yes
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 1800A
Operating Temperature: -40°C ~ 175°C (TJ)
Configuration: 2 Independent
Input: Standard
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Tray
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPD90N10S4L06ATMA1 Infineon-IPD90N10S4L_06-DS-v01_00-en.pdf?fileId=db3a3043372d5cc80137500063630512
IPD90N10S4L06ATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 100V 90A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 6.6mOhm @ 90A, 10V
Power Dissipation (Max): 136W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 90µA
Supplier Device Package: PG-TO252-3-313
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 98 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6250 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 5890 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
5+5.11 EUR
10+3.3 EUR
100+2.27 EUR
500+1.86 EUR
Mindestbestellmenge: 5 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
1EBN1001AEXUMA1 Infineon-1EBN1001AE-DS-v03_00-EN.pdf?fileId=5546d462503812bb01505fa4d89805a0
1EBN1001AEXUMA1
Hersteller: Infineon Technologies
Description: IC GATE DRVR HI/LOW SIDE 14SOIC
Packaging: Cut Tape (CT)
Package / Case: 14-SOIC (0.154", 3.90mm Width) Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 13V ~ 18V
High Side Voltage - Max (Bootstrap): 1200 V
Supplier Device Package: PG-DSO-14-43
Rise / Fall Time (Typ): 50ns, 90ns
Channel Type: Single
Driven Configuration: High-Side or Low-Side
Number of Drivers: 1
Gate Type: IGBT, MOSFET (N-Channel, P-Channel)
Logic Voltage - VIL, VIH: 1.5V, 3.5V
Grade: Automotive
Part Status: Active
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
auf Bestellung 4540 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
4+6.34 EUR
10+4.76 EUR
25+4.37 EUR
100+3.94 EUR
250+3.74 EUR
500+3.69 EUR
Mindestbestellmenge: 4 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
AUIRF5210STRL auirf5210s.pdf?fileId=5546d462533600a4015355acd8ce13c3
AUIRF5210STRL
Hersteller: Infineon Technologies
Description: MOSFET P-CH 100V 38A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 38A (Tc)
Rds On (Max) @ Id, Vgs: 60mOhm @ 38A, 10V
Power Dissipation (Max): 3.1W (Ta), 170W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Grade: Automotive
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 230 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2780 pF @ 25 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPD65R400CEAUMA1 Infineon-IPD65R400CE-DS-v02_00-EN.pdf?fileId=5546d462533600a401539eb64cd44f67
IPD65R400CEAUMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 650V 15.1A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15.1A (Tc)
Rds On (Max) @ Id, Vgs: 400mOhm @ 3.2A, 10V
Power Dissipation (Max): 118W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 320µA
Supplier Device Package: PG-TO252-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 710 pF @ 100 V
auf Bestellung 15243 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
7+3.01 EUR
12+1.9 EUR
100+1.26 EUR
500+1 EUR
1000+0.9 EUR
Mindestbestellmenge: 7 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
BTS3046SDLATMA1 Infineon-BTS3046SDL-DS-v01_00-EN.pdf?fileId=5546d4625a888733015aad821c9e4c21
BTS3046SDLATMA1
Hersteller: Infineon Technologies
Description: IC PWR SWITCH N-CHAN 1:1 TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Low Side
Rds On (Typ): 46mOhm
Input Type: Non-Inverting
Voltage - Load: 60V (Max)
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 3.6A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-TO252-3-11
Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage
Part Status: Active
auf Bestellung 5129 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
6+4.14 EUR
10+3.06 EUR
25+2.8 EUR
100+2.5 EUR
250+2.36 EUR
500+2.28 EUR
Mindestbestellmenge: 6 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
BSC0504NSIATMA1 Infineon-BSC0504NSI-DS-v02_00-EN.pdf?fileId=5546d4624eeb2bc7014f0286ff3c3d3d
BSC0504NSIATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 30V 21A/72A TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 72A (Tc)
Rds On (Max) @ Id, Vgs: 3.7mOhm @ 30A, 10V
Power Dissipation (Max): 2.5W (Ta), 30W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TDSON-8-6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 960 pF @ 15 V
auf Bestellung 34757 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
9+2.57 EUR
13+1.62 EUR
100+1.07 EUR
500+0.83 EUR
1000+0.75 EUR
2000+0.69 EUR
Mindestbestellmenge: 9 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
1ED020I12FTAXUMA2 infineon-1ed020i12-b2-datasheet-en.pdf
1ED020I12FTAXUMA2
Hersteller: Infineon Technologies
Description: DGT ISO 4.5KV 1CH GT DVR DSO20
Packaging: Cut Tape (CT)
Package / Case: 20-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Magnetic Coupling
Current - Output High, Low: 2A, 2A
Voltage - Isolation: 4500Vrms
Supplier Device Package: PG-DSO-20-55
Rise / Fall Time (Typ): 30ns, 20ns
Part Status: Not For New Designs
Number of Channels: 1
Voltage - Output Supply: 4.5V ~ 5.5V
auf Bestellung 2674 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2+14.93 EUR
10+11.55 EUR
25+10.71 EUR
100+9.78 EUR
250+9.54 EUR
Mindestbestellmenge: 2 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
TLE73683EXUMA2 Infineon-TLE7368-DS-v02_21-EN.pdf?fileId=5546d46258fc0bc1015969d271b041d1
TLE73683EXUMA2
Hersteller: Infineon Technologies
Description: IC REG AUTO APPL 3OUT DSO-36
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPB65R110CFDAATMA1 Infineon-IPX65R110CFDA-DS-v02_00-en.pdf?fileId=db3a304336797ff90136ba7c820925a5
IPB65R110CFDAATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 650V 31.2A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 31.2A (Tc)
Rds On (Max) @ Id, Vgs: 110mOhm @ 12.7A, 10V
Power Dissipation (Max): 277.8W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1.3mA
Supplier Device Package: PG-TO263-3
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 118 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3240 pF @ 100 V
Qualification: AEC-Q101
auf Bestellung 1682 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2+13.11 EUR
10+8.82 EUR
100+6.4 EUR
500+6.05 EUR
Mindestbestellmenge: 2 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
IPB180N08S402ATMA1 IPB180N08S4-02-Data-Sheet-10-Infineon.pdf?fileId=5546d4614755559a01475d701b54019c
IPB180N08S402ATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 80V 180A TO263-7
Packaging: Cut Tape (CT)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
Rds On (Max) @ Id, Vgs: 2.2mOhm @ 100A, 10V
Power Dissipation (Max): 277W (Tc)
Vgs(th) (Max) @ Id: 4V @ 220µA
Supplier Device Package: PG-TO263-7-3
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 167 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11550 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 33 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2+14.96 EUR
10+10.08 EUR
Mindestbestellmenge: 2 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
BSL308PEH6327XTSA1 Infineon-BSL308PE-DS-v02_03-en.pdf?fileId=db3a30431d8a6b3c011d8ff3592c03d0
BSL308PEH6327XTSA1
Hersteller: Infineon Technologies
Description: MOSFET 2P-CH 30V 2A TSOP6-6
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 500mW
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 2A
Input Capacitance (Ciss) (Max) @ Vds: 500pF @ 15V
Rds On (Max) @ Id, Vgs: 80mOhm @ 2A, 10V
Gate Charge (Qg) (Max) @ Vgs: 5nC @ 10V
FET Feature: Logic Level Gate, 4.5V Drive
Vgs(th) (Max) @ Id: 1V @ 11µA
Supplier Device Package: PG-TSOP6-6
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
auf Bestellung 17943 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
11+1.93 EUR
18+1.2 EUR
100+0.79 EUR
500+0.61 EUR
1000+0.55 EUR
Mindestbestellmenge: 11 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
BSS138WH6433XTMA1 Infineon-BSS138W-DS-v02_43-en.pdf?fileId=db3a304335113a6301351e62fcb4131f
BSS138WH6433XTMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 60V 280MA SOT323-3
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 280mA (Ta)
Rds On (Max) @ Id, Vgs: 3.5Ohm @ 200mA, 10V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 1.4V @ 26µA
Supplier Device Package: PG-SOT323
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 1.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 43 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 9275 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
32+0.67 EUR
53+0.4 EUR
100+0.25 EUR
500+0.19 EUR
1000+0.17 EUR
2000+0.14 EUR
5000+0.13 EUR
Mindestbestellmenge: 32 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
BSP125H6433XTMA1 Infineon-BSP125-DS-v02_02-en.pdf?fileId=db3a30433b47825b013b50cae9702806
BSP125H6433XTMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 600V 120MA SOT223-4
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120mA (Ta)
Power Dissipation (Max): 1.8W (Ta)
Vgs(th) (Max) @ Id: 2.3V @ 94µA
Supplier Device Package: PG-SOT223-4
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 6.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 150 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 11802 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
9+2.43 EUR
14+1.52 EUR
100+1 EUR
500+0.77 EUR
1000+0.7 EUR
2000+0.64 EUR
Mindestbestellmenge: 9 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
BSP716NH6327XTSA1 Infineon-BSP716N-DS-v02_00-en.pdf?fileId=db3a304341c1e4a10141da580f3529e9
BSP716NH6327XTSA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 75V 2.3A SOT223-4
Input Capacitance (Ciss) (Max) @ Vds: 315 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 13.1 nC @ 10 V
Drain to Source Voltage (Vdss): 75 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: PG-SOT223-4
Vgs(th) (Max) @ Id: 1.8V @ 218µA
Power Dissipation (Max): 1.8W (Ta)
Rds On (Max) @ Id, Vgs: 160mOhm @ 2.3A, 10V
Current - Continuous Drain (Id) @ 25°C: 2.3A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TLE9871QXA20XUMA2 Infineon-TLE9871QXA20-DS-v01_00-EN.pdf?fileId=5546d4625a888733015a89e33fad3f30
TLE9871QXA20XUMA2
Hersteller: Infineon Technologies
Description: IC SOC MOTOR DRIVER 48VQFN
Qualification: AEC-Q100
DigiKey Programmable: Not Verified
Number of I/O: 10
Grade: Automotive
Supplier Device Package: PG-VQFN-48-31
Core Processor: ARM® Cortex®-M3
Program Memory Type: FLASH (36kB)
Voltage - Supply: 5.5V ~ 28V
Operating Temperature: -40°C ~ 150°C
RAM Size: 3K x 8
Interface: SSI, UART
Mounting Type: Surface Mount
Package / Case: 48-VFQFN Exposed Pad
Packaging: Cut Tape (CT)
auf Bestellung 2490 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3+10.14 EUR
10+7.75 EUR
25+7.15 EUR
100+6.5 EUR
250+6.19 EUR
500+6 EUR
1000+5.84 EUR
Mindestbestellmenge: 3 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
TLE9877QXA20XUMA2 Infineon-TLE9877QXA20-DS-v01_00-EN.pdf?fileId=5546d4625a888733015a89d127563f28
TLE9877QXA20XUMA2
Hersteller: Infineon Technologies
Description: IC SOC MOTOR DRIVER 48VQFN
Number of I/O: 10
Part Status: Not For New Designs
Supplier Device Package: PG-VQFN-48-31
Core Processor: ARM® Cortex®-M3
Applications: Automotive
Program Memory Type: FLASH (64kB)
Voltage - Supply: 5.5V ~ 28V
Operating Temperature: -40°C ~ 150°C
RAM Size: 6K x 8
Interface: LIN, SSI, UART
Mounting Type: Surface Mount
Package / Case: 48-VFQFN Exposed Pad
Packaging: Cut Tape (CT)
auf Bestellung 225 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3+7.16 EUR
Mindestbestellmenge: 3 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
TLE9877QXA40XUMA2 Infineon-TLE987x-ProductBrief-PB-v01_00-EN.pdf?fileId=5546d46249a28d750149aee472032794
TLE9877QXA40XUMA2
Hersteller: Infineon Technologies
Description: IC SOC MOTOR DRIVER 48VQFN
Qualification: AEC-Q100
Grade: Automotive
DigiKey Programmable: Not Verified
Number of I/O: 10
Part Status: Active
Supplier Device Package: PG-VQFN-48-31
Core Processor: ARM® Cortex®-M3
Program Memory Type: FLASH (64kB)
Voltage - Supply: 5.5V ~ 28V
Operating Temperature: -40°C ~ 150°C
RAM Size: 6K x 8
Interface: LIN, SSI, UART
Mounting Type: Surface Mount
Package / Case: 48-VFQFN Exposed Pad
Packaging: Cut Tape (CT)
auf Bestellung 8017 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3+10.34 EUR
10+7.93 EUR
25+7.32 EUR
100+6.65 EUR
250+6.33 EUR
500+6.14 EUR
1000+5.99 EUR
Mindestbestellmenge: 3 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
TLE9877QXW40XUMA1 Infineon-TLE987x-ProductBrief-PB-v01_00-EN.pdf?fileId=5546d46249a28d750149aee472032794
TLE9877QXW40XUMA1
Hersteller: Infineon Technologies
Description: IC SOC MOTOR DRIVER 48VQFN
Qualification: AEC-Q100
Grade: Automotive
DigiKey Programmable: Not Verified
Number of I/O: 10
Part Status: Active
Supplier Device Package: PG-VQFN-48-29
Core Processor: ARM® Cortex®-M3
Program Memory Type: FLASH (64kB)
Voltage - Supply: 5.5V ~ 28V
Operating Temperature: -40°C ~ 175°C
RAM Size: 6K x 8
Interface: LIN, SSI, UART
Mounting Type: Surface Mount
Package / Case: 48-VFQFN Exposed Pad
Packaging: Cut Tape (CT)
auf Bestellung 3824 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2+10.86 EUR
10+8.34 EUR
25+7.71 EUR
100+7.01 EUR
250+6.68 EUR
500+6.47 EUR
1000+6.32 EUR
Mindestbestellmenge: 2 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
TLE9879QXA20XUMA2 Infineon-TLE9879QXA20-DS-v01_00-EN.pdf?fileId=5546d46259d9a4bf015a8473ba2274de
TLE9879QXA20XUMA2
Hersteller: Infineon Technologies
Description: IC SOC MOTOR DRIVER 48VQFN
DigiKey Programmable: Not Verified
Number of I/O: 10
Supplier Device Package: PG-VQFN-48-31
Core Processor: ARM® Cortex®-M3
Applications: Automotive
Program Memory Type: FLASH (128kB)
Voltage - Supply: 5.5V ~ 28V
Operating Temperature: -40°C ~ 150°C
RAM Size: 6K x 8
Interface: LIN, SSI, UART
Mounting Type: Surface Mount
Package / Case: 48-VFQFN Exposed Pad
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TLE9879QXW40XUMA1 Infineon-TLE987x-ProductBrief-PB-v01_00-EN.pdf?fileId=5546d46249a28d750149aee472032794
TLE9879QXW40XUMA1
Hersteller: Infineon Technologies
Description: IC SOC MOTOR DRIVER 48VQFN
Qualification: AEC-Q100
Grade: Automotive
DigiKey Programmable: Not Verified
Number of I/O: 10
Supplier Device Package: PG-VQFN-48-29
Core Processor: ARM® Cortex®-M3
Program Memory Type: FLASH (128kB)
Voltage - Supply: 5.5V ~ 28V
Operating Temperature: -40°C ~ 175°C
RAM Size: 6K x 8
Interface: LIN, SSI, UART
Mounting Type: Surface Mount
Package / Case: 48-VFQFN Exposed Pad
Packaging: Cut Tape (CT)
auf Bestellung 1730 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2+11.47 EUR
10+8.82 EUR
25+8.15 EUR
100+7.43 EUR
250+7.08 EUR
500+6.87 EUR
1000+6.69 EUR
Mindestbestellmenge: 2 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
TLE9867QXA40XUMA2 Infineon-TLE9867QXA40-DS-v01_00-EN.pdf?fileId=5546d4625a888733015a8a3f72423f48
TLE9867QXA40XUMA2
Hersteller: Infineon Technologies
Description: IC SOC MOTOR DRIVER 48VQFN
Qualification: AEC-Q100
DigiKey Programmable: Not Verified
Number of I/O: 10
Grade: Automotive
Supplier Device Package: VQFN-48-31
Core Processor: ARM® Cortex®-M3
Program Memory Type: FLASH (64kB)
Voltage - Supply: 5.5V ~ 28V
Operating Temperature: -40°C ~ 150°C
RAM Size: 6K x 8
Interface: LIN, SSI, UART
Mounting Type: Surface Mount
Package / Case: 48-VFQFN Exposed Pad
Packaging: Cut Tape (CT)
auf Bestellung 2336 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3+9.45 EUR
10+7.2 EUR
25+6.64 EUR
100+6.02 EUR
250+5.74 EUR
500+5.56 EUR
1000+5.41 EUR
Mindestbestellmenge: 3 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
TLE9867QXW20XUMA1 Infineon-TLE9867QXW20-DS-v01_00-EN.pdf?fileId=5546d4625b10283a015b2486a2e22e42
TLE9867QXW20XUMA1
Hersteller: Infineon Technologies
Description: IC SOC MOTOR DRIVER 48VQFN
Qualification: AEC-Q100
DigiKey Programmable: Not Verified
Number of I/O: 10
Grade: Automotive
Supplier Device Package: PG-VQFN-48-29
Core Processor: ARM® Cortex®-M3
Program Memory Type: FLASH (128kB)
Voltage - Supply: 5.5V ~ 28V
Operating Temperature: -40°C ~ 175°C
RAM Size: 6K x 8
Interface: LIN, SSI, UART
Mounting Type: Surface Mount
Package / Case: 48-VFQFN Exposed Pad
Packaging: Cut Tape (CT)
auf Bestellung 4079 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
4+5.59 EUR
10+5.58 EUR
Mindestbestellmenge: 4 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
TLE9869QXA20XUMA2 Infineon-TLE9869QXA20-DS-v01_00-EN.pdf?fileId=5546d4625a888733015a8a3614cd3f3c
TLE9869QXA20XUMA2
Hersteller: Infineon Technologies
Description: IC SOC MOTOR DRIVER 48VQFN
Qualification: AEC-Q100
Grade: Automotive
DigiKey Programmable: Not Verified
Number of I/O: 10
Supplier Device Package: PG-VQFN-48-31
Core Processor: ARM® Cortex®-M3
Program Memory Type: FLASH (128kB)
Voltage - Supply: 5.5V ~ 28V
Operating Temperature: -40°C ~ 150°C
RAM Size: 6K x 8
Interface: LIN, SSI, UART
Mounting Type: Surface Mount
Package / Case: 48-VFQFN Exposed Pad
Packaging: Cut Tape (CT)
auf Bestellung 3338 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
4+5.62 EUR
10+5.6 EUR
Mindestbestellmenge: 4 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
TLE98432QXXUMA1 Infineon-TLE9843-2QX-DS-v01_00-EN.pdf?fileId=5546d4625a888733015a893e5eaf029b
TLE98432QXXUMA1
Hersteller: Infineon Technologies
Description: EMBEDDED POWER
Number of I/O: 10
Part Status: Active
Supplier Device Package: PG-VQFN-48-31
Core Processor: ARM® Cortex®-M0
Program Memory Type: FLASH (52kB)
Voltage - Supply: 3V ~ 28V
Operating Temperature: -40°C ~ 150°C (TJ)
RAM Size: 4K x 8
Interface: LIN, SSI, UART
Mounting Type: Surface Mount
Package / Case: 48-VFQFN Exposed Pad
Packaging: Cut Tape (CT)
Qualification: AEC-Q100
Grade: Automotive
DigiKey Programmable: Not Verified
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3+7.85 EUR
10+5.95 EUR
25+5.47 EUR
100+4.95 EUR
250+4.71 EUR
500+4.56 EUR
1000+4.44 EUR
Mindestbestellmenge: 3 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
TLE98422QXXUMA1 Infineon-TLE9842-2QX-DS-v01_00-EN.pdf?fileId=5546d46259d9a4bf015a84aabc5f7511
TLE98422QXXUMA1
Hersteller: Infineon Technologies
Description: EMBEDDED POWER
Qualification: AEC-Q100
DigiKey Programmable: Not Verified
Number of I/O: 10
Grade: Automotive
Supplier Device Package: PG-VQFN-48-31
Core Processor: ARM® Cortex®-M0
Program Memory Type: FLASH (40kB)
Voltage - Supply: 3V ~ 28V
Operating Temperature: -40°C ~ 150°C (TJ)
RAM Size: 2K x 8
Interface: LIN, SSI, UART
Mounting Type: Surface Mount
Package / Case: 48-VFQFN Exposed Pad
Packaging: Cut Tape (CT)
auf Bestellung 3811 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3+8.16 EUR
10+6.2 EUR
25+5.7 EUR
100+5.16 EUR
250+4.9 EUR
500+4.89 EUR
Mindestbestellmenge: 3 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
TLE98442QXXUMA1 Infineon-TLE9844-2QX-DS-v01_00-EN.pdf?fileId=5546d46259d9a4bf015a84a1d6e97509
TLE98442QXXUMA1
Hersteller: Infineon Technologies
Description: IC MOTOR DRIVER 48VQFN
Packaging: Cut Tape (CT)
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: LIN, SSI, UART
RAM Size: 4K x 8
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 3V ~ 28V
Program Memory Type: FLASH (64kB)
Core Processor: ARM® Cortex®-M0
Supplier Device Package: PG-VQFN-48-31
Part Status: Active
Number of I/O: 10
DigiKey Programmable: Not Verified
Grade: Automotive
Qualification: AEC-Q100
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3+7.9 EUR
10+5.99 EUR
25+5.51 EUR
100+4.99 EUR
250+4.74 EUR
500+4.58 EUR
1000+4.46 EUR
Mindestbestellmenge: 3 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
IRS20965STRPBF irs20965spbf.pdf?fileId=5546d462533600a4015356761d8b279b
IRS20965STRPBF
Hersteller: Infineon Technologies
Description: IC AMP CLASS D MONO 16SOIC
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Output Type: 1-Channel (Mono)
Mounting Type: Surface Mount
Type: Class D
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 10V ~ 15V
Supplier Device Package: 16-SOIC
Part Status: Not For New Designs
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRFHS9351TRPBF irfhs9351pbf.pdf?fileId=5546d462533600a401535623a8d41f63
IRFHS9351TRPBF
Hersteller: Infineon Technologies
Description: MOSFET 2P-CH 30V 2.3A PQFN
Part Status: Active
Supplier Device Package: 6-PQFN Dual (2x2)
Vgs(th) (Max) @ Id: 2.4V @ 10µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 3.7nC @ 10V
Rds On (Max) @ Id, Vgs: 170mOhm @ 3.1A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 160pF @ 25V
Current - Continuous Drain (Id) @ 25°C: 2.3A
Drain to Source Voltage (Vdss): 30V
Power - Max: 1.4W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 P-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 6-PowerVDFN
Packaging: Cut Tape (CT)
auf Bestellung 2330 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
12+1.87 EUR
18+1.17 EUR
100+0.76 EUR
500+0.58 EUR
1000+0.48 EUR
2000+0.46 EUR
Mindestbestellmenge: 12 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
BTS3142DNT
BTS3142DNT
Hersteller: Infineon Technologies
Description: IC PWR SWITCH N-CHAN 1:1 TO252-3
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BTS118DNT
BTS118DNT
Hersteller: Infineon Technologies
Description: IC PWR SWITCH N-CHAN 1:1 TO252-3
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BTS142DNT
BTS142DNT
Hersteller: Infineon Technologies
Description: IC PWR SWITCH N-CHAN 1:1 TO252-3
Part Status: Obsolete
Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage
Supplier Device Package: PG-TO252-3-11
Ratio - Input:Output: 1:1
Current - Output (Max): 4.6A
Voltage - Supply (Vcc/Vdd): Not Required
Voltage - Load: 42V (Max)
Input Type: Non-Inverting
Rds On (Typ): 23mOhm
Output Configuration: Low Side
Operating Temperature: -40°C ~ 150°C (TJ)
Switch Type: General Purpose
Interface: On/Off
Number of Outputs: 1
Mounting Type: Surface Mount
Output Type: N-Channel
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Features: Auto Restart
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BTS3118DNT
Hersteller: Infineon Technologies
Description: IC PWR SWITCH N-CHAN 1:1 TO252-3
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BTS3134NXT
BTS3134NXT
Hersteller: Infineon Technologies
Description: IC PWR SWTCH N-CHAN 1:1 SOT223-4
Part Status: Obsolete
Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage
Supplier Device Package: PG-SOT223-4
Ratio - Input:Output: 1:1
Current - Output (Max): 3A
Voltage - Supply (Vcc/Vdd): Not Required
Voltage - Load: 42V (Max)
Input Type: Non-Inverting
Rds On (Typ): 35mOhm
Output Configuration: Low Side
Operating Temperature: -40°C ~ 150°C (TJ)
Switch Type: General Purpose
Interface: On/Off
Number of Outputs: 1
Mounting Type: Surface Mount
Output Type: N-Channel
Package / Case: TO-261-4, TO-261AA
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
KIT6W12VBIASICE3TOBO1 Infineon-General_description_KIT_6W_12V_BIAS_ICE3-ATI-v01_01-EN.pdf?fileId=5546d4625debb399015e28e45b1b3dde
KIT6W12VBIASICE3TOBO1
Hersteller: Infineon Technologies
Description: EVAL BOARD FOR ICE3RBR4765JZ
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPLU300N04S4R7XTMA2 IPLU300N04S4-R7-Datasheet.pdf
IPLU300N04S4R7XTMA2
Hersteller: Infineon Technologies
Description: MOSFET N-CH 40V 300A 8HSOF
Grade: Automotive
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 22945 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 287 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: PG-HSOF-8-1
Vgs(th) (Max) @ Id: 4V @ 230µA
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 25
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10
Power Dissipation (Max): 429W (Tc)
Rds On (Max) @ Id, Vgs: 0.76mOhm @ 100A, 10V
Current - Continuous Drain (Id) @ 25°C: 300A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerSFN
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IKB10N60TATMA1 IKB10N60T+Rev2_3G.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a304412b407950112b428742d3dfe
IKB10N60TATMA1
Hersteller: Infineon Technologies
Description: IGBT NPT FS 600V 20A TO263-3-2
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 115 ns
Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 10A
Supplier Device Package: PG-TO263-3-2
IGBT Type: NPT, Trench Field Stop
Td (on/off) @ 25°C: 12ns/215ns
Switching Energy: 430µJ
Test Condition: 400V, 10A, 23Ohm, 15V
Gate Charge: 62 nC
Part Status: Active
Current - Collector (Ic) (Max): 20 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 30 A
Power - Max: 110 W
auf Bestellung 850 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
4+5.24 EUR
10+3.38 EUR
100+2.32 EUR
500+1.87 EUR
Mindestbestellmenge: 4 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
BSZ0589NSATMA1 Infineon-BSZ0589NS-DS-v02_00-EN.pdf?fileId=5546d46258fc0bc101598da704fa60e0
BSZ0589NSATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 30V 17A TSDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Ta)
Rds On (Max) @ Id, Vgs: 4.4mOhm @ 8A, 10V
Power Dissipation (Max): 2.1W (Ta)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TSDSON-8-FL
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 950 pF @ 15 V
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
520966231136
Hersteller: Infineon Technologies
Description: IC FLASH NOR
DigiKey Programmable: Not Verified
Packaging: Tray
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
811600-73670880
Hersteller: Infineon Technologies
Description: IC FLASH NOR
Packaging: Tray
Part Status: Obsolete
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TLV493DA1B6MS2GOTOBO1 Infineon-3D%20Magnetic%20Sensor-PB-v03_00-EN.pdf?fileId=5546d46261d5e6820161e7571b2b3dd0
TLV493DA1B6MS2GOTOBO1
Hersteller: Infineon Technologies
Description: EVAL BOARD FOR TLV493D
Packaging: Box
Interface: USB
Voltage - Supply: 5V, USB
Sensor Type: Magnetic, Linear, Rotary Position
Utilized IC / Part: TLV493D-A1B6
Supplied Contents: Board(s)
Embedded: Yes, MCU, 32-Bit
Sensing Range: ±130mT
Part Status: Active
Contents: Board(s)
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPDD60R190G7XTMA1 Infineon-IPDD60R190G7-DS-v02_00-EN.pdf?fileId=5546d4626102d35a01617087dc0f79ea
IPDD60R190G7XTMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 600V 13A HDSOP-10
Input Capacitance (Ciss) (Max) @ Vds: 718 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PG-HDSOP-10-1
Vgs(th) (Max) @ Id: 4V @ 210µA
Power Dissipation (Max): 76W (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 4.2A, 10V
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 10-PowerSOP Module
Packaging: Tape & Reel (TR)
auf Bestellung 1700 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1700+2.25 EUR
Mindestbestellmenge: 1700 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
IPDD60R125G7XTMA1 Infineon-IPDD60R125G7-DS-v02_00-EN.pdf?fileId=5546d4626102d35a0161706cba27778f
IPDD60R125G7XTMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 600V 20A HDSOP-10
Vgs(th) (Max) @ Id: 4V @ 320µA
Power Dissipation (Max): 120W (Tc)
Rds On (Max) @ Id, Vgs: 125mOhm @ 6.4A, 10V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 10-PowerSOP Module
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 1080 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PG-HDSOP-10-1
Produkt ist nicht verfügbar
Mindestbestellmenge: 1700 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
IPDD60R080G7XTMA1 Infineon-IPDD60R080G7-DS-v02_00-EN.pdf?fileId=5546d4626102d35a016170882f757a07
IPDD60R080G7XTMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 600V 29A HDSOP-10
Input Capacitance (Ciss) (Max) @ Vds: 1640 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PG-HDSOP-10-1
Vgs(th) (Max) @ Id: 4V @ 490µA
Power Dissipation (Max): 174W (Tc)
Rds On (Max) @ Id, Vgs: 80mOhm @ 9.7A, 10V
Current - Continuous Drain (Id) @ 25°C: 29A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 10-PowerSOP Module
Packaging: Tape & Reel (TR)
auf Bestellung 1700 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1700+5.72 EUR
Mindestbestellmenge: 1700 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
IPDD60R050G7XTMA1 Infineon-IPDD60R050G7-DS-v02_00-EN.pdf?fileId=5546d4626102d35a0161707eb2f97810
IPDD60R050G7XTMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 600V 47A HDSOP-10
Input Capacitance (Ciss) (Max) @ Vds: 2670 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PG-HDSOP-10-1
Vgs(th) (Max) @ Id: 4V @ 800µA
Power Dissipation (Max): 278W (Tc)
Rds On (Max) @ Id, Vgs: 50mOhm @ 15.9A, 10V
Current - Continuous Drain (Id) @ 25°C: 47A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 10-PowerSOP Module
Packaging: Tape & Reel (TR)
auf Bestellung 1700 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1700+8.69 EUR
Mindestbestellmenge: 1700 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
IPDD60R190G7XTMA1 Infineon-IPDD60R190G7-DS-v02_00-EN.pdf?fileId=5546d4626102d35a01617087dc0f79ea
IPDD60R190G7XTMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 600V 13A HDSOP-10
Input Capacitance (Ciss) (Max) @ Vds: 718 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PG-HDSOP-10-1
Vgs(th) (Max) @ Id: 4V @ 210µA
Power Dissipation (Max): 76W (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 4.2A, 10V
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 10-PowerSOP Module
Packaging: Cut Tape (CT)
auf Bestellung 1968 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
4+6.91 EUR
10+4.51 EUR
100+3.14 EUR
500+2.56 EUR
Mindestbestellmenge: 4 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
IPDD60R125G7XTMA1 Infineon-IPDD60R125G7-DS-v02_00-EN.pdf?fileId=5546d4626102d35a0161706cba27778f
IPDD60R125G7XTMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 600V 20A HDSOP-10
Vgs(th) (Max) @ Id: 4V @ 320µA
Power Dissipation (Max): 120W (Tc)
Rds On (Max) @ Id, Vgs: 125mOhm @ 6.4A, 10V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 10-PowerSOP Module
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 1080 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PG-HDSOP-10-1
auf Bestellung 1085 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
5+4.66 EUR
10+3.96 EUR
100+3.58 EUR
Mindestbestellmenge: 5 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
IPDD60R050G7XTMA1 Infineon-IPDD60R050G7-DS-v02_00-EN.pdf?fileId=5546d4626102d35a0161707eb2f97810
IPDD60R050G7XTMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 600V 47A HDSOP-10
Input Capacitance (Ciss) (Max) @ Vds: 2670 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PG-HDSOP-10-1
Vgs(th) (Max) @ Id: 4V @ 800µA
Power Dissipation (Max): 278W (Tc)
Rds On (Max) @ Id, Vgs: 50mOhm @ 15.9A, 10V
Current - Continuous Drain (Id) @ 25°C: 47A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 10-PowerSOP Module
Packaging: Cut Tape (CT)
auf Bestellung 1710 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2+20.06 EUR
10+13.82 EUR
100+10.63 EUR
Mindestbestellmenge: 2 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
IPN70R1K2P7SATMA1 Infineon-IPN70R1K2P7S-DS-v02_00-EN.pdf?fileId=5546d4625f2e26bc015f524b972d6b74
IPN70R1K2P7SATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 700V 4.5A SOT223
Input Capacitance (Ciss) (Max) @ Vds: 174 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 4.8 nC @ 10 V
Drain to Source Voltage (Vdss): 700 V
Vgs (Max): ±16V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PG-SOT223
Vgs(th) (Max) @ Id: 3.5V @ 40µA
Power Dissipation (Max): 6.3W (Tc)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 900mA, 10V
Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Packaging: Cut Tape (CT)
auf Bestellung 1468 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
19+1.15 EUR
22+1 EUR
100+0.69 EUR
500+0.57 EUR
1000+0.49 EUR
Mindestbestellmenge: 19 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
IPN70R2K0P7SATMA1 Infineon-IPN70R2K0P7S-DS-v02_00-EN.pdf?fileId=5546d4625f2e26bc015f526712fe6b76
IPN70R2K0P7SATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 700V 3A SOT223
Input Capacitance (Ciss) (Max) @ Vds: 130 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 3.8 nC @ 10 V
Drain to Source Voltage (Vdss): 700 V
Vgs (Max): ±16V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PG-SOT223
Vgs(th) (Max) @ Id: 3.5V @ 30µA
Power Dissipation (Max): 6W (Tc)
Rds On (Max) @ Id, Vgs: 2Ohm @ 500mA, 10V
Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Packaging: Cut Tape (CT)
auf Bestellung 14553 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
15+1.43 EUR
24+0.88 EUR
100+0.57 EUR
500+0.44 EUR
1000+0.39 EUR
Mindestbestellmenge: 15 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
IPN70R450P7SATMA1 Infineon-IPN70R450P7S-DS-v02_00-EN.pdf?fileId=5546d4625f2e26bc015f526728366b78
IPN70R450P7SATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 700V 10A SOT223
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 450mOhm @ 2.3A, 10V
Power Dissipation (Max): 7.1W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 120µA
Supplier Device Package: PG-SOT223
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 13.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 424 pF @ 400 V
auf Bestellung 1290 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
10+2.15 EUR
16+1.36 EUR
100+0.89 EUR
500+0.69 EUR
1000+0.63 EUR
Mindestbestellmenge: 10 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
IPN80R1K2P7ATMA1 infineon-ipn80r1k2p7-ds-en.pdf
IPN80R1K2P7ATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 800V 4.5A SOT223
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 1.7A, 10V
Power Dissipation (Max): 6.8W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 80µA
Supplier Device Package: PG-SOT223
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 300 pF @ 500 V
auf Bestellung 2912 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
8+2.92 EUR
12+1.83 EUR
100+1.23 EUR
500+0.95 EUR
1000+0.87 EUR
Mindestbestellmenge: 8 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
IPN80R3K3P7ATMA1 infineon-ipn80r3k3p7-ds-en.pdf
IPN80R3K3P7ATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 800V 1.9A SOT223
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.9A (Tc)
Rds On (Max) @ Id, Vgs: 3.3Ohm @ 590mA, 10V
Power Dissipation (Max): 6.1W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 30µA
Supplier Device Package: PG-SOT223
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 5.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 120 pF @ 500 V
auf Bestellung 45 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
11+2.05 EUR
17+1.29 EUR
Mindestbestellmenge: 11 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
1EDN7511BXUSA1 Infineon-1EDN751x_1EDN851x_Rev%202.0-DS-v02_01-EN.pdf?fileId=5546d462576f34750157e176df0b3ca7
1EDN7511BXUSA1
Hersteller: Infineon Technologies
Description: IC GATE DRVR LOW-SIDE SOT23-6
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 4.5V ~ 20V
Input Type: Inverting, Non-Inverting
Supplier Device Package: PG-SOT23-6-2
Rise / Fall Time (Typ): 6.5ns, 4.5ns
Channel Type: Single
Driven Configuration: Low-Side
Number of Drivers: 1
Gate Type: N-Channel, P-Channel MOSFET
Logic Voltage - VIL, VIH: 1.2V, 1.9V
Current - Peak Output (Source, Sink): 4A, 8A
Part Status: Active
DigiKey Programmable: Not Verified
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3000+0.62 EUR
6000+0.61 EUR
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
1EDN8511BXUSA1 Infineon-1EDN751x_1EDN851x_Rev+2.0-DS-v02_00-EN.pdf?fileId=5546d462576f34750157e176df0b3ca7
1EDN8511BXUSA1
Hersteller: Infineon Technologies
Description: IC GATE DRVR LOW-SIDE SOT23-6
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 8V ~ 20V
Input Type: Inverting, Non-Inverting
High Side Voltage - Max (Bootstrap): 200 V
Supplier Device Package: PG-SOT23-6-2
Rise / Fall Time (Typ): 6.5ns, 4.5ns
Channel Type: Single
Driven Configuration: Low-Side
Number of Drivers: 1
Gate Type: GaN FET, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 1.2V, 1.9V
Current - Peak Output (Source, Sink): 4A, 8A
DigiKey Programmable: Not Verified
auf Bestellung 12000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3000+0.57 EUR
6000+0.56 EUR
9000+0.55 EUR
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
2EDS8165HXUMA1 Infineon-2EDF7175F-DS-v02_00-EN.pdf?fileId=5546d462636cc8fb0163b09026be3060
2EDS8165HXUMA1
Hersteller: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 16SOIC
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 20V
Input Type: Non-Inverting
Supplier Device Package: PG-DSO-16-30
Rise / Fall Time (Typ): 6.5ns, 4.5ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: MOSFET (N-Channel, P-Channel)
Logic Voltage - VIL, VIH: -, 1.65V
Current - Peak Output (Source, Sink): 1A, 2A
Part Status: Discontinued at Digi-Key
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
BSC019N06NSATMA1 Infineon-BSC019N06NS-DS-v02_01-EN.pdf?fileId=5546d462602a9dc80160546789c12ca7
BSC019N06NSATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 60V 100A TDSON-8 FL
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Ta)
Rds On (Max) @ Id, Vgs: 1.95mOhm @ 50A, 10V
Power Dissipation (Max): 136W (Ta)
Vgs(th) (Max) @ Id: 3.3V @ 74µA
Supplier Device Package: PG-TDSON-8 FL
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 77 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5250 pF @ 30 V
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
5000+1.17 EUR
10000+1.14 EUR
Mindestbestellmenge: 5000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
DD171N16KKHOSA1
Hersteller: Infineon Technologies
Description: THYR / DIODE MODULE DK
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
DZ435N40KS01HPSA1 Infineon-DZ435N-DS-v03_02-EN.pdf?fileId=db3a3043243b5f170124e2ccd4426304
DZ435N40KS01HPSA1
Hersteller: Infineon Technologies
Description: DIODE GEN PURP 4KV 700A PB501-1
Produkt ist nicht verfügbar
Mindestbestellmenge: 3 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
DZ950N44KS01HPSA1 Infineon-DZ950N-DS-v01_00-en_de.pdf?fileId=db3a304412b407950112b43061c7502e
DZ950N44KS01HPSA1
Hersteller: Infineon Technologies
Description: THYR / DIODE MODULE DK
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
FF1800R12IE5PBPSA1 Infineon-FF1800R12IE5-DS-v03_00-EN.pdf?fileId=5546d4625cc9456a015d07eef79f7f18
FF1800R12IE5PBPSA1
Hersteller: Infineon Technologies
Description: IGBT MOD 1200V 1800A 20MW
Input Capacitance (Cies) @ Vce: 98.5 nF @ 25 V
Current - Collector Cutoff (Max): 5 mA
Power - Max: 20 mW
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 1800 A
Part Status: Active
IGBT Type: Trench Field Stop
Supplier Device Package: Module
NTC Thermistor: Yes
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 1800A
Operating Temperature: -40°C ~ 175°C (TJ)
Configuration: 2 Independent
Input: Standard
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Tray
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
Wählen Sie Seite:   [  << Vorherige Seite ]  1 207 304 305 306 307 308 309 310 311 312 313 314 414 621 828 1035 1242 1449 1656 1863 2070 2079  [ Nächste Seite >> ]