Produkte > INFINEON TECHNOLOGIES > Alle Produkte des Herstellers INFINEON TECHNOLOGIES (126506) > Seite 2109 nach 2109
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
BSS169H6906XTSA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 100V; 170mA; 360mW; SOT23 Case: SOT23 Mounting: SMD Polarisation: unipolar Technology: SIPMOS™ Drain current: 0.17A Drain-source voltage: 100V Application: automotive industry Type of transistor: N-MOSFET On-state resistance: 2.9Ω Power dissipation: 0.36W Gate charge: 2.8nC |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||
|
IPP037N08N3GXKSA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 80V; 100A; 214W; PG-TO220-3 Type of transistor: N-MOSFET Technology: OptiMOS™ 3 Polarisation: unipolar Drain-source voltage: 80V Drain current: 100A Power dissipation: 214W Case: PG-TO220-3 Gate-source voltage: ±20V On-state resistance: 3.7mΩ Mounting: THT Kind of package: tube Kind of channel: enhancement |
auf Bestellung 348 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||
|
IPP019N08NF2SAKMA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 80V; 147A; Idm: 764A; 250W Type of transistor: N-MOSFET Technology: StrongIRFET™ 2 Polarisation: unipolar Drain-source voltage: 80V Drain current: 147A Power dissipation: 250W Case: PG-TO220-3 Gate-source voltage: ±20V On-state resistance: 1.9mΩ Mounting: THT Kind of package: tube Kind of channel: enhancement Pulsed drain current: 764A Gate charge: 124nC |
auf Bestellung 118 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||
|
IPP020N08N5AKSA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 80V; 120A; 375W; PG-TO220-3 Type of transistor: N-MOSFET Technology: OptiMOS™ 5 Polarisation: unipolar Drain-source voltage: 80V Drain current: 120A Power dissipation: 375W Case: PG-TO220-3 Gate-source voltage: ±20V On-state resistance: 2mΩ Mounting: THT Kind of package: tube Kind of channel: enhancement |
auf Bestellung 15 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||
|
IPP023N08N5AKSA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 80V; 120A; 375W; PG-TO220-3 Type of transistor: N-MOSFET Technology: OptiMOS™ 5 Polarisation: unipolar Drain-source voltage: 80V Drain current: 120A Power dissipation: 375W Case: PG-TO220-3 Gate-source voltage: ±20V On-state resistance: 2.3mΩ Mounting: THT Kind of package: tube Kind of channel: enhancement |
auf Bestellung 400 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||
|
IPA057N08N3GXKSA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 80V; 60A; 39W; TO220FP Type of transistor: N-MOSFET Technology: OptiMOS™ 3 Polarisation: unipolar Drain-source voltage: 80V Drain current: 60A Power dissipation: 39W Case: TO220FP Gate-source voltage: ±20V On-state resistance: 5.7mΩ Mounting: THT Kind of package: tube Kind of channel: enhancement |
auf Bestellung 98 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||
|
BSC037N08NS5ATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 80V; 100A; 114W; PG-TDSON-8 Type of transistor: N-MOSFET Technology: OptiMOS™ 5 Polarisation: unipolar Drain-source voltage: 80V Drain current: 100A Power dissipation: 114W Case: PG-TDSON-8 Gate-source voltage: ±20V On-state resistance: 3.7mΩ Mounting: SMD Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 5000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||
|
BSC061N08NS5ATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 80V; 82A; 74W; PG-TDSON-8 Type of transistor: N-MOSFET Technology: OptiMOS™ 5 Polarisation: unipolar Drain-source voltage: 80V Drain current: 82A Power dissipation: 74W Case: PG-TDSON-8 Gate-source voltage: ±20V On-state resistance: 6.1mΩ Mounting: SMD Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 5000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||
|
BSC117N08NS5ATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 80V; 49A; 50W; PG-TDSON-8 Type of transistor: N-MOSFET Technology: OptiMOS™ 5 Polarisation: unipolar Drain-source voltage: 80V Drain current: 49A Power dissipation: 50W Case: PG-TDSON-8 Gate-source voltage: ±20V On-state resistance: 11.7mΩ Mounting: SMD Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 5000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||
|
BSC057N08NS3GATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 80V; 100A; 114W; PG-TDSON-8 Type of transistor: N-MOSFET Technology: OptiMOS™ 3 Polarisation: unipolar Drain-source voltage: 80V Drain current: 100A Power dissipation: 114W Case: PG-TDSON-8 Gate-source voltage: ±20V On-state resistance: 5.7mΩ Mounting: SMD Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 5000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||
|
BSZ123N08NS3GATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 80V; 40A; 66W; PG-TSDSON-8 Type of transistor: N-MOSFET Technology: OptiMOS™ 3 Polarisation: unipolar Drain-source voltage: 80V Drain current: 40A Power dissipation: 66W Case: PG-TSDSON-8 Gate-source voltage: ±20V On-state resistance: 12.3mΩ Mounting: SMD Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 5000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||
|
BSC040N08NS5ATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 80V; 100A; 104W; PG-TDSON-8 Type of transistor: N-MOSFET Technology: OptiMOS™ 5 Polarisation: unipolar Drain-source voltage: 80V Drain current: 100A Power dissipation: 104W Case: PG-TDSON-8 Gate-source voltage: ±20V On-state resistance: 4mΩ Mounting: SMD Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 5000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||
|
IPP016N08NF2SAKMA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 80V; 196A; 300W; TO220-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 80V Drain current: 196A Power dissipation: 300W Case: TO220-3 On-state resistance: 1.6mΩ Mounting: THT Kind of channel: enhancement Gate charge: 170nC |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||
|
IPP055N08NF2SAKMA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 80V; 99A; 107W; TO220-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 80V Drain current: 99A Power dissipation: 107W Case: TO220-3 On-state resistance: 5.5mΩ Mounting: THT Kind of channel: enhancement Gate charge: 36nC |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||
|
BSZ340N08NS3GATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 80V; 23A; 32W; PG-TSDSON-8 Type of transistor: N-MOSFET Technology: OptiMOS™ 3 Polarisation: unipolar Drain-source voltage: 80V Drain current: 23A Power dissipation: 32W Case: PG-TSDSON-8 Gate-source voltage: ±20V On-state resistance: 34mΩ Mounting: SMD Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 5000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||
|
IPA052N08NM5SXKSA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 80V; 46A; Idm: 256A; 38W; TO220FP Type of transistor: N-MOSFET Technology: OptiMOS™ 3 Polarisation: unipolar Drain-source voltage: 80V Drain current: 46A Power dissipation: 38W Case: TO220FP Gate-source voltage: ±20V On-state resistance: 5.2mΩ Mounting: THT Kind of package: tube Kind of channel: enhancement Pulsed drain current: 256A |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||
|
IPD053N08N3GATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 80V; 90A; 150W; DPAK,TO252 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 80V Drain current: 90A Power dissipation: 150W Case: DPAK; TO252 On-state resistance: 5.3mΩ Mounting: SMD Kind of channel: enhancement Gate charge: 52nC |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||
|
IPD135N08N3GATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 80V; 45A; 79W; DPAK,TO252 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 80V Drain current: 45A Power dissipation: 79W Case: DPAK; TO252 On-state resistance: 13.5mΩ Mounting: SMD Kind of channel: enhancement Gate charge: 25nC |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||
| IPF014N08NF2SATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 80V; 282A; 300W; D2PAK-7 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 80V Drain current: 282A Power dissipation: 300W Case: D2PAK-7 On-state resistance: 1.4mΩ Mounting: SMD Kind of channel: enhancement Gate charge: 170nC |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 800 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||
| BSC033N08NS5SCATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET Type of transistor: N-MOSFET |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 4000 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||
| IPD040N08NF2SATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET Type of transistor: N-MOSFET |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2000 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||
|
BCR135E6327 | INFINEON TECHNOLOGIES |
Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.2W; SOT23; R1: 10kΩ Type of transistor: NPN Collector current: 0.1A Mounting: SMD Collector-emitter voltage: 50V Base resistor: 10kΩ Power dissipation: 0.2W Polarisation: bipolar Kind of transistor: BRT Base-emitter resistor: 47kΩ Case: SOT23 Frequency: 150MHz |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||
| BCR135E6327HTSA1 | INFINEON TECHNOLOGIES |
Category: NPN SMD transistorsDescription: Transistor: NPN Type of transistor: NPN |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||
| BCR135SH6327XTSA1 | INFINEON TECHNOLOGIES |
Category: NPN SMD transistorsDescription: Transistor: NPN Type of transistor: NPN |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||
| BCR135E6433HTMA1 | INFINEON TECHNOLOGIES |
Category: NPN SMD transistorsDescription: Transistor: NPN Type of transistor: NPN |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 40000 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||
| BCR135WH6327XTSA1 | INFINEON TECHNOLOGIES |
Category: NPN SMD transistorsDescription: Transistor: NPN Type of transistor: NPN |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH |
| BSS169H6906XTSA1 |
![]() |
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 170mA; 360mW; SOT23
Case: SOT23
Mounting: SMD
Polarisation: unipolar
Technology: SIPMOS™
Drain current: 0.17A
Drain-source voltage: 100V
Application: automotive industry
Type of transistor: N-MOSFET
On-state resistance: 2.9Ω
Power dissipation: 0.36W
Gate charge: 2.8nC
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 170mA; 360mW; SOT23
Case: SOT23
Mounting: SMD
Polarisation: unipolar
Technology: SIPMOS™
Drain current: 0.17A
Drain-source voltage: 100V
Application: automotive industry
Type of transistor: N-MOSFET
On-state resistance: 2.9Ω
Power dissipation: 0.36W
Gate charge: 2.8nC
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| IPP037N08N3GXKSA1 |
![]() |
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 100A; 214W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 100A
Power dissipation: 214W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 3.7mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 100A; 214W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 100A
Power dissipation: 214W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 3.7mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 348 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 17+ | 5.15 EUR |
| 33+ | 2.64 EUR |
| 54+ | 1.59 EUR |
| 100+ | 1.46 EUR |
| IPP019N08NF2SAKMA1 |
![]() |
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 147A; Idm: 764A; 250W
Type of transistor: N-MOSFET
Technology: StrongIRFET™ 2
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 147A
Power dissipation: 250W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 1.9mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 764A
Gate charge: 124nC
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 147A; Idm: 764A; 250W
Type of transistor: N-MOSFET
Technology: StrongIRFET™ 2
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 147A
Power dissipation: 250W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 1.9mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 764A
Gate charge: 124nC
auf Bestellung 118 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 18+ | 4.75 EUR |
| 50+ | 2.14 EUR |
| IPP020N08N5AKSA1 |
![]() |
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 120A; 375W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 120A
Power dissipation: 375W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 2mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 120A; 375W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 120A
Power dissipation: 375W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 2mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 15 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 11+ | 8.19 EUR |
| 12+ | 7.24 EUR |
| 14+ | 6.44 EUR |
| 15+ | 5.66 EUR |
| IPP023N08N5AKSA1 |
![]() |
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 120A; 375W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 120A
Power dissipation: 375W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 2.3mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 120A; 375W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 120A
Power dissipation: 375W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 2.3mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 400 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 14+ | 6.21 EUR |
| 50+ | 2.84 EUR |
| 100+ | 2.65 EUR |
| IPA057N08N3GXKSA1 |
![]() |
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 60A; 39W; TO220FP
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 60A
Power dissipation: 39W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 5.7mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 60A; 39W; TO220FP
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 60A
Power dissipation: 39W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 5.7mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 98 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 25+ | 3.53 EUR |
| 29+ | 3.03 EUR |
| 50+ | 1.98 EUR |
| BSC037N08NS5ATMA1 |
![]() |
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 100A; 114W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 100A
Power dissipation: 114W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 3.7mΩ
Mounting: SMD
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 100A; 114W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 100A
Power dissipation: 114W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 3.7mΩ
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
Mindestbestellmenge: 5000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| BSC061N08NS5ATMA1 |
![]() |
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 82A; 74W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 82A
Power dissipation: 74W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 6.1mΩ
Mounting: SMD
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 82A; 74W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 82A
Power dissipation: 74W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 6.1mΩ
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
Mindestbestellmenge: 5000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| BSC117N08NS5ATMA1 |
![]() |
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 49A; 50W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 49A
Power dissipation: 50W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 11.7mΩ
Mounting: SMD
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 49A; 50W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 49A
Power dissipation: 50W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 11.7mΩ
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
Mindestbestellmenge: 5000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| BSC057N08NS3GATMA1 |
![]() |
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 100A; 114W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 100A
Power dissipation: 114W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 5.7mΩ
Mounting: SMD
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 100A; 114W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 100A
Power dissipation: 114W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 5.7mΩ
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
Mindestbestellmenge: 5000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| BSZ123N08NS3GATMA1 |
![]() |
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 40A; 66W; PG-TSDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 40A
Power dissipation: 66W
Case: PG-TSDSON-8
Gate-source voltage: ±20V
On-state resistance: 12.3mΩ
Mounting: SMD
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 40A; 66W; PG-TSDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 40A
Power dissipation: 66W
Case: PG-TSDSON-8
Gate-source voltage: ±20V
On-state resistance: 12.3mΩ
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
Mindestbestellmenge: 5000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| BSC040N08NS5ATMA1 |
![]() |
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 100A; 104W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 100A
Power dissipation: 104W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 4mΩ
Mounting: SMD
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 100A; 104W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 100A
Power dissipation: 104W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 4mΩ
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
Mindestbestellmenge: 5000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| IPP016N08NF2SAKMA1 |
![]() |
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 196A; 300W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 196A
Power dissipation: 300W
Case: TO220-3
On-state resistance: 1.6mΩ
Mounting: THT
Kind of channel: enhancement
Gate charge: 170nC
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 196A; 300W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 196A
Power dissipation: 300W
Case: TO220-3
On-state resistance: 1.6mΩ
Mounting: THT
Kind of channel: enhancement
Gate charge: 170nC
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| IPP055N08NF2SAKMA1 |
![]() |
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 99A; 107W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 99A
Power dissipation: 107W
Case: TO220-3
On-state resistance: 5.5mΩ
Mounting: THT
Kind of channel: enhancement
Gate charge: 36nC
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 99A; 107W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 99A
Power dissipation: 107W
Case: TO220-3
On-state resistance: 5.5mΩ
Mounting: THT
Kind of channel: enhancement
Gate charge: 36nC
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| BSZ340N08NS3GATMA1 |
![]() |
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 23A; 32W; PG-TSDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 23A
Power dissipation: 32W
Case: PG-TSDSON-8
Gate-source voltage: ±20V
On-state resistance: 34mΩ
Mounting: SMD
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 23A; 32W; PG-TSDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 23A
Power dissipation: 32W
Case: PG-TSDSON-8
Gate-source voltage: ±20V
On-state resistance: 34mΩ
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
Mindestbestellmenge: 5000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| IPA052N08NM5SXKSA1 |
![]() |
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 46A; Idm: 256A; 38W; TO220FP
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 46A
Power dissipation: 38W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 5.2mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 256A
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 46A; Idm: 256A; 38W; TO220FP
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 46A
Power dissipation: 38W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 5.2mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 256A
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IPD053N08N3GATMA1 |
![]() |
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 90A; 150W; DPAK,TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 90A
Power dissipation: 150W
Case: DPAK; TO252
On-state resistance: 5.3mΩ
Mounting: SMD
Kind of channel: enhancement
Gate charge: 52nC
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 90A; 150W; DPAK,TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 90A
Power dissipation: 150W
Case: DPAK; TO252
On-state resistance: 5.3mΩ
Mounting: SMD
Kind of channel: enhancement
Gate charge: 52nC
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| IPD135N08N3GATMA1 |
![]() |
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 45A; 79W; DPAK,TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 45A
Power dissipation: 79W
Case: DPAK; TO252
On-state resistance: 13.5mΩ
Mounting: SMD
Kind of channel: enhancement
Gate charge: 25nC
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 45A; 79W; DPAK,TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 45A
Power dissipation: 79W
Case: DPAK; TO252
On-state resistance: 13.5mΩ
Mounting: SMD
Kind of channel: enhancement
Gate charge: 25nC
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| IPF014N08NF2SATMA1 |
![]() |
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 282A; 300W; D2PAK-7
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 282A
Power dissipation: 300W
Case: D2PAK-7
On-state resistance: 1.4mΩ
Mounting: SMD
Kind of channel: enhancement
Gate charge: 170nC
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 282A; 300W; D2PAK-7
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 282A
Power dissipation: 300W
Case: D2PAK-7
On-state resistance: 1.4mΩ
Mounting: SMD
Kind of channel: enhancement
Gate charge: 170nC
Produkt ist nicht verfügbar
Mindestbestellmenge: 800 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| BSC033N08NS5SCATMA1 |
![]() |
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
Mindestbestellmenge: 4000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| IPD040N08NF2SATMA1 |
![]() |
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
Mindestbestellmenge: 2000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| BCR135E6327 |
![]() |
Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.2W; SOT23; R1: 10kΩ
Type of transistor: NPN
Collector current: 0.1A
Mounting: SMD
Collector-emitter voltage: 50V
Base resistor: 10kΩ
Power dissipation: 0.2W
Polarisation: bipolar
Kind of transistor: BRT
Base-emitter resistor: 47kΩ
Case: SOT23
Frequency: 150MHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.2W; SOT23; R1: 10kΩ
Type of transistor: NPN
Collector current: 0.1A
Mounting: SMD
Collector-emitter voltage: 50V
Base resistor: 10kΩ
Power dissipation: 0.2W
Polarisation: bipolar
Kind of transistor: BRT
Base-emitter resistor: 47kΩ
Case: SOT23
Frequency: 150MHz
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BCR135E6327HTSA1 |
![]() |
Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN
Type of transistor: NPN
Category: NPN SMD transistors
Description: Transistor: NPN
Type of transistor: NPN
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| BCR135SH6327XTSA1 |
![]() |
Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN
Type of transistor: NPN
Category: NPN SMD transistors
Description: Transistor: NPN
Type of transistor: NPN
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| BCR135E6433HTMA1 |
![]() |
Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN
Type of transistor: NPN
Category: NPN SMD transistors
Description: Transistor: NPN
Type of transistor: NPN
Produkt ist nicht verfügbar
Mindestbestellmenge: 40000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| BCR135WH6327XTSA1 |
![]() |
Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN
Type of transistor: NPN
Category: NPN SMD transistors
Description: Transistor: NPN
Type of transistor: NPN
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen
Stück im Wert von UAH











