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BAV70E6433 BAV70E6433 Infineon Technologies INFNS11270-1.pdf?t.download=true&u=5oefqw Description: HIGH SPEED SWITCHING DIODE
auf Bestellung 420000 Stücke:
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10122+0.053 EUR
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BAV70E6327 BAV70E6327 Infineon Technologies INFNS11270-1.pdf?t.download=true&u=5oefqw Description: HIGH SPEED SWITCHING DIODE
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IRS2113MTRPBF IRS2113MTRPBF Infineon Technologies irs2113mpbf.pdf?fileId=5546d462533600a40153567676a227b7 Description: IC GATE DRVR HALF-BRIDGE 16MLPQ
Packaging: Cut Tape (CT)
Package / Case: 16-VFQFN Exposed Pad, 14 Leads
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 16-MLPQ (4x4)
Rise / Fall Time (Typ): 25ns, 17ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 6V, 9.5V
Current - Peak Output (Source, Sink): 2.5A, 2.5A
Part Status: Active
DigiKey Programmable: Not Verified
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10+2.82 EUR
25+2.57 EUR
100+2.3 EUR
250+2.17 EUR
500+2.1 EUR
1000+2.03 EUR
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TDA16846 TDA16846 Infineon Technologies Description: POWER FACTOR CONTROLLER
Packaging: Bulk
Part Status: Active
DigiKey Programmable: Not Verified
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TDA16846HKLA1 TDA16846HKLA1 Infineon Technologies TDA16846%2C47%28-2%29.pdf Description: IC POWER SUPPLY CONTROLLER 14DIP
Packaging: Tube
Package / Case: 14-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -25°C ~ 125°C
Voltage - Supply: 8V ~ 16V
Applications: Power Supply Controller
Supplier Device Package: PG-DIP-14-3
Part Status: Obsolete
Current - Supply: 5 mA
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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TDA16846GGEGHUMA1 TDA16846GGEGHUMA1 Infineon Technologies TDA16846%2C47%28-2%29.pdf Description: IC POWER SUPPLY CONTROLLER DSO14
Packaging: Tape & Reel (TR)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -25°C ~ 125°C
Voltage - Supply: 8V ~ 16V
Applications: Power Supply Controller
Supplier Device Package: PG-DSO-14-3
Part Status: Obsolete
Current - Supply: 5 mA
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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AUIRLR120NTRL AUIRLR120NTRL Infineon Technologies INFN-S-A0002298945-1.pdf?t.download=true&u=5oefqw Description: MOSFET N-CH 100V 10A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 185mOhm @ 6A, 10V
Power Dissipation (Max): 48W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Part Status: Last Time Buy
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 440 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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IRLR120NTRLPBF IRLR120NTRLPBF Infineon Technologies irlr120npbf.pdf?fileId=5546d462533600a40153566965182665 Description: MOSFET N-CH 100V 10A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 185mOhm @ 6A, 10V
Power Dissipation (Max): 48W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 440 pF @ 25 V
Produkt ist nicht verfügbar
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AUIRF540ZSTRL AUIRF540ZSTRL Infineon Technologies Infineon-AUIRF540Z-DS-v01_02-EN.pdf?fileId=5546d462533600a4015355ace0a513c5 Description: MOSFET N-CH 100V 36A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
Rds On (Max) @ Id, Vgs: 26.5mOhm @ 22A, 10V
Power Dissipation (Max): 92W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PG-TO263-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1770 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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TLE92672QXXUMA2 Infineon Technologies Description: TLE9267 - SYSTEM BASIS CHIP
Packaging: Bulk
Part Status: Active
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TLE92682QXXUMA2 Infineon Technologies Description: TLE9268-2QX - SYSTEM BASIS CHIP
Packaging: Bulk
Part Status: Active
Produkt ist nicht verfügbar
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TLE92603QXXUMA1 Infineon Technologies Infineon-TLE9260QX-DS-v01_01-EN.pdf?fileId=5546d4625a888733015a89910ca33eed Description: MID-RANGE SYSTEM BASIS CHIP
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TLE9273QXV33XUMA1 TLE9273QXV33XUMA1 Infineon Technologies Description: HIGH-END SYSTEM BASIS CHIP
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TLE82642EXUMA2 Infineon Technologies TLE8264-2E.pdf Description: IC SYSTEM BASIS CHIP DSO-36
Packaging: Bulk
Part Status: Discontinued at Digi-Key
DigiKey Programmable: Not Verified
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IPW60R199CP Infineon Technologies INFNS30150-1.pdf?t.download=true&u=5oefqw Description: 16A, 600V, 0.199OHM, N-CHANNEL M
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Rds On (Max) @ Id, Vgs: 199mOhm @ 9.9A, 10V
Power Dissipation (Max): 139W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 660µA
Supplier Device Package: PG-TO247-3-21
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1520 pF @ 100 V
Produkt ist nicht verfügbar
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IRLR024NTRLPBF IRLR024NTRLPBF Infineon Technologies irlr024npbf.pdf?fileId=5546d462533600a4015356694f7f265d Description: MOSFET N-CH 55V 17A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 65mOhm @ 10A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 480 pF @ 25 V
Produkt ist nicht verfügbar
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TLE63893GV50XUMA2 TLE63893GV50XUMA2 Infineon Technologies Infineon-TLE6389-DS-v02_10-EN.pdf?fileId=5546d46258fc0bc1015969d25b5241c7 Description: IC REG CTRLR BUCK 14DSOP
Packaging: Tape & Reel (TR)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Output Type: Transistor Driver
Mounting Type: Surface Mount
Function: Step-Down
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Frequency - Switching: 360kHz
Topology: Buck
Voltage - Supply (Vcc/Vdd): 5V ~ 60V
Supplier Device Package: PG-DSO-14-1
Synchronous Rectifier: Yes
Control Features: Current Limit, Enable, Reset
Output Phases: 1
Duty Cycle (Max): 100%
Clock Sync: Yes
Number of Outputs: 1
Grade: Automotive
Qualification: AEC-Q100
Produkt ist nicht verfügbar
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TLE63893GV50XUMA2 TLE63893GV50XUMA2 Infineon Technologies Infineon-TLE6389-DS-v02_10-EN.pdf?fileId=5546d46258fc0bc1015969d25b5241c7 Description: IC REG CTRLR BUCK 14DSOP
Packaging: Cut Tape (CT)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Output Type: Transistor Driver
Mounting Type: Surface Mount
Function: Step-Down
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Frequency - Switching: 360kHz
Topology: Buck
Voltage - Supply (Vcc/Vdd): 5V ~ 60V
Supplier Device Package: PG-DSO-14-1
Synchronous Rectifier: Yes
Control Features: Current Limit, Enable, Reset
Output Phases: 1
Duty Cycle (Max): 100%
Clock Sync: Yes
Number of Outputs: 1
Grade: Automotive
Qualification: AEC-Q100
Produkt ist nicht verfügbar
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TLE63892GV50XUMA2 TLE63892GV50XUMA2 Infineon Technologies Infineon-TLE6389-DS-v02_10-EN.pdf?fileId=5546d46258fc0bc1015969d25b5241c7 Description: IC REG CTRLR BUCK 14DSOP
Packaging: Cut Tape (CT)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Output Type: Transistor Driver
Mounting Type: Surface Mount
Function: Step-Down
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Frequency - Switching: 360kHz
Topology: Buck
Voltage - Supply (Vcc/Vdd): 5V ~ 60V
Supplier Device Package: PG-DSO-14-1
Synchronous Rectifier: Yes
Control Features: Current Limit, Enable, Reset
Output Phases: 1
Duty Cycle (Max): 100%
Clock Sync: Yes
Part Status: Last Time Buy
Number of Outputs: 1
Grade: Automotive
Qualification: AEC-Q100
Produkt ist nicht verfügbar
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2ED28073J06FXUMA1 2ED28073J06FXUMA1 Infineon Technologies Infineon-2ED28073J06F-DataSheet-v02_00-EN.pdf?fileId=5546d462712ef9b7017181f76e671a4d Description: IC GATE DRVR HALF-BRIDGE 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Supplier Device Package: 8-SOIC
Part Status: Active
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 10V ~ 20V
Input Type: CMOS, TTL
High Side Voltage - Max (Bootstrap): 600 V
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.2 V
DigiKey Programmable: Not Verified
Rise / Fall Time (Typ): 1.5µs, 225ns
Current - Peak Output (Source, Sink): 20mA, 80mA
Produkt ist nicht verfügbar
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IPP60R165CP IPP60R165CP Infineon Technologies INFNS15864-1.pdf?t.download=true&u=5oefqw Description: 21A, 600V, 0.165OHM, N-CHANNEL M
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
Rds On (Max) @ Id, Vgs: 165mOhm @ 12A, 10V
Power Dissipation (Max): 192W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 790µA
Supplier Device Package: PG-TO220-3-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 100 V
Produkt ist nicht verfügbar
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BAS4005WH6327XTSA1 BAS4005WH6327XTSA1 Infineon Technologies INFNS19700-1.pdf?t.download=true&u=5oefqw Description: DIODE ARR SCHOT 40V 120MA SOT323
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 100 ps
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 120mA (DC)
Supplier Device Package: PG-SOT323
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 40 mA
Current - Reverse Leakage @ Vr: 1 µA @ 30 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 63000 Stücke:
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3000+0.064 EUR
6000+0.061 EUR
9000+0.06 EUR
Mindestbestellmenge: 3000
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BAT62E6327HTSA1 BAT62E6327HTSA1 Infineon Technologies Infineon-BAT62-DataSheet-v01_00-EN.pdf?fileId=5546d4627a0b0c7b017a1997a91e3eb2 Description: DIODE SCHOTTKY 40V 100MW SOT143
Packaging: Tape & Reel (TR)
Package / Case: TO-253-4, TO-253AA
Diode Type: Schottky - 2 Independent
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 0.6pF @ 0V, 1MHz
Voltage - Peak Reverse (Max): 40V
Supplier Device Package: PG-SOT-143-3D
Part Status: Active
Current - Max: 20 mA
Power Dissipation (Max): 100 mW
auf Bestellung 18000 Stücke:
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3000+0.16 EUR
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PSB2170HV1.1DRY PSB2170HV1.1DRY Infineon Technologies Description: ACOUSTIC ECHO CANCELLER ACE
Packaging: Bulk
auf Bestellung 504 Stücke:
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17+29.72 EUR
Mindestbestellmenge: 17
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PSB2170HV1.1 PSB2170HV1.1 Infineon Technologies Description: ACOUSTIC ECHO CANCELLER ACE
Packaging: Bulk
auf Bestellung 588 Stücke:
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16+33.03 EUR
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PSB2170HV2.1 PSB2170HV2.1 Infineon Technologies Description: ACOUSTIC ECHO CANCELLER ACE
Packaging: Bulk
auf Bestellung 476 Stücke:
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16+33.03 EUR
Mindestbestellmenge: 16
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1ED3125MU12FXUMA1 1ED3125MU12FXUMA1 Infineon Technologies Infineon-1ED312xMU12F-DataSheet-v02_00-EN.pdf?fileId=5546d46277921c320177cf830baf768b Description: DIGITAL ISO 3KV 1CH GT DVR DSO8
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C
Current - Peak Output: 14A
Technology: Magnetic Coupling
Current - Output High, Low: 4A, 4A
Voltage - Isolation: 3000Vrms
Approval Agency: UL
Supplier Device Package: PG-DSO-8
Rise / Fall Time (Typ): 30ns, 30ns (Max)
Common Mode Transient Immunity (Min): 200kV/µs
Pulse Width Distortion (Max): 5ns
Part Status: Active
Number of Channels: 1
Voltage - Output Supply: 10V ~ 35V
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2500+1.82 EUR
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1ED3125MU12FXUMA1 1ED3125MU12FXUMA1 Infineon Technologies Infineon-1ED312xMU12F-DataSheet-v02_00-EN.pdf?fileId=5546d46277921c320177cf830baf768b Description: DIGITAL ISO 3KV 1CH GT DVR DSO8
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C
Current - Peak Output: 14A
Technology: Magnetic Coupling
Current - Output High, Low: 4A, 4A
Voltage - Isolation: 3000Vrms
Approval Agency: UL
Supplier Device Package: PG-DSO-8
Rise / Fall Time (Typ): 30ns, 30ns (Max)
Common Mode Transient Immunity (Min): 200kV/µs
Pulse Width Distortion (Max): 5ns
Part Status: Active
Number of Channels: 1
Voltage - Output Supply: 10V ~ 35V
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10+2.63 EUR
25+2.4 EUR
100+2.14 EUR
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1000+1.89 EUR
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1ED3124MU12FXUMA1 1ED3124MU12FXUMA1 Infineon Technologies Infineon-1ED312xMU12F-DataSheet-v02_00-EN.pdf?fileId=5546d46277921c320177cf830baf768b Description: DIGITAL ISO 3KV 1CH GT DVR DSO8
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C
Current - Peak Output: 14A
Technology: Magnetic Coupling
Current - Output High, Low: 6A, 6A
Voltage - Isolation: 3000Vrms
Approval Agency: UL
Supplier Device Package: PG-DSO-8
Rise / Fall Time (Typ): 30ns, 30ns (Max)
Common Mode Transient Immunity (Min): 200kV/µs
Pulse Width Distortion (Max): 5ns
Part Status: Active
Number of Channels: 1
Voltage - Output Supply: 10V ~ 35V
auf Bestellung 2500 Stücke:
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1ED3124MU12FXUMA1 1ED3124MU12FXUMA1 Infineon Technologies Infineon-1ED312xMU12F-DataSheet-v02_00-EN.pdf?fileId=5546d46277921c320177cf830baf768b Description: DIGITAL ISO 3KV 1CH GT DVR DSO8
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C
Current - Peak Output: 14A
Technology: Magnetic Coupling
Current - Output High, Low: 6A, 6A
Voltage - Isolation: 3000Vrms
Approval Agency: UL
Supplier Device Package: PG-DSO-8
Rise / Fall Time (Typ): 30ns, 30ns (Max)
Common Mode Transient Immunity (Min): 200kV/µs
Pulse Width Distortion (Max): 5ns
Part Status: Active
Number of Channels: 1
Voltage - Output Supply: 10V ~ 35V
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5+3.57 EUR
10+2.65 EUR
25+2.42 EUR
100+2.17 EUR
250+2.05 EUR
500+1.97 EUR
1000+1.91 EUR
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DEMOBOARDTLE7182EMTOBO1 DEMOBOARDTLE7182EMTOBO1 Infineon Technologies Description: EVAL BOARD FOR TLE7182EM
Packaging: Bulk
Function: Gate Driver
Type: Power Management
Utilized IC / Part: TLE7182EM
Supplied Contents: Board(s)
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TLE7182EM TLE7182EM Infineon Technologies Infineon-TLE7182EM-DS-v01_01-en.pdf?fileId=db3a30432f5008fe012f5442920c3996 Description: TLE7182 - GATE DRIVER
Packaging: Bulk
Package / Case: 24-LSSOP (0.154", 3.90mm Width) Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 7V ~ 34V
Input Type: Inverting, Non-Inverting
High Side Voltage - Max (Bootstrap): 55 V
Supplier Device Package: PG-SSOP-24-4
Rise / Fall Time (Typ): 250ns, 200ns
Channel Type: Synchronous
Driven Configuration: Half-Bridge
Number of Drivers: 4
Gate Type: N-Channel MOSFET
Logic Voltage - VIL, VIH: 1V, 2V
Part Status: Active
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IPL65R099C7AUMA1 IPL65R099C7AUMA1 Infineon Technologies INFN-S-A0003614916-1.pdf?t.download=true&u=5oefqw Description: MOSFET N-CH 650V 21A 4VSON
Packaging: Tape & Reel (TR)
Package / Case: 4-PowerTSFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
Rds On (Max) @ Id, Vgs: 99mOhm @ 5.9A, 10V
Power Dissipation (Max): 128W (Tc)
Vgs(th) (Max) @ Id: 4V @ 590µA
Supplier Device Package: PG-VSON-4
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2140 pF @ 400 V
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AIKB50N65DH5ATMA1 AIKB50N65DH5ATMA1 Infineon Technologies Infineon-Semiconductor_solutions_for_hybrid_electric_and_electric_cars-ABR-v01_00-EN.pdf?fileId=5546d46269e1c019016a4a76250c4ab4 Description: IGBT NPT 650V 50A TO263-3-2
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Input Type: Standard
Supplier Device Package: PG-TO263-3-2
IGBT Type: NPT
Part Status: Active
Current - Collector (Ic) (Max): 50 A
Voltage - Collector Emitter Breakdown (Max): 650 V
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FS400R07A1E3 Infineon Technologies INFN-S-A0006155526-1.pdf?t.download=true&u=5oefqw Description: IGBT MODULE
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 400A
NTC Thermistor: Yes
Supplier Device Package: AG-HYBRID1-1
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 500 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Power - Max: 1250 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 26 nF @ 25 V
Produkt ist nicht verfügbar
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FS400R07A1E3H5BPSA1 FS400R07A1E3H5BPSA1 Infineon Technologies FS400R07A1E3_H5_rev3.0_2014-12-02.pdf Description: IGBT MODULE
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Full Bridge Inverter
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 400A
NTC Thermistor: Yes
Part Status: Obsolete
Current - Collector (Ic) (Max): 500 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Power - Max: 750 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 26 nF @ 25 V
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FS400R07A1E3BOMA1 FS400R07A1E3BOMA1 Infineon Technologies Infineon-FS400R07A1E3-DS-v03_03-EN.pdf?fileId=db3a304325afd6e001261d0930996007 Description: MODULE IGBT HYBRID PK
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 400A
NTC Thermistor: Yes
Supplier Device Package: AG-HYBRID1-1
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 500 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Power - Max: 1250 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 26 nF @ 25 V
Produkt ist nicht verfügbar
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BAR8602ELSE6327XTSA1 Infineon Technologies Description: RF PIN DIODE > ANTENNA SWITCH
Packaging: Bulk
Part Status: Active
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BAT6404E6433HTMA1 BAT6404E6433HTMA1 Infineon Technologies INFNS11551-1.pdf?t.download=true&u=5oefqw Description: DIODE ARR SCHOTT 40V 250MA SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 5 ns
Technology: Schottky
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 250mA
Supplier Device Package: PG-SOT23
Operating Temperature - Junction: 150°C (Max)
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 100 mA
Current - Reverse Leakage @ Vr: 2 µA @ 30 V
Qualification: AEC-Q101
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BAS4004E6433HTMA1 BAS4004E6433HTMA1 Infineon Technologies INFNS19700-1.pdf?t.download=true&u=5oefqw Description: DIODE ARR SCHOTT 40V 120MA SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 100 ps
Technology: Schottky
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 120mA (DC)
Supplier Device Package: PG-SOT23
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 40 mA
Current - Reverse Leakage @ Vr: 1 µA @ 30 V
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CY7C1360C-166BZC CY7C1360C-166BZC Infineon Technologies download Description: IC SRAM 9MBIT PARALLEL 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 9Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 3.135V ~ 3.6V
Technology: SRAM - Synchronous, SDR
Clock Frequency: 166 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (13x15)
Memory Interface: Parallel
Access Time: 3.5 ns
Memory Organization: 256K x 36
DigiKey Programmable: Not Verified
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IRLR3636TRLPBF IRLR3636TRLPBF Infineon Technologies IRSDS10828-1.pdf?t.download=true&u=5oefqw Description: MOSFET N-CH 60V 50A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 6.8mOhm @ 50A, 10V
Power Dissipation (Max): 143W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 100µA
Supplier Device Package: TO-252AA (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 3779 pF @ 50 V
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IRFR5410TRLPBF IRFR5410TRLPBF Infineon Technologies irfr5410pbf.pdf?fileId=5546d462533600a4015356356f622107 Description: MOSFET P-CH 100V 13A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
Rds On (Max) @ Id, Vgs: 205mOhm @ 7.8A, 10V
Power Dissipation (Max): 66W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 760 pF @ 25 V
Produkt ist nicht verfügbar
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BCR 149T E6327 BCR 149T E6327 Infineon Technologies BCR149.pdf Description: TRANS PREBIAS NPN 50V 0.07A SC75
Packaging: Tape & Reel (TR)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 5mA, 5V
Supplier Device Package: PG-SC75-3D
Current - Collector (Ic) (Max): 70 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 250 mW
Frequency - Transition: 150 MHz
Resistor - Base (R1): 47 kOhms
Resistors Included: R1 Only
Produkt ist nicht verfügbar
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AUIRF7316QTR AUIRF7316QTR Infineon Technologies INFN-S-A0002298726-1.pdf?t.download=true&u=5oefqw Description: MOSFET 2P-CH 30V 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W
Drain to Source Voltage (Vdss): 30V
Input Capacitance (Ciss) (Max) @ Vds: 710pF @ 25V
Rds On (Max) @ Id, Vgs: 58mOhm @ 4.9A, 10V
Gate Charge (Qg) (Max) @ Vgs: 34nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Not For New Designs
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AUIRF7316QTR AUIRF7316QTR Infineon Technologies INFN-S-A0002298726-1.pdf?t.download=true&u=5oefqw Description: MOSFET 2P-CH 30V 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W
Drain to Source Voltage (Vdss): 30V
Input Capacitance (Ciss) (Max) @ Vds: 710pF @ 25V
Rds On (Max) @ Id, Vgs: 58mOhm @ 4.9A, 10V
Gate Charge (Qg) (Max) @ Vgs: 34nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Not For New Designs
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CY7C199CN-15ZXC CY7C199CN-15ZXC Infineon Technologies CY7C199CN.pdf Description: IC SRAM 256KBIT PAR 28TSOP I
Packaging: Tray
Package / Case: 28-TSSOP (0.465", 11.80mm Width)
Mounting Type: Surface Mount
Memory Size: 256Kbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 28-TSOP I
Part Status: Obsolete
Write Cycle Time - Word, Page: 15ns
Memory Interface: Parallel
Access Time: 15 ns
Memory Organization: 32K x 8
DigiKey Programmable: Not Verified
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CY7C199-15ZC CY7C199-15ZC Infineon Technologies CY7C199.pdf Description: IC SRAM 256KBIT 15NS 28TSOP
Packaging: Bag
Package / Case: 28-TSSOP (0.465", 11.80mm Width)
Mounting Type: Surface Mount
Memory Size: 256Kbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 28-TSOP I
Part Status: Obsolete
Write Cycle Time - Word, Page: 15ns
Memory Interface: Parallel
Access Time: 15 ns
Memory Organization: 32K x 8
DigiKey Programmable: Not Verified
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CY7C199CL-15ZXC CY7C199CL-15ZXC Infineon Technologies CY7C199C%20RevB.pdf Description: IC SRAM 256KBIT PAR 28TSOP I
Packaging: Bag
Package / Case: 28-TSSOP (0.465", 11.80mm Width)
Mounting Type: Surface Mount
Memory Size: 256Kbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 28-TSOP I
Part Status: Obsolete
Write Cycle Time - Word, Page: 15ns
Memory Interface: Parallel
Access Time: 15 ns
Memory Organization: 32K x 8
DigiKey Programmable: Not Verified
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IPA030N10NF2SXKSA1 IPA030N10NF2SXKSA1 Infineon Technologies Infineon-IPA030N10NF2S-DataSheet-v02_00-EN.pdf?fileId=5546d46278d64ffd0179176bf1c41165 Description: TRENCH >=100V PG-TO220-3
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 83A (Tc)
Rds On (Max) @ Id, Vgs: 3mOhm @ 50A, 10V
Power Dissipation (Max): 41W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 169µA
Supplier Device Package: PG-TO220 Full Pack
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 154 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7300 pF @ 50 V
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IAUZ40N08S5N100ATMA1 IAUZ40N08S5N100ATMA1 Infineon Technologies Infineon-IAUZ40N08S5N100-DataSheet-v01_00-EN.pdf?fileId=5546d4626f1cf1c5016f1e6c94a801de Description: MOSFET N-CH 75V 80A 8TSDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 20A, 10V
Power Dissipation (Max): 68W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 27µA
Supplier Device Package: PG-TDSON-8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 24.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1591 pF @ 40 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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IKB15N60TATMA1 IKB15N60TATMA1 Infineon Technologies Infineon-IKB15N60T-DS-v02_08-EN.pdf?fileId=db3a304412b407950112b4287d223e0a Description: IGBT TRENCH FS 600V 30A TO263-3
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 34 ns
Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 15A
Supplier Device Package: PG-TO263-3-2
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 17ns/188ns
Switching Energy: 570µJ
Test Condition: 400V, 15A, 15Ohm, 15V
Gate Charge: 87 nC
Part Status: Active
Current - Collector (Ic) (Max): 30 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 45 A
Power - Max: 130 W
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TLE88812TNAKSA1 TLE88812TNAKSA1 Infineon Technologies Infineon-TLE8881-2-DataSheet-v01_00-EN.pdf?fileId=5546d4626cb27db2016d5d74fb3a0492 Description: ALTERNATOR_IC
Packaging: Tube
Package / Case: TO-220-5
Voltage - Output: 12V
Mounting Type: Through Hole
Number of Outputs: 1
Voltage - Input: 6V ~ 18V
Operating Temperature: -40°C ~ 175°C (TJ)
Supplier Device Package: PG-TO220-5-12
Part Status: Active
Grade: Automotive
Qualification: AEC-Q100
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1+20.26 EUR
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100+15.72 EUR
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1EDU20I12SVXUMA1 1EDU20I12SVXUMA1 Infineon Technologies Infineon-1EDS20I12SV-DS-v01_00-EN.pdf?fileId=5546d46145f1f3a40145faf0aa200fc1 Description: DIGITAL ISO 5KV 1CH GATE DVR
Packaging: Tape & Reel (TR)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Technology: Magnetic Coupling
Voltage - Isolation: 5000Vrms
Part Status: Active
Number of Channels: 1
Produkt ist nicht verfügbar
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1EDU20I12SVXUMA1 1EDU20I12SVXUMA1 Infineon Technologies Infineon-1EDS20I12SV-DS-v01_00-EN.pdf?fileId=5546d46145f1f3a40145faf0aa200fc1 Description: DIGITAL ISO 5KV 1CH GATE DVR
Packaging: Cut Tape (CT)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Technology: Magnetic Coupling
Voltage - Isolation: 5000Vrms
Part Status: Active
Number of Channels: 1
Produkt ist nicht verfügbar
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F4100R12KS4BOSA1 F4100R12KS4BOSA1 Infineon Technologies Infineon-F4_100R12KS4-DS-v02_01-en_de.pdf?fileId=db3a304412b407950112b4327b185851 Description: IGBT MOD 1200V 130A 660W
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 125°C
Vce(on) (Max) @ Vge, Ic: 3.75V @ 15V, 100A
NTC Thermistor: Yes
Supplier Device Package: Module
Part Status: Active
Current - Collector (Ic) (Max): 130 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 660 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 6.8 nF @ 25 V
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SLB9665TT20FW561XUMA1 Infineon Technologies Description: OPTIGA EMBEDDED SECURITY TRUSTED
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SLB9665VQ20FW560XUMA2 SLB9665VQ20FW560XUMA2 Infineon Technologies SLB9665xx2.0.pdf Description: SECURITY IC'S/AUTHENTICATION IC'
Packaging: Tape & Reel (TR)
Package / Case: 32-VFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: LPC
Operating Temperature: -20°C ~ 85°C (TA)
Voltage - Supply: 3V ~ 3.6V
Program Memory Type: NVM (7.04kB)
Applications: Trusted Platform Module (TPM)
Core Processor: 16-Bit
Supplier Device Package: PG-VQFN-32-13
Part Status: Not For New Designs
Number of I/O: 1
DigiKey Programmable: Not Verified
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IPD50N06S2L13ATMA2 IPD50N06S2L13ATMA2 Infineon Technologies Infineon-IPD50N06S2L_13-DS-v01_00-en.pdf?fileId=db3a304412b407950112b433e8e55e1a Description: MOSFET N-CH 55V 50A TO252-31
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 12.7mOhm @ 34A, 10V
Power Dissipation (Max): 136W (Tc)
Vgs(th) (Max) @ Id: 2V @ 80µA
Supplier Device Package: PG-TO252-3-11
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 69 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
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2500+0.94 EUR
Mindestbestellmenge: 2500
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IPB110P06LMATMA1 IPB110P06LMATMA1 Infineon Technologies Infineon-IPB110P06LM-DS-v02_00-EN.pdf?fileId=5546d46269e1c019016a03e2d06000ae Description: MOSFET P-CH 60V 100A TO263-3
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 11mOhm @ 100A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 2V @ 5.55mA
Supplier Device Package: PG-TO263-3-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 281 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8500 pF @ 30 V
Produkt ist nicht verfügbar
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BAV70E6433 INFNS11270-1.pdf?t.download=true&u=5oefqw
BAV70E6433
Hersteller: Infineon Technologies
Description: HIGH SPEED SWITCHING DIODE
auf Bestellung 420000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
10122+0.053 EUR
Mindestbestellmenge: 10122
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BAV70E6327 INFNS11270-1.pdf?t.download=true&u=5oefqw
BAV70E6327
Hersteller: Infineon Technologies
Description: HIGH SPEED SWITCHING DIODE
Produkt ist nicht verfügbar
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IRS2113MTRPBF irs2113mpbf.pdf?fileId=5546d462533600a40153567676a227b7
IRS2113MTRPBF
Hersteller: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 16MLPQ
Packaging: Cut Tape (CT)
Package / Case: 16-VFQFN Exposed Pad, 14 Leads
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 16-MLPQ (4x4)
Rise / Fall Time (Typ): 25ns, 17ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 6V, 9.5V
Current - Peak Output (Source, Sink): 2.5A, 2.5A
Part Status: Active
DigiKey Programmable: Not Verified
auf Bestellung 2594 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5+3.8 EUR
10+2.82 EUR
25+2.57 EUR
100+2.3 EUR
250+2.17 EUR
500+2.1 EUR
1000+2.03 EUR
Mindestbestellmenge: 5
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TDA16846
TDA16846
Hersteller: Infineon Technologies
Description: POWER FACTOR CONTROLLER
Packaging: Bulk
Part Status: Active
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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TDA16846HKLA1 TDA16846%2C47%28-2%29.pdf
TDA16846HKLA1
Hersteller: Infineon Technologies
Description: IC POWER SUPPLY CONTROLLER 14DIP
Packaging: Tube
Package / Case: 14-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -25°C ~ 125°C
Voltage - Supply: 8V ~ 16V
Applications: Power Supply Controller
Supplier Device Package: PG-DIP-14-3
Part Status: Obsolete
Current - Supply: 5 mA
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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TDA16846GGEGHUMA1 TDA16846%2C47%28-2%29.pdf
TDA16846GGEGHUMA1
Hersteller: Infineon Technologies
Description: IC POWER SUPPLY CONTROLLER DSO14
Packaging: Tape & Reel (TR)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -25°C ~ 125°C
Voltage - Supply: 8V ~ 16V
Applications: Power Supply Controller
Supplier Device Package: PG-DSO-14-3
Part Status: Obsolete
Current - Supply: 5 mA
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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AUIRLR120NTRL INFN-S-A0002298945-1.pdf?t.download=true&u=5oefqw
AUIRLR120NTRL
Hersteller: Infineon Technologies
Description: MOSFET N-CH 100V 10A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 185mOhm @ 6A, 10V
Power Dissipation (Max): 48W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Part Status: Last Time Buy
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 440 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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IRLR120NTRLPBF irlr120npbf.pdf?fileId=5546d462533600a40153566965182665
IRLR120NTRLPBF
Hersteller: Infineon Technologies
Description: MOSFET N-CH 100V 10A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 185mOhm @ 6A, 10V
Power Dissipation (Max): 48W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 440 pF @ 25 V
Produkt ist nicht verfügbar
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AUIRF540ZSTRL Infineon-AUIRF540Z-DS-v01_02-EN.pdf?fileId=5546d462533600a4015355ace0a513c5
AUIRF540ZSTRL
Hersteller: Infineon Technologies
Description: MOSFET N-CH 100V 36A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
Rds On (Max) @ Id, Vgs: 26.5mOhm @ 22A, 10V
Power Dissipation (Max): 92W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PG-TO263-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1770 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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TLE92672QXXUMA2
Hersteller: Infineon Technologies
Description: TLE9267 - SYSTEM BASIS CHIP
Packaging: Bulk
Part Status: Active
Produkt ist nicht verfügbar
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TLE92682QXXUMA2
Hersteller: Infineon Technologies
Description: TLE9268-2QX - SYSTEM BASIS CHIP
Packaging: Bulk
Part Status: Active
Produkt ist nicht verfügbar
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TLE92603QXXUMA1 Infineon-TLE9260QX-DS-v01_01-EN.pdf?fileId=5546d4625a888733015a89910ca33eed
Hersteller: Infineon Technologies
Description: MID-RANGE SYSTEM BASIS CHIP
auf Bestellung 3057 Stücke:
Lieferzeit 10-14 Tag (e)
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TLE9273QXV33XUMA1
TLE9273QXV33XUMA1
Hersteller: Infineon Technologies
Description: HIGH-END SYSTEM BASIS CHIP
auf Bestellung 4842 Stücke:
Lieferzeit 10-14 Tag (e)
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TLE82642EXUMA2 TLE8264-2E.pdf
Hersteller: Infineon Technologies
Description: IC SYSTEM BASIS CHIP DSO-36
Packaging: Bulk
Part Status: Discontinued at Digi-Key
DigiKey Programmable: Not Verified
auf Bestellung 102000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
78+6.52 EUR
Mindestbestellmenge: 78
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IPW60R199CP INFNS30150-1.pdf?t.download=true&u=5oefqw
Hersteller: Infineon Technologies
Description: 16A, 600V, 0.199OHM, N-CHANNEL M
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Rds On (Max) @ Id, Vgs: 199mOhm @ 9.9A, 10V
Power Dissipation (Max): 139W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 660µA
Supplier Device Package: PG-TO247-3-21
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1520 pF @ 100 V
Produkt ist nicht verfügbar
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IRLR024NTRLPBF irlr024npbf.pdf?fileId=5546d462533600a4015356694f7f265d
IRLR024NTRLPBF
Hersteller: Infineon Technologies
Description: MOSFET N-CH 55V 17A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 65mOhm @ 10A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 480 pF @ 25 V
Produkt ist nicht verfügbar
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TLE63893GV50XUMA2 Infineon-TLE6389-DS-v02_10-EN.pdf?fileId=5546d46258fc0bc1015969d25b5241c7
TLE63893GV50XUMA2
Hersteller: Infineon Technologies
Description: IC REG CTRLR BUCK 14DSOP
Packaging: Tape & Reel (TR)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Output Type: Transistor Driver
Mounting Type: Surface Mount
Function: Step-Down
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Frequency - Switching: 360kHz
Topology: Buck
Voltage - Supply (Vcc/Vdd): 5V ~ 60V
Supplier Device Package: PG-DSO-14-1
Synchronous Rectifier: Yes
Control Features: Current Limit, Enable, Reset
Output Phases: 1
Duty Cycle (Max): 100%
Clock Sync: Yes
Number of Outputs: 1
Grade: Automotive
Qualification: AEC-Q100
Produkt ist nicht verfügbar
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TLE63893GV50XUMA2 Infineon-TLE6389-DS-v02_10-EN.pdf?fileId=5546d46258fc0bc1015969d25b5241c7
TLE63893GV50XUMA2
Hersteller: Infineon Technologies
Description: IC REG CTRLR BUCK 14DSOP
Packaging: Cut Tape (CT)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Output Type: Transistor Driver
Mounting Type: Surface Mount
Function: Step-Down
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Frequency - Switching: 360kHz
Topology: Buck
Voltage - Supply (Vcc/Vdd): 5V ~ 60V
Supplier Device Package: PG-DSO-14-1
Synchronous Rectifier: Yes
Control Features: Current Limit, Enable, Reset
Output Phases: 1
Duty Cycle (Max): 100%
Clock Sync: Yes
Number of Outputs: 1
Grade: Automotive
Qualification: AEC-Q100
Produkt ist nicht verfügbar
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TLE63892GV50XUMA2 Infineon-TLE6389-DS-v02_10-EN.pdf?fileId=5546d46258fc0bc1015969d25b5241c7
TLE63892GV50XUMA2
Hersteller: Infineon Technologies
Description: IC REG CTRLR BUCK 14DSOP
Packaging: Cut Tape (CT)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Output Type: Transistor Driver
Mounting Type: Surface Mount
Function: Step-Down
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Frequency - Switching: 360kHz
Topology: Buck
Voltage - Supply (Vcc/Vdd): 5V ~ 60V
Supplier Device Package: PG-DSO-14-1
Synchronous Rectifier: Yes
Control Features: Current Limit, Enable, Reset
Output Phases: 1
Duty Cycle (Max): 100%
Clock Sync: Yes
Part Status: Last Time Buy
Number of Outputs: 1
Grade: Automotive
Qualification: AEC-Q100
Produkt ist nicht verfügbar
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2ED28073J06FXUMA1 Infineon-2ED28073J06F-DataSheet-v02_00-EN.pdf?fileId=5546d462712ef9b7017181f76e671a4d
2ED28073J06FXUMA1
Hersteller: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Supplier Device Package: 8-SOIC
Part Status: Active
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 10V ~ 20V
Input Type: CMOS, TTL
High Side Voltage - Max (Bootstrap): 600 V
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.2 V
DigiKey Programmable: Not Verified
Rise / Fall Time (Typ): 1.5µs, 225ns
Current - Peak Output (Source, Sink): 20mA, 80mA
Produkt ist nicht verfügbar
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IPP60R165CP INFNS15864-1.pdf?t.download=true&u=5oefqw
IPP60R165CP
Hersteller: Infineon Technologies
Description: 21A, 600V, 0.165OHM, N-CHANNEL M
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
Rds On (Max) @ Id, Vgs: 165mOhm @ 12A, 10V
Power Dissipation (Max): 192W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 790µA
Supplier Device Package: PG-TO220-3-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 100 V
Produkt ist nicht verfügbar
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BAS4005WH6327XTSA1 INFNS19700-1.pdf?t.download=true&u=5oefqw
BAS4005WH6327XTSA1
Hersteller: Infineon Technologies
Description: DIODE ARR SCHOT 40V 120MA SOT323
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 100 ps
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 120mA (DC)
Supplier Device Package: PG-SOT323
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 40 mA
Current - Reverse Leakage @ Vr: 1 µA @ 30 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 63000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.064 EUR
6000+0.061 EUR
9000+0.06 EUR
Mindestbestellmenge: 3000
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BAT62E6327HTSA1 Infineon-BAT62-DataSheet-v01_00-EN.pdf?fileId=5546d4627a0b0c7b017a1997a91e3eb2
BAT62E6327HTSA1
Hersteller: Infineon Technologies
Description: DIODE SCHOTTKY 40V 100MW SOT143
Packaging: Tape & Reel (TR)
Package / Case: TO-253-4, TO-253AA
Diode Type: Schottky - 2 Independent
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 0.6pF @ 0V, 1MHz
Voltage - Peak Reverse (Max): 40V
Supplier Device Package: PG-SOT-143-3D
Part Status: Active
Current - Max: 20 mA
Power Dissipation (Max): 100 mW
auf Bestellung 18000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.16 EUR
Mindestbestellmenge: 3000
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PSB2170HV1.1DRY
PSB2170HV1.1DRY
Hersteller: Infineon Technologies
Description: ACOUSTIC ECHO CANCELLER ACE
Packaging: Bulk
auf Bestellung 504 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
17+29.72 EUR
Mindestbestellmenge: 17
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PSB2170HV1.1
PSB2170HV1.1
Hersteller: Infineon Technologies
Description: ACOUSTIC ECHO CANCELLER ACE
Packaging: Bulk
auf Bestellung 588 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
16+33.03 EUR
Mindestbestellmenge: 16
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PSB2170HV2.1
PSB2170HV2.1
Hersteller: Infineon Technologies
Description: ACOUSTIC ECHO CANCELLER ACE
Packaging: Bulk
auf Bestellung 476 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
16+33.03 EUR
Mindestbestellmenge: 16
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1ED3125MU12FXUMA1 Infineon-1ED312xMU12F-DataSheet-v02_00-EN.pdf?fileId=5546d46277921c320177cf830baf768b
1ED3125MU12FXUMA1
Hersteller: Infineon Technologies
Description: DIGITAL ISO 3KV 1CH GT DVR DSO8
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C
Current - Peak Output: 14A
Technology: Magnetic Coupling
Current - Output High, Low: 4A, 4A
Voltage - Isolation: 3000Vrms
Approval Agency: UL
Supplier Device Package: PG-DSO-8
Rise / Fall Time (Typ): 30ns, 30ns (Max)
Common Mode Transient Immunity (Min): 200kV/µs
Pulse Width Distortion (Max): 5ns
Part Status: Active
Number of Channels: 1
Voltage - Output Supply: 10V ~ 35V
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2500+1.82 EUR
Mindestbestellmenge: 2500
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1ED3125MU12FXUMA1 Infineon-1ED312xMU12F-DataSheet-v02_00-EN.pdf?fileId=5546d46277921c320177cf830baf768b
1ED3125MU12FXUMA1
Hersteller: Infineon Technologies
Description: DIGITAL ISO 3KV 1CH GT DVR DSO8
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C
Current - Peak Output: 14A
Technology: Magnetic Coupling
Current - Output High, Low: 4A, 4A
Voltage - Isolation: 3000Vrms
Approval Agency: UL
Supplier Device Package: PG-DSO-8
Rise / Fall Time (Typ): 30ns, 30ns (Max)
Common Mode Transient Immunity (Min): 200kV/µs
Pulse Width Distortion (Max): 5ns
Part Status: Active
Number of Channels: 1
Voltage - Output Supply: 10V ~ 35V
auf Bestellung 2827 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5+3.56 EUR
10+2.63 EUR
25+2.4 EUR
100+2.14 EUR
250+2.02 EUR
500+1.95 EUR
1000+1.89 EUR
Mindestbestellmenge: 5
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1ED3124MU12FXUMA1 Infineon-1ED312xMU12F-DataSheet-v02_00-EN.pdf?fileId=5546d46277921c320177cf830baf768b
1ED3124MU12FXUMA1
Hersteller: Infineon Technologies
Description: DIGITAL ISO 3KV 1CH GT DVR DSO8
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C
Current - Peak Output: 14A
Technology: Magnetic Coupling
Current - Output High, Low: 6A, 6A
Voltage - Isolation: 3000Vrms
Approval Agency: UL
Supplier Device Package: PG-DSO-8
Rise / Fall Time (Typ): 30ns, 30ns (Max)
Common Mode Transient Immunity (Min): 200kV/µs
Pulse Width Distortion (Max): 5ns
Part Status: Active
Number of Channels: 1
Voltage - Output Supply: 10V ~ 35V
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2500+1.85 EUR
Mindestbestellmenge: 2500
Im Einkaufswagen  Stück im Wert von  UAH
1ED3124MU12FXUMA1 Infineon-1ED312xMU12F-DataSheet-v02_00-EN.pdf?fileId=5546d46277921c320177cf830baf768b
1ED3124MU12FXUMA1
Hersteller: Infineon Technologies
Description: DIGITAL ISO 3KV 1CH GT DVR DSO8
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C
Current - Peak Output: 14A
Technology: Magnetic Coupling
Current - Output High, Low: 6A, 6A
Voltage - Isolation: 3000Vrms
Approval Agency: UL
Supplier Device Package: PG-DSO-8
Rise / Fall Time (Typ): 30ns, 30ns (Max)
Common Mode Transient Immunity (Min): 200kV/µs
Pulse Width Distortion (Max): 5ns
Part Status: Active
Number of Channels: 1
Voltage - Output Supply: 10V ~ 35V
auf Bestellung 2588 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5+3.57 EUR
10+2.65 EUR
25+2.42 EUR
100+2.17 EUR
250+2.05 EUR
500+1.97 EUR
1000+1.91 EUR
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DEMOBOARDTLE7182EMTOBO1
DEMOBOARDTLE7182EMTOBO1
Hersteller: Infineon Technologies
Description: EVAL BOARD FOR TLE7182EM
Packaging: Bulk
Function: Gate Driver
Type: Power Management
Utilized IC / Part: TLE7182EM
Supplied Contents: Board(s)
auf Bestellung 2 Stücke:
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Anzahl Preis
1+1279.87 EUR
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TLE7182EM Infineon-TLE7182EM-DS-v01_01-en.pdf?fileId=db3a30432f5008fe012f5442920c3996
TLE7182EM
Hersteller: Infineon Technologies
Description: TLE7182 - GATE DRIVER
Packaging: Bulk
Package / Case: 24-LSSOP (0.154", 3.90mm Width) Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 7V ~ 34V
Input Type: Inverting, Non-Inverting
High Side Voltage - Max (Bootstrap): 55 V
Supplier Device Package: PG-SSOP-24-4
Rise / Fall Time (Typ): 250ns, 200ns
Channel Type: Synchronous
Driven Configuration: Half-Bridge
Number of Drivers: 4
Gate Type: N-Channel MOSFET
Logic Voltage - VIL, VIH: 1V, 2V
Part Status: Active
Produkt ist nicht verfügbar
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IPL65R099C7AUMA1 INFN-S-A0003614916-1.pdf?t.download=true&u=5oefqw
IPL65R099C7AUMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 650V 21A 4VSON
Packaging: Tape & Reel (TR)
Package / Case: 4-PowerTSFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
Rds On (Max) @ Id, Vgs: 99mOhm @ 5.9A, 10V
Power Dissipation (Max): 128W (Tc)
Vgs(th) (Max) @ Id: 4V @ 590µA
Supplier Device Package: PG-VSON-4
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2140 pF @ 400 V
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+3.39 EUR
Mindestbestellmenge: 3000
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AIKB50N65DH5ATMA1 Infineon-Semiconductor_solutions_for_hybrid_electric_and_electric_cars-ABR-v01_00-EN.pdf?fileId=5546d46269e1c019016a4a76250c4ab4
AIKB50N65DH5ATMA1
Hersteller: Infineon Technologies
Description: IGBT NPT 650V 50A TO263-3-2
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Input Type: Standard
Supplier Device Package: PG-TO263-3-2
IGBT Type: NPT
Part Status: Active
Current - Collector (Ic) (Max): 50 A
Voltage - Collector Emitter Breakdown (Max): 650 V
auf Bestellung 3980 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+8.96 EUR
10+5.99 EUR
100+4.3 EUR
500+4.22 EUR
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FS400R07A1E3 INFN-S-A0006155526-1.pdf?t.download=true&u=5oefqw
Hersteller: Infineon Technologies
Description: IGBT MODULE
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 400A
NTC Thermistor: Yes
Supplier Device Package: AG-HYBRID1-1
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 500 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Power - Max: 1250 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 26 nF @ 25 V
Produkt ist nicht verfügbar
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FS400R07A1E3H5BPSA1 FS400R07A1E3_H5_rev3.0_2014-12-02.pdf
FS400R07A1E3H5BPSA1
Hersteller: Infineon Technologies
Description: IGBT MODULE
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Full Bridge Inverter
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 400A
NTC Thermistor: Yes
Part Status: Obsolete
Current - Collector (Ic) (Max): 500 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Power - Max: 750 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 26 nF @ 25 V
Produkt ist nicht verfügbar
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FS400R07A1E3BOMA1 Infineon-FS400R07A1E3-DS-v03_03-EN.pdf?fileId=db3a304325afd6e001261d0930996007
FS400R07A1E3BOMA1
Hersteller: Infineon Technologies
Description: MODULE IGBT HYBRID PK
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 400A
NTC Thermistor: Yes
Supplier Device Package: AG-HYBRID1-1
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 500 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Power - Max: 1250 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 26 nF @ 25 V
Produkt ist nicht verfügbar
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BAR8602ELSE6327XTSA1
Hersteller: Infineon Technologies
Description: RF PIN DIODE > ANTENNA SWITCH
Packaging: Bulk
Part Status: Active
auf Bestellung 105000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3463+0.15 EUR
Mindestbestellmenge: 3463
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BAT6404E6433HTMA1 INFNS11551-1.pdf?t.download=true&u=5oefqw
BAT6404E6433HTMA1
Hersteller: Infineon Technologies
Description: DIODE ARR SCHOTT 40V 250MA SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 5 ns
Technology: Schottky
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 250mA
Supplier Device Package: PG-SOT23
Operating Temperature - Junction: 150°C (Max)
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 100 mA
Current - Reverse Leakage @ Vr: 2 µA @ 30 V
Qualification: AEC-Q101
auf Bestellung 20000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
10000+0.071 EUR
20000+0.064 EUR
Mindestbestellmenge: 10000
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BAS4004E6433HTMA1 INFNS19700-1.pdf?t.download=true&u=5oefqw
BAS4004E6433HTMA1
Hersteller: Infineon Technologies
Description: DIODE ARR SCHOTT 40V 120MA SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 100 ps
Technology: Schottky
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 120mA (DC)
Supplier Device Package: PG-SOT23
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 40 mA
Current - Reverse Leakage @ Vr: 1 µA @ 30 V
auf Bestellung 18000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
10000+0.058 EUR
Mindestbestellmenge: 10000
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CY7C1360C-166BZC download
CY7C1360C-166BZC
Hersteller: Infineon Technologies
Description: IC SRAM 9MBIT PARALLEL 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 9Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 3.135V ~ 3.6V
Technology: SRAM - Synchronous, SDR
Clock Frequency: 166 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (13x15)
Memory Interface: Parallel
Access Time: 3.5 ns
Memory Organization: 256K x 36
DigiKey Programmable: Not Verified
auf Bestellung 287 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+6.83 EUR
Mindestbestellmenge: 3
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IRLR3636TRLPBF IRSDS10828-1.pdf?t.download=true&u=5oefqw
IRLR3636TRLPBF
Hersteller: Infineon Technologies
Description: MOSFET N-CH 60V 50A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 6.8mOhm @ 50A, 10V
Power Dissipation (Max): 143W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 100µA
Supplier Device Package: TO-252AA (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 3779 pF @ 50 V
Produkt ist nicht verfügbar
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IRFR5410TRLPBF irfr5410pbf.pdf?fileId=5546d462533600a4015356356f622107
IRFR5410TRLPBF
Hersteller: Infineon Technologies
Description: MOSFET P-CH 100V 13A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
Rds On (Max) @ Id, Vgs: 205mOhm @ 7.8A, 10V
Power Dissipation (Max): 66W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 760 pF @ 25 V
Produkt ist nicht verfügbar
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BCR 149T E6327 BCR149.pdf
BCR 149T E6327
Hersteller: Infineon Technologies
Description: TRANS PREBIAS NPN 50V 0.07A SC75
Packaging: Tape & Reel (TR)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 5mA, 5V
Supplier Device Package: PG-SC75-3D
Current - Collector (Ic) (Max): 70 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 250 mW
Frequency - Transition: 150 MHz
Resistor - Base (R1): 47 kOhms
Resistors Included: R1 Only
Produkt ist nicht verfügbar
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AUIRF7316QTR INFN-S-A0002298726-1.pdf?t.download=true&u=5oefqw
AUIRF7316QTR
Hersteller: Infineon Technologies
Description: MOSFET 2P-CH 30V 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W
Drain to Source Voltage (Vdss): 30V
Input Capacitance (Ciss) (Max) @ Vds: 710pF @ 25V
Rds On (Max) @ Id, Vgs: 58mOhm @ 4.9A, 10V
Gate Charge (Qg) (Max) @ Vgs: 34nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Not For New Designs
Produkt ist nicht verfügbar
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AUIRF7316QTR INFN-S-A0002298726-1.pdf?t.download=true&u=5oefqw
AUIRF7316QTR
Hersteller: Infineon Technologies
Description: MOSFET 2P-CH 30V 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W
Drain to Source Voltage (Vdss): 30V
Input Capacitance (Ciss) (Max) @ Vds: 710pF @ 25V
Rds On (Max) @ Id, Vgs: 58mOhm @ 4.9A, 10V
Gate Charge (Qg) (Max) @ Vgs: 34nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Not For New Designs
auf Bestellung 2 Stücke:
Lieferzeit 10-14 Tag (e)
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CY7C199CN-15ZXC CY7C199CN.pdf
CY7C199CN-15ZXC
Hersteller: Infineon Technologies
Description: IC SRAM 256KBIT PAR 28TSOP I
Packaging: Tray
Package / Case: 28-TSSOP (0.465", 11.80mm Width)
Mounting Type: Surface Mount
Memory Size: 256Kbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 28-TSOP I
Part Status: Obsolete
Write Cycle Time - Word, Page: 15ns
Memory Interface: Parallel
Access Time: 15 ns
Memory Organization: 32K x 8
DigiKey Programmable: Not Verified
auf Bestellung 3122 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
437+1.12 EUR
Mindestbestellmenge: 437
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CY7C199-15ZC CY7C199.pdf
CY7C199-15ZC
Hersteller: Infineon Technologies
Description: IC SRAM 256KBIT 15NS 28TSOP
Packaging: Bag
Package / Case: 28-TSSOP (0.465", 11.80mm Width)
Mounting Type: Surface Mount
Memory Size: 256Kbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 28-TSOP I
Part Status: Obsolete
Write Cycle Time - Word, Page: 15ns
Memory Interface: Parallel
Access Time: 15 ns
Memory Organization: 32K x 8
DigiKey Programmable: Not Verified
auf Bestellung 2958 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
249+1.97 EUR
Mindestbestellmenge: 249
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CY7C199CL-15ZXC CY7C199C%20RevB.pdf
CY7C199CL-15ZXC
Hersteller: Infineon Technologies
Description: IC SRAM 256KBIT PAR 28TSOP I
Packaging: Bag
Package / Case: 28-TSSOP (0.465", 11.80mm Width)
Mounting Type: Surface Mount
Memory Size: 256Kbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 28-TSOP I
Part Status: Obsolete
Write Cycle Time - Word, Page: 15ns
Memory Interface: Parallel
Access Time: 15 ns
Memory Organization: 32K x 8
DigiKey Programmable: Not Verified
auf Bestellung 676 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
360+1.35 EUR
Mindestbestellmenge: 360
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IPA030N10NF2SXKSA1 Infineon-IPA030N10NF2S-DataSheet-v02_00-EN.pdf?fileId=5546d46278d64ffd0179176bf1c41165
IPA030N10NF2SXKSA1
Hersteller: Infineon Technologies
Description: TRENCH >=100V PG-TO220-3
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 83A (Tc)
Rds On (Max) @ Id, Vgs: 3mOhm @ 50A, 10V
Power Dissipation (Max): 41W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 169µA
Supplier Device Package: PG-TO220 Full Pack
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 154 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7300 pF @ 50 V
Produkt ist nicht verfügbar
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IAUZ40N08S5N100ATMA1 Infineon-IAUZ40N08S5N100-DataSheet-v01_00-EN.pdf?fileId=5546d4626f1cf1c5016f1e6c94a801de
IAUZ40N08S5N100ATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 75V 80A 8TSDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 20A, 10V
Power Dissipation (Max): 68W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 27µA
Supplier Device Package: PG-TDSON-8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 24.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1591 pF @ 40 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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IKB15N60TATMA1 Infineon-IKB15N60T-DS-v02_08-EN.pdf?fileId=db3a304412b407950112b4287d223e0a
IKB15N60TATMA1
Hersteller: Infineon Technologies
Description: IGBT TRENCH FS 600V 30A TO263-3
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 34 ns
Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 15A
Supplier Device Package: PG-TO263-3-2
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 17ns/188ns
Switching Energy: 570µJ
Test Condition: 400V, 15A, 15Ohm, 15V
Gate Charge: 87 nC
Part Status: Active
Current - Collector (Ic) (Max): 30 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 45 A
Power - Max: 130 W
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1000+1.48 EUR
Mindestbestellmenge: 1000
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TLE88812TNAKSA1 Infineon-TLE8881-2-DataSheet-v01_00-EN.pdf?fileId=5546d4626cb27db2016d5d74fb3a0492
TLE88812TNAKSA1
Hersteller: Infineon Technologies
Description: ALTERNATOR_IC
Packaging: Tube
Package / Case: TO-220-5
Voltage - Output: 12V
Mounting Type: Through Hole
Number of Outputs: 1
Voltage - Input: 6V ~ 18V
Operating Temperature: -40°C ~ 175°C (TJ)
Supplier Device Package: PG-TO220-5-12
Part Status: Active
Grade: Automotive
Qualification: AEC-Q100
auf Bestellung 398 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+20.26 EUR
10+18.62 EUR
25+17.84 EUR
100+15.72 EUR
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1EDU20I12SVXUMA1 Infineon-1EDS20I12SV-DS-v01_00-EN.pdf?fileId=5546d46145f1f3a40145faf0aa200fc1
1EDU20I12SVXUMA1
Hersteller: Infineon Technologies
Description: DIGITAL ISO 5KV 1CH GATE DVR
Packaging: Tape & Reel (TR)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Technology: Magnetic Coupling
Voltage - Isolation: 5000Vrms
Part Status: Active
Number of Channels: 1
Produkt ist nicht verfügbar
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1EDU20I12SVXUMA1 Infineon-1EDS20I12SV-DS-v01_00-EN.pdf?fileId=5546d46145f1f3a40145faf0aa200fc1
1EDU20I12SVXUMA1
Hersteller: Infineon Technologies
Description: DIGITAL ISO 5KV 1CH GATE DVR
Packaging: Cut Tape (CT)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Technology: Magnetic Coupling
Voltage - Isolation: 5000Vrms
Part Status: Active
Number of Channels: 1
Produkt ist nicht verfügbar
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F4100R12KS4BOSA1 Infineon-F4_100R12KS4-DS-v02_01-en_de.pdf?fileId=db3a304412b407950112b4327b185851
F4100R12KS4BOSA1
Hersteller: Infineon Technologies
Description: IGBT MOD 1200V 130A 660W
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 125°C
Vce(on) (Max) @ Vge, Ic: 3.75V @ 15V, 100A
NTC Thermistor: Yes
Supplier Device Package: Module
Part Status: Active
Current - Collector (Ic) (Max): 130 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 660 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 6.8 nF @ 25 V
auf Bestellung 10 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+173.89 EUR
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SLB9665TT20FW561XUMA1
Hersteller: Infineon Technologies
Description: OPTIGA EMBEDDED SECURITY TRUSTED
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
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SLB9665VQ20FW560XUMA2 SLB9665xx2.0.pdf
SLB9665VQ20FW560XUMA2
Hersteller: Infineon Technologies
Description: SECURITY IC'S/AUTHENTICATION IC'
Packaging: Tape & Reel (TR)
Package / Case: 32-VFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: LPC
Operating Temperature: -20°C ~ 85°C (TA)
Voltage - Supply: 3V ~ 3.6V
Program Memory Type: NVM (7.04kB)
Applications: Trusted Platform Module (TPM)
Core Processor: 16-Bit
Supplier Device Package: PG-VQFN-32-13
Part Status: Not For New Designs
Number of I/O: 1
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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IPD50N06S2L13ATMA2 Infineon-IPD50N06S2L_13-DS-v01_00-en.pdf?fileId=db3a304412b407950112b433e8e55e1a
IPD50N06S2L13ATMA2
Hersteller: Infineon Technologies
Description: MOSFET N-CH 55V 50A TO252-31
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 12.7mOhm @ 34A, 10V
Power Dissipation (Max): 136W (Tc)
Vgs(th) (Max) @ Id: 2V @ 80µA
Supplier Device Package: PG-TO252-3-11
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 69 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2500+0.94 EUR
Mindestbestellmenge: 2500
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IPB110P06LMATMA1 Infineon-IPB110P06LM-DS-v02_00-EN.pdf?fileId=5546d46269e1c019016a03e2d06000ae
IPB110P06LMATMA1
Hersteller: Infineon Technologies
Description: MOSFET P-CH 60V 100A TO263-3
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 11mOhm @ 100A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 2V @ 5.55mA
Supplier Device Package: PG-TO263-3-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 281 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8500 pF @ 30 V
Produkt ist nicht verfügbar
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