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IKW25N120CS7XKSA1 IKW25N120CS7XKSA1 Infineon Technologies Infineon-IKW25N120CS7-DataSheet-v01_00-EN.pdf?fileId=5546d46278d64ffd0178f97da3d005a3 Description: IGBT TRENCH FS 1200V 55A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 150 ns
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 25A
Supplier Device Package: PG-TO247-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 21ns/160ns
Switching Energy: 1.2mJ (on), 1.1mJ (off)
Test Condition: 600V, 25A, 6Ohm, 15V
Gate Charge: 150 nC
Part Status: Active
Current - Collector (Ic) (Max): 55 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 75 A
Power - Max: 250 W
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AUIRLL024ZTR AUIRLL024ZTR Infineon Technologies INFN-S-A0002297050-1.pdf?t.download=true&u=5oefqw Description: MOSFET N-CH 55V 5A SOT223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
Rds On (Max) @ Id, Vgs: 60mOhm @ 3A, 10V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-223
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 380 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
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FS10R12VT3BOMA1 FS10R12VT3BOMA1 Infineon Technologies Infineon-FS10R12VT3-DS-v02_00-en_de.pdf?fileId=db3a304412b407950112b431225b53a0 Description: IGBT MODULE 1200V 16A 64W
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 125°C
Vce(on) (Max) @ Vge, Ic: 2.45V @ 15V, 10A
NTC Thermistor: No
Supplier Device Package: Module
Current - Collector (Ic) (Max): 16 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 64 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 700 pF @ 25 V
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IRU3012CW IRU3012CW Infineon Technologies fundamentals-of-power-semiconductors Description: IC REG BUCK 20SOIC
Packaging: Tube
Package / Case: 20-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Supplier Device Package: 20-SOIC
Part Status: Obsolete
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FF400R12KT3EHOSA1 FF400R12KT3EHOSA1 Infineon Technologies Infineon-FF400R12KT3_E-DS-v02_00-en_de.pdf?fileId=db3a304313b8b5a60113b97aa14b0008 Description: IGBT MOD 1200V 580A 2000W
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: 2 Independent
Operating Temperature: -40°C ~ 125°C
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 400A
NTC Thermistor: No
Supplier Device Package: Module
Part Status: Not For New Designs
Current - Collector (Ic) (Max): 580 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 2000 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 28 nF @ 25 V
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FF400R12KT3PEHOSA1 FF400R12KT3PEHOSA1 Infineon Technologies Infineon-FF400R12KT3P_E-DS-v02_00-EN.pdf?fileId=5546d46253f650570154517a278d6ae6 Description: IGBT MODULE 1200V 400A
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge
Operating Temperature: -40°C ~ 125°C
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 400A
NTC Thermistor: No
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 400 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 28 nF @ 25 V
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CY7C1314KV18-250BZC CY7C1314KV18-250BZC Infineon Technologies download Description: IC SRAM 18MBIT PARALLEL 165FBGA
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TLE42994GMXUMA3 TLE42994GMXUMA3 Infineon Technologies Infineon-TLE42994-DS-v01_20-EN.pdf?fileId=5546d46258fc0bc101595f8524621f51 Description: IC REG LINEAR 5V 150MA PG-DSO-14
Packaging: Tape & Reel (TR)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 150mA
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 1 µA
Voltage - Input (Max): 45V
Number of Regulators: 1
Supplier Device Package: PG-DSO-14
Voltage - Output (Min/Fixed): 5V
Control Features: Enable, Reset
Part Status: Active
PSRR: 66dB (100Hz)
Voltage Dropout (Max): 0.5V @ 100mA
Protection Features: Over Current, Over Temperature, Reverse Polarity, Short Circuit
Current - Supply (Max): 2 mA
Grade: Automotive
Qualification: AEC-Q100
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TLE42994GMXUMA3 TLE42994GMXUMA3 Infineon Technologies Infineon-TLE42994-DS-v01_20-EN.pdf?fileId=5546d46258fc0bc101595f8524621f51 Description: IC REG LINEAR 5V 150MA PG-DSO-14
Packaging: Cut Tape (CT)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 150mA
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 1 µA
Voltage - Input (Max): 45V
Number of Regulators: 1
Supplier Device Package: PG-DSO-14
Voltage - Output (Min/Fixed): 5V
Control Features: Enable, Reset
Part Status: Active
PSRR: 66dB (100Hz)
Voltage Dropout (Max): 0.5V @ 100mA
Protection Features: Over Current, Over Temperature, Reverse Polarity, Short Circuit
Current - Supply (Max): 2 mA
Grade: Automotive
Qualification: AEC-Q100
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IPB051NE8NG IPB051NE8NG Infineon Technologies INFNS16318-1.pdf?t.download=true&u=5oefqw Description: N-CHANNEL POWER MOSFET
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IPB051NE8NGATMA1 IPB051NE8NGATMA1 Infineon Technologies INFNS16318-1.pdf?t.download=true&u=5oefqw Description: N-CHANNEL POWER MOSFET
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BTN70301EPAXUMA1 BTN70301EPAXUMA1 Infineon Technologies Infineon-BTN7030-1EPA-DataSheet-v01_01-EN.pdf?fileId=5546d462749a7c2d0174b68220d93194 Description: IC HALF BRIDGE DRVR 7A TSDSO-14
Features: Diagnostic Enable, Enable, SENSE
Packaging: Tape & Reel (TR)
Package / Case: 14-TSSOP (0.154", 3.90mm Width) Exposed Pad
Mounting Type: Surface Mount
Interface: Logic
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge
Voltage - Supply: 6V ~ 18V
Rds On (Typ): 20mOhm LS, 12mOhm HS
Applications: DC Motors, General Purpose
Current - Output / Channel: 7A
Current - Peak Output: 17A
Technology: SMART7
Supplier Device Package: PG-TSDSO-14
Fault Protection: Current Limiting, Over Current, Over Temperature, Over Voltage, Short Circuit
Load Type: Inductive
Part Status: Active
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BTN70301EPAXUMA1 BTN70301EPAXUMA1 Infineon Technologies Infineon-BTN7030-1EPA-DataSheet-v01_01-EN.pdf?fileId=5546d462749a7c2d0174b68220d93194 Description: IC HALF BRIDGE DRVR 7A TSDSO-14
Features: Diagnostic Enable, Enable, SENSE
Packaging: Cut Tape (CT)
Package / Case: 14-TSSOP (0.154", 3.90mm Width) Exposed Pad
Mounting Type: Surface Mount
Interface: Logic
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge
Voltage - Supply: 6V ~ 18V
Rds On (Typ): 20mOhm LS, 12mOhm HS
Applications: DC Motors, General Purpose
Current - Output / Channel: 7A
Current - Peak Output: 17A
Technology: SMART7
Supplier Device Package: PG-TSDSO-14
Fault Protection: Current Limiting, Over Current, Over Temperature, Over Voltage, Short Circuit
Load Type: Inductive
Part Status: Active
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500+2.26 EUR
1000+2.19 EUR
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TLE7237SLXUMA2 Infineon Technologies Description: IC DRIVER SPI RELAY CTRL 24SSOP
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BTS612N1E3128ABUMA1 BTS612N1E3128ABUMA1 Infineon Technologies INFN-S-A0002952951-1.pdf?t.download=true&u=5oefqw Description: IC PWR SWITCH N-CHAN 1:1 TO263-7
Features: Auto Restart, Status Flag
Packaging: Tape & Reel (TR)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 2
Interface: Parallel
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 160mOhm
Input Type: Non-Inverting
Voltage - Load: 5V ~ 34V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 3.5A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-TO263-7-2
Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, Over Voltage, UVLO
Part Status: Not For New Designs
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TD61N1625KOFHPSA1 Infineon Technologies Description: SCR MODULE PB20-1
Packaging: Tray
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TLV4961-3M TLV4961-3M Infineon Technologies Infineon-TLV4961-3M-DS-v01_00-EN.pdf?fileId=5546d46253f650570154529f327d6fdf Description: TLV4961 - HALL SWITCH
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TLE4961-3K TLE4961-3K Infineon Technologies Infineon-TLE4961_3K-DS-v01_00-en.pdf?fileId=db3a3043397219b601397247ed8d0030 Description: TLE4961 - HALL SWITCH
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TLV49613TBXALA1 Infineon Technologies Infineon-Infineon-TLV4961-3TAB_Hall_Switch-DS-v01_00-DS-v01_00-EN.pdf?fileId=5546d4624e765da5014ede3158d30b70 Description: MAGNETIC SWITCH LATCH TO92S
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TLE49613KXTSA1 TLE49613KXTSA1 Infineon Technologies Infineon-TLE4961_3K-DS-v01_00-en.pdf?fileId=db3a3043397219b601397247ed8d0030 Description: MAGNETIC SWITCH LATCH
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TLE49613MXTMA1 TLE49613MXTMA1 Infineon Technologies Infineon-TLE4961_3M-DS-v01_00-en.pdf?fileId=db3a304338ec6d390138fc7ad91376ac Description: MAGNETIC SWITCH LATCH SOT23-3
Features: Temperature Compensated
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Output Type: Open Drain
Polarization: South Pole
Mounting Type: Surface Mount
Function: Latch
Operating Temperature: -40°C ~ 170°C (TJ)
Voltage - Supply: 3V ~ 32V
Technology: Hall Effect
Sensing Range: 10.4mT Trip, -10.4mT Release
Current - Output (Max): 25mA
Current - Supply (Max): 2.5mA
Supplier Device Package: PG-SOT23-3-15
Test Condition: 25°C
Grade: Automotive
Qualification: AEC-Q100
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18+1 EUR
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IDL12G65C5XUMA2 IDL12G65C5XUMA2 Infineon Technologies Infineon-IDL12G65C5-DS-v02_00-en.pdf?fileId=db3a304342e8be2c014305242a5d5c28 Description: DIODE SIL CARB 650V 12A PGVSON4
Packaging: Tape & Reel (TR)
Package / Case: 4-PowerTSFN
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 360pF @ 1V, 1MHz
Current - Average Rectified (Io): 12A
Supplier Device Package: PG-VSON-4
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 12 A
Current - Reverse Leakage @ Vr: 190 µA @ 650 V
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BTS700201ESPXUMA1 BTS700201ESPXUMA1 Infineon Technologies Infineon-BTS70020-1ESP-DataSheet-v01_10-EN.pdf?fileId=5546d462758f5bd101759850731539ad Description: PROFET PG-TSDSO-24
Packaging: Tape & Reel (TR)
Package / Case: 24-TSSOP (0.154", 3.90mm Width) Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: Logic
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 2.3mOhm
Input Type: Non-Inverting
Voltage - Load: 6V ~ 18V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 23.3A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-TSDSO-24
Fault Protection: Current Limiting (Fixed), Over Temperature, Reverse Current, UVLO
Grade: Automotive
Part Status: Last Time Buy
Qualification: AEC-Q100
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BTS700151ESPXUMA1 BTS700151ESPXUMA1 Infineon Technologies Infineon-BTS70015-1ESP-DataSheet-v01_10-EN.pdf?fileId=5546d462758f5bd101759850638039aa Description: PROFET PG-TSDSO-24
Packaging: Tape & Reel (TR)
Package / Case: 24-TSSOP (0.154", 3.90mm Width) Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: Logic
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 1.7mOhm
Input Type: Non-Inverting
Voltage - Load: 6V ~ 18V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 27.6A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-TSDSO-24
Fault Protection: Current Limiting (Adjustable), Over Temperature, Over Voltage, Reverse Current, UVLO
Part Status: Last Time Buy
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BTS700151ESPXUMA1 BTS700151ESPXUMA1 Infineon Technologies Infineon-BTS70015-1ESP-DataSheet-v01_10-EN.pdf?fileId=5546d462758f5bd101759850638039aa Description: PROFET PG-TSDSO-24
Packaging: Cut Tape (CT)
Package / Case: 24-TSSOP (0.154", 3.90mm Width) Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: Logic
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 1.7mOhm
Input Type: Non-Inverting
Voltage - Load: 6V ~ 18V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 27.6A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-TSDSO-24
Fault Protection: Current Limiting (Adjustable), Over Temperature, Over Voltage, Reverse Current, UVLO
Part Status: Last Time Buy
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BTS70302EPADAUGHBRDTOBO1 BTS70302EPADAUGHBRDTOBO1 Infineon Technologies Infineon-Customer_evaluation_kit%20_description-UserManual-v01_01-EN.pdf?fileId=5546d4626b2d8e69016bac9ebb6b24c7 Description: PROFET +2 12V BTS7030-2EPA DAUGH
Packaging: Box
Function: Switch
Type: Power Management
Contents: Board(s)
Utilized IC / Part: BTS7030-2EPA
Part Status: Active
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SHIELDBTS70802EPZTOBO1 SHIELDBTS70802EPZTOBO1 Infineon Technologies Infineon-PROFET_2_12V_Grade0-ProductBrief-v01_00-EN.pdf?fileId=5546d462712ef9b701715a7bfa906379 Description: PROFET+2 12V GRADE0 BTS7080-2EP
Packaging: Bulk
Function: Switch
Type: Power Management
Contents: Board(s)
Utilized IC / Part: BTS7080-2EPZ
Part Status: Active
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IAUS300N08S5N011TATMA1 IAUS300N08S5N011TATMA1 Infineon Technologies Infineon-IAUS300N08S5N011T-DataSheet-v01_00-EN.pdf?fileId=5546d46276c4f5350176f1ecf7663d49 Description: MOSFET N-CH 80V 300A HDSOP-16-2
Packaging: Tape & Reel (TR)
Package / Case: 16-PowerSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 300A (Tj)
Rds On (Max) @ Id, Vgs: 1.1mOhm @ 100A, 10V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 275µA
Supplier Device Package: PG-HDSOP-16-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 231 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 16250 pF @ 40 V
Grade: Automotive
Qualification: AEC-Q101
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CY8C20336H-24LQXI CY8C20336H-24LQXI Infineon Technologies CY8C20336H%2C446H.pdf Description: IC PSOC CAPSENSE 24MHZ 24QFN
Packaging: Tray
Package / Case: 24-UFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: I2C, SPI
RAM Size: 1K x 8
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.71V ~ 5.5V
Controller Series: CY8C20xx6
Program Memory Type: FLASH (8kB)
Applications: Capacitive Sensing
Core Processor: M8C
Supplier Device Package: 24-QFN (4x4)
Number of I/O: 20
DigiKey Programmable: Not Verified
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IPD90N06S404ATMA2 IPD90N06S404ATMA2 Infineon Technologies INFNS13309-1.pdf?t.download=true&u=5oefqw Description: MOSFET N-CH 60V 90A TO252-31
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 3.8mOhm @ 90A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 4V @ 90µA
Supplier Device Package: PG-TO252-3-11
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 128 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10400 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
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IPD90N06S4L03ATMA2 IPD90N06S4L03ATMA2 Infineon Technologies Infineon-IPD90N06S4L_03-DS-v01_00-en.pdf?fileId=db3a30431ff9881501203869e3b30c7d Description: MOSFET N-CH 60V 90A TO252-31
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 90A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 90µA
Supplier Device Package: PG-TO252-3-11
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13000 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 5000 Stücke:
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IPB90N06S4L04ATMA2 IPB90N06S4L04ATMA2 Infineon Technologies Infineon-I90N06S4L_04-DS-v01_00-en.pdf?fileId=db3a30431ff98815012038d111570ce3 Description: MOSFET N-CH 60V 90A TO263-3
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 3.7mOhm @ 90A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 90µA
Supplier Device Package: PG-TO263-3-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13000 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
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IKW40N120CS7XKSA1 IKW40N120CS7XKSA1 Infineon Technologies Infineon-IKW40N120CS7-DataSheet-v01_00-EN.pdf?fileId=5546d46278d64ffd0178f97d952805a0 Description: IGBT TRENCH FS 1200V 82A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 175 ns
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 40A
Supplier Device Package: PG-TO247-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 27ns/190ns
Switching Energy: 2.55mJ (on), 1.75mJ (off)
Test Condition: 600V, 40A, 4Ohm, 15V
Gate Charge: 230 nC
Part Status: Active
Current - Collector (Ic) (Max): 82 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 357 W
auf Bestellung 393 Stücke:
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BSO040N03MSGXUMA1 BSO040N03MSGXUMA1 Infineon Technologies BSO040N03MS_rev1.0.pdf?folderId=db3a304313d846880113d91d60c500c4&fileId=db3a30431b0626df011b0d4dfc657dd7 Description: MOSFET N-CH 30V 16A 8DSO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Ta)
Rds On (Max) @ Id, Vgs: 4mOhm @ 20A, 10V
Power Dissipation (Max): 1.56W (Ta)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-DSO-8
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 73 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5700 pF @ 15 V
Produkt ist nicht verfügbar
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IKWH60N65WR6XKSA1 IKWH60N65WR6XKSA1 Infineon Technologies Infineon-IKWH60N65WR6-DataSheet-v01_00-EN.pdf?fileId=5546d46279cccfdb0179ce63c00d6fdd Description: IGBT TRENCH FS 650V 100A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.85V @ 15V, 60A
Supplier Device Package: PG-TO247-3-32
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 35ns/311ns
Switching Energy: 1.82mJ (on), 850µJ (off)
Test Condition: 400V, 60A, 15Ohm, 15V
Gate Charge: 174 nC
Part Status: Active
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 180 A
Power - Max: 240 W
auf Bestellung 220 Stücke:
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FS75R12W2T4BOMA1 FS75R12W2T4BOMA1 Infineon Technologies Infineon-FS75R12W2T4-DS-v02_03-en_de.pdf?fileId=db3a30431add1d95011aed58c83102d1 Description: IGBT MOD 1200V 107A 375W
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Full Bridge
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 75A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 107 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 375 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 4.3 nF @ 25 V
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BC847BE6327 BC847BE6327 Infineon Technologies INFNS14907-1.pdf?t.download=true&u=5oefqw Description: BIPOLAR GEN PURPOSE TRANSISTOR
auf Bestellung 65228 Stücke:
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IM240M6Y2BAKSA1 Infineon Technologies IM240-M6xxB.pdf Description: MODULE IPM 3PHASE DIP23A
Packaging: Tube
Package / Case: 23-DIP Module (0.573", 14.55mm)
Mounting Type: Through Hole
Type: IGBT
Configuration: 3 Phase Inverter
Voltage - Isolation: 1900Vrms
Part Status: Obsolete
Current: 4 A
Voltage: 600 V
Produkt ist nicht verfügbar
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PX8897EDQGR2ER1240AXUMA1 Infineon Technologies Description: IC REGULATOR PG-VQFN-48-2
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IPDD60R045CFD7XTMA1 IPDD60R045CFD7XTMA1 Infineon Technologies Infineon-IPDD60R045CFD7-DataSheet-v02_00-EN.pdf?fileId=5546d4627506bb3201751c2e742942a8 Description: MOSFET N-CH 600V 61A HDSOP-10
Packaging: Cut Tape (CT)
Package / Case: 10-PowerSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 61A (Tc)
Rds On (Max) @ Id, Vgs: 45mOhm @ 18A, 10V
Power Dissipation (Max): 379W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 900µA
Supplier Device Package: PG-HDSOP-10-1
Part Status: Active
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 79 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3194 pF @ 400 V
auf Bestellung 1680 Stücke:
Lieferzeit 10-14 Tag (e)
2+12.78 EUR
10+9.27 EUR
100+6.84 EUR
500+6 EUR
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IM535U6DXKMA1 IM535U6DXKMA1 Infineon Technologies Infineon-IM535-U6D-DataSheet-v02_00-EN.pdf?fileId=5546d4627506bb3201754a6d015075fd Description: IM535U6DXKMA1
Packaging: Tube
Mounting Type: Through Hole
Type: IGBT
Configuration: 3 Phase
Voltage - Isolation: 2000Vrms
Part Status: Active
Current: 30 A
Voltage: 600 V
auf Bestellung 529 Stücke:
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1+29.53 EUR
14+20.24 EUR
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IRF6612TR1 IRF6612TR1 Infineon Technologies IRF6612,TR1.pdf Description: MOSFET N-CH 30V 24A DIRECTFET
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IRF6612TR1 IRF6612TR1 Infineon Technologies IRF6612,TR1.pdf Description: MOSFET N-CH 30V 24A DIRECTFET
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IKW15N120CS7XKSA1 IKW15N120CS7XKSA1 Infineon Technologies Infineon-IKW15N120CS7-DataSheet-v01_00-EN.pdf?fileId=5546d46278d64ffd0178f97db2b905a6 Description: IGBT TRENCH FS 1200V 36A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 135 ns
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 15A
Supplier Device Package: PG-TO247-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 23ns/170ns
Switching Energy: 750µJ (on), 700µJ (off)
Test Condition: 600V, 15A, 10Ohm, 15V
Gate Charge: 95 nC
Part Status: Active
Current - Collector (Ic) (Max): 36 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 45 A
Power - Max: 176 W
auf Bestellung 634 Stücke:
Lieferzeit 10-14 Tag (e)
3+7.67 EUR
30+4.3 EUR
120+3.55 EUR
510+3.01 EUR
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REFTWILD8150E60V1ATOBO1 REFTWILD8150E60V1ATOBO1 Infineon Technologies Infineon-ILD8150_ILD8150E-DataSheet-v01_04-EN.pdf?fileId=5546d462696dbf120169ba96613f4c20 Description: EVAL BOARD FOR ILD8150E
Packaging: Bulk
Features: Dimmable
Voltage - Output: 10V ~ 56V
Voltage - Input: 16V ~ 70V
Current - Output / Channel: 1.05A
Utilized IC / Part: ILD8150E
Supplied Contents: Board(s)
Outputs and Type: 2 Non-Isolated Outputs
Part Status: Active
Contents: Board(s)
auf Bestellung 3 Stücke:
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1+108.61 EUR
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IAUC80N04S6N036ATMA1 IAUC80N04S6N036ATMA1 Infineon Technologies Infineon-IAUC80N04S6N036-DataSheet-v01_00-EN.pdf?fileId=5546d4626afcd350016b1c881e60109f Description: IAUC80N04S6N036ATMA1
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 3.68mOhm @ 40A, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 3V @ 18µA
Supplier Device Package: PG-TDSON-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1338 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
5000+0.53 EUR
Mindestbestellmenge: 5000
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IAUC80N04S6N036ATMA1 IAUC80N04S6N036ATMA1 Infineon Technologies Infineon-IAUC80N04S6N036-DataSheet-v01_00-EN.pdf?fileId=5546d4626afcd350016b1c881e60109f Description: IAUC80N04S6N036ATMA1
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 3.68mOhm @ 40A, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 3V @ 18µA
Supplier Device Package: PG-TDSON-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1338 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 8759 Stücke:
Lieferzeit 10-14 Tag (e)
9+1.99 EUR
13+1.36 EUR
100+0.9 EUR
500+0.7 EUR
1000+0.62 EUR
2000+0.59 EUR
Mindestbestellmenge: 9
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IAUC80N04S6L032ATMA1 IAUC80N04S6L032ATMA1 Infineon Technologies Infineon-IAUC80N04S6L032-DataSheet-v01_00-EN.pdf?fileId=5546d4626afcd350016b1ca3b4621216 Description: IAUC80N04S6L032ATMA1
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 3.29mOhm @ 40A, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 2V @ 18µA
Supplier Device Package: PG-TDSON-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1515 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
5000+0.5 EUR
Mindestbestellmenge: 5000
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IAUC80N04S6L032ATMA1 IAUC80N04S6L032ATMA1 Infineon Technologies Infineon-IAUC80N04S6L032-DataSheet-v01_00-EN.pdf?fileId=5546d4626afcd350016b1ca3b4621216 Description: IAUC80N04S6L032ATMA1
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 3.29mOhm @ 40A, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 2V @ 18µA
Supplier Device Package: PG-TDSON-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1515 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 6244 Stücke:
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9+2.08 EUR
14+1.31 EUR
100+0.87 EUR
500+0.68 EUR
1000+0.62 EUR
2000+0.58 EUR
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T1080N04TOFXPSA1 T1080N04TOFXPSA1 Infineon Technologies Infineon-T1080N-DS-v03_01-en_de.pdf?fileId=db3a3043284aacd8012863528c2a5301 Description: SCR MODULE 600V 2000A DO-200AB
Packaging: Bulk
Package / Case: DO-200AA, A-PUK
Mounting Type: Clamp On
Operating Temperature: -40°C ~ 140°C
Structure: Single
Current - Hold (Ih) (Max): 200 mA
Current - Gate Trigger (Igt) (Max): 200 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 16000A @ 50Hz
Number of SCRs, Diodes: 1 SCR
Current - On State (It (AV)) (Max): 1078 A
Voltage - Gate Trigger (Vgt) (Max): 2 V
Part Status: Obsolete
Current - On State (It (RMS)) (Max): 2000 A
Voltage - Off State: 600 V
auf Bestellung 6 Stücke:
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4+140.25 EUR
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IAUS260N10S5N019TATMA1 IAUS260N10S5N019TATMA1 Infineon Technologies Infineon-IAUS260N10S5N019T-DataSheet-v01_00-EN.pdf?fileId=5546d4627617cd8301762e04616a61b8 Description: MOSFET N-CH 100V 260A HDSOP-16-2
Packaging: Tape & Reel (TR)
Package / Case: 16-PowerSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 260A (Tj)
Rds On (Max) @ Id, Vgs: 1.9mOhm @ 100A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 210µA
Supplier Device Package: PG-HDSOP-16-2
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 166 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11830 pF @ 50 V
Qualification: AEC-Q101
auf Bestellung 1800 Stücke:
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1800+3.89 EUR
Mindestbestellmenge: 1800
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IAUS260N10S5N019TATMA1 IAUS260N10S5N019TATMA1 Infineon Technologies Infineon-IAUS260N10S5N019T-DataSheet-v01_00-EN.pdf?fileId=5546d4627617cd8301762e04616a61b8 Description: MOSFET N-CH 100V 260A HDSOP-16-2
Packaging: Cut Tape (CT)
Package / Case: 16-PowerSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 260A (Tj)
Rds On (Max) @ Id, Vgs: 1.9mOhm @ 100A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 210µA
Supplier Device Package: PG-HDSOP-16-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 166 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11830 pF @ 50 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 3386 Stücke:
Lieferzeit 10-14 Tag (e)
2+9.75 EUR
10+6.56 EUR
100+4.76 EUR
Mindestbestellmenge: 2
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IPD60N10S412ATMA1 IPD60N10S412ATMA1 Infineon Technologies fundamentals-of-power-semiconductors Description: MOSFET N-CH 100V 60A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 12.2mOhm @ 60A, 10V
Power Dissipation (Max): 94W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 46µA
Supplier Device Package: PG-TO252-3-313
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2470 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
2500+0.93 EUR
Mindestbestellmenge: 2500
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IPD60N10S412ATMA1 IPD60N10S412ATMA1 Infineon Technologies fundamentals-of-power-semiconductors Description: MOSFET N-CH 100V 60A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 12.2mOhm @ 60A, 10V
Power Dissipation (Max): 94W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 46µA
Supplier Device Package: PG-TO252-3-313
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2470 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 5704 Stücke:
Lieferzeit 10-14 Tag (e)
7+2.73 EUR
10+1.85 EUR
100+1.32 EUR
500+1.15 EUR
1000+1.06 EUR
Mindestbestellmenge: 7
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IRGC49B120UB Infineon Technologies Short_Form_Cat_2016.pdf Description: IGBT CHIP
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.25V @ 15V, 10A
Supplier Device Package: Die
IGBT Type: NPT
Part Status: Obsolete
Current - Collector (Ic) (Max): 50 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Produkt ist nicht verfügbar
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CY88155PFT-G-110-JN-EFE1 CY88155PFT-G-110-JN-EFE1 Infineon Technologies download Description: IC FANOUT BUFFER 8TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Output: CMOS
Frequency - Max: 25MHz
Type: Fanout Buffer (Distribution), Spread Spectrum Clock Generator
Input: Crystal
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3V ~ 3.6V
Ratio - Input:Output: 1:2
Differential - Input:Output: No/No
Supplier Device Package: 8-TSSOP
PLL: Yes with Bypass
Divider/Multiplier: No/Yes
Part Status: Obsolete
Number of Circuits: 1
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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CY88155PFT-G-110-JN-ERE1 CY88155PFT-G-110-JN-ERE1 Infineon Technologies download Description: IC FANOUT BUFFER 8TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Output: CMOS
Frequency - Max: 25MHz
Type: Fanout Buffer (Distribution), Spread Spectrum Clock Generator
Input: Crystal
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3V ~ 3.6V
Ratio - Input:Output: 1:2
Differential - Input:Output: No/No
Supplier Device Package: 8-TSSOP
PLL: Yes with Bypass
Divider/Multiplier: No/Yes
Part Status: Obsolete
Number of Circuits: 1
DigiKey Programmable: Not Verified
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MB95F118ASPMT-G-110SPE1 Infineon Technologies Description: IC MCU
Packaging: Bulk
Part Status: Obsolete
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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PX8746JDNG029XTMA1 Infineon Technologies Description: LED PX8746JDNG029XTMA1
Produkt ist nicht verfügbar
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IPP019N08NF2SAKMA1 IPP019N08NF2SAKMA1 Infineon Technologies Infineon-IPP019N08NF2S-DataSheet-v02_00-EN.pdf?fileId=5546d46276c4f5350176f7027bd71695 Description: TRENCH 40<-<100V
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 32A (Ta), 191A (Tc)
Rds On (Max) @ Id, Vgs: 1.9mOhm @ 100A, 10V
Power Dissipation (Max): 3.8W (Ta), 250W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 194µA
Supplier Device Package: PG-TO220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 186 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8700 pF @ 40 V
auf Bestellung 1494 Stücke:
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4+5.58 EUR
50+2.83 EUR
100+2.56 EUR
500+2.09 EUR
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IKW25N120CS7XKSA1 Infineon-IKW25N120CS7-DataSheet-v01_00-EN.pdf?fileId=5546d46278d64ffd0178f97da3d005a3
IKW25N120CS7XKSA1
Hersteller: Infineon Technologies
Description: IGBT TRENCH FS 1200V 55A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 150 ns
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 25A
Supplier Device Package: PG-TO247-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 21ns/160ns
Switching Energy: 1.2mJ (on), 1.1mJ (off)
Test Condition: 600V, 25A, 6Ohm, 15V
Gate Charge: 150 nC
Part Status: Active
Current - Collector (Ic) (Max): 55 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 75 A
Power - Max: 250 W
Produkt ist nicht verfügbar
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AUIRLL024ZTR INFN-S-A0002297050-1.pdf?t.download=true&u=5oefqw
AUIRLL024ZTR
Hersteller: Infineon Technologies
Description: MOSFET N-CH 55V 5A SOT223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
Rds On (Max) @ Id, Vgs: 60mOhm @ 3A, 10V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-223
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 380 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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FS10R12VT3BOMA1 Infineon-FS10R12VT3-DS-v02_00-en_de.pdf?fileId=db3a304412b407950112b431225b53a0
FS10R12VT3BOMA1
Hersteller: Infineon Technologies
Description: IGBT MODULE 1200V 16A 64W
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 125°C
Vce(on) (Max) @ Vge, Ic: 2.45V @ 15V, 10A
NTC Thermistor: No
Supplier Device Package: Module
Current - Collector (Ic) (Max): 16 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 64 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 700 pF @ 25 V
auf Bestellung 118 Stücke:
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Anzahl Preis
16+32.36 EUR
Mindestbestellmenge: 16
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IRU3012CW fundamentals-of-power-semiconductors
IRU3012CW
Hersteller: Infineon Technologies
Description: IC REG BUCK 20SOIC
Packaging: Tube
Package / Case: 20-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Supplier Device Package: 20-SOIC
Part Status: Obsolete
Produkt ist nicht verfügbar
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FF400R12KT3EHOSA1 Infineon-FF400R12KT3_E-DS-v02_00-en_de.pdf?fileId=db3a304313b8b5a60113b97aa14b0008
FF400R12KT3EHOSA1
Hersteller: Infineon Technologies
Description: IGBT MOD 1200V 580A 2000W
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: 2 Independent
Operating Temperature: -40°C ~ 125°C
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 400A
NTC Thermistor: No
Supplier Device Package: Module
Part Status: Not For New Designs
Current - Collector (Ic) (Max): 580 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 2000 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 28 nF @ 25 V
auf Bestellung 193 Stücke:
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Anzahl Preis
2+251.08 EUR
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FF400R12KT3PEHOSA1 Infineon-FF400R12KT3P_E-DS-v02_00-EN.pdf?fileId=5546d46253f650570154517a278d6ae6
FF400R12KT3PEHOSA1
Hersteller: Infineon Technologies
Description: IGBT MODULE 1200V 400A
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge
Operating Temperature: -40°C ~ 125°C
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 400A
NTC Thermistor: No
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 400 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 28 nF @ 25 V
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Anzahl Preis
2+259.49 EUR
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CY7C1314KV18-250BZC download
CY7C1314KV18-250BZC
Hersteller: Infineon Technologies
Description: IC SRAM 18MBIT PARALLEL 165FBGA
auf Bestellung 116 Stücke:
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Anzahl Preis
2+15.77 EUR
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TLE42994GMXUMA3 Infineon-TLE42994-DS-v01_20-EN.pdf?fileId=5546d46258fc0bc101595f8524621f51
TLE42994GMXUMA3
Hersteller: Infineon Technologies
Description: IC REG LINEAR 5V 150MA PG-DSO-14
Packaging: Tape & Reel (TR)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 150mA
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 1 µA
Voltage - Input (Max): 45V
Number of Regulators: 1
Supplier Device Package: PG-DSO-14
Voltage - Output (Min/Fixed): 5V
Control Features: Enable, Reset
Part Status: Active
PSRR: 66dB (100Hz)
Voltage Dropout (Max): 0.5V @ 100mA
Protection Features: Over Current, Over Temperature, Reverse Polarity, Short Circuit
Current - Supply (Max): 2 mA
Grade: Automotive
Qualification: AEC-Q100
auf Bestellung 2500 Stücke:
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Anzahl Preis
2500+1.45 EUR
Mindestbestellmenge: 2500
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TLE42994GMXUMA3 Infineon-TLE42994-DS-v01_20-EN.pdf?fileId=5546d46258fc0bc101595f8524621f51
TLE42994GMXUMA3
Hersteller: Infineon Technologies
Description: IC REG LINEAR 5V 150MA PG-DSO-14
Packaging: Cut Tape (CT)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 150mA
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 1 µA
Voltage - Input (Max): 45V
Number of Regulators: 1
Supplier Device Package: PG-DSO-14
Voltage - Output (Min/Fixed): 5V
Control Features: Enable, Reset
Part Status: Active
PSRR: 66dB (100Hz)
Voltage Dropout (Max): 0.5V @ 100mA
Protection Features: Over Current, Over Temperature, Reverse Polarity, Short Circuit
Current - Supply (Max): 2 mA
Grade: Automotive
Qualification: AEC-Q100
auf Bestellung 4765 Stücke:
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Anzahl Preis
6+3.17 EUR
10+2.34 EUR
25+2.13 EUR
100+1.9 EUR
250+1.79 EUR
500+1.72 EUR
1000+1.67 EUR
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IPB051NE8NG INFNS16318-1.pdf?t.download=true&u=5oefqw
IPB051NE8NG
Hersteller: Infineon Technologies
Description: N-CHANNEL POWER MOSFET
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Anzahl Preis
198+2.52 EUR
Mindestbestellmenge: 198
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IPB051NE8NGATMA1 INFNS16318-1.pdf?t.download=true&u=5oefqw
IPB051NE8NGATMA1
Hersteller: Infineon Technologies
Description: N-CHANNEL POWER MOSFET
Produkt ist nicht verfügbar
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BTN70301EPAXUMA1 Infineon-BTN7030-1EPA-DataSheet-v01_01-EN.pdf?fileId=5546d462749a7c2d0174b68220d93194
BTN70301EPAXUMA1
Hersteller: Infineon Technologies
Description: IC HALF BRIDGE DRVR 7A TSDSO-14
Features: Diagnostic Enable, Enable, SENSE
Packaging: Tape & Reel (TR)
Package / Case: 14-TSSOP (0.154", 3.90mm Width) Exposed Pad
Mounting Type: Surface Mount
Interface: Logic
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge
Voltage - Supply: 6V ~ 18V
Rds On (Typ): 20mOhm LS, 12mOhm HS
Applications: DC Motors, General Purpose
Current - Output / Channel: 7A
Current - Peak Output: 17A
Technology: SMART7
Supplier Device Package: PG-TSDSO-14
Fault Protection: Current Limiting, Over Current, Over Temperature, Over Voltage, Short Circuit
Load Type: Inductive
Part Status: Active
auf Bestellung 3000 Stücke:
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Anzahl Preis
3000+2.11 EUR
Mindestbestellmenge: 3000
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BTN70301EPAXUMA1 Infineon-BTN7030-1EPA-DataSheet-v01_01-EN.pdf?fileId=5546d462749a7c2d0174b68220d93194
BTN70301EPAXUMA1
Hersteller: Infineon Technologies
Description: IC HALF BRIDGE DRVR 7A TSDSO-14
Features: Diagnostic Enable, Enable, SENSE
Packaging: Cut Tape (CT)
Package / Case: 14-TSSOP (0.154", 3.90mm Width) Exposed Pad
Mounting Type: Surface Mount
Interface: Logic
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge
Voltage - Supply: 6V ~ 18V
Rds On (Typ): 20mOhm LS, 12mOhm HS
Applications: DC Motors, General Purpose
Current - Output / Channel: 7A
Current - Peak Output: 17A
Technology: SMART7
Supplier Device Package: PG-TSDSO-14
Fault Protection: Current Limiting, Over Current, Over Temperature, Over Voltage, Short Circuit
Load Type: Inductive
Part Status: Active
auf Bestellung 3425 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5+4.07 EUR
10+3.02 EUR
25+2.76 EUR
100+2.48 EUR
250+2.34 EUR
500+2.26 EUR
1000+2.19 EUR
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TLE7237SLXUMA2
Hersteller: Infineon Technologies
Description: IC DRIVER SPI RELAY CTRL 24SSOP
Produkt ist nicht verfügbar
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BTS612N1E3128ABUMA1 INFN-S-A0002952951-1.pdf?t.download=true&u=5oefqw
BTS612N1E3128ABUMA1
Hersteller: Infineon Technologies
Description: IC PWR SWITCH N-CHAN 1:1 TO263-7
Features: Auto Restart, Status Flag
Packaging: Tape & Reel (TR)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 2
Interface: Parallel
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 160mOhm
Input Type: Non-Inverting
Voltage - Load: 5V ~ 34V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 3.5A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-TO263-7-2
Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, Over Voltage, UVLO
Part Status: Not For New Designs
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TD61N1625KOFHPSA1
Hersteller: Infineon Technologies
Description: SCR MODULE PB20-1
Packaging: Tray
Produkt ist nicht verfügbar
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TLV4961-3M Infineon-TLV4961-3M-DS-v01_00-EN.pdf?fileId=5546d46253f650570154529f327d6fdf
TLV4961-3M
Hersteller: Infineon Technologies
Description: TLV4961 - HALL SWITCH
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Anzahl Preis
1508+0.33 EUR
Mindestbestellmenge: 1508
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TLE4961-3K Infineon-TLE4961_3K-DS-v01_00-en.pdf?fileId=db3a3043397219b601397247ed8d0030
TLE4961-3K
Hersteller: Infineon Technologies
Description: TLE4961 - HALL SWITCH
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1016+0.5 EUR
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TLV49613TBXALA1 Infineon-Infineon-TLV4961-3TAB_Hall_Switch-DS-v01_00-DS-v01_00-EN.pdf?fileId=5546d4624e765da5014ede3158d30b70
Hersteller: Infineon Technologies
Description: MAGNETIC SWITCH LATCH TO92S
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TLE49613KXTSA1 Infineon-TLE4961_3K-DS-v01_00-en.pdf?fileId=db3a3043397219b601397247ed8d0030
TLE49613KXTSA1
Hersteller: Infineon Technologies
Description: MAGNETIC SWITCH LATCH
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TLE49613MXTMA1 Infineon-TLE4961_3M-DS-v01_00-en.pdf?fileId=db3a304338ec6d390138fc7ad91376ac
TLE49613MXTMA1
Hersteller: Infineon Technologies
Description: MAGNETIC SWITCH LATCH SOT23-3
Features: Temperature Compensated
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Output Type: Open Drain
Polarization: South Pole
Mounting Type: Surface Mount
Function: Latch
Operating Temperature: -40°C ~ 170°C (TJ)
Voltage - Supply: 3V ~ 32V
Technology: Hall Effect
Sensing Range: 10.4mT Trip, -10.4mT Release
Current - Output (Max): 25mA
Current - Supply (Max): 2.5mA
Supplier Device Package: PG-SOT23-3-15
Test Condition: 25°C
Grade: Automotive
Qualification: AEC-Q100
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
14+1.32 EUR
18+1 EUR
25+0.86 EUR
50+0.83 EUR
100+0.71 EUR
500+0.62 EUR
1000+0.54 EUR
5000+0.48 EUR
Mindestbestellmenge: 14
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IDL12G65C5XUMA2 Infineon-IDL12G65C5-DS-v02_00-en.pdf?fileId=db3a304342e8be2c014305242a5d5c28
IDL12G65C5XUMA2
Hersteller: Infineon Technologies
Description: DIODE SIL CARB 650V 12A PGVSON4
Packaging: Tape & Reel (TR)
Package / Case: 4-PowerTSFN
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 360pF @ 1V, 1MHz
Current - Average Rectified (Io): 12A
Supplier Device Package: PG-VSON-4
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 12 A
Current - Reverse Leakage @ Vr: 190 µA @ 650 V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+2.77 EUR
Mindestbestellmenge: 3000
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BTS700201ESPXUMA1 Infineon-BTS70020-1ESP-DataSheet-v01_10-EN.pdf?fileId=5546d462758f5bd101759850731539ad
BTS700201ESPXUMA1
Hersteller: Infineon Technologies
Description: PROFET PG-TSDSO-24
Packaging: Tape & Reel (TR)
Package / Case: 24-TSSOP (0.154", 3.90mm Width) Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: Logic
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 2.3mOhm
Input Type: Non-Inverting
Voltage - Load: 6V ~ 18V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 23.3A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-TSDSO-24
Fault Protection: Current Limiting (Fixed), Over Temperature, Reverse Current, UVLO
Grade: Automotive
Part Status: Last Time Buy
Qualification: AEC-Q100
Produkt ist nicht verfügbar
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BTS700151ESPXUMA1 Infineon-BTS70015-1ESP-DataSheet-v01_10-EN.pdf?fileId=5546d462758f5bd101759850638039aa
BTS700151ESPXUMA1
Hersteller: Infineon Technologies
Description: PROFET PG-TSDSO-24
Packaging: Tape & Reel (TR)
Package / Case: 24-TSSOP (0.154", 3.90mm Width) Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: Logic
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 1.7mOhm
Input Type: Non-Inverting
Voltage - Load: 6V ~ 18V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 27.6A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-TSDSO-24
Fault Protection: Current Limiting (Adjustable), Over Temperature, Over Voltage, Reverse Current, UVLO
Part Status: Last Time Buy
Produkt ist nicht verfügbar
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BTS700151ESPXUMA1 Infineon-BTS70015-1ESP-DataSheet-v01_10-EN.pdf?fileId=5546d462758f5bd101759850638039aa
BTS700151ESPXUMA1
Hersteller: Infineon Technologies
Description: PROFET PG-TSDSO-24
Packaging: Cut Tape (CT)
Package / Case: 24-TSSOP (0.154", 3.90mm Width) Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: Logic
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 1.7mOhm
Input Type: Non-Inverting
Voltage - Load: 6V ~ 18V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 27.6A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-TSDSO-24
Fault Protection: Current Limiting (Adjustable), Over Temperature, Over Voltage, Reverse Current, UVLO
Part Status: Last Time Buy
auf Bestellung 6 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+7.99 EUR
Mindestbestellmenge: 3
Im Einkaufswagen  Stück im Wert von  UAH
BTS70302EPADAUGHBRDTOBO1 Infineon-Customer_evaluation_kit%20_description-UserManual-v01_01-EN.pdf?fileId=5546d4626b2d8e69016bac9ebb6b24c7
BTS70302EPADAUGHBRDTOBO1
Hersteller: Infineon Technologies
Description: PROFET +2 12V BTS7030-2EPA DAUGH
Packaging: Box
Function: Switch
Type: Power Management
Contents: Board(s)
Utilized IC / Part: BTS7030-2EPA
Part Status: Active
auf Bestellung 3 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+79.18 EUR
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SHIELDBTS70802EPZTOBO1 Infineon-PROFET_2_12V_Grade0-ProductBrief-v01_00-EN.pdf?fileId=5546d462712ef9b701715a7bfa906379
SHIELDBTS70802EPZTOBO1
Hersteller: Infineon Technologies
Description: PROFET+2 12V GRADE0 BTS7080-2EP
Packaging: Bulk
Function: Switch
Type: Power Management
Contents: Board(s)
Utilized IC / Part: BTS7080-2EPZ
Part Status: Active
auf Bestellung 2 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+148.72 EUR
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IAUS300N08S5N011TATMA1 Infineon-IAUS300N08S5N011T-DataSheet-v01_00-EN.pdf?fileId=5546d46276c4f5350176f1ecf7663d49
IAUS300N08S5N011TATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 80V 300A HDSOP-16-2
Packaging: Tape & Reel (TR)
Package / Case: 16-PowerSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 300A (Tj)
Rds On (Max) @ Id, Vgs: 1.1mOhm @ 100A, 10V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 275µA
Supplier Device Package: PG-HDSOP-16-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 231 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 16250 pF @ 40 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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CY8C20336H-24LQXI CY8C20336H%2C446H.pdf
CY8C20336H-24LQXI
Hersteller: Infineon Technologies
Description: IC PSOC CAPSENSE 24MHZ 24QFN
Packaging: Tray
Package / Case: 24-UFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: I2C, SPI
RAM Size: 1K x 8
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.71V ~ 5.5V
Controller Series: CY8C20xx6
Program Memory Type: FLASH (8kB)
Applications: Capacitive Sensing
Core Processor: M8C
Supplier Device Package: 24-QFN (4x4)
Number of I/O: 20
DigiKey Programmable: Not Verified
auf Bestellung 8677 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
113+4.34 EUR
Mindestbestellmenge: 113
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IPD90N06S404ATMA2 INFNS13309-1.pdf?t.download=true&u=5oefqw
IPD90N06S404ATMA2
Hersteller: Infineon Technologies
Description: MOSFET N-CH 60V 90A TO252-31
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 3.8mOhm @ 90A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 4V @ 90µA
Supplier Device Package: PG-TO252-3-11
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 128 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10400 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2500+1.17 EUR
Mindestbestellmenge: 2500
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IPD90N06S4L03ATMA2 Infineon-IPD90N06S4L_03-DS-v01_00-en.pdf?fileId=db3a30431ff9881501203869e3b30c7d
IPD90N06S4L03ATMA2
Hersteller: Infineon Technologies
Description: MOSFET N-CH 60V 90A TO252-31
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 90A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 90µA
Supplier Device Package: PG-TO252-3-11
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13000 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2500+1.21 EUR
Mindestbestellmenge: 2500
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IPB90N06S4L04ATMA2 Infineon-I90N06S4L_04-DS-v01_00-en.pdf?fileId=db3a30431ff98815012038d111570ce3
IPB90N06S4L04ATMA2
Hersteller: Infineon Technologies
Description: MOSFET N-CH 60V 90A TO263-3
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 3.7mOhm @ 90A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 90µA
Supplier Device Package: PG-TO263-3-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13000 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1000+1.6 EUR
Mindestbestellmenge: 1000
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IKW40N120CS7XKSA1 Infineon-IKW40N120CS7-DataSheet-v01_00-EN.pdf?fileId=5546d46278d64ffd0178f97d952805a0
IKW40N120CS7XKSA1
Hersteller: Infineon Technologies
Description: IGBT TRENCH FS 1200V 82A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 175 ns
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 40A
Supplier Device Package: PG-TO247-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 27ns/190ns
Switching Energy: 2.55mJ (on), 1.75mJ (off)
Test Condition: 600V, 40A, 4Ohm, 15V
Gate Charge: 230 nC
Part Status: Active
Current - Collector (Ic) (Max): 82 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 357 W
auf Bestellung 393 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+10.4 EUR
30+5.96 EUR
120+4.99 EUR
Mindestbestellmenge: 2
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BSO040N03MSGXUMA1 BSO040N03MS_rev1.0.pdf?folderId=db3a304313d846880113d91d60c500c4&fileId=db3a30431b0626df011b0d4dfc657dd7
BSO040N03MSGXUMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 30V 16A 8DSO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Ta)
Rds On (Max) @ Id, Vgs: 4mOhm @ 20A, 10V
Power Dissipation (Max): 1.56W (Ta)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-DSO-8
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 73 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5700 pF @ 15 V
Produkt ist nicht verfügbar
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IKWH60N65WR6XKSA1 Infineon-IKWH60N65WR6-DataSheet-v01_00-EN.pdf?fileId=5546d46279cccfdb0179ce63c00d6fdd
IKWH60N65WR6XKSA1
Hersteller: Infineon Technologies
Description: IGBT TRENCH FS 650V 100A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.85V @ 15V, 60A
Supplier Device Package: PG-TO247-3-32
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 35ns/311ns
Switching Energy: 1.82mJ (on), 850µJ (off)
Test Condition: 400V, 60A, 15Ohm, 15V
Gate Charge: 174 nC
Part Status: Active
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 180 A
Power - Max: 240 W
auf Bestellung 220 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+6.3 EUR
30+3.46 EUR
120+2.84 EUR
Mindestbestellmenge: 3
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FS75R12W2T4BOMA1 Infineon-FS75R12W2T4-DS-v02_03-en_de.pdf?fileId=db3a30431add1d95011aed58c83102d1
FS75R12W2T4BOMA1
Hersteller: Infineon Technologies
Description: IGBT MOD 1200V 107A 375W
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Full Bridge
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 75A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 107 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 375 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 4.3 nF @ 25 V
auf Bestellung 8 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+88.7 EUR
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BC847BE6327 INFNS14907-1.pdf?t.download=true&u=5oefqw
BC847BE6327
Hersteller: Infineon Technologies
Description: BIPOLAR GEN PURPOSE TRANSISTOR
auf Bestellung 65228 Stücke:
Lieferzeit 10-14 Tag (e)
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IM240M6Y2BAKSA1 IM240-M6xxB.pdf
Hersteller: Infineon Technologies
Description: MODULE IPM 3PHASE DIP23A
Packaging: Tube
Package / Case: 23-DIP Module (0.573", 14.55mm)
Mounting Type: Through Hole
Type: IGBT
Configuration: 3 Phase Inverter
Voltage - Isolation: 1900Vrms
Part Status: Obsolete
Current: 4 A
Voltage: 600 V
Produkt ist nicht verfügbar
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PX8897EDQGR2ER1240AXUMA1
Hersteller: Infineon Technologies
Description: IC REGULATOR PG-VQFN-48-2
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPDD60R045CFD7XTMA1 Infineon-IPDD60R045CFD7-DataSheet-v02_00-EN.pdf?fileId=5546d4627506bb3201751c2e742942a8
IPDD60R045CFD7XTMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 600V 61A HDSOP-10
Packaging: Cut Tape (CT)
Package / Case: 10-PowerSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 61A (Tc)
Rds On (Max) @ Id, Vgs: 45mOhm @ 18A, 10V
Power Dissipation (Max): 379W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 900µA
Supplier Device Package: PG-HDSOP-10-1
Part Status: Active
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 79 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3194 pF @ 400 V
auf Bestellung 1680 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+12.78 EUR
10+9.27 EUR
100+6.84 EUR
500+6 EUR
Mindestbestellmenge: 2
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IM535U6DXKMA1 Infineon-IM535-U6D-DataSheet-v02_00-EN.pdf?fileId=5546d4627506bb3201754a6d015075fd
IM535U6DXKMA1
Hersteller: Infineon Technologies
Description: IM535U6DXKMA1
Packaging: Tube
Mounting Type: Through Hole
Type: IGBT
Configuration: 3 Phase
Voltage - Isolation: 2000Vrms
Part Status: Active
Current: 30 A
Voltage: 600 V
auf Bestellung 529 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+29.53 EUR
14+20.24 EUR
112+16.55 EUR
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IRF6612TR1 IRF6612,TR1.pdf
IRF6612TR1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 30V 24A DIRECTFET
Produkt ist nicht verfügbar
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IRF6612TR1 IRF6612,TR1.pdf
IRF6612TR1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 30V 24A DIRECTFET
Produkt ist nicht verfügbar
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IKW15N120CS7XKSA1 Infineon-IKW15N120CS7-DataSheet-v01_00-EN.pdf?fileId=5546d46278d64ffd0178f97db2b905a6
IKW15N120CS7XKSA1
Hersteller: Infineon Technologies
Description: IGBT TRENCH FS 1200V 36A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 135 ns
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 15A
Supplier Device Package: PG-TO247-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 23ns/170ns
Switching Energy: 750µJ (on), 700µJ (off)
Test Condition: 600V, 15A, 10Ohm, 15V
Gate Charge: 95 nC
Part Status: Active
Current - Collector (Ic) (Max): 36 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 45 A
Power - Max: 176 W
auf Bestellung 634 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+7.67 EUR
30+4.3 EUR
120+3.55 EUR
510+3.01 EUR
Mindestbestellmenge: 3
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REFTWILD8150E60V1ATOBO1 Infineon-ILD8150_ILD8150E-DataSheet-v01_04-EN.pdf?fileId=5546d462696dbf120169ba96613f4c20
REFTWILD8150E60V1ATOBO1
Hersteller: Infineon Technologies
Description: EVAL BOARD FOR ILD8150E
Packaging: Bulk
Features: Dimmable
Voltage - Output: 10V ~ 56V
Voltage - Input: 16V ~ 70V
Current - Output / Channel: 1.05A
Utilized IC / Part: ILD8150E
Supplied Contents: Board(s)
Outputs and Type: 2 Non-Isolated Outputs
Part Status: Active
Contents: Board(s)
auf Bestellung 3 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+108.61 EUR
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IAUC80N04S6N036ATMA1 Infineon-IAUC80N04S6N036-DataSheet-v01_00-EN.pdf?fileId=5546d4626afcd350016b1c881e60109f
IAUC80N04S6N036ATMA1
Hersteller: Infineon Technologies
Description: IAUC80N04S6N036ATMA1
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 3.68mOhm @ 40A, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 3V @ 18µA
Supplier Device Package: PG-TDSON-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1338 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5000+0.53 EUR
Mindestbestellmenge: 5000
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IAUC80N04S6N036ATMA1 Infineon-IAUC80N04S6N036-DataSheet-v01_00-EN.pdf?fileId=5546d4626afcd350016b1c881e60109f
IAUC80N04S6N036ATMA1
Hersteller: Infineon Technologies
Description: IAUC80N04S6N036ATMA1
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 3.68mOhm @ 40A, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 3V @ 18µA
Supplier Device Package: PG-TDSON-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1338 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 8759 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
9+1.99 EUR
13+1.36 EUR
100+0.9 EUR
500+0.7 EUR
1000+0.62 EUR
2000+0.59 EUR
Mindestbestellmenge: 9
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IAUC80N04S6L032ATMA1 Infineon-IAUC80N04S6L032-DataSheet-v01_00-EN.pdf?fileId=5546d4626afcd350016b1ca3b4621216
IAUC80N04S6L032ATMA1
Hersteller: Infineon Technologies
Description: IAUC80N04S6L032ATMA1
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 3.29mOhm @ 40A, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 2V @ 18µA
Supplier Device Package: PG-TDSON-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1515 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5000+0.5 EUR
Mindestbestellmenge: 5000
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IAUC80N04S6L032ATMA1 Infineon-IAUC80N04S6L032-DataSheet-v01_00-EN.pdf?fileId=5546d4626afcd350016b1ca3b4621216
IAUC80N04S6L032ATMA1
Hersteller: Infineon Technologies
Description: IAUC80N04S6L032ATMA1
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 3.29mOhm @ 40A, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 2V @ 18µA
Supplier Device Package: PG-TDSON-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1515 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 6244 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
9+2.08 EUR
14+1.31 EUR
100+0.87 EUR
500+0.68 EUR
1000+0.62 EUR
2000+0.58 EUR
Mindestbestellmenge: 9
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T1080N04TOFXPSA1 Infineon-T1080N-DS-v03_01-en_de.pdf?fileId=db3a3043284aacd8012863528c2a5301
T1080N04TOFXPSA1
Hersteller: Infineon Technologies
Description: SCR MODULE 600V 2000A DO-200AB
Packaging: Bulk
Package / Case: DO-200AA, A-PUK
Mounting Type: Clamp On
Operating Temperature: -40°C ~ 140°C
Structure: Single
Current - Hold (Ih) (Max): 200 mA
Current - Gate Trigger (Igt) (Max): 200 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 16000A @ 50Hz
Number of SCRs, Diodes: 1 SCR
Current - On State (It (AV)) (Max): 1078 A
Voltage - Gate Trigger (Vgt) (Max): 2 V
Part Status: Obsolete
Current - On State (It (RMS)) (Max): 2000 A
Voltage - Off State: 600 V
auf Bestellung 6 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+140.25 EUR
Mindestbestellmenge: 4
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IAUS260N10S5N019TATMA1 Infineon-IAUS260N10S5N019T-DataSheet-v01_00-EN.pdf?fileId=5546d4627617cd8301762e04616a61b8
IAUS260N10S5N019TATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 100V 260A HDSOP-16-2
Packaging: Tape & Reel (TR)
Package / Case: 16-PowerSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 260A (Tj)
Rds On (Max) @ Id, Vgs: 1.9mOhm @ 100A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 210µA
Supplier Device Package: PG-HDSOP-16-2
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 166 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11830 pF @ 50 V
Qualification: AEC-Q101
auf Bestellung 1800 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1800+3.89 EUR
Mindestbestellmenge: 1800
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IAUS260N10S5N019TATMA1 Infineon-IAUS260N10S5N019T-DataSheet-v01_00-EN.pdf?fileId=5546d4627617cd8301762e04616a61b8
IAUS260N10S5N019TATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 100V 260A HDSOP-16-2
Packaging: Cut Tape (CT)
Package / Case: 16-PowerSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 260A (Tj)
Rds On (Max) @ Id, Vgs: 1.9mOhm @ 100A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 210µA
Supplier Device Package: PG-HDSOP-16-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 166 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11830 pF @ 50 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 3386 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+9.75 EUR
10+6.56 EUR
100+4.76 EUR
Mindestbestellmenge: 2
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IPD60N10S412ATMA1 fundamentals-of-power-semiconductors
IPD60N10S412ATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 100V 60A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 12.2mOhm @ 60A, 10V
Power Dissipation (Max): 94W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 46µA
Supplier Device Package: PG-TO252-3-313
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2470 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2500+0.93 EUR
Mindestbestellmenge: 2500
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IPD60N10S412ATMA1 fundamentals-of-power-semiconductors
IPD60N10S412ATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 100V 60A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 12.2mOhm @ 60A, 10V
Power Dissipation (Max): 94W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 46µA
Supplier Device Package: PG-TO252-3-313
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2470 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 5704 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
7+2.73 EUR
10+1.85 EUR
100+1.32 EUR
500+1.15 EUR
1000+1.06 EUR
Mindestbestellmenge: 7
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IRGC49B120UB Short_Form_Cat_2016.pdf
Hersteller: Infineon Technologies
Description: IGBT CHIP
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.25V @ 15V, 10A
Supplier Device Package: Die
IGBT Type: NPT
Part Status: Obsolete
Current - Collector (Ic) (Max): 50 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Produkt ist nicht verfügbar
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CY88155PFT-G-110-JN-EFE1 download
CY88155PFT-G-110-JN-EFE1
Hersteller: Infineon Technologies
Description: IC FANOUT BUFFER 8TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Output: CMOS
Frequency - Max: 25MHz
Type: Fanout Buffer (Distribution), Spread Spectrum Clock Generator
Input: Crystal
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3V ~ 3.6V
Ratio - Input:Output: 1:2
Differential - Input:Output: No/No
Supplier Device Package: 8-TSSOP
PLL: Yes with Bypass
Divider/Multiplier: No/Yes
Part Status: Obsolete
Number of Circuits: 1
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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CY88155PFT-G-110-JN-ERE1 download
CY88155PFT-G-110-JN-ERE1
Hersteller: Infineon Technologies
Description: IC FANOUT BUFFER 8TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Output: CMOS
Frequency - Max: 25MHz
Type: Fanout Buffer (Distribution), Spread Spectrum Clock Generator
Input: Crystal
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3V ~ 3.6V
Ratio - Input:Output: 1:2
Differential - Input:Output: No/No
Supplier Device Package: 8-TSSOP
PLL: Yes with Bypass
Divider/Multiplier: No/Yes
Part Status: Obsolete
Number of Circuits: 1
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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MB95F118ASPMT-G-110SPE1
Hersteller: Infineon Technologies
Description: IC MCU
Packaging: Bulk
Part Status: Obsolete
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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PX8746JDNG029XTMA1
Hersteller: Infineon Technologies
Description: LED PX8746JDNG029XTMA1
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPP019N08NF2SAKMA1 Infineon-IPP019N08NF2S-DataSheet-v02_00-EN.pdf?fileId=5546d46276c4f5350176f7027bd71695
IPP019N08NF2SAKMA1
Hersteller: Infineon Technologies
Description: TRENCH 40<-<100V
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 32A (Ta), 191A (Tc)
Rds On (Max) @ Id, Vgs: 1.9mOhm @ 100A, 10V
Power Dissipation (Max): 3.8W (Ta), 250W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 194µA
Supplier Device Package: PG-TO220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 186 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8700 pF @ 40 V
auf Bestellung 1494 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+5.58 EUR
50+2.83 EUR
100+2.56 EUR
500+2.09 EUR
1000+1.94 EUR
Mindestbestellmenge: 4
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