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FS400R07A1E3BOMA1 FS400R07A1E3BOMA1 Infineon Technologies Infineon-FS400R07A1E3-DS-v03_03-EN.pdf?fileId=db3a304325afd6e001261d0930996007 Description: IGBT MOD 650V 500A AG-HYBRID1-1
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 400A
NTC Thermistor: Yes
Supplier Device Package: AG-HYBRID1-1
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 500 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Power - Max: 1250 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 26 nF @ 25 V
Produkt ist nicht verfügbar
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BAR8602ELSE6327XTSA1 Infineon Technologies Description: RF PIN DIODE > ANTENNA SWITCH
Packaging: Bulk
Part Status: Active
auf Bestellung 105000 Stücke:
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3463+0.15 EUR
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BAT6404E6433HTMA1 BAT6404E6433HTMA1 Infineon Technologies INFNS11551-1.pdf?t.download=true&u=5oefqw Description: DIODE ARR SCHOTT 40V 250MA SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 5 ns
Technology: Schottky
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 250mA
Supplier Device Package: PG-SOT23
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 100 mA
Current - Reverse Leakage @ Vr: 2 µA @ 30 V
Grade: Automotive
Qualification: AEC-Q101
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10000+0.058 EUR
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BAS4004E6433HTMA1 BAS4004E6433HTMA1 Infineon Technologies INFNS19700-1.pdf?t.download=true&u=5oefqw Description: DIODE ARR SCHOTT 40V 120MA SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 100 ps
Technology: Schottky
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 120mA (DC)
Supplier Device Package: PG-SOT23
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 40 mA
Current - Reverse Leakage @ Vr: 1 µA @ 30 V
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CY7C1360C-166BZC CY7C1360C-166BZC Infineon Technologies download Description: IC SRAM 9MBIT PARALLEL 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 9Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 3.135V ~ 3.6V
Technology: SRAM - Synchronous, SDR
Clock Frequency: 166 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (13x15)
Memory Interface: Parallel
Access Time: 3.5 ns
Memory Organization: 256K x 36
DigiKey Programmable: Not Verified
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IRLR3636TRLPBF IRLR3636TRLPBF Infineon Technologies IRSDS10828-1.pdf?t.download=true&u=5oefqw Description: MOSFET N-CH 60V 50A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 6.8mOhm @ 50A, 10V
Power Dissipation (Max): 143W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 100µA
Supplier Device Package: TO-252AA (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 3779 pF @ 50 V
Produkt ist nicht verfügbar
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IRFR5410TRLPBF IRFR5410TRLPBF Infineon Technologies irfr5410pbf.pdf?fileId=5546d462533600a4015356356f622107 Description: MOSFET P-CH 100V 13A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
Rds On (Max) @ Id, Vgs: 205mOhm @ 7.8A, 10V
Power Dissipation (Max): 66W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 760 pF @ 25 V
Produkt ist nicht verfügbar
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BCR 149T E6327 BCR 149T E6327 Infineon Technologies BCR149.pdf Description: TRANS PREBIAS NPN 50V 0.07A SC75
Packaging: Tape & Reel (TR)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 5mA, 5V
Supplier Device Package: PG-SC75-3D
Current - Collector (Ic) (Max): 70 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 250 mW
Frequency - Transition: 150 MHz
Resistor - Base (R1): 47 kOhms
Resistors Included: R1 Only
Produkt ist nicht verfügbar
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AUIRF7316QTR AUIRF7316QTR Infineon Technologies INFN-S-A0002298726-1.pdf?t.download=true&u=5oefqw Description: MOSFET 2P-CH 30V 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W
Drain to Source Voltage (Vdss): 30V
Input Capacitance (Ciss) (Max) @ Vds: 710pF @ 25V
Rds On (Max) @ Id, Vgs: 58mOhm @ 4.9A, 10V
Gate Charge (Qg) (Max) @ Vgs: 34nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Not For New Designs
Produkt ist nicht verfügbar
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AUIRF7316QTR AUIRF7316QTR Infineon Technologies INFN-S-A0002298726-1.pdf?t.download=true&u=5oefqw Description: MOSFET 2P-CH 30V 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W
Drain to Source Voltage (Vdss): 30V
Input Capacitance (Ciss) (Max) @ Vds: 710pF @ 25V
Rds On (Max) @ Id, Vgs: 58mOhm @ 4.9A, 10V
Gate Charge (Qg) (Max) @ Vgs: 34nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Not For New Designs
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CY7C199CN-15ZXC CY7C199CN-15ZXC Infineon Technologies CY7C199CN.pdf Description: IC SRAM 256KBIT PAR 28TSOP I
Packaging: Tray
Package / Case: 28-TSSOP (0.465", 11.80mm Width)
Mounting Type: Surface Mount
Memory Size: 256Kbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 28-TSOP I
Part Status: Obsolete
Write Cycle Time - Word, Page: 15ns
Memory Interface: Parallel
Access Time: 15 ns
Memory Organization: 32K x 8
DigiKey Programmable: Not Verified
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437+1.12 EUR
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CY7C199-15ZC CY7C199-15ZC Infineon Technologies CY7C199.pdf Description: IC SRAM 256KBIT 15NS 28TSOP
Packaging: Bag
Package / Case: 28-TSSOP (0.465", 11.80mm Width)
Mounting Type: Surface Mount
Memory Size: 256Kbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 28-TSOP I
Part Status: Obsolete
Write Cycle Time - Word, Page: 15ns
Memory Interface: Parallel
Access Time: 15 ns
Memory Organization: 32K x 8
DigiKey Programmable: Not Verified
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CY7C199CL-15ZXC CY7C199CL-15ZXC Infineon Technologies CY7C199C%20RevB.pdf Description: IC SRAM 256KBIT PAR 28TSOP I
Packaging: Bag
Package / Case: 28-TSSOP (0.465", 11.80mm Width)
Mounting Type: Surface Mount
Memory Size: 256Kbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 28-TSOP I
Part Status: Obsolete
Write Cycle Time - Word, Page: 15ns
Memory Interface: Parallel
Access Time: 15 ns
Memory Organization: 32K x 8
DigiKey Programmable: Not Verified
auf Bestellung 676 Stücke:
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360+1.35 EUR
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IPA030N10NF2SXKSA1 IPA030N10NF2SXKSA1 Infineon Technologies Infineon-IPA030N10NF2S-DataSheet-v02_00-EN.pdf?fileId=5546d46278d64ffd0179176bf1c41165 Description: TRENCH >=100V PG-TO220-3
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 83A (Tc)
Rds On (Max) @ Id, Vgs: 3mOhm @ 50A, 10V
Power Dissipation (Max): 41W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 169µA
Supplier Device Package: PG-TO220 Full Pack
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 154 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7300 pF @ 50 V
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3+6.64 EUR
50+3.42 EUR
100+3.11 EUR
Mindestbestellmenge: 3
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IAUZ40N08S5N100ATMA1 IAUZ40N08S5N100ATMA1 Infineon Technologies Infineon-IAUZ40N08S5N100-DataSheet-v01_00-EN.pdf?fileId=5546d4626f1cf1c5016f1e6c94a801de Description: MOSFET N-CH 75V 80A 8TSDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 20A, 10V
Power Dissipation (Max): 68W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 27µA
Supplier Device Package: PG-TDSON-8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 24.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1591 pF @ 40 V
Qualification: AEC-Q101
auf Bestellung 5000 Stücke:
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5000+0.64 EUR
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IKB15N60TATMA1 IKB15N60TATMA1 Infineon Technologies Infineon-IKB15N60T-DS-v02_08-EN.pdf?fileId=db3a304412b407950112b4287d223e0a Description: IGBT TRENCH FS 600V 30A TO263-3
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 34 ns
Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 15A
Supplier Device Package: PG-TO263-3-2
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 17ns/188ns
Switching Energy: 570µJ
Test Condition: 400V, 15A, 15Ohm, 15V
Gate Charge: 87 nC
Part Status: Active
Current - Collector (Ic) (Max): 30 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 45 A
Power - Max: 130 W
auf Bestellung 1000 Stücke:
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1000+1.21 EUR
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TLE88812TNAKSA1 TLE88812TNAKSA1 Infineon Technologies Infineon-TLE8881-2-DataSheet-v01_00-EN.pdf?fileId=5546d4626cb27db2016d5d74fb3a0492 Description: ALTERNATOR_IC
Packaging: Tube
Package / Case: TO-220-5
Voltage - Output: 12V
Mounting Type: Through Hole
Number of Outputs: 1
Voltage - Input: 6V ~ 18V
Operating Temperature: -40°C ~ 175°C (TJ)
Supplier Device Package: PG-TO220-5-12
Part Status: Active
Grade: Automotive
Qualification: AEC-Q100
auf Bestellung 398 Stücke:
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1+20.26 EUR
10+18.62 EUR
25+17.84 EUR
100+15.72 EUR
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1EDU20I12SVXUMA1 1EDU20I12SVXUMA1 Infineon Technologies Infineon-1EDS20I12SV-DS-v01_00-EN.pdf?fileId=5546d46145f1f3a40145faf0aa200fc1 Description: DIGITAL ISO 5KV 1CH GATE DVR
Packaging: Tape & Reel (TR)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Technology: Magnetic Coupling
Voltage - Isolation: 5000Vrms
Part Status: Active
Number of Channels: 1
Produkt ist nicht verfügbar
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1EDU20I12SVXUMA1 1EDU20I12SVXUMA1 Infineon Technologies Infineon-1EDS20I12SV-DS-v01_00-EN.pdf?fileId=5546d46145f1f3a40145faf0aa200fc1 Description: DIGITAL ISO 5KV 1CH GATE DVR
Packaging: Cut Tape (CT)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Technology: Magnetic Coupling
Voltage - Isolation: 5000Vrms
Part Status: Active
Number of Channels: 1
Produkt ist nicht verfügbar
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F4100R12KS4BOSA1 F4100R12KS4BOSA1 Infineon Technologies Infineon-F4_100R12KS4-DS-v02_01-en_de.pdf?fileId=db3a304412b407950112b4327b185851 Description: IGBT MOD 1200V 130A 660W
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 125°C
Vce(on) (Max) @ Vge, Ic: 3.75V @ 15V, 100A
NTC Thermistor: Yes
Supplier Device Package: Module
Part Status: Active
Current - Collector (Ic) (Max): 130 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 660 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 6.8 nF @ 25 V
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1+192.81 EUR
10+167.38 EUR
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SLB9665TT20FW561XUMA1 Infineon Technologies Description: OPTIGA EMBEDDED SECURITY TRUSTED
auf Bestellung 3000 Stücke:
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SLB9665VQ20FW560XUMA2 SLB9665VQ20FW560XUMA2 Infineon Technologies SLB9665xx2.0.pdf Description: SECURITY IC'S/AUTHENTICATION IC'
Packaging: Tape & Reel (TR)
Package / Case: 32-VFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: LPC
Operating Temperature: -20°C ~ 85°C (TA)
Voltage - Supply: 3V ~ 3.6V
Program Memory Type: NVM (7.04kB)
Applications: Trusted Platform Module (TPM)
Core Processor: 16-Bit
Supplier Device Package: PG-VQFN-32-13
Part Status: Not For New Designs
Number of I/O: 1
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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IPD50N06S2L13ATMA2 IPD50N06S2L13ATMA2 Infineon Technologies Infineon-IPD50N06S2L_13-DS-v01_00-en.pdf?fileId=db3a304412b407950112b433e8e55e1a Description: MOSFET N-CH 55V 50A TO252-31
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 12.7mOhm @ 34A, 10V
Power Dissipation (Max): 136W (Tc)
Vgs(th) (Max) @ Id: 2V @ 80µA
Supplier Device Package: PG-TO252-3-11
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 69 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 2500 Stücke:
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2500+0.95 EUR
Mindestbestellmenge: 2500
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IPB110P06LMATMA1 IPB110P06LMATMA1 Infineon Technologies Infineon-IPB110P06LM-DS-v02_00-EN.pdf?fileId=5546d46269e1c019016a03e2d06000ae Description: MOSFET P-CH 60V 100A TO263-3
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 11mOhm @ 100A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 2V @ 5.55mA
Supplier Device Package: PG-TO263-3-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 281 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8500 pF @ 30 V
auf Bestellung 2000 Stücke:
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1000+2.41 EUR
2000+2.36 EUR
Mindestbestellmenge: 1000
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IPB110P06LMATMA1 IPB110P06LMATMA1 Infineon Technologies Infineon-IPB110P06LM-DS-v02_00-EN.pdf?fileId=5546d46269e1c019016a03e2d06000ae Description: MOSFET P-CH 60V 100A TO263-3
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 11mOhm @ 100A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 2V @ 5.55mA
Supplier Device Package: PG-TO263-3-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 281 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8500 pF @ 30 V
auf Bestellung 2170 Stücke:
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3+6.74 EUR
10+4.44 EUR
100+3.14 EUR
500+2.89 EUR
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AUIRFR9024NTRL AUIRFR9024NTRL Infineon Technologies INFN-S-A0002298863-1.pdf?t.download=true&u=5oefqw Description: MOSFET P-CH 55V 11A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 175mOhm @ 6.6A, 10V
Power Dissipation (Max): 38W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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CY8CMBR3150-LQXIT Infineon Technologies Description: CAPSENSE EXPRESS
Packaging: Tape & Reel (TR)
Part Status: Obsolete
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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BSZ042N04NS Infineon Technologies Description: N-CHANNEL POWER MOSFET
Produkt ist nicht verfügbar
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BC847BE6433 BC847BE6433 Infineon Technologies INFNS14907-1.pdf?t.download=true&u=5oefqw Description: TRANS NPN 45V 0.1A SOT23
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
Frequency - Transition: 250MHz
Supplier Device Package: PG-SOT23
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 330 mW
auf Bestellung 34790 Stücke:
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8689+0.048 EUR
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TLS850F2TAV50ATMA1 TLS850F2TAV50ATMA1 Infineon Technologies Infineon-TLS850F2TA%20V50-DataSheet-v01_00-EN.pdf?fileId=5546d46266a498f50166e8fa53582ac5 Description: IC REG LIN 5V 500MA PG-TO263-7-1
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 500mA
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 80 µA
Voltage - Input (Max): 40V
Number of Regulators: 1
Supplier Device Package: PG-TO263-7-1
Voltage - Output (Min/Fixed): 5V
Control Features: Enable, Power Fail
Part Status: Active
PSRR: 59dB (100Hz)
Voltage Dropout (Max): 0.175V @ 250mA
Protection Features: Over Current, Over Temperature
Current - Supply (Max): 82 µA
Grade: Automotive
Qualification: AEC-Q100
Produkt ist nicht verfügbar
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IPI65R310CFDXKSA1700 IPI65R310CFDXKSA1700 Infineon Technologies Infineon-IPX65R310CFD-DS-v02_03-en[1].pdf?fileId=db3a30432f91014f012f9caff105741c Description: IPI65R310 - 650V AND 700V COOLMO
auf Bestellung 1500 Stücke:
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336+1.58 EUR
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IPI120N04S302AKSA1 IPI120N04S302AKSA1 Infineon Technologies Infineon-IPP_B_I120N04S3_02-DS-v01_00-en.pdf?folderId=db3a304412b407950112b42b75b74520&fileId=db3a304412b407950112b42ba1cd4583&ack=t Description: MOSFET N-CH 40V 120A TO262-3
Packaging: Bulk
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 2.3mOhm @ 80A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 230µA
Supplier Device Package: PG-TO262-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 210 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 14300 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
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IPP120N04S3-02 IPP120N04S3-02 Infineon Technologies INFNS10669-1.pdf?t.download=true&u=5oefqw Description: PFET, 120A I(D), 40V, 0.0023OHM,
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 2.3mOhm @ 80A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 230µA
Supplier Device Package: PG-TO220-3-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 210 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 14300 pF @ 25 V
auf Bestellung 30607 Stücke:
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94+5.33 EUR
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IPP60R360P7 IPP60R360P7 Infineon Technologies Infineon-IPP60R360P7-DS-v02_02-EN.pdf?fileId=5546d46259d9a4bf015a5be590fa3cc2 Description: POWER FIELD-EFFECT TRANSISTOR, 6
Packaging: Bulk
Part Status: Active
Produkt ist nicht verfügbar
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IPL60R385CPAUMA1 IPL60R385CPAUMA1 Infineon Technologies IPL60R385CP_2_0.pdf?folderId=db3a3043163797a6011637d4bae7003b&fileId=db3a3043284aacd801285d06e55327e3 Description: MOSFET N-CH 600V 9A 4VSON
Packaging: Bulk
Package / Case: 4-PowerTSFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 385mOhm @ 5.2A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 340µA
Supplier Device Package: PG-VSON-4
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 790 pF @ 100 V
auf Bestellung 52754 Stücke:
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290+1.75 EUR
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IDK10G65C5XTMA2 IDK10G65C5XTMA2 Infineon Technologies Infineon-IDK10G65C5-DS-v02_00-en.pdf?fileId=db3a304342e8be2c0142fbfb87cd4ed3 Description: DIODE SIL CARB 650V 10A PGTO2632
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 300pF @ 1V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: PG-TO263-2
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 10 A
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1000+2.36 EUR
2000+2.31 EUR
Mindestbestellmenge: 1000
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BB844E6327HTSA1 BB844E6327HTSA1 Infineon Technologies INFNS15711-1.pdf?t.download=true&u=5oefqw Description: DIODE VARACTOR 18V DUAL SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Diode Type: 1 Pair Common Cathode
Operating Temperature: -55°C ~ 150°C (TJ)
Capacitance @ Vr, F: 13pF @ 8V, 1MHz
Capacitance Ratio Condition: C2/C8
Supplier Device Package: PG-SOT23
Part Status: Active
Voltage - Peak Reverse (Max): 18 V
Capacitance Ratio: 3.8
auf Bestellung 14779 Stücke:
Lieferzeit 10-14 Tag (e)
20+0.9 EUR
33+0.55 EUR
100+0.35 EUR
500+0.26 EUR
1000+0.24 EUR
Mindestbestellmenge: 20
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TLE4976LHALA1 TLE4976LHALA1 Infineon Technologies TLE4976x+Data+Sheet+V1_1.pdf?folderId=db3a30431689f4420116a096e1db033e&fileId=db3a304319c6f18c0119cd9980a57ae7 Description: MAGNETIC SWITCH UNIPOLAR SSO-3-2
Packaging: Bulk
Features: Temperature Compensated
Package / Case: 3-SSIP, SSO-3-02
Output Type: Open Collector
Polarization: South Pole
Mounting Type: Through Hole
Function: Unipolar Switch
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 3V ~ 18V
Technology: Hall Effect
Sensing Range: 11mT Trip, 5mT Release
Current - Supply (Max): 17mA
Supplier Device Package: PG-SSO-3-2
Test Condition: -40°C ~ 150°C
Grade: Automotive
Qualification: AEC-Q100
auf Bestellung 188000 Stücke:
Lieferzeit 10-14 Tag (e)
491+0.93 EUR
Mindestbestellmenge: 491
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TLE4939 Infineon Technologies Infineon-TLE493D-A1B6-DS-v01_00-EN.pdf?fileId=5546d462602a9dc801606f142b5c7fe5 Description: MAGNETIC SPEED SENSORS
Packaging: Bulk
Part Status: Active
auf Bestellung 26000 Stücke:
Lieferzeit 10-14 Tag (e)
670+0.76 EUR
Mindestbestellmenge: 670
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TLE4941-HT TLE4941-HT Infineon Technologies TLE4941%2CC%20Prod.%20Brief.pdf Description: MAG SWITCH SPEC PURP SSO-2-2
Packaging: Bulk
Package / Case: 2-SIP, SSO-2-2
Output Type: Current Source
Mounting Type: Through Hole
Function: Special Purpose
Voltage - Supply: 4.5V ~ 20V
Technology: Hall Effect
Current - Supply (Max): 16.8mA
Supplier Device Package: PG-SSO-2-2
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183+2.76 EUR
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TLE4941-1-HT TLE4941-1-HT Infineon Technologies TLE4941%2CC%20Prod.%20Brief.pdf Description: MAG SWITCH SPEC PURP SSO-2-2
Packaging: Bulk
Package / Case: 2-SIP, SSO-2-2
Output Type: Current Source
Mounting Type: Through Hole
Function: Special Purpose
Voltage - Supply: 4.5V ~ 20V
Technology: Hall Effect
Current - Supply (Max): 16.8mA
Supplier Device Package: PG-SSO-2-2
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Lieferzeit 10-14 Tag (e)
171+2.97 EUR
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TLE4957CE6247HAMA1 Infineon Technologies Part_Number_Guide_Web.pdf Description: MAGNETIC SWITCH HALL EFF SSO-3
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176+3.14 EUR
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TLE4957C2E6847HAMA1 Infineon Technologies fundamentals-of-power-semiconductors Description: MAGNETIC SWITCH HALL EFF SSO-3
Packaging: Bulk
Grade: Automotive
Qualification: AEC-Q100
auf Bestellung 7500 Stücke:
Lieferzeit 10-14 Tag (e)
163+3.04 EUR
Mindestbestellmenge: 163
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TLE4957C-NE6747 TLE4957C-NE6747 Infineon Technologies Description: MAGNETIC SWITCH HALL EFFECT SENS
auf Bestellung 3000 Stücke:
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176+3.14 EUR
Mindestbestellmenge: 176
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TLE4957CB2E6747XTMA1 Infineon Technologies TLE4957Cx-2%20E6747.pdf Description: MAGNETIC SWITCH HALL EFF SSOM-3
Packaging: Bulk
Part Status: Obsolete
Grade: Automotive
Qualification: AEC-Q100
auf Bestellung 1500 Stücke:
Lieferzeit 10-14 Tag (e)
163+3.12 EUR
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TLE4957C-2 E6247 TLE4957C-2 E6247 Infineon Technologies Description: MAGNETIC SWITCH HALL EFFECT SENS
auf Bestellung 2780 Stücke:
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173+3.19 EUR
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TLE4941 Infineon Technologies Infineon-TLE4941C-DS-v03_00-en.pdf?fileId=db3a30433899edae0138c3cd41cd0334 Description: MAGNETIC SWITCH HALL EFFECT SENS
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145+3.59 EUR
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TLE4957CNE6747HAMA1 Infineon Technologies fundamentals-of-power-semiconductors Description: MAGNETIC SWITCH HALL EFF SSO-3
Packaging: Bulk
Part Status: Obsolete
Grade: Automotive
Qualification: AEC-Q100
auf Bestellung 61876 Stücke:
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TLE4954CBXTMA1 Infineon Technologies INFNS30567-1.pdf?t.download=true&u=5oefqw Description: MAGNETIC SWITCH SPECIAL PURPOSE
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TLE4957CE6747HAMA1 Infineon Technologies TLE4957C_PB_26092013.pdf?fileId=db3a3043414fd3ef014159b1f5a06bf1 Description: MAGNETIC SWITCH HALL EFF SSO-3
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152+3.65 EUR
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TLE4954CBE2XTMA1 Infineon Technologies Part_Number_Guide_Web.pdf Description: IC HALL EFFECT SENSOR SSOM-2
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135+4.09 EUR
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TLE4983CSF47NHAMA1 Infineon Technologies Description: IC SPEED SENSOR MAGN PG-SSO-3
Packaging: Bulk
Grade: Automotive
Qualification: AEC-Q100
auf Bestellung 26940 Stücke:
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TLE4983CHTE8547 TLE4983CHTE8547 Infineon Technologies Description: MAG SWITCH SPEED SENSOR 3SSO
auf Bestellung 4000 Stücke:
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94+5.43 EUR
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FF900R12ME7PB11BPSA1 FF900R12ME7PB11BPSA1 Infineon Technologies Infineon-FF900R12ME7P_B11-DataSheet-v02_00-EN.pdf?fileId=5546d46273a5366f0173b496936b4156 Description: MEDIUM POWER ECONO
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge
Operating Temperature: -40°C ~ 175°C
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 900A
NTC Thermistor: No
Supplier Device Package: AG-ECONOD
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 900 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Cutoff (Max): 100 µA
Input Capacitance (Cies) @ Vce: 122 nF @ 25 V
auf Bestellung 12 Stücke:
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1+345.01 EUR
12+324.18 EUR
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AUIRFR6215TRL AUIRFR6215TRL Infineon Technologies IRSDS11569-1.pdf?t.download=true&u=5oefqw Description: MOSFET P-CH 150V 13A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
Rds On (Max) @ Id, Vgs: 295mOhm @ 6.6A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 66 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 860 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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BAS4007WH6327XTSA1 BAS4007WH6327XTSA1 Infineon Technologies INFNS19700-1.pdf?t.download=true&u=5oefqw Description: DIODE ARR SCHOTT 40V SOT343-4-3
Packaging: Tape & Reel (TR)
Package / Case: SC-82A, SOT-343
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 100 ps
Technology: Schottky
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 120mA (DC)
Supplier Device Package: PG-SOT343-4-3
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 40 mA
Current - Reverse Leakage @ Vr: 1 µA @ 30 V
auf Bestellung 11992 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.12 EUR
6000+0.11 EUR
9000+0.1 EUR
Mindestbestellmenge: 3000
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IR3567AMMS02TRP IR3567AMMS02TRP Infineon Technologies IR3567A_PB_v3.04_10-1-13.pdf Description: IC REG BUCK 56VQFN
Packaging: Tape & Reel (TR)
Package / Case: 56-VFQFN Exposed Pad
Output Type: PWM
Mounting Type: Surface Mount
Function: Step-Down
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Positive
Frequency - Switching: 200kHz ~ 2MHz
Topology: Buck
Voltage - Supply (Vcc/Vdd): 3.3V
Supplier Device Package: PG-VQFN-56-900
Synchronous Rectifier: No
Control Features: Enable, Power Good
Serial Interfaces: I²C, PMBus, SMBus
Output Phases: 6
Clock Sync: No
Part Status: Obsolete
Number of Outputs: 8
Produkt ist nicht verfügbar
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BAS4006WH6327XTSA1 BAS4006WH6327XTSA1 Infineon Technologies INFNS19700-1.pdf?t.download=true&u=5oefqw Description: DIODE ARR SCHOT 40V 120MA SOT323
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 100 ps
Technology: Schottky
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 120mA (DC)
Supplier Device Package: PG-SOT323
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 40 mA
Current - Reverse Leakage @ Vr: 1 µA @ 30 V
Produkt ist nicht verfügbar
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BSS169IXTSA1 BSS169IXTSA1 Infineon Technologies Infineon-BSS169I-DataSheet-v02_01-EN.pdf?fileId=5546d46277921c320177a42ad9911d52 Description: MOSFET N-CH 100V 190MA SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel, Depletion Mode
Current - Continuous Drain (Id) @ 25°C: 190mA (Ta)
Rds On (Max) @ Id, Vgs: 2.9Ohm @ 190mA, 10V
Power Dissipation (Max): 360mW (Ta)
Vgs(th) (Max) @ Id: 1.8V @ 50µA
Supplier Device Package: PG-SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 0V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 2.1 nC @ 7 V
Input Capacitance (Ciss) (Max) @ Vds: 51 pF @ 25 V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.11 EUR
Mindestbestellmenge: 3000
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BSS169IXTSA1 BSS169IXTSA1 Infineon Technologies Infineon-BSS169I-DataSheet-v02_01-EN.pdf?fileId=5546d46277921c320177a42ad9911d52 Description: MOSFET N-CH 100V 190MA SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel, Depletion Mode
Current - Continuous Drain (Id) @ 25°C: 190mA (Ta)
Rds On (Max) @ Id, Vgs: 2.9Ohm @ 190mA, 10V
Power Dissipation (Max): 360mW (Ta)
Vgs(th) (Max) @ Id: 1.8V @ 50µA
Supplier Device Package: PG-SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 0V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 2.1 nC @ 7 V
Input Capacitance (Ciss) (Max) @ Vds: 51 pF @ 25 V
auf Bestellung 4734 Stücke:
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31+0.58 EUR
49+0.36 EUR
102+0.17 EUR
1000+0.15 EUR
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FS400R07A1E3BOMA1 Infineon-FS400R07A1E3-DS-v03_03-EN.pdf?fileId=db3a304325afd6e001261d0930996007
FS400R07A1E3BOMA1
Hersteller: Infineon Technologies
Description: IGBT MOD 650V 500A AG-HYBRID1-1
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 400A
NTC Thermistor: Yes
Supplier Device Package: AG-HYBRID1-1
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 500 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Power - Max: 1250 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 26 nF @ 25 V
Produkt ist nicht verfügbar
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BAR8602ELSE6327XTSA1
Hersteller: Infineon Technologies
Description: RF PIN DIODE > ANTENNA SWITCH
Packaging: Bulk
Part Status: Active
auf Bestellung 105000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3463+0.15 EUR
Mindestbestellmenge: 3463
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BAT6404E6433HTMA1 INFNS11551-1.pdf?t.download=true&u=5oefqw
BAT6404E6433HTMA1
Hersteller: Infineon Technologies
Description: DIODE ARR SCHOTT 40V 250MA SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 5 ns
Technology: Schottky
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 250mA
Supplier Device Package: PG-SOT23
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 100 mA
Current - Reverse Leakage @ Vr: 2 µA @ 30 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 20000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
10000+0.058 EUR
Mindestbestellmenge: 10000
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BAS4004E6433HTMA1 INFNS19700-1.pdf?t.download=true&u=5oefqw
BAS4004E6433HTMA1
Hersteller: Infineon Technologies
Description: DIODE ARR SCHOTT 40V 120MA SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 100 ps
Technology: Schottky
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 120mA (DC)
Supplier Device Package: PG-SOT23
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 40 mA
Current - Reverse Leakage @ Vr: 1 µA @ 30 V
Produkt ist nicht verfügbar
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CY7C1360C-166BZC download
CY7C1360C-166BZC
Hersteller: Infineon Technologies
Description: IC SRAM 9MBIT PARALLEL 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 9Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 3.135V ~ 3.6V
Technology: SRAM - Synchronous, SDR
Clock Frequency: 166 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (13x15)
Memory Interface: Parallel
Access Time: 3.5 ns
Memory Organization: 256K x 36
DigiKey Programmable: Not Verified
auf Bestellung 287 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+6.83 EUR
Mindestbestellmenge: 3
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IRLR3636TRLPBF IRSDS10828-1.pdf?t.download=true&u=5oefqw
IRLR3636TRLPBF
Hersteller: Infineon Technologies
Description: MOSFET N-CH 60V 50A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 6.8mOhm @ 50A, 10V
Power Dissipation (Max): 143W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 100µA
Supplier Device Package: TO-252AA (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 3779 pF @ 50 V
Produkt ist nicht verfügbar
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IRFR5410TRLPBF irfr5410pbf.pdf?fileId=5546d462533600a4015356356f622107
IRFR5410TRLPBF
Hersteller: Infineon Technologies
Description: MOSFET P-CH 100V 13A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
Rds On (Max) @ Id, Vgs: 205mOhm @ 7.8A, 10V
Power Dissipation (Max): 66W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 760 pF @ 25 V
Produkt ist nicht verfügbar
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BCR 149T E6327 BCR149.pdf
BCR 149T E6327
Hersteller: Infineon Technologies
Description: TRANS PREBIAS NPN 50V 0.07A SC75
Packaging: Tape & Reel (TR)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 5mA, 5V
Supplier Device Package: PG-SC75-3D
Current - Collector (Ic) (Max): 70 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 250 mW
Frequency - Transition: 150 MHz
Resistor - Base (R1): 47 kOhms
Resistors Included: R1 Only
Produkt ist nicht verfügbar
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AUIRF7316QTR INFN-S-A0002298726-1.pdf?t.download=true&u=5oefqw
AUIRF7316QTR
Hersteller: Infineon Technologies
Description: MOSFET 2P-CH 30V 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W
Drain to Source Voltage (Vdss): 30V
Input Capacitance (Ciss) (Max) @ Vds: 710pF @ 25V
Rds On (Max) @ Id, Vgs: 58mOhm @ 4.9A, 10V
Gate Charge (Qg) (Max) @ Vgs: 34nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Not For New Designs
Produkt ist nicht verfügbar
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AUIRF7316QTR INFN-S-A0002298726-1.pdf?t.download=true&u=5oefqw
AUIRF7316QTR
Hersteller: Infineon Technologies
Description: MOSFET 2P-CH 30V 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W
Drain to Source Voltage (Vdss): 30V
Input Capacitance (Ciss) (Max) @ Vds: 710pF @ 25V
Rds On (Max) @ Id, Vgs: 58mOhm @ 4.9A, 10V
Gate Charge (Qg) (Max) @ Vgs: 34nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Not For New Designs
auf Bestellung 2 Stücke:
Lieferzeit 10-14 Tag (e)
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CY7C199CN-15ZXC CY7C199CN.pdf
CY7C199CN-15ZXC
Hersteller: Infineon Technologies
Description: IC SRAM 256KBIT PAR 28TSOP I
Packaging: Tray
Package / Case: 28-TSSOP (0.465", 11.80mm Width)
Mounting Type: Surface Mount
Memory Size: 256Kbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 28-TSOP I
Part Status: Obsolete
Write Cycle Time - Word, Page: 15ns
Memory Interface: Parallel
Access Time: 15 ns
Memory Organization: 32K x 8
DigiKey Programmable: Not Verified
auf Bestellung 3122 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
437+1.12 EUR
Mindestbestellmenge: 437
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CY7C199-15ZC CY7C199.pdf
CY7C199-15ZC
Hersteller: Infineon Technologies
Description: IC SRAM 256KBIT 15NS 28TSOP
Packaging: Bag
Package / Case: 28-TSSOP (0.465", 11.80mm Width)
Mounting Type: Surface Mount
Memory Size: 256Kbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 28-TSOP I
Part Status: Obsolete
Write Cycle Time - Word, Page: 15ns
Memory Interface: Parallel
Access Time: 15 ns
Memory Organization: 32K x 8
DigiKey Programmable: Not Verified
auf Bestellung 2958 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
249+1.97 EUR
Mindestbestellmenge: 249
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CY7C199CL-15ZXC CY7C199C%20RevB.pdf
CY7C199CL-15ZXC
Hersteller: Infineon Technologies
Description: IC SRAM 256KBIT PAR 28TSOP I
Packaging: Bag
Package / Case: 28-TSSOP (0.465", 11.80mm Width)
Mounting Type: Surface Mount
Memory Size: 256Kbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 28-TSOP I
Part Status: Obsolete
Write Cycle Time - Word, Page: 15ns
Memory Interface: Parallel
Access Time: 15 ns
Memory Organization: 32K x 8
DigiKey Programmable: Not Verified
auf Bestellung 676 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
360+1.35 EUR
Mindestbestellmenge: 360
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IPA030N10NF2SXKSA1 Infineon-IPA030N10NF2S-DataSheet-v02_00-EN.pdf?fileId=5546d46278d64ffd0179176bf1c41165
IPA030N10NF2SXKSA1
Hersteller: Infineon Technologies
Description: TRENCH >=100V PG-TO220-3
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 83A (Tc)
Rds On (Max) @ Id, Vgs: 3mOhm @ 50A, 10V
Power Dissipation (Max): 41W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 169µA
Supplier Device Package: PG-TO220 Full Pack
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 154 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7300 pF @ 50 V
auf Bestellung 450 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+6.64 EUR
50+3.42 EUR
100+3.11 EUR
Mindestbestellmenge: 3
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IAUZ40N08S5N100ATMA1 Infineon-IAUZ40N08S5N100-DataSheet-v01_00-EN.pdf?fileId=5546d4626f1cf1c5016f1e6c94a801de
IAUZ40N08S5N100ATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 75V 80A 8TSDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 20A, 10V
Power Dissipation (Max): 68W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 27µA
Supplier Device Package: PG-TDSON-8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 24.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1591 pF @ 40 V
Qualification: AEC-Q101
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5000+0.64 EUR
Mindestbestellmenge: 5000
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IKB15N60TATMA1 Infineon-IKB15N60T-DS-v02_08-EN.pdf?fileId=db3a304412b407950112b4287d223e0a
IKB15N60TATMA1
Hersteller: Infineon Technologies
Description: IGBT TRENCH FS 600V 30A TO263-3
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 34 ns
Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 15A
Supplier Device Package: PG-TO263-3-2
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 17ns/188ns
Switching Energy: 570µJ
Test Condition: 400V, 15A, 15Ohm, 15V
Gate Charge: 87 nC
Part Status: Active
Current - Collector (Ic) (Max): 30 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 45 A
Power - Max: 130 W
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1000+1.21 EUR
Mindestbestellmenge: 1000
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TLE88812TNAKSA1 Infineon-TLE8881-2-DataSheet-v01_00-EN.pdf?fileId=5546d4626cb27db2016d5d74fb3a0492
TLE88812TNAKSA1
Hersteller: Infineon Technologies
Description: ALTERNATOR_IC
Packaging: Tube
Package / Case: TO-220-5
Voltage - Output: 12V
Mounting Type: Through Hole
Number of Outputs: 1
Voltage - Input: 6V ~ 18V
Operating Temperature: -40°C ~ 175°C (TJ)
Supplier Device Package: PG-TO220-5-12
Part Status: Active
Grade: Automotive
Qualification: AEC-Q100
auf Bestellung 398 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+20.26 EUR
10+18.62 EUR
25+17.84 EUR
100+15.72 EUR
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1EDU20I12SVXUMA1 Infineon-1EDS20I12SV-DS-v01_00-EN.pdf?fileId=5546d46145f1f3a40145faf0aa200fc1
1EDU20I12SVXUMA1
Hersteller: Infineon Technologies
Description: DIGITAL ISO 5KV 1CH GATE DVR
Packaging: Tape & Reel (TR)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Technology: Magnetic Coupling
Voltage - Isolation: 5000Vrms
Part Status: Active
Number of Channels: 1
Produkt ist nicht verfügbar
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1EDU20I12SVXUMA1 Infineon-1EDS20I12SV-DS-v01_00-EN.pdf?fileId=5546d46145f1f3a40145faf0aa200fc1
1EDU20I12SVXUMA1
Hersteller: Infineon Technologies
Description: DIGITAL ISO 5KV 1CH GATE DVR
Packaging: Cut Tape (CT)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Technology: Magnetic Coupling
Voltage - Isolation: 5000Vrms
Part Status: Active
Number of Channels: 1
Produkt ist nicht verfügbar
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F4100R12KS4BOSA1 Infineon-F4_100R12KS4-DS-v02_01-en_de.pdf?fileId=db3a304412b407950112b4327b185851
F4100R12KS4BOSA1
Hersteller: Infineon Technologies
Description: IGBT MOD 1200V 130A 660W
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 125°C
Vce(on) (Max) @ Vge, Ic: 3.75V @ 15V, 100A
NTC Thermistor: Yes
Supplier Device Package: Module
Part Status: Active
Current - Collector (Ic) (Max): 130 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 660 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 6.8 nF @ 25 V
auf Bestellung 10 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+192.81 EUR
10+167.38 EUR
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SLB9665TT20FW561XUMA1
Hersteller: Infineon Technologies
Description: OPTIGA EMBEDDED SECURITY TRUSTED
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
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SLB9665VQ20FW560XUMA2 SLB9665xx2.0.pdf
SLB9665VQ20FW560XUMA2
Hersteller: Infineon Technologies
Description: SECURITY IC'S/AUTHENTICATION IC'
Packaging: Tape & Reel (TR)
Package / Case: 32-VFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: LPC
Operating Temperature: -20°C ~ 85°C (TA)
Voltage - Supply: 3V ~ 3.6V
Program Memory Type: NVM (7.04kB)
Applications: Trusted Platform Module (TPM)
Core Processor: 16-Bit
Supplier Device Package: PG-VQFN-32-13
Part Status: Not For New Designs
Number of I/O: 1
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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IPD50N06S2L13ATMA2 Infineon-IPD50N06S2L_13-DS-v01_00-en.pdf?fileId=db3a304412b407950112b433e8e55e1a
IPD50N06S2L13ATMA2
Hersteller: Infineon Technologies
Description: MOSFET N-CH 55V 50A TO252-31
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 12.7mOhm @ 34A, 10V
Power Dissipation (Max): 136W (Tc)
Vgs(th) (Max) @ Id: 2V @ 80µA
Supplier Device Package: PG-TO252-3-11
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 69 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2500+0.95 EUR
Mindestbestellmenge: 2500
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IPB110P06LMATMA1 Infineon-IPB110P06LM-DS-v02_00-EN.pdf?fileId=5546d46269e1c019016a03e2d06000ae
IPB110P06LMATMA1
Hersteller: Infineon Technologies
Description: MOSFET P-CH 60V 100A TO263-3
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 11mOhm @ 100A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 2V @ 5.55mA
Supplier Device Package: PG-TO263-3-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 281 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8500 pF @ 30 V
auf Bestellung 2000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1000+2.41 EUR
2000+2.36 EUR
Mindestbestellmenge: 1000
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IPB110P06LMATMA1 Infineon-IPB110P06LM-DS-v02_00-EN.pdf?fileId=5546d46269e1c019016a03e2d06000ae
IPB110P06LMATMA1
Hersteller: Infineon Technologies
Description: MOSFET P-CH 60V 100A TO263-3
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 11mOhm @ 100A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 2V @ 5.55mA
Supplier Device Package: PG-TO263-3-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 281 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8500 pF @ 30 V
auf Bestellung 2170 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+6.74 EUR
10+4.44 EUR
100+3.14 EUR
500+2.89 EUR
Mindestbestellmenge: 3
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AUIRFR9024NTRL INFN-S-A0002298863-1.pdf?t.download=true&u=5oefqw
AUIRFR9024NTRL
Hersteller: Infineon Technologies
Description: MOSFET P-CH 55V 11A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 175mOhm @ 6.6A, 10V
Power Dissipation (Max): 38W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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CY8CMBR3150-LQXIT
Hersteller: Infineon Technologies
Description: CAPSENSE EXPRESS
Packaging: Tape & Reel (TR)
Part Status: Obsolete
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BSZ042N04NS
Hersteller: Infineon Technologies
Description: N-CHANNEL POWER MOSFET
Produkt ist nicht verfügbar
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BC847BE6433 INFNS14907-1.pdf?t.download=true&u=5oefqw
BC847BE6433
Hersteller: Infineon Technologies
Description: TRANS NPN 45V 0.1A SOT23
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
Frequency - Transition: 250MHz
Supplier Device Package: PG-SOT23
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 330 mW
auf Bestellung 34790 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
8689+0.048 EUR
Mindestbestellmenge: 8689
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TLS850F2TAV50ATMA1 Infineon-TLS850F2TA%20V50-DataSheet-v01_00-EN.pdf?fileId=5546d46266a498f50166e8fa53582ac5
TLS850F2TAV50ATMA1
Hersteller: Infineon Technologies
Description: IC REG LIN 5V 500MA PG-TO263-7-1
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 500mA
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 80 µA
Voltage - Input (Max): 40V
Number of Regulators: 1
Supplier Device Package: PG-TO263-7-1
Voltage - Output (Min/Fixed): 5V
Control Features: Enable, Power Fail
Part Status: Active
PSRR: 59dB (100Hz)
Voltage Dropout (Max): 0.175V @ 250mA
Protection Features: Over Current, Over Temperature
Current - Supply (Max): 82 µA
Grade: Automotive
Qualification: AEC-Q100
Produkt ist nicht verfügbar
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IPI65R310CFDXKSA1700 Infineon-IPX65R310CFD-DS-v02_03-en[1].pdf?fileId=db3a30432f91014f012f9caff105741c
IPI65R310CFDXKSA1700
Hersteller: Infineon Technologies
Description: IPI65R310 - 650V AND 700V COOLMO
auf Bestellung 1500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
336+1.58 EUR
Mindestbestellmenge: 336
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IPI120N04S302AKSA1 Infineon-IPP_B_I120N04S3_02-DS-v01_00-en.pdf?folderId=db3a304412b407950112b42b75b74520&fileId=db3a304412b407950112b42ba1cd4583&ack=t
IPI120N04S302AKSA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 40V 120A TO262-3
Packaging: Bulk
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 2.3mOhm @ 80A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 230µA
Supplier Device Package: PG-TO262-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 210 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 14300 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 50600 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
82+5.53 EUR
Mindestbestellmenge: 82
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IPP120N04S3-02 INFNS10669-1.pdf?t.download=true&u=5oefqw
IPP120N04S3-02
Hersteller: Infineon Technologies
Description: PFET, 120A I(D), 40V, 0.0023OHM,
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 2.3mOhm @ 80A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 230µA
Supplier Device Package: PG-TO220-3-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 210 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 14300 pF @ 25 V
auf Bestellung 30607 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
94+5.33 EUR
Mindestbestellmenge: 94
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IPP60R360P7 Infineon-IPP60R360P7-DS-v02_02-EN.pdf?fileId=5546d46259d9a4bf015a5be590fa3cc2
IPP60R360P7
Hersteller: Infineon Technologies
Description: POWER FIELD-EFFECT TRANSISTOR, 6
Packaging: Bulk
Part Status: Active
Produkt ist nicht verfügbar
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IPL60R385CPAUMA1 IPL60R385CP_2_0.pdf?folderId=db3a3043163797a6011637d4bae7003b&fileId=db3a3043284aacd801285d06e55327e3
IPL60R385CPAUMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 600V 9A 4VSON
Packaging: Bulk
Package / Case: 4-PowerTSFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 385mOhm @ 5.2A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 340µA
Supplier Device Package: PG-VSON-4
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 790 pF @ 100 V
auf Bestellung 52754 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
290+1.75 EUR
Mindestbestellmenge: 290
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IDK10G65C5XTMA2 Infineon-IDK10G65C5-DS-v02_00-en.pdf?fileId=db3a304342e8be2c0142fbfb87cd4ed3
IDK10G65C5XTMA2
Hersteller: Infineon Technologies
Description: DIODE SIL CARB 650V 10A PGTO2632
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 300pF @ 1V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: PG-TO263-2
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 10 A
auf Bestellung 21000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1000+2.36 EUR
2000+2.31 EUR
Mindestbestellmenge: 1000
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BB844E6327HTSA1 INFNS15711-1.pdf?t.download=true&u=5oefqw
BB844E6327HTSA1
Hersteller: Infineon Technologies
Description: DIODE VARACTOR 18V DUAL SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Diode Type: 1 Pair Common Cathode
Operating Temperature: -55°C ~ 150°C (TJ)
Capacitance @ Vr, F: 13pF @ 8V, 1MHz
Capacitance Ratio Condition: C2/C8
Supplier Device Package: PG-SOT23
Part Status: Active
Voltage - Peak Reverse (Max): 18 V
Capacitance Ratio: 3.8
auf Bestellung 14779 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
20+0.9 EUR
33+0.55 EUR
100+0.35 EUR
500+0.26 EUR
1000+0.24 EUR
Mindestbestellmenge: 20
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TLE4976LHALA1 TLE4976x+Data+Sheet+V1_1.pdf?folderId=db3a30431689f4420116a096e1db033e&fileId=db3a304319c6f18c0119cd9980a57ae7
TLE4976LHALA1
Hersteller: Infineon Technologies
Description: MAGNETIC SWITCH UNIPOLAR SSO-3-2
Packaging: Bulk
Features: Temperature Compensated
Package / Case: 3-SSIP, SSO-3-02
Output Type: Open Collector
Polarization: South Pole
Mounting Type: Through Hole
Function: Unipolar Switch
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 3V ~ 18V
Technology: Hall Effect
Sensing Range: 11mT Trip, 5mT Release
Current - Supply (Max): 17mA
Supplier Device Package: PG-SSO-3-2
Test Condition: -40°C ~ 150°C
Grade: Automotive
Qualification: AEC-Q100
auf Bestellung 188000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
491+0.93 EUR
Mindestbestellmenge: 491
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TLE4939 Infineon-TLE493D-A1B6-DS-v01_00-EN.pdf?fileId=5546d462602a9dc801606f142b5c7fe5
Hersteller: Infineon Technologies
Description: MAGNETIC SPEED SENSORS
Packaging: Bulk
Part Status: Active
auf Bestellung 26000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
670+0.76 EUR
Mindestbestellmenge: 670
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TLE4941-HT TLE4941%2CC%20Prod.%20Brief.pdf
TLE4941-HT
Hersteller: Infineon Technologies
Description: MAG SWITCH SPEC PURP SSO-2-2
Packaging: Bulk
Package / Case: 2-SIP, SSO-2-2
Output Type: Current Source
Mounting Type: Through Hole
Function: Special Purpose
Voltage - Supply: 4.5V ~ 20V
Technology: Hall Effect
Current - Supply (Max): 16.8mA
Supplier Device Package: PG-SSO-2-2
auf Bestellung 34000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
183+2.76 EUR
Mindestbestellmenge: 183
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TLE4941-1-HT TLE4941%2CC%20Prod.%20Brief.pdf
TLE4941-1-HT
Hersteller: Infineon Technologies
Description: MAG SWITCH SPEC PURP SSO-2-2
Packaging: Bulk
Package / Case: 2-SIP, SSO-2-2
Output Type: Current Source
Mounting Type: Through Hole
Function: Special Purpose
Voltage - Supply: 4.5V ~ 20V
Technology: Hall Effect
Current - Supply (Max): 16.8mA
Supplier Device Package: PG-SSO-2-2
auf Bestellung 24000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
171+2.97 EUR
Mindestbestellmenge: 171
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TLE4957CE6247HAMA1 Part_Number_Guide_Web.pdf
Hersteller: Infineon Technologies
Description: MAGNETIC SWITCH HALL EFF SSO-3
auf Bestellung 34500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
176+3.14 EUR
Mindestbestellmenge: 176
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TLE4957C2E6847HAMA1 fundamentals-of-power-semiconductors
Hersteller: Infineon Technologies
Description: MAGNETIC SWITCH HALL EFF SSO-3
Packaging: Bulk
Grade: Automotive
Qualification: AEC-Q100
auf Bestellung 7500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
163+3.04 EUR
Mindestbestellmenge: 163
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TLE4957C-NE6747
TLE4957C-NE6747
Hersteller: Infineon Technologies
Description: MAGNETIC SWITCH HALL EFFECT SENS
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
176+3.14 EUR
Mindestbestellmenge: 176
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TLE4957CB2E6747XTMA1 TLE4957Cx-2%20E6747.pdf
Hersteller: Infineon Technologies
Description: MAGNETIC SWITCH HALL EFF SSOM-3
Packaging: Bulk
Part Status: Obsolete
Grade: Automotive
Qualification: AEC-Q100
auf Bestellung 1500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
163+3.12 EUR
Mindestbestellmenge: 163
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TLE4957C-2 E6247
TLE4957C-2 E6247
Hersteller: Infineon Technologies
Description: MAGNETIC SWITCH HALL EFFECT SENS
auf Bestellung 2780 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
173+3.19 EUR
Mindestbestellmenge: 173
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TLE4941 Infineon-TLE4941C-DS-v03_00-en.pdf?fileId=db3a30433899edae0138c3cd41cd0334
Hersteller: Infineon Technologies
Description: MAGNETIC SWITCH HALL EFFECT SENS
auf Bestellung 52000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
145+3.59 EUR
Mindestbestellmenge: 145
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TLE4957CNE6747HAMA1 fundamentals-of-power-semiconductors
Hersteller: Infineon Technologies
Description: MAGNETIC SWITCH HALL EFF SSO-3
Packaging: Bulk
Part Status: Obsolete
Grade: Automotive
Qualification: AEC-Q100
auf Bestellung 61876 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
140+3.53 EUR
Mindestbestellmenge: 140
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TLE4954CBXTMA1 INFNS30567-1.pdf?t.download=true&u=5oefqw
Hersteller: Infineon Technologies
Description: MAGNETIC SWITCH SPECIAL PURPOSE
auf Bestellung 3175 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
152+3.43 EUR
Mindestbestellmenge: 152
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TLE4957CE6747HAMA1 TLE4957C_PB_26092013.pdf?fileId=db3a3043414fd3ef014159b1f5a06bf1
Hersteller: Infineon Technologies
Description: MAGNETIC SWITCH HALL EFF SSO-3
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
152+3.65 EUR
Mindestbestellmenge: 152
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TLE4954CBE2XTMA1 Part_Number_Guide_Web.pdf
Hersteller: Infineon Technologies
Description: IC HALL EFFECT SENSOR SSOM-2
auf Bestellung 451 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
135+4.09 EUR
Mindestbestellmenge: 135
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TLE4983CSF47NHAMA1
Hersteller: Infineon Technologies
Description: IC SPEED SENSOR MAGN PG-SSO-3
Packaging: Bulk
Grade: Automotive
Qualification: AEC-Q100
auf Bestellung 26940 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
119+4.15 EUR
Mindestbestellmenge: 119
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TLE4983CHTE8547
TLE4983CHTE8547
Hersteller: Infineon Technologies
Description: MAG SWITCH SPEED SENSOR 3SSO
auf Bestellung 4000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
94+5.43 EUR
Mindestbestellmenge: 94
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FF900R12ME7PB11BPSA1 Infineon-FF900R12ME7P_B11-DataSheet-v02_00-EN.pdf?fileId=5546d46273a5366f0173b496936b4156
FF900R12ME7PB11BPSA1
Hersteller: Infineon Technologies
Description: MEDIUM POWER ECONO
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge
Operating Temperature: -40°C ~ 175°C
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 900A
NTC Thermistor: No
Supplier Device Package: AG-ECONOD
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 900 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Cutoff (Max): 100 µA
Input Capacitance (Cies) @ Vce: 122 nF @ 25 V
auf Bestellung 12 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+345.01 EUR
12+324.18 EUR
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AUIRFR6215TRL IRSDS11569-1.pdf?t.download=true&u=5oefqw
AUIRFR6215TRL
Hersteller: Infineon Technologies
Description: MOSFET P-CH 150V 13A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
Rds On (Max) @ Id, Vgs: 295mOhm @ 6.6A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 66 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 860 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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BAS4007WH6327XTSA1 INFNS19700-1.pdf?t.download=true&u=5oefqw
BAS4007WH6327XTSA1
Hersteller: Infineon Technologies
Description: DIODE ARR SCHOTT 40V SOT343-4-3
Packaging: Tape & Reel (TR)
Package / Case: SC-82A, SOT-343
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 100 ps
Technology: Schottky
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 120mA (DC)
Supplier Device Package: PG-SOT343-4-3
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 40 mA
Current - Reverse Leakage @ Vr: 1 µA @ 30 V
auf Bestellung 11992 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.12 EUR
6000+0.11 EUR
9000+0.1 EUR
Mindestbestellmenge: 3000
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IR3567AMMS02TRP IR3567A_PB_v3.04_10-1-13.pdf
IR3567AMMS02TRP
Hersteller: Infineon Technologies
Description: IC REG BUCK 56VQFN
Packaging: Tape & Reel (TR)
Package / Case: 56-VFQFN Exposed Pad
Output Type: PWM
Mounting Type: Surface Mount
Function: Step-Down
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Positive
Frequency - Switching: 200kHz ~ 2MHz
Topology: Buck
Voltage - Supply (Vcc/Vdd): 3.3V
Supplier Device Package: PG-VQFN-56-900
Synchronous Rectifier: No
Control Features: Enable, Power Good
Serial Interfaces: I²C, PMBus, SMBus
Output Phases: 6
Clock Sync: No
Part Status: Obsolete
Number of Outputs: 8
Produkt ist nicht verfügbar
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BAS4006WH6327XTSA1 INFNS19700-1.pdf?t.download=true&u=5oefqw
BAS4006WH6327XTSA1
Hersteller: Infineon Technologies
Description: DIODE ARR SCHOT 40V 120MA SOT323
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 100 ps
Technology: Schottky
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 120mA (DC)
Supplier Device Package: PG-SOT323
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 40 mA
Current - Reverse Leakage @ Vr: 1 µA @ 30 V
Produkt ist nicht verfügbar
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BSS169IXTSA1 Infineon-BSS169I-DataSheet-v02_01-EN.pdf?fileId=5546d46277921c320177a42ad9911d52
BSS169IXTSA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 100V 190MA SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel, Depletion Mode
Current - Continuous Drain (Id) @ 25°C: 190mA (Ta)
Rds On (Max) @ Id, Vgs: 2.9Ohm @ 190mA, 10V
Power Dissipation (Max): 360mW (Ta)
Vgs(th) (Max) @ Id: 1.8V @ 50µA
Supplier Device Package: PG-SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 0V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 2.1 nC @ 7 V
Input Capacitance (Ciss) (Max) @ Vds: 51 pF @ 25 V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.11 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
BSS169IXTSA1 Infineon-BSS169I-DataSheet-v02_01-EN.pdf?fileId=5546d46277921c320177a42ad9911d52
BSS169IXTSA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 100V 190MA SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel, Depletion Mode
Current - Continuous Drain (Id) @ 25°C: 190mA (Ta)
Rds On (Max) @ Id, Vgs: 2.9Ohm @ 190mA, 10V
Power Dissipation (Max): 360mW (Ta)
Vgs(th) (Max) @ Id: 1.8V @ 50µA
Supplier Device Package: PG-SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 0V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 2.1 nC @ 7 V
Input Capacitance (Ciss) (Max) @ Vds: 51 pF @ 25 V
auf Bestellung 4734 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
31+0.58 EUR
49+0.36 EUR
102+0.17 EUR
1000+0.15 EUR
Mindestbestellmenge: 31
Im Einkaufswagen  Stück im Wert von  UAH
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