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IFX27001TFV18 IFX27001TFV18 Infineon Technologies INFN-S-A0004846925-1.pdf?t.download=true&u=5oefqw Description: IC REG LINEAR FIXED LDO REG
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IFX27001TFV26 IFX27001TFV26 Infineon Technologies INFN-S-A0004846925-1.pdf?t.download=true&u=5oefqw Description: IC REG LINEAR FIXED LDO REG
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TDA21325XUMA1 Infineon Technologies Description: IC CONTROLLER
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TLE9855QXXUMA2 TLE9855QXXUMA2 Infineon Technologies Infineon-TLE9855QX-DS-DataSheet-v01_00-EN.pdf?fileId=5546d462689a790c0169104901f03e18 Description: IC MCU 32BIT 96KB FLASH 48VQFN
Packaging: Tape & Reel (TR)
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 40MHz
Program Memory Size: 96KB (96K x 8)
RAM Size: 4K x 8
Operating Temperature: -40°C ~ 150°C (TJ)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 4K x 8
Core Processor: ARM® Cortex®-M0
Data Converters: A/D 9x8b, 12x10b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 5.5V ~ 28V
Connectivity: LINbus, SSC, UART/USART
Peripherals: Brown-out Detect/Reset, DMA, POR, PWM, WDT
Supplier Device Package: PG-VQFN-48-31
Part Status: Active
Number of I/O: 10
DigiKey Programmable: Not Verified
Grade: Automotive
Qualification: AEC-Q100
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IPP086N10N3 IPP086N10N3 Infineon Technologies Infineon-IPP086N10N3G-DS-v02_06-en.pdf?fileId=db3a30431ce5fb52011d1ac5c8fa1358 Description: N-CHANNEL POWER MOSFET
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IPP086N10N3G IPP086N10N3G Infineon Technologies INFNS30358-1.pdf?t.download=true&u=5oefqw Description: POWER FIELD-EFFECT TRANSISTOR, 8
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ETD630N18P60HPSA1 ETD630N18P60HPSA1 Infineon Technologies Infineon-ETT630N18P60-DataSheet-v03_01-EN.pdf?fileId=5546d46278d64ffd017931ecaa3c3c8f Description: 60 MM THYRISTOR/DIODE MODULE
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: 135°C (TJ)
Structure: Series Connection - SCR/Diode
Current - Hold (Ih) (Max): 300 mA
Current - Gate Trigger (Igt) (Max): 250 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 16800A, 20000A
Number of SCRs, Diodes: 1 SCR, 1 Diode
Current - On State (It (AV)) (Max): 628 A
Voltage - Gate Trigger (Vgt) (Max): 2 V
Part Status: Active
Current - On State (It (RMS)) (Max): 700 A
Voltage - Off State: 1.8 kV
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ETT630N18P60HPSA1 ETT630N18P60HPSA1 Infineon Technologies Infineon-ETT630N18P60-DataSheet-v03_01-EN.pdf?fileId=5546d46278d64ffd017931ecaa3c3c8f Description: 60 MM THYRISTOR/THYRISTOR MODULE
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: 135°C (TJ)
Structure: Series Connection - All SCRs
Current - Hold (Ih) (Max): 300 mA
Current - Gate Trigger (Igt) (Max): 250 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 16800A, 20000A
Number of SCRs, Diodes: 2 SCRs
Current - On State (It (AV)) (Max): 628 A
Voltage - Gate Trigger (Vgt) (Max): 2 V
Part Status: Active
Current - On State (It (RMS)) (Max): 700 A
Voltage - Off State: 1.8 kV
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TLE4941CNBAMA1 Infineon Technologies Infineon-TLE4941C-DS-v03_00-en.pdf?fileId=db3a30433899edae0138c3cd41cd0334 Description: MAGNETIC SWITCH HALL EFFECT SENS
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TLE4941CN Infineon Technologies Infineon-TLE4941C-DS-v03_00-en.pdf?fileId=db3a30433899edae0138c3cd41cd0334 Description: MAGNETIC SWITCH HALL EFFECT SENS
Packaging: Bulk
Package / Case: 2-SIP, SSO-2-53
Output Type: Current Source
Polarization: North Pole, South Pole
Mounting Type: Through Hole
Function: Special Purpose
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 4.5V ~ 20V
Technology: Hall Effect
Current - Supply (Max): 16.8mA
Supplier Device Package: PG-SSO-2-53
Part Status: Active
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BAW56E6433 BAW56E6433 Infineon Technologies INFNS11183-1.pdf?t.download=true&u=5oefqw Description: DIODE ARRAY GP 80V 200MA PGSOT23
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 200mA (DC)
Supplier Device Package: PG-SOT23
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 150 nA @ 70 V
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TLE4476DATMA1 TLE4476DATMA1 Infineon Technologies Infineon-TLE4476D-DS-v02_50-EN.pdf?fileId=5546d46258fc0bc1015969d22e8e41b9 Description: IC REG LINEAR 3.3V/5V TO252-5-11
Packaging: Tape & Reel (TR)
Package / Case: TO-252-5, DPak (4 Leads + Tab), TO-252AD
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 350mA, 430mA
Operating Temperature: -40°C ~ 170°C
Output Configuration: Positive
Current - Quiescent (Iq): 150 µA
Voltage - Input (Max): 42V
Number of Regulators: 2
Supplier Device Package: PG-TO252-5-11
Voltage - Output (Min/Fixed): 3.3V, 5V
Control Features: Enable
Part Status: Active
PSRR: 60dB (20Hz ~ 20kHz), 60dB (20Hz ~ 20kHz)
Voltage Dropout (Max): -, 0.7V @ 330mA
Protection Features: Over Current, Over Temperature, Over Voltage, Reverse Polarity, Short Circuit
Current - Supply (Max): 13 mA
Grade: Automotive
Qualification: AEC-Q100
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BSC019N04NSG Infineon Technologies Description: BSC019N04 - 12V-300V N-CHANNEL P
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IDB06S60CATMA2 IDB06S60CATMA2 Infineon Technologies IDB06S60C.pdf Description: DIODE SIL CARB 600V 6A TO263-3-2
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 280pF @ 1V, 1MHz
Current - Average Rectified (Io): 6A
Supplier Device Package: PG-TO263-3-2
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 6 A
Current - Reverse Leakage @ Vr: 80 µA @ 600 V
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SFH 757V Infineon Technologies SFH757(V).pdf Description: TRANSMITTER DIODE FIBER OPTIC
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IPW60R041C6 IPW60R041C6 Infineon Technologies INFNS16356-1.pdf?t.download=true&u=5oefqw Description: 600V, 0.041OHM, N-CHANNEL MOSFET
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IPW65R045C7 IPW65R045C7 Infineon Technologies INFNS27212-1.pdf?t.download=true&u=5oefqw Description: 46A, 650V, 0.045OHM, N-CHANNEL M
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 46A (Tc)
Rds On (Max) @ Id, Vgs: 45mOhm @ 24.9A, 10V
Power Dissipation (Max): 227W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1.25mA
Supplier Device Package: PG-TO247-3-41
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 93 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4340 pF @ 400 V
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BSS139IXTSA1 BSS139IXTSA1 Infineon Technologies Infineon-BSS139I-DataSheet-v02_01-EN.pdf?fileId=5546d46277921c320177a421f99f1d4f Description: MOSFET N-CH 250V 100MA SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel, Depletion Mode
Current - Continuous Drain (Id) @ 25°C: 100mA (Ta)
Rds On (Max) @ Id, Vgs: 14Ohm @ 100mA, 10V
Power Dissipation (Max): 360mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 56µA
Supplier Device Package: PG-SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 0V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 2.3 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 60 pF @ 25 V
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BSS139IXTSA1 BSS139IXTSA1 Infineon Technologies Infineon-BSS139I-DataSheet-v02_01-EN.pdf?fileId=5546d46277921c320177a421f99f1d4f Description: MOSFET N-CH 250V 100MA SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel, Depletion Mode
Current - Continuous Drain (Id) @ 25°C: 100mA (Ta)
Rds On (Max) @ Id, Vgs: 14Ohm @ 100mA, 10V
Power Dissipation (Max): 360mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 56µA
Supplier Device Package: PG-SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 0V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 2.3 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 60 pF @ 25 V
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IRF6217TRPBF-1 IRF6217TRPBF-1 Infineon Technologies IRF6217PbF-1.pdf Description: MOSFET P-CH 150V 700MA 8SO
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XC2268N40F80LABKXUMA1 XC2268N40F80LABKXUMA1 Infineon Technologies XC226xN.pdf Description: IC MCU 16/32B 320KB FLSH 100LQFP
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BCR583E6327 BCR583E6327 Infineon Technologies INFNS10861-1.pdf?t.download=true&u=5oefqw Description: TRANS PREBIAS PNP 50V SOT23-3
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 50mA, 5V
Supplier Device Package: PG-SOT23-3-1
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 330 mW
Frequency - Transition: 150 MHz
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Grade: Automotive
Qualification: AEC-Q101
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BCR583 BCR583 Infineon Technologies INFNS17205-1.pdf?t.download=true&u=5oefqw Description: TRANS PREBIAS
Packaging: Bulk
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BSS123IXTSA1 BSS123IXTSA1 Infineon Technologies Infineon-BSS123I-DataSheet-v02_00-EN.pdf?fileId=5546d46277921c320177a421ae8a1d46 Description: SMALL SIGNAL MOSFETS PG-SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 190mA (Ta)
Rds On (Max) @ Id, Vgs: 6Ohm @ 190mA, 10V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 1.8V @ 13µA
Supplier Device Package: PG-SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 0.63 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 15 pF @ 50 V
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BSS123IXTSA1 BSS123IXTSA1 Infineon Technologies Infineon-BSS123I-DataSheet-v02_00-EN.pdf?fileId=5546d46277921c320177a421ae8a1d46 Description: SMALL SIGNAL MOSFETS PG-SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 190mA (Ta)
Rds On (Max) @ Id, Vgs: 6Ohm @ 190mA, 10V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 1.8V @ 13µA
Supplier Device Package: PG-SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 0.63 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 15 pF @ 50 V
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133+0.13 EUR
500+0.097 EUR
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T880N14TOFXPSA1 T880N14TOFXPSA1 Infineon Technologies Infineon-T880N-DS-v01_00-en_de.pdf?fileId=db3a304323b87bc20123ffb85bf75bf8 Description: SCR MODULE 1800V 1.75A DO200AB
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TLE94108ESXUMA1 TLE94108ESXUMA1 Infineon Technologies Infineon-TLE94108ES-DataSheet-v01_00-EN.pdf?fileId=5546d462773f932401774376fc474287 Description: IC HALF BRIDGE DRIVER 24TSDSO
Packaging: Tape & Reel (TR)
Features: Charge Pump
Package / Case: 24-TSSOP (0.154", 3.90mm Width) Exposed Pad
Mounting Type: Surface Mount
Interface: Logic, PWM, SPI
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge (8)
Voltage - Supply: 3V ~ 5.5V
Rds On (Typ): 1.3Ohm LS, 1.3Ohm HS
Applications: DC Motors, General Purpose
Voltage - Load: 5.5V ~ 20V
Supplier Device Package: PG-TSDSO-24
Fault Protection: Current Limiting, Over Temperature, Short Circuit
Load Type: Inductive, Resistive
Part Status: Active
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TLE94108ESXUMA1 TLE94108ESXUMA1 Infineon Technologies Infineon-TLE94108ES-DataSheet-v01_00-EN.pdf?fileId=5546d462773f932401774376fc474287 Description: IC HALF BRIDGE DRIVER 24TSDSO
Packaging: Cut Tape (CT)
Features: Charge Pump
Package / Case: 24-TSSOP (0.154", 3.90mm Width) Exposed Pad
Mounting Type: Surface Mount
Interface: Logic, PWM, SPI
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge (8)
Voltage - Supply: 3V ~ 5.5V
Rds On (Typ): 1.3Ohm LS, 1.3Ohm HS
Applications: DC Motors, General Purpose
Voltage - Load: 5.5V ~ 20V
Supplier Device Package: PG-TSDSO-24
Fault Protection: Current Limiting, Over Temperature, Short Circuit
Load Type: Inductive, Resistive
Part Status: Active
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10+3.1 EUR
25+2.84 EUR
100+2.55 EUR
250+2.41 EUR
500+2.33 EUR
1000+2.26 EUR
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IAUC41N06S5L100ATMA1 IAUC41N06S5L100ATMA1 Infineon Technologies Infineon-IAUC41N06S5L100-DataSheet-v01_00-EN.pdf?fileId=5546d46271bf4f920171f45f332861ae Description: MOSFET N-CH 60V 41A TDSON-8-33
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 41A (Tj)
Rds On (Max) @ Id, Vgs: 10mOhm @ 20A, 10V
Power Dissipation (Max): 42W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 13µA
Supplier Device Package: PG-TDSON-8-33
Part Status: Active
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 16.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1205 pF @ 30 V
Grade: Automotive
Qualification: AEC-Q101
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100+0.82 EUR
500+0.64 EUR
1000+0.58 EUR
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BCW61E6384HTMA1 Infineon Technologies fundamentals-of-power-semiconductors Description: TRANSISTOR AF SOT23
Packaging: Bulk
Part Status: Last Time Buy
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MB89485-G-218-CHIP-CN Infineon Technologies Description: IC MCU 8BIT 16KB MROM
Packaging: Tray
Speed: 12.5MHz
Program Memory Size: 16KB (16K x 8)
RAM Size: 512 x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External
Program Memory Type: Mask ROM
Core Processor: F²MC-8L
Data Converters: A/D 4x10b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 2.2V ~ 5.5V
Connectivity: Serial I/O, UART/USART
Peripherals: LCD, POR, PWM, WDT
Part Status: Obsolete
Number of I/O: 39
DigiKey Programmable: Not Verified
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MB89983L-G-218-CHIP Infineon Technologies Description: IC MCU 8BIT 8KB MROM
Packaging: Tray
Speed: 4.2MHz
Program Memory Size: 8KB (8K x 8)
RAM Size: 256 x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External
Program Memory Type: Mask ROM
Core Processor: F²MC-8L
Data Converters: A/D 4x8b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 2.2V ~ 6V
Peripherals: LCD, POR, PWM, WDT
Part Status: Obsolete
Number of I/O: 47
Produkt ist nicht verfügbar
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BAT5404WH6327XTSA1 BAT5404WH6327XTSA1 Infineon Technologies INFNS15399-1.pdf?t.download=true&u=5oefqw Description: DIODE ARR SCHOT 30V 200MA SOT323
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 5 ns
Technology: Schottky
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 200mA (DC)
Supplier Device Package: PG-SOT323
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 100 mA
Current - Reverse Leakage @ Vr: 2 µA @ 25 V
Grade: Automotive
Qualification: AEC-Q101
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60+0.3 EUR
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500+0.14 EUR
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BAT5402LRHE6327XTSA1 BAT5402LRHE6327XTSA1 Infineon Technologies INFNS15399-1.pdf?t.download=true&u=5oefqw Description: DIODE SCHOTT 30V 200MA TSLP-2-7
Packaging: Cut Tape (CT)
Package / Case: SOD-882
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 5 ns
Technology: Schottky
Capacitance @ Vr, F: 10pF @ 1V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: PG-TSLP-2-7
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 100 mA
Current - Reverse Leakage @ Vr: 2 µA @ 25 V
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FD500R65KE3KNOSA1 FD500R65KE3KNOSA1 Infineon Technologies Infineon-FD500R65KE3_K-DS-v03_00-en_de.pdf?fileId=db3a30432cd42ee3012cea107abc562f Description: IGBT MOD 6500V 500A 9600W
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BAR6702VH6327XTSA1 BAR6702VH6327XTSA1 Infineon Technologies Infineon-BAR67-02V-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c7e7124d1017efcc0e8f30749 Description: RF DIODE PIN 150V 250MW SC79-2
Packaging: Cut Tape (CT)
Package / Case: SC-79, SOD-523
Diode Type: PIN - Single
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 0.55pF @ 5V, 1MHz
Resistance @ If, F: 1Ohm @ 10mA, 100MHz
Voltage - Peak Reverse (Max): 150V
Supplier Device Package: PG-SC79-2
Part Status: Active
Current - Max: 200 mA
Power Dissipation (Max): 250 mW
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BAR65-03WE6327 BAR65-03WE6327 Infineon Technologies INFNS15696-1.pdf?t.download=true&u=5oefqw Description: BAR65 - PIN DIODE
Packaging: Bulk
Package / Case: SC-76, SOD-323
Diode Type: PIN - Single
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 0.8pF @ 3V, 1MHz
Resistance @ If, F: 900mOhm @ 10mA, 100MHz
Voltage - Peak Reverse (Max): 30V
Supplier Device Package: PG-SOD323-2-1
Part Status: Active
Current - Max: 100 mA
Power Dissipation (Max): 250 mW
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CY24212KSXC-5 CY24212KSXC-5 Infineon Technologies Description: IC CLOCK GEN MPEG 8-SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Frequency - Max: 27.027MHz
Type: Clock Generator
Voltage - Supply: 3.135V ~ 3.465V
Supplier Device Package: 8-SOIC
DigiKey Programmable: Not Verified
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SPD03N50C3ATMA1 SPD03N50C3ATMA1 Infineon Technologies Infineon-SPD03N50C3-DS-v02_06-en.pdf?fileId=db3a30433f12d084013f144a43c7038b Description: MOSFET N-CH 500V 3.2A TO252-3
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.2A (Tc)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 2A, 10V
Power Dissipation (Max): 38W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 135µA
Supplier Device Package: PG-TO252-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 25 V
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SIPC03N50C3X1SA1 Infineon Technologies Description: TRANSISTOR N-CH
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SPD03N50C3BTMA1 SPD03N50C3BTMA1 Infineon Technologies Infineon-SPD03N50C3-DS-v02_06-en.pdf?fileId=db3a30433f12d084013f144a43c7038b Description: MOSFET N-CH 560V 3.2A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.2A (Tc)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 2A, 10V
Power Dissipation (Max): 38W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 135µA
Supplier Device Package: PG-TO252-3-11
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 560 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 25 V
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TDA16822XK TDA16822XK Infineon Technologies TDA16822.pdf Description: IC OFFLINE SWITCH FLYBACK 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -25°C ~ 130°C (TJ)
Duty Cycle: 72%
Frequency - Switching: 100kHz
Internal Switch(s): Yes
Voltage - Breakdown: 650V
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 9V ~ 17V
Supplier Device Package: PG-DIP-8
Fault Protection: Current Limiting, Open Loop, Over Load, Over Temperature, Over Voltage
Voltage - Start Up: 14 V
Control Features: Soft Start
Part Status: Discontinued at Digi-Key
Power (Watts): 20 W
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TC1766192F80HLBDKXUMA2 TC1766192F80HLBDKXUMA2 Infineon Technologies Infineon-TC1766-DS-v01_00-en.pdf?folderId=db3a304412b407950112b409ae7c0343&fileId=db3a304313553140011368a9b40e0224&ack=t Description: IC MCU 32BIT 1.5MB FLASH 176LQFP
Packaging: Tape & Reel (TR)
Package / Case: 176-LQFP
Mounting Type: Surface Mount
Speed: 80MHz
Program Memory Size: 1.5MB (1.5M x 8)
RAM Size: 108K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
Core Processor: TriCore™
Data Converters: A/D 2x10b, 32x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.42V ~ 1.58V
Connectivity: ASC, CANbus, MLI, MSC, SSC
Peripherals: DMA, POR, WDT
Supplier Device Package: PG-LQFP-176-5
Part Status: Obsolete
Number of I/O: 81
DigiKey Programmable: Not Verified
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BTS426L1E3062ABUMA1 BTS426L1E3062ABUMA1 Infineon Technologies BTS426L1.pdf Description: IC PWR SWITCH N-CHAN 1:1 TO263-5
Packaging: Tape & Reel (TR)
Features: Auto Restart
Package / Case: TO-263-5, D2PAK (4 Leads + Tab), TO-263BB
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 50mOhm
Input Type: Non-Inverting
Voltage - Load: 5V ~ 34V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 5.8A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-TO263-5-2
Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, Over Voltage, UVLO
Part Status: Not For New Designs
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IPTG011N08NM5ATMA1 IPTG011N08NM5ATMA1 Infineon Technologies Infineon-IPTG011N08NM5-DataSheet-v02_00-EN.pdf?fileId=5546d46277921c320177aa3f5c9e7d54 Description: MOSFET N-CH 80V 42A/408A HSOG-8
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSMD, Gull Wing
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 42A (Ta), 408A (Tc)
Rds On (Max) @ Id, Vgs: 1.1mOhm @ 150A, 10V
Power Dissipation (Max): 3.8W (Ta), 375W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 280µA
Supplier Device Package: PG-HSOG-8-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 223 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 17000 pF @ 40 V
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IPTG011N08NM5ATMA1 IPTG011N08NM5ATMA1 Infineon Technologies Infineon-IPTG011N08NM5-DataSheet-v02_00-EN.pdf?fileId=5546d46277921c320177aa3f5c9e7d54 Description: MOSFET N-CH 80V 42A/408A HSOG-8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSMD, Gull Wing
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 42A (Ta), 408A (Tc)
Rds On (Max) @ Id, Vgs: 1.1mOhm @ 150A, 10V
Power Dissipation (Max): 3.8W (Ta), 375W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 280µA
Supplier Device Package: PG-HSOG-8-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 223 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 17000 pF @ 40 V
auf Bestellung 1144 Stücke:
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1ED3124MU12HXUMA1 1ED3124MU12HXUMA1 Infineon Technologies Infineon-1ED31xxMU12H-DataSheet-v02_00-EN.pdf?fileId=5546d46274cf54d50174d97c37be1f67 Description: DGT ISO 1.2KV 1CH GT DVR DSO8-66
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Current - Peak Output: 14A
Technology: Magnetic Coupling
Current - Output High, Low: 5.5A, 5.5A
Voltage - Isolation: 1200Vrms
Approval Agency: UL
Supplier Device Package: PG-DSO-8-66
Rise / Fall Time (Typ): 15ns, 15ns
Common Mode Transient Immunity (Min): 200kV/µs
Part Status: Active
Number of Channels: 1
Voltage - Output Supply: 10V ~ 35V
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1ED3124MU12HXUMA1 1ED3124MU12HXUMA1 Infineon Technologies Infineon-1ED31xxMU12H-DataSheet-v02_00-EN.pdf?fileId=5546d46274cf54d50174d97c37be1f67 Description: DGT ISO 1.2KV 1CH GT DVR DSO8-66
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Current - Peak Output: 14A
Technology: Magnetic Coupling
Current - Output High, Low: 5.5A, 5.5A
Voltage - Isolation: 1200Vrms
Approval Agency: UL
Supplier Device Package: PG-DSO-8-66
Rise / Fall Time (Typ): 15ns, 15ns
Common Mode Transient Immunity (Min): 200kV/µs
Part Status: Active
Number of Channels: 1
Voltage - Output Supply: 10V ~ 35V
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1ED3491MU12MXUMA1 1ED3491MU12MXUMA1 Infineon Technologies infineon-1ed34x1mx12m-datasheet-en.pdf Description: DIGITAL ISO 1CH GT DVR DSO16-28
Packaging: Tape & Reel (TR)
Package / Case: 16-BSSOP (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Current - Peak Output: 9A
Technology: Magnetic Coupling
Approval Agency: UL, VDE
Supplier Device Package: PG-DSO-16-28
Rise / Fall Time (Typ): 15ns, 15ns
Part Status: Active
Number of Channels: 1
Voltage - Output Supply: 13V ~ 25V
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1ED3491MU12MXUMA1 1ED3491MU12MXUMA1 Infineon Technologies infineon-1ed34x1mx12m-datasheet-en.pdf Description: DIGITAL ISO 1CH GT DVR DSO16-28
Packaging: Cut Tape (CT)
Package / Case: 16-BSSOP (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Current - Peak Output: 9A
Technology: Magnetic Coupling
Approval Agency: UL, VDE
Supplier Device Package: PG-DSO-16-28
Rise / Fall Time (Typ): 15ns, 15ns
Part Status: Active
Number of Channels: 1
Voltage - Output Supply: 13V ~ 25V
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IDD05SG60CXTMA2 IDD05SG60CXTMA2 Infineon Technologies Infineon-IDD05SG60C-DS-v02_04-en.pdf?folderId=5546d4694909da4801490a07012f053b&fileId=db3a304327b897500127dd2fc4391a74 Description: DIODE SIL CARB 600V 5A PGTO2523
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 110pF @ 1V, 1MHz
Current - Average Rectified (Io): 5A
Supplier Device Package: PG-TO252-3
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Last Time Buy
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.3 V @ 5 A
Current - Reverse Leakage @ Vr: 30 µA @ 600 V
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BTS5434G BTS5434G Infineon Technologies INFNS05956-1.pdf?t.download=true&u=5oefqw Description: IC PWR SWITCH N-CHAN 1:1
Packaging: Bulk
Features: Slew Rate Controlled
Package / Case: 28-SOIC (0.295", 7.50mm Width)
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 4
Interface: Logic
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 45mOhm
Input Type: Non-Inverting
Voltage - Load: 4.5V ~ 28V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 3.4A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-DSO-28
Fault Protection: Current Limiting (Adjustable), Over Load, Over Temperature, Reverse Battery, Reverse Current, UVLO
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59+8.65 EUR
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IPI60R380C6 IPI60R380C6 Infineon Technologies INFN-S-A0004583381-1.pdf?t.download=true&u=5oefqw Description: COOLMOS N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10.6A (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 3.8A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 320µA
Supplier Device Package: PG-TO262-3-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 100 V
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IPP60R380C6 Infineon Technologies INFN-S-A0004583381-1.pdf?t.download=true&u=5oefqw Description: POWER FIELD-EFFECT TRANSISTOR, 1
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10.6A (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 3.8A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 320µA
Supplier Device Package: PG-TO220-3-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 100 V
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PX7510LWAFERX6SA1 Infineon Technologies Description: IC CONTROLLER
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SIPC06S2N06LATX2LA1 Infineon Technologies Description: TRANSISTOR N-CH
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SIPC10S2N06LX2LA1 Infineon Technologies Description: TRANSISTOR N-CH
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SIPC20S2N06LX6SA1 Infineon Technologies Description: MOSFET N-CH TO263
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BSS138IXTSA1 BSS138IXTSA1 Infineon Technologies Infineon-BSS138I-DataSheet-v02_01-EN.pdf?fileId=5546d46277921c320177a421e00e1d4c Description: SMALL SIGNAL MOSFETS PG-SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 230mA (Ta)
Rds On (Max) @ Id, Vgs: 3.5Ohm @ 230mA, 10V
Power Dissipation (Max): 360mW (Ta)
Vgs(th) (Max) @ Id: 1.4V @ 26µA
Supplier Device Package: PG-SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 32 pF @ 25 V
auf Bestellung 21000 Stücke:
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3000+0.079 EUR
6000+0.071 EUR
9000+0.067 EUR
15000+0.062 EUR
21000+0.059 EUR
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BSS138IXTSA1 BSS138IXTSA1 Infineon Technologies Infineon-BSS138I-DataSheet-v02_01-EN.pdf?fileId=5546d46277921c320177a421e00e1d4c Description: SMALL SIGNAL MOSFETS PG-SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 230mA (Ta)
Rds On (Max) @ Id, Vgs: 3.5Ohm @ 230mA, 10V
Power Dissipation (Max): 360mW (Ta)
Vgs(th) (Max) @ Id: 1.4V @ 26µA
Supplier Device Package: PG-SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 32 pF @ 25 V
auf Bestellung 21776 Stücke:
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46+0.39 EUR
73+0.24 EUR
117+0.15 EUR
500+0.11 EUR
1000+0.098 EUR
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IFX27001TFV18 INFN-S-A0004846925-1.pdf?t.download=true&u=5oefqw
IFX27001TFV18
Hersteller: Infineon Technologies
Description: IC REG LINEAR FIXED LDO REG
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IFX27001TFV26 INFN-S-A0004846925-1.pdf?t.download=true&u=5oefqw
IFX27001TFV26
Hersteller: Infineon Technologies
Description: IC REG LINEAR FIXED LDO REG
auf Bestellung 5981 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
776+0.66 EUR
Mindestbestellmenge: 776
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TDA21325XUMA1
Hersteller: Infineon Technologies
Description: IC CONTROLLER
Produkt ist nicht verfügbar
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TLE9855QXXUMA2 Infineon-TLE9855QX-DS-DataSheet-v01_00-EN.pdf?fileId=5546d462689a790c0169104901f03e18
TLE9855QXXUMA2
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 96KB FLASH 48VQFN
Packaging: Tape & Reel (TR)
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 40MHz
Program Memory Size: 96KB (96K x 8)
RAM Size: 4K x 8
Operating Temperature: -40°C ~ 150°C (TJ)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 4K x 8
Core Processor: ARM® Cortex®-M0
Data Converters: A/D 9x8b, 12x10b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 5.5V ~ 28V
Connectivity: LINbus, SSC, UART/USART
Peripherals: Brown-out Detect/Reset, DMA, POR, PWM, WDT
Supplier Device Package: PG-VQFN-48-31
Part Status: Active
Number of I/O: 10
DigiKey Programmable: Not Verified
Grade: Automotive
Qualification: AEC-Q100
Produkt ist nicht verfügbar
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IPP086N10N3 Infineon-IPP086N10N3G-DS-v02_06-en.pdf?fileId=db3a30431ce5fb52011d1ac5c8fa1358
IPP086N10N3
Hersteller: Infineon Technologies
Description: N-CHANNEL POWER MOSFET
Produkt ist nicht verfügbar
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IPP086N10N3G INFNS30358-1.pdf?t.download=true&u=5oefqw
IPP086N10N3G
Hersteller: Infineon Technologies
Description: POWER FIELD-EFFECT TRANSISTOR, 8
Produkt ist nicht verfügbar
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ETD630N18P60HPSA1 Infineon-ETT630N18P60-DataSheet-v03_01-EN.pdf?fileId=5546d46278d64ffd017931ecaa3c3c8f
ETD630N18P60HPSA1
Hersteller: Infineon Technologies
Description: 60 MM THYRISTOR/DIODE MODULE
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: 135°C (TJ)
Structure: Series Connection - SCR/Diode
Current - Hold (Ih) (Max): 300 mA
Current - Gate Trigger (Igt) (Max): 250 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 16800A, 20000A
Number of SCRs, Diodes: 1 SCR, 1 Diode
Current - On State (It (AV)) (Max): 628 A
Voltage - Gate Trigger (Vgt) (Max): 2 V
Part Status: Active
Current - On State (It (RMS)) (Max): 700 A
Voltage - Off State: 1.8 kV
auf Bestellung 4 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+399.54 EUR
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ETT630N18P60HPSA1 Infineon-ETT630N18P60-DataSheet-v03_01-EN.pdf?fileId=5546d46278d64ffd017931ecaa3c3c8f
ETT630N18P60HPSA1
Hersteller: Infineon Technologies
Description: 60 MM THYRISTOR/THYRISTOR MODULE
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: 135°C (TJ)
Structure: Series Connection - All SCRs
Current - Hold (Ih) (Max): 300 mA
Current - Gate Trigger (Igt) (Max): 250 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 16800A, 20000A
Number of SCRs, Diodes: 2 SCRs
Current - On State (It (AV)) (Max): 628 A
Voltage - Gate Trigger (Vgt) (Max): 2 V
Part Status: Active
Current - On State (It (RMS)) (Max): 700 A
Voltage - Off State: 1.8 kV
auf Bestellung 2 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+410.75 EUR
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TLE4941CNBAMA1 Infineon-TLE4941C-DS-v03_00-en.pdf?fileId=db3a30433899edae0138c3cd41cd0334
Hersteller: Infineon Technologies
Description: MAGNETIC SWITCH HALL EFFECT SENS
Produkt ist nicht verfügbar
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TLE4941CN Infineon-TLE4941C-DS-v03_00-en.pdf?fileId=db3a30433899edae0138c3cd41cd0334
Hersteller: Infineon Technologies
Description: MAGNETIC SWITCH HALL EFFECT SENS
Packaging: Bulk
Package / Case: 2-SIP, SSO-2-53
Output Type: Current Source
Polarization: North Pole, South Pole
Mounting Type: Through Hole
Function: Special Purpose
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 4.5V ~ 20V
Technology: Hall Effect
Current - Supply (Max): 16.8mA
Supplier Device Package: PG-SSO-2-53
Part Status: Active
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
212+2.5 EUR
Mindestbestellmenge: 212
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BAW56E6433 INFNS11183-1.pdf?t.download=true&u=5oefqw
BAW56E6433
Hersteller: Infineon Technologies
Description: DIODE ARRAY GP 80V 200MA PGSOT23
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 200mA (DC)
Supplier Device Package: PG-SOT23
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 150 nA @ 70 V
auf Bestellung 96828 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
8955+0.046 EUR
Mindestbestellmenge: 8955
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TLE4476DATMA1 Infineon-TLE4476D-DS-v02_50-EN.pdf?fileId=5546d46258fc0bc1015969d22e8e41b9
TLE4476DATMA1
Hersteller: Infineon Technologies
Description: IC REG LINEAR 3.3V/5V TO252-5-11
Packaging: Tape & Reel (TR)
Package / Case: TO-252-5, DPak (4 Leads + Tab), TO-252AD
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 350mA, 430mA
Operating Temperature: -40°C ~ 170°C
Output Configuration: Positive
Current - Quiescent (Iq): 150 µA
Voltage - Input (Max): 42V
Number of Regulators: 2
Supplier Device Package: PG-TO252-5-11
Voltage - Output (Min/Fixed): 3.3V, 5V
Control Features: Enable
Part Status: Active
PSRR: 60dB (20Hz ~ 20kHz), 60dB (20Hz ~ 20kHz)
Voltage Dropout (Max): -, 0.7V @ 330mA
Protection Features: Over Current, Over Temperature, Over Voltage, Reverse Polarity, Short Circuit
Current - Supply (Max): 13 mA
Grade: Automotive
Qualification: AEC-Q100
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2500+2.09 EUR
Mindestbestellmenge: 2500
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BSC019N04NSG
Hersteller: Infineon Technologies
Description: BSC019N04 - 12V-300V N-CHANNEL P
Produkt ist nicht verfügbar
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IDB06S60CATMA2 IDB06S60C.pdf
IDB06S60CATMA2
Hersteller: Infineon Technologies
Description: DIODE SIL CARB 600V 6A TO263-3-2
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 280pF @ 1V, 1MHz
Current - Average Rectified (Io): 6A
Supplier Device Package: PG-TO263-3-2
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 6 A
Current - Reverse Leakage @ Vr: 80 µA @ 600 V
Produkt ist nicht verfügbar
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SFH 757V SFH757(V).pdf
Hersteller: Infineon Technologies
Description: TRANSMITTER DIODE FIBER OPTIC
Produkt ist nicht verfügbar
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IPW60R041C6 INFNS16356-1.pdf?t.download=true&u=5oefqw
IPW60R041C6
Hersteller: Infineon Technologies
Description: 600V, 0.041OHM, N-CHANNEL MOSFET
Produkt ist nicht verfügbar
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IPW65R045C7 INFNS27212-1.pdf?t.download=true&u=5oefqw
IPW65R045C7
Hersteller: Infineon Technologies
Description: 46A, 650V, 0.045OHM, N-CHANNEL M
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 46A (Tc)
Rds On (Max) @ Id, Vgs: 45mOhm @ 24.9A, 10V
Power Dissipation (Max): 227W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1.25mA
Supplier Device Package: PG-TO247-3-41
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 93 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4340 pF @ 400 V
Produkt ist nicht verfügbar
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BSS139IXTSA1 Infineon-BSS139I-DataSheet-v02_01-EN.pdf?fileId=5546d46277921c320177a421f99f1d4f
BSS139IXTSA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 250V 100MA SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel, Depletion Mode
Current - Continuous Drain (Id) @ 25°C: 100mA (Ta)
Rds On (Max) @ Id, Vgs: 14Ohm @ 100mA, 10V
Power Dissipation (Max): 360mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 56µA
Supplier Device Package: PG-SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 0V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 2.3 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 60 pF @ 25 V
Produkt ist nicht verfügbar
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BSS139IXTSA1 Infineon-BSS139I-DataSheet-v02_01-EN.pdf?fileId=5546d46277921c320177a421f99f1d4f
BSS139IXTSA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 250V 100MA SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel, Depletion Mode
Current - Continuous Drain (Id) @ 25°C: 100mA (Ta)
Rds On (Max) @ Id, Vgs: 14Ohm @ 100mA, 10V
Power Dissipation (Max): 360mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 56µA
Supplier Device Package: PG-SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 0V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 2.3 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 60 pF @ 25 V
auf Bestellung 69 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
28+0.65 EUR
45+0.39 EUR
Mindestbestellmenge: 28
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IRF6217TRPBF-1 IRF6217PbF-1.pdf
IRF6217TRPBF-1
Hersteller: Infineon Technologies
Description: MOSFET P-CH 150V 700MA 8SO
Produkt ist nicht verfügbar
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XC2268N40F80LABKXUMA1 XC226xN.pdf
XC2268N40F80LABKXUMA1
Hersteller: Infineon Technologies
Description: IC MCU 16/32B 320KB FLSH 100LQFP
Produkt ist nicht verfügbar
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BCR583E6327 INFNS10861-1.pdf?t.download=true&u=5oefqw
BCR583E6327
Hersteller: Infineon Technologies
Description: TRANS PREBIAS PNP 50V SOT23-3
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 50mA, 5V
Supplier Device Package: PG-SOT23-3-1
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 330 mW
Frequency - Transition: 150 MHz
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 839042 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4418+0.11 EUR
Mindestbestellmenge: 4418
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BCR583 INFNS17205-1.pdf?t.download=true&u=5oefqw
BCR583
Hersteller: Infineon Technologies
Description: TRANS PREBIAS
Packaging: Bulk
auf Bestellung 954990 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4418+0.11 EUR
Mindestbestellmenge: 4418
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BSS123IXTSA1 Infineon-BSS123I-DataSheet-v02_00-EN.pdf?fileId=5546d46277921c320177a421ae8a1d46
BSS123IXTSA1
Hersteller: Infineon Technologies
Description: SMALL SIGNAL MOSFETS PG-SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 190mA (Ta)
Rds On (Max) @ Id, Vgs: 6Ohm @ 190mA, 10V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 1.8V @ 13µA
Supplier Device Package: PG-SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 0.63 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 15 pF @ 50 V
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.069 EUR
6000+0.061 EUR
Mindestbestellmenge: 3000
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BSS123IXTSA1 Infineon-BSS123I-DataSheet-v02_00-EN.pdf?fileId=5546d46277921c320177a421ae8a1d46
BSS123IXTSA1
Hersteller: Infineon Technologies
Description: SMALL SIGNAL MOSFETS PG-SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 190mA (Ta)
Rds On (Max) @ Id, Vgs: 6Ohm @ 190mA, 10V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 1.8V @ 13µA
Supplier Device Package: PG-SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 0.63 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 15 pF @ 50 V
auf Bestellung 7710 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
50+0.35 EUR
83+0.21 EUR
133+0.13 EUR
500+0.097 EUR
1000+0.086 EUR
Mindestbestellmenge: 50
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T880N14TOFXPSA1 Infineon-T880N-DS-v01_00-en_de.pdf?fileId=db3a304323b87bc20123ffb85bf75bf8
T880N14TOFXPSA1
Hersteller: Infineon Technologies
Description: SCR MODULE 1800V 1.75A DO200AB
Produkt ist nicht verfügbar
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TLE94108ESXUMA1 Infineon-TLE94108ES-DataSheet-v01_00-EN.pdf?fileId=5546d462773f932401774376fc474287
TLE94108ESXUMA1
Hersteller: Infineon Technologies
Description: IC HALF BRIDGE DRIVER 24TSDSO
Packaging: Tape & Reel (TR)
Features: Charge Pump
Package / Case: 24-TSSOP (0.154", 3.90mm Width) Exposed Pad
Mounting Type: Surface Mount
Interface: Logic, PWM, SPI
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge (8)
Voltage - Supply: 3V ~ 5.5V
Rds On (Typ): 1.3Ohm LS, 1.3Ohm HS
Applications: DC Motors, General Purpose
Voltage - Load: 5.5V ~ 20V
Supplier Device Package: PG-TSDSO-24
Fault Protection: Current Limiting, Over Temperature, Short Circuit
Load Type: Inductive, Resistive
Part Status: Active
Produkt ist nicht verfügbar
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TLE94108ESXUMA1 Infineon-TLE94108ES-DataSheet-v01_00-EN.pdf?fileId=5546d462773f932401774376fc474287
TLE94108ESXUMA1
Hersteller: Infineon Technologies
Description: IC HALF BRIDGE DRIVER 24TSDSO
Packaging: Cut Tape (CT)
Features: Charge Pump
Package / Case: 24-TSSOP (0.154", 3.90mm Width) Exposed Pad
Mounting Type: Surface Mount
Interface: Logic, PWM, SPI
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge (8)
Voltage - Supply: 3V ~ 5.5V
Rds On (Typ): 1.3Ohm LS, 1.3Ohm HS
Applications: DC Motors, General Purpose
Voltage - Load: 5.5V ~ 20V
Supplier Device Package: PG-TSDSO-24
Fault Protection: Current Limiting, Over Temperature, Short Circuit
Load Type: Inductive, Resistive
Part Status: Active
auf Bestellung 2498 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5+4.17 EUR
10+3.1 EUR
25+2.84 EUR
100+2.55 EUR
250+2.41 EUR
500+2.33 EUR
1000+2.26 EUR
Mindestbestellmenge: 5
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IAUC41N06S5L100ATMA1 Infineon-IAUC41N06S5L100-DataSheet-v01_00-EN.pdf?fileId=5546d46271bf4f920171f45f332861ae
IAUC41N06S5L100ATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 60V 41A TDSON-8-33
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 41A (Tj)
Rds On (Max) @ Id, Vgs: 10mOhm @ 20A, 10V
Power Dissipation (Max): 42W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 13µA
Supplier Device Package: PG-TDSON-8-33
Part Status: Active
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 16.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1205 pF @ 30 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 13488 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
9+1.97 EUR
15+1.24 EUR
100+0.82 EUR
500+0.64 EUR
1000+0.58 EUR
2000+0.54 EUR
Mindestbestellmenge: 9
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BCW61E6384HTMA1 fundamentals-of-power-semiconductors
Hersteller: Infineon Technologies
Description: TRANSISTOR AF SOT23
Packaging: Bulk
Part Status: Last Time Buy
auf Bestellung 810000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
8955+0.045 EUR
Mindestbestellmenge: 8955
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MB89485-G-218-CHIP-CN
Hersteller: Infineon Technologies
Description: IC MCU 8BIT 16KB MROM
Packaging: Tray
Speed: 12.5MHz
Program Memory Size: 16KB (16K x 8)
RAM Size: 512 x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External
Program Memory Type: Mask ROM
Core Processor: F²MC-8L
Data Converters: A/D 4x10b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 2.2V ~ 5.5V
Connectivity: Serial I/O, UART/USART
Peripherals: LCD, POR, PWM, WDT
Part Status: Obsolete
Number of I/O: 39
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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MB89983L-G-218-CHIP
Hersteller: Infineon Technologies
Description: IC MCU 8BIT 8KB MROM
Packaging: Tray
Speed: 4.2MHz
Program Memory Size: 8KB (8K x 8)
RAM Size: 256 x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External
Program Memory Type: Mask ROM
Core Processor: F²MC-8L
Data Converters: A/D 4x8b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 2.2V ~ 6V
Peripherals: LCD, POR, PWM, WDT
Part Status: Obsolete
Number of I/O: 47
Produkt ist nicht verfügbar
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BAT5404WH6327XTSA1 INFNS15399-1.pdf?t.download=true&u=5oefqw
BAT5404WH6327XTSA1
Hersteller: Infineon Technologies
Description: DIODE ARR SCHOT 30V 200MA SOT323
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 5 ns
Technology: Schottky
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 200mA (DC)
Supplier Device Package: PG-SOT323
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 100 mA
Current - Reverse Leakage @ Vr: 2 µA @ 25 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 33512 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
36+0.49 EUR
60+0.3 EUR
100+0.19 EUR
500+0.14 EUR
1000+0.12 EUR
Mindestbestellmenge: 36
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BAT5402LRHE6327XTSA1 INFNS15399-1.pdf?t.download=true&u=5oefqw
BAT5402LRHE6327XTSA1
Hersteller: Infineon Technologies
Description: DIODE SCHOTT 30V 200MA TSLP-2-7
Packaging: Cut Tape (CT)
Package / Case: SOD-882
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 5 ns
Technology: Schottky
Capacitance @ Vr, F: 10pF @ 1V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: PG-TSLP-2-7
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 100 mA
Current - Reverse Leakage @ Vr: 2 µA @ 25 V
auf Bestellung 8935 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
24+0.74 EUR
31+0.57 EUR
100+0.34 EUR
500+0.32 EUR
1000+0.22 EUR
2000+0.2 EUR
5000+0.19 EUR
Mindestbestellmenge: 24
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FD500R65KE3KNOSA1 Infineon-FD500R65KE3_K-DS-v03_00-en_de.pdf?fileId=db3a30432cd42ee3012cea107abc562f
FD500R65KE3KNOSA1
Hersteller: Infineon Technologies
Description: IGBT MOD 6500V 500A 9600W
Produkt ist nicht verfügbar
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BAR6702VH6327XTSA1 Infineon-BAR67-02V-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c7e7124d1017efcc0e8f30749
BAR6702VH6327XTSA1
Hersteller: Infineon Technologies
Description: RF DIODE PIN 150V 250MW SC79-2
Packaging: Cut Tape (CT)
Package / Case: SC-79, SOD-523
Diode Type: PIN - Single
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 0.55pF @ 5V, 1MHz
Resistance @ If, F: 1Ohm @ 10mA, 100MHz
Voltage - Peak Reverse (Max): 150V
Supplier Device Package: PG-SC79-2
Part Status: Active
Current - Max: 200 mA
Power Dissipation (Max): 250 mW
auf Bestellung 10146 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
44+0.4 EUR
64+0.28 EUR
72+0.24 EUR
100+0.21 EUR
250+0.19 EUR
500+0.18 EUR
Mindestbestellmenge: 44
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BAR65-03WE6327 INFNS15696-1.pdf?t.download=true&u=5oefqw
BAR65-03WE6327
Hersteller: Infineon Technologies
Description: BAR65 - PIN DIODE
Packaging: Bulk
Package / Case: SC-76, SOD-323
Diode Type: PIN - Single
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 0.8pF @ 3V, 1MHz
Resistance @ If, F: 900mOhm @ 10mA, 100MHz
Voltage - Peak Reverse (Max): 30V
Supplier Device Package: PG-SOD323-2-1
Part Status: Active
Current - Max: 100 mA
Power Dissipation (Max): 250 mW
Produkt ist nicht verfügbar
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CY24212KSXC-5
CY24212KSXC-5
Hersteller: Infineon Technologies
Description: IC CLOCK GEN MPEG 8-SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Frequency - Max: 27.027MHz
Type: Clock Generator
Voltage - Supply: 3.135V ~ 3.465V
Supplier Device Package: 8-SOIC
DigiKey Programmable: Not Verified
auf Bestellung 6034 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
193+2.61 EUR
Mindestbestellmenge: 193
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SPD03N50C3ATMA1 Infineon-SPD03N50C3-DS-v02_06-en.pdf?fileId=db3a30433f12d084013f144a43c7038b
SPD03N50C3ATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 500V 3.2A TO252-3
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.2A (Tc)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 2A, 10V
Power Dissipation (Max): 38W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 135µA
Supplier Device Package: PG-TO252-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 25 V
auf Bestellung 112475 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
360+1.26 EUR
Mindestbestellmenge: 360
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SIPC03N50C3X1SA1
Hersteller: Infineon Technologies
Description: TRANSISTOR N-CH
Produkt ist nicht verfügbar
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SPD03N50C3BTMA1 Infineon-SPD03N50C3-DS-v02_06-en.pdf?fileId=db3a30433f12d084013f144a43c7038b
SPD03N50C3BTMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 560V 3.2A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.2A (Tc)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 2A, 10V
Power Dissipation (Max): 38W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 135µA
Supplier Device Package: PG-TO252-3-11
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 560 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 25 V
Produkt ist nicht verfügbar
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TDA16822XK TDA16822.pdf
TDA16822XK
Hersteller: Infineon Technologies
Description: IC OFFLINE SWITCH FLYBACK 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -25°C ~ 130°C (TJ)
Duty Cycle: 72%
Frequency - Switching: 100kHz
Internal Switch(s): Yes
Voltage - Breakdown: 650V
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 9V ~ 17V
Supplier Device Package: PG-DIP-8
Fault Protection: Current Limiting, Open Loop, Over Load, Over Temperature, Over Voltage
Voltage - Start Up: 14 V
Control Features: Soft Start
Part Status: Discontinued at Digi-Key
Power (Watts): 20 W
Produkt ist nicht verfügbar
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TC1766192F80HLBDKXUMA2 Infineon-TC1766-DS-v01_00-en.pdf?folderId=db3a304412b407950112b409ae7c0343&fileId=db3a304313553140011368a9b40e0224&ack=t
TC1766192F80HLBDKXUMA2
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 1.5MB FLASH 176LQFP
Packaging: Tape & Reel (TR)
Package / Case: 176-LQFP
Mounting Type: Surface Mount
Speed: 80MHz
Program Memory Size: 1.5MB (1.5M x 8)
RAM Size: 108K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
Core Processor: TriCore™
Data Converters: A/D 2x10b, 32x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.42V ~ 1.58V
Connectivity: ASC, CANbus, MLI, MSC, SSC
Peripherals: DMA, POR, WDT
Supplier Device Package: PG-LQFP-176-5
Part Status: Obsolete
Number of I/O: 81
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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BTS426L1E3062ABUMA1 BTS426L1.pdf
BTS426L1E3062ABUMA1
Hersteller: Infineon Technologies
Description: IC PWR SWITCH N-CHAN 1:1 TO263-5
Packaging: Tape & Reel (TR)
Features: Auto Restart
Package / Case: TO-263-5, D2PAK (4 Leads + Tab), TO-263BB
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 50mOhm
Input Type: Non-Inverting
Voltage - Load: 5V ~ 34V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 5.8A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-TO263-5-2
Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, Over Voltage, UVLO
Part Status: Not For New Designs
Produkt ist nicht verfügbar
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IPTG011N08NM5ATMA1 Infineon-IPTG011N08NM5-DataSheet-v02_00-EN.pdf?fileId=5546d46277921c320177aa3f5c9e7d54
IPTG011N08NM5ATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 80V 42A/408A HSOG-8
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSMD, Gull Wing
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 42A (Ta), 408A (Tc)
Rds On (Max) @ Id, Vgs: 1.1mOhm @ 150A, 10V
Power Dissipation (Max): 3.8W (Ta), 375W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 280µA
Supplier Device Package: PG-HSOG-8-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 223 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 17000 pF @ 40 V
Produkt ist nicht verfügbar
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IPTG011N08NM5ATMA1 Infineon-IPTG011N08NM5-DataSheet-v02_00-EN.pdf?fileId=5546d46277921c320177aa3f5c9e7d54
IPTG011N08NM5ATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 80V 42A/408A HSOG-8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSMD, Gull Wing
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 42A (Ta), 408A (Tc)
Rds On (Max) @ Id, Vgs: 1.1mOhm @ 150A, 10V
Power Dissipation (Max): 3.8W (Ta), 375W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 280µA
Supplier Device Package: PG-HSOG-8-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 223 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 17000 pF @ 40 V
auf Bestellung 1144 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+8.54 EUR
10+5.7 EUR
100+4.09 EUR
500+3.98 EUR
Mindestbestellmenge: 3
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1ED3124MU12HXUMA1 Infineon-1ED31xxMU12H-DataSheet-v02_00-EN.pdf?fileId=5546d46274cf54d50174d97c37be1f67
1ED3124MU12HXUMA1
Hersteller: Infineon Technologies
Description: DGT ISO 1.2KV 1CH GT DVR DSO8-66
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Current - Peak Output: 14A
Technology: Magnetic Coupling
Current - Output High, Low: 5.5A, 5.5A
Voltage - Isolation: 1200Vrms
Approval Agency: UL
Supplier Device Package: PG-DSO-8-66
Rise / Fall Time (Typ): 15ns, 15ns
Common Mode Transient Immunity (Min): 200kV/µs
Part Status: Active
Number of Channels: 1
Voltage - Output Supply: 10V ~ 35V
Produkt ist nicht verfügbar
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1ED3124MU12HXUMA1 Infineon-1ED31xxMU12H-DataSheet-v02_00-EN.pdf?fileId=5546d46274cf54d50174d97c37be1f67
1ED3124MU12HXUMA1
Hersteller: Infineon Technologies
Description: DGT ISO 1.2KV 1CH GT DVR DSO8-66
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Current - Peak Output: 14A
Technology: Magnetic Coupling
Current - Output High, Low: 5.5A, 5.5A
Voltage - Isolation: 1200Vrms
Approval Agency: UL
Supplier Device Package: PG-DSO-8-66
Rise / Fall Time (Typ): 15ns, 15ns
Common Mode Transient Immunity (Min): 200kV/µs
Part Status: Active
Number of Channels: 1
Voltage - Output Supply: 10V ~ 35V
auf Bestellung 214 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
6+3.4 EUR
10+2.53 EUR
25+2.3 EUR
100+2.06 EUR
Mindestbestellmenge: 6
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1ED3491MU12MXUMA1 infineon-1ed34x1mx12m-datasheet-en.pdf
1ED3491MU12MXUMA1
Hersteller: Infineon Technologies
Description: DIGITAL ISO 1CH GT DVR DSO16-28
Packaging: Tape & Reel (TR)
Package / Case: 16-BSSOP (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Current - Peak Output: 9A
Technology: Magnetic Coupling
Approval Agency: UL, VDE
Supplier Device Package: PG-DSO-16-28
Rise / Fall Time (Typ): 15ns, 15ns
Part Status: Active
Number of Channels: 1
Voltage - Output Supply: 13V ~ 25V
auf Bestellung 4000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1000+4.81 EUR
2000+4.7 EUR
3000+4.65 EUR
Mindestbestellmenge: 1000
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1ED3491MU12MXUMA1 infineon-1ed34x1mx12m-datasheet-en.pdf
1ED3491MU12MXUMA1
Hersteller: Infineon Technologies
Description: DIGITAL ISO 1CH GT DVR DSO16-28
Packaging: Cut Tape (CT)
Package / Case: 16-BSSOP (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Current - Peak Output: 9A
Technology: Magnetic Coupling
Approval Agency: UL, VDE
Supplier Device Package: PG-DSO-16-28
Rise / Fall Time (Typ): 15ns, 15ns
Part Status: Active
Number of Channels: 1
Voltage - Output Supply: 13V ~ 25V
auf Bestellung 5006 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+8.34 EUR
10+6.38 EUR
25+5.89 EUR
100+5.35 EUR
250+5.09 EUR
500+4.94 EUR
Mindestbestellmenge: 3
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IDD05SG60CXTMA2 Infineon-IDD05SG60C-DS-v02_04-en.pdf?folderId=5546d4694909da4801490a07012f053b&fileId=db3a304327b897500127dd2fc4391a74
IDD05SG60CXTMA2
Hersteller: Infineon Technologies
Description: DIODE SIL CARB 600V 5A PGTO2523
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 110pF @ 1V, 1MHz
Current - Average Rectified (Io): 5A
Supplier Device Package: PG-TO252-3
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Last Time Buy
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.3 V @ 5 A
Current - Reverse Leakage @ Vr: 30 µA @ 600 V
Produkt ist nicht verfügbar
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BTS5434G INFNS05956-1.pdf?t.download=true&u=5oefqw
BTS5434G
Hersteller: Infineon Technologies
Description: IC PWR SWITCH N-CHAN 1:1
Packaging: Bulk
Features: Slew Rate Controlled
Package / Case: 28-SOIC (0.295", 7.50mm Width)
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 4
Interface: Logic
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 45mOhm
Input Type: Non-Inverting
Voltage - Load: 4.5V ~ 28V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 3.4A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-DSO-28
Fault Protection: Current Limiting (Adjustable), Over Load, Over Temperature, Reverse Battery, Reverse Current, UVLO
auf Bestellung 52000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
59+8.65 EUR
Mindestbestellmenge: 59
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IPI60R380C6 INFN-S-A0004583381-1.pdf?t.download=true&u=5oefqw
IPI60R380C6
Hersteller: Infineon Technologies
Description: COOLMOS N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10.6A (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 3.8A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 320µA
Supplier Device Package: PG-TO262-3-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 100 V
Produkt ist nicht verfügbar
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IPP60R380C6 INFN-S-A0004583381-1.pdf?t.download=true&u=5oefqw
Hersteller: Infineon Technologies
Description: POWER FIELD-EFFECT TRANSISTOR, 1
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10.6A (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 3.8A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 320µA
Supplier Device Package: PG-TO220-3-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 100 V
Produkt ist nicht verfügbar
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PX7510LWAFERX6SA1
Hersteller: Infineon Technologies
Description: IC CONTROLLER
Produkt ist nicht verfügbar
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SIPC06S2N06LATX2LA1
Hersteller: Infineon Technologies
Description: TRANSISTOR N-CH
Produkt ist nicht verfügbar
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SIPC10S2N06LX2LA1
Hersteller: Infineon Technologies
Description: TRANSISTOR N-CH
Produkt ist nicht verfügbar
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SIPC20S2N06LX6SA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH TO263
Produkt ist nicht verfügbar
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BSS138IXTSA1 Infineon-BSS138I-DataSheet-v02_01-EN.pdf?fileId=5546d46277921c320177a421e00e1d4c
BSS138IXTSA1
Hersteller: Infineon Technologies
Description: SMALL SIGNAL MOSFETS PG-SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 230mA (Ta)
Rds On (Max) @ Id, Vgs: 3.5Ohm @ 230mA, 10V
Power Dissipation (Max): 360mW (Ta)
Vgs(th) (Max) @ Id: 1.4V @ 26µA
Supplier Device Package: PG-SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 32 pF @ 25 V
auf Bestellung 21000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.079 EUR
6000+0.071 EUR
9000+0.067 EUR
15000+0.062 EUR
21000+0.059 EUR
Mindestbestellmenge: 3000
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BSS138IXTSA1 Infineon-BSS138I-DataSheet-v02_01-EN.pdf?fileId=5546d46277921c320177a421e00e1d4c
BSS138IXTSA1
Hersteller: Infineon Technologies
Description: SMALL SIGNAL MOSFETS PG-SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 230mA (Ta)
Rds On (Max) @ Id, Vgs: 3.5Ohm @ 230mA, 10V
Power Dissipation (Max): 360mW (Ta)
Vgs(th) (Max) @ Id: 1.4V @ 26µA
Supplier Device Package: PG-SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 32 pF @ 25 V
auf Bestellung 21776 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
46+0.39 EUR
73+0.24 EUR
117+0.15 EUR
500+0.11 EUR
1000+0.098 EUR
Mindestbestellmenge: 46
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