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1ED3890MU12MXUMA1 1ED3890MU12MXUMA1 Infineon Technologies Infineon-1ED38x0Mc12M-DataSheet-v02_00-EN.pdf?fileId=5546d46274cf54d50174d97c260c1f5d Description: DIGITAL ISO 1CH GT DVR DSO16-28
Packaging: Tape & Reel (TR)
Package / Case: 16-BSSOP (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Current - Peak Output: 9A
Technology: Magnetic Coupling
Approval Agency: UL, VDE
Supplier Device Package: PG-DSO-16-28
Rise / Fall Time (Typ): 15ns, 15ns
Part Status: Active
Number of Channels: 1
Voltage - Output Supply: 13V ~ 25V
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1ED3830MU12MXUMA1 1ED3830MU12MXUMA1 Infineon Technologies Infineon-1ED38x0Mc12M-DataSheet-v02_00-EN.pdf?fileId=5546d46274cf54d50174d97c260c1f5d Description: DIGITAL ISO 1CH GT DVR DSO16-28
Packaging: Tape & Reel (TR)
Package / Case: 16-BSSOP (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Current - Peak Output: 3A
Technology: Magnetic Coupling
Approval Agency: UL, VDE
Supplier Device Package: PG-DSO-16-28
Rise / Fall Time (Typ): 15ns, 15ns
Part Status: Active
Number of Channels: 1
Voltage - Output Supply: 13V ~ 25V
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IPP60R120P7 Infineon Technologies Infineon-IPP60R120P7-DS-v02_00-EN.pdf?fileId=5546d4625acbae4c015acd0f0fdf074f Description: 600V, 0.12OHM, N-CHANNEL MOSFET,
Packaging: Bulk
Part Status: Active
Produkt ist nicht verfügbar
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SP001385054 SP001385054 Infineon Technologies Infineon-IPP60R120C7-DS-v02_00-EN.pdf?fileId=5546d462518ffd850151a4fa44c90ed3 Description: IPP60R120C7XKSA1 - 600V COOLMOS
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Tc)
Rds On (Max) @ Id, Vgs: 120mOhm @ 7.8A, 10V
Power Dissipation (Max): 92W (Tc)
Vgs(th) (Max) @ Id: 4V @ 390µA
Supplier Device Package: PG-TO220-3-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 400 V
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CY7C1370KV25-167AXC CY7C1370KV25-167AXC Infineon Technologies download Description: IC SRAM 18MBIT PAR 100TQFP
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Memory Size: 18Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 2.375V ~ 2.625V
Technology: SRAM - Synchronous, SDR
Clock Frequency: 167 MHz
Memory Format: SRAM
Supplier Device Package: 100-TQFP (14x20)
Memory Interface: Parallel
Access Time: 3.4 ns
Memory Organization: 512K x 36
DigiKey Programmable: Not Verified
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FXE167F96F66LACXP FXE167F96F66LACXP Infineon Technologies INFNS12557-1.pdf?t.download=true&u=5oefqw Description: IC MCU 16BIT 768KB FLASH 144LQFP
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SAF-XE167K-48F66LAC SAF-XE167K-48F66LAC Infineon Technologies INFNS12557-1.pdf?t.download=true&u=5oefqw Description: 16-BIT FLASH MICROCONTROLLER, 80
Packaging: Bulk
DigiKey Programmable: Not Verified
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SAF-XE167K-72F66LAC SAF-XE167K-72F66LAC Infineon Technologies INFNS12557-1.pdf?t.download=true&u=5oefqw Description: 16-BIT FLASH MICROCONTROLLER, 80
Packaging: Bulk
DigiKey Programmable: Not Verified
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SAF-XE167H-96F66LAC SAF-XE167H-96F66LAC Infineon Technologies INFNS12557-1.pdf?t.download=true&u=5oefqw Description: XE167 - 16-BIT FLASH RISC MICROC
Packaging: Bulk
Package / Case: 144-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 66MHz
Program Memory Size: 768KB (768K x 8)
RAM Size: 82K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: C166SV2
Data Converters: A/D 8, 16x8/10b SAR
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Connectivity: EBI/EMI, I²C, LINbus, QSPI, SPI, SSC, UART/USART, USI
Peripherals: I²S, POR, PWM, WDT
Supplier Device Package: PG-LQFP-144-4
Part Status: Active
Number of I/O: 118
DigiKey Programmable: Not Verified
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SAF-XE167F-96F80LACFXUMA1 SAF-XE167F-96F80LACFXUMA1 Infineon Technologies INFNS12557-1.pdf?t.download=true&u=5oefqw Description: 16-BIT FLASH RISC MCU
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SAFXE167F96F66LAC SAFXE167F96F66LAC Infineon Technologies INFNS12557-1.pdf?t.download=true&u=5oefqw Description: IC MCU 16BIT 768KB FLASH 144LQFP
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XE167F96F66LACFXUMA1 XE167F96F66LACFXUMA1 Infineon Technologies XE167_ds_v2.1_2008_08.pdf Description: IC MCU 16BIT 768KB FLASH 144LQFP
Packaging: Tape & Reel (TR)
Package / Case: 144-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 66MHz
Program Memory Size: 768KB (768K x 8)
RAM Size: 82K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: C166SV2
Data Converters: A/D 24x10b
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Connectivity: CANbus, EBI/EMI, I2C, LINbus, SPI, SSC, UART/USART, USI
Peripherals: I2S, POR, PWM, WDT
Supplier Device Package: PG-LQFP-144-4
Number of I/O: 118
DigiKey Programmable: Not Verified
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SAF-XE167GM-48F80L AA SAF-XE167GM-48F80L AA Infineon Technologies XE167xM.pdf Description: IC MCU 16BIT 384KB FLASH 144LQFP
Packaging: Tape & Reel (TR)
Package / Case: 144-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 80MHz
Program Memory Size: 384KB (384K x 8)
RAM Size: 34K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: C166SV2
Data Converters: A/D 16x10b
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Connectivity: CANbus, EBI/EMI, I2C, LINbus, SPI, SSC, UART/USART, USI
Peripherals: I2S, POR, PWM, WDT
Supplier Device Package: PG-LQFP-144-4
Number of I/O: 119
DigiKey Programmable: Not Verified
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SAF-XE167GM-72F80L AA SAF-XE167GM-72F80L AA Infineon Technologies XE167xM.pdf Description: IC MCU 16BIT 576KB FLASH 144LQFP
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SAF-XE167HM-48F80L AA SAF-XE167HM-48F80L AA Infineon Technologies XE167xM.pdf Description: IC MCU 16BIT 384KB FLASH 144LQFP
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EVAL1ED44176N01FTOBO1 EVAL1ED44176N01FTOBO1 Infineon Technologies Infineon-Low-side_driver-ApplicationNotes-v01_00-EN.pdf?fileId=5546d46265487f7b01655c2d8358778a Description: EVAL BOARD FOR 1ED44176N01F
Packaging: Bulk
Function: Gate Driver
Type: Power Management
Utilized IC / Part: 1ED44176N01F
Supplied Contents: Board(s)
Part Status: Active
Contents: Board(s)
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ETD480N22P60HPSA1 ETD480N22P60HPSA1 Infineon Technologies Infineon-DS_eTT480N22P60-DS-v03_01-EN.pdf?fileId=5546d46266f85d6301670d4dadb9366e Description: THYR / DIODE MODULE DK
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 135°C (TC)
Structure: Series Connection - SCR/Diode
Current - Hold (Ih) (Max): 300 mA
Current - Gate Trigger (Igt) (Max): 250 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 14700A @ 50Hz
Number of SCRs, Diodes: 1 SCR, 1 Diode
Current - On State (It (AV)) (Max): 480 A
Voltage - Gate Trigger (Vgt) (Max): 2.2 V
Current - On State (It (RMS)) (Max): 700 A
Voltage - Off State: 2.2 kV
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TC267D40F200NBCKXUMA1 TC267D40F200NBCKXUMA1 Infineon Technologies Infineon-TC26xBC-DS-v01_00-EN.pdf?fileId=5546d462694c98b40169538e06030445 Description: IC MCU 32BIT 2.5MB FLSH 292LFBGA
Packaging: Tape & Reel (TR)
Package / Case: 292-LFBGA
Mounting Type: Surface Mount
Speed: 200MHz
Program Memory Size: 2.5MB (2.5M x 8)
RAM Size: 240K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
EEPROM Size: 96K x 8
Core Processor: TriCore™
Data Converters: A/D 48x12b SAR, 3 x Sigma-Delta
Core Size: 32-Bit Dual-Core
Voltage - Supply (Vcc/Vdd): 3.3V, 5V
Connectivity: ASC, CANbus, Ethernet, FlexRay, HSSL, I2C, LINbus, MSC, PSI5, QSPI, SENT
Peripherals: DMA, WDT
Supplier Device Package: PG-LFBGA-292-6
Number of I/O: 88
DigiKey Programmable: Not Verified
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TC267D40F200NBCKXUMA1 TC267D40F200NBCKXUMA1 Infineon Technologies Infineon-TC26xBC-DS-v01_00-EN.pdf?fileId=5546d462694c98b40169538e06030445 Description: IC MCU 32BIT 2.5MB FLSH 292LFBGA
Packaging: Cut Tape (CT)
Package / Case: 292-LFBGA
Mounting Type: Surface Mount
Speed: 200MHz
Program Memory Size: 2.5MB (2.5M x 8)
RAM Size: 240K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
EEPROM Size: 96K x 8
Core Processor: TriCore™
Data Converters: A/D 48x12b SAR, 3 x Sigma-Delta
Core Size: 32-Bit Dual-Core
Voltage - Supply (Vcc/Vdd): 3.3V, 5V
Connectivity: ASC, CANbus, Ethernet, FlexRay, HSSL, I2C, LINbus, MSC, PSI5, QSPI, SENT
Peripherals: DMA, WDT
Supplier Device Package: PG-LFBGA-292-6
Number of I/O: 88
DigiKey Programmable: Not Verified
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IAUC100N04S6L025ATMA1 IAUC100N04S6L025ATMA1 Infineon Technologies Infineon-IAUC100N04S6L025-DataSheet-v01_00-EN.pdf?fileId=5546d4626afcd350016b1c9a8f861151 Description: IAUC100N04S6L025ATMA1
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 2.56mOhm @ 50A, 10V
Power Dissipation (Max): 62W (Tc)
Vgs(th) (Max) @ Id: 2V @ 24µA
Supplier Device Package: PG-TDSON-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2019 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
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IAUC100N04S6L025ATMA1 IAUC100N04S6L025ATMA1 Infineon Technologies Infineon-IAUC100N04S6L025-DataSheet-v01_00-EN.pdf?fileId=5546d4626afcd350016b1c9a8f861151 Description: IAUC100N04S6L025ATMA1
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 2.56mOhm @ 50A, 10V
Power Dissipation (Max): 62W (Tc)
Vgs(th) (Max) @ Id: 2V @ 24µA
Supplier Device Package: PG-TDSON-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2019 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
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8+2.34 EUR
12+1.49 EUR
100+1.01 EUR
500+0.80 EUR
1000+0.69 EUR
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TDB6HK165N16LOFHOSA1 Infineon Technologies Description: SCR MODULE VDRM 1600V 70A
Packaging: Bulk
Part Status: Discontinued at Digi-Key
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TDB6HK124N16RRBOSA1 TDB6HK124N16RRBOSA1 Infineon Technologies INFN-S-A0005253096-1.pdf?t.download=true&u=5oefqw Description: SCR MODULE 1.6KV 70A MODULE
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TDB6HK240N16PBOSA1 TDB6HK240N16PBOSA1 Infineon Technologies Infineon-TDB6HK240N16P-DS-v02_00-en_de.pdf?fileId=db3a3043243b5f170124ee1179a75223 Description: THYRISTOR MODULE VDRM 1600V 70A
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TDB6HK180N16RRB21BOSA1 Infineon Technologies Infineon-TDB6HK180N16RR-DS-v02_00-en_cn.pdf?fileId=db3a304340f610c201410c3f12e4330c Description: 1600VBRIDGE MODULE
Packaging: Bulk
Part Status: Active
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TDB6HK165N16LOFHOSA1 Infineon Technologies Description: SCR MODULE VDRM 1600V 70A
Packaging: Tray
Part Status: Discontinued at Digi-Key
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TDB6HK360N16P Infineon Technologies Infineon-TDB6HK360N16P-DS-v02_00-en_de.pdf?fileId=db3a3043243b5f170124ee13511f5228 Description: TDBXHK360 - BRIDGE RECTIFIER & A
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IPB034N03LGATMA1 IPB034N03LGATMA1 Infineon Technologies Infineon-IPP034N03L-DS-v02_00-en%5B1%5D.pdf?fileId=db3a304313b8b5a60113d3c9730503e7 Description: MOSFET N-CH 30V 80A D2PAK
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SPS03N60C3AKMA1 SPS03N60C3AKMA1 Infineon Technologies Description: MOSFET N-CH 650V 3.2A TO251-3-11
Packaging: Bulk
Package / Case: TO-251-3 Stub Leads, IPak
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.2A (Tc)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 2A, 10V
Power Dissipation (Max): 38W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 135µA
Supplier Device Package: PG-TO251-3-11
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 400 pF @ 25 V
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IKD03N60RFATMA1 IKD03N60RFATMA1 Infineon Technologies Infineon-IKD03N60RF-DS-v02_06-EN.pdf?fileId=db3a30433c5c92fb013c5d3978350068 Description: IGBT TRENCH/FS 600V 6.5A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 31 ns
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 2.5A
Supplier Device Package: PG-TO252-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 10ns/128ns
Switching Energy: 50µJ (on), 40µJ (off)
Test Condition: 400V, 2.5A, 68Ohm, 15V
Gate Charge: 17.1 nC
Part Status: Active
Current - Collector (Ic) (Max): 6.5 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 7.5 A
Power - Max: 53.6 W
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ILB03N60 ILB03N60 Infineon Technologies INFNS07533-1.pdf?t.download=true&u=5oefqw Description: IGBT, 4.5A, 600V, N-CHANNEL
Packaging: Bulk
Part Status: Active
Produkt ist nicht verfügbar
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ILP03N60 ILP03N60 Infineon Technologies INFNS07428-1.pdf?t.download=true&u=5oefqw Description: IGBT, 4.5A, 600V, N-CHANNEL
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Input Type: Standard
Reverse Recovery Time (trr): 250 ns
Vce(on) (Max) @ Vge, Ic: 2.9V @ 10V, 3A
Supplier Device Package: PG-TO220-3-1
Td (on/off) @ 25°C: 15ns/100ns
Switching Energy: 12µJ (on), 20µJ (off)
Test Condition: 400V, 0.8A, 60Ohm, 10V
Gate Charge: 8.5 nC
Part Status: Active
Current - Collector (Ic) (Max): 4.5 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 5.5 A
Power - Max: 27 W
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SPD03N60C3 SPD03N60C3 Infineon Technologies Infineon-SPD03N60C3-DS-v02_06-NA.pdf?fileId=db3a3043191a246301192907f3b27f4b Description: MOSFET N-CH 600V 3.2A TO252
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.2A (Tc)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 2A, 10V
Power Dissipation (Max): 38W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 135µA
Supplier Device Package: PG-TO252-3-313
Part Status: Active
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 400 pF @ 25 V
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IDL04G65C5XUMA2 IDL04G65C5XUMA2 Infineon Technologies Infineon-IDL04G65C5-DS-v02_00-en.pdf?fileId=db3a304342e8be2c0143000fb94c146a Description: DIODE SIL CARBIDE 650V 4A VSON-4
Packaging: Tape & Reel (TR)
Package / Case: 4-PowerTSFN
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 130pF @ 1V, 1MHz
Current - Average Rectified (Io): 4A
Supplier Device Package: PG-VSON-4
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 4 A
Current - Reverse Leakage @ Vr: 70 µA @ 650 V
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IDL04G65C5XUMA2 IDL04G65C5XUMA2 Infineon Technologies Infineon-IDL04G65C5-DS-v02_00-en.pdf?fileId=db3a304342e8be2c0143000fb94c146a Description: DIODE SIL CARBIDE 650V 4A VSON-4
Packaging: Cut Tape (CT)
Package / Case: 4-PowerTSFN
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 130pF @ 1V, 1MHz
Current - Average Rectified (Io): 4A
Supplier Device Package: PG-VSON-4
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 4 A
Current - Reverse Leakage @ Vr: 70 µA @ 650 V
auf Bestellung 3390 Stücke:
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IM818SCCXKMA1 IM818SCCXKMA1 Infineon Technologies Infineon-IM818-SCC-DS-v02_01-EN.pdf?fileId=5546d46265f064ff0165f9e925ca2ea1 Description: CIPOS MAXI 1200V 8A 24PWRDIP
Packaging: Tube
Package / Case: 24-PowerDIP Module (1.205", 30.60mm)
Mounting Type: Through Hole
Type: IGBT
Configuration: 3 Phase Inverter
Voltage - Isolation: 2500Vrms
Current: 8 A
Voltage: 1.2 kV
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IRF100P219AKMA1 IRF100P219AKMA1 Infineon Technologies Infineon-IRF100P219-DataSheet-v02_01-EN.pdf?fileId=5546d462602a9dc80160e20d52df4b86 Description: MOSFET N-CH 100V TO247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 203A (Tc)
Rds On (Max) @ Id, Vgs: 1.7mOhm @ 100A, 10V
Power Dissipation (Max): 3.8W (Ta), 341W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 278µA
Supplier Device Package: PG-TO247-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 210 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12020 pF @ 50 V
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IRF100P218AKMA1 IRF100P218AKMA1 Infineon Technologies Infineon-IRF100P218-DataSheet-v02_01-EN.pdf?fileId=5546d462602a9dc80160e20d3eca4b83 Description: MOSFET N-CH 100V 209A TO247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 209A (Tc)
Rds On (Max) @ Id, Vgs: 1.28mOhm @ 100A, 10V
Power Dissipation (Max): 3.8W (Ta), 556W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 278µA
Supplier Device Package: PG-TO247-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 412 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 24000 pF @ 50 V
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FP150R07N3E4 Infineon Technologies INFNS28449-1.pdf?t.download=true&u=5oefqw Description: FP150R07 - IGBT MODULE
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FP150R07N3E4_B11 Infineon Technologies INFNS28450-1.pdf?t.download=true&u=5oefqw Description: FP150R07 - IGBT MODULE
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Three Phase Bridge Rectifier
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 150A
NTC Thermistor: Yes
Supplier Device Package: AG-ECONO3
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 150 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Power - Max: 430 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 9.3 nF @ 25 V
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ESD201-B2-03LRHE6327 Infineon Technologies INFN-S-A0000325460-1.pdf?t.download=true&u=5oefqw Description: TRANS VOLTAGE SUPPRESSOR DIODE
Packaging: Bulk
Package / Case: SC-101, SOT-883
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C (TA)
Applications: General Purpose
Capacitance @ Frequency: 5pF @ 1MHz
Current - Peak Pulse (10/1000µs): 16A
Voltage - Reverse Standoff (Typ): 5.5V (Max)
Supplier Device Package: PG-TSLP-3
Bidirectional Channels: 2
Voltage - Clamping (Max) @ Ipp: 12.1V (Typ), 10.2V (Typ)
Power Line Protection: No
Part Status: Active
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STT1400N18P55XPSA1 Infineon Technologies Infineon-STT1400N18P55-DataSheet-v03_01-EN.pdf?fileId=5546d46272aa54c00172bc99a9775672 Description: THYR / DIODE MODULE DK
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65DN06B02ELEMXPSA1 65DN06B02ELEMXPSA1 Infineon Technologies Infineon-65DN06B02-DataSheet-v03_01-EN.pdf?fileId=5546d4627506bb320175079ef4d40391 Description: DIODE STD 600V 15130A BGDELEM1
Packaging: Tray
Package / Case: DO-200AC, K-PUK
Mounting Type: Clamp On
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 15130A
Supplier Device Package: BG-D-ELEM-1
Operating Temperature - Junction: 180°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 890 mV @ 8000 A
Current - Reverse Leakage @ Vr: 100 mA @ 600 V
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STT1900N18P55XPSA1 Infineon Technologies Infineon-STT1900N18P55-DataSheet-v01_00-EN.pdf?fileId=5546d46272aa54c00172bc999c30566f Description: THYR / DIODE MODULE DK
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T700N22TOFXPSA1 Infineon Technologies Infineon-T700N-DataSheet-v03_01-EN.pdf?fileId=5546d4627112d9d501712b084825402e Description: T700N22 - PHASE CONTROL THYRISTO
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T300N14TOFXPSA1 Infineon Technologies Infineon-T300N-DS-v03_01-en_de.pdf?fileId=db3a3043284aacd80128a5a8d27c0053 Description: SCR MODULE 1800V 400A DO200AA
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T300N16TOFXPSA1 Infineon Technologies Infineon-T300N-DS-v03_01-en_de.pdf?fileId=db3a3043284aacd80128a5a8d27c0053 Description: SCR MODULE 1800V 400A DO200AA
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T430N16TOFXPSA1 Infineon Technologies Infineon-T430N-DS-v03_01-en_de.pdf?fileId=db3a3043284aacd801286374f6a45325 Description: SCR MODULE 1800V 700A DO200AA
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T660N22TOFXPSA1 Infineon Technologies Infineon-T660N-DataSheet-v01_00-EN.pdf?fileId=5546d4627112d9d501712afaeacd3fe7 Description: SCR MODULE 2600V 1500A DO200AB
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T660N26TOFXPSA1 Infineon Technologies Infineon-T660N-DataSheet-v01_00-EN.pdf?fileId=5546d4627112d9d501712afaeacd3fe7 Description: SCR MODULE 2600V 1500A DO200AB
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41040324AWLXPSA1 Infineon Technologies Description: DIODE THYRISTOR
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BSO330N02KG Infineon Technologies INFNS27921-1.pdf?t.download=true&u=5oefqw Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.4W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 5.4A
Input Capacitance (Ciss) (Max) @ Vds: 730pF @ 10V
Rds On (Max) @ Id, Vgs: 30mOhm @ 6.5A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 4.9nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.2V @ 20µA
Supplier Device Package: PG-DSO-8
Part Status: Active
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1422+0.44 EUR
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IPP042N03LG IPP042N03LG Infineon Technologies INFNS16316-1.pdf?t.download=true&u=5oefqw Description: IPP042N03 - 12V-300V N-CHANNEL P
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BSC042N03LSG BSC042N03LSG Infineon Technologies INFNS27447-1.pdf?t.download=true&u=5oefqw Description: BSC042N03 - 12V-300V N-CHANNEL P
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IPP120N10S403AKSA1 IPP120N10S403AKSA1 Infineon Technologies IPP_B_I120N10S4-03-Data-Sheet-10-Infineon.pdf?fileId=5546d46147a9c2e401480c5c81580b3a Description: MOSFET N-CH 100V 120A TO220-3
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 3.9mOhm @ 100A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 180µA
Supplier Device Package: PG-TO220-3-1
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 140 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10120 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 28968 Stücke:
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108+4.55 EUR
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IAUZ30N10S5L240ATMA1 IAUZ30N10S5L240ATMA1 Infineon Technologies Infineon-IAUZ30N10S5L240-DataSheet-v01_00-EN.pdf?fileId=5546d4626c1f3dc3016c8a62a9610dd8 Description: MOSFET N-CH 100V 30A 8TSDSON-32
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 24mOhm @ 15A, 10V
Power Dissipation (Max): 45.5W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 15µA
Supplier Device Package: PG-TSDSON-8-32
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 832 pF @ 50 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 6469 Stücke:
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8+2.36 EUR
12+1.49 EUR
100+0.99 EUR
500+0.78 EUR
1000+0.71 EUR
2000+0.65 EUR
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FP50R07U1E4BPSA1 FP50R07U1E4BPSA1 Infineon Technologies FP50R07U1E4.pdf Description: IGBT MODULE 650V 75A 230W
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 50A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Part Status: Obsolete
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Power - Max: 230 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 3.1 nF @ 25 V
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6+89.77 EUR
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FF150R17ME3GBOSA1 FF150R17ME3GBOSA1 Infineon Technologies Infineon-FF150R17ME3G-DS-v02_01-en_de.pdf?fileId=db3a30431441fb5d0114502cbb65039c Description: IGBT MOD 1700V 240A 1050W
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: 2 Independent
Operating Temperature: -40°C ~ 125°C
Vce(on) (Max) @ Vge, Ic: 2.45V @ 15V, 150A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 240 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Power - Max: 1050 W
Current - Collector Cutoff (Max): 3 mA
Input Capacitance (Cies) @ Vce: 13.5 nF @ 25 V
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3+206.40 EUR
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FD150R12RT4HOSA1 FD150R12RT4HOSA1 Infineon Technologies Infineon-FD150R12RT4-DS-v02_03-en_de.pdf?fileId=db3a3043271faefd01279a5e45e041b2 Description: FD150R12 - IGBT MODULE
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6+89.63 EUR
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DF150R12RT4HOSA1 DF150R12RT4HOSA1 Infineon Technologies Infineon-DF150R12RT4-DS-v02_02-en_de.pdf?fileId=db3a304327b89750012805d5d8646118 Description: IGBT MOD 1200V 150A 790W
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single Chopper
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 150A
NTC Thermistor: No
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 150 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 790 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 9.3 nF @ 25 V
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4+146.24 EUR
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1ED3890MU12MXUMA1 Infineon-1ED38x0Mc12M-DataSheet-v02_00-EN.pdf?fileId=5546d46274cf54d50174d97c260c1f5d
1ED3890MU12MXUMA1
Hersteller: Infineon Technologies
Description: DIGITAL ISO 1CH GT DVR DSO16-28
Packaging: Tape & Reel (TR)
Package / Case: 16-BSSOP (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Current - Peak Output: 9A
Technology: Magnetic Coupling
Approval Agency: UL, VDE
Supplier Device Package: PG-DSO-16-28
Rise / Fall Time (Typ): 15ns, 15ns
Part Status: Active
Number of Channels: 1
Voltage - Output Supply: 13V ~ 25V
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1ED3830MU12MXUMA1 Infineon-1ED38x0Mc12M-DataSheet-v02_00-EN.pdf?fileId=5546d46274cf54d50174d97c260c1f5d
1ED3830MU12MXUMA1
Hersteller: Infineon Technologies
Description: DIGITAL ISO 1CH GT DVR DSO16-28
Packaging: Tape & Reel (TR)
Package / Case: 16-BSSOP (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Current - Peak Output: 3A
Technology: Magnetic Coupling
Approval Agency: UL, VDE
Supplier Device Package: PG-DSO-16-28
Rise / Fall Time (Typ): 15ns, 15ns
Part Status: Active
Number of Channels: 1
Voltage - Output Supply: 13V ~ 25V
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IPP60R120P7 Infineon-IPP60R120P7-DS-v02_00-EN.pdf?fileId=5546d4625acbae4c015acd0f0fdf074f
Hersteller: Infineon Technologies
Description: 600V, 0.12OHM, N-CHANNEL MOSFET,
Packaging: Bulk
Part Status: Active
Produkt ist nicht verfügbar
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SP001385054 Infineon-IPP60R120C7-DS-v02_00-EN.pdf?fileId=5546d462518ffd850151a4fa44c90ed3
SP001385054
Hersteller: Infineon Technologies
Description: IPP60R120C7XKSA1 - 600V COOLMOS
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Tc)
Rds On (Max) @ Id, Vgs: 120mOhm @ 7.8A, 10V
Power Dissipation (Max): 92W (Tc)
Vgs(th) (Max) @ Id: 4V @ 390µA
Supplier Device Package: PG-TO220-3-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 400 V
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CY7C1370KV25-167AXC download
CY7C1370KV25-167AXC
Hersteller: Infineon Technologies
Description: IC SRAM 18MBIT PAR 100TQFP
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Memory Size: 18Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 2.375V ~ 2.625V
Technology: SRAM - Synchronous, SDR
Clock Frequency: 167 MHz
Memory Format: SRAM
Supplier Device Package: 100-TQFP (14x20)
Memory Interface: Parallel
Access Time: 3.4 ns
Memory Organization: 512K x 36
DigiKey Programmable: Not Verified
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Anzahl Preis
2+15.42 EUR
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FXE167F96F66LACXP INFNS12557-1.pdf?t.download=true&u=5oefqw
FXE167F96F66LACXP
Hersteller: Infineon Technologies
Description: IC MCU 16BIT 768KB FLASH 144LQFP
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SAF-XE167K-48F66LAC INFNS12557-1.pdf?t.download=true&u=5oefqw
SAF-XE167K-48F66LAC
Hersteller: Infineon Technologies
Description: 16-BIT FLASH MICROCONTROLLER, 80
Packaging: Bulk
DigiKey Programmable: Not Verified
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Anzahl Preis
44+11.71 EUR
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SAF-XE167K-72F66LAC INFNS12557-1.pdf?t.download=true&u=5oefqw
SAF-XE167K-72F66LAC
Hersteller: Infineon Technologies
Description: 16-BIT FLASH MICROCONTROLLER, 80
Packaging: Bulk
DigiKey Programmable: Not Verified
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Anzahl Preis
43+11.93 EUR
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SAF-XE167H-96F66LAC INFNS12557-1.pdf?t.download=true&u=5oefqw
SAF-XE167H-96F66LAC
Hersteller: Infineon Technologies
Description: XE167 - 16-BIT FLASH RISC MICROC
Packaging: Bulk
Package / Case: 144-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 66MHz
Program Memory Size: 768KB (768K x 8)
RAM Size: 82K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: C166SV2
Data Converters: A/D 8, 16x8/10b SAR
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Connectivity: EBI/EMI, I²C, LINbus, QSPI, SPI, SSC, UART/USART, USI
Peripherals: I²S, POR, PWM, WDT
Supplier Device Package: PG-LQFP-144-4
Part Status: Active
Number of I/O: 118
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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SAF-XE167F-96F80LACFXUMA1 INFNS12557-1.pdf?t.download=true&u=5oefqw
SAF-XE167F-96F80LACFXUMA1
Hersteller: Infineon Technologies
Description: 16-BIT FLASH RISC MCU
Produkt ist nicht verfügbar
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SAFXE167F96F66LAC INFNS12557-1.pdf?t.download=true&u=5oefqw
SAFXE167F96F66LAC
Hersteller: Infineon Technologies
Description: IC MCU 16BIT 768KB FLASH 144LQFP
Produkt ist nicht verfügbar
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XE167F96F66LACFXUMA1 XE167_ds_v2.1_2008_08.pdf
XE167F96F66LACFXUMA1
Hersteller: Infineon Technologies
Description: IC MCU 16BIT 768KB FLASH 144LQFP
Packaging: Tape & Reel (TR)
Package / Case: 144-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 66MHz
Program Memory Size: 768KB (768K x 8)
RAM Size: 82K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: C166SV2
Data Converters: A/D 24x10b
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Connectivity: CANbus, EBI/EMI, I2C, LINbus, SPI, SSC, UART/USART, USI
Peripherals: I2S, POR, PWM, WDT
Supplier Device Package: PG-LQFP-144-4
Number of I/O: 118
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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SAF-XE167GM-48F80L AA XE167xM.pdf
SAF-XE167GM-48F80L AA
Hersteller: Infineon Technologies
Description: IC MCU 16BIT 384KB FLASH 144LQFP
Packaging: Tape & Reel (TR)
Package / Case: 144-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 80MHz
Program Memory Size: 384KB (384K x 8)
RAM Size: 34K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: C166SV2
Data Converters: A/D 16x10b
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Connectivity: CANbus, EBI/EMI, I2C, LINbus, SPI, SSC, UART/USART, USI
Peripherals: I2S, POR, PWM, WDT
Supplier Device Package: PG-LQFP-144-4
Number of I/O: 119
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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SAF-XE167GM-72F80L AA XE167xM.pdf
SAF-XE167GM-72F80L AA
Hersteller: Infineon Technologies
Description: IC MCU 16BIT 576KB FLASH 144LQFP
Produkt ist nicht verfügbar
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SAF-XE167HM-48F80L AA XE167xM.pdf
SAF-XE167HM-48F80L AA
Hersteller: Infineon Technologies
Description: IC MCU 16BIT 384KB FLASH 144LQFP
Produkt ist nicht verfügbar
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EVAL1ED44176N01FTOBO1 Infineon-Low-side_driver-ApplicationNotes-v01_00-EN.pdf?fileId=5546d46265487f7b01655c2d8358778a
EVAL1ED44176N01FTOBO1
Hersteller: Infineon Technologies
Description: EVAL BOARD FOR 1ED44176N01F
Packaging: Bulk
Function: Gate Driver
Type: Power Management
Utilized IC / Part: 1ED44176N01F
Supplied Contents: Board(s)
Part Status: Active
Contents: Board(s)
auf Bestellung 3 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+48.07 EUR
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ETD480N22P60HPSA1 Infineon-DS_eTT480N22P60-DS-v03_01-EN.pdf?fileId=5546d46266f85d6301670d4dadb9366e
ETD480N22P60HPSA1
Hersteller: Infineon Technologies
Description: THYR / DIODE MODULE DK
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 135°C (TC)
Structure: Series Connection - SCR/Diode
Current - Hold (Ih) (Max): 300 mA
Current - Gate Trigger (Igt) (Max): 250 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 14700A @ 50Hz
Number of SCRs, Diodes: 1 SCR, 1 Diode
Current - On State (It (AV)) (Max): 480 A
Voltage - Gate Trigger (Vgt) (Max): 2.2 V
Current - On State (It (RMS)) (Max): 700 A
Voltage - Off State: 2.2 kV
Produkt ist nicht verfügbar
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TC267D40F200NBCKXUMA1 Infineon-TC26xBC-DS-v01_00-EN.pdf?fileId=5546d462694c98b40169538e06030445
TC267D40F200NBCKXUMA1
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 2.5MB FLSH 292LFBGA
Packaging: Tape & Reel (TR)
Package / Case: 292-LFBGA
Mounting Type: Surface Mount
Speed: 200MHz
Program Memory Size: 2.5MB (2.5M x 8)
RAM Size: 240K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
EEPROM Size: 96K x 8
Core Processor: TriCore™
Data Converters: A/D 48x12b SAR, 3 x Sigma-Delta
Core Size: 32-Bit Dual-Core
Voltage - Supply (Vcc/Vdd): 3.3V, 5V
Connectivity: ASC, CANbus, Ethernet, FlexRay, HSSL, I2C, LINbus, MSC, PSI5, QSPI, SENT
Peripherals: DMA, WDT
Supplier Device Package: PG-LFBGA-292-6
Number of I/O: 88
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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TC267D40F200NBCKXUMA1 Infineon-TC26xBC-DS-v01_00-EN.pdf?fileId=5546d462694c98b40169538e06030445
TC267D40F200NBCKXUMA1
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 2.5MB FLSH 292LFBGA
Packaging: Cut Tape (CT)
Package / Case: 292-LFBGA
Mounting Type: Surface Mount
Speed: 200MHz
Program Memory Size: 2.5MB (2.5M x 8)
RAM Size: 240K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
EEPROM Size: 96K x 8
Core Processor: TriCore™
Data Converters: A/D 48x12b SAR, 3 x Sigma-Delta
Core Size: 32-Bit Dual-Core
Voltage - Supply (Vcc/Vdd): 3.3V, 5V
Connectivity: ASC, CANbus, Ethernet, FlexRay, HSSL, I2C, LINbus, MSC, PSI5, QSPI, SENT
Peripherals: DMA, WDT
Supplier Device Package: PG-LFBGA-292-6
Number of I/O: 88
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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IAUC100N04S6L025ATMA1 Infineon-IAUC100N04S6L025-DataSheet-v01_00-EN.pdf?fileId=5546d4626afcd350016b1c9a8f861151
IAUC100N04S6L025ATMA1
Hersteller: Infineon Technologies
Description: IAUC100N04S6L025ATMA1
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 2.56mOhm @ 50A, 10V
Power Dissipation (Max): 62W (Tc)
Vgs(th) (Max) @ Id: 2V @ 24µA
Supplier Device Package: PG-TDSON-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2019 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 35000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5000+0.57 EUR
Mindestbestellmenge: 5000
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IAUC100N04S6L025ATMA1 Infineon-IAUC100N04S6L025-DataSheet-v01_00-EN.pdf?fileId=5546d4626afcd350016b1c9a8f861151
IAUC100N04S6L025ATMA1
Hersteller: Infineon Technologies
Description: IAUC100N04S6L025ATMA1
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 2.56mOhm @ 50A, 10V
Power Dissipation (Max): 62W (Tc)
Vgs(th) (Max) @ Id: 2V @ 24µA
Supplier Device Package: PG-TDSON-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2019 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 36332 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
8+2.34 EUR
12+1.49 EUR
100+1.01 EUR
500+0.80 EUR
1000+0.69 EUR
Mindestbestellmenge: 8
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TDB6HK165N16LOFHOSA1
Hersteller: Infineon Technologies
Description: SCR MODULE VDRM 1600V 70A
Packaging: Bulk
Part Status: Discontinued at Digi-Key
auf Bestellung 32 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+349.86 EUR
Mindestbestellmenge: 2
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TDB6HK124N16RRBOSA1 INFN-S-A0005253096-1.pdf?t.download=true&u=5oefqw
TDB6HK124N16RRBOSA1
Hersteller: Infineon Technologies
Description: SCR MODULE 1.6KV 70A MODULE
auf Bestellung 10 Stücke:
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TDB6HK240N16PBOSA1 Infineon-TDB6HK240N16P-DS-v02_00-en_de.pdf?fileId=db3a3043243b5f170124ee1179a75223
TDB6HK240N16PBOSA1
Hersteller: Infineon Technologies
Description: THYRISTOR MODULE VDRM 1600V 70A
auf Bestellung 6 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+349.68 EUR
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TDB6HK180N16RRB21BOSA1 Infineon-TDB6HK180N16RR-DS-v02_00-en_cn.pdf?fileId=db3a304340f610c201410c3f12e4330c
Hersteller: Infineon Technologies
Description: 1600VBRIDGE MODULE
Packaging: Bulk
Part Status: Active
auf Bestellung 10 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+231.16 EUR
Mindestbestellmenge: 3
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TDB6HK165N16LOFHOSA1
Hersteller: Infineon Technologies
Description: SCR MODULE VDRM 1600V 70A
Packaging: Tray
Part Status: Discontinued at Digi-Key
Produkt ist nicht verfügbar
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TDB6HK360N16P Infineon-TDB6HK360N16P-DS-v02_00-en_de.pdf?fileId=db3a3043243b5f170124ee13511f5228
Hersteller: Infineon Technologies
Description: TDBXHK360 - BRIDGE RECTIFIER & A
Produkt ist nicht verfügbar
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IPB034N03LGATMA1 Infineon-IPP034N03L-DS-v02_00-en%5B1%5D.pdf?fileId=db3a304313b8b5a60113d3c9730503e7
IPB034N03LGATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 30V 80A D2PAK
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
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SPS03N60C3AKMA1
SPS03N60C3AKMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 650V 3.2A TO251-3-11
Packaging: Bulk
Package / Case: TO-251-3 Stub Leads, IPak
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.2A (Tc)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 2A, 10V
Power Dissipation (Max): 38W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 135µA
Supplier Device Package: PG-TO251-3-11
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 400 pF @ 25 V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
546+0.85 EUR
Mindestbestellmenge: 546
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IKD03N60RFATMA1 Infineon-IKD03N60RF-DS-v02_06-EN.pdf?fileId=db3a30433c5c92fb013c5d3978350068
IKD03N60RFATMA1
Hersteller: Infineon Technologies
Description: IGBT TRENCH/FS 600V 6.5A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 31 ns
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 2.5A
Supplier Device Package: PG-TO252-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 10ns/128ns
Switching Energy: 50µJ (on), 40µJ (off)
Test Condition: 400V, 2.5A, 68Ohm, 15V
Gate Charge: 17.1 nC
Part Status: Active
Current - Collector (Ic) (Max): 6.5 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 7.5 A
Power - Max: 53.6 W
auf Bestellung 15 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
8+2.50 EUR
12+1.57 EUR
Mindestbestellmenge: 8
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ILB03N60 INFNS07533-1.pdf?t.download=true&u=5oefqw
ILB03N60
Hersteller: Infineon Technologies
Description: IGBT, 4.5A, 600V, N-CHANNEL
Packaging: Bulk
Part Status: Active
Produkt ist nicht verfügbar
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ILP03N60 INFNS07428-1.pdf?t.download=true&u=5oefqw
ILP03N60
Hersteller: Infineon Technologies
Description: IGBT, 4.5A, 600V, N-CHANNEL
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Input Type: Standard
Reverse Recovery Time (trr): 250 ns
Vce(on) (Max) @ Vge, Ic: 2.9V @ 10V, 3A
Supplier Device Package: PG-TO220-3-1
Td (on/off) @ 25°C: 15ns/100ns
Switching Energy: 12µJ (on), 20µJ (off)
Test Condition: 400V, 0.8A, 60Ohm, 10V
Gate Charge: 8.5 nC
Part Status: Active
Current - Collector (Ic) (Max): 4.5 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 5.5 A
Power - Max: 27 W
Produkt ist nicht verfügbar
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SPD03N60C3 Infineon-SPD03N60C3-DS-v02_06-NA.pdf?fileId=db3a3043191a246301192907f3b27f4b
SPD03N60C3
Hersteller: Infineon Technologies
Description: MOSFET N-CH 600V 3.2A TO252
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.2A (Tc)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 2A, 10V
Power Dissipation (Max): 38W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 135µA
Supplier Device Package: PG-TO252-3-313
Part Status: Active
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 400 pF @ 25 V
Produkt ist nicht verfügbar
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IDL04G65C5XUMA2 Infineon-IDL04G65C5-DS-v02_00-en.pdf?fileId=db3a304342e8be2c0143000fb94c146a
IDL04G65C5XUMA2
Hersteller: Infineon Technologies
Description: DIODE SIL CARBIDE 650V 4A VSON-4
Packaging: Tape & Reel (TR)
Package / Case: 4-PowerTSFN
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 130pF @ 1V, 1MHz
Current - Average Rectified (Io): 4A
Supplier Device Package: PG-VSON-4
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 4 A
Current - Reverse Leakage @ Vr: 70 µA @ 650 V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+1.56 EUR
Mindestbestellmenge: 3000
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IDL04G65C5XUMA2 Infineon-IDL04G65C5-DS-v02_00-en.pdf?fileId=db3a304342e8be2c0143000fb94c146a
IDL04G65C5XUMA2
Hersteller: Infineon Technologies
Description: DIODE SIL CARBIDE 650V 4A VSON-4
Packaging: Cut Tape (CT)
Package / Case: 4-PowerTSFN
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 130pF @ 1V, 1MHz
Current - Average Rectified (Io): 4A
Supplier Device Package: PG-VSON-4
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 4 A
Current - Reverse Leakage @ Vr: 70 µA @ 650 V
auf Bestellung 3390 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
6+3.47 EUR
10+2.88 EUR
100+2.29 EUR
500+1.94 EUR
1000+1.65 EUR
Mindestbestellmenge: 6
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IM818SCCXKMA1 Infineon-IM818-SCC-DS-v02_01-EN.pdf?fileId=5546d46265f064ff0165f9e925ca2ea1
IM818SCCXKMA1
Hersteller: Infineon Technologies
Description: CIPOS MAXI 1200V 8A 24PWRDIP
Packaging: Tube
Package / Case: 24-PowerDIP Module (1.205", 30.60mm)
Mounting Type: Through Hole
Type: IGBT
Configuration: 3 Phase Inverter
Voltage - Isolation: 2500Vrms
Current: 8 A
Voltage: 1.2 kV
auf Bestellung 206 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+43.58 EUR
14+34.95 EUR
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IRF100P219AKMA1 Infineon-IRF100P219-DataSheet-v02_01-EN.pdf?fileId=5546d462602a9dc80160e20d52df4b86
IRF100P219AKMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 100V TO247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 203A (Tc)
Rds On (Max) @ Id, Vgs: 1.7mOhm @ 100A, 10V
Power Dissipation (Max): 3.8W (Ta), 341W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 278µA
Supplier Device Package: PG-TO247-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 210 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12020 pF @ 50 V
auf Bestellung 251 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+8.59 EUR
25+6.23 EUR
100+6.22 EUR
Mindestbestellmenge: 3
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IRF100P218AKMA1 Infineon-IRF100P218-DataSheet-v02_01-EN.pdf?fileId=5546d462602a9dc80160e20d3eca4b83
IRF100P218AKMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 100V 209A TO247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 209A (Tc)
Rds On (Max) @ Id, Vgs: 1.28mOhm @ 100A, 10V
Power Dissipation (Max): 3.8W (Ta), 556W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 278µA
Supplier Device Package: PG-TO247-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 412 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 24000 pF @ 50 V
auf Bestellung 658 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+13.71 EUR
25+8.24 EUR
100+6.94 EUR
500+6.12 EUR
Mindestbestellmenge: 2
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FP150R07N3E4 INFNS28449-1.pdf?t.download=true&u=5oefqw
Hersteller: Infineon Technologies
Description: FP150R07 - IGBT MODULE
Produkt ist nicht verfügbar
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FP150R07N3E4_B11 INFNS28450-1.pdf?t.download=true&u=5oefqw
Hersteller: Infineon Technologies
Description: FP150R07 - IGBT MODULE
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Three Phase Bridge Rectifier
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 150A
NTC Thermistor: Yes
Supplier Device Package: AG-ECONO3
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 150 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Power - Max: 430 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 9.3 nF @ 25 V
auf Bestellung 116 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+305.40 EUR
Mindestbestellmenge: 2
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ESD201-B2-03LRHE6327 INFN-S-A0000325460-1.pdf?t.download=true&u=5oefqw
Hersteller: Infineon Technologies
Description: TRANS VOLTAGE SUPPRESSOR DIODE
Packaging: Bulk
Package / Case: SC-101, SOT-883
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C (TA)
Applications: General Purpose
Capacitance @ Frequency: 5pF @ 1MHz
Current - Peak Pulse (10/1000µs): 16A
Voltage - Reverse Standoff (Typ): 5.5V (Max)
Supplier Device Package: PG-TSLP-3
Bidirectional Channels: 2
Voltage - Clamping (Max) @ Ipp: 12.1V (Typ), 10.2V (Typ)
Power Line Protection: No
Part Status: Active
auf Bestellung 534811 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5189+0.10 EUR
Mindestbestellmenge: 5189
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STT1400N18P55XPSA1 Infineon-STT1400N18P55-DataSheet-v03_01-EN.pdf?fileId=5546d46272aa54c00172bc99a9775672
Hersteller: Infineon Technologies
Description: THYR / DIODE MODULE DK
auf Bestellung 5 Stücke:
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65DN06B02ELEMXPSA1 Infineon-65DN06B02-DataSheet-v03_01-EN.pdf?fileId=5546d4627506bb320175079ef4d40391
65DN06B02ELEMXPSA1
Hersteller: Infineon Technologies
Description: DIODE STD 600V 15130A BGDELEM1
Packaging: Tray
Package / Case: DO-200AC, K-PUK
Mounting Type: Clamp On
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 15130A
Supplier Device Package: BG-D-ELEM-1
Operating Temperature - Junction: 180°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 890 mV @ 8000 A
Current - Reverse Leakage @ Vr: 100 mA @ 600 V
auf Bestellung 19 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+739.32 EUR
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STT1900N18P55XPSA1 Infineon-STT1900N18P55-DataSheet-v01_00-EN.pdf?fileId=5546d46272aa54c00172bc999c30566f
Hersteller: Infineon Technologies
Description: THYR / DIODE MODULE DK
auf Bestellung 5 Stücke:
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T700N22TOFXPSA1 Infineon-T700N-DataSheet-v03_01-EN.pdf?fileId=5546d4627112d9d501712b084825402e
Hersteller: Infineon Technologies
Description: T700N22 - PHASE CONTROL THYRISTO
auf Bestellung 6 Stücke:
Lieferzeit 10-14 Tag (e)
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T300N14TOFXPSA1 Infineon-T300N-DS-v03_01-en_de.pdf?fileId=db3a3043284aacd80128a5a8d27c0053
Hersteller: Infineon Technologies
Description: SCR MODULE 1800V 400A DO200AA
Produkt ist nicht verfügbar
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T300N16TOFXPSA1 Infineon-T300N-DS-v03_01-en_de.pdf?fileId=db3a3043284aacd80128a5a8d27c0053
Hersteller: Infineon Technologies
Description: SCR MODULE 1800V 400A DO200AA
Produkt ist nicht verfügbar
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T430N16TOFXPSA1 Infineon-T430N-DS-v03_01-en_de.pdf?fileId=db3a3043284aacd801286374f6a45325
Hersteller: Infineon Technologies
Description: SCR MODULE 1800V 700A DO200AA
Produkt ist nicht verfügbar
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T660N22TOFXPSA1 Infineon-T660N-DataSheet-v01_00-EN.pdf?fileId=5546d4627112d9d501712afaeacd3fe7
Hersteller: Infineon Technologies
Description: SCR MODULE 2600V 1500A DO200AB
Produkt ist nicht verfügbar
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T660N26TOFXPSA1 Infineon-T660N-DataSheet-v01_00-EN.pdf?fileId=5546d4627112d9d501712afaeacd3fe7
Hersteller: Infineon Technologies
Description: SCR MODULE 2600V 1500A DO200AB
Produkt ist nicht verfügbar
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41040324AWLXPSA1
Hersteller: Infineon Technologies
Description: DIODE THYRISTOR
Produkt ist nicht verfügbar
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BSO330N02KG INFNS27921-1.pdf?t.download=true&u=5oefqw
Hersteller: Infineon Technologies
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.4W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 5.4A
Input Capacitance (Ciss) (Max) @ Vds: 730pF @ 10V
Rds On (Max) @ Id, Vgs: 30mOhm @ 6.5A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 4.9nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.2V @ 20µA
Supplier Device Package: PG-DSO-8
Part Status: Active
auf Bestellung 1422 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1422+0.44 EUR
Mindestbestellmenge: 1422
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IPP042N03LG INFNS16316-1.pdf?t.download=true&u=5oefqw
IPP042N03LG
Hersteller: Infineon Technologies
Description: IPP042N03 - 12V-300V N-CHANNEL P
auf Bestellung 71180 Stücke:
Lieferzeit 10-14 Tag (e)
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BSC042N03LSG INFNS27447-1.pdf?t.download=true&u=5oefqw
BSC042N03LSG
Hersteller: Infineon Technologies
Description: BSC042N03 - 12V-300V N-CHANNEL P
Produkt ist nicht verfügbar
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IPP120N10S403AKSA1 IPP_B_I120N10S4-03-Data-Sheet-10-Infineon.pdf?fileId=5546d46147a9c2e401480c5c81580b3a
IPP120N10S403AKSA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 100V 120A TO220-3
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 3.9mOhm @ 100A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 180µA
Supplier Device Package: PG-TO220-3-1
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 140 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10120 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 28968 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
108+4.55 EUR
Mindestbestellmenge: 108
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IAUZ30N10S5L240ATMA1 Infineon-IAUZ30N10S5L240-DataSheet-v01_00-EN.pdf?fileId=5546d4626c1f3dc3016c8a62a9610dd8
IAUZ30N10S5L240ATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 100V 30A 8TSDSON-32
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 24mOhm @ 15A, 10V
Power Dissipation (Max): 45.5W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 15µA
Supplier Device Package: PG-TSDSON-8-32
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 832 pF @ 50 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 6469 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
8+2.36 EUR
12+1.49 EUR
100+0.99 EUR
500+0.78 EUR
1000+0.71 EUR
2000+0.65 EUR
Mindestbestellmenge: 8
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FP50R07U1E4BPSA1 FP50R07U1E4.pdf
FP50R07U1E4BPSA1
Hersteller: Infineon Technologies
Description: IGBT MODULE 650V 75A 230W
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 50A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Part Status: Obsolete
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Power - Max: 230 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 3.1 nF @ 25 V
auf Bestellung 231 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
6+89.77 EUR
Mindestbestellmenge: 6
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FF150R17ME3GBOSA1 Infineon-FF150R17ME3G-DS-v02_01-en_de.pdf?fileId=db3a30431441fb5d0114502cbb65039c
FF150R17ME3GBOSA1
Hersteller: Infineon Technologies
Description: IGBT MOD 1700V 240A 1050W
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: 2 Independent
Operating Temperature: -40°C ~ 125°C
Vce(on) (Max) @ Vge, Ic: 2.45V @ 15V, 150A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 240 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Power - Max: 1050 W
Current - Collector Cutoff (Max): 3 mA
Input Capacitance (Cies) @ Vce: 13.5 nF @ 25 V
auf Bestellung 866 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+206.40 EUR
Mindestbestellmenge: 3
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FD150R12RT4HOSA1 Infineon-FD150R12RT4-DS-v02_03-en_de.pdf?fileId=db3a3043271faefd01279a5e45e041b2
FD150R12RT4HOSA1
Hersteller: Infineon Technologies
Description: FD150R12 - IGBT MODULE
auf Bestellung 16 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
6+89.63 EUR
Mindestbestellmenge: 6
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DF150R12RT4HOSA1 Infineon-DF150R12RT4-DS-v02_02-en_de.pdf?fileId=db3a304327b89750012805d5d8646118
DF150R12RT4HOSA1
Hersteller: Infineon Technologies
Description: IGBT MOD 1200V 150A 790W
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single Chopper
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 150A
NTC Thermistor: No
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 150 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 790 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 9.3 nF @ 25 V
auf Bestellung 705 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+146.24 EUR
Mindestbestellmenge: 4
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