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IPB60R055CFD7ATMA1 IPB60R055CFD7ATMA1 Infineon Technologies Infineon-IPB60R055CFD7-DataSheet-v02_00-EN.pdf?fileId=5546d4626b2d8e69016bb2eb02953007 Description: MOSFET N-CH 600V 38A TO263-3
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 38A (Tc)
Rds On (Max) @ Id, Vgs: 55mOhm @ 18A, 10V
Power Dissipation (Max): 178W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 900µA
Supplier Device Package: PG-TO263-3-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 79 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3194 pF @ 400 V
auf Bestellung 747 Stücke:
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2+12.16 EUR
10+8.23 EUR
100+6 EUR
500+5.05 EUR
Mindestbestellmenge: 2
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IPB60R070CFD7ATMA1 IPB60R070CFD7ATMA1 Infineon Technologies Infineon-IPB60R070CFD7-DataSheet-v02_00-EN.pdf?fileId=5546d4626b2d8e69016bb22a2b8c183d Description: MOSFET N-CH 600V 31A TO263-3
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 31A (Tc)
Rds On (Max) @ Id, Vgs: 70mOhm @ 15.1A, 10V
Power Dissipation (Max): 156W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 760µA
Supplier Device Package: PG-TO263-3-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 67 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2721 pF @ 400 V
auf Bestellung 1827 Stücke:
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2+9.17 EUR
10+6.43 EUR
100+4.81 EUR
500+4.32 EUR
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IPB60R040CFD7ATMA1 IPB60R040CFD7ATMA1 Infineon Technologies Infineon-IPB60R040CFD7-DataSheet-v02_00-EN.pdf?fileId=5546d4626b2d8e69016bb2d82dcf2f30 Description: MOSFET N-CH 600V 50A TO263-3
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 40mOhm @ 24.9A, 10V
Power Dissipation (Max): 227W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1.25mA
Supplier Device Package: PG-TO263-3-2
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 108 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4351 pF @ 400 V
auf Bestellung 3000 Stücke:
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1000+5.83 EUR
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IPB60R040CFD7ATMA1 IPB60R040CFD7ATMA1 Infineon Technologies Infineon-IPB60R040CFD7-DataSheet-v02_00-EN.pdf?fileId=5546d4626b2d8e69016bb2d82dcf2f30 Description: MOSFET N-CH 600V 50A TO263-3
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 40mOhm @ 24.9A, 10V
Power Dissipation (Max): 227W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1.25mA
Supplier Device Package: PG-TO263-3-2
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 108 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4351 pF @ 400 V
auf Bestellung 3700 Stücke:
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2+13.46 EUR
10+9.16 EUR
100+6.74 EUR
500+5.83 EUR
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IPD60R750E6BTMA1 IPD60R750E6BTMA1 Infineon Technologies Infineon-IPD60R750E6-DS-v02_02-EN.pdf?fileId=db3a30432a14dd54012a194f52852b08 Description: MOSFET N-CH 600V 5.7A TO252
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IPD60R380E6ATMA2 IPD60R380E6ATMA2 Infineon Technologies Infineon--DS-v02_05-EN.pdf?fileId=db3a30433ea3aef6013eb24aa4521c2a Description: MOSFET N-CH 600V 10.6A TO252-3
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10.6A (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 3.8A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 300µA
Supplier Device Package: PG-TO252-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 100 V
auf Bestellung 6650 Stücke:
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462+1.09 EUR
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IPD60R800CEAUMA1 IPD60R800CEAUMA1 Infineon Technologies IPD%2CIPA60R800CE.pdf Description: CONSUMER
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.4A (Tc)
Rds On (Max) @ Id, Vgs: 800mOhm @ 2A, 10V
Power Dissipation (Max): 74W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 170µA
Supplier Device Package: PG-TO252-3-344
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 17.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 373 pF @ 100 V
Produkt ist nicht verfügbar
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IPA126N10N3G IPA126N10N3G Infineon Technologies INFNS27818-1.pdf?t.download=true&u=5oefqw Description: 35A, 100V, 0.0126OHM, N-CHANNEL
auf Bestellung 1450 Stücke:
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399+1.21 EUR
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CHL8328-35CRT CHL8328-35CRT Infineon Technologies IR3536,38_CHL8326,28_v1.09_6-21-13.pdf Description: IC REG CTRLR DDR 2OUT 56VQFN
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IAUC41N06S5L100ATMA1 IAUC41N06S5L100ATMA1 Infineon Technologies Infineon-IAUC41N06S5L100-DataSheet-v01_00-EN.pdf?fileId=5546d46271bf4f920171f45f332861ae Description: MOSFET N-CH 60V 41A TDSON-8-33
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 41A (Tj)
Rds On (Max) @ Id, Vgs: 10mOhm @ 20A, 10V
Power Dissipation (Max): 42W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 13µA
Supplier Device Package: PG-TDSON-8-33
Part Status: Active
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 16.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1205 pF @ 30 V
auf Bestellung 19868 Stücke:
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5000+0.49 EUR
Mindestbestellmenge: 5000
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ICE5QR1680BGXUMA1 ICE5QR1680BGXUMA1 Infineon Technologies Infineon-ICE5QRxx80BG-DataSheet-v02_10-EN.pdf?fileId=5546d462700c0ae601707f2fe42513ad Description: IC OFFLINE SWITCH FLYBACK 12DSO
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.154", 3.90mm Width), 12 Leads
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Internal Switch(s): Yes
Voltage - Breakdown: 800V
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 10V ~ 27V
Supplier Device Package: PG-DSO-12-21
Fault Protection: Current Limiting, Open Loop, Over Load, Over Temperature, Over Voltage
Voltage - Start Up: 16 V
Part Status: Active
Power (Watts): 50 W
Produkt ist nicht verfügbar
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ICE5QR1680BGXUMA1 ICE5QR1680BGXUMA1 Infineon Technologies Infineon-ICE5QRxx80BG-DataSheet-v02_10-EN.pdf?fileId=5546d462700c0ae601707f2fe42513ad Description: IC OFFLINE SWITCH FLYBACK 12DSO
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.154", 3.90mm Width), 12 Leads
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Internal Switch(s): Yes
Voltage - Breakdown: 800V
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 10V ~ 27V
Supplier Device Package: PG-DSO-12-21
Fault Protection: Current Limiting, Open Loop, Over Load, Over Temperature, Over Voltage
Voltage - Start Up: 16 V
Part Status: Active
Power (Watts): 50 W
auf Bestellung 1198 Stücke:
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5+3.63 EUR
10+2.68 EUR
25+2.44 EUR
100+2.18 EUR
250+2.06 EUR
500+1.98 EUR
1000+1.92 EUR
Mindestbestellmenge: 5
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IPC302N15N3X7SA1 Infineon Technologies dgdl?folderId=db3a30434422e00e01442b3248b750f0&fileId=db3a30434422e00e01442b691dc3512f Description: MV POWER MOS
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Rds On (Max) @ Id, Vgs: 100mOhm @ 2A, 10V
Vgs(th) (Max) @ Id: 4V @ 270µA
Supplier Device Package: Die
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Drain to Source Voltage (Vdss): 150 V
Produkt ist nicht verfügbar
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FZ400R17KE3S4HOSA1 FZ400R17KE3S4HOSA1 Infineon Technologies Infineon-FZ400R17KE3-DS-v02_02-EN.pdf?fileId=db3a304412b407950112b43043334fd6 Description: IGBT MOD 1700V 620A 2250W
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -40°C ~ 125°C
Vce(on) (Max) @ Vge, Ic: 2.45V @ 15V, 400A
NTC Thermistor: No
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 620 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Power - Max: 2250 W
Current - Collector Cutoff (Max): 3 mA
Input Capacitance (Cies) @ Vce: 36 nF @ 25 V
auf Bestellung 363 Stücke:
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3+196.89 EUR
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FS225R12KE4BOSA1 FS225R12KE4BOSA1 Infineon Technologies Infineon-FS225R12KE4-DS-v02_00-en_de.pdf?fileId=db3a30431689f4420116c9e1a17509c6 Description: IGBT MOD 1200V 320A 1100W
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Full Bridge
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 225A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 320 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 1100 W
Current - Collector Cutoff (Max): 3 mA
Input Capacitance (Cies) @ Vce: 13 nF @ 25 V
auf Bestellung 1561 Stücke:
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1+578.62 EUR
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FD400R07PE4RB6BOSA1 Infineon Technologies Infineon-FD400R07PE4R_B6-DS-v03_00-en_de.pdf?fileId=db3a30433a047ba0013a6e432c415fb4 Description: IGBT MOD 650V 460A 1150W
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 400A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 460 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Power - Max: 1150 W
Current - Collector Cutoff (Max): 20 µA
Input Capacitance (Cies) @ Vce: 18.5 nF @ 25 V
auf Bestellung 267 Stücke:
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2+253.48 EUR
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IPA180N10N3G IPA180N10N3G Infineon Technologies INFNS27819-1.pdf?t.download=true&u=5oefqw Description: 28A, 100V, 0.018OHM, N-CHANNEL,
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 28A, 10V
Power Dissipation (Max): 30W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 35µA
Supplier Device Package: PG-TO220-3-111
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 50 V
auf Bestellung 400 Stücke:
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400+1.25 EUR
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IPDD60R145CFD7XTMA1 IPDD60R145CFD7XTMA1 Infineon Technologies Infineon-IPDD60R145CFD7-DataSheet-v02_00-EN.pdf?fileId=5546d4627506bb3201751c2ea92342b7 Description: MOSFET N-CH 600V 24A HDSOP-10
Packaging: Cut Tape (CT)
Package / Case: 10-PowerSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 145mOhm @ 6A, 10V
Power Dissipation (Max): 160W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 300µA
Supplier Device Package: PG-HDSOP-10-1
Part Status: Active
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1199 pF @ 400 V
auf Bestellung 3296 Stücke:
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10+4.31 EUR
100+3.12 EUR
500+2.49 EUR
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TLE9862QXA40XUMA1 Infineon Technologies Infineon-TLE9862QXA40-DataSheet-v01_00-EN.pdf?fileId=5546d46274f6cd4c0174fcecc8ed52a2 Description: EMBEDDED POWER
Packaging: Cut Tape (CT)
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: LINbus, SPI, SSC, UART/USART
RAM Size: 8K x 8
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 5.5V ~ 27V
Controller Series: TLE986x
Program Memory Type: FLASH (256kB)
Core Processor: ARM® Cortex®-M3
Supplier Device Package: PG-VQFN-48-29
Number of I/O: 10
DigiKey Programmable: Not Verified
Grade: Automotive
Qualification: AEC-Q100
auf Bestellung 4895 Stücke:
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2+10.68 EUR
10+8.21 EUR
25+7.59 EUR
100+6.91 EUR
250+6.58 EUR
500+6.39 EUR
1000+6.22 EUR
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IRFS33N15DTRLP IRFS33N15DTRLP Infineon Technologies irfs33n15d.pdf Description: MOSFET N-CH 150V 33A D2PAK
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SP376251064XTMA1 Infineon Technologies Description: TIRE PRESSURE SENSOR
Packaging: Bulk
auf Bestellung 7000 Stücke:
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113+4.48 EUR
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TT162N16KOFHPSA1 TT162N16KOFHPSA1 Infineon Technologies Infineon-TT162N-DS-v01_00-en_de.pdf?fileId=db3a304412b407950112b42f789a4bb5 Description: SCR MODULE 1.6KV 260A MODULE
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CY7C1248KV18-400BZXC CY7C1248KV18-400BZXC Infineon Technologies download Description: IC SRAM 36MBIT PARALLEL 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 36Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, DDR II+
Clock Frequency: 400 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (13x15)
Memory Interface: Parallel
Memory Organization: 2M x 18
DigiKey Programmable: Not Verified
auf Bestellung 398 Stücke:
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1+33.02 EUR
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CY7C1265KV18-450BZXC CY7C1265KV18-450BZXC Infineon Technologies download Description: IC SRAM 36MBIT PARALLEL 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 36Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, QDR II+
Clock Frequency: 450 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (13x15)
Memory Interface: Parallel
Memory Organization: 1M x 36
DigiKey Programmable: Not Verified
auf Bestellung 172 Stücke:
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1+37.89 EUR
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TLS850D0TAV50ATMA1 TLS850D0TAV50ATMA1 Infineon Technologies Infineon-TLS850D0TA-DS-v01_00-EN.pdf?fileId=5546d46258fc0bc1015969edb50c4266 Description: IC REG LIN 5V 500MA PG-TO263-7-1
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 500mA
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 5 µA
Voltage - Input (Max): 40V
Number of Regulators: 1
Supplier Device Package: PG-TO263-7-1
Voltage - Output (Min/Fixed): 5V
Control Features: Delay, Enable, Reset
Grade: Automotive
Part Status: Active
PSRR: 59dB (100Hz)
Voltage Dropout (Max): 0.425V @ 250mA
Protection Features: Over Current, Over Temperature, Short Circuit
Current - Supply (Max): 82 µA
Qualification: AEC-Q100
auf Bestellung 597 Stücke:
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4+4.91 EUR
10+3.68 EUR
25+3.38 EUR
100+3.04 EUR
250+2.88 EUR
500+2.78 EUR
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IPB100N06S2L05ATMA2 IPB100N06S2L05ATMA2 Infineon Technologies Infineon-IPP_B100N06S2L_05-DS-v01_00-en%5B1%5D.pdf?fileId=db3a304412b407950112b43227e5573c&ack=t Description: MOSFET N-CH 55V 100A TO263-3
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 4.4mOhm @ 80A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TO263-3-2
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 230 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5660 pF @ 25 V
Produkt ist nicht verfügbar
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BSC0501NSIATMA1 BSC0501NSIATMA1 Infineon Technologies Infineon-BSC0501NSI-DS-v02_00-EN.pdf?fileId=5546d4624eeb2bc7014ef9e85b6214d2 Description: MOSFET N-CH 30V 29A/100A TDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 29A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 1.9mOhm @ 30A, 10V
FET Feature: Schottky Diode (Body)
Power Dissipation (Max): 2.5W (Ta), 50W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TDSON-8-6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 15 V
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BSC0501NSIATMA1 BSC0501NSIATMA1 Infineon Technologies Infineon-BSC0501NSI-DS-v02_00-EN.pdf?fileId=5546d4624eeb2bc7014ef9e85b6214d2 Description: MOSFET N-CH 30V 29A/100A TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 29A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 1.9mOhm @ 30A, 10V
FET Feature: Schottky Diode (Body)
Power Dissipation (Max): 2.5W (Ta), 50W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TDSON-8-6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 15 V
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111-4183PBF Infineon Technologies Description: IC REG BUCK CTRLR SMD
Produkt ist nicht verfügbar
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KX8664FRIBE KX8664FRIBE Infineon Technologies INFNS11218-1.pdf?t.download=true&u=5oefqw Description: XC800 I-FAMILY 8051 8-BIT MCU
Packaging: Bulk
DigiKey Programmable: Not Verified
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IPB147N03LGATMA1 IPB147N03LGATMA1 Infineon Technologies IP(B,P)147N03L_G.pdf Description: MOSFET N-CH 30V 20A D2PAK
auf Bestellung 18000 Stücke:
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TC397XX256F300SBCKXUMA1 TC397XX256F300SBCKXUMA1 Infineon Technologies Infineon-TriCore_Family_BR-ProductBrochure-v01_00-EN.pdf?fileId=5546d4625d5945ed015dc81f47b436c7 Description: IC MCU 32BIT 16MB FLASH 292LFBGA
Packaging: Tape & Reel (TR)
Package / Case: 292-LFBGA
Mounting Type: Surface Mount
Speed: 300MHz
Program Memory Size: 16MB (16M x 8)
RAM Size: 6.75M x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: TriCore™
Core Size: 32-Bit 6-Core
Voltage - Supply (Vcc/Vdd): 3.3V, 5V
Connectivity: ASC, CANbus, Ethernet, FlexRay, HSSL, I²C, LINbus, MSC, PSI, QSPI, SENT
Peripherals: DMA, I²S, PWM, WDT
Supplier Device Package: PG-LFBGA-292-10
Part Status: Obsolete
DigiKey Programmable: Not Verified
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TC399XX256F300SBCKXUMA1 Infineon Technologies Infineon-TriCore_Family_BR-ProductBrochure-v01_00-EN.pdf?fileId=5546d4625d5945ed015dc81f47b436c7 Description: IC MCU 32BIT 16MB FLASH 516LFBGA
Packaging: Tape & Reel (TR)
Package / Case: 516-LFBGA
Mounting Type: Surface Mount
Speed: 300MHz
Program Memory Size: 16MB (16M x 8)
RAM Size: 6.75M x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: TriCore™
Core Size: 32-Bit 6-Core
Voltage - Supply (Vcc/Vdd): 3.3V, 5V
Connectivity: ASC, CANbus, Ethernet, FlexRay, HSSL, I²C, LINbus, MSC, PSI, QSPI, SENT
Peripherals: DMA, I²S, PWM, WDT
Supplier Device Package: PG-LFBGA-516-10
Part Status: Obsolete
DigiKey Programmable: Not Verified
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XC87813FFA5VACKXUMA1 XC87813FFA5VACKXUMA1 Infineon Technologies Infineon-XC87X-DS-v01_05-en.pdf?folderId=db3a304412b407950112b40c497b0af6&fileId=db3a30432239cccd01231293d56908b1&ack=t Description: IC MCU 8BIT 52KB FLASH 64LQFP
Packaging: Bulk
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Speed: 27MHz
Program Memory Size: 52KB (52K x 8)
RAM Size: 3.25K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: XC800
Data Converters: A/D 8x10b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 4.5V ~ 5.5V
Connectivity: SPI, SSI, UART/USART
Peripherals: Brown-out Detect/Reset, POR, PWM, WDT
Supplier Device Package: PG-LQFP-64-4
Part Status: Not For New Designs
Number of I/O: 40
DigiKey Programmable: Not Verified
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TC212S8F133SCACKXUMA1 TC212S8F133SCACKXUMA1 Infineon Technologies Infineon-TC21x22x_AC-DS-v01_00-EN.pdf?fileId=5546d462694c98b401695304b96c03ac Description: IC MCU 32BIT 512KB FLASH 80TQFP
Packaging: Tape & Reel (TR)
Package / Case: 80-TQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 133MHz
Program Memory Size: 512KB (512K x 8)
RAM Size: 56K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
EEPROM Size: 64K x 8
Core Processor: TriCore™
Data Converters: A/D 24x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 3.3V
Connectivity: CANbus, LINbus, QSPI
Peripherals: DMA, WDT
Supplier Device Package: PG-TQFP-80-7
Part Status: Active
Number of I/O: 59
DigiKey Programmable: Not Verified
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TC212S8F133SCACKXUMA1 TC212S8F133SCACKXUMA1 Infineon Technologies Infineon-TC21x22x_AC-DS-v01_00-EN.pdf?fileId=5546d462694c98b401695304b96c03ac Description: IC MCU 32BIT 512KB FLASH 80TQFP
Packaging: Cut Tape (CT)
Package / Case: 80-TQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 133MHz
Program Memory Size: 512KB (512K x 8)
RAM Size: 56K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
EEPROM Size: 64K x 8
Core Processor: TriCore™
Data Converters: A/D 24x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 3.3V
Connectivity: CANbus, LINbus, QSPI
Peripherals: DMA, WDT
Supplier Device Package: PG-TQFP-80-7
Part Status: Active
Number of I/O: 59
DigiKey Programmable: Not Verified
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250+21.02 EUR
500+20.52 EUR
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TC214L8F133NACKXUMA1 TC214L8F133NACKXUMA1 Infineon Technologies Infineon-TC21x22x_AC-DS-v01_00-EN.pdf?fileId=5546d462694c98b401695304b96c03ac Description: IC MCU 32BIT 512KB FLASH 144TQFP
Packaging: Cut Tape (CT)
Package / Case: 144-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 133MHz
Program Memory Size: 512KB (512K x 8)
RAM Size: 96K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
EEPROM Size: 96K x 8
Core Processor: TriCore™
Data Converters: A/D 24x12b SAR
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 3.3V
Connectivity: CANbus, LINbus, QSPI
Peripherals: DMA, WDT
Supplier Device Package: PG-TQFP-144-27
Number of I/O: 120
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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PEF22810TV2.1 Infineon Technologies Description: IC LINE DRIVER
Packaging: Bulk
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PEB22811HV1.3 Infineon Technologies Description: IC LINE DRIVER CHIP
Packaging: Bulk
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PEF22812FV2.2 Infineon Technologies Description: IC LINE DRIVER CHIP
Packaging: Bulk
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PEF22818FV1.1 Infineon Technologies Description: IC TRANS SINGLE PORT DIGITAL
Packaging: Bulk
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PEF22812ELV2.2 Infineon Technologies Description: IC LINE DRIVER CHIP
Packaging: Bulk
auf Bestellung 3140 Stücke:
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KP214E3022XTMA1 Infineon Technologies Description: INTEGRATED PRESSURE SENS
Packaging: Tape & Reel (TR)
Part Status: Obsolete
Produkt ist nicht verfügbar
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IKWH20N65WR6XKSA1 IKWH20N65WR6XKSA1 Infineon Technologies Infineon-IKWH20N65WR6-DataSheet-v01_00-EN.pdf?fileId=5546d46279cccfdb0179ce6381926fd1 Description: IGBT TRENCH FS 650V 55A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 20A
Supplier Device Package: PG-TO247-3-32
IGBT Type: Trench Field Stop
Gate Charge: 97 nC
Part Status: Active
Current - Collector (Ic) (Max): 55 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 60 A
Power - Max: 136 W
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4+5.03 EUR
30+2.73 EUR
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IKWH70N65WR6XKSA1 IKWH70N65WR6XKSA1 Infineon Technologies Infineon-IKWH70N65WR6-DataSheet-v01_00-EN.pdf?fileId=5546d46279cccfdb0179ce63d1626fe1 Description: IGBT TRENCH FS 650V 122A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.85V @ 15V, 70A
Supplier Device Package: PG-TO247-3-32
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 42ns/378ns
Switching Energy: 2.2mJ (on), 1.07mJ (off)
Test Condition: 400V, 70A, 15Ohm, 15V
Gate Charge: 269 nC
Part Status: Active
Current - Collector (Ic) (Max): 122 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 210 A
Power - Max: 290 W
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30+4.68 EUR
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TLI4971A050T5UE0001XUMA1 TLI4971A050T5UE0001XUMA1 Infineon Technologies Infineon-TLI4971_25_50_75_120-DataSheet-v01_20-EN.pdf?fileId=5546d462700c0ae6017034d731621b09 Description: SENSOR CURRENT HALL 50A 8TISON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Polarization: Unidirectional
Sensitivity: 24mV/A
Mounting Type: Surface Mount
Output: Ratiometric, Voltage
Frequency: DC ~ 240kHz
Operating Temperature: -40°C ~ 105°C
Voltage - Supply: 3.1V ~ 3.5V
Response Time: 250ns
Sensor Type: Hall Effect, Open Loop
Linearity: ±2.25%
For Measuring: AC/DC
Current - Supply (Max): 25mA
Current - Sensing: 50A
Supplier Device Package: PG-TISON-8-5
Grade: Automotive
Part Status: Active
Number of Channels: 1
Qualification: AEC-Q100
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10+5.46 EUR
25+5.17 EUR
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100+4.78 EUR
500+4.41 EUR
1000+4.37 EUR
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BSC152N10NSFG BSC152N10NSFG Infineon Technologies INFNS16198-1.pdf?t.download=true&u=5oefqw Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.4A (Ta), 63A (Tc)
Rds On (Max) @ Id, Vgs: 15.2mOhm @ 25A, 10V
Power Dissipation (Max): 114W (Tc)
Vgs(th) (Max) @ Id: 4V @ 72µA
Supplier Device Package: PG-TDSON-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 50 V
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BSC118N10NSG BSC118N10NSG Infineon Technologies INFNS16721-1.pdf?t.download=true&u=5oefqw Description: BSC118N10 - 12V-300V N-CHANNEL P
Packaging: Bulk
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 71A (Tc)
Rds On (Max) @ Id, Vgs: 11.8mOhm @ 50A, 10V
Power Dissipation (Max): 114W (Tc)
Vgs(th) (Max) @ Id: 4V @ 70µA
Supplier Device Package: PG-TDSON-8-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3700 pF @ 50 V
Produkt ist nicht verfügbar
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FP10R12W1T7PB3BPSA1 FP10R12W1T7PB3BPSA1 Infineon Technologies Description: LOW POWER EASY
Packaging: Tray
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1+80.13 EUR
10+71.39 EUR
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FP10R12YT3BOMA1 Infineon Technologies Description: MOD IGBT LOW PWR EASY2-1
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FP10R12YT3B4BOMA1 Infineon Technologies Description: MOD IGBT LOW PWR EASY2-1
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FP25R12KT4_B15 Infineon Technologies INFNS28465-1.pdf?t.download=true&u=5oefqw Description: FP25R12 - IGBT MODULE
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Three Phase Bridge Rectifier
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.25V @ 15V, 25A
NTC Thermistor: Yes
Supplier Device Package: AG-ECONO2-5-1
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 28 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 160 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 1.45 nF @ 25 V
auf Bestellung 150 Stücke:
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6+94.43 EUR
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FP25R12W2T7B11BPSA1 FP25R12W2T7B11BPSA1 Infineon Technologies Infineon-FP25R12W2T7_B11-DataSheet-v02_00-EN.pdf?fileId=5546d46270c4f93e0170f1861a4f72e6 Description: LOW POWER EASY
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Three Phase Bridge Rectifier
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.6V @ 15V, 25A
NTC Thermistor: Yes
Supplier Device Package: AG-EASY2B-2
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 25 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 5.6 µA
Input Capacitance (Cies) @ Vce: 4.77 nF @ 25 V
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FP25R12KT3BPSA1 FP25R12KT3BPSA1 Infineon Technologies Infineon-FP25R12KT3-DS-v02_00-EN.pdf?fileId=db3a304412b407950112b4316c90543e Description: LOW POWER ECONO
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Three Phase Bridge Rectifier
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 125°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 25A
NTC Thermistor: Yes
Supplier Device Package: AG-ECONO2-8
Part Status: Active
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 105 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 1.8 nF @ 25 V
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1+121.53 EUR
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FP25R12KS4CBOSA1 FP25R12KS4CBOSA1 Infineon Technologies Infineon-FP25R12KS4C-DS-v02_00-en_de.pdf?fileId=db3a304412b407950112b430a5e6516d Description: IGBT MOD 1200V 40A 230W
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -40°C ~ 125°C
Vce(on) (Max) @ Vge, Ic: 3.7V @ 15V, 25A
NTC Thermistor: Yes
Supplier Device Package: Module
Part Status: Last Time Buy
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 230 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 1.5 nF @ 25 V
Produkt ist nicht verfügbar
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IRGC75B60KB Infineon Technologies Short_Form_Cat_2016.pdf Description: IGBT CHIP
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 75A
Supplier Device Package: Die
IGBT Type: NPT
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Produkt ist nicht verfügbar
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BSZ0704LSATMA1 BSZ0704LSATMA1 Infineon Technologies Infineon-BSZ0704LS-DataSheet-v02_01-EN.pdf?fileId=5546d462700c0ae601708b9036f31424 Description: MOSFET N-CH 60V 11A/40A TSDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs: 9.9mOhm @ 20A, 10V
Power Dissipation (Max): 2.1W (Ta), 36W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 14µA
Supplier Device Package: PG-TDSON-8 FL
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 8.6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 30 V
Produkt ist nicht verfügbar
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BSZ0704LSATMA1 BSZ0704LSATMA1 Infineon Technologies Infineon-BSZ0704LS-DataSheet-v02_01-EN.pdf?fileId=5546d462700c0ae601708b9036f31424 Description: MOSFET N-CH 60V 11A/40A TSDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs: 9.9mOhm @ 20A, 10V
Power Dissipation (Max): 2.1W (Ta), 36W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 14µA
Supplier Device Package: PG-TDSON-8 FL
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 8.6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 30 V
Produkt ist nicht verfügbar
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BSZ0703LSATMA1 BSZ0703LSATMA1 Infineon Technologies Infineon-BSZ0703LS-DataSheet-v02_01-EN.pdf?fileId=5546d4626fc1ce0b016ff09a5e344f7e Description: MOSFET N-CH 60V 40A TSDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 20A, 10V
Power Dissipation (Max): 46W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 20µA
Supplier Device Package: PG-TSDSON-8-26
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 30 V
Produkt ist nicht verfügbar
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TC1766192F80HLBDKXUMA1 TC1766192F80HLBDKXUMA1 Infineon Technologies Infineon-TC1766-DS-v01_00-en.pdf?folderId=db3a304412b407950112b409ae7c0343&fileId=db3a304313553140011368a9b40e0224&ack=t Description: IC MCU 32BIT 1.5MB FLASH 176LQFP
Packaging: Tape & Reel (TR)
Package / Case: 176-LQFP
Mounting Type: Surface Mount
Speed: 80MHz
Program Memory Size: 1.5MB (1.5M x 8)
RAM Size: 108K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
Core Processor: TriCore™
Data Converters: A/D 2x10b, 32x8b/10b/12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.42V ~ 1.58V
Connectivity: ASC, CANbus, MLI, MSC, SSC
Peripherals: DMA, POR, WDT
Supplier Device Package: PG-LQFP-176-2
Part Status: Discontinued at Digi-Key
Number of I/O: 81
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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IPB60R055CFD7ATMA1 Infineon-IPB60R055CFD7-DataSheet-v02_00-EN.pdf?fileId=5546d4626b2d8e69016bb2eb02953007
IPB60R055CFD7ATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 600V 38A TO263-3
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 38A (Tc)
Rds On (Max) @ Id, Vgs: 55mOhm @ 18A, 10V
Power Dissipation (Max): 178W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 900µA
Supplier Device Package: PG-TO263-3-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 79 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3194 pF @ 400 V
auf Bestellung 747 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+12.16 EUR
10+8.23 EUR
100+6 EUR
500+5.05 EUR
Mindestbestellmenge: 2
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IPB60R070CFD7ATMA1 Infineon-IPB60R070CFD7-DataSheet-v02_00-EN.pdf?fileId=5546d4626b2d8e69016bb22a2b8c183d
IPB60R070CFD7ATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 600V 31A TO263-3
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 31A (Tc)
Rds On (Max) @ Id, Vgs: 70mOhm @ 15.1A, 10V
Power Dissipation (Max): 156W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 760µA
Supplier Device Package: PG-TO263-3-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 67 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2721 pF @ 400 V
auf Bestellung 1827 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+9.17 EUR
10+6.43 EUR
100+4.81 EUR
500+4.32 EUR
Mindestbestellmenge: 2
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IPB60R040CFD7ATMA1 Infineon-IPB60R040CFD7-DataSheet-v02_00-EN.pdf?fileId=5546d4626b2d8e69016bb2d82dcf2f30
IPB60R040CFD7ATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 600V 50A TO263-3
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 40mOhm @ 24.9A, 10V
Power Dissipation (Max): 227W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1.25mA
Supplier Device Package: PG-TO263-3-2
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 108 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4351 pF @ 400 V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1000+5.83 EUR
Mindestbestellmenge: 1000
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IPB60R040CFD7ATMA1 Infineon-IPB60R040CFD7-DataSheet-v02_00-EN.pdf?fileId=5546d4626b2d8e69016bb2d82dcf2f30
IPB60R040CFD7ATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 600V 50A TO263-3
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 40mOhm @ 24.9A, 10V
Power Dissipation (Max): 227W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1.25mA
Supplier Device Package: PG-TO263-3-2
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 108 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4351 pF @ 400 V
auf Bestellung 3700 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+13.46 EUR
10+9.16 EUR
100+6.74 EUR
500+5.83 EUR
Mindestbestellmenge: 2
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IPD60R750E6BTMA1 Infineon-IPD60R750E6-DS-v02_02-EN.pdf?fileId=db3a30432a14dd54012a194f52852b08
IPD60R750E6BTMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 600V 5.7A TO252
auf Bestellung 36500 Stücke:
Lieferzeit 10-14 Tag (e)
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IPD60R380E6ATMA2 Infineon--DS-v02_05-EN.pdf?fileId=db3a30433ea3aef6013eb24aa4521c2a
IPD60R380E6ATMA2
Hersteller: Infineon Technologies
Description: MOSFET N-CH 600V 10.6A TO252-3
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10.6A (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 3.8A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 300µA
Supplier Device Package: PG-TO252-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 100 V
auf Bestellung 6650 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
462+1.09 EUR
Mindestbestellmenge: 462
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IPD60R800CEAUMA1 IPD%2CIPA60R800CE.pdf
IPD60R800CEAUMA1
Hersteller: Infineon Technologies
Description: CONSUMER
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.4A (Tc)
Rds On (Max) @ Id, Vgs: 800mOhm @ 2A, 10V
Power Dissipation (Max): 74W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 170µA
Supplier Device Package: PG-TO252-3-344
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 17.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 373 pF @ 100 V
Produkt ist nicht verfügbar
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IPA126N10N3G INFNS27818-1.pdf?t.download=true&u=5oefqw
IPA126N10N3G
Hersteller: Infineon Technologies
Description: 35A, 100V, 0.0126OHM, N-CHANNEL
auf Bestellung 1450 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
399+1.21 EUR
Mindestbestellmenge: 399
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CHL8328-35CRT IR3536,38_CHL8326,28_v1.09_6-21-13.pdf
CHL8328-35CRT
Hersteller: Infineon Technologies
Description: IC REG CTRLR DDR 2OUT 56VQFN
Produkt ist nicht verfügbar
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IAUC41N06S5L100ATMA1 Infineon-IAUC41N06S5L100-DataSheet-v01_00-EN.pdf?fileId=5546d46271bf4f920171f45f332861ae
IAUC41N06S5L100ATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 60V 41A TDSON-8-33
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 41A (Tj)
Rds On (Max) @ Id, Vgs: 10mOhm @ 20A, 10V
Power Dissipation (Max): 42W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 13µA
Supplier Device Package: PG-TDSON-8-33
Part Status: Active
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 16.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1205 pF @ 30 V
auf Bestellung 19868 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5000+0.49 EUR
Mindestbestellmenge: 5000
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ICE5QR1680BGXUMA1 Infineon-ICE5QRxx80BG-DataSheet-v02_10-EN.pdf?fileId=5546d462700c0ae601707f2fe42513ad
ICE5QR1680BGXUMA1
Hersteller: Infineon Technologies
Description: IC OFFLINE SWITCH FLYBACK 12DSO
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.154", 3.90mm Width), 12 Leads
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Internal Switch(s): Yes
Voltage - Breakdown: 800V
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 10V ~ 27V
Supplier Device Package: PG-DSO-12-21
Fault Protection: Current Limiting, Open Loop, Over Load, Over Temperature, Over Voltage
Voltage - Start Up: 16 V
Part Status: Active
Power (Watts): 50 W
Produkt ist nicht verfügbar
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ICE5QR1680BGXUMA1 Infineon-ICE5QRxx80BG-DataSheet-v02_10-EN.pdf?fileId=5546d462700c0ae601707f2fe42513ad
ICE5QR1680BGXUMA1
Hersteller: Infineon Technologies
Description: IC OFFLINE SWITCH FLYBACK 12DSO
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.154", 3.90mm Width), 12 Leads
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Internal Switch(s): Yes
Voltage - Breakdown: 800V
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 10V ~ 27V
Supplier Device Package: PG-DSO-12-21
Fault Protection: Current Limiting, Open Loop, Over Load, Over Temperature, Over Voltage
Voltage - Start Up: 16 V
Part Status: Active
Power (Watts): 50 W
auf Bestellung 1198 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5+3.63 EUR
10+2.68 EUR
25+2.44 EUR
100+2.18 EUR
250+2.06 EUR
500+1.98 EUR
1000+1.92 EUR
Mindestbestellmenge: 5
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IPC302N15N3X7SA1 dgdl?folderId=db3a30434422e00e01442b3248b750f0&fileId=db3a30434422e00e01442b691dc3512f
Hersteller: Infineon Technologies
Description: MV POWER MOS
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Rds On (Max) @ Id, Vgs: 100mOhm @ 2A, 10V
Vgs(th) (Max) @ Id: 4V @ 270µA
Supplier Device Package: Die
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Drain to Source Voltage (Vdss): 150 V
Produkt ist nicht verfügbar
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FZ400R17KE3S4HOSA1 Infineon-FZ400R17KE3-DS-v02_02-EN.pdf?fileId=db3a304412b407950112b43043334fd6
FZ400R17KE3S4HOSA1
Hersteller: Infineon Technologies
Description: IGBT MOD 1700V 620A 2250W
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -40°C ~ 125°C
Vce(on) (Max) @ Vge, Ic: 2.45V @ 15V, 400A
NTC Thermistor: No
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 620 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Power - Max: 2250 W
Current - Collector Cutoff (Max): 3 mA
Input Capacitance (Cies) @ Vce: 36 nF @ 25 V
auf Bestellung 363 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+196.89 EUR
Mindestbestellmenge: 3
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FS225R12KE4BOSA1 Infineon-FS225R12KE4-DS-v02_00-en_de.pdf?fileId=db3a30431689f4420116c9e1a17509c6
FS225R12KE4BOSA1
Hersteller: Infineon Technologies
Description: IGBT MOD 1200V 320A 1100W
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Full Bridge
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 225A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 320 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 1100 W
Current - Collector Cutoff (Max): 3 mA
Input Capacitance (Cies) @ Vce: 13 nF @ 25 V
auf Bestellung 1561 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+578.62 EUR
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FD400R07PE4RB6BOSA1 Infineon-FD400R07PE4R_B6-DS-v03_00-en_de.pdf?fileId=db3a30433a047ba0013a6e432c415fb4
Hersteller: Infineon Technologies
Description: IGBT MOD 650V 460A 1150W
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 400A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 460 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Power - Max: 1150 W
Current - Collector Cutoff (Max): 20 µA
Input Capacitance (Cies) @ Vce: 18.5 nF @ 25 V
auf Bestellung 267 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+253.48 EUR
Mindestbestellmenge: 2
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IPA180N10N3G INFNS27819-1.pdf?t.download=true&u=5oefqw
IPA180N10N3G
Hersteller: Infineon Technologies
Description: 28A, 100V, 0.018OHM, N-CHANNEL,
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 28A, 10V
Power Dissipation (Max): 30W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 35µA
Supplier Device Package: PG-TO220-3-111
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 50 V
auf Bestellung 400 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
400+1.25 EUR
Mindestbestellmenge: 400
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IPDD60R145CFD7XTMA1 Infineon-IPDD60R145CFD7-DataSheet-v02_00-EN.pdf?fileId=5546d4627506bb3201751c2ea92342b7
IPDD60R145CFD7XTMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 600V 24A HDSOP-10
Packaging: Cut Tape (CT)
Package / Case: 10-PowerSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 145mOhm @ 6A, 10V
Power Dissipation (Max): 160W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 300µA
Supplier Device Package: PG-HDSOP-10-1
Part Status: Active
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1199 pF @ 400 V
auf Bestellung 3296 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+6.09 EUR
10+4.31 EUR
100+3.12 EUR
500+2.49 EUR
Mindestbestellmenge: 3
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TLE9862QXA40XUMA1 Infineon-TLE9862QXA40-DataSheet-v01_00-EN.pdf?fileId=5546d46274f6cd4c0174fcecc8ed52a2
Hersteller: Infineon Technologies
Description: EMBEDDED POWER
Packaging: Cut Tape (CT)
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: LINbus, SPI, SSC, UART/USART
RAM Size: 8K x 8
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 5.5V ~ 27V
Controller Series: TLE986x
Program Memory Type: FLASH (256kB)
Core Processor: ARM® Cortex®-M3
Supplier Device Package: PG-VQFN-48-29
Number of I/O: 10
DigiKey Programmable: Not Verified
Grade: Automotive
Qualification: AEC-Q100
auf Bestellung 4895 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+10.68 EUR
10+8.21 EUR
25+7.59 EUR
100+6.91 EUR
250+6.58 EUR
500+6.39 EUR
1000+6.22 EUR
Mindestbestellmenge: 2
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IRFS33N15DTRLP irfs33n15d.pdf
IRFS33N15DTRLP
Hersteller: Infineon Technologies
Description: MOSFET N-CH 150V 33A D2PAK
Produkt ist nicht verfügbar
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SP376251064XTMA1
Hersteller: Infineon Technologies
Description: TIRE PRESSURE SENSOR
Packaging: Bulk
auf Bestellung 7000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
113+4.48 EUR
Mindestbestellmenge: 113
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TT162N16KOFHPSA1 Infineon-TT162N-DS-v01_00-en_de.pdf?fileId=db3a304412b407950112b42f789a4bb5
TT162N16KOFHPSA1
Hersteller: Infineon Technologies
Description: SCR MODULE 1.6KV 260A MODULE
Produkt ist nicht verfügbar
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CY7C1248KV18-400BZXC download
CY7C1248KV18-400BZXC
Hersteller: Infineon Technologies
Description: IC SRAM 36MBIT PARALLEL 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 36Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, DDR II+
Clock Frequency: 400 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (13x15)
Memory Interface: Parallel
Memory Organization: 2M x 18
DigiKey Programmable: Not Verified
auf Bestellung 398 Stücke:
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Anzahl Preis
1+33.02 EUR
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CY7C1265KV18-450BZXC download
CY7C1265KV18-450BZXC
Hersteller: Infineon Technologies
Description: IC SRAM 36MBIT PARALLEL 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 36Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, QDR II+
Clock Frequency: 450 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (13x15)
Memory Interface: Parallel
Memory Organization: 1M x 36
DigiKey Programmable: Not Verified
auf Bestellung 172 Stücke:
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Anzahl Preis
1+37.89 EUR
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TLS850D0TAV50ATMA1 Infineon-TLS850D0TA-DS-v01_00-EN.pdf?fileId=5546d46258fc0bc1015969edb50c4266
TLS850D0TAV50ATMA1
Hersteller: Infineon Technologies
Description: IC REG LIN 5V 500MA PG-TO263-7-1
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 500mA
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 5 µA
Voltage - Input (Max): 40V
Number of Regulators: 1
Supplier Device Package: PG-TO263-7-1
Voltage - Output (Min/Fixed): 5V
Control Features: Delay, Enable, Reset
Grade: Automotive
Part Status: Active
PSRR: 59dB (100Hz)
Voltage Dropout (Max): 0.425V @ 250mA
Protection Features: Over Current, Over Temperature, Short Circuit
Current - Supply (Max): 82 µA
Qualification: AEC-Q100
auf Bestellung 597 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+4.91 EUR
10+3.68 EUR
25+3.38 EUR
100+3.04 EUR
250+2.88 EUR
500+2.78 EUR
Mindestbestellmenge: 4
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IPB100N06S2L05ATMA2 Infineon-IPP_B100N06S2L_05-DS-v01_00-en%5B1%5D.pdf?fileId=db3a304412b407950112b43227e5573c&ack=t
IPB100N06S2L05ATMA2
Hersteller: Infineon Technologies
Description: MOSFET N-CH 55V 100A TO263-3
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 4.4mOhm @ 80A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TO263-3-2
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 230 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5660 pF @ 25 V
Produkt ist nicht verfügbar
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BSC0501NSIATMA1 Infineon-BSC0501NSI-DS-v02_00-EN.pdf?fileId=5546d4624eeb2bc7014ef9e85b6214d2
BSC0501NSIATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 30V 29A/100A TDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 29A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 1.9mOhm @ 30A, 10V
FET Feature: Schottky Diode (Body)
Power Dissipation (Max): 2.5W (Ta), 50W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TDSON-8-6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 15 V
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5000+0.93 EUR
Mindestbestellmenge: 5000
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BSC0501NSIATMA1 Infineon-BSC0501NSI-DS-v02_00-EN.pdf?fileId=5546d4624eeb2bc7014ef9e85b6214d2
BSC0501NSIATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 30V 29A/100A TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 29A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 1.9mOhm @ 30A, 10V
FET Feature: Schottky Diode (Body)
Power Dissipation (Max): 2.5W (Ta), 50W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TDSON-8-6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 15 V
auf Bestellung 11742 Stücke:
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Anzahl Preis
7+2.71 EUR
10+1.84 EUR
100+1.3 EUR
500+1.06 EUR
1000+0.98 EUR
2000+0.93 EUR
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111-4183PBF
Hersteller: Infineon Technologies
Description: IC REG BUCK CTRLR SMD
Produkt ist nicht verfügbar
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KX8664FRIBE INFNS11218-1.pdf?t.download=true&u=5oefqw
KX8664FRIBE
Hersteller: Infineon Technologies
Description: XC800 I-FAMILY 8051 8-BIT MCU
Packaging: Bulk
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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IPB147N03LGATMA1 IP(B,P)147N03L_G.pdf
IPB147N03LGATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 30V 20A D2PAK
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TC397XX256F300SBCKXUMA1 Infineon-TriCore_Family_BR-ProductBrochure-v01_00-EN.pdf?fileId=5546d4625d5945ed015dc81f47b436c7
TC397XX256F300SBCKXUMA1
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 16MB FLASH 292LFBGA
Packaging: Tape & Reel (TR)
Package / Case: 292-LFBGA
Mounting Type: Surface Mount
Speed: 300MHz
Program Memory Size: 16MB (16M x 8)
RAM Size: 6.75M x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: TriCore™
Core Size: 32-Bit 6-Core
Voltage - Supply (Vcc/Vdd): 3.3V, 5V
Connectivity: ASC, CANbus, Ethernet, FlexRay, HSSL, I²C, LINbus, MSC, PSI, QSPI, SENT
Peripherals: DMA, I²S, PWM, WDT
Supplier Device Package: PG-LFBGA-292-10
Part Status: Obsolete
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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TC399XX256F300SBCKXUMA1 Infineon-TriCore_Family_BR-ProductBrochure-v01_00-EN.pdf?fileId=5546d4625d5945ed015dc81f47b436c7
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 16MB FLASH 516LFBGA
Packaging: Tape & Reel (TR)
Package / Case: 516-LFBGA
Mounting Type: Surface Mount
Speed: 300MHz
Program Memory Size: 16MB (16M x 8)
RAM Size: 6.75M x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: TriCore™
Core Size: 32-Bit 6-Core
Voltage - Supply (Vcc/Vdd): 3.3V, 5V
Connectivity: ASC, CANbus, Ethernet, FlexRay, HSSL, I²C, LINbus, MSC, PSI, QSPI, SENT
Peripherals: DMA, I²S, PWM, WDT
Supplier Device Package: PG-LFBGA-516-10
Part Status: Obsolete
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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XC87813FFA5VACKXUMA1 Infineon-XC87X-DS-v01_05-en.pdf?folderId=db3a304412b407950112b40c497b0af6&fileId=db3a30432239cccd01231293d56908b1&ack=t
XC87813FFA5VACKXUMA1
Hersteller: Infineon Technologies
Description: IC MCU 8BIT 52KB FLASH 64LQFP
Packaging: Bulk
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Speed: 27MHz
Program Memory Size: 52KB (52K x 8)
RAM Size: 3.25K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: XC800
Data Converters: A/D 8x10b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 4.5V ~ 5.5V
Connectivity: SPI, SSI, UART/USART
Peripherals: Brown-out Detect/Reset, POR, PWM, WDT
Supplier Device Package: PG-LQFP-64-4
Part Status: Not For New Designs
Number of I/O: 40
DigiKey Programmable: Not Verified
auf Bestellung 8634 Stücke:
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Anzahl Preis
143+3.41 EUR
Mindestbestellmenge: 143
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TC212S8F133SCACKXUMA1 Infineon-TC21x22x_AC-DS-v01_00-EN.pdf?fileId=5546d462694c98b401695304b96c03ac
TC212S8F133SCACKXUMA1
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 512KB FLASH 80TQFP
Packaging: Tape & Reel (TR)
Package / Case: 80-TQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 133MHz
Program Memory Size: 512KB (512K x 8)
RAM Size: 56K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
EEPROM Size: 64K x 8
Core Processor: TriCore™
Data Converters: A/D 24x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 3.3V
Connectivity: CANbus, LINbus, QSPI
Peripherals: DMA, WDT
Supplier Device Package: PG-TQFP-80-7
Part Status: Active
Number of I/O: 59
DigiKey Programmable: Not Verified
auf Bestellung 1800 Stücke:
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Anzahl Preis
1800+18.64 EUR
Mindestbestellmenge: 1800
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TC212S8F133SCACKXUMA1 Infineon-TC21x22x_AC-DS-v01_00-EN.pdf?fileId=5546d462694c98b401695304b96c03ac
TC212S8F133SCACKXUMA1
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 512KB FLASH 80TQFP
Packaging: Cut Tape (CT)
Package / Case: 80-TQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 133MHz
Program Memory Size: 512KB (512K x 8)
RAM Size: 56K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
EEPROM Size: 64K x 8
Core Processor: TriCore™
Data Converters: A/D 24x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 3.3V
Connectivity: CANbus, LINbus, QSPI
Peripherals: DMA, WDT
Supplier Device Package: PG-TQFP-80-7
Part Status: Active
Number of I/O: 59
DigiKey Programmable: Not Verified
auf Bestellung 1800 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+31.54 EUR
10+25.18 EUR
25+23.59 EUR
100+21.85 EUR
250+21.02 EUR
500+20.52 EUR
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TC214L8F133NACKXUMA1 Infineon-TC21x22x_AC-DS-v01_00-EN.pdf?fileId=5546d462694c98b401695304b96c03ac
TC214L8F133NACKXUMA1
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 512KB FLASH 144TQFP
Packaging: Cut Tape (CT)
Package / Case: 144-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 133MHz
Program Memory Size: 512KB (512K x 8)
RAM Size: 96K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
EEPROM Size: 96K x 8
Core Processor: TriCore™
Data Converters: A/D 24x12b SAR
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 3.3V
Connectivity: CANbus, LINbus, QSPI
Peripherals: DMA, WDT
Supplier Device Package: PG-TQFP-144-27
Number of I/O: 120
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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PEF22810TV2.1
Hersteller: Infineon Technologies
Description: IC LINE DRIVER
Packaging: Bulk
auf Bestellung 43425 Stücke:
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Anzahl Preis
222+2.25 EUR
Mindestbestellmenge: 222
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PEB22811HV1.3
Hersteller: Infineon Technologies
Description: IC LINE DRIVER CHIP
Packaging: Bulk
auf Bestellung 2453 Stücke:
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Anzahl Preis
79+6.38 EUR
Mindestbestellmenge: 79
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PEF22812FV2.2
Hersteller: Infineon Technologies
Description: IC LINE DRIVER CHIP
Packaging: Bulk
auf Bestellung 378 Stücke:
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Anzahl Preis
23+21.81 EUR
Mindestbestellmenge: 23
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PEF22818FV1.1
Hersteller: Infineon Technologies
Description: IC TRANS SINGLE PORT DIGITAL
Packaging: Bulk
auf Bestellung 28508 Stücke:
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Anzahl Preis
21+24.21 EUR
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PEF22812ELV2.2
Hersteller: Infineon Technologies
Description: IC LINE DRIVER CHIP
Packaging: Bulk
auf Bestellung 3140 Stücke:
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Anzahl Preis
17+29.44 EUR
Mindestbestellmenge: 17
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KP214E3022XTMA1
Hersteller: Infineon Technologies
Description: INTEGRATED PRESSURE SENS
Packaging: Tape & Reel (TR)
Part Status: Obsolete
Produkt ist nicht verfügbar
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IKWH20N65WR6XKSA1 Infineon-IKWH20N65WR6-DataSheet-v01_00-EN.pdf?fileId=5546d46279cccfdb0179ce6381926fd1
IKWH20N65WR6XKSA1
Hersteller: Infineon Technologies
Description: IGBT TRENCH FS 650V 55A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 20A
Supplier Device Package: PG-TO247-3-32
IGBT Type: Trench Field Stop
Gate Charge: 97 nC
Part Status: Active
Current - Collector (Ic) (Max): 55 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 60 A
Power - Max: 136 W
auf Bestellung 68 Stücke:
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Anzahl Preis
4+5.03 EUR
30+2.73 EUR
Mindestbestellmenge: 4
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IKWH70N65WR6XKSA1 Infineon-IKWH70N65WR6-DataSheet-v01_00-EN.pdf?fileId=5546d46279cccfdb0179ce63d1626fe1
IKWH70N65WR6XKSA1
Hersteller: Infineon Technologies
Description: IGBT TRENCH FS 650V 122A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.85V @ 15V, 70A
Supplier Device Package: PG-TO247-3-32
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 42ns/378ns
Switching Energy: 2.2mJ (on), 1.07mJ (off)
Test Condition: 400V, 70A, 15Ohm, 15V
Gate Charge: 269 nC
Part Status: Active
Current - Collector (Ic) (Max): 122 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 210 A
Power - Max: 290 W
auf Bestellung 100 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+8.32 EUR
30+4.68 EUR
Mindestbestellmenge: 3
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TLI4971A050T5UE0001XUMA1 Infineon-TLI4971_25_50_75_120-DataSheet-v01_20-EN.pdf?fileId=5546d462700c0ae6017034d731621b09
TLI4971A050T5UE0001XUMA1
Hersteller: Infineon Technologies
Description: SENSOR CURRENT HALL 50A 8TISON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Polarization: Unidirectional
Sensitivity: 24mV/A
Mounting Type: Surface Mount
Output: Ratiometric, Voltage
Frequency: DC ~ 240kHz
Operating Temperature: -40°C ~ 105°C
Voltage - Supply: 3.1V ~ 3.5V
Response Time: 250ns
Sensor Type: Hall Effect, Open Loop
Linearity: ±2.25%
For Measuring: AC/DC
Current - Supply (Max): 25mA
Current - Sensing: 50A
Supplier Device Package: PG-TISON-8-5
Grade: Automotive
Part Status: Active
Number of Channels: 1
Qualification: AEC-Q100
auf Bestellung 2270 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+6.37 EUR
5+5.71 EUR
10+5.46 EUR
25+5.17 EUR
50+4.97 EUR
100+4.78 EUR
500+4.41 EUR
1000+4.37 EUR
Mindestbestellmenge: 3
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BSC152N10NSFG INFNS16198-1.pdf?t.download=true&u=5oefqw
BSC152N10NSFG
Hersteller: Infineon Technologies
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.4A (Ta), 63A (Tc)
Rds On (Max) @ Id, Vgs: 15.2mOhm @ 25A, 10V
Power Dissipation (Max): 114W (Tc)
Vgs(th) (Max) @ Id: 4V @ 72µA
Supplier Device Package: PG-TDSON-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 50 V
auf Bestellung 9249 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
204+2.28 EUR
Mindestbestellmenge: 204
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BSC118N10NSG INFNS16721-1.pdf?t.download=true&u=5oefqw
BSC118N10NSG
Hersteller: Infineon Technologies
Description: BSC118N10 - 12V-300V N-CHANNEL P
Packaging: Bulk
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 71A (Tc)
Rds On (Max) @ Id, Vgs: 11.8mOhm @ 50A, 10V
Power Dissipation (Max): 114W (Tc)
Vgs(th) (Max) @ Id: 4V @ 70µA
Supplier Device Package: PG-TDSON-8-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3700 pF @ 50 V
Produkt ist nicht verfügbar
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FP10R12W1T7PB3BPSA1
FP10R12W1T7PB3BPSA1
Hersteller: Infineon Technologies
Description: LOW POWER EASY
Packaging: Tray
auf Bestellung 30 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+80.13 EUR
10+71.39 EUR
30+67.14 EUR
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FP10R12YT3BOMA1
Hersteller: Infineon Technologies
Description: MOD IGBT LOW PWR EASY2-1
Produkt ist nicht verfügbar
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FP10R12YT3B4BOMA1
Hersteller: Infineon Technologies
Description: MOD IGBT LOW PWR EASY2-1
Produkt ist nicht verfügbar
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FP25R12KT4_B15 INFNS28465-1.pdf?t.download=true&u=5oefqw
Hersteller: Infineon Technologies
Description: FP25R12 - IGBT MODULE
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Three Phase Bridge Rectifier
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.25V @ 15V, 25A
NTC Thermistor: Yes
Supplier Device Package: AG-ECONO2-5-1
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 28 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 160 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 1.45 nF @ 25 V
auf Bestellung 150 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
6+94.43 EUR
Mindestbestellmenge: 6
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FP25R12W2T7B11BPSA1 Infineon-FP25R12W2T7_B11-DataSheet-v02_00-EN.pdf?fileId=5546d46270c4f93e0170f1861a4f72e6
FP25R12W2T7B11BPSA1
Hersteller: Infineon Technologies
Description: LOW POWER EASY
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Three Phase Bridge Rectifier
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.6V @ 15V, 25A
NTC Thermistor: Yes
Supplier Device Package: AG-EASY2B-2
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 25 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 5.6 µA
Input Capacitance (Cies) @ Vce: 4.77 nF @ 25 V
auf Bestellung 2 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+75.28 EUR
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FP25R12KT3BPSA1 Infineon-FP25R12KT3-DS-v02_00-EN.pdf?fileId=db3a304412b407950112b4316c90543e
FP25R12KT3BPSA1
Hersteller: Infineon Technologies
Description: LOW POWER ECONO
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Three Phase Bridge Rectifier
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 125°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 25A
NTC Thermistor: Yes
Supplier Device Package: AG-ECONO2-8
Part Status: Active
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 105 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 1.8 nF @ 25 V
auf Bestellung 7 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+121.53 EUR
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FP25R12KS4CBOSA1 Infineon-FP25R12KS4C-DS-v02_00-en_de.pdf?fileId=db3a304412b407950112b430a5e6516d
FP25R12KS4CBOSA1
Hersteller: Infineon Technologies
Description: IGBT MOD 1200V 40A 230W
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -40°C ~ 125°C
Vce(on) (Max) @ Vge, Ic: 3.7V @ 15V, 25A
NTC Thermistor: Yes
Supplier Device Package: Module
Part Status: Last Time Buy
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 230 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 1.5 nF @ 25 V
Produkt ist nicht verfügbar
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IRGC75B60KB Short_Form_Cat_2016.pdf
Hersteller: Infineon Technologies
Description: IGBT CHIP
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 75A
Supplier Device Package: Die
IGBT Type: NPT
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Produkt ist nicht verfügbar
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BSZ0704LSATMA1 Infineon-BSZ0704LS-DataSheet-v02_01-EN.pdf?fileId=5546d462700c0ae601708b9036f31424
BSZ0704LSATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 60V 11A/40A TSDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs: 9.9mOhm @ 20A, 10V
Power Dissipation (Max): 2.1W (Ta), 36W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 14µA
Supplier Device Package: PG-TDSON-8 FL
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 8.6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 30 V
Produkt ist nicht verfügbar
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BSZ0704LSATMA1 Infineon-BSZ0704LS-DataSheet-v02_01-EN.pdf?fileId=5546d462700c0ae601708b9036f31424
BSZ0704LSATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 60V 11A/40A TSDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs: 9.9mOhm @ 20A, 10V
Power Dissipation (Max): 2.1W (Ta), 36W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 14µA
Supplier Device Package: PG-TDSON-8 FL
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 8.6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 30 V
Produkt ist nicht verfügbar
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BSZ0703LSATMA1 Infineon-BSZ0703LS-DataSheet-v02_01-EN.pdf?fileId=5546d4626fc1ce0b016ff09a5e344f7e
BSZ0703LSATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 60V 40A TSDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 20A, 10V
Power Dissipation (Max): 46W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 20µA
Supplier Device Package: PG-TSDSON-8-26
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 30 V
Produkt ist nicht verfügbar
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TC1766192F80HLBDKXUMA1 Infineon-TC1766-DS-v01_00-en.pdf?folderId=db3a304412b407950112b409ae7c0343&fileId=db3a304313553140011368a9b40e0224&ack=t
TC1766192F80HLBDKXUMA1
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 1.5MB FLASH 176LQFP
Packaging: Tape & Reel (TR)
Package / Case: 176-LQFP
Mounting Type: Surface Mount
Speed: 80MHz
Program Memory Size: 1.5MB (1.5M x 8)
RAM Size: 108K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
Core Processor: TriCore™
Data Converters: A/D 2x10b, 32x8b/10b/12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.42V ~ 1.58V
Connectivity: ASC, CANbus, MLI, MSC, SSC
Peripherals: DMA, POR, WDT
Supplier Device Package: PG-LQFP-176-2
Part Status: Discontinued at Digi-Key
Number of I/O: 81
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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