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TLE4274GSV25HTSA2 TLE4274GSV25HTSA2 Infineon Technologies Infineon-TLE4274V33-DS-v02_30-EN.pdf?fileId=5546d46258fc0bc101595f8e72d51f99 Description: IC REG LIN 2.5V 400MA SOT223-4
Supplier Device Package: PG-SOT223-4
Number of Regulators: 1
Voltage - Input (Max): 40V
Current - Quiescent (Iq): 220 µA
Output Configuration: Positive
Operating Temperature: -40°C ~ 150°C (TJ)
Current - Output: 400mA
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: TO-261-4, TO-261AA
Packaging: Bulk
Current - Supply (Max): 30 mA
Protection Features: Over Current, Over Temperature, Reverse Polarity, Short Circuit
Voltage Dropout (Max): 2V @ 300mA
PSRR: 60dB (100Hz)
Part Status: Discontinued at Digi-Key
Voltage - Output (Min/Fixed): 2.5V
Qualification: AEC-Q100
Grade: Automotive
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TLE4278G TLE4278G Infineon Technologies Infineon-TLE4278G-DS-v01_40-EN.pdf?fileId=5546d46258fc0bc101595f8e7fcd1f9f Description: IC REG LINEAR VOLT TLE4278
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SP375531060XTMA1 Infineon Technologies Description: IC TPMS & INERTIA 14DSOSP
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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BSC882N03MSGATMA1 BSC882N03MSGATMA1 Infineon Technologies BSC882N03MS_G.pdf Description: MOSFET N-CH 34V 22A/100A TDSON
Packaging: Bulk
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 2.6mOhm @ 30A, 10V
Power Dissipation (Max): 2.5W (Ta), 69W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TDSON-8-1
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 34 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4300 pF @ 15 V
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WCDSC006XUMA1 WCDSC006XUMA1 Infineon Technologies Infineon-WCDSC006-DataSheet-v02_02-EN.pdf?fileId=5546d4626e651a41016e88a5f0511c84 Description: IC HALF BRIDGE DRIVER 2A 10WSON
Packaging: Cut Tape (CT)
Package / Case: 10-WDFN Exposed Pad
Mounting Type: Surface Mount
Interface: Logic, PWM
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Half Bridge
Voltage - Supply: 4.75V ~ 5.5V
Rds On (Typ): 800mOhm LS (Max), 2Ohm HS (Max)
Applications: General Purpose
Current - Output / Channel: 2A
Current - Peak Output: 2A
Technology: Power MOSFET
Voltage - Load: 4.75V ~ 5.5V
Supplier Device Package: PG-WSON-10
Fault Protection: Current Limiting, Shoot-Through, UVLO
Load Type: Inductive, Capacitive, Resistive
Part Status: Active
Produkt ist nicht verfügbar
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PVD1354 PVD1354 Infineon Technologies pvd33.pdf Description: SSR RELAY SPST-NO 500MA 0-100V
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm), 4 Leads
Output Type: DC
Mounting Type: Through Hole
Voltage - Input: 1.2VDC
Circuit: SPST-NO (1 Form A)
Operating Temperature: -40°C ~ 85°C
Termination Style: PC Pin
Load Current: 500 mA
Approval Agency: UL
Supplier Device Package: 8-DIP Modified
Voltage - Load: 0 V ~ 100 V
On-State Resistance (Max): 1.5 Ohms
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FP50R12N2T7BPSA1 FP50R12N2T7BPSA1 Infineon Technologies Infineon-FP50R12N2T7-DataSheet-v00_30-EN.pdf?fileId=5546d4627aa5d4f5017b0b105656718c Description: LOW POWER ECONO AG-ECONO2B-711
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Three Phase Bridge Rectifier
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.5V @ 15V, 50A
NTC Thermistor: Yes
Supplier Device Package: AG-ECONO2B
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 50 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 10 µA
Input Capacitance (Cies) @ Vce: 11.1 nF @ 25 V
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FP50R12N2T7B11BPSA1 FP50R12N2T7B11BPSA1 Infineon Technologies Infineon-FP50R12N2T7_B11-DataSheet-v00_10-EN.pdf?fileId=5546d4627aa5d4f5017b0afe65ee717c Description: IGBT MOD 1200V 50A AG-ECONO2B
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Three Phase Bridge Rectifier
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.5V @ 15V, 50A
NTC Thermistor: Yes
Supplier Device Package: AG-ECONO2B
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 50 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 10 µA
Input Capacitance (Cies) @ Vce: 11.1 nF @ 25 V
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FP50R12KT4PB11BPSA1 FP50R12KT4PB11BPSA1 Infineon Technologies Description: MOD IGBT LOW PWR ECONO2-4
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FP50R12KT4GB15BOSA1 FP50R12KT4GB15BOSA1 Infineon Technologies FP50R12KT4G_B15.pdf Description: IGBT MOD 1200V 50A 280W MOD
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 50A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 50 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 280 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 2.8 nF @ 25 V
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FP50R12KT4BOSA1 FP50R12KT4BOSA1 Infineon Technologies Infineon-FP50R12KT4-DS-v02_00-en_de.pdf?fileId=db3a3043163797a601166ca05d0e0f48 Description: FP50R12 - IGBT MODULE
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FF3MR12KM1HOSA1 FF3MR12KM1HOSA1 Infineon Technologies FF3MR12KM1H_Rev0.10_10-05-23.pdf Description: MOSFET 2N-CH 1200V 375A AG-62MM
Supplier Device Package: AG-62MM
Vgs(th) (Max) @ Id: 5.15V @ 168mA
Gate Charge (Qg) (Max) @ Vgs: 1000nC @ 15V
Rds On (Max) @ Id, Vgs: 2.83mOhm @ 375A, 15V
Input Capacitance (Ciss) (Max) @ Vds: 29800pF @ 25V
Current - Continuous Drain (Id) @ 25°C: 375A (Tc)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Technology: Silicon Carbide (SiC)
Operating Temperature: -40°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Half Bridge)
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Tray
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FF3MR12KM1PHOSA1 FF3MR12KM1PHOSA1 Infineon Technologies Infineon-FF3MR12KM1P-DataSheet-v02_00-EN.pdf?fileId=5546d46272aa54c00172bca4a81156a7 Description: MOSFET 2N-CH 1200V 375A AG-62MM
Supplier Device Package: AG-62MM
Vgs(th) (Max) @ Id: 5.15V @ 168mA
Gate Charge (Qg) (Max) @ Vgs: 1000nC @ 15V
Rds On (Max) @ Id, Vgs: 2.83mOhm @ 375A, 15V
Input Capacitance (Ciss) (Max) @ Vds: 29800pF @ 25V
Current - Continuous Drain (Id) @ 25°C: 375A (Tc)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Technology: Silicon Carbide (SiC)
Operating Temperature: -40°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Half Bridge)
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Tray
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IMC101TF048XUMA1 IMC101TF048XUMA1 Infineon Technologies Infineon-IMC100-DataSheet-v01_06-EN.pdf?fileId=5546d46265487f7b016584a0147e7660 Description: PMSM/BLDC MOTOR CONTROLLER
Packaging: Tape & Reel (TR)
Package / Case: 48-LQFP
Mounting Type: Surface Mount
Function: Controller - Commutation, Direction Management
Current - Output: 50mA
Interface: Analog, PWM
Operating Temperature: -40°C ~ 105°C (TA)
Output Configuration: Half Bridge (3)
Voltage - Supply: 5.5V ~ 40V
Applications: Home Appliance
Technology: CMOS
Supplier Device Package: PG-LQFP-48-10
Motor Type - AC, DC: AC, Synchronous
Part Status: Active
Produkt ist nicht verfügbar
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IMC102TF048XUMA1 IMC102TF048XUMA1 Infineon Technologies Infineon-IMC100-DataSheet-v01_06-EN.pdf?fileId=5546d46265487f7b016584a0147e7660 Description: PMSM/BLDC MOTOR & PFC CONTROLLER
Packaging: Tape & Reel (TR)
Package / Case: 48-LQFP
Mounting Type: Surface Mount
Function: Controller - Commutation, Direction Management
Current - Output: 50mA
Interface: Analog, PWM
Operating Temperature: -40°C ~ 105°C (TA)
Output Configuration: Half Bridge (3)
Voltage - Supply: 5.5V ~ 40V
Applications: Home Appliance
Technology: CMOS
Supplier Device Package: PG-LQFP-48-10
Motor Type - AC, DC: AC, Synchronous
Part Status: Active
Produkt ist nicht verfügbar
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IMC102TF048XUMA1 IMC102TF048XUMA1 Infineon Technologies Infineon-IMC100-DataSheet-v01_06-EN.pdf?fileId=5546d46265487f7b016584a0147e7660 Description: PMSM/BLDC MOTOR & PFC CONTROLLER
Packaging: Cut Tape (CT)
Package / Case: 48-LQFP
Mounting Type: Surface Mount
Function: Controller - Commutation, Direction Management
Current - Output: 50mA
Interface: Analog, PWM
Operating Temperature: -40°C ~ 105°C (TA)
Output Configuration: Half Bridge (3)
Voltage - Supply: 5.5V ~ 40V
Applications: Home Appliance
Technology: CMOS
Supplier Device Package: PG-LQFP-48-10
Motor Type - AC, DC: AC, Synchronous
Part Status: Active
Produkt ist nicht verfügbar
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IMC301AF048XUMA1 IMC301AF048XUMA1 Infineon Technologies Infineon-IMC300_series-DataSheet-v01_02-EN.pdf?fileId=5546d462700c0ae601703d3460782fba Description: IMOTION, PG-LQFP-48
Packaging: Tape & Reel (TR)
Package / Case: 48-LQFP
Mounting Type: Surface Mount
Function: Controller - Speed
Current - Output: 50mA
Interface: CAN, LIN, SPI, UART
Operating Temperature: -40°C ~ 105°C (TA)
Output Configuration: Pre-Driver - Half Bridge (3)
Voltage - Supply: 3V ~ 5.5V
Applications: General Purpose
Technology: NMOS
Supplier Device Package: PG-LQFP-48-11
Motor Type - Stepper: Multiphase
Motor Type - AC, DC: AC, Synchronous
Part Status: Active
Produkt ist nicht verfügbar
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IMC302AF048XUMA1 IMC302AF048XUMA1 Infineon Technologies Infineon-IMC300_series-DataSheet-v01_02-EN.pdf?fileId=5546d462700c0ae601703d3460782fba Description: IMOTION, PG-LQFP-48
Packaging: Tape & Reel (TR)
Package / Case: 48-LQFP
Mounting Type: Surface Mount
Function: Controller - Speed
Current - Output: 50mA
Interface: CAN, LIN, SPI, UART
Operating Temperature: -40°C ~ 105°C (TA)
Output Configuration: Pre-Driver - Half Bridge (3)
Voltage - Supply: 3V ~ 5.5V
Applications: General Purpose
Technology: NMOS
Supplier Device Package: PG-LQFP-48-11
Motor Type - Stepper: Multiphase
Motor Type - AC, DC: AC, Synchronous
Part Status: Active
Produkt ist nicht verfügbar
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TLE4274DV50 TLE4274DV50 Infineon Technologies Infineon-TLE42744-DS-v01_30-EN.pdf?fileId=5546d46258fc0bc101595f8e563c1f86 Description: IC REG LINEAR VOLT TLE4274
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BB565H7902 BB565H7902 Infineon Technologies INFNS16373-1.pdf?t.download=true&u=5oefqw Description: VARIABLE CAPACITANCE DIODE
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TLE8457ASJXUMA1 TLE8457ASJXUMA1 Infineon Technologies Infineon-TLE8457-DS-v01_00-EN.pdf?fileId=5546d46259d9a4bf015a3d3694ae6179 Description: TLE8457 - AUTOMOTIVE LIN TRANSCE
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PBM99024/1MSAP1C Infineon Technologies Description: INFINEON PBM990241MS - TSO10-3
Packaging: Bulk
Part Status: Active
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BCR191WH6327XTSA1 BCR191WH6327XTSA1 Infineon Technologies bcr191series.pdf?folderId=db3a30431400ef68011406f3ddb1012e&fileId=db3a30431428a3730114404180e802d7 Description: TRANS PREBIAS PNP 50V SOT323
Packaging: Bulk
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 5mA, 5V
Supplier Device Package: PG-SOT323
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 250 mW
Frequency - Transition: 200 MHz
Resistor - Base (R1): 22 kOhms
Resistor - Emitter Base (R2): 22 kOhms
Resistors Included: R1 and R2
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BCR196WH6327 BCR196WH6327 Infineon Technologies INFNS11619-1.pdf?t.download=true&u=5oefqw Description: BIPOLAR DIGITAL TRANSISTOR
Packaging: Bulk
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 5mA, 5V
Supplier Device Package: PG-SOT323-3
Part Status: Active
Current - Collector (Ic) (Max): 70 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 250 mW
Frequency - Transition: 150 MHz
Resistor - Base (R1): 47 kOhms
Resistor - Emitter Base (R2): 22 kOhms
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MA11144833NDSA1 Infineon Technologies Description: A-PCB MA111 W44833
Produkt ist nicht verfügbar
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PEF22822ELV2.2 Infineon Technologies Description: IC 10BASES-D DIGITAL CHIP
Packaging: Bulk
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IRF7316 IRF7316 Infineon Technologies IRF7316.pdf Description: MOSFET 2P-CH 30V 4.9A 8-SOIC
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ISC015N04NM5ATMA1 ISC015N04NM5ATMA1 Infineon Technologies Infineon-ISC015N04NM5-DataSheet-v02_01-EN.pdf?fileId=5546d46271104011017110e4302e0001 Description: 40V 1.5M OPTIMOS MOSFET SUPERSO8
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 33A (Ta), 206A (Tc)
Rds On (Max) @ Id, Vgs: 1.5mOhm @ 50A, 10V
Power Dissipation (Max): 3W (Ta), 115W (Tc)
Vgs(th) (Max) @ Id: 3.4V @ 60µA
Supplier Device Package: PG-TDSON-8 FL
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 67 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4800 pF @ 20 V
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ISC015N04NM5ATMA1 ISC015N04NM5ATMA1 Infineon Technologies Infineon-ISC015N04NM5-DataSheet-v02_01-EN.pdf?fileId=5546d46271104011017110e4302e0001 Description: 40V 1.5M OPTIMOS MOSFET SUPERSO8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 33A (Ta), 206A (Tc)
Rds On (Max) @ Id, Vgs: 1.5mOhm @ 50A, 10V
Power Dissipation (Max): 3W (Ta), 115W (Tc)
Vgs(th) (Max) @ Id: 3.4V @ 60µA
Supplier Device Package: PG-TDSON-8 FL
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 67 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4800 pF @ 20 V
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7+3.31 EUR
10+2.09 EUR
100+1.4 EUR
500+1.11 EUR
1000+1.01 EUR
2000+0.93 EUR
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IPB039N10N3GE8197ATMA1 Infineon Technologies INFNS16282-1.pdf?t.download=true&u=5oefqw Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-263-7, D²Pak (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 160A (Tc)
Rds On (Max) @ Id, Vgs: 3.9mOhm @ 100A, 10V
Power Dissipation (Max): 214W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 160µA
Supplier Device Package: PG-TO263-7-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 117 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8410 pF @ 50 V
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STT5000N14P110XPSA1 Infineon Technologies Infineon-STT5000N14P110-DataSheet-v03_04-EN.pdf?fileId=5546d4627956d53f0179846d20f00124 Description: THYRISTOR/THYRISTORMODULES 110 M
Voltage - Off State: 1.4 kV
Current - On State (It (RMS)) (Max): 4780 A
Part Status: Active
Voltage - Gate Trigger (Vgt) (Max): 2 V
Number of SCRs, Diodes: 2 SCRs
Current - Non Rep. Surge 50, 60Hz (Itsm): 44000A @ 50Hz
Current - Gate Trigger (Igt) (Max): 250 mA
Current - Hold (Ih) (Max): 300 mA
Structure: 1-Phase Controller - All SCRs
Operating Temperature: 125°C (TJ)
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Tray
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S29GL128N11FFI010 S29GL128N11FFI010 Infineon Technologies download Description: IC FLASH 128MBIT PARALLEL 64FBGA
auf Bestellung 179 Stücke:
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FS300R12OE4B81BPSA1 FS300R12OE4B81BPSA1 Infineon Technologies Infineon-FS300R12OE4_B81-DataSheet-v03_00-EN.pdf?fileId=5546d4627255dbad0172602942f86c63 Description: MEDIUM POWER ECONO
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 300A
NTC Thermistor: Yes
Supplier Device Package: AG-ECONOPP
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 300 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 3 mA
Input Capacitance (Cies) @ Vce: 18.5 nF @ 25 V
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IPDQ60R010S7XTMA1 IPDQ60R010S7XTMA1 Infineon Technologies DS_IPDQ60R010S7_20240524.pdf Description: HIGH POWER_NEW PG-HDSOP-22
Packaging: Tape & Reel (TR)
Package / Case: 22-PowerBSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 50A, 12V
Power Dissipation (Max): 694W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 3.08mA
Supplier Device Package: PG-HDSOP-22-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 318 nC @ 12 V
Input Capacitance (Ciss) (Max) @ Vds: 11987 pF @ 300 V
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IPDQ60R010S7XTMA1 IPDQ60R010S7XTMA1 Infineon Technologies DS_IPDQ60R010S7_20240524.pdf Description: HIGH POWER_NEW PG-HDSOP-22
Packaging: Cut Tape (CT)
Package / Case: 22-PowerBSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 50A, 12V
Power Dissipation (Max): 694W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 3.08mA
Supplier Device Package: PG-HDSOP-22-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 318 nC @ 12 V
Input Capacitance (Ciss) (Max) @ Vds: 11987 pF @ 300 V
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IPDQ60R010S7AXTMA1 IPDQ60R010S7AXTMA1 Infineon Technologies DS_IPDQ60R010S7A_20240524.pdf Description: AUTOMOTIVE PG-HDSOP-22
Packaging: Tape & Reel (TR)
Package / Case: 22-PowerBSOP Module
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 50A, 12V
Power Dissipation (Max): 694W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 3.08mA
Supplier Device Package: PG-HDSOP-22-1
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 318 nC @ 12 V
Input Capacitance (Ciss) (Max) @ Vds: 11987 pF @ 300 V
Qualification: AEC-Q101
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IPDQ60R010S7AXTMA1 IPDQ60R010S7AXTMA1 Infineon Technologies DS_IPDQ60R010S7A_20240524.pdf Description: AUTOMOTIVE PG-HDSOP-22
Packaging: Cut Tape (CT)
Package / Case: 22-PowerBSOP Module
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 50A, 12V
Power Dissipation (Max): 694W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 3.08mA
Supplier Device Package: PG-HDSOP-22-1
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 318 nC @ 12 V
Input Capacitance (Ciss) (Max) @ Vds: 11987 pF @ 300 V
Qualification: AEC-Q101
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PEF20470HV1.1 Infineon Technologies Description: SWITI MTSI-L SWITCHING IC
Packaging: Bulk
Part Status: Active
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PEF2047HV1.2 Infineon Technologies Description: MTSS (MEMORY TIME SWITCH LARGE)
Packaging: Bulk
Part Status: Active
DigiKey Programmable: Not Verified
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6+90.15 EUR
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IR35412MTRPBFAUMA1 IR35412MTRPBFAUMA1 Infineon Technologies LatestGeneration_IntegratedPwrStages_25V_PB_v01_3-21-16.pdf Description: INT. POWERSTAGE/DRIVER
Packaging: Tape & Reel (TR)
Package / Case: 40-VFQFN Exposed Pad
Mounting Type: Surface Mount
Number of Outputs: 2
Voltage - Input: 3.3V
Operating Temperature: -20°C ~ 85°C (TA)
Applications: Controller, DDR, Intel VR12, AMD SVI
Supplier Device Package: 40-QFN (6x6)
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BF 1009SR E6327 BF 1009SR E6327 Infineon Technologies INFNS10885-1.pdf?t.download=true&u=5oefqw Description: RF N-CHANNEL MOSFET
Packaging: Bulk
Package / Case: SOT-143R
Current Rating (Amps): 25mA
Mounting Type: Surface Mount
Frequency: 800MHz
Configuration: N-Channel
Gain: 22dB
Technology: MOSFET
Noise Figure: 1.4dB
Supplier Device Package: PG-SOT-143R-3D
Part Status: Active
Voltage - Rated: 12 V
Voltage - Test: 9 V
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BF1009SRE6327HTSA1 BF1009SRE6327HTSA1 Infineon Technologies BF1009S.pdf Description: RF MOSFET 9V SOT143R
Packaging: Bulk
Package / Case: SOT-143R
Current Rating (Amps): 25mA
Mounting Type: Surface Mount
Frequency: 800MHz
Configuration: N-Channel
Gain: 22dB
Technology: MOSFET (Metal Oxide)
Noise Figure: 1.4dB
Supplier Device Package: PG-SOT-143R-3D
Voltage - Rated: 12 V
Voltage - Test: 9 V
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CY7C1148KV18-400BZXC CY7C1148KV18-400BZXC Infineon Technologies download Description: IC SRAM 18MBIT PARALLEL 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 18Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, DDR II+
Clock Frequency: 400 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (13x15)
Part Status: Active
Memory Interface: Parallel
Memory Organization: 1M x 18
DigiKey Programmable: Not Verified
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0209085P001 Infineon Technologies Description: 0209085P001
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BGA231L7E6327 BGA231L7E6327 Infineon Technologies INFNS16697-1.pdf?t.download=true&u=5oefqw Description: IC AMP GALI 1.55-1.615GHZ TSLP7
Packaging: Bulk
Package / Case: 6-XFDFN Exposed Pad
Mounting Type: Surface Mount
Frequency: 1.55GHz ~ 1.615GHz
RF Type: Galileo, GLONASS, GPS
Voltage - Supply: 1.5V ~ 3.6V
Gain: 16dB
Current - Supply: 4.4mA
Noise Figure: 0.75dB
P1dB: -5dBm
Test Frequency: 1.55GHz ~ 1.615GHz
Supplier Device Package: PG-TSLP-7-1
Part Status: Active
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BGA728L7E6327 Infineon Technologies Description: IC RF AMP GPS 1575MHZ TSLP7-1
Packaging: Bulk
Package / Case: 6-XFDFN Exposed Pad
Mounting Type: Surface Mount
Frequency: 1575MHz
RF Type: GPS
Voltage - Supply: 1.5V ~ 3.3V
Gain: 20dB
Current - Supply: 3.3mA
Noise Figure: 0.75dB
P1dB: -15.5dBm
Test Frequency: 1.575GHz
Supplier Device Package: PG-TSLP-7-1
Part Status: Active
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BGA123N6E6327XTSA1 BGA123N6E6327XTSA1 Infineon Technologies Infineon-BGA123N6-DataSheet-v02_02-EN.pdf?fileId=8ac78c8c7f2a768a017f975b343074f4 Description: IC AMP BEIDOU 1.55-1.615GHZ TSNP
Packaging: Tape & Reel (TR)
Package / Case: 6-XFDFN
Mounting Type: Surface Mount
Frequency: 1.55GHz ~ 1.615GHz
RF Type: Beidou, Galileo, GLONASS, GPS
Voltage - Supply: 1.1V ~ 2.8V
Gain: 21.2dB
Current - Supply: 1.65mA
Noise Figure: 0.75dB
P1dB: -12dBm
Test Frequency: 1.575GHz
Supplier Device Package: PG-TSNP-6-2
Part Status: Active
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BGA123N6E6327XTSA1 BGA123N6E6327XTSA1 Infineon Technologies Infineon-BGA123N6-DataSheet-v02_02-EN.pdf?fileId=8ac78c8c7f2a768a017f975b343074f4 Description: IC AMP BEIDOU 1.55-1.615GHZ TSNP
Packaging: Cut Tape (CT)
Package / Case: 6-XFDFN
Mounting Type: Surface Mount
Frequency: 1.55GHz ~ 1.615GHz
RF Type: Beidou, Galileo, GLONASS, GPS
Voltage - Supply: 1.1V ~ 2.8V
Gain: 21.2dB
Current - Supply: 1.65mA
Noise Figure: 0.75dB
P1dB: -12dBm
Test Frequency: 1.575GHz
Supplier Device Package: PG-TSNP-6-2
Part Status: Active
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BGA125N6E6327XTSA1 BGA125N6E6327XTSA1 Infineon Technologies Infineon-BGA125N6-DataSheet-v02_02-EN.pdf?fileId=8ac78c8c7f2a768a017f975b483c74f7 Description: IC AMP BEIDOU 1.164-1.3GHZ TSNP6
Packaging: Cut Tape (CT)
Package / Case: 6-XFDFN
Mounting Type: Surface Mount
Frequency: 1.164GHz ~ 1.3GHz
RF Type: Beidou, Galileo, GLONASS, GPS
Voltage - Supply: 1.1V ~ 2.8V
Gain: 22.2dB
Current - Supply: 1.45mA
Noise Figure: 0.8dB
P1dB: -12dBm
Test Frequency: 1.164GHz ~ 1.3GHz
Supplier Device Package: PG-TSNP-6-2
Produkt ist nicht verfügbar
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IFX25001TSV85AKSA1 IFX25001TSV85AKSA1 Infineon Technologies INFNS14793-1.pdf?t.download=true&u=5oefqw Description: IC REG LINEAR VOLTAGE REG
Supplier Device Package: PG-TO220-3-1
Number of Regulators: 1
Voltage - Input (Max): 40V
Current - Quiescent (Iq): 220 µA
Output Configuration: Positive
Operating Temperature: -40°C ~ 125°C
Current - Output: 400mA
Mounting Type: Through Hole
Output Type: Fixed
Package / Case: TO-220-3
Packaging: Bulk
Current - Supply (Max): 30 mA
Protection Features: Over Current, Over Temperature, Reverse Polarity, Short Circuit
Voltage Dropout (Max): 0.5V @ 250mA
PSRR: 60dB (100Hz)
Voltage - Output (Min/Fixed): 10V
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IFX25001TSV85 IFX25001TSV85 Infineon Technologies INFNS14793-1.pdf?t.download=true&u=5oefqw Description: IC REG LINEAR VOLTAGE REG
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IM240M6Y1BAKMA1 IM240M6Y1BAKMA1 Infineon Technologies IM240-M6xxB.pdf Description: IPM MICRO 3PH DRIVER DIP23
Packaging: Tube
Package / Case: 23-DIP Module (0.573", 14.55mm)
Mounting Type: Through Hole
Configuration: 3 Phase Inverter
Part Status: Obsolete
Produkt ist nicht verfügbar
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BF5020WE6327 Infineon Technologies INFNS13463-1.pdf?t.download=true&u=5oefqw Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: SC-82A, SOT-343
Current Rating (Amps): 100nA
Mounting Type: Surface Mount
Configuration: N-Channel
Gain: 32dB
Technology: MOSFET
Noise Figure: 1.2dB
Supplier Device Package: PG-SOT343-4-1
Part Status: Active
Voltage - Rated: 8 V
Voltage - Test: 5 V
Current - Test: 10 mA
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BF 5020 E6327 BF 5020 E6327 Infineon Technologies fundamentals-of-power-semiconductors Description: RF MOSFET 5V SOT143
Packaging: Tape & Reel (TR)
Package / Case: TO-253-4, TO-253AA
Current Rating (Amps): 25mA
Mounting Type: Surface Mount
Frequency: 800MHz
Configuration: N-Channel
Gain: 26dB
Technology: MOSFET (Metal Oxide)
Noise Figure: 1.2dB
Supplier Device Package: PG-SOT-143-3D
Voltage - Rated: 8 V
Voltage - Test: 5 V
Current - Test: 10 mA
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BF 5020R E6327 BF 5020R E6327 Infineon Technologies fundamentals-of-power-semiconductors Description: RF MOSFET 5V SOT143R
Packaging: Tape & Reel (TR)
Package / Case: SOT-143R
Current Rating (Amps): 25mA
Mounting Type: Surface Mount
Frequency: 800MHz
Configuration: N-Channel
Gain: 26dB
Technology: MOSFET (Metal Oxide)
Noise Figure: 1.2dB
Supplier Device Package: PG-SOT-143R-3D
Voltage - Rated: 8 V
Voltage - Test: 5 V
Current - Test: 10 mA
Produkt ist nicht verfügbar
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IPD14N06S280ATMA2 IPD14N06S280ATMA2 Infineon Technologies INFNS09524-1.pdf?t.download=true&u=5oefqw Description: MOSFET N-CH 55V 17A TO252-31
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 80mOhm @ 7A, 10V
Power Dissipation (Max): 47W (Tc)
Vgs(th) (Max) @ Id: 4V @ 14µA
Supplier Device Package: PG-TO252-3-11
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 293 pF @ 25 V
Qualification: AEC-Q101
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TLE92104232QXXUMA1 TLE92104232QXXUMA1 Infineon Technologies Infineon-TLE92104-232QX-DataSheet-v01_00-EN.pdf?fileId=5546d462758f5bd1017597fe443d3976 Description: IC HALF BRIDGE DRIVER 48VQFN
Features: Charge Pump
Packaging: Cut Tape (CT)
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: Analog, Logic, PWM, SPI
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge (4)
Voltage - Supply: 3V ~ 5.5V
Rds On (Typ): 40Ohm
Applications: DC Motors, General Purpose
Supplier Device Package: PG-VQFN-48-29
Fault Protection: Short Circuit
Grade: Automotive
Part Status: Active
Qualification: AEC-Q100
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EVAL6EDL04N02PRTOBO1 EVAL6EDL04N02PRTOBO1 Infineon Technologies Infineon-Evaluationboard-6EDL04N02PR-ApplicationNotes-v01_00-EN.pdf?fileId=db3a304340155f3d014029b70dc80304 Description: EVAL BOARD FOR 6EDL04N02PR
Packaging: Bulk
Function: Gate Driver
Type: Power Management
Contents: Board(s)
Utilized IC / Part: 6EDL04N02PR
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AUIRS2336STR AUIRS2336STR Infineon Technologies auirs2336s.pdf?fileId=5546d462533600a4015355bfa09e15c6 Description: IC GATE DRVR HALF-BRIDGE 28SOIC
Packaging: Tape & Reel (TR)
Package / Case: 28-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 28-SOIC
Rise / Fall Time (Typ): 125ns, 50ns
Channel Type: 3-Phase
Driven Configuration: Half-Bridge
Number of Drivers: 6
Gate Type: IGBT, MOSFET (N-Channel, P-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Current - Peak Output (Source, Sink): 200mA, 350mA
Grade: Automotive
Part Status: Obsolete
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
Produkt ist nicht verfügbar
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S29GL01GT11TFIV20 S29GL01GT11TFIV20 Infineon Technologies infineon-s29gl01gt-s29gl512t-1-gb-128-mb-512-mb-64-mb-gl-t-mirrorbit-eclipse-flash-datasheet-en.pdf?fileId=8ac78c8c7d0d8da4017d0ed2abb34fce Description: IC FLASH 1GBIT PARALLEL 56TSOP
Packaging: Tray
Package / Case: 56-TFSOP (0.724", 18.40mm Width)
Mounting Type: Surface Mount
Memory Size: 1Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.65V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 56-TSOP
Part Status: Active
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 110 ns
Memory Organization: 128M x 8
DigiKey Programmable: Not Verified
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25+32.99 EUR
91+31.49 EUR
182+30.7 EUR
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546+29.49 EUR
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TLE4274GSV25HTSA2 Infineon-TLE4274V33-DS-v02_30-EN.pdf?fileId=5546d46258fc0bc101595f8e72d51f99
TLE4274GSV25HTSA2
Hersteller: Infineon Technologies
Description: IC REG LIN 2.5V 400MA SOT223-4
Supplier Device Package: PG-SOT223-4
Number of Regulators: 1
Voltage - Input (Max): 40V
Current - Quiescent (Iq): 220 µA
Output Configuration: Positive
Operating Temperature: -40°C ~ 150°C (TJ)
Current - Output: 400mA
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: TO-261-4, TO-261AA
Packaging: Bulk
Current - Supply (Max): 30 mA
Protection Features: Over Current, Over Temperature, Reverse Polarity, Short Circuit
Voltage Dropout (Max): 2V @ 300mA
PSRR: 60dB (100Hz)
Part Status: Discontinued at Digi-Key
Voltage - Output (Min/Fixed): 2.5V
Qualification: AEC-Q100
Grade: Automotive
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TLE4278G Infineon-TLE4278G-DS-v01_40-EN.pdf?fileId=5546d46258fc0bc101595f8e7fcd1f9f
TLE4278G
Hersteller: Infineon Technologies
Description: IC REG LINEAR VOLT TLE4278
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SP375531060XTMA1
Hersteller: Infineon Technologies
Description: IC TPMS & INERTIA 14DSOSP
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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BSC882N03MSGATMA1 BSC882N03MS_G.pdf
BSC882N03MSGATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 34V 22A/100A TDSON
Packaging: Bulk
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 2.6mOhm @ 30A, 10V
Power Dissipation (Max): 2.5W (Ta), 69W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TDSON-8-1
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 34 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4300 pF @ 15 V
auf Bestellung 35000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
547+1.09 EUR
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WCDSC006XUMA1 Infineon-WCDSC006-DataSheet-v02_02-EN.pdf?fileId=5546d4626e651a41016e88a5f0511c84
WCDSC006XUMA1
Hersteller: Infineon Technologies
Description: IC HALF BRIDGE DRIVER 2A 10WSON
Packaging: Cut Tape (CT)
Package / Case: 10-WDFN Exposed Pad
Mounting Type: Surface Mount
Interface: Logic, PWM
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Half Bridge
Voltage - Supply: 4.75V ~ 5.5V
Rds On (Typ): 800mOhm LS (Max), 2Ohm HS (Max)
Applications: General Purpose
Current - Output / Channel: 2A
Current - Peak Output: 2A
Technology: Power MOSFET
Voltage - Load: 4.75V ~ 5.5V
Supplier Device Package: PG-WSON-10
Fault Protection: Current Limiting, Shoot-Through, UVLO
Load Type: Inductive, Capacitive, Resistive
Part Status: Active
Produkt ist nicht verfügbar
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PVD1354 pvd33.pdf
PVD1354
Hersteller: Infineon Technologies
Description: SSR RELAY SPST-NO 500MA 0-100V
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm), 4 Leads
Output Type: DC
Mounting Type: Through Hole
Voltage - Input: 1.2VDC
Circuit: SPST-NO (1 Form A)
Operating Temperature: -40°C ~ 85°C
Termination Style: PC Pin
Load Current: 500 mA
Approval Agency: UL
Supplier Device Package: 8-DIP Modified
Voltage - Load: 0 V ~ 100 V
On-State Resistance (Max): 1.5 Ohms
Produkt ist nicht verfügbar
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FP50R12N2T7BPSA1 Infineon-FP50R12N2T7-DataSheet-v00_30-EN.pdf?fileId=5546d4627aa5d4f5017b0b105656718c
FP50R12N2T7BPSA1
Hersteller: Infineon Technologies
Description: LOW POWER ECONO AG-ECONO2B-711
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Three Phase Bridge Rectifier
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.5V @ 15V, 50A
NTC Thermistor: Yes
Supplier Device Package: AG-ECONO2B
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 50 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 10 µA
Input Capacitance (Cies) @ Vce: 11.1 nF @ 25 V
Produkt ist nicht verfügbar
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FP50R12N2T7B11BPSA1 Infineon-FP50R12N2T7_B11-DataSheet-v00_10-EN.pdf?fileId=5546d4627aa5d4f5017b0afe65ee717c
FP50R12N2T7B11BPSA1
Hersteller: Infineon Technologies
Description: IGBT MOD 1200V 50A AG-ECONO2B
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Three Phase Bridge Rectifier
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.5V @ 15V, 50A
NTC Thermistor: Yes
Supplier Device Package: AG-ECONO2B
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 50 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 10 µA
Input Capacitance (Cies) @ Vce: 11.1 nF @ 25 V
auf Bestellung 7 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1+207.48 EUR
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FP50R12KT4PB11BPSA1
FP50R12KT4PB11BPSA1
Hersteller: Infineon Technologies
Description: MOD IGBT LOW PWR ECONO2-4
Produkt ist nicht verfügbar
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FP50R12KT4GB15BOSA1 FP50R12KT4G_B15.pdf
FP50R12KT4GB15BOSA1
Hersteller: Infineon Technologies
Description: IGBT MOD 1200V 50A 280W MOD
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 50A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 50 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 280 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 2.8 nF @ 25 V
Produkt ist nicht verfügbar
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FP50R12KT4BOSA1 Infineon-FP50R12KT4-DS-v02_00-en_de.pdf?fileId=db3a3043163797a601166ca05d0e0f48
FP50R12KT4BOSA1
Hersteller: Infineon Technologies
Description: FP50R12 - IGBT MODULE
Produkt ist nicht verfügbar
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FF3MR12KM1HOSA1 FF3MR12KM1H_Rev0.10_10-05-23.pdf
FF3MR12KM1HOSA1
Hersteller: Infineon Technologies
Description: MOSFET 2N-CH 1200V 375A AG-62MM
Supplier Device Package: AG-62MM
Vgs(th) (Max) @ Id: 5.15V @ 168mA
Gate Charge (Qg) (Max) @ Vgs: 1000nC @ 15V
Rds On (Max) @ Id, Vgs: 2.83mOhm @ 375A, 15V
Input Capacitance (Ciss) (Max) @ Vds: 29800pF @ 25V
Current - Continuous Drain (Id) @ 25°C: 375A (Tc)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Technology: Silicon Carbide (SiC)
Operating Temperature: -40°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Half Bridge)
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Tray
Produkt ist nicht verfügbar
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FF3MR12KM1PHOSA1 Infineon-FF3MR12KM1P-DataSheet-v02_00-EN.pdf?fileId=5546d46272aa54c00172bca4a81156a7
FF3MR12KM1PHOSA1
Hersteller: Infineon Technologies
Description: MOSFET 2N-CH 1200V 375A AG-62MM
Supplier Device Package: AG-62MM
Vgs(th) (Max) @ Id: 5.15V @ 168mA
Gate Charge (Qg) (Max) @ Vgs: 1000nC @ 15V
Rds On (Max) @ Id, Vgs: 2.83mOhm @ 375A, 15V
Input Capacitance (Ciss) (Max) @ Vds: 29800pF @ 25V
Current - Continuous Drain (Id) @ 25°C: 375A (Tc)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Technology: Silicon Carbide (SiC)
Operating Temperature: -40°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Half Bridge)
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Tray
Produkt ist nicht verfügbar
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IMC101TF048XUMA1 Infineon-IMC100-DataSheet-v01_06-EN.pdf?fileId=5546d46265487f7b016584a0147e7660
IMC101TF048XUMA1
Hersteller: Infineon Technologies
Description: PMSM/BLDC MOTOR CONTROLLER
Packaging: Tape & Reel (TR)
Package / Case: 48-LQFP
Mounting Type: Surface Mount
Function: Controller - Commutation, Direction Management
Current - Output: 50mA
Interface: Analog, PWM
Operating Temperature: -40°C ~ 105°C (TA)
Output Configuration: Half Bridge (3)
Voltage - Supply: 5.5V ~ 40V
Applications: Home Appliance
Technology: CMOS
Supplier Device Package: PG-LQFP-48-10
Motor Type - AC, DC: AC, Synchronous
Part Status: Active
Produkt ist nicht verfügbar
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IMC102TF048XUMA1 Infineon-IMC100-DataSheet-v01_06-EN.pdf?fileId=5546d46265487f7b016584a0147e7660
IMC102TF048XUMA1
Hersteller: Infineon Technologies
Description: PMSM/BLDC MOTOR & PFC CONTROLLER
Packaging: Tape & Reel (TR)
Package / Case: 48-LQFP
Mounting Type: Surface Mount
Function: Controller - Commutation, Direction Management
Current - Output: 50mA
Interface: Analog, PWM
Operating Temperature: -40°C ~ 105°C (TA)
Output Configuration: Half Bridge (3)
Voltage - Supply: 5.5V ~ 40V
Applications: Home Appliance
Technology: CMOS
Supplier Device Package: PG-LQFP-48-10
Motor Type - AC, DC: AC, Synchronous
Part Status: Active
Produkt ist nicht verfügbar
Mindestbestellmenge: 1500 Stücke
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IMC102TF048XUMA1 Infineon-IMC100-DataSheet-v01_06-EN.pdf?fileId=5546d46265487f7b016584a0147e7660
IMC102TF048XUMA1
Hersteller: Infineon Technologies
Description: PMSM/BLDC MOTOR & PFC CONTROLLER
Packaging: Cut Tape (CT)
Package / Case: 48-LQFP
Mounting Type: Surface Mount
Function: Controller - Commutation, Direction Management
Current - Output: 50mA
Interface: Analog, PWM
Operating Temperature: -40°C ~ 105°C (TA)
Output Configuration: Half Bridge (3)
Voltage - Supply: 5.5V ~ 40V
Applications: Home Appliance
Technology: CMOS
Supplier Device Package: PG-LQFP-48-10
Motor Type - AC, DC: AC, Synchronous
Part Status: Active
Produkt ist nicht verfügbar
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IMC301AF048XUMA1 Infineon-IMC300_series-DataSheet-v01_02-EN.pdf?fileId=5546d462700c0ae601703d3460782fba
IMC301AF048XUMA1
Hersteller: Infineon Technologies
Description: IMOTION, PG-LQFP-48
Packaging: Tape & Reel (TR)
Package / Case: 48-LQFP
Mounting Type: Surface Mount
Function: Controller - Speed
Current - Output: 50mA
Interface: CAN, LIN, SPI, UART
Operating Temperature: -40°C ~ 105°C (TA)
Output Configuration: Pre-Driver - Half Bridge (3)
Voltage - Supply: 3V ~ 5.5V
Applications: General Purpose
Technology: NMOS
Supplier Device Package: PG-LQFP-48-11
Motor Type - Stepper: Multiphase
Motor Type - AC, DC: AC, Synchronous
Part Status: Active
Produkt ist nicht verfügbar
Mindestbestellmenge: 1500 Stücke
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IMC302AF048XUMA1 Infineon-IMC300_series-DataSheet-v01_02-EN.pdf?fileId=5546d462700c0ae601703d3460782fba
IMC302AF048XUMA1
Hersteller: Infineon Technologies
Description: IMOTION, PG-LQFP-48
Packaging: Tape & Reel (TR)
Package / Case: 48-LQFP
Mounting Type: Surface Mount
Function: Controller - Speed
Current - Output: 50mA
Interface: CAN, LIN, SPI, UART
Operating Temperature: -40°C ~ 105°C (TA)
Output Configuration: Pre-Driver - Half Bridge (3)
Voltage - Supply: 3V ~ 5.5V
Applications: General Purpose
Technology: NMOS
Supplier Device Package: PG-LQFP-48-11
Motor Type - Stepper: Multiphase
Motor Type - AC, DC: AC, Synchronous
Part Status: Active
Produkt ist nicht verfügbar
Mindestbestellmenge: 1500 Stücke
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TLE4274DV50 Infineon-TLE42744-DS-v01_30-EN.pdf?fileId=5546d46258fc0bc101595f8e563c1f86
TLE4274DV50
Hersteller: Infineon Technologies
Description: IC REG LINEAR VOLT TLE4274
Produkt ist nicht verfügbar
Mindestbestellmenge: 42 Stücke
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BB565H7902 INFNS16373-1.pdf?t.download=true&u=5oefqw
BB565H7902
Hersteller: Infineon Technologies
Description: VARIABLE CAPACITANCE DIODE
Produkt ist nicht verfügbar
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TLE8457ASJXUMA1 Infineon-TLE8457-DS-v01_00-EN.pdf?fileId=5546d46259d9a4bf015a3d3694ae6179
TLE8457ASJXUMA1
Hersteller: Infineon Technologies
Description: TLE8457 - AUTOMOTIVE LIN TRANSCE
Produkt ist nicht verfügbar
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PBM99024/1MSAP1C
Hersteller: Infineon Technologies
Description: INFINEON PBM990241MS - TSO10-3
Packaging: Bulk
Part Status: Active
auf Bestellung 58800 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
260+2.21 EUR
Mindestbestellmenge: 260 Stücke
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BCR191WH6327XTSA1 bcr191series.pdf?folderId=db3a30431400ef68011406f3ddb1012e&fileId=db3a30431428a3730114404180e802d7
BCR191WH6327XTSA1
Hersteller: Infineon Technologies
Description: TRANS PREBIAS PNP 50V SOT323
Packaging: Bulk
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 5mA, 5V
Supplier Device Package: PG-SOT323
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 250 mW
Frequency - Transition: 200 MHz
Resistor - Base (R1): 22 kOhms
Resistor - Emitter Base (R2): 22 kOhms
Resistors Included: R1 and R2
auf Bestellung 303000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
4486+0.12 EUR
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BCR196WH6327 INFNS11619-1.pdf?t.download=true&u=5oefqw
BCR196WH6327
Hersteller: Infineon Technologies
Description: BIPOLAR DIGITAL TRANSISTOR
Packaging: Bulk
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 5mA, 5V
Supplier Device Package: PG-SOT323-3
Part Status: Active
Current - Collector (Ic) (Max): 70 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 250 mW
Frequency - Transition: 150 MHz
Resistor - Base (R1): 47 kOhms
Resistor - Emitter Base (R2): 22 kOhms
auf Bestellung 63000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
7123+0.079 EUR
Mindestbestellmenge: 7123 Stücke
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MA11144833NDSA1
Hersteller: Infineon Technologies
Description: A-PCB MA111 W44833
Produkt ist nicht verfügbar
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PEF22822ELV2.2
Hersteller: Infineon Technologies
Description: IC 10BASES-D DIGITAL CHIP
Packaging: Bulk
auf Bestellung 175 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
20+26.67 EUR
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IRF7316 IRF7316.pdf
IRF7316
Hersteller: Infineon Technologies
Description: MOSFET 2P-CH 30V 4.9A 8-SOIC
auf Bestellung 112 Stücke:
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ISC015N04NM5ATMA1 Infineon-ISC015N04NM5-DataSheet-v02_01-EN.pdf?fileId=5546d46271104011017110e4302e0001
ISC015N04NM5ATMA1
Hersteller: Infineon Technologies
Description: 40V 1.5M OPTIMOS MOSFET SUPERSO8
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 33A (Ta), 206A (Tc)
Rds On (Max) @ Id, Vgs: 1.5mOhm @ 50A, 10V
Power Dissipation (Max): 3W (Ta), 115W (Tc)
Vgs(th) (Max) @ Id: 3.4V @ 60µA
Supplier Device Package: PG-TDSON-8 FL
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 67 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4800 pF @ 20 V
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
5000+0.84 EUR
10000+0.79 EUR
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ISC015N04NM5ATMA1 Infineon-ISC015N04NM5-DataSheet-v02_01-EN.pdf?fileId=5546d46271104011017110e4302e0001
ISC015N04NM5ATMA1
Hersteller: Infineon Technologies
Description: 40V 1.5M OPTIMOS MOSFET SUPERSO8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 33A (Ta), 206A (Tc)
Rds On (Max) @ Id, Vgs: 1.5mOhm @ 50A, 10V
Power Dissipation (Max): 3W (Ta), 115W (Tc)
Vgs(th) (Max) @ Id: 3.4V @ 60µA
Supplier Device Package: PG-TDSON-8 FL
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 67 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4800 pF @ 20 V
auf Bestellung 11580 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
7+3.31 EUR
10+2.09 EUR
100+1.4 EUR
500+1.11 EUR
1000+1.01 EUR
2000+0.93 EUR
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IPB039N10N3GE8197ATMA1 INFNS16282-1.pdf?t.download=true&u=5oefqw
Hersteller: Infineon Technologies
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-263-7, D²Pak (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 160A (Tc)
Rds On (Max) @ Id, Vgs: 3.9mOhm @ 100A, 10V
Power Dissipation (Max): 214W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 160µA
Supplier Device Package: PG-TO263-7-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 117 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8410 pF @ 50 V
Produkt ist nicht verfügbar
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STT5000N14P110XPSA1 Infineon-STT5000N14P110-DataSheet-v03_04-EN.pdf?fileId=5546d4627956d53f0179846d20f00124
Hersteller: Infineon Technologies
Description: THYRISTOR/THYRISTORMODULES 110 M
Voltage - Off State: 1.4 kV
Current - On State (It (RMS)) (Max): 4780 A
Part Status: Active
Voltage - Gate Trigger (Vgt) (Max): 2 V
Number of SCRs, Diodes: 2 SCRs
Current - Non Rep. Surge 50, 60Hz (Itsm): 44000A @ 50Hz
Current - Gate Trigger (Igt) (Max): 250 mA
Current - Hold (Ih) (Max): 300 mA
Structure: 1-Phase Controller - All SCRs
Operating Temperature: 125°C (TJ)
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Tray
Produkt ist nicht verfügbar
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S29GL128N11FFI010 download
S29GL128N11FFI010
Hersteller: Infineon Technologies
Description: IC FLASH 128MBIT PARALLEL 64FBGA
auf Bestellung 179 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
86+11.23 EUR
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FS300R12OE4B81BPSA1 Infineon-FS300R12OE4_B81-DataSheet-v03_00-EN.pdf?fileId=5546d4627255dbad0172602942f86c63
FS300R12OE4B81BPSA1
Hersteller: Infineon Technologies
Description: MEDIUM POWER ECONO
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 300A
NTC Thermistor: Yes
Supplier Device Package: AG-ECONOPP
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 300 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 3 mA
Input Capacitance (Cies) @ Vce: 18.5 nF @ 25 V
auf Bestellung 4 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1+1516.18 EUR
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IPDQ60R010S7XTMA1 DS_IPDQ60R010S7_20240524.pdf
IPDQ60R010S7XTMA1
Hersteller: Infineon Technologies
Description: HIGH POWER_NEW PG-HDSOP-22
Packaging: Tape & Reel (TR)
Package / Case: 22-PowerBSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 50A, 12V
Power Dissipation (Max): 694W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 3.08mA
Supplier Device Package: PG-HDSOP-22-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 318 nC @ 12 V
Input Capacitance (Ciss) (Max) @ Vds: 11987 pF @ 300 V
Produkt ist nicht verfügbar
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IPDQ60R010S7XTMA1 DS_IPDQ60R010S7_20240524.pdf
IPDQ60R010S7XTMA1
Hersteller: Infineon Technologies
Description: HIGH POWER_NEW PG-HDSOP-22
Packaging: Cut Tape (CT)
Package / Case: 22-PowerBSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 50A, 12V
Power Dissipation (Max): 694W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 3.08mA
Supplier Device Package: PG-HDSOP-22-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 318 nC @ 12 V
Input Capacitance (Ciss) (Max) @ Vds: 11987 pF @ 300 V
auf Bestellung 539 Stücke:
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AnzahlPrivatkunde
1+35.66 EUR
10+28.46 EUR
25+26.67 EUR
100+24.69 EUR
250+23.75 EUR
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IPDQ60R010S7AXTMA1 DS_IPDQ60R010S7A_20240524.pdf
IPDQ60R010S7AXTMA1
Hersteller: Infineon Technologies
Description: AUTOMOTIVE PG-HDSOP-22
Packaging: Tape & Reel (TR)
Package / Case: 22-PowerBSOP Module
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 50A, 12V
Power Dissipation (Max): 694W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 3.08mA
Supplier Device Package: PG-HDSOP-22-1
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 318 nC @ 12 V
Input Capacitance (Ciss) (Max) @ Vds: 11987 pF @ 300 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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IPDQ60R010S7AXTMA1 DS_IPDQ60R010S7A_20240524.pdf
IPDQ60R010S7AXTMA1
Hersteller: Infineon Technologies
Description: AUTOMOTIVE PG-HDSOP-22
Packaging: Cut Tape (CT)
Package / Case: 22-PowerBSOP Module
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 50A, 12V
Power Dissipation (Max): 694W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 3.08mA
Supplier Device Package: PG-HDSOP-22-1
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 318 nC @ 12 V
Input Capacitance (Ciss) (Max) @ Vds: 11987 pF @ 300 V
Qualification: AEC-Q101
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PEF20470HV1.1
Hersteller: Infineon Technologies
Description: SWITI MTSI-L SWITCHING IC
Packaging: Bulk
Part Status: Active
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7+76.11 EUR
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PEF2047HV1.2
Hersteller: Infineon Technologies
Description: MTSS (MEMORY TIME SWITCH LARGE)
Packaging: Bulk
Part Status: Active
DigiKey Programmable: Not Verified
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AnzahlPrivatkunde
6+90.15 EUR
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IR35412MTRPBFAUMA1 LatestGeneration_IntegratedPwrStages_25V_PB_v01_3-21-16.pdf
IR35412MTRPBFAUMA1
Hersteller: Infineon Technologies
Description: INT. POWERSTAGE/DRIVER
Packaging: Tape & Reel (TR)
Package / Case: 40-VFQFN Exposed Pad
Mounting Type: Surface Mount
Number of Outputs: 2
Voltage - Input: 3.3V
Operating Temperature: -20°C ~ 85°C (TA)
Applications: Controller, DDR, Intel VR12, AMD SVI
Supplier Device Package: 40-QFN (6x6)
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5000+4.18 EUR
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BF 1009SR E6327 INFNS10885-1.pdf?t.download=true&u=5oefqw
BF 1009SR E6327
Hersteller: Infineon Technologies
Description: RF N-CHANNEL MOSFET
Packaging: Bulk
Package / Case: SOT-143R
Current Rating (Amps): 25mA
Mounting Type: Surface Mount
Frequency: 800MHz
Configuration: N-Channel
Gain: 22dB
Technology: MOSFET
Noise Figure: 1.4dB
Supplier Device Package: PG-SOT-143R-3D
Part Status: Active
Voltage - Rated: 12 V
Voltage - Test: 9 V
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2730+0.25 EUR
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BF1009SRE6327HTSA1 BF1009S.pdf
BF1009SRE6327HTSA1
Hersteller: Infineon Technologies
Description: RF MOSFET 9V SOT143R
Packaging: Bulk
Package / Case: SOT-143R
Current Rating (Amps): 25mA
Mounting Type: Surface Mount
Frequency: 800MHz
Configuration: N-Channel
Gain: 22dB
Technology: MOSFET (Metal Oxide)
Noise Figure: 1.4dB
Supplier Device Package: PG-SOT-143R-3D
Voltage - Rated: 12 V
Voltage - Test: 9 V
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CY7C1148KV18-400BZXC download
CY7C1148KV18-400BZXC
Hersteller: Infineon Technologies
Description: IC SRAM 18MBIT PARALLEL 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 18Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, DDR II+
Clock Frequency: 400 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (13x15)
Part Status: Active
Memory Interface: Parallel
Memory Organization: 1M x 18
DigiKey Programmable: Not Verified
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0209085P001
Hersteller: Infineon Technologies
Description: 0209085P001
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BGA231L7E6327 INFNS16697-1.pdf?t.download=true&u=5oefqw
BGA231L7E6327
Hersteller: Infineon Technologies
Description: IC AMP GALI 1.55-1.615GHZ TSLP7
Packaging: Bulk
Package / Case: 6-XFDFN Exposed Pad
Mounting Type: Surface Mount
Frequency: 1.55GHz ~ 1.615GHz
RF Type: Galileo, GLONASS, GPS
Voltage - Supply: 1.5V ~ 3.6V
Gain: 16dB
Current - Supply: 4.4mA
Noise Figure: 0.75dB
P1dB: -5dBm
Test Frequency: 1.55GHz ~ 1.615GHz
Supplier Device Package: PG-TSLP-7-1
Part Status: Active
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590+0.93 EUR
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BGA728L7E6327
Hersteller: Infineon Technologies
Description: IC RF AMP GPS 1575MHZ TSLP7-1
Packaging: Bulk
Package / Case: 6-XFDFN Exposed Pad
Mounting Type: Surface Mount
Frequency: 1575MHz
RF Type: GPS
Voltage - Supply: 1.5V ~ 3.3V
Gain: 20dB
Current - Supply: 3.3mA
Noise Figure: 0.75dB
P1dB: -15.5dBm
Test Frequency: 1.575GHz
Supplier Device Package: PG-TSLP-7-1
Part Status: Active
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416+1.38 EUR
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BGA123N6E6327XTSA1 Infineon-BGA123N6-DataSheet-v02_02-EN.pdf?fileId=8ac78c8c7f2a768a017f975b343074f4
BGA123N6E6327XTSA1
Hersteller: Infineon Technologies
Description: IC AMP BEIDOU 1.55-1.615GHZ TSNP
Packaging: Tape & Reel (TR)
Package / Case: 6-XFDFN
Mounting Type: Surface Mount
Frequency: 1.55GHz ~ 1.615GHz
RF Type: Beidou, Galileo, GLONASS, GPS
Voltage - Supply: 1.1V ~ 2.8V
Gain: 21.2dB
Current - Supply: 1.65mA
Noise Figure: 0.75dB
P1dB: -12dBm
Test Frequency: 1.575GHz
Supplier Device Package: PG-TSNP-6-2
Part Status: Active
Produkt ist nicht verfügbar
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BGA123N6E6327XTSA1 Infineon-BGA123N6-DataSheet-v02_02-EN.pdf?fileId=8ac78c8c7f2a768a017f975b343074f4
BGA123N6E6327XTSA1
Hersteller: Infineon Technologies
Description: IC AMP BEIDOU 1.55-1.615GHZ TSNP
Packaging: Cut Tape (CT)
Package / Case: 6-XFDFN
Mounting Type: Surface Mount
Frequency: 1.55GHz ~ 1.615GHz
RF Type: Beidou, Galileo, GLONASS, GPS
Voltage - Supply: 1.1V ~ 2.8V
Gain: 21.2dB
Current - Supply: 1.65mA
Noise Figure: 0.75dB
P1dB: -12dBm
Test Frequency: 1.575GHz
Supplier Device Package: PG-TSNP-6-2
Part Status: Active
Produkt ist nicht verfügbar
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BGA125N6E6327XTSA1 Infineon-BGA125N6-DataSheet-v02_02-EN.pdf?fileId=8ac78c8c7f2a768a017f975b483c74f7
BGA125N6E6327XTSA1
Hersteller: Infineon Technologies
Description: IC AMP BEIDOU 1.164-1.3GHZ TSNP6
Packaging: Cut Tape (CT)
Package / Case: 6-XFDFN
Mounting Type: Surface Mount
Frequency: 1.164GHz ~ 1.3GHz
RF Type: Beidou, Galileo, GLONASS, GPS
Voltage - Supply: 1.1V ~ 2.8V
Gain: 22.2dB
Current - Supply: 1.45mA
Noise Figure: 0.8dB
P1dB: -12dBm
Test Frequency: 1.164GHz ~ 1.3GHz
Supplier Device Package: PG-TSNP-6-2
Produkt ist nicht verfügbar
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IFX25001TSV85AKSA1 INFNS14793-1.pdf?t.download=true&u=5oefqw
IFX25001TSV85AKSA1
Hersteller: Infineon Technologies
Description: IC REG LINEAR VOLTAGE REG
Supplier Device Package: PG-TO220-3-1
Number of Regulators: 1
Voltage - Input (Max): 40V
Current - Quiescent (Iq): 220 µA
Output Configuration: Positive
Operating Temperature: -40°C ~ 125°C
Current - Output: 400mA
Mounting Type: Through Hole
Output Type: Fixed
Package / Case: TO-220-3
Packaging: Bulk
Current - Supply (Max): 30 mA
Protection Features: Over Current, Over Temperature, Reverse Polarity, Short Circuit
Voltage Dropout (Max): 0.5V @ 250mA
PSRR: 60dB (100Hz)
Voltage - Output (Min/Fixed): 10V
auf Bestellung 23124 Stücke:
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630+0.94 EUR
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IFX25001TSV85 INFNS14793-1.pdf?t.download=true&u=5oefqw
IFX25001TSV85
Hersteller: Infineon Technologies
Description: IC REG LINEAR VOLTAGE REG
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682+0.96 EUR
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IM240M6Y1BAKMA1 IM240-M6xxB.pdf
IM240M6Y1BAKMA1
Hersteller: Infineon Technologies
Description: IPM MICRO 3PH DRIVER DIP23
Packaging: Tube
Package / Case: 23-DIP Module (0.573", 14.55mm)
Mounting Type: Through Hole
Configuration: 3 Phase Inverter
Part Status: Obsolete
Produkt ist nicht verfügbar
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BF5020WE6327 INFNS13463-1.pdf?t.download=true&u=5oefqw
Hersteller: Infineon Technologies
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: SC-82A, SOT-343
Current Rating (Amps): 100nA
Mounting Type: Surface Mount
Configuration: N-Channel
Gain: 32dB
Technology: MOSFET
Noise Figure: 1.2dB
Supplier Device Package: PG-SOT343-4-1
Part Status: Active
Voltage - Rated: 8 V
Voltage - Test: 5 V
Current - Test: 10 mA
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2615+0.3 EUR
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BF 5020 E6327 fundamentals-of-power-semiconductors
BF 5020 E6327
Hersteller: Infineon Technologies
Description: RF MOSFET 5V SOT143
Packaging: Tape & Reel (TR)
Package / Case: TO-253-4, TO-253AA
Current Rating (Amps): 25mA
Mounting Type: Surface Mount
Frequency: 800MHz
Configuration: N-Channel
Gain: 26dB
Technology: MOSFET (Metal Oxide)
Noise Figure: 1.2dB
Supplier Device Package: PG-SOT-143-3D
Voltage - Rated: 8 V
Voltage - Test: 5 V
Current - Test: 10 mA
Produkt ist nicht verfügbar
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BF 5020R E6327 fundamentals-of-power-semiconductors
BF 5020R E6327
Hersteller: Infineon Technologies
Description: RF MOSFET 5V SOT143R
Packaging: Tape & Reel (TR)
Package / Case: SOT-143R
Current Rating (Amps): 25mA
Mounting Type: Surface Mount
Frequency: 800MHz
Configuration: N-Channel
Gain: 26dB
Technology: MOSFET (Metal Oxide)
Noise Figure: 1.2dB
Supplier Device Package: PG-SOT-143R-3D
Voltage - Rated: 8 V
Voltage - Test: 5 V
Current - Test: 10 mA
Produkt ist nicht verfügbar
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IPD14N06S280ATMA2 INFNS09524-1.pdf?t.download=true&u=5oefqw
IPD14N06S280ATMA2
Hersteller: Infineon Technologies
Description: MOSFET N-CH 55V 17A TO252-31
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 80mOhm @ 7A, 10V
Power Dissipation (Max): 47W (Tc)
Vgs(th) (Max) @ Id: 4V @ 14µA
Supplier Device Package: PG-TO252-3-11
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 293 pF @ 25 V
Qualification: AEC-Q101
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2500+0.67 EUR
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TLE92104232QXXUMA1 Infineon-TLE92104-232QX-DataSheet-v01_00-EN.pdf?fileId=5546d462758f5bd1017597fe443d3976
TLE92104232QXXUMA1
Hersteller: Infineon Technologies
Description: IC HALF BRIDGE DRIVER 48VQFN
Features: Charge Pump
Packaging: Cut Tape (CT)
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: Analog, Logic, PWM, SPI
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge (4)
Voltage - Supply: 3V ~ 5.5V
Rds On (Typ): 40Ohm
Applications: DC Motors, General Purpose
Supplier Device Package: PG-VQFN-48-29
Fault Protection: Short Circuit
Grade: Automotive
Part Status: Active
Qualification: AEC-Q100
auf Bestellung 2691 Stücke:
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4+5.9 EUR
10+4.44 EUR
25+4.07 EUR
100+3.67 EUR
250+3.46 EUR
500+3.42 EUR
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EVAL6EDL04N02PRTOBO1 Infineon-Evaluationboard-6EDL04N02PR-ApplicationNotes-v01_00-EN.pdf?fileId=db3a304340155f3d014029b70dc80304
EVAL6EDL04N02PRTOBO1
Hersteller: Infineon Technologies
Description: EVAL BOARD FOR 6EDL04N02PR
Packaging: Bulk
Function: Gate Driver
Type: Power Management
Contents: Board(s)
Utilized IC / Part: 6EDL04N02PR
auf Bestellung 2 Stücke:
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1+276.96 EUR
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AUIRS2336STR auirs2336s.pdf?fileId=5546d462533600a4015355bfa09e15c6
AUIRS2336STR
Hersteller: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 28SOIC
Packaging: Tape & Reel (TR)
Package / Case: 28-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 28-SOIC
Rise / Fall Time (Typ): 125ns, 50ns
Channel Type: 3-Phase
Driven Configuration: Half-Bridge
Number of Drivers: 6
Gate Type: IGBT, MOSFET (N-Channel, P-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Current - Peak Output (Source, Sink): 200mA, 350mA
Grade: Automotive
Part Status: Obsolete
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
Produkt ist nicht verfügbar
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S29GL01GT11TFIV20 infineon-s29gl01gt-s29gl512t-1-gb-128-mb-512-mb-64-mb-gl-t-mirrorbit-eclipse-flash-datasheet-en.pdf?fileId=8ac78c8c7d0d8da4017d0ed2abb34fce
S29GL01GT11TFIV20
Hersteller: Infineon Technologies
Description: IC FLASH 1GBIT PARALLEL 56TSOP
Packaging: Tray
Package / Case: 56-TFSOP (0.724", 18.40mm Width)
Mounting Type: Surface Mount
Memory Size: 1Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.65V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 56-TSOP
Part Status: Active
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 110 ns
Memory Organization: 128M x 8
DigiKey Programmable: Not Verified
auf Bestellung 987 Stücke:
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1+36.74 EUR
10+34.06 EUR
25+32.99 EUR
91+31.49 EUR
182+30.7 EUR
273+30.25 EUR
546+29.49 EUR
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