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1EDN7550UXTSA1 1EDN7550UXTSA1 Infineon Technologies infineon-1edn7550b-datasheet-en.pdf Description: IC GATE DRVR HIGH-SIDE 6XFDFN
Packaging: Cut Tape (CT)
Package / Case: 6-XFDFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 4.5V ~ 20V
Input Type: Non-Inverting
Supplier Device Package: PG-TSNP-6-13
Rise / Fall Time (Typ): 6.5ns, 4.5ns
Channel Type: Single
Driven Configuration: High-Side
Number of Drivers: 1
Gate Type: MOSFET (N-Channel, P-Channel)
Current - Peak Output (Source, Sink): 4A, 8A
Part Status: Active
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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AUIRLU3114Z AUIRLU3114Z Infineon Technologies IRSDS11934-1.pdf?t.download=true&u=5oefqw Description: AUIRLU3114Z - 20V-40V N-CHANNEL
Packaging: Bulk
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 130A (Tc)
Rds On (Max) @ Id, Vgs: 4.9mOhm @ 42A, 10V
Power Dissipation (Max): 140W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 100µA
Supplier Device Package: PG-TO251-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 3810 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
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611078800A Infineon Technologies Description: IC GATE NOR
Packaging: Bulk
Part Status: Obsolete
DigiKey Programmable: Not Verified
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IPI45N06S4L08AKSA3 IPI45N06S4L08AKSA3 Infineon Technologies Infineon-IPP_B_I45N06S4L_08-DS-v01_00-en.pdf?fileId=db3a30431ff98815012038fbf79a0d1c Description: MOSFET N-CHANNEL_55/60V
Qualification: AEC-Q101
Grade: Automotive
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Packaging: Bulk
Input Capacitance (Ciss) (Max) @ Vds: 4780 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±16V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: PG-TO262-3-1
Vgs(th) (Max) @ Id: 2.2V @ 35µA
Power Dissipation (Max): 71W (Tc)
Rds On (Max) @ Id, Vgs: 8.2mOhm @ 45A, 10V
Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
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BC850CE6359HTMA1 BC850CE6359HTMA1 Infineon Technologies INFNS14907-1.pdf?t.download=true&u=5oefqw Description: TRANS NPN 45V 0.1A PG-SOT23
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V
Frequency - Transition: 250MHz
Supplier Device Package: PG-SOT23
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 330 mW
Grade: Automotive
Qualification: AEC-Q101
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BSC021N08NS5ATMA1 BSC021N08NS5ATMA1 Infineon Technologies Infineon-BSC021N08NS5-DataSheet-v02_01-EN.pdf?fileId=5546d462689a790c0168c7cb2946643e Description: MOSFET TRENCH 80V TSON-8
Input Capacitance (Ciss) (Max) @ Vds: 8600 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs: 117 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Part Status: Active
Supplier Device Package: PG-TSON-8-3
Vgs(th) (Max) @ Id: 3.8V @ 146µA
Power Dissipation (Max): 214W (Tc)
Rds On (Max) @ Id, Vgs: 2.1mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 226A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
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BSC021N08NS5ATMA1 BSC021N08NS5ATMA1 Infineon Technologies Infineon-BSC021N08NS5-DataSheet-v02_01-EN.pdf?fileId=5546d462689a790c0168c7cb2946643e Description: MOSFET TRENCH 80V TSON-8
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 8600 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs: 117 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Part Status: Active
Supplier Device Package: PG-TSON-8-3
Vgs(th) (Max) @ Id: 3.8V @ 146µA
Power Dissipation (Max): 214W (Tc)
Rds On (Max) @ Id, Vgs: 2.1mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 226A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
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ITS4880R Infineon Technologies INFN-S-A0000193379-1.pdf?t.download=true&u=5oefqw Description: ITS4880 - PROFET - SMART HIGH SI
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BC80825E6433 BC80825E6433 Infineon Technologies INFNS11647-1.pdf?t.download=true&u=5oefqw Description: TRANS PNP 25V 0.5A PG-SOT23-3-11
Part Status: Active
Packaging: Bulk
Frequency - Transition: 200MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 100mA, 1V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
Operating Temperature: 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Qualification: AEC-Q101
Power - Max: 330 mW
Voltage - Collector Emitter Breakdown (Max): 25 V
Current - Collector (Ic) (Max): 500 mA
Grade: Automotive
Supplier Device Package: PG-SOT23-3-11
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AUIRF7769L2TR AUIRF7769L2TR Infineon Technologies INFN-S-A0002297188-1.pdf?t.download=true&u=5oefqw Description: MOSFET N-CH 100V 375A DIRECTFET
Input Capacitance (Ciss) (Max) @ Vds: 11560 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 300 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: DirectFET™ Isometric L8
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 3.3W (Ta), 125W (Tc)
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 74A, 10V
Current - Continuous Drain (Id) @ 25°C: 375A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: DirectFET™ Isometric L8
Qualification: AEC-Q101
Grade: Automotive
Packaging: Tape & Reel (TR)
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TLE493DP2B6A3HTSA1 TLE493DP2B6A3HTSA1 Infineon Technologies Infineon-TLE493D-P2B6-DataSheet-v01_00-EN.pdf?fileId=5546d46277fc743901785af375274815 Description: SEN HALL EFFECT SPI PG-TSOP6-6-8
Packaging: Tape & Reel (TR)
Features: Programmable
Package / Case: SOT-23-6 Thin, TSOT-23-6
Output Type: I2C
Mounting Type: Surface Mount
Axis: X, Y, Z
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 2.8V ~ 3.5V
Technology: Hall Effect
Resolution: 12 b
Sensing Range: ±160mT
Current - Supply (Max): 5mA
Supplier Device Package: PG-TSOP6-6-8
Part Status: Active
Grade: Automotive
Qualification: AEC-Q100
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TLE493DP2B6A1HTSA1 TLE493DP2B6A1HTSA1 Infineon Technologies Infineon-TLE493D-P2B6-DataSheet-v01_00-EN.pdf?fileId=5546d46277fc743901785af375274815 Description: SEN HALL EFFECT SPI PG-TSOP6-6-8
Packaging: Tape & Reel (TR)
Features: Programmable
Package / Case: SOT-23-6 Thin, TSOT-23-6
Output Type: I2C
Mounting Type: Surface Mount
Axis: X, Y, Z
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 2.8V ~ 3.5V
Technology: Hall Effect
Resolution: 12 b
Sensing Range: ±160mT
Current - Supply (Max): 5mA
Supplier Device Package: PG-TSOP6-6-8
Part Status: Active
Grade: Automotive
Qualification: AEC-Q100
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TLE493DP2B6A2HTSA1 TLE493DP2B6A2HTSA1 Infineon Technologies Infineon-TLE493D-P2B6-DataSheet-v01_00-EN.pdf?fileId=5546d46277fc743901785af375274815 Description: SEN HALL EFFECT SPI PG-TSOP6-6-8
Features: Programmable
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Output Type: I2C
Mounting Type: Surface Mount
Axis: X, Y, Z
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 2.8V ~ 3.5V
Technology: Hall Effect
Resolution: 12 b
Sensing Range: ±160mT
Current - Supply (Max): 5mA
Supplier Device Package: PG-TSOP6-6-8
Grade: Automotive
Part Status: Active
Qualification: AEC-Q100
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TLE493DP2B6A0HTSA1 TLE493DP2B6A0HTSA1 Infineon Technologies Infineon-TLE493D-P2B6-DataSheet-v01_00-EN.pdf?fileId=5546d46277fc743901785af375274815 Description: SEN HALL EFFECT SPI PG-TSOP6-6-8
Features: Programmable
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Output Type: I2C
Mounting Type: Surface Mount
Axis: X, Y, Z
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 2.8V ~ 3.5V
Technology: Hall Effect
Resolution: 12 b
Sensing Range: ±160mT
Current - Supply (Max): 5mA
Supplier Device Package: PG-TSOP6-6-8
Grade: Automotive
Part Status: Active
Qualification: AEC-Q100
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CY96F348HSBPQCR-GSE2 CY96F348HSBPQCR-GSE2 Infineon Technologies Infineon-CY96345_346_CY96F345_CY96F346_F347_F348_F2MC-16FX_CY96340_Series_16-bit_Proprietary_Microcontroller_Datasheet-AdditionalTechnicalInformation-v03_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0edcaffb60a9&utm_source=cypress&ut Description: IC MCU 16BIT 576KB FLASH 100QFP
Packaging: Tray
Package / Case: 100-BQFP
Mounting Type: Surface Mount
Speed: 56MHz
Program Memory Size: 576KB (576K x 8)
RAM Size: 24K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: F²MC-16FX
Data Converters: A/D 24x10b SAR
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Connectivity: CANbus, EBI/EMI, I2C, LINbus, SCI, UART/USART
Peripherals: DMA, LVD, LVR, POR, PWM, WDT
Supplier Device Package: 100-QFP (14x20)
Part Status: Obsolete
Number of I/O: 82
DigiKey Programmable: Not Verified
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SPB18P06PG SPB18P06PG Infineon Technologies Infineon-SPB18P06P-DS-v01_06-en.pdf?fileId=db3a304412b407950112b42bd62a460d Description: SPB18P06 - 20V-250V P-CHANNEL PO
Packaging: Bulk
Package / Case: TO-263-4, D²Pak (3 Leads + Tab), TO-263AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 18.7A (Ta)
Rds On (Max) @ Id, Vgs: 130mOhm @ 13.2A, 10V
Power Dissipation (Max): 81.1W (Ta)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: PG-TO263-3-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 860 pF @ 25 V
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TLE9877QTW40XUMA1 TLE9877QTW40XUMA1 Infineon Technologies Infineon-TLE9877QTW40-DataSheet-v01_00-EN.pdf?fileId=5546d46274dd77260174e8c7597b349c Description: IC MCU 32BIT 64KB FLASH 48TQFP
Packaging: Cut Tape (CT)
Package / Case: 48-TQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 40MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 6K x 8
Operating Temperature: -40°C ~ 175°C (TJ)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 4K x 8
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 5x10b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 5.5V ~ 27V
Connectivity: LINbus, SPI, SSC, UART/USART
Peripherals: Brown-out Detect/Reset, DMA, POR, PWM, WDT
Supplier Device Package: 48-TQFP (7x7)
Part Status: Active
Number of I/O: 10
DigiKey Programmable: Not Verified
Grade: Automotive
Qualification: AEC-Q100
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100+6.85 EUR
250+6.53 EUR
500+6.34 EUR
1000+6.18 EUR
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AIGB30N65F5ATMA1 AIGB30N65F5ATMA1 Infineon Technologies Infineon-Semiconductor_solutions_for_hybrid_electric_and_electric_cars-ABR-v01_00-EN.pdf?fileId=5546d46269e1c019016a4a76250c4ab4 Description: IGBT NPT 650V 30A TO263-3-2
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Input Type: Standard
Supplier Device Package: PG-TO263-3-2
IGBT Type: NPT
Current - Collector (Ic) (Max): 30 A
Voltage - Collector Emitter Breakdown (Max): 650 V
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BTC300101TAAATMA1 BTC300101TAAATMA1 Infineon Technologies BTC30010-1TAA_BTC50010-1TAA_v1.3_2-6-15.pdf Description: IC PWR SWITCH N-CHAN 1:1 TO263-7
Grade: Automotive
Part Status: Obsolete
Supplier Device Package: PG-TO263-7-8
Ratio - Input:Output: 1:1
Current - Output (Max): 30A
Voltage - Supply (Vcc/Vdd): Not Required
Voltage - Load: 5V ~ 28V
Input Type: Non-Inverting
Output Configuration: High Side
Operating Temperature: -40°C ~ 150°C (TJ)
Switch Type: General Purpose
Interface: On/Off
Number of Outputs: 1
Mounting Type: Surface Mount
Output Type: N-Channel
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Packaging: Bulk
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BTC30010-1TAA Infineon Technologies INFN-S-A0001300279-1.pdf?t.download=true&u=5oefqw Description: BUFFER/INVERTER PERIPHL DRIVER
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PSB 21150 F V1.4 PSB 21150 F V1.4 Infineon Technologies IPAC-X.pdf Description: IC TELECOM INTERFACE TQFP-64
Supplier Device Package: PG-TQFP-64-1
Current - Supply: 30mA
Voltage - Supply: 3.3V
Operating Temperature: 0°C ~ 70°C
Interface: HDLC, ISDN, SCI
Function: PC Adapter Circuit
Mounting Type: Surface Mount
Package / Case: 64-LQFP
Packaging: Tray
Number of Circuits: 1
Part Status: Obsolete
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PSF 21150 F V1.4 PSF 21150 F V1.4 Infineon Technologies IPAC-X.pdf Description: IC TELECOM INTERFACE TQFP-64
Number of Circuits: 1
Part Status: Discontinued at Digi-Key
Supplier Device Package: PG-TQFP-64
Current - Supply: 30mA
Voltage - Supply: 3.3V
Operating Temperature: -40°C ~ 85°C
Interface: ISDN
Function: PC Adapter Circuit
Mounting Type: Surface Mount
Package / Case: 64-LQFP
Packaging: Tray
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TLE4276GVATMA4 TLE4276GVATMA4 Infineon Technologies Infineon-TLE4276-DS-v02_80-EN.pdf?fileId=5546d4626102d35a01612c4b988a6576 Description: TLE4276G - OPTIREG LINEAR LOW DR
Packaging: Bulk
Package / Case: TO-263-6, D2PAK (5 Leads + Tab), TO-263BA
Output Type: Adjustable
Mounting Type: Surface Mount
Current - Output: 400mA
Operating Temperature: -40°C ~ 150°C
Output Configuration: Positive
Current - Quiescent (Iq): 200 µA
Voltage - Input (Max): 40V
Number of Regulators: 1
Supplier Device Package: PG-TO263-5-1
Voltage - Output (Max): 20V
Voltage - Output (Min/Fixed): 2.5V
Control Features: Inhibit
Part Status: Active
PSRR: 54dB (100Hz)
Voltage Dropout (Max): 0.5V @ 250mA
Protection Features: Over Current, Over Temperature, Reverse Polarity, Short Circuit
Current - Supply (Max): 25 mA
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IRGC25B120UB Infineon Technologies Short_Form_Cat_2016.pdf Description: IGBT CHIP
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CYTT32302-56LQI48 Infineon Technologies Description: IC MCU TRUETOUCH 56QFN
Packaging: Tray
Package / Case: 56-UFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: I²C, SPI
Voltage - Supply: 1.71V ~ 5.5V
Resolution (Bits): 32 b
Supplier Device Package: 56-QFN (6x6)
Touchscreen: 2 Wire Capacitive
Part Status: Obsolete
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CYTT32302-56LQI48T Infineon Technologies Description: IC MCU TRUETOUCH 56QFN
Packaging: Tray
Package / Case: 56-UFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: I²C, SPI
Voltage - Supply: 1.71V ~ 5.5V
Resolution (Bits): 32 b
Supplier Device Package: 56-QFN (6x6)
Touchscreen: 2 Wire Capacitive
Part Status: Obsolete
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TT32302-56LQI48 Infineon Technologies Description: IC MCU TRUETOUCH
Packaging: Tray
Part Status: Obsolete
DigiKey Programmable: Not Verified
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TT32302-56LQI48T Infineon Technologies Description: IC MCU TRUETOUCH
Packaging: Tape & Reel (TR)
Part Status: Obsolete
DigiKey Programmable: Not Verified
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TT330N16AOFHPSA1 TT330N16AOFHPSA1 Infineon Technologies Infineon-TT330N-DS-v03_04-EN.pdf?fileId=5546d46269e1c019016a0c69cb4f4b54 Description: SCR MODULE 1.6KV 520A MODULE
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 130°C
Structure: Series Connection - All SCRs
Current - Hold (Ih) (Max): 300 mA
Current - Gate Trigger (Igt) (Max): 200 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 12500A @ 50Hz
Number of SCRs, Diodes: 2 SCRs
Current - On State (It (AV)) (Max): 330 A
Voltage - Gate Trigger (Vgt) (Max): 2 V
Part Status: Active
Current - On State (It (RMS)) (Max): 520 A
Voltage - Off State: 1.6 kV
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BSR302KL6327 BSR302KL6327 Infineon Technologies Infineon-BSR302N-DS-v01_03-en.pdf?fileId=db3a3043156fd573011622e789f21f7c Description: SMALL SIGNAL MOSFET
Packaging: Bulk
Part Status: Active
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IPL65R195C7AUMA1 IPL65R195C7AUMA1 Infineon Technologies Infineon-IPL65R195C7-DS-v02_00-en.pdf?fileId=5546d46145da30e80145f07420a26b18 Description: MOSFET N-CH 650V 12A 4VSON
Input Capacitance (Ciss) (Max) @ Vds: 1150 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PG-VSON-4
Vgs(th) (Max) @ Id: 4V @ 290µA
Power Dissipation (Max): 75W (Tc)
Rds On (Max) @ Id, Vgs: 195mOhm @ 2.9A, 10V
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 4-PowerTSFN
Packaging: Cut Tape (CT)
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IST011N06NM5AUMA1 IST011N06NM5AUMA1 Infineon Technologies Infineon-IST011N06NM5-DataSheet-v02_00-EN.pdf?fileId=5546d46277921c320177aa91e7c17ec7 Description: TRENCH 40<-<100V PG-HSOF-5
Packaging: Tape & Reel (TR)
Package / Case: 5-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 38A (Ta), 399A (Tc)
Rds On (Max) @ Id, Vgs: 1.1mOhm @ 100A, 10V
Power Dissipation (Max): 3.8W (Ta), 313W (Tc)
Vgs(th) (Max) @ Id: 3.3V @ 148µA
Supplier Device Package: PG-HSOF-5-4
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 154 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8100 pF @ 30 V
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IST011N06NM5AUMA1 IST011N06NM5AUMA1 Infineon Technologies Infineon-IST011N06NM5-DataSheet-v02_00-EN.pdf?fileId=5546d46277921c320177aa91e7c17ec7 Description: TRENCH 40<-<100V PG-HSOF-5
Packaging: Cut Tape (CT)
Package / Case: 5-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 38A (Ta), 399A (Tc)
Rds On (Max) @ Id, Vgs: 1.1mOhm @ 100A, 10V
Power Dissipation (Max): 3.8W (Ta), 313W (Tc)
Vgs(th) (Max) @ Id: 3.3V @ 148µA
Supplier Device Package: PG-HSOF-5-4
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 154 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8100 pF @ 30 V
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BGS1711MC222EE6433XUSA1 Infineon Technologies Description: IC RF SWITCH
Part Status: Active
Packaging: Bulk
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BTS3207NNT BTS3207NNT Infineon Technologies BTS3207N_2008_04_14.pdf Description: IC PWR SWTCH N-CHAN 1:1 SOT223-4
Part Status: Obsolete
Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage
Supplier Device Package: PG-SOT223-4
Ratio - Input:Output: 1:1
Current - Output (Max): 640mA
Voltage - Supply (Vcc/Vdd): Not Required
Voltage - Load: 42V (Max)
Input Type: Non-Inverting
Rds On (Typ): 500mOhm (Max)
Output Configuration: Low Side
Operating Temperature: -40°C ~ 150°C (TJ)
Switch Type: General Purpose
Interface: On/Off
Number of Outputs: 1
Mounting Type: Surface Mount
Output Type: N-Channel
Package / Case: TO-261-4, TO-261AA
Features: Auto Restart
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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FF400R16KF4NOSA1 Infineon Technologies INFNS09012-1.pdf?t.download=true&u=5oefqw Description: IGBT MODULE 1600V 400A 3100W
Configuration: 2 Independent
Input: Standard
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Bulk
Input Capacitance (Cies) @ Vce: 65 nF @ 25 V
Current - Collector Cutoff (Max): 3 mA
Power - Max: 3100 W
Voltage - Collector Emitter Breakdown (Max): 1600 V
Current - Collector (Ic) (Max): 400 A
NTC Thermistor: No
Vce(on) (Max) @ Vge, Ic: 3.7V @ 15V, 400A
Operating Temperature: 150°C (TJ)
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FF400R12KT4HOSA1 Infineon Technologies INFN-S-A0002272792-1.pdf?t.download=true&u=5oefqw Description: IGBT MODULE
Packaging: Bulk
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FF400R12KT4PBOSA1 Infineon Technologies INFN-S-A0003614526-1.pdf?t.download=true&u=5oefqw Description: FF400R12KT4P - 1200 V, 400 A DUA
Input Capacitance (Cies) @ Vce: 28000 pF @ 25 V
Current - Collector Cutoff (Max): 5 mA
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 400 A
IGBT Type: Trench Field Stop
Supplier Device Package: AG-62MMHB
NTC Thermistor: No
Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 400A
Operating Temperature: -40°C ~ 150°C (TJ)
Configuration: Dual, Common Source
Input: Standard
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Bulk
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FF400R17KF4CNOSA1 FF400R17KF4CNOSA1 Infineon Technologies Description: FF400R17 - IGBT MODULE
Packaging: Bulk
Produkt ist nicht verfügbar
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B505CA4EMCAXP B505CA4EMCAXP Infineon Technologies INFNS03052-1.pdf?t.download=true&u=5oefqw Description: IC MCU 8BIT 32KB OTP 44MQFP
Packaging: Bulk
Package / Case: 44-QFP
Mounting Type: Surface Mount
Speed: 20MHz
Program Memory Size: 32KB (32K x 8)
RAM Size: 1.25K x 8
Operating Temperature: 0°C ~ 70°C (TA)
Oscillator Type: External
Program Memory Type: OTP
Core Processor: C500
Data Converters: A/D 8x10b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 4.25V ~ 5.5V
Connectivity: CANbus, EBI/EMI, UART/USART
Peripherals: POR, PWM, WDT
Supplier Device Package: PG-MQFP-44-2
Part Status: Active
Number of I/O: 34
DigiKey Programmable: Not Verified
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C164CM4EFABFXUMA1 C164CM4EFABFXUMA1 Infineon Technologies C164CM_SM.pdf Description: IC MCU 16BIT 32KB OTP 64TQFP
Packaging: Bulk
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Speed: 20MHz
Program Memory Size: 32KB (32K x 8)
RAM Size: 2K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External
Program Memory Type: OTP
Core Processor: C166
Data Converters: A/D 8x10b
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 4.5V ~ 5.5V
Connectivity: CANbus, EBI/EMI, SPI, UART/USART
Peripherals: POR, PWM, WDT
Supplier Device Package: P-TQFP-64-4
Part Status: Obsolete
Number of I/O: 50
DigiKey Programmable: Verified
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CYW20707UA2KFFB4G CYW20707UA2KFFB4G Infineon Technologies Infineon-CYW20707_Bluetooth_SoC_for_Embedded_Wireless_Devices_Datasheet-AdditionalTechnicalInformation-v09_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee1ecf86806&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_ Description: IC RF TXRX+MCU BLE 49FCBGA
Frequency: 2.4GHz
Mounting Type: Surface Mount
Sensitivity: -96dBm
Package / Case: 49-VFBGA, FCBGA
Packaging: Tray
DigiKey Programmable: Not Verified
Part Status: Active
Serial Interfaces: I2C, I2S, SPI, UART
RF Family/Standard: Bluetooth
Modulation: 4DQPSK, 8DPSK, GFSK
GPIO: 24
Supplier Device Package: 49-FCBGA (4.5x4)
Current - Transmitting: 60mA
Data Rate (Max): 3Mbps
Current - Receiving: 26mA
Protocol: Bluetooth v4.2
Power - Output: 12dBm
Voltage - Supply: 3.3V
Operating Temperature: -30°C ~ 85°C
Type: TxRx + MCU
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CYW20707UA1KFFB4GT CYW20707UA1KFFB4GT Infineon Technologies Infineon-CYW20707_Bluetooth_SoC_for_Embedded_Wireless_Devices_Datasheet-AdditionalTechnicalInformation-v09_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee1ecf86806&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_ Description: IC RF TXRX+MCU BLE 49FCBGA
DigiKey Programmable: Not Verified
Serial Interfaces: I2S, SPI, UART
RF Family/Standard: Bluetooth
GPIO: 8
Supplier Device Package: 49-FCBGA (4.5x4)
Current - Transmitting: 60mA
Data Rate (Max): 2Mbps
Current - Receiving: 26.4mA
Protocol: Bluetooth v4.2
Power - Output: 9dBm
Voltage - Supply: 3.3V
Operating Temperature: -30°C ~ 85°C
Type: TxRx + MCU
Frequency: 2.4GHz
Mounting Type: Surface Mount
Sensitivity: -96.5dBm
Package / Case: 49-VFBGA, FCBGA
Packaging: Tape & Reel (TR)
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CYW20707UA1KFFB4G CYW20707UA1KFFB4G Infineon Technologies Infineon-CYW20707_Bluetooth_SoC_for_Embedded_Wireless_Devices_Datasheet-AdditionalTechnicalInformation-v09_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee1ecf86806&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_ Description: IC RF TXRX+MCU BLE 49FCBGA
DigiKey Programmable: Not Verified
Serial Interfaces: I2S, SPI, UART
RF Family/Standard: Bluetooth
GPIO: 8
Supplier Device Package: 49-FCBGA (4.5x4)
Current - Transmitting: 60mA
Data Rate (Max): 2Mbps
Current - Receiving: 26.4mA
Protocol: Bluetooth v4.2
Power - Output: 9dBm
Voltage - Supply: 3.3V
Operating Temperature: -30°C ~ 85°C
Type: TxRx + MCU
Frequency: 2.4GHz
Mounting Type: Surface Mount
Sensitivity: -96.5dBm
Package / Case: 49-VFBGA, FCBGA
Packaging: Tray
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CYW20706UA1KFFB4G CYW20706UA1KFFB4G Infineon Technologies download Description: IC RF TXRX+MCU BLE 49FCBGA
Packaging: Tray
Package / Case: 49-VFBGA, FCBGA
Sensitivity: -96.5dBm
Mounting Type: Surface Mount
Frequency: 2.4GHz
Memory Size: 848kB ROM, 352kB RAM
Type: TxRx + MCU
Operating Temperature: -30°C ~ 85°C
Voltage - Supply: 3.3V
Power - Output: 12dBm
Protocol: Bluetooth v4.2
Current - Receiving: 12.5mA
Data Rate (Max): 2Mbps
Current - Transmitting: 26.5mA
Supplier Device Package: 49-FCBGA (4.5x4)
GPIO: 7
RF Family/Standard: Bluetooth
Serial Interfaces: I2C, I2S, SPI, UART
DigiKey Programmable: Not Verified
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CYW20707UA1KFFB1G CYW20707UA1KFFB1G Infineon Technologies download Description: IC RF TXRX+MCU BLE 49FCBGA
Packaging: Tray
Package / Case: 49-VFBGA, FCBGA
Sensitivity: -96.5dBm
Mounting Type: Surface Mount
Frequency: 2.4GHz
Type: TxRx + MCU
Operating Temperature: -30°C ~ 85°C
Voltage - Supply: 3.3V
Power - Output: 9dBm
Protocol: Bluetooth v4.2
Current - Receiving: 26.4mA
Data Rate (Max): 2Mbps
Current - Transmitting: 60mA
Supplier Device Package: 49-FCBGA (4.5x4)
GPIO: 8
RF Family/Standard: Bluetooth
Serial Interfaces: I2S, SPI, UART
DigiKey Programmable: Not Verified
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CYW20742A2KFB1GT CYW20742A2KFB1GT Infineon Technologies 5047 Description: IC RF SGL CHIP BLE 81FBGA
Packaging: Tape & Reel (TR)
Package / Case: 81-TFBGA
Mounting Type: Surface Mount
Supplier Device Package: 81-FBGA (8x8)
DigiKey Programmable: Not Verified
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CYW20745A0KFBGT CYW20745A0KFBGT Infineon Technologies Infineon-CYW20745_ROM_Based_Single_Microphone_Headset_IC_With_Voice_Command_Recognition_Datasheet-AdditionalTechnicalInformation-v04_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee213ca6861&utm_source=cypress&utm_medium=referral&utm Description: IC RF BLUETOOTH 64FBGA
Packaging: Tape & Reel (TR)
Package / Case: 64-VFBGA
Mounting Type: Surface Mount
Supplier Device Package: 64-FBGA (7x7)
DigiKey Programmable: Not Verified
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CYW20732E CYW20732E Infineon Technologies CYW20732E_Web.pdf Description: IOT BLUETOOTH 802.15.4
Packaging: Tray
DigiKey Programmable: Not Verified
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BF999E6812HTSA1 Infineon Technologies Description: RF MOSFET 10V SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Current Rating (Amps): 16mA
Mounting Type: Surface Mount
Frequency: 300MHz
Configuration: N-Channel
Gain: 27dB
Technology: MOSFET (Metal Oxide)
Noise Figure: 2.1dB
Supplier Device Package: PG-SOT23
Grade: Automotive
Part Status: Last Time Buy
Voltage - Rated: 20 V
Voltage - Test: 10 V
Current - Test: 10 mA
Qualification: AEC-Q101
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IMC099TT038XUMA1 IMC099TT038XUMA1 Infineon Technologies Infineon-IMC100-DS-v01_03-EN.pdf?fileId=5546d46265487f7b016584a0147e7660 Description: IC MOTOR CONTROL TSSOP-38
Motor Type - AC, DC: AC, Synchronous
Supplier Device Package: PG-TSSOP-38-9
Applications: Home Appliance
Voltage - Supply: 3V ~ 5.5V
Operating Temperature: -40°C ~ 105°C (TA)
Interface: Analog, PWM
Current - Output: 50mA
Function: Controller
Mounting Type: Surface Mount
Package / Case: 38-TFSOP (0.173", 4.40mm Width)
Packaging: Tape & Reel (TR)
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BSM30GD60DLCE3224 Infineon Technologies BSM30GD60DLCE3224_Rev3_2006-01-31.pdf Description: IGBT MODULE 600V 40A 135W
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TLE42672GATMA2 TLE42672GATMA2 Infineon Technologies INFNS28001-1.pdf?t.download=true&u=ovmfp3 Description: IC REG LIN 5V 400MA PG-TO263-7-1
Packaging: Bulk
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 400mA
Operating Temperature: -40°C ~ 150°C
Output Configuration: Positive
Current - Quiescent (Iq): 4 mA
Voltage - Input (Max): 40V
Number of Regulators: 1
Supplier Device Package: PG-TO263-7-1
Voltage - Output (Min/Fixed): 5V
Control Features: Inhibit, Reset
Grade: Automotive
Part Status: Active
PSRR: 54dB (100Hz)
Voltage Dropout (Max): 0.6V @ 400mA
Protection Features: Over Current, Over Temperature, Reverse Polarity, Short Circuit, Transient Voltage
Current - Supply (Max): 80 mA
Qualification: AEC-Q100
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FS50R12KT4B15BOSA1 FS50R12KT4B15BOSA1 Infineon Technologies Infineon-FS50R12KT4_B15-DS-v03_00-en_de.pdf?fileId=db3a30431a47d73d011a4955bbac00fc Description: IGBT MOD 1200V 50A 280W
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F3L300R12MT4B23BOSA1 F3L300R12MT4B23BOSA1 Infineon Technologies Infineon-F3L300R12MT4_B23-DS-v03_00-en_de.pdf?fileId=db3a304333b8a7ca0133f9d470e0434c Description: IGBT MOD 1200V 450A 1550W MOD
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 300A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 450 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 1550 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 19 nF @ 25 V
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FF11MR12W1M1B70BPSA1 FF11MR12W1M1B70BPSA1 Infineon Technologies Infineon-FF11MR12W1M1_B70-DataSheet-v02_00-EN.pdf?fileId=5546d46277fc74390178365dff877ca9 Description: MOSFET 2N-CH 1200V AG-EASY1B
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Silicon Carbide (SiC)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 100A (Tj)
Input Capacitance (Ciss) (Max) @ Vds: 7360pF @ 800V
Rds On (Max) @ Id, Vgs: 11.3mOhm @ 100A, 15V
Gate Charge (Qg) (Max) @ Vgs: 248nC @ 15V
Vgs(th) (Max) @ Id: 5.55V @ 40mA
Supplier Device Package: AG-EASY1B
Part Status: Obsolete
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92-0263PBF Infineon Technologies Description: IC MOSFET
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IPU60R600C6 IPU60R600C6 Infineon Technologies INFNS17575-1.pdf?t.download=true&u=5oefqw Description: N-CHANNEL POWER MOSFET
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IPP60R600C6 IPP60R600C6 Infineon Technologies INFN-S-A0001299750-1.pdf?t.download=true&u=5oefqw Description: 7.3A, 600V, 0.6OHM, N-CHANNEL MO
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BSZ009NE2LS5ATMA1 BSZ009NE2LS5ATMA1 Infineon Technologies Infineon-BSZ009NE2LS5-DS-v02_00-EN.pdf?fileId=5546d46269e1c019016a501c81dd0f7e Description: MOSFET N-CH 25V 39A/40A TSDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 39A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs: 900mOhm @ 20A, 10V
Power Dissipation (Max): 2.1W (Ta), 69W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TSDSON-8-FL
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 124 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5500 pF @ 12 V
auf Bestellung 9540 Stücke:
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5+4.96 EUR
10+4.49 EUR
25+4 EUR
100+3.61 EUR
250+3.2 EUR
500+2.8 EUR
1000+2.32 EUR
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1EDN7550UXTSA1 infineon-1edn7550b-datasheet-en.pdf
1EDN7550UXTSA1
Hersteller: Infineon Technologies
Description: IC GATE DRVR HIGH-SIDE 6XFDFN
Packaging: Cut Tape (CT)
Package / Case: 6-XFDFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 4.5V ~ 20V
Input Type: Non-Inverting
Supplier Device Package: PG-TSNP-6-13
Rise / Fall Time (Typ): 6.5ns, 4.5ns
Channel Type: Single
Driven Configuration: High-Side
Number of Drivers: 1
Gate Type: MOSFET (N-Channel, P-Channel)
Current - Peak Output (Source, Sink): 4A, 8A
Part Status: Active
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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AUIRLU3114Z IRSDS11934-1.pdf?t.download=true&u=5oefqw
AUIRLU3114Z
Hersteller: Infineon Technologies
Description: AUIRLU3114Z - 20V-40V N-CHANNEL
Packaging: Bulk
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 130A (Tc)
Rds On (Max) @ Id, Vgs: 4.9mOhm @ 42A, 10V
Power Dissipation (Max): 140W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 100µA
Supplier Device Package: PG-TO251-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 3810 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 3631 Stücke:
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178+3.05 EUR
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611078800A
Hersteller: Infineon Technologies
Description: IC GATE NOR
Packaging: Bulk
Part Status: Obsolete
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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IPI45N06S4L08AKSA3 Infineon-IPP_B_I45N06S4L_08-DS-v01_00-en.pdf?fileId=db3a30431ff98815012038fbf79a0d1c
IPI45N06S4L08AKSA3
Hersteller: Infineon Technologies
Description: MOSFET N-CHANNEL_55/60V
Qualification: AEC-Q101
Grade: Automotive
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Packaging: Bulk
Input Capacitance (Ciss) (Max) @ Vds: 4780 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±16V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: PG-TO262-3-1
Vgs(th) (Max) @ Id: 2.2V @ 35µA
Power Dissipation (Max): 71W (Tc)
Rds On (Max) @ Id, Vgs: 8.2mOhm @ 45A, 10V
Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
auf Bestellung 29287 Stücke:
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498+1.11 EUR
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BC850CE6359HTMA1 INFNS14907-1.pdf?t.download=true&u=5oefqw
BC850CE6359HTMA1
Hersteller: Infineon Technologies
Description: TRANS NPN 45V 0.1A PG-SOT23
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V
Frequency - Transition: 250MHz
Supplier Device Package: PG-SOT23
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 330 mW
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 290000 Stücke:
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AnzahlPrivatkunde
8955+0.055 EUR
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BSC021N08NS5ATMA1 Infineon-BSC021N08NS5-DataSheet-v02_01-EN.pdf?fileId=5546d462689a790c0168c7cb2946643e
BSC021N08NS5ATMA1
Hersteller: Infineon Technologies
Description: MOSFET TRENCH 80V TSON-8
Input Capacitance (Ciss) (Max) @ Vds: 8600 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs: 117 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Part Status: Active
Supplier Device Package: PG-TSON-8-3
Vgs(th) (Max) @ Id: 3.8V @ 146µA
Power Dissipation (Max): 214W (Tc)
Rds On (Max) @ Id, Vgs: 2.1mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 226A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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BSC021N08NS5ATMA1 Infineon-BSC021N08NS5-DataSheet-v02_01-EN.pdf?fileId=5546d462689a790c0168c7cb2946643e
BSC021N08NS5ATMA1
Hersteller: Infineon Technologies
Description: MOSFET TRENCH 80V TSON-8
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 8600 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs: 117 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Part Status: Active
Supplier Device Package: PG-TSON-8-3
Vgs(th) (Max) @ Id: 3.8V @ 146µA
Power Dissipation (Max): 214W (Tc)
Rds On (Max) @ Id, Vgs: 2.1mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 226A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
auf Bestellung 2752 Stücke:
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3+8.82 EUR
10+5.84 EUR
100+4.15 EUR
500+3.92 EUR
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ITS4880R INFN-S-A0000193379-1.pdf?t.download=true&u=5oefqw
Hersteller: Infineon Technologies
Description: ITS4880 - PROFET - SMART HIGH SI
Produkt ist nicht verfügbar
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BC80825E6433 INFNS11647-1.pdf?t.download=true&u=5oefqw
BC80825E6433
Hersteller: Infineon Technologies
Description: TRANS PNP 25V 0.5A PG-SOT23-3-11
Part Status: Active
Packaging: Bulk
Frequency - Transition: 200MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 100mA, 1V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
Operating Temperature: 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Qualification: AEC-Q101
Power - Max: 330 mW
Voltage - Collector Emitter Breakdown (Max): 25 V
Current - Collector (Ic) (Max): 500 mA
Grade: Automotive
Supplier Device Package: PG-SOT23-3-11
auf Bestellung 151000 Stücke:
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8955+0.055 EUR
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AUIRF7769L2TR INFN-S-A0002297188-1.pdf?t.download=true&u=5oefqw
AUIRF7769L2TR
Hersteller: Infineon Technologies
Description: MOSFET N-CH 100V 375A DIRECTFET
Input Capacitance (Ciss) (Max) @ Vds: 11560 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 300 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: DirectFET™ Isometric L8
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 3.3W (Ta), 125W (Tc)
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 74A, 10V
Current - Continuous Drain (Id) @ 25°C: 375A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: DirectFET™ Isometric L8
Qualification: AEC-Q101
Grade: Automotive
Packaging: Tape & Reel (TR)
auf Bestellung 4000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
4000+9.48 EUR
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TLE493DP2B6A3HTSA1 Infineon-TLE493D-P2B6-DataSheet-v01_00-EN.pdf?fileId=5546d46277fc743901785af375274815
TLE493DP2B6A3HTSA1
Hersteller: Infineon Technologies
Description: SEN HALL EFFECT SPI PG-TSOP6-6-8
Packaging: Tape & Reel (TR)
Features: Programmable
Package / Case: SOT-23-6 Thin, TSOT-23-6
Output Type: I2C
Mounting Type: Surface Mount
Axis: X, Y, Z
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 2.8V ~ 3.5V
Technology: Hall Effect
Resolution: 12 b
Sensing Range: ±160mT
Current - Supply (Max): 5mA
Supplier Device Package: PG-TSOP6-6-8
Part Status: Active
Grade: Automotive
Qualification: AEC-Q100
Produkt ist nicht verfügbar
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TLE493DP2B6A1HTSA1 Infineon-TLE493D-P2B6-DataSheet-v01_00-EN.pdf?fileId=5546d46277fc743901785af375274815
TLE493DP2B6A1HTSA1
Hersteller: Infineon Technologies
Description: SEN HALL EFFECT SPI PG-TSOP6-6-8
Packaging: Tape & Reel (TR)
Features: Programmable
Package / Case: SOT-23-6 Thin, TSOT-23-6
Output Type: I2C
Mounting Type: Surface Mount
Axis: X, Y, Z
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 2.8V ~ 3.5V
Technology: Hall Effect
Resolution: 12 b
Sensing Range: ±160mT
Current - Supply (Max): 5mA
Supplier Device Package: PG-TSOP6-6-8
Part Status: Active
Grade: Automotive
Qualification: AEC-Q100
Produkt ist nicht verfügbar
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TLE493DP2B6A2HTSA1 Infineon-TLE493D-P2B6-DataSheet-v01_00-EN.pdf?fileId=5546d46277fc743901785af375274815
TLE493DP2B6A2HTSA1
Hersteller: Infineon Technologies
Description: SEN HALL EFFECT SPI PG-TSOP6-6-8
Features: Programmable
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Output Type: I2C
Mounting Type: Surface Mount
Axis: X, Y, Z
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 2.8V ~ 3.5V
Technology: Hall Effect
Resolution: 12 b
Sensing Range: ±160mT
Current - Supply (Max): 5mA
Supplier Device Package: PG-TSOP6-6-8
Grade: Automotive
Part Status: Active
Qualification: AEC-Q100
Produkt ist nicht verfügbar
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TLE493DP2B6A0HTSA1 Infineon-TLE493D-P2B6-DataSheet-v01_00-EN.pdf?fileId=5546d46277fc743901785af375274815
TLE493DP2B6A0HTSA1
Hersteller: Infineon Technologies
Description: SEN HALL EFFECT SPI PG-TSOP6-6-8
Features: Programmable
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Output Type: I2C
Mounting Type: Surface Mount
Axis: X, Y, Z
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 2.8V ~ 3.5V
Technology: Hall Effect
Resolution: 12 b
Sensing Range: ±160mT
Current - Supply (Max): 5mA
Supplier Device Package: PG-TSOP6-6-8
Grade: Automotive
Part Status: Active
Qualification: AEC-Q100
Produkt ist nicht verfügbar
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CY96F348HSBPQCR-GSE2 Infineon-CY96345_346_CY96F345_CY96F346_F347_F348_F2MC-16FX_CY96340_Series_16-bit_Proprietary_Microcontroller_Datasheet-AdditionalTechnicalInformation-v03_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0edcaffb60a9&utm_source=cypress&ut
CY96F348HSBPQCR-GSE2
Hersteller: Infineon Technologies
Description: IC MCU 16BIT 576KB FLASH 100QFP
Packaging: Tray
Package / Case: 100-BQFP
Mounting Type: Surface Mount
Speed: 56MHz
Program Memory Size: 576KB (576K x 8)
RAM Size: 24K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: F²MC-16FX
Data Converters: A/D 24x10b SAR
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Connectivity: CANbus, EBI/EMI, I2C, LINbus, SCI, UART/USART
Peripherals: DMA, LVD, LVR, POR, PWM, WDT
Supplier Device Package: 100-QFP (14x20)
Part Status: Obsolete
Number of I/O: 82
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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SPB18P06PG Infineon-SPB18P06P-DS-v01_06-en.pdf?fileId=db3a304412b407950112b42bd62a460d
SPB18P06PG
Hersteller: Infineon Technologies
Description: SPB18P06 - 20V-250V P-CHANNEL PO
Packaging: Bulk
Package / Case: TO-263-4, D²Pak (3 Leads + Tab), TO-263AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 18.7A (Ta)
Rds On (Max) @ Id, Vgs: 130mOhm @ 13.2A, 10V
Power Dissipation (Max): 81.1W (Ta)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: PG-TO263-3-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 860 pF @ 25 V
Produkt ist nicht verfügbar
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TLE9877QTW40XUMA1 Infineon-TLE9877QTW40-DataSheet-v01_00-EN.pdf?fileId=5546d46274dd77260174e8c7597b349c
TLE9877QTW40XUMA1
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 64KB FLASH 48TQFP
Packaging: Cut Tape (CT)
Package / Case: 48-TQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 40MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 6K x 8
Operating Temperature: -40°C ~ 175°C (TJ)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 4K x 8
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 5x10b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 5.5V ~ 27V
Connectivity: LINbus, SPI, SSC, UART/USART
Peripherals: Brown-out Detect/Reset, DMA, POR, PWM, WDT
Supplier Device Package: 48-TQFP (7x7)
Part Status: Active
Number of I/O: 10
DigiKey Programmable: Not Verified
Grade: Automotive
Qualification: AEC-Q100
auf Bestellung 6153 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2+10.64 EUR
10+8.16 EUR
25+7.54 EUR
100+6.85 EUR
250+6.53 EUR
500+6.34 EUR
1000+6.18 EUR
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AIGB30N65F5ATMA1 Infineon-Semiconductor_solutions_for_hybrid_electric_and_electric_cars-ABR-v01_00-EN.pdf?fileId=5546d46269e1c019016a4a76250c4ab4
AIGB30N65F5ATMA1
Hersteller: Infineon Technologies
Description: IGBT NPT 650V 30A TO263-3-2
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Input Type: Standard
Supplier Device Package: PG-TO263-3-2
IGBT Type: NPT
Current - Collector (Ic) (Max): 30 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Produkt ist nicht verfügbar
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BTC300101TAAATMA1 BTC30010-1TAA_BTC50010-1TAA_v1.3_2-6-15.pdf
BTC300101TAAATMA1
Hersteller: Infineon Technologies
Description: IC PWR SWITCH N-CHAN 1:1 TO263-7
Grade: Automotive
Part Status: Obsolete
Supplier Device Package: PG-TO263-7-8
Ratio - Input:Output: 1:1
Current - Output (Max): 30A
Voltage - Supply (Vcc/Vdd): Not Required
Voltage - Load: 5V ~ 28V
Input Type: Non-Inverting
Output Configuration: High Side
Operating Temperature: -40°C ~ 150°C (TJ)
Switch Type: General Purpose
Interface: On/Off
Number of Outputs: 1
Mounting Type: Surface Mount
Output Type: N-Channel
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Packaging: Bulk
auf Bestellung 15299 Stücke:
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AnzahlPrivatkunde
84+6.39 EUR
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BTC30010-1TAA INFN-S-A0001300279-1.pdf?t.download=true&u=5oefqw
Hersteller: Infineon Technologies
Description: BUFFER/INVERTER PERIPHL DRIVER
auf Bestellung 9025 Stücke:
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PSB 21150 F V1.4 IPAC-X.pdf
PSB 21150 F V1.4
Hersteller: Infineon Technologies
Description: IC TELECOM INTERFACE TQFP-64
Supplier Device Package: PG-TQFP-64-1
Current - Supply: 30mA
Voltage - Supply: 3.3V
Operating Temperature: 0°C ~ 70°C
Interface: HDLC, ISDN, SCI
Function: PC Adapter Circuit
Mounting Type: Surface Mount
Package / Case: 64-LQFP
Packaging: Tray
Number of Circuits: 1
Part Status: Obsolete
Produkt ist nicht verfügbar
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PSF 21150 F V1.4 IPAC-X.pdf
PSF 21150 F V1.4
Hersteller: Infineon Technologies
Description: IC TELECOM INTERFACE TQFP-64
Number of Circuits: 1
Part Status: Discontinued at Digi-Key
Supplier Device Package: PG-TQFP-64
Current - Supply: 30mA
Voltage - Supply: 3.3V
Operating Temperature: -40°C ~ 85°C
Interface: ISDN
Function: PC Adapter Circuit
Mounting Type: Surface Mount
Package / Case: 64-LQFP
Packaging: Tray
Produkt ist nicht verfügbar
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TLE4276GVATMA4 Infineon-TLE4276-DS-v02_80-EN.pdf?fileId=5546d4626102d35a01612c4b988a6576
TLE4276GVATMA4
Hersteller: Infineon Technologies
Description: TLE4276G - OPTIREG LINEAR LOW DR
Packaging: Bulk
Package / Case: TO-263-6, D2PAK (5 Leads + Tab), TO-263BA
Output Type: Adjustable
Mounting Type: Surface Mount
Current - Output: 400mA
Operating Temperature: -40°C ~ 150°C
Output Configuration: Positive
Current - Quiescent (Iq): 200 µA
Voltage - Input (Max): 40V
Number of Regulators: 1
Supplier Device Package: PG-TO263-5-1
Voltage - Output (Max): 20V
Voltage - Output (Min/Fixed): 2.5V
Control Features: Inhibit
Part Status: Active
PSRR: 54dB (100Hz)
Voltage Dropout (Max): 0.5V @ 250mA
Protection Features: Over Current, Over Temperature, Reverse Polarity, Short Circuit
Current - Supply (Max): 25 mA
auf Bestellung 258000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
290+1.95 EUR
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IRGC25B120UB Short_Form_Cat_2016.pdf
Hersteller: Infineon Technologies
Description: IGBT CHIP
Produkt ist nicht verfügbar
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CYTT32302-56LQI48
Hersteller: Infineon Technologies
Description: IC MCU TRUETOUCH 56QFN
Packaging: Tray
Package / Case: 56-UFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: I²C, SPI
Voltage - Supply: 1.71V ~ 5.5V
Resolution (Bits): 32 b
Supplier Device Package: 56-QFN (6x6)
Touchscreen: 2 Wire Capacitive
Part Status: Obsolete
Produkt ist nicht verfügbar
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CYTT32302-56LQI48T
Hersteller: Infineon Technologies
Description: IC MCU TRUETOUCH 56QFN
Packaging: Tray
Package / Case: 56-UFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: I²C, SPI
Voltage - Supply: 1.71V ~ 5.5V
Resolution (Bits): 32 b
Supplier Device Package: 56-QFN (6x6)
Touchscreen: 2 Wire Capacitive
Part Status: Obsolete
Produkt ist nicht verfügbar
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TT32302-56LQI48
Hersteller: Infineon Technologies
Description: IC MCU TRUETOUCH
Packaging: Tray
Part Status: Obsolete
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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TT32302-56LQI48T
Hersteller: Infineon Technologies
Description: IC MCU TRUETOUCH
Packaging: Tape & Reel (TR)
Part Status: Obsolete
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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TT330N16AOFHPSA1 Infineon-TT330N-DS-v03_04-EN.pdf?fileId=5546d46269e1c019016a0c69cb4f4b54
TT330N16AOFHPSA1
Hersteller: Infineon Technologies
Description: SCR MODULE 1.6KV 520A MODULE
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 130°C
Structure: Series Connection - All SCRs
Current - Hold (Ih) (Max): 300 mA
Current - Gate Trigger (Igt) (Max): 200 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 12500A @ 50Hz
Number of SCRs, Diodes: 2 SCRs
Current - On State (It (AV)) (Max): 330 A
Voltage - Gate Trigger (Vgt) (Max): 2 V
Part Status: Active
Current - On State (It (RMS)) (Max): 520 A
Voltage - Off State: 1.6 kV
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BSR302KL6327 Infineon-BSR302N-DS-v01_03-en.pdf?fileId=db3a3043156fd573011622e789f21f7c
BSR302KL6327
Hersteller: Infineon Technologies
Description: SMALL SIGNAL MOSFET
Packaging: Bulk
Part Status: Active
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3000+0.19 EUR
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IPL65R195C7AUMA1 Infineon-IPL65R195C7-DS-v02_00-en.pdf?fileId=5546d46145da30e80145f07420a26b18
IPL65R195C7AUMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 650V 12A 4VSON
Input Capacitance (Ciss) (Max) @ Vds: 1150 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PG-VSON-4
Vgs(th) (Max) @ Id: 4V @ 290µA
Power Dissipation (Max): 75W (Tc)
Rds On (Max) @ Id, Vgs: 195mOhm @ 2.9A, 10V
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 4-PowerTSFN
Packaging: Cut Tape (CT)
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3+7.64 EUR
10+5.02 EUR
100+3.52 EUR
500+2.93 EUR
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IST011N06NM5AUMA1 Infineon-IST011N06NM5-DataSheet-v02_00-EN.pdf?fileId=5546d46277921c320177aa91e7c17ec7
IST011N06NM5AUMA1
Hersteller: Infineon Technologies
Description: TRENCH 40<-<100V PG-HSOF-5
Packaging: Tape & Reel (TR)
Package / Case: 5-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 38A (Ta), 399A (Tc)
Rds On (Max) @ Id, Vgs: 1.1mOhm @ 100A, 10V
Power Dissipation (Max): 3.8W (Ta), 313W (Tc)
Vgs(th) (Max) @ Id: 3.3V @ 148µA
Supplier Device Package: PG-HSOF-5-4
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 154 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8100 pF @ 30 V
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2000+3.4 EUR
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IST011N06NM5AUMA1 Infineon-IST011N06NM5-DataSheet-v02_00-EN.pdf?fileId=5546d46277921c320177aa91e7c17ec7
IST011N06NM5AUMA1
Hersteller: Infineon Technologies
Description: TRENCH 40<-<100V PG-HSOF-5
Packaging: Cut Tape (CT)
Package / Case: 5-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 38A (Ta), 399A (Tc)
Rds On (Max) @ Id, Vgs: 1.1mOhm @ 100A, 10V
Power Dissipation (Max): 3.8W (Ta), 313W (Tc)
Vgs(th) (Max) @ Id: 3.3V @ 148µA
Supplier Device Package: PG-HSOF-5-4
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 154 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8100 pF @ 30 V
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3+9.2 EUR
10+6.12 EUR
100+4.37 EUR
500+4.18 EUR
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BGS1711MC222EE6433XUSA1
Hersteller: Infineon Technologies
Description: IC RF SWITCH
Part Status: Active
Packaging: Bulk
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15000+0.039 EUR
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BTS3207NNT BTS3207N_2008_04_14.pdf
BTS3207NNT
Hersteller: Infineon Technologies
Description: IC PWR SWTCH N-CHAN 1:1 SOT223-4
Part Status: Obsolete
Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage
Supplier Device Package: PG-SOT223-4
Ratio - Input:Output: 1:1
Current - Output (Max): 640mA
Voltage - Supply (Vcc/Vdd): Not Required
Voltage - Load: 42V (Max)
Input Type: Non-Inverting
Rds On (Typ): 500mOhm (Max)
Output Configuration: Low Side
Operating Temperature: -40°C ~ 150°C (TJ)
Switch Type: General Purpose
Interface: On/Off
Number of Outputs: 1
Mounting Type: Surface Mount
Output Type: N-Channel
Package / Case: TO-261-4, TO-261AA
Features: Auto Restart
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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FF400R16KF4NOSA1 INFNS09012-1.pdf?t.download=true&u=5oefqw
Hersteller: Infineon Technologies
Description: IGBT MODULE 1600V 400A 3100W
Configuration: 2 Independent
Input: Standard
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Bulk
Input Capacitance (Cies) @ Vce: 65 nF @ 25 V
Current - Collector Cutoff (Max): 3 mA
Power - Max: 3100 W
Voltage - Collector Emitter Breakdown (Max): 1600 V
Current - Collector (Ic) (Max): 400 A
NTC Thermistor: No
Vce(on) (Max) @ Vge, Ic: 3.7V @ 15V, 400A
Operating Temperature: 150°C (TJ)
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1+2262.95 EUR
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FF400R12KT4HOSA1 INFN-S-A0002272792-1.pdf?t.download=true&u=5oefqw
Hersteller: Infineon Technologies
Description: IGBT MODULE
Packaging: Bulk
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3+283.27 EUR
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FF400R12KT4PBOSA1 INFN-S-A0003614526-1.pdf?t.download=true&u=5oefqw
Hersteller: Infineon Technologies
Description: FF400R12KT4P - 1200 V, 400 A DUA
Input Capacitance (Cies) @ Vce: 28000 pF @ 25 V
Current - Collector Cutoff (Max): 5 mA
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 400 A
IGBT Type: Trench Field Stop
Supplier Device Package: AG-62MMHB
NTC Thermistor: No
Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 400A
Operating Temperature: -40°C ~ 150°C (TJ)
Configuration: Dual, Common Source
Input: Standard
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Bulk
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3+283.27 EUR
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FF400R17KF4CNOSA1
FF400R17KF4CNOSA1
Hersteller: Infineon Technologies
Description: FF400R17 - IGBT MODULE
Packaging: Bulk
Produkt ist nicht verfügbar
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B505CA4EMCAXP INFNS03052-1.pdf?t.download=true&u=5oefqw
B505CA4EMCAXP
Hersteller: Infineon Technologies
Description: IC MCU 8BIT 32KB OTP 44MQFP
Packaging: Bulk
Package / Case: 44-QFP
Mounting Type: Surface Mount
Speed: 20MHz
Program Memory Size: 32KB (32K x 8)
RAM Size: 1.25K x 8
Operating Temperature: 0°C ~ 70°C (TA)
Oscillator Type: External
Program Memory Type: OTP
Core Processor: C500
Data Converters: A/D 8x10b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 4.25V ~ 5.5V
Connectivity: CANbus, EBI/EMI, UART/USART
Peripherals: POR, PWM, WDT
Supplier Device Package: PG-MQFP-44-2
Part Status: Active
Number of I/O: 34
DigiKey Programmable: Not Verified
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27+19.93 EUR
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C164CM4EFABFXUMA1 C164CM_SM.pdf
C164CM4EFABFXUMA1
Hersteller: Infineon Technologies
Description: IC MCU 16BIT 32KB OTP 64TQFP
Packaging: Bulk
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Speed: 20MHz
Program Memory Size: 32KB (32K x 8)
RAM Size: 2K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External
Program Memory Type: OTP
Core Processor: C166
Data Converters: A/D 8x10b
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 4.5V ~ 5.5V
Connectivity: CANbus, EBI/EMI, SPI, UART/USART
Peripherals: POR, PWM, WDT
Supplier Device Package: P-TQFP-64-4
Part Status: Obsolete
Number of I/O: 50
DigiKey Programmable: Verified
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6+91.96 EUR
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CYW20707UA2KFFB4G Infineon-CYW20707_Bluetooth_SoC_for_Embedded_Wireless_Devices_Datasheet-AdditionalTechnicalInformation-v09_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee1ecf86806&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_
CYW20707UA2KFFB4G
Hersteller: Infineon Technologies
Description: IC RF TXRX+MCU BLE 49FCBGA
Frequency: 2.4GHz
Mounting Type: Surface Mount
Sensitivity: -96dBm
Package / Case: 49-VFBGA, FCBGA
Packaging: Tray
DigiKey Programmable: Not Verified
Part Status: Active
Serial Interfaces: I2C, I2S, SPI, UART
RF Family/Standard: Bluetooth
Modulation: 4DQPSK, 8DPSK, GFSK
GPIO: 24
Supplier Device Package: 49-FCBGA (4.5x4)
Current - Transmitting: 60mA
Data Rate (Max): 3Mbps
Current - Receiving: 26mA
Protocol: Bluetooth v4.2
Power - Output: 12dBm
Voltage - Supply: 3.3V
Operating Temperature: -30°C ~ 85°C
Type: TxRx + MCU
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12+1.78 EUR
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CYW20707UA1KFFB4GT Infineon-CYW20707_Bluetooth_SoC_for_Embedded_Wireless_Devices_Datasheet-AdditionalTechnicalInformation-v09_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee1ecf86806&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_
CYW20707UA1KFFB4GT
Hersteller: Infineon Technologies
Description: IC RF TXRX+MCU BLE 49FCBGA
DigiKey Programmable: Not Verified
Serial Interfaces: I2S, SPI, UART
RF Family/Standard: Bluetooth
GPIO: 8
Supplier Device Package: 49-FCBGA (4.5x4)
Current - Transmitting: 60mA
Data Rate (Max): 2Mbps
Current - Receiving: 26.4mA
Protocol: Bluetooth v4.2
Power - Output: 9dBm
Voltage - Supply: 3.3V
Operating Temperature: -30°C ~ 85°C
Type: TxRx + MCU
Frequency: 2.4GHz
Mounting Type: Surface Mount
Sensitivity: -96.5dBm
Package / Case: 49-VFBGA, FCBGA
Packaging: Tape & Reel (TR)
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2500+2.55 EUR
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CYW20707UA1KFFB4G Infineon-CYW20707_Bluetooth_SoC_for_Embedded_Wireless_Devices_Datasheet-AdditionalTechnicalInformation-v09_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee1ecf86806&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_
CYW20707UA1KFFB4G
Hersteller: Infineon Technologies
Description: IC RF TXRX+MCU BLE 49FCBGA
DigiKey Programmable: Not Verified
Serial Interfaces: I2S, SPI, UART
RF Family/Standard: Bluetooth
GPIO: 8
Supplier Device Package: 49-FCBGA (4.5x4)
Current - Transmitting: 60mA
Data Rate (Max): 2Mbps
Current - Receiving: 26.4mA
Protocol: Bluetooth v4.2
Power - Output: 9dBm
Voltage - Supply: 3.3V
Operating Temperature: -30°C ~ 85°C
Type: TxRx + MCU
Frequency: 2.4GHz
Mounting Type: Surface Mount
Sensitivity: -96.5dBm
Package / Case: 49-VFBGA, FCBGA
Packaging: Tray
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9+2.53 EUR
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CYW20706UA1KFFB4G download
CYW20706UA1KFFB4G
Hersteller: Infineon Technologies
Description: IC RF TXRX+MCU BLE 49FCBGA
Packaging: Tray
Package / Case: 49-VFBGA, FCBGA
Sensitivity: -96.5dBm
Mounting Type: Surface Mount
Frequency: 2.4GHz
Memory Size: 848kB ROM, 352kB RAM
Type: TxRx + MCU
Operating Temperature: -30°C ~ 85°C
Voltage - Supply: 3.3V
Power - Output: 12dBm
Protocol: Bluetooth v4.2
Current - Receiving: 12.5mA
Data Rate (Max): 2Mbps
Current - Transmitting: 26.5mA
Supplier Device Package: 49-FCBGA (4.5x4)
GPIO: 7
RF Family/Standard: Bluetooth
Serial Interfaces: I2C, I2S, SPI, UART
DigiKey Programmable: Not Verified
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7+3.01 EUR
10+2.58 EUR
25+2.43 EUR
80+2.24 EUR
230+2.08 EUR
490+1.98 EUR
980+1.89 EUR
4900+1.7 EUR
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CYW20707UA1KFFB1G download
CYW20707UA1KFFB1G
Hersteller: Infineon Technologies
Description: IC RF TXRX+MCU BLE 49FCBGA
Packaging: Tray
Package / Case: 49-VFBGA, FCBGA
Sensitivity: -96.5dBm
Mounting Type: Surface Mount
Frequency: 2.4GHz
Type: TxRx + MCU
Operating Temperature: -30°C ~ 85°C
Voltage - Supply: 3.3V
Power - Output: 9dBm
Protocol: Bluetooth v4.2
Current - Receiving: 26.4mA
Data Rate (Max): 2Mbps
Current - Transmitting: 60mA
Supplier Device Package: 49-FCBGA (4.5x4)
GPIO: 8
RF Family/Standard: Bluetooth
Serial Interfaces: I2S, SPI, UART
DigiKey Programmable: Not Verified
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9+2.57 EUR
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CYW20742A2KFB1GT 5047
CYW20742A2KFB1GT
Hersteller: Infineon Technologies
Description: IC RF SGL CHIP BLE 81FBGA
Packaging: Tape & Reel (TR)
Package / Case: 81-TFBGA
Mounting Type: Surface Mount
Supplier Device Package: 81-FBGA (8x8)
DigiKey Programmable: Not Verified
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3000+2.07 EUR
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CYW20745A0KFBGT Infineon-CYW20745_ROM_Based_Single_Microphone_Headset_IC_With_Voice_Command_Recognition_Datasheet-AdditionalTechnicalInformation-v04_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee213ca6861&utm_source=cypress&utm_medium=referral&utm
CYW20745A0KFBGT
Hersteller: Infineon Technologies
Description: IC RF BLUETOOTH 64FBGA
Packaging: Tape & Reel (TR)
Package / Case: 64-VFBGA
Mounting Type: Surface Mount
Supplier Device Package: 64-FBGA (7x7)
DigiKey Programmable: Not Verified
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3000+2.36 EUR
6000+2.27 EUR
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CYW20732E CYW20732E_Web.pdf
CYW20732E
Hersteller: Infineon Technologies
Description: IOT BLUETOOTH 802.15.4
Packaging: Tray
DigiKey Programmable: Not Verified
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3+8.21 EUR
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BF999E6812HTSA1
Hersteller: Infineon Technologies
Description: RF MOSFET 10V SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Current Rating (Amps): 16mA
Mounting Type: Surface Mount
Frequency: 300MHz
Configuration: N-Channel
Gain: 27dB
Technology: MOSFET (Metal Oxide)
Noise Figure: 2.1dB
Supplier Device Package: PG-SOT23
Grade: Automotive
Part Status: Last Time Buy
Voltage - Rated: 20 V
Voltage - Test: 10 V
Current - Test: 10 mA
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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IMC099TT038XUMA1 Infineon-IMC100-DS-v01_03-EN.pdf?fileId=5546d46265487f7b016584a0147e7660
IMC099TT038XUMA1
Hersteller: Infineon Technologies
Description: IC MOTOR CONTROL TSSOP-38
Motor Type - AC, DC: AC, Synchronous
Supplier Device Package: PG-TSSOP-38-9
Applications: Home Appliance
Voltage - Supply: 3V ~ 5.5V
Operating Temperature: -40°C ~ 105°C (TA)
Interface: Analog, PWM
Current - Output: 50mA
Function: Controller
Mounting Type: Surface Mount
Package / Case: 38-TFSOP (0.173", 4.40mm Width)
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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BSM30GD60DLCE3224 BSM30GD60DLCE3224_Rev3_2006-01-31.pdf
Hersteller: Infineon Technologies
Description: IGBT MODULE 600V 40A 135W
Produkt ist nicht verfügbar
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TLE42672GATMA2 INFNS28001-1.pdf?t.download=true&u=ovmfp3
TLE42672GATMA2
Hersteller: Infineon Technologies
Description: IC REG LIN 5V 400MA PG-TO263-7-1
Packaging: Bulk
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 400mA
Operating Temperature: -40°C ~ 150°C
Output Configuration: Positive
Current - Quiescent (Iq): 4 mA
Voltage - Input (Max): 40V
Number of Regulators: 1
Supplier Device Package: PG-TO263-7-1
Voltage - Output (Min/Fixed): 5V
Control Features: Inhibit, Reset
Grade: Automotive
Part Status: Active
PSRR: 54dB (100Hz)
Voltage Dropout (Max): 0.6V @ 400mA
Protection Features: Over Current, Over Temperature, Reverse Polarity, Short Circuit, Transient Voltage
Current - Supply (Max): 80 mA
Qualification: AEC-Q100
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189+2.86 EUR
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FS50R12KT4B15BOSA1 Infineon-FS50R12KT4_B15-DS-v03_00-en_de.pdf?fileId=db3a30431a47d73d011a4955bbac00fc
FS50R12KT4B15BOSA1
Hersteller: Infineon Technologies
Description: IGBT MOD 1200V 50A 280W
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F3L300R12MT4B23BOSA1 Infineon-F3L300R12MT4_B23-DS-v03_00-en_de.pdf?fileId=db3a304333b8a7ca0133f9d470e0434c
F3L300R12MT4B23BOSA1
Hersteller: Infineon Technologies
Description: IGBT MOD 1200V 450A 1550W MOD
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 300A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 450 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 1550 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 19 nF @ 25 V
auf Bestellung 963 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1+504.61 EUR
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FF11MR12W1M1B70BPSA1 Infineon-FF11MR12W1M1_B70-DataSheet-v02_00-EN.pdf?fileId=5546d46277fc74390178365dff877ca9
FF11MR12W1M1B70BPSA1
Hersteller: Infineon Technologies
Description: MOSFET 2N-CH 1200V AG-EASY1B
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Silicon Carbide (SiC)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 100A (Tj)
Input Capacitance (Ciss) (Max) @ Vds: 7360pF @ 800V
Rds On (Max) @ Id, Vgs: 11.3mOhm @ 100A, 15V
Gate Charge (Qg) (Max) @ Vgs: 248nC @ 15V
Vgs(th) (Max) @ Id: 5.55V @ 40mA
Supplier Device Package: AG-EASY1B
Part Status: Obsolete
Produkt ist nicht verfügbar
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92-0263PBF
Hersteller: Infineon Technologies
Description: IC MOSFET
Produkt ist nicht verfügbar
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IPU60R600C6 INFNS17575-1.pdf?t.download=true&u=5oefqw
IPU60R600C6
Hersteller: Infineon Technologies
Description: N-CHANNEL POWER MOSFET
Produkt ist nicht verfügbar
Mindestbestellmenge: 25 Stücke
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IPP60R600C6 INFN-S-A0001299750-1.pdf?t.download=true&u=5oefqw
IPP60R600C6
Hersteller: Infineon Technologies
Description: 7.3A, 600V, 0.6OHM, N-CHANNEL MO
Produkt ist nicht verfügbar
Mindestbestellmenge: 362 Stücke
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BSZ009NE2LS5ATMA1 Infineon-BSZ009NE2LS5-DS-v02_00-EN.pdf?fileId=5546d46269e1c019016a501c81dd0f7e
BSZ009NE2LS5ATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 25V 39A/40A TSDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 39A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs: 900mOhm @ 20A, 10V
Power Dissipation (Max): 2.1W (Ta), 69W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TSDSON-8-FL
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 124 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5500 pF @ 12 V
auf Bestellung 9540 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
5+4.96 EUR
10+4.49 EUR
25+4 EUR
100+3.61 EUR
250+3.2 EUR
500+2.8 EUR
1000+2.32 EUR
Mindestbestellmenge: 5 Stücke
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