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TLE9562QXXUMA1 TLE9562QXXUMA1 Infineon Technologies Infineon-TLE9562QX-DataSheet-v01_00-EN.pdf?fileId=5546d4627883d7e00178ca35c75d3879 Description: BLDC_DRIVER_IC PG-VQFN-48
Packaging: Cut Tape (CT)
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 250mA
Interface: SPI
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Pre-Driver - Half Bridge (4)
Voltage - Supply: 6V ~ 28V
Technology: NMOS
Voltage - Load: 6V ~ 28V
Supplier Device Package: PG-VQFN-48-31
Motor Type - AC, DC: Brushed DC
Part Status: Active
Grade: Automotive
Qualification: AEC-Q100
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
3+6.79 EUR
10+5.14 EUR
25+4.72 EUR
100+4.27 EUR
250+4.05 EUR
500+3.92 EUR
1000+3.81 EUR
Mindestbestellmenge: 3
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TLE95613QXXUMA1 TLE95613QXXUMA1 Infineon Technologies Infineon-TLE9561-3QX-DataSheet-v01_00-EN.pdf?fileId=5546d4627883d7e00178ca359c2e386d Description: BLDC_DRIVER_IC PG-VQFN-48
Packaging: Cut Tape (CT)
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 250mA
Interface: SPI
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Pre-Driver - Half Bridge (4)
Voltage - Supply: 6V ~ 28V
Technology: NMOS
Voltage - Load: 6V ~ 28V
Supplier Device Package: PG-VQFN-48-31
Motor Type - AC, DC: Brushed DC
Part Status: Active
Grade: Automotive
Qualification: AEC-Q100
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
3+6.72 EUR
10+5.08 EUR
25+4.67 EUR
100+4.22 EUR
250+4 EUR
500+3.87 EUR
1000+3.77 EUR
Mindestbestellmenge: 3
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TLE95623QXXUMA1 TLE95623QXXUMA1 Infineon Technologies Infineon-TLE9562-3QX-DataSheet-v01_00-EN.pdf?fileId=5546d4627883d7e00178ca35b1603873 Description: BLDC_DRIVER_IC PG-VQFN-48
Packaging: Cut Tape (CT)
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 250mA
Interface: SPI
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Pre-Driver - Half Bridge (4)
Voltage - Supply: 6V ~ 28V
Technology: NMOS
Voltage - Load: 6V ~ 28V
Supplier Device Package: PG-VQFN-48-31
Motor Type - AC, DC: Brushed DC
Part Status: Active
Grade: Automotive
Qualification: AEC-Q100
auf Bestellung 1045 Stücke:
Lieferzeit 10-14 Tag (e)
3+6.95 EUR
10+5.27 EUR
25+4.84 EUR
100+4.38 EUR
250+4.16 EUR
500+4.02 EUR
1000+3.91 EUR
Mindestbestellmenge: 3
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IPTC012N08NM5ATMA1 IPTC012N08NM5ATMA1 Infineon Technologies Infineon-IPTC012N08NM5-DataSheet-v02_00-EN.pdf?fileId=5546d46277921c320177a519df392538 Description: MOSFET N-CH 80V 40A/396A HDSOP
Packaging: Cut Tape (CT)
Package / Case: 16-PowerSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Ta), 396A (Tc)
Rds On (Max) @ Id, Vgs: 1.2mOhm @ 100A, 10V
Power Dissipation (Max): 3.8W (Ta), 375W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 275µA
Supplier Device Package: PG-HDSOP-16-2
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 219 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 16000 pF @ 40 V
auf Bestellung 136 Stücke:
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2+14.77 EUR
10+10.1 EUR
100+7.46 EUR
Mindestbestellmenge: 2
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FF225R65T3E3BPSA1 FF225R65T3E3BPSA1 Infineon Technologies Infineon-FF225R65T3E3-DataSheet-v01_10-EN.pdf?fileId=5546d4627a0b0c7b017a0ea3ac750464 Description: IHV IHM T XHP 3 3-6 5K AG-XHP3K6
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: 2 Independent
Operating Temperature: 125°C (TJ)
Vce(on) (Max) @ Vge, Ic: 3.4V @ 15V, 225A
NTC Thermistor: No
Supplier Device Package: AG-XHP3K65
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 225 A
Voltage - Collector Emitter Breakdown (Max): 5900 V
Power - Max: 1000000 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 65.6 nF @ 25 V
Produkt ist nicht verfügbar
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LEDFRONTHBLBREFTOBO1 LEDFRONTHBLBREFTOBO1 Infineon Technologies Infineon-TLD5099EP-Front_light-SEPIC-UserManual-v01_00-EN.pdf?fileId=5546d46274306ce1017433fa5bd560d9 Description: DEV KIT
Packaging: Bulk
Function: Clock Generator
Type: Timing
Supplied Contents: Board(s)
Part Status: Active
auf Bestellung 5 Stücke:
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1+386.6 EUR
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FS25R12W1T4PBPSA1 Infineon Technologies Description: IGBT MODULE 1200V 45A 205W EASY
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.25V @ 15V, 25A
NTC Thermistor: Yes
Supplier Device Package: AG-EASY1B-1
IGBT Type: Trench Field Stop
Part Status: Obsolete
Current - Collector (Ic) (Max): 45 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 205 W
Current - Collector Cutoff (Max): 1 mA
Produkt ist nicht verfügbar
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FS75R07N2E4_B11 FS75R07N2E4_B11 Infineon Technologies INFNS28594-1.pdf?t.download=true&u=5oefqw Description: FS75R07 - IGBT MODULE
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 75A
NTC Thermistor: Yes
Supplier Device Package: AG-ECONO2B
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Power - Max: 250 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 4.6 nF @ 25 V
Produkt ist nicht verfügbar
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FS75R07N2E4BOSA1 Infineon Technologies Infineon-FS75R07N2E4-DS-v02_00-en_de.pdf?fileId=db3a30432f5008fe012f52f916333979 Description: IGBT MODULE 650V 75A 250W
Produkt ist nicht verfügbar
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FS75R07N2E4B11BOSA1 FS75R07N2E4B11BOSA1 Infineon Technologies Infineon-FS75R07N2E4_B11-DS-v02_00-en_de.pdf?fileId=db3a3043300464130130401d2e50571e Description: IGBT MODULE 650V 75A 250W
Produkt ist nicht verfügbar
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FS75R07N2E4B11BOSA1 FS75R07N2E4B11BOSA1 Infineon Technologies Infineon-FS75R07N2E4_B11-DS-v02_00-en_de.pdf?fileId=db3a3043300464130130401d2e50571e Description: FS75R07 - IGBT MODULE
Produkt ist nicht verfügbar
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IPDD60R055CFD7XTMA1 IPDD60R055CFD7XTMA1 Infineon Technologies Infineon-IPDD60R055CFD7-DataSheet-v02_00-EN.pdf?fileId=5546d4627506bb3201751c133bde4271 Description: MOSFET N-CH 600V 52A HDSOP-10
Packaging: Tape & Reel (TR)
Package / Case: 10-PowerSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 52A (Tc)
Rds On (Max) @ Id, Vgs: 55mOhm @ 15.1A, 10V
Power Dissipation (Max): 329W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 760µA
Supplier Device Package: PG-HDSOP-10-1
Part Status: Active
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 67 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2724 pF @ 400 V
Produkt ist nicht verfügbar
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IPDD60R055CFD7XTMA1 IPDD60R055CFD7XTMA1 Infineon Technologies Infineon-IPDD60R055CFD7-DataSheet-v02_00-EN.pdf?fileId=5546d4627506bb3201751c133bde4271 Description: MOSFET N-CH 600V 52A HDSOP-10
Packaging: Cut Tape (CT)
Package / Case: 10-PowerSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 52A (Tc)
Rds On (Max) @ Id, Vgs: 55mOhm @ 15.1A, 10V
Power Dissipation (Max): 329W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 760µA
Supplier Device Package: PG-HDSOP-10-1
Part Status: Active
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 67 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2724 pF @ 400 V
auf Bestellung 1335 Stücke:
Lieferzeit 10-14 Tag (e)
2+11.3 EUR
10+8.01 EUR
100+5.92 EUR
500+5.06 EUR
Mindestbestellmenge: 2
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IPDD60R045CFD7XTMA1 IPDD60R045CFD7XTMA1 Infineon Technologies Infineon-IPDD60R045CFD7-DataSheet-v02_00-EN.pdf?fileId=5546d4627506bb3201751c2e742942a8 Description: MOSFET N-CH 600V 61A HDSOP-10
Packaging: Tape & Reel (TR)
Package / Case: 10-PowerSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 61A (Tc)
Rds On (Max) @ Id, Vgs: 45mOhm @ 18A, 10V
Power Dissipation (Max): 379W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 900µA
Supplier Device Package: PG-HDSOP-10-1
Part Status: Active
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 79 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3194 pF @ 400 V
Produkt ist nicht verfügbar
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IPDD60R075CFD7XTMA1 IPDD60R075CFD7XTMA1 Infineon Technologies Infineon-IPDD60R075CFD7-DataSheet-v02_00-EN.pdf?fileId=5546d4627506bb3201751c00e6964257 Description: MOSFET N-CH 600V 40A HDSOP-10
Packaging: Tape & Reel (TR)
Package / Case: 10-PowerSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 75mOhm @ 11.4A, 10V
Power Dissipation (Max): 266W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 570µA
Supplier Device Package: PG-HDSOP-10-1
Part Status: Active
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2102 pF @ 400 V
Produkt ist nicht verfügbar
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IPDD60R075CFD7XTMA1 IPDD60R075CFD7XTMA1 Infineon Technologies Infineon-IPDD60R075CFD7-DataSheet-v02_00-EN.pdf?fileId=5546d4627506bb3201751c00e6964257 Description: MOSFET N-CH 600V 40A HDSOP-10
Packaging: Cut Tape (CT)
Package / Case: 10-PowerSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 75mOhm @ 11.4A, 10V
Power Dissipation (Max): 266W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 570µA
Supplier Device Package: PG-HDSOP-10-1
Part Status: Active
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2102 pF @ 400 V
auf Bestellung 137 Stücke:
Lieferzeit 10-14 Tag (e)
2+9.31 EUR
10+6.25 EUR
100+4.51 EUR
Mindestbestellmenge: 2
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CY7C1387D-167AXC CY7C1387D-167AXC Infineon Technologies ?utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Description: IC SRAM 18MBIT PAR 100TQFP
auf Bestellung 348 Stücke:
Lieferzeit 10-14 Tag (e)
13+41.88 EUR
Mindestbestellmenge: 13
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IPT60R075CFD7XTMA1 IPT60R075CFD7XTMA1 Infineon Technologies Infineon-IPT60R075CFD7-DataSheet-v02_01-EN.pdf?fileId=5546d46271bf4f920171df2a0edb30e3 Description: MOSFET N-CH 600V 33A 8HSOF
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 33A (Tc)
Rds On (Max) @ Id, Vgs: 75mOhm @ 11.4A, 10V
Power Dissipation (Max): 188W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 570µA
Supplier Device Package: PG-HSOF-8-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2103 pF @ 400 V
auf Bestellung 1099 Stücke:
Lieferzeit 10-14 Tag (e)
2+9.61 EUR
10+6.76 EUR
100+4.88 EUR
500+4.09 EUR
Mindestbestellmenge: 2
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IPT60R040S7XTMA1 IPT60R040S7XTMA1 Infineon Technologies Infineon-IPT60R040S7-DataSheet-v02_01-EN.pdf?fileId=5546d4626bb628d7016bc266ace577b2 Description: MOSFET N-CH 600V 13A 8HSOF
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
Rds On (Max) @ Id, Vgs: 40mOhm @ 13A, 12V
Power Dissipation (Max): 245W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 790µA
Supplier Device Package: PG-HSOF-8-2
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 83 nC @ 12 V
Input Capacitance (Ciss) (Max) @ Vds: 3127 pF @ 300 V
Produkt ist nicht verfügbar
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IPT60R040S7XTMA1 IPT60R040S7XTMA1 Infineon Technologies Infineon-IPT60R040S7-DataSheet-v02_01-EN.pdf?fileId=5546d4626bb628d7016bc266ace577b2 Description: MOSFET N-CH 600V 13A 8HSOF
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
Rds On (Max) @ Id, Vgs: 40mOhm @ 13A, 12V
Power Dissipation (Max): 245W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 790µA
Supplier Device Package: PG-HSOF-8-2
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 83 nC @ 12 V
Input Capacitance (Ciss) (Max) @ Vds: 3127 pF @ 300 V
auf Bestellung 1965 Stücke:
Lieferzeit 10-14 Tag (e)
2+12.41 EUR
10+8.41 EUR
100+6.16 EUR
500+5.43 EUR
Mindestbestellmenge: 2
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IPT60R045CFD7XTMA1 IPT60R045CFD7XTMA1 Infineon Technologies Infineon-IPT60R045CFD7-DataSheet-v02_01-EN.pdf?fileId=5546d46271bf4f920171df2a61cc30ec Description: MOSFET N-CH 600V 52A 8HSOF
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 52A (Tc)
Rds On (Max) @ Id, Vgs: 45mOhm @ 18A, 10V
Power Dissipation (Max): 270W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 900µA
Supplier Device Package: PG-HSOF-8-2
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 79 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3194 pF @ 400 V
auf Bestellung 3758 Stücke:
Lieferzeit 10-14 Tag (e)
2+11.92 EUR
10+8.1 EUR
100+6.21 EUR
Mindestbestellmenge: 2
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IPT60R035CFD7XTMA1 IPT60R035CFD7XTMA1 Infineon Technologies Infineon-IPT60R035CFD7-DataSheet-v02_01-EN.pdf?fileId=5546d46271bf4f920171df2a2c2130e6 Description: MOSFET N-CH 600V 67A 8HSOF
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 67A (Tc)
Rds On (Max) @ Id, Vgs: 35mOhm @ 24.9A, 10V
Power Dissipation (Max): 351W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1.25mA
Supplier Device Package: PG-HSOF-8-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 109 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4354 pF @ 400 V
auf Bestellung 1989 Stücke:
Lieferzeit 10-14 Tag (e)
2+14.27 EUR
10+9.79 EUR
100+7.88 EUR
Mindestbestellmenge: 2
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IPT60R145CFD7XTMA1 IPT60R145CFD7XTMA1 Infineon Technologies infineon-ipt60r145cfd7-datasheet-en.pdf Description: MOSFET N-CH 600V 19A 8HSOF
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Tc)
Rds On (Max) @ Id, Vgs: 145mOhm @ 6A, 10V
Power Dissipation (Max): 116W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 300µA
Supplier Device Package: PG-HSOF-8-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1199 pF @ 400 V
Produkt ist nicht verfügbar
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IPT60R145CFD7XTMA1 IPT60R145CFD7XTMA1 Infineon Technologies infineon-ipt60r145cfd7-datasheet-en.pdf Description: MOSFET N-CH 600V 19A 8HSOF
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Tc)
Rds On (Max) @ Id, Vgs: 145mOhm @ 6A, 10V
Power Dissipation (Max): 116W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 300µA
Supplier Device Package: PG-HSOF-8-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1199 pF @ 400 V
auf Bestellung 1133 Stücke:
Lieferzeit 10-14 Tag (e)
4+5.86 EUR
10+3.86 EUR
100+2.71 EUR
500+2.22 EUR
1000+2.06 EUR
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IPT60R105CFD7XTMA1 IPT60R105CFD7XTMA1 Infineon Technologies Infineon-IPT60R105CFD7-DataSheet-v02_01-EN.pdf?fileId=5546d46271bf4f920171df2a7e5530ef Description: MOSFET N-CH 600V 24A 8HSOF
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 105mOhm @ 7.8A, 10V
Power Dissipation (Max): 140W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 390µA
Supplier Device Package: PG-HSOF-8-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1503 pF @ 400 V
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IPT60R105CFD7XTMA1 IPT60R105CFD7XTMA1 Infineon Technologies Infineon-IPT60R105CFD7-DataSheet-v02_01-EN.pdf?fileId=5546d46271bf4f920171df2a7e5530ef Description: MOSFET N-CH 600V 24A 8HSOF
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 105mOhm @ 7.8A, 10V
Power Dissipation (Max): 140W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 390µA
Supplier Device Package: PG-HSOF-8-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1503 pF @ 400 V
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TLS208D1EJV33XUMA1 TLS208D1EJV33XUMA1 Infineon Technologies INFN-S-A0001299229-1.pdf?t.download=true&u=5oefqw Description: IC REG LINEAR 3.3V 800MA 8DSO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 800mA
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 170 µA
Voltage - Input (Max): 18V
Number of Regulators: 1
Supplier Device Package: PG-DSO-8
Voltage - Output (Min/Fixed): 3.3V
Control Features: Enable, Reset
Part Status: Active
PSRR: 62dB (10kHz)
Voltage Dropout (Max): 1V @ 800mA
Protection Features: Over Current, Over Temperature, Short Circuit
Current - Supply (Max): 250 µA
Grade: Automotive
Qualification: AEC-Q100
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FF600R07ME4B11BPSA1 FF600R07ME4B11BPSA1 Infineon Technologies Infineon-FF600R07ME4_B11-DS-v03_01-EN.pdf?fileId=db3a304334c41e910134e5a1098f5412 Description: MEDIUM POWER ECONO
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: 2 Independent
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 600A
NTC Thermistor: Yes
Supplier Device Package: AG-ECONOD-3
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 700 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Power - Max: 1800 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 37 nF @ 25 V
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BFP540 BFP540 Infineon Technologies INFNS30134-1.pdf?t.download=true&u=5oefqw Description: RF SMALL SIGNAL BIPOLAR TRANSIST
Packaging: Bulk
Part Status: Active
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BFP 540F E6327 BFP 540F E6327 Infineon Technologies BFP%20540F%20E6327.pdf Description: RF TRANS NPN 5V 30GHZ 4-TSFP
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, Flat Leads
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 20dB
Power - Max: 250mW
Current - Collector (Ic) (Max): 80mA
Voltage - Collector Emitter Breakdown (Max): 5V
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 20mA, 3.5V
Frequency - Transition: 30GHz
Noise Figure (dB Typ @ f): 0.9dB ~ 1.4dB @ 1.8GHz
Supplier Device Package: 4-TSFP
Part Status: Obsolete
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BFP540FESDE6327 BFP540FESDE6327 Infineon Technologies Infineon-BFP540ESD-DS-v02_00-EN.pdf?fileId=5546d462689a790c01690f0382ea3920 Description: RF TRANS NPN 5V 30GHZ 4-TSFP
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, Flat Leads
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 20dB
Power - Max: 250mW
Current - Collector (Ic) (Max): 80mA
Voltage - Collector Emitter Breakdown (Max): 5V
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 20mA, 3.5V
Frequency - Transition: 30GHz
Noise Figure (dB Typ @ f): 0.9dB ~ 1.4dB @ 1.8GHz
Supplier Device Package: 4-TSFP
Part Status: Obsolete
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BFP540E6327BTSA1 BFP540E6327BTSA1 Infineon Technologies fundamentals-of-power-semiconductors Description: RF TRANS NPN 5V 30GHZ PG-SOT-343
Packaging: Tape & Reel (TR)
Package / Case: SC-82A, SOT-343
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 21.5dB
Power - Max: 250mW
Current - Collector (Ic) (Max): 80mA
Voltage - Collector Emitter Breakdown (Max): 5V
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 20mA, 3.5V
Frequency - Transition: 30GHz
Noise Figure (dB Typ @ f): 0.9dB ~ 1.4dB @ 1.8GHz
Supplier Device Package: PG-SOT343-3D
Part Status: Obsolete
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BFP540ESDE6327HTSA1 BFP540ESDE6327HTSA1 Infineon Technologies fundamentals-of-power-semiconductors Description: RF TRANS NPN 5V 30GHZ PG-SOT-343
Packaging: Tape & Reel (TR)
Package / Case: SC-82A, SOT-343
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 21.5dB
Power - Max: 250mW
Current - Collector (Ic) (Max): 80mA
Voltage - Collector Emitter Breakdown (Max): 5V
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 20mA, 3.5V
Frequency - Transition: 30GHz
Noise Figure (dB Typ @ f): 0.9dB ~ 1.4dB @ 1.8GHz
Supplier Device Package: PG-SOT343-3D
Part Status: Obsolete
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IPD60R210CFD7ATMA1 IPD60R210CFD7ATMA1 Infineon Technologies Infineon-IPD60R210CFD7-DataSheet-v02_02-EN.pdf?fileId=5546d46262b31d2e01633a2feadc39b8 Description: MOSFET N CH
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 210mOhm @ 4.9A, 10V
Power Dissipation (Max): 64W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 240µA
Supplier Device Package: TO-252AA (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1015 pF @ 400 V
auf Bestellung 2500 Stücke:
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2500+1.57 EUR
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IPD60R210CFD7ATMA1 IPD60R210CFD7ATMA1 Infineon Technologies Infineon-IPD60R210CFD7-DataSheet-v02_02-EN.pdf?fileId=5546d46262b31d2e01633a2feadc39b8 Description: MOSFET N CH
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 210mOhm @ 4.9A, 10V
Power Dissipation (Max): 64W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 240µA
Supplier Device Package: TO-252AA (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1015 pF @ 400 V
auf Bestellung 2964 Stücke:
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4+4.98 EUR
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100+2.23 EUR
500+1.81 EUR
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IPD60R1K0PFD7SAUMA1 IPD60R1K0PFD7SAUMA1 Infineon Technologies Infineon-IPD60R1K0PFD7S-DataSheet-v02_00-EN.pdf?fileId=5546d4626eab8fbf016ed6256d5839ef Description: CONSUMER PG-TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.7A (Tc)
Rds On (Max) @ Id, Vgs: 1Ohm @ 1A, 10V
Power Dissipation (Max): 26W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 50µA
Supplier Device Package: PG-TO252-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 230 pF @ 400 V
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IPD60R145CFD7ATMA1 IPD60R145CFD7ATMA1 Infineon Technologies Infineon-IPD60R145CFD7-DataSheet-v02_02-EN.pdf?fileId=5546d46262b31d2e01635ebca8052a8d Description: MOSFET N CH
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Rds On (Max) @ Id, Vgs: 145mOhm @ 6.8A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 340µA
Supplier Device Package: TO-252AA (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1330 pF @ 400 V
auf Bestellung 2500 Stücke:
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2500+1.74 EUR
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IPD60R145CFD7ATMA1 IPD60R145CFD7ATMA1 Infineon Technologies Infineon-IPD60R145CFD7-DataSheet-v02_02-EN.pdf?fileId=5546d46262b31d2e01635ebca8052a8d Description: MOSFET N CH
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Rds On (Max) @ Id, Vgs: 145mOhm @ 6.8A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 340µA
Supplier Device Package: TO-252AA (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1330 pF @ 400 V
auf Bestellung 3157 Stücke:
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4+5.37 EUR
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100+2.44 EUR
500+2.12 EUR
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IPB60R199CP Infineon Technologies Description: IPB60R199CP
auf Bestellung 339 Stücke:
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BSP321PL6327 BSP321PL6327 Infineon Technologies INFNS15380-1.pdf?t.download=true&u=5oefqw Description: P-CHANNEL MOSFET
Packaging: Bulk
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 980mA (Tc)
Rds On (Max) @ Id, Vgs: 900mOhm @ 980mA, 10V
Power Dissipation (Max): 1.8W (Ta)
Vgs(th) (Max) @ Id: 4V @ 380µA
Supplier Device Package: PG-SOT223-4-21
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 319 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 36771 Stücke:
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REFDAB11KIZSICSYSTOBO1 REFDAB11KIZSICSYSTOBO1 Infineon Technologies Infineon-UG-2020-31_REF_DAB11KIZSICSYS-UserManual-v01_01-EN.pdf?fileId=5546d46276fb756a0177060f64a829de Description: EVAL BOARD FOR IMBF170R1K0M1
Packaging: Bulk
Voltage - Input: 750V
Regulator Topology: Flyback
Board Type: Fully Populated
Utilized IC / Part: IMBF170R1K0M1, IMZ120R030M1H, XMC4400
Supplied Contents: Board(s)
Main Purpose: DC/DC Converter
Outputs and Type: 1 Isolated Output
Part Status: Active
Power - Output: 11kW
Contents: Board(s)
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FZ1200R17KE3B2NOSA1 Infineon Technologies FZ1200R17KE3_B2_Rev2.1_2013-11-25.pdf Description: IGBT MODULE 1700V 1200A
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BAT54B5003 BAT54B5003 Infineon Technologies INFNS09503-1.pdf?t.download=true&u=5oefqw Description: DIODE SCHOTTKY SOT23
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Supplier Device Package: PG-SOT23
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IRF3717HR Infineon Technologies Description: IRF3717HR
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BC847B-B5003 BC847B-B5003 Infineon Technologies INFNS14907-1.pdf?t.download=true&u=5oefqw Description: TRANS NPN 45V 0.1A PG-SOT23-3-11
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
Frequency - Transition: 250MHz
Supplier Device Package: PG-SOT23-3-11
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 330 mW
auf Bestellung 30000 Stücke:
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KP253XTMA2 KP253XTMA2 Infineon Technologies KP253.pdf Description: IC ANLG BAROMETRIC SNSR DSOF8
Packaging: Tape & Reel (TR)
Applications: Board Mount
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KP253XTMA2 KP253XTMA2 Infineon Technologies KP253.pdf Description: IC ANLG BAROMETRIC SNSR DSOF8
Packaging: Cut Tape (CT)
Applications: Board Mount
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3+8.4 EUR
5+7.55 EUR
10+7.23 EUR
25+6.85 EUR
50+6.6 EUR
100+6.36 EUR
500+5.97 EUR
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EVALICB2FL03GTOBO1 Infineon Technologies Infineon-Lighting_ballast_controller_IC_design_54W_UV_C_disinfection_lamp_ICB2FL03G-ApplicationNotes-v01_01-EN.pdf?fileId=db3a304331c8f8560131d28a549d0675 Description: EVAL KIT
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BGSA143GL10E6327XTSA1 BGSA143GL10E6327XTSA1 Infineon Technologies Infineon-BGSA143GL10-DataSheet-v01_00-EN.pdf?fileId=5546d4626da6c043016dde5887c33cb9 Description: IC RF SWITCH SP4T 6GHZ TSLP10-2
Packaging: Tape & Reel (TR)
Package / Case: 10-XFLGA
Mounting Type: Surface Mount
Circuit: SP4T
RF Type: General Purpose
Operating Temperature: 125°C (TJ)
Voltage - Supply: 1.65V ~ 3.6V
Insertion Loss: 3.2dB (max)
Frequency Range: 400MHz ~ 6GHz
Test Frequency: 5GHz ~ 6GHz
Isolation: 14dB
Supplier Device Package: PG-TSLP-10-2
IIP3: 78dBm
Part Status: Active
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PVAZ172NS-TPBF PVAZ172NS-TPBF Infineon Technologies pvaz172.pdf?fileId=5546d462533600a4015364c42ea329e4 Description: SSR RELAY SPST-NO 1A 0-60V
Packaging: Bulk
Package / Case: 8-SMD (0.300", 7.62mm), 4 Leads
Output Type: AC, DC
Mounting Type: Surface Mount
Voltage - Input: 1.2VDC
Circuit: SPST-NO (1 Form A)
Termination Style: Gull Wing
Load Current: 1 A
Supplier Device Package: 8-SMD
Part Status: Active
Voltage - Load: 0 V ~ 60 V
On-State Resistance (Max): 500 mOhms
Operating Temperature: -40°C ~ 85°C
Approval Agency: UL
auf Bestellung 7440 Stücke:
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33+15.42 EUR
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PVAZ172 PVAZ172 Infineon Technologies pvaz172.pdf?fileId=5546d462533600a4015364c42ea329e4 Description: SSR RELAY SPST-NO 1A 0-60V
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IPP50R520CPXKSA1 IPP50R520CPXKSA1 Infineon Technologies Infineon-IPP50R520CP-DS-v02_00-en.pdf?fileId=db3a30432313ff5e0123854bec2a6712 Description: MOSFET N-CH 500V 7.1A TO220-3
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.1A (Tc)
Rds On (Max) @ Id, Vgs: 520mOhm @ 3.8A, 10V
Power Dissipation (Max): 66W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: PG-TO220-3-1
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 680 pF @ 100 V
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415+1.19 EUR
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IPP50R350CP IPP50R350CP Infineon Technologies INFNS17740-1.pdf?t.download=true&u=5oefqw Description: COOLMOS 10A, 500V N-CHANNEL
auf Bestellung 1500 Stücke:
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376+1.42 EUR
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IPP50R299CPXKSA1 IPP50R299CPXKSA1 Infineon Technologies Infineon-IPP50R299CP-DS-v02_00-en.pdf?folderId=5546d4694909da4801490a07012f053b&fileId=db3a30432313ff5e0123852caf2b65fc Description: MOSFET N-CH 550V 12A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 299mOhm @ 6.6A, 10V
Power Dissipation (Max): 104W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 440µA
Supplier Device Package: PG-TO220-3-1
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 550 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1190 pF @ 100 V
auf Bestellung 16000 Stücke:
Lieferzeit 10-14 Tag (e)
313+1.58 EUR
Mindestbestellmenge: 313
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IPP50N12S3LAKSA1 IPP50N12S3LAKSA1 Infineon Technologies Infineon-IPP_B_I50N12S3L-15-Data-Sheet-02-Infineon-DS-v01_00-EN.pdf?fileId=5546d462584d1d4a0158baf9b3517ffa Description: OPTIMOS POWER-TRANSISTOR
auf Bestellung 500 Stücke:
Lieferzeit 10-14 Tag (e)
500+1.41 EUR
Mindestbestellmenge: 500
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IPP50R399CP IPP50R399CP Infineon Technologies INFNS17023-1.pdf?t.download=true&u=5oefqw Description: IPP50R399 - 500V COOLMOS N-CHANN
Produkt ist nicht verfügbar
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FS50R12KT4B11BOSA1 FS50R12KT4B11BOSA1 Infineon Technologies Infineon-FS50R12KT4_B11-DS-v03_00-en_de.pdf?fileId=db3a30431a47d73d011a49630da90121 Description: IGBT MOD 1200V 50A 280W MOD
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Full Bridge
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 50A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 50 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 280 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 2.8 nF @ 25 V
Produkt ist nicht verfügbar
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BSS606NH6327 BSS606NH6327 Infineon Technologies INFNS26386-1.pdf?t.download=true&u=5oefqw Description: BSS606 - 250V-600V SMALL SIGNAL
auf Bestellung 350865 Stücke:
Lieferzeit 10-14 Tag (e)
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TT320N18SOFHPSA1 TT320N18SOFHPSA1 Infineon Technologies Infineon-TT320N18SOF-DS-v03_01-EN.pdf?fileId=5546d4625cc9456a015d06e572e77eea Description: SCR MODULE 1800V 520A MODULE
Produkt ist nicht verfügbar
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IPG20N04S412AATMA1 IPG20N04S412AATMA1 Infineon Technologies INFNS28023-1.pdf?t.download=true&u=5oefqw Description: MOSFET 2N-CH 40V 20A 8TDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount, Wettable Flank
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 41W
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 20A
Input Capacitance (Ciss) (Max) @ Vds: 1470pF @ 25V
Rds On (Max) @ Id, Vgs: 12.2mOhm @ 17A, 10V
Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 15µA
Supplier Device Package: PG-TDSON-8-10
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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TLE9562QXXUMA1 Infineon-TLE9562QX-DataSheet-v01_00-EN.pdf?fileId=5546d4627883d7e00178ca35c75d3879
TLE9562QXXUMA1
Hersteller: Infineon Technologies
Description: BLDC_DRIVER_IC PG-VQFN-48
Packaging: Cut Tape (CT)
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 250mA
Interface: SPI
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Pre-Driver - Half Bridge (4)
Voltage - Supply: 6V ~ 28V
Technology: NMOS
Voltage - Load: 6V ~ 28V
Supplier Device Package: PG-VQFN-48-31
Motor Type - AC, DC: Brushed DC
Part Status: Active
Grade: Automotive
Qualification: AEC-Q100
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+6.79 EUR
10+5.14 EUR
25+4.72 EUR
100+4.27 EUR
250+4.05 EUR
500+3.92 EUR
1000+3.81 EUR
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TLE95613QXXUMA1 Infineon-TLE9561-3QX-DataSheet-v01_00-EN.pdf?fileId=5546d4627883d7e00178ca359c2e386d
TLE95613QXXUMA1
Hersteller: Infineon Technologies
Description: BLDC_DRIVER_IC PG-VQFN-48
Packaging: Cut Tape (CT)
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 250mA
Interface: SPI
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Pre-Driver - Half Bridge (4)
Voltage - Supply: 6V ~ 28V
Technology: NMOS
Voltage - Load: 6V ~ 28V
Supplier Device Package: PG-VQFN-48-31
Motor Type - AC, DC: Brushed DC
Part Status: Active
Grade: Automotive
Qualification: AEC-Q100
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+6.72 EUR
10+5.08 EUR
25+4.67 EUR
100+4.22 EUR
250+4 EUR
500+3.87 EUR
1000+3.77 EUR
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TLE95623QXXUMA1 Infineon-TLE9562-3QX-DataSheet-v01_00-EN.pdf?fileId=5546d4627883d7e00178ca35b1603873
TLE95623QXXUMA1
Hersteller: Infineon Technologies
Description: BLDC_DRIVER_IC PG-VQFN-48
Packaging: Cut Tape (CT)
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 250mA
Interface: SPI
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Pre-Driver - Half Bridge (4)
Voltage - Supply: 6V ~ 28V
Technology: NMOS
Voltage - Load: 6V ~ 28V
Supplier Device Package: PG-VQFN-48-31
Motor Type - AC, DC: Brushed DC
Part Status: Active
Grade: Automotive
Qualification: AEC-Q100
auf Bestellung 1045 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+6.95 EUR
10+5.27 EUR
25+4.84 EUR
100+4.38 EUR
250+4.16 EUR
500+4.02 EUR
1000+3.91 EUR
Mindestbestellmenge: 3
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IPTC012N08NM5ATMA1 Infineon-IPTC012N08NM5-DataSheet-v02_00-EN.pdf?fileId=5546d46277921c320177a519df392538
IPTC012N08NM5ATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 80V 40A/396A HDSOP
Packaging: Cut Tape (CT)
Package / Case: 16-PowerSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Ta), 396A (Tc)
Rds On (Max) @ Id, Vgs: 1.2mOhm @ 100A, 10V
Power Dissipation (Max): 3.8W (Ta), 375W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 275µA
Supplier Device Package: PG-HDSOP-16-2
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 219 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 16000 pF @ 40 V
auf Bestellung 136 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+14.77 EUR
10+10.1 EUR
100+7.46 EUR
Mindestbestellmenge: 2
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FF225R65T3E3BPSA1 Infineon-FF225R65T3E3-DataSheet-v01_10-EN.pdf?fileId=5546d4627a0b0c7b017a0ea3ac750464
FF225R65T3E3BPSA1
Hersteller: Infineon Technologies
Description: IHV IHM T XHP 3 3-6 5K AG-XHP3K6
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: 2 Independent
Operating Temperature: 125°C (TJ)
Vce(on) (Max) @ Vge, Ic: 3.4V @ 15V, 225A
NTC Thermistor: No
Supplier Device Package: AG-XHP3K65
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 225 A
Voltage - Collector Emitter Breakdown (Max): 5900 V
Power - Max: 1000000 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 65.6 nF @ 25 V
Produkt ist nicht verfügbar
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LEDFRONTHBLBREFTOBO1 Infineon-TLD5099EP-Front_light-SEPIC-UserManual-v01_00-EN.pdf?fileId=5546d46274306ce1017433fa5bd560d9
LEDFRONTHBLBREFTOBO1
Hersteller: Infineon Technologies
Description: DEV KIT
Packaging: Bulk
Function: Clock Generator
Type: Timing
Supplied Contents: Board(s)
Part Status: Active
auf Bestellung 5 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+386.6 EUR
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FS25R12W1T4PBPSA1
Hersteller: Infineon Technologies
Description: IGBT MODULE 1200V 45A 205W EASY
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.25V @ 15V, 25A
NTC Thermistor: Yes
Supplier Device Package: AG-EASY1B-1
IGBT Type: Trench Field Stop
Part Status: Obsolete
Current - Collector (Ic) (Max): 45 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 205 W
Current - Collector Cutoff (Max): 1 mA
Produkt ist nicht verfügbar
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FS75R07N2E4_B11 INFNS28594-1.pdf?t.download=true&u=5oefqw
FS75R07N2E4_B11
Hersteller: Infineon Technologies
Description: FS75R07 - IGBT MODULE
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 75A
NTC Thermistor: Yes
Supplier Device Package: AG-ECONO2B
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Power - Max: 250 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 4.6 nF @ 25 V
Produkt ist nicht verfügbar
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FS75R07N2E4BOSA1 Infineon-FS75R07N2E4-DS-v02_00-en_de.pdf?fileId=db3a30432f5008fe012f52f916333979
Hersteller: Infineon Technologies
Description: IGBT MODULE 650V 75A 250W
Produkt ist nicht verfügbar
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FS75R07N2E4B11BOSA1 Infineon-FS75R07N2E4_B11-DS-v02_00-en_de.pdf?fileId=db3a3043300464130130401d2e50571e
FS75R07N2E4B11BOSA1
Hersteller: Infineon Technologies
Description: IGBT MODULE 650V 75A 250W
Produkt ist nicht verfügbar
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FS75R07N2E4B11BOSA1 Infineon-FS75R07N2E4_B11-DS-v02_00-en_de.pdf?fileId=db3a3043300464130130401d2e50571e
FS75R07N2E4B11BOSA1
Hersteller: Infineon Technologies
Description: FS75R07 - IGBT MODULE
Produkt ist nicht verfügbar
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IPDD60R055CFD7XTMA1 Infineon-IPDD60R055CFD7-DataSheet-v02_00-EN.pdf?fileId=5546d4627506bb3201751c133bde4271
IPDD60R055CFD7XTMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 600V 52A HDSOP-10
Packaging: Tape & Reel (TR)
Package / Case: 10-PowerSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 52A (Tc)
Rds On (Max) @ Id, Vgs: 55mOhm @ 15.1A, 10V
Power Dissipation (Max): 329W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 760µA
Supplier Device Package: PG-HDSOP-10-1
Part Status: Active
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 67 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2724 pF @ 400 V
Produkt ist nicht verfügbar
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IPDD60R055CFD7XTMA1 Infineon-IPDD60R055CFD7-DataSheet-v02_00-EN.pdf?fileId=5546d4627506bb3201751c133bde4271
IPDD60R055CFD7XTMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 600V 52A HDSOP-10
Packaging: Cut Tape (CT)
Package / Case: 10-PowerSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 52A (Tc)
Rds On (Max) @ Id, Vgs: 55mOhm @ 15.1A, 10V
Power Dissipation (Max): 329W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 760µA
Supplier Device Package: PG-HDSOP-10-1
Part Status: Active
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 67 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2724 pF @ 400 V
auf Bestellung 1335 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+11.3 EUR
10+8.01 EUR
100+5.92 EUR
500+5.06 EUR
Mindestbestellmenge: 2
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IPDD60R045CFD7XTMA1 Infineon-IPDD60R045CFD7-DataSheet-v02_00-EN.pdf?fileId=5546d4627506bb3201751c2e742942a8
IPDD60R045CFD7XTMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 600V 61A HDSOP-10
Packaging: Tape & Reel (TR)
Package / Case: 10-PowerSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 61A (Tc)
Rds On (Max) @ Id, Vgs: 45mOhm @ 18A, 10V
Power Dissipation (Max): 379W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 900µA
Supplier Device Package: PG-HDSOP-10-1
Part Status: Active
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 79 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3194 pF @ 400 V
Produkt ist nicht verfügbar
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IPDD60R075CFD7XTMA1 Infineon-IPDD60R075CFD7-DataSheet-v02_00-EN.pdf?fileId=5546d4627506bb3201751c00e6964257
IPDD60R075CFD7XTMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 600V 40A HDSOP-10
Packaging: Tape & Reel (TR)
Package / Case: 10-PowerSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 75mOhm @ 11.4A, 10V
Power Dissipation (Max): 266W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 570µA
Supplier Device Package: PG-HDSOP-10-1
Part Status: Active
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2102 pF @ 400 V
Produkt ist nicht verfügbar
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IPDD60R075CFD7XTMA1 Infineon-IPDD60R075CFD7-DataSheet-v02_00-EN.pdf?fileId=5546d4627506bb3201751c00e6964257
IPDD60R075CFD7XTMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 600V 40A HDSOP-10
Packaging: Cut Tape (CT)
Package / Case: 10-PowerSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 75mOhm @ 11.4A, 10V
Power Dissipation (Max): 266W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 570µA
Supplier Device Package: PG-HDSOP-10-1
Part Status: Active
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2102 pF @ 400 V
auf Bestellung 137 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+9.31 EUR
10+6.25 EUR
100+4.51 EUR
Mindestbestellmenge: 2
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CY7C1387D-167AXC ?utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
CY7C1387D-167AXC
Hersteller: Infineon Technologies
Description: IC SRAM 18MBIT PAR 100TQFP
auf Bestellung 348 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
13+41.88 EUR
Mindestbestellmenge: 13
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IPT60R075CFD7XTMA1 Infineon-IPT60R075CFD7-DataSheet-v02_01-EN.pdf?fileId=5546d46271bf4f920171df2a0edb30e3
IPT60R075CFD7XTMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 600V 33A 8HSOF
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 33A (Tc)
Rds On (Max) @ Id, Vgs: 75mOhm @ 11.4A, 10V
Power Dissipation (Max): 188W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 570µA
Supplier Device Package: PG-HSOF-8-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2103 pF @ 400 V
auf Bestellung 1099 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+9.61 EUR
10+6.76 EUR
100+4.88 EUR
500+4.09 EUR
Mindestbestellmenge: 2
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IPT60R040S7XTMA1 Infineon-IPT60R040S7-DataSheet-v02_01-EN.pdf?fileId=5546d4626bb628d7016bc266ace577b2
IPT60R040S7XTMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 600V 13A 8HSOF
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
Rds On (Max) @ Id, Vgs: 40mOhm @ 13A, 12V
Power Dissipation (Max): 245W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 790µA
Supplier Device Package: PG-HSOF-8-2
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 83 nC @ 12 V
Input Capacitance (Ciss) (Max) @ Vds: 3127 pF @ 300 V
Produkt ist nicht verfügbar
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IPT60R040S7XTMA1 Infineon-IPT60R040S7-DataSheet-v02_01-EN.pdf?fileId=5546d4626bb628d7016bc266ace577b2
IPT60R040S7XTMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 600V 13A 8HSOF
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
Rds On (Max) @ Id, Vgs: 40mOhm @ 13A, 12V
Power Dissipation (Max): 245W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 790µA
Supplier Device Package: PG-HSOF-8-2
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 83 nC @ 12 V
Input Capacitance (Ciss) (Max) @ Vds: 3127 pF @ 300 V
auf Bestellung 1965 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+12.41 EUR
10+8.41 EUR
100+6.16 EUR
500+5.43 EUR
Mindestbestellmenge: 2
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IPT60R045CFD7XTMA1 Infineon-IPT60R045CFD7-DataSheet-v02_01-EN.pdf?fileId=5546d46271bf4f920171df2a61cc30ec
IPT60R045CFD7XTMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 600V 52A 8HSOF
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 52A (Tc)
Rds On (Max) @ Id, Vgs: 45mOhm @ 18A, 10V
Power Dissipation (Max): 270W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 900µA
Supplier Device Package: PG-HSOF-8-2
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 79 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3194 pF @ 400 V
auf Bestellung 3758 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+11.92 EUR
10+8.1 EUR
100+6.21 EUR
Mindestbestellmenge: 2
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IPT60R035CFD7XTMA1 Infineon-IPT60R035CFD7-DataSheet-v02_01-EN.pdf?fileId=5546d46271bf4f920171df2a2c2130e6
IPT60R035CFD7XTMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 600V 67A 8HSOF
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 67A (Tc)
Rds On (Max) @ Id, Vgs: 35mOhm @ 24.9A, 10V
Power Dissipation (Max): 351W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1.25mA
Supplier Device Package: PG-HSOF-8-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 109 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4354 pF @ 400 V
auf Bestellung 1989 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+14.27 EUR
10+9.79 EUR
100+7.88 EUR
Mindestbestellmenge: 2
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IPT60R145CFD7XTMA1 infineon-ipt60r145cfd7-datasheet-en.pdf
IPT60R145CFD7XTMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 600V 19A 8HSOF
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Tc)
Rds On (Max) @ Id, Vgs: 145mOhm @ 6A, 10V
Power Dissipation (Max): 116W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 300µA
Supplier Device Package: PG-HSOF-8-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1199 pF @ 400 V
Produkt ist nicht verfügbar
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IPT60R145CFD7XTMA1 infineon-ipt60r145cfd7-datasheet-en.pdf
IPT60R145CFD7XTMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 600V 19A 8HSOF
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Tc)
Rds On (Max) @ Id, Vgs: 145mOhm @ 6A, 10V
Power Dissipation (Max): 116W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 300µA
Supplier Device Package: PG-HSOF-8-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1199 pF @ 400 V
auf Bestellung 1133 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+5.86 EUR
10+3.86 EUR
100+2.71 EUR
500+2.22 EUR
1000+2.06 EUR
Mindestbestellmenge: 4
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IPT60R105CFD7XTMA1 Infineon-IPT60R105CFD7-DataSheet-v02_01-EN.pdf?fileId=5546d46271bf4f920171df2a7e5530ef
IPT60R105CFD7XTMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 600V 24A 8HSOF
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 105mOhm @ 7.8A, 10V
Power Dissipation (Max): 140W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 390µA
Supplier Device Package: PG-HSOF-8-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1503 pF @ 400 V
Produkt ist nicht verfügbar
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IPT60R105CFD7XTMA1 Infineon-IPT60R105CFD7-DataSheet-v02_01-EN.pdf?fileId=5546d46271bf4f920171df2a7e5530ef
IPT60R105CFD7XTMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 600V 24A 8HSOF
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 105mOhm @ 7.8A, 10V
Power Dissipation (Max): 140W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 390µA
Supplier Device Package: PG-HSOF-8-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1503 pF @ 400 V
auf Bestellung 332 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+6.86 EUR
10+4.54 EUR
100+3.22 EUR
Mindestbestellmenge: 3
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TLS208D1EJV33XUMA1 INFN-S-A0001299229-1.pdf?t.download=true&u=5oefqw
TLS208D1EJV33XUMA1
Hersteller: Infineon Technologies
Description: IC REG LINEAR 3.3V 800MA 8DSO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 800mA
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 170 µA
Voltage - Input (Max): 18V
Number of Regulators: 1
Supplier Device Package: PG-DSO-8
Voltage - Output (Min/Fixed): 3.3V
Control Features: Enable, Reset
Part Status: Active
PSRR: 62dB (10kHz)
Voltage Dropout (Max): 1V @ 800mA
Protection Features: Over Current, Over Temperature, Short Circuit
Current - Supply (Max): 250 µA
Grade: Automotive
Qualification: AEC-Q100
Produkt ist nicht verfügbar
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FF600R07ME4B11BPSA1 Infineon-FF600R07ME4_B11-DS-v03_01-EN.pdf?fileId=db3a304334c41e910134e5a1098f5412
FF600R07ME4B11BPSA1
Hersteller: Infineon Technologies
Description: MEDIUM POWER ECONO
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: 2 Independent
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 600A
NTC Thermistor: Yes
Supplier Device Package: AG-ECONOD-3
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 700 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Power - Max: 1800 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 37 nF @ 25 V
auf Bestellung 1 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+194.8 EUR
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BFP540 INFNS30134-1.pdf?t.download=true&u=5oefqw
BFP540
Hersteller: Infineon Technologies
Description: RF SMALL SIGNAL BIPOLAR TRANSIST
Packaging: Bulk
Part Status: Active
Produkt ist nicht verfügbar
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BFP 540F E6327 BFP%20540F%20E6327.pdf
BFP 540F E6327
Hersteller: Infineon Technologies
Description: RF TRANS NPN 5V 30GHZ 4-TSFP
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, Flat Leads
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 20dB
Power - Max: 250mW
Current - Collector (Ic) (Max): 80mA
Voltage - Collector Emitter Breakdown (Max): 5V
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 20mA, 3.5V
Frequency - Transition: 30GHz
Noise Figure (dB Typ @ f): 0.9dB ~ 1.4dB @ 1.8GHz
Supplier Device Package: 4-TSFP
Part Status: Obsolete
Produkt ist nicht verfügbar
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BFP540FESDE6327 Infineon-BFP540ESD-DS-v02_00-EN.pdf?fileId=5546d462689a790c01690f0382ea3920
BFP540FESDE6327
Hersteller: Infineon Technologies
Description: RF TRANS NPN 5V 30GHZ 4-TSFP
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, Flat Leads
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 20dB
Power - Max: 250mW
Current - Collector (Ic) (Max): 80mA
Voltage - Collector Emitter Breakdown (Max): 5V
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 20mA, 3.5V
Frequency - Transition: 30GHz
Noise Figure (dB Typ @ f): 0.9dB ~ 1.4dB @ 1.8GHz
Supplier Device Package: 4-TSFP
Part Status: Obsolete
Produkt ist nicht verfügbar
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BFP540E6327BTSA1 fundamentals-of-power-semiconductors
BFP540E6327BTSA1
Hersteller: Infineon Technologies
Description: RF TRANS NPN 5V 30GHZ PG-SOT-343
Packaging: Tape & Reel (TR)
Package / Case: SC-82A, SOT-343
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 21.5dB
Power - Max: 250mW
Current - Collector (Ic) (Max): 80mA
Voltage - Collector Emitter Breakdown (Max): 5V
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 20mA, 3.5V
Frequency - Transition: 30GHz
Noise Figure (dB Typ @ f): 0.9dB ~ 1.4dB @ 1.8GHz
Supplier Device Package: PG-SOT343-3D
Part Status: Obsolete
Produkt ist nicht verfügbar
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BFP540ESDE6327HTSA1 fundamentals-of-power-semiconductors
BFP540ESDE6327HTSA1
Hersteller: Infineon Technologies
Description: RF TRANS NPN 5V 30GHZ PG-SOT-343
Packaging: Tape & Reel (TR)
Package / Case: SC-82A, SOT-343
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 21.5dB
Power - Max: 250mW
Current - Collector (Ic) (Max): 80mA
Voltage - Collector Emitter Breakdown (Max): 5V
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 20mA, 3.5V
Frequency - Transition: 30GHz
Noise Figure (dB Typ @ f): 0.9dB ~ 1.4dB @ 1.8GHz
Supplier Device Package: PG-SOT343-3D
Part Status: Obsolete
Produkt ist nicht verfügbar
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IPD60R210CFD7ATMA1 Infineon-IPD60R210CFD7-DataSheet-v02_02-EN.pdf?fileId=5546d46262b31d2e01633a2feadc39b8
IPD60R210CFD7ATMA1
Hersteller: Infineon Technologies
Description: MOSFET N CH
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 210mOhm @ 4.9A, 10V
Power Dissipation (Max): 64W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 240µA
Supplier Device Package: TO-252AA (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1015 pF @ 400 V
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2500+1.57 EUR
Mindestbestellmenge: 2500
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IPD60R210CFD7ATMA1 Infineon-IPD60R210CFD7-DataSheet-v02_02-EN.pdf?fileId=5546d46262b31d2e01633a2feadc39b8
IPD60R210CFD7ATMA1
Hersteller: Infineon Technologies
Description: MOSFET N CH
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 210mOhm @ 4.9A, 10V
Power Dissipation (Max): 64W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 240µA
Supplier Device Package: TO-252AA (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1015 pF @ 400 V
auf Bestellung 2964 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+4.98 EUR
10+3.22 EUR
100+2.23 EUR
500+1.81 EUR
1000+1.67 EUR
Mindestbestellmenge: 4
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IPD60R1K0PFD7SAUMA1 Infineon-IPD60R1K0PFD7S-DataSheet-v02_00-EN.pdf?fileId=5546d4626eab8fbf016ed6256d5839ef
IPD60R1K0PFD7SAUMA1
Hersteller: Infineon Technologies
Description: CONSUMER PG-TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.7A (Tc)
Rds On (Max) @ Id, Vgs: 1Ohm @ 1A, 10V
Power Dissipation (Max): 26W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 50µA
Supplier Device Package: PG-TO252-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 230 pF @ 400 V
Produkt ist nicht verfügbar
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IPD60R145CFD7ATMA1 Infineon-IPD60R145CFD7-DataSheet-v02_02-EN.pdf?fileId=5546d46262b31d2e01635ebca8052a8d
IPD60R145CFD7ATMA1
Hersteller: Infineon Technologies
Description: MOSFET N CH
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Rds On (Max) @ Id, Vgs: 145mOhm @ 6.8A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 340µA
Supplier Device Package: TO-252AA (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1330 pF @ 400 V
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2500+1.74 EUR
Mindestbestellmenge: 2500
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IPD60R145CFD7ATMA1 Infineon-IPD60R145CFD7-DataSheet-v02_02-EN.pdf?fileId=5546d46262b31d2e01635ebca8052a8d
IPD60R145CFD7ATMA1
Hersteller: Infineon Technologies
Description: MOSFET N CH
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Rds On (Max) @ Id, Vgs: 145mOhm @ 6.8A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 340µA
Supplier Device Package: TO-252AA (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1330 pF @ 400 V
auf Bestellung 3157 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+5.37 EUR
10+3.5 EUR
100+2.44 EUR
500+2.12 EUR
Mindestbestellmenge: 4
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IPB60R199CP
Hersteller: Infineon Technologies
Description: IPB60R199CP
auf Bestellung 339 Stücke:
Lieferzeit 10-14 Tag (e)
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BSP321PL6327 INFNS15380-1.pdf?t.download=true&u=5oefqw
BSP321PL6327
Hersteller: Infineon Technologies
Description: P-CHANNEL MOSFET
Packaging: Bulk
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 980mA (Tc)
Rds On (Max) @ Id, Vgs: 900mOhm @ 980mA, 10V
Power Dissipation (Max): 1.8W (Ta)
Vgs(th) (Max) @ Id: 4V @ 380µA
Supplier Device Package: PG-SOT223-4-21
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 319 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 36771 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
787+0.58 EUR
Mindestbestellmenge: 787
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REFDAB11KIZSICSYSTOBO1 Infineon-UG-2020-31_REF_DAB11KIZSICSYS-UserManual-v01_01-EN.pdf?fileId=5546d46276fb756a0177060f64a829de
REFDAB11KIZSICSYSTOBO1
Hersteller: Infineon Technologies
Description: EVAL BOARD FOR IMBF170R1K0M1
Packaging: Bulk
Voltage - Input: 750V
Regulator Topology: Flyback
Board Type: Fully Populated
Utilized IC / Part: IMBF170R1K0M1, IMZ120R030M1H, XMC4400
Supplied Contents: Board(s)
Main Purpose: DC/DC Converter
Outputs and Type: 1 Isolated Output
Part Status: Active
Power - Output: 11kW
Contents: Board(s)
auf Bestellung 11 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+2798.91 EUR
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FZ1200R17KE3B2NOSA1 FZ1200R17KE3_B2_Rev2.1_2013-11-25.pdf
Hersteller: Infineon Technologies
Description: IGBT MODULE 1700V 1200A
Produkt ist nicht verfügbar
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BAT54B5003 INFNS09503-1.pdf?t.download=true&u=5oefqw
BAT54B5003
Hersteller: Infineon Technologies
Description: DIODE SCHOTTKY SOT23
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Supplier Device Package: PG-SOT23
auf Bestellung 30000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
13172+0.033 EUR
Mindestbestellmenge: 13172
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IRF3717HR
Hersteller: Infineon Technologies
Description: IRF3717HR
auf Bestellung 463 Stücke:
Lieferzeit 10-14 Tag (e)
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BC847B-B5003 INFNS14907-1.pdf?t.download=true&u=5oefqw
BC847B-B5003
Hersteller: Infineon Technologies
Description: TRANS NPN 45V 0.1A PG-SOT23-3-11
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
Frequency - Transition: 250MHz
Supplier Device Package: PG-SOT23-3-11
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 330 mW
auf Bestellung 30000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
8955+0.046 EUR
Mindestbestellmenge: 8955
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KP253XTMA2 KP253.pdf
KP253XTMA2
Hersteller: Infineon Technologies
Description: IC ANLG BAROMETRIC SNSR DSOF8
Packaging: Tape & Reel (TR)
Applications: Board Mount
Produkt ist nicht verfügbar
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KP253XTMA2 KP253.pdf
KP253XTMA2
Hersteller: Infineon Technologies
Description: IC ANLG BAROMETRIC SNSR DSOF8
Packaging: Cut Tape (CT)
Applications: Board Mount
auf Bestellung 2035 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+8.4 EUR
5+7.55 EUR
10+7.23 EUR
25+6.85 EUR
50+6.6 EUR
100+6.36 EUR
500+5.97 EUR
Mindestbestellmenge: 3
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EVALICB2FL03GTOBO1 Infineon-Lighting_ballast_controller_IC_design_54W_UV_C_disinfection_lamp_ICB2FL03G-ApplicationNotes-v01_01-EN.pdf?fileId=db3a304331c8f8560131d28a549d0675
Hersteller: Infineon Technologies
Description: EVAL KIT
Produkt ist nicht verfügbar
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BGSA143GL10E6327XTSA1 Infineon-BGSA143GL10-DataSheet-v01_00-EN.pdf?fileId=5546d4626da6c043016dde5887c33cb9
BGSA143GL10E6327XTSA1
Hersteller: Infineon Technologies
Description: IC RF SWITCH SP4T 6GHZ TSLP10-2
Packaging: Tape & Reel (TR)
Package / Case: 10-XFLGA
Mounting Type: Surface Mount
Circuit: SP4T
RF Type: General Purpose
Operating Temperature: 125°C (TJ)
Voltage - Supply: 1.65V ~ 3.6V
Insertion Loss: 3.2dB (max)
Frequency Range: 400MHz ~ 6GHz
Test Frequency: 5GHz ~ 6GHz
Isolation: 14dB
Supplier Device Package: PG-TSLP-10-2
IIP3: 78dBm
Part Status: Active
Produkt ist nicht verfügbar
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PVAZ172NS-TPBF pvaz172.pdf?fileId=5546d462533600a4015364c42ea329e4
PVAZ172NS-TPBF
Hersteller: Infineon Technologies
Description: SSR RELAY SPST-NO 1A 0-60V
Packaging: Bulk
Package / Case: 8-SMD (0.300", 7.62mm), 4 Leads
Output Type: AC, DC
Mounting Type: Surface Mount
Voltage - Input: 1.2VDC
Circuit: SPST-NO (1 Form A)
Termination Style: Gull Wing
Load Current: 1 A
Supplier Device Package: 8-SMD
Part Status: Active
Voltage - Load: 0 V ~ 60 V
On-State Resistance (Max): 500 mOhms
Operating Temperature: -40°C ~ 85°C
Approval Agency: UL
auf Bestellung 7440 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
33+15.42 EUR
Mindestbestellmenge: 33
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PVAZ172 pvaz172.pdf?fileId=5546d462533600a4015364c42ea329e4
PVAZ172
Hersteller: Infineon Technologies
Description: SSR RELAY SPST-NO 1A 0-60V
Produkt ist nicht verfügbar
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IPP50R520CPXKSA1 Infineon-IPP50R520CP-DS-v02_00-en.pdf?fileId=db3a30432313ff5e0123854bec2a6712
IPP50R520CPXKSA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 500V 7.1A TO220-3
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.1A (Tc)
Rds On (Max) @ Id, Vgs: 520mOhm @ 3.8A, 10V
Power Dissipation (Max): 66W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: PG-TO220-3-1
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 680 pF @ 100 V
auf Bestellung 9318 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
415+1.19 EUR
Mindestbestellmenge: 415
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IPP50R350CP INFNS17740-1.pdf?t.download=true&u=5oefqw
IPP50R350CP
Hersteller: Infineon Technologies
Description: COOLMOS 10A, 500V N-CHANNEL
auf Bestellung 1500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
376+1.42 EUR
Mindestbestellmenge: 376
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IPP50R299CPXKSA1 Infineon-IPP50R299CP-DS-v02_00-en.pdf?folderId=5546d4694909da4801490a07012f053b&fileId=db3a30432313ff5e0123852caf2b65fc
IPP50R299CPXKSA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 550V 12A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 299mOhm @ 6.6A, 10V
Power Dissipation (Max): 104W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 440µA
Supplier Device Package: PG-TO220-3-1
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 550 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1190 pF @ 100 V
auf Bestellung 16000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
313+1.58 EUR
Mindestbestellmenge: 313
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IPP50N12S3LAKSA1 Infineon-IPP_B_I50N12S3L-15-Data-Sheet-02-Infineon-DS-v01_00-EN.pdf?fileId=5546d462584d1d4a0158baf9b3517ffa
IPP50N12S3LAKSA1
Hersteller: Infineon Technologies
Description: OPTIMOS POWER-TRANSISTOR
auf Bestellung 500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
500+1.41 EUR
Mindestbestellmenge: 500
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IPP50R399CP INFNS17023-1.pdf?t.download=true&u=5oefqw
IPP50R399CP
Hersteller: Infineon Technologies
Description: IPP50R399 - 500V COOLMOS N-CHANN
Produkt ist nicht verfügbar
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FS50R12KT4B11BOSA1 Infineon-FS50R12KT4_B11-DS-v03_00-en_de.pdf?fileId=db3a30431a47d73d011a49630da90121
FS50R12KT4B11BOSA1
Hersteller: Infineon Technologies
Description: IGBT MOD 1200V 50A 280W MOD
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Full Bridge
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 50A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 50 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 280 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 2.8 nF @ 25 V
Produkt ist nicht verfügbar
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BSS606NH6327 INFNS26386-1.pdf?t.download=true&u=5oefqw
BSS606NH6327
Hersteller: Infineon Technologies
Description: BSS606 - 250V-600V SMALL SIGNAL
auf Bestellung 350865 Stücke:
Lieferzeit 10-14 Tag (e)
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TT320N18SOFHPSA1 Infineon-TT320N18SOF-DS-v03_01-EN.pdf?fileId=5546d4625cc9456a015d06e572e77eea
TT320N18SOFHPSA1
Hersteller: Infineon Technologies
Description: SCR MODULE 1800V 520A MODULE
Produkt ist nicht verfügbar
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IPG20N04S412AATMA1 INFNS28023-1.pdf?t.download=true&u=5oefqw
IPG20N04S412AATMA1
Hersteller: Infineon Technologies
Description: MOSFET 2N-CH 40V 20A 8TDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount, Wettable Flank
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 41W
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 20A
Input Capacitance (Ciss) (Max) @ Vds: 1470pF @ 25V
Rds On (Max) @ Id, Vgs: 12.2mOhm @ 17A, 10V
Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 15µA
Supplier Device Package: PG-TDSON-8-10
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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