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BGS12SL6E6327 Infineon Technologies INFNS28176-1.pdf?t.download=true&u=5oefqw Description: GENERAL PURPOSE SWITCH SPDT
Part Status: Active
IIP3: 65dBm
Supplier Device Package: TSLP-6-4
Frequency Range: 100MHz ~ 6GHz
RF Type: GSM, LTE, WCDMA
Circuit: SPDT
Impedance: 50Ohm
Package / Case: 6-XFDFN
Packaging: Bulk
auf Bestellung 4207 Stücke:
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2251+0.25 EUR
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BGS12AL7-4E6327 Infineon Technologies INFNS13340-1.pdf?t.download=true&u=5oefqw Description: RF SWITCH
Part Status: Active
Supplier Device Package: PG-TSLP-7-4
Isolation: 20dB
Test Frequency: 2GHz
Frequency Range: 30MHz ~ 3GHz
Insertion Loss: 0.5dB
Voltage - Supply: 2.4V ~ 3.6V
Operating Temperature: -30°C ~ 85°C
RF Type: General Purpose
Circuit: SPDT
Mounting Type: Surface Mount
Impedance: 50Ohm
Package / Case: 6-XDFN Exposed Pad
Packaging: Bulk
auf Bestellung 39074 Stücke:
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1731+0.36 EUR
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IPTG111N20NM3FDATMA1 IPTG111N20NM3FDATMA1 Infineon Technologies Infineon-IPTG111N20NM3FD-DataSheet-v02_00-EN.pdf?fileId=5546d46277921c320177aa5221467dea Description: TRENCH >=100V PG-HSOG-8
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSMD, Gull Wing
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10.8A (Ta), 108A (Tc)
Rds On (Max) @ Id, Vgs: 11.1mOhm @ 96A, 10V
Power Dissipation (Max): 3.8W (Ta), 375W (Tc)
Vgs(th) (Max) @ Id: 4V @ 267µA
Supplier Device Package: PG-HSOG-8-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 81 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7000 pF @ 100 V
Produkt ist nicht verfügbar
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IPTG111N20NM3FDATMA1 IPTG111N20NM3FDATMA1 Infineon Technologies Infineon-IPTG111N20NM3FD-DataSheet-v02_00-EN.pdf?fileId=5546d46277921c320177aa5221467dea Description: TRENCH >=100V PG-HSOG-8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSMD, Gull Wing
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10.8A (Ta), 108A (Tc)
Rds On (Max) @ Id, Vgs: 11.1mOhm @ 96A, 10V
Power Dissipation (Max): 3.8W (Ta), 375W (Tc)
Vgs(th) (Max) @ Id: 4V @ 267µA
Supplier Device Package: PG-HSOG-8-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 81 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7000 pF @ 100 V
auf Bestellung 1726 Stücke:
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2+15.16 EUR
10+10.29 EUR
100+7.54 EUR
500+6.64 EUR
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IPTG210N25NM3FDATMA1 IPTG210N25NM3FDATMA1 Infineon Technologies Infineon-IPTG210N25NM3FD-DataSheet-v02_00-EN.pdf?fileId=5546d46277921c320177aa52f0487dfb Description: TRENCH >=100V PG-HSOG-8
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSMD, Gull Wing
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.7A (Ta), 77A (Tc)
Rds On (Max) @ Id, Vgs: 21mOhm @ 69A, 10V
Power Dissipation (Max): 3.8W (Ta), 375W (Tc)
Vgs(th) (Max) @ Id: 4V @ 267µA
Supplier Device Package: PG-HSOG-8-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 81 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7000 pF @ 125 V
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1800+9.16 EUR
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ISC028N04NM5ATMA1 ISC028N04NM5ATMA1 Infineon Technologies Infineon-ISC028N04NM5-DataSheet-v02_01-EN.pdf?fileId=5546d46271104011017110e46db8000a Description: 40V 2.8M OPTIMOS MOSFET SUPERSO8
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 121A (Tc)
Rds On (Max) @ Id, Vgs: 2.8mOhm @ 50A, 10V
Power Dissipation (Max): 3W (Ta), 75W (Tc)
Vgs(th) (Max) @ Id: 3.4V @ 30µA
Supplier Device Package: PG-TDSON-8 FL
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2700 pF @ 20 V
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5000+0.73 EUR
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ISC028N04NM5ATMA1 ISC028N04NM5ATMA1 Infineon Technologies Infineon-ISC028N04NM5-DataSheet-v02_01-EN.pdf?fileId=5546d46271104011017110e46db8000a Description: 40V 2.8M OPTIMOS MOSFET SUPERSO8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 121A (Tc)
Rds On (Max) @ Id, Vgs: 2.8mOhm @ 50A, 10V
Power Dissipation (Max): 3W (Ta), 75W (Tc)
Vgs(th) (Max) @ Id: 3.4V @ 30µA
Supplier Device Package: PG-TDSON-8 FL
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2700 pF @ 20 V
auf Bestellung 6152 Stücke:
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8+2.92 EUR
12+1.83 EUR
100+1.21 EUR
500+0.95 EUR
1000+0.87 EUR
2000+0.8 EUR
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PX8143HDMG018XTMA1 Infineon Technologies Description: LED PX8143HDMG018XTMA1
Packaging: Tray
Part Status: Obsolete
Produkt ist nicht verfügbar
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KITAURIXTC224TFTTOBO1 KITAURIXTC224TFTTOBO1 Infineon Technologies Infineon-KIT_AURIX_TC224_TFT-UserManual-v01_00-EN.pdf?fileId=5546d4626c1f3dc3016c85c5843a7f4c Description: EVAL TC224 TFT AURIX
Platform: AURIX
Utilized IC / Part: TC224
Core Processor: TriCore™
Contents: Board(s), LCD
Type: MCU 32-Bit
Mounting Type: Fixed
Packaging: Box
auf Bestellung 1 Stücke:
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1+498.28 EUR
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KITAURIXTC265TFTTOBO1 KITAURIXTC265TFTTOBO1 Infineon Technologies Infineon-KIT_AURIX_TC2x5_TFT-UserManual-v02_00-EN.pdf?fileId=5546d4626c1f3dc3016c860ebecf0149 Description: AURIX APPLICATION KIT TC265 TFT
Platform: AURIX
Utilized IC / Part: TC265
Core Processor: TriCore™
Contents: Board(s), LCD
Type: MCU 32-Bit
Mounting Type: Fixed
Packaging: Box
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1+537.24 EUR
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DHP0070N10N5AUMA1 Infineon Technologies Description: IC GATE DRVR
Packaging: Tape & Reel (TR)
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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EVALHBPARALLELGANTOBO1 EVALHBPARALLELGANTOBO1 Infineon Technologies Infineon-Evaluationboard_EVAL_HB_ParallelGaN-ApplicationNotes-v01_00-EN.pdf?fileId=5546d462712ef9b701717861cc8a11c4 Description: EVAL_HB_PARALLELGAN
Contents: Board(s)
Outputs and Type: 1 Non-Isolated Output
Main Purpose: AC/DC, Non-Isolated
Supplied Contents: Board(s)
Board Type: Fully Populated
Regulator Topology: Buck-Boost
Current - Output: 24A
Packaging: Bulk
auf Bestellung 28 Stücke:
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1+274.2 EUR
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IPC60R037P7X7SA1 Infineon Technologies Description: MOSFET N-CH HI POWER WAFER
Produkt ist nicht verfügbar
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PMB8753AV2.04 Infineon Technologies Description: INFINEON PMB8753AV TELECOM IC -
Packaging: Bulk
auf Bestellung 15000 Stücke:
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52+10.29 EUR
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PMB8787V2.0 Infineon Technologies PMB8787.pdf?t.download=true&u=ovmfp3 Description: PMB8787V2.0 TELECOM IC
Packaging: Bulk
auf Bestellung 200 Stücke:
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47+11.55 EUR
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PEB2261NV2.0G Infineon Technologies Description: SICOFI 2 DUAL CH CODEC FILTER
auf Bestellung 2000 Stücke:
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 Mindestbestellmenge: 21 Stücke
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PEF2261NGV2.0 Infineon Technologies Description: SICOFI 2 DUAL CH CODEC FILTER
Packaging: Bulk
auf Bestellung 8000 Stücke:
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21+29.02 EUR
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PEB2261NV2.0 Infineon Technologies Description: SICOFI 2 DUAL CHANNEL CODEC FILT
auf Bestellung 1091 Stücke:
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PEF2261NWDGV2.0 Infineon Technologies Description: SICOFI 2 DUAL CH CODEC FILTER
Packaging: Bulk
auf Bestellung 3000 Stücke:
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19+32.07 EUR
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PEF2261NV2.0 Infineon Technologies Description: SICOFI 2 DUAL CHANNEL CODEC FILT
Packaging: Bulk
auf Bestellung 27371 Stücke:
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19+32.24 EUR
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IAUC60N06S5N074ATMA1 IAUC60N06S5N074ATMA1 Infineon Technologies Infineon-IAUC60N06S5N074-DataSheet-v01_00-EN.pdf?fileId=5546d4627a0b0c7b017a1eb505e56fee Description: MOSFET_)40V 60V) PG-TDSON-8
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tj)
Rds On (Max) @ Id, Vgs: 7.4mOhm @ 30A, 10V
Power Dissipation (Max): 52W (Tc)
Vgs(th) (Max) @ Id: 3.4V @ 19µA
Supplier Device Package: PG-TDSON-8-33
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1461 pF @ 30 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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IAUC60N06S5L073ATMA1 IAUC60N06S5L073ATMA1 Infineon Technologies Infineon-IAUC60N06S5L073-DataSheet-v01_01-EN.pdf?fileId=5546d4627a0b0c7b017a1eb4f9c26feb Description: MOSFET_)40V 60V) PG-TDSON-8
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tj)
Rds On (Max) @ Id, Vgs: 7.3mOhm @ 30A, 10V
Power Dissipation (Max): 52W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 19µA
Supplier Device Package: PG-TDSON-8-33
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 22.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1655 pF @ 30 V
Qualification: AEC-Q101
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5000+0.75 EUR
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IPDQ60R075CFD7XTMA1 IPDQ60R075CFD7XTMA1 Infineon Technologies Infineon-IPDQ60R075CFD7-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c8412f8d3018465868a09094e Description: HIGH POWER_NEW PG-HDSOP-22
Packaging: Tape & Reel (TR)
Package / Case: 22-PowerBSOP Module
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
Supplier Device Package: PG-HDSOP-22-1
Part Status: Active
Drain to Source Voltage (Vdss): 600 V
auf Bestellung 750 Stücke:
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750+5.27 EUR
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IPDQ60R055CFD7XTMA1 IPDQ60R055CFD7XTMA1 Infineon Technologies Infineon-IPDQ60R055CFD7-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c8412f8d3018465a43edc09a9 Description: HIGH POWER_NEW PG-HDSOP-22
Packaging: Tape & Reel (TR)
Package / Case: 22-PowerBSOP Module
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
Supplier Device Package: PG-HDSOP-22-1
Part Status: Active
Drain to Source Voltage (Vdss): 600 V
Produkt ist nicht verfügbar
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IPDQ60R045CFD7XTMA1 IPDQ60R045CFD7XTMA1 Infineon Technologies Infineon-IPDQ60R045CFD7-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c8412f8d3018465c80ad309dd Description: HIGH POWER_NEW PG-HDSOP-22
Packaging: Tape & Reel (TR)
Package / Case: 22-PowerBSOP Module
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
Supplier Device Package: PG-HDSOP-22-1
Part Status: Active
Drain to Source Voltage (Vdss): 600 V
auf Bestellung 750 Stücke:
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750+7.66 EUR
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IPDQ60R035CFD7XTMA1 IPDQ60R035CFD7XTMA1 Infineon Technologies Infineon-IPDQ60R035CFD7-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c8412f8d30184656b09ef091c Description: HIGH POWER_NEW PG-HDSOP-22
Packaging: Tape & Reel (TR)
Package / Case: 22-PowerBSOP Module
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
Supplier Device Package: PG-HDSOP-22-1
Part Status: Active
Drain to Source Voltage (Vdss): 600 V
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750+10.94 EUR
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IPDQ60R022S7XTMA1 IPDQ60R022S7XTMA1 Infineon Technologies Infineon-IPDQ60R022S7-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c7e7124d1017f06a8ffdb1518 Description: HIGH POWER_NEW PG-HDSOP-22
Packaging: Tape & Reel (TR)
Package / Case: 22-PowerBSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 22mOhm @ 23A, 12V
Power Dissipation (Max): 416W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1.44mA
Supplier Device Package: PG-HDSOP-22-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 12 V
Input Capacitance (Ciss) (Max) @ Vds: 5639 pF @ 300 V
Produkt ist nicht verfügbar
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IPP050N10NF2SAKMA1 IPP050N10NF2SAKMA1 Infineon Technologies Infineon-IPP050N10NF2S-DataSheet-v02_00-EN.pdf?fileId=5546d46276fa42a30176fa66f3a90008 Description: TRENCH >=100V
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19.4A (Ta), 110A (Tc)
Rds On (Max) @ Id, Vgs: 5mOhm @ 60A, 10V
Power Dissipation (Max): 3.8W (Ta), 150W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 84µA
Supplier Device Package: PG-TO220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 76 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3600 pF @ 50 V
auf Bestellung 536 Stücke:
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4+5.97 EUR
10+3.88 EUR
50+2.98 EUR
100+2.68 EUR
500+2.17 EUR
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DHP1050N10N5AUMA1 DHP1050N10N5AUMA1 Infineon Technologies Infineon-DHPX050N10N5_Datasheet-DataSheet-v01_00-EN.pdf?fileId=5546d4627aa5d4f5017b2bf3e3db0174 Description: INT. POWERSTAGE/DRIVER, PG-IQFN-
Packaging: Tape & Reel (TR)
Package / Case: 36-PowerVFQFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 8V ~ 17V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 90 V
Supplier Device Package: PG-IQFN-36-1
Channel Type: Single
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: N-Channel MOSFET
Current - Peak Output (Source, Sink): 4A, 4A
Part Status: Active
Produkt ist nicht verfügbar
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DHP1050N10N5AUMA1 DHP1050N10N5AUMA1 Infineon Technologies Infineon-DHPX050N10N5_Datasheet-DataSheet-v01_00-EN.pdf?fileId=5546d4627aa5d4f5017b2bf3e3db0174 Description: INT. POWERSTAGE/DRIVER, PG-IQFN-
Packaging: Cut Tape (CT)
Package / Case: 36-PowerVFQFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 8V ~ 17V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 90 V
Supplier Device Package: PG-IQFN-36-1
Channel Type: Single
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: N-Channel MOSFET
Current - Peak Output (Source, Sink): 4A, 4A
Part Status: Active
Produkt ist nicht verfügbar
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DHP0050N10N5AUMA1 Infineon Technologies Infineon-DHPX050N10N5_Datasheet-DataSheet-v01_00-EN.pdf?fileId=5546d4627aa5d4f5017b2bf3e3db0174 Description: INT. POWERSTAGE/DRIVER PG-IQFN-3
Packaging: Tape & Reel (TR)
Package / Case: 36-PowerVFQFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 8V ~ 17V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 90 V
Supplier Device Package: PG-IQFN-36-1
Channel Type: Single
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: N-Channel MOSFET
Current - Peak Output (Source, Sink): 4A, 6A
Part Status: Not For New Designs
Produkt ist nicht verfügbar
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IPU60R1K4C6 IPU60R1K4C6 Infineon Technologies INFNS17573-1.pdf?t.download=true&u=5oefqw Description: N-CHANNEL POWER MOSFET
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Packaging: Bulk
Input Capacitance (Ciss) (Max) @ Vds: 200 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 9.4 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PG-TO-251-3-341
Vgs(th) (Max) @ Id: 3.5V @ 90µA
Power Dissipation (Max): 28.4W (Tc)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 1.1A, 10V
Current - Continuous Drain (Id) @ 25°C: 3.2A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
auf Bestellung 2370 Stücke:
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IPDD60R145CFD7XTMA1 IPDD60R145CFD7XTMA1 Infineon Technologies Infineon-IPDD60R145CFD7-DataSheet-v02_00-EN.pdf?fileId=5546d4627506bb3201751c2ea92342b7 Description: MOSFET N-CH 600V 24A HDSOP-10
Rds On (Max) @ Id, Vgs: 145mOhm @ 6A, 10V
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 10-PowerSOP Module
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 1199 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Part Status: Active
Supplier Device Package: PG-HDSOP-10-1
Vgs(th) (Max) @ Id: 4.5V @ 300µA
Power Dissipation (Max): 160W (Tc)
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DDB2U60N12W1RFB11BPSA1 DDB2U60N12W1RFB11BPSA1 Infineon Technologies Infineon-DDB2U60N12W1RF_B11-DataSheet-v02_21-EN.pdf?fileId=5546d4627956d53f0179796012a65183 Description: BRIDGE RECT 1P 1.2KV 60A EASY1B1
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Diode Type: Single Phase
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Silicon Carbide Schottky
Supplier Device Package: AG-EASY1B-1
Part Status: Active
Voltage - Peak Reverse (Max): 1.2 kV
Current - Average Rectified (Io): 60 A
Voltage - Forward (Vf) (Max) @ If: 1.85 V @ 60 A
Current - Reverse Leakage @ Vr: 174 µA @ 1200 V
Produkt ist nicht verfügbar
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ISP14EP15LMXTSA1 ISP14EP15LMXTSA1 Infineon Technologies Infineon-ISP14EP15LM-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c7bb971ed017bdf12458d1c4b Description: SMALL SIGNAL MOSFETS PG-SOT223-4
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 770mA (Ta), 1.29A (Tc)
Rds On (Max) @ Id, Vgs: 1.38Ohm @ 800mA, 10V
Power Dissipation (Max): 1.8W (Ta), 5W (Tc)
Vgs(th) (Max) @ Id: 2V @ 270µA
Supplier Device Package: PG-SOT223-4
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 11.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 530 pF @ 75 V
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2000+0.32 EUR
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ISP14EP15LMXTSA1 ISP14EP15LMXTSA1 Infineon Technologies Infineon-ISP14EP15LM-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c7bb971ed017bdf12458d1c4b Description: SMALL SIGNAL MOSFETS PG-SOT223-4
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 770mA (Ta), 1.29A (Tc)
Rds On (Max) @ Id, Vgs: 1.38Ohm @ 800mA, 10V
Power Dissipation (Max): 1.8W (Ta), 5W (Tc)
Vgs(th) (Max) @ Id: 2V @ 270µA
Supplier Device Package: PG-SOT223-4
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 11.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 530 pF @ 75 V
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28+0.75 EUR
41+0.51 EUR
46+0.46 EUR
100+0.39 EUR
250+0.37 EUR
500+0.35 EUR
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IPB100N06S2L05ATMA2 IPB100N06S2L05ATMA2 Infineon Technologies Infineon-IPP_B100N06S2L_05-DS-v01_00-en%5B1%5D.pdf?fileId=db3a304412b407950112b43227e5573c&ack=t Description: MOSFET N-CH 55V 100A TO263-3
Input Capacitance (Ciss) (Max) @ Vds: 5660 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 230 nC @ 10 V
Drain to Source Voltage (Vdss): 55 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: PG-TO263-3-2
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 300W (Tc)
Rds On (Max) @ Id, Vgs: 4.4mOhm @ 80A, 10V
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
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IDK03G65C5XTMA2 IDK03G65C5XTMA2 Infineon Technologies Infineon-IDK03G65C5-DS-v02_00-en.pdf?fileId=db3a304342e8be2c0142eb7618470089 Description: DIODE SIL CARB 650V 3A PGTO2632
Current - Reverse Leakage @ Vr: 500 µA @ 650 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 3 A
Voltage - DC Reverse (Vr) (Max): 650 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: PG-TO263-2
Current - Average Rectified (Io): 3A
Capacitance @ Vr, F: 100pF @ 1V, 1MHz
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Bulk
auf Bestellung 14000 Stücke:
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347+1.73 EUR
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SLS32AIA010MLUSON10XTMA2 SLS32AIA010MLUSON10XTMA2 Infineon Technologies Infineon-OPTIGA%20TRUST%20M%20SLS32AIA-DataSheet-v03_00-EN.pdf?fileId=5546d4626c1f3dc3016c853c271a7e4a Description: OPTIGA TRUST M V3 HIGH TEMP
DigiKey Programmable: Not Verified
Part Status: Active
Supplier Device Package: PG-USON-10-2
Core Processor: 16-Bit
Applications: Security
Program Memory Type: NVM (10kB)
Voltage - Supply: 1.62V ~ 5.5V
Operating Temperature: -40°C ~ 105°C (TA)
Interface: I2C
Mounting Type: Surface Mount
Package / Case: 10-UFDFN Exposed Pad
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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SLS32AIA010MLUSON10XTMA2 SLS32AIA010MLUSON10XTMA2 Infineon Technologies Infineon-OPTIGA%20TRUST%20M%20SLS32AIA-DataSheet-v03_00-EN.pdf?fileId=5546d4626c1f3dc3016c853c271a7e4a Description: OPTIGA TRUST M V3 HIGH TEMP
DigiKey Programmable: Not Verified
Part Status: Active
Supplier Device Package: PG-USON-10-2
Core Processor: 16-Bit
Applications: Security
Program Memory Type: NVM (10kB)
Voltage - Supply: 1.62V ~ 5.5V
Operating Temperature: -40°C ~ 105°C (TA)
Interface: I2C
Mounting Type: Surface Mount
Package / Case: 10-UFDFN Exposed Pad
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
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BTS244ZE3062AATMA2 BTS244ZE3062AATMA2 Infineon Technologies INFNS27930-1.pdf?t.download=true&u=5oefqw Description: MOSFET N-CH 55V 35A TO263-5
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 2660 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
Drain to Source Voltage (Vdss): 55 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Not For New Designs
Supplier Device Package: PG-TO263-5-2
Vgs(th) (Max) @ Id: 2V @ 130µA
Power Dissipation (Max): 170W (Tc)
FET Feature: Temperature Sensing Diode
Rds On (Max) @ Id, Vgs: 13mOhm @ 19A, 10V
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-5, D2PAK (4 Leads + Tab), TO-263BB
Packaging: Tape & Reel (TR)
Grade: Automotive
Produkt ist nicht verfügbar
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BTS244ZE3062AATMA2 BTS244ZE3062AATMA2 Infineon Technologies INFNS27930-1.pdf?t.download=true&u=5oefqw Description: MOSFET N-CH 55V 35A TO263-5
Qualification: AEC-Q101
Grade: Automotive
FET Feature: Temperature Sensing Diode
Rds On (Max) @ Id, Vgs: 13mOhm @ 19A, 10V
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-5, D2PAK (4 Leads + Tab), TO-263BB
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 2660 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
Drain to Source Voltage (Vdss): 55 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Not For New Designs
Supplier Device Package: PG-TO263-5-2
Vgs(th) (Max) @ Id: 2V @ 130µA
Power Dissipation (Max): 170W (Tc)
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IPB80N06S4L05ATMA2 Infineon Technologies Infineon-I80N06S4L_05-DS-v01_00-en.pdf?fileId=db3a30431ff98815012038e65fed0d07 Description: MOSFET_)40V,60V)
Input Capacitance (Ciss) (Max) @ Vds: 8180 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±16V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PG-TO263-3-2
Vgs(th) (Max) @ Id: 2.2V @ 60µA
Power Dissipation (Max): 107W (Tc)
Rds On (Max) @ Id, Vgs: 5.1mOhm @ 80A, 10V
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Bulk
Produkt ist nicht verfügbar
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IPB80P04P4L06ATMA2 IPB80P04P4L06ATMA2 Infineon Technologies Infineon-IPP_B_I80P04P4L-DataSheet-v01_01-EN.pdf?fileId=db3a30432f69f146012f782f18402e14 Description: MOSFET P-CH 40V 80A TO263-3
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 6.7mOhm @ 80A, 10V
Power Dissipation (Max): 88W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 150µA
Supplier Device Package: PG-TO263-3-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +5V, -16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 104 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6580 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 1000 Stücke:
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1000+1.58 EUR
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IPB80P04P4L06ATMA2 IPB80P04P4L06ATMA2 Infineon Technologies Infineon-IPP_B_I80P04P4L-DataSheet-v01_01-EN.pdf?fileId=db3a30432f69f146012f782f18402e14 Description: MOSFET P-CH 40V 80A TO263-3
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 6.7mOhm @ 80A, 10V
Power Dissipation (Max): 88W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 150µA
Supplier Device Package: PG-TO263-3-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +5V, -16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 104 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6580 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 2396 Stücke:
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10+3.09 EUR
100+2.13 EUR
500+1.73 EUR
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IPP80P03P4L04AKSA2 IPP80P03P4L04AKSA2 Infineon Technologies Infineon-I80P03P4L_04-DataSheet-v01_01-EN.pdf?fileId=db3a30431ddc9372011e07e95eb827d7 Description: MOSFET P-CH 30V 80A TO220-3
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): +5V, -16V
Supplier Device Package: PG-TO220-3-1
Vgs(th) (Max) @ Id: 2V @ 253µA
Power Dissipation (Max): 137W (Tc)
Rds On (Max) @ Id, Vgs: 4.4mOhm @ 80A, 10V
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 11300 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 160 nC @ 10 V
auf Bestellung 451 Stücke:
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4+6.33 EUR
50+3.27 EUR
100+3.01 EUR
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FS25R12W1T7BOMA1 FS25R12W1T7BOMA1 Infineon Technologies Infineon-FS25R12W1T7-DataSheet-v02_00-EN.pdf?fileId=5546d46270c4f93e0170f188efca7334 Description: LOW POWER EASY AG-EASY1B-1
Input Capacitance (Cies) @ Vce: 4.77 nF @ 25 V
Current - Collector Cutoff (Max): 5.6 µA
Power - Max: 20 mW
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 25 A
Part Status: Active
IGBT Type: Trench Field Stop
Supplier Device Package: AG-EASY1B
NTC Thermistor: Yes
Operating Temperature: -40°C ~ 175°C (TJ)
Configuration: Three Phase Inverter
Input: Standard
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Tray
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FS25R12W1T7PB11BPSA1 FS25R12W1T7PB11BPSA1 Infineon Technologies Infineon-FS25R12W1T7P_B11-DataSheet-v02_00-EN.pdf?fileId=5546d46273a5366f0173e165e5d65778 Description: LOW POWER EASY AG-EASY1B-2
Input Capacitance (Cies) @ Vce: 4.77 nF @ 25 V
Current - Collector Cutoff (Max): 5.6 µA
Power - Max: 20 mW
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 25 A
Part Status: Active
IGBT Type: Trench Field Stop
Supplier Device Package: Module
NTC Thermistor: Yes
Operating Temperature: -40°C ~ 175°C (TJ)
Configuration: Three Phase Inverter
Input: Standard
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Tray
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FP25R12W1T7B3BPSA1 FP25R12W1T7B3BPSA1 Infineon Technologies Infineon-FP25R12W1T7-DataSheet-v00_10-EN.pdf?fileId=5546d46273a5366f017426870cd665c4 Description: IGBT MODULE 1200V 25A AG-EASY1B
Supplier Device Package: AG-EASY1B
NTC Thermistor: Yes
Operating Temperature: -40°C ~ 175°C (TJ)
Configuration: Three Phase Inverter
Input: Three Phase Bridge Rectifier
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Tray
Input Capacitance (Cies) @ Vce: 4.77 nF @ 25 V
Current - Collector Cutoff (Max): 5.6 µA
Power - Max: 20 mW
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 25 A
Part Status: Active
IGBT Type: Trench Field Stop
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FP25R12W1T7BOMA1 FP25R12W1T7BOMA1 Infineon Technologies Infineon-FP25R12W1T7-DataSheet-v00_10-EN.pdf?fileId=5546d46273a5366f017426870cd665c4 Description: IGBT MODULE 1200V 25A AG-EASY1B
Package / Case: Module
Packaging: Tray
Input Capacitance (Cies) @ Vce: 4.77 nF @ 25 V
Current - Collector Cutoff (Max): 5.6 µA
Power - Max: 20 mW
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 25 A
Part Status: Active
IGBT Type: Trench Field Stop
Supplier Device Package: AG-EASY1B
NTC Thermistor: Yes
Operating Temperature: -40°C ~ 175°C (TJ)
Configuration: Three Phase Inverter
Input: Three Phase Bridge Rectifier
Mounting Type: Chassis Mount
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FP25R12W2T7BPSA1 FP25R12W2T7BPSA1 Infineon Technologies Infineon-FP25R12W2T7-DataSheet-v02_00-EN.pdf?fileId=5546d46273a5366f01742692f69465ca Description: IGBT MODULE 1200V 25A AG-EASY2B
Input Capacitance (Cies) @ Vce: 4.77 nF @ 25 V
Current - Collector Cutoff (Max): 5.6 µA
Power - Max: 20 mW
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 25 A
Part Status: Active
IGBT Type: Trench Field Stop
Supplier Device Package: AG-EASY2B
NTC Thermistor: Yes
Operating Temperature: -40°C ~ 175°C (TJ)
Configuration: Three Phase Inverter
Input: Three Phase Bridge Rectifier
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Tray
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1+80.78 EUR
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FP25R12W1T7PBPSA1 FP25R12W1T7PBPSA1 Infineon Technologies Infineon-FP25R12W1T7-DataSheet-v00_10-EN.pdf?fileId=5546d46273a5366f017426870cd665c4 Description: IGBT MODULE 1200V 25A AG-EASY1B
Input Capacitance (Cies) @ Vce: 4.77 nF @ 25 V
Current - Collector Cutoff (Max): 5.6 µA
Power - Max: 20 mW
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 25 A
Part Status: Active
IGBT Type: Trench Field Stop
Supplier Device Package: AG-EASY1B
NTC Thermistor: Yes
Operating Temperature: -40°C ~ 175°C (TJ)
Configuration: Three Phase Inverter
Input: Three Phase Bridge Rectifier
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Tray
auf Bestellung 10 Stücke:
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1+82.62 EUR
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F475R07W2H3B51BPSA1 Infineon Technologies Infineon-F4-75R07W2H3_B51-DS-v02_00-EN.pdf?fileId=5546d4624933b87501497522b7240cf9 Description: IGBT MODULE 650V 75A 250W MODULE
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.55V @ 15V, 37.5A
NTC Thermistor: Yes
Supplier Device Package: Module
Part Status: Obsolete
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Power - Max: 250 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 4.7 nF @ 25 V
Produkt ist nicht verfügbar
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1SD418F2FZ1200R33KNPSA1 Infineon Technologies Description: MODULE GATE DRIVER
Packaging: Tray
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XC2336B40F20LAAKXUMA1 XC2336B40F20LAAKXUMA1 Infineon Technologies XC2336B.pdf Description: IC MCU 16/32B 320KB FLASH 64LQFP
auf Bestellung 1900 Stücke:
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XC2336B40F80LAAKXUMA1 XC2336B40F80LAAKXUMA1 Infineon Technologies XC2336B.pdf Description: IC MCU 16/32B 320KB FLASH 64LQFP
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PMB2411FV1.1 Infineon Technologies Description: DUAL BAND RECIEVER
Packaging: Bulk
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103+5.39 EUR
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PMB7860V1.1E-GICM Infineon Technologies PMB7860.pdf?t.download=true&u=ovmfp3 Description: INFINEON PMB7860V1.1E TELECOM IC
Packaging: Bulk
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59+9.94 EUR
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MB95F118MWPMC-GSE1 MB95F118MWPMC-GSE1 Infineon Technologies 5047 Description: IC MCU 8BIT 60KB FLASH 52LQFP
Packaging: Tray
Package / Case: 52-LQFP
Mounting Type: Surface Mount
Speed: 16MHz
Program Memory Size: 60KB (60K x 8)
RAM Size: 2K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
Core Processor: F²MC-8FX
Data Converters: A/D 8x8/10b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 2.4V ~ 5.5V
Connectivity: I2C, LINbus, SIO, UART/USART
Peripherals: LVD, POR, PWM, WDT
Supplier Device Package: 52-LQFP (10x10)
Number of I/O: 39
DigiKey Programmable: Not Verified
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5+5.01 EUR
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MB95F118MWPMC-GSE1 MB95F118MWPMC-GSE1 Infineon Technologies 5047 Description: IC MCU 8BIT 60KB FLASH 52LQFP
Packaging: Tray
Package / Case: 52-LQFP
Mounting Type: Surface Mount
Speed: 16MHz
Program Memory Size: 60KB (60K x 8)
RAM Size: 2K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
Core Processor: F²MC-8FX
Data Converters: A/D 8x8/10b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 2.4V ~ 5.5V
Connectivity: I2C, LINbus, SIO, UART/USART
Peripherals: LVD, POR, PWM, WDT
Supplier Device Package: 52-LQFP (10x10)
Number of I/O: 39
DigiKey Programmable: Not Verified
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BGS12SL6E6327 INFNS28176-1.pdf?t.download=true&u=5oefqw
Hersteller: Infineon Technologies
Description: GENERAL PURPOSE SWITCH SPDT
Part Status: Active
IIP3: 65dBm
Supplier Device Package: TSLP-6-4
Frequency Range: 100MHz ~ 6GHz
RF Type: GSM, LTE, WCDMA
Circuit: SPDT
Impedance: 50Ohm
Package / Case: 6-XFDFN
Packaging: Bulk
auf Bestellung 4207 Stücke:
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BGS12AL7-4E6327 INFNS13340-1.pdf?t.download=true&u=5oefqw
Hersteller: Infineon Technologies
Description: RF SWITCH
Part Status: Active
Supplier Device Package: PG-TSLP-7-4
Isolation: 20dB
Test Frequency: 2GHz
Frequency Range: 30MHz ~ 3GHz
Insertion Loss: 0.5dB
Voltage - Supply: 2.4V ~ 3.6V
Operating Temperature: -30°C ~ 85°C
RF Type: General Purpose
Circuit: SPDT
Mounting Type: Surface Mount
Impedance: 50Ohm
Package / Case: 6-XDFN Exposed Pad
Packaging: Bulk
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IPTG111N20NM3FDATMA1 Infineon-IPTG111N20NM3FD-DataSheet-v02_00-EN.pdf?fileId=5546d46277921c320177aa5221467dea
IPTG111N20NM3FDATMA1
Hersteller: Infineon Technologies
Description: TRENCH >=100V PG-HSOG-8
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSMD, Gull Wing
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10.8A (Ta), 108A (Tc)
Rds On (Max) @ Id, Vgs: 11.1mOhm @ 96A, 10V
Power Dissipation (Max): 3.8W (Ta), 375W (Tc)
Vgs(th) (Max) @ Id: 4V @ 267µA
Supplier Device Package: PG-HSOG-8-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 81 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7000 pF @ 100 V
Produkt ist nicht verfügbar
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IPTG111N20NM3FDATMA1 Infineon-IPTG111N20NM3FD-DataSheet-v02_00-EN.pdf?fileId=5546d46277921c320177aa5221467dea
IPTG111N20NM3FDATMA1
Hersteller: Infineon Technologies
Description: TRENCH >=100V PG-HSOG-8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSMD, Gull Wing
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10.8A (Ta), 108A (Tc)
Rds On (Max) @ Id, Vgs: 11.1mOhm @ 96A, 10V
Power Dissipation (Max): 3.8W (Ta), 375W (Tc)
Vgs(th) (Max) @ Id: 4V @ 267µA
Supplier Device Package: PG-HSOG-8-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 81 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7000 pF @ 100 V
auf Bestellung 1726 Stücke:
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AnzahlPrivatkunde
2+15.16 EUR
10+10.29 EUR
100+7.54 EUR
500+6.64 EUR
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IPTG210N25NM3FDATMA1 Infineon-IPTG210N25NM3FD-DataSheet-v02_00-EN.pdf?fileId=5546d46277921c320177aa52f0487dfb
IPTG210N25NM3FDATMA1
Hersteller: Infineon Technologies
Description: TRENCH >=100V PG-HSOG-8
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSMD, Gull Wing
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.7A (Ta), 77A (Tc)
Rds On (Max) @ Id, Vgs: 21mOhm @ 69A, 10V
Power Dissipation (Max): 3.8W (Ta), 375W (Tc)
Vgs(th) (Max) @ Id: 4V @ 267µA
Supplier Device Package: PG-HSOG-8-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 81 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7000 pF @ 125 V
auf Bestellung 1800 Stücke:
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1800+9.16 EUR
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ISC028N04NM5ATMA1 Infineon-ISC028N04NM5-DataSheet-v02_01-EN.pdf?fileId=5546d46271104011017110e46db8000a
ISC028N04NM5ATMA1
Hersteller: Infineon Technologies
Description: 40V 2.8M OPTIMOS MOSFET SUPERSO8
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 121A (Tc)
Rds On (Max) @ Id, Vgs: 2.8mOhm @ 50A, 10V
Power Dissipation (Max): 3W (Ta), 75W (Tc)
Vgs(th) (Max) @ Id: 3.4V @ 30µA
Supplier Device Package: PG-TDSON-8 FL
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2700 pF @ 20 V
auf Bestellung 5000 Stücke:
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AnzahlPrivatkunde
5000+0.73 EUR
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ISC028N04NM5ATMA1 Infineon-ISC028N04NM5-DataSheet-v02_01-EN.pdf?fileId=5546d46271104011017110e46db8000a
ISC028N04NM5ATMA1
Hersteller: Infineon Technologies
Description: 40V 2.8M OPTIMOS MOSFET SUPERSO8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 121A (Tc)
Rds On (Max) @ Id, Vgs: 2.8mOhm @ 50A, 10V
Power Dissipation (Max): 3W (Ta), 75W (Tc)
Vgs(th) (Max) @ Id: 3.4V @ 30µA
Supplier Device Package: PG-TDSON-8 FL
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2700 pF @ 20 V
auf Bestellung 6152 Stücke:
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AnzahlPrivatkunde
8+2.92 EUR
12+1.83 EUR
100+1.21 EUR
500+0.95 EUR
1000+0.87 EUR
2000+0.8 EUR
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PX8143HDMG018XTMA1
Hersteller: Infineon Technologies
Description: LED PX8143HDMG018XTMA1
Packaging: Tray
Part Status: Obsolete
Produkt ist nicht verfügbar
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KITAURIXTC224TFTTOBO1 Infineon-KIT_AURIX_TC224_TFT-UserManual-v01_00-EN.pdf?fileId=5546d4626c1f3dc3016c85c5843a7f4c
KITAURIXTC224TFTTOBO1
Hersteller: Infineon Technologies
Description: EVAL TC224 TFT AURIX
Platform: AURIX
Utilized IC / Part: TC224
Core Processor: TriCore™
Contents: Board(s), LCD
Type: MCU 32-Bit
Mounting Type: Fixed
Packaging: Box
auf Bestellung 1 Stücke:
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1+498.28 EUR
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KITAURIXTC265TFTTOBO1 Infineon-KIT_AURIX_TC2x5_TFT-UserManual-v02_00-EN.pdf?fileId=5546d4626c1f3dc3016c860ebecf0149
KITAURIXTC265TFTTOBO1
Hersteller: Infineon Technologies
Description: AURIX APPLICATION KIT TC265 TFT
Platform: AURIX
Utilized IC / Part: TC265
Core Processor: TriCore™
Contents: Board(s), LCD
Type: MCU 32-Bit
Mounting Type: Fixed
Packaging: Box
auf Bestellung 9 Stücke:
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1+537.24 EUR
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DHP0070N10N5AUMA1
Hersteller: Infineon Technologies
Description: IC GATE DRVR
Packaging: Tape & Reel (TR)
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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EVALHBPARALLELGANTOBO1 Infineon-Evaluationboard_EVAL_HB_ParallelGaN-ApplicationNotes-v01_00-EN.pdf?fileId=5546d462712ef9b701717861cc8a11c4
EVALHBPARALLELGANTOBO1
Hersteller: Infineon Technologies
Description: EVAL_HB_PARALLELGAN
Contents: Board(s)
Outputs and Type: 1 Non-Isolated Output
Main Purpose: AC/DC, Non-Isolated
Supplied Contents: Board(s)
Board Type: Fully Populated
Regulator Topology: Buck-Boost
Current - Output: 24A
Packaging: Bulk
auf Bestellung 28 Stücke:
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1+274.2 EUR
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IPC60R037P7X7SA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH HI POWER WAFER
Produkt ist nicht verfügbar
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PMB8753AV2.04
Hersteller: Infineon Technologies
Description: INFINEON PMB8753AV TELECOM IC -
Packaging: Bulk
auf Bestellung 15000 Stücke:
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52+10.29 EUR
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PMB8787V2.0 PMB8787.pdf?t.download=true&u=ovmfp3
Hersteller: Infineon Technologies
Description: PMB8787V2.0 TELECOM IC
Packaging: Bulk
auf Bestellung 200 Stücke:
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AnzahlPrivatkunde
47+11.55 EUR
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PEB2261NV2.0G
Hersteller: Infineon Technologies
Description: SICOFI 2 DUAL CH CODEC FILTER
auf Bestellung 2000 Stücke:
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PEF2261NGV2.0
Hersteller: Infineon Technologies
Description: SICOFI 2 DUAL CH CODEC FILTER
Packaging: Bulk
auf Bestellung 8000 Stücke:
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AnzahlPrivatkunde
21+29.02 EUR
Mindestbestellmenge: 21 Stücke
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PEB2261NV2.0
Hersteller: Infineon Technologies
Description: SICOFI 2 DUAL CHANNEL CODEC FILT
auf Bestellung 1091 Stücke:
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PEF2261NWDGV2.0
Hersteller: Infineon Technologies
Description: SICOFI 2 DUAL CH CODEC FILTER
Packaging: Bulk
auf Bestellung 3000 Stücke:
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AnzahlPrivatkunde
19+32.07 EUR
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PEF2261NV2.0
Hersteller: Infineon Technologies
Description: SICOFI 2 DUAL CHANNEL CODEC FILT
Packaging: Bulk
auf Bestellung 27371 Stücke:
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AnzahlPrivatkunde
19+32.24 EUR
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IAUC60N06S5N074ATMA1 Infineon-IAUC60N06S5N074-DataSheet-v01_00-EN.pdf?fileId=5546d4627a0b0c7b017a1eb505e56fee
IAUC60N06S5N074ATMA1
Hersteller: Infineon Technologies
Description: MOSFET_)40V 60V) PG-TDSON-8
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tj)
Rds On (Max) @ Id, Vgs: 7.4mOhm @ 30A, 10V
Power Dissipation (Max): 52W (Tc)
Vgs(th) (Max) @ Id: 3.4V @ 19µA
Supplier Device Package: PG-TDSON-8-33
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1461 pF @ 30 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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IAUC60N06S5L073ATMA1 Infineon-IAUC60N06S5L073-DataSheet-v01_01-EN.pdf?fileId=5546d4627a0b0c7b017a1eb4f9c26feb
IAUC60N06S5L073ATMA1
Hersteller: Infineon Technologies
Description: MOSFET_)40V 60V) PG-TDSON-8
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tj)
Rds On (Max) @ Id, Vgs: 7.3mOhm @ 30A, 10V
Power Dissipation (Max): 52W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 19µA
Supplier Device Package: PG-TDSON-8-33
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 22.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1655 pF @ 30 V
Qualification: AEC-Q101
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
5000+0.75 EUR
Mindestbestellmenge: 5000 Stücke
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IPDQ60R075CFD7XTMA1 Infineon-IPDQ60R075CFD7-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c8412f8d3018465868a09094e
IPDQ60R075CFD7XTMA1
Hersteller: Infineon Technologies
Description: HIGH POWER_NEW PG-HDSOP-22
Packaging: Tape & Reel (TR)
Package / Case: 22-PowerBSOP Module
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
Supplier Device Package: PG-HDSOP-22-1
Part Status: Active
Drain to Source Voltage (Vdss): 600 V
auf Bestellung 750 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
750+5.27 EUR
Mindestbestellmenge: 750 Stücke
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IPDQ60R055CFD7XTMA1 Infineon-IPDQ60R055CFD7-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c8412f8d3018465a43edc09a9
IPDQ60R055CFD7XTMA1
Hersteller: Infineon Technologies
Description: HIGH POWER_NEW PG-HDSOP-22
Packaging: Tape & Reel (TR)
Package / Case: 22-PowerBSOP Module
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
Supplier Device Package: PG-HDSOP-22-1
Part Status: Active
Drain to Source Voltage (Vdss): 600 V
Produkt ist nicht verfügbar
Mindestbestellmenge: 750 Stücke
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IPDQ60R045CFD7XTMA1 Infineon-IPDQ60R045CFD7-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c8412f8d3018465c80ad309dd
IPDQ60R045CFD7XTMA1
Hersteller: Infineon Technologies
Description: HIGH POWER_NEW PG-HDSOP-22
Packaging: Tape & Reel (TR)
Package / Case: 22-PowerBSOP Module
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
Supplier Device Package: PG-HDSOP-22-1
Part Status: Active
Drain to Source Voltage (Vdss): 600 V
auf Bestellung 750 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
750+7.66 EUR
Mindestbestellmenge: 750 Stücke
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IPDQ60R035CFD7XTMA1 Infineon-IPDQ60R035CFD7-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c8412f8d30184656b09ef091c
IPDQ60R035CFD7XTMA1
Hersteller: Infineon Technologies
Description: HIGH POWER_NEW PG-HDSOP-22
Packaging: Tape & Reel (TR)
Package / Case: 22-PowerBSOP Module
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
Supplier Device Package: PG-HDSOP-22-1
Part Status: Active
Drain to Source Voltage (Vdss): 600 V
auf Bestellung 750 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
750+10.94 EUR
Mindestbestellmenge: 750 Stücke
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IPDQ60R022S7XTMA1 Infineon-IPDQ60R022S7-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c7e7124d1017f06a8ffdb1518
IPDQ60R022S7XTMA1
Hersteller: Infineon Technologies
Description: HIGH POWER_NEW PG-HDSOP-22
Packaging: Tape & Reel (TR)
Package / Case: 22-PowerBSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 22mOhm @ 23A, 12V
Power Dissipation (Max): 416W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1.44mA
Supplier Device Package: PG-HDSOP-22-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 12 V
Input Capacitance (Ciss) (Max) @ Vds: 5639 pF @ 300 V
Produkt ist nicht verfügbar
Mindestbestellmenge: 750 Stücke
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IPP050N10NF2SAKMA1 Infineon-IPP050N10NF2S-DataSheet-v02_00-EN.pdf?fileId=5546d46276fa42a30176fa66f3a90008
IPP050N10NF2SAKMA1
Hersteller: Infineon Technologies
Description: TRENCH >=100V
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19.4A (Ta), 110A (Tc)
Rds On (Max) @ Id, Vgs: 5mOhm @ 60A, 10V
Power Dissipation (Max): 3.8W (Ta), 150W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 84µA
Supplier Device Package: PG-TO220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 76 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3600 pF @ 50 V
auf Bestellung 536 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
4+5.97 EUR
10+3.88 EUR
50+2.98 EUR
100+2.68 EUR
500+2.17 EUR
Mindestbestellmenge: 4 Stücke
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DHP1050N10N5AUMA1 Infineon-DHPX050N10N5_Datasheet-DataSheet-v01_00-EN.pdf?fileId=5546d4627aa5d4f5017b2bf3e3db0174
DHP1050N10N5AUMA1
Hersteller: Infineon Technologies
Description: INT. POWERSTAGE/DRIVER, PG-IQFN-
Packaging: Tape & Reel (TR)
Package / Case: 36-PowerVFQFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 8V ~ 17V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 90 V
Supplier Device Package: PG-IQFN-36-1
Channel Type: Single
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: N-Channel MOSFET
Current - Peak Output (Source, Sink): 4A, 4A
Part Status: Active
Produkt ist nicht verfügbar
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DHP1050N10N5AUMA1 Infineon-DHPX050N10N5_Datasheet-DataSheet-v01_00-EN.pdf?fileId=5546d4627aa5d4f5017b2bf3e3db0174
DHP1050N10N5AUMA1
Hersteller: Infineon Technologies
Description: INT. POWERSTAGE/DRIVER, PG-IQFN-
Packaging: Cut Tape (CT)
Package / Case: 36-PowerVFQFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 8V ~ 17V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 90 V
Supplier Device Package: PG-IQFN-36-1
Channel Type: Single
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: N-Channel MOSFET
Current - Peak Output (Source, Sink): 4A, 4A
Part Status: Active
Produkt ist nicht verfügbar
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DHP0050N10N5AUMA1 Infineon-DHPX050N10N5_Datasheet-DataSheet-v01_00-EN.pdf?fileId=5546d4627aa5d4f5017b2bf3e3db0174
Hersteller: Infineon Technologies
Description: INT. POWERSTAGE/DRIVER PG-IQFN-3
Packaging: Tape & Reel (TR)
Package / Case: 36-PowerVFQFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 8V ~ 17V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 90 V
Supplier Device Package: PG-IQFN-36-1
Channel Type: Single
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: N-Channel MOSFET
Current - Peak Output (Source, Sink): 4A, 6A
Part Status: Not For New Designs
Produkt ist nicht verfügbar
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IPU60R1K4C6 INFNS17573-1.pdf?t.download=true&u=5oefqw
IPU60R1K4C6
Hersteller: Infineon Technologies
Description: N-CHANNEL POWER MOSFET
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Packaging: Bulk
Input Capacitance (Ciss) (Max) @ Vds: 200 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 9.4 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PG-TO-251-3-341
Vgs(th) (Max) @ Id: 3.5V @ 90µA
Power Dissipation (Max): 28.4W (Tc)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 1.1A, 10V
Current - Continuous Drain (Id) @ 25°C: 3.2A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
auf Bestellung 2370 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1072+0.58 EUR
Mindestbestellmenge: 1072 Stücke
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IPDD60R145CFD7XTMA1 Infineon-IPDD60R145CFD7-DataSheet-v02_00-EN.pdf?fileId=5546d4627506bb3201751c2ea92342b7
IPDD60R145CFD7XTMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 600V 24A HDSOP-10
Rds On (Max) @ Id, Vgs: 145mOhm @ 6A, 10V
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 10-PowerSOP Module
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 1199 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Part Status: Active
Supplier Device Package: PG-HDSOP-10-1
Vgs(th) (Max) @ Id: 4.5V @ 300µA
Power Dissipation (Max): 160W (Tc)
auf Bestellung 1700 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1700+2.82 EUR
Mindestbestellmenge: 1700 Stücke
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DDB2U60N12W1RFB11BPSA1 Infineon-DDB2U60N12W1RF_B11-DataSheet-v02_21-EN.pdf?fileId=5546d4627956d53f0179796012a65183
DDB2U60N12W1RFB11BPSA1
Hersteller: Infineon Technologies
Description: BRIDGE RECT 1P 1.2KV 60A EASY1B1
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Diode Type: Single Phase
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Silicon Carbide Schottky
Supplier Device Package: AG-EASY1B-1
Part Status: Active
Voltage - Peak Reverse (Max): 1.2 kV
Current - Average Rectified (Io): 60 A
Voltage - Forward (Vf) (Max) @ If: 1.85 V @ 60 A
Current - Reverse Leakage @ Vr: 174 µA @ 1200 V
Produkt ist nicht verfügbar
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ISP14EP15LMXTSA1 Infineon-ISP14EP15LM-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c7bb971ed017bdf12458d1c4b
ISP14EP15LMXTSA1
Hersteller: Infineon Technologies
Description: SMALL SIGNAL MOSFETS PG-SOT223-4
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 770mA (Ta), 1.29A (Tc)
Rds On (Max) @ Id, Vgs: 1.38Ohm @ 800mA, 10V
Power Dissipation (Max): 1.8W (Ta), 5W (Tc)
Vgs(th) (Max) @ Id: 2V @ 270µA
Supplier Device Package: PG-SOT223-4
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 11.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 530 pF @ 75 V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1000+0.33 EUR
2000+0.32 EUR
Mindestbestellmenge: 1000 Stücke
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ISP14EP15LMXTSA1 Infineon-ISP14EP15LM-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c7bb971ed017bdf12458d1c4b
ISP14EP15LMXTSA1
Hersteller: Infineon Technologies
Description: SMALL SIGNAL MOSFETS PG-SOT223-4
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 770mA (Ta), 1.29A (Tc)
Rds On (Max) @ Id, Vgs: 1.38Ohm @ 800mA, 10V
Power Dissipation (Max): 1.8W (Ta), 5W (Tc)
Vgs(th) (Max) @ Id: 2V @ 270µA
Supplier Device Package: PG-SOT223-4
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 11.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 530 pF @ 75 V
auf Bestellung 3799 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
28+0.75 EUR
41+0.51 EUR
46+0.46 EUR
100+0.39 EUR
250+0.37 EUR
500+0.35 EUR
Mindestbestellmenge: 28 Stücke
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IPB100N06S2L05ATMA2 Infineon-IPP_B100N06S2L_05-DS-v01_00-en%5B1%5D.pdf?fileId=db3a304412b407950112b43227e5573c&ack=t
IPB100N06S2L05ATMA2
Hersteller: Infineon Technologies
Description: MOSFET N-CH 55V 100A TO263-3
Input Capacitance (Ciss) (Max) @ Vds: 5660 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 230 nC @ 10 V
Drain to Source Voltage (Vdss): 55 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: PG-TO263-3-2
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 300W (Tc)
Rds On (Max) @ Id, Vgs: 4.4mOhm @ 80A, 10V
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
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IDK03G65C5XTMA2 Infineon-IDK03G65C5-DS-v02_00-en.pdf?fileId=db3a304342e8be2c0142eb7618470089
IDK03G65C5XTMA2
Hersteller: Infineon Technologies
Description: DIODE SIL CARB 650V 3A PGTO2632
Current - Reverse Leakage @ Vr: 500 µA @ 650 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 3 A
Voltage - DC Reverse (Vr) (Max): 650 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: PG-TO263-2
Current - Average Rectified (Io): 3A
Capacitance @ Vr, F: 100pF @ 1V, 1MHz
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Bulk
auf Bestellung 14000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
347+1.73 EUR
Mindestbestellmenge: 347 Stücke
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SLS32AIA010MLUSON10XTMA2 Infineon-OPTIGA%20TRUST%20M%20SLS32AIA-DataSheet-v03_00-EN.pdf?fileId=5546d4626c1f3dc3016c853c271a7e4a
SLS32AIA010MLUSON10XTMA2
Hersteller: Infineon Technologies
Description: OPTIGA TRUST M V3 HIGH TEMP
DigiKey Programmable: Not Verified
Part Status: Active
Supplier Device Package: PG-USON-10-2
Core Processor: 16-Bit
Applications: Security
Program Memory Type: NVM (10kB)
Voltage - Supply: 1.62V ~ 5.5V
Operating Temperature: -40°C ~ 105°C (TA)
Interface: I2C
Mounting Type: Surface Mount
Package / Case: 10-UFDFN Exposed Pad
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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SLS32AIA010MLUSON10XTMA2 Infineon-OPTIGA%20TRUST%20M%20SLS32AIA-DataSheet-v03_00-EN.pdf?fileId=5546d4626c1f3dc3016c853c271a7e4a
SLS32AIA010MLUSON10XTMA2
Hersteller: Infineon Technologies
Description: OPTIGA TRUST M V3 HIGH TEMP
DigiKey Programmable: Not Verified
Part Status: Active
Supplier Device Package: PG-USON-10-2
Core Processor: 16-Bit
Applications: Security
Program Memory Type: NVM (10kB)
Voltage - Supply: 1.62V ~ 5.5V
Operating Temperature: -40°C ~ 105°C (TA)
Interface: I2C
Mounting Type: Surface Mount
Package / Case: 10-UFDFN Exposed Pad
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
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BTS244ZE3062AATMA2 INFNS27930-1.pdf?t.download=true&u=5oefqw
BTS244ZE3062AATMA2
Hersteller: Infineon Technologies
Description: MOSFET N-CH 55V 35A TO263-5
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 2660 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
Drain to Source Voltage (Vdss): 55 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Not For New Designs
Supplier Device Package: PG-TO263-5-2
Vgs(th) (Max) @ Id: 2V @ 130µA
Power Dissipation (Max): 170W (Tc)
FET Feature: Temperature Sensing Diode
Rds On (Max) @ Id, Vgs: 13mOhm @ 19A, 10V
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-5, D2PAK (4 Leads + Tab), TO-263BB
Packaging: Tape & Reel (TR)
Grade: Automotive
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
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BTS244ZE3062AATMA2 INFNS27930-1.pdf?t.download=true&u=5oefqw
BTS244ZE3062AATMA2
Hersteller: Infineon Technologies
Description: MOSFET N-CH 55V 35A TO263-5
Qualification: AEC-Q101
Grade: Automotive
FET Feature: Temperature Sensing Diode
Rds On (Max) @ Id, Vgs: 13mOhm @ 19A, 10V
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-5, D2PAK (4 Leads + Tab), TO-263BB
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 2660 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
Drain to Source Voltage (Vdss): 55 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Not For New Designs
Supplier Device Package: PG-TO263-5-2
Vgs(th) (Max) @ Id: 2V @ 130µA
Power Dissipation (Max): 170W (Tc)
auf Bestellung 5 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2+11.79 EUR
Mindestbestellmenge: 2 Stücke
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IPB80N06S4L05ATMA2 Infineon-I80N06S4L_05-DS-v01_00-en.pdf?fileId=db3a30431ff98815012038e65fed0d07
Hersteller: Infineon Technologies
Description: MOSFET_)40V,60V)
Input Capacitance (Ciss) (Max) @ Vds: 8180 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±16V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PG-TO263-3-2
Vgs(th) (Max) @ Id: 2.2V @ 60µA
Power Dissipation (Max): 107W (Tc)
Rds On (Max) @ Id, Vgs: 5.1mOhm @ 80A, 10V
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Bulk
Produkt ist nicht verfügbar
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IPB80P04P4L06ATMA2 Infineon-IPP_B_I80P04P4L-DataSheet-v01_01-EN.pdf?fileId=db3a30432f69f146012f782f18402e14
IPB80P04P4L06ATMA2
Hersteller: Infineon Technologies
Description: MOSFET P-CH 40V 80A TO263-3
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 6.7mOhm @ 80A, 10V
Power Dissipation (Max): 88W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 150µA
Supplier Device Package: PG-TO263-3-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +5V, -16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 104 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6580 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1000+1.58 EUR
Mindestbestellmenge: 1000 Stücke
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IPB80P04P4L06ATMA2 Infineon-IPP_B_I80P04P4L-DataSheet-v01_01-EN.pdf?fileId=db3a30432f69f146012f782f18402e14
IPB80P04P4L06ATMA2
Hersteller: Infineon Technologies
Description: MOSFET P-CH 40V 80A TO263-3
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 6.7mOhm @ 80A, 10V
Power Dissipation (Max): 88W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 150µA
Supplier Device Package: PG-TO263-3-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +5V, -16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 104 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6580 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 2396 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
5+4.8 EUR
10+3.09 EUR
100+2.13 EUR
500+1.73 EUR
Mindestbestellmenge: 5 Stücke
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IPP80P03P4L04AKSA2 Infineon-I80P03P4L_04-DataSheet-v01_01-EN.pdf?fileId=db3a30431ddc9372011e07e95eb827d7
IPP80P03P4L04AKSA2
Hersteller: Infineon Technologies
Description: MOSFET P-CH 30V 80A TO220-3
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): +5V, -16V
Supplier Device Package: PG-TO220-3-1
Vgs(th) (Max) @ Id: 2V @ 253µA
Power Dissipation (Max): 137W (Tc)
Rds On (Max) @ Id, Vgs: 4.4mOhm @ 80A, 10V
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 11300 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 160 nC @ 10 V
auf Bestellung 451 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
4+6.33 EUR
50+3.27 EUR
100+3.01 EUR
Mindestbestellmenge: 4 Stücke
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FS25R12W1T7BOMA1 Infineon-FS25R12W1T7-DataSheet-v02_00-EN.pdf?fileId=5546d46270c4f93e0170f188efca7334
FS25R12W1T7BOMA1
Hersteller: Infineon Technologies
Description: LOW POWER EASY AG-EASY1B-1
Input Capacitance (Cies) @ Vce: 4.77 nF @ 25 V
Current - Collector Cutoff (Max): 5.6 µA
Power - Max: 20 mW
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 25 A
Part Status: Active
IGBT Type: Trench Field Stop
Supplier Device Package: AG-EASY1B
NTC Thermistor: Yes
Operating Temperature: -40°C ~ 175°C (TJ)
Configuration: Three Phase Inverter
Input: Standard
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Tray
auf Bestellung 19 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1+59.64 EUR
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FS25R12W1T7PB11BPSA1 Infineon-FS25R12W1T7P_B11-DataSheet-v02_00-EN.pdf?fileId=5546d46273a5366f0173e165e5d65778
FS25R12W1T7PB11BPSA1
Hersteller: Infineon Technologies
Description: LOW POWER EASY AG-EASY1B-2
Input Capacitance (Cies) @ Vce: 4.77 nF @ 25 V
Current - Collector Cutoff (Max): 5.6 µA
Power - Max: 20 mW
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 25 A
Part Status: Active
IGBT Type: Trench Field Stop
Supplier Device Package: Module
NTC Thermistor: Yes
Operating Temperature: -40°C ~ 175°C (TJ)
Configuration: Three Phase Inverter
Input: Standard
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Tray
auf Bestellung 9 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1+72.07 EUR
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FP25R12W1T7B3BPSA1 Infineon-FP25R12W1T7-DataSheet-v00_10-EN.pdf?fileId=5546d46273a5366f017426870cd665c4
FP25R12W1T7B3BPSA1
Hersteller: Infineon Technologies
Description: IGBT MODULE 1200V 25A AG-EASY1B
Supplier Device Package: AG-EASY1B
NTC Thermistor: Yes
Operating Temperature: -40°C ~ 175°C (TJ)
Configuration: Three Phase Inverter
Input: Three Phase Bridge Rectifier
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Tray
Input Capacitance (Cies) @ Vce: 4.77 nF @ 25 V
Current - Collector Cutoff (Max): 5.6 µA
Power - Max: 20 mW
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 25 A
Part Status: Active
IGBT Type: Trench Field Stop
Produkt ist nicht verfügbar
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FP25R12W1T7BOMA1 Infineon-FP25R12W1T7-DataSheet-v00_10-EN.pdf?fileId=5546d46273a5366f017426870cd665c4
FP25R12W1T7BOMA1
Hersteller: Infineon Technologies
Description: IGBT MODULE 1200V 25A AG-EASY1B
Package / Case: Module
Packaging: Tray
Input Capacitance (Cies) @ Vce: 4.77 nF @ 25 V
Current - Collector Cutoff (Max): 5.6 µA
Power - Max: 20 mW
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 25 A
Part Status: Active
IGBT Type: Trench Field Stop
Supplier Device Package: AG-EASY1B
NTC Thermistor: Yes
Operating Temperature: -40°C ~ 175°C (TJ)
Configuration: Three Phase Inverter
Input: Three Phase Bridge Rectifier
Mounting Type: Chassis Mount
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
FP25R12W2T7BPSA1 Infineon-FP25R12W2T7-DataSheet-v02_00-EN.pdf?fileId=5546d46273a5366f01742692f69465ca
FP25R12W2T7BPSA1
Hersteller: Infineon Technologies
Description: IGBT MODULE 1200V 25A AG-EASY2B
Input Capacitance (Cies) @ Vce: 4.77 nF @ 25 V
Current - Collector Cutoff (Max): 5.6 µA
Power - Max: 20 mW
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 25 A
Part Status: Active
IGBT Type: Trench Field Stop
Supplier Device Package: AG-EASY2B
NTC Thermistor: Yes
Operating Temperature: -40°C ~ 175°C (TJ)
Configuration: Three Phase Inverter
Input: Three Phase Bridge Rectifier
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Tray
auf Bestellung 15 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1+80.78 EUR
15+58.19 EUR
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FP25R12W1T7PBPSA1 Infineon-FP25R12W1T7-DataSheet-v00_10-EN.pdf?fileId=5546d46273a5366f017426870cd665c4
FP25R12W1T7PBPSA1
Hersteller: Infineon Technologies
Description: IGBT MODULE 1200V 25A AG-EASY1B
Input Capacitance (Cies) @ Vce: 4.77 nF @ 25 V
Current - Collector Cutoff (Max): 5.6 µA
Power - Max: 20 mW
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 25 A
Part Status: Active
IGBT Type: Trench Field Stop
Supplier Device Package: AG-EASY1B
NTC Thermistor: Yes
Operating Temperature: -40°C ~ 175°C (TJ)
Configuration: Three Phase Inverter
Input: Three Phase Bridge Rectifier
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Tray
auf Bestellung 10 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1+82.62 EUR
Im Einkaufswagen  Stück im Wert von  UAH
F475R07W2H3B51BPSA1 Infineon-F4-75R07W2H3_B51-DS-v02_00-EN.pdf?fileId=5546d4624933b87501497522b7240cf9
Hersteller: Infineon Technologies
Description: IGBT MODULE 650V 75A 250W MODULE
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.55V @ 15V, 37.5A
NTC Thermistor: Yes
Supplier Device Package: Module
Part Status: Obsolete
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Power - Max: 250 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 4.7 nF @ 25 V
Produkt ist nicht verfügbar
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1SD418F2FZ1200R33KNPSA1
Hersteller: Infineon Technologies
Description: MODULE GATE DRIVER
Packaging: Tray
Produkt ist nicht verfügbar
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XC2336B40F20LAAKXUMA1 XC2336B.pdf
XC2336B40F20LAAKXUMA1
Hersteller: Infineon Technologies
Description: IC MCU 16/32B 320KB FLASH 64LQFP
auf Bestellung 1900 Stücke:
Lieferzeit 10-14 Tag (e)
Mindestbestellmenge: 60 Stücke
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XC2336B40F80LAAKXUMA1 XC2336B.pdf
XC2336B40F80LAAKXUMA1
Hersteller: Infineon Technologies
Description: IC MCU 16/32B 320KB FLASH 64LQFP
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PMB2411FV1.1
Hersteller: Infineon Technologies
Description: DUAL BAND RECIEVER
Packaging: Bulk
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
103+5.39 EUR
Mindestbestellmenge: 103 Stücke
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PMB7860V1.1E-GICM PMB7860.pdf?t.download=true&u=ovmfp3
Hersteller: Infineon Technologies
Description: INFINEON PMB7860V1.1E TELECOM IC
Packaging: Bulk
auf Bestellung 15000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
59+9.94 EUR
Mindestbestellmenge: 59 Stücke
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MB95F118MWPMC-GSE1 5047
MB95F118MWPMC-GSE1
Hersteller: Infineon Technologies
Description: IC MCU 8BIT 60KB FLASH 52LQFP
Packaging: Tray
Package / Case: 52-LQFP
Mounting Type: Surface Mount
Speed: 16MHz
Program Memory Size: 60KB (60K x 8)
RAM Size: 2K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
Core Processor: F²MC-8FX
Data Converters: A/D 8x8/10b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 2.4V ~ 5.5V
Connectivity: I2C, LINbus, SIO, UART/USART
Peripherals: LVD, POR, PWM, WDT
Supplier Device Package: 52-LQFP (10x10)
Number of I/O: 39
DigiKey Programmable: Not Verified
auf Bestellung 561 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
5+5.01 EUR
Mindestbestellmenge: 5 Stücke
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MB95F118MWPMC-GSE1 5047
MB95F118MWPMC-GSE1
Hersteller: Infineon Technologies
Description: IC MCU 8BIT 60KB FLASH 52LQFP
Packaging: Tray
Package / Case: 52-LQFP
Mounting Type: Surface Mount
Speed: 16MHz
Program Memory Size: 60KB (60K x 8)
RAM Size: 2K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
Core Processor: F²MC-8FX
Data Converters: A/D 8x8/10b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 2.4V ~ 5.5V
Connectivity: I2C, LINbus, SIO, UART/USART
Peripherals: LVD, POR, PWM, WDT
Supplier Device Package: 52-LQFP (10x10)
Number of I/O: 39
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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