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TLE72722EXUMA1 TLE72722EXUMA1 Infineon Technologies Infineon-TLE7272-2-DS-v01_00-EN.pdf?fileId=5546d46259d9a4bf0159f9d6e8763ee2 Description: IC REG LINEAR 5V PG-SSOP-14-EP
Packaging: Cut Tape (CT)
Package / Case: 14-LSSOP (0.154", 3.90mm Width) Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 150°C
Output Configuration: Positive
Current - Quiescent (Iq): 30 µA
Voltage - Input (Max): 42V
Number of Regulators: 1
Supplier Device Package: PG-SSOP-14-EP
Voltage - Output (Min/Fixed): 5V
Control Features: Enable, Reset
Grade: Automotive
Part Status: Active
PSRR: 60dB (100Hz)
Voltage Dropout (Max): 0.5V @ 200mA
Protection Features: Over Current, Over Temperature, Short Circuit
Current - Supply (Max): 40 µA
Qualification: AEC-Q100
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5+4.08 EUR
10+3.04 EUR
25+2.78 EUR
100+2.49 EUR
250+2.36 EUR
500+2.28 EUR
1000+2.21 EUR
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TLE82422LXUMA2 TLE82422LXUMA2 Infineon Technologies Infineon-TLE8242_2-DS-v01_00-en.pdf?fileId=db3a3043271faefd012743c4b3380fdd Description: IC CURRENT SOURCE 64LQFP
Packaging: Tape & Reel (TR)
Package / Case: 64-LQFP
Sensing Method: Low-Side
Mounting Type: Surface Mount
Function: Current Source
Voltage - Input: 5.5V ~ 42V
Operating Temperature: -40°C ~ 150°C
Supplier Device Package: PG-LQFP-64-4
Part Status: Active
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1900+17.95 EUR
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PEB4265TV1.1GD Infineon Technologies INTL-S-A0006019977-1.pdf?t.download=true&u=5oefqw Description: DUSLIC DUAL CHANNEL SLIC
Packaging: Bulk
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BAT5402LRHE6327XTSA1 BAT5402LRHE6327XTSA1 Infineon Technologies INFNS15399-1.pdf?t.download=true&u=5oefqw Description: DIODE SCHOTT 30V 200MA TSLP-2-7
Packaging: Tape & Reel (TR)
Package / Case: SOD-882
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 5 ns
Technology: Schottky
Capacitance @ Vr, F: 10pF @ 1V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: PG-TSLP-2-7
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 100 mA
Current - Reverse Leakage @ Vr: 2 µA @ 25 V
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MB4213PF-G-BND-JN-ERE1 Infineon Technologies Description: IC SUPERVISOR REG DC/DC 14SOP
Packaging: Tape & Reel (TR)
Part Status: Obsolete
Produkt ist nicht verfügbar
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63-8035 63-8035 Infineon Technologies Description: IGBT CHIP
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IPB200N15N3 IPB200N15N3 Infineon Technologies Infineon-IPB200N15N3%20G-DS-v02_07-EN.pdf?fileId=5546d4624fb7fef2014ff59230602dbb Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ 50A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 4V @ 90µA
Supplier Device Package: PG-TO263-3-2
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1820 pF @ 75 V
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IPB200N15N3G IPB200N15N3G Infineon Technologies INFN-S-A0001300200-1.pdf?t.download=true&u=5oefqw Description: IPB200N15 - 12V-300V N-CHANNEL P
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IPI200N15N3 G IPI200N15N3 G Infineon Technologies IPD200N15N3_Rev2.02.pdf?folderId=db3a304313b8b5a60113cee7c66a02d6&fileId=db3a304319c6f18c0119cd1cc23279be Description: MOSFET N-CH 150V 50A TO262-3
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ 50A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 4V @ 90µA
Supplier Device Package: PG-TO262-3
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1820 pF @ 75 V
Produkt ist nicht verfügbar
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BTS5016-1EKB Infineon Technologies INFNS19104-1.pdf?t.download=true&u=5oefqw Description: BTS5016 - PROFET - SMART HIGH SI
Features: Slew Rate Controlled
Packaging: Bulk
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 16mOhm
Input Type: Non-Inverting
Voltage - Load: 5V ~ 28V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 8A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-DSO-14-30
Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, Over Voltage, Short Circuit
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BTS50161EKBXUMA1 BTS50161EKBXUMA1 Infineon Technologies Infineon-BTS5016-1EKB-DS-v02_00-EN.pdf?fileId=5546d4625a888733015aa41a7a3d1131 Description: IC PWR SWITCH N-CHAN 1:1 DSO-14
Packaging: Bulk
Package / Case: 14-SOIC (0.154", 3.90mm Width) Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 16mOhm
Input Type: Non-Inverting
Voltage - Load: 5V ~ 28V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 8A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-DSO-14-47-EP
Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, Over Voltage
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213+2.18 EUR
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TLE9872QXA40XUMA1 Infineon Technologies Infineon-TLE9872QXA40-DataSheet-v01_00-EN.pdf?fileId=5546d46274dd77260174e8c790ce34a8 Description: EMBEDDED POWER
Packaging: Cut Tape (CT)
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: LINbus, SPI, SSC, UART/USART
RAM Size: 8K x 8
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 5.5V ~ 27V
Controller Series: TLE987x
Program Memory Type: FLASH (256kB)
Core Processor: ARM® Cortex®-M3
Supplier Device Package: PG-VQFN-48-29
Grade: Automotive
Part Status: Active
Number of I/O: 10
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
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2+11.7 EUR
10+9.02 EUR
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100+7.61 EUR
250+7.26 EUR
500+7.05 EUR
1000+6.88 EUR
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BSM50GX120DN2BOSA1 Infineon Technologies Description: IGBT MODULE 2 LOW PWR ECONO2-2
Packaging: Tray
Produkt ist nicht verfügbar
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BTS781GP Infineon Technologies Description: BRUSH DC MOTOR CONTROLLER
Produkt ist nicht verfügbar
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IPW65R660CFDFKSA1 IPW65R660CFDFKSA1 Infineon Technologies IPW65R660CFD_2.41.pdf?folderId=db3a3043163797a6011637d4bae7003b&fileId=db3a30432f29829e012f2efe7ac539b4 Description: MOSFET N-CH 700V 6A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 660mOhm @ 2.1A, 10V
Power Dissipation (Max): 62.5W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 200µA
Supplier Device Package: PG-TO247-3-1
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 615 pF @ 100 V
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IM818MCCXKMA1 IM818MCCXKMA1 Infineon Technologies Infineon-IM818-MCC-DS-v02_01-EN.pdf?fileId=5546d46265f064ff0165f9e91e3c2e9e Description: IGBT MODULE 1200V 16A 24PWRDIP
Packaging: Tube
Package / Case: 24-PowerDIP Module (1.205", 30.60mm)
Mounting Type: Through Hole
Type: IGBT
Configuration: 3 Phase Inverter
Voltage - Isolation: 2500Vrms
Part Status: Active
Current: 16 A
Voltage: 1.2 kV
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TDA21470AUMA1 TDA21470AUMA1 Infineon Technologies LatestGeneration_IntegratedPwrStages_25V_PB_v01_3-21-16.pdf Description: IC INTEG PWR STAGES IQFN-39
Packaging: Tape & Reel (TR)
Package / Case: 39-PowerVFQFN
Mounting Type: Surface Mount
Type: Integrated Power Stages
Supplier Device Package: PG-IQFN-39
Part Status: Not For New Designs
DigiKey Programmable: Not Verified
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5000+3.7 EUR
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TDA21470AUMA1 TDA21470AUMA1 Infineon Technologies LatestGeneration_IntegratedPwrStages_25V_PB_v01_3-21-16.pdf Description: IC INTEG PWR STAGES IQFN-39
Packaging: Cut Tape (CT)
Package / Case: 39-PowerVFQFN
Mounting Type: Surface Mount
Type: Integrated Power Stages
Supplier Device Package: PG-IQFN-39
Part Status: Not For New Designs
DigiKey Programmable: Not Verified
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3+6.85 EUR
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25+4.79 EUR
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250+4.12 EUR
500+3.99 EUR
1000+3.88 EUR
2500+3.77 EUR
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EVALPFC5KIKWWR5SYSTOBO1 EVALPFC5KIKWWR5SYSTOBO1 Infineon Technologies Infineon-EVAL-PFC5KIKWWR5SYS-UserManual-v01_00-EN.pdf?fileId=5546d46278d64ffd0178f986f0b708d4 Description: EVAL BOARD FOR IKW40N65WR5
Packaging: Bulk
Function: Power Factor Correction
Type: Power Management
Contents: Board(s)
Utilized IC / Part: IKW40N65WR5, IDW60C65D1, 1ED44175
Supplied Contents: Board(s)
Primary Attributes: 180 ~ 264VAC Input
Embedded: No
Part Status: Active
Produkt ist nicht verfügbar
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IPA80R460CEXKSA2 IPA80R460CEXKSA2 Infineon Technologies Infineon-IPA80R460CE-DS-v02_00-EN.pdf?fileId=5546d46249be182c0149c79199ef1e55 Description: MOSFET N-CH 800V 10.8A TO220
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10.8A (Ta)
Rds On (Max) @ Id, Vgs: 460mOhm @ 7.1A, 10V
Power Dissipation (Max): 34W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 680µA
Supplier Device Package: PG-TO220-3-31
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 100 V
auf Bestellung 500 Stücke:
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4+4.44 EUR
50+2.41 EUR
100+2.21 EUR
500+1.83 EUR
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BAS7004E6433HTMA1 BAS7004E6433HTMA1 Infineon Technologies INFNS30154-1.pdf?t.download=true&u=5oefqw Description: DIODE ARRAY SCHOT 70V 70MA SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 100 ps
Technology: Schottky
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 70mA (DC)
Supplier Device Package: PG-SOT23
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 70 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 15 mA
Current - Reverse Leakage @ Vr: 100 nA @ 50 V
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IPD60R600PFD7SAUMA1 IPD60R600PFD7SAUMA1 Infineon Technologies Infineon-IPD60R600PFD7S-DataSheet-v02_00-EN.pdf?fileId=5546d4626eab8fbf016ed61c45f839e9 Description: CONSUMER PG-TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 1.7A, 10V
Power Dissipation (Max): 31W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 80µA
Supplier Device Package: PG-TO252-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 8.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 344 pF @ 400 V
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IPD60R600PFD7SAUMA1 IPD60R600PFD7SAUMA1 Infineon Technologies Infineon-IPD60R600PFD7S-DataSheet-v02_00-EN.pdf?fileId=5546d4626eab8fbf016ed61c45f839e9 Description: CONSUMER PG-TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 1.7A, 10V
Power Dissipation (Max): 31W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 80µA
Supplier Device Package: PG-TO252-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 8.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 344 pF @ 400 V
auf Bestellung 4694 Stücke:
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12+1.47 EUR
100+0.98 EUR
500+0.77 EUR
1000+0.7 EUR
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PX3746DDQSM1383XUMA1 Infineon Technologies Description: LED PX3746DDQSM1383XUMA1
Packaging: Tray
Part Status: Obsolete
Produkt ist nicht verfügbar
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S25FL064P0XBHV020 S25FL064P0XBHV020 Infineon Technologies Infineon-S25FL064P_64-Mbit_3.0_V_SPI_Flash_Memory-DataSheet-v11_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed4dcb1535c&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Description: IC FLASH 64MBIT 104MHZ 24BGA
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26+2.36 EUR
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IAUT165N08S5N029ATMA1 IAUT165N08S5N029ATMA1 Infineon Technologies Infineon-IAUT165N08S5N029-DS-v01_00-EN.pdf?fileId=5546d46258fc0bc10158fda2c4bd0569 Description: MOSFET N-CH 80V 165A 8HSOF
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 165A (Tc)
Rds On (Max) @ Id, Vgs: 2.9mOhm @ 80A, 10V
Power Dissipation (Max): 167W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 108µA
Supplier Device Package: PG-HSOF-8-1
Grade: Automotive
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6370 pF @ 40 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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SAF-XC164LM-16F20F BA SAF-XC164LM-16F20F BA Infineon Technologies XC164LM.pdf Description: IC MCU 16BIT 128KB FLASH 64LQFP
Packaging: Tape & Reel (TR)
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Speed: 20MHz
Program Memory Size: 128KB (128K x 8)
RAM Size: 8K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: C166SV2
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 2.35V ~ 2.7V
Connectivity: SPI, UART/USART
Peripherals: PWM, WDT
Supplier Device Package: PG-LQFP-64-4
Number of I/O: 47
DigiKey Programmable: Not Verified
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SAF-XC164LM-16F40F BA SAF-XC164LM-16F40F BA Infineon Technologies XC164LM.pdf Description: IC MCU 16BIT 128KB FLASH 64LQFP
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BTS5020-1EKA Infineon Technologies INFNS29317-1.pdf?t.download=true&u=5oefqw Description: BTS5020 - PROFET - SMART HIGH SI
Features: Slew Rate Controlled
Packaging: Bulk
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 20mOhm
Input Type: Non-Inverting
Voltage - Load: 5V ~ 28V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 6.5A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-DSO-14-30
Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, Over Voltage, Short Circuit, UVLO
Part Status: Active
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IRF8714TRPBF-1 IRF8714TRPBF-1 Infineon Technologies IRF8714PbF-1_11-22-13.pdf Description: MOSFET N-CH 30V 14A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Ta)
Rds On (Max) @ Id, Vgs: 8.7mOhm @ 14A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 2.35V @ 25µA
Supplier Device Package: 8-SOIC
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1020 pF @ 15 V
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DD261N20KHPSA1 DD261N20KHPSA1 Infineon Technologies Infineon-DD261N-DS-v03_01-en_de.pdf?fileId=db3a304412b407950112b42fa08c4ca0 Description: DIODE MODULE GP 2000V 260A
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ND261N20KHPSA1 Infineon Technologies ND261N.pdf Description: DIODE GP 2KV 260A BG-PB50ND-1
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ITS42K5DLDFXUMA1 ITS42K5DLDFXUMA1 Infineon Technologies Infineon-ITS42K5D-LD-F-DS-v01_00-EN.pdf?fileId=5546d4624e24005f014e5300f0d5546a Description: IC PWR SWITCH P-CHAN 1:1 TSON10
Packaging: Cut Tape (CT)
Package / Case: 10-TFDFN Exposed Pad
Output Type: P-Channel
Mounting Type: Surface Mount, Wettable Flank
Number of Outputs: 2
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: High Side
Rds On (Typ): 2.5Ohm
Input Type: Non-Inverting
Voltage - Load: 4.5V ~ 42V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 250mA
Ratio - Input:Output: 1:1
Supplier Device Package: PG-TSON-10-2
Fault Protection: Over Temperature, UVLO
Part Status: Not For New Designs
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TLE9877QTW40XUMA1 TLE9877QTW40XUMA1 Infineon Technologies Infineon-TLE9877QTW40-DataSheet-v01_00-EN.pdf?fileId=5546d46274dd77260174e8c7597b349c Description: IC MCU 32BIT 64KB FLASH 48TQFP
Packaging: Tape & Reel (TR)
Package / Case: 48-TQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 40MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 6K x 8
Operating Temperature: -40°C ~ 175°C (TJ)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 4K x 8
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 5x10b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 5.5V ~ 27V
Connectivity: LINbus, SPI, SSC, UART/USART
Peripherals: Brown-out Detect/Reset, DMA, POR, PWM, WDT
Supplier Device Package: 48-TQFP (7x7)
Grade: Automotive
Part Status: Active
Number of I/O: 10
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
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TLE9012AQUXUMA1 TLE9012AQUXUMA1 Infineon Technologies Infineon-Semiconductor_solutions_for_hybrid_electric_and_electric_cars-ABR-v01_00-EN.pdf?fileId=5546d46269e1c019016a4a76250c4ab4 Description: IC BATT BALANCER 12CELL
Packaging: Cut Tape (CT)
Number of Cells: 12
Function: Battery Balancer
Interface: UART
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IR3742MTRPBF IR3742MTRPBF Infineon Technologies ir3742.pdf?fileId=5546d462533600a4015355d130ac1798 Description: IC HALF BRIDGE DRIVER 20A 17QFN
Features: Bootstrap Circuit, Status Flag
Packaging: Tape & Reel (TR)
Package / Case: 17-PowerVQFN
Mounting Type: Surface Mount
Interface: PWM
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Half Bridge
Voltage - Supply: 4.5V ~ 7.5V
Rds On (Typ): 4mOhm LS, 8mOhm HS
Applications: Synchronous Buck Converters
Current - Output / Channel: 20A
Technology: Power MOSFET
Voltage - Load: 1V ~ 21V
Supplier Device Package: 17-PQFN (5x6)
Fault Protection: Current Limiting, Over Temperature, UVLO
Load Type: Inductive
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IPD12CN10N IPD12CN10N Infineon Technologies Infineon-IPP12CN10N-DS-v01_08-en.pdf?fileId=db3a304412b407950112b42c236e467c Description: N-CHANNEL POWER MOSFET
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IPP12CN10LG IPP12CN10LG Infineon Technologies INFNS16594-1.pdf?t.download=true&u=5oefqw Description: POWER FIELD-EFFECT TRANSISTOR, 6
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TLE9012AQUXUMA1 TLE9012AQUXUMA1 Infineon Technologies Infineon-Semiconductor_solutions_for_hybrid_electric_and_electric_cars-ABR-v01_00-EN.pdf?fileId=5546d46269e1c019016a4a76250c4ab4 Description: IC BATT BALANCER 12CELL
Packaging: Tape & Reel (TR)
Number of Cells: 12
Function: Battery Balancer
Interface: UART
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IPTC014N08NM5ATMA1 IPTC014N08NM5ATMA1 Infineon Technologies Infineon-IPTC014N08NM5-DataSheet-v02_00-EN.pdf?fileId=5546d46277921c320177a519d1c32535 Description: MOSFET N-CH 80V 37A/330A HDSOP
Packaging: Tape & Reel (TR)
Package / Case: 16-PowerSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 37A (Ta), 330A (Tc)
Rds On (Max) @ Id, Vgs: 1.4mOhm @ 100A, 10V
Power Dissipation (Max): 3.8W (Ta), 300W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 230µA
Supplier Device Package: PG-HDSOP-16-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 180 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13000 pF @ 40 V
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IPTC014N08NM5ATMA1 IPTC014N08NM5ATMA1 Infineon Technologies Infineon-IPTC014N08NM5-DataSheet-v02_00-EN.pdf?fileId=5546d46277921c320177a519d1c32535 Description: MOSFET N-CH 80V 37A/330A HDSOP
Packaging: Cut Tape (CT)
Package / Case: 16-PowerSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 37A (Ta), 330A (Tc)
Rds On (Max) @ Id, Vgs: 1.4mOhm @ 100A, 10V
Power Dissipation (Max): 3.8W (Ta), 300W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 230µA
Supplier Device Package: PG-HDSOP-16-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 180 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13000 pF @ 40 V
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IPB60R299CPAATMA1 IPB60R299CPAATMA1 Infineon Technologies INFN-S-A0003614947-1.pdf?t.download=true&u=5oefqw Description: MOSFET N-CH 600V 11A TO263-3
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 299mOhm @ 6.6A, 10V
Power Dissipation (Max): 96W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 440µA
Supplier Device Package: PG-TO263-3-2
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 100 V
Qualification: AEC-Q101
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SKW04N120FKSA1 Infineon Technologies Description: IGBT
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PBL38620/2SOA PBL38620/2SOA Infineon Technologies PBL38620,2 v2.pdf Description: IC TELECOM INTERFACE PDSO-24
Packaging: Bulk
Package / Case: 24-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Function: Subscriber Line Interface Concept (SLIC)
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 5V
Current - Supply: 2.8mA
Supplier Device Package: PG-DSO-24-8
Number of Circuits: 1
Power (Watts): 290 mW
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BAR6305WH6327XTSA1 BAR6305WH6327XTSA1 Infineon Technologies INFNS15694-1.pdf?t.download=true&u=5oefqw Description: RF DIODE PIN 50V 250MW PG-SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Diode Type: PIN - 1 Pair Common Cathode
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 0.3pF @ 5V, 1MHz
Resistance @ If, F: 1Ohm @ 10mA, 100MHz
Voltage - Peak Reverse (Max): 50V
Supplier Device Package: PG-SOT23
Part Status: Active
Current - Max: 100 mA
Power Dissipation (Max): 250 mW
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BAR6702VH6327XTSA1 BAR6702VH6327XTSA1 Infineon Technologies Infineon-BAR67-02V-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c7e7124d1017efcc0e8f30749 Description: RF DIODE PIN 150V 250MW SC79-2
Packaging: Tape & Reel (TR)
Package / Case: SC-79, SOD-523
Diode Type: PIN - Single
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 0.55pF @ 5V, 1MHz
Resistance @ If, F: 1Ohm @ 10mA, 100MHz
Voltage - Peak Reverse (Max): 150V
Supplier Device Package: PG-SC79-2
Part Status: Active
Current - Max: 200 mA
Power Dissipation (Max): 250 mW
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BAR6305E6327HTSA1 BAR6305E6327HTSA1 Infineon Technologies INFNS15694-1.pdf?t.download=true&u=5oefqw Description: RF DIODE PIN 50V 250MW PG-SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Diode Type: PIN - 1 Pair Common Cathode
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 0.3pF @ 5V, 1MHz
Resistance @ If, F: 1Ohm @ 10mA, 100MHz
Voltage - Peak Reverse (Max): 50V
Supplier Device Package: PG-SOT23
Part Status: Active
Current - Max: 100 mA
Power Dissipation (Max): 250 mW
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BAR6704E6327HTSA1 BAR6704E6327HTSA1 Infineon Technologies fundamentals-of-power-semiconductors Description: RF DIODE PIN 150V 250MW PG-SOT23
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Diode Type: PIN - 1 Pair Series Connection
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 0.55pF @ 5V, 1MHz
Resistance @ If, F: 1Ohm @ 10mA, 100MHz
Voltage - Peak Reverse (Max): 150V
Supplier Device Package: PG-SOT23
Current - Max: 200 mA
Power Dissipation (Max): 250 mW
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BGA9C1MN9E6327XTSA1 BGA9C1MN9E6327XTSA1 Infineon Technologies Infineon-BGA9C1MN9-DataSheet-v02_00-EN.pdf?fileId=5546d46278d64ffd0178f97cdd580567 Description: IC RF AMP 5G 4.4GHZ-5GHZ TSNP9-6
Packaging: Tape & Reel (TR)
Package / Case: 9-XFLGA
Mounting Type: Surface Mount
Frequency: 4.4GHz ~ 5GHz
RF Type: 5G
Voltage - Supply: 1.1V ~ 2V
Gain: 20.5dB
Current - Supply: 5.6mA
Noise Figure: 1dB
P1dB: 8dBm
Test Frequency: 4.9GHz
Supplier Device Package: PG-TSNP-9-6
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BGA9C1MN9E6327XTSA1 BGA9C1MN9E6327XTSA1 Infineon Technologies Infineon-BGA9C1MN9-DataSheet-v02_00-EN.pdf?fileId=5546d46278d64ffd0178f97cdd580567 Description: IC RF AMP 5G 4.4GHZ-5GHZ TSNP9-6
Packaging: Cut Tape (CT)
Package / Case: 9-XFLGA
Mounting Type: Surface Mount
Frequency: 4.4GHz ~ 5GHz
RF Type: 5G
Voltage - Supply: 1.1V ~ 2V
Gain: 20.5dB
Current - Supply: 5.6mA
Noise Figure: 1dB
P1dB: 8dBm
Test Frequency: 4.9GHz
Supplier Device Package: PG-TSNP-9-6
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BGA9V1MN9E6327XTSA1 BGA9V1MN9E6327XTSA1 Infineon Technologies Infineon-BGA9V1MN9-DataSheet-v02_00-EN.pdf?fileId=5546d46278d64ffd0178f97cd4590564 Description: IC AMP 4G/5G 3.3-4.2GHZ TSNP9-6
Packaging: Tape & Reel (TR)
Package / Case: 9-XFLGA
Mounting Type: Surface Mount
Frequency: 3.3GHz ~ 4.2GHz
RF Type: 4G, 5G
Voltage - Supply: 1.1V ~ 2V
Gain: 22.5dB
Current - Supply: 5.8mA
Noise Figure: 0.75dB
P1dB: 7dbm
Test Frequency: 3.8GHz
Supplier Device Package: PG-TSNP-9-6
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BGA9V1MN9E6327XTSA1 BGA9V1MN9E6327XTSA1 Infineon Technologies Infineon-BGA9V1MN9-DataSheet-v02_00-EN.pdf?fileId=5546d46278d64ffd0178f97cd4590564 Description: IC AMP 4G/5G 3.3-4.2GHZ TSNP9-6
Packaging: Cut Tape (CT)
Package / Case: 9-XFLGA
Mounting Type: Surface Mount
Frequency: 3.3GHz ~ 4.2GHz
RF Type: 4G, 5G
Voltage - Supply: 1.1V ~ 2V
Gain: 22.5dB
Current - Supply: 5.8mA
Noise Figure: 0.75dB
P1dB: 7dbm
Test Frequency: 3.8GHz
Supplier Device Package: PG-TSNP-9-6
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BGA 915N7 E6327 BGA 915N7 E6327 Infineon Technologies Part_Number_Guide_Web.pdf Description: IC RF AMP GPS 1575.42MHZ TSNP7-6
Packaging: Cut Tape (CT)
Package / Case: 6-XFDFN Exposed Pad
Mounting Type: Surface Mount
Frequency: 1575.42MHz
RF Type: GPS
Voltage - Supply: 1.5V ~ 3.6V
Gain: 15.5dB
Current - Supply: 4.4mA
Noise Figure: 0.7dB
P1dB: -5dBm
Test Frequency: 1575.42MHz
Supplier Device Package: PG-TSNP-7-6
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F475R07W2H3B51BOMA1 Infineon Technologies INFN-S-A0000110237-1.pdf?t.download=true&u=5oefqw Description: IGBT, 75A, 650V, N-CHANNEL
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BAT1707E6327HTSA1 BAT1707E6327HTSA1 Infineon Technologies Infineon-BAT17-07-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c7e7124d1017efcca5b420773 Description: DIODE SCHOTTKY 4V 150MW SOT143-4
Packaging: Tape & Reel (TR)
Package / Case: TO-253-4, TO-253AA
Diode Type: Schottky - 2 Independent
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 0.75pF @ 0V, 1MHz
Resistance @ If, F: 15Ohm @ 5mA, 10kHz
Voltage - Peak Reverse (Max): 4V
Supplier Device Package: PG-SOT-143-3D
Part Status: Active
Current - Max: 130 mA
Power Dissipation (Max): 150 mW
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3000+0.21 EUR
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BAT5405WH6327XTSA1 BAT5405WH6327XTSA1 Infineon Technologies INFNS15399-1.pdf?t.download=true&u=5oefqw Description: DIODE ARR SCHOT 30V 200MA SOT323
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 5 ns
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 200mA (DC)
Supplier Device Package: PG-SOT323
Operating Temperature - Junction: 150°C (Max)
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 100 mA
Current - Reverse Leakage @ Vr: 2 µA @ 25 V
Qualification: AEC-Q101
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9000+0.073 EUR
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IPG20N04S409ATMA1 IPG20N04S409ATMA1 Infineon Technologies INFNS15593-1.pdf?t.download=true&u=5oefqw Description: MOSFET N-CHANNEL_30/40V
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IPG20N04S409ATMA1 IPG20N04S409ATMA1 Infineon Technologies INFNS15593-1.pdf?t.download=true&u=5oefqw Description: MOSFET N-CHANNEL_30/40V
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BSC0925NDATMA1 BSC0925NDATMA1 Infineon Technologies Infineon-BSC0925ND-DS-v02_00-en.pdf?fileId=db3a304336ca04c90136cec562a24914 Description: MOSFET 2N-CH 30V 15A TISON8
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.5W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 15A
Input Capacitance (Ciss) (Max) @ Vds: 1157pF @ 15V
Rds On (Max) @ Id, Vgs: 5mOhm @ 20A, 10V
Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TISON-8
Part Status: Active
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XMC1301-T038F0032AAXUMA1 XMC1301-T038F0032AAXUMA1 Infineon Technologies INFN-S-A0003614666-1.pdf?t.download=true&u=5oefqw Description: 32-BIT MCU XMC1000 ARM CORTEX-M0
Packaging: Bulk
Package / Case: 38-TFSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Speed: 32MHz
Program Memory Size: 32KB (32K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: A/D 16x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V
Connectivity: I²C, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, I²S, POR, PWM, WDT
Supplier Device Package: PG-TSSOP-38-9
Part Status: Active
Number of I/O: 26
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TLE72722EXUMA1 Infineon-TLE7272-2-DS-v01_00-EN.pdf?fileId=5546d46259d9a4bf0159f9d6e8763ee2
TLE72722EXUMA1
Hersteller: Infineon Technologies
Description: IC REG LINEAR 5V PG-SSOP-14-EP
Packaging: Cut Tape (CT)
Package / Case: 14-LSSOP (0.154", 3.90mm Width) Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 150°C
Output Configuration: Positive
Current - Quiescent (Iq): 30 µA
Voltage - Input (Max): 42V
Number of Regulators: 1
Supplier Device Package: PG-SSOP-14-EP
Voltage - Output (Min/Fixed): 5V
Control Features: Enable, Reset
Grade: Automotive
Part Status: Active
PSRR: 60dB (100Hz)
Voltage Dropout (Max): 0.5V @ 200mA
Protection Features: Over Current, Over Temperature, Short Circuit
Current - Supply (Max): 40 µA
Qualification: AEC-Q100
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5+4.08 EUR
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TLE82422LXUMA2 Infineon-TLE8242_2-DS-v01_00-en.pdf?fileId=db3a3043271faefd012743c4b3380fdd
TLE82422LXUMA2
Hersteller: Infineon Technologies
Description: IC CURRENT SOURCE 64LQFP
Packaging: Tape & Reel (TR)
Package / Case: 64-LQFP
Sensing Method: Low-Side
Mounting Type: Surface Mount
Function: Current Source
Voltage - Input: 5.5V ~ 42V
Operating Temperature: -40°C ~ 150°C
Supplier Device Package: PG-LQFP-64-4
Part Status: Active
auf Bestellung 1900 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1900+17.95 EUR
Mindestbestellmenge: 1900
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PEB4265TV1.1GD INTL-S-A0006019977-1.pdf?t.download=true&u=5oefqw
Hersteller: Infineon Technologies
Description: DUSLIC DUAL CHANNEL SLIC
Packaging: Bulk
auf Bestellung 18400 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
64+7.63 EUR
Mindestbestellmenge: 64
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BAT5402LRHE6327XTSA1 INFNS15399-1.pdf?t.download=true&u=5oefqw
BAT5402LRHE6327XTSA1
Hersteller: Infineon Technologies
Description: DIODE SCHOTT 30V 200MA TSLP-2-7
Packaging: Tape & Reel (TR)
Package / Case: SOD-882
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 5 ns
Technology: Schottky
Capacitance @ Vr, F: 10pF @ 1V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: PG-TSLP-2-7
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 100 mA
Current - Reverse Leakage @ Vr: 2 µA @ 25 V
Produkt ist nicht verfügbar
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MB4213PF-G-BND-JN-ERE1
Hersteller: Infineon Technologies
Description: IC SUPERVISOR REG DC/DC 14SOP
Packaging: Tape & Reel (TR)
Part Status: Obsolete
Produkt ist nicht verfügbar
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63-8035
63-8035
Hersteller: Infineon Technologies
Description: IGBT CHIP
Produkt ist nicht verfügbar
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IPB200N15N3 Infineon-IPB200N15N3%20G-DS-v02_07-EN.pdf?fileId=5546d4624fb7fef2014ff59230602dbb
IPB200N15N3
Hersteller: Infineon Technologies
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ 50A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 4V @ 90µA
Supplier Device Package: PG-TO263-3-2
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1820 pF @ 75 V
Produkt ist nicht verfügbar
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IPB200N15N3G INFN-S-A0001300200-1.pdf?t.download=true&u=5oefqw
IPB200N15N3G
Hersteller: Infineon Technologies
Description: IPB200N15 - 12V-300V N-CHANNEL P
Produkt ist nicht verfügbar
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IPI200N15N3 G IPD200N15N3_Rev2.02.pdf?folderId=db3a304313b8b5a60113cee7c66a02d6&fileId=db3a304319c6f18c0119cd1cc23279be
IPI200N15N3 G
Hersteller: Infineon Technologies
Description: MOSFET N-CH 150V 50A TO262-3
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ 50A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 4V @ 90µA
Supplier Device Package: PG-TO262-3
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1820 pF @ 75 V
Produkt ist nicht verfügbar
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BTS5016-1EKB INFNS19104-1.pdf?t.download=true&u=5oefqw
Hersteller: Infineon Technologies
Description: BTS5016 - PROFET - SMART HIGH SI
Features: Slew Rate Controlled
Packaging: Bulk
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 16mOhm
Input Type: Non-Inverting
Voltage - Load: 5V ~ 28V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 8A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-DSO-14-30
Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, Over Voltage, Short Circuit
Produkt ist nicht verfügbar
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BTS50161EKBXUMA1 Infineon-BTS5016-1EKB-DS-v02_00-EN.pdf?fileId=5546d4625a888733015aa41a7a3d1131
BTS50161EKBXUMA1
Hersteller: Infineon Technologies
Description: IC PWR SWITCH N-CHAN 1:1 DSO-14
Packaging: Bulk
Package / Case: 14-SOIC (0.154", 3.90mm Width) Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 16mOhm
Input Type: Non-Inverting
Voltage - Load: 5V ~ 28V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 8A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-DSO-14-47-EP
Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, Over Voltage
auf Bestellung 94116 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
213+2.18 EUR
Mindestbestellmenge: 213
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TLE9872QXA40XUMA1 Infineon-TLE9872QXA40-DataSheet-v01_00-EN.pdf?fileId=5546d46274dd77260174e8c790ce34a8
Hersteller: Infineon Technologies
Description: EMBEDDED POWER
Packaging: Cut Tape (CT)
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: LINbus, SPI, SSC, UART/USART
RAM Size: 8K x 8
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 5.5V ~ 27V
Controller Series: TLE987x
Program Memory Type: FLASH (256kB)
Core Processor: ARM® Cortex®-M3
Supplier Device Package: PG-VQFN-48-29
Grade: Automotive
Part Status: Active
Number of I/O: 10
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
auf Bestellung 4900 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+11.7 EUR
10+9.02 EUR
25+8.35 EUR
100+7.61 EUR
250+7.26 EUR
500+7.05 EUR
1000+6.88 EUR
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BSM50GX120DN2BOSA1
Hersteller: Infineon Technologies
Description: IGBT MODULE 2 LOW PWR ECONO2-2
Packaging: Tray
Produkt ist nicht verfügbar
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BTS781GP
Hersteller: Infineon Technologies
Description: BRUSH DC MOTOR CONTROLLER
Produkt ist nicht verfügbar
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IPW65R660CFDFKSA1 IPW65R660CFD_2.41.pdf?folderId=db3a3043163797a6011637d4bae7003b&fileId=db3a30432f29829e012f2efe7ac539b4
IPW65R660CFDFKSA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 700V 6A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 660mOhm @ 2.1A, 10V
Power Dissipation (Max): 62.5W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 200µA
Supplier Device Package: PG-TO247-3-1
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 615 pF @ 100 V
auf Bestellung 8160 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
302+1.68 EUR
Mindestbestellmenge: 302
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IM818MCCXKMA1 Infineon-IM818-MCC-DS-v02_01-EN.pdf?fileId=5546d46265f064ff0165f9e91e3c2e9e
IM818MCCXKMA1
Hersteller: Infineon Technologies
Description: IGBT MODULE 1200V 16A 24PWRDIP
Packaging: Tube
Package / Case: 24-PowerDIP Module (1.205", 30.60mm)
Mounting Type: Through Hole
Type: IGBT
Configuration: 3 Phase Inverter
Voltage - Isolation: 2500Vrms
Part Status: Active
Current: 16 A
Voltage: 1.2 kV
auf Bestellung 614 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+59.59 EUR
14+42.53 EUR
112+39.09 EUR
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TDA21470AUMA1 LatestGeneration_IntegratedPwrStages_25V_PB_v01_3-21-16.pdf
TDA21470AUMA1
Hersteller: Infineon Technologies
Description: IC INTEG PWR STAGES IQFN-39
Packaging: Tape & Reel (TR)
Package / Case: 39-PowerVFQFN
Mounting Type: Surface Mount
Type: Integrated Power Stages
Supplier Device Package: PG-IQFN-39
Part Status: Not For New Designs
DigiKey Programmable: Not Verified
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5000+3.7 EUR
Mindestbestellmenge: 5000
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TDA21470AUMA1 LatestGeneration_IntegratedPwrStages_25V_PB_v01_3-21-16.pdf
TDA21470AUMA1
Hersteller: Infineon Technologies
Description: IC INTEG PWR STAGES IQFN-39
Packaging: Cut Tape (CT)
Package / Case: 39-PowerVFQFN
Mounting Type: Surface Mount
Type: Integrated Power Stages
Supplier Device Package: PG-IQFN-39
Part Status: Not For New Designs
DigiKey Programmable: Not Verified
auf Bestellung 9989 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+6.85 EUR
10+5.2 EUR
25+4.79 EUR
100+4.34 EUR
250+4.12 EUR
500+3.99 EUR
1000+3.88 EUR
2500+3.77 EUR
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EVALPFC5KIKWWR5SYSTOBO1 Infineon-EVAL-PFC5KIKWWR5SYS-UserManual-v01_00-EN.pdf?fileId=5546d46278d64ffd0178f986f0b708d4
EVALPFC5KIKWWR5SYSTOBO1
Hersteller: Infineon Technologies
Description: EVAL BOARD FOR IKW40N65WR5
Packaging: Bulk
Function: Power Factor Correction
Type: Power Management
Contents: Board(s)
Utilized IC / Part: IKW40N65WR5, IDW60C65D1, 1ED44175
Supplied Contents: Board(s)
Primary Attributes: 180 ~ 264VAC Input
Embedded: No
Part Status: Active
Produkt ist nicht verfügbar
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IPA80R460CEXKSA2 Infineon-IPA80R460CE-DS-v02_00-EN.pdf?fileId=5546d46249be182c0149c79199ef1e55
IPA80R460CEXKSA2
Hersteller: Infineon Technologies
Description: MOSFET N-CH 800V 10.8A TO220
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10.8A (Ta)
Rds On (Max) @ Id, Vgs: 460mOhm @ 7.1A, 10V
Power Dissipation (Max): 34W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 680µA
Supplier Device Package: PG-TO220-3-31
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 100 V
auf Bestellung 500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+4.44 EUR
50+2.41 EUR
100+2.21 EUR
500+1.83 EUR
Mindestbestellmenge: 4
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BAS7004E6433HTMA1 INFNS30154-1.pdf?t.download=true&u=5oefqw
BAS7004E6433HTMA1
Hersteller: Infineon Technologies
Description: DIODE ARRAY SCHOT 70V 70MA SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 100 ps
Technology: Schottky
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 70mA (DC)
Supplier Device Package: PG-SOT23
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 70 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 15 mA
Current - Reverse Leakage @ Vr: 100 nA @ 50 V
Produkt ist nicht verfügbar
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IPD60R600PFD7SAUMA1 Infineon-IPD60R600PFD7S-DataSheet-v02_00-EN.pdf?fileId=5546d4626eab8fbf016ed61c45f839e9
IPD60R600PFD7SAUMA1
Hersteller: Infineon Technologies
Description: CONSUMER PG-TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 1.7A, 10V
Power Dissipation (Max): 31W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 80µA
Supplier Device Package: PG-TO252-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 8.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 344 pF @ 400 V
Produkt ist nicht verfügbar
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IPD60R600PFD7SAUMA1 Infineon-IPD60R600PFD7S-DataSheet-v02_00-EN.pdf?fileId=5546d4626eab8fbf016ed61c45f839e9
IPD60R600PFD7SAUMA1
Hersteller: Infineon Technologies
Description: CONSUMER PG-TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 1.7A, 10V
Power Dissipation (Max): 31W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 80µA
Supplier Device Package: PG-TO252-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 8.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 344 pF @ 400 V
auf Bestellung 4694 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
8+2.32 EUR
12+1.47 EUR
100+0.98 EUR
500+0.77 EUR
1000+0.7 EUR
Mindestbestellmenge: 8
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PX3746DDQSM1383XUMA1
Hersteller: Infineon Technologies
Description: LED PX3746DDQSM1383XUMA1
Packaging: Tray
Part Status: Obsolete
Produkt ist nicht verfügbar
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S25FL064P0XBHV020 Infineon-S25FL064P_64-Mbit_3.0_V_SPI_Flash_Memory-DataSheet-v11_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed4dcb1535c&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
S25FL064P0XBHV020
Hersteller: Infineon Technologies
Description: IC FLASH 64MBIT 104MHZ 24BGA
auf Bestellung 338 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
26+2.36 EUR
Mindestbestellmenge: 26
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IAUT165N08S5N029ATMA1 Infineon-IAUT165N08S5N029-DS-v01_00-EN.pdf?fileId=5546d46258fc0bc10158fda2c4bd0569
IAUT165N08S5N029ATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 80V 165A 8HSOF
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 165A (Tc)
Rds On (Max) @ Id, Vgs: 2.9mOhm @ 80A, 10V
Power Dissipation (Max): 167W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 108µA
Supplier Device Package: PG-HSOF-8-1
Grade: Automotive
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6370 pF @ 40 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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SAF-XC164LM-16F20F BA XC164LM.pdf
SAF-XC164LM-16F20F BA
Hersteller: Infineon Technologies
Description: IC MCU 16BIT 128KB FLASH 64LQFP
Packaging: Tape & Reel (TR)
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Speed: 20MHz
Program Memory Size: 128KB (128K x 8)
RAM Size: 8K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: C166SV2
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 2.35V ~ 2.7V
Connectivity: SPI, UART/USART
Peripherals: PWM, WDT
Supplier Device Package: PG-LQFP-64-4
Number of I/O: 47
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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SAF-XC164LM-16F40F BA XC164LM.pdf
SAF-XC164LM-16F40F BA
Hersteller: Infineon Technologies
Description: IC MCU 16BIT 128KB FLASH 64LQFP
Produkt ist nicht verfügbar
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BTS5020-1EKA INFNS29317-1.pdf?t.download=true&u=5oefqw
Hersteller: Infineon Technologies
Description: BTS5020 - PROFET - SMART HIGH SI
Features: Slew Rate Controlled
Packaging: Bulk
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 20mOhm
Input Type: Non-Inverting
Voltage - Load: 5V ~ 28V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 6.5A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-DSO-14-30
Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, Over Voltage, Short Circuit, UVLO
Part Status: Active
Produkt ist nicht verfügbar
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IRF8714TRPBF-1 IRF8714PbF-1_11-22-13.pdf
IRF8714TRPBF-1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 30V 14A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Ta)
Rds On (Max) @ Id, Vgs: 8.7mOhm @ 14A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 2.35V @ 25µA
Supplier Device Package: 8-SOIC
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1020 pF @ 15 V
Produkt ist nicht verfügbar
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DD261N20KHPSA1 Infineon-DD261N-DS-v03_01-en_de.pdf?fileId=db3a304412b407950112b42fa08c4ca0
DD261N20KHPSA1
Hersteller: Infineon Technologies
Description: DIODE MODULE GP 2000V 260A
Produkt ist nicht verfügbar
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ND261N20KHPSA1 ND261N.pdf
Hersteller: Infineon Technologies
Description: DIODE GP 2KV 260A BG-PB50ND-1
Produkt ist nicht verfügbar
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ITS42K5DLDFXUMA1 Infineon-ITS42K5D-LD-F-DS-v01_00-EN.pdf?fileId=5546d4624e24005f014e5300f0d5546a
ITS42K5DLDFXUMA1
Hersteller: Infineon Technologies
Description: IC PWR SWITCH P-CHAN 1:1 TSON10
Packaging: Cut Tape (CT)
Package / Case: 10-TFDFN Exposed Pad
Output Type: P-Channel
Mounting Type: Surface Mount, Wettable Flank
Number of Outputs: 2
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: High Side
Rds On (Typ): 2.5Ohm
Input Type: Non-Inverting
Voltage - Load: 4.5V ~ 42V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 250mA
Ratio - Input:Output: 1:1
Supplier Device Package: PG-TSON-10-2
Fault Protection: Over Temperature, UVLO
Part Status: Not For New Designs
auf Bestellung 125425 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
8+2.46 EUR
10+1.8 EUR
25+1.64 EUR
100+1.46 EUR
250+1.37 EUR
500+1.32 EUR
1000+1.27 EUR
2500+1.23 EUR
Mindestbestellmenge: 8
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TLE9877QTW40XUMA1 Infineon-TLE9877QTW40-DataSheet-v01_00-EN.pdf?fileId=5546d46274dd77260174e8c7597b349c
TLE9877QTW40XUMA1
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 64KB FLASH 48TQFP
Packaging: Tape & Reel (TR)
Package / Case: 48-TQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 40MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 6K x 8
Operating Temperature: -40°C ~ 175°C (TJ)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 4K x 8
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 5x10b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 5.5V ~ 27V
Connectivity: LINbus, SPI, SSC, UART/USART
Peripherals: Brown-out Detect/Reset, DMA, POR, PWM, WDT
Supplier Device Package: 48-TQFP (7x7)
Grade: Automotive
Part Status: Active
Number of I/O: 10
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2500+5.73 EUR
Mindestbestellmenge: 2500
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TLE9012AQUXUMA1 Infineon-Semiconductor_solutions_for_hybrid_electric_and_electric_cars-ABR-v01_00-EN.pdf?fileId=5546d46269e1c019016a4a76250c4ab4
TLE9012AQUXUMA1
Hersteller: Infineon Technologies
Description: IC BATT BALANCER 12CELL
Packaging: Cut Tape (CT)
Number of Cells: 12
Function: Battery Balancer
Interface: UART
Produkt ist nicht verfügbar
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IR3742MTRPBF ir3742.pdf?fileId=5546d462533600a4015355d130ac1798
IR3742MTRPBF
Hersteller: Infineon Technologies
Description: IC HALF BRIDGE DRIVER 20A 17QFN
Features: Bootstrap Circuit, Status Flag
Packaging: Tape & Reel (TR)
Package / Case: 17-PowerVQFN
Mounting Type: Surface Mount
Interface: PWM
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Half Bridge
Voltage - Supply: 4.5V ~ 7.5V
Rds On (Typ): 4mOhm LS, 8mOhm HS
Applications: Synchronous Buck Converters
Current - Output / Channel: 20A
Technology: Power MOSFET
Voltage - Load: 1V ~ 21V
Supplier Device Package: 17-PQFN (5x6)
Fault Protection: Current Limiting, Over Temperature, UVLO
Load Type: Inductive
Produkt ist nicht verfügbar
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IPD12CN10N Infineon-IPP12CN10N-DS-v01_08-en.pdf?fileId=db3a304412b407950112b42c236e467c
IPD12CN10N
Hersteller: Infineon Technologies
Description: N-CHANNEL POWER MOSFET
auf Bestellung 3175 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
279+1.81 EUR
Mindestbestellmenge: 279
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IPP12CN10LG INFNS16594-1.pdf?t.download=true&u=5oefqw
IPP12CN10LG
Hersteller: Infineon Technologies
Description: POWER FIELD-EFFECT TRANSISTOR, 6
auf Bestellung 1380 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
512+0.95 EUR
Mindestbestellmenge: 512
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TLE9012AQUXUMA1 Infineon-Semiconductor_solutions_for_hybrid_electric_and_electric_cars-ABR-v01_00-EN.pdf?fileId=5546d46269e1c019016a4a76250c4ab4
TLE9012AQUXUMA1
Hersteller: Infineon Technologies
Description: IC BATT BALANCER 12CELL
Packaging: Tape & Reel (TR)
Number of Cells: 12
Function: Battery Balancer
Interface: UART
Produkt ist nicht verfügbar
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IPTC014N08NM5ATMA1 Infineon-IPTC014N08NM5-DataSheet-v02_00-EN.pdf?fileId=5546d46277921c320177a519d1c32535
IPTC014N08NM5ATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 80V 37A/330A HDSOP
Packaging: Tape & Reel (TR)
Package / Case: 16-PowerSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 37A (Ta), 330A (Tc)
Rds On (Max) @ Id, Vgs: 1.4mOhm @ 100A, 10V
Power Dissipation (Max): 3.8W (Ta), 300W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 230µA
Supplier Device Package: PG-HDSOP-16-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 180 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13000 pF @ 40 V
auf Bestellung 1800 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1800+4.57 EUR
Mindestbestellmenge: 1800
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IPTC014N08NM5ATMA1 Infineon-IPTC014N08NM5-DataSheet-v02_00-EN.pdf?fileId=5546d46277921c320177a519d1c32535
IPTC014N08NM5ATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 80V 37A/330A HDSOP
Packaging: Cut Tape (CT)
Package / Case: 16-PowerSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 37A (Ta), 330A (Tc)
Rds On (Max) @ Id, Vgs: 1.4mOhm @ 100A, 10V
Power Dissipation (Max): 3.8W (Ta), 300W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 230µA
Supplier Device Package: PG-HDSOP-16-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 180 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13000 pF @ 40 V
auf Bestellung 3336 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+9.03 EUR
10+6.75 EUR
100+5.48 EUR
500+5.31 EUR
Mindestbestellmenge: 2
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IPB60R299CPAATMA1 INFN-S-A0003614947-1.pdf?t.download=true&u=5oefqw
IPB60R299CPAATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 600V 11A TO263-3
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 299mOhm @ 6.6A, 10V
Power Dissipation (Max): 96W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 440µA
Supplier Device Package: PG-TO263-3-2
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 100 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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SKW04N120FKSA1
Hersteller: Infineon Technologies
Description: IGBT
Produkt ist nicht verfügbar
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PBL38620/2SOA PBL38620,2 v2.pdf
PBL38620/2SOA
Hersteller: Infineon Technologies
Description: IC TELECOM INTERFACE PDSO-24
Packaging: Bulk
Package / Case: 24-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Function: Subscriber Line Interface Concept (SLIC)
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 5V
Current - Supply: 2.8mA
Supplier Device Package: PG-DSO-24-8
Number of Circuits: 1
Power (Watts): 290 mW
auf Bestellung 1510 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
76+6.66 EUR
Mindestbestellmenge: 76
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BAR6305WH6327XTSA1 INFNS15694-1.pdf?t.download=true&u=5oefqw
BAR6305WH6327XTSA1
Hersteller: Infineon Technologies
Description: RF DIODE PIN 50V 250MW PG-SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Diode Type: PIN - 1 Pair Common Cathode
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 0.3pF @ 5V, 1MHz
Resistance @ If, F: 1Ohm @ 10mA, 100MHz
Voltage - Peak Reverse (Max): 50V
Supplier Device Package: PG-SOT23
Part Status: Active
Current - Max: 100 mA
Power Dissipation (Max): 250 mW
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.1 EUR
6000+0.096 EUR
Mindestbestellmenge: 3000
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BAR6702VH6327XTSA1 Infineon-BAR67-02V-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c7e7124d1017efcc0e8f30749
BAR6702VH6327XTSA1
Hersteller: Infineon Technologies
Description: RF DIODE PIN 150V 250MW SC79-2
Packaging: Tape & Reel (TR)
Package / Case: SC-79, SOD-523
Diode Type: PIN - Single
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 0.55pF @ 5V, 1MHz
Resistance @ If, F: 1Ohm @ 10mA, 100MHz
Voltage - Peak Reverse (Max): 150V
Supplier Device Package: PG-SC79-2
Part Status: Active
Current - Max: 200 mA
Power Dissipation (Max): 250 mW
auf Bestellung 12000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.16 EUR
Mindestbestellmenge: 3000
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BAR6305E6327HTSA1 INFNS15694-1.pdf?t.download=true&u=5oefqw
BAR6305E6327HTSA1
Hersteller: Infineon Technologies
Description: RF DIODE PIN 50V 250MW PG-SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Diode Type: PIN - 1 Pair Common Cathode
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 0.3pF @ 5V, 1MHz
Resistance @ If, F: 1Ohm @ 10mA, 100MHz
Voltage - Peak Reverse (Max): 50V
Supplier Device Package: PG-SOT23
Part Status: Active
Current - Max: 100 mA
Power Dissipation (Max): 250 mW
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.17 EUR
Mindestbestellmenge: 3000
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BAR6704E6327HTSA1 fundamentals-of-power-semiconductors
BAR6704E6327HTSA1
Hersteller: Infineon Technologies
Description: RF DIODE PIN 150V 250MW PG-SOT23
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Diode Type: PIN - 1 Pair Series Connection
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 0.55pF @ 5V, 1MHz
Resistance @ If, F: 1Ohm @ 10mA, 100MHz
Voltage - Peak Reverse (Max): 150V
Supplier Device Package: PG-SOT23
Current - Max: 200 mA
Power Dissipation (Max): 250 mW
auf Bestellung 440107 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2732+0.16 EUR
Mindestbestellmenge: 2732
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BGA9C1MN9E6327XTSA1 Infineon-BGA9C1MN9-DataSheet-v02_00-EN.pdf?fileId=5546d46278d64ffd0178f97cdd580567
BGA9C1MN9E6327XTSA1
Hersteller: Infineon Technologies
Description: IC RF AMP 5G 4.4GHZ-5GHZ TSNP9-6
Packaging: Tape & Reel (TR)
Package / Case: 9-XFLGA
Mounting Type: Surface Mount
Frequency: 4.4GHz ~ 5GHz
RF Type: 5G
Voltage - Supply: 1.1V ~ 2V
Gain: 20.5dB
Current - Supply: 5.6mA
Noise Figure: 1dB
P1dB: 8dBm
Test Frequency: 4.9GHz
Supplier Device Package: PG-TSNP-9-6
Produkt ist nicht verfügbar
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BGA9C1MN9E6327XTSA1 Infineon-BGA9C1MN9-DataSheet-v02_00-EN.pdf?fileId=5546d46278d64ffd0178f97cdd580567
BGA9C1MN9E6327XTSA1
Hersteller: Infineon Technologies
Description: IC RF AMP 5G 4.4GHZ-5GHZ TSNP9-6
Packaging: Cut Tape (CT)
Package / Case: 9-XFLGA
Mounting Type: Surface Mount
Frequency: 4.4GHz ~ 5GHz
RF Type: 5G
Voltage - Supply: 1.1V ~ 2V
Gain: 20.5dB
Current - Supply: 5.6mA
Noise Figure: 1dB
P1dB: 8dBm
Test Frequency: 4.9GHz
Supplier Device Package: PG-TSNP-9-6
Produkt ist nicht verfügbar
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BGA9V1MN9E6327XTSA1 Infineon-BGA9V1MN9-DataSheet-v02_00-EN.pdf?fileId=5546d46278d64ffd0178f97cd4590564
BGA9V1MN9E6327XTSA1
Hersteller: Infineon Technologies
Description: IC AMP 4G/5G 3.3-4.2GHZ TSNP9-6
Packaging: Tape & Reel (TR)
Package / Case: 9-XFLGA
Mounting Type: Surface Mount
Frequency: 3.3GHz ~ 4.2GHz
RF Type: 4G, 5G
Voltage - Supply: 1.1V ~ 2V
Gain: 22.5dB
Current - Supply: 5.8mA
Noise Figure: 0.75dB
P1dB: 7dbm
Test Frequency: 3.8GHz
Supplier Device Package: PG-TSNP-9-6
auf Bestellung 12000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
12000+0.83 EUR
Mindestbestellmenge: 12000
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BGA9V1MN9E6327XTSA1 Infineon-BGA9V1MN9-DataSheet-v02_00-EN.pdf?fileId=5546d46278d64ffd0178f97cd4590564
BGA9V1MN9E6327XTSA1
Hersteller: Infineon Technologies
Description: IC AMP 4G/5G 3.3-4.2GHZ TSNP9-6
Packaging: Cut Tape (CT)
Package / Case: 9-XFLGA
Mounting Type: Surface Mount
Frequency: 3.3GHz ~ 4.2GHz
RF Type: 4G, 5G
Voltage - Supply: 1.1V ~ 2V
Gain: 22.5dB
Current - Supply: 5.8mA
Noise Figure: 0.75dB
P1dB: 7dbm
Test Frequency: 3.8GHz
Supplier Device Package: PG-TSNP-9-6
auf Bestellung 12000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
10+1.87 EUR
13+1.43 EUR
25+1.28 EUR
100+1.1 EUR
250+1.01 EUR
500+0.94 EUR
1000+0.89 EUR
5000+0.78 EUR
Mindestbestellmenge: 10
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BGA 915N7 E6327 Part_Number_Guide_Web.pdf
BGA 915N7 E6327
Hersteller: Infineon Technologies
Description: IC RF AMP GPS 1575.42MHZ TSNP7-6
Packaging: Cut Tape (CT)
Package / Case: 6-XFDFN Exposed Pad
Mounting Type: Surface Mount
Frequency: 1575.42MHz
RF Type: GPS
Voltage - Supply: 1.5V ~ 3.6V
Gain: 15.5dB
Current - Supply: 4.4mA
Noise Figure: 0.7dB
P1dB: -5dBm
Test Frequency: 1575.42MHz
Supplier Device Package: PG-TSNP-7-6
Produkt ist nicht verfügbar
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F475R07W2H3B51BOMA1 INFN-S-A0000110237-1.pdf?t.download=true&u=5oefqw
Hersteller: Infineon Technologies
Description: IGBT, 75A, 650V, N-CHANNEL
auf Bestellung 180 Stücke:
Lieferzeit 10-14 Tag (e)
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BAT1707E6327HTSA1 Infineon-BAT17-07-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c7e7124d1017efcca5b420773
BAT1707E6327HTSA1
Hersteller: Infineon Technologies
Description: DIODE SCHOTTKY 4V 150MW SOT143-4
Packaging: Tape & Reel (TR)
Package / Case: TO-253-4, TO-253AA
Diode Type: Schottky - 2 Independent
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 0.75pF @ 0V, 1MHz
Resistance @ If, F: 15Ohm @ 5mA, 10kHz
Voltage - Peak Reverse (Max): 4V
Supplier Device Package: PG-SOT-143-3D
Part Status: Active
Current - Max: 130 mA
Power Dissipation (Max): 150 mW
auf Bestellung 9000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.21 EUR
9000+0.2 EUR
Mindestbestellmenge: 3000
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BAT5405WH6327XTSA1 INFNS15399-1.pdf?t.download=true&u=5oefqw
BAT5405WH6327XTSA1
Hersteller: Infineon Technologies
Description: DIODE ARR SCHOT 30V 200MA SOT323
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 5 ns
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 200mA (DC)
Supplier Device Package: PG-SOT323
Operating Temperature - Junction: 150°C (Max)
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 100 mA
Current - Reverse Leakage @ Vr: 2 µA @ 25 V
Qualification: AEC-Q101
auf Bestellung 99000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.086 EUR
6000+0.077 EUR
9000+0.073 EUR
15000+0.068 EUR
21000+0.065 EUR
30000+0.062 EUR
75000+0.061 EUR
Mindestbestellmenge: 3000
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IPG20N04S409ATMA1 INFNS15593-1.pdf?t.download=true&u=5oefqw
IPG20N04S409ATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CHANNEL_30/40V
Produkt ist nicht verfügbar
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IPG20N04S409ATMA1 INFNS15593-1.pdf?t.download=true&u=5oefqw
IPG20N04S409ATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CHANNEL_30/40V
Produkt ist nicht verfügbar
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BSC0925NDATMA1 Infineon-BSC0925ND-DS-v02_00-en.pdf?fileId=db3a304336ca04c90136cec562a24914
BSC0925NDATMA1
Hersteller: Infineon Technologies
Description: MOSFET 2N-CH 30V 15A TISON8
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.5W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 15A
Input Capacitance (Ciss) (Max) @ Vds: 1157pF @ 15V
Rds On (Max) @ Id, Vgs: 5mOhm @ 20A, 10V
Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TISON-8
Part Status: Active
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XMC1301-T038F0032AAXUMA1 INFN-S-A0003614666-1.pdf?t.download=true&u=5oefqw
XMC1301-T038F0032AAXUMA1
Hersteller: Infineon Technologies
Description: 32-BIT MCU XMC1000 ARM CORTEX-M0
Packaging: Bulk
Package / Case: 38-TFSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Speed: 32MHz
Program Memory Size: 32KB (32K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: A/D 16x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V
Connectivity: I²C, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, I²S, POR, PWM, WDT
Supplier Device Package: PG-TSSOP-38-9
Part Status: Active
Number of I/O: 26
Produkt ist nicht verfügbar
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