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ND261N20KHPSA1 Infineon Technologies ND261N.pdf Description: DIODE GP 2KV 260A BG-PB50ND-1
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ITS42K5DLDFXUMA1 ITS42K5DLDFXUMA1 Infineon Technologies Infineon-ITS42K5D-LD-F-DS-v01_00-EN.pdf?fileId=5546d4624e24005f014e5300f0d5546a Description: IC PWR SWITCH P-CHAN 1:1 TSON10
Packaging: Cut Tape (CT)
Package / Case: 10-TFDFN Exposed Pad
Output Type: P-Channel
Mounting Type: Surface Mount, Wettable Flank
Number of Outputs: 2
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: High Side
Rds On (Typ): 2.5Ohm
Input Type: Non-Inverting
Voltage - Load: 4.5V ~ 42V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 250mA
Ratio - Input:Output: 1:1
Supplier Device Package: PG-TSON-10-2
Fault Protection: Over Temperature, UVLO
Part Status: Not For New Designs
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100+1.53 EUR
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500+1.38 EUR
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TLE9877QTW40XUMA1 TLE9877QTW40XUMA1 Infineon Technologies Infineon-TLE9877QTW40-DataSheet-v01_00-EN.pdf?fileId=5546d46274dd77260174e8c7597b349c Description: IC MCU 32BIT 64KB FLASH 48TQFP
Packaging: Tape & Reel (TR)
Package / Case: 48-TQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 40MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 6K x 8
Operating Temperature: -40°C ~ 175°C (TJ)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 4K x 8
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 5x10b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 5.5V ~ 27V
Connectivity: LINbus, SPI, SSC, UART/USART
Peripherals: Brown-out Detect/Reset, DMA, POR, PWM, WDT
Supplier Device Package: 48-TQFP (7x7)
Grade: Automotive
Part Status: Active
Number of I/O: 10
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
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TLE9012AQUXUMA1 TLE9012AQUXUMA1 Infineon Technologies Infineon-Semiconductor_solutions_for_hybrid_electric_and_electric_cars-ABR-v01_00-EN.pdf?fileId=5546d46269e1c019016a4a76250c4ab4 Description: IC BATT BALANCER 12CELL
Packaging: Cut Tape (CT)
Number of Cells: 12
Function: Battery Balancer
Interface: UART
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IR3742MTRPBF IR3742MTRPBF Infineon Technologies ir3742.pdf?fileId=5546d462533600a4015355d130ac1798 Description: IC HALF BRIDGE DRIVER 20A 17QFN
Features: Bootstrap Circuit, Status Flag
Packaging: Tape & Reel (TR)
Package / Case: 17-PowerVQFN
Mounting Type: Surface Mount
Interface: PWM
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Half Bridge
Voltage - Supply: 4.5V ~ 7.5V
Rds On (Typ): 4mOhm LS, 8mOhm HS
Applications: Synchronous Buck Converters
Current - Output / Channel: 20A
Technology: Power MOSFET
Voltage - Load: 1V ~ 21V
Supplier Device Package: 17-PQFN (5x6)
Fault Protection: Current Limiting, Over Temperature, UVLO
Load Type: Inductive
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IPD12CN10N IPD12CN10N Infineon Technologies Infineon-IPP12CN10N-DS-v01_08-en.pdf?fileId=db3a304412b407950112b42c236e467c Description: N-CHANNEL POWER MOSFET
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IPP12CN10LG IPP12CN10LG Infineon Technologies INFNS16594-1.pdf?t.download=true&u=5oefqw Description: POWER FIELD-EFFECT TRANSISTOR, 6
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TLE9012AQUXUMA1 TLE9012AQUXUMA1 Infineon Technologies Infineon-Semiconductor_solutions_for_hybrid_electric_and_electric_cars-ABR-v01_00-EN.pdf?fileId=5546d46269e1c019016a4a76250c4ab4 Description: IC BATT BALANCER 12CELL
Packaging: Tape & Reel (TR)
Number of Cells: 12
Function: Battery Balancer
Interface: UART
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IPTC014N08NM5ATMA1 IPTC014N08NM5ATMA1 Infineon Technologies Infineon-IPTC014N08NM5-DataSheet-v02_00-EN.pdf?fileId=5546d46277921c320177a519d1c32535 Description: MOSFET N-CH 80V 37A/330A HDSOP
Packaging: Tape & Reel (TR)
Package / Case: 16-PowerSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 37A (Ta), 330A (Tc)
Rds On (Max) @ Id, Vgs: 1.4mOhm @ 100A, 10V
Power Dissipation (Max): 3.8W (Ta), 300W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 230µA
Supplier Device Package: PG-HDSOP-16-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 180 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13000 pF @ 40 V
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IPTC014N08NM5ATMA1 IPTC014N08NM5ATMA1 Infineon Technologies Infineon-IPTC014N08NM5-DataSheet-v02_00-EN.pdf?fileId=5546d46277921c320177a519d1c32535 Description: MOSFET N-CH 80V 37A/330A HDSOP
Packaging: Cut Tape (CT)
Package / Case: 16-PowerSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 37A (Ta), 330A (Tc)
Rds On (Max) @ Id, Vgs: 1.4mOhm @ 100A, 10V
Power Dissipation (Max): 3.8W (Ta), 300W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 230µA
Supplier Device Package: PG-HDSOP-16-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 180 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13000 pF @ 40 V
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IPB60R299CPAATMA1 IPB60R299CPAATMA1 Infineon Technologies INFN-S-A0003614947-1.pdf?t.download=true&u=5oefqw Description: MOSFET N-CH 600V 11A TO263-3
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 299mOhm @ 6.6A, 10V
Power Dissipation (Max): 96W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 440µA
Supplier Device Package: PG-TO263-3-2
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 100 V
Qualification: AEC-Q101
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SKW04N120FKSA1 Infineon Technologies Description: IGBT
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PBL38620/2SOA PBL38620/2SOA Infineon Technologies PBL38620,2 v2.pdf Description: IC TELECOM INTERFACE PDSO-24
Packaging: Bulk
Package / Case: 24-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Function: Subscriber Line Interface Concept (SLIC)
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 5V
Current - Supply: 2.8mA
Supplier Device Package: PG-DSO-24-8
Number of Circuits: 1
Power (Watts): 290 mW
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BAR6305WH6327XTSA1 BAR6305WH6327XTSA1 Infineon Technologies INFNS15694-1.pdf?t.download=true&u=5oefqw Description: RF DIODE PIN 50V 250MW PG-SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Diode Type: PIN - 1 Pair Common Cathode
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 0.3pF @ 5V, 1MHz
Resistance @ If, F: 1Ohm @ 10mA, 100MHz
Voltage - Peak Reverse (Max): 50V
Supplier Device Package: PG-SOT23
Part Status: Active
Current - Max: 100 mA
Power Dissipation (Max): 250 mW
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BAR6702VH6327XTSA1 BAR6702VH6327XTSA1 Infineon Technologies Infineon-BAR67-02V-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c7e7124d1017efcc0e8f30749 Description: RF DIODE PIN 150V 250MW SC79-2
Packaging: Tape & Reel (TR)
Package / Case: SC-79, SOD-523
Diode Type: PIN - Single
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 0.55pF @ 5V, 1MHz
Resistance @ If, F: 1Ohm @ 10mA, 100MHz
Voltage - Peak Reverse (Max): 150V
Supplier Device Package: PG-SC79-2
Part Status: Active
Current - Max: 200 mA
Power Dissipation (Max): 250 mW
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BAR6305E6327HTSA1 BAR6305E6327HTSA1 Infineon Technologies INFNS15694-1.pdf?t.download=true&u=5oefqw Description: RF DIODE PIN 50V 250MW PG-SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Diode Type: PIN - 1 Pair Common Cathode
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 0.3pF @ 5V, 1MHz
Resistance @ If, F: 1Ohm @ 10mA, 100MHz
Voltage - Peak Reverse (Max): 50V
Supplier Device Package: PG-SOT23
Part Status: Active
Current - Max: 100 mA
Power Dissipation (Max): 250 mW
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BAR6704E6327HTSA1 BAR6704E6327HTSA1 Infineon Technologies fundamentals-of-power-semiconductors Description: RF DIODE PIN 150V 250MW PG-SOT23
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Diode Type: PIN - 1 Pair Series Connection
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 0.55pF @ 5V, 1MHz
Resistance @ If, F: 1Ohm @ 10mA, 100MHz
Voltage - Peak Reverse (Max): 150V
Supplier Device Package: PG-SOT23
Current - Max: 200 mA
Power Dissipation (Max): 250 mW
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BGA9C1MN9E6327XTSA1 BGA9C1MN9E6327XTSA1 Infineon Technologies Infineon-BGA9C1MN9-DataSheet-v02_00-EN.pdf?fileId=5546d46278d64ffd0178f97cdd580567 Description: IC RF AMP 5G 4.4GHZ-5GHZ TSNP9-6
Packaging: Tape & Reel (TR)
Package / Case: 9-XFLGA
Mounting Type: Surface Mount
Frequency: 4.4GHz ~ 5GHz
RF Type: 5G
Voltage - Supply: 1.1V ~ 2V
Gain: 20.5dB
Current - Supply: 5.6mA
Noise Figure: 1dB
P1dB: 8dBm
Test Frequency: 4.9GHz
Supplier Device Package: PG-TSNP-9-6
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BGA9C1MN9E6327XTSA1 BGA9C1MN9E6327XTSA1 Infineon Technologies Infineon-BGA9C1MN9-DataSheet-v02_00-EN.pdf?fileId=5546d46278d64ffd0178f97cdd580567 Description: IC RF AMP 5G 4.4GHZ-5GHZ TSNP9-6
Packaging: Cut Tape (CT)
Package / Case: 9-XFLGA
Mounting Type: Surface Mount
Frequency: 4.4GHz ~ 5GHz
RF Type: 5G
Voltage - Supply: 1.1V ~ 2V
Gain: 20.5dB
Current - Supply: 5.6mA
Noise Figure: 1dB
P1dB: 8dBm
Test Frequency: 4.9GHz
Supplier Device Package: PG-TSNP-9-6
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BGA9V1MN9E6327XTSA1 BGA9V1MN9E6327XTSA1 Infineon Technologies Infineon-BGA9V1MN9-DataSheet-v02_00-EN.pdf?fileId=5546d46278d64ffd0178f97cd4590564 Description: IC AMP 4G/5G 3.3-4.2GHZ TSNP9-6
Packaging: Tape & Reel (TR)
Package / Case: 9-XFLGA
Mounting Type: Surface Mount
Frequency: 3.3GHz ~ 4.2GHz
RF Type: 4G, 5G
Voltage - Supply: 1.1V ~ 2V
Gain: 22.5dB
Current - Supply: 5.8mA
Noise Figure: 0.75dB
P1dB: 7dbm
Test Frequency: 3.8GHz
Supplier Device Package: PG-TSNP-9-6
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BGA9V1MN9E6327XTSA1 BGA9V1MN9E6327XTSA1 Infineon Technologies Infineon-BGA9V1MN9-DataSheet-v02_00-EN.pdf?fileId=5546d46278d64ffd0178f97cd4590564 Description: IC AMP 4G/5G 3.3-4.2GHZ TSNP9-6
Packaging: Cut Tape (CT)
Package / Case: 9-XFLGA
Mounting Type: Surface Mount
Frequency: 3.3GHz ~ 4.2GHz
RF Type: 4G, 5G
Voltage - Supply: 1.1V ~ 2V
Gain: 22.5dB
Current - Supply: 5.8mA
Noise Figure: 0.75dB
P1dB: 7dbm
Test Frequency: 3.8GHz
Supplier Device Package: PG-TSNP-9-6
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BGA 915N7 E6327 BGA 915N7 E6327 Infineon Technologies Part_Number_Guide_Web.pdf Description: IC RF AMP GPS 1575.42MHZ TSNP7-6
Packaging: Cut Tape (CT)
Package / Case: 6-XFDFN Exposed Pad
Mounting Type: Surface Mount
Frequency: 1575.42MHz
RF Type: GPS
Voltage - Supply: 1.5V ~ 3.6V
Gain: 15.5dB
Current - Supply: 4.4mA
Noise Figure: 0.7dB
P1dB: -5dBm
Test Frequency: 1575.42MHz
Supplier Device Package: PG-TSNP-7-6
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F475R07W2H3B51BOMA1 Infineon Technologies INFN-S-A0000110237-1.pdf?t.download=true&u=5oefqw Description: IGBT, 75A, 650V, N-CHANNEL
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BAT1707E6327HTSA1 BAT1707E6327HTSA1 Infineon Technologies Infineon-BAT17-07-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c7e7124d1017efcca5b420773 Description: DIODE SCHOTTKY 4V 150MW SOT143-4
Packaging: Tape & Reel (TR)
Package / Case: TO-253-4, TO-253AA
Diode Type: Schottky - 2 Independent
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 0.75pF @ 0V, 1MHz
Resistance @ If, F: 15Ohm @ 5mA, 10kHz
Voltage - Peak Reverse (Max): 4V
Supplier Device Package: PG-SOT-143-3D
Part Status: Active
Current - Max: 130 mA
Power Dissipation (Max): 150 mW
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BAT5405WH6327XTSA1 BAT5405WH6327XTSA1 Infineon Technologies INFNS15399-1.pdf?t.download=true&u=5oefqw Description: DIODE ARR SCHOT 30V 200MA SOT323
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 5 ns
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 200mA (DC)
Supplier Device Package: PG-SOT323
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 100 mA
Current - Reverse Leakage @ Vr: 2 µA @ 25 V
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IPG20N04S409ATMA1 IPG20N04S409ATMA1 Infineon Technologies INFNS15593-1.pdf?t.download=true&u=5oefqw Description: MOSFET N-CHANNEL_30/40V
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IPG20N04S409ATMA1 IPG20N04S409ATMA1 Infineon Technologies INFNS15593-1.pdf?t.download=true&u=5oefqw Description: MOSFET N-CHANNEL_30/40V
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BSC0925NDATMA1 BSC0925NDATMA1 Infineon Technologies Infineon-BSC0925ND-DS-v02_00-en.pdf?fileId=db3a304336ca04c90136cec562a24914 Description: MOSFET 2N-CH 30V 15A TISON8
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.5W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 15A
Input Capacitance (Ciss) (Max) @ Vds: 1157pF @ 15V
Rds On (Max) @ Id, Vgs: 5mOhm @ 20A, 10V
Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TISON-8
Part Status: Active
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XMC1301-T038F0032AAXUMA1 XMC1301-T038F0032AAXUMA1 Infineon Technologies INFN-S-A0003614666-1.pdf?t.download=true&u=5oefqw Description: 32-BIT MCU XMC1000 ARM CORTEX-M0
Packaging: Bulk
Package / Case: 38-TFSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Speed: 32MHz
Program Memory Size: 32KB (32K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: A/D 16x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V
Connectivity: I²C, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, I²S, POR, PWM, WDT
Supplier Device Package: PG-TSSOP-38-9
Part Status: Active
Number of I/O: 26
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FP35R12W2T4PBPSA1 FP35R12W2T4PBPSA1 Infineon Technologies Infineon-FP35R12W2T4P-DS-v03_00-EN.pdf?fileId=5546d4625bd71aa0015bfbbf0d7a71f8 Description: IGBT MOD 1200V 70A 20MW
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Three Phase Bridge Rectifier
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.25V @ 15V, 35A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 70 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 2 nF @ 25 V
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TLI4971A025T5UE0001XUMA1 TLI4971A025T5UE0001XUMA1 Infineon Technologies Infineon-TLI4971_25_50_75_120-DataSheet-v01_20-EN.pdf?fileId=5546d462700c0ae6017034d731621b09 Description: SENSOR CURRENT HALL 25A 8TISON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Polarization: Unidirectional
Sensitivity: 48mV/A
Mounting Type: Surface Mount
Output: Ratiometric, Voltage
Frequency: DC ~ 240kHz
Operating Temperature: -40°C ~ 105°C
Voltage - Supply: 3.1V ~ 3.5V
Response Time: 250ns
Sensor Type: Hall Effect, Open Loop
Linearity: ±2.25%
For Measuring: AC/DC
Current - Supply (Max): 25mA
Current - Sensing: 25A
Supplier Device Package: PG-TISON-8-5
Part Status: Active
Number of Channels: 1
Grade: Automotive
Qualification: AEC-Q100
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5+5.78 EUR
10+5.48 EUR
25+5.12 EUR
50+4.88 EUR
100+4.67 EUR
500+4.26 EUR
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BSL373SNH6327XTSA1 BSL373SNH6327XTSA1 Infineon Technologies BSL373SN.pdf Description: MOSFET N-CH 100V 2A TSOP-6
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IPD038N06N3G Infineon Technologies Description: IPD038N06N3G
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BSZ096N10LS5ATMA1 BSZ096N10LS5ATMA1 Infineon Technologies Infineon-BSZ096N10LS5-DS-v02_01-EN.pdf?fileId=5546d4625696ed760156e6c1828027cf Description: MOSFET N-CH 100V 40A TSDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 9.6mOhm @ 20A, 10V
Power Dissipation (Max): 69W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 36µA
Supplier Device Package: PG-TSDSON-8-FL
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 50 V
Produkt ist nicht verfügbar
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BSZ096N10LS5ATMA1 BSZ096N10LS5ATMA1 Infineon Technologies Infineon-BSZ096N10LS5-DS-v02_01-EN.pdf?fileId=5546d4625696ed760156e6c1828027cf Description: MOSFET N-CH 100V 40A TSDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 9.6mOhm @ 20A, 10V
Power Dissipation (Max): 69W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 36µA
Supplier Device Package: PG-TSDSON-8-FL
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 50 V
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ICE5QR4770AZXKLA1 ICE5QR4770AZXKLA1 Infineon Technologies INFN-S-A0003555962-1.pdf?t.download=true&u=5oefqw Description: IC OFFLINE SWITCH FLYBACK 7DIP
Packaging: Bulk
Package / Case: 8-DIP (0.300", 7.62mm), 7 Leads
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 125°C (TJ)
Internal Switch(s): Yes
Voltage - Breakdown: 700V
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 10V ~ 27V
Supplier Device Package: PG-DIP-7
Fault Protection: Current Limiting, Open Loop, Over Load, Over Temperature, Over Voltage
Voltage - Start Up: 16 V
Part Status: Not For New Designs
Power (Watts): 27 W
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ICE5QR4770AGXUMA1 ICE5QR4770AGXUMA1 Infineon Technologies INFN-S-A0003555962-1.pdf?t.download=true&u=5oefqw Description: IC OFFLINE SWITCH FLYBACK 12DSO
Packaging: Bulk
Package / Case: 16-SOIC (0.154", 3.90mm Width), 12 Leads
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Internal Switch(s): Yes
Voltage - Breakdown: 700V
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 10V ~ 27V
Supplier Device Package: PG-DSO-12-21
Fault Protection: Current Limiting, Open Loop, Over Load, Over Temperature, Over Voltage
Voltage - Start Up: 16 V
Part Status: Not For New Designs
Power (Watts): 27 W
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ICE5QR2270AZ ICE5QR2270AZ Infineon Technologies INFN-S-A0003555962-1.pdf?t.download=true&u=5oefqw Description: ICE5QR2270 - QUASI RESONANT COOL
Packaging: Bulk
Package / Case: 8-DIP (0.300", 7.62mm), 7 Leads
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Internal Switch(s): Yes
Voltage - Breakdown: 700V
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 10V ~ 25.5V
Supplier Device Package: PG-DIP-7
Fault Protection: Current Limiting, Open Loop, Over Load, Over Temperature, Over Voltage
Voltage - Start Up: 16 V
Control Features: Frequency Control, Soft Start
Part Status: Active
Power (Watts): 41 W
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PXDNGL01TOBO1 PXDNGL01TOBO1 Infineon Technologies Description: EVAL DONGLE
Packaging: Bulk
Type: License
License - User Details: USB Dongle
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S27KL0641DABHA033 S27KL0641DABHA033 Infineon Technologies Infineon-S27KL0641_S27KS0641_S70KL1281_S70KS1281_3.0_V_1.8_V_64_Mb_(8_MB)_128_Mb_(16_MB)_HyperRAM_Self-Refresh_DRAM-DataSheet-v15_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed18c684db5&utm_source=cypress&utm_medium=referral&utm_ca Description: IC PSRAM 64MBIT PAR 24FBGA
Packaging: Tape & Reel (TR)
Package / Case: 24-VBGA
Mounting Type: Surface Mount
Memory Size: 64Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: PSRAM (Pseudo SRAM)
Clock Frequency: 100 MHz
Memory Format: PSRAM
Supplier Device Package: 24-FBGA (6x8)
Part Status: Obsolete
Memory Interface: Parallel
Access Time: 40 ns
Memory Organization: 8M x 8
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S27KL0641DABHI030 S27KL0641DABHI030 Infineon Technologies Infineon-S27KL0641_S27KS0641_S70KL1281_S70KS1281_3.0_V_1.8_V_64_Mb_(8_MB)_128_Mb_(16_MB)_HyperRAM_Self-Refresh_DRAM-DataSheet-v15_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed18c684db5&utm_source=cypress&utm_medium=referral&utm_ca Description: IC PSRAM 64MBIT PAR 24FBGA
Packaging: Tray
Package / Case: 24-VBGA
Mounting Type: Surface Mount
Memory Size: 64Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: PSRAM (Pseudo SRAM)
Clock Frequency: 100 MHz
Memory Format: PSRAM
Supplier Device Package: 24-FBGA (6x8)
Part Status: Obsolete
Memory Interface: Parallel
Access Time: 40 ns
Memory Organization: 8M x 8
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S27KL0641DABHA030 S27KL0641DABHA030 Infineon Technologies Infineon-S27KL0641_S27KS0641_S70KL1281_S70KS1281_3.0_V_1.8_V_64_Mb_(8_MB)_128_Mb_(16_MB)_HyperRAM_Self-Refresh_DRAM-DataSheet-v15_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed18c684db5&utm_source=cypress&utm_medium=referral&utm_ca Description: IC PSRAM 64MBIT PAR 24FBGA
Packaging: Tray
Package / Case: 24-VBGA
Mounting Type: Surface Mount
Memory Size: 64Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: PSRAM (Pseudo SRAM)
Clock Frequency: 100 MHz
Memory Format: PSRAM
Supplier Device Package: 24-FBGA (6x8)
Part Status: Obsolete
Memory Interface: Parallel
Access Time: 40 ns
Memory Organization: 8M x 8
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S27KL0641DABHB030 S27KL0641DABHB030 Infineon Technologies Infineon-S27KL0641_S27KS0641_S70KL1281_S70KS1281_3.0_V_1.8_V_64_Mb_(8_MB)_128_Mb_(16_MB)_HyperRAM_Self-Refresh_DRAM-DataSheet-v15_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed18c684db5&utm_source=cypress&utm_medium=referral&utm_ca Description: IC PSRAM 64MBIT PAR 24FBGA
Packaging: Tray
Package / Case: 24-VBGA
Mounting Type: Surface Mount
Memory Size: 64Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: PSRAM (Pseudo SRAM)
Clock Frequency: 100 MHz
Memory Format: PSRAM
Supplier Device Package: 24-FBGA (6x8)
Part Status: Obsolete
Memory Interface: Parallel
Access Time: 40 ns
Memory Organization: 8M x 8
Produkt ist nicht verfügbar
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S70KL1281DABHI023 S70KL1281DABHI023 Infineon Technologies Infineon-S27KL0641_S27KS0641_S70KL1281_S70KS1281_3.0_V_1.8_V_64_Mb_(8_MB)_128_Mb_(16_MB)_HyperRAM_Self-Refresh_DRAM-DataSheet-v15_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed18c684db5&utm_source=cypress&utm_medium=referral&utm_ca Description: IC PSRAM 128MBIT PARALLEL 24FBGA
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S70KL1281DABHI020 S70KL1281DABHI020 Infineon Technologies Infineon-S27KL0641_S27KS0641_S70KL1281_S70KS1281_3.0_V_1.8_V_64_Mb_(8_MB)_128_Mb_(16_MB)_HyperRAM_Self-Refresh_DRAM-DataSheet-v15_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed18c684db5&utm_source=cypress&utm_medium=referral&utm_ca Description: IC PSRAM 128MBIT PARALLEL 24FBGA
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S70KL1281DABHV020 S70KL1281DABHV020 Infineon Technologies Infineon-S27KL0641_S27KS0641_S70KL1281_S70KS1281_3.0_V_1.8_V_64_Mb_(8_MB)_128_Mb_(16_MB)_HyperRAM_Self-Refresh_DRAM-DataSheet-v15_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed18c684db5&utm_source=cypress&utm_medium=referral&utm_ca Description: IC PSRAM 128MBIT PARALLEL 24FBGA
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TLE73683EXUMA2 Infineon Technologies Infineon-TLE7368-DS-v02_21-EN.pdf?fileId=5546d46258fc0bc1015969d271b041d1 Description: TLE7368 - OPTIREG PMIC (AUTOMOTI
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IPP076N12N3G IPP076N12N3G Infineon Technologies INFNS27824-1.pdf?t.download=true&u=5oefqw Description: IPP076N12 - 12V-300V N-CHANNEL P
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BAR6302LE6327XTMA1 BAR6302LE6327XTMA1 Infineon Technologies INFNS15694-1.pdf?t.download=true&u=5oefqw Description: RF DIODE PIN 50V 250MW TSLP-2
Packaging: Tape & Reel (TR)
Package / Case: SOD-882
Diode Type: PIN - Single
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 0.3pF @ 5V, 1MHz
Resistance @ If, F: 1Ohm @ 10mA, 100MHz
Voltage - Peak Reverse (Max): 50V
Supplier Device Package: PG-TSLP-2-1
Part Status: Active
Current - Max: 100 mA
Power Dissipation (Max): 250 mW
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S71KL256SC0BHB003 S71KL256SC0BHB003 Infineon Technologies Infineon-512_MBIT_HYPERFLASH_+_64_MBIT_HYPERRAM_3V_MCP-DataSheet-v05_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee30f916a0a&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Description: IC FLASH RAM 256MBIT PAR 24FBGA
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BSM100GD120DN2BDLA1 Infineon Technologies Description: IGBT MODULE 1200V
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Full Bridge
Operating Temperature: 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 100A
NTC Thermistor: No
Supplier Device Package: Module
Part Status: Last Time Buy
Current - Collector (Ic) (Max): 150 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 680 W
Current - Collector Cutoff (Max): 2 mA
Input Capacitance (Cies) @ Vce: 6.5 nF @ 25 V
Produkt ist nicht verfügbar
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IPA80R310CE IPA80R310CE Infineon Technologies INFN-S-A0001300584-1.pdf?t.download=true&u=5oefqw Description: IPA80R310 - 800V COOLMOS N-CHANN
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16.7A (Tc)
Rds On (Max) @ Id, Vgs: 310mOhm @ 11A, 10V
Power Dissipation (Max): 35W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 1mA
Supplier Device Package: PG-TO220 Full Pack
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 91 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2320 pF @ 100 V
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IRGIB6B60KDPBF-INF IRGIB6B60KDPBF-INF Infineon Technologies IRSDS09614-1.pdf?t.download=true&u=5oefqw Description: IGBT 600V 11A TO220 FP
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 91 ns
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 5A
Supplier Device Package: TO220 Full Pack
Td (on/off) @ 25°C: 60ns/160ns
Switching Energy: 600µJ (on), 580µJ (off)
Test Condition: 480V, 16A, 23Ohm, 15V
Gate Charge: 18.2 nC
Part Status: Active
Current - Collector (Ic) (Max): 11 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 22 A
Power - Max: 38 W
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S27KS0641DPBHB023 S27KS0641DPBHB023 Infineon Technologies Infineon-S27KL0641_S27KS0641_S70KL1281_S70KS1281_3.0_V_1.8_V_64_Mb_(8_MB)_128_Mb_(16_MB)_HyperRAM_Self-Refresh_DRAM-DataSheet-v15_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed18c684db5&utm_source=cypress&utm_medium=referral&utm_ca Description: IC PSRAM 64MBIT PARALLEL 24FBGA
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S70KS1281DPBHV020 S70KS1281DPBHV020 Infineon Technologies Infineon-S27KL0641_S27KS0641_S70KL1281_S70KS1281_3.0_V_1.8_V_64_Mb_(8_MB)_128_Mb_(16_MB)_HyperRAM_Self-Refresh_DRAM-DataSheet-v15_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed18c684db5&utm_source=cypress&utm_medium=referral&utm_ca Description: IC PSRAM 128MBIT PAR 24FBGA
Packaging: Tray
Package / Case: 24-VBGA
Mounting Type: Surface Mount
Memory Size: 128Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 1.7V ~ 1.95V
Technology: PSRAM (Pseudo SRAM)
Clock Frequency: 166 MHz
Memory Format: PSRAM
Supplier Device Package: 24-FBGA (6x8)
Memory Interface: Parallel
Access Time: 36 ns
Memory Organization: 16M x 8
DigiKey Programmable: Not Verified
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CYW20705A1KWFBGT CYW20705A1KWFBGT Infineon Technologies Infineon-CYW20705_Single_Chip_Bluetooth_Transceiver_and_Baseband_Processor_Datasheet-AdditionalTechnicalInformation-v07_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee20183683a&utm_source=cypress&utm_medium=referral&utm_campaign=202 Description: IC RF TXRX+MCU BLUETOOTH 50WFBGA
Packaging: Tape & Reel (TR)
Package / Case: 50-WFBGA
Sensitivity: -91dBm
Mounting Type: Surface Mount
Frequency: 2.4GHz
Type: TxRx + MCU
Operating Temperature: -30°C ~ 85°C
Voltage - Supply: 5.5V
Power - Output: 10dBm
Protocol: Bluetooth v4.1
Current - Receiving: 31mA
Data Rate (Max): 3Mbps
Current - Transmitting: 65mA
Supplier Device Package: 50-WFBGA (4.5x4)
GPIO: 8
RF Family/Standard: Bluetooth
Serial Interfaces: SPI, UART, USB
DigiKey Programmable: Not Verified
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2500+2.06 EUR
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CYW20705A1KWFBGT CYW20705A1KWFBGT Infineon Technologies Infineon-CYW20705_Single_Chip_Bluetooth_Transceiver_and_Baseband_Processor_Datasheet-AdditionalTechnicalInformation-v07_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee20183683a&utm_source=cypress&utm_medium=referral&utm_campaign=202 Description: IC RF TXRX+MCU BLUETOOTH 50WFBGA
Packaging: Cut Tape (CT)
Package / Case: 50-WFBGA
Sensitivity: -91dBm
Mounting Type: Surface Mount
Frequency: 2.4GHz
Type: TxRx + MCU
Operating Temperature: -30°C ~ 85°C
Voltage - Supply: 5.5V
Power - Output: 10dBm
Protocol: Bluetooth v4.1
Current - Receiving: 31mA
Data Rate (Max): 3Mbps
Current - Transmitting: 65mA
Supplier Device Package: 50-WFBGA (4.5x4)
GPIO: 8
RF Family/Standard: Bluetooth
Serial Interfaces: SPI, UART, USB
DigiKey Programmable: Not Verified
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CYW20705B0KWFBGT CYW20705B0KWFBGT Infineon Technologies Infineon-CYW20705_Single_Chip_Bluetooth_Transceiver_and_Baseband_Processor_Datasheet-AdditionalTechnicalInformation-v07_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee20183683a&utm_source=cypress&utm_medium=referral&utm_campaign=202 Description: IC RF TXRX+MCU BLUETOOTH 50WFBGA
Packaging: Tape & Reel (TR)
Package / Case: 50-WFBGA
Sensitivity: -91dBm
Mounting Type: Surface Mount
Frequency: 2.4GHz
Type: TxRx + MCU
Operating Temperature: -30°C ~ 85°C
Voltage - Supply: 5.5V
Power - Output: 10dBm
Protocol: Bluetooth v4.1
Current - Receiving: 31mA
Data Rate (Max): 3Mbps
Current - Transmitting: 65mA
Supplier Device Package: 50-WFBGA (4.5x4)
GPIO: 8
RF Family/Standard: Bluetooth
Serial Interfaces: SPI, UART, USB
DigiKey Programmable: Not Verified
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CYW20705B0KWFBG CYW20705B0KWFBG Infineon Technologies Infineon-CYW20705_Single_Chip_Bluetooth_Transceiver_and_Baseband_Processor_Datasheet-AdditionalTechnicalInformation-v07_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee20183683a&utm_source=cypress&utm_medium=referral&utm_campaign=202 Description: IC RF TXRX+MCU BLUETOOTH 50WFBGA
Packaging: Tray
Package / Case: 50-WFBGA
Sensitivity: -91dBm
Mounting Type: Surface Mount
Frequency: 2.4GHz
Type: TxRx + MCU
Operating Temperature: -30°C ~ 85°C
Voltage - Supply: 5.5V
Power - Output: 10dBm
Protocol: Bluetooth v4.1
Current - Receiving: 31mA
Data Rate (Max): 3Mbps
Current - Transmitting: 65mA
Supplier Device Package: 50-WFBGA (4.5x4)
GPIO: 8
RF Family/Standard: Bluetooth
Serial Interfaces: SPI, UART, USB
Part Status: Active
DigiKey Programmable: Not Verified
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IRFR2405TRLPBF IRFR2405TRLPBF Infineon Technologies irfr2405pbf.pdf?fileId=5546d462533600a40153562da91b2079 Description: MOSFET N-CH 55V 56A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 56A (Tc)
Rds On (Max) @ Id, Vgs: 16mOhm @ 34A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2430 pF @ 25 V
Produkt ist nicht verfügbar
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ND261N20KHPSA1 ND261N.pdf
Hersteller: Infineon Technologies
Description: DIODE GP 2KV 260A BG-PB50ND-1
Produkt ist nicht verfügbar
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ITS42K5DLDFXUMA1 Infineon-ITS42K5D-LD-F-DS-v01_00-EN.pdf?fileId=5546d4624e24005f014e5300f0d5546a
ITS42K5DLDFXUMA1
Hersteller: Infineon Technologies
Description: IC PWR SWITCH P-CHAN 1:1 TSON10
Packaging: Cut Tape (CT)
Package / Case: 10-TFDFN Exposed Pad
Output Type: P-Channel
Mounting Type: Surface Mount, Wettable Flank
Number of Outputs: 2
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: High Side
Rds On (Typ): 2.5Ohm
Input Type: Non-Inverting
Voltage - Load: 4.5V ~ 42V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 250mA
Ratio - Input:Output: 1:1
Supplier Device Package: PG-TSON-10-2
Fault Protection: Over Temperature, UVLO
Part Status: Not For New Designs
auf Bestellung 127501 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
7+2.59 EUR
10+1.89 EUR
25+1.72 EUR
100+1.53 EUR
250+1.44 EUR
500+1.38 EUR
1000+1.34 EUR
2500+1.29 EUR
Mindestbestellmenge: 7
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TLE9877QTW40XUMA1 Infineon-TLE9877QTW40-DataSheet-v01_00-EN.pdf?fileId=5546d46274dd77260174e8c7597b349c
TLE9877QTW40XUMA1
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 64KB FLASH 48TQFP
Packaging: Tape & Reel (TR)
Package / Case: 48-TQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 40MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 6K x 8
Operating Temperature: -40°C ~ 175°C (TJ)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 4K x 8
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 5x10b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 5.5V ~ 27V
Connectivity: LINbus, SPI, SSC, UART/USART
Peripherals: Brown-out Detect/Reset, DMA, POR, PWM, WDT
Supplier Device Package: 48-TQFP (7x7)
Grade: Automotive
Part Status: Active
Number of I/O: 10
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2500+5.73 EUR
Mindestbestellmenge: 2500
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TLE9012AQUXUMA1 Infineon-Semiconductor_solutions_for_hybrid_electric_and_electric_cars-ABR-v01_00-EN.pdf?fileId=5546d46269e1c019016a4a76250c4ab4
TLE9012AQUXUMA1
Hersteller: Infineon Technologies
Description: IC BATT BALANCER 12CELL
Packaging: Cut Tape (CT)
Number of Cells: 12
Function: Battery Balancer
Interface: UART
Produkt ist nicht verfügbar
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IR3742MTRPBF ir3742.pdf?fileId=5546d462533600a4015355d130ac1798
IR3742MTRPBF
Hersteller: Infineon Technologies
Description: IC HALF BRIDGE DRIVER 20A 17QFN
Features: Bootstrap Circuit, Status Flag
Packaging: Tape & Reel (TR)
Package / Case: 17-PowerVQFN
Mounting Type: Surface Mount
Interface: PWM
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Half Bridge
Voltage - Supply: 4.5V ~ 7.5V
Rds On (Typ): 4mOhm LS, 8mOhm HS
Applications: Synchronous Buck Converters
Current - Output / Channel: 20A
Technology: Power MOSFET
Voltage - Load: 1V ~ 21V
Supplier Device Package: 17-PQFN (5x6)
Fault Protection: Current Limiting, Over Temperature, UVLO
Load Type: Inductive
Produkt ist nicht verfügbar
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IPD12CN10N Infineon-IPP12CN10N-DS-v01_08-en.pdf?fileId=db3a304412b407950112b42c236e467c
IPD12CN10N
Hersteller: Infineon Technologies
Description: N-CHANNEL POWER MOSFET
auf Bestellung 3175 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
279+1.81 EUR
Mindestbestellmenge: 279
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IPP12CN10LG INFNS16594-1.pdf?t.download=true&u=5oefqw
IPP12CN10LG
Hersteller: Infineon Technologies
Description: POWER FIELD-EFFECT TRANSISTOR, 6
auf Bestellung 1380 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
512+0.95 EUR
Mindestbestellmenge: 512
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TLE9012AQUXUMA1 Infineon-Semiconductor_solutions_for_hybrid_electric_and_electric_cars-ABR-v01_00-EN.pdf?fileId=5546d46269e1c019016a4a76250c4ab4
TLE9012AQUXUMA1
Hersteller: Infineon Technologies
Description: IC BATT BALANCER 12CELL
Packaging: Tape & Reel (TR)
Number of Cells: 12
Function: Battery Balancer
Interface: UART
Produkt ist nicht verfügbar
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IPTC014N08NM5ATMA1 Infineon-IPTC014N08NM5-DataSheet-v02_00-EN.pdf?fileId=5546d46277921c320177a519d1c32535
IPTC014N08NM5ATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 80V 37A/330A HDSOP
Packaging: Tape & Reel (TR)
Package / Case: 16-PowerSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 37A (Ta), 330A (Tc)
Rds On (Max) @ Id, Vgs: 1.4mOhm @ 100A, 10V
Power Dissipation (Max): 3.8W (Ta), 300W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 230µA
Supplier Device Package: PG-HDSOP-16-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 180 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13000 pF @ 40 V
Produkt ist nicht verfügbar
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IPTC014N08NM5ATMA1 Infineon-IPTC014N08NM5-DataSheet-v02_00-EN.pdf?fileId=5546d46277921c320177a519d1c32535
IPTC014N08NM5ATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 80V 37A/330A HDSOP
Packaging: Cut Tape (CT)
Package / Case: 16-PowerSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 37A (Ta), 330A (Tc)
Rds On (Max) @ Id, Vgs: 1.4mOhm @ 100A, 10V
Power Dissipation (Max): 3.8W (Ta), 300W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 230µA
Supplier Device Package: PG-HDSOP-16-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 180 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13000 pF @ 40 V
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+9.87 EUR
10+7.48 EUR
100+5.69 EUR
500+4.94 EUR
Mindestbestellmenge: 2
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IPB60R299CPAATMA1 INFN-S-A0003614947-1.pdf?t.download=true&u=5oefqw
IPB60R299CPAATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 600V 11A TO263-3
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 299mOhm @ 6.6A, 10V
Power Dissipation (Max): 96W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 440µA
Supplier Device Package: PG-TO263-3-2
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 100 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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SKW04N120FKSA1
Hersteller: Infineon Technologies
Description: IGBT
Produkt ist nicht verfügbar
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PBL38620/2SOA PBL38620,2 v2.pdf
PBL38620/2SOA
Hersteller: Infineon Technologies
Description: IC TELECOM INTERFACE PDSO-24
Packaging: Bulk
Package / Case: 24-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Function: Subscriber Line Interface Concept (SLIC)
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 5V
Current - Supply: 2.8mA
Supplier Device Package: PG-DSO-24-8
Number of Circuits: 1
Power (Watts): 290 mW
auf Bestellung 1510 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
76+6.66 EUR
Mindestbestellmenge: 76
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BAR6305WH6327XTSA1 INFNS15694-1.pdf?t.download=true&u=5oefqw
BAR6305WH6327XTSA1
Hersteller: Infineon Technologies
Description: RF DIODE PIN 50V 250MW PG-SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Diode Type: PIN - 1 Pair Common Cathode
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 0.3pF @ 5V, 1MHz
Resistance @ If, F: 1Ohm @ 10mA, 100MHz
Voltage - Peak Reverse (Max): 50V
Supplier Device Package: PG-SOT23
Part Status: Active
Current - Max: 100 mA
Power Dissipation (Max): 250 mW
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.10 EUR
Mindestbestellmenge: 3000
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BAR6702VH6327XTSA1 Infineon-BAR67-02V-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c7e7124d1017efcc0e8f30749
BAR6702VH6327XTSA1
Hersteller: Infineon Technologies
Description: RF DIODE PIN 150V 250MW SC79-2
Packaging: Tape & Reel (TR)
Package / Case: SC-79, SOD-523
Diode Type: PIN - Single
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 0.55pF @ 5V, 1MHz
Resistance @ If, F: 1Ohm @ 10mA, 100MHz
Voltage - Peak Reverse (Max): 150V
Supplier Device Package: PG-SC79-2
Part Status: Active
Current - Max: 200 mA
Power Dissipation (Max): 250 mW
auf Bestellung 9000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.18 EUR
9000+0.17 EUR
Mindestbestellmenge: 3000
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BAR6305E6327HTSA1 INFNS15694-1.pdf?t.download=true&u=5oefqw
BAR6305E6327HTSA1
Hersteller: Infineon Technologies
Description: RF DIODE PIN 50V 250MW PG-SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Diode Type: PIN - 1 Pair Common Cathode
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 0.3pF @ 5V, 1MHz
Resistance @ If, F: 1Ohm @ 10mA, 100MHz
Voltage - Peak Reverse (Max): 50V
Supplier Device Package: PG-SOT23
Part Status: Active
Current - Max: 100 mA
Power Dissipation (Max): 250 mW
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.18 EUR
Mindestbestellmenge: 3000
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BAR6704E6327HTSA1 fundamentals-of-power-semiconductors
BAR6704E6327HTSA1
Hersteller: Infineon Technologies
Description: RF DIODE PIN 150V 250MW PG-SOT23
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Diode Type: PIN - 1 Pair Series Connection
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 0.55pF @ 5V, 1MHz
Resistance @ If, F: 1Ohm @ 10mA, 100MHz
Voltage - Peak Reverse (Max): 150V
Supplier Device Package: PG-SOT23
Current - Max: 200 mA
Power Dissipation (Max): 250 mW
auf Bestellung 440107 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3328+0.15 EUR
Mindestbestellmenge: 3328
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BGA9C1MN9E6327XTSA1 Infineon-BGA9C1MN9-DataSheet-v02_00-EN.pdf?fileId=5546d46278d64ffd0178f97cdd580567
BGA9C1MN9E6327XTSA1
Hersteller: Infineon Technologies
Description: IC RF AMP 5G 4.4GHZ-5GHZ TSNP9-6
Packaging: Tape & Reel (TR)
Package / Case: 9-XFLGA
Mounting Type: Surface Mount
Frequency: 4.4GHz ~ 5GHz
RF Type: 5G
Voltage - Supply: 1.1V ~ 2V
Gain: 20.5dB
Current - Supply: 5.6mA
Noise Figure: 1dB
P1dB: 8dBm
Test Frequency: 4.9GHz
Supplier Device Package: PG-TSNP-9-6
Produkt ist nicht verfügbar
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BGA9C1MN9E6327XTSA1 Infineon-BGA9C1MN9-DataSheet-v02_00-EN.pdf?fileId=5546d46278d64ffd0178f97cdd580567
BGA9C1MN9E6327XTSA1
Hersteller: Infineon Technologies
Description: IC RF AMP 5G 4.4GHZ-5GHZ TSNP9-6
Packaging: Cut Tape (CT)
Package / Case: 9-XFLGA
Mounting Type: Surface Mount
Frequency: 4.4GHz ~ 5GHz
RF Type: 5G
Voltage - Supply: 1.1V ~ 2V
Gain: 20.5dB
Current - Supply: 5.6mA
Noise Figure: 1dB
P1dB: 8dBm
Test Frequency: 4.9GHz
Supplier Device Package: PG-TSNP-9-6
Produkt ist nicht verfügbar
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BGA9V1MN9E6327XTSA1 Infineon-BGA9V1MN9-DataSheet-v02_00-EN.pdf?fileId=5546d46278d64ffd0178f97cd4590564
BGA9V1MN9E6327XTSA1
Hersteller: Infineon Technologies
Description: IC AMP 4G/5G 3.3-4.2GHZ TSNP9-6
Packaging: Tape & Reel (TR)
Package / Case: 9-XFLGA
Mounting Type: Surface Mount
Frequency: 3.3GHz ~ 4.2GHz
RF Type: 4G, 5G
Voltage - Supply: 1.1V ~ 2V
Gain: 22.5dB
Current - Supply: 5.8mA
Noise Figure: 0.75dB
P1dB: 7dbm
Test Frequency: 3.8GHz
Supplier Device Package: PG-TSNP-9-6
auf Bestellung 12000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
12000+0.83 EUR
Mindestbestellmenge: 12000
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BGA9V1MN9E6327XTSA1 Infineon-BGA9V1MN9-DataSheet-v02_00-EN.pdf?fileId=5546d46278d64ffd0178f97cd4590564
BGA9V1MN9E6327XTSA1
Hersteller: Infineon Technologies
Description: IC AMP 4G/5G 3.3-4.2GHZ TSNP9-6
Packaging: Cut Tape (CT)
Package / Case: 9-XFLGA
Mounting Type: Surface Mount
Frequency: 3.3GHz ~ 4.2GHz
RF Type: 4G, 5G
Voltage - Supply: 1.1V ~ 2V
Gain: 22.5dB
Current - Supply: 5.8mA
Noise Figure: 0.75dB
P1dB: 7dbm
Test Frequency: 3.8GHz
Supplier Device Package: PG-TSNP-9-6
auf Bestellung 12000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
10+1.87 EUR
13+1.43 EUR
25+1.28 EUR
100+1.10 EUR
250+1.01 EUR
500+0.94 EUR
1000+0.89 EUR
5000+0.78 EUR
Mindestbestellmenge: 10
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BGA 915N7 E6327 Part_Number_Guide_Web.pdf
BGA 915N7 E6327
Hersteller: Infineon Technologies
Description: IC RF AMP GPS 1575.42MHZ TSNP7-6
Packaging: Cut Tape (CT)
Package / Case: 6-XFDFN Exposed Pad
Mounting Type: Surface Mount
Frequency: 1575.42MHz
RF Type: GPS
Voltage - Supply: 1.5V ~ 3.6V
Gain: 15.5dB
Current - Supply: 4.4mA
Noise Figure: 0.7dB
P1dB: -5dBm
Test Frequency: 1575.42MHz
Supplier Device Package: PG-TSNP-7-6
Produkt ist nicht verfügbar
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F475R07W2H3B51BOMA1 INFN-S-A0000110237-1.pdf?t.download=true&u=5oefqw
Hersteller: Infineon Technologies
Description: IGBT, 75A, 650V, N-CHANNEL
auf Bestellung 180 Stücke:
Lieferzeit 10-14 Tag (e)
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BAT1707E6327HTSA1 Infineon-BAT17-07-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c7e7124d1017efcca5b420773
BAT1707E6327HTSA1
Hersteller: Infineon Technologies
Description: DIODE SCHOTTKY 4V 150MW SOT143-4
Packaging: Tape & Reel (TR)
Package / Case: TO-253-4, TO-253AA
Diode Type: Schottky - 2 Independent
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 0.75pF @ 0V, 1MHz
Resistance @ If, F: 15Ohm @ 5mA, 10kHz
Voltage - Peak Reverse (Max): 4V
Supplier Device Package: PG-SOT-143-3D
Part Status: Active
Current - Max: 130 mA
Power Dissipation (Max): 150 mW
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.22 EUR
Mindestbestellmenge: 3000
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BAT5405WH6327XTSA1 INFNS15399-1.pdf?t.download=true&u=5oefqw
BAT5405WH6327XTSA1
Hersteller: Infineon Technologies
Description: DIODE ARR SCHOT 30V 200MA SOT323
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 5 ns
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 200mA (DC)
Supplier Device Package: PG-SOT323
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 100 mA
Current - Reverse Leakage @ Vr: 2 µA @ 25 V
auf Bestellung 99000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.09 EUR
6000+0.08 EUR
9000+0.08 EUR
15000+0.07 EUR
21000+0.07 EUR
30000+0.06 EUR
75000+0.06 EUR
Mindestbestellmenge: 3000
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IPG20N04S409ATMA1 INFNS15593-1.pdf?t.download=true&u=5oefqw
IPG20N04S409ATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CHANNEL_30/40V
Produkt ist nicht verfügbar
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IPG20N04S409ATMA1 INFNS15593-1.pdf?t.download=true&u=5oefqw
IPG20N04S409ATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CHANNEL_30/40V
Produkt ist nicht verfügbar
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BSC0925NDATMA1 Infineon-BSC0925ND-DS-v02_00-en.pdf?fileId=db3a304336ca04c90136cec562a24914
BSC0925NDATMA1
Hersteller: Infineon Technologies
Description: MOSFET 2N-CH 30V 15A TISON8
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.5W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 15A
Input Capacitance (Ciss) (Max) @ Vds: 1157pF @ 15V
Rds On (Max) @ Id, Vgs: 5mOhm @ 20A, 10V
Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TISON-8
Part Status: Active
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XMC1301-T038F0032AAXUMA1 INFN-S-A0003614666-1.pdf?t.download=true&u=5oefqw
XMC1301-T038F0032AAXUMA1
Hersteller: Infineon Technologies
Description: 32-BIT MCU XMC1000 ARM CORTEX-M0
Packaging: Bulk
Package / Case: 38-TFSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Speed: 32MHz
Program Memory Size: 32KB (32K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: A/D 16x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V
Connectivity: I²C, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, I²S, POR, PWM, WDT
Supplier Device Package: PG-TSSOP-38-9
Part Status: Active
Number of I/O: 26
Produkt ist nicht verfügbar
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FP35R12W2T4PBPSA1 Infineon-FP35R12W2T4P-DS-v03_00-EN.pdf?fileId=5546d4625bd71aa0015bfbbf0d7a71f8
FP35R12W2T4PBPSA1
Hersteller: Infineon Technologies
Description: IGBT MOD 1200V 70A 20MW
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Three Phase Bridge Rectifier
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.25V @ 15V, 35A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 70 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 2 nF @ 25 V
auf Bestellung 1 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+111.71 EUR
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TLI4971A025T5UE0001XUMA1 Infineon-TLI4971_25_50_75_120-DataSheet-v01_20-EN.pdf?fileId=5546d462700c0ae6017034d731621b09
TLI4971A025T5UE0001XUMA1
Hersteller: Infineon Technologies
Description: SENSOR CURRENT HALL 25A 8TISON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Polarization: Unidirectional
Sensitivity: 48mV/A
Mounting Type: Surface Mount
Output: Ratiometric, Voltage
Frequency: DC ~ 240kHz
Operating Temperature: -40°C ~ 105°C
Voltage - Supply: 3.1V ~ 3.5V
Response Time: 250ns
Sensor Type: Hall Effect, Open Loop
Linearity: ±2.25%
For Measuring: AC/DC
Current - Supply (Max): 25mA
Current - Sensing: 25A
Supplier Device Package: PG-TISON-8-5
Part Status: Active
Number of Channels: 1
Grade: Automotive
Qualification: AEC-Q100
auf Bestellung 3178 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+6.64 EUR
5+5.78 EUR
10+5.48 EUR
25+5.12 EUR
50+4.88 EUR
100+4.67 EUR
500+4.26 EUR
1000+4.11 EUR
Mindestbestellmenge: 3
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BSL373SNH6327XTSA1 BSL373SN.pdf
BSL373SNH6327XTSA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 100V 2A TSOP-6
auf Bestellung 10614 Stücke:
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Anzahl Preis
1731+0.31 EUR
Mindestbestellmenge: 1731
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IPD038N06N3G
Hersteller: Infineon Technologies
Description: IPD038N06N3G
auf Bestellung 120 Stücke:
Lieferzeit 10-14 Tag (e)
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BSZ096N10LS5ATMA1 Infineon-BSZ096N10LS5-DS-v02_01-EN.pdf?fileId=5546d4625696ed760156e6c1828027cf
BSZ096N10LS5ATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 100V 40A TSDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 9.6mOhm @ 20A, 10V
Power Dissipation (Max): 69W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 36µA
Supplier Device Package: PG-TSDSON-8-FL
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 50 V
Produkt ist nicht verfügbar
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BSZ096N10LS5ATMA1 Infineon-BSZ096N10LS5-DS-v02_01-EN.pdf?fileId=5546d4625696ed760156e6c1828027cf
BSZ096N10LS5ATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 100V 40A TSDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 9.6mOhm @ 20A, 10V
Power Dissipation (Max): 69W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 36µA
Supplier Device Package: PG-TSDSON-8-FL
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 50 V
auf Bestellung 5672 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
7+2.83 EUR
10+2.02 EUR
100+1.41 EUR
500+1.24 EUR
1000+1.20 EUR
Mindestbestellmenge: 7
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ICE5QR4770AZXKLA1 INFN-S-A0003555962-1.pdf?t.download=true&u=5oefqw
ICE5QR4770AZXKLA1
Hersteller: Infineon Technologies
Description: IC OFFLINE SWITCH FLYBACK 7DIP
Packaging: Bulk
Package / Case: 8-DIP (0.300", 7.62mm), 7 Leads
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 125°C (TJ)
Internal Switch(s): Yes
Voltage - Breakdown: 700V
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 10V ~ 27V
Supplier Device Package: PG-DIP-7
Fault Protection: Current Limiting, Open Loop, Over Load, Over Temperature, Over Voltage
Voltage - Start Up: 16 V
Part Status: Not For New Designs
Power (Watts): 27 W
auf Bestellung 5926 Stücke:
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Anzahl Preis
318+1.54 EUR
Mindestbestellmenge: 318
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ICE5QR4770AGXUMA1 INFN-S-A0003555962-1.pdf?t.download=true&u=5oefqw
ICE5QR4770AGXUMA1
Hersteller: Infineon Technologies
Description: IC OFFLINE SWITCH FLYBACK 12DSO
Packaging: Bulk
Package / Case: 16-SOIC (0.154", 3.90mm Width), 12 Leads
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Internal Switch(s): Yes
Voltage - Breakdown: 700V
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 10V ~ 27V
Supplier Device Package: PG-DSO-12-21
Fault Protection: Current Limiting, Open Loop, Over Load, Over Temperature, Over Voltage
Voltage - Start Up: 16 V
Part Status: Not For New Designs
Power (Watts): 27 W
auf Bestellung 1046 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
318+1.54 EUR
Mindestbestellmenge: 318
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ICE5QR2270AZ INFN-S-A0003555962-1.pdf?t.download=true&u=5oefqw
ICE5QR2270AZ
Hersteller: Infineon Technologies
Description: ICE5QR2270 - QUASI RESONANT COOL
Packaging: Bulk
Package / Case: 8-DIP (0.300", 7.62mm), 7 Leads
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Internal Switch(s): Yes
Voltage - Breakdown: 700V
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 10V ~ 25.5V
Supplier Device Package: PG-DIP-7
Fault Protection: Current Limiting, Open Loop, Over Load, Over Temperature, Over Voltage
Voltage - Start Up: 16 V
Control Features: Frequency Control, Soft Start
Part Status: Active
Power (Watts): 41 W
auf Bestellung 2000 Stücke:
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Anzahl Preis
228+2.12 EUR
Mindestbestellmenge: 228
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PXDNGL01TOBO1
PXDNGL01TOBO1
Hersteller: Infineon Technologies
Description: EVAL DONGLE
Packaging: Bulk
Type: License
License - User Details: USB Dongle
auf Bestellung 37 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+96.78 EUR
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S27KL0641DABHA033 Infineon-S27KL0641_S27KS0641_S70KL1281_S70KS1281_3.0_V_1.8_V_64_Mb_(8_MB)_128_Mb_(16_MB)_HyperRAM_Self-Refresh_DRAM-DataSheet-v15_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed18c684db5&utm_source=cypress&utm_medium=referral&utm_ca
S27KL0641DABHA033
Hersteller: Infineon Technologies
Description: IC PSRAM 64MBIT PAR 24FBGA
Packaging: Tape & Reel (TR)
Package / Case: 24-VBGA
Mounting Type: Surface Mount
Memory Size: 64Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: PSRAM (Pseudo SRAM)
Clock Frequency: 100 MHz
Memory Format: PSRAM
Supplier Device Package: 24-FBGA (6x8)
Part Status: Obsolete
Memory Interface: Parallel
Access Time: 40 ns
Memory Organization: 8M x 8
Produkt ist nicht verfügbar
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S27KL0641DABHI030 Infineon-S27KL0641_S27KS0641_S70KL1281_S70KS1281_3.0_V_1.8_V_64_Mb_(8_MB)_128_Mb_(16_MB)_HyperRAM_Self-Refresh_DRAM-DataSheet-v15_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed18c684db5&utm_source=cypress&utm_medium=referral&utm_ca
S27KL0641DABHI030
Hersteller: Infineon Technologies
Description: IC PSRAM 64MBIT PAR 24FBGA
Packaging: Tray
Package / Case: 24-VBGA
Mounting Type: Surface Mount
Memory Size: 64Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: PSRAM (Pseudo SRAM)
Clock Frequency: 100 MHz
Memory Format: PSRAM
Supplier Device Package: 24-FBGA (6x8)
Part Status: Obsolete
Memory Interface: Parallel
Access Time: 40 ns
Memory Organization: 8M x 8
Produkt ist nicht verfügbar
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S27KL0641DABHA030 Infineon-S27KL0641_S27KS0641_S70KL1281_S70KS1281_3.0_V_1.8_V_64_Mb_(8_MB)_128_Mb_(16_MB)_HyperRAM_Self-Refresh_DRAM-DataSheet-v15_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed18c684db5&utm_source=cypress&utm_medium=referral&utm_ca
S27KL0641DABHA030
Hersteller: Infineon Technologies
Description: IC PSRAM 64MBIT PAR 24FBGA
Packaging: Tray
Package / Case: 24-VBGA
Mounting Type: Surface Mount
Memory Size: 64Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: PSRAM (Pseudo SRAM)
Clock Frequency: 100 MHz
Memory Format: PSRAM
Supplier Device Package: 24-FBGA (6x8)
Part Status: Obsolete
Memory Interface: Parallel
Access Time: 40 ns
Memory Organization: 8M x 8
Produkt ist nicht verfügbar
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S27KL0641DABHB030 Infineon-S27KL0641_S27KS0641_S70KL1281_S70KS1281_3.0_V_1.8_V_64_Mb_(8_MB)_128_Mb_(16_MB)_HyperRAM_Self-Refresh_DRAM-DataSheet-v15_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed18c684db5&utm_source=cypress&utm_medium=referral&utm_ca
S27KL0641DABHB030
Hersteller: Infineon Technologies
Description: IC PSRAM 64MBIT PAR 24FBGA
Packaging: Tray
Package / Case: 24-VBGA
Mounting Type: Surface Mount
Memory Size: 64Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: PSRAM (Pseudo SRAM)
Clock Frequency: 100 MHz
Memory Format: PSRAM
Supplier Device Package: 24-FBGA (6x8)
Part Status: Obsolete
Memory Interface: Parallel
Access Time: 40 ns
Memory Organization: 8M x 8
Produkt ist nicht verfügbar
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S70KL1281DABHI023 Infineon-S27KL0641_S27KS0641_S70KL1281_S70KS1281_3.0_V_1.8_V_64_Mb_(8_MB)_128_Mb_(16_MB)_HyperRAM_Self-Refresh_DRAM-DataSheet-v15_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed18c684db5&utm_source=cypress&utm_medium=referral&utm_ca
S70KL1281DABHI023
Hersteller: Infineon Technologies
Description: IC PSRAM 128MBIT PARALLEL 24FBGA
Produkt ist nicht verfügbar
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S70KL1281DABHI020 Infineon-S27KL0641_S27KS0641_S70KL1281_S70KS1281_3.0_V_1.8_V_64_Mb_(8_MB)_128_Mb_(16_MB)_HyperRAM_Self-Refresh_DRAM-DataSheet-v15_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed18c684db5&utm_source=cypress&utm_medium=referral&utm_ca
S70KL1281DABHI020
Hersteller: Infineon Technologies
Description: IC PSRAM 128MBIT PARALLEL 24FBGA
Produkt ist nicht verfügbar
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S70KL1281DABHV020 Infineon-S27KL0641_S27KS0641_S70KL1281_S70KS1281_3.0_V_1.8_V_64_Mb_(8_MB)_128_Mb_(16_MB)_HyperRAM_Self-Refresh_DRAM-DataSheet-v15_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed18c684db5&utm_source=cypress&utm_medium=referral&utm_ca
S70KL1281DABHV020
Hersteller: Infineon Technologies
Description: IC PSRAM 128MBIT PARALLEL 24FBGA
Produkt ist nicht verfügbar
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TLE73683EXUMA2 Infineon-TLE7368-DS-v02_21-EN.pdf?fileId=5546d46258fc0bc1015969d271b041d1
Hersteller: Infineon Technologies
Description: TLE7368 - OPTIREG PMIC (AUTOMOTI
Produkt ist nicht verfügbar
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IPP076N12N3G INFNS27824-1.pdf?t.download=true&u=5oefqw
IPP076N12N3G
Hersteller: Infineon Technologies
Description: IPP076N12 - 12V-300V N-CHANNEL P
Produkt ist nicht verfügbar
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BAR6302LE6327XTMA1 INFNS15694-1.pdf?t.download=true&u=5oefqw
BAR6302LE6327XTMA1
Hersteller: Infineon Technologies
Description: RF DIODE PIN 50V 250MW TSLP-2
Packaging: Tape & Reel (TR)
Package / Case: SOD-882
Diode Type: PIN - Single
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 0.3pF @ 5V, 1MHz
Resistance @ If, F: 1Ohm @ 10mA, 100MHz
Voltage - Peak Reverse (Max): 50V
Supplier Device Package: PG-TSLP-2-1
Part Status: Active
Current - Max: 100 mA
Power Dissipation (Max): 250 mW
auf Bestellung 15000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
15000+0.08 EUR
Mindestbestellmenge: 15000
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S71KL256SC0BHB003 Infineon-512_MBIT_HYPERFLASH_+_64_MBIT_HYPERRAM_3V_MCP-DataSheet-v05_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee30f916a0a&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
S71KL256SC0BHB003
Hersteller: Infineon Technologies
Description: IC FLASH RAM 256MBIT PAR 24FBGA
Produkt ist nicht verfügbar
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BSM100GD120DN2BDLA1
Hersteller: Infineon Technologies
Description: IGBT MODULE 1200V
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Full Bridge
Operating Temperature: 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 100A
NTC Thermistor: No
Supplier Device Package: Module
Part Status: Last Time Buy
Current - Collector (Ic) (Max): 150 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 680 W
Current - Collector Cutoff (Max): 2 mA
Input Capacitance (Cies) @ Vce: 6.5 nF @ 25 V
Produkt ist nicht verfügbar
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IPA80R310CE INFN-S-A0001300584-1.pdf?t.download=true&u=5oefqw
IPA80R310CE
Hersteller: Infineon Technologies
Description: IPA80R310 - 800V COOLMOS N-CHANN
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16.7A (Tc)
Rds On (Max) @ Id, Vgs: 310mOhm @ 11A, 10V
Power Dissipation (Max): 35W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 1mA
Supplier Device Package: PG-TO220 Full Pack
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 91 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2320 pF @ 100 V
Produkt ist nicht verfügbar
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IRGIB6B60KDPBF-INF IRSDS09614-1.pdf?t.download=true&u=5oefqw
IRGIB6B60KDPBF-INF
Hersteller: Infineon Technologies
Description: IGBT 600V 11A TO220 FP
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 91 ns
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 5A
Supplier Device Package: TO220 Full Pack
Td (on/off) @ 25°C: 60ns/160ns
Switching Energy: 600µJ (on), 580µJ (off)
Test Condition: 480V, 16A, 23Ohm, 15V
Gate Charge: 18.2 nC
Part Status: Active
Current - Collector (Ic) (Max): 11 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 22 A
Power - Max: 38 W
auf Bestellung 100 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
100+2.48 EUR
Mindestbestellmenge: 100
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S27KS0641DPBHB023 Infineon-S27KL0641_S27KS0641_S70KL1281_S70KS1281_3.0_V_1.8_V_64_Mb_(8_MB)_128_Mb_(16_MB)_HyperRAM_Self-Refresh_DRAM-DataSheet-v15_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed18c684db5&utm_source=cypress&utm_medium=referral&utm_ca
S27KS0641DPBHB023
Hersteller: Infineon Technologies
Description: IC PSRAM 64MBIT PARALLEL 24FBGA
Produkt ist nicht verfügbar
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S70KS1281DPBHV020 Infineon-S27KL0641_S27KS0641_S70KL1281_S70KS1281_3.0_V_1.8_V_64_Mb_(8_MB)_128_Mb_(16_MB)_HyperRAM_Self-Refresh_DRAM-DataSheet-v15_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed18c684db5&utm_source=cypress&utm_medium=referral&utm_ca
S70KS1281DPBHV020
Hersteller: Infineon Technologies
Description: IC PSRAM 128MBIT PAR 24FBGA
Packaging: Tray
Package / Case: 24-VBGA
Mounting Type: Surface Mount
Memory Size: 128Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 1.7V ~ 1.95V
Technology: PSRAM (Pseudo SRAM)
Clock Frequency: 166 MHz
Memory Format: PSRAM
Supplier Device Package: 24-FBGA (6x8)
Memory Interface: Parallel
Access Time: 36 ns
Memory Organization: 16M x 8
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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CYW20705A1KWFBGT Infineon-CYW20705_Single_Chip_Bluetooth_Transceiver_and_Baseband_Processor_Datasheet-AdditionalTechnicalInformation-v07_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee20183683a&utm_source=cypress&utm_medium=referral&utm_campaign=202
CYW20705A1KWFBGT
Hersteller: Infineon Technologies
Description: IC RF TXRX+MCU BLUETOOTH 50WFBGA
Packaging: Tape & Reel (TR)
Package / Case: 50-WFBGA
Sensitivity: -91dBm
Mounting Type: Surface Mount
Frequency: 2.4GHz
Type: TxRx + MCU
Operating Temperature: -30°C ~ 85°C
Voltage - Supply: 5.5V
Power - Output: 10dBm
Protocol: Bluetooth v4.1
Current - Receiving: 31mA
Data Rate (Max): 3Mbps
Current - Transmitting: 65mA
Supplier Device Package: 50-WFBGA (4.5x4)
GPIO: 8
RF Family/Standard: Bluetooth
Serial Interfaces: SPI, UART, USB
DigiKey Programmable: Not Verified
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2500+2.06 EUR
Mindestbestellmenge: 2500
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CYW20705A1KWFBGT Infineon-CYW20705_Single_Chip_Bluetooth_Transceiver_and_Baseband_Processor_Datasheet-AdditionalTechnicalInformation-v07_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee20183683a&utm_source=cypress&utm_medium=referral&utm_campaign=202
CYW20705A1KWFBGT
Hersteller: Infineon Technologies
Description: IC RF TXRX+MCU BLUETOOTH 50WFBGA
Packaging: Cut Tape (CT)
Package / Case: 50-WFBGA
Sensitivity: -91dBm
Mounting Type: Surface Mount
Frequency: 2.4GHz
Type: TxRx + MCU
Operating Temperature: -30°C ~ 85°C
Voltage - Supply: 5.5V
Power - Output: 10dBm
Protocol: Bluetooth v4.1
Current - Receiving: 31mA
Data Rate (Max): 3Mbps
Current - Transmitting: 65mA
Supplier Device Package: 50-WFBGA (4.5x4)
GPIO: 8
RF Family/Standard: Bluetooth
Serial Interfaces: SPI, UART, USB
DigiKey Programmable: Not Verified
auf Bestellung 2230 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
9+2.06 EUR
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CYW20705B0KWFBGT Infineon-CYW20705_Single_Chip_Bluetooth_Transceiver_and_Baseband_Processor_Datasheet-AdditionalTechnicalInformation-v07_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee20183683a&utm_source=cypress&utm_medium=referral&utm_campaign=202
CYW20705B0KWFBGT
Hersteller: Infineon Technologies
Description: IC RF TXRX+MCU BLUETOOTH 50WFBGA
Packaging: Tape & Reel (TR)
Package / Case: 50-WFBGA
Sensitivity: -91dBm
Mounting Type: Surface Mount
Frequency: 2.4GHz
Type: TxRx + MCU
Operating Temperature: -30°C ~ 85°C
Voltage - Supply: 5.5V
Power - Output: 10dBm
Protocol: Bluetooth v4.1
Current - Receiving: 31mA
Data Rate (Max): 3Mbps
Current - Transmitting: 65mA
Supplier Device Package: 50-WFBGA (4.5x4)
GPIO: 8
RF Family/Standard: Bluetooth
Serial Interfaces: SPI, UART, USB
DigiKey Programmable: Not Verified
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2500+2.11 EUR
Mindestbestellmenge: 2500
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CYW20705B0KWFBG Infineon-CYW20705_Single_Chip_Bluetooth_Transceiver_and_Baseband_Processor_Datasheet-AdditionalTechnicalInformation-v07_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee20183683a&utm_source=cypress&utm_medium=referral&utm_campaign=202
CYW20705B0KWFBG
Hersteller: Infineon Technologies
Description: IC RF TXRX+MCU BLUETOOTH 50WFBGA
Packaging: Tray
Package / Case: 50-WFBGA
Sensitivity: -91dBm
Mounting Type: Surface Mount
Frequency: 2.4GHz
Type: TxRx + MCU
Operating Temperature: -30°C ~ 85°C
Voltage - Supply: 5.5V
Power - Output: 10dBm
Protocol: Bluetooth v4.1
Current - Receiving: 31mA
Data Rate (Max): 3Mbps
Current - Transmitting: 65mA
Supplier Device Package: 50-WFBGA (4.5x4)
GPIO: 8
RF Family/Standard: Bluetooth
Serial Interfaces: SPI, UART, USB
Part Status: Active
DigiKey Programmable: Not Verified
auf Bestellung 7389 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
9+2.11 EUR
Mindestbestellmenge: 9
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IRFR2405TRLPBF irfr2405pbf.pdf?fileId=5546d462533600a40153562da91b2079
IRFR2405TRLPBF
Hersteller: Infineon Technologies
Description: MOSFET N-CH 55V 56A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 56A (Tc)
Rds On (Max) @ Id, Vgs: 16mOhm @ 34A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2430 pF @ 25 V
Produkt ist nicht verfügbar
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