Produkte > INFINEON TECHNOLOGIES > Alle Produkte des Herstellers INFINEON TECHNOLOGIES (149784) > Seite 428 nach 2497
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AUIRS2336STR | Infineon Technologies |
Description: IC GATE DRVR HALF-BRIDGE 28SOICPackaging: Tape & Reel (TR) Package / Case: 28-SOIC (0.295", 7.50mm Width) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Voltage - Supply: 10V ~ 20V Input Type: Non-Inverting High Side Voltage - Max (Bootstrap): 600 V Supplier Device Package: 28-SOIC Rise / Fall Time (Typ): 125ns, 50ns Channel Type: 3-Phase Driven Configuration: Half-Bridge Number of Drivers: 6 Gate Type: IGBT, MOSFET (N-Channel, P-Channel) Logic Voltage - VIL, VIH: 0.8V, 2.5V Current - Peak Output (Source, Sink): 200mA, 350mA Grade: Automotive Part Status: Obsolete DigiKey Programmable: Not Verified Qualification: AEC-Q100 |
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S29GL01GT11TFIV20 | Infineon Technologies |
Description: IC FLASH 1GBIT PARALLEL 56TSOPPackaging: Tray Package / Case: 56-TFSOP (0.724", 18.40mm Width) Mounting Type: Surface Mount Memory Size: 1Gbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.65V ~ 3.6V Technology: FLASH - NOR Memory Format: FLASH Supplier Device Package: 56-TSOP Part Status: Active Write Cycle Time - Word, Page: 60ns Memory Interface: Parallel Access Time: 110 ns Memory Organization: 128M x 8 DigiKey Programmable: Not Verified |
auf Bestellung 700 Stücke: Lieferzeit 10-14 Tag (e) |
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BGSC2341ML10E6327XTSA1 | Infineon Technologies |
Description: ANTENNA DEVICES PG-TSLP-10Packaging: Tape & Reel (TR) Package / Case: 10-XFLGA Mounting Type: Surface Mount Function: Digitally Tunable Capacitor, SPDT Frequency: 400MHz ~ 3.8GHz RF Type: General Purpose Secondary Attributes: MIPI Interface Supplier Device Package: PG-TSLP-10-2 Part Status: Active |
Produkt ist nicht verfügbar |
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BGSC2341ML10E6327XTSA1 | Infineon Technologies |
Description: ANTENNA DEVICES PG-TSLP-10Packaging: Cut Tape (CT) Package / Case: 10-XFLGA Mounting Type: Surface Mount Function: Digitally Tunable Capacitor, SPDT Frequency: 400MHz ~ 3.8GHz RF Type: General Purpose Secondary Attributes: MIPI Interface Supplier Device Package: PG-TSLP-10-2 Part Status: Active |
auf Bestellung 6629 Stücke: Lieferzeit 10-14 Tag (e) |
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REFFRIDGED111TMOSTOBO1 | Infineon Technologies |
Description: EVAL BOARD FOR IMD111T-6F040Packaging: Bulk Function: Motor Controller/Driver Type: Power Management Contents: Board(s) Utilized IC / Part: IMD111T-6F040 Supplied Contents: Board(s) Primary Attributes: Compressor Embedded: No Part Status: Active |
auf Bestellung 3 Stücke: Lieferzeit 10-14 Tag (e) |
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SAF-XC878-13FFA5VAC | Infineon Technologies |
Description: 8051 COMPATIBLE 8-BIT MCU |
auf Bestellung 496 Stücke: Lieferzeit 10-14 Tag (e) |
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CY7C1525V18-200BZXC | Infineon Technologies |
Description: IC SRAM 72MBIT PARALLEL 165FBGAPackaging: Tray Package / Case: 165-LBGA Mounting Type: Surface Mount Memory Size: 72Mbit Memory Type: Volatile Operating Temperature: 0°C ~ 70°C (TA) Voltage - Supply: 1.7V ~ 1.9V Technology: SRAM - Synchronous, QDR II Clock Frequency: 200 MHz Memory Format: SRAM Supplier Device Package: 165-FBGA (13x15) Memory Interface: Parallel Memory Organization: 8M x 9 DigiKey Programmable: Not Verified |
auf Bestellung 49 Stücke: Lieferzeit 10-14 Tag (e) |
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IPP65R190CFD7AAKSA1 | Infineon Technologies |
Description: MOSFET N-CH 650V 14A TO220-3Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 14A (Tc) Rds On (Max) @ Id, Vgs: 190mOhm @ 6.4A, 10V Power Dissipation (Max): 77W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 320µA Supplier Device Package: PG-TO220-3 Grade: Automotive Part Status: Active Vgs (Max): ±20V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1291 pF @ 400 V Qualification: AEC-Q101 |
auf Bestellung 668 Stücke: Lieferzeit 10-14 Tag (e) |
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IPP65R280C6XKSA1 | Infineon Technologies |
Description: MOSFET N-CH 650V 13.8A TO220-3Packaging: Bulk Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 13.8A (Tc) Rds On (Max) @ Id, Vgs: 280mOhm @ 4.4A, 10V Power Dissipation (Max): 104W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 440µA Supplier Device Package: PG-TO220-3 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 950 pF @ 100 V |
auf Bestellung 1500 Stücke: Lieferzeit 10-14 Tag (e) |
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IPP65R125C7 | Infineon Technologies |
Description: IPP65R125 - 650V AND 700V COOLMOPackaging: Bulk Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 18A (Tc) Rds On (Max) @ Id, Vgs: 125mOhm @ 8.9A, 10V Power Dissipation (Max): 101W (Tc) Vgs(th) (Max) @ Id: 4V @ 440µA Supplier Device Package: PG-TO220-3-1 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1670 pF @ 400 V |
Produkt ist nicht verfügbar |
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IPP65R420CFDXKSA1 | Infineon Technologies |
Description: MOSFET N-CH 650V 8.7A TO220-3Packaging: Bulk Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 8.7A (Tc) Rds On (Max) @ Id, Vgs: 420mOhm @ 3.4A, 10V Power Dissipation (Max): 83.3W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 340µA Supplier Device Package: PG-TO220-3 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 870 pF @ 100 V |
auf Bestellung 333 Stücke: Lieferzeit 10-14 Tag (e) |
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IPP65R190CFD7XKSA1 | Infineon Technologies |
Description: HIGH POWER_NEWPackaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 17.5A (Tc) Rds On (Max) @ Id, Vgs: 190mOhm @ 7.3A, 10V Power Dissipation (Max): 151W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 700µA Supplier Device Package: PG-TO220-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1850 pF @ 100 V |
auf Bestellung 888 Stücke: Lieferzeit 10-14 Tag (e) |
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IPP65R155CFD7XKSA1 | Infineon Technologies |
Description: HIGH POWER_NEWPackaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 15A (Tc) Rds On (Max) @ Id, Vgs: 155mOhm @ 6.4A, 10V Power Dissipation (Max): 77W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 320µA Supplier Device Package: PG-TO220-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1283 pF @ 400 V |
auf Bestellung 157 Stücke: Lieferzeit 10-14 Tag (e) |
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IPP65R090CFD7XKSA1 | Infineon Technologies |
Description: HIGH POWER_NEWPackaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 25A (Tc) Rds On (Max) @ Id, Vgs: 90mOhm @ 12.5A, 10V Power Dissipation (Max): 127W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 630µA Supplier Device Package: PG-TO220-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2513 pF @ 400 V |
auf Bestellung 190 Stücke: Lieferzeit 10-14 Tag (e) |
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IPP65R060CFD7XKSA1 | Infineon Technologies |
Description: 650V FET COOLMOS TO247Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 36A (Tc) Rds On (Max) @ Id, Vgs: 60mOhm @ 16.4A, 10V Power Dissipation (Max): 171W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 860µA Supplier Device Package: PG-TO220-3-1 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3288 pF @ 400 V |
auf Bestellung 304 Stücke: Lieferzeit 10-14 Tag (e) |
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BTT60302ERBXUMA1 | Infineon Technologies |
Description: IC PWR SWITCH N-CHAN 1:1 TDSO-14Packaging: Tape & Reel (TR) Package / Case: 14-SOIC (0.154", 3.90mm Width) Exposed Pad Output Type: N-Channel Mounting Type: Surface Mount Number of Outputs: 2 Interface: On/Off Switch Type: General Purpose Operating Temperature: -40°C ~ 150°C (TJ) Output Configuration: High Side Rds On (Typ): 32mOhm Input Type: Non-Inverting Voltage - Load: 5V ~ 36V Voltage - Supply (Vcc/Vdd): Not Required Current - Output (Max): 4A Ratio - Input:Output: 1:1 Supplier Device Package: PG-TDSO-14-31 Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, Over Voltage Grade: Automotive Part Status: Active Qualification: AEC-Q100 |
Produkt ist nicht verfügbar |
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BTT60501ERAXUMA1 | Infineon Technologies |
Description: IC PWR SWITCH N-CHAN 1:1 TDSO-14Packaging: Tape & Reel (TR) Package / Case: 14-SOIC (0.154", 3.90mm Width) Exposed Pad Output Type: N-Channel Mounting Type: Surface Mount Number of Outputs: 1 Interface: On/Off Switch Type: General Purpose Operating Temperature: -40°C ~ 150°C (TJ) Output Configuration: High Side Rds On (Typ): 50mOhm Input Type: Non-Inverting Voltage - Load: 5V ~ 36V Voltage - Supply (Vcc/Vdd): Not Required Current - Output (Max): 4.5A Ratio - Input:Output: 1:1 Supplier Device Package: PG-TDSO-14-11 Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, Over Voltage Grade: Automotive Part Status: Active Qualification: AEC-Q100 |
auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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BTS70302EPAXUMA1 | Infineon Technologies |
Description: IC PWR SWTCH N-CHAN 1:1 TSDSO-14Features: Slew Rate Controlled Packaging: Cut Tape (CT) Package / Case: 14-TSSOP (0.154", 3.90mm Width) Exposed Pad Output Type: N-Channel Mounting Type: Surface Mount Number of Outputs: 2 Interface: On/Off Switch Type: General Purpose Operating Temperature: -40°C ~ 150°C (TJ) Output Configuration: High Side Rds On (Typ): 14.5mOhm Input Type: Non-Inverting Voltage - Load: 6V ~ 18V Voltage - Supply (Vcc/Vdd): Not Required Current - Output (Max): 4.5A Ratio - Input:Output: 1:1 Supplier Device Package: PG-TSDSO-14-22 Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, Over Voltage, UVLO Grade: Automotive Part Status: Active Qualification: AEC-Q100 |
auf Bestellung 5290 Stücke: Lieferzeit 10-14 Tag (e) |
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BTS70081EPPXUMA1 | Infineon Technologies |
Description: IC PWR SWTCH N-CHAN 1:1 TSDSO-14Packaging: Cut Tape (CT) Package / Case: 14-TSSOP (0.154", 3.90mm Width) Exposed Pad Output Type: N-Channel Mounting Type: Surface Mount Number of Outputs: 1 Interface: On/Off Switch Type: General Purpose Operating Temperature: -40°C ~ 150°C (TJ) Output Configuration: High Side Rds On (Typ): 8.8mOhm Input Type: Non-Inverting Voltage - Load: 6V ~ 18V Voltage - Supply (Vcc/Vdd): Not Required Current - Output (Max): 11A Ratio - Input:Output: 1:1 Supplier Device Package: PG-TSDSO-14-22 Fault Protection: Over Current, Over Voltage, Short Circuit, UVLO Grade: Automotive Part Status: Active Qualification: AEC-Q100 |
auf Bestellung 14051 Stücke: Lieferzeit 10-14 Tag (e) |
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BTS70081EPAXUMA1 | Infineon Technologies |
Description: IC PWR SWTCH N-CHAN 1:1 TSDSO-14Packaging: Tape & Reel (TR) Package / Case: 14-TSSOP (0.154", 3.90mm Width) Exposed Pad Output Type: N-Channel Mounting Type: Surface Mount Number of Outputs: 1 Interface: On/Off Switch Type: General Purpose Operating Temperature: -40°C ~ 150°C (TJ) Output Configuration: High Side Rds On (Typ): 9mOhm Input Type: Non-Inverting Voltage - Load: 6V ~ 18V Voltage - Supply (Vcc/Vdd): Not Required Current - Output (Max): 10A Ratio - Input:Output: 1:1 Supplier Device Package: PG-TSDSO-14-22 Fault Protection: Over Current, Over Voltage, Short Circuit, UVLO Grade: Automotive Part Status: Active Qualification: AEC-Q100 |
auf Bestellung 9000 Stücke: Lieferzeit 10-14 Tag (e) |
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BTS5012SDA | Infineon Technologies |
Description: BTS5012 - PROFET - SMART HIGH SI |
Produkt ist nicht verfügbar |
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FF450R08A03P2XKSA1 | Infineon Technologies |
Description: IGBT MODULEPackaging: Tube Package / Case: Module Mounting Type: Chassis Mount Type: IGBT Configuration: Half Bridge Voltage - Isolation: 2500Vrms Current: 450 A Voltage: 750 V |
auf Bestellung 174 Stücke: Lieferzeit 10-14 Tag (e) |
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CY7C1168V18-400BZXC | Infineon Technologies |
Description: IC SRAM 18MBIT PARALLEL 165FBGA Packaging: Tray Package / Case: 165-LBGA Mounting Type: Surface Mount Memory Size: 18Mbit Memory Type: Volatile Operating Temperature: 0°C ~ 70°C (TA) Voltage - Supply: 1.7V ~ 1.9V Technology: SRAM - Synchronous, DDR II Clock Frequency: 400 MHz Memory Format: SRAM Supplier Device Package: 165-FBGA (13x15) Part Status: Obsolete Memory Interface: Parallel Memory Organization: 1M x 18 DigiKey Programmable: Not Verified |
auf Bestellung 602 Stücke: Lieferzeit 10-14 Tag (e) |
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PEB8191HDV1.1 | Infineon Technologies | Description: INTELLIGENT NTC-Q NETWORK TERMI |
auf Bestellung 23301 Stücke: Lieferzeit 10-14 Tag (e) |
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| PEB8191HV1.1 | Infineon Technologies | Description: NETWORK TERMINATION CONTROLLER |
auf Bestellung 16128 Stücke: Lieferzeit 10-14 Tag (e) |
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| PEB8191FGDV1.1 | Infineon Technologies | Description: NETWORK TERMINATION CONTROLLER |
auf Bestellung 3800 Stücke: Lieferzeit 10-14 Tag (e) |
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| MB89663PF-GT-198-BNDE1 | Infineon Technologies |
Description: IC MCU 8BIT 8KB MROM 64QFP Packaging: Tray Package / Case: 64-BQFP Mounting Type: Surface Mount Speed: 10MHz Program Memory Size: 8KB (8K x 8) RAM Size: 256 x 8 Operating Temperature: -40°C ~ 85°C (TA) Oscillator Type: External Program Memory Type: Mask ROM Core Processor: F²MC-8L Data Converters: A/D 8x8b Core Size: 8-Bit Voltage - Supply (Vcc/Vdd): 2.2V ~ 6V Connectivity: Serial I/O, UART/USART Peripherals: POR, PWM, WDT Supplier Device Package: 64-QFP (14x20) Part Status: Obsolete Number of I/O: 36 DigiKey Programmable: Not Verified |
Produkt ist nicht verfügbar |
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IPG20N04S412ATMA1 | Infineon Technologies |
Description: MOSFET 2N-CH 40V 20A 8TDSONPackaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 41W Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 20A Input Capacitance (Ciss) (Max) @ Vds: 1470pF @ 25V Rds On (Max) @ Id, Vgs: 12.2mOhm @ 17A, 10V Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V Vgs(th) (Max) @ Id: 4V @ 15µA Supplier Device Package: PG-TDSON-8-4 Grade: Automotive Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |
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SPD07N60S5AATMA1 | Infineon Technologies |
Description: SPD07N60S5 - COOL MOS POWER MOSF |
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SPP20N60C3 | Infineon Technologies |
Description: POWER FIELD-EFFECT TRANSISTOR, 2Packaging: Bulk Part Status: Active |
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ETT480N22P60HPSA1 | Infineon Technologies |
Description: SCR MODULE 2.2KV 700A MODULEPackaging: Tray Package / Case: Module Mounting Type: Chassis Mount Operating Temperature: -40°C ~ 135°C (TC) Structure: Series Connection - All SCRs Current - Hold (Ih) (Max): 300 mA Current - Gate Trigger (Igt) (Max): 250 mA Current - Non Rep. Surge 50, 60Hz (Itsm): 14700A @ 50Hz Number of SCRs, Diodes: 2 SCRs Current - On State (It (AV)) (Max): 480 A Voltage - Gate Trigger (Vgt) (Max): 2.2 V Part Status: Obsolete Current - On State (It (RMS)) (Max): 700 A Voltage - Off State: 2.2 kV |
Produkt ist nicht verfügbar |
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TLE9278BQXV33XUMA1 | Infineon Technologies |
Description: BODY SYSTEM ICS |
Produkt ist nicht verfügbar |
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TLE9278BQXXUMA1 | Infineon Technologies |
Description: BODY SYSTEM ICS |
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TLE8718SAAUMA4 | Infineon Technologies |
Description: IC PWR SWITCH N-CH 1:18 DSO-36Packaging: Tape & Reel (TR) Package / Case: 36-BSSOP (0.433", 11.00mm Width) Exposed Pad Output Type: N-Channel Mounting Type: Surface Mount Number of Outputs: 18 Switch Type: General Purpose Operating Temperature: -40°C ~ 150°C (TJ) Output Configuration: Low Side Voltage - Load: 4.5V ~ 5.5V Ratio - Input:Output: 1:18 Supplier Device Package: PG-DSO-36-54 Fault Protection: Over Temperature, Short Circuit, UVLO Grade: Automotive Part Status: Active |
Produkt ist nicht verfügbar |
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TLE824533SAAUMA1 | Infineon Technologies |
Description: IC PWR DRIVER N-CHAN 1:3 DSO-36Features: Status Flag Packaging: Tape & Reel (TR) Package / Case: 36-BSSOP (0.433", 11.00mm Width) Exposed Pad Output Type: N-Channel Mounting Type: Surface Mount Number of Outputs: 3 Interface: SPI Switch Type: Relay, Solenoid Driver Operating Temperature: -40°C ~ 150°C (TJ) Output Configuration: High Side or Low Side Rds On (Typ): 250mOhm (Max) Voltage - Load: 8V ~ 17V Voltage - Supply (Vcc/Vdd): 4.75V ~ 5.25V Current - Output (Max): 1.5A Ratio - Input:Output: 1:3 Supplier Device Package: PG-DSO-36-54 Fault Protection: Current Limiting (Fixed), Over Temperature Part Status: Not For New Designs |
Produkt ist nicht verfügbar |
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IAUC100N10S5N040ATMA1 | Infineon Technologies |
Description: MOSFET N-CH 100V 100A 8TDSON-34Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Rds On (Max) @ Id, Vgs: 4mOhm @ 50A, 10V Power Dissipation (Max): 167W (Tc) Vgs(th) (Max) @ Id: 3.8V @ 90µA Supplier Device Package: PG-TDSON-8-34 Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 78 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5200 pF @ 50 V Qualification: AEC-Q101 |
auf Bestellung 3673 Stücke: Lieferzeit 10-14 Tag (e) |
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BSZ084N08NS5ATMA1 | Infineon Technologies |
Description: MOSFET N-CH 80V 40A TSDSONPackaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 40A (Tc) Rds On (Max) @ Id, Vgs: 8.4mOhm @ 20A, 10V Power Dissipation (Max): 63W (Tc) Vgs(th) (Max) @ Id: 3.8V @ 31µA Supplier Device Package: PG-TSDSON-8-FL Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1820 pF @ 40 V |
auf Bestellung 34017 Stücke: Lieferzeit 10-14 Tag (e) |
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IPB65R600C6 | Infineon Technologies |
Description: N-CHANNEL POWER MOSFETPackaging: Bulk Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 7.3A (Tc) Rds On (Max) @ Id, Vgs: 600mOhm @ 2.1A, 10V Power Dissipation (Max): 63W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 210µA Supplier Device Package: PG-TO263-3-2 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 440 pF @ 100 V |
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IPI65R600C6 | Infineon Technologies |
Description: N-CHANNEL POWER MOSFETPackaging: Bulk Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 7.3A (Tc) Rds On (Max) @ Id, Vgs: 600mOhm @ 2.1A, 10V Power Dissipation (Max): 63W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 210µA Supplier Device Package: PG-TO262-3-1 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 440 pF @ 100 V |
Produkt ist nicht verfügbar |
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BGM15MA12E6327XTSA1 | Infineon Technologies |
Description: IC AMP LTE 1.7GHZ-2.2GHZ 12ATSLPPackaging: Bulk Package / Case: 12-UFQFN Exposed Pad Mounting Type: Surface Mount Frequency: 1.7GHz ~ 2.2GHz RF Type: LTE, W-CDMA Voltage - Supply: 2.2V ~ 3.3V Gain: 17dB Current - Supply: 4.9mA Noise Figure: 1.8dB P1dB: -8dBm Test Frequency: 2.11GHz ~ 2.17GHz Supplier Device Package: ATSLP-12-3 Part Status: Obsolete |
auf Bestellung 252000 Stücke: Lieferzeit 10-14 Tag (e) |
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| PBL387821QSD | Infineon Technologies |
Description: FLEXISLIC SLIC Packaging: Bulk Part Status: Active |
auf Bestellung 7776 Stücke: Lieferzeit 10-14 Tag (e) |
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| PBL38780/1QSD | Infineon Technologies |
Description: FLEXISLIC SLIC Packaging: Bulk Part Status: Active |
auf Bestellung 24248 Stücke: Lieferzeit 10-14 Tag (e) |
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| PBL38627/2SOTR2B | Infineon Technologies |
Description: FLEXISLIC SLIC Packaging: Bulk |
auf Bestellung 6250 Stücke: Lieferzeit 10-14 Tag (e) |
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TLE9221SX | Infineon Technologies |
Description: TLE9221 - AUTOMOTIVE FLEXRAY TRA Packaging: Bulk Package / Case: 16-SSOP (0.209", 5.30mm Width) Mounting Type: Surface Mount Type: Transceiver Operating Temperature: -40°C ~ 125°C (TA) Voltage - Supply: 4.75V ~ 5.25V Number of Drivers/Receivers: 1/1 Data Rate: 10Mbps Protocol: FlexRay Supplier Device Package: PG-SSOP16-2 Receiver Hysteresis: 100 mV Duplex: Half Part Status: Active |
Produkt ist nicht verfügbar |
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TLD55411QVXUMA1 | Infineon Technologies |
Description: IC LED DRIVER CTRLR PWM 48VQFNPackaging: Bulk Package / Case: 48-VFQFN Exposed Pad Voltage - Output: 55V Mounting Type: Surface Mount Number of Outputs: 1 Frequency: 200kHz ~ 700kHz Type: DC DC Controller Operating Temperature: -40°C ~ 150°C (TJ) Internal Switch(s): No Topology: Step-Down (Buck), Step-Up (Boost) Supplier Device Package: PG-VQFN-48-31 Dimming: Analog, PWM Voltage - Supply (Min): 4.5V Voltage - Supply (Max): 40V Grade: Automotive |
auf Bestellung 98085 Stücke: Lieferzeit 10-14 Tag (e) |
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| IKB20N60TAATMA1372 | Infineon Technologies |
Description: IKB20N60 - AUTOMOTIVE IGBT DISCRPackaging: Bulk Part Status: Active |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
| TLE98722QXA40XUMA1 | Infineon Technologies |
Description: EMBEDDED POWERPackaging: Tape & Reel (TR) Package / Case: 48-VFQFN Exposed Pad Mounting Type: Surface Mount Interface: LINbus, SPI, SSC, UART/USART RAM Size: 8K x 8 Operating Temperature: -40°C ~ 150°C (TJ) Voltage - Supply: 5.5V ~ 27V Controller Series: TLE987x Program Memory Type: FLASH (256kB) Core Processor: ARM® Cortex®-M3 Supplier Device Package: PG-VQFN-48-29 Grade: Automotive Part Status: Active Number of I/O: 10 DigiKey Programmable: Not Verified Qualification: AEC-Q100 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
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BBY5303WE6327HTSA1 | Infineon Technologies |
Description: DIODE VARACTOR 6V SGL SOD323-2Packaging: Tape & Reel (TR) Package / Case: SC-76, SOD-323 Mounting Type: Surface Mount Diode Type: Single Operating Temperature: -55°C ~ 125°C (TJ) Capacitance @ Vr, F: 3.1pF @ 3V, 1MHz Capacitance Ratio Condition: C1/C3 Supplier Device Package: PG-SOD323-3D Voltage - Peak Reverse (Max): 6 V Capacitance Ratio: 2.6 |
auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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MMBTA56LT1 | Infineon Technologies |
Description: TRANS PNP 80V 0.5A SOT23-3Packaging: Bulk Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: PNP Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA Current - Collector Cutoff (Max): 100nA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 1V Frequency - Transition: 50MHz Supplier Device Package: SOT-23-3 (TO-236) Part Status: Active Current - Collector (Ic) (Max): 500 mA Voltage - Collector Emitter Breakdown (Max): 80 V Power - Max: 225 mW |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| SPS04N60C3E8177AKMA1 | Infineon Technologies |
Description: LOW POWER_LEGACYPackaging: Bulk Part Status: Active |
auf Bestellung 4500 Stücke: Lieferzeit 10-14 Tag (e) |
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| FS150R12KT4PB51BPSA1 | Infineon Technologies |
Description: FS150R12 - IGBT MODULEPackaging: Bulk |
auf Bestellung 36 Stücke: Lieferzeit 10-14 Tag (e) |
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| IRNBPS2 | Infineon Technologies | Description: KIT DESGN W/PWR SUPP DUAL FETKY |
Produkt ist nicht verfügbar |
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S25FS064SDSBHV020 | Infineon Technologies |
Description: IC FLASH 64MBIT SPI/QUAD 24BGAPackaging: Bulk Package / Case: 24-TBGA Mounting Type: Surface Mount Memory Size: 64Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 105°C (TA) Voltage - Supply: 1.7V ~ 2V Technology: FLASH - NOR Clock Frequency: 80 MHz Memory Format: FLASH Supplier Device Package: 24-BGA (8x6) Part Status: Active Memory Interface: SPI - Quad I/O Memory Organization: 8M x 8 |
auf Bestellung 230 Stücke: Lieferzeit 10-14 Tag (e) |
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S25FS064SDSBHN020 | Infineon Technologies |
Description: IC FLASH 64MBIT SPI/QUAD 24BGAPackaging: Bulk Package / Case: 24-TBGA Mounting Type: Surface Mount Memory Size: 64Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 125°C (TA) Voltage - Supply: 1.7V ~ 2V Technology: FLASH - NOR Clock Frequency: 80 MHz Memory Format: FLASH Supplier Device Package: 24-BGA (8x6) Part Status: Active Memory Interface: SPI - Quad I/O Memory Organization: 8M x 8 |
auf Bestellung 240 Stücke: Lieferzeit 10-14 Tag (e) |
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PXB4219EV3.3 | Infineon Technologies | Description: INTERWORKING ELEMENT FOR 8 E1/T1 |
auf Bestellung 75 Stücke: Lieferzeit 10-14 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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PXB4220EV3.3 | Infineon Technologies | Description: INTERWORKING ELEMENT FOR 8 E1/T1 |
auf Bestellung 508 Stücke: Lieferzeit 10-14 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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PXB4221EV3.3 | Infineon Technologies | Description: INTERWORKING ELEMENT FOR 8 E1/T1 |
auf Bestellung 56 Stücke: Lieferzeit 10-14 Tag (e) |
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PEB2047-16NMTSL | Infineon Technologies |
Description: IC MEMORY 44PLCCPackaging: Bulk Package / Case: 44-LCC (J-Lead) Mounting Type: Surface Mount Type: Memory Supplier Device Package: 44-PLCC (16.6x16.6) DigiKey Programmable: Not Verified |
auf Bestellung 1098 Stücke: Lieferzeit 10-14 Tag (e) |
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PEB2047-1BNMTSL | Infineon Technologies |
Description: IC MEMORY 44PLCCPackaging: Bulk Package / Case: 44-LCC (J-Lead) Mounting Type: Surface Mount Type: Memory Supplier Device Package: 44-PLCC (16.6x16.6) DigiKey Programmable: Not Verified |
auf Bestellung 456 Stücke: Lieferzeit 10-14 Tag (e) |
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ESD201B203LRHE6327XTSA1 | Infineon Technologies |
Description: TVS DIODE 5.5VWM 12.1V PGTSLP3Packaging: Bulk Package / Case: SC-101, SOT-883 Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 125°C (TJ) Applications: General Purpose Capacitance @ Frequency: 5pF @ 1MHz Current - Peak Pulse (10/1000µs): 16A (8/20µs) Voltage - Reverse Standoff (Typ): 5.5V (Max) Supplier Device Package: PG-TSLP-3 Bidirectional Channels: 2 Voltage - Clamping (Max) @ Ipp: 12.1V (Typ) Power Line Protection: No Part Status: Obsolete |
auf Bestellung 760856 Stücke: Lieferzeit 10-14 Tag (e) |
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| AUIRS2336STR |
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Hersteller: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 28SOIC
Packaging: Tape & Reel (TR)
Package / Case: 28-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 28-SOIC
Rise / Fall Time (Typ): 125ns, 50ns
Channel Type: 3-Phase
Driven Configuration: Half-Bridge
Number of Drivers: 6
Gate Type: IGBT, MOSFET (N-Channel, P-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Current - Peak Output (Source, Sink): 200mA, 350mA
Grade: Automotive
Part Status: Obsolete
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
Description: IC GATE DRVR HALF-BRIDGE 28SOIC
Packaging: Tape & Reel (TR)
Package / Case: 28-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 28-SOIC
Rise / Fall Time (Typ): 125ns, 50ns
Channel Type: 3-Phase
Driven Configuration: Half-Bridge
Number of Drivers: 6
Gate Type: IGBT, MOSFET (N-Channel, P-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Current - Peak Output (Source, Sink): 200mA, 350mA
Grade: Automotive
Part Status: Obsolete
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| S29GL01GT11TFIV20 |
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Hersteller: Infineon Technologies
Description: IC FLASH 1GBIT PARALLEL 56TSOP
Packaging: Tray
Package / Case: 56-TFSOP (0.724", 18.40mm Width)
Mounting Type: Surface Mount
Memory Size: 1Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.65V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 56-TSOP
Part Status: Active
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 110 ns
Memory Organization: 128M x 8
DigiKey Programmable: Not Verified
Description: IC FLASH 1GBIT PARALLEL 56TSOP
Packaging: Tray
Package / Case: 56-TFSOP (0.724", 18.40mm Width)
Mounting Type: Surface Mount
Memory Size: 1Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.65V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 56-TSOP
Part Status: Active
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 110 ns
Memory Organization: 128M x 8
DigiKey Programmable: Not Verified
auf Bestellung 700 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 1+ | 22.97 EUR |
| 10+ | 21.31 EUR |
| 25+ | 20.64 EUR |
| 91+ | 19.71 EUR |
| 182+ | 19.22 EUR |
| 273+ | 18.94 EUR |
| 546+ | 18.46 EUR |
| BGSC2341ML10E6327XTSA1 |
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Hersteller: Infineon Technologies
Description: ANTENNA DEVICES PG-TSLP-10
Packaging: Tape & Reel (TR)
Package / Case: 10-XFLGA
Mounting Type: Surface Mount
Function: Digitally Tunable Capacitor, SPDT
Frequency: 400MHz ~ 3.8GHz
RF Type: General Purpose
Secondary Attributes: MIPI Interface
Supplier Device Package: PG-TSLP-10-2
Part Status: Active
Description: ANTENNA DEVICES PG-TSLP-10
Packaging: Tape & Reel (TR)
Package / Case: 10-XFLGA
Mounting Type: Surface Mount
Function: Digitally Tunable Capacitor, SPDT
Frequency: 400MHz ~ 3.8GHz
RF Type: General Purpose
Secondary Attributes: MIPI Interface
Supplier Device Package: PG-TSLP-10-2
Part Status: Active
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BGSC2341ML10E6327XTSA1 |
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Hersteller: Infineon Technologies
Description: ANTENNA DEVICES PG-TSLP-10
Packaging: Cut Tape (CT)
Package / Case: 10-XFLGA
Mounting Type: Surface Mount
Function: Digitally Tunable Capacitor, SPDT
Frequency: 400MHz ~ 3.8GHz
RF Type: General Purpose
Secondary Attributes: MIPI Interface
Supplier Device Package: PG-TSLP-10-2
Part Status: Active
Description: ANTENNA DEVICES PG-TSLP-10
Packaging: Cut Tape (CT)
Package / Case: 10-XFLGA
Mounting Type: Surface Mount
Function: Digitally Tunable Capacitor, SPDT
Frequency: 400MHz ~ 3.8GHz
RF Type: General Purpose
Secondary Attributes: MIPI Interface
Supplier Device Package: PG-TSLP-10-2
Part Status: Active
auf Bestellung 6629 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 15+ | 1.21 EUR |
| 21+ | 0.86 EUR |
| 25+ | 0.77 EUR |
| 100+ | 0.67 EUR |
| 250+ | 0.63 EUR |
| 500+ | 0.6 EUR |
| 1000+ | 0.58 EUR |
| 2500+ | 0.55 EUR |
| REFFRIDGED111TMOSTOBO1 |
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Hersteller: Infineon Technologies
Description: EVAL BOARD FOR IMD111T-6F040
Packaging: Bulk
Function: Motor Controller/Driver
Type: Power Management
Contents: Board(s)
Utilized IC / Part: IMD111T-6F040
Supplied Contents: Board(s)
Primary Attributes: Compressor
Embedded: No
Part Status: Active
Description: EVAL BOARD FOR IMD111T-6F040
Packaging: Bulk
Function: Motor Controller/Driver
Type: Power Management
Contents: Board(s)
Utilized IC / Part: IMD111T-6F040
Supplied Contents: Board(s)
Primary Attributes: Compressor
Embedded: No
Part Status: Active
auf Bestellung 3 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 1+ | 313.12 EUR |
| SAF-XC878-13FFA5VAC |
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Hersteller: Infineon Technologies
Description: 8051 COMPATIBLE 8-BIT MCU
Description: 8051 COMPATIBLE 8-BIT MCU
auf Bestellung 496 Stücke:
Lieferzeit 10-14 Tag (e)Im Einkaufswagen Stück im Wert von UAH
| CY7C1525V18-200BZXC |
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Hersteller: Infineon Technologies
Description: IC SRAM 72MBIT PARALLEL 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 72Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, QDR II
Clock Frequency: 200 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (13x15)
Memory Interface: Parallel
Memory Organization: 8M x 9
DigiKey Programmable: Not Verified
Description: IC SRAM 72MBIT PARALLEL 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 72Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, QDR II
Clock Frequency: 200 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (13x15)
Memory Interface: Parallel
Memory Organization: 8M x 9
DigiKey Programmable: Not Verified
auf Bestellung 49 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 3+ | 217.17 EUR |
| IPP65R190CFD7AAKSA1 |
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Hersteller: Infineon Technologies
Description: MOSFET N-CH 650V 14A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 6.4A, 10V
Power Dissipation (Max): 77W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 320µA
Supplier Device Package: PG-TO220-3
Grade: Automotive
Part Status: Active
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1291 pF @ 400 V
Qualification: AEC-Q101
Description: MOSFET N-CH 650V 14A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 6.4A, 10V
Power Dissipation (Max): 77W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 320µA
Supplier Device Package: PG-TO220-3
Grade: Automotive
Part Status: Active
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1291 pF @ 400 V
Qualification: AEC-Q101
auf Bestellung 668 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 4+ | 4.75 EUR |
| 50+ | 2.42 EUR |
| 100+ | 2.35 EUR |
| IPP65R280C6XKSA1 |
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Hersteller: Infineon Technologies
Description: MOSFET N-CH 650V 13.8A TO220-3
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13.8A (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 4.4A, 10V
Power Dissipation (Max): 104W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 440µA
Supplier Device Package: PG-TO220-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 950 pF @ 100 V
Description: MOSFET N-CH 650V 13.8A TO220-3
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13.8A (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 4.4A, 10V
Power Dissipation (Max): 104W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 440µA
Supplier Device Package: PG-TO220-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 950 pF @ 100 V
auf Bestellung 1500 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 224+ | 2.02 EUR |
| IPP65R125C7 |
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Hersteller: Infineon Technologies
Description: IPP65R125 - 650V AND 700V COOLMO
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 125mOhm @ 8.9A, 10V
Power Dissipation (Max): 101W (Tc)
Vgs(th) (Max) @ Id: 4V @ 440µA
Supplier Device Package: PG-TO220-3-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1670 pF @ 400 V
Description: IPP65R125 - 650V AND 700V COOLMO
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 125mOhm @ 8.9A, 10V
Power Dissipation (Max): 101W (Tc)
Vgs(th) (Max) @ Id: 4V @ 440µA
Supplier Device Package: PG-TO220-3-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1670 pF @ 400 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IPP65R420CFDXKSA1 |
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Hersteller: Infineon Technologies
Description: MOSFET N-CH 650V 8.7A TO220-3
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.7A (Tc)
Rds On (Max) @ Id, Vgs: 420mOhm @ 3.4A, 10V
Power Dissipation (Max): 83.3W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 340µA
Supplier Device Package: PG-TO220-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 870 pF @ 100 V
Description: MOSFET N-CH 650V 8.7A TO220-3
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.7A (Tc)
Rds On (Max) @ Id, Vgs: 420mOhm @ 3.4A, 10V
Power Dissipation (Max): 83.3W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 340µA
Supplier Device Package: PG-TO220-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 870 pF @ 100 V
auf Bestellung 333 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 333+ | 1.87 EUR |
| IPP65R190CFD7XKSA1 |
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Hersteller: Infineon Technologies
Description: HIGH POWER_NEW
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17.5A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 7.3A, 10V
Power Dissipation (Max): 151W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 700µA
Supplier Device Package: PG-TO220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1850 pF @ 100 V
Description: HIGH POWER_NEW
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17.5A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 7.3A, 10V
Power Dissipation (Max): 151W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 700µA
Supplier Device Package: PG-TO220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1850 pF @ 100 V
auf Bestellung 888 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 4+ | 5.24 EUR |
| 50+ | 2.67 EUR |
| 100+ | 2.51 EUR |
| 500+ | 2.04 EUR |
| IPP65R155CFD7XKSA1 |
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Hersteller: Infineon Technologies
Description: HIGH POWER_NEW
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 155mOhm @ 6.4A, 10V
Power Dissipation (Max): 77W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 320µA
Supplier Device Package: PG-TO220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1283 pF @ 400 V
Description: HIGH POWER_NEW
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 155mOhm @ 6.4A, 10V
Power Dissipation (Max): 77W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 320µA
Supplier Device Package: PG-TO220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1283 pF @ 400 V
auf Bestellung 157 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 4+ | 4.91 EUR |
| 50+ | 3.89 EUR |
| 100+ | 3.34 EUR |
| IPP65R090CFD7XKSA1 |
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Hersteller: Infineon Technologies
Description: HIGH POWER_NEW
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Rds On (Max) @ Id, Vgs: 90mOhm @ 12.5A, 10V
Power Dissipation (Max): 127W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 630µA
Supplier Device Package: PG-TO220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2513 pF @ 400 V
Description: HIGH POWER_NEW
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Rds On (Max) @ Id, Vgs: 90mOhm @ 12.5A, 10V
Power Dissipation (Max): 127W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 630µA
Supplier Device Package: PG-TO220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2513 pF @ 400 V
auf Bestellung 190 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 2+ | 9.49 EUR |
| 50+ | 5.01 EUR |
| 100+ | 4.58 EUR |
| IPP65R060CFD7XKSA1 |
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Hersteller: Infineon Technologies
Description: 650V FET COOLMOS TO247
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
Rds On (Max) @ Id, Vgs: 60mOhm @ 16.4A, 10V
Power Dissipation (Max): 171W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 860µA
Supplier Device Package: PG-TO220-3-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3288 pF @ 400 V
Description: 650V FET COOLMOS TO247
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
Rds On (Max) @ Id, Vgs: 60mOhm @ 16.4A, 10V
Power Dissipation (Max): 171W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 860µA
Supplier Device Package: PG-TO220-3-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3288 pF @ 400 V
auf Bestellung 304 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 2+ | 11.16 EUR |
| 50+ | 6.29 EUR |
| 100+ | 5.91 EUR |
| BTT60302ERBXUMA1 |
![]() |
Hersteller: Infineon Technologies
Description: IC PWR SWITCH N-CHAN 1:1 TDSO-14
Packaging: Tape & Reel (TR)
Package / Case: 14-SOIC (0.154", 3.90mm Width) Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 2
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 32mOhm
Input Type: Non-Inverting
Voltage - Load: 5V ~ 36V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 4A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-TDSO-14-31
Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, Over Voltage
Grade: Automotive
Part Status: Active
Qualification: AEC-Q100
Description: IC PWR SWITCH N-CHAN 1:1 TDSO-14
Packaging: Tape & Reel (TR)
Package / Case: 14-SOIC (0.154", 3.90mm Width) Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 2
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 32mOhm
Input Type: Non-Inverting
Voltage - Load: 5V ~ 36V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 4A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-TDSO-14-31
Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, Over Voltage
Grade: Automotive
Part Status: Active
Qualification: AEC-Q100
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BTT60501ERAXUMA1 |
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Hersteller: Infineon Technologies
Description: IC PWR SWITCH N-CHAN 1:1 TDSO-14
Packaging: Tape & Reel (TR)
Package / Case: 14-SOIC (0.154", 3.90mm Width) Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 50mOhm
Input Type: Non-Inverting
Voltage - Load: 5V ~ 36V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 4.5A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-TDSO-14-11
Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, Over Voltage
Grade: Automotive
Part Status: Active
Qualification: AEC-Q100
Description: IC PWR SWITCH N-CHAN 1:1 TDSO-14
Packaging: Tape & Reel (TR)
Package / Case: 14-SOIC (0.154", 3.90mm Width) Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 50mOhm
Input Type: Non-Inverting
Voltage - Load: 5V ~ 36V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 4.5A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-TDSO-14-11
Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, Over Voltage
Grade: Automotive
Part Status: Active
Qualification: AEC-Q100
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 3000+ | 2.05 EUR |
| BTS70302EPAXUMA1 |
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Hersteller: Infineon Technologies
Description: IC PWR SWTCH N-CHAN 1:1 TSDSO-14
Features: Slew Rate Controlled
Packaging: Cut Tape (CT)
Package / Case: 14-TSSOP (0.154", 3.90mm Width) Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 2
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 14.5mOhm
Input Type: Non-Inverting
Voltage - Load: 6V ~ 18V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 4.5A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-TSDSO-14-22
Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, Over Voltage, UVLO
Grade: Automotive
Part Status: Active
Qualification: AEC-Q100
Description: IC PWR SWTCH N-CHAN 1:1 TSDSO-14
Features: Slew Rate Controlled
Packaging: Cut Tape (CT)
Package / Case: 14-TSSOP (0.154", 3.90mm Width) Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 2
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 14.5mOhm
Input Type: Non-Inverting
Voltage - Load: 6V ~ 18V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 4.5A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-TSDSO-14-22
Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, Over Voltage, UVLO
Grade: Automotive
Part Status: Active
Qualification: AEC-Q100
auf Bestellung 5290 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 7+ | 2.59 EUR |
| 10+ | 1.89 EUR |
| 25+ | 1.72 EUR |
| 100+ | 1.53 EUR |
| 250+ | 1.44 EUR |
| 500+ | 1.39 EUR |
| 1000+ | 1.34 EUR |
| BTS70081EPPXUMA1 |
![]() |
Hersteller: Infineon Technologies
Description: IC PWR SWTCH N-CHAN 1:1 TSDSO-14
Packaging: Cut Tape (CT)
Package / Case: 14-TSSOP (0.154", 3.90mm Width) Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 8.8mOhm
Input Type: Non-Inverting
Voltage - Load: 6V ~ 18V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 11A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-TSDSO-14-22
Fault Protection: Over Current, Over Voltage, Short Circuit, UVLO
Grade: Automotive
Part Status: Active
Qualification: AEC-Q100
Description: IC PWR SWTCH N-CHAN 1:1 TSDSO-14
Packaging: Cut Tape (CT)
Package / Case: 14-TSSOP (0.154", 3.90mm Width) Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 8.8mOhm
Input Type: Non-Inverting
Voltage - Load: 6V ~ 18V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 11A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-TSDSO-14-22
Fault Protection: Over Current, Over Voltage, Short Circuit, UVLO
Grade: Automotive
Part Status: Active
Qualification: AEC-Q100
auf Bestellung 14051 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 7+ | 2.59 EUR |
| 10+ | 1.89 EUR |
| 25+ | 1.72 EUR |
| 100+ | 1.53 EUR |
| 250+ | 1.44 EUR |
| 500+ | 1.39 EUR |
| 1000+ | 1.34 EUR |
| BTS70081EPAXUMA1 |
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Hersteller: Infineon Technologies
Description: IC PWR SWTCH N-CHAN 1:1 TSDSO-14
Packaging: Tape & Reel (TR)
Package / Case: 14-TSSOP (0.154", 3.90mm Width) Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 9mOhm
Input Type: Non-Inverting
Voltage - Load: 6V ~ 18V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 10A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-TSDSO-14-22
Fault Protection: Over Current, Over Voltage, Short Circuit, UVLO
Grade: Automotive
Part Status: Active
Qualification: AEC-Q100
Description: IC PWR SWTCH N-CHAN 1:1 TSDSO-14
Packaging: Tape & Reel (TR)
Package / Case: 14-TSSOP (0.154", 3.90mm Width) Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 9mOhm
Input Type: Non-Inverting
Voltage - Load: 6V ~ 18V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 10A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-TSDSO-14-22
Fault Protection: Over Current, Over Voltage, Short Circuit, UVLO
Grade: Automotive
Part Status: Active
Qualification: AEC-Q100
auf Bestellung 9000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 3000+ | 1.11 EUR |
| BTS5012SDA |
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Hersteller: Infineon Technologies
Description: BTS5012 - PROFET - SMART HIGH SI
Description: BTS5012 - PROFET - SMART HIGH SI
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FF450R08A03P2XKSA1 |
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Hersteller: Infineon Technologies
Description: IGBT MODULE
Packaging: Tube
Package / Case: Module
Mounting Type: Chassis Mount
Type: IGBT
Configuration: Half Bridge
Voltage - Isolation: 2500Vrms
Current: 450 A
Voltage: 750 V
Description: IGBT MODULE
Packaging: Tube
Package / Case: Module
Mounting Type: Chassis Mount
Type: IGBT
Configuration: Half Bridge
Voltage - Isolation: 2500Vrms
Current: 450 A
Voltage: 750 V
auf Bestellung 174 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 1+ | 241.14 EUR |
| CY7C1168V18-400BZXC |
Hersteller: Infineon Technologies
Description: IC SRAM 18MBIT PARALLEL 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 18Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, DDR II
Clock Frequency: 400 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (13x15)
Part Status: Obsolete
Memory Interface: Parallel
Memory Organization: 1M x 18
DigiKey Programmable: Not Verified
Description: IC SRAM 18MBIT PARALLEL 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 18Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, DDR II
Clock Frequency: 400 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (13x15)
Part Status: Obsolete
Memory Interface: Parallel
Memory Organization: 1M x 18
DigiKey Programmable: Not Verified
auf Bestellung 602 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 8+ | 70.98 EUR |
| PEB8191HDV1.1 |
Hersteller: Infineon Technologies
Description: INTELLIGENT NTC-Q NETWORK TERMI
Description: INTELLIGENT NTC-Q NETWORK TERMI
auf Bestellung 23301 Stücke:
Lieferzeit 10-14 Tag (e)Im Einkaufswagen Stück im Wert von UAH
| PEB8191HV1.1 |
Hersteller: Infineon Technologies
Description: NETWORK TERMINATION CONTROLLER
Description: NETWORK TERMINATION CONTROLLER
auf Bestellung 16128 Stücke:
Lieferzeit 10-14 Tag (e)Im Einkaufswagen Stück im Wert von UAH
| PEB8191FGDV1.1 |
Hersteller: Infineon Technologies
Description: NETWORK TERMINATION CONTROLLER
Description: NETWORK TERMINATION CONTROLLER
auf Bestellung 3800 Stücke:
Lieferzeit 10-14 Tag (e)Im Einkaufswagen Stück im Wert von UAH
| MB89663PF-GT-198-BNDE1 |
Hersteller: Infineon Technologies
Description: IC MCU 8BIT 8KB MROM 64QFP
Packaging: Tray
Package / Case: 64-BQFP
Mounting Type: Surface Mount
Speed: 10MHz
Program Memory Size: 8KB (8K x 8)
RAM Size: 256 x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External
Program Memory Type: Mask ROM
Core Processor: F²MC-8L
Data Converters: A/D 8x8b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 2.2V ~ 6V
Connectivity: Serial I/O, UART/USART
Peripherals: POR, PWM, WDT
Supplier Device Package: 64-QFP (14x20)
Part Status: Obsolete
Number of I/O: 36
DigiKey Programmable: Not Verified
Description: IC MCU 8BIT 8KB MROM 64QFP
Packaging: Tray
Package / Case: 64-BQFP
Mounting Type: Surface Mount
Speed: 10MHz
Program Memory Size: 8KB (8K x 8)
RAM Size: 256 x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External
Program Memory Type: Mask ROM
Core Processor: F²MC-8L
Data Converters: A/D 8x8b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 2.2V ~ 6V
Connectivity: Serial I/O, UART/USART
Peripherals: POR, PWM, WDT
Supplier Device Package: 64-QFP (14x20)
Part Status: Obsolete
Number of I/O: 36
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IPG20N04S412ATMA1 |
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Hersteller: Infineon Technologies
Description: MOSFET 2N-CH 40V 20A 8TDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 41W
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 20A
Input Capacitance (Ciss) (Max) @ Vds: 1470pF @ 25V
Rds On (Max) @ Id, Vgs: 12.2mOhm @ 17A, 10V
Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 15µA
Supplier Device Package: PG-TDSON-8-4
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET 2N-CH 40V 20A 8TDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 41W
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 20A
Input Capacitance (Ciss) (Max) @ Vds: 1470pF @ 25V
Rds On (Max) @ Id, Vgs: 12.2mOhm @ 17A, 10V
Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 15µA
Supplier Device Package: PG-TDSON-8-4
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| SPD07N60S5AATMA1 |
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Hersteller: Infineon Technologies
Description: SPD07N60S5 - COOL MOS POWER MOSF
Description: SPD07N60S5 - COOL MOS POWER MOSF
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| SPP20N60C3 |
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Hersteller: Infineon Technologies
Description: POWER FIELD-EFFECT TRANSISTOR, 2
Packaging: Bulk
Part Status: Active
Description: POWER FIELD-EFFECT TRANSISTOR, 2
Packaging: Bulk
Part Status: Active
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| ETT480N22P60HPSA1 |
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Hersteller: Infineon Technologies
Description: SCR MODULE 2.2KV 700A MODULE
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 135°C (TC)
Structure: Series Connection - All SCRs
Current - Hold (Ih) (Max): 300 mA
Current - Gate Trigger (Igt) (Max): 250 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 14700A @ 50Hz
Number of SCRs, Diodes: 2 SCRs
Current - On State (It (AV)) (Max): 480 A
Voltage - Gate Trigger (Vgt) (Max): 2.2 V
Part Status: Obsolete
Current - On State (It (RMS)) (Max): 700 A
Voltage - Off State: 2.2 kV
Description: SCR MODULE 2.2KV 700A MODULE
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 135°C (TC)
Structure: Series Connection - All SCRs
Current - Hold (Ih) (Max): 300 mA
Current - Gate Trigger (Igt) (Max): 250 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 14700A @ 50Hz
Number of SCRs, Diodes: 2 SCRs
Current - On State (It (AV)) (Max): 480 A
Voltage - Gate Trigger (Vgt) (Max): 2.2 V
Part Status: Obsolete
Current - On State (It (RMS)) (Max): 700 A
Voltage - Off State: 2.2 kV
Produkt ist nicht verfügbar
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| TLE9278BQXV33XUMA1 |
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Hersteller: Infineon Technologies
Description: BODY SYSTEM ICS
Description: BODY SYSTEM ICS
Produkt ist nicht verfügbar
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| TLE9278BQXXUMA1 |
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Hersteller: Infineon Technologies
Description: BODY SYSTEM ICS
Description: BODY SYSTEM ICS
Produkt ist nicht verfügbar
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| TLE8718SAAUMA4 |
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Hersteller: Infineon Technologies
Description: IC PWR SWITCH N-CH 1:18 DSO-36
Packaging: Tape & Reel (TR)
Package / Case: 36-BSSOP (0.433", 11.00mm Width) Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 18
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Low Side
Voltage - Load: 4.5V ~ 5.5V
Ratio - Input:Output: 1:18
Supplier Device Package: PG-DSO-36-54
Fault Protection: Over Temperature, Short Circuit, UVLO
Grade: Automotive
Part Status: Active
Description: IC PWR SWITCH N-CH 1:18 DSO-36
Packaging: Tape & Reel (TR)
Package / Case: 36-BSSOP (0.433", 11.00mm Width) Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 18
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Low Side
Voltage - Load: 4.5V ~ 5.5V
Ratio - Input:Output: 1:18
Supplier Device Package: PG-DSO-36-54
Fault Protection: Over Temperature, Short Circuit, UVLO
Grade: Automotive
Part Status: Active
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| TLE824533SAAUMA1 |
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Hersteller: Infineon Technologies
Description: IC PWR DRIVER N-CHAN 1:3 DSO-36
Features: Status Flag
Packaging: Tape & Reel (TR)
Package / Case: 36-BSSOP (0.433", 11.00mm Width) Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 3
Interface: SPI
Switch Type: Relay, Solenoid Driver
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side or Low Side
Rds On (Typ): 250mOhm (Max)
Voltage - Load: 8V ~ 17V
Voltage - Supply (Vcc/Vdd): 4.75V ~ 5.25V
Current - Output (Max): 1.5A
Ratio - Input:Output: 1:3
Supplier Device Package: PG-DSO-36-54
Fault Protection: Current Limiting (Fixed), Over Temperature
Part Status: Not For New Designs
Description: IC PWR DRIVER N-CHAN 1:3 DSO-36
Features: Status Flag
Packaging: Tape & Reel (TR)
Package / Case: 36-BSSOP (0.433", 11.00mm Width) Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 3
Interface: SPI
Switch Type: Relay, Solenoid Driver
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side or Low Side
Rds On (Typ): 250mOhm (Max)
Voltage - Load: 8V ~ 17V
Voltage - Supply (Vcc/Vdd): 4.75V ~ 5.25V
Current - Output (Max): 1.5A
Ratio - Input:Output: 1:3
Supplier Device Package: PG-DSO-36-54
Fault Protection: Current Limiting (Fixed), Over Temperature
Part Status: Not For New Designs
Produkt ist nicht verfügbar
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| IAUC100N10S5N040ATMA1 |
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Hersteller: Infineon Technologies
Description: MOSFET N-CH 100V 100A 8TDSON-34
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 50A, 10V
Power Dissipation (Max): 167W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 90µA
Supplier Device Package: PG-TDSON-8-34
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 78 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5200 pF @ 50 V
Qualification: AEC-Q101
Description: MOSFET N-CH 100V 100A 8TDSON-34
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 50A, 10V
Power Dissipation (Max): 167W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 90µA
Supplier Device Package: PG-TDSON-8-34
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 78 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5200 pF @ 50 V
Qualification: AEC-Q101
auf Bestellung 3673 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 4+ | 4.63 EUR |
| 10+ | 3.22 EUR |
| 100+ | 2.26 EUR |
| 500+ | 1.93 EUR |
| BSZ084N08NS5ATMA1 |
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Hersteller: Infineon Technologies
Description: MOSFET N-CH 80V 40A TSDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 8.4mOhm @ 20A, 10V
Power Dissipation (Max): 63W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 31µA
Supplier Device Package: PG-TSDSON-8-FL
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1820 pF @ 40 V
Description: MOSFET N-CH 80V 40A TSDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 8.4mOhm @ 20A, 10V
Power Dissipation (Max): 63W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 31µA
Supplier Device Package: PG-TSDSON-8-FL
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1820 pF @ 40 V
auf Bestellung 34017 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 6+ | 3.36 EUR |
| 10+ | 2.15 EUR |
| 100+ | 1.45 EUR |
| 500+ | 1.15 EUR |
| 1000+ | 1.06 EUR |
| 2000+ | 0.98 EUR |
| IPB65R600C6 |
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Hersteller: Infineon Technologies
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.3A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 2.1A, 10V
Power Dissipation (Max): 63W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 210µA
Supplier Device Package: PG-TO263-3-2
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 440 pF @ 100 V
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.3A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 2.1A, 10V
Power Dissipation (Max): 63W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 210µA
Supplier Device Package: PG-TO263-3-2
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 440 pF @ 100 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IPI65R600C6 |
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Hersteller: Infineon Technologies
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.3A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 2.1A, 10V
Power Dissipation (Max): 63W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 210µA
Supplier Device Package: PG-TO262-3-1
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 440 pF @ 100 V
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.3A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 2.1A, 10V
Power Dissipation (Max): 63W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 210µA
Supplier Device Package: PG-TO262-3-1
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 440 pF @ 100 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BGM15MA12E6327XTSA1 |
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Hersteller: Infineon Technologies
Description: IC AMP LTE 1.7GHZ-2.2GHZ 12ATSLP
Packaging: Bulk
Package / Case: 12-UFQFN Exposed Pad
Mounting Type: Surface Mount
Frequency: 1.7GHz ~ 2.2GHz
RF Type: LTE, W-CDMA
Voltage - Supply: 2.2V ~ 3.3V
Gain: 17dB
Current - Supply: 4.9mA
Noise Figure: 1.8dB
P1dB: -8dBm
Test Frequency: 2.11GHz ~ 2.17GHz
Supplier Device Package: ATSLP-12-3
Part Status: Obsolete
Description: IC AMP LTE 1.7GHZ-2.2GHZ 12ATSLP
Packaging: Bulk
Package / Case: 12-UFQFN Exposed Pad
Mounting Type: Surface Mount
Frequency: 1.7GHz ~ 2.2GHz
RF Type: LTE, W-CDMA
Voltage - Supply: 2.2V ~ 3.3V
Gain: 17dB
Current - Supply: 4.9mA
Noise Figure: 1.8dB
P1dB: -8dBm
Test Frequency: 2.11GHz ~ 2.17GHz
Supplier Device Package: ATSLP-12-3
Part Status: Obsolete
auf Bestellung 252000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 751+ | 0.66 EUR |
| PBL387821QSD |
auf Bestellung 7776 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 70+ | 7.35 EUR |
| PBL38780/1QSD |
auf Bestellung 24248 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 61+ | 8.13 EUR |
| PBL38627/2SOTR2B |
auf Bestellung 6250 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 54+ | 9.45 EUR |
| TLE9221SX |
Hersteller: Infineon Technologies
Description: TLE9221 - AUTOMOTIVE FLEXRAY TRA
Packaging: Bulk
Package / Case: 16-SSOP (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Type: Transceiver
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 4.75V ~ 5.25V
Number of Drivers/Receivers: 1/1
Data Rate: 10Mbps
Protocol: FlexRay
Supplier Device Package: PG-SSOP16-2
Receiver Hysteresis: 100 mV
Duplex: Half
Part Status: Active
Description: TLE9221 - AUTOMOTIVE FLEXRAY TRA
Packaging: Bulk
Package / Case: 16-SSOP (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Type: Transceiver
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 4.75V ~ 5.25V
Number of Drivers/Receivers: 1/1
Data Rate: 10Mbps
Protocol: FlexRay
Supplier Device Package: PG-SSOP16-2
Receiver Hysteresis: 100 mV
Duplex: Half
Part Status: Active
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| TLD55411QVXUMA1 |
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Hersteller: Infineon Technologies
Description: IC LED DRIVER CTRLR PWM 48VQFN
Packaging: Bulk
Package / Case: 48-VFQFN Exposed Pad
Voltage - Output: 55V
Mounting Type: Surface Mount
Number of Outputs: 1
Frequency: 200kHz ~ 700kHz
Type: DC DC Controller
Operating Temperature: -40°C ~ 150°C (TJ)
Internal Switch(s): No
Topology: Step-Down (Buck), Step-Up (Boost)
Supplier Device Package: PG-VQFN-48-31
Dimming: Analog, PWM
Voltage - Supply (Min): 4.5V
Voltage - Supply (Max): 40V
Grade: Automotive
Description: IC LED DRIVER CTRLR PWM 48VQFN
Packaging: Bulk
Package / Case: 48-VFQFN Exposed Pad
Voltage - Output: 55V
Mounting Type: Surface Mount
Number of Outputs: 1
Frequency: 200kHz ~ 700kHz
Type: DC DC Controller
Operating Temperature: -40°C ~ 150°C (TJ)
Internal Switch(s): No
Topology: Step-Down (Buck), Step-Up (Boost)
Supplier Device Package: PG-VQFN-48-31
Dimming: Analog, PWM
Voltage - Supply (Min): 4.5V
Voltage - Supply (Max): 40V
Grade: Automotive
auf Bestellung 98085 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 83+ | 6.1 EUR |
| IKB20N60TAATMA1372 |
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Hersteller: Infineon Technologies
Description: IKB20N60 - AUTOMOTIVE IGBT DISCR
Packaging: Bulk
Part Status: Active
Description: IKB20N60 - AUTOMOTIVE IGBT DISCR
Packaging: Bulk
Part Status: Active
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| TLE98722QXA40XUMA1 |
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Hersteller: Infineon Technologies
Description: EMBEDDED POWER
Packaging: Tape & Reel (TR)
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: LINbus, SPI, SSC, UART/USART
RAM Size: 8K x 8
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 5.5V ~ 27V
Controller Series: TLE987x
Program Memory Type: FLASH (256kB)
Core Processor: ARM® Cortex®-M3
Supplier Device Package: PG-VQFN-48-29
Grade: Automotive
Part Status: Active
Number of I/O: 10
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
Description: EMBEDDED POWER
Packaging: Tape & Reel (TR)
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: LINbus, SPI, SSC, UART/USART
RAM Size: 8K x 8
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 5.5V ~ 27V
Controller Series: TLE987x
Program Memory Type: FLASH (256kB)
Core Processor: ARM® Cortex®-M3
Supplier Device Package: PG-VQFN-48-29
Grade: Automotive
Part Status: Active
Number of I/O: 10
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BBY5303WE6327HTSA1 |
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Hersteller: Infineon Technologies
Description: DIODE VARACTOR 6V SGL SOD323-2
Packaging: Tape & Reel (TR)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Diode Type: Single
Operating Temperature: -55°C ~ 125°C (TJ)
Capacitance @ Vr, F: 3.1pF @ 3V, 1MHz
Capacitance Ratio Condition: C1/C3
Supplier Device Package: PG-SOD323-3D
Voltage - Peak Reverse (Max): 6 V
Capacitance Ratio: 2.6
Description: DIODE VARACTOR 6V SGL SOD323-2
Packaging: Tape & Reel (TR)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Diode Type: Single
Operating Temperature: -55°C ~ 125°C (TJ)
Capacitance @ Vr, F: 3.1pF @ 3V, 1MHz
Capacitance Ratio Condition: C1/C3
Supplier Device Package: PG-SOD323-3D
Voltage - Peak Reverse (Max): 6 V
Capacitance Ratio: 2.6
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 3000+ | 0.21 EUR |
| MMBTA56LT1 | ![]() |
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Hersteller: Infineon Technologies
Description: TRANS PNP 80V 0.5A SOT23-3
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 1V
Frequency - Transition: 50MHz
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 225 mW
Description: TRANS PNP 80V 0.5A SOT23-3
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 1V
Frequency - Transition: 50MHz
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 225 mW
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| SPS04N60C3E8177AKMA1 |
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auf Bestellung 4500 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 379+ | 1.19 EUR |
| FS150R12KT4PB51BPSA1 |
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auf Bestellung 36 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 3+ | 235.71 EUR |
| IRNBPS2 |
Hersteller: Infineon Technologies
Description: KIT DESGN W/PWR SUPP DUAL FETKY
Description: KIT DESGN W/PWR SUPP DUAL FETKY
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| S25FS064SDSBHV020 |
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Hersteller: Infineon Technologies
Description: IC FLASH 64MBIT SPI/QUAD 24BGA
Packaging: Bulk
Package / Case: 24-TBGA
Mounting Type: Surface Mount
Memory Size: 64Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 1.7V ~ 2V
Technology: FLASH - NOR
Clock Frequency: 80 MHz
Memory Format: FLASH
Supplier Device Package: 24-BGA (8x6)
Part Status: Active
Memory Interface: SPI - Quad I/O
Memory Organization: 8M x 8
Description: IC FLASH 64MBIT SPI/QUAD 24BGA
Packaging: Bulk
Package / Case: 24-TBGA
Mounting Type: Surface Mount
Memory Size: 64Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 1.7V ~ 2V
Technology: FLASH - NOR
Clock Frequency: 80 MHz
Memory Format: FLASH
Supplier Device Package: 24-BGA (8x6)
Part Status: Active
Memory Interface: SPI - Quad I/O
Memory Organization: 8M x 8
auf Bestellung 230 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 152+ | 3.28 EUR |
| S25FS064SDSBHN020 |
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Hersteller: Infineon Technologies
Description: IC FLASH 64MBIT SPI/QUAD 24BGA
Packaging: Bulk
Package / Case: 24-TBGA
Mounting Type: Surface Mount
Memory Size: 64Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.7V ~ 2V
Technology: FLASH - NOR
Clock Frequency: 80 MHz
Memory Format: FLASH
Supplier Device Package: 24-BGA (8x6)
Part Status: Active
Memory Interface: SPI - Quad I/O
Memory Organization: 8M x 8
Description: IC FLASH 64MBIT SPI/QUAD 24BGA
Packaging: Bulk
Package / Case: 24-TBGA
Mounting Type: Surface Mount
Memory Size: 64Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.7V ~ 2V
Technology: FLASH - NOR
Clock Frequency: 80 MHz
Memory Format: FLASH
Supplier Device Package: 24-BGA (8x6)
Part Status: Active
Memory Interface: SPI - Quad I/O
Memory Organization: 8M x 8
auf Bestellung 240 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 129+ | 3.85 EUR |
| PXB4219EV3.3 |
Hersteller: Infineon Technologies
Description: INTERWORKING ELEMENT FOR 8 E1/T1
Description: INTERWORKING ELEMENT FOR 8 E1/T1
auf Bestellung 75 Stücke:
Lieferzeit 10-14 Tag (e)Im Einkaufswagen Stück im Wert von UAH
| PXB4220EV3.3 |
Hersteller: Infineon Technologies
Description: INTERWORKING ELEMENT FOR 8 E1/T1
Description: INTERWORKING ELEMENT FOR 8 E1/T1
auf Bestellung 508 Stücke:
Lieferzeit 10-14 Tag (e)Im Einkaufswagen Stück im Wert von UAH
| PXB4221EV3.3 |
Hersteller: Infineon Technologies
Description: INTERWORKING ELEMENT FOR 8 E1/T1
Description: INTERWORKING ELEMENT FOR 8 E1/T1
auf Bestellung 56 Stücke:
Lieferzeit 10-14 Tag (e)Im Einkaufswagen Stück im Wert von UAH
| PEB2047-16NMTSL |
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Hersteller: Infineon Technologies
Description: IC MEMORY 44PLCC
Packaging: Bulk
Package / Case: 44-LCC (J-Lead)
Mounting Type: Surface Mount
Type: Memory
Supplier Device Package: 44-PLCC (16.6x16.6)
DigiKey Programmable: Not Verified
Description: IC MEMORY 44PLCC
Packaging: Bulk
Package / Case: 44-LCC (J-Lead)
Mounting Type: Surface Mount
Type: Memory
Supplier Device Package: 44-PLCC (16.6x16.6)
DigiKey Programmable: Not Verified
auf Bestellung 1098 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 7+ | 80.87 EUR |
| PEB2047-1BNMTSL |
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Hersteller: Infineon Technologies
Description: IC MEMORY 44PLCC
Packaging: Bulk
Package / Case: 44-LCC (J-Lead)
Mounting Type: Surface Mount
Type: Memory
Supplier Device Package: 44-PLCC (16.6x16.6)
DigiKey Programmable: Not Verified
Description: IC MEMORY 44PLCC
Packaging: Bulk
Package / Case: 44-LCC (J-Lead)
Mounting Type: Surface Mount
Type: Memory
Supplier Device Package: 44-PLCC (16.6x16.6)
DigiKey Programmable: Not Verified
auf Bestellung 456 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 6+ | 81.75 EUR |
| ESD201B203LRHE6327XTSA1 |
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Hersteller: Infineon Technologies
Description: TVS DIODE 5.5VWM 12.1V PGTSLP3
Packaging: Bulk
Package / Case: SC-101, SOT-883
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 5pF @ 1MHz
Current - Peak Pulse (10/1000µs): 16A (8/20µs)
Voltage - Reverse Standoff (Typ): 5.5V (Max)
Supplier Device Package: PG-TSLP-3
Bidirectional Channels: 2
Voltage - Clamping (Max) @ Ipp: 12.1V (Typ)
Power Line Protection: No
Part Status: Obsolete
Description: TVS DIODE 5.5VWM 12.1V PGTSLP3
Packaging: Bulk
Package / Case: SC-101, SOT-883
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 5pF @ 1MHz
Current - Peak Pulse (10/1000µs): 16A (8/20µs)
Voltage - Reverse Standoff (Typ): 5.5V (Max)
Supplier Device Package: PG-TSLP-3
Bidirectional Channels: 2
Voltage - Clamping (Max) @ Ipp: 12.1V (Typ)
Power Line Protection: No
Part Status: Obsolete
auf Bestellung 760856 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 4261+ | 0.1 EUR |





































