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IST026N10NM5AUMA1 IST026N10NM5AUMA1 Infineon Technologies Infineon-IST026N10NM5-DataSheet-v02_00-EN.pdf?fileId=5546d46277921c320177aa9204a17ecd Description: TRENCH >=100V PG-HSOF-5
Packaging: Cut Tape (CT)
Package / Case: 5-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 27A (Ta), 248A (Tc)
Rds On (Max) @ Id, Vgs: 2.6mOhm @ 100A, 10V
Power Dissipation (Max): 3.8W (Ta), 313W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 148µA
Supplier Device Package: PG-HSOF-5-4
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 125 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6300 pF @ 50 V
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100+4.7 EUR
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1000+3.77 EUR
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ISC0802NLSATMA1 ISC0802NLSATMA1 Infineon Technologies Infineon-ISC0802NLS-DataSheet-v02_01-EN.pdf?fileId=5546d46278d64ffd0178fd5988d16d8c Description: MOSFET N-CH 100V 22A/150A TDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 150A (Tc)
Rds On (Max) @ Id, Vgs: 3.6mOhm @ 50A, 10V
Power Dissipation (Max): 2.5W (Ta), 125W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 92µA
Supplier Device Package: PG-TDSON-8-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 73 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5190 pF @ 50 V
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ISC0802NLSATMA1 ISC0802NLSATMA1 Infineon Technologies Infineon-ISC0802NLS-DataSheet-v02_01-EN.pdf?fileId=5546d46278d64ffd0178fd5988d16d8c Description: MOSFET N-CH 100V 22A/150A TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 150A (Tc)
Rds On (Max) @ Id, Vgs: 3.6mOhm @ 50A, 10V
Power Dissipation (Max): 2.5W (Ta), 125W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 92µA
Supplier Device Package: PG-TDSON-8-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 73 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5190 pF @ 50 V
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BTS3028SDL BTS3028SDL Infineon Technologies INFNS13737-1.pdf?t.download=true&u=5oefqw Description: BTS3028 - HITFET, AUTOMOTIVE SMA
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TLS412033VCOREBOARDTOBO1 TLS412033VCOREBOARDTOBO1 Infineon Technologies Infineon-TLS4120D0EPVxx_Core_module-UserManual-v01_00-EN.pdf?fileId=5546d4626e651a41016e6ecaaf77087f Description: TLS4120 3.3V CORE-BOARD
Packaging: Bulk
Voltage - Output: 5V
Voltage - Input: 6V ~ 35V
Current - Output: 2A
Frequency - Switching: 2.2MHz
Regulator Topology: Buck
Board Type: Fully Populated
Utilized IC / Part: TLS412033
Supplied Contents: Board(s)
Main Purpose: DC/DC, Step Down
Outputs and Type: 1, Non-Isolated
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IPP082N10NF2SAKMA1 IPP082N10NF2SAKMA1 Infineon Technologies Infineon-IPP082N10NF2S-DataSheet-v02_00-EN.pdf?fileId=5546d46276fa42a30176fa67027a000b Description: TRENCH >=100V
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 77A (Tc)
Rds On (Max) @ Id, Vgs: 8.2mOhm @ 50A, 10V
Power Dissipation (Max): 3.8W (Ta), 100W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 46µA
Supplier Device Package: PG-TO220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 50 V
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IFX25001MEV33 IFX25001MEV33 Infineon Technologies Infineon-IFX25001-DS-v01_10-EN.pdf?fileId=5546d46269e1c019016ab652474f55d9 Description: IC REG LIN 3.3V 400MA SOT223-4
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IPI126N10N3G IPI126N10N3G Infineon Technologies INFN-S-A0001299281-1.pdf?t.download=true&u=5oefqw Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 58A (Tc)
Rds On (Max) @ Id, Vgs: 12.6mOhm @ 46A, 10V
Power Dissipation (Max): 94W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 46µA
Supplier Device Package: PG-TO262-3
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 50 V
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TLE7241EXUMA2 TLE7241EXUMA2 Infineon Technologies TLE7241E.pdf Description: IC PWR DRIVER N-CHAN 1:2 DSO-20
Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, Over Voltage
Supplier Device Package: PG-DSO-20-27
Ratio - Input:Output: 1:2
Current - Output (Max): 1.2A
Voltage - Supply (Vcc/Vdd): 4.75V ~ 5.25V
Voltage - Load: 9V ~ 18V
Rds On (Typ): 240mOhm
Output Configuration: Low Side
Operating Temperature: -40°C ~ 150°C (TJ)
Switch Type: Relay, Solenoid Driver
Interface: SPI
Number of Outputs: 2
Mounting Type: Surface Mount
Output Type: N-Channel
Package / Case: 20-SOIC (0.295", 7.50mm Width) Exposed Pad
Features: Slew Rate Controlled
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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D251K12BXPSA1 D251K12BXPSA1 Infineon Technologies D251K.pdf Description: DIODE GEN PURP 1.2KV 255A
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TD780N18KOFHPSA1 TD780N18KOFHPSA1 Infineon Technologies Infineon-TT780N18KOF-DataSheet-v03_01-EN.pdf?fileId=5546d46277fc74390178273cf739761b Description: THYR / DIODE MODULE DK
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: 135°C (TJ)
Structure: Series Connection - All SCRs
Current - Hold (Ih) (Max): 300 mA
Current - Gate Trigger (Igt) (Max): 250 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 23500A
Number of SCRs, Diodes: 2 SCRs
Current - On State (It (AV)) (Max): 775 A
Voltage - Gate Trigger (Vgt) (Max): 2 V
Part Status: Active
Current - On State (It (RMS)) (Max): 1050 A
Voltage - Off State: 1.8 kV
Produkt ist nicht verfügbar
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MB90F349ESPMC-GS-N2E1 MB90F349ESPMC-GS-N2E1 Infineon Technologies Description: IC MCU 16BIT 256KB FLASH 100LQFP
Packaging: Bulk
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Speed: 24MHz
Program Memory Size: 256KB (256K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
Core Processor: F²MC-16LX
Data Converters: A/D 16x8/10b
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 3.5V ~ 5.5V
Connectivity: CANbus, EBI/EMI, LINbus, SCI, UART/USART
Peripherals: DMA, POR, WDT
Supplier Device Package: 100-LQFP (14x14)
Part Status: Obsolete
Number of I/O: 82
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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CHL8225G-00CRT CHL8225G-00CRT Infineon Technologies pb-chl8225g.pdf?fileId=5546d462533600a40153567f756728b5 Description: IC REG CTRLR GPU 2OUT 40QFN
Packaging: Tape & Reel (TR)
Package / Case: 40-VFQFN Exposed Pad
Mounting Type: Surface Mount
Number of Outputs: 2
Voltage - Input: 3.3V
Operating Temperature: 0°C ~ 85°C
Applications: Controller, GPU Core Power
Supplier Device Package: 40-QFN (6x6)
Produkt ist nicht verfügbar
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CHL8225G-07CRT Infineon Technologies CHL8225G_8G_V1.12_6-21-13.pdf Description: IC REG CTRLR GPU 2OUT 40QFN
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CHL8225G-05CRT Infineon Technologies CHL8225G_8G_V1.12_6-21-13.pdf Description: IC REG CTRLR GPU 2OUT 40QFN
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CHL8225G-02CRT CHL8225G-02CRT Infineon Technologies CHL8225G_8G_V1.12_6-21-13.pdf Description: IC REG CTRLR GPU 2OUT 40QFN
Packaging: Tape & Reel (TR)
Package / Case: 40-VFQFN Exposed Pad
Mounting Type: Surface Mount
Number of Outputs: 2
Voltage - Input: 3.3V
Operating Temperature: 0°C ~ 85°C (TA)
Applications: Controller, GPU Core Power
Supplier Device Package: 40-QFN (6x6)
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CHL8225G-06CRT Infineon Technologies CHL8225G_8G_V1.12_6-21-13.pdf Description: IC REG CTRLR GPU 2OUT 40QFN
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BA595E6359HTMA1 BA595E6359HTMA1 Infineon Technologies Description: RF DIODE PIN 50V SC79-2
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BA595E6359HTMA1 BA595E6359HTMA1 Infineon Technologies Description: RF DIODE PIN 50V SC79-2
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BA885E7631HTMA1 Infineon Technologies Description: RF DIODE PIN 50V PG-SC79-2-1
Packaging: Tape & Reel (TR)
Package / Case: SC-79, SOD-523
Diode Type: PIN - Single
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 0.6pF @ 10V, 1MHz
Resistance @ If, F: 7Ohm @ 10mA, 100MHz
Voltage - Peak Reverse (Max): 50V
Supplier Device Package: PG-SC79-2-1
Grade: Automotive
Current - Max: 50 mA
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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IPC313N10N3RX1SA2 Infineon Technologies Infineon-IPC313N10N3R-DS-v02_00-EN.pdf?fileId=5546d462525dbac4015287a4906625ca Description: TRENCH >=100V
Packaging: Bulk
Part Status: Active
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SAK-XC2797X-200F100LAB SAK-XC2797X-200F100LAB Infineon Technologies INFNS15652-1.pdf?t.download=true&u=5oefqw Description: IC MCU 16/32B 1.6MB FLSH 176LQFP
DigiKey Programmable: Not Verified
Number of I/O: 150
Part Status: Active
Supplier Device Package: PG-LQFP-176-12
Peripherals: I²S, POR, PWM, WDT
Connectivity: CANbus, EBI/EMI, I²C, LINbus, SPI, SSC, UART/USART, USI
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Core Size: 16/32-Bit
Data Converters: A/D 30x10b
Core Processor: C166SV2
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 125°C (TA)
RAM Size: 138K x 8
Program Memory Size: 1.6MB (1.6M x 8)
Speed: 100MHz
Mounting Type: Surface Mount
Package / Case: 176-LQFP Exposed Pad
Packaging: Bulk
Produkt ist nicht verfügbar
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SAKXC2297H136F80LABKXUMA2 Infineon Technologies Description: 16-BIT C166 MMC - XC2200 FAMILY
Packaging: Bulk
Package / Case: 176-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 80MHz
Program Memory Size: 1.088MB (1.088M x 8)
RAM Size: 80K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: C166SV2
Data Converters: A/D 40x10b
Core Size: 16/32-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Connectivity: CANbus, EBI/EMI, I²C, LINbus, SPI, SSC, UART/USART, USI
Peripherals: DMA, I²S, POR, PWM, WDT
Supplier Device Package: PG-LQFP-176-12
Part Status: Active
Number of I/O: 150
DigiKey Programmable: Not Verified
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IAUS240N08S5N019ATMA1 IAUS240N08S5N019ATMA1 Infineon Technologies IAUS240N08S5N019.pdf Description: MOSFET N-CH 80V 240A HSOG-8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSMD, Gull Wing
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 240A (Tc)
Rds On (Max) @ Id, Vgs: 1.9mOhm @ 100A, 10V
Power Dissipation (Max): 230W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 160µA
Supplier Device Package: PG-HSOG-8-1
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9264 pF @ 40 V
Qualification: AEC-Q101
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IPTG014N10NM5ATMA1 IPTG014N10NM5ATMA1 Infineon Technologies Infineon-IPTG014N10NM5-DataSheet-v02_00-EN.pdf?fileId=5546d46277921c320177aa3f74d57d58 Description: MOSFET N-CH 100V 37A/366A HSOG-8
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSMD, Gull Wing
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 37A (Ta), 366A (Tc)
Rds On (Max) @ Id, Vgs: 1.4mOhm @ 150A, 10V
Power Dissipation (Max): 3.8W (Ta), 375W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 280µA
Supplier Device Package: PG-HSOG-8-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 211 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 16000 pF @ 50 V
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IPTG014N10NM5ATMA1 IPTG014N10NM5ATMA1 Infineon Technologies Infineon-IPTG014N10NM5-DataSheet-v02_00-EN.pdf?fileId=5546d46277921c320177aa3f74d57d58 Description: MOSFET N-CH 100V 37A/366A HSOG-8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSMD, Gull Wing
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 37A (Ta), 366A (Tc)
Rds On (Max) @ Id, Vgs: 1.4mOhm @ 150A, 10V
Power Dissipation (Max): 3.8W (Ta), 375W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 280µA
Supplier Device Package: PG-HSOG-8-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 211 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 16000 pF @ 50 V
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BSM50GD120DLCBPSA1 Infineon Technologies Description: IGBT MODULE 1200V 85A AG-ECONO2A
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Full Bridge Inverter
Operating Temperature: 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 50A
NTC Thermistor: No
Supplier Device Package: AG-ECONO2A
Part Status: Last Time Buy
Current - Collector (Ic) (Max): 85 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 350 W
Current - Collector Cutoff (Max): 84 µA
Input Capacitance (Cies) @ Vce: 3.3 nF @ 25 V
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BSM50GD120DN2BPSA1 Infineon Technologies Description: IGBT MODULE 1200V 72A AG-ECONO2A
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Full Bridge
Operating Temperature: 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 50A
NTC Thermistor: No
Supplier Device Package: AG-ECONO2A
Part Status: Last Time Buy
Current - Collector (Ic) (Max): 72 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 350 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 3.3 nF @ 25 V
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MB90F882PMC-GSE1 MB90F882PMC-GSE1 Infineon Technologies 5047 Description: IC MCU 16BIT 256KB FLASH 100LQFP
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Speed: 33MHz
Program Memory Size: 256KB (256K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
Core Processor: F²MC-16LX
Data Converters: A/D 20x8/10b
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 2.7V ~ 3.6V
Connectivity: I2C, Serial I/O, UART/USART
Peripherals: DMA, POR, PWM, WDT
Supplier Device Package: 100-LQFP (14x14)
Number of I/O: 83
DigiKey Programmable: Not Verified
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S26KS512SDPBHN020 S26KS512SDPBHN020 Infineon Technologies Infineon-512-MB_(64_MB)_256-MB_(32_MB)_128-MB_(16_MB)_1.8_V_3.0_V_HYPERFLASH_FAMILY-DataSheet-v14_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed5ca77559f&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integ Description: IC FLASH 512MBIT HYPERBUS 24FBGA
Packaging: Tray
Package / Case: 24-VBGA
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.7V ~ 1.95V
Technology: FLASH - NOR
Clock Frequency: 166 MHz
Memory Format: FLASH
Supplier Device Package: 24-FBGA (6x8)
Part Status: Active
Memory Interface: HyperBus
Access Time: 96 ns
Memory Organization: 64M x 8
DigiKey Programmable: Not Verified
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S26KS512SDABHI030 S26KS512SDABHI030 Infineon Technologies Infineon-512-MB_(64_MB)_256-MB_(32_MB)_128-MB_(16_MB)_1.8_V_3.0_V_HYPERFLASH_FAMILY-DataSheet-v15_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed5ca77559f Description: IC FLASH 512MBIT HYPERBUS 24FBGA
Packaging: Tray
Package / Case: 24-VBGA
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 1.95V
Technology: FLASH - NOR
Clock Frequency: 100 MHz
Memory Format: FLASH
Supplier Device Package: 24-FBGA (6x8)
Memory Interface: HyperBus
Access Time: 96 ns
Memory Organization: 64M x 8
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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S26KS512SDPBHB020 S26KS512SDPBHB020 Infineon Technologies Infineon-512-MB_(64_MB)_256-MB_(32_MB)_128-MB_(16_MB)_1.8_V_3.0_V_HYPERFLASH_FAMILY-DataSheet-v15_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed5ca77559f Description: IC FLASH 512MBIT HYPERBUS 24FBGA
Qualification: AEC-Q100
Grade: Automotive
Memory Organization: 64M x 8
Access Time: 96 ns
Memory Interface: HyperBus
Part Status: Active
Supplier Device Package: 24-FBGA (6x8)
Memory Format: FLASH
Clock Frequency: 166 MHz
Technology: FLASH - NOR
Voltage - Supply: 1.7V ~ 1.95V
Operating Temperature: -40°C ~ 105°C (TA)
Memory Type: Non-Volatile
Memory Size: 512Mbit
Mounting Type: Surface Mount
Package / Case: 24-VBGA
Packaging: Tray
DigiKey Programmable: Not Verified
auf Bestellung 1332 Stücke:
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10+22.37 EUR
25+21.67 EUR
50+21.13 EUR
100+20.61 EUR
338+19.72 EUR
676+19.6 EUR
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ETD580N16P60HPSA1 ETD580N16P60HPSA1 Infineon Technologies Infineon-eTT580N16P60-DS-v03_06-EN.pdf?fileId=5546d46265487f7b01658027a49f34b0 Description: SCR MODULE 1.6KV 700A MODULE
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ETD580N16P60HPSA1 ETD580N16P60HPSA1 Infineon Technologies Infineon-eTT580N16P60-DS-v03_06-EN.pdf?fileId=5546d46265487f7b01658027a49f34b0 Description: SCR MODULE 1.6KV 700A MODULE
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ETT510N16P60HPSA1 ETT510N16P60HPSA1 Infineon Technologies Infineon-eTT510N16P60-DS-v03_05-EN.pdf?fileId=5546d46265487f7b01658027aea734b3 Description: SCR MODULE 1.6KV 700A MODULE
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 135°C (TC)
Structure: Series Connection - All SCRs
Current - Hold (Ih) (Max): 300 mA
Current - Gate Trigger (Igt) (Max): 250 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 15300A @ 50Hz
Number of SCRs, Diodes: 2 SCRs
Current - On State (It (AV)) (Max): 515 A
Voltage - Gate Trigger (Vgt) (Max): 2 V
Part Status: Obsolete
Current - On State (It (RMS)) (Max): 700 A
Voltage - Off State: 1.6 kV
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ETD630N16P60HPSA1 ETD630N16P60HPSA1 Infineon Technologies Infineon-DS_eTT630N16P60-DS-v03_01-EN.pdf?fileId=5546d46265f064ff01668579447e6418 Description: SCR MODULE 1.6KV 700A MODULE
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 135°C (TC)
Structure: Series Connection - SCR/Diode
Current - Hold (Ih) (Max): 300 mA
Current - Gate Trigger (Igt) (Max): 250 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 19800A @ 50Hz
Number of SCRs, Diodes: 1 SCR, 1 Diode
Current - On State (It (AV)) (Max): 635 A
Voltage - Gate Trigger (Vgt) (Max): 2 V
Current - On State (It (RMS)) (Max): 700 A
Voltage - Off State: 1.6 kV
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ETD630N16P60HPSA1 ETD630N16P60HPSA1 Infineon Technologies Infineon-DS_eTT630N16P60-DS-v03_01-EN.pdf?fileId=5546d46265f064ff01668579447e6418 Description: SCR MODULE 1.6KV 700A MODULE
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 135°C (TC)
Structure: Series Connection - SCR/Diode
Current - Hold (Ih) (Max): 300 mA
Current - Gate Trigger (Igt) (Max): 250 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 19800A @ 50Hz
Number of SCRs, Diodes: 1 SCR, 1 Diode
Current - On State (It (AV)) (Max): 635 A
Voltage - Gate Trigger (Vgt) (Max): 2 V
Current - On State (It (RMS)) (Max): 700 A
Voltage - Off State: 1.6 kV
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ETT580N16P60HPSA1 ETT580N16P60HPSA1 Infineon Technologies Infineon-eTT580N16P60-DS-v03_06-EN.pdf?fileId=5546d46265487f7b01658027a49f34b0 Description: SCR MODULE 1.6KV 700A MODULE
Voltage - Off State: 1.6 kV
Current - On State (It (RMS)) (Max): 700 A
Voltage - Gate Trigger (Vgt) (Max): 2 V
Current - On State (It (AV)) (Max): 586 A
Number of SCRs, Diodes: 2 SCRs
Current - Non Rep. Surge 50, 60Hz (Itsm): 16500A @ 50Hz
Current - Gate Trigger (Igt) (Max): 250 mA
Current - Hold (Ih) (Max): 300 mA
Structure: Series Connection - All SCRs
Operating Temperature: -40°C ~ 135°C (TC)
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Tray
auf Bestellung 2 Stücke:
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ETT630N16P60HPSA1 ETT630N16P60HPSA1 Infineon Technologies Infineon-DS_eTT630N16P60-DS-v03_01-EN.pdf?fileId=5546d46265f064ff01668579447e6418 Description: SCR MODULE 1.6KV 700A MODULE
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 135°C (TC)
Structure: Series Connection - All SCRs
Current - Hold (Ih) (Max): 300 mA
Current - Gate Trigger (Igt) (Max): 250 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 19800A @ 50Hz
Number of SCRs, Diodes: 2 SCRs
Current - On State (It (AV)) (Max): 635 A
Voltage - Gate Trigger (Vgt) (Max): 2 V
Part Status: Active
Current - On State (It (RMS)) (Max): 700 A
Voltage - Off State: 1.6 kV
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ETD510N16P60HPSA1 ETD510N16P60HPSA1 Infineon Technologies Infineon-eTT510N16P60-DS-v03_05-EN.pdf?fileId=5546d46265487f7b01658027aea734b3 Description: SCR MODULE 1.6KV 700A MODULE
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 135°C (TC)
Structure: Series Connection - SCR/Diode
Current - Hold (Ih) (Max): 300 mA
Current - Gate Trigger (Igt) (Max): 250 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 15300A @ 50Hz
Number of SCRs, Diodes: 1 SCR, 1 Diode
Current - On State (It (AV)) (Max): 515 A
Voltage - Gate Trigger (Vgt) (Max): 2 V
Part Status: Obsolete
Current - On State (It (RMS)) (Max): 700 A
Voltage - Off State: 1.6 kV
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IPB65R190CFD7AATMA1 IPB65R190CFD7AATMA1 Infineon Technologies Infineon-IPB65R190CFD7A-DataSheet-v02_00-EN.pdf?fileId=5546d4627506bb3201751c530f6542c3 Description: MOSFET N-CH 650V 14A TO263-3
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 6.4A, 10V
Power Dissipation (Max): 77W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 320µA
Supplier Device Package: PG-TO263-3
Part Status: Active
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1291 pF @ 400 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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IPB65R190CFD7AATMA1 IPB65R190CFD7AATMA1 Infineon Technologies Infineon-IPB65R190CFD7A-DataSheet-v02_00-EN.pdf?fileId=5546d4627506bb3201751c530f6542c3 Description: MOSFET N-CH 650V 14A TO263-3
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 6.4A, 10V
Power Dissipation (Max): 77W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 320µA
Supplier Device Package: PG-TO263-3
Part Status: Active
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1291 pF @ 400 V
Grade: Automotive
Qualification: AEC-Q101
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3+8.38 EUR
10+5.52 EUR
100+3.89 EUR
500+3.32 EUR
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IPWS65R035CFD7AXKSA1 IPWS65R035CFD7AXKSA1 Infineon Technologies Infineon-IPWS65R035CFD7A-DataSheet-v02_00-EN.pdf?fileId=5546d46272e49d2a01730e4a600f28f9 Description: MOSFET N-CH 650V 63A TO247-3-41
Qualification: AEC-Q101
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PG-TO247-3-41
Vgs(th) (Max) @ Id: 4.5V @ 1.79mA
Power Dissipation (Max): 305W (Tc)
Rds On (Max) @ Id, Vgs: 35mOhm @ 35.8A, 10V
Current - Continuous Drain (Id) @ 25°C: 63A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 7149 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 145 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±20V
Produkt ist nicht verfügbar
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IKZ50N65ES5XKSA1 IKZ50N65ES5XKSA1 Infineon Technologies Infineon-IKZ50N65ES5-DS-v02_01-EN.pdf?fileId=5546d4625bd71aa0015bd8175c56052a Description: IGBT TRENCH 650V 80A TO247-4
Packaging: Bulk
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 62 ns
Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 50A
Supplier Device Package: PG-TO247-4
IGBT Type: Trench
Td (on/off) @ 25°C: 36ns/294ns
Switching Energy: 770µJ (on), 880µJ (off)
Test Condition: 400V, 25A, 23.1Ohm, 15V
Gate Charge: 120 nC
Part Status: Active
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 200 A
Power - Max: 274 W
auf Bestellung 240 Stücke:
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96+5.62 EUR
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FP50R12W2T7BPSA1 FP50R12W2T7BPSA1 Infineon Technologies Infineon-FP50R12W2T7-DataSheet-v02_00-EN.pdf?fileId=5546d46273a5366f017426941cbf65f1 Description: IGBT MODULE 1200V 50A AG-EASY2B
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Three Phase Bridge Rectifier
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 175°C (TJ)
NTC Thermistor: Yes
Supplier Device Package: AG-EASY2B
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 50 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 8 µA
Input Capacitance (Cies) @ Vce: 11.1 nF @ 25 V
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FP50R12W2T7PB11BPSA1 Infineon Technologies Description: LOW POWER EASY AG-EASY2B-2
Input Capacitance (Cies) @ Vce: 11.1 nF @ 25 V
Current - Collector Cutoff (Max): 8 µA
Power - Max: 20 mW
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 50 A
Part Status: Active
IGBT Type: Trench Field Stop
Supplier Device Package: AG-EASY2B
NTC Thermistor: Yes
Operating Temperature: -40°C ~ 175°C (TJ)
Configuration: Three Phase Inverter
Input: Three Phase Bridge Rectifier
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Tray
Produkt ist nicht verfügbar
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F415MR12W2M1B76BOMA1 Infineon Technologies Description: LOW POWER EASY AG-EASY2B-2
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PXP1600CPQG003XUMA1 Infineon Technologies Description: IC CONTROLLER
Produkt ist nicht verfügbar
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1EDI3031ASXUMA1 1EDI3031ASXUMA1 Infineon Technologies 1EDI3020ASXUMA1.pdf Description: DGT ISO 5.7KV 1CH GT DVR DSO20
Qualification: AEC-Q100
Voltage - Output Supply: 3V ~ 5.5V
Number of Channels: 1
Grade: Automotive
Pulse Width Distortion (Max): 20ns
Propagation Delay tpLH / tpHL (Max): 120ns, 120ns
Common Mode Transient Immunity (Min): 150kV/µs
Rise / Fall Time (Typ): 55ns, 45ns (Max)
Supplier Device Package: PG-DSO-20-91
Approval Agency: UL, VDE
Voltage - Isolation: 5700Vrms
Current - Output High, Low: 20A, 20A
Technology: Magnetic Coupling
Current - Peak Output: 12A
Operating Temperature: -40°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: 20-BFSOP (0.295", 7.50mm Width)
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
 Mindestbestellmenge: 1000 Stücke
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1EDI3031ASXUMA1 1EDI3031ASXUMA1 Infineon Technologies 1EDI3020ASXUMA1.pdf Description: DGT ISO 5.7KV 1CH GT DVR DSO20
Qualification: AEC-Q100
Voltage - Output Supply: 3V ~ 5.5V
Number of Channels: 1
Grade: Automotive
Pulse Width Distortion (Max): 20ns
Propagation Delay tpLH / tpHL (Max): 120ns, 120ns
Common Mode Transient Immunity (Min): 150kV/µs
Rise / Fall Time (Typ): 55ns, 45ns (Max)
Supplier Device Package: PG-DSO-20-91
Approval Agency: UL, VDE
Voltage - Isolation: 5700Vrms
Current - Output High, Low: 20A, 20A
Technology: Magnetic Coupling
Current - Peak Output: 12A
Operating Temperature: -40°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: 20-BFSOP (0.295", 7.50mm Width)
Packaging: Cut Tape (CT)
auf Bestellung 812 Stücke:
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3+8.19 EUR
10+6.22 EUR
25+5.72 EUR
100+5.19 EUR
250+4.93 EUR
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1EDI3021ASXUMA1 1EDI3021ASXUMA1 Infineon Technologies infineon-1edi3021as-datasheet-en.pdf Description: DGT ISO 5.7KV 1CH GT DVR DSO20
Qualification: AEC-Q100
Voltage - Output Supply: 3V ~ 5.5V
Number of Channels: 1
Grade: Automotive
Pulse Width Distortion (Max): 20ns
Propagation Delay tpLH / tpHL (Max): 120ns, 120ns
Common Mode Transient Immunity (Min): 150kV/µs
Rise / Fall Time (Typ): 55ns, 45ns (Max)
Supplier Device Package: PG-DSO-20-91
Approval Agency: UL, VDE
Voltage - Isolation: 5700Vrms
Current - Output High, Low: 20A, 20A
Technology: Magnetic Coupling
Current - Peak Output: 12A
Operating Temperature: -40°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: 20-BFSOP (0.295", 7.50mm Width)
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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1EDI3021ASXUMA1 1EDI3021ASXUMA1 Infineon Technologies infineon-1edi3021as-datasheet-en.pdf Description: DGT ISO 5.7KV 1CH GT DVR DSO20
Qualification: AEC-Q100
Voltage - Output Supply: 3V ~ 5.5V
Number of Channels: 1
Grade: Automotive
Pulse Width Distortion (Max): 20ns
Propagation Delay tpLH / tpHL (Max): 120ns, 120ns
Common Mode Transient Immunity (Min): 150kV/µs
Rise / Fall Time (Typ): 55ns, 45ns (Max)
Supplier Device Package: PG-DSO-20-91
Approval Agency: UL, VDE
Voltage - Isolation: 5700Vrms
Current - Output High, Low: 20A, 20A
Technology: Magnetic Coupling
Current - Peak Output: 12A
Operating Temperature: -40°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: 20-BFSOP (0.295", 7.50mm Width)
Packaging: Cut Tape (CT)
auf Bestellung 845 Stücke:
Lieferzeit 10-14 Tag (e)
3+8.21 EUR
10+6.24 EUR
25+5.74 EUR
100+5.19 EUR
250+4.94 EUR
500+4.93 EUR
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1EDI3020ASXUMA1 1EDI3020ASXUMA1 Infineon Technologies 1EDI3020ASXUMA1.pdf Description: DGT ISO 5.7KV 1CH GT DVR DSO20
Voltage - Output Supply: 3V ~ 5.5V
Number of Channels: 1
Part Status: Active
Pulse Width Distortion (Max): 20ns
Propagation Delay tpLH / tpHL (Max): 120ns, 120ns
Common Mode Transient Immunity (Min): 150kV/µs
Rise / Fall Time (Typ): 55ns, 45ns (Max)
Supplier Device Package: PG-DSO-20-91
Approval Agency: UL, VDE
Voltage - Isolation: 5700Vrms
Current - Output High, Low: 12A, 12A
Technology: Magnetic Coupling
Current - Peak Output: 12A
Operating Temperature: -40°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: 20-BFSOP (0.295", 7.50mm Width)
Packaging: Tape & Reel (TR)
Qualification: AEC-Q100
Grade: Automotive
Produkt ist nicht verfügbar
 Mindestbestellmenge: 1000 Stücke
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1EDI3020ASXUMA1 1EDI3020ASXUMA1 Infineon Technologies 1EDI3020ASXUMA1.pdf Description: DGT ISO 5.7KV 1CH GT DVR DSO20
Voltage - Output Supply: 3V ~ 5.5V
Number of Channels: 1
Part Status: Active
Pulse Width Distortion (Max): 20ns
Propagation Delay tpLH / tpHL (Max): 120ns, 120ns
Common Mode Transient Immunity (Min): 150kV/µs
Rise / Fall Time (Typ): 55ns, 45ns (Max)
Supplier Device Package: PG-DSO-20-91
Approval Agency: UL, VDE
Voltage - Isolation: 5700Vrms
Current - Output High, Low: 12A, 12A
Technology: Magnetic Coupling
Current - Peak Output: 12A
Operating Temperature: -40°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: 20-BFSOP (0.295", 7.50mm Width)
Packaging: Cut Tape (CT)
Qualification: AEC-Q100
Grade: Automotive
auf Bestellung 805 Stücke:
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3+8.69 EUR
10+6.59 EUR
25+6.07 EUR
100+5.5 EUR
250+5.22 EUR
500+5.21 EUR
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IPAN60R650CEXKSA1 IPAN60R650CEXKSA1 Infineon Technologies Infineon-IPAN60R650CE-DS-v02_00-EN.pdf?fileId=5546d46254e133b40154e712b822183d Description: MOSFET N-CH 600V 9.9A TO220
Input Capacitance (Ciss) (Max) @ Vds: 440 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 20.5 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PG-TO220-FP
Vgs(th) (Max) @ Id: 3.5V @ 200µA
Power Dissipation (Max): 28W (Tc)
Rds On (Max) @ Id, Vgs: 650mOhm @ 2.4A, 10V
Current - Continuous Drain (Id) @ 25°C: 9.9A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Bulk
auf Bestellung 691 Stücke:
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487+1.14 EUR
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SAK-XC2264-56F66LAC SAK-XC2264-56F66LAC Infineon Technologies INFNS12472-1.pdf?t.download=true&u=5oefqw Description: 16 BIT C166 MICROXC2200 FAMILY (
DigiKey Programmable: Not Verified
Number of I/O: 75
Supplier Device Package: PG-LQFP-100-3
Peripherals: DMA, I²S, POR, PWM, WDT
Connectivity: CANbus, EBI/EMI, I²C, LINbus, SPI, SSC, UART/USART, USI
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Core Size: 16/32-Bit
Data Converters: A/D 8x8/10b
Core Processor: C166SV2
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 125°C (TA)
RAM Size: 34K x 8
Program Memory Size: 448KB (448K x 8)
Speed: 66MHz
Mounting Type: Surface Mount
Package / Case: 100-LQFP Exposed Pad
Packaging: Bulk
Produkt ist nicht verfügbar
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IPL65R095CFD7AUMA1 IPL65R095CFD7AUMA1 Infineon Technologies Infineon-IPL65R095CFD7-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c7c9758f2017ca6ba6ac52236 Description: COOLMOS CFD7 SUPERJUNCTION MOSFE
Input Capacitance (Ciss) (Max) @ Vds: 2513 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PG-VSON-4
Vgs(th) (Max) @ Id: 4.5V @ 630µA
Power Dissipation (Max): 171W (Tc)
Rds On (Max) @ Id, Vgs: 95mOhm @ 12.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 29A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 4-PowerTSFN
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
 Mindestbestellmenge: 3000 Stücke
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IPL65R095CFD7AUMA1 IPL65R095CFD7AUMA1 Infineon Technologies Infineon-IPL65R095CFD7-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c7c9758f2017ca6ba6ac52236 Description: COOLMOS CFD7 SUPERJUNCTION MOSFE
Input Capacitance (Ciss) (Max) @ Vds: 2513 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PG-VSON-4
Vgs(th) (Max) @ Id: 4.5V @ 630µA
Power Dissipation (Max): 171W (Tc)
Rds On (Max) @ Id, Vgs: 95mOhm @ 12.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 29A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 4-PowerTSFN
Packaging: Cut Tape (CT)
auf Bestellung 70 Stücke:
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2+12.26 EUR
10+8.21 EUR
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TLE7469GV53AUMA1 TLE7469GV53AUMA1 Infineon Technologies Infineon-TLE7469-DS-v01_60-EN.pdf?fileId=5546d46259d9a4bf0159f9e958903f04 Description: IC REG LINEAR 3.3V/5V DSO-12
Qualification: AEC-Q100
Grade: Automotive
Protection Features: Over Current, Over Temperature, Short Circuit
Voltage Dropout (Max): -, 0.6V @ 215mA
PSRR: 60dB (100Hz), 60dB (100Hz)
Part Status: Active
Control Features: Inhibit, Reset, Watchdog
Voltage - Output (Min/Fixed): 3.3V, 5V
Supplier Device Package: PG-DSO-12-11
Number of Regulators: 2
Voltage - Input (Max): 45V
Current - Quiescent (Iq): 55 µA
Output Configuration: Positive
Operating Temperature: -40°C ~ 150°C
Current - Output: 200mA, 215mA
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: 12-BSOP (0.295", 7.50mm Width) Exposed Pad
Packaging: Cut Tape (CT)
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3+8.44 EUR
10+6.41 EUR
25+5.9 EUR
100+5.34 EUR
250+5.08 EUR
500+4.91 EUR
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T1080N04TOFXPSA1 T1080N04TOFXPSA1 Infineon Technologies Infineon-T1080N-DS-v03_01-en_de.pdf?fileId=db3a3043284aacd8012863528c2a5301 Description: SCR MODULE 600V 2000A DO-200AB
Current - Non Rep. Surge 50, 60Hz (Itsm): 16000A @ 50Hz
Current - Gate Trigger (Igt) (Max): 200 mA
Current - Hold (Ih) (Max): 200 mA
Structure: Single
Operating Temperature: -40°C ~ 140°C
Mounting Type: Clamp On
Package / Case: DO-200AA, A-PUK
Packaging: Tray
Voltage - Off State: 600 V
Current - On State (It (RMS)) (Max): 2000 A
Part Status: Obsolete
Voltage - Gate Trigger (Vgt) (Max): 2 V
Current - On State (It (AV)) (Max): 1078 A
Number of SCRs, Diodes: 1 SCR
Produkt ist nicht verfügbar
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IST026N10NM5AUMA1 Infineon-IST026N10NM5-DataSheet-v02_00-EN.pdf?fileId=5546d46277921c320177aa9204a17ecd
IST026N10NM5AUMA1
Hersteller: Infineon Technologies
Description: TRENCH >=100V PG-HSOF-5
Packaging: Cut Tape (CT)
Package / Case: 5-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 27A (Ta), 248A (Tc)
Rds On (Max) @ Id, Vgs: 2.6mOhm @ 100A, 10V
Power Dissipation (Max): 3.8W (Ta), 313W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 148µA
Supplier Device Package: PG-HSOF-5-4
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 125 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6300 pF @ 50 V
auf Bestellung 1663 Stücke:
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AnzahlPrivatkunde
3+9.9 EUR
10+6.59 EUR
100+4.7 EUR
500+3.89 EUR
1000+3.77 EUR
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ISC0802NLSATMA1 Infineon-ISC0802NLS-DataSheet-v02_01-EN.pdf?fileId=5546d46278d64ffd0178fd5988d16d8c
ISC0802NLSATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 100V 22A/150A TDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 150A (Tc)
Rds On (Max) @ Id, Vgs: 3.6mOhm @ 50A, 10V
Power Dissipation (Max): 2.5W (Ta), 125W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 92µA
Supplier Device Package: PG-TDSON-8-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 73 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5190 pF @ 50 V
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AnzahlPrivatkunde
5000+1.56 EUR
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ISC0802NLSATMA1 Infineon-ISC0802NLS-DataSheet-v02_01-EN.pdf?fileId=5546d46278d64ffd0178fd5988d16d8c
ISC0802NLSATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 100V 22A/150A TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 150A (Tc)
Rds On (Max) @ Id, Vgs: 3.6mOhm @ 50A, 10V
Power Dissipation (Max): 2.5W (Ta), 125W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 92µA
Supplier Device Package: PG-TDSON-8-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 73 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5190 pF @ 50 V
auf Bestellung 5000 Stücke:
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AnzahlPrivatkunde
4+5.24 EUR
10+3.38 EUR
50+2.58 EUR
100+2.32 EUR
500+1.87 EUR
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BTS3028SDL INFNS13737-1.pdf?t.download=true&u=5oefqw
BTS3028SDL
Hersteller: Infineon Technologies
Description: BTS3028 - HITFET, AUTOMOTIVE SMA
Produkt ist nicht verfügbar
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TLS412033VCOREBOARDTOBO1 Infineon-TLS4120D0EPVxx_Core_module-UserManual-v01_00-EN.pdf?fileId=5546d4626e651a41016e6ecaaf77087f
TLS412033VCOREBOARDTOBO1
Hersteller: Infineon Technologies
Description: TLS4120 3.3V CORE-BOARD
Packaging: Bulk
Voltage - Output: 5V
Voltage - Input: 6V ~ 35V
Current - Output: 2A
Frequency - Switching: 2.2MHz
Regulator Topology: Buck
Board Type: Fully Populated
Utilized IC / Part: TLS412033
Supplied Contents: Board(s)
Main Purpose: DC/DC, Step Down
Outputs and Type: 1, Non-Isolated
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1+66.28 EUR
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IPP082N10NF2SAKMA1 Infineon-IPP082N10NF2S-DataSheet-v02_00-EN.pdf?fileId=5546d46276fa42a30176fa67027a000b
IPP082N10NF2SAKMA1
Hersteller: Infineon Technologies
Description: TRENCH >=100V
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 77A (Tc)
Rds On (Max) @ Id, Vgs: 8.2mOhm @ 50A, 10V
Power Dissipation (Max): 3.8W (Ta), 100W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 46µA
Supplier Device Package: PG-TO220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 50 V
auf Bestellung 1978 Stücke:
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AnzahlPrivatkunde
5+4.76 EUR
10+3.06 EUR
50+2.32 EUR
100+2.09 EUR
500+1.68 EUR
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IFX25001MEV33 Infineon-IFX25001-DS-v01_10-EN.pdf?fileId=5546d46269e1c019016ab652474f55d9
IFX25001MEV33
Hersteller: Infineon Technologies
Description: IC REG LIN 3.3V 400MA SOT223-4
Produkt ist nicht verfügbar
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IPI126N10N3G INFN-S-A0001299281-1.pdf?t.download=true&u=5oefqw
IPI126N10N3G
Hersteller: Infineon Technologies
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 58A (Tc)
Rds On (Max) @ Id, Vgs: 12.6mOhm @ 46A, 10V
Power Dissipation (Max): 94W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 46µA
Supplier Device Package: PG-TO262-3
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 50 V
Produkt ist nicht verfügbar
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TLE7241EXUMA2 TLE7241E.pdf
TLE7241EXUMA2
Hersteller: Infineon Technologies
Description: IC PWR DRIVER N-CHAN 1:2 DSO-20
Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, Over Voltage
Supplier Device Package: PG-DSO-20-27
Ratio - Input:Output: 1:2
Current - Output (Max): 1.2A
Voltage - Supply (Vcc/Vdd): 4.75V ~ 5.25V
Voltage - Load: 9V ~ 18V
Rds On (Typ): 240mOhm
Output Configuration: Low Side
Operating Temperature: -40°C ~ 150°C (TJ)
Switch Type: Relay, Solenoid Driver
Interface: SPI
Number of Outputs: 2
Mounting Type: Surface Mount
Output Type: N-Channel
Package / Case: 20-SOIC (0.295", 7.50mm Width) Exposed Pad
Features: Slew Rate Controlled
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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D251K12BXPSA1 D251K.pdf
D251K12BXPSA1
Hersteller: Infineon Technologies
Description: DIODE GEN PURP 1.2KV 255A
Produkt ist nicht verfügbar
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TD780N18KOFHPSA1 Infineon-TT780N18KOF-DataSheet-v03_01-EN.pdf?fileId=5546d46277fc74390178273cf739761b
TD780N18KOFHPSA1
Hersteller: Infineon Technologies
Description: THYR / DIODE MODULE DK
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: 135°C (TJ)
Structure: Series Connection - All SCRs
Current - Hold (Ih) (Max): 300 mA
Current - Gate Trigger (Igt) (Max): 250 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 23500A
Number of SCRs, Diodes: 2 SCRs
Current - On State (It (AV)) (Max): 775 A
Voltage - Gate Trigger (Vgt) (Max): 2 V
Part Status: Active
Current - On State (It (RMS)) (Max): 1050 A
Voltage - Off State: 1.8 kV
Produkt ist nicht verfügbar
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MB90F349ESPMC-GS-N2E1
MB90F349ESPMC-GS-N2E1
Hersteller: Infineon Technologies
Description: IC MCU 16BIT 256KB FLASH 100LQFP
Packaging: Bulk
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Speed: 24MHz
Program Memory Size: 256KB (256K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
Core Processor: F²MC-16LX
Data Converters: A/D 16x8/10b
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 3.5V ~ 5.5V
Connectivity: CANbus, EBI/EMI, LINbus, SCI, UART/USART
Peripherals: DMA, POR, WDT
Supplier Device Package: 100-LQFP (14x14)
Part Status: Obsolete
Number of I/O: 82
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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CHL8225G-00CRT pb-chl8225g.pdf?fileId=5546d462533600a40153567f756728b5
CHL8225G-00CRT
Hersteller: Infineon Technologies
Description: IC REG CTRLR GPU 2OUT 40QFN
Packaging: Tape & Reel (TR)
Package / Case: 40-VFQFN Exposed Pad
Mounting Type: Surface Mount
Number of Outputs: 2
Voltage - Input: 3.3V
Operating Temperature: 0°C ~ 85°C
Applications: Controller, GPU Core Power
Supplier Device Package: 40-QFN (6x6)
Produkt ist nicht verfügbar
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CHL8225G-07CRT CHL8225G_8G_V1.12_6-21-13.pdf
Hersteller: Infineon Technologies
Description: IC REG CTRLR GPU 2OUT 40QFN
Produkt ist nicht verfügbar
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CHL8225G-05CRT CHL8225G_8G_V1.12_6-21-13.pdf
Hersteller: Infineon Technologies
Description: IC REG CTRLR GPU 2OUT 40QFN
Produkt ist nicht verfügbar
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CHL8225G-02CRT CHL8225G_8G_V1.12_6-21-13.pdf
CHL8225G-02CRT
Hersteller: Infineon Technologies
Description: IC REG CTRLR GPU 2OUT 40QFN
Packaging: Tape & Reel (TR)
Package / Case: 40-VFQFN Exposed Pad
Mounting Type: Surface Mount
Number of Outputs: 2
Voltage - Input: 3.3V
Operating Temperature: 0°C ~ 85°C (TA)
Applications: Controller, GPU Core Power
Supplier Device Package: 40-QFN (6x6)
Produkt ist nicht verfügbar
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CHL8225G-06CRT CHL8225G_8G_V1.12_6-21-13.pdf
Hersteller: Infineon Technologies
Description: IC REG CTRLR GPU 2OUT 40QFN
Produkt ist nicht verfügbar
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BA595E6359HTMA1
BA595E6359HTMA1
Hersteller: Infineon Technologies
Description: RF DIODE PIN 50V SC79-2
Produkt ist nicht verfügbar
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BA595E6359HTMA1
BA595E6359HTMA1
Hersteller: Infineon Technologies
Description: RF DIODE PIN 50V SC79-2
Produkt ist nicht verfügbar
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BA885E7631HTMA1
Hersteller: Infineon Technologies
Description: RF DIODE PIN 50V PG-SC79-2-1
Packaging: Tape & Reel (TR)
Package / Case: SC-79, SOD-523
Diode Type: PIN - Single
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 0.6pF @ 10V, 1MHz
Resistance @ If, F: 7Ohm @ 10mA, 100MHz
Voltage - Peak Reverse (Max): 50V
Supplier Device Package: PG-SC79-2-1
Grade: Automotive
Current - Max: 50 mA
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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IPC313N10N3RX1SA2 Infineon-IPC313N10N3R-DS-v02_00-EN.pdf?fileId=5546d462525dbac4015287a4906625ca
Hersteller: Infineon Technologies
Description: TRENCH >=100V
Packaging: Bulk
Part Status: Active
auf Bestellung 76076 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
74+7.49 EUR
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SAK-XC2797X-200F100LAB INFNS15652-1.pdf?t.download=true&u=5oefqw
SAK-XC2797X-200F100LAB
Hersteller: Infineon Technologies
Description: IC MCU 16/32B 1.6MB FLSH 176LQFP
DigiKey Programmable: Not Verified
Number of I/O: 150
Part Status: Active
Supplier Device Package: PG-LQFP-176-12
Peripherals: I²S, POR, PWM, WDT
Connectivity: CANbus, EBI/EMI, I²C, LINbus, SPI, SSC, UART/USART, USI
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Core Size: 16/32-Bit
Data Converters: A/D 30x10b
Core Processor: C166SV2
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 125°C (TA)
RAM Size: 138K x 8
Program Memory Size: 1.6MB (1.6M x 8)
Speed: 100MHz
Mounting Type: Surface Mount
Package / Case: 176-LQFP Exposed Pad
Packaging: Bulk
Produkt ist nicht verfügbar
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SAKXC2297H136F80LABKXUMA2
Hersteller: Infineon Technologies
Description: 16-BIT C166 MMC - XC2200 FAMILY
Packaging: Bulk
Package / Case: 176-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 80MHz
Program Memory Size: 1.088MB (1.088M x 8)
RAM Size: 80K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: C166SV2
Data Converters: A/D 40x10b
Core Size: 16/32-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Connectivity: CANbus, EBI/EMI, I²C, LINbus, SPI, SSC, UART/USART, USI
Peripherals: DMA, I²S, POR, PWM, WDT
Supplier Device Package: PG-LQFP-176-12
Part Status: Active
Number of I/O: 150
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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IAUS240N08S5N019ATMA1 IAUS240N08S5N019.pdf
IAUS240N08S5N019ATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 80V 240A HSOG-8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSMD, Gull Wing
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 240A (Tc)
Rds On (Max) @ Id, Vgs: 1.9mOhm @ 100A, 10V
Power Dissipation (Max): 230W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 160µA
Supplier Device Package: PG-HSOG-8-1
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9264 pF @ 40 V
Qualification: AEC-Q101
auf Bestellung 2061 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3+9.23 EUR
10+6.13 EUR
100+4.36 EUR
500+3.83 EUR
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IPTG014N10NM5ATMA1 Infineon-IPTG014N10NM5-DataSheet-v02_00-EN.pdf?fileId=5546d46277921c320177aa3f74d57d58
IPTG014N10NM5ATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 100V 37A/366A HSOG-8
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSMD, Gull Wing
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 37A (Ta), 366A (Tc)
Rds On (Max) @ Id, Vgs: 1.4mOhm @ 150A, 10V
Power Dissipation (Max): 3.8W (Ta), 375W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 280µA
Supplier Device Package: PG-HSOG-8-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 211 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 16000 pF @ 50 V
Produkt ist nicht verfügbar
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IPTG014N10NM5ATMA1 Infineon-IPTG014N10NM5-DataSheet-v02_00-EN.pdf?fileId=5546d46277921c320177aa3f74d57d58
IPTG014N10NM5ATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 100V 37A/366A HSOG-8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSMD, Gull Wing
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 37A (Ta), 366A (Tc)
Rds On (Max) @ Id, Vgs: 1.4mOhm @ 150A, 10V
Power Dissipation (Max): 3.8W (Ta), 375W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 280µA
Supplier Device Package: PG-HSOG-8-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 211 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 16000 pF @ 50 V
Produkt ist nicht verfügbar
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BSM50GD120DLCBPSA1
Hersteller: Infineon Technologies
Description: IGBT MODULE 1200V 85A AG-ECONO2A
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Full Bridge Inverter
Operating Temperature: 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 50A
NTC Thermistor: No
Supplier Device Package: AG-ECONO2A
Part Status: Last Time Buy
Current - Collector (Ic) (Max): 85 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 350 W
Current - Collector Cutoff (Max): 84 µA
Input Capacitance (Cies) @ Vce: 3.3 nF @ 25 V
Produkt ist nicht verfügbar
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BSM50GD120DN2BPSA1
Hersteller: Infineon Technologies
Description: IGBT MODULE 1200V 72A AG-ECONO2A
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Full Bridge
Operating Temperature: 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 50A
NTC Thermistor: No
Supplier Device Package: AG-ECONO2A
Part Status: Last Time Buy
Current - Collector (Ic) (Max): 72 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 350 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 3.3 nF @ 25 V
Produkt ist nicht verfügbar
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MB90F882PMC-GSE1 5047
MB90F882PMC-GSE1
Hersteller: Infineon Technologies
Description: IC MCU 16BIT 256KB FLASH 100LQFP
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Speed: 33MHz
Program Memory Size: 256KB (256K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
Core Processor: F²MC-16LX
Data Converters: A/D 20x8/10b
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 2.7V ~ 3.6V
Connectivity: I2C, Serial I/O, UART/USART
Peripherals: DMA, POR, PWM, WDT
Supplier Device Package: 100-LQFP (14x14)
Number of I/O: 83
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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S26KS512SDPBHN020 Infineon-512-MB_(64_MB)_256-MB_(32_MB)_128-MB_(16_MB)_1.8_V_3.0_V_HYPERFLASH_FAMILY-DataSheet-v14_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed5ca77559f&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integ
S26KS512SDPBHN020
Hersteller: Infineon Technologies
Description: IC FLASH 512MBIT HYPERBUS 24FBGA
Packaging: Tray
Package / Case: 24-VBGA
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.7V ~ 1.95V
Technology: FLASH - NOR
Clock Frequency: 166 MHz
Memory Format: FLASH
Supplier Device Package: 24-FBGA (6x8)
Part Status: Active
Memory Interface: HyperBus
Access Time: 96 ns
Memory Organization: 64M x 8
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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S26KS512SDABHI030 Infineon-512-MB_(64_MB)_256-MB_(32_MB)_128-MB_(16_MB)_1.8_V_3.0_V_HYPERFLASH_FAMILY-DataSheet-v15_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed5ca77559f
S26KS512SDABHI030
Hersteller: Infineon Technologies
Description: IC FLASH 512MBIT HYPERBUS 24FBGA
Packaging: Tray
Package / Case: 24-VBGA
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 1.95V
Technology: FLASH - NOR
Clock Frequency: 100 MHz
Memory Format: FLASH
Supplier Device Package: 24-FBGA (6x8)
Memory Interface: HyperBus
Access Time: 96 ns
Memory Organization: 64M x 8
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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S26KS512SDPBHB020 Infineon-512-MB_(64_MB)_256-MB_(32_MB)_128-MB_(16_MB)_1.8_V_3.0_V_HYPERFLASH_FAMILY-DataSheet-v15_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed5ca77559f
S26KS512SDPBHB020
Hersteller: Infineon Technologies
Description: IC FLASH 512MBIT HYPERBUS 24FBGA
Qualification: AEC-Q100
Grade: Automotive
Memory Organization: 64M x 8
Access Time: 96 ns
Memory Interface: HyperBus
Part Status: Active
Supplier Device Package: 24-FBGA (6x8)
Memory Format: FLASH
Clock Frequency: 166 MHz
Technology: FLASH - NOR
Voltage - Supply: 1.7V ~ 1.95V
Operating Temperature: -40°C ~ 105°C (TA)
Memory Type: Non-Volatile
Memory Size: 512Mbit
Mounting Type: Surface Mount
Package / Case: 24-VBGA
Packaging: Tray
DigiKey Programmable: Not Verified
auf Bestellung 1332 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1+24.11 EUR
10+22.37 EUR
25+21.67 EUR
50+21.13 EUR
100+20.61 EUR
338+19.72 EUR
676+19.6 EUR
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ETD580N16P60HPSA1 Infineon-eTT580N16P60-DS-v03_06-EN.pdf?fileId=5546d46265487f7b01658027a49f34b0
ETD580N16P60HPSA1
Hersteller: Infineon Technologies
Description: SCR MODULE 1.6KV 700A MODULE
auf Bestellung 2 Stücke:
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AnzahlPrivatkunde
2+370.4 EUR
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ETD580N16P60HPSA1 Infineon-eTT580N16P60-DS-v03_06-EN.pdf?fileId=5546d46265487f7b01658027a49f34b0
ETD580N16P60HPSA1
Hersteller: Infineon Technologies
Description: SCR MODULE 1.6KV 700A MODULE
Produkt ist nicht verfügbar
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ETT510N16P60HPSA1 Infineon-eTT510N16P60-DS-v03_05-EN.pdf?fileId=5546d46265487f7b01658027aea734b3
ETT510N16P60HPSA1
Hersteller: Infineon Technologies
Description: SCR MODULE 1.6KV 700A MODULE
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 135°C (TC)
Structure: Series Connection - All SCRs
Current - Hold (Ih) (Max): 300 mA
Current - Gate Trigger (Igt) (Max): 250 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 15300A @ 50Hz
Number of SCRs, Diodes: 2 SCRs
Current - On State (It (AV)) (Max): 515 A
Voltage - Gate Trigger (Vgt) (Max): 2 V
Part Status: Obsolete
Current - On State (It (RMS)) (Max): 700 A
Voltage - Off State: 1.6 kV
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2+378.37 EUR
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ETD630N16P60HPSA1 Infineon-DS_eTT630N16P60-DS-v03_01-EN.pdf?fileId=5546d46265f064ff01668579447e6418
ETD630N16P60HPSA1
Hersteller: Infineon Technologies
Description: SCR MODULE 1.6KV 700A MODULE
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 135°C (TC)
Structure: Series Connection - SCR/Diode
Current - Hold (Ih) (Max): 300 mA
Current - Gate Trigger (Igt) (Max): 250 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 19800A @ 50Hz
Number of SCRs, Diodes: 1 SCR, 1 Diode
Current - On State (It (AV)) (Max): 635 A
Voltage - Gate Trigger (Vgt) (Max): 2 V
Current - On State (It (RMS)) (Max): 700 A
Voltage - Off State: 1.6 kV
auf Bestellung 2 Stücke:
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AnzahlPrivatkunde
2+483.02 EUR
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ETD630N16P60HPSA1 Infineon-DS_eTT630N16P60-DS-v03_01-EN.pdf?fileId=5546d46265f064ff01668579447e6418
ETD630N16P60HPSA1
Hersteller: Infineon Technologies
Description: SCR MODULE 1.6KV 700A MODULE
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 135°C (TC)
Structure: Series Connection - SCR/Diode
Current - Hold (Ih) (Max): 300 mA
Current - Gate Trigger (Igt) (Max): 250 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 19800A @ 50Hz
Number of SCRs, Diodes: 1 SCR, 1 Diode
Current - On State (It (AV)) (Max): 635 A
Voltage - Gate Trigger (Vgt) (Max): 2 V
Current - On State (It (RMS)) (Max): 700 A
Voltage - Off State: 1.6 kV
Produkt ist nicht verfügbar
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ETT580N16P60HPSA1 Infineon-eTT580N16P60-DS-v03_06-EN.pdf?fileId=5546d46265487f7b01658027a49f34b0
ETT580N16P60HPSA1
Hersteller: Infineon Technologies
Description: SCR MODULE 1.6KV 700A MODULE
Voltage - Off State: 1.6 kV
Current - On State (It (RMS)) (Max): 700 A
Voltage - Gate Trigger (Vgt) (Max): 2 V
Current - On State (It (AV)) (Max): 586 A
Number of SCRs, Diodes: 2 SCRs
Current - Non Rep. Surge 50, 60Hz (Itsm): 16500A @ 50Hz
Current - Gate Trigger (Igt) (Max): 250 mA
Current - Hold (Ih) (Max): 300 mA
Structure: Series Connection - All SCRs
Operating Temperature: -40°C ~ 135°C (TC)
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Tray
auf Bestellung 2 Stücke:
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AnzahlPrivatkunde
1+410.19 EUR
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ETT630N16P60HPSA1 Infineon-DS_eTT630N16P60-DS-v03_01-EN.pdf?fileId=5546d46265f064ff01668579447e6418
ETT630N16P60HPSA1
Hersteller: Infineon Technologies
Description: SCR MODULE 1.6KV 700A MODULE
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 135°C (TC)
Structure: Series Connection - All SCRs
Current - Hold (Ih) (Max): 300 mA
Current - Gate Trigger (Igt) (Max): 250 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 19800A @ 50Hz
Number of SCRs, Diodes: 2 SCRs
Current - On State (It (AV)) (Max): 635 A
Voltage - Gate Trigger (Vgt) (Max): 2 V
Part Status: Active
Current - On State (It (RMS)) (Max): 700 A
Voltage - Off State: 1.6 kV
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AnzahlPrivatkunde
1+435.47 EUR
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ETD510N16P60HPSA1 Infineon-eTT510N16P60-DS-v03_05-EN.pdf?fileId=5546d46265487f7b01658027aea734b3
ETD510N16P60HPSA1
Hersteller: Infineon Technologies
Description: SCR MODULE 1.6KV 700A MODULE
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 135°C (TC)
Structure: Series Connection - SCR/Diode
Current - Hold (Ih) (Max): 300 mA
Current - Gate Trigger (Igt) (Max): 250 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 15300A @ 50Hz
Number of SCRs, Diodes: 1 SCR, 1 Diode
Current - On State (It (AV)) (Max): 515 A
Voltage - Gate Trigger (Vgt) (Max): 2 V
Part Status: Obsolete
Current - On State (It (RMS)) (Max): 700 A
Voltage - Off State: 1.6 kV
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2+362.82 EUR
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IPB65R190CFD7AATMA1 Infineon-IPB65R190CFD7A-DataSheet-v02_00-EN.pdf?fileId=5546d4627506bb3201751c530f6542c3
IPB65R190CFD7AATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 650V 14A TO263-3
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 6.4A, 10V
Power Dissipation (Max): 77W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 320µA
Supplier Device Package: PG-TO263-3
Part Status: Active
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1291 pF @ 400 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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IPB65R190CFD7AATMA1 Infineon-IPB65R190CFD7A-DataSheet-v02_00-EN.pdf?fileId=5546d4627506bb3201751c530f6542c3
IPB65R190CFD7AATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 650V 14A TO263-3
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 6.4A, 10V
Power Dissipation (Max): 77W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 320µA
Supplier Device Package: PG-TO263-3
Part Status: Active
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1291 pF @ 400 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 915 Stücke:
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3+8.38 EUR
10+5.52 EUR
100+3.89 EUR
500+3.32 EUR
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IPWS65R035CFD7AXKSA1 Infineon-IPWS65R035CFD7A-DataSheet-v02_00-EN.pdf?fileId=5546d46272e49d2a01730e4a600f28f9
IPWS65R035CFD7AXKSA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 650V 63A TO247-3-41
Qualification: AEC-Q101
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PG-TO247-3-41
Vgs(th) (Max) @ Id: 4.5V @ 1.79mA
Power Dissipation (Max): 305W (Tc)
Rds On (Max) @ Id, Vgs: 35mOhm @ 35.8A, 10V
Current - Continuous Drain (Id) @ 25°C: 63A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 7149 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 145 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±20V
Produkt ist nicht verfügbar
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IKZ50N65ES5XKSA1 Infineon-IKZ50N65ES5-DS-v02_01-EN.pdf?fileId=5546d4625bd71aa0015bd8175c56052a
IKZ50N65ES5XKSA1
Hersteller: Infineon Technologies
Description: IGBT TRENCH 650V 80A TO247-4
Packaging: Bulk
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 62 ns
Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 50A
Supplier Device Package: PG-TO247-4
IGBT Type: Trench
Td (on/off) @ 25°C: 36ns/294ns
Switching Energy: 770µJ (on), 880µJ (off)
Test Condition: 400V, 25A, 23.1Ohm, 15V
Gate Charge: 120 nC
Part Status: Active
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 200 A
Power - Max: 274 W
auf Bestellung 240 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
96+5.62 EUR
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FP50R12W2T7BPSA1 Infineon-FP50R12W2T7-DataSheet-v02_00-EN.pdf?fileId=5546d46273a5366f017426941cbf65f1
FP50R12W2T7BPSA1
Hersteller: Infineon Technologies
Description: IGBT MODULE 1200V 50A AG-EASY2B
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Three Phase Bridge Rectifier
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 175°C (TJ)
NTC Thermistor: Yes
Supplier Device Package: AG-EASY2B
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 50 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 8 µA
Input Capacitance (Cies) @ Vce: 11.1 nF @ 25 V
auf Bestellung 43 Stücke:
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1+97.33 EUR
15+70.71 EUR
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FP50R12W2T7PB11BPSA1
Hersteller: Infineon Technologies
Description: LOW POWER EASY AG-EASY2B-2
Input Capacitance (Cies) @ Vce: 11.1 nF @ 25 V
Current - Collector Cutoff (Max): 8 µA
Power - Max: 20 mW
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 50 A
Part Status: Active
IGBT Type: Trench Field Stop
Supplier Device Package: AG-EASY2B
NTC Thermistor: Yes
Operating Temperature: -40°C ~ 175°C (TJ)
Configuration: Three Phase Inverter
Input: Three Phase Bridge Rectifier
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Tray
Produkt ist nicht verfügbar
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F415MR12W2M1B76BOMA1
Hersteller: Infineon Technologies
Description: LOW POWER EASY AG-EASY2B-2
auf Bestellung 6 Stücke:
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AnzahlPrivatkunde
1+604.28 EUR
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PXP1600CPQG003XUMA1
Hersteller: Infineon Technologies
Description: IC CONTROLLER
Produkt ist nicht verfügbar
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1EDI3031ASXUMA1 1EDI3020ASXUMA1.pdf
1EDI3031ASXUMA1
Hersteller: Infineon Technologies
Description: DGT ISO 5.7KV 1CH GT DVR DSO20
Qualification: AEC-Q100
Voltage - Output Supply: 3V ~ 5.5V
Number of Channels: 1
Grade: Automotive
Pulse Width Distortion (Max): 20ns
Propagation Delay tpLH / tpHL (Max): 120ns, 120ns
Common Mode Transient Immunity (Min): 150kV/µs
Rise / Fall Time (Typ): 55ns, 45ns (Max)
Supplier Device Package: PG-DSO-20-91
Approval Agency: UL, VDE
Voltage - Isolation: 5700Vrms
Current - Output High, Low: 20A, 20A
Technology: Magnetic Coupling
Current - Peak Output: 12A
Operating Temperature: -40°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: 20-BFSOP (0.295", 7.50mm Width)
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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1EDI3031ASXUMA1 1EDI3020ASXUMA1.pdf
1EDI3031ASXUMA1
Hersteller: Infineon Technologies
Description: DGT ISO 5.7KV 1CH GT DVR DSO20
Qualification: AEC-Q100
Voltage - Output Supply: 3V ~ 5.5V
Number of Channels: 1
Grade: Automotive
Pulse Width Distortion (Max): 20ns
Propagation Delay tpLH / tpHL (Max): 120ns, 120ns
Common Mode Transient Immunity (Min): 150kV/µs
Rise / Fall Time (Typ): 55ns, 45ns (Max)
Supplier Device Package: PG-DSO-20-91
Approval Agency: UL, VDE
Voltage - Isolation: 5700Vrms
Current - Output High, Low: 20A, 20A
Technology: Magnetic Coupling
Current - Peak Output: 12A
Operating Temperature: -40°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: 20-BFSOP (0.295", 7.50mm Width)
Packaging: Cut Tape (CT)
auf Bestellung 812 Stücke:
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AnzahlPrivatkunde
3+8.19 EUR
10+6.22 EUR
25+5.72 EUR
100+5.19 EUR
250+4.93 EUR
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1EDI3021ASXUMA1 infineon-1edi3021as-datasheet-en.pdf
1EDI3021ASXUMA1
Hersteller: Infineon Technologies
Description: DGT ISO 5.7KV 1CH GT DVR DSO20
Qualification: AEC-Q100
Voltage - Output Supply: 3V ~ 5.5V
Number of Channels: 1
Grade: Automotive
Pulse Width Distortion (Max): 20ns
Propagation Delay tpLH / tpHL (Max): 120ns, 120ns
Common Mode Transient Immunity (Min): 150kV/µs
Rise / Fall Time (Typ): 55ns, 45ns (Max)
Supplier Device Package: PG-DSO-20-91
Approval Agency: UL, VDE
Voltage - Isolation: 5700Vrms
Current - Output High, Low: 20A, 20A
Technology: Magnetic Coupling
Current - Peak Output: 12A
Operating Temperature: -40°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: 20-BFSOP (0.295", 7.50mm Width)
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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1EDI3021ASXUMA1 infineon-1edi3021as-datasheet-en.pdf
1EDI3021ASXUMA1
Hersteller: Infineon Technologies
Description: DGT ISO 5.7KV 1CH GT DVR DSO20
Qualification: AEC-Q100
Voltage - Output Supply: 3V ~ 5.5V
Number of Channels: 1
Grade: Automotive
Pulse Width Distortion (Max): 20ns
Propagation Delay tpLH / tpHL (Max): 120ns, 120ns
Common Mode Transient Immunity (Min): 150kV/µs
Rise / Fall Time (Typ): 55ns, 45ns (Max)
Supplier Device Package: PG-DSO-20-91
Approval Agency: UL, VDE
Voltage - Isolation: 5700Vrms
Current - Output High, Low: 20A, 20A
Technology: Magnetic Coupling
Current - Peak Output: 12A
Operating Temperature: -40°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: 20-BFSOP (0.295", 7.50mm Width)
Packaging: Cut Tape (CT)
auf Bestellung 845 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3+8.21 EUR
10+6.24 EUR
25+5.74 EUR
100+5.19 EUR
250+4.94 EUR
500+4.93 EUR
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1EDI3020ASXUMA1 1EDI3020ASXUMA1.pdf
1EDI3020ASXUMA1
Hersteller: Infineon Technologies
Description: DGT ISO 5.7KV 1CH GT DVR DSO20
Voltage - Output Supply: 3V ~ 5.5V
Number of Channels: 1
Part Status: Active
Pulse Width Distortion (Max): 20ns
Propagation Delay tpLH / tpHL (Max): 120ns, 120ns
Common Mode Transient Immunity (Min): 150kV/µs
Rise / Fall Time (Typ): 55ns, 45ns (Max)
Supplier Device Package: PG-DSO-20-91
Approval Agency: UL, VDE
Voltage - Isolation: 5700Vrms
Current - Output High, Low: 12A, 12A
Technology: Magnetic Coupling
Current - Peak Output: 12A
Operating Temperature: -40°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: 20-BFSOP (0.295", 7.50mm Width)
Packaging: Tape & Reel (TR)
Qualification: AEC-Q100
Grade: Automotive
Produkt ist nicht verfügbar
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1EDI3020ASXUMA1 1EDI3020ASXUMA1.pdf
1EDI3020ASXUMA1
Hersteller: Infineon Technologies
Description: DGT ISO 5.7KV 1CH GT DVR DSO20
Voltage - Output Supply: 3V ~ 5.5V
Number of Channels: 1
Part Status: Active
Pulse Width Distortion (Max): 20ns
Propagation Delay tpLH / tpHL (Max): 120ns, 120ns
Common Mode Transient Immunity (Min): 150kV/µs
Rise / Fall Time (Typ): 55ns, 45ns (Max)
Supplier Device Package: PG-DSO-20-91
Approval Agency: UL, VDE
Voltage - Isolation: 5700Vrms
Current - Output High, Low: 12A, 12A
Technology: Magnetic Coupling
Current - Peak Output: 12A
Operating Temperature: -40°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: 20-BFSOP (0.295", 7.50mm Width)
Packaging: Cut Tape (CT)
Qualification: AEC-Q100
Grade: Automotive
auf Bestellung 805 Stücke:
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AnzahlPrivatkunde
3+8.69 EUR
10+6.59 EUR
25+6.07 EUR
100+5.5 EUR
250+5.22 EUR
500+5.21 EUR
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IPAN60R650CEXKSA1 Infineon-IPAN60R650CE-DS-v02_00-EN.pdf?fileId=5546d46254e133b40154e712b822183d
IPAN60R650CEXKSA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 600V 9.9A TO220
Input Capacitance (Ciss) (Max) @ Vds: 440 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 20.5 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PG-TO220-FP
Vgs(th) (Max) @ Id: 3.5V @ 200µA
Power Dissipation (Max): 28W (Tc)
Rds On (Max) @ Id, Vgs: 650mOhm @ 2.4A, 10V
Current - Continuous Drain (Id) @ 25°C: 9.9A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Bulk
auf Bestellung 691 Stücke:
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AnzahlPrivatkunde
487+1.14 EUR
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SAK-XC2264-56F66LAC INFNS12472-1.pdf?t.download=true&u=5oefqw
SAK-XC2264-56F66LAC
Hersteller: Infineon Technologies
Description: 16 BIT C166 MICROXC2200 FAMILY (
DigiKey Programmable: Not Verified
Number of I/O: 75
Supplier Device Package: PG-LQFP-100-3
Peripherals: DMA, I²S, POR, PWM, WDT
Connectivity: CANbus, EBI/EMI, I²C, LINbus, SPI, SSC, UART/USART, USI
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Core Size: 16/32-Bit
Data Converters: A/D 8x8/10b
Core Processor: C166SV2
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 125°C (TA)
RAM Size: 34K x 8
Program Memory Size: 448KB (448K x 8)
Speed: 66MHz
Mounting Type: Surface Mount
Package / Case: 100-LQFP Exposed Pad
Packaging: Bulk
Produkt ist nicht verfügbar
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IPL65R095CFD7AUMA1 Infineon-IPL65R095CFD7-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c7c9758f2017ca6ba6ac52236
IPL65R095CFD7AUMA1
Hersteller: Infineon Technologies
Description: COOLMOS CFD7 SUPERJUNCTION MOSFE
Input Capacitance (Ciss) (Max) @ Vds: 2513 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PG-VSON-4
Vgs(th) (Max) @ Id: 4.5V @ 630µA
Power Dissipation (Max): 171W (Tc)
Rds On (Max) @ Id, Vgs: 95mOhm @ 12.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 29A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 4-PowerTSFN
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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IPL65R095CFD7AUMA1 Infineon-IPL65R095CFD7-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c7c9758f2017ca6ba6ac52236
IPL65R095CFD7AUMA1
Hersteller: Infineon Technologies
Description: COOLMOS CFD7 SUPERJUNCTION MOSFE
Input Capacitance (Ciss) (Max) @ Vds: 2513 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PG-VSON-4
Vgs(th) (Max) @ Id: 4.5V @ 630µA
Power Dissipation (Max): 171W (Tc)
Rds On (Max) @ Id, Vgs: 95mOhm @ 12.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 29A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 4-PowerTSFN
Packaging: Cut Tape (CT)
auf Bestellung 70 Stücke:
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2+12.26 EUR
10+8.21 EUR
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TLE7469GV53AUMA1 Infineon-TLE7469-DS-v01_60-EN.pdf?fileId=5546d46259d9a4bf0159f9e958903f04
TLE7469GV53AUMA1
Hersteller: Infineon Technologies
Description: IC REG LINEAR 3.3V/5V DSO-12
Qualification: AEC-Q100
Grade: Automotive
Protection Features: Over Current, Over Temperature, Short Circuit
Voltage Dropout (Max): -, 0.6V @ 215mA
PSRR: 60dB (100Hz), 60dB (100Hz)
Part Status: Active
Control Features: Inhibit, Reset, Watchdog
Voltage - Output (Min/Fixed): 3.3V, 5V
Supplier Device Package: PG-DSO-12-11
Number of Regulators: 2
Voltage - Input (Max): 45V
Current - Quiescent (Iq): 55 µA
Output Configuration: Positive
Operating Temperature: -40°C ~ 150°C
Current - Output: 200mA, 215mA
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: 12-BSOP (0.295", 7.50mm Width) Exposed Pad
Packaging: Cut Tape (CT)
auf Bestellung 5988 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3+8.44 EUR
10+6.41 EUR
25+5.9 EUR
100+5.34 EUR
250+5.08 EUR
500+4.91 EUR
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T1080N04TOFXPSA1 Infineon-T1080N-DS-v03_01-en_de.pdf?fileId=db3a3043284aacd8012863528c2a5301
T1080N04TOFXPSA1
Hersteller: Infineon Technologies
Description: SCR MODULE 600V 2000A DO-200AB
Current - Non Rep. Surge 50, 60Hz (Itsm): 16000A @ 50Hz
Current - Gate Trigger (Igt) (Max): 200 mA
Current - Hold (Ih) (Max): 200 mA
Structure: Single
Operating Temperature: -40°C ~ 140°C
Mounting Type: Clamp On
Package / Case: DO-200AA, A-PUK
Packaging: Tray
Voltage - Off State: 600 V
Current - On State (It (RMS)) (Max): 2000 A
Part Status: Obsolete
Voltage - Gate Trigger (Vgt) (Max): 2 V
Current - On State (It (AV)) (Max): 1078 A
Number of SCRs, Diodes: 1 SCR
Produkt ist nicht verfügbar
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