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IHW20N65R5 IHW20N65R5 Infineon Technologies Infineon-IHW20N65R5-DS-v02_03-EN.pdf?fileId=5546d461464245d30146ae1140b900d8 Description: INSULATED GATE BIPOLAR TRANSISTO
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 82 ns
Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 20A
Supplier Device Package: PG-TO247-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 24ns/250ns
Switching Energy: 540µJ (on), 160µJ (off)
Test Condition: 400V, 10A, 20Ohm, 15V
Gate Charge: 97 nC
Part Status: Active
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 60 A
Power - Max: 150 W
Produkt ist nicht verfügbar
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IPB330P10NMATMA1 IPB330P10NMATMA1 Infineon Technologies Infineon-IPB330P10NM-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c7bb971ed017bc9a628c74f22 Description: TRENCH >=100V PG-TO263-3
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 6.9A (Ta), 62A (Tc)
Rds On (Max) @ Id, Vgs: 33mOhm @ 53A, 10V
Power Dissipation (Max): 3.8W (Ta), 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 5.55mA
Supplier Device Package: PG-TO263-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 236 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11000 pF @ 50 V
auf Bestellung 1000 Stücke:
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1000+2.78 EUR
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IPB330P10NMATMA1 IPB330P10NMATMA1 Infineon Technologies Infineon-IPB330P10NM-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c7bb971ed017bc9a628c74f22 Description: TRENCH >=100V PG-TO263-3
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 6.9A (Ta), 62A (Tc)
Rds On (Max) @ Id, Vgs: 33mOhm @ 53A, 10V
Power Dissipation (Max): 3.8W (Ta), 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 5.55mA
Supplier Device Package: PG-TO263-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 236 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11000 pF @ 50 V
auf Bestellung 1132 Stücke:
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4+5.28 EUR
10+3.89 EUR
100+3.4 EUR
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IPD18DP10LMATMA1 IPD18DP10LMATMA1 Infineon Technologies Infineon-IPD18DP10LM-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c7bb971ed017bddd1558c1a43 Description: TRENCH >=100V PG-TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta), 13.9A (Tc)
Rds On (Max) @ Id, Vgs: 178mOhm @ 13A, 10V
Power Dissipation (Max): 3W (Ta), 83W (Tc)
Vgs(th) (Max) @ Id: 2V @ 1.04mA
Supplier Device Package: PG-TO252-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 50 V
Produkt ist nicht verfügbar
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IPD18DP10LMATMA1 IPD18DP10LMATMA1 Infineon Technologies Infineon-IPD18DP10LM-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c7bb971ed017bddd1558c1a43 Description: TRENCH >=100V PG-TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta), 13.9A (Tc)
Rds On (Max) @ Id, Vgs: 178mOhm @ 13A, 10V
Power Dissipation (Max): 3W (Ta), 83W (Tc)
Vgs(th) (Max) @ Id: 2V @ 1.04mA
Supplier Device Package: PG-TO252-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 50 V
auf Bestellung 1975 Stücke:
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7+2.83 EUR
10+1.85 EUR
100+1.24 EUR
500+0.99 EUR
1000+0.92 EUR
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IPD19DP10NMATMA1 IPD19DP10NMATMA1 Infineon Technologies Infineon-IPD19DP10NM-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c7bb971ed017bde08b35a1bae Description: TRENCH >=100V PG-TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.6A (Ta), 13.7A (Tc)
Rds On (Max) @ Id, Vgs: 186mOhm @ 12A, 10V
Power Dissipation (Max): 3W (Ta), 83W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1.04mA
Supplier Device Package: PG-TO252-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 50 V
Produkt ist nicht verfügbar
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IPD19DP10NMATMA1 IPD19DP10NMATMA1 Infineon Technologies Infineon-IPD19DP10NM-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c7bb971ed017bde08b35a1bae Description: TRENCH >=100V PG-TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.6A (Ta), 13.7A (Tc)
Rds On (Max) @ Id, Vgs: 186mOhm @ 12A, 10V
Power Dissipation (Max): 3W (Ta), 83W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1.04mA
Supplier Device Package: PG-TO252-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 50 V
auf Bestellung 173 Stücke:
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12+1.51 EUR
100+1.14 EUR
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CY14B101NA-ZS45XI CY14B101NA-ZS45XI Infineon Technologies Infineon-CY14B101LA_CY14B101NA_1-Mbit_(128_K_8_64_K_16)_nvSRAM-DataSheet-v20_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebd6cf32ff4&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Description: IC NVSRAM 1MBIT PAR 44TSOP II
Packaging: Bulk
Package / Case: 44-TSOP (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 1Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: NVSRAM (Non-Volatile SRAM)
Memory Format: NVSRAM
Supplier Device Package: 44-TSOP II
Write Cycle Time - Word, Page: 45ns
Memory Interface: Parallel
Access Time: 45 ns
Memory Organization: 64K x 16
DigiKey Programmable: Not Verified
auf Bestellung 668 Stücke:
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CY7C1263KV18-550BZXC CY7C1263KV18-550BZXC Infineon Technologies download Description: IC SRAM 36MBIT PAR 165FBGA
Packaging: Bulk
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 36Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, QDR II+
Clock Frequency: 550 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (13x15)
Memory Interface: Parallel
Memory Organization: 2M x 18
DigiKey Programmable: Not Verified
auf Bestellung 272 Stücke:
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CY7C1568KV18-550BZXI CY7C1568KV18-550BZXI Infineon Technologies download Description: IC SRAM 72MBIT PAR 165FBGA
Packaging: Bulk
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 72Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, DDR II+
Clock Frequency: 550 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (13x15)
Part Status: Active
Memory Interface: Parallel
Memory Organization: 4M x 18
DigiKey Programmable: Not Verified
auf Bestellung 275 Stücke:
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CY7C1570KV18-550BZXC CY7C1570KV18-550BZXC Infineon Technologies download Description: IC SRAM 72MBIT PAR 165FBGA
Packaging: Bulk
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 72Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, DDR II+
Clock Frequency: 550 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (13x15)
Part Status: Active
Memory Interface: Parallel
Memory Organization: 2M x 36
auf Bestellung 218 Stücke:
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1+501.58 EUR
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CY7C2168KV18-550BZC CY7C2168KV18-550BZC Infineon Technologies Infineon-CY7C2168KV18_CY7C2170KV18_18-Mbit_DDR_II+_SRAM_Two-Word_Burst_Architecture_(2.5_Cycle_Read_Latency)_with_ODT-DataSheet-v11_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec2014936e0&utm_source=cypress&utm_medium=referral&utm_ Description: IC SRAM 18MBIT PAR 165FBGA
Packaging: Bulk
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 18Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, DDR II+
Clock Frequency: 550 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (13x15)
Memory Interface: Parallel
Memory Organization: 1M x 18
DigiKey Programmable: Not Verified
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5+101.61 EUR
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CY7C2170KV18-550BZXC CY7C2170KV18-550BZXC Infineon Technologies Infineon-CY7C2168KV18_CY7C2170KV18_18-Mbit_DDR_II+_SRAM_Two-Word_Burst_Architecture_(2.5_Cycle_Read_Latency)_with_ODT-DataSheet-v11_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec2014936e0&utm_source=cypress&utm_medium=referral&utm_ Description: IC SRAM 18MBIT PAR 165FBGA
Packaging: Bulk
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 18Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, DDR II+
Clock Frequency: 550 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (13x15)
Part Status: Active
Memory Interface: Parallel
Memory Organization: 512K x 36
DigiKey Programmable: Not Verified
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CY7C2268KV18-550BZC CY7C2268KV18-550BZC Infineon Technologies Infineon-CY7C2268KV18_CY7C2270KV18_36-Mbit_DDR_II+_SRAM_Two-Word_Burst_Architecture_(2.5_Cycle_Read_Latency)_with_ODT-DataSheet-v10_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec197363665 Description: IC SRAM 36MBIT PAR 165FBGA
Packaging: Bulk
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 36Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, DDR II+
Clock Frequency: 550 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (13x15)
Memory Interface: Parallel
Memory Organization: 2M x 18
DigiKey Programmable: Not Verified
auf Bestellung 117 Stücke:
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3+179.17 EUR
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AUIRFN7110TR AUIRFN7110TR Infineon Technologies auirfn7110.pdf?fileId=5546d462533600a4015355b1638a1438 Description: MOSFET N-CH 100V 58A 8PQFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 58A (Tc)
Rds On (Max) @ Id, Vgs: 14.5mOhm @ 35A, 10V
Power Dissipation (Max): 4.3W (Ta), 125W (Tc)
Vgs(th) (Max) @ Id: 4V @ 100µA
Supplier Device Package: 8-PQFN (5x6)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3050 pF @ 25 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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FS600R07A2E3BOSA1 Infineon Technologies Description: MODULE IGBT 600V HYBRID PACK 2
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.6V @ 15V, 400A
NTC Thermistor: Yes
IGBT Type: Trench Field Stop
Part Status: Obsolete
Current - Collector (Ic) (Max): 530 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Power - Max: 1250 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 39 nF @ 25 V
Produkt ist nicht verfügbar
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F3L11MR12W2M1B74BOMA1 F3L11MR12W2M1B74BOMA1 Infineon Technologies Infineon-F3L11MR12W2M1_B74-DataSheet-v02_00-EN.pdf?fileId=5546d46277921c320177b9447dce438e Description: LOW POWER EASY
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Level Inverter
Operating Temperature: -40°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.5V @ 15V, 100A
NTC Thermistor: Yes
Supplier Device Package: AG-EASY2B-2
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 9 µA
Input Capacitance (Cies) @ Vce: 21.7 nF @ 25 V
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1+245.59 EUR
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BA595E6327 BA595E6327 Infineon Technologies INFNS15691-1.pdf?t.download=true&u=5oefqw Description: BA595 - PIN DIODE
Packaging: Bulk
Package / Case: SC-76, SOD-323
Diode Type: PIN - Single
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 0.6pF @ 10V, 1MHz
Voltage - Peak Reverse (Max): 50V
Supplier Device Package: PG-SOD323-2-1
Part Status: Active
Current - Max: 50 mA
Produkt ist nicht verfügbar
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BA885E6327 BA885E6327 Infineon Technologies INFNS15691-1.pdf?t.download=true&u=5oefqw Description: BA885 - PIN DIODE
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Diode Type: PIN - Single
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 0.6pF @ 10V, 1MHz
Voltage - Peak Reverse (Max): 50V
Supplier Device Package: PG-SOT23-3-11
Part Status: Active
Current - Max: 50 mA
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BA885E6327HTSA1 BA885E6327HTSA1 Infineon Technologies BA595_885_895_Series.pdf Description: RF DIODE PIN 50V SOT23-3
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BA892-02V-E6327 BA892-02V-E6327 Infineon Technologies INFNS15690-1.pdf?t.download=true&u=5oefqw Description: RECTIFIER DIODE, 35V
Packaging: Bulk
Package / Case: SC-79, SOD-523
Diode Type: Standard - Single
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 1.1pF @ 3V, 1MHz
Resistance @ If, F: 500mOhm @ 10mA, 100MHz
Voltage - Peak Reverse (Max): 35V
Supplier Device Package: PG-SC79-2-1
Part Status: Active
Current - Max: 100 mA
Produkt ist nicht verfügbar
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BA892-02VE6327 BA892-02VE6327 Infineon Technologies INFNS15690-1.pdf?t.download=true&u=5oefqw Description: RECTIFIER DIODE, 35V
Packaging: Bulk
Package / Case: SC-79, SOD-523
Diode Type: Standard - Single
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 1.1pF @ 3V, 1MHz
Resistance @ If, F: 500mOhm @ 10mA, 100MHz
Voltage - Peak Reverse (Max): 35V
Supplier Device Package: PG-SC79-2
Part Status: Active
Current - Max: 100 mA
Produkt ist nicht verfügbar
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BA89202LE6327 BA89202LE6327 Infineon Technologies INFNS15690-1.pdf?t.download=true&u=5oefqw Description: RECTIFIER DIODE, 35V
Packaging: Bulk
Package / Case: SOD-882
Diode Type: Standard - Single
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 1.1pF @ 3V, 1MHz
Resistance @ If, F: 500mOhm @ 10mA, 100MHz
Voltage - Peak Reverse (Max): 35V
Supplier Device Package: PG-TSLP-2-1
Part Status: Active
Current - Max: 100 mA
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4157+0.12 EUR
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BA895-E6327 BA895-E6327 Infineon Technologies INFNS15691-1.pdf?t.download=true&u=5oefqw Description: PIN DIODE
Produkt ist nicht verfügbar
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BA895E6327 BA895E6327 Infineon Technologies INFNS15691-1.pdf?t.download=true&u=5oefqw Description: PIN DIODE
Packaging: Bulk
Package / Case: SC-80
Diode Type: PIN - Single
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 0.6pF @ 10V, 1MHz
Resistance @ If, F: 7Ohm @ 10mA, 100MHz
Voltage - Peak Reverse (Max): 50V
Supplier Device Package: SCD-80
Part Status: Active
Current - Max: 50 mA
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6918+0.065 EUR
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BAL99E6327 BAL99E6327 Infineon Technologies INFNS10749-1.pdf?t.download=true&u=5oefqw Description: DIODE GEN PURP 80V 250MA SOT23
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Capacitance @ Vr, F: 1.5pF @ 0V, 1MHz
Current - Average Rectified (Io): 250mA
Supplier Device Package: PG-SOT23
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 1 µA @ 70 V
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8266+0.064 EUR
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BAL99E6327HTSA1 BAL99E6327HTSA1 Infineon Technologies bal99series.pdf?folderId=db3a30431400ef6801141b5844e103ea&fileId=db3a30431400ef6801141b842ae203f6 Description: DIODE STANDARD 80V 250MA PGSOT23
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Capacitance @ Vr, F: 1.5pF @ 0V, 1MHz
Current - Average Rectified (Io): 250mA
Supplier Device Package: PG-SOT23
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 1 µA @ 70 V
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BAR50-03WE6327 BAR50-03WE6327 Infineon Technologies INFNS15693-1.pdf?t.download=true&u=5oefqw Description: PIN DIODE, 50V V(BR)
Packaging: Bulk
Package / Case: SC-76, SOD-323
Diode Type: PIN - Single
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 0.4pF @ 5V, 1MHz
Resistance @ If, F: 4.5Ohm @ 10mA, 100MHz
Voltage - Peak Reverse (Max): 50V
Supplier Device Package: PG-SOD323-2-1
Part Status: Active
Current - Max: 100 mA
Power Dissipation (Max): 250 mW
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BAR9002ELSE6327XTSA1 BAR9002ELSE6327XTSA1 Infineon Technologies INFNS19426-1.pdf?t.download=true&u=5oefqw Description: RF DIODE PIN 80V 250MW TSSLP-2
Packaging: Tape & Reel (TR)
Package / Case: 0201 (0603 Metric)
Diode Type: PIN - Single
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 0.35pF @ 1V, 1MHz
Resistance @ If, F: 800mOhm @ 10mA, 100MHz
Voltage - Peak Reverse (Max): 80V
Supplier Device Package: PG-TSSLP-2-3
Part Status: Active
Current - Max: 100 mA
Power Dissipation (Max): 250 mW
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15000+0.088 EUR
30000+0.086 EUR
45000+0.085 EUR
75000+0.084 EUR
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BAR9002LRHE6327XTSA1 BAR9002LRHE6327XTSA1 Infineon Technologies bar90series.pdf Description: RF DIODE PIN 80V 250MW TSLP-2
Packaging: Bulk
Package / Case: SOD-882
Diode Type: PIN - Single
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 0.35pF @ 1V, 1MHz
Resistance @ If, F: 800mOhm @ 10mA, 100MHz
Voltage - Peak Reverse (Max): 80V
Supplier Device Package: PG-TSLP-2-7
Part Status: Obsolete
Current - Max: 100 mA
Power Dissipation (Max): 250 mW
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TLE4998C3CHAMA1 TLE4998C3CHAMA1 Infineon Technologies TLE4998C3C_Data_Sheet_Rev1.1.pdf?folderId=db3a30431ce5fb52011d3dd6e8012582&fileId=db3a30431ce5fb52011d3e52cfdd259e Description: SENSOR HALL PWM SSO3-10
Features: Selectable Scale, Temperature Compensated
Packaging: Bulk
Package / Case: 3-SSIP, SSO-3-10
Output Type: PWM
Mounting Type: Through Hole
Axis: Single
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 4.5V ~ 5.5V
Bandwidth: Programmable
Technology: Hall Effect
Resolution: 16 b
Sensing Range: ±50mT, ±100mT, ±200mT
Current - Output (Max): 5mA
Current - Supply (Max): 8mA
Supplier Device Package: PG-SSO-3-10
Grade: Automotive
Qualification: AEC-Q100
auf Bestellung 7500 Stücke:
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TLE4998P3C TLE4998P3C Infineon Technologies Infineon-TLE4998P3C-DS-v01_01-en.pdf?fileId=db3a30431ce5fb52011d3ea4f5e225b8 Description: TLE4998 - PROGRAMMABLE LINEAR HA
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TLE4998P4 Infineon Technologies Infineon-TLE4998P-DS-v01_00-en.pdf?fileId=db3a30431ce5fb52011d3e9a9f3425b1 Description: TLE4998 - PROGRAMMABLE LINEAR HA
Features: Selectable Scale, Temperature Compensated
Packaging: Bulk
Package / Case: 4-SIP, SSO-4-1
Output Type: PWM
Mounting Type: Through Hole
Axis: Single
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 4.5V ~ 5.5V
Bandwidth: Programmable
Technology: Hall Effect
Resolution: 12 b
Sensing Range: ±50mT, ±100mT, ±200mT
Current - Output (Max): 5mA
Current - Supply (Max): 8mA
Supplier Device Package: PG-SSO-4-1
Part Status: Active
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TLE4998P4HALA1 TLE4998P4HALA1 Infineon Technologies TLE4998P_Data_Sheet_V1.0.pdf?folderId=db3a30431ce5fb52011d3dd6e8012582&fileId=db3a30431ce5fb52011d3e9a9f3425b1 Description: SENSOR HALL EFFECT PWM SSO4
Features: Selectable Scale, Temperature Compensated
Packaging: Bulk
Package / Case: 4-SIP, SSO-4-1
Output Type: PWM
Mounting Type: Through Hole
Axis: Single
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 4.5V ~ 5.5V
Bandwidth: Programmable
Technology: Hall Effect
Resolution: 12 b
Sensing Range: ±50mT, ±100mT, ±200mT
Current - Output (Max): 5mA
Current - Supply (Max): 8mA
Supplier Device Package: PG-SSO-4-1
Grade: Automotive
Part Status: Active
Qualification: AEC-Q100
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TLE4998S3C TLE4998S3C Infineon Technologies Infineon-TLE4998S3C-DS-v01_01-en.pdf?fileId=db3a30431ce5fb52011d3ecb064425c2 Description: TLE4998 - PROGRAMMABLE LINEAR HA
Features: Selectable Scale, Temperature Compensated
Packaging: Bulk
Package / Case: 3-SSIP Module
Output Type: SENT
Mounting Type: Through Hole
Axis: Single
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 4.5V ~ 5.5V
Bandwidth: Programmable
Technology: Hall Effect
Resolution: 16 b
Sensing Range: ±50mT, ±100mT, ±200mT
Current - Output (Max): 5mA
Current - Supply (Max): 8mA
Supplier Device Package: PG-SSO-3-92
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115+4.36 EUR
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TLE4998C8DXUMA2 TLE4998C8DXUMA2 Infineon Technologies Infineon-TLE4998C8D-DS-v01_01-EN.pdf?fileId=5546d4625b62cd8a015bc891ed2f31ac Description: IC HALL SENSOR LINEAR TDSO-8
Packaging: Tape & Reel (TR)
Grade: Automotive
Part Status: Active
Qualification: AEC-Q100
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TLE4998C8DXUMA2 TLE4998C8DXUMA2 Infineon Technologies Infineon-TLE4998C8D-DS-v01_01-EN.pdf?fileId=5546d4625b62cd8a015bc891ed2f31ac Description: IC HALL SENSOR LINEAR TDSO-8
Packaging: Cut Tape (CT)
Grade: Automotive
Part Status: Active
Qualification: AEC-Q100
auf Bestellung 4455 Stücke:
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2+11.26 EUR
10+9.02 EUR
25+8.34 EUR
100+7.21 EUR
500+6.76 EUR
1000+6.31 EUR
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TLE4998C8XUMA2 TLE4998C8XUMA2 Infineon Technologies Infineon-TLE4998C8D-DS-v01_01-EN.pdf?fileId=5546d4625b62cd8a015bc891ed2f31ac Description: IC HALL SENSOR LINEAR TDSO-8
Packaging: Tape & Reel (TR)
Grade: Automotive
Part Status: Active
Qualification: AEC-Q100
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2500+7.04 EUR
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TLE4998C8XUMA2 TLE4998C8XUMA2 Infineon Technologies Infineon-TLE4998C8D-DS-v01_01-EN.pdf?fileId=5546d4625b62cd8a015bc891ed2f31ac Description: IC HALL SENSOR LINEAR TDSO-8
Packaging: Cut Tape (CT)
Grade: Automotive
Part Status: Active
Qualification: AEC-Q100
auf Bestellung 4977 Stücke:
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100+8.19 EUR
500+7.68 EUR
1000+7.17 EUR
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FF225R65T3E3P2BPSA1 Infineon Technologies Infineon-FF225R65T3E3-DataSheet-v01_10-EN.pdf?fileId=5546d4627a0b0c7b017a0ea3ac750464 Description: IHV IHM T XHP 3 3-6 5K AG-XHP3K6
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: 2 Independent
Operating Temperature: 125°C (TJ)
Vce(on) (Max) @ Vge, Ic: 3.4V @ 15V, 225A
NTC Thermistor: No
Supplier Device Package: AG-XHP3K65
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 225 A
Voltage - Collector Emitter Breakdown (Max): 5900 V
Power - Max: 1000 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 65.6 nF @ 25 V
Produkt ist nicht verfügbar
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FF225R65T3E3P3BPMA1 Infineon Technologies Infineon-FF225R65T3E3-DataSheet-v01_10-EN.pdf?fileId=5546d4627a0b0c7b017a0ea3ac750464 Description: IHV IHM T XHP 3 3-6 5K AG-XHP3K6
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: 2 Independent
Operating Temperature: 125°C (TJ)
Vce(on) (Max) @ Vge, Ic: 3.4V @ 15V, 225A
NTC Thermistor: No
Supplier Device Package: AG-XHP3K65
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 225 A
Voltage - Collector Emitter Breakdown (Max): 5900 V
Power - Max: 1000 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 65.6 nF @ 25 V
Produkt ist nicht verfügbar
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FF225R65T3E3P4BPMA1 Infineon Technologies Infineon-FF225R65T3E3-DataSheet-v01_10-EN.pdf?fileId=5546d4627a0b0c7b017a0ea3ac750464 Description: IHV IHM T XHP 3 3-6 5K AG-XHP3K6
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: 2 Independent
Operating Temperature: 125°C (TJ)
Vce(on) (Max) @ Vge, Ic: 3.4V @ 15V, 225A
NTC Thermistor: No
Supplier Device Package: AG-XHP3K65
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 225 A
Voltage - Collector Emitter Breakdown (Max): 5900 V
Power - Max: 1000 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 65.6 nF @ 25 V
Produkt ist nicht verfügbar
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FF225R65T3E3P5BPMA1 Infineon Technologies Infineon-FF225R65T3E3-DataSheet-v01_10-EN.pdf?fileId=5546d4627a0b0c7b017a0ea3ac750464 Description: IHV IHM T XHP 3 3-6 5K AG-XHP3K6
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: 2 Independent
Operating Temperature: 125°C (TJ)
Vce(on) (Max) @ Vge, Ic: 3.4V @ 15V, 225A
NTC Thermistor: No
Supplier Device Package: AG-XHP3K65
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 225 A
Voltage - Collector Emitter Breakdown (Max): 5900 V
Power - Max: 1000 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 65.6 nF @ 25 V
Produkt ist nicht verfügbar
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FF225R65T3E3P6BPMA1 Infineon Technologies Infineon-FF225R65T3E3-DataSheet-v01_10-EN.pdf?fileId=5546d4627a0b0c7b017a0ea3ac750464 Description: IHV IHM T XHP 3 3-6 5K AG-XHP3K6
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: 2 Independent
Operating Temperature: 125°C (TJ)
Vce(on) (Max) @ Vge, Ic: 3.4V @ 15V, 225A
NTC Thermistor: No
Supplier Device Package: AG-XHP3K65
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 225 A
Voltage - Collector Emitter Breakdown (Max): 5900 V
Power - Max: 1000 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 65.6 nF @ 25 V
Produkt ist nicht verfügbar
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FF450R33T3E3B5P3BPMA1 Infineon Technologies Description: IHV IHM T XHP 3 3-6 5K AG-XHP3K3
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: 2 Independent
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.75V @ 15V, 450A
NTC Thermistor: No
Supplier Device Package: AG-XHP3K33
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 450 A
Voltage - Collector Emitter Breakdown (Max): 3300 V
Power - Max: 1000 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 84 nF @ 25 V
Produkt ist nicht verfügbar
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SAK-XC822MT-1FRA AA SAK-XC822MT-1FRA AA Infineon Technologies INFNS19723-1.pdf?t.download=true&u=5oefqw Description: IC MCU 8BIT 4KB FLASH 16TSSOP
Packaging: Bulk
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Speed: 24MHz
Program Memory Size: 4KB (4K x 8)
RAM Size: 512 x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: XC800
Data Converters: A/D 4x10b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 2.5V ~ 5.5V
Connectivity: I²C, SSC, UART/USART
Peripherals: Brown-out Detect/Reset, LED, POR, PWM, WDT
Supplier Device Package: PG-TSSOP-16-1
Part Status: Active
Number of I/O: 13
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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XMC1100T016F0008AAXUMA1 XMC1100T016F0008AAXUMA1 Infineon Technologies XMC1100.pdf Description: IC MCU 32BIT 8KB FLASH 16TSSOP
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XMC1202T016X0032AAXUMA1 XMC1202T016X0032AAXUMA1 Infineon Technologies XMC1200.pdf Description: IC MCU 32BIT 32KB FLASH 16TSSOP
Packaging: Cut Tape (CT)
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Speed: 32MHz
Program Memory Size: 32KB (32K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: A/D 11x12b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V
Connectivity: I2C, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, I2S, POR, PWM, WDT
Supplier Device Package: PG-TSSOP-16-8
Part Status: Obsolete
Number of I/O: 11
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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IAUZ40N10S5L120ATMA1 IAUZ40N10S5L120ATMA1 Infineon Technologies Infineon-IAUZ40N10S5L120-DataSheet-v01_01-EN.pdf?fileId=5546d46279cccfdb0179ccd443ce0217 Description: MOSFET_(75V 120V( PG-TSDSON-8
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 46A (Tj)
Rds On (Max) @ Id, Vgs: 12mOhm @ 20A, 10V
Power Dissipation (Max): 62W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 27µA
Supplier Device Package: PG-TSDSON-8-33
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 22.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1589 pF @ 50 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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IM512L6AXKMA1 IM512L6AXKMA1 Infineon Technologies Infineon-IM512-L6A-DS-v02_00-EN.pdf?fileId=5546d46262b31d2e0162d21e08915a28 Description: CIPOS MINI COOLMOS
Packaging: Bulk
Package / Case: 24-PowerDIP Module (1.028", 26.10mm)
Mounting Type: Through Hole
Function: Driver
Current - Output: 10A
Interface: PWM
Operating Temperature: -40°C ~ 125°C
Output Configuration: Half Bridge (2)
Voltage - Supply: 14V ~ 18.5V
Applications: General Purpose
Technology: Power MOSFET
Supplier Device Package: 24-DIP
Motor Type - Stepper: Multiphase
Part Status: Last Time Buy
auf Bestellung 1165 Stücke:
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36+13.73 EUR
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IM512L6AXKMA1 IM512L6AXKMA1 Infineon Technologies Infineon-IM512-L6A-DS-v02_00-EN.pdf?fileId=5546d46262b31d2e0162d21e08915a28 Description: CIPOS MINI COOLMOS
Packaging: Tube
Package / Case: 24-PowerDIP Module (1.028", 26.10mm)
Mounting Type: Through Hole
Function: Driver
Current - Output: 10A
Interface: PWM
Operating Temperature: -40°C ~ 125°C
Output Configuration: Half Bridge (2)
Voltage - Supply: 14V ~ 18.5V
Applications: General Purpose
Technology: Power MOSFET
Supplier Device Package: 24-DIP
Motor Type - Stepper: Multiphase
Part Status: Last Time Buy
Produkt ist nicht verfügbar
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S26KL128SDABHN020 S26KL128SDABHN020 Infineon Technologies Infineon-512-MB_(64_MB)_256-MB_(32_MB)_128-MB_(16_MB)_1.8_V_3.0_V_HYPERFLASH_FAMILY-DataSheet-v14_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed5ca77559f&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integ Description: IC FLASH 128MBIT PAR 24FBGA
auf Bestellung 678 Stücke:
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53+9.54 EUR
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S26KL128SDABHN020 S26KL128SDABHN020 Infineon Technologies Infineon-512-MB_(64_MB)_256-MB_(32_MB)_128-MB_(16_MB)_1.8_V_3.0_V_HYPERFLASH_FAMILY-DataSheet-v14_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed5ca77559f&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integ Description: IC FLASH 128MBIT PAR 24FBGA
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S26KL256SDABHB020 S26KL256SDABHB020 Infineon Technologies Description: IC FLASH 256MBIT PAR 24FBGA
auf Bestellung 678 Stücke:
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41+12.21 EUR
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TLE9845QXXUMA1 TLE9845QXXUMA1 Infineon Technologies Infineon-TLE9845QX-DS-v01_00-EN.pdf?fileId=5546d4625a888733015a892c44910243 Description: EMBEDDED POWER
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TLE9845QXXUMA1 TLE9845QXXUMA1 Infineon Technologies Infineon-TLE9845QX-DS-v01_00-EN.pdf?fileId=5546d4625a888733015a892c44910243 Description: EMBEDDED POWER
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FS75R12KE3B9BPSA1 FS75R12KE3B9BPSA1 Infineon Technologies Infineon-FS75R12KE3_B9-DS-v02_00-en_de.pdf?fileId=db3a30431a5c32f2011a7caf0c5c68d3 Description: IGBT MOD 1200V 105A AG-ECONO2B
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Full Bridge Inverter
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 75A
NTC Thermistor: Yes
Supplier Device Package: AG-ECONO2B
Part Status: Active
Current - Collector (Ic) (Max): 105 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 350 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 5.3 nF @ 25 V
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1+125.24 EUR
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FS75R12KE3BPSA1 FS75R12KE3BPSA1 Infineon Technologies Infineon-FS75R12KE3-DS-v03_00-en_de.pdf?fileId=db3a304412b407950112b4311bfa5380 Description: IGBT MOD 1200V 105A AG-ECONO2B
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Full Bridge Inverter
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 75A
NTC Thermistor: Yes
Supplier Device Package: AG-ECONO2B
Part Status: Active
Current - Collector (Ic) (Max): 105 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 350 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 5.3 nF @ 25 V
auf Bestellung 11 Stücke:
Lieferzeit 10-14 Tag (e)
1+122.9 EUR
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BCR205WH6327 Infineon Technologies Description: DC-DC LED DRIVER AND CONTROL
Packaging: Bulk
Part Status: Active
Produkt ist nicht verfügbar
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S29GL512S11DHA020 S29GL512S11DHA020 Infineon Technologies Infineon-1_GBIT_(128_MBYTE)_512_MBIT_(64_MBYTE)_256_MBIT_(32_MBYTE)_128_MBIT_(16_MBYTE)_3.0_V_GL-S_FLASH_MEMORY-DataSheet-v19_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed07ac14bd5&utm_source=cypress&utm_medium=referral&utm_campai Description: IC FLASH 512MBIT PARALLEL 64FBGA
Packaging: Bulk
Package / Case: 64-LBGA
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 64-FBGA (9x9)
Grade: Automotive
Part Status: Active
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 110 ns
Memory Organization: 32M x 16
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
auf Bestellung 6386 Stücke:
Lieferzeit 10-14 Tag (e)
35+14.56 EUR
Mindestbestellmenge: 35
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IHW20N65R5 Infineon-IHW20N65R5-DS-v02_03-EN.pdf?fileId=5546d461464245d30146ae1140b900d8
IHW20N65R5
Hersteller: Infineon Technologies
Description: INSULATED GATE BIPOLAR TRANSISTO
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 82 ns
Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 20A
Supplier Device Package: PG-TO247-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 24ns/250ns
Switching Energy: 540µJ (on), 160µJ (off)
Test Condition: 400V, 10A, 20Ohm, 15V
Gate Charge: 97 nC
Part Status: Active
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 60 A
Power - Max: 150 W
Produkt ist nicht verfügbar
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IPB330P10NMATMA1 Infineon-IPB330P10NM-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c7bb971ed017bc9a628c74f22
IPB330P10NMATMA1
Hersteller: Infineon Technologies
Description: TRENCH >=100V PG-TO263-3
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 6.9A (Ta), 62A (Tc)
Rds On (Max) @ Id, Vgs: 33mOhm @ 53A, 10V
Power Dissipation (Max): 3.8W (Ta), 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 5.55mA
Supplier Device Package: PG-TO263-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 236 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11000 pF @ 50 V
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1000+2.78 EUR
Mindestbestellmenge: 1000
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IPB330P10NMATMA1 Infineon-IPB330P10NM-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c7bb971ed017bc9a628c74f22
IPB330P10NMATMA1
Hersteller: Infineon Technologies
Description: TRENCH >=100V PG-TO263-3
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 6.9A (Ta), 62A (Tc)
Rds On (Max) @ Id, Vgs: 33mOhm @ 53A, 10V
Power Dissipation (Max): 3.8W (Ta), 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 5.55mA
Supplier Device Package: PG-TO263-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 236 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11000 pF @ 50 V
auf Bestellung 1132 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+5.28 EUR
10+3.89 EUR
100+3.4 EUR
Mindestbestellmenge: 4
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IPD18DP10LMATMA1 Infineon-IPD18DP10LM-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c7bb971ed017bddd1558c1a43
IPD18DP10LMATMA1
Hersteller: Infineon Technologies
Description: TRENCH >=100V PG-TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta), 13.9A (Tc)
Rds On (Max) @ Id, Vgs: 178mOhm @ 13A, 10V
Power Dissipation (Max): 3W (Ta), 83W (Tc)
Vgs(th) (Max) @ Id: 2V @ 1.04mA
Supplier Device Package: PG-TO252-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 50 V
Produkt ist nicht verfügbar
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IPD18DP10LMATMA1 Infineon-IPD18DP10LM-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c7bb971ed017bddd1558c1a43
IPD18DP10LMATMA1
Hersteller: Infineon Technologies
Description: TRENCH >=100V PG-TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta), 13.9A (Tc)
Rds On (Max) @ Id, Vgs: 178mOhm @ 13A, 10V
Power Dissipation (Max): 3W (Ta), 83W (Tc)
Vgs(th) (Max) @ Id: 2V @ 1.04mA
Supplier Device Package: PG-TO252-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 50 V
auf Bestellung 1975 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
7+2.83 EUR
10+1.85 EUR
100+1.24 EUR
500+0.99 EUR
1000+0.92 EUR
Mindestbestellmenge: 7
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IPD19DP10NMATMA1 Infineon-IPD19DP10NM-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c7bb971ed017bde08b35a1bae
IPD19DP10NMATMA1
Hersteller: Infineon Technologies
Description: TRENCH >=100V PG-TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.6A (Ta), 13.7A (Tc)
Rds On (Max) @ Id, Vgs: 186mOhm @ 12A, 10V
Power Dissipation (Max): 3W (Ta), 83W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1.04mA
Supplier Device Package: PG-TO252-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 50 V
Produkt ist nicht verfügbar
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IPD19DP10NMATMA1 Infineon-IPD19DP10NM-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c7bb971ed017bde08b35a1bae
IPD19DP10NMATMA1
Hersteller: Infineon Technologies
Description: TRENCH >=100V PG-TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.6A (Ta), 13.7A (Tc)
Rds On (Max) @ Id, Vgs: 186mOhm @ 12A, 10V
Power Dissipation (Max): 3W (Ta), 83W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1.04mA
Supplier Device Package: PG-TO252-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 50 V
auf Bestellung 173 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
8+2.5 EUR
12+1.51 EUR
100+1.14 EUR
Mindestbestellmenge: 8
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CY14B101NA-ZS45XI Infineon-CY14B101LA_CY14B101NA_1-Mbit_(128_K_8_64_K_16)_nvSRAM-DataSheet-v20_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebd6cf32ff4&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
CY14B101NA-ZS45XI
Hersteller: Infineon Technologies
Description: IC NVSRAM 1MBIT PAR 44TSOP II
Packaging: Bulk
Package / Case: 44-TSOP (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 1Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: NVSRAM (Non-Volatile SRAM)
Memory Format: NVSRAM
Supplier Device Package: 44-TSOP II
Write Cycle Time - Word, Page: 45ns
Memory Interface: Parallel
Access Time: 45 ns
Memory Organization: 64K x 16
DigiKey Programmable: Not Verified
auf Bestellung 668 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
13+39.9 EUR
Mindestbestellmenge: 13
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CY7C1263KV18-550BZXC download
CY7C1263KV18-550BZXC
Hersteller: Infineon Technologies
Description: IC SRAM 36MBIT PAR 165FBGA
Packaging: Bulk
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 36Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, QDR II+
Clock Frequency: 550 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (13x15)
Memory Interface: Parallel
Memory Organization: 2M x 18
DigiKey Programmable: Not Verified
auf Bestellung 272 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+139.2 EUR
Mindestbestellmenge: 4
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CY7C1568KV18-550BZXI download
CY7C1568KV18-550BZXI
Hersteller: Infineon Technologies
Description: IC SRAM 72MBIT PAR 165FBGA
Packaging: Bulk
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 72Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, DDR II+
Clock Frequency: 550 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (13x15)
Part Status: Active
Memory Interface: Parallel
Memory Organization: 4M x 18
DigiKey Programmable: Not Verified
auf Bestellung 275 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+534.41 EUR
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CY7C1570KV18-550BZXC download
CY7C1570KV18-550BZXC
Hersteller: Infineon Technologies
Description: IC SRAM 72MBIT PAR 165FBGA
Packaging: Bulk
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 72Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, DDR II+
Clock Frequency: 550 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (13x15)
Part Status: Active
Memory Interface: Parallel
Memory Organization: 2M x 36
auf Bestellung 218 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+501.58 EUR
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CY7C2168KV18-550BZC Infineon-CY7C2168KV18_CY7C2170KV18_18-Mbit_DDR_II+_SRAM_Two-Word_Burst_Architecture_(2.5_Cycle_Read_Latency)_with_ODT-DataSheet-v11_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec2014936e0&utm_source=cypress&utm_medium=referral&utm_
CY7C2168KV18-550BZC
Hersteller: Infineon Technologies
Description: IC SRAM 18MBIT PAR 165FBGA
Packaging: Bulk
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 18Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, DDR II+
Clock Frequency: 550 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (13x15)
Memory Interface: Parallel
Memory Organization: 1M x 18
DigiKey Programmable: Not Verified
auf Bestellung 516 Stücke:
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Anzahl Preis
5+101.61 EUR
Mindestbestellmenge: 5
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CY7C2170KV18-550BZXC Infineon-CY7C2168KV18_CY7C2170KV18_18-Mbit_DDR_II+_SRAM_Two-Word_Burst_Architecture_(2.5_Cycle_Read_Latency)_with_ODT-DataSheet-v11_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec2014936e0&utm_source=cypress&utm_medium=referral&utm_
CY7C2170KV18-550BZXC
Hersteller: Infineon Technologies
Description: IC SRAM 18MBIT PAR 165FBGA
Packaging: Bulk
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 18Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, DDR II+
Clock Frequency: 550 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (13x15)
Part Status: Active
Memory Interface: Parallel
Memory Organization: 512K x 36
DigiKey Programmable: Not Verified
auf Bestellung 219 Stücke:
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Anzahl Preis
5+101.61 EUR
Mindestbestellmenge: 5
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CY7C2268KV18-550BZC Infineon-CY7C2268KV18_CY7C2270KV18_36-Mbit_DDR_II+_SRAM_Two-Word_Burst_Architecture_(2.5_Cycle_Read_Latency)_with_ODT-DataSheet-v10_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec197363665
CY7C2268KV18-550BZC
Hersteller: Infineon Technologies
Description: IC SRAM 36MBIT PAR 165FBGA
Packaging: Bulk
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 36Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, DDR II+
Clock Frequency: 550 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (13x15)
Memory Interface: Parallel
Memory Organization: 2M x 18
DigiKey Programmable: Not Verified
auf Bestellung 117 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+179.17 EUR
Mindestbestellmenge: 3
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AUIRFN7110TR auirfn7110.pdf?fileId=5546d462533600a4015355b1638a1438
AUIRFN7110TR
Hersteller: Infineon Technologies
Description: MOSFET N-CH 100V 58A 8PQFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 58A (Tc)
Rds On (Max) @ Id, Vgs: 14.5mOhm @ 35A, 10V
Power Dissipation (Max): 4.3W (Ta), 125W (Tc)
Vgs(th) (Max) @ Id: 4V @ 100µA
Supplier Device Package: 8-PQFN (5x6)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3050 pF @ 25 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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FS600R07A2E3BOSA1
Hersteller: Infineon Technologies
Description: MODULE IGBT 600V HYBRID PACK 2
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.6V @ 15V, 400A
NTC Thermistor: Yes
IGBT Type: Trench Field Stop
Part Status: Obsolete
Current - Collector (Ic) (Max): 530 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Power - Max: 1250 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 39 nF @ 25 V
Produkt ist nicht verfügbar
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F3L11MR12W2M1B74BOMA1 Infineon-F3L11MR12W2M1_B74-DataSheet-v02_00-EN.pdf?fileId=5546d46277921c320177b9447dce438e
F3L11MR12W2M1B74BOMA1
Hersteller: Infineon Technologies
Description: LOW POWER EASY
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Level Inverter
Operating Temperature: -40°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.5V @ 15V, 100A
NTC Thermistor: Yes
Supplier Device Package: AG-EASY2B-2
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 9 µA
Input Capacitance (Cies) @ Vce: 21.7 nF @ 25 V
auf Bestellung 14 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+245.59 EUR
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BA595E6327 INFNS15691-1.pdf?t.download=true&u=5oefqw
BA595E6327
Hersteller: Infineon Technologies
Description: BA595 - PIN DIODE
Packaging: Bulk
Package / Case: SC-76, SOD-323
Diode Type: PIN - Single
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 0.6pF @ 10V, 1MHz
Voltage - Peak Reverse (Max): 50V
Supplier Device Package: PG-SOD323-2-1
Part Status: Active
Current - Max: 50 mA
Produkt ist nicht verfügbar
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BA885E6327 INFNS15691-1.pdf?t.download=true&u=5oefqw
BA885E6327
Hersteller: Infineon Technologies
Description: BA885 - PIN DIODE
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Diode Type: PIN - Single
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 0.6pF @ 10V, 1MHz
Voltage - Peak Reverse (Max): 50V
Supplier Device Package: PG-SOT23-3-11
Part Status: Active
Current - Max: 50 mA
auf Bestellung 12000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3752+0.14 EUR
Mindestbestellmenge: 3752
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BA885E6327HTSA1 BA595_885_895_Series.pdf
BA885E6327HTSA1
Hersteller: Infineon Technologies
Description: RF DIODE PIN 50V SOT23-3
auf Bestellung 9000 Stücke:
Lieferzeit 10-14 Tag (e)
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BA892-02V-E6327 INFNS15690-1.pdf?t.download=true&u=5oefqw
BA892-02V-E6327
Hersteller: Infineon Technologies
Description: RECTIFIER DIODE, 35V
Packaging: Bulk
Package / Case: SC-79, SOD-523
Diode Type: Standard - Single
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 1.1pF @ 3V, 1MHz
Resistance @ If, F: 500mOhm @ 10mA, 100MHz
Voltage - Peak Reverse (Max): 35V
Supplier Device Package: PG-SC79-2-1
Part Status: Active
Current - Max: 100 mA
Produkt ist nicht verfügbar
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BA892-02VE6327 INFNS15690-1.pdf?t.download=true&u=5oefqw
BA892-02VE6327
Hersteller: Infineon Technologies
Description: RECTIFIER DIODE, 35V
Packaging: Bulk
Package / Case: SC-79, SOD-523
Diode Type: Standard - Single
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 1.1pF @ 3V, 1MHz
Resistance @ If, F: 500mOhm @ 10mA, 100MHz
Voltage - Peak Reverse (Max): 35V
Supplier Device Package: PG-SC79-2
Part Status: Active
Current - Max: 100 mA
Produkt ist nicht verfügbar
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BA89202LE6327 INFNS15690-1.pdf?t.download=true&u=5oefqw
BA89202LE6327
Hersteller: Infineon Technologies
Description: RECTIFIER DIODE, 35V
Packaging: Bulk
Package / Case: SOD-882
Diode Type: Standard - Single
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 1.1pF @ 3V, 1MHz
Resistance @ If, F: 500mOhm @ 10mA, 100MHz
Voltage - Peak Reverse (Max): 35V
Supplier Device Package: PG-TSLP-2-1
Part Status: Active
Current - Max: 100 mA
auf Bestellung 38046 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4157+0.12 EUR
Mindestbestellmenge: 4157
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BA895-E6327 INFNS15691-1.pdf?t.download=true&u=5oefqw
BA895-E6327
Hersteller: Infineon Technologies
Description: PIN DIODE
Produkt ist nicht verfügbar
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BA895E6327 INFNS15691-1.pdf?t.download=true&u=5oefqw
BA895E6327
Hersteller: Infineon Technologies
Description: PIN DIODE
Packaging: Bulk
Package / Case: SC-80
Diode Type: PIN - Single
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 0.6pF @ 10V, 1MHz
Resistance @ If, F: 7Ohm @ 10mA, 100MHz
Voltage - Peak Reverse (Max): 50V
Supplier Device Package: SCD-80
Part Status: Active
Current - Max: 50 mA
auf Bestellung 21000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
6918+0.065 EUR
Mindestbestellmenge: 6918
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BAL99E6327 INFNS10749-1.pdf?t.download=true&u=5oefqw
BAL99E6327
Hersteller: Infineon Technologies
Description: DIODE GEN PURP 80V 250MA SOT23
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Capacitance @ Vr, F: 1.5pF @ 0V, 1MHz
Current - Average Rectified (Io): 250mA
Supplier Device Package: PG-SOT23
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 1 µA @ 70 V
auf Bestellung 249164 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
8266+0.064 EUR
Mindestbestellmenge: 8266
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BAL99E6327HTSA1 bal99series.pdf?folderId=db3a30431400ef6801141b5844e103ea&fileId=db3a30431400ef6801141b842ae203f6
BAL99E6327HTSA1
Hersteller: Infineon Technologies
Description: DIODE STANDARD 80V 250MA PGSOT23
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Capacitance @ Vr, F: 1.5pF @ 0V, 1MHz
Current - Average Rectified (Io): 250mA
Supplier Device Package: PG-SOT23
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 1 µA @ 70 V
auf Bestellung 403400 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
8266+0.067 EUR
Mindestbestellmenge: 8266
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BAR50-03WE6327 INFNS15693-1.pdf?t.download=true&u=5oefqw
BAR50-03WE6327
Hersteller: Infineon Technologies
Description: PIN DIODE, 50V V(BR)
Packaging: Bulk
Package / Case: SC-76, SOD-323
Diode Type: PIN - Single
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 0.4pF @ 5V, 1MHz
Resistance @ If, F: 4.5Ohm @ 10mA, 100MHz
Voltage - Peak Reverse (Max): 50V
Supplier Device Package: PG-SOD323-2-1
Part Status: Active
Current - Max: 100 mA
Power Dissipation (Max): 250 mW
auf Bestellung 36000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
7493+0.07 EUR
Mindestbestellmenge: 7493
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BAR9002ELSE6327XTSA1 INFNS19426-1.pdf?t.download=true&u=5oefqw
BAR9002ELSE6327XTSA1
Hersteller: Infineon Technologies
Description: RF DIODE PIN 80V 250MW TSSLP-2
Packaging: Tape & Reel (TR)
Package / Case: 0201 (0603 Metric)
Diode Type: PIN - Single
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 0.35pF @ 1V, 1MHz
Resistance @ If, F: 800mOhm @ 10mA, 100MHz
Voltage - Peak Reverse (Max): 80V
Supplier Device Package: PG-TSSLP-2-3
Part Status: Active
Current - Max: 100 mA
Power Dissipation (Max): 250 mW
auf Bestellung 75000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
15000+0.088 EUR
30000+0.086 EUR
45000+0.085 EUR
75000+0.084 EUR
Mindestbestellmenge: 15000
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BAR9002LRHE6327XTSA1 bar90series.pdf
BAR9002LRHE6327XTSA1
Hersteller: Infineon Technologies
Description: RF DIODE PIN 80V 250MW TSLP-2
Packaging: Bulk
Package / Case: SOD-882
Diode Type: PIN - Single
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 0.35pF @ 1V, 1MHz
Resistance @ If, F: 800mOhm @ 10mA, 100MHz
Voltage - Peak Reverse (Max): 80V
Supplier Device Package: PG-TSLP-2-7
Part Status: Obsolete
Current - Max: 100 mA
Power Dissipation (Max): 250 mW
auf Bestellung 2220000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
6918+0.064 EUR
Mindestbestellmenge: 6918
Im Einkaufswagen  Stück im Wert von  UAH
TLE4998C3CHAMA1 TLE4998C3C_Data_Sheet_Rev1.1.pdf?folderId=db3a30431ce5fb52011d3dd6e8012582&fileId=db3a30431ce5fb52011d3e52cfdd259e
TLE4998C3CHAMA1
Hersteller: Infineon Technologies
Description: SENSOR HALL PWM SSO3-10
Features: Selectable Scale, Temperature Compensated
Packaging: Bulk
Package / Case: 3-SSIP, SSO-3-10
Output Type: PWM
Mounting Type: Through Hole
Axis: Single
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 4.5V ~ 5.5V
Bandwidth: Programmable
Technology: Hall Effect
Resolution: 16 b
Sensing Range: ±50mT, ±100mT, ±200mT
Current - Output (Max): 5mA
Current - Supply (Max): 8mA
Supplier Device Package: PG-SSO-3-10
Grade: Automotive
Qualification: AEC-Q100
auf Bestellung 7500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
118+4.15 EUR
Mindestbestellmenge: 118
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TLE4998P3C Infineon-TLE4998P3C-DS-v01_01-en.pdf?fileId=db3a30431ce5fb52011d3ea4f5e225b8
TLE4998P3C
Hersteller: Infineon Technologies
Description: TLE4998 - PROGRAMMABLE LINEAR HA
auf Bestellung 2887 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
76+7.11 EUR
Mindestbestellmenge: 76
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TLE4998P4 Infineon-TLE4998P-DS-v01_00-en.pdf?fileId=db3a30431ce5fb52011d3e9a9f3425b1
Hersteller: Infineon Technologies
Description: TLE4998 - PROGRAMMABLE LINEAR HA
Features: Selectable Scale, Temperature Compensated
Packaging: Bulk
Package / Case: 4-SIP, SSO-4-1
Output Type: PWM
Mounting Type: Through Hole
Axis: Single
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 4.5V ~ 5.5V
Bandwidth: Programmable
Technology: Hall Effect
Resolution: 12 b
Sensing Range: ±50mT, ±100mT, ±200mT
Current - Output (Max): 5mA
Current - Supply (Max): 8mA
Supplier Device Package: PG-SSO-4-1
Part Status: Active
auf Bestellung 1790 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
139+3.61 EUR
Mindestbestellmenge: 139
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TLE4998P4HALA1 TLE4998P_Data_Sheet_V1.0.pdf?folderId=db3a30431ce5fb52011d3dd6e8012582&fileId=db3a30431ce5fb52011d3e9a9f3425b1
TLE4998P4HALA1
Hersteller: Infineon Technologies
Description: SENSOR HALL EFFECT PWM SSO4
Features: Selectable Scale, Temperature Compensated
Packaging: Bulk
Package / Case: 4-SIP, SSO-4-1
Output Type: PWM
Mounting Type: Through Hole
Axis: Single
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 4.5V ~ 5.5V
Bandwidth: Programmable
Technology: Hall Effect
Resolution: 12 b
Sensing Range: ±50mT, ±100mT, ±200mT
Current - Output (Max): 5mA
Current - Supply (Max): 8mA
Supplier Device Package: PG-SSO-4-1
Grade: Automotive
Part Status: Active
Qualification: AEC-Q100
auf Bestellung 1778 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
129+3.68 EUR
Mindestbestellmenge: 129
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TLE4998S3C Infineon-TLE4998S3C-DS-v01_01-en.pdf?fileId=db3a30431ce5fb52011d3ecb064425c2
TLE4998S3C
Hersteller: Infineon Technologies
Description: TLE4998 - PROGRAMMABLE LINEAR HA
Features: Selectable Scale, Temperature Compensated
Packaging: Bulk
Package / Case: 3-SSIP Module
Output Type: SENT
Mounting Type: Through Hole
Axis: Single
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 4.5V ~ 5.5V
Bandwidth: Programmable
Technology: Hall Effect
Resolution: 16 b
Sensing Range: ±50mT, ±100mT, ±200mT
Current - Output (Max): 5mA
Current - Supply (Max): 8mA
Supplier Device Package: PG-SSO-3-92
auf Bestellung 19068 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
115+4.36 EUR
Mindestbestellmenge: 115
Im Einkaufswagen  Stück im Wert von  UAH
TLE4998C8DXUMA2 Infineon-TLE4998C8D-DS-v01_01-EN.pdf?fileId=5546d4625b62cd8a015bc891ed2f31ac
TLE4998C8DXUMA2
Hersteller: Infineon Technologies
Description: IC HALL SENSOR LINEAR TDSO-8
Packaging: Tape & Reel (TR)
Grade: Automotive
Part Status: Active
Qualification: AEC-Q100
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2500+6.2 EUR
Mindestbestellmenge: 2500
Im Einkaufswagen  Stück im Wert von  UAH
TLE4998C8DXUMA2 Infineon-TLE4998C8D-DS-v01_01-EN.pdf?fileId=5546d4625b62cd8a015bc891ed2f31ac
TLE4998C8DXUMA2
Hersteller: Infineon Technologies
Description: IC HALL SENSOR LINEAR TDSO-8
Packaging: Cut Tape (CT)
Grade: Automotive
Part Status: Active
Qualification: AEC-Q100
auf Bestellung 4455 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+11.26 EUR
10+9.02 EUR
25+8.34 EUR
100+7.21 EUR
500+6.76 EUR
1000+6.31 EUR
Mindestbestellmenge: 2
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TLE4998C8XUMA2 Infineon-TLE4998C8D-DS-v01_01-EN.pdf?fileId=5546d4625b62cd8a015bc891ed2f31ac
TLE4998C8XUMA2
Hersteller: Infineon Technologies
Description: IC HALL SENSOR LINEAR TDSO-8
Packaging: Tape & Reel (TR)
Grade: Automotive
Part Status: Active
Qualification: AEC-Q100
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2500+7.04 EUR
Mindestbestellmenge: 2500
Im Einkaufswagen  Stück im Wert von  UAH
TLE4998C8XUMA2 Infineon-TLE4998C8D-DS-v01_01-EN.pdf?fileId=5546d4625b62cd8a015bc891ed2f31ac
TLE4998C8XUMA2
Hersteller: Infineon Technologies
Description: IC HALL SENSOR LINEAR TDSO-8
Packaging: Cut Tape (CT)
Grade: Automotive
Part Status: Active
Qualification: AEC-Q100
auf Bestellung 4977 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+12.8 EUR
10+10.24 EUR
25+9.47 EUR
100+8.19 EUR
500+7.68 EUR
1000+7.17 EUR
Mindestbestellmenge: 2
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FF225R65T3E3P2BPSA1 Infineon-FF225R65T3E3-DataSheet-v01_10-EN.pdf?fileId=5546d4627a0b0c7b017a0ea3ac750464
Hersteller: Infineon Technologies
Description: IHV IHM T XHP 3 3-6 5K AG-XHP3K6
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: 2 Independent
Operating Temperature: 125°C (TJ)
Vce(on) (Max) @ Vge, Ic: 3.4V @ 15V, 225A
NTC Thermistor: No
Supplier Device Package: AG-XHP3K65
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 225 A
Voltage - Collector Emitter Breakdown (Max): 5900 V
Power - Max: 1000 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 65.6 nF @ 25 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
FF225R65T3E3P3BPMA1 Infineon-FF225R65T3E3-DataSheet-v01_10-EN.pdf?fileId=5546d4627a0b0c7b017a0ea3ac750464
Hersteller: Infineon Technologies
Description: IHV IHM T XHP 3 3-6 5K AG-XHP3K6
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: 2 Independent
Operating Temperature: 125°C (TJ)
Vce(on) (Max) @ Vge, Ic: 3.4V @ 15V, 225A
NTC Thermistor: No
Supplier Device Package: AG-XHP3K65
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 225 A
Voltage - Collector Emitter Breakdown (Max): 5900 V
Power - Max: 1000 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 65.6 nF @ 25 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
FF225R65T3E3P4BPMA1 Infineon-FF225R65T3E3-DataSheet-v01_10-EN.pdf?fileId=5546d4627a0b0c7b017a0ea3ac750464
Hersteller: Infineon Technologies
Description: IHV IHM T XHP 3 3-6 5K AG-XHP3K6
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: 2 Independent
Operating Temperature: 125°C (TJ)
Vce(on) (Max) @ Vge, Ic: 3.4V @ 15V, 225A
NTC Thermistor: No
Supplier Device Package: AG-XHP3K65
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 225 A
Voltage - Collector Emitter Breakdown (Max): 5900 V
Power - Max: 1000 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 65.6 nF @ 25 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
FF225R65T3E3P5BPMA1 Infineon-FF225R65T3E3-DataSheet-v01_10-EN.pdf?fileId=5546d4627a0b0c7b017a0ea3ac750464
Hersteller: Infineon Technologies
Description: IHV IHM T XHP 3 3-6 5K AG-XHP3K6
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: 2 Independent
Operating Temperature: 125°C (TJ)
Vce(on) (Max) @ Vge, Ic: 3.4V @ 15V, 225A
NTC Thermistor: No
Supplier Device Package: AG-XHP3K65
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 225 A
Voltage - Collector Emitter Breakdown (Max): 5900 V
Power - Max: 1000 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 65.6 nF @ 25 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
FF225R65T3E3P6BPMA1 Infineon-FF225R65T3E3-DataSheet-v01_10-EN.pdf?fileId=5546d4627a0b0c7b017a0ea3ac750464
Hersteller: Infineon Technologies
Description: IHV IHM T XHP 3 3-6 5K AG-XHP3K6
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: 2 Independent
Operating Temperature: 125°C (TJ)
Vce(on) (Max) @ Vge, Ic: 3.4V @ 15V, 225A
NTC Thermistor: No
Supplier Device Package: AG-XHP3K65
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 225 A
Voltage - Collector Emitter Breakdown (Max): 5900 V
Power - Max: 1000 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 65.6 nF @ 25 V
Produkt ist nicht verfügbar
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FF450R33T3E3B5P3BPMA1
Hersteller: Infineon Technologies
Description: IHV IHM T XHP 3 3-6 5K AG-XHP3K3
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: 2 Independent
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.75V @ 15V, 450A
NTC Thermistor: No
Supplier Device Package: AG-XHP3K33
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 450 A
Voltage - Collector Emitter Breakdown (Max): 3300 V
Power - Max: 1000 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 84 nF @ 25 V
Produkt ist nicht verfügbar
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SAK-XC822MT-1FRA AA INFNS19723-1.pdf?t.download=true&u=5oefqw
SAK-XC822MT-1FRA AA
Hersteller: Infineon Technologies
Description: IC MCU 8BIT 4KB FLASH 16TSSOP
Packaging: Bulk
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Speed: 24MHz
Program Memory Size: 4KB (4K x 8)
RAM Size: 512 x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: XC800
Data Converters: A/D 4x10b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 2.5V ~ 5.5V
Connectivity: I²C, SSC, UART/USART
Peripherals: Brown-out Detect/Reset, LED, POR, PWM, WDT
Supplier Device Package: PG-TSSOP-16-1
Part Status: Active
Number of I/O: 13
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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XMC1100T016F0008AAXUMA1 XMC1100.pdf
XMC1100T016F0008AAXUMA1
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 8KB FLASH 16TSSOP
Produkt ist nicht verfügbar
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XMC1202T016X0032AAXUMA1 XMC1200.pdf
XMC1202T016X0032AAXUMA1
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 32KB FLASH 16TSSOP
Packaging: Cut Tape (CT)
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Speed: 32MHz
Program Memory Size: 32KB (32K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: A/D 11x12b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V
Connectivity: I2C, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, I2S, POR, PWM, WDT
Supplier Device Package: PG-TSSOP-16-8
Part Status: Obsolete
Number of I/O: 11
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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IAUZ40N10S5L120ATMA1 Infineon-IAUZ40N10S5L120-DataSheet-v01_01-EN.pdf?fileId=5546d46279cccfdb0179ccd443ce0217
IAUZ40N10S5L120ATMA1
Hersteller: Infineon Technologies
Description: MOSFET_(75V 120V( PG-TSDSON-8
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 46A (Tj)
Rds On (Max) @ Id, Vgs: 12mOhm @ 20A, 10V
Power Dissipation (Max): 62W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 27µA
Supplier Device Package: PG-TSDSON-8-33
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 22.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1589 pF @ 50 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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IM512L6AXKMA1 Infineon-IM512-L6A-DS-v02_00-EN.pdf?fileId=5546d46262b31d2e0162d21e08915a28
IM512L6AXKMA1
Hersteller: Infineon Technologies
Description: CIPOS MINI COOLMOS
Packaging: Bulk
Package / Case: 24-PowerDIP Module (1.028", 26.10mm)
Mounting Type: Through Hole
Function: Driver
Current - Output: 10A
Interface: PWM
Operating Temperature: -40°C ~ 125°C
Output Configuration: Half Bridge (2)
Voltage - Supply: 14V ~ 18.5V
Applications: General Purpose
Technology: Power MOSFET
Supplier Device Package: 24-DIP
Motor Type - Stepper: Multiphase
Part Status: Last Time Buy
auf Bestellung 1165 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
36+13.73 EUR
Mindestbestellmenge: 36
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IM512L6AXKMA1 Infineon-IM512-L6A-DS-v02_00-EN.pdf?fileId=5546d46262b31d2e0162d21e08915a28
IM512L6AXKMA1
Hersteller: Infineon Technologies
Description: CIPOS MINI COOLMOS
Packaging: Tube
Package / Case: 24-PowerDIP Module (1.028", 26.10mm)
Mounting Type: Through Hole
Function: Driver
Current - Output: 10A
Interface: PWM
Operating Temperature: -40°C ~ 125°C
Output Configuration: Half Bridge (2)
Voltage - Supply: 14V ~ 18.5V
Applications: General Purpose
Technology: Power MOSFET
Supplier Device Package: 24-DIP
Motor Type - Stepper: Multiphase
Part Status: Last Time Buy
Produkt ist nicht verfügbar
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S26KL128SDABHN020 Infineon-512-MB_(64_MB)_256-MB_(32_MB)_128-MB_(16_MB)_1.8_V_3.0_V_HYPERFLASH_FAMILY-DataSheet-v14_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed5ca77559f&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integ
S26KL128SDABHN020
Hersteller: Infineon Technologies
Description: IC FLASH 128MBIT PAR 24FBGA
auf Bestellung 678 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
53+9.54 EUR
Mindestbestellmenge: 53
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S26KL128SDABHN020 Infineon-512-MB_(64_MB)_256-MB_(32_MB)_128-MB_(16_MB)_1.8_V_3.0_V_HYPERFLASH_FAMILY-DataSheet-v14_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed5ca77559f&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integ
S26KL128SDABHN020
Hersteller: Infineon Technologies
Description: IC FLASH 128MBIT PAR 24FBGA
Produkt ist nicht verfügbar
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S26KL256SDABHB020
S26KL256SDABHB020
Hersteller: Infineon Technologies
Description: IC FLASH 256MBIT PAR 24FBGA
auf Bestellung 678 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
41+12.21 EUR
Mindestbestellmenge: 41
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TLE9845QXXUMA1 Infineon-TLE9845QX-DS-v01_00-EN.pdf?fileId=5546d4625a888733015a892c44910243
TLE9845QXXUMA1
Hersteller: Infineon Technologies
Description: EMBEDDED POWER
Produkt ist nicht verfügbar
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TLE9845QXXUMA1 Infineon-TLE9845QX-DS-v01_00-EN.pdf?fileId=5546d4625a888733015a892c44910243
TLE9845QXXUMA1
Hersteller: Infineon Technologies
Description: EMBEDDED POWER
auf Bestellung 230 Stücke:
Lieferzeit 10-14 Tag (e)
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FS75R12KE3B9BPSA1 Infineon-FS75R12KE3_B9-DS-v02_00-en_de.pdf?fileId=db3a30431a5c32f2011a7caf0c5c68d3
FS75R12KE3B9BPSA1
Hersteller: Infineon Technologies
Description: IGBT MOD 1200V 105A AG-ECONO2B
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Full Bridge Inverter
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 75A
NTC Thermistor: Yes
Supplier Device Package: AG-ECONO2B
Part Status: Active
Current - Collector (Ic) (Max): 105 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 350 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 5.3 nF @ 25 V
auf Bestellung 13 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+125.24 EUR
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FS75R12KE3BPSA1 Infineon-FS75R12KE3-DS-v03_00-en_de.pdf?fileId=db3a304412b407950112b4311bfa5380
FS75R12KE3BPSA1
Hersteller: Infineon Technologies
Description: IGBT MOD 1200V 105A AG-ECONO2B
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Full Bridge Inverter
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 75A
NTC Thermistor: Yes
Supplier Device Package: AG-ECONO2B
Part Status: Active
Current - Collector (Ic) (Max): 105 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 350 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 5.3 nF @ 25 V
auf Bestellung 11 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+122.9 EUR
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BCR205WH6327
Hersteller: Infineon Technologies
Description: DC-DC LED DRIVER AND CONTROL
Packaging: Bulk
Part Status: Active
Produkt ist nicht verfügbar
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S29GL512S11DHA020 Infineon-1_GBIT_(128_MBYTE)_512_MBIT_(64_MBYTE)_256_MBIT_(32_MBYTE)_128_MBIT_(16_MBYTE)_3.0_V_GL-S_FLASH_MEMORY-DataSheet-v19_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed07ac14bd5&utm_source=cypress&utm_medium=referral&utm_campai
S29GL512S11DHA020
Hersteller: Infineon Technologies
Description: IC FLASH 512MBIT PARALLEL 64FBGA
Packaging: Bulk
Package / Case: 64-LBGA
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 64-FBGA (9x9)
Grade: Automotive
Part Status: Active
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 110 ns
Memory Organization: 32M x 16
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
auf Bestellung 6386 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
35+14.56 EUR
Mindestbestellmenge: 35
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