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IPTG014N10NM5ATMA1 IPTG014N10NM5ATMA1 Infineon Technologies Infineon-IPTG014N10NM5-DataSheet-v02_00-EN.pdf?fileId=5546d46277921c320177aa3f74d57d58 Description: MOSFET N-CH 100V 37A/366A HSOG-8
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSMD, Gull Wing
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 37A (Ta), 366A (Tc)
Rds On (Max) @ Id, Vgs: 1.4mOhm @ 150A, 10V
Power Dissipation (Max): 3.8W (Ta), 375W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 280µA
Supplier Device Package: PG-HSOG-8-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 211 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 16000 pF @ 50 V
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IPTG014N10NM5ATMA1 IPTG014N10NM5ATMA1 Infineon Technologies Infineon-IPTG014N10NM5-DataSheet-v02_00-EN.pdf?fileId=5546d46277921c320177aa3f74d57d58 Description: MOSFET N-CH 100V 37A/366A HSOG-8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSMD, Gull Wing
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 37A (Ta), 366A (Tc)
Rds On (Max) @ Id, Vgs: 1.4mOhm @ 150A, 10V
Power Dissipation (Max): 3.8W (Ta), 375W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 280µA
Supplier Device Package: PG-HSOG-8-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 211 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 16000 pF @ 50 V
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BSM50GD120DLCBPSA1 Infineon Technologies Description: IGBT MODULE 1200V 85A AG-ECONO2A
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Full Bridge Inverter
Operating Temperature: 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 50A
NTC Thermistor: No
Supplier Device Package: AG-ECONO2A
Part Status: Last Time Buy
Current - Collector (Ic) (Max): 85 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 350 W
Current - Collector Cutoff (Max): 84 µA
Input Capacitance (Cies) @ Vce: 3.3 nF @ 25 V
Produkt ist nicht verfügbar
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BSM50GD120DN2BPSA1 Infineon Technologies Description: IGBT MODULE 1200V 72A AG-ECONO2A
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Full Bridge
Operating Temperature: 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 50A
NTC Thermistor: No
Supplier Device Package: AG-ECONO2A
Part Status: Last Time Buy
Current - Collector (Ic) (Max): 72 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 350 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 3.3 nF @ 25 V
Produkt ist nicht verfügbar
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MB90F882PMC-GSE1 MB90F882PMC-GSE1 Infineon Technologies 5047 Description: IC MCU 16BIT 256KB FLASH 100LQFP
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Speed: 33MHz
Program Memory Size: 256KB (256K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
Core Processor: F²MC-16LX
Data Converters: A/D 20x8/10b
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 2.7V ~ 3.6V
Connectivity: I2C, Serial I/O, UART/USART
Peripherals: DMA, POR, PWM, WDT
Supplier Device Package: 100-LQFP (14x14)
Number of I/O: 83
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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S26KS512SDPBHN020 S26KS512SDPBHN020 Infineon Technologies Infineon-512-MB_(64_MB)_256-MB_(32_MB)_128-MB_(16_MB)_1.8_V_3.0_V_HYPERFLASH_FAMILY-DataSheet-v14_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed5ca77559f&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integ Description: IC FLASH 512MBIT HYPERBUS 24FBGA
Packaging: Tray
Package / Case: 24-VBGA
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.7V ~ 1.95V
Technology: FLASH - NOR
Clock Frequency: 166 MHz
Memory Format: FLASH
Supplier Device Package: 24-FBGA (6x8)
Part Status: Active
Memory Interface: HyperBus
Access Time: 96 ns
Memory Organization: 64M x 8
DigiKey Programmable: Not Verified
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S26KS512SDABHI030 S26KS512SDABHI030 Infineon Technologies Infineon-512-MB_(64_MB)_256-MB_(32_MB)_128-MB_(16_MB)_1.8_V_3.0_V_HYPERFLASH_FAMILY-DataSheet-v15_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed5ca77559f Description: IC FLASH 512MBIT HYPERBUS 24FBGA
Packaging: Tray
Package / Case: 24-VBGA
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 1.95V
Technology: FLASH - NOR
Clock Frequency: 100 MHz
Memory Format: FLASH
Supplier Device Package: 24-FBGA (6x8)
Memory Interface: HyperBus
Access Time: 96 ns
Memory Organization: 64M x 8
DigiKey Programmable: Not Verified
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S26KS512SDPBHB020 S26KS512SDPBHB020 Infineon Technologies Infineon-512-MB_(64_MB)_256-MB_(32_MB)_128-MB_(16_MB)_1.8_V_3.0_V_HYPERFLASH_FAMILY-DataSheet-v15_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed5ca77559f Description: IC FLASH 512MBIT HYPERBUS 24FBGA
Qualification: AEC-Q100
Grade: Automotive
Memory Organization: 64M x 8
Access Time: 96 ns
Memory Interface: HyperBus
Part Status: Active
Supplier Device Package: 24-FBGA (6x8)
Memory Format: FLASH
Clock Frequency: 166 MHz
Technology: FLASH - NOR
Voltage - Supply: 1.7V ~ 1.95V
Operating Temperature: -40°C ~ 105°C (TA)
Memory Type: Non-Volatile
Memory Size: 512Mbit
Mounting Type: Surface Mount
Package / Case: 24-VBGA
Packaging: Tray
DigiKey Programmable: Not Verified
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25+21.67 EUR
50+21.13 EUR
100+20.61 EUR
338+19.72 EUR
676+19.6 EUR
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ETD580N16P60HPSA1 ETD580N16P60HPSA1 Infineon Technologies Infineon-eTT580N16P60-DS-v03_06-EN.pdf?fileId=5546d46265487f7b01658027a49f34b0 Description: SCR MODULE 1.6KV 700A MODULE
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ETD580N16P60HPSA1 ETD580N16P60HPSA1 Infineon Technologies Infineon-eTT580N16P60-DS-v03_06-EN.pdf?fileId=5546d46265487f7b01658027a49f34b0 Description: SCR MODULE 1.6KV 700A MODULE
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ETT510N16P60HPSA1 ETT510N16P60HPSA1 Infineon Technologies Infineon-eTT510N16P60-DS-v03_05-EN.pdf?fileId=5546d46265487f7b01658027aea734b3 Description: SCR MODULE 1.6KV 700A MODULE
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 135°C (TC)
Structure: Series Connection - All SCRs
Current - Hold (Ih) (Max): 300 mA
Current - Gate Trigger (Igt) (Max): 250 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 15300A @ 50Hz
Number of SCRs, Diodes: 2 SCRs
Current - On State (It (AV)) (Max): 515 A
Voltage - Gate Trigger (Vgt) (Max): 2 V
Part Status: Obsolete
Current - On State (It (RMS)) (Max): 700 A
Voltage - Off State: 1.6 kV
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ETD630N16P60HPSA1 ETD630N16P60HPSA1 Infineon Technologies Infineon-DS_eTT630N16P60-DS-v03_01-EN.pdf?fileId=5546d46265f064ff01668579447e6418 Description: SCR MODULE 1.6KV 700A MODULE
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 135°C (TC)
Structure: Series Connection - SCR/Diode
Current - Hold (Ih) (Max): 300 mA
Current - Gate Trigger (Igt) (Max): 250 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 19800A @ 50Hz
Number of SCRs, Diodes: 1 SCR, 1 Diode
Current - On State (It (AV)) (Max): 635 A
Voltage - Gate Trigger (Vgt) (Max): 2 V
Current - On State (It (RMS)) (Max): 700 A
Voltage - Off State: 1.6 kV
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ETD630N16P60HPSA1 ETD630N16P60HPSA1 Infineon Technologies Infineon-DS_eTT630N16P60-DS-v03_01-EN.pdf?fileId=5546d46265f064ff01668579447e6418 Description: SCR MODULE 1.6KV 700A MODULE
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 135°C (TC)
Structure: Series Connection - SCR/Diode
Current - Hold (Ih) (Max): 300 mA
Current - Gate Trigger (Igt) (Max): 250 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 19800A @ 50Hz
Number of SCRs, Diodes: 1 SCR, 1 Diode
Current - On State (It (AV)) (Max): 635 A
Voltage - Gate Trigger (Vgt) (Max): 2 V
Current - On State (It (RMS)) (Max): 700 A
Voltage - Off State: 1.6 kV
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ETT580N16P60HPSA1 ETT580N16P60HPSA1 Infineon Technologies Infineon-eTT580N16P60-DS-v03_06-EN.pdf?fileId=5546d46265487f7b01658027a49f34b0 Description: SCR MODULE 1.6KV 700A MODULE
Voltage - Off State: 1.6 kV
Current - On State (It (RMS)) (Max): 700 A
Voltage - Gate Trigger (Vgt) (Max): 2 V
Current - On State (It (AV)) (Max): 586 A
Number of SCRs, Diodes: 2 SCRs
Current - Non Rep. Surge 50, 60Hz (Itsm): 16500A @ 50Hz
Current - Gate Trigger (Igt) (Max): 250 mA
Current - Hold (Ih) (Max): 300 mA
Structure: Series Connection - All SCRs
Operating Temperature: -40°C ~ 135°C (TC)
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Tray
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ETT630N16P60HPSA1 ETT630N16P60HPSA1 Infineon Technologies Infineon-DS_eTT630N16P60-DS-v03_01-EN.pdf?fileId=5546d46265f064ff01668579447e6418 Description: SCR MODULE 1.6KV 700A MODULE
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 135°C (TC)
Structure: Series Connection - All SCRs
Current - Hold (Ih) (Max): 300 mA
Current - Gate Trigger (Igt) (Max): 250 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 19800A @ 50Hz
Number of SCRs, Diodes: 2 SCRs
Current - On State (It (AV)) (Max): 635 A
Voltage - Gate Trigger (Vgt) (Max): 2 V
Part Status: Active
Current - On State (It (RMS)) (Max): 700 A
Voltage - Off State: 1.6 kV
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ETD510N16P60HPSA1 ETD510N16P60HPSA1 Infineon Technologies Infineon-eTT510N16P60-DS-v03_05-EN.pdf?fileId=5546d46265487f7b01658027aea734b3 Description: SCR MODULE 1.6KV 700A MODULE
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 135°C (TC)
Structure: Series Connection - SCR/Diode
Current - Hold (Ih) (Max): 300 mA
Current - Gate Trigger (Igt) (Max): 250 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 15300A @ 50Hz
Number of SCRs, Diodes: 1 SCR, 1 Diode
Current - On State (It (AV)) (Max): 515 A
Voltage - Gate Trigger (Vgt) (Max): 2 V
Part Status: Obsolete
Current - On State (It (RMS)) (Max): 700 A
Voltage - Off State: 1.6 kV
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IPB65R190CFD7AATMA1 IPB65R190CFD7AATMA1 Infineon Technologies Infineon-IPB65R190CFD7A-DataSheet-v02_00-EN.pdf?fileId=5546d4627506bb3201751c530f6542c3 Description: MOSFET N-CH 650V 14A TO263-3
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 6.4A, 10V
Power Dissipation (Max): 77W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 320µA
Supplier Device Package: PG-TO263-3
Part Status: Active
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1291 pF @ 400 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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IPB65R190CFD7AATMA1 IPB65R190CFD7AATMA1 Infineon Technologies Infineon-IPB65R190CFD7A-DataSheet-v02_00-EN.pdf?fileId=5546d4627506bb3201751c530f6542c3 Description: MOSFET N-CH 650V 14A TO263-3
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 6.4A, 10V
Power Dissipation (Max): 77W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 320µA
Supplier Device Package: PG-TO263-3
Part Status: Active
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1291 pF @ 400 V
Grade: Automotive
Qualification: AEC-Q101
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IPWS65R035CFD7AXKSA1 IPWS65R035CFD7AXKSA1 Infineon Technologies Infineon-IPWS65R035CFD7A-DataSheet-v02_00-EN.pdf?fileId=5546d46272e49d2a01730e4a600f28f9 Description: MOSFET N-CH 650V 63A TO247-3-41
Qualification: AEC-Q101
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PG-TO247-3-41
Vgs(th) (Max) @ Id: 4.5V @ 1.79mA
Power Dissipation (Max): 305W (Tc)
Rds On (Max) @ Id, Vgs: 35mOhm @ 35.8A, 10V
Current - Continuous Drain (Id) @ 25°C: 63A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 7149 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 145 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±20V
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IKZ50N65ES5XKSA1 IKZ50N65ES5XKSA1 Infineon Technologies Infineon-IKZ50N65ES5-DS-v02_01-EN.pdf?fileId=5546d4625bd71aa0015bd8175c56052a Description: IGBT TRENCH 650V 80A TO247-4
Packaging: Bulk
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 62 ns
Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 50A
Supplier Device Package: PG-TO247-4
IGBT Type: Trench
Td (on/off) @ 25°C: 36ns/294ns
Switching Energy: 770µJ (on), 880µJ (off)
Test Condition: 400V, 25A, 23.1Ohm, 15V
Gate Charge: 120 nC
Part Status: Active
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 200 A
Power - Max: 274 W
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FP50R12W2T7BPSA1 FP50R12W2T7BPSA1 Infineon Technologies Infineon-FP50R12W2T7-DataSheet-v02_00-EN.pdf?fileId=5546d46273a5366f017426941cbf65f1 Description: IGBT MODULE 1200V 50A AG-EASY2B
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Three Phase Bridge Rectifier
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 175°C (TJ)
NTC Thermistor: Yes
Supplier Device Package: AG-EASY2B
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 50 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 8 µA
Input Capacitance (Cies) @ Vce: 11.1 nF @ 25 V
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FP50R12W2T7PB11BPSA1 Infineon Technologies Description: LOW POWER EASY AG-EASY2B-2
Input Capacitance (Cies) @ Vce: 11.1 nF @ 25 V
Current - Collector Cutoff (Max): 8 µA
Power - Max: 20 mW
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 50 A
Part Status: Active
IGBT Type: Trench Field Stop
Supplier Device Package: AG-EASY2B
NTC Thermistor: Yes
Operating Temperature: -40°C ~ 175°C (TJ)
Configuration: Three Phase Inverter
Input: Three Phase Bridge Rectifier
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Tray
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F415MR12W2M1B76BOMA1 Infineon Technologies Description: LOW POWER EASY AG-EASY2B-2
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PXP1600CPQG003XUMA1 Infineon Technologies Description: IC CONTROLLER
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1EDI3031ASXUMA1 1EDI3031ASXUMA1 Infineon Technologies Infineon-1EDI3031AS-DataSheet-v01_00-EN.pdf?fileId=5546d4627956d53f01798965edc10c5d Description: DGT ISO 5.7KV 1CH GT DVR DSO20
Qualification: AEC-Q100
Voltage - Output Supply: 3V ~ 5.5V
Number of Channels: 1
Grade: Automotive
Pulse Width Distortion (Max): 20ns
Propagation Delay tpLH / tpHL (Max): 120ns, 120ns
Common Mode Transient Immunity (Min): 150kV/µs
Rise / Fall Time (Typ): 55ns, 45ns (Max)
Supplier Device Package: PG-DSO-20-91
Approval Agency: UL, VDE
Voltage - Isolation: 5700Vrms
Current - Output High, Low: 20A, 20A
Technology: Magnetic Coupling
Current - Peak Output: 12A
Operating Temperature: -40°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: 20-BFSOP (0.295", 7.50mm Width)
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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1EDI3031ASXUMA1 1EDI3031ASXUMA1 Infineon Technologies Infineon-1EDI3031AS-DataSheet-v01_00-EN.pdf?fileId=5546d4627956d53f01798965edc10c5d Description: DGT ISO 5.7KV 1CH GT DVR DSO20
Qualification: AEC-Q100
Voltage - Output Supply: 3V ~ 5.5V
Number of Channels: 1
Grade: Automotive
Pulse Width Distortion (Max): 20ns
Propagation Delay tpLH / tpHL (Max): 120ns, 120ns
Common Mode Transient Immunity (Min): 150kV/µs
Rise / Fall Time (Typ): 55ns, 45ns (Max)
Supplier Device Package: PG-DSO-20-91
Approval Agency: UL, VDE
Voltage - Isolation: 5700Vrms
Current - Output High, Low: 20A, 20A
Technology: Magnetic Coupling
Current - Peak Output: 12A
Operating Temperature: -40°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: 20-BFSOP (0.295", 7.50mm Width)
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
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1EDI3021ASXUMA1 1EDI3021ASXUMA1 Infineon Technologies Infineon-1EDI3021AS-DataSheet-v01_00-EN.pdf?fileId=5546d4627956d53f0179895c864a0c54 Description: DGT ISO 5.7KV 1CH GT DVR DSO20
Qualification: AEC-Q100
Voltage - Output Supply: 3V ~ 5.5V
Number of Channels: 1
Grade: Automotive
Pulse Width Distortion (Max): 20ns
Propagation Delay tpLH / tpHL (Max): 120ns, 120ns
Common Mode Transient Immunity (Min): 150kV/µs
Rise / Fall Time (Typ): 55ns, 45ns (Max)
Supplier Device Package: PG-DSO-20-91
Approval Agency: UL, VDE
Voltage - Isolation: 5700Vrms
Current - Output High, Low: 20A, 20A
Technology: Magnetic Coupling
Current - Peak Output: 12A
Operating Temperature: -40°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: 20-BFSOP (0.295", 7.50mm Width)
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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1EDI3021ASXUMA1 1EDI3021ASXUMA1 Infineon Technologies Infineon-1EDI3021AS-DataSheet-v01_00-EN.pdf?fileId=5546d4627956d53f0179895c864a0c54 Description: DGT ISO 5.7KV 1CH GT DVR DSO20
Qualification: AEC-Q100
Voltage - Output Supply: 3V ~ 5.5V
Number of Channels: 1
Grade: Automotive
Pulse Width Distortion (Max): 20ns
Propagation Delay tpLH / tpHL (Max): 120ns, 120ns
Common Mode Transient Immunity (Min): 150kV/µs
Rise / Fall Time (Typ): 55ns, 45ns (Max)
Supplier Device Package: PG-DSO-20-91
Approval Agency: UL, VDE
Voltage - Isolation: 5700Vrms
Current - Output High, Low: 20A, 20A
Technology: Magnetic Coupling
Current - Peak Output: 12A
Operating Temperature: -40°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: 20-BFSOP (0.295", 7.50mm Width)
Packaging: Cut Tape (CT)
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3+8.43 EUR
10+6.4 EUR
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100+5.33 EUR
250+5.07 EUR
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1EDI3020ASXUMA1 1EDI3020ASXUMA1 Infineon Technologies Infineon-1EDI3020AS-DataSheet-v01_00-EN.pdf?fileId=5546d4627956d53f0179895c7f990c51 Description: DGT ISO 5.7KV 1CH GT DVR DSO20
Voltage - Output Supply: 3V ~ 5.5V
Number of Channels: 1
Part Status: Active
Pulse Width Distortion (Max): 20ns
Propagation Delay tpLH / tpHL (Max): 120ns, 120ns
Common Mode Transient Immunity (Min): 150kV/µs
Rise / Fall Time (Typ): 55ns, 45ns (Max)
Supplier Device Package: PG-DSO-20-91
Approval Agency: UL, VDE
Voltage - Isolation: 5700Vrms
Current - Output High, Low: 12A, 12A
Technology: Magnetic Coupling
Current - Peak Output: 12A
Operating Temperature: -40°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: 20-BFSOP (0.295", 7.50mm Width)
Packaging: Tape & Reel (TR)
Qualification: AEC-Q100
Grade: Automotive
Produkt ist nicht verfügbar
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1EDI3020ASXUMA1 1EDI3020ASXUMA1 Infineon Technologies Infineon-1EDI3020AS-DataSheet-v01_00-EN.pdf?fileId=5546d4627956d53f0179895c7f990c51 Description: DGT ISO 5.7KV 1CH GT DVR DSO20
Voltage - Output Supply: 3V ~ 5.5V
Number of Channels: 1
Part Status: Active
Pulse Width Distortion (Max): 20ns
Propagation Delay tpLH / tpHL (Max): 120ns, 120ns
Common Mode Transient Immunity (Min): 150kV/µs
Rise / Fall Time (Typ): 55ns, 45ns (Max)
Supplier Device Package: PG-DSO-20-91
Approval Agency: UL, VDE
Voltage - Isolation: 5700Vrms
Current - Output High, Low: 12A, 12A
Technology: Magnetic Coupling
Current - Peak Output: 12A
Operating Temperature: -40°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: 20-BFSOP (0.295", 7.50mm Width)
Packaging: Cut Tape (CT)
Qualification: AEC-Q100
Grade: Automotive
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100+6.16 EUR
250+5.85 EUR
500+5.68 EUR
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IPAN60R650CEXKSA1 IPAN60R650CEXKSA1 Infineon Technologies Infineon-IPAN60R650CE-DS-v02_00-EN.pdf?fileId=5546d46254e133b40154e712b822183d Description: MOSFET N-CH 600V 9.9A TO220
Input Capacitance (Ciss) (Max) @ Vds: 440 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 20.5 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PG-TO220-FP
Vgs(th) (Max) @ Id: 3.5V @ 200µA
Power Dissipation (Max): 28W (Tc)
Rds On (Max) @ Id, Vgs: 650mOhm @ 2.4A, 10V
Current - Continuous Drain (Id) @ 25°C: 9.9A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Bulk
auf Bestellung 691 Stücke:
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SAK-XC2264-56F66LAC SAK-XC2264-56F66LAC Infineon Technologies INFNS12472-1.pdf?t.download=true&u=5oefqw Description: 16 BIT C166 MICROXC2200 FAMILY (
DigiKey Programmable: Not Verified
Number of I/O: 75
Supplier Device Package: PG-LQFP-100-3
Peripherals: DMA, I²S, POR, PWM, WDT
Connectivity: CANbus, EBI/EMI, I²C, LINbus, SPI, SSC, UART/USART, USI
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Core Size: 16/32-Bit
Data Converters: A/D 8x8/10b
Core Processor: C166SV2
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 125°C (TA)
RAM Size: 34K x 8
Program Memory Size: 448KB (448K x 8)
Speed: 66MHz
Mounting Type: Surface Mount
Package / Case: 100-LQFP Exposed Pad
Packaging: Bulk
Produkt ist nicht verfügbar
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IPL65R095CFD7AUMA1 IPL65R095CFD7AUMA1 Infineon Technologies Infineon-IPL65R095CFD7-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c7c9758f2017ca6ba6ac52236 Description: COOLMOS CFD7 SUPERJUNCTION MOSFE
Input Capacitance (Ciss) (Max) @ Vds: 2513 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PG-VSON-4
Vgs(th) (Max) @ Id: 4.5V @ 630µA
Power Dissipation (Max): 171W (Tc)
Rds On (Max) @ Id, Vgs: 95mOhm @ 12.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 29A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 4-PowerTSFN
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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IPL65R095CFD7AUMA1 IPL65R095CFD7AUMA1 Infineon Technologies Infineon-IPL65R095CFD7-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c7c9758f2017ca6ba6ac52236 Description: COOLMOS CFD7 SUPERJUNCTION MOSFE
Input Capacitance (Ciss) (Max) @ Vds: 2513 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PG-VSON-4
Vgs(th) (Max) @ Id: 4.5V @ 630µA
Power Dissipation (Max): 171W (Tc)
Rds On (Max) @ Id, Vgs: 95mOhm @ 12.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 29A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 4-PowerTSFN
Packaging: Cut Tape (CT)
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TLE7469GV53AUMA1 TLE7469GV53AUMA1 Infineon Technologies Infineon-TLE7469-DS-v01_60-EN.pdf?fileId=5546d46259d9a4bf0159f9e958903f04 Description: IC REG LINEAR 3.3V/5V DSO-12
Qualification: AEC-Q100
Grade: Automotive
Protection Features: Over Current, Over Temperature, Short Circuit
Voltage Dropout (Max): -, 0.6V @ 215mA
PSRR: 60dB (100Hz), 60dB (100Hz)
Part Status: Active
Control Features: Inhibit, Reset, Watchdog
Voltage - Output (Min/Fixed): 3.3V, 5V
Supplier Device Package: PG-DSO-12-11
Number of Regulators: 2
Voltage - Input (Max): 45V
Current - Quiescent (Iq): 55 µA
Output Configuration: Positive
Operating Temperature: -40°C ~ 150°C
Current - Output: 200mA, 215mA
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: 12-BSOP (0.295", 7.50mm Width) Exposed Pad
Packaging: Cut Tape (CT)
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3+8.13 EUR
10+6.16 EUR
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100+5.14 EUR
250+4.88 EUR
500+4.72 EUR
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T1080N04TOFXPSA1 T1080N04TOFXPSA1 Infineon Technologies Infineon-T1080N-DS-v03_01-en_de.pdf?fileId=db3a3043284aacd8012863528c2a5301 Description: SCR MODULE 600V 2000A DO-200AB
Current - Non Rep. Surge 50, 60Hz (Itsm): 16000A @ 50Hz
Current - Gate Trigger (Igt) (Max): 200 mA
Current - Hold (Ih) (Max): 200 mA
Structure: Single
Operating Temperature: -40°C ~ 140°C
Mounting Type: Clamp On
Package / Case: DO-200AA, A-PUK
Packaging: Tray
Voltage - Off State: 600 V
Current - On State (It (RMS)) (Max): 2000 A
Part Status: Obsolete
Voltage - Gate Trigger (Vgt) (Max): 2 V
Current - On State (It (AV)) (Max): 1078 A
Number of SCRs, Diodes: 1 SCR
Produkt ist nicht verfügbar
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IRF6898MTRPBF IRF6898MTRPBF Infineon Technologies IRSDS13491-1.pdf?t.download=true&u=5oefqw Description: IRF6898 - 12V-300V N-CHANNEL POW
Input Capacitance (Ciss) (Max) @ Vds: 5630 pF @ 13 V
Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 4.5 V
Drain to Source Voltage (Vdss): 25 V
Vgs (Max): ±16V
Supplier Device Package: DirectFET™ Isometric MX
Vgs(th) (Max) @ Id: 2.1V @ 100µA
Power Dissipation (Max): 2.8W (Ta), 78W (Tc)
FET Feature: Schottky Diode (Body)
Rds On (Max) @ Id, Vgs: 1.1mOhm @ 40A, 10V
Current - Continuous Drain (Id) @ 25°C: 40A (Ta), 214A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: DirectFET™ Isometric MX
Packaging: Bulk
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IFX80471SKV50 IFX80471SKV50 Infineon Technologies INFNS15572-1.pdf?t.download=true&u=5oefqw Description: IFX80471 - SWITCHING REGULATORS
Packaging: Bulk
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Output Type: Transistor Driver
Mounting Type: Surface Mount
Function: Step-Down
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Frequency - Switching: 360kHz
Topology: Buck
Voltage - Supply (Vcc/Vdd): 5V ~ 60V
Supplier Device Package: PG-DSO-14
Synchronous Rectifier: Yes
Control Features: Enable, Reset
Output Phases: 1
Duty Cycle (Max): 100%
Clock Sync: Yes
Part Status: Active
Number of Outputs: 1
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IFX80471SKV Infineon Technologies INFNS15572-1.pdf?t.download=true&u=5oefqw Description: IFX80471 - SWITCHING REGULATORS
Packaging: Bulk
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Output Type: Transistor Driver
Mounting Type: Surface Mount
Function: Step-Down
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Frequency - Switching: 360kHz
Topology: Buck
Voltage - Supply (Vcc/Vdd): 5V ~ 60V
Supplier Device Package: PG-DSO-14
Synchronous Rectifier: Yes
Control Features: Enable, Reset
Output Phases: 1
Duty Cycle (Max): 100%
Clock Sync: Yes
Part Status: Active
Number of Outputs: 1
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IFX80471SKVXUMA1 IFX80471SKVXUMA1 Infineon Technologies IFX80471.pdf Description: IC REG CTRLR BUCK 14DSO
Packaging: Bulk
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Output Type: Transistor Driver
Mounting Type: Surface Mount
Function: Step-Down
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Frequency - Switching: 360kHz
Topology: Buck
Voltage - Supply (Vcc/Vdd): 5V ~ 60V
Supplier Device Package: PG-DSO-14-1
Synchronous Rectifier: Yes
Control Features: Enable, Reset
Output Phases: 1
Duty Cycle (Max): 100%
Clock Sync: Yes
Part Status: Obsolete
Number of Outputs: 1
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ISZ0803NLSATMA1 ISZ0803NLSATMA1 Infineon Technologies Infineon-ISZ0803NLS-DataSheet-v02_01-EN.pdf?fileId=5546d46278d64ffd0178fd2bd1bf6d7d Description: MOSFET N-CH 100V 7.7A/37A TSDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.7A (Ta), 37A (Tc)
Rds On (Max) @ Id, Vgs: 16.9mOhm @ 20A, 10V
Power Dissipation (Max): 2.1W (Ta), 43W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 18µA
Supplier Device Package: PG-TSDSON-8-26
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 50 V
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ISZ0803NLSATMA1 ISZ0803NLSATMA1 Infineon Technologies Infineon-ISZ0803NLS-DataSheet-v02_01-EN.pdf?fileId=5546d46278d64ffd0178fd2bd1bf6d7d Description: MOSFET N-CH 100V 7.7A/37A TSDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.7A (Ta), 37A (Tc)
Rds On (Max) @ Id, Vgs: 16.9mOhm @ 20A, 10V
Power Dissipation (Max): 2.1W (Ta), 43W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 18µA
Supplier Device Package: PG-TSDSON-8-26
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 50 V
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11+1.96 EUR
100+1.31 EUR
500+1.04 EUR
1000+0.95 EUR
2000+0.87 EUR
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ISC0803NLSATMA1 Infineon Technologies Infineon-ISC0803NLS-DataSheet-v02_01-EN.pdf?fileId=5546d46278d64ffd0178fd62c8076d93 Description: TRENCH >=100V PG-TDSON-8
Produkt ist nicht verfügbar
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ISC0803NLSATMA1 Infineon Technologies Infineon-ISC0803NLS-DataSheet-v02_01-EN.pdf?fileId=5546d46278d64ffd0178fd62c8076d93 Description: TRENCH >=100V PG-TDSON-8
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IPW50R399CPFKSA1 IPW50R399CPFKSA1 Infineon Technologies IPW50R399CP_rev2.1.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a304412b407950112b42d487e4847 Description: MOSFET N-CH 560V 9A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 399mOhm @ 4.9A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 330µA
Supplier Device Package: PG-TO247-3-1
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 560 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 890 pF @ 100 V
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IPD220N06L3GATMA1 IPD220N06L3GATMA1 Infineon Technologies Infineon-IPD220N06L3-DS-v02_00-en.pdf?fileId=db3a30431ddc9372011e266fb35e471a Description: MOSFET N-CH 60V 30A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 22mOhm @ 30A, 10V
Power Dissipation (Max): 36W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 11µA
Supplier Device Package: PG-TO252-3-311
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 30 V
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IPD088N06N3GATMA1 IPD088N06N3GATMA1 Infineon Technologies Infineon-IPD088N06N3-DS-v02_00-en.pdf?fileId=db3a30431ddc9372011e2b2351db4d5c Description: MOSFET N-CH 60V 50A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 8.8mOhm @ 50A, 10V
Power Dissipation (Max): 71W (Tc)
Vgs(th) (Max) @ Id: 4V @ 34µA
Supplier Device Package: PG-TO252-3-311
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3900 pF @ 30 V
Produkt ist nicht verfügbar
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IPD048N06L3GATMA1 IPD048N06L3GATMA1 Infineon Technologies Infineon-IPD048N06L3-DS-v02_00-en.pdf?fileId=db3a30431ddc9372011e2b4f496e4db0 Description: MOSFET N-CH 60V 90A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 4.8mOhm @ 90A, 10V
Power Dissipation (Max): 115W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 58µA
Supplier Device Package: PG-TO252-3-311
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 8400 pF @ 30 V
auf Bestellung 7500 Stücke:
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IRF7524D1TRPBF IRF7524D1TRPBF Infineon Technologies IRF7524D1PbF.pdf Description: MOSFET P-CH 20V 1.7A MICRO8
Packaging: Cut Tape (CT)
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1.7A (Ta)
Rds On (Max) @ Id, Vgs: 270mOhm @ 1.2A, 4.5V
FET Feature: Schottky Diode (Isolated)
Power Dissipation (Max): 1.25W (Ta)
Vgs(th) (Max) @ Id: 700mV @ 250µA (Min)
Supplier Device Package: Micro8™
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 2.7V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 8.2 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 240 pF @ 15 V
Produkt ist nicht verfügbar
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IAUS300N08S5N012TATMA1 IAUS300N08S5N012TATMA1 Infineon Technologies Infineon-IAUS300N08S5N012T-DataSheet-v01_00-EN.pdf?fileId=5546d4627617cd8301762e0474f661bb Description: MOSFET N-CH 80V 300A HDSOP-16-2
Packaging: Tape & Reel (TR)
Package / Case: 16-PowerSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 300A (Tj)
Rds On (Max) @ Id, Vgs: 1.2mOhm @ 100A, 10V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 275µA
Supplier Device Package: PG-HDSOP-16-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 231 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 16250 pF @ 40 V
Grade: Automotive
Qualification: AEC-Q101
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TLT125D0EJXUMA1 TLT125D0EJXUMA1 Infineon Technologies Infineon-TLT125D0EJ-DataSheet-v01_02-EN.pdf?fileId=5546d46279a6fbb20179ba9230257381 Description: IC REG LINEAR POS ADJ 8DSO-52
Voltage - Output (Min/Fixed): 2V
Voltage - Output (Max): 14V
Supplier Device Package: PG-DSO-8-52
Number of Regulators: 1
Voltage - Input (Max): 40V
Current - Quiescent (Iq): 110 µA
Output Configuration: Positive
Operating Temperature: -40°C ~ 160°C (TJ)
Current - Output: 250mA
Mounting Type: Surface Mount
Output Type: Adjustable
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Packaging: Tape & Reel (TR)
Grade: Automotive
Qualification: AEC-Q100
Current - Supply (Max): 25 mA
Protection Features: Over Temperature, Over Voltage, Reverse Polarity, Under Voltage Lockout (UVLO)
Voltage Dropout (Max): 0.5V @ 250mA
PSRR: 80dB (100Hz)
Part Status: Active
Control Features: Enable, Power Good, Soft Start
Produkt ist nicht verfügbar
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TLT125D0EJXUMA1 TLT125D0EJXUMA1 Infineon Technologies Infineon-TLT125D0EJ-DataSheet-v01_02-EN.pdf?fileId=5546d46279a6fbb20179ba9230257381 Description: IC REG LINEAR POS ADJ 8DSO-52
Qualification: AEC-Q100
Grade: Automotive
Current - Supply (Max): 25 mA
Protection Features: Over Temperature, Over Voltage, Reverse Polarity, Under Voltage Lockout (UVLO)
Voltage Dropout (Max): 0.5V @ 250mA
PSRR: 80dB (100Hz)
Part Status: Active
Control Features: Enable, Power Good, Soft Start
Voltage - Output (Min/Fixed): 2V
Voltage - Output (Max): 14V
Supplier Device Package: PG-DSO-8-52
Number of Regulators: 1
Voltage - Input (Max): 40V
Current - Quiescent (Iq): 110 µA
Output Configuration: Positive
Operating Temperature: -40°C ~ 160°C (TJ)
Current - Output: 250mA
Mounting Type: Surface Mount
Output Type: Adjustable
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Packaging: Cut Tape (CT)
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TLE9879QTW40XUMA1 TLE9879QTW40XUMA1 Infineon Technologies Infineon-TLE9879QTW40-DataSheet-v01_00-EN.pdf?fileId=5546d46274dd77260174e8c76525349f Description: IC MCU 32BIT 128KB FLASH 48TQFP
Package / Case: 48-TQFP Exposed Pad
Packaging: Tape & Reel (TR)
Number of I/O: 10
Part Status: Active
Supplier Device Package: 48-TQFP (7x7)
Peripherals: Brown-out Detect/Reset, DMA, POR, PWM, WDT
Connectivity: LINbus, SPI, SSC, UART/USART
Voltage - Supply (Vcc/Vdd): 5.5V ~ 27V
Core Size: 32-Bit Single-Core
Data Converters: A/D 5x10b Sigma-Delta
Core Processor: ARM® Cortex®-M3
EEPROM Size: 4K x 8
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 175°C (TJ)
RAM Size: 6K x 8
Program Memory Size: 128KB (128K x 8)
Speed: 40MHz
Mounting Type: Surface Mount
DigiKey Programmable: Not Verified
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TLE9879QTW40XUMA1 TLE9879QTW40XUMA1 Infineon Technologies Infineon-TLE9879QTW40-DataSheet-v01_00-EN.pdf?fileId=5546d46274dd77260174e8c76525349f Description: IC MCU 32BIT 128KB FLASH 48TQFP
Number of I/O: 10
Part Status: Active
Supplier Device Package: 48-TQFP (7x7)
Peripherals: Brown-out Detect/Reset, DMA, POR, PWM, WDT
Connectivity: LINbus, SPI, SSC, UART/USART
Voltage - Supply (Vcc/Vdd): 5.5V ~ 27V
Core Size: 32-Bit Single-Core
Data Converters: A/D 5x10b Sigma-Delta
Core Processor: ARM® Cortex®-M3
EEPROM Size: 4K x 8
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 175°C (TJ)
RAM Size: 6K x 8
Program Memory Size: 128KB (128K x 8)
Speed: 40MHz
Mounting Type: Surface Mount
Package / Case: 48-TQFP Exposed Pad
Packaging: Cut Tape (CT)
DigiKey Programmable: Not Verified
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1000+9.72 EUR
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FS300R17OE4B81BPSA1 FS300R17OE4B81BPSA1 Infineon Technologies Infineon-FS300R17OE4_B81-DataSheet-v03_00-EN.pdf?fileId=5546d4627255dbad01726029d02d6c72 Description: MEDIUM POWER ECONO
Input Capacitance (Cies) @ Vce: 24.3 nF @ 25 V
Current - Collector Cutoff (Max): 3 mA
Power - Max: 20 mW
Voltage - Collector Emitter Breakdown (Max): 1700 V
Current - Collector (Ic) (Max): 300 A
Part Status: Active
Supplier Device Package: AG-ECONOPP
NTC Thermistor: Yes
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 300A
Operating Temperature: -40°C ~ 150°C (TJ)
Configuration: Three Phase Inverter
Input: Standard
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Tray
IGBT Type: Trench Field Stop
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FS450R12OE4B81BPSA1 FS450R12OE4B81BPSA1 Infineon Technologies Infineon-FS450R12OE4_B81-DataSheet-v03_00-EN.pdf?fileId=5546d4627255dbad0172602a28a36c7b Description: MEDIUM POWER ECONO
Configuration: Three Phase Inverter
Input: Standard
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Tray
Input Capacitance (Cies) @ Vce: 27.9 nF @ 25 V
Current - Collector Cutoff (Max): 3 mA
Power - Max: 20 mW
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 450 A
Part Status: Active
IGBT Type: Trench Field Stop
Supplier Device Package: AG-ECONOPP
NTC Thermistor: Yes
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 450A
Operating Temperature: -40°C ~ 150°C (TJ)
Produkt ist nicht verfügbar
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FF2MR12KM1HOSA1 Infineon Technologies Description: MOSFET 2N-CH 1200V 500A AG-62MM
Part Status: Obsolete
Supplier Device Package: AG-62MM
Vgs(th) (Max) @ Id: 5.15V @ 224mA
Gate Charge (Qg) (Max) @ Vgs: 1340nC @ 15V
Rds On (Max) @ Id, Vgs: 2.13mOhm @ 500A, 15V
Input Capacitance (Ciss) (Max) @ Vds: 39700pF @ 800V
Current - Continuous Drain (Id) @ 25°C: 500A (Tc)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Technology: Silicon Carbide (SiC)
Operating Temperature: -40°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Half Bridge)
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Tray
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IDK05G120C5XTMA1 IDK05G120C5XTMA1 Infineon Technologies Infineon-IDK05G120C5-DataSheet-v02_01-EN.pdf?fileId=5546d4626df6ee62016e3bf0cac20f3b Description: DIODE SIC 1.2KV 19.1A TO263-1
Current - Reverse Leakage @ Vr: 33 µA @ 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 5 A
Voltage - DC Reverse (Vr) (Max): 1200 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: PG-TO263-2-1
Current - Average Rectified (Io): 19.1A
Capacitance @ Vr, F: 301pF @ 1V, 1MHz
Technology: SiC (Silicon Carbide) Schottky
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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IDK05G120C5XTMA1 IDK05G120C5XTMA1 Infineon Technologies Infineon-IDK05G120C5-DataSheet-v02_01-EN.pdf?fileId=5546d4626df6ee62016e3bf0cac20f3b Description: DIODE SIC 1.2KV 19.1A TO263-1
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 33 µA @ 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 5 A
Voltage - DC Reverse (Vr) (Max): 1200 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: PG-TO263-2-1
Current - Average Rectified (Io): 19.1A
Capacitance @ Vr, F: 301pF @ 1V, 1MHz
Technology: SiC (Silicon Carbide) Schottky
Speed: No Recovery Time > 500mA (Io)
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CHL8326-20CRT CHL8326-20CRT Infineon Technologies IR3536,38_CHL8326,28_v1.09_6-21-13.pdf Description: IC REG BUCK 48VQFN
Packaging: Tape & Reel (TR)
Package / Case: 48-VFQFN Exposed Pad
Output Type: PWM
Mounting Type: Surface Mount
Function: Step-Down
Operating Temperature: -20°C ~ 85°C (TA)
Output Configuration: Positive
Frequency - Switching: 200kHz ~ 1.2MHz
Topology: Buck
Voltage - Supply (Vcc/Vdd): 3.3V
Supplier Device Package: PG-VQFN-48-901
Synchronous Rectifier: No
Control Features: Enable, Power Good
Serial Interfaces: I²C, PMBus, SMBus
Output Phases: 6
Clock Sync: No
Part Status: Obsolete
Number of Outputs: 6
Produkt ist nicht verfügbar
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IPTG014N10NM5ATMA1 Infineon-IPTG014N10NM5-DataSheet-v02_00-EN.pdf?fileId=5546d46277921c320177aa3f74d57d58
IPTG014N10NM5ATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 100V 37A/366A HSOG-8
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSMD, Gull Wing
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 37A (Ta), 366A (Tc)
Rds On (Max) @ Id, Vgs: 1.4mOhm @ 150A, 10V
Power Dissipation (Max): 3.8W (Ta), 375W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 280µA
Supplier Device Package: PG-HSOG-8-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 211 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 16000 pF @ 50 V
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IPTG014N10NM5ATMA1 Infineon-IPTG014N10NM5-DataSheet-v02_00-EN.pdf?fileId=5546d46277921c320177aa3f74d57d58
IPTG014N10NM5ATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 100V 37A/366A HSOG-8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSMD, Gull Wing
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 37A (Ta), 366A (Tc)
Rds On (Max) @ Id, Vgs: 1.4mOhm @ 150A, 10V
Power Dissipation (Max): 3.8W (Ta), 375W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 280µA
Supplier Device Package: PG-HSOG-8-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 211 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 16000 pF @ 50 V
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BSM50GD120DLCBPSA1
Hersteller: Infineon Technologies
Description: IGBT MODULE 1200V 85A AG-ECONO2A
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Full Bridge Inverter
Operating Temperature: 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 50A
NTC Thermistor: No
Supplier Device Package: AG-ECONO2A
Part Status: Last Time Buy
Current - Collector (Ic) (Max): 85 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 350 W
Current - Collector Cutoff (Max): 84 µA
Input Capacitance (Cies) @ Vce: 3.3 nF @ 25 V
Produkt ist nicht verfügbar
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BSM50GD120DN2BPSA1
Hersteller: Infineon Technologies
Description: IGBT MODULE 1200V 72A AG-ECONO2A
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Full Bridge
Operating Temperature: 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 50A
NTC Thermistor: No
Supplier Device Package: AG-ECONO2A
Part Status: Last Time Buy
Current - Collector (Ic) (Max): 72 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 350 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 3.3 nF @ 25 V
Produkt ist nicht verfügbar
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MB90F882PMC-GSE1 5047
MB90F882PMC-GSE1
Hersteller: Infineon Technologies
Description: IC MCU 16BIT 256KB FLASH 100LQFP
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Speed: 33MHz
Program Memory Size: 256KB (256K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
Core Processor: F²MC-16LX
Data Converters: A/D 20x8/10b
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 2.7V ~ 3.6V
Connectivity: I2C, Serial I/O, UART/USART
Peripherals: DMA, POR, PWM, WDT
Supplier Device Package: 100-LQFP (14x14)
Number of I/O: 83
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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S26KS512SDPBHN020 Infineon-512-MB_(64_MB)_256-MB_(32_MB)_128-MB_(16_MB)_1.8_V_3.0_V_HYPERFLASH_FAMILY-DataSheet-v14_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed5ca77559f&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integ
S26KS512SDPBHN020
Hersteller: Infineon Technologies
Description: IC FLASH 512MBIT HYPERBUS 24FBGA
Packaging: Tray
Package / Case: 24-VBGA
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.7V ~ 1.95V
Technology: FLASH - NOR
Clock Frequency: 166 MHz
Memory Format: FLASH
Supplier Device Package: 24-FBGA (6x8)
Part Status: Active
Memory Interface: HyperBus
Access Time: 96 ns
Memory Organization: 64M x 8
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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S26KS512SDABHI030 Infineon-512-MB_(64_MB)_256-MB_(32_MB)_128-MB_(16_MB)_1.8_V_3.0_V_HYPERFLASH_FAMILY-DataSheet-v15_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed5ca77559f
S26KS512SDABHI030
Hersteller: Infineon Technologies
Description: IC FLASH 512MBIT HYPERBUS 24FBGA
Packaging: Tray
Package / Case: 24-VBGA
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 1.95V
Technology: FLASH - NOR
Clock Frequency: 100 MHz
Memory Format: FLASH
Supplier Device Package: 24-FBGA (6x8)
Memory Interface: HyperBus
Access Time: 96 ns
Memory Organization: 64M x 8
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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S26KS512SDPBHB020 Infineon-512-MB_(64_MB)_256-MB_(32_MB)_128-MB_(16_MB)_1.8_V_3.0_V_HYPERFLASH_FAMILY-DataSheet-v15_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed5ca77559f
S26KS512SDPBHB020
Hersteller: Infineon Technologies
Description: IC FLASH 512MBIT HYPERBUS 24FBGA
Qualification: AEC-Q100
Grade: Automotive
Memory Organization: 64M x 8
Access Time: 96 ns
Memory Interface: HyperBus
Part Status: Active
Supplier Device Package: 24-FBGA (6x8)
Memory Format: FLASH
Clock Frequency: 166 MHz
Technology: FLASH - NOR
Voltage - Supply: 1.7V ~ 1.95V
Operating Temperature: -40°C ~ 105°C (TA)
Memory Type: Non-Volatile
Memory Size: 512Mbit
Mounting Type: Surface Mount
Package / Case: 24-VBGA
Packaging: Tray
DigiKey Programmable: Not Verified
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1+24.11 EUR
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25+21.67 EUR
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100+20.61 EUR
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ETD580N16P60HPSA1 Infineon-eTT580N16P60-DS-v03_06-EN.pdf?fileId=5546d46265487f7b01658027a49f34b0
ETD580N16P60HPSA1
Hersteller: Infineon Technologies
Description: SCR MODULE 1.6KV 700A MODULE
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2+370.4 EUR
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ETD580N16P60HPSA1 Infineon-eTT580N16P60-DS-v03_06-EN.pdf?fileId=5546d46265487f7b01658027a49f34b0
ETD580N16P60HPSA1
Hersteller: Infineon Technologies
Description: SCR MODULE 1.6KV 700A MODULE
Produkt ist nicht verfügbar
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ETT510N16P60HPSA1 Infineon-eTT510N16P60-DS-v03_05-EN.pdf?fileId=5546d46265487f7b01658027aea734b3
ETT510N16P60HPSA1
Hersteller: Infineon Technologies
Description: SCR MODULE 1.6KV 700A MODULE
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 135°C (TC)
Structure: Series Connection - All SCRs
Current - Hold (Ih) (Max): 300 mA
Current - Gate Trigger (Igt) (Max): 250 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 15300A @ 50Hz
Number of SCRs, Diodes: 2 SCRs
Current - On State (It (AV)) (Max): 515 A
Voltage - Gate Trigger (Vgt) (Max): 2 V
Part Status: Obsolete
Current - On State (It (RMS)) (Max): 700 A
Voltage - Off State: 1.6 kV
auf Bestellung 3 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2+378.37 EUR
Mindestbestellmenge: 2 Stücke
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ETD630N16P60HPSA1 Infineon-DS_eTT630N16P60-DS-v03_01-EN.pdf?fileId=5546d46265f064ff01668579447e6418
ETD630N16P60HPSA1
Hersteller: Infineon Technologies
Description: SCR MODULE 1.6KV 700A MODULE
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 135°C (TC)
Structure: Series Connection - SCR/Diode
Current - Hold (Ih) (Max): 300 mA
Current - Gate Trigger (Igt) (Max): 250 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 19800A @ 50Hz
Number of SCRs, Diodes: 1 SCR, 1 Diode
Current - On State (It (AV)) (Max): 635 A
Voltage - Gate Trigger (Vgt) (Max): 2 V
Current - On State (It (RMS)) (Max): 700 A
Voltage - Off State: 1.6 kV
auf Bestellung 2 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2+483.02 EUR
Mindestbestellmenge: 2 Stücke
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ETD630N16P60HPSA1 Infineon-DS_eTT630N16P60-DS-v03_01-EN.pdf?fileId=5546d46265f064ff01668579447e6418
ETD630N16P60HPSA1
Hersteller: Infineon Technologies
Description: SCR MODULE 1.6KV 700A MODULE
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 135°C (TC)
Structure: Series Connection - SCR/Diode
Current - Hold (Ih) (Max): 300 mA
Current - Gate Trigger (Igt) (Max): 250 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 19800A @ 50Hz
Number of SCRs, Diodes: 1 SCR, 1 Diode
Current - On State (It (AV)) (Max): 635 A
Voltage - Gate Trigger (Vgt) (Max): 2 V
Current - On State (It (RMS)) (Max): 700 A
Voltage - Off State: 1.6 kV
Produkt ist nicht verfügbar
Mindestbestellmenge: 2 Stücke
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ETT580N16P60HPSA1 Infineon-eTT580N16P60-DS-v03_06-EN.pdf?fileId=5546d46265487f7b01658027a49f34b0
ETT580N16P60HPSA1
Hersteller: Infineon Technologies
Description: SCR MODULE 1.6KV 700A MODULE
Voltage - Off State: 1.6 kV
Current - On State (It (RMS)) (Max): 700 A
Voltage - Gate Trigger (Vgt) (Max): 2 V
Current - On State (It (AV)) (Max): 586 A
Number of SCRs, Diodes: 2 SCRs
Current - Non Rep. Surge 50, 60Hz (Itsm): 16500A @ 50Hz
Current - Gate Trigger (Igt) (Max): 250 mA
Current - Hold (Ih) (Max): 300 mA
Structure: Series Connection - All SCRs
Operating Temperature: -40°C ~ 135°C (TC)
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Tray
auf Bestellung 2 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1+410.19 EUR
Im Einkaufswagen  Stück im Wert von  UAH
ETT630N16P60HPSA1 Infineon-DS_eTT630N16P60-DS-v03_01-EN.pdf?fileId=5546d46265f064ff01668579447e6418
ETT630N16P60HPSA1
Hersteller: Infineon Technologies
Description: SCR MODULE 1.6KV 700A MODULE
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 135°C (TC)
Structure: Series Connection - All SCRs
Current - Hold (Ih) (Max): 300 mA
Current - Gate Trigger (Igt) (Max): 250 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 19800A @ 50Hz
Number of SCRs, Diodes: 2 SCRs
Current - On State (It (AV)) (Max): 635 A
Voltage - Gate Trigger (Vgt) (Max): 2 V
Part Status: Active
Current - On State (It (RMS)) (Max): 700 A
Voltage - Off State: 1.6 kV
auf Bestellung 2 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1+435.47 EUR
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ETD510N16P60HPSA1 Infineon-eTT510N16P60-DS-v03_05-EN.pdf?fileId=5546d46265487f7b01658027aea734b3
ETD510N16P60HPSA1
Hersteller: Infineon Technologies
Description: SCR MODULE 1.6KV 700A MODULE
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 135°C (TC)
Structure: Series Connection - SCR/Diode
Current - Hold (Ih) (Max): 300 mA
Current - Gate Trigger (Igt) (Max): 250 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 15300A @ 50Hz
Number of SCRs, Diodes: 1 SCR, 1 Diode
Current - On State (It (AV)) (Max): 515 A
Voltage - Gate Trigger (Vgt) (Max): 2 V
Part Status: Obsolete
Current - On State (It (RMS)) (Max): 700 A
Voltage - Off State: 1.6 kV
auf Bestellung 12 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2+362.82 EUR
Mindestbestellmenge: 2 Stücke
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IPB65R190CFD7AATMA1 Infineon-IPB65R190CFD7A-DataSheet-v02_00-EN.pdf?fileId=5546d4627506bb3201751c530f6542c3
IPB65R190CFD7AATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 650V 14A TO263-3
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 6.4A, 10V
Power Dissipation (Max): 77W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 320µA
Supplier Device Package: PG-TO263-3
Part Status: Active
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1291 pF @ 400 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
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IPB65R190CFD7AATMA1 Infineon-IPB65R190CFD7A-DataSheet-v02_00-EN.pdf?fileId=5546d4627506bb3201751c530f6542c3
IPB65R190CFD7AATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 650V 14A TO263-3
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 6.4A, 10V
Power Dissipation (Max): 77W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 320µA
Supplier Device Package: PG-TO263-3
Part Status: Active
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1291 pF @ 400 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 915 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3+8.38 EUR
10+5.52 EUR
100+3.89 EUR
500+3.32 EUR
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IPWS65R035CFD7AXKSA1 Infineon-IPWS65R035CFD7A-DataSheet-v02_00-EN.pdf?fileId=5546d46272e49d2a01730e4a600f28f9
IPWS65R035CFD7AXKSA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 650V 63A TO247-3-41
Qualification: AEC-Q101
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PG-TO247-3-41
Vgs(th) (Max) @ Id: 4.5V @ 1.79mA
Power Dissipation (Max): 305W (Tc)
Rds On (Max) @ Id, Vgs: 35mOhm @ 35.8A, 10V
Current - Continuous Drain (Id) @ 25°C: 63A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 7149 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 145 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±20V
Produkt ist nicht verfügbar
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IKZ50N65ES5XKSA1 Infineon-IKZ50N65ES5-DS-v02_01-EN.pdf?fileId=5546d4625bd71aa0015bd8175c56052a
IKZ50N65ES5XKSA1
Hersteller: Infineon Technologies
Description: IGBT TRENCH 650V 80A TO247-4
Packaging: Bulk
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 62 ns
Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 50A
Supplier Device Package: PG-TO247-4
IGBT Type: Trench
Td (on/off) @ 25°C: 36ns/294ns
Switching Energy: 770µJ (on), 880µJ (off)
Test Condition: 400V, 25A, 23.1Ohm, 15V
Gate Charge: 120 nC
Part Status: Active
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 200 A
Power - Max: 274 W
auf Bestellung 240 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
96+5.75 EUR
Mindestbestellmenge: 96 Stücke
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FP50R12W2T7BPSA1 Infineon-FP50R12W2T7-DataSheet-v02_00-EN.pdf?fileId=5546d46273a5366f017426941cbf65f1
FP50R12W2T7BPSA1
Hersteller: Infineon Technologies
Description: IGBT MODULE 1200V 50A AG-EASY2B
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Three Phase Bridge Rectifier
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 175°C (TJ)
NTC Thermistor: Yes
Supplier Device Package: AG-EASY2B
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 50 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 8 µA
Input Capacitance (Cies) @ Vce: 11.1 nF @ 25 V
auf Bestellung 43 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1+97.33 EUR
15+70.71 EUR
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FP50R12W2T7PB11BPSA1
Hersteller: Infineon Technologies
Description: LOW POWER EASY AG-EASY2B-2
Input Capacitance (Cies) @ Vce: 11.1 nF @ 25 V
Current - Collector Cutoff (Max): 8 µA
Power - Max: 20 mW
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 50 A
Part Status: Active
IGBT Type: Trench Field Stop
Supplier Device Package: AG-EASY2B
NTC Thermistor: Yes
Operating Temperature: -40°C ~ 175°C (TJ)
Configuration: Three Phase Inverter
Input: Three Phase Bridge Rectifier
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Tray
Produkt ist nicht verfügbar
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F415MR12W2M1B76BOMA1
Hersteller: Infineon Technologies
Description: LOW POWER EASY AG-EASY2B-2
auf Bestellung 6 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1+604.28 EUR
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PXP1600CPQG003XUMA1
Hersteller: Infineon Technologies
Description: IC CONTROLLER
Produkt ist nicht verfügbar
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1EDI3031ASXUMA1 Infineon-1EDI3031AS-DataSheet-v01_00-EN.pdf?fileId=5546d4627956d53f01798965edc10c5d
1EDI3031ASXUMA1
Hersteller: Infineon Technologies
Description: DGT ISO 5.7KV 1CH GT DVR DSO20
Qualification: AEC-Q100
Voltage - Output Supply: 3V ~ 5.5V
Number of Channels: 1
Grade: Automotive
Pulse Width Distortion (Max): 20ns
Propagation Delay tpLH / tpHL (Max): 120ns, 120ns
Common Mode Transient Immunity (Min): 150kV/µs
Rise / Fall Time (Typ): 55ns, 45ns (Max)
Supplier Device Package: PG-DSO-20-91
Approval Agency: UL, VDE
Voltage - Isolation: 5700Vrms
Current - Output High, Low: 20A, 20A
Technology: Magnetic Coupling
Current - Peak Output: 12A
Operating Temperature: -40°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: 20-BFSOP (0.295", 7.50mm Width)
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
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1EDI3031ASXUMA1 Infineon-1EDI3031AS-DataSheet-v01_00-EN.pdf?fileId=5546d4627956d53f01798965edc10c5d
1EDI3031ASXUMA1
Hersteller: Infineon Technologies
Description: DGT ISO 5.7KV 1CH GT DVR DSO20
Qualification: AEC-Q100
Voltage - Output Supply: 3V ~ 5.5V
Number of Channels: 1
Grade: Automotive
Pulse Width Distortion (Max): 20ns
Propagation Delay tpLH / tpHL (Max): 120ns, 120ns
Common Mode Transient Immunity (Min): 150kV/µs
Rise / Fall Time (Typ): 55ns, 45ns (Max)
Supplier Device Package: PG-DSO-20-91
Approval Agency: UL, VDE
Voltage - Isolation: 5700Vrms
Current - Output High, Low: 20A, 20A
Technology: Magnetic Coupling
Current - Peak Output: 12A
Operating Temperature: -40°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: 20-BFSOP (0.295", 7.50mm Width)
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
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1EDI3021ASXUMA1 Infineon-1EDI3021AS-DataSheet-v01_00-EN.pdf?fileId=5546d4627956d53f0179895c864a0c54
1EDI3021ASXUMA1
Hersteller: Infineon Technologies
Description: DGT ISO 5.7KV 1CH GT DVR DSO20
Qualification: AEC-Q100
Voltage - Output Supply: 3V ~ 5.5V
Number of Channels: 1
Grade: Automotive
Pulse Width Distortion (Max): 20ns
Propagation Delay tpLH / tpHL (Max): 120ns, 120ns
Common Mode Transient Immunity (Min): 150kV/µs
Rise / Fall Time (Typ): 55ns, 45ns (Max)
Supplier Device Package: PG-DSO-20-91
Approval Agency: UL, VDE
Voltage - Isolation: 5700Vrms
Current - Output High, Low: 20A, 20A
Technology: Magnetic Coupling
Current - Peak Output: 12A
Operating Temperature: -40°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: 20-BFSOP (0.295", 7.50mm Width)
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
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1EDI3021ASXUMA1 Infineon-1EDI3021AS-DataSheet-v01_00-EN.pdf?fileId=5546d4627956d53f0179895c864a0c54
1EDI3021ASXUMA1
Hersteller: Infineon Technologies
Description: DGT ISO 5.7KV 1CH GT DVR DSO20
Qualification: AEC-Q100
Voltage - Output Supply: 3V ~ 5.5V
Number of Channels: 1
Grade: Automotive
Pulse Width Distortion (Max): 20ns
Propagation Delay tpLH / tpHL (Max): 120ns, 120ns
Common Mode Transient Immunity (Min): 150kV/µs
Rise / Fall Time (Typ): 55ns, 45ns (Max)
Supplier Device Package: PG-DSO-20-91
Approval Agency: UL, VDE
Voltage - Isolation: 5700Vrms
Current - Output High, Low: 20A, 20A
Technology: Magnetic Coupling
Current - Peak Output: 12A
Operating Temperature: -40°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: 20-BFSOP (0.295", 7.50mm Width)
Packaging: Cut Tape (CT)
auf Bestellung 1021 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3+8.43 EUR
10+6.4 EUR
25+5.89 EUR
100+5.33 EUR
250+5.07 EUR
500+4.91 EUR
Mindestbestellmenge: 3 Stücke
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1EDI3020ASXUMA1 Infineon-1EDI3020AS-DataSheet-v01_00-EN.pdf?fileId=5546d4627956d53f0179895c7f990c51
1EDI3020ASXUMA1
Hersteller: Infineon Technologies
Description: DGT ISO 5.7KV 1CH GT DVR DSO20
Voltage - Output Supply: 3V ~ 5.5V
Number of Channels: 1
Part Status: Active
Pulse Width Distortion (Max): 20ns
Propagation Delay tpLH / tpHL (Max): 120ns, 120ns
Common Mode Transient Immunity (Min): 150kV/µs
Rise / Fall Time (Typ): 55ns, 45ns (Max)
Supplier Device Package: PG-DSO-20-91
Approval Agency: UL, VDE
Voltage - Isolation: 5700Vrms
Current - Output High, Low: 12A, 12A
Technology: Magnetic Coupling
Current - Peak Output: 12A
Operating Temperature: -40°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: 20-BFSOP (0.295", 7.50mm Width)
Packaging: Tape & Reel (TR)
Qualification: AEC-Q100
Grade: Automotive
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
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1EDI3020ASXUMA1 Infineon-1EDI3020AS-DataSheet-v01_00-EN.pdf?fileId=5546d4627956d53f0179895c7f990c51
1EDI3020ASXUMA1
Hersteller: Infineon Technologies
Description: DGT ISO 5.7KV 1CH GT DVR DSO20
Voltage - Output Supply: 3V ~ 5.5V
Number of Channels: 1
Part Status: Active
Pulse Width Distortion (Max): 20ns
Propagation Delay tpLH / tpHL (Max): 120ns, 120ns
Common Mode Transient Immunity (Min): 150kV/µs
Rise / Fall Time (Typ): 55ns, 45ns (Max)
Supplier Device Package: PG-DSO-20-91
Approval Agency: UL, VDE
Voltage - Isolation: 5700Vrms
Current - Output High, Low: 12A, 12A
Technology: Magnetic Coupling
Current - Peak Output: 12A
Operating Temperature: -40°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: 20-BFSOP (0.295", 7.50mm Width)
Packaging: Cut Tape (CT)
Qualification: AEC-Q100
Grade: Automotive
auf Bestellung 990 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3+9.67 EUR
10+7.37 EUR
25+6.79 EUR
100+6.16 EUR
250+5.85 EUR
500+5.68 EUR
Mindestbestellmenge: 3 Stücke
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IPAN60R650CEXKSA1 Infineon-IPAN60R650CE-DS-v02_00-EN.pdf?fileId=5546d46254e133b40154e712b822183d
IPAN60R650CEXKSA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 600V 9.9A TO220
Input Capacitance (Ciss) (Max) @ Vds: 440 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 20.5 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PG-TO220-FP
Vgs(th) (Max) @ Id: 3.5V @ 200µA
Power Dissipation (Max): 28W (Tc)
Rds On (Max) @ Id, Vgs: 650mOhm @ 2.4A, 10V
Current - Continuous Drain (Id) @ 25°C: 9.9A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Bulk
auf Bestellung 691 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
487+1.14 EUR
Mindestbestellmenge: 487 Stücke
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SAK-XC2264-56F66LAC INFNS12472-1.pdf?t.download=true&u=5oefqw
SAK-XC2264-56F66LAC
Hersteller: Infineon Technologies
Description: 16 BIT C166 MICROXC2200 FAMILY (
DigiKey Programmable: Not Verified
Number of I/O: 75
Supplier Device Package: PG-LQFP-100-3
Peripherals: DMA, I²S, POR, PWM, WDT
Connectivity: CANbus, EBI/EMI, I²C, LINbus, SPI, SSC, UART/USART, USI
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Core Size: 16/32-Bit
Data Converters: A/D 8x8/10b
Core Processor: C166SV2
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 125°C (TA)
RAM Size: 34K x 8
Program Memory Size: 448KB (448K x 8)
Speed: 66MHz
Mounting Type: Surface Mount
Package / Case: 100-LQFP Exposed Pad
Packaging: Bulk
Produkt ist nicht verfügbar
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IPL65R095CFD7AUMA1 Infineon-IPL65R095CFD7-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c7c9758f2017ca6ba6ac52236
IPL65R095CFD7AUMA1
Hersteller: Infineon Technologies
Description: COOLMOS CFD7 SUPERJUNCTION MOSFE
Input Capacitance (Ciss) (Max) @ Vds: 2513 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PG-VSON-4
Vgs(th) (Max) @ Id: 4.5V @ 630µA
Power Dissipation (Max): 171W (Tc)
Rds On (Max) @ Id, Vgs: 95mOhm @ 12.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 29A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 4-PowerTSFN
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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IPL65R095CFD7AUMA1 Infineon-IPL65R095CFD7-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c7c9758f2017ca6ba6ac52236
IPL65R095CFD7AUMA1
Hersteller: Infineon Technologies
Description: COOLMOS CFD7 SUPERJUNCTION MOSFE
Input Capacitance (Ciss) (Max) @ Vds: 2513 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PG-VSON-4
Vgs(th) (Max) @ Id: 4.5V @ 630µA
Power Dissipation (Max): 171W (Tc)
Rds On (Max) @ Id, Vgs: 95mOhm @ 12.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 29A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 4-PowerTSFN
Packaging: Cut Tape (CT)
auf Bestellung 70 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2+12.26 EUR
10+8.21 EUR
Mindestbestellmenge: 2 Stücke
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TLE7469GV53AUMA1 Infineon-TLE7469-DS-v01_60-EN.pdf?fileId=5546d46259d9a4bf0159f9e958903f04
TLE7469GV53AUMA1
Hersteller: Infineon Technologies
Description: IC REG LINEAR 3.3V/5V DSO-12
Qualification: AEC-Q100
Grade: Automotive
Protection Features: Over Current, Over Temperature, Short Circuit
Voltage Dropout (Max): -, 0.6V @ 215mA
PSRR: 60dB (100Hz), 60dB (100Hz)
Part Status: Active
Control Features: Inhibit, Reset, Watchdog
Voltage - Output (Min/Fixed): 3.3V, 5V
Supplier Device Package: PG-DSO-12-11
Number of Regulators: 2
Voltage - Input (Max): 45V
Current - Quiescent (Iq): 55 µA
Output Configuration: Positive
Operating Temperature: -40°C ~ 150°C
Current - Output: 200mA, 215mA
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: 12-BSOP (0.295", 7.50mm Width) Exposed Pad
Packaging: Cut Tape (CT)
auf Bestellung 5988 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3+8.13 EUR
10+6.16 EUR
25+5.68 EUR
100+5.14 EUR
250+4.88 EUR
500+4.72 EUR
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T1080N04TOFXPSA1 Infineon-T1080N-DS-v03_01-en_de.pdf?fileId=db3a3043284aacd8012863528c2a5301
T1080N04TOFXPSA1
Hersteller: Infineon Technologies
Description: SCR MODULE 600V 2000A DO-200AB
Current - Non Rep. Surge 50, 60Hz (Itsm): 16000A @ 50Hz
Current - Gate Trigger (Igt) (Max): 200 mA
Current - Hold (Ih) (Max): 200 mA
Structure: Single
Operating Temperature: -40°C ~ 140°C
Mounting Type: Clamp On
Package / Case: DO-200AA, A-PUK
Packaging: Tray
Voltage - Off State: 600 V
Current - On State (It (RMS)) (Max): 2000 A
Part Status: Obsolete
Voltage - Gate Trigger (Vgt) (Max): 2 V
Current - On State (It (AV)) (Max): 1078 A
Number of SCRs, Diodes: 1 SCR
Produkt ist nicht verfügbar
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IRF6898MTRPBF IRSDS13491-1.pdf?t.download=true&u=5oefqw
IRF6898MTRPBF
Hersteller: Infineon Technologies
Description: IRF6898 - 12V-300V N-CHANNEL POW
Input Capacitance (Ciss) (Max) @ Vds: 5630 pF @ 13 V
Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 4.5 V
Drain to Source Voltage (Vdss): 25 V
Vgs (Max): ±16V
Supplier Device Package: DirectFET™ Isometric MX
Vgs(th) (Max) @ Id: 2.1V @ 100µA
Power Dissipation (Max): 2.8W (Ta), 78W (Tc)
FET Feature: Schottky Diode (Body)
Rds On (Max) @ Id, Vgs: 1.1mOhm @ 40A, 10V
Current - Continuous Drain (Id) @ 25°C: 40A (Ta), 214A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: DirectFET™ Isometric MX
Packaging: Bulk
Produkt ist nicht verfügbar
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IFX80471SKV50 INFNS15572-1.pdf?t.download=true&u=5oefqw
IFX80471SKV50
Hersteller: Infineon Technologies
Description: IFX80471 - SWITCHING REGULATORS
Packaging: Bulk
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Output Type: Transistor Driver
Mounting Type: Surface Mount
Function: Step-Down
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Frequency - Switching: 360kHz
Topology: Buck
Voltage - Supply (Vcc/Vdd): 5V ~ 60V
Supplier Device Package: PG-DSO-14
Synchronous Rectifier: Yes
Control Features: Enable, Reset
Output Phases: 1
Duty Cycle (Max): 100%
Clock Sync: Yes
Part Status: Active
Number of Outputs: 1
auf Bestellung 7257 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
290+1.99 EUR
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IFX80471SKV INFNS15572-1.pdf?t.download=true&u=5oefqw
Hersteller: Infineon Technologies
Description: IFX80471 - SWITCHING REGULATORS
Packaging: Bulk
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Output Type: Transistor Driver
Mounting Type: Surface Mount
Function: Step-Down
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Frequency - Switching: 360kHz
Topology: Buck
Voltage - Supply (Vcc/Vdd): 5V ~ 60V
Supplier Device Package: PG-DSO-14
Synchronous Rectifier: Yes
Control Features: Enable, Reset
Output Phases: 1
Duty Cycle (Max): 100%
Clock Sync: Yes
Part Status: Active
Number of Outputs: 1
Produkt ist nicht verfügbar
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IFX80471SKVXUMA1 IFX80471.pdf
IFX80471SKVXUMA1
Hersteller: Infineon Technologies
Description: IC REG CTRLR BUCK 14DSO
Packaging: Bulk
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Output Type: Transistor Driver
Mounting Type: Surface Mount
Function: Step-Down
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Frequency - Switching: 360kHz
Topology: Buck
Voltage - Supply (Vcc/Vdd): 5V ~ 60V
Supplier Device Package: PG-DSO-14-1
Synchronous Rectifier: Yes
Control Features: Enable, Reset
Output Phases: 1
Duty Cycle (Max): 100%
Clock Sync: Yes
Part Status: Obsolete
Number of Outputs: 1
auf Bestellung 8665 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
198+2.73 EUR
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ISZ0803NLSATMA1 Infineon-ISZ0803NLS-DataSheet-v02_01-EN.pdf?fileId=5546d46278d64ffd0178fd2bd1bf6d7d
ISZ0803NLSATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 100V 7.7A/37A TSDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.7A (Ta), 37A (Tc)
Rds On (Max) @ Id, Vgs: 16.9mOhm @ 20A, 10V
Power Dissipation (Max): 2.1W (Ta), 43W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 18µA
Supplier Device Package: PG-TSDSON-8-26
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 50 V
Produkt ist nicht verfügbar
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ISZ0803NLSATMA1 Infineon-ISZ0803NLS-DataSheet-v02_01-EN.pdf?fileId=5546d46278d64ffd0178fd2bd1bf6d7d
ISZ0803NLSATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 100V 7.7A/37A TSDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.7A (Ta), 37A (Tc)
Rds On (Max) @ Id, Vgs: 16.9mOhm @ 20A, 10V
Power Dissipation (Max): 2.1W (Ta), 43W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 18µA
Supplier Device Package: PG-TSDSON-8-26
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 50 V
auf Bestellung 4800 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
7+3.09 EUR
11+1.96 EUR
100+1.31 EUR
500+1.04 EUR
1000+0.95 EUR
2000+0.87 EUR
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ISC0803NLSATMA1 Infineon-ISC0803NLS-DataSheet-v02_01-EN.pdf?fileId=5546d46278d64ffd0178fd62c8076d93
Hersteller: Infineon Technologies
Description: TRENCH >=100V PG-TDSON-8
Produkt ist nicht verfügbar
Mindestbestellmenge: 5000 Stücke
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ISC0803NLSATMA1 Infineon-ISC0803NLS-DataSheet-v02_01-EN.pdf?fileId=5546d46278d64ffd0178fd62c8076d93
Hersteller: Infineon Technologies
Description: TRENCH >=100V PG-TDSON-8
Produkt ist nicht verfügbar
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IPW50R399CPFKSA1 IPW50R399CP_rev2.1.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a304412b407950112b42d487e4847
IPW50R399CPFKSA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 560V 9A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 399mOhm @ 4.9A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 330µA
Supplier Device Package: PG-TO247-3-1
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 560 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 890 pF @ 100 V
auf Bestellung 5520 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
251+2.32 EUR
Mindestbestellmenge: 251 Stücke
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IPD220N06L3GATMA1 Infineon-IPD220N06L3-DS-v02_00-en.pdf?fileId=db3a30431ddc9372011e266fb35e471a
IPD220N06L3GATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 60V 30A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 22mOhm @ 30A, 10V
Power Dissipation (Max): 36W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 11µA
Supplier Device Package: PG-TO252-3-311
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 30 V
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2500+0.67 EUR
Mindestbestellmenge: 2500 Stücke
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IPD088N06N3GATMA1 Infineon-IPD088N06N3-DS-v02_00-en.pdf?fileId=db3a30431ddc9372011e2b2351db4d5c
IPD088N06N3GATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 60V 50A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 8.8mOhm @ 50A, 10V
Power Dissipation (Max): 71W (Tc)
Vgs(th) (Max) @ Id: 4V @ 34µA
Supplier Device Package: PG-TO252-3-311
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3900 pF @ 30 V
Produkt ist nicht verfügbar
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IPD048N06L3GATMA1 Infineon-IPD048N06L3-DS-v02_00-en.pdf?fileId=db3a30431ddc9372011e2b4f496e4db0
IPD048N06L3GATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 60V 90A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 4.8mOhm @ 90A, 10V
Power Dissipation (Max): 115W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 58µA
Supplier Device Package: PG-TO252-3-311
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 8400 pF @ 30 V
auf Bestellung 7500 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2500+1.31 EUR
7500+1.18 EUR
Mindestbestellmenge: 2500 Stücke
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IRF7524D1TRPBF IRF7524D1PbF.pdf
IRF7524D1TRPBF
Hersteller: Infineon Technologies
Description: MOSFET P-CH 20V 1.7A MICRO8
Packaging: Cut Tape (CT)
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1.7A (Ta)
Rds On (Max) @ Id, Vgs: 270mOhm @ 1.2A, 4.5V
FET Feature: Schottky Diode (Isolated)
Power Dissipation (Max): 1.25W (Ta)
Vgs(th) (Max) @ Id: 700mV @ 250µA (Min)
Supplier Device Package: Micro8™
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 2.7V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 8.2 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 240 pF @ 15 V
Produkt ist nicht verfügbar
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IAUS300N08S5N012TATMA1 Infineon-IAUS300N08S5N012T-DataSheet-v01_00-EN.pdf?fileId=5546d4627617cd8301762e0474f661bb
IAUS300N08S5N012TATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 80V 300A HDSOP-16-2
Packaging: Tape & Reel (TR)
Package / Case: 16-PowerSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 300A (Tj)
Rds On (Max) @ Id, Vgs: 1.2mOhm @ 100A, 10V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 275µA
Supplier Device Package: PG-HDSOP-16-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 231 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 16250 pF @ 40 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 3600 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1800+4.99 EUR
Mindestbestellmenge: 1800 Stücke
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TLT125D0EJXUMA1 Infineon-TLT125D0EJ-DataSheet-v01_02-EN.pdf?fileId=5546d46279a6fbb20179ba9230257381
TLT125D0EJXUMA1
Hersteller: Infineon Technologies
Description: IC REG LINEAR POS ADJ 8DSO-52
Voltage - Output (Min/Fixed): 2V
Voltage - Output (Max): 14V
Supplier Device Package: PG-DSO-8-52
Number of Regulators: 1
Voltage - Input (Max): 40V
Current - Quiescent (Iq): 110 µA
Output Configuration: Positive
Operating Temperature: -40°C ~ 160°C (TJ)
Current - Output: 250mA
Mounting Type: Surface Mount
Output Type: Adjustable
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Packaging: Tape & Reel (TR)
Grade: Automotive
Qualification: AEC-Q100
Current - Supply (Max): 25 mA
Protection Features: Over Temperature, Over Voltage, Reverse Polarity, Under Voltage Lockout (UVLO)
Voltage Dropout (Max): 0.5V @ 250mA
PSRR: 80dB (100Hz)
Part Status: Active
Control Features: Enable, Power Good, Soft Start
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
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TLT125D0EJXUMA1 Infineon-TLT125D0EJ-DataSheet-v01_02-EN.pdf?fileId=5546d46279a6fbb20179ba9230257381
TLT125D0EJXUMA1
Hersteller: Infineon Technologies
Description: IC REG LINEAR POS ADJ 8DSO-52
Qualification: AEC-Q100
Grade: Automotive
Current - Supply (Max): 25 mA
Protection Features: Over Temperature, Over Voltage, Reverse Polarity, Under Voltage Lockout (UVLO)
Voltage Dropout (Max): 0.5V @ 250mA
PSRR: 80dB (100Hz)
Part Status: Active
Control Features: Enable, Power Good, Soft Start
Voltage - Output (Min/Fixed): 2V
Voltage - Output (Max): 14V
Supplier Device Package: PG-DSO-8-52
Number of Regulators: 1
Voltage - Input (Max): 40V
Current - Quiescent (Iq): 110 µA
Output Configuration: Positive
Operating Temperature: -40°C ~ 160°C (TJ)
Current - Output: 250mA
Mounting Type: Surface Mount
Output Type: Adjustable
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Packaging: Cut Tape (CT)
auf Bestellung 1087 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
6+3.71 EUR
10+2.74 EUR
25+2.49 EUR
100+2.23 EUR
250+2.09 EUR
500+2.02 EUR
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TLE9879QTW40XUMA1 Infineon-TLE9879QTW40-DataSheet-v01_00-EN.pdf?fileId=5546d46274dd77260174e8c76525349f
TLE9879QTW40XUMA1
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 128KB FLASH 48TQFP
Package / Case: 48-TQFP Exposed Pad
Packaging: Tape & Reel (TR)
Number of I/O: 10
Part Status: Active
Supplier Device Package: 48-TQFP (7x7)
Peripherals: Brown-out Detect/Reset, DMA, POR, PWM, WDT
Connectivity: LINbus, SPI, SSC, UART/USART
Voltage - Supply (Vcc/Vdd): 5.5V ~ 27V
Core Size: 32-Bit Single-Core
Data Converters: A/D 5x10b Sigma-Delta
Core Processor: ARM® Cortex®-M3
EEPROM Size: 4K x 8
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 175°C (TJ)
RAM Size: 6K x 8
Program Memory Size: 128KB (128K x 8)
Speed: 40MHz
Mounting Type: Surface Mount
DigiKey Programmable: Not Verified
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2500+9.37 EUR
Mindestbestellmenge: 2500 Stücke
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TLE9879QTW40XUMA1 Infineon-TLE9879QTW40-DataSheet-v01_00-EN.pdf?fileId=5546d46274dd77260174e8c76525349f
TLE9879QTW40XUMA1
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 128KB FLASH 48TQFP
Number of I/O: 10
Part Status: Active
Supplier Device Package: 48-TQFP (7x7)
Peripherals: Brown-out Detect/Reset, DMA, POR, PWM, WDT
Connectivity: LINbus, SPI, SSC, UART/USART
Voltage - Supply (Vcc/Vdd): 5.5V ~ 27V
Core Size: 32-Bit Single-Core
Data Converters: A/D 5x10b Sigma-Delta
Core Processor: ARM® Cortex®-M3
EEPROM Size: 4K x 8
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 175°C (TJ)
RAM Size: 6K x 8
Program Memory Size: 128KB (128K x 8)
Speed: 40MHz
Mounting Type: Surface Mount
Package / Case: 48-TQFP Exposed Pad
Packaging: Cut Tape (CT)
DigiKey Programmable: Not Verified
auf Bestellung 7433 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2+17.15 EUR
10+15.48 EUR
25+14.76 EUR
100+12.82 EUR
250+12.25 EUR
500+11.16 EUR
1000+9.72 EUR
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FS300R17OE4B81BPSA1 Infineon-FS300R17OE4_B81-DataSheet-v03_00-EN.pdf?fileId=5546d4627255dbad01726029d02d6c72
FS300R17OE4B81BPSA1
Hersteller: Infineon Technologies
Description: MEDIUM POWER ECONO
Input Capacitance (Cies) @ Vce: 24.3 nF @ 25 V
Current - Collector Cutoff (Max): 3 mA
Power - Max: 20 mW
Voltage - Collector Emitter Breakdown (Max): 1700 V
Current - Collector (Ic) (Max): 300 A
Part Status: Active
Supplier Device Package: AG-ECONOPP
NTC Thermistor: Yes
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 300A
Operating Temperature: -40°C ~ 150°C (TJ)
Configuration: Three Phase Inverter
Input: Standard
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Tray
IGBT Type: Trench Field Stop
Produkt ist nicht verfügbar
Mindestbestellmenge: 4 Stücke
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FS450R12OE4B81BPSA1 Infineon-FS450R12OE4_B81-DataSheet-v03_00-EN.pdf?fileId=5546d4627255dbad0172602a28a36c7b
FS450R12OE4B81BPSA1
Hersteller: Infineon Technologies
Description: MEDIUM POWER ECONO
Configuration: Three Phase Inverter
Input: Standard
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Tray
Input Capacitance (Cies) @ Vce: 27.9 nF @ 25 V
Current - Collector Cutoff (Max): 3 mA
Power - Max: 20 mW
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 450 A
Part Status: Active
IGBT Type: Trench Field Stop
Supplier Device Package: AG-ECONOPP
NTC Thermistor: Yes
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 450A
Operating Temperature: -40°C ~ 150°C (TJ)
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FF2MR12KM1HOSA1
Hersteller: Infineon Technologies
Description: MOSFET 2N-CH 1200V 500A AG-62MM
Part Status: Obsolete
Supplier Device Package: AG-62MM
Vgs(th) (Max) @ Id: 5.15V @ 224mA
Gate Charge (Qg) (Max) @ Vgs: 1340nC @ 15V
Rds On (Max) @ Id, Vgs: 2.13mOhm @ 500A, 15V
Input Capacitance (Ciss) (Max) @ Vds: 39700pF @ 800V
Current - Continuous Drain (Id) @ 25°C: 500A (Tc)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Technology: Silicon Carbide (SiC)
Operating Temperature: -40°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Half Bridge)
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Tray
auf Bestellung 6 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1+1600.95 EUR
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IDK05G120C5XTMA1 Infineon-IDK05G120C5-DataSheet-v02_01-EN.pdf?fileId=5546d4626df6ee62016e3bf0cac20f3b
IDK05G120C5XTMA1
Hersteller: Infineon Technologies
Description: DIODE SIC 1.2KV 19.1A TO263-1
Current - Reverse Leakage @ Vr: 33 µA @ 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 5 A
Voltage - DC Reverse (Vr) (Max): 1200 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: PG-TO263-2-1
Current - Average Rectified (Io): 19.1A
Capacitance @ Vr, F: 301pF @ 1V, 1MHz
Technology: SiC (Silicon Carbide) Schottky
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
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IDK05G120C5XTMA1 Infineon-IDK05G120C5-DataSheet-v02_01-EN.pdf?fileId=5546d4626df6ee62016e3bf0cac20f3b
IDK05G120C5XTMA1
Hersteller: Infineon Technologies
Description: DIODE SIC 1.2KV 19.1A TO263-1
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 33 µA @ 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 5 A
Voltage - DC Reverse (Vr) (Max): 1200 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: PG-TO263-2-1
Current - Average Rectified (Io): 19.1A
Capacitance @ Vr, F: 301pF @ 1V, 1MHz
Technology: SiC (Silicon Carbide) Schottky
Speed: No Recovery Time > 500mA (Io)
auf Bestellung 955 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3+8.15 EUR
10+5.37 EUR
100+3.77 EUR
500+3.09 EUR
Mindestbestellmenge: 3 Stücke
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CHL8326-20CRT IR3536,38_CHL8326,28_v1.09_6-21-13.pdf
CHL8326-20CRT
Hersteller: Infineon Technologies
Description: IC REG BUCK 48VQFN
Packaging: Tape & Reel (TR)
Package / Case: 48-VFQFN Exposed Pad
Output Type: PWM
Mounting Type: Surface Mount
Function: Step-Down
Operating Temperature: -20°C ~ 85°C (TA)
Output Configuration: Positive
Frequency - Switching: 200kHz ~ 1.2MHz
Topology: Buck
Voltage - Supply (Vcc/Vdd): 3.3V
Supplier Device Package: PG-VQFN-48-901
Synchronous Rectifier: No
Control Features: Enable, Power Good
Serial Interfaces: I²C, PMBus, SMBus
Output Phases: 6
Clock Sync: No
Part Status: Obsolete
Number of Outputs: 6
Produkt ist nicht verfügbar
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